Degradation measurement of bronzes, a recent application of the TLA techniques in the field of cultural heritage

International Nuclear Information System (INIS)

Danesi, P.R.; Laguzzi, G.; Luvidi, L

2001-01-01

The thin layer technique is normally applied in wear and corrosion monitoring of mechanical and plant components. A recent applications refers to the field of Cultural Heritage. In particular thought national and international research programmes TLA is used as a sensitivity toll in determining the properties towards corrosion of new bronze alloys to be used for artistic purposes, as in manufacturing of outdoor artworks. One activated and exposed to natural or artificial corrosive environments the bronze surface is treated with pick ling solutions to remove the corrosion products, The corresponding thickness loss is determined by the relevant γ-activity loss. The method sensitivity allows of the thickness loss evaluation in the order micrometers of lower. Besides comparative analyses of the behaviour of different bronze alloys, this method is also applied in determining the effectiveness of corrosion inhibitor or protective films, normally used on outdoor bronze sculptures. The metal activation is carried out by using a cyclotron accelerated proton beam (11.5 MeV) which products on the bronze surface and along a defined depth γemitting radionuclide 65 Zn (t 1/2 = 244 days). In the present paper, bronze corrosion results obtained in different environmental conditions as outdoor exposures and artificial weathering experiments are reported

75 FR 14257 - Pricing for Bronze Medals

Science.gov (United States)

2010-03-24

... DEPARTMENT OF THE TREASURY United States Mint Pricing for Bronze Medals AGENCY: United States Mint, Department of the Treasury. ACTION: Notice. SUMMARY: The United States Mint is announcing the price of the 1\\5/16\\- inch bronze medals, 1\\1/2\\-inch bronze medals and three-inch bronze medals. Beginning March...

Standard formation enthalpies of Nasub(2+x)Vsub(6)Osub(16-y) bronze of kappa type

International Nuclear Information System (INIS)

Khodos, M.Ya.; Slobodin, B.V.; Surat, L.L.; Fotiev, A.A.

1980-01-01

Standard formation enthalpies of sodium oxide vanadium bronze of kappa Nasub(2+x)Vsub(6)Osub(16-y) type of different composition have been determined by the method of solution calorimetry. It has been ascertained that within the limits of homogeneity a standard formation enthalpy decreases insignificantly with the increase of bronze oxygen defectiveness and is a linear function of sodium content

Oxidation of ruthenium thin films using atomic oxygen

Energy Technology Data Exchange (ETDEWEB)

McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

2015-12-31

In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

Unidirectional oxide hetero-interface thin-film diode

International Nuclear Information System (INIS)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

2015-01-01

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

Unidirectional oxide hetero-interface thin-film diode

Energy Technology Data Exchange (ETDEWEB)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

X-ray Photoelectron Spectroscopy as a tool to investigate silane-based coatings for the protection of outdoor bronze: The role of alloying elements

Science.gov (United States)

Masi, G.; Balbo, A.; Esvan, J.; Monticelli, C.; Avila, J.; Robbiola, L.; Bernardi, E.; Bignozzi, M. C.; Asensio, M. C.; Martini, C.; Chiavari, C.

2018-03-01

Application of a protective coating is the most widely used conservation treatment for outdoor bronzes (cast Cu-Sn-Zn-Pb-Sb alloys). However, improving coating protectiveness requires detailed knowledge of the coating/substrate chemical bonding. This is particularly the case for 3-mercapto-propyl-trimethoxy-silane (PropS-SH) applied on bronze, exhibiting a good protective behaviour in outdoor simulated conditions. The present work deals with X-Ray Photoelectron Spectroscopy (XPS) and Electron Microscopy (FEG-SEM + FIB (Focused Ion Beam)) characterization of a thin PropS-SH film on bronze. In particular, in order to better understand the influence of alloying elements on coating performance, PropS-SH was studied first on pure Cu and Sn substrates then on bronzes with increasing alloy additions: Cu8Sn as well as a quinary Cu-Sn-Zn-Pb-Sb bronze. Moreover, considering the real application of this coating on historical bronze substrates, previously artificially aged ("patinated") bronze samples were prepared and a comparison between bare and "patinated" quinary bronzes was performed. In the case of coated quinary bronze, the free surface of samples was analysed by High Resolution Photoelectron Spectroscopy using Synchrotron Radiation (HR-SRPES) at ANTARES (Synchrotron SOLEIL), which offers a higher energy and lateral resolution. By compiling complementary spectroscopic and imaging information, a deeper insight into the interactions between the protective coating and the bronze substrate was achieved.

Surface characterization of a corroded bronze-leaded alloy in a salt spray cabinet

International Nuclear Information System (INIS)

Cura D'Ars de Figueiredo Junior, Joao; Freitas Cunha Lins, Vanessa de; Bellis, Vito Modesto de

2007-01-01

The corrosion products of a TM 23 bronze-leaded alloy (Cu 72%, Pb 15%, Zn 8% and Sn 5%) were obtained in a salt spray cabinet after exposition during 120 h and 1000 h. The products obtained were studied using scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction. The major products of bronze-leaded corrosion were oxides and basic salts of Cu, CuCl 2 .3Cu(OH) 2 , and Pb, Pb(OH)Cl. The results can be attributed to a kinetic control of the corrosion reactions

Electric and magnetic properties of oxidic titanium bronzes of rare earths Lnsub(2/3+x)TiOsub(3+-y) with perovskite structure

International Nuclear Information System (INIS)

Bazuev, G.V.; Makarova, O.V.; Shvejkin, G.P.

1983-01-01

A study was made on electric and magnetic properties of oxidic titanium bronzes of rare earths and their dependence on rare earth nature and the degree of rare earth sublattice filling was followed. Data on Lnsub(2/3)TiOsub(3-y) (Ln-Ce, Nd) anion-deficient perovskites are given as well. Investigated Cesub(2/3)TiOsub(2.985) and Ndsub(2/3)TiOsub(2.875) phases as well as defectless with respect to oxygen Lnsub(2/3)TiOsub(3) phases have rhombic structure of perovskite type with ordered position of Ln 3 + cations and vacancies. Specific electric resistance and thermoelectromotive force factor were determined in vacuum at 290-1173 K for samples in the form of parallelepiped of 3x5x25 mm 3 size. Magnetic susceptibility chi was determined at 77-300 K by Faraday method using a device based on magnetic balancewith electromagnetic compensation. Relative error during chi measuring didn't exceed +-2%. Collectivized behaviour of d-electrons of Ti 3 + cations in oxidic titanium bronzes of rare earths: Lnsub(2/3+x)TiOsub(3+-y) (Ln-La, Ce, Nd; 0 < x < 1/3), conditioned by formation of narrow, partly filled π*-zone, was established on the basis of measuring specific electric resistance and magnetic susceptibility

Bronze rainbow hologram mirrors

Science.gov (United States)

Dawson, P.

2006-02-01

This project draws on holographic embossing techniques, ancient artistic conventions of bronze mirror design and modelling and casting processes to accomplish portraiture of reflection. Laser scanning, 3D computer graphics and holographic imaging are employed to enable a permanent 3D static holographic image to appear integrated with the real-time moving reflection of a viewer's face in a polished bronze disc. The disc and the figure which holds it (caryatid) are cast in bronze from a lost wax model, a technique which has been used for millennia to make personal mirrors. The Caryatid form of bronze mirror which went through many permutations in ancient Egyptian, Greece and Rome shows a plethora of expressive figure poses ranging from sleek nudes to highly embellished multifigure arrangements. The prototype of this series was made for Australian choreographer Graeme Murphy, Artistic Director of the Sydney Dance Company. Each subsequent mirror will be unique in figure and holographic imagery as arranged between artist and subject. Conceptually this project references both the modern experience of viewing mirrors retrieved from ancient tombs, which due to deterioration of the surface no longer reflect, and the functioning of Chinese Magic mirrors, which have the ability to project a predetermined image. Inspired by the metaphorical potential of these mirrors, which do not reflect the immediate reality of the viewer, this bronze hologram mirror series enables each viewer to reflect upon himself or herself observing simultaneously the holographic image and their own partially obliterated reflection.

Photoinduced hydrophobic surface of graphene oxide thin films

International Nuclear Information System (INIS)

Zhang Xiaoyan; Song Peng; Cui Xiaoli

2012-01-01

Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

Charge-density-wave instabilities expected in monophosphate tungsten bronzes

International Nuclear Information System (INIS)

Canadell, E.; Whangbo, M.

1991-01-01

On the basis of tight-binding band calculations, we examined the electronic structures of the tungsten oxide layers found in the monophosphate tungsten bronze (MPTB) phases. The Fermi surfaces of these MPTB phases consist of five well-nested one- and two-dimensional pieces. We calculated the nesting vectors of these Fermi surfaces and discussed the expected charge-density-wave instabilities

Corrosion investigation of fire-gilded bronze involving high surface resolution spectroscopic imaging

International Nuclear Information System (INIS)

Masi, G.; Chiavari, C.; Avila, J.; Esvan, J.; Raffo, S.; Bignozzi, M.C.; Asensio, M.C.; Robbiola, L.

2016-01-01

Graphical abstract: - Highlights: • Fire-gilded bronze prepared by ancient methods (Au–Hg layer on Cu–Sn–Zn–Pb–Sb). • Heating during gilding induces Sn and Znenrichment in the top part of the gilded layer. • SR-HRPES mapping of corrosion craters (cross-section) after accelerated ageing. • Selective dissolution of Cu and Zn in the craters induces Sn species enrichment. • The main species in the craters are related to hydroxi-oxide compounds. - Abstract: Gilded bronzes are often affected by severe corrosion, due to defects in the Au layer and Au/Cu alloy galvanic coupling, stimulated by large cathodic area of the gilded layer. Galvanic corrosion, triggered by gilding defects, leads to products growth at the Au/bronze interface, inducing blistering or break-up of the Au layer. In this context, fire-gilded bronze replicas prepared by ancient methods (use of spreadable Au–Hg paste) was specifically characterised by compiling complementary spectroscopic and imaging information before/after accelerated ageing with synthetic rain. Fire-gilded bronze samples were chemically imaged in cross-section at nano-metric scale (<200 nm) using high energy and lateral resolution synchrotron radiation photoemission (HR-SRPES) of core levels and valence band after conventional characterisation of the samples by Glow Discharge optical Emission Spectroscopy (GD-OES) and conventional X-ray photoelectron spectroscopy (XPS). We have found a net surface enrichment in Zn and Sn after fire-gilding and presence of metallic Hg, Pb and Cu within the Au layer. Moreover, the composition distribution of the elements together with their oxidation has been determined. It was also revealed that metallic phases including Hg and Pb remain in the gilding after corrosion. Moreover, selective dissolution of Zn and Cu occurs in the crater due to galvanic coupling, which locally induces relative Sn species enrichment (decuprification). The feasibility advantages and disadvantages of

Corrosion investigation of fire-gilded bronze involving high surface resolution spectroscopic imaging

Energy Technology Data Exchange (ETDEWEB)

Masi, G., E-mail: giulia.masi5@unibo.it [Dipartimento di Ingegneria Civile, Chimica, Ambientale e dei Materiali, Università di Bologna, via Terracini 28, 40131 Bologna (Italy); Chiavari, C., E-mail: cristina.chiavari@unibo.it [Dipartimento di Ingegneria Civile, Chimica, Ambientale e dei Materiali, Università di Bologna, via Terracini 28, 40131 Bologna (Italy); C.I.R.I. (Centro Interdipartimentale Ricerca Industriale) Meccanica Avanzata e Materiali, Università di Bologna, Bologna, via Terracini 28, 40131 Bologna (Italy); Avila, J., E-mail: jose.avila@synchrotron-soleil.fr [Synchrotron SOLEIL, L’Orme des Merisiers, 91190 Saint-Aubin (France); Esvan, J., E-mail: jerome.esvan@ensiacet.fr [Centre Interuniversitaire de Recherche et d’Ingénierie des Matériaux, Université de Toulouse, 4 allée Emile Monso, 31030 Toulouse (France); Raffo, S., E-mail: simona.raffo2@unibo.it [Dipartimento di Chimica Industriale “Toso Montanari”, Università di Bologna, viale Risorgimento 4, 40136 Bologna (Italy); Bignozzi, M.C., E-mail: maria.bignozzi@unibo.it [Dipartimento di Ingegneria Civile, Chimica, Ambientale e dei Materiali, Università di Bologna, via Terracini 28, 40131 Bologna (Italy); Asensio, M.C., E-mail: maria-carmen.asensio@synchrotron-soleil.fr [Synchrotron SOLEIL, L’Orme des Merisiers, 91190 Saint-Aubin (France); Robbiola, L., E-mail: robbiola@univ-tlse2.fr [TRACES Lab (CNRS UMR5608), Université Toulouse Jean-Jaurès, 5, allées Antonio-Machado, 31058 Toulouse (France); and others

2016-03-15

Graphical abstract: - Highlights: • Fire-gilded bronze prepared by ancient methods (Au–Hg layer on Cu–Sn–Zn–Pb–Sb). • Heating during gilding induces Sn and Znenrichment in the top part of the gilded layer. • SR-HRPES mapping of corrosion craters (cross-section) after accelerated ageing. • Selective dissolution of Cu and Zn in the craters induces Sn species enrichment. • The main species in the craters are related to hydroxi-oxide compounds. - Abstract: Gilded bronzes are often affected by severe corrosion, due to defects in the Au layer and Au/Cu alloy galvanic coupling, stimulated by large cathodic area of the gilded layer. Galvanic corrosion, triggered by gilding defects, leads to products growth at the Au/bronze interface, inducing blistering or break-up of the Au layer. In this context, fire-gilded bronze replicas prepared by ancient methods (use of spreadable Au–Hg paste) was specifically characterised by compiling complementary spectroscopic and imaging information before/after accelerated ageing with synthetic rain. Fire-gilded bronze samples were chemically imaged in cross-section at nano-metric scale (<200 nm) using high energy and lateral resolution synchrotron radiation photoemission (HR-SRPES) of core levels and valence band after conventional characterisation of the samples by Glow Discharge optical Emission Spectroscopy (GD-OES) and conventional X-ray photoelectron spectroscopy (XPS). We have found a net surface enrichment in Zn and Sn after fire-gilding and presence of metallic Hg, Pb and Cu within the Au layer. Moreover, the composition distribution of the elements together with their oxidation has been determined. It was also revealed that metallic phases including Hg and Pb remain in the gilding after corrosion. Moreover, selective dissolution of Zn and Cu occurs in the crater due to galvanic coupling, which locally induces relative Sn species enrichment (decuprification). The feasibility advantages and disadvantages of

Corrosion characteristics of copper and leaded bronze in palm biodiesel

Energy Technology Data Exchange (ETDEWEB)

Haseeb, A.S.M.A.; Masjuki, H.H.; Ann, L.J.; Fazal, M.A. [Department of Mechanical Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2010-03-15

Biodiesel has become more attractive as alternative fuel for automobiles because of its environmental benefits and the fact that it is made from renewable sources. However, corrosion of metals in biodiesel is one of the concerns related to biodiesel compatibility issues. This study aims to characterize the corrosion behavior of commercial pure copper and leaded bronze commonly encountered in the automotive fuel system in diesel engine. Static immersion tests in B0, B50 and B100 fuels were carried out at room temperature for 2640 h. Similar immersion tests in B0, B100 and B100 (oxidized) fuels were also conducted at 60 C for 840 h. At the end of the test, corrosion behavior was investigated by weight loss measurements and changes in surface morphology. Fuels were analyzed by using TAN analyzer, FTIR, MOA (multi-element oil analyzer) to investigate acid concentration, oxidation level with water content and corrosive impurities respectively. Results showed that under the experimental conditions, pure copper was more susceptible to corrosion in biodiesel as compared to leaded bronze. (author)

Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

2008-07-01

Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

Investigation of vanadium oxide bronzes of phase β by means of annihilation of positrons

International Nuclear Information System (INIS)

Dryzek, E.

1992-01-01

The vanadium bronzes with general composition M x V 2 O 5 (where M means the donor element Li, Na, K, Cu, Na) have been the object of the investigation. The positron annihilation method as well as the broadening of the annihilation line in Doppler spectra have been the basing methods for the study of material structure. The donor lattice vacancies have been investigated as a positron traps being responsible for the shape of annihilation spectra. The model of clustering of donor ions has been constructed. On that base and temperature dependence of the positron annihilation spectra the thermodynamical parameters of donor ion vacancies in vanadium bronzes have been calculated. 112 refs, 33 figs, 11 tabs

Electric and magnetic properties of oxidic titanium bronzes of rare earths Lnsub(2/3+x)TiOsub(3+-y) with perovskite structure

Energy Technology Data Exchange (ETDEWEB)

Bazuev, G V; Makarova, O V; Shvejkin, G P [AN SSSR, Sverdlovsk. Inst. Khimii

1983-01-01

A study was made on electric and magnetic properties of oxidic titanium bronzes of rare earths and their dependence on rare earth nature and the degree of rare earth sublattice filling was followed. Data on Lnsub(2/3)TiOsub(3-y) (Ln-Ce, Nd) anion-deficient perovskites are given as well. Investigated Cesub(2/3)TiOsub(2.985) and Ndsub(2/3)TiOsub(2.875) phases as well as defectless with respect to oxygen Lnsub(2/3)TiOsub(3) phases have rhombic structure of perovskite type with ordered position of Ln/sup 3 +/ cations and vacancies. Specific electric resistance and thermoelectromotive force factor were determined in vacuum at 290-1173 K for samples in the form of parallelepiped of 3x5x25 mm/sup 3/ size. Magnetic susceptibility chi was determined at 77-300 K by Faraday method using a device based on magnetic balance with electromagnetic compensation. Relative error during chi measuring didn't exceed +-2%. Collectivized behaviour of d-electrons of Ti/sup 3 +/ cations in oxidic titanium bronzes of rare earths: Lnsub(2/3+x)TiOsub(3+-y) (Ln-La, Ce, Nd; 0 < x < 1/3), conditioned by formation of narrow, partly filled ..pi..*-zone, was established on the basis of measuring specific electric resistance and magnetic susceptibility.

Population genomics of Bronze Age Eurasia

DEFF Research Database (Denmark)

Allentoft, Morten E.; Sikora, Martin; Sjögren, Karl-Göran

2015-01-01

The Bronze Age of Eurasia (around 3000-1000 BC) was a period of major cultural changes. However, there is debate about whether these changes resulted from the circulation of ideas or from human migrations, potentially also facilitating the spread of languages and certain phenotypic traits. We...... investigated this by using new, improved methods to sequence low-coverage genomes from 101 ancient humans from across Eurasia. We show that the Bronze Age was a highly dynamic period involving large-scale population migrations and replacements, responsible for shaping major parts of present-day demographic...... structure in both Europe and Asia. Our findings are consistent with the hypothesized spread of Indo-European languages during the Early Bronze Age. We also demonstrate that light skin pigmentation in Europeans was already present at high frequency in the Bronze Age, but not lactose tolerance, indicating...

Electrochromic device containing metal oxide nanoparticles and ultraviolet blocking material

Science.gov (United States)

Garcia, Guillermo; Koo, Bonil; Gregoratto, Ivano; Basu, Sourav; Rosen, Evelyn; Holt, Jason; Thomsen, Scott

2017-10-17

An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant. The electrochromic device also includes nanoparticles containing one or more transparent conducting oxide (TCO), a solid state electrolyte, a counter electrode, and at least one protective layer to prevent degradation of the one or more nanostructured transition metal oxide bronze. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) and visible radiation as a function of an applied voltage to the device.

Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

1997-11-21

The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

The Bronze Age Smith as Individual

DEFF Research Database (Denmark)

Nørgaard, Heide Wrobel

During 1550-1100 BC magnificent decorated bronze objects appear in grave and hoard finds in Northwest Europe. While investigating similarities in the decorative elements of bronze objects belonging to the female gender, it is possible to find traces of the production process. These distinctive fe...

Thermochemical investigation of lithium-vanadium bronzes

International Nuclear Information System (INIS)

Filippova, S.E.; Kesler, Ya.A.; Tret'yakov, Yu.D.; Gordeev, I.V.

1979-01-01

A thermochemical investigation was carried out of lithium-vanadium bronzes. The enthalpies of solution and the standard enthalpies of formation of the bronzes β-Lisub(x)Vsub(2)Osub(5) were determined. Investigated was the dependence of the enthalpy of mixing bronzes on the composition; a linear character of the dependence evidences of negligibly small, as compared to the experimental error, energy variations of the matrix V 2 O 5 on introduction of lithium. The variation was calculated of the partial molar enthalpy of lithium in the formation of β-Lisub(x)Vsub(2)Osub(5)

Granulation of Cu-Al-Fe-Ni Bronze

Directory of Open Access Journals (Sweden)

Pisarek B.P.

2014-08-01

Full Text Available With the increase in wall thickness of the casting of iron-nickel-aluminium-bronze, by the reduction of the cooling rate the size of κII phase precipitates increases. This process, in the case of complex aluminium bronzes with additions of Cr, Mo and W is increased. Crystallization of big κII phase, during slow cooling of the casting, reduces the concentration of additives introduced to the bronze matrix and hardness. Undertaken research to develop technology of thick-walled products (g> 6 mm of complex aluminium bronzes. Particular attention was paid to the metallurgy of granules. As a result, a large cooling speed of the alloy, and also high-speed solidification casting a light weight of the granules allows: to avoid micro-and macrosegregation, decreasing the particle size, increase the dispersion of phases in multiphase alloys. Depending on the size granules as possible is to provide finished products with a wall thickness greater than 6 mm by infiltration of liquid alloy of granules (composites. Preliminary studies was conducted using drip method granulate of CuAl10Fe5Ni5 bronze melted in a INDUTHERM-VC 500 D Vacuum Pressure Casting Machine. This bronze is a starting alloy for the preparation of the complex aluminium bronzes with additions of Cr, Mo, W and C or Si. Optimizations of granulation process was carried out. As the process control parameters taken a casting temperature t (°C and the path h (mm of free-fall of the metal droplets in the surrounding atmosphere before it is intensively cooled in a container of water. The granulate was subjected to a sieve analysis. For the objective function was assume maximize of the product of Um*n, the percentage weight “Um” and the quantity of granules ‘n’ in the mesh fraction. The maximum value of the ratio obtained for mesh fraction a sieve with a mesh aperture of 6.3 mm. In the intensively cooled granule of bronze was identified microstructure composed of phases: β and fine bainite

Chromaticity and Glossiness of Gold, Silver, and Bronze Colors

Directory of Open Access Journals (Sweden)

Tomohisa Matsumoto

2011-05-01

Full Text Available Appearance of metallic colors, such as gold, silver and bronze, depends on chromaticity and glossiness of a surface. We aim to obtain the chromaticity region of gold, silver, and bronze by using CG simulated surfaces with various glossiness. The physical glossiness was defined by the intensity ratio of specular reflectance of the surface stimulus. The observer estimated degree of perceived glossiness, and also degree of gold, silver, or bronze appearance of the stimulus with a physical glossiness and a chromaticity. The results showed that the stimulus began to appear gold, silver or bronze at a certain chromaticity point only when the stimulus had glossiness. The chromaticity range, where gold, silver and bronze colors were observed, expanded as the degree of glossiness increased. Furthermore the ratio of the degree of gold, silver or bronze colors to that of glossiness of the stimulus was found to be different among the chromaticity points of the stimulus. This ratio was highest with highly saturated stimuli for gold and bronze colors, and with achromatic stimuli for silver color.

Population genomics of Bronze Age Eurasia.

Science.gov (United States)

Allentoft, Morten E; Sikora, Martin; Sjögren, Karl-Göran; Rasmussen, Simon; Rasmussen, Morten; Stenderup, Jesper; Damgaard, Peter B; Schroeder, Hannes; Ahlström, Torbjörn; Vinner, Lasse; Malaspinas, Anna-Sapfo; Margaryan, Ashot; Higham, Tom; Chivall, David; Lynnerup, Niels; Harvig, Lise; Baron, Justyna; Della Casa, Philippe; Dąbrowski, Paweł; Duffy, Paul R; Ebel, Alexander V; Epimakhov, Andrey; Frei, Karin; Furmanek, Mirosław; Gralak, Tomasz; Gromov, Andrey; Gronkiewicz, Stanisław; Grupe, Gisela; Hajdu, Tamás; Jarysz, Radosław; Khartanovich, Valeri; Khokhlov, Alexandr; Kiss, Viktória; Kolář, Jan; Kriiska, Aivar; Lasak, Irena; Longhi, Cristina; McGlynn, George; Merkevicius, Algimantas; Merkyte, Inga; Metspalu, Mait; Mkrtchyan, Ruzan; Moiseyev, Vyacheslav; Paja, László; Pálfi, György; Pokutta, Dalia; Pospieszny, Łukasz; Price, T Douglas; Saag, Lehti; Sablin, Mikhail; Shishlina, Natalia; Smrčka, Václav; Soenov, Vasilii I; Szeverényi, Vajk; Tóth, Gusztáv; Trifanova, Synaru V; Varul, Liivi; Vicze, Magdolna; Yepiskoposyan, Levon; Zhitenev, Vladislav; Orlando, Ludovic; Sicheritz-Pontén, Thomas; Brunak, Søren; Nielsen, Rasmus; Kristiansen, Kristian; Willerslev, Eske

2015-06-11

The Bronze Age of Eurasia (around 3000-1000 BC) was a period of major cultural changes. However, there is debate about whether these changes resulted from the circulation of ideas or from human migrations, potentially also facilitating the spread of languages and certain phenotypic traits. We investigated this by using new, improved methods to sequence low-coverage genomes from 101 ancient humans from across Eurasia. We show that the Bronze Age was a highly dynamic period involving large-scale population migrations and replacements, responsible for shaping major parts of present-day demographic structure in both Europe and Asia. Our findings are consistent with the hypothesized spread of Indo-European languages during the Early Bronze Age. We also demonstrate that light skin pigmentation in Europeans was already present at high frequency in the Bronze Age, but not lactose tolerance, indicating a more recent onset of positive selection on lactose tolerance than previously thought.

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

International Nuclear Information System (INIS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-01-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

Tungsten oxide thin film exposed to low energy D and He plasma: evidence for a thermal enhancement of the erosion yield

Science.gov (United States)

Hijazi, Hussein; Martin, C.; Roubin, P.; Addab, Y.; Cabie, C.; Pardanaud, C.; Bannister, M.; Meyer, F.

2017-10-01

Nanocrystalline tungsten oxide thin films (25 nm - 250 nm thickness) produced by thermal oxidation of a tungsten substrate were exposed to low energy D and He plasma. Low energy D plasma exposure (11 eV/D+) of these films have resulted in the formation of a tungsten bronze (DxWO3) clearly observed by Raman microscopy. D plasma bombardment (4 1021 m-2) has also induced a color change of the oxide layer which is similar to the well-known electro-chromic effect and has been named ``plasma-chromic effect''. To unravel physical and chemical origins of the modifications observed under exposure, similar tungsten oxide films were also exposed to low energy helium plasma (20 eV/He+) . Due to the low fluence (4 1021 m-2) and low ion energy (20 eV), at room temperature, He exposure has induced only very few morphological and structural modifications. On the contrary, at 673 K, significant erosion is observed, which gives evidence for an unexpected thermal enhancement of the erosion yield. We present here new results concerning He beam exposures at low fluence (4 1021 m-2) varying the He+ energy from 20 eV to 320 eV to measure the tungsten oxide sputtering threshold energy. Detailed analyses before/after exposure to describe the D and He interaction with the oxide layer, its erosion and structural modification at the atomic and micrometer scale will be presented.

A lead isotope ratio data base of ancient Chinese bronzes

International Nuclear Information System (INIS)

Jin Zhengyao

2005-01-01

A data base of lead isotope ratio of ancient Chinese bronzes is set up. There are 2888 members, including bronze objects, casting remains, and related ores, etc. in the file. The file contents of data base are made from analysis work on Chinese bronze previously carried out in several laboratories in China, Japan and USA. The main body of the file contents is formed from records, analysis data, reference documents, and images. The data base is designed for sharing information in provenance study on raw metal material for bronze production in China Bronze Age. (author)

Characterizations of photoconductivity of graphene oxide thin films

Directory of Open Access Journals (Sweden)

Shiang-Kuo Chang-Jian

2012-06-01

Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

New Research on Bronze Age Textile Production

DEFF Research Database (Denmark)

Andersson, Eva Birgitta; Mårtensson, Linda; Nosch, Marie-Louise Bech

2008-01-01

presentation of the results from the systematic tests with Bronze Age textile tools. results concerning mesurements of lenght and time consumed.......presentation of the results from the systematic tests with Bronze Age textile tools. results concerning mesurements of lenght and time consumed....

Corrosion evaluation of traditional and new bronzes for artistic castings

International Nuclear Information System (INIS)

Chiavari, C.; Colledan, A.; Frignani, A.; Brunoro, G.

2006-01-01

By electrochemical and accelerated weathering tests, the corrosion behaviour of a new type of tin-bronze, containing about 3 wt.% silicon (SI3 bronze) was compared to a traditional 5% Sn, 5% Zn, 5% Pb bronze used for artistic castings (G85 bronze) under conditions simulating urban-industrial and marine environments. The aggressive media were: a synthetic pH 3.1 acid rain (AR) solution; a typical moist SO 2 -NO x for a climatic chamber and AR or 3.5% NaCl aqueous solution for salt spray cabinet. In all the environments the corrosion product layers formed on SI3 bronze were more uniform and protective than those formed on the traditional G85 bronze. The nature and morphology of the corrosion products were investigated by X-ray diffraction (XRD), optical and scanning electron microscopy with microprobe (SEM-EDS), atomic force microscopy (AFM)

77 FR 14600 - Pricing for 2012 Kennedy Half-Dollar Bags and Rolls, Bronze Medals, the First Spouse Bronze Medal...

Science.gov (United States)

2012-03-12

... DEPARTMENT OF THE TREASURY United States Mint Pricing for 2012 Kennedy Half-Dollar Bags and Rolls, Bronze Medals, the First Spouse Bronze Medal Set and the Birth Set AGENCY: United States Mint, Department of the Treasury. ACTION: Notice. SUMMARY: The United States Mint is announcing 2012 pricing for...

Valence control of cobalt oxide thin films by annealing atmosphere

International Nuclear Information System (INIS)

Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

2011-01-01

The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

International Nuclear Information System (INIS)

Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

2014-01-01

A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

Energy Technology Data Exchange (ETDEWEB)

Yoo, Hwansu; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

2014-11-15

A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

Energy Technology Data Exchange (ETDEWEB)

Deng, Chunqing, E-mail: cdeng@uwaterloo.ca; Otto, M.; Lupascu, A., E-mail: alupascu@uwaterloo.ca [Institute for Quantum Computing, Department of Physics and Astronomy, and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

2014-01-27

We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

Thermal and Electrical Conductivity Measurements of CDA 510 Phosphor Bronze

Science.gov (United States)

Tuttle, James E.; Canavan, Edgar; DiPirro, Michael

2009-01-01

Many cryogenic systems use electrical cables containing phosphor bronze wire. While phosphor bronze's electrical and thermal conductivity values have been published, there is significant variation among different phosphor bronze formulations. The James Webb Space Telescope (JWST) will use several phosphor bronze wire harnesses containing a specific formulation (CDA 510, annealed temper). The heat conducted into the JWST instrument stage is dominated by these harnesses, and approximately half of the harness conductance is due to the phosphor bronze wires. Since the JWST radiators are expected to just keep the instruments at their operating temperature with limited cooling margin, it is important to know the thermal conductivity of the actual alloy being used. We describe an experiment which measured the electrical and thermal conductivity of this material between 4 and 295 Kelvin.

Valence control of cobalt oxide thin films by annealing atmosphere

Energy Technology Data Exchange (ETDEWEB)

Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

2011-02-01

The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

Effect of tempering on corrosion resistance of cast aluminium bronzes

International Nuclear Information System (INIS)

Aaltonen, P.; Klemetti, K.; Haenninen, H.

1985-01-01

The subject of this study is corrosion resistance of aluminium bronzes, which are copper base alloys containing aluminium up to 12% with additions of nickel, iron and manganese. The main conclutions that can be drawn are: (1) The dealloying corrosion resistance of nickel-aluminium bronze is much better than that of aluminium bronze with iron and manganese additions, but it is not immune; (2) The dealloying corrosion resistance of aluminium bronzes can be improved by appropiate heat treatments. The best properties were obtained by temperering between 600 and 800 deg C, depending on the initial microstructure; (3) In crevice conditions, where local acidification can occur, dealloying of aluminium bronzes is a consequence of the preferential attack of aluminium-rich phases. By appropriate tempering, a uniform distribution of aluminium-rich phases is obtained and the continous path for selective corrosion is not formed

Origin of the mysterious Yin-Shang bronzes in China indicated by lead isotopes.

Science.gov (United States)

Sun, Wei-dong; Zhang, Li-peng; Guo, Jia; Li, Cong-ying; Jiang, Yu-hang; Zartman, Robert E; Zhang, Zhao-feng

2016-03-18

Fine Yin-Shang bronzes containing lead with puzzlingly highly radiogenic isotopic compositions appeared suddenly in the alluvial plain of the Yellow River around 1400 BC. The Tongkuangyu copper deposit in central China is known to have lead isotopic compositions even more radiogenic and scattered than those of the Yin-Shang bronzes. Most of the Yin-Shang bronzes are tin-copper alloys with high lead contents. The low lead and tin concentrations, together with the less radiogenic lead isotopes of bronzes in an ancient smelting site nearby, however, exclude Tongkuangyu as the sole supplier of the Yin-Shang bronzes. Interestingly, tin ingots/prills and bronzes found in Africa also have highly radiogenic lead isotopes, but it remains mysterious as to how such African bronzes may have been transported to China. Nevertheless, these African bronzes are the only bronzes outside China so far reported that have lead isotopes similar to those of the Yin-Shang bronzes. All these radiogenic lead isotopes plot along ~2.0-2.5 Ga isochron lines, implying that deposits around Archean cratons are the most likely candidates for the sources. African cratons along the Nile and even micro-cratons in the Sahara desert may have similar lead signatures. These places were probably accessible by ancient civilizations, and thus are the most favorable suppliers of the bronzes.

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

Science.gov (United States)

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

The role of oxide structure on copper wire to the rubber adhesion

Science.gov (United States)

Su, Yea-Yang; Shemenski, Robert M.

2000-07-01

Most metals have an oxide layer on the surface. However, the structure of the oxide varies with the matrix composition, and depends upon the environmental conditions. A bronze coating, nominal composition of 98.5% Cu and balance of Sn, is applied to steel wire for reinforcing pneumatic tire beads and to provide adhesion to rubber. This work studied the influence of copper oxides on the bronze coating on adhesion during vulcanization. To emphasize the oxide structures, electrolytic tough pitch (ETP) copper wire was used instead of the traditional bronze-coated tire bead wire. Experimental results confirmed the hypothesis that cuprous oxide (Cu 2O) could significantly improve bonding between copper wire and rubber, and demonstrated that the interaction between rubber and oxide layer on wire is an electrochemical reaction.

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Setup of Galvanic Sensors for the Monitoring of Gilded Bronzes

Directory of Open Access Journals (Sweden)

Sara Goidanich

2014-04-01

Full Text Available Traditional electrochemical techniques, such as linear polarization resistance (Rp, and electrochemical impedance spectroscopy (EIS, cannot be applied to gilded bronzes, as it may not be possible to interpret the results obtained due to the bimetallic nature of the studied material. The measurement of the macrocouple current generated by the gold/bronze galvanic couple can be used as an indicator of degradation processes. Nevertheless, this measurement cannot be performed directly on the original artifacts due to the systematic presence of short-circuits between the two metals. In the present work the use of galvanic sensors is proposed as a possible solution for the monitoring of gilded bronze artefacts. The sensors have been designed to simulate real gilded bronze surfaces in terms of composition and stratigraphy and have proved to be a reliable diagnostic tool for the in situ monitoring of the rates of deterioration of gilded bronze surfaces and to test new conservation treatments. Their set-up and application is reported and their performances discussed.

Archaeological investigations of the Bronze Age village of Bagnara di Romagna (RA

Directory of Open Access Journals (Sweden)

Maurizio Cattani

2014-12-01

Full Text Available This paper summarizes the results of researches carried out in the area next to the modern village of Bagnara di Romagna (RA, where several evidences related to a Bronze Age settlement have been collected. Recently test trenches and surface collections allowed to retrieve bronze and ceramics dating from the Middle Bronze Age (phase BM2 to the Recent Bronze Age (phase BR2. The analysis of landscape and the palaeoenvironmental reconstruction complete the outline of the region of Imola, Faenza and Lugo during the Bronze Age where are well known the ancient settlements of Solarolo, via Ordiere, Monte Castellaccio end S. Giuliano di Toscanella.

Deposition and characterisation of epitaxial oxide thin films for SOFCs

KAUST Repository

Santiso, José

2010-10-24

This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

Conductive transition metal oxide nanostructured electrochromic material and optical switching devices constructed thereof

Science.gov (United States)

Mattox, Tracy M.; Koo, Bonil; Garcia, Guillermo; Milliron, Delia J.; Trizio, Luca De; Dahlman, Clayton

2017-10-10

An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant, a solid state electrolyte, and a counter electrode. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) spectrum and visible spectrum radiation as a function of an applied voltage to the device.

Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

International Nuclear Information System (INIS)

Kobayashi, H.; Kim, W. B.; Matsumoto, T.

