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Sample records for oriented mgb2 thin

  1. Laser-induced thermoelectric voltage in normal state MgB2 thin films

    International Nuclear Information System (INIS)

    Zhao Songqing; Zhou Yueliang; Zhao Kun; Wang Shufang; Chen Zhenghao; Jin Kuijuan; Lue Huibin; Cheng Bolin; Yang Guozhen

    2006-01-01

    Laser-induced voltage has been observed in c-axis oriented MgB 2 thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB 2

  2. Microwave surface impedance of MgB2 thin film

    International Nuclear Information System (INIS)

    Jin, B B; Klein, N; Kang, W N; Kim, Hyeong-Jin; Choi, Eun-Mi; Lee, Sung-I K; Dahm, T; Maki, K

    2003-01-01

    The microwave surface impedance Z s = R s + jωμ 0 λ was measured with dielectric resonator techniques for two c-axis-oriented MgB 2 thin films. The temperature dependence of the penetration depth λ measured with a sapphire resonator at 17.93 GHz can be well fitted from 5 K close to T c by the standard BCS integral expression assuming the reduced energy gap Δ(0)/kT c to be as low as 1.13 and 1.03 for the two samples. From these fits the penetration depth at zero temperatures was determined to be 102 nm and 107 nm, respectively. The results clearly indicate the s-wave nature of the order parameter. The temperature dependence of surface resistance R s , measured with a rutile dielectric resonator, shows an exponential behaviour below about T c /2 with a reduced energy gap being consistent with the one determined from the λ data. The R s value at 4.2 K was found to be as low as 19 μΩ at 7.2 GHz, which is comparable with that of a high-quality high-temperature thin film of YBa 2 Cu 3 O 7 . A higher-order mode at 17.9 GHz was employed to determine the frequency f dependence of R s ∝ f n(T) . Our results revealed a decrease of n with increasing temperature ranging from n = 2 below 8 K to n 1 from 13 to 34 K

  3. Scaling behavior of mixed-state hall effect in MgB2 thin films

    International Nuclear Information System (INIS)

    Jung, Soon-Gil; Seong, W.K.; Kang, W.N.; Choi, Eun-Mi; Kim, Heon-Jung; Lee, Sung-Ik; Kim, Hyeong-Jin; Kim, H.C.

    2006-01-01

    The Hall resistivity (ρ xy ) and the longitudinal resistivity (ρ xx ) in c-axis-oriented superconducting MgB 2 thin films have been investigated in extended fields up to 18T. We have observed a scaling behavior between the Hall resistivity and the longitudinal resistivity, ρ xy =Aρ xx β , where the exponent (β) is observed to be independent of the temperatures and the magnetic fields. For a wide magnetic field region from 1 to 18T and a wide temperature region from 10 to 28K, a universal power law with β=2.0+/-0.1 was observed in c-axis-oriented MgB 2 thin films. These results can be well interpreted by using recent models

  4. MgB2 thin films on silicon nitride substrates prepared by an in situ method

    International Nuclear Information System (INIS)

    Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S

    2004-01-01

    Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

  5. MgB2 thin films by hybrid physical-chemical vapor deposition

    International Nuclear Information System (INIS)

    Xi, X.X.; Pogrebnyakov, A.V.; Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C.; Zhuang, C.G.; Li, Qi; Lamborn, D.R.; Redwing, J.M.; Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C.; Chen, Y.B.; Tian, W.; Pan, X.Q.; Cybart, S.A.; Dynes, R.C.

    2007-01-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB 2 thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB 2 films. The epitaxial pure MgB 2 films grown by HPCVD show higher-than-bulk T c due to tensile strain in the films. The HPCVD films are the cleanest MgB 2 materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB 2 . The carbon-alloyed HPCVD films demonstrate record-high H c2 values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB 2 Josephson junctions

  6. Growth of high quality large area MgB2 thin films by reactive evaporation

    OpenAIRE

    Moeckly, Brian H.; Ruby, Ward S.

    2006-01-01

    We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...

  7. Progress in the deposition of MgB2 thin films

    International Nuclear Information System (INIS)

    Xi, X X; Pogrebnyakov, A V; Zeng, X H; Redwing, J M; Xu, S Y; Li, Qi; Liu, Zi-Kui; Lettieri, J; Vaithyanathan, V; Schlom, D G; Christen, H M; Zhai, H Y; Goyal, A

    2004-01-01

    An MgB 2 thin film deposition technology is the first critical step in the development of superconducting electronics utilizing the 39 K superconductor. It turned out to be a challenging task due to the volatility of Mg and phase stability of MgB 2 , the low sticking coefficients of Mg at elevated temperatures, and the reactivity of Mg with oxygen. A brief overview of current deposition techniques is provided here from a thermodynamic perspective, with an emphasis on a very successful technique for high quality in situ epitaxial MgB 2 films, the hybrid physical-chemical vapour deposition. Examples of heterostructures of MgB 2 with other materials are also presented

  8. Critical current density of MgB2 thin films and the effect of interface pinning

    International Nuclear Information System (INIS)

    Choi, Eun-Mi; Gupta, S K; Sen, Shashwati; Lee, Hyun-Sook; Kim, Hyun-Jung; Lee, Sung-Ik

    2004-01-01

    Preferentially oriented MgB 2 thin films with c-axis normal to the surface have been prepared and characterized for microstructure and transport properties. The magnetic field dependence of superconducting critical current density J c has been determined from the magnetization hysteresis (M-H) loops at various temperatures using the Bean's critical state model. High J c of these films show their potential for applications. We have also measured the angular dependences of J c . The angular dependence is seen to be in agreement with the anisotropic Ginzburg-Landau model except that at angles close to the ab plane, increased pinning due to film-substrate interaction is observed. The angular range where interface pinning is effective has been determined by measurement of asymmetry in dissipation on reversal of current for fields applied at angles close to the ab plane

  9. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    Directory of Open Access Journals (Sweden)

    Jean-Baptiste Laloë

    2011-01-01

    Full Text Available Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a of 39 K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

  10. Scanning tunneling spectroscopy on neutron irradiated MgB2 thin films

    International Nuclear Information System (INIS)

    Di Capua, Roberto; Salluzzo, Marco; Vaglio, Ruggero; Ferdeghini, Carlo; Ferrando, Valeria; Putti, Marina; Xi Xiaoxing; Aebersold, Hans U.

    2007-01-01

    Neutron irradiation was performed on MgB 2 thin films grown by hybrid physical chemical vapor deposition. Samples irradiated with different neutron fluences, having different critical temperatures, were studied by scanning tunneling spectroscopy in order to investigate the effect of the introduced disorder on the superconducting and spectroscopic properties. A monotonic increase of the π gap with increasing disorder was found

  11. Pinning enhancement in MgB2 superconducting thin films by ...

    Indian Academy of Sciences (India)

    The magnetic field dependence of the critical current density Jc was calculated from the M–H loops and magnetic field dependence of ... MgB2 thin film; Fe2O3 nanoparticles; critical current density; r-plane Al2O3 substrate. 1. Introduction. The discovery of ... It was thought that from these cal- culations, one can choose an ...

  12. Enhancement of Jc of MgB2 thin films by introduction of oxygen during deposition

    International Nuclear Information System (INIS)

    Mori, Zon; Doi, Toshiya; Hakuraku, Yoshinori; Kitaguchi, Hitoshi

    2006-01-01

    The introduction of various pinning center are examined as the effective means for improvement of J c of MgB 2 thin films. We have investigated the effects of introduction of oxygen during deposition on the superconducting properties of MgB 2 thin films. MgB 2 thin films were prepared on polished sapphire C(0001) single crystal substrates by using electron beam evaporation technique (EB) without any post-annealing. The background pressure was less than 1.3x10 -6 Pa. The evaporation flux ratio of Mg was set at 30 times as high as that of B, and the growth rate of MgB 2 film was 1nm/s. The film thickness was typically 300nm at 5min deposition. The substrate temperature was 245 deg. C. Under these conditions, we controlled the oxygen partial pressure (P O 2 ) within the range from 1.3x10 -6 to 1.3x10 -3 Pa by using a quadrapole mass spectrometer. Although T c of deposited thin film decreased in order of P O 2 , ΔM in the magnetization hysteresis loops measured from 0 to 6T at 4.2K increased up to 1.3x10 -5 . On the other hand, thin film prepared under P O 2 of 1.3x10 -3 Pa does not show superconducting transition. Between these films, there is no difference in the crystal structure from X-ray diffraction (XRD). These results suggest that the pinning center in the thin films increased by introduction of oxygen. Extremely small amount of oxygen introduction has enabled the control of growth of oxide

  13. The effects of Fe2O3 nanoparticles on MgB2 superconducting thin films

    International Nuclear Information System (INIS)

    Koparan, E.T.; Sidorenko, A.; Yanmaz, E.

    2013-01-01

    Full text: Since the discovery of superconductivity in binary MgB 2 compounds, extensive studies have been carried out because of its excellent properties for technological applications, such as high transition temperature (T c = 39 K), high upper critical field (H c2 ), high critical current density (J c ). Thin films are important for fundamental research as well as technological applications of any functional materials. Technological applications primarily depend on critical current density. The strong field dependence of J c for MgB 2 necessitates an enhancement in flux pinning performance in order to improve values in high magnetic fields. An effective way to improve the flux pinning is to introduce flux pinning centers into MgB 2 through a dopant having size comparable to the coherence length of MgB 2 . In this study, MgB 2 film with a thickness of about 600 nm was deposited on the MgO (100) single crystal substrate using a 'two-step' synthesis technique. Firstly, deposition of boron thin film was carried out by rf magnetron sputtering on MgO substrates and followed by a post deposition annealing at 850 degrees Celsius in magnesium vapour. In order to investigate the effect of Fe 2 O 3 nanoparticles on the structural and magnetic properties of films, MgB 2 films were coated with different concentrations of Fe 2 O 3 nanoparticles by a spin coating process. The effects of different concentrations of ferromagnetic Fe 2 O 3 nanoparticles on superconducting properties of obtained films were carried out by using structural (XRD, SEM, AFM), electrical (R-T) and magnetization (M-H, M-T and AC Susceptibility) measurements. It was calculated that anisotropic coefficient was about γ = 1.2 and coherence length of 5 nm for the uncoated film. As a result of coherence length, the appropriate diameters of Fe 2 O 3 nanoparticles were found to be 10 nm, indicating that these nanoparticles served as the pinning centers. Based on the data obtained from this study, it can be

  14. Stabilization of the dissipation-free current transport in inhomogeneous MgB2 thin films

    International Nuclear Information System (INIS)

    Treiber, S.; Stahl, C.; Schütz, G.; Soltan, S.; Albrecht, J.

    2014-01-01

    Highlights: • We investigate transport properties of inhomogeneous MgB 2 films. • An inhomogeneous microstructure stabilizes supercurrents. • Vortex pinning forces and energies have been analyzed experimentally. • In inhomogeneous films the increase of the pinning energy is responsible for stable supercurrents. - Abstract: In type-II superconductors at T = 0 the critical current density is determined by the pinning of flux lines. Considering an arbitrarily shaped energy landscape the pinning force at each pinning site is given by the derivative of the flux line energy with respect to the considered direction. At finite temperatures, in addition, thermal activation can lead to a depinning of flux lines. The governing property in this case is the depth of the corresponding pinning potential, i.e. the pinning energy. We show a detailed analysis of both pinning forces and pinning energies of MgB 2 films with inhomogeneous microstructure. We show that a pronounced increase of the pinning energy is responsible for the significantly enhanced stability of the dissipation-free current transport in thin inhomogeneous MgB 2 films. This is found even if the corresponding pinning forces are small

  15. Nanostructure characterization of Ni and B layers as artificial pinning centers in multilayered MgB2/Ni and MgB2/B superconducting thin films

    International Nuclear Information System (INIS)

    Sosiati, H.; Hata, S.; Doi, T.; Matsumoto, A.; Kitaguchi, H.; Nakashima, H.

    2013-01-01

    Highlights: ► Nanostructure characterization of Ni and B layers as artificial pinning centers (APCs). ► Relationship between nanostructure and J c property. ► Enhanced J c in parallel field by parallel APCs within the MgB 2 film. -- Abstract: Research on the MgB 2 /Ni and MgB 2 /B multilayer films fabricated by an electron beam (EB) evaporation technique have been extensively carried out. The critical current density, J c of MgB 2 /Ni and MgB 2 /B multilayer films in parallel fields has been suggested to be higher than that of monolayer MgB 2 film due to introducing the artificial pinning centers of nano-sized Ni and B layers. Nanostructure characterization of the artificial pinning centers in the multilayer films were examined by transmission electron microscopy (TEM) and scanning TEM (STEM-energy dispersive X-ray spectroscopy (STEM-EDS))–EDS to understand the mechanism of flux pinning. The growth of columnar MgB 2 grains along the film-thickness direction was recognized in the MgB 2 /Ni multilayer film, but not in the MgB 2 /B multilayer film. Nano-sized Ni layers were present as crystalline epitaxial layers which is interpreted that Ni atoms might be incorporated into the MgB 2 lattice to form (Mg,Ni)B 2 phase. On the other hand, nano-sized B layers were amorphous layers. Crystalline (Mg,Ni)B 2 layers worked more effectively than amorphous B-layers, providing higher flux-pinning force that resulted in higher J c of the MgB 2 /Ni multilayer film than the MgB 2 /B multilayer film

  16. Growth of high-quality large-area MgB2 thin films by reactive evaporation

    International Nuclear Information System (INIS)

    Moeckly, B H; Ruby, W S

    2006-01-01

    We report a new in situ reactive deposition thin film growth technique for the production of MgB 2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB 2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB 2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials up to 4 inch in diameter. This technique allows growth of double-sided, large-area films in the intermediate temperature range of 400-600 deg. C. These films are clean, well-connected, and consistently display T c values of 38-39 K with low resistivity and residual resistivity values. They are also robust and uncommonly stable upon exposure to atmosphere and water. (rapid communication)

  17. Hall conductivity and the vortex phase in MgB2 thin films

    International Nuclear Information System (INIS)

    Jung, Soon-Gil; Seong, W K; Huh, Ji Young; Lee, T G; Kang, W N; Choi, Eun-Mi; Kim, Heon-Jung; Lee, Sung-Ik

    2007-01-01

    In a MgB 2 thin film superconductor, we have found that Hall conductivity (σ xy ) is described by the sum of two terms, σ xy = C 1 /H+C 3 H, where C 1 and C 3 are independent of the magnetic fields and have positive values. C 1 is observed to be proportional to (1-t) n with n = 4.2, where t is the reduced temperature (T/T c ), and C 3 is weakly dependent on the temperature. These results are consistent with those of the overdoped La 2-x Sr x CuO 4 superconductors. Based on Hall angle data, we obtained a vortex phase diagram with three regions, vortex-solid, crossover, and vortex-liquid regions in the H-T plane

  18. Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

    International Nuclear Information System (INIS)

    Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

    2005-01-01

    The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

  19. Preparation of high quality superconducting thin MgB2 films for electronics

    International Nuclear Information System (INIS)

    Surdu, Andrei; Zdravkov, Vladimir; Sidorenko, Anatolie; Rossolenko, Anna; Ryazanov, Valerii; Bdikin, Igor; Kroemer, Oliver; Nold, Eberhard; Koch, Thomas; Schimmel, Thomas

    2007-01-01

    In this work we report the growth of high-Tc MgB 2 smooth films which are prepared in a two-step process: 1) deposition of the precursor films and 2) their annealing in Mg vapor with a specially designed, reusable reactor. Our method opens perspectives for the use of MgB 2 films in microelectronics, especially for high-frequency applications. (authors)

  20. Investigation of the resistive transition of MgB2 thin film through current noise

    International Nuclear Information System (INIS)

    Gandini, C; Rajteri, M; Portesi, C; Monticone, E; Masoero, A; Mazzetti, P

    2006-01-01

    In this paper we present measurements concerning the current noise produced during the resistive transition in a MgB 2 polycrystalline thin film. The power spectrum of the current noise, observed when the temperature is slowly changed across its critical value, presents a large electrical noise of the 1/f n type (n ≅ 3) over a quite wide range of frequencies. This noise may be considered as generated by the abrupt creation of resistive strips across the specimen constituted by grains which have undergone the resistive transition. A computer model that takes into account fluctations of the grain critical currents and of the number of grain per strips, has been developed to simulate the resistive transition and to evaluate the noise power spectrum. When the temperature is incresed and reaches its critical value, resistive strips are formed according to a percolative process, giving rise to resistance steps which are at the origin of the noise. The theoretical results obtained by this model are in good agreement, concerning both the shape and intensity of the noise power spectrum, with the experimental data directly measured on the specimen

  1. Effects of α-particle beam irradiation on superconducting properties of thin film MgB2 superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sang Bum; Duong, Pham van; Ha, Dong Hyup; Oh, Young Hoon; Kang, Won Nam; Chai, Jong Seo [Sungkunkwan Univeversity, Suwon (Korea, Republic of); Hong, Seung Pyo; Kim, Ran Young [Kore Institute of Radiological and Medical Science, Seoul (Korea, Republic of)

    2016-06-15

    Superconducting properties of thin film MgB2 superconductors irradiated with 45 MeV α-particle beam were studied. After the irradiation, enhancement of the critical current density and pinning force was observed, scaling close to strong pinning formula. Double logarithmic plots of the maximum pinning force density with irreversible magnetic field show a power law behavior close to carbon-doped MgB2 film or polycrystals. Variation of normalized pinning force density in the reduced magnetic field suggests scaling formulas for strong pinning mechanism like planar defects. We also observed a rapid decay of critical current density as the vortex lattice constant decreases, due to the strong interaction between vortices and increasing magnetic field.

  2. The microwave surface impedance of MgB2 thin films

    International Nuclear Information System (INIS)

    Purnell, A J; Zhukov, A A; Nurgaliev, T; Lamura, G; Bugoslavsky, Y; Lockman, Z; MacManus-Driscoll, J L; Zhai, H Y; Christen, H M; Paranthaman, M P; Lowndes, D H; Jo, M H; Blamire, M G; Hao, Ling; Gallop, J C; Cohen, L F

    2003-01-01

    In this paper we present the results of measurements of the microwave surface impedance of a powder sample and two films of MgB 2 . The powder sample has a T c = 39 K and the films have T c = 29 K and 38 K. These samples show different temperature dependences of the field penetration depth. Over a period of six months, the film with T c = 38 K degraded to a T c of 35 K. We compare the results on all samples with data obtained elsewhere and discuss the implications as far as is possible at this stage

  3. MgB2 thin-film bolometer for applications in far-infrared instruments on future planetary missions

    International Nuclear Information System (INIS)

    Lakew, B.; Aslam, S.; Brasunas, J.; Cao, N.; Costen, N.; La, A.; Nguyen, L.; Stevenson, T.; Waczynski, A.

    2012-01-01

    A SiN membrane based MgB 2 thin-film bolometer, with a non-optimized absorber, has been fabricated that shows an electrical noise equivalent power of 2.56 × 10 -13 W/√Hz operating at 30 Hz and a responsivity of 702 kV/W. It is predicted that with the inclusion of a gold black absorber that an optical specific detectivity of 8.3 × 10 10 cm/√Hz/W at an operational frequency of 10 Hz, can be realized for integration into future planetary exploration instrumentation where high sensitivity is required in the 17-250 μm spectral wavelength range.

  4. Magnetic anisotropy of thin sputtered MgB2 films on MgO substrates in high magnetic fields

    Directory of Open Access Journals (Sweden)

    Savio Fabretti

    2014-03-01

    Full Text Available We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T = 0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.

  5. MgB2 Thin-Film Bolometer for Applications in Far-Infrared Instruments on Future Planetary Missions

    Science.gov (United States)

    Lakew, B.; Aslam, S.; Brasunas, J.; Cao, N.; Costen, N.; La, A.; Stevenson, T.; Waczynski, A.

    2012-01-01

    A SiN membrane based MgB2 thin-film bolometer, with a non-optimized absorber, has been fabricated that shows an electrical noise equivalent power of 256 fW/square root Hz operating at 30 Hz in the 8.5 - 12.35 micron spectral bandpass. This value corresponds to an electrical specific detectivity of 7.6 x 10(exp 10) cm square root Hz/W. The bolometer shows a measured blackbody (optical) specific detectivity of 8.8 x 10(exp 9) cm square root Hz/W, with a responsivity of 701.5 kV/W and a first-order time constant of 5.2 ms. It is predicted that with the inclusion of a gold black absorber that a blackbody specific detectivity of 6.4 x 10(exp 10) cm/square root Hz/W at an operational frequency of 10 Hz, can be realized for integration into future planetary exploration instrumentation where high sensitivity is required in the 17 - 250 micron spectral wavelength range.

  6. Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields

    Directory of Open Access Journals (Sweden)

    Andrei E. Surdu

    2011-12-01

    Full Text Available The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB2 thin films on the critical current density was studied in comparison with the case of uncoated MgB2 thin films. We calculated the superconducting critical current densities (Jc from the magnetization hysteresis (M–H curves for both sets of samples and found that the Jc value of FeO-coated films is higher at all fields and temperatures than the Jc value for uncoated films, and that it decreases to ~105 A/cm2 at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.

  7. Enhanced J c property in nano-SiC doped thin MgB2/Fe wires by a modified in situ PIT process

    International Nuclear Information System (INIS)

    Jiang, C.H.; Nakane, T.; Hatakeyama, H.; Kumakura, H.

    2005-01-01

    A modified in situ PIT process, which included a short time pre-annealing and intermediate drawing step in the conventional in situ PIT process, was employed to fabricate thin round MgB 2 /Fe wires from MgH 2 and B powders. The pores and cracks resulted from the MgH 2 decomposition during the pre-annealing were effectively eliminated by the intermediate drawing step, which subsequently increased the core density and J c property of final heat treated wires. A higher reduction rate after the pre-annealing led to a larger enhancement in J c within this study. The reproducibility of our new process on the J c improvement in MgB 2 wires was confirmed in two series of wires doped with 5 mol% or 10 mol% nano-SiC particles separately

  8. Deposition of MgB2 Thin Films on Alumina-Buffered Si Substrates by using Hybrid Physical-Chemical Vapor Deposition Method

    International Nuclear Information System (INIS)

    Lee, T. G.; Park, S. W.; Seong, W. K.; Huh, J. Y.; Jung, S. G.; Kang, W. N.; Lee, B. K.; An, K. S.

    2008-01-01

    [ MgB 2 ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures 500 - 600 degrees C and under the reactor pressures of 25 - 50 degrees C. There are some interfacial reactions in the as-grown films with impurities of mostly Mg 2 Si, MgAl 2 O 4 , and other phases. The T c 's of MgB 2 films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly Mg 2 Si impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

  9. MgB2 energy gap determination by scanning tunnelling spectroscopy

    International Nuclear Information System (INIS)

    Heitmann, T W; Bu, S D; Kim, D M; Choi, J H; Giencke, J; Eom, C B; Regan, K A; Rogado, N; Hayward, M A; He, T; Slusky, J S; Khalifah, P; Haas, M; Cava, R J; Larbalestier, D C; Rzchowski, M S

    2004-01-01

    We report scanning tunnelling spectroscopy (STS) measurements of the gap properties of both ceramic MgB 2 and c-axis oriented epitaxial MgB 2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunnelling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-insulator-superconductor (N-I-S) junctions. We find a gap δ = 2.2-2.8 meV, with spectral features and temperature dependence that are consistent between S-I-S junction types. In addition, we observe evidence of a second, larger gap, δ 7.2 meV, consistent with a proposed two-band model

  10. MgB2 superconducting wires basics and applications

    CERN Document Server

    2016-01-01

    The compendium gives a complete overview of the properties of MgB2 (Magnesium Diboride), a superconducting compound with a transition temperature of Tc = 39K, from the fundamental properties to the fabrication of multifilamentary wires and to the presentation of various applications. Written by eminent researchers in the field, this indispensable volume not only discusses superconducting properties of MgB2 compounds, but also describes known preparation methods of thin films and of bulk samples obtained under high pressure methods. A unique selling point of the book is the detailed coverage of various applications based on MgB2, starting with MRI magnets and high current cables, cooled by Helium (He) vapor. High current cables cooled by liquid hydrogen are also highlighted as an interesting alternative due to the shrinking He reserves on earth. Other pertinent subjects comprise permanent magnets, ultrafine wires for space applications and wind generator projects.

  11. Insulator layer formation in MgB2 SIS junctions

    International Nuclear Information System (INIS)

    Shimakage, H.; Tsujimoto, K.; Wang, Z.; Tonouchi, M.

    2005-01-01

    The dependence of current-voltage characteristics on thin film deposition conditions was investigated using MgB 2 /AlN/NbN SIS junctions. By increasing the substrate temperature in AlN insulator deposition, the current density decreased and the normal resistance increased. The results indicated that an additional insulator layer between the MgB 2 and AlN formed, either before or during the AlN deposition. The thickness of the additional insulator layer was increased with an increase in the AlN deposition temperature. From the dependence of current density on the thickness of AlN in low temperature depositions, the thickness of the additional insulator layer was estimated to be 1-1.5 nm when the AlN insulator was deposited from 0.14 to 0.7 nm. Moreover, with the current density of MgB 2 /AlN/MgB 2 SIS junctions, further insulator layer formation was confirmed

  12. Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB2

    International Nuclear Information System (INIS)

    Zhao, Y.; Ke, C.; Cheng, C.H.; Feng, Y.; Yang, Y.; Munroe, P.

    2010-01-01

    Nano-diamond and titanium concurrently doped MgB 2 nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J c -H behavior and pinning force scaling features of MgB 2 have been investigated. Although T c was slightly depressed, J c of MgB 2 have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J c value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB 2 , a unique nanocomposite in which TiB 2 forms a thin layer surrounding MgB 2 grains whereas nano-diamond particles were wrapped inside the MgB 2 grains. Besides, nano-diamond doping results in a high density stress field in the MgB 2 samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB 2 system.

  13. Application of superconducting magnesium diboride (MGB2) in superconducting radio frequency cavities

    Science.gov (United States)

    Tan, Teng

    The superconductivity in magnesium diboride (MgB2) was discovered in 2001. As a BCS superconductor, MgB2 has a record-high Tc of 39 K, high Jc of > 107 A/cm2 and no weak link behavior across the grain boundary. All these superior properties endorsed that MgB2 would have great potential in both power applications and electronic devices. In the past 15 years, MgB2 based power cables, microwave devices, and commercial MRI machines emerged and the next frontier are superconducting radio frequency (SRF) cavities. SRF cavities are one of the leading accelerator technologies. In SRF cavities, applied microwave power generates electrical fields that accelerate particle beams. Compared with other accelerator techniques, SRF cavity accelerators feature low loss, high acceleration gradients and the ability to accelerate continuous particle beams. However, current SRF cavities are made from high-purity bulk niobium and work at 2 K in superfluid helium. The construction and operational cost of SRF cavity accelerators are very expensive. The demand for SRF cavity accelerators has been growing rapidly in the past decade. Therefore, a lot of effort has been devoted to the enhancement of the performance and the reduction of cost of SRF cavities. In 2010, an acceleration gradient of over 50 MV/m has been reported for a Nb-based SRF cavity. The magnetic field at the inner surface of such a cavity is ~ 1700 Oe, which is close to the thermodynamic critical field of Nb. Therefore, new materials and technologies are required to raise the acceleration gradient of future SRF cavity accelerators. Among all the proposed approaches, using MgB2 thin films to coat the inner surface of SRF cavities is one of the promising tactics with the potential to raise both the acceleration gradient and the operation temperature of SRF cavity accelerators. In this work, I present my study on MgB2 thin films for their application in SRF cavities. C-epitaxial MgB2 thin films grown on SiC(0001) substrates

  14. Fluctuations on the magnetic response of superconducting thin films of Nb and MgB2 - Percolation limit of vortex mobility

    International Nuclear Information System (INIS)

    Colauto, F.; Orgiani, P.; Xi, X.X.; Kang, W.N.; Choi, E.M.; Kim, H.J.; Lee, S.I.; Patino, E.; Blamire, M.G.; Ortiz, W.A.

    2007-01-01

    Application of a magnetic field of sufficient intensity orthogonal to superconducting thin films may produce dendritic patterns, where penetrated and Meissner regions coexist. The dendritic mode can be detected by AC-susceptibility measurements, since fingers penetrated by the magnetic field act as intergranular material. Measurements of the AC-susceptibility have the conventional shape for smaller values of magnitude and frequency of the excitation field. However, for frequencies in the vicinity of 1 kHz and AC-fields around 3 Oe and above, the curve deviates from its canonical behavior and fluctuates, the excursion becoming wider as the amplitude is increased. In this contribution we present results of a systematic study conducted to determine the threshold between smooth and fluctuating regimes of the magnetic response of the film, which is interpreted as the percolation limit of vortex mobility throughout the sample

  15. Electronic structure of MgB2

    Indian Academy of Sciences (India)

    Abstract. Results of ab initio electronic structure calculations on the compound MgB2 using the. FPLAPW method employing GGA for the exchange-correlation energy are presented. Total energy minimization enables us to estimate the equilibrium volume, c/a ratio and the bulk modulus, all of which are in excellent ...

  16. Electronic structure of MgB 2

    Indian Academy of Sciences (India)

    Results of ab initio electronic structure calculations on the compound MgB2 using the FPLAPW method employing GGA for the exchange-correlation energy are presented. Total energy minimization enables us to estimate the equilibrium volume, / ratio and the bulk modulus, all of which are in excellent agreement with ...

  17. Properties of hot pressed MgB2/Ti tapes

    International Nuclear Information System (INIS)

    Kovac, P.; Husek, I.; Melisek, T.; Fedor, J.; Cambel, V.; Morawski, A.; Kario, A.

    2009-01-01

    Hot axial and hot isostatic pressing was applied for single-core MgB 2 /Ti tapes. Differences in transport current density, n-exponents and critical current anisotropy are discussed and related to the grain connectivity influenced by pressing. The magnetic Hall probe scanning measurements allowed observing the isolated regions for axially hot pressed sample attributed to the longitudinally oriented cracks introduced by pressing. The highest current densities were measured for the tape subjected to hot isostatic pressing due to improved connectivity.

  18. MICROSTRUCTURE OF SUPERCONDUCTING MGB(2).

    Energy Technology Data Exchange (ETDEWEB)

    ZHU,Y.; LI,Q.; WU,L.; VOLKOV,V.; GU,G.; MOODENBAUGH,A.R.

    2001-07-12

    Recently, Akimitsu and co-workers [1] discovered superconductivity at 39 K in the intermetallic compound MgB{sub 2}. This discovery provides a new perspective on the mechanism for superconductivity. More specifically, it opens up possibilities for investigation of structure/properties in a new class of materials. With the exceptions of the cuprate and C{sub 60} families of compounds, MgB{sub 2} possesses the highest superconducting transition temperature T{sub c}. Its superconductivity appears to follow the BCS theory, apparently being mediated by electron-phonon coupling. The coherence length of MgB{sub 2} is reported to be longer than that of the cuprates [2]. In contrast to the cuprates, grain boundaries are strongly coupled and current density is determined by flux pinning [2,3]. Presently, samples of MgB{sub 2} commonly display inhomogeneity and porosity on the nanoscale, and are untextured. In spite of these obstacles, magnetization and transport measurements show that polycrystalline samples may carry large current densities circulating across many grains [3,4]. Very high values of critical current densities and critical fields have been recently observed in thin films [5,6]. These attributes suggest possible large scale and electronic applications. The underlying microstructure can be intriguing, both in terms of basic science and in applied areas. Subsequent to the discovery, many papers were published [1-13], most dealing with synthesis, physical properties, and theory. There have yet been few studies of microstructure and structural defects [11, 14]. A thorough understanding of practical superconducting properties can only be developed after an understanding of microstructure is gained. In this work we review transmission electron microscopy (TEM) studies of sintered MgB{sub 2} pellets [14]. Structural defects, including second phase particles, dislocations, stacking faults, and grain boundaries, are analyzed using electron diffraction, electron

  19. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    Directory of Open Access Journals (Sweden)

    Narendra Acharya

    2016-08-01

    Full Text Available In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc and high critical current density (Jc. The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  20. Texture gradients in Fe-sheathed ex situ produced MgB2 tapes

    International Nuclear Information System (INIS)

    Lezza, P; Gladyshevskii, R; Abaecherli, V; Fluekiger, R

    2006-01-01

    Superconducting Fe-sheathed MgB 2 monofilamentary tapes have been fabricated by the powder-in-tube technique, varying the particle size of the starting MgB 2 powder and applying either cold or hot rolling during the last deformation process. Measurements of the critical current density J c with the magnetic field applied parallel or perpendicular to the tape surface revealed a pronounced anisotropy for the cold rolled tapes, which was found to increase with increasing particle size and magnetic field strength. The microstructural origin of the J c anisotropy was confirmed by means of x-ray diffraction performed on the filaments after mechanical removal of the sheath. The local texture was studied in a series of diffraction patterns collected at different distances from the filament centre, removing each time some 25 μm of the filament thickness. In the cold rolled tapes, the average orientation of the MgB 2 grains was found to approach a preferred orientation with the crystallographic c-axis perpendicular to the tape surface, near the interface with the sheath; however, the misalignment angle increased towards the centre of the tape. In the hot rolled tapes, for which no J c anisotropy was observed, the grains were found to be approximately randomly oriented. Roughness measurements performed on the side of the Fe sheath in contact with the MgB 2 filament are in agreement with the difference in texture observed for cold and hot rolled tapes

  1. Formation of polycrystalline MgB2 synthesized by powder in sealed tube method with different initial boron phase

    Science.gov (United States)

    Yudanto, Sigit Dwi; Imaduddin, Agung; Kurniawan, Budhy; Manaf, Azwar

    2018-04-01

    Magnesium diboride, MgB2 is a new high critical temperature superconductor that discovered in the beginning of the 21st century. The MgB2 has a simple crystal structure and a high critical temperature, which can be manufactured in several forms like thin films, tapes, wires including bulk in the large scale. For that reason, the MgB2 has good prospects for various applications in the field of electronic devices. In the current work, we have explored the synthesis of MgB2 polycrystalline using powder in a sealed tube method. Different initial boron phase for the synthesized of MgB2 polycrystalline were used. These were, in addition to magnesium powders, crystalline boron, amorphous boron and combination both of them were respectively fitted in the synthesis. The raw materials were mixed in a stoichiometric ratio of Mg: B=1:2, ground using agate mortar, packed into stainless steel SS304. The pack was then sintered at temperature of 800°C for 2 hours in air atmosphere. Phase formation of MgB2 polycrystalline in difference of initial boron phase was characterized using XRD and SEM. Referring to the diffraction pattern and microstructure observation, MgB2 polycrystalline was formed, and the formation was effective when using the crystalline Mg and fully amorphous B as the raw materials. The critical temperature of the specimen was evaluated by the cryogenic magnet. The transition temperature of the MgB2 specimen synthesized using crystalline magnesium and full amorphous boron is 42.678 K (ΔTc = 0.877 K).

  2. Multiband model for tunneling in MgB2 junctions

    NARCIS (Netherlands)

    Brinkman, Alexander; Golubov, Alexandre Avraamovitch; Rogalla, Horst; Dolgov, O.V.; Kortus, J.; Kong, Y.; Jepsen, O.; Andersen, O.K.

    2002-01-01

    A theoretical model for quasiparticle and Josephson tunneling in multiband superconductors is developed and applied to MgB2-based junctions. The gap functions in different bands in MgB2 are obtained from an extended Eliashberg formalism, using the results of band structure calculations. The

  3. Thickness dependence of J_c (0) in MgB_2 films

    International Nuclear Information System (INIS)

    Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

    2016-01-01

    Highlights: • A serial of MgB_2 superconducting films from 10 nm to 8 µm have been prepared. • T_c and J_c (5 K, 0 T) of films are high. • J_c (5 K, 0 T) reaches its maximum 2.3 × 10"8 A cm"−"2 for 100 nm films. • The relationship between thickness and J_c has been discussed in detail. - Abstract: MgB_2 superconducting films, whose thicknesses range from 10 nm to 8 µm, have been fabricated on SiC substrates by hybrid physical–chemical vapor deposition (HPCVD) method. It is the first time that the T_c and the J_c of MgB_2 films are studied on such a large scale. It is found that with the increasing of thickness, T_c elevates first and then keeps roughly stable except for some slight fluctuations, while J_c (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum J_c (5 K, 0 T) = 2.3 × 10"8 A cm"−"2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB_2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB_2 films.

  4. Defect structure of ultrafine MgB2 nanoparticles

    International Nuclear Information System (INIS)

    Bateni, Ali; Somer, Mehmet; Repp, Sergej; Erdem, Emre; Thomann, Ralf; Acar, Selçuk

    2014-01-01

    Defect structure of MgB 2 bulk and ultrafine particles, synthesized by solid state reaction route, have been investigated mainly by the aid of X-band electron paramagnetic resonance spectrometer. Two different amorphous Boron (B) precursors were used for the synthesis of MgB 2 , namely, boron 95 (purity 95%–97%, <1.5 μm) and nanoboron (purity >98.5%, <250 nm), which revealed bulk and nanosized MgB 2 , respectively. Scanning and transmission electron microscopy analysis demonstrate uniform and ultrafine morphology for nanosized MgB 2 in comparison with bulk MgB 2 . Powder X-ray diffraction data show that the concentration of the by-product MgO is significantly reduced when nanoboron is employed as precursor. It is observed that a significant average particle size reduction for MgB 2 can be achieved only by using B particles of micron or nano size. The origin and the role of defect centers were also investigated and the results proved that at nanoscale MgB 2 material contains Mg vacancies. Such vacancies influence the connectivity and the conductivity properties which are crucial for the superconductivity applications

  5. Pulse laser irradiation into superconducting MgB2 detector

    International Nuclear Information System (INIS)

    Fujiwara, Daisuke; Miki, Shigehito; Satoh, Kazuo; Yotsuya, Tsutomu; Shimakage, Hisashi; Wang, Zhen; Okayasu, Satoru; Katagiri, Masaki; Machida, Masahiko; Kato, Masaru; Ishida, Takekazu

    2005-01-01

    We performed 20-ps pulse laser irradiation experiments on a MgB 2 neutron detector to know a thermal-relaxation process for designing a MgB 2 neutron detector. The membrane-type structured MgB 2 device was fabricated to minimize the heat capacity of sensing part of a detector as well as to enhance its sensitivity. We successfully observed a thermal-relaxation signal resulting from pulse laser irradiation by developing a detection circuit. The response time was faster than 1 μs, meaning that the detector would be capable of counting neutrons at a rate of more than 10 6 events per second

  6. Quench Property of Twisted-Pair MgB$_2$ Superconducting Cables in Helium Gas

    CERN Document Server

    Spurrell, J; Falorio, I; Pelegrin, J; Ballarino, A; Yang, Y

    2015-01-01

    CERN's twisted-pair superconducting cable is a novel design which offers filament transposition, low cable inductance and is particularly suited for tape conductors such as 2G YBCO coated conductors, Ag-sheathed Bi2223 tapes and Ni/Monel-sheathed MgB2 tapes. A typical design of such twistedpair cables consists of multiple superconducting tapes intercalated with thin copper tapes as additional stabilizers. The copper tapes are typically not soldered to the superconducting tapes so that sufficient flexibility is retained for the twisting of the tape assembly. The electrical and thermal contacts between the copper and superconducting tapes are an important parameter for current sharing, cryogenic stability and quench propagation. Using an MgB2 twisted-pair cable assembly manufactured at CERN, we have carried out minimum quench energy (MQE) and propagation velocity (vp) measurements with point-like heat deposition localized within a tape. Furthermore, different contacts between the copper and superconductor aroun...

  7. Fabrication of superconducting MgB2 nanostructures by an electron beam lithography-based technique

    Science.gov (United States)

    Portesi, C.; Borini, S.; Amato, G.; Monticone, E.

    2006-03-01

    In this work, we present the results obtained in fabrication and characterization of magnesium diboride nanowires realized by an electron beam lithography (EBL)-based method. For fabricating MgB2 thin films, an all in situ technique has been used, based on the coevaporation of B and Mg by means of an e-gun and a resistive heater, respectively. Since the high temperatures required for the fabrication of good quality MgB2 thin films do not allow the nanostructuring approach based on the lift-off technique, we structured the samples combining EBL, optical lithography, and Ar milling. In this way, reproducible nanowires 1 μm long have been obtained. To illustrate the impact of the MgB2 film processing on its superconducting properties, we measured the temperature dependence of the resistance on a nanowire and compared it to the original magnesium diboride film. The electrical properties of the films are not degraded as a consequence of the nanostructuring process, so that superconducting nanodevices may be obtained by this method.

  8. Intrinsic flux pinning mechanisms in different thickness MgB2 films

    Directory of Open Access Journals (Sweden)

    C. Yang

    2017-03-01

    Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

  9. Pseudopotential approach to superconductivity in MgB2

    International Nuclear Information System (INIS)

    Sharma, K.S.; Bhargava, Nidhi; Jain, Ritu; Goyal, Varsha; Sharma, Ritu; Sharma, Smita

    2010-01-01

    Superconductivity in MgB 2 has been re-examined in BCS-Eliashberg framework by employing Mc-Millan's T c -equation and form factors of MgB 2 computed from the form factors of component metals (Model-I). The empty core model pseudopotential due to Ashcroft and random phase approximation form of dielectric screening due to Gellmann and Brueckner are used in the present work. An excellent agreement between the present values and other theoretically computed values of T c and with the relevant experimental data for MgB 2 confirms the validity of the present approach. The explicit dependence of λ and T c on the isotopic masses of Mg and B, as revealed from the present work, confirms the role of lattice vibrations in the superconducting behaviour of MgB 2 and the high value of T c in it may be attributed to the phonon mediated e-e interaction coupled with higher values of phonon frequencies due to light mass of B atoms. It has also been observed that the pseudo-atom model (Model-II) with appropriate choice of the potential parameter r c successfully explains high value of T c and isotope effect in MgB 2 , confirming the prominent role played by electron-phonon interaction in the high-T c superconductivity observed in MgB 2 . The isotope effect exponent α-values obtained from the two models are in complete agreement with each other and the present value α = 0.46 is also much closer to the BCS value of 0.5. Interaction strength N 0 V values obtained from the two models are also in perfect agreement with each other and the present value N 0 V = 0.48 suggests that MgB 2 is a strong coupling superconductor. (author)

  10. Dry cryomagnetic system with MgB2 coil

    Science.gov (United States)

    Abin, D. A.; Mineev, N. A.; Osipov, M. A.; Pokrovskii, S. V.; Rudnev, I. A.

    2017-12-01

    MgB2 may be the future superconducting wire material for industrial magnets due to it’s higher operation temperature and potentially lower cost than low temperature superconductors (LTS) have. We designed a compact cryomagnetic system with the use of MgB2. The possibility of creating a magnet with a central field of 5 T from a commercial MgB2 wire by the “react and wound” method was investigated. The magnetic system is cooled by a cryocooler through a copper bus. The magnet has a warm bore diameter of 4 cm. The design of a magnet consisting of three concentric solenoids is proposed: an internal one of high-temperature superconductor (HTS), an average of MgB2, and an external of NbTi. The operating current of the system is 100 A. Two pairs of current leads are used. A separate pair of current leads for power supplying NbTi coil allows testing of MgB2 and HTS coils in an external field. The load curves for each of the magnets are calculated.

  11. Microwave absorption studies of MgB2 superconductor

    Indian Academy of Sciences (India)

    band (9–. 10 GHz) spectrometer. Both polycrystalline pellet and single-grain MgB2, having nearly the same Tc (∼ 39 K) and same size (3×2×1 mm3), were used in the present investigations. Low field modulated microwave absorption signals ...

  12. Electronic structure and superconductivity of MgB 2

    Indian Academy of Sciences (India)

    Results of ab initio electronic structure calculations on the compound, MgB2, using the FPLAPW method employing GGA for the exchange–correlation energy are presented. Total energy minimization enables us to estimate the equilibrium volume, / ratio and the bulk modulus, all of which are in excellent agreement with ...

  13. Preparation and characterization of MgB2 superconductor

    Indian Academy of Sciences (India)

    2Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400 005, India. Abstract. The MgB2 superconductor, synthesized using solid-state and liquid-phase sintering methods, have been characterized for various properties. The upper critical field, irreversibility line and critical current density have been ...

  14. Microwave absorption studies of MgB 2 superconductor

    Indian Academy of Sciences (India)

    Microwave absorption studies have been carried out on MgB2 superconductor using a standard X-band EPR spectrometer. The modulated low-field microwave absorption signals recorded for polycrystalline (grain size ∼ 10m) samples suggested the absence of weak-link character. The field dependent direct microwave ...

  15. Recent developments in melt processed Gd-123 and MgB2 materials at RTRI

    International Nuclear Information System (INIS)

    Muralidhar, M.; Fukumoto, Y.; Ishihara, A.; Suzuki, K.; Tomita, M.; Koblischka, M.R.; Yamamoto, A.; Kishio, K.

    2014-01-01

    Highlights: •Large size Gd-123 bulk material grown in air, using novel thin film Nd-123 seeds grown on MgO crystals. •Quality and uniformity of the Gd-123 materials are excellent. •Batch processed Gd-123 material was used for construction of chilled Maglev vehicle. •MgB 2 bulks can be utilized around 20 K similarly to the Gd-123 material at 77 K. -- Abstract: In this contribution we will report on the current status, recent developments in GdBa 2 Cu 3 O y “Gd-123” and MgB 2 material processing, characterization, and applications at the Railway Technical Research Institute (RTRI). Batch-processing of Gd-123 bulk material grown in air was performed using novel thin film Nd-123 seeds grown on MgO crystals. In this way, we are able to fabricate materials with good quality, and uniform performance. We examined the technology of the uniform performance of the large 45 mm diameter, single grain Gd-123 bulks for use in application of NMR. For this purpose, four 5 mm thick pieces are cut vertically from a single grain Gd-123 material and the magnetic field distribution is measured using a scanning hall sensor. We found that all four pieces are single domain and exhibit a quite uniform field distribution. Furthermore, the batch-processed bulk materials are used for the construction of a chilled Maglev vehicle. On the other hand, to optimize the trapped field performance of bulk MgB 2 material, several samples were prepared by solid state reaction at different temperatures ranging from 750 to 950 °C in pure argon atmosphere. X-ray diffraction results indicated that single phase and homogenous MgB 2 bulks are produced when sintering them around 775 °C. Further, atomic force microscopy (AFM) and scanning electron microscopy (SEM) indicated that an uniform grain size results by controlling the processing temperature. So, higher trapped fields can be achieved in sintered MgB 2 material

  16. Growth of superconducting MgB2 films by pulsed-laser deposition using a Nd-YAG laser

    International Nuclear Information System (INIS)

    Badica, P; Togano, K; Awaji, S; Watanabe, K

    2006-01-01

    Thin films of MgB 2 on r-cut Al 2 O 3 substrates have been grown by pulsed-laser deposition (PLD) using a Nd-YAG laser (fourth harmonic-266 nm) instead of the popular KrF excimer laser. The growth window to obtain superconducting films is laser energy 350-450 mJ and vacuum pressure with Ar-buffer gas of 1-8/10 Pa (initial background vacuum 0.5-1 x 10 -3 Pa). Films were deposited at room temperature and post-annealed in situ and ex situ at temperatures of 500-780 0 C and up to 1 h. Films are randomly oriented with maximum critical temperature (offset of resistive transition) of 27 K. SEM/TEM/EDS investigations show that they are mainly composed of small sphere-like particles (≤20 nm), and contain oxygen and some carbon, uniformly distributed in the flat matrix, but the amount of Mg and/or oxygen is higher in the aggregates-droplets (100-1000 nm) observed on the surface of the film's matrix. Some aspects of the processing control and dependences on film characteristics are discussed. The technique is promising for future development of coated conductors

  17. A new approach to MgB2 superconducting magnet fabrication

    International Nuclear Information System (INIS)

    Miyazoe, A; Ando, T; Wada, H; Abe, H; Hirota, N; Sekino, M

    2008-01-01

    Fabrication of MgB 2 -based superconducting magnets has been attempted by a new approach using film coated on symmetric tubes. Superconducting MgB 2 films have been prepared on iron substrates by electroplating in molten electrolytes. The critical current (I c ) of the MgB 2 electroplating films at 4.2 K and at self-field was 15 A on the basis of 1 μV/cm of I c criterion. A model calculation has shown that MgB 2 -based superconducting magnets based on MgB 2 electroplating films have the potential to generate magnetic fields over 0.5 T

  18. Active Protection of an MgB2 Test Coil

    Science.gov (United States)

    Park, Dong Keun; Hahn, Seungyong; Bascuñán, Juan; Iwasa, Yukikazu

    2011-01-01

    This paper presents results of a study, experimental and computational, of a detect-and-activate-the-heater protection technique applied to a magnesium diboride (MgB2) test coil operated in semi-persistent mode. The test coil with a winding ID of 25 cm and wound with ~500-m long reacted MgB2 wire was operated at 4.2 K immersed in a bath of liquid helium. In this active technique, upon the initiation of a “hot spot” of a length ~10 cm, induced by a “quench heater,” a “protection heater” (PH) of ~600-cm long planted within the test coil is activated. The normal zone created by the PH is large enough to absorb the test coil’s entire initial stored energy and still keeps the peak temperature within the winding below ~260 K. PMID:22081754

  19. Electromagnetic densification of MgB2/Cu wires

    International Nuclear Information System (INIS)

    Woźniak, M; Glowacki, B A

    2014-01-01

    Electromagnetic compaction of in situ MgB 2 /Cu wire has been achieved using a custom-built 200 J device. The monofilament core packing density was increased by 8% and up to 31% for unreacted and reacted wires respectively. The higher density of the MgB 2 core resulted in a critical current density increase of up to 75% in comparison to that for cold-drawn-only wire. Applying this treatment to a wire with Cu powder additions to the core and with an optimized heat treatment resulted in one of the highest ever reported values of J c for MgB 2 /Cu wires of 6.83 × 10 3  A cm −2 at 4.2 K and 6 T. (paper)

  20. Observation of pseudogap in MgB2

    Science.gov (United States)

    Patil, S.; Medicherla, V. R. R.; Ali, Khadiza; Singh, R. S.; Manfrinetti, P.; Wrubl, F.; Dhar, S. K.; Maiti, Kalobaran

    2017-11-01

    We investigate the electronic structure of a specially prepared highly dense conventional high temperature superconductor, MgB2, employing high resolution photoemission spectroscopy. The spectral evolution close to the Fermi energy is commensurate to BCS descriptions as expected. However, the spectra in the wider energy range reveal the emergence of a pseudogap much above the superconducting transition temperature indicating an apparent departure from the BCS scenario. The energy scale of the pseudogap is comparable to the energy of the E2g phonon mode responsible for superconductivity in MgB2 and the pseudogap can be attributed to the effect of electron-phonon coupling on the electronic structure. These results reveal a scenario of the emergence of the superconducting gap within an electron-phonon coupling induced pseudogap and have significant implications in the study of high temperature superconductors.

  1. Investigation of pinning in MgB2 superconductors

    International Nuclear Information System (INIS)

    Mohammad, S.; Reissner, M.; Steiner, W.; Bauer, E.; Giovannini, M.

    2006-01-01

    Full text: The pinning behaviour of bulk MgB 2 superconductors is peculiar in many respects. Pinning seems to be stronger than in classical high T C materials and there seems to be no weak link problem in these compounds, giving hope to produce bulk samples and wires with current densities appropriate for technical applications. But, although many studies concerning the pinning behaviour in this compound appeared in recent years, the results are still contradictory. In the present work we present results of an investigation of the pinning behaviour by magnetic relaxation measurements of three MgB 2 samples: a pure one, a sample with 8 at% Al substitution and a sample with 10 wt% of SiC admixture. A comparison of different analyses methods is given. (author)

  2. Measurement of the penetration depth and coherence length of MgB2 in all directions using transmission electron microscopy

    DEFF Research Database (Denmark)

    Loudon, J. C.; Yazdi, Sadegh; Kasama, Takeshi

    2015-01-01

    We demonstrate that images of flux vortices in a superconductor taken with a transmission electron microscope can be used to measure the penetration depth and coherence length in all directions at the same temperature and magnetic field. This is particularly useful for MgB2, where these quantities...... vary with the applied magnetic field and values are difficult to obtain at low field or in the c direction. We obtained images of flux vortices from a MgB2 single crystal cut in the ac plane by focused ion beam milling and tilted to 45 degrees. with respect to the electron beam about...... the crystallographic a axis. A new method was developed to simulate these images that accounted for vortices with a nonzero core in a thin, anisotropic superconductor and a simplex algorithm was used to make a quantitative comparison between the images and simulations to measure the penetration depths and coherence...

  3. Vapor annealing synthesis of non-epitaxial MgB2 films on glassy carbon

    Science.gov (United States)

    Baker, A. A.; Bayu Aji, L. B.; Bae, J. H.; Stavrou, E.; Steich, D. J.; McCall, S. K.; Kucheyev, S. O.

    2018-05-01

    We describe the fabrication and characterization of 25–800 nm thick MgB2 films on glassy carbon substrates by Mg vapor annealing of sputter-deposited amorphous B films. Results demonstrate a critical role of both the initial B film thickness and the temperature–time profile on the microstructure, elemental composition, and superconducting properties of the resultant MgB2 films. Films with thicknesses of 55 nm and below exhibit a smooth surface, with a roughness of 1.1 nm, while thicker films have surface morphology consisting of elongated nano-crystallites. The suppression of the superconducting transition temperature for thin films scales linearly with the oxygen impurity concentration and also correlates with the amount of lattice disorder probed by Raman scattering. The best results are obtained by a rapid (12 min) anneal at 850 °C with large temperature ramp and cooling rates of ∼540 °C min‑1. Such fast processing suppresses the deleterious oxygen uptake.

  4. MgB2 magnetometer with a directly coupled pick-up loop

    Science.gov (United States)

    Portesi, C.; Mijatovic, D.; Veldhuis, D.; Brinkman, A.; Monticone, E.; Gonnelli, R. S.

    2006-05-01

    In this work, we show the results obtained in the fabrication and characterization of an MgB2 magnetometer with a directly coupled pick-up loop. We used an all in situ technique for fabricating magnesium diboride films, which consists of the co-evaporation of B and Mg by means of an e-gun and a resistive heater respectively. Consequently, we realized the superconducting device, which incorporates two nanobridges as weak links in a superconducting loop. The nanobridges were realized by focused ion beam milling; they were 240 nm wide and had a critical current density of 107 A cm-2. The magnetometer was characterized at different temperatures and also measurements of the noise levels have been performed. The device shows Josephson quantum interference up to 20 K and the calculated effective area at low temperatures was 0.24 mm2. The transport properties of the magnetometer allow determining fundamental materials properties of the MgB2 thin films, such as the penetration depth.

  5. Persistence of metastable vortex lattice domains in MgB2 in the presence of vortex motion.

    Science.gov (United States)

    Rastovski, C; Schlesinger, K J; Gannon, W J; Dewhurst, C D; DeBeer-Schmitt, L; Zhigadlo, N D; Karpinski, J; Eskildsen, M R

    2013-09-06

    Recently, extensive vortex lattice metastability was reported in MgB2 in connection with a second-order rotational phase transition. However, the mechanism responsible for these well-ordered metastable vortex lattice phases is not well understood. Using small-angle neutron scattering, we studied the vortex lattice in MgB2 as it was driven from a metastable to the ground state through a series of small changes in the applied magnetic field. Our results show that metastable vortex lattice domains persist in the presence of substantial vortex motion and directly demonstrate that the metastability is not due to vortex pinning. Instead, we propose that it is due to the jamming of counterrotated vortex lattice domains which prevents a rotation to the ground state orientation.

  6. Effect of process variables on synthesis of MgB2 by a high energy ball mill

    Directory of Open Access Journals (Sweden)

    Kurama Haldun

    2016-01-01

    Full Text Available The discovery of superconductivity of MgB2 in 2001, with a critical temperature of 39 K, offered the promise of important large-scale applications at around 20 K. Except than the other featured synthesis methods, mechanical activation performed by high energy ball mills, as bulk form synthesis or as a first step of wire and thin film productions, has considered as an effective alternative production route in recent years. The process of mechanical activation (MA starts with mixing the powders in the right proportion and loading the powder mixture into the mill with the grinding media. The milled powder is then consolidated into a bulk shape and heat-treated to obtain desired microstructure and properties. Thus, the important components of the MA process are the raw materials, mill type and process variables. During the MA process, heavy deformation of particles occure. This is manifested by the presence of a variety of crystal defects such as dislocations, vacancies, stacking faults and increased number of particle boundaries. The presence of this defect structure enhances the diffusivity of solute hence the critical currents and magnetic flux pinning ability of MgB2 are improved. The aim of the present study is to determine the effects of process variables such as ball-to-powder mass ratio, size of balls, milling time, annealing temperature and contribution of process control agent (toluene on the product size, morphology and conversion level of precursor powders to MgB2 after subsequent heat treatment. The morphological analyses of the samples were performed by a high vacuum electron microscope ZEISS SUPRA VP 50. The phase compositions of the samples were performed with an Rigaku-Rint 2200 diffractometer, with nickel filtered Cu Kα radiation and conversion level. The MgB2 phase wt % was calculated by the Rietveld refinement method. The obtained results were discussed according to the process variables to find out their affect on the structure

  7. Enhancement of the critical current density and flux pinning of MgB2 superconductor by nanoparticle SiC doping

    Science.gov (United States)

    Dou, S. X.; Soltanian, S.; Horvat, J.; Wang, X. L.; Zhou, S. H.; Ionescu, M.; Liu, H. K.; Munroe, P.; Tomsic, M.

    2002-10-01

    Doping of MgB2 by nano-SiC and its potential for the improvement of flux pinning were studied for MgB2-x)(SiCx/2 with x=0, 0.2, and 0.3 and for 10 wt % nano-SiC-doped MgB2 samples. Cosubstitution of B by Si and C counterbalanced the effects of single-element doping, decreasing Tc by only 1.5 K, introducing intragrain pinning centers effective at high fields and temperatures, and significantly enhancing Jc and Hirr. Compared to the undoped sample, Jc for the 10 wt % doped sample increased by a factor of 32 at 5 K and 8 T, 42 at 20 K and 5 T, and 14 at 30 K and 2 T. At 20 K and 2 T, the Jc for the doped sample was 2.4 x105 A/cm2, which is comparable to Jc values for the best Ag/Bi-2223 tapes. At 20 K and 4 T, Jc was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. The magnetic Jc is consistent with the transport Jc which remains at 20 000 A/cm2 even at 10 T and 5 K for the doped sample, an order of magnitude higher than the undoped one. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using a formula of MgBxSiyCz instead of pure MgB2.

  8. Specific heat of MgB_2 after irradiation

    OpenAIRE

    Wang, Yuxing; Bouquet, Frederic; Sheikin, Ilya; Toulemonde, Pierre; Revaz, Bernard; Eisterer, Michael; Weber, Harald W.; Hinderer, Joerg; Junod, Alain

    2002-01-01

    We studied the effect of disorder on the superconducting properties of polycrystalline MgB_2 by specific-heat measurements. In the pristine state, these measurements give a bulk confirmation of the presence of two superconducting gaps with 2 Delta 0 / k_B T_c = 1.3 and 3.9 with nearly equal weights. The scattering introduced by irradiation suppresses T_c and tends to average the two gaps although less than predicted by theory. We also found that by a suitable irradiation process by fast neutr...

  9. Al-doped MgB_2 materials studied using electron paramagnetic resonance and Raman spectroscopy

    International Nuclear Information System (INIS)

    Bateni, Ali; Somer, Mehmet; Erdem, Emre; Repp, Sergej; Weber, Stefan

    2016-01-01

    Undoped and aluminum (Al) doped magnesium diboride (MgB_2) samples were synthesized using a high-temperature solid-state synthesis method. The microscopic defect structures of Al-doped MgB_2 samples were systematically investigated using X-ray powder diffraction, Raman spectroscopy, and electron paramagnetic resonance. It was found that Mg-vacancies are responsible for defect-induced peculiarities in MgB_2. Above a certain level of Al doping, enhanced conductive properties of MgB_2 disappear due to filling of vacancies or trapping of Al in Mg-related vacancy sites.

  10. MgB2-based superconductors for fault current limiters

    Science.gov (United States)

    Sokolovsky, V.; Prikhna, T.; Meerovich, V.; Eisterer, M.; Goldacker, W.; Kozyrev, A.; Weber, H. W.; Shapovalov, A.; Sverdun, V.; Moshchil, V.

    2017-02-01

    A promising solution of the fault current problem in power systems is the application of fast-operating nonlinear superconducting fault current limiters (SFCLs) with the capability of rapidly increasing their impedance, and thus limiting high fault currents. We report the results of experiments with models of inductive (transformer type) SFCLs based on the ring-shaped bulk MgB2 prepared under high quasihydrostatic pressure (2 GPa) and by hot pressing technique (30 MPa). It was shown that the SFCLs meet the main requirements to fault current limiters: they possess low impedance in the nominal regime of the protected circuit and can fast increase their impedance limiting both the transient and the steady-state fault currents. The study of quenching currents of MgB2 rings (SFCL activation current) and AC losses in the rings shows that the quenching current density and critical current density determined from AC losses can be 10-20 times less than the critical current determined from the magnetization experiments.

  11. Note: Progress on the use of MgB2 superconducting joint technique for the development of MgB2 magnets for magnetic resonance imaging (MRI).

