Integrated Optoelectronic Networks for Application-Driven Multicore Computing

Science.gov (United States)

2017-05-08

AFRL-AFOSR-VA-TR-2017-0102 Integrated Optoelectronic Networks for Application- Driven Multicore Computing Sudeep Pasricha COLORADO STATE UNIVERSITY...AND SUBTITLE Integrated Optoelectronic Networks for Application-Driven Multicore Computing 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-13-1-0110 5c...and supportive materials with innovative architectural designs that integrate these components according to system-wide application needs. 15

Monocrystalline halide perovskite nanostructures for optoelectronic applications

NARCIS (Netherlands)

Khoram, P.

2018-01-01

Halide perovskites are a promising class of materials for incorporation in optoelectronics with higher efficiency and lower cost. The solution processability of these materials provides unique opportunities for simple nanostructure fabrication. In the first half of the thesis (chapter 2 and 3) we

Electronic and optoelectronic materials and devices inspired by nature

International Nuclear Information System (INIS)

Meredith, P; Schwenn, P E; Bettinger, C J; Irimia-Vladu, M; Mostert, A B

2013-01-01

Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist. (review article)

Computational design of surfaces, nanostructures and optoelectronic materials

Science.gov (United States)

Choudhary, Kamal

Properties of engineering materials are generally influenced by defects such as point defects (vacancies, interstitials, substitutional defects), line defects (dislocations), planar defects (grain boundaries, free surfaces/nanostructures, interfaces, stacking faults) and volume defects (voids). Classical physics based molecular dynamics and quantum physics based density functional theory can be useful in designing materials with controlled defect properties. In this thesis, empirical potential based molecular dynamics was used to study the surface modification of polymers due to energetic polyatomic ion, thermodynamics and mechanics of metal-ceramic interfaces and nanostructures, while density functional theory was used to screen substituents in optoelectronic materials. Firstly, polyatomic ion-beams were deposited on polymer surfaces and the resulting chemical modifications of the surface were examined. In particular, S, SC and SH were deposited on amorphous polystyrene (PS), and C2H, CH3, and C3H5 were deposited on amorphous poly (methyl methacrylate) (PMMA) using molecular dynamics simulations with classical reactive empirical many-body (REBO) potentials. The objective of this work was to elucidate the mechanisms by which the polymer surface modification took place. The results of the work could be used in tailoring the incident energy and/or constituents of ion beam for obtaining a particular chemistry inside the polymer surface. Secondly, a new Al-O-N empirical potential was developed within the charge optimized many body (COMB) formalism. This potential was then used to examine the thermodynamic stability of interfaces and mechanical properties of nanostructures composed of aluminum, its oxide and its nitride. The potentials were tested for these materials based on surface energies, defect energies, bulk phase stability, the mechanical properties of the most stable bulk phase, its phonon properties as well as with a genetic algorithm based evolution theory of

Integrated silicon optoelectronics

CERN Document Server

Zimmermann, Horst

2000-01-01

'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

Terahertz optoelectronics in graphene

International Nuclear Information System (INIS)

Otsuji, Taiichi

2016-01-01

Graphene has attracted considerable attention due to its extraordinary carrier transport, optoelectronic, and plasmonic properties originated from its gapless and linear energy spectra enabling various functionalities with extremely high quantum efficiencies that could never be obtained in any existing materials. This paper reviews recent advances in graphene optoelectronics particularly focused on the physics and device functionalities in the terahertz (THz) electromagnetic spectral range. Optical response of graphene is characterized by its optical conductivity and nonequilibrium carrier energy relaxation dynamics, enabling amplification of THz radiation when it is optically or electrically pumped. Current-injection THz lasing has been realized very recently. Graphene plasmon polaritons can greatly enhance the THz light and graphene matter interaction, enabling giant enhancement in detector responsivity as well as amplifier/laser gain. Graphene-based van der Waals heterostructures could give more interesting and energy-efficient functionalities. (author)

Optoelectronic properties of CC2TA towards a good TADF material

Science.gov (United States)

Mishra, Ashok Kumar

2018-05-01

2,4-bis{f3-(9H-carbazol-9-yl)-9H-carbazol-9-yl}-6-phenyl-1,3,5-triazine (CC2TA) is a triazine derivatives in which the acceptor phenyltriazine unit is used as the central skeleton and donor bicarbazole units are bonded to both ends of the skeleton. Molecular orbital calculations exhibit that the HOMO and LUMO are locally allocated chiefly in the bicarbazole and phenyltriazine units, respectively. There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) CC2TA is one of these reported noble metal-free TADF molecules which offers unique opto electronic properties arising from the reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the CC2TA compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the CC2TA organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).

New pathways in electronics and optoelectronics driven by new physics of nonconventional materials

International Nuclear Information System (INIS)

Kantser, Valeriu

2015-01-01

Nonconventional materials (NCM) - 2D materials and topological insulators (TI) - have opened a gateway to search new physical phenomena and states of the condensed matter as well as to pave new platform of modern technology. This stems on their unique attributes - non equivalence of electronic and dielectric states to vacuum ones, topological protection (reduced backscattering), spin momentum locking property, magnetoelectric coupling, generations of new quasiparticles like Majorana fermions. Increasing the surface state contribution in proportion to the bulk is critical to investigate the surface states and for future innovative device applications. The way to achieve this is to configure NCM into nanostructures, which at the same time in combination with others materials significantly enlarge the variety of new states and phenomena. This article reviews the recent progress made in NCM and nano heterostructures investigation. The state of art of different new scenario of engineering topologically interface states in the TI heterostructures are revealed, in particular by using polarization fields and antiferromagnetic ordering. Some of new proposals for innovative electronic and optoelectronic devices are discussed. (author)

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Directory of Open Access Journals (Sweden)

Bingqi Sun

2018-06-01

Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

Mid-infrared Semiconductor Optoelectronics

CERN Document Server

Krier, Anthony

2006-01-01

The practical realisation of optoelectronic devices operating in the 2–10 µm (mid-infrared) wavelength range offers potential applications in a variety of areas from environmental gas monitoring around oil rigs and landfill sites to the detection of pharmaceuticals, particularly narcotics. In addition, an atmospheric transmission window exists between 3 µm and 5 µm that enables free-space optical communications, thermal imaging applications and the development of infrared measures for "homeland security". Consequently, the mid-infrared is very attractive for the development of sensitive optical sensor instrumentation. Unfortunately, the nature of the likely applications dictates stringent requirements in terms of laser operation, miniaturisation and cost that are difficult to meet. Many of the necessary improvements are linked to a better ability to fabricate and to understand the optoelectronic properties of suitable high-quality epitaxial materials and device structures. Substantial progress in these m...

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

Directory of Open Access Journals (Sweden)

Cheng Chuantong

2017-07-01

Full Text Available Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

Science.gov (United States)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-07-01

Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

Metal Complexes for Organic Optoelectronic Applications

Science.gov (United States)

Huang, Liang

Organic optoelectronic devices have drawn extensive attention by over the past two decades. Two major applications for Organic optoelectronic devices are efficient organic photovoltaic devices(OPV) and organic light emitting diodes (OLED). Organic Solar cell has been proven to be compatible with the low cost, large area bulk processing technology and processed high absorption efficiencies compared to inorganic solar cells. Organic light emitting diodes are a promising approach for display and solid state lighting applications. To improve the efficiency, stability, and materials variety for organic optoelectronic devices, several emissive materials, absorber-type materials, and charge transporting materials were developed and employed in various device settings. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. In this thesis, Chapter 1 provides an introduction to the background knowledge of OPV and OLED research fields presented. Chapter 2 discusses new porphyrin derivatives- azatetrabenzylporphyrins for OPV and near infrared OLED applications. A modified synthetic method is utilized to increase the reaction yield of the azatetrabenzylporphyrin materials and their photophysical properties, electrochemical properties are studied. OPV devices are also fabricated using Zinc azatetrabenzylporphyrin as donor materials. Pt(II) azatetrabenzylporphyrin were also synthesized and used in near infra-red OLED to achieve an emission over 800 nm with reasonable external quantum efficiencies. Chapter 3, discusses the synthesis, characterization, and device evaluation of a series of tetradentate platinum and palladium complexesfor single doped white OLED applications and RGB white OLED applications. Devices employing some of the developed emitters demonstrated impressively high external quantum efficiencies within the range of 22%-27% for various emitter concentrations. And the palladium complex, i

Integrated graphene-based devices for optoelectronic applications

DEFF Research Database (Denmark)

Xiao, Sanshui

Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultralarge absorption bandwidth, and extremely fast material response. Here I present novel integrated grapheneplasmonic waveguide modulator showing high modulation depth, thus giving a promising way...

Optoelectronic device with nanoparticle embedded hole injection/transport layer

Science.gov (United States)

Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

2012-01-03

An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

Optoelectronics circuits manual

CERN Document Server

Marston, R M

2013-01-01

Optoelectronics Circuits Manual covers the basic principles and characteristics of the best known types of optoelectronic devices, as well as the practical applications of many of these optoelectronic devices. The book describes LED display circuits and LED dot- and bar-graph circuits and discusses the applications of seven-segment displays, light-sensitive devices, optocouplers, and a variety of brightness control techniques. The text also tackles infrared light-beam alarms and multichannel remote control systems. The book provides practical user information and circuitry and illustrations.

The Cellulose Nanofibers for Optoelectronic Conversion and Energy Storage

Directory of Open Access Journals (Sweden)

Yongfeng Luo

2014-01-01

Full Text Available Cellulose widely exists in plant tissues. Due to the large pores between the cellulose units, the regular paper is nontransparent that cannot be used in the optoelectronic devices. But some chemical and physical methods such as 2,2,6,6-tetramethylpiperidine-1-oxyl radical (TEMPO oxidation can be used to improve the pores scale between the cellulose units to reach nanometer level. The cellulose nanofibers (CNFs have good mechanical strength, flexibility, thermostability, and low thermal expansion. The paper made of these nanofibers represent a kind of novel nanostructured material with ultrahigh transparency, ultrahigh haze, conductivity, biodegradable, reproducible, low pollution, environment friendly and so on. These advantages make the novel nanostructured paper apply in the optoelectronic device possible, such as electronics energy storage devices. This kind of paper is considered most likely to replace traditional materials like plastics and glass, which is attracting widespread attention, and the related research has also been reported. The purpose of this paper is to review CNFs which are applied in optoelectronic conversion and energy storage.

Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at National Taipei University of Technology)

Energy Technology Data Exchange (ETDEWEB)

Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division

2016-11-14

These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at National Taipei University of Technology. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at Center for Condensed Matter Sciences)

Energy Technology Data Exchange (ETDEWEB)

Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division

2016-11-14

These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at Center for Condensed Matter Sciences. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at National Sun Yat-sen University) 

Energy Technology Data Exchange (ETDEWEB)

Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division

2016-11-14

These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at National Sun Yat-sen University. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

Telemedicine optoelectronic biomedical data processing system

Science.gov (United States)

Prosolovska, Vita V.

2010-08-01

The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

Science.gov (United States)

2018-01-08

engineer next-generation carbon-based optoelectronic and photonic devices with superior performance and capabilities. These devices include carbon...electronics; (4) nanostructured graphene plasmonics; and (5) polymer-nanotube conjugate chemistry . (1) Semiconducting carbon nanotube-based...applications (In Preparation, 2018). (5) Polymer-nanotube conjugate chemistry Conjugated polymers can be exploited as agents for selectively wrapping and

Opto-electronic devices from block copolymers and their oligomers.

NARCIS (Netherlands)

Hadziioannou, G

1997-01-01

This paper presents research activities towards the development of polymer materials and devices for optoelectronics, An approach to controlling the conjugation length and transferring the luminescence properties of organic molecules to polymers through black copolymers containing well-defined

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

Directory of Open Access Journals (Sweden)

Eng Png Ching

2015-01-01

Full Text Available Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc. and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

Optoelectronic Devices Advanced Simulation and Analysis

CERN Document Server

Piprek, Joachim

2005-01-01

Optoelectronic devices transform electrical signals into optical signals and vice versa by utilizing the sophisticated interaction of electrons and light within micro- and nano-scale semiconductor structures. Advanced software tools for design and analysis of such devices have been developed in recent years. However, the large variety of materials, devices, physical mechanisms, and modeling approaches often makes it difficult to select appropriate theoretical models or software packages. This book presents a review of devices and advanced simulation approaches written by leading researchers and software developers. It is intended for scientists and device engineers in optoelectronics, who are interested in using advanced software tools. Each chapter includes the theoretical background as well as practical simulation results that help to better understand internal device physics. The software packages used in the book are available to the public, on a commercial or noncommercial basis, so that the interested r...

Advances in graphene-based optoelectronics, plasmonics and photonics

International Nuclear Information System (INIS)

Nguyen, Bich Ha; Nguyen, Van Hieu

2016-01-01

Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented. (review)

Advances in wide bandgap SiC for optoelectronics

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

2014-01-01

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

Graphene optoelectronics synthesis, characterization, properties, and applications

CERN Document Server

bin M Yusoff, Abdul Rashid

2014-01-01

This first book on emerging applications for this innovative material gives an up-to-date account of the many opportunities graphene offers high-end optoelectronics.The text focuses on potential as well as already realized applications, discussing metallic and passive components, such as transparent conductors and smart windows, as well as high-frequency devices, spintronics, photonics, and terahertz devices. Also included are sections on the fundamental properties, synthesis, and characterization of graphene. With its unique coverage, this book will be welcomed by materials scientists, solid-

Optoelectronic Mounting Structure

Science.gov (United States)

Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

2004-10-05

An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

Science.gov (United States)

Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

2016-03-22

Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications.

Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

Science.gov (United States)

Horsley, Kimberly Anne

Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He, Jr-Hau

2016-01-01

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via

Semiconductor opto-electronics

CERN Document Server

Moss, TS; Ellis, B

1972-01-01

Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

KAUST Repository

Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T; Lonergan, Mark C; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau; Javey, Ali

2016-01-01

The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

KAUST Repository

Wang, Hsin-Ping

2016-06-08

The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

Investigation, study and practice of optoelectronic MOOCs

Science.gov (United States)

Shi, Jianhua; Liu, Wei; Lei, Bing; Yao, Tianfu; Fu, Sihua

2017-08-01

MOOC(Massive Open Online Course) is a new teaching model that has been springing up since 2012. The typical characters are short teaching video, massive learners, flexible place and time to study, etc. Although MOOC is very popular now, opto-electronic MOOCs are not much enough to meet the need of online learners. In this paper, the phylogeny, the current situation and the characters of MOOC were described, the most famous MOOCs' websites, such as Udacity, Coursera, edX, Chinese College MOOC, xuetangx, were introduced, the opto-electronic MOOCs come from these famous MOOCs' website were investigated extensively and studied deeply, the "Application of Opto-electronic Technology MOOC" which was established by our group is introduced, and some conclusions are obtained. These conclusions can give some suggestions to the online learners who are interested in opto-electronic and the teachers who are teaching the opto-electronic curriculums. The preparation of "Opto-electronic Technology MOOC" is described in short.

New Development of Membrane Base Optoelectronic Devices

Directory of Open Access Journals (Sweden)

Leon Hamui

2017-12-01

Full Text Available It is known that one factor that affects the operation of optoelectronic devices is the effective protection of the semiconductor materials against environmental conditions. The permeation of atmospheric oxygen and water molecules into the device structure induces degradation of the electrodes and the semiconductor. As a result, in this communication we report the fabrication of semiconductor membranes consisting of Magnesium Phthalocyanine-allene (MgPc-allene particles dispersed in Nylon 11 films. These membranes combine polymer properties with organic semiconductors properties and also provide a barrier effect for the atmospheric gas molecules. They were prepared by high vacuum evaporation and followed by thermal relaxation technique. For the characterization of the obtained membranes, Fourier-transform infrared spectroscopy (FT-IR, scanning electron microscopy (SEM, and energy dispersive spectroscopy (EDS were used to determine the chemical and microstructural properties. UV-ViS, null ellipsometry, and visible photoluminescence (PL at room temperature were used to characterize the optoelectronic properties. These results were compared with those obtained for the organic semiconductors: MgPc-allene thin films. Additionally, semiconductor membranes devices have been prepared, and a study of the device electronic transport properties was conducted by measuring electrical current density-voltage (J-V characteristics by four point probes with different wavelengths. The resistance properties against different environmental molecules are enhanced, maintaining their semiconductor functionality that makes them candidates for optoelectronic applications.

Recent advances in flexible and wearable organic optoelectronic devices

Science.gov (United States)

Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

2018-01-01

Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

Optoelectronic and Defect Properties in Earth Abundant Photovoltaic Materials: First-principle Calculations

Science.gov (United States)

Shi, Tingting

In this dissertation, a series of earth-abundant photovoltaic materials including lead halide perovskites, copper based compounds, and silicon are investigated via density functional theory (DFT). Firstly, we study the unique optoelectronic properties of perovskite CH3NH3PbI3 and CH3NH3PbBr 3. First-principle calculations show that CH3NH3PbI 3 perovskite solar cells exhibit remarkable optoelectronic properties that account for the high open circuit voltage (Voc) and long electron-hole diffusion lengths. Our results reveal that for intrinsic doping, dominant point defects produce only shallow levels. Therefore lead halide perovskites are expected to exhibit intrinsic low non-radiative recombination rates. The conductivity of perovskites can be tuned from p-type to n-type by controlling the growth conditions. For extrinsic defects, the p-type perovskites can be achieved by doping group-IA, -IB, or -VIA elements, such as Na, K, Rb, Cu, and O at I-rich growth conditions. We further show that despite a large band gap of 2.2 eV, the dominant defects in CH3 NH3PbBr3 also create only shallow levels. The photovoltaic properties of CH3NH3PbBr3 - based perovskite absorbers can be tuned via defect engineering. Highly conductive p-type CH3NH3PbBr3 can be synthesized under Br-rich growth conditions. Such CH3NH3PbBr 3 may be potential low-cost hole transporting materials for lead halide perovskite solar cells. All these unique defect properties of perovskites are largely due to the strong Pb lone-pair s orbital and I p (Br p) orbital antibonding coupling and the high ionicity of CH3NH3PbX3 (X=I, Br). Secondly, we study the optoelectronic properties of Cu-V-VI earth abundant compounds. These low cost thin films may have the good electronic and optical properties. We have studied the structural, electronic and optical properties of Cu3-V-VI4 compounds. After testing four different crystal structures, enargite, wurtzite-PMCA, famatinite and zinc-blend-PMCA, we find that Cu3PS4 and

Organic Optoelectronic Devices Employing Small Molecules

Science.gov (United States)

Fleetham, Tyler Blain

Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt

Deformable paper origami optoelectronic devices

KAUST Repository

He, Jr-Hau

2017-01-19

Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a deformable pattern. Thin electrode layers and semiconductor nanowire layers can be attached to the substrate, creating the optoelectronic device. The devices can be highly deformable, e.g. capable of undergoing strains of 500% or more, bending angles of 25° or more, and/or twist angles of 270° or more. Methods of making the deformable optoelectronic devices and methods of using, e.g. as a photodetector, are also provided.

Optoelectronic line transmission an introduction to fibre optics

CERN Document Server

Tricker, Raymond L

2013-01-01

Optoelectronic Line Transmission: An Introduction to Fibre Optics presents a basic introduction as well as a background reference manual on fiber optic transmission. The book discusses the basic principles of optical line transmission; the advantages and disadvantages of optical fibers and optoelectronic signalling; the practical applications of optoelectronics; and the future of optoelectronics. The text also describes the theories of optical line transmission; fibers and cables for optical transmission; transmitters including light-emitting diodes and lasers; and receivers including photodi

Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism

NARCIS (Netherlands)

Santato, C.; Capelli, R.; Loi, M.A.; Murgia, M.; Cicoira, F.; Roy, Arunesh; Stallinga, P; Zamboni, R.; Rost, C.; Karg, S.F.; Muccini, M.

2004-01-01

Optoelectronic properties of light-emitting field-effect transistors (LETs) fabricated on bottom-contact transistor structures using a tetracene film as charge-transport and light-emitting material are investigated. Electroluminescence generation and transistor current are correlated, and the bias

Conducting polymers, buckminsterfullerenes, and carbon nanotubes: optoelectronic materials based on architectural diversity of the π-conjugated structure

International Nuclear Information System (INIS)

Dai, L.

2001-01-01

Recent discovery of superconductivity in self assembled poly(3-hexylthiophene) two-dimensional conjugated sheets indicates the possible applications of plastics even in superconducting optoelectronic devices. Just as the discovery of C 60 has created an entirely new branch of carbon chemistry, the subsequent discovery of carbon nanotubes by lijima in 1991 opened up a new era in material science and nanotechnology. These elongated nanotubes consist of carbon hexagons arranged in a concentric manner with both ends normally capped by fullerene-like structures containing pentagons. Having a conjugated all-carbon structure with unusual molecular symmetries, fullerenes and carbon nanotubes also show interesting electronic, photonic, magnetic and mechanical properties, attractive for various applications, including optical limiters, photovoltaic cells and field emitting displays. For most of the above applications, it is highly desirable to prepare ordered/micropatterned conducting polymers, fullerenes, and carbon nanotubes. Although the microfabrication of conducting polymers has been an active research area for some years, it is a very recent development for fullerenes and carbon nanotubes. Recently, we doped polyaniline (PANI) with a hydrogensulfated fullerenol derivative containing multiple -OSO 3 H groups (i.e. C 60 (OH) 6 (OSO 3 H) 6 ) to produce three-dimensional PANI conductors with a room-temperature conductivity of up to 100 S cm -1 . This value of conductivity is about six orders of magnitude higher than the typical value for C 60 doped conducting polymers. Later, in collaboration with Wan's group at the Chinese Academy of Sciences, we have also synthesized PANI nanotubes via a self assembled C 60 (OH) 6 (OSO 3 H) 6 supramolecular template using (NH 4 ) 2 S 2 O 8 as an oxidant. These results, together with the more recent discovery of a hollow sphere, self assembled by the potassium salt of pentaphenyl fullerene (Ph 5 C 60 K) in water, clearly indicate that

Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

Science.gov (United States)

Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua

2018-06-21

Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

Lasers and optoelectronics fundamentals, devices and applications

CERN Document Server

Maini, Anil K

2013-01-01

With emphasis on the physical and engineering principles, this book provides a comprehensive and highly accessible treatment of modern lasers and optoelectronics. Divided into four parts, it explains laser fundamentals, types of lasers, laser electronics & optoelectronics, and laser applications, covering each of the topics in their entirety, from basic fundamentals to advanced concepts. Key features include: exploration of technological and application-related aspects of lasers and optoelectronics, detailing both existing and emerging applications in industry, medical diag

Nanocrystals of Cesium Lead Halide Perovskites (CsPbX₃, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut.

Science.gov (United States)

Protesescu, Loredana; Yakunin, Sergii; Bodnarchuk, Maryna I; Krieg, Franziska; Caputo, Riccarda; Hendon, Christopher H; Yang, Ruo Xi; Walsh, Aron; Kovalenko, Maksym V

2015-06-10

Metal halides perovskites, such as hybrid organic-inorganic CH3NH3PbI3, are newcomer optoelectronic materials that have attracted enormous attention as solution-deposited absorbing layers in solar cells with power conversion efficiencies reaching 20%. Herein we demonstrate a new avenue for halide perovskites by designing highly luminescent perovskite-based colloidal quantum dot materials. We have synthesized monodisperse colloidal nanocubes (4-15 nm edge lengths) of fully inorganic cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I or mixed halide systems Cl/Br and Br/I) using inexpensive commercial precursors. Through compositional modulations and quantum size-effects, the bandgap energies and emission spectra are readily tunable over the entire visible spectral region of 410-700 nm. The photoluminescence of CsPbX3 nanocrystals is characterized by narrow emission line-widths of 12-42 nm, wide color gamut covering up to 140% of the NTSC color standard, high quantum yields of up to 90%, and radiative lifetimes in the range of 1-29 ns. The compelling combination of enhanced optical properties and chemical robustness makes CsPbX3 nanocrystals appealing for optoelectronic applications, particularly for blue and green spectral regions (410-530 nm), where typical metal chalcogenide-based quantum dots suffer from photodegradation.

Transparent Electrodes for Efficient Optoelectronics

KAUST Repository

Morales-Masis, Monica

2017-03-30

With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

Optoelectronics of Molecules and Polymers

CERN Document Server

Moliton, André

2006-01-01

Optoelectronic devices are being developed at an extraordinary rate. Organic light emitting diodes, photovoltaic devices and electro-optical modulators are pivotal to the future of displays, photosensors and solar cells, and communication technologies. This book details the theories underlying the relevant mechanisms in organic materials and covers, at a basic level, how the organic components are made. The first part of this book introduces the fundamental theories used to detail ordered solids and localised energy levels. The methods used to determine energy levels in perfectly ordered molecular and macromolecular systems are discussed, making sure that the effects of quasi-particles are not missed. The function of excitons and their transfer between two molecules are studied, and the problems associated with interfaces and charge injection into resistive media are presented. The second part details technological aspects such as the fabrication of devices based on organic materials by dry etching. The princ...

Transparent Electrodes for Efficient Optoelectronics

KAUST Repository

Morales-Masis, Monica; De Wolf, Stefaan; Woods-Robinson, Rachel; Ager, Joel W.; Ballif, Christophe

2017-01-01

With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

Electroactive and Optoelectronically Active Graphene Nanofilms

DEFF Research Database (Denmark)

Chi, Qijin

As an atomic-scale-thick two-dimensional material, graphene has emerged as one of the most miracle materials and has generated intensive interest in physics, chemistry and even biology in the last decade [1, 2]. Nanoscale engineering and functionalization of graphene is a crucial step for many...... applications ranging from catalysis, electronic devices, sensors to advanced energy conversion and storage [3]. This talk highlights our recent studies on electroactive and optoelectronically active graphene ultrathin films for chemical sensors and energy technology. The presentation includes a general theme...... for functionalization of graphene nanosheets, followed by showing several case studies. Our systems cover redox-active nanoparticles, electroactive supramolecular ensembles and redox enzymes which are integrated with graphene nanosheets as building blocks for the construction of functional thin films or graphene papers....