2011-01-01

We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

Particle size and kind of mica in synthesis of nontoxic bronze and gold pearlescent pigments based on nanoencapsulated hematite

Directory of Open Access Journals (Sweden)

Maryam Hosseini-Zori

2015-12-01

Full Text Available Nano-encapsulated iron oxide in Zirconium oxide-coated mica pigments are thermally stable,innocuous to human health, non-combustible, and they do not conduct electricity. They could beapplied in several industries such as thermoplastics, cosmetics, food packaging, children toys, paints,automobiles coating, security purposes, and banknotes. Nowadays, they are highly desirable inceramic decoration. In the present study, intensively dark gold to bronze colored mica clay pigments,which were based on mica flakes covered with a layer of nano-iron oxide-Zirconium oxide particles,were prepared by homogeneous precipitation of iron nitrate and Zirconium chloride ammonia in thepresence of mica flakes in two kinds of ore clay-based phlogopite and muscovite minerals. The finalcolor was obtained by thermal annealing of precipitates at a temperature of 800◦C. The pigments werecharacterized by X-Ray Diffraction, Particle size analysis, Scanning electron microscopy,Transmission electron microscopy, X-Ray fluorescence, and Simultaneous thermal analysis. Resultsindicate that nano-encapsulated iron oxide in zirconia particles have been formed on mica flakes andkinds of clay-mica can be related to obtained shade from dark gold to bronze pearl. Higher particlesize of mica flakes about phlogopite type of mica introduced pearl effects with higher L* changes indifferent angles. Muscovite performed higher hue and better pearl effect than phlogopite.

High-resolution angle-resolved photoemission investigation of potassium and phosphate tungsten bronzes

International Nuclear Information System (INIS)

Paul, Sanhita; Kumari, Spriha; Raj, Satyabrata

2016-01-01

Highlights: • Electronic structure of potassium and phosphate tungsten bronzes. • Origin of transport anomalies in bronzes. • Flat segments of Fermi surfaces are connected by a nesting vector, q. • Nesting driven charge-density wave is responsible for the anomalies. - Abstract: We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) and density functional ab initio theoretical calculation to study the electronic structure of potassium (K_0_._2_5WO_3) and phosphate (P_4W_1_2O_4_4) tungsten bronzes. We have experimentally determined the band dispersions and Fermi surface topology of these bronzes and compared with our theoretical calculations and a fair agreement has been seen between them. Our experimental as well as theoretical investigation elucidates the origin of transport anomalies in these bronzes. The Fermi surfaces of these bronzes consist of flat patches, which can be connected with each other by a constant nesting wave vector, q. The scattering wave vectors found from diffraction measurements match with these nesting vectors and the anomalies in the transport properties of these bronzes can be well explained by the evolution of charge-density wave with a partial nesting between the flat segments of the Fermi surfaces.

Tantalum oxide thin films as protective coatings for sensors

DEFF Research Database (Denmark)

Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

1999-01-01

Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... with pH values in the range from pH 2 to 11 have generally given etch rates below 0.04 Å h-l. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex situ...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

Tantalum oxide thin films as protective coatings for sensors

DEFF Research Database (Denmark)

Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

1999-01-01

Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p......H values in the range from pH 2-11 have generally given etch rates below 0.04 Å/h. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex-situ annealing in O2...... the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallisation lines are hard to cover. Sputtered tantalum oxide exhibits high...

Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

Energy Technology Data Exchange (ETDEWEB)

Coloma Ribera, R., E-mail: r.colomaribera@utwente.nl; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2015-08-07

In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

Inhibitory Effect Evaluation of Glycerol-Iron Oxide Thin Films on Methicillin-Resistant Staphylococcus aureus

Directory of Open Access Journals (Sweden)

C. L. Popa

2015-01-01

Full Text Available The main purpose of this study was to evaluate the inhibitory effect of glycerol- iron oxide thin films on Methicillin-Resistant Staphylococcus aureus (MRSA. Our results suggest that glycerol-iron oxide thin films could be used in the future for various biomedical and pharmaceutical applications. The glycerol-iron oxide thin films have been deposited by spin coating method on a silicon (111 substrate. The structural properties have been studied by X-ray diffraction (XRD and scanning electron spectroscopy (SEM. The XRD investigations of the prepared thin films demonstrate that the crystal structure of glycerol-iron oxide nanoparticles was not changed after spin coating deposition. On the other hand, the SEM micrographs suggest that the size of the glycerol-iron oxide microspheres increased with the increase of glycerol exhibiting narrow size distributions. The qualitative depth profile of glycerol-iron oxide thin films was identified by glow discharge optical emission spectroscopy (GDOES. The GDOES spectra revealed the presence of the main elements: Fe, O, C, H, and Si. The antimicrobial activity of glycerol-iron oxide thin films was evaluated by measuring the zone of inhibition. After 18 hours of incubation at 37°C, the diameters of the zones of complete inhibition have been measured obtaining values around 25 mm.

Manufacturing method of the bronze metallic filters

International Nuclear Information System (INIS)

Krivij, N.; Suwardjo, W.; Garcia, L.; Cores, A.; Formoso, A.

1997-01-01

Granulated (spherical) powders of bronze have been produced by spraying molten metal with gas at high pressure in the experimental industrial installation belonging to the Metallurgical Research Centre (CIME) in Havana City. A physical-chemical and technological characterisation of the spherical bronze powder has been carried out and the optimum parameters have been determined from these powders. The mechanical properties of these filters can satisfactorily rival in applications such as in motor transport goods, in industry and agriculture. (AUthor)

Metallography and microstructure interpretation of some archaeological tin bronze vessels from Iran

Energy Technology Data Exchange (ETDEWEB)

Oudbashi, Omid, E-mail: o.oudbashi@aui.ac.ir [Department of Conservation of Historic Properties, Faculty of Conservation, Art University of Isfahan, Hakim Nezami Street, Sangtarashha Alley, P.O. Box 1744, Isfahan (Iran, Islamic Republic of); Davami, Parviz, E-mail: pdavami@razi-foundation.com [Faculty of Material Science and Engineering, Sharif University of Technology/Razi Applied Science Foundation, No. 27, Fernan St., Shahid Ghasem Asghari Blvd., km 21 of Karadj Makhsous Road, Tehran (Iran, Islamic Republic of)

2014-11-15

Archaeological excavations in western Iran have recently revealed a significant Luristan Bronzes collection from Sangtarashan archaeological site. The site and its bronze collection are dated to Iron Age II/III of western Iran (10th–7th century BC) according to archaeological research. Alloy composition, microstructure and manufacturing technique of some sheet metal vessels are determined to reveal metallurgical processes in western Iran in the first millennium BC. Experimental analyses were carried out using Scanning Electron Microscopy–Energy Dispersive X-ray Spectroscopy and Optical Microscopy/Metallography methods. The results allowed reconstructing the manufacturing process of bronze vessels in Luristan. It proved that the samples have been manufactured with a binary copper–tin alloy with a variable tin content that may relates to the application of an uncontrolled procedure to make bronze alloy (e.g. co-smelting or cementation). The presence of elongated copper sulphide inclusions showed probable use of copper sulphide ores for metal production and smelting. Based on metallographic studies, a cycle of cold working and annealing was used to shape the bronze vessels. - Highlights: • Sangtarashan vessels are made by variable Cu-Sn alloys with some impurities. • Various compositions occurred due to applying uncontrolled smelting methods. • The microstructure represents thermo-mechanical process to shape bronze vessels. • In one case, the annealing didn’t remove the eutectoid remaining from casting. • The characteristics of the bronzes are similar to other Iron Age Luristan Bronzes.

Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

International Nuclear Information System (INIS)

Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

2015-01-01

The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

International Nuclear Information System (INIS)

Predoi, D.; Ciobanu, C.S.; Radu, M.; Costache, M.; Dinischiotu, A.; Popescu, C.; Axente, E.; Mihailescu, I.N.; Gyorgy, E.

2012-01-01

Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: ► Hybrid, dextran-iron oxide nanoparticles and thin films. ► Laser immobilization. ► Biocompatibility of dextran-iron oxide nanoparticles.

Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

International Nuclear Information System (INIS)

Patil, R B; Puri, R K; Puri, V

2008-01-01

Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

Science.gov (United States)

Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-07-01

In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

Oxidation of scandium thin films on tungsten surface

International Nuclear Information System (INIS)

Gorodetskij, D.A.; Martynyuk, A.V.

1988-01-01

Presence of Sc on the surface of W in amounts larger than a monolayer coverage leads to a decrease of the work function at the initial oxidation stage, which is attributed to oxygen implantation into the surface layer of the metal. A subsequent oxidation is followed by the formation on the surface of a thin oxide layer and an increase of the work function. An increase of the amount of Sc deposited on the surface before the oxidation decreases the work function of the obtained oxide from 5.8 (clean W surface) down to 3.3 eV (thick Sc layer on W)

Synchrotron X-ray diffraction and imaging of ancient Chinese bronzes

International Nuclear Information System (INIS)

Young, M.L.; Dunand, D.C.; Casadio, F.; Schnepp, S.; Almer, J.; Haeffner, D.R.

2006-01-01

High-energy synchrotron X-ray diffraction and imaging experiments were performed at the Advanced Photon Source on two ancient Chinese bronzes from the Art Institute of Chicago with the goal to nondestructively study their microstructure. The first object, a bronze fragment from an early Western Zhou dynasty vessel (Hu, 11th/10th century B.C.), was investigated with spatially-resolved diffraction to reveal the depth and composition of the surface corrosion layer as well as the composition and grain size of the underlying bronze core. The second object, a bronze dagger-axe (Ge, 3rd/2nd century B.C.) with a silver-inlaid sheath, was studied under both diffraction and imaging conditions. It was found to have been cast as a single object, answering longstanding scholars' questions on whether the ceremonial object concealed an interior blade. (orig.)

Influence of annealing on texture properties of cerium oxide thin films

International Nuclear Information System (INIS)

Arunkumar, P.; Suresh Babu, K.; Ramaseshan, R.; Dash, S.

2013-01-01

Future power demand needs an energy source with higher efficiency, better power density, clean energy and fuel flexibility. Solid oxide fuel cell (SOFC) is one of the potential sources for future needs. Though the polymer and direct methanol based electrolyte are much suitable, for versatile applications (portable devices) they are having major challenges such as design, platinum based catalyst, lower power density and fuel flexibility (free from hydrocarbons). However, in SOFC the high operating temperature is the only major issue. Operating temperature of SOFC could be reduced by proper selection of electrolyte material which should have minimum ionic conductivity of 0.1 Scm -1 at reduced activation energy. This can be achieved by thin film based doped cerium oxide electrolyte for SOFC, leads to Intermediate Temperature Solid Oxide Fuel Cell (ITSOFC). In the present work, we focus on the synthesis of cerium oxide and 20 mol % samarium doped cerium oxide (SDC) nanoparticles by co-precipitation method and to synthesis thin films of the same. Pellets of those powders were heat treated at different temperatures and used as targets for e-beam evaporation to fabricate thin film based electrolyte. Stoichiometry of both powders and thin films were confirmed by XRF and EPMA. GIXRD profiles of ceria and SDC thin films are shown below and a preferred orientation effect is observed in SDC films. In SDC films the X-ray peaks have a shift towards lower angles, due to the difference in ionic radii of Ce 4+ and Sm 3+ . The band gap of CeO 2 (2.88 eV) from optical absorption technique indicates the presence of Ce 3+ with Ce 4+ , indirectly shows the concentration of oxygen vacancies which is required for the thin film electrolyte

Evaluation of copper, aluminum bronze, and copper-nickel container material for the Yucca mountain project

International Nuclear Information System (INIS)

Kass, J.

1990-01-01

Copper, 70 percent aluminum bronze, and 70/30 copper-nickel were evaluated as potential waste-packaging materials as part of the Yucca Mountain Project. The proposed waste repository site is under a desert mountain in southern Nevada. The expected temperatures at the container surface are higher than at other sites, about 250C at the beginning of the containment period; they could fall below the boiling point of water during this period, but will be exposed to very little water, probably less than 5 l/a. Initial gamma flux will be 10 4 rad/h, and no significant hydrostatic or lithostatic pressure is expected. Packages will contain PWR or BWR fuel, or processed-glass waste. Three copper alloys are being considered for containers: oxygen-free copper (CDA 102); 7 percent aluminum bronze (CDA 613); and 70/30 copper-nickel (CDA 715). Phase separation due to prolonged thermal exposure could be a problem for the two alloys, causing embrittlement. The reduction of internal oxides present in pure copper by hydrogen could cause mechanical degradation. Corrosion and oxidation rates measured for the three materials in well water with and without gamma irradiation at flux rates about ten times higher than those expected were all quite small. The corrosion/oxidation rates for CDA715 show a marked increase under irradiation, but are still acceptable. In the presence of ammonia and other nitrogen-bearing species stress corrosion cracking (SCC) is a concern. Welded U-bend specimens of all three materials have been tested for up to 10000 h in highly irradiated environments, showing no SCC. There was some alloy segregation in the Al bronze specimens. The investigators believe that corrosion and mechanical properties will not present problems for these materials at this site. Further work is needed in the areas of weld inspection, welding techniques, embrittlement of weld metal, the effects of dropping the containers during emplacement, and stress corrosion cracking. Other materials

Picosecond laser registration of interference pattern by oxidation of thin Cr films

Energy Technology Data Exchange (ETDEWEB)

Veiko, Vadim; Yarchuk, Michail [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation); Zakoldaev, Roman, E-mail: zakoldaev@gmail.com [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation); Gedvilas, Mindaugas; Račiukaitis, Gediminas [Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300, Vilnius (Lithuania); Kuzivanov, Michail; Baranov, Alexander [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation)

2017-05-15

Highlights: • Periodical patterning of thin films was achieved by combining two technologies. • Selective chemical etching was combined with laser-induced oxidation. • Formation of the protective oxide layer prevented of chromium film from etching. • 1D binary grating with the chromium stripe width of 750 nm was fabricated. - Abstract: The laser oxidation of thin metallic films followed by its selective chemical etching is a promising method for the formation of binary metal structures on the glass substrates. It is important to confirm that even a single ultrashort laser pulse irradiation is able to create the protective oxide layer that makes possible to imprint the thermochemical image. Results of the thermo-chemical treatment of thin chromium films irradiated by picosecond laser pulse utilizing two and four beam interference combined with the chemical etching are presented. The spatial resolution of this method can be high enough due to thermo-chemical sharpening and can be close to the diffraction limit. Micro-Raman spectroscopy was applied for characterization of the chemical composition of the protective oxide layers formed under atmospheric conditions on the surface of thin chromium films.

Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

Energy Technology Data Exchange (ETDEWEB)

Predoi, D.; Ciobanu, C.S. [National Institute for Physics of Materials, P.O. Box MG 07, Bucharest, Magurele (Romania); Radu, M.; Costache, M.; Dinischiotu, A. [Molecular Biology Center, University of Bucharest, 91-95 Splaiul Independentei, 76201, Bucharest 5 (Romania); Popescu, C.; Axente, E.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Gyorgy, E., E-mail: egyorgy@cin2.es [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Consejo Superior de Investigaciones Cientificas, Centre d' Investigacions en Nanociencia i Nanotecnologia (CSIC-CIN2), Campus UAB, 08193 Bellaterra (Spain)

2012-02-01

Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: Black-Right-Pointing-Pointer Hybrid, dextran-iron oxide nanoparticles and thin films. Black-Right-Pointing-Pointer Laser immobilization. Black-Right-Pointing-Pointer Biocompatibility of dextran-iron oxide nanoparticles.

High temperature oxidation of thin FeCrAl strips

International Nuclear Information System (INIS)

Andrieu, E.; Germidis, A.; Molins, R.

1997-01-01

This study concerns the oxidation behaviour between 850 and 1100 C of FeCrAl thin strips. Oxidation kinetics have been continuously recorded on a thermobalance as well as discontinuously in an ''industrial'' furnace. Detailed observations of oxide layers have been performed in transmission electron microscopy on oxidized thin foil cross-sections. Oxide morphologies are correlated with kinetics: Slow kinetics and columnar α alumina grains above 950 C, fast kinetics and transition alumina platelets (γ-alumina) at 850 C and 900 C, followed by small α-alumina grains formation underneath. The weight gains in the industrial furnace displayed significant scatter and were generally greater than those measured in the thermobalance. The effect of extrinsic factors such as specimen size and shape, atmosphere, air flow conditions on the early formation of transition aluminas explains the observed differences. It appears then that in given cases parabolic constant identification from TGA recordings is difficult, or even impossible. This might contribute to explain the differences in the results presented in the literature. (orig.)

Copper smelting and sediment pollution in Bronze Age China.

Science.gov (United States)

Zhang, S.; Dong, G.

2017-12-01

The emergence and diffusion of metallurgical technology had tremendous environmental consequence, however, the spatial-temporal consequences of the metallurgy during Bronze Age are not clear in China. Here, Xray fluorescence (XRF) measurement and principal component analysis (PCA) were conducted on heavy metal element (Cu, Ni, Pb, Zn, Cr and As) concentrations (HMEC) of natural and anthropogenic sediment samples systematically collected from 22 late Neolithic-Bronze Age sites in Hexi corridor to explore the potential for subcontinental-wide changes in soil geochemistry. We place this data within the context of the Cu concentrations in lacustrine sediments located near smelting and mining centers in Bronze Age China. Our results show that variation of HMEC in anthropogenic sediment in Hexi corridor is contemporaneous with the increases of the Cu concentrations in lacustrine sediment around 4000 BP. Comparative data suggests the metallurgical production diffused from the Hexi corridor to central and southwestern China around 3600 BP. We argue that sediment pollution is not an isolated phenomenon during the Bronze Age China, but rather occurred on regional scales and is closely related to the intensity of smelting activities.

Combined aging of beryllium bronze

International Nuclear Information System (INIS)

Duraev, P.P.; Kaplun, Yu.A.; Pastukhova, Zh.P.; Rakhshtadt, A.G.

1986-01-01

This article evaluates the possibility of increasing the resistance of beryllium bronze to small plastic deformations as a result of the application of stepped aging under stress. Low-temperature aging under conditions of bending under a stress of about 100 MPa was applied to alloy BrBNT1, 9Mg at 150, 180, and 210 0 C, high-temperature aging at 300 and 340 0 C under stress and without stress. As a result of applying stepped aging under stress, the elastic limit of the alloy BrBNT1, 9Mg was raised to 900 MPa. Stepped aging under stress has a substantial effect on the relaxation stability of the alloy. The procedure suggested in the article for aging may be used efficiently for treating elastic elements made of other brands of bronze as well

Chemical solution deposition of functional oxide thin films

CERN Document Server

Schneller, Theodor; Kosec, Marija

2014-01-01

Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

Prompt gamma-ray analysis of archaeological bronze

International Nuclear Information System (INIS)

Oura, Y.; Saito, A.; Sueki, K.; Nakahara, H.; Tomizawa, T.; Nishikawa, T.; Yonezawa, C.; Matsue, H.; Sawahata, H.

1999-01-01

Prompt γ-ray analysis using the internal monostandard method was applied to voluminous archaeological bronze mirrors produced in ancient China. Sn/Cu content ratios were determined nondestructively by this method. Furthermore, Au/Cu, As/Cu, and Sb/Cu content ratios were determined by means of measuring decay γ-rays emitted from radioactive nuclides produced within samples via (n,γ) reactions. It is clear that the Sn/Cu content ratios in bronze mirrors produced in the Sung era is smaller than in ones produced in between the Han and the Tung era. (author)

The Early-Middle bronze ages tombs from the Kartal fortress

Directory of Open Access Journals (Sweden)

Igor Bruiako

2017-09-01

Full Text Available The burials of Early- and Middle Bronze Age discovered by excavations of Kartal hill fort are analyzed in this article. One part of them belongs to the Pit-Grave Culture (later period, another – to the Culture Mnogovalikovaja. Allburials aresituated in the vicinity of ancient site, abandoned during the most part of the Bronze Age. The part of Pit-Grave burials representsflat/ pitgraves (non-kurgan. We assume that the seasonal settlement was located here in some periods of Bronze Age, while in the steppe of Eastern Europe dominated the populations of cattle-breeders.

An important harvest by applying Pb-isotope analysis to ancient Chinese bronzes

International Nuclear Information System (INIS)

Jin Zhengyao

2003-01-01

Analysing numerous ancient Chinese bronze objects unearthed at the archaeological sites by lead isotopic method, we found that a major portion Shang (1600 B. C.-1100 B. C.) bronzes contained a kind of high-radiogenic lead, The results suggested that there is a 'bronze road' linking the Shang sites in both of the Yellow River valley and the Yangtze River valley in Shang dynasty. (authors)

Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

NARCIS (Netherlands)

Coloma Ribera, R.

2017-01-01

This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

Thermoluminescent response of aluminium oxide thin films subject to gamma irradiation

Energy Technology Data Exchange (ETDEWEB)

Arrieta, A.; Escobar A, L.; Camps, E.; Villagran, E.; Gonzalez, P.R

2006-07-01

The thermoluminescent (TL) properties of amorphous aluminium oxide thin films (thicknesses as low as 0.3 {mu}m) subjected to gamma (Co-60) irradiation are reported. Aluminium oxide thin films were prepared by laser ablation from an Al{sub 2}O{sub 3} target using a Nd: YAG laser with emission at the fundamental line. The films were exposed to gamma radiation (Co-60) in order to study their TL response. Thermoluminescence glow curves exhibited two peaks at 110 and 176 C. The high temperature peak shows good stability and 30% fading in the first 5 days after irradiation. A linear relationship between absorbed dose and the thermoluminescent response for doses span from 150 mGy to 100 Gy was observed. These results suggest that aluminium oxide thin films are suitable for detection and monitoring of gamma radiation. (Author)

Thin film ionic conductors based on cerium oxide

International Nuclear Information System (INIS)

Haridoss, P.; Hellstrom, E.; Garzon, F.H.; Brown, D.R.; Hawley, M.

1994-01-01

Fluorite and perovskite structure cerium oxide based ceramics are a class of materials that may exhibit good oxygen ion and/or protonic conductivity. The authors have successfully deposited thin films of these materials on a variety of substrates. Interesting orientation relationships were noticed between cerium oxide films and strontium titanate bi-crystal substrates. Near lattice site coincidence theory has been used to study these relationships

Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

NARCIS (Netherlands)

Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

2015-01-01

In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

Preparation and characterization of vanadium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

2013-04-16

The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

Multiferroic iron oxide thin films at room temperature

Czech Academy of Sciences Publication Activity Database

Gich, M.; Fina, I.; Morelli, Alessio; Sánchez, F.; Alexe, M.; Gazquez, J.; Fontcuberta, J.; Roig, A.

2014-01-01

Roč. 26, č. 27 (2014), s. 4645-4652 ISSN 0935-9648 Institutional support: RVO:68378271 Keywords : multiferroic * iron oxide * thin film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 17.493, year: 2014

The influence of wall thickness on the microstructure of bronze BA1055 with the additions of Si, Cr, Mo and/or W

Directory of Open Access Journals (Sweden)

B.P. Pisarek

2008-12-01

Full Text Available Aluminium bronzes belong to the high-grade constructional materials applied on the put under strongly load pieces of machines, about good sliding, resistant properties on corrosion both in the cast state how and after the thermal processing. It moves to them Cr and Si in the aim of the improvement of their usable proprieties. Additions Mo and/or W were not applied so far in the larger concentration, these elements were introduced to the melts of the copper as the components of modifiers. It was worked out therefore the new kind of bronzes casting including these elements. Make additions to the Cu-Al-Fe-Ni bronze of Si, Cr, Mo and/or W in the rise of these properties makes possible. The investigations of the influence of the wall thickness of the cast on size of crystallites were conducted: the primary phase β and intermetallic phase κ and the width separates of the secondary phase α precipitate at phase boundary. It results from conducted investigations, that in the aluminium bronze BA1055 after simultaneous makes additions Si, Cr, Mo and in the primary phase β it undergoes considerable reducing size. The addition W reduce size of the grain phase β in the thin walls of the cast 3-6 mm, and addition Cr in the range of the thickness of the wall of the cast 3-6 mm it favors to reducing size the phase β, in walls 12-25 mm the growth causes it. The addition Mo does not influence the change of the size of the grain of the β phase significantly. The make addition singly or simultaneously of the Cr, Mo and W to the bronze CuAl10Fe5Ni5Si it influences the decrease of the quantity separates of the phase α on the interface boundary and of width it separates independently from the thickness of the wall of the cast. The simultaneous make addition of the Si, Cr, Mo and W it enlarges the surface of the phase κFe, κMo. The make addition to the bronze CuAl10Fe5Ni5Si of the Cr, Mo or W the quantity of crystallizing hard phase κ enlarges and the

Structural and optical properties of electrodeposited molybdenum oxide thin films

International Nuclear Information System (INIS)

Patil, R.S.; Uplane, M.D.; Patil, P.S.

2006-01-01

Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

Energy Technology Data Exchange (ETDEWEB)

Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

1996-01-08

This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

Surface and sub-surface thermal oxidation of ruthenium thin films

NARCIS (Netherlands)

Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

2014-01-01

For next generation Extreme UV photolithography, multilayer coatings may require protective capping layers against surface contamination. Ruthenium, as a low-oxidation metal, is often used as a reference material. The oxidation behaviour of Ru thin films has been studied using X-ray reflectometry

Abrasive wear of BA1055 bronze with additives of Si, Cr, Mo and/or W

Directory of Open Access Journals (Sweden)

B. P. Pisarek

2008-10-01

Full Text Available Aluminium bronzes belong to the high-grade constructional materials applied on the put under strongly load pieces of machines, aboutgood sliding, resistant properties on corrosion both in the cast state how and after the thermal processing. It moves to them Cr and Si in the aim of the improvement of their usable proprieties. The additions Mo and/or W were not applied so far. It was worked out therefore the new kind of bronzes casting including these elements. Make additions to the Cu-Al-Fe-Ni bronze of Si, Cr, Mo and/or W in the rise of these properties makes possible. The investigations of the surface distribution of the concentration of elements in the microstructure of the studied bronze on X-ray microanalyzer were conducted. It results from conducted investigations, that in the aluminium bronze BA1055 after makes additions Si, Cr, Mo and/or W the phases of the type κFe, κNi crystallize, probably as complex silicides. Elements such as: Fe and Si dissolve first of all in phases κ, in smaller stage in the matrix of the bronze; Mn, Ni and W they dissolve in matrix and phases κ. It dissolves Cr and Mo in the larger stage in phases κ than in the matrix. The sizes of the abrasive wear were compared in the state cast multicomponentnew casting Cu-Al-Fe-Ni bronzes with the additives Cr, Mo or W with the wear of the bronze CuAl10Fe5Ni5Si. The investigations of thewear were conducted on the standard device. It results from conducted investigations, that make additions to bronze BA1055 of the additives of Si, Cr, Mo, and/or W it influences the rise of the hardness (HB of the bronze in the cast state, in the result of the enlarged quantity separates of hard phases κ, and in the consequence the decrease of the abrasive wear. The addition of molybdenum made possible obtainment of the microhardness of the phase α and γ 2 on the comparable level. From the microstructure of the bronze CuAl10Fe5Ni5MoSi is characterizes the smallest abrasive wear among

Evaluation of some phenothiazine derivatives as corrosion inhibitors for bronze in weakly acidic solution

International Nuclear Information System (INIS)

Bostan, Roxana; Varvara, Simona; Găină, Luiza; Mureşan, Liana Maria

2012-01-01

Highlights: ► Phenothiazine derivatives are efficient inhibitors for bronze corrosion. ► Potentiodynamic polarization and EIS were used to elucidate inhibition mechanism. ► Adsorption of phenothiazine derivatives on bronze surface obeys Langmuir isotherm. ► A correlation between energy gaps and inhibition efficiencies values was obtained. - Abstract: Four phenothiazine derivatives have been tested as inhibitors for bronze corrosion in a solution containing Na 2 SO 4 and NaHCO 3 (pH 5). Electrochemical investigations (potentiodynamic polarisation and impedance measurements) revealed that all phenothiazine derivatives exert a protective effect against bronze corrosion and, in some cases their inhibition efficiency exceeds 90% at concentration level as low as 75 μM. An adherent layer of organic molecules chemisorbed on bronze surface is responsible for the protective effect of the investigated compounds. Adsorption of phenothiazine derivatives on bronze obeys Langmuir isotherm. Correlation between quantum chemical calculations and inhibition efficiency of the investigated compounds was discussed using DFT method.

Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

2014-04-01

The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

Generation of nanoparticles of bronze and brass by laser ablation in liquid

Energy Technology Data Exchange (ETDEWEB)

Sukhov, I.A. [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); Shafeev, G.A., E-mail: Shafeev@kapella.gpi.ru [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); Voronov, V.V. [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); Sygletou, M. [Institute of Electronic Structure and Laser, Foundation for Research and Technology—Hellas (IESL-FORTH), P.O. Box 1527, Heraklion 711 10 (Greece); Department of Physics, University of Crete, Vassilika Vouton, GR-711 10, Heraklion (Greece); Stratakis, E.; Fotakis, C. [Institute of Electronic Structure and Laser, Foundation for Research and Technology—Hellas (IESL-FORTH), P.O. Box 1527, Heraklion 711 10 (Greece)

2014-05-01

Nanoparticles of brass and bronze are generated by ablation of corresponding bulk targets in liquid ethanol. The experiments were performed using three pulsed lasers with different pulse duration: ytterbium fiber laser (80 ns), a Neodymium:YAG laser (10 ps), and femtosecond Ti:sapphire laser (200 fs). The generated nanoparticles (NPs) are characterized by UV–vis absorption spectroscopy, X-ray diffractometry, Raman scattering, and Transmission Electron Microscopy. The size of generated NPs lies in the range 10–25 nm depending on the laser source. The X-ray diffractometry reveals the change of phase composition of brass NPs compared to the initial target in case of ablation with 80 ns laser source, while with 10 ps laser pulses this effect is less pronounced. Brass NPs generated with pico- and femtosecond laser radiation show the plasmon resonance in the vicinity of 560 nm and no plasmon peak for NPs generated with longer laser pulses. Raman analysis shows the presence of Cu{sub 2}O in generated NPs. The stability of generated NPs of both brass and bronze to oxidation is compared to that of Cu NPs generated in similar experimental conditions.

Characterisation of a Proto-historic bronze collection by micro-EDXRF

International Nuclear Information System (INIS)

Figueiredo, Elin; Araújo, M. Fátima; Silva, Rui J.C.; Vilaça, Raquel

2013-01-01

Highlights: ► A collection of Proto-historic metal artefacts was analysed by micro-EDXRF. ► Composition of major and minor elements has been determined. ► Artefacts were manufactured in a bronze alloy with a low impurity pattern. ► The alloy shows parallels with indigenous Late Bronze Age Iberian productions. -- Abstract: Studies concerning European Proto-historic metallic artefacts can provide important clues about technological transfers during a period of time characterised by diverse cultural interactions. A collection of Proto-historic metallic artefacts from Medronhal (western Iberian Peninsula) composed by rings, bracelets and a fibula related to different cultural affiliations were investigated by micro-EDXRF to provide a major and a minor elemental characterisation. Results show that the Medronhal collection was manufactured in a Cu–Sn alloy (binary bronze) with similar Sn contents among the various types of artefacts and a low impurity pattern. Results of the type and quality of metal were compared to other artefact collections to infer about metallurgical parallels. Strong parallels with indigenous Late Bronze Age Iberian metallurgical productions were found

Characterisation of a Proto-historic bronze collection by micro-EDXRF

Energy Technology Data Exchange (ETDEWEB)

Figueiredo, Elin, E-mail: elin@itn.pt [IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Estrada Nacional 10, 2686-953 Sacavém (Portugal); CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Araújo, M. Fátima [IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Estrada Nacional 10, 2686-953 Sacavém (Portugal); Silva, Rui J.C. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Vilaça, Raquel [CEAUCP-FCT, Instituto de Arqueologia, Departamento de História, Arqueologia e Artes, Faculdade de Letras, Universidade de Coimbra, Palácio de Sub-Ripas, 3000-395 Coimbra (Portugal)

2013-02-01

Highlights: ► A collection of Proto-historic metal artefacts was analysed by micro-EDXRF. ► Composition of major and minor elements has been determined. ► Artefacts were manufactured in a bronze alloy with a low impurity pattern. ► The alloy shows parallels with indigenous Late Bronze Age Iberian productions. -- Abstract: Studies concerning European Proto-historic metallic artefacts can provide important clues about technological transfers during a period of time characterised by diverse cultural interactions. A collection of Proto-historic metallic artefacts from Medronhal (western Iberian Peninsula) composed by rings, bracelets and a fibula related to different cultural affiliations were investigated by micro-EDXRF to provide a major and a minor elemental characterisation. Results show that the Medronhal collection was manufactured in a Cu–Sn alloy (binary bronze) with similar Sn contents among the various types of artefacts and a low impurity pattern. Results of the type and quality of metal were compared to other artefact collections to infer about metallurgical parallels. Strong parallels with indigenous Late Bronze Age Iberian metallurgical productions were found.

Non-destructive analysis of archaeological bronzes by nuclear techniques

International Nuclear Information System (INIS)

Respaldiza, M.A.; Gomez-Tubio, B.M.; Sanchez del Junco, A.; Barranco, F.; Saiz-Jimenez, C.

1994-01-01

This paper studies a method for overcoming the difficulty of corroded surfaces by means of nondestructive nuclear methods in the determination of the composition of archaeological bronzes. It consists of the combination of PIXE or XRF information with Gamma Ray Transmission (GRT) data. A wide range applicability of this combined method is established by comparison with profiles of concentrations along the bronzes' patina obtained by SEM-EDAX. (orig.)

Behavior of the monophosphate tungsten bronzes (PO2)4(WO3)2m (m = 7 and 8) in the course of electrochemical lithium insertion

International Nuclear Information System (INIS)

Martinez-de la Cruz, A.; Longoria Rodriguez, F.E.; Gonzalez, Lucy T.; Torres-Martinez, Leticia M.

2007-01-01

The electrochemical lithium insertion process has been studied in the family of monophosphate tungsten bronzes (PO 2 ) 4 (WO 3 ) 2m , where m = 7 and 8. Structural changes in the pristine oxides were followed as lithium insertion proceeded. Through potentiostatic intermittent technique the different processes which take place in the cathode during the discharge of the cell were analyzed. The nature of the bronzes Li x (PO 2 ) 4 (WO 3 ) 2m formed was determined by in situ X-ray diffraction experiments. These results have allowed establishing a correlation with the reversible/irreversible processes detected during the electrochemical lithium insertion

Application of SIMS in patina studies on Bronze Age copper alloys

International Nuclear Information System (INIS)

Wouters, H.J.; Butaye, L.A.; Adams, F.C.

1992-01-01

The potential of secondary ion mass spectrometry for the patina studies on Bronze Age copper alloys is discussed. It is shown that the combined use of metallography, electron probe micro-analysis and ion microscopy can obtain very useful information concerning fabrication technology and corrosion mechanisms of ancient metals. Especially the convenience of measuring ion micrographs for relatively rapid qualitative indication of phases and inclusions, which are of interest for the investigation of different corroded surfaces found on ancient bronzes, is outlined. The results of investigated of two bronze objects with a specific patina appearance are presented. (orig.)

Characterization of corroded bronze Ding from the Yin Ruins of China

International Nuclear Information System (INIS)

Ling, He; Qingrong, Zhao; Min, Gao

2007-01-01

This paper presents the result of scientific examinations carried out on the soil-buried archaeological bronzes Ding from Yin Ruins of China. Eight of typical fragments from different bronze Ding were selected as researched samples according to their deterioration characteristics. Optical microscopy (OM), scanning electron microscopy coupled with energy (SEM-EDX), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to understand the corrosive morphological characteristics, to clear the nature of patina and to analyze the elementary composition of bronze Ding. The results indicated that it is not possible to distinguish the original lustrous metallic surface in most samples because of the corrosive crust. The substrate of bronze Ding contains74-86% Cu, 1.1-4.6% Pb, and 10-18% Sn, which is in agreement with the historical investigation in the ritual vessels of Shang time. Copper-containing compounds were the main constituents of natural patina: Cu 2 (OH) 3 Cl existed as corrosion product in all the powdery or crack surface; Cu 2 (OH) 2 CO 3 was the main corrosive product in a compact and hard corrosive surface. This study provides useful information for the restoration and protection of bronze Ding in Yin Ruins

Population genomics of Bronze Age Eurasia

Czech Academy of Sciences Publication Activity Database

Allentoft, M. E.; Sikora, M.; Sjogren, K.-G.; Rasmussen, S.; Rasmussen, M.; Stenderup, J.; Damgaard, P. B.; Schroeder, H.; Ahlström, T.; Vinner, L.; Malaspinas, A.-S.; Margaryan, A.; Higham, T.; Chivall, D.; Lynnerup, N.; Harvig, L.; Baron, J.; Della Casa, P.; Dabrowski, P.; Duffy, P. R.; Ebel, A. V.; Epimakhov, A.; Frei, K.; Furmanek, M.; Gralak, T.; Gromov, A.; Gronkiewicz, S.; Grupe, G.; Hajdu, T.; Jarysz, R.; Khartanovich, V.; Khokhlov, A.; Kiss, V.; Kolář, Jan; Kriiska, A.; Lasak, I.; Lonhgi, C.; McGlynn, G.; Merkevicius, A.; Merkyte, I.; Metspalu, M.; Mkrtchyan, R.; Moiseyev, V.; Paja, L.; Pilli, G.; Pokutta, D.; Pospieszny, L.; Price, D.; Saag, L.; Sablin, M.; Shishlina, N.; Smrčka, V.; Soenov, V. I.; Szeverenyi, V.; Tóth, G.; Trifanova, S. V.; Varul, L.; Vicze, M.; Yepiskoposyan, L.; Zhitenev, L.; Orlando, L.; Sicheritz-Ponten, T.; Brunak, S.; Nielsen, R.; Kristiansen, K.; Willerslev, E.