    Science.gov (United States)

    Kim, Y G; Song, J B; Kim, J C; Kim, J M; Yoo, B H; Yun, S B; Hwang, D Y; Lee, H G

    2017-08-01

    This note presents a superconducting joint technique for the development of MgB 2 magnetic resonance imaging (MRI) magnets. The MgB 2 superconducting joint was fabricated by a powder processing method using Mg and B powders to establish a wire-bulk-wire connection. The joint resistance measured using a field-decay method was magnets operating in the persistent current mode.

  12. Phase 1 Final Technical Report - MgB2 Synthesis: Pushing to High Field Performance

    International Nuclear Information System (INIS)

    Bhatia, Mohit; McIntyre, Peter

    2009-01-01

    Accelerator Technology Corp. (ATC) has successfully completed its Phase 1 effort to develop rf plasma torch synthesis of MgB2 superconducting powder. The overall objective is to de-velop a way to introduce homogeneous alloying of C and SiC impurities into phase-pure MgB2. Several groups have attained remarkable benefits from such alloying in raising the upper critical field Hc2 from ∼14 T to ∼30 T (bulk) and ∼50 T (thin films). But no one has succeeded in pro-ducing that benefit homogeneously, so that current transport in a practical powder-in-tube (PIT) conductor is largely the same as without the alloying. ATC has conceived the possibility of attaining such homogeneity by passing aerosol suspen-sions of reactant powders through an rf plasma torch, with each reactant transported on a stream-line that heats it to an optimum temperature for the synthesis reaction. This procedure would uniquely access non-equilibrium kinetics for the synthesis reaction, and would provide the possi-bility to separately control the temperature and stoichiometry of each reactant as it enters the mixing region where synthesis occurs. It also facilitates the introduction of seed particles (e.g. nanoscale SiC) to dramatically enhance the rate of the synthesis reaction compared to gas-phase synthesis in rf plasma reported by Canfield and others. During the Phase 1 effort ATC commissioned its 60 kW 5 MHz rf source for a manufactur-ing-scale rf plasma torch. This effort required repair of numerous elements, integration of cooling and input circuits, and tuning of the load characteristics. The effort was successful, and the source has now been tested to ∼full power. Also in the Phase 1 effort we encountered a subsidiary but very important problem: the world is running out of the only present supply of phase-pure amorphous boron. The starting boron powder must be in the amorphous phase in order for the synthesis reaction to produce phase-pure MgB2. Even small contamination with

  13. Formation of MgB2 at ambient temperature with an electrochemical process: a plausible mechanism

    International Nuclear Information System (INIS)

    Jadhav, A B; Subhedar, K M; Hyam, R S; Talaptra, A; Sen, Pintu; Bandyopadhyay, S K; Pawar, S H

    2005-01-01

    The binary intermetallic MgB 2 superconductor has been synthesized by many research groups. However, the mechanism of its formation is not clearly understood. In this communication, a comprehensive mechanism of the formation of MgB 2 from Le Chatelier's principle of equilibrium reaction has been explained both for solid-state reaction and electrodeposition methods. (rapid communication)

  14. Measurement of the anisotropy ratios in MgB2 single crystals

    International Nuclear Information System (INIS)

    Kim, Heon-Jung; Kang, Byeongwon; Lee, Hyun-Sook; Lee, Sung-Ik

    2006-01-01

    We present our recent measurements on the anisotropy ratios of MgB 2 single crystals. Our measurements indicate that the anisotropy ratios of the penetration depth and of the upper critical field have different magnitudes and temperature dependences, as predicted by theoretical calculations. These results imply that the two-gap nature can strongly influence the superconducting properties of MgB 2

  15. Directional scanning tunneling spectroscopy in MgB2

    International Nuclear Information System (INIS)

    Iavarone, M.; Karapetrov, G.; Koshelev, A.E.; Kwok, W.K.; Crabtree, G.W.; Hinks, D.G.; Cook, R.; Kang, W.N.; Choi, E.M.; Kim, H.J.; Lee, S.I.

    2003-01-01

    The superconductivity in MgB 2 has a two-band character with the dominating band having a 2D character and the second band being isotropic in the three dimensions. We use tunneling microscopy and spectroscopy to reveal the two distinct energy gaps at Δ 1 =2.3 meV and Δ 2 =7.1 meV. Different spectral weights of the partial superconducting density of states are a reflection of different tunneling directions in this multi-band system. The results are consistent with the existence of two-band superconductivity in the presence of strong interband superconducting pair interaction and quasiparticle scattering. The temperature evolution of the tunneling spectra shows both gaps vanishing at the bulk T c

  16. Specific heat of MgB2 after irradiation

    International Nuclear Information System (INIS)

    Wang Yuxing; Bouquet, Frederic; Sheikin, Ilya; Toulemonde, Pierre; Revaz, Bernard; Eisterer, Michael; Weber, Harald W; Hinderer, Joerg; Junod, Alain

    2003-01-01

    We studied the effect of disorder on the superconducting properties of polycrystalline MgB 2 by specific-heat measurements. In the pristine state, these measurements give a bulk confirmation of the presence of two superconducting gaps with 2Δ 0 /k B T c =1.3 and 3.9 with nearly equal weights. The scattering introduced by irradiation suppresses T c and tends to average the two gaps although less than predicted by theory. We also found that by a suitable irradiation process by fast neutrons, a substantial bulk increase of dH c2 /dT at T c can be obtained without sacrificing more than a few degrees in T c . The upper critical field of the sample after irradiation exceeds 28 T at T→0

  17. On heavy carbon doping of MgB2

    International Nuclear Information System (INIS)

    Kasinathan, Deepa; Lee, K.-W.; Pickett, W.E.

    2005-01-01

    Heavy carbon doping of MgB 2 is studied by first principles electronic structure studies of two types, an ordered supercell (Mg(B 1-x C x ) 2 , x 0.0833) and also the coherent potential approximation method that incorporates effects of B-C disorder. For the ordered model, the twofold degenerate σ-bands that are the basis of the high temperature superconductivity are split by 60 meV (i.e. 7 meV/% C) and the σ Fermi cylinders contain 0.070 holes/cell, compared to 0.11 for MgB 2 . A virtual crystal treatment tends to overestimate the rate at which σ holes are filled by substitutional carbon. The coherent potential approximation (CPA) calculations give the same rate of band filling as the supercell method. The occupied local density of states of C is almost identical to that of B in the upper 2 eV of the valence bands, but in the range -8 eV to -2 eV, C has a considerably larger density of states. The calculations indicate that the σ Fermi surface cylinders pinch off at the zone center only above the maximum C concentration x ∼ 0.10. These results indicate that Mg(B 1-x C x ) 2 as well as Mg 1-x Al x B 2 is a good system in which to study the evolution of the unusual electron-phonon coupling character and strength as the crucial σ hole states are filled

  18. Towards a Cryogen-Free MgB2-Based Superconducting Radio Frequency Accelerating Cavities

    Science.gov (United States)

    Nassiri, Alireza

    Studies on the application of Magnesium diboride (MgB2) superconducting films have shown promise for use with the radio-frequency (SRF) accelerating cavities. MgB2\\ coating is a potential candidate to replace bulk niobium (Nb) SRF cavities. The ultimate goal of our research is to demonstrate MgB2 coating on copper cavities to allow operation at about 20 K or so as a result of the high transition temperature (Tc) of MgB2 and taking advantage of the excellent thermal conductivity of copper. Here, we will report on our recent experimental results of applying hybrid physical-chemical vapor deposition (HPCVD) to grow MgB2 films on 2-inch diameter copper discs as well as on a 2.8 GHz resonator cavity *Work supported by the U.S. Department of Energy, Office of Science, under Contract No. DE-AC02-06H11357.

  19. Effects of sintering conditions on critical current properties and microstructures of MgB2 bulks

    International Nuclear Information System (INIS)

    Yamamoto, Akiyasu; Shimoyama, Jun-ichi; Ueda, Shinya; Katsura, Yukari; Iwayama, Isao; Horii, Shigeru; Kishio, Kohji

    2005-01-01

    The effects of heating conditions on critical current properties and microstructures of undoped MgB 2 bulks were systematically studied. Strong correlation was observed between J c and microstructures. The network structure with an excellent inter-grain connectivity of MgB 2 grains contributed to high-J c under low magnetic fields, and small grain size of MgB 2 enhanced the grain boundary flux pinning. Long time heating at low temperatures below the melting point of magnesium was discovered to be most effective for synthesis of MgB 2 bulks having strongly connected MgB 2 network structure with small grains. The sample heated at 550 deg. C for 1200 h recorded a high-J c of 4.02 x 10 5 A cm -2 at 20 K in self-field, while high-temperature and long time heating brought a significant grain growth which resulted in low J c

  20. MgB2 thick films on three-dimensional structures fabricated by HPCVD

    Science.gov (United States)

    Guo, Zhengshan; Cai, Xingwei; Liao, Xuebin; Chen, Yiling; Yang, Can; Niu, Ruirui; Luo, Wenhao; Huang, Zigeng; Feng, Qingrong; Gan, Zizhao

    2018-06-01

    Magnetic shielding has been a key factor in the measurement of ultra-weak magnetic fields, especially for shielding from low frequency electromagnetic noise. With the recent development of superconducting quantum interference devices, superconducting magnetic shielding has become an important area of research. MgB2 has shown great potential in magnetic shielding for its remarkable superconducting properties, the feasibility of its use in this capacity having been demonstrated by MgB2 bulk samples. However, the potential for application of such bulk samples is limited. In this work, we have investigated the possibility of the fabrication of MgB2 films on three-dimensional (3D) structures using a hybrid physical‑chemical vapor deposition system. MgB2 films 10 μm thick have been fabricated on the outer surface of a polycrystalline Al2O3 cylinder. The deposited film showed a transition temperature (TC) of 39 K and J C of 5.1 × 105 A · cm‑2, which are comparable to those of planar MgB2 films. This work shows the feasibility of depositing MgB2 films onto a 3D structure, and sheds light on the potential use of MgB2 films in superconducting magnetic shielding.

  1. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  2. Improving magnetic properties of MgB_2 bulk superconductors by synthetic engine oil treatment

    International Nuclear Information System (INIS)

    Taylan Koparan, E.; Savaskan, B.; Yanmaz, E.

    2016-01-01

    Highlights: • The effects of synthetic engine oil treatment on magnetic properties of bulk MgB_2 superconductors has been first time investigated and reported. • Synthetic engine oil used as a product which is cheap and a rich carbon source obviously has improved the superconducting magnetic properties of MgB_2. • The critical current density of all of MgB_2 samples immersed at different standby time in engine oil in whole field range has been better than that of the pure MgB_2 sample. • The MgB_2 sample immersed at 300 min standby time in synthetic engine oil has the best performance compared to other samples. - Abstract: The present study focuses on the effects of standby time of the MgB_2 samples immersed in synthetic engine oil on the critical current density ( J_c(H)), magnetic field dependence of the pinning force density f_p(b) and T_c performances of MgB_2 bulk superconductors. Synthetic engine oil was used as a product which is cheap and a rich carbon source. Manufactured MgB_2 pellet samples were immersed at different standby time of 30 min, 120 min, 300 min and 1440 min in synthetic engine oil after the first heating process. Finally, MgB_2 samples immersed in synthetic engine oil were sintered at 1000 °C and kept for 15 min in Ar atmosphere. The critical current density of all of MgB_2 samples immersed at different standby time in engine oil in whole field range was better than that of the pure MgB_2 sample because of the number of the pinning centers. The MgB_2 sample immersed at 300 min standby time in synthetic engine oil has the best performance compared to other samples. The J_c value for the pure sample is 2.0 × 10"3 A/cm"2, whereas for the MgB_2 sample immersed at 300 min standby time in engine oil the J_c is enhanced to 4.8 × 10"3 A/cm"2 at 5 K and 3 T. The superconducting transition temperature (T_c) did not change with the increasing standby time of the samples in synthetic engine oil at all. The best diamagnetic property was obtained from the sample which kept in synthetic engine oil for 300 min. Synthetic engine oil treatment results in remarkable improvement of the critical current density and pinning force performances of MgB_2 superconductors. It was found that all MgB_2 samples have a different pinning property at different measuring temperatures. Using synthetic engine oil as a product which is cheap and a rich carbon source in MgB_2 bulk superconductors makes MgB_2 samples immersed in synthetic engine oil a good candidate for industrial applications.

  3. Lightweight MgB2 superconducting 10 MW wind generator

    Science.gov (United States)

    Marino, I.; Pujana, A.; Sarmiento, G.; Sanz, S.; Merino, J. M.; Tropeano, M.; Sun, J.; Canosa, T.

    2016-02-01

    The offshore wind market demands a higher power rate and more reliable turbines in order to optimize capital and operational costs. The state-of-the-art shows that both geared and direct-drive conventional generators are difficult to scale up to 10 MW and beyond due to their huge size and weight. Superconducting direct-drive wind generators are considered a promising solution to achieve lighter weight machines. This work presents an innovative 10 MW 8.1 rpm direct-drive partial superconducting generator using MgB2 wire for the field coils. It has a warm iron rotor configuration with the superconducting coils working at 20 K while the rotor core and the armature are at ambient temperature. A cooling system based on cryocoolers installed in the rotor extracts the heat from the superconducting coils by conduction. The generator's main parameters are compared against a permanent magnet reference machine, showing a significant weight and size reduction. The 10 MW superconducting generator concept will be experimentally validated with a small-scale magnetic machine, which has innovative components such as superconducting coils, modular cryostats and cooling systems, and will have similar size and characteristics as the 10 MW generator.

  4. Lightweight MgB2 superconducting 10 MW wind generator

    International Nuclear Information System (INIS)

    Marino, I; Pujana, A; Sarmiento, G; Sanz, S; Merino, J M; Tropeano, M; Sun, J; Canosa, T

    2016-01-01

    The offshore wind market demands a higher power rate and more reliable turbines in order to optimize capital and operational costs. The state-of-the-art shows that both geared and direct-drive conventional generators are difficult to scale up to 10 MW and beyond due to their huge size and weight. Superconducting direct-drive wind generators are considered a promising solution to achieve lighter weight machines. This work presents an innovative 10 MW 8.1 rpm direct-drive partial superconducting generator using MgB 2 wire for the field coils. It has a warm iron rotor configuration with the superconducting coils working at 20 K while the rotor core and the armature are at ambient temperature. A cooling system based on cryocoolers installed in the rotor extracts the heat from the superconducting coils by conduction. The generator’s main parameters are compared against a permanent magnet reference machine, showing a significant weight and size reduction. The 10 MW superconducting generator concept will be experimentally validated with a small-scale magnetic machine, which has innovative components such as superconducting coils, modular cryostats and cooling systems, and will have similar size and characteristics as the 10 MW generator. (paper)

  5. Phthalocyanine doping to improve critical current densities in MgB2 tapes

    International Nuclear Information System (INIS)

    Zhang Xianping; Ma Yanwei; Wang Dongliang; Gao Zhaoshun; Wang Lei; Qi Yanpeng; Awaji, Satoshi; Watanabe, Kazuo; Mossang, Eric

    2009-01-01

    Phthalocyanine-doped MgB 2 tapes were prepared by the in situ powder-in-tube method. The relationships between the critical current properties, crystallinity and microstructure were studied as a function of the phthalocyanine doping level. It is found that both H irr and H c2 were improved when MgB 2 samples were doped with phthalocyanine, which are mainly attributed to the effective carbon substitution and enhanced flux pinning strength caused by very fine grain sizes. Furthermore, compared to pure samples, the MgO content remained almost unchanged in all doped tapes, which is very beneficial to having better grain connectivity in MgB 2 . Significantly improved J c was obtained in the phthalocyanine-doped MgB 2 tapes, especially under high magnetic fields.

  6. Development of MgB2 superconductor wire with high critical current

    International Nuclear Information System (INIS)

    Kim, Chan Joong; Jun, Byung Hyuk; Park, Soon Dong; Kim, Nam Kyu; Kim, Yi Jeong; Yi, Ji Hye; Lee, Ji Hyun; Tan, Kai Sin

    2009-07-01

    The MgB 2 superconductor with smaller grain size could improve its critical properties by providing flux pinning centers with high grain boundary density. The effects of C doping such as charcoal, paper ash and glycerin on the superconducting properties was investigated for in situ processed MgB 2 samples using low purity semi-crystalline B powder. The results show a decrease in Tc and an enhancement of Jc at high fields for the C-doped samples as compared to the un-doped samples. A combined process of a mechanical ball milling and liquid glycerin (C 3 H 8 O 3 ) treatment of B powder has been conducted to enhance the superconducting properties of MgB 2 . The mechanical ball milling was effective for grain refinement, and a lattice disorder was easily achieved by glycerin addition. With the combined process, the critical properties was further increased due to a higher grain boundary density and a greater C substitution. To get fine grain structure of MgB 2 with high critical current properties, mechanical milling for as-received B powder and low temperature solid-state reaction of 550 or 600 .deg. C were attempted to in situ powder-in-tube processed MgB 2 /Fe wires. The critical current properties of the MgB 2 wires using the milled B powder were enhanced due to a smaller grain size and an increased volume of the superconducting phase. The solid-state reaction of a low temperature process for the samples using the milled B powder resulted in a poorer crystallinity with a smaller grain size, which improved superconducting properties. We established the system to measure the transport current properties of the MgB 2 wires. The field dependence of the transport Jc was evaluated for the MgB 2 wires heat-treated at different heat treatment conditions using ball-milled and glycerin-treated B powder. The MgB 2 magnet was developed and the AC loss of MgB 2 wire was also investigated. A conduction cooling device to cool the MgB 2 coil down to 4 K has been fabricated and the coil was tested up to 100 A

  7. Design of MgB2 Superconducting coils for the Ignitor Experiment*

    Science.gov (United States)

    Grasso, G.; Penco, R.; Berta, S.; Coppi, B.; Giunchi, G.

    2009-11-01

    A feasibility study for the adoption of MgB2 superconducting cables for the largest (about 5 m in diameter) of the poloidal field coils of the Ignitor machine is being carried out. This initiative was prompted by the progress made in the fabrication of MgB2 long cables, and related superconducting magnets of relatively large dimensions. These magnets will be cryocooled at the operating temperature of 10-15 K that is compatible with the He-gas cryogenic cooling system of Ignitor as well as with the projected superconducting current density of the MgB2 material, at the magnetic field values (˜4-5 T) in which these coils are designed to operate. The optimal cable configuration has been identified that can provide an efficient cooling of the MgB2 conductors over times compatible with the machine duty cycles. MgB2 superconductors hold the promise of becoming suitable for high field magnets by appropriate doping of the material and of replacing gradually the normal conducting coils adopted, by necessity, in high field experiments. Therefore, an appropriate R&D program on the development of improved MgB2 material and related superconducting cabling options has been undertaken, involving different institutions.

  8. Flux pinning behaviors of Ti and C co-doped MgB2 superconductors

    International Nuclear Information System (INIS)

    Yang, Y.; Zhao, D.; Shen, T.M.; Li, G.; Zhang, Y.; Feng, Y.; Cheng, C.H.; Zhang, Y.P.; Zhao, Y.

    2008-01-01

    Flux pinning behavior of carbon and titanium concurrently doped MgB 2 alloys has been studied by ac susceptibility and dc magnetization measurements. It is found that critical current density and irreversibility field of MgB 2 have been significantly improved by doping C and Ti concurrently, sharply contrasted to the situation of C-only-doped or Ti-only-doped MgB 2 samples. AC susceptibility measurement reveals that the dependence of the pinning potential on the dc applied field of Mg 0.95 Ti 0.05 B 1.95 C 0.05 has been determined to be U(B dc )∝B dc -1 compared to that of MgB 2 U(B dc )∝B dc -1.5 . As to the U(J) behavior, a relationship of U(J) ∝ J -0.17 is found fitting well for Mg 0.95 Ti 0.05 B 1.95 C 0.05 with respect to U(J) ∝ J -0.21 for MgB 2 . All the results reveal a strong enhancement of the high field pinning potential in C and Ti co-doped MgB 2

  9. Development of Ti-sheathed MgB2 wires with high critical current density

    International Nuclear Information System (INIS)

    Liang, G; Fang, H; Hanna, M; Yen, F; Lv, B; Alessandrini, M; Keith, S; Hoyt, C; Tang, Z; Salama, K

    2006-01-01

    Working towards developing lightweight superconducting magnets for future space and other applications, we have successfully fabricated mono-core Ti-sheathed MgB 2 wires by the powder-in-tube method. The wires were characterized by magnetization, electrical resistivity, x-ray diffraction, scanning electron microscopy, and energy dispersive spectrometry measurements. The results indicate that the Ti sheath does not react with the magnesium and boron, and the present wire rolling process can produce MgB 2 wires with a superconducting volume fraction of at least 64% in the core. Using the Bean model, it was found that at 5 K, the magnetic critical current densities, J c , measured in magnetic fields of 0, 5, and 8 T are about 4.2 x 10 5 , 3.6 x 10 4 , and 1.4 x 10 4 A cm -2 , respectively. At 20 K and 0 T, the magnetic J c is about 2.4 x 10 5 A cm -2 . These results show that at zero and low fields, the values of the magnetic J c for Ti-sheathed MgB 2 wires are comparable with the best results available for the Fe-sheathed MgB 2 wires. At high fields, however, the J c for Ti-sheathed MgB 2 wires appears higher than that for the Fe-sheathed MgB 2 wires

  10. Assessment of liquid hydrogen cooled MgB2 conductors for magnetically confined fusion

    International Nuclear Information System (INIS)

    Glowacki, B A; Nuttall, W J

    2008-01-01

    Importantly environmental factors are not the only policy-driver for the hydrogen economy. Over the timescale of the development of fusion energy systems, energy security issues are likely to motivate a shift towards both hydrogen production and fusion as an energy source. These technologies combine local control of the system with the collaborative research interests of the major energy users in the global economy. A concept Fusion Island Reactor that might be used to generate H 2 (rather than electricity) is presented. Exploitation of produced hydrogen as a coolant and as a fuel is proposed in conjunction with MgB 2 conductors for the tokomak magnets windings, and electrotechnical devices for Fusion Island's infrastructure. The benefits of using MgB 2 over the Nb-based conductors during construction, operation and decommissioning of the Fusion Island Reactor are presented. The comparison of Nb 3 Sn strands for ITER fusion magnet with newly developed high field composite MgB 2 PIT conductors has shown that at 14 Tesla MgB 2 possesses better properties than any of the Nb 3 Sn conductors produced. In this paper the potential of MgB 2 conductors is examined for tokamaks of both the conventional ITER type and a Spherical Tokamak geometry. In each case MgB 2 is considered as a conductor for a range of field coil applications and the potential for operation at both liquid helium and liquid hydrogen temperatures is considered. Further research plans concerning the application of MgB 2 conductors for Fusion Island are also considered

  11. Enhancing the superconducting temperature of MgB2 by SWCNT dilution

    Science.gov (United States)

    Ma, Danhao; Jayasingha, Ruwantha; Hess, Dustin T.; Adu, Kofi W.; Sumanasekera, Gamini U.; Terrones, Mauricio

    2014-02-01

    We report, for the first time, an increase in the superconducting critical temperature, TC of commercial “dirty” MgB2 by a nonsubstitutional hole-doping of the MgB2 structure using minute, single-wall carbon nanotube (SWCNT) inclusions. We varied the SWCNTs concentration from 0.05 wt% to 5 wt% and investigated the temperature-dependent resistivity from 10 K to 300 K. We used micro-Raman spectroscopy, field-emission scanning electron microscopy, and X-ray diffraction to analyze the interfacial interactions between the SWCNTs and the MgB2 grains. We obtained an increase in TC from 33.0 to 37.8 K (ΔTC+=4.8 K), which is attributed to charge transfer from the MgB2 structure to the SWCNT structure. The charge transfer phenomenon is confirmed by micro-Raman analysis of the phonon states of the SWCNT tangential band frequency in the composites. We determined the charge transfer per carbon atom to be 0.0023/C, 0.0018/C and 0.0008/C for 0.05 wt%, 0.5 wt% and 5 wt% SWCNT inclusions, respectively, taking into account the contributions from the softening of the lattice constant and the nonadiabatic (dynamic) effects at the Fermi level. This report provides an experimental, alternative pathway to hole-doping of MgB2 without appealing to chemical substitution.

  12. MgB_{2} nonlinear properties investigated under localized high rf magnetic field excitation

    Directory of Open Access Journals (Sweden)

    Tamin Tai

    2012-12-01

    Full Text Available The high transition temperature and low surface resistance of MgB_{2} attracts interest in its potential application in superconducting radio frequency accelerating cavities. However, compared to traditional Nb cavities, the viability of MgB_{2} at high rf fields is still open to question. Our approach is to study the nonlinear electrodynamics of the material under localized rf magnetic fields. Because of the presence of the small superconducting gap in the π band, the nonlinear response of MgB_{2} at low temperature is potentially complicated compared to a single-gap s-wave superconductor such as Nb. Understanding the mechanisms of nonlinearity coming from the two-band structure of MgB_{2}, as well as extrinsic sources of nonlinearity, is an urgent requirement. A localized and strong rf magnetic field, created by a magnetic write head, is integrated into our nonlinear-Meissner-effect scanning microwave microscope [T. Tai et al., IEEE Trans. Appl. Supercond. 21, 2615 (2011ITASE91051-822310.1109/TASC.2010.2096531]. MgB_{2} films with thickness 50 nm, fabricated by a hybrid physical-chemical vapor deposition technique on dielectric substrates, are measured at a fixed location and show a strongly temperature-dependent third harmonic response. We propose that several possible mechanisms are responsible for this nonlinear response.

  13. Evaluations of MgB2 Coatings on 2'' Copper Discs for Superconducting Radio Frequency Applications

    Science.gov (United States)

    Withanage, Wenura; Tan, Teng; Lee, Namhoon; Banjade, Huta; Eremeev, Grigory; Welander, Paul; Valente-Feliciano, Anne-Marie; Kustom, Robert; Wolak, Matthäus; Nassiri, Alireza; Xi, Xiaoxing

    We propose that coating the inner walls of copper RF cavities with superconducting MgB2 (Tc = 39 K) can result in a viable alternative to the already established niobium-based SRF technology. This approach improves the thermal conductivity, allows for operation at higher temperatures, and reduces the need for large helium refrigeration, thereby resulting in lower operational costs. For our studies, we grew MgB2 films via hybrid physical chemical vapor deposition (HPCVD) on 2'' Cu substrates. Since Mg and Cu readily form an alloy at higher temperatures, the HPCVD setup was modified in order to achieve lower deposition temperatures, minimize alloy formation, and provide high quality MgB2 films. This method yielded MgB2 coatings on 2'' Cu discs with transition temperatures around 38 K. The samples were characterized with regards to their RF attributes and showed similar performance in comparison to Nb reference samples. The presented results show that MgB2 coated copper can be a suitable alternative for use in SRF cavities.

  14. Energy gap in MgB2 superconductor: Andreev reflection studies

    International Nuclear Information System (INIS)

    Aswal, D.K.

    2003-01-01

    To investigate the nature of energy gap in MgB 2 superconductor, we have performed Andreev-reflection studies on MgB 2 / Ag planar junctions. The differential resistance (dV/dI) versus voltage (V) characteristics were recorded as a function of temperature, magnetic field and junction-type. The dV/dI vs V characteristic recorded at low temperature and zero-field for a clean MgB 2 / Ag planar junction exhibited several interesting features, such as, zero bias anomaly, a distinct double-minima, sharp resonance peaks near the energy gap etc. The data, however, could not be explained using Blonder-Tinkham-Klapwijk theory of isotropic superconductor, which indicated that energy gap in MgB 2 is not consistent with the weak-coupling BCS theory. This is further supported by unusual temperature and magnetic field dependence of the tunneling characteristics. The results indicate several possibilities for the energy gap in MgB 2 , such as, an anisotropic energy gap, two-energy or an unconventional gap scenario. (author)

  15. Design of MgB2 superconducting dipole magnet for particle beam transport in accelerators

    DEFF Research Database (Denmark)

    Abrahamsen, A.B.; Zangenberg, N.; Baurichter, A.

    2006-01-01

    for the collaborating company Danfysik A/S, which has a strongtradition in building resistive magnets for particle accelerators[4]. A technology transfer project was formulated at the end of 2005 with the purpose to collect the knowledge about the MgB2 superconductor gained in the STVF program and in the European...... in a dipole magnet for guiding particle beams in a small scale accelerator is examined with the purpose to build lighter and smaller than the present resistive magnets. Here the criticalcurrent density of primarily MgB2 will be compared with current density determined by specifications similar to the Tevatron...... accelerator, B = 4:4 Tesla and coil aperture D = 76 mm [6], which has been identified by Danfysik A/S as interesting. It isconcluded that MgB2 is useful for the dipole application and construction of a small test coil of one half of the magnet is planned in 2007....

  16. Microstructure and pinning properties of hexagonal-disc shaped single crystalline MgB2

    Science.gov (United States)

    Jung, C. U.; Kim, J. Y.; Chowdhury, P.; Kim, Kijoon H.; Lee, Sung-Ik; Koh, D. S.; Tamura, N.; Caldwell, W. A.; Patel, J. R.

    2002-11-01

    We synthesized hexagonal-disc-shaped MgB2 single crystals under high-pressure conditions and analyzed the microstructure and pinning properties. The lattice constants and the Laue pattern of the crystals from x-ray micro-diffraction showed the crystal symmetry of MgB2. A thorough crystallographic mapping within a single crystal showed that the edge and c axis of hexagonal-disc shape exactly matched the [101¯0] and the [0001] directions of the MgB2 phase. Thus, these well-shaped single crystals may be the best candidates for studying the direction dependences of the physical properties. The magnetization curve and the magnetic hysteresis curve for these single crystals showed the existence of a wide reversible region and weak pinning properties, which supported our single crystals being very clean.

  17. Possible superlattice formation in high-temperature treated carbonaceous MgB2 at elevated pressure

    International Nuclear Information System (INIS)

    Tschauner, Oliver; Errandonea, Daniel; Serghiou, George

    2006-01-01

    We report indications of a phase transition in carbonaceous MgB 2 above 9 GPa at 300 K after stress relaxation by laser heating. The transition was detected using Raman spectroscopy and X-ray diffraction. The observed changes are consistent with a second-order structural transition involving a doubling of the unit cell along c and a reduction of the boron site symmetry. Moreover, the Raman spectra suggest a reduction in electron-phonon coupling in the slightly modified MgB 2 structure consistent with the previously proposed topological transition in MgB 2 . However, further attributes including deviatoric stress, lattice defects, and compositional variation may play an important role in the observed phenomena

  18. Low-temperature synthesis of superconducting nanocrystalline MgB2

    International Nuclear Information System (INIS)

    Lu, J.; Xiao, Z.; Lin, Q.; Claus, H.; Fang, Z.Z.

    2010-01-01

    Magnesium diboride (MgB 2 ) is considered a promising material for practical application in superconducting devices, with a transition temperature near 40 K. In the present paper, nanocrystalline MgB 2 with an average particle size of approximately 70 nm is synthesized by reacting LiBH 4 with MgH 2 at temperatures as low as 450 C. This synthesis approach successfully bypasses the usage of either elemental boron or toxic diborane gas. The superconductivity of the nanostructures is confirmed by magnetization measurements, showing a superconducting critical temperature of 38.7 K.

  19. Crystallinity and flux pinning properties of MgB2 bulks

    International Nuclear Information System (INIS)

    Yamamoto, A.; Shimoyama, J.; Ueda, S.; Katsura, Y.; Iwayama, I.; Horii, S.; Kishio, K.

    2006-01-01

    The relationship between flux pinning properties and crystallinity of MgB 2 bulks was systematically studied. Improved flux pinning properties under high fields were observed for samples with low crystallinity. Increased impurity scattering due to strain and defects in lattice corresponding to the degraded crystallinity was considered to enhance flux pinning strength at grain boundaries. Low-temperature synthesis and carbon substitution were confirmed to be effective for degrading crystallinity of MgB 2 bulks, resulting in high critical current properties under high fields

  20. Properties of stabilized MgB2 composite wire with Ti barrier

    International Nuclear Information System (INIS)

    Kovac, P; Husek, I; Melisek, T; Holubek, T

    2007-01-01

    Stabilized four-filament in situ MgB 2 /Ti/Cu/Monel composite wire was produced by the rectangular wire-in-tube (RWIT) technique. 10 wt% of nanosize SiC was added into the Mg-B powder mixture, which was packed into the Ti/Cu and Monel tubes, respectively. The assembled composite was two-axially rolled into wire and/or tape form and sintered at temperatures of 650-850 deg. C/0.5 h. Stabilized MgB 2 wire with Ti barrier is studied in terms of field-dependent transport critical current density, effects of filament size reduction and thermal stability

  1. Preparation of MgB2 superconducting microbridges by focused ion beam direct milling

    Science.gov (United States)

    Zhang, Xuena; Li, Yanli; Xu, Zhuang; Kong, Xiangdong; Han, Li

    2017-01-01

    MgB2 superconducting microbridges were prepared by focused ion beam (FIB) direct milling on MgB2 films. The surface topography of the microbridges were observed using SEM and AFM and the superconductivity was measured in this paper. Lots of cracks and holes were found near the milled area. And the superconducting transition temperature was decreased a lot and the bridges prepared were not superconducting due to ion damage after milled with large dose. Through these works, we explored the effect regular of FIB milling and experimental parameters on the performance of microbridges.

  2. Superconducting and normal state properties of carbon doped and neutron irradiated MgB2

    International Nuclear Information System (INIS)

    Wilke, R.H.T.; Samuely, P.; Szabo, P.; Holanova, Z.; Bud'ko, S.L.; Canfield, P.C.; Finnemore, D.K.

    2007-01-01

    Current research in MgB 2 focuses on the effects various types of perturbations have on the superconducting properties of this novel two-gap superconductor. In this article we summarize the effects of carbon doping and neutron irradiation in bulk MgB 2 . Low levels of carbon doping and light neutron irradiation result in significant enhancements in H c2 . At high fluences, where superconductivity is nearly fully suppressed, superconductivity can be restored through post exposure annealing. However, this results in a change in the interdependencies of the normal state and superconducting properties (ρ 0 , T c , H c2 ), with little or no enhancement in H c2

  3. The preliminary study of the quench protection of an MgB2

    Science.gov (United States)

    Juster, F. P.; Berriaud, C.; Bonelli, A.; Pasquet, R.; Przybilski, H.; Schild, T.; Scola, L.

    2014-01-01

    In the framework of general studies currently carried out at CEA/Saclay in collaboration with Sigmaphi Company on dry MgB2 magnet operating at 10 K and medium range field, 1 T up to 4 T., we plan to build a prototype-coil with a commercial MgB2 wire. This coil, the nominal axial magnetic field of which is 1 tesla, will be placed in a 3 teslas background field generated by a classical NbTi coil. This paper deals with the preliminary quench protection studies including stability and quench propagation modeling.

  4. Evaluation of carbon incorporation and strain of doped MgB2 superconductor by Raman spectroscopy

    International Nuclear Information System (INIS)

    Yeoh, W.K.; Zheng, R.K.; Ringer, S.P.; Li, W.X.; Xu, X.; Dou, S.X.; Chen, S.K.; MacManus-Driscoll, J.L.

    2011-01-01

    Raman spectroscopy is employed to study both the strain and the carbon substitution level in SiC-doped MgB 2 bulk samples. Raman spectroscopy was demonstrated to be a better method to distinguish the individual influences of strain and carbon than standard X-ray diffraction. It is found that the lattice parameter correlation method for C content determination is invalid for highly strained samples. Our result also provides an alternative explanation for lattice variation in non-carbon-doped MgB 2 , which is basically due to lattice strain.

  5. Defect structures in MgB2 wires introduced by hot isostatic pressing

    International Nuclear Information System (INIS)

    Liao, X Z; Serquis, A; Zhu, Y T; Civale, L; Hammon, D L; Peterson, D E; Mueller, F M; Nesterenko, V F; Gu, Y

    2003-01-01

    The microstructures of MgB 2 wires prepared by the powder-in-tube technique and subsequent hot isostatic pressing were investigated using transmission electron microscopy. A large amount of crystalline defects including small-angle twisting, tilting and bending boundaries, in which high densities of dislocations reside, was found forming sub-grains within MgB 2 grains. It is believed that these defects resulted from particle deformation during the hot isostatic pressing process and are effective flux pinning centres that contribute to the high critical current densities of the wires at high temperatures and at high fields

  6. Quantitative electron microscopy and spectroscopy of MgB2 wires and tapes

    International Nuclear Information System (INIS)

    Birajdar, B; Peranio, N; Eibl, O

    2008-01-01

    In MgB 2 the correlation of microstructure with superconducting properties, in particular the critical current density, requires powerful analytical tools. Critical current densities and electrical resistivities of different MgB 2 superconductors differ by orders of magnitudes and the current limiting mechanisms have not been fully understood. Granularity of MgB 2 is one significant reason for reduced critical current densities and is introduced intrinsically by the anisotropy of B c2 but also extrinsically by the microstructure of the material. B c2 enhancement by doping is another important challenge for chemical analysis and, at present, doping levels are not well controlled on the sub-μm scale. In this paper the quantitative electron microscopy and spectroscopy methods essential for the microstructural analysis of MgB 2 are described. By quantitative electron microscopy and spectroscopy we mean a combined SEM and TEM analysis that covers various length scales from μm to nm. Contamination-free sample preparation, chemical mapping including B, and advanced chemical quantification using x-ray microanalysis were essential elements of the applied methodology. The methodology was applied to in situ and ex situ MgB 2 wires and tapes with and without SiC additives. Quantitative B analysis by EDX spectroscopy was applied quantitatively in the SEM and TEM, which is a major achievement. Although MgB 2 is a binary system, the thermodynamics of phase formation is complex, and the complexity is dramatically increased if additives like SiC are used. The small, sub-μm grain sizes of the matrix and secondary phases require TEM methods. However, granularity on the μm scale was also identified and underlines the importance of the combined SEM and TEM studies. Significant differences in the microstructure were observed for in situ and ex situ samples. This holds particularly if SiC was added and yielded Mg 2 Si for in situ samples annealed at 600-650 deg. C and Mg-Si-O phases for ex situ samples annealed between 900-1050 deg. C. Only with such a systematic approach combining a large number of microscopy and spectroscopy methods, could a microstructure critical current density model be established that will be presented in another paper. Four microstructural parameters were identified as relevant for the critical current density of wires and tapes and these were: (1) MgB 2 grain size, (2) colony size (a colony is a dense arrangement of MgB 2 grains), (3) oxygen content and (4) volume fraction of B-rich secondary phases. MgB 2 grain size can only be determined by TEM, while colony size, oxygen content and volume fraction of B-rich secondary phases were determined by SEM methods. The formation of oxides was also studied in detail by TEM methods. The importance of electron microscopy methods in the understanding of the thermodynamics of phase formation in MgB 2 as well as in improving the synthesis technology and the superconducting properties of MgB 2 wires and tapes is described. (topical review)

  7. RAPID COMMUNICATION: Formation of MgB2 at ambient temperature with an electrochemical process: a plausible mechanism

    Science.gov (United States)

    Jadhav, A. B.; Subhedar, K. M.; Hyam, R. S.; Talaptra, A.; Sen, Pintu; Bandyopadhyay, S. K.; Pawar, S. H.

    2005-06-01

    The binary intermetallic MgB2 superconductor has been synthesized by many research groups. However, the mechanism of its formation is not clearly understood. In this communication, a comprehensive mechanism of the formation of MgB2 from Le Chatelier's principle of equilibrium reaction has been explained both for solid-state reaction and electrodeposition methods.

  8. An innovative technique to synthesize C-doped MgB2 by using chitosan as the carbon source

    International Nuclear Information System (INIS)

    Bovone, G; Kawale, S; Siri, A S; Vignolo, M; Bernini, C

    2014-01-01

    Here, we report a new technique to synthesize carbon-doped MgB 2 powder. Chitosan was innovatively used as the carbon source during the synthesis of boron from boron oxide. This allowed the introduction of local defects, which later on served as pinning centers in MgB 2 , in the boron lattice itself, avoiding the traditional and time consuming ways of ex situ MgB 2 doping (e.g. ball milling). Two volume percentages of C-doping have been tried and its effect on the superconducting properties, evaluated by magnetic and transport measurements, are discussed here. Morphological analysis by scanning electron microscopy revealed nano-metric grains’ distribution in the boron and MgB 2 powder. Mono-filamentary MgB 2 wires have been fabricated by an ex situ powder-in-tube technique by using the thus prepared carbon-doped MgB 2 and pure MgB 2 powders. Transport property measurements on these wires were made and compared with MgB 2 wire produced using commercial boron. (fast track communication)

  9. Development of magnesium diboride (MgB 2) wires and magnets using in situ strand fabrication method

    Science.gov (United States)

    Tomsic, Michael; Rindfleisch, Matthew; Yue, Jinji; McFadden, Kevin; Doll, David; Phillips, John; Sumption, Mike D.; Bhatia, Mohit; Bohnenstiehl, Scot; Collings, E. W.

    2007-06-01

    Since 2001 when magnesium diboride (MgB 2) was first reported to have a transition temperature of 39 K, conductor development has progressed to where MgB 2 superconductor wire in kilometer-long piece-lengths has been demonstrated in magnets and coils. Work has started on demonstrating MgB 2 wire in superconducting devices now that the wire is available commercially. MgB 2 superconductors and coils have the potential to be integrated in a variety of commercial applications such as magnetic resonance imaging, fault current limiters, transformers, motors, generators, adiabatic demagnetization refrigerators, magnetic separation, magnetic levitation, energy storage, and high energy physics applications. This paper discusses the progress on MgB 2 conductor and coil development in the last several years at Hyper Tech Research, Inc.

  10. Development of magnesium diboride (MgB2) wires and magnets using in situ strand fabrication method

    International Nuclear Information System (INIS)

    Tomsic, Michael; Rindfleisch, Matthew; Yue, Jinji; McFadden, Kevin; Doll, David; Phillips, John; Sumption, Mike D.; Bhatia, Mohit; Bohnenstiehl, Scot; Collings, E.W.

    2007-01-01

    Since 2001 when magnesium diboride (MgB 2 ) was first reported to have a transition temperature of 39 K, conductor development has progressed to where MgB 2 superconductor wire in kilometer-long piece-lengths has been demonstrated in magnets and coils. Work has started on demonstrating MgB 2 wire in superconducting devices now that the wire is available commercially. MgB 2 superconductors and coils have the potential to be integrated in a variety of commercial applications such as magnetic resonance imaging, fault current limiters, transformers, motors, generators, adiabatic demagnetization refrigerators, magnetic separation, magnetic levitation, energy storage, and high energy physics applications. This paper discusses the progress on MgB 2 conductor and coil development in the last several years at Hyper Tech Research, Inc

  11. Feasibility study on partial insulation winding technique for the development of self-protective MgB2 magnet

    Science.gov (United States)

    Kim, Y. G.; Kim, J. C.; Kim, J. M.; Yoo, B. H.; Hwang, D. Y.; Lee, H. G.

    2018-06-01

    This study investigates the feasibility of using the partial insulation winding technique for the development of a self-protective MgB2 MRI magnet with a fast charge-discharge rate. Charge-discharge and quench tests for a prototype PI MgB2 magnet confirmed that the magnet was successfully operated at full-field performance and exhibited self-protecting behavior in the event of a quench. Nonetheless, the required time to charge the 0.5-T/300-mm PI MgB2 magnet was almost five days, implying that the charge-discharge delay of the PI MgB2 magnet still needs to be ameliorated further to develop a real-scale MgB2 MRI magnet with a fast charge-discharge rate.

  12. Composite superconducting MgB2 wires made by continuous process

    NARCIS (Netherlands)

    Kutukcu, Mehmet; Atamert, Serdar; Scandella, Jean Louis; Hopstock, Ron; Blackwood, Alexander C.; Dhulst, Chris; Mestdagh, Jan; Nijhuis, Arend; Glowacki, Bartek A.

    Previously developed manufacturing technology of a low-cost composite single core MgB2 superconductive wires has been investigated in details using monel sheath and titanium diffusion barrier. In this process Mg and nano-sized B as well as SiC dopant powders were fed continuously to a "U" shaped

  13. Critical current and cryogenic stability modelling of filamentary MgB2 conductors

    DEFF Research Database (Denmark)

    Glowacki, B.A.; Majoros, M.; Tanaka, K.

    2006-01-01

    The modelling of a single filament, 6 filaments and 19 filaments MgB(2) conductors was performed for two limiting cases: a) isothermal conditions considering J(c)(B) dependence, b) considering heating effects but with J(c) magnetic field independent. As a starting point of the modelling in case a...

  14. Composite superconducting MgB2 wires made by continuous process

    NARCIS (Netherlands)

    Kutukcu, Mehmet; Atamert, Serdar; Scandella, Jean Louis; Hopstock, Ron; Blackwood, Alexander C.; Dhulst, Chris; Mestdagh, Jan; Nijhuis, Arend; Glowacki, Bartek A.

    2018-01-01

    Previously developed manufacturing technology of a low-cost composite single core MgB2 superconductive wires has been investigated in details using monel sheath and titanium diffusion barrier. In this process Mg and nano-sized B as well as SiC dopant powders were fed continuously to a "U" shaped

  15. Two ways to model voltage-current curves of adiabatic MgB2 wires

    International Nuclear Information System (INIS)

    Stenvall, A; Korpela, A; Lehtonen, J; Mikkonen, R

    2007-01-01

    Usually overheating of the sample destroys attempts to measure voltage-current curves of conduction cooled high critical current MgB 2 wires at low temperatures. Typically, when a quench occurs a wire burns out due to massive heat generation and negligible cooling. It has also been suggested that high n values measured with MgB 2 wires and coils are not an intrinsic property of the material but arise due to heating during the voltage-current measurement. In addition, quite recently low n values for MgB 2 wires have been reported. In order to find out the real properties of MgB 2 an efficient computational model is required to simulate the voltage-current measurement. In this paper we go back to basics and consider two models to couple electromagnetic and thermal phenomena. In the first model the magnetization losses are computed according to the critical state model and the flux creep losses are considered separately. In the second model the superconductor resistivity is described by the widely used power law. Then the coupled current diffusion and heat conduction equations are solved with the finite element method. In order to compare the models, example runs are carried out with an adiabatic slab. Both models produce a similar significant temperature rise near the critical current which leads to fictitiously high n values

  16. The Raman spectrum and lattice parameters of MgB2 as a function of temperature

    International Nuclear Information System (INIS)

    Shi Lei; Zhang Huarong; Chen Lin; Feng Yong

    2004-01-01

    The temperature dependences of the Raman spectrum and lattice parameters of polycrystalline MgB 2 have been investigated by means of Raman spectroscopy and x-ray diffraction. It is found that the lattice parameters show an approximately linear change with the temperature decrease, giving different thermal expansions along the a- and c-axes, which is caused by the comparatively weak metal-boron bonding in MgB 2 . The grain size of MgB 2 determined by means of x-ray diffraction is around 45 nm for both [100] and [001] directions. There is no evidence for any structural transition while the temperature changes from 300 K down to 12 K. An anomalous Raman band at 603 cm -1 is observed, which is consistent with the theoretical prediction for the E 2g in-plane boron stretching mode. The Raman frequency increases and the linewidth decreases as the temperature decreases. A possible origin of the temperature dependences of the Raman frequency and the linewidth is discussed. It is suggested that the grain size effect of MgB 2 on the nanometric scale will have a clear influence on the frequency and the linewidth of the Raman spectrum

  17. Design of an MgB2 race track coil for a wind generator pole demonstration

    DEFF Research Database (Denmark)

    Abrahamsen, Asger Bech; Magnusson, Niklas; Jensen, Bogi Bech

    2014-01-01

    An MgB2 race track coil intended for demonstrating a down scaled pole of a 10 MW direct drive wind turbine generator has been designed. The coil consists of 10 double pancake coils stacked into a race track coil with a cross section of 84 mm × 80 mm. The length of the straight section is 0.5 m...

  18. Electrical, Structural and Mechanical Properties of Superconducting MGB2/MG Composites

    International Nuclear Information System (INIS)

    Ulucan, S.

    2004-01-01

    The brittle nature of MgB 2 does not allow this material to be used as a stand-alone material for large scale applications based on wire production. MgB 2 /Mg composites were prepared using metal matrix composite fabrication technique. To obtain composites MgB 2 and Mg powders were mixed at different weight fractions and uniaxially pressed in a cylindrical dye under the pressure of 0.5 GPa and 1.0 GPa for two hours at various temperatures. XRD, SEM and EDX techniques were used for phase identification and microstructural studies. Resistivities of the composites were measured between 20 K and room temperature. The effect of temperature on the mechanical properties of MgB 2 /Mg composites was investigated. For this purpose, compressive mechanical testing was performed to measure elastic modulus and strain at failure values of the composites. It was found that the relative weight fraction of the powders and the temperature have same considerable effect on the electrical, microstructural and the mechanical properties of the composites

  19. Microwave Synthesis and Magnetic Properties of High Tc Superconductor MGB2

    International Nuclear Information System (INIS)

    Koeseoglu, Y.

    2004-01-01

    Polycrystalline powders of MgB 2 have been synthesized by microwave synthesis technique. Crystallographic information of the sample was investigated by powder X-ray diffraction (XRD). The main phase was determined as MgB2, and secondary phases as MgB4 and MgO. The temperature dependence of magnetic properties of polycrystalline MgB2, synthesized by using microwave heating of the constituents have been characterized by SQUID magnetometer and X-band EPR spectrometer. The transition temperature to the superconducting phase is observed as 39K for both measurements. An isotropic, strong and very narrow EPR signal corresponding to free electron g-value (ge=2.0023) is observed. The observed line broadening with decreasing temperature might arise from the dipolar interactions between the superparamagnetic nanoparticles. Normally, the internal magnetic field originating from magnetic entities is expected to be more uniform as a result of highly ordered magnetic moments at low temperatures; giving narrower ESR line in contrary in our case. While the ESR line is broadened, the signal intensity is drastically decreased just below T c =39 K corresponding to a transition temperature from normal to superconducting state. Some minor changes in both intensity and line width curves might be taken as signs for changes of local crystalline field symmetry around weakly localized conduction electrons or holes, which are the sources of ESR signal in MgB 2 compound

  20. Superconducting properties of MgB2 particle impregnated with Mg-based alloys

    International Nuclear Information System (INIS)

    Shimizu, Yusuke; Matsuda, Kenji; Mizutani, Manabu; Nishimura, Katsuhiko; Kawabata, Tokimasa; Ikeno, Susumu; Hishinuma, Yoshimitsu; Aoyama, Shigeki

    2011-01-01

    The three-dimensional penetration method combined with semi-solid casting (SS-3DPC) was utilized to prepare magnesium diboride (MgB 2 ) powder composite materials with various host materials of Mg, Mg-3%Al, Mg-3%Al-1%Zn, Mg-9%Al, and Mg-9%Al-1%Zn. X-ray diffraction measurements indicated predominant peak patterns of MgB 2 and a host alloy, implying that the host material tightly bonded MgB 2 grains without melting the MgB 2 powder. This was confirmed by SEM images. Measured electrical resistivity and magnetization versus temperature showed clear signals of superconducting transition temperature of 27-38 K for all the samples cut out from the billets. Magnetic hysteresis loop observed at 5 K enabled us to estimate a critical current density (J c ) based on the extended Bean model. Additions of aluminum and zinc elements to magnesium host-matrix were found to enhance J c and increase residual resistivity (ρ 0 ) suggesting that aluminum and zinc have an effect on pinning magnetic flux flow for J c enhancement, and scattering conduction electrons for increase of ρ 0 . (author)

  1. Low-temperature dependence of the optical conductivity in superconductor MgB2

    International Nuclear Information System (INIS)

    Shahzamanian, M.A.; Yavary, H.; Moarrefi, M.

    2005-01-01

    The real part of the optical conductivity is calculated by using the Kubo formula approach, and in the framework of the two-bands model. It is shown that a single-gap model is insufficient to describe the optical behavior of superconductor MgB 2 film, but the two-gap model with different symmetries is sufficient to explain the experimental results

  2. Doping effects of carbon and titanium on the critical current density of MgB2

    International Nuclear Information System (INIS)

    Shen, T M; Li, G; Cheng, C H; Zhao, Y

    2006-01-01

    MgB 2 bulks doped with Ti or/and C were prepared by an in situ solid state reaction method to determine the combined effect of C and Ti doping and to probe the detailed mechanism. The magnetization measurement shows that Mg 0.95 Ti 0.05 B 1.95 C 0.05 sample has significantly improved flux pinning compared to the MgB 1.95 C 0.05 sample at 20 K, indicating that C and Ti are largely cooperative in improving the J c (H) behaviour. No TiC phase was detected in the x-ray diffraction (XRD) patterns. Moreover, the overlap of the (100) peaks of MgB 1.95 C 0.05 and Mg 0.95 Ti 0.05 B 1.95 C 0.05 showed that Ti doping does not reduce the amount of C in MgB 2 . Microstructural analyses revealed that the addition of Ti eliminated the porosity present in the carbon-doped MgB 2 pellet, resulting in an improved intergrain connectivity and an increase of effective current pass. Further, MgB 2 doped with C and Ti, which mainly consists of spherical grains about 200-300 nm in size, shows an higher grain homogeneity than the C-doped sample, suggesting that the Ti doping in MgB 1-x C x has played an important role in obtaining uniform grains

  3. MgB2-Based Bolometer Array for Far Infra-Red Thermal Imaging and Fourier Transform Spectroscopy Applications

    Science.gov (United States)

    Lakew, B.; Aslam, S.; Brasunas, J.

    2012-01-01

    The mid-superconducting critical temperature (T(sub c) approximately 39 K) of the simple binary, intermetallic MgB, [1] makes it a very good candidate for the development of the next generation of electrooptical devices (e.g. [2]). In particular, recent advances in thin film deposition teclmiques to attain higb quality polycrystalline thin film MgB, deposited on SiN-Si substrates, with T(sub c) approximately 38K [3] coupled with the low voltage noise performance of the film [4] makes it higbly desirable for the development of moderately cooled bolometer arrays for integration into future space-bourne far infra-red (FIR) spectrometers and thermal mappers for studying the outer planets, their icy moons and other moons of interest in the 17-250 micrometer spectral wavelength range. Presently, commercially available pyroelectric detectors operating at 300 K have specific detectivity, D(*), around 7 x 10(exp 8) to 2 x 10(exp 9) centimeters square root of Hz/W. However, a MgB2 thin film based bolometer using a low-stress (less than 140 MPa) SiN membrane isolated from the substrate by a small thermal conductive link, operating at 38 K, promises to have two orders of magnitude higher specific detectivity [5][6].

  4. Multiple superconducting gaps in MgB2 single crystals from magnetic torque

    International Nuclear Information System (INIS)

    Atsumi, Toshiyuki; Xu, Mingxiang; Kitazawa, Hideaki; Ishida, Takekazu

    2004-01-01

    We have measured the magnetic torque of an MgB 2 single crystal in the various different fields below 10 kG by using a torque magnetometer and a 4 K closed cycle refrigerator. The MgB 2 single crystal was synthesized by the vapor transport method. The torque can be measured as an off-balance signal of the Wheatstone bridge of the four piezoresistors on a Si cantilever. The torque curves are analyzed by the Kogan model. The superconducting anisotropy γ is rather independent of temperature in 5 and 10 kG, but is dependent on field up to 60 kG. We consider that the field dependence of γ comes from the nature of the multiple superconducting gaps. The experimental results show that the π-band superconducting gaps have been deteriorated gradually up to a crossover field H * (π) ∼ 20 kG at 10 K when the magnetic field increases

  5. Influence of iridium doping in MgB2 superconducting wires

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude

    2018-01-01

    MgB2 wires with iridium doping were manufactured using the in-situ technique in a composite Cu-Nb sheath. Reaction was performed at 700°C, 800°C or 900°C for 1h in argon atmosphere. A maximum of about 1.5 at.% Ir replaces Mg in MgB2. The superconducting transition temperature is slightly lowered...... by Ir doping. The formation of IrMg3 and IrMg4 secondary phase particles is evidenced, especially for a nominal stoichiometry with 2.0 at.% Ir doping. The critical current density and accommodation field of the wires are strongly dependent on the Ir content and are generally weakened in the presence...

  6. Mixed-state flux dynamics in bulk MgB2

    International Nuclear Information System (INIS)

    Li Shi; Taylor, B.J.; Frederick, N.A.; Maple, M.B.; Nesterenko, V.F.; Indrakanti, S.S.

    2002-01-01

    Electric field vs. current density (E-J) isotherms in the mixed-state of a bulk sample of the high-temperature superconductor MgB 2 (T c =38.5 K), synthesized under 200 MPa pressure by hot isostatic pressing (HIPing), have been measured and analyzed in terms of the critical scaling model. Magnetization data reveal distinctly different critical current density (J c ) behaviors in high and low magnetic field critical scaling regions. E-J isotherm sets at fields ranging from 2 to 90 kOe conform to the vortex-glass (VG) scaling anzatz. Scaling analysis, resistivity data and J c data suggest that a Bragg-glass state may exist for H c2 (T), the VG transition line H g (T), and the magnetic irreversibility line H irr (T) has been established for bulk MgB 2

  7. Effect of sheath material on critical current characteristics of MgB2 at high temperatures

    International Nuclear Information System (INIS)

    Kiuchi, M.; Yamauchi, K.; Kurokawa, T.; Otabe, E.S.; Matsushita, T.; Okada, M.; Tanaka, K.; Kumakura, H.; Kitaguchi, H.

    2004-01-01

    Critical current density and irreversibility field were measured at various temperatures and magnetic fields for MgB 2 PIT tape specimens with different sheaths materials. The experimental results were compared with theoretical estimations using the flux creep-flow model. It is found that the hardness of sheath material indirectly affects the pinning property only through the packing density of MgB 2 . It is considered that the critical current density is mainly determined by a low value of distributed local critical current density determined by grain connectivity. On the other hand, the irreversibility field which is approximately the same among the three tapes is mainly determined by the average pinning strength

  8. MgB2 superconducting particles in a strong electric field

    International Nuclear Information System (INIS)

    Tao, R.; Xu, X.; Amr, E.

    2003-01-01

    The electric-field induced ball formation has been observed with MgB 2 powder in a strong static or quasi-static electric field. The effect of temperature and magnetic field on the ball formation shows surprising features. For quite a wide range of temperature from T c =39 K and below, the ball size is proportional to (1-T/T c ). As the temperature further goes below 20 K, the ball size becomes almost a constant. If MgB 2 particles are in a strong electric field and a moderate magnetic field, the electric-field induced balls align in the magnetic-field direction to form ball chains

  9. Effects of disorder on the microwave properties of MgB2 polycrystalline films

    International Nuclear Information System (INIS)

    Ghigo, G.; Gerbaldo, R.; Gozzelino, L.; Laviano, F.; Mezzetti, E.; Ummarino, G. A.

    2006-01-01

    The role of disorder in superconducting magnesium diboride (MgB 2 ) policrystalline films is investigated in the high frequency range by a coplanar microwave resonator technique. Two sources of disorder are considered, heavy-ion irradiation damage and sample ageing. Microwave measurements are analyzed in the framework of the two-gap model with strong interband scattering contribution. It turns out that disorder enhancement increases the interband scattering rate, resulting in a reduction of the surface resistance at low temperatures, due to a slight increase of the π gap. Moreover, increasing disorder at grain boundaries induces a nonmonotonic residual surface resistance, showing the features of a resistive behavior for the highest disorder level. Finally, the effects of the different kinds of disorder on the intrinsic and on the grain-boundary properties of the MgB 2 films are compared and discussed

  10. Raman spectra of MgB2 at high pressure and topological electronic transition

    International Nuclear Information System (INIS)

    Meletov, K.P.; Kulakov, M.P.; Kolesnikov, N.N.; Arvanitidis, J.; Kourouklis, G.A.

    2002-01-01

    Raman spectra of the MgB 2 ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at ∼ 590 cm -1 related to the E 2g phonon mode. The frequency of this mode exhibits a strong linear dependence in the pressure region from 5 to 18 GPa, whereas beyond this region the slope of the pressure-induced frequency shift is reduced by about a factor of two. The pressure dependence of the phonon mode up to ∼ 5 GPa exhibits a change in the slope as well as a hysteresis effect in the frequency vs. pressure behavior. These singularities in the E 2g mode behavior under pressure support the suggestion that MgB 2 may undergo a pressure-induced topological electronic transition [ru

  11. Low-field vortex pinning model for undoped sintered MgB2 powders

    International Nuclear Information System (INIS)

    Agassi, Y D

    2011-01-01

    Sintered MgB 2 powders constitute a porous ensemble of irregularly shaped agglomerates of tightly packed grains. The low-field critical current density in such powders was experimentally observed to scale with the inverse of the average agglomerate size. Motivated by this observation we consider a flux pinning model which accounts for the MgB 2 powder porosity by focusing on a single finite-size agglomerate size. According to the model the observed critical current density dependence on the agglomerate size reflects the outward pull exerted on a vortex that is pinned in proximity to the agglomerate edges. The calculated critical current density replicates the observed scaling within agglomerate-size bounds. Implications of the model are discussed.

  12. Small Fermi energy, strong electron-phonon effects and anharmonicity in MgB2

    International Nuclear Information System (INIS)

    Cappelluti, E.; Pietronero, L.