Radiation effects in optoelectronic devices

International Nuclear Information System (INIS)

Barnes, C.E.; Wiczer, J.J.

1984-05-01

Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given

Ultrafast Graphene Photonics and Optoelectronics

Science.gov (United States)

2017-04-14

AFRL-AFOSR-JP-TR-2017-0032 Ultrafast Graphene Photonics and Optoelectronics Kuang-Hsiung Wu National Chiao Tung University Final Report 04/14/2017...DATES COVERED (From - To) 18 Apr 2013 to 17 Apr 2016 4. TITLE AND SUBTITLE Ultrafast Graphene Photonics and Optoelectronics 5a.  CONTRACT NUMBER 5b...Prescribed by ANSI Std. Z39.18 Final Report for AOARD Grant FA2386-13-1-4022 “Ultrafast Graphene Photonics and Optoelectronics” Date May 23th, 2016

Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance

KAUST Repository

Banavoth, Murali; Yengel, Emre; Peng, Wei; Chen, Zhijie; Alias, Mohd Sharizal; Alarousu, Erkki; Ooi, Boon S.; Burlakov, Victor; Goriely, Alain; Eddaoudi, Mohamed; Bakr, Osman; Mohammed, Omar F.

2016-01-01

Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including

Optoelectronics-related competence building in Japanese and Western firms

Science.gov (United States)

Miyazaki, Kumiko

1992-05-01

In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.

Abs-initio, Predictive Calculations for Optoelectronic and Advanced Materials Research

Science.gov (United States)

Bagayoko, Diola

2010-10-01

Most density functional theory (DFT) calculations find band gaps that are 30-50 percent smaller than the experimental ones. Some explanations of this serious underestimation by theory include self-interaction and the derivative discontinuity of the exchange correlation energy. Several approaches have been developed in the search for a solution to this problem. Most of them entail some modification of DFT potentials. The Green function and screened Coulomb approximation (GWA) is a non-DFT formalism that has led to some improvements. Despite these efforts, the underestimation problem has mostly persisted in the literature. Using the Rayleigh theorem, we describe a basis set and variational effect inherently associated with calculations that employ a linear combination of atomic orbitals (LCAO) in a variational approach of the Rayleigh-Ritz type. This description concomitantly shows a source of large underestimation errors in calculated band gaps, i.e., an often dramatic lowering of some unoccupied energies on account of the Rayleigh theorem as opposed to a physical interaction. We present the Bagayoko, Zhao, and Williams (BZW) method [Phys. Rev. B 60, 1563 (1999); PRB 74, 245214 (2006); and J. Appl. Phys. 103, 096101 (2008)] that systematically avoids this effect and leads (a) to DFT and LDA calculated band gaps of semiconductors in agreement with experiment and (b) theoretical predictions of band gaps that are confirmed by experiment. Unlike most calculations, BZW computations solve, self-consistently, a system of two coupled equations. DFT-BZW calculated effective masses and optical properties (dielectric functions) also agree with measurements. We illustrate ten years of success of the BZW method with its results for GaN, C, Si, 3C-SIC, 4H-SiC, ZnO, AlAs, Ge, ZnSe, w-InN, c-InN, InAs, CdS, AlN and nanostructures. We conclude with potential applications of the BZW method in optoelectronic and advanced materials research.

Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

Science.gov (United States)

Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

2016-06-01

Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growing perovskite into polymers for easy-processable optoelectronic devices

Science.gov (United States)

Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

2015-01-01

Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

Directory of Open Access Journals (Sweden)

Debashis De

2011-07-01

Full Text Available The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementioned superlattices, together with quantum well superlattices under magnetic quantization, has also been investigated in this regard. It appears, taking HgTe/Hg1−xCdxTe and InxGa1−xAs/InP effective mass superlattices, that the photoemission from these quantized structures is enhanced with increasing photon energy in quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six different applications in the fields of low dimensional systems in general.

Optoelectronics technologies for Virtual Reality systems

Science.gov (United States)

Piszczek, Marek; Maciejewski, Marcin; Pomianek, Mateusz; Szustakowski, Mieczysław

2017-08-01

Solutions in the field of virtual reality are very strongly associated with optoelectronic technologies. This applies to both process design and operation of VR applications. Technologies such as 360 cameras and 3D scanners significantly improve the design work. What is more, HMD displays with high field of view or optoelectronic Motion Capture systems and 3D cameras guarantee an extraordinary experience in immersive VR applications. This article reviews selected technologies from the perspective of their use in a broadly defined process of creating and implementing solutions for virtual reality. There is also the ability to create, modify and adapt new approaches that show team own work (SteamVR tracker). Most of the introduced examples are effectively used by authors to create different VR applications. The use of optoelectronic technology in virtual reality is presented in terms of design and operation of the system as well as referring to specific applications. Designers and users of VR systems should take a close look on new optoelectronics solutions, as they can significantly contribute to increased work efficiency and offer completely new opportunities for virtual world reception.

Dental impression technique using optoelectronic devices

Science.gov (United States)

Sinescu, Cosmin; Barua, Souman; Topala, Florin Ionel; Negrutiu, Meda Lavinia; Duma, Virgil-Florin; Gabor, Alin Gabriel; Zaharia, Cristian; Bradu, Adrian; Podoleanu, Adrian G.

2018-03-01

INTRODUCTION: The use of Optical Coherence Tomography (OCT) as a non-invasive and high precision quantitative information providing tool has been well established by researches within the last decade. The marginal discrepancy values can be scrutinized in optical biopsy made in three dimensional (3D) micro millimetre scale and reveal detailed qualitative and quantitative information of soft and hard tissues. OCT-based high resolution 3D images can provide a significant impact on finding recurrent caries, restorative failure, analysing the precision of crown preparation, and prosthetic elements marginal adaptation error with the gingiva and dental hard tissues. During the CAD/CAM process of prosthodontic restorations, the circumvent of any error is important for the practitioner and the technician to reduce waste of time and material. Additionally, OCT images help to achieve a new or semi-skilled practitioner to analyse their crown preparation works and help to develop their skills faster than in a conventional way. The aim of this study is to highlight the advantages of OCT in high precision prosthodontic restorations. MATERIALS AND METHODS: 25 preparations of frontal and lateral teeth were performed for 7 different patients. The impressions of the prosthetic fields were obtained both using a conventional optoelectronic system (Apolo Di, Syrona) and a Spectral Domain using OCT (Dental prototype, working at 860 nm). For the conventional impression technique the preparation margins were been prelevated by gingival impregnated cords. No specific treatments were performed by the OCT impression technique. RESULTS: The scanning performed by conventional optoelectronic system proved to be quick and accurate in terms of impression technology. The results were represented by 3D virtual models obtained after the scanning procedure was completed. In order to obtain a good optical impression a gingival retraction cord was inserted between the prepared tooth and the gingival

An introduction to optoelectronic sensors

CERN Document Server

Tajani, Antonella; Cutolo, Antonello

2009-01-01

This invaluable book offers a comprehensive overview of the technologies and applications of optoelectronic sensors. Based on the R&D experience of more than 70 engineers and scientists, highly representative of the Italian academic and industrial community in this area, this book provides a broad and accurate description of the state-of-the-art optoelectronic technologies for sensing. The most innovative approaches, such as the use of photonic crystals, squeezed states of light and microresonators for sensing, are considered. Application areas range from environment to medicine and healthcare

Proceedings of the thirty fifth international conference on contemporary trends in optics and optoelectronics: conference digest - extended abstracts

International Nuclear Information System (INIS)

2011-01-01

Optics and optoelectronics are indispensable in all spheres of human activity, ranging from day to day needs to advanced scientific and technological pursuits and their applications for the benefit of the society. This conference covers the following topics: adaptive optics, biomedical optics and imaging, classical and quantum optics, fibre optics, optics for space applications, optical metrology and NDT, optical information processing, optical and optoelectronic materials. Papers relevant to INIS are indexed separately

A simple encapsulation method for organic optoelectronic devices

International Nuclear Information System (INIS)

Sun Qian-Qian; An Qiao-Shi; Zhang Fu-Jun

2014-01-01

The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells (PSCs). The power conversion efficiencies (PCE) of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices. (atomic and molecular physics)

Bis(5,7-dimethyl-8-hydroxyquinolinato)beryllium(II) complex as optoelectronic material

Energy Technology Data Exchange (ETDEWEB)

Singh, Devender, E-mail: devjakhar@gmail.com; Singh, Kapoor; Bhagwan, Shri; Saini, Raman Kumar; Kadyan, Pratap Singh; Singh, Ishwar

2016-01-15

Metal complex bis(5,7-dimethyl-8-hydroxyquinolinato)beryllium(II) as a light emissive material had been synthesized and characterized by various spectral techniques. The beryllium complex had high thermal stability (>250 °C) as well as high glass transition temperature (>115 °C). The prepared metal chelate had a strong photoluminescence (PL) emission at 558 nm (FWHM=72 nm) and electroluminescence (EL) at 561 nm (FWHM=55 nm) with good efficiency. Density functional theoretical calculations have been performed to demonstrate the three-dimensional geometries and the frontier molecular orbital energy levels of this metal complex. Sublimed metal chelate formed thin transparent film and found appropriate material for exploring their opto-electronic applications. OLED device was fabricated using this metal complex by vacuum deposition technique with the device configuration of ITO/TPD(30 nm)/Be-complex(30 nm)/BCP(6 nm)/Alq{sub 3}(28 nm)/LiF(1 nm)/Al(100 nm). The emitted color of the EL device showed Commission Internationale d'Eclairage (CIE) color coordinates as x=0.625, y=0.366 corresponding to greenish yellow color. The maximum luminescence of the fabricated device was reported 1364 Cd/m{sup 2} at 22 V. The maximum current efficiency and power efficiency were 1.75 Cd/A and 0.51 lm/W at 10 V respectively for the fabricated OLED device. - Highlights: • Novel greenish yellow light emitting beryllium complex with 5,7-dimethyl-8-hydroxyquinoline was prepared. • The prepared metal complex were characterized by elemental analysis, infrared spectroscopy (FTIR), proton nuclear magnetic resonance spectroscopy ({sup 1}H NMR), thermogravimetric analysis (TGA) as well as differential scanning calorimetry (DSC) techniques. • Electron density distribution and the frontier molecular orbital energy levels of resulting metal complex were computed by density functional theory in the course of DFT/B3LYP/6-31G(d,p) studies. • Sublimed synthesized metal complex of beryllium

Bis(5,7-dimethyl-8-hydroxyquinolinato)beryllium(II) complex as optoelectronic material

International Nuclear Information System (INIS)

Singh, Devender; Singh, Kapoor; Bhagwan, Shri; Saini, Raman Kumar; Kadyan, Pratap Singh; Singh, Ishwar

2016-01-01

Metal complex bis(5,7-dimethyl-8-hydroxyquinolinato)beryllium(II) as a light emissive material had been synthesized and characterized by various spectral techniques. The beryllium complex had high thermal stability (>250 °C) as well as high glass transition temperature (>115 °C). The prepared metal chelate had a strong photoluminescence (PL) emission at 558 nm (FWHM=72 nm) and electroluminescence (EL) at 561 nm (FWHM=55 nm) with good efficiency. Density functional theoretical calculations have been performed to demonstrate the three-dimensional geometries and the frontier molecular orbital energy levels of this metal complex. Sublimed metal chelate formed thin transparent film and found appropriate material for exploring their opto-electronic applications. OLED device was fabricated using this metal complex by vacuum deposition technique with the device configuration of ITO/TPD(30 nm)/Be-complex(30 nm)/BCP(6 nm)/Alq 3 (28 nm)/LiF(1 nm)/Al(100 nm). The emitted color of the EL device showed Commission Internationale d'Eclairage (CIE) color coordinates as x=0.625, y=0.366 corresponding to greenish yellow color. The maximum luminescence of the fabricated device was reported 1364 Cd/m 2 at 22 V. The maximum current efficiency and power efficiency were 1.75 Cd/A and 0.51 lm/W at 10 V respectively for the fabricated OLED device. - Highlights: • Novel greenish yellow light emitting beryllium complex with 5,7-dimethyl-8-hydroxyquinoline was prepared. • The prepared metal complex were characterized by elemental analysis, infrared spectroscopy (FTIR), proton nuclear magnetic resonance spectroscopy ( 1 H NMR), thermogravimetric analysis (TGA) as well as differential scanning calorimetry (DSC) techniques. • Electron density distribution and the frontier molecular orbital energy levels of resulting metal complex were computed by density functional theory in the course of DFT/B3LYP/6-31G(d,p) studies. • Sublimed synthesized metal complex of beryllium gave greenish

Dual-scale topology optoelectronic processor.

Science.gov (United States)

Marsden, G C; Krishnamoorthy, A V; Esener, S C; Lee, S H

1991-12-15

The dual-scale topology optoelectronic processor (D-STOP) is a parallel optoelectronic architecture for matrix algebraic processing. The architecture can be used for matrix-vector multiplication and two types of vector outer product. The computations are performed electronically, which allows multiplication and summation concepts in linear algebra to be generalized to various nonlinear or symbolic operations. This generalization permits the application of D-STOP to many computational problems. The architecture uses a minimum number of optical transmitters, which thereby reduces fabrication requirements while maintaining area-efficient electronics. The necessary optical interconnections are space invariant, minimizing space-bandwidth requirements.

FABRICATION, MORPHOLOGICAL AND OPTOELECTRONIC ...

African Journals Online (AJOL)

2014-12-31

Dec 31, 2014 ... porous silicon has better optoelectronic properties than bulk .... Measurement: The morphological properties of PS layer such as nanocrystalline size, the .... excess carrier removal by internal recombination and diffusion.

The Electrical and Optical Properties of Organometal Halide Perovskites Relevant to Optoelectronic Performance

KAUST Repository

Adinolfi, Valerio

2017-10-12

Organometal halide perovskites are under intense study for use in optoelectronics. Methylammonium and formamidinium lead iodide show impressive performance as photovoltaic materials; a premise that has spurred investigations into light-emitting devices and photodetectors. Herein, the optical and electrical material properties of organometal halide perovskites are reviewed. An overview is given on how the material composition and morphology are tied to these properties, and how these properties ultimately affect device performance. Material attributes and techniques used to estimate them are analyzed for different perovskite materials, with a particular focus on the bandgap, mobility, diffusion length, carrier lifetime, and trap-state density.

Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

Science.gov (United States)

Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

2015-05-06

Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

Optoelectronic and Photovoltaic Properties of the Air-Stable Organohalide Semiconductor (CH 3 NH 3 ) 3 Bi 2 I 9

KAUST Repository

Abulikemu, Mutalifu

2016-07-14

Lead halide perovskite materials have shown excellent optoelectronic as well as photovoltaic properties. However, the presence of lead and the chemical instability relegate lead halide perovskites to research applications only. Here, we investigate an emerging lead-free and air stable compound (CH3NH3)3Bi2I9 as a non-toxic potential alternative to lead halide perovskites. We have synthesized thin films, powders and millimeter-scale single crystals of (CH3NH3)3Bi2I9 and investigated their structural and optoelectronic properties. We demonstrate that the degree of crystallinity strongly affects the optoelectronic properties of the material, resulting in significantly different band gaps in polycrystalline thin films and single crystals. Surface photovoltage spectroscopy reveals outstanding photocharge generation in the visible (<700 nm), while transient absorption spectroscopy and space charge limited current measurements point to a long exciton lifetime and a high carrier mobility, respectively, similar to lead halide perovskites, pointing to the remarkable potential of this semiconductor. Photovoltaic devices fabricated using this material yield low power conversion efficiency (PCE) to date, but the PCE is expected to rise with improvements in thin film processing and device engineering.

Laser applications in the electronics and optoelectronics industry in Japan

Science.gov (United States)

Washio, Kunihiko

1999-07-01

This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices †

KAUST Repository

Beljonne, David; Cornil, Jérôme; Muccioli, Luca; Zannoni, Claudio; Brédas, Jean-Luc; Castet, Frédéric

2011-01-01

We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational

Optoelectronic lessons as an interdisciplinary lecture

Science.gov (United States)

Wu, Dan; Wu, Maocheng; Gu, Jihua

2017-08-01

It is noticed that more and more students in college are passionately curious about the optoelectronic technology, since optoelectronic technology has advanced extremely quickly during the last five years and its applications could be found in a lot of domains. The students who are interested in this area may have different educational backgrounds and their majors cover science, engineering, literature and social science, etc. Our course "History of the Optoelectronic Technology" is set up as an interdisciplinary lecture of the "liberal education" at our university, and is available for all students with different academic backgrounds from any departments of our university. The main purpose of the course is to show the interesting and colorful historical aspects of the development of this technology, so that the students from different departments could absorb the academic nourishment they wanted. There are little complex derivations of physical formulas through the whole lecture, but there are still some difficulties about the lecture which is discussed in this paper.

Stereoscopic construction and practice of optoelectronic technology textbook

Science.gov (United States)

Zhou, Zigang; Zhang, Jinlong; Wang, Huili; Yang, Yongjia; Han, Yanling

2017-08-01

It is a professional degree course textbook for the Nation-class Specialty—Optoelectronic Information Science and Engineering, and it is also an engineering practice textbook for the cultivation of photoelectric excellent engineers. The book seeks to comprehensively introduce the theoretical and applied basis of optoelectronic technology, and it's closely linked to the current development of optoelectronic industry frontier and made up of following core contents, including the laser source, the light's transmission, modulation, detection, imaging and display. At the same time, it also embodies the features of the source of laser, the transmission of the waveguide, the electronic means and the optical processing methods.

Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection

International Nuclear Information System (INIS)

Cherkaoui, K.

1998-01-01

The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

Concept of Quantum Geometry in Optoelectronic Processes in Solids: Application to Solar Cells.

Science.gov (United States)

Nagaosa, Naoto; Morimoto, Takahiro

2017-07-01

The concept of topology is becoming more and more relevant to the properties and functions of electronic materials including various transport phenomena and optical responses. A pedagogical introduction is given here to the basic ideas and their applications to optoelectronic processes in solids. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Perspectives in optoelectronics

National Research Council Canada - National Science Library

Jha, Sudhanshu S

1995-01-01

..., optoelectronics is playing a major role in both applied as well as basic sciences. In years to come, i t is destined to change the face of information technology and robotics, involving optical sensing and control, information storage, signal and image processing, communications, and computing. Because of the possibility of using large bandwidths availa...

CARBON-FIBRE-REINFORCED POLYMER PARTS EFFECT ON SPACECRAFT OPTOELECTRONIC MODULE LENS SCATTERING

Directory of Open Access Journals (Sweden)

S. S. Kolasha

2016-01-01

Full Text Available Spacecraft optoelectronic modules traditionally have aluminum alloy or titanium alloy casing which substantial weight increases fuel consumption required to put them into orbit and, consequently, total cost of the project. Carbon fiber reinforced polymer based composite constructive materials is an efficient solution that allows reducing weight and dimensions of large optoelectronic modules 1,5–3 times and the coefficient of linear thermal expansion 15–20 times if compared with metals. Optical characteristic is a crucial feature of carbon-fibre-reinforced polymer that determines composite material interaction with electromagnetic emission within the optical range. This work was intended to develop a method to evaluate Carbon fiber reinforced polymer optoelectronic modules casing effect on lens scattering by computer simulation with Zemax application software package. Degrees of scattered, reflected and absorbed radiant flux effect on imaging quality are described here. The work included experimental study in order to determine bidirectional reflectance distribution function by goniometric method for LUP-0.1 carbon fabric check test pieces of EDT-69U epoxy binder with EPOFLEX-0.4 glue layer and 5056-3.5-23-A aluminium honeycomb filler. The scattered emission was registered within a hemisphere above the check test piece surface. Optical detection direction was determined with zenith (0º < θ < 90º and azimuth (0º < φ < 180º angles with 10° increment. The check test piece surface was proved to scatter emission within a narrow angle range (approximately 20° with clear directivity. Carbon fiber reinforced polymers was found to feature integrated reflectance coefficient 3 to 4 times greater than special coatings do. 

Optoelectronic Characterization by Advanced Ab-Initio Methods of Novel Photovoltaic Intermediate Band Materials = Caracterización optoelectrónica por métodos ab-initio avanzados de nuevos materiales fotovoltaicos de banda intermedia

OpenAIRE

Aguilera Bonet, Irene

2011-01-01

Intermediate-band materials represent nowadays one of the most promising proposals in the quest for more efficient, lower-cost solar cells. In this thesis we present a deep study of transition-metal substituted semiconductors based on their optoelectronic properties. These materials were proposed as high efficiency photovoltaic absorbers for intermediate-band solar cells for showing a partiallyfilled band placed inside the band gap of the parent semiconductor which enables the absorption of p...

OSA Trends in Optics and Photonics Series. Volume 13: Ultrafast Electronics and Optoelectronics

Science.gov (United States)

1997-01-01

tomography. Many materials such as plastics, cardboard, wood and rubber have good transparency in the terahertz frequency range. Hence, this new...Ultrafast processes in semiconductors. Introduction Nonlinear Bragg reflector ( NBR ) consists of periodically distributed optical nonlinearity coexisting...with multiple reflection and group-delay dispersion. Recent theoretical analyses showed the potential of NBR in ultrafast optoelectronics such as all

Modification of the optoelectronic properties of two-dimensional MoS2 crystals by ultraviolet-ozone treatment

Science.gov (United States)

Yang, Hae In; Park, Seonyoung; Choi, Woong

2018-06-01

We report the modification of the optoelectronic properties of mechanically-exfoliated single layer MoS2 by ultraviolet-ozone exposure. Photoluminescence emission of pristine MoS2 monotonically decreased and eventually quenched as ultraviolet-ozone exposure time increased from 0 to 10 min. The reduction of photoluminescence emission accompanied reduction of Raman modes, suggesting structural degradation in ultraviolet-ozone exposed MoS2. Analysis with X-ray photoelectron spectroscopy revealed that the formation of Ssbnd O and Mosbnd O bonding increases with ultraviolet-ozone exposure time. Measurement of electrical transport properties of MoS2 in a bottom-gate thin-film transistor configuration suggested the presence of insulating MoO3 after ultraviolet-ozone exposure. These results demonstrate that ultraviolet-ozone exposure can significantly influence the optoelectronic properties of single layer MoS2, providing important implications on the application of MoS2 and other two-dimensional materials into optoelectronic devices.

Effect of annealing over optoelectronic properties of graphene based transparent electrodes

Energy Technology Data Exchange (ETDEWEB)

Yadav, Shriniwas, E-mail: sniwas89@gmail.com; Kaur, Inderpreet, E-mail: inderpreety@yahoo.co.in [Academy of Scientific and Innovative Research- Central Scientific Instruments Organisation (AcSIR-CSIO), Sector-30C, Chandigarh (India); Council of Scientific and Industrial Research- Central Scientific Instruments Organisation (CSIR-CSIO), Sector-30C, Chandigarh (India)

2016-04-13

Graphene, an atom–thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σ{sub dc}/σ{sub opt}) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

Effect of annealing over optoelectronic properties of graphene based transparent electrodes

Science.gov (United States)

Yadav, Shriniwas; Kaur, Inderpreet

2016-04-01

Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

FY 1998 annual report on the research and development of non-linear, opto-electronic materials; 1998 nendo hisenkei hikari denshi zairyo no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

The final assessment of researches on non-linear, opto-electronic materials was conducted in FY 1988. These researches are evaluated as the world-level basic researches, high in potential of giving ripple effects on various areas. The R and D themes are organic, low-molecular-weight materials; technology for orientation-controlled crystal growth; conjugated polymer films; microcrystallite-doped glasses using vapor deposition and stuffing method; glass composite materials using sol-gel method and ultra-low melting point glass; nanoparticle-dispersed glasses using super-cooling technology; materials dispersed in organic compounds; organic superlattice formation; three-dimensionally superstructured materials; and comprehensive surveys and researches. The researches and surveys on the common basic techniques were recommissioned to Universities of Tokyo, Keio Gijuku, Nagoya, Tohoku and Hokkaido. These themes are analytical methods for non-linear optical characteristics; morphology-controlled crystal growth of nonlinear-optical organic materials and fundamental studies on all-optical devices; large enhancement of optical nonlinearity and its mechanism in nanocrystals embedded in matrices; improvement of organic materials for high performance; and ultrafast nonlinear optical processes and their application for controlling ultrafast optical pulses. (NEDO)

Advanced educational program in optoelectronics for undergraduates and graduates in electronics

Science.gov (United States)

Vladescu, Marian; Schiopu, Paul

2015-02-01

The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.

Nano crystals for Electronic and Optoelectronic Applications

International Nuclear Information System (INIS)

Zhu, T.; Cloutier, S.G.; Ivanov, I; Knappenberger Jr, K.L.; Robel, I.; Zhang, F

2012-01-01

Electronic and optoelectronic devices, from computers and smart cell phones to solar cells, have become a part of our life. Currently, devices with featured circuits of 45 nm in size can be fabricated for commercial use. However, further development based on traditional semiconductor is hindered by the increasing thermal issues and the manufacturing cost. During the last decade, nano crystals have been widely adopted in various electronic and optoelectronic applications. They provide alternative options in terms of ease of processing, low cost, better flexibility, and superior electronic/optoelectronic properties. By taking advantage of solution-processing, self-assembly, and surface engineering, nano crystals could serve as new building blocks for low-cost manufacturing of flexible and large area devices. Tunable electronic structures combined with small exciton binding energy, high luminescence efficiency, and low thermal conductivity make nano crystals extremely attractive for FET, memory device, solar cell, solid-state lighting/display, photodetector, and lasing applications. Efforts to harness the nano crystal quantum tunability have led to the successful demonstration of many prototype devices, raising the public awareness to the wide range of solutions that nano technology can provide for an efficient energy economy. This special issue aims to provide the readers with the latest achievements of nano crystals in electronic and optoelectronic applications, including the synthesis and engineering of nano crystals towards the applications and the corresponding device fabrication, characterization and computer modeling.

RIR-MAPLE deposition of conjugated polymers and hybrid nanocomposites for application to optoelectronic devices

International Nuclear Information System (INIS)

Stiff-Roberts, Adrienne D.; Pate, Ryan; McCormick, Ryan; Lantz, Kevin R.