2015-01-01

Roč. 522, č. 7555 (2015), s. 167-172 ISSN 0028-0836 Institutional support: RVO:67985939 Keywords : genetics * migration * Bronze Age Subject RIV: AC - Archeology, Anthropology, Ethnology Impact factor: 38.138, year: 2015

Surface and sub-surface thermal oxidation of thin ruthenium films

NARCIS (Netherlands)

Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Kokke, S.; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

2014-01-01

A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low

Nanoporous cerium oxide thin film for glucose biosensor.

Science.gov (United States)

Saha, Shibu; Arya, Sunil K; Singh, S P; Sreenivas, K; Malhotra, B D; Gupta, Vinay

2009-03-15

Nanoporous cerium oxide (CeO(2)) thin film deposited onto platinum (Pt) coated glass plate using pulsed laser deposition (PLD) has been utilized for immobilization of glucose oxidase (GOx). Atomic force microscopy studies reveal the formation of nanoporous surface morphology of CeO(2) thin film. Response studies carried out using differential pulsed voltammetry (DPV) and optical measurements show that the GOx/CeO(2)/Pt bio-electrode shows linearity in the range of 25-300 mg/dl of glucose concentration. The low value of Michaelis-Menten constant (1.01 mM) indicates enhanced enzyme affinity of GOx to glucose. The observed results show promising application of the nanoporous CeO(2) thin film for glucose sensing application without any surface functionalization or mediator.

Synthesis and characterization of zinc oxide thin films prepared by ...

African Journals Online (AJOL)

Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

Surface and sub-surface thermal oxidation of thin ruthenium films

Energy Technology Data Exchange (ETDEWEB)

Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Kokke, S.; Zoethout, E. [FOM Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

2014-09-29

A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

Transparent conductive zinc oxide basics and applications in thin film solar cells

CERN Document Server

Klein, Andreas; Rech, Bernd

2008-01-01

Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

Strain-induced phenomenon in complex oxide thin films

Science.gov (United States)

Haislmaier, Ryan

Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

Thermoluminescent characterization of thin films of aluminium oxide submitted to beta and gamma radiation

International Nuclear Information System (INIS)

Villagran, E.; Escobar A, L.; Camps, E.; Gonzalez, P.R.; Martinez A, L.

2002-01-01

By mean of the laser ablation technique, thin films of aluminium oxide have been deposited on kapton substrates. These films present thermoluminescent response (Tl) when they are exposed to beta and gamma radiation. The brilliance curves show two peaks between 112 C and 180 C. A dose-response relationship study was realized and the Tl kinetic parameters were determined using the computerized deconvolution of the brilliance curve (CGCD). The thin films of aluminium oxide have potential applications as ultra.thin radiation dosemeters. (Author)

Development of wear resistant zirconium oxide thin films on stainless steel substrates

International Nuclear Information System (INIS)

Then, I.K.; Mujahid, M.; Zhang, B.

2005-01-01

The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 μm in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

Development of wear resistant zirconium oxide thin films on stainless steel substrates

Energy Technology Data Exchange (ETDEWEB)

Then, I.K.; Mujahid, M. [School of Materials Engineering, Nanyang Technological Univ. (Singapore); Zhang, B. [Dou Yee Technologies Pte Ltd, Bedok Industrial Park C (Singapore)

2005-07-01

The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 {mu}m in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

Altering properties of cerium oxide thin films by Rh doping

International Nuclear Information System (INIS)

Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

2015-01-01

Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

Propolis as a green corrosion inhibitor for bronze in weakly acidic solution

Science.gov (United States)

Varvara, Simona; Bostan, Roxana; Bobis, Otilia; Găină, Luiza; Popa, Florin; Mena, Vicente; Souto, Ricardo M.

2017-12-01

In the present work, the inhibitive action of natural propolis on bronze corrosion in a weakly acidic solution containing Na2SO4 and NaHCO3 at pH 5 was evaluated using multiscale electrochemical techniques, namely potentiodynamic polarization, electrochemical impedance spectroscopy and scanning vibrating electrode technique measurements. The major constituents of propolis were identified by HPLC. Surface characterization was performed by SEM-EDX and AFM analysis. Experiments were performed as a function of the propolis concentration and immersion time in the corrosive electrolyte. The obtained results showed that propolis presents good anticorrosive properties on bronze, acting as a mixed-type inhibitor, but its protective effectiveness is time-dependent. The highest inhibiting efficiency of 98.9% was obtained in the presence of 100 ppm propolis, after about 12 h of exposure to inhibitor-containing electrolyte through the stabilization of Cu2O on the bronze surface. The inhibitive properties of propolis on bronze corrosion are likely due to the adsorption of its main constituents (flavonoids and phenolic compounds), through the oxygen atoms in their functional groups and aromatic rings, which have been evidenced by FT-IR spectra. The adsorption of propolis on bronze was found to follow Langmuir adsorption isotherm.

Nanostructured manganese oxide thin films as electrode material for supercapacitors

Science.gov (United States)

Xia, Hui; Lai, Man On; Lu, Li

2011-01-01

Electrochemical capacitors, also called supercapacitors, are alternative energy storage devices, particularly for applications requiring high power densities. Recently, manganese oxides have been extensively evaluated as electrode materials for supercapacitors due to their low cost, environmental benignity, and promising supercapacitive performance. In order to maximize the utilization of manganese oxides as the electrode material for the supercapacitors and improve their supercapacitive performance, the nanostructured manganese oxides have therefore been developed. This paper reviews the synthesis of the nanostructured manganese oxide thin films by different methods and the supercapacitive performance of different nanostructures.

Co-sputtered ZnO:Si thin films as transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

2012-12-01

Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

Late Bronze Age hoard studied by PIXE

Energy Technology Data Exchange (ETDEWEB)

Gutierrez Neira, P.C., E-mail: carolina.gutierrez@uam.es [CMAM, Universidad Autonoma de Madrid, c/Farady 3, E-28049 Madrid (Spain); Zucchiatti, A., E-mail: alessandro.zucchiatti@uam.es [CMAM, Universidad Autonoma de Madrid, c/Farady 3, E-28049 Madrid (Spain); Montero-Ruiz, I., E-mail: ignacio.montero@cchs.csic.es [CCHS-CSIC, Albasanz 26-28, E 28037 Madrid (Spain); Vilaca, R., E-mail: rvilaca@fl.uc.pt [University of Coimbra, Largo da Porta Ferrea, 3000-447 Coimbra (Portugal); Bottaini, C., E-mail: keret18@yahoo.it [University of Coimbra, Largo da Porta Ferrea, 3000-447 Coimbra (Portugal); Gener, M., E-mail: marc.gener@cchs.csic.es [CCHS-CSIC, Albasanz 26-28, E 28037 Madrid (Spain); Climent-Font, A., E-mail: acf@uam.es [CMAM, Universidad Autonoma de Madrid, c/Farady 3, E-28049 Madrid (Spain); Department of Applied Physics, Universidad Autonoma de Madrid, Campus Cantobalanco, E-28049 Madrid (Spain)

2011-12-15

The hoards of metallic objects belonging to the Late European Bronze Age can be interpreted differently depending on the type, number and composition of the artefacts. PIXE analysis has been performed in nine items from the Hoard of Freixanda in Portugal comprising four socket axes, a palstave axe, a ring, a chisel, a dagger, and a casting debris. Besides the composition of the main matrix elements, that is Cu and Sn, the amount of trace elements of interest like, As, Pb, Ni, and Ag has been determined using this ion beam technique. The high tin content alloy and the high purity of the metals from the Freixanda hoard are characteristic of the Portuguese and Spanish Late Bronze Age metallurgy, supporting the idea of a regional production.

Thermal oxidation of Ni films for p-type thin-film transistors

KAUST Repository

Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

2013-01-01

p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

International Nuclear Information System (INIS)

Krockenberger, Y.

2006-01-01

The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

Energy Technology Data Exchange (ETDEWEB)

Krockenberger, Y.

2006-07-01

The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

Morphology selection for cupric oxide thin films by electrodeposition.

Science.gov (United States)

Dhanasekaran, V; Mahalingam, T; Chandramohan, R

2011-10-01

Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

Corrosion of Bronzes by Extended Wetting with Single versus Mixed Acidic Pollutants

Directory of Open Access Journals (Sweden)

Liliana Gianni

2014-04-01

Full Text Available The corrosion of bronzes was examined in the context of single-acid versus mixed-acid (as in urban acid rain solutions. Two bi-component bronzes (copper with either 3% Sn or 7% Sn that closely represent those of historic artifacts were immersed for five weeks in conditions designed to replicate those experienced by statues and ornaments in cities where rainfall and humidity constantly produce an electrolyte layer on the surfaces of bronzes. Ions, acids, and particles of pollutants can dissolve in this layer, resulting in a variety of harsh corrosion processes. The kinetics of corrosion and the properties of the resulting patinas were monitored weekly by electrochemical impedance spectroscopy and open-circuit potential measurements. The sizes and appearances of the corrosion products were monitored and used to estimate the progress of the corrosion, whose crystalline structures were visualized using scanning electron microscopy with energy dispersive spectroscopy, identified by X-ray diffraction, and characterized by spectrocolorimetry. The electrochemical measurements demonstrated that greater damage (in terms of color change and corrosion product formation did not correspond to deficiencies in protection. The mixed-acid solution did not corrode the bronzes, as would be expected from the additive effects of the single acids. The postulated mechanisms of metal dissolution appear to be specific to a particular bronze alloy, with the tin component playing an important role.

Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

International Nuclear Information System (INIS)

Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

2006-01-01

Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

Study of thin metal films and oxide materials for nanoelectronics applications

OpenAIRE

De Los Santos Valladares, Luis

2012-01-01

Appendix A Pages 132-134 have been removed from this online version of the thesis for publisher copyright reasons. These had contained page images from the cover of Nanotechnology, Vol. 21, Nov 2010 and its corresponding web alert Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide...

Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxide

International Nuclear Information System (INIS)

Li, W.S.; Wu, Bill; Fan, Aki; Kuo, C.W.; Segovia, M.; Kek, H.A.

2005-01-01

Nitrogen concentration in the gate oxide plays a key role for 90 nm and below ULSI technology. Techniques like secondary ionization mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS) are commonly used for understanding N concentration. This paper describes the application of the carrier illuminationTM (CI) technique to measure the nitrogen concentration in ultra-thin gate oxides. A set of ultra-thin gate oxide wafers with different DPN (decoupled plasma nitridation) treatment conditions were measured using the CI technique. The CI signal has excellent correlation with the N concentration as measured by XPS

Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

Directory of Open Access Journals (Sweden)

Marco Laurenti

2018-02-01

Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

Transparent conductive oxides for thin-film silicon solar cells

NARCIS (Netherlands)

Löffler, J.

2005-01-01

This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

Production and properties of bronze based cellular materials

International Nuclear Information System (INIS)

Strobl, S.; Danninger, H.

2001-01-01

For production of lightweight components, cellular materials offer attractive potential. Here, manufacturing of sintered bodies from bronze hollow spheres is described. The process starts with fabrication of hollow copper particles by cementation of Cu on iron particles. The still fragile Cu shells are consolidated by coating with Sn and subsequent gravity sintering. The resulting specimens exhibit a closed cell bronze structure with rather consistent morphology and cell wall thickness. The apparent density may range between 1.5 and 3.0 gcm -3 and can be controlled by variation of particle size and wall thickness. The mechanical behavior of the structures esp. during compressive loading is described and related to the microstructural parameters. (author)

The origin of local strain in highly epitaxial oxide thin films.

Science.gov (United States)

Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

2013-10-31

The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

OpenAIRE

Ruijin Hong; Jialin Ji; Chunxian Tao; Daohua Zhang; Dawei Zhang

2017-01-01

Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO) and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD), optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B ...

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Quesnel, David J. [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627 (United States)

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

Cathodic arc sputtering of functional titanium oxide thin films, demonstrating resistive switching

Energy Technology Data Exchange (ETDEWEB)

Shvets, Petr, E-mail: pshvets@innopark.kantiana.ru; Maksimova, Ksenia; Demin, Maxim; Dikaya, Olga; Goikhman, Alexander

2017-05-15

The formation of thin films of the different stable and metastable titanium oxide phases is demonstrated by cathode arc sputtering of a titanium target in an oxygen atmosphere. We also show that sputtering of titanium in vacuum yields the formation of titanium silicides on the silicon substrate. The crystal structure of the produced samples was investigated using Raman spectroscopy and X-ray diffraction. We conclude that cathode arc sputtering is a flexible method suitable for producing the functional films for electronic applications. The functionality is verified by the memory effect demonstration, based on the resistive switching in the titanium oxide thin film structure.

Ellipsometric investigations of pyrolytically deposited thin indium oxide films

International Nuclear Information System (INIS)

Winkler, U.

1980-01-01

Ellipsometric measurements have been carried out of thin indium oxide films deposited pyrolytically on glass substrates. It was found that the roughness of the films affected the measuring results. Therefore, only after applying a two-layer model a reasonable interpretation of the measuring results became possible

Crystal structure of red lead titanate thin films

International Nuclear Information System (INIS)

Bursill, L.A.; Peng, J.L.; Jiang, B.; Li, X.

1998-01-01

Orange-red lead titanate thin films are examined by high-resolution transmission electron microscopy and diffraction. It is remarkable that the structure is based on that of tetragonal-tungsten-bronze (TTB) rather than perovskite-type. The chemical basis for this result is examined. It is deduced that the TTB structure is stabilized by inclusion of hydroxyl ions during synthesis by a sol-gel route involving hydrolysis of n-Butyl titanate

Deposition and characterisation of epitaxial oxide thin films for SOFCs

KAUST Repository

Santiso, José ; Burriel, Mó nica

2010-01-01

This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Rodenbücher, C. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); Hildebrandt, E.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Alff, L. [Technische Universität Darmstadt, Institute of Materials Science, 64287 Darmstadt (Germany); Szot, K. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); University of Silesia, A. Chełkowski Institute of Physics, 40-007 Katowice (Poland); Breuer, U. [Forschungszentrum Jülich GmbH, Central Institute for Engineering, Electronics and Analytics (ZEA-3), 52425 Jülich (Germany); Waser, R. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); RWTH Aachen, Institute of Electronic Materials (IWE 2), 52056 Aachen (Germany)

2016-06-20

On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

Oxidation of Zr and thin (0.2-4 nm) Zr films on Ag: An ESCA investigation

International Nuclear Information System (INIS)

Steiner, P.; Sander, I.; Siegwart, B.; Huefner, S.

1987-01-01

The oxidation of polycrystalline Zr under 10 -8 -10 -3 mbar oxygen pressure in the temperature range 25 0 -350 0 C is obtained from ESCA experiments. Changes in the ESCA spectra for thin Zr films on Ag oxidized at 250 0 C are observed and compared to the bulk Zr-metal. Thin Ag overlayers on Zr show a catalytic increase of the room temperature oxidation of Zr. (orig.)

A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

Science.gov (United States)

Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

2013-03-01

Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

Clay Corner: Recreating Chinese Bronze Vessels.

Science.gov (United States)

Gamble, Harriet

1998-01-01

Presents a lesson where students make faux Chinese bronze vessels through slab or coil clay construction after they learn about the history, function, and design of these vessels. Utilizes a variety of glaze finishes in order to give the vessels an aged look. Gives detailed guidelines for creating the vessels. (CMK)

21 CFR 73.1646 - Bronze powder.

Science.gov (United States)

2010-04-01

... percent. Maximum particle size 45µ (95 percent minimum). Aluminum, zinc, tin, and copper content shall be based on the weight of the dried powder after being thoroughly washed with ether. (c) Uses and restrictions. Bronze powder may be safely used in color externally applied drugs, including those intended for...

Electrochemical Water Oxidation by a Catalyst-Modified Metal-Organic Framework Thin Film

Energy Technology Data Exchange (ETDEWEB)

Lin, Shaoyang; Pineda-Galvan, Yuliana; Maza, William A.; Epley, Charity C.; Zhu, Jie; Kessinger, Matthew C.; Pushkar, Yulia; Morris, Amanda J. (VP); (Purdue)

2016-12-15

Water oxidation, a key component in artificial photosynthesis, requires high overpotentials and exhibits slow reaction kinetics that necessitates the use of stable and efficient heterogeneous water-oxidation catalysts (WOCs). Here, we report the synthesis of UiO-67 metal–organic framework (MOF) thin films doped with [Ru(tpy)(dcbpy)OH2]2+ (tpy=2,2':6',2''-terpyridine, dcbpy=5,5'-dicarboxy-2,2'-bipyridine) on conducting surfaces and their propensity for electrochemical water oxidation. The electrocatalyst oxidized water with a turnover frequency (TOF) of (0.2±0.1) s-1 at 1.71 V versus the normal hydrogen electrode (NHE) in buffered solution (pH~7) and exhibited structural and electrochemical stability. The electroactive sites were distributed throughout the MOF thin film on the basis of scan-ratedependent voltammetry studies. This work demonstrates a promising way to immobilize large concentrations of electroactive WOCs into a highly robust MOF scaffold and paves the way for future photoelectrochemical water-splitting systems.

Lead isotope approach to the understanding of early Japanese bronze culture

International Nuclear Information System (INIS)

Mabuchi, H.; Hirao, Y.

1985-01-01

For several years, the authors have used lead isotope analysis to investigate extensively the provenance of ancient bronze or copper artifacts which had been excavated mainly from Japanese archaeological sites. The results have been published item by item in several relevant Japanese journals. This review is intended to give an account which will review the whole work relating early Japanese bronze culture to Chinese and Korean cultures through lead isotope study. (author)

TiFeCoNi oxide thin film - A new composition with extremely low electrical resistivity at room temperature

International Nuclear Information System (INIS)

Yang, Ya-Chu; Tsau, Chun-Huei; Yeh, Jien-Wei

2011-01-01

We show the electrical resistivity of a TiFeCoNi oxide thin film. The electrical resistivity of the TiFeCoNi thin film decreased sharply after a suitable period of oxidation at high temperature. The lowest resistivity of the TiFeCoNi oxide film was 35 ± 3 μΩ-cm. The low electrical resistivity of the TiFeCoNi oxide thin film was attributed to Ti, which is more reactive than the other elements, reacting with oxygen at the initial stage of annealing. The low resistivity is caused by the remaining electrons.

75 FR 57825 - Culturally Significant Objects Imported for Exhibition Determinations: “Ancient Chinese Bronzes...

Science.gov (United States)

2010-09-22

... DEPARTMENT OF STATE [Public Notice 7181] Culturally Significant Objects Imported for Exhibition Determinations: ``Ancient Chinese Bronzes From the Shouyang Studio: The Katherine and George Fan Collection... ``Ancient Chinese Bronzes from the Shouyang Studio: The Katherine and George Fan Collection,'' imported from...

The Microstructures and Electrical Resistivity of (Al, Cr, TiFeCoNiOx High-Entropy Alloy Oxide Thin Films

Directory of Open Access Journals (Sweden)

Chun-Huei Tsau

2015-01-01

Full Text Available The (Al, Cr, TiFeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOx films was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.

Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

Energy Technology Data Exchange (ETDEWEB)

Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

2016-12-15

Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

Investigations on dry sliding of laser cladded aluminum bronze

Directory of Open Access Journals (Sweden)

Freiße Hannes

2016-01-01

Full Text Available The aim of this study was to investigate the tribological behaviour of laser cladded aluminum bronze tool surfaces for dry metal forming. In a first part of this work a process window for cladding aluminum bronze on steel substrate was investigated to ensure a low dilution. Therefore, the cladding speed, the powder feed rate, the laser power and the distance between the process head and the substrate were varied. The target of the second part was to investigate the influence of different process parameters on the tribological behaviour of the cladded tracks. The laser claddings were carried out on both aluminum bronze and cold work tool steel as substrate materials. Two different particle sizes of the cladding powder material were used. The cladding speed was varied and a post-processing laser remelting treatment was applied. It is shown that the tribological behaviour of the surface in a dry oscillating ball-on-plate test is highly dependent on the substrate material. In the third part a deep drawing tool was additively manufactured by direct laser deposition. Furthermore, the tool was applied to form circular cups with and without lubrication.

Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

International Nuclear Information System (INIS)

Wadati, H.; Fujimori, A.

2013-01-01

Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

Studies of oxide-based thin-layered heterostructures by X-ray scattering methods

Energy Technology Data Exchange (ETDEWEB)

Durand, O. [Thales Research and Technology France, Route Departementale 128, F-91767 Palaiseau Cedex (France)]. E-mail: olivier.durand@thalesgroup.com; Rogers, D. [Nanovation SARL, 103 bis rue de Versailles 91400 Orsay (France); Universite de Technologie de Troyes, 10-12 rue Marie Curie, 10010 (France); Teherani, F. Hosseini [Nanovation SARL, 103 bis rue de Versailles 91400 Orsay (France); Andrieux, M. [LEMHE, ICMMOCNRS-UMR 8182, Universite d' Orsay, Batiment 410, 91410 Orsay (France); Modreanu, M. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland)

2007-06-04

Some X-ray scattering methods (X-ray reflectometry and Diffractometry) dedicated to the study of thin-layered heterostructures are presented with a particular focus, for practical purposes, on the description of fast, accurate and robust techniques. The use of X-ray scattering metrology as a routinely working non-destructive testing method, particularly by using procedures simplifying the data-evaluation, is emphasized. The model-independent Fourier-inversion method applied to a reflectivity curve allows a fast determination of the individual layer thicknesses. We demonstrate the capability of this method by reporting X-ray reflectometry study on multilayered oxide structures, even when the number of the layers constitutive of the stack is not known a-priori. Fast Fourier transform-based procedure has also been employed successfully on high resolution X-ray diffraction profiles. A study of the reliability of the integral-breadth methods in diffraction line-broadening analysis applied to thin layers, in order to determine coherent domain sizes, is also reported. Examples from studies of oxides-based thin-layers heterostructures will illustrate these methods. In particular, X-ray scattering studies performed on high-k HfO{sub 2} and SrZrO{sub 3} thin-layers, a (GaAs/AlOx) waveguide, and a ZnO thin-layer are reported.

Nanoscale reduction of graphene oxide thin films and its characterization

KAUST Repository

Lorenzoni, M.; Giugni, Andrea; Di Fabrizio, Enzo M.; Pé rez-Murano, Francesc; Mescola, A.; Torre, Bruno

2015-01-01

In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip

Indium Tin Oxide thin film gas sensors for detection of ethanol vapours

International Nuclear Information System (INIS)

Vaishnav, V.S.; Patel, P.D.; Patel, N.G.

2005-01-01

Indium Tin Oxide (ITO: In 2 O 3 + 17% SnO 2 ) thin films grown on alumina substrate at 648 K temperatures using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-2500 ppm). The operating temperature of the sensor was optimized. The sensitivity variation of films having different thickness was studied. The sensitivity of the films deposited on Si substrates was studied. The response of the film with MgO catalytic layer on sensitivity and selectivity was observed. A novel approach of depositing thin stimulating layer of various metals/oxides below the ITO film was tried and tested

Optimisation of chemical solution deposition of indium tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Sunde, Tor Olav Løveng; Einarsrud, Mari-Ann; Grande, Tor, E-mail: grande@ntnu.no

2014-12-31

An environmentally friendly aqueous sol–gel process has been optimised to deposit indium tin oxide (ITO) thin films, aiming to improve the film properties and reduce the deposition costs. It was demonstrated how parameters such as cation concentration and viscosity could be applied to modify the physical properties of the sol and thereby reduce the need for multiple coatings to yield films with sufficient conductivity. The conductivity of the thin films was enhanced by adjusting the heat treatment temperature and atmosphere. Both increasing the heat treatment temperature of the films from 530 to 800 °C and annealing in reducing atmosphere significantly improved the electrical conductivity, and conductivities close to the state of the art sputtered ITO films were obtained. A pronounced decreased conductivity was observed after exposing the thin films to air and the thermal reduction and ageing of the film was studied by in situ conductivity measurements. - Highlights: • Spin coating of indium tin oxide using an aqueous solution was optimised. • The conductivity was enhanced by thermal annealing in reducing atmosphere. • The conductivity of is comparable to the conductivity of sputtered films. • A relaxation process in the reduced thin film was observed after exposure in air.

Characterisation of Late Bronze Age large size shield nails by EDXRF, micro-EDXRF and X-ray digital radiography

International Nuclear Information System (INIS)

Figueiredo, E.; Araujo, M.F.; Silva, R.J.C.; Senna-Martinez, J.C.; Ines Vaz, J.L.

2011-01-01

In the present study six exceptional large size metallic nails, a dagger and a sickle from the Late Bronze Age archaeological site of Figueiredo das Donas (Central Portugal) have been analysed by EDXRF, micro-EDXRF and X-ray digital radiography for the study of material composition and technology of fabrication. The combination of these analytical and examination techniques showed that all artefacts are made of bronze with As, Sb and Pb impurities, and that the nails were most likely manufactured using the casting-on technique. These results reinforce the use of binary bronze by Late Bronze Age in the region, and the incorporation of new fabrication technologies that resulted from ancient spheres of interaction. - Highlights: → EDXRF, micro-EDXRF and X-ray digital radiography in cultural heritage studies. → Archaeometallurgical study of a Late Bronze Age artefact collection from Portugal. → Practise of a specific and traditional bronze metallurgy. → Appearance of technological innovations as the casting-on technique.

Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

Science.gov (United States)

Muslih, E. Y.; Kim, K. H.

2017-07-01

Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

ISOTOPES, PLANTS, AND RESERVOIR EFFECTS : CASE STUDY FROM THE CASPIAN STEPPE BRONZE AGE

NARCIS (Netherlands)

Shishlina, N.; Zazovskaya, E.; van der Plicht, J.; Sevastyanov, V.; Boaretto, E.; Rebollo Franco, N.R.

2012-01-01

Bronze Age human and animal bone collagen from several steppe Bronze Age cultures (i.e. Early Catacomb, East and West Manych Catacomb, and Lola cultures) shows large variations in delta C-13 and delta N-15 values. In general, we observed that the older the sample, the lower the delta C-13 and delta

A nanogravimmetric investigation of the charging processes on ruthenium oxide thin films and their effect on methanol oxidation

International Nuclear Information System (INIS)

Santos, M.C.; Cogo, L.; Tanimoto, S.T.; Calegaro, M.L.; Bulhoes, L.O.S

2006-01-01

The charging processes and methanol oxidation that occur during the oxidation-reduction cycles in a ruthenium oxide thin film electrode (deposited by the sol-gel method on Pt covered quartz crystals) were investigated by using cyclic voltammetry, chronoamperometry and electrochemical quartz crystal nanobalance techniques. The ruthenium oxide rutile phase structure was determined by X-ray diffraction analysis. The results obtained during the charging of rutile ruthenium oxide films indicate that in the anodic sweep the transition from Ru(II) to Ru(VI) occurs followed by proton de-intercalation. In the cathodic sweep, electron injection occurs followed by proton intercalation, leading to Ru(II). The proton intercalation/de-intercalation processes can be inferred from the mass/charge relationship which gives a slope close to 1 g mol -1 (multiplied by the Faraday constant) corresponding to the molar mass of hydrogen. From the chronoamperometric measurements, charge and mass saturation of the RuO 2 thin films was observed (440 ng cm -2 ) during the charging processes, which is related to the total number of active sites in these films. Using the electrochemical quartz crystal nanobalance technique to study the methanol oxidation reaction at these films was possible to demonstrate that bulk oxidation occurs without the formation of strongly adsorbed intermediates such as CO ads , demonstrating that Pt electrodes modified by ruthenium oxide particles can be promising catalysts for the methanol oxidation as already shown in the literature

Growth and surface characterization of sputter-deposited molybdenum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Ramana, Chintalapalle V.; Atuchin, Victor V.; Kesler, V. G.; Kochubey, V. A.; Pokrovsky, L. D.; Shutthanandan, V.; Becker, U.; Ewing, Rodney C.

2007-04-15

Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 *C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were nonstoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films.

Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

Directory of Open Access Journals (Sweden)

Ruijin Hong

2017-01-01

Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

Portable EDXRF investigation of the patinas on the Riace Bronzes

Energy Technology Data Exchange (ETDEWEB)

Buccolieri, Giovanni, E-mail: giovanni.buccolieri@unisalento.it [Università del Salento, Dipartimento di Matematica e Fisica, via Arnesano, 73100 Lecce (Italy); Buccolieri, Alessandro, E-mail: alessandro.buccolieri@unisalento.it [Università del Salento, Dipartimento di Scienze e Tecnologie Biologiche e Ambientali, via Monteroni, 73100 Lecce (Italy); Donati, Paola, E-mail: paola.donati@beniculturali.it [Istituto Superiore per la Conservazione e il Restauro, via di San Michele n. 23, 00153 Roma (Italy); Marabelli, Maurizio, E-mail: maurizio.marabelli@libero.it [Istituto Superiore per la Conservazione e il Restauro, via di San Michele n. 23, 00153 Roma (Italy); Castellano, Alfredo, E-mail: alfredo.castellano@unisalento.it [Università del Salento, Dipartimento di Matematica e Fisica, via Arnesano, 73100 Lecce (Italy)

2015-01-15

This paper summarizes the experimental results concerning the Energy Dispersive X-ray Fluorescence (EDXRF) analysis of patinas on two Riace Bronzes, kept in the National Archaeological Museum of Reggio Calabria (Calabria, Southern Italy). The two large Greek sculptures, famous nude bearded warriors both dated in the fifth century BC, are without a doubt, two masterpieces of inestimable historic and artistic value. EDXRF survey had the aim to determinate the chemical composition of the surface of these two bronze statues and to discriminate their different patinas. In particular, the concentration of sulphur, chlorine, tin, manganese, iron, copper, zinc and lead was determined by using a portable apparatus. Multivariate statistical analysis was carried out in order to identify possible correlations and/or differences of elemental composition among the patinas of these two statues. The information obtained made it possible to improve knowledge about the patinas of the Riace Bronzes, and this may help further studies and subsequent methods of restoration and/or of preservation of the two celebrated Greek sculptures.

Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors.

Science.gov (United States)

Xu, Wangying; Li, Hao; Xu, Jian-Bin; Wang, Lei

2018-03-06

Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This review surveys the recent advances in solution-based oxide TFTs, including n-type oxide semiconductors, oxide dielectrics and p-type oxide semiconductors. Firstly, we provide an introduction on oxide TFTs and the TFT configurations and operating principles. Secondly, we present the recent progress in solution-processed n-type transistors, with a special focus on low-temperature and large-area solution processed approaches as well as novel non-display applications. Thirdly, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-voltage electronics. Fourthly, we discuss the recent progress in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw the conclusions and outline the perspectives over the research field.

Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

KAUST Repository

Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

2015-01-01

High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

Localized and collectivized behaviour of d-electrons in complicated titanium, vanadium and niobium oxides

International Nuclear Information System (INIS)

Bazuev, G.V.; Shvejkin, G.P.

1980-01-01

On the basis of investigation of electric and magnetic properties of oxide compounds of transition metals made are the conclusions on the degree of localization and delocalization of d-electrons in them. Generalized are the investigation results of complicated titanium, vanadium, niobium oxide compounds in low degrees of oxidation with rare earth and alkaline earth elements belonging to the two structural types: perovskite and pyrochlore. Presented are the results of investigations of perovskite-like solid solutions and of variable-content phases containing cations of transition metals in two different oxidation degrees: oxide niobium bronzes of two-valent europium and titanium bronzes of rare-earth elements, as well as Lnsub(1-x)Msub(x)Vsub(1-x)sup(3+)Vsub(x)sup(4+)Osub(3), where M is an alkaline earth element

solution growth and characterization of copper oxide thin films ...

African Journals Online (AJOL)

Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

Development and characterization of ultra-thin dosemeters of aluminium oxide

International Nuclear Information System (INIS)

Villagran V, E.

2003-01-01

The aim of the present thesis work has been to investigate the thermoluminescent (Tl) response of aluminium oxide thin films with thicknesses of the order of 300 nm prepared by laser ablation. Aluminium oxide thin films show Tl response after they are subject to ultraviolet, beta and gamma radiation. The Tl curves exhibit peaks around 75 C and 169 C for UV radiation, 112 C and 180 C for beta particles and 110 C and 176 C for gamma radiation. In order to improve the Tl response some growth parameters such as power density and distance target-substrate were varied. The relation dose-response shows a non-linear behavior for UV irradiation; a linear behavior for beta-particles dose from 150 mGy to 50 Gy, and a linear behavior for gamma radiation dose from 5 Gy to 100 Gy. The kinetic Tl parameters were determined by Computerized Glow Curve Deconvolution (CGCD) method as well as using analytical methods. The CGCD results show that the high temperature peak is composed by four peaks with maximums in 165.7, 188.1, 215.3, 246.5 C. These obey a second order kinetics. The trap depth (E) values are 1.4, 1.6, 1.8 and 2.0 eV respectively. The different analytical results show a trap depth values of 0.914, 0.82 and 0.656 eV respectively. Oxide aluminium thin films obtained would be a suitable tool owing to their potential applications in clinical dosimetry, in the dose distributions due to weekly penetrating radiation determination, and in interfaces dosimetry. (Author)

Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

Directory of Open Access Journals (Sweden)

Gyu-bong Cho

2014-01-01

Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

Dating simple flakes: Early Bronze Age flake production technology on the Middle Euphrates Steppe, Syria

Directory of Open Access Journals (Sweden)

Yoshihiro Nishiaki

2014-03-01

Full Text Available Aceramic flint scatters, comprising very crude cores or flakes and no formalised tools, are frequently found on the Middle Euphrates steppe of northern Syria. Previous studies suggest that many of them are residues of short-term activities by the nomads or shepherds of the Early Bronze Age. In order to verify this interpretation, a more precise chronological framework needs to be established for the Early Bronze Age lithic industry. This paper analyses stratified flake assemblages of the Early Bronze Age at Tell Ghanem al-Ali, a securely radiocarbon-dated settlement on the Middle Euphrates, and examines which occupation level yields assemblages most similar to those of the steppe. Results demonstrate that the lithic industry of this period underwent significant diachronic changes in terms of core reduction technology. Based on the chronological framework developed at Tell Ghanem al-Ali, the steppe assemblages in question can be assigned to different phases of the Early Bronze Age. This finding will help identify processes at the beginning of the extensive exploitation of the steppe, which is regarded as one of the most important socioeconomic changes that occurred among Early Bronze Age communities of the Middle Euphrates.

Izumo and the East Asian Bronze Culture%出云与东亚的青铜文化

Institute of Scientific and Technical Information of China (English)

王巍

2003-01-01

The origin of bronzes in Yayoi Japan can be traced to their counterparts in Xia-Shang-Zhou China. It must have happened that ancient Chinese bronze weapons and small bells used aspractical implements were first spread into Japan through northeastern China and the Korean Peninsulaand then developed gradually into bronzes exclusively for sacrificial use. Among the bronzes unearthed inbatches from hoards in the Izumo area within the coastland of the Sea of Japan, the spearheads may havebeen made in the north of Kyushu, the small bells must have come from the Kinai region, and the over300 swords were probably local products. The repeated discovery of Yayoi bronze hoards in the Izumoarea suggests that this region was absolutely not an unpopulated land. On the contrary, as a very im-portant district, it should be fully affirmed to have played a considerable role in the development of an-cient Japanese history.

Tribaloy alloy reinforced tin-bronze composite coating for journal bearing applications

International Nuclear Information System (INIS)

Gao, F.; Liu, R.; Wu, X.J.

2011-01-01

This article presents an experimental study of the tribological behavior of a tin/bronze-based composite coating. The improved-ductility Tribaloy alloy (T-401) particles are selected as the reinforcement. This coating is made on the bushing of planet journals used in aerospace engines, deposited with the high velocity oxygen fuel (HVOF) thermal spray technique. The tribological properties such as friction and wear resistance of the coated bushing are investigated under the WAMsc3 Sliding Contact Test, along with the leaded tin/bronze bushing tested for comparison. The testing results show that the bushing coated with the composite exhibits superior tribological properties to the leaded tin/bronze bushing in that the former runs longer before the friction coefficient reaches 0.5 and also leads a to lower wear rate than the latter. The experimental results and wear mechanisms of these two bushings are discussed with the assistance of worn surface analyses using scanning electron microscopy (SEM).

Boiling heat transfer on single phosphor bronze and copper mesh microstructures

Directory of Open Access Journals (Sweden)

Orman Łukasz J.

2014-03-01

Full Text Available The paper presents experimental results of boiling heat transfer of distilled water and ethyl alcohol on surfaces covered with single layers of wire mesh structures made of phosphor bronze and copper. For each material two kinds of structures have been considered (higher and lower in order to determine the impact of the height of the structure on boiling heat transfer. The wire diameter of the copper meshes was 0,25 mm and 0,32 mm, while of the bronze meshes: 0,20 mm and 0,25 mm. The structures had the same mesh aperture (distance between the wires – 0,50 mm for copper and 0,40 for bronze but different wire diameter and, consequently, different height of the layers. The tests have been performed under ambient pressure in the pool boiling mode. The obtained results indicate a visible impact of the layer height on the boiling heat transfer performance of the analysed microstructures.