    2007-01-01

    The investigation of the electron-phonon properties in MgB 2 has attracted a huge interest after the discovery of superconductivity with T c 39 K in this compound. Although superconductivity is often described in terms of the conventional Eliashberg theory, properly generalized in the multiband/multigap scenario, important features distinguish MgB 2 from other conventional strong-coupling superconductors. Most important it is the fact that a large part of the total electron-phonon strength seems to be concentrated here in only one phonon mode, the boron-boron E 2g stretching mode. Another interesting property is the small Fermi energy of the σ bands, which are strongly coupled with the E 2g mode. In this contribution, we discuss how the coexistence of both these features give rise to an unconventional phenomenology of the electron-phonon properties

  13. The MgB2 superconducting energy gaps measured by Raman spectroscopy

    International Nuclear Information System (INIS)

    Quilty, James William

    2003-01-01

    Understanding the nature of the superconducting energy gap in magnesium diboride is an essential part of understanding this unusual superconductor, and Raman scattering is a convenient and powerful technique which is able to directly measure the key physical properties of the gap. The Raman spectra of MgB 2 show clear superconductivity induced renormalisations and evidence is found for two superconducting gaps residing on the σ and π Fermi surfaces with maximum magnitudes of around 110 and 30 cm -1 . The larger gap appears as a sharp peak in the electronic Raman scattering continuum while the smaller gap manifests itself as a threshold in the low-frequency spectral intensity, indicating that the gaps form in different electronic environments. The physical properties of the gaps favour explanations of the extraordinarily high T c in MgB 2 within strong coupling theory

  14. Direct observation of superconducting gaps in MgB 2 by angle-resolved photoemission spectroscopy

    Science.gov (United States)

    Souma, S.; Machida, Y.; Sato, T.; Takahashi, T.; Matsui, H.; Wang, S.-C.; Ding, H.; Kaminski, A.; Campuzano, J. C.; Sasaki, S.; Kadowaki, K.

    2004-08-01

    High-resolution angle-resolved photoemission spectroscopy has been carried out to clarify the anomalous superconductivity of MgB 2. We observed three bands crossing the Fermi level, which are ascribed to B2p-σ, π and surface bands. We have succeeded for the first time in directly observing the superconducting gaps of these bands separately. We have found that the superconducting-gap sizes of σ and surface bands are 6.5 ± 0.5 and 6.0 ± 0.5 meV, respectively, while that of the π band is much smaller (1.5 ± 0.5 meV). The present experimental result unambiguously demonstrates the validity of the two-band superconductivity in MgB 2.

  15. Direct observation of superconducting gaps in MgB2 by angle-resolved photoemission spectroscopy

    International Nuclear Information System (INIS)

    Souma, S.; Machida, Y.; Sato, T.; Takahashi, T.; Matsui, H.; Wang, S.-C.; Ding, H.; Kaminski, A.; Campuzano, J.C.; Sasaki, S.; Kadowaki, K.

    2004-01-01

    High-resolution angle-resolved photoemission spectroscopy has been carried out to clarify the anomalous superconductivity of MgB 2 . We observed three bands crossing the Fermi level, which are ascribed to B2p-σ, π and surface bands. We have succeeded for the first time in directly observing the superconducting gaps of these bands separately. We have found that the superconducting-gap sizes of σ and surface bands are 6.5 ± 0.5 and 6.0 ± 0.5 meV, respectively, while that of the π band is much smaller (1.5 ± 0.5 meV). The present experimental result unambiguously demonstrates the validity of the two-band superconductivity in MgB 2

  16. Transport properties and Raman spectra of impurity substituted MgB2

    International Nuclear Information System (INIS)

    Masui, T.

    2007-01-01

    Recent advances in the study of MgB 2 are reviewed, with focus on the transport properties and Raman scattering measurements for impurity substituted crystals. Carbon and Aluminium substitution change band filling, introduce intraband and interband scattering. These effects are seen in the temperature dependence of resistivity, Hall coefficients, and phonon peak of Raman spectra. Manganese substitution introduces magnetic scattering, that increases resistivity but gives little change in Raman spectra. The effect of disorder in neutron irradiated samples is also discussed

  17. Surface barrier and bulk pinning in MgB$_2$ superconductor

    OpenAIRE

    Pissas, M.; Moraitakis, E.; Stamopoulos, D.; Papavassiliou, G.; Psycharis, V.; Koutandos, S.

    2001-01-01

    We present a modified method of preparation of the new superconductor MgB$_2$. The polycrystalline samples were characterized using x-ray and magnetic measurements. The surface barriers control the isothermal magnetization loops in powder samples. In bulk as prepared samples we always observed symmetric magnetization loops indicative of the presence of a bulk pinning mechanism. Magnetic relaxation measurements in the bulk sample reveal a crossover of surface barrier to bulk pinning.

  18. Design study of a 10 MW MgB2 superconductor direct drive wind turbine generator

    DEFF Research Database (Denmark)

    Abrahamsen, Asger Bech; Magnusson, Niklas; Liu, Dong

    2014-01-01

    A design study of a 10 MW direct drive wind turbine generator based on MgB2 superconducting wires is presented and the cost of the active materials of the generator is estimated to be between 226 €/kW and 84 €/kw, which is lower than the threshold values of 300 €/kW of the INNWIND.EU project. A n...

  19. Tunneling Spectroscopy of the Energy Gap in MgB2 Under Magnetic Fields

    International Nuclear Information System (INIS)

    Ekino, T.; Takasaki, T.; Fujii, H.; Muranaka, T.; Akimitsu, J.

    2003-01-01

    Effects of magnetic field on the multiple-gap structure in the superconductor MgB 2 have been studied by break junctions. With increasing the field, the gap value decreases with filling up of the states inside of the gap. The gap-closing field B c correlates with the gap size. The extrapolated B c value for the larger gap is almost consistent with the upper critical field of this compound. (author)

  20. Intraband scattering studies in carbon- and aluminium-doped MgB2

    International Nuclear Information System (INIS)

    Samuely, P.; Szabo, P.; Hol'anova, Z.; Bud'ko, S.; Canfield, P.

    2006-01-01

    Magnetic field effect on the point-contact spectra of the Al- and C-substituted MgB 2 is presented. It is shown that suppression of the π-band contribution to the spectrum is different in the aluminium- and carbon-doped samples. The carbon substitution leads to a stronger enhancement of the π-band scattering while the Al-doping does not change the ratio between the π and σ scatterings

  1. The mechanism of Tc performance for Zn doped MgB2 sintered in magnetic field

    International Nuclear Information System (INIS)

    Li, W.X.; Li, Y.; Chen, R.H.; Zeng, R.; Dou, S.X.

    2010-01-01

    The mechanism of magnetic field sintering on the critical transition temperature, T c , for the Zn doped MgB 2 superconductor was investigated with the observation of Raman scattering measurement and the Raman spectra fit analysis. The broadened E 2g mode in Raman spectra shows the strengthening of the electron-phonon coupling (EPC) for the sample sintered in magnetic field. A synchronous fluctuation is observed between the Raman characters of the E 2g mode and the T c .

  2. Comparison between nano-diamond and carbon nanotube doping effects on critical current density and flux pinning in MgB2

    International Nuclear Information System (INIS)

    Cheng, C H; Yang, Y; Munroe, P; Zhao, Y

    2007-01-01

    Doping effects of nano-diamond and carbon nanotubes (CNTs) on critical current density of bulk MgB 2 have been studied. CNTs are found prone to be doped into the MgB 2 lattice whereas nano-diamond tends to form second-phase inclusions in the MgB 2 matrix, leading to a more significant improvement of J c (H) by doping by nano-diamond than by CNTs in MgB 2 . TEM reveals tightly packed MgB 2 nanograins (50-100 nm) with a dense distribution of diamond nanoparticles (10-20 nm) inside MgB 2 grains in nano-diamond-doped samples. Such a unique microstructure leads to a flux pinning behaviour different from that in CNTs-doped MgB 2

  3. World-record current in the MgB2 superconductor

    CERN Multimedia

    Antonella Del Rosso

    2014-01-01

    In the framework of the High-Luminosity LHC project, experts from the CERN Superconductors team recently obtained a world-record current of 20 kA at 24 K in an electrical transmission line consisting of two 20-metre long cables made of Magnesium Diboride (MgB2) superconductor. This result makes the use of such technology a viable solution for long-distance power transportation.   The 20-metre long electrical transmission line containing the two 20 kA MgB2 cables. “The test is an important step in the development of cold electrical power transmission systems based on the use of MgB2,” says Amalia Ballarino, head of the Superconductors and Superconducting Devices section in the Magnet, Superconductors and Cryostat group of the Technology Department, and initiator of this project. “The cables and associated technologies were designed, developed and tested at CERN. The superconducting wire is the result of a long R&D effort that started ...

  4. Peak effect and vortex dynamics in superconducting MgB2 single crystals

    International Nuclear Information System (INIS)

    Lee, Hyun-Sook; Jang, Dong-Jin; Kim, Heon-Jung; Kang, Byeongwon; Lee, Sung-Ik

    2007-01-01

    The dynamic nature of the vortex state of MgB 2 single crystals near the peak effect (PE) region, which is very different either from that of conventional low-temperature superconductors or from that of high-temperature cuprate superconductors, is introduced in this article. Relaxation from a disordered, metastable field-cooled (FC) state to an ordered, stable zero-field-cooled (ZFC) state of the MgB 2 single crystals under an applied magnetic field and current is investigated. From an analysis of the noise properties in the ZFC state, a dynamic vortex phase diagram of the MgB 2 is obtained near the PE region. Between the onset and the peak region in the critical current vs. magnetic field diagram, crossovers from a high-noise state to a noise-free state are observed with increasing current. Above the peak, however, an opposite phenomenon, crossovers from a noise-free to a high-noise state, is observed which has not been observed in any other superconductors. The hysteresis in the I-V curves and the two-level random telegraph noise in the time evolution of the voltage response under an constant applied current at the ZFC state are also studied in detail

  5. Influence of Ni and Cu contamination on the superconducting properties of MgB2 filaments

    International Nuclear Information System (INIS)

    Jung, A; Schlachter, S I; Runtsch, B; Ringsdorf, B; Fillinger, H; Orschulko, H; Drechsler, A; Goldacker, W

    2010-01-01

    Technical MgB 2 wires usually have a sheath composite consisting of different metals. For the inner sheath with direct contact to the superconducting filament, chemically inert Nb may be used as a reaction barrier and thermal stabilization is provided by a highly conductive metal like Cu. A mechanical reinforcement can be achieved by the addition of stainless steel. In order to illuminate the influence of defects in the reaction barrier, monofilament in situ wires with direct contact between the MgB 2 filament and frequently applied reactive sheath metals like Cu, Ni or Monel are studied. Reactions of Mg and B with a Cu-containing sheath lead to Cu-based by-products penetrating the whole filament. Reactions with Ni-containing sheaths lead to Ni-based by-products which tend to remain at the filament-sheath interface. Cu and/or Ni contamination of the filament lowers the MgB 2 -forming temperature due to the eutectic reaction between Mg, Ni and Cu. Thus, for the samples heat-treated at low temperatures J C and (partly) T C are increased compared to stainless-steel-sheathed wires. At high heat treatment temperatures uncontaminated filaments lead to the highest J C values. From the point of view of broken reaction barriers in real wires, the contamination of the filament with Cu and/or Ni does not necessarily constrain the superconductivity; it may even improve the properties of the wire, depending on the desired application.

  6. Flux pinning properties of impurity doped MgB2 bulks synthesized by diffusion method

    International Nuclear Information System (INIS)

    Ueda, Shinya; Shimoyama, Jun-ichi; Yamamoto, Akiyasu; Katsura, Yukari; Iwayama, Isao; Horii, Shigeru; Kishio, Kohji

    2005-01-01

    Doping effects of carbon-containing impurities on the critical current properties and microstructure were systematically studied for highly dense MgB 2 bulks prepared by the diffusion method starting from magnesium and boron which are separately packed in sealed stainless tubes. Obtained samples exhibited improved critical current density, J c , simply by an increase of effective current pass. A non-doped MgB 2 recorded almost double high J c at 20 K compared with those of the conventional porous MgB 2 bulks having ∼50% of the theoretical density, while irreversibility field, H irr , did not largely change. J c under high magnetic fields were enhanced by doping of carbon-containing impurities, such as SiC and B 4 C. Optimal doping levels of SiC and B 4 C for high critical current properties at 20 K are found to be ∼2% and 5%, respectively, as nominal carbon concentration at boron site. Difference in the optimal doping levels is originated from the difference in their reactivity

  7. A trapped field of >3 T in bulk MgB2 fabricated by uniaxial hot pressing

    International Nuclear Information System (INIS)

    Durrell, J H; Dennis, A; Shi, Y; Xu, Z; Campbell, A M; Babu, N Hari; Cardwell, D A; Dancer, C E J; Todd, R I; Grovenor, C R M

    2012-01-01

    A trapped field of over 3 T has been measured at 17.5 K in a magnetized stack of two disc-shaped bulk MgB 2 superconductors of diameter 25 mm and thickness 5.4 mm. The bulk MgB 2 samples were fabricated by uniaxial hot pressing, which is a readily scalable, industrial technique, to 91% of their maximum theoretical density. The macroscopic critical current density derived from the trapped field data using the Biot–Savart law is consistent with the measured local critical current density. From this we conclude that critical current density, and therefore trapped field performance, is limited by the flux pinning available in MgB 2 , rather than by lack of connectivity. This suggests strongly that both increasing sample size and enhancing pinning through doping will allow further increases in trapped field performance of bulk MgB 2 . (rapid communication)

  8. Improved flux pinning behaviour in bulk MgB2 achieved by nano-SiO2 addition

    International Nuclear Information System (INIS)

    Rui, X F; Zhao, Y; Xu, Y Y; Zhang, L; Sun, X F; Wang, Y Z; Zhang, H

    2004-01-01

    Bulk MgB 2 with SiO 2 nanoparticles added has been synthesized using a simple solid-state reaction route. The lattice constant in the c direction increases with additive content due to a small amount of Si being doped into the lattice of the MgB 2 ; however, T c is almost fixed at 37.2 K. The addition of SiO 2 nanoparticles also improves the J c -H and H irr -T characteristics of MgB 2 when the additive content is lower than 7%. At 20 K and 1 T, J c for the sample with 7% additive content reaches 2.5 x 10 5 A cm -2 . Microstructural analysis reveals that a high density of MgSi 2 nanoparticles (10-50 nm) exists inside the MgB 2 grains, leading to the formation of a nanocomposite superconductor

  9. Microstructural and crystallographic imperfections of MgB2 superconducting wire and their correlation with the critical current density

    Science.gov (United States)

    Shahabuddin, Mohammed; Alzayed, Nasser S.; Oh, Sangjun; Choi, Seyong; Maeda, Minoru; Hata, Satoshi; Shimada, Yusuke; Hossain, Md Shahriar Al; Kim, Jung Ho

    2014-01-01

    A comprehensive study of the effects of structural imperfections in MgB2 superconducting wire has been conducted. As the sintering temperature becomes lower, the structural imperfections of the MgB2 material are increased, as reflected by detailed X-ray refinement and the normal state resistivity. The crystalline imperfections, caused by lattice disorder, directly affect the impurity scattering between the π and σ bands of MgB2, resulting in a larger upper critical field. In addition, low sintering temperature keeps the grain size small, which leads to a strong enhancement of pinning, and thereby, enhanced critical current density. Owing to both the impurity scattering and the grain boundary pinning, the critical current density, irreversibility field, and upper critical field are enhanced. Residual voids or porosities obviously remain in the MgB2, however, even at low sintering temperature, and thus block current transport paths.

  10. The effect of citric and oxalic acid doping on the superconducting properties of MgB2

    International Nuclear Information System (INIS)

    Ojha, N; Singla, Rashmi; Varma, G D; Malik, V K; Bernhard, C

    2009-01-01

    In this paper we report the effect of carbon doping on the structural and superconducting properties of MgB 2 using citric and oxalic acids as carbon sources. The bulk polycrystalline samples have been synthesized via a standard solid state reaction route with composition MgB 2 +x wt% of citric and oxalic acids (x = 0, 5 and 10). The x-ray diffraction results reveal the formation of dominantly MgB 2 with only a small amount of impurity phase MgO and substitution of C at the B site of MgB 2 for both dopants. Improvements in the upper critical field (H C2 ), irreversibility field (H irr ) and high field (>2.5 T) critical current density (J C ) have been observed on C doping in the samples. The correlations between superconducting properties and structural characteristics of the samples are described and discussed in this paper.

  11. Fabrication and radio frequency test of large-area MgB2 films on niobium substrates

    Science.gov (United States)

    Ni, Zhimao; Guo, Xin; Welander, Paul B.; Yang, Can; Franzi, Matthew; Tantawi, Sami; Feng, Qingrong; Liu, Kexin

    2017-04-01

    Magnesium diboride (MgB2) is a promising candidate material for superconducting radio frequency (RF) cavities because of its higher transition temperature and critical field compared with niobium. To meet the demand of RF test devices, the fabrication of large-area MgB2 films on metal substrates is needed. In this work, high quality MgB2 films with 50 mm diameter were fabricated on niobium by using an improved HPCVD system at Peking University, and RF tests were carried out at SLAC National Accelerator Laboratory. The transition temperature is approximately 39.6 K and the RF surface resistance is about 120 μΩ at 4 K and 11.4 GHz. The fabrication processes, surface morphology, DC superconducting properties and RF tests of these large-area MgB2 films are presented.

  12. Theoretical investigation of the vortex state in new superconductors: MgB2 and PrOs4Sb12

    International Nuclear Information System (INIS)

    Dao, V.H.

    2006-01-01

    As illustrated by the present thesis work, gap function anisotropy and crystal anisotropy are combined when influencing superconducting properties under a magnetic field. In order to study the mixed state of the recently discovered multiband superconductor MgB 2 , we first derive the Ginzburg-Landau functional for a two-gap superconductor from a weak coupling BCS model. The interaction between the two condensates is then described by a unique Josephson-type coupling. The two-gap theory then enables to explain the curvature and the anisotropy of the upper critical field, as well as the 30 degrees change of orientation for the vortex lattice which is observed when increasing the strength of the magnetic field applied along the c-tilde axis. Besides, we investigate the vortex lattice geometry in the superconducting heavy fermion PrOs 4 Sb 12 . When taking into account non local corrections for an s-wave T h -tetrahedral superconductor, we can explain the observed deformation of the lattice by the crystal symmetry of the compound. Ab initio results of the band structures confirm quantitatively our analysis. (author)

  13. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  14. Numerical investigations on the characteristics of thermomagnetic instability in MgB2 bulks

    Science.gov (United States)

    Xia, Jing; Li, Maosheng; Zhou, Youhe

    2017-07-01

    This paper presents the characteristics of thermomagnetic instability in MgB2 bulks by numerically solving the macroscopic dynamics of thermomagnetic interaction governed by the coupled magnetic and heat diffusion equations in association with a modified E-J power-law relationship. The finite element method is used to discretize the system of partial differential equations. The calculated magnetization loops with flux jumps are consistent with the experimental results for MgB2 slabs bathed in a wide range of ambient temperatures. We reveal the evolution process of the thermomagnetic instability and present the distributions of the magnetic field, temperature, and current density before and after flux jumps. A 2D axisymmetric model is used to study the thermomagnetic instability in cylindrical MgB2 bulks. It is found that the number of flux jumps monotonously reduces as the ambient temperature rises and no flux jump appears when the ambient temperature exceeds a certain value. Moreover, the flux-jump phenomenon exists in a wide range of the ramp rate of the applied external field, i.e. 10-2-102 T s-1. Furthermore, the dependences of the first flux-jump field on the ambient temperature, ramp rate, and bulk thickness are investigated. The critical bulk thicknesses for stability are obtained for different ambient temperatures and sample radii. In addition, the influence of the capability of the interfacial heat transfer on the temporal response of the bulk temperature is discussed. We also find that the prediction of thermomagnetic instability is sensitive to the employment of the flux creep exponent in the simulations.

  15. Stress-strain effects on powder-in-tube MgB2 tapes and wires

    International Nuclear Information System (INIS)

    Katagiri, Kazumune; Takaya, Ryuya; Kasaba, Koichi; Tachikawa, Kyoji; Yamada, Yutaka; Shimura, Satoshi; Koshizuka, Naoki; Watanabe, Kazuo

    2005-01-01

    The effects of stress-strain on the critical current, I c , of ex situ powder-in-tube (PIT)-processed Ni-sheathed MgB 2 tapes and round wires as well as in situ PIT-processed Cu-sheathed wires at 4.2 K in a magnetic field up to 5 T have been studied. The effect of In powder addition on the Ni-sheathed MgB 2 wire was not so clear compared with that in the tape, in which the irreversible strain, ε irr , for the I c degradation onset increases significantly by the addition. This is attributed to the difference in the microstructure of the core associated with cold workings. A peak and gradual degradation behaviour of I c with strain beyond ε irr was found in the wire, whereas no evident peak and a steep degradation behaviour was found in the tape. As a possible reason, the difference in the triaxial residual stress state at 4.2 K due to the difference in geometry of the cross-section is suspected. The transverse compression tests revealed that I c of the wire did not degrade up to 270 MPa. Again, the effect of In addition was minimal. The Young's modulus of MgB 2 , 31-41 GPa, at room temperature was estimated by a tensile test of Cu sheath wire using a high-accuracy extensometer and the law of mixtures. The tensile strain dependence of I c in the Cu sheath wire was similar to that in the Ni-sheathed wire, ε irr being 0.4%. However, the stress corresponding to ε irr , 50 MPa, was about 1/10 of that for the Ni-sheath wire and the irreversible transverse compressive stress, 150 MPa, was also lower. The effect of bending strain on the I c in Cu-sheathed wire was compared with that of the tensile strain

  16. Contribution to the development of dry R and W MgB2 superconducting magnets

    International Nuclear Information System (INIS)

    Pasquet, Raphael

    2015-01-01

    Currently, the majority of superconducting magnets, including MRI, are cooled by a bath of liquid helium at atmospheric pressure. Nevertheless, this type of cooling is expensive and imposes significant security constraints for large volumes. For these reasons, the cooling of superconducting magnets is desirable without liquid helium. Cryo-cooler provides dry cooling to 4 K without any liquid helium. However, the power available is low and dry cooling is difficult. In these conditions, it is complicate to use NbTi with dry cooling. But if we increase the operating temperature to 10 K, the power of cryo-cooler increases by a factor of ten. Nevertheless in this case, it is necessary to use of a high critical temperature superconductor. We choose to use MgB 2 R and W conductors because it is relatively low cost but it has the handicap to be sensible at mechanical stress. It is therefore necessary to be careful during their winding to not degrade their superconducting performance. As part of this thesis, we have developed a dry test facility to measure the critical current of MgB 2 R and W conductors as well as mock-ups. To do this, a new type of thermal contact based on aluminum nitride has been developed. In addition to this development, we designed two MgB 2 R and W magnet mock-ups: a solenoid and a double pancake. The double pancake was manufactured (with a new patented winding method) and it has been successfully tested. (author) [fr

  17. Vibrational spectroscopy of superconducting MgB2 by neutron inelastic scattering

    International Nuclear Information System (INIS)

    Muranaka, Takahiro

    2001-01-01

    Neutron inelastic scattering measurements have been performed on superconducting MgB 2 above and below T c . The temperature dependence of the generalized phonon density-of-states showed clear anomalous behaviour near 24 meV in the acoustic phonon region, which may be interpreted as evidence of a substantial contribution to the total electron-phonon coupling strength deriving from these phonons. Weaker evidence for a corresponding response in the high-energy B bond stretching phonons was also encountered. (author)

  18. Correlated vortex pinning in Si-nanoparticle doped MgB2

    OpenAIRE

    Kusevic, I.; Babic, E.; Husnjak, O.; Soltanian, S.; Wang, X. L.; Dou, S. X.

    2003-01-01

    The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB$_{2}$ tapes have been measured at temperatures $T\\geq 28$ K in magnetic fields $B\\leq 0.9$ T. The irreversibility line $B_{irr}(T)$ for doped tape shows a stepwise variation with a kink around 0.3 T. Such $B_{irr}(T)$ variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field $% B_{\\phi}$) and is very different ...

  19. Enhanced superconducting properties of MgB2 by carbon substitution using carbon containing nano additives

    International Nuclear Information System (INIS)

    Devadas, K.M.; Varghese, Neson; Vinod, K.; Rahul, S.; Thomas, Syju; Anooja, J.B.; Syamaprasad, U.; Sundaresan, A.; Roy, S.B.

    2010-01-01

    A comparative study on the effect of doping of nano carbon, nano diamond and nano SiC in MgB 2 is carried out. The J c (H) is significantly enhanced for all doped samples compared to the pure sample among which MgB 1.9 C 0.1 (nano C) exhibits the best J c (H) performance. The enhanced performance is due to the effective substitution of C at B site which is confirmed by the systematic decrease in both α axis and T c . (author)

  20. Plasma Synthesized Doped Boron Nanopowder for MgB2 Superconductors

    International Nuclear Information System (INIS)

    Marzik, James V.

    2012-01-01

    Under this program, a process to synthesize nano-sized doped boron powder by a plasma synthesis process was developed and scaled up from 20 gram batches at program start to over 200 grams by program end. Over 75 batches of boron nanopowder were made by RF plasma synthesis. Particle sizes were typically in the 20-200 nm range. The powder was synthesized by the reductive pyrolysis of BCl 3 in hydrogen in an RF plasma. A wide range of process parameters were investigated including plasma power, torch geometry, gas flow rates, and process pressure. The powder-in-tube technique was used to make monofilament and multifilament superconducting wires. MgB 2 wire made with Specialty Materials plasma synthesized boron nanopowder exhibited superconducting properties that significantly exceeded the program goals. Superconducting critical currents, J c , in excess of 10 5 A cm -2 at magnetic fields of 8 tesla were reproducibly achieved. The upper critical magnetic field in wires fabricated with program boron powder were H c2 (0) = 37 tesla, demonstrating the potential of these materials for high field magnet applications. T c in carbon-doped MgB 2 powder showed a systematic decrease with increasing carbon precursor gas flows, indicating the plasma synthesis process can give precise control over dopant concentrations. Synthesis rates increased by a factor of 400% over the course of the program, demonstrating the scalability of the powder synthesis process. The plasma synthesis equipment at Specialty Materials has successfully and reproducibly made high quality boron nanopowder for MgB 2 superconductors. Research and development from this program enabled Specialty Materials to successfully scale up the powder synthesis process by a factor of ten and to double the size of its powder pilot plant. Thus far the program has been a technical success. It is anticipated that continued systematic development of plasma processing parameters, dopant chemistry and concentration, wire processing technology, and collection technology will lead to the commercialization of boron nanopowder as a precursor for MgB 2 superconductors. Potential commercial applications include magnets for magnetic resonance imaging (MRI), fault current limiters, wind turbine generators.

  1. Multifilamentary MgB2 wires fracture behavior during the drawing process

    International Nuclear Information System (INIS)

    Shan, D.; Yan, G.; Zhou, L.; Li, J.S.; Li, C.S.; Wang, Q.Y.; Xiong, X.M.; Jiao, G.F.

    2012-01-01

    The fracture behavior of 6 + 1 filamentary MgB 2 superconductive wires is presented here. The composite wires were fabricated by in situ Powder-in-Tube method using Nb as a barrier and copper as a stabilizer. The microstructure of the material has a great influence on its fracture behavior. The microstructural aspects of crack nucleation and propagation are discussed. It shows that there are complicated correlations between fracture behavior and the main influencing parameters, which contain specific drawing conditions (drawing velocity, reduction in area per pass), materials properties (strength, yield stress, microstructure) as well as the extent of bonding between the metal sheaths at their interface.

  2. Temperature dependence of the optical conductivity and penetration depth in superconductor MgB2 film

    International Nuclear Information System (INIS)

    Moarrefi, M.; Yavari, H.; Elahi, M.

    2010-01-01

    By using Green's function method the temperature dependence of the optical conductivity and penetration depth of high-quality MgB 2 film are calculated in the framework of the two-band model. We compare our results with experimental data and we argue that the single gap model is insufficient to describe the optical and penetration depth behavior, but the two-band model with different symmetries describes the data rather well. In the two gap model we consider that the both components of optical conductivity are a weighted sum of the contribution from σ and π bonds and hybridization between them is negligible.

  3. Design of MgB2 superconducting dipole magnet for particle beam transport in accelerators

    International Nuclear Information System (INIS)

    Abrahamsen, A.B.; Givel, J.C.; Andersen, N.H.; Zangenberg, N.; Baurichter, A.

    2006-11-01

    A comprehensive analysis of the innovation potential of superconductivity at Risoe was performed in February 2004 by the main author of this report. Several suggestions for new products and new markets were formulated by the superconductivity group and examined by the innovation staff at Risoe. The existing markets of superconducting technology is within highly specialized scientific areas such as magnetic confinement in fusion energy, sample environment in neutron scattering and large scale accelerators such as the Large Hadron Collider(LHC) at Cern, or in the nuclear magnetic resonance (NMR) community using MR-imaging scanners in medicine and phase identification in organic chemistry. Only the NMR applications can be categorized as a highly profitable and commercial market today. The superconductivity group of Risoe formulated and presented the gearless superconducting wind turbine multipole generator as the most promising new concept, but further initiatives were stopped due to unclear patent possibilities. The experience of the innovation review was used in the STVF framework program 'New superconductors: mechanisms, processes and products' to identify potential new product for the collaborating company Danfysik A/S, which has a strong tradition in building resistive magnets for particle accelerators. A technology transfer project was formulated at the end of 2005 with the purpose to collect the knowledge about the MgB2 superconductor gained in the STVF program and in the European Framework Program 6 project HIPERMAG. It was presented at the Risoe innovation seminar January 2006, and recently a collaboration between Risoe and Danfysik A/S was initialized. The present report aims to outline a potential superconducting product within the STVF program. The use of the MgB 2 superconductors in a dipole magnet for guiding particle beams in a small scale accelerator is examined with the purpose to build lighter and smaller than the present resistive magnets. Here the critical current density of primarily MgB 2 will be compared with current density determined by specifications similar to the Tevatron accelerator, B = 4:4 Tesla and coil aperture D = 76 mm, which has been identified by Danfysik A/S as interesting. It is concluded that MgB 2 is useful for the dipole application and construction of a small test coil of one half of the magnet is planned in 2007. (au)

  4. Characterisation of nano-grains in MgB2 superconductors by transmission Kikuchi diffraction

    International Nuclear Information System (INIS)

    Wong, D.C.K.; Yeoh, W.K.; Trimby, P.W.; De Silva, K.S.B.; Bao, P.; Li, W.X.; Xu, X.; Dou, S.X.; Ringer, S.P.; Zheng, R.K.

    2015-01-01

    We report the first application of the emerging transmission Kikuchi diffraction technique in the scanning electron microscope to investigate nano-grain structures in polycrystalline MgB 2 superconductors. Two sintering conditions were considered, and the resulting differences in superconducting properties are correlated to differences in grain structure. A brief comparison to X-ray diffraction results is presented and discussed. This work focusses more on the application of this technique to reveal grain structure, rather than on the detailed differences between the two sintering temperatures

  5. Raman study of electronic excitations in MgB2 with application of high magnetic field

    International Nuclear Information System (INIS)

    Machtoub, L.; Takano, Y.; Kito, H.

    2006-01-01

    We present the first results of Raman scattering with application of magnetic field on magnesium diboride (MgB 2 ). In this work, we have investigated the magnetic field dependence of the 72 meV (E 2g mode) and the pair-breaking peak around 100 cm -1 which corresponds to σ-band gap. Intensity enhancement of Raman features around 800 cm -1 accompanied with broadening in the line shape of E 2g mode has been observed in some polycrystalline samples at 0 GPa. Results are compared with previous Raman study under hydrostatic pressure

  6. Using Fast Hot Shock Wave Consolidation Technology to Produce Superconducting MgB2

    Directory of Open Access Journals (Sweden)

    T. Gegechkori

    2018-02-01

    Full Text Available The original hot shock wave assisted consolidation method combining high temperature was applied with the two-stage explosive process without any further sintering to produce superconducting materials with high density and integrity. The consolidation of MgB2 billets was performed at temperatures above the Mg melting point and up to 1000oC in partially liquid condition of Mg-2B blend powders. The influence of the type of boron (B isotope in the composition on critical temperature and superconductive properties was evaluated. An example of a hybrid Cu-MgB2–Cu superconducting tube is demonstrated and conclusions are discussed.

  7. Sputtered highly oriented PZT thin films for MEMS applications

    Science.gov (United States)

    Kalpat, Sriram S.

    Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

  8. Characterization of Mechanical Properties of MgB$_2$ Conductor for the Superconducting Link Project at CERN

    CERN Document Server

    Sugano, M; Bartova, B; Bjoerstad, R; Scheuerlein, C; Grasso, G

    2015-01-01

    In the framework of high luminosity upgrade of Large Hadron Collider at CERN, superconducting links are being developed. MgB2 wire is a candidate conductor for use in high-current cables. Mechanical properties of this material are of key importance for the definition of the cable design and operating conditions. In this study, we evaluated the Young's modulus of MgB2 filaments extracted from ex situ processed composite wires. The wires were produced in unit lengths of about 1 km and used in high-current cables. Single fiber tensile test was carried out on filaments composed of MgB2, Nb barrier, and Nb-Ni reaction layer. From the unloading modulus of filament specimens measured with different gauge lengths, the Young's modulus of composite filaments extracted from two different strands was determined to be 114 and 122 GPa at room temperature, respectively. By using the rule-of-mixture, the Young's modulus of MgB2 was estimated to be lower than that reported for highly dense MgB2 bulks. The reason for such diff...

  9. S-I-N tunneling spectroscopy of MgB2 superconductor: evidence of two superconducting energy gaps

    International Nuclear Information System (INIS)

    Sen, Shashwati; Aswal, D.K.; Singh, Ajay; Gadkari, S.C.; Shah, K.; Gupta, S.K.; Sahni, V.C.

    2002-01-01

    The tunneling spectra of polycrystalline MgB 2 , have been recorded, at different temperatures between 29 K and T c , using planar superconductor- insulating-normal (S-I-N) tunneling spectroscopy. The planar S-I-N tunnel junctions have been fabricated by thermally evaporating Ag electrodes on MgB 2 surface. The naive layer, which forms at the surface of MgB 2 , due to atmospheric degradation, was employed as an insulating layer between Ag electrodes and MgB 2 . We have found presence of two clear superconducting energy gaps in MgB 2 . The magnitudes of these gaps at 29.5 K are 1.8 and 5.9 MeV, respectively. In the vicinity of T c , while larger energy gap obeyed BCS temperature dependence, the smaller energy gap deviated from BCS dependence. All the spectra exhibited zero-bias conductance, which decreased linearly with temperature and vanished at T c . (author)

  10. Magnetic microscopy for characterization of local critical current in iron-sheathed MgB2 wires

    International Nuclear Information System (INIS)

    Higashikawa, K.; Yamamoto, A.; Kiss, T.; Ye, S.; Matsumoto, A.; Kumakura, H.

    2014-01-01

    Highlights: • We developed a characterization method of local critical current in MgB 2 wires. • Local homogeneity was visualized by the scanning Hall-probe microscopy (SHPM). • Local critical current value was quantified with the aid of the finite element method (FEM). • MgB 2 wire still has inhomogeneous distribution in local critical current. • Higher potential than that estimated by the four-probe transport method was suggested. - Abstract: We have developed a characterization method of local critical current in iron-sheathed MgB 2 wires. Local homogeneity was visualized by the scanning Hall-probe microscopy (SHPM). The value of local critical current was quantified with the aid of the finite element method (FEM) considering the ferromagnetic properties of the iron sheath. The results suggested that MgB 2 wires fabricated by internal Mg diffusion processes still have large longitudinal inhomogeneity and much higher potential than that estimated by the four-probe transport method. This will be very important information for making a correct strategy for further development of MgB 2 wires

  11. Flux pinning and inhomogeneity in magnetic nanoparticle doped MgB2/Fe wires

    Science.gov (United States)

    Novosel, Nikolina; Pajić, Damir; Mustapić, Mislav; Babić, Emil; Shcherbakov, Andrey; Horvat, Joseph; Skoko, Željko; Zadro, Krešo

    2010-06-01

    The effects of magnetic nanoparticle doping on superconductivity of MgB2/Fe wires have been investigated. Fe2B and SiO2-coated Fe2B particles with average diameters 80 and 150 nm, respectively, were used as dopands. MgB2 wires with different nanoparticle contents (0, 3, 7.5, 12 wt.%) were sintered at temperature 750°C. The magnetoresistivity and critical current density Jc of wires were measured in the temperature range 2-40 K in magnetic field B doped wires decreases quite rapidly with doping level (~ 0.5 K per wt.%). This results in the reduction of the irreversibility fields Birr(T) and critical current densities Jc(B,T) in doped samples (both at low (5 K) and high temperatures (20 K)). Common scaling of Jc(B,T) curves for doped and undoped wires indicates that the main mechanism of flux pinning is the same in both types of samples. Rather curved Kramer's plots for Jc of doped wires imply considerable inhomogeneity.

  12. Effect of malic acid doping on the structural and superconducting properties of MgB2

    International Nuclear Information System (INIS)

    Ojha, N.; Sudesh; Stuti Rani; Varma, G.D.

    2010-01-01

    The samples have been prepared via standard solid state reaction route with nominal compositions MgB 2 + x wt% malic acid (x = 0, 5 and 10) by sintering at two different temperatures: 800 and 850 deg C in argon atmosphere. Improvement in upper critical fields (H c2 ) and irreversibility field (H irr ) of doped samples as compared to undoped samples have been observed. At 10 K, critical current densities (J c ) of the 5 and 10 wt% malic acid doped MgB 2 samples sintered at 850 deg C have higher values as compared to undoped sample sintered at the same temperature in the fields greater than 3 T. However, J c values of 5 wt% malic acid doped sample are higher than 10 wt% doped sample in the entire applied field region (0 - 7 T). In case of the samples sintered at 800 deg C improvement in J c values of 5 wt% doped sample have been found in entire field region as compared to undoped sample. On the other hand we see deterioration in J c values of 10 wt% doped samples sintered at 800 deg C as compared to undoped samples sintered at same temperature. The correlations between structural and superconducting properties will be described and discussed in this paper. (author)

  13. MgB2 for Application to RF Cavities for Accelerators

    International Nuclear Information System (INIS)

    Tajima, T.; Canabal, A.; Zhao, Y.; Romanenko, A.; Moeckly, B.H.; Nantista, C.D.; Tantawi, S.; Phillips, L.; Iwashita, Y.; Campisi, I.E.

    2007-01-01

    Magnesium diboride (MgB 2 ) has a transition temperature (T c ) of ∼40 K, i.e., about 4 times as high as that of niobium (Nb).We have been evaluating MgB 2 as a candidate material for radio-frequency (RF) cavities for future particle accelerators. Studies in the last 3 years have shown that it could have about one order of magnitude less RF surface resistance (Rs) than Nb at 4 K. A power dependence test using a 6 GHz TE011 mode cavity has shown little power dependence up to ∼12 mT (120 Oe), limited by available power, compared to other high-Tc materials such as YBCO. A recent study showed, however, that the power dependence of Rs is dependent on the coating method. A film made with on-axis pulsed laser deposition (PLD) has showed rapid increase in Rs compared to the film deposited by reactive evaporation method. This paper shows these results as well as future plans

  14. Mechanically activated self-propagated high-temperature synthesis of nanometer-structured MgB2

    International Nuclear Information System (INIS)

    Radev, D.D.; Marinov, M.; Tumbalev, V.; Radev, I.; Konstantinov, L.

    2005-01-01

    Nanometer-sized MgB 2 was prepared via a two-step modification of the mechanically activated self-propagated high-temperature synthesis. The experimental conditions and some structural and phase characteristics of the synthesized product are reported. It is shown that a single-phase material can be prepared after 2 h of intense mechanical treatment of the starting magnesium and boron powders and a synthesis induced at a current-pulse density of 30 A cm -2 . The average size of MgB 2 particles synthesized in this way is 70-80 nm. It is also shown that using the same reagents and the 'classic' high-temperature interaction at 850 deg C with a protective atmosphere of pure Ar, mean particle size of the MgB 2 obtained is 50 μm

  15. Effects of TiC doping on the upper critical field of MgB2 superconductors

    International Nuclear Information System (INIS)

    Yan, S.C.; Zhou, L.; Yan, G.; Lu, Y.F.

    2008-01-01

    TiC doped MgB 2 bulks were fabricated by two-step reaction method. The sample with a nominal compositions of Mg(B 0.95 (TiC) 0.05 ) 4 was first sintered at 1000 deg. C for 0.5 h. An appropriate amount of Mg was added to reach the stoichiometry of Mg(B 0.95 (TiC) 0.05 ) 2 , which was sintered at 750 deg. C for 2 h. The H c2 for the micro-TiC doped MgB 2 reached 12 T at 20 K. And J c is 5.3 x 10 4 A/cm 2 at 20 K and 1 T. The results indicate that the two-step reaction method could effectively introduce the carbon in TiC into the MgB 2 crystalline lattice, and therefore improve the upper critical field

  16. NMR relaxation rates and Knight shifts in MgB2 and AlB2: theory versus experiments

    International Nuclear Information System (INIS)

    Pavarini, E; Baek, S H; Suh, B J; Borsa, F; Bud'ko, S L; Canfield, P C

    2003-01-01

    We have performed 11 B NMR measurements in 11 B enriched MgB 2 powder sample in the normal phase. The Knight shift was accurately determined by using the magic angle spinning technique. Results for 11 B and 27 Al Knight shifts (K) and relaxation rates (1/T 1 ) are also reported for AlB 2 . The data show a dramatic decrease of both K and 1/T 1 for 11 B in AlB 2 with respect to MgB 2 . We compare experimental results with ab initio calculated NMR relaxation rates and Knight shifts. The experimental values for 1/T 1 and K are in most cases in good agreement with the theoretical results. We show that the decrease of K and 1/T 1 for 11 B is consistent with a drastic drop of the density of states at the boron site in AlB 2 with respect to MgB 2

  17. Electro-mechanical characterization of MgB2 wires for the Superconducting Link Project at CERN

    Science.gov (United States)

    Konstantopoulou, K.; Ballarino, A.; Gharib, A.; Stimac, A.; Garcia Gonzalez, M.; Perez Fontenla, A. T.; Sugano, M.

    2016-08-01

    In previous years, the R & D program between CERN and Columbus Superconductors SpA led to the development of several configurations of MgB2 wires. The aim was to achieve excellent superconducting properties in high-current MgB2 cables for the HL-LHC upgrade. In addition to good electrical performance, the superconductor shall have good mechanical strength in view of the stresses during operation (Lorenz forces and thermal contraction) and handling (tension and bending) during cabling and installation at room temperature. Thus, the study of the mechanical properties of MgB2 wires is crucial for the cable design and its functional use. In the present work we report on the electro-mechanical characterization of ex situ processed composite MgB2 wires. Tensile tests (critical current versus strain) were carried out at 4.2 K and in a 3 T external field by means of a purpose-built bespoke device to determine the irreversible strain limit of the wire. The minimum bending radius of the wire was calculated taking into account the dependence of the critical current with the strain and it was then used to obtain the minimum twist pitch of MgB2 wires in the cable. Strands extracted from cables having different configurations were tested to quantify the critical current degradation. The Young’s modulus of the composite wire was measured at room temperature. Finally, all measured mechanical parameters will be used to optimize an 18-strand MgB2 cable configuration.

  18. Microscopic unravelling of nano-carbon doping in MgB2 superconductors fabricated by diffusion method

    International Nuclear Information System (INIS)

    Wong, D.C.K.; Yeoh, W.K.; De Silva, K.S.B.; Kondyurin, A.; Bao, P.; Li, W.X.; Xu, X.; Peleckis, G.; Dou, S.X.; Ringer, S.P.; Zheng, R.K.

    2015-01-01

    Highlights: • First report on nano-carbon doped MgB 2 superconductors synthesized by diffusion method. • Microstructure and superconducting properties of the superconductors are discussed. • B 4 C region blocks the Mg from reacting with B in the 10% nano-carbon doped sample. • MgB 2 with 2.5% nano-carbon doped showed the highest J c , ≈10 4 A/cm 2 for 20 K at 4 T. - Abstract: We investigated the effects of nano-carbon doping as the intrinsic (B-site nano-carbon substitution) and extrinsic (nano-carbon derivatives) pinning by diffusion method. The contraction of the in-plane lattice confirmed the presence of disorder in boron sublattice caused by carbon substitution. The increasing value in full width half maximum (FWHM) in the X-ray diffraction (XRD) patterns with each increment in the doping level reveal smaller grains and imperfect MgB 2 crystalline. The strain increased across the doping level due to the carbon substitution in the MgB 2 matrix. The broadening of the T c curves from low to high doping showed suppression of the connectivity of the bulk samples with progressive dirtying. At high doping, the presence of B 4 C region blocked the Mg from reacting with crystalline B thus hampering the formation of MgB 2 . Furthermore, the unreacted Mg acted as a current blocking phase in lowering down the grain connectivity hence depressing the J c of the 10% nano-carbon doped MgB 2 bulk superconductor

  19. Effects of Bi-2212 addition on the levitation force properties of bulk MgB2 superconductors

    International Nuclear Information System (INIS)

    Taylan Koparan, E.; Savaskan, B.; Guner, S.B.; Celik, S.

    2016-01-01

    We present a detailed investigation of the effects of Bi 2 Sr 2 Ca 1 Cu 2 O 8+κ (Bi-2212) adding on the levitation force and magnetic properties of bulk MgB 2 obtained by hot press method. The amount of Bi-2212 was varied between 0 and 10 wt% (0, 2, 4, 6, 10 wt%) of the total MgB 2 . Moreover, we present MgB 2 bulk samples fabricated by using different production methods including hot pressing method to our knowledge. All samples were prepared by using elemental magnesium (Mg) powder, amorphous nano-boron (B) powder and Bi-2212 powder which are produced by hot press method. As a result of hot press process, compact pellet samples were manufactured. The vertical and lateral levitation force measurements were executed at the temperatures of 20, 24 and 28 K under zero-field-cooled (ZFC) and field-cooled (FC) regimes for samples with various adding levels. At 24 K and 28 K under ZFC regime, the 2 wt% Bi-2212 added sample exhibits a higher vertical levitation force than the pure sample. Bi-2212 added MgB 2 samples compared to the pure sample have lower attractive force values in FC regime. The magnetic field dependence of the critical current density J c was calculated from the M-H loops for Bi-2212 added MgB 2 samples. The 2 wt% Bi-2212 added sample has the best levitation and critical current density performance compared to other samples. The critical temperature (T c ) has slightly dropped from 37.8 K for the pure MgB 2 sample to 36.7 K for the 10 wt% of Bi-2212 added sample. The transition temperature slightly decreases when Bi-2212 adding level is increased. (orig.)

  20. Sugar as an optimal carbon source for the enhanced performance of MgB2 superconductors at high magnetic fields

    Science.gov (United States)

    Shcherbakova, O. V.; Pan, A. V.; Wang, J. L.; Shcherbakov, A. V.; Dou, S. X.; Wexler, D.; Babić, E.; Jerčinović, M.; Husnjak, O.

    2008-01-01

    In this paper we report the results of an extended study of the effect of sugar doping on the structural and electromagnetic properties of MgB2 superconductors. High values of the upper critical field (Bc2) of 36 T and the irreversibility field (Birr) of 27 T have been estimated at the temperature of 5 K in a bulk MgB2 sample with the addition of 10 wt% of sugar. The critical current density (Jc(Ba)) of sugar-doped samples has been significantly improved in the high field region. The value of transport Jc has reached as high as 108 A m-2 at 10 T and 5 K for Fe-sheathed sugar-doped MgB2 wire. The analysis of the pinning mechanism in the samples investigated indicated that dominant vortex pinning occurs on the surface type of pinning defects, such as grain boundaries, dislocations, stacking faults etc, for both pure and doped MgB2. In sugar-doped samples, pinning is governed by numerous crystal lattice defects, which appear in MgB2 grains as a result of crystal lattice distortion caused by carbon substitution for boron and nano-inclusions. The drastically improved superconducting properties of sugar-doped samples are also attributed to the highly homogeneous distribution and enhanced reactivity of this dopant with host Mg and B powders. The results of this work suggest that sugar is the optimal source of carbon for doping MgB2 superconductor, especially for application at high magnetic fields.

  1. Physical properties in flux line lattice state in MgB2 probed by μSR

    International Nuclear Information System (INIS)

    Ohishi, Kazuki; Muranaka, Takahiro; Akimitsu, Jun; Koda, Akihiro; Higemoto, Wataru; Kadono, Ryosuke

    2002-01-01

    We have performed muon spin rotation (μSR) measurements to deduce the magnetic penetration depth λ in the flux line lattice state of MgB 2 microscopically. It is observed that λ shows a quadratic temperature dependence which is predicted for the case of superconducting gap with line nodes. Furthermore, it clearly exhibits a strong field dependence, where λ increases almost linearly with H. These results strongly suggest that the superconducting order parameter in MgB 2 is highly anisotropic. (author)

  2. Design, manufacturing and tests of first cryogen-free MgB2 prototype coils for offshore wind generators

    International Nuclear Information System (INIS)

    Sarmiento, G; Sanz, S; Pujana, A; Merino, J M; Apiñaniz, S; Marino, I; Iturbe, R; Nardelli, D

    2014-01-01

    Although renewable sector has started to take advantage of the offshore wind energy recently, the development is very intense. Turbines reliability, size, and cost are key aspects for the wind industry, especially in marine locations. A superconducting generator will allow a significant reduction in terms of weight and size, but cost and reliability are two aspects to deal with. MgB 2 wire is presented as one promising option to be used in superconducting coils for wind generators. This work shows the experimental results in first cryogen-free MgB 2 prototype coils, designed according to specific requirements of TECNALIA's wind generator concept.

  3. Structural and critical current properties in Al-doped MgB2

    International Nuclear Information System (INIS)

    Zheng, D.N.; Xiang, J.Y.; Lang, P.L.; Li, J.Q.; Che, G.C.; Zhao, Z.W.; Wen, H.H.; Tian, H.Y.; Ni, Y.M.; Zhao, Z.X.

    2004-01-01

    A series of Al-doped Mg 1-x Al x B 2 samples have been fabricated and systematic study on structure and superconducting properties have been carried out for the samples. In addition to a structural transition observed by XRD, TEM micrographs showed the existence of a superstructure of double c-axis lattice constant along the direction perpendicular to the boron honeycomb sheet. In order to investigate the effect of Al doping on flux pinning and critical current properties in MgB 2 , measurements on the superconducting transition temperature T c , irreversible field B irr and critical current density J c were performed too, for the samples with the doping levels lower than 0.15 in particular. These experimental observations were discussed in terms of Al doping induced changes in carrier concentration

  4. Structural and critical current properties in Al-doped MgB 2

    Science.gov (United States)

    Zheng, D. N.; Xiang, J. Y.; Lang, P. L.; Li, J. Q.; Che, G. C.; Zhao, Z. W.; Wen, H. H.; Tian, H. Y.; Ni, Y. M.; Zhao, Z. X.

    2004-08-01

    A series of Al-doped Mg 1- xAl xB 2 samples have been fabricated and systematic study on structure and superconducting properties have been carried out for the samples. In addition to a structural transition observed by XRD, TEM micrographs showed the existence of a superstructure of double c-axis lattice constant along the direction perpendicular to the boron honeycomb sheet. In order to investigate the effect of Al doping on flux pinning and critical current properties in MgB 2, measurements on the superconducting transition temperature Tc, irreversible field Birr and critical current density Jc were performed too, for the samples with the doping levels lower than 0.15 in particular. These experimental observations were discussed in terms of Al doping induced changes in carrier concentration.

  5. Interplay of dendritic avalanches and gradual flux penetration in superconducting MgB2 films

    International Nuclear Information System (INIS)

    Shantsev, D V; Goa, P E; Barkov, F L; Johansen, T H; Kang, W N; Lee, S I

    2003-01-01

    Magneto-optical imaging was used to study a zero-field-cooled MgB 2 film at 9.6 K where in a slowly increasing field the flux penetrates by an abrupt formation of large dendritic structures. Simultaneously, a gradual flux penetration takes place, eventually covering the dendrites, and a detailed analysis of this process is reported. We find an anomalously high gradient of the flux density across a dendrite branch, and a peak value that decreases as the applied field increases. This unexpected behaviour is reproduced by flux creep simulations based on the non-local field-current relation in the perpendicular geometry. The simulations also provide indirect evidence that flux dendrites are formed at an elevated local temperature, consistent with a thermo-magnetic mechanism of the instability

  6. Microwave second-harmonic response of ceramic MgB2 samples

    International Nuclear Information System (INIS)

    Agliolo Gallitto, A.; Bonsignore, G.; Li Vigni, M.

    2005-01-01

    Nonlinear microwave response of different ceramic MgB 2 samples has been investigated by the technique of second-harmonic emission. The second-harmonic signal has been investigated as a function of temperature, DC magnetic field and input microwave power. The attention has mainly been devoted to the response at low magnetic fields, where nonlinear processes arising from motion of Abrikosov fluxons are ineffective. The results show that different mechanisms are responsible for the nonlinear response in the different ranges of temperature. At low temperatures, the nonlinear response is due to processes involving weak links. At temperatures close to T c , a further contribution to the harmonic emission is present; it can be ascribed to modulation of the order parameter by the microwave field and gives rise to a peak in the temperature dependence of the harmonic signal

  7. Progress in electrical and mechanical properties of rectangular MgB2 wires

    International Nuclear Information System (INIS)

    Kovac, P; Melisek, T; Kopera, L; Husek, I; Polak, M; Kulich, M

    2009-01-01

    Critical current densities and mechanical resistance of MgB 2 wires made by the rectangular wire-in-tube technique (RWIT) have been studied. Wires prepared from different precursor powders and variable sheath materials are compared. The best electrical performance (10 4 A cm -2 at 11.3 T) was measured for the wire with mechanically alloyed powder doped by SiC. While the critical current densities, J c , at 4.2 K are considerably influenced by the powder used, the differences at 20 K are much smaller. Flattened wires show different levels of critical current anisotropy influenced by the precursor powder used. Stress-strain characteristics and critical current degradation are strongly affected by the applied metallic materials and also by the filament's strength. The highest irreversible strain ε irr = 0.55% was measured for Ti/Cu/Monel sheathed wire with filaments from mechanically alloyed powder.

  8. The superconducting properties of co-doped polycrystalline MgB2

    International Nuclear Information System (INIS)

    Moore, J D; Perkins, G K; Branford, W; Yates, K A; Caplin, A D; Cohen, L F; Chen, Soo Kien; Rutter, N A; MacManus-Driscoll, Judith L

    2007-01-01

    In this study we compare the critical current density, the irreversibility line and the upper critical field of four MgB 2 polycrystalline samples, which are either undoped or have 5% carbon or 5% carbon plus either 1% aluminium or 2% zirconium. We discuss how care must be taken for the extraction of the irreversibility line in such samples. We also show how ac susceptibility and Hall probe imaging can be used to examine whether the samples remain fully connected to the highest available fields. Compared to simple 5% carbon doping we find that co-doping provides modest improvement in the pinning properties at intermediate fields in the carbon plus zirconium doped sample

  9. Comparative study of neutron irradiation and carbon doping in MgB2 single crystals

    International Nuclear Information System (INIS)

    Krutzler, C.; Zehetmayer, M.; Eisterer, M.; Weber, H. W.; Zhigadlo, N. D.; Karpinski, J.

    2007-01-01

    We compare the reversible and irreversible magnetic properties of superconducting carbon doped and undoped MgB 2 single crystals before and after neutron irradiation. A large number of samples with transition temperatures between 38.3 and 22.8 K allows us to study the effects of disorder systematically. Striking similarities are found in the modification of the reversible parameters by irradiation and doping, which are discussed in terms of impurity scattering and changes of the Fermi surface. The irreversible properties are influenced by two counteracting mechanisms: they are enhanced by the newly introduced pinning centers but degraded by changes in the thermodynamic properties. Accordingly, the large neutron induced defects and the small defects from carbon doping lead to significantly different effects on the irreversible properties. Finally, the fishtail effect caused by all kinds of disorder is discussed in terms of an order-disorder transition of the flux-line lattice

  10. Using specific heat to scan gaps and anisotropy of MgB2

    International Nuclear Information System (INIS)

    Bouquet, F.; Wang, Y.; Toulemonde, P.; Guritanu, V.; Junod, A.; Eisterer, M.; Weber, H.W.; Lee, S.; Tajima, S.

    2004-01-01

    We performed specific heat measurements to study the superconducting properties of the ∼40 K superconductor MgB 2 , up to 16 T, using polycrystal and single crystal samples. Our results establish the validity of the two-gap model. We tested the effect of disorder by irradiating our sample. This procedure decreased T c down to ∼26 K, but did not suppress completely the smaller gap, at variance with theoretical expectations. A positive effect of the irradiation was the increase of H c2 up to almost 30 T. Our results on the single crystal allow the anisotropy of each band to be determined independently, and show the existence of a cross-over field well below H c2 characterizing the physics of the small-gapped band. We also present preliminary results on Nb 3 Sn, showing similar, but weaker effects

  11. Phase dynamics of single long Josephson junction in MgB2 superconductor

    Science.gov (United States)

    Chimouriya, Shanker Pd.; Ghimire, Bal Ram; Kim, Ju H.

    2018-05-01

    A system of perturbed sine Gordon equations is derived to a superconductor-insulator-superconductor (SIS) long Joseph-son junction as an extension of the Ambegaokar-Baratoff relation, following the long route of path integral formalism. A computer simulation is performed by discretizing the equations using finite difference approximation and applied to the MgB2 superconductor with SiO2 as the junction material. The solution of unperturbed sG equation is taken as the initial profile for the simulation and observed how the perturbation terms play the role to modify it. It is found initial profile deformed as time goes on. The variation of total Josephson current has also been observed. It is found that, the perturbation terms play the role for phase frustration. The phase frustration achieves quicker for high tunneling current.

  12. Tests on MgB2 for Application to SRF Cavities

    International Nuclear Information System (INIS)

    Tajima, T.; Canabal, A.; Los Alamos; Zhao, Y.; Wollongong U.; Romanenko, A.; Cornell U., LNS; Nantista, C.; Tantawi, S.; SLAC; Phillips, L.; Jefferson Lab; Iwashita, Y.; Kyoto U., Inst. Chem. Res.; Campisi, I.; Oak Ridge; Moeckly, B.; Superconductor Tech., Santa Barbara

    2006-01-01

    Magnesium diboride (MgB 2 ) has a transition temperature (T c ) of ∼40 K, i.e., about 4 times higher than niobium (Nb). Studies in the last 3 years have shown that it could have about one order of magnitude less RF surface resistance (R s ) than Nb at 4 K and seems to have much less power dependence than high-T c materials such as YBCO. However, it was also found that it will depend on the way you deposit the film. The result from on-axis pulsed laser deposition (PLD) showed rapid increase in R s with higher surface magnetic fields compared to the film deposited with reactive evaporation method

  13. The increase in Tc for MgB2 superconductor under high pressure

    International Nuclear Information System (INIS)

    Liu, Z-X; Jin, C-Q; You, J-Y; Li, S-C; Zhu, J-L; Yu, R-C; Li, F-Y; Su, S-K

    2002-01-01

    We report in situ high-pressure studies up to 1.0 GPa on MgB 2 superconductor which had been synthesized at high pressure. The as-prepared sample is of high quality as regards having a sharp superconducting transition (T c ) at 39 K. The in situ high-pressure measurements were carried out using a Be-Cu piston-cylinder-type instrument with a mixed oil as the pressure-transmitting medium, which provides a quasi-hydrostatic pressure environment at low temperature. The superconducting transitions were measured using the electrical conductance method. It is found that T c increases with pressure in the initial pressure range, leading to a parabolic-like T c -P evolution

  14. Pinning enhancement in MgB 2 superconducting thin films by ...

    Indian Academy of Sciences (India)

    ... coated with different concentrations of Fe2O3 nanoparticles by spin coating process. ... Turkey; Ereğli Faculty of Education, Primary Education Department, Bülent Ecevit ... Manuscript received: 8 May 2012; Manuscript revised: 22 July 2012 ...

  15. A possibility of enhancing Jc in MgB2 film grown on metallic hastelloy tape with the use of SiC buffer layer

    International Nuclear Information System (INIS)

    Putri, W. B. K.; Kang, B.; Ranot, M.; Lee, J. H.; Kang, W. N.

    2014-01-01

    We have grown MgB 2 on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and 600 degrees C by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, MgB 2 films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the MgB 2 films on SiC/Hastelloy deposited at 500 and 600 degrees C. From the surface analysis, smaller and denser grains of MgB 2 tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of MgB 2 tapes.

  16. EDX and ion beam treatment studies of filamentary in situ MgB2 wires with Ti barrier

    International Nuclear Information System (INIS)

    Rosova, A.; Kovac, P.; Husek, I.; Kopera, L.