2012-01-01

Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a variation of pulsed laser deposition that is useful for organic-based thin films because it reduces material degradation by selective absorption of infrared radiation in the host matrix. A unique emulsion-based RIR-MAPLE approach has been developed that reduces substrate exposure to solvents and provides controlled and repeatable organic thin film deposition. In order to establish emulsion-based RIR-MAPLE as a preferred deposition technique for conjugated polymer or hybrid nanocomposite optoelectronic devices, studies have been conducted to demonstrate the value added by the approach in comparison to traditional solution-based deposition techniques, and this work will be reviewed. The control of hybrid nanocomposite thin film deposition, and the photoconductivity in such materials deposited using emulsion-based RIR-MAPLE, will also be reviewed. The overall result of these studies is the demonstration of emulsion-based RIR-MAPLE as a viable option for the fabrication of conjugated polymer and hybrid nanocomposite optoelectronic devices that could yield improved device performance.

Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

International Nuclear Information System (INIS)

Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

2015-01-01

Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

Exploring single-layered SnSe honeycomb polymorphs for optoelectronic and photovoltaic applications

Science.gov (United States)

Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Shkir, Mohd.

2018-02-01

Single-layered tin selenide that shares the same structure with phosphorene and possesses intriguing optoelectronic properties has received great interest as a two-dimensional material beyond graphene and phosphorene. Herein, we explore the optoelectronic response of the newly discovered stable honeycomb derivatives (such as α , β , γ , δ , and ɛ ) of single-layered SnSe in the framework of density functional theory. The α , β , γ , and δ derivatives of a SnSe monolayer have been found to exhibit an indirect band gap, however, the dispersion of their band-gap edges demonstrates multiple direct band gaps at a relatively high energy. The ɛ -SnSe, however, features an intrinsic direct band gap at the high-symmetry Γ point. Their energy band gaps (0.53, 2.32, 1.52, 1.56, and 1.76 eV for α -, β -, γ -, δ -, and ɛ -SnSe, respectively), calculated at the level of the Tran-Blaha modified Becke-Johnson approach, mostly fall right in the visible range of the electromagnetic spectrum and are in good agreement with the available literature. The optical spectra of these two-dimensional (2D) SnSe polymorphs (besides β -SnSe) are highly anisotropic and possess strictly different optical band gaps along independent diagonal components. They show high absorption in the visible and UV ranges. Similarly, the reflectivity, refraction, and optical conductivities inherit strong anisotropy from the dielectric functions as well and are highly visible-UV polarized along the cartesian coordinates, showing them to be suitable for optical filters, polarizers, and shields against UV radiation. Our investigations suggest these single-layered SnSe allotropes as a promising 2D material for next-generation nanoscale optoelectronic and photovoltaic applications beyond graphene and phosphorene.

Mild Conditions for Deuteration of Primary and Secondary Arylamines for the Synthesis of Deuterated Optoelectronic Organic Molecules

Directory of Open Access Journals (Sweden)

Anwen M. Krause-Heuer

2014-11-01

Full Text Available Deuterated arylamines demonstrate great potential for use in optoelectronic devices, but their widespread utility requires a method for large-scale synthesis. The incorporation of these deuterated materials into optoelectronic devices also provides the opportunity for studies of the functioning device using neutron reflectometry based on the difference in the scattering length density between protonated and deuterated compounds. Here we report mild deuteration conditions utilising standard laboratory glassware for the deuteration of: diphenylamine, N-phenylnaphthylamine, N-phenyl-o-phenylenediamine and 1-naphthylamine (via H/D exchange in D2O at 80 °C, catalysed by Pt/C and Pd/C. These conditions were not successful in the deuteration of triphenylamine or N,N-dimethylaniline, suggesting that these mild conditions are not suitable for the deuteration of tertiary arylamines, but are likely to be applicable for the deuteration of other primary and secondary arylamines. The deuterated arylamines can then be used for synthesis of larger organic molecules or polymers with optoelectronic applications.

Analysis of optoelectronic strategic planning in Taiwan by artificial intelligence portfolio tool

Science.gov (United States)

Chang, Rang-Seng

1992-05-01

Taiwan ROC has achieved significant advances in the optoelectronic industry with some Taiwan products ranked high in the world market and technology. Six segmentations of optoelectronic were planned. Each one was divided into several strategic items, design artificial intelligent portfolio tool (AIPT) to analyze the optoelectronic strategic planning in Taiwan. The portfolio is designed to provoke strategic thinking intelligently. This computer- generated strategy should be selected and modified by the individual. Some strategies for the development of the Taiwan optoelectronic industry also are discussed in this paper.

Exploration on the training mode of application-oriented talents majoring in optoelectronic information

Science.gov (United States)

Lv, Hao; Liu, Aimei; Zhang, Shengyi; Xiao, Yongjun

2017-08-01

The optoelectronic information major is a strong theoretical and practical specialty. In view of the problems existing in the application-oriented talents training in the optoelectronic information specialty. Five aspects of the talent cultivation plan, the teaching staff, the teaching content, the practical teaching and the scientific research on the training mode of application-oriented talents majoring in optoelectronic information are putted forward. It is beneficial to the specialty construction of optoelectronic information industry which become close to the development of enterprises, and the depth of the integration of school and enterprise service regional economic optoelectronic information high-end skilled personnel base.

Carbon dots—Emerging light emitters for bioimaging, cancer therapy and optoelectronics

KAUST Repository

Hola, Katerina; Zhang, Yu; Wang, Yu; Giannelis, Emmanuel P.; Zboril, Radek; Rogach, Andrey L.

2014-01-01

© 2014 Elsevier Ltd. All rights reserved. Carbon dots represent an emerging class of fluorescent materials and provide a broad application potential in various fields of biomedicine and optoelectronics. In this review, we introduce various synthetic strategies and basic photoluminescence properties of carbon dots, and then address their advanced in vitro and in vivo bioapplications including cell imaging, photoacoustic imaging, photodynamic therapy and targeted drug delivery. We further consider the applicability of carbon dots as components of light emitting diodes, which include carbon dot based electroluminescence, optical down-conversion, and hybrid plasmonic devices. The review concludes with an outlook towards future developments of these emerging light-emitting materials.

Carbon dots—Emerging light emitters for bioimaging, cancer therapy and optoelectronics

KAUST Repository

Hola, Katerina

2014-10-01

© 2014 Elsevier Ltd. All rights reserved. Carbon dots represent an emerging class of fluorescent materials and provide a broad application potential in various fields of biomedicine and optoelectronics. In this review, we introduce various synthetic strategies and basic photoluminescence properties of carbon dots, and then address their advanced in vitro and in vivo bioapplications including cell imaging, photoacoustic imaging, photodynamic therapy and targeted drug delivery. We further consider the applicability of carbon dots as components of light emitting diodes, which include carbon dot based electroluminescence, optical down-conversion, and hybrid plasmonic devices. The review concludes with an outlook towards future developments of these emerging light-emitting materials.

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

Science.gov (United States)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

Optoelectronic and Photovoltaic Properties of the Air-Stable Organohalide Semiconductor (CH 3 NH 3 ) 3 Bi 2 I 9

KAUST Repository

Abulikemu, Mutalifu; Ould-Chikh, Samy; Miao, Xiaohe; Alarousu, Erkki; Banavoth, Murali; Ngongang Ndjawa, Guy Olivier; Barbe, Jeremy; El Labban, Abdulrahman; Amassian, Aram; Del Gobbo, Silvano

2016-01-01

Lead halide perovskite materials have shown excellent optoelectronic as well as photovoltaic properties. However, the presence of lead and the chemical instability relegate lead halide perovskites to research applications only. Here, we investigate

``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon

Science.gov (United States)

Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant

2014-03-01

Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

KAUST Repository

Muhammed, Mufasila Mumthaz

2018-03-11

III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique properties that combine high transparency and conductivity, is used for the first time in the development of high-quality vertical III-nitride devices, which can be cost-effective for large-scale production. In addition, hybridizing GaN with emerging materials, mainly perovskite, is shown to extend the functionality of III-nitride applications. As a part of this investigation, high-performance and high-responsivity fast perovskite/GaN-based UV-visible broadband photodetectors were developed. State-of-the-art GaN epilayers grown on (-201)-oriented β-Ga2O3 using AlN and GaN buffer layers are discussed, and their high optical quality without using growth enhancement techniques is demonstrated. In particular, a low lattice mismatch (⁓4.7%) between GaN and the substrate results in a low density of dislocations ~4.8Å~107 cm−2. To demonstrates the effect of (-201)-oriented β-Ga2O3 substrate on the quality of III-nitride alloys, high-quality ternary alloy InxGa1−xN film is studied, followed by the growth of high quality InxGa1−xN/GaN single and multiple quantum wells (QWs). The optical characterization and carrier dynamics by photoluminescence (PL) and time-resolved PL measurements were subsequently performed. Lastly, to investigate the performance of a vertical emitting device based on InGaN/GaN multiple QWs grown on (-201)-oriented β-Ga2O3 substrate, high-efficiency vertical-injection emitting device is developed and extensively investigated. The conductive nature of

Investigation of mixed saliva by optoelectronic methods

Science.gov (United States)

Savchenko, Ekaterina; Nepomnyashchaya, Elina; Baranov, Maksim; Velichko, Elena; Aksenov, Evgenii; Bogomaz, Tatyana

2018-04-01

At present, saliva and its properties are being actively studied. Human saliva is a unique biological material that has potential in clinical practice. A detailed analysis of the characteristics and properties of saliva is relevant for diagnostic purposes. In this paper, the properties and characteristics of saliva are studied using optoelectronic methods: dynamic light scattering, electrophoretic light scattering and optical microscopy. Mixed saliva from a healthy patient and patient with diabetes mellitus type 2 was used as an object of the study. The dynamics of the behavior of a healthy and patient with diabetes mellitus type 2 is visible according to the results obtained. All three methods confirm hypothesis of structural changes in mixed saliva in the disease of diabetes mellitus type 2.

Deformable paper origami optoelectronic devices

KAUST Repository

He, Jr-Hau; Lin, Chun-Ho

2017-01-01

Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a

Basic Electromagnetism and Materials

CERN Document Server

Moliton, André

2007-01-01

Basic Electromagnetism and Materials is the product of many years of teaching basic and applied electromagnetism. This textbook can be used to teach electromagnetism to a wide range of undergraduate science majors in physics, electrical engineering or materials science. However, by making lesser demands on mathematical knowledge than competing texts, and by emphasizing electromagnetic properties of materials and their applications, this textbook is uniquely suited to students of materials science. Many competing texts focus on the study of propagation waves either in the microwave or optical domain, whereas Basic Electromagnetism and Materials covers the entire electromagnetic domain and the physical response of materials to these waves. Professor André Moliton is Director of the Unité de Microélectronique, Optoélectronique et Polymères (Université de Limoges, France), which brings together three groups studying the optoelectronics of molecular and polymer layers, micro-optoelectronic systems for teleco...

Integrated optoelectronic oscillator.

Science.gov (United States)

Tang, Jian; Hao, Tengfei; Li, Wei; Domenech, David; Baños, Rocio; Muñoz, Pascual; Zhu, Ninghua; Capmany, José; Li, Ming

2018-04-30

With the rapid development of the modern communication systems, radar and wireless services, microwave signal with high-frequency, high-spectral-purity and frequency tunability as well as microwave generator with light weight, compact size, power-efficient and low cost are increasingly demanded. Integrated microwave photonics (IMWP) is regarded as a prospective way to meet these demands by hybridizing the microwave circuits and the photonics circuits on chip. In this article, we propose and experimentally demonstrate an integrated optoelectronic oscillator (IOEO). All of the devices needed in the optoelectronic oscillation loop circuit are monolithically integrated on chip within size of 5×6cm 2 . By tuning the injection current to 44 mA, the output frequency of the proposed IOEO is located at 7.30 GHz with phase noise value of -91 dBc/Hz@1MHz. When the injection current is increased to 65 mA, the output frequency can be changed to 8.87 GHz with phase noise value of -92 dBc/Hz@1MHz. Both of the oscillation frequency can be slightly tuned within 20 MHz around the center oscillation frequency by tuning the injection current. The method about improving the performance of IOEO is carefully discussed at the end of in this article.

Parallel optoelectronic trinary signed-digit division

Science.gov (United States)

Alam, Mohammad S.

1999-03-01

The trinary signed-digit (TSD) number system has been found to be very useful for parallel addition and subtraction of any arbitrary length operands in constant time. Using the TSD addition and multiplication modules as the basic building blocks, we develop an efficient algorithm for performing parallel TSD division in constant time. The proposed division technique uses one TSD subtraction and two TSD multiplication steps. An optoelectronic correlator based architecture is suggested for implementation of the proposed TSD division algorithm, which fully exploits the parallelism and high processing speed of optics. An efficient spatial encoding scheme is used to ensure better utilization of space bandwidth product of the spatial light modulators used in the optoelectronic implementation.

Complete diagnostics of pyroactive structures for smart systems of optoelectronics

Science.gov (United States)

Bravina, Svetlana L.; Morozovsky, Nicholas V.

1998-04-01

The results of study of pyroelectric phenomena in ferroelectric materials for evidence of the possibility to embody the functions promising for creation of smart systems for optoelectronic applications are presented. Designing such systems requires the development of methods for non- destructive complete diagnostics preferably by developing the self-diagnostic ability inherent in materials with the features of smart/intelligent ones. The complex method of complete non-destructive qualification of pyroactive materials based on the method of dynamic photopyroelectric effect allows the determination of pyroelectric, piezoelectric, ferroelectric, dielectric and thermophysical characteristics. The measuring system which allows the study of these characteristics and also memory effects, switching effects, fatigue and degradation process, self-repair process and others is presented. Sample pyroactive system with increased intelligence, such as systems with built-in adaptive controllable domain structure promising for functional optics are developed and peculiarities of their characterization are discussed.

Ab initio investigations of the strontium gallium nitride ternaries Sr 3GaN3 and Sr6GaN5: Promising materials for optoelectronic

KAUST Repository

Goumri-Said, Souraya

2013-05-31

Sr3GaN3 and Sr6GaN5 could be promising potential materials for applications in the microelectronics, optoelectronics and coating materials areas of research. We studied in detail their structural, elastic, electronic, optical as well as the vibrational properties, by means of density functional theory framework. Both of these ternaries are semiconductors, where Sr3GaN3 exhibits a small indirect gap whereas Sr6GaN5 has a large direct gap. Indeed, their optical properties are reported for radiation up to 40 eV. Charge densities contours, Hirshfeld and Mulliken populations, are reported to investigate the role of each element in the bonding. From the mechanical properties calculation, it is found that Sr6GaN5 is harder than Sr3GaN3, and the latter is more anisotropic than the former. The phonon dispersion relation, density of phonon states and the vibrational stability are reported from the density functional perturbation theory calculations. © 2013 IOP Publishing Ltd.

Research on the application of optoelectronics to nuclear power plants

International Nuclear Information System (INIS)

Shirosaki, Hidekazu; Mitsuda, Hiromichi; Kurata, Toshikazu; Soramoto, Seiki; Maekawa, Tatsuyuki.

1995-01-01

Optoelectronics, which is based on technologies such as laser diodes and optical fibers, is approaching the realm of practical application in the fields of optical fiber communications and compact disks etc,. In addition, laser enrichment, a type of uranium enrichment technique used in the nuclear field, can also be regarded as a product of optoelectronics. Application of optoelectronics in a wide range of fields is likely to continue in the future, and research is being conducted on coherent optical communication, optical integrated circuits, optical computers and other subjects in hopes of attaining practical application of these technologies in the future. On the other hand, digital control equipment and other related devices have been installed and data transfer using optical fibers has been implemented on a partial basis at nuclear power plants, and optoelectronics is anticipated to be applied on an even broader scale in the future, thereby creating the potential for improving plant reliability. In this research, we conducted an investigative study of technologies relating to optoelectronics, and proposed a remote monitoring system for manually operated valves that employs optical switches. Moreover, we conducted theoretical verification tests on the proposed system and carried out a feasibility study relating to application to nuclear power plants. As a result, the proposed system was found to be effective, and confirmed to have the potential of realization as a valve switching monitoring system. (author)

Amorphous electron-accepting materials for organic optoelectronics

NARCIS (Netherlands)

Ganesan, P.

2007-01-01

The importance of organic materials for use in electronic devices such as OLEDs, OFETs and photovoltaic cells has increased significantly over the past decade. Organic materials have been attractive candidates for such electronic devices because of their compatibility with high-throughput,

Optoelectronic interconnects for 3D wafer stacks

Science.gov (United States)

Ludwig, David; Carson, John C.; Lome, Louis S.

1996-01-01

Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

Bioinspired Transparent Laminated Composite Film for Flexible Green Optoelectronics.

Science.gov (United States)

Lee, Daewon; Lim, Young-Woo; Im, Hyeon-Gyun; Jeong, Seonju; Ji, Sangyoon; Kim, Yong Ho; Choi, Gwang-Mun; Park, Jang-Ung; Lee, Jung-Yong; Jin, Jungho; Bae, Byeong-Soo

2017-07-19

Herein, we report a new version of a bioinspired chitin nanofiber (ChNF) transparent laminated composite film (HCLaminate) made of siloxane hybrid materials (hybrimers) reinforced with ChNFs, which mimics the nanofiber-matrix structure of hierarchical biocomposites. Our HCLaminate is produced via vacuum bag compressing and subsequent UV-curing of the matrix resin-impregnated ChNF transparent paper (ChNF paper). It is worthwhile to note that this new type of ChNF-based transparent substrate film retains the strengths of the original ChNF paper and compensates for ChNF paper's drawbacks as a flexible transparent substrate. As a result, compared with high-performance synthetic plastic films, such as poly(ethylene terephthalate), poly(ether sulfone), poly(ethylene naphthalate), and polyimide, our HCLaminate is characterized to exhibit extremely smooth surface topography, outstanding optical clarity, high elastic modulus, high dimensional stability, etc. To prove our HCLaminate as a substrate film, we use it to fabricate flexible perovskite solar cells and a touch-screen panel. As far as we know, this work is the first to demonstrate flexible optoelectronics, such as flexible perovskite solar cells and a touch-screen panel, actually fabricated on a composite film made of ChNF. Given its desirable macroscopic properties, we envision our HCLaminate being utilized as a transparent substrate film for flexible green optoelectronics.

Optoelectronic switch matrix as a look-up table for residue arithmetic.

Science.gov (United States)

Macdonald, R I

1987-10-01

The use of optoelectronic matrix switches to perform look-up table functions in residue arithmetic processors is proposed. In this application, switchable detector arrays give the advantage of a greatly reduced requirement for optical sources by comparison with previous optoelectronic residue processors.

Direct Photolithography on Molecular Crystals for High Performance Organic Optoelectronic Devices.

Science.gov (United States)

Yao, Yifan; Zhang, Lei; Leydecker, Tim; Samorì, Paolo

2018-05-23

Organic crystals are generated via the bottom-up self-assembly of molecular building blocks which are held together through weak noncovalent interactions. Although they revealed extraordinary charge transport characteristics, their labile nature represents a major drawback toward their integration in optoelectronic devices when the use of sophisticated patterning techniques is required. Here we have devised a radically new method to enable the use of photolithography directly on molecular crystals, with a spatial resolution below 300 nm, thereby allowing the precise wiring up of multiple crystals on demand. Two archetypal organic crystals, i.e., p-type 2,7-diphenyl[1]benzothieno[3,2- b][1]benzothiophene (Dph-BTBT) nanoflakes and n-type N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) nanowires, have been exploited as active materials to realize high-performance top-contact organic field-effect transistors (OFETs), inverter and p-n heterojunction photovoltaic devices supported on plastic substrate. The compatibility of our direct photolithography technique with organic molecular crystals is key for exploiting the full potential of organic electronics for sophisticated large-area devices and logic circuitries, thus paving the way toward novel applications in plastic (opto)electronics.

GaAs optoelectronic neuron arrays

Science.gov (United States)

Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

1993-01-01

A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance

KAUST Repository

Banavoth, Murali

2016-12-14

Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including various fabrication methods, device architectures, and surface passivation, progress is yet to be made in understanding the actual operational temperature on the electronic properties and the device performances. Therefore, the substantial effect of temperature on the optoelectronic properties, charge separation, charge recombination dynamics, and photoconversion efficiency are explored. The results clearly demonstrated a significant enhancement in the carrier mobility, photocurrent, charge carrier lifetime, and solar cell performance in the 60 ± 5 °C temperature range. In this temperature range, perovskite crystal exhibits a highly symmetrical relaxed cubic structure with well-aligned domains that are perpendicular to a principal axis, thereby remarkably improving the device operation. This finding provides a new key variable component and paves the way toward using perovskite crystals in highly efficient photovoltaic cells.

Synthesis of thin films and materials utilizing a gaseous catalyst

Science.gov (United States)

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Practical opto-electronics an illustrated guide for the laboratory

CERN Document Server

Protopopov, Vladimir

2014-01-01

This book explains how to create opto-electronic systems in a most efficient way, avoiding typical mistakes. It covers light detection techniques, imaging, interferometry, spectroscopy, modulation-demodulation, heterodyning, beam steering, and many other topics common to laboratory applications. The focus is made on self-explanatory figures rather than on words. The book guides the reader through the entire process of creating problem-specific opto-electronic systems, starting from optical source, through beam transportation optical arrangement, to photodetector and data acquisition system. The relevant basics of beam propagation and computer-based raytracing routines are also explained, and sample codes are listed. the book teaches important know-how and practical tricks that are never disclosed in scientific publications.  The book can become the reader's personal adviser in the world of opto-electronics and navigator in the ocean of the market of optical components and systems. Succinct, well-illustrate...

Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

Energy Technology Data Exchange (ETDEWEB)

Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

2010-07-15

Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Optoelectronic devices product assurance guideline for space application

Science.gov (United States)

Bensoussan, A.; Vanzi, M.

2017-11-01

New opportunities are emerging for the implementation of hardware sub-systems based on OptoElectronic Devices (OED) for space application. Since the end of this decade the main players for space systems namely designers and users including Industries, Agencies, Manufacturers and Laboratories are strongly demanding of adequate strategies to qualify and validate new optoelectronics products and sub-systems [1]. The long term space application mission will require to address either inter-satellite link (free space communication, positioning systems, tracking) or intra-satellite connectivity/flexibility/reconfigurability or high volume of data transfer between equipment installed into payload.

Advanced Optoelectronic Components for All-Optical Networks

National Research Council Canada - National Science Library

Shapiro, Jeffrey H

2002-01-01

Under APOSR Grant F49620-96-1-0126, 'Advanced Optoelectronic Components for All-Optical Networks', we have worked to develop key technologies and components to substantially improve the performance...

Flexible Synthetic Semiconductor Applied in Optoelectronic Organic Sensor

Directory of Open Access Journals (Sweden)

Andre F. S. Guedes

2017-06-01

Full Text Available The synthesis and application of new nanostructured organic materials, for the development of technology based on organic devices, have taken great interest from the scientific community. The greatest interest in studying organic semiconductor materials has been connected to its already known potential applications, such as: batteries, organic solar cells, flexible organic solar cells, organic light emitting diodes, organic sensors and others. Phototherapy makes use of different radiation sources, and the treatment of hyperbilirubinemia the most common therapeutic intervention occurs in the neonatal period. In this work we developed an organic optoelectronic sensor capable of detecting and determining the radiation dose rate emitted by the radiation source of neonatal phototherapy equipment. The sensors were developed using optically transparent substrate with Nanostructured thin film layers of Poly(9-Vinylcarbazole covered by a layer of Poly(P-Phenylene Vinylene. The samples were characterized by UV-Vis Spectroscopy, Electrical Measurements and SEM. With the results obtained from this study can be developed dosimeters organics to the neonatal phototherapy equipment.

The optoelectronic chameleon - GaN-based light emitters from the UV to green

Energy Technology Data Exchange (ETDEWEB)

Kneissl, Michael [Institut fuer Festkoerperphysik, Technische Universitaet Berlin (Germany)

2008-07-01

Group III-nitrides have evolved into one of the most versatile and important semiconductor materials for optoelectronic devices. GaN-based blue, green and white light emitting diodes have already entered many parts of everyday life and violet lasers are expected to be following soon. However, considering the extraordinary electronic properties and the wide spectral range that is accessible through nitride materials, it appears that it we have just touched the tip of the iceberg. We discuss some of the new fields of research for InAlGaN materials and devices and review progress in the development of near and deep ultraviolet light emitting diodes, as well as growth and optical properties of InN and indium rich InGaN alloys for emitter in the blue-green spectral range and beyond.

Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

Science.gov (United States)

Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

2014-02-21

The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

Science.gov (United States)

Liang, Yu Teng

Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic

Progress in the optoelectronic analog signal transfer for high energy particle detectors

International Nuclear Information System (INIS)

Tsang, T.; Radeka, V.

1992-05-01

We report the progress in the development of a radiation hard Optoelectronic analog system to transfer particle detector signals with high accuracy. We will present the motivation of this study, the operating principle of the optoelectronic system, the system noise study, the recent R ampersand D efforts on radiation effect, temperature stability, and the realization of an integrated l x l6 optical modulator. The issue of photon source for driving such a large-scale optoelectronic modulators is a major concern. We will address this problem by examining different possible photon sources and comment on other possible alternative for signal transfer

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

Science.gov (United States)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

High bandgap III-V alloys for high efficiency optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Critical difference between optoelectronic properties of α- and β-SnWO4semiconductors: A DFT/HSE06 and experimental investigation

KAUST Repository

Harb, Moussab

2016-02-03

The optoelectronic properties of β-SnWO4 are investigated in details using experiments on thin film generated by rapid quenching and the first-principles quantum calculations based on the density functional theory (DFT, including the perturbation approach DFPT) and employing the PBE and the range-separated hybrid exchange-correlation HSE06 functionals. The obtained bandgap, optical absorption coefficient, dielectric constant, and charge-carrier effective masses for β-SnWO4 exhibit data irreconcilable with the reported values: e.g., a large and direct bandgap of 4.30eV (UV-responsive), inconsistent with the values in the literature (visible-responsive). These properties obtained for β-SnWO4 are distinctive from those for α-SnWO4: an indirect bandgap of 1.52eV with higher charge mobilities. These data of intrinsic stoichiometric materials suggest that the literature reported nonstoichiometric materials where defects significantly influence the optoelectronic properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High efficiency optoelectronic terahertz sources

Science.gov (United States)

Lampin, Jean-François; Peytavit, Emilien; Akalin, Tahsin; Ducournau, G.; Hindle, Francis; Mouret, Gael

2010-08-01

We have developed a new generation of optoelectronic large bandwidth terahertz sources based on TEM horn antennas monolithically integrated with several types of photodetectors: low-temperature grown GaAs (LTG-GaAs) planar photoconductors, vertically integrated LTG-GaAs photoconductors on silicon substrate and uni-travelling-carrier photodiodes. Results of pulsed (time-domain) and photomixing (CW, frequency domain) experiments are presented.