Raman and XPS characterization of vanadium oxide thin films with temperature

Energy Technology Data Exchange (ETDEWEB)

Ureña-Begara, Ferran, E-mail: ferran.urena@uclouvain.be [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium); Crunteanu, Aurelian [XLIM Research Institute, UMR 7252, CNRS/Université de Limoges, Limoges (France); Raskin, Jean-Pierre [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium)

2017-05-01

Highlights: • Comprehensive study of the oxidation of VO{sub 2} thin films from R.T. up to 550 °C. • Phase changes and mixed-valence vanadium oxides formed during the oxidation process. • Reported Raman and XPS signatures for each vanadium oxide. • Monitoring of the current and resistance evolution at the surface of the films. • Oxidation model describing the evolution of the vanadium oxides and phase changes. - Abstract: The oxidation mechanisms and the numerous phase transitions undergone by VO{sub 2} thin films deposited on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates when heated from room temperature (R.T.) up to 550 °C in air are investigated by Raman and X-ray photoelectron spectroscopy. The results show that the films undergo several intermediate phase transitions between the initial VO{sub 2} monoclinic phase at R.T. and the final V{sub 2}O{sub 5} phase at 550 °C. The information about these intermediate phase transitions is scarce and their identification is important since they are often found during the synthesis of vanadium dioxide films. Significant changes in the film conductivity have also been observed to occur associated to the phase transitions. In this work, current and resistance measurements performed on the surface of the films are implemented in parallel with the Raman measurements to correlate the different phases with the conductivity of the films. A model to explain the oxidation mechanisms and phenomena occurring during the oxidation of the films is proposed. Peak frequencies, full-width half-maxima, binding energies and oxidation states from the Raman and X-ray photoelectron spectroscopy experiments are reported and analyzed for all the phases encountered in VO{sub 2} films prepared on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates.

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

KAUST Repository

Nayak, Pradipta K.

2013-07-18

We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

KAUST Repository

Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

2013-01-01

We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

Optical characterisation of thin film cadmium oxide prepared by a ...

African Journals Online (AJOL)

The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

International Nuclear Information System (INIS)

Panky, Sreedevi; Thandavan, Kavitha; Sivalingam, Durgajanani; Sethuraman, Swaminathan; Krishnan, Uma Maheswari; Jeyaprakash, Beri Gopalakrishnan; Rayappan, John Bosco Balaguru

2013-01-01

Nanostructured cerium oxide (CeO 2 ) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO 3 ) 3 ·6H 2 O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO 2 and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film to form the lipase/nano-CeO 2 /TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO 2 /TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film and hence the lipase/nano-CeO 2 /TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6

Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

International Nuclear Information System (INIS)

Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

2013-01-01

Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

International Nuclear Information System (INIS)

Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei Wei; Jin Chunming; Narayan, Roger J.

2009-01-01

The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

International Nuclear Information System (INIS)

Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

Influence of Metal-Coated Graphite Powders on Microstructure and Properties of the Bronze-Matrix/Graphite Composites

Science.gov (United States)

Zhao, Jian-hua; Li, Pu; Tang, Qi; Zhang, Yan-qing; He, Jian-sheng; He, Ke

2017-02-01

In this study, the bronze-matrix/x-graphite (x = 0, 1, 3 and 5%) composites were fabricated by powder metallurgy route by using Cu-coated graphite, Ni-coated graphite and pure graphite, respectively. The microstructure, mechanical properties and corrosive behaviors of bronze/Cu-coated-graphite (BCG), bronze/Ni-coated-graphite (BNG) and bronze/pure-graphite (BPG) were characterized and investigated. Results show that the Cu-coated and Ni-coated graphite could definitely increase the bonding quality between the bronze matrix and graphite. In general, with the increase in graphite content in bronze-matrix/graphite composites, the friction coefficients, ultimate density and wear rates of BPG, BCG and BNG composites all went down. However, the Vickers microhardness of the BNG composite would increase as the graphite content increased, which was contrary to the BPG and BCG composites. When the graphite content was 3%, the friction coefficient of BNG composite was more stable than that of BCG and BPG composites, indicating that BNG composite had a better tribological performance than the others. Under all the values of applied loads (10, 20, 40 and 60N), the BCG and BNG composites exhibited a lower wear rate than BPG composite. What is more, the existence of nickel in graphite powders could effectively improve the corrosion resistance of the BNG composite.

Ferroelectric thin films using oxides as raw materials

Directory of Open Access Journals (Sweden)

E.B. Araújo

1999-01-01

Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

Science.gov (United States)

Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

2018-05-01

The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

International Nuclear Information System (INIS)

Pedrero, E.; Vigil, E.; Zumeta, I.

1999-01-01

The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

Oriented growth of thin films of samarium oxide by MOCVD

Indian Academy of Sciences (India)

Unknown

Very thin layers of rare earth oxides, such as Sm2O3 and epitaxial Gd2O3, grown by thermal ... As the inorganic salts of the lanthanides, such as their halides, are ... sodium hydroxide, followed by the addition of ethanolic. 1,10-phenanthroline ...

Magnetic susceptibility of the rare earth tungsten oxide bronzes of the defected perovskite-type structure (Rsub(x)WO/sub 3/)

Energy Technology Data Exchange (ETDEWEB)

Gesicki, A; Polaczek, A [Warsaw Univ. (Poland)

1975-01-01

Magnetic susceptibility of rare earth tungsten bronzes Rsub(x)WO/sub 3/ of cubic symmetry was measured in the 80-293 K range with the Gouy method. In disagreement with the data reported by other authors it was stated that the Curie-Weiss law with negative Weiss parameter was fulfilled in each case. Possible coupling mechanisms are briefly discussed.

Crystal structure of red lead titanate thin films

Energy Technology Data Exchange (ETDEWEB)

Bursill, L.A.; Peng, J.L.; Jiang, B. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Li, X. [Jilin Univ., Changchun, JL (China). Dept of Chemistry

1998-09-01

Orange-red lead titanate thin films are examined by high-resolution transmission electron microscopy and diffraction. It is remarkable that the structure is based on that of tetragonal-tungsten-bronze (TTB) rather than perovskite-type. The chemical basis for this result is examined. It is deduced that the TTB structure is stabilized by inclusion of hydroxyl ions during synthesis by a sol-gel route involving hydrolysis of n-Butyl titanate 7 refs., 1 tab., 4 figs.

Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

Directory of Open Access Journals (Sweden)

Mihaela Girtan

2017-05-01

Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Denny, Yus Rama [Department of Physics Education, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Firmansyah, Teguh [Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Yang, Dong-Seok [Department of Physics Education, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 16678 (Korea, Republic of)

2016-10-15

Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

Study on surface properties of gilt-bronze artifacts, after Nd:YAG laser cleaning

Energy Technology Data Exchange (ETDEWEB)

Lee, Hyeyoun [Division of Restoration Technology, National Research Institute of Cultural Heritage, Daejeon (Korea, Republic of); Cho, Namchul, E-mail: nam1611@hanmail.net [Department of Cultural Heritage Conservation Science, Kongju National University, Gongju, 314-701 (Korea, Republic of); Lee, Jongmyoung [Laser Engineering Group, IMT Co. Ltd, Gyeonggi (Korea, Republic of)

2013-11-01

As numerous pores are formed at plating gilt-bronze artifacts, the metal underlying the gold is corroded and corrosion products are formed on layer of gold. Through this study, the surfaces of gilt-bronze are being investigated before and after the laser irradiation to remove corrosion products of copper by using Nd:YAG laser. For gilt-bronze specimens, laser and chemical cleaning were performed, and thereafter, surface analysis with SEM-EDS, AFM, and XPS were used to determine the surface characteristics. Experimental results show that chemical cleaning removes corrosion products of copper through dissolution but it was not removed uniformly and separated the metal substrate and the gold layer. Nevertheless, through laser cleaning, some of the corrosions were removed with some damaged areas due to certain conditions and brown residues remained. Brown residues were copper corrosion products mixed with soil left within the gilt layer. It was due to surface morphology of uneven and rough gilt layer. Hence, they did not react effectively to laser beams, and thus, remained as residues. The surface properties of gilt-bronze should be thoroughly investigated with various surface analyses to succeed in laser cleaning without damages or residues.

Thin-film method-XRF determination of the composition of rare earth oxides

International Nuclear Information System (INIS)

Xiao Deming

1992-01-01

The author describes the thin-film sample preparation by precipitation-pumping filtering method and the composition of rare earth oxide materials by XRF determination. The determination limits are 0.01% to 0.17%. The coefficients of variation are in the range of 0.85% to 14.9%. The analytical results of several kinds of rare earth oxide materials show that this method can be applied to the determination of the composition of rare earth oxide mixtures

Comprehensive review on the development of high mobility in oxide thin film transistors

Science.gov (United States)

Choi, Jun Young; Lee, Sang Yeol

2017-11-01

Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display (FPD), active matrix organic light emitting display (AMOLED) and active matrix liquid crystal display (AMLCD) due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing (S.S) and threshold voltage ( V th ). Covalent semiconductor like amorphous silicon (a-Si) is attributed to the anti-bonding and bonding states of Si hybridized orbitals. However, AOSs have not grain boundary and excellent performances originated from the unique characteristics of AOS which is the direct orbital overlap between s orbitals of neighboring metal cations. High mobility oxide TFTs have gained attractive attention during the last few years and today in display industries. It is progressively developed to increase the mobility either by exploring various oxide semiconductors or by adopting new TFT structures. Mobility of oxide thin film transistor has been rapidly increased from single digit to higher than 100 cm2/V·s in a decade. In this review, we discuss on the comprehensive review on the mobility of oxide TFTs in a decade and propose bandgap engineering and novel structure to enhance the electrical characteristics of oxide TFTs.

Growth and surface characterization of sputter-deposited molybdenum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Ramana, C.V. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)]. E-mail: ramanacv@umich.edu; Atuchin, V.V. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kochubey, V.A. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Pokrovsky, L.D. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Shutthanandan, V. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Becker, U. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Ewing, R.C. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)

2007-04-15

Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (T {sub s}) and oxygen partial pressure (pO{sub 2}). The effect of T {sub s} and pO{sub 2} on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of T {sub s} and pO{sub 2} on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 deg. C under 62.3% O{sub 2} pressure were stoichiometric and polycrystalline MoO{sub 3}. Films grown at lower pO{sub 2} were non-stoichiometric MoO {sub x} films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO{sub 3} films.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

Science.gov (United States)

Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

2016-02-01

Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

Cloth cultures in prehistoric Europe: the Bronze Age evidence from Hallstatt

Directory of Open Access Journals (Sweden)

Susanna Harris

2009-09-01

Full Text Available Cloth Cultures in Prehistoric Europe is a Postdoctoral Fellowship project awarded to Susanna Harris by the British Academy. Its aim is to bring together and examine evidence for textiles and animal skins in prehistoric Europe from the Neolithic and Bronze Age. Several case studies are being examined as part of this project, including the Bronze Age Hallstatt salt mines. Here researchers working on the materials from Hallstatt look at some of the similarities and differences between the techniques applied to textiles and animal skins in their production and use in the mines.

Glycerol oxidehydration into acrolein and acrylic acid over W/V/Nb bronzes with hexagonal structure

Energy Technology Data Exchange (ETDEWEB)

Basile, F.; Cavani, F.; Chieregato, A. [Bologna Univ. (Italy). Dipt. di Chimica Industriale e dei Materiali; CIRI Energia e Ambiente, Bologna (Italy); Concepcion, P.; Lopez Nieto, J.M.; Soriano, M.D. [Univ. Politecnica de Valencia (Spain). Inst. de Tecnologia Quimica; Liosi, G.; Trevisanut, C. [Bologna Univ. (Italy). Dipt. di Chimica Industriale e dei Materiali

2012-07-01

This paper deals with an investigation of hexagonal W-V-Nb-O and W-V-Mo-O bronzes as catalysts for the one-pot oxidehydration of glycerol into acrylic acid. In a previous work, we reported a study on a bi-component bronze W-V-O that allowed us to obtain a 25% acrylic acid selectivity; in the current work, the incorporation of either Nb or Mo in a tri-component bronze structure allowed us to tune the acid and redox properties of the catalyst, so as to study their influence on the overall reaction scheme. (orig.)

Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film

International Nuclear Information System (INIS)

Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay

2007-01-01

Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) ∼2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization

The effect of Mg dopants on magnetic and structural properties of iron oxide and zinc ferrite thin films

Science.gov (United States)

Saritaş, Sevda; Ceviz Sakar, Betul; Kundakci, Mutlu; Yildirim, Muhammet

2018-06-01

Iron oxide thin films have been obtained significant interest as a material that put forwards applications in photovoltaics, gas sensors, biosensors, optoelectronic and especially in spintronics. Iron oxide is one of the considerable interest due to its chemical and thermal stability. Metallic ion dopant influenced superexchange interactions and thus changed the structural, electrical and magnetic properties of the thin film. Mg dopped zinc ferrite (Mg:ZnxFe3-xO4) crystal was used to avoid the damage of Fe3O4 (magnetite) crystal instead of Zn2+ in this study. Because the radius of the Mg2+ ion in the A-site (tetrahedral) is almost equal to that of the replaced Fe3+ ion. Inverse-spinel structure in which oxygen ions (O2-) are arranged to form a face-centered cubic (FCC) lattice where there are two kinds of sublattices, namely, A-site and B-site (octahedral) interstitial sites and in which the super exchange interactions occur. In this study, to increase the saturation of magnetization (Ms) value for iron oxide, inverse-spinal ferrite materials have been prepared, in which the iron oxide was doped by multifarious divalent metallic elements including Zn and Mg. Triple and quaternary; iron oxide and zinc ferrite thin films with Mg metal dopants were grown by using Spray Pyrolysis (SP) technique. The structural, electrical and magnetic properties of Mg dopped iron oxide (Fe2O3) and zinc ferrite (ZnxFe3-xO4) thin films have been investigated. Vibrating Sample Magnetometer (VSM) technique was used to study for the magnetic properties. As a result, we can say that Mg dopped iron oxide thin film has huge diamagnetic and of Mg dopped zinc ferrite thin film has paramagnetic property at bigger magnetic field.

Bronze railing from Mediana

Directory of Open Access Journals (Sweden)

Vasić Miloje R.

2003-01-01

Full Text Available The hoard containing components of bronze railing was discovered in trench 7 during excavations at Mediana in 2000. Railing consists of cancelli and herms with busts of deities between them. Railing was constructed in such a way that it was possible to disassemble and reassemble it. Three cancelli one fragmented semicancellus cast together with herm and herms, one with bust of Aesculapius and other with bust of Luna. It could be concluded that railing consisted of two segments with passage between them. Male deities were represented on the left segment of the railing and female deities on the right segment. Detailed analysis revealed that Aesculapius as well as Luna bear strong mark of classical Greek and Hellenistic art, which experienced some kind of renaissance in the time of Constantine I. It is very probable that we can recognize the portrait of Faustina, Constantine’s wife in the portrait of Luna. According to the historical events the railing could have been produced before 325 AD when Constantine definitively accepted Christianity at Council of Nicaea. It is difficult to say where the railing had been produced. It had been most probably brought to Mediana during the stay of emperor Julian in Niš in 361. The sculptures found in one room of the villa with peristyle had probably been brought at the same time. The apse of triclinium of this villa had most likely been arranged as small shrine with bronze railing at its entrance. The railing was buried in 378 after battle of Adrianople and invasion of Goths in diocese Dacia.

Electrodeposited nanocrystalline bronze alloys as replacement for Ni

NARCIS (Netherlands)

Hovestad, A.; Tacken, R.A.; Mannetje, H.H.'t

2008-01-01

Nanocrystalline white-bronze, CuSn, electroplating was investigated as alternative to Ni plating as undercoat for noble metals in jewellery applications. A strongly acidic plating bath was developed with an organic additive to suppress hydrogen evolution and obtain bright coatings. Polarization

Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

International Nuclear Information System (INIS)

Busch, C.; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R.

2012-01-01

The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO x , and indium oxide, In 2 O 3 . The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10 −6 cm 2V−1s−1 , the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

Properties of Spray Pyrolysied Copper Oxide Thin Films

Directory of Open Access Journals (Sweden)

S. S. Roy

2017-02-01

Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

Study of wear mechanism of chopped fiber reinforced epoxy composite filled with graphite and bronze

Science.gov (United States)

Patil, Nitinchand; Prasad, Krishna

2018-04-01

The combined effect of graphite and sintered bronze with a short glass fiber reinforced epoxy composites was investigated in this work. A pin on disc wear test was carried out to study the wear behaviour and mechanism of the composites. The objective of this work is to develop an alternate friction resistance material for the application of sliding bearing. It was observed that the addition of sintered bronze improved mechanical and thermal stability of the composites as bronze has low contact resistance with graphite and has high thermal conductivity. It was observed from the test results that increased volume percentage of graphite and presence of bronze are play significant role in wear mechanism of the composites. It was observed from the scanning electronic microscopes (SEM) that the abrasive and adhesive wear mechanism was prominent in this study. It was also evident from the result that the frictional force remains stable irrespective of the applied normal load.

Effect of Annealing on Tungsten Oxide Thin Films for Acetone Gas ...

Indian Academy of Sciences (India)

11

Abstract: The gas sensing properties and topology of tungsten oxide thin films ..... Figure 3: Atomic force microscopy images of sensing film for (a) as-deposited (a) .... the surface, it forms compounds with the oxygen ions species present on the ...

Haute Couture in the Bronze Age: A History of Minoan Female Costumes from Thera

DEFF Research Database (Denmark)

Nosch, Marie-Louise Bech

2008-01-01

Haute Couture in the Bronze Age from Thera is investigated via frescoes and with a historiographical approach on the reception of Minoan culture in contemporary Greek history......Haute Couture in the Bronze Age from Thera is investigated via frescoes and with a historiographical approach on the reception of Minoan culture in contemporary Greek history...

Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

Science.gov (United States)

Sathisha, D.; Naik, K. Gopalakrishna

2018-05-01

Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

Science.gov (United States)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

Energy Technology Data Exchange (ETDEWEB)

Panky, Sreedevi; Thandavan, Kavitha [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sivalingam, Durgajanani [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sethuraman, Swaminathan; Krishnan, Uma Maheswari [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Jeyaprakash, Beri Gopalakrishnan [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India)

2013-01-15

Nanostructured cerium oxide (CeO{sub 2}) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO{sub 2} and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film to form the lipase/nano-CeO{sub 2}/TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO{sub 2}/TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film and hence the lipase/nano-CeO{sub 2}/TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp

Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

International Nuclear Information System (INIS)

Pichon, L; Rogel, R; Demami, F

2010-01-01

We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

International Nuclear Information System (INIS)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

2012-01-01

Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

75 FR 15764 - Culturally Significant Objects Imported for Exhibition Determinations: “Gods of Angkor: Bronzes...

Science.gov (United States)

2010-03-30

... Determinations: ``Gods of Angkor: Bronzes From the National Museum of Cambodia'' SUMMARY: Notice is hereby given... objects to be included in the exhibition ``Gods of Angkor: Bronzes from the National Museum of Cambodia,'' imported from abroad for temporary exhibition within the United States, are of cultural significance. The...

Understanding metal–insulator transition in sodium tungsten bronze

Indian Academy of Sciences (India)

2015-05-20

May 20, 2015 ... We have carried out angle-resolved photoemission spectroscopy (ARPES) and spectromicroscopy studies to understand the metal–insulator transition (MIT) observed in sodium tungsten bronzes, NaWO3. The experimentally determined band structure is compared with the theoretical calculation based ...

Electronic properties of thermally formed thin iron oxide films

International Nuclear Information System (INIS)

Wielant, J.; Goossens, V.; Hausbrand, R.; Terryn, H.

2007-01-01

The oxide layer, present between an organic coating and the substrate, guarantees adhesion of the coating and plays a determinating role in the delamination rate of the organic coating. The purpose of this study is to compare the resistive and semiconducting properties of thermal oxides formed on steel in two different atmospheres at 250 deg. C: an oxygen rich atmosphere, air, and an oxygen deficient atmosphere, N 2 . In N 2 , a magnetite layer grows while in air a duplex oxide film forms composed by an inner magnetite layer and a thin outer hematite scale. The heat treatment for different amounts of time at high temperature was used as method to sample the thickness variation and change in electronic and semiconducting properties of the thermal oxide layers. Firstly, linear voltammetric measurements were performed to have a first insight in the electrochemical behavior of the thermal oxides in a borate buffer solution. Electrochemical impedance spectroscopy in the same buffer combined with the Mott-Schottky analysis were used to determine the semiconducting properties of the thermal oxides. By spectroscopic ellipsometry (SE) and atomic force microscopy (AFM), respectively, the thickness and roughness of the oxide layers were determined supporting the physical interpretation of the voltammetric and EIS data. These measurements clearly showed that oxide layers with different constitution, oxide resistance, flatband potential and doping concentration can be grown by changing the atmosphere

Comparative Investigations on the Stress Corrosion Behavior of α -Al Bronze and α Brass in Sodium Nitrite

International Nuclear Information System (INIS)

Ashour, E.A.

1995-01-01

The stress corrosion behavior of α- Aluminum bronze (copper [Cu] -7% Al) (UNS C 61400) has been investigated as compared to α- brass under slow strain in sodium nitrite solutions under open - circuit and different anodic potentials. While α- brass was quite susceptible to SCC, α- Al bronze was found to be resistant to SCC. The ratios of time to failure in solution to that in air and of maximum stress in solution to that in air decreased sharply with increase of anodic potential for α-brass but remained virtually constant for α- Al bronze. The mode of failure was predominantly ductile for α- Al bronze under various conditions. The stress corrosion cracking of α - brass has been shown to be promoted by relatively concentrated Na N O 2 and high anodic potentials. Previous explanations for the change of the mode of failure from intergranular at open circuit potential (OCP) to transgranular cracking under anodic potential were confirmed. The bronzes resistance to SCC was attributed to the presence of Al 2 O 3 on the alloy surface. 10 Figs

Differential reflectometry of thin film metal oxides on copper, tungsten, molybdenum and chromium

International Nuclear Information System (INIS)

Urban, F.K. III; Hummel, R.E.; Verink, E.D. Jr.

1982-01-01

A differential reflectometry study was undertaken to investigate the characteristics of thin oxide films on metal substrates. The oxides were produced by heating pure metals of copper, tungsten, molybdenum and chromium in dry oxygen. A new 'halfpolishing' technique was applied to obtain specimens with a step in oxide thickness in order to make them suitable for differential reflectometry. It was found that oxides formed this way yielded the same differential reflectograms as by electrochemical oxidation. A mathematical model involving the interaction of light with a thin corrosion product on metal substrates was applied to generate computer calculated differential reflectograms utilizing various optical constants and thicknesses of the assumed film. Three different thickness ranges have been identified. (a) For large film thicknesses, the differential reflectograms are distinguished by a sequence of interference peaks. (b) If the product of thickness and refraction index of the films is smaller than about 40 nm, no interference peaks are present. Any experimentally observed peaks in differential reflectograms of these films are caused entirely by electron interband transitions. (c) In an intermediate thickness range, superposition of interference and interband peaks are observed. (author)

Indium oxide thin film based ammonia gas and ethanol vapour sensor

Indian Academy of Sciences (India)

Unknown

acetone and dried under an electric lamp (100 W). Thin films of indium oxide ... A λ-19, UV–VIS Spectrophotometer (Perkin Elmer, USA) was used for measuring .... tion of ammonia is observed through glowing of LED. LM3914, LED driver is ...

Production of multifilamentary Nb3Sn composites incorporating a high tin bronze

International Nuclear Information System (INIS)

Petrovich, A.; Zeithlin, B.A.; Walker, M.S.

1977-01-01

The economics and processing methods have been examined for the fabrication of multifilamentary Nb 3 Sn using a high tin bronze reactive matrix. Four conductor configurations utilizing the high tin bronze were compared with a conventional Cu-13 wt % Sn bronze. The most promising of these designs is potentially 40% lower in cost per ampere meter than the conventional composite. Large hydrostatic extrusion facilities, which are required for the high tin processing, are not presently available in this country but can be made by conversion of conventional presses. They exist in Europe. Experiments were conducted to investigate the applicability of hydrostatic extrusion, and billet components were successfully prepared using the hydrostatic extrusion technique. We have concluded that the economics, availability of facilities and initial fabrication results are favorable for this type of conductor and that the next stage in this program of scale up to extrusion and drawing of 2'' to 3'' diameter composite billets should be undertaken

Determination of concentrations of minor and micro elements in ancient bronze drums artifacts samples by KO-standardization method of neutron activation analysis

International Nuclear Information System (INIS)

Nguyen Tac Anh; Ho Manh Dung; Diep Dinh Hoa; Cao Dong Vu

2000-01-01

The study aims to get a lot information about manufacturers of ancient bronze artifacts and ancient civilization. By KO-standardization method of neutron activation analysis developed in the Nuclear Research Institute, the concentrations of Au, Ag, As, Zn, Sb, Sn elements in ancient bronze alloy samples of 99 bronze artifacts from many excavated archaeological sites at the provinces in Vietnam were determined with uncertainties about ±10%. These elemental concentrations have been utilized in a statistical analysis procedure in order to determine similarities and correlation between the various samples. Th abnormal high of concentrations of noble metals as Au, Ag in ancient bronze indicates that the ancient metallurgists had been interested in role of these metals on sound quality of bronze artifacts. Especially, the concentrations of As in many samples are very high even at about 10%. This gives an evidence that in ancient time the humankind could use bronze As alloy in order to improve quality when they had produced bronze artifacts. (author)

Charge-density-wave partial gap opening in quasi-2D KMo 6O 17 purple bronze studied by angle resolved photoemission spectroscopy

Science.gov (United States)

Valbuena, M. A.; Avila, J.; Pantin, V.; Drouard, S.; Guyot, H.; Asensio, M. C.

2006-05-01

Low dimensional (LD) metallic oxides have been a subject of continuous interest in the last two decades, mainly due to the electronic instabilities that they present at low temperatures. In particular, charge density waves (CDW) instabilities associated with a strong electron-phonon interaction have been found in Molybdenum metallic oxides such as KMo 6O 17 purple bronze. We report an angle resolved photoemission (ARPES) study from room temperature (RT) to T ˜40 K well below the Peierls transition temperature for this material, with CDW transition temperature TCDW ˜120 K. We have focused on photoemission spectra along ΓM high symmetry direction as well as photoemission measurements were taken as a function of temperature at one representative kF point in the Brillouin zone in order to look for the characteristic gap opening after the phase transition. We found out a pseudogap opening and a decrease in the density of states near the Fermi energy, EF, consistent with the partial removal of the nested portions of the Fermi surface (FS) at temperature below the CDW transition. In order to elucidate possible Fermi liquid (FL) or non-Fermi liquid (NFL) behaviour we have compared the ARPES data with that one reported on quasi-1D K 0.3MoO 3 blue bronze.

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

International Nuclear Information System (INIS)

Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

2012-01-01

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

DEGRADATION WORKS OF MONUMENTAL ART CAST BRONZE UNDER THE INFLUENCE OF ENVIRONMENTAL FACTORS

Directory of Open Access Journals (Sweden)

Delia NICA-BADEA

2012-11-01

Full Text Available Intensive pollution, combined with the lack of conservation of monuments exposed to these environments make the main cause of deterioration of cultural objects to atmospheric corrosion metal. This paper proposes a study of the main factors leading to degradation Bronze alloy, cast bronze monuments exposed to open atmosphere: corrosive environmental factors, stability and products of corrosion of bronze. In general, all corrosion products present on a metal surface are indicated as 'skate', can be composed of single-layer or multilayer products. The paper also includes a case study on the influence of environmental factors on degradation Matthias monument statue in Cluj-Napoca, Romania. Visual inspection of the monument informs us that have white spots, gray, reddish not consistent with the base color green patina, surfaces showing depigmentation, the rain washed areas, crystallization, deposition of air-borne particles.

Elemental analysis of ancient Chinese bronze artifacts with external-beam PIXE

International Nuclear Information System (INIS)

Lin, E.K.; Yu, Y.C.; Wang, C.W.; Shen, C.T.; Huang, Y.M.; Wu, S.C.; Hsieh, C.H.

1992-01-01

External-beam PIXE has been applied for the determination of the elemental composition of ancient Chinese bronze artifacts. Characteristic x-ray spectra from the samples bombarded with protons of 3 MeV have been measured with a HPGe detector. At each sample three spots were irradiated per run. Results of measurements on three fragments of bronze drinking vessels and helmet of Chinese ancient Chou and Shang dynasties (17th-8th century B.C.) are presented. To check the analytical method, we have also made measurements on the elemental composition of some modern coins. The results are discussed. (author)

Learners’ Mistakes or Professional Error – the Nordic Bronze Age ornaments

DEFF Research Database (Denmark)

Nørgaard, Heide Wrobel

Nordic Bronze Age ornaments are known for their rich decorations, often consisting of spiral bands used as part of a variety of other decorative elements. Even a cursory examination makes it clear that these ornaments vary greatly in terms of their quality. How can this variation be explained......? Is this the result of different workshops, levels of crafting skills or perhaps even the incorporation of novice metalworkers? As part of a study on craft organization in the Nordic Bronze Age, several metal workshops were analyzed in relation to the skill of the craftsmen and the amount of time involved...

Elemental analysis of ancient Chinese bronze artifacts with external-beam PIXE

Energy Technology Data Exchange (ETDEWEB)

Lin, E.K.; Yu, Y.C.; Wang, C.W.; Shen, C.T.; Huang, Y.M.; Wu, S.C.; Hsieh, C.H. [Academia Sinica, Taipei, TW (China). Inst. of Physics

1992-12-31

External-beam PIXE has been applied for the determination of the elemental composition of ancient Chinese bronze artifacts. Characteristic x-ray spectra from the samples bombarded with protons of 3 MeV have been measured with a HPGe detector. At each sample three spots were irradiated per run. Results of measurements on three fragments of bronze drinking vessels and helmet of Chinese ancient Chou and Shang dynasties (17th-8th century B.C.) are presented. To check the analytical method, we have also made measurements on the elemental composition of some modern coins. The results are discussed. (author).

Ion beam analysis of PECVD silicon oxide thin films

International Nuclear Information System (INIS)

Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

2006-01-01

A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Directory of Open Access Journals (Sweden)

Jingyu Shen

2018-01-01

Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

Provenance study of a Bronze Age sword from Giurgiu

International Nuclear Information System (INIS)

Olariu, Agata; Badica, T.; Popescu, I. V.; Alexandrescu, E.

2000-01-01

This work is a compositional study of a bronze sword recently discovered near Giurgiu using the method of charged particles induced X ray emission (PIXE). The sword is of it Reutlingen type dated in the period Bronze Age D - Hallstatt A1, around 1200 B. C. The knowledge of its composition could give supplementary information about the provenance of this sword by comparing with other copper-based alloy objects from Bronze Age. To obtain the composition of the sword we have applied the method PIXE at the Tandem accelerator of IFIN-HH Magurele. We have extracted 3 samples from the body of the sword: one sample from the tip of the sword and 2 samples from the hilt. The samples have been flattened by a hammer and introduced in the irradiation chamber of the PIXE spectrometer. The targets have been irradiated by a current of protons of 3 MeV and about 5 nA from the linear accelerator Tandem of the department. The detection of the characteristic X ray emission have been done by a GeHP detector. The acquisition of the X ray spectra has been done online on a PC with a MCA interface Canberra. The detection system gave a 190 eV resolution at 5.9 keV. In the frame of the experimental conditions the following elements have been observed: As, Co, Cr, Cu, Fe, Ni, Pb, Sn and Zn. In the table we present the results of the PIXE analysis of the Bronze Age sword from Giurgiu. The instrumentation errors have been less than 15%. The values of the elemental concentrations have been normalized to 100%. In order to have a comparative study of composition we considered also the composition of 7 swords of the same type and from the same period from regions from the south of Danube in Bulgaria, and 6 copper-based alloy objects from Spalnaca deposit, in Transylvania, dated also Bronze Age. The sword from Giurgiu has a composition closer to the Bulgarian swords for the elements: As, Co, Cu, Ni, Sn. The ratios Sn/Cu versus As/Cu for the sword from Giurgiu, Spalnaca-Transylvania objects and

Relationships among surface processing at the nanometer scale, nanostructure and optical properties of thin oxide films

Energy Technology Data Exchange (ETDEWEB)

Losurdo, Maria

2004-05-01

Spectroscopic ellipsometry is used to study the optical properties of nanostructured semiconductor oxide thin films. Various examples of models for the dielectric function, based on Lorentzian oscillators combined with the Drude model, are given based on the band structure of the analyzed oxide. With this approach, the optical properties of thin films are determined independent of the dielectric functions of the corresponding bulk materials, and correlation between the optical properties and nanostructure of thin films is investigated. In particular, in order to discuss the dependence of optical constants on grain size, CeO{sub 2} nanostructured films are considered and parameterized by two-Lorentzian oscillators or two-Tauc-Lorentz model depending on the nanostructure and oxygen deficiency. The correlation among anisotropy, crystalline fraction and optical properties parameterized by a four-Lorentz oscillator model is discussed for nanocrystalline V{sub 2}O{sub 5} thin films. Indium tin oxide thin films are discussed as an example of the presence of graded optical properties related to interfacial reactivity activated by processing conditions. Finally, the example of ZnO shows the potential of ellipsometry in discerning crystal and epitaxial film polarity through the analysis of spectra and the detection of surface reactivity of the two polar faces, i.e. Zn-polarity and O-polarity.

Quantitative multiphase analysis of archaeological bronzes by neutron diffraction

CERN Document Server

Siano, S; Celli, M; Pini, R; Salimbeni, R; Zoppi, M; Kockelmann, W A; Iozzo, M; Miccio, M; Moze, O

2002-01-01

In this paper, we report the first investigation on the potentials of neutron diffraction to characterize archaeological bronze artifacts. The preliminary feasibility of phase and structural analysis was demonstrated on standardised specimens with a typical bronze alloy composition. These were realised through different hardening and annealing cycles, simulating possible ancient working techniques. The Bragg peak widths that resulted were strictly dependent on the working treatment, thus providing an important analytical element to investigate ancient making techniques. The diagnostic criteria developed on the standardised specimens were then applied to study two Etruscan museum pieces. Quantitative multiphase analysis by Rietveld refinement of the diffraction patterns was successfully demonstrated. Furthermore, the analysis of patterns associated with different artifact elements also yielded evidence for some peculiar perspective of the neutron diffraction diagnostics in archeometric applications. (orig.)

Effect of post annealing treatment on electrochromic properties of spray deposited niobium oxide thin films

International Nuclear Information System (INIS)

Mujawar, S.H.; Inamdar, A.I.; Betty, C.A.; Ganesan, V.; Patil, P.S.

2007-01-01

Niobium oxide thin films were deposited on the glass and fluorine doped tin oxide (FTO) coated glass substrates using simple and inexpensive spray pyrolysis technique. During deposition of the films various process parameters like nozzle to substrate distance, spray rate, concentration of sprayed solution were optimized to obtain well adherent and transparent films. The films prepared were further annealed and effect of post annealing on the structural, morphological, optical and electrochromic properties was studied. Structural and morphological characterizations of the films were carried out using scanning electron microscopy, atomic force microscopy and X-ray diffraction techniques. Electrochemical properties of the niobium oxide thin films were studied by using cyclic-voltammetry, chronoamperometry and chronocoulometry

Early Bronze Age Houses in Upper Mesopotamia: Evidence of Dwellings or Private Enterprises?

OpenAIRE

Mas, Juliette

2014-01-01

This paper deals with the research I carried out on domestic architecture and private economy during Early Bronze Age in Upper-Mesopotamia. Archaeological records, as well as textual evidence, has been used to try to define private households activities and their relationships with official institutions. Households were the main source of production, distribution and consumption during the Early Bronze Age. As it seems that these private economic entities produced goods and crafts in their ow...

The influence of annealing on yttrium oxide thin film deposited by reactive magnetron sputtering: Process and microstructure

Directory of Open Access Journals (Sweden)

Y. Mao

2017-01-01

Full Text Available Yttrium oxide thin films were prepared by reactive magnetron sputtering in different deposition condition with various oxygen flow rates. The annealing influence on the yttrium oxide film microstructure is investigated. The oxygen flow shows a hysteresis behavior on the deposition rate. With a low oxygen flow rate, the so called metallic mode process with a high deposition rate (up to 1.4µm/h was achieved, while with a high oxygen flow rate, the process was considered to be in the poisoned mode with an extremely low deposition rate (around 20nm/h. X-ray diffraction (XRD results show that the yttrium oxide films that were produced in the metallic mode represent a mixture of different crystal structures including the metastable monoclinic phase and the stable cubic phase, while the poisoned mode products show a dominating monoclinic phase. The thin films prepared in metallic mode have relatively dense structures with less porosity. Annealing at 600 °C for 15h, as a structure stabilizing process, caused a phase transformation that changes the metastable monoclinic phase to stable cubic phase for both poisoned mode and metallic mode. The composition of yttrium oxide thin films changed from nonstoichiometric to stoichiometric together with a lattice parameter variation during annealing process. For the metallic mode deposition however, cracks were formed due to the thermal expansion coefficient difference between thin film and the substrate material which was not seen in poisoned mode deposition. The yttrium oxide thin films that deposited in different modes give various application options as a nuclear material.

Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

Science.gov (United States)

Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

2018-04-01

In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

Nanoscale reduction of graphene oxide thin films and its characterization.

Science.gov (United States)

Lorenzoni, M; Giugni, A; Di Fabrizio, E; Pérez-Murano, Francesc; Mescola, A; Torre, B

2015-07-17

In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Energy Technology Data Exchange (ETDEWEB)

Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-08-15

The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

Science.gov (United States)

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

2017-03-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

KAUST Repository

Faber, Hendrik

2017-04-28

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

2015-07-15

In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

Epitaxial Lift-Off of Centimeter-Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics.

Science.gov (United States)

Shen, Lvkang; Wu, Liang; Sheng, Quan; Ma, Chunrui; Zhang, Yong; Lu, Lu; Ma, Ji; Ma, Jing; Bian, Jihong; Yang, Yaodong; Chen, Aiping; Lu, Xiaoli; Liu, Ming; Wang, Hong; Jia, Chun-Lin

2017-09-01

Mechanical flexibility of electronic devices has attracted much attention from research due to the great demand in practical applications and rich commercial value. Integration of functional oxide materials in flexible polymer materials has proven an effective way to achieve flexibility of functional electronic devices. However, the chemical and mechanical incompatibilities at the interfaces of dissimilar materials make it still a big challenge to synthesize high-quality single-crystalline oxide thin film directly on flexible polymer substrates. This study reports an improved method that is employed to successfully transfer a centimeter-scaled single-crystalline LiFe 5 O 8 thin film on polyimide substrate. Structural characterizations show that the transferred films have essentially no difference in comparison with the as-grown films with respect to the microstructure. In particular, the transferred LiFe 5 O 8 films exhibit excellent magnetic properties under various mechanical bending statuses and show excellent fatigue properties during the bending cycle tests. These results demonstrate that the improved transfer method provides an effective way to compose single-crystalline functional oxide thin films onto flexible substrates for applications in flexible and wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tungsten oxide thin films grown by thermal evaporation with high resistance to leaching

Energy Technology Data Exchange (ETDEWEB)

Correa, Diogo S. [Universidade Federal de Pelotas (UFPel), RS (Brazil). Centro de Ciencias Quimicas, Farmaceuticas e de Alimentos; Pazinato, Julia C.O.; Freitas, Mauricio A. de; Radtke, Claudio; Garcia, Irene T.S., E-mail: irene@iq.ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil). Instituto de Quimica; Dorneles, Lucio S. [Universidade Federal de Santa Maria (UFSM), RS (Brazil). Centro de Ciencias Naturais e Exatas

2014-05-15

Tungsten oxides show different stoichiometries, crystal lattices and morphologies. These characteristics are important mainly when they are used as photocatalysts. In this work tungsten oxide thin films were obtained by thermal evaporation on (100) silicon substrates covered with gold and heated at 350 and 600 °C, with different deposition times. The stoichiometry of the films, morphology, crystal structure and resistance to leaching were characterized through X-ray photoelectron spectroscopy, micro-Raman spectroscopy, scanning and transmission electron microscopy, X-ray diffractometry, Rutherford backscattering spectrometry and O{sup 16} (α,α')O{sup 16} resonant nuclear reaction. Films obtained at higher temperatures show well-defined spherical nanometric structure; they are composed of WO{sub 3.1} and the presence of hydrated tungsten oxide was also observed. The major crystal structure observed is the hexagonal. Thin films obtained through thermal evaporation present resistance to leaching in aqueous media and excellent performance as photocatalysts, evaluated through the degradation of the methyl orange dye. (author)

Inkjet-printed p-type nickel oxide thin-film transistor

Science.gov (United States)

Hu, Hailong; Zhu, Jingguang; Chen, Maosheng; Guo, Tailiang; Li, Fushan

2018-05-01

High-performance inkjet-printed nickel oxide thin-film transistors (TFTs) with Al2O3 high-k dielectric have been fabricated using a sol-gel precursor ink. The "coffee ring" effect during the printing process was facilely restrained by modifying the viscosity of the ink to control the outward capillary flow. The impacts on the device performance was studied in detail in consideration of annealing temperature of the nickel oxide film and the properties of dielectric layer. The optimized switching ability of the device were achieved at an annealing temperature of 280 °C on a 50-nm-thick Al2O3 dielectric layer, with a hole mobility of 0.78 cm2/V·s, threshold voltage of -0.6 V and on/off current ratio of 5.3 × 104. The as-printed p-type oxide TFTs show potential application in low-cost, large-area complementary electronic devices.

Hybrid composite thin films composed of tin oxide nanoparticles and cellulose

International Nuclear Information System (INIS)

Mahadeva, Suresha K; Nayak, Jyoti; Kim, Jaehwan

2013-01-01

This paper reports the preparation and characterization of hybrid thin films consisting of tin oxide (SnO 2 ) nanoparticles and cellulose. SnO 2 nanoparticle loaded cellulose hybrid thin films were fabricated by a solution blending technique, using sodium dodecyl sulfate as a dispersion agent. Scanning and transmission electron microscopy studies revealed uniform dispersion of the SnO 2 nanoparticles in the cellulose matrix. Reduction in the crystalline melting transition temperature and tensile properties of cellulose was observed due to the SnO 2 nanoparticle loading. Potential application of these hybrid thin films as low cost, flexible and biodegradable humidity sensors is examined in terms of the change in electrical resistivity of the material exposed to a wide range of humidity as well as its response–recovery behavior. (paper)

Effects of accelerated degradation on metal supported thin film-based solid oxide fuel cell

DEFF Research Database (Denmark)

Reolon, R. P.; Sanna, S.; Xu, Yu

2018-01-01

A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte and nanostruct......A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte......, electrochemical performances are steady, indicating the stability of the cell. Under electrical load, a progressive degradation is activated. Post-test analysis reveals both mechanical and chemical degradation of the cell. Cracks and delamination of the thin films promote a significant nickel diffusion and new...

Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

Directory of Open Access Journals (Sweden)

Bong Ju Lee

2015-01-01

Full Text Available Al-doped zinc-oxide (AZO thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021 to 6.16 × 1017 cm−3 with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD patterns show that the (002/(103 peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS of the O1s were decomposed into metal oxide component (peak A and the adsorbed molecular oxygen on thin films (peak B. The area ratio of XPS peaks (A/B was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

Science.gov (United States)

Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

2016-12-01

Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

Superconducting oxide thin films by ion beam sputtering

International Nuclear Information System (INIS)

Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

1987-01-01

Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

Electrochromics for smart windows: Oxide-based thin films and devices

Energy Technology Data Exchange (ETDEWEB)

Granqvist, Claes G.

2014-08-01

Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

Electrochromics for smart windows: Oxide-based thin films and devices

International Nuclear Information System (INIS)

Granqvist, Claes G.

2014-01-01

Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

Enhanced photoluminescence in transparent thin films of polyaniline–zinc oxide nanocomposite prepared from oleic acid modified zinc oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Sajimol Augustine, M., E-mail: sajimollazar@gmail.com [Department of Physics, St. Teresa' s College, Kochi-11, Kerala (India); Jeeju, P.P.; Varma, S.J.; Francis Xavier, P.A. [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India); Jayalekshmi, S., E-mail: lakshminathcusat@gmail.com [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India)

2014-07-01

Oleic acid capped zinc oxide (ZnO) nanoparticles have been synthesized by a wet chemical route. The chemical oxidative method is employed to synthesize polyaniline (PANI) and PANI/ZnO nanocomposites doped with four different dopants such as orthophosphoric acid (H{sub 3}PO{sub 4}), hydrochloric acid (HCl), naphthalene-2-sulphonic acid and camphor sulphonic acid (CSA). The samples have been structurally characterized by X-ray diffraction (XRD), field emission scanning electron microscopy and Fourier transform infrared (FT-IR) spectroscopic techniques. A comparison of the photoluminescence (PL) emission intensity of PANI and PANI/ZnO nanocomposites is attempted. The enhanced PL intensity in PANI/ZnO nanocomposites is caused by the presence of nanostructured and highly fluorescent ZnO in the composites. It has been observed that, among the composites, the H{sub 3}PO{sub 4} doped PANI/ZnO nanocomposite is found to exhibit the highest PL intensity because of the higher extent of (pi) conjugation and the more orderly arrangement of the benzenoid and quinonoid units. In the present work, transparent thin films of PANI and PANI/ZnO nanocomposite for which PL intensity is found to be maximum, have been prepared after re-doping with CSA by the spin-coating technique. The XRD pattern of the PANI/ZnO film shows exceptionally good crystallanity compared to that of pure PANI, which suggests that the addition of ZnO nanocrystals helps in enhancing the crystallanity of the PANI/ZnO nanocomposite. There is a significant increase in the PL emission intensity of the PANI/ZnO nanocomposite film making it suitable for the fabrication of optoelectronic devices. - Highlights: • Oleic acid capped zinc oxide nanoparticles are synthesized by wet chemical method. • Polyaniline/zinc oxide nanocomposites are prepared by in-situ polymerization. • Polyaniline and polyaniline/zinc oxide thin films are deposited using spin-coating. • Enhanced photoluminescence is observed in polyaniline

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

Directory of Open Access Journals (Sweden)

Imas Noviyana

2017-06-01

Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

Passivation of laser-treated nickel aluminum bronze as measured by electrochemical impedance spectroscopy

International Nuclear Information System (INIS)

Klassen, R.D.; Hyatt, C.V.; Roberge, P.R.

2000-01-01

Electrochemical impedance spectroscopy was used to assess the corrosion behavior of the weld zones and surface conditions of a laser-clad nickel aluminum bronze immersed in a 3.5% neutral saline solution. The zones and conditions examined included: (i) as-cast base material; (ii) laser-clad material with the high temperature oxide from welding intact; (iii) polished laser-clad material and (iv) specimens representative of just the as-deposited and reheated zones of the laser-clad surface. A pseudo steady-state level of passivation was reached in all the samples within 40 hours. The reheated zone passivated more slowly than the as-deposited region and both weld zones passivated more quickly than the base material. Electrochemical impedance data illustrated a transition during the passivation process of the polished specimens that is consistent with the development of a film layer that restricted mass transfer. The welding oxide from the laser treatment immediately behaved as a passivation film that was indistinguishable from that which eventually develops on polished specimens. (author)

Contribution towards ALD and MOCVD of rare earth oxides and hafnium oxide. From precursor evaluation to process development and thin film characterization

International Nuclear Information System (INIS)

Xu, Ke

2013-01-01

This PhD thesis is consisted of two major parts: precursor development for ALD and MOCVD applications as well as thin film deposition using ALD and MOCVD with self developed precursors. The first part of this work presents the synthesis, characterization and detailed thermal property investigations of different novel group IV and rare earth precursor classes (guandinate, guanidine and ketoiminate). The second part of this work presents the ALD and MOCVD depositions using various guanidinate precursors for forming corresponding metal oxide thin films. The overall motivation of this work is to fulfill the lack of precursors of rare earth and group IV elements for ALD and MOCVD applications that satisfy the stringent requirements for the modern microelectronic and optoelectronic technologies. The aspect of the precursor engineering part is focusing on influence of ligand sphere on precursors' chemical and thermal properties. In this way, we successfully introduced guanidine and ketoiminate as potential ligands for the precursor design. The thin film deposition part of this work is ALD of rare earth oxides and group IV oxides employing literature known compounds which were previously developed in our research group. The main focus was dedicated to the process optimization, the characterization of the structural, morphological, compositional and functional properties of the deposited thin films. Certain film properties were discussed comparatively with the corresponding thin films deposited with literature known precursors. It was already shortly demonstrated in Chapter 6 that the guanidine ligand showed potential interest as suitable ligand for precursor engineering. This titan guanidine precursor [Ti(NC(NMe 2 ) 2 ) 4 ] (GD1) possesses higher thermal stability compared to its parent amide, [Ti(NMe 2 ) 4 ], while reactivity against water is not significantly affected. It could be very interesting to transfer this ligand for the precursor development of rare earth

Suppression of Magnetoresistance in Thin WTe2 Flakes by Surface Oxidation.

Science.gov (United States)

Woods, John M; Shen, Jie; Kumaravadivel, Piranavan; Pang, Yuan; Xie, Yujun; Pan, Grace A; Li, Min; Altman, Eric I; Lu, Li; Cha, Judy J

2017-07-12

Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired transport properties down to a monolayer, which is challenging. Surface oxides are known to impart Fermi level pinning or degrade the mobility on a number of different systems, including transition metal dichalcogenides and black phosphorus. Semimetallic WTe 2 exhibits large magnetoresistance due to electron-hole compensation; thus, Fermi level pinning in thin WTe 2 flakes could break the electron-hole balance and suppress the large magnetoresistance. We show that WTe 2 develops an ∼2 nm thick amorphous surface oxide, which shifts the Fermi level by ∼300 meV at the WTe 2 surface. We also observe a dramatic suppression of the magnetoresistance for thin flakes. However, due to the semimetallic nature of WTe 2 , the effects of Fermi level pinning are well screened and are not the dominant cause for the suppression of magnetoresistance, supported by fitting a two-band model to the transport data, which showed the electron and hole carrier densities are balanced down to ∼13 nm. However, the fitting shows a significant decrease of the mobilities of both electrons and holes. We attribute this to the disorder introduced by the amorphous surface oxide layer. Thus, the decrease of mobility is the dominant factor in the suppression of magnetoresistance for thin WTe 2 flakes. Our study highlights the critical need to investigate often unanticipated and sometimes unavoidable extrinsic surface effects on the transport properties of layered dichalcogenides and other 2D materials.

On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

NARCIS (Netherlands)

Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

2011-01-01

Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

Palaeoethnobotanical Data from the High Mountainous Early Bronze Age Settlement of Tsaghkasar-1 (Mt. Aragats, Armenia

Directory of Open Access Journals (Sweden)

Roman Hovsepyan

2011-09-01

Full Text Available Palaeoethnobotanical investigations suggest that at least part of the Early Bronze Age population of Tsaghkasar was settled and practiced agriculture in the high mountainous zone. People there appear to have cultivated hexa‐ and tetraploid wheats (probably bread wheat and emmer and barley (possibly hulled. Bronze Age agriculture in the Southern Caucasus differs from earlier and later period when cultivation of pulses, oil‐producing plants, and other plants was common. This emphasis on the cultivation and use of certain cereal grains at Early Bronze sites such as Tsaghkasar can tentatively be added to a constellation of practices associated with the Kura‐Araxes culture in the South Caucasus.

Pressure Effects on Solid State Phase Transformation of Aluminium Bronze in Cooling Process

International Nuclear Information System (INIS)

Hai-Yan, Wang; Jian-Hua, Liu; Gui-Rong, Peng; Yan, Chen; Yu-Wen, Liu; Fei, Li; Wen-Kui, Wang

2009-01-01

Effects of high pressure (6 GPa) on the solid state phase transformation kinetic parameters of aluminum bronze during the cooling process are investigated, based on the measurement and calculation of its solid state phase transformation temperature, duration and activation energy and the observation of its microstructures. The results show that high pressure treatment can reduce the solid phase transformation temperature and activation energy in the cooling process and can shorten the phase transformation duration, which is favorable when forming fine-grained aluminum bronze

Multilayered metal oxide thin film gas sensors obtained by conventional and RF plasma-assisted laser ablation

International Nuclear Information System (INIS)

Mitu, B.; Marotta, V.; Orlando, S.

2006-01-01

Multilayered thin films of In 2 O 3 and SnO 2 have been deposited by conventional and RF plasma-assisted reactive pulsed laser ablation, with the aim to evaluate their behaviour as toxic gas sensors. The depositions have been carried out by a frequency doubled Nd-YAG laser (λ = 532 nm, τ = 7 ns) on Si(1 0 0) substrates, in O 2 atmosphere. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. A comparison of the electrical response of the simple (indium oxide, tin oxide) and multilayered oxides to toxic gas (nitric oxide, NO) has been performed. The influence on the structural and electrical properties of the deposition parameters, such as substrate temperature and RF power is reported

Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

International Nuclear Information System (INIS)

Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

2013-01-01

Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

Temperature Dependence of the Seebeck Coefficient in Zinc Oxide Thin Films

Science.gov (United States)

Noori, Amirreza; Masoumi, Saeed; Hashemi, Najmeh

2017-12-01

Thermoelectric devices are reliable tools for converting waste heat into electricity as they last long, produce no noise or vibration, have no moving elements, and their light weight makes them suitable for the outer space usage. Materials with high thermoelectric figure of merit (zT) have the most important role in the fabrication of efficient thermoelectric devices. Metal oxide semiconductors, specially zinc oxide has recently received attention as a material suitable for sensor, optoelectronic and thermoelectric device applications because of their wide direct bandgap, chemical stability, high-energy radiation endurance, transparency and acceptable zT. Understanding the thermoelectric properties of the undoped ZnO thin films can help design better ZnO-based devices. Here, we report the results of our experimental work on the thermoelectric properties of the undoped polycrystalline ZnO thin films. These films are deposited on alumina substrates by thermal evaporation of zinc in vacuum followed by a controlled oxidation process in air carried out at the 350-500 °C temperature range. The experimental setup including gradient heaters, thermometry system and Seebeck voltage measurement equipment for high resistance samples is described. Seebeck voltage and electrical resistivity of the samples are measured at different conditions. The observed temperature dependence of the Seebeck coefficient is discussed.

Deposition of zinc oxide thin films by reactive pulsed laser ablation

Czech Academy of Sciences Publication Activity Database

Bílková, Petra; Zemek, Josef; Mitu, B.; Marotta, V.; Orlando, S.

2006-01-01

Roč. 252, - (2006), s. 4604-4609 ISSN 0169-4332 Grant - others:NATO-CNR Outreach Fellowships Programm 2001(XE) 219.34 Institutional research plan: CEZ:AV0Z10100521 Keywords : reactive pulsed laser deposition * zinc oxide * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.436, year: 2006

Bioarchaeology of adaptation to a marginal environment in bronze age Western China.

Science.gov (United States)

Berger, Elizabeth; Wang, Hui

2017-07-08

This study examines human adaptation to the 4000 BP climate change event, which is said to have increased the marginality of Inner Asian environments. We propose to define "marginal" environments not in relation to a specific economic activity (e.g., agriculture), but in relation to whether humans living there are physiologically stressed. Three sites in the Hexi Corridor of Gansu were studied, one from the early and two from the late Bronze Age (N = 125). The study includes three indicators of physiological stress: linear enamel hypoplasias (LEH); tibial periosteal lesions; and fertility. The early and late Bronze Age groups were compared to examine whether human physiological stress increased. The percent of individuals with LEH declined dramatically, indicating fewer growth disruptions. Tibial periosteal reactions also changed, from mostly active to mostly healing at the time of death, indicating that frailty declined. Fertility, which is sensitive to changes in population health and resource availability, did not change significantly. Counter to the dominant narrative of environmental deterioration and subsistence system collapse, the Bronze Age residents of the Hexi Corridor show no skeletal evidence that they suffered from resource shortages or struggled to adapt in the fluctuating climate that pertained after the 4000 BP climate event. In fact, this study found that people suffered from less frailty and fewer growth disruptions after the unstable climate had persisted for some time. Therefore, in human biological terms, the Hexi Corridor did not become more marginal for human habitation during the Bronze Age. © 2017 Wiley Periodicals, Inc.

Nanoscale reduction of graphene oxide thin films and its characterization

KAUST Repository

Lorenzoni, M.

2015-06-29

In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material. © 2015 IOP Publishing Ltd.

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

Spectroscopic and luminescent properties of Co2+ doped tin oxide thin films by spray pyrolysis

Directory of Open Access Journals (Sweden)

K. Durga Venkata Prasad

2016-07-01

Full Text Available The wide variety of electronic and chemical properties of metal oxides makes them exciting materials for basic research and for technological applications alike. Oxides span a wide range of electrical properties from wide band-gap insulators to metallic and superconducting. Tin oxide belongs to a class of materials called Transparent Conducting Oxides (TCO which constitutes an important component for optoelectronic applications. Co2+ doped tin oxide thin films were prepared by chemical spray pyrolysis synthesis and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Co2+ ions in the host lattice and the luminescent properties of the prepared sample. Powder XRD data revealed that the crystal structure belongs to tetragonal rutile phase and its lattice cell parameters are evaluated. The average crystallite size was estimated to be 26 nm. The morphology of prepared sample was analyzed by using SEM and TEM studies. Functional groups of the prepared sample were observed in the FT-IR spectrum. Optical absorption and EPR studies have shown that on doping, Co2+ ions enter in the host lattice as octahedral site symmetry. PL studies of Co2+ doped SnO2 thin films exhibit blue and yellow emission bands. CIE chromaticity coordinates were also calculated from emission spectrum of Co2+ doped SnO2 thin films.

Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

KAUST Repository

Nayak, Pradipta K.

2013-05-08

It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

2013-09-02

Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

Energy Technology Data Exchange (ETDEWEB)

Baldi, G., E-mail: giacomo.baldi@cnr.it; Bosi, M.; Attolini, G.; Berzina, T.; Mosca, R.; Ponraj, J. S.; Iannotta, S. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, I-43124 Parma (Italy); Giusti, G.; Nozar, P.; Toccoli, T.; Verucchi, R. [IMEM-CNR Institute, Via alla Cascata 56/C, Povo – I-38123 Trento (Italy); Collini, C.; Lorenzelli, L. [FBK Bruno Kessler Foundation, Via Sommarive 18, I-38123 Trento (Italy)

2015-03-10

We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO{sub 2} thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

International Nuclear Information System (INIS)

Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

2015-01-01

Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

Science.gov (United States)

Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

2014-11-01

The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

Directory of Open Access Journals (Sweden)

Sheng-Po Chang

2012-01-01

Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

Room temperature inorganic polycondensation of oxide (Cu2O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

International Nuclear Information System (INIS)

Salek, G.; Tenailleau, C.; Dufour, P.; Guillemet-Fritsch, S.

2015-01-01

Oxide thin solid films were prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperature without the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepare two different structural and compositional materials, namely Cu 2 O and ZnO. The influence of hydrodynamic parameters over the particle shape and size is discussed. Spherical and rod shape nanoparticles were formed for Cu 2 O and ZnO, respectively. Isoelectric point values of 7.5 and 8.2 were determined for cuprous and zinc oxides, respectively, after zeta potential measurements. A shear thinning and thixotropic behavior was observed in both colloidal sols after peptization at pH ~ 6 with dilute nitric acid. Every colloidal dispersion stabilized in a low cost and environmentally friendly azeotrope solution composed of 96 vol.% of ethanol with water was used for the thin film preparation by the dip-coating technique. Optical properties of the light absorber cuprous oxide and transparent zinc oxide thin solid films were characterized by means of transmittance and reflectance measurements (300–1100 nm). - Highlights: • Room temperature inorganic polycondensation of crystalline oxides • Water and ethanol synthesis and solution stabilization of oxide nanoparticles • Low cost method for thin solid film preparation

Effects of concentration of reduced graphene oxide on properties of sol–gel prepared Al-doped zinc oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Chou, Ching-Tian; Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Chen, Wei-Chun

2016-04-30

Reduced-graphene-oxide-incorporated aluminum-doped zinc oxide (AZO:rGO) composite thin films were synthesized on glass substrates by using the sol–gel method. The effect of the rGO concentration (0–3 wt%) on structural, electrical, and optical properties of the composite film was investigated by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, and ultraviolet–visible spectrometry. All of the composite films showed a typical hexagonal wurtzite structure, and the films incorporated with 1 wt% rGO showed the highest (0 0 2) peak intensity. The sheet resistance of the films was effectively reduced by a factor of more than two as the rGO ratio increased from 0 to 1 wt%. However, the sheet resistance increased with a further increase in the rGO ratio. The optical transmittance of the composite film monotonically decreased with increasing the rGO ratio from 0 to 3 wt%. The average optical transmittance (400–700 nm) of the AZO:rGO thin film within 1 wt% rGO was above 81%. - Highlights: • Reduced-graphene-oxide-doped ZnO:Al composite films are synthesized by sol–gel. • All AZO:rGO thin films show a typical hexagonal wurtzite structure. • Sheet resistance of AZO:rGO(1 wt%) film decreases by a factor of more than two. • The average visible transmittance of the AZO:rGO(1 wt%) film was 81%.

Charge-density-wave partial gap opening in quasi-2D KMo6O17 purple bronze studied by angle resolved photoemission spectroscopy

International Nuclear Information System (INIS)

Valbuena, M.A.; Avila, J.; Pantin, V.; Drouard, S.; Guyot, H.; Asensio, M.C.

2006-01-01

Low dimensional (LD) metallic oxides have been a subject of continuous interest in the last two decades, mainly due to the electronic instabilities that they present at low temperatures. In particular, charge density waves (CDW) instabilities associated with a strong electron-phonon interaction have been found in Molybdenum metallic oxides such as KMo 6 O 17 purple bronze. We report an angle resolved photoemission (ARPES) study from room temperature (RT) to T ∼40 K well below the Peierls transition temperature for this material, with CDW transition temperature T CDW ∼120 K. We have focused on photoemission spectra along ΓM high symmetry direction as well as photoemission measurements were taken as a function of temperature at one representative k F point in the Brillouin zone in order to look for the characteristic gap opening after the phase transition. We found out a pseudogap opening and a decrease in the density of states near the Fermi energy, E F , consistent with the partial removal of the nested portions of the Fermi surface (FS) at temperature below the CDW transition. In order to elucidate possible Fermi liquid (FL) or non-Fermi liquid (NFL) behaviour we have compared the ARPES data with that one reported on quasi-1D K 0.3 MoO 3 blue bronze

Synchrotron radiation-based x-ray analysis of bronze artifacts from an Iron Age site in the Judean hills

International Nuclear Information System (INIS)

Friedman, E. S.; Brody, A. J.; Young, M. L.; Almer, J. D.; Serge, C. U.; Mini, S. M.

2008-01-01

Seven bronze bangles from Tell en-Nasbeh, northern Judah, were investigated to understand the phase composition and manufacturing process of the artifacts, and possibly suggest a provenance for their origin. Synchrotron x-ray radiation diffraction (XRD) and fluorescence (XRF) were used in the analysis to avoid any destructive sampling and at the same time penetrate through the surface into the core metal. These techniques enabled us to determine that the bangles were not just tin bronze, but leaded tin bronze. Based on excavation reports, it is unlikely that the metal objects were manufactured locally at Tell en-Nasbeh; rather, preliminary XRD and XRF data point towards the neighboring region of Edom as their origin. Despite their political enmity during the Iron Age II, the data suggest that Judahite social demands for bronze may have fostered a strong economic relationship between these two polities

Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

Energy Technology Data Exchange (ETDEWEB)

Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L. [CEA, DAM, DIF, F-91297 Arpajon (France); Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P. [ISAE, Universite de Toulouse, 10 avenue Edouard Belin, BP 54032, 31055 Toulouse Cedex 4 (France); Girard, S.; Ouerdane, Y.; Boukenter, A. [Universite de Saint-Etienne, Laboratoire H. Curien, UMR-5516, 42000, Saint-Etienne (France)

2015-07-01

Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered

Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

International Nuclear Information System (INIS)

Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L.; Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P.; Girard, S.; Ouerdane, Y.; Boukenter, A.

2015-01-01

Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered

Elemental analysis of bronze artifacts by muonic X-ray spectroscopy

International Nuclear Information System (INIS)

Ninomiya, Kazuhiko; Shinohara, Atsushi; Kubo, Michael K.; Strasser, Patrick; Nagatomo, Takashi; Kawamura, Naritoshi; Shimomura, Koichiro; Miyake, Yasuhiro; Kobayashi, Yoshio; Ishida, Katsuhiko; Higemoto, Wataru; Suzuki, Takao; Saito, Tsutomu

2015-01-01

A quantitative and multi-elemental analysis method for bulk samples based on muonic X-ray spectroscopy was applied to bronze artifacts (Tempo-Tsuho coins and a Seiun-kyo mirror). This method is based on the measurement of the characteristic high-energy muonic X-rays emitted in a sample after muon irradiation. The elemental compositions of these bronze artifacts were determined from muonic X-ray intensities in a non-destructive manner, using the relation between the muonic X-ray intensity and the elemental composition of the Cu–Sn–Pb alloy system. The analyzed values agreed well with those determined by X-ray fluorescence spectroscopy. We also estimated the detection limit of this method in the present experimental setup as 0.81 wt% of the background signal of the muonic X-ray spectra. (author)

Study on the Preparation and Properties of Colored Iron Oxide Thin Films

International Nuclear Information System (INIS)

Zhao Xianhui; Li Changhong; Liu Qiuping; He Junjing; Wang Hai; Liang Song; Duan Yandong; Liu Su

2013-01-01

Colored iron oxide thin films were prepared using Sol-gel technique. The raw materials were tetraethyl orthosilicate (TEOS), etoh ehanol (EtOH), iron nitrate, and de-ionized water. Various properties were measured and analysed, including the colour of thin films, surface topography, UV-Visible spectra, corrosion resistance and hydrophobicity. To understand how these properties influenced the structural and optical properties of Fe 2 O 3 thin films, Scanning Electron Microscope (SEM), UV Spectrophotometer and other facilities were employed. Many parameters influence the performance of thin films, such as film layers, added H 2 O content, and the amount of polydimethylsiloxane (PDMS). When the volume ratio of TEOS, EtOH and H 2 O was 15: 13: 1, the quality of Fe(NO 3 ) 3 ·9H 2 O was 6g, and pH value was 3, reddish and uniform Fe 2 O 3 thin films with excellent properties were produced. Obtained thin films possessed corrosion resistance in hydrochloric acid with pH=l and the absorption edge wavelength was ∼350.2nm. Different H 2 O contents could result in different morphologies of Fe 2 O 3 nanoparticles. When 1.5 ml PDMS was added into the Sol, thin films possessed hydrophobiliry without dropping. Coating with different layers, thin films appeared different morphologies. Meanwhile, with the increment of film layers, the absorbance increased gradually.

Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

Directory of Open Access Journals (Sweden)

Y. Djaoued

2012-01-01

Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

Breakthrough of the Nordic Bronze Age: Transcultural warriorhood and a Carpathian crossroad in the 16th century BC

DEFF Research Database (Denmark)

Vandkilde, Helle

2014-01-01

The breakthrough of the Nordic Bronze Age (NBA) c. 1600 bc as a koiné within Bronze Age Europe can be historically linked to the Carpathian Basin. Nordic distinctiveness entailed an entanglement of cosmology and warriorhood, albeit represented through different media in the hotspot zone (bronze) ...... momentous creativity that drew upon Carpathian originals, contacts and a pool of Carpathian ideas, but ultimately drawing on emergent Mycenaean hegemonies in the Aegean. This provided the incentive for a cosmology-rooted resource from which the NBA could take its starting point....

Investigation of structural, morphological and electrical properties of APCVD vanadium oxide thin films

International Nuclear Information System (INIS)

Papadimitropoulos, Georgios; Trantalidis, Stelios; Tsiatouras, Athanasios; Vasilopoulou, Maria; Davazoglou, Dimitrios; Kostis, Ioannis

2015-01-01

Vanadium oxide films were chemically vapor deposited (CVD) on oxidized Si substrates covered with CVD tungsten (W) thin films and on glass substrates covered with indium tin oxide (ITO) films, using vanadium(V) oxy-tri-isopropoxide (C 9 H 21 O 4 V) vapors. X-ray diffraction (XRD) measurements showed that the deposited films were composed of a mixture of vanadium oxides; the composition was determined mainly by the deposition temperature and less by the precursor temperature. At temperatures up to 450 C the films were mostly composed by monoclinic VO 2 . Other peaks corresponding to various vanadium oxides were also observed. X-ray microanalysis confirmed the composition of the films. The surface morphology was studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM). These measurements revealed that the morphology strongly depends on the used substrate and the deposition conditions. The well-known metal-insulator transition was observed near 75 C for films mostly composed by monoclinic VO 2 . Films deposited at 450 C exhibited two transitions one near 50 C and the other near 60 C possibly related to the presence of other vanadium phases or of important stresses in them. Finally, the vanadium oxide thin films exhibited significant sensory capabilities decreasing their resistance in the presence of hydrogen gas with response times in the order of a few seconds and working temperature at 40 C. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Application of microjet in heat treatment of aluminium bronzes

Directory of Open Access Journals (Sweden)

Z. Górny

2011-04-01

Full Text Available Mechanical properties of a CuAl10Fe4Ni4 bronze subjected to solution heat treatment and toughening were examined. In solution heattreatment, a microjet was used to raise the cooling rate. A slight increase of mechanical properties was observed.

Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

International Nuclear Information System (INIS)

Lin, Jyi-Tsong; Huang, Kuo-Dong; Hu, Shu-Fen

2008-01-01

In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P–N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 µm, whereas the conventional TFT suffers serious short channel effects at this gate length

青铜乐器自名研究%A Study of the Names Inscribed on Bronze Musical Instruments

Institute of Scientific and Technical Information of China (English)

陈双新

2001-01-01

Based on his studies of the bronze musical instruments, the author analyses the inscriptions referring the self-named modifiers and tries to give them new explanations. The study is important to understand the function and values of the bronze musical instruments.

Structural changes in graphene oxide thin film by electron-beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Chetna, E-mail: tchetna91@gmail.com [Materials Science Group, Inter University Accelerator Centre, New Delhi 67 (India); Lakshmi, G.B.V.S.; Kumar, Sunil; Tripathi, Ambuj [Materials Science Group, Inter University Accelerator Centre, New Delhi 67 (India); Avasthi, D.K. [Amity University, Noida 201313, Uttar Pradesh (India)

2016-07-15

Although we have a whole class of 2D materials, graphene has drawn much attention for its excellent electronic, optical, thermal and mechanical properties. Recent researches have shown its large scale production by the reduction of graphene oxide either thermally, chemically or electrochemically. Although the structure of graphene oxide is inhomogeneous and hence complicated due to the presence of organic moieties e.g. epoxy, carboxylic acid, hydroxyl groups etc., its properties can be tuned by reduction according to desired application. The aim of this work is to synthesize continuous thin film of graphene oxide using commercially available graphene oxide solution and to study its reduction by 25 keV electron beam irradiation at fluences varying from 2 × 10{sup 11} to 2 × 10{sup 13} e{sup −}/cm{sup 2}. Our studies using X-ray diffraction, Raman microscopy and UV–Vis spectroscopy showed that electron-beam irradiation is an effective tool for reduction of graphene oxide and for tuning its band gap.

Non-invasive chemical and phase analysis of Roman bronze artefacts from Thamusida (Morocco)

Energy Technology Data Exchange (ETDEWEB)

Gliozzo, Elisabetta, E-mail: gliozzo@unisi.i [Dipartimento di Scienze della Terra, Universita di Siena, via Laterina 8, 53100 Siena (Italy); Arletti, Rossella, E-mail: rarletti@unimore.i [Dipartimento di Scienze della Terra, Universita di Modena e Reggio Emilia, Largo S. Eufemia 19, 41100 Modena (Italy); Cartechini, Laura, E-mail: laura@thch.unipg.i [Istituto di Scienze e Tecnologie Molecolari del CNR (CNR-ISTM), c/o Dipartimento di Chimica, Universita di Perugia, via Elce di Sotto 8, 06123 Perugia (Italy); Dipartimento di Chimica, Universita di Perugia, via Elce di Sotto 8, 06123 Perugia (Italy); Imberti, Silvia, E-mail: Silvia.Imberti@stfc.ac.u [Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Didcot, OX11 0QX (United Kingdom); Kockelmann, Winfried A., E-mail: Winfried.Kockelmann@stfc.ac.u [Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Didcot, OX11 0QX (United Kingdom); Memmi, Isabella, E-mail: memmi@unisi.i [Dipartimento di Scienze della Terra, Universita di Siena, via Laterina 8, 53100 Siena (Italy); Rinaldi, Romano, E-mail: rrinaldi@unipg.i [Dipartimento di Chimica, Universita di Perugia, via Elce di Sotto 8, 06123 Perugia (Italy); Tykot, Robert H., E-mail: rtykot@cas.usf.ed [Department of Anthropology, University of South Florida, Tampa, FL 33620 (United States)

2010-12-15

A repertory of Roman military bronze equipment (1st- 3rd century AD) found at the archaeological site of Thamusida (Rabat, Morocco) was analysed by non-destructive X-ray fluorescence and time of flight neutron diffraction (TOF-ND). Most objects are made of leaded alloys, where copper is combined with tin and/or zinc and, in six cases, to arsenic as well. A mixed technology was employed, making a limited use of 'pure' semi-finished materials if compared with the large utilization of recycled materials (brass and bronze).

Graphene Oxide/Poly(3-hexylthiophene) Nanocomposite Thin-Film Phototransistor for Logic Circuit Applications

Science.gov (United States)

Mansouri, S.; Coskun, B.; El Mir, L.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed; Yakuphanoglu, F.

2018-04-01

Graphene is a sheet-structured material that lacks a forbidden band, being a good candidate for use in radiofrequency applications. We have elaborated graphene-oxide-doped poly(3-hexylthiophene) nanocomposite to increase the interlayer distance and thereby open a large bandgap for use in the field of logic circuits. Graphene oxide/poly(3-hexylthiophene) (GO/P3HT) nanocomposite thin-film transistors (TFTs) were fabricated on silicon oxide substrate by spin coating method. The current-voltage ( I- V) characteristics of TFTs with various P3HT compositions were studied in the dark and under light illumination. The photocurrent, charge carrier mobility, subthreshold voltage, density of interface states, density of occupied states, and I ON/ I OFF ratio of the devices strongly depended on the P3HT weight ratio in the composite. The effects of white-light illumination on the electrical parameters of the transistors were investigated. The results indicated that GO/P3HT nanocomposite thin-film transistors have high potential for use in radiofrequency applications, and their feasibility for use in digital applications has been demonstrated.

14C dating of the Early to Late Bronze Age stratigraphic sequence of Aegina Kolonna, Greece

International Nuclear Information System (INIS)

Wild, E.M.; Gauss, W.; Forstenpointner, G.; Lindblom, M.; Smetana, R.; Steier, P.; Thanheiser, U.; Weninger, F.

2010-01-01

Aegina Kolonna, located in the center of the Saronic Gulf in the Aegean Mediterranean (Greece), is one of the major archaeological sites of the Aegean Bronze Age with a continuous stratigraphic settlement sequence from the Late Neolithic to the Late Bronze Age. Due to its position next to the maritime cross roads between central mainland Greece, the northeast Peloponnese, the Cyclades and Crete, the island played an important role in the trade between these regions. In the course of new excavations, which focused on the exploration of the Early, Middle and Late Bronze Age at Kolonna, several short lived samples from different settlement phases have been 14 C-dated with the AMS method at the VERA laboratory. Bayesian sequencing of the 14 C data according to the stratigraphic position of the samples in the profile was performed to enable estimates of the transition time between the cultural phases. The Aegina Kolonna 14 C sequence is one of the longest existing so far for the Aegean Bronze Age, and therefore of major importance for the absolute Bronze Age chronology in this region. Preliminary results indicate that the Middle Helladic period seems to have started earlier and lasted longer than traditionally assumed. Further, at the present stage of our investigation we can give also a very tentative time frame for the Santorini volcanic eruption which seems to be in agreement with the science derived VDL date.

Building the Bronze Age : Architectural and social change on the Greek mainland during Early Helladic III, Middle Helladic and Late Helladic I

NARCIS (Netherlands)

Wiersma, Corien

2014-01-01

Communities living on the Greek Mainland during the end of the Early Bronze Age (EBA. ca. 2200-2000 BC) and the earlier Middle Bronze Age (MBA, ca. 2000-1800 BC) were thought to be relatively simple and egalitarian, while during the later MBA and early Late Bronze Age (LBA, ca. 1700-1600 BC),

Examination of Ife Bronze Casting Culture and Its Decline in ...

African Journals Online (AJOL)

DrNneka

civilization and culture, education, science and technology. ... to set up bronze casting industry to promote the commercial culture in the history of. Ife. ..... the development of science and technological advancement, while to others; it is the.

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

Science.gov (United States)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

2012-11-01

The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Wear-triggered self-healing behavior on the surface of nanocrystalline nickel aluminum bronze/Ti3SiC2 composites

Science.gov (United States)

Zhai, Wenzheng; Lu, Wenlong; Zhang, Po; Wang, Jian; Liu, Xiaojun; Zhou, Liping

2018-04-01

Self-healing can protect materials from diverse damages, but is intrinsically difficult in metals. This paper demonstrates a potential method through a simultaneous decomposition and oxidation of Ti3SiC2 to achieve healing of stress cracking on the surface of nickel aluminum bronze (NAB)/Ti3SiC2 nanocrystalline composites during fretting wear. At the finest nanocrystalline materials, a crack recovery would be attained at 76.5%. The repetitive fretting wear leads to a modest amount of 'flowability' of Ti3SiC2 toward the crack, facilitating crack recovery. Along with the wear-triggered self-healing, the NAB/Ti3SiC2 shows an improved tribological performance with the stable decreased friction torque due to the formation of lubrication TiO2 oxide.

Metal Oxides Doped PPY-PVA Blend Thin Films Based Gas Sensor

Directory of Open Access Journals (Sweden)

D. B. DUPARE

2009-02-01

Full Text Available Synthesis of metal oxides doped polypyrrole–polyvinyl alcohol blend thin films by in situ chemical oxidative polymerization, using microwave oven on glass substrate for development of Ammonia and Trimethyl ammine hazardous gas sensor. The all experimental process carried out at room temperature(304 K. These polymer materials were characterized by Chemical analyses, spectral studies (UV-visible and IR and conductivity measurement by four –probe technique. The surface morphology as observed in the SEM image was observed to be uniformly covering the entire substrate surface. The sensor was used for different concentration (ppm of TMA and Ammonia gas investigation at room temperature (304 k. This study found to possess improved electrical, mechanical and environmental stability metal oxides doped PPY-PVA films.

An investigation of room temperature ''oxidized'' thin films of A1 for photovoltaic applications

International Nuclear Information System (INIS)

Adegboyega, G.A.

1985-12-01

Sheet resistance and transmittance changes of thin films of A1 evaporated in high vacuum were measured during sorption of oxygen at room atmosphere. An increase of both sheet resistance and transmittance with a tendency to saturation has been observed. Evaluation of various thicknesses of the films for possible use as transparent electrode material for photovoltaic applications shows that for very thin films ( = 200 A) the ''oxidized'' films are superior. (author)

Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Aryanto, Didik, E-mail: didi027@lipi.go.id [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Marwoto, Putut; Sugianto [Physics Department, Faculty of Mathematics and Science, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Sudiro, Toto [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); Birowosuto, Muhammad D. [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); CINTRA UMI CNRS/NTU/THALES 3288 Research Techno Plaza, 50 Nanyang Drive, Border X Block, level 6, 637553 (Singapore); Sulhadi [Physics Department, Faculty of Mathematics and Science, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)

2016-04-19

Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtained at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.

Improvement of transistor characteristics and stability for solution-processed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Jeng, Jiann-Shing, E-mail: jsjeng@mail.nutn.edu.tw

2016-08-15

Nb-doped Zinc tin oxide (NZTO) channel materials have been prepared by solution process in combination with the spin-coating method. All NZTO thin film transistors (TFTs) are n-type enhancement-mode devices, either without or with Nb additives. High-valence niobium ion (ionic charge = +5) has a larger ionic potential and similar ionic radius to Zn{sup 2+} and Sn{sup 4+} ions. As compared with the pure ZTO device, introducing Nb{sup 5+} ions into the ZTO channel layers can improve the electrical properties and bias stability of TFTs because of the reduction of the oxygen vacancies. This study discusses the connection among the material properties of the NZTO films and the electrical performance and bias stability of NZTO TFTs and how they are influenced by the Nb/(Nb + Sn) molar ratios of NZTO films. - Highlights: • Ultra-thin high-valence niobium doped zinc-tin oxide (NZTO) thin films are prepared using a solution process. • Nb dopants in ZTO films reduce the oxygen vacancy and subgap adsorption of the ZTO films. • The Nb-doping concentration of the NZTO channel layer has a strong influence on the TFT performance.

High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

International Nuclear Information System (INIS)

Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

2002-01-01

Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

Energy Technology Data Exchange (ETDEWEB)

Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

2002-09-02

Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

Au Nanoparticle Sub-Monolayers Sandwiched between Sol-Gel Oxide Thin Films

Science.gov (United States)

Della Gaspera, Enrico; Menin, Enrico; Sada, Cinzia

2018-01-01

Sub-monolayers of monodisperse Au colloids with different surface coverage have been embedded in between two different metal oxide thin films, combining sol-gel depositions and proper substrates functionalization processes. The synthetized films were TiO2, ZnO, and NiO. X-ray diffraction shows the crystallinity of all the oxides and verifies the nominal surface coverage of Au colloids. The surface plasmon resonance (SPR) of the metal nanoparticles is affected by both bottom and top oxides: in fact, the SPR peak of Au that is sandwiched between two different oxides is centered between the SPR frequencies of Au sub-monolayers covered with only one oxide, suggesting that Au colloids effectively lay in between the two oxide layers. The desired organization of Au nanoparticles and the morphological structure of the prepared multi-layered structures has been confirmed by Rutherford backscattering spectrometry (RBS), Secondary Ion Mass Spectrometry (SIMS), and Scanning Electron Microscopy (SEM) analyses that show a high quality sandwich structure. The multi-layered structures have been also tested as optical gas sensors. PMID:29538338

Aromatic quinoxaline as corrosion inhibitor for bronze in aqueous ...

Indian Academy of Sciences (India)

Administrator

These compounds act through the formation of a protective film on the surface of the ... Bronze; inhibitors; quinoxalin compounds; chloride solution; electrochemical studies. 1. ... elements such as aluminum, nickel and iron offer a good ... cations such as pump casting, valves and heat exchanger. ..... to investigate this layer.

Excimer laser assisted re-oxidation of BaTiO3 thin films on Ni metal foils

International Nuclear Information System (INIS)

Bharadwaja, S. S. N.; Ko, S. W.; Qu, W.; Clark, T.; Rajashekhar, A.; Motyka, M.; Podraza, N.; Randall, C. A.; Trolier-McKinstry, S.

2016-01-01

Excimer laser assisted re-oxidation for reduced, crystallized BaTiO 3 thin films on Ni-foils was investigated. It was found that the BaTiO 3 can be re-oxidized at an oxygen partial pressure of ∼50 mTorr and substrate temperature of 350 °C without forming a NiO x interface layer between the film and base metal foil. The dielectric permittivity of re-oxidized films was >1000 with loss tangent values <2% at 100 Hz, 30 mV rms excitation signal. Electron Energy Loss Spectroscopy indicated that BaTiO 3 thin films can be re-oxidized to an oxygen stoichiometry close to ∼3 (e.g., stoichiometric). High resolution cross sectional transmission electron microscopy showed no evidence of NiO x formation between the BaTiO 3 and the Ni foil upon excimer laser re-oxidation. Spectroscopic ellipsometry studies on laser re-oxidized [001] C and [111] C BaTiO 3 single crystals indicate that the re-oxidation of BaTiO 3 single crystals is augmented by photo-excitation of the ozone, as well as laser pulse induced temperature and local stress gradients

Tungsten oxide thin films obtained by anodisation in low electrolyte concentration

Energy Technology Data Exchange (ETDEWEB)

Costa, Nadja B.D. da [Centro de Ciências Químicas, Farmacêuticas e de Alimentos, Universidade Federal de Pelotas, Campus Capão do Leão, s/n, Pelotas, RS (Brazil); Pazinato, Julia C.O. [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Sombrio, Guilherme; Pereira, Marcelo B.; Boudinov, Henri [Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Gündel, André; Moreira, Eduardo C. [Universidade Federal do Pampa, Travessa 45, 1650 Bagé, RS (Brazil); Garcia, Irene T.S., E-mail: irene.garcia@ufrgs.br [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil)

2015-03-02

Tungsten oxide nanostructured films were grown on tungsten substrates by anodisation under a fixed voltage and with sodium fluoride as electrolyte. The effect of the anion chloride and the influence of the modifying agent disodium hydrogen phosphate in the tungsten oxide films were also investigated. The structural characterisation of the films was performed by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The band gap was determined through diffuse reflectance spectroscopy. The thin films were photoluminescent and emitted in the range of 300 to 630 nm when irradiated at 266 nm. The synthesised films efficiently degraded of methyl orange dye in the presence of hydrogen peroxide and 250 nm radiation. The modifying agent was responsible for the improvement of the photocatalytic activity. Films with similar photocatalytic performance were obtained when the system sodium fluoride and disodium hydrogen phosphate were replaced by sodium chloride. The porous structure and low band gap values were responsible for the photocatalytic behaviour. - Highlights: • Tungsten oxide thin films were obtained by anodisation of tungsten in aqueous media. • The performance of the NaCl, NaF and NaF/Na{sub 2}HPO{sub 4} as electrolytes was investigated. • The relation between structure and optical behaviour has been discussed. • Films obtained with NaCl and NaF/Na{sub 2}HPO{sub 4} present similar photocatalytic activity.

Casting Simulation of an Austrian Bronze Age Sword Hilt

Science.gov (United States)

Pola, Annalisa; Mödlinger, Marianne; Piccardo, Paolo; Montesano, Lorenzo

2015-07-01

Bronze Age swords with a metal hilt can be considered the peak of Bronze Age casting technologies. To reconstruct the casting techniques used more than 3000 years ago, a metal hilted sword of the Schalenknauf type from Lower Austria was studied with the aid of macroscopic analyses and simulation of mold filling and casting solidification. A three-dimensional model of the hilt was created based on optical scanner measurements performed on a hilt recently discovered during archaeological excavations. Three different configurations of the gating system were considered, two on the pommel disk and one on the knob, and the effect of its location on the formation of casting defects was investigated. Three-dimensional computed tomography was used to detect internal defects, such as gas and shrinkage porosity, which were then compared with those calculated by simulation. The best match between actual and predicted hilt quality demonstrated the location of the gating system, which turned out to be on the pommel disk.

Chisels in the italian Bronze Age: technological and typological aspects

Directory of Open Access Journals (Sweden)

Speciale, Claudia

2010-12-01

Full Text Available Bronze chisels are tools used “à percussion posée”; this means they need a minimum length and some functional parts (tang, body, blade; they could have a handle of perishable material and they were used with a hammer to work wood, bronze and other materials. Chisels can be classified following their functional parts; the first element is the shape (rod or socketed chisel; the second one is body section; the third one is tang section. Chronology and distribution of every type were identified to obtain a general view of this class of tools during the Italian Bronze Age.

Los cinceles de bronce son herramientas que se utilizan en percusión apoyada (à percussion posée, por consiguiente, necesitan una longitud mínima y algunas partes funcionales (empuñadura, cuerpo, hoja; podrían tener un mango de material perecedero. Se utilizan con un martillo en el labrado de la madera, del bronce y de otros materiales. Los cinceles se pueden clasificar de acuerdo con los siguientes elementos funcionales: el primero es la forma (cincel de varilla o de cubo; el segundo es la sección del cuerpo; el tercero es la sección de la empuñadura. La cronología y la distribución de cada tipo se identificaron para obtener una visión general de esta clase de instrumentos durante la Edad del Bronce en Italia.

Tamil Chola Bronzes and Swamimalai Legacy: Metal Sources and Archaeotechnology

Science.gov (United States)

Srinivasan, Sharada

2016-08-01

This review explores the great copper alloy image casting traditions of southern India from archaeometallurgical and ethnometallurgical perspectives. The usefulness of lead isotope ratio and compositional analysis in the finger-printing and art historical study of more than 130 early historic, Pallava, Chola, later Chola, and Vijayanagara sculptures (fifth-eighteenth centuries) is highlighted, including Nataraja, Buddha, Parvati, and Rama images made of copper, leaded bronze, brass, and gilt copper. Image casting traditions at Swamimalai in Tamil Nadu are compared with artistic treatises and with the technical examination of medieval bronzes, throwing light on continuities and changes in foundry practices. Western Indian sources could be pinpointed for a couple of medieval images from lead isotope analysis. Slag and archaeometallurgical investigations suggest the exploitation of some copper and lead-silver sources in the Andhra and Karnataka regions in the early historic Satavahana period and point to probable copper sources for the medieval images in Karnataka, Tamil Nadu, and Andhra Pradesh. The general lower iron content in southern Indian bronzes perhaps renders the proximal copper-magnetite reserves of Seruvila in Sri Lanka as a less likely source. Given the lack of lead deposits in Sri Lanka, however, the match of the lead isotope signatures of a well-known Ceylonese Buddhist Tara in British Museum with a Buddha image from Nagapattinam in Tamil Nadu may underscore ties between the island nation and the southern Indian Tamil regions.

Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

Directory of Open Access Journals (Sweden)

Mia Nasrul Haque

2017-10-01

Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

International Nuclear Information System (INIS)

Mohd Ali, N I; Misran, N; Mansor, M F; Jamlos, M F

2017-01-01

This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified. (paper)

Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

Science.gov (United States)

Ali, N. I. Mohd; Misran, N.; Mansor, M. F.; Jamlos, M. F.

2017-05-01

This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified.

Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

International Nuclear Information System (INIS)

Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

2015-01-01

Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window

Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

Energy Technology Data Exchange (ETDEWEB)

Ong, Hui-Yng [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Engineering, Nanyang Polytechnic, Singapore 569830 (Singapore); Shrestha, Milan; Lau, Gih-Keong, E-mail: mgklau@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

2015-09-28

Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

Progress in thin film techniques

International Nuclear Information System (INIS)

Weingarten, W.

1996-01-01

Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

48 CFR 252.216-7000 - Economic price adjustment-basic steel, aluminum, brass, bronze, or copper mill products.

Science.gov (United States)

2010-10-01

...-basic steel, aluminum, brass, bronze, or copper mill products. 252.216-7000 Section 252.216-7000 Federal... adjustment—basic steel, aluminum, brass, bronze, or copper mill products. As prescribed in 216.203-4-70(a... Mill Products (JUL 1997) (a) Definitions. As used in this clause— Established price means a price which...

Structural and interfacial characteristics of thin (2 films grown by electron cyclotron resonance plasma oxidation on [100] Si substrates

International Nuclear Information System (INIS)

Nguyen, T.D.; Carl, D.A.; Hess, D.W.; Lieberman, M.A.; Gronsky, R.

1991-04-01

The feasibility of fabricating ultra-thin SiO 2 films on the order of a few nanometer thickness has been demonstrated. SiO 2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on [100] Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the [100] substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

Science.gov (United States)

Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

2015-09-21

: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

Effect of bronze on the compression of Nb3Sn in multifilamentary conductors

International Nuclear Information System (INIS)

Rupp, G.

1978-01-01

Nb 3 Sn in multifilamentary conductors is subject to compressive strain as a result of the relatively small thermal contraction of the filaments as compared to bronze. The critical current Isub(c) is consequently degraded. The critical current increases, when an external tensile stress is applied, and passes through a maximum. The ratio of the maximum critical current to the initial critical current increases with the flux density and reaches a value of two at a flux density of 16 T for technical conductors. The strain epsilonsub(m), at which Isub(c) maximum is reached, lies between 0.4% and 0.7% for the conductors investigated and depends on the material parameters. For a constant ratio of bronze to filament cross section this strain epsilonsub(m) is reduced as the Nb 3 Sn layer thickness is increased and can be determined approximately by a graphical method from the stress-strain diagram. Epsilonsub(m) is to a large extent dependent on the metallurgical properties of bronze, which vary to a considerable extent depending upon the heat treatment. (author)

Room temperature inorganic polycondensation of oxide (Cu{sub 2}O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

Energy Technology Data Exchange (ETDEWEB)

Salek, G.; Tenailleau, C., E-mail: tenailleau@chimie.ups-tlse.fr; Dufour, P.; Guillemet-Fritsch, S.

2015-08-31

Oxide thin solid films were prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperature without the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepare two different structural and compositional materials, namely Cu{sub 2}O and ZnO. The influence of hydrodynamic parameters over the particle shape and size is discussed. Spherical and rod shape nanoparticles were formed for Cu{sub 2}O and ZnO, respectively. Isoelectric point values of 7.5 and 8.2 were determined for cuprous and zinc oxides, respectively, after zeta potential measurements. A shear thinning and thixotropic behavior was observed in both colloidal sols after peptization at pH ~ 6 with dilute nitric acid. Every colloidal dispersion stabilized in a low cost and environmentally friendly azeotrope solution composed of 96 vol.% of ethanol with water was used for the thin film preparation by the dip-coating technique. Optical properties of the light absorber cuprous oxide and transparent zinc oxide thin solid films were characterized by means of transmittance and reflectance measurements (300–1100 nm). - Highlights: • Room temperature inorganic polycondensation of crystalline oxides • Water and ethanol synthesis and solution stabilization of oxide nanoparticles • Low cost method for thin solid film preparation.

Dataset on electro-optically tunable smart-supercapacitors based on oxygen-excess nanograin tungsten oxide thin film

Directory of Open Access Journals (Sweden)

Akbar I. Inamdar

2017-10-01

Full Text Available The dataset presented here is related to the research article entitled “Highly Efficient Electro-optically Tunable Smart-supercapacitors Using an Oxygen-excess Nanograin Tungsten Oxide Thin Film” (Akbar et al., 2017 [9] where we have presented a nanograin WO3 film as a bifunctional electrode for smart supercapacitor devices. In this article we provide additional information concerning nanograin tungsten oxide thin films such as atomic force microscopy, Raman spectroscopy, and X-ray diffraction spectroscopy. Moreover, their electrochemical properties such as cyclic voltammetry, electrochemical supercapacitor properties, and electrochromic properties including coloration efficiency, optical modulation and electrochemical impedance spectroscopy are presented.

Role of temperature and energy density in the pulsed laser deposition of zirconium oxide thin film

International Nuclear Information System (INIS)

Mittra, Joy; Abraham, G.J.; Viswanadham, C.S.; Kulkarni, U.D.; Dey, G.K.

2011-01-01

Present work brings out the effects of energy density and substrate temperature on pulsed laser deposition of zirconium oxide thin film on Zr-base alloy substrates. The ablation of sintered zirconia has been carried out using a KrF excimer laser having 30 ns pulse width and 600 mJ energy at source at 10 Hz repetition rate. To comprehend effects of these parameters on the synthesized thin film, pure zirconia substrate has been ablated at two different energy densities, 2 J.cm -2 and 5 J.cm -2 , keeping the substrate at 300 K, 573 K and 873 K, respectively. After visual observation, deposited thin films have been examined using Raman Spectroscopy (RS) and X-ray Photo-electron Spectroscopy (XPS). It has been found that the oxide deposited at 300 K temperature does not show good adherence with the substrate and deteriorates further with the reduction in energy density of the incident laser. The oxide films, deposited at 573 K and 873 K, have been found to be adherent with the substrate and appear lustrous black. These indicate that the threshold for adherence of the zirconia film on the Zr-base alloy substrate lies in between 300 K and 573 K. Analysis of Raman spectra has indicated that thin films of zirconia, deposited using pulsed laser, on the Zr-base metallic substrate are initially in amorphous state. Experimental evidence has indicated a strong link among the degree of crystallinity of the deposited oxide film, the substrate temperature and the energy density. It also has shown that the crystallization of the oxide film is dependent on the substrate temperature and the duration of holding at high temperature. The O:Zr ratios of the films, analyzed from the XPS data, have been found to be close to but less than 2. This appears to explain the reason for the transformation of amorphous oxide into monoclinic and tetragonal phases, below 573 K, and not into cubic phase, which is reported to be more oxygen deficient. (author)

Work function and quantum efficiency study of metal oxide thin films on Ag(100)

Science.gov (United States)

Chang, V.; Noakes, T. C. Q.; Harrison, N. M.

2018-04-01

Increasing the quantum efficiency (QE) of metal photocathodes is in the design and development of photocathodes for free-electron laser applications. The growth of metal oxide thin films on certain metal surfaces has previously been shown to reduce the work function (WF). Using a photoemission model B. Camino et al. [Comput. Mater. Sci. 122, 331 (2016), 10.1016/j.commatsci.2016.05.025] based on the three-step model combined with density functional theory calculations we predict that the growth of a finite number of MgO(100) or BaO(100) layers on the Ag(100) surface increases significantly the QE compared with the clean Ag(100) surface for a photon energy of 4.7 eV. Different mechanisms for affecting the QE are identified for the different metal oxide thin films. The addition of MgO(100) increases the QE due to the reduction of the WF and the direct excitation of electrons from the Ag surface to the MgO conduction band. For BaO(100) thin films, an additional mechanism is in operation as the oxide film also photoemits at this energy. We also note that a significant increase in the QE for photons with an energy of a few eV above the WF is achieved due to an increase in the inelastic mean-free path of the electrons.

Study of Interfacial Interactions Using Thin Film Surface Modification: Radiation and Oxidation Effects in Materials

International Nuclear Information System (INIS)

2014-01-01

Interfaces play a key role in dictating the long-term stability of materials under the influence of radiation and high temperatures. For example, grain boundaries affect corrosion by way of providing kinetically favorable paths for elemental diffusion, but they can also act as sinks for defects and helium generated during irradiation. Likewise, the retention of high-temperature strength in nanostructured, oxide-dispersion strengthened steels depends strongly on the stoichiometric and physical stability of the (Y, Ti)-oxide particles/matrix interface under radiation and high temperatures. An understanding of these interfacial effects at a fundamental level is important for the development of materials for extreme environments of nuclear reactors. The goal of this project is to develop an understanding stability of interfaces by depositing thin films of materials on substrates followed by ion irradiation of the film-substrate system at elevated temperatures followed by post-irradiation oxidation treatments. Specifically, the research will be performed by depositing thin films of yttrium and titanium (~500 nm) on Fe-12%Cr binary alloy substrate. Y and Ti have been selected as thin-film materials because they form highly stable protective oxides layers. The Fe-12%Cr binary alloy has been selected because it is representative of ferritic steels that are widely used in nuclear systems. The absence of other alloying elements in this binary alloy would allow for a clearer examination of structures and compositions that evolve during high-temperature irradiations and oxidation treatments. The research is divided into four specific tasks: (1) sputter deposition of 500 nm thick films of Y and Ti on Fe-12%Cr alloy substrates, (2) ion irradiation of the film-substrate system with 2MeV protons to a dose of 2 dpa at temperatures of 300°C, 500°C, and 700°C, (3) oxidation of as-deposited and ion-irradiated samples in a controlled oxygen environment at 500°C and 700°C, (4

Foraging behaviour in tadpoles of the bronze frog Rana temporalis ...

Indian Academy of Sciences (India)

Unknown

The ability of bronze frog Rana temporalis tadpoles (pure or mixed parental lines) to ... less of whether they are siblings or non-siblings in a group, which correlates well with ..... Sutherland W J and Parker G A 1992 The relationship between.

Use of portable X-ray fluorescence instrument for bulk alloy analysis on low corroded indoor bronzes

International Nuclear Information System (INIS)

Šatović, D.; Desnica, V.; Fazinić, S.

2013-01-01

One of the most often used non-destructive methods for elemental analysis when performing field measurements on bronze sculptures is X-ray fluorescence (XRF) analysis based on portable instrumentation. However, when performing routine in-situ XRF analysis on corroded objects obtained results are sometimes considerably influenced by the corrosion surface products. In this work the suitability of portable XRF for bulk analysis of low corroded bronzes, which were initially precisely characterized using sophisticated and reliable laboratory methods, was investigated and some improvements in measuring technique and data processing were given. Artificially corroded bronze samples were analyzed by a portable XRF instrument using the same methodology and procedures as when performing in-situ analysis on real objects. The samples were first investigated using sophisticated complementary laboratory techniques: Scanning Electron Microscopy, Proton-Induced X-ray Emission Spectroscopy and Rutherford Backscattering Spectrometry, in order to gain precise information on the formation of the corrosion product layers and in-depth elemental profile of corrosion layers for different aging parameters. It has been shown that for corrosion layers of up to ca. 25 μm a portable XRF can yield very accurate quantification results. - Highlights: • XRF quantification is very accurate for bronze corrosion layers of up to ca. 25 μm. • Corrosion layer formation on bronze described in two phases. • Corrosion layers precisely characterized using PIXE, RBS and SEM. • Corrosion approximated as CuO for layer thickness calculations via X-ray attenuations • Increasingly lighter corrosion matrix may cause SnLα radiation intensity inversion

Use of portable X-ray fluorescence instrument for bulk alloy analysis on low corroded indoor bronzes

Energy Technology Data Exchange (ETDEWEB)

Šatović, D., E-mail: dsatovic@alu.hr [Department of Conservation and Restoration, Academy of Fine Arts, Ilica 85, 10000 Zagreb (Croatia); Desnica, V. [Department of Conservation and Restoration, Academy of Fine Arts, Ilica 85, 10000 Zagreb (Croatia); Fazinić, S. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, 10000 Zagreb (Croatia)

2013-11-01

One of the most often used non-destructive methods for elemental analysis when performing field measurements on bronze sculptures is X-ray fluorescence (XRF) analysis based on portable instrumentation. However, when performing routine in-situ XRF analysis on corroded objects obtained results are sometimes considerably influenced by the corrosion surface products. In this work the suitability of portable XRF for bulk analysis of low corroded bronzes, which were initially precisely characterized using sophisticated and reliable laboratory methods, was investigated and some improvements in measuring technique and data processing were given. Artificially corroded bronze samples were analyzed by a portable XRF instrument using the same methodology and procedures as when performing in-situ analysis on real objects. The samples were first investigated using sophisticated complementary laboratory techniques: Scanning Electron Microscopy, Proton-Induced X-ray Emission Spectroscopy and Rutherford Backscattering Spectrometry, in order to gain precise information on the formation of the corrosion product layers and in-depth elemental profile of corrosion layers for different aging parameters. It has been shown that for corrosion layers of up to ca. 25 μm a portable XRF can yield very accurate quantification results. - Highlights: • XRF quantification is very accurate for bronze corrosion layers of up to ca. 25 μm. • Corrosion layer formation on bronze described in two phases. • Corrosion layers precisely characterized using PIXE, RBS and SEM. • Corrosion approximated as CuO for layer thickness calculations via X-ray attenuations • Increasingly lighter corrosion matrix may cause SnLα radiation intensity inversion.

Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

Science.gov (United States)

Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

2014-06-01

A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

Community Geothermal Technology Program: Silica bronze project. Final report

Energy Technology Data Exchange (ETDEWEB)

Bianchini, H.

1989-10-01

Objective was to incorporate waste silica from the HGP-A geothermal well in Pohoiki with other refractory materials for investment casting of bronze sculpture. The best composition for casting is about 50% silica, 25% red cinders, and 25% brick dust; remaining ingredient is a binder, such as plaster and water.

Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

2013-01-01

We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

Combinatorial study of zinc tin oxide thin-film transistors

Science.gov (United States)

McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

2008-01-01

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

Friction Stir Processing Parameters and Property Distributions in Cast Nickel Aluminum Bronze

National Research Council Canada - National Science Library

Rosemark, Brian P

2006-01-01

Cast nickel-aluminum bronze (NAB) alloy is specified for many marine applications, including ship propellers, due to its excellent corrosion-resistance combined with acceptable mechanical properties...

Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

International Nuclear Information System (INIS)

Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

2014-01-01

In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Directory of Open Access Journals (Sweden)

Nen-Wen Pu

2015-09-01

Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

Degradation of zinc oxide thin films in aqueous environment. Pt. II. Coated films

Energy Technology Data Exchange (ETDEWEB)

Rosa, L. de; Mitton, D.B.; Monetta, T.; Bellucci, F. [Naples Univ. (Italy). Dept. of Materials and Production Engineering; Springer, J. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

2001-12-01

cn Part I of this research, the degradation mechanism of two different bare ZnO thin films was assessed. Degradation of the electrical properties of ZnO as well as changes in morphology were observed for both films. In the current paper, the degradation of zinc oxide thin films coated with protective acrylic paint is addressed during exposure to (i) an aqueous 3.5% NaCl solution at 85 C and (ii) a standard damp heat test at 85% R.H. and 85 C. Electrical and electrochemical techniques were employed to monitor zinc oxide degradation during exposure to the test environments. Electrochemical Impedance Spectroscopy was employed to investigate the delamination phenomena at the ZnO/coating interface and a simple equivalent circuit was developed to quantitatively measure the delamination ratio. The effect of different silane based adhesion promoters (glycidil-oxypropyl-trimethoxy-silane and aminopropyl-trimethoxy-silane) was also investigated. (orig.)

Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

Science.gov (United States)

Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

2018-05-01

We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

The inhibition effect and mechanism of L-cysteine on the corrosion of bronze covered with a CuCl patina

International Nuclear Information System (INIS)

Wang, Tianran; Wang, Julin; Wu, Yuqing

2015-01-01

Highlights: • CuCl patina was synthesized on bronze electrodes with electrochemical method. • L-cysteine was used as a green inhibitor for bronze covered with CuCl patina. • The inhibition efficiency reached above 90%. • The inhibition mechanism of L-cysteine on CuCl patina was investigated. - Abstract: CuCl patina was synthesized on bronze electrodes with electrochemical method. The inhibition effect and mechanism of L-cysteine (Cys) on bronze covered with CuCl patina have been studied with electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) techniques. The EIS results show that Cys stabilized the CuCl patina to a great extent. The hydrolysis reaction of CuCl was inhibited effectively and an inhibition efficiency of over 90% was achieved. The XPS analyses indicate that the chemisorption of Cys molecules on CuCl surface occurred through sulfur atom in thiol and nitrogen atom in amino group

Environmental roots of the late bronze age crisis.

Directory of Open Access Journals (Sweden)

David Kaniewski

Full Text Available The Late Bronze Age world of the Eastern Mediterranean, a rich linkage of Aegean, Egyptian, Syro-Palestinian, and Hittite civilizations, collapsed famously 3200 years ago and has remained one of the mysteries of the ancient world since the event's retrieval began in the late 19(th century AD/CE. Iconic Egyptian bas-reliefs and graphic hieroglyphic and cuneiform texts portray the proximate cause of the collapse as the invasions of the "Peoples-of-the-Sea" at the Nile Delta, the Turkish coast, and down into the heartlands of Syria and Palestine where armies clashed, famine-ravaged cities abandoned, and countrysides depopulated. Here we report palaeoclimate data from Cyprus for the Late Bronze Age crisis, alongside a radiocarbon-based chronology integrating both archaeological and palaeoclimate proxies, which reveal the effects of abrupt climate change-driven famine and causal linkage with the Sea People invasions in Cyprus and Syria. The statistical analysis of proximate and ultimate features of the sequential collapse reveals the relationships of climate-driven famine, sea-borne-invasion, region-wide warfare, and politico-economic collapse, in whose wake new societies and new ideologies were created.

Electrocatalysis of oxygen electrode reactions by some perovskite oxides based on lanthanum manganate

International Nuclear Information System (INIS)

Raj, I.A.; Rao, K.V.; Venkatesan, V.K.

1984-01-01

In recent years, several electrocatalyst materials based on platinum, silver, tungsten bronzes, spinels, metal chelates, etc., have been studied for use as oxygen diffusion electrodes in alkaline fuel cells, secondary metal-air batteries, and water electrolyzers. However, virtually all catalysts of commercial importance are semiconducting transition metal oxides. The various oxide catalysts that have been studied can be grouped under mixed oxides, spinels, and perovskites

Charge-density-wave partial gap opening in quasi-2D KMo{sub 6}O{sub 17} purple bronze studied by angle resolved photoemission spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Valbuena, M.A. [LURE, Centre Universitaire Paris-Sud, Bat. 209D, B.P. 34, 91898 Orsay Cedex (France); Avila, J. [Instituto de Ciencia de Materiales de Madrid, ICMM - CSIC, 28049 Madrid (Spain); Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin - B.P. 48, 91192 GIF-SUR-YVETTE Cedex (France); Pantin, V. [LURE, Centre Universitaire Paris-Sud, Bat. 209D, B.P. 34, 91898 Orsay Cedex (France); Drouard, S. [LEPES-CENES, B.P. 166x, 38042 Grenoble, Cedex 9 (France); Guyot, H. [LEPES-CENES, B.P. 166x, 38042 Grenoble, Cedex 9 (France); Asensio, M.C. [Instituto de Ciencia de Materiales de Madrid, ICMM - CSIC, 28049 Madrid (Spain) and Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin - B.P. 48, 91192 GIF-SUR-YVETTE Cedex (France)]. E-mail: asensio@synchrotron-soleil.fr

2006-05-30

Low dimensional (LD) metallic oxides have been a subject of continuous interest in the last two decades, mainly due to the electronic instabilities that they present at low temperatures. In particular, charge density waves (CDW) instabilities associated with a strong electron-phonon interaction have been found in Molybdenum metallic oxides such as KMo{sub 6}O{sub 17} purple bronze. We report an angle resolved photoemission (ARPES) study from room temperature (RT) to T {approx}40 K well below the Peierls transition temperature for this material, with CDW transition temperature T {sub CDW} {approx}120 K. We have focused on photoemission spectra along {gamma}M high symmetry direction as well as photoemission measurements were taken as a function of temperature at one representative k {sub F} point in the Brillouin zone in order to look for the characteristic gap opening after the phase transition. We found out a pseudogap opening and a decrease in the density of states near the Fermi energy, E {sub F}, consistent with the partial removal of the nested portions of the Fermi surface (FS) at temperature below the CDW transition. In order to elucidate possible Fermi liquid (FL) or non-Fermi liquid (NFL) behaviour we have compared the ARPES data with that one reported on quasi-1D K{sub 0.3}MoO{sub 3} blue bronze.

Use your eyes - metallographic versus superficial traces of the crafting of Bronze Age ornaments

DEFF Research Database (Denmark)

Nørgaard, Heide Wrobel

and superficial archaeological examinations can be used to understand prehistoric craft. Furthermore, it will show that with an intensive knowledge about previous scientific investigations the superficial traces preserved can reveal a great amount of information and could talk for themselves. Taking as an example...... the early and middle Bronze Age bronze ornaments from North Germany, superficial traces of the metal crafting process, visible with the naked eye, will be compared with metallographic images. The aim of this presentation is to give an overview over the crafting traces everybody could see (with a bit...

Determination of the elemental composition of copper and bronze objects by neutron activation analysis

International Nuclear Information System (INIS)

Hoelttae, P.; Rosenberg, R.J.

1986-01-01

A method for the elemental analysis of copper and bronze objects is described. Na, Co, Ni, Cu, Zn, As, Ag, Sn, Sb, W, Ir and Au are determined through instrumental neutron activation analysis. Mg, Al, V, Ti and Mn are determined after chemical separation using anionic exchange. The detection limits for a number of other elements are also given. Results for NBS standard reference materials are presented and the results compared with the recommended values. The agreement is good. The results of the analysis of five ancient bronze and two copper objects are presented. (author)

Nanocomposite oxide thin films grown by pulsed energy beam deposition

International Nuclear Information System (INIS)

Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

2011-01-01

Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

Energy Technology Data Exchange (ETDEWEB)

Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

2014-09-15

The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

2012-01-01

Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

2015-03-15

Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

Release of copper from sintered tungsten-bronze shot under different pH conditions and its potential toxicity to aquatic organisms

International Nuclear Information System (INIS)

Thomas, Vernon G.; Santore, Robert C.; McGill, Ian

2007-01-01

Sintered tungsten-bronze is a new substitute for lead shot, and is about to be deposited in and around the wetlands of North America. This material contains copper in the alloyed form of bronze. This in vitro study was performed according to U.S. Fish and Wildlife Service criteria to determine the dissolution rate of copper from the shot, and to assess the toxic risk that it may present to aquatic organisms. The dissolution of copper from tungsten-bronze shot, pure copper shot, and glass beads was measured in a buffered, moderately hard, synthetic water of pH 5.5, 6.6, and 7.8 over a 28-day period. The dissolution of copper from both the control copper shot and the tungsten-bronze shot was affected significantly by the pH of the water and the duration of dissolution (all p values < 0.000). The rate of copper release from tungsten bronze shot was 30 to 50 times lower than that from the copper shot, depending on pH (p < 0.0000). The observed expected environmental concentration of copper released from tungsten-bronze shot after 28 days was 0.02 μg/L at pH 7.8, and 0.4 μg/L at pH 5.6, using a loading and exposure scenario specific in a U.S. Fish and Wildlife Service protocol. Ratio Quotient values derived from the highest EEC observed in this study (0.4 μg/L), and the copper toxic effect levels for all aquatic species listed in the U.S. Environmental Protection Agency ambient water quality criteria database, were all far less than the 0.1 criterion value. Given the conditions stipulated by the U.S. Fish and Wildlife Service and the U.S. Environmental Protection Agency, heavy loading from discharged tungsten-bronze shot would not pose a toxic risk to potable water, or to soil. Consequently, it would appear that no toxic risks to aquatic organisms will attend the use of tungsten-bronze shot of the approved composition. Given the likelihood that sintered tungsten-bronze of the same formula will be used for fishing weights, bullets, and wheel balance weights, it is

Binder-free manganese oxide/carbon nanomaterials thin film electrode for supercapacitors.

Science.gov (United States)

Wang, Ning; Wu, Chuxin; Li, Jiaxin; Dong, Guofa; Guan, Lunhui

2011-11-01

A ternary thin film electrode was created by coating manganese oxide onto a network composed of single-walled carbon nanotubes and single-walled carbon nanohorns. The electrode exhibited a porous structure, which is a promising architecture for supercapacitors applications. The maximum specific capacitances of 357 F/g for total electrode at 1 A/g were achieved in 0.1 M Na(2)SO(4) aqueous solution.

Controllable Electrochemical Synthesis of Reduced Graphene Oxide Thin-Film Constructed as Efficient Photoanode in Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Soon Weng Chong

2016-01-01

Full Text Available A controllable electrochemical synthesis to convert reduced graphene oxide (rGO from graphite flakes was introduced and investigated in detail. Electrochemical reduction was used to prepare rGO because of its cost effectiveness, environmental friendliness, and ability to produce rGO thin films in industrial scale. This study aimed to determine the optimum applied potential for the electrochemical reduction. An applied voltage of 15 V successfully formed a uniformly coated rGO thin film, which significantly promoted effective electron transfer within dye-sensitized solar cells (DSSCs. Thus, DSSC performance improved. However, rGO thin films formed in voltages below or exceeding 15 V resulted in poor DSSC performance. This behavior was due to poor electron transfer within the rGO thin films caused by poor uniformity. These results revealed that DSSC constructed using 15 V rGO thin film exhibited high efficiency (η = 1.5211% attributed to its higher surface uniformity than other samples. The addition of natural lemon juice (pH ~ 2.3 to the electrolyte accelerated the deposition and strengthened the adhesion of rGO thin film onto fluorine-doped tin oxide (FTO glasses.

Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

Energy Technology Data Exchange (ETDEWEB)

Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

2016-07-29

Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

Non-invasive PGAA, PIXE and ToF-ND analyses on Hungarian Bronze Age defensive armour

International Nuclear Information System (INIS)

Marianne Moedlinger; Imre Kovacs; Zoltan Szoekefalvi-Nagy; Ziad El Morr

2014-01-01

Non-invasive, archaeometric analyses on selected Hungarian Bronze Age defensive armour is presented here: three greaves, three helmets two shields as well as one vessel fragment were analysed with PIXE, PGAA and TOF-ND. The detected alloy elemental and phase composition as well as its intergranular or spatial concentration distribution reveals important insights into the alloys used and the manufacturing techniques applied c. 1200-950 BC, and allows to reconstruct the production techniques used during the Late Bronze Age. (author)

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

2013-01-01

We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

7 CFR 51.1145 - U.S. No. 1 Bronze.

Science.gov (United States)

2010-01-01

...) Internal quality: Lots meeting the internal requirements for “U.S. Grade AA Juice (Double A)” or “U.S... 7 Agriculture 2 2010-01-01 2010-01-01 false U.S. No. 1 Bronze. 51.1145 Section 51.1145 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing...

Study on acoustical properties of sintered bronze porous material for transient exhaust noise of pneumatic system

Science.gov (United States)

Li, Jingxiang; Zhao, Shengdun; Ishihara, Kunihiko

2013-05-01

A novel approach is presented to study the acoustical properties of sintered bronze material, especially used to suppress the transient noise generated by the pneumatic exhaust of pneumatic friction clutch and brake (PFC/B) systems. The transient exhaust noise is impulsive and harmful due to the large sound pressure level (SPL) that has high-frequency. In this paper, the exhaust noise is related to the transient impulsive exhaust, which is described by a one-dimensional aerodynamic model combining with a pressure drop expression of the Ergun equation. A relation of flow parameters and sound source is set up. Additionally, the piston acoustic source approximation of sintered bronze silencer with cylindrical geometry is presented to predict SPL spectrum at a far-field observation point. A semi-phenomenological model is introduced to analyze the sound propagation and reduction in the sintered bronze materials assumed as an equivalent fluid with rigid frame. Experiment results under different initial cylinder pressures are shown to corroborate the validity of the proposed aerodynamic model. In addition, the calculated sound pressures according to the equivalent sound source are compared with the measured noise signals both in time-domain and frequency-domain. Influences of porosity of the sintered bronze material are also discussed.

Medical image registration algorithms assesment Bronze Standard application enactment on grids using the MOTEUR workflow engine

CERN Document Server

Glatard, T; Pennec, X

2006-01-01

Medical image registration is pre-processing needed for many medical image analysis procedures. A very large number of registration algorithms are available today, but their performance is often not known and very difficult to assess due to the lack of gold standard. The Bronze Standard algorithm is a very data and compute intensive statistical approach for quantifying registration algorithms accuracy. In this paper, we describe the Bronze Standard application and we discuss the need for grids to tackle such computations on medical image databases. We demonstrate MOTEUR, a service-based workflow engine optimized for dealing with data intensive applications. MOTEUR eases the enactment of the Bronze Standard and similar applications on the EGEE production grid infrastructure. It is a generic workflow engine, based on current standards and freely available, that can be used to instrument legacy application code at low cost.

Correlation of mechanical properties with nondestructive evaluation of babbitt metal/bronze composite interface

Science.gov (United States)

Ijiri, Y.; Liaw, P. K.; Taszarek, B. J.; Frohlich, S.; Gungor, M. N.

1988-09-01

Interfaces of the babbitt metal-bronze composite were examined ultrasonically and were fractured using the Chalmers test method. It was found that the ultrasonic results correlated with the bond strength, the ductility, and the degree of bonding at the tested interface. Specifically, high ultrasonic reflection percentages were associated with low bond strength, low ductility, and low percentages of bonded regions. The fracture mechanism in the bonded area of the babbitt-bronze interface is related to the presence of the intermetallic compound, Cu6Sn5, at the interface. It is suggested that the non-destructive ultrasonic technique can detect the bond integrity of babbitted metals.

Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

International Nuclear Information System (INIS)

Liu, P.; Chen, T.P.; Liu, Z.; Tan, C.S.; Leong, K.C.

2013-01-01

Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O 2 plasma immersion has been examined. O 2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O 2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films. - Highlights: • Oxygen plasma immersion effect on indium gallium zinc oxide thin film properties • Oxygen-related defect reduces in the InGaZnO thin film with oxygen plasma immersion. • Increasing oxygen plasma immersion duration on device will decrease the off current. • Oxygen plasma immersion enhances the performance of device

Pyroelectricity of silicon-doped hafnium oxide thin films

Science.gov (United States)

Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

2018-04-01

Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

Morphology dependent dye-sensitized solar cell properties of nanocrystalline zinc oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, S.K., E-mail: sanjeevlrs732000@yahoo.co.in [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Inamdar, A.I.; Im, Hyunsik [Department of Semiconductor Science, Dongguk University, Seoul 100 715 (Korea, Republic of); Kim, B.G. [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004 (India)

2011-02-03

Research highlights: > Nano-crystalline zinc oxide thin films were electrosynthesized from an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution onto FTO coated conducting glass substrates using two different electrochemical routes, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) or SDS (sodium dodecyl sulfate). > The reproducibility of the catalytic activity of the SDS and PVA surfactants in the modification of the morphologies was observed. > Vertically aligned nest-like and compact structures were observed from the SDS and PVA mediated films, respectively, while the grain size in the ZnO thin films without an organic surfactant was observed to be {approx}150 nm. > The dye sensitized ZnO electrodes displayed excellent properties in the conversion process from light to electricity. The efficiencies of the surfactant mediated nanocrystalline ZnO thin films, viz. ZnO:SDS and ZnO:PVA, sensitized with ruthenium-II (N3) dye were observed to be 0.49% and 0.27%, respectively. - Abstract: Nano-crystalline zinc oxide thin films were electrosynthesized with an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution on to FTO coated glass substrates. Two different electrochemical baths were used, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) and SDS (sodium dodecyl sulfate). The organic surfactants played an important role in modifying the surface morphology, which influenced the size of the crystallites and dye-sensitized solar cell (DSSC) properties. The vertically aligned thin and compact hexagonal crystallites were observed with SDS mediated films, while the grain size in the films without an organic surfactant was observed to be {approx}150 nm. The conversion efficiencies of the ZnO:SDS:Dye and ZnO:PVA:Dye thin films were observed to be 0.49% and 0.27%, respectively.

Palaeoethnobotanical Data from the High Mountainous Early Bronze Age Settlement of Tsaghkasar-1 (Mt. Aragats, Armenia)

OpenAIRE

Roman Hovsepyan

2011-01-01

Palaeoethnobotanical investigations suggest that at least part of the Early Bronze Age population of Tsaghkasar was settled and practiced agriculture in the high mountainous zone. People there appear to have cultivated hexa‐ and tetraploid wheats (probably bread wheat and emmer) and barley (possibly hulled). Bronze Age agriculture in the Southern Caucasus differs from earlier and later period when cultivation of pulses, oil‐producing plants, and other plants was common. This emphasis on the c...

Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

International Nuclear Information System (INIS)

Galloway, H.C.

1995-12-01

Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

Synthesis of new perovskite and ''tetragonal bronze'' materials with thorium

International Nuclear Information System (INIS)

Launay, Suzanne; Erb, Alfred; Freundlich, William

1982-01-01

Disclosure and crystal chemistry study of the solid solutions Th(NbO 3 ) 4 , NaNbO 3 or AgNbO 3 with perovskite structure and Th(Nb, TaO 3 ) 4 , K(Nb,Ta)O 3 with ''tetragonal tungstene bronze'' structure, ''Banana'' type [fr

Color change mechanism of niobium oxide thin film with incidental light angle and applied voltage

Energy Technology Data Exchange (ETDEWEB)

Komatsu, Isao [Course of Information Science and Technology, Graduate School of Science and Technology, Tokai University (Japan); Aoki, Hayata [Course of Electro Photo Optics, Graduate School of Engineering, Tokai University (Japan); Ebisawa, Mizue [Tokyo Metropolitan Industrial Technology Research Institute (Japan); Kuroda, Akihiro [Department of Optical and Imaging Science & Technology, Faculty of Engineering, Tokai University (Japan); Kuroda Consulting Incorporated (Japan); Kuroda, Koichi [Kuroda Consulting Incorporated (Japan); Maeda, Shuichi [Course of Information Science and Technology, Graduate School of Science and Technology, Tokai University (Japan); Course of Electro Photo Optics, Graduate School of Engineering, Tokai University (Japan); Department of Optical and Imaging Science & Technology, Faculty of Engineering, Tokai University (Japan)

2016-03-31

Niobium oxide thin layers made by the anodization process showed coloration owing to thin film interference. The reflection spectra depended on both the applied voltage and incident light angle. Large color differences were observed at incident light angles between 5° and 70°, when the applied voltage was over 60 V. In this study, we explored the cause of these results using ellipsometry and goniophotometry to understand the transition of optical constants and the reflection spectra with applied voltage. Finally, we concluded that the coloration of the reflection spectra, which included only a first-order interference peak, exhibits a smaller change because the first order interference peak has a wider half value width than higher order interference peaks. - Highlights: • We investigated color change of Nb{sub 2}O{sub 5} oxide thin layers with incidental light angle. • The reflection spectra shift to lower wavelength region with increasing incident light angle. • The reflection spectra shift to higher wavelength region with increasing applied voltage. • First-order interference has wider half value width, and exhibits small color change.

Capital Cities in Late Bronze Age Greater Mesopotamia

OpenAIRE

Carlson, Evan

2017-01-01

This dissertation explores the relationships among founding capital cities, defining state territories, and creating and propagating national identities. In the modern period and deep into history, nascent nations struggling to define themselves and unify diverse states have founded capital cities to embody a national ethos, reveal a shared history, direct the relationship among subjects and government, and differentiate a society from its international peers. In the Late Bronze Age (LBA) (15...

Determination of the elemental composition of copper and bronze objects by neutron activation analysis

International Nuclear Information System (INIS)

Hoelttae, P.; Rosenberg, R.J.

1987-01-01

A method for the elemental analysis of copper and bronze objects is described. Na, Co, Ni, Cu, Zn, As, Ag, Sn, Sb, W, Ir and Au are determined through instrumental neutron activation analysis. Mg, Al, V, Ti and Mn are determined after chemical separation using anionic exchange. The detection limits for a number of other elements are also given. Results for NBS standard reference materials are presented and the results are compared with the recommended values. The agreement is good. The results of the analysis of five ancient bronze and two copper objects are also presented. (author) 3 refs.; 4 tabs

Rare earth metals, rare earth hydrides, and rare earth oxides as thin films

International Nuclear Information System (INIS)

Gasgnier, M.

1980-01-01

The review deals with pure rare earth materials such as rare earth metals, rare earth hydrides, and rare earth oxides as thin films. Several preparation techniques, control methods, and nature of possible contaminations of thin films are described. These films can now be produced in an extremely well-known state concerning chemical composition, structure and texture. Structural, electric, magnetic, and optical properties of thin films are studied and discussed in comparison with the bulk state. The greatest contamination of metallic rare earth thin films is caused by reaction with hydrogen or with water vapour. The compound with an f.c.c. structure is the dihydride LnH 2 (Ln = lanthanides). The oxygen contamination takes place after annealing at higher temperatures. Then there appears a compound with a b.c.c. structure which is the C-type sesquioxide C-Ln 2 O 3 . At room atmosphere dihydride light rare earth thin films are converted to hydroxide Ln(OH) 3 . For heavy rare earth thin films the oxinitride LnNsub(x)Osub(y) is observed. The LnO-type compound was never seen. The present review tries to set the stage anew for the investigations to be undertaken in the future especially through the new generations of electron microscopes

Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

Energy Technology Data Exchange (ETDEWEB)

Guimond, Sebastien

2009-06-04

The growth and the surface structure of well-ordered V{sub 2}O{sub 3}, V{sub 2}O{sub 5} and MoO{sub 3} thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V{sub 2}O{sub 3}(0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V{sub 2}O{sub 3} bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V{sub 2}O{sub 5}(001) and MoO{sub 3}(010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O{sub 2} in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V{sub 2}O{sub 5} and MoO{sub 3} layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a

Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

International Nuclear Information System (INIS)

Guimond, Sebastien

2009-01-01

The growth and the surface structure of well-ordered V 2 O 3 , V 2 O 5 and MoO 3 thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V 2 O 3 (0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V 2 O 3 bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V 2 O 5 (001) and MoO 3 (010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O 2 in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V 2 O 5 and MoO 3 layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a monolayer is formed dur-ing the preparation of supported vanadia

Oxidation of atomically thin MoS2 on SiO2

Science.gov (United States)

Yamamoto, Mahito; Cullen, William; Einstein, Theodore; Fuhrer, Michael

2013-03-01

Surface oxidation of MoS2 markedly affects its electronic, optical, and tribological properties. However, oxidative reactivity of atomically thin MoS2 has yet to be addressed. Here, we investigate oxidation of atomic layers of MoS2 using atomic force microscopy and Raman spectroscopy. MoS2 is mechanically exfoliated onto SiO2 and oxidized in Ar/O2 or Ar/O3 (ozone) at 100-450 °C. MoS2 is much more reactive to O2 than an analogous atomic membrane of graphene and monolayer MoS2 is completely etched very rapidly upon O2 treatment above 300 °C. Thicker MoS2 (> 15 nm) transforms into MoO3 after oxidation at 400 °C, which is confirmed by a Raman peak at 820 cm-1. However, few-layer MoS2 oxidized below 400 °C exhibits no MoO3 Raman mode but etch pits are formed, similar to graphene. We find atomic layers of MoS2 shows larger reactivity to O3 than to O2 and monolayer MoS2 transforms chemically upon O3 treatment even below 100 °C. Work supported by the U. of Maryland NSF-MRSEC under Grant No. DMR 05-20741.

Ceramic Composite Thin Films

Science.gov (United States)

Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Chemical vapour deposition of vanadium oxide thermochromic thin films

Science.gov (United States)

Piccirillo, Clara

Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films - both undoped and doped with tungsten, niobium and gold nanoparticles - which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

Development and manufacturing of bronze-processed Ta-added Nb3Sn wires for the ITER

International Nuclear Information System (INIS)

Kikuchi, Kenichi; Seidou, Masahiro; Iwaki, Genzou; Sakai, Syuuji; Moriai, Hidezumi; Nishi, Masataka; Yoshida, Kiyoshi; Isono, Takaaki; Tsuji, Hiroshi.

1997-01-01

Development work to produce a high-performance Nb 3 Sn superconducting wire for the center solenoid coil of the ITER was carried out. The effects of concurrently adding Ti and Ta to bronze-processed Nb 3 Sn wires were examined. In addition, a high-Sn-concentration bronze matrix was applied. Then, the relation between hysteresis loss and filament diameter was examined. Moreover, the cause of wire breakage during processing was elucidated. As a result, a reliable manufacturing process for high-performance Nb 3 Sn superconducting wire was established. (author)

Zinc oxide-potassium ferricyanide composite thin film matrix for biosensing applications

Energy Technology Data Exchange (ETDEWEB)

Saha, Shibu [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Arya, Sunil K. [Department of Science and Technology Centre on Biomolecular Electronics, National Physical Laboratory, New Delhi 110012 (India); Singh, S.P. [Department of Engineering Science and Materials, University of Puerto Rico, Mayaguez, PR 00680 (United States); Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Malhotra, B.D. [Department of Science and Technology Centre on Biomolecular Electronics, National Physical Laboratory, New Delhi 110012 (India); Gupta, Vinay, E-mail: vgupta@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2009-10-27

Thin film of zinc oxide-potassium ferricyanide (ZnO-KFCN) composite has been deposited on indium tin oxide (ITO) coated corning glass using pulsed laser deposition (PLD). The composite thin film electrode has been exploited for amperometric biosensing in a mediator-free electrolyte. The composite matrix has the advantages of high iso-electric point of ZnO along with enhanced electron communication due to the presence of a redox species in the matrix itself. Glucose oxidase (GOx) has been chosen as the model enzyme for studying the application of the developed matrix to biosensing. The sensing response of the bio-electrode, GOx/ZnO-KFCN/ITO/glass, towards glucose was studied using cylic voltammetry (CV) and photometric assay. The bio-electrode exhibits good linearity from 2.78 mM to 11.11 mM glucose concentration. The low value of Michaelis-Menten constant (1.69 mM) indicates an enhanced affinity of the immobilized enzyme towards its substrate. A quassireversible system is obtained with the composite matrix. The results confirm promising application of the ZnO-KFCN composite matrix for amperometric biosensing applications in a mediator-less electrolyte that could lead to the realization of an integrated lab-on-chip device.

Zinc oxide-potassium ferricyanide composite thin film matrix for biosensing applications

International Nuclear Information System (INIS)

Saha, Shibu; Arya, Sunil K.; Singh, S.P.; Sreenivas, K.; Malhotra, B.D.; Gupta, Vinay

2009-01-01

Thin film of zinc oxide-potassium ferricyanide (ZnO-KFCN) composite has been deposited on indium tin oxide (ITO) coated corning glass using pulsed laser deposition (PLD). The composite thin film electrode has been exploited for amperometric biosensing in a mediator-free electrolyte. The composite matrix has the advantages of high iso-electric point of ZnO along with enhanced electron communication due to the presence of a redox species in the matrix itself. Glucose oxidase (GOx) has been chosen as the model enzyme for studying the application of the developed matrix to biosensing. The sensing response of the bio-electrode, GOx/ZnO-KFCN/ITO/glass, towards glucose was studied using cylic voltammetry (CV) and photometric assay. The bio-electrode exhibits good linearity from 2.78 mM to 11.11 mM glucose concentration. The low value of Michaelis-Menten constant (1.69 mM) indicates an enhanced affinity of the immobilized enzyme towards its substrate. A quassireversible system is obtained with the composite matrix. The results confirm promising application of the ZnO-KFCN composite matrix for amperometric biosensing applications in a mediator-less electrolyte that could lead to the realization of an integrated lab-on-chip device.

Textured indium tin oxide thin films by chemical solution deposition and rapid thermal processing

International Nuclear Information System (INIS)

Mottern, Matthew L.; Tyholdt, Frode; Ulyashin, Alexander; Helvoort, Antonius T.J. van; Verweij, Henk; Bredesen, Rune

2007-01-01

The microstructure of state-of-the-art chemical solution deposited indium tin oxide thin films typically consists of small randomly oriented grains, high porosity and poor homogeneity. The present study demonstrates how the thin film microstructure can be improved significantly by tailoring the precursor solutions and deposition conditions to be kinetically and thermodynamically favorable for generation of homogeneous textured thin films. This is explained by the occurrence of a single heterogeneous nucleation mechanism. The as-deposited thin films, crystallized at 800 deg. C, have a high apparent density, based on a refractive index of ∼ 1.98 determined by single wavelength ellipsometry at 633 nm. The microstructure of the films consists of columnar grains with preferred orientation as determined by X-ray diffraction and transmission electron microscopy. The resistivity, measured by the four point probe method, is ∼ 2 x 10 -3 Ω cm prior to post-deposition treatments

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

Science.gov (United States)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Raman scattering, electrical and optical properties of fluorine-doped tin oxide thin films with (200) and (301) preferred orientation

Energy Technology Data Exchange (ETDEWEB)

Kim, Chang-Yeoul, E-mail: cykim15@kicet.re.kr [Nano-Convergence Intelligence Material Team, Korea Institute of Ceramic Eng. and Tech., Gasan-digtial-ro 10 Gil 77 Geumcheon-gu, 153-801 Seoul (Korea, Republic of); Riu, Doh-Hyung [Dept. of New Material Sci. and Eng., Seoul National University of Technology, Seoul (Korea, Republic of)

2014-12-15

(200) and (301) preferred oriented fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added and water-based FTO precursor solutions, respectively. (200) oriented FTO thin film from ethanol-added solution shows the lower electrical resistivity and visible light transmission than (301) preferred thin film from water-based solution. It is due to the higher carrier concentration and electron mobility in (200) oriented crystals, that is, the lower ionized impurity scattering. The higher electron concentration is related to the higher optical band gap energy, the lower visible light transmission, and the higher IR reflection. For (301) preferred FTO thin films from water-based solution, the lower carrier concentration and electron mobility make the higher electrical resistivity and visible light transmission. Raman scattering analysis shows that IR active modes prominent in (200) oriented FTO thin film are related with the lower electrical resistivity. - Highlights: • We coated fluorine-doped tin oxide thin films with preferred orientation of (200) and (301). • We examine changes in the level of electrical and optical properties with the orientation. • (200) preferred orientation showed lower electrical resistivity and optical transmittance. • (200) oriented thin films have higher electron concentrations that are related with IR active modes.

Electrodeposition and corrosion resistance of nanocrystalline white bronze (CuSn) coatings

NARCIS (Netherlands)

Hovestad, A.; Lekka, M.; Willemsen, R.M.R.; Tacken, R.A.; Bonora, P.L.

2008-01-01

For jewellery applications electroplated white bronze (CuSn) was investigated as undercoating for noble metal finishes as alternative to nickel. A strongly acidic plating bath was developed with an organic additive to suppress hydrogen evolution and obtain bright coatings. An electrochemical study

Design, Fabrication and Characterization of Thin Film Structures through Oxidation Kinetics

Science.gov (United States)

Diaz Leon, Juan Jose

Materials science and engineering is devoted to the understanding of the physics and chemistry of materials at the mesoscale and to applying that knowledge into real-life applications. In this work, different oxide materials and different oxidation methods are studied from a materials science point of view and for specific applications. First, the deposition of complex metal oxides is explored for solar energy concentration. This requires a number of multi-cation oxide structures such as thin-film dielectric barriers, low loss waveguides or the use of continuously graded composition oxides for antireflection coatings and light concentration. Then, oxidation via Joule heating is used for the self-alignment of a selector on top of a memristor structure on a nanovia. Simulations are used to explore the necessary voltage for the insulator-to-metal transition temperature of NbO2 using finite element analysis, followed by the fabrication and the characterization of such a device. Finally, long-term copper oxidation at room temperature and pressure is studied using optical techniques. Alternative characterization techniques are used to confirm the growth rate and phase change, and an application of copper oxide as a volatile conductive bridge is shown. All these examples show how the combination of novel simulation, fabrication and characterization techniques can be used to understand physical mechanisms and enable disruptive technologies in fields such as solar cells, light emitting diodes, photodetectors or memory devices.

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

Science.gov (United States)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam - 530 045, A.P. (India); Rao, T. Subba, E-mail: thotasubbarao6@gmail.com [Department of Physics, Sri Krishnadevaraya University, Anantapuramu - 515 003, A.P. (India)

2014-10-15

Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

Femtosecond laser surface structuring and oxidation of chromium thin coatings: Black chromium

Energy Technology Data Exchange (ETDEWEB)

Kotsedi, L., E-mail: Kotsedi@tlabs.ac.za [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa); Nuru, Z.Y. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa); Mthunzi, P. [National Laser Centre, Council for Scientific and Industrial Research, 0001 Pretoria (South Africa); Muller, T.F.G. [University of the Western Cape, Physics Department, Bellville, 7535 Cape Town (South Africa); Eaton, S.M. [Physics Department, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Julies, B. [University of the Western Cape, Physics Department, Bellville, 7535 Cape Town (South Africa); Manikandan, E. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa); Ramponi, R. [Physics Department, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Maaza, M. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa)

2014-12-01

Highlights: • Oxidation of the chromium thin film to chromium oxide by femtosecond laser with a fundamental wavelength of 1064 nm. • Solar absorber from chromium oxide that low percentage reflectance. • Femtosecond laser oxidation, with a de-focused laser. • Chromium oxide formation by femtosecond laser in normal ambient. - Abstract: In view of their potential applications as selective solar absorbers, chromium coatings on float glass substrates were nano/micro structured by femtosecond laser in air. Raman and X-rays diffraction investigations confirmed the formation of an ultra-porous α-Cr{sub 2}O{sub 3} layer at the surface; higher is the input laser power, enhanced is the crystallinity of the α-Cr{sub 2}O{sub 3} layer. The α-Cr{sub 2}O{sub 3} layer with the Cr underneath it in addition to the photo-induced porosity acted as a classical ceramic–metal nano-composite making the reflectance to decrease significantly within the spectral range of 190–1100 nm. The average reflectance decreased from 70 to 2%.

Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

OpenAIRE

Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

2017-01-01

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

Deposition of indium tin oxide thin films by cathodic arc ion plating

International Nuclear Information System (INIS)

Yang, M.-H.; Wen, J.-C.; Chen, K.-L.; Chen, S.-Y.; Leu, M.-S.

2005-01-01

Indium tin oxide (ITO) thin films have been deposited by cathodic arc ion plating (CAIP) using sintered oxide target as the source material. In an oxygen atmosphere of 200 deg. C, ITO films with a lowest resistivity of 2.2x10 -4 Ω-cm were obtained at a deposition rate higher than 450 nm/min. The carrier mobility of ITO shows a maximum at some medium pressures. Although morphologically ITO films with a very fine nanometer-sized structure were observed to possess the lowest resistivity, more detailed analyses based on X-ray diffraction are attempted to gain more insight into the factors that govern electron mobility in this investigation

Assembly and benign step-by-step post-treatment of oppositely charged reduced graphene oxides for transparent conductive thin films with multiple applications

Science.gov (United States)

Zhu, Jiayi; He, Junhui

2012-05-01

We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on PET showed a significant decrease in electrical conductivity. In addition, the graphene thin film had a smooth surface with tunable wettability.We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on

Cuprous oxide thin films prepared by thermal oxidation of copper layer. Morphological and optical properties

Energy Technology Data Exchange (ETDEWEB)

Karapetyan, Artak, E-mail: karapetyan@cinam.univ-mrs.fr [Aix Marseille Université, CINaM, 13288, Marseille (France); Institute for Physical Research of NAS of Armenia, Ashtarak-2 0203 (Armenia); Reymers, Anna [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Giorgio, Suzanne; Fauquet, Carole [Aix Marseille Université, CINaM, 13288, Marseille (France); Sajti, Laszlo [Laser Zentrum Hannover e.V. Hollerithallee 8, 30419 Hannover (Germany); Nitsche, Serge [Aix Marseille Université, CINaM, 13288, Marseille (France); Nersesyan, Manuk; Gevorgyan, Vladimir [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Marine, Wladimir [Aix Marseille Université, CINaM, 13288, Marseille (France)

2015-03-15

Structural and optical characterization of crystalline Cu{sub 2}O thin films obtained by thermal oxidation of Cu films at two different temperatures 800 °C and 900 °C are investigated in this work. X-ray diffraction measurements indicate that synthesized films consist of single Cu{sub 2}O phase without any interstitial phase and show a nano-grain structure. Scanning Electron Microscopy observations indicate that the Cu{sub 2}O films have a micro-scale roughness whereas High Resolution Transmission Electron Microscopy highlights that the nanocrystalline structure is formed by superposition of nearly spherical nanocrystals smaller than 30 nm. Photoluminescence spectra of these films exhibit at room temperature two well-resolved emission peaks at 1.34 eV due to defects energy levels and at 1.97 eV due to phonon-assisted recombination of the 1s orthoexciton in both film series. Emission characteristics depending on the laser power is deeply investigated to determine the origin of recorded emissions. Time-integrated spectra of the 1s orthoexciton emission reveals the presence of oxygen defects below the conduction band edge under non-resonant two-photon excitation using a wide range of excitations wavelengths. Optical absorption coefficients at room temperature are obtained from an accurate analysis of their transmission and reflection spectra, whereas the optical band gap energy is estimated at about 2.11 eV. Results obtained are of high relevance especially for potential applications in semiconductor devices such as solar cells, optical sources and detectors. - Highlights: • Nanostructured Cu{sub 2}O thin films were synthesized by thermal oxidation of Cu films. • The PL spectra of nanostructured thin films revealed two well-resolved emission peaks. • The PL properties were investigated under a broad range of experimental conditions. • Inter-band transition in the infrared range has been associated to V{sub Cu} and V{sub O} vacancies. • Absorption

Microfabrication of SrRuO3 thin films on various oxide substrates using LaAlO3/BaOx sacrificial bilayers

Science.gov (United States)

Harada, Takayuki; Tsukazaki, Atsushi

2018-02-01

Oxides provide various fascinating physical properties that could find use in future device applications. However, the physical properties of oxides are often affected by formation of oxygen vacancies during device fabrication processes. In this study, to develop a damage-free patterning process for oxides, we focus on a lift-off process using a sacrificial template layer, by which we can pattern oxide thin films without severe chemical treatment or plasma bombardment. As oxides need high thin-film growth temperature, a sacrificial template needs to be made of thermally stable and easily etchable materials. To meet these requirements, we develop a sacrificial template with a carefully designed bilayer structure. Combining a thermally and chemically stable LaAlO3 and a water-soluble BaOx, we fabricated a LaAlO3/BaOx sacrificial bilayer. The patterned LaAlO3/BaOx sacrificial bilayers were prepared on oxide substrates by room-temperature pulsed laser deposition and standard photolithography process. The structure of the sacrificial bilayer can be maintained even in rather tough conditions needed for oxide thin film growth: several hundred degrees Celsius under high oxygen pressure. Indeed, the LaAlO3/BaOx bilayer is easily removable by sonication in water. We applied the lift-off method using the LaAlO3/BaOx sacrificial bilayer to a representative oxide conductor SrRuO3 and fabricated micron-scale Hall-bar devices. The SrRuO3 channels with the narrowest line width of 5 μm exhibit an almost identical transport property to that of the pristine film, evidencing that the developed process is beneficial for patterning oxides. We show that the LaAlO3/BaOx lift-off process is applicable to various oxide substrates: SrTiO3, MgO, and Al2O3. The new versatile patterning process will expand the range of application of oxide thin films in electronic and photonic devices.

Synthesis of new perovskite and ''tetragonal bronze'' materials with thorium

Energy Technology Data Exchange (ETDEWEB)

Launay, S; Erb, A; Freundlich, W [Universite Paris-VI (France)

1982-03-22

Disclosure and crystal chemistry study of the solid solutions Th(NbO/sub 3/)/sub 4/, NaNbO/sub 3/ or AgNbO/sub 3/ with perovskite structure and Th(Nb, TaO/sub 3/)/sub 4/, K(Nb,Ta)O/sub 3/ with ''tetragonal tungstene bronze'' structure, ''Banana'' type.

UV absorption by cerium oxide nanoparticles/epoxy composite thin films

International Nuclear Information System (INIS)

Dao, Ngoc Nhiem; Luu, Minh Dai; Nguyen, Quang Khuyen; Kim, Byung Sun

2011-01-01

Cerium oxide (CeO 2 ) nanoparticles have been used to modify properties of an epoxy matrix in order to improve the ultra-violet (UV) absorption property of epoxy thin films. The interdependence of mechanical properties, UV absorption property and the dispersed concentration of CeO 2 nanoparticles was investigated. Results showed that, by increasing the dispersed concentration of CeO 2 nanoparticles up to 3 wt%, tensile modulus increases while two other mechanical properties, namely tensile strength and elongation, decrease. The UV absorption peak and the absorption edges of the studied thin films were observed in the UV-Vis absorption spectra. By incorporating CeO 2 nanoparticles into the epoxy matrix, an absorption peak appears at around 318 nm in UV-Vis spectra with increasing CeO 2 concentration from 0.1 to 1.0 wt%. Scanning electron microscopy (SEM) images revealed that a good dispersion of nanoparticles in the epoxy matrix by an ultrasonic method was achieved

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

Science.gov (United States)

Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

2012-09-01

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

The growth and evolution of thin oxide films on delta-plutonium surfaces

Energy Technology Data Exchange (ETDEWEB)

Garcia Flores, Harry G [Los Alamos National Laboratory; Pugmire, David L [Los Alamos National Laboratory

2009-01-01

The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

An electron microscopy study of the effect of Ce on plasma sprayed bronze coatings

Science.gov (United States)

Wensheng, Li; Wang, S. C.; Ma, Chao; Zhiping, Wang

2012-07-01

The Cu-Al eutectoid alloy is an excellent material for mould due to its superior low friction. The conventional sand casting technique, however, is not feasible to fabricate high Al bronze because of high hardness and brittleness. Plasma arc spray has been used to produce high Al/Fe bronze coatings for mould. The inherent impurities such as H, O, N, S during the spray, however, may affect the coating's mechanical strength. One approach is to utilise the active rare earth Ce to clean up these impurities. The study is to investigate the effect of Ce on the microstructure, which has few reported in the literature.

Easy and General Synthesis of Large-Sized Mesoporous Rare-Earth Oxide Thin Films by 'Micelle Assembly'.

Science.gov (United States)

Li, Yunqi; Bastakoti, Bishnu Prasad; Imura, Masataka; Dai, Pengcheng; Yamauchi, Yusuke

2015-12-01

Large-sized (ca. 40 nm) mesoporous Er2O3 thin films are synthesized by using a triblock copolymer poly(styrene-b-2-vinyl pyridine-b-ethylene oxide) (PS-b-P2VP-b-PEO) as a pore directing agent. Each block makes different contributions and the molar ratio of PVP/Er(3+) is crucial to guide the resultant mesoporous structure. An easy and general method is proposed and used to prepare a series of mesoporous rare-earth oxide (Sm2O3, Dy2O3, Tb2O3, Ho2O3, Yb2O3, and Lu2O3) thin films with potential uses in electronics and optical devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

Energy Technology Data Exchange (ETDEWEB)

Denayer, Jessica [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Bister, Geoffroy [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Simonis, Priscilla [Laboratory LPS, University of Namur, rue de bruxelles 61, 5000 Namur (Belgium); Colson, Pierre; Maho, Anthony [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Aubry, Philippe [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Vertruyen, Bénédicte [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Henrist, Catherine, E-mail: catherine.henrist@ulg.ac.be [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Lardot, Véronique; Cambier, Francis [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Cloots, Rudi [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium)

2014-12-01

Highlights: • Surfactant-assisted USP: a novel and low cost process to obtain high quality nickel oxide films, with or without lithium dopant. • Increased uniformity and reduced light scattering thanks to the addition of a surfactant. • Improved electrochromic performance (coloration efficiency and contrast) for lithium-doped films by comparison with the undoped NiO film. - Abstract: Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

Effect of Different Post Deposition Annealing Treatments on Properties of Zinc Oxide Thin Films

Directory of Open Access Journals (Sweden)

Arti Arora

2010-06-01

Full Text Available Two different post deposition annealing atmospheres of oxygen and forming gas have been investigated for the improvement of rf sputtered zinc oxide thin films. The results show that type of atmosphere (oxidant o reduction plays an important role in the changes observed in structural, electrical and optical properties. It has been found that the structural properties of rf sputtered zinc oxide films improve in all the annealing environments. The intensity and grain size increases as the annealing temperature increases. It has been found that films become stress free at lowest temperature in oxygen as compare to forming gas annealing. The zinc oxide films annealed in oxygen shows sufficient resistivity associated to high transmittance (83 % characteristics required for MEMS based acoustic devices.

Artefact biography 2.0 : the information value of corroded archaeological bronzes

NARCIS (Netherlands)

Nienhuis, J.

2017-01-01

The different phases in the life of archaeological objects can be described by artefact biography. This dissertation defines an updated version: artefact biography 2.0, and the life phases of Early Iron Age bronze studs from Oss-Zevenbergen, the Netherlands, are elaborated. Throughout the thesis,

PREFACE: Proceedings Symposium G of E-MRS Spring Meeting on Fundamentals and Technology of Multifunctional Oxide Thin Films

Science.gov (United States)

2010-07-01

Oxide materials exhibit a large variety of functional properties that are useful in a plethora of applications. Symposium G focused on oxide thin films that include dielectric or switching properties. Its program mirrored very well the strong worldwide search for high-K thin films for gate, memory, and on-chip capacitors, as well as the emerging field of functional thin films for MEMS. A complete session was devoted to the colossal effect of dielectric response in (Ca,Cu)TiO3, representing the major European research groups in this field. A comprehensive overview on this phenomenon was given by D Sinclair J Wolfman presented the latest results on CCTO thin films obtained by wafer scale pulsed laser deposition. A Loidl showed the analytical power of dielectric spectroscopy when covering the complete frequency range from 1-1012 Hz, i.e. from space charge to phonon contributions at the example of CCTO. Another session was devoted to applications in non-volatile memories, covering various effects including ferroelectric and resistive switching, the complex behavior of oxide tunnel junctions (H Kohlstedt), the possibility to manipulate the magnetic state of a 2d-electron gas by the polarization of an adjacent ferroelectric gate (I Stolitchnov). Latest advancements in ALD processing for high-K thin films in dynamic RAM were reported by S Ramanathan. The advancement of piezoelectric PZT thin film MEMS devices was well documented by outstanding talks on their developments in industry (M Klee, F Tyholdt), new possibilities in GHz filters (T Matshushima), advancements in sol-gel processing (B Tuttle, H Suzuki), and low temperature integration approaches by UV light curing (S Trolier-McKinstry). Recent advances in incipient ferroelectric thin films and nano composites for tunable capacitors in microwave applications were present by A Vorobiev and T Yamada. Integrated electro-optics is another field to be conquered by thin film structures. The impressive progress made in this

Solid Oxide Fuel Cell Based Upon Colloidal Deposition of Thin Films for Lower Temperature Operation (Preprint)

National Research Council Canada - National Science Library

Reitz, T. L; Xiao, H

2006-01-01

In order to reduce the operating temperature of solid oxide fuel cells (SOFCs), anode-supported cells incorporating thin film electrolytes in conjunction with anode/electrolyte and cathode/electrolyte interlayers were studied...

Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films

Science.gov (United States)

Zhang, H.; Gauquelin, N.; McMahon, C.; Hawthorn, D. G.; Botton, G. A.; Wei, J. Y. T.

2018-03-01

It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7 -δ grown by pulsed laser deposition are annealed at up to 700 atm O2 and 900 ∘C , in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15 -δ and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9 -δ and YBa2Cu6O10 -δ phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7 -δ powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.

Grain-size effect on the electrical properties of nanocrystalline indium tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Hoon [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); Kim, Young Heon, E-mail: young.h.kim@kriss.re.kr [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ahn, Sang Jung [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ha, Tae Hwan [University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Future Biotechnology Research Division, Korea Research Institute of Bioscience and Biotechnology (KRIBB), 125 Gwahak-ro, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Kim, Hong Seung [Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, 727 Taejong-Ro, Busan 606-791 (Korea, Republic of)

2015-09-15

Highlights: • Nanometer-sized small grains were observed in the ITO thin films. • The grain size increased as the post-thermal annealing temperature increased. • The mobility of ITO thin films increased with increasing grain size. • The ITO film annealed at 300 °C was an amorphous phase, while the others were polycrystalline structure. - Abstract: In this paper, we demonstrate the electrical properties, depending on grain size, of nanocrystalline indium tin oxide (ITO) thin films prepared with a solution process. The size distributions of nanometer-sized ITO film grains increased as the post-annealing temperature increased after deposition; the grain sizes were comparable with the calculated electron mean free path. The mobility of ITO thin films increased with increasing grain size; this phenomenon was explained by adopting the charge-trapping model for grain boundary scattering. These findings suggest that it is possible to improve mobility by reducing the number of trapping sites at the grain boundary.

The uniformity study of non-oxide thin film at device level using electron energy loss spectroscopy

Science.gov (United States)

Li, Zhi-Peng; Zheng, Yuankai; Li, Shaoping; Wang, Haifeng

2018-05-01

Electron energy loss spectroscopy (EELS) has been widely used as a chemical analysis technique to characterize materials chemical properties, such as element valence states, atoms/ions bonding environment. This study provides a new method to characterize physical properties (i.e., film uniformity, grain orientations) of non-oxide thin films in the magnetic device by using EELS microanalysis on scanning transmission electron microscope. This method is based on analyzing white line ratio of spectra and related extended energy loss fine structures so as to correlate it with thin film uniformity. This new approach can provide an effective and sensitive method to monitor/characterize thin film quality (i.e., uniformity) at atomic level for thin film development, which is especially useful for examining ultra-thin films (i.e., several nanometers) or embedded films in devices for industry applications. More importantly, this technique enables development of quantitative characterization of thin film uniformity and it would be a remarkably useful technique for examining various types of devices for industrial applications.

Fluorine-doped tin oxide surfaces modified by self-assembled alkanethiols for thin-film devices

Energy Technology Data Exchange (ETDEWEB)

Alves, A.C.T.; Gomes, D.J.C.; Silva, J.R.; Silva, G.B., E-mail: george@cpd.ufmt.br

2013-08-15

In this work, we have investigated self-assembled monolayers (SAMs) from alkanethiols on fluorine-doped tin oxide (FTO) surfaces, which were used as an anode for thin-film devices prepared from the conductive copolymer so-called sulfonated poly(thiophene-3-[2-(2-methoxyethoxy) ethoxy]-2,5-diyl) (S-P3MEET). The assembled monolayers were characterized by using wetting contact angle, atomic force microscopy, and electrical measurements. The results indicated that dodecanethiol molecules, CH{sub 3}(CH{sub 2}){sub 11}SH, were well assembled on the FTO surfaces. In addition, it was found similar values of wetting contact angle for dodecanethiol assembled on both FTO and Au surfaces. Concerning the thin-film device, current–voltage analysis revealed a hysteresis. This behavior was associated to a charge-trapping effect and also to structural changes of the SAMs. Finally, charge injection capability of tin oxide electrodes can be improved by using SAMs and then this approach can plays an important role in molecular-scale electronic devices.

Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

International Nuclear Information System (INIS)

Sohn, Joonsung; Song, Sang-Hun; Kwon, Hyuck-In; Nam, Dong-Woo; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik

2013-01-01

We have investigated the effects of vacuum annealing on the optical and electrical properties of the p-type copper-oxide thin-film transistors (TFTs). The vacuum annealing of the copper-oxide thin-film was performed using the RF magnetron sputter at various temperatures. From the x-ray diffraction and UV-vis spectroscopy, it is demonstrated that the high-temperature vacuum annealing reduces the copper-oxide phase from CuO to Cu 2 O, and increases the optical transmittance in the visible part of the spectrum. The fabricated copper-oxide TFT does not exhibit the switching behavior under low-temperature vacuum annealing conditions. However, as the annealing temperature increases, the drain current begins to be modulated by a gate voltage, and the TFT exhibits a high current on–off ratio over 10 4 as the vacuum annealing temperature increases over 450 °C. These results show that the vacuum annealing process can be an effective method of simultaneously improving the optical and electrical performances in p-type copper-oxide TFTs. (paper)

Bilayered Oxide thin films for transparent electrode application

Science.gov (United States)

Dutta, Titas; Narayan, Jagdish

2008-10-01

Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films

OpenAIRE

Arpana Agrawal; Tanveer Ahmad Dar; Pratima Sen

2013-01-01

The paper describes the structural and optical properties of Magnesium doped Zinc Oxide (Mg  3.5 %, 6 %, 9 %, 12 % by weight) thin films prepared by pulsed laser deposition technique. The samples are characterized by X-ray diffraction technique, Ultra-violet visible absorption spectroscopy, X-ray photoelectron spectroscopy. X-ray diffraction results reveal the polycrystalline nature of samples with no impurity or secondary phase formation. Ultra-violet visible absorption spectroscopy studies...

Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

International Nuclear Information System (INIS)

Seveno, R.; Braud, A.; Gundel, H.W.

2005-01-01

In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O 3 , PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO 3 ) by chemical solution deposition is studied. The SrRuO 3 thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO 3 layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 μC/cm were found

Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

2016-05-01

In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

Radiocarbon dating of ancient bronze statues: Preliminary results from the Riace statues

International Nuclear Information System (INIS)

Calcagnile, L.; D'Elia, M.; Quarta, G.; Vidale, M.

2010-01-01

The low amount of material needed for the measurements makes AMS radiocarbon a technique suitable for the dating of ancient bronze artefacts through the analysis of the organic residues contained into the casting cores. We present the results of the AMS radiocarbon dating analyses carried out on the organic remains extracted from the casting cores of the Riace bronzes, among the most famous and well preserved sculptures of the Greek-Classical period. Although different dating hypotheses have been suggested on the base of stylistic considerations, no conclusive answers are, so far, available. The sample selection and preparation protocols of the different kind of organic materials (charred wood, vegetal remains and animal hairs) are described as well as the interpretation of the results in the frame of the current dating hypotheses and available analytical information about the casting technology.

Thin zirconium oxides

International Nuclear Information System (INIS)

Oviedo, Cristina

2000-01-01

Polycrystalline Zr and two pure Zr single-crystal samples, one oriented with the normal to the surface parallel to the c-axis of the hcp structure (Z1) and the other with the normal perpendicular to c (Z2), were oxidised at 10 -8 , 10 -7 and 10 -6 Torr and room temperature. Oxidation kinetics, composition and thicknesses of the oxide films formed in each case were analyzed using XPS (X-ray Photoelectron Spectroscopy) as the main technique. The oxidation kinetics followed logarithmic laws in all cases. The deconvolution of XPS Zr3d peaks indicated the formation of two Zr-O compounds before the formation of ZrO 2 . Varying the photoelectrons take-off angle, the compound distribution inside the oxide films could be established. Thus, it was confirmed that the most external oxide, in contact with the gas, was ZrO 2 . The thickness of the films grown at the different pressures was determined. In the polycrystalline samples, thicknesses between 15 and 19 ± 2Angstroem were obtained for pressures between 10 -8 and 10 -6 Torr, in close coincidence with the determined ones for Z2. The thicknesses measured in Z1 were smaller, reaching 13 ± 2Angstroem for the oxidations performed at 10 -6 Torr. (author)

Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

KAUST Repository

Mora Cordova, Angel; Khan, Kamran; El Sayed, Tamer

2014-01-01

Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show

Role of plasma activation in tailoring the nanostructure of multifunctional oxides thin films

Energy Technology Data Exchange (ETDEWEB)

Giangregorio, Maria M.; Losurdo, Maria; Capezzuto, Pio [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy)], E-mail: giovanni.bruno@ba.imip.cnr.it

2009-03-01

Potential of O{sub 2} remote plasmas for improving structural, morphological and optical properties of various multifunctional oxides thin films both during plasma assisted growth as well as by post-growth treatments is discussed. In particular, an O{sub 2} remote plasma metalorganic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological and optical properties of Er{sub 2}O{sub 3} and ZnO films. Furthermore, post-growth room-temperature remote O{sub 2} plasma treatments of indium-tin-oxides (ITO) films are demonstrated to be effective in improving morphology of ITO films.

Thermal stability of pulsed laser deposited iridium oxide thin films at low oxygen atmosphere

Science.gov (United States)

Gong, Yansheng; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng

2013-11-01

Iridium oxide (IrO2) thin films have been regarded as a leading candidate for bottom electrode and diffusion barrier of ferroelectric capacitors, some process related issues need to be considered before integrating ferroelectric capacitors into memory cells. This paper presents the thermal stability of pulsed laser deposited IrO2 thin films at low oxygen atmosphere. Emphasis was given on the effect of post-deposition annealing temperature at different oxygen pressure (PO2) on the crystal structure, surface morphology, electrical resistivity, carrier concentration and mobility of IrO2 thin films. The results showed that the thermal stability of IrO2 thin films was strongly dependent on the oxygen pressure and annealing temperature. IrO2 thin films can stably exist below 923 K at PO2 = 1 Pa, which had a higher stability than the previous reported results. The surface morphology of IrO2 thin films depended on PO2 and annealing temperature, showing a flat and uniform surface for the annealed films. Electrical properties were found to be sensitive to both the annealing temperature and oxygen pressure. The room-temperature resistivity of IrO2 thin films with a value of 49-58 μΩ cm increased with annealing temperature at PO2 = 1 Pa. The thermal stability of IrO2 thin films as a function of oxygen pressure and annealing temperature was almost consistent with thermodynamic calculation.

Evaluation of some non-toxic thiadiazole derivatives as bronze corrosion inhibitors in aqueous solution

International Nuclear Information System (INIS)

Varvara, Simona; Muresan, Liana Maria; Rahmouni, Kamal; Takenouti, Hisasi

2008-01-01

The inhibiting effect of four innoxious thiadiazole derivatives (2-mercapto-5-amino-1,3,4-thiadiazole (MAT), 2-mercapto-5-acetylamino-1,3,4-thiadiazole (MAcAT), 2-mercapto-5-methyl-1,3,4-thiadiazole (MMeT) and 2-mercapto-5-phenylamino-1,3,4-thiadiazole (MPhAT)) on bronze corrosion in an aerated solution of 0.2 g L -1 Na 2 SO 4 + 0.2 g L -1 NaHCO 3 at pH 5 was studied by potentiodynamic voltammetry and electrochemical impedance spectroscopy. The corrosion parameters determined from the polarisation curves indicate that the addition of the investigated thiadiazole derivatives decreases both cathodic and anodic current densities, due to an inhibition of the corrosion process, through the adsorption of thiadiazoles on the bronze surface. The inhibiting effect of the investigated organic compounds appears to be more pronounced on the anodic process than on the cathodic one and, except for the case MPhAT, it is enhanced by the increases of the inhibitors' concentration. The adsorption of the thiadiazole derivatives on bronze was confirmed by the presence of the nitrogen atoms in the EDX spectra of the bronze exposed to inhibitor-containing solutions. The magnitude of polarisation resistance values and, consequently, the inhibition efficiencies are influenced by the molecular structure of thiadiazole derivatives. The strongest inhibition was noticed in the presence of compounds with phenyl amino- or amino-functionalities in their molecules. The maximum protection efficiencies were obtained by addition of: 5 mM MAT (95.9%), 1 mM MAcAT (95.7%), 5 mM MMeT (92.6%) and 0.1 mM MPhAT (97%). EIS measurements also revealed that the inhibitor effectiveness of the optimal concentrations of thiadiazole is time-dependent

Evaluation of some non-toxic thiadiazole derivatives as bronze corrosion inhibitors in aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Varvara, Simona [Department of Topography, ' 1 Decembrie 1918' University, 11-13 Nicolae Iorga Street, 510009 Alba Iulia (Romania); Muresan, Liana Maria [Department of Physical Chemistry, ' Babes-Bolyai' University, 11 Arany-Janos Street, 400028 Cluj-Napoca (Romania)], E-mail: limur@chem.ubbcluj.ro; Rahmouni, Kamal; Takenouti, Hisasi [UPMC LISE - UPR 15 of the CNRS, ' Pierre and Marie Curie' University, Paris (France)

2008-09-15

The inhibiting effect of four innoxious thiadiazole derivatives (2-mercapto-5-amino-1,3,4-thiadiazole (MAT), 2-mercapto-5-acetylamino-1,3,4-thiadiazole (MAcAT), 2-mercapto-5-methyl-1,3,4-thiadiazole (MMeT) and 2-mercapto-5-phenylamino-1,3,4-thiadiazole (MPhAT)) on bronze corrosion in an aerated solution of 0.2 g L{sup -1} Na{sub 2}SO{sub 4} + 0.2 g L{sup -1} NaHCO{sub 3} at pH 5 was studied by potentiodynamic voltammetry and electrochemical impedance spectroscopy. The corrosion parameters determined from the polarisation curves indicate that the addition of the investigated thiadiazole derivatives decreases both cathodic and anodic current densities, due to an inhibition of the corrosion process, through the adsorption of thiadiazoles on the bronze surface. The inhibiting effect of the investigated organic compounds appears to be more pronounced on the anodic process than on the cathodic one and, except for the case MPhAT, it is enhanced by the increases of the inhibitors' concentration. The adsorption of the thiadiazole derivatives on bronze was confirmed by the presence of the nitrogen atoms in the EDX spectra of the bronze exposed to inhibitor-containing solutions. The magnitude of polarisation resistance values and, consequently, the inhibition efficiencies are influenced by the molecular structure of thiadiazole derivatives. The strongest inhibition was noticed in the presence of compounds with phenyl amino- or amino-functionalities in their molecules. The maximum protection efficiencies were obtained by addition of: 5 mM MAT (95.9%), 1 mM MAcAT (95.7%), 5 mM MMeT (92.6%) and 0.1 mM MPhAT (97%). EIS measurements also revealed that the inhibitor effectiveness of the optimal concentrations of thiadiazole is time-dependent.

Oxidation behavior of arc evaporated Al-Cr-Si-N thin films

Energy Technology Data Exchange (ETDEWEB)

Tritremmel, Christian; Daniel, Rostislav; Mitterer, Christian; Mayrhofer, Paul H.; Lechthaler, Markus; Polcik, Peter [Christian Doppler Laboratory for Advanced Hard Coatings, Department of Physical Metallurgy and Materials Testing, Montanuniversitaet Leoben, Franz-Josef-Strasse 18, A-8700 Leoben (Austria); Christian Doppler Laboratory for Application Oriented Coating Development, Department of Physical Metallurgy and Materials Testing, Montanuniversitaet Leoben, Franz-Josef-Strasse 18, A-8700 Leoben (Austria); OC Oerlikon Balzers AG, Iramali 18, LI-9496 Balzers (Liechtenstein); PLANSEE Composite Materials GmbH, Siebenbuergerstrasse 23, D-86983 Lechbruck am See (Germany)

2012-11-15

The impact of Al and Si on the oxidation behavior of Al-Cr-(Si)-N thin films synthesized by arc evaporation of powder metallurgically prepared Al{sub x}Cr{sub 1-x} targets with x = Al/(Al + Cr) of 0.5, 0.6, and 0.7 and (Al{sub 0.5}Cr{sub 0.5}){sub 1-z}Si{sub z} targets with Si contents of z = 0.05, 0.1, and 0.2 in N{sub 2} atmosphere was studied in detail by means of differential scanning calorimetry, thermogravimetric analysis (TGA), x-ray diffraction, and Raman spectroscopy. Dynamical measurements in synthetic air (up to 1440 Degree-Sign C) revealed the highest onset temperature of pronounced oxidation for nitride coatings prepared from the Al{sub 0.4}Cr{sub 0.4}Si{sub 0.2} target. Isothermal TGA at 1100, 1200, 1250, and 1300 Degree-Sign C highlight the pronounced improvement of the oxidation resistance of Al{sub x}Cr{sub 1-x}N coatings by the addition of Si. The results show that Si promotes the formation of a dense coating morphology as well as a dense oxide scale when exposed to air.

High mobility transparent conducting oxides for thin film solar cells

International Nuclear Information System (INIS)

Calnan, S.; Tiwari, A.N.

2010-01-01

A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

A Cuprous Oxide Thin Film Non-Enzymatic Glucose Sensor Using Differential Pulse Voltammetry and Other Voltammetry Methods and a Comparison to Different Thin Film Electrodes on the Detection of Glucose in an Alkaline Solution

Directory of Open Access Journals (Sweden)

Yifan Dai

2018-01-01

Full Text Available A cuprous oxide (Cu2O thin layer served as the base for a non-enzymatic glucose sensor in an alkaline medium, 0.1 NaOH solution, with a linear range of 50–200 mg/dL using differential pulse voltammetry (DPV measurement. An X-ray photoelectron spectroscopy (XPS study confirmed the formation of the cuprous oxide layer on the thin gold film sensor prototype. Quantitative detection of glucose in both phosphate-buffered saline (PBS and undiluted human serum was carried out. Neither ascorbic acid nor uric acid, even at a relatively high concentration level (100 mg/dL in serum, interfered with the glucose detection, demonstrating the excellent selectivity of this non-enzymatic cuprous oxide thin layer-based glucose sensor. Chronoamperometry and single potential amperometric voltammetry were used to verify the measurements obtained by DPV, and the positive results validated that the detection of glucose in a 0.1 M NaOH alkaline medium by DPV measurement was effective. Nickel, platinum, and copper are commonly used metals for non-enzymatic glucose detection. The performance of these metal-based sensors for glucose detection using DPV were also evaluated. The cuprous oxide (Cu2O thin layer-based sensor showed the best sensitivity for glucose detection among the sensors evaluated.

Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

Science.gov (United States)

Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

2017-11-01

A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

Metal Adornments of Clothing and Headwear in the Bronze Age of Western Siberia (issues of research and reconstruction ..

Directory of Open Access Journals (Sweden)

Umerenkova Olga V.

2017-09-01

Full Text Available The article considers issues related to the principals of scientific approach, methods and procedure of costume reconstruction on the basis of archaeological materials dating back to the Bronze Age discovered in the territory of Western Siberia. The costume is considered by researchers as one of the brightest manifestations of material culture. Its decoration provides multidisciplinary information containing elements of ideology and aesthetic norms together with traditions and social relationships. Reconstruction of clothing and headwear adornments in archaeological literature related to the Bronze Age is one of the understudied topics. Researchers use various sources for its recreation: archaeological materials, written historical, literature and folklore sources, and fine art items. A significant amount of source items has accumulated over the last decades, although the analysis and principles of processing thereof have not been sufficiently covered in special literature. In order to increase the informative capabilities of adornments as sources for the reconstruction of the Bronze Age costume, the author suggested a scheme of accounting for the location of adornments with respect to the remains of the buried when the excavations are documented. The article features the results of the author's reconstruction of women's headwear decoration with metal articles executed on the basis of Bronze Age materials.

Highly conductive grain boundaries in copper oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

2016-06-21

High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

International Nuclear Information System (INIS)

Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.

1998-01-01

Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices

Cold spraying of aluminum bronze on profiled submillimeter cermet structures formed by laser cladding

Science.gov (United States)

Ryashin, N. S.; Malikov, A. G.; Shikalov, V. S.; Gulyaev, I. P.; Kuchumov, B. M.; Klinkov, S. V.; Kosarev, V. F.; Orishich, A. M.

2017-10-01

The paper presents results of the cold spraying of aluminum bronze coatings on substrates profiled with WC/Ni tracks obtained by laser cladding. Reinforcing cermet frames shaped as grids with varied mesh sizes were clad on stainless steel substrates using a CO2 laser machine "Siberia" (ITAM SB RAS, Russia). As a result, surfaces/substrates with heterogeneous shape, composition, and mechanical properties were obtained. Aluminum bronze coatings were deposited from 5lF-NS powder (Oerlikon Metco, Switzerland) on those substrates using cold spraying equipment (ITAM SB RAS). Data of profiling, microstructure diagnostics, EDS analysis, and mechanical tests of obtained composites is reported. Surface relief of the sprayed coatings dependence on substrate structure has been demonstrated.

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.

Science.gov (United States)

Heo, Jae Sang; Jo, Jeong-Wan; Kang, Jingu; Jeong, Chan-Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck-In; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu

2016-04-27

The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) V(-1) s(-1), and a bias stability of ΔVTH IGZO TFTs.

NUMERICAL MODELING OF HARDENING OF UNINTERRUPTEDLY-CASTED BRONZE CASTING

Directory of Open Access Journals (Sweden)

E. I. Marukovich

2009-01-01

Full Text Available The three-dimensional numerical model for calculation of thermal fields during solidification of continuously casted bronze casting is developed. Coefficients of heat transfer on borders of calculation areas on the basis of the solution of inverse heat transfer conduction problem are determined. The analysis of thermal fields, depending on loop variables of drawing and the sizes of not cooled zone of crystallizer is curried out.

Bronze-mean hexagonal quasicrystal

Science.gov (United States)

Dotera, Tomonari; Bekku, Shinichi; Ziherl, Primož

2017-10-01

The most striking feature of conventional quasicrystals is their non-traditional symmetry characterized by icosahedral, dodecagonal, decagonal or octagonal axes. The symmetry and the aperiodicity of these materials stem from an irrational ratio of two or more length scales controlling their structure, the best-known examples being the Penrose and the Ammann-Beenker tiling as two-dimensional models related to the golden and the silver mean, respectively. Surprisingly, no other metallic-mean tilings have been discovered so far. Here we propose a self-similar bronze-mean hexagonal pattern, which may be viewed as a projection of a higher-dimensional periodic lattice with a Koch-like snowflake projection window. We use numerical simulations to demonstrate that a disordered variant of this quasicrystal can be materialized in soft polymeric colloidal particles with a core-shell architecture. Moreover, by varying the geometry of the pattern we generate a continuous sequence of structures, which provide an alternative interpretation of quasicrystalline approximants observed in several metal-silicon alloys.

Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yan [Key Laboratory of New Fiber Materials and Modern Textile, Qingdao University, 308 Ningxia Road, Qingdao 266071 (China); Yu, Jianqiang, E-mail: jianqyu@qdu.edu.cn [Key Laboratory of New Fiber Materials and Modern Textile, Qingdao University, 308 Ningxia Road, Qingdao 266071 (China); Sun, Kai; Zhu, Yukun [Key Laboratory of New Fiber Materials and Modern Textile, Qingdao University, 308 Ningxia Road, Qingdao 266071 (China); Bu, Yuyu; Chen, Zhuoyuan [National Engineering Center of Marine Corrosion Protection, Institute of Oceanology, Chinese Academy of Sciences, 7 Nanhai Road, Qingdao 266071 (China)

2014-05-01

Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel by In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.

Investigation of Thin Layered Cobalt Oxide Nano-Islands on Gold

Science.gov (United States)

Bajdich, Michal; Walton, Alex S.; Fester, Jakob; Arman, Mohammad A.; Osiecki, Jacek; Knudsen, Jan; Vojvodic, Aleksandra; Lauritsen, Jeppe V.

2015-03-01

Layered cobalt oxides have been shown to be highly active catalysts for the oxygen evolution reaction (OER), but the synergistic effect of contact with gold is yet to be fully understood. The synthesis of three distinct types of thin-layered cobalt oxide nano-islands supported on a single crystal gold (111) substrate is confirmed by combination of STM and XAS methods. In this work, we present DFT+U theoretical investigation of above nano-islands using several previously known structural models. Our calculations confirm stability of two low-oxygen pressure phases: (a) rock-salt Co-O bilayer and (b) wurtzite Co-O quadlayer and single high-oxygen pressure phase: (c) O-Co-O trilayer. The optimized geometries agree with STM structures and calculated oxidation states confirm the conversion from Co2+ to Co3+ found experimentally in XAS. The O-Co-O trilayer islands have the structure of a single layer of CoOOH proposed to be the true active phase for OER catalyst. For that reason, the effect of water on the Pourbaix stabilities of basal planes and edge sites is fully investigated. Lastly, we also present the corresponding OER theoretical overpotentials.

Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

Science.gov (United States)

Lu, Zihong

1995-01-01

The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

2017-01-01

The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

Optical constants and band edge of amorphous zinc oxide thin films

International Nuclear Information System (INIS)

Khoshman, Jebreel M.; Kordesch, Martin E.

2007-01-01

The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV

Influence of heating rates on in situ resistance measurements of a bronze route Nb-Sn-Cu-Ta multifilamentary conductor

International Nuclear Information System (INIS)

Tan, K.S.; Hopkins, S.C.; Glowacki, B.A.

2004-01-01

The superconducting properties of a bronze process multifilamentary conductor are controlled by the structure, dimensions and composition of the intermetallic layers, which are strongly influenced by the details of the heat treatments applied to the conductor. It has previously been reported that the electrical resistivity of a Vacuumschmelze bronze process conductor varies during heat treatment, and that analysis of the conductor as a set of parallel resistors allows the features of the resistivity variation to be assigned to the progress of Nb 3 Sn intermetallic phase formation. The behaviour of NSP2 Nb-Sn-Cu-Ta bronze process multifilamentary conductors (Imperial Metal Industries) is now reported as a function of the heating rate, in preparation for more complex non-isothermal heat treatment procedures. It is shown that the resistance of the wire measured in situ by an alternating current (AC) technique can be used to observe the progress of the formation of Nb 3 Sn, and that the comparison of resistometric measurements at different heating rates can give an indication of other processes (such as recovery and recrystallisation) occurring at lower temperatures during the heating up process prior to isothermal annealing. In addition, this wire containing only about 1% of copper was carefully chosen because of the broken tantalum barriers around individual copper filaments. Therefore, the resistometric measurements were used to attempt to detect the diffusion of tin from the bronze matrix into the copper filaments at lower temperatures without noticeable influence on Nb 3 Sn phase formation. Treating the NSP2 wire as a set of parallel resistors also permits estimates to be made of the intermetallic layer thicknesses from resistometric measurements, and these are shown to be in good agreement with estimates from scanning electron microscopy. The difference in critical temperature, T c , between wires heated at different rates, with the presence of the bronze matrix

Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

International Nuclear Information System (INIS)

Sammelselg, Väino; Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan

2013-01-01

Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H 2 SO 4 was studied. • Smallest etching rates of < 5 pm/s for TiO 2 , Al 2 O 3 , and Cr 2 O 3 were reached. • Highest etching rate of 2.8 nm/s for Al 2 O 3 was occurred. • Remarkable differences in etching of non- and crystalline films were observed

Memristive properties of transparent oxide semiconducting (Ti,Cu)O x -gradient thin film

Science.gov (United States)

Domaradzki, Jarosław; Kotwica, Tomasz; Mazur, Michał; Kaczmarek, Danuta; Wojcieszak, Damian

2018-01-01

The paper presents the results of the analysis of memristive properties observed in (Ti,Cu)-oxide thin film with gradient distribution of elements, prepared using the multi-source reactive magnetron co-sputtering process. The performed electrical measurements showed the presence of pinched hysteresis loops in the voltage-current plane for direct and alternating current bipolar periodic signal stimulation. Investigations performed using a transmission electron microscope equipped with an energy dispersive spectrometer showed that the elemental composition at the cross section of the thin film was very well correlated with the gradient V-shaped profile of the powering of the magnetron source equipped with a Cu target. The prepared samples were transparent in the visible part of optical radiation. The obtained results showed that the prepared gradient (Ti,Cu)O x thin film could be an interesting alternative to the conventional multilayer stack construction of memristive devices, which makes them a promising material for manufacturing transparent memory devices for transparent electronics.

Oxidation effects on the electric resistance of In and Al in thin layers

International Nuclear Information System (INIS)

Moncada, G.; Araya, J.; Clark, N.

1981-01-01

Measurements of electric resistance (R) in function of the time in evaporated samples of thin layers of In and Al trivalent elements in both vacuum and atmospheric pressure are reported. Measurements in samples at ambient and cooled with nitrogen temperatures taken place. The changes observed in R is attributed partly to changes in the sample surface produced by the oxidation. (L.C.) [pt

Copper and tin isotopic analysis of ancient bronzes for archaeological investigation: development and validation of a suitable analytical methodology.

Science.gov (United States)

Balliana, Eleonora; Aramendía, Maite; Resano, Martin; Barbante, Carlo; Vanhaecke, Frank

2013-03-01

Although in many cases Pb isotopic analysis can be relied on for provenance determination of ancient bronzes, sometimes the use of "non-traditional" isotopic systems, such as those of Cu and Sn, is required. The work reported on in this paper aimed at revising the methodology for Cu and Sn isotope ratio measurements in archaeological bronzes via optimization of the analytical procedures in terms of sample pre-treatment, measurement protocol, precision, and analytical uncertainty. For Cu isotopic analysis, both Zn and Ni were investigated for their merit as internal standard (IS) relied on for mass bias correction. The use of Ni as IS seems to be the most robust approach as Ni is less prone to contamination, has a lower abundance in bronzes and an ionization potential similar to that of Cu, and provides slightly better reproducibility values when applied to NIST SRM 976 Cu isotopic reference material. The possibility of carrying out direct isotopic analysis without prior Cu isolation (with AG-MP-1 anion exchange resin) was investigated by analysis of CRM IARM 91D bronze reference material, synthetic solutions, and archaeological bronzes. Both procedures (Cu isolation/no Cu isolation) provide similar δ (65)Cu results with similar uncertainty budgets in all cases (±0.02-0.04 per mil in delta units, k = 2, n = 4). Direct isotopic analysis of Cu therefore seems feasible, without evidence of spectral interference or matrix-induced effect on the extent of mass bias. For Sn, a separation protocol relying on TRU-Spec anion exchange resin was optimized, providing a recovery close to 100 % without on-column fractionation. Cu was recovered quantitatively together with the bronze matrix with this isolation protocol. Isotopic analysis of this Cu fraction provides δ (65)Cu results similar to those obtained upon isolation using AG-MP-1 resin. This means that Cu and Sn isotopic analysis of bronze alloys can therefore be carried out after a single chromatographic

Comment on "Tunable Design of Structural Colors Produced by Pseudo-1D Photonic Crystals of Graphene Oxide" and Thin-Film Interference from Dried Graphene Oxide Film.

Science.gov (United States)

Hong, Seung-Ho; Song, Jang-Kun

2017-04-01

The mechanism of the iridescent color reflection from dried thin graphene oxide (GO) film on Si wafer is clarified. Dissimilarly to the photonic crystalline reflection in aqueous GO dispersion, the color reflection in dried GO film originates from the thin film interference. The peak reflection can reach 23% by optimizing the GO thickness and the substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

2005-12-22

In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

Electrochemical zinc insertion into W18O49: Synthesis and characterization of new bronzes

International Nuclear Information System (INIS)

Martinez-de la Cruz, A.; Amador, U.; Rodriguez-Carvajal, J.; Garcia-Alvarado, F.

2005-01-01

Divalent zinc ions have been electrochemically inserted into W 18 O 49 , producing zinc bronzes. Under our experimental conditions, W 18 O 49 accepts zinc reversibly as a guest up to 0.9 ions per formula. The reaction seems to proceed through the formation of a solid solution in which the W-O framework of the parent oxide is maintained. The location of the Zn 2+ ions in the framework of W 18 O 49 has been determined by neutron diffraction on a chemically prepared sample having the composition Zn 0.34 W 18 O 49 . As a main result, we found that Zn prefers to insert in one of the four types of quadrangular tunnels. More precisely, it is displaced from the center to occupy a low coordination site. This result indicates that a significant covalent character exists in the Zn-O bond. - Graphical Abstract: The structure of Zn 0.36 W 18 O 49 projected along the b-axis

Host thin films incorporating nanoparticles

Science.gov (United States)

Qureshi, Uzma

The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

Photocatalytic Activity and Stability of Porous Polycrystalline ZnO Thin-Films Grown via a Two-Step Thermal Oxidation Process

Directory of Open Access Journals (Sweden)

James C. Moore

2014-08-01

Full Text Available The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole pair formation is of critical importance for self-cleaning and antimicrobial applications with these metal-oxide catalyst systems. In this study, ZnO thin films were fabricated on sapphire substrates via direct current sputter deposition of Zn-metal films followed by thermal oxidation at several annealing temperatures (300–1200 °C. Due to the ease with which they can be recovered, stabilized films are preferable to nanoparticles or colloidal suspensions for some applications. Characterization of the resulting ZnO thin films through atomic force microscopy and photoluminescence indicated that decreasing annealing temperature leads to smaller crystal grain size and increased UV excitonic emission. The photocatalytic activities were characterized by UV-visible absorption measurements of Rhodamine B dye concentrations. The films oxidized at lower annealing temperatures exhibited higher photocatalytic activity, which is attributed to the increased optical quality. Photocatalytic activity was also found to depend on film thickness, with lower activity observed for thinner films. Decreasing activity with use was found to be the result of decreasing film thickness due to surface etching.

Dynamic tensile behaviour and deformational mechanism of C5191 phosphor bronze under high strain rates deformation