    2011-01-01

    Highlights: → SiC-doped MgB 2 wires with Ti barrier showed good Jc in magnetic field. → Explanation why the Ti barrier fits to SiC-doped MgB 2 filaments. → Ti barrier getters Si from SiC-doped filaments and improve their properties. → Si accumulated in an inner layer of Ti barrier protects filaments from Cu diffusion. → Ion beam treatment helps to discover microstructure of complicated systems. - Abstract: In situ SiC-doped filamentary MgB 2 wires (with the diameter of 0.860 and 0.375 mm) with Cu stabilization separated by Ti barrier layers supported by outer SS sheath and annealed at 800 deg. C/0.5 h have been studied by combination of EDX analysis and ion beam selective etching. It was found that several Ti-Cu inter-metallic compounds were created by Cu-Ti interdiffusion and thus the barrier protection against Cu penetration into the superconducting filaments is limited. We showed an advantage of Ti use as the barrier material in our wires. Ti getters silicon out from the superconducting filament, what purges superconducting MgB 2 from Si and creates an additional Si-rich layer in inner part of Ti barrier which prevents Cu diffusion more effectively.

  17. Automatic development of normal zone in composite MgB2/CuNi wires with different diameters

    Science.gov (United States)

    Jokinen, A.; Kajikawa, K.; Takahashi, M.; Okada, M.

    2010-06-01

    One of the promising applications with superconducting technology for hydrogen utilization is a sensor with a magnesium-diboride (MgB2) superconductor to detect the position of boundary between the liquid hydrogen and the evaporated gas stored in a Dewar vessel. In our previous experiment for the level sensor, the normal zone has been automatically developed and therefore any energy input with the heater has not been required for normal operation. Although the physical mechanism for such a property of the MgB2 wire has not been clarified yet, the deliberate application might lead to the realization of a simpler superconducting level sensor without heater system. In the present study, the automatic development of normal zone with increasing a transport current is evaluated for samples consisting of three kinds of MgB2 wires with CuNi sheath and different diameters immersed in liquid helium. The influences of the repeats of current excitation and heat cycle on the normal zone development are discussed experimentally. The aim of this paper is to confirm the suitability of MgB2 wire in a heater free level sensor application. This could lead to even more optimized design of the liquid hydrogen level sensor and the removal of extra heater input.

  18. Magnetic properties and critical current density of bulk MgB2 polycrystalline with Bi-2212 addition

    International Nuclear Information System (INIS)

    Shen, T M; Li, G; Zhu, X T; Cheng, C H; Zhao, Y

    2005-01-01

    Bulk samples of MgB 2 were prepared with 0, 3, 5, and 10 wt% Bi 2 Sr 2 CaCu 2 O 8 (Bi-2212) particles, added using a simple solid-state reaction route in order to investigate the effect of inclusions of a material with higher T c than the superconducting matrix. The density, diamagnetic signal, and critical current density, J c , of the samples change significantly with the doping level. It is found that J c is significantly enhanced by the Bi-2212 addition. Microstructural analysis indicates that a small amount of Bi-2212 is decomposed into Cu 2 O and other impurity phases while a significant amount of unreacted Bi-2212 particles remains in MgB 2 matrix, and these act as effective pinning centres for vortices. The enhanced pinning force is mainly attributable to these highly dispersed inclusions inserted in the MgB 2 grains. Despite the effectiveness of the high-T c inclusions in increasing superconducting critical currents in our experiment, our results seem to demonstrate the superiority of attractive centres over repulsive ones. A pinning mechanism is proposed to account for the contribution of this type of pinning centre in MgB 2 superconductors. (rapid communication)

  19. Fabrication of extruded wire of MgB2/Al composite material and its superconducting property and microstructure

    Czech Academy of Sciences Publication Activity Database

    Matsuda, K.; Nishimura, K.; Ikeno, S.; Mori, K.; Aoyama, S.; Yabumoto, Y.; Hishinuma, Y.; Müllerová, Ilona; Frank, Luděk; Yurchenko, V. V.; Johansen, T. H.

    2008-01-01

    Roč. 97, - (2008), 012230:1-6 E-ISSN 1742-6596. [European Conference on Applied Superconductivity /8./ - EUCAS 2007. Brussels, 16.09.2007-20.09.2007] Institutional research plan: CEZ:AV0Z20650511 Keywords : MgB2/Al composite * superconductors * electron microscopy Subject RIV: JI - Composite Materials

  20. Effects of graphite doping on critical current density and microstructure of MgB2 bulks by an improved Mg-diffusion method

    International Nuclear Information System (INIS)

    Pan, X.F.; Zhao, Y.; Feng, Y.; Yang, Y.; Cheng, C.H.

    2008-01-01

    abstract: A series of graphite-doped MgB 2 bulks with high density have been successfully prepared by an improved Mg-diffusion method in ambient pressure. The effects of graphite doping on lattice parameters, T c , J c and microstructure of MgB 2 have been investigated. The results show that compared to the nano-C-doped or CNTs-doped MgB 2 , C is not easy to substitute B in graphite-doped MgB 2 . However, at the same C content, the graphite-doped MgB 2 has a higher J c . At 10 K and self-field, the J c for MgB 1.985 C 0.015 reaches 0.58 MA/cm 2 . For the MgB 1.945 C 0.055 , at 5 K, 7 T and 10 K, 6 T the J c achieves 10,000 A/cm 2 which is two orders of magnitude higher than that for the undoped sample. In addition to improving electron scattering and intergranular connectivity, the unreacted graphite in the graphite-doped MgB 2 is proposed to be responsible to the excellent J c properties of MgB 2 in high fields, due to depressed grain growth and enhanced grain boundary flux pinning

  1. Multi-gap superconductivity in MgB2: Magneto-Raman spectroscopy

    International Nuclear Information System (INIS)

    Blumberg, G.; Mialitsin, A.; Dennis, B.S.; Zhigadlo, N.D.; Karpinski, J.

    2007-01-01

    Electronic Raman scattering studies on MgB 2 single crystals as a function of excitation and polarization have revealed three distinct superconducting features: a clean gap below 37 cm -1 and two coherence peaks at 109 and 78 cm -1 which we identify as the superconducting gaps in π- and σ-bands and as the Leggett's collective mode arising from the fluctuation in the relative phase between two superconducting condensates residing on corresponding bands. The temperature and field dependencies of the superconducting features have been established. A phononic Raman scattering study of the E 2g boron stretching mode anharmonicity and of superconductivity induced self-energy effects is presented. We show that anharmonic two phonon decay is mainly responsible for the unusually large linewidth of the E 2g mode. We observe ∼2.5% hardening of the E 2g phonon frequency upon cooling into the superconducting state and estimate the electron-phonon coupling strength associated with this renormalization

  2. Transport relaxation measurements and glassy state effects in superconducting MgB2

    International Nuclear Information System (INIS)

    Olutas, M.; Yetis, H.; Altinkok, A.; Kilic, A.; Kilic, K.

    2008-01-01

    Time dependent effects in superconducting MgB 2 have been studied systematically for the first time by transport relaxation measurements (V-t curves) as a function of transport current (I), temperature (T) and external magnetic field (H). At very low dissipation levels (below ∼1 μV), it was observed that the sample voltage grows up smoothly in time by exhibiting the details of initial stage of relaxation process. At high dissipation levels, steady state corresponding to constant flow rate is maintained within a very short time and monitoring of details of flux dynamic evolving along sample becomes difficult on long time scales. Another interesting behavior is the appearance of voltage peak when the transport current was reduced to a finite value. After peak, it was observed that the sample voltage relaxes smoothly by leveling off within a very short time. The evolution of V-t curves suggests that formation of resistive flow channels along sample develops easily, which is quite similar to that of obtained for the superconducting ceramic samples whose grain boundaries are improved. Time dependent effects were also observed in magnetovoltage measurements (V-H curves) as the field sweep rate (dH/dt) varies. The observations were interpreted mainly in terms of flux trapping in grains

  3. Development of ex situ processed MgB2 wires and their applications to magnets

    International Nuclear Information System (INIS)

    Braccini, Valeria; Nardelli, Davide; Penco, Roberto; Grasso, Giovanni

    2007-01-01

    In spite of the relatively short time dedicated to the development of magnesium diboride conductors since its discovery in early 2001, a substantial improvement was soon achieved in their manufacture and use. Unlike many others HTS and LTS materials, the MgB 2 conductor processing is more open to a number of improvements and modifications that help in making it more attractive for several DC and AC applications. Many kilometres of conductors were already produced throughout the world and it is now possible to start seriously thinking about a systematic industrial production of this material, as it is already possible to purchase it in reasonable lengths on the free market. These remarkable lengths of conductor were also wound in coils and their performance continuously improved in the past years. Here we will present a review of the recent results and a perspective for the future development of this 'new' superconductor, starting from the optimisation of the precursor powders needed to improve the magnetic field behaviour of the tapes, to the conductor development, i.e. the production of multifilamentary Cu-stabilized tapes in lengths up to 1.78 km, to the realization of the first large-scale application devices such as MRI magnets and fault current limiters

  4. Development and fundamental study on a superconducting induction/synchronous motor incorporated with MgB2 cage windings

    International Nuclear Information System (INIS)

    Nakamura, T; Yamada, Y; Nishio, H; Sugano, M; Amemiya, N; Kajikawa, K; Wakuda, T; Takahashi, M; Okada, M

    2012-01-01

    In this paper, a fundamental study of the rotating characteristics of a induction/synchronous motor by use of superconducting MgB 2 cage windings is carried out based on analysis and experiment. Current transport properties of the produced monofilamentary MgB 2 wires are firstly characterized, and then utilized for the determination of the current carrying capacity of the rotor bars. Then, the motor model is designed and fabricated with the aid of conventional (copper) stator windings. We successfully observe the synchronous rotation of the fabricated motor at a rotation speed range from 300 to 1800 rpm. We can also realize an almost constant torque versus speed curve, and this characteristic is explained from the steep take-off of the electric field versus the current density curve, based on the nonlinear electrical equivalent circuit. These results are promising for the practical applications of a high efficiency motor for a liquid hydrogen circulation pump.

  5. Mechanical properties and bending strain effect on Cu-Ni sheathed MgB2 superconducting tape

    International Nuclear Information System (INIS)

    Fu, Minyi; Chen, Jiangxing; Jiao, Zhengkuan; Kumakura, H.; Togano, K.; Ding, Liren; Zhang, Yong; Chen, Zhiyou; Han, Hanmin; Chen, Jinglin

    2004-01-01

    The Young's modulus (E) of Cu-Ni sheathed MgB 2 monofilament tape was measured using electric method. It is about 8.05 x 10 10 Pa, the same order of Cu and its alloys. We found that the lower E value of the MgB 2 component seemed to relate to the lower filament density. The benefits of pre-compression in filaments were discussed in terms of improving stress distribution in the wires and tapes during winding and operation of superconducting magnets. The magnetic field dependence of J c was investigated on the sample subjected to various strain levels through bending with different radii at 4.2 K

  6. Critical current density improvements in MgB2 superconducting bulk samples by K2CO3 additions  

    DEFF Research Database (Denmark)

    Grivel, J.-C.

    2018-01-01

    MgB2 bulk samples with potassium carbonate doping were made by means of reaction of elemental Mg and B powders mixed with various amounts of K2CO3. The Tc of the superconducting phase as well as its a-axis parameter were decreased as a result of carbon doping. Potassium escaped the samples during...... reaction. The critical current density of MgB2 was improved both in self field and under applied magnetic field for T ≤ 30 K, with optimum results for 1 mol% K2CO3 addition. The normalized flux pinning force (f(b)) shows that the flux pinning mechanism at low field is similar for all samples, following...

  7. MgB2 and Mg1-xAlxB2 single crystals: high pressure growth and physical properties

    International Nuclear Information System (INIS)

    Karpinski, J.; Kazakov, S.M.; Jun, J.; Zhigadlo, N.D.; Angst, M.; Puzniak, R.; Wisniewski, A.

    2004-01-01

    Single crystals of MgB 2 have been grown with a high pressure cubic anvil technique. They grow via the peritectic decomposition of the MgNB 9 ternary nitride. The crystals are of a size up to 2 x 1 x 0.1 mm 3 with a weight up to 230 μg. Typically they have transition temperatures between 38 and 38.6 K with a width of 0.3-0.5 K. Investigations of the P-T phase diagram prove that the MgB 2 phase is stable at least up to 2190 deg. C at high hydrostatic pressure in the presence of Mg vapor under high pressure. Substitution of aluminum for magnesium in single crystals leads to stepwise decrease of T c . This indicates a possible appearance of superstructures or phases with different T c 's. The upper critical field decreases with Al doping

  8. First-principles study of the (0001)-MgB2 surface finished in Mg and B

    International Nuclear Information System (INIS)

    Segura, Sully; Martínez, Jairo Arbey Rodríguez; Moreno-Armenta, María Guadalupe

    2014-01-01

    We present a study based on Density Functional Theory (DFT) of the volume and two surfaces (0001) of MgB 2 , one of them terminated in Mg and the other one terminated in B. Each one of the surface was relaxed and their electronic properties were determined. From calculation of the enthalpy of formation we found that the Mg-terminated surface is energetically favored. The bands seem to present a formation similar to the Dirac's cone as that are presented in graphene, but in MgB 2 is above of the Fermi level. In the three cases, volume and the two surfaces, the behaviour is boron-metallic, because there are strong presence of B orbital's in the neighborhood of the Ferm level

  9. Electron paramagnetic resonance and Raman spectroscopy studies on carbon-doped MgB2 superconductor nanomaterials

    International Nuclear Information System (INIS)

    Bateni, Ali; Somer, Mehmet; Erdem, Emre; Repp, Sergej; Weber, Stefan; Acar, Selcuk; Kokal, Ilkin; Häßler, Wolfgang

    2015-01-01

    Undoped and carbon-doped magnesium diboride (MgB 2 ) samples were synthesized using two sets of mixtures prepared from the precursors, amorphous nanoboron, and as-received amorphous carbon-doped nanoboron. The microscopic defect structures of carbon-doped MgB 2 samples were systematically investigated using X-ray powder diffraction, Raman and electron paramagnetic resonance spectroscopy. Mg vacancies and C-related dangling-bond active centers could be distinguished, and sp 3 -hybridized carbon radicals were detected. A strong reduction in the critical temperature T c was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra

  10. Preparation of biaxially oriented TlCu-1234 thin films

    CERN Document Server

    Khan, N A; Tateai, F; Kojima, T; Ishida, K; Terada, N; Ihara, H

    1999-01-01

    The single phase of TlCu-1234 superconductor thin films is prepared for the first time by the amorphous phase epitaxy (APE) method, which is thallium treatment of sputtered amorphous phase at 900 degrees C for 1 h. The amorphous $9 phase is prepared by sputtering from the stoichiometric target composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. The films on the SrTiO/sub 3/ substrate are aligned biaxially after the thallium treatment. Highly reproducible $9 TlCu-1234 films are prepared by this method. The XRD reflected a predominant single phase with the c-axis lattice constant of 18.74 AA. This lattice constant value is in between that of Cu-1234 (17.99 AA) and Tl-1234 (19.11 AA) . The $9 pole figure measurements of (103) reflection of the films showed a-axis-oriented crystals with Delta phi =0.8 degrees . The composition of the films after energy dispersive X-ray (EDX) measurements is Tl/sub 0.8/Cu/sub 0.2/Ba/sub $9 2/Ca/sub 3/Cu/sub 4/O /sub 12-y/. From the resistivity measurements, the T/sub c/ is 113 K...

  11. Nanoparticles of the superconductor MgB2: structural characterization and in situ study of synthesis kinetics

    International Nuclear Information System (INIS)

    Cui Chunxiang; Liu Debao; Shen Yutian; Sun Jinbin; Meng Fanbin; Wang Ru; Liu Shuangjin; Greer, A.L.; Chen, S.K.; Glowacki, B.A.

    2004-01-01

    Single-crystal MgB 2 nanoparticles, with diameters in the range 20-100 nm, have been synthesized in situ in the sample chamber of an X-ray diffractometer. The reaction kinetics are analyzed and related to the atomic-level structure of the particles as observed by high-resolution electron microscopy. Synthesis conditions may have a significant influence on microstructure and superconducting properties

  12. Dynamic vortex-phase diagram of MgB2 single crystals near the peak-effect region

    International Nuclear Information System (INIS)

    Kim, Heon-Jung; Lee, Hyun-Sook; Kang, Byeongwon; Chowdhury, P.; Kim, Kyung-Hee; Park, Min-Seok; Lee, Sung-Ik

    2006-01-01

    The dynamic vortex-phase diagram of MgB 2 single crystals has been constructed by using voltage noise characteristics. Between the onset (H on ) and the peak (H p ) magnetic fields, crossovers from a state with large noises to a noise-free state were observed with increasing current while above H p , a reverse behavior was found. We will discuss the dynamic vortex phase diagram and the possible origins of the crossovers

  13. The effect of copper additions in the synthesis of in situ MgB2 Cu-sheathed wires

    International Nuclear Information System (INIS)

    Woźniak, M.; Hopkins, S.C.; Gajda, D.; Glowacki, B.A.

    2012-01-01

    The powder-in-tube (PIT) technique has been used to fabricate copper-sheathed magnesium diboride (MgB 2 ) wires using an insitu reaction method. The effect of copper powder additions, magnesium-boron molar ratio and heat treatment is studied by SEM, XRD, transport critical current I c (B) and resistivity ρ(T, B) measurements. The results show that addition of copper powder to the core of the wire accelerates the formation of MgB 2 and hence increases its amount and greatly decreases the amount of Mg-Cu intermetallic phases present in the core of the wire after heat treatment. Excess magnesium proved to be effective in compensating for Mg loss due to interdiffusion with the Cu of the wire sheath and resulted in less unreacted boron in the core for wires without added Cu, but seems to oppose the accelerated formation of MgB 2 in Cu added wires. The highest critical current density, 2.8 × 10 4 A cm -2 at 3 T and 4.2 K, was achieved for a wire with a stoichiometric Mg:B ratio and 3 at.% added copper powder heat treated at 700 °C for 5 min.

  14. In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

    Science.gov (United States)

    Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

    2008-02-01

    We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

  15. Fabrication and properties of multifilamentary MgB 2 wires by in-situ powder-in-tube process

    Science.gov (United States)

    Wang, Q. Y.; Jiao, G. F.; Liu, G. Q.; Xiong, X. M.; Yan, S. C.; Zhang, P. X.; Sulpice, A.; Mossang, E.; Feng, Y.; Yan, G.

    2010-11-01

    We have fabricated the long TiC-doped MgB2 wires with 6 filaments by in-situ powder-in-tube method using Nb as the barrier and copper as the stabilizer. To improve the strength of wires, the Nb-core was used as the central filament. The transport engineering critical current density (Jce) of the samples sintered at different temperature were measured, which reaches 2.5 × 104 A/cm2 at 4.2 K, 5 T. 100 m MgB2 wires with different diameter were wound into coils and the transport critical current (Ic) of the coil were measured at 30 K in self-field. The Jce value 100 m coil achieves 1.1 × 104 A/cm2 in 1.2 mm wire. The reasons leading to the enhancement of high field Jce were discussed. The results show a good potential to fabricate high performance MgB2 wires and tapes at ambient pressure on an industrial scale.

  16. The Influence of CuFe2O4 Nanoparticles on Superconductivity of MgB2

    Science.gov (United States)

    Novosel, Nikolina; Pajić, Damir; Skoko, Željko; Mustapić, Mislav; Babić, Emil; Zadro, Krešo; Horvat, Joseph

    The influence of CuFe2O4 nanoparticle doping on superconducting properties of Fe-sheated MgB2 wires has been studied. The wires containing 0, 3 and 7.5 wt.% of monodisperse superparamagnetic nanoparticles (˜7 nm) were sintered at 650°C or 750°C for 1 hour in the pure argon atmosphere. X-ray diffraction patterns of doped samples showed very small maxima corresponding to iron boride and an increase in the fraction of MgO phase indicating some interaction of nanoparticles with Mg and B. Both magnetic and transport measurements (performed in the temperature range 2-42 K and magnetic field up to 16 T) showed strong deterioration of the superconducting properties upon doping with CuFe2O4. The transition temperatures, Tc, of doped samples decreased for about 1.4 K per wt.% of CuFe2O4. Also, the irreversibility fields Birr(T) decreased progressively with increasing doping. Accordingly, also the suppression of Jc with magnetic field became stronger. The observed strong deterioration of superconducting properties of MgB2 wires is at variance with reported enhancement of critical currents at higher temperatures (determined from magnetization) in bulk MgB2 samples doped with Fe3O4 nanoparticles. The probable reason for this discrepancy is briefly discussed

  17. Behaviour of filamentary MgB2 wires subjected to tensile stress at 4.2 K

    International Nuclear Information System (INIS)

    Kováč, P; Kopera, L; Melišek, T; Hušek, I; Rindfleisch, M; Haessler, W

    2013-01-01

    Different filamentary MgB 2 wires have been subjected to tensile stress at 4.2 K. Stress–strain and critical current versus stress and strain characteristics of wires differing by filament architecture, sheath materials, deformation and heat treatment were measured and compared. It was found that the linear increase of critical current due to the pre-compression effect (ranging from 5% up to ≈20%) is affected by thermal expansion and the strength of used metallic sheaths. The values of irreversible strain ε irr and stress σ irr depend dominantly on the applied outer sheath and its final heat treatment conditions. Consequently, the strain-tolerance of MgB 2 wires is influenced by several parameters and it is difficult to see a clear relation between I c (ε) and σ(ε) characteristics. The lowest ε irr was measured for Monel sheathed wires (0.3–0.6%), medium for GlidCop ® sheath (0.48–0.6%), and the highest ε irr = 0.6–0.9% were obtained for MgB 2 wires reinforced by the stainless steel 316L annealed at temperature between 600 and 800 ° C. The highest ε irr = 0.9% and σ irr = 900 MPa were measured for the work-hardened steel, which is not considerably softened by the heat treatment at 600 ° C/2.5 h. (paper)

  18. Refinement of Crystalline Boron and the Superconducting Properties of MgB2 by Attrition Ball Milling

    International Nuclear Information System (INIS)

    Lee, J. H.; Shin, S. Y.; Park, H. W.; Jun, B. H.; Kim, C. J.

    2008-01-01

    We report refinement of crystalline boron by an attrition ball milling system and the superconducting properties of the MgB 2 pellets prepared from the refined boron. In this work, we have conducted the ball milling with only crystalline boron powder, in order to improve homogeneity and control the grain size of the MgB 2 that is formed from it. We observed that the crystalline responses in the ball-milled boron became broader and weaker when the ball-milling time was further increased. On the other hand, the B 2 O 3 peak became stronger in the powders, resulting in an increase in the amount of MgO within the MgB 2 volume. The main reason for this is a greater oxygen uptake. From the perspective of the superconducting properties, however, the sample prepared from boron that was ball milled for 5 hours showed an improvement of critical current density (J c ), even with increased MgO phase, under an external magnetic field at 5 and 20 K.

  19. Superconductivity and thermal property of MgB2/aluminum matrix composite materials fabricated by 3-dimensional penetration casting method

    International Nuclear Information System (INIS)

    Matsuda, Kenji; Saeki, Tomoaki; Nishimura, Katsuhiko; Ikeno, Susumu; Mori, Katsunori; Yabumoto, Yukinobu

    2006-01-01

    Superconductive MgB 2 /Al composite material with low and high volume fractions of particles were fabricated by our special pre-packing technique and 3-dimensional penetration casting method. The composite material showed homogeneous distribution of MgB 2 particles in the Al-matrix with neither any aggregation of particles nor defects such as cracks or cavities. The critical temperature of superconducting transition (T C ) was determined by electrical resistivity and magnetization to be about 37-39 K. Specific heat measurements further supported these T C findings. The Meissner effect was also verified in the liquid He, in which a piece of the composite floated above a permanent magnet. The thermal conductivity of the MgB 2 /Al composite material was about 25 W/K·m at 30K, a value much higher than those found for NbTi or Nb 3 Sn superconducting wires normally used in practice, which are 0.5 and 0.2 W/K·m at 10 K, respectively. A billet of the superconducting material was successfully hot-extruded, forming a rod. The same as the billet sample, the rod showed an onset T C of electrical resistivity of 39 K. (author)

  20. Evaluation of Young’s modulus of MgB2 filaments in composite wires for the superconducting links for the high-luminosity LHC upgrade

    Science.gov (United States)

    Sugano, Michinaka; Ballarino, Amalia; Bartova, Barbora; Bjoerstad, Roger; Gerardin, Alexandre; Scheuerlein, Christian

    2016-02-01

    MgB2 wire is a promising superconductor for the superconducting links for the high-luminosity upgrade of the large Hadron collider at CERN. The mechanical properties of MgB2 must be fully quantified for the cable design, and in this study, we evaluate the Young’s modulus of MgB2 filaments in wires with a practical level of critical current. The Young’s moduli of MgB2 filaments by two different processes, in situ and ex situ, were compared. Two different evaluation methods were applied to an in situ MgB2 wire, a single-fiber tensile test and a tensile test after removing Monel. In addition, the Young’s modulus of the few-micron-thick Nb-Ni reaction layer in an ex situ processed wire was evaluated using a nanoindentation testing technique to improve the accuracy of analysis based on the rule of mixtures. The Young’s moduli of the in situ and ex situ MgB2 wires were in the range of 76-97 GPa and no distinct difference depending on the fabrication process was found.

  1. submitter Evaluation of Young’s modulus of MgB2 filaments in composite wires for the superconducting links for the high-luminosity LHC upgrade

    CERN Document Server

    Sugano, Michinaka; Bartova, Barbora; Bjoerstad, Roger; Gerardin, Alexandre; Scheuerlein, Christian

    2015-01-01

    MgB2 wire is a promising superconductor for the superconducting links for the high-luminosity upgrade of the large Hadron collider at CERN. The mechanical properties of MgB2 must be fully quantified for the cable design, and in this study, we evaluate the Young's modulus of MgB2 filaments in wires with a practical level of critical current. The Young's moduli of MgB2 filaments by two different processes, in situ and ex situ, were compared. Two different evaluation methods were applied to an in situ MgB2 wire, a single-fiber tensile test and a tensile test after removing Monel. In addition, the Young's modulus of the few-micron-thick Nb–Ni reaction layer in an ex situ processed wire was evaluated using a nanoindentation testing technique to improve the accuracy of analysis based on the rule of mixtures. The Young's moduli of the in situ and ex situ MgB2 wires were in the range of 76–97 GPa and no distinct difference depending on the fabrication process was found.

  2. Ex-situ manufacturing of SiC-doped MgB2 used for superconducting wire in medical device applications

    Science.gov (United States)

    Herbirowo, Satrio; Imaduddin, Agung; Sofyan, Nofrijon; Yuwono, Akhmad Herman

    2017-02-01

    Magnesium diboride (MgB2) is a superconductor material with a relatively high critical temperature. Due to its relatively high critical temperature, this material is promising and has the potential to replace Nb3Sn for wire superconducting used in many medical devices. In this work, nanoparticle SiC-doped MgB2 superconducting material has been fabricated through an ex-situ method. The doping of nanoparticle SiC by 10 and 15 wt% was conducted to analyze its effect on specific resistivity of MgB2. The experiment was started by weighing a stoichiometric amount of MgB2 and nanoparticles SiC. Both materials were mixed and grounded for 30 minutes by using an agate mortar. The specimens were then pressed into a 6 mm diameter stainless steel tube, which was then reduced until 3 mm through a wire drawing method. X-ray diffraction analysis was conducted to confirm the phase, whereas the superconductivity of the specimens was analyzed by using resistivity measurement under cryogenic magnetic system. The results indicated that the commercial MgB2 showed a critical temperature of 37.5 K whereas the SiC doped MgB2 has critical temperature of 38.3 K.

  3. Study of the potential of three different MgB2 tapes for application in cylindrical coils operating at 20 K

    International Nuclear Information System (INIS)

    Pitel, J; Kováč, P; Tropeano, M; Grasso, G

    2015-01-01

    The goal of this theoretical study is to illustrate the potential of three different MgB 2 tapes, developed by Columbus Superconductors, for application in cylindrical coils. First, the distribution of critical currents and electric fields of individual turns is compared when the winding of the model coil is made with tapes having different I c (B) and anisotropy values. Second, the influence of the winding geometry on basic parameters of cylindrical coils which consist of a set of pancake coils, such as critical current I cmin , central magnetic field B 0 and stored energy E, is analysed. The winding geometry of the coils, i.e. the outer winding radius and the coil length, with the same inner winding radius, was changed from a disc shape to a long thin solenoid in such a way that the overall tape length was held constant, and considered as a parameter. Finally, the winding cross-section of the coil is optimized with respect to the constant tape length in order to reach the maximum central field. The results of calculations show that for a given overall tape length and inner winding radius there exists only one winding geometry which generates the maximum central field. The overall tape length, as a parameter, is changed in a broad range from 500 m to 10 km. All calculations were performed using the experimental data measured at 20 K while the effect of the anisotropy in the I c (B) characteristic of the short samples is taken into account. (paper)

  4. Superior critical current density obtained in MgB_2 bulks via employing carbon-coated boron and minor Cu addition

    International Nuclear Information System (INIS)

    Peng, Junming; Liu, Yongchang; Ma, Zongqing; Shahriar Al Hossain, M.; Xin, Ying; Jin, Jianxun

    2016-01-01

    Highlights: • Usage of carbon-coated boron leads to high level of homogeneous carbon doping. • Cu addition improves MgB_2 grain connectivity, leading to higher J_c at low fields. • Cu addition reduces MgO impurity, also contributing to the improvement of J_c. - Abstract: High performance Cu doped MgB_2 bulks were prepared by an in-situ method with carbon-coated amorphous boron as precursor. It was found that the usage of carbon-coated boron in present work leads to the formation of uniformly refined MgB_2 grains, as well as a high level of homogeneous carbon doping in the MgB_2 samples, which significantly enhance the J_c in both Cu doped and undoped bulks compared to MgB_2 bulks with normal amorphous boron precursor. Moreover, minor Cu can service as activator, and thus facilitates the growth of MgB_2 grains and improves crystallinity and grain connectivity, which can bring about the excellent critical current density (J_c) at self fields and low fields (the best values are 7 × 10"5 A/cm"2 at self fields, and 1 × 10"5 A/cm"2 at 2 T, 20 K, respectively). Simultaneously, minor Cu addition can reduce the amount of MgO impurity significantly, also contributing to the improvement of J_c at low fields. Our work suggests that Cu-activated sintering combined with employment of carbon-coated amorphous boron as precursor could be a promising technique to produce practical MgB_2 bulks or wires with excellent J_c on an industrial scale.

  5. Co-current Doping Effect of Nanoscale Carbon and Aluminum Nitride on Critical Current Density and Flux Pinning Properties of Bulk MgB2 Superconductors

    Science.gov (United States)

    Tripathi, D.; Dey, T. K.

    2018-05-01

    The effect of nanoscale aluminum nitride (n-AlN) and carbon (n-C) co-doping on superconducting properties of polycrystalline bulk MgB2 superconductor has been investigated. Polycrystalline pellets of MgB2, MgB2 + 0.5 wt% AlN (nano), MgB_{1.99}C_{0.01} and MgB_{1.99}C_{0.01} + 0.5 wt% AlN (nano) have been synthesized by a solid reaction process under inert atmosphere. The transition temperature (TC) estimated from resistivity measurement indicates only a small decrease for C (nano) and co-doped MgB2 samples. The magnetic field response of investigated samples has been measured at 4, 10, and 20 K in the field range ± 6 T. MgB2 pellets co-doped with 0.5 wt% n-AlN and 1 wt% n-C display appreciable enhancement in critical current density (J_C) of MgB2 in both low (≥ 3 times), as well as, high-field region (≥ 15 times). J_C versus H behavior of both pristine and doped MgB2 pellets is well explained in the light of the collective pinning model. Further, the normalized pinning force density f_p(= F_p/F_{pmax}) displays a fair correspondence with the scaling procedure proposed by Eisterer et al. Moreover, the scaled data of the pinning force density (i.e., f_p{-}h data) of the investigated pellets at different temperature are well interpreted by a modified Dew-Hughes expression reported by Sandu and Chee.

  6. Very high upper critical fields in MgB2 produced by selective tuning of impurity scattering

    International Nuclear Information System (INIS)

    Gurevich, A; Patnaik, S; Braccini, V; Kim, K H; Mielke, C; Song, X; Cooley, L D; Bu, S D; Kim, D M; Choi, J H; Belenky, L J; Giencke, J; Lee, M K; Tian, W; Pan, X Q; Siri, A; Hellstrom, E E; Eom, C B; Larbalestier, D C

    2004-01-01

    We report a significant enhancement of the upper critical field H c2 of different MgB 2 samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities ρ, we show a clear trend of an increase in H c2 as ρ increases. One particular high resistivity film had a zero-temperature H c2 (0) well above the H c2 values of competing non-cuprate superconductors such as Nb 3 Sn and Nb-Ti. Our high-field transport measurements give record values H c2 perp (0) ∼ 34 T and H c2 par (0) ∼ 49 T for high resistivity films and H c2 (0) ∼ 29 T for untextured bulk polycrystals. The highest H c2 film also exhibits a significant upward curvature of H c2 (T) and a temperature dependence of the anisotropy parameter γ(T)=H c2 par / H c2 opposite to that of single crystals: γ(T) decreases as the temperature decreases, from γ(T c ) ∼ 2 γ(0) ∼ 1.5. This remarkable H c2 enhancement and its anomalous temperature dependence are a consequence of the two-gap superconductivity in MgB 2 , which offers special opportunities for further H c2 increases by tuning of the impurity scattering by selective alloying on Mg and B sites. Our experimental results can be explained by a theory of two-gap superconductivity in the dirty limit. The very high values of H c2 (T) observed suggest that MgB 2 can be made into a versatile, competitive high-field superconductor

  7. Orientation control of chemical solution deposited LaNiO3 thin films

    International Nuclear Information System (INIS)

    Ueno, Kengo; Yamaguchi, Toshiaki; Sakamoto, Wataru; Yogo, Toshinobu; Kikuta, Koichi; Hirano, Shin-ichi

    2005-01-01

    High quality LaNiO 3 (LNO) thin films with preferred orientation could be synthesized on Pt/Ti/SiO 2 /Si substrates at 700 deg. C using the chemical solution deposition method. The homogeneous and stable LNO precursor solutions were prepared using lanthanum isopropoxide and nickel (II) acetylacetonate in a mixed solvent of absolute ethanol and 2-methoxyethanol. The oriented LNO thin films exhibit metallic electro-conduction, and their resistivity at room temperature is sufficiently low for making them an alternative electrode material for functional ceramic thin films

  8. Effect of nano-carbon particle doping on the flux pinning properties of MgB2 superconductor

    OpenAIRE

    Soltanian, S.; Horvat, J.; Wang, X. L.; Munroe, P.; Dou, S. X.

    2003-01-01

    Polycrystalline MgB2-xCx samples with x=0.05, 0.1, 0.2, 0.3, 0.4 nano-particle carbon powder were prepared using an in-situ reaction method under well controlled conditions to limit the extent of C substitution. The phases, lattice parameters, microstructures, superconductivity and flux pinning were characterized by XRD, TEM, and magnetic measurements. It was found that both the a-axis lattice parameter and the Tc decreased monotonically with increasing doping level. For the sample doped with...

  9. Mapping flux avalanches in MgB2 films-equivalence between magneto-optical imaging and magnetic measurements

    International Nuclear Information System (INIS)

    Colauto, F; Choi, E M; Lee, J Y; Lee, S I; Yurchenko, V V; Johansen, T H; Ortiz, W A

    2007-01-01

    Vortex avalanches are known to occur in MgB 2 films within a certain range of temperatures and magnetic fields. These events, resulting from a thermomagnetic instability, were first revealed by real-time magneto-optical imaging, which exposed dendritic paths of abrupt flux propagation. This very powerful technique has, however, a practical limitation, since sensors that are currently available cannot be used at high magnetic fields. This letter shows that results obtained using dc magnetometry are in good correspondence with those furnished by magneto-optical imaging, demonstrating that the two techniques can be efficiently used as complementary tools to map vortex avalanches in superconducting films. (rapid communication)

  10. Multi-band description of the specific heat and thermodynamic critical field in MgB2 superconductor

    Science.gov (United States)

    Szcześniak, R.; Jarosik, M. W.; Tarasewicz, P.; Durajski, A. P.

    2018-05-01

    The thermodynamic properties of MgB2 superconductor can be explained using the multi-band models. In the present paper we have examined the experimental data available in literature and we have found out that it is possible to reproduce the measured values of the superconducting energy gaps, the thermodynamic critical magnetic field and specific heat jump within the framework of two-band Eliashberg formalism and appropriate defined free energy difference between superconducting and normal state. Moreover, we found that the obtained results differ significantly from the predictions of the conventional Bardeen-Cooper-Schrieffer theory.

  11. Optimization of the copper addition to the core of in situ Cu-sheathed MgB2 wires

    International Nuclear Information System (INIS)

    Woźniak, M; Juda, K L; Hopkins, S C; Glowacki, B A; Gajda, D

    2013-01-01

    Recent results on powder-in-tube in situ Cu-sheathed MgB 2 wires have shown that copper powder additions to the core can accelerate the formation of MgB 2 , increasing its volume fraction and greatly decreasing the amount of Mg–Cu intermetallic phases present in the core after heat treatment. The amount of added copper and heat treatment conditions strongly affect the critical current of the wire and require optimization. To identify the optimum parameters, eight wires with starting core compositions of Mg+2B+xCu with x = 0, 0.01, 0.03, 0.05, 0.07, 0.09, 0.12 and 0.15 were prepared with two heating ramp rates and their properties were investigated by SEM, XRD and J c and n-value measurements. The highest J c was found to be for x = 0.09, whereas x = 0.03 resulted in the highest n-value. The results are relatively independent of the heating ramp rate used for heat treatment. (paper)

  12. Large-scale high-resolution scanning Hall probe microscope used for MgB2 filament characterization

    International Nuclear Information System (INIS)

    Cambel, V; Fedor, J; Gregusova, D; Kovac, P; Husek, I

    2005-01-01

    The scanning Hall probe microscope (SHPM) is an important imaging tool used for detailed studies of superconductors in basic science as well as in the industrial sector. It can be used for the studies of losses, current distribution, and effects at grain boundaries. However, only a few SHPMs for magnetic field imaging at temperatures below 77 K have been proposed up to now, most of them designed for small-area (∼10x10 μm 2 ) scanning. We present a large-scale low-temperature SHPM developed for imaging the entire magnetic field in close proximity to magnetic and superconducting samples at 4.2-300 K. The microscope combines a large scanned area and high spatial and magnetic field resolution. The instrument is designed as an insert of standard helium flowing cryostats. The Hall sensor scans an area up to 7 x 25 mm 2 in the whole temperature interval with a spatial resolution better than 5 μm. The presented system is used for the study of ex situ prepared MgB 2 filament. We show that external magnetic field induces local supercurrents in the MgB 2 , from which the critical current can be estimated. Moreover, it indicates the microstructure and space homogeneity of the superconductor

  13. Field cooling of a MgB2 cylinder around a permanent magnet stack: prototype for superconductive magnetic bearing

    International Nuclear Information System (INIS)

    Perini, E; Giunchi, G

    2009-01-01

    The behaviour of bulk superconductors as levitators of permanent magnets (PMs) has been extensively studied for the textured YBCO high-temperature superconductor material, in the temperature range lower than 77 K, obtaining extremely high trapped fields but also experiencing limitations on the mechanical characteristics of the material and on the possibility to produce large objects. Alternatively, bulk MgB 2 , even if it is superconducting at lower temperatures, has fewer mechanical problems, when fully densified, and presents stable magnetization in the temperature range between 10 and 30 K. With the reactive Mg-liquid infiltration technique we have produced dense MgB 2 bulk cylinders of up to 65 mm diameter and 100 mm height. This kind of cylinder can be consider as a prototype of a passive magnetic bearing for flywheels or other rotating electrical machines. We have conductively cooled one of these superconducting cylinders inside a specially constructed cryostat, and the levitation forces and stiffness, with respect to axial movements of various arrangements of the PM, have been measured as a function of the temperature below T c . We verified the very stable characteristics of the induced magnetization after several cycles of relative movements of the PM and the superconducting cylinder.

  14. Effects of carbon concentration and filament number on advanced internal Mg infiltration-processed MgB2 strands

    International Nuclear Information System (INIS)

    Li, G Z; Sumption, M D; Zwayer, J B; Susner, M A; Collings, E W; Rindfleisch, M A; Thong, C J; Tomsic, M J

    2013-01-01

    In this paper we show that an advanced internal Mg infiltration method (AIMI) is effective in producing superconducting wires containing dense MgB 2 layers with high critical current densities. The in-field critical current densities of a series of AIMI-fabricated MgB 2 strands were investigated in terms of C doping levels, heat treatment (HT) time and filament numbers. The highest layer J c for our monofilamentary AIMI strands was 1.5 × 10 5 A cm −2 at 10 T, 4.2 K, when the C concentration was 3 mol% and the strand was heat-treated at 675 ° C for 4 h. Transport critical currents were also measured at 4.2 K on short samples and 1 m segments of 18-filament C doped AIMI strands. The layer J c s reached 4.3 × 10 5 A cm −2 at 5 T and 7.1 × 10 4 A cm −2 at 10 T, twice as high as those of the best powder-in-tube strands. The analysis of these results indicates that the AIMI strands, possessing both high layer J c s and engineering J e s after further optimization, have strong potential for commercial applications. (paper)

  15. Critical Current and Stability of MgB$_2$ Twisted-Pair DC Cable Assembly Cooled by Helium Gas

    CERN Document Server

    AUTHOR|(CDS)2069632; Ballarino, Amalia; Yang, Yifeng; Young, Edward Andrew; Bailey, Wendell; Beduz, Carlo

    2013-01-01

    Long length superconducting cables/bus-bars cooled by cryogenic gases such as helium operating over a wider temperature range are a challenging but exciting technical development prospects, with applications ranging from super-grid transmission to future accelerator systems. With limited existing knowledge and previous experiences, the cryogenic stability and quench protection of such cables are crucial research areas because the heat transfer is reduced and temperature gradient increased compared to liquid cryogen cooled cables. V-I measurements on gas-cooled cables over a significant length are an essential step towards a fully cryogenic stabilized cable with adequate quench protection. Prototype twisted-pair cables using high-temperature superconductor and MgB2 tapes have been under development at CERN within the FP7 EuCARD project. Experimental studies have been carried out on a 5-m-long multiple MgB$_2$ cable assembly at different temperatures between 20 and 30 K. The subcables of the assembly showed sim...

  16. Experimental testing and modelling of a resistive type superconducting fault current limiter using MgB2 wire

    International Nuclear Information System (INIS)

    Smith, A C; Pei, X; Oliver, A; Husband, M; Rindfleisch, M

    2012-01-01

    A prototype resistive superconducting fault current limiter (SFCL) was developed using single-strand round magnesium diboride (MgB 2 ) wire. The MgB 2 wire was wound with an interleaved arrangement to minimize coil inductance and provide adequate inter-turn voltage withstand capability. The temperature profile from 30 to 40 K and frequency profile from 10 to 100 Hz at 25 K were tested and reported. The quench properties of the prototype coil were tested using a high current test circuit. The fault current was limited by the prototype coil within the first quarter-cycle. The prototype coil demonstrated reliable and repeatable current limiting properties and was able to withstand a potential peak current of 372 A for one second without any degradation of performance. A three-strand SFCL coil was investigated and demonstrated scaled-up current capacity. An analytical model to predict the behaviour of the prototype single-strand SFCL coil was developed using an adiabatic boundary condition on the outer surface of the wire. The predicted fault current using the analytical model showed very good correlation with the experimental test results. The analytical model and a finite element thermal model were used to predict the temperature rise of the wire during a fault. (paper)

  17. The elastic properties, generalized stacking fault energy and dissociated dislocations in MgB2 under different pressure

    KAUST Repository

    Feng, Huifang

    2013-05-31

    The 〈112̄0〉 perfect dislocation in MgB2 is suggested to dissociate into two partial dislocations in an energy favorable way 〈112̄0〉 → 1/2 〈112̄0〉 + SF + 1/2 〈112̄0〉. This dissociation style is a correction of the previous dissociation 〈1000〉 → 1/3 〈11̄00〉 SF + 1/3 〈 2100〉proposed by Zhu et al. to model the partial dislocations and stacking fault observed by transmission electron microscopy. The latter dissociation results in a maximal stacking fault energy rather than a minimal one according to the generalized stacking fault energy calculated from first-principles methods. Furthermore, the elastic constants and anisotropy of MgB2 under different pressure are investigated. The core structures and mobilities of the 〈112̄0〉 dissociated dislocations are studied within the modified Peierls-Nabarro (P-N) dislocation theory. The variational method is used to solve the modified P-N dislocation equation and the Peierls stress is also determined under different pressure. High pressure effects on elastic anisotropy, core structure and Peierls stress are also presented. © 2013 Springer Science+Business Media New York.

  18. Orienting Block Copolymer Thin Films via Entropy and Surface Plasma Treatment

    Science.gov (United States)

    Ho, Rong-Ming; Lu, Kai-Yuan; Lo, Ting-Ya; Dehghan, Ashkan; Shi, An-Chang; Prokopios, Georgopanos; Avgeropoulos, Apostolos

    Controlling the orientation of nanostructured thin films of block copolymers (BCPs) is essential for next generation lithography. In the thin-film state, how to achieve the perpendicular orientation of the nanostructured microdomains remains challenging due to the interfacial effects from the air and also the substrate, especially for the blocks with silicon containing segments which usually have different surface energies, favoring parallel microdomain orientation. Here, we show that entropic effect can be used to control the orientation of BCP thin films. Specifically, we used the architecture of star-block copolymers consisting of polystyrene (PS) and poly(dimethylsiloxane) (PDMS) blocks to regulate the entropic contribution to the self-assembled nanostructures. Moreover, we aim to achieve the formation of perpendicular orientation from the air surface via surface plasma treatment to neutralize the interfacial energy difference. By combining the architecture effect (entropy effect) on BCP self-assembly and the surface plasma treatment (enthalpy effect), well-defined perpendicular PDMS microdomains in the PS-b-PDMS thin film can be formed from the bottom of non-neutral substrate and the top of the thin film surface, giving great potential for lithographic applications.

  19. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Very thin layers of rare earth oxides, such as Sm2O3 and epitaxial Gd2O3, grown by thermal ... As the inorganic salts of the lanthanides, such as their halides, are ... sodium hydroxide, followed by the addition of ethanolic. 1,10-phenanthroline ...

  20. Tuning polymorphism and orientation in organic semiconductor thin films via post-deposition processing.

    Science.gov (United States)

    Hiszpanski, Anna M; Baur, Robin M; Kim, Bumjung; Tremblay, Noah J; Nuckolls, Colin; Woll, Arthur R; Loo, Yueh-Lin

    2014-11-05

    Though both the crystal structure and molecular orientation of organic semiconductors are known to impact charge transport in thin-film devices, separately accessing different polymorphs and varying the out-of-plane molecular orientation is challenging, typically requiring stringent control over film deposition conditions, film thickness, and substrate chemistry. Here we demonstrate independent tuning of the crystalline polymorph and molecular orientation in thin films of contorted hexabenzocoronene, c-HBC, during post-deposition processing without the need to adjust deposition conditions. Three polymorphs are observed, two of which have not been previously reported. Using our ability to independently tune the crystal structure and out-of-plane molecular orientation in thin films of c-HBC, we have decoupled and evaluated the effects that molecular packing and orientation have on device performance in thin-film transistors (TFTs). In the case of TFTs comprising c-HBC, polymorphism and molecular orientation are equally important; independently changing either one affects the field-effect mobility by an order of magnitude.

  1. Conceptual designs of conduction cooled MgB2 magnets for 1.5 and 3.0T full body MRI systems

    Science.gov (United States)

    Baig, Tanvir; Al Amin, Abdullah; Deissler, Robert J; Sabri, Laith; Poole, Charles; Brown, Robert W; Tomsic, Michael; Doll, David; Rindfleisch, Matthew; Peng, Xuan; Mendris, Robert; Akkus, Ozan; Sumption, Michael; Martens, Michael

    2017-01-01

    Conceptual designs of 1.5 and 3.0 T full-body magnetic resonance imaging (MRI) magnets using conduction cooled MgB2 superconductor are presented. The sizes, locations, and number of turns in the eight coil bundles are determined using optimization methods that minimize the amount of superconducting wire and produce magnetic fields with an inhomogeneity of less than 10 ppm over a 45 cm diameter spherical volume. MgB2 superconducting wire is assessed in terms of the transport, thermal, and mechanical properties for these magnet designs. Careful calculations of the normal zone propagation velocity and minimum quench energies provide support for the necessity of active quench protection instead of passive protection for medium temperature superconductors such as MgB2. A new ‘active’ protection scheme for medium Tc based MRI magnets is presented and simulations demonstrate that the magnet can be protected. Recent progress on persistent joints for multifilamentary MgB2 wire is presented. Finite difference calculations of the quench propagation and temperature rise during a quench conclude that active intervention is needed to reduce the temperature rise in the coil bundles and prevent damage to the superconductor. Comprehensive multiphysics and multiscale analytical and finite element analysis of the mechanical stress and strain in the MgB2 wire and epoxy for these designs are presented for the first time. From mechanical and thermal analysis of our designs we conclude there would be no damage to such a magnet during the manufacturing or operating stages, and that the magnet would survive various quench scenarios. This comprehensive set of magnet design considerations and analyses demonstrate the overall viability of 1.5 and 3.0 T MgB2 magnet designs. PMID:29170604

  2. Thin film with oriented cracks on a flexible substrate

    Science.gov (United States)

    Feng, Bao; McGilvray, Andrew; Shi, Bo

    2010-07-27

    A thermoelectric film is disclosed. The thermoelectric film includes a substrate that is substantially electrically non-conductive and flexible and a thermoelectric material that is deposited on at least one surface of the substrate. The thermoelectric film also includes multiple cracks oriented in a predetermined direction.

  3. Oriented Y-typehexagonal ferrite thin films prepared by chemical

    Czech Academy of Sciences Publication Activity Database

    Buršík, Josef; Kužel, R.; Knížek, Karel; Drbohlav, Ivo

    2013-01-01

    Roč. 203, JULY (2013), s. 100-105 ISSN 0022-4596 R&D Projects: GA ČR GA13-03708S Institutional support: RVO:61388980 ; RVO:68378271 Keywords : Y-type hexagonal ferrites * chemical solution deposition * thin films * epitaxial growth Subject RIV: CA - Inorganic Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 2.200, year: 2013

  4. Effect of sorbic acid doping on flux pinning in bulk MgB2 with the percolation model

    International Nuclear Information System (INIS)

    Yang, Y.; Cheng, C.H.; Wang, L.; Sun, H.H.; Zhao, Y.

    2010-01-01

    In this paper, we study the doping effect of sorbic acid (C 6 H 8 O 2 ), from 0 to 20 wt.% of the total MgB 2 , on critical temperature (T c ), critical current density (J c ), irreversibility field (H irr ) and crystalline structure. The XRD patterns of samples show a slightly decrease in a-axis lattice parameter for doped samples, due to the partial substitution of carbon at boron site. On the other hand, we investigate the influence of doping on the behavior of flux pinning and J c (B) in the framework of percolation theory and it is found that the J c (B) behavior could be well fitted in high field region. The two key parameters, anisotropy and percolation threshold, play very important roles. It is believed that the enhancement of J c is due to the reduction of anisotropy in high field region.

  5. Ripple Field AC Losses in 10-MW Wind Turbine Generators With a MgB2 Superconducting Field Winding

    DEFF Research Database (Denmark)

    Liu, Dong; Polinder, Henk; Magnusson, Niklas

    2016-01-01

    Superconducting (SC) synchronous generators are proposed as a promising candidate for 10-20-MW direct-drive wind turbines because they can have low weights and small sizes. A common way of designing an SC machine is to use SC wires with high current-carrying capability in the dc field winding...... and the ac armature winding is made with copper conductors. In such generators, the dc field winding is exposed to ac magnetic field ripples due to space harmonics from the armature. In generator design phases, the ac loss caused by these ripple fields needs to be evaluated to avoid local overheating...... and an excessive cooling budget. To determine the applicability of different design solutions in terms of ac losses, this paper estimates the ac loss level of 10-MW wind generator designs employing a MgB2 SC field winding. The effects on ac losses are compared between nonmagnetic and ferromagnetic teeth...

  6. Enhancement of the irreversibility field in bulk MgB2 by TiO2 nanoparticle addition

    DEFF Research Database (Denmark)

    Xu, G.J.; Grivel, Jean-Claude; Abrahamsen, A.B.

    2004-01-01

    MgB2 samples doped with TiO2 nanoparticles were prepared and the effect of TiO2 addition on the superconducting transition temperature (T-c), irreversibility field (H-irr) and critical current density (J(c)) were investigated. It is found that the hexagonal lattice parameters a and c decrease...... with TiO2 doping. Tc decreases gradually from 38.2 to 37.8 K as the TiO2 content increases from 0 to 15 wt%. The H-irr increases at 20 K from 4.3 to 4.9 T as the TiO2 content increases from 0 to 10 wt%, and at the same temperature J(c) increases from 450 to 4250 A/cm(2) at 4.2 T. (C) 2004 Published...

  7. The road to magnesium diboride thin films, Josephson junctions and SQUIDs

    International Nuclear Information System (INIS)

    Brinkman, Alexander; Mijatovic, Dragana; Hilgenkamp, Hans; Rijnders, Guus; Oomen, Ingrid; Veldhuis, Dick; Roesthuis, Frank; Rogalla, Horst; Blank, Dave H A

    2003-01-01

    The remarkably high critical temperature at which magnesium diboride (MgB 2 ) undergoes transition to the superconducting state, T c ∼ 40 K, has aroused great interest and has encouraged many groups to explore the properties and application potential of this novel superconductor. For many electronic applications and further basic studies, the availability of superconducting thin films is of great importance. Several groups have succeeded in fabricating superconducting MgB 2 films. An overview of the deposition techniques for MgB 2 thin film growth will be given, with a special focus on the in situ two-step process. Although, meanwhile, many problems to obtain suitable films have been solved, such as oxygen impurities and magnesium volatility, the question of how single-phase epitaxial films can be grown still remains. The possibility of growing single-crystalline epitaxial films will be discussed from the deposition conditions' point of view as well as substrate choice. Necessary conditions are discussed and possible routes are reviewed. The applicability of MgB 2 in superconducting electronic devices depends on the possibility of making well-controlled, i.e., reproducible and stable, Josephson junctions. The first attempts to make MgB 2 -MgO-MgB 2 ramp-type junctions and SQUIDs from MgB 2 nanobridges are discussed

  8. Stress/strain characteristics of Cu alloy sheath in situ processed MgB2 superconducting wires

    International Nuclear Information System (INIS)

    Katagiri, Kazumune; Kasaba, Koichi; Shoji, Yoshitaka

    2005-01-01

    The mechanical properties of copper and copper alloy (Cu-Zr, Cu-Be and Cu-Cr) sheath in situ PIT-processed MgB 2 superconducting wires were studied at room temperature (RT) and 4.2 K. The effects of stress-strain on the critical current (I c ) of the wires have also been studied at 4.2 K and in magnetic fields up to 5 T. It has been clarified that alloying the Cu sheath significantly increases the yield and flow stresses of the wires at both RT and 4.2 K. The 0.5% flow stresses of the Cu alloy sheath wire were 147-237 MPa, whereas that of Cu was 55 MPa. At RT, serration corresponding to multiple cracking was observed around a strain of 0.4% and the stress-strain curves saturated beyond that point. The strain dependence of I c prior to the critical strain (ε irr ) was different depending on the magnetic field; being almost constant at 2 T and increasing with strain at 5 T. The I c decreased beyond ε irr , which is much larger for Cu alloy sheath wires as compared to Cu sheath wire. This is due to the difference in the residual compressive strain in the MgB 2 core during cooling from the heat-treatment temperature to 4.2 K, which is determined through relaxation by yielding in the sheath materials. The transverse compression tests revealed that the I c of the Cu alloy sheath wire did not degrade up to 314 MPa, which is also higher than that of Cu sheath wire. (author)

  9. Estimation of hysteretic losses for MgB2 tapes under the operating conditions of a generator

    International Nuclear Information System (INIS)

    Vargas-Llanos, Carlos Roberto; Zermeño, Víctor M R; Grilli, Francesco; Sanz, Santiago; Trillaud, Frederic

    2016-01-01

    Hysteretic losses in the MgB 2 wound superconducting coils of a 550 kW synchronous hybrid scaled generator were estimated as part of the European project SUPRAPOWER led by the Spanish Fundación Tecnalia Research and Innovation. Particular interest was given to the losses caused by the magnetic flux ripples in the rotor coils originating from the conventional stator during nominal operation. To compute these losses, a 2D finite element analysis was conducted and Maxwell’s equations written in the H-formulation were solved considering the nonlinear material properties of the conductor materials. The modeled tapes are made of multiple MgB 2 filaments embedded in a Ni matrix and soldered to a high purity copper strip and insulated with Dacron braid. Three geometrical models of single tape cross sections of decreasing complexity were studied: (1) the first model reproduced closely the actual cross section obtained from tape micrographs. (2) The second model was obtained from the computed elasto-plastic deformation of a round Ni wire. (3) The third model was based on a simplified cross section with the superconducting filaments bundled in a single elliptical bulky structure. The last geometry allowed the validation of the modeling technique by comparing numerical losses with results from well-established analytical expressions. Additionally, the following cases of filament transpositions of the multi-filamentary tape were studied: no transposition, partial and full transposition; thereby improving understanding of the relevance of the tape fabrication process on the magnitude of the determination of ac losses. Finally, choosing the right level of geometrical detail, the following operational regimes of the machine and its impact on individual superconducting tape losses in the rotor were studied: bias-dc current, ramping current under ramping background field and magnetic flux ripples under dc background current and field. (paper)

  10. Estimation of hysteretic losses for MgB2 tapes under the operating conditions of a generator

    Science.gov (United States)

    Vargas-Llanos, Carlos Roberto; Zermeño, Víctor M. R.; Sanz, Santiago; Trillaud, Frederic; Grilli, Francesco

    2016-03-01

    Hysteretic losses in the MgB2 wound superconducting coils of a 550 kW synchronous hybrid scaled generator were estimated as part of the European project SUPRAPOWER led by the Spanish Fundación Tecnalia Research & Innovation. Particular interest was given to the losses caused by the magnetic flux ripples in the rotor coils originating from the conventional stator during nominal operation. To compute these losses, a 2D finite element analysis was conducted and Maxwell’s equations written in the H-formulation were solved considering the nonlinear material properties of the conductor materials. The modeled tapes are made of multiple MgB2 filaments embedded in a Ni matrix and soldered to a high purity copper strip and insulated with Dacron braid. Three geometrical models of single tape cross sections of decreasing complexity were studied: (1) the first model reproduced closely the actual cross section obtained from tape micrographs. (2) The second model was obtained from the computed elasto-plastic deformation of a round Ni wire. (3) The third model was based on a simplified cross section with the superconducting filaments bundled in a single elliptical bulky structure. The last geometry allowed the validation of the modeling technique by comparing numerical losses with results from well-established analytical expressions. Additionally, the following cases of filament transpositions of the multi-filamentary tape were studied: no transposition, partial and full transposition; thereby improving understanding of the relevance of the tape fabrication process on the magnitude of the determination of ac losses. Finally, choosing the right level of geometrical detail, the following operational regimes of the machine and its impact on individual superconducting tape losses in the rotor were studied: bias-dc current, ramping current under ramping background field and magnetic flux ripples under dc background current and field.

  11. The fictional transition of the preferential orientation of yttria-stabilized zirconia thin films

    International Nuclear Information System (INIS)

    Lamas, J.S.; Leroy, W.P.; Depla, D.

    2012-01-01

    The fundamental study of the microstructural and textural evolution of yttria-stabilized zirconia (YSZ) thin films is of great importance given that the crystallographic properties are intimately related to their extrinsic or functional properties. In order to study these properties, YSZ thin films were obtained using dual magnetron sputtering. The results of a polar plot graph, based on X-ray diffraction (XRD) data, seem to indicate a transition from [200] out-of-plane preferential orientation to [111], indicating a dependence on composition and yttrium target–substrate (Y T–S) distance at low pressure. However, no transition is identified at high pressure, showing only [111] out-of-plane orientation, independent of composition and Y T–S distance. Scanning electron microscopy (SEM) indicates a tilt in the columnar structure of the film but no other microstructural change is in evidence, possibly related to the growth transition from [200] to [111]. Pole figures were used to clarify the texture transition in the YSZ thin films. These results indicate that there is indeed no transition in the preferential orientation of the films from [200] to [111] but a tilt of the [200] orientation towards the zirconium source. Detailed study using pole figures and SEM, clearly indicated that no growth zone transition was present and the effect is caused by geometrical configuration, contradicting expectations from standard θ/2θ XRD measurements. - Highlights: ► Study of the preferential orientation of Yttria-stabilized zirconia thin films ► Comparison of the preferential orientation at two different chamber pressures ► Correlation with the energy per adparticle and the extended structure zone model ► Use of pole figures analyses to clarify the change in the preferential orientation

  12. The fictional transition of the preferential orientation of yttria-stabilized zirconia thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lamas, J.S., E-mail: Jerika.Lamas@UGent.be; Leroy, W.P.; Depla, D.