Charge carrier dynamics in photovoltaic materials

NARCIS (Netherlands)

Jensen, S.A.

2014-01-01

We employ the experimental technique THz Time Domain spectroscopy (THz-TDS) to study the optoelectronic properties of potential photovoltaic materials. This all-optical method is useful for probing photoconductivities in a range of materials on ultrafast timescales without the application of

Optoelectronics in TESLA, LHC and pi-of-the-sky experiments

CERN Document Server

Romaniuk, Ryszard; Simrock, Stefan; Wrochna, Grzegorz

2004-01-01

Optical and optoelectronics technologies are more and more widely used in the biggest world experiments of high energy and nuclear physics, as well as in the astronomy. The paper is a kind of a broad digest describing the usage of optoelectronics is such experiments and information about some of the involved teams. The described experiments include: TESLA linear accelerator and FEL, Compact Muon Solenoid at LHC and recently started pi-of-the-sky global gamma ray bursts (with associated optical flashes) observation experiment. Optoelectronics and photonics offer several key features which are either extending the technical parameters of existing solutions or adding quite new practical application possibilities. Some of these favorable features of photonic systems are: high selectivity of optical sensors, immunity to some kinds of noise processes, extremely broad bandwidth exchangeable for either terabit rate transmission or ultrashort pulse generation, parallel image processing capability, etc. The following g...

Optoelectronic properties of valence-state-controlled amorphous niobium oxide

Science.gov (United States)

Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

2016-06-01

In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin

2016-09-06

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus.

Science.gov (United States)

Whitney, William S; Sherrott, Michelle C; Jariwala, Deep; Lin, Wei-Hsiang; Bechtel, Hans A; Rossman, George R; Atwater, Harry A

2017-01-11

We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. We interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

Exciton confinement in organic dendrimer quantum wells for opto-electronic applications

Science.gov (United States)

Lupton, J. M.; Samuel, I. D. W.; Burn, P. L.; Mukamel, S.

2002-01-01

Organic dendrimers are a fascinating new class of materials for opto-electronic applications. We present coupled electronic oscillator calculations on novel nanoscale conjugated dendrimers for use in organic light-emitting diodes. Strong confinement of excitations at the center of the dendrimers is observed, which accounts for the dependence of intermolecular interactions and charge transport on the degree of branching of the dendrimer. The calculated absorption spectra are in excellent agreement with the measured data and show that benzene rings are shared between excitations on the linear segments of the hyperbranched molecules. The coupled electronic oscillator approach is ideally suited to treat large dendritic molecules.

Electronic and optoelectronic device applications based on ReS2

Science.gov (United States)

Liu, Erfu; Long, Mingsheng; Wang, Yaojia; Pan, Yiming; Ho, Chinghwa; Wang, Baigeng; Miao, Feng

Rhenium disulfide (ReS2) is a unique semiconducting TMD with distorted 1T structure and weak interlayer coupling. We have previously investigated its in-plane anisotropic property and electronic applications on FET and digital inverters. In this talk, we will present high responsivity phototransistors based on few-layer ReS2. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is one of the highest value among individual two-dimensional materials with similar device structures. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. The existence of trap states is proved by temperature dependent transport measurements. It further enables the detection of weak signals. Our studies underscore ReS2 as a promising material for future electronic and sensitive optoelectronic applications.

Standard cell-based implementation of a digital optoelectronic neural-network hardware.

Science.gov (United States)

Maier, K D; Beckstein, C; Blickhan, R; Erhard, W

2001-03-10

A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

Science.gov (United States)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

Unraveling the Role of Π - Conjugation in Thiophene Oligomers for Optoelectronic Properties by DFT/TDDFT Approach

Directory of Open Access Journals (Sweden)

Gajalakshmi

Full Text Available ABSTRACT Thiophene oligomer has been investigated using DFT/TDDFT calculations with an aim to check its suitability for opto electronic applications and also to analyse the influence of π-bridge. Our results revealed that thiophene oligomers have excellent π-conjugation throughout. FMO analysis give an estimate of band gap of thiophene oligomer and further revealed HOMO are localized on π - bridge, donor group and LUMO are localized on π - bridge and acceptor group. A TDDFT calculation has been performed to understand the absorption properties of them in gas phase and solvent phase. PCM calculations convey that absorption maxima show positive solvatochromism. Among the designed candidates, the one with more π - bridge show higher wavelength of absorption maxima and would be a choice for better optoelectronic materials. NBO analysis provides support for complete delocalization in these systems. It is interesting to note that oligomer with more π-bridge display an enhanced optoelectronic properties than with less π - bridge.

Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis; Fabrim, Zacarias Eduardo; Ahmadpour, Mehrad

2015-01-01

In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of the reported films by increasing the oxygen partial pressure from 1.00 ? 10?3 mbar to 1.37 ? 10?3 mbar during...... significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generat- ing a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic...... properties in these films holds strong promise for their implementation in optoelectronic devices....

Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

International Nuclear Information System (INIS)

Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

2015-01-01

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

Study on optoelectronic properties of Spiro-CN for developing an efficient OLED

Science.gov (United States)

Mishra, Ashok Kumar

2018-05-01

There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) Spiro-CN (spirobifluorene skeletons) Spiro is one of these reported noble metal-free TADF molecules which offers unique optical and electronic properties arising from the efficient transition and reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the Spiro-CN compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the Spiro-CN organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).

Structural phase transition and opto-electronic properties of NaZnAs

Energy Technology Data Exchange (ETDEWEB)

Djied, A.; Seddik, T.; Merabiha, O. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 (Algeria); Murtaza, G. [Materials Modeling Lab, Department of Physics, Islamia College University, Peshawar (Pakistan); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 (Algeria); Ahmed, R., E-mail: rashidahmed@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Bin-Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Uğur, Ş. [Department of Physics, Faculty of Sciences, Gazi University, 06500 Teknikokullar, Ankara (Turkey); Bouhemadou, A. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University Setif 1, 19000 Setif (Algeria)

2015-02-15

Highlights: • First competent characterizations of NaZnAs at the level of FP-LAPW+lo. • NaZnAs, a potential alternative candidate to III-V for photovoltaic applications. • NaZnAs, a cheaper and abundantly available direct band gap semiconductor. • Potential material for solar radiation absorber from infrared to ultraviolet. - Abstract: In this study, we predict the structural phase transitions as well as opto-electronic properties of the filled-tetrahedral (Nowotny-Juza) NaZnAs compound. Calculations employ the full potential (FP) linearized augmented plane wave (LAPW) plus local orbitals (lo) scheme. The exchange-correlation potential is treated within the generalized gradient approximation of Perdew-Burke and Ernzerhof (GGA-PBE). In addition, Tran and Blaha (TB) modified Becke-Johnson (mBJ) potential is also used to obtain more accurate optoelectronic properties. Geometry optimization is performed to obtain reliable total energies and other structural parameters for each NaZnAs phase. In our study, the sequence of the structural phase transition on compression is Cu{sub 2}Sb-type → β → α phase. NaZnAs is a direct (Γ-Γ) band gap semiconductor for all the structural phases. However, compared to PBE-GGA, the mBJ approximation reproduces better fundamental band gaps. Moreover, for insight into its potential for photovoltaic applications, different optical parameters are studied.

Structural phase transition and opto-electronic properties of NaZnAs

International Nuclear Information System (INIS)

Djied, A.; Seddik, T.; Merabiha, O.; Murtaza, G.; Khenata, R.; Ahmed, R.; Bin-Omran, S.; Uğur, Ş.; Bouhemadou, A.

2015-01-01

Highlights: • First competent characterizations of NaZnAs at the level of FP-LAPW+lo. • NaZnAs, a potential alternative candidate to III-V for photovoltaic applications. • NaZnAs, a cheaper and abundantly available direct band gap semiconductor. • Potential material for solar radiation absorber from infrared to ultraviolet. - Abstract: In this study, we predict the structural phase transitions as well as opto-electronic properties of the filled-tetrahedral (Nowotny-Juza) NaZnAs compound. Calculations employ the full potential (FP) linearized augmented plane wave (LAPW) plus local orbitals (lo) scheme. The exchange-correlation potential is treated within the generalized gradient approximation of Perdew-Burke and Ernzerhof (GGA-PBE). In addition, Tran and Blaha (TB) modified Becke-Johnson (mBJ) potential is also used to obtain more accurate optoelectronic properties. Geometry optimization is performed to obtain reliable total energies and other structural parameters for each NaZnAs phase. In our study, the sequence of the structural phase transition on compression is Cu 2 Sb-type → β → α phase. NaZnAs is a direct (Γ-Γ) band gap semiconductor for all the structural phases. However, compared to PBE-GGA, the mBJ approximation reproduces better fundamental band gaps. Moreover, for insight into its potential for photovoltaic applications, different optical parameters are studied

Optoelectronic and nonlinear optical processes in low dimensional ...

Indian Academy of Sciences (India)

Optoelectronic process; nonlinear optical process; semiconductor. Quest for ever faster and intelligent information processing technologies has sparked ..... Schematic energy level diagram for the proposed 4-level model. States other than the.

Modelling of optoelectronic circuits based on resonant tunneling diodes

Science.gov (United States)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Basic opto-electronics on silicon for sensor applications

NARCIS (Netherlands)

Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

1994-01-01

A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

The optoelectronic properties of a photosystem I-carbon nanotube hybrid system

International Nuclear Information System (INIS)

Kaniber, Simone M; Holleitner, Alexander W; Simmel, Friedrich C; Carmeli, Itai

2009-01-01

The photoconductance properties of photosystem I (PSI) covalently bound to carbon nanotubes (CNTs) are measured. We demonstrate that the PSI forms active electronic junctions with the CNTs, enabling control of the CNTs' photoconductance by the PSI. In order to electrically contact the photoactive proteins, a cysteine mutant is generated at one end of the PSI by genetic engineering. The CNTs are covalently bound to this reactive group using carbodiimide chemistry. We detect an enhanced photoconductance signal of the hybrid material at photon wavelengths resonant to the absorption maxima of the PSI compared to non-resonant wavelengths. The measurements prove that it is feasible to integrate photosynthetic proteins into optoelectronic circuits at the nanoscale.

The optoelectronic properties of a photosystem I-carbon nanotube hybrid system

Energy Technology Data Exchange (ETDEWEB)

Kaniber, Simone M; Holleitner, Alexander W [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany); Simmel, Friedrich C [LMU Munich, Geschwister-Scholl-Platz 1, D-80539 Muenchen (Germany); Carmeli, Itai, E-mail: holleitner@wsi.tum.d, E-mail: itai@post.tau.ac.i [Chemistry Department and NIBN, Ben Gurion University, 84105 Be' er Sheva (Israel)

2009-08-26

The photoconductance properties of photosystem I (PSI) covalently bound to carbon nanotubes (CNTs) are measured. We demonstrate that the PSI forms active electronic junctions with the CNTs, enabling control of the CNTs' photoconductance by the PSI. In order to electrically contact the photoactive proteins, a cysteine mutant is generated at one end of the PSI by genetic engineering. The CNTs are covalently bound to this reactive group using carbodiimide chemistry. We detect an enhanced photoconductance signal of the hybrid material at photon wavelengths resonant to the absorption maxima of the PSI compared to non-resonant wavelengths. The measurements prove that it is feasible to integrate photosynthetic proteins into optoelectronic circuits at the nanoscale.

77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Science.gov (United States)

2012-10-30

... Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Institution... certain optoelectronic devices for fiber optic communications, components thereof, and products containing... optoelectronic devices for fiber optic communications, components thereof, and products containing the same that...

Terahertz optoelectronics with surface plasmon polariton diode.

Science.gov (United States)

Vinnakota, Raj K; Genov, Dentcho A

2014-05-09

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

Optoelectronic properties of higher acenes, their BN analogue and substituted derivatives

International Nuclear Information System (INIS)

Armaković, Stevan; Armaković, Sanja J.; Holodkov, Vladimir; Pelemiš, Svetlana

2016-01-01

We have investigated optoelectronic properties of higher acenes: pentacene, hexacene, heptacene, octacene, nonacene, decacene and their boron-nitride (BN) analogues, within the framework of density functional theory (DFT). We have also investigated the optoelectronic properties of acenes modified by BN substitution. Calculated optoelectronic properties encompasses: oxidation and reduction potentials, electron and hole reorganization energies and energy difference between excited first singlet and triplet states ΔE(S_1−T_1). Oxidation and reduction potentials indicate significantly better stability of BN analogues, comparing with their all-carbon relatives. Although higher acenes possess lower electron and hole reorganization energies, with both best values much lower than 0.1 eV, their BN analogues also have competitive values of reorganization energies, especially for holes for which reorganization energy is also lower than 0.1 eV. On the other hand ΔE(S_1−T_1) is much better for BN analogues, having values that indicate that BN analogues are possible applicable for thermally activated delayed fluorescence. - Highlights: • Optoelectronic properties of structures based on higher acenes have been investigated. • Oxidation and reduction potentials together with reorganization energies are calculated. • TADF is analyzed through calculation of ΔE(S_1−T_1), which is much better for BN analogues. • Reorganization energies of acenes improve with the increase of number of benzene rings.

Optoelectronic Picosecond Detection of Synchrotron X-rays

Energy Technology Data Exchange (ETDEWEB)

Durbin, Stephen M. [Purdue Univ., West Lafayette, IN (United States)

2017-08-04

The goal of this research program was to develop a detector that would measure x-ray time profiles with picosecond resolution. This was specifically aimed for use at x-ray synchrotrons, where x-ray pulse profiles have Gaussian time spreads of 50-100 ps (FWHM), so the successful development of such a detector with picosecond resolution would permit x-ray synchrotron studies to break through the pulse width barrier. That is, synchrotron time-resolved studies are currently limited to pump-probe studies that cannot reveal dynamics faster than ~50 ps, whereas the proposed detector would push this into the physically important 1 ps domain. The results of this research effort, described in detail below, are twofold: 1) the original plan to rely on converting electronic signals from a semiconductor sensor into an optical signal proved to be insufficient for generating signals with the necessary time resolution and sensitivity to be widely applicable; and 2) an all-optical method was discovered whereby the x-rays are directly absorbed in an optoelectronic material, lithium tantalate, which can then be probed by laser pulses with the desired picosecond sensitivity for detection of synchrotron x-rays. This research program has also produced new fundamental understanding of the interaction of x-rays and optical lasers in materials that has now created a viable path for true picosecond detection of synchrotron x-rays.

Design, Synthesis and Optoelectronic Properties of Unsymmetrical Oxadiazole Based Indene Substituted Derivatives as Deep Blue Fluoroscent Materials.

Science.gov (United States)

Belavagi, Ningaraddi S; Deshapande, Narahari; Pujar, G H; Wari, M N; Inamdar, S R; Khazi, Imtiyaz Ahmed M

2015-09-01

A series of novel unsymmetrically substituted indene-oxadiazole derivatives (3a-f) have been designed and synthesized by employing palladium catalysed Suzuki cross coupling reaction in high yields. The structural integrity of all the novel compounds was established by (1)H, (13)C NMR and LC/MS analysis. These compounds are amorphous in nature and are remarkably stable to long term storage under ambient conditions. The optoelectronic properties have been studied in detail using UV-Vis absorption and Fluorescence spectroscopy. All compounds emit intense blue to green-blue fluoroscence with high quantum yields. Time resolved measurments have shown life times in the range of 1.28 to 4.51 ns. The density functional theory (DFT) calculations were carried out for all the molecules to understand their structure-property relationships. Effect of concentration studies has been carried out in different concentrations for both absorption and emission properties and from this we have identified the optimized fluoroscence concentrations for all these compounds. The indene substituted anthracene-oxadiazole derivative (3f) showed significant red shift (λmax (emi) = 490 nm) and emits intense green-blue fluoroscence with largest stokes shift of 145 nm. This compound also exhibited highest fluoroscence life time (τ) of 4.51 ns, which is very close to the standard dye coumarin-540A (4.63 ns) and better than fluorescein-548 (4.10 ns). The results demonstrated that the novel unsymmetrical indene-substituted oxadiazole derivatives could play important role in organic optoelectronic applications, such as organic light-emitting diodes (OLEDs) or as models for investigating the fluorescent structure-property relationship of the indene-functionalized oxadiazole derivatives.

Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

2017-01-01

The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates

International Nuclear Information System (INIS)

Byun, Kwangsub; Cho, Kyoungah; Kim, Sangsig

2010-01-01

The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.

A New Generation of Luminescent Materials Based on Low-Dimensional Perovskites

KAUST Repository

Pan, Jun

2017-06-02

Low-dimensional perovskites with high luminescence properties are promising materials for optoelectronic applications. In this article, properties of two emerging types of low-dimensional perovskites are discussed, including perovskite quantum dots CsPbX3 (X = Cl, Br or I) and zero-dimensional perovskite Cs4PbBr6. Moreover, their application for light down conversion in LCD backlighting systems and in visible light communication are also presented. With their superior optical properties, we believe that further development of these materials will potentially open more prospective applications, especially for optoelectronics devices.

Nanocrystalline CsPbBr3 thin films: a grain boundary opto-electronic study

Science.gov (United States)

Conte, G.; Somma, F.; Nikl, M.

2005-01-01

CsPbBr3 thin films with nanocrystalline morphology were studied by using optoelectronic techniques to infer the grain boundary region in respect of the crystallite's interior performance. Co-evaporation of puri-fied powders or crushed Bridgman single crystals were used to deposit materials and compare recombina-tion mechanism and dielectric relaxation processes within them. Nanosecond photoconduction decay was observed on both materials as well as activated hopping transport. An asymmetric Debye-like peak was evaluated from impedance spectroscopy with a FWHM value, which remains constant for 1.25 +/- 0.02 deca-des, addressing the presence of a tight conductivity relaxation times distribution. The evaluated activation energy, equal to 0.72 +/- 0.05 eV, similar to that estimated by DC measurements, is well smaller then that expected for an intrinsic material with exciton absorption at 2.36 eV. A simple model based on Voigt's elements was used to model the electronic characteristics of these nanostructured materials, to discuss observed results and define the role played by grain boundaries.

Debye screening length effects of nanostructured materials

CERN Document Server

Ghatak, Kamakhya Prasad

2014-01-01

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped ...

Optoelectronic properties of higher acenes, their BN analogue and substituted derivatives

Energy Technology Data Exchange (ETDEWEB)

Armaković, Stevan, E-mail: stevan.armakovic@df.uns.ac.rs [University of Novi Sad, Faculty of Sciences, Department of Physics, Trg Dositeja Obradovića 4, 21000, Novi Sad (Serbia); Armaković, Sanja J. [University of Novi Sad, Faculty of Sciences, Department of Chemistry, Biochemistry and Environmental Protection, Trg Dositeja Obradovića 3, 21000, Novi Sad (Serbia); Holodkov, Vladimir [Educons University, Faculty of Sport and Tourism - TIMS, Radnička 30a, 21000, Novi Sad (Serbia); Pelemiš, Svetlana [University of East Sarajevo, Faculty of Technology, Karakaj bb, 75400, Zvornik, Republic of Srpska, Bosnia and Herzegovina (Bosnia and Herzegovina)

2016-02-15

We have investigated optoelectronic properties of higher acenes: pentacene, hexacene, heptacene, octacene, nonacene, decacene and their boron-nitride (BN) analogues, within the framework of density functional theory (DFT). We have also investigated the optoelectronic properties of acenes modified by BN substitution. Calculated optoelectronic properties encompasses: oxidation and reduction potentials, electron and hole reorganization energies and energy difference between excited first singlet and triplet states ΔE(S{sub 1}−T{sub 1}). Oxidation and reduction potentials indicate significantly better stability of BN analogues, comparing with their all-carbon relatives. Although higher acenes possess lower electron and hole reorganization energies, with both best values much lower than 0.1 eV, their BN analogues also have competitive values of reorganization energies, especially for holes for which reorganization energy is also lower than 0.1 eV. On the other hand ΔE(S{sub 1}−T{sub 1}) is much better for BN analogues, having values that indicate that BN analogues are possible applicable for thermally activated delayed fluorescence. - Highlights: • Optoelectronic properties of structures based on higher acenes have been investigated. • Oxidation and reduction potentials together with reorganization energies are calculated. • TADF is analyzed through calculation of ΔE(S{sub 1}−T{sub 1}), which is much better for BN analogues. • Reorganization energies of acenes improve with the increase of number of benzene rings.

Digital optical computers at the optoelectronic computing systems center

Science.gov (United States)

Jordan, Harry F.

1991-01-01

The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

Transferable, conductive TiO{sub 2} nanotube membranes for optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Liu, Guohua [School of Energy and Environment, Anhui University of Technology, Maanshan 243002 (China); Department of Micro and Nano Systems Technology, Vestfold University College, Horten 3184 (Norway); Chen, Ting [School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275 (China); Sun, Yunlan; Chen, Guang [School of Energy and Environment, Anhui University of Technology, Maanshan 243002 (China); Wang, Kaiying, E-mail: Kaiying.Wang@hbv.no [Department of Micro and Nano Systems Technology, Vestfold University College, Horten 3184 (Norway)

2014-08-30

Graphical abstract: An optoelectronic device with vertical architecture offers straight conducting filaments for electron transportation. - Highlights: • Highly porous TiO{sub 2} nanotube membranes are prepared by two-step anodization. • An optoelectronic device is integrated with photocurrent transportation along the nanotube axial. • Straight conducting nano-filaments are beneficial for electron transportation. • Photoconductive performances are demonstrated under front/back-illumination. - Abstract: We report a facile approach for preparing free-standing and crystalline TiO{sub 2} nanotube membranes (TNMs) by taking advantage of differential mechanical stress between two anodic layers. The membrane exhibits visible light transmittance (∼40%) and UV absorption (∼99%) with good flexibility, which is favorable to integrate with substrates in optoelectronics. A sandwich-type device is assembled through stacking the membrane and substrates. The dependence of current-perpendicular-to-membrane vs applied voltage shows a remarkable photoconductive performance for both front and back illumination. The photocurrent value increases ∼2 or 3 orders magnitude under UV light radiation as compared to that in darkness. The photoresponse is arisen from high internal gain caused by hole trapping along the nanotube walls. This work is crucial for understanding intrinsic optical properties of nanostructured membranes.

Commercialization issues and funding opportunities for high-performance optoelectronic computing modules

Science.gov (United States)

Hessenbruch, John M.; Guilfoyle, Peter S.

1997-01-01

Low power, optoelectronic integrated circuits are being developed for high speed switching and data processing applications. These high performance optoelectronic computing modules consist of three primary components: vertical cavity surface emitting lasers, diffractive optical interconnect elements, and detector/amplifier/laser driver arrays. Following the design and fabrication of an HPOC module prototype, selected commercial funding sources will be evaluated to support a product development stage. These include the formation of a strategic alliance with one or more microprocessor or telecommunications vendors, and/or equity investment from one or more venture capital firms.

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

Science.gov (United States)

Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

2010-05-20

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

Electron microscopy study of advanced heterostructures for optoelectronics

NARCIS (Netherlands)

Katcki, J.; Ratajczak, J.; Phillipp, F.; Muszalski, J.; Bugajski, M.; Chen, J.X.; Fiore, A.

2003-01-01

The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots,

Supramolecular fluorene based materials

OpenAIRE

Abbel, R.J.

2008-01-01

This thesis describes the use of noncovalent interactions in order to manipulate and control the self-assembly and morphology of electroactive fluorene-based materials. The supramolecular arrangement of p-conjugated polymers and oligomers can strongly influence their electronic and photophysical properties. Therefore, a detailed understanding of such organisation processes is essential for the optimisation of the performance of these materials as applied in optoelectronic devices. In order to...

Synthesis and Optoelectronic Applications of Graphene/Transition Metal Dichalcogenides Flat-Pack Assembly

KAUST Repository

Li, Henan; Shi, Yumeng; Li, Lain-Jong

2017-01-01

Being a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.

Synthesis and Optoelectronic Applications of Graphene/Transition Metal Dichalcogenides Flat-Pack Assembly

KAUST Repository

Li, Henan

2017-11-16

Being a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.

Strain-tuned optoelectronic properties of hollow gallium sulphide microspheres

Science.gov (United States)

Zhang, Yin; Chen, Chen; Liang, C. Y.; Liu, Z. W.; Li, Y. S.; Che, Renchao

2015-10-01

Sulfide semiconductors have attracted considerable attention. The main challenge is to prepare materials with a designable morphology, a controllable band structure and optoelectronic properties. Herein, we report a facile chemical transportation reaction for the synthesis of Ga2S3 microspheres with novel hollow morphologies and partially filled volumes. Even without any extrinsic dopant, photoluminescence (PL) emission wavelength could be facilely tuned from 635 to 665 nm, depending on its intrinsic inhomogeneous strain distribution. Geometric phase analysis (GPA) based on high-resolution transmission electron microscopy (HRTEM) imaging reveals that the strain distribution and the associated PL properties can be accurately controlled by changing the growth temperature gradient, which depends on the distance between the boats used for raw material evaporation and microsphere deposition. The stacking-fault density, lattice distortion degree and strain distribution at the shell interfacial region of the Ga2S3 microspheres could be readily adjusted. Ab initio first-principles calculations confirm that the lowest conductive band (LCB) is dominated by S-3s and Ga-4p states, which shift to the low-energy band as a result of the introduction of tensile strain, well in accordance with the observed PL evolution. Therefore, based on our strain driving strategy, novel guidelines toward the reasonable design of sulfide semiconductors with tunable photoluminescence properties are proposed.Sulfide semiconductors have attracted considerable attention. The main challenge is to prepare materials with a designable morphology, a controllable band structure and optoelectronic properties. Herein, we report a facile chemical transportation reaction for the synthesis of Ga2S3 microspheres with novel hollow morphologies and partially filled volumes. Even without any extrinsic dopant, photoluminescence (PL) emission wavelength could be facilely tuned from 635 to 665 nm, depending on its

A whole-process progressive training mode to foster optoelectronic students' innovative practical ability

Science.gov (United States)

Zhong, Hairong; Xu, Wei; Hu, Haojun; Duan, Chengfang

2017-08-01

This article analyzes the features of fostering optoelectronic students' innovative practical ability based on the knowledge structure of optoelectronic disciplines, which not only reveals the common law of cultivating students' innovative practical ability, but also considers the characteristics of the major: (1) The basic theory is difficult, and the close combination of science and technology is obvious; (2)With the integration of optics, mechanics, electronics and computer, the system technology is comprehensive; (3) It has both leading-edge theory and practical applications, so the benefit of cultivating optoelectronic students is high ; (4) The equipment is precise and the practice is costly. Considering the concept and structural characteristics of innovative and practical ability, and adhering to the idea of running practice through the whole process, we put forward the construction of three-dimensional innovation and practice platform which consists of "Synthetically Teaching Laboratory + Innovation Practice Base + Scientific Research Laboratory + Major Practice Base + Joint Teaching and Training Base", and meanwhile build a whole-process progressive training mode to foster optoelectronic students' innovative practical ability, following the process of "basic experimental skills training - professional experimental skills training - system design - innovative practice - scientific research project training - expanded training - graduation project": (1) To create an in - class practical ability cultivation environment that has distinctive characteristics of the major, with the teaching laboratory as the basic platform; (2) To create an extra-curricular innovation practice activities cultivation environment that is closely linked to the practical application, with the innovation practice base as a platform for improvement; (3) To create an innovation practice training cultivation environment that leads the development of cutting-edge, with the scientific

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Noninvasive Optoelectronic Assessment of Induced Sagittal Imbalance Using the Vicon System.

Science.gov (United States)

Ould-Slimane, Mourad; Latrobe, Charles; Michelin, Paul; Chastan, Nathalie; Dujardin, Franck; Roussignol, Xavier; Gauthé, Rémi

2017-06-01

Spinal diseases often induce gait disorders with multifactorial origins such as lumbar pain, radicular pain, neurologic complications, or spinal deformities. However, radiography does not permit an analysis of spinal dynamics; therefore, sagittal balance dynamics during gait remain largely unexplored. This prospective and controlled pilot study assessed the Vicon system for detecting sagittal spinopelvic imbalance, to determine the correlations between optoelectronic and radiographic parameters. Reversible anterior sagittal imbalance was induced in 24 healthy men using a thoracolumbar corset. Radiographic, optoelectronic, and comparative analyses were conducted. Corset wearing induced significant variations in radiographic parameters indicative of imbalance; the mean C7-tilt and d/D ratio increased by 15° ± 7.4° and 359%, respectively, whereas the mean spinosacral angle decreased by 16.8° ± 8° (all P imbalance; the mean spinal angle increased by 15.4° ± 5.6° (P imbalance detected using the Vicon system. Optoelectronic C7'S1' correlated with radiographic C7-tilt and d/D ratio. Copyright © 2017 Elsevier Inc. All rights reserved.

Optical and Optoelectronic Property Analysis of Nanomaterials inside Transmission Electron Microscope.

Science.gov (United States)

Fernando, Joseph F S; Zhang, Chao; Firestein, Konstantin L; Golberg, Dmitri

2017-12-01

In situ transmission electron microscopy (TEM) allows one to investigate nanostructures at high spatial resolution in response to external stimuli, such as heat, electrical current, mechanical force and light. This review exclusively focuses on the optical, optoelectronic and photocatalytic studies inside TEM. With the development of TEMs and specialized TEM holders that include in situ illumination and light collection optics, it is possible to perform optical spectroscopies and diverse optoelectronic experiments inside TEM with simultaneous high resolution imaging of nanostructures. Optical TEM holders combining the capability of a scanning tunneling microscopy probe have enabled nanomaterial bending/stretching and electrical measurements in tandem with illumination. Hence, deep insights into the optoelectronic property versus true structure and its dynamics could be established at the nanometer-range precision thus evaluating the suitability of a nanostructure for advanced light driven technologies. This report highlights systems for in situ illumination of TEM samples and recent research work based on the relevant methods, including nanomaterial cathodoluminescence, photoluminescence, photocatalysis, photodeposition, photoconductivity and piezophototronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cultivation of students' engineering designing ability based on optoelectronic system course project

Science.gov (United States)

Cao, Danhua; Wu, Yubin; Li, Jingping

2017-08-01

We carry out teaching based on optoelectronic related course group, aiming at junior students majored in Optoelectronic Information Science and Engineering. " Optoelectronic System Course Project " is product-designing-oriented and lasts for a whole semester. It provides a chance for students to experience the whole process of product designing, and improve their abilities to search literature, proof schemes, design and implement their schemes. In teaching process, each project topic is carefully selected and repeatedly refined to guarantee the projects with the knowledge integrity, engineering meanings and enjoyment. Moreover, we set up a top team with professional and experienced teachers, and build up learning community. Meanwhile, the communication between students and teachers as well as the interaction among students are taken seriously in order to improve their team-work ability and communicational skills. Therefore, students are not only able to have a chance to review the knowledge hierarchy of optics, electronics, and computer sciences, but also are able to improve their engineering mindset and innovation consciousness.

Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

Science.gov (United States)

Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

2013-10-13

Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

Computational and theoretical modeling of pH and flow effects on the early-stage non-equilibrium self-assembly of optoelectronic peptides

Science.gov (United States)

Mansbach, Rachael; Ferguson, Andrew

Self-assembling π-conjugated peptides are attractive candidates for the fabrication of bioelectronic materials possessing optoelectronic properties due to electron delocalization over the conjugated peptide groups. We present a computational and theoretical study of an experimentally-realized optoelectronic peptide that displays triggerable assembly in low pH to resolve the microscopic effects of flow and pH on the non-equilibrium morphology and kinetics of assembly. Using a combination of molecular dynamics simulations and hydrodynamic modeling, we quantify the time and length scales at which convective flows employed in directed assembly compete with microscopic diffusion to influence assembly. We also show that there is a critical pH below which aggregation proceeds irreversibly, and quantify the relationship between pH, charge density, and aggregate size. Our work provides new fundamental understanding of pH and flow of non-equilibrium π-conjugated peptide assembly, and lays the groundwork for the rational manipulation of environmental conditions and peptide chemistry to control assembly and the attendant emergent optoelectronic properties. This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award # DE-SC0011847, and by the Computational Science and Engineering Fellowship from the University of Illinois at Urbana-Champaign.

Nuclear physics and optoelectronics presence in industry, medicine and environment

International Nuclear Information System (INIS)

Robu, Maria; Peteu, Gh.

2000-01-01

This paper reveals applications of Nuclear Physics and Optoelectronics in numerous fields of interest in industry, medicine, environment. In the first part of the work basic elements are analyzed, among which: - the large possibilities offered by the investigation, analysis and testing techniques based on nuclear physics and optoelectronics; - the superior qualitative and quantitative characteristics of these techniques, with varied applicability in fields from industry, medicine and environment. These applications refers to: - elemental analyses of content and impurities; - non-destructive testing with X and gamma radiations; - investigations with radioactive and activable tracers in trophic chains as for instance, ground-vegetation-products-consumers-environment, including also the systemic pollution factors; - complex investigations in the interface tritium-vegetation-environment-humans; - techniques and radiopharmaceutical products for medical investigations; - determinations and automatic control for levels, density, thickness, humidity, surfaces covering; - monitoring by means of remote sensing for the evaluation of the environment, vegetation and pollution factors; - applications and production of laser and UV installations; - connections through optical fibres resistant to radiations; - imaging and medical bioengineering; - advances in X ray, laser and ultrasonic radiology; - monitoring with radiations beams. In the final part, there are presented examples of optoelectronics and nuclear physics applications in fields in industry, medicine and environment, with special stress on their basic characteristics and efficiency. (authors)

Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

KAUST Repository

Botiz, Ioan; Stingelin, Natalie

2014-01-01

It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. © 2014 by the authors.

Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

Directory of Open Access Journals (Sweden)

Ioan Botiz

2014-03-01

Full Text Available It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties.

Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

KAUST Repository

Botiz, Ioan

2014-03-19

It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. © 2014 by the authors.

Optoelectronic properties of doped hydrothermal ZnO thin films

KAUST Repository

Mughal, Asad J.; Carberry, Benjamin; Oh, Sang Ho; Myzaferi, Anisa; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2017-01-01

, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates

Hydrogenated arsenenes as planar magnet and Dirac material

Energy Technology Data Exchange (ETDEWEB)

Zhang, Shengli; Cai, Bo; Zeng, Haibo, E-mail: Huziyu@csrc.ac.cn, E-mail: zeng.haibo@njust.edu.cn [Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Hu, Yonghong [Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); School of Nuclear Technology and Chemistry and Biology, Hubei University of Science and Technology, Xianning 437100 (China); Hu, Ziyu, E-mail: Huziyu@csrc.ac.cn, E-mail: zeng.haibo@njust.edu.cn [Beijing Computational Science Research Center, Beijing 100084 (China)

2015-07-13

Arsenene and antimonene are predicted to have 2.49 and 2.28 eV band gaps, which have aroused intense interest in the two-dimensional (2D) semiconductors for nanoelectronic and optoelectronic devices. Here, the hydrogenated arsenenes are reported to be planar magnet and 2D Dirac materials based on comprehensive first-principles calculations. The semi-hydrogenated (SH) arsenene is found to be a quasi-planar magnet, while the fully hydrogenated (FH) arsenene is a planar Dirac material. The buckling height of pristine arsenene is greatly decreased by the hydrogenation, resulting in a planar and relatively low-mass-density sheet. The electronic structures of arsenene are also evidently altered after hydrogenating from wide-band-gap semiconductor to metallic material for SH arsenene, and then to Dirac material for FH arsenene. The SH arsenene has an obvious magnetism, mainly contributed by the p orbital of the unsaturated As atom. Such magnetic and Dirac materials modified by hydrogenation of arsenene may have potential applications in future optoelectronic and spintronic devices.

Hydrogenated arsenenes as planar magnet and Dirac material

International Nuclear Information System (INIS)

Zhang, Shengli; Cai, Bo; Zeng, Haibo; Hu, Yonghong; Hu, Ziyu

2015-01-01

Arsenene and antimonene are predicted to have 2.49 and 2.28 eV band gaps, which have aroused intense interest in the two-dimensional (2D) semiconductors for nanoelectronic and optoelectronic devices. Here, the hydrogenated arsenenes are reported to be planar magnet and 2D Dirac materials based on comprehensive first-principles calculations. The semi-hydrogenated (SH) arsenene is found to be a quasi-planar magnet, while the fully hydrogenated (FH) arsenene is a planar Dirac material. The buckling height of pristine arsenene is greatly decreased by the hydrogenation, resulting in a planar and relatively low-mass-density sheet. The electronic structures of arsenene are also evidently altered after hydrogenating from wide-band-gap semiconductor to metallic material for SH arsenene, and then to Dirac material for FH arsenene. The SH arsenene has an obvious magnetism, mainly contributed by the p orbital of the unsaturated As atom. Such magnetic and Dirac materials modified by hydrogenation of arsenene may have potential applications in future optoelectronic and spintronic devices

Hydrogenated arsenenes as planar magnet and Dirac material

Science.gov (United States)

Zhang, Shengli; Hu, Yonghong; Hu, Ziyu; Cai, Bo; Zeng, Haibo

2015-07-01

Arsenene and antimonene are predicted to have 2.49 and 2.28 eV band gaps, which have aroused intense interest in the two-dimensional (2D) semiconductors for nanoelectronic and optoelectronic devices. Here, the hydrogenated arsenenes are reported to be planar magnet and 2D Dirac materials based on comprehensive first-principles calculations. The semi-hydrogenated (SH) arsenene is found to be a quasi-planar magnet, while the fully hydrogenated (FH) arsenene is a planar Dirac material. The buckling height of pristine arsenene is greatly decreased by the hydrogenation, resulting in a planar and relatively low-mass-density sheet. The electronic structures of arsenene are also evidently altered after hydrogenating from wide-band-gap semiconductor to metallic material for SH arsenene, and then to Dirac material for FH arsenene. The SH arsenene has an obvious magnetism, mainly contributed by the p orbital of the unsaturated As atom. Such magnetic and Dirac materials modified by hydrogenation of arsenene may have potential applications in future optoelectronic and spintronic devices.

Graduate studies on optoelectronics in Argentina: an experience

Science.gov (United States)

Fernández, Juan C.; Garea, María. T.; Isaurralde, Silvia; Perez, Liliana I.; Raffo, Carlos A.

2014-07-01

The number of graduate programs in Optoelectronics in Argentina is scarce. The current Optics and Photonics Education Directory lists only three programs. One of them was launched in 2001 in the Facultad de Ingeniería (College of Engineering), Universidad de Buenos Aires (UBA). This was the first graduate program in the field, leading to a Master Degree in Optoelectronics. This decision arose from the demand of telecommunications industries and several estate- or private-funded research institutions working with us in the fields of lasers, optics, remote sensing, etc. A great bonus was the steady work, during several decades, of research groups in the College on the development of different type of lasers and optical non destructive tests and their engineering applications. As happened in many engineering graduate programs in Argentina at that time, few non full-time students could finish their studies, which called for 800 hours of traditional lecture-recitation classes, and the Master Thesis. In recent years Argentine Education authorities downsized the Master programs to 700 hours of blended learning and we redesigned the Graduate Optoelectronic Engineering Program to meet the challenge, dividing it in two successive one year programs, the first aimed at a professional training for almost immediate insertion in the labor market (called Especialización en Ingeniería Optoelectrónica), and the second (called Maestría en Ingeniería Optoelectrónica y Fotónica) aimed at a more academic and research target to comply with the UBA standards for Master degrees. The present work is a presentation of the new program design, which has begun in the current year.

In Situ Raman Spectroscopy of COOH-Functionalized SWCNTs Trapped with Optoelectronic Tweezers

Directory of Open Access Journals (Sweden)

Peter J. Pauzauskie

2012-01-01

Full Text Available Optoelectronic tweezers (OETs were used to trap and deposit aqueous dispersions of carboxylic-acid-functionalized single-walled carbon nanotube bundles. Dark-field video microscopy was used to visualize the dynamics of the bundles both with and without virtual electrodes, showing rapid accumulation of carbon nanotubes when optical virtual electrodes are actuated. Raman microscopy was used to probe SWCNT materials following deposition onto metallic fiducial markers as well as during trapping. The local carbon nanotube concentration was observed to increase rapidly during trapping by more than an order of magnitude in less than one second due to localized optical dielectrophoresis forces. This combination of enrichment and spectroscopy with a single laser spot suggests a broad range of applications in physical, chemical, and biological sciences.

Interactive teaching and learning with smart phone app in Optoelectronic Instruments course

Science.gov (United States)

Hu, Yao; Hao, Qun; Zhou, Ya; Huang, Yifan

2017-08-01

Optoelectronic Instruments is a comprehensive professional course for senior students majored in optical engineering and similar specialties. Due to the low lecturer/ student ratio, typically less than 1:100, most of the students gave up the chance of one-to-one communication with the lecturers even when they were confused about the principle or applications of the instruments. A smart phone App Rain Classroom associated with messaging App Wechat is introduced. It enables the lecturers to receive instant feedback from students through bullet screen, push preview and review materials and post in-class quiz. Investigation also shows that 76% of the students enjoyed the new interactive tool, acknowledging its help in understanding the topic better, improving in-class interaction, and after class communications.

25th Anniversary Article: Colloidal Quantum Dot Materials and Devices: A Quarter-Century of Advances

KAUST Repository

Kim, Jin Young

2013-09-01

Colloidal quantum dot (CQD) optoelectronics offers a compelling combination of low-cost, large-area solution processing, and spectral tunability through the quantum size effect. Since early reports of size-tunable light emission from solution-synthesized CQDs over 25 years ago, tremendous progress has been made in synthesis and assembly, optical and electrical properties, materials processing, and optoelectronic applications of these materials. Here some of the major developments in this field are reviewed, touching on key milestones as well as future opportunities. Colloidal quantum dots offer a compelling combination of low-cost and large-area solution processing and spectral tunability via the quantum size effect. These materials are promising in a wide range of optoelectronic applications. The quarter-century-long history of the colloidal quantum dot field is reviewed, beginning with early discoveries in synthesis and physical chemistry, through foundational advances in materials processing, chemistry, and understanding, and concluding with an account of recent breakthroughs that have produced record-setting solar cells. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subsecond annealing of advanced materials annealing by lasers, flash lamps and swift heavy ions

CERN Document Server

Skorupa, Wolfgang

2014-01-01

This book examines thermal processing of elemental semiconductors and materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Covers compound semiconductors, dielectric composites and organic materials.

Studies on the optoelectronic properties of the thermally evaporated tin-doped indium oxide nanostructures

Energy Technology Data Exchange (ETDEWEB)

Pan, Ko-Ying [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Lin, Liang-Da [Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China); Chang, Li-Wei [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Shih, Han C., E-mail: hcshih@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China)

2013-05-15

Indium oxide (In{sub 2}O{sub 3}) nanorods, nanotowers and tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods have been fabricated by thermal evaporation. The morphology, microstructure and chemical composition of these three nanoproducts are characterized by FE-SEM, HRTEM and XPS. To further investigate the optoelectronic properties, the I–V curves and cathodoluminescence (CL) spectra are measured. The electrical resistivity of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods are 1.32 kΩ, 0.65 kΩ and 0.063 kΩ, respectively. CL spectra of these three nanoproducts clearly indicate that tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods cause a blue shift. No doubt ITO nanorods obtain the highest performance among these three nanoproducts, and this also means that Sn-doped In{sub 2}O{sub 3} nanostructures would be the best way to enhance the optoelectronic properties. Additionally, the growing mechanism and the optoelectronic properties of these three nanostructures are discussed. This study is beneficial to the applications of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods in optoelectronic nanodevices.

A full-duplex working integrated optoelectronic device for optical interconnect

Science.gov (United States)

Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

2018-05-01

In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

Optoelectronic pH Meter: Further Details

Science.gov (United States)

Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

2009-01-01

A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

Synthesis, properties and applications of 2D non-graphene materials

International Nuclear Information System (INIS)

Wang, Feng; Wang, Zhenxing; Wang, Qisheng; Wang, Fengmei; Yin, Lei; Xu, Kai; Huang, Yun; He, Jun

2015-01-01

As an emerging class of new materials, two-dimensional (2D) non-graphene materials, including layered and non-layered, and their heterostructures are currently attracting increasing interest due to their promising applications in electronics, optoelectronics and clean energy. In contrast to traditional semiconductors, such as Si, Ge and III–V group materials, 2D materials show significant merits of ultrathin thickness, very high surface-to-volume ratio, and high compatibility with flexible devices. Owing to these unique properties, while scaling down to ultrathin thickness, devices based on these materials as well as artificially synthetic heterostructures exhibit novel and surprising functions and performances. In this review, we aim to provide a summary on the state-of-the-art research activities on 2D non-graphene materials. The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy. Moreover, the review is concluded with some perspectives on the future developments in this field. (topical review)

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science. R AHMED. Articles written in Bulletin of Materials Science. Volume 40 Issue 6 October 2017 pp 1105-1110. Structural, elastic, optoelectronic and magnetic properties of CdHo 2 S 4 spinel: a first-principle study · I HATRAF O MERABIHA T SEDDIK H BALTACHE R KHENATA R ...

Nanostructure of highly aromatic graphene nanosheets -- From optoelectronics to electrochemical energy storage applications

Science.gov (United States)

Biswas, Sanjib

The exceptional electrical properties along with intriguing physical and chemical aspects of graphene nanosheets can only be realized by nanostructuring these materials through the homogeneous and orderly distribution of these nanosheets without compromising the aromaticity of the native basal plane. Graphene nanosheets prepared by direct exfoliation as opposed to the graphene oxide route are necessary in order to preserve the native chemical properties of graphene basal planes. This research has been directed at optimally combining the diverse physical and chemical aspects of graphene nanosheets such as particle size, surface area and edge chemistry to fabricate nanostructured architectures for optoelectronics and high power electrochemical energy storage applications. In the first nanostructuring effort, a monolayer of these ultrathin, highly hydrophobic graphene nanosheets was prepared on a large area substrate via self-assembly at the liquid-liquid interface. Driven by the minimization of interfacial energy these planar graphene nanosheets produce a close packed monolayer structure at the liquid-liquid interface. The resulting monolayer film exhibits high electrical conductivity of more than 1000 S/cm and an optical transmission of more than 70-80% between wavelengths of 550 nm and 2000 nm making it an ideal candidate for optoelectronic applications. In the second part of this research, nanostructuring was used to create a configuration suitable for supercapacitor applications. A free standing, 100% binder free multilayer, flexible film consisting of monolayers of graphene nanosheets was prepared by utilizing the van der Waals forces of attraction between the basal plans of the graphene nanosheets coupled with capillary driven and drying-induced collapse. A major benefit in this approach is that the graphene nanosheet's attractive physical and chemical characteristics can be synthesized into an architecture consisting of large and small nanosheets to create an

GaN nano-membrane for optoelectronic and electronic device applications

KAUST Repository

Ooi, Boon S.

2014-01-01

The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

Semiconductor optoelectronic infrared spectroscopy

International Nuclear Information System (INIS)

Hollingworth, A.R.

2001-08-01

We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

Light box for investigation of characteristics of optoelectronics detectors

Science.gov (United States)

Szreder, Agnieszka; Mazikowski, Adam

2017-09-01

In this paper, a light box for investigation of characteristics of optoelectronic detectors is described. The light box consists of an illumination device, an optical power sensor and a mechanical enclosure. The illumination device is based on four types of high-power light emitting diodes (LED): white light, red, green and blue. The illumination level can be varied for each LED independently by the driver and is measured by optical power sensor. The mechanical enclosure provides stable mounting points for the illumination device, sensor and the examined detector and protects the system from external light, which would otherwise strongly influence the measurement results. Uniformity of illumination distribution provided by the light box for all colors is good, making the measurement results less dependent on the position of the examined detector. The response of optoelectronic detectors can be investigated using the developed light box for each LED separately or for any combination of up to four LED types. As the red, green and blue LEDs are rather narrow bandwidth sources, spectral response of different detectors can be examined for these wavelength ranges. The described light box can be used for different applications. Its primary use is in a student laboratory setup for investigation of characteristics of optoelectronic detectors. Moreover, it can also be used in various colorimetric or photographic applications. Finally, it will be used as a part of demonstrations from the fields of vision and color, performed during science fairs and outreach activities increasing awareness of optics and photonics.

InP/ZnS-graphene oxide and reduced graphene oxide nanocomposites as fascinating materials for potential optoelectronic applications

Science.gov (United States)

Samal, Monica; Mohapatra, Priyaranjan; Subbiah, Ramesh; Lee, Chang-Lyoul; Anass, Benayad; Kim, Jang Ah; Kim, Taesung; Yi, Dong Kee

2013-09-01

Our recent studies on metal-organic nanohybrids based on alkylated graphene oxide (GO), reduced alkylated graphene oxide (RGO) and InP/ZnS core/shell quantum dots (QDs) are presented. The GO alkylated by octadecylamine (ODA) and the QD bearing a dodecane thiol (DDT) ligand are soluble in toluene. The nanocomposite alkylated-GO-QD (GOQD) is readily formed from the solution mixture. Treatment of the GOQD composite with hydrazine affords a reduced-alkylated-GO-QD (RGOQD) composite. The structure, morphology, photophysical and electrical properties of GOQDs and RGOQDs are studied. The micro-FTIR and Raman studies demonstrate evidence of the QD interaction with GO and RGO through facile intercalation of the alkyl chains. The field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM) images of the GOQD composite show heaps of large QD aggregates piled underneath the GO sheet. Upon reduction to RGOQDs, the QDs become evenly distributed on the graphene bed and the size of the clusters significantly decreases. This also facilitates closer proximity of the QDs to the graphene domains by altering the optoelectronic properties of the RGOQDs. The X-ray photoelectron spectroscopy (XPS) results confirm QDs being retained in the composites, though a small elemental composition change takes place. The XPS and the fluorescence spectra show the presence of an In(Zn)P alloy while the X-ray diffraction (XRD) results show characteristics of the tetragonal indium. The photoluminescence (PL) quenching of QDs in GOQD and RGOQD films determined by the time correlated single photon counting (TCSPC) experiment demonstrates almost complete fluorescence quenching in RGOQDs. The conductance studies demonstrate the differences between GOQDs and RGOQDs. Investigation on the metal-oxide-semiconductor field-effect transistor (nMOSFET) characteristics shows the composite to exhibit p-type channel material properties. The RGOQD exhibits much

Divergent synthesis and optoelectronic properties of oligodiacetylene building blocks

NARCIS (Netherlands)

Pilzak, G.S.; Lagen, van B.; Sudhölter, E.J.R.; Zuilhof, H.

2008-01-01

A new and divergent synthetic route to oligodiacetylene (ODA) building blocks has been developed via Sonogashira reactions under a reductive atmosphere. These central building blocks provide a new way for rapid preparation of long ODAs. In addition, we report on their optoelectronic properties which

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

Science.gov (United States)

Georgiades, Nikos P.; Polzik, Eugene S.; Kimble, H. Jeff

1999-02-02

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.

Piezophototronic Effect in Single-Atomic-Layer MoS ₂ for Strain-Gated Flexible Optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Wu, Wenzhuo [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Wang, Lei [Department of Electrical Engineering, Columbia University, New York NY 10027 USA; Yu, Ruomeng [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Liu, Yuanyue [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Wei, Su-Huai [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Hone, James [Department of Mechanical Engineering, Columbia University, New York NY 10027 USA; Wang, Zhong Lin [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083 Beijing China

2016-08-03

Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

Design of optoelectronic system to meter of electrical current to the habitation house

International Nuclear Information System (INIS)

Camas, J.; Flores, M.; Anzuelo, G.; Garcia, C.; Juarez, N.; Torres, W.; Mota, R.

2009-01-01

In this work, we present an optoelectronic digital meter of electrical current. The development of this design is described step by step with diagram to blocks. The advantage over conventional meters of CFE (Comision Federal de electricidad) and the design proposed are analyzed. Information in the optoelectronic design is controlled by Microcontroller PIC16F877. This Microcontroller uses an external crystal as an oscillator with a 4 MHz frequency. The information is shown in a LCD (Liquid Crystal Display). In addition, to quantify the electrical current was necessary an interruption of light. (Author)

Photo-induced changes in nano-copper oxide for optoelectronic applications

Science.gov (United States)

Hendi, A. A.; Rashad, M.

2018-06-01

Copper oxide (CuO) nanoparticles (NPs) have been prepared using microwave irradiation. A mother material was copper nitrate in distilled water. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used for characterizing the NPs powders. Thermal Gravimetric Analysis (TGA) and Differential Thermal Analysis (DTA) were measured for as-prepared CuO NPs. The obtained oxides NPs were confirmed produced during chemical precipitation by these characterizions. These NPs were dropped on top of glass substrate for measuring the optical characterizions. Both linear and nonlinear optical properties of the as-prepared CuO NP films were studied. The optical energy gap of the as-prepared CuO NP films is equal to 3.98 eV, which is higher than that of the bulk material. The effect of ultraviolet (UV) light irradiation on the CuO NP films was investigated at 2 and 5 h for study the photo-induced effect. The optical properties of CuO NP films were measured as a function of these UV irradiation time. The optical constants for as-prepared and irradiated CuO NP films were calculated which reflect the affect of UV irradiation time. As observed from these optical results, a highly forced for optoelectronic applications.

Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique.

Science.gov (United States)

Lopez-Diaz, D; Merino, C; Velázquez, M M

2015-11-11

Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP) and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.

Compensating Unknown Time-Varying Delay in Opto-Electronic Platform Tracking Servo System

Directory of Open Access Journals (Sweden)

Ruihong Xie

2017-05-01

Full Text Available This paper investigates the problem of compensating miss-distance delay in opto-electronic platform tracking servo system. According to the characteristic of LOS (light-of-sight motion, we setup the Markovian process model and compensate this unknown time-varying delay by feed-forward forecasting controller based on robust H∞ control. Finally, simulation based on double closed-loop PI (Proportion Integration control system indicates that the proposed method is effective for compensating unknown time-varying delay. Tracking experiments on the opto-electronic platform indicate that RMS (root-mean-square error is 1.253 mrad when tracking 10° 0.2 Hz signal.

Cavity nonlinear optics with layered materials

Directory of Open Access Journals (Sweden)

Fryett Taylor

2017-12-01

Full Text Available Unprecedented material compatibility and ease of integration, in addition to the unique and diverse optoelectronic properties of layered materials, have generated significant interest in their utilization in nanophotonic devices. While initial nanophotonic experiments with layered materials primarily focused on light sources, modulators, and detectors, recent efforts have included nonlinear optical devices. In this paper, we review the current state of cavity-enhanced nonlinear optics with layered materials. Along with conventional nonlinear optics related to harmonic generation, we report on emerging directions of nonlinear optics, where layered materials can potentially play a significant role.

UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study

KAUST Repository

Ziani, Ahmed

2015-09-03

We report a combined experimental and theoretical study on the optoelectronic properties of α-SnWO4 for UV-Vis excitation. The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the HSE06 functional. The α-SnWO4 material shows an indirect bandgap of 1.52 eV with high absorption coefficient in the visible-light range (>2 × 105 cm−1). The results show relatively high dielectric constant (>30) and weak diffusion properties (large effective masses) of excited carriers.

Estimation of Dynamic Errors in Laser Optoelectronic Dimension Gauges for Geometric Measurement of Details

Directory of Open Access Journals (Sweden)

Khasanov Zimfir

2018-01-01

Full Text Available The article reviews the capabilities and particularities of the approach to the improvement of metrological characteristics of fiber-optic pressure sensors (FOPS based on estimation estimation of dynamic errors in laser optoelectronic dimension gauges for geometric measurement of details. It is shown that the proposed criteria render new methods for conjugation of optoelectronic converters in the dimension gauge for geometric measurements in order to reduce the speed and volume requirements for the Random Access Memory (RAM of the video controller which process the signal. It is found that the lower relative error, the higher the interrogetion speed of the CCD array. It is shown that thus, the maximum achievable dynamic accuracy characteristics of the optoelectronic gauge are determined by the following conditions: the parameter stability of the electronic circuits in the CCD array and the microprocessor calculator; linearity of characteristics; error dynamics and noise in all electronic circuits of the CCD array and microprocessor calculator.

Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique

Directory of Open Access Journals (Sweden)

D. Lopez-Diaz

2015-11-01

Full Text Available Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

Science.gov (United States)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the

Improving the security of optoelectronic delayed feedback system by parameter modulation and system coupling

Science.gov (United States)

Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

2016-02-01

A coupled system with varying parameters is proposed to improve the security of optoelectronic delayed feedback system. This system is coupled by two parameter-varied optoelectronic delayed feedback systems with chaotic modulation. Dynamics performance results show that this system has a higher complexity compared to the original one. Furthermore, this system can conceal the time delay effectively against the autocorrelation function and delayed mutual information method and can increase the dimension space of secure parameters to resist brute-force attack by introducing the digital chaotic systems.

Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

Science.gov (United States)

Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

2015-05-01

The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

Tailoring uniform gold nanoparticle arrays and nanoporous films for next-generation optoelectronic devices

Science.gov (United States)

Farid, Sidra; Kuljic, Rade; Poduri, Shripriya; Dutta, Mitra; Darling, Seth B.

2018-06-01

High-density arrays of gold nanodots and nanoholes on indium tin oxide (ITO)-coated glass surfaces are fabricated using a nanoporous template fabricated by the self-assembly of diblock copolymers of poly (styrene-block-methyl methacrylate) (PS-b-PMMA) structures. By balancing the interfacial interactions between the polymer blocks and the substrate using random copolymer, cylindrical block copolymer microdomains oriented perpendicular to the plane of the substrate have been obtained. Nanoporous PS films are created by selectively etching PMMA cylinders, a straightforward route to form highly ordered nanoscale porous films. Deposition of gold on the template followed by lift off and sonication leaves a highly dense array of gold nanodots. These materials can serve as templates for the vapor-liquid-solid (VLS) growth of semiconductor nanorod arrays for next generation hybrid optoelectronic applications.

Development of an optoelectronic holographic platform for otolaryngology applications

Science.gov (United States)

Harrington, Ellery; Dobrev, Ivo; Bapat, Nikhil; Flores, Jorge Mauricio; Furlong, Cosme; Rosowski, John; Cheng, Jeffery Tao; Scarpino, Chris; Ravicz, Michael

2010-08-01

In this paper, we present advances on our development of an optoelectronic holographic computing platform with the ability to quantitatively measure full-field-of-view nanometer-scale movements of the tympanic membrane (TM). These measurements can facilitate otologists' ability to study and diagnose hearing disorders in humans. The holographic platform consists of a laser delivery system and an otoscope. The control software, called LaserView, is written in Visual C++ and handles communication and synchronization between hardware components. It provides a user-friendly interface to allow viewing of holographic images with several tools to automate holography-related tasks and facilitate hardware communication. The software uses a series of concurrent threads to acquire images, control the hardware, and display quantitative holographic data at video rates and in two modes of operation: optoelectronic holography and lensless digital holography. The holographic platform has been used to perform experiments on several live and post-mortem specimens, and is to be deployed in a medical research environment with future developments leading to its eventual clinical use.

Microfluidic optoelectronic sensor for salivary diagnostics of stomach cancer.

Science.gov (United States)

Zilberman, Yael; Sonkusale, Sameer R

2015-05-15

We present a microfluidic optoelectronic sensor for saliva diagnostics with a potential application for non-invasive early diagnosis of stomach cancer. Stomach cancer is the second most common cause of cancer-related deaths in the world. The primary identified cause is infection by a gram-negative bacterium Helicobacter pylori. These bacteria secrete the enzyme urease that converts urea into carbon dioxide (CO2) and ammonia (NH3), leading to their elevated levels in breath and body fluids. The proposed optoelectronic sensor will detect clinically relevant levels of CO2 and NH3 in saliva that can potentially be used for early diagnosis of stomach cancer. The sensor is composed of the embedded in a microfluidic device array of microwells filled with ion-exchange polymer microbeads doped with various organic dyes. The optical response of this unique highly diverse sensor is monitored over a broad spectrum, which provides a platform for cross-reactive sensitivity and allows detection of CO2 and NH3 in saliva at ppm levels. Copyright © 2014 Elsevier B.V. All rights reserved.

Purely Organic Thermally Activated Delayed Fluorescence Materials for Organic Light-Emitting Diodes.

Science.gov (United States)

Wong, Michael Y; Zysman-Colman, Eli

2017-06-01

The design of thermally activated delayed fluorescence (TADF) materials both as emitters and as hosts is an exploding area of research. The replacement of phosphorescent metal complexes with inexpensive organic compounds in electroluminescent (EL) devices that demonstrate comparable performance metrics is paradigm shifting, as these new materials offer the possibility of developing low-cost lighting and displays. Here, a comprehensive review of TADF materials is presented, with a focus on linking their optoelectronic behavior with the performance of the organic light-emitting diode (OLED) and related EL devices. TADF emitters are cross-compared within specific color ranges, with a focus on blue, green-yellow, orange-red, and white OLEDs. Organic small-molecule, dendrimer, polymer, and exciplex emitters are all discussed within this review, as is their use as host materials. Correlations are provided between the structure of the TADF materials and their optoelectronic properties. The success of TADF materials has ushered in the next generation of OLEDs. © 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Molecule@MOF: A New Class of Opto-electronic Materials.

Energy Technology Data Exchange (ETDEWEB)

Talin, Albert Alec [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Jones, Reese E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Spataru, Dan Catalin [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Leonard, Francois Leonard [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); He, Yuping [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Foster, Michael E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Allendorf, Mark D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Stavila, Vitalie [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hopkins, Patrick E. [Univ. of Virginia, Charlottesville, VA (United States)

2017-09-01

Metal organic frameworks (MOFs) are extended, nanoporous crystalline compounds consisting of metal ions interconnected by organic ligands. Their synthetic versatility suggest a disruptive class of opto - electronic materials with a high degree of electrical tunability and without the property - degrading disorder of organic conductors. In this project we determined the factors controlling charge and energy transport in MOFs and evaluated their potential for thermoelectric energy conversion. Two strategies for a chieving electronic conductivity in MOFs were explored: 1) using redox active 'guest' molecules introduced into the pores to dope the framework via charge - transfer coupling (Guest@MOF), 2) metal organic graphene analogs (MOGs) with dispersive band structur es arising from strong electronic overlap between the MOG metal ions and its coordinating linker groups. Inkjet deposition methods were developed to facilitate integration of the guest@MOF and MOG materials into practical devices.

Demonstration of an optoelectronic interconnect architecture for a parallel modified signed-digit adder and subtracter

Science.gov (United States)

Sun, Degui; Wang, Na-Xin; He, Li-Ming; Weng, Zhao-Heng; Wang, Daheng; Chen, Ray T.

1996-06-01

A space-position-logic-encoding scheme is proposed and demonstrated. This encoding scheme not only makes the best use of the convenience of binary logic operation, but is also suitable for the trinary property of modified signed- digit (MSD) numbers. Based on the space-position-logic-encoding scheme, a fully parallel modified signed-digit adder and subtractor is built using optoelectronic switch technologies in conjunction with fiber-multistage 3D optoelectronic interconnects. Thus an effective combination of a parallel algorithm and a parallel architecture is implemented. In addition, the performance of the optoelectronic switches used in this system is experimentally studied and verified. Both the 3-bit experimental model and the experimental results of a parallel addition and a parallel subtraction are provided and discussed. Finally, the speed ratio between the MSD adder and binary adders is discussed and the advantage of the MSD in operating speed is demonstrated.

Sol-gel synthesized ZnO for optoelectronics applications: a characterization review

Science.gov (United States)

Harun, Kausar; Hussain, Fayaz; Purwanto, Agus; Sahraoui, Bouchta; Zawadzka, Anna; Azmin Mohamad, Ahmad

2017-12-01

The rapid growth in green technology has resulted in a marked increase in the incorporation of ZnO in energy and optoelectronic devices. Research involving ZnO is being given renewed attention in the quest to fully exploit its promising properties. The purity and state of defects in the ZnO system are optimized through several modifications to the synthesis conditions and the starting materials. These works have been verified through a series of characterizations. This review covers the essential characterization outcomes of pure ZnO nanoparticles. Emphasis is placed on recent techniques, examples and some issues concerning sol-gel synthesized ZnO nanoparticles. Thermal, phase, structural and morphological observations are combined to ascertain the level of purity of ZnO. The subsequent elemental and optical characterizations are also discussed. This review would be the collective information and suggestions at one place for investigators to focus on the best development of ZnO-based optical and energy devices.

Chemical vapor deposition growth of single-crystalline cesium lead halide microplatelets and heterostructures for optoelectronic applications

Institute of Scientific and Technical Information of China (English)

Yiliu Wang; Xun Guan; Dehui Li; Hung-Chieh Cheng; Xidong Duan; Zhaoyang Lin; Xiangfeng Duan

2017-01-01

Orgaruc-inorganic hybrid halide perovskites,such as CH3NH3PbI3,have emerged as an exciting class of materials for solar photovoltaic applications;however,they are currently plagued by insufficient environmental stability.To solve this issue,all-inorganic halide perovskites have been developed and shown to exhibit significantly improved stability.Here,we report a single-step chemical vapor deposition growth of cesium lead halide (CsPbX3) microcrystals.Optical microscopy studies show that the resulting perovskite crystals predominantly adopt a square-platelet morphology.Powder X-ray diffraction (PXRD) studies of the resulting crystals demonstrate a highly crystalline nature,with CsPbC13,CsPbBr3,and CsPbI3 showing tetragonal,monoclinic,and orthorhombic phases,respectively.Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies show that the resulting platelets exhibit well-faceted structures with lateral dimensions of the order of 10-50 μm,thickness around 1 μm,and ultra-smooth surface,suggesting the absence of obvious grain boundaries and the single-crystalline nature of the individual microplatelets.Photoluminescence (PL) images and spectroscopic studies show a uniform and intense emission consistent with the expected band edge transition.Additionally,PL images show brighter emission around the edge of the platelets,demonstrating a wave-guiding effect in high-quality crystals.With a well-defined geometry and ultra-smooth surface,the square platelet structure can function as a whispering gallery mode cavity with a quality factor up to 2,863 to support laser emission at room temperature.Finally,we demonstrate that such microplatelets can be readily grown on a variety of substrates,including silicon,graphene,and other two-dimensional materials such as molybdenum disulfide,which can readily allow the construction of heterostructure optoelectronic devices,including a graphene/perovskite/ graphene vertically-stacked photodetector with

Two-dimensional gold nanoparticle arrays. A platform for molecular optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Mangold, Markus Andreas

2011-11-15

In my research, I study the optoelectronic properties of two-dimensional, hexagonal gold nanoparticle arrays formed by self-assembly. When the nanoparticle arrays are embedded in a matrix of alkane thiols, the photoresponse is dominated by a bolometric conductance increase. At room temperature, I observe a strong enhancement of the bolometric photoconductance when the surface plasmon resonance of the nanoparticles is excited. At cryogenic temperatures, the bolometric conductance enhancement leads to a redistribution of the potential landscape which dominates the optoelectronic response of the nanoparticle arrays. When optically active oligo(phenylene vinylene) (OPV) molecules are covalently bound to the nanoparticles, an increased photoconductance due to the resonant excitation of the OPV is observed. The results suggest that the charge carriers, which are resonantly excited in the OPV molecules, directly contribute to the current flow through the nanoparticle arrays. Thus, the conductance of OPV in its excited state is measured in the presented experiments. (orig.)

Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

International Nuclear Information System (INIS)

Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

1999-01-01

Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

International Nuclear Information System (INIS)

Ueda, Kazushige; Hiramatsu, Hidenori; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2006-01-01

Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials

Problems of systems dataware using optoelectronic measuring means of linear displacement

Science.gov (United States)

Bazykin, S. N.; Bazykina, N. A.; Samohina, K. S.

2017-10-01

Problems of the dataware of the systems with the use of optoelectronic means of the linear displacement are considered in the article. The classification of the known physical effects, realized by the means of information-measuring systems, is given. The organized analysis of information flows in technical systems from the standpoint of determination of inaccuracies of measurement and management was conducted. In spite of achieved successes in automation of machine-building and instruments-building equipment in the field of dataware of the technical systems, there are unresolved problems, concerning the qualitative aspect of the production process. It was shown that the given problem can be solved using optoelectronic lazer information-measuring systems. Such information-measuring systems are capable of not only executing the measuring functions, but also solving the problems of management and control during processing, thereby guaranteeing the quality of final products.

Prospects of III-nitride optoelectronics grown on Si

International Nuclear Information System (INIS)

Zhu, D; Wallis, D J; Humphreys, C J

2013-01-01

The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al 2 O 3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures. (review article)

Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices †

KAUST Repository

Beljonne, David

2011-02-08

We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational techniques used to assess the morphology of organic: organic heterojunctions; we highlight the compromises that are necessary to handle large systems and multiple time scales while preserving the atomistic details required for subsequent computations of the electronic and optical properties. We then review some recent theoretical advances in describing the ground-state electronic structure at heterojunctions between donor and acceptor materials and highlight the role played by charge-transfer and long-range polarization effects. Finally, we discuss the modeling of the excited-state electronic structure at organic:organic interfaces, which is a key aspect in the understanding of the dynamics of photoinduced electron-transfer processes. © 2010 American Chemical Society.

Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

KAUST Repository

Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

2016-01-01

An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc

FY 1992 Report on the results of the research and development project for the industrial base technologies of the next generation. Research and development of nonlinear optoelectronic materials; 1992 nendo hisenkei hikari denshi zairyo no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1993-03-01

Described herein are the FY 1992 results of the research and development project for the optoelectronic materials. The FY 1992 is the last year for the phase-I project of the basic plan, and the results are evaluated mainly viewed from extent of attainment of the interim targets. For the organic materials, the highly unique chiral nonlinear compounds are further developed, and direction for the investigations of the conjugated low-molecular-weight compounds is established. The excellent high-molecular-weight films are developed. For the dispersed materials, those developed include CuCl-dispersed glass, CdTe laminated glass developed by the laser evaporation method, glass dispersed with semiconductors at high concentrations, and dispersed materials with high-molecular-weight materials as the matrices. For the material development, those technologies investigated are orientation controlling of the crystals for thin organic films, and development of superlattices. A total of 9 research themes are recommissioned to 9 enterprises. They include organic, low-molecular-weight materials, growth of orientation-controlled crystals, films of high-molecular-weight organic conjugated compounds, glass-dispersed materials (prepared by the vapor-phase, impregnation of porous glass, sol-gel, superlow-melting glass and super-cooling methods), organic dispersed materials, development of the organic superlattices, and development of the three-dimensional superstructures. (NEDO)

FY 1990 Report on the results of the research and development project for the industrial base technologies of the next generation. Research and development of nonlinear optoelectronic materials; 1990 nendo hisenkei hikari denshi zairyo no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1991-03-01

Described herein are the FY 1990 results of the research and development project for the optoelectronic materials, implemented to cope with the highly information-oriented societies. The FY 1990 is the second year for the phase-I project of the basic plan, and the R and D efforts are directed to elucidation of the mechanisms involved in the nonlinear phenomena, exploration and designs of various materials, and investigations of the technologies for, e.g., the material synthesis and evaluation. The themes to be investigated by the long-term project include exploration and preparation of the superfine particles and base materials for the organic materials; and crystal growth, dispersion of the fine particles and development of the superlattices for development of the materials. The comprehensive investigation and research program investigates the trends of the related technologies, both domestic and foreign. A total of 9 research themes are recommissioned to 9 enterprises. They include organic, low-molecular-weight materials, growth of orientation-controlled crystals, films of high-molecular-weight organic conjugated compounds, glass-dispersed materials (prepared by the vapor-phase, impregnation of porous glass, sol-gel, superlow-melting glass and super-cooling methods), organic dispersed materials, development of the organic superlattices, and development of the three-dimensional superstructures. (NEDO)

Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

KAUST Repository

Catrysse, Peter B.; Fan, Shanhui

2010-01-01

We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from

Designing a porous-crystalline structure of β-Ga2O3: a potential approach to tune its opto-electronic properties.

Science.gov (United States)

Banerjee, Swastika; Jiang, Xiangwei; Wang, Lin-Wang

2018-04-04

β-Ga2O3 has drawn recent attention as a state-of-the-art electronic material due to its stability, optical transparency and appealing performance in power devices. However, it has also found a wider range of opto-electronic applications including photocatalysis, especially in its porous form. For such applications, a lower band gap must be obtained and an electron-hole spatial separation would be beneficial. Like many other metal oxides (e.g. Al2O3), Ga2O3 can also form various types of porous structure. In the present study, we investigate how its optical and electronic properties can be changed in a particular porous structure with stoichiometrically balanced and extended vacancy channels. We apply a set of first principles computational methods to investigate the formation and the structural, dynamic, and opto-electronic properties. We find that such an extended vacancy channel is mechanically stable and has relatively low formation energy. We also find that this results in a spatial separation of the electron and hole, forming a long-lived charge transfer state that has desirable characteristics for a photocatalyst. In addition, the electronic band gap reduces to the vis-region unlike the transparency in the pure β-Ga2O3 crystal. Thus, our systematic study is promising for the application of such a porous structure of β-Ga2O3 as a versatile electronic material.

Measuring processes with opto-electronic semiconductor components

International Nuclear Information System (INIS)

1985-01-01

This is a report on the state of commercially available semiconductor emitters and detectors for the visible, near, middle and remote infrared range. A survey is given on the distance, speed, flow and length measuring techniques using opto-electronic components. Automatic focussing, the use of light barriers, non-contact temperature measurements, spectroscopic gas, liquid and environmental measurement techniques and gas analysis in medical techniques show further applications of the new components. The modern concept of guided radiation in optical fibres and their use in system technology is briefly explained. (DG) [de

Smart Optoelectronic Sensors and Intelligent Sensor Systems

Directory of Open Access Journals (Sweden)

Sergey Y. YURISH

2012-03-01

Full Text Available Light-to-frequency converters are widely used in various optoelectronic sensor systems. However, a further frequency-to-digital conversion is a bottleneck in such systems due to a broad frequency range of light-to-frequency converters’ outputs. This paper describes an effective OEM design approach, which can be used for smart and intelligent sensor systems design. The design is based on novel, multifunctional integrated circuit of Universal Sensors & Transducers Interface especially designed for such sensor applications. Experimental results have confirmed an efficiency of this approach and high metrological performances.

Doping of III-nitride materials

OpenAIRE

Pampili, Pietro; Parbrook, Peter J.

2016-01-01

In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as ex...

Nanocellulose-based Translucent Diffuser for Optoelectronic Device Applications with Dramatic Improvement of Light Coupling.

Science.gov (United States)

Wu, Wei; Tassi, Nancy G; Zhu, Hongli; Fang, Zhiqiang; Hu, Liangbing

2015-12-09

Nanocellulose is a biogenerated and biorenewable organic material. Using a process based on 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO)/NaClO/NaBr system, a highly translucent and light-diffusive film consisting of many layers of nanocellulose fibers and wood pulp microfibers was made. The film demonstrates a combination of large optical transmittance of ∼90% and tunable diffuse transmission of up to ∼78% across the visible and near-infrared spectra. The detailed characterizations of the film indicate the combination of high optical transmittance and haze is due to the film's large packing density and microstructured surface. The superior optical properties make the film a translucent light diffuser and applicable for improving the efficiencies of optoelectronic devices such as thin-film silicon solar cells and organic light-emitting devices.

New nanocomposite surfaces and thermal interface materials based on mesoscopic microspheres, polymers and graphene flakes

Science.gov (United States)

Dmitriev, Alex A.; Dmitriev, Alex S.; Makarov, Petr; Mikhailova, Inna

2018-04-01

In recent years, there has been a great interest in the development and creation of new functional energy mate-rials, including for improving the energy efficiency of power equipment and for effectively removing heat from energy devices, microelectronics and optoelectronics (power micro electronics, supercapacitors, cooling of processors, servers and data centers). In this paper, the technology of obtaining new nanocomposites based on mesoscopic microspheres, polymers and graphene flakes is considered. The methods of sequential production of functional materials from graphene flakes of different volumetric concentration using epoxy polymers, as well as the addition of monodisperse microspheres are described. Data are given on the measurement of the contact angle and thermal conductivity of these nanocomposites with respect to the creation of thermal interface materials for cooling devices of electronics, optoelectronics and power engineering.

Universal description of channel plasmons in two-dimensional materials

DEFF Research Database (Denmark)

Gonçalves, P. A. D.; Bozhevolnyi, Sergey I.; Mortensen, N. Asger

2017-01-01

Channeling surface plasmon-polaritons to control their propagation direction is of the utmost importance for future optoelectronic devices. Here, we develop an effective-index method to describe and characterize the properties of 2D material's channel plasmon-polaritons (CPPs) guided along a V-sh...

Design of a dual-axis optoelectronic level for precision angle measurements

International Nuclear Information System (INIS)

Fan, Kuang-Chao; Wang, Tsung-Han; Lin, Sheng-Yi; Liu, Yen-Chih

2011-01-01

The accuracy of machine tools is mainly determined by angular errors during linear motion according to the well-known Abbe principle. Precision angle measurement is important to precision machines. This paper presents the theory and experiments of a new dual-axis optoelectronic level with low cost and high precision. The system adopts a commercial DVD pickup head as the angle sensor in association with the double-layer pendulum mechanism for two-axis swings, respectively. In data processing with a microprocessor, the measured angles of both axes can be displayed on an LCD or exported to an external PC. Calibrated by a triple-beam laser angular interferometer, the error of the dual-axis optoelectronic level is better than ±0.7 arcsec in the measuring range of ±30 arcsec, and the settling time is within 0.5 s. Experiments show the applicability to the inspection of precision machines

Research and development of photovoltaic power system. Study of carrier dynamics in a-Si from optical and optoelectronic properties; Taiyoko hatsuden system no kenky kaihatsu. Amorphous silicon no koden tokusei to sono carrier dynamics no kogakuteki kenkyu

Energy Technology Data Exchange (ETDEWEB)

Hamakawa, K [Osaka University, Osaka (Japan). Faculty of Engineering Science

1994-12-01

This paper reports the result obtained during fiscal 1994 on research on an optical study of optoelectronic properties of amorphous silicon and its carrier dynamics. Studies have been performed on elucidation of the optoelectronic conversion mechanism in an a-Si film p-i-n junction system and the relationship of the mechanism with the optoelectronic properties. In the studies, optically induced defect level distribution was evaluated by using the modulated optical current spectroscopy, and confirmation was made on model forecast and qualitative agreement, such as large increase in neutral defect levels in association with beam irradiation. In research on elucidation of a film forming mechanism for a-Si based alloys, and material property control, a high-sensitivity reflective infrared spectroscopy was used to observe mechanisms such as treatments and processes given in device fabrication. In research on optical and optoelectronic properties of an s-Si alloy thin film by using the modulated spectroscopy, a new evaluation technology dealing with amorphous semiconductors was developed. The technology separately evaluates carrier migration factors of electrons and holes by combining polarization angle dependence of electro-absorption signals with hole migration measurements. 4 figs.

Reconfigurable Integrated Optoelectronics

Directory of Open Access Journals (Sweden)

Richard Soref

2011-01-01

Full Text Available Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs and photonic integrated circuits (PICs manufactured in a high-volume foundry. We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics. This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the electro-optical building blocks. We illustrate these modules in detail and discuss 3D ROEIC chips for the highest-performance signal processing. We present examples of our module theory for RPIC optical lattice filters already constructed, and we propose new ROEICs for directed optical logic, large-scale matrix switching, and 2D beamsteering of a phased-array microwave antenna. In general, large-scale-integrated ROEICs will enable significant applications in computing, quantum computing, communications, learning, imaging, telepresence, sensing, RF/microwave photonics, information storage, cryptography, and data mining.

Optoelectronic properties of XIn2S4 (X = Cd, Mg) thiospinels through highly accurate all-electron FP-LAPW method coupled with modified approximations

International Nuclear Information System (INIS)

Yousaf, Masood; Dalhatu, S.A.; Murtaza, G.; Khenata, R.; Sajjad, M.; Musa, A.; Rahnamaye Aliabad, H.A.; Saeed, M.A.

2015-01-01

Highlights: • Highly accurate all-electron FP-LAPW+lo method is used. • New physical parameters are reported, important for the fabrication of optoelectronic devices. • A comparative study that involves FP-LAPW+lo method and modified approximations. • Computed band gap values have good agreement with the experimental values. • Optoelectronic results of fundamental importance can be utilized for the fabrication of devices. - Abstract: We report the structural, electronic and optical properties of the thiospinels XIn 2 S 4 (X = Cd, Mg), using highly accurate all-electron full potential linearized augmented plane wave plus local orbital method. In order to calculate the exchange and correlation energies, the method is coupled with modified techniques such as GGA+U and mBJ-GGA, which yield improved results as compared to the previous studies. GGA+SOC approximation is also used for the first time on these compounds to examine the spin orbit coupling effect on the band structure. From the analysis of the structural parameters, robust character is predicted for both materials. Energy band structures profiles are fairly the same for GGA, GGA+SOC, GGA+U and mBJ-GGA, confirming the indirect and direct band gap nature of CdIn 2 S 4 and MgIn 2 S 4 materials, respectively. We report the trend of band gap results as: (mBJ-GGA) > (GGA+U) > (GGA) > (GGA+SOC). Localized regions appearing in the valence bands for CdIn 2 S 4 tend to split up nearly by ≈1 eV in the case of GGA+SOC. Many new physical parameters are reported that can be important for the fabrication of optoelectronic devices. Optical spectra namely, dielectric function (DF), refractive index n(ω), extinction coefficient k(ω), reflectivity R(ω), optical conductivity σ(ω), absorption coefficient α(ω) and electron loss function are discussed. Optical’s absorption edge is noted to be 1.401 and 1.782 for CdIn 2 S 4 and MgIn 2 S 4 , respectively. The prominent peaks in the electron energy spectrum

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

Science.gov (United States)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Optoelectronic polarimeter controlled by a graphical user interface of Matlab

International Nuclear Information System (INIS)

Vilardy, J M; Torres, R; Jimenez, C J

2017-01-01

We show the design and implementation of an optical polarimeter using electronic control. The polarimeter has a software with a graphical user interface (GUI) that controls the optoelectronic setup and captures the optical intensity measurement, and finally, this software evaluates the Stokes vector of a state of polarization (SOP) by means of the synchronous detection of optical waves. The proposed optoelectronic polarimeter can determine the Stokes vector of a SOP in a rapid and efficient way. Using the polarimeter proposed in this paper, the students will be able to observe (in an optical bench) and understand the different interactions of the SOP when the optical waves pass through to the linear polarizers and retarder waves plates. The polarimeter prototype could be used as a main tool for the students in order to learn the theory and experimental aspects of the SOP for optical waves via the Stokes vector measurement. The proposed polarimeter controlled by a GUI of Matlab is more attractive and suitable to teach and to learn the polarization of optical waves. (paper)

Study and practice of flipped classroom in optoelectronic technology curriculum

Science.gov (United States)

Shi, Jianhua; Lei, Bing; Liu, Wei; Yao, Tianfu; Jiang, Wenjie

2017-08-01

"Flipped Classroom" is one of the most popular teaching models, and has been applied in more and more curriculums. It is totally different from the traditional teaching model. In the "Flipped Classroom" model, the students should watch the teaching video afterschool, and in the classroom only the discussion is proceeded to improve the students' comprehension. In this presentation, "Flipped Classroom" was studied and practiced in opto-electronic technology curriculum; its effect was analyzed by comparing it with the traditional teaching model. Based on extensive and deep investigation, the phylogeny, the characters and the important processes of "Flipped Classroom" are studied. The differences between the "Flipped Classroom" and the traditional teaching model are demonstrated. Then "Flipped Classroom" was practiced in opto-electronic technology curriculum. In order to obtain high effectiveness, a lot of teaching resources were prepared, such as the high-quality teaching video, the animations and the virtual experiments, the questions that the students should finish before and discussed in the class, etc. At last, the teaching effect was evaluated through analyzing the result of the examination and the students' surveys.

Filterless low-phase-noise frequency-quadrupled microwave generation based on a multimode optoelectronic oscillator

Science.gov (United States)

Teng, Yichao; Zhang, Pin; Zhang, Baofu; Chen, Yiwang

2018-02-01

A scheme to realize low-phase-noise frequency-quadrupled microwave generation without any filter is demonstrated. In this scheme, a multimode optoelectronic oscillator is mainly contributed by dual-parallel Mach-Zehnder modulators, fiber, photodetector, and microwave amplifier. The local source signal is modulated by a child MZM (MZMa), which is worked at maximum transmission point. Through properly adjusting the bias voltages of the other child MZM (MZMb) and the parent MZM (MZMc), optical carrier is effectively suppressed and second sidebands are retained, then the survived optical signal is fed back to the photodetector and MZMb to form an optoelectronic hybrid resonator and realize frequency-quadrupled signal generation. Due to the high Q-factor and mode selection effect of the optoelectronic hybrid resonator, compared with the source signal, the generated frequency-quadrupled signal has a lower phase noise. The approach has verified by experiments, and 18, 22, and 26 GHz frequency-quadrupled signal are generated by 4.5, 5.5, and 6.5 GHz local source signals. Compared with 4.5 GHz source signal, the phase noise of generated 18 GHz signal at 10 kHz frequency offset has 26.5 dB reduction.

Integrated NEMS and optoelectronics for sensor applications.

Energy Technology Data Exchange (ETDEWEB)

Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R. (Symphony Acoustics, Rio Rancho, NM); Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade (Symphony Acoustics, Rio Rancho, NM); Okandan, Murat; Peterson, Kenneth Allen

2008-01-01

This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

Optoelectronic studies on heterocyclic bases of deoxyribonucleic acid for DNA photonics.

Science.gov (United States)

El-Diasty, Fouad; Abdel-Wahab, Fathy

2015-10-01

The optoelectronics study of large molecules, particularly π-stacking molecules, such as DNA is really an extremely difficult task. We perform first electronic structure calculations on the heterocyclic bases of 2'-deoxyribonucleic acid based on Lorentz-Fresnel dispersion theory. In the UV-VIS range of spectrum, many of the optoelectronic parameters for DNA four bases namely adenine, guanine, cytosine and thymine are calculated and discussed. The results demonstrate that adenine has the highest hyperpolarizability, whereas thymine has the lowest hyperpolarizability. Cytosine has the lower average oscillator energy and the higher lattice energy. Thymine infers the most stable nucleic base with the lower phonon energy. Thymine also has the highest average oscillator energy and the lower lattice energy. Moreover, the four nucleic acid bases have large band gap energies less than 5 eV with a semiconducting behavior. Guanine shows the smallest band gap and the highest Fermi level energy, whereas adenine elucidates the highest band gap energy. Copyright © 2015. Published by Elsevier B.V.

Radiation-induced attenuation in integrated optical materials

International Nuclear Information System (INIS)

Evans, B.D.

1989-01-01

This paper reports that three materials commonly employed in opto-electronic integrated circuits evaluated for radiation-induced optical attenuation in the range 300 nm to 3000 nm. These include optically clear epoxy and crystalline lithium niobate after Co-60 exposure and crystalline tellurium dioxide after mixed gamma/fast-neutron exposure. In all these materials, however, induced loss was restricted to shorter wavelengths; attenuation induced at the telecommunications windows near 850, 1300 and 1550 nm was <0.1 dB/cm

Comparing of γ-ray, proton and neutron radiation effects on optoelectronics for space

International Nuclear Information System (INIS)

Yu Qingkui; Tang Min; Meng Meng; Li Pengwei; Wen Ping; Li Haian; Tang Jiesen; Wang Sixin; Song Yamei

2014-01-01

We performed irradiation test on optoelectronics with γ-rays, proton and neutron. The electrical measurements were performed pre and after irradiation. The degradations induced by each radiation source was compared. (authors)

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

Science.gov (United States)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Mechanics of advanced functional materials

CERN Document Server

Wang, Biao

2013-01-01

Mechanics of Advanced Functional Materials emphasizes the coupling effect between the electric and mechanical field in the piezoelectric, ferroelectric and other functional materials. It also discusses the size effect on the ferroelectric domain instability and phase transition behaviors using the continuum micro-structural evolution models. Functional materials usually have a very wide application in engineering due to their unique thermal, electric, magnetic, optoelectronic, etc., functions. Almost all the applications demand that the material should have reasonable stiffness, strength, fracture toughness and the other mechanical properties. Furthermore, usually the stress and strain fields on the functional materials and devices have some important coupling effect on the functionality of the materials. Much progress has been made concerning the coupling electric and mechanical behaviors such as the coupled electric and stress field distribution in piezoelectric solids, ferroelectric domain patterns in ferr...

Effect of methyl substitution on optoelectronic properties of 1,3,6,8-tetraphenyl pyrenes

Directory of Open Access Journals (Sweden)

LIU Yanling

2014-06-01

Full Text Available Geometric structures of the ground states and excited states,frontier molecular orbitals,ionization potentials,electron affinities,reorganization energies,and absorption and emission spectra of three novel methyl-substituted 1,3,6,8-tetra-phenylpyrenes were studied theoretically by quantum-chemical methods,such as density functional theory (DFT.The results show that the position of methyl substituent on benzene ring has much effect on the optoelectronic properties of methyl-substituted 1,3,6,8-tetra-phenylpyrenes.Interestingly,the geometric structures and optoelectronic properties of the designed compound 1,3,6,8-tetra-p-tolylpyrene (TPPy are similar to those of 1,3,6,8-tetrakis(3,5-dimethylphenylpyrene (TDMPPy,which is worthy of being further researched.

Excitonic and photonic processes in materials

CERN Document Server

Williams, Richard

2015-01-01

This book is expected to present state-of-the-art understanding of a selection of excitonic and photonic processes in useful materials from semiconductors to insulators to metal/insulator nanocomposites, both inorganic and organic.  Among the featured applications are components of solar cells, detectors, light-emitting devices, scintillators, and materials with novel optical properties.  Excitonic properties are particularly important in organic photovoltaics and light emitting devices, as also in questions of the ultimate resolution and efficiency of new-generation scintillators for medical diagnostics,  border security, and nuclear nonproliferation.  Novel photonic and optoelectronic applications benefit from new material combinations and structures to be discussed.

Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

International Nuclear Information System (INIS)

Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

2010-01-01

Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

Study of Optoelectronics Properties of Anisotropic Semiconductor Compounds with Ordered Stochiometric Vacancy

National Research Council Canada - National Science Library

Roud, Iouri

2004-01-01

This report results from a contract tasking loffe Institute as follows: The main aim of the project is to carry out basic research on optoelectronic properties of CdGeAs2 and (Zn,Cd,Hg)(Ga,Al,ln)2(S,Se,Te...

Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

KAUST Repository

Ng, Tien Khee; Zhao, Chao; Priante, Davide; Ooi, Boon S.; Hussein, Mohamed Ebaid Abdrabou

2018-01-01

Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

KAUST Repository

Ng, Tien Khee

2018-02-01

Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

All-inorganic caesium lead-halide perovskite CsPbBr 3 and CsPb 2 Br 5 powders have emerged as attractive optoelectronic materials owing to their stabilities and highly efficient photoluminescence (PL). Herein we report a facile chemical route to prepare highly luminescent monoclinic CsPbBr 3 and tetragonal CsPb 2 Br 5 ...

Wonder of nanotechnology quantum optoelectronic devices and applications

CERN Document Server

Razeghi, Manijeh; von Klitzing, Klaus

2013-01-01

When you look closely, Nature is nanotechnology at its finest. From a single cell, a factory all by itself, to complex systems, such as the nervous system or the human eye, each is composed of specialized nanostructures that exist to perform a specific function. This same beauty can be mirrored when we interact with the tiny physical world that is the realm of quantum mechanics.The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, edited by Manijeh Razeghi, Leo Esaki, and Klaus von Klitzing focuses on the application of nanotechnology to modern semiconductor optoelectr

Integrated Automatic Test System for Airborne Optoelectronic Pods

International Nuclear Information System (INIS)

Zhang, Z M; Ding, M J; Wang, L

2006-01-01

Based on the introduction of the construction and basic principle of the airborne optoelectronic pod, in accordance with the performance standards of the pod, the total solution scheme of the automatic test system used for testing the combination property is proposed in this paper. The main structure, hardware and software design of the system based on the virtual instruments technology are also discussed in detail. The result of the true run proves the practicality, efficiency, high accuracy and other characteristics of the computer aided testing system based on virtual instruments

Optoelectronic properties of XIn{sub 2}S{sub 4} (X = Cd, Mg) thiospinels through highly accurate all-electron FP-LAPW method coupled with modified approximations

Energy Technology Data Exchange (ETDEWEB)

Yousaf, Masood [Department of Physics, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Dalhatu, S.A. [Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Murtaza, G. [Department of Physics, Islamia College, Peshawar, KPK (Pakistan); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 Mascara (Algeria); Sajjad, M. [School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Musa, A. [Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Rahnamaye Aliabad, H.A. [Department of Physics, Hakim Sabzevari University (Iran, Islamic Republic of); Saeed, M.A., E-mail: saeed@utm.my [Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia)

2015-03-15

Highlights: • Highly accurate all-electron FP-LAPW+lo method is used. • New physical parameters are reported, important for the fabrication of optoelectronic devices. • A comparative study that involves FP-LAPW+lo method and modified approximations. • Computed band gap values have good agreement with the experimental values. • Optoelectronic results of fundamental importance can be utilized for the fabrication of devices. - Abstract: We report the structural, electronic and optical properties of the thiospinels XIn{sub 2}S{sub 4} (X = Cd, Mg), using highly accurate all-electron full potential linearized augmented plane wave plus local orbital method. In order to calculate the exchange and correlation energies, the method is coupled with modified techniques such as GGA+U and mBJ-GGA, which yield improved results as compared to the previous studies. GGA+SOC approximation is also used for the first time on these compounds to examine the spin orbit coupling effect on the band structure. From the analysis of the structural parameters, robust character is predicted for both materials. Energy band structures profiles are fairly the same for GGA, GGA+SOC, GGA+U and mBJ-GGA, confirming the indirect and direct band gap nature of CdIn{sub 2}S{sub 4} and MgIn{sub 2}S{sub 4} materials, respectively. We report the trend of band gap results as: (mBJ-GGA) > (GGA+U) > (GGA) > (GGA+SOC). Localized regions appearing in the valence bands for CdIn{sub 2}S{sub 4} tend to split up nearly by ≈1 eV in the case of GGA+SOC. Many new physical parameters are reported that can be important for the fabrication of optoelectronic devices. Optical spectra namely, dielectric function (DF), refractive index n(ω), extinction coefficient k(ω), reflectivity R(ω), optical conductivity σ(ω), absorption coefficient α(ω) and electron loss function are discussed. Optical’s absorption edge is noted to be 1.401 and 1.782 for CdIn{sub 2}S{sub 4} and MgIn{sub 2}S{sub 4}, respectively. The

Combined experimental–theoretical study of the optoelectronic properties of non-stoichiometric pyrochlore bismuth titanate

KAUST Repository

Noureldine, Dalal

2015-10-27

A combination of experimental and computational methods was applied to investigate the crystal structure and optoelectronic properties of the non-stoichiometric pyrochlore Bi2−xTi2O7−1.5x. The detailed experimental protocol for both powder and thin-film material synthesis revealed that a non-stoichiometric Bi2−xTi2O7−1.5x structure with an x value of ∼0.25 is the primary product, consistent with the thermodynamic stability of the defect-containing structure computed using density functional theory (DFT). The approach of density functional perturbation theory (DFPT) was used along with the standard GGA PBE functional and the screened Coulomb hybrid HSE06 functional, including spin–orbit coupling, to investigate the electronic structure, the effective electron and hole masses, the dielectric constant, and the absorption coefficient. The calculated values for these properties are in excellent agreement with the measured values, corroborating the overall analysis. This study indicates potential applications of bismuth titanate as a wide-bandgap material, e.g., as a substitute for TiO2 in dye-sensitized solar cells and UV-light-driven photocatalysis.

Structural and Optoelectronic Properties of Cubic CsPbF3 for Novel Applications

International Nuclear Information System (INIS)

Murtaza, G.; Ahmad, Iftikhar; Maqbool, M.; Rahnamaye Aliabad, H. A.; Afaq, A.

2011-01-01

Chemical bonding as well as structural, electronic and optical properties of CsPbF 3 are calculated using the highly accurate full potential linearized augmented plane-wave method within the framework of density functional theory (DFT). The calculated lattice constant is found to be in good agreement with the experimental results. The electron density plots reveal strong ionic bonding in Cs-F and strong covalent bonding in Pb-F. The calculations show that the material is a direct and wide bandgap semiconductor with a fundamental gap at the R-symmetry point. Optical properties such as the real and imaginary parts of the dielectric function, refractive index, extinction coefficient, reflectivity, optical conductivity and absorption coefficient are also calculated. Based on the calculated wide and direct bandgap, as well as other optical properties of the compound, it is predicted that CsPbF 3 is suitable for optoelectronic devices and anti-reflecting coatings. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

All-optoelectronic continuous wave THz imaging for biomedical applications

International Nuclear Information System (INIS)

Siebert, Karsten J; Loeffler, Torsten; Quast, Holger; Thomson, Mark; Bauer, Tobias; Leonhardt, Rainer; Czasch, Stephanie; Roskos, Hartmut G

2002-01-01

We present an all-optoelectronic THz imaging system for ex vivo biomedical applications based on photomixing of two continuous-wave laser beams using photoconductive antennas. The application of hyperboloidal lenses is discussed. They allow for f-numbers less than 1/2 permitting better focusing and higher spatial resolution compared to off-axis paraboloidal mirrors whose f-numbers for practical reasons must be larger than 1/2. For a specific histological sample, an analysis of image noise is discussed

Comprehensive study of the influence of different environments on degradation processes in F8BT: Correlating optoelectronic properties with Raman measurements

International Nuclear Information System (INIS)

Linde, Sivan; Shikler, Rafi

2013-01-01

There is a growing interest in conjugated polymers from both industrial and academic points of views. The reasons are their tunable optoelectronic properties, ease of production, and excellent mechanical properties. However, the ease with which their optoelectronic properties are tunable make devices based on them prone to fast degradation and therefore, short life time. The issue of degradation of organic based optoelectronic devices is the topic of many ongoing researches. However, much less attention is given to degradation processes of the individual components of the devices and their dependence on the environmental conditions. In this work, we report on the degradation of a film of a polyfluorene block copolymer F8BT that is used in a variety of optoelectronic devices under different environments: Sun exposure, heating, and UV exposure in inert and ambient conditions. Degradation was observed in most of the optoelectronic properties of the film. Topographic measurements did not show observable changes of the film morphology following degradation. However, Raman spectroscopy measurements show changes that indicate degradation in one of the building blocks of the copolymer that is associated with electron's conduction. The absolute value of the correlation coefficient between the decrease in the Raman signal and the decrease in the optoelectronic properties is larger than 0.95 under sun exposure it is larger than 0.8 under all other ambient exposures and smaller than 0.65 under inert conditions. These results support the assumption that Oxygen, not necessarily through photo-oxidation, and also water play an important role in the degradation process and indicate the part of the polymer that is most susceptible to degradation

Analysis on the dynamic error for optoelectronic scanning coordinate measurement network

Science.gov (United States)

Shi, Shendong; Yang, Linghui; Lin, Jiarui; Guo, Siyang; Ren, Yongjie

2018-01-01

Large-scale dynamic three-dimension coordinate measurement technique is eagerly demanded in equipment manufacturing. Noted for advantages of high accuracy, scale expandability and multitask parallel measurement, optoelectronic scanning measurement network has got close attention. It is widely used in large components jointing, spacecraft rendezvous and docking simulation, digital shipbuilding and automated guided vehicle navigation. At present, most research about optoelectronic scanning measurement network is focused on static measurement capacity and research about dynamic accuracy is insufficient. Limited by the measurement principle, the dynamic error is non-negligible and restricts the application. The workshop measurement and positioning system is a representative which can realize dynamic measurement function in theory. In this paper we conduct deep research on dynamic error resources and divide them two parts: phase error and synchronization error. Dynamic error model is constructed. Based on the theory above, simulation about dynamic error is carried out. Dynamic error is quantized and the rule of volatility and periodicity has been found. Dynamic error characteristics are shown in detail. The research result lays foundation for further accuracy improvement.

A low noise preamplifier with optoelectronic overload protection for radioactivity measurement

International Nuclear Information System (INIS)

Sephton, J.P.; Williams, J.M.; Johansson, L.C.; Philips, H.C.

2012-01-01

Pulses from detectors used for radioactivity measurement can vary in size by several orders of magnitude. Large pulses will lead to saturation at the preamplifier output and extension of the pulse length. As a consequence, the dead time of the system increases and pulses may be lost. Electronic design techniques employed to protect against overloading tend to increase the amplifier noise level. However, an optoelectronic method of overload protection has been devised which has only a negligible effect on noise. An infrared light emitting diode interfaced to the output of the preamplifier is linked by fibre optic cable to an ultra-low leakage photodiode at the input. The conduction of the photodiode increases with the amplitude of the preamplifier output signal. Excess current is thereby prevented from entering the preamplifier and causing saturation. The preamplifier has been tested on 4π beta–gamma and gas counting systems and found to give good protection against overloading. - Highlights: ► A preamplifier for radioactivity measurements has been developed. ► Low noise. ► Current sensitive. ► Optoelectronic overload protection.

Laser induced forward transfer of soft materials

International Nuclear Information System (INIS)

Palla-Papavlu, A; Dinca, V; Luculescu, C; Dinescu, M; Shaw-Stewart, J; Lippert, T; Nagel, M

2010-01-01

A strong research effort is presently aimed at patterning methodologies for obtaining controlled defined micrometric polymeric structures for a wide range of applications, including electronics, optoelectronics, sensors, medicine etc. Lasers have been identified as appropriate tools for processing of different materials, such as ceramics and metals, but also for soft, easily damageable materials (biological compounds and polymers). In this work we study the dynamics of laser induced forward transfer (LIFT) with a gap between the donor and the receiver substrates, which is the basis for possible applications that require multilayer depositions with high spatial resolution

Microgravity Processing and Photonic Applications of Organic and Polymeric Materials

Science.gov (United States)

Frazier, Donald 0; Penn, Benjamin G.; Smith, David; Witherow, William K.; Paley, M. S.; Abdeldayem, Hossin A.

1998-01-01

In recent years, a great deal of interest has been directed toward the use of organic materials in the development of high-efficiency optoelectronic and photonic devices. There is a myriad of possibilities among organic which allow flexibility in the design of unique structures with a variety of functional groups. The use of nonlinear optical (NLO) organic materials such as thin-film waveguides allows full exploitation of their desirable qualities by permitting long interaction lengths and large susceptibilities allowing modest power input. There are several methods in use to prepare thin films, such as Langmuir-Blodgett (LB) and self-assembly techniques, vapor deposition, growth from sheared solution or melt, and melt growth between glass plates. Organics have many features that make Abstract: them desirable for use in optical devices such as high second- and third-order nonlinearities, flexibility of molecular design, and damage resistance to optical radiation. However, their use in devices has been hindered by processing difficulties for crystals and thin films. In this chapter, we discuss photonic and optoelectronic applications of a few organic materials and the potential role of microgravity on processing these materials. It is of interest to note how materials with second- and third-order nonlinear optical behavior may be improved in a diffusion-limited environment and ways in which convection may be detrimental to these materials. We focus our discussion on third-order materials for all-optical switching, and second-order materials for all-optical switching, and second-order materials for frequency conversion and electrooptics.

SPEKTROP DPU: optoelectronic platform for fast multispectral imaging

Science.gov (United States)

Graczyk, Rafal; Sitek, Piotr; Stolarski, Marcin

2010-09-01

In recent years it easy to spot and increasing need of high-quality Earth imaging in airborne and space applications. This is due fact that government and local authorities urge for up to date topological data for administrative purposes. On the other hand, interest in environmental sciences, push for ecological approach, efficient agriculture and forests management are also heavily supported by Earth images in various resolutions and spectral ranges. "SPEKTROP DPU: Opto-electronic platform for fast multi-spectral imaging" paper describes architectural datails of data processing unit, part of universal and modular platform that provides high quality imaging functionality in aerospace applications.

Design of optoelectronic system for optical diffusion tomography

Directory of Open Access Journals (Sweden)

Erakhtin Igor

2017-01-01

Full Text Available This article explores issues connected with the circuit design of a device for optical diffusion tomography, which we are currently designing. We plan to use the device in experimental studies for the development of a faster method of brain hematoma detection. We reviewed currently existing methods for emergency diagnosis of hematomas, primarily the Infrascanner model 2000, for which we identified weaknesses, and outlined suggestions for improvements. This article describes the method of scanning tissues based on a triangulated arrangement of sources and receivers of optical radiation, and it discusses the optoelectronic system that implements that principle.

How phase composition influences optoelectronic and photocatalytic properties of TiO2

NARCIS (Netherlands)

Carneiro, J.T.; Carneiro, Joana T.; Savenije, Tom J.; Moulijn, Jacob A.; Mul, Guido

2011-01-01

In the present study the ratio of rutile and anatase phases in sol−gel-synthe-sized TiO2 was varied by calcination at temperatures ranging from 500 to 900 °C. Changes in opto-electronic properties were analyzed by time-resolved microwave conductance measurements (TRMC) and evaluated by comparison of

Engineering light emission of two-dimensional materials in both the weak and strong coupling regimes

Science.gov (United States)

Brotons-Gisbert, Mauro; Martínez-Pastor, Juan P.; Ballesteros, Guillem C.; Gerardot, Brian D.; Sánchez-Royo, Juan F.

2018-01-01

Two-dimensional (2D) materials have promising applications in optoelectronics, photonics, and quantum technologies. However, their intrinsically low light absorption limits their performance, and potential devices must be accurately engineered for optimal operation. Here, we apply a transfer matrix-based source-term method to optimize light absorption and emission in 2D materials and related devices in weak and strong coupling regimes. The implemented analytical model accurately accounts for experimental results reported for representative 2D materials such as graphene and MoS2. The model has been extended to propose structures to optimize light emission by exciton recombination in MoS2 single layers, light extraction from arbitrarily oriented dipole monolayers, and single-photon emission in 2D materials. Also, it has been successfully applied to retrieve exciton-cavity interaction parameters from MoS2 microcavity experiments. The present model appears as a powerful and versatile tool for the design of new optoelectronic devices based on 2D semiconductors such as quantum light sources and polariton lasers.

Adaptive integral backstepping sliding mode control for opto-electronic tracking system based on modified LuGre friction model

Science.gov (United States)

Yue, Fengfa; Li, Xingfei; Chen, Cheng; Tan, Wenbin

2017-12-01

In order to improve the control accuracy and stability of opto-electronic tracking system fixed on reef or airport under friction and external disturbance conditions, adaptive integral backstepping sliding mode control approach with friction compensation is developed to achieve accurate and stable tracking for fast moving target. The nonlinear observer and slide mode controller based on modified LuGre model with friction compensation can effectively reduce the influence of nonlinear friction and disturbance of this servo system. The stability of the closed-loop system is guaranteed by Lyapunov theory. The steady-state error of the system is eliminated by integral action. The adaptive integral backstepping sliding mode controller and its performance are validated by a nonlinear modified LuGre dynamic model of the opto-electronic tracking system in simulation and practical experiments. The experiment results demonstrate that the proposed controller can effectively realise the accuracy and stability control of opto-electronic tracking system.

1D Piezoelectric Material Based Nanogenerators: Methods, Materials and Property Optimization.

Science.gov (United States)

Li, Xing; Sun, Mei; Wei, Xianlong; Shan, Chongxin; Chen, Qing

2018-03-23

Due to the enhanced piezoelectric properties, excellent mechanical properties and tunable electric properties, one-dimensional (1D) piezoelectric materials have shown their promising applications in nanogenerators (NG), sensors, actuators, electronic devices etc. To present a clear view about 1D piezoelectric materials, this review mainly focuses on the characterization and optimization of the piezoelectric properties of 1D nanomaterials, including semiconducting nanowires (NWs) with wurtzite and/or zinc blend phases, perovskite NWs and 1D polymers. Specifically, the piezoelectric coefficients, performance of single NW-based NG and structure-dependent electromechanical properties of 1D nanostructured materials can be respectively investigated through piezoresponse force microscopy, atomic force microscopy and the in-situ scanning/transmission electron microcopy. Along with the introduction of the mechanism and piezoelectric properties of 1D semiconductor, perovskite materials and polymers, their performance improvement strategies are summarized from the view of microstructures, including size-effect, crystal structure, orientation and defects. Finally, the extension of 1D piezoelectric materials in field effect transistors and optoelectronic devices are simply introduced.

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

Science.gov (United States)

Moustakas, Theodore D.; Paiella, Roberto

2017-10-01

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

KAUST Repository

Douglas, Jessica D.; Chen, Mark S.; Niskala, Jeremy R.; Lee, Olivia P.; Yiu, Alan T.; Young, Eric P.; Frechet, Jean

2014-01-01

Solution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices

Phase change - memory materials - composition, structure, and properties

Czech Academy of Sciences Publication Activity Database

Frumar, M.; Frumarová, Božena; Wágner, T.; Hrdlička, M.

2007-01-01

Roč. 18, suppl.1 (2007), S169-S174 ISSN 0957-4522. [International Conference on Optical and Optoelectronic Properties of Materials and Applications 2006. Darwin, 16.06.2006-20.06.2006] R&D Projects: GA ČR GA203/06/0627 Institutional research plan: CEZ:AV0Z40500505 Keywords : phase change memory Subject RIV: CA - Inorganic Chemistry Impact factor: 0.947, year: 2007

78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Science.gov (United States)

2013-03-14

... Fiber Optic Communications, Components Thereof, and Products Containing Same; Commission Determination... United States after importation of certain optoelectronic devices for fiber optic communications... Fiber IP (Singapore) Pte. Ltd. of Singapore (``Avago Fiber IP''); Avago General IP and Avago...

Optoelectronic insights into the photovoltaic losses from photocurrent, voltage, and energy perspectives

Science.gov (United States)

Shang, Aixue; An, Yidan; Ma, Dong; Li, Xiaofeng

2017-08-01

Photocurrent and voltage losses are the fundamental limitations for improving the efficiency of photovoltaic devices. It is indeed that a comprehensive and quantitative differentiation of the performance degradation in solar cells will promote the understanding of photovoltaic physics as well as provide a useful guidance to design highly-efficient and cost-effective solar cells. Based on optoelectronic simulation that addresses electromagnetic and carrier-transport responses in a coupled finite-element method, we report a detailed quantitative analysis of photocurrent and voltage losses in solar cells. We not only concentrate on the wavelength-dependent photocurrent loss, but also quantify the variations of photocurrent and operating voltage under different forward electrical biases. Further, the device output power and power losses due to carrier recombination, thermalization, Joule heat, and Peltier heat are studied through the optoelectronic simulation. The deep insight into the gains and losses of the photocurrent, voltage, and energy will contribute to the accurate clarifications of the performance degradation of photovoltaic devices, enabling a better control of the photovoltaic behaviors for high performance.

Optoelectronic iron detectors for pharmaceutical flow analysis.

Science.gov (United States)

Rybkowska, Natalia; Koncki, Robert; Strzelak, Kamil

2017-10-25

Compact flow-through optoelectronic detectors fabricated by pairing of light emitting diodes have been applied for development of economic flow analysis systems dedicated for iron ions determination. Three analytical methods with different chromogens selectively recognizing iron ions have been compared. Ferrozine and ferene S based methods offer higher sensitivity and slightly lower detection limits than method with 1,10-phenantroline, but narrower ranges of linear response. Each system allows detection of iron in micromolar range of concentration with comparable sample throughput (20 injections per hour). The developed flow analysis systems have been successfully applied for determination of iron in diet supplements. The utility of developed analytical systems for iron release studies from drug formulations has also been demonstrated. Copyright © 2017 Elsevier B.V. All rights reserved.

Selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children

Science.gov (United States)

Landowska, A.; Karpienko, K.; Wróbel, M.; Jedrzejewska-Szczerska, M.

2014-11-01

In this article the procedure of selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children is proposed. Authors designed and conducted an experiment in which a group of 30 health volunteers (16 females and 14 males) were examined. Under controlled conditions people were exposed to a stressful situation caused by the picture or sound (1kHz constant sound, which was gradually silenced and finished with a shot sound). For each of volunteers, a set of physiological parameters were recorded, including: skin conductance, heart rate, peripheral temperature, respiration rate and electromyography. The selected characteristics were measured in different locations in order to choose the most suitable one for the designed therapy supporting system. The bio-statistical analysis allowed us to discern the proper physiological parameters that are most associated to changes due to emotional state of a patient, such as: skin conductance, temperatures and respiration rate. This allowed us to design optoelectronic sensors network for supporting behavioral therapy of children with autism.

Engineering light outcoupling in 2D materials

KAUST Repository

Lien, Derhsien

2015-02-11

When light is incident on 2D transition metal dichalcogenides (TMDCs), it engages in multiple reflections within underlying substrates, producing interferences that lead to enhancement or attenuation of the incoming and outgoing strength of light. Here, we report a simple method to engineer the light outcoupling in semiconducting TMDCs by modulating their dielectric surroundings. We show that by modulating the thicknesses of underlying substrates and capping layers, the interference caused by substrate can significantly enhance the light absorption and emission of WSe2, resulting in a ∼11 times increase in Raman signal and a ∼30 times increase in the photoluminescence (PL) intensity of WSe2. On the basis of the interference model, we also propose a strategy to control the photonic and optoelectronic properties of thin-layer WSe2. This work demonstrates the utilization of outcoupling engineering in 2D materials and offers a new route toward the realization of novel optoelectronic devices, such as 2D LEDs and solar cells.

Engineering light outcoupling in 2D materials

KAUST Repository

Lien, Derhsien; Kang, Jeongseuk; Amani, Matin; Chen, Kevin; Tosun, Mahmut; Wang, Hsinping; Roy, Tania; Eggleston, Michael S.; Wu, Ming C.; Dubey, Madan; Lee, Sichen; He, Jr-Hau; Javey, Ali

2015-01-01

When light is incident on 2D transition metal dichalcogenides (TMDCs), it engages in multiple reflections within underlying substrates, producing interferences that lead to enhancement or attenuation of the incoming and outgoing strength of light. Here, we report a simple method to engineer the light outcoupling in semiconducting TMDCs by modulating their dielectric surroundings. We show that by modulating the thicknesses of underlying substrates and capping layers, the interference caused by substrate can significantly enhance the light absorption and emission of WSe2, resulting in a ∼11 times increase in Raman signal and a ∼30 times increase in the photoluminescence (PL) intensity of WSe2. On the basis of the interference model, we also propose a strategy to control the photonic and optoelectronic properties of thin-layer WSe2. This work demonstrates the utilization of outcoupling engineering in 2D materials and offers a new route toward the realization of novel optoelectronic devices, such as 2D LEDs and solar cells.

Two-dimensional materials for ultrafast lasers

International Nuclear Information System (INIS)

Wang Fengqiu

2017-01-01

As the fundamental optical properties and novel photophysics of graphene and related two-dimensional (2D) crystals are being extensively investigated and revealed, a range of potential applications in optical and optoelectronic devices have been proposed and demonstrated. Of the many possibilities, the use of 2D materials as broadband, cost-effective and versatile ultrafast optical switches (or saturable absorbers) for short-pulsed lasers constitutes a rapidly developing field with not only a good number of publications, but also a promising prospect for commercial exploitation. This review primarily focuses on the recent development of pulsed lasers based on several representative 2D materials. The comparative advantages of these materials are discussed, and challenges to practical exploitation, which represent good future directions of research, are laid out. (paper)

Advances in laser ablation of materials

International Nuclear Information System (INIS)

Singh, R.K.; Lowndes, D.H.; Chrisey, D.B.; Fogarassy, E.; Narayan, J.

1998-01-01

The symposium, Advances in Laser Ablation of Materials, was held at the 1998 MRS Spring Meeting in San Francisco, California. The papers in this symposium illustrate the advances in pulsed laser ablation for a wide variety of applications involving semiconductors, superconductors, metals, ceramics, and polymers. In particular, advances in the deposition of oxides and related materials are featured. Papers dealing with both fundamentals and the applications of laser ablation are presented. Topical areas include: fundamentals of ablation and growth; in situ diagnostics and nanoscale synthesis advances in laser ablation techniques; laser surface processing; pulsed laser deposition of ferroelectric, magnetic, superconducting and optoelectronic thin films; and pulsed laser deposition of carbon-based and polymeric materials. Sixty papers have been processed separately for inclusion on the data base

Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

Science.gov (United States)

Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

2018-01-01

2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

Performance and calibration of the CHORUS scintillating fiber tracker and opto-electronics readout system

International Nuclear Information System (INIS)

Annis, P.; Aoki, S.; Brunner, J.; De Jong, M.; Fabre, J.P.; Ferreira, R.; Flegel, W.; Frekers, D.; Gregoire, G.; Herin, J.; Kobayashi, M.; Konijn, J.; Lemaitre, V.; Macina, D.; Meijer Drees, R.; Meinhard, H.; Michel, L.; Mommaert, C.; Nakamura, K.; Nakamura, M.; Nakano, T.; Niwa, K.; Niu, E.; Panman, J.; Riccardi, F.; Rondeshagen, D.; Sato, O.; Stefanini, G.; Vander Donckt, M.; Vilain, P.; Wilquet, G.; Winter, K.; Wong, H.T.

1995-01-01

An essential component of the CERN WA95/CHORUS experiment is a scintillating fiber tracker system for precise track reconstruction of particles. The tracker design, its opto-electronics readout and calibration system are discussed. Performances of the detector are presented. (orig.)

78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Science.gov (United States)

2013-12-20

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-860] Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY...

Tuning Optoelectronic Properties of Ambipolar Organic Light-Emitting Transistors Using a Bulk-Heterojunction Approach

NARCIS (Netherlands)

Loi, Maria Antonietta; Rost-Bietsch, Constance; Murgia, Mauro; Karg, Siegfried; Riess, Walter; Muccini, Michele

2006-01-01

Bulk-heterojunction engineering is demonstrated as an approach to producing ambipolar organic light-emitting field-effect transistors with tunable electrical and optoelectronic characteristics. The electron and hole mobilities, as well as the electroluminescence intensity, can be tuned over a large

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

Science.gov (United States)

Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

Metamaterial mirrors in optoelectronic devices

KAUST Repository

Esfandyarpour, Majid; Garnett, Erik C.; Cui, Yi; McGehee, Michael D.; Brongersma, Mark L.

2014-01-01

The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

Metamaterial mirrors in optoelectronic devices

KAUST Repository

Esfandyarpour, Majid

2014-06-22

The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

Optoelectronic circuits in nanometer CMOS technology

CERN Document Server

Atef, Mohamed

2016-01-01

This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

Fast Photo-detection in Phototransistors based on Group III-VI Layered Materials.

Science.gov (United States)

Patil, Prasanna; Ghosh, Sujoy; Wasala, Milinda; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel; Talapatra, Saikat

Response time of a photo detector is one of the crucial aspect of photo-detection. Recently it has been shown that direct band gap of few layered group III-VI materials helps in increased absorption of light thereby enhancing the photo responsive properties of these materials. Ternary system of Copper Indium Selenide has been extensively used in optoelectronics industry and it is expected that 2D layered structure of Copper Indium Selenide will be a key component of future optoelectronics devices based on 2D materials. Here we report fast photo detection in few layers of Copper Indium Selenide (CuIn7Se11) phototransistor. Few-layers of CuIn7Se11 flakes were exfoliated from crystals grown using chemical vapor transport technique. Our photo response characterization indicates responsivity of 104 mA/W with external quantum efficiency exceeding 103. We have found response time of few μs which is one of the fastest response among photodetectors based on 2D materials. We also found specific detectivity of 1012 Jones which is an order higher than conventional photodetectors. A comparison between response times of various layered group III-VI materials will be presented and discussed. This work is supported by the U.S. Army Research Office through a MURI Grant # W911NF-11-1-0362.

Optoelectronic device for the measurement of the absolute linear position in the micrometric displacement range

Science.gov (United States)

Morlanes, Tomas; de la Pena, Jose L.; Sanchez-Brea, Luis M.; Alonso, Jose; Crespo, Daniel; Saez-Landete, Jose B.; Bernabeu, Eusebio

2005-07-01

In this work, an optoelectronic device that provides the absolute position of a measurement element with respect to a pattern scale upon switch-on is presented. That means that there is not a need to perform any kind of transversal displacement after the startup of the system. The optoelectronic device is based on the process of light propagation passing through a slit. A light source with a definite size guarantees the relation of distances between the different elements that constitute our system and allows getting a particular optical intensity profile that can be measured by an electronic post-processing device providing the absolute location of the system with a resolution of 1 micron. The accuracy of this measuring device is restricted to the same limitations of any incremental position optical encoder.

Combined experimental and theoretical assessments of the lattice dynamics and optoelectronics of TaON and Ta{sub 3}N{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Nurlaela, Ela; Harb, Moussab [Division of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), 4700 KAUST, Thuwal 23955-6900 Saudi Arabia (Saudi Arabia); Gobbo, Silvano del [Solar and Photovoltaic Engineering Center, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Vashishta, Manish [Division of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), 4700 KAUST, Thuwal 23955-6900 Saudi Arabia (Saudi Arabia); Takanabe, Kazuhiro, E-mail: kazuhiro.takanabe@kaust.edu.sa [Division of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), 4700 KAUST, Thuwal 23955-6900 Saudi Arabia (Saudi Arabia)

2015-09-15

Presented herein is a detailed discussion of the properties of the lattice dynamic and optoelectronic properties of tantalum(V) oxynitride (TaON) and tantalum(V) nitride (Ta{sub 3}N{sub 5}), from experimental and theoretical standpoint. The active Raman and infra red (IR) frequencies of TaON and Ta{sub 3}N{sub 5} were measured using confocal Raman and Fourier Transform Infrared spectroscopies (FTIR) and calculated using the linear response method within the density functional perturbation theory (DFPT). The detailed study leads to an exhaustive description of the spectra, including the symmetry of the vibrational modes. Electronic structures of these materials were computed using DFT within the range-separated hybrid HSE06 exchange–correlation formalism. Electronic and ionic contributions to the dielectric constant tensors of these materials were obtained from DFPT within the linear response method using the PBE functional. Furthermore, effective mass of photogenerated holes and electrons at the band edges of these compounds were computed from the electronic band structure obtained at the DFT/HSE06 level of theory. The results suggest that anisotropic nature in TaON and Ta{sub 3}N{sub 5} is present in terms of dielectric constant and effective masses. - Graphical abstract: Detailed investigation has been conducted from combined experimental and theoretical approaches on Raman and IR spectroscopies, electronic structures, dielectric constants and effective masses of TaON and Ta{sub 3}N{sub 5}. - Highlights: • Crystal structures of TaON and Ta{sub 3}N{sub 5} are discussed based on XRD and DFT calculation. • Raman and IR spectra of TaON and Ta{sub 3}N{sub 5} materials are measured and computed by DFPT method. • Optoelectronic properties of TaON and Ta{sub 3}N{sub 5} are discussed. • Dielectric constant and effective masses of TaON and Ta{sub 3}N{sub 5} are calculated.

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

KAUST Repository

Mumthaz Muhammed, Mufasila

2018-01-01

performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique

Combined experimental–theoretical study of the optoelectronic properties of non-stoichiometric pyrochlore bismuth titanate

KAUST Repository

Noureldine, Dalal; Lardhi, Sheikha F.; Ziani, Ahmed; Harb, Moussab; Cavallo, Luigi; Takanabe, Kazuhiro

2015-01-01

A combination of experimental and computational methods was applied to investigate the crystal structure and optoelectronic properties of the non-stoichiometric pyrochlore Bi2−xTi2O7−1.5x. The detailed experimental protocol for both powder and thin

Novel soluble fluorene-thienothiadiazole and fluorene-carbazole copolymers for optoelectronics

Czech Academy of Sciences Publication Activity Database

Cimrová, Věra; Kmínek, Ivan; Výprachtický, Drahomír

2010-01-01

Roč. 295, č. 1 (2010), s. 65-70 ISSN 1022-1360. [Prague Meetings on Macromolecules /73./ New Frontiers in Macromolecular Science: From Macromolecular Concepts of Living Matter to Polymers for Better Quality of Life. Prague, 05.07.2009-09.07.2009] R&D Projects: GA MŠk(CZ) 1M06031; GA AV ČR IAA4050409 Institutional research plan: CEZ:AV0Z40500505 Keywords : fluorene – thienothiadiazole copolymers * photovoltaics * fluorene-carbazole copolymers Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering

Optoelectronic properties of a novel fluorene derivative for organic light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Yu, Junsheng; Lou, Shuangling; Qian, Jincheng; Jiang, Yadong [University of Electronic Science and Technology of China (UESTC), State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, Chengdu (China); Zhang, Qing [Shanghai Jiaotong University, Department of Polymer Science, School of Chemistry and Chemical Technology, Shanghai (China)

2009-03-15

We report the optoelectronic properties of a novel fluorene derivative of 6,6'-(9H-fluoren-9,9-diyl)bis(2,3-bis (9,9-dihexyl-9H-fluoren-2-yl)quinoxaline) (BFLBBFLYQ) used for organic light-emitting diode. UV-Vis absorption, photoluminescence (PL) and electroluminescence (EL) spectra of BFLBBFLYQ and the blend doped with N,N'-biphenyl-N,N'-bis-(3-methylphenyl)-1,1'-biphenyl-4,4'-di- amine (TPD) in solid state and in solution were investigated. The results showed that BFLBBFLYQ had a PL peak at 451 nm in solid and solution states and an EL peak at 483 nm with a broad emission band, resulting from fluorenone defects. Exciplex emission was observed in BFLBBFLYQ-TPD blend solid state with a green emission peaking at 530 nm. Also the blend in solution showed solvatochromism in polarity solvent upon UV irradiation. A new absorption band appeared at around 470 nm of BFLBBFLYQ-TPD blend in chloroform solution, and disappeared when diluted in absorption spectrum. Meanwhile, a low energy emission band from 530 to 580 nm appeared and increased with material concentration and UV irradiation time. (orig.)

Synthesis and characterization of 5,7-dimethyl-8-hydroxyquinoline and 2-(2-pyridyl)benzimidazole complexes of zinc(II) for optoelectronic application

Science.gov (United States)

Singh, Kapoor; Kumar, Amit; Srivastava, Ritu; Kadyan, Partap S.; Kamalasanan, Modeeparampil N.; Singh, Ishwar

2011-11-01

Bis(5,7-dimethyl-8-hydroxyquinolinato)zinc(II) (Me 2q) 2Zn and 5,7-dimethyl-8-hydroxyquinolinato(2-(2-pyridyl)benzimidazole) zinc(II) Me 2q(pbi)Zn have been synthesized and characterized by various techniques. These metal complexes have high thermal stability (>300 °C) and high glass transition temperatures (>150 °C). The vacuum deposited films of these materials show good film forming property and are suitable for opto-electronic applications. Multilayered organic electroluminescent (EL) devices have been fabricated having structure ITO/α-NPD/zinc complex/BCP/Alq 3/LiF/Al, which produce emission with chromaticity having Commission Internationale d'Eclairage (CIE) coordinates x = 0.506 and y = 0.484 for (Me 2q) 2Zn; x = 0.47 and y = 0.52 for (Me 2q)(pbi)Zn complex. The electroluminescence spectra show peak emission centered at 572 and 561 nm respectively for these materials.

Bismuth Silver Oxysulfide for Photoconversion Applications: Structural and Optoelectronic Properties

KAUST Repository

Baqais, Amal Ali Abdulallh; Curutchet, Antton; Ziani, Ahmed; Ait Ahsaine, Hassan; Sautet, Philippe; Takanabe, Kazuhiro; Le Bahers, Tangui

2017-01-01

Single-phase bismuth silver oxysulfide, BiAgOS, was prepared by a hydrothermal method. Its structural, morphological and optoelectronic properties were investigated and compared with bismuth copper oxysulfide (BiCuOS). Rietveld refinement of the powder X-ray diffraction (XRD) measurements revealed that the BiAgOS and BiCuOS crystals have the same structure as ZrSiCuAs: the tetragonal space group P4/nmm. X-ray photoelectron spectroscopy (XPS) analyses confirmed that the BiAgOS has a high purity, in contrast with BiCuOS, which tends to have Cu vacancies. The Ag has a monovalent oxidation state, whereas Cu is present in the oxidation states of +1 and +2 in the BiCuOS system. Combined with experimental measurements, density functional theory calculations employing the range-separated hybrid HSE06 exchange-correlation functional with spin-orbit coupling quantitatively elