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Sample records for oxide box interface

  1. ConductHome: Gesture Interface Control of Home Automation Boxes

    OpenAIRE

    J. Branstett; V. Gagneux; A. Leleu; B. Levadoux; J. Pascale

    2015-01-01

    This paper presents the interface ConductHome which controls home automation systems with a Leap Motion using "invariant gesture protocols". This interface is meant to simplify the interaction of the user with its environment. A hardware part allows the Leap Motion to be carried around the house. A software part interacts with the home automation box and displays the useful information for the user. An objective of this work is the development of a natural/invariant/simpl...

  2. Emergent Phenomena at Oxide Interfaces

    International Nuclear Information System (INIS)

    Hwang, H.Y.

    2012-01-01

    with T-operation. (iii) Gauge symmetry (G), which is associated with a change in the phase of the wave-function as Ψ → e iθ Ψ. Gauge symmetry is connected to the law of charge conservation, and broken G-symmetry corresponds to superconductivity/superfluidity. To summarize, the interplay among these electronic degrees of freedom produces various forms of symmetry breaking patterns of I, T, and G, leading to novel emergent phenomena, which can appear only by the collective behavior of electrons and cannot be expected from individual electrons. Figure 1 shows this schematically by means of several representative phenomena. From this viewpoint, the interfaces of TMOs offer a unique and important laboratory because I is already broken by the structure itself, and the detailed form of broken I-symmetry can often be designed. Also, two-dimensionality usually enhances the effects of electron correlations by reducing their kinetic energy. These two features of oxide interfaces produce many novel effects and functions that cannot be attained in bulk form. Given that the electromagnetic responses are a major source of the physical properties of solids, and new gauge structures often appear in correlated electronic systems, we put 'emergent electromagnetism' at the center of Fig. 1.

  3. In between matters, interfaces in complex oxides

    NARCIS (Netherlands)

    van Zalk, M.

    2009-01-01

    Complex oxides are emerging as a versatile class of materials, exhibiting a wide variety of properties. In recent years, it has become increasingly clear that the properties of complex-oxide interfaces can differ considerably from those of the bulk. This opens up the possibility of tuning and

  4. In Between Matters : Interfaces in Complex Oxides

    NARCIS (Netherlands)

    van Zalk, M.

    2009-01-01

    Complex oxides are emerging as a versatile class of materials, exhibiting a wide variety of properties. In recent years, it has become increasingly clear that the properties of complex-oxide interfaces can differ considerably from those of the bulk. This opens up the possibility of tuning and

  5. Engineering complex oxide interfaces for oxide electronics

    NARCIS (Netherlands)

    Roy, Saurabh

    2015-01-01

    A complex interplay of physics and chemistry in transition metal oxides determines their electronic, magnetic, and ferroic properties enabling a wide range of applications of these materials. BiFeO_3, a canonical multiferroic system exhibits the interesting feature of enhanced conductivity on

  6. The ATS Web Page Provides "Tool Boxes" for: Access Opportunities, Performance, Interfaces, Volume, Environments, "Wish List" Entry and Educational Outreach

    Science.gov (United States)

    1999-01-01

    This viewgraph presentation gives an overview of the Access to Space website, including information on the 'tool boxes' available on the website for access opportunities, performance, interfaces, volume, environments, 'wish list' entry, and educational outreach.

  7. Interfaces and nanostructures of oxide octahedral frameworks

    Directory of Open Access Journals (Sweden)

    Felip eSandiumenge

    2014-08-01

    Full Text Available In the past decade, the rich physics exhibited by solid interfaces combining octahedral framework structures of transition metal oxides has fascinated the materials science community. However, the behavior of these materials still elude the current understanding of classical semiconductor and metal epitaxy. The reason for that is rooted in the surprising versatility of linked coordination units to adapt to a dissimilar substrate and the strong sensitivity of correlated oxides to external perturbations. The confluence of atomic control in oxide thin film epitaxy, state of the art high spatial resolution characterization techniques, and electronic structure computations, has allowed in recent years to obtain first insights on the underlying microscopic mechanisms governing the epitaxy of these fascinating materials. Here, we shortly review these mechanisms and highlight their potential in the design of novel nanostructures with enhanced functionalities.

  8. Oxide Interfaces: emergent structure and dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Clarke, Roy [Univ. of Michigan, Ann Arbor, MI (United States)

    2016-08-16

    This Final Report describes the scientific accomplishments that have been achieved with support from grant DE-FG02-06ER46273 during the period 6/1/2012– 5/31/2016. The overall goals of this program were focused on the behavior of epitaxial oxide heterostructures at atomic length scales (Ångstroms), and correspondingly short time-scales (fs -ns). The results contributed fundamentally to one of the currently most active frontiers in condensed matter physics research, namely to better understand the intricate relationship between charge, lattice, orbital and spin degrees of freedom that are exhibited by complex oxide heterostructures. The findings also contributed towards an important technological goal which was to achieve a better basic understanding of structural and electronic correlations so that the unusual properties of complex oxides can be exploited for energy-critical applications. Specific research directions included: probing the microscopic behavior of epitaxial interfaces and buried layers; novel materials structures that emerge from ionic and electronic reconfiguration at epitaxial interfaces; ultrahigh-resolution mapping of the atomic structure of heterointerfaces using synchrotron-based x-ray surface scattering, including direct methods of phase retrieval; using ultrafast lasers to study the effects of transient strain on coherent manipulation of multi-ferroic order parameters; and investigating structural ordering and relaxation processes in real-time.

  9. Chemically abrupt interface between Ce oxide and Fe films

    International Nuclear Information System (INIS)

    Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

    2005-01-01

    A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

  10. Oxidative reduction of glove box wipers with a downdraft thermal oxidation system

    International Nuclear Information System (INIS)

    Phelps, M.R.; Wilcox, W.A.

    1996-04-01

    Wipers (rags) used for decontamination and glove box cleanup in the Plutonium Finishing Plant often become soaked with acid and plutonium-rich solutions. After use, these wipers are rinsed in a dilute NaOH solution and dried, but the formation of unstable nitrates and the hydrogen gas caused by hydrolysis are concerns that still must be addressed. This report gives the results of testing with a small downdraft thermal oxidation system that was constructed by Pacific Northwest National Laboratory to stabilize glove wiper waste, reduce the waste volume, and reclaim plutonium. Proof-of-principle testing was conducted with eight runs using various combinations of rag moisture and chemical pretreatment. All runs went to planned completion. Results of these tests indicate that the thermal oxidation system has the potential for providing significant reductions in waste volume. Weight reductions of 150:1 were easily obtainable during this project. Modifications could result in weight reductions of over 200:1, with possible volume reductions of 500:1

  11. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  12. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  13. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  14. Graphene Oxide flakes: methods and techniques for properties at interfaces

    OpenAIRE

    Paola, Zuppella; Sara, Zuccon; Marco, Nardello; Jody, Corso Alain; Simone, Silvestrini; Michele, Maggini; Guglielmina, Pelizzo Maria

    2014-01-01

    Graphene Oxide and reduced Graphene Oxide are intriguing materials for photonics and electronic devices both for intrinsic characteristics and as precursors for the synthesis of graphene. Whatever the application and the engineering purpose, a fine control of the chemical and physical properties is required since the performances of graphene based systems depend on the reduction state of Graphene Oxide and can be strongly affected by interfaces interactions and neighboring effects. Then, a me...

  15. Patterning of high mobility electron gases at complex oxide interfaces

    DEFF Research Database (Denmark)

    Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

    2015-01-01

    Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...

  16. Oxide interfaces with enhanced ion conductivity

    NARCIS (Netherlands)

    Leon, C.; Santamaria, J.; Boukamp, Bernard A.

    2013-01-01

    The new field of nano-ionics is expected to yield large improvements in the performance of oxide-based energy generation and storage devices based on exploiting size effects in ion conducting materials. The search for novel materials with enhanced ionic conductivity for application in energy devices

  17. Ionic conductivity in oxide heterostructures: the role of interfaces

    Directory of Open Access Journals (Sweden)

    Emiliana Fabbri, Daniele Pergolesi and Enrico Traversa

    2010-01-01

    Full Text Available Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

  18. The 2016 oxide electronic materials and oxide interfaces roadmap

    DEFF Research Database (Denmark)

    Lorenz, M.; Rao, M. S. Ramachandra; Venkatesan, T.

    2016-01-01

    of these materials to understand the tunability of their properties and the novel properties that evolve due to their nanostructured nature is another facet of the challenge. The research related to the oxide electronic field is at an impressionable stage, and this has motivated us to contribute with a roadmap......, Pentcheva, and Gegenwart. Finally, Miletto Granozio presents the European action ‘towards oxide-based electronics’ which develops an oxide electronics roadmap with emphasis on future nonvolatile memories and the required technologies.In summary, we do hope that this oxide roadmap appears as an interesting...

  19. Universal electrode interface for electrocatalytic oxidation of liquid fuels.

    Science.gov (United States)

    Liao, Hualing; Qiu, Zhipeng; Wan, Qijin; Wang, Zhijie; Liu, Yi; Yang, Nianjun

    2014-10-22

    Electrocatalytic oxidations of liquid fuels from alcohols, carboxylic acids, and aldehydes were realized on a universal electrode interface. Such an interface was fabricated using carbon nanotubes (CNTs) as the catalyst support and palladium nanoparticles (Pd NPs) as the electrocatalysts. The Pd NPs/CNTs nanocomposite was synthesized using the ethylene glycol reduction method. It was characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, voltammetry, and impedance. On the Pd NPs/CNTs nanocomposite coated electrode, the oxidations of those liquid fuels occur similarly in two steps: the oxidations of freshly chemisorbed species in the forward (positive-potential) scan and then, in the reverse scan (negative-potential), the oxidations of the incompletely oxidized carbonaceous species formed during the forward scan. The oxidation charges were adopted to study their oxidation mechanisms and oxidation efficiencies. The oxidation efficiency follows the order of aldehyde (formaldehyde) > carboxylic acid (formic acid) > alcohols (ethanol > methanol > glycol > propanol). Such a Pd NPs/CNTs nanocomposite coated electrode is thus promising to be applied as the anode for the facilitation of direct fuel cells.

  20. Metal/oxide/semiconductor interface investigated by monoenergetic positrons

    Science.gov (United States)

    Uedono, A.; Tanigawa, S.; Ohji, Y.

    1988-10-01

    Variable-energy positron-beam studies have been carried out for the first time on a metal/oxide/semiconductor (MOS) structure of polycrystalline Si/SiO 2/Si-substrate. We were successful in collecting injected positrons at the SiO 2/Si interface by the application of an electric field between the MOS electrodes.

  1. "Virtual shear box" experiments of stress and slip cycling within a subduction interface mélange

    Science.gov (United States)

    Webber, Sam; Ellis, Susan; Fagereng, Åke

    2018-04-01

    What role does the progressive geometric evolution of subduction-related mélange shear zones play in the development of strain transients? We use a "virtual shear box" experiment, based on outcrop-scale observations from an ancient exhumed subduction interface - the Chrystalls Beach Complex (CBC), New Zealand - to constrain numerical models of slip processes within a meters-thick shear zone. The CBC is dominated by large, competent clasts surrounded by interconnected weak matrix. Under constant slip velocity boundary conditions, models of the CBC produce stress cycling behavior, accompanied by mixed brittle-viscous deformation. This occurs as a consequence of the reorganization of competent clasts, and the progressive development and breakdown of stress bridges as clasts mutually obstruct one another. Under constant shear stress boundary conditions, the models show periods of relative inactivity punctuated by aseismic episodic slip at rapid rates (meters per year). Such a process may contribute to the development of strain transients such as slow slip.

  2. Surfaces and Interfaces of Magnetoelectric Oxide Systems

    Science.gov (United States)

    Cao, Shi

    Magnetoelectric materials Cr2O3, hexagonal LuFeO 3 and YbFeO3 are studied in this thesis. The surface of chromia (Cr2O3) has a surface electronic structure distinct from the bulk. Our work shows that placing a Cr2O3 single crystal into a single domain state will result in net Cr2O 3 spin polarization at the boundary, even in the presence of a gold overlayer. From the Cr 2p3/2 X-ray magnetic circular dichroism signal, there is clear evidence of interface polarization with overlayers of both Pd and Pt on chromia. Cobalt thin films on Cr2O3(0001) show larger magnetic contrast in magnetic force microscopy indicating enhancement of perpendicular anisotropy induced by Cr2O3. The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3(0001) surfaces has been investigated showing hole doping of few-layer graphene. Density functional theory calculations furthermore confirm the p-type nature of the graphene on top of chromia, and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. The surface termination and the nominal valence states for hexagonal LuFeO3 thin films were characterized. The stable surface terminates in a Fe-O layer. This is consistent wit the results of density functional calculations. The structural transition at about 1000 °C, from the hexagonal to the orthorhombic phase of LuFeO3, has been investigated in thin films of LuFeO3. The electronic structure for the conduction bands of both hexagonal and orthorhombic LuFeO3 thin films have been measured. Dramatic differences in both the spectral features and the linear dichroism are observed. We have also studied the ferrimagnetism in h-YbFeO3 by measuring the magnetization of Fe and Yb separately. The results directly show antialignment of magnetization of Yb and Fe ions in h-YbFeO3 at low temperature, with an exchange field on Yb of about 17 kOe. All ferrimagnets, by default, are magnetoelectrics. These findings directly

  3. Defect Engineering and Interface Phenomena in Tin Oxide

    KAUST Repository

    Albar, Arwa

    2017-04-05

    The advance in transparent electronics requires high-performance transparent conducting oxide materials. The microscopic properties of these materials are sensitive to the presence of defects and interfaces and thus fundamental understanding is required for materials engineering. In this thesis, first principles density functional theory is used to investigate the possibility of tuning the structural, electronic and magnetic properties of tin oxide by means of defects and interfaces. Our aim is to reveal unique properties and the parameters to control them as well as to explain the origin of unique phenomena in oxide materials. The stability of native defect in tin monoxide (SnO) under strain is investigated using formation energy calculations. We find that the conductivity (which is controlled by native defects) can be switched from p-type to either n-type or undoped semiconducting by means of applied pressure. We then target inducing magnetism in SnO by 3d transition metal doping. We propose that V doping is efficient to realize spin polarization at high temperature. We discuss different tin oxide interfaces. Metallic states are found to form at the SnO/SnO2 interface with electronic properties that depend on the interface terminations. The origin of these states is explained in terms of charge transfer caused by chemical bonding and band alignment. For the SnO/SnO2 heterostructure, we observe the formation of a two dimensional hole gas at the interface, which is surprising as it cannot be explained by the standard polar catastrophe model. Thus, we propose a charge density discontinuity model to explain our results. The model can be generalized to other polar-polar interfaces. Motivated by technological applications, the electronic and structural properties of the MgO (100)/SnO2 (110) interface are investigated. Depending on the interface termination, we observe the formation of a two dimensional electron gas or spin polarized hole gas. Aiming to identify further

  4. Oxide surfaces and metal/oxide interfaces studied by grazing incidence X-ray scattering

    Science.gov (United States)

    Renaud, Gilles

    Experimental determinations of the atomic structure of insulating oxide surfaces and metal/oxide interfaces are scarce, because surface science techniques are often limited by the insulating character of the substrate. Grazing incidence X-ray scattering (GIXS), which is not subject to charge effects, can provide very precise information on the atomic structure of oxide surfaces: roughness, relaxation and reconstruction. It is also well adapted to analyze the atomic structure, the registry, the misfit relaxation, elastic or plastic, the growth mode and the morphology of metal/oxide interfaces during their growth, performed in situ. GIXS also allows the analysis of thin films and buried interfaces, in a non-destructive way, yielding the epitaxial relationships, and, by variation of the grazing incidence angle, the lattice parameter relaxation along the growth direction. On semi-coherent interfaces, the existence of an ordered network of interfacial misfit dislocations can be demonstrated, its Burger's vector determined, its ordering during in situ annealing cycles followed, and sometimes even its atomic structure can be addressed. Careful analysis during growth allows the modeling of the dislocation nucleation process. This review emphasizes the new information that GIXS can bring to oxide surfaces and metal/oxide interfaces by comparison with other surface science techniques. The principles of X-ray diffraction by surfaces and interfaces are recalled, together with the advantages and properties of grazing angles. The specific experimental requirements are discussed. Recent results are presented on the determination of the atomic structure of relaxed or reconstructed oxide surfaces. A description of results obtained during the in situ growth of metal on oxide surfaces is also given, as well as investigations of thick metal films on oxide surfaces, with lattice parameter misfit relaxed by an array of dislocations. Recent work performed on oxide thin films having

  5. Theory of the Spin Galvanic Effect at Oxide Interfaces

    Science.gov (United States)

    Seibold, Götz; Caprara, Sergio; Grilli, Marco; Raimondi, Roberto

    2017-12-01

    The spin galvanic effect (SGE) describes the conversion of a nonequilibrium spin polarization into a transverse charge current. Recent experiments have demonstrated a large conversion efficiency for the two-dimensional electron gas formed at the interface between two insulating oxides, LaAlO3 and SrTiO3 . Here, we analyze the SGE for oxide interfaces within a three-band model for the Ti t2 g orbitals which displays an interesting variety of effective spin-orbit couplings in the individual bands that contribute differently to the spin-charge conversion. Our analytical approach is supplemented by a numerical treatment where we also investigate the influence of disorder and temperature, which turns out to be crucial to providing an appropriate description of the experimental data.

  6. Transition metal oxide as anode interface buffer for impedance spectroscopy

    Science.gov (United States)

    Xu, Hui; Tang, Chao; Wang, Xu-Liang; Zhai, Wen-Juan; Liu, Rui-Lan; Rong, Zhou; Pang, Zong-Qiang; Jiang, Bing; Fan, Qu-Li; Huang, Wei

    2015-12-01

    Impedance spectroscopy is a strong method in electric measurement, which also shows powerful function in research of carrier dynamics in organic semiconductors when suitable mathematical physical models are used. Apart from this, another requirement is that the contact interface between the electrode and materials should at least be quasi-ohmic contact. So in this report, three different transitional metal oxides, V2O5, MoO3 and WO3 were used as hole injection buffer for interface of ITO/NPB. Through the impedance spectroscopy and PSO algorithm, the carrier mobilities and I-V characteristics of the NPB in different devices were measured. Then the data curves were compared with the single layer device without the interface layer in order to investigate the influence of transitional metal oxides on the carrier mobility. The careful research showed that when the work function (WF) of the buffer material was just between the work function of anode and the HOMO of the organic material, such interface material could work as a good bridge for carrier injection. Under such condition, the carrier mobility measured through impedance spectroscopy should be close to the intrinsic value. Considering that the HOMO (or LUMO) of most organic semiconductors did not match with the work function of the electrode, this report also provides a method for wide application of impedance spectroscopy to the research of carrier dynamics.

  7. First principles studies of complex oxide surfaces and interfaces

    International Nuclear Information System (INIS)

    Noguera, Claudine; Finocchi, Fabio; Goniakowski, Jacek

    2004-01-01

    Oxides enter our everyday life and exhibit an impressive variety of physical and chemical properties. The understanding of their behaviour, which is often determined by the electronic and atomic structures of their surfaces and interfaces, is a key question in many fields, such as geology, environmental chemistry, catalysis, thermal coatings, microelectronics, and bioengineering. In the last decade, first principles methods, mainly those based on the density functional theory, have been frequently applied to study complex oxide surfaces and interfaces, complementing the experimental observations. In this work, we discuss some of these contributions, with emphasis on several issues that are especially important when dealing with oxides: the local electronic structure at interfaces, and its connection with chemical reactivity; the charge redistribution and the bonding variations, in relation to screening properties; and the possibility of bridging the gap between model and real systems by taking into account the chemical environments and the effect of finite temperatures, and by performing simulations on systems of an adequate (large) size

  8. Enhancing CO2 Electroreduction with the Metal-Oxide Interface.

    Science.gov (United States)

    Gao, Dunfeng; Zhang, Yi; Zhou, Zhiwen; Cai, Fan; Zhao, Xinfei; Huang, Wugen; Li, Yangsheng; Zhu, Junfa; Liu, Ping; Yang, Fan; Wang, Guoxiong; Bao, Xinhe

    2017-04-26

    The electrochemical CO 2 reduction reaction (CO 2 RR) typically uses transition metals as the catalysts. To improve the efficiency, tremendous efforts have been dedicated to tuning the morphology, size, and structure of metal catalysts and employing electrolytes that enhance the adsorption of CO 2 . We report here a strategy to enhance CO 2 RR by constructing the metal-oxide interface. We demonstrate that Au-CeO x shows much higher activity and Faradaic efficiency than Au or CeO x alone for CO 2 RR. In situ scanning tunneling microscopy and synchrotron-radiation photoemission spectroscopy show that the Au-CeO x interface is dominant in enhancing CO 2 adsorption and activation, which can be further promoted by the presence of hydroxyl groups. Density functional theory calculations indicate that the Au-CeO x interface is the active site for CO 2 activation and the reduction to CO, where the synergy between Au and CeO x promotes the stability of key carboxyl intermediate (*COOH) and thus facilitates CO 2 RR. Similar interface-enhanced CO 2 RR is further observed on Ag-CeO x , demonstrating the generality of the strategy for enhancing CO 2 RR.

  9. An investigation of the oxidized Ni/InAs interface

    International Nuclear Information System (INIS)

    Venter, A.; Botha, J.R.; Swart, H.C.; Naidoo, S.; Olivier, E.J.

    2009-01-01

    Ni was resistively deposited onto bulk InAs and subsequently oxidized in an O 2 atmosphere. The anneal temperature and time were 450 deg. C and 2.5 h, respectively. X-ray diffraction of the oxidized Ni/InAs sample revealed the formation of In 3 Ni 2 and In 2 O 3 on the front suggesting inter diffusion of In, Ni and O. NiO was not detected by X-ray diffraction. In a preliminary study, using glass as a substrate, NiO readily formed when using these oxidation parameters. Conductivity measurements of the oxidized Ni/InAs surface revealed a conducting front and insulating rear surface while TEM of the Ni/InAs interface revealed an intermediate amorphous diffusion zone between the 'oxidized' Ni layer and the bulk InAs. A closer investigation of the intermediate layer supports the X-ray diffraction results, suggesting compound formation due to diffusion of oxygen and nickel into the substrate, and out-diffusion of In and As from the bulk of the sample. AES was used to further elucidate these results.

  10. An investigation of the oxidized Ni/InAs interface

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300 (South Africa); Naidoo, S.; Olivier, E.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-01

    Ni was resistively deposited onto bulk InAs and subsequently oxidized in an O{sub 2} atmosphere. The anneal temperature and time were 450 deg. C and 2.5 h, respectively. X-ray diffraction of the oxidized Ni/InAs sample revealed the formation of In{sub 3}Ni{sub 2} and In{sub 2}O{sub 3} on the front suggesting inter diffusion of In, Ni and O. NiO was not detected by X-ray diffraction. In a preliminary study, using glass as a substrate, NiO readily formed when using these oxidation parameters. Conductivity measurements of the oxidized Ni/InAs surface revealed a conducting front and insulating rear surface while TEM of the Ni/InAs interface revealed an intermediate amorphous diffusion zone between the 'oxidized' Ni layer and the bulk InAs. A closer investigation of the intermediate layer supports the X-ray diffraction results, suggesting compound formation due to diffusion of oxygen and nickel into the substrate, and out-diffusion of In and As from the bulk of the sample. AES was used to further elucidate these results.

  11. Engineering magnetism at functional oxides interfaces: manganites and beyond.

    Science.gov (United States)

    Yi, Di; Lu, Nianpeng; Chen, Xuegang; Shen, Shengchun; Yu, Pu

    2017-11-08

    The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

  12. The involvement of wheat F-box protein gene TaFBA1 in the oxidative stress tolerance of plants.

    Directory of Open Access Journals (Sweden)

    Shu-Mei Zhou

    Full Text Available As one of the largest gene families, F-box domain proteins have been found to play important roles in abiotic stress responses via the ubiquitin pathway. TaFBA1 encodes a homologous F-box protein contained in E3 ubiquitin ligases. In our previous study, we found that the overexpression of TaFBA1 enhanced drought tolerance in transgenic plants. To investigate the mechanisms involved, in this study, we investigated the tolerance of the transgenic plants to oxidative stress. Methyl viologen was used to induce oxidative stress conditions. Real-time PCR and western blot analysis revealed that TaFBA1 expression was up-regulated by oxidative stress treatments. Under oxidative stress conditions, the transgenic tobacco plants showed a higher germination rate, higher root length and less growth inhibition than wild type (WT. The enhanced oxidative stress tolerance of the transgenic plants was also indicated by lower reactive oxygen species (ROS accumulation, malondialdehyde (MDA content and cell membrane damage under oxidative stress compared with WT. Higher activities of antioxidant enzymes, including superoxide dismutase (SOD, catalase (CAT, ascorbate peroxidase (APX and peroxidase (POD, were observed in the transgenic plants than those in WT, which may be related to the upregulated expression of some antioxidant genes via the overexpression of TaFBA1. In others, some stress responsive elements were found in the promoter region of TaFBA1, and TaFBA1 was located in the nucleus, cytoplasm and plasma membrane. These results suggest that TaFBA1 plays an important role in the oxidative stress tolerance of plants. This is important for understanding the functions of F-box proteins in plants' tolerance to multiple stress conditions.

  13. Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO{sub 2} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Jianqiu, E-mail: jianqiu@vt.edu [Department of Mechanical Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, VA 24061 (United States); Tea, Eric; Li, Guanchen [Department of Mechanical Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, VA 24061 (United States); Hin, Celine [Department of Mechanical Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, VA 24061 (United States); Department of Material Science and Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road-MC 0238, Blacksburg, VA 24061 (United States)

    2017-06-01

    Highlights: • Hydrogen release process at the Al/SiO{sub 2} metal-oxide interface has been investigated. • A mathematical model that estimates the hydrogen release potential has been proposed. • Al atoms, Al−O bonds, and Si−Al bonds are the major hydrogen traps at the Al/SiO{sub 2} interface. • Hydrogen atoms are primarily release from Al−H and O−H bonds at the Al/SiO{sub 2} metal-oxide interface. - Abstract: The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible for the generation of defects, that traps charge carriers and can induce dielectric breakdown in Metal-Oxide-Semiconductor Field Effect Transistors. The AHR has been extensively studied at Si/SiO{sub 2} interfaces but its characteristics at metal-silica interfaces remain unclear. In this study, we performed Density Functional Theory (DFT) calculations to study the hydrogen release mechanism at the typical Al/SiO{sub 2} metal-oxide interface. We found that interstitial hydrogen atoms can break interfacial Al−Si bonds, passivating a Si sp{sup 3} orbital. Interstitial hydrogen atoms can also break interfacial Al−O bonds, or be adsorbed at the interface on aluminum, forming stable Al−H−Al bridges. We showed that hydrogenated O−H, Si−H and Al−H bonds at the Al/SiO{sub 2} interfaces are polarized. The resulting bond dipole weakens the O−H and Si−H bonds, but strengthens the Al−H bond under the application of a positive bias at the metal gate. Our calculations indicate that Al−H bonds and O−H bonds are more important than Si−H bonds for the hydrogen release process.

  14. Origin of interface states and oxide charges generated by ionizing radiation

    International Nuclear Information System (INIS)

    Sah, C.T.

    1976-01-01

    The randomly located trivalent silicon atoms are shown to account for the thermally generated interface states at the SiO 2 -Si interface. The interface state density is greatly reduced in water containing ambients at low temperatures (450 0 C) by forming trivalent silicon hydroxide bonds. Interface states are regenerated when the /triple bond/Si-OH bonds are broken by ionizing radiation and the OH ions are drifted away. In the bulk of the oxide film, the trivalent silicon and the interstitial oxygen donor centers are shown to be responsible for the heat and radiation generated positive space charge build-up (oxide charge) in thermally grown silicon oxide

  15. Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

    CERN Document Server

    Tarnavskij, G A; Obrekht, M S

    2001-01-01

    One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

  16. Segregation across the metal/oxide interface occurring during oxidation at high temperatures of diluted iron based alloys

    International Nuclear Information System (INIS)

    Geneve, D.; Rouxel, D.; Weber, B.; Confente, M.

    2006-01-01

    Industrial steels being elaborated in air at high temperature oxidize and cover with a complex oxide layer. The oxidation reaction drastically alters the surface composition. Such modifications have been investigated, in this work, by Auger Electron Spectroscopy (AES) using an original method to characterize the composition of the metal/oxide interfaces. Analysis of the concentration gradients across the interfaces allows to better understand how the alloy elements contribute to the oxidation process. The development of new alloy phases, the interdependencies between elements and the diffusion of different species are discussed considering thermodynamic properties of each element

  17. Oxide nanoparticles in an Al-alloyed oxide dispersion strengthened steel: crystallographic structure and interface with ferrite matrix

    DEFF Research Database (Denmark)

    Zhang, Zhenbo; Pantleon, Wolfgang

    2017-01-01

    Oxide nanoparticles are quintessential for ensuring the extraordinary properties of oxide dispersion strengthened (ODS) steels. In this study, the crystallographic structure of oxide nanoparticles, and their interface with the ferritic steel matrix in an Al-alloyed ODS steel, i.e. PM2000, were...

  18. Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

    1993-01-01

    We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

  19. High-energy photoemission studies of oxide interfaces

    Science.gov (United States)

    Claessen, Ralph

    2015-03-01

    The interfaces of complex oxide heterostructures can host novel quantum phases not existing in the bulk of the constituents, with the high-mobility 2D electron system (2DES) in LaAlO3/SrTiO3 (LAO/STO) representing a prominent example. Despite extensive research the origin of the 2DES and its unusual properties - including the supposed coexistence of superconductivity and ferromagnetism - are still a matter of intense debate. Photoelectron spectroscopy, recently extended into the soft (SX-ARPES) and hard (HAXPES) X-ray regime, is a powerful method to provide detailed insight into the electronic structure of these heterostructures and, in particular, of the buried interface. This includes the identification of the orbital character of the 2DES as well as the determination of vital band structure information, such as band alignment, band bending, and even k-resolved band dispersions and Fermi surface topology. Moreover, resonant photoemission at the Ti L-edge reveals the existence of two different species of Ti 3d states, localized and itinerant, which can be distinguished and identified by their different resonance behavior. The role of oxygen vacancies is studied by controlled in-situ oxidation, which allows us to vary the composition from fully stoichiometric to strongly O-deficient. By comparison to free STO surfaces we can thus demonstrate that the metallicity of the heteointerfaces is intrinsic, i . e . it persists even in the absence of O defects. I will discuss our photoemission results on LAO/STO heterostructures in both (100) and (111) orientation as well as on the related system γ-Al2O3/STO(100), which also hosts a 2DES with an even higher mobility. Work in collaboration with J. Mannhart (MPI-FKF, Stuttgart), N. Pryds (TU Denmark), G. Rijnders (U Twente), S. Suga (U Osaka), M. Giorgoi (BESSY, HZB), W. Drube (DESY Photon Science), V.N. Strocov (Swiss Light Source), J. Denlinger (Advanced Light Source, LBNL), and T.-L. Lee (Diamond Light Source). Support by

  20. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Science.gov (United States)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-08-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕinterface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  1. Direct plutonium oxide reduction/electrorefining interface program

    International Nuclear Information System (INIS)

    Baldwin, C.E.; Berry, J.W.; Giebel, R.E.; Long, J.L.; Moser, W.S.; Navratil, J.D.; Tibbitts, S.F.

    1986-01-01

    Research test work and production data evaluation were performed by the Direct Oxide Reduction (DOR)/Electrorefining (ER) Interface Task Team to determine the cause for poor efficiency and yields during ER of DOR metal product. Production data and preliminary test results provided a working hypothesis. Extremely high loadings of impurities (whatever their exact source and identity) in the DOR product metal may lead to failure of the metal to become a molten anode at ER operating temperatures. Moderate impurity levels permit attainment of a molten anode, but lead to low yields because of premature anode solidification. The test results did not conclusively prove the hypothesis or identify specific mechanisms, but were qualitatively supportive. By stirring the molten anode metal pool, as well as the molten salt phase, generally good ER runs were obtained with both DOR and non-DOR feeds. These limited preliminary results suggest that anode stirring decreases the sensitivity of the ER process to DOR-related impurities. Suggested corrective measures included: (1) minimizing impurities in DOR feed to ER and (2) continued evaluation of anode stirring along with run termination by back-EMF measurements. 1 ref., 3 figs., 13 tabs

  2. Non-uniform Solute Segregation at Semi-Coherent Metal/Oxide Interfaces

    Science.gov (United States)

    Choudhury, Samrat; Aguiar, Jeffery A.; Fluss, Michael J.; Hsiung, Luke L.; Misra, Amit; Uberuaga, Blas P.

    2015-08-01

    The properties and performance of metal/oxide nanocomposites are governed by the structure and chemistry of the metal/oxide interfaces. Here we report an integrated theoretical and experimental study examining the role of interfacial structure, particularly misfit dislocations, on solute segregation at a metal/oxide interface. We find that the local oxygen environment, which varies significantly between the misfit dislocations and the coherent terraces, dictates the segregation tendency of solutes to the interface. Depending on the nature of the solute and local oxygen content, segregation to misfit dislocations can change from attraction to repulsion, revealing the complex interplay between chemistry and structure at metal/oxide interfaces. These findings indicate that the solute chemistry at misfit dislocations is controlled by the dislocation density and oxygen content. Fundamental thermodynamic concepts - the Hume-Rothery rules and the Ellingham diagram - qualitatively predict the segregation behavior of solutes to such interfaces, providing design rules for novel interfacial chemistries.

  3. Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

    Directory of Open Access Journals (Sweden)

    H. J. Harsan Ma

    2015-08-01

    Full Text Available The two-dimensional electron gas (2DEG formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO and non-polar SrTiO3 (STO. Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

  4. Oxidation-resistant interface coatings for Nicalon/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Stinton, D.P.; Besmann, T.M.; Lowden, R.A. [Oak Ridge National Lab., TN (United States); Liaw, P.K.; Shanmugham, S. [Univ. of Tennessee, Knoxville, TN (United States)

    1997-12-01

    Nicalon/SiC composites with thin C and C/oxide/C interfaces were fabricated. The oxide layers, mullite and Al{sub 2}O{sub 3}-TiO{sub 2}, were deposited by a sol-gel process, while the C layer was deposited by a chemical vapor infiltration method. The fabricated composites were flexure tested in both as-processed and oxidized conditions. Composites with C and C/oxide/C interfaces retained graceful failure even after 500 h oxidation at 1000 C, but with reduced flexural strengths.

  5. Analysis of polymer/oxide interfaces under ambient conditions - An experimental perspective

    Science.gov (United States)

    González-Orive, A.; Giner, I.; de los Arcos, T.; Keller, A.; Grundmeier, G.

    2018-06-01

    In many different hybrid materials and materials composites polymers adhere to bulk oxides or oxide covered metal. The formed polymer/oxide interfaces are of crucial importance for the functionality and durability of such complex materials. Especially, under humid and corrosive conditions such interfaces tend to degrade due to permeability of polymers for water, the high adsorption energy of water on oxide surfaces and even corrosion processes of the metal. Different experimental studies considered such interfaces ranging from spectroscopy to electrochemical analysis. However, it is still a challenge to understand the complex interaction especially under non-ideal ambient conditions. The perspective article presents an overview on the existing experimental approaches and considers most recent experimental developments with regard to their potential applications in the area of polymer/oxide interfaces in the future.

  6. Oxide nanoparticles in an Al-alloyed oxide dispersion strengthened steel: crystallographic structure and interface with ferrite matrix

    Science.gov (United States)

    Zhang, Zhenbo; Pantleon, Wolfgang

    2017-07-01

    Oxide nanoparticles are quintessential for ensuring the extraordinary properties of oxide dispersion strengthened (ODS) steels. In this study, the crystallographic structure of oxide nanoparticles, and their interface with the ferritic steel matrix in an Al-alloyed ODS steel, i.e. PM2000, were systematically investigated by high-resolution transmission electron microscopy. The majority of oxide nanoparticles were identified to be orthorhombic YAlO3. During hot consolidation and extrusion, they develop a coherent interface and a near cuboid-on-cube orientation relationship with the ferrite matrix in the material. After annealing at 1200 °C for 1 h, however, the orientation relationship between the oxide nanoparticles and the matrix becomes arbitrary, and their interface mostly incoherent. Annealing at 1300 °C leads to considerable coarsening of oxide nanoparticles, and a new orientation relationship of pseudo-cube-on-cube between oxide nanoparticles and ferrite matrix develops. The reason for the developing interfaces and orientation relationships between oxide nanoparticles and ferrite matrix under different conditions is discussed.

  7. Oxidation-resistant interface coatings for SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Stinton, D.P.; Kupp, E.R.; Hurley, J.W.; Lowden, R.A. [Oak Ridge National Lab., TN (United States)] [and others

    1996-08-01

    The characteristics of the fiber-matrix interfaces in ceramic matrix composites control the mechanical behavior of these composites. Finite element modeling (FEM) was performed to examine the effect of interface coating modulus and coefficient of thermal expansion on composite behavior. Oxide interface coatings (mullite and alumina-titania) produced by a sol-gel method were chosen for study as a result of the FEM results. Amorphous silicon carbide deposited by chemical vapor deposition (CVD) is also being investigated for interface coatings in SiC-matrix composites. Processing routes for depositing coatings of these materials were developed. Composites with these interfaces were produced and tested in flexure both as-processed and after oxidation to examine the suitability of these materials as interface coatings for SiC/SiC composites in fossil energy applications.

  8. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    OpenAIRE

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ_ with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  9. Evaluation of wet air oxidation variables for removal of organophosphorus pesticide malathion using Box-Behnken design.

    Science.gov (United States)

    Isgoren, Melike; Gengec, Erhan; Veli, Sevil

    2017-02-01

    This paper deals with finding optimum reaction conditions for wet air oxidation (WAO) of malathion aqueous solution, by Response Surface Methodology. Reaction conditions, which affect the removal efficiencies most during the non-catalytic WAO system, are: temperature (60-120 °C), applied pressure (20-40 bar), the pH value (3-7), and reaction time (0-120 min). Those were chosen as independent parameters of the model. The interactions between parameters were evaluated by Box-Behnken and the quadratic model fitted very well with the experimental data (29 runs). A higher value of R 2 and adjusted R 2 (>0.91) demonstrated that the model could explain the results successfully. As a result, optimum removal efficiency (97.8%) was obtained at pH 5, 20 bars of pressure, 116 °C, and 96 min. These results showed that Box-Behnken is a suitable design to optimize operating conditions and removal efficiency for non-catalytic WAO process. The EC 20 value of raw wastewater was measured as 35.40% for malathion (20 mg/L). After the treatment, no toxicity was observed at the optimum reaction conditions. The results show that the WAO is an efficient treatment system for malathion degradation and has the ability of converting malathion to the non-toxic forms.

  10. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

    International Nuclear Information System (INIS)

    Angermann, Heike

    2014-01-01

    Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D it (E), and density D it,min of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly based on

  11. Open-Box Muscle-Computer Interface: Introduction to Human-Computer Interactions in Bioengineering, Physiology, and Neuroscience Courses

    Science.gov (United States)

    Landa-Jiménez, M. A.; González-Gaspar, P.; Pérez-Estudillo, C.; López-Meraz, M. L.; Morgado-Valle, C.; Beltran-Parrazal, L.

    2016-01-01

    A Muscle-Computer Interface (muCI) is a human-machine system that uses electromyographic (EMG) signals to communicate with a computer. Surface EMG (sEMG) signals are currently used to command robotic devices, such as robotic arms and hands, and mobile robots, such as wheelchairs. These signals reflect the motor intention of a user before the…

  12. Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

    Science.gov (United States)

    Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

    2015-05-26

    Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

  13. Field-induced resistance switching at metal/perovskite manganese oxide interface

    International Nuclear Information System (INIS)

    Ohkubo, I.; Tsubouchi, K.; Harada, T.; Kumigashira, H.; Itaka, K.; Matsumoto, Y.; Ohnishi, T.; Lippmaa, M.; Koinuma, H.; Oshima, M.

    2008-01-01

    Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its maximum of 1000. This resistance switching occurs around the interface between Al electrodes and epitaxial perovskite manganese oxide thin films

  14. Characterization of lead zirconate titanate (PZT)--indium tin oxide (ITO) thin film interface

    International Nuclear Information System (INIS)

    Sreenivas, K.; Sayer, M.; Laursen, T.; Whitton, J.L.; Pascual, R.; Johnson, D.J.; Amm, D.T.

    1990-01-01

    In this paper the interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle x-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITP layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films

  15. Topological properties and functionalities in oxide thin films and interfaces

    Science.gov (United States)

    Uchida, Masaki; Kawasaki, Masashi

    2018-04-01

    As symbolized by the Nobel Prize in Physics 2016, ‘topology’ has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of studies for oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials by sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties.

  16. Manganese Driven Carbon Oxidation along Oxic-Anoxic Interfaces in Forest Soils

    Science.gov (United States)

    Jones, M. E.; Keiluweit, M.

    2017-12-01

    Soils are the largest and most dynamic terrestrial carbon pool, storing a total of 3000 Pg of C - more than the atmosphere and biosphere combined. Because microbial oxidation determines the proportion of carbon that is either stored in the soil or emitted as climate active CO2, its rate directly impacts the global carbon cycle. Recently, a strong correlation between oxidation rates and manganese (Mn) content has been observed in forest soils globally, leading researchers conclude that Mn "is the single main factor governing" the oxidation of plant-derived particulate organic carbon (POC). Many soils are characterized by steep oxygen gradients, forming oxic-anoxic transitions that enable rapid redox cycling of Mn. Oxic-anoxic interfaces have been shown to promote fungal Mn oxidation and the formation of ligand-stabilized Mn(III), which ranks second only to superoxide as the most powerful oxidizing agent in the environment. Here we examined fungal Mn(III) formation along redox gradients in forest soils and their impact on POC oxidation rates. In both field and laboratory settings, oxic-anoxic transition zones showed the greatest Mn(III) concentrations, along with enhanced fungal growth, oxidative potential, production of soluble oxidation products, and CO2 production. Additional electrochemical and X-ray (micro)spectroscopic analyses indicated that oxic-anoxic interfaces represent ideal niches for fungal Mn(III) formation, owing to the ready supply of Mn(II), ligands and O2. Combined, our results suggest that POC oxidation relies on fungal Mn cycling across oxic-anoxic interfaces to produce Mn(III) based oxidants. Because predicted changes in the frequency and timing of precipitation dramatically alter soil moisture regimes in forest soils, understanding the mechanistic link between Mn cycling and carbon oxidation along oxic-anoxic interfaces is becoming increasingly important.

  17. From Two-Phase to Three-Phase: The New Electrochemical Interface by Oxide Electrocatalysts

    Science.gov (United States)

    Xu, Zhichuan J.

    2018-03-01

    Electrochemical reactions typically occur at the interface between a solid electrode and a liquid electrolyte. The charge exchange behaviour between these two phases determines the kinetics of electrochemical reactions. In the past few years, significant advances have been made in the development of metal oxide electrocatalysts for fuel cell and electrolyser reactions. However, considerable gaps remain in the fundamental understanding of the charge transfer pathways and the interaction between the metal oxides and the conducting substrate on which they are located. In particular, the electrochemical interfaces of metal oxides are significantly different from the traditional (metal) ones, where only a conductive solid electrode and a liquid electrolyte are considered. Oxides are insulating and have to be combined with carbon as a conductive mediator. This electrode configuration results in a three-phase electrochemical interface, consisting of the insulating oxide, the conductive carbon, and the liquid electrolyte. To date, the mechanistic insights into this kind of non-traditional electrochemical interface remain unclear. Consequently conventional electrochemistry concepts, established on classical electrode materials and their two-phase interfaces, are facing challenges when employed for explaining these new electrode materials. [Figure not available: see fulltext.

  18. A grey box model of glucose fermentation and syntrophic oxidation in microbial fuel cells.

    Science.gov (United States)

    de Los Ángeles Fernandez, Maria; de Los Ángeles Sanromán, Maria; Marks, Stanislaw; Makinia, Jacek; Gonzalez Del Campo, Araceli; Rodrigo, Manuel; Fernandez, Francisco Jesus

    2016-01-01

    In this work, the fermentative and oxidative processes taking place in a microbial fuel cell (MFC) fed with glucose were studied and modeled. The model accounting for the bioelectrochemical processes was based on ordinary, Monod-type differential equations. The model parameters were estimated using experimental results obtained from three H-type MFCs operated at open or closed circuits and fed with glucose or ethanol. The experimental results demonstrate that similar fermentation processes were carried out under open and closed circuit operation, with the most important fermentation products being ethanol (with a yield of 1.81molmol(-1) glucose) and lactic acid (with a yield of 1.36molmol(-1) glucose). A peak in the electricity generation was obtained when glucose and fermentation products coexisted in the liquid bulk. However, almost 90% of the electricity produced came from the oxidation of ethanol. Copyright © 2015 Elsevier Ltd. All rights reserved.

  19. Metal/silicon Interfaces and Their Oxidation Behavior - Photoemission Spectroscopy Analysis.

    Science.gov (United States)

    Yeh, Jyh-Jye

    Synchrotron radiation photoemission spectroscopy was used to study Ni/Si and Au/Si interface properties on the atomic scale at room temperature, after high temperature annealing and after oxygen exposures. Room temperature studies of metal/Si interfaces provide background for an understanding of the interface structure after elevated temperature annealing. Oxidation studies of Si surfaces covered with metal overlayers yield insight about the effect of metal atoms in the Si oxidation mechanisms and are useful in the identification of subtle differences in bonding relations between atoms at the metal/Si interfaces. Core level and valence band spectra with variable surface sensitivities were used to study the interactions between metal, Si, and oxygen for metal coverages and oxide thickness in the monolayer region. Interface morphology at the initial stage of metal/Si interface formation and after oxidation was modeled on the basis of the evolutions of metal and Si signals at different probing depths in the photoemission experiment. Both Ni/Si and Au/Si interfaces formed at room temperature have a diffusive region at the interface. This is composed of a layer of metal-Si alloy, formed by Si outdiffusion into the metal overlayer, above a layer of interstitial metal atoms in the Si substrate. Different atomic structures of these two regions at Ni/Si interface can account for the two different growth orientations of epitaxial Ni disilicides on the Si(111) surface after thermal annealing. Annealing the Au/Si interface at high temperature depletes all the Au atoms except for one monolayer of Au on the Si(111) surface. These phenomena are attributed to differences in the metal-Si chemical bonding relations associated with specific atomic structures. After oxygen exposures, both the Ni disilicide surface and Au covered Si surfaces (with different coverages and surface orderings) show silicon in higher oxidation states, in comparison to oxidized silicon on a clean surface

  20. Interface strength and degradation of adhesively bonded porous aluminum oxides

    DEFF Research Database (Denmark)

    T. Abrahami, Shoshan; M. M. de Kok, John; Gudla, Visweswara Chakravarthy

    2017-01-01

    For more than six decades, chromic acid anodizing has been the main step in the surface treatment of aluminum for adhesivelybonded aircraft structures. Soon this process, known for producing a readily adherent oxide with an excellent corrosion resistance,will be banned by strict international....... The relationship between the anodizing conditions insulfuric and mixtures of sulfuric and phosphoric acid electrolytes and the formation and durability of bonding under variousenvironmental conditions was investigated. Scanning electron microscopy was used to characterize the oxide features. Selectedspecimens were...... studied with transmission electron microscopy coupled with energy-dispersive X-ray spectroscopy to measureresin concentration within structurally different porous anodic oxide layers as a function of depth. Results show that there are twocritical morphological aspects for strong and durable bonding. First...

  1. Chemical reaction at ferromagnet/oxide interface and its influence on anomalous Hall effect

    International Nuclear Information System (INIS)

    Liu, Yi-Wei; Teng, Jiao; Zhang, Jing-Yan; Liu, Yang; Chen, Xi; Li, Xu-Jing; Feng, Chun; Wang, Hai-Cheng; Li, Ming-Hua; Yu, Guang-Hua; Wu, Zheng-Long

    2014-01-01

    Chemical reactions at the ferromagnet/oxide interface in [Pt/Fe] 3 /MgO and [Pt/Fe] 3 /SiO 2 multilayers before and after annealing were investigated by X-ray photoelectron spectroscopy. The results show that Fe atoms at the Fe/MgO interface were completely oxidized in the as-grown state and significantly deoxidized after vacuum annealing. However, only some of the Fe atoms at the Fe/SiO 2 interface were oxidized and rarely deoxidized after annealing. The anomalous Hall effect was modified by this interfacial chemical reaction. The saturation anomalous Hall resistance (R xy ) was greatly increased in the [Pt/Fe] 3 /MgO multilayers after annealing and was 350% higher than that in the as-deposited film, while R xy of the [Pt/Fe] 3 /SiO 2 multilayer only increased 10% after annealing.

  2. Effect of hydrogen on the integrity of aluminium–oxide interface at elevated temperatures

    KAUST Repository

    Li, Meng; Xie, De-Gang; Ma, Evan; Li, Ju; Zhang, Xixiang; Shan, Zhi-Wei

    2017-01-01

    Hydrogen can facilitate the detachment of protective oxide layer off metals and alloys. The degradation is usually exacerbated at elevated temperatures in many industrial applications; however, its origin remains poorly understood. Here by heating hydrogenated aluminium inside an environmental transmission electron microscope, we show that hydrogen exposure of just a few minutes can greatly degrade the high temperature integrity of metal–oxide interface. Moreover, there exists a critical temperature of ∼150 °C, above which the growth of cavities at the metal–oxide interface reverses to shrinkage, followed by the formation of a few giant cavities. Vacancy supersaturation, activation of a long-range diffusion pathway along the detached interface and the dissociation of hydrogen-vacancy complexes are critical factors affecting this behaviour. These results enrich the understanding of hydrogen-induced interfacial failure at elevated temperatures.

  3. Effect of hydrogen on the integrity of aluminium–oxide interface at elevated temperatures

    KAUST Repository

    Li, Meng

    2017-02-20

    Hydrogen can facilitate the detachment of protective oxide layer off metals and alloys. The degradation is usually exacerbated at elevated temperatures in many industrial applications; however, its origin remains poorly understood. Here by heating hydrogenated aluminium inside an environmental transmission electron microscope, we show that hydrogen exposure of just a few minutes can greatly degrade the high temperature integrity of metal–oxide interface. Moreover, there exists a critical temperature of ∼150 °C, above which the growth of cavities at the metal–oxide interface reverses to shrinkage, followed by the formation of a few giant cavities. Vacancy supersaturation, activation of a long-range diffusion pathway along the detached interface and the dissociation of hydrogen-vacancy complexes are critical factors affecting this behaviour. These results enrich the understanding of hydrogen-induced interfacial failure at elevated temperatures.

  4. Ab Initio Thermodynamic Modeling of Electrified Metal-Oxide Interfaces

    DEFF Research Database (Denmark)

    Zeng, Zhenhua; Hansen, Martin Hangaard; Greeley, Jeff

    2015-01-01

    Solid oxide fuel cells are attractive devices in a sustainable energy context because of their fuel flexibility and potentially highly efficient conversion of chemical to electrical energy. The performance of the device is to a large extent determined by the atomic structure of the electrode-elec...

  5. Interface strength and degradation of adhesively bonded porous aluminum oxides

    NARCIS (Netherlands)

    Abrahami, S.T.; de Kok, John M.M.; Gudla, Visweswara C.; Ambat, Rajan; Terryn, H.A.; Mol, J.M.C.

    2017-01-01

    For more than six decades, chromic acid anodizing has been the main step in the surface treatment of aluminum for adhesively bonded aircraft structures. Soon this process, known for producing a readily adherent oxide with an excellent corrosion resistance, will be banned by strict international

  6. Novel graphene-oxide-coated SPR interfaces for biosensing applications

    DEFF Research Database (Denmark)

    Volkov, V. S.; Stebunov, Yu V.; Yakubovsky, D. I.

    2017-01-01

    Carbon allotropes-based nanomaterials possess unique physical and chemical properties including high surface area, the possibility of pi-stacking interaction with a wide range of biological objects, rich availability of oxygen-containing functional groups in graphene-oxide (GO), and excellent...

  7. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    Science.gov (United States)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  8. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

    Directory of Open Access Journals (Sweden)

    Valeri V. Afanas'ev

    2014-01-01

    Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

  9. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Angermann, Heike, E-mail: angermann@helmholtz-berlin.de

    2014-09-01

    Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D{sub it}(E), and density D{sub it,min} of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly

  10. Microstructure and mechanical properties of metal/oxide and metal/silicide interfaces

    International Nuclear Information System (INIS)

    Shaw, L.; Miracle, D.; Abbaschian, R.

    1995-01-01

    Fracture energies of Al 2 O 3 /Nb interfaces and MoSi 2 /Nb interfaces with and without Al 2 O 3 coating were measured using sandwich-type chevron-notched specimens. The relations between the mechanical properties, microstructures, types of bonds at the interface and processing routes were explored. The fracture energy of the Al 2 O 3 /Nb interface was determined to be 9 J/m 2 and changed to 16 J/m 2 when Nb was pre-oxidized before the formation of the Al 2 O 3 /Nb interface. The fracture energy of the MoSi 2 /Nb interface could not be determined directly because of the formation of the interfacial compounds. However, the fracture energy at the MoSi 2 /Nb interfacial region was found to depend on the interfacial bond strength, roughness of interfaces and microstructure of interfacial compounds. The interfacial fracture energies of Al 2 O 3 with silicides, MoSi 2 , Nb 5 Si 3 , or (Nb, Mo)Si 2 were estimated to be about 16 J/m 2 , while the interfacial fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m 2 . The measured fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m 2 . The measured fracture energies of the various interfaces are discussed in terms of the interfacial microstructures and types of bonds at the interfaces

  11. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    International Nuclear Information System (INIS)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ interface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°

  12. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Ngah Demon, Siti Zulaikha [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Department of Physics, Centre of Defence Foundation Studies, National Defence University of Malaysia, 53 000 Kuala Lumpur (Malaysia); Miyauchi, Yoshihiro [Department of Applied Physics, School of Applied Sciences, National Defense Academy of Japan, 239-8686 Kanagawa (Japan); Mizutani, Goro, E-mail: mizutani@jaist.ac.jp [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Matsushima, Toshinori; Murata, Hideyuki [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan)

    2014-08-30

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ{sub interface} with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  13. Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Lamagna, Luca; Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy); Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Milano (Italy); Brammertz, Guy; Meuris, Marc [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium)

    2010-01-01

    Capping III-V compound surfaces with Ge ultra-thin layer might be a viable pathway to passivate the electrically active interface traps which usually jeopardize the integration of III-V materials in metal-oxide-semiconductor devices. As the physical nature of such traps is intrinsically related to the chemical details of the interface composition, the structural and compositional features of the Ge/GaAs interface were thoroughly investigated in two different configurations, the atomic layer deposition of La-doped ZrO{sub 2} films on Ge-capped GaAs and the ultra-high vacuum based molecular beam deposition of GeO{sub 2}/Ge double stack on in situ prepared GaAs. In the former case, the intercalation of a Ge interface layer is shown to suppress the concentration of interface Ga-O, As-O and elemental As bonding which were significantly detected in case of the direct oxide deposition on GaAs. In the latter case, the incidence of two different in situ surface preparations, the Ar sputtering and the atomic H cleaning, on the interface composition is elucidated and the beneficial role played by the atomic H exposure in reducing the semiconductor-oxygen bonds at the interface level is demonstrated.

  14. Physical chemistry of the interface between oxide and aqueous solution

    International Nuclear Information System (INIS)

    Jolivet, J.P.

    1997-01-01

    The behavior and properties of small oxide particles in aqueous suspension are dominated by the physico-chemistry of their surface. It is electrostatically charged and strongly solvated. The origin of the surface charge is discussed through the MUSIC model [Hiemstra 1996], allowing to estimate the acid-base behavior of surface oxygen atoms. The stability of aqueous dispersions of particles is analysed following the DLVO model, with a special attention on the hydration layers allowing the peptization of flocs. Different adsorption mechanisms of metal cations are presented in terms of coordination chemistry (outer- and inner-sphere complexes) emphasizing the coordinating ability of the surface towards metal complexes in solution. The anion adsorption is also studied in relation with some interesting consequences on spinel iron oxide nano-particles. (author)

  15. Investigations of the electronic, magnetic and crystalline structure of perovskite oxides and an oxide-oxide interface

    International Nuclear Information System (INIS)

    Raisch, Christoph Werner

    2013-01-01

    Strontium doped LSMO, Calcium doped LCMO and undoped LMO are discussed in chapter 7. The focus lies on a multi-technique approach to correlate changes of one parameter to its effects on others. The characterization of a YBCO / LCMO heterostructure on STO concludes this work (chapter 8). Again it is the electronic, magnetic and crystalline structure at the interface that proves crucial for the properties of this unusual system which artificially combines a superconductor (SC) and a ferromagnet (FM). This structure makes two antagonistic effects meet, the tendency of a superconductor to pair two electrons with different spin into Cooper pairs and the tendency of a ferromagnet to align all spin moments. This fascinating competition shows the wide range of properties that the perovskite oxides offer when they are used accordingly and combined usefully. The above mentioned polar discontinuity at the interface between a manganite and a cuprate is examined. The thesis is completed by a summary and an outlook.

  16. Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Saks, N.S.

    1996-01-01

    We have combined thermally stimulated-current (TSC) and capacitance endash voltage (C endash V) measurements to estimate oxide, interface, and effective border trap densities in 6 endash 23 nm thermal, N 2 O, and N 2 O-nitrided oxides exposed to ionizing radiation or high-field electron injection. Defect densities depend strongly on oxide processing, but radiation exposure and moderate high-field stress lead to similar trapped hole peak thermal energy distributions (between ∼1.7 and ∼2.0 eV) for all processes. This suggests that similar defects dominate the oxide charge trapping properties in these devices. Radiation-induced hole and interface trap generation efficiencies (0.1%endash 1%) in the best N 2 O and N 2 O-nitrided oxides are comparable to the best radiation hardened oxides in the literature. After ∼10 Mrad(SiO 2 ) x-ray irradiation or ∼10 mC/cm 2 constant current Fowler endash Nordheim injection, effective border trap densities as high as ∼5x10 11 cm -2 are inferred from C endash V hysteresis. These measurements suggest irradiation and high-field stress cause similar border trap energy distributions. In each case, even higher densities of compensating trapped electrons in the oxides (up to 2x10 12 cm -2 ) are inferred from combined TSC and C endash V measurements. These trapped electrons prevent conventional C endash V methods from providing accurate estimates of the total oxide trap charge density in many irradiation or high-field stress studies. Fewer compensating electrons per trapped hole (∼26%±5%) are found for irradiation of N 2 O and N 2 O-nitrided oxides than for thermal oxides (∼46%±7%). (Abstract Truncated)

  17. Hotspots of anaerobic ammonia oxidation in land - freshwater interfaces

    DEFF Research Database (Denmark)

    Zhu, Guibing; Wang, Shanyun; Wang, Weidong

    2013-01-01

    sampled fromlake riparian zones in North China. Laboratory incubations in the presence of ammonium or nitrate—at concentrations equivalent to no more than 10% of those detected in situ—yielded some of the highest potential anammox activities reported for natural environments to date. Potential rates......For decades, the conversion of organic nitrogen to dinitrogen gas by heterotrophic bacteria, termed heterotrophic denitrification, was assumed to be the main pathway of nitrogen loss in natural ecosystems. Recently, however, autotrophic bacteria have been shown to oxidize ammonium in the absence...

  18. Photoelectrolysis at the oxide-electrolyte interface as interpreted through the 'transition' layer model

    Science.gov (United States)

    Kalia, R. K.; Weber, Michael F.; Schumacher, L.; Dignam, M. J.

    1980-12-01

    A transition layer model of the oxide-electrolyte interface, proposed earlier by one of us, is outlined and then examined in the light of experimental data relating primarily to photoelectrolysis of water at semiconducting oxide electrodes. The model provides useful insight into the behaviour of the system and allows a calculation of thc minimum bias potential needed for photoelectrolysis, thus illuminating the origin of the requirement for such an external bias. In order to electrolyse water without a bias, the model requires an n-type oxide to be sufficiently reduced so that it is thermodynamically capable of chemically reducing water to produce hydrogen at 1 atm pressure. Similarly, for bias-free operation, a p-type metal oxide must be thermodynamically unstable with respect to the release of oxygen at 1 atm pressure. In the face of these requirements it is apparent that oxide stability is bound to be in general a serious problem for nonstoichiometric single metal oxides.

  19. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  20. Virtual Box

    DEFF Research Database (Denmark)

    Davis, Hilary; Skov, Mikael B.; Stougaard, Malthe

    2007-01-01

    . This paper reports on the design, implementation and initial evaluation of Virtual Box. Virtual Box attempts to create a physical and engaging context in order to support reciprocal interactions with expressive content. An implemented version of Virtual Box is evaluated in a location-aware environment...

  1. Determination of the bonding strength in solid oxide fuel cells' interfaces by Schwickerath crack initiation test

    DEFF Research Database (Denmark)

    Boccaccini, D. N.; Sevecek, O.; Frandsen, Henrik Lund

    2017-01-01

    An adaptation of the Schwickerath crack initiation test (ISO 9693) was used to determine the bonding strength between an anode support and three different cathodes with a solid oxide fuel cell interconnect. Interfacial elemental characterization of the interfaces was carried out by SEM/EDS analys...

  2. Interface engineering for oxide electronics: tuning electronic properties by atomically controlled growth

    NARCIS (Netherlands)

    Huijben, Mark

    2006-01-01

    The main aim of this thesis is to develop a controlled growth with atomic precision for the realization of artificial perovskite structures, to exploit the exceptional physical properties of complex oxide materials such as high-temperature superconductors and conducting interfaces between band

  3. The electrochemical transfer reactions and the structure of the iron|oxide layer|electrolyte interface

    International Nuclear Information System (INIS)

    Petrović, Željka; Metikoš-Huković, Mirjana; Babić, Ranko

    2012-01-01

    The thickness, barrier (protecting) and semiconducting properties of the potentiostatically formed oxide films on the pure iron electrode in an aqueous borate buffer solution were investigated by electrochemical quartz crystal nanobalance (EQCN), electrochemical impedance spectroscopy (EIS), and Mott–Schottky (MS) analysis. The thicknesses of the prepassive Fe(II)hydroxide layer (up to monolayer) nucleated on the bare iron surface and the passive Fe(II)/Fe(III) layer (up to 2 nm), deposited on the top of the first one, were determined using in situ gravimetry. Electronic properties of iron prepassive and passive films as well as ionic and electronic transfer reactions at the film|solution interface were discussed on the basis of a band structure model of the surface oxide film and the potential distribution at the interface. The anodic oxide film formation and cathodic decomposition are coupled processes and their reversible inter-conversion is mediated by the availability of free charge carriers on the electrode|solution interface. The structure of the reversible double layer at the iron oxide|solution interface was discussed based on the concept of the specific adsorption of the imidazolium cation on the negatively charged electrode surface at pH > pH pzc .

  4. Metal/metal-oxide interfaces: A surface science approach to the study of adhesion

    Energy Technology Data Exchange (ETDEWEB)

    Peden, C.H.F.; Kidd, K.B.; Shinn, N.D. (Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (USA))

    1991-05-01

    Metal-oxide/metal interfaces play an important role, for example, in the joining of an oxide ceramic to a metal for sealing applications. In order to probe the chemical and physical properties of such an interface, we have performed Auger electron spectroscopic (AES) and temperature programed desorption (TPD) experiments on a model system composed of very thin films of Cr, Fe, Ni, or Cu evaporated onto a very thin thermally grown oxide on a W single crystal. Monolayer films of Fe and Cr were found (by AES) to completely wet the oxide surface upon deposition, and were stable up to temperatures at which the films desorbed ({approx}1300 K). In contrast, monolayer Ni and Cu films formed three-dimensional islands exposing the oxidized W surface either upon annealing (Ni) or even upon room-temperature deposition (Cu). The relative interfacial interaction between the overlayer metal and the oxide, as assessed by TPD, increases in the series Cu{lt}Ni{lt}Fe{lt}Cr. This trend follows the heats of formation of the various oxides of these metals.

  5. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Gang [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Xu, Can; Feldman, Leonard C. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States); Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States); Bloch, Joseph [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); NRCN, Beer-Sheva 84190 (Israel); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-11-10

    We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D{sub 2}O) on the n-type 4H-SiC carbon face (0001{sup ¯}) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D{sub 2}O exposure is proportional to the total D amount at the interface.

  6. Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

    International Nuclear Information System (INIS)

    Zupac, D.; Galloway, K.F.; Khosropour, P.; Anderson, S.R.; Schrimpf, R.D.

    1993-01-01

    An effective approach to separating the effects of oxide-trapped charge and interface-trapped charge on mobility degradation in irradiated MOSFETs is demonstrated. It is based on analyzing mobility data sets which have different functional relationships between the radiation-induced-oxide-trapped charge and interface-trapped charge. Separation of effects of oxide-trapped charge and interface-trapped charge is possible only if these two trapped charge components are not linearly dependent. A significant contribution of oxide-trapped charge to mobility degradation is demonstrated and quantified

  7. The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

    Directory of Open Access Journals (Sweden)

    Đorić-Veljković Snežana M.

    2013-01-01

    Full Text Available The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface. [Projekat Ministarstva nauke Republike Srbije, br. OI171026

  8. Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

    OpenAIRE

    Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

    2016-01-01

    Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

  9. Crystalline oxides on semiconductors: A structural transition of the interface phase

    Science.gov (United States)

    Walker, F. J.; Buongiorno-Nardelli, Marco; Billman, C. A.; McKee, R. A.

    2004-03-01

    The growth of crystalline oxides on silicon is facilitated by the preparation of a surface phase of alkaline earth silicide. We describe how the surface phase serves as a precursor of the final interface phase using reflection high energy electron diffraction (RHEED) and density functional theory (DFT). RHEED intensity oscillations of the growth of BaSrO show layer-by-layer build up of the oxide on the interface. The 2x1 symmetry of the surface precursor persists up to 3 ML BaSrO coverage at which point a 1x1 pattern characteristic of the rock-salt structure of BaSrO is observed. Prior to 3 ML growth of alkaline earth oxide, DFT calculations and RHEED show that the surface precursor persists as the interface phase and induces large displacements in the growing oxide layer away from the rock-salt structure and having a 2x1 symmetry. These distortions of the rock-salt structure are energetically unfavorable and become more unfavorable as the oxide thickness increases. At 3 ML, the stability of the rock-salt structure drives a structural transformation of the film and the interface phase to a structure that is distinct from the surface precursor. Research sponsored jointly by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy at Oak Ridge National Laboratory under contract DE-AC05-00OR22725 with UT-Battelle, LLC and at the University of Tennessee under contract DE-FG02-01ER45937. Calculations have been performed on CCS supercomputers at Oak Ridge National Laboratory.

  10. A polarity-induced defect mechanism for conductivity and magnetism at polar-nonpolar oxide interfaces.

    Science.gov (United States)

    Yu, Liping; Zunger, Alex

    2014-10-13

    The discovery of conductivity and magnetism at the polar-nonpolar interfaces of insulating nonmagnetic oxides such as LaAlO3 and SrTiO3 has raised prospects for attaining interfacial functionalities absent in the component materials. Yet, the microscopic origin of such emergent phenomena remains unclear, posing obstacles to design of improved functionalities. Here we present first principles calculations of electronic and defect properties of LaAlO3/SrTiO3 interfaces and reveal a unifying mechanism for the origins of both conductivity and magnetism. We demonstrate that the polar discontinuity across the interface triggers thermodynamically the spontaneous formation of certain defects that in turn cancel the polar field induced by the polar discontinuity. The ionization of the spontaneously formed surface oxygen vacancy defects leads to interface conductivity, whereas the unionized Ti-on-Al antisite defects lead to interface magnetism. The proposed mechanism suggests practical design principles for inducing and controlling both conductivity and magnetism at general polar-nonpolar interfaces.

  11. Finite element modelling of the oxidation kinetics of Zircaloy-4 with a controlled metal-oxide interface and the influence of growth stress

    International Nuclear Information System (INIS)

    Zumpicchiat, Guillaume; Pascal, Serge; Tupin, Marc; Berdin-Méric, Clotilde

    2015-01-01

    Highlights: We developed two finite element models of zirconium-based alloy oxidation using the CEA Cast3M code to simulate the oxidation kinetics of Zircaloy-4: the diffuse interface model and the sharp interface model. We also studied the effect of stresses on the oxidation kinetics. The main results are: • Both models lead to parabolic oxidation kinetics in agreement with the Wagner’s theory. • The modellings enable to calculate the stress distribution in the oxide as well as in the metal. • A strong effect of the hydrostatic stress on the oxidation kinetics has been evidenced. • The stress gradient effect changes the parabolic kinetics into a sub-parabolic law closer to the experimental kinetics because of the stress gradient itself, but also because of the growth stress increase with the oxide thickness. - Abstract: Experimentally, zirconium-based alloys oxidation kinetics is sub-parabolic, by contrast with the Wagner theory which predicts a parabolic kinetics. Two finite element models have been developed to simulate this phenomenon: the diffuse interface model and the sharp interface model. Both simulate parabolic oxidation kinetics. The growth stress effects on oxygen diffusion are studied to try to explain the gap between theory and experience. Taking into account the influence of the hydrostatic stress and its gradient into the oxygen flux expression, sub-parabolic oxidation kinetics have been simulated. The sub-parabolic behaviour of the oxidation kinetics can be explained by a non-uniform compressive stress level into the oxide layer.

  12. Interface Controlled Oxidation States in Layered Cobalt Oxide Nanoislands on Gold

    DEFF Research Database (Denmark)

    Walton, Alexander; Fester, Jakob; Bajdich, Michal

    2015-01-01

    Layered cobalt oxides have been shown to be highly active catalysts for the oxygen evolution reaction (OER; half of the catalytic “water splitting” reaction), particularly when promoted with gold. However, the surface chemistry of cobalt oxides and in particular the nature of the synergistic effect...

  13. Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

    Science.gov (United States)

    Choi, Woong; Lee, Jung-Kun; Findikoglu, Alp T.

    2006-12-01

    The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on ⟨001⟩-oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2×1012to1×1011cm-2eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (⩽1μm ) polycrystalline Si MOS-type devices.

  14. In situ observation of Ag-Cu-Ti liquid alloy/solid oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Durov, O.V. [Frantsevich Institute for Problems of Materials Science of NASU, 3 Krzhyzhanovsky Street, Kiev 142, 03680 (Ukraine)], E-mail: avdu@ukr.net; Krasovskyy, V.P. [Frantsevich Institute for Problems of Materials Science of NASU, 3 Krzhyzhanovsky Street, Kiev 142, 03680 (Ukraine)

    2008-11-15

    In situ investigation methods are a very interesting means for understanding high-temperature interface processes. A method of direct observation of the interactions between transparent materials (Al{sub 2}O{sub 3}, SiO{sub 2}, CaF{sub 2}) and metal melts was elaborated. For the Ag-36.65 at.%Cu-8.15 at.%Ti/sapphire system, the formation of a dark compound at the interface was observed to occur at high temperature. This result does not confirm the conclusion of a neutron spectroscopy study which indicated that titanium oxides form at the interface only during solidification of the alloy. Interactions of the same alloy with SiO{sub 2} and CaF{sub 2} were also considered.

  15. Effects of the Molybdenum Oxide/Metal Anode Interfaces on Inverted Polymer Solar Cells

    International Nuclear Information System (INIS)

    Wu Jiang; Guo Xiao-Yang; Xie Zhi-Yuan

    2012-01-01

    Inverted polymer solar cells with molybdenum oxide (MoO 3 ) as an anode buffer layer and different metals (Al or Ag) as anodes are studied. It is found that the inverted cell with a top Ag anode demonstrates enhanced charge collection and higher power conversion efficiency (PCE) compared to the cell with a top Al anode. An 18% increment of PCE is obtained by replacing Al with Ag as the top anode. Further studies show that an interfacial dipole pointing from MoO 3 to Al is formed at MoO 3 /Al interfaces due to electron transfer from Al to MoO 3 while this phenomenon cannot be observed at MoO 3 /Ag interfaces. It is speculated that the electric field at the MoO 3 /Al interface would hinder hole extraction, and hence reduce the short-circuit current

  16. Bento Boxes

    Science.gov (United States)

    Hasio, Cindy

    2010-01-01

    Bento boxes are common objects in Japanese culture, designed to hold enough lunch for one person. They have individual compartments and sometimes multiple tiers for rice, vegetables, and other side dishes. They are made of materials ranging from wood, cloth, aluminum, or plastic. In general, the greater the number of foods, the better the box is…

  17. Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

    OpenAIRE

    Ivan Litzov; Christoph J. Brabec

    2013-01-01

    Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work fun...

  18. Laser assisted green synthesis of free standing reduced graphene oxides at the water–air interface

    International Nuclear Information System (INIS)

    Compagnini, G; Russo, P; Tomarchio, F; Puglisi, O; D’Urso, L; Scalese, S

    2012-01-01

    A single step, scalable and green strategy has been developed to obtain reduced graphene oxide layers in water dispersion through nanosecond laser pulse irradiation of carbon targets. The layers spontaneously migrate at the water–air interface, forming sheets of several tens of micrometers and show intense ultraviolet photoluminescence. This unique condition offers an intriguing environment where opposing dielectric media meet and can be used in all those processes where molecular interactions such as hydrogen bonding and electrostatic interactions are greatly enhanced. (paper)

  19. Promotion of Water-mediated Carbon Removal by Nanostructured Barium Oxide/nickel Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    L Yang; Y Choi; W Qin; H Chen; K Blinn; M Liu; P Liu; J Bai; T Tyson; M Liu

    2011-12-31

    The existing Ni-yttria-stabilized zirconia anodes in solid oxide fuel cells (SOFCs) perform poorly in carbon-containing fuels because of coking and deactivation at desired operating temperatures. Here we report a new anode with nanostructured barium oxide/nickel (BaO/Ni) interfaces for low-cost SOFCs, demonstrating high power density and stability in C{sub 3}H{sub 8}, CO and gasified carbon fuels at 750 C. Synchrotron-based X-ray analyses and microscopy reveal that nanosized BaO islands grow on the Ni surface, creating numerous nanostructured BaO/Ni interfaces that readily adsorb water and facilitate water-mediated carbon removal reactions. Density functional theory calculations predict that the dissociated OH from H2O on BaO reacts with C on Ni near the BaO/Ni interface to produce CO and H species, which are then electrochemically oxidized at the triple-phase boundaries of the anode. This anode offers potential for ushering in a new generation of SOFCs for efficient, low-emission conversion of readily available fuels to electricity.

  20. Iron oxidation kinetics and phosphorus immobilization at the groundwater-surface water interface

    Science.gov (United States)

    van der Grift, Bas; Rozemeijer, Joachim; Griffioen, Jasper; van der Velde, Ype

    2014-05-01

    Eutrophication of freshwater environments following diffuse nutrient loads is a widely recognized water quality problem in catchments. Fluxes of non-point P sources to surface waters originate from surface runoff and flow from soil water and groundwater into surface water. The availability of P in surface waters is controlled strongly by biogeochemical nutrient cycling processes at the soil-water interface. The mechanisms and rates of the iron oxidation process with associated binding of phosphate during exfiltration of anaerobic Fe(II) bearing groundwater are among the key unknowns in P retention processes in surface waters in delta areas where the shallow groundwater is typically pH-neutral to slightly acid, anoxic, iron-rich. We developed an experimental field set-up to study the dynamics in Fe(II) oxidation and mechanisms of P immobilization at the groundwater-surface water interface in an agricultural experimental catchment of a small lowland river. We physically separated tube drain effluent from groundwater discharge before it entered a ditch in an agricultural field. The exfiltrating groundwater was captured in in-stream reservoirs constructed in the ditch. Through continuous discharge measurements and weekly water quality sampling of groundwater, tube drain water, exfiltrated groundwater, and ditch water, we quantified Fe(II) oxidation kinetics and P immobilization processes across the seasons. This study showed that seasonal changes in climatic conditions affect the Fe(II) oxidation process. In winter time the dissolved iron concentrations in the in-stream reservoirs reached the levels of the anaerobic groundwater. In summer time, the dissolved iron concentrations of the water in the reservoirs are low, indicating that dissolved Fe(II) is completely oxidized prior to inflow into the reservoirs. Higher discharges, lower temperatures and lower pH of the exfiltrated groundwater in winter compared to summer shifts the location of the redox transition zone

  1. Synthesis and morphology of hydroxyapatite/polyethylene oxide nanocomposites with block copolymer compatibilized interfaces

    Science.gov (United States)

    Lee, Ji Hoon; Shofner, Meisha

    2012-02-01

    In order to exploit the promise of polymer nanocomposites, special consideration should be given to component interfaces during synthesis and processing. Previous results from this group have shown that nanoparticles clustered into larger structures consistent with their native shape when the polymer matrix crystallinity was high. Therefore in this research, the nanoparticles are disguised from a highly-crystalline polymer matrix by cloaking them with a matrix-compatible block copolymer. Specifically, spherical and needle-shaped hydroxyapatite nanoparticles were synthesized using a block copolymer templating method. The block copolymer used, polyethylene oxide-b-polymethacrylic acid, remained on the nanoparticle surface following synthesis with the polyethylene oxide block exposed. These nanoparticles were subsequently added to a polyethylene oxide matrix using solution processing. Characterization of the nanocomposites indicated that the copolymer coating prevented the nanoparticles from assembling into ordered clusters and that the matrix crystallinity was decreased at a nanoparticle spacing of approximately 100 nm.

  2. Raman spectroscopy of sputtered metal-graphene and metal-oxide-graphene interfaces

    Science.gov (United States)

    Chen, Ching-Tzu; Gajek, Marcin; Freitag, Marcus; Kuroda, Marcelo; Perebeinos, Vasili; Raoux, Simone

    2012-02-01

    In this talk, we report our recent development in sputtering deposition of magnetic and non-magnetic metal and metal-oxide thin films on graphene for applications in spintronics and nanoeleoctronics. TEM and SEM images demonstrate homogeneous coverage, uniform thickness, and good crystallinity of the sputtered films. Raman spectroscopy shows that the structure of the underlying graphene is well preserved, and the spectral weight of the defect D mode is comparable to that of the e-beam evaporated samples. Most significantly, we report the first observation of graphene-enhanced surface excitations of crystalline materials. Specifically, we discover two pronounced dispersive Raman modes at the interface of graphene and the nickel-oxide and cobalt-oxide films which we attribute to the strong light absorption and high-order resonant scattering process in the graphene layer. We will present the frequency-dependent, polarization-dependent Raman data of these two modes and discuss their microscopic origin.

  3. GLASS BOX

    National Research Council Canada - National Science Library

    Curtis, Laura

    2008-01-01

    The goals of this effort were to develop Glass Box capabilities to allow for the capturing of analyst activities and the associated data resources, track and log the results of automated processing...

  4. Preliminary results on the chemical characterisation of the cathode nickel--emissive layer interface in oxide cathodes

    International Nuclear Information System (INIS)

    Jenkins, S.N.; Barber, D.K.; Whiting, M.J.; Baker, M.A.

    2003-01-01

    In cathode ray tube (CRT) thermionic oxide cathodes, the nickel-oxide interface properties are key to understanding the mechanisms of operation. At the elevated operational temperatures, free barium is formed at the interface by the reaction of reducing activators, from the nickel alloy, with barium oxide. The free barium diffuses to the outer surface of the oxide providing a low work function electron-emitting surface. However, during cathode life an interface layer grows between the nickel alloy and oxide, comprised of reaction products. The interfacial layer sets limits on the cathode performance and useful operational lifetime by inhibiting the barium reducing reaction. This paper discusses sample preparation procedures for exposure of the interface and the use of several surface and bulk analytical techniques to study interface layer formation. SEM, AES and SIMS data are presented, which provide preliminary insight into the mechanisms operating during the cathode's lifetime. There is evidence that the activator elements in the nickel alloy base, Al and Mg, are able to diffuse to the surface of the oxide during activation and ageing and that these elements are enriched at the interface after accelerated life

  5. Atomic Scale Structure-Chemistry Relationships at Oxide Catalyst Surfaces and Interfaces

    Science.gov (United States)

    McBriarty, Martin E.

    Oxide catalysts are integral to chemical production, fuel refining, and the removal of environmental pollutants. However, the atomic-scale phenomena which lead to the useful reactive properties of catalyst materials are not sufficiently understood. In this work, the tools of surface and interface science and electronic structure theory are applied to investigate the structure and chemical properties of catalytically active particles and ultrathin films supported on oxide single crystals. These studies focus on structure-property relationships in vanadium oxide, tungsten oxide, and mixed V-W oxides on the surfaces of alpha-Al2O3 and alpha-Fe2O 3 (0001)-oriented single crystal substrates, two materials with nearly identical crystal structures but drastically different chemical properties. In situ synchrotron X-ray standing wave (XSW) measurements are sensitive to changes in the atomic-scale geometry of single crystal model catalyst surfaces through chemical reaction cycles, while X-ray photoelectron spectroscopy (XPS) reveals corresponding chemical changes. Experimental results agree with theoretical calculations of surface structures, allowing for detailed electronic structure investigations and predictions of surface chemical phenomena. The surface configurations and oxidation states of V and W are found to depend on the coverage of each, and reversible structural shifts accompany chemical state changes through reduction-oxidation cycles. Substrate-dependent effects suggest how the choice of oxide support material may affect catalytic behavior. Additionally, the structure and chemistry of W deposited on alpha-Fe 2O3 nanopowders is studied using X-ray absorption fine structure (XAFS) measurements in an attempt to bridge single crystal surface studies with real catalysts. These investigations of catalytically active material surfaces can inform the rational design of new catalysts for more efficient and sustainable chemistry.

  6. Analysis of the stability of native oxide films at liquid lead/metal interfaces

    International Nuclear Information System (INIS)

    Lesueur, C.; Chatain, D.; Gas, P.; Bergman, C.; Baque, F.

    2002-01-01

    The interface between liquid lead and different metallic solids (pure metals: Al, Fe and Ni, and T91 steel) was investigated below 400 deg C under ultrahigh vacuum (UHV) by wetting experiments. The aim was to check the physical stability of native oxide films grown at the surface of the substrates, along a contact with liquid lead. Two types of metallic substrates were used: i) conventional bulk polycrystals, and ii) nanocrystalline films obtained by e-beam evaporation under UHV. The actual contact between liquid lead and the solid substrates was achieved by preparing lead drops in-situ. Wetting experiments were performed using sessile drop and/or liquid bridge methods. Fresh solid surfaces and former liquid/solid interfaces can be explored by squeezing and stretching a liquid lead bridge formed between two parallel and horizontal substrates. It is shown that the contact with liquid lead produces the detachment of the native oxide films grown on the metallic solids. It is concluded that if oxide coatings are needed to protect a metallic solid from attack by liquid lead, they should be self-renewable. (authors)

  7. Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces.

    Science.gov (United States)

    Litzov, Ivan; Brabec, Christoph J

    2013-12-10

    Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n -type- and p -type-like MeO x interface materials consisting of binary compounds A x B y . Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed.

  8. Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ Solar Cells Using Different Metal Oxide Interfaces

    Directory of Open Access Journals (Sweden)

    Ivan Litzov

    2013-12-01

    Full Text Available Solution-processed inverted bulk heterojunction (BHJ solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL and as hole transport/extraction layers (HTL/HEL in inverted BHJ solar cells will be reviewed and discussed.

  9. Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

    Directory of Open Access Journals (Sweden)

    Fu-Chien Chiu

    2013-01-01

    Full Text Available The interfacial properties between silicon and hafnium oxide (HfO2 are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

  10. The effect of interfaces on solid-state reactions between oxides

    International Nuclear Information System (INIS)

    Johnson, M.T.; Carter, C.B.

    1998-01-01

    A thin-film geometry has been used to study fundamental solid-state reaction processes occurring at interfaces in two spinel-forming oxide systems. In the first system, NiO/Al 2 O 3 , epitactic NiO films were deposited on various orientations of single-crystal α-Al 2 O 3 . In this case, the reaction kinetics were studied and correlated with the interfacial structure (or substrate orientation). In the second, In 2 O 3 /MgO, solid-state reactions were studied under the influence of an electric field. The electric field provides a driving force for mass transport that affects both the reaction process and the morphological stability of an interface

  11. Growth of aluminum oxide on silicon carbide with an atomically sharp interface

    DEFF Research Database (Denmark)

    Silva, Ana Gomes; Pedersen, Kjeld; Li, Zheshen

    2017-01-01

    this system up to around 600 °C (all in ultrahigh vacuum). This converts all the SiO2 into a uniform layer of Al2O3 with an atomically sharp interface between the Al2O3 and the Si surface. In the present work, the same procedures are applied to form Al2O3 on a SiC film grown on top of Si (111). The results...... indicate that a similar process, resulting in a uniform layer of 1-2 nm of Al2O3 with an atomically sharp Al2O3/SiC interface, also works in this case.......The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal-oxide-semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation...

  12. Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

    Science.gov (United States)

    Litzov, Ivan; Brabec, Christoph J.

    2013-01-01

    Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed. PMID:28788423

  13. Nanoscale control of oxide interface conduction in graphene-complex-oxide heterostructures

    Science.gov (United States)

    Huang, Mengchen; Ryu, Sangwoo; Ghahari, Fereshte; Jnawali, Giriraj; Ravichandran, Jayakanth; Irvin, Patrick; Kim, Philip; Eom, Chang-Beom; Levy, Jeremy

    2014-03-01

    Graphene is a promising material for high-speed optoelectronic devices such as THz modulators and detectors. Recently, broadband THz emission and detection can be achieved with nanostructures at the LaAlO3/SrTiO3 interface [2]. We have mechanically exfoliated single layer and multilayer graphene on top of 3.4 unit cell LaAlO3/SrTiO3 and successfully sketched nanowires in the 2DEG underneath graphene using conductive AFM lithgraphy [3]. Raman and AFM investigations confirm that the graphene quality and surface morphology remain unaltered by the writing process. These first experimental demonstrations of integrating graphene and LaAlO3/SrTiO3 are promising for future DC-THz photonic applications. We gratefully acknowledge support for this work from ONR (N00014-13-1-0806), NSF(DMR-1124131, DMR-1104191), and AFOSR (FA9550-12-1-0342).

  14. Effective improvement of interface modified strontium titanate based solid oxide fuel cell anodes by infiltration with nano-sized palladium and gadolinium-doped cerium oxide

    DEFF Research Database (Denmark)

    Abdul Jabbar, Mohammed Hussain; Høgh, Jens Valdemar Thorvald; Zhang, Wei

    2013-01-01

    The development of low temperature solid oxide fuel cell (SOFC) anodes by infiltration of Pd/Gd-doped cerium oxide (CGO) electrocatalysts in Nb-doped SrTiO3 (STN) backbones has been investigated. Modification of the electrode/electrolyte interface by thin layer of spin-coated CGO (400-500 nm) con...

  15. Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

    NARCIS (Netherlands)

    Chen, Yunzhong; Trier, F.; Wijnands, Tom; Green, R.J.; Gauquelin, N.; Egoavil, R.; Christensen, D.V.; Koster, Gertjan; Huijben, Mark; Bovet, N.; Macke, S.; He, F.; Sutarto, R.; Andersen, N.H.; Sulpizio, J.A.; Honig, M.; Prawiroatmodjo, G.E.D.K.; Jespersen, T.S.; Linderoth, S.; Ilani, S.; Verbeeck, J.; van Tendeloo, G.; Rijnders, Augustinus J.H.M.; Sawatzky, G.A.; Pryds, N.

    2015-01-01

    Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable

  16. Interface bonding in silicon oxide nanocontacts: interaction potentials and force measurements

    Science.gov (United States)

    Wierez-Kien, M.; Craciun, A. D.; Pinon, A. V.; Le Roux, S.; Gallani, J. L.; Rastei, M. V.

    2018-04-01

    The interface bonding between two silicon-oxide nanoscale surfaces has been studied as a function of atomic nature and size of contacting asperities. The binding forces obtained using various interaction potentials are compared with experimental force curves measured in vacuum with an atomic force microscope. In the limit of small nanocontacts (typically contact area which is altered by stretching speeds. The mean unbinding force is found to decrease as the contact spends time in the attractive regime. This contact weakening is featured by a negative aging coefficient which broadens and shifts the thermal-induced force distribution at low stretching speeds.

  17. Injection of holes at indium tin oxide/dendrimer interface: An explanation with new theory of thermionic emission at metal/organic interfaces

    International Nuclear Information System (INIS)

    Peng Yingquan; Lu Feiping

    2006-01-01

    The traditional theory of thermionic emission at metal/inorganic crystalline semiconductor interfaces is no longer applicable for the interface between a metal and an organic semiconductor. Under the assumption of thermalization of hot carriers in the organic semiconductor near the interface, a theory for thermionic emission of charge carriers at metal/organic semiconductor interfaces is developed. This theory is used to explain the experimental result from Samuel group [J.P.J. Markham, D.W. Samuel, S.-C. Lo, P.L. Burn, M. Weiter, H. Baessler, J. Appl. Phys. 95 (2004) 438] for the injection of holes from indium tin oxide into the dendrimer based on fac-tris(2-phenylpyridyl) iridium(III)

  18. Channel box

    International Nuclear Information System (INIS)

    Tanabe, Akira.

    1993-01-01

    In a channel box of a BWR type reactor, protruding pads are disposed in axial position on the lateral side of a channel box opposing to a control rod and facing the outer side portion of the control rod in a reactor core loaded state. In the initial loading stage of fuel assemblies, channel fasteners and spacer pads are abutted against each other in the upper portion between the channel boxes sandwiching the control rod therebetween. Further, in the lower portion, a gap as a channel for the movement of the control rod is ensured by the support of fuel support metals. If the channel box is bent toward the control rod along with reactor operation, the pads are abutted against each other to always ensure the gap through which the control rod can move easily. Further, when the pads are brought into contact with each other, the bending deformation of the channel box is corrected by urging to each other. Thus, the control rod can always be moved smoothly to attain reactor safety operation. (N.H.)

  19. X-ray studies of interface Fe-oxide in annealed MgO based magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    Telesca, D., E-mail: donaldtelesca@gmail.com [Department of Physics, University of Connecticut, 2152 Hillside Road, Storrs, CT 06269 (United States); Space Vehicles Directorate, Air Force Research Lab (AFRL), Kirtland AFB, NM 87117 (United States); Sinkovic, B. [Space Vehicles Directorate, Air Force Research Lab (AFRL), Kirtland AFB, NM 87117 (United States); Yang, See-Hun; Parkin, S.S.P. [IBM Amaden Research Center, 650 Harry Road, San Jose, CA 95120 (United States)

    2012-08-15

    Highlights: Black-Right-Pointing-Pointer This work concludes the presence of oxide in MgO/transition-metal bi-layers. Black-Right-Pointing-Pointer Thermal annealing causes a possible structural transformation of the oxide. Black-Right-Pointing-Pointer This is first evidence for a possible structural change of the oxide. Black-Right-Pointing-Pointer First use of the O K-edge XAS signature of TM oxides to confirm presence of oxide. Black-Right-Pointing-Pointer We see a diffusion of oxygen and a decrease in interface roughness. -- Abstract: X-ray absorption spectroscopy and X-ray scattering have been used to determine the oxidation reactions at the buried MgO/Fe interface as a result of the deposition of MgO. We confirm that Fe-oxide is present at the MgO/Fe and MgO/CoFe interfaces and amounts to less than 1 mL in thickness. The Fe-oxide is a mixture of different iron oxide phases within the ultra-thin layer which can be reduced following annealing. We observe the transformation of the interfacial oxide from a more Fe{sub 2}O{sub 3}-like phase to a more FeO-like phase following annealing, and that this process is most noticeable between the 200 and 350 Degree-Sign C annealing steps. In addition, the formation of a more bulk like MgO electronic structure following annealing was observed.

  20. Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics

    International Nuclear Information System (INIS)

    Yan Hongli; Jia Renxu; Tang Xiaoyan; Song Qingwen; Zhang Yuming

    2014-01-01

    The effect of the different re-oxidation annealing (ROA) processes on the SiO 2 /SiC interface characteristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance—voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 °C for 30 min, while a large number of effective dielectric charges are generated. The components at the SiO 2 /SiC interface are analyzed by X-ray photoelectron spectroscopy (XPS) testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process. (semiconductor technology)

  1. Oxide/water interfaces: how the surface chemistry modifies interfacial water properties

    International Nuclear Information System (INIS)

    Gaigeot, Marie-Pierre; Sprik, Michiel; Sulpizi, Marialore

    2012-01-01

    The organization of water at the interface with silica and alumina oxides is analysed using density functional theory-based molecular dynamics simulation (DFT-MD). The interfacial hydrogen bonding is investigated in detail and related to the chemistry of the oxide surfaces by computing the surface charge density and acidity. We find that water molecules hydrogen-bonded to the surface have different orientations depending on the strength of the hydrogen bonds and use this observation to explain the features in the surface vibrational spectra measured by sum frequency generation spectroscopy. In particular, ‘ice-like’ and ‘liquid-like’ features in these spectra are interpreted as the result of hydrogen bonds of different strengths between surface silanols/aluminols and water. (paper)

  2. A study into the impact of interface roughness development on mechanical degradation of oxides formed on zirconium alloys

    International Nuclear Information System (INIS)

    Platt, P.; Wedge, S.; Frankel, P.; Gass, M.; Howells, R.; Preuss, M.

    2015-01-01

    As a cladding material used to encapsulate nuclear fuel pellets, zirconium alloys are the primary barrier separating the fuel and a pressurised steam or lithiated water environment. Degradation mechanisms such as oxidation can be the limiting factor in the life-time of the fuel assembly. Key to controlling oxidation, and therefore allowing increased burn-up of fuel, is the development of a mechanistic understanding of the corrosion process. In an autoclave, the oxidation kinetics for zirconium alloys are typically cyclical, with periods of accelerated kinetics being observed in steps of ∼2 μm oxide growth. These periods of accelerated oxidation are immediately preceded by the development of a layer of lateral cracks near the metal-oxide interface, which may be associated with the development of interface roughness. The present work uses scanning electron microscopy to carry out a statistical analysis of changes in the metal-oxide interface roughness between three different alloys at different stages of autoclave oxidation. The first two alloys are Zircaloy-4 and ZIRLO ™ for which analysis is carried out at stages before, during and after first transition. The third alloy is an experimental low tin alloy, which under the same oxidation conditions and during the same time period does not appear to go through transition. Assessment of the metal-oxide interface roughness is primarily carried out based on the root mean square of the interface slope known as the R dq parameter. Results show clear trends with relation to transition points in the corrosion kinetics. Discussion is given to how this relates to the existing mechanistic understanding of the corrosion process, and the components required for possible future modelling approaches

  3. Diabetes-Induced Oxidative Stress in Endothelial Progenitor Cells May Be Sustained by a Positive Feedback Loop Involving High Mobility Group Box-1

    Directory of Open Access Journals (Sweden)

    Han Wu

    2016-01-01

    Full Text Available Oxidative stress is considered to be a critical factor in diabetes-induced endothelial progenitor cell (EPC dysfunction, although the underlying mechanisms are not fully understood. In this study, we investigated the role of high mobility group box-1 (HMGB-1 in diabetes-induced oxidative stress. HMGB-1 was upregulated in both serum and bone marrow-derived monocytes from diabetic mice compared with control mice. In vitro, advanced glycation end productions (AGEs induced, expression of HMGB-1 in EPCs and in cell culture supernatants in a dose-dependent manner. However, inhibition of oxidative stress with N-acetylcysteine (NAC partially inhibited the induction of HMGB-1 induced by AGEs. Furthermore, p66shc expression in EPCs induced by AGEs was abrogated by incubation with glycyrrhizin (Gly, while increased superoxide dismutase (SOD activity in cell culture supernatants was observed in the Gly treated group. Thus, HMGB-1 may play an important role in diabetes-induced oxidative stress in EPCs via a positive feedback loop involving the AGE/reactive oxygen species/HMGB-1 pathway.

  4. Study on component interface evolution of a solid oxide fuel cell stack after long term operation

    Science.gov (United States)

    Yang, Jiajun; Huang, Wei; Wang, Xiaochun; Li, Jun; Yan, Dong; Pu, Jian; Chi, Bo; Li, Jian

    2018-05-01

    A 5-cell solid oxide fuel cell (SOFC) stack with external manifold structure is assembled and underwent a durability test with an output of 250 W for nearly 4400 h when current density and operating temperature are 355 mA/cm2 and 750 °C. Cells used in the stack are anode-supported cells (ASC) with yttria-stabilized zirconia (YSZ) electrolytes, Ni/YSZ hydrogen electrodes, and YSZ based composite cathode. The dimension of the cell is 150 × 150 mm (active area: 130 × 130 mm). Ceramic-glass sealant is used in the stack to keep the gas tightness between cells, interconnects and manifolds. Pure hydrogen and dry air are used as fuel and oxidant respectively. The stack has a maximum output of 340 W at 562 mA/cm2 current density at 750 °C. The stack shows a degradation of 1.5% per 1000 h during the test with 2 thermal cycles to room temperature. After the test, the stack was dissembled and examined. The relationship between microstructure changes of interfaces and degradation in the stack are discussed. The microstructure evolution of interfaces between electrode, contact material and current collector are unveiled and their relationship with the degradation is discussed.

  5. Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

    Science.gov (United States)

    Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

    2004-10-01

    Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

  6. Molecular Computational Investigation of Electron Transfer Kinetics across Cytochrome-Iron Oxide Interfaces

    International Nuclear Information System (INIS)

    Kerisit, Sebastien N.; Rosso, Kevin M.; Dupuis, Michel; Valiev, Marat

    2007-01-01

    The interface between electron transfer proteins such as cytochromes and solid phase mineral oxides is central to the activity of dissimilatory-metal reducing bacteria. A combination of potential-based molecular dynamics simulations and ab initio electronic structure calculations are used in the framework of Marcus' electron transfer theory to compute elementary electron transfer rates from a well-defined cytochrome model, namely the small tetraheme cytochrome (STC) from Shewanella oneidensis, to surfaces of the iron oxide mineral hematite (a-Fe2O3). Room temperature molecular dynamics simulations show that an isolated STC molecule favors surface attachment via direct contact of hemes I and IV at the poles of the elongated axis, with electron transfer distances as small as 9 Angstroms. The cytochrome remains attached to the mineral surface in the presence of water and shows limited surface diffusion at the interface. Ab initio electronic coupling matrix element (VAB) calculations of configurations excised from the molecular dynamics simulations reveal VAB values ranging from 1 to 20 cm-1, consistent with nonadiabaticity. Using these results, together with experimental data on the redox potential of hematite and hemes in relevant cytochromes and calculations of the reorganization energy from cluster models, we estimate the rate of electron transfer across this model interface to range from 1 to 1000 s-1 for the most exothermic driving force considered in this work, and from 0.01 to 20 s-1 for the most endothermic. This fairly large range of electron transfer rates highlights the sensitivity of the rate upon the electronic coupling matrix element, which is in turn dependent on the fluctuations of the heme configuration at the interface. We characterize this dependence using an idealized bis-imidazole heme to compute from first principles the VAB variation due to porphyrin ring orientation, electron transfer distance, and mineral surface termination. The electronic

  7. Glove box

    International Nuclear Information System (INIS)

    Morita, Atsushi

    1990-01-01

    Wire rope earthquake proof supports having sufficient vibration transmitting and attenuating property are disposed between a fixed floor and the bottom of a glove box in order to improve earthquake proofness of the glove box. The vertical weight of the glove box is supported by support legs slidable on the surface of the fixed floor. The wire rope earthquake-proof supports when undergoing a load, cause stretching and rolling against the external force such as earthquakes, and provide flexible spring support and cause a great damping due to friction with strands. Further, the vertical weight is always supported by the support legs and, when a horizontal weight is applied, the glove box slides on the fixed floor freely with slidable members. In this way, stress concentration generated at joint portions of columns and beams can be moderated greatly and earthquake proofness can be improved. Further, quality control and maintenance for the device is almost unnecessary owing to excellent fatigue-resistant characteristics of the wire rope earthquake proof supports. (N.H.)

  8. Microarray study of temperature-dependent sensitivity and selectivity of metal/oxide sensing interfaces

    Science.gov (United States)

    Tiffany, Jason; Cavicchi, Richard E.; Semancik, Stephen

    2001-02-01

    Conductometric gas microsensors offer the benefits of ppm-level sensitivity, real-time data, simple interfacing to electronics hardware, and low power consumption. The type of device we have been exploring consists of a sensor film deposited on a "microhotplate"- a 100 micron platform with built-in heating (to activate reactions on the sensing surface) and thermometry. We have been using combinatorial studies of 36-element arrays to characterize the relationship between sensor film composition, operating temperature, and response, as measured by the device's sensitivity and selectivity. Gases that have been tested on these arrays include methanol, ethanol, dichloromethane, propane, methane, acetone, benzene, hydrogen, and carbon monoxide, and are of interest in the management of environmental waste sites. These experiments compare tin oxide films modified by catalyst overlayers, and ultrathin metal seed layers. The seed layers are used as part of a chemical vapor deposition process that uses each array element's microheater to activate the deposition of SnO2, and control its microstructure. Low coverage (20 Ê) catalytic metals (Pd, Cu, Cr, In, Au) are deposited on the oxides by masked evaporation or sputtering. This presentation demonstrates the value of an array-based approach for developing film processing methods, measuring performance characteristics, and establishing reproducibility. It also illustrates how temperature-dependent response data for varied metal/oxide compositions can be used to tailor a microsensor array for a given application.

  9. A dual enzyme functionalized nanostructured thulium oxide based interface for biomedical application

    Science.gov (United States)

    Singh, Jay; Roychoudhury, Appan; Srivastava, Manish; Solanki, Pratima R.; Lee, Dong Won; Lee, Seung Hee; Malhotra, B. D.

    2013-12-01

    In this paper, we present results of the studies related to fabrication of a rare earth metal oxide based efficient biosensor using an interface based on hydrothermally prepared nanostructured thulium oxide (n-Tm2O3). A colloidal solution of prepared nanorods has been electrophoretically deposited (EPD) onto an indium-tin-oxide (ITO) glass substrate. The n-Tm2O3 nanorods are found to provide improved sensing characteristics to the electrode interface in terms of electroactive surface area, diffusion coefficient, charge transfer rate constant and electron transfer kinetics. The structural and morphological studies of n-Tm2O3 nanorods have been carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopic techniques. This interfacial platform has been used for fabrication of a total cholesterol biosensor by immobilizing cholesterol esterase (ChEt) and cholesterol oxidase (ChOx) onto a Tm2O3 nanostructured surface. The results of response studies of the fabricated ChEt-ChOx/n-Tm2O3/ITO bioelectrode show a broad linear range of 8-400 mg dL-1, detection limit of 19.78 mg (dL cm-2)-1, and high sensitivity of 0.9245 μA (mg per dL cm-2)-1 with a response time of 40 s. Further, this bioelectrode has been utilized for estimation of total cholesterol with negligible interference (3%) from analytes present in human serum samples. The utilization of this n-Tm2O3 modified electrode for enzyme-based biosensor analysis offers an efficient strategy and a novel interface for application of the rare earth metal oxide materials in the field of electrochemical sensors and bioelectronic devices.In this paper, we present results of the studies related to fabrication of a rare earth metal oxide based efficient biosensor using an interface based on hydrothermally prepared nanostructured thulium oxide (n-Tm2O3). A colloidal solution of prepared

  10. Glove boxes

    International Nuclear Information System (INIS)

    Eisert, G.A.

    1979-01-01

    An arrangement for effecting access for performing work within a glove box comprises an elongate arm-length impermeable flexible sleeve, a fitting having an aperture therethrough, adapted to be secured in sealing relation in a port, in a wall of the glove box, the fitting including an outwardly extending lip having at least one continuous groove extending around its outer periphery, one end of the sleeve extending through the aperture in fitting and being folded back against the outer periphery of the lip, a resilient fastening ring securing the sleeve in sealing engagement in the groove, clamping means securing the sleeves to the lip and a glove secured in sealing relation via a bushing to the other end of the sleeve. (author)

  11. X-box binding protein 1 is essential for the anti-oxidant defense and cell survival in the retinal pigment epithelium.

    Directory of Open Access Journals (Sweden)

    Yimin Zhong

    Full Text Available Damage to the retinal pigment epithelium (RPE is an early event in the pathogenesis of age-related macular degeneration (AMD. X-box binding protein 1 (XBP1 is a key transcription factor that regulates endoplasmic reticulum (ER homeostasis and cell survival. This study aimed to delineate the role of endogenous XBP1 in the RPE. Our results show that in a rat model of light-induced retinal degeneration, XBP1 activation was suppressed in the RPE/choroid complex, accompanied by decreased anti-oxidant genes and increased oxidative stress. Knockdown of XBP1 by siRNA resulted in reduced expression of SOD1, SOD2, catalase, and glutathione synthase and sensitized RPE cells to oxidative damage. Using Cre/LoxP system, we generated a mouse line that lacks XBP1 only in RPE cells. Compared to wildtype littermates, RPE-XBP1 KO mice expressed less SOD1, SOD2, and catalase in the RPE, and had increased oxidative stress. At age 3 months and older, these mice exhibited apoptosis of RPE cells, decreased number of cone photoreceptors, shortened photoreceptor outer segment, reduced ONL thickness, and deficit in retinal function. Electron microscopy showed abnormal ultrastructure, Bruch's membrane thickening, and disrupted basal membrane infolding in XBP1-deficient RPE. These results indicate that XBP1 is an important gene involved in regulation of the anti-oxidant defense in the RPE, and that impaired activation of XBP1 may contribute to RPE dysfunction and cell death during retinal degeneration and AMD.

  12. Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

    International Nuclear Information System (INIS)

    Hahn, Herwig; Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

    2015-01-01

    In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10 13  cm –2 allowing to considerably shift the threshold voltage to more positive values

  13. X-ray irradiation effects of interface traps and trapped-oxide charge at the Si-SiO{sub 2} interface of segmented silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kopsalis, Ioannis; Fretwurst, Eckhart; Garutti, Erika; Klanner, Robert; Schwandt, Joern [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

    2016-07-01

    The surface radiation damage of SiO{sub 2} grown on high-ohmic Si, as used for the fabrication of segmented silicon sensors, has been investigated. Circular p- and n-MOSFETs, biased in accumulation and inversion at a field in the SiO{sub 2} of about 500 kV/cm, have been irradiated by X-rays up to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation, the gate voltage has been cycled from inversion to accumulation conditions and back, and from the dependence of the drain-source current, on gate voltage, the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface determined. From the threshold voltage, the effective oxide-charge density is calculated. Using the subthreshold-current technique the contribution of interface traps, in the lower and the upper part of the energy Si bandgap, and of fixed oxide-charge to the effective oxide-charge density has been estimated. Results on the dose dependence of the above quantities, the charging-up and discharging of border traps when changing the gate voltage, and the hole and electron mobilities at the Si-SiO{sub 2} interface are presented.

  14. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  15. Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

    Science.gov (United States)

    Taoka, Noriyuki; Kubo, Toshiharu; Yamada, Toshikazu; Egawa, Takashi; Shimizu, Mitsuaki

    2018-01-01

    The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (D it) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small D it values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.

  16. Atomically-resolved mapping of polarization and electric fields across ferroelectric-oxide interfaces by Z-contrast imaging

    Science.gov (United States)

    Borisevich, Albina; Chang, Hye Jung; Kalinin, Sergei; Morozovska, Anna; Chu, Ying-Hao; Yu, Pu; Ramesh, Ramamoorthy; Pennycook, Stephen

    2011-03-01

    Polarization, electric field, charge and potential across ferroelectric-oxide interfaces are obtained from direct atomic position mapping by aberration corrected scanning transmission electron microscopy combined with Ginsburg-Landau-Devonshire theory. We compare two antiparallel polarization orientations, which allows separation of the polarization and intrinsic interface charge contributions. Using the Born effective charges, the complete interface electrostatics is obtained in real space, providing an alternative method to holography. The results provide new microscopic insight into the thermodynamics of polarization distribution at the atomic level. Research is sponsored by the of Materials Sciences and Engineering Division, U.S. DOE.

  17. Simultaneously 'pushing' and 'pulling' graphene oxide into low-polar solvents through a designed interface.

    Science.gov (United States)

    Liu, Zhen; Liu, Jingquan; Wang, Yichao; Razal, Joselito M; Francis, Paul S; Biggs, Mark J; Barrow, Colin J; Yang, Wenrong

    2018-08-03

    Dispersing graphene oxide (GO) in low-polar solvents can realize a perfect self-assembly with functional molecules and application in removal of organic impurities that only dissolve in low-polar solvents. The surface chemistry of GO plays an important role in its dispersity in these solvents. The direct transfer of hydrophilic GO into low-polar solvents, however, has remained an experimental challenge. In this study, we design an interface to transfer GO by simultaneously 'pushing and pulling' the nanosheets into low-polar solvents. Our approach is outstanding due to the ability to obtain monolayers of chemically reduced GO (CRGO) with designed surface properties in the organic phase. Using the transferred GO or CRGO dispersions, we have fabricated GO/fullerene nanocomposites and assessed the ability of CRGOs for dye adsorption. We hope our work can provide a universal approach for the phase transfer of other nanomaterials.

  18. Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

    Science.gov (United States)

    Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

    2017-12-01

    The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

  19. Non intrusive measurement of residual moisture rate of plutonium oxide powder in sealed boxes; Mesure non intrusive du taux d`humidite residuel de la poudre d`oxyde de plutonium contenue dans des boites scellees

    Energy Technology Data Exchange (ETDEWEB)

    Pochet, T.; Edeline, J.C.; Domenech, T.

    1993-12-31

    This document deals with the best method to create a non intrusive measurement of residual moisture of plutonium oxide in stainless steel sealed boxes (sensibility, precision, reproducibility and feasibility in laboratory). This method is the neutron spectrometry by {sup 3}He (n,p) {sup 3}He reaction. (TEC). 16 refs., 16 figs., 2 tabs.

  20. Symmetry-induced deformation and reconstructive phase transformation in metal-oxide interface: the Fe (001) example

    International Nuclear Information System (INIS)

    Lahoche, L.; Universite de Technologie de Compiegne; Lorman, V.; Roelandt, J.M.; Rochal, S.B.

    1996-01-01

    A model is proposed for the structural transformation and corresponding induced deformation in physical three-dimensional interface of the metal-oxide system. The thermodynamical and elastic state of the system is described by the Landau-Ginzbourg free energy. Calculated theoretical phase diagram shows several different types of isothermal growth processes. The model is applied to the case of the oxidation of the (001) Fe surface. (orig.)

  1. Real-time Kinetics of High-mobility Group Box 1 (HMGB1) Oxidation in Extracellular Fluids Studied by in Situ Protein NMR Spectroscopy*

    Science.gov (United States)

    Zandarashvili, Levani; Sahu, Debashish; Lee, Kwanbok; Lee, Yong Sun; Singh, Pomila; Rajarathnam, Krishna; Iwahara, Junji

    2013-01-01

    Some extracellular proteins are initially secreted in reduced forms via a non-canonical pathway bypassing the endoplasmic reticulum and become oxidized in the extracellular space. One such protein is HMGB1 (high-mobility group box 1). Extracellular HMGB1 has different redox states that play distinct roles in inflammation. Using a unique NMR-based approach, we have investigated the kinetics of HMGB1 oxidation and the half-lives of all-thiol and disulfide HMGB1 species in serum, saliva, and cell culture medium. In this approach, salt-free lyophilized 15N-labeled all-thiol HMGB1 was dissolved in actual extracellular fluids, and the oxidation and clearance kinetics were monitored in situ by recording a series of heteronuclear 1H-15N correlation spectra. We found that the half-life depends significantly on the extracellular environment. For example, the half-life of all-thiol HMGB1 ranged from ∼17 min (in human serum and saliva) to 3 h (in prostate cancer cell culture medium). Furthermore, the binding of ligands (glycyrrhizin and heparin) to HMGB1 significantly modulated the oxidation kinetics. Thus, the balance between the roles of all-thiol and disulfide HMGB1 proteins depends significantly on the extracellular environment and can also be artificially modulated by ligands. This is important because extracellular HMGB1 has been suggested as a therapeutic target for inflammatory diseases and cancer. Our work demonstrates that the in situ protein NMR approach is powerful for investigating the behavior of proteins in actual extracellular fluids containing an enormous number of different molecules. PMID:23447529

  2. Boxing clever

    Energy Technology Data Exchange (ETDEWEB)

    Stanbury, Kate

    1999-09-10

    The outages caused by storms bringing down trees on power transmission lines on Boxing Day 1998 in Scotland, Northern Ireland and Northern England forced ScottishPower to modify its pylon policy. The results of the analysis of pylons requiring work by the Rural Care Team at ScottishPower are summarised, and the identification of the problems caused by the Sitk spruce is reported. The selection of the relocation and clearance remediation option, the policy of replacing one tree with two, the approach to landowners, and the need to consider environmental concerns during the planning of networks are discussed. (UK)

  3. Giant photoresponse in quantized SrRuO3 monolayer at oxide interfaces

    KAUST Repository

    Liu, Heng-Jui

    2018-02-01

    The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm2 is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.

  4. Giant photoresponse in quantized SrRuO3 monolayer at oxide interfaces

    KAUST Repository

    Liu, Heng-Jui; Wang, Jing-Ching; Cho, Deok-Yong; Ho, Kang-Ting; Lin, Jheng-Cyuan; Huang, Bo-Chao; Fang, Yue-Wen; Zhu, Yuan-Min; Zhan, Qian; Xie, Lin; Pan, Xiao-Qing; Chiu, Ya-Ping; Duan, Chun-Gang; He, Jr-Hau; Chu, Ying-Hao

    2018-01-01

    The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm2 is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.

  5. Ab Initio Thermodynamic Modeling of Electrified Metal–Oxide Interfaces: Consistent Treatment of Electronic and Ionic Chemical Potentials

    DEFF Research Database (Denmark)

    Zeng, Zhenhua; Hansen, Martin Hangaard; Greeley, Jeffrey Philip

    2014-01-01

    . In this paper we present a scheme to determine the metal–oxide interface structure at a given set of these environmental parameters based on quantum chemical calculations. As an illustration we determine the structure of a Ni-YSZ anode as a function of electrode potential at 0 and 1000 K. We further describe...

  6. Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Trier, Felix; Kasama, Takeshi

    2015-01-01

    The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Rem...

  7. Effects of oxide replacement with fluoride at the CoFeB interface on interface magnetic anisotropy and its voltage control

    Science.gov (United States)

    Pankieiev, Mykhailo; Kita, Koji

    2018-05-01

    In this paper we report results of improving Co60Fe20B20 interface perpendicular magnetic anisotropy (PMA) by replacing neighbor oxide layer with fluoride one. We expected that fluorine as element with higher than oxide electronegativity could more effectively attract electrons from out-of-plane d orbitals of ferromagnetic, increasing role of in-plane orbitals. By this we wanted to increase PMA and its response to applied voltage bias. Polar magneto-optic Kerr effect measurement show decreasing of out-of-plane magnetic field needed to change magnetization to perpendicular in stacks with oxygen replaced by fluorine as well as increasing of coefficient of response to applied voltage α from < 10 fJ/Vm for CoFeB/Al2O3 interface to 20 fJ/Vm for CoFeB/AlF3/Al2O3 and 22 fJ/Vm for CoFeB/MgF2 stacks. Direct chemical interaction of Co with F was confirmed by x-ray photoelectron spectroscopy (XPS) measurement of Co2p core level region. Moreover angular-resolved XPS showed that F tends to stay at CoFeB interface rather than diffuse out of it.

  8. Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Green, Robert J.; Sutarto, Ronny

    2017-01-01

    Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar La7/8Sr1/8MnO3 (LSMO) buffer layers to manipulate both...... polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant x-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how...... these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer...

  9. Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Borgatti, F., E-mail: francesco.borgatti@cnr.it [Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), via P. Gobetti 101, Bologna I-40129 (Italy); Torelli, P.; Panaccione, G. [Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, Trieste I-34149 (Italy)

    2016-04-15

    Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

  10. Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

    International Nuclear Information System (INIS)

    Borgatti, F.; Torelli, P.; Panaccione, G.

    2016-01-01

    Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

  11. Luteolin and fisetin suppress oxidative stress by modulating sirtuins and forkhead box O3a expression under in vitro diabetic conditions.

    Science.gov (United States)

    Kim, Arang; Lee, Wooje; Yun, Jung-Mi

    2017-10-01

    Chronic hyperglycemia induces oxidative stress via accumulation of reactive oxygen species (ROS) and contributes to diabetic complications. Hyperglycemia induces mitochondrial superoxide anion production through the increased activity of nicotinamide adenine dinucleotide phosphate (NADPH) oxidase. This study aimed to determine whether fisetin and luteolin treatments suppress the oxidative stress by modulating the expression of sirtuins (SIRTs) and forkhead box O3a (FOXO3a) under hyperglycemic conditions in human monocytes. Human monocytic cells (THP-1) were cultured under osmotic control (14.5 mmol/L mannitol), normoglycemic (NG, 5.5 mmol/L glucose), or hyperglycemic (HG, 20 mmol/L glucose) conditions, in the absence or presence of fisetin and luteolin for 48 h. To determine the effect of fisetin and luteolin treatments on high glucose-induced oxidative stress, western blotting and intracellular staining were performed. Hyperglycemic conditions increased the ROS production, as compared to normoglycemic condition. However, fisetin and luteolin treatments inhibited ROS production under hyperglycemia. To obtain further insight into ROS production in hyperglycemic conditions, evaluation of p47phox expression revealed that fisetin and luteolin treatments inhibited p47phox expression under hyperglycemic conditions. Conversely, the expression levels of SIRT1, SIRT3, SIRT6, and FOXO3a were decreased under high glucose conditions compared to normal glucose conditions, but exposure to fisetin and luteolin induced the expression of SIRT1, SIRT3, SIRT6, and FOXO3a. The above findings suggest that fisetin and luteolin inhibited high glucose-induced ROS production in monocytes through the activation of SIRTs and FOXO3a. The results of our study supports current researches that state fisetin and luteolin as potential agents for the development of novel strategies for diabetes.

  12. Interaction at the silicon/transition metal oxide heterojunction interface and its effect on the photovoltaic performance.

    Science.gov (United States)

    Liang, Zhimin; Su, Mingze; Zhou, Yangyang; Gong, Li; Zhao, Chuanxi; Chen, Keqiu; Xie, Fangyan; Zhang, Weihong; Chen, Jian; Liu, Pengyi; Xie, Weiguang

    2015-11-07

    The interfacial reaction and energy level alignment at the Si/transition metal oxide (TMO, including MoO3-x, V2O5-x, WO3-x) heterojunction are systematically investigated. We confirm that the interfacial reaction appears during the thermal deposition of TMO, with the reaction extent increasing from MoO3-x, to V2O5-x, and to WO3-x. The reaction causes the surface oxidation of silicon for faster electron/hole recombination, and the reduction of TMO for effective hole collection. The photovoltaic performance of the Si/TMO heterojunction devices is affected by the interface reaction. MoO3-x are the best hole selecting materials that induce least surface oxidation but strongest reduction. Compared with H-passivation, methyl group passivation is an effective way to reduce the interface reaction and improve the interfacial energy level alignment for better electron and hole collection.

  13. Critical assessment of finite element analysis applied to metal–oxide interface roughness in oxidising zirconium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Platt, P., E-mail: Philip.Platt@manchester.ac.uk [University of Manchester, School of Materials, Materials Performance Centre, Manchester M13 9PL (United Kingdom); Frankel, P. [University of Manchester, School of Materials, Materials Performance Centre, Manchester M13 9PL (United Kingdom); Gass, M. [AMEC, Walton House, Faraday Street, Birchwood Park, Risley, Warrington WA3 6GA (United Kingdom); Preuss, M. [University of Manchester, School of Materials, Materials Performance Centre, Manchester M13 9PL (United Kingdom)

    2015-09-15

    As a nuclear fuel cladding material, zirconium alloys act as a barrier between the fuel and pressurised steam or lithiated water environment. Controlling degradation mechanisms such as oxidation is essential to extending the in-service lifetime of the fuel. At temperatures of ∼360 °C zirconium alloys are known to exhibit cyclical, approximately cubic corrosion kinetics. With acceleration in the oxidation kinetics occurring every ∼2 μm of oxide growth, and being associated with the formation of a network of lateral cracks. Finite element analysis has been used previously to explain the lateral crack formation by the development of localised out-of-plane tensile stresses at the metal–oxide interface. This work uses the Abaqus finite element code to assess critically current approaches to representing the oxidation of zirconium alloys, with relation to undulations at the metal–oxide interface and localised stress generation. This includes comparison of axisymmetric and 3D quartered modelling approaches, and investigates the effect of interface geometry and plasticity in the metal substrate. Particular focus is placed on the application of the anisotropic strain tensor used to represent the oxidation mechanism, which is typically applied with a fixed coordinate system. Assessment of the impact of the tensor showed that 99% of the localised tensile stresses originated from the out-of-plane component of the strain tensor, rather than the in-plane expansion as was previously thought. Discussion is given to the difficulties associated with this modelling approach and the requirements for future simulations of the oxidation of zirconium alloys.

  14. The Role of Interfaces in Polyethylene/Metal-Oxide Nanocomposites for Ultrahigh-Voltage Insulating Materials.

    Science.gov (United States)

    Pourrahimi, Amir Masoud; Olsson, Richard T; Hedenqvist, Mikael S

    2018-01-01

    Recent progress in the development of polyethylene/metal-oxide nanocomposites for extruded high-voltage direct-current (HVDC) cables with ultrahigh electric insulation properties is presented. This is a promising technology with the potential of raising the upper voltage limit in today's underground/submarine cables, based on pristine polyethylene, to levels where the loss of energy during electric power transmission becomes low enough to ensure intercontinental electric power transmission. The development of HVDC insulating materials together with the impact of the interface between the particles and the polymer on the nanocomposites electric properties are shown. Important parameters from the atomic to the microlevel, such as interfacial chemistry, interfacial area, and degree of particle dispersion/aggregation, are discussed. This work is placed in perspective with important work by others, and suggested mechanisms for improved insulation using nanoparticles, such as increased charge trap density, adsorption of impurities/ions, and induced particle dipole moments are considered. The effects of the nanoparticles and of their interfacial structures on the mechanical properties and the implications of cavitation on the electric properties are also discussed. Although the main interest in improving the properties of insulating polymers has been on the use of nanoparticles, leading to nanodielectrics, it is pointed out here that larger microscopic hierarchical metal-oxide particles with high surface porosity also impart good insulation properties. The impact of the type of particle and its inherent properties (purity and conductivity) on the nanocomposite dielectric and insulating properties are also discussed based on data obtained by a newly developed technique to directly observe the charge distribution on a nanometer scale in the nanocomposite. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Microstructure and Oxidation of a MAX Phase/Superalloy Hybrid Interface

    Science.gov (United States)

    Smialek, James L.; Garg, Anita

    2014-01-01

    Corrosion resistant, strain tolerant MAX phase coatings are of interest for turbine applications. Thin Cr2AlC MAX phase wafers were vacuum diffusion bonded to an advanced turbine disk alloy, LSHR, at 1100 C. The interface, examined by optical and scanning electron microscopy, revealed a primary diffusion zone consisting of 10 micrometers of beta-Ni(Co)Al, decorated with various NiCoCrAl, MC and M3B2 precipitates. On the Cr2AlC side, an additional 40 micrometers Al-depletion zone of Cr7C3 formed in an interconnected network with the beta-Ni(Co)Al. Oxidation of an exposed edge at 800 C for 100 h produced a fine-grained lenticular alumina scale over Cr2AlC and beta-Ni(Co)Al, with coarser chromia granules over the Cr7C3 regions. Subsequent growth of the diffusion layers was only 5 micrometers in total. A residual stress of 500 MPa was estimated for the MAX phase layer, but no interfacial damage was observed. Subsequent tests for 1000 h reveal similar results.

  16. Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

    2014-06-30

    We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

  17. Box Integrals

    Energy Technology Data Exchange (ETDEWEB)

    Bailey, David H.; Borwein, Jonathan M.; Crandall, Richard E.

    2006-06-01

    By a "box integral" we mean here an expectation $\\langle|\\vec r - \\vec q|^s \\rangle$ where $\\vec r$runs over the unit $n$-cube,with $\\vec q$ and $s$ fixed, explicitly:\\begin eqnarray*&&\\int_01 \\cdots \\int_01 \\left((r_1 - q_1)2 + \\dots+(r_n-q_n)2\\right)^ s/2 \\ dr_1 \\cdots dr_n.\\end eqnarray* The study ofbox integrals leads one naturally into several disparate fields ofanalysis. While previous studies have focused upon symbolic evaluationand asymptotic analysis of special cases (notably $s = 1$), we workherein more generally--in interdisciplinary fashion--developing resultssuch as: (1) analytic continuation (in complex $s$), (2) relevantcombinatorial identities, (3) rapidly converging series, (4) statisticalinferences, (5) connections to mathematical physics, and (6)extreme-precision quadrature techniques appropriate for these integrals.These intuitions and results open up avenues of experimental mathematics,with a view to new conjectures and theorems on integrals of thistype.

  18. Interplay between magnetic and dielectric phenomena at transition metal oxide interfaces

    International Nuclear Information System (INIS)

    Schumacher, Daniel

    2013-01-01

    The present work is concerned with the preparation, characterization and analysis of thin film heterostructures of perovskite oxide materials. Two different systems have been analyzed in detail: La 0.66 Sr 0.33 MnO 3 /SrTiO 3 (LSMO/STO) heterostructures have been investigated in order to understand the unusual occurrence of an exchange bias effect in multilayers of these two oxides. Monocrystalline LSMO single and LSMO/STO bilayers have been grown on STO by both High Oxygen Pressure Sputter Deposition (HSD) and Pulsed Laser Deposition. It was possible to reproduce the Exchange Bias effect in the samples grown by HSD by reducing the oxygen pressure during the layer growth. In fact, the size of the effect can be increased by further reduction of the oxygen pressure. The macroscopic sample analysis by X-ray Diffraction and Vibrating Sample Magnetometry suggests that the occurence of the Exchange Bias effect is linked to oxygen deficiencies in the LSMO layer. By combining X-ray Reflectometry, Polarized Neutron Reflectometry and X-ray Resonant magnetic Scattering (XRMS), the magnetic depth profile of the samples has been determined. By this, a region in LSMO at the interface to STO has been detected, where the magnetic moment is strongly suppressed. By putting together the results of the macroscopic sample analysis and the scattering experiments, an explanation for the occurence of the effect can be given: It is proposed, that a combination of strain and oxygen deficiencies shifts the LSMO at the interface in the antiferromagnetic phase of the LSMO strain vs. doping phase diagram. This interface region thus couples to the ferromagnetic part of the LSMO causing the Exchange Bias effect. The second heterostructure system under investigation in this work are bilayers of La 0.5 Sr 0.5 MnO 3 (LSMO) and BaTiO 3 (BTO). A possible dependence of the interface near magnetic structure of La 1-x Sr x MnO 3 having a doping level x close to the ferromagnetic-antiferromagnetic phase

  19. Interplay between magnetic and dielectric phenomena at transition metal oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, Daniel

    2013-10-01

    The present work is concerned with the preparation, characterization and analysis of thin film heterostructures of perovskite oxide materials. Two different systems have been analyzed in detail: La{sub 0.66}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} (LSMO/STO) heterostructures have been investigated in order to understand the unusual occurrence of an exchange bias effect in multilayers of these two oxides. Monocrystalline LSMO single and LSMO/STO bilayers have been grown on STO by both High Oxygen Pressure Sputter Deposition (HSD) and Pulsed Laser Deposition. It was possible to reproduce the Exchange Bias effect in the samples grown by HSD by reducing the oxygen pressure during the layer growth. In fact, the size of the effect can be increased by further reduction of the oxygen pressure. The macroscopic sample analysis by X-ray Diffraction and Vibrating Sample Magnetometry suggests that the occurence of the Exchange Bias effect is linked to oxygen deficiencies in the LSMO layer. By combining X-ray Reflectometry, Polarized Neutron Reflectometry and X-ray Resonant magnetic Scattering (XRMS), the magnetic depth profile of the samples has been determined. By this, a region in LSMO at the interface to STO has been detected, where the magnetic moment is strongly suppressed. By putting together the results of the macroscopic sample analysis and the scattering experiments, an explanation for the occurence of the effect can be given: It is proposed, that a combination of strain and oxygen deficiencies shifts the LSMO at the interface in the antiferromagnetic phase of the LSMO strain vs. doping phase diagram. This interface region thus couples to the ferromagnetic part of the LSMO causing the Exchange Bias effect. The second heterostructure system under investigation in this work are bilayers of La{sub 0.5}Sr{sub 0.5}MnO{sub 3} (LSMO) and BaTiO{sub 3} (BTO). A possible dependence of the interface near magnetic structure of La{sub 1-x}Sr{sub x}MnO{sub 3} having a doping level x

  20. Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment

    Science.gov (United States)

    Landheer, Kees; Bronsveld, Paula C. P.; Poulios, Ioannis; Tichelaar, Frans D.; Kaiser, Monja; Schropp, Ruud E. I.; Rath, Jatin K.

    2017-02-01

    An Ar-H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c-Si/SiOx:H/a-Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar-H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c-Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.

  1. High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

    Science.gov (United States)

    Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

    2018-06-12

    Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

  2. Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

    Science.gov (United States)

    Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

    2018-06-01

    The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

  3. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  4. Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

    Science.gov (United States)

    Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

    2012-02-01

    The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

  5. Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Trier, Felix; Wijnands, T.

    2015-01-01

    as applied research of complex oxides. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more...

  6. A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors.

    Science.gov (United States)

    Chen, Weifeng; Wu, Weijing; Zhou, Lei; Xu, Miao; Wang, Lei; Ning, Honglong; Peng, Junbiao

    2018-03-11

    A semi-analytical extraction method of interface and bulk density of states (DOS) is proposed by using the low-frequency capacitance-voltage characteristics and current-voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs). In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson's equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco). As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS) simultaneously.

  7. A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Weifeng Chen

    2018-03-01

    Full Text Available A semi-analytical extraction method of interface and bulk density of states (DOS is proposed by using the low-frequency capacitance–voltage characteristics and current–voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs. In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson’s equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco. As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS simultaneously.

  8. A Universal Method to Engineer Metal Oxide-Metal-Carbon Interface for Highly Efficient Oxygen Reduction.

    Science.gov (United States)

    Lv, Lin; Zha, Dace; Ruan, Yunjun; Li, Zhishan; Ao, Xiang; Zheng, Jie; Jiang, Jianjun; Chen, Hao Ming; Chiang, Wei-Hung; Chen, Jun; Wang, Chundong

    2018-03-27

    Oxygen is the most abundant element in the Earth's crust. The oxygen reduction reaction (ORR) is also the most important reaction in life processes and energy converting/storage systems. Developing techniques toward high-efficiency ORR remains highly desired and a challenge. Here, we report a N-doped carbon (NC) encapsulated CeO 2 /Co interfacial hollow structure (CeO 2 -Co-NC) via a generalized strategy for largely increased oxygen species adsorption and improved ORR activities. First, the metallic Co nanoparticles not only provide high conductivity but also serve as electron donors to largely create oxygen vacancies in CeO 2 . Second, the outer carbon layer can effectively protect cobalt from oxidation and dissociation in alkaline media and as well imparts its higher ORR activity. In the meanwhile, the electronic interactions between CeO 2 and Co in the CeO 2 /Co interface are unveiled theoretically by density functional theory calculations to justify the increased oxygen absorption for ORR activity improvement. The reported CeO 2 -Co-NC hollow nanospheres not only exhibit decent ORR performance with a high onset potential (922 mV vs RHE), half-wave potential (797 mV vs RHE), and small Tafel slope (60 mV dec -1 ) comparable to those of the state-of-the-art Pt/C catalysts but also possess long-term stability with a negative shift of only 7 mV of the half-wave potential after 2000 cycles and strong tolerance against methanol. This work represents a solid step toward high-efficient oxygen reduction.

  9. Contact Resistance of Ceramic Interfaces Between Materials Used for Solid Oxide Fuel Cell Applications

    DEFF Research Database (Denmark)

    Koch, Søren

    The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may....... The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constric-tion at high temperatures. The measured contact resistance was comparable to the resis-tance calculated on basis of the contact...... areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential...

  10. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO{sub 2}/Si interfaces with low defect densities

    Energy Technology Data Exchange (ETDEWEB)

    Stegemann, Bert, E-mail: bert.stegemann@htw-berlin.de [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Gad, Karim M. [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Balamou, Patrice [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Sixtensson, Daniel [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Vössing, Daniel; Kasemann, Martin [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Angermann, Heike [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany)

    2017-02-15

    Highlights: • Fabrication of ultrathin SiO{sub 2} tunnel layers on c-Si. • Correlation of electronic and chemical SiO{sub 2}/Si interface properties revealed by XPS/SPV. • Chemically abrupt SiO{sub 2}/Si interfaces generate less interface defect states considerable. - Abstract: Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO{sub 2}/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO{sub 2}/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO{sub 2}/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO{sub 2}/Si interfaces have been shown to generate less interface defect states.

  11. E-Box. A residential gateway for cost saving and sustainability. Integration of Internet and ICT-networks for energy conservation services. Architecture and interface description of energy- and cost saving potential; E-Box. Een 'residential gateway' voor kostenbesparing en duurzaamheid. Integratie Internet en ICT-netwerken voor energiebesparingsdiensten. Architectuur en interface beschrijving Energie- en kostenbesparingspotentieel

    Energy Technology Data Exchange (ETDEWEB)

    Kamphuis, I.G. [ECN Duurzame Energie in de Gebouwde Omgeving DEGO, Petten (Netherlands)

    2003-01-01

    The results of a study on using new information and communication technology in small-scale energy management systems on the level of individual households are presented. Detailed requirements are formulated for such an energy management system. A hardware and software architecture is proposed based on existing standards for delivering service applications. A large part of the energy management functionality for such a E-box for energy efficiency and cost control has been implemented in a software prototype. The results of prototype simulation studies indicate that there is a cost saving potential and a potential for improved embedding of small scale, sustainable energy generators, if operations of appliances are co-ordinated in view of real-time market price signals. The potential (spread in cost plus or minus 15%) is highest for combined operation of small micro-CHP (Stirling motor powered or fuel cell installations) satisfying a house's heat demand with laundry washing and drying processes in a real time electricity pricing situation. A similar increase in cost effectiveness can be achieved, if buffering of energy-carriers (electricity or heat) is used. Possible market and business models for implementing the functionality of an E-box are dealt with and some possible implementation opportunities in a real-time price liberalised end user energy consumption market are discussed. [Dutch] De resultaten van een haalbaarheidsstudie naar de mogelijkheden van het gebruik van Internet-technologie en kleinschalige ICT-netwerken voor het opzetten van energie- en kosten-besparingsdiensten in woningen worden besproken. Vanuit de context van bestaande energie monitoring en management toepassingen in utiliteitsgebouwen wordt een vertaalslag gemaakt naar woningen. Aan de hand van een inventarisatie en definitie van een aantal voorbeeldtoepassingen is een globale vereistenspecificatie voor een energiemanagement systeem in woningen opgesteld. In deze vereistenspecificatie

  12. Interface control of atomic layer deposited oxide coatings by filtered cathodic arc deposited sublayers for improved corrosion protection

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, Emma, E-mail: emma.harkonen@helsinki.fi [Laboratory of Inorganic Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki (Finland); Tervakangas, Sanna; Kolehmainen, Jukka [DIARC-Technology Inc., Espoo (Finland); Díaz, Belén; Światowska, Jolanta; Maurice, Vincent; Seyeux, Antoine; Marcus, Philippe [Laboratoire de Physico-Chimie des Surfaces, CNRS (UMR 7075) – Chimie ParisTech (ENSCP), F-75005 Paris (France); Fenker, Martin [FEM Research Institute, Precious Metals and Metals Chemistry, D-73525 Schwäbisch Gmünd (Germany); Tóth, Lajos; Radnóczi, György [Research Centre for Natural Sciences HAS, (MTA TKK), Budapest (Hungary); Ritala, Mikko [Laboratory of Inorganic Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki (Finland)

    2014-10-15

    Sublayers grown with filtered cathodic arc deposition (FCAD) were added under atomic layer deposited (ALD) oxide coatings for interface control and improved corrosion protection of low alloy steel. The FCAD sublayer was either Ta:O or Cr:O–Ta:O nanolaminate, and the ALD layer was Al{sub 2}O{sub 3}–Ta{sub 2}O{sub 5} nanolaminate, Al{sub x}Ta{sub y}O{sub z} mixture or graded mixture. The total thicknesses of the FCAD/ALD duplex coatings were between 65 and 120 nm. Thorough analysis of the coatings was conducted to gain insight into the influence of the FCAD sublayer on the overall coating performance. Similar characteristics as with single FCAD and ALD coatings on steel were found in the morphology and composition of the duplex coatings. However, the FCAD process allowed better control of the interface with the steel by reducing the native oxide and preventing its regrowth during the initial stages of the ALD process. Residual hydrocarbon impurities were buried in the interface between the FCAD layer and steel. This enabled growth of ALD layers with improved electrochemical sealing properties, inhibiting the development of localized corrosion by pitting during immersion in acidic NaCl and enhancing durability in neutral salt spray testing. - Highlights: • Corrosion protection properties of ALD coatings were improved by FCAD sublayers. • The FCAD sublayer enabled control of the coating-substrate interface. • The duplex coatings offered improved sealing properties and durability in NSS. • The protective properties were maintained during immersion in a corrosive solution. • The improvements were due to a more ideal ALD growth on the homogeneous FCAD oxide.

  13. Contact resistance of ceramic interfaces between materials used for solid oxide fuel cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Koch, S.

    2002-01-01

    The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may be smaller or larger than the constriction resistance. The contact resistance between pairs of three different materials were analysed (strontium doped lanthanum manganite, yttria stabilised zirconia and strontium and nickel doped lanthanum cobaltite), and the effects of temperature, atmosphere, polarisation and mechanical load on the contact resistance were investigated. The investigations revealed that the mechanical load of a ceramic contact has a high influence on the contact resistance, and generally power law dependence between the contact resistance and the mechanical load was found. The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constriction at high temperatures. The measured contact resistance was comparable to the resistance calculated on basis of the contact areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential barriers to model the observed behaviour. The current-voltage behaviour of the YSZ contact interfaces was only weakly non-linear, and could be described by 22{+-}1 barriers in series. Contact interfaces with sinterable contact layers were also investigated, and the measured contact resistance for these interfaces were more than 10 times less than for the other interfaces. (au)

  14. Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

    Science.gov (United States)

    Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

    2017-03-29

    A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

  15. Modelling of multicomponent diffusion in a two-phase oxide-metal corium pool by a diffuse interface method

    International Nuclear Information System (INIS)

    Cardon, Clement

    2016-01-01

    This Ph.D. topic is focused on the modelling of stratification kinetics for an oxide-metal corium pool (U-O-Zr-steel system) in terms of multicomponent and multiphase diffusion. This work is part of a larger research effort for the development of a detailed corium pool modelling based on a CFD approach for thermal hydraulics. The overall goal is to improve the understanding of the involved phenomena and obtain closure laws for integral macroscopic models. The phase-field method coupled with an energy functional using the CALPHAD method appears to be relevant for this purpose. In a first part, we have developed a diffuse interface model in order to describe the diffusion process in the U-O system. This model has been coupled with a CALPHAD thermodynamic database and its parameterization has been developed with, in particular, an up-scaling procedure related to the interface thickness. Then, within the framework of a modelling for the U-O-Zr ternary system, we have proposed a generalization of the diffuse interface model through an assumption of local equilibrium for redox mechanisms. A particular attention was paid to the model analysis by 1D numerical simulations with a special focus on the steady state composition profiles. Finally we have applied this model to the U-O-Zr-Fe system. For that purpose, we have considered a configuration close to small-scale experimental tests of oxide-metal corium pool stratification. (author) [fr

  16. A Study on N{sub 2}O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Doohyung; Park, Kunsik; Yoo, Seongwook; Kim, Sanggi; Lee, Jinhwan; Kim, Kwangsoo [Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea, Republic of)

    2017-08-15

    The effect of N{sub 2}O direct oxidation processes with re-oxidation on SiC/SiO{sub 2} interface characteristics has been investigated. With different oxidation and post oxidation annealing (POA) processes, the flat-band voltage, effective dielectric charge density, and interface trap density are obtained from the capacitance-voltage curves. For the proposed N{sub 2}O direct oxidation processes with re-oxidation, oxides were grown in N{sub 2}O ambient, diluted in high-purity N{sub 2} to 10% concentration, for 5 h at 1230 ℃. After the growth, some samples were annealed additionally at 1200 ℃ in O{sub 2} or H{sub 2}O for 20 min. N{sub 2}O direct oxidation with re-oxidation processes was confirmed that SiC/SiO{sub 2} interface properties and dielectric stability have better performance than with other conventional oxidation processes. This oxidation technique is expected to improve gate dielectric stability for application to SiC MOS devices; in particular, it can be used to obtain high-quality SiC/SiO{sub 2} interface properties.

  17. Interface modification of organic photovoltaics by combining molybdenum oxide (MoO{sub x}) and molecular template layer

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Haichao [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Yang, Junliang, E-mail: junliang.yang@csu.edu.cn [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Fu, Lin; Xiong, Jian; Yang, Bingchu; Ouyang, Jun; Zhou, Conghua; Huang, Han [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Gao, Yongli [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 (United States)

    2015-01-01

    We report discrete heterojunction small molecular organic photovoltaics (OPVs) with enhanced performance by modifying the interface using molybdenum oxide (MoO{sub x}) and molecular template layer perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride (PTCDA). A large increase in open-circuit voltage was obtained in copper phthalocyanine/fullerene, i.e., CuPc/C{sub 60} and CuPc/PCBM, discrete planar heterojunction photovoltaics with an insertion of 5 nm MoO{sub x} hole transport layer at the interface between the anode electrode and the CuPc donor layer. It results from the band bending at the interface and the pinning of the highest occupied molecular orbital level of CuPc to the Fermi level of MoO{sub x} due to the defect states (oxygen vacancies) in MoO{sub x} thin films. Moreover, the short-circuit current showed an efficient improvement by inserting a 1 nm PTCDA layer at the interface between the MoO{sub x} layer and the CuPc layer. The PTCDA layer induces the growth of CuPc thin film with lying-down molecular arrangement, supporting the charge transports along the vertical direction. The power conversion efficiencies of CuPc/C{sub 60} and CuPc/PCBM discrete planar heterojunction photovoltaic devices were improved from about 0.80% to 1.50% with inserting both MoO{sub x} and PTCDA layers. The results suggest that the performance of organic discrete planar heterojunction photovoltaics could be optimized by interface modification with combining hole transport layer and molecular template layer, which are potentially suitable for other highly efficient OPVs, such as small molecular tandem OPVs. - Highlights: • Organic small molecule photovoltaics were fabricated by interface modification. • An inserted molybdenum oxide layer largely enhances open-circuit voltage. • An inserted molecular template layer dramatically improves short-circuit current. • The power conversion efficiencies are almost doubled with interface modification.

  18. RGD Peptide-Grafted Graphene Oxide as a New Biomimetic Nano interface for Impedance-Monitoring Cell Behaviors

    International Nuclear Information System (INIS)

    Li, J.; Zheng, L.; Zeng, L.; Zhang, Y.; Jiang, L.; Song, J.; Li, J.; Zheng, L.; Song, J.; Li, J.; Zheng, L.; Song, J.

    2016-01-01

    A new biomimetic nano interface was constructed by facile grafting the bioactive arginylglycylaspartic acid (RGD) peptide on the graphene oxide (GO) surface through carbodiimide and N-hydroxysuccinimide coupling amidation reaction. The formed RGD-GO nano composites own unique two-dimensional structure and desirable electrochemical performance. The linked RGD peptides could improve GO∼s biocompatibility and support the adhesion and proliferation of human periodontal ligament fibroblasts (HPLFs) on RGD-GO biofilm surface. Furthermore the biologically active RGD-GO nano composites were demonstrated as a potential biomimetic nano interface for monitoring cell bio behaviors by electrochemical impedance spectroscopy (EIS). By analysis of the data obtained from equivalent circuit-fitting impedance spectroscopy, the information related to cell membrane capacitance, cell-cell gap resistance, and cell-electrode interface gap resistance in the process of cell adhesion and proliferation could be obtained. Besides, this proposed impedance-based cell sensor could be used to assess the inhibition effect of the lipopolysaccharide (LPS) on the HPLFs proliferation. Findings from this work suggested that RGD peptide functionalized GO nano materials may be not only applied in dental tissue engineering but also used as a sensor interface for electrochemical detection and analysis of cell behaviors in vitro.

  19. Oxide formation and precipitation behaviors on interface of F82H steel joints during HIPing and hot pressing

    International Nuclear Information System (INIS)

    Kishimoto, H.; Ono, T.; Sakasegawa, H.; Tanigawa, H.; Ando, M.; Shibayama, T.; Kohno, Y.; Kohyama, A.

    2013-01-01

    Joining technologies for F82H steels are important issues for the development of fusion energy. The hot isostatic pressing (HIP) method is appropriate for consolidating the first wall of the blanket because of the flexibility of the shape of HIPed products. The HIP method is planned for fabricating a complex-shaped first wall component with built-in cooling channels; thus, accumulation of studies of microstructural and mechanical property changes, especially lower toughness of the HIPed joints, is essential. Present research aims to reveal the microstructural evolution of F82H joints fabricated by the HIP method compared with joints fabricated by hot pressing, focusing on the formation of oxides on the interface. F82H joints were characterized using 1/3-scale Charpy V-notch impact test, transmission electron microscope, scanning electron microscope, and electron probe analysis to survey the microstructural characteristics of the interface

  20. Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.

    Science.gov (United States)

    Giustino, Feliciano; Umari, Paolo; Pasquarello, Alfredo

    2003-12-31

    Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies on length scales corresponding to first-neighbor distances, indicating that the dielectric transition is governed by the chemical grading. Silicon-induced gap states are shown to play a minor role.

  1. Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    2003-11-25

    A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.

  2. Effects of conducting oxide barrier layers on the stability of Crofer® 22 APU/Ca3Co4O9 interfaces

    DEFF Research Database (Denmark)

    Holgate, Tim C.; Han, Li; Wu, NingYu

    2014-01-01

    Practical implementation of oxide thermoelectrics on an industrial or commercial scale for waste heat energy conversion requires the development of chemically stable interfaces between metal interconnects and oxide thermoelements that exhibit low electrical contact resistances. A commercially...... available high-chrome iron alloy (i.e., Crofer® 22 APU) serving as the interconnect metal was spray coated with LaNi0.6Fe0.4O3 (LNFO) or (Mn,Co)3O4 spinel and then interfaced with a p-type thermoelectric material—calcium cobaltate (Ca3Co4O9)—using spark plasma sintering. The interfaces have been...

  3. Optical and electrical experiments at some transition-metal oxide foil-electrolyte interfaces

    International Nuclear Information System (INIS)

    Sari, S.O.; Ahlgren, W.L.

    1977-01-01

    Metal-oxide layers formed from transition-metal foils oxidized by heating in air have been examined for their photoelectrolytic response. The metals examined are Y, Ti, Zr, Hf, V, Nb, Ta, Mo, W, and Pt. Weak photoeffects are observed for oxide layers of all of these metals. Sizable light-dependent oxygen gas evolution rates are found in Ti and also in W oxides. The spectral dependence of the oxygen response in these compounds is investigated, and interpretation is given of these experiments

  4. Air tight electrical box

    Energy Technology Data Exchange (ETDEWEB)

    Pringle, C.G.

    1990-08-14

    An air-impervious electrical box to facilitate air sealing a house comprises an integral, rigid box body having a continuous flange, integral with the body, circumscribing and outwardly extending from the sides of the body. This flange is rearwardly positioned behind the front edges of the sides of the body a predetermined distance so that the electrical box may be secured to framing by nailing through the flange. Drywall is then secured to the frame on top of and adjecent to the flange. Such box eliminates the necessity for solid backing and minimizes passage of air through the box and space between the drywall and the box.

  5. Nanoscale Chemical and Valence Evolution at the Metal/Oxide Interface: A Case Study of Ti/SrTiO 3

    KAUST Repository

    Li, Yangyang

    2016-06-27

    Metal/oxide interfaces are ubiquitous in a wide range of applications such as electronics, photovoltaics, memories, catalysis, and sensors. However, there have been few investigations dedicated to the nanoscale structural and chemical characteristics of these buried interfaces. In this work, the metal/oxide interface between Ti and SrTiO3 (STO) is examined as a prototypical system using high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. An atomic-thin Ti2O3-like layer at the Ti/STO interface prepared at room temperature is discovered, and first-principles calculations predict a metallic band structure of this 2D electron system. As a universal feature of such interfaces prepared at different temperatures, near the interface nanoscale oxygen-deficient domains and continuous modulation of Ti oxidation states are found. Overall, these results directly reveal complex chemical and valence evolutions at the metal/oxide interfaces, providing microscopic insights on such heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  6. Sorption-induced reversible oxidation of Fe(2) at the smectite/water interface under strictly anoxic conditions. A Moessbauer spectroscopy study

    Energy Technology Data Exchange (ETDEWEB)

    Gehin, A.; Charlet, L. [Laboratoire de Geophysique Interne et Tectonophysique (LGIT), Universite de Grenoble, 38 - Grenoble (France); Gehin, A. [Agence Nationale pour la Gestion des Dechets Radioactifs, ANDRA, 92 - Chatenay Malabry (France); Greneche, J.M. [Laboratoire de Physique de l' Etat Condense, UMR-CNRS 6087, 72 - Le Mans (France); Brendle, J. [Universite de Haute Alsace, Lab. des Materiaux Mineraux (LMM), 68 - Mulhouse (France); Rancourt, D.G. [Ottawa Univ., Dept. of Physics, Ontario (Canada)

    2005-07-01

    Previous studies of Fe(II) sorption onto montmorillonite have been performed with the mineral extracted from the MX80 bentonite. These studies have shown that Fe(II) can be sorbed onto clay minerals in cation exchange position. The affinity of montmorillonite for Fe(II) and Ca(II) is identical. Fe(II) may also be specifically adsorbed onto montmorillonite clay edges. Moessbauer spectroscopy confirmed the high affinity of clay surfaces for Fe(II) sorption and showed that this sorption is mainly due to a two step mechanism: Fe(II) specific adsorption, followed by oxidation of the Fe(II) sorbed. The identification of the oxidizing agent was prohibited due to the complex chemistry of the natural MX80 montmorillonite. Thus, synthetic iron-free montmorillonite was used (chemical formula: Ca{sub 0.3} (A{sub 1.4}Mg{sub 0.6}) (Si{sub 4}) O{sub 10}(OH){sub 2} ). {sup 57}Fe(II) sorption experiments were conducted in a N{sub 2} atmosphere gloves-box, in strictly anoxic conditions. Solid samples were synthesized in order to confirm the clay high affinity for Fe(II), in absence of structural oxidant, and to have a better comprehension of the sorption mechanism. Moessbauer spectra were recorded for each sample. Whereas no Fe(III) is detected in solution as pH was increased and then, a significant amount of surface sorbed Fe(III) was found to be reversibly produced, which amounts for 0-3% of total Fe in the pre-sorption edge acid region, up to 7% of total Fe when all Fe is sorbed in the neutral to alkaline pH range. From pH {approx_equal} 2 to pH {approx_equal} 7, a sorption edge plateau is observed. In this plateau, the sorbed-Fe(III)/sorbed-Fe ratio increases with pH, up to 45% at pH 7. Moessbauer spectra comparison with ferrous hydroxide, synthesized in the same redox conditions at higher pH, show that this oxidation can not be due to the trace amounts Oz in the suspension. The Moessbauer spectra components of both Fe(II) and Fe(III) appears as paramagnetic doublets: iron has

  7. First-principles investigation of the effect of oxidation on the electronic structure and magnetic properties at the FeRh/MgO (0 0 1) interface

    Energy Technology Data Exchange (ETDEWEB)

    Sakhraoui, T., E-mail: tsakhrawi@yahoo.com [Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg (France); Said, M. [Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Alouani, M. [Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg (France)

    2017-06-15

    Highlights: • Density functional theory is used to study the interface between the FeRh alloy and MgO. • We focus on the effect of the oxidation on the electronic structure and magnetic properties of the FeRh/MgO (0 0 1) interface. • We show the change on the structure of the Fe-d states. • We examine the charge transfer and the local spin density modification after interface oxidation. - Abstract: The effect of interfacial oxidation on electronic structure and magnetic properties at the FeRh/MgO (0 0 1) interface is studied by ab initio methods. The results show the formation of an interfacial FeO-like layer between the FeRh and the MgO barrier, which has a direct impact on Fe e{sub g} states at the interface. It is shown that these e{sub g} states are more affected than that the t{sub 2g} states at the Fermi level due to the strong hybridization of these states with the p-states of oxygen. Thus, the oxidation modifies crucially the electronic structure and the magnetic properties as compared to those of an ideal interface. In particular, it was found that spin polarization of the ferromagnetic state is substantially enhanced. A simple two-current Julliere model shows that the TMR increases with oxidation.

  8. Presence, distribution, and diversity of iron-oxidizing bacteria at a landfill leachate-impacted groundwater surface water interface

    DEFF Research Database (Denmark)

    Yu, R.; Gan, P.; Mackay, A.A.

    2010-01-01

    ) were dominated by members of the Bradyrhizobiaceae and Comamonadaceae; clones from the deeper sediments were phylogenetically more diverse, dominated by members of the Rhodocyclaceae. The iron deposition profiles indicated that active iron oxidation occurred only within the near-to-surface GSI......We examined the presence of iron-oxidizing bacteria (IOB) at a groundwater surface water interface (GSI) impacted by reduced groundwater originating as leachate from an upgradient landfill. IOB enrichments and quantifications were obtained, at high vertical resolution, by an iron/oxygen opposing...... site mirrored the IOB distribution. Clone libraries from two separate IOB enrichments indicated a stratified IOB community with clear differences at short vertical distances. Alpha- and Betaproteobacteria were the dominant phylotypes. Clones from the near-surface sediment (1-2 cm below ground surface...

  9. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  10. Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

    Science.gov (United States)

    Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

    2017-04-01

    We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

  11. Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

    Science.gov (United States)

    Burton, J D; Tsymbal, E Y

    2011-04-15

    A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

  12. Scavenging of oxygen vacancies at modulation-doped oxide interfaces: Evidence from oxygen isotope tracing

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Döbeli, M.; Pomjakushina, E.

    2017-01-01

    , the mechanisms underlying the extreme mobility enhancement remain elusive. Herein, we used 18O isotope exchanged SrTi18O3 as substrates to create 2DEG at room temperature with and without the LSMO buffer layer. By mapping the oxygen profile across the interface between STO18 and disordered LaAlO3 or yttria...

  13. Integer Charge Transfer and Hybridization at an Organic Semiconductor/Conductive Oxide Interface

    KAUST Repository

    Gruenewald, Marco; Schirra, Laura K.; Winget, Paul; Kozlik, Michael; Ndione, Paul F.; Sigdel, Ajaya K.; Berry, Joseph J.; Forker, Roman; Bredas, Jean-Luc; Fritz, Torsten; Monti, Oliver L. A.

    2015-01-01

    with localized states (the shallow donors) in the substrate and charge back-donation, resulting in an effectively integer charge transfer across the interface. Charge transfer is thus not merely a question of locating the Fermi level above the PTCDA electron

  14. Ultrathin Limit of Exchange Bias Coupling at Oxide Multiferroic/Ferromagnetic Interfaces

    NARCIS (Netherlands)

    Huijben, Mark; Yu, P.; Martin, L.W.; Molegraaf, Hajo; Chu, Y.H.; Holcomb, M.B.; Balke, N.; Rijnders, Augustinus J.H.M.; Ramesh, R.

    2013-01-01

    Exchange bias coupling at the multiferroic- ferromagnetic interface in BiFeO3/La0.7Sr0.3MnO3 heterostructures exhibits a critical thickness for ultrathin BiFeO3 layers of 5 unit cells (2 nm). Linear dichroism measurements demonstrate the dependence on the BiFeO3 layer thickness with a strong

  15. Magnetism at the Interface of Magnetic Oxide and Nonmagnetic Semiconductor Quantum Dots.

    Science.gov (United States)

    Saha, Avijit; Viswanatha, Ranjani

    2017-03-28

    Engineering interfaces specifically in quantum dot (QD) heterostructures provide several prospects for developing multifunctional building block materials. Precise control over internal structure by chemical synthesis offers a combination of different properties in QDs and allows us to study their fundamental properties, depending on their structure. Herein, we studied the interface of magnetic/nonmagnetic Fe 3 O 4 /CdS QD heterostructures. In this work, we demonstrate the decrease in the size of the magnetic core due to annealing at high temperature by the decrease in saturation magnetization and blocking temperature. Furthermore, surprisingly, in a prominently optically active and magnetically inactive material such as CdS, we observe the presence of substantial exchange bias in spite of the nonmagnetic nature of CdS QDs. The presence of exchange bias was proven by the increase in magnetic anisotropy as well as the presence of exchange bias field (H E ) during the field-cooled magnetic measurements. This exchange coupling was eventually traced to the in situ formation of a thin antiferromagnetic FeS layer at the interface. This is verified by the study of Fe local structure using X-ray absorption fine structure spectroscopy, demonstrating the importance of interface engineering in QDs.

  16. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  17. Graphene Oxide Monolayer as a Compatibilizer at the Polymer-Polymer Interface for Stabilizing Polymer Bilayer Films against Dewetting.

    Science.gov (United States)

    Kim, Tae-Ho; Kim, Hyeri; Choi, Ki-In; Yoo, Jeseung; Seo, Young-Soo; Lee, Jeong-Soo; Koo, Jaseung

    2016-12-06

    We investigate the effect of adding graphene oxide (GO) sheets at the polymer-polymer interface on the dewetting dynamics and compatibility of immiscible polymer bilayer films. GO monolayers are deposited at the poly(methyl methacrylate) (PMMA)-polystyrene (PS) interface by the Langmuir-Schaefer technique. GO monolayers are found to significantly inhibit the dewetting behavior of both PMMA films (on PS substrates) and PS films (on PMMA substrates). This can be interpreted in terms of an interfacial interaction between the GO sheets and these polymers, which is evidenced by the reduced contact angle of the dewet droplets. The favorable interaction of GO with both PS and PMMA facilitates compatibilization of the immiscible polymer bilayer films, thereby stabilizing their bilayer films against dewetting. This compatibilization effect is verified by neutron reflectivity measurements, which reveal that the addition of GO monolayers broadens the interface between PS and the deuterated PMMA films by 2.2 times over that of the bilayer in the absence of GO.