    2012-12-15

    The fundamental study of the microstructural and textural evolution of yttria-stabilized zirconia (YSZ) thin films is of great importance given that the crystallographic properties are intimately related to their extrinsic or functional properties. In order to study these properties, YSZ thin films were obtained using dual magnetron sputtering. The results of a polar plot graph, based on X-ray diffraction (XRD) data, seem to indicate a transition from [200] out-of-plane preferential orientation to [111], indicating a dependence on composition and yttrium target-substrate (Y T-S) distance at low pressure. However, no transition is identified at high pressure, showing only [111] out-of-plane orientation, independent of composition and Y T-S distance. Scanning electron microscopy (SEM) indicates a tilt in the columnar structure of the film but no other microstructural change is in evidence, possibly related to the growth transition from [200] to [111]. Pole figures were used to clarify the texture transition in the YSZ thin films. These results indicate that there is indeed no transition in the preferential orientation of the films from [200] to [111] but a tilt of the [200] orientation towards the zirconium source. Detailed study using pole figures and SEM, clearly indicated that no growth zone transition was present and the effect is caused by geometrical configuration, contradicting expectations from standard {theta}/2{theta} XRD measurements. - Highlights: Black-Right-Pointing-Pointer Study of the preferential orientation of Yttria-stabilized zirconia thin films Black-Right-Pointing-Pointer Comparison of the preferential orientation at two different chamber pressures Black-Right-Pointing-Pointer Correlation with the energy per adparticle and the extended structure zone model Black-Right-Pointing-Pointer Use of pole figures analyses to clarify the change in the preferential orientation.

  13. Synthesis of c-axis oriented AlN thin films on different substrates: A review

    International Nuclear Information System (INIS)

    Iriarte, G.F.; Rodriguez, J.G.; Calle, F.

    2010-01-01

    Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N 2 gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

  14. Influence of the cooling rate on the main factors affecting current-carrying ability in pure and SiC-doped MgB2 superconductors

    International Nuclear Information System (INIS)

    Shcherbakova, O V; Pan, A V; Soltanian, S; Dou, S X; Wexler, D

    2007-01-01

    We have systematically studied and compared the effect of cooling rate on microstructure, critical current density, upper critical field and irreversibility field in pure and 10 wt% SiC-added MgB 2 superconductors. The sintering process was carried out on the samples at a temperature of 750 deg. C for 1 h followed by quenching or cooling to room temperature in 0.3 h (2433 deg. C h -1 ), 14 h (52 deg. C h -1 ) and 25 h (30 deg. C h -1 ). Changes in the microstructure due to variations in cooling rate have been studied with the help of scanning and transmission electron microscopy. Correlations between microstructure and superconducting properties have been observed, identified and explained for both pure and SiC-added MgB 2 samples. Modifications to the pinning environment and grain boundary transparency are considered to be responsible for variations in the current-carrying ability. The dominant pinning on grain boundaries in the pure MgB 2 samples and on nano-inclusions (inducing accompanying defects) in the SiC-doped samples is clearly distinguished. On the basis of our experimental results, we have concluded that the cooling rate can be an important parameter influencing the superconducting properties of MgB 2 samples

  15. Numerical simulation of quench protection for a 1.5 T persistent mode MgB2 conduction-cooled MRI magnet

    Science.gov (United States)

    Deissler, Robert J.; Baig, Tanvir; Poole, Charles; Amin, Abdullah; Doll, David; Tomsic, Michael; Martens, Michael

    2017-02-01

    The active quench protection of a 1.5 T MgB2 conduction-cooled MRI magnet operating in persistent current mode is considered. An active quench protection system relies on the detection of the resistive voltage developed in the magnet, which is used to trigger the external energizing of quench heaters located on the surfaces of all ten coil bundles. A numerical integration of the heat equation is used to determine the development of the temperature profile and the maximum temperature in the coil at the origin, or ‘hot spot’, of the quench. Both n-value of the superconductor and magnetoresistance of the wire are included in the simulations. An MgB2 wire manufactured by Hyper Tech Research, Inc. was used as the basis to model the wire for the simulations. With the proposed active quench protection system, the maximum temperature was limited to 200 K or less, which is considered low enough to prevent damage to the magnet. By substituting Glidcop for the Monel in the wire sheath or by increasing the thermal conductivity of the insulation, the margin for safe operation was further increased, the maximum temperature decreasing by more than 40 K. The strain on the MgB2 filaments is calculated using ANSYS, verifying that the stress and strain limits in the MgB2 superconductor and epoxy insulation are not exceeded.

  16. Transport properties and exponential n-values of Fe/MgB2 tapes with various MgB2 particle sizes

    International Nuclear Information System (INIS)

    Lezza, P.; Abaecherli, V.; Clayton, N.; Senatore, C.; Uglietti, D.; Suo, H.L.; Fluekiger, R.

    2004-01-01

    Fe/MgB 2 tapes have been prepared starting with pre-reacted binary MgB 2 powders. As shown by resistive and inductive measurements, the reduction of particle size to a few microns by ball milling has little influence on B c2 , while the superconducting properties of the individual MgB 2 grains are essentially unchanged. Reducing the particle size causes an enhancement of B irr from 14 to 16 T, while J c has considerably increased at high fields, its slope J c (B) being reduced. At 4.2 K, values of 5.3 x 10 4 and 1.2 x 10 3 A/cm 2 were measured at 3.5 and 10 T, respectively, suggesting a dominant role of the conditions at the grain interfaces. A systematic variation of these conditions at the interfaces is undertaken in order to determine the limit of transport properties for Fe/MgB 2 tapes. The addition of 5% Mg to MgB 2 powder was found to affect neither J c nor B c2 . For the tapes with the highest J c values, very high exponential n factors were measured: n=148, 89 and 17 at 3.5, 5 and 10 T, respectively and measurements of critical current versus applied strain have been performed. The mechanism leading to high transport critical current densities of filamentary Fe/MgB 2 tapes based on MgB 2 particles is discussed

  17. Micro-orientation control of silicon polymer thin films on graphite surfaces modified by heteroatom doping

    Energy Technology Data Exchange (ETDEWEB)

    Shimoyama, Iwao, E-mail: shimoyama.iwao@jaea.go.jp [Material Science Research Center, Atomic Energy Agency, Tokai-mura 2-4, Naka-gun, Ibaraki 319-1195 (Japan); Baba, Yuji [Fukushima Administrative Department, Atomic Energy Agency, Tokai-mura 2-4, Naka-gun, Ibaraki 319-1195 (Japan); Hirao, Norie [Material Science Research Center, Atomic Energy Agency, Tokai-mura 2-4, Naka-gun, Ibaraki 319-1195 (Japan)

    2017-05-31

    Highlights: • Micro-orientation control method for organic polysilane thin films is proposed. • This method utilizes surface modification of graphite using heteroatom doping. • Lying, standing, and random orientations can be freely controlled by this method. • Micro-pattering of a polysilane film with controlled orientations is achieved. - Abstract: Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy is applied to study orientation structures of polydimethylsilane (PDMS) films deposited on heteroatom-doped graphite substrates prepared by ion beam doping. The Si K-edge NEXAFS spectra of PDMS show opposite trends of polarization dependence for non irradiated and N{sub 2}{sup +}-irradiated substrates, and show no polarization dependence for an Ar{sup +}-irradiated substrate. Based on a theoretical interpretation of the NEXAFS spectra via first-principles calculations, we clarify that PDMS films have lying, standing, and random orientations on the non irradiated, N{sub 2}{sup +}-irradiated, and Ar{sup +}-irradiated substrates, respectively. Furthermore, photoemission electron microscopy indicates that the orientation of a PDMS film can be controlled with microstructures on the order of μm by separating irradiated and non irradiated areas on the graphite surface. These results suggest that surface modification of graphite using ion beam doping is useful for micro-orientation control of organic thin films.

  18. Highly oriented thin films of a substituted oligo(para-phenylenevinylene) on friction-transferred PTFE substrates

    NARCIS (Netherlands)

    Gill, R.E; Hadziioannou, G; Lang, P.; Garnier, F.; Wittmann, J.C.

    Communication: Highly oriented thin films of oligo(p-phenylenevinylene)s, oligoPPVs, provide information about the structure of polyPPV and structure-property relationships. It is shown that deposition of a substituted oligoPPV onto highly preoriented PTFE substrates leads to highly oriented thin

  19. Optical properties of the c-axis oriented LiNbO{sub 3} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Shandilya, Swati; Sharma, Anjali [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Miranda House, University of Delhi, Delhi 110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2012-01-01

    C-axis oriented Lithium Niobate (LiNbO{sub 3}) thin films have been deposited onto epitaxially matched (001) sapphire substrate using pulsed laser deposition technique. Structural and optical properties of the thin films have been studied using the X-ray diffraction (XRD) and UV-Visible spectroscopy respectively. Raman spectroscopy has been used to study the optical phonon modes and defects in the c-axis oriented LiNbO{sub 3} thin films. XRD analysis indicates the presence of stress in the as-grown LiNbO{sub 3} thin films and is attributed to the small lattice mismatch between LiNbO{sub 3} and sapphire. Refractive index (n = 2.13 at 640 nm) of the (006) LiNbO{sub 3} thin films was found to be slightly lower from the corresponding bulk value (n = 2.28). Various factors responsible for the deviation in the refractive index of (006) LiNbO{sub 3} thin films from the corresponding bulk value are discussed and the deviation is mainly attributed to the lattice contraction due to the presence of stress in deposited film.

  20. Optical properties of the c-axis oriented LiNbO3 thin film

    International Nuclear Information System (INIS)

    Shandilya, Swati; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

    2012-01-01

    C-axis oriented Lithium Niobate (LiNbO 3 ) thin films have been deposited onto epitaxially matched (001) sapphire substrate using pulsed laser deposition technique. Structural and optical properties of the thin films have been studied using the X-ray diffraction (XRD) and UV–Visible spectroscopy respectively. Raman spectroscopy has been used to study the optical phonon modes and defects in the c-axis oriented LiNbO 3 thin films. XRD analysis indicates the presence of stress in the as-grown LiNbO 3 thin films and is attributed to the small lattice mismatch between LiNbO 3 and sapphire. Refractive index (n = 2.13 at 640 nm) of the (006) LiNbO 3 thin films was found to be slightly lower from the corresponding bulk value (n = 2.28). Various factors responsible for the deviation in the refractive index of (006) LiNbO 3 thin films from the corresponding bulk value are discussed and the deviation is mainly attributed to the lattice contraction due to the presence of stress in deposited film.

  1. Influence of particle size of Mg powder on the microstructure and critical currents of in situ powder-in-tube processed MgB_2 wires

    International Nuclear Information System (INIS)

    Kumakura, Hiroaki; Ye, Shujun; Matsumoto, Akiyoshi; Nitta, Ryuji

    2016-01-01

    We fabricated in situ powder-in-tube(PIT) MgB_2 wires using three kinds of Mg powders with particle size of ∼45 μm, ∼150 μm and 212∼600 μm. Mg particles were elongated to filamentary structure in the wires during cold drawing process. Especially, long Mg filamentary structure was obtained for large Mg particle size of 212∼600 μm. Critical current density, J_c, increased with increasing Mg particle size for 1 mm diameter wires. This is due to the development of filamentary structure of high density MgB_2 superconducting layer along the wires. This MgB_2 structure is similar to that of the internal Mg diffusion (IMD) processed MgB_2 wires. However, J_c of the wires fabricated with 212∼600 μm Mg particle size decreased and the scattering of J_c increased with decreasing wire diameter, while the J_c of the wires with ∼45 μm Mg particle was almost independent of the wire diameter. The cross sectional area reduction of the Mg particles during the wire drawing is smaller than that of the wire. When using large size Mg particle, the number of Mg filaments in the wire cross section is small. These two facts statistically lead to the larger scattering of Mg areal fraction in the wire cross section with proceeding of wire drawing process, resulting in smaller volume fraction of MgB_2 in the wire and lower J_c with larger scattering along the wire. SiC nano powder addition is effective in increasing J_c for all Mg particle sizes. (author)

  2. Ball-milling and AlB2 addition effects on the hydrogen sorption properties of the CaH2 + MgB2 system

    International Nuclear Information System (INIS)

    Schiavo, B.; Girella, A.; Agresti, F.; Capurso, G.; Milanese, C.

    2011-01-01

    Research highlights: → Calcium hydride + magnesium-aluminum borides as candidates for hydrogen storage. → Long time ball milling improves hydrogen sorption kinetics of the CaH 2 +MgB 2 system. → Coexistence of MgB 2 and AlB 2 does not improve hydrogen sorption performances. → Total substitution of MgB 2 with AlB 2 improves the system kinetics and reversibility. → Below 400 deg. C almost the full hydrogen capacity of the CaH 2 + AlB 2 system is reached. - Abstract: Among the borohydrides proposed for solid state hydrogen storage, Ca(BH 4 ) 2 is particularly interesting because of its favourable thermodynamics and relatively cheap price. Composite systems, where other species are present in addition to the borohydride, show some advantages in hydrogen sorption properties with respect to the borohydrides alone, despite a reduction of the theoretical storage capacity. We have investigated the milling time influence on the sorption properties of the CaH 2 + MgB 2 system from which Ca(BH 4 ) 2 and MgH 2 can be synthesized by hydrogen absorption process. Manometric and calorimetric measurements showed better kinetics for long time milled samples. We found that the total substitution of MgB 2 with AlB 2 in the starting material can improve the sorption properties significantly, while the co-existence of both magnesium and aluminum borides in the starting mixture did not cause any improvement. Rietveld refinements of the X-ray powder diffraction spectra were used to confirm the hypothesized reactions.

  3. Critical current density in MgB2 bulk samples after co-doping with nano-SiC and poly zinc acrylate complexes

    International Nuclear Information System (INIS)

    Zhang, Z.; Suo, H.; Ma, L.; Zhang, T.; Liu, M.; Zhou, M.

    2011-01-01

    SiC and poly zinc acrylate complexes co-doped MgB 2 bulk has been synthesized. Co-doping can cause higher carbon substitutions and the second phase particles. Co-doping can further increase the Jc value of MgB 2 bulk on the base of the SiC doping. The co-doped MgB 2 bulk samples have been synthesized using an in situ reaction processing. The additives is 8 wt.% SiC nano powders and 10 wt.% [(CH 2 CHCOO) 2 Zn] n poly zinc acrylate complexes (PZA). A systematic study was performed on samples doped with SiC or PZA and samples co-doped with both of them. The effects of doping and co-doping on phase formation, microstructure, and the variation of lattice parameters were studied. The amount of substituted carbon, the critical temperature (T c ) and the critical current density (J c ) were determined. The calculated lattice parameters show the decrease of the a-axis, while no obvious change was detected for c-axis parameter in co-doped samples. This indicates that the carbon was substituted by boron in MgB 2 . The amount of substituted carbon for the co-doped sample shows an enhancement compared to that of the both single doped samples. The co-doped samples perform the highest J c values, which reaches 3.3 x 10 4 A/cm 2 at 5 K and 7 T. It is shown that co-doping with SiC and organic compound is an effective way to further improve the superconducting properties of MgB 2 .

  4. Raman scattering, electrical and optical properties of fluorine-doped tin oxide thin films with (200) and (301) preferred orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang-Yeoul, E-mail: cykim15@kicet.re.kr [Nano-Convergence Intelligence Material Team, Korea Institute of Ceramic Eng. and Tech., Gasan-digtial-ro 10 Gil 77 Geumcheon-gu, 153-801 Seoul (Korea, Republic of); Riu, Doh-Hyung [Dept. of New Material Sci. and Eng., Seoul National University of Technology, Seoul (Korea, Republic of)

    2014-12-15

    (200) and (301) preferred oriented fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added and water-based FTO precursor solutions, respectively. (200) oriented FTO thin film from ethanol-added solution shows the lower electrical resistivity and visible light transmission than (301) preferred thin film from water-based solution. It is due to the higher carrier concentration and electron mobility in (200) oriented crystals, that is, the lower ionized impurity scattering. The higher electron concentration is related to the higher optical band gap energy, the lower visible light transmission, and the higher IR reflection. For (301) preferred FTO thin films from water-based solution, the lower carrier concentration and electron mobility make the higher electrical resistivity and visible light transmission. Raman scattering analysis shows that IR active modes prominent in (200) oriented FTO thin film are related with the lower electrical resistivity. - Highlights: • We coated fluorine-doped tin oxide thin films with preferred orientation of (200) and (301). • We examine changes in the level of electrical and optical properties with the orientation. • (200) preferred orientation showed lower electrical resistivity and optical transmittance. • (200) oriented thin films have higher electron concentrations that are related with IR active modes.

  5. Effects of Cold Rolling Reduction and Initial Goss Grains Orientation on Texture Evolution and Magnetic Performance of Ultra-thin Grain-oriented Silicon Steel

    Directory of Open Access Journals (Sweden)

    LIANG Rui-yang

    2017-06-01

    Full Text Available The ultra-thin grain-oriented silicon steel strips with a thickness of 0.06-0.12mm were produced by one-step-rolling methods with different Goss-orientation of grain-oriented silicon steel sheets. The effect of cold rolling reduction and initial Goss-orientation of samples on texture evolution and magnetic performance of ultra-thin grain-oriented silicon steel strips was studied by EBSD. The result shows that with the increase of cold rolling reduction and decrease of strips thickness, the recrystallization texture is enhanced after annealing.When the cold rolling reduction is 70%,RD//〈001〉 recrystallization texture is the sharpest, and the magnetic performance is the best. The higher degree of Goss orientation in initial sample is, the better magnetic performance of ultra-thin grain-oriented silicon steel.Therefore, for producing an ultra-thin grain-oriented silicon steel with high performance, a material with a concentrated orientation of Goss grains can be used.

  6. Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

    2008-08-18

    We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

  7. Cyclic Solvent Vapor Annealing for Rapid, Robust Vertical Orientation of Features in BCP Thin Films

    Science.gov (United States)

    Paradiso, Sean; Delaney, Kris; Fredrickson, Glenn

    2015-03-01

    Methods for reliably controlling block copolymer self assembly have seen much attention over the past decade as new applications for nanostructured thin films emerge in the fields of nanopatterning and lithography. While solvent assisted annealing techniques are established as flexible and simple methods for achieving long range order, solvent annealing alone exhibits a very weak thermodynamic driving force for vertically orienting domains with respect to the free surface. To address the desire for oriented features, we have investigated a cyclic solvent vapor annealing (CSVA) approach that combines the mobility benefits of solvent annealing with selective stress experienced by structures oriented parallel to the free surface as the film is repeatedly swollen with solvent and dried. Using dynamical self-consistent field theory (DSCFT) calculations, we establish the conditions under which the method significantly outperforms both static and cyclic thermal annealing and implicate the orientation selection as a consequence of the swelling/deswelling process. Our results suggest that CSVA may prove to be a potent method for the rapid formation of highly ordered, vertically oriented features in block copolymer thin films.

  8. Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Maw-Shung Lee

    2014-01-01

    Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

  9. Decay of orientational grating of weakly confined excitons in GaAs thin films

    International Nuclear Information System (INIS)

    Kojima, O.; Isu, T.; Ishi-Hayase, J.; Kanno, A.; Katouf, R.; Sasaki, M.; Tsuchiya, M.

    2008-01-01

    We report the dynamical properties of the exciton orientation in GaAs thin films using the orientational grating (OG) technique. From the results of excitation-power dependence of OG signal, we confirmed that the OG signal comes from the optical nonlinearity of weakly confined excitons. In addition, the OG-decay time decreases with an increase of excitation power due to exciton-exciton interaction, and the shortest decay time is below 1 ps. Our results may imply the potential application of optical nonlinearity of weakly confined exciton to ultrafast switching devices operating at 1 Tbit/s

  10. Critical state instability in Nb-clad MgB2 superconducting wires

    International Nuclear Information System (INIS)

    Beilin, V.; Felner, I.; Tsindlekht, M.I.; Dul'kin, E.; Mojaev, E.; Roth, M.

    2008-01-01

    Magnetization hysteresis loops of Cu/MgB 2 , Nb/MgB 2 , Cu/Nb/MgB 2 and Fe/Cu/MgB 2 wires in parallel magnetic fields of up to 5 T were studied in the temperature range from 5 to 35 K. All Nb-clad samples exhibited a thermomagnetic instability (TMI) in the form of magnetization jumps. In a thick wire (about 2 mm in core diameter), the TMI persisted up to the unexpectedly high temperature of 32 K. Thin wires showed low TMI which vanished at T > 10 K. Cu/MgB 2 wires which did not contain a Nb barrier, showed no signs of TMI. The TMI in thin wires exhibited good reproducibility and stability in the jump pattern (JP) (jump amplitudes and positions), while thick wires showed the worst time stability. We found that moderate flat rolling of the round unstable Cu/Nb/MgB 2 wire resulted in negligible TMI at 5 K in the processed flat tape. The TMI amplitudes of studied samples correlated with the adiabatic stability parameter, β -1

  11. Probing molecular orientations in thin films by x-ray photoelectron spectroscopy

    Science.gov (United States)

    Li, Y.; Li, P.; Lu, Z.-H.

    2018-03-01

    A great number of functional organic molecules in active thin-film layers of optoelectronic devices have highly asymmetric structures, such as plate-like, rod-like, etc. This makes molecular orientation an important aspect in thin-films as it can significantly affect both the optical and electrical performance of optoelectronic devices. With a combination of in-situ ultra violet photoelectron spectroscopy (UPS) and x-ray photoelectron spectroscopy (XPS) investigations for organic molecules having a broad range of structural properties, we discovered a rigid connection of core levels and frontier highest occupied molecular orbital levels at organic interfaces. This finding opens up opportunities of using X-ray photoemission spectroscopy as an alternative tool to UPS for providing an easy and unambiguous data interpretation in probing molecular orientations.

  12. Probing molecular orientations in thin films by x-ray photoelectron spectroscopy

    Directory of Open Access Journals (Sweden)

    Y. Li

    2018-03-01

    Full Text Available A great number of functional organic molecules in active thin-film layers of optoelectronic devices have highly asymmetric structures, such as plate-like, rod-like, etc. This makes molecular orientation an important aspect in thin-films as it can significantly affect both the optical and electrical performance of optoelectronic devices. With a combination of in-situ ultra violet photoelectron spectroscopy (UPS and x-ray photoelectron spectroscopy (XPS investigations for organic molecules having a broad range of structural properties, we discovered a rigid connection of core levels and frontier highest occupied molecular orbital levels at organic interfaces. This finding opens up opportunities of using X-ray photoemission spectroscopy as an alternative tool to UPS for providing an easy and unambiguous data interpretation in probing molecular orientations.

  13. Temperature dependent optical properties of (002) oriented ZnO thin film using surface plasmon resonance

    Science.gov (United States)

    Saha, Shibu; Mehan, Navina; Sreenivas, K.; Gupta, Vinay

    2009-08-01

    Temperature dependent optical properties of c-axis oriented ZnO thin film were investigated using surface plasmon resonance (SPR) technique. SPR data for double layer (prism-Au-ZnO-air) and single layer (prism-Au-air) systems were taken over a temperature range (300-525 K). Dielectric constant at optical frequency and real part of refractive index of the ZnO film shows an increase with temperature. The bandgap of the oriented ZnO film was found to decrease with rise in temperature. The work indicates a promising application of the system as a temperature sensor and highlights an efficient scientific tool to study optical properties of thin film under varying ambient conditions.

  14. Unique Crystal Orientation of Poly(ethylene oxide) Thin Films by Crystallization Using a Thermal Gradient

    DEFF Research Database (Denmark)

    Gbabode, Gabin; Delvaux, Maxime; Schweicher, Guillaume

    2017-01-01

    Poly(ethylene oxide), (PEO), thin films of different thicknesses (220, 450, and 1500 nm) and molecular masses (4000, 8000, and 20000 g/mol) have been fabricated by spin-coating of methanol solutions onto glass substrates. All these samples have been recrystallized from the melt using a directional......, to significantly decrease the distribution of crystal orientation obtained after crystallization using the thermal gradient technique....

  15. Effect of La doping on crystalline orientation, microstructure and dielectric properties of PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Wencai; Li, Qi; Wang, Xing [Dalian Univ. of Technology, Dalian (China). School of Mechanical Engineering; Yin, Zhifu [Jilin Univ., Changchun (China). Faculty of the School of Mechanical Science and Engineering; Zou, Helin [Dalian Univ. of Technology, Dalian (China). Key Lab. for Micro/Nano Systems and Technology

    2017-11-01

    Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.

  16. A Confined Fabrication of Perovskite Quantum Dots in Oriented MOF Thin Film.

    Science.gov (United States)

    Chen, Zheng; Gu, Zhi-Gang; Fu, Wen-Qiang; Wang, Fei; Zhang, Jian

    2016-10-26

    Organic-inorganic hybrid lead organohalide perovskites are inexpensive materials for high-efficiency photovoltaic solar cells, optical properties, and superior electrical conductivity. However, the fabrication of their quantum dots (QDs) with uniform ultrasmall particles is still a challenge. Here we use oriented microporous metal-organic framework (MOF) thin film prepared by liquid phase epitaxy approach as a template for CH 3 NH 3 PbI 2 X (X = Cl, Br, and I) perovskite QDs fabrication. By introducing the PbI 2 and CH 3 NH 3 X (MAX) precursors into MOF HKUST-1 (Cu 3 (BTC) 2 , BTC = 1,3,5-benzene tricarboxylate) thin film in a stepwise approach, the resulting perovskite MAPbI 2 X (X = Cl, Br, and I) QDs with uniform diameters of 1.5-2 nm match the pore size of HKUST-1. Furthermore, the photoluminescent properties and stability in the moist air of the perovskite QDs loaded HKUST-1 thin film were studied. This confined fabrication strategy demonstrates that the perovskite QDs loaded MOF thin film will be insensitive to air exposure and offers a novel means of confining the uniform size of the similar perovskite QDs according to the oriented porous MOF materials.

  17. Carbon-coated boron using low-cost naphthalene for substantial enhancement of Jc in MgB2 superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Ranot, Mahipal; Shinde, K. P.; Oh, Y. S.; Kang, S. H.; Jang, S. H.; Hwang, D. Y.; Chung, K. C. [Korea Institute of Materials Science, Changwon (Korea, Republic of)

    2017-09-15

    Carbon coating approach is used to prepare carbon-doped MgB{sub 2} bulk samples using low-cost naphthalene (C{sub 10}H{sub 8}) as a carbon source. The coating of carbon (C) on boron (B) powders was achieved by direct pyrolysis of naphthalene at 120 degrees C and then the C-coated B powders were mixed well with appropriate amount of Mg by solid state reaction method. X-ray diffraction analysis revealed that there is a noticeable shift in (100) and (110) Bragg reflections towards higher angles, while no shift was observed in (002) reflections for MgB2 doped with carbon. As compared to un-doped MgB{sub 2}, a systematic enhancement in Jc(H) properties with increasing carbon doping level was observed for naphthalene-derived C-doped MgB{sub 2} samples. The substantial enhancement in Jc is most likely due to the incorporation of C into MgB{sub 2} lattice and the reduction in crystallite size, as evidenced by the increase in the FWHM values for doped samples.

  18. Critical current density analysis of ex situ MgB2 wire by in-field and temperature Hall probe imaging

    International Nuclear Information System (INIS)

    Bartolome, E; Granados, X; Cambel, V; Fedor, J; Kovac, P; Husek, I

    2005-01-01

    The irreversible magnetic behaviour at different temperatures of an ex situ Fe-alloy/MgB 2 wire, exhibiting a granular compositional distribution, was studied using an in-field, high resolution Hall probe imaging system. Quantitative information about the local current density was obtained by solving the Biot-Savart inversion problem. The flux penetration and current distribution maps obtained can be attributed to a inhomogeneous compositional 'plum-cake-like' system, consisting of large, isolated MgB 2 agglomerations embedded in a matrix of finely distributed MgB 2 +MgO. The critical current densities within the grains and their evolution with the applied magnetic field and temperature have been obtained, and compared to the mean J c (H,T) in the matrix

  19. A Novel Method for Measurements of the Penetration Depth of MgB2 Superconductor Films by Using Sapphire Resonators with Short-Circuited Parallel Plates

    International Nuclear Information System (INIS)

    Jung, Ho Sang; Lee, J. H.; Cho, Y. H.; Lee, Sang Young; Seong, W. K.; Lee, N. H.; Kang, W. N.

    2009-01-01

    We introduce a measurement method that enables to measure the penetration depth(λ) of superconductor films by using a short-ended parallel plate sapphire resonator. Variations in the (λof MgB 2 films could be measured down to the lowest temperature using a sapphire resonator with a YBa 2 Cu 3 O 7-x film at the bottom. A model equation of λλ 0 [1-(T/T c ) τ ] -1/2 for MgB 2 films appeared to describe the observed variations of the resonant frequency of the sapphire resonator with temperature, with λ 0 , τ and T c used as the fitting parameters.

  20. de Haas-van Alphen effect investigations of the electronic structure of pure and aluminum-doped MgB2

    International Nuclear Information System (INIS)

    Carrington, A.; Yelland, E.A.; Fletcher, J.D.; Cooper, J.R.

    2007-01-01

    Our understanding of the superconducting properties of MgB 2 is strongly linked to our knowledge of its electronic structure. In this paper we review experimental measurements of the Fermi surface parameters of pure and Al-doped MgB 2 using the de Haas-van Alphen (dHvA) effect. In general, the measurements are in excellent agreement with the theoretical predictions of the electronic structure, including the strength of the electron-phonon coupling on each Fermi surface sheet. For the Al doped samples, we are able to measure how the band structure changes with doping. These results are in excellent agreement with calculations based on the virtual crystal approximation. We also review work on the dHvA effect in the superconducting state

  1. Enhancement of Critical Current Density and Flux Pinning in Acetone and La2O3 Codoped MgB2 Tapes

    International Nuclear Information System (INIS)

    Gao Zhao-Shun; Ma Yan-Wei; Wang Dong-Liang; Zhang Xian-Ping; Awaji Satoshi; Watanabe Kazuo

    2010-01-01

    MgB 2 tape samples with simultaneous additions of acetone and La 2 O 3 were prepared by an in-situ processed powder-in-tube method. Compared to the pure and single doped tapes, both transport J c and fluxing pinning are greatly improved by acetone and La 2 O 3 codoping. Acetone supplies carbon into the MgB 2 crystal lattice and increases the upper critical field, while the La 2 O 3 reacts with B to form LaB 6 nanoparticles as effective flux pining centers. The improvement of the superconducting properties in codoped tapes can be attributed to the combined effects of improvement in H c2 and flux pinning. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Control of polymer-packing orientation in thin films through synthetic tailoring of backbone coplanarity

    KAUST Repository

    Chen, Mark S.

    2013-10-22

    Controlling solid-state order of π-conjugated polymers through macromolecular design is essential for achieving high electronic device performance; yet, it remains a challenge, especially with respect to polymer-packing orientation. Our work investigates the influence of backbone coplanarity on a polymer\\'s preference to pack face-on or edge-on relative to the substrate. Isoindigo-based polymers were synthesized with increasing planarity by systematically substituting thiophenes for phenyl rings in the acceptor comonomer. This increasing backbone coplanarity, supported by density functional theory (DFT) calculations of representative trimers, leads to the narrowing of polymer band gaps as characterized by ultraviolet-visible-near infrared (UV-vis-NIR) spectroscopy and cyclic voltammetry. Among the polymers studied, regiosymmetric II and TII polymers exhibited the highest hole mobilities in organic field-effect transistors (OFETs), while in organic photovoltaics (OPVs), TBII polymers that display intermediate levels of planarity provided the highest power conversion efficiencies. Upon thin-film analysis by atomic force microscropy (AFM) and grazing-incidence X-ray diffraction (GIXD), we discovered that polymer-packing orientation could be controlled by tuning polymer planarity and solubility. Highly soluble, planar polymers favor face-on orientation in thin films while the less soluble, nonplanar polymers favor an edge-on orientation. This study advances our fundamental understanding of how polymer structure influences nanostructural order and reveals a new synthetic strategy for the design of semiconducting materials with rationally engineered solid-state properties. © 2013 American Chemical Society.

  3. Surface electronic structure and molecular orientation of poly(9-vinylcarbazole) thin film: ARUPS and NEXAFS

    CERN Document Server

    Okudaira, K K; Hasegawa, S; Ishii, H; Azuma, Y; Imamura, M; Shimada, H; Seki, K; Ueno, N

    2001-01-01

    The molecular orientation at the surfaces of poly(9-vinylcarbazole) (PvCz) thin films was studied by angle-resolved ultraviolet photoelectron spectroscopy and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The observed take-off angle (theta) dependence of photoelectron intensities from top pi band peaks clearly at larger theta than the calculated one for the three-dimensional isotropic random orientation model. The results indicate that there are more pendant groups with large tilt angles than the three-dimensional isotropic random orientation model, which is in good agreement with the result obtained from NEXAFS spectroscopy. The surface electronic states of PvCz may be rather dominated by sigma(C-H) states at the pendant carbazole group than pi states

  4. Fabrication of a Scaled MgB2 Racetrack Demonstrator Pole for a 10-MW Direct-Drive Wind Turbine Generator

    DEFF Research Database (Denmark)

    Magnusson, Niklas; Eliassen, Jan Christian; Abrahamsen, Asger Bech

    2018-01-01

    Field windings made of MgB2 wires or tapes are considered for their potential to reduce volume, weight, and cost of large offshore wind turbine generators. To gain experience of how to use this relatively new material in full-scale generators, tests of different winding methodologies and techniques...... are needed. In this paper, we describe in detail the steps used to wind a racetrack coil with a length of 1 m and a width of 0.5 m out of 4.5 km of MgB2 superconducting tape. The width corresponds to a full-scale pole of a 10-MW generator, whereas the length of the straight section is shorter than...... the corresponding full-scale pole. The coil was built up of ten double pancake coils. Each double pancake coil was wet wound using a semiautomatic winding process, where Stycast 2850 was applied directly to the MgB2 tape without any other dedicated electrical insulation. The strengths and weaknesses of the winding...

  5. Superconductivity, critical current density, and flux pinning in MgB2-x(SiC)x/2 superconductor after SiC nanoparticle doping

    Science.gov (United States)

    Dou, S. X.; Pan, A. V.; Zhou, S.; Ionescu, M.; Wang, X. L.; Horvat, J.; Liu, H. K.; Munroe, P. R.

    2003-08-01

    We investigated the effect of SiC nanoparticle doping on the crystal lattice structure, critical temperature Tc, critical current density Jc, and flux pinning in MgB2 superconductor. A series of MgB2-x(SiC)x/2 samples with x=0-1.0 were fabricated using an in situ reaction process. The contraction of the lattice and depression of Tc with increasing SiC doping level remained rather small most likely due to the counterbalancing effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intragrain defects and highly dispersed nanoinclusions within the grains which can act as effective pinning centers for vortices, improving Jc behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB2-x(SiC)x/2 superconductors.

  6. Effects of MgO impurities and micro-cracks on the critical current density of Ti-sheathed MgB2 wires

    International Nuclear Information System (INIS)

    Liang, G.; Alessandrini, M.; Yen, F.; Hanna, M.; Fang, H.; Hoyt, C.; Lv, B.; Zeng, J.; Salama, K.

    2007-01-01

    Ti-sheathed monocore MgB 2 wires with improved magnetic critical current density (J c ) have been fabricated by in situ powder-in-tube (PIT) method and characterized by magnetization, X-ray diffraction, scanning electron microscopy and electrical resistivity measurements. For the best wire, the magnetic J c values at 5 K and fields of 2 T, 5 T, and 8 T are 4.1 x 10 5 A/cm 2 , 7.8 x 10 4 A/cm 2 , and 1.4 x 10 4 A/cm 2 , respectively. At 20 K and fields of 0.5 T and 3 T, the J c values are about 3.6 x 10 5 A/cm 2 and 3.1 x 10 4 A/cm 2 , respectively, which are much higher than those of the Fe-sheathed mono-core MgB 2 wires fabricated with the same in situ PIT process and under the same fabricating conditions. It appears that the overall J c for the average Ti-sheathed wires is comparable to that of the Fe-sheathed wires. Our X-ray diffraction and scanning electron microscopy analysis indicates that J c in the Ti-sheathed MgB 2 wires can be strongly suppressed by MgO impurities and micro-cracks

  7. The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping [Tianjin University, School of Electrical and Information Engineering, Tianjin (China); Lan, Kuibo [Tianjin University, School of Microelectronics, Tianjin (China)

    2017-07-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples. (orig.)

  8. The liquid phase epitaxy method for the construction of oriented ZIF-8 thin films with controlled growth on functionalized surfaces

    KAUST Repository

    Shekhah, Osama; Eddaoudi, Mohamed

    2013-01-01

    Highly-oriented ZIF-8 thin films with controllable thickness were grown on an -OH-functionalized Au substrate using the liquid phase epitaxy method at room temperature, as evidenced by SEM and PXRD. The adsorption-desorption properties of the resulting ZIF-8 thin film were investigated for various VOCs using the QCM technique. © The Royal Society of Chemistry 2013.

  9. Purely hopping conduction in c-axis oriented LiNbO3 thin films

    Science.gov (United States)

    Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

    2009-05-01

    Dielectric constant and ac conductivity of highly c-axis oriented LiNbO3 thin film grown by pulsed laser deposition were studied in a metal-insulator-metal configuration over a wide temperature (200 to 450 K) and frequency (100 Hz to 1 MHz) range. The preferred oriented Al (1%) doped ZnO film with electrical conductivity 1.1×103 Ω-1 cm-1 was deposited for dual purpose: (1) to serve as nucleating center for LiNbO3 crystallites along preferred c-axis growth direction, and (2) to act as a suitable bottom electrode for electrical studies. The room temperature dc conductivity (σdc) of LiNbO3 film was about 5.34×10-10 Ω-1 cm-1 with activation energy ˜0.3 eV, indicating extrinsic conduction. The ac conductivity σac was found to be much higher in comparison to σdc in the low temperature region (300 K), σac shows a weak frequency dependence, whereas dielectric constant exhibits a strong frequency dispersion. The dielectric dispersion data has been discussed in the light of theoretical models based on Debye type mixed conduction and purely hopping conduction. The dominant conduction in c-axis oriented LiNbO3 thin film is attributed to the purely hopping where both σdc and σac arise due to same mechanism.

  10. Anisotropic propagation imaging of elastic waves in oriented columnar thin films

    Science.gov (United States)

    Coffy, E.; Dodane, G.; Euphrasie, S.; Mosset, A.; Vairac, P.; Martin, N.; Baida, H.; Rampnoux, J. M.; Dilhaire, S.

    2017-12-01

    We report on the observation of strongly anisotropic surface acoustic wave propagation on nanostructured thin films. Two kinds of tungsten samples were prepared by sputtering on a silicon substrate: a conventional thin film with columns normal to the substrate surface, and an oriented columnar architecture using the glancing angle deposition (GLAD) process. Pseudo-Rayleigh waves (PRWs) were imaged as a function of time in x and y directions for both films thanks to a femtosecond heterodyne pump-probe setup. A strong anisotropic propagation as well as a high velocity reduction of the PRWs were exhibited for the GLAD sample. For the wavevector k/2π  =  3  ×  105 m-1 the measured group velocities v x and v y equal 2220 m s-1 for the sample prepared with conventional sputtering, whereas a strong anisotropy appears (v x   =  1600 m s-1 and v y   =  870 m s-1) for the sample prepared with the GLAD process. Using the finite element method, the anisotropy is related to the structural anisotropy of the thin film’s architecture. The drop of PRWs group velocities is mainly assigned to the porous microstructure, especially favored by atomic shadowing effects which appear during the growth of the inclined columns. Such GLAD thin films constitute a new tool for the control of the propagation of surface elastic waves and for the design of new devices with useful properties.

  11. Room temperature chemical synthesis of lead selenide thin films with preferred orientation

    Science.gov (United States)

    Kale, R. B.; Sartale, S. D.; Ganesan, V.; Lokhande, C. D.; Lin, Yi-Feng; Lu, Shih-Yuan

    2006-11-01

    Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH3COO)2 as Pb2+ and Na2SeSO3 as Se2- ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.

  12. Room temperature chemical synthesis of lead selenide thin films with preferred orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kale, R.B. [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30043 (China)]. E-mail: rb_kale@yahoo.co.in; Sartale, S.D. [Hahn Meitner Institute, Glienicker Strasse-100, D-14109 Berlin (Germany); Ganesan, V. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Lin, Y.-F. [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30043 (China); Lu, S.-Y. [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30043 (China)]. E-mail: sylu@mx.nthu.edu.tw

    2006-11-15

    Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH{sub 3}COO){sub 2} as Pb{sup 2+} and Na{sub 2}SeSO{sub 3} as Se{sup 2-} ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.

  13. Room temperature chemical synthesis of lead selenide thin films with preferred orientation

    International Nuclear Information System (INIS)

    Kale, R.B.; Sartale, S.D.; Ganesan, V.; Lokhande, C.D.; Lin, Y.-F.; Lu, S.-Y.

    2006-01-01

    Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH 3 COO) 2 as Pb 2+ and Na 2 SeSO 3 as Se 2- ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV

  14. Relationship between tribology and optics in thin films of mechanically oriented nanocrystals.

    Science.gov (United States)

    Wong, Liana; Hu, Chunhua; Paradise, Ruthanne; Zhu, Zina; Shtukenberg, Alexander; Kahr, Bart

    2012-07-25

    Many crystalline dyes, when rubbed unidirectionally with cotton on glass slides, can be organized as thin films of highly aligned nanocrystals. Commonly, the linear birefringence and linear dichroism of these films resemble the optical properties of single crystals, indicating precisely oriented particles. Of 186 colored compounds, 122 showed sharp extinction and 50 were distinctly linearly dichroic. Of the latter 50 compounds, 88% were more optically dense when linearly polarized light was aligned with the rubbing axis. The mechanical properties of crystals that underlie the nonstatistical correlation between tribological processes and the direction of electron oscillations in absorption bands are discussed. The features that give rise to the orientation of dye crystallites naturally extend to colorless molecular crystals.

  15. (0 0 2-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

    Directory of Open Access Journals (Sweden)

    Guo Dongyun

    2016-09-01

    Full Text Available Zinc acetate was used as a starting material to prepare Zn-solutions from solvents and ligands with different boiling temperature. The ZnO thin films were prepared on Si(1 0 0 substrates by spin-coating method. The effect of baking temperature and boiling temperature of the solvents and ligands on their morphologies and orientation was investigated. The solvents and ligands with high boiling temperature were favorable for relaxation of mechanical stress to form the smooth ZnO thin films. As the solvents and ligands with low boiling temperature were used to prepare Zn-solutions, the prepared ZnO thin films showed (0 0 2 preferred orientation. As n-propanol, 2-methoxyethanol, 2-(methylaminoethanol and monoethanolamine were used to prepare Zn-solutions, highly (0 0 2-oriented ZnO thin films were formed by adjusting the baking temperature.

  16. Characterization and modeling of a highly-oriented thin film for composite forming

    Science.gov (United States)

    White, K. D.; Sherwood, J. A.

    2018-05-01

    Ultra High Molecular Weight Polyethylene (UHMWPE) materials exhibit high impact strength, excellent abrasion resistance and high chemical resistance, making them attractive for a number of impact applications for automotive, marine and medical industries. One format of this class of materials that is being considered for the thermoforming process is a highly-oriented extruded thin film. Parts are made using a two-step manufacturing process that involves first producing a set of preforms and then consolidating these preforms into a final shaped part. To assist in the design of the processing parameters, simulations of the preforming and compression molding steps can be completed using the finite element method. Such simulations require material input data as developed through a comprehensive characterization test program, e.g. shear, tensile and bending, over the range of potential processing temperatures. The current research investigates the challenges associated with the characterization of thin, highly-oriented UHMWPE films. Variations in grip type, sample size and testing rates are explored to achieve convergence of the characterization data. Material characterization results are then used in finite element simulations of the tension test to explore element formulations that work well with the mechanical behavior. Comparisons of the results from the material characterization tests to results of simulations of the same test are performed to validate the finite element method parameters and the credibility of the user-defined material model.

  17. Enhancement of absorption in vertically-oriented graphene sheets growing on a thin copper layer

    Energy Technology Data Exchange (ETDEWEB)

    Rozouvan, Tamara; Poperenko, Leonid [Taras Shevchenko National University of Kyiv, Department of Physics 4, Prospect Glushkova, Kyiv, 03187 (Ukraine); Kravets, Vasyl, E-mail: vasyl_kravets@yahoo.com [School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL (United Kingdom); Shaykevich, Igor [Taras Shevchenko National University of Kyiv, Department of Physics 4, Prospect Glushkova, Kyiv, 03187 (Ukraine)

    2017-02-28

    Highlights: • The optical properties and surface structure of graphene films. • Chemical vapour deposition method. • Scanning tunneling microscopy revealed vertical crystal lattice structure of graphene layer. • We report a significant enhancement of the absorption band in the vertically-oriented graphene sheets. - Abstract: The optical properties and surface structure of graphene films grown on thin copper Cu (1 μm) layer using chemical vapour deposition method were investigated via spectroscopic ellipsometry and nanoscopic measurements. Angle variable ellipsometry measurements were performed to analyze the features of dispersion of the complex refractive index and optical conductivity. It was observed significant enhancement of the absorption band in the vertically-oriented graphene sheets layer with respect to the bulk graphite due to interaction between excited localized surface plasmon at surface of thin Cu layer and graphene’s electrons. Scanning tunneling microscopy measurements with atomic spatial resolution revealed vertical crystal lattice structure of the deposited graphene layer. The obtained results provide direct evidence of the strong influence of the growing condition and morphology of nanostructure on electronic and optical behaviours of graphene film.

  18. Characterization of orientational order in π-conjugated molecular thin films by NEXAFS

    Energy Technology Data Exchange (ETDEWEB)

    Breuer, Tobias, E-mail: tobias.breuer@physik.uni-marburg.de; Klues, Michael; Witte, Gregor

    2015-10-01

    Highlights: • The application of NEXAFS for orientation analysis in organic layers is reviewed. • The important effects of crystalline packing motifs on the dichroism of NEXAFS spectra are described. • Probe depth and surface-sensitivity of NEXAFS are discussed by comparing the various acquisition modes. • Possible parasitic signals and ambiguities of derived structural information are discussed. - Abstract: Enabled by the improved availability of synchrotron facilities, near-edge X-ray absorption fine structure (NEXAFS) spectroscopy has become a widely used technique, especially due to its tunable, potentially very high, surface-sensitivity and its capability of analyzing the electronic structure of unoccupied orbitals. In this article we describe the fundamentals and technical requirements for NEXAFS spectroscopy with special focus on its application to the structural characterization of organic thin films. Based on prominent examples we discuss typical experimental applications of this technique and their characteristics compared to complementary methods. Since the evaluation of NEXAFS measurements is not straight-forward and allows for objectionable misinterpretations, we discuss numerous parasitic and often unattended effects which complicate the reliable analysis of NEXAFS spectra. Especially for the case of orientation determinations by means of NEXAFS using dichroisms analyses, the effects of molecular geometry and crystal packing motifs are elucidated in detail to provide a comprehensive picture on potential obstacles which often occur during the study of organic thin films.

  19. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  20. Quantitative characterization of the composition, thickness and orientation of thin films in the analytical electron microscope

    International Nuclear Information System (INIS)

    Williams, D.B.; Watanabe, M.; Papworth, A.J.; Li, J.C.

    2003-01-01

    Compositional variations in thin films can introduce lattice-parameter changes and thus create stresses, in addition to the more usual stresses introduced by substrate-film mismatch, differential thermal expansion, etc. Analytical electron microscopy comprising X-ray energy-dispersive spectrometry within a probe-forming field-emission gun scanning transmission electron microscope (STEM) is one of the most powerful methods of composition measurement on the nanometer scale, essential for thin-film analysis. Recently, with the development of improved X-ray collection efficiencies and quantitative computation methods it has proved possible to map out composition variations in thin films with a spatial resolution approaching 1-2 nm. Because the absorption of X-rays is dependent on the film thickness, concurrent composition and film thickness determination is another advantage of X-ray microanalysis, thus correlating thickness and composition variations, either of which may contribute to stresses in the film. Specific phenomena such as segregation to interfaces and boundaries in the film are ideally suited to analysis by X-ray mapping. This approach also permits multiple boundaries to be examined, giving some statistical certainty to the analysis particularly in nano-crystalline materials with grain sizes greater than the film thickness. Boundary segregation is strongly affected by crystallographic misorientation and it is now possible to map out the orientation between many different grains in the (S)TEM

  1. Effect of substrate mis-orientation on GaN thin films grown by MOCVD under different carrier gas condition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)

    2005-05-01

    We have studied the effect of a slight mis-orientation angle on surface and crystal quality of GaN thin films grown under different carrier gas conditions. Two types of carrier gas conditions were applied to the growth. One was pure H{sub 2} and the other was mixed N{sub 2}/H{sub 2}. As the result, we found dependence of surface and crystal quality of GaN thin films on the substrate mis-orientation angle, and they indicated almost the same tendency under both growth conditions. Therefore, it was confirmed that mis-orientation angle of sapphire substrate was one of the most critical factors for GaN thin films. Then, the effect of the additional N{sub 2} into the conventional H{sub 2} carrier gas was studied, and we found that the conversion of carrier gas from the conventional H{sub 2} to N{sub 2}/H{sub 2} mixture was effective against degradation of GaN crystallinity at any mis-orientation angle. Considering that the crystal quality of GaN thin films became insensitive to mis-orientation angle as the condition became more suitable for GaN growth, the optimal substrate mis-orientation angle was consequently decided to be approximately 0.15 from the morphological aspect. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Recent achievements in MgB 2 physics and applications: A large-area SQUID magnetometer and point-contact spectroscopy measurements

    Science.gov (United States)

    Gonnelli, R. S.; Daghero, D.; Calzolari, A.; Ummarino, G. A.; Tortello, M.; Stepanov, V. A.; Zhigadlo, N. D.; Rogacki, K.; Karpinski, J.; Portesi, C.; Monticone, E.; Mijatovic, D.; Veldhuis, D.; Brinkman, A.

    2006-03-01

    In the first part of the present paper we discuss the fabrication and the characterization of an MgB2-based SQUID magnetometer with a directly coupled large-area pick-up loop, made on an MgB2 film deposited by an all in situ technique. The coarse structure of the SQUID was defined by optical lithography and Ar-ion milling, while the two nanobridges acting as weak links in the superconducting loop were made by focused ion beam (FIB) milling. The device was characterized at different temperatures and showed Josephson quantum interference up to 20 K as well as a noise level already compatible with the recording of an adult magnetocardiogram. In the second part, concerning the fundamental physics of MgB2, we present the results of very recent point-contact measurements on Mg1-xMnxB2 single crystals with 34.1 ⩾ Tc ⩾ 13.3 K (i.e. 0.37% ⩽ x ⩽ 1.5%). The experimental conductance curves were fitted with the generalized two-band BTK model and their behaviour in magnetic fields was studied to check if both the order parameters (OPs) of the σ and π bands were present in the whole doping range. The dependence of the OPs (evaluated through the fit) on the Andreev critical temperature of the junctions is analyzed in the framework of the two-band Eliashberg theory by including the effects of magnetic impurities. The results give an evidence of a dominant effect of the magnetic impurities on the σ-band channel.

  3. Specific heat of MgB2 in a one- and a two-band model from first-principles calculations

    International Nuclear Information System (INIS)

    Golubov, A.A.; Dolgov, O.V.; Jepsen, O.; Kong, Y.; Andersen, O.K.; Gibson, B.J.; Ahn, K.; Kremer, R.K.; Kortus, J.

    2002-01-01

    The heat capacity anomaly at the transition to superconductivity of the layered superconductor MgB 2 is compared to first-principles calculations with the Coulomb repulsion, μ*, as the only parameter which is fixed to give the measured T c . We solve the Eliashberg equations for both an isotropic one-band model and a two-band model with different superconducting gaps on the π-band anσd-band Fermi surfaces. The agreement with experiments is considerably better for the two-band model than for the one-band model. (author)

  4. Specific heat of the 38-K superconductor MgB_2 in the normal and superconducting state: bulk evidence for a double gap

    OpenAIRE

    Junod, Alain; Wang, Yuxing; Bouquet, Frederic; Toulemonde, Pierre

    2001-01-01

    The specific heat of two polycrystalline samples of MgB_2 is presented and analyzed (2 - 300 K, 0 - 16 T), together with magnetic properties. The main characteristics are a low density of states at the Fermi level, high phonon frequencies, and an anomalous temperature- and field- dependence of the specific heat at T < T_c. A two-gap model with a gap ratio of 3:1 fits the specific heat in zero field. The smaller gap is washed out by a field of 0.5 T.

  5. Controlling compositional homogeneity and crystalline orientation in Bi0.8Sb0.2 thermoelectric thin films

    Science.gov (United States)

    Rochford, C.; Medlin, D. L.; Erickson, K. J.; Siegal, M. P.

    2015-12-01

    Compositional-homogeneity and crystalline-orientation are necessary attributes to achieve high thermoelectric performance in Bi1-xSbx thin films. Following deposition in vacuum, and upon air exposure, we find that 50%-95% of the Sb in 100-nm thick films segregates to form a nanocrystalline Sb2O3 surface layer, leaving the film bulk as Bi-metal. However, we demonstrate that a thin SiN capping layer deposited prior to air exposure prevents Sb-segregation, preserving a uniform film composition. Furthermore, the capping layer enables annealing in forming gas to improve crystalline orientations along the preferred trigonal axis, beneficially reducing electrical resistivity.

  6. Across plane ionic conductivity of highly oriented neodymium doped ceria thin films.

    Science.gov (United States)

    Baure, G; Kasse, R M; Rudawski, N G; Nino, J C

    2015-05-14

    A methodology to limit interfacial effects in thin films is proposed and explained. The strategy is to reduce the impact of the electrode interfaces and eliminate cross grain boundaries that impede ionic motion. To this end, highly oriented Nd0.1Ce0.9O2-δ (NDC) nanocrystalline thin films were grown using pulsed laser deposition (PLD) on platinized single crystal a-plane sapphire substrates. High resolution cross-sectional transmission electron microscopy (HR-XTEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD) verified the films were textured with columnar grains. The average widths of the columns were approximately 40 nm and not significantly changed by film thickness between 100 and 300 nm. HR-XTEM and XRD determined the {111} planes of NDC were grown preferentially on top of the {111} planes of platinum despite the large lattice mismatch between the two planes. From the XRD patterns, the out of plane strains on the platinum and NDC layers were less than 1%. This can be explained by the coincident site lattice (CSL) theory. Rotating the {111} ceria planes 19.11° with respect to the {111} platinum planes forms a Σ7 boundary where 1 in 7 cerium lattice sites are coincident with the platinum lattice sites. This orientation lowers interfacial energy promoting the preferential alignment of those two planes. The across plane ionic conductivity was measured at low temperatures (<350 °C) for the various film thicknesses. It is here shown that columnar grain growth of ceria can be induced on platinized substrates allowing pathways that are clear of blocking grain boundaries that cause conductivities to diminish as film thickness decreases.

  7. The reduction of optimal heat treatment temperature and critical current density enhancement of ex situ processed MgB2 tapes using ball milled filling powder

    Science.gov (United States)

    Fujii, Hiroki; Iwanade, Akio; Kawada, Satoshi; Kitaguchi, Hitoshi

    2018-01-01

    The optimal heat treatment temperature (Topt) at which best performance in the critical current density (Jc) property at 4.2 K is obtained is influenced by the quality or reactivity of the filling powder in ex situ processed MgB2 tapes. Using a controlled fabrication process, the Topt decreases to 705-735 °C, which is lower than previously reported by more than 50 °C. The Topt decrease is effective to suppress both the decomposition of MgB2 and hence the formation of impurities such as MgB4, and the growth of crystallite size which decreases upper critical filed (Hc2). These bring about the Jc improvement and the Jc value at 4.2 K and 10 T reaches 250 A/mm2. The milling process also decreases the critical temperature (Tc) below 30 K. The milled powder is easily contaminated in air and thus, the Jc property of the contaminated tapes degrades severely. The contamination can raise the Topt by more than 50 °C, which is probably due to the increased sintering temperature required against contaminated surface layer around the grains acting as a barrier.

  8. Effect of Alternative Wood Species and First Thinning Wood on Oriented Strand Board Performance

    Directory of Open Access Journals (Sweden)

    Fabiane Salles Ferro

    2018-01-01

    Full Text Available This study aimed to evaluate the feasibility of using and influence of alternative wood species such as Cambará, Paricá, Pinus, and wood from first thinning operations on oriented strand board (OSB physical and mechanical properties. Besides that, an alternative resin, castor oil-based polyurethane, was used to bond the particles, due to the better environmental performance when compared to other resins commonly used worldwide in OSB production. Physical properties such as the moisture content, thickness swelling, and water absorption, both after 2 and 24 hours of water immersion, and mechanical properties such as the modulus of elasticity and resistance in static bending, in major and minor axes, and internal bonding were investigated. All tests were performed according to European code EN 300:2006. Results showed the influence of wood species on physical and mechanical properties. Panels made with higher density woods such as Cambará presented better physical performance, while those made with lower density woods such as Pinus presented better mechanical properties. Besides that, strand particle geometry was also influenced on all physical and mechanical properties investigated. Therefore, the feasibility of using alternative species and wood from first thinning and with castor oil-based polyurethane resin in OSB production was verified.

  9. Optical properties of self assembled oriented island evolution of ultra-thin gold layers

    International Nuclear Information System (INIS)

    Worsch, Christian; Kracker, Michael; Wisniewski, Wolfgang; Rüssel, Christian

    2012-01-01

    Gold layers with a thickness of only 8 to 21 nm were sputtered on soda–lime–silica glasses. Subsequent annealing at 300 and 400 °C for 1 and 24 h resulted in the formation of separated round gold particles with diameters from 8 to 200 nm. Crystal orientations were described using X-ray diffraction and electron backscatter diffraction. The gold particles are oriented with their (111) planes perpendicular to the surface. Most gold nano particles are single crystalline, some particles are twinned. Thermal annealing of sputtered gold layers resulted in purple samples with a coloration comparable to that of gold ruby glasses. The color can be controlled by the thickness of the sputtered gold layer and the annealing conditions. The simple method of gold film preparation and the annealing temperature dependent properties of the layers make them appropriate for practical applications. - Highlights: ► We produce gold nano particle layers on amorphous substrates. ► Thin sputtered gold layers were annealed at low temperatures. ► Various colors can be achieved reproducibly and UV–vis-NIR spectra are reported. ► A 111-texture of the particles is described as well as twinning. ► The process is suitable for mass production.

  10. Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrate

    International Nuclear Information System (INIS)

    Brooks, K.G.; Reaney, I.M.; Klissurska, R.; Huang, Y.; Bursill, L.A.; Setter, N.

    1994-01-01

    The nucleation, growth and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, excess lead addition, and Nb dopant substitution are reported. The use of post pyrolysis oxygen anneals at temperatures in the regime of 350-450 deg C was found to strongly effect the kinetics of subsequent amorphous-pyrochlore perovskite crystallization by rapid thermal annealing. It has also allowed films of reproducible microstructure and textures (both (100) and (111)) to be prepared by rapid thermal annealing. It is suggested that such anneals and pyrolysis temperature affect the oxygen concentration/average Pb valence in the amorphous films prior to annealing. The changes in Pb valence state then affect the stability of the transient pyrochlore phase and thus the kinetics of perovskite crystallization. Nb dopant was also found to influence the crystallization kinetics. 28 refs., 18 figs

  11. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Dangwal Pandey, A., E-mail: arti.pandey@desy.de; Grånäs, E.; Shayduk, R.; Noei, H.; Vonk, V. [Deutsches Elektronen-Synchrotron (DESY), D-22607 Hamburg (Germany); Krausert, K.; Franz, D.; Müller, P.; Keller, T. F.; Stierle, A., E-mail: andreas.stierle@desy.de [Deutsches Elektronen-Synchrotron (DESY), D-22607 Hamburg (Germany); Fachbereich Physik, Universität Hamburg, D-22607 Hamburg (Germany)

    2016-08-21

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  12. Preferential orientation relationships in Ca2MnO4 Ruddlesden-Popper thin films

    International Nuclear Information System (INIS)

    Lacotte, M.; David, A.; Prellier, W.; Rohrer, G. S.; Salvador, P. A.

    2015-01-01

    A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca 2 MnO 4 Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr 2 TiO 4 substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship (OR) for each substrate-film grain pair. Two preferred epitaxial ORs accounted for more than 90% of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell OR ([100][001] film ∥ [100][001] substrate , or OR1) accounted for approximately 30% of each film. The OR that accounted for 60% of each film ([100][001] film ∥ [100][010] substrate , or OR2) corresponds to a rotation from OR1 by 90° about the a-axis. OR2 is strongly favored for substrate orientations in the center of the stereographic triangle, and OR1 is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While OR1 should be lower in energy, the majority observation of OR2 implies kinetic hindrances decrease the frequency of OR1. Persistent grain over grain growth and the absence of variations of the OR frequencies with thickness implies that the growth competition is finished within the first few nm, and local epitaxy persists thereafter during growth

  13. A-axis oriented superconductive YBCO thin films. Growth mechanism on MgO substrate. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Hamet, J F; Mercey, B; Hervieu, M; Poullain, G; Raveau, B [Centre de Materiaux Supraconducteurs, CRISMAT-ISMRa, 14 - Caen (France)

    1992-08-01

    The growth mechanism of a-axis oriented YBCO thin films has been studied by TEM. At 650degC, a disordered cubic perovskite is first formed with a[sub p]parallela[sub MgO], then a strained tetragonal a-axis oriented perovskite is observed, with c=3a[sub p], slightly misoriented with respect to MgO and showing a marquetry-like contrast. At 750degC, a [1anti 10] axis oriented perovskite is formed whose lattice exhibits a rotation with respect to MgO lattice, but also a tilting of the [CuO[sub 2

  14. Compositional dependence of the Young's modulus and piezoelectric coefficient of (110)-oriented pulsed laser deposited PZT thin films

    NARCIS (Netherlands)

    Nazeer, H.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Sardan Sukas, Ö.; Abelmann, Leon; Elwenspoek, Michael Curt

    2014-01-01

    In this contribution, we report on the compositional dependence of the mechanical and piezoelectric properties of Pb(ZrₓTi₿₋ₓ)O₃ (PZT) thin films fabricated by pulsed laser deposition (PLD). These films grow epitaxially on silicon with a (110) preferred orientation and have excellent piezoelectric

  15. Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture

    OpenAIRE

    Heimdal, Carl Philip J

    2014-01-01

    The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron microscopy (SEM) and grazing incidence x-ray diffraction (GIXRD). ZnS thin films were grown on silicon (100) and (111), on HF-treated and untreated silicon (100) as well as substrates coated with Al, Ge and Au. The ZnS films showed entirely different morphologies for ZnS f...

  16. Molecular Orientation of Conjugated Polymer Chains in Nanostructures and Thin Films: Review of Processes and Application to Optoelectronics

    Directory of Open Access Journals (Sweden)

    Varun Vohra

    2017-01-01

    Full Text Available Semiconducting polymers are composed of elongated conjugated polymer backbones and side chains with high solubility and mechanical properties. The combination of these two features results in a high processability and a potential to orient the conjugated backbones in thin films and nanofibers. The thin films and nanofibers are usually composed of highly crystalline (high charge transport and amorphous parts. Orientation of conjugated polymer can result in enhanced charge transport or optical properties as it induces increased crystallinity or preferential orientation of the crystallites. After summarizing the potential strategies to exploit molecular order in conjugated polymer based optoelectronic devices, we will review some of the fabrication processes to induce molecular orientation. In particular, we will review the cases involving molecular and interfacial interactions, unidirectional deposition processes, electrospinning, and postdeposition mechanical treatments. The studies presented here clearly demonstrate that process-controlled molecular orientation of the conjugated polymer chains can result in high device performances (mobilities over 40 cm2·V−1·s−1 and solar cells with efficiencies over 10%. Furthermore, the peculiar interactions between molecularly oriented polymers and polarized light have the potential not only to generate low-cost and low energy consumption polarized light sources but also to fabricate innovative devices such as solar cell integrated LCDs or bipolarized LEDs.

  17. Pressure dependence of the Raman spectrum, lattice parameters and superconducting critical temperature of MgB2: evidence for pressure-driven phonon-assisted electronic topological transition

    International Nuclear Information System (INIS)

    Goncharov, A.F.; Struzhkin, V.V.

    2003-01-01

    We overview recent high-pressure studies of high-temperature superconductor MgB 2 by Raman scattering technique combined with measurements of superconducting critical temperature T c and lattice parameters up to 57 GPa. An anomalously broadened Raman band at 620 cm -1 is observed and assigned to the in-plane boron stretching E 2g mode. It exhibits a large Grueneisen parameter indicating that the vibration is highly anharmonic. The pressure dependencies of the E 2g mode and T c reveal anomalies at 15-22 GPa (isotope dependent). The anharmonic character of the E 2g phonon mode, its anomalous pressure dependence, and also that for T c are interpreted as a result of a phonon-assisted Lifshitz electronic topological transition

  18. Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

    Directory of Open Access Journals (Sweden)

    Yu-Jun Zhang

    2015-07-01

    Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

  19. Multiple Scattering Approach to Polarization Dependence of F K-Edge XANES Spectra for Highly Oriented Polytetrafluoroethylene (PTFE) Thin Film

    International Nuclear Information System (INIS)

    Nagamatsu, S.; Ono, M.; Kera, S.; Okudaira, K. K.; Fujikawa, T.; Ueno, N.

    2007-01-01

    The polarization dependence of F K-edge X-ray absorption near edge structure (XANES) spectra of highly-oriented thin-film of polytetrafluoroethylene (PTFE) has been analyzed by using multiple scattering theory. The spectra show clear polarization dependence due to the highly-oriented structure. The multiple scattering calculations reflects a local structure around an absorbing atom. The calculated results obtained by considering intermolecular-interactions are in good agreement with the observed polarization-dependence. We have also analyzed structural models of the radiation damaged PTFE films

  20. Controlling compositional homogeneity and crystalline orientation in Bi0.8Sb0.2 thermoelectric thin films

    Directory of Open Access Journals (Sweden)

    C. Rochford

    2015-12-01

    Full Text Available Compositional-homogeneity and crystalline-orientation are necessary attributes to achieve high thermoelectric performance in Bi1−xSbx thin films. Following deposition in vacuum, and upon air exposure, we find that 50%–95% of the Sb in 100-nm thick films segregates to form a nanocrystalline Sb2O3 surface layer, leaving the film bulk as Bi-metal. However, we demonstrate that a thin SiN capping layer deposited prior to air exposure prevents Sb-segregation, preserving a uniform film composition. Furthermore, the capping layer enables annealing in forming gas to improve crystalline orientations along the preferred trigonal axis, beneficially reducing electrical resistivity.

  1. Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films

    International Nuclear Information System (INIS)

    Vendrell, X.; Raymond, O.; Ochoa, D.A.; García, J.E.; Mestres, L.

    2015-01-01

    Lead-free (K,Na)NbO 3 (KNN) and La doped (K,Na)NbO 3 (KNN-La) thin films are grown on SrTiO 3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0–20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K 4 Nb 6 O 17 , as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80–380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. - Highlights: • (K 0.5 Na 0.5 )NbO 3 and [(K 0.5 Na 0.5 ) 0.985 La 0.005 ]NbO 3 thin films have been prepared. • The obtained thin films show an excellent (100) preferred orientation. • Doping with lanthanum results in a decrease of the leakage current density. • The dielectric properties are enhanced when doping with lanthanum

  2. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO{sub 2}-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Kiliha [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Shimizu, Takao [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Sakata, Osami [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Uchida, Hiroshi [Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554 (Japan); Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2016-04-07

    Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO{sub 1.5}-0.93HfO{sub 2} films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal–orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO{sub 2}-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O{sub 3} and BiFeO{sub 3}.

  3. Electrochemically modified crystal orientation, surface morphology and optical properties using CTAB on Cu2O thin films

    Directory of Open Access Journals (Sweden)

    Karupanan Periyanan Ganesan

    Full Text Available Cuprous oxide (Cu2O thin films with different crystal orientations were electrochemically deposited in the presence of various molar concentrations of cetyl trimethyl ammonium bromide (CTAB on fluorine doped tin oxide (FTO glass substrate using standard three electrodes system. X-ray diffraction (XRD studies reveal cubic structure of Cu2O with (111 plane orientation, after addition of CTAB in deposition solution, the orientation of crystal changes from (111 into (200 plane. Scanning electron microscope (SEM images explored significant variation on morphology of Cu2O thin films deposited with addition of CTAB compared to without addition of CTAB. Photoluminescence (PL spectra illustrate that the emission peak around at 650 nm is attributed to near band edge emission, and the film prepared at the 3 mM of CTAB exhibits much higher intensity than that of the all other films. UV–Visible spectra show optical absorption in the range of 480–610 nm and the highest transparency of Cu2O film prepared at the concentration of 3 mM CTAB. The optical band gap is increased in the range between 2.16 and 2.45 eV with increasing the CTAB concentrations. Keywords: Cuprous oxide, Crystal orientation, Electrodeposition and cubic structure

  4. Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure.

    Science.gov (United States)

    Mukherjee, Kunal; Hayamizu, Yoshiaki; Kim, Chang Sub; Kolchina, Liudmila M; Mazo, Galina N; Istomin, Sergey Ya; Bishop, Sean R; Tuller, Harry L

    2016-12-21

    Highly textured thin films of undoped, Ce-doped, and Sr-doped Pr 2 CuO 4 were synthesized on single crystal YSZ substrates using pulsed laser deposition to investigate their area-specific resistance (ASR) as cathodes in solid-oxide fuel cells (SOFCs). The effects of T' and T* crystal structures, donor and acceptor doping, and a-axis and c-axis orientation on ASR were systematically studied using electrochemical impedance spectroscopy on half cells. The addition of both Ce and Sr dopants resulted in improvements in ASR in c-axis oriented films, as did the T* crystal structure with the a-axis orientation. Pr 1.6 Sr 0.4 CuO 4 is identified as a potential cathode material with nearly an order of magnitude faster oxygen reduction reaction kinetics at 600 °C compared to thin films of the commonly studied cathode material La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3-δ . Orientation control of the cuprate films on YSZ was achieved using seed layers, and the anisotropy in the ASR was found to be less than an order of magnitude. The rare-earth doped cuprate was found to be a versatile system for study of relationships between bulk properties and the oxygen reduction reaction, critical for improving SOFC performance.

  5. Studies on phase transformation and molecular orientation in nanostructured zinc phthalocyanine thin films annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Avijit; Biswas, Bipul; Majumder, Manisree; Sanyal, Manik Kumar; Mallik, Biswanath, E-mail: spbm@iacs.res.in

    2012-08-31

    Studies on the electronic and optical properties of thin films of organometallic compounds such as phthalocyanine are very important for the development of devices based on these compounds. The nucleation and grain growth mechanism play an important role for the final electronic as well as optoelectronic properties of the organic and organometallic thin films. The present article deals with the change in the film morphology, grain orientation of nanocrystallites and optical properties of zinc phthalocyanines (ZnPc) thin films as a function of the post deposition annealing temperature. The effect of annealing temperature on the optical and structural property of vacuum evaporated ZnPc thin films deposited at room temperature (30 Degree-Sign C) on quartz glass and Si(100) substrates has been investigated. The thin films have been characterized by the UV-vis optical absorption spectra, X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy. From the studies of UV-vis absorption spectra and XRD data, a metastable {alpha} to {beta}-phase transformation has been observed when the thin films were annealed at a temperature greater than about 250 Degree-Sign C. The FESEM images have shown the particlelike structure at room temperature and the structure became rodlike when the films were annealed at high temperatures. TEM image of ZnPc film dissolved in ethanol has shown spectacular rod-shaped crystallites. High resolution transmission electron microscopy image of a single nanorod has shown beautiful 'honey-comb' like structure. Particle size and root mean square roughness were calculated from AFM images. The changes in band gap energy with increase in annealing temperature have been evaluated. - Highlights: Black-Right-Pointing-Pointer Morphology and orientation of grains in zinc phthalocyanine (ZnPc) thin films. Black

  6. Deposition of stress free c-axis oriented LiNbO3 thin film grown on (002) ZnO coated Si substrate

    International Nuclear Information System (INIS)

    Shandilya, Swati; Gupta, Vinay; Tomar, Monika

    2012-01-01

    C-axis oriented lithium niobate thin films have been deposited on Si substrate using RF sputtering technique. A thin buffer layer of c-axis (002) oriented ZnO on Si substrate has been used as a nucleating layer to promote the growth of (006) oriented LiNbO 3 film. The processing gas composition and pressure are found to be very critical in obtaining stress free LiNbO 3 film having desired (006) orientation. The LiNbO 3 films deposited under unique combination of sputtering pressure (10 mTorr) and argon percentage (80%) in reactive gas (Ar + O 2 ) composition become almost stress free having lattice parameter (1.3867 A) close to the bulk value. The observed variation in the structural properties and optical phonon modes observed by Raman spectroscopic studies of the oriented LiNbO 3 thin film with stress has been correlated with growth kinetics.

  7. Fabrication and non-covalent modification of highly oriented thin films of a zeolite-like metal-organic framework (ZMOF) with rho topology

    KAUST Repository

    Shekhah, Osama; Cadiau, Amandine; Eddaoudi, Mohamed

    2015-01-01

    Here we report the fabrication of the first thin film of a zeolite-like metal-organic framework (ZMOF) with rho topology (rho-ZMOF-1, ([In48(HImDC)96]48-)n) in a highly oriented fashion on a gold-functionalized substrate. The oriented rho-ZMOF-1

  8. The influence of the roll diameter in flat rolling of of superconducting in situ and ex situ MgB2 tape

    DEFF Research Database (Denmark)

    Hancock, Michael Halloway; Bay, Niels

    2007-01-01

    , 150 and 210 mm in each step. The investigation has shown that the in situ powder is more readily compacted than the ex situ powder, with an average increase of relative density after mechanical processing of 37% for in situ powder and 19% for ex situ powder. Statistical analysis showed that the choice......Applying the powder in tube (PIT) method, single-filament MgB2/Fe wire and tape has been manufactured applying both the ex situ and the in situ approach. The influence of the roll diameter in three-step flat rolling on the powder density and critical temperature has been examined using rolls of 70...... roll in the first and second reductions followed by the 150 mm or 210 mm roll in the last reduction was the optimum strategy for both powder types. AC susceptibility testing showed that for the in situ tapes there was no correlation between the powder density and the critical temperature. For ex situ...

  9. Negative effects of crystalline-SiC doping on the critical current density in Ti-sheathed MgB2(SiC)y superconducting wires

    International Nuclear Information System (INIS)

    Liang, G; Fang, H; Luo, Z P; Hoyt, C; Yen, F; Guchhait, S; Lv, B; Markert, J T

    2007-01-01

    Ti-sheathed MgB 2 wires doped with nanosize crystalline-SiC up to a concentration of 15 wt% SiC have been fabricated, and the effects of the SiC doping on the critical current density (J c ) and other superconducting properties studied. In contrast with the previously reported results that nano-SiC doping with a doping range below 16 wt% usually enhances J c , particularly at higher fields, our measurements show that SiC doping decreases J c over almost the whole field range from 0 to 7.3 T at all temperatures. Furthermore, it is found that the degradation of J c becomes stronger at higher SiC doping levels, which is also in sharp contrast with the reported results that J c is usually optimized at doping levels near 10 wt% SiC. Our results indicate that these negative effects on J c could be attributed to the absence of significant effective pinning centres (mainly Mg 2 Si) due to the high chemical stability of the crystalline-SiC particles

  10. Fabrication of seven-core multi-filamentary MgB2 wires with high critical current density by an internal Mg diffusion process

    International Nuclear Information System (INIS)

    Togano, K; Hur, J M; Matsumoto, A; Kumakura, H

    2009-01-01

    We found that the reaction between a Mg core and a B powder layer in an internal Mg diffusion (IMD)-processed multi-filamentary wire can proceed rapidly even at a furnace temperature lower than the melting point of Mg (650 deg. C), resulting in the formation of a reacted layer with a fine composite structure and, hence, excellent in-field critical current properties. The multi-filamentary wire is composed of an outermost Cu-Ni sheath and seven filaments with a Ta sheath, a Mg core, and B+SiC powder filled in the space between the Ta sheath and the Mg core. Heat treatment at 645 deg. C for 1 h produced a reacted layer with dense composite structure along the inner wall of the Ta sheath and a hole at the center of each core. This reaction probably initiated from the heat generation at the B/Mg interface, resulting in a temperature rise of the Mg core and the occurrence of liquid Mg infiltration. The J c value at 4.2 K for the reacted layer exceeds 10 5 cm -2 at 9 T, which is the highest reported so far for MgB 2 wire, including powder-in-tube (PIT)-processed wires. These results indicate that the IMD process can compete in terms of practical wire fabrication with the conventional PIT process.

  11. ESR and X-ray diffraction studies on thin films of poly-3-hexylthiophene: Molecular orientation and magnetic interactions

    International Nuclear Information System (INIS)

    Sugiyama, Keisuke; Kojima, Takashi; Fukuda, Hisashi; Yashiro, Hisashi; Matsuura, Toshihiko; Shimoyama, Yuhei

    2008-01-01

    Poly-3-hexylthiophene (P3HT) thin films were investigated by X-ray diffraction (XRD) and electron spin resonance (ESR) to reveal the film structure and molecular organization. The XRD data showed a diffraction pattern with a plane separation between the planes containing thiophene rings of 16.0 A. Comparison between the XRD patterns of powder and thin films of P3HT suggests that the main chains are folded on the substrate. Angular variation of the line position (g-value) of ESR spectra revealed that thiophene ring of P3HT orients along the substrate normal axis. The ESR linewidth varied by the angular rotation, indicating the one-dimensional spin-chain interactions in the P3HT thin films with a linear network of spin-chains. An organic thin-film transistor (OTFT) with P3HT film as a channel layer was then demonstrated. The P3HT films showed conducting characteristics with holes as carriers. The OTFTs indicated a field-effect mobility of 4.93 x 10 -3 cm 2 /Vs and an on/off ratio of 73 in the accumulation mode

  12. High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction

    Science.gov (United States)

    Tamura, N.; MacDowell, A. A.; Celestre, R. S.; Padmore, H. A.; Valek, B.; Bravman, J. C.; Spolenak, R.; Brown, W. L.; Marieb, T.; Fujimoto, H.; Batterman, B. W.; Patel, J. R.

    2002-05-01

    The availability of high brilliance synchrotron sources, coupled with recent progress in achromatic focusing optics and large area two-dimensional detector technology, has allowed us to develop an x-ray synchrotron technique that is capable of mapping orientation and strain/stress in polycrystalline thin films with submicron spatial resolution. To demonstrate the capabilities of this instrument, we have employed it to study the microstructure of aluminum thin film structures at the granular and subgranular levels. Due to the relatively low absorption of x-rays in materials, this technique can be used to study passivated samples, an important advantage over most electron probes given the very different mechanical behavior of buried and unpassivated materials.

  13. Multiferroic BiFeO3 thin films and nanodots grown on highly oriented pyrolytic graphite substrates

    Science.gov (United States)

    Shin, Hyun Wook; Son, Jong Yeog

    2017-12-01

    Multiferroic BiFeO3 (BFO) thin films and nanodots are deposited on highly oriented pyrolytic graphite (HOPG) substrates via a pulsed laser deposition technique, where the HOPG surface has a honeycomb lattice structure made of carbon atoms, similar to graphene. A graphene/BFO/HOPG capacitor exhibited multiferroic properties, namely ferroelectricity (a residual polarization of 26.8 μC/cm2) and ferromagnetism (a residual magnetization of 1.1 × 10-5 emu). The BFO thin film had high domain wall energies and demonstrated switching time of approximately 82 ns. An 8-nm BFO nanodot showed a typical piezoelectric hysteresis loop with an effective residual piezoelectric constant of approximately 110 pm/V and exhibited two clearly separated current curves depending on the ferroelectric polarization direction.

  14. Fabricating 40 µm-thin silicon solar cells with different orientations by using SLiM-cut method

    Science.gov (United States)

    Wang, Teng-Yu; Chen, Chien-Hsun; Shiao, Jui-Chung; Chen, Sung-Yu; Du, Chen-Hsun

    2017-10-01

    Thin silicon foils with different crystal orientations were fabricated using the stress induced lift-off (SLiM-cut) method. The thickness of the silicon foils was approximately 40 µm. The ≤ft foil had a smoother surface than the ≤ft foil. With surface passivation, the minority carrier lifetimes of the ≤ft and ≤ft silicon foil were 1.0 µs and 1.6 µs, respectively. In this study, 4 cm2-thin silicon solar cells with heterojunction structures were fabricated. The energy conversion efficiencies were determined to be 10.74% and 14.74% for the ≤ft and ≤ft solar cells, respectively. The surface quality of the silicon foils was determined to affect the solar cell character. This study demonstrated that fabricating the solar cell by using silicon foil obtained from the SLiM-cut method is feasible.

  15. Superconducting properties of in situ powder-in-tube-processed MgB2 tapes fabricated with sub-micrometre Mg powder prepared by an arc-plasma method

    International Nuclear Information System (INIS)

    Yamada, H; Uchiyama, N; Matsumoto, A; Kitaguchi, H; Kumakura, H

    2007-01-01

    We fabricated in situ powder-in-tube-processed MgB 2 /Fe tapes using sub-micrometre Mg powder prepared by applying an arc-plasma method. We found that the use of this sub-micrometre Mg powder was very effective in increasing the J c values. The transport J c value of 10 mol% SiC-added tapes fabricated with this sub-micrometre Mg powder reached 275 A mm -2 at 4.2 K and 10 T. This value was about six times that of 5 mol% SiC-added tapes fabricated with commercial Mg powder. Microstructure analyses suggest that this J c enhancement is primarily due to the smaller MgB 2 grain size

  16. Thin resolver using the easy magnetization axis of the grain-oriented silicon steel as an angle indicator

    Directory of Open Access Journals (Sweden)

    Jisho Oshino

    2017-05-01

    Full Text Available A new type of thin resolver is presented, in which the easy axis of the magnetic anisotropy in the grain-oriented silicon steel is used as an angle indicator. The total thickness including a rotor, PCB coils and a back yoke can be made less than 4 mm. With a rotor of 50 mm diameter, a good linear response (non-linearity error < 0.4% between the mechanical angle input and the electrical angle output has been obtained. The influence of a weak magnetic anisotropy in the non-grain-oriented silicon steel used for the back yoke on the accuracy of the resolver can be deleted by the method proposed in this paper.

  17. Surface potentials of (111), (110) and (100) oriented CeO{sub 2−x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wardenga, Hans F.; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de

    2016-07-30

    Highlights: • Fermi level, work function and ionization potential of CeO{sub 2} thin films determined. • The state of the surface is varied by different deposition conditions and post-deposition treatments. • The ionization potential varies more than 2 eV. This is much higher than for other oxide surfaces. • The Fermi level position varies only slightly upon surface oxidation and reduction. • A Ce{sup 3+} concentration of >10% remains on the most strongly oxidized surfaces. - Abstract: Differently oriented CeO{sub 2} thin films were prepared by radio frequency magnetron sputter deposition from a nominally undoped CeO{sub 2} target. (111), (110) and (100) oriented films were achieved by deposition onto Al{sub 2}O{sub 3}(0001)/Pt(111), MgO(110)/Pt(110) and SrTiO{sub 3}:Nb(100) substrates, respectively. Epitaxial growth is verified using X-ray diffraction analysis. The films were analyzed by in situ photoelectron spectroscopy to determine the ionization potential, work function, Fermi level position and Ce{sup 3+} concentration at the surface in dependence of crystal orientation, deposition conditions and post-deposition treatment in reducing and oxidizing atmosphere. We observed a very high variation of the work function and ionization potential of more than 2 eV for all surface orientations, while the Fermi level varies by only 0.3 eV within the energy gap. The work function generally decreases with increasing Ce{sup 3+} surface concentration but comparatively high Ce{sup 3+} concentrations remain even after strongly oxidizing treatments. This is related to the presence of subsurface oxygen vacancies.

  18. Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yang, H. F.; Liu, Z. T.; Fan, C. C.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Yao, Q.; Shen, D. W.

    2016-01-01

    By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO 3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO 3 and iso-polarity LaAlO 3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO 3 (111) substrate was more suitable than Nb-doped SrTiO 3 . In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO 3 based superlattices.

  19. Effect of substituted rare earth element in (Yb1-xNd x)Ba2Cu3O y thin film on growth orientation and superconducting properties

    International Nuclear Information System (INIS)

    Honda, R.; Ichino, Y.; Yoshida, Y.; Takai, Y.; Matsumoto, K.; Ichinose, A.; Kita, R.; Mukaida, M.; Horii, S.

    2005-01-01

    We studied the orientation and superconducting properties in (Yb 1-x Nd x )Ba 2 Cu 3 O y (Yb/Nd123) thin films as a function of Yb/Nd composition ratio x. As a results, we needed so high oxygen pressure as to increase x for obtaining the c-axis oriented films. J c -B curves in the Yb/Nd123 thin films were superior to that in YBa 2 Cu 3 O y thin film. Since a RE fluctuation in a composition in the Yb/Nd123 thin films was observed with TEM-EDX, we speculated the pinning centers in the Yb/Nd123 thin films were strongly affected by the RE fluctuation

  20. Control of polymer-packing orientation in thin films through synthetic tailoring of backbone coplanarity

    KAUST Repository

    Chen, Mark S.; Niskala, Jeremy R.; Unruh, David A.; Chu, Crystal K.; Lee, Olivia P.; Frechet, Jean

    2013-01-01

    Controlling solid-state order of π-conjugated polymers through macromolecular design is essential for achieving high electronic device performance; yet, it remains a challenge, especially with respect to polymer-packing orientation. Our work

  1. One-step chemical bath deposition and photocatalytic activity of Cu2O thin films with orientation and size controlled by a chelating agent

    International Nuclear Information System (INIS)

    Xu, HaiYan; Dong, JinKuang; Chen, Chen

    2014-01-01

    Nanocrystalline cuprous oxide (Cu 2 O) thin films were prepared via a one-step chemical bath deposition (CBD) method. The effects of a chelating agent on the orientation, morphology, crystallite size, and photocatalytic activity of the thin films were carefully examined using X-ray diffractometry, scanning electron microscopy, and UV–vis spectrophotometry. The results confirmed that the crystallite size as well as the orientation of the films was dependent on the volume of trisodium citrate (TSC), demonstrating that the band gap ranged from 2.71 eV to 2.49 eV. The morphology and number density of the thin films also depended on the volume of TSC. In addition, the obtained Cu 2 O thin films could degrade methyl orange (MO) efficiently in the presence of H 2 O 2 under visible-light irradiation, and the mechanism for the enhanced photocatalytic activity of the Cu 2 O thin films with the assistance of H 2 O 2 was also explored in detail. - Graphical abstract: Nano-structured Cu 2 O thin films have been prepared by a one-step chemical bath deposition method. The number density, crystallite size, surface morphology and orientation of these thin films could be tailored by chelating agent. The results confirmed that the crystallite size as well as the orientation of the thin films was dependent on the volume of TSC, showed that the band gap ranged from 2.71 eV to 2.49 eV. The formation mechanism of the Cu 2 O particles could be illuminated by an oriented attachment mode. In addition, the obtained Cu 2 O thin films degraded methyl orange efficiently in the presence of H 2 O 2 under the irradiation of visible light, and the mechanism for photocatalytic reaction was also discussed in detail. - Highlights: • Oriented Cu 2 O thin films were prepared by one-step chemical bath deposition. • Orientation and crystallite size were dependent on trisodium citrate volume. • The enhanced visible light degradation mechanism was systematically studied. • Oriented attachment

  2. One-step chemical bath deposition and photocatalytic activity of Cu{sub 2}O thin films with orientation and size controlled by a chelating agent

    Energy Technology Data Exchange (ETDEWEB)

    Xu, HaiYan, E-mail: xuhaiyan@ahjzu.edu.cn; Dong, JinKuang, E-mail: dongjinkuang1988@126.com; Chen, Chen, E-mail: 13865901653@139.com

    2014-01-15

    Nanocrystalline cuprous oxide (Cu{sub 2}O) thin films were prepared via a one-step chemical bath deposition (CBD) method. The effects of a chelating agent on the orientation, morphology, crystallite size, and photocatalytic activity of the thin films were carefully examined using X-ray diffractometry, scanning electron microscopy, and UV–vis spectrophotometry. The results confirmed that the crystallite size as well as the orientation of the films was dependent on the volume of trisodium citrate (TSC), demonstrating that the band gap ranged from 2.71 eV to 2.49 eV. The morphology and number density of the thin films also depended on the volume of TSC. In addition, the obtained Cu{sub 2}O thin films could degrade methyl orange (MO) efficiently in the presence of H{sub 2}O{sub 2} under visible-light irradiation, and the mechanism for the enhanced photocatalytic activity of the Cu{sub 2}O thin films with the assistance of H{sub 2}O{sub 2} was also explored in detail. - Graphical abstract: Nano-structured Cu{sub 2}O thin films have been prepared by a one-step chemical bath deposition method. The number density, crystallite size, surface morphology and orientation of these thin films could be tailored by chelating agent. The results confirmed that the crystallite size as well as the orientation of the thin films was dependent on the volume of TSC, showed that the band gap ranged from 2.71 eV to 2.49 eV. The formation mechanism of the Cu{sub 2}O particles could be illuminated by an oriented attachment mode. In addition, the obtained Cu{sub 2}O thin films degraded methyl orange efficiently in the presence of H{sub 2}O{sub 2} under the irradiation of visible light, and the mechanism for photocatalytic reaction was also discussed in detail. - Highlights: • Oriented Cu{sub 2}O thin films were prepared by one-step chemical bath deposition. • Orientation and crystallite size were dependent on trisodium citrate volume. • The enhanced visible light degradation mechanism

  3. Effect of multi-layered bottom electrodes on the orientation of strontium-doped lead zirconate titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bhaskaran, M. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia)], E-mail: madhu.bhaskaran@gmail.com; Sriram, S. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia); Mitchell, D.R.G.; Short, K.T. [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation (ANSTO), PMB 1, Menai, New South Wales 2234 (Australia); Holland, A.S. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia)

    2008-09-30

    This article discusses the results from X-ray diffraction (XRD) analysis of piezoelectric strontium-doped lead zirconate titanate (PSZT) thin films deposited on multi-layer coatings on silicon. The films were deposited by RF magnetron sputtering on a metal coated substrate. The aim was to exploit the pronounced piezoelectric effect that is theoretically expected normal to the substrate. This work highlighted the influence that the bottom electrode architecture exerts on the final crystalline orientation of the deposited thin films. A number of bottom electrode architectures were used, with the uppermost metal layer on which PSZT was deposited being gold or platinum. The XRD analysis revealed that the unit cell of the PSZT thin films deposited on gold and on platinum were deformed, relative to expected unit cell dimensions. Experimental results have been used to estimate the unit cell parameters. The XRD results were then indexed based on these unit cell parameters. The choice and the thickness of the intermediate adhesion layers influenced the relative intensity, and in some cases, the presence of perovskite peaks. In some cases, undesirable reactions between the bottom electrode layers were observed, and layer architectures to overcome these reactions are also discussed.

  4. Rigid Biopolymer Nanocrystal Systems for Controlling Multicomponent Nanoparticle Assembly and Orientation in Thin Film Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Jennifer [Univ. of Colorado, Boulder, CO (United States)

    2016-10-31

    We have discovered techniques to synthesize well-defined DN conjugated nanostructures that are stable in a wide variety of conditions needed for DNA mediated assembly. Starting from this, we have shown that DNA can be used to control the assembly and integration of semiconductor nanocrystals into thin film devices that show photovoltaic effects.

  5. Optical anisotropy, molecular orientations, and internal stresses in thin sulfonated poly(ether ether ketone) films

    NARCIS (Netherlands)

    Koziara, B.T.; Nijmeijer, K.; Benes, N.E.

    2015-01-01

    The thickness, the refractive index, and the optical anisotropy of thin sulfonated poly(ether ether ketone) films, prepared by spin-coating or solvent deposition, have been investigated with spectroscopic ellipsometry. For not too high polymer concentrations (≤5 wt%) and not too low spin speeds

  6. Optical anisotropy, molecular orientations, and internal stresses in thin sulfonated poly(ether ether ketone) films

    NARCIS (Netherlands)

    Koziara, Beata; Nijmeijer, Dorothea C.; Benes, Nieck Edwin

    2015-01-01

    The thickness, the refractive index, and the optical anisotropy of thin sulfonated poly(ether ether ketone) films, prepared by spin-coating or solvent deposition, have been investigated with spectroscopic ellipsometry. For not too high polymer concentrations (B5 wt%) and not too low spin speeds

  7. The superconducting gaps of C-substituted and Al-substituted MgB2 single crystals by point-contact spectroscopy

    International Nuclear Information System (INIS)

    Daghero, D.; Gonnelli, R.S.; Ummarino, G.A.; Calzolari, A.; Dellarocca, Valeria; Stepanov, V.A.; Zhigadlo, N.; Kazakov, S.M.; Karpinski, J.

    2005-01-01

    We studied the effects of carbon and aluminum substitutions on the gaps of the two-band superconductor MgB 2 by means of point-contact measurements in Mg(B 1-x C x ) 2 and Mg 1-y Al y B 2 single crystals with 0≤x≤0.132 and 0≤y≤0.21. The gap amplitudes, Δ ω and Δ π , were determined by fitting the conductance curves of the point contacts with the standard Blonder-Tinkham-Klapwijk (BTK) model generalized to the two-band case. Whenever possible, their values were confirmed by the independent fit (with a single-band BTK model) of the partial contribution of the two bands to the conductance, separated by means of a suitable magnetic field B*. In C-substituted crystals, the two gaps remain clearly distinct up to x∝0.10, but at x=0.132 we observed for the first time their merging into a single gap Δ≅3 meV with a gap ratio 2Δ=k B T c close to the standard BCS value. In Al-substituted crystals, we found no evidence of this gap merging. Instead, Δ π reaches the value 0.4 meV at y=0.21, where Δ π saturates at about 4 meV. These results are compared with other recent experimental findings in polycrystals and with the predictions of the models for multiband superconductivity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

    Directory of Open Access Journals (Sweden)

    Kaoru Toko

    2015-01-01

    Full Text Available Producing large-grained polycrystalline Si (poly-Si film on glass substrates coated with conducting layers is essential for fabricating Si thin-film solar cells with high efficiency and low cost. We investigated how the choice of conducting underlayer affected the poly-Si layer formed on it by low-temperature (500°C Al-induced crystallization (AIC. The crystal orientation of the resulting poly-Si layer strongly depended on the underlayer material: (100 was preferred for Al-doped-ZnO (AZO and indium-tin-oxide (ITO; (111 was preferred for TiN. This result suggests Si heterogeneously nucleated on the underlayer. The average grain size of the poly-Si layer reached nearly 20 µm for the AZO and ITO samples and no less than 60 µm for the TiN sample. Thus, properly electing the underlayer material is essential in AIC and allows large-grained Si films to be formed at low temperatures with a set crystal orientation. These highly oriented Si layers with large grains appear promising for use as seed layers for Si light-absorption layers as well as for advanced functional materials.

  9. Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaozhi; Yue, Zhenxing, E-mail: yuezhx@mail.tsinghua.edu.cn; Meng, Siqin; Yuan, Lixin [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2014-12-28

    In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

  10. Effect of the Molecular Weight of AB Diblock Copolymers on the Lamellar Orientation in Thin Films

    DEFF Research Database (Denmark)

    Potemkin, Igor I.; Busch, Peter; Smilgies, Detlef-M

    2007-01-01

    We propose a theoretical explanation of the parallel and perpendicular lamellar orientations in free surface films of symmetric polystyrene-block-polybutadiene diblock copolymers on silicon substrates (with a native SiOx layer). Two approaches are developed: A correction to the strong segregation...

  11. Practice-oriented optical thin film growth simulation via multiple scale approach

    Energy Technology Data Exchange (ETDEWEB)

    Turowski, Marcus, E-mail: m.turowski@lzh.de [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); Jupé, Marco [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Melzig, Thomas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Moskovkin, Pavel [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Daniel, Alain [Centre for Research in Metallurgy, CRM, 21 Avenue du bois Saint Jean, Liège 4000 (Belgium); Pflug, Andreas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Lucas, Stéphane [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Ristau, Detlev [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany)

    2015-10-01

    Simulation of the coating process is a very promising approach for the understanding of thin film formation. Nevertheless, this complex matter cannot be covered by a single simulation technique. To consider all mechanisms and processes influencing the optical properties of the growing thin films, various common theoretical methods have been combined to a multi-scale model approach. The simulation techniques have been selected in order to describe all processes in the coating chamber, especially the various mechanisms of thin film growth, and to enable the analysis of the resulting structural as well as optical and electronic layer properties. All methods are merged with adapted communication interfaces to achieve optimum compatibility of the different approaches and to generate physically meaningful results. The present contribution offers an approach for the full simulation of an Ion Beam Sputtering (IBS) coating process combining direct simulation Monte Carlo, classical molecular dynamics, kinetic Monte Carlo, and density functional theory. The simulation is performed exemplary for an existing IBS-coating plant to achieve a validation of the developed multi-scale approach. Finally, the modeled results are compared to experimental data. - Highlights: • A model approach for simulating an Ion Beam Sputtering (IBS) process is presented. • In order to combine the different techniques, optimized interfaces are developed. • The transport of atomic species in the coating chamber is calculated. • We modeled structural and optical film properties based on simulated IBS parameter. • The modeled and the experimental refractive index data fit very well.

  12. Comparison of Cu(In, Ga)Se{sub 2} thin films deposited on different preferred oriented Mo back contact by RF sputtering from a quaternary target

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Jing [Sichuan University, College of Materials Science and Engineering, Chengdu (China); Solar Energy Research Institute, Yunnan Normal University, Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Kunming (China); Peng, Lianqin; Chen, Jinwei; Wang, Gang; Wang, Xueqin; Kang, Hong; Wang, Ruilin [Sichuan University, College of Materials Science and Engineering, Chengdu (China)

    2014-09-15

    The Cu(In, Ga)Se{sub 2} (CIGS) thin films were deposited on bare glass and DC sputtered preferential oriented Mo-coated glass by RF sputtering from a single quaternary target. The structural and morphological properties of the films were characterized by X-ray diffraction (XRD), Raman spectroscope, energy dispersive X-ray spectrometer (EDS) and atomic force microscope (AFM). Preferred orientation of the Mo back contact was tuned between (110) and (211) plane by controlling the thickness. All the deposited CIGS thin films show (112) preferred oriented chalcopyrite structures. The films prepared on Mo-coated glass show higher quality crystallinity, better stoichiometry composition and more smooth surface morphology. Especially, the film on (211) oriented Mo-coated glass with the best integrated performance is expected to be a candidate absorber for high-efficiency CIGS solar cell device. (orig.)

  13. Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O₃ thin films on si wafer prepared by fast cooling immediately after sputter deposition.

    Science.gov (United States)

    Yoshida, Shinya; Hanzawa, Hiroaki; Wasa, Kiyotaka; Esashi, Masayoshi; Tanaka, Shuji

    2014-09-01

    We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e(31,f) = ~-11 C/m(2), with remarkably small dielectric constants, ϵ(r) = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.

  14. Influence of aluminum nitride interlayers on crystal orientation and piezoelectric property of aluminum nitride thin films prepared on titanium electrodes

    International Nuclear Information System (INIS)

    Kamohara, Toshihiro; Akiyama, Morito; Ueno, Naohiro; Nonaka, Kazuhiro; Kuwano, Noriyuki

    2007-01-01

    Highly c-axis-oriented aluminum nitride (AlN) thin films have been prepared on titanium (Ti) bottom electrodes by using AlN interlayers. The AlN interlayers were deposited between Ti electrodes and silicon (Si) substrates, such as AlN/Ti/AlN/Si. The crystallinity and crystal orientation of the AlN films and Ti electrodes strongly depended on the thickness of the AlN interlayers. Although the sputtering conditions were the same, the X-ray diffraction intensity of AlN (0002) and Ti (0002) planes drastically increased, and the full-width at half-maximum (FWHM) of the X-ray rocking curves decreased from 5.1 o to 2.6 o and from 3.3 o to 2.0 o , respectively. Furthermore, the piezoelectric constant d 33 of the AlN films was significantly improved from - 0.2 to - 4.5 pC/N

  15. Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS 2) thin films by MOCVD

    Science.gov (United States)

    Höpfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H.

    1995-06-01

    The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ / mol over the temperature range from 250 to 400°C. From 500 to 630°C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe 1 - xS) occurs at higher growth temperatures. The {S}/{Fe} ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 Å / s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 Å / s. Temperatures above 550°C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 μm.

  16. Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS{sub 2}) thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Hoepfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H. [Hahn-Meitner-Institut Berlin, Abteilung Solare Energetik, Berlin (Germany)

    1995-06-01

    The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ/mol over the temperature range from 250 to 400C. From 500 to 630C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe{sub 1-x}S) occurs at higher growth temperatures. The S/Fe ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 A/s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 A/s. Temperatures above 550C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 {mu}m

  17. Preferential orientation relationships in Ca{sub 2}MnO{sub 4} Ruddlesden-Popper thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lacotte, M.; David, A.; Prellier, W., E-mail: wilfrid.prellier@ensicaen.fr [Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, Université de Basse-Normandie, 6 Bd Maréchal Juin, F-14050 Caen Cedex 4 (France); Rohrer, G. S.; Salvador, P. A. [Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States)

    2015-07-28

    A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca{sub 2}MnO{sub 4} Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr{sub 2}TiO{sub 4} substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship (OR) for each substrate-film grain pair. Two preferred epitaxial ORs accounted for more than 90% of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell OR ([100][001]{sub film} ∥ [100][001]{sub substrate}, or OR1) accounted for approximately 30% of each film. The OR that accounted for 60% of each film ([100][001]{sub film} ∥ [100][010]{sub substrate}, or OR2) corresponds to a rotation from OR1 by 90° about the a-axis. OR2 is strongly favored for substrate orientations in the center of the stereographic triangle, and OR1 is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While OR1 should be lower in energy, the majority observation of OR2 implies kinetic hindrances decrease the frequency of OR1. Persistent grain over grain growth and the absence of variations of the OR frequencies with thickness implies that the growth competition is finished within the first few nm, and local epitaxy persists thereafter during growth.

  18. Through process texture evolution of new thin-gauge non-oriented electrical steels with high permeability

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning; Yang, Ping, E-mail: yangp@mater.ustb.edu.cn; Mao, Wei-Min

    2016-01-01

    This paper demonstrated new methods for producing high permeability thin-gauge non-oriented electrical steels with columnar-grained 3.05% Si cast slabs containing carbon and MnS precipitates, and the texture evolution was investigated. The magnetic properties of 0.2 mm final sheets were greatly improved by the optimized texture comprising {100}〈0vw〉 and strong {hk0}〈001〉 components, and the best combination of B{sub 50} and P{sub 1.5} was exhibited as 1.764 T and 2.45 W/kg respectively. The texture evolution depended on both the moderate inhibiting effect of coarse MnS precipitates and rolling methods. {100}〈0vw〉 texture could be retained from columnar grains, and strong {hk0}〈001〉 texture was obtained by two-stage rolling in distinct ways: On one hand, for the sample corresponding to low second-stage rolling reduction of 60%, based on the large grain size prior to cold rolling, the higher strain of first-stage cold rolling promoted {hk0}〈001〉 nucleation during intermediate annealing. {hk0}〈001〉 grains were further increased after moderate second-stage cold rolling and decarburization annealing, consequently leading to the final strong {100}–{110}〈001〉 texture and uniform microstructure by quantity and size priorities, and the optimum magnetic properties were achieved; on the other hand, secondary recrystallization occurred on fine-grained decarburized matrix at higher second-stage rolling strains and greatly improved the magnetic induction in RD. The level of abnormal Goss grains growth was decreased in the sample corresponding to 80% second-stage rolling reduction, and normal growth of other beneficial grains lowered the magnetic anisotropy, suggesting another potential way for non-oriented electrical steel production. In addition, the effect of carbon was discussed. - Highlights: • New thin-gauge non-oriented electrical steels with high permeability were fabricated. • The magnetic properties were improved by {100}〈0vw〉 and

  19. The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Dilawar [Department of Physics GC University, Lahore 54000 (Pakistan); Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Butt, M.Z., E-mail: mzakriabutt@gmail.com [Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Arif, Bilal [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia); Yakuphanoglu, Fahrettin [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia)

    2017-02-01

    Highly c-axis oriented un-doped ZnO and Al-, Ba-, and Cd-doped ZnO thin films were successfully deposited on glass substrate employing sol-gel spin coating method. XRD analysis showed that all thin films possess hexagonal wurtzite structure with preferred orientation along c-axis. Field emission scanning electron microscope (FESEM) was used to study the morphology of thin films. The morphology consists of spherical and non-spherical shape grains. EDX analysis confirms the presence of O, Zn, Al, Ba, and Cd in the relevant thin films. The optical properties of thin films were studied using UV–Vis spectrometer. All thin films possess more than 85% optical transmittance in the visible region. Blue shift in optical band gap E{sub g} has been observed on doping with Al, whereas doping with Ba and Cd resulted in red shift of E{sub g}. Urbach energy E{sub u} of all doped ZnO thin films was found to have excellent correlation with their band gap energy E{sub g}. Moreover, E{sub g} increases while E{sub u} decreases on the increase in crystallite size D. Optical parameters E{sub g} and E{sub u} as well as structural parameters lattice strain and stacking fault probability also show excellent correlation with the B-factor or the mean-square amplitude of atomic vibrations of the dopant elements. Electrical conductivity measurement of the thin films was carried out using two-point probe method. The electrical conductivity was found to increase with the increase in crystallite orientation along c-axis.

  20. Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary

    NARCIS (Netherlands)

    Wan, X.; Houwman, Evert Pieter; Steenwelle, Ruud Johannes Antonius; van Schaijk, R.; Nguyen, Duc Minh; Dekkers, Jan M.; Rijnders, Augustinus J.H.M.

    2014-01-01

    Piezoelectrical, ferroelectrical, and structural properties of epitaxial pseudocubic (110)pc oriented 500 nm thick PbZr1−xTixO3 thin films, prepared by pulsed laser deposition on (001) silicon substrates, were measured as a function of composition. The dependence of the measurement data on the Ti

  1. Writing on ultra thin uniaxially oriented polymer films with an electron beam

    International Nuclear Information System (INIS)

    Petermann, J.; Wenderoth, K.

    1990-01-01

    Information storage polymers have been described and used for many years. When using an electron beam to store information, chemical changes in the macromolecules via local radiation damage is utilized to print the information into the polymer. This letter reports the writing of optically detectable information into birefringent polymer films. The method is based on the fact that preferred orientation of the macromolecules can be destroyed by electron radiation damage. The damage is produced by an electron beam in a transmission electron microscope. The resulting information is observed optically in a polarizing microscope. The polymer films used in the present study were polybutene 1 (PB 1), polyethylene (PE) and polyvinyl-idenfluoride (PVDF). (author)

  2. Thin grain oriented electrical steel for PWM voltages fed magnetic cores

    Directory of Open Access Journals (Sweden)

    Thierry Belgrand

    2018-04-01

    Full Text Available This paper reports on performances of high permeability grain oriented electrical steel when used in association with power electronic switching devices. Loss measurement results obtained from the Epstein test, using sinusoidal or various PWM voltages in medium frequency range, show that for both studied thicknesses (HGO 0.23mm and HGO 0.18mm, comparing performances at a fixed induction level between the various situations may not be the most convenient method. The effect of magnetic domain refinement has been investigated. After having shown the interest of lowering the thickness, an alternative way of looking at losses is proposed that may help to design the magnetic core when it comes to the matter of reducing size in considering frequency and magnetization levels.

  3. Fabrication and non-covalent modification of highly oriented thin films of a zeolite-like metal-organic framework (ZMOF) with rho topology

    KAUST Repository

    Shekhah, Osama

    2015-01-01

    Here we report the fabrication of the first thin film of a zeolite-like metal-organic framework (ZMOF) with rho topology (rho-ZMOF-1, ([In48(HImDC)96]48-)n) in a highly oriented fashion on a gold-functionalized substrate. The oriented rho-ZMOF-1 film was functionalized by non-covalent modification via post-synthetic exchange of different probe molecules, such as acridine yellow, methylene blue, and Nile red. In addition, encapsulation of a porphyrin moiety was achieved via in situ synthesis and construction of the rho-ZMOF. Adsorption kinetics of volatile organic compounds on rho-ZMOF-1 thin films was also investigated. This study suggests that rho-ZMOF-1 thin films can be regarded as a promising platform for various applications such as sensing and catalysis. This journal is

  4. Deposition of stress free c-axis oriented LiNbO{sub 3} thin film grown on (002) ZnO coated Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Shandilya, Swati; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Miranda House, University of Delhi, Delhi 110007 (India)

    2012-05-15

    C-axis oriented lithium niobate thin films have been deposited on Si substrate using RF sputtering technique. A thin buffer layer of c-axis (002) oriented ZnO on Si substrate has been used as a nucleating layer to promote the growth of (006) oriented LiNbO{sub 3} film. The processing gas composition and pressure are found to be very critical in obtaining stress free LiNbO{sub 3} film having desired (006) orientation. The LiNbO{sub 3} films deposited under unique combination of sputtering pressure (10 mTorr) and argon percentage (80%) in reactive gas (Ar + O{sub 2}) composition become almost stress free having lattice parameter (1.3867 A) close to the bulk value. The observed variation in the structural properties and optical phonon modes observed by Raman spectroscopic studies of the oriented LiNbO{sub 3} thin film with stress has been correlated with growth kinetics.

  5. Dense branched morphology in electrochemical deposition in a thin cell vertically oriented

    International Nuclear Information System (INIS)

    Gonzalez, G.; Soba, A.; Marshall, G.; Molina, F.V.; Rosso, M.

    2007-01-01

    Convection due to electric and gravity forces increase complexity in thin layer electrochemistry (ECD). We describe conditions in a vertical cell with the cathode above the anode in which global convection is eliminated and a dense branched morphology with a smooth front is obtained. It is shown that these conditions allow a theoretical one dimensional modeling notably simplifying the complex analysis of the problem. We report experimental measurements under constant current conditions showing that the deposit, cathodic and proton fronts scale linearly with time, a signature of migration controlled regime. We discuss a theoretical ECD model under galvanostatic conditions with a three ion electrolyte and a growth model, consisting in the one dimensional Nernst-Planck equations for ion transport, the Poisson equation for the electric field and a growth law whose front velocity equals the anion mobility times the local electric field. The model predicts cation, anion and proton concentration profiles, electric field variations and deposit growth speed, that are in good agreement with experiments; the predicted evolution and collision of the deposit and proton fronts reveal a time scaling close to those observed in experiments

  6. Dense branched morphology in electrochemical deposition in a thin cell vertically oriented

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, G. [Laboratoire de Physique de la Matiere Condensee, CNRS-Ecole Polytechnique, F91128 Palaiseau Cedex (France); Laboratorio de Sistemas Complejos, Departamento de Computacion, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina); Soba, A. [Laboratorio de Sistemas Complejos, Departamento de Computacion, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina); Marshall, G. [Laboratorio de Sistemas Complejos, Departamento de Computacion, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina); Cornell Theory Center, and Laboratory for Atomic and Solid State Physics, Cornell University, Ithaca, NY 14850 (United States); Molina, F.V. [INQUIMAE, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina); Rosso, M. [Laboratoire de Physique de la Matiere Condensee, CNRS-Ecole Polytechnique, F91128 Palaiseau Cedex (France)

    2007-11-20

    Convection due to electric and gravity forces increase complexity in thin layer electrochemistry (ECD). We describe conditions in a vertical cell with the cathode above the anode in which global convection is eliminated and a dense branched morphology with a smooth front is obtained. It is shown that these conditions allow a theoretical one dimensional modeling notably simplifying the complex analysis of the problem. We report experimental measurements under constant current conditions showing that the deposit, cathodic and proton fronts scale linearly with time, a signature of migration controlled regime. We discuss a theoretical ECD model under galvanostatic conditions with a three ion electrolyte and a growth model, consisting in the one dimensional Nernst-Planck equations for ion transport, the Poisson equation for the electric field and a growth law whose front velocity equals the anion mobility times the local electric field. The model predicts cation, anion and proton concentration profiles, electric field variations and deposit growth speed, that are in good agreement with experiments; the predicted evolution and collision of the deposit and proton fronts reveal a time scaling close to those observed in experiments. (author)

  7. Structural and dielectric properties of (001) and (111)-oriented BaZr0.2Ti0.8O3 epitaxial thin films

    International Nuclear Information System (INIS)

    Ventura, J.; Fina, I.; Ferrater, C.; Langenberg, E.; Coy, L.E.; Polo, M.C.; Garcia-Cuenca, M.V.; Fabrega, L.; Varela, M.

    2010-01-01

    We have grown and characterized BaZr 0.2 Ti 0.8 O 3 (BZT) epitaxial thin films deposited on (001) and (111)-oriented SrRuO 3 -buffered SrTiO 3 substrates by pulsed laser deposition. Structural and morphological characterizations were performed using X-ray diffractometry and atomic force microscopy, respectively. A cube-on-cube epitaxial relationship was ascertained from the θ-2θ and φ diffractograms in both (001) and (111)-oriented films. The (001)-oriented films showed a smooth granular morphology, whereas the faceted pyramid-like crystallites of the (111)-oriented films led to a rough surface. The dielectric response of BZT at room temperature was measured along the growth direction. The films were found to be ferroelectric, although a well-saturated hysteresis loop was obtained only for the (001)-oriented films. High leakage currents were observed for the (111) orientation, likely associated to charge transport along the boundaries of its crystallites. The remanent polarization, coercive field, dielectric constant, and relative change of dielectric permittivity (tunability) of (111)-oriented BZT were higher than those of (001)-oriented BZT.

  8. Highly Oriented Growth of Piezoelectric Thin Films on Silicon Using Two-Dimensional Nanosheets as Growth Template Layer.

    Science.gov (United States)

    Nguyen, Minh D; Yuan, Huiyu; Houwman, Evert P; Dekkers, Matthijn; Koster, Gertjan; Ten Elshof, Johan E; Rijnders, Guus

    2016-11-16

    Ca 2 Nb 3 O 10 (CNOns) and Ti 0.87 O 2 (TiOns) metal oxide nanosheets (ns) are used as a buffer layer for epitaxial growth of piezoelectric capacitor stacks on Si and Pt/Ti/SiO 2 /Si (Pt/Si) substrates. Highly (001)- and (110)-oriented Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) films are achieved by utilizing CNOns and TiOns, respectively. The piezoelectric capacitors are characterized by polarization and piezoelectric hysteresis loops and by fatigue measurements. The devices fabricated with SrRuO 3 top and bottom electrodes directly on nanosheets/Si have ferroelectric and piezoelectric properties well comparable with devices that use more conventional oxide buffer layers (stacks) such as YSZ, CeO 2 /YSZ, or SrTiO 3 on Si. The devices grown on nanosheets/Pt/Si with Pt top electrodes show significantly improved polarization fatigue properties over those of similar devices grown directly on Pt/Si. The differences in properties are ascribed to differences in the crystalline structures and the density of the films. These results show a route toward the fabrication of single crystal piezoelectric thin films and devices with high quality, long-lifetime piezoelectric capacitor structures on nonperovskite and even noncrystalline substrates such as glass or polished metal surfaces.

  9. Influence of orientation mismatch on charge transport across grain boundaries in tri-isopropylsilylethynyl (TIPS) pentacene thin films.

    Science.gov (United States)

    Steiner, Florian; Poelking, Carl; Niedzialek, Dorota; Andrienko, Denis; Nelson, Jenny

    2017-05-03

    We present a multi-scale model for charge transport across grain boundaries in molecular electronic materials that incorporates packing disorder, electrostatic and polarisation effects. We choose quasi two-dimensional films of tri-isopropylsilylethynyl pentacene (TIPS-P) as a model system representative of technologically relevant crystalline organic semiconductors. We use atomistic molecular dynamics, with a force-field specific for TIPS-P, to generate and equilibrate polycrystalline two-dimensional thin films. The energy landscape is obtained by calculating contributions from electrostatic interactions and polarization. The variation in these contributions leads to energetic barriers between grains. Subsequently, charge transport is simulated using a kinetic Monte-Carlo algorithm. Two-grain systems with varied mutual orientation are studied. We find relatively little effect of long grain boundaries due to the presence of low impedance pathways. However, effects could be more pronounced for systems with limited inter-grain contact areas. Furthermore, we present a lattice model to generalize the model for small molecular systems. In the general case, depending on molecular architecture and packing, grain boundaries can result in interfacial energy barriers, traps or a combination of both with qualitatively different effects on charge transport.

  10. The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)

    2004-09-01

    The effect of a slight mis-orientation of c-plane sapphire substrate on the surface morphology and crystal quality of GaN thin films grown by MOCVD has been investigated. The mis-orientation angle of vicinal c-plane sapphire substrate was changed within the range of 0.00(zero)-1.00(one) degree, and the experimental results were compared with those on just angle (zero degree) c-plane sapphire substrate. The surface morphology and crystal quality were found to be very sensitive to mis-orientation angle. Consequently, the mis-orientation angle was optimized to be 0.15 . (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    International Nuclear Information System (INIS)

    Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

    2014-01-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

  12. Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

    Directory of Open Access Journals (Sweden)

    Huaping Wu

    2016-01-01

    Full Text Available The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110 orientation leads to a lower symmetry and more complicated phase transition than the (111 orientation in BaTiO3 films. The increase of compressive strain will dramatically enhance the Curie temperature TC of (110-oriented BaTiO3 films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110- and (111-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

  13. Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Huaping, E-mail: wuhuaping@gmail.com, E-mail: hpwu@zjut.edu.cn [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024 (China); Ma, Xuefu; Zhang, Zheng; Zeng, Jun; Chai, Guozhong [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); Wang, Jie [Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027 (China)

    2016-01-15

    The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110) orientation leads to a lower symmetry and more complicated phase transition than the (111) orientation in BaTiO{sub 3} films. The increase of compressive strain will dramatically enhance the Curie temperature T{sub C} of (110)-oriented BaTiO{sub 3} films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110)- and (111)-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

  14. Highly c-axis oriented ZnO:Ni thin film nanostructure by RF magnetron sputtering: Structural, morphological and magnetic studies

    International Nuclear Information System (INIS)

    Siddheswaran, R.; Savková, Jarmila; Medlín, Rostislav; Očenášek, Jan; Životský, Ondřej; Novák, Petr; Šutta, Pavol

    2014-01-01

    Highlights: • Highly preferred oriented columnar ZnO:Ni thin films were prepared by magnetron sputtering. • XRD and azimuthal studies explain the characteristics of orientation in [0 0 1] direction. • Surface morphology and grains distribution were explained by FE-SEM. • XTEM specimen prepared by ion slicing used for TEM microstructure analyses. • Tendency of ferromagnetism by influence of Ni content was studied by VSM. - Abstract: Nickel doped zinc oxide (ZnO:Ni) thin films with different Ni concentrations were deposited on silicon substrates at 400 °C by reactive magnetron sputtering using a mixture of Ar and O 2 gases. The X-ray diffraction and azimuthal patterns of the ZnO:Ni were carried out, and the quality of the strong preferred orientation of crystalline columns in the direction [0 0 1] perpendicular to the substrate surface were analysed. The grain size, distribution, and homogeneity of the thin film surfaces were studied by FE-SEM. The EDX and mapping confirmed that the Ni is incorporated into ZnO uniformly. The microstructure of the textured columns was analysed by TEM and HRTEM analyses. The average thickness and length of the columns were found to be about 50 nm and 600 nm, respectively. The rise of ferromagnetism by the influence of Ni content was studied by VSM magnetic studies at room temperature

  15. Preparation of highly oriented Al:ZnO and Cu/Al:ZnO thin films by sol-gel method and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Vijayaprasath, G.; Murugan, R. [School of Physics, Alagappa University, Karaikudi 630 004, Tamil Nadu (India); Mahalingam, T. [Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749 (Korea, Republic of); Hayakawa, Y. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 (Japan); Ravi, G., E-mail: gravicrc@gmail.com [School of Physics, Alagappa University, Karaikudi 630 004, Tamil Nadu (India)

    2015-11-15

    Highly oriented thin films of Al doped ZnO (Al:ZnO) and Cu co-doped Al:ZnO (Cu/Al:ZnO) thin films were successfully deposited by sol–gel spin coating on glass substrates. The deposited films were characterized using X-ray diffraction analysis and found to exhibit hexagonal wurtzite structure with c-axis orientation. SEM images revealed that hexagonal rod shaped morphologies were grown perpendicular to the substrate surface due to repeated deposition process. High transmittance values were observed for pure ZnO compared to Al:ZnO and Cu/Al:ZnO thin films. The band gap widening is caused by the increase of carrier concentration, which is believed to be due to Burstein-Moss effect due to Al and Cu doping. PL spectra of Cu/Al:ZnO thin films indicate that the UV emission peaks slightly shifted towards lower energy side. XPS study was carried out for Zn{sub 0.80}Al{sub 0.10}Cu{sub 0.10}O thin films to analyze the binding energy of Al, Cu, Zn and O. Magnetic measurement studies exhibited ferromagnetic behavior at room temperature, which may be due to the increase in copper concentration in the doped films. The ferromagnetic behavior can be understood from the exchange coupling between localized ‘d’ spin of Cu ion mediated by free delocalized carriers. - Highlights: • High quality of Al:ZnO and Cu co-doped Al:ZnO thin films were fabricated by sol–gel method. • The XRD analyses revealed that the deposited thin films have hexagonal wurtzite structure. • XPS was carried out for Zn{sub 0.80}Al{sub 0.10}Cu{sub 0.10}O films to analyze the binding energy of Al, Cu, Zn and O. • SEM studies were made for Al:ZnO and Cu/Al:ZnO thin films. • RTFM was observed in Cu co-doped Al:ZnO thin films.

  16. Oriented thin films of mixture of a low-bandgap polymer and a fullerene derivative prepared by friction-transfer method

    Science.gov (United States)

    Tanigaki, Nobutaka; Mizokuro, Toshiko; Miyadera, Tetsuhiko; Shibata, Yousei; Koganezawa, Tomoyuki

    2018-02-01

    We have been studying oriented thin films of polymers fabricated by the friction-transfer method, which allows the alignment of a variety of conjugated polymers into highly oriented films. In this study, we prepared oriented blend films of a mixture of a low-bandgap polymer, poly{4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b‧]dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl} (PTB7), and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), which is a promising combination for application in organic solar cells. We obtained oriented blend films of PTB7 and PC71BM by the friction-transfer method from a solid block. Polarized UV-visible spectra show that the PTB7 chains were aligned parallel to the friction direction in the blend films. Grazing-incidence X-ray diffraction (GIXD) studies with synchrotron radiation suggested that the preferred orientation of PTB7 crystallites was face-on in the blend films. The GIXD results also showed the high uniaxial orientation of PTB7 chains in blend films. Photovoltaic devices were fabricated using the friction-transferred blend films of the PTB7 and PC71BM. These bulk heterojunction devices showed better performance than planar heterojunction devices fabricated using pure friction-transferred PTB7 films.

  17. Combined addition of nano diamond and nano SiO2, an effective method to improve the in-field critical current density of MgB2 superconductor

    International Nuclear Information System (INIS)

    Rahul, S.; Varghese, Neson; Vinod, K.; Devadas, K.M.; Thomas, Syju; Anees, P.; Chattopadhyay, M.K.; Roy, S.B.; Syamaprasad, U.

    2011-01-01

    Highlights: → Both nano diamond and nano SiO 2 caused significant modifications in the structural properties of pure MgB 2 sample. → Reduction in T C for the best codoped sample was approximately 2 K. → The best codoped sample yielded a J C , an order of magnitude more than the undoped one at 5 K and 8 T. → The enhanced flux pinning capability provided by the additives is responsible for the improved in-field J C . -- Abstract: MgB 2 bulk samples added with nano SiO 2 and/or nano diamond were prepared by powder-in-sealed-tube (PIST) method and the effects of addition on structural and superconducting properties were studied. X-ray diffraction (XRD) analysis revealed that the addition caused systematic reduction in 'a' lattice parameter due to the substitution of C atoms at B sites and the strain caused by reacted intragrain nano particles of Mg 2 Si as evinced by transmission electron microscope image. Scanning electron microscopy images showed distinct microstructural variations with SiO 2 /diamond addition. It was evident from DC magnetization measurements that the in-field critical current density [J C (H)] of doped samples did not fall drastically like the undoped sample. Among the doped samples the J C (H) of co-doped samples were significantly higher and the best co-doped sample yielded a J C , an order of magnitude more than the undoped one at 5 K and 8 T.

  18. Orientation-dependent physical properties of layered perovskite La{sub 1.3}Sr{sub 1.7}Mn{sub 2}O{sub 7} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Li-Wei; Guo, Bing; Chen, Chang-Le, E-mail: chenchl@nwpu.edu.cn; Luo, Bing-Cheng; Dong, Xiang-Lei; Jin, Ke-Xin

    2017-04-01

    In this paper, the resistivity and magnetization of orientation-engineered layered perovskite La{sub 1.3}Sr{sub 1.7}Mn{sub 2}O{sub 7} epitaxial thin films have been investigated. Epitaxial thin films were deposited on single-crystalline LaAlO{sub 3} (LAO) (001), (110) and (111) substrates by pulse laser deposition (PLD) technique. It is found that only the (100)-oriented thin film performs insulator behavior, whereas the (110) and (111)-oriented thin films exhibit obvious metal-insulator transition at 70 K and between 85 and 120 K, respectively. Moreover, the same spin freezing temperature and different spin-glass-like transition temperatures have been observed in various oriented films. The observed experimental results were discussed according to the electron-transport mechanism and spin dynamics.

  19. Combined effect of preferential orientation and Zr/Ti atomic ratio on electrical properties of Pb(ZrxTi1-x)O3 thin films

    International Nuclear Information System (INIS)

    Gong Wen; Li Jingfeng; Chu Xiangcheng; Gui Zhilun; Li Longtu

    2004-01-01

    Lead zirconate titanate [Pb(Zr x Ti 1-x )O 3 , PZT] thin films with various compositions, whose Zr/Ti ratio were varied as 40/60, 48/52, 47/53, and 60/40, were deposited on Pt(111)/Ti/SiO 2 /Si substrates by sol-gel method. A seeding layer was introduced between the PZT layer and the bottom electrode to control the texture of overlaid PZT thin films. A single perovskite PZT thin film with absolute (100) texture was obtained, when lead oxide was used as the seeding crystal, whereas titanium dioxide resulted in highly [111]-oriented PZT films. The dielectric and ferroelectric properties of PZT films with different preferential orientations were evaluated systemically as a function of composition. The maximums of relative dielectric constant were obtained in the morphotropic phase boundary region for both (100)- and (111)-textured PZT films. The ferroelectric properties also greatly depend on films' texture and composition. The intrinsic and extrinsic contributions to dielectric and ferroelectric properties were discussed

  20. In Situ GISAXS Study on Solvent Vapour Induced Orientation Switching in PS-b-P4VP Block Copolymer Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Gowd, E Bhoje; Boehme, Marcus; Stamm, Manfred, E-mail: gowd@ipfdd.de, E-mail: bhojegowd@yahoo.com [Department of Nanostructured Materials Leibniz Institute of Polymer Research Dresden Hohe Strasse 6, 01069, Dresden (Germany)

    2010-11-15

    We investigated the orientation changes of cylindrical P4VP microdomains in PS-b-P4VP thin films upon annealing in different solvent vapours using the time-resolved in situ grazing-incidence small-angle X-ray scattering (GISAXS) for the first time. Swelling of perpendicular cylinders (C perpendicular) in a non-selective solvent vapours (chloroform) leads to the orientation change to in-plane cylinders (C//) and it occurs through a disordered state. On the other hand, swelling of perpendicular cylinders (C perpendicular) in a selective solvent vapours (1,4-dioxane) leads the morphological change from cylindrical to BCC spherical morphology. Solvent evaporation results in shrinkage of the matrix in the vertical direction and subsequently merges the spheres into the perpendicularly aligned cylinders. The selectivity of the solvent to constituting blocks and the solvent evaporation rate may be mainly responsible for such orientation change of cylindrical P4VP microdomains in PS-b-P4VP thin films.

  1. On the use of response surface methodology to predict and interpret the preferred c-axis orientation of sputtered AlN thin films

    International Nuclear Information System (INIS)

    Adamczyk, J.; Horny, N.; Tricoteaux, A.; Jouan, P.-Y.; Zadam, M.

    2008-01-01

    This paper deals with experimental design applied to response surface methodology (RSM) in order to determine the influence of the discharge conditions on preferred c-axis orientation of sputtered AlN thin films. The thin films have been deposited by DC reactive magnetron sputtering on Si (1 0 0) substrates. The preferred orientation was evaluated using a conventional Bragg-Brentano X-ray diffractometer (θ-2θ) with the CuKα radiation. We have first determined the experimental domain for 3 parameters: sputtering pressure (2-6 mTorr), discharge current (312-438 mA) and nitrogen percentage (17-33%). For the setup of the experimental design we have used a three factors Doehlert matrix which allows the use of the statistical response surface methodology (RSM) in a spherical domain. A four dimensional surface response, which represents the (0 0 0 2) peak height as a function of sputtering pressure, discharge current and nitrogen percentage, was obtained. It has been found that the main interaction affecting the preferential c-axis orientation was the pressure-nitrogen percentage interaction. It has been proved that a Box-Cox transformation is a very useful method to interpret and discuss the experimental results and leads to predictions in good agreement with experiments

  2. In Situ GISAXS Study on Solvent Vapour Induced Orientation Switching in PS-b-P4VP Block Copolymer Thin Films

    International Nuclear Information System (INIS)

    Gowd, E Bhoje; Boehme, Marcus; Stamm, Manfred

    2010-01-01

    We investigated the orientation changes of cylindrical P4VP microdomains in PS-b-P4VP thin films upon annealing in different solvent vapours using the time-resolved in situ grazing-incidence small-angle X-ray scattering (GISAXS) for the first time. Swelling of perpendicular cylinders (C perpendicular) in a non-selective solvent vapours (chloroform) leads to the orientation change to in-plane cylinders (C//) and it occurs through a disordered state. On the other hand, swelling of perpendicular cylinders (C perpendicular) in a selective solvent vapours (1,4-dioxane) leads the morphological change from cylindrical to BCC spherical morphology. Solvent evaporation results in shrinkage of the matrix in the vertical direction and subsequently merges the spheres into the perpendicularly aligned cylinders. The selectivity of the solvent to constituting blocks and the solvent evaporation rate may be mainly responsible for such orientation change of cylindrical P4VP microdomains in PS-b-P4VP thin films.

  3. On the use of response surface methodology to predict and interpret the preferred c-axis orientation of sputtered AlN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Adamczyk, J.; Horny, N.; Tricoteaux, A. [IUT de Valenciennes, Departement Mesures Physiques, UVHC, Z.I. du Champ de l' Abbesse, 59600 Maubeuge (France); Jouan, P.-Y. [IUT de Valenciennes, Departement Mesures Physiques, UVHC, Z.I. du Champ de l' Abbesse, 59600 Maubeuge (France)], E-mail: pierre-yves.jouan@univ-valenciennes.fr; Zadam, M. [Electronic Department, Badji Mokhtar University, BP12 Annaba (Algeria)

    2008-01-15

    This paper deals with experimental design applied to response surface methodology (RSM) in order to determine the influence of the discharge conditions on preferred c-axis orientation of sputtered AlN thin films. The thin films have been deposited by DC reactive magnetron sputtering on Si (1 0 0) substrates. The preferred orientation was evaluated using a conventional Bragg-Brentano X-ray diffractometer ({theta}-2{theta}) with the CuK{alpha} radiation. We have first determined the experimental domain for 3 parameters: sputtering pressure (2-6 mTorr), discharge current (312-438 mA) and nitrogen percentage (17-33%). For the setup of the experimental design we have used a three factors Doehlert matrix which allows the use of the statistical response surface methodology (RSM) in a spherical domain. A four dimensional surface response, which represents the (0 0 0 2) peak height as a function of sputtering pressure, discharge current and nitrogen percentage, was obtained. It has been found that the main interaction affecting the preferential c-axis orientation was the pressure-nitrogen percentage interaction. It has been proved that a Box-Cox transformation is a very useful method to interpret and discuss the experimental results and leads to predictions in good agreement with experiments.

  4. Fabrication of field-effect transistor utilizing oriented thin film of octahexyl-substituted phthalocyanine and its electrical anisotropy based on columnar structure

    Science.gov (United States)

    Ohmori, Masashi; Nakatani, Mitsuhiro; Kajii, Hirotake; Miyamoto, Ayano; Yoneya, Makoto; Fujii, Akihiko; Ozaki, Masanori

    2018-03-01

    Field-effect transistors with molecularly oriented thin films of metal-free non-peripherally octahexyl-substituted phthalocyanine (C6PcH2), which characteristically form a columnar structure, have been fabricated, and the electrical anisotropy of C6PcH2 has been investigated. The molecularly oriented thin films of C6PcH2 were prepared by the bar-coating technique, and the uniform orientation in a large area and the surface roughness at a molecular level were observed by polarized spectroscopy and atomic force microscopy, respectively. The field effect mobilities parallel and perpendicular to the column axis of C6PcH2 were estimated to be (1.54 ± 0.24) × 10-2 and (2.10 ± 0.23) × 10-3 cm2 V-1 s-1, respectively. The electrical anisotropy based on the columnar structure has been discussed by taking the simulated results obtained by density functional theory calculation into consideration.

  5. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

    2014-07-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

  6. Preparation of c-axis perpendicularly oriented ultra-thin L10-FePt films on MgO and VN underlayers

    Science.gov (United States)

    Futamoto, Masaaki; Shimizu, Tomoki; Ohtake, Mitsuru

    2018-05-01

    Ultra-thin L10-FePt films of 2 nm average thickness are prepared on (001) oriented MgO and VN underlayers epitaxially grown on base substrate of SrTiO3(001) single crystal. Detailed cross-sectional structures are observed by high-resolution transmission electron microscopy. Continuous L10-FePt(001) thin films with very flat surface are prepared on VN(001) underlayer whereas the films prepared on MgO(001) underlayer consist of isolated L10-FePt(001) crystal islands. Presence of misfit dislocation and lattice bending in L10-FePt material is reducing the effective lattice mismatch with respect to the underlayer to be less than 0.5 %. Formation of very flat and continuous FePt layer on VN underlayer is due to the large surface energy of VN material where de-wetting of FePt material at high temperature annealing process is suppressed under a force balance between the surface and interface energies of FePt and VN materials. An employment of underlayer or substrate material with the lattice constant and the surface energy larger than those of L10-FePt is important for the preparation of very thin FePt epitaxial thin continuous film with the c-axis controlled to be perpendicular to the substrate surface.

  7. Enhanced c-axis orientation of aluminum nitride thin films by plasma-based pre-conditioning of sapphire substrates for SAW applications

    Science.gov (United States)

    Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Stöger-Pollach, M.; Artner, W.; Hradil, K.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

    2018-03-01

    Aluminum nitride (AlN) on sapphire has been investigated with two different pretreatments prior to sputter deposition of the AlN layer to improve the orientation and homogeneity of the thin film. An inverse sputter etching of the substrate in argon atmosphere results in an improvement of the uniformity of the alignment of the AlN grains and hence, in enhanced electro-mechanical AlN film properties. This effect is demonstrated in the raw measurements of SAW test devices. Additionally, the impulse response of several devices shows that a poor AlN thin film layer quality leads to a higher signal damping during the transduction of energy in the inter-digital transducers. As a result, the triple-transit signal cannot be detected at the receiver.

  8. Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-10-01

    We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

  9. Magnetic and transport properties of Zn0.4Fe2.6O4 thin films with highly preferential orientation

    International Nuclear Information System (INIS)

    Lu, Z.L.; Zou, W.Q.; Liu, X.C.; Lin, Y.B.; Lu, Z.H.; Wang, J.F.; Xu, J.P.; Lv, L.Y.; Zhang, F.M.; Du, Y.W.

    2007-01-01

    Highly preferentially oriented Zn 0.4 Fe 2.6 O 4 thin films have been fabricated on Si, SrTiO 3 and ZrO 2 substrates, respectively, using RF magnetron sputtering. All the films show a large saturation magnetization of about 4.2μ B and low coercive field at 300 K and a spin (cluster) glass transition at about 60 K due to the non-magnetic Zn 2+ ions substitution. Moreover, the fairly high spin polarization of the carrier at 300 K has been confirmed by both the giant magnetoresistance and anomalous Hall coefficient measurements

  10. Correlation of the crystal orientation and electrical properties of silicon thin films on glass crystallized by line focus diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Huang, J.; Teal, A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Suntech R& D Australia, Botany, NSW 2019 (Australia); Varlamov, S.; Green, M.A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

    2016-06-30

    In this work, crystallographic orientation of polycrystalline silicon films on glass formed by continuous wave diode laser crystallization was studied. Most of the grain boundaries were coincidence lattice Σ3 twin boundaries and other types of boundaries such as, Σ6, Σ9, and Σ21 were also frequently observed. The highest photoluminescence signal and mobility were observed for a grain with (100) orientation in the normal direction. X-ray diffraction results showed the highest occupancies between 41 and 70% along the (110) orientation. However, the highest occupancies changed to (100) orientation when a 100 nm thick SiO{sub x} capping layer was applied. Suns-Voc measurement and photoluminescence showed that higher solar cell performance is obtained from the cell crystallized with the capping layer, which is suspected from increased occupancies of (100) orientation. - Highlights: • Linear grains parallel to the scan direction formed with high density. • Σ3 coincidence lattice (CSL) boundaries found inside a grain • Grain boundaries exhibit various CSL boundaries such as Σ9, Σ18, and Σ27. • Grain with < 100 > orientation in normal direction showed highest electrical properties. • Improved voltage observed when percentage of < 100 > normal orientation is increased.

  11. On the aspiration characteristics of large-diameter, thin-walled aerosol sampling probes at yaw orientations with respect to the wind

    International Nuclear Information System (INIS)

    Vincent, J.H.; Mark, D.; Smith, T.A.; Stevens, D.C.; Marshall, M.

    1986-01-01

    Experiments were carried out in a large wind tunnel to investigate the aspiration efficiencies of thin-walled aerosol sampling probes of large diameter (up to 50 mm) at orientations with respect to the wind direction ranging from 0 to 180 degrees. Sampling conditions ranged from sub-to super-isokinetic. The experiments employed test dusts of close-graded fused alumina and were conducted under conditions of controlled freestream turbulence. For orientations up to and including 90 degrees, the results were qualitatively and quantitatively consistent with a new physical model which takes account of the fact that the sampled air not only diverges or converges (depending on the relationship between wind speed and sampling velocity) but also turns to pass through the plane of the sampling orifice. The previously published results of Durham and Lundgren (1980) and Davies and Subari (1982) for smaller probes were also in good agreement with the new model. The model breaks down, however, for orientations greater than 90 degrees due to the increasing effect of particle impaction onto the blunt leading edge of the probe body. For the probe facing directly away from the wind (180 degree orientation), aspiration efficiency is dominated almost entirely by this effect. (author)

  12. Thin (111) oriented CoFe{sub 2}O{sub 4} and Co{sub 3}O{sub 4} films prepared by decomposition of layered cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Buršík, Josef, E-mail: bursik@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68 Husinec-Řež 1001 (Czech Republic); Soroka, Miroslav, E-mail: soroka@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68 Husinec-Řež 1001 (Czech Republic); Uhrecký, Róbert, E-mail: uhrecky@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68 Husinec-Řež 1001 (Czech Republic); Kužel, Radomír, E-mail: kuzel@karlov.mff.cuni.cz [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 5, 121 16 Praha 2 (Czech Republic); Mika, Filip, E-mail: filip.mika@isibrno.cz [Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, v.v.i., Královopolská 147, 612 64 Brno (Czech Republic); Huber, Štěpán, E-mail: stepan.huber@vscht.cz [University of Chemistry and Technology, Faculty of Chemical Technology, Technická 5, 166 28 Prague 6 (Czech Republic)

    2016-07-15

    Graphical abstract: Pole figures of NaCoO{sub 2} (left) and of CoFe{sub 2}O{sub 4} (right) films formed through the transformation of O3-type NaCoO{sub 2} phase in consequence of sodium deintercalation occurring at 800 °C. Films were prepared by chemical solution deposition on MgO(111) substrate. - Highlights: • Epitaxial Na(CoFe)O{sub 2} thin films by means of chemical solution deposition were prepared. • Oriented spinel films through transformation of Na(CoFe)O{sub 2} were obtained. • Orientation relation to MgO, SrTiO{sub 3} and Zr(Y)O{sub 2} substrates were determined. • Structural aspects of Na(CoFe)O{sub 2} → CoFe{sub 2}O{sub 4} transformation pathway were elucidated. - Abstract: The formation and structural characterization of highly (111)-oriented Co{sub 3}O{sub 4} and CoFe{sub 2}O{sub 4} films prepared by a novel procedure from 00l-oriented NaCoO{sub 2} and Na(CoFe)O{sub 2} is reported. The Na(CoFe)O{sub 2} films were deposited on MgO, SrTiO{sub 3}, LaAlO{sub 3}, and Zr(Y)O{sub 2} single crystals with (100) and (111) orientations by chemical solution deposition method and crystallized at 700 °C. Subsequently they were transformed into (111)-oriented spinel phase during post-growth annealing at 800–1000 °C. Morphology and structure of the films was investigated by means of scanning electron microscopy and X-ray diffraction. While all spinel films exhibit pronounced out-of-plane orientation irrespective of substrate, the rate of in-plane orientation strongly depend on lattice misfit values. Different epitaxial phenomena ranging from true one-to-one epitaxy to the existence of many-to-one epitaxy involving two or more orientations were determined by full 3D texture analysis.

  13. Oriented growth of Sr n+1Ti n O3n+1 Ruddlesden-Popper phases in chemical solution deposited thin films

    International Nuclear Information System (INIS)

    Gutmann, Emanuel; Levin, Alexandr A.; Reibold, Marianne; Mueller, Jan; Paufler, Peter; Meyer, Dirk C.

    2006-01-01

    Oriented thin films of perovskite-related Sr n +1 Ti n O 3 n +1 Ruddlesden-Popper phases (n=1, 2, 3) were grown on (001) single-crystalline SrTiO 3 substrates. Preparation of the films was carried out by wet chemical deposition from metalorganic Sr-Ti solutions (rich in Sr) and subsequent conversion into the crystalline state by thermal treatment in air atmosphere at a maximum temperature of 700 deg. C. Solutions were prepared by a modified Pechini method. The films were investigated by wide-angle X-ray scattering and high-resolution transmission electron microscopy. The phase content of powders prepared from the dried solutions and annealed under similar conditions differed from that present in the films, i.e. only polycrystalline SrTiO 3 was detected together with oxides of Ti and Sr. - Graphical abstract: Cross-sectional image of an oriented chemical solution deposited thin film obtained by high-resolution transmission electron microscopy. Periodical spacings corresponding to SrTiO 3 substrate (right) and Sr 2 TiO 4 Ruddlesden-Popper phase (n=1) film region (left) are marked

  14. Broadband dielectric characterization of sapphire/TiOx/Ba₀.₃Sr₀.₇TiO₃ (111)-oriented thin films for the realization of a tunable interdigitated capacitor.

    Science.gov (United States)

    Ghalem, Areski; Ponchel, Freddy; Remiens, Denis; Legier, Jean-Francois; Lasri, Tuami

    2013-05-01

    A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.

  15. Accurate Molecular Orientation Analysis Using Infrared p-Polarized Multiple-Angle Incidence Resolution Spectrometry (pMAIRS) Considering the Refractive Index of the Thin Film Sample.

    Science.gov (United States)

    Shioya, Nobutaka; Shimoaka, Takafumi; Murdey, Richard; Hasegawa, Takeshi

    2017-06-01

    Infrared (IR) p-polarized multiple-angle incidence resolution spectrometry (pMAIRS) is a powerful tool for analyzing the molecular orientation in an organic thin film. In particular, pMAIRS works powerfully for a thin film with a highly rough surface irrespective of degree of the crystallinity. Recently, the optimal experimental condition has comprehensively been revealed, with which the accuracy of the analytical results has largely been improved. Regardless, some unresolved matters still remain. A structurally isotropic sample, for example, yields different peak intensities in the in-plane and out-of-plane spectra. In the present study, this effect is shown to be due to the refractive index of the sample film and a correction factor has been developed using rigorous theoretical methods. As a result, with the use of the correction factor, organic materials having atypical refractive indices such as perfluoroalkyl compounds ( n = 1.35) and fullerene ( n = 1.83) can be analyzed with high accuracy comparable to a compound having a normal refractive index of approximately 1.55. With this improved technique, we are also ready for discriminating an isotropic structure from an oriented sample having the magic angle of 54.7°.

  16. Formation of (111) orientation-controlled ferroelectric orthorhombic HfO{sub 2} thin films from solid phase via annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mimura, Takanori; Katayama, Kiliha [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Shimizu, Takao [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Uchida, Hiroshi [Department of Materials and Life Sciences, Sophia University, Tokyo 102-8554 (Japan); Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Sakata, Osami [Synchrotron X-ray Station at SPring-8 and Synchrotron X-ray Group, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan); Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)

    2016-08-01

    0.07YO{sub 1.5}-0.93HfO{sub 2} (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In{sub 2}O{sub 3}(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates, and (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ–2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrate, which does not contain ITO. Polarization–hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (P{sub r}) of 9.6 and 10.8 μC/cm{sup 2} and coercive fields (E{sub c}) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

  17. Orientation-dependent structural and photocatalytic properties of LaCoO3 epitaxial nano-thin films

    Science.gov (United States)

    Zhang, Yan-ping; Liu, Hai-feng; Hu, Hai-long; Xie, Rui-shi; Ma, Guo-hua; Huo, Ji-chuan; Wang, Hai-bin

    2018-02-01

    LaCoO3 epitaxial films were grown on (100), (110) and (111) oriented LaAlO3 substrates by the polymer-assisted deposition method. Crystal structure measurement and cross-section observation indicate that all the LaCoO3 films are epitaxially grown in accordance with the orientation of LaAlO3 substrates, with biaxial compressive strain in the ab plane. Owing to the different strain directions of CoO6 octahedron, the mean Co-O bond length increases by different amounts in (100), (110) and (111) oriented films compared with that of bulk LaCoO3, and the (100) oriented LaCoO3 has the largest increase. Photocatalytic degradation of methyl orange indicates that the order of photocatalytic activity of the three oriented films is (100) > (111) > (110). Combined with analysis of electronic nature and band structure for LaCoO3 films, it is found that the change of the photocatalytic activity is closely related to the crystal field splitting energy of Co3+ and Co-O binding energy. The increase in the mean Co-O bond length will decrease the crystal field splitting energy of Co3+ and Co-O binding energy and further reduce the value of band gap energy, thus improving the photocatalytic activity. This may also provide a clue for expanding the visible-light-induced photocatalytic application of LaCoO3.

  18. Influence of silicon orientation and cantilever undercut on the determination of the Young’s modulus of thin films

    NARCIS (Netherlands)

    Nazeer, H.; Woldering, L.A.; Abelmann, Leon; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

    The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and measuring the resonance frequency before and after deposition. The accuracy of the method depends strongly on the initial determination of the mechanical properties and dimensions of the cantilever.

  19. On X-ray diffraction study of microstructure of ZnO thin nanocrystalline films with strong preferred grain orientation

    Czech Academy of Sciences Publication Activity Database

    Kužel, R.; Čížek, J.; Novotný, Michal

    44A, č. 1 (2013), s. 45-57 ISSN 1073-5623 R&D Projects: GA ČR(CZ) GAP108/11/0958 Institutional support: RVO:68378271 Keywords : zinc oxide thin film * X-ray diffraction * Mg0 * fused silica Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.730, year: 2013

  20. Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham B.; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Yu, Edward T. [Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Bruley, John [IBM Research Division, Yorktown Heights, New York 10593 (United States)

    2014-02-24

    Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225  °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600  °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure.

  1. Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition

    International Nuclear Information System (INIS)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G.; Posadas, Agham B.; Demkov, Alexander A.; Hu, Chengqing; Yu, Edward T.; Bruley, John

    2014-01-01

    Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO 3 (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO 3 (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225  °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600  °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure

  2. Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} thin films on all-oxide layers buffered silicon

    Energy Technology Data Exchange (ETDEWEB)

    Vu, Hien Thu [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Nguyen, Minh Duc, E-mail: minh.nguyen@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Houwman, Evert; Boota, Muhammad [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Dekkers, Matthijn [SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Vu, Hung Ngoc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Rijnders, Guus [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-12-15

    Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectric properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between

  3. Use of magnetoplumbite and spinel ferrite seed layers for the growth of oriented Y ferrite thin films

    Czech Academy of Sciences Publication Activity Database

    Uhrecký, Róbert; Buršík, Josef; Soroka, Miroslav; Kužel, R.; Prokleška, J.

    2017-01-01

    Roč. 622, JAN (2017), s. 104-110 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GA14-18392S; GA MŠk(CZ) LM2015073 Institutional support: RVO:61388980 Keywords : Hexagonal ferrites * Seed layer * Thin film s * Chemical solution deposition Subject RIV: CA - Inorganic Chemistry OBOR OECD: Inorganic and nuclear chemistry Impact factor: 1.879, year: 2016

  4. Indium hexagonal island as seed-layer to boost a-axis orientation of AlN thin films

    Science.gov (United States)

    Redjdal, N.; Salah, H.; Azzaz, M.; Menari, H.; Manseri, A.; Guedouar, B.; Garcia-Sanchez, A.; Chérif, S. M.

    2018-06-01

    Highly a-axis oriented aluminum nitride films have been grown on Indium coated (100) Si substrate by DC reactive magnetron sputtering. It is shown that In incorporated layer improve the extent of preferential growth along (100) axis and form dense AlN films with uniform surface and large grains, devoid of micro-cracks. As revealed by SEM cross section images, AlN structure consists of oriented columnar grains perpendicular to the Si surface, while AlN/In structure results in uniformely tilted column. SEM images also revealed the presence of In hexagonal islands persistent throughout the entire growth. Micro -Raman spectroscopy of the surface and the cross section of the AlN/In grown films evidenced their high degree of homogeneity and cristallinity.

  5. Highly Oriented Growth of Piezoelectric Thin Films on Silicon using Two-Dimensional Nanosheets as Growth Template Layer

    NARCIS (Netherlands)

    Nguyen, Duc Minh; Yuan, H.; Houwman, Evert Pieter; Dekkers, Jan M.; Koster, Gertjan; ten Elshof, Johan E.; Rijnders, Augustinus J.H.M.

    2016-01-01

    Ca2Nb3O10 (CNOns) and Ti0.87O2 (TiOns) metal oxide nanosheets (ns) are used as a buffer layer for epitaxial growth of piezoelectric capacitor stacks on Si and Pt/Ti/SiO2/Si (Pt/Si) substrates. Highly (001)- and (110)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) films are achieved by utilizing CNOns and TiOns,

  6. Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

    KAUST Repository

    Lee, Dongkyu; Grimaud, Alexis; Crumlin, Ethan J.; Mezghani, Khaled; Habib, Mohamed A.; Feng, Zhenxing; Hong, Wesley T.; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

    2013-01-01

    Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

  7. Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

    KAUST Repository

    Lee, Dongkyu

    2013-09-19

    Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

  8. Nanostructuration of self-assembled poly(styrene-b-isoprene-b-styrene) block copolymer thin films in a highly oriented pyrolytic graphite substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zalakain, Inaki; Ramos, Jose Angel; Fernandez, Raquel; Etxeberria, Haritz; Mondragon, Inaki, E-mail: inaki.mondragon@ehu.e

    2011-01-03

    Highly oriented pyrolitic graphite (HOPG) is a useful substrate to visualize epitaxial formation due to its crystallographic structure. The morphology of a poly(styrene-b-isoprene-b-styrene) block copolymer thin film on a HOPG substrate was investigated by atomic force microscopy. Block copolymer domains generated a morphology with triangular regularity. This arrangement was induced by the HOPG substrate structure due to van der Waals attraction between the HOPG {pi}-conjugated system and aromatic ring of polystyrene domains. However, increasing the film thickness, the substrate effect on the surface morphology decreased. As a consequence, film surfaces showed the coexistence of different structures such as highly aligned cylinders and perforated lamellae. When film thickness exceeded a threshold value, the substrate did not have effect in the surface arrangements and the surface showed a similar morphology to that existing in bulk.

  9. Preferred orientation in Cr- and Co-based thin films and its effects on the read/write performance of the media

    Science.gov (United States)

    Tsai, Hsiao-chu; Lal, Brij B.; Eltoukhy, Atef

    1992-04-01

    This work investigates the formation of preferred crystallographic orientation (PO) in Cr underlayer as well as CoCrTa and CoCrPtTa thin films and its effects on the recording performance of longitudinal media. The results show that the thin-film media with comparable coercivity but different crystalline PO as measured by x-ray diffraction exhibit significant difference in high-frequency signal amplitude, pulse width, and signal-to-noise ratio. To illustrate the effect of PO on parametric performance, CoCrTa/Cr and CoCrPtTa/Cr media were sputtered on different substrates and/or using special sputtering processes to achieve comparable coercivity but different PO in the films. A PO of Cr(200), which normally occurs on the NiP/Al substrates under adequate sputtering conditions, is found to be the key to obtaining a PO of Co(11.0) in Co-alloy media. The consequence of preferred in-plane c-axis orientation is a higher coercivity and better parametric performance of the medium. The formation of PO in the Cr underlayer is found to be related to the substrate material and the oxygen content in the sputtered films. The nonmetallic canasite substrates tend to promote PO of more stable Cr(110) rather than Cr(200). Consequently, this leads to a PO of out-of-plane c axis on the following Co films. The PO of magnetic layer appears to be an important factor in determining the parametric performance of the media.

  10. Microstructure and texture evolution of ultra-thin grain-oriented silicon steel sheet fabricated using strip casting and three-stage cold rolling method

    Energy Technology Data Exchange (ETDEWEB)

    Song, Hong-Yu; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Wang, Yin-Ping; Wang, Guo-Dong

    2017-03-15

    A 0.1 mm-thick grain-oriented silicon steel sheet was successfully produced using strip casting and three-stage cold rolling method. The microstructure, texture and inhibitor evolution during the processing was briefly analyzed. It was found that Goss texture was absent in the hot rolled sheet because of the lack of shear deformation. After normalizing, a large number of dispersed MnS precipitates with the size range of 15–90 nm were produced. During first cold rolling, dense shear bands were generated in the deformed ferrite grains, resulting in the intense Goss texture after first intermediate annealing. The microstructure was further refined and homogenized during the subsequent cold rolling and annealing processes. After primary recrystallization annealing, a homogeneous microstructure consisting of fine and equiaxed grains was produced while the associated texture was characterized by a strong γ-fiber texture. Finally, a complete secondary recrystallization microstructure consisting of entirely large Goss grains was produced. The magnetic induction B{sub 8} and iron loss P{sub 10/400} was 1.79 T and 6.9 W/kg, respectively. - Highlights: • Ultra-thin grain-oriented silicon steel was produced by strip casting process. • Microstructure, texture and inhibitor evolution was briefly investigated. • Goss texture was absent in primary recrystallization annealed sheet. • MnS precipitates with a size range of 15–90 nm formed after normalizing. • A complete secondary recrystallization microstructure was produced.

  11. Temperature-dependent IR-transition moment orientational analysis applied to thin supported films of poly-ε-caprolactone.

    Science.gov (United States)

    Kossack, Wilhelm; Schulz, Martha; Thurn-Albrecht, Thomas; Reinmuth, Jörg; Skokow, Viktor; Kremer, Friedrich

    2017-12-13

    A novel experimental setup is described which enables one to carry out infrared transition moment orientational analysis (IR-TMOA) depending on temperature. By this, three dimensional molecular order parameter tensors of IR-active transition dipole moments with respect to the sample coordinate system can be determined in their thermal evolution (35 °C < T < 59 °C). As an example crystallinity and macroscopic order of poly-ε-caprolcatone are monitored. Both remain largely unaltered up to T ∼ 50 °C, above which they decrease. These reductions are explained as the melting of flat-on crystalline lamellae that make up about 34% of the crystalline material. The remaining crystallites are arranged into bulk-like, confined spherulitic structures and do not melt by more than (3 ± 3)%. Therefore, flat-on oriented lamellae are supposed to be kinetically favored by confinement during melt crystallization but are thermodynamically less stable than two-dimensionally confined bulk-like spherulites.

  12. Statistical analysis of the effect of deposition parameters on the preferred orientation of sputtered AlN thin films

    International Nuclear Information System (INIS)

    Pantojas, V.M.; Otano-Rivera, W.; Caraballo, Jose N.

    2005-01-01

    A response surface statistical method was used to study the effects of deposition pressure, power and substrate temperature on the degree of preferred orientation of aluminum nitride films grown on Si (111) by dc magnetron sputtering. The AlN films were deposited at gas pressures ranging from 0.66 to 1.33 Pa, substrate temperature from 300 to 400 deg. C and power from 100 to 200 W. The degree of preferred orientation was evaluated and quantified using two-dimensional X-ray diffraction, which provides information on the out of plane (002) crystal alignment. The statistical method yielded a surface response curve in the parameter space and a correlation equation between the deposition parameters was obtained. Substrate temperature showed no significant effect upon texture quality for the temperature range studied. A surface response graph as a function of pressure and power was obtained. The main factor affecting texture quality was found to be a pressure-power interaction. The possible mechanisms that contribute to such correlation are discussed. Our best films yielded a rocking curve with full width at half maximum of 6.3 deg

  13. Surface, interface and thin film characterization of nano-materials using synchrotron radiation

    International Nuclear Information System (INIS)

    Kimura, Shigeru; Kobayashi, Keisuke

    2005-01-01

    From the results of studies in the nanotechnology support project of the Ministry of Education, Culture, Sports, Science and Technology of Japan, several investigations on the surface, interface and thin film characterization of nano-materials are described; (1) the MgB 2 thin film by X-ray diffraction, (2) the magnetism of the Pt thin film on a Co film by X-ray magnetic circular dichroism measurement, (3) the structure and physical properties of oxygen molecules absorbed in a micro hole of the cheleted polymer crystal by the direct observation in X-ray powder diffraction, and (4) the thin film gate insulator with a large dielectric constant, thermally treated HfO 2 /SiO 2 /Si, by X-ray photoelectron spectroscopy. (M.H.)

  14. Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers.

    Science.gov (United States)

    Norris, D J; Myronov, M; Leadley, D R; Walther, T

    2017-12-01

    We compare transmission electron microscopical analyses of the onset of islanding in the germanium-on-silicon (Ge/Si) system for three different Si substrate orientations: (001), (11¯0) and (11¯1)Si. The Ge was deposited by reduced pressure chemical vapour deposition and forms islands on the surface of all Si wafers; however, the morphology (aspect ratio) of the deposited islands is different for each type of wafer. Moreover, the mechanism for strain relaxation is different for each type of wafer owing to the different orientation of the (111) slip planes with the growth surface. Ge grown on (001)Si is initially pseudomorphically strained, yielding small, almost symmetrical islands of high aspect ratio (clusters or domes) on top interdiffused SiGe pedestals, without any evidence of plastic relaxation by dislocations, which would nucleate later-on when the islands might have coalesced and then the Matthews-Blakeslee limit is reached. For (11¯0)Si, islands are flatter and more asymmetric, and this is correlated with plastic relaxation of some islands by dislocations. In the case of growth on (11¯1)Si wafers, there is evidence of immediate strain relaxation taking place by numerous dislocations and also twinning. In the case of untwined film/substrate interfaces, Burgers circuits drawn around certain (amorphous-like) regions show a nonclosure with an edge-type a/4[1¯12] Burgers vector component visible in projection along [110]. Microtwins of multiples of half unit cells in thickness have been observed which occur at the growth interface between the Si(11¯1) buffer layer and the overlying Ge material. Models of the growth mechanisms to explain the interfacial configurations of each type of wafer are suggested. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

  15. Large third-order optical nonlinearity in vertically oriented mesoporous silica thin films embedded with Ag nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Min; Liu, Qiming, E-mail: qmliu@whu.edu.cn [Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology (China)

    2016-12-15

    Taking advantage of the channel confinement of mesoporous films to prevent the agglomeration of Ag nanoparticles to achieve large third-order optical nonlinearity in amorphous materials, Ag-loaded composite mesoporous silica film was prepared by the electrochemical deposition method on ITO substrate. Ag ions were firstly transported into the channels of mesoporous film by the diffusion and binding force of channels, which were reduced to nanoparticles by applying suitable voltage. The existence and uniform distribution of Ag nanoparticles ranging in 1–10 nm in the mesoporous silica thin films were exhibited by UV spectrophotometer, X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) measurements. The third-order optical nonlinearity induced by Ag nanoparticles was studied by the Z-scan technique. Due to the local field surface plasmon resonance, the maximum third-order nonlinear optical susceptibility of Ag-loaded composite mesoporous silica film is 1.53×10{sup −10} esu, which is 1000 times larger than that of the Ag-contained chalcogenide glasses which showed large nonlinearity in amorphous materials.

  16. Damping Oriented Design of Thin-Walled Mechanical Components by Means of Multi-Layer Coating Technology

    Directory of Open Access Journals (Sweden)

    Giuseppe Catania

    2018-02-01

    Full Text Available The damping behaviour of multi-layer composite mechanical components, shown by recent research and application papers, is analyzed. A local dissipation mechanism, acting at the interface between any two different layers of the composite component, is taken into account, and a beam model, to be used for validating the known experimental results, is proposed. Multi-layer prismatic beams, consisting of a metal substrate and of some thin coated layers exhibiting variable stiffness and adherence properties, are considered in order to make it possible to study and validate this assumption. A dynamical model, based on a simple beam geometry but taking into account the previously introduced local dissipation mechanism and distributed visco-elastic constraints, is proposed. Some different application examples of specific multi-layer beams are considered, and some numerical examples concerning the beam free and forced response are described. The influence of the multilayer system parameters on the damping behaviour of the free and forced response of the composite beam is investigated by means of the definition of some damping estimators. Some effective multi-coating configurations, giving a relevant increase of the damping estimators of the coated structure with respect to the same uncoated structure, are obtained from the model simulation, and the results are critically discussed.

  17. Solvent Annealing Induced Perpendicular Orientation of Cylindrical Microdomains in Polystyrene-b-poly(4-hydroxyl styrene)/PEG Oligomer Blend Thin Film Made by Spin-coating from Selective Solvent

    Energy Technology Data Exchange (ETDEWEB)

    Matsutani, Taito; Yamamoto, Katsuhiro, E-mail: yamamoto.katsuhiro@nitech.ac.jp [Department of Materials Science and Technology, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2011-01-01

    The microphase separated structure of PS-b-PHS/PEG blend thin film with thickness of 500 {approx} 600 nm was investigated by grazing incidence small angle X-ray scattering. The thin film was obtained by two different solutions; one was THF which was common good solvent for all components of polymers used here. The other is toluene which was selective solvent for PS and poor-solvent for PHS and PEG. The equilibrium morphology of the block copolymer and blend sample was hexagonally packed cylinder in the bulk and thin film. The structure in the thin film obtained by spin cast from toluene solution was non-equilibrium. After THF vopar annealing of the thin film (cast from toluene), the highly ordered and perpendicular oriented cylindrical structure was obtained. Perpendicular orientation was failure when the thin film sample made by spin cast from THF solution and subsequent THF vapor annealing. The perpendicular nano-holes were fabricated after removing PEG oligomer by washing with water.

  18. Domain structures and temperature-dependent spin reorientation transitions in c-axis oriented Co-Cr thin films

    International Nuclear Information System (INIS)

    Kusinski, Greg J.; Krishnan, Kannan M.; Thomas, Gareth; Nelson, E. C.

    2000-01-01

    Highly c-axis oriented Co 95 Cr 5 films with perpendicular anisotropy were grown epitaxially on Si (111), using an Ag seed layer, by physical vapor deposition. Films were characterized by x-ray diffraction, transmission electron microscopy (TEM), selected area electron diffraction, and Lorentz microscopy in a TEM. The following epitaxial relationship was confirmed: (111) Si (parallel sign)(111) Ag (parallel sign)(0001) CoCr ;[2(bar sign)20] Si (parallel sign)[2(bar sign)20] Ag (parallel sign)[1(bar sign)100] CoCr . Magnetic domain structures of these films were observed as a function of thickness; t, in the range, 200 Aa c ≅300 Aa, the magnetization was found to be effectively in-plane of the film, and above t c a regular, stripe-like domain pattern with a significant, alternating in sign, perpendicular component was observed. The spin reorientation transitions of the stripe domains to the in-plane magnetization were studied dynamically by observing the domains as a function of temperature by in situ heating up to 350 degree sign C. The critical transition thickness, t c , which is a function of K u and magnetostatic energy, was found to increase with increasing temperature. The stripe-domain period, L observed at room temperature was found to increase gradually with thickness; L=90 nm at t=300 Aa, and L=110 nm at t=700 Aa. (c) 2000 American Institute of Physics

  19. Structural and optical characteristics of in-situ sputtered highly oriented 15R-SiC thin films on different substrates

    Science.gov (United States)

    Mourya, Satyendra; Jaiswal, Jyoti; Malik, Gaurav; Kumar, Brijesh; Chandra, Ramesh

    2018-01-01

    In this work, we have reported the in-situ fabrication of nanocrystalline rhombohedral silicon carbide (15R-SiC) thin films by RF-magnetron sputtering at 800 °C substrate temperature. The structural and optical properties were investigated for the films grown on four different substrates (ZrO2, MgO, SiC, and Si). The contact angle measurement was performed on all the substrates to investigate the role of interfacial surface energy in nucleation and growth of the films. The XRD measurement revealed the growth of (1 0 10) orientation for all the samples and demonstrated better crystallinity on Si substrate, which was further corroborated by the TEM results. The Raman spectroscopy confirmed the growth of rhombohedral phase with 15R polytype. Surface characteristics of the films have been investigated by energy dispersive x-ray spectroscopy, FTIR, and atomic force microscope (AFM) to account for chemical composition, bonding, and root mean square surface roughness (δrms). The optical dispersion behavior of 15R-SiC thin films was examined by variable angle spectroscopic ellipsometry in the wide spectral range (246-1688 nm), including the surface characteristics in the optical model. The non-linear optical parameters (χ3 and n2) of the samples have been calculated by the Tichy and Ticha relation using a single effective oscillator model of Wemple and Didomenico. Additionally, our optical results provided an alternative way to measure the ratio of carrier concentration to the effective mass (N/m*). These investigated optical parameters allow one to design and fabricate optoelectronic, photonic, and telecommunication devices for deployment in extreme environment.

  20. Hydrothermal–galvanic couple synthesis of directionally oriented BaTiO3 thin films on TiN-coated substrates

    International Nuclear Information System (INIS)

    Yang, Chia-Jung; Tsai, Di-You; Chan, Pei-Hsuan; Wu, Chu-Tsun; Lu, Fu-Hsing

    2013-01-01

    BaTiO 3 films were synthesized on TiN-coated Si substrate below 100 °C by a hydrothermal–galvanic couple technique in barium contained alkaline solutions. X-ray diffraction and electron backscatter diffraction results show that the BaTiO 3 thin films were directionally oriented grown on the TiN/Si substrates, i.e., (111) BaTiO 3 over (111) TiN. The surface morphologies revealed that BaTiO 3 nucleated and grew over the TiN surface with a single layer. From kinetic analyses, the growth rates of BaTiO 3 films prepared by the hydrothermal–galvanic couple technique were faster than a hydrothermal method. The galvanic effects were confirmed by investigating the induced currents and energies. The galvanic currents were generated and controlled by both the dissolution of TiN and the formation of BaTiO 3 . The output electric energies increased rapidly with the reaction time and leveled off at the full coverage of BaTiO 3 . - Highlights: • Cubic BaTiO 3 films are synthesized by a hydrothermal–galvanic couple method (HT–GC). • Growth rates of BaTiO 3 films made by HT–GC are faster than a hydrothermal method. • BaTiO 3 films are directionally oriented grown on the TiN/Si substrates. • Galvanic currents are controlled by dissolution of TiN and formation of BaTiO 3

  1. Improving the thermoelectric performance of metastable rock-salt GeTe-rich Ge-Sb-Te thin films through tuning of grain orientation and vacancies

    Energy Technology Data Exchange (ETDEWEB)

    Chen, I. Nan [Department of Physics, National Taiwan University, Taipei (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei (China); Chong, Cheong-Wei [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei (China); Wong, Deniz P.; Lyu, Liang-Ming; Chien, Wei-Lun; Anbalagan, Ramakrishnan; Aminzare, Masoud; Chen, Kuei-Hsien [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei (China); Chen, Yang-Fang [Department of Physics, National Taiwan University, Taipei (China); Chen, Li-Chyong [Center for Condensed Matter Sciences, National Taiwan University, Taipei (China)

    2016-12-15

    Phase-change memory materials such as the pseudobinary GeTe-Sb{sub 2}Te{sub 3} compounds have recently gained attention for their good thermoelectric properties, which can be used for power-generation/cooling applications. In this work, GeTe-rich Ge-Sb-Te thin films deposited using a radio-frequency magnetron sputtering method readily exhibit the metastable face-centered cubic (FCC) phase at room temperature. This is in stark contrast to its bulk form, which only transforms to its FCC phase after a transition temperature of around 350 C. Based on previous works, the FCC phase contributes to the superior thermoelectric properties of this material system. In this study, by decreasing the working deposition pressure, the preferred orientation of (200) plane is observed that translates to improved carrier mobility. Moreover, increasing the annealing temperature has been shown to decrease the carrier concentration due to Te deficiency, leading to a significant improvement in the Seebeck coefficient of the film. By combining these effects, an optimized thermoelectric power factor (21 μW/cm K{sup 2}) was obtained at an operating temperature of 350 C. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Influence of Zr/Ti ratio and preferred orientation on polarization switching and domain configuration of Pb(Zr1-xTix)O3 thin films

    International Nuclear Information System (INIS)

    Lee, Young Hyun; Lee, Jung Kun; Hong, Kug Sun

    2003-01-01

    The (100) and (111) oriented Pb(Zr 1-x Ti x )O 3 (PZT) thins films were prepared on Pt/TiO 2 /SiO 2 /Si(100) substrate using sol-gel process. The ferroelectric and dielectric properties were evaluated as a function of Zr/Ti ratio and the origin of their changes were discussed in terms of domain engineering. With increasing Zr/Ti ratio, the remnant polarization of the polar axis decreased from 23.87 to 10.66 μC/cm 2 and the difference of the saturated polarization between polar axis and non-polar axis increased systematically. The fatigue rate of PZT films was disproportional to Zr/Ti ratio. At a composition of x = 0.7, the remnant polarization decreased from 2P r = 30.82 μC/cm 2 to 26.60 μC/cm 2 after 6.9 x 10 10 cycles. The fatigue rate was also related to the direction of polarization reversal and the increased fatigue behavior was observed in polar axis. These results were discussed with the aid of the domain configuration and the switching current, which revealed the role of the internal stress on ferroelectric property of PZT films

  3. Temperature stability of c-axis oriented LiNbO{sub 3}/SiO{sub 2}/Si thin film layered structures

    Energy Technology Data Exchange (ETDEWEB)

    Tomar, Monika [Department of Physics and Astrophysics, University of Delhi, Delhi (India)]. E-mail: mtomar@physics.du.ac.in; monikatomar@rediffmail.com; Gupta, Vinay; Mansingh, Abhai; Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi (India)

    2001-08-07

    Theoretical calculations have been performed for the temperature stability of the c-axis oriented LiNbO{sub 3} thin film layered structures on passivated silicon (SiO{sub 2}/Si) substrate with and without a non-piezoelectric SiO{sub 2} overlayer. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. The thicknesses of various layers have been determined for optimum SAW performance with zero TCD. The presence of a non-piezoelectric SiO{sub 2} overlayer on LiNbO{sub 3} film is found to significantly enhance the coupling coefficient. The optimized results reveal that a high coupling coefficient of K{sup 2}=3.45% and a zero TCD can be obtained in the SiO{sub 2}/LiNbO{sub 3}/SiO{sub 2}/Si structure with a 0.235{lambda} thick LiNbO{sub 3} layer sandwiched between 0.1{lambda} thick SiO{sub 2} layers. (author)

  4. Temperature stability of c-axis oriented LiNbO3/SiO2/Si thin film layered structures

    International Nuclear Information System (INIS)

    Tomar, Monika; Gupta, Vinay; Mansingh, Abhai; Sreenivas, K.

    2001-01-01

    Theoretical calculations have been performed for the temperature stability of the c-axis oriented LiNbO 3 thin film layered structures on passivated silicon (SiO 2 /Si) substrate with and without a non-piezoelectric SiO 2 overlayer. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. The thicknesses of various layers have been determined for optimum SAW performance with zero TCD. The presence of a non-piezoelectric SiO 2 overlayer on LiNbO 3 film is found to significantly enhance the coupling coefficient. The optimized results reveal that a high coupling coefficient of K 2 =3.45% and a zero TCD can be obtained in the SiO 2 /LiNbO 3 /SiO 2 /Si structure with a 0.235λ thick LiNbO 3 layer sandwiched between 0.1λ thick SiO 2 layers. (author)

  5. Thermally activated dissipation and critical field Hc2 in c-oriented high-Tc Bi-Pb-Sr-Ca-Cu-O thin film

    International Nuclear Information System (INIS)

    Wang, Y.H.; Cui, C.G.; Zhang, Y.Z.; Li, S.L.; Li, J.; Li, L.

    1991-01-01

    A set of resistivity-temperature (R-T) curves measured under various applied fields in a high-T c Bi-Pb-Sr-Ca-Cu-O thin film which has a zero-resistance temperature T c0 of 110 K is reported. The remarkable broadening of the transition width is discussed under the flux-creep model, considering the very short coherence length of this oxide superconductor. The resistivity is thermally activated, which is consistent with the Arrhenius law with a magnetic field and orientation-dependent activation energy U 0 (H,Θ). The U 0 (H,Θ) has a very high value of 381.6 meV under a field of 0.1 T parallel to the c axis. The upper critical field H c2 determined from these R-T curves shows high values and the effect of flux creep to the H c2 (0) is examined by the irreversible behavior with the ''giant'' flux-creep model

  6. Growth and characterization of thin oriented Co{sub 3}O{sub 4} (111) films obtained by decomposition of layered cobaltates Na{sub x}CoO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Buršík, Josef, E-mail: bursik@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68, Husinec-Řež 1001 (Czech Republic); Soroka, Miroslav, E-mail: soroka@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68, Husinec-Řež 1001 (Czech Republic); Kužel, Radomír, E-mail: kuzel@karlov.mff.cuni.cz [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Praha 2 (Czech Republic); Mika, Filip, E-mail: filip.mika@isibrno.cz [Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, v.v.i., Královopolská 147, 612 64 Brno (Czech Republic)

    2015-07-15

    The formation and structural characterization of highly (111)-oriented Co{sub 3}O{sub 4} films prepared by a novel procedure from weakly (001)-oriented Na{sub x}CoO{sub 2} is reported. The Na{sub x}CoO{sub 2} films were deposited on both single crystal and amorphous substrates by chemical solution deposition (CSD) method and crystallized at 700 °C. Subsequently they were transformed into (111)-oriented Co{sub 3}O{sub 4} phase during post-growth annealing at 900 °C. The degree of preferred orientation in Co{sub 3}O{sub 4}, which was determined by phi-scan and pole figure measurements, depends on the content of Na in the starting Na{sub x}CoO{sub 2} phase. Surface morphology of the films was investigated using electron microscopy and atomic force microscopy. - Graphical abstract: Structure of growth twins and possible O{sup 2−} stacking sequences in (111)-oriented Co{sub 3}O{sub 4} thin films on α-Al{sub 2}O{sub 3}(001) prepared by chemical solution deposition through the transformation of (001)-oriented Na{sub x}CoO{sub 2} thin film. - Highlights: • Single phase Co{sub 3}O{sub 4} thin films was prepared by means of chemical solution deposition. • Conditions for γ-Na{sub x}CoO{sub 2} to Co{sub 3}O{sub 4} transformation were optimized. • Growth twinning of Co{sub 3}O{sub 4} films due to two possible O{sup 2−} stacking sequences. • Growth with (pseudo)epitaxial relation Co{sub 3}O{sub 4} (111)[−121]//α-Al{sub 2}O{sub 3} (001)[10−10].

  7. C-axial oriented (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 thin film grown on Nb doped SrTiO3 substrate by pulsed laser deposition

    International Nuclear Information System (INIS)

    Cao, L Z; Fu, W Y; Wang, S F; Wang, Q; Sun, Z H; Yang, H; Cheng, B L; Wang, H; Zhou, Y L

    2007-01-01

    A c-axial oriented (Bi 1.5 Zn 0.5 )(Zn 0.5 Nb 1.5 )O 7 thin film has been grown on a (0 0 1) Nb doped SrTiO 3 substrate by pulsed laser deposition. The permittivity, dielectric loss and tunability of the c-axial oriented film are 187, 0.002 and 6% (at 750 kV cm -1 biasing), respectively, indicating a figure of merit of 30. Moreover, an asymmetry behaviour is observed in the dc electric field dependence of permittivity, which could be attributed to the asymmetry of top and bottom electrodes

  8. Enhanced energy storage and pyroelectric properties of highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 thin films derived at low temperature

    Science.gov (United States)

    Zhu, Hanfei; Ma, Hongfang; Zhao, Yuyao

    2018-05-01

    Highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.15, y = 0.05; x = 0.1, y = 0.1; x = 0.05, y = 0.15) thin films were deposited on Pt/Ti/SiO2/Si substrates at a low temperature of 450 °C via a sol-gel route. It was found that all the (Pb1-x-yLaxCay)Ti1-x/4O3 thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.1, y = 0.1) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss (tan ⁡ δ energy density (Wre ∼ 15 J/cm3), as well as a large pyroelectric coefficient (p ∼ 190 μC/m2K) and figure of merit (Fd‧∼ 77 μC /m2K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.

  9. Sonicated sol–gel preparation of nanoparticulate ZnO thin films with various deposition speeds: The highly preferred c-axis (0 0 2) orientation enhances the final properties

    International Nuclear Information System (INIS)

    Malek, M.F.; Mamat, M.H.; Khusaimi, Z.; Sahdan, M.Z.; Musa, M.Z.; Zainun, A.R.; Suriani, A.B.; Md Sin, N.D.; Abd Hamid, S.B.; Rusop, M.

    2014-01-01

    Highlights: • Minimum stress of highly c-axis oriented ZnO was grown at suitable deposition speed. • The ZnO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZnO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on deposition speed. -- Abstract: Zinc oxide (ZnO) thin films have been deposited onto glass substrates at various deposition speeds by a sonicated sol–gel dip-coating technique. This work studies the effects of deposition speed on the crystallisation behaviour and optical and electrical properties of the resulting films. X-ray diffraction (XRD) analysis showed that thin films were preferentially oriented along the (0 0 2) c-axis direction of the crystal. The transformation sequence of strain and stress effects in ZnO thin films has also been studied. The films deposited at a low deposition speed exhibited a large compressive stress of 0.78 GPa, which decreased to 0.43 GPa as the deposition speed increased to 40 mm/min. Interestingly, the enhancement in the crystallinity of these films led to a significant reduction in compressive stress. All films exhibited an average transmittance of greater than 90% in the visible region, with absorption edges at ∼380 nm. The photoluminescence (PL) measurements indicated that the intensity of the emission peaks varied significantly with deposition speed. The optical band gap energy (E g ) was evaluated as 3.276–3.289 eV, which increased with decreasing compressive stress along the c-axis. The energy band gap of the resulting ZnO films was found to be strongly influenced by the preferred c-axis (0 0 2) orientation

  10. Oriented thin films of Na {sub 0.6}CoO {sub 2} and Ca {sub 3}Co {sub 4}O {sub 9} deposited by spin-coating method on polycrystalline substrate

    Energy Technology Data Exchange (ETDEWEB)

    Buršík, J., E-mail: bursik@iic.cas.cz [Institute of Inorganic Chemistry ASCR, 250 68 Řež near Prague (Czech Republic); Soroka, M. [Institute of Inorganic Chemistry ASCR, 250 68 Řež near Prague (Czech Republic); Knížek, K.; Hirschner, J.; Levinský, P.; Hejtmánek, J. [Institute of Physics ASCR, Cukrovarnická 10, 162 00 Prague 6 (Czech Republic)

    2016-03-31

    Thin film of two thermoelectric materials, Na {sub x}CoO {sub 2} (x ~ 0.6) and Ca {sub 3}Co {sub 4}O {sub 9}, was deposited using the sol–gel spin-coating method on a polycrystalline yttria-stabilized zirconia (YSZ) substrate. Despite the polycrystalline character of the substrate, the c-axis preferred orientation was obtained, suggesting self-assembly growth mechanism. The deposition procedure used offers several benefits, namely simplicity, high deposition rate, low fabrication cost as well as low price of the substrate, and low thermal conductivity of the substrate suitable for characterization of thermoelectric properties and for applications. The thermoelectric properties of the thin films are comparable with bulk materials. The samples exhibit power factor 0.23 - 0.26 × 10{sup -3} W ⋅ m {sup -1} ⋅ K {sup -2} at 750 K. - Highlights: • Thin film of thermoelectric cobaltates was deposited using the spincoating method. • The c-axis preferred orientation was obtained on polycrystalline YSZ substrate. • Benefits of the chosen procedure are simplicity, low cost, and low thermal conductivity of the substrate.

  11. Polarized emission from light-emitting electrochemical cells using uniaxially oriented polymer thin films of poly(9,9-dioctylfluorene-co-bithiophene)

    Science.gov (United States)

    Miyazaki, Masumi; Sakanoue, Tomo; Takenobu, Taishi

    2018-03-01

    Uniaxially oriented poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) films were prepared on rubbed polyimide substrates and applied to emitting layers of light-emitting electrochemical cells (LECs). The layered structure of the uniaxially oriented F8T2 film and ionic liquid electrolytes enabled us to demonstrate LEC operations with high anisotropic characteristics both in emission and charge transport. Polarized electroluminescence (EL) from electrochemically induced p-n junctions in the uniaxially oriented F8T2 was obtained. The dichroic ratios of EL were the same as those of photoluminescence, suggesting that the doping process into the oriented F8T2 did not interrupt the polymer ordering. This indicates the usefulness of the layered structure of the polymer/electrolyte for the fabrication of LECs based on highly oriented polymer films. In addition, uniaxially oriented F8T2 was found to show reduced threshold energy in optically pumped amplified spontaneous emission. These demonstrations suggest the advantage of uniaxially oriented polymer-based LECs for potential application in future electrically pumped lasers.

  12. Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4

    Science.gov (United States)

    Shibata, Yosei; Tsutsumi, Jun'ya; Matsuoka, Satoshi; Matsubara, Koji; Yoshida, Yuji; Chikamatsu, Masayuki; Hasegawa, Tatsuo

    2015-04-01

    We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10-2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

  13. Growth and characterization of thin oriented Co3O4 (111) films obtained by decomposition of layered cobaltates NaxCoO2

    Czech Academy of Sciences Publication Activity Database

    Buršík, Josef; Soroka, Miroslav; Kužel, R.; Mika, Filip

    2015-01-01

    Roč. 227, JUL (2015), s. 17-24 ISSN 0022-4596 R&D Projects: GA ČR GA13-03708S; GA ČR(CZ) GA14-18392S Institutional support: RVO:61388980 ; RVO:68081731 Keywords : Cobalt oxides * Spinels * Layered cobaltates * Chemical solution deposition * Thin films Subject RIV: CA - Inorganic Chemistry; JA - Electronics ; Optoelectronics, Electrical Engineering (UPT-D) Impact factor: 2.265, year: 2015

  14. Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)

    2017-08-01

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.