  18. Semiconductor growth on an oxide using a metallic surfactant and interface studies for potential gate stacks from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Reyes Huamantinco, Andrei

    2008-05-09

    In this work the epitaxial growth of germanium on SrHfO{sub 3}(001), and the La{sub 2}Hf{sub 2}O{sub 7}/Si(001) and SrTiO{sub 3}/GaAs(001) interfaces were studied theoretically using the Projector-Augmented Wave (PAW) method. The PAW method is based on Density Functional Theory and it is implemented in the Car-Parrinello Ab-Initio Molecular Dynamics. The goal of the germanium growth on SrHfO{sub 3}(001) is to form a germanium film with low density of defects and smooth morphology, to be used as channel in a transistor. The feasibility of using a third material to achieve germanium layer-by-layer growth was investigated. The formation of an ordered strontium film on a SrO-terminated oxide substrate, to be used as template for germanium overgrowth, was studied. Deposition of germanium on the strontium 1ML template results in wetting and thus a change of the growth mode to layer-by-layer. The germanium surface is then passivated and a germanium compound is initially formed with strontium at the surface and interface. The interfacial structure and valence band offsets of the La{sub 2}Hf{sub 2}O{sub 7}/Si(001) crystalline system were studied. The SrTiO{sub 3}/GaAs(001) crystalline interfaces with unpinned Fermi level were investigated. (orig.)

  19. Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact

    International Nuclear Information System (INIS)

    Tong, S.W.; Lau, K.M.; Sun, H.Y.; Fung, M.K.; Lee, C.S.; Lifshitz, Y.; Lee, S.T.

    2006-01-01

    It has been demonstrated that hole-injection in organic light-emitting devices (OLEDs) can be enhanced by inserting a UV-illuminated fluorocarbon (CF x ) layer between indium-tin oxide (ITO) and organic hole-transporting layer (HTL). In this work, the process of interface formation and electronic properties of the ITO/CF x /HTL interface were investigated with ultraviolet photoelectron spectroscopy. It was found that UV-illuminated fluorocarbon layer decreases the hole-injection barrier from ITO to α-napthylphenylbiphenyl diamine (NPB). Energy level diagrams deduced from the ultraviolet photoelectron spectroscopy (UPS) spectra show that the hole-injection barrier in ITO/UV-treated CF x /NPB is the smallest (0.46 eV), compared to that in the ITO/untreated CF x /NPB (0.60 eV) and the standard ITO/NPB interface (0.68 eV). The improved current density-voltage (I-V) characteristics in the UV-treated CF x -coated ITO contact are consistent with its smallest barrier height

  20. Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

    International Nuclear Information System (INIS)

    Wadati, H.; Fujimori, A.

    2013-01-01

    Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

  1. CO oxidation on PtSn nanoparticle catalysts occurs at the interface of Pt and Sn oxide domains formed under reaction conditions

    KAUST Repository

    Michalak, William D.

    2014-04-01

    The barrier to CO oxidation on Pt catalysts is the strongly bound adsorbed CO, which inhibits O2 adsorption and hinders CO2 formation. Using reaction studies and in situ X-ray spectroscopy with colloidally prepared, monodisperse ∼2 nm Pt and PtSn nanoparticle catalysts, we show that the addition of Sn to Pt provides distinctly different reaction sites and a more efficient reaction mechanism for CO oxidation compared to pure Pt catalysts. To probe the influence of Sn, we intentionally poisoned the Pt component of the nanoparticle catalysts using a CO-rich atmosphere. With a reaction environment comprised of 100 Torr CO and 40 Torr O2 and a temperature range between 200 and 300 C, Pt and PtSn catalysts exhibited activation barriers for CO2 formation of 133 kJ/mol and 35 kJ/mol, respectively. While pure Sn is readily oxidized and is not active for CO oxidation, the addition of Sn to Pt provides an active site for O2 adsorption that is important when Pt is covered with CO. Sn oxide was identified as the active Sn species under reaction conditions by in situ ambient pressure X-ray photoelectron spectroscopy measurements. While chemical signatures of Pt and Sn indicated intermixed metallic components under reducing conditions, Pt and Sn were found to reversibly separate into isolated domains of Pt and oxidic Sn on the nanoparticle surface under reaction conditions of 100 mTorr CO and 40 mTorr O2 between temperatures of 200-275 C. Under these conditions, PtSn catalysts exhibited apparent reaction orders in O2 for CO 2 production that were 0.5 and lower with increasing partial pressures. These reaction orders contrast the first-order dependence in O 2 known for pure Pt. The differences in activation barriers, non-first-order dependence in O2, and the presence of a partially oxidized Sn indicate that the enhanced activity is due to a reaction mechanism that occurs at a Pt/Sn oxide interface present at the nanoparticle surface. © 2014 Published by Elsevier Inc.

  2. Integer Charge Transfer and Hybridization at an Organic Semiconductor/Conductive Oxide Interface

    KAUST Repository

    Gruenewald, Marco

    2015-02-11

    We investigate the prototypical hybrid interface formed between PTCDA and conductive n-doped ZnO films by means of complementary optical and electronic spectroscopic techniques. We demonstrate that shallow donors in the vicinity of the ZnO surface cause an integer charge transfer to PTCDA, which is clearly restricted to the first monolayer. By means of DFT calculations, we show that the experimental signatures of the anionic PTCDA species can be understood in terms of strong hybridization with localized states (the shallow donors) in the substrate and charge back-donation, resulting in an effectively integer charge transfer across the interface. Charge transfer is thus not merely a question of locating the Fermi level above the PTCDA electron-transport level but requires rather an atomistic understanding of the interfacial interactions. The study reveals that defect sites and dopants can have a significant influence on the specifics of interfacial coupling and thus on carrier injection or extraction.

  3. The Rashba spin-orbit coupling for superconductivity in oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Beyl, Stefan; Orth, Peter P.; Schmalian, Joerg [Institut fuer Theorie der Kondensierten Materie, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2014-07-01

    We investigate the role of the Rashba spin-orbit coupling on the superconducting order parameter and the phase stiffness at the interface of LaAlO{sub 3} and SrTiO{sub 3}. In particular, we analyze the gate controlled crossover between BCS superconductivity and Bose-Einstein condensation of Cooper pairs, amplified by the Rashba coupling and the possibility of a phase fluctuation induced quantum critical point.

  4. Traveling interface modulations and anisotropic front propagation in ammonia oxidation over Rh(110)

    Energy Technology Data Exchange (ETDEWEB)

    Rafti, Matías [Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas (INIFTA), Fac. Cs. Exactas, Universidad Nacional de La Plata, 64 y Diag. 113 (1900), La Plata (Argentina); Institut für Physikalische Chemie und Elektrochemie, Leibniz-Universität Hannover, Callinstr. 3-3a, D-30167 Hannover (Germany); Borkenhagen, Benjamin; Lilienkamp, Gerhard [Institut für Energieforschung und Physikalische Technologien, Technische Universität Clausthal, Leibnizstr. 4, 38678 Clausthal-Zellerfeld (Germany); Lovis, Florian; Smolinsky, Tim; Imbihl, Ronald, E-mail: imbihl@pci.uni-hannvover.de [Institut für Physikalische Chemie und Elektrochemie, Leibniz-Universität Hannover, Callinstr. 3-3a, D-30167 Hannover (Germany)

    2015-11-14

    The bistable NH{sub 3} + O{sub 2} reaction over a Rh(110) surface was explored in the pressure range 10{sup −6}–10{sup −3} mbar and in the temperature range 300–900 K using photoemission electron microscopy and low energy electron microscopy as spatially resolving methods. We observed a history dependent anisotropy in front propagation, traveling interface modulations, transitions with secondary reaction fronts, and stationary island structures.

  5. Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructures

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Kleibeuker, Josée E.

    2011-01-01

    AlO3, SrTiO3, and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8MnO3 films on SrTiO3 substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface...

  6. Hydrogen traps in the oxide/alloy interface region of Zr-Nb alloys

    International Nuclear Information System (INIS)

    Khatamian, D.

    1995-03-01

    In this study the 1 H( 15 N,αγ) 12 C nuclear reaction has been used to measure hydrogen profiles of anodically oxidized Zr-Nb specimens containing various amounts of niobium. The profiles have been correlated with oxygen profiles, obtained using a Scanning Auger Microprobe (SAM), and with X-ray diffraction patterns. In addition, unoxidized Zr-2.5Nb (Zr-2.5 wt% Nb) samples were implanted with oxygen and hydrogen to study the interaction between these two species when dissolved in the alloy. All the anodically oxidized specimens, except the pure Zr and the single-phase β-Zr (Zr-20Nb) samples, displayed hydrogen peaks beneath the oxide layer. These results, in conjunction with the results from the implanted specimens, indicate that the hydrogen moves under the influence of a stress gradient to the sub-oxide region, where the metal lattice has been expanded due to superficial oxide growth. The results show that dissolved oxygen sites in Zr-2.5Nb alloy do not trap hydrogen. (author). 16 refs., 6 figs

  7. Spacer for supporting fuel element boxes

    International Nuclear Information System (INIS)

    Wild, E.

    1979-01-01

    A spacer plate unit arranged externally on each side and at a predetermined level of a polygonal fuel element box for mutually supporting, with respect to one another, a plurality of the fuel element boxes forming a fuel element bundle, is formed of a first and a second spacer plate part each having the same length and the same width and being constituted of unlike first and second materials, respectively. The first and second spacer plate parts of the several spacer plate units situated at the predetermined level are arranged in an alternating continuous series when viewed in the peripheral direction of the fuel element box, so that any two spacer plate units belonging to face-to-face oriented sides of two adjoining fuel element boxes in the fuel element bundle define interfaces of unlike materials

  8. Enhanced electrocatalytic activity of reduced graphene oxide-Os nanoparticle hybrid films obtained at a liquid/liquid interface

    Science.gov (United States)

    Bramhaiah, K.; Pandey, Indu; Singh, Vidya N.; Kavitha, C.; John, Neena S.

    2018-03-01

    Hybrid films of reduced graphene oxide-osmium nanoparticles (rGO-Os NPs) synthesized at a liquid/liquid interface are explored for their electrocatalytic activity towards the oxidation of rhodamine B (RhB), a popular colourant found in textile industry effluents and a non-permitted food colour. The free-standing nature of the films enables them to be lifted directly on to electrodes without the aid of any binders. The films consist of aggregates of ultra-small Os NPs interspersed with rGO layers. The hybrid film exhibits enhanced RhB oxidation when compared to its constituents arising from the synergic effect between rGO and Os NPs, Os contributing to electrocatalysis and rGO contributing to high surface area and conductance as well as stabilization of Os nanoparticles. The electrochemical sensor based on rGO-Os NP hybrid film on pencil graphite electrode shows a remarkable performance for the quantitative detection of RhB with a linear variation in a wide range of concentrations, 4-1300 ppb (8.3 nM-2.71 μM). The modified electrode presents good stability over more than 6 months, reproducibility and anti-interference capability. The use of developed sensor for adequate detection of RhB in real samples such as food samples and pen markers is also demonstrated.

  9. Interface-modulated approach toward multilevel metal oxide nanotubes for lithium-ion batteries and oxygen reduction reaction

    Institute of Scientific and Technical Information of China (English)

    Jiashen Meng; Chaojiang Niu; Xiong Liu; Ziang Liu; Hongliang Chen; Xuanpeng Wang; Jiantao Li

    2016-01-01

    Metal oxide hollow structures with multilevel interiors are of great interest for potential applications such as catalysis,chemical sensing,drug delivery,and energy storage.However,the controlled synthesis of multilevel nanotubes remains a great challenge.Here we develop a facile interface-modulated approach toward the synthesis of complex metal oxide multilevel nanotubes with tunable interior structures through electrospinning followed by controlled heat treatment.This versatile strategy can be effectively applied to fabricate wire-in-tube and tubein-tube nanotubes of various metal oxides.These multilevel nanotubes possess a large specific surface area,fast mass transport,good strain accommodation,and high packing density,which are advantageous for lithium-ion batteries (LIBs)and the oxygen reduction reaction (ORR).Specifically,shrinkable CoMn2O4 tube-in-tube nanotubes as a lithium-ion battery anode deliver a high discharge capacity of ~565 mAh.g-1 at a high rate of 2 A.g-1,maintaining 89% of the latter after 500 cycles.Further,as an oxygen reduction reaction catalyst,these nanotubes also exhibit excellent stability with about 92% current retention after 30,000 s,which is higher than that of commercial Pt/C (81%).Therefore,this feasible method may push the rapid development of one-dimensional (1D) nanomaterials.These multifunctional nanotubes have great potential in many frontier fields.

  10. Characterization of the oleic acid/iron oxide nanoparticle interface by magnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Masur, S., E-mail: sabrina.masur@uni-due.de; Zingsem, B.; Marzi, T.; Meckenstock, R.; Farle, M.

    2016-10-01

    The synthesis of colloidal nanoparticles involves surfactant molecules, which bind to the particle surface and stabilize nanoparticles against aggregation. In many cases these protecting shells also can be used for further functionalization. In this study, we investigated monodisperse single crystalline iron oxide core/shell nanoparticles (Fe{sub x}O{sub y}-NPs) in situ covered with an oleic acid layer which showed two electron spin resonance (ESR) signals. The nanoparticles with the ligands attached were characterized by transmission electron microscopy (TEM) and ferro- and paramagnetic resonance (FMR, EPR). Infrared spectroscopy confirmed the presence of the functional groups and revealed that the oleic acid (OA) is chemisorbed as a carboxylate on the iron oxide and is coordinated symmetrically to the oxide atoms. We show that the EPR signal of the OA ligand molecule can be used as a local probe to determine the temperature changes at the surface of the nanoparticle. - Highlights: • Monodisperse single crystalline iron oxide core/shell nanoparticles (Fe{sub x}O{sub y}-NPs) in situ covered with an oleic acid layer two electron spin resonance (ESR) signals. • We show that the EPR signal of the OA ligand molecule can be used as a local probe to determine the temperature changes at the surface of the nanoparticle.

  11. Molecular control of photoexcited charge transfer and recombination at a quaterthiophene/zinc oxide interface

    International Nuclear Information System (INIS)

    Mou Weiwei; Nakano, Aiichiro; Ohmura, Satoshi; Shimojo, Fuyuki

    2012-01-01

    Nonadiabatic quantum molecular dynamics simulations are performed to study photoexcited charge transfer (CT) and charge recombination (CR) at an interface between a conjugated oligomer donor, quaterthiophene (QT), and an inorganic acceptor (ZnO). Simulations reveal a detrimental effect of static disorder in QT conformation on the efficiency of hybrid QT/ZnO solar cells due to increased CR. On the contrary, dynamic disorder (i.e., fluctuation of carbon-hydrogen bonds in QT) is essential for high efficiency by assisting CT. The separate controllability of CT and CR at the molecular level has impacts on molecular design for efficient solar cells and explains recent experimental observations.

  12. Characterisation of the Ni/ScYSZ interface in a model solid oxide fuel cell anode

    DEFF Research Database (Denmark)

    Schmidt, Michael Stenbæk; Hansen, Karin Vels; Norrman, Kion

    2008-01-01

    A nickel point electrode setup was used as a model of an SOFC anode on three slightly different electrolytes of zirconia stabilised by co-doping with scandia and yttria. The effect of electrolyte impurities on the electrode polarisation resistance was investigated by correlating electrochemical...... impedance spectroscopy data with time-of-flight secondary ion mass spectrometry, scanning electron microscopy and atomic force microscopy data. A semi-quantitative analysis of the electrolyte surfaces showed that the levels of surface impurities inside the electrode/electrolyte interface in close proximity...

  13. Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

    Science.gov (United States)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

    2017-02-01

    This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

  14. Detection of different oxidation states of individual manganese porphyrins during their reaction with oxygen at a solid/liquid interface.

    Science.gov (United States)

    den Boer, Duncan; Li, Min; Habets, Thomas; Iavicoli, Patrizia; Rowan, Alan E; Nolte, Roeland J M; Speller, Sylvia; Amabilino, David B; De Feyter, Steven; Elemans, Johannes A A W

    2013-07-01

    Manganese porphyrins have been extensively investigated as model systems for the natural enzyme cytochrome P450 and as synthetic oxidation catalysts. Here, we report single-molecule studies of the multistep reaction of manganese porphyrins with molecular oxygen at a solid/liquid interface, using a scanning tunnelling microscope (STM) under environmental control. The high lateral resolution of the STM, in combination with its sensitivity to subtle differences in the electronic properties of molecules, allowed the detection of at least four distinct reaction species. Real-space and real-time imaging of reaction dynamics enabled the observation of active sites, immobile on the experimental timescale. Conversions between the different species could be tuned by the composition of the atmosphere (argon, air or oxygen) and the surface bias voltage. By means of extensive comparison of the results to those obtained by analogous solution-based chemistry, we assigned the observed species to the starting compound, reaction intermediates and products.

  15. High Performance Nano-Crystalline Oxide Fuel Cell Materials. Defects, Structures, Interfaces, Transport, and Electrochemistry

    Energy Technology Data Exchange (ETDEWEB)

    Barnett, Scott [Northwestern Univ., Evanston, IL (United States); Poeppelmeier, Ken [Northwestern Univ., Evanston, IL (United States); Mason, Tom [Northwestern Univ., Evanston, IL (United States); Marks, Lawrence [Northwestern Univ., Evanston, IL (United States); Voorhees, Peter [Northwestern Univ., Evanston, IL (United States)

    2016-09-07

    This project addresses fundamental materials challenges in solid oxide electrochemical cells, devices that have a broad range of important energy applications. Although nano-scale mixed ionically and electronically conducting (MIEC) materials provide an important opportunity to improve performance and reduce device operating temperature, durability issues threaten to limit their utility and have remained largely unexplored. Our work has focused on both (1) understanding the fundamental processes related to oxygen transport and surface-vapor reactions in nano-scale MIEC materials, and (2) determining and understanding the key factors that control their long-term stability. Furthermore, materials stability has been explored under the “extreme” conditions encountered in many solid oxide cell applications, i.e, very high or very low effective oxygen pressures, and high current density.

  16. The InP - SiO2 interface: Electron tunneling into oxide traps

    International Nuclear Information System (INIS)

    Prasad, S.J.; Owen, S.J.T.

    1985-01-01

    Indium Phosphide is an attractive material for high-speed devices. Though many successful devices have been built and demonstrated, InP MISFET's still suffer from drain current drift. From the data current drift measurements, the shift in the threshold voltage ΔV was computed for different times. It was found that a linear relationship exists between √ΔV and log(t). When a positive bias-stress was applied to the gate of an MIS capacitor for a time t, the C-V cure shifted by an amount ΔV and again, a linear relationship was observed between √ΔV and log(t). This was verified on four different gate insulators: pyrolytic SiO 2 at 320 0 C and 360 0 C, plasma oxide at 300 0 C and photo CVD oxide at 225 0 C. These results can only be explained by a model in which electrons tunnel from the substrate into oxide traps

  17. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. H.; Freeland, J. W.; Hong, Hawoong, E-mail: hhong@aps.anl.gov [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Tung, I. C. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Chang, S.-H.; Bhattacharya, A.; Fong, D. D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2016-01-15

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  18. Nitrate Ion Photochemistry at Interfaces: A New Mechanism for Oxidation of alpha-Pinene

    International Nuclear Information System (INIS)

    Yu, Yong; Ezell, Michael J.; Zelenyuk, Alla N.; Imre, Dan G.; Alexander, M. Lizabeth; Ortega, John V.; Thomas, Jennie L.; Gogna, Karun; Tobias, Douglas J.; D'Anna, Barbara; Harmon, Chris W.; Johnson, Stan; Finlayson-Pitts, Barbara J.

    2008-01-01

    The photooxidation of 0.6-0.9 ppm α-pinene in the presence of a deliquesced thin film of NaNO3, and for comparison increasing concentrations of NO2, was studied in a 100 L Teflon(reg s ign) chamber at relative humidities from 70-88% and temperatures from 296-304 K. The loss of α-pinene and the formation of gaseous products were followed with time using proton transfer mass spectrometry. The yields of gas phase products were smaller in the NaNO3 experiments than in NO2 experiments. In addition, pinonic acid, pinic acid, trans-sobrerol and other unidentified products were detected in the extracts of the wall washings only for the NaNO3 photolysis. These data indicate enhanced loss of α-pinene at the NaNO3 thin film during photolysis. Supporting the experimental results are molecular dynamics simulations which predict that α-pinene has an affinity for the surface of the deliquesced nitrate thin film, enhancing the opportunity for oxidation of the impinging organic gas during the nitrate photolysis. This new mechanism of oxidation of organics may be partially responsible for the correlation between nitrate and the organic component of particles observed in many field studies, and may also contribute to the missing source of SOA needed to reconcile model predictions and field measurements. In addition, photolysis of nitrate on surfaces in the boundary layer may lead to oxidation of co-adsorbed organics

  19. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lee, J. H.; Freeland, J. W.; Hong, Hawoong; Tung, I. C.; Chang, S.-H.; Bhattacharya, A.; Fong, D. D.

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques

  20. Interface polymerization synthesis of conductive polymer/graphite oxide@sulfur composites for high-rate lithium-sulfur batteries

    International Nuclear Information System (INIS)

    Wang, Xiwen; Zhang, Zhian; Yan, Xiaolin; Qu, Yaohui; Lai, Yanqing; Li, Jie

    2015-01-01

    Highlights: • A hybrid nanostructure that incorporate the merits of conductive polymer nanorods and graphite oxide sheets. • A novel approach based on interface polymerization for synthesizing CP/GO@S ternary composite. • CP/GO@S ternary composite cathode shows enhanced electrochemical properties compared with CP@S binary composite cathode. • PEDOT/GO@S composite is the material system that have best electrochemical performance in all CP/GO@S ternary composites. - Abstract: The novel ternary composites, conductive polymers (CPs)/graphene oxide (GO)@sulfur composites were successfully synthesized via a facile one-pot route and used as cathode materials for Li-S batteries The poly(3,4-ethylenedioxythiophene) (PEDOT)/GO and polyaniline (PANI)/GO composites were prepared by interface polymerization of monomers on the surface of GO sheets. Then sulfur was in-situ deposited on the CPs/GO composites in same solution. The component and structure of the composites were characterized by XPS, TGA, FTIR, SEM, TEM and electrochemical measurements. In this structure, the CPs nanostructures are believed to serve as a conductive matrix and an adsorbing agent, while the highly conductive GO will physically and chemically confine the sulfur and polysulfide within cathode. The PEDOT/GO@S composites with the sulfur content of 66.2 wt% exhibit a reversible discharge capacity of 800.2 mAh g −1 after 200 cycles at 0.5 C, which is much higher than that of PANI/GO@S composites (599.1 mAh g −1 ) and PANI@S (407.2 mAh g −1 ). Even at a high rate of 4 C, the PEDOT/GO@S composites still retain a high specific capacity of 632.4 mAh g −1

  1. Effects of grain boundaries at the electrolyte/cathode interfaces on oxygen reduction reaction kinetics of solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Min Gi; Koo, Ja Yang; Ahn, Min Woo; Lee, Won Young [Dept. of Mechanical Engineering, Sungkyunkwan University, Suwon (Korea, Republic of)

    2017-04-15

    We systematically investigated the effects of grain boundaries (GBs) at the electrolyte/cathode interface of two conventional electrolyte materials, i.e., yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC). We deposited additional layers by pulsed laser deposition to control the GB density on top of the polycrystalline substrates, obtaining significant improvements in peak power density (two-fold for YSZ and three-fold for GDC). The enhanced performance at high GB density in the additional layer could be ascribed to the accumulation of oxygen vacancies, which are known to be more active sites for oxygen reduction reactions (ORR) than grain cores. GDC exhibited a higher enhancement than YSZ, due to the easier formation, and thus higher concentration, of oxygen vacancies for ORR. The strong relation between the concentration of oxygen vacancies and the surface exchange characteristics substantiated the role of GBs at electrolyte/cathode interfaces on ORR kinetics, providing new design parameters for highly performing solid oxide fuel cells.

  2. Nighttime oxidation of surfactants at the air-water interface: effects of chain length, head group and saturation

    Science.gov (United States)

    Sebastiani, Federica; Campbell, Richard A.; Rastogi, Kunal; Pfrang, Christian

    2018-03-01

    Reactions of the key atmospheric nighttime oxidant NO3 with organic monolayers at the air-water interface are used as proxies for the ageing of organic-coated aqueous aerosols. The surfactant molecules chosen for this study are oleic acid (OA), palmitoleic acid (POA), methyl oleate (MO) and stearic acid (SA) to investigate the effects of chain length, head group and degree of unsaturation on the reaction kinetics and products formed. Fully and partially deuterated surfactants were studied using neutron reflectometry (NR) to determine the reaction kinetics of organic monolayers with NO3 at the air-water interface for the first time. Kinetic modelling allowed us to determine the rate coefficients for the oxidation of OA, POA and MO monolayers to be (2.8±0.7) × 10-8, (2.4±0.5) × 10-8and (3.3±0.6) × 10-8 cm2 molecule-1 s-1 for fitted initial desorption lifetimes of NO3 at the closely packed organic monolayers, τd, NO3, 1, of 8.1±4.0, 16±4.0 and 8.1±3.0 ns, respectively. The approximately doubled desorption lifetime found in the best fit for POA compared to OA and MO is consistent with a more accessible double bond associated with the shorter alkyl chain of POA facilitating initial NO3 attack at the double bond in a closely packed monolayer. The corresponding uptake coefficients for OA, POA and MO were found to be (2.1±0.5) × 10-3, (1.7±0.3) × 10-3 and (2.1±0.4) × 10-3, respectively. For the much slower NO3-initiated oxidation of the saturated surfactant SA we estimated a loss rate of approximately (5±1) × 10-12 cm2 molecule-1 s-1, which we consider to be an upper limit for the reactive loss, and estimated an uptake coefficient of ca. (5±1) × 10-7. Our investigations demonstrate that NO3 will contribute substantially to the processing of unsaturated surfactants at the air-water interface during nighttime given its reactivity is ca. 2 orders of magnitude higher than that of O3. Furthermore, the relative contributions of NO3 and O3 to the oxidative

  3. Nighttime oxidation of surfactants at the air–water interface: effects of chain length, head group and saturation

    Directory of Open Access Journals (Sweden)

    F. Sebastiani

    2018-03-01

    Full Text Available Reactions of the key atmospheric nighttime oxidant NO3 with organic monolayers at the air–water interface are used as proxies for the ageing of organic-coated aqueous aerosols. The surfactant molecules chosen for this study are oleic acid (OA, palmitoleic acid (POA, methyl oleate (MO and stearic acid (SA to investigate the effects of chain length, head group and degree of unsaturation on the reaction kinetics and products formed. Fully and partially deuterated surfactants were studied using neutron reflectometry (NR to determine the reaction kinetics of organic monolayers with NO3 at the air–water interface for the first time. Kinetic modelling allowed us to determine the rate coefficients for the oxidation of OA, POA and MO monolayers to be (2.8±0.7 × 10−8, (2.4±0.5 × 10−8and (3.3±0.6 × 10−8 cm2 molecule−1 s−1 for fitted initial desorption lifetimes of NO3 at the closely packed organic monolayers, τd, NO3, 1, of 8.1±4.0, 16±4.0 and 8.1±3.0 ns, respectively. The approximately doubled desorption lifetime found in the best fit for POA compared to OA and MO is consistent with a more accessible double bond associated with the shorter alkyl chain of POA facilitating initial NO3 attack at the double bond in a closely packed monolayer. The corresponding uptake coefficients for OA, POA and MO were found to be (2.1±0.5 × 10−3, (1.7±0.3 × 10−3 and (2.1±0.4 × 10−3, respectively. For the much slower NO3-initiated oxidation of the saturated surfactant SA we estimated a loss rate of approximately (5±1 × 10−12 cm2 molecule−1 s−1, which we consider to be an upper limit for the reactive loss, and estimated an uptake coefficient of ca. (5±1 × 10−7. Our investigations demonstrate that NO3 will contribute substantially to the processing of unsaturated surfactants at the air–water interface during nighttime given its reactivity is ca. 2 orders of magnitude higher

  4. Infiltration and Selective Interactions at the Interface in Polymer-Oxide Hybrid Solar Cells

    Science.gov (United States)

    Ferragut, R.; Aghion, S.; Moia, F.; Binda, M.; Canesi, E. V.; Lanzani, G.; Petrozza, A.

    2013-06-01

    Positron annihilation spectroscopy was used to characterize polymer-based hybrid solar cells formed by poly(3-hexylthiophene) (P3HT) finely infiltrated in a porous TiO2 skeleton. A step-change improvement in the device performance is enabled by engineering the hybrid interface by the insertion of a proper molecular interlayer namely 4-mercaptopyridine (4-MP). In order to obtain depth-resolved data, positrons were implanted in the sample using a variable-energy positron beam. The characteristics of the partially filled nanoporous structures were evaluated in terms of the depth profile of the positronium yield and the S-parameter. A quantitative evaluation of the pore filling in the deep region is given from the analysis of Coincidence Doppler Broadening taken at fixed implantation energy. We note a remarkable difference in terms of the positronium yield when the 4-MP interlayer is introduced, which means a better covering of P3HT on the porous surface.

  5. Charge and field coupling phenomena at metal-oxide interfaces and their applications

    Science.gov (United States)

    Voora, Venkata M.

    Heterostructures composed of polar materials, such as ferroelectric and/or piezoelectric, are interesting due to their interface lattice charge coupling (LCC) effects. In this thesis, coupling effects between switchable ferroelectric and non-switchable piezoelectric semiconductor spontaneous polarizations are addressed. Also discussed is a dielectric continuum model approach for studying LCC effects in double layer piezoelectric semiconductor-ferroelectric and triple layer piezoelectric semiconductor-ferroelectric-piezoelectric semiconductor heterostructures. The dielectric continuum model augments the effects of electric field driven switchable polarization due to LCC with depletion layer formation in semiconductor heterostructures. Electrical investigations were used to study a reference single layer (BaTiO3), a double layer (BaTiO3-ZnO), and a triple layer (ZnO-BaTiO 3-ZnO) heterostructure grown by pulsed laser deposition. The coupling between the non-switchable spontaneous polarization of ZnO and the electrically switchable spontaneous polarization of BaTiO3 causes strong asymmetric polarization hysteresis behavior. The n-type ZnO layer within double and triple layered heterostructures reveals hysteresis-dependent capacitance variations upon formation of depletion layers at the ZnO/BaTiO 3 interfaces. Model analysis show very good agreement between the generated data and the experimental results. The dielectric continuum model approach allows for the derivation of the amount and orientation of the spontaneous polarization of the piezoelectric constituents, and can be generalized towards multiple layer piezoelectric semiconductor-ferroelectric heterostructures. Based on experimental results the polarization coupled ZnO-BaTiO 3-ZnO heterostructures is identified as a two-terminal unipolar ferroelectric bi-junction transistor which can be utilized in memory storage devices. Furthermore it is discussed, that the triple layer heterostructure with magnetically

  6. The Study of the Oxide Coating Effect on Bone-Implant Interface Formation by Means of Electron Microscopy Method with Energy Dispersive X-ray Analysis

    International Nuclear Information System (INIS)

    Gudakova, A.A.; Danilchenko, S.N.; Sukhodub, L.F.; Luk'yanchenko, V.V.; Zykova, A.V.; Safonov, V.I.

    2006-01-01

    The experimental results of the measurement of the tissue constituent elements distribution, as well as impurity elements in the tissues around a Ti-implant with protective TiO 2 oxide coating are presented. Study of morphology, qualitative and quantitative analysis were carried out by means of scanning electron microscopy method with energy dispersive X-ray analysis. The results show weak migration of Ti into the bone tissue near the interface and protective role of the oxide coatings

  7. Origin of Colossal Ionic Conductivity in Oxide Multilayers: Interface Induced Sublattice Disorder

    International Nuclear Information System (INIS)

    Pennycook, Timothy J.; Pantelides, Sokrates T.; Beck, Matthew J.; Varga, Kalman; Varela, Maria; Pennycook, Stephen J.

    2010-01-01

    Oxide ionic conductors typically operate at high temperatures, which limits their usefulness. Colossal room-temperature ionic conductivity was recently discovered in multilayers of yttria-stabilized zirconia (YSZ) and SrTiO 3 . Here we report density-functional calculations that trace the origin of the effect to a combination of lattice-mismatch strain and O-sublattice incompatibility. Strain alone in bulk YSZ enhances O mobility at high temperatures by inducing extreme O disorder. In multilayer structures, O-sublattice incompatibility causes the same extreme disorder at room temperature.

  8. Characterization of silicon-oxide interfaces and organic monolayers by IR-UV ellipsometry and FTIR spectroscopy

    Science.gov (United States)

    Hess, P.; Patzner, P.; Osipov, A. V.; Hu, Z. G.; Lingenfelser, D.; Prunici, P.; Schmohl, A.

    2006-08-01

    VUV-laser-induced oxidation of Si(111)-(1×1):H, Si(100):H, and a-Si:H at 157 nm (F II laser) in pure O II and pure H IIO atmospheres was studied between 30°C and 250°C. The oxidation process was monitored in real time by spectroscopic ellipsometry (NIR-UV) and FTIR spectroscopy. The ellipsometric measurements could be simulated with a three-layer model, providing detailed information on the variation of the suboxide interface with the nature of the silicon substrate surface. Besides the silicon-dioxide and suboxide layer, a dense, disordered, roughly monolayer thick silicon layer was included, as found previously by molecular dynamics calculations. The deviations from the classical Deal-Grove mechanism and the self-limited growth of the ultrathin dioxide layers (TMS) groups and n-alkylthiol monolayers on gold-coated silicon. The C-H stretching vibrations of the methylene and methyl groups could be identified by FTIR spectroscopy and IR ellipsometry.

  9. Electronic structure evolution and energy level alignment at C60/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces

    Science.gov (United States)

    Liu, Xiaoliang; Yi, Shijuan; Wang, Chenggong; Wang, Congcong; Gao, Yongli

    2014-04-01

    The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C60)/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine] (TAPC)/ molybdenum oxide (MoOx)/ indium tin oxide with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. With deposition of TAPC upon MoOx, a dipole of 1.58 eV was formed at the TAPC/MoOx interface due to electron transfer from TAPC to MoOx. The highest occupied molecular orbital (HOMO) onset of TAPC was pinned closed to the Fermi level, leading to a p-doped region and thus increasing the carrier concentration at the very interface. The downward band bending and the resulting built-in field in TAPC were favorable for the hole transfer toward the TAPC/MoOx interface. The rigid downward shift of energy levels of TAPC indicated no significant interface chemistry at the interface. With subsequent deposition of C60 on TAPC, a dipole of 0.27 eV was observed at the C60/TAPC heterojunction due to the electron transfer from TAPC to C60. This led to a drop of the HOMO of TAPC near the C60/TAPC interface, and hence further enhanced the band bending in TAPC. The band bending behavior was also observed in C60, similarly creating a built-in field in C60 film and improving the electron transfer away from the C60/TAPC interface. It can be deduced from the interface analysis that a promising maximum open circuit voltage of 1.5 eV is achievable in C60/TAPC-based organic photovoltaic cells.

  10. Shaping 3-D boxes

    DEFF Research Database (Denmark)

    Stenholt, Rasmus; Madsen, Claus B.

    2011-01-01

    Enabling users to shape 3-D boxes in immersive virtual environments is a non-trivial problem. In this paper, a new family of techniques for creating rectangular boxes of arbitrary position, orientation, and size is presented and evaluated. These new techniques are based solely on position data...

  11. Math in the Box

    Science.gov (United States)

    DeYoung, Mary J.

    2009-01-01

    This article describes how to make an origami paper box and explores the algebra, geometry, and other mathematics that unfolds. A set of origami steps that transforms the paper into an open box can hold mathematical surprises for both students and teachers. An origami lesson can engage students in an open-ended exploration of the relationship…

  12. ALUMINUM BOX BUNDLING PRESS

    Directory of Open Access Journals (Sweden)

    Iosif DUMITRESCU

    2015-05-01

    Full Text Available In municipal solid waste, aluminum is the main nonferrous metal, approximately 80- 85% of the total nonferrous metals. The income per ton gained from aluminum recuperation is 20 times higher than from glass, steel boxes or paper recuperation. The object of this paper is the design of a 300 kN press for aluminum box bundling.

  13. Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

    DEFF Research Database (Denmark)

    Bjorlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci

    2018-01-01

    A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demo...

  14. Oxidation of monolayers of partly converted dimethoxy-substituted poly(p-phenylenevinylene) precursor polymers at the air-water interface

    NARCIS (Netherlands)

    Hagting, J.G.; Schouten, A.J.; Hagting, A

    2000-01-01

    We observed that the poly(p-phenylenevinylene) units in Langmuir monolayers of partly converted dimethoxy-substituted poly(p-phenylenevinylene) precursor polymers oxidize at the air-water interface. This reaction even happened in the dark and therefore can not be attributed to a photooxygenation

  15. Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations

    Science.gov (United States)

    Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

    2017-02-01

    Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

  16. Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations.

    Science.gov (United States)

    Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

    2017-02-06

    Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

  17. Formation of an interface layer in thermionic oxide cathodes for CRT applications

    International Nuclear Information System (INIS)

    Hashim, A A; Barratt, D S; Ray, A K; Hassan, A K

    2004-01-01

    Scanning electron microscopic techniques were employed to study the surface morphological changes of oxide cathodes and nickel caps as a result of cathode activation extending over periods of 1-12 h. Elemental analysis of barium, strontium, tungsten, magnesium and aluminium was performed using energy dispersion x-ray spectroscopy. An abrupt change was observed after activation longer than 3 h. Conduction through well activated cathode assemblies was found to be due to intergranular electron tunnelling at low temperatures (T ≤ 500 K), while trapping and detrapping at grain boundaries becomes the dominant mechanism at high temperatures (T ≥ 500 K). The contribution of the interfacial layer to conductivity was found to be significant for cathodes activated for smaller periods

  18. Rapid dehalogenation of pesticides and organics at the interface of reduced graphene oxide-silver nanocomposite.

    Science.gov (United States)

    Koushik, Dibyashree; Sen Gupta, Soujit; Maliyekkal, Shihabudheen M; Pradeep, T

    2016-05-05

    This paper reports dehalogenation of various organohalides, especially aliphatic halocarbons and pesticides at reduced graphene oxide-silver nanocomposite (RGO@Ag). Several pesticides as well as chlorinated and fluorinated alkyl halides were chosen for this purpose. The composite and the products of degradation were characterized thoroughly by means of various microscopic and spectroscopic techniques. A sequential two-step mechanism involving dehalogenation of the target pollutants by silver nanoparticles followed by adsorption of the degraded compounds onto RGO was revealed. The composite showed unusual adsorption capacity, as high as 1534 mg/g, which facilitated the complete removal of the pollutants. Irrespective of the pollutants tested, a pseudo-second-order rate equation best described the adsorption kinetics. The affinity of the composite manifested chemical differences. The high adsorption capacity and re-usability makes the composite an excellent substrate for purification of water. Copyright © 2016 Elsevier B.V. All rights reserved.

  19. Surface studies of YBa2Cu3O7-x -matching oxide substrates and interfaces

    International Nuclear Information System (INIS)

    Enevold Thaulov Andersen, J.

    1990-11-01

    Crystallographic changes as a result of heat-treatment at 700-900 deg. C are found for SrTiO 3 (100), MgO(100) and LaAlO 3 (100). The p(2x2) reconstruction of the SrTiO 3 (100) and the superstructures on MgO(100) and on LaAlO 3 (100) thus observed are suggested to be induced by segregation of impurities to the surface. The surface charge-effects which disturb electron- and photon-impact experiments with these insulators are removed by heat-treatments. Deposition of copper results in formation of copper islands on SrTiO 3 (100) and on LaAlO 3 (100). Yttrium forms islands on LaAlO 3 (100) and grows in a layer-by-layer mode on SrTiO 3 (100) and on MgO(100). An yttrium 1x1 epitaxy is observed on the MgO(100) surface, which is suggested to be an YO superstructure. Oxidation of the 1x1 Y/MgO(100) systems diminishes the charge-effects and improves all diffraction and spectroscopic measurements. This may be due to the formation of metallic states around the Fermi level when the film is oxidized. An in situ synthesized YBa 2 Cu 3 O 7 thin film on SrTiO 3 (100) compared to a thick epitaxial YBa 2 Cu 3 O 7-x (001) film on MgO(100) reveals differences in surface electronic structures but not in surface stoichiometries. (au) 18 refs

  20. Characterization of the interface between an Fe–Cr alloy and the p-type thermoelectric oxide Ca3Co4O9

    DEFF Research Database (Denmark)

    Holgate, Tim; Han, Li; Wu, NingYu

    2014-01-01

    A customized Fe–Cr alloy that has been optimized for high temperature applications in oxidizing atmospheres has been interfaced via spark plasma sintering (SPS) with a p-type thermoelectric oxide material: calcium cobaltate (Ca3Co4O9). The properties of the alloy have been analyzed for its...... calcium and chromium in the interface that is highly resistive at room temperature, but conducting at the intended thermoelectric device hot-side operating temperature of 800 °C. As the alloy is well matched in terms of its thermal expansion and highly conducting compared to the Ca3Co4O9, it may...... be further considered as an interconnect material candidate at least with application on the hot-side of an oxide thermoelectric power generation module....

  1. Pea p68, a DEAD-box helicase, provides salinity stress tolerance in transgenic tobacco by reducing oxidative stress and improving photosynthesis machinery.

    Science.gov (United States)

    Tuteja, Narendra; Banu, Mst Sufara Akhter; Huda, Kazi Md Kamrul; Gill, Sarvajeet Singh; Jain, Parul; Pham, Xuan Hoi; Tuteja, Renu

    2014-01-01

    The DEAD-box helicases are required mostly in all aspects of RNA and DNA metabolism and they play a significant role in various abiotic stresses, including salinity. The p68 is an important member of the DEAD-box proteins family and, in animal system, it is involved in RNA metabolism including pre-RNA processing and splicing. In plant system, it has not been well characterized. Here we report the cloning and characterization of p68 from pea (Pisum sativum) and its novel function in salinity stress tolerance in plant. The pea p68 protein self-interacts and is localized in the cytosol as well as the surrounding of cell nucleus. The transcript of pea p68 is upregulated in response to high salinity stress in pea. Overexpression of p68 driven by constitutive cauliflower mosaic virus-35S promoter in tobacco transgenic plants confers enhanced tolerances to salinity stress by improving the growth, photosynthesis and antioxidant machinery. Under stress treatment, pea p68 overexpressing tobacco accumulated higher K+ and lower Na+ level than the wild-type plants. Reactive oxygen species (ROS) accumulation was remarkably regulated by the overexpression of pea p68 under salinity stress conditions, as shown from TBARS content, electrolyte leakage, hydrogen peroxide accumulation and 8-OHdG content and antioxidant enzyme activities. To the best of our knowledge this is the first direct report, which provides the novel function of pea p68 helicase in salinity stress tolerance. The results suggest that p68 can also be exploited for engineering abiotic stress tolerance in crop plants of economic importance.

  2. Pea p68, a DEAD-box helicase, provides salinity stress tolerance in transgenic tobacco by reducing oxidative stress and improving photosynthesis machinery.

    Directory of Open Access Journals (Sweden)

    Narendra Tuteja

    Full Text Available The DEAD-box helicases are required mostly in all aspects of RNA and DNA metabolism and they play a significant role in various abiotic stresses, including salinity. The p68 is an important member of the DEAD-box proteins family and, in animal system, it is involved in RNA metabolism including pre-RNA processing and splicing. In plant system, it has not been well characterized. Here we report the cloning and characterization of p68 from pea (Pisum sativum and its novel function in salinity stress tolerance in plant.The pea p68 protein self-interacts and is localized in the cytosol as well as the surrounding of cell nucleus. The transcript of pea p68 is upregulated in response to high salinity stress in pea. Overexpression of p68 driven by constitutive cauliflower mosaic virus-35S promoter in tobacco transgenic plants confers enhanced tolerances to salinity stress by improving the growth, photosynthesis and antioxidant machinery. Under stress treatment, pea p68 overexpressing tobacco accumulated higher K+ and lower Na+ level than the wild-type plants. Reactive oxygen species (ROS accumulation was remarkably regulated by the overexpression of pea p68 under salinity stress conditions, as shown from TBARS content, electrolyte leakage, hydrogen peroxide accumulation and 8-OHdG content and antioxidant enzyme activities.To the best of our knowledge this is the first direct report, which provides the novel function of pea p68 helicase in salinity stress tolerance. The results suggest that p68 can also be exploited for engineering abiotic stress tolerance in crop plants of economic importance.

  3. Degradation of cellulose at the wet-dry interface. II. Study of oxidation reactions and effect of antioxidants.

    Science.gov (United States)

    Jeong, Myung-Joon; Dupont, Anne-Laurence; de la Rie, E René

    2014-01-30

    To better understand the degradation of cellulose upon the formation of a tideline at the wet-dry interface when paper is suspended in water, the production of chemical species involved in oxidation reactions was studied. The quantitation of hydroperoxides and hydroxyl radicals was carried out in reverse phase chromatography using triphenylphosphine and terephthalic acid, respectively, as chemical probes. Both reactive oxygen species were found in the tideline immediately after its formation, in the range of micromoles and nanomoles per gram of paper, respectively. The results indicate that hydroxyl radicals form for the most part in paper before the tideline experiment, whereas hydroperoxides appear to be produced primarily during tideline formation. Iron sulfate impregnation of the paper raised the production of hydroperoxides. After hygrothermal aging in sealed vials the hydroxyl radical content in paper increased significantly. When aged together in the same vial, tideline samples strongly influenced the degradation of samples from other areas of the paper (multi-sample aging). Different types of antioxidants were added to the paper before the tideline experiment to investigate their effect on the oxidation reactions taking place. In samples treated with iron sulfate or artificially aged, the addition of Irgafos 168 (tris(2,4-ditert-butylphenyl) phosphate) and Tinuvin 292 (bis(1,2,2,6,6-pentamethyl-4-piperidyl) sebacate and methyl 1,2,2,6,6-pentamethyl-4-piperidyl sebacate) reduced the concentration of hydroperoxides and hydroxyl radicals, respectively. Tinuvin 292 was also found to considerably lower the rate of cellulose chain scission reactions during hygrothermal aging of the paper. Copyright © 2013 Elsevier Ltd. All rights reserved.

  4. Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2 interface under γ-irradiation: effect of preliminary ion implantation

    International Nuclear Information System (INIS)

    Naumova, O V; Fomin, B I; Ilnitsky, M A; Popov, V P

    2012-01-01

    In this study, we examined the effect of preliminary boron or phosphorous implantation on charge accumulation in the buried oxide of SOI-MOSFETs irradiated with γ-rays in the total dose range (D) of 10 5 –5 × 10 7 rad. The buried oxide was obtained by high-temperature thermal oxidation of Si, and it was not subjected to any implantation during the fabrication process of SOI structures. It was found that implantation with boron or phosphorous ions, used in fabrication technologies of SOI-MOSFETs, increases the concentration of precursor traps in the buried oxide of SOI structures. Unlike in the case of boron implantation, phosphorous implantation leads to an increased density of states at the Si/buried SiO 2 interface during subsequent γ-irradiation. In the γ-irradiated SOI-MOSFETs, the accumulated charge density and the density of surface states in the Si/buried oxide layer systems both vary in proportion to k i ln D. The coefficients k i for as-fabricated and ion-implanted Si/buried SiO 2 systems were evaluated. From the data obtained, it was concluded that a low density of precursor hole traps was a factor limiting the positive charge accumulation in the buried oxide of as-fabricated (non-implanted) SOI structures with the bonded Si/buried SiO 2 interface. (paper)

  5. Perspective: A controversial benchmark system for water-oxide interfaces: H2O/TiO2(110)

    Science.gov (United States)

    Diebold, Ulrike

    2017-07-01

    The interaction of water with the single-crystalline rutile TiO2(110) surface has been the object of intense investigations with both experimental and computational methods. Not only is TiO2(110) widely considered the prototypical oxide surface, its interaction with water is also important in many applications where this material is used. At first, experimental measurements were hampered by the fact that preparation recipes for well-controlled surfaces had yet to be developed, but clear experimental evidence that water dissociation at defects including oxygen vacancies and steps emerged. For a perfect TiO2(110) surface, however, an intense debate has evolved whether or not water adsorbs as an intact molecule or if it dissociates by donating a proton to a so-called bridge-bonded surface oxygen atom. Computational studies agree that the energy difference between these two states is very small and thus depends sensitively on the computational setup and on the approximations used in density functional theory (DFT). While a recent molecular beam/STM experiment [Z.-T. Wang et al., Proc. Natl. Acad. Sci. U. S. A. 114(8), 1801-1805 (2017)] gives conclusive evidence for a slight preference (0.035 eV) for molecular water and a small activation energy of (0.36 eV) for dissociation, understanding the interface between liquid water and TiO2(110) arises as the next controversial frontier.

  6. Pion in a box

    International Nuclear Information System (INIS)

    Bietenholz, W.; Rakow, P.E.L.; Schierholz, G.; Regensburg Univ.

    2010-02-01

    The residual mass of the pion in a finite spatial box at vanishing quark masses is computed with two flavors of dynamical clover fermions. The result is compared with predictions of chiral perturbation theory in the δ regime. (orig.)

  7. Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

    International Nuclear Information System (INIS)

    Brillson, L. J.; Young, A. P.; White, B. D.; Schaefer, J.; Niimi, H.; Lee, Y. M.; Lucovsky, G.

    2000-01-01

    Low-energy electron-excited nanoluminescence spectroscopy reveals depth-resolved optical emission associated with traps near the interface between ultrathin SiO 2 deposited by plasma-enhanced chemical vapor deposition on plasma-oxidized crystalline Si. These near-interface states exhibit a strong dependence on local chemical bonding changes introduced by thermal/gas processing, layer-specific nitridation, or depth-dependent radiation exposure. The depth-dependent results provide a means to test chemical and structural bond models used to develop advanced dielectric-semiconductor junctions. (c) 2000 American Vacuum Society

  8. Nanostructure-Directed Chemical Sensing: The IHSAB Principle and the Effect of Nitrogen and Sulfur Functionalization on Metal Oxide Decorated Interface Response

    Directory of Open Access Journals (Sweden)

    James L. Gole

    2013-08-01

    Full Text Available The response matrix, as metal oxide nanostructure decorated n-type semiconductor interfaces are modified in situ through direct amination and through treatment with organic sulfides and thiols, is demonstrated. Nanostructured TiO2, SnOx, NiO and CuxO (x = 1,2, in order of decreasing Lewis acidity, are deposited to a porous silicon interface to direct a dominant electron transduction process for reversible chemical sensing in the absence of significant chemical bond formation. The metal oxide sensing sites can be modified to decrease their Lewis acidity in a process appearing to substitute nitrogen or sulfur, providing a weak interaction to form the oxynitrides and oxysulfides. Treatment with triethylamine and diethyl sulfide decreases the Lewis acidity of the metal oxide sites. Treatment with acidic ethane thiol modifies the sensor response in an opposite sense, suggesting that there are thiol (SH groups present on the surface that provide a Brønsted acidity to the surface. The in situ modification of the metal oxides deposited to the interface changes the reversible interaction with the analytes, NH3 and NO. The observed change for either the more basic oxynitrides or oxysulfides or the apparent Brønsted acid sites produced from the interaction of the thiols do not represent a simple increase in surface basicity or acidity, but appear to involve a change in molecular electronic structure, which is well explained using the recently developed inverse hard and soft acids and bases (IHSAB model.

  9. Infectious disease and boxing.

    Science.gov (United States)

    King, Osric S

    2009-10-01

    There are no unique boxing diseases but certain factors contributing to the spread of illnesses apply strongly to the boxer, coach, and the training facility. This article examines the nature of the sport of boxing and its surrounding environment, and the likelihood of spread of infection through airborne, contact, or blood-borne routes of transmission. Evidence from other sports such as running, wrestling, and martial arts is included to help elucidate the pathophysiologic elements that could be identified in boxers.

  10. [Boxing: traumatology and prevention].

    Science.gov (United States)

    Cabanis, Emmanuel-Alain; Iba-Zizen, Marie-Thérèse; Perez, Georges; Senegas, Xavier; Furgoni, Julien; Pineau, Jean-Claude; Louquet, Jean-Louis; Henrion, Roger

    2010-10-01

    In 1986, a surgeon who, as an amateur boxer himself was concerned with boxers' health, approached a pioneering Parisian neuroimaging unit. Thus began a study in close cooperation with the French Boxing Federation, spanning 25 years. In a first series of 52 volunteer boxers (13 amateurs and 39 professionals), during which MRI gradually replaced computed tomography, ten risk factors were identified, which notably included boxing style: only one of 40 "stylists" with a good boxing technique had cortical atrophy (4.5 %), compared to 15 % of "sloggers". Changes to the French Boxing Federation rules placed the accent on medical prevention. The second series, of 247 boxers (81 amateurs and 266 professionals), showed a clear improvement, as lesions were suspected in 14 individuals, of which only 4 (1.35 %) were probably due to boxing. The third and fourth series were part of a protocol called "Brain-Boxing-Ageing", which included 76 boxers (11 having suffered KOs) and 120 MRI scans, with reproducible CT and MRI acquisitions (9 sequences with 1.5 T then 3 T, and CT). MRI anomalies secondary to boxing were found in 11 % of amateurs and 38 % of professionals (atrophy, high vascular T2 signal areas, 2 cases of post-KO subdural bleeding). CT revealed sinus damage in 13 % of the amateurs and 19 % of the professionals. The risk of acute and chronic facial and brain damage was underline, along with detailed precautionary measures (organization of bouts, role of the referee and ringside doctor, and application of French Boxing Federation rules).

  11. Nonneurologic emergencies in boxing.

    Science.gov (United States)

    Coletta, Domenic F

    2009-10-01

    Professional boxing has done an admirable job in promoting safety standards in its particular sport. However, injuries occur during the normal course of competition and, unfortunately, an occasional life-threatening emergency may arise. Although most common medical emergencies in boxing are injuries from closed head trauma, in this article those infrequent but potentially catastrophic nonneurologic conditions are reviewed along with some less serious emergencies that the physician must be prepared to address.

  12. Investigation of the Alkaline Electrochemical Interface and Development of Composite Metal/Metal-Oxides for Hydrogen and Oxygen Electrodes

    Science.gov (United States)

    Bates, Michael

    electrolyte. The HER kinetics of numerous binary & ternary Ni-alloys and composite Ni/metal-oxide/C samples were evaluated in aqueous 0.1 M KOH electrolyte. Furthermore a model of the double layer interface is proposed, which helps explain the observed ensemble effect in the presence of AEI. In Chapter 3, Ni-Fe and Ni-Fe-Co mixed-metal-oxide (MMO) films were investigated for oxygen evolution reaction (OER) activity in 0.1M KOH on high surface area Raney-Nickel supports. During investigations of MMO activity, aniline was identified as a useful "capping agent" for synthesis of high-surface area MMO-polyaniline (PANI) composite materials. A Ni-Fe-Co/PANI-Raney-Ni catalyst was developed which exhibits enhanced mass-activity compared to state-of-the-art Ni-Fe OER electrocatalysts reported to date. The morphology of the MMO catalyst film on PANI/Raney-Ni support provides excellent dispersion of active-sites and should maintain high active-site utilization for catalyst loading on gas-diffusion electrodes. In Chapter 4, the de-activation of reversible-hydrogen electrode catalysts was investigated and the development of a Pt-Ir-Nx/C catalyst is reported, which exhibits significantly increased stability in the HBr/Br 2 electrolyte. In contrast a Pt-Ir/C catalyst exhibited increased tolerance to high-voltage cycling and in particular showed recovery of electrocatalytic activity after reversible de-activation (presumably from bromide adsorption and subsequent oxidative bromide stripping). Under the harshest testing conditions of high-voltage cycling or exposure to Br2 the Pt-based catalyst showed a trend in stability: Pt < Pt-Ir < Pt-Ir-Nx. (Abstract shortened by UMI.).

  13. Electronic structure of the indium tin oxide/nanocrystalline anatase (TiO2)/ruthenium-dye interfaces in dye-sensitized solar cells

    Science.gov (United States)

    Lyon, J. E.; Rayan, M. K.; Beerbom, M. M.; Schlaf, R.

    2008-10-01

    The electronic structure of two interfaces commonly found in dye-sensitized photovoltaic cells based on nanocrystalline anatase TiO2 ("Grätzel cells") was investigated using photoemission spectroscopy (PES). X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS) measurements were carried out on the indium tin oxide (ITO)/TiO2 and the TiO2/cis-bis(isothiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)-ruthenium(II)bis-tetrabutylammonium dye ("N719" or "Ruthenium 535-bisTBA") interfaces. Both contacts were investigated using a multistep deposition procedure where the entire structure was prepared in vacuum using electrospray deposition. In between deposition steps the surface was characterized with XPS and UPS resulting in a series of spectra, allowing the determination of the orbital and band lineup at the interfaces. The results of these efforts confirm previous PES measurements on TiO2/dye contacts prepared under ambient conditions, suggesting that ambient contamination might not have significant influence on the electronic structure at the dye/TiO2 interface. The results also demonstrate that there may be a significant barrier for electron injection at the sputtered ITO/TiO2 interface and that this interface should be viewed as a semiconductor heterojunction rather than as metal-semiconductor (Schottky) contact.

  14. Effect of Trimethylamine N-Oxide on Interfacial Electrostatics at Phospholipid Monolayer-Water Interfaces and Its Relevance to Cardiovascular Disease.

    Science.gov (United States)

    Mondal, Jahur A

    2016-05-05

    Trimethylamine N-oxide (TMAO), a metabolite of choline containing dietary nutrients which are abundant in red meat, egg, and other animal foods, increases the risk of cardiovascular disease (e.g., atherosclerosis) by boosted accumulation of fatty deposits on artery wall. Hence, for the molecular level elucidation of the pathogenesis of atherosclerosis, it is important to understand the effect of TMAO at the endothelial cell membrane-blood interface (artery wall). Heterodyne-detected vibrational sum frequency generation (HD-VSFG) study of a zwitterionic phosphatidylcholine (PC) lipid monolayer-water interface (mimic of endothelial membrane-blood interface) shows that the interfacial water becomes increasingly H-up oriented in the presence of TMAO in the aqueous phase, revealing a dramatic change in the interfacial electrostatics. Examinations of charged lipid interfaces show that TMAO screens anionic phosphate less effectively than cationic choline, which confirms that TMAO increases the relative influence of the anionic phosphate by preferential screening of the cationic choline at the zwitterionic PC lipid interface where the phosphate and choline groups are simultaneously present. Together, it is conceivable that at an elevated TMAO level in serum would modify the electrostatics at the endothelial cell membrane-blood interface (artery wall), which may affect the influx/efflux of fatty deposits on artery wall, setting the stage for atherosclerosis.

  15. Continuous Reduced Graphene Oxide Film Prepared by Stitching of Nanosheets at the Interface of Two Immiscible Solutions

    International Nuclear Information System (INIS)

    Sohn, Young Ku; Kim, Seog K.; Min, Bong Ki

    2011-01-01

    RGO sheets dispersed in water are prepared by chemical reduction of GO using ascorbic acid. By mixing and sonication of submicron-size RGO sheets in two immiscible liquids (e. g., chloroform and water) for the first time we have prepared a continuous large-area RGO film at the interface. In other words, we have shown that aggregated RGO sheets could be fully stretched at the interface to form a continuous film. The RGO film has been characterized by SEM, TEM, UV-vis absorption, XPS and Raman. The film exhibits high flexibility, transparency, and very long-term stability without forming aggregations. Without requiring vapor deposition, a special instrument, or a filtration followed by a removing the filter paper one could easily achieve a continuous RGO-film in any laboratories. Our solution-based method is much simpler and cost-effective, and very good for large scale mass production. This finding could boost real applications of graphene in laboratory and industry, and provide a new methodology for the fabrication of large-area continuous graphene films. Graphene, an atom-thick two-dimensional (2D) honeycomb lattice sheet of sp 2 -bonded carbon atoms, has recently been emerged as a new promising material in various fields. Because of its gigantic charge carrier mobility it could be applied to field-effect transistors as a substitute of silicon. Due to its transparency and high electrical conductivity, it could be used as a substitute of ITO electrode in solar cells and light-emitting diodes. Other superior properties include large surface area, flexibility, strength, stiffness, and thermal conductivity. These provides wide applications of graphene including supercapa-citor, battery, sensor, storage and drug delivery. For real applications, large-scale of graphene sheets or films needs to be prepared. Large-area (orders of centimeters) graphene films have recently been fabricated using a chemical vapor deposition (CVD) method on various metal substrates. This

  16. Probing electronic and vibrational properties at the electrochemical interface using SFG spectroscopy: Methanol electro-oxidation on Pt(1 1 0)

    Science.gov (United States)

    Vidal, F.; Busson, B.; Tadjeddine, A.

    2005-02-01

    We report the study of methanol electro-oxidation on Pt(1 1 0) using infrared-visible sum-frequency generation (SFG) vibrational spectroscopy. The use of this technique enables to probe the vibrational and electronic properties of the interface simultaneously in situ. We have investigated the vibrational properties of the interface in the CO ads internal stretch spectral region (1700-2150 cm -1) over a wide range of potentials. The analysis of the evolution of the C-O stretch line shape, which is related to the interference between the vibrational and electronic parts of the non-linear response, with the potential allows us to show that the onset of bulk methanol oxidation corresponds to the transition from a negatively to a positively charged surface.

  17. Effect of Nb2O5 doping on improving the thermo-mechanical stability of sealing interfaces for solid oxide fuel cells.

    Science.gov (United States)

    Zhang, Qi; Du, Xinhang; Tan, Shengwei; Tang, Dian; Chen, Kongfa; Zhang, Teng

    2017-07-13

    Nb 2 O 5 is added to a borosilicate sealing system to improve the thermo-mechanical stability of the sealing interface between the glass and Fe-Cr metallic interconnect (Crofer 22APU) in solid oxide fuel cells (SOFCs). The thermo-mechanical stability of the glass/metal interface is evaluated experimentally as well as by using a finite element analysis (FEA) method. The sealing glass doped with 4 mol.% Nb 2 O 5 shows the best thermo-mechanical stability, and the sealing couple of Crofer 22APU/glass/GDC (Gd 0.2 Ce 0.8 O 1.9 ) remains intact after 50 thermal cycles. In addition, all sealing couples show good joining after being held at 750 °C for 1000 h. Moreover, the possible mechanism on the thermo-mechanical stability of sealing interface is investigated in terms of stress-based and energy-based perspectives.

  18. Phenomenological theory of current-producing processes at the solid oxide electrolyte/gas electrode interface: steady-state polarization of fuel-cell electrodes

    International Nuclear Information System (INIS)

    Murygin, I.V.; Chebotin, V.N.

    1979-01-01

    The polarization of fuel-cell electrodes (mixtures CO + CO 2 and H 2 + H 2 O) in systems with solid oxide electrolytes is discussed. The theory is based upon a process model where the electrode reaction zone can spread along the line of three-phase contact by diffusion of reaction partners and products across the electrolyte/electrode and electrolyte/gas interface

  19. The BOXES Methodology Black Box Dynamic Control

    CERN Document Server

    Russell, David W

    2012-01-01

    Robust control mechanisms customarily require knowledge of the system’s describing equations which may be of the high order differential type.  In order to produce these equations, mathematical models can often be derived and correlated with measured dynamic behavior.  There are two flaws in this approach one is the level of inexactness introduced by linearizations and the other when no model is apparent.  Several years ago a new genre of control systems came to light that are much less dependent on differential models such as fuzzy logic and genetic algorithms. Both of these soft computing solutions require quite considerable a priori system knowledge to create a control scheme and sometimes complicated training program before they can be implemented in a real world dynamic system. Michie and Chambers’ BOXES methodology created a black box system that was designed to control a mechanically unstable system with very little a priori system knowledge, linearization or approximation.  All the method need...

  20. Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S.; Dhole, S.D.; Kanjilal, D.; Bhoraskar, V.N. E-mail: vnb@physics.unipune.ernet.in

    1999-07-02

    n-channel depletion MOS devices were irradiated with 50 and 80 MeV phosphorous ions, with different fluences varying in the range from 10{sup 11} to 10{sup 13} ions/cm{sup 2}. The pre and post irradiation I-V characteristics were measured and the corresponding threshold shift {delta}V{sub TH} was estimated. In both the cases, the drain current I{sub D} and the threshold voltage V{sub TH} were found to decrease with the ion fluence. The increase in the threshold voltage shift {delta}V{sub TH} with the ion fluence, was greater for the devices irradiated with 80 MeV ions than those irradiated with 50 MeV ions. The interface and oxide state densities were determined through the subthreshold voltage measurements. To separate the contributions of oxide and interface states towards the threshold voltage shift, the ion irradiated MOS devices were annealed at 150 deg. C. The threshold shift during annealing initially decreased and later increased with increasing annealing period. The rate of change of the interface states during annealing was higher than that of the oxide states. It was also found that depletion mode (normally ON) MOSFETs switched operation to enhancement mode (normally OFF)

  1. Eye trauma in boxing.

    Science.gov (United States)

    Corrales, Gustavo; Curreri, Anthony

    2009-10-01

    In boxing, along with a few other sports, trauma is inherent to the nature of the sport; therefore it is considered a high-risk sport for ocular injuries. The long-term morbidity of ocular injuries suffered by boxers is difficult to estimate due to the lack of structured long-term follow-up of these athletes. Complications of blunt ocular trauma may develop years after the athlete has retired from the ring and is no longer considered to be at risk for boxing-related injuries. This article describes the wide range of eye injuries a boxer can sustain, and their immediate and long-term clinical management.

  2. Opto-Box

    CERN Document Server

    Bertsche, David; The ATLAS collaboration; Welch, Steven; Smith, Dale Shane; Che, Siinn; Gan, K.K.; Boyd, George Russell Jr

    2015-01-01

    The opto-box is a custom mini-crate for housing optical modules, which process and transfer optoelectronic data. The system tightly integrates electrical, mechanical, and thermal functionality into a small package of size 35x10x8 cm^3. Special attention was given to ensure proper shielding, grounding, cooling, high reliability, and environmental tolerance. The custom modules, which incorporate Application Specific Integrated Circuits (ASICs), were developed through a cycle of rigorous testing and redesign. In total, fourteen opto-boxes have been installed and loaded with modules on the ATLAS detector. They are currently in operation as part of the LHC run 2 data read-out chain.

  3. Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

    Science.gov (United States)

    Padilha, A. C. M.; McKenna, K. P.

    2018-04-01

    Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

  4. Teaching with Box Tops.

    Science.gov (United States)

    Raiser, Lynne; D'Zamko, Mary Elizabeth

    1984-01-01

    Using environmental materials (such as the phone book and placemats from fast food restaurants) can be a motivating way to teach learning disabled students skills and concepts, as shown in an approach to reading, math, science and nutrition, and social studies instruction using a JELL-O brand gelatin box. (CL)

  5. Glove box posting system

    International Nuclear Information System (INIS)

    McIntosh, A.E.

    1981-01-01

    A system for posting objects into closed containers, such as glove boxes, is described in which the bag used, preferably made of plastic, does not have to be fitted and sealed by the operator during each posting operation. (U.K.)

  6. Mystery Box Marvels

    Science.gov (United States)

    Santos, Joel; Centurio, Tina

    2012-01-01

    What happens in the first week of school could very well set the stage for the rest of the school year. Setting high standards for science activities based in inquiry can start on the first day of science class and develop as the year unfolds. With the use of simple, readily available, inexpensive materials, an efficient mystery box lesson can be…

  7. Ocular complications of boxing

    Science.gov (United States)

    Bianco, M; Vaiano, A; Colella, F; Coccimiglio, F; Moscetti, M; Palmieri, V; Focosi, F; Zeppilli, P; Vinger, P

    2005-01-01

    Objectives: To investigate the prevalence of ocular injuries in a large population of boxers over a period of 16 years, in particular, the most severe lesions that may be vision threatening. Methods: Clinical records of the medical archive of the Italian Boxing Federation were analysed. A total of 1032 boxers were examined from February 1982 to October 1998. A complete ophthalmological history was available for 956, who formed the study population (a total of 10 697 examinations). The following data were collected: age when started boxing; duration of competitive boxing career (from the date of the first bout); weight category; a thorough ocular history. The following investigations were carried out: measurement of visual acuity and visual fields, anterior segment inspection, applanation tonometry, gonioscopy, and examination of ocular fundus. Eighty age matched healthy subjects, who had never boxed, formed the control group. Results: Of the 956 boxers examined, 428 were amateur (44.8%) and 528 professional (55.2%). The median age at first examination was 23.1 (4.3) years (range 15–36). The prevalence of conjunctival, corneal, lenticular, vitreal, ocular papilla, and retinal alterations in the study population was 40.9% compared with 3.1% in the control group (p⩽0.0001). The prevalence of serious ocular findings (angle, lens, macula, and peripheral retina alterations) was 5.6% in boxers and 3.1% in controls (NS). Conclusions: Boxing does not result in a higher prevalence of severe ocular lesions than in the general population. However, the prevalence of milder lesions (in particular with regard to the conjunctiva and cornea) is noteworthy, justifying the need for adequate ophthalmological surveillance. PMID:15665199

  8. Polymeric ionic liquid modified graphene oxide-grafted silica for solid-phase extraction to analyze the excretion-dynamics of flavonoids in urine by Box-Behnken statistical design.

    Science.gov (United States)

    Hou, Xiudan; Liu, Shujuan; Zhou, Panpan; Li, Jin; Liu, Xia; Wang, Licheng; Guo, Yong

    2016-07-22

    A solid-phase extraction method for the efficient analysis of the excretion-dynamics of flavonoids in urine was established and described. In this work, in situ surface radical chain-transfer polymerization and in situ anion exchange were utilized to tune the extraction performance of poly(1-vinyl-3-hexylimidazolium bromide)-graphene oxide-grafted silica (poly(VHIm(+)Br(-))@GO@Sil). Graphene oxide (GO) was first coated onto the silica using a layer-by-layer fabrication method, and then the anion of poly(VHIm(+)Br(-))@GO@Sil was changed into hexafluorophosphate (PF6(-)) by in situ anion exchange. The interaction energies between two PILs and four flavonoids were calculated with the Gaussian09 suite of programs. A Box-Behnken design was used for the optimization of four greatly influential parameters after single-factor experiments to obtain more accurate and precise results. Coupled to high performance liquid chromatography, the poly(VHIm(+)PF6(-))@GO@Sil method showed acceptable extraction recoveries for the four flavonoids, with limits of detection in the range of 0.1-0.5μgL(-1), and wide linear ranges with correlation coefficients (R) ranging from 0.9935 to 0.9987. Under the optimum conditions, the proposed method was applied to analyze the urines collected from a healthy volunteer. The excretion amount-time profiles revealed that 4-15h was the main excretion time for the detected flavonoids. The results indicated that the newly developed method offered the advantages of being feasible, green and cost-effective, and could be successfully applied to the extraction and enrichment of flavonoids in human body systems allowing the study of the metabolic kinetics. Copyright © 2016. Published by Elsevier B.V.

  9. Dry boxes and inert atmosphere techniques

    International Nuclear Information System (INIS)

    Bartak, D.E.

    1987-01-01

    Practitioners need to conduct experiments with molten salts in an inert atmosphere owing to the chemical reactivity of these media. Most fused salt solvent systems show reactivity to water and/or oxygen, which results in significant chemical changes in the properties of these solvents. Although several studies on the nature of an oxygen/oxide electrode in this melt have been reported, the reactions have not been fully understood because of apparent water contamination in many cases. Nitrate melt systems are also hygroscopic; for example, the LiNO 3 -KNO 3 eutectic (177 0 C) absorbs water to at least 0.2% by weight. The result is that the electrochemistry of heavier, electropositive metal ions has been significantly altered. In addition, trace amounts of water have been shown to significantly affect the oxygen-oxide redox chemistry in NaNO 3 -KNO 3 melts (250 0 C). The haloaluminates, which include AlCl 3 -NaCl (175 0 C), as well as AlCl 3 -organic salt binaries are particularly sensitive to the presence of both oxygen and moisture. Oxygen is a strong oxidant in the fused hydroxide systems with formation of superoxide ion from either oxide or water. This chapter describes general, inert atmosphere techniques which can be used by the molten salt experimentalist. Because of the limitations of volatility, vacuum manipulations are not considered. Rather, the use of glove boxes, glove bags, and inert bench-top techniques are discussed. The areas covered are: glove box and bag equipment, operation and maintenance of glove boxes and glove bags, and common operations conducted inside glove boxes

  10. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  11. Self-assembling of poly(ε-caprolactone)-b-poly(ethylene oxide) diblock copolymers in aqueous solution and at the silica-water interface

    International Nuclear Information System (INIS)

    Leyh, B.; Vangeyte, P.; Heinrich, M.; Auvray, L.; De Clercq, C.; Jerome, R.

    2004-01-01

    Small-angle neutron scattering is used to investigate the self-assembling behaviour of poly(ε-caprolactone)-b-poly(ethylene oxide) diblock copolymers with various block lengths (i) in aqueous solution, (ii) in aqueous solution with the addition of sodium dodecyl sulphate (SDS) and (iii) at the silica-water interface. Micelles are observed under our experimental conditions due to the very small critical micellar concentration of these copolymers (0.01 g/l). The poly(ε-caprolactone) core is surrounded by a poly(ethylene oxide) corona. The micellar form factors have been measured at low copolymer concentrations (0.2 wt%) under selected contrast matching conditions. The data have been fitted to various analytical models to extract the micellar core and corona sizes. SDS is shown to induce partial micelle disruption together with an increase of the poly(ethylene oxide) corona extension from 25% (without SDS) to 70% (with SDS) of a completely extended PEO 114 chain. Our data at the silica-water interface are compatible with the adsorption of micelles

  12. Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy.

    Science.gov (United States)

    Flynn, Brendan T; Oleksak, Richard P; Thevuthasan, Suntharampillai; Herman, Gregory S

    2018-01-31

    A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In 3+ to In 0 , that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O 2 pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.

  13. Decommissioning a small glove box

    International Nuclear Information System (INIS)

    Bond, R.D.; McSherry, K.

    1985-11-01

    An account is given of dismantling a fuel fabrication glove box using simple tooling. The fissile content of the box was first measured by several non-destructive techniques. After cleaning, the box was dismantled using hand tools and finally packed for disposal. A record of operator radiation doses, the time taken for each stage of the operation and packing information is given. (author)

  14. Thermal oxidation induced degradation of carbon fiber reinforced composites and carbon nanotube sheet enhanced fiber/matrix interface for high temperature aerospace structural applications

    Science.gov (United States)

    Haque, Mohammad Hamidul

    Recent increase in the use of carbon fiber reinforced polymer matrix composite, especially for high temperature applications in aerospace primary and secondary structures along with wind energy and automotive industries, have generated new challenges to predict its failure mechanisms and service life. This dissertation reports the experimental study of a unidirectional carbon fiber reinforced bismaleimide (BMI) composites (CFRC), an excellent candidate for high temperature aerospace components, undergoing thermal oxidation at 260 °C in air for over 3000 hours. The key focus of the work is to investigate the mechanical properties of the carbon fiber BMI composite subjected to thermal aging in three key aspects - first, studying its bulk flexural properties (in macro scale), second, characterizing the crack propagation along the fiber direction, representing the interfacial bonding strength between fiber and matrix (in micro scale), and third, introducing nano-structured materials to modify the interface (in nano scale) between the carbon fiber and BMI resin and mechanical characterization to study its influence on mitigating the aging effect. Under the first category, weight loss and flexural properties have been monitored as the oxidation propagates through the fiber/matrix interface. Dynamic mechanical analysis and micro-computed tomography analysis have been performed to analyze the aging effects. In the second category, the long-term effects of thermal oxidation on the delamination (between the composite plies) and debonding (between fiber and matrix) type fracture toughness have been characterized by preparing two distinct types of double cantilever beam specimens. Digital image correlation has been used to determine the deformation field and strain distribution around the crack propagation path. Finally the resin system and the fiber/matrix interface have been modified using nanomaterials to mitigate the degradations caused by oxidation. Nanoclay modified

  15. Opto-Box

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00377159; The ATLAS collaboration

    2016-01-01

    The opto-box is a custom mini-crate for housing optical modules, which process and transfer optoelectronic data. Many novel solutions were developed for the custom design and manufacturing. The system tightly integrates electrical, mechanical, and thermal functionality into a small package of size 35x10x8 cm$^{3}$. Special attention was given to ensure proper shielding, grounding, cooling, high reliability, and environmental tolerance. The custom modules, which incorporate Application Specific Integrated Circuits (ASICs), were developed through a cycle of rigorous testing and redesign. In total, fourteen opto-boxes have been installed and loaded with modules on the ATLAS detector. They are currently in operation as part of the LHC run 2 data read-out chain.

  16. Boxed Permutation Pattern Matching

    DEFF Research Database (Denmark)

    Amit, Mika; Bille, Philip; Cording, Patrick Hagge

    2016-01-01

    the goal is to only find the boxed subsequences of T that are order-isomorphic to P. This problem was introduced by Bruner and Lackner who showed that it can be solved in O(n3) time. Cho et al. [CPM 2015] gave an O(n2m) time algorithm and improved it to O(n2 logm). In this paper we present a solution...

  17. The Box Method

    DEFF Research Database (Denmark)

    Nielsen, Peter Vilhelm

    The velocity level in a room ventilated by jet ventilation is strongly influenced by the supply conditions. The momentum flow in the supply jets controls the air movement in the room and, therefore, it is very important that the inlet conditions and the numerical method can generate a satisfactor...... description of this momentum flow. The Box Method is a practical method for the description of an Air Terminal Device which will save grid points and ensure the right level of the momentum flow....

  18. Solar Anomalous and Magnetospheric Particle Explorer attitude control electronics box design and performance

    Science.gov (United States)

    Chamberlin, K.; Clagett, C.; Correll, T.; Gruner, T.; Quinn, T.; Shiflett, L.; Schnurr, R.; Wennersten, M.; Frederick, M.; Fox, S. M.

    1993-01-01

    The attitude Control Electronics (ACE) Box is the center of the Attitude Control Subsystem (ACS) for the Solar Anomalous and Magnetospheric Particle Explorer (SAMPEX) satellite. This unit is the single point interface for all of the Attitude Control Subsystem (ACS) related sensors and actuators. Commands and telemetry between the SAMPEX flight computer and the ACE Box are routed via a MIL-STD-1773 bus interface, through the use of an 80C85 processor. The ACE Box consists of the flowing electronic elements: power supply, momentum wheel driver, electromagnet driver, coarse sun sensor interface, digital sun sensor interface, magnetometer interface, and satellite computer interface. In addition, the ACE Box also contains an independent Safehold electronics package capable of keeping the satellite pitch axis pointing towards the sun. The ACE Box has dimensions of 24 x 31 x 8 cm, a mass of 4.3 kg, and an average power consumption of 10.5 W. This set of electronics was completely designed, developed, integrated, and tested by personnel at NASA GSFC. SAMPEX was launched on July 3, 1992, and the initial attitude acquisition was successfully accomplished via the analog Safehold electronics in the ACE Box. This acquisition scenario removed the excess body rates via magnetic control and precessed the satellite pitch axis to within 10 deg of the sun line. The performance of the SAMPEX ACS in general and the ACE Box in particular has been quite satisfactory.

  19. Protein and lipid oxidation affect the viscoelasticity of whey protein layers at the oil-water interface

    NARCIS (Netherlands)

    Berton-Carabin, Claire C.; Schroder, Anja; Rovalino-Cordova, Ana; Schroën, Karin; Sagis, Leonard

    2016-01-01

    Protein and lipid oxidation are prevailing issues that negatively affect the nutritional and sensory quality of food emulsions. It is probable that such oxidative modifications affect the functional properties of proteins, and in particular their ability to form densely packed, interconnected

  20. Trimethylamine N-oxide (TMAO) and tert-butyl alcohol (TBA) at hydrophobic interfaces: insights from molecular dynamics simulations.

    Science.gov (United States)

    Fiore, Andrew; Venkateshwaran, Vasudevan; Garde, Shekhar

    2013-06-25

    TMAO, a potent osmolyte, and TBA, a denaturant, have similar molecular architecture but somewhat different chemistry. We employ extensive molecular dynamics simulations to quantify their behavior at vapor-water and octane-water interfaces. We show that interfacial structure-density and orientation-and their dependence on solution concentration are markedly different for the two molecules. TMAO molecules are moderately surface active and adopt orientations with their N-O vector approximately parallel to the aqueous interface. That is, not all methyl groups of TMAO at the interface point away from the water phase. In contrast, TBA molecules act as molecular amphiphiles, are highly surface active, and, at low concentrations, adopt orientations with their methyl groups pointing away and the C-O vector pointing directly into water. The behavior of TMAO at aqueous interfaces is only weakly dependent on its solution concentration, whereas that of TBA depends strongly on concentration. We show that this concentration dependence arises from their different hydrogen bonding capabilities-TMAO can only accept hydrogen bonds from water, whereas TBA can accept (donate) hydrogen bonds from (to) water or other TBA molecules. The ability to self-associate, particularly visible in TBA molecules in the interfacial layer, allows them to sample a broad range of orientations at higher concentrations. In light of the role of TMAO and TBA in biomolecular stability, our results provide a reference with which to compare their behavior near biological interfaces. Also, given the ubiquity of aqueous interfaces in biology, chemistry, and technology, our results may be useful in the design of interfacially active small molecules with the aim to control their orientations and interactions.

  1. Effect of electrode and interface oxide on the property of ReRAM composed of Pr0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Kaji, H; Kondo, H; Fujii, T; Arita, M; Takahashi, Y

    2010-01-01

    The current-voltage (I-V) characteristics of resistance random access memories (ReRAM) composed of the [top electrode] /Pr 0.7 Ca 0.3 MnO 3 (PCMO)/Pt structure were investigated by using Au, Pt, Ag, Cr, Mo and W needles as top electrodes against the PCMO layer. Reproducible resistance switching can be recognized in devices using Cr, Mo and W. Devices using Mo and W electrode showed two type of characteristics: (A) resistance change from low resistance state to high resistance state by positive bias voltage and (B) vice versa. Since the surfaces of these needles may be oxidized, we took account of the effect by the surface oxide. To check this assumption, we annealed the W needles and Mo needles in air and investigated I-V characteristics without the PCMO layer. As a result, the characteristic-(B) was classified to be induced by a surface oxide. Meanwhile, the characteristic-(A) is from PCMO. The existence of the interface oxide between top electrode and PCMO seems to decide the type of characteristics and to influence the reproducibility of the ReRAM property.

  2. Outside the box

    International Nuclear Information System (INIS)

    Pichon, Max

    2011-01-01

    Full text: Queensland-based Hydrasyst wants to take its motto of 'Do more with less' into the greywater sector with a new water recycling and energy recovery technology launched in November, called The Grey Box. The company is initially targeting large industrial laundries as they are major generators of greywater and heavy energy users, but it has ambitions well beyond that. The average commercial laundry consumes 1-5ML of water a week, using about 16 litres for every 1kg of clothing washed. Hydrasyst director Stephen Balemi said The Grey Box can slash the volume by 80 per cent. While he was reluctant to disclose too much technical detail, he claimed it is the only technology serving the $1 billion a year laundry sector that combines microfiltration / ultrafiltration membrane technology and energy reduction components. The heart of the system is a ceramic hollow fibre membrane. Balemi said it produces higher filtrate quality than competitors, meaning the recycled water can be reused more often, and can process feed water of up to 70°C compared to typical ultrafiltration membranes that cap out at about 38°C. This means the recycled water can be reused at higher temperatures, with the heat in it recovered by a precise steam heater built into The Grey Box. “As an overall measure, it saves 80 per cent of the water that is processed and saves 20 per cent of the energy,” Balemi said. Four systems have already been installed, with one going into a large commercial laundry in south Queensland and another to AMP's state-of-the-art 6 Green Star building in Brisbane. “We can modify them slightly to suit the industry, depending on the quality of raw water they are trying to recycle and also depending on the size of the project,,” said Balemi. Where many organisations build systems to specification, The Grey Box is offered in three standard sizes: the HY20 (20kL per day, based on a 10 hour day), HY80 (80kL per day) and HY130 (130kL per day). They can be used

  3. The decisive effect of interface states on the photocatalytic activity of the silver(I) oxide/titanium dioxide heterojunction.

    Science.gov (United States)

    Lei, Yanqiang; Lu, Xiaoqing

    2017-04-15

    A one-step hydrothermal method was adopted to synthesize the Ag 2 O/TiO 2 nanoheterojunction. Its photocatalytic activity was evaluated by degrading methylene blue (MB) aqueous solution under UV and visible light. The MB degradation results showed that the Ag 2 O/TiO 2 nanoheterojunction enhances the photocatalytic activity under UV irradiation rather than visible light. X-ray photoelectron spectroscopy (XPS) was performed to detect the electronic structure at the interface of Ag 2 O and TiO 2 . The XPS results confirmed that the electronic band structure of the nanoheterojunction was determined by the interface states between the Ag 2 O and TiO 2 interface. Thus, the photocatalytic enhancement mechanism can be ascribed to the creation of an additional potential barrier in the conduction band between Ag 2 O and TiO 2 , which facilitates the transport of holes from TiO 2 to Ag 2 O but inhibits the flow of electrons in the reverse direction unless sufficient potential energy is provided to overcome the additional barrier. Our results have provided a new insight on the role of interface states between the p-n nanojunction in the photocatalytic activity. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Bovet, N.; Kasama, Takeshi

    2014-01-01

    Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V−1 s−1 are achieved at this no...

  5. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

    Science.gov (United States)

    Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

    2018-04-01

    Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

  6. Improving cyclic stability of lithium nickel manganese oxide cathode for high voltage lithium ion battery by modifying electrode/electrolyte interface with electrolyte additive

    International Nuclear Information System (INIS)

    Li, Bin; Wang, Yaqiong; Tu, Wenqiang; Wang, Zaisheng; Xu, Mengqing; Xing, Lidan; Li, Weishan

    2014-01-01

    Highlights: • Cyclic stability of LiNi 0.5 Mn 1.5 O 4 is improved significantly by using PES as additive. • A protective SEI is formed on LiNi 0.5 Mn 1.5 O 4 due to the preferential oxidation of PES. • The SEI suppresses electrolyte decomposition and structure destruction of LiNi 0.5 Mn 1.5 O 4 . - Abstract: We report a new approach to improve the cyclic stability of lithium nickel manganese oxide (LiNi 0.5 Mn 1.5 O 4 ) cathode, in which the cathode/electrolyte interface is modified by using prop-1-ene-1, 3-sultone (PES) as an electrolyte additive. The interfacial properties of LiNi 0.5 Mn 1.5 O 4 cathode in PES-containing electrolyte have been investigated by scanning electron spectroscopy (SEM), transmission electron microscopy (TEM), thermal gravimetry (TG), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), cyclic voltammometry (CV), chronoamperometry (CA), and constant current charge/discharge test. It is found that the application of PES improves significantly the cyclic stability of LiNi 0.5 Mn 1.5 O 4 . After 400 cycles at 1C rate (1C=147 mA g −1 ), the capacity retention of LiNi 0.5 Mn 1.5 O 4 is 90% for the cell using 1.0 wt% PES, while only 49% for the cell without the additive. The characterizations from SEM, TEM, TG, XRD, and XPS confirm that the LiNi 0.5 Mn 1.5 O 4 /electrolyte interface is modified and a protective solid electrolyte interface film is formed on LiNi 0.5 Mn 1.5 O 4 particles, which prevents LiNi 0.5 Mn 1.5 O 4 from destruction and suppresses the electrolyte decomposition

  7. Microclimate boxes for panel paintings

    DEFF Research Database (Denmark)

    Wadum, Jørgen

    1998-01-01

    The use of microclimate boxes to protect vulnerable panel paintings is, therefore, not a new phenomenon of the past two or three decades. Rather, it has been a concern for conservators and curators to protect these objects of art at home and in transit since the end of the nineteenth century....... The increased number of travelling exhibitions in recent years has heightened the need to protect paintings during circulation (Thomson 1961; Mecklenburg 1991). The use and design of microclimate boxes have been evolving since 1892. These boxes may be divided into three broad groups: those using an active...... buffer material to stabilize the internal RH, a more recent box containing no added buffer material, and, in recent times, boxes with an altered gas content. Another concern is the appearance (aesthetics) of the box....

  8. The Formation Time of Ti-O• and Ti-O•-Ti Radicals at the n-SrTiO3/Aqueous Interface during Photocatalytic Water Oxidation.

    Science.gov (United States)

    Chen, Xihan; Choing, Stephanie N; Aschaffenburg, Daniel J; Pemmaraju, C D; Prendergast, David; Cuk, Tanja

    2017-02-08

    The initial step of photocatalytic water oxidation reaction at the metal oxide/aqueous interface involves intermediates formed by trapping photogenerated, valence band holes on different reactive sites of the oxide surface. In SrTiO 3, these one-electron intermediates are radicals located in Ti-O • (oxyl) and Ti-O • -Ti (bridge) groups arranged perpendicular and parallel to the surface respectively, and form electronic states in the band gap of SrTiO 3 . Using an ultrafast sub band gap probe of 400 nm and white light, we excited transitions between these radical states and the conduction band. By measuring the time evolution of surface reflectivity following the pump pulse of 266 nm light, we determined an initial radical formation time of 1.3 ± 0.2 ps, which is identical to the time to populate the surface with titanium oxyl (Ti-O • ) radicals. The oxyl was separately observed by a subsurface vibration near 800 cm -1 from Ti-O located in the plane right below Ti-O • . Second, a polarized transition optical dipole allows us to assign the 1.3 ps time constant to the production of both O-site radicals. After a 4.5 ps delay, another distinct surface species forms with a time constant of 36 ± 10 ps with a yet undetermined structure. As would be expected, the radicals' decay, specifically probed by the oxyl's subsurface vibration, parallels that of the photocurrent. Our results led us to propose a nonadiabatic kinetic mechanism for generating radicals of the type Ti-O • and Ti-O • -Ti from valence band holes based on their solvation at aqueous interfaces.

  9. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers

    International Nuclear Information System (INIS)

    Sohal, R.

    2006-01-01

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO 2 /SiC interface. Clean, graphite-free SiO 2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr 2 O 3 on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr 2 O 3 and SiC, and simultaneously provide higher band offsets. (orig.)

  10. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with pradeodymium oxide dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Sohal, R.

    2006-07-24

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO{sub 2}/SiC interface. Clean, graphite-free SiO{sub 2} has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr{sub 2}O{sub 3} on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr{sub 2}O{sub 3} and SiC, and simultaneously provide higher band offsets. (orig.)

  11. Box-particle intensity filter

    OpenAIRE

    Schikora, Marek; Gning, Amadou; Mihaylova, Lyudmila; Cremers, Daniel; Koch, Wofgang; Streit, Roy

    2012-01-01

    This paper develops a novel approach for multi-target tracking, called box-particle intensity filter (box-iFilter). The approach is able to cope with unknown clutter, false alarms and estimates the unknown number of targets. Furthermore, it is capable of dealing with three sources of uncertainty: stochastic, set-theoretic and data association uncertainty. The box-iFilter reduces the number of particles significantly, which improves the runtime considerably. The low particle number enables thi...

  12. Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces

    International Nuclear Information System (INIS)

    Schmeisser, D.; Zheng, F.; Perez-Dieste, V.; Himpsel, F.J.; LoNigro, R.; Toro, R.G.; Malandrino, G.; Fragala, I.L.

    2006-01-01

    The composition and chemical bonding of the first atoms across the interface between Si(001) and the dielectric determine the quality of dielectric gate stacks. An analysis of that hidden interface is a challenge as it requires both, high sensitivity and elemental and chemical state information. We used X-ray absorption spectroscopy in total electron yield and total fluorescence yield at the Si2p and the O1s edges to address that issue. We report on results of Pr 2 O 3 /Si(001) as prepared by both, epitaxial growth and metal organic chemical vapor deposition (MOCVD), and compare to the SiO 2 /Si(001) system as a reference. We find evidence for the silicate formation at the interface as derived from the characteristic features at the Si2p and the O1s edges. The results are in line with model experiments in which films of increasing film thickness are deposited in situ on bare Si(001) surfaces

  13. Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

  14. The Classroom Animal: Box Turtles.

    Science.gov (United States)

    Kramer, David C.

    1986-01-01

    Provides basic information on the anatomy, physiology, behaviors, and distribution patterns of the box turtle. Offers suggestions for the turtle's care and maintenance in a classroom environment. (ML)

  15. Boxing-related head injuries.

    Science.gov (United States)

    Jayarao, Mayur; Chin, Lawrence S; Cantu, Robert C

    2010-10-01

    Fatalities in boxing are most often due to traumatic brain injury that occurs in the ring. In the past 30 years, significant improvements in ringside and medical equipment, safety, and regulations have resulted in a dramatic reduction in the fatality rate. Nonetheless, the rate of boxing-related head injuries, particularly concussions, remains unknown, due in large part to its variability in clinical presentation. Furthermore, the significance of repeat concussions sustained when boxing is just now being understood. In this article, we identify the clinical manifestations, pathophysiology, and management of boxing-related head injuries, and discuss preventive strategies to reduce head injuries sustained by boxers.

  16. A point defect model for the general and pitting corrosion on iron-oxide-electrolyte interface deduced from current oscillations

    CERN Document Server

    Pagitsas, M; Sazou, D

    2003-01-01

    Analysis of the passive-active oscillatory region of the Fe-0.75 M H sub 2 SO sub 4 system, perturbed by adding small amounts of halide species, allow the distinction between pitting and general corrosion. Complex periodic and aperiodic current oscillations characterize pitting corrosion whereas monoperiodic oscillations of a relaxation type indicate general corrosion. A point defect model (PDM) is considered for the microscopic description of the growth and breakdown of the iron oxide film. The physicochemical processes leading to different types of corrosion can be clarified in terms of the PDM. Occupation of an anion vacancy by a halide ion results in the localized attack of the passive oxide and pitting corrosion. On the other hand, the formation of surface soluble iron complexes is related to the uniform dissolution of the passive oxide and general corrosion.

  17. CO oxidation on PtSn nanoparticle catalysts occurs at the interface of Pt and Sn oxide domains formed under reaction conditions

    KAUST Repository

    Michalak, William D.; Krier, James M.; Alayoglu, Selim; Shin, Jae-Yoon; An, Kwangjin; Komvopoulos, Kyriakos; Liu, Zhi; Somorjai, Gabor A.

    2014-01-01

    The barrier to CO oxidation on Pt catalysts is the strongly bound adsorbed CO, which inhibits O2 adsorption and hinders CO2 formation. Using reaction studies and in situ X-ray spectroscopy with colloidally prepared, monodisperse ∼2 nm Pt and PtSn

  18. Homogenization conditions affect the oxidative stability of fish oil enriched milk emulsions: Oxidation linked to changes in protein composition at the oil-water interface

    DEFF Research Database (Denmark)

    Sørensen, Ann-Dorit Moltke; Baron, Caroline; Bruni Let, Mette

    2007-01-01

    Fish oil was incorporated into milk under different homogenization temperatures (50 and 72 °C) and pressures (5, 15, and 22.5 MPa). Subsequently, the oxidative stability of the milk and changes in the protein composition of the milk fat globule membrane (MFGM) were examined. Results showed...

  19. Acsys in a box

    International Nuclear Information System (INIS)

    Briegel, C.; Finstrom, D.; Hendricks, B.; King, C.; Lackey, S.; Neswold, R.; Nicklaus, D.; Patrick, J.; Petrov, A.; Rechenmacher, R.; Schumann, C.; Smedinghoff, J.

    2012-01-01

    The Accelerator Control System (ACSYS) at Fermilab has evolved to enable this relatively large control system to be encapsulated into a 'box' such as a laptop. The goal was to provide a platform isolated from the 'online' control system. This platform can be used internally for making major upgrades and modifications without impacting operations. It also provides a stand-alone environment for research and development including a turnkey control system for collaborators. Over time, the code base running on Scientific Linux has enabled all the salient features of the Fermilab's control system to be captured in an off-the-shelf laptop. The anticipated additional benefits of packaging the system include improved maintenance, reliability, documentation, and future enhancements. (authors)

  20. Boxing with Bell

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-04-01

    When Protech Mining moved onto a greenfields site near Ermelo in mid-November last year to start work on the establishment of a box cut for an underground bituminous coal and anthracite mine for Delta Colliery, the company could not have foreseen the difficulties it was to encounter from the unusually high rainfall which fell, almost without abatement, from the time the first sod was turned. Production at the so called Mooiplants mine will commence in March 2001. Mining will take place at a maximum depth of 47 m and coal will be extracted from underground by two conveyor belts and stockpiled. Bell B40 CM mining trucks and an 18 Bell B20 articulated dump truck will be in the haulage fleet. 3 photos.

  1. The Interface Structure of High-Temperature Oxidation-Resistant Aluminum-Based Coatings on Titanium Billet Surface

    Science.gov (United States)

    Xu, Zhefeng; Rong, Ju; Yu, Xiaohua; Kun, Meng; Zhan, Zhaolin; Wang, Xiao; Zhang, Yannan

    2017-10-01

    A new type of high-temperature oxidation-resistant aluminum-based coating, on a titanium billet surface, was fabricated by the cold spray method, at a high temperature of 1050°C, for 8 h, under atmospheric pressure. The microstructure of the exposed surface was analyzed via optical microscopy, the microstructure of the coating and elemental diffusion was analyzed via field emission scanning electron microscopy, and the interfacial phases were identified via x-ray diffraction. The Ti-Al binary phase diagram and Gibbs free energy of the stable phase were calculated by Thermo-calc. The results revealed that good oxidation resistant 50-μm-thick coatings were successfully obtained after 8 h at 1050°C. Two layers were obtained after the coating process: an Al2O3 oxidation layer and a TiAl3 transition layer on the Ti-based substrate. The large and brittle Al2O3 grains on the surface, which can be easily spalled off from the surface after thermal processing, protected the substrate against oxidation during processing. In addition, the thermodynamic calculation results were in good agreement with the experimental data.

  2. CO Adsorption and Oxidation at the Catalyst-Water Interface: An Investigation by Attenuated Total Reflection Infrared Spectroscopy.

    NARCIS (Netherlands)

    Ebbesen, S.D.; Mojet, Barbara; Lefferts, Leonardus

    2006-01-01

    Adsorption of carbon monoxide and oxidation of preadsorbed carbon monoxide from gas and aqueous phases were studied on a platinum catalyst deposited on a ZnSe internal reflection element (IRE) using attenuated total reflection infrared (ATR-IR) spectroscopy. The results of this study convincingly

  3. Determination of the bonding strength in solid oxide fuel cells’interfaces by Schwickerath crack initiation test

    Czech Academy of Sciences Publication Activity Database

    Boccaccini, D. N.; Ševeček, O.; Frandsen, L. H.; Dlouhý, Ivo; Molin, S.; Charlas, B.; Hjelm, J.; Cannio, M.; Hendriksen, P. V.

    2017-01-01

    Roč. 37, č. 11 (2017), s. 3565-3578 ISSN 0955-2219 Institutional support: RVO:68081723 Keywords : Schwickerath crack-initiation test * Three-point bending test * SOFC interfaces * Metal-ceramic bond strength Subject RIV: JI - Composite Materials OBOR OECD: Composites (including laminates, reinforced plastics, cermets, combined natural and synthetic fibre fabrics Impact factor: 3.411, year: 2016 https://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=3&SID=S1ftxS2ACYn8QwRNK3P&page=1&doc=1

  4. What Makes a Better Box?

    Science.gov (United States)

    Moyer, Richard; Everett, Susan

    2010-01-01

    Every morning, many Americans start their day with a bowl of cereal. Some spend time while they eat breakfast reading the back of the cereal box, but few consider its size, shape, and construction, or realize that it was designed by an engineer. This article describes a lesson in which students design, build, and critique cereal boxes. The lesson…

  5. Spirit Boxes: Expressions of Culture.

    Science.gov (United States)

    DeMuro, Ted

    1984-01-01

    After studying the culture and art of the ancient civilizations of South America, Mesopotamia, Greece, and Egypt, secondary level art students made spirit boxes as expressions of the various cultures. How to make the boxes and how to prepare the face molds are described. (RM)

  6. Relativistic particle in a box

    OpenAIRE

    Alberto, P.; Fiolhais, Carlos; Gil, Victor

    1996-01-01

    The problem of a relativistic spin 1/2 particle confined to a one-dimensional box is solved in a way that resembles closely the solution of the well known quantum-mechanical textbook problem of a non-relativistic particle in a box. The energy levels and probability density are computed and compared with the non-relativistic case

  7. Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

    Directory of Open Access Journals (Sweden)

    Kaleem Abbas

    2018-03-01

    Full Text Available The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.

  8. Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Gan, Yulin; Christensen, Dennis Valbjørn

    2017-01-01

    Modulation-doped oxide two-dimensional electron gas formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x = 0, 1/8, ...... of LSMO during the deposition of disordered LAO or that the energy levels of Mn 3d electrons at the interface of LSMO/STO are hardly varied even when changing the LSMO composition from LMO to SrMnO3....

  9. Channel box dimension measuring method

    International Nuclear Information System (INIS)

    Oshima, Hirotake; Jo, Hiroto.

    1994-01-01

    The present invention provides a method for measuring the entire length of a channel box of a fuel assembly of a BWR type reactor. Namely, four sensors are used as one set that generate ultrasonic waves from oblique upper portion, oblique lower portion, upper portion and lower portion of the channel box respectively. The distances between the four sensors and each of the portions of the channel box are measured respectively for both of a reference member and a member to be measured. The entire length of the channel box is measured by calculating the measured values and the angles of the obliquely disposed sensors according to a predetermined formula. According to the method of the present invention, the inclination of the channel box to be measured can be corrected. In addition, accuracy of the measurement is improved and the measuring time is saved as well as the measuring device and operation can be simplified. (I.S.)

  10. Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment

    NARCIS (Netherlands)

    Landheer, K.; Bronsveld, P.C.P.; Poulios, I.; Tichelaar, F.D.; Kaiser, M.; Schropp, R.E.I.; Rath, J.K.

    2017-01-01

    An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the

  11. Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation

    Science.gov (United States)

    Jayawardena, Asanka; Shen, X.; Mooney, P. M.; Dhar, Sarit

    2018-06-01

    Interfacial charge trapping in 4H–SiC MOS capacitors with P doped SiO2 or phospho-silicate glass (PSG) as a gate dielectric has been investigated with temperature dependent capacitance–voltage measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements. The measurements indicate that P doping in the dielectric results in significant reduction of near-interface electron traps that have energy levels within 0.5 eV of the 4H–SiC conduction band edge. Extracted trap densities confirm that the phosphorus induced near-interface trap reduction is significantly more effective than interfacial nitridation, which is typically used for 4H–SiC MOSFET processing. The CCDLTS measurements reveal that the two broad near-interface trap peaks, named ‘O1’ and ‘O2’, with activation energies around 0.15 eV and 0.4 eV below the 4H–SiC conduction band that are typically observed in thermal oxides on 4H–SiC, are also present in PSG devices. Previous atomic scale ab initio calculations suggested these O1 and O2 traps to be carbon dimers substituted for oxygen dimers (CO=CO) and interstitial Si (Sii) in SiO2, respectively. Theoretical considerations in this work suggest that the presence of P in the near-interfacial region reduces the stability of the CO=CO defects and reduces the density of Sii defects through the network restructuring. Qualitative comparison of results in this work and reported work suggest that the O1 and O2 traps in SiO2/4H–SiC MOS system negatively impact channel mobility in 4H–SiC MOSFETs.

  12. Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2017-04-01

    The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

  13. Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

    Science.gov (United States)

    Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

    2015-12-09

    The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

  14. Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

    Science.gov (United States)

    Mahato, Somnath; Puigdollers, Joaquim

    2018-02-01

    Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

  15. Characterization of the interface between an Fe–Cr alloy and the p-type thermoelectric oxide Ca{sub 3}Co{sub 4}O{sub 9}

    Energy Technology Data Exchange (ETDEWEB)

    Holgate, Tim C., E-mail: timholgate@hotmail.com [Dept. of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, Building 779, 4000 Roskilde (Denmark); Han, Li; Wu, NingYu [Dept. of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, Building 779, 4000 Roskilde (Denmark); Bøjesen, Espen D.; Christensen, Mogens; Iversen, Bo B. [Centre for Materials Crystallography, Department of Chemistry and iNANO, Aarhus University, 8000 Aarhus C (Denmark); Nong, Ngo Van; Pryds, Nini [Dept. of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, Building 779, 4000 Roskilde (Denmark)

    2014-01-05

    Highlights: • The competitive thermoelectric oxide Ca{sub 3}Co{sub 4}O{sub 9} and a custom Fe–Cr alloy were interfaced using spark plasma sintering. • Compared to similarly contacted Ni/Ca{sub 3}Co{sub 4}O{sub 9} interfaces, the high-temperature stability and electrical contact resistance were improved. • The successes and issues associated with this interfacing technique and the materials involved are discussed. -- Abstract: A customized Fe–Cr alloy that has been optimized for high temperature applications in oxidizing atmospheres has been interfaced via spark plasma sintering (SPS) with a p-type thermoelectric oxide material: calcium cobaltate (Ca{sub 3}Co{sub 4}O{sub 9}). The properties of the alloy have been analyzed for its compatibility with the Ca{sub 3}Co{sub 4}O{sub 9} in terms of its thermal expansion and transport properties. The thermal and electrical contact resistances have been measured as a function of temperature, and the long term electronic integrity of the interface analyzed by measuring the resistance vs. time at an elevated temperature. The kinetics of the interface have been analyzed through imaging with scanning electron microscopy (SEM), elemental analysis using energy dispersive spectroscopy (EDS), and phase identification with X-ray diffraction (XRD). The results reveal the formation of an intermediate phase containing calcium and chromium in the interface that is highly resistive at room temperature, but conducting at the intended thermoelectric device hot-side operating temperature of 800 °C. As the alloy is well matched in terms of its thermal expansion and highly conducting compared to the Ca{sub 3}Co{sub 4}O{sub 9}, it may be further considered as an interconnect material candidate at least with application on the hot-side of an oxide thermoelectric power generation module.

  16. Thinking Inside the Box

    International Nuclear Information System (INIS)

    Boeheim, Charles T.

    2007-01-01

    In early 2007, SLAC was faced with a shortage of both electrical power and cooling in the main computer building, at the same time that the BaBar collaboration needed a new cluster of 250 batch machines installed. A number of different options were explored for the expansion. Provision of additional electrical power to the building was estimated to take one to two years, and cost several million dollars; additional cooling was even worse. Space in a Silicon Valley co-location facilities was reasonable on a one-year timescale, but broke even in costs by the end of three years, and were more expensive after that. There were also unresolved questions about the affects of additional latency from an offsite compute cluster to the onsite disk servers. The option of converting existing experimental hall space into computer space was estimated at one year, with uncertain availability. An option to aggressively replace several existing clusters with more power-efficient equipment was studied closely, but was disruptive to continued operations, expensive, and didn't provide any additional headroom. Finally, the installation of a Sun Project Blackbox (PBB) unit was selected as providing the capacity on a timescale of six months for a reasonable cost with minimal disruption to service. SLAC obtained and installed a beta unit and have been running it in production since September 2007. The experiences described are with the Early Access version of the PBB. The production version of the box has engineering changes based in part on our experiences

  17. Electronic Structure of the Perylene / Zinc Oxide Interface: A Computational Study of Photoinduced Electron Transfer and Impact of Surface Defects

    KAUST Repository

    Li, Jingrui

    2015-07-29

    The electronic properties of dye-sensitized semiconductor surfaces consisting of pery- lene chromophores chemisorbed on zinc oxide via different spacer-anchor groups, have been studied at the density-functional-theory level. The energy distributions of the donor states and the rates of photoinduced electron transfer from dye to surface are predicted. We evaluate in particular the impact of saturated versus unsaturated aliphatic spacer groups inserted between the perylene chromophore and the semiconductor as well as the influence of surface defects on the electron-injection rates.

  18. Electronic Structure of the Perylene / Zinc Oxide Interface: A Computational Study of Photoinduced Electron Transfer and Impact of Surface Defects

    KAUST Repository

    Li, Jingrui; Li, Hong; Winget, Paul; Bredas, Jean-Luc

    2015-01-01

    The electronic properties of dye-sensitized semiconductor surfaces consisting of pery- lene chromophores chemisorbed on zinc oxide via different spacer-anchor groups, have been studied at the density-functional-theory level. The energy distributions of the donor states and the rates of photoinduced electron transfer from dye to surface are predicted. We evaluate in particular the impact of saturated versus unsaturated aliphatic spacer groups inserted between the perylene chromophore and the semiconductor as well as the influence of surface defects on the electron-injection rates.

  19. Mapping the Binding Interface of VEGF and a Monoclonal Antibody Fab-1 Fragment with Fast Photochemical Oxidation of Proteins (FPOP) and Mass Spectrometry

    Science.gov (United States)

    Zhang, Ying; Wecksler, Aaron T.; Molina, Patricia; Deperalta, Galahad; Gross, Michael L.

    2017-05-01

    We previously analyzed the Fab-1:VEGF (vascular endothelial growth factor) system described in this work, with both native top-down mass spectrometry and bottom-up mass spectrometry (carboxyl-group or GEE footprinting) techniques. This work continues bottom-up mass spectrometry analysis using a fast photochemical oxidation of proteins (FPOP) platform to map the solution binding interface of VEGF and a fragment antigen binding region of an antibody (Fab-1). In this study, we use FPOP to compare the changes in solvent accessibility by quantitating the extent of oxidative modification in the unbound versus bound states. Determining the changes in solvent accessibility enables the inference of the protein binding sites (epitope and paratopes) and a comparison to the previously published Fab-1:VEGF crystal structure, adding to the top-down and bottom-up data. Using this method, we investigated peptide-level and residue-level changes in solvent accessibility between the unbound proteins and bound complex. Mapping these data onto the Fab-1:VEGF crystal structure enabled successful characterization of both the binding region and regions of remote conformation changes. These data, coupled with our previous higher order structure (HOS) studies, demonstrate the value of a comprehensive toolbox of methods for identifying the putative epitopes and paratopes for biotherapeutic antibodies.

  20. The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

    International Nuclear Information System (INIS)

    Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang

    2012-01-01

    Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al 2 O 3 /Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH 4 ) 2 S passivation show less frequency dispersion than the HF pre-cleaning and (NH 4 ) 2 S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. (condensed matter: structure, mechanical and thermal properties)

  1. Controlled deposition of functionalized silica coated zinc oxide nano-assemblies at the air/water interface for blood cancer detection

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, Chandra Mouli [Biomedical Instrumentation Section, CSIR-National Physical Laboratory, New Delhi 110012 (India); Nanobioelectronics Laboratory, Department of Biotechnology, Delhi Technological University, Delhi 110042 (India); Dewan, Srishti [Biomedical Instrumentation Section, CSIR-National Physical Laboratory, New Delhi 110012 (India); Biomedical Engineering Department, Deenbandhu Chhotu Ram University of Science & Technology, Haryana 131039 (India); Chawla, Seema [Biomedical Engineering Department, Deenbandhu Chhotu Ram University of Science & Technology, Haryana 131039 (India); Yadav, Birendra Kumar [Rajiv Gandhi Cancer Institute and Research Centre, Rohini, Delhi 110085 (India); Sumana, Gajjala, E-mail: sumanagajjala@gmail.com [Biomedical Instrumentation Section, CSIR-National Physical Laboratory, New Delhi 110012 (India); Malhotra, Bansi Dhar, E-mail: bansi.malhotra@gmail.com [Biomedical Instrumentation Section, CSIR-National Physical Laboratory, New Delhi 110012 (India); Nanobioelectronics Laboratory, Department of Biotechnology, Delhi Technological University, Delhi 110042 (India)

    2016-09-21

    We report results of the studies relating to controlled deposition of the amino-functionalized silica-coated zinc oxide (Am-Si@ZnO) nano-assemblies onto an indium tin oxide (ITO) coated glass substrate using Langmuir-Blodgett (LB) technique. The monolayers have been deposited by transferring the spread solution of Am-Si@ZnO stearic acid prepared in chloroform at the air-water interface, at optimized pressure (16 mN/m), concentration (10 mg/ml) and temperature (23 °C). The high-resolution transmission electron microscopic studies of the Am-Si@ZnO nanocomposite reveal that the nanoparticles have a microscopic structure comprising of hexagonal assemblies of ZnO with typical dimensions of 30 nm. The surface morphology of the LB multilayer observed by scanning electron microscopy shows uniform surface of the Am-Si@ZnO film in the nanometer range (<80 nm). These electrodes have been utilized for chronic myelogenous leukemia (CML) detection by covalently immobilizing the amino-terminated oligonucleotide probe sequence via glutaraldehyde as a crosslinker. The response studies of these fabricated electrodes carried out using electrochemical impedance spectroscopy show that this Am-Si@ZnO LB film based nucleic acid sensor exhibits a linear response to complementary DNA (10{sup −6}–10{sup −16} M) with a detection limit of 1 × 10{sup −16} M. This fabricated platform is validated with clinical samples of CML positive patients and the results demonstrate its immense potential for clinical diagnosis. - Graphical abstract: Controlled deposition of functionalized silica coated zinc oxide nano-assemblies at the air/water interface for label free electrochemical detection of chronic myelogenous leukemia. - Highlights: • Stable and controlled deposition of Am-Si@ZnO nano-assemblies using LB technique. • Uniform monolayer deposition of the Am-Si@ZnO LB film within the nanometer range. • Am-Si@ZnO LB film shows enhanced electrochemical properties. • Fabricated

  2. Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1})

    Science.gov (United States)

    Shiomi, Hiromu; Kitai, Hidenori; Tsujimura, Masatoshi; Kiuchi, Yuji; Nakata, Daisuke; Ono, Shuichi; Kojima, Kazutoshi; Fukuda, Kenji; Sakamoto, Kunihiro; Yamasaki, Kimiyohi; Okumura, Hajime

    2016-04-01

    The effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}).

  3. Kinetic Interface

    DEFF Research Database (Denmark)

    2009-01-01

    A kinetic interface for orientation detection in a video training system is disclosed. The interface includes a balance platform instrumented with inertial motion sensors. The interface engages a participant's sense of balance in training exercises.......A kinetic interface for orientation detection in a video training system is disclosed. The interface includes a balance platform instrumented with inertial motion sensors. The interface engages a participant's sense of balance in training exercises....

  4. Improved Cycling Stability of Cobalt-free Li-rich Oxides with a Stable Interface by Dual Doping

    International Nuclear Information System (INIS)

    Xie, Dongjiu; Li, Guangshe; Li, Qi; Fu, Chaochao; Fan, Jianming; Li, Liping

    2016-01-01

    Highlights: • Cobalt-free Na_xLi_1_._2_-_xMn_0_._6_-_xAl_xNi_0_._2O_2 oxides are prepared by a sol-gel method. • Dual-doping strengthens the covalence of Mn-O bonds and suppresses the side reactions between cathode and electrolyte. • Doped cathode has a capacity retention over 92.2% after 100 cycles at a high temperature of 55 °C. - Abstract: Li-rich cobalt-free oxides, popularly used as a cathode with high capacity in lithium ion battery, always suffer from poor cycling stability between 2.0 and 4.8 V vs Li"+/Li, especially when cycled at high temperatures (>50 °C). To overcome this issue, Na"+ and Al"3"+ dual-doped Na_xLi_1_._2_-_xMn_0_._6_-_xAl_xNi_0_._2O_2 Li-rich cathode is prepared in this study. It is shown that the side reactions between cathode and electrolyte during cycling are suppressed. The improved cycling performance is observed for all of the doped samples, among which the sample with x = 0.03 exhibits the highest capacity retention of 86.1% after 200 cycles between 2.0 and 4.8 V at 2C (1C = 200 mA g"−"1) and shows a remarkable cycling stability, even at a high temperature of 55 °C (a capacity retention of 92.2% after 100 cycles). Moreover, the average voltage of the sample with x = 0.03 after 100 cycles at 0.5C remains at 3.11 V with a retention ratio of 86.6%. This work provides a new strategy to develop Li-rich cobalt-free cathodes with excellent cycling stability for lithium ion batteries at high temperatures.

  5. Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications

    International Nuclear Information System (INIS)

    Lim, Dong-Gun; Kwak, Dong-Joo; Yi Junsin

    2002-01-01

    In this paper, we report upon an investigation into the feasibility of Y 2 O 3 films as buffer layers for metal ferroelectric insulator semiconductor type capacitors. Buffer layers were prepared by a two-step process of low temperature film growth using the RF reactive magnetron sputtering method and subsequent rapid thermal annealing. By applying an yttrium metal seed layer of 4 nm, unwanted SiO 2 layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. Increasing the post-annealing temperature above 700 deg. C reduced the surface roughness of the Y 2 O 3 films, and increasing the O 2 partial pressure from 10 to 20% increased the surface roughness from 4.0 to 15.1 nm. The Y 2 O 3 films, prepared using an O 2 partial pressure of 20% and annealed at 900 deg. C, exhibited the best surface roughness characteristics of the samples studied. For a substrate temperature above 400 deg. C and an O 2 partial pressure of 20%, we observed that a cubic Y 2 O 3 phase dominated the X-ray diffraction spectra. The lowest lattice mismatch achieved between the Y 2 O 3 film and the Si substrate was 1.75%. By using a two-step process, we reduced the leakage current density of Y 2 O 3 films by two orders of magnitude and the D it to as low as 8.72x10 10 cm -2 eV -1 . A Y 2 O 3 buffer layer grown at 400 deg. C in a 20% O 2 partial pressure and rapidly annealed at 900 deg. C in an oxygen enviroment exhibited the best overall properties for a single transistor ferroelectric random access memory

  6. Fuel element box inspection device

    International Nuclear Information System (INIS)

    Ortmayer, R.M.; Pick, W.

    1985-01-01

    The invention concerns a device for inspecting the outer geometry of a long fuel element box by measuring the surface contours over its longitudinal crossection and along its length by sensors. These are kept in a sledge which can be moved along the fuel element guide in a slot guide. The measurement signals reach an evaluation device outside the longitudinal box. (orig./HP) [de

  7. Black holes in a box

    International Nuclear Information System (INIS)

    Witek, Helvi; Cardoso, Vitor; Nerozzi, Andrea; Gualtieri, Leonardo; Herdeiro, Carlos; Zilhao, Miguel; Sperhake, Ulrich

    2010-01-01

    The evolution of BHs in 'confining boxes' is interesting for a number of reasons, particularly because it mimics some aspects of anti-de Sitter spacetimes. These admit no Cauchy surface and are a simple example of a non-globally hyperbolic spacetime. We are here interested in the potential role that boundary conditions play in the evolution of a BH system. For that, we imprison a binary BH in a box, at which boundary we set mirror-like boundary conditions.

  8. Adaptation of Black-Box Software Components

    Directory of Open Access Journals (Sweden)

    Rolf Andreas Rasenack

    2008-01-01

    Full Text Available The globalization of the software market leads to crucial problems for software companies. More competition between software companies arises and leads to the force on companies to develop ever newer software products in ever shortened time interval. Therefore the time to market for software systems is shortened and obviously the product life cycle is shortened too. Thus software companies shortened the time interval for research and development. Due to the fact of competition between software companies software products have to develop low-priced and this leads to a smaller return on investment. A big challenge for software companies is the use of an effective research and development process to have these problems under control. A way to control these problems can be the reuse of existing software components and adapt those software components to new functionality or accommodate mismatched interfaces. Complete redevelopment of software products is more expensive and time consuming than to develop software components. The approach introduced here presents novel technique together with a supportive environment that enables developers to cope with the adaptability of black-box software components. A supportive environment will be designed that checks the compatibility of black-box software components with the assistance of their specifications. Generated adapter software components can take over the part of adaptation and advance the functionality. Besides, a pool of software components can be used to compose an application to satisfy customer needs. Certainly this pool of software components consists of black-box software components and adapter software components which can be connected on demand.

  9. Boxing headguard performance in punch machine tests.

    Science.gov (United States)

    McIntosh, Andrew S; Patton, Declan A

    2015-09-01

    The paper presents a novel laboratory method for assessing boxing headguard impact performance. The method is applied to examine the effects of headguards on head impact dynamics and injury risk. A linear impactor was developed, and a range of impacts was delivered to an instrumented Hybrid III head and neck system both with and without an AIBA (Association Internationale de Boxe Amateur)-approved headguard. Impacts at selected speeds between 4.1 and 8.3 m/s were undertaken. The impactor mass was approximately 4 kg and an interface comprising a semirigid 'fist' with a glove was used. The peak contact forces were in the range 1.9-5.9 kN. Differences in head impact responses between the Top Ten AIBA-approved headguard and bare headform in the lateral and forehead tests were large and/or significant. In the 8.3 m/s fist-glove impacts, the mean peak resultant headform accelerations for bare headform tests was approximately 130 g compared with approximately 85 g in the forehead impacts. In the 6.85 m/s bare headform impacts, mean peak resultant angular head accelerations were in the range of 5200-5600 rad/s(2) and almost halved by the headguard. Linear and angular accelerations in 45° forehead and 60° jaw impacts were reduced by the headguard. The data support the opinion that current AIBA headguards can play an important role in reducing the risk of concussion and superficial injury in boxing competition and training. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

  10. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2014-12-08

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

  11. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    International Nuclear Information System (INIS)

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

    2014-01-01

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm 2 /V s to 17.9 cm 2 /V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO 2 . Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm −3 to 5.83 g cm −3 (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability

  12. The lithium vapor box divertor

    International Nuclear Information System (INIS)

    Goldston, R J; Schwartz, J; Myers, R

    2016-01-01

    It has long been recognized that volumetric dissipation of the plasma heat flux from a fusion power system is preferable to its localized impingement on a material surface. Volumetric dissipation mitigates both the anticipated very high heat flux and intense particle-induced damage due to sputtering. Recent projections to a tokamak demonstration power plant suggest an immense upstream parallel heat flux, of order 20 GW m −2 , implying that fully detached operation may be a requirement for the success of fusion power. Building on pioneering work on the use of lithium by Nagayama et al and by Ono et al as well as earlier work on the gas box divertor by Watkins and Rebut, we present here a concept for a lithium vapor box divertor, in which lithium vapor extracts momentum and energy from a fusion-power-plant divertor plasma, using fully volumetric processes. At the high powers and pressures that are projected this requires a high density of lithium vapor, which must be isolated from the main plasma in order to avoid lithium build-up on the chamber walls or in the plasma. Isolation is achieved through a powerful multi-box differential pumping scheme available only for condensable vapors. The preliminary box-wise calculations are encouraging, but much more work is required to demonstrate the practical viability of this scheme, taking into account at least 2D plasma and vapor flows within and between the vapor boxes and out of the vapor boxes to the main plasma. (paper)

  13. Mapping the surface (hydr)oxo-groups of titanium oxide and its interface with an aqueous solution: the state of the art and a new approach.

    Science.gov (United States)

    Panagiotou, George D; Petsi, Theano; Bourikas, Kyriakos; Garoufalis, Christos S; Tsevis, Athanassios; Spanos, Nikos; Kordulis, Christos; Lycourghiotis, Alexis

    2008-10-01

    In this article the "titanium oxide/electrolyte solution" interface is studied by taking in advantage the recent developments in the field of Surface and Interface Chemistry relevant to this oxide. Ab-initio calculations were performed in the frame of the DFT theory for estimating the charge of the titanium and oxygen atoms exposed on the anatase (1 0 1), (1 0 0), (0 0 1), (1 0 3)(f) and rutile (1 1 0) crystal faces. These orientations have smaller surface energy with respect to other ones and thus it is more probable to be the real terminations of the anatase and rutile nanocrystallites in the titania polycrystalline powders. Potentiometric titrations for obtaining "fine structured" titration curves as well as microelectrophoresis and streaming potential measurements have been performed. On the basis of ab-initio calculations, and taking into account the relative contribution of each crystal face to the whole surface of the nanocrystals involved in the titania aggregates of a suspension, the three most probable surface ionization models have been derived. These models and the Music model are then tested in conjunction with the "Stern-Gouy-Chapman" and "Basic Stern" electrostatic models. The finally selected surface ionization model (model A) in combination with each one of the two electrostatic models describes very well the protonation/deprotonation behavior of titania. The description is also very good if this model is combined with the Three Plane (TP) model. The application of the "A/(TP)" model allowed mapping the surface (hydr)oxo-groups [TiO(H) and Ti(2)O(H)] of titania exposed in aqueous solutions. At pH>pzc almost all terminal oxygens [TiO] are non-protonated whereas even at low pH values the non-protonated terminal oxygens predominate. The acid-base behavior of the bridging oxygens [Ti(2)O] is different. Thus, even at pH=10 the greater portion of them is protonated. The application of the "A/TP" model in conjunction with potentiometric titrations

  14. Evolution of the nickel/zirconia interface

    International Nuclear Information System (INIS)

    Shinde, S.L.; Olson, D.A.; De Jonghe, L.C.; Miller, R.A.

    1986-01-01

    The changes taking place at the nickel zirconia interface during oxidation in air at 900 0 C were studied using analytical electron microscopy (AEM). The nickel oxide layer growing at the interface and the stabilizers used in zirconia interact, giving different interface morphologies

  15. Metal-Anion Pairing at Oxide/Water Interfaces: Theoretical and Experimental Investigations from the Nanoscale to the Macroscale

    Energy Technology Data Exchange (ETDEWEB)

    Allen, Heather [The Ohio State Univ., Columbus, OH (United States)

    2016-11-14

    We combine the use of several techniques including bulk adsorption experiments, X-ray absorption, infrared, total internal reflection Raman, and vibrational sum frequencygeneration (XAS, IR, TIR-Raman, VSFG) spectroscopies, and molecular modeling to investigate ion adsorption at mineral surfaces. XAS and TIR-Raman provides data on how the metal binds to the surface (e.g., monodentate, bidentate), IR provides data on bulk anion adsorption at mineral surfaces from aqueous solutions, and VSFG provides surface specific data on anion adsorption at the mineral surface as well as impact of adsorbed metal-anion pairs on water structure at the mineral surface. Molecular modeling is used to guide spectroscopic data interpretation by providing information on water structure around ions in solution and the structure of metal-anion complexes in aqueous solutions. In addition, molecular modeling is used to provide insight into water structure at mineral surfaces, the surface sites involved in ion adsorption, and the distribution of ion pairs between aqueous solution and the mineral surface. Our studies have focused on systems involving alkaline earth metal (Mg2+, Ca2+, Sr2+, Ba2+) and heavy metal (Co2+, Cd2+) cations. The anions we have selected for studyinclude Cl-, NO3-, ClO4-, SO42-, SeO32-, and SeO42-. Ion adsorption and the potential formation ofternary complexes on silica (quartz, amorphous silica), alumina (corundum and gibbsite), and ferric iron oxides (goethite and hematite) are under investigation.

  16. Correlation of Chemisorption and Electronic Effects for Metal Oxide Interfaces: Transducing Principles for Temperature Programmed Gas Microsensors. Final Report

    International Nuclear Information System (INIS)

    Semancik, S.; Cavicchi, R. E.; DeVoe, D. L.; McAvoy, T. J.

    2001-01-01

    This Final Report describes efforts and results for a 3-year DoE/OST-EMSP project centered at NIST. The multidisciplinary project investigated scientific and technical concepts critical for developing tunable, MEMS-based, gas and vapor microsensors that could be applied for monitoring the types of multiple analytes (and differing backgrounds) encountered at DoE waste sites. Micromachined ''microhotplate'' arrays were used as platforms for fabricating conductometric sensor prototypes, and as microscale research tools. Efficient microarray techniques were developed for locally depositing and then performance evaluating thin oxide films, in order to correlate gas sensing characteristics with properties including composition, microstructure, thickness and surface modification. This approach produced temperature-dependent databases on the sensitivities of sensing materials to varied analytes (in air) which enable application-specific tuning of microsensor arrays. Mechanistic studies on adsorb ate transient phenomena were conducted to better understand the ways in which rapid temperature programming schedules can be used to produce unique response signatures and increase information density in microsensor signals. Chemometric and neural network analyses were also employed in our studies for recognition and quantification of target analytes

  17. Plate forming and break down pizza box

    Science.gov (United States)

    Pantisano, Frank; Devine, Scott M.

    1992-01-01

    A standard corrugated paper pizza box is provided with slit cuts cut through the top panel of the pizza box in a shape to form four circular serving plates with a beveled raised edge and cross slit cuts through the bottom panel of the pizza box separating the box into four essentially equal portions for easy disposal.

  18. Injury risk in professional boxing.

    Science.gov (United States)

    Bledsoe, Gregory H; Li, Guohu; Levy, Fred

    2005-10-01

    Although a popular endeavor, boxing has fallen under increased scrutiny because of its association with traumatic brain injury. However, few studies have investigated the overall epidemiology of boxing injuries from representative samples, and no study has ever documented the incidence of injuries in female boxers. This study is a review of professional boxing data from the state of Nevada from September 2001 through March 2003. Medical and outcome data for all professional boxing matches occurring in Nevada between September 2001 and March 2003 (n = 524 matches) were analyzed on the basis of a pair-matched, case-control design. Cases were boxers who received an injury during the boxing matches. Boxers who were not injured served as control subjects. Both conditional and unconditional logistic regression models were used to assess risk factors for injury. The overall incidence rate of injury was 17.1 per 100 boxer-matches, or 3.4 per 100 boxer-rounds. Facial laceration accounted for 51% of all injuries, followed by hand injury (17%), eye injury (14%), and nose injury (5%). Male boxers were significantly more likely than female boxers to receive injuries (3.6 versus 1.2 per 100 boxer-rounds, P = 0.01). Male boxing matches also ended in knockouts and technical knockouts more often than did female matches (P boxing matches is high, particularly among male boxers. Superficial facial lacerations are the most common injury reported. Male boxers have a higher rate of knockout and technical knockouts than female boxers. Further research is necessary to determine the outcomes of injury, particularly the long-term neurologic outcome differences between sexes.

  19. Box graphs and resolutions I

    Directory of Open Access Journals (Sweden)

    Andreas P. Braun

    2016-04-01

    Full Text Available Box graphs succinctly and comprehensively characterize singular fibers of elliptic fibrations in codimension two and three, as well as flop transitions connecting these, in terms of representation theoretic data. We develop a framework that provides a systematic map between a box graph and a crepant algebraic resolution of the singular elliptic fibration, thus allowing an explicit construction of the fibers from a singular Weierstrass or Tate model. The key tool is what we call a fiber face diagram, which shows the relevant information of a (partial toric triangulation and allows the inclusion of more general algebraic blowups. We shown that each such diagram defines a sequence of weighted algebraic blowups, thus providing a realization of the fiber defined by the box graph in terms of an explicit resolution. We show this correspondence explicitly for the case of SU(5 by providing a map between box graphs and fiber faces, and thereby a sequence of algebraic resolutions of the Tate model, which realizes each of the box graphs.

  20. Decontamination of TRU glove boxes

    International Nuclear Information System (INIS)

    Crawford, J.H.

    1978-03-01

    Two glove boxes that had been used for work with transuranic nuclides (TRU) for about 12 years were decontaminated in a test program to collect data for developing a decontamination facility for large equipment highly contaminated with alpha emitters. A simple chemical technique consisting of a cycle of water flushes and alkaline permanganate and oxalic acid washes was used for both boxes. The test showed that glove boxes and similar equipment that are grossly contaminated with transuranic nuclides can be decontaminated to the current DIE nonretrievable disposal guide of <10 nCi TRU/g with a moderate amount of decontamination solution and manpower. Decontamination of the first box from an estimated 1.3 Ci to about 5 mCi (6 nCi/g) required 1.3 gallons of decontamination solution and 0.03 man-hour of work for each square foot of surface area. The second box was decontaminated from an estimated 3.4 Ci to about 2.8 mCi (4.2 nCi/g) using 0.9 gallon of decontamination solution and 0.02 man-hour for each square foot of surface area. Further reductions in contamination were achieved by repetitive decontamination cycles, but the effectiveness of the technique decreased sharply after the initial cycle

  1. First-aid boxes - Reminder

    CERN Multimedia

    GS Department

    2010-01-01

    With a view to ensuring optimum use of the first-aid boxes on the CERN site, we should like to remind you of various changes introduced in March 2009: The TSO of the buildings concerned is responsible for the first-aid boxes, including checking their contents.   First-aid boxes may be restocked ONLY at the CERN stores (SCEM No. 54.99.80). This is no longer possible at the Infirmary. The associated cost is charged to the Departments.   First-aid boxes should be used only for mild injuries. All other cases should be referred to the Medical Service Infirmary (Bldg. 57 – ground-floor, tel. 73802) between 8.00 a.m. and 5.30 p.m. or to the Fire and Rescue Service (tel. 74444). N.B.: This information does not apply to the red emergency first-aid boxes in the underground areas or to the emergency kits for use in the event of being splashed with hydrofluoric acid.

  2. Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

    Directory of Open Access Journals (Sweden)

    Jae Kwon Jeon

    2017-12-01

    Full Text Available We report two-step annealing, high temperature and sequent low temperature, for amorphous indium-gallium-zinc-oxide (a-IGZO thin-film transistor (TFT to improve its stability and device performance. The annealing is carried out at 300 oC in N2 ambient for 1 h (1st step annealing and then at 250 oC in vacuum for 10 h (2nd step annealing. It is found that the threshold voltage (VTH changes from 0.4 V to -2.0 V by the 1st step annealing and to +0.6 V by 2nd step annealing. The mobility changes from 18 cm2V-1s-1 to 25 cm2V-1s-1 by 1st step and decreases to 20 cm2V-1s-1 by 2nd step annealing. The VTH shift by positive bias temperature stress (PBTS is 3.7 V for the as-prepared TFT, and 1.7 V for the 1st step annealed TFT, and 1.3 V for the 2nd step annealed TFT. The XPS (X-ray photoelectron spectroscopy depth analysis indicates that the reduction in O-H bonds at the top interface (SiO2/a-IGZO by 2nd step annealing appears, which is related to the positive VTH shift and smaller VTH shift by PBTS.

  3. Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

    Science.gov (United States)

    Jeon, Jae Kwon; Um, Jae Gwang; Lee, Suhui; Jang, Jin

    2017-12-01

    We report two-step annealing, high temperature and sequent low temperature, for amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) to improve its stability and device performance. The annealing is carried out at 300 oC in N2 ambient for 1 h (1st step annealing) and then at 250 oC in vacuum for 10 h (2nd step annealing). It is found that the threshold voltage (VTH) changes from 0.4 V to -2.0 V by the 1st step annealing and to +0.6 V by 2nd step annealing. The mobility changes from 18 cm2V-1s-1 to 25 cm2V-1s-1 by 1st step and decreases to 20 cm2V-1s-1 by 2nd step annealing. The VTH shift by positive bias temperature stress (PBTS) is 3.7 V for the as-prepared TFT, and 1.7 V for the 1st step annealed TFT, and 1.3 V for the 2nd step annealed TFT. The XPS (X-ray photoelectron spectroscopy) depth analysis indicates that the reduction in O-H bonds at the top interface (SiO2/a-IGZO) by 2nd step annealing appears, which is related to the positive VTH shift and smaller VTH shift by PBTS.

  4. Tailoring the electrode-electrolyte interface of Solid Oxide Fuel Cells (SOFC) by laser micro-patterning to improve their electrochemical performance

    Science.gov (United States)

    Cebollero, J. A.; Lahoz, R.; Laguna-Bercero, M. A.; Larrea, A.

    2017-08-01

    Cathode activation polarisation is one of the main contributions to the losses of a Solid Oxide Fuel Cell. To reduce this loss we use a pulsed laser to modify the surface of yttria stabilized zirconia (YSZ) electrolytes to make a corrugated micro-patterning in the mesoscale. The beam of the laser source, 5 ns pulse width and emitting at λ = 532 nm (green region), is computer-controlled to engrave the selected micro-pattern on the electrolyte surface. Several laser scanning procedures and geometries have been tested. Finally, we engrave a square array with 28 μm of lattice parameter and 7 μm in depth on YSZ plates. With these plates we prepare LSM-YSZ/YSZ/LSM-YSZ symmetrical cells (LSM: La1-xSrxMnO3) and determine their activation polarisation by Electrochemical Impedance Spectroscopy (EIS). To get good electrode-electrolyte contact after sintering it is necessary to use pressure-assisted sintering with low loads (about 5 kPa), which do not modify the electrode microstructure. The decrease in polarisation with respect to an unprocessed cell is about 30%. EIS analysis confirms that the reason for this decrease is an improvement in the activation processes at the electrode-electrolyte interface.

  5. Oxygen exchange at gas/oxide interfaces: how the apparent activation energy of the surface exchange coefficient depends on the kinetic regime.

    Science.gov (United States)

    Fielitz, Peter; Borchardt, Günter

    2016-08-10

    In the dedicated literature the oxygen surface exchange coefficient KO and the equilibrium oxygen exchange rate [Fraktur R] are considered to be directly proportional to each other regardless of the experimental circumstances. Recent experimental observations, however, contradict the consequences of this assumption. Most surprising is the finding that the apparent activation energy of KO depends dramatically on the kinetic regime in which it has been determined, i.e. surface exchange controlled vs. mixed or diffusion controlled. This work demonstrates how the diffusion boundary condition at the gas/solid interface inevitably entails a correlation between the oxygen surface exchange coefficient KO and the oxygen self-diffusion coefficient DO in the bulk ("on top" of the correlation between KO and [Fraktur R] for the pure surface exchange regime). The model can thus quantitatively explain the range of apparent activation energies measured in the different regimes: in the surface exchange regime the apparent activation energy only contains the contribution of the equilibrium exchange rate, whereas in the mixed or in the diffusion controlled regime the contribution of the oxygen self-diffusivity has also to be taken into account, which may yield significantly higher apparent activation energies and simultaneously quantifies the correlation KO ∝ DO(1/2) observed for a large number of oxides in the mixed or diffusion controlled regime, respectively.

  6. Medical and Safety Reforms in Boxing

    Science.gov (United States)

    Jordan, Barry D.

    1988-01-01

    The continued existence of boxing as an accepted sport in civilized society has been long debated. The position of the American Medical Association (AMA) has evolved from promoting increased safety and medical reform to recommending total abolition of both amateur and professional boxing. In response to the AMA opposition to boxing, the boxing community has attempted to increase the safeguards in amateur and professional boxing. The United States of America Amateur Boxing Federation, which is the national regulatory agency for all amateur boxing in the United States, has taken several actions to prevent the occurrence of acute brain injury and is currently conducting epidemiologic studies to assess the long-term neuropsychologic consequences of amateur boxing. In professional boxing, state regulatory agencies such as the New York State Athletic Commission have introduced several medical interventions to prevent and reduce neurologic injury. The lack of a national regulatory agency to govern professional boxing has stimulated the formation of the Association of Boxing Commissions and potential legislation for the federal regulation of professional boxing by a federally chartered organization called the United States Boxing Commission. The AMA's opposition to boxing and the medical and safety reforms implemented by the proponents of boxing are discussed. PMID:3385788

  7. Identifying competencies of boxing coaches

    Directory of Open Access Journals (Sweden)

    Ioannis Tasiopoulos

    2014-10-01

    Full Text Available The purpose of this study was to find out the management skills required by boxing coaches to administrate their clubs. For the purposes of this study a scale was constructed which was answered by 98 boxing coaches. Explanatory factor analysis revealed seven factors: Communication-public relations (5 items, event management (4 items, management techniques (4 items, new technologies (4 items, prevention-safety (2 items, sport (5 items and sports facilities (2 items. The Cronbach of the scale was 0.85. The five competencies that rated by the coaches were: Supervisors of the area of training, maintaining excellent communication with athletes, using new technologies (e-mail, internet, handling disciplinary matters, accidents, complaints and reports on some sporting games and promoted harmony among athletes. We concluded that boxing coaches understand that the competencies required for meeting their obligations, were related to sports, prevention, safety and communications-public relations.

  8. Neurochemical aftermath of amateur boxing.

    Science.gov (United States)

    Zetterberg, Henrik; Hietala, M Albert; Jonsson, Michael; Andreasen, Niels; Styrud, Ewa; Karlsson, Ingvar; Edman, Ake; Popa, Cornel; Rasulzada, Abdullah; Wahlund, Lars-Olof; Mehta, Pankaj D; Rosengren, Lars; Blennow, Kaj; Wallin, Anders

    2006-09-01

    Little solid information is available on the possible risks for neuronal injury in amateur boxing. To determine whether amateur boxing and severity of hits are associated with elevated levels of biochemical markers for neuronal injury in cerebrospinal fluid. Longitudinal study. Referral center specializing in evaluation of neurodegenerative disorders. Fourteen amateur boxers (11 men and 3 women) and 10 healthy male nonathletic control subjects. The boxers underwent lumbar puncture 7 to 10 days and 3 months after a bout. The control subjects underwent LP once. Neurofilament light protein, total tau, glial fibrillary acidic protein, phosphorylated tau, and beta-amyloid protein 1-40 (Abeta([1-40])) and 1-42 (Abeta([1-42])) concentrations in cerebrospinal fluid were measured. Increased levels after a bout compared with after 3 months of rest from boxing were found for 2 markers for neuronal and axonal injury, neurofilament light protein (mean +/- SD, 845 +/- 1140 ng/L vs 208 +/- 108 ng/L; P = .008) and total tau (mean +/- SD, 449 +/- 176 ng/L vs 306 +/- 78 ng/L; P = .006), and for the astroglial injury marker glial fibrillary acidic protein (mean +/- SD, 541 +/- 199 ng/L vs 405 +/- 138 ng/L; P = .003). The increase was significantly higher among boxers who had received many hits (>15) or high-impact hits to the head compared with boxers who reported few hits. In the boxers, concentrations of neurofilament light protein and glial fibrillary acidic protein, but not total tau, were significantly elevated after a bout compared with the nonathletic control subjects. With the exception of neurofilament light protein, there were no significant differences between boxers after 3 months of rest from boxing and the nonathletic control subjects. Amateur boxing is associated with acute neuronal and astroglial injury. If verified in longitudinal studies with extensive follow-up regarding the clinical outcome, analyses of cerebrospinal fluid may provide a scientific basis for

  9. 46 CFR 111.81-1 - Outlet boxes and junction boxes; general.

    Science.gov (United States)

    2010-10-01

    ... fixture, wiring device, or similar item, including each separately installed connection and junction box... used. (d) As appropriate, each outlet-box or junction-box installation must meet the following...

  10. Size effects in shear interfaces

    OpenAIRE

    GARNIER, J

    2001-01-01

    In physical modelling (centrifuge tests, calibration chambers, laboratory tests), the size of the soil particles may not be negligible when compared to the dimensions of the models. Size effects may so disturb the response of the models and the experimental data obtained on these cannot be extended to true scale conditions. Different tests have been performed to study and quantify the size effects that may happen in shear interfaces between soils and structures : modified shear box tests, pul...

  11. Interface Consistency

    DEFF Research Database (Denmark)

    Staunstrup, Jørgen

    1998-01-01

    This paper proposes that Interface Consistency is an important issue for the development of modular designs. Byproviding a precise specification of component interfaces it becomes possible to check that separately developedcomponents use a common interface in a coherent matter thus avoiding a very...... significant source of design errors. Awide range of interface specifications are possible, the simplest form is a syntactical check of parameter types.However, today it is possible to do more sophisticated forms involving semantic checks....

  12. Interface models

    DEFF Research Database (Denmark)

    Ravn, Anders P.; Staunstrup, Jørgen

    1994-01-01

    This paper proposes a model for specifying interfaces between concurrently executing modules of a computing system. The model does not prescribe a particular type of communication protocol and is aimed at describing interfaces between both software and hardware modules or a combination of the two....... The model describes both functional and timing properties of an interface...

  13. On the Dirichlet's Box Principle

    Science.gov (United States)

    Poon, Kin-Keung; Shiu, Wai-Chee

    2008-01-01

    In this note, we will focus on several applications on the Dirichlet's box principle in Discrete Mathematics lesson and number theory lesson. In addition, the main result is an innovative game on a triangular board developed by the authors. The game has been used in teaching and learning mathematics in Discrete Mathematics and some high schools in…

  14. Glove boxes and similar containments

    International Nuclear Information System (INIS)

    Anon.

    1975-01-01

    According to the present invention a glove box or similar containment is provided with an exhaust system including a vortex amplifier venting into the system, the vortex amplifier also having its main inlet in fluid flow connection with the containment and a control inlet in fluid flow connection with the atmosphere outside the containment. (U.S.)

  15. Innovations in Los Alamos alpha box design

    International Nuclear Information System (INIS)

    Ledbetter, J.M.; Dowler, K.E.; Cook, J.H.

    1985-01-01

    Destructive examinations of irradiated fuel pins containing plutonium fuel must be performed in shielded hot cells with strict provisions for containing the plutonium. Alpha boxes provide containment for the plutonium, toxic fission products, and other hazardous highly radioactive materials. The alpha box contains windows for viewing and a variety of transfer systems specially designed to allow transfers in and out of the alpha box without spread of the hazardous materials that are contained in the box. Alpha boxes have been in use in the Wing 9 hot cells at Los Alamos National Laboratory for more than 20 years. Features of the newly designed alpha boxes are presented

  16. Influence of microstructural change of the interface between Nd2Fe14B and Nd-O phases on coercivity of Nd-Fe-B films by oxidation and subsequent low-temperature annealing

    International Nuclear Information System (INIS)

    Matsuura, Masashi; Tezuka, Nobuki; Sugimoto, Satoshi; Goto, Ryota

    2011-01-01

    This study provides the influence of microstructural change of the interface between Nd 2 Fe 14 B and Nd-O phases on coercivity of Nd-Fe-B thin films during annealing at low temperature (∼350 deg. C). All films were prepared by using ultra high vacuum (UHV) magnetron sputtering, and the Nd-Fe-B layer was oxidized under Ar gas atmosphere (O 2 content; ∼2 Vol.ppm). Then, the films were annealed at 250-350 deg. C under UHV condition. After oxidation, the coercivity of Nd-Fe-B film decreased to around 40% of the coercivity of as-deposited Nd-Fe-B film. The Nd-rich phase changed from α-Nd to amorphous Nd(-O), and the interface of Nd 2 Fe 14 B/Nd(-O) became rough. In the Nd-Fe-B films oxidized and subsequent annealed at 350 deg. C, the coercivity decreased to around 20%. In the films, poly crystalline hcp Nd 2 O 3 phase crystallized in Nd-rich phase, and there were some steps at the surface of Nd 2 Fe 14 B phase contacting with hcp Nd 2 O 3 phase. Regardless of crystal orientation of Nd 2 Fe 14 B, the microstructural changes of the interface described above were observed.

  17. Enhanced stability of solid oxide fuel cells by employing a modified cathode-interlayer interface with a dense La0.6Sr0.4Co0.2Fe0.8O3-δ thin film

    Science.gov (United States)

    De Vero, Jeffrey C.; Develos-Bagarinao, Katherine; Kishimoto, Haruo; Ishiyama, Tomohiro; Yamaji, Katsuhiko; Horita, Teruhisa; Yokokawa, Harumi

    2018-02-01

    In La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode/Gd-doped ceria (GDC)/yttria-stabilized zirconia (YSZ)-electrolyte based solid oxide fuel cells (SOFCs), one of the key issues affecting performance and long-term stability is the apparent deactivation of LSCF cathode by the presence of secondary phases such as SrZrO3 at the interfaces. Herein, we report that by modifying the cathode-interlayer interface with a dense LSCF thin film, the severe cation interdiffusion is suppressed especially the fast gas or surface diffusion of Sr into adjacent GDC-interlayer/YSZ-electrolyte resulting in the significant reduction of SrZrO3 formation at the interfaces improving cell stability. In order to understand the present results, the interface chemistry is carefully considered and discussed. The results show that modification of cathode-interlayer interfaces is an important strategy for improving the lifetime of SOFCs.

  18. Light Therapy Boxes for Seasonal Affective Disorder

    Science.gov (United States)

    Seasonal affective disorder treatment: Choosing a light therapy box Light therapy boxes can offer an effective treatment for seasonal affective disorder. Features such as light intensity, safety, cost and ...

  19. Box-particle probability hypothesis density filtering

    OpenAIRE

    Schikora, M.; Gning, A.; Mihaylova, L.; Cremers, D.; Koch, W.

    2014-01-01

    This paper develops a novel approach for multitarget tracking, called box-particle probability hypothesis density filter (box-PHD filter). The approach is able to track multiple targets and estimates the unknown number of targets. Furthermore, it is capable of dealing with three sources of uncertainty: stochastic, set-theoretic, and data association uncertainty. The box-PHD filter reduces the number of particles significantly, which improves the runtime considerably. The small number of box-p...

  20. The Heuristic Interpretation of Box Plots

    Science.gov (United States)

    Lem, Stephanie; Onghena, Patrick; Verschaffel, Lieven; Van Dooren, Wim

    2013-01-01

    Box plots are frequently used, but are often misinterpreted by students. Especially the area of the box in box plots is often misinterpreted as representing number or proportion of observations, while it actually represents their density. In a first study, reaction time evidence was used to test whether heuristic reasoning underlies this…

  1. Water box for steam generator

    International Nuclear Information System (INIS)

    Lecomte, Robert; Viaud, Michel.

    1975-01-01

    This invention relates to a water box for connecting an assembly composed of a vertical steam generator and a vertical pump to the vessel of the nuclear reactor, the assembly forming the primary cooling system of a pressurised water reactor. This invention makes it easy to dismantle the pump on the water box without significant loss of water in the primary cooling system of the reactor and particularly without it being necessary to drain the water contained in the steam generator beforehand. It makes it possible to shorten the time required for dismantling the primary pump in order to service or repair it and makes dismantling safer in that the dismantling does not involve draining the steam generator and therefore the critical storage of a large amount of cooling water that has been in contact with the fuel assemblies of the nuclear reactor core [fr

  2. Broken links and black boxes

    DEFF Research Database (Denmark)

    Sindbæk, Søren Michael

    2013-01-01

    Long-distance communication has emerged as a particular focus for archaeological exploration using network theory, analysis, and modelling. Initial attempts to adapt methods from social network analysis to archaeological data have, however, struggled to produce decisive results. This paper argues...... observable distributions and patterns of association in the archaeological record. In formal terms this is not a problem of network analysis, but network synthesis: the classic problem of cracking codes or reconstructing black-box circuits....

  3. Reflections on Andes' Goal-Free User Interface

    Science.gov (United States)

    VanLehn, Kurt

    2016-01-01

    Although the Andes project produced many results over its 18 years of activity, this commentary focuses on its contributions to understanding how a goal-free user interface impacts the overall design and performance of a step-based tutoring system. Whereas a goal-aligned user interface displays relevant goals as blank boxes or empty locations that…

  4. Invariant box-parameterization of neutrino oscillations

    International Nuclear Information System (INIS)

    Weiler, Thomas J.; Wagner, DJ

    1998-01-01

    The model-independent 'box' parameterization of neutrino oscillations is examined. The invariant boxes are the classical amplitudes of the individual oscillating terms. Being observables, the boxes are independent of the choice of parameterization of the mixing matrix. Emphasis is placed on the relations among the box parameters due to mixing-matrix unitarity, and on the reduction of the number of boxes to the minimum basis set. Using the box algebra, we show that CP-violation may be inferred from measurements of neutrino flavor mixing even when the oscillatory factors have averaged. General analyses of neutrino oscillations among n≥3 flavors can readily determine the boxes, which can then be manipulated to yield magnitudes of mixing matrix elements

  5. Invariant box parameterization of neutrino oscillations

    International Nuclear Information System (INIS)

    Weiler, T.J.; Wagner, D.

    1998-01-01

    The model-independent 'box' parameterization of neutrino oscillations is examined. The invariant boxes are the classical amplitudes of the individual oscillating terms. Being observables, the boxes are independent of the choice of parameterization of the mixing matrix. Emphasis is placed on the relations among the box parameters due to mixing matrix unitarity, and on the reduction of the number of boxes to the minimum basis set. Using the box algebra, we show that CP-violation may be inferred from measurements of neutrino flavor mixing even when the oscillatory factors have averaged. General analyses of neutrino oscillations among n≥3 flavors can readily determine the boxes, which can then be manipulated to yield magnitudes of mixing matrix elements. copyright 1998 American Institute of Physics

  6. High temperature interface superconductivity

    International Nuclear Information System (INIS)

    Gozar, A.; Bozovic, I.

    2016-01-01

    Highlight: • This review article covers the topic of high temperature interface superconductivity. • New materials and techniques used for achieving interface superconductivity are discussed. • We emphasize the role played by the differences in structure and electronic properties at the interface with respect to the bulk of the constituents. - Abstract: High-T_c superconductivity at interfaces has a history of more than a couple of decades. In this review we focus our attention on copper-oxide based heterostructures and multi-layers. We first discuss the technique, atomic layer-by-layer molecular beam epitaxy (ALL-MBE) engineering, that enabled High-T_c Interface Superconductivity (HT-IS), and the challenges associated with the realization of high quality interfaces. Then we turn our attention to the experiments which shed light on the structure and properties of interfacial layers, allowing comparison to those of single-phase films and bulk crystals. Both ‘passive’ hetero-structures as well as surface-induced effects by external gating are discussed. We conclude by comparing HT-IS in cuprates and in other classes of materials, especially Fe-based superconductors, and by examining the grand challenges currently laying ahead for the field.

  7. Organic interfaces

    NARCIS (Netherlands)

    Poelman, W.A.; Tempelman, E.

    2014-01-01

    This paper deals with the consequences for product designers resulting from the replacement of traditional interfaces by responsive materials. Part 1 presents a theoretical framework regarding a new paradigm for man-machine interfacing. Part 2 provides an analysis of the opportunities offered by new

  8. Interface Realisms

    DEFF Research Database (Denmark)

    Pold, Søren

    2005-01-01

    This article argues for seeing the interface as an important representational and aesthetic form with implications for postmodern culture and digital aesthetics. The interface emphasizes realism due in part to the desire for transparency in Human-Computer Interaction (HCI) and partly...

  9. Breaking open the set top box

    Science.gov (United States)

    Banks, David; Wiley, Anthony; Catania, Nicolas; Coles, Alastair N.; Smith, Duncan; Baynham, Simon; Deliot, Eric; Chidzey, Rod

    1998-02-01

    In this paper we describe the work being done at HP Labs Bristol in the area of home networks and gateways. This work is based on the idea of breaking open the set top box by physically separating the access network specific functions from the application specific functions. The access network specific functions reside in an access network gateway that can be shared by many end user devices. The first section of the paper present the philosophy behind this approach. The end user devices and the access network gateways must be interconnected by a high bandwidth network which can offer a bounded delay service for delay sensitive traffic. We are advocating the use of IEEE 1394 for this network, and the next section of the paper gives a brief introduction to this technology. We then describe a prototype digital video broadcasting satellite compliant gateway that we have built. This gateway could be used, for example, by a PC for receiving a data service or by a digital TV for receiving an MPEG-2 video service. A control architecture is the presented which uses a PC application to provide a web based user interface to the system. Finally, we provide details of our work on extending the reach of IEEE 1394 and its standardization status.

  10. Sulfur-Hz(CHx)y(z = 0,1) functionalized metal oxide nanostructure decorated interfaces: Evidence of Lewis base and Brönsted acid sites – Influence on chemical sensing

    International Nuclear Information System (INIS)

    Laminack, William; Baker, Caitlin; Gole, James

    2015-01-01

    Nanostructure metal oxide decorated n-type extrinsic porous silicon (PS) semiconductor interfaces are modified through in-situ interaction with acidic ethane and butane thiols (EtSH, BuSH) and basic diethyl sulfide (Et 2 S). Highly sensitive conductometric sensor evaluations and X-ray Photoelectron Spectroscopy demonstrate the effect of sulfur group functionalization modifying the acidity of the metal oxides and their interaction with NH 3 . SEM micrographs demonstrate that the sulfur treated particles are less than 30 nm in size. EDAX studies confirm the chemical composition of the modified nanoparticles and suggest the surface interaction of the sulfides and thiols. The acidic thiols can form Brönsted acidic sites enhancing the acidity of the metal oxides, thus broadening the initial metal oxide acidity range. The sulfides interact to lower the Lewis acidity of nanostructured metal oxide sites. Conductometric response matrices with NH 3 at room temperature, corresponding to the thiol and sulfide treated nanostructures of the metal oxides TiO 2 , SnO x , Ni x O, Cu x O, and Au x O (x >> 1) are evaluated for a dominant electron transduction process forming the basis for reversible chemical sensing in the absence of chemical bond formation. Treatment with the acidic thiols enhances the metal center acidity. It is suggested that the thiols can interact to increase the Brönsted acidity of the doped metal oxide surface if they maintain SH bonds. This process may account for the shift in Lewis acidity as the Brönsted acid sites counter the decrease in Lewis acidity resulting from the interaction of S-(CH x ) y groups. In contrast, treatment with basic Et 2 S decreases the Lewis acidity of the metal oxide sites, enhancing the basicity of the decorated interface. XPS measurements indicate a change in binding energy (BE) of the metal and oxygen centers. The observed changes in conductometric response do not represent a simple increase in surface acidity or basicity but

  11. Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

    Energy Technology Data Exchange (ETDEWEB)

    Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena; Roccaforte, Fabrizio [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona Industriale 95121 Catania (Italy)

    2016-07-04

    This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{sup 11} cm{sup −2}).

  12. [Scanning electron microscopy observation of the growth of osteoblasts on Ti-24Nb-4Zr-8Sn modified by micro-arc oxidation and alkali-heat treatment and implant-bone interface].

    Science.gov (United States)

    Han, Xue; Liu, Hong-Chen; Wang, Dong-Sheng; Li, Shu-Jun; Yang, Rui

    2011-01-01

    To observe the efficacy of micro-arc oxidation and alkali-heat treatment (MAH) on Ti-24Nb-4Zr-8Sn (Ti2448). Disks (diameter of 14.5 mm, thickness of 1 mm) and cylinders (diameter of 3 mm, height of 10 mm) were fabricated from Ti2448 alloy. Samples were divided into three groups: polished (Ti2448), micro-arc oxidation(MAO-Ti2448), micro-arc oxidation and alkali-heat treatment (MAH-Ti2448). MC3T3-E1 osteoblastic cells were cultured on the disks and cell morphology was observed with scanning electron microscopy (SEM) aftre 3 days. The cylinder samples were implanted in the tibia of dogs and implant-bone interface was observed with SEM after 3 months. A rough and porous structure was shown in both MAO and MAH group. The MC3T3-E1 cells on the MAH-Ti2448 discs spread fully in intimate contact with the underlying coarse surface through active cytoskeletal extentions. Osseointegration was formed in the implant-bone interface in MAH samples. MAH treatment can provide a more advantageous Ti2448 surface to osteoblastic cells than MAO treatment does, and the former can improve the implant-bone integration.

  13. Enhancement of the interface in poly(L-lactide) and poly(propylidene carbonate) blends by introducing of poly(L-lactide)-grafted graphene oxide to improve mechanical properties

    Science.gov (United States)

    Li, Qi; Qin, Shengxue; Tian, Xiujuan; Chen, Xueyang; Chen, Yunlei; Niu, Yanhua; Zhao, Lifen

    2018-03-01

    Enhancement of the interfacial structure has great significances in achieving polymer blends with high mechanical performance. To improve the mechanical properties of poly(L-lactide) (PLLA)/poly(propylidene carbonate) (PPC) blends, the covalent functionalized graphene oxide by PLLA chains (PLLA-g-GO) was synthesized by a two-step strategy. It could migrate from the thermally preferred PPC phase to the interfaces of PLLA and PPC and promote the formation of a network-like structure. As a consequence, the tensile strength and elongation at break were both improved. Furthermore, the PLLA-g-GO located at the interface could induce the crystallization at the boundary, which brought the significant improvement of the tensile strength and elongation at break. This result may be beneficial for designing high-performance PLLA materials.

  14. Voronoi Diagrams Without Bounding Boxes

    Science.gov (United States)

    Sang, E. T. K.

    2015-10-01

    We present a technique for presenting geographic data in Voronoi diagrams without having to specify a bounding box. The method restricts Voronoi cells to points within a user-defined distance of the data points. The mathematical foundation of the approach is presented as well. The cell clipping method is particularly useful for presenting geographic data that is spread in an irregular way over a map, as for example the Dutch dialect data displayed in Figure 2. The automatic generation of reasonable cell boundaries also makes redundant a frequently used solution to this problem that requires data owners to specify region boundaries, as in Goebl (2010) and Nerbonne et al (2011).

  15. Microprocessor interfacing

    CERN Document Server

    Vears, R E

    2014-01-01

    Microprocessor Interfacing provides the coverage of the Business and Technician Education Council level NIII unit in Microprocessor Interfacing (syllabus U86/335). Composed of seven chapters, the book explains the foundation in microprocessor interfacing techniques in hardware and software that can be used for problem identification and solving. The book focuses on the 6502, Z80, and 6800/02 microprocessor families. The technique starts with signal conditioning, filtering, and cleaning before the signal can be processed. The signal conversion, from analog to digital or vice versa, is expl

  16. Interface Anywhere

    Data.gov (United States)

    National Aeronautics and Space Administration — Current paradigms for crew interfaces to the systems that require control are constrained by decades old technologies which require the crew to be physically near an...

  17. Introduction to the Box Particle Filtering

    OpenAIRE

    Gning, Amadou; Ristic, B; Mihaylova, Lyudmila; Abdallah, F.

    2013-01-01

    This paper presents a novel method for solving nonlinear filtering problems. This approach is particularly appealing in practical situations involving imprecise stochastic measurements, thus resulting in very broad posterior densities. It relies on the concept of a box particle, which occupies a small and controllable rectangular region having a non-zero volume in the state space. Key advantages of the box particle filter (Box-PF) against the standard particle filter (PF) are in its reduced c...

  18. Two particle states in an asymmetric box

    OpenAIRE

    Li, Xin; Liu, Chuan

    2004-01-01

    The exact two-particle energy eigenstates in an asymmetric rectangular box with periodic boundary conditions in all three directions are studied. Their relation with the elastic scattering phases of the two particles in the continuum are obtained. These results can be viewed as a generalization of the corresponding formulae in a cubic box obtained by L\\"uscher before. In particular, the s-wave scattering length is related to the energy shift in the finite box. Possible applications of these f...

  19. The three-box paradox revisited

    International Nuclear Information System (INIS)

    Ravon, Tamar; Vaidman, Lev

    2007-01-01

    The classical three-box paradox of Kirkpatrick (2003 J. Phys. A: Math. Gen. 36 4891) is compared to the original quantum three-box paradox of Aharonov and Vaidman (1991 J. Phys. A: Math. Gen. 24 2315). It is argued that the quantum three-box experiment is a 'quantum paradox' in the sense that it is an example of a classical task which cannot be accomplished using classical means, but can be accomplished using quantum devices. It is shown that Kirkpatrick's card game is analogous to a different game with a particle in three boxes which does not contain paradoxical features

  20. Dimension measuring method for channel box

    International Nuclear Information System (INIS)

    Jo, Hiroto.

    1995-01-01

    The device of the present invention concerns detection of a channel box for spent fuel assemblies of a BWR type reactor, which measures a cross sectional shape and dimension of the channel box to check deformation amount such as expansion. That is, a customary fuel exchanger and a dimension measuring device are used. The lower end of the channel box is measured by a distance sensor of the dimension measuring device when it is aligned with a position of the distance sensor. The channel box is lowered at the same time while detecting axial position data of the fuel exchanger. The position of the channel box in an axial direction is detected based on axial position data of the fuel exchanger. The lower end of the channel box can accurately be recognized by the detection of both of them. Subsequent deformation measurement for the channel box at accurate axial positions is enabled. In addition, since the axial position data of the fuel exchanger per se are detected, an axial profile of the channel box can be measured even if a lifting speed of the channel box is varied on every region. (I.S.)

  1. Repackaging SRS Black Box TRU Waste

    International Nuclear Information System (INIS)

    Swale, D. J.; Stone, K.A.; Milner, T. N.

    2006-01-01

    Historically, large items of TRU Waste, which were too large to be packaged in drums for disposal have been packaged in various sizes of custom made plywood boxes at the Savannah River Site (SRS), for many years. These boxes were subsequently packaged into large steel ''Black Boxes'' for storage at SRS, pending availability of Characterization and Certification capability, to facilitate disposal of larger items of TRU Waste. There are approximately 107 Black Boxes in inventory at SRS, each measuring some 18' x 12' x 7', and weighing up to 45,000 lbs. These Black Boxes have been stored since the early 1980s. The project to repackage this waste into Standard Large Boxes (SLBs), Standard Waste Boxes (SWB) and Ten Drum Overpacks (TDOP), for subsequent characterization and WIPP disposal, commenced in FY04. To date, 10 Black Boxes have been repackaged, resulting in 40 SLB-2's, and 37 B25 overpack boxes, these B25's will be overpacked in SLB-2's prior to shipping to WIPP. This paper will describe experience to date from this project

  2. In situ atomic-level observation of the formation of platinum silicide at platinum-silicon oxide interfaces under electron irradiation

    Directory of Open Access Journals (Sweden)

    Takeshi Nagase

    2018-05-01

    Full Text Available In situ atomic-level observation of the formation of Pt2Si at Pt/SiOx interface by electronic excitation under electron irradiation was performed by using scanning transmission electron microscopy. Scanning of an electron-beam probe stimulates silicide formation at the Pt/SiOx interface; the change in the Pt column corresponding to Pt2Si formation with a crystallographic orientation of (001Pt//(001Pt2Si and [110]Pt//[110]Pt2Si was observed in high-angle annular dark-field images.

  3. VO₂ requirements of boxing exercises.

    Science.gov (United States)

    Arseneau, Eric; Mekary, Saïd; Léger, Luc A

    2011-02-01

    The purpose of this study was to quantify the physiological requirements of various boxing exercises such as sparring, pad work, and punching bag. Because it was not possible to measure the oxygen uptake (VO₂) of "true" sparring with a collecting gas valve in the face, we developed and validated a method to measure VO₂ of "true" sparring based on "postexercise" measurements. Nine experienced male amateur boxers (Mean ± SD: age = 22.0 ± 3.5 years, height = 176.0 ± 8.0 cm, weight = 71.4 ± 10.9 kg, number of fights = 13.0 ± 9.5) of regional and provincial level volunteered to participate in 3 testing sessions: (a) maximal treadmill test in the LAB, (b) standardized boxing training in the GYM, and (c) standardized boxing exercises in the LAB. Measures of VO₂, heart rate (HR), blood lactate concentration [LA], rated perceived exertion level, and punching frequencies were collected. VO₂ values of 43.4 ± 5.9, 41.1 ± 5.1, 24.7 ± 6.1, 30.4 ± 5.8, and 38.3 ± 6.5 ml·kg⁻¹·min⁻¹ were obtained, which represent 69.7 ± 8.0, 66.1 ± 8.0, 39.8 ± 10.4, 48.8 ± 8.5, and 61.7 ± 10.3%VO₂peak for sparring, pad work, and punching bag at 60, 120, and 180 b·min⁻¹, respectively. Except for lower VO₂ values for punching the bag at 60 and 120 b·min⁻¹ (p < 0.05), there was no VO₂ difference between exercises. Similar pattern was obtained for %HRmax with respective values of 85.5 ± 5.9, 83.6 ± 6.3, 67.5 ± 3.5, 74.8 ± 5.9, and 83.0 ± 6.0. Finally, sparring %HRmax and [LA] were slightly higher in the GYM (91.7 ± 4.3 and 9.4 ± 2.2 mmol·L⁻¹) vs. LAB (85.5 ± 5.9 and 6.1 ± 2.3 mmol·L⁻¹). Thus, in this study simulated LAB sparring and pad work required similar VO₂ (43-41 ml·kg⁻¹·min⁻¹, respectively), which corresponds to ~70%VO₂peak. These results underline the importance of a minimum of aerobic fitness for boxers and draw some guidelines for the intensity of training.

  4. Computer interfacing

    CERN Document Server

    Dixey, Graham

    1994-01-01

    This book explains how computers interact with the world around them and therefore how to make them a useful tool. Topics covered include descriptions of all the components that make up a computer, principles of data exchange, interaction with peripherals, serial communication, input devices, recording methods, computer-controlled motors, and printers.In an informative and straightforward manner, Graham Dixey describes how to turn what might seem an incomprehensible 'black box' PC into a powerful and enjoyable tool that can help you in all areas of your work and leisure. With plenty of handy

  5. IMPROVED, FAVORABLE FOR ENVIRONMENT POLYURETHANE COLD-BOX-PROCESS (COLD BOX «HUTTENES-ALBERTUS» .

    Directory of Open Access Journals (Sweden)

    A. Sergini

    2005-01-01

    Full Text Available The results of the laboratory and industrial investigations, the purpose of which is improvement of the classical Cold-box-process, i.e. the process of the slugs hardening in cold boxes, are presented.

  6. Technology as the Crayon Box.

    Science.gov (United States)

    Garcia, Lilia

    2000-01-01

    While arts facilities should be equipped with computers, color scanners, MIDI (Musical Instrument Digital Interface) labs, connective video cameras, and appropriate software, music rooms still need pianos and visual art rooms need traditional art supplies. Dade County (Florida) Schools's pilot teacher assistance projects and arts-centered schools…

  7. Evaluation of decontamination during dismantling of plutonium-contaminated glove boxes

    International Nuclear Information System (INIS)

    Kinugasa, Manabu; Taguchi, Seigi; Ohzeki, Satoru; Inoue, Yoshiaki; Kashima, Sadamitsu

    1981-01-01

    The dismantling work of plutonium-contaminated glove boxes was carried out. These glove boxes had been used for the R and D of plutonium-uranium mixed oxide fuel for 15 years. The work was carried out in a pressure-controlled greenhouse, and the contamination of air in the greenhouse was monitored continuously. In order to reduce the contamination of air during dismantling, the decontamination and fixation of loose contaminants on the surfaces of glove boxes were very important. The correlation between decontamination and the contamination of air regarding dismantling is reported in this paper. The surface contamination density of the glove boxes was measured utilizing the smear method before and after the decontamination, and the decontamination effects were estimated. The contamination of air during dismantling was continuously measured with a plutonium dust monitor. It was found that loose contamination exponentially decreased by the decontamination process. When the so-called wet glove boxes, which contained wet recovery and waste disposal apparatus, were dismantled, the contamination of air did not exceed 500 (MPC) a. However, the contamination of air exceeded 500 (MPC) a several times in the present work of dismantling the so-called dry glove boxes which had been used for the fabrication of plutonium-uranium mixed oxide pellets. (Kato, T.)

  8. VORONOI DIAGRAMS WITHOUT BOUNDING BOXES

    Directory of Open Access Journals (Sweden)

    E. T. K. Sang

    2015-10-01

    Full Text Available We present a technique for presenting geographic data in Voronoi diagrams without having to specify a bounding box. The method restricts Voronoi cells to points within a user-defined distance of the data points. The mathematical foundation of the approach is presented as well. The cell clipping method is particularly useful for presenting geographic data that is spread in an irregular way over a map, as for example the Dutch dialect data displayed in Figure 2. The automatic generation of reasonable cell boundaries also makes redundant a frequently used solution to this problem that requires data owners to specify region boundaries, as in Goebl (2010 and Nerbonne et al (2011.

  9. Structure and nature of the metal-support interface: characterization of iridium clusters on magnesium oxide by extended x-ray absorption fine structure spectroscopy

    NARCIS (Netherlands)

    Zon, van F.B.M.; Maloney, S.D.; Gates, B.C.; Koningsberger, D.C.

    1993-01-01

    X-ray absorption spectroscopy was used to characterize the metal-support interface in catalysts consisting of very small Ir clusters of nearly uniform nuclearity on the surface of MgO powder. [Ir4(CO)12] on MgO was converted in high yield into [HIr4(CO)11]- and sep. into [Ir6(CO)15]2-. EXAFS data

  10. Preparation of liquid-core nanocapsules from poly[(ethylene oxide)-co-glycidol] with multiple hydrophobic linoleates at an oil-water interface and its encapsulation of pyrene.

    Science.gov (United States)

    Ren, Yong; Wang, Guowei; Huang, Junlian

    2007-06-01

    A convenient approach is provided to prepare liquid-core nanocapsules by cross-linking an amphiphilic copolymer at an oil-water interface. The hydrophilic copolymer poly[(ethylene oxide)-co-glycidol] was prepared by anionic polymerization of ethylene oxide and ethoxyethyl glycidyl ether first, then the hydroxyl groups on the backbone were recovered after hydrolysis and partly modified by hydrophobic conjugated linoleic acid. The copolymer with multiple linoleate pendants was absorbed at an oil-water interface and then cross-linked to form stable nanocapsules. The mean diameter of the nanocapsule was below 350 nm, and the size distribution was relatively narrow (<0.2) at low concentrations of oil in acetone (<10 mg/mL). The particle size could be tuned easily by variation of the emulsification conditions. The nanocapsule was stable in water for at least 5 months, and the shell maintained its integrity after removal of the oily core by solvent. Pyrene was encapsulated in these nanocapsules, and a loading efficiency as high as 94% was measured by UV spectroscopy.

  11. Effects of BOX engineering on analogue/RF and circuit performance of InGaAs-OI-Si MOSFET

    Science.gov (United States)

    Maity, Subir Kr.; Pandit, Soumya

    2017-11-01

    InGaAs is an attractive choice as alternate channel material in n-channel metal oxide semiconductor transistor for high-performance applications. However, electrostatic integrity of such device is poor. In this paper, we present a comprehensive technology computer-aided design simulation-based study of the effect of scaling the thickness of the buried oxide (BOX) region and varying the dielectric constant of BOX material on the electrostatic integrity, analogue/radio frequency (RF) performance and circuit performance of InGaAs-on-Insulator device. Device with thin BOX layer gives better drain-induced barrier lowering performance which enhances output resistance. The carrier mobility remains almost constant with thinning of BOX layer up to certain value. By lowering the dielectric constant of the BOX material, it is further possible to improve the analogue and RF performance. Effect of BOX thickness scaling and role of BOX dielectric material on gain-frequency response of common source amplifier is also studied. It is observed that frequency response of the amplifier improves for thin BOX and with low dielectric constant-based material.

  12. Designing Interfaces

    CERN Document Server

    Tidwell, Jenifer

    2010-01-01

    Despite all of the UI toolkits available today, it's still not easy to design good application interfaces. This bestselling book is one of the few reliable sources to help you navigate through the maze of design options. By capturing UI best practices and reusable ideas as design patterns, Designing Interfaces provides solutions to common design problems that you can tailor to the situation at hand. This updated edition includes patterns for mobile apps and social media, as well as web applications and desktop software. Each pattern contains full-color examples and practical design advice th

  13. Electrical requirements for unshielded glove boxes

    International Nuclear Information System (INIS)

    1978-02-01

    The specification relates to the general design and installation of electrical services required in unshielded glove boxes in which atmospheres of air, argon or nitrogen etc. may exist either temporarily or permanently. The specification does not apply to electrical services for glove boxes with flammable explosive atmospheres. (author)

  14. British Box Business: A History of OCL

    DEFF Research Database (Denmark)

    Poulsen, René Taudal

    2018-01-01

    Book review of British Box Business: A History of OCL / edited by A. Bott SCARA, Goldaming, 2009, £17 (hb) 288 pages, illustrations, bibliography, index iSBn 139780955922701......Book review of British Box Business: A History of OCL / edited by A. Bott SCARA, Goldaming, 2009, £17 (hb) 288 pages, illustrations, bibliography, index iSBn 139780955922701...

  15. Box Plots in the Australian Curriculum

    Science.gov (United States)

    Watson, Jane M.

    2012-01-01

    This article compares the definition of "box plot" as used in the "Australian Curriculum: Mathematics" with other definitions used in the education community; describes the difficulties students experience when dealing with box plots; and discusses the elaboration that is necessary to enable teachers to develop the knowledge…

  16. Opportunities in white-box cryptography

    NARCIS (Netherlands)

    Michiels, W.

    White-box cryptography is the discipline of implementing a cryptographic algorithm in software such that an adversary will have difficulty extracting the cryptographic key. This approach assumes that the adversary has full access to and full control over the implementation's execution. White-box

  17. Modern biotechnology Panacea or new Pandora's box?

    NARCIS (Netherlands)

    Tramper, J.; Yang Zhu, Yang

    2011-01-01

    According to Greek mythology Pandora was sent down to earth upon the orders of Zeus. She was given a mysterious box which she was not allowed to open. However, Pandora was very curious and when she arrived on earth she couldn?t help taking a peek inside the box. She saw that it was filled with gifts

  18. DISTORTION ANALYSIS OF TILL -WALLED BOX GIRDERS

    African Journals Online (AJOL)

    NIJOTECH

    bridges, buildings, motor vehicles, ships and aircrafts. Due to thinness of the box walls, generalized loads applied to this structure give rise to warping and distortion of ..... Recommendation for Design of. Intermediate Diaphragms in Box. Girders, Transactions of Japanese. Society of Civil Engineers, Vol. 14,1984, pp 121-126.

  19. Magnetorotational Dynamo Action in the Shearing Box

    Science.gov (United States)

    Walker, Justin; Boldyrev, Stanislav

    2017-10-01

    Magnetic dynamo action caused by the magnetorotational instability is studied in the shearing-box approximation with no imposed net magnetic flux. Consistent with recent studies, the dynamo action is found to be sensitive to the aspect ratio of the box: it is much easier to obtain in tall boxes (stretched in the direction normal to the disk plane) than in long boxes (stretched in the radial direction). Our direct numerical simulations indicate that the dynamo is possible in both cases, given a large enough magnetic Reynolds number. To explain the relatively larger effort required to obtain the dynamo action in a long box, we propose that the turbulent eddies caused by the instability most efficiently fold and mix the magnetic field lines in the radial direction. As a result, in the long box the scale of the generated strong azimuthal (stream-wise directed) magnetic field is always comparable to the scale of the turbulent eddies. In contrast, in the tall box the azimuthal magnetic flux spreads in the vertical direction over a distance exceeding the scale of the turbulent eddies. As a result, different vertical sections of the tall box are permeated by large-scale nonzero azimuthal magnetic fluxes, facilitating the instability. NSF AGS-1261659, Vilas Associates Award, NSF-Teragrid Project TG-PHY110016.

  20. Cosmetic Foot Surgery: Fashion's Pandora's Box

    Science.gov (United States)

    ... Fashion’s Pandora’s Box? A A A | Print | Share Cosmetic Foot Surgery: Fashion’s Pandora’s Box? Foot and ankle ... extreme and imprudent as it may sound, the cosmetic surgery craze is not just for faces anymore— ...

  1. Boxing Injuries from an Instructional Program.

    Science.gov (United States)

    Welch, Michael J.; And Others

    1986-01-01

    This paper describes the safeguards as well as the injury pattern of the boxing program at the US Military Academy at West Point from 1983 to 1985. About 2,100 cadets received boxing instruction during this period with an injury rate of less than four percent. (Author/MT)

  2. Boxing against drones : Drones in sports education

    NARCIS (Netherlands)

    Zwaan, S.G.; Barakova, E.I.

    2016-01-01

    This paper investigates how drones could be integrated into the context of sports, boxing in particular. The goal of this project is to design a drone application that allows direct and embodied interaction. The sport of boxing provides a very interesting setting, because the intimidating and

  3. Examination of a Junction-Box Adhesion Test for Use in Photovoltaic Module Qualification: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Miller, D. C.; Wohlgemuth, J. H.

    2012-08-01

    Engineering robust adhesion of the junction-box (j-box) is a hurdle typically encountered by photovoltaic (PV) module manufacturers during product development. There are historical incidences of adverse effects (e.g., fires) caused when the j-box/adhesive/module system has failed in the field. The addition of a weight to the j-box during the 'damp heat' IEC qualification test is proposed to verify the basic robustness of its adhesion system. The details of the proposed test will be described, in addition to the preliminary results obtained using representative materials and components. The described discovery experiments examine moisture-cured silicone, foam tape, and hot-melt adhesives used in conjunction with PET or glass module 'substrates.' To be able to interpret the results, a set of material-level characterizations was performed, including thermogravimetric analysis, differential scanning calorimetry, and dynamic mechanical analysis. PV j-boxes were adhered to a substrate, loaded with a prescribed weight, and then placed inside an environmental chamber (at 85C, 85% relative humidity). Some systems did not remain attached through the discovery experiments. Observed failure modes include delamination (at the j-box/adhesive or adhesive/substrate interface) and phase change/creep. The results are discussed in the context of the application requirements, in addition to the plan for the formal experiment supporting the proposed modification to the qualification test.

  4. Applications of a glove-box ICP-MS for the analysis of nuclear materials

    International Nuclear Information System (INIS)

    Garcia Alonso, J.I.; Babelot, J.F.; Glatz, J.P.; Cromboom, O.; Koch, L.

    1993-01-01

    The relatively new analytical technique, Inductively Coupled Plasma Mass Spectrometry (ICP-MS), has been used for the analysis of nuclear materials stemming from different parts of the nuclear fuel cycle. The original instrument has been modified in order to work with radioactive materials in a glove box. The plasma torch and vacuum interface are situated inside the glove box while the mass spectrometer and associated electronics are outside. Samples analysed include fresh nuclear fuels (natural impurities), spent fuels (fission products and actinides), reprocessing solutions (minor actinides) and leachates of spent fuel and high level waste glasses (natural elements, fission products and actinides). (orig.)

  5. 49 CFR 178.515 - Standards for reconstituted wood boxes.

    Science.gov (United States)

    2010-10-01

    ... wood boxes. (a) The identification code for a reconstituted wood box is 4F. (b) Construction requirements for reconstituted wood boxes are as follows: (1) The walls of boxes must be made of water... 49 Transportation 2 2010-10-01 2010-10-01 false Standards for reconstituted wood boxes. 178.515...

  6. North American box turtles: A natural history

    Science.gov (United States)

    Dodd, C. Kenneth

    2002-01-01

    Once a familiar backyard visitor in many parts of the United States and Mexico, the box turtle is losing the battle against extinction. In North American Box Turtles, C. Kenneth Dodd, Jr., has written the first book-length natural history of the twelve species and subspecies of this endangered animal. This volume includes comprehensive information on the species’ evolution, behavior, courtship and reproduction, habitat use, diet, population structure, systematics, and disease. Special features include color photos of all species, subspecies, and their habitats; a simple identification guide to both living and fossil species; and a summary of information on fossil Terrapene and Native uses of box turtles. End-of-chapter sections highlight future research directions, including the need for long-term monitoring and observation of box turtles within their natural habitat and conservation applications. A glossary and a bibliography of literature on box turtles accompany the text.

  7. Dustproof cooling of the electrical box

    Directory of Open Access Journals (Sweden)

    Nemec Patrik

    2018-01-01

    Full Text Available In present are electrical boxes cooled by air through the intake hole on the bottom electrical box to the box space with electrotechnical elements and exhaust through the hole at the top to the surrounding by natural convection. This cooling method is effective but operate with the risk of contamination electrotechnical elements by dust sucking from surrounding air. The goal of this work is solution of the dustproof cooling of the electrical box by natural convection. The work deal with design of the device with the heat transfer by the phase change of the working fluid and experimental measuring its thermal performance at the cooling electrotechnical elements loaded by heat 1 200 W in the dustproof electrical box.

  8. Interface unit

    NARCIS (Netherlands)

    Keyson, D.V.; Freudenthal, A.; De Hoogh, M.P.A.; Dekoven, E.A.M.

    2001-01-01

    The invention relates to an interface unit comprising at least a display unit for communication with a user, which is designed for being coupled with a control unit for at least one or more parameters in a living or working environment, such as the temperature setting in a house, which control unit

  9. Asymmetric diffusion of Zr, Sc and Ce, Gd at the interface between zirconia electrolyte and ceria interlayer for solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Bo, E-mail: Liangbo@gdut.edu.cn; Tao, Tao; Zhang, Silong; Huang, Yongan; Cai, Zhihong; Lu, Shenguo, E-mail: sglu@gdut.edu.cn

    2016-09-15

    The microstructures of cathode interlayer and elemental diffusion behaviors across the interfacial region (electrolyte/interlayer) have been characterized using high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and scanning TEM combined with energy dispersive X-ray spectroscopy (STEM-EDS). A densified film about 100 nm is locally formed at the interface of electrolyte/interlayer as the interlayer using dip-coating method and being sintered at 1200 °C. It is observed that the compositional distribution curves across the interface are asymmetric. More amount of the Zr, Sc component is detected in gadolinium-doped ceria (GDC) than that of the Ce, Gd component is detected in scandia-stabilized-zirconia (SSZ). XRD and EDS results show that the densified layer might consist of (Zr, Ce)O{sub 2}-based solid solution. The high open circuit voltage of the cell is related to the dense structure of electrolyte, while the increased activation energy in overpotential resistance is attributed to the porous structure of interlayer as well as the high resistance phases locally formed at its interface. - Highlights: • The (Ce−Zr)O{sub 2} based solid solution was locally formed at 1200 °C. • More Zr, Sc elements were detected in GDC than Ce, Gd elements in SSZ. • Zirconia nanodomain was embedded in GDC beside grain boundary. • High OCVs were achieved due to the highly dense electrolyte layer.

  10. Interface superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Gariglio, S., E-mail: stefano.gariglio@unige.ch [DQMP, Université de Genève, 24 Quai E.-Ansermet, CH-1211 Genève (Switzerland); Gabay, M. [Laboratoire de Physique des Solides, Bat 510, Université Paris-Sud 11, Centre d’Orsay, 91405 Orsay Cedex (France); Mannhart, J. [Max Planck Institute for Solid State Research, 70569 Stuttgart (Germany); Triscone, J.-M. [DQMP, Université de Genève, 24 Quai E.-Ansermet, CH-1211 Genève (Switzerland)

    2015-07-15

    Highlights: • We discuss interfacial superconductivity, a field boosted by the discovery of the superconducting interface between LaAlO. • This system allows the electric field control and the on/off switching of the superconducting state. • We compare superconductivity at the interface and in bulk doped SrTiO. • We discuss the role of the interfacially induced Rashba type spin–orbit. • We briefly discuss superconductivity in cuprates, in electrical double layer transistor field effect experiments. • Recent observations of a high T{sub c} in a monolayer of FeSe deposited on SrTiO{sub 3} are presented. - Abstract: Low dimensional superconducting systems have been the subject of numerous studies for many years. In this article, we focus our attention on interfacial superconductivity, a field that has been boosted by the discovery of superconductivity at the interface between the two band insulators LaAlO{sub 3} and SrTiO{sub 3}. We explore the properties of this amazing system that allows the electric field control and on/off switching of superconductivity. We discuss the similarities and differences between bulk doped SrTiO{sub 3} and the interface system and the possible role of the interfacially induced Rashba type spin–orbit. We also, more briefly, discuss interface superconductivity in cuprates, in electrical double layer transistor field effect experiments, and the recent observation of a high T{sub c} in a monolayer of FeSe deposited on SrTiO{sub 3}.

  11. The ocular complications of boxing.

    Science.gov (United States)

    Giovinazzo, V J; Yannuzzi, L A; Sorenson, J A; Delrowe, D J; Cambell, E A

    1987-06-01

    In cooperation with the New York State Athletic Commission, 74 boxers applying for a new or yearly renewal license were sequentially referred over a 2-year period for a complete dilated ocular examination at the Sports Vision Institute of the Manhattan Eye, Ear and Throat Hospital. At least one ocular injury was found in 66% of boxers. Vision-threatening injuries, defined as significant damage to the angle, lens, macula, or peripheral retina occurred in 58% of boxers. Nineteen percent of boxers had angle abnormalities. Nineteen percent of boxers had pathologic cataracts, over 70% of these were posterior subcapsular. Six boxers had macular lesions. A total of 24% of boxers had retinal tears. Standardized photographs were used to distinguish pathologic cataracts from congenital opacities and pathologic retinal tears from atrophic holes. Attempts were made to identify risk factors in boxing that might be predictive for ocular injury. Variables included age, weight division, left- or right-handedness, total number of losses, and total number of bouts. Significant correlations were found between the total number of bouts and the total number of losses, and the presence of retinal tears. College varsity athletes were selected as controls. Significant differences were found between boxers and controls for the total number of injuries, total vision-threatening injuries, and the number of retinal tears. A series of recommendations are proposed to aide in the early detection and prevention of serious ocular injuries.

  12. Design report for shielded glove box

    International Nuclear Information System (INIS)

    Ku, J. H.; Lee, J. C.; Seo, K. S.; Bang, K. S.; Lee, D. W.; Kim, J. H.; Min, D. K.; Park, S. W.

    1999-05-01

    For the examination of spent fuels and high radioactive specimens using a specially equipped scanning electron microscope, a shielded glove box was designed and constructed at PIE facility of KAERI. This glove box consisted of shielding walls, containment box, lead glasses, manipulators, gloves, ventilation systems, doors, hot-cell specimen cask adapter, etc. It was emphasized that both the easy operation and radiation safety are important factors in the shielded glove box were installed also considered as a important factor to build the basic concept of the assembling. Two sliding doors and one hinge-type door were installed for the easy installation, operation and maintenance of scanning electron microscope. Containment box which confines the radioactive material into the box consisted of reinforced transparent glasses, aluminum frames and stainless steel plate liner. Therefore everything beyond the containment box can be seen through the lead glass which installed at the front shielding wall. All shielding walls and doors were introduced separately into the room and assembled by bolting. (author). 3 refs., 5 tabs., 18 figs

  13. The role of extra-atomic relaxation in determining Si2p binding energy shifts at silicon/silicon oxide interfaces

    International Nuclear Information System (INIS)

    Zhang, K.Z.; Greeley, J.N.; Banaszak Holl, M.M.; McFeely, F.R.

    1997-01-01

    The observed binding energy shift for silicon oxide films grown on crystalline silicon varies as a function of film thickness. The physical basis of this shift has previously been ascribed to a variety of initial state effects (Si endash O ring size, strain, stoichiometry, and crystallinity), final state effects (a variety of screening mechanisms), and extrinsic effects (charging). By constructing a structurally homogeneous silicon oxide film on silicon, initial state effects have been minimized and the magnitude of final state stabilization as a function of film thickness has been directly measured. In addition, questions regarding the charging of thin silicon oxide films on silicon have been addressed. From these studies, it is concluded that initial state effects play a negligible role in the thickness-dependent binding energy shift. For the first ∼30 Angstrom of oxide film, the thickness-dependent binding energy shift can be attributed to final state effects in the form of image charge induced stabilization. Beyond about 30 Angstrom, charging of the film occurs. copyright 1997 American Institute of Physics

  14. Adsorption and desorption behavior of zinc oxide nanoparticles at the soil-water interface using standardized soil LUFA 2.2 and 2.3

    DEFF Research Database (Denmark)

    Skjolding, Lars Michael; Winther-Nielsen, Margrethe; Baun, Anders

    The use of engineered nanomaterials (ENM) is increasing. Especially, zinc oxide nanoparticles (ZnO NP) are now widely used in a range of consumer goods e.g. car tires, sunscreens and catalysts for various processes. The increasing use will inevitably result in ENM being released to the environment...

  15. Controlled Oxygen Chemisorption on an Alumina Supported Rhodium Catalyst. The Formation of a New Metal-Metal Oxide Interface Determined with EXAFS.

    NARCIS (Netherlands)

    Koningsberger, D.C.; Martens, J.H.A.; Prins, R.

    1989-01-01

    An alumina-supported rhodium catalyst has been studied with EXAFS. After reduction and evacuation, oxygen was admitted at 100 and 300 K. EXAFS spectra of the catalyst after oxygen admission at 100 K indicated the beginning of oxidation. At 300 K only a small part of the rhodium particles remained

  16. Interface control scheme for computer high-speed interface unit

    Science.gov (United States)

    Ballard, B. K.

    1975-01-01

    Control scheme is general and performs for multiplexed and dedicated channels as well as for data-bus interfaces. Control comprises two 64-pin, dual in-line packages, each of which holds custom large-scale integrated array built with silicon-on-sapphire complementary metal-oxide semiconductor technology.

  17. Role of melt behavior in modifying oxidation distribution using an interface incorporated model in selective laser melting of aluminum-based material

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Dongdong, E-mail: dongdonggu@nuaa.edu.cn; Dai, Donghua [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016 (China); Institute of Additive Manufacturing (3D Printing), Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016 (China)

    2016-08-28

    A transient three dimensional model for describing the molten pool dynamics and the response of oxidation film evolution in the selective laser melting of aluminum-based material is proposed. The physical difference in both sides of the scan track, powder-solid transformation and temperature dependent physical properties are taken into account. It shows that the heat energy tends to accumulate in the powder material rather than in the as-fabricated part, leading to the formation of the asymmetrical patterns of the temperature contour and the attendant larger dimensions of the molten pool in the powder phase. As a higher volumetric energy density is applied (≥1300 J/mm{sup 3}), a severe evaporation is produced with the upward direction of velocity vector in the irradiated powder region while a restricted operating temperature is obtained in the as-fabricated part. The velocity vector continuously changes from upward direction to the downward one as the scan speed increases from 100 mm/s to 300 mm/s, promoting the generation of the debris of the oxidation films and the resultant homogeneous distribution state in the matrix. For the applied hatch spacing of 50 μm, a restricted remelting phenomenon of the as-fabricated part is produced with the upward direction of the convection flow, significantly reducing the turbulence of the thermal-capillary convection on the breaking of the oxidation films, and therefore, the connected oxidation films through the neighboring layers are typically formed. The morphology and distribution of the oxidation are experimentally acquired, which are in a good agreement with the results predicted by simulation.

  18. Interface learning

    DEFF Research Database (Denmark)

    Thorhauge, Sally

    2014-01-01

    "Interface learning - New goals for museum and upper secondary school collaboration" investigates and analyzes the learning that takes place when museums and upper secondary schools in Denmark work together in local partnerships to develop and carry out school-related, museum-based coursework...... for students. The research focuses on the learning that the students experience in the interface of the two learning environments: The formal learning environment of the upper secondary school and the informal learning environment of the museum. Focus is also on the learning that the teachers and museum...... professionals experience as a result of their collaboration. The dissertation demonstrates how a given partnership’s collaboration affects the students’ learning experiences when they are doing the coursework. The dissertation presents findings that museum-school partnerships can use in order to develop...

  19. Experimental investigation of interface conditions between oxidic melt and ablating concrete during MCCI by means of simulating material experiments: the Artemis program

    Energy Technology Data Exchange (ETDEWEB)

    Veteau, J.M. [Commissariat a l' Energie Atomique, DEN/DTN/SE2T/LPTM, 17 rue des Martyrs 38 - Grenoble cedex 9 (France)

    2005-07-01

    Full text of publication follows: In the frame work of R and D on Severe Accidents in PWR plants, an estimation by codes of time of basemat melt-through by Corium is required. For this, the heat flux distribution along the cavity wall must be properly modelled. Hence the knowledge of the heat transfer coefficient as well as the temperature at the interface between the melt and the solid become key issues. Phase diagram of the melt and composition governs the interface temperature which controls, at least partly, the thickness of the Corium crust formed on the molten concrete. Crust behaviour (time evolution of thickness, mechanical interaction with gas) implies a release mode of molten concrete in Corium which in turn alters the melt composition. Clearly, the molten corium-concrete interaction (MCCI) phenomenon is the result of a strong coupling between physico-chemistry and thermohydraulics. The main goal of the first test series of the Artemis program is to make a link between the interface temperature and the physico-chemistry of the melt (phase diagram) through tests conducted with simulating materials and to provide an insight on the existence, the behaviour and the composition of the crust. This test series considers 1D MCCI using a non eutectic LiCl-BaCl{sub 2} mixture poured at 1000 deg. C in a cylindrical test section (internal diameter 0.3 m) to interact with the 0.35 m deep basemat made of the same salt mixture at the eutectic composition. This 'concrete' was especially manufactured with sintered granulates to allow gas flow from the bottom (argon), then simulating gas released by concrete in the reactor case. Constant power is applied in the pool with an helical coil and 1D MCCI is ensured by counterbalancing heat losses by controlled heating at the lateral walls and at the top of the test section. Concrete ablation is followed from the output of 45 0.5 mm diameter thermocouples. An instrumented rod periodically investigates the temperature

  20. Tuning the Two-Dimensional Electron Gas at Oxide Interfaces with Ti-O Configurations: Evidence from X-ray Photoelectron Spectroscopy

    DEFF Research Database (Denmark)

    Zhang, Yu; Gan, Yulin; Niu, Wei

    2018-01-01

    Chemical redox reaction can lead to a two-dimensional electron gas (2DEG) at the interface between a TiO2-terminated SrTiO3 (STO) substrate and an amorphous LaAlO3 (a-LAO) capping layer. When replacing the STO substrate with rutile and anatase TiO2 substrates, considerable differences...... in interfacial conduction are observed. Based on X-ray photoelectron spectroscopy (XPS) and transport measurements, we conclude that the interfacial conduction comes from redox reactions, and that the differences among the materials systems result mainly from variations in the activation energies...

  1. Experimental investigation of interface conditions between oxidic melt and ablating concrete during MCCI by means of simulating material experiments: the Artemis program

    International Nuclear Information System (INIS)

    Veteau, J.M.

    2005-01-01

    Full text of publication follows: In the frame work of R and D on Severe Accidents in PWR plants, an estimation by codes of time of basemat melt-through by Corium is required. For this, the heat flux distribution along the cavity wall must be properly modelled. Hence the knowledge of the heat transfer coefficient as well as the temperature at the interface between the melt and the solid become key issues. Phase diagram of the melt and composition governs the interface temperature which controls, at least partly, the thickness of the Corium crust formed on the molten concrete. Crust behaviour (time evolution of thickness, mechanical interaction with gas) implies a release mode of molten concrete in Corium which in turn alters the melt composition. Clearly, the molten corium-concrete interaction (MCCI) phenomenon is the result of a strong coupling between physico-chemistry and thermohydraulics. The main goal of the first test series of the Artemis program is to make a link between the interface temperature and the physico-chemistry of the melt (phase diagram) through tests conducted with simulating materials and to provide an insight on the existence, the behaviour and the composition of the crust. This test series considers 1D MCCI using a non eutectic LiCl-BaCl 2 mixture poured at 1000 deg. C in a cylindrical test section (internal diameter 0.3 m) to interact with the 0.35 m deep basemat made of the same salt mixture at the eutectic composition. This 'concrete' was especially manufactured with sintered granulates to allow gas flow from the bottom (argon), then simulating gas released by concrete in the reactor case. Constant power is applied in the pool with an helical coil and 1D MCCI is ensured by counterbalancing heat losses by controlled heating at the lateral walls and at the top of the test section. Concrete ablation is followed from the output of 45 0.5 mm diameter thermocouples. An instrumented rod periodically investigates the temperature and the position

  2. Two particle states in an asymmetric box

    International Nuclear Information System (INIS)

    Li Xin; Liu Chuan

    2004-01-01

    The exact two-particle energy eigenstates in an asymmetric rectangular box with periodic boundary conditions in all three directions are studied. Their relation with the elastic scattering phases of the two particles in the continuum are obtained. These results can be viewed as a generalization of the corresponding formulae in a cubic box obtained by Luescher before. In particular, the s-wave scattering length is related to the energy shift in the finite box. Possible applications of these formulae are also discussed

  3. The AirQuality SenseBox

    Science.gov (United States)

    Demuth, Dustin; Nuest, Daniel; Bröring, Arne; Pebesma, Edzer

    2013-04-01

    In the past year, a group of open hardware enthusiasts and citizen scientists had large success in the crowd-funding of an open hardware-based sensor platform for air quality monitoring, called the Air Quality Egg. Via the kickstarter platform, the group was able to collect triple the amount of money than needed to fulfill their goals. Data generated by the Air Quality Egg is pushed to the data logging platform cosm.com, which makes the devices a part of the Internet of Things. The project aims at increasing the participation of citizens in the collection of data, the development of sensors, the operation of sensor stations, and, as data on cosm is publicly available, the sharing, visualization and analysis of data. Air Quality Eggs can measure NO2 and CO concentrations, as well as relative humidity and temperature. The chosen sensors are low-cost and have limited precision and accurracy. The Air Quality Egg consists of a stationary outdoor and a stationary indoor unit. Each outdoor unit will wirelessly transmit air quality measurements to the indoor unit, which forwards the data to cosm. Most recent versions of the Air Quality Egg allow a rough calibration of the gas sensors and on-the-fly conversion from raw sensor readings (impedance) to meaningful air quality data expressed in units of parts per billion. Data generated by these low-cost platforms are not intended to replace well-calibrated official monitoring stations, but rather augment the density of the total monitoring network with citizen sensors. To improve the usability of the Air Quality Egg, we present a new and more advanced concept, called the AirQuality SenseBox. We made the outdoor platform more autonomous and location-aware by adding solarpanels and rechargeable batteries as a power source. The AirQuality SenseBox knows its own position from a GPS device attached to the platform. As a mobile sensor platform, it can for instance be attached to vehicles. A low-cost and low-power wireless chipset

  4. MADS-box gene evolution - structure and transcription patterns

    DEFF Research Database (Denmark)

    Johansen, Bo; Pedersen, Louise Buchholt; Skipper, Martin

    2002-01-01

    Mads-box genes, ABC model, Evolution, Phylogeny, Transcription patterns, Gene structure, Conserved motifs......Mads-box genes, ABC model, Evolution, Phylogeny, Transcription patterns, Gene structure, Conserved motifs...

  5. Hyperspectral Soil Mapper (HYSOMA) software interface: Review and future plans

    Science.gov (United States)

    Chabrillat, Sabine; Guillaso, Stephane; Eisele, Andreas; Rogass, Christian

    2014-05-01

    With the upcoming launch of the next generation of hyperspectral satellites that will routinely deliver high spectral resolution images for the entire globe (e.g. EnMAP, HISUI, HyspIRI, HypXIM, PRISMA), an increasing demand for the availability/accessibility of hyperspectral soil products is coming from the geoscience community. Indeed, many robust methods for the prediction of soil properties based on imaging spectroscopy already exist and have been successfully used for a wide range of soil mapping airborne applications. Nevertheless, these methods require expert know-how and fine-tuning, which makes them used sparingly. More developments are needed toward easy-to-access soil toolboxes as a major step toward the operational use of hyperspectral soil products for Earth's surface processes monitoring and modelling, to allow non-experienced users to obtain new information based on non-expensive software packages where repeatability of the results is an important prerequisite. In this frame, based on the EU-FP7 EUFAR (European Facility for Airborne Research) project and EnMAP satellite science program, higher performing soil algorithms were developed at the GFZ German Research Center for Geosciences as demonstrators for end-to-end processing chains with harmonized quality measures. The algorithms were built-in into the HYSOMA (Hyperspectral SOil MApper) software interface, providing an experimental platform for soil mapping applications of hyperspectral imagery that gives the choice of multiple algorithms for each soil parameter. The software interface focuses on fully automatic generation of semi-quantitative soil maps such as soil moisture, soil organic matter, iron oxide, clay content, and carbonate content. Additionally, a field calibration option calculates fully quantitative soil maps provided ground truth soil data are available. Implemented soil algorithms have been tested and validated using extensive in-situ ground truth data sets. The source of the HYSOMA

  6. Impact of interface manipulation of oxide on electrical transport properties and low-frequency noise in MgO/NiFe/MgO heterojunctions

    International Nuclear Information System (INIS)

    Li, Jian-wei; Zhao, Chong-jun; Feng, Chun; Yu, Guang-hua; Zhou, Zhongfu

    2015-01-01

    Low-frequency noise and magnetoresistance in sputtered-deposited Ta(5 nm)/MgO (3 nm)/NiFe(10 nm)/MgO(3 nm)/Ta(3 nm) films have been measured as a function of different annealing times at 400°C. These measurements did not change synchronously with annealing time. A significant increase in magnetoresistance is observed for short annealing times (of the order of minutes) and is correlated with a relatively small reduction in 1/f noise. In contrast, a significant reduction in 1/f noise is observed for long annealing times (of the order of hours) accompanied by a small change in magnetoresistance. After annealing for 2 hours, the 1/f noise decreases by three orders of magnitude. Transmission electron microscopy and slow positron annihilation results implicate the cause being micro-structural changes in the MgO layers and interfaces following different annealing times. The internal vacancies in the MgO layers gather into vacancy clusters to reduce the defect density after short annealing times, whereas the MgO/NiFe and the NiFe/MgO interfaces improve significantly after long annealing times with the amorphous MgO layers gradually crystallizing following the release of interfacial stress

  7. Impact of interface manipulation of oxide on electrical transport properties and low-frequency noise in MgO/NiFe/MgO heterojunctions

    Science.gov (United States)

    Li, Jian-wei; Zhao, Chong-jun; Feng, Chun; Zhou, Zhongfu; Yu, Guang-hua

    2015-08-01

    Low-frequency noise and magnetoresistance in sputtered-deposited Ta(5 nm)/MgO (3 nm)/NiFe(10 nm)/MgO(3 nm)/Ta(3 nm) films have been measured as a function of different annealing times at 400°C. These measurements did not change synchronously with annealing time. A significant increase in magnetoresistance is observed for short annealing times (of the order of minutes) and is correlated with a relatively small reduction in 1/f noise. In contrast, a significant reduction in 1/f noise is observed for long annealing times (of the order of hours) accompanied by a small change in magnetoresistance. After annealing for 2 hours, the 1/f noise decreases by three orders of magnitude. Transmission electron microscopy and slow positron annihilation results implicate the cause being micro-structural changes in the MgO layers and interfaces following different annealing times. The internal vacancies in the MgO layers gather into vacancy clusters to reduce the defect density after short annealing times, whereas the MgO/NiFe and the NiFe/MgO interfaces improve significantly after long annealing times with the amorphous MgO layers gradually crystallizing following the release of interfacial stress.

  8. Impact of interface manipulation of oxide on electrical transport properties and low-frequency noise in MgO/NiFe/MgO heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jian-wei [School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhao, Chong-jun; Feng, Chun; Yu, Guang-hua [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhou, Zhongfu [School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)

    2015-08-15

    Low-frequency noise and magnetoresistance in sputtered-deposited Ta(5 nm)/MgO (3 nm)/NiFe(10 nm)/MgO(3 nm)/Ta(3 nm) films have been measured as a function of different annealing times at 400°C. These measurements did not change synchronously with annealing time. A significant increase in magnetoresistance is observed for short annealing times (of the order of minutes) and is correlated with a relatively small reduction in 1/f noise. In contrast, a significant reduction in 1/f noise is observed for long annealing times (of the order of hours) accompanied by a small change in magnetoresistance. After annealing for 2 hours, the 1/f noise decreases by three orders of magnitude. Transmission electron microscopy and slow positron annihilation results implicate the cause being micro-structural changes in the MgO layers and interfaces following different annealing times. The internal vacancies in the MgO layers gather into vacancy clusters to reduce the defect density after short annealing times, whereas the MgO/NiFe and the NiFe/MgO interfaces improve significantly after long annealing times with the amorphous MgO layers gradually crystallizing following the release of interfacial stress.

  9. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  10. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  11. Simulation of Magnetic Phenomena at Realistic Interfaces

    KAUST Repository

    Grytsyuk, Sergiy

    2016-01-01

    (4d) and ferromagnetic 3d-metal interfaces and their dependences on aspects such as interdiffusion, surface oxidation, thin film thickness and lattice mismatch. We find that changes of structural details strongly alter the electronic states, which

  12. Thermal cycling damage evolution of a thermal barrier coating and the influence of substrate creep, interface roughness and pre-oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Schweda, Mario; Beck, Tilmann; Singheiser, Lorenz [Forschungszentrum Juelich GmbH (DE). Inst. fuer Energie- und Klimaforschung (IEK), Werkstoffstruktur und Eigenschaften (IEK-2)

    2012-01-15

    The influence of roughness profile shape, roughness depth, bond coat creep strength and pre-oxidation on the thermal cycling damage evolution and lifetime of a plasma-sprayed ZrO{sub 2} thermal barrier coating system was investigated. A simplified model system was used where FeCrAlY substrates simulated the bond coat. Substrate creep was varied by using the oxide dispersoid strengthened alloy MA956 and the conventional material Fecralloy. Stochastic 3- and periodic 2-dimensional roughness profiles were produced by sand blasting and high speed turning. Damage evolution is significantly influenced by substrate creep with a trend to higher lifetimes for the fast creeping substrate. Pre-oxidation has no influence. Lifetimes of the periodically profiled samples are up to 100 times lower than these of stochastically profiled samples. In the case of periodically profiled samples, the highest lifetime was reached for the highest roughness depth combined with local undercuttings in the roughness profile. For stochastically profiled samples the influence of roughness depth could not be determined due to the wide lifetime scatter. (orig.)

  13. Packing a cake into a box

    KAUST Repository

    Skopenkov, Mikhail

    2011-01-01

    Given a triangular cake and a box in the shape of its mirror image, how can the cake be cut into a minimal number of pieces so that it can be put into the box? The cake has icing, so we are not allowed to put it into the box upside down. V. G. Boltyansky asked this question in 1977 and showed that three pieces always suffice. In this paper we provide examples of cakes that cannot be cut into two pieces to be put into the box. This shows that three is the answer to Boltyansky's question. We also give examples of cakes which can be cut into two pieces. © THE MATHEMATICAL ASSOCIATION OF AMERICA.

  14. A Lithium Vapor Box Divertor Similarity Experiment

    Science.gov (United States)

    Cohen, Robert A.; Emdee, Eric D.; Goldston, Robert J.; Jaworski, Michael A.; Schwartz, Jacob A.

    2017-10-01

    A lithium vapor box divertor offers an alternate means of managing the extreme power density of divertor plasmas by leveraging gaseous lithium to volumetrically extract power. The vapor box divertor is a baffled slot with liquid lithium coated walls held at temperatures which increase toward the divertor floor. The resulting vapor pressure differential drives gaseous lithium from hotter chambers into cooler ones, where the lithium condenses and returns. A similarity experiment was devised to investigate the advantages offered by a vapor box divertor design. We discuss the design, construction, and early findings of the vapor box divertor experiment including vapor can construction, power transfer calculations, joint integrity tests, and thermocouple data logging. Heat redistribution of an incident plasma-based heat flux from a typical linear plasma device is also presented. This work supported by DOE Contract No. DE-AC02-09CH11466 and The Princeton Environmental Institute.

  15. Glove boxes. Dimensions and requirements. Draft

    International Nuclear Information System (INIS)

    1985-07-01

    The standard is to be applied to work done in glove-boxes, whereby either the personnel need to be protected from the damaging effects of the materials being handled, or the materials from the effects of the environment. It is to be applied to glove-boxes in which substances are handled which emit ionising radiation (radioactive substances). This norm is not restricted to glove-boxes in which processes are carried out on a technique scale. In accordance with this norm, only those pressures and temperatures are allowed to be present in the glove-boxes, that do not offer significantly from the work areas. Alongside the stipulations of this standard regard is also always to be taken of the regulations in the radiation protection ordinance. (orig./HP) [de

  16. Grey Box Modelling of Hydrological Systems

    DEFF Research Database (Denmark)

    Thordarson, Fannar Ørn

    of two papers where the stochastic differential equation based model is used for sewer runoff from a drainage system. A simple model is used to describe a complex rainfall-runoff process in a catchment, but the stochastic part of the system is formulated to include the increasing uncertainty when...... rainwater flows through the system, as well as describe the lower limit of the uncertainty when the flow approaches zero. The first paper demonstrates in detail the grey box model and all related transformations required to obtain a feasible model for the sewer runoff. In the last paper this model is used......The main topic of the thesis is grey box modelling of hydrologic systems, as well as formulation and assessment of their embedded uncertainties. Grey box model is a combination of a white box model, a physically-based model that is traditionally formulated using deterministic ordinary differential...

  17. EPA EcoBox Tools by Stressors

    Science.gov (United States)

    Eco-Box is a toolbox for exposure assessors. Its purpose is to provide a compendium of exposure assessment and risk characterization tools that will present comprehensive step-by-step guidance and links to relevant exposure assessment data bases

  18. Packing a cake into a box

    KAUST Repository

    Skopenkov, Mikhail

    2011-05-01

    Given a triangular cake and a box in the shape of its mirror image, how can the cake be cut into a minimal number of pieces so that it can be put into the box? The cake has icing, so we are not allowed to put it into the box upside down. V. G. Boltyansky asked this question in 1977 and showed that three pieces always suffice. In this paper we provide examples of cakes that cannot be cut into two pieces to be put into the box. This shows that three is the answer to Boltyansky\\'s question. We also give examples of cakes which can be cut into two pieces. © THE MATHEMATICAL ASSOCIATION OF AMERICA.

  19. Black-Box Search by Unbiased Variation

    DEFF Research Database (Denmark)

    Lehre, Per Kristian; Witt, Carsten

    2012-01-01

    The complexity theory for black-box algorithms, introduced by Droste, Jansen, and Wegener (Theory Comput. Syst. 39:525–544, 2006), describes common limits on the efficiency of a broad class of randomised search heuristics. There is an obvious trade-off between the generality of the black-box model...... and the strength of the bounds that can be proven in such a model. In particular, the original black-box model provides for well-known benchmark problems relatively small lower bounds, which seem unrealistic in certain cases and are typically not met by popular search heuristics.In this paper, we introduce a more...... restricted black-box model for optimisation of pseudo-Boolean functions which we claim captures the working principles of many randomised search heuristics including simulated annealing, evolutionary algorithms, randomised local search, and others. The key concept worked out is an unbiased variation operator...

  20. Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field

    International Nuclear Information System (INIS)

    Molina, J.; De La Hidalga, J.; Gutierrez, E.

    2014-01-01

    After fabrication of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices on high-index silicon (114) surfaces, their threshold voltage (Vth) and interface-states density (Dit) characteristics were measured under the influence of an externally applied magnetic field of B = 6 μT at room temperature. The electron flow of the MOSFET's channel presents high anisotropy on Si (114), and this effect is enhanced by using an external magnetic field B, applied parallel to the Si (114) surface but perpendicular to the electron flow direction. This special configuration results in the channel electrons experiencing a Lorentzian force which pushes the electrons closer to the Si (114)-SiO 2 interface and therefore to the special morphology of the Si (114) surface. Interestingly, Dit evaluation of n-type MOSFETs fabricated on Si (114) surfaces shows that the Si (114)-SiO 2 interface is of high quality so that Dit as low as ∼10 10  cm −2 ·eV −1 are obtained for MOSFETs with channels aligned at specific orientations. Additionally, using both a small positive Vds ≤ 100 mV and B = 6 μT, the former Dit is reduced by 35% in MOSFETs whose channels are aligned parallel to row-like nanostructures formed atop Si (114) surfaces (channels having a 90° rotation), whereas Dit is increased by 25% in MOSFETs whose channels are aligned perpendicular to these nanostructures (channels having a 0° rotation). From these results, the special morphology of a high-index Si (114) plane having nanochannels on its surface opens the possibility to reduce the electron-trapping characteristics of MOSFET devices having deep-submicron features and operating at very high frequencies

  1. Study on structural integrity in box structures

    International Nuclear Information System (INIS)

    Asano, Masayuki; Ueta, Masahiro; Kanaoka, Tadashi; Ikeuchi, Toshiaki; Kodama, Tetsuhiro.

    1991-01-01

    This study was carried out to give an experimental foundation to the structural integrity of a box structure. Crack growth tests were performed on the reduced scale models, simulating typical portions of the box structure, in air at room temperature. The results show that the amount of crack growth is too small to injure the structural integrity of the models for the postulated loading cycle, and make clear the effective structure against crack growth. (author)

  2. Random Young diagrams in a Rectangular Box

    DEFF Research Database (Denmark)

    Beltoft, Dan; Boutillier, Cédric; Enriquez, Nathanaël

    We exhibit the limit shape of random Young diagrams having a distribution proportional to the exponential of their area, and confined in a rectangular box. The Ornstein-Uhlenbeck bridge arises from the fluctuations around the limit shape.......We exhibit the limit shape of random Young diagrams having a distribution proportional to the exponential of their area, and confined in a rectangular box. The Ornstein-Uhlenbeck bridge arises from the fluctuations around the limit shape....

  3. The oxidation of SO2 by NO2(g) at the air-water interface of aquated aerosol: implications for the rapid onset of haze-aerosol events in China

    Science.gov (United States)

    Li, L.; Colussi, A. J.; Hoffmann, M. R.

    2017-12-01

    Aqueous phase chemistry plays a vital role in the global atmosphere. The importance of heterogeneous chemistry has been recently underscored by the severe haze-fog pollution episodes experienced in Chinese megacities. A key finding is that despite reduced photochemistry during the wintertime haze events, the oxidation of S(IV) into sulfate aerosol occurs rapidly in spite of the low levels of ozone and H2O2. Field observations suggest that NO2 could serve as a suitable oxidant of S(IV) during the events under neutral pH conditions. However, the haze aerosols are mostly acidic. Furthermore, the air-water interface is more acidic than bulk-phase aquated system according to our recent findings. This work investigates the chemistry taking place as NO2(g) collides with the surface of aqueous S(IV) microdroplets as a function of pH to closely simulate actual haze aerosol events under atmospheric conditions. The reaction between NO2(g) and HSO3- (aq) is studied in situ under ambient temperature and pressure via online electrospray ionization mass spectrometry. The aqueous aerosols containing HSO3- is generated using a microjet which is exposed to NO2(g) alternatively, while the composition of the 1 nm interfacial liquid layer of the aerosol is instantaneously measured. The ratio of HSO3- to HSO4- is observed to decrease with the concomitant appearance of a strong m/z 62 signal upon NO2(g) exposure. The appearance of m/z 62 indicates the formation of NO3- via the disproportionation of NO2 (2NO2(g) + H2O (l) ⇌ H++NO3-(aq) + HONO(aq)) and thus impacts the ion-ion interactions of NO3- on the ratio of HSO3- to HSO4- in the outermost interfacial layers. Parallel experiments with NO3-(aq) additions are conducted to quantify the impact of NO3- on the the ratio, in order to unravel the contribution of NO2 to the oxidation of S(IV). After accounting for the HNO3 effect, it is concluded: (1) most NO2(g) is converted into NO3- via anion-catalyzed hydrolytic disproportionation; (2

  4. Contaminants in ventilated filling boxes

    Science.gov (United States)

    Bolster, D. T.; Linden, P. F.

    While energy efficiency is important, the adoption of energy-efficient ventilation systems still requires the provision of acceptable indoor air quality. Many low-energy systems, such as displacement or natural ventilation, rely on temperature stratification within the interior environment, always extracting the warmest air from the top of the room. Understanding buoyancy-driven convection in a confined ventilated space is key to understanding the flow that develops with many of these modern low-energy ventilation schemes. In this work we study the transport of an initially uniformly distributed passive contaminant in a displacement-ventilated space. Representing a heat source as an ideal sourced of buoyancy, analytical and numerical models are developed that allow us to compare the average efficiency of contaminant removal between traditional mixing and modern low-energy systems. A set of small-scale analogue laboratory experiments was also conducted to further validate our analytical and numerical solutions.We find that on average traditional and low-energy ventilation methods are similar with regard to pollutant flushing efficiency. This is because the concentration being extracted from the system at any given time is approximately the same for both systems. However, very different vertical concentration gradients exist. For the low-energy system, a peak in contaminant concentration occurs at the temperature interface that is established within the space. This interface is typically designed to sit at some intermediate height in the space. Since this peak does not coincide with the extraction point, displacement ventilation does not offer the same benefits for pollutant flushing as it does for buoyancy removal.

  5. Box-Cox transformation for QTL mapping.

    Science.gov (United States)

    Yang, Runqing; Yi, Nengjun; Xu, Shizhong

    2006-01-01

    The maximum likelihood method of QTL mapping assumes that the phenotypic values of a quantitative trait follow a normal distribution. If the assumption is violated, some forms of transformation should be taken to make the assumption approximately true. The Box-Cox transformation is a general transformation method which can be applied to many different types of data. The flexibility of the Box-Cox transformation is due to a variable, called transformation factor, appearing in the Box-Cox formula. We developed a maximum likelihood method that treats the transformation factor as an unknown parameter, which is estimated from the data simultaneously along with the QTL parameters. The method makes an objective choice of data transformation and thus can be applied to QTL analysis for many different types of data. Simulation studies show that (1) Box-Cox transformation can substantially increase the power of QTL detection; (2) Box-Cox transformation can replace some specialized transformation methods that are commonly used in QTL mapping; and (3) applying the Box-Cox transformation to data already normally distributed does not harm the result.

  6. Sport medicine and the ethics of boxing

    Science.gov (United States)

    Leclerc, S.; Herrera, C. D.

    1999-01-01

    In the light of medical evidence of the health risks associated with boxing, a watchful agnostic position among sport physicians is no longer justifiable. The normal activity in a boxing match places the athletes at risk of head injury, some of which may be difficult to detect and impossible to repair. This suggests that sport physicians and others expert in the prevention and diagnosis of such injuries should take a public stand against boxing, as other medical associations have. Although there is a need for continuing research into the health risks, doctors can in the interim take steps to increase public awareness of these risks. Sport physicians in particular can make a strong public statement by also ending their professional involvement with boxing. This need not be interpreted as paternalism; doctors are qualified neither to make laws nor to restrict private behaviour. Sport physicians are, however, well equipped to advise those who do make laws and those who choose to engage in boxing. In the end, because this stance against boxing will probably reduce the number of brain injuries in certain athletes, autonomy will be preserved, rather than restricted. 


 PMID:10597855

  7. Amateur boxing: physical and physiological attributes.

    Science.gov (United States)

    Chaabène, Helmi; Tabben, Montassar; Mkaouer, Bessem; Franchini, Emerson; Negra, Yassine; Hammami, Mehrez; Amara, Samiha; Chaabène, Raja Bouguezzi; Hachana, Younés

    2015-03-01

    Boxing is one of the oldest combat sports. The aim of the current review is to critically analyze the amateur boxer's physical and physiological characteristics and to provide practical recommendations for training as well as new areas of scientific research. High-level male and female boxers show a propensity for low body fat levels. Although studies on boxer somatotypes are limited, the available information shows that elite-level male boxers are characterized by a higher proportion of mesomorphy with a well-developed muscle mass and a low body fat level. To help support the overall metabolic demands of a boxing match and to accelerate the recovery process between rounds, athletes of both sexes require a high level of cardiorespiratory fitness. International boxers show a high peak and mean anaerobic power output. Muscle strength in both the upper and lower limbs is paramount for a fighter's victory and is one of the keys to success in boxing. As boxing punches are brief actions and very dynamic, high-level boxing performance requires well-developed muscle power in both the upper and lower limbs. Albeit limited, the available studies reveal that isometric strength is linked to high-level boxing performance. Future investigations into the physical and physiological attributes of boxers are required to enrich the current data set and to help create a suitable training program.

  8. Soft Interfaces

    International Nuclear Information System (INIS)

    Strzalkowski, Ireneusz

    1997-01-01

    This book presents an extended form of the 1994 Dirac Memorial Lecture delivered by Pierre Gilles de Gennes at Cambridge University. The main task of the presentation is to show the beauty and richness of structural forms and phenomena which are observed at soft interfaces between two media. They are much more complex than forms and phenomena existing in each phase separately. Problems are discussed including both traditional, classical techniques, such as the contact angle in static and dynamic partial wetting, as well as the latest research methodology, like 'environmental' scanning electron microscopes. The book is not a systematic lecture on phenomena but it can be considered as a compact set of essays on topics which particularly fascinate the author. The continuum theory widely used in the book is based on a deep molecular approach. The author is particularly interested in a broad-minded rheology of liquid systems at interfaces with specific emphasis on polymer melts. To study this, the author has developed a special methodology called anemometry near walls. The second main topic presented in the book is the problem of adhesion. Molecular processes, energy transformations and electrostatic interaction are included in an interesting discussion of the many aspects of the principles of adhesion. The third topic concerns welding between two polymer surfaces, such as A/A and A/B interfaces. Of great worth is the presentation of various unsolved, open problems. The kind of topics and brevity of description indicate that this book is intended for a well prepared reader. However, for any reader it will present an interesting picture of how many mysterious processes are acting in the surrounding world and how these phenomena are perceived by a Nobel Laureate, who won that prize mainly for his investigations in this field. (book review)

  9. Understanding the Role of Temperature and Cathode Composition on Interface and Bulk: Optimizing Aluminum Oxide Coatings for Li-Ion Cathodes

    International Nuclear Information System (INIS)

    Han, Binghong; Paulauskas, Tadas; Key, Baris; Peebles, Cameron; Park, Joong Sun

    2017-01-01

    Here, surface coating of cathode materials with Al_2O_3 has been shown to be a promising method for cathode stabilization and improved cycling performance at high operating voltages. However, a detailed understanding on how coating process and cathode composition changes the chemical composition, morphology and distribution of coating within cathode interface and bulk lattice, is still missing. In this study, we use a wet-chemical method to synthesize a series of Al_2O_3-coated LiNi_0_._5Co_0_._2Mn_0_._3O_2 and LiCoO_2 cathodes treated under various annealing temperatures and a combination of structural characterization techniques to understand the composition, homogeneity and morphology of coating layer and the bulk cathode. Nuclear magnetic resonance and electron microscopy results reveal that the nature of the interface is highly depended on the annealing temperature and cathode composition. For Al_2O_3-coated LiNi_0_._5Co_0_._2Mn_0_._3O_2, higher annealing temperature leads to more homogeneous and more closely attached coating on cathode materials, corresponding to better electrochemical performance. Lower Al_2O_3 coating content is found to be helpful to further improve the initial capacity and cyclability, which can greatly outperform the pristine cathode material. For Al_2O_3-coated LiCoO_2, the incorporation of Al into the cathode lattice is observed after annealing at high temperatures, implying the transformation from “surface coatings” to “dopants”, which is not observed for LiNi_0_._5Co_0_._2Mn_0_._3O_2. As a result, Al_2O_3-coated LiCoO_2 annealed at higher temperature shows similar initial capacity but lower retention compared to that annealed at a lower temperature, due to the intercalation of surface alumina into the bulk layered structure forming a solid solution.

  10. Understanding the Role of Temperature and Cathode Composition on Interface and Bulk: Optimizing Aluminum Oxide Coatings for Li-Ion Cathodes.

    Science.gov (United States)

    Han, Binghong; Paulauskas, Tadas; Key, Baris; Peebles, Cameron; Park, Joong Sun; Klie, Robert F; Vaughey, John T; Dogan, Fulya

    2017-05-03

    Surface coating of cathode materials with Al 2 O 3 has been shown to be a promising method for cathode stabilization and improved cycling performance at high operating voltages. However, a detailed understanding on how coating process and cathode composition change the chemical composition, morphology, and distribution of coating within the cathode interface and bulk lattice is still missing. In this study, we use a wet-chemical method to synthesize a series of Al 2 O 3 -coated LiNi 0.5 Co 0.2 Mn 0.3 O 2 and LiCoO 2 cathodes treated under various annealing temperatures and a combination of structural characterization techniques to understand the composition, homogeneity, and morphology of the coating layer and the bulk cathode. Nuclear magnetic resonance and electron microscopy results reveal that the nature of the interface is highly dependent on the annealing temperature and cathode composition. For Al 2 O 3 -coated LiNi 0.5 Co 0.2 Mn 0.3 O 2 , higher annealing temperature leads to more homogeneous and more closely attached coating on cathode materials, corresponding to better electrochemical performance. Lower Al 2 O 3 coating content is found to be helpful to further improve the initial capacity and cyclability, which can greatly outperform the pristine cathode material. For Al 2 O 3 -coated LiCoO 2 , the incorporation of Al into the cathode lattice is observed after annealing at high temperatures, implying the transformation from "surface coatings" to "dopants", which is not observed for LiNi 0.5 Co 0.2 Mn 0.3 O 2 . As a result, Al 2 O 3 -coated LiCoO 2 annealed at higher temperature shows similar initial capacity but lower retention compared to that annealed at a lower temperature, due to the intercalation of surface alumina into the bulk layered structure forming a solid solution.

  11. Interface Screenings

    DEFF Research Database (Denmark)

    Thomsen, Bodil Marie Stavning

    2015-01-01

    In Wim Wenders' film Until the End of the World (1991), three different diagrams for the visual integration of bodies are presented: 1) GPS tracking and mapping in a landscape, 2) video recordings layered with the memory perception of these recordings, and 3) data-created images from dreams...... and memories. From a transvisual perspective, the question is whether or not these (by now realized) diagrammatic modes involving the body in ubiquitous global media can be analysed in terms of the affects and events created in concrete interfaces. The examples used are filmic as felt sensations...

  12. A flexible system to capture sample vials in a storage box - the box vial scanner.

    Science.gov (United States)

    Nowakowski, Steven E; Kressin, Kenneth R; Deick, Steven D

    2009-01-01

    Tracking sample vials in a research environment is a critical task and doing so efficiently can have a large impact on productivity, especially in high volume laboratories. There are several challenges to automating the capture process, including the variety of containers used to store samples. We developed a fast and robust system to capture the location of sample vials being placed in storage that allows the laboratories the flexibility to use sample containers of varying dimensions. With a single scan, this device captures the box identifier, the vial identifier and the location of each vial within a freezer storage box. The sample vials are tracked through a barcode label affixed to the cap while the boxes are tracked by a barcode label on the side of the box. Scanning units are placed at the point of use and forward data to a sever application for processing the scanned data. Scanning units consist of an industrial barcode reader mounted in a fixture positioning the box for scanning and providing lighting during the scan. The server application transforms the scan data into a list of storage locations holding vial identifiers. The list is then transferred to the laboratory database. The box vial scanner captures the IDs and location information for an entire box of sample vials into the laboratory database in a single scan. The system accommodates a wide variety of vials sizes by inserting risers under the sample box and a variety of storage box layouts are supported via the processing algorithm on the server.

  13. Design and Development of Black Box for Analyzing Accidents in Indian Railways

    Directory of Open Access Journals (Sweden)

    Alka DUBEY

    2010-03-01

    Full Text Available Black box also known as engine data recorder (EDR is a device for recording and analyzing train engine status for generation a report and analyzing train accidents. EDR is an application of embedded systems based on sensors, microcontroller, memory, serial interface and display unit. In the present paper designing of EDR with their technical specifications is provided. There railway electric engine WAP-7 is used in present study.

  14. Confined Catalysis in the g-C3N4/Pt(111) Interface: Feasible Molecule Intercalation, Tunable Molecule-Metal Interaction, and Enhanced Reaction Activity of CO Oxidation.

    Science.gov (United States)

    Wang, Shujiao; Feng, Yingxin; Yu, Ming'an; Wan, Qiang; Lin, Sen

    2017-09-27

    The deposition of a two-dimensional (2D) atomic nanosheet on a metal surface has been considered as a new route for tuning the molecule-metal interaction and surface reactivity in terms of the confinement effect. In this work, we use first-principles calculations to systematically explore a novel nanospace constructed by placing a 2D graphitic carbon nitride (g-C 3 N 4 ) nanosheet over a Pt(111) surface. The confined catalytic activity in this nanospace is investigated using CO oxidation as a model reaction. With the inherent triangular pores in the g-C 3 N 4 overlayer being taken advantage of, molecules such as CO and O 2 can diffuse to adsorb on the Pt(111) surface underneath the g-C 3 N 4 overlayer. Moreover, the mechanism of intercalation is also elucidated, and the results reveal that the energy barrier depends mainly on the properties of the molecule and the channel. Importantly, the molecule-catalyst interaction can be tuned by the g-C 3 N 4 overlayer, considerably reducing the adsorption energy of CO on Pt(111) and leading to enhanced reactivity in CO oxidation. This work will provide important insight for constructing a promising nanoreactor in which the following is observed: The molecule intercalation is facile; the molecule-metal interaction is efficiently tuned; the metal-catalyzed reaction is promoted.

  15. Exergaming boxing versus heavy-bag boxing: are these equipotent for individuals with spinal cord injury?

    Science.gov (United States)

    Mat Rosly, Maziah; Mat Rosly, Hadi; Hasnan, Nazirah; Davis, Glen M; Husain, Ruby

    2017-08-01

    Current strategies for increased physical activity and exercise in individuals with spinal cord injury (SCI) face many challenges with regards to maintaining their continuity of participation. Barriers cited often include problems with accessing facilities, mundane, monotonous or boring exercises and expensive equipment that is often not adapted for wheelchair users. To compare the physiological responses and user preferences between conventional heavy-bag boxing against a novel form of video game boxing, known as exergaming boxing. Cross-sectional study. Exercise laboratory setting in a university medical center. Seventeen participants with SCI were recruited, of which sixteen were male and only one female. Their mean age was 35.6±10.2 years. All of them performed a 15-minute physical exercise session of exergaming and heavy-bag boxing in a sitting position. The study assessed physiological responses in terms of oxygen consumption, metabolic equivalent (MET) and energy expenditure between exergaming and heavy-bag boxing derived from open-circuit spirometry. Participants also rated their perceived exertion using Borg's category-ratio ratings of perceived exertion. Both exergaming (MET: 4.3±1.0) and heavy-bag boxing (MET: 4.4±1.0) achieved moderate exercise intensities in these participants with SCI. Paired t-test revealed no significant differences (P>0.05, Cohen's d: 0.02-0.49) in the physiological or perceived exertional responses between the two modalities of boxing. Post session user survey reported all the participants found exergaming boxing more enjoyable. Exergaming boxing, was able to produce equipotent physiological responses as conventional heavy-bag boxing. The intensity of both exercise modalities achieved recommended intensities for health and fitness benefits. Exergaming boxing have the potential to provide an enjoyable, self-competitive environment for moderate-vigorous exercise even at the comfort of their homes.

  16. Complementarity in the Einstein-Bohr photon box

    NARCIS (Netherlands)

    Dieks, D.G.B.J.; Lam, S

    2008-01-01

    The Bohr-Einstein photon box thought experiment is a forerunner of the EPR experiment: a packet of radiation escapes from a box, and the box-plus-radiation state remains entangled. Hence, a measurement on the box makes a difference for the state of the far-away radiation long after its escape. This

  17. 49 CFR 230.101 - Steam locomotive driving journal boxes.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Steam locomotive driving journal boxes. 230.101... Locomotives and Tenders Running Gear § 230.101 Steam locomotive driving journal boxes. (a) Driving journal boxes. Driving journal boxes shall be maintained in a safe and suitable condition for service. Not more...

  18. 49 CFR 178.517 - Standards for plastic boxes.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 2 2010-10-01 2010-10-01 false Standards for plastic boxes. 178.517 Section 178... PACKAGINGS Non-bulk Performance-Oriented Packaging Standards § 178.517 Standards for plastic boxes. (a) The following are identification codes for plastic boxes: (1) 4H1 for an expanded plastic box; and (2) 4H2 for a...

  19. Plutonium glove boxes - metrology and operational states

    International Nuclear Information System (INIS)

    Thyer, A.M.

    2001-01-01

    The main objective was to undertake a literature review in support of NII's ongoing work in improving safety in the nuclear industry to help define suitable standards of cleanliness for plutonium glove boxes. This is to cover the following areas: existing or proposed national/international standards relating to plutonium glove box cleanliness management; practicable metrology options for assessing the plutonium content of glove boxes; any available dose information relating to the operation of modern and 'old design'; current contamination levels of specific significance (i.e. any accepted level in decommissioning/waste terms, typical criticality limits (if available), any box plutonium loadings that are documented with corresponding operator doses etc.); and, techniques for the decontamination of plutonium glove boxes and their relative effectiveness. This should then form the basis of any further development work undertaken by the UK nuclear industry. Main recommendations are as follows: 1) No information could be found in open literature on acceptable levels of contamination in boxes and action levels for cleanup. If these are not available in closed publications the 2) Where possible, the decontamination methods identified should be tested and dose information recorded against each method to allow informed decisions on which is the optimum technique for a particular form of contamination. 3) Consideration should be given to utilisation of metrology options which have the lowest potential for exposure of operators. Preferred options, may be detection from the outside of boxes using hand-held or permanently located radiation detectors, or semi-intrusive methods such as air-ionisation readings which would require one-off installation of detectors in ductwork

  20. Forkhead box O and the control of cellular oxidative stress

    NARCIS (Netherlands)

    Essers, M.A.G.

    2004-01-01

    FOXO Forkhead transcription factors are a subfamily of the large superfamily of Forkhead transcription factors, which consists of over 100 different members, expressed in species ranging from yeast to humans. Members of this family of transcription factors have been demonstrated to play important

  1. Museets interface

    DEFF Research Database (Denmark)

    Pold, Søren

    2007-01-01

    Søren Pold gør sig overvejelser med udgangspunkt i museumsprojekterne Kongedragter.dk og Stigombord.dk. Han argumenterer for, at udviklingen af internettets interfaces skaber nye måder at se, forstå og interagere med kulturen på. Brugerne får nye medievaner og perceptionsmønstre, der må medtænkes i...... tilrettelæggelsen af den fremtidige formidling. Samtidig får museets genstande en ny status som flygtige ikoner i det digitale rum, og alt i alt inviterer det til, at museerne kan forholde sig mere åbent og eksperimenterende til egen praksis og rolle som kulturinstitution....

  2. Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

    Science.gov (United States)

    MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

    2012-11-27

    We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

  3. Fuel assembly and fuel channel box

    International Nuclear Information System (INIS)

    Sakuma, Toraki; Hirakawa, Hiromasa; Ishizaki, Hideaki; Nakajima, Junjiro; Aizawa, Yasuhiro.

    1992-01-01

    A fuel channel box has a square cylindrical shape and, in the transversal cross sectional shape, the wall thickness of a corner portion is greater than that of a central portion of the side wall except for an upper portion thereof. The upper portion of the channel box includes a region to be in contact with an upper lattice plate and a region to attach a channel spacer. Then, the wall thickness of these regions is uniform in the transversal cross section and they have the same wall thickness with that of the corner portion which has the increased wall thickness. With such a constitution, the upper portion of the channel box receives a counter force applied from the upper lattice plate upon occurrence of earthquakes and moderate it to reduce local stresses and deformation. Further, a similar region with increased wall thickness is disposed also to the lower portion of the channel box, thereby enabling to suppress the amount of coolants leaked from a portion between the lower portion and a lower tie plate, and improve the mechanical integrity of the channel box. (I.N.)

  4. Changes in position and quality of preferred nest box: effects on nest box use by laying hens

    DEFF Research Database (Denmark)

    Riber, Anja Brinch; Nielsen, Birte L.

    2013-01-01

    Using laying hens, we investigated whether position of a nest box, both within the pen and relative to other nest boxes, influenced the preference for a nest box, and how a sudden and marked change to the preferred box influenced the use of nest boxes by the hens. Groups (n=12) of 15 Isa Warren...... hens were housed in pens, each with five identical nest boxes in different positions: Two single (in a corner or not) and a triplet of nest boxes (one of which in a corner). The use of nest boxes was determined by the number of eggs laid daily in each box. Three experiments, each lasting 10 days, were...... carried out. First, the undisturbed use of each of the nest box types was investigated, and a strong preference (Peggs laid there. Second, each of the hen groups was moved to another pen allocated at random, and where...

  5. Interface characterization of InSb MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Shapira, Y.; Bregman, J.; Calahorra, Z.; Goshen, R.

    1982-03-26

    The electrical properties of MOS devices are critically dependent on the oxide-semiconductor interface. The preparation of suitable insulating layers of oxide or other material is essential for the performance of such devices and it is particularly difficult in the case of III-V compound semiconductors. We report a method of preparing an insulating layer on InSb by a plasma oxidation process. The oxidation method will be described as well as results of the analysis of the oxide-semiconductor interface by electrical and compositional techniques. Capacitance-voltage characteristics reveal the existence of interface states which are distributed near the conduction and the valence bands with a higher density near the former. Depth profiling of the oxide by Ar/sup +/ sputtering and Auger electron spectroscopy (AES) shows that the oxide is composed of a mixture of indium oxide with antimony oxide.

  6. Reassessment of the nonlocality of correlation boxes

    Energy Technology Data Exchange (ETDEWEB)

    Costa, A.P.; Parisio, Fernando, E-mail: parisio@df.ufpe.br

    2017-01-15

    Correlation boxes are hypothetical systems usually designed to produce the maximal algebraic violation of a Bell inequality, beyond the quantum bound and without superluminal signalling. The fact that these systems show stronger correlations than those presented by maximally entangled quantum states, as the spin singlet, has been regarded as a demonstration that the former are more nonlocal than the latter. By applying an alternative, consistent measure of nonlocality to a family of correlation boxes, we show that this conclusion is not necessarily true. Complementarily, we define a class of systems displaying subquantum correlations which, nevertheless, are more nonlocal than the singlet state, showing that the extent of the numeric violation of an inequality may have little to do with the degree of nonlocality, especially in the case of correlation boxes.

  7. Lévy flights in a box

    International Nuclear Information System (INIS)

    Iomin, Alexander

    2015-01-01

    Highlights: •A quantum Lévy process in a box involves topological constraints in space. •The eigenvalue problem is formulated for the Lévy process in the box. •The path integral formalism with the Lévy measure is constructed. •The evolution operator is obtained in the path integral presentation. -- Abstract: It is shown that a quantum Lévy process in a box leads to a problem involving topological constraints in space, and its treatment in the framework of the path integral formalism with the Lévy measure is suggested. The eigenvalue problem for the infinite potential well is properly defined and solved. An analytical expression for the evolution operator is obtained in the path integral presentation, and the path integral takes the correct limit of the local quantum mechanics with topological constraints. An example of the Lévy process in oscillating walls is also considered in the adiabatic approximation

  8. Design and Development of Smart Medicine Box

    Science.gov (United States)

    Rosli, Ekbal; Husaini, Yusnira

    2018-03-01

    The Smart Medicine Box is successfully designed in helping the introvert patients taking their medicine without help of others. This project is to develop a robotic device that can assist patient to take medicine alone by implementing an IOT apps system for controlling the Smart Medicine Box where it will overcome an emotional disturbance experience by the introvert patients. There are four sensors such as PIR, IR, temperature and ultrasonic sensors use for the project. The purpose of PIR sensor is to detect hand movement near the device, while IR sensor is to detect the line follower on the floor. The LM 35 acts as the detection of the temperature inside the box and the ultrasonic acts as the detection of the obstacle in front of the device. The MIT Apps Invention 2 is used to develop an apps and collect the data from sensors through Arduino microcontroller. A proof of concept design has implemented and demonstrated successfully.

  9. Fire test of DOT 7A Boxes

    International Nuclear Information System (INIS)

    Jensen, J.D.

    1979-05-01

    The primary objective of conducting the full-scale fire tests of the DOT (Department of Transportation) 7A FRP Boxes was to provide information to assist in quantifying the fire hazard of the storage located at the Radioactive Waste Management Complex (RWMC), and to learn if changing the storage array will decrease the fire risk. Also, the level of fire fighting and fire protection required to maintain the risk at the RWMC within acceptable DOE guidelines was investigated. Two full-scale fire tests were conducted at Southwest Research Institute (SwRI) in June 1978, using the DOE 7A FRP Plywood Storage Containers. The fire tests showed that when subjected to a substantial ignition source, the boxes will propagate fire as long as no fire-suppression measures are taken. Fire will breach the boxes and spread the radioactive contaminated waste if it is not extinguished. As the fire progresses, additional boxes will become involved, and eventually the entire storage array will ignite. It is recommended that the use of DOT 7A Boxes be discontinued and replaced with noncombustible storage containers. In the event this is not practicable, guidance recommendations are presented to minimize the large fire loss potential. It is also recommended that an investigation be conducted into the number of boxes that can be destroyed and still maintain a safe environment for employees and the public. This investigation should include how far radioactive contamination will spread, what cleanup will be required, anticipated exposure of the people within the area, and the public impact of such a fire

  10. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  11. Evaluation of Explanation Interfaces in Recommender Systems

    Directory of Open Access Journals (Sweden)

    Sergio Cleger-Tamayo

    2017-05-01

    Full Text Available Explaining interfaces become a useful tool in systems that have a lot of content to evaluate by users. The different interfaces represent a help for the undecided users or those who consider systems as boxed black smart. These systems present recommendations to users based on different learning models. In this paper, we present the different objectives of the explanation interfaces and some of the criteria that you can evaluate, as well as a proposal of metrics to obtain results in the experiments. Finally, we showed the main results of a study with real users and their interaction with e-commerce systems. Among the main results, highlight the positive impact in relation to the time of interaction with the applications and acceptance of the recommendations received.

  12. High-temperature catalytic reforming of n-hexane over supported and core-shell Pt nanoparticle catalysts: role of oxide-metal interface and thermal stability.

    Science.gov (United States)

    An, Kwangjin; Zhang, Qiao; Alayoglu, Selim; Musselwhite, Nathan; Shin, Jae-Youn; Somorjai, Gabor A

    2014-08-13

    Designing catalysts with high thermal stability and resistance to deactivation while simultaneously maintaining their catalytic activity and selectivity is of key importance in high-temperature reforming reactions. We prepared Pt nanoparticle catalysts supported on either mesoporous SiO2 or TiO2. Sandwich-type Pt core@shell catalysts (SiO2@Pt@SiO2 and SiO2@Pt@TiO2) were also synthesized from Pt nanoparticles deposited on SiO2 spheres, which were encapsulated by either mesoporous SiO2 or TiO2 shells. n-Hexane reforming was carried out over these four catalysts at 240-500 °C with a hexane/H2 ratio of 1:5 to investigate thermal stability and the role of the support. For the production of high-octane gasoline, branched C6 isomers are more highly desired than other cyclic, aromatic, and cracking products. Over Pt/TiO2 catalyst, production of 2-methylpentane and 3-methylpentane via isomerization was increased selectively up to 420 °C by charge transfer at Pt-TiO2 interfaces, as compared to Pt/SiO2. When thermal stability was compared between supported catalysts and sandwich-type core@shell catalysts, the Pt/SiO2 catalyst suffered sintering above 400 °C, whereas the SiO2@Pt@SiO2 catalyst preserved the Pt nanoparticle size and shape up to 500 °C. The SiO2@Pt@TiO2 catalyst led to Pt nanoparticle sintering due to incomplete protection of the TiO2 shells during the reaction at 500 °C. Interestingly, over the Pt/TiO2 catalyst, the average size of Pt nanoparticles was maintained even after 500 °C without sintering. In situ ambient pressure X-ray photoelectron spectroscopy demonstrated that the Pt/TiO2 catalyst did not exhibit TiO2 overgrowth on the Pt surface or deactivation by Pt sintering up to 600 °C. The extraordinarily high stability of the Pt/TiO2 catalyst promoted high reaction rates (2.0 μmol · g(-1) · s(-1)), which was 8 times greater than other catalysts and high isomer selectivity (53.0% of C6 isomers at 440 °C). By the strong metal-support interaction

  13. Interface doping of conjugated organic films by means of diffusion of atomic components from the surfaces of semiconductors and of metal oxides.

    Science.gov (United States)

    Komolov, A S; Akhremtchik, S N; Lazneva, E F

    2011-08-15

    The paper reports the results on the interface formation of 5-10 nm thick conjugated layers of Cu-phthalocyanine (CuPc) with a number of solid surfaces: polycrystalline Au, (SiO(2))n-Si, ZnO(0 0 0 1), Si(1 0 0), Ge(1 1 1), CdS(0 0 0 1) and GaAs(1 0 0). The results were obtained using Auger electron spectroscopy (AES) and low-energy target current electron spectroscopy (TCS). The organic overlayers were thermally deposited in situ in UHV onto substrate surfaces. The island-like organic deposits were excluded from the analysis so that only uniform organic deposits were considered. In the cases of polycrystalline Au, Si(1 0 0) and Ge(1 1 1) substrates the AES peaks of the substrate material attenuated down to the zero noise level upon the increase of the CuPc film thickness of 8-10 nm. The peaks corresponding to oxygen atoms in the case of SiO(2) substrate, and to atoms from the ZnO, GaAs and CdS substrates were clearly registered in the AES spectra of the 8-10 nm thick CuPc deposits. The relative concentration of the substrate atomic components diffused into the film was different from their relative concentration at the pure substrate surface. The concentration of the substrate dopant atoms in the CuPc film was estimated as one atom per one CuPc molecule. Using the target current electron spectroscopy, it was shown that the substrate atoms admixed in the CuPc film account for the appearance of a new peak in the density of unoccupied electronic states. Formation of intermediate TCS spectra until the CuPc deposit reaches 2-3 nm was observed in the cases of GaAs(1 0 0), ZnO(0 0 0 1), Ge(1 1 1) surfaces. The intermediate spectra show a less pronounced peak structure different from the one typical for the CuPc films. It was suggested that the intermediate layer was formed by the CuPc molecules fully or partially decomposed due to the interaction with the relatively reactive semiconductor surfaces. Copyright © 2010 Elsevier B.V. All rights reserved.

  14. CASAS: A Smart Home in a Box.

    Science.gov (United States)

    Cook, Diane J; Crandall, Aaron S; Thomas, Brian L; Krishnan, Narayanan C

    2013-07-01

    While the potential benefits of smart home technology are widely recognized, a lightweight design is needed for the benefits to be realized at a large scale. We introduce the CASAS "smart home in a box", a lightweight smart home design that is easy to install and provides smart home capabilities out of the box with no customization or training. We discuss types of data analysis that have been performed by the CASAS group and can be pursued in the future by using this approach to designing and implementing smart home technologies.

  15. Experimental realization of the quantum box problem

    International Nuclear Information System (INIS)

    Resch, K.J.; Lundeen, J.S.; Steinberg, A.M.

    2004-01-01

    The three-box problem is a gedankenexperiment designed to elucidate some interesting features of quantum measurement and locality. A particle is prepared in a particular superposition of three boxes, and later found in a different (but nonorthogonal) superposition. It was predicted that appropriate 'weak' measurements of particle position in the interval between preparation and post-selection would find the particle in two different places, each with certainty. We verify these predictions in an optical experiment and address the issues of locality and of negative probability

  16. Interfaces habladas

    Directory of Open Access Journals (Sweden)

    María Teresa Soto Sanfiel

    2012-04-01

    Full Text Available Este artículo describe y piensa al fenómeno de las Interfaces habladas (IH desde variados puntos de vista y niveles de análisis. El texto se ha concebido con los objetivos específicos de: 1.- procurar una visión panorámica de aspectos de la producción y consumo comunicativo de las IH; 2.- ofrecer recomendaciones para su creación y uso eficaz, y 3.- llamar la atención sobre su proliferación e inspirar su estudio desde la comunicación. A pesar de la creciente presencia de las IF en nues-tras vidas cotidianas, hay ausencia de textos que las caractericen y analicen por sus aspectos comunicativos. El trabajo es pertinente porque el fenómeno significa un cambio respecto a estadios comunica-tivos precedentes con consecuencias en las concepciones intelectuales y emocionales de los usuarios. La proliferación de IH nos abre a nue-vas realidades comunicativas: hablamos con máquinas.

  17. CSciBox: An Intelligent Assistant for Dating Ice and Sediment Cores

    Science.gov (United States)

    Finlinson, K.; Bradley, E.; White, J. W. C.; Anderson, K. A.; Marchitto, T. M., Jr.; de Vesine, L. R.; Jones, T. R.; Lindsay, C. M.; Israelsen, B.

    2015-12-01

    CSciBox is an integrated software system for the construction and evaluation of age models of paleo-environmental archives. It incorporates a number of data-processing and visualization facilities, ranging from simple interpolation to reservoir-age correction and 14C calibration via the Calib algorithm, as well as a number of firn and ice-flow models. It employs modern database technology to store paleoclimate proxy data and analysis results in an easily accessible and searchable form, and offers the user access to those data and computational elements via a modern graphical user interface (GUI). In the case of truly large data or computations, CSciBox is parallelizable across modern multi-core processors, or clusters, or even the cloud. The code is open source and freely available on github, as are one-click installers for various versions of Windows and Mac OSX. The system's architecture allows users to incorporate their own software in the form of computational components that can be built smoothly into CSciBox workflows, taking advantage of CSciBox's GUI, data importing facilities, and plotting capabilities. To date, BACON and StratiCounter have been integrated into CSciBox as embedded components. The user can manipulate and compose all of these tools and facilities as she sees fit. Alternatively, she can employ CSciBox's automated reasoning engine, which uses artificial intelligence techniques to explore the gamut of age models and cross-dating scenarios automatically. The automated reasoning engine captures the knowledge of expert geoscientists, and can output a description of its reasoning.

  18. Electrochemistry of hydrous oxide films

    International Nuclear Information System (INIS)

    Burke, L.D.; Lyons, M.E.G.

    1986-01-01

    The formation, acid-base properties, structural aspects, and transport processes of hydrous oxide films are discussed. Classical and nonclassical theoretical models of the oxide-solution interface are compared. Monolayer oxidation, behavior, and crystal growth of oxides on platinum, palladium, gold, iridium, rhodium, ruthenium, and some non-noble metals, including tungsten, are reviewed and compared

  19. The Ni-YSZ interface

    DEFF Research Database (Denmark)

    Jensen, Karin Vels

    The anode/electrolyte interface in solid oxide fuel cells (SOFC) is known to cause electrical losses. Geometrically simple Ni/yttria-stabilised zirconia (YSZ) interfaces were examined to gain information on the structural and chemical changes occurring during experiments at 1000°C in an atmosphere...... of 97% H2/3% H2O. Electrochemical impedance spectroscopy at open circuit voltage (OCV) and at anodic and cathodic polarisations (100 mV) was performed. A correlation of the electrical data with the structure development and the chemical composition was attempted. Nickel wires with different impurity...... between polarised and non-polarised samples. With pure nickel wires, however, the microstructures depended on the polarisation/non-polarisation conditions. At non-polarised conditions a hill and valley type structure was found. Anodic polarisation produced an up to 1 μm thick interface layer consisting...

  20. Piracy and Box Office Movie Revenues

    DEFF Research Database (Denmark)

    Peukert, Christian; Claussen, Jörg; Kretschmer, Tobias

    2017-01-01

    In this paper we evaluate the heterogeneous effects of online copyright enforcement. We ask whether the unexpected shutdown of the popular file hosting platform Megaupload had a differential effect on box office revenues of wide-release vs. niche movies. Identification comes from a comparison...

  1. Cereal Box Design: An Interdisciplinary Graphics Activity

    Science.gov (United States)

    Fitzgerald, Mike; Tsosie, Teri

    2012-01-01

    The cereal box design activity is intriguing both for its simplicity and the resourcefulness that it can generate in young people. Also, it lends itself to a variety of curriculums. It covers both consumerism and Design for the Environment (DfE) concepts broadly and in depth. The activity introduces a wide range of topics. They include graphic…

  2. PVC posting bags for glove boxes

    International Nuclear Information System (INIS)

    1976-12-01

    This specification covers the materials, measurements and manufacture of unpigmented PVC posting bags for use on glove boxes, together with methods of testing the materials. These bags are used in the handling of radioactive and toxic materials of a hazardous nature and therefore must be of the highest standard of mechanical strength, leak tightness and general finish. (author)

  3. Box and block test in Beninese adults.

    Science.gov (United States)

    Natta, Ditouah Didier Niama; Alagnidé, Etienne; Kpadonou, Toussaint Godonou; Detrembleur, Christine; Lejeune, Thierry M; Stoquart, Gaëtan G

    2015-11-01

    To determine the Box and Block Test norm in a sub-Saharan population and to compare these data with published norms for North American adults. A total of 692 healthy Beninese people, age range 20-85 years, were recruited. These subjects were asked to perform the Box and Block Test with both hands. Box and Block Test scores (mean and standard deviation (SD)) for women and men were, respectively, 81.3 (15.4) and 79 (16.6) for the dominant hand and 73.2 (13.7) and 72 (14.8) for the non-dominant hand. Mean Box and Block Test scores ranged from 89.1 (12.7) for people under the age of 25 years to 55.23 (10.5) for people over the age of 74 years. Manual dexterity was better for women than men, for dominant hand than non-dominant hand, and for younger subjects. In comparison with published results for US subjects, Beninese subjects had better dexterity below the age of 50 years in both sexes for the right hand and worse dexterity over 64 years of age in both sexes for the right hand. Developing and validating outcome scales in Africa will help to improve functional assessment of African populations in clinical practice and research.

  4. Hadron scattering in an asymmetric box

    International Nuclear Information System (INIS)

    Li Xin; Chen Ying; Meng Guozhan; Feng Xu; Gong Ming; He Song; Li Gang; Liu Chuan; Liu Yubin; Ma Jianping; Meng Xiangfei; Shen Yan; Zhang Jianbo

    2007-01-01

    We propose to study hadron-hadron scattering using lattice QCD in an asymmetric box which allows one to access more non-degenerate low-momentum modes for a given volume. The conventional Luescher's formula applicable in a symmetric box is modified accordingly. To illustrate the feasibility of this approach, pion-pion elastic scattering phase shifts in the I = 2, J = 0 channel are calculated within quenched approximation using improved gauge and Wilson fermion actions on anisotropic lattices in an asymmetric box. After the chiral and continuum extrapolation, we find that our quenched results for the scattering phase shifts in this channel are consistent with the experimental data when the three-momentum of the pion is below 300MeV. Agreement is also found when compared with previous theoretical results from lattice and other means. Moreover, with the usage of asymmetric volume, we are able to compute the scattering phases in the low-momentum range (pion three momentum less than about 350MeV in the center of mass frame) for over a dozen values of the pion three-momenta, much more than using the conventional symmetric box with comparable volume

  5. Safety evaluation for packaging CPC metal boxes

    International Nuclear Information System (INIS)

    Romano, T.

    1995-01-01

    This Safety Evaluation for Packaging (SEP) provides authorization for the use of Container Products Corporation (CPC) metal boxes, as described in this document, for the interarea shipment of radioactive contaminated equipment and debris for storage in the Central Waste Complex (CWC) or T Plant located in the 200 West Area. Authorization is granted until November 30, 1995. The CPC boxes included in this SEP were originally procured as US Department of Transportation (DOT) Specification 7A Type A boxes. A review of the documentation provided by the manufacturer revealed the documentation did not adequately demonstrate compliance to the 4 ft drop test requirement of 49 CFR 173.465(c). Preparation of a SEP is necessary to document the equivalent safety of the onsite shipment in lieu of meeting DOT packaging requirements until adequate documentation is received. The equivalent safety of the shipment is based on the fact that the radioactive contents consist of contaminated equipment and debris which are not dispersible. Each piece is wrapped in two layers of no less than 4 mil plastic prior to being placed in the box which has an additional 10 mil liner. Pointed objects and sharp edges are padded to prevent puncture of the plastic liner and wrapping

  6. Nondestructive assay of boxed radioactive waste

    International Nuclear Information System (INIS)

    Gilles, W.P.; Roberts, R.J.; Jasen, W.G.

    1992-12-01

    This paper describes the problems related to the nondestructive assay (NDA) of boxed radioactive waste at the Hanford Site and how Westinghouse Hanford company (WHC) is solving the problems. The waste form and radionuclide content are described. The characteristics of the combined neutron and gamma-based measurement system are described

  7. Study of WATCH GRB error boxes

    DEFF Research Database (Denmark)

    Gorosabel, J.; Castro-Tirado, A. J.; Lund, Niels

    1995-01-01

    We have studied the first WATCH GRB Catalogue ofγ-ray Bursts in order to find correlations between WATCH GRB error boxes and a great variety of celestial objects present in 33 different catalogues. No particular class of objects has been found to be significantly correlated with the WATCH GRBs....

  8. Reflective Cracking between Precast Prestressed Box Girders

    Science.gov (United States)

    2017-06-30

    The adjacent precast prestressed concrete box-beam bridge is the bridge of choice for short and short-to-medium span bridges. This choice is because of the ease of construction, favorable span-to-depth ratios, aesthetic appeal, and high torsional sti...

  9. Development of the conductive glove for glove box operation. Production of prototypes and their experimental results

    International Nuclear Information System (INIS)

    Kodato, Kazuo; Enuma, Masahito; Kawasaki, Takeshi; Nogami, Yoshitaka; Kaneko, Kazunori; Kimura, Masanori; Yasumori, Tomokazu

    2014-02-01

    The glove used at glove boxes in the nuclear fuel plants is usually made with Chlorosulfonated polyethylene rubber. The rubber is excellent in terms of resistance to radiation because it has no double bond in its main chain of the component, however, it deteriorates rapidly in high dose environment such as direct contact of alpha ray. Plutonium oxide powder is treated in glove boxes at plutonium fuel facilities where the alpha ray from plutonium oxide powder adhered on surface of a glove causes the deterioration of the rubber. Therefore the effective method for prevent of the rapid deterioration is to decrease the amount of adhered powder, and the glove with conductive property which can prevent static electric charge on its surface has been developed and tested. The results showed that the rubber has less adherent property to powder compared with conventional one. (author)

  10. A minicomputer interface for realtime operations: an application to operant conditioning.

    Science.gov (United States)

    Mayor, S J; Wilson, J

    1975-09-01

    A PDP-12 interface was designed, constructed, and tested for realtime imput and output of binary information. Within limits this interface can be used with any peripheral device which operates in the binary mode. In addition to its generality of application the interface features include ease of expansion and low cost. A description of its design and operation is give here is terms of a typical application: the control of behavioral equipment (i.e. "Skinner Boxes") for operant conditioning.

  11. Adaptive Training and Collective Decision Support Based on Man-Machine Interface

    Science.gov (United States)

    2016-03-02

    Based on Man -machine Interface The views, opinions and/or findings contained in this report are those of the author(s) and should not contrued as an...ADDRESS (ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 adaptive training, EEG, man -machine interface...non peer-reviewed journals: Final Report: Adaptive Training and Collective Decision Support Based on Man -machine Interface Report Title The existence of

  12. Ballast system for maintaining constant pressure in a glove box

    Science.gov (United States)

    Shlichta, Paul J.

    1989-09-01

    A ballast system is disclosed for a glove box including a fixed platform on which is mounted an inflatable bag on top of which resides a cover and a weight. The variable gas volume of the inflatable bag communicates with that of the glove box via a valved tube. The weight and the gas volume are selected to maintain a relatively constant pressure in the glove box despite variations in the glove box volume while avoiding the use of complicated valving apparatus.

  13. 49 CFR 178.514 - Standards for plywood boxes.

    Science.gov (United States)

    2010-10-01

    ... identification code for a plywood box is 4D. (b) Construction requirements for plywood boxes are as follows: (1..., commercially dry and free from defects that would materially lessen the strength of the box. The strength of the material used and the method of construction must be appropriate to the capacity and intended use...

  14. 49 CFR 230.103 - Tender roller bearing journal boxes.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Tender roller bearing journal boxes. 230.103... Locomotives and Tenders Running Gear § 230.103 Tender roller bearing journal boxes. Tender roller bearing journal boxes shall be maintained in a safe and suitable condition. ...

  15. 49 CFR 230.102 - Tender plain bearing journal boxes.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Tender plain bearing journal boxes. 230.102... Locomotives and Tenders Running Gear § 230.102 Tender plain bearing journal boxes. Plain bearing journal boxes... expected to damage the bearing; or have a detrimental effect on the lubrication of the journal and bearing...

  16. Using Origami Boxes to Explore Concepts of Geometry and Calculus

    Science.gov (United States)

    Wares, Arsalan

    2011-01-01

    The purpose of this classroom note is to provide an example of how a simple origami box can be used to explore important concepts of geometry and calculus. This article describes how an origami box can be folded, then it goes on to describe how its volume and surface area can be calculated. Finally, it describes how the box could be folded to…

  17. 47 CFR 90.241 - Radio call box operations.

    Science.gov (United States)

    2010-10-01

    ... remains on for a period in excess of three minutes. The automatic cutoff system must be designed so the... Public Safety Pool for highway call box systems subject to the following requirements: (1) Call box... effective radiated power (ERP). (3) The height of a call box antenna may not exceed 6.1 meters (20 feet...

  18. 30 CFR 18.49 - Connection boxes on machines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Connection boxes on machines. 18.49 Section 18..., AND APPROVAL OF MINING PRODUCTS ELECTRIC MOTOR-DRIVEN MINE EQUIPMENT AND ACCESSORIES Construction and Design Requirements § 18.49 Connection boxes on machines. Connection boxes used to facilitate replacement...

  19. Water-cooled target-box design at LAMPF

    International Nuclear Information System (INIS)

    Grisham, D.; Lambert, J.

    1983-01-01

    The target boxes in the main experimental beam line (Line A) at the Clinton P. Anderson Meson Physics Facility (LAMPF) have operated since 1976. A program of replacing the boxes is underway. This paper will present past history, design considerations, calculational results and the final box design

  20. Grey-Box Modelling of Pharmacokinetic /Pharmacodynamic Systems

    DEFF Research Database (Denmark)

    Tornøe, Christoffer Wenzel; Jacobsen, Judith L.; Pedersen, Oluf

    2004-01-01

    Grey-box pharmacokinetic/pharmacodynamic (PK/PD) modelling is presented as a promising way of modelling PK/PD systems. The concept behind grey-box modelling is based on combining physiological knowledge along with information from data in the estimation of model parameters. Grey-box modelling...