  15. Out-of-substrate plane orientation control of thin YBa2Cu3O x films on NdGaO3 tilted-axes substrates

    International Nuclear Information System (INIS)

    Mozhaev, Peter B.; Mozhaeva, Julia E.; Bdikin, Igor K.; Kotelyanskii, Iosif M.; Lusanov, Valery A.; Hansen, Jorn Bindslev; Jacobsen, Claus S.; Kholkin, Andrey L.

    2006-01-01

    Epitaxial heterostructures YBa 2 Cu 3 O x (YBCO)/CeO 2 /NdGaO 3 were prepared on tilted-axes NdGaO 3 substrates using laser ablation technique. Morphology, crystal structure and electrical properties of the obtained films were characterized. The seeding mechanisms are affected by the tilt angle, resulting in superior YBCO films on NdGaO 3 substrates in an intermediate range of tilt angles of 6-14 o . The introduction of CeO 2 layer leads to change of the YBCO film orientation: at low deposition rate c-oriented films are formed, while at high deposition rates the film grows with c-axis tilted along the [1 1 0] NdGaO 3 direction. Bi-epitaxial films and structures were prepared by removal of part of the CeO 2 layer using ion-beam milling

  16. Oriented thin films of Na0.6CoO2 and Ca3Co4O9 deposited by spin-coating method on polycrystalline substrate

    Czech Academy of Sciences Publication Activity Database

    Buršík, Josef; Soroka, Miroslav; Knížek, Karel; Hirschner, Jan; Levinský, Petr; Hejtmánek, Jiří

    2016-01-01

    Roč. 603, MAR (2016), s. 400-403 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GA14-18392S; GA ČR(CZ) GA13-03708S Institutional support: RVO:61388980 ; RVO:68378271 Keywords : Cobaltates * Thermoelectrics * NaxCoO2 * Ca3Co4O9 * Thin film s * ZrO2 Subject RIV: CA - Inorganic Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.879, year: 2016

  17. Ultrahigh coercivity and core-shell microstructure achieved in oriented Nd-Fe-B thin films diffusion-processed with Dy-based alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Tongbo; Zhou, Xiaoqian; Yu, Dedong; Fu, Yanqing; Cui, Weibin [Northeastern University, Key Laboratory of Electromagnetic Processing of Materials (EPM), Ministry of Education, Shenyang (China); Northeastern University, Department of Physics and Chemistry of Materials, School of Materials Science and Engineering, Shenyang (China); Li, Guojian; Wang, Qiang [Northeastern University, Key Laboratory of Electromagnetic Processing of Materials (EPM), Ministry of Education, Shenyang (China)

    2017-01-15

    Ultrahigh ambient coercivities of ∝4 T were achieved in Nd-Fe-B benchmark thin film with coercivity of 1.06 T by diffusion-processing with Dy, Dy{sub 70}Cu{sub 30} and Dy{sub 80}Ag{sub 20} alloy layer. High texture and good squareness were obtained. In triple-junction regions, Dy element was found to be immiscible with Nd element. Microstructure observation indicated the typical gradient elementary distribution. Unambiguous core/shell microstructure was characterized by transition electron microscopy. Due to the enhanced ambient coercivity, the coercivity temperature stability was also substantially increased. (orig.)

  18. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Monteagudo-Lerma, L.; Naranjo, F.B.; Gonzalez-Herraez, M. [Departamento de Electronica, Escuela Politecnica, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares (Spain); Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2012-03-15

    We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al{sub 2}O{sub 3}) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. In Situ Studies of the Temperature-Dependent Surface Structure and Chemistry of Single-Crystalline (001)-Oriented La 0.8 Sr 0.2 CoO 3−δ Perovskite Thin Films

    KAUST Repository

    Feng, Zhenxing; Crumlin, Ethan J.; Hong, Wesley T.; Lee, Dongkyu; Mutoro, Eva; Biegalski, Michael D.; Zhou, Hua; Bluhm, Hendrik; Christen, Hans M.; Shao-Horn, Yang

    2013-01-01

    Perovskites are used to promote the kinetics of oxygen electrocatalysis in solid oxide fuel cells and oxygen permeation membranes. Little is known about the surface structure and chemistry of perovskites at high temperatures and partial oxygen pressures. Combining in situ X-ray reflectivity (XRR) and in situ ambient pressure X-ray photoelectron spectroscopy (APXPS), we report, for the first time, the evolution of the surface structure and chemistry of (001)-oriented perovskite La0.8Sr0.2CoO 3-δ (LSC113) and (La0.5Sr 0.5)2CoO4+δ (LSC214)-decorated LSC113 (LSC113/214) thin films as a function of temperature. Heating the (001)-oriented LSC113 surface leads to the formation of surface LSC214-like particles, which is further confirmed by ex situ Auger electron spectroscopy (AES). In contrast, the LSC113/214 surface, with activities much higher than that of LSC 113, is stable upon heating. Combined in situ XRR and APXPS measurements support that Sr enrichment may occur at the LSC113 and LSC214 interface, which can be responsible for its markedly enhanced activities. © 2013 American Chemical Society.

  20. In Situ Studies of the Temperature-Dependent Surface Structure and Chemistry of Single-Crystalline (001)-Oriented La 0.8 Sr 0.2 CoO 3−δ Perovskite Thin Films

    KAUST Repository

    Feng, Zhenxing

    2013-05-02

    Perovskites are used to promote the kinetics of oxygen electrocatalysis in solid oxide fuel cells and oxygen permeation membranes. Little is known about the surface structure and chemistry of perovskites at high temperatures and partial oxygen pressures. Combining in situ X-ray reflectivity (XRR) and in situ ambient pressure X-ray photoelectron spectroscopy (APXPS), we report, for the first time, the evolution of the surface structure and chemistry of (001)-oriented perovskite La0.8Sr0.2CoO 3-δ (LSC113) and (La0.5Sr 0.5)2CoO4+δ (LSC214)-decorated LSC113 (LSC113/214) thin films as a function of temperature. Heating the (001)-oriented LSC113 surface leads to the formation of surface LSC214-like particles, which is further confirmed by ex situ Auger electron spectroscopy (AES). In contrast, the LSC113/214 surface, with activities much higher than that of LSC 113, is stable upon heating. Combined in situ XRR and APXPS measurements support that Sr enrichment may occur at the LSC113 and LSC214 interface, which can be responsible for its markedly enhanced activities. © 2013 American Chemical Society.

  1. SHMUTZ & PROTON-DIAMANT H + Irradiated/Written-Hyper/Super-conductivity(HC/SC) Precognizance/Early Experiments Connections: Wet-Graphite Room-Tc & Actualized MgB2 High-Tc: Connection to Mechanical Bulk-Moduli/Hardness: Diamond Hydrocarbon-Filaments, Disorder, Nano-Powders:C,Bi,TiB2,TiC

    Science.gov (United States)

    Wunderman, Irwin; Siegel, Edward Carl-Ludwig; Lewis, Thomas; Young, Frederic; Smith, Adolph; Dresschhoff-Zeller, Gieselle

    2013-03-01

    SHMUTZ: ``wet-graphite''Scheike-....[Adv.Mtls.(7/16/12)]hyper/super-SCHMUTZ-conductor(S!!!) = ``wet''(?)-``graphite''(?) = ``graphene''(?) = water(?) = hydrogen(?) =ultra-heavy proton-bands(???) = ...(???) claimed room/high-Tc/high-Jc superconductOR ``p''-``wave''/ BAND(!!!) superconductIVITY and actualized/ instantiated MgB2 high-Tc superconductors and their BCS- superconductivity: Tc Siegel[ICMAO(77);JMMM 7,190(78)] connection to SiegelJ.Nonxline-Sol.40,453(80)] disorder/amorphous-superconductivity in nano-powders mechanical bulk/shear(?)-moduli/hardness: proton-irradiated diamond, powders TiB2, TiC,{Siegel[Semis. & Insuls.5:39,47, 62 (79)])-...``VS''/concommitance with Siegel[Phys.Stat.Sol.(a)11,45(72)]-Dempsey [Phil.Mag. 8,86,285(63)]-Overhauser-(Little!!!)-Seitz-Smith-Zeller-Dreschoff-Antonoff-Young-...proton-``irradiated''/ implanted/ thermalized-in-(optimal: BOTH heat-capacity/heat-sink & insulator/maximal dielectric-constant) diamond: ``VS'' ``hambergite-borate-mineral transformable to Overhauser optimal-high-Tc-LiBD2 in Overhauser-(NW-periodic-table)-Land: CO2/CH4-ETERNAL-sequestration by-product: WATER!!!: physics lessons from

  2. Crystallographic orientations and electrical properties of Bi sub 3 sub . sub 4 sub 7 La sub 0. sub 8 sub 5 Ti sub 3 O sub 1 sub 2 thin films on Pt/Ti/SiO sub 2 /Si and Pt/SiO sub 2 /Si substrates

    CERN Document Server

    Ryu, S O; Lee, W J

    2003-01-01

    We report on the crystallization and electrical properties of Bi sub 3 sub . sub 4 sub 7 La sub 0 sub . sub 8 sub 5 Ti sub 3 O sub 1 sub 2 (BLT) thin films for possible ferroelectric non-volatile memory applications. The film properties were found to be strongly dependent on process conditions especially on the intermediate heat treatment conditions. The crystallographic orientation of the films showed sharp changes at the intermediate rapid thermal annealing (RTA) temperature of 450degC. Below 450degC, BLT thin films have (117) orientation while they have preffered c-axis orientation above 450degC. We found that RTA conditions of the first coating layer play a major role in determining the entire crystallographic orientation of the films. The films also showed of ferroelectric hysterisis behavior strongly dependent on RTA treatment. In fact, the remanent polarization of Bi sub 3 sub . sub 4 sub 6 sub 5 La sub 0 sub . sub 8 sub 5 Ti sub 3 O sub 1 sub 2 thin films having (001) preferred crystallographic orient...

  3. Effects of the crystallographic orientation of the Al2O3 substrate on the structural and the optical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Lee, Chongmu; Park, Yeonkyu; Kim, Kyungha

    2006-01-01

    The structure and the optical properties of ZnO thin films grown on (0002) C-plane, (1120) A-plane, and (1012) R-plane sapphire substrates by using atomic layer epitaxy (ALE) were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and photoluminescence analysis (PL) techniques. The ZnO film grown on the C-plane sapphire substrate has the smallest full width at half maximum (FWHM) values for both the X-ray (0002) diffraction peak and the photoluminescence peak for near-band-edge emission whereas that grown on the R-plane sapphire substrate has the largest FWHM values. On the other hand, the ZnO film grown on the C-plane sapphire substrate has the strong texture of the c-axis but the roughest surface while those grown on the R- and the C-plane sapphire substrates have smoother surfaces but do not have the texture of the c-axis.

  4. Control of Nanoplane Orientation in voBN for High Thermal Anisotropy in a Dielectric Thin Film: A New Solution for Thermal Hotspot Mitigation in Electronics.

    Science.gov (United States)

    Cometto, Olivier; Samani, Majid K; Liu, Bo; Sun, Shuangxi; Tsang, Siu Hon; Liu, Johan; Zhou, Kun; Teo, Edwin H T

    2017-03-01

    High anisotropic thermal materials, which allow heat to dissipate in a preferential direction, are of interest as a prospective material for electronics as an effective thermal management solution for hot spots. However, due to their preferential heat propagation in the in-plane direction, the heat spreads laterally instead of vertically. This limitation makes these materials ineffective as the density of hot spots increases. Here, we produce a new dielectric thin film material at room temperature, named vertically ordered nanocrystalline h-BN (voBN). It is produced such that its preferential thermally conductive direction is aligned in the vertical axis, which facilitates direct thermal extraction, thereby addressing the increasing challenge of thermal crosstalk. The uniqueness of voBN comes from its h-BN nanocrystals where all their basal planes are aligned in the direction normal to the substrate plane. Using the 3ω method, we show that voBN exhibits high anisotropic thermal conductivity (TC) with a 16-fold difference between through-film TC and in-plane TC (respectively 4.26 and 0.26 W·m -1 ·K -1 ). Molecular dynamics simulations also concurred with the experimental data, showing that the origin of this anisotropic behavior is due to the nature of voBN's plane ordering. While the consistent vertical ordering provides an uninterrupted and preferred propagation path for phonons in the through-film direction, discontinuity in the lateral direction leads to a reduced in-plane TC. In addition, we also use COMSOL to simulate how the dielectric and thermal properties of voBN enable an increase in hot spot density up to 295% compared with SiO 2 , without any temperature increase.

  5. Applications of the rotating orientation XRD method to oriented materials

    International Nuclear Information System (INIS)

    Guo Zhenqi; Li Fei; Jin Li; Bai Yu

    2009-01-01

    The rotating orientation x-ray diffraction (RO-XRD) method, based on conventional XRD instruments by a modification of the sample stage, was introduced to investigate the orientation-related issues of such materials. In this paper, we show its applications including the determination of single crystal orientation, assistance in crystal cutting and evaluation of crystal quality. The interpretation of scanning patterns by RO-XRD on polycrystals with large grains, bulk material with several grains and oriented thin film is also presented. These results will hopefully expand the applications of the RO-XRD method and also benefit the conventional XRD techniques. (fast track communication)

  6. Highly oriented as-deposited superconducting laser ablated thin films of Y1Ba2Cu3O/sub 7-//sub δ/ on SrTiO3, zirconia, and Si substrates

    International Nuclear Information System (INIS)

    Koren, G.; Polturak, E.; Fisher, B.; Cohen, D.; Kimel, G.

    1988-01-01

    KrF excimer laser ablation of an Y 1 Ba 2 Cu 3 O/sub 7-//sub δ/ pellet in 0.1--0.2 Torr of O 2 ambient was used to deposit thin superconducting films onto SrTiO 3 , yttria-stabilized zirconia (YSZ), and silicon substrates at 600--700 0 C. The as-deposited 1-μm-thick films at 650--700 0 C substrate temperature were superconducting, without further high-temperature annealing. All films had a similar T/sub c/ onset of ∼92 K but different zero-resistance T/sub c/ of 90, 85, and 70 K for the films on SrTiO 3 , YSZ, and Si substrates, respectively. Angular x-ray diffraction analysis showed that all the films were highly oriented with the c axis perpendicular to their surface. Critical current densities at 77 K were about 40 000 and 10 000 A/cm 2 for the films on SrTiO 3 and YSZ, respectively. Smooth surface morphology was observed in all films, with occasional defects and cracks in the films on YSZ, which seems to explain the lower critical current in these films

  7. Unconventional conventional superconductivity in MgB2

    Science.gov (United States)

    Mazin, Igor

    2002-03-01

    State-of-the-art numerical estimates of the electron-phonon coupling (EPC) constant are of the order of 0.8, which is just a little too low for Tc=39 K. Furthermore, there are indication that this conventional picture faces some problems: (a) specific heat suggests EPC even smaller that the calculatons (b) there is evidence of a gap smaller than 3.5 Tc, and of more than one gap (c) Low-temperature thermodynamics disagrees with the simple BCS picture. There are also theoretical indications of interesting deviations from the standard Eliashberg theory: (1) most of the coupling comes from interaction of just two phonons with two (out of four) bands. (2) The phonons in question are strongly anharmonic (3) Very unusually, nonlinear coupling of these phonons with electrons (i.e., two-phonon exchange) is stronger that the linear coupling. (4) Calculations predict two considerably different order parameters for the two sets of bands. This multigap scenario explains naturally a number of puzzling experiments, but seems to be at odds with the lack of any correlation between the residual resistivity and Tc. One can reconcile these, though, if the defect scattering occurs primarily in the intraband channels. This is supported by chemical arguments and by recent optical experiments. Furthermore, the hypothesis of two qualitatively different scattering rates for the two types of bands is consistent with a number of otherwise hard to explain transport measurements.

  8. Electronic structure and superconductivity of MgB2

    Indian Academy of Sciences (India)

    Unknown

    High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India. Abstract. Results ... compared to the experimentally determined values of these quantities. ... that spectroscopies which probe the superconducting gap.

  9. German Orientalism

    OpenAIRE

    Margaret Olin

    2011-01-01

    Review of: Suzanne L. Marchand, German Orientalism in the Age of Empire: Religion, Race and Scholarship, Cambridge and Washington, D.C.: Cambridge University Press, 2009. This analysis of Suzanne L. Marchand’s German Orientalism in the Age of Empire: Religion, Race and Scholarship reads her contribution in part against the background of Edward Said’s path breaking book Orientalism. Differences lie in her more expansive understanding of the term ‘Oriental’ to include the Far East and her conce...

  10. Orienteering injuries

    OpenAIRE

    Folan, Jean M.

    1982-01-01

    At the Irish National Orienteering Championships in 1981 a survey of the injuries occurring over the two days of competition was carried out. Of 285 individual competitors there was a percentage injury rate of 5.26%. The article discusses the injuries and aspects of safety in orienteering.

  11. Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

    Science.gov (United States)

    Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

    2017-12-01

    This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

  12. Effects of small magnetic fields on the critical current of thin films

    International Nuclear Information System (INIS)

    Passos, Wagner de Assis Cangussu; Lisboa-Filho, Paulo Noronha; Ortiz, Wilson Aires; Kang, W.N.; Choi, Eun-Mi; Hyeong-Jin, Kim; Lee, Sung-Ik Lee

    2002-01-01

    Full text: Magnetic fields applied perpendicularly to superconducting thin films may produce dendritic patterns, where penetrated and Meissner regions coexist, as observed in Nb, YBaCuO and MgB 2 [1]. A temperature-dependent limiting-field, Hd(T), separates the dendritic mode from a critical-state-like penetration regime. Due to large demagnetizing factors in the perpendicular geometry, small fields may be enough to drive portions of the sample into the mixed state. Lack of symmetry and local defects might then permeate the dendritic mode. Hd(T) is related[2] to the bulk lower critical field, Hc1, which depends on the in-plane current density, J. Not surprisingly, Hd is depressed by J[3]. The dendritic mode can be detected by the AC-susceptibility: penetrated fingers act as intergranular material, and the imaginary component peaks at Tc-inter(J). Films of 0.2-0.4 microns, with millimeter lateral sizes, develop dendrites when submitted to Earth's field[2], what limits the critical current, J c . This contribution studies how J c is affected by field-induced granularity in thin films. 1. C. A. Duran et al., PRB 52 (1995) 75; P. Leiderer et al., PRL. 71 (1993) 2646; T.H. Johansen et al., Supercond. Sci. Technol. 14 (2001) 1. 2. W. A. Ortiz et al., Physica C 361 (2001) 267. 3. A. V. Bobyl et al., cond-mat/0201260, submitted to APL

  13. Crystal orientation of monoclinic β-Ga2O3 thin films formed on cubic MgO substrates with a γ-Ga2O3 interfacial layer

    Science.gov (United States)

    Nakagomi, Shinji; Kokubun, Yoshihiro

    2017-12-01

    The crystal orientation relationship between β-Ga2O3 and MgO in β-Ga2O3 thin films prepared on (1 0 0), (1 1 1), and (1 1 0) MgO substrates was investigated by X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The γ-Ga2O3 interfacial layer was present between β-Ga2O3 and MgO acted as a buffer to connect β-Ga2O3 on MgO. The following conditions were satisfied under each case: β-Ga2O3 (1 0 0)||MgO (1 0 0) and β-Ga2O3 [0 0 1]||MgO 〈0 1 1〉 for the formation of β-Ga2O3 on (1 0 0) MgO, and β-Ga2O3 (2 bar 0 1)||MgO (1 1 1) for the formation of β-Ga2O3 on (1 1 1) MgO, as well as each condition of β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 1 bar 1 0 ] (0 0 1), β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 0 1 bar 1 ] (1 0 0), and β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 1 0 1 bar ] (0 1 0). β-Ga2O3 (1 bar 0 2)||MgO(1 1 0) and β-Ga2O3 [0 1 0] ⊥ MgO [0 0 1] for β-Ga2O3 formed on (1 1 0) MgO. The β-Ga2O3 formed on (1 1 1) MgO at 800 °C exhibited a threefold structure. The β-Ga2O3 formed on (1 1 0) MgO had a twofold structure but different by 90° from the result reported previously.

  14. Influence of the oxygen pressure on the preferred orientation and optical properties of the pulsed-laser deposited Mn{sub 1.56}Co{sub 0.96}Ni{sub 0.48}O{sub 4±δ} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Wenwen [Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Gao, Bo [Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011 (China); Jiang, Chunping, E-mail: cpjiang2008@sinano.ac.cn [Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics of CAS, Suzhou 215123 (China); Chang, Aimin, E-mail: changam@ms.xjb.ac.cn [Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011 (China)

    2015-11-25

    Mn{sub 1.56}Co{sub 0.96}Ni{sub 0.48}O{sub 4±δ} (MCN) thin films with different oxygen pressures (in the range of 2 × 10{sup −4} to 2 Pa) are prepared on Si(100)/SiO{sub x} substrates by pulsed laser deposition technique. Effects of oxygen pressures on the microstructure and optical properties of the prepared thin films are investigated in detail. The grain sizes of films gradually decrease and the preferential orientation of the MCN films change from (400) to (113) as the oxygen pressure increases. The x-ray photoelectron spectroscopy results show that the composition of these films is proximity to that of the bulk material. In addition, the Mn{sup 3+}/Mn{sup 4+} pairs increase with an increase in the oxygen pressures increase. From spectroscopic ellipsometer spectroscopy, it is found that both the refractive index n and extinction coefficient k of the (400)-oriented films have no obvious peaks, whereas in the (113)-oriented films, peaks are exist. This feature typically originates from a change in the crystal structure as oxygen pressures increase. Furthermore, the Raman active mode (around ca. 650 cm{sup −1}) of (400) films almost disappears, whilst the active mode in (113) films remain. - Highlights: • The Mn{sub 1.56}Co{sub 0.96}Ni{sub 0.48}O{sub 4-δ} (MCN) spinel films are deposited by pulsed laser deposition process at different oxygen pressures. • The preferential orientation of the films changes from (400) plane to (113) as the oxygen pressure increases. • The E{sub g} of the (113) film is twice as large as that of the (400) film. • The Raman active mode (around ca. 650 cm{sup −1}) can be observed in the (113) films while not in the (400) film.

  15. Orienteering club

    CERN Multimedia

    Club d'orientation

    2015-01-01

    Course d'orientation La reprise des courses d’orientation était attendue dans la région puisque près de 150 coureurs ont participé à la première épreuve automnale organisée par le club d’orientation du CERN sur le site de La Faucille. Les circuits ont été remportés par Yann Locatelli du club d’Orientation Coeur de Savoie avec 56 secondes d’avance sur Damien Berguerre du club SOS Sallanches pour le parcours technique long, Marie Vuitton du club CO CERN (membre également de l’Equipe de France Jeune) pour le parcours technique moyen avec presque 4 minutes d’avance sur Jeremy Wichoud du club Lausanne-Jorat, Victor Dannecker pour le circuit technique court devant Alina Niggli, Elliot Dannecker pour le facile moyen et Alice Merat sur le facile court, tous membres du club O’Jura. Les résultats comp...

  16. Oriental cholangiohepatitis

    International Nuclear Information System (INIS)

    Scheible, F.W.; Davis, G.B.; California Univ., San Diego, La Jolla

    1981-01-01

    The recent influx of immigrants from Southeast Asia into the United States has increased the likelihood of encountering unusual diseases heretofore rarely seen in this country. Among these disorders is Oriental cholangiohepatitis, a potentially life-threatening process whose early diagnosis is facilitated by roentgenographic findings. Ultrasonography can also provide useful information, although potential pitfalls in diagnosis should be recognized. (orig.)

  17. Oriental cholangiohepatitis

    Energy Technology Data Exchange (ETDEWEB)

    Scheible, F.W.; Davis, G.B.

    1981-07-15

    The recent influx of immigrants from Southeast Asia into the United States has increased the likelihood of encountering unusual diseases heretofore rarely seen in this country. Among these disorders is Oriental cholangiohepatitis, a potentially life-threatening process whose early diagnosis is facilitated by roentgenographic findings. Ultrasonography can also provide useful information, although potential pitfalls in diagnosis should be recognized.

  18. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  19. Orientation Club

    CERN Multimedia

    Club d'orientation

    2014-01-01

    COURSE ORIENTATION Résultats de samedi 10 mai    C’est sur une carte entièrement réactualisée dans les bois de Versoix, que plus de 100 coureurs sont venus participer à la course d’orientation, type longue distance, préparée par des membres du club du CERN. Le terrain plutôt plat nécessitait une orientation à grande vitesse, ce qui a donné les podiums suivants :  Technique long avec 17 postes : 1er Jurg Niggli, O’Jura en 52:48, 2e Beat Muller, COLJ Lausanne-Jorat en 58:02, 3e Christophe Vuitton, CO CERN en 58:19 Technique moyen avec 13 postes : 1er Jean-Bernard Zosso, CO CERN, en 46:05 ; 2e Yves Rousselot, Balise 25 Besançon, en 55:11 ; 3e Laurent Merat, O'Jura, en 55:13 Technique court avec 13 postes : 1er Julien Vuitton, CO CERN en 40:59, 2e Marc Baumgartner, CO CERN en 43:18, 3e Yaelle Mathieu en 51:42 Su...

  20. Orienteering Club

    CERN Multimedia

    Club d'orientation

    2013-01-01

    Courses d’orientation ce printemps Le Club d’orientation du CERN vous invite à venir découvrir la course d’orientation et vous propose, en partenariat avec d’autres clubs de la région, une dizaine de courses populaires. Celles-ci ont lieu les samedis après-midi, elles sont ouvertes à tous, quel que soit le niveau, du débutant au sportif confirmé, en famille ou en individuel, en promenade ou en course. Si vous êtes débutant vous pouvez profiter d’une petite initiation offerte par l’organisateur avant de vous lancer sur un parcours. Divers types de parcours sont à votre choix lors de chaque épreuve : facile court (2-3 km), facile moyen (3-5 km), technique court (3-4 km), technique moyen (4-5 km) et technique long (5-7 km). Les dates à retenir sont les suivantes : Samedi 23 mars: Pully (Vd) Samedi 13 avril: Pougny...

  1. Orienteering club

    CERN Multimedia

    Club d'orientation

    2013-01-01

    Courses d’orientation Le soleil enfin de retour a incité nombre de sportifs et promeneurs à nous rejoindre dans la belle forêt de Challex /Pougny pour la deuxième étape de notre coupe de printemps 2013. Certains sont revenus crottés et fourbus alors que d’autres avaient les joues bien roses après un grand bol d’air frais. Mais tous avaient passé un agréable moment dans la nature. Nous rappelons que nos activités sont ouvertes à tous, jeunes, moins jeunes, sportifs, familles, du CERN ou d’ailleurs, et que le seul inconvénient est que si vous goûtez à la course d’orientation, il vous sera difficile de ne pas y revenir ! Samedi 20 avril 2013, nous serons sur le Mont Mourex (entre Gex et Divonne) pour notre prochaine épreuve et vous y serez les bienvenus. Les inscriptions et les départ...

  2. Orienteering club

    CERN Multimedia

    Club d’Orientation du CERN

    2015-01-01

    Courses d’orientation Nouvelle saison nouveau programme Le Club d’orientation du CERN, en partenariat avec d’autres clubs de la région, vous propose une dizaine de courses populaires comptant pour la coupe Genevoise de printemps: samedi 28 mars: Vernand Dessus samedi 18 avril: Pougny/Challex samedi 25 avril: Chancy/Valleiry samedi 2 mai: Mauvernay samedi 9 mai: Longchaumois samedi 16 mai: Genolier samedi 30 mai: Prevondavaux samedi 6 juin: Biere-Ballens samedi 13 juin: Haut-Jura samedi 20 juin: Bonmont - Finale Ces courses sont ouvertes à tous, quel que soit le niveau, du débutant au sportif confirmé, en famille ou en individuel, en promenade ou en course. Les inscriptions se font sur place le jour de l’épreuve. Si vous êtes débutant, vous pouvez profiter d’une initiation offerte par l’organisateur avant de vous lancer sur un parcours. Le club propose aussi...

  3. Orienteering club

    CERN Multimedia

    Orienteering Club

    2016-01-01

    Course d'orientation Calendrier des courses d’orientation Coupe genevoise d’automne 2016 Samedi 3 septembre : La Faucille (01) Samedi 10 septembre : Prémanon (39) Samedi 17 septembre : Saint-Cergue (VD) Samedi 24 septembre : Jorat / Corcelles (VD) Samedi 1 octobre: Bière - Ballens (VD) -relais Vendredi 14 octobre : Parc Mon Repos (GE) - nocturne Samedi 15 octobre : Terrasse de Genève (74) Samedi 29 octobre : Bonmont (VD) Samedi 5 novembre : Pomier (74) – one-man-relay - Finale   Courses ouvertes à toutes et à tous, sportifs, familles, débutants ou confirmés, du CERN ou d’ailleurs. Cinq circuits disponibles, ceci va du facile court (2 km) adapté aux débutants et aux enfants jusqu’au parcours technique long de 6 km pour les chevronnés en passant par les parcours facile moyen (4&am...

  4. COURSE ORIENTATION

    CERN Multimedia

    Club d'orientation du CERN

    2015-01-01

      Les coureurs d’orientation de la région se sont donné rendez-vous samedi dernier dans les bois de Pougny/Challex lors de l’épreuve organisée par le club d’orientation du CERN. La carte proposée pour les 5 circuits offrait aussi bien un coté très technique avec un relief pentu qu’un coté avec de grandes zones plates à forêt claire. Le parcours technique long comportant 20 postes a été remporté par Beat Muller du COLJ Lausanne en 56:26 devançant Denis Komarov, CO CERN en 57:30 et Yvan Balliot, ASO Annecy en 57:46. Pour les autres circuits les résultats sont les suivants: Technique moyen (13 postes): 1er Joël Mathieu en 52:32 à une seconde du 2e Vladimir Kuznetsov, COLJ Lausanne-Jorat, 3e Jean-Bernard Zosso, CO CERN, en 54:01 Technique court (12 postes): 1er Lennart Jirden, ...

  5. Orienteering Club

    CERN Multimedia

    Club d'Orientation

    2013-01-01

    Course d’orientation Face aux Championnats de France des Clubs à Poitiers, et à une météo hivernale (vent glaciale et pluie), il ne restait qu’une cinquantaine d’orienteurs pour participer à l’épreuve organisée le samedi 25 mai à Grange-Malval. Les participants ont tout de même bien apprécié les 5 circuits proposés par le Satus Genève. Les résultats sont disponibles sur notre site http://cern.ch/club-orientation. En plus des résultats, vous pourrez noter des informations sur la nouvelle école de CO encadrée par B. Barge, Prof. EPS à Ferney-Voltaire pour les jeunes à partir de 6 ans. La prochaine étape de la coupe genevoise se déroulera samedi 1er juin à Morez (39). Epreuve organisée par le club O’Jura&nb...

  6. Orienteering Club

    CERN Multimedia

    Le Club d’orientation du CERN

    2017-01-01

    COURSE ORIENTATION Finale de la coupe d’automne Le club d’orientation du CERN (COC Genève) a organisé sa dernière course populaire de la saison samedi 4 novembre au lieu-dit Les Terrasses de Genève (74). Cette 9e épreuve qui se courait sous la forme d’un One-Man-Relay, clôturait ainsi la coupe genevoise d’automne dont les lauréats sont : Circuit technique long : 1. Julien Vuitton (COC Genève), 2. Berni Wehrle (COC Genève), 3. Christophe Vuitton (COC Genève). Circuit technique moyen : 1. Vladimir Kuznetsov (Lausanne-Jorat), 2. J.-Bernard Zosso (COC Genève), 3. Laurent Merat (O’Jura). Circuit technique court : 1. Thibault Rouiller (COC Genève), 2. exæquo Lennart Jirden (COC Genève) et Katya Kuznetsova (Lausanne-Jorat). Circuit facile moyen : 1. Tituan Barge ...

  7. Orienteering Club

    CERN Multimedia

    Le Club d’orientation du CERN

    2017-01-01

    COURSE ORIENTATION Finale de la coupe d’automne Le club d’orientation du CERN (COC Genève) a organisé sa dernière course populaire de la saison samedi 4 novembre au lieu-dit Les Terrasses de Genève (74). Cette 9e épreuve qui se courait sous la forme d’un One-Man-Relay, clôturait ainsi la coupe genevoise d’automne dont les lauréats sont : Circuit technique long : 1. Julien Vuitton (COC Genève), 2. Berni Wehrle (COC Genève), 3. Christophe Vuitton (COC Genève). Circuit technique moyen : 1. Vladimir Kuznetsov (Lausanne-Jorat), 2. J.-Bernard Zosso (COC Genève), 3. Laurent Merat (O’Jura). Circuit technique court : 1. Thibault Rouiller (COC Genève), 2. exæquo Lennart Jirden (COC Genève) et Katya Kuznetsova (Lausanne-Jorat). Circuit facile moyen : 1. Tituan Barge...

  8. Orienteering Club

    CERN Multimedia

    Club d'Orientation

    2015-01-01

    Course orientation C’est au pied du Salève, proche du Golf de Bosset, que le club d’orientation du CERN (CO CERN) a organisé samedi 19 septembre une nouvelle épreuve comptant pour la Coupe Genevoise d’automne. La zone « des Terrasses de Genève » avait été cartographiée et mise en service l’année dernière. Les participants ont pu apprécier un terrain ludique avec beaucoup de microreliefs, de points d’eau et de gros rochers, le tout au milieu d’une forêt assez claire et agréable à courir. Sur le parcours technique long, le résultat a été très serré puisque Pierrick Merino du club d’Annecy a gagné avec seulement 9 secondes d’avance sur Gaëtan Vuitton (CO CERN) qui confiait avoir perdu beaucoup du te...

  9. Orienteering Club

    CERN Multimedia

    Le Club d’orientation du CERN

    2017-01-01

    Course orientation Les courses d’orientation comptant pour la coupe genevoise de printemps s’enchainent dans la région franco-suisse. Samedi dernier, une bonne centaine de coureurs se sont retrouvés au Mont Mourex où le club du CERN avait préparé la sixième épreuve. A l’issue de la course, les participants confirmaient l’exigence des circuits, à savoir la condition physique et le côté technique du traçage. Le parcours technique long comportant 20 postes a été remporté par Darrell High du Care Vevey en 1:22:38 devançant Beat Muller du COLJ Lausanne-Jorat en 1:25:25 et Alison High également du Care Vevey en 1:28:51. Le circuit technique moyen a été remporté par Christophe Vuitton du CO CERN et le circuit technique court par Claire-Lise Rouiller, CO CERN. Les trois pr...

  10. Orienteering Club

    CERN Multimedia

    Club d'orientation

    2010-01-01

    COURSE D’ORIENTATION La finale de la coupe de printemps Après avoir remporté le challenge club, samedi 29 juin lors du relais inter-club à Lausanne, le Club d’orientation du CERN organisait la dernière étape de la coupe genevoise de printemps samedi 5 juin à Saint-Cergue dans les bois de Monteret (Canton de Vaud). Plus de 100 participants se sont déplacés pour venir participer à la finale et découvrir une toute nouvelle carte dans une forêt vallonnée. Les résultats pour chaque circuit de cette étape sont : Technique long : 1. Jurg Niggli du club O’Jura, 2. Clément Poncet, 3. Oystein Midttun. Technique moyen : 1. Zoltan Trocsanyi CO CERN, 2. Christophe Ingold, 3. Christina Falga. Technique court : 1. Pierre-Andre Baum, CARE Vevey, 2. Emese Szunyog, 3. Solène Balay. Facile moyen : 1. Elisa P...

  11. Club Orientation

    CERN Multimedia

    Club d'orientation

    2014-01-01

      COURSE ORIENTATION   Pas moins de 100 concurrents sont venus s’affronter sur les parcours proposés par le club d’orientation du CERN ce samedi 26 avril lors de la 4e étape de la coupe genevoise de printemps. Les podiums ont été attribués à :  Technique long avec 19 postes : 1er Yvan Balliot, ASO Annecy en 1:01:39 ; 2e Dominique Fleurent, ASO Annecy, en 1:05:12 ; 3e Rémi Fournier, SOS Sallanches, en 1:05:40. Technique moyen avec 14 postes : 1er Jean-Bernard Zosso, CO CERN, en 46:42 ; 2e Céline Zosso, CO CERN, en 50:51 ; 3e Clément Poncet, O’Jura Prémanon, en 51:27. Technique court avec 13 postes : 1er Jaakko Murtomaki, YKV Seinaejoki, en 36:04 ; 2e Marc Baumgartner en 41:27 ; 3e Natalia Niggli, O’Jura Prémanon, en 52:43. Sur les parcours facile moyen et facile court, victoire respectivement de Stéphanie...

  12. Orienteering Club

    CERN Multimedia

    Le Club d’orientation du CERN

    2017-01-01

    Calendrier des courses de la Coupe Genevoise – printemps 2017 Club d'orientation - Julien,  jeune membre du club. Le Club d’orientation du CERN, en partenariat avec d’autres clubs de la région, vous propose une série de courses populaires, qui se dérouleront des deux côtés de la frontière franco-suisse, à savoir : Samedi 1 avril : Pougny/Challex (01) Samedi 8 avril: Ballens (VD) Samedi 22 avril: Apples (VD) Samedi 29 avril: Mont Mussy (01) Samedi 6 mai: Prémanon (39) Samedi 13 mai: Mont Mourex (01) Samedi 20 mai: Prévondavaux (VD) Samedi 10 juin: Chancy/Valleiry (74) Samedi 17 juin: Trélex - Finale (VD) Ces courses sont ouvertes à tous, quel que soit le niveau, du débutant au sportif confirmé, en famille ou en individuel. Les inscriptions sur un des 5 parcours proposés se font sur place le jour de l...

  13. Fabrication and orientation control of highly cation-ordered epitaxial PbSc{sub 0.5}Ta{sub 0.5}O{sub 3} thin films on Si (100)

    Energy Technology Data Exchange (ETDEWEB)

    Chopra, Anuj, E-mail: anujchopraiitm@gmail.com [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); Faculty of Science and Technology, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Alexe, Marin [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Hesse, Dietrich [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany)

    2015-01-28

    Highly cation-ordered (100) and (110)-oriented PbSc{sub 0.5}Ta{sub 0.5}O{sub 3} (PST) films were deposited on buffered Si (100) substrates using pulsed laser deposition. Switching of crystal orientation from (100) to (110) was achieved by replacing the Si (100)/ZrO2:Y2O3 (100)/CeO2 (100)/LaNiO3 (100)/PST (100) heterostructure with Si (100)/ZrO2:Y2O3 (YSZ) (100)/SrRuO3 (110)/PST (110). The out-of-plane and in-plane crystal orientation and internal microstructure of (001) and (110) PST films were analyzed in detail by X-ray diffraction, pole figure measurements, and transmission electron microscopy. XRD superstructure reflections indicate that both (100) and (110) PST films are highly cation-ordered and transmission electron microscopy measurements show nano-domains of 15 nm size. The electrical measurements show that the PST films are ferroelectric and that the ferroelectric properties are linked to the microstructure. We have demonstrated the successful integration of PST films on Si substrates with control on growth orientation; this approach can be extended to other oxides to be integrated on silicon substrates for future device applications.

  14. Orienting hypnosis.

    Science.gov (United States)

    Hope, Anna E; Sugarman, Laurence I

    2015-01-01

    This article presents a new frame for understanding hypnosis and its clinical applications. Despite great potential to transform health and care, hypnosis research and clinical integration is impaired in part by centuries of misrepresentation and ignorance about its demonstrated efficacy. The authors contend that advances in the field are primarily encumbered by the lack of distinct boundaries and definitions. Here, hypnosis, trance, and mind are all redefined and grounded in biological, neurological, and psychological phenomena. Solutions are proposed for boundary and language problems associated with hypnosis. The biological role of novelty stimulating an orienting response that, in turn, potentiates systemic plasticity forms the basis for trance. Hypnosis is merely the skill set that perpetuates and influences trance. This formulation meshes with many aspects of Milton Erickson's legacy and Ernest Rossi's recent theory of mind and health. Implications of this hypothesis for clinical skills, professional training, and research are discussed.

  15. Oriented Approach

    Directory of Open Access Journals (Sweden)

    Seyed Mohammad Moghimi

    2013-12-01

    Full Text Available Promoting productivity is one of the goals of usinginformation technology in organizations. The purpose of this research isexamining the impact of IT on organizational productivity andrecognizing its mechanisms based on process-oriented approach. For thisend, by reviewing the literature of the subject a number of impacts of ITon organizational processes were identified. Then, through interviewswith IT experts, seven main factors were selected and presented in aconceptual model. This model was tested through a questionnaire in 148industrial companies. Data analysis shows that impact of IT onproductivity can be included in the eight major categories: Increasing ofthe Automation, Tracking, Communication, Improvement, Flexibility,Analytic, Coordination and Monitoring in organizational processes.Finally, to improve the impact of information technology onorganizational productivity, some suggestions are presented.

  16. EDITORIAL: Optical orientation Optical orientation

    Science.gov (United States)

    SAME ADDRESS *, Yuri; Landwehr, Gottfried

    2008-11-01

    priority of the discovery in the literature, which was partly caused by the existence of the Iron Curtain. I had already enjoyed contact with Boris in the 1980s when the two volumes of Landau Level Spectroscopy were being prepared [2]. He was one of the pioneers of magneto-optics in semiconductors. In the 1950s the band structure of germanium and silicon was investigated by magneto-optical methods, mainly in the United States. No excitonic effects were observed and the band structure parameters were determined without taking account of excitons. However, working with cuprous oxide, which is a direct semiconductor with a relative large energy gap, Zakharchenya and his co-worker Seysan showed that in order to obtain correct band structure parameters, it is necessary to take excitons into account [3]. About 1970 Boris started work on optical orientation. Early work by Hanle in Germany in the 1920s on the depolarization of luminescence in mercury vapour by a transverse magnetic field was not appreciated for a long time. Only in the late 1940s did Kastler and co-workers in Paris begin a systematic study of optical pumping, which led to the award of a Nobel prize. The ideas of optical pumping were first applied by Georges Lampel to solid state physics in 1968. He demonstrated optical orientation of free carriers in silicon. The detection method was nuclear magnetic resonance; optically oriented free electrons dynamically polarized the 29Si nuclei of the host lattice. The first optical detection of spin orientation was demonstrated by with the III-V semiconductor GaSb by Parsons. Due to the various interaction mechanisms of spins with their environment, the effects occurring in semiconductors are naturally more complex than those in atoms. Optical detection is now the preferred method to detect spin alignment in semiconductors. The orientation of spins in crystals pumped with circularly polarized light is deduced from the degree of circular polarization of the recombination

  17. Determination of the specific site occupation of rare earth additions in Y17SM06Lu07Fe5O12 thin films by the orientation dependence of characteristic x-ray emissions

    International Nuclear Information System (INIS)

    Krishnan, K.M.; Rez, P.; Mishra, R.; Thomas, G.

    1983-11-01

    The orientation dependence of characteristic x-ray emissions have been used to determine specific site occupations of Rare Earth additions in epitaxially grown films of Y 1 7 Sm 0 6 Lu 0 7 Fe 5 O 12 . A theoretical formulation based on the assumption of highly localized inner shell excitations was used not only to predict specific site sensitive orientations, but also to refine experimentally observed data employing a constrained least squares analysis to give probabilities for the occupation of the RE additions in the different crystallographic sites. Thus, it has been shown that in this compound the preference for the RE additions is a predominantly octahedral occupation with a probability greater than or equal to 95%. Some of the assumptions and limitations of the technique have also been discussed

  18. Thin Places

    OpenAIRE

    Lockwood, Sandra Elizabeth

    2013-01-01

    This inquiry into the three great quests of the twentieth century–the South Pole, Mount Everest, and the Moon–examines our motivations to venture into these sublime, yet life-taking places. The Thin Place was once the destination of the religious pilgrim seeking transcendence in an extreme environment. In our age, the Thin Place quest has morphed into a challenge to evolve beyond the confines of our own physiology; through human ingenuity and invention, we reach places not meant to accommod...

  19. Structural and interfacial defects in c-axis oriented LiNbO{sub 3} thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

    Energy Technology Data Exchange (ETDEWEB)

    Shandilya, Swati; Sreenivas, K; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Miranda House, University of Delhi, Delhi 110007 (India)

    2009-05-07

    Highly c-axis oriented LiNbO{sub 3} films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO{sub 3} films under the optimized deposition condition. An extra peak at 905 cm{sup -1} was observed in the Raman spectra of LiNbO{sub 3} film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO{sub 3} films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO{sub 3} single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO{sub 3} film and the Al : ZnO layer.

  20. Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

    International Nuclear Information System (INIS)

    Shandilya, Swati; Sreenivas, K; Gupta, Vinay; Tomar, Monika

    2009-01-01

    Highly c-axis oriented LiNbO 3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO 3 films under the optimized deposition condition. An extra peak at 905 cm -1 was observed in the Raman spectra of LiNbO 3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO 3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO 3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO 3 film and the Al : ZnO layer.

  1. Magnetotransport properties of c-axis oriented La0.7Sr0.3MnO3 thin films on MgO-buffered SiO2/Si substrates

    International Nuclear Information System (INIS)

    Kang, Young-Min; Ulyanov, Alexander N.; Shin, Geo-Myung; Lee, Sung-Yun; Yoo, Dae-Gil; Yoo, Sang-Im

    2009-01-01

    c-axis oriented La 0.7 Sr 0.3 MnO 3 (LSMO) films on MgO-buffered SiO 2 /Si substrates were prepared, and their texture, microstructure, and magnetotransport properties were studied and compared to epitaxial LSMO/MgO (001) and polycrystalline LSMO/SiO 2 /Si films. c-axis oriented MgO buffer layers were obtained on amorphous SiO 2 layer through rf sputter deposition at low substrate temperature and consequent postannealing processes. In situ pulsed laser deposition-grown LSMO films, deposited on the MgO layer, show strong c-axis texture, but no in-plane texture. The c-axis oriented LSMO films which are magnetically softer than LSMO/SiO 2 /Si films exhibit relatively large low field magnetoresistance (LFMR) and sharper MR drop at lower field. The large LFMR is attributed to a spin-dependent scattering of transport current at the grain boundaries

  2. Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

    Science.gov (United States)

    Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

    2009-05-01

    Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

  3. Low-field vortex dynamics in various high-Tc thin films

    Indian Academy of Sciences (India)

    Abstract. We present a novel ac susceptibility technique for the study of vortex creep in supercon- ducting thin films. With this technique we study the dynamics of dilute vortices in c-axis oriented. Y-123, Hg-1212, and Tl-1212 thin films, as well as a-axis oriented Hg-1212 thin films. Results on the Hg-1212 and Tl-1212 thin ...

  4. Orienteering Club

    CERN Multimedia

    Club d'orientation

    2013-01-01

    Course d'orientation Le coup d’envoi de la coupe genevoise a été donné samedi 31 août dans les bois de Combe Froide à Prémanon. Plus de 150 coureurs avaient fait le déplacement. Les parcours facile court, facile moyen et technique court ont été remportés par des coureurs du club O’Jura - Ulysse Dannecker, Léo Lonchampt, Franck Lonchampt, le technique moyen par Pekka Marti du club Ol Biel Seeland et le technique long par Térence Risse du CA Rosé – également membre de l’équipe nationale suisse des moins de 20 ans. Pour le club du CERN, les meilleures résultats ont été obtenus pas Emese Szunyog sur technique court et Marie Vuitton sur technique moyen avec une 4e place. La prochaine course aura lieu samedi 14 septembre à La Faucille. Le club propose aussi...

  5. Orienteering club

    CERN Multimedia

    Club d'orientation

    2014-01-01

    Course d'orientation Finale de la coupe d’automne La dernière épreuve de la coupe d’automne organisée par le club s’est déroulée ce samedi 1er novembre avec une course type «one-man-relay» dans la forêt de Trelex (Vd). Les concurrents des circuits techniques devaient parcourir trois boucles et ceux des circuits «faciles» deux boucles, avec changements de carte. Le parcours technique long a été remporté par un membre du club, Berni Wehrle. A l’issue de cette course, le Président du club, L. Jirden annonçait le classement général de la coupe d’automne, basé sur les 6 meilleurs résultats de la saison : Circuit technique long : 1er Juerg Niggli (O’Jura), 2e Berni Wehrle, 3e Beat Mueller. Circuit technique moyen : 1er Laurent Merat (O&r...

  6. Orienteering club

    CERN Multimedia

    Club d'orientation

    2013-01-01

    Course d'orientation Finale de la coupe genevoise Rapide et méthodique, voilà les qualités dont il fallait faire preuve pour remporter la dernière étape de la coupe organisée par le club du CERN dans les bois de Monteret. Il s’agissait d’une course au score où chaque concurrent disposait d’un temps imparti pour poinçonner le maximum de balises. Le parcours technique a été remporté par Tomas Shellman et le parcours facile par Victor Dannecker. Cette dernière étape était aussi décisive pour la désignation des lauréats de la coupe genevoise de printemps. Les résultats officiels étaient donnés par le président du club, L. Jirden : Circuit Technique Long : Berni Wehrle, Bruno Barge, Edvins Reisons Circuit Technique Moyen : J.-Bernard Zosso, ...

  7. Orienteering Club

    CERN Multimedia

    Club d'Orientation

    2011-01-01

    Course d'orientation Avec la CO en nocturne organisée par le club du CERN vendredi 14 octobre au stade des Eveaux (Ge), et la CO à Savigny (Vd) proposée par le club de Lausanne-Jorat le lendemain, les étapes de la coupe genevoise d’automne s’enchainent rapidement. Il ne reste plus que 3 rendez-vous pour boucler la saison. Les premières places devraient certainement se jouer entre des membres du club du CERN, du O’Jura ou de Lausanne-Jorat. La prochaine course du club est programmée pour samedi 22 octobre à Pomier, près de Cruseilles. L’accueil se fera à partir de 12h30 et les départs s’échelonneront de 13h à 15h. * * * * * * * Nouvelle belle victoire samedi 8 octobre à Saint Cergue du jeune finlandais Ville Keskisaari (COLJ) en 50:56 devant Jürg Niggli (O’Jura) en 1:03:32, et Alexandre...

  8. Orienteering Club

    CERN Document Server

    Club d'orientation

    2013-01-01

    De jour comme de nuit Les amateurs de course d’orientation ont pu s’en donner à cœur joie ce week-end puisqu’ils avaient la possibilité de courir sur deux épreuves en moins de 24 heures. En effet, le club du CERN organisait une course de nuit aux Evaux et la 7e étape de la coupe genevoise se tenait samedi après-midi dans les bois du Grand Jorat à Savigny. Les vainqueurs pour chaque course sont : Technique long CO de nuit: Julien Charlemagne, SOS Sallanches CO samedi: Philipp Khlebnikov, ANCO   Technique moyen CO de nuit: Céline Zosso, CO CERN CO samedi: Pavel Khlebnikov, ANCO Technique court CO de nuit: Colas Ginztburger, SOS Sallanches CO samedi: Victor Kuznetsov, COLJ Lausannne Facile moyen CO de nuit: Gaëtan Rickenbacher, CO CERN CO samedi: Tamas Szoke   Facile court CO de nuit:Oriane Rickenbacher, CO CERN CO samedi: Katya Kuznetsov...

  9. Orienteering Club

    CERN Multimedia

    Club d'Orientation

    2015-01-01

    Course orientation Finale de la coupe genevoise La série des courses de printemps s’est achevée samedi dernier dans les bois de Bonmont (Vaud) avec une épreuve «one-man-relay» organisée par le club. Le vainqueur du parcours technique  long, Yann Locatelli (Club de Chambéry Savoie) a réalisé les deux boucles comportant 24 balises avec presque 6 minutes d’avance sur le second concurrent Domenico Lepori (Club CARE Vevey). Cette dernière étape était aussi décisive pour la désignation des lauréats de la coupe genevoise de printemps, en comptabilisant les 6 meilleurs résultats sur les 10 épreuves. Le podium officiel était donné par le président du club, L. Jirden, qui profitait de l’occasion pour remercier tous les participants et également tous les...

  10. Orienteering Club

    CERN Multimedia

    CLUB D'ORIENTATION

    2013-01-01

    Calendrier de la coupe d’automne Le Club d’orientation du CERN, en partenariat avec d’autres clubs de la région, vous propose, pour cette nouvelle coupe d’automne genevoise, une série de 10 courses. Le club du O’Jura donnera le coup d’envoi le samedi 31 août. Les courses s’enchaîneront selon le calendrier suivant : Samedi 31 août : Prémanon (39) - longue distance Samedi 14 septembre : La Faucille (01) - longue distance Samedi 21 septembre : Saint Cergue (VD) - longue distance Samedi 28 septembre : Ballens (VD) - relais Samedi 5 octobre : La Pile (VD) - longue distance Vendredi 11 octobre : Les Evaux (GE) - nocturne Samedi 12 octobre : Grand Jorat, Savigny (VD) - longue distance Samedi 19 octobre : Terrasses de Genève (74) - longue distance Samedi 26 octobre : Prémanon (39) - longue distance Samedi 2 novembre : Bois Tollot (GE) - score - Finale Les &a...

  11. Orienteering club

    CERN Multimedia

    Club d'orientation

    2014-01-01

    Course d'orientation C’est sous un beau soleil samedi 4 octobre que s’est déroulée la 6e étape de la Coupe genevoise d’automne organisée par le club. Plus d’une centaine de concurrents provenant de 7 clubs de CO avaient fait le déplacement pour courir sur un des cinq parcours proposés dans les bois de Trélex-Génolier (VD). Le podium est le suivant : Technique long (5,9 km, 19 postes) : 1er Jurg Niggli, O’Jura (1:00:02); 2e Berni Wehrle, CO CERN (1:06:44); 3e Konrad Ehrbar, COLJ (1:07:08) Technique moyen (4,8 km, 18 postes) : 1er Christophe Vuitton, CO CERN (54:25); 2e J.B. Zosso, CO CERN (1:01:19); 3e Jeremy Wichoud, COLJ (1:06:21) Technique court (3,8 km, 14 postes) : 1er Julien Vuitton, CO CERN (36:19); 2e Vladimir Kuznetsov, COLJ (48:47); 3e Natalia Niggli, O’Jura (50:38) Facile moyen (3,2 km, 11 postes) : 1ère Alina Niggli, O&...

  12. Orienteering Club

    CERN Multimedia

    Club d'Orientation

    2012-01-01

    Relais inter-club/Challenge Carlo Milan Samedi dernier, lors de l’épreuve de course d’orientation organisée par le club du O’Jura, le moteur de la discipline était l’esprit d’équipe, puisqu’il était question d’un relais inter-club avec le Challenge Carlo Milan. Les clubs avaient aligné leurs coureurs soit sur le relais technique (trois participants) soit sur le relais facile (deux participants). Côté O’Jura, il fallait noter la participation de François Gonon, champion du monde 2011, côté club du CERN, Marie et Gaëtan Vuitton, jeunes espoirs du club, devaient préparer la piste pour lancer le dernier relayeur. Côté Lausanne-Jorat, il fallait compter sur le très jeune Viktor Kuznetsov. Les 31 équipes engagées n’ont pas m&ea...

  13. Orienteering Club

    CERN Multimedia

    Club d'Orientation

    2012-01-01

     Finale de la coupe de printemps   La dernière course d’orientation comptant pour la Coupe de printemps a eu lieu samedi dernier dans le village des Rousses et vers le Fort. Il s’agissait d’un sprint organisé par le club O’Jura. Les temps de course ont avoisiné les 20 minutes que ce soit pour le parcours technique moyen ou technique long. Tous les habitués étaient au rendez-vous pour venir consolider ou améliorer leur place au classement. A l’issue de cette course, le classement général de la Coupe de printemps prenant en compte les 6 meilleurs résultats des 9 courses était établi et les lauréats de chaque catégorie sont les suivants: Circuit technique long : 1er Berni Wehrle, 2e Bruno Barge, 3e Edvins Reisons. Circuit technique moyen : 1er Jean-Bernard Zosso, 2e Cédric Wehrl&...

  14. Orienteering club

    CERN Multimedia

    Club d'orientation

    2010-01-01

    COURSE D’ORIENTATION  De La Rippe à Sauvabellin, la coupe genevoise continue ! Le rendez-vous était donné samedi 8 mai aux amateurs de course d’orientation dans les bois de La Rippe (Canton de Vaud). Cette 6e épreuve était organisée par le Club Satus Grutli de Genève. Il est dommage que les participants n’aient pas été aussi nombreux que lors des dernières courses, les Championnats de France des clubs à Dijon ayant certainement retenus plus d’un compétiteur. La première place est revenue à : – Technique long : Berni Wehrle – Technique moyen : Jean-Bernard Zosso – Technique court : Berni Wehrle – Facile moyen : Peter Troscanyi – Facile court : Claire Droz. Il ne restera plus que deux épreuves ...

  15. Orienteering club

    CERN Multimedia

    Club d'orientation

    2013-01-01

    Courses d’orientation Samedi 20 avril, les organisateurs du Club de CO du CERN ont accueilli au Mont Mourex 70 participants qui n’ont pas hésité à venir malgré la forte bise. Berni Wehrle du CO CERN s’est octroyé la première place en 1:04:49 sur le parcours technique long devant Pyry Kettunen du Saynso Juankoski en 1:06:52, la 3e place revenant à Bruno Barge, CO CERN, à 7 secondes. Les autres parcours ont été remportés par : Technique moyen : 1er Jacques Moisset, Chamonix (47:44), 2e Yves Rousselot, Balise 25 Besançon (57:16), 3e Jean-Bernard Zosso, CO CERN (59:28). Technique court : 1er Victor Kuznetsov, COLJ (51:53), 2e Pierrick Collet, CO CERN (1:12:52), 3e Dominique Balay, CO CERN (1:16:04). Pour les parcours facile moyen et facile court, Ralf Nardini et Léa Nicolas, tous deux du CO CERN, terminaient respectivement premier. Voi...

  16. Thin book

    DEFF Research Database (Denmark)

    En lille bog om teater og organisationer, med bidrag fra 19 teoretikere og praktikere, der deltog i en "Thin Book Summit" i Danmark i 2005. Bogen bidrager med en state-of-the-art antologi om forskellige former for samarbejde imellem teater og organisationer. Bogen fokuserer både på muligheder og...

  17. Structure, deformation, and failure of flow-oriented semicrystalline polymers

    NARCIS (Netherlands)

    Schrauwen, B.A.G.; Breemen, van L.C.A.; Spoelstra, A.B.; Govaert, L.E.; Peters, G.W.M.; Meijer, H.E.H.

    2004-01-01

    This study deals with the influence of processing induced crystalline orientation on the macroscopic deformation and failure behavior of thin samples of polyethylene and polypropylene. Distribution and structure of flow-induced orientations were characterized by optical microscopy, X-ray diffraction

  18. Out-of-substrate plane orientation control of thin YBa{sub 2}Cu{sub 3}O {sub x} films on NdGaO{sub 3} tilted-axes substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mozhaev, Peter B. [Institute of Physics and Technology RAS, Moscow 117218 (Russian Federation) and Department of Physics, Technical University of Denmark, Lyngby, DK-2800 (Denmark)]. E-mail: pbmozh@nm.ru; Mozhaeva, Julia E. [Institute of Physics and Technology RAS, Moscow 117218 (Russian Federation); Department of Physics, Technical University of Denmark, Lyngby, DK-2800 (Denmark); Bdikin, Igor K. [Institute of Solid State Physics RAS, Chernogolovka, Moscow distr., 142432 (Russian Federation); CICECO, University of Aveiro, Aveiro 3810-193 (Portugal); Kotelyanskii, Iosif M. [Institute of Radio Engineering and Electronics RAS, Moscow 125009 (Russian Federation); Lusanov, Valery A. [Institute of Radio Engineering and Electronics RAS, Moscow 125009 (Russian Federation); Hansen, Jorn Bindslev [Department of Physics, Technical University of Denmark, Lyngby, DK-2800 (Denmark); Jacobsen, Claus S. [Department of Physics, Technical University of Denmark, Lyngby, DK-2800 (Denmark); Kholkin, Andrey L. [CICECO, University of Aveiro, Aveiro 3810-193 (Portugal)

    2006-02-01

    Epitaxial heterostructures YBa{sub 2}Cu{sub 3}O {sub x}(YBCO)/CeO{sub 2}/NdGaO{sub 3} were prepared on tilted-axes NdGaO{sub 3} substrates using laser ablation technique. Morphology, crystal structure and electrical properties of the obtained films were characterized. The seeding mechanisms are affected by the tilt angle, resulting in superior YBCO films on NdGaO{sub 3} substrates in an intermediate range of tilt angles of 6-14{sup o}. The introduction of CeO{sub 2} layer leads to change of the YBCO film orientation: at low deposition rate c-oriented films are formed, while at high deposition rates the film grows with c-axis tilted along the [1 1 0] NdGaO{sub 3} direction. Bi-epitaxial films and structures were prepared by removal of part of the CeO{sub 2} layer using ion-beam milling.

  19. Sexual Orientation (For Parents)

    Science.gov (United States)

    ... Staying Safe Videos for Educators Search English Español Sexual Orientation KidsHealth / For Parents / Sexual Orientation What's in this ... orientation is part of that process. What Is Sexual Orientation? The term sexual orientation refers to the gender ( ...

  20. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José ; Burriel, Mó nica

    2010-01-01

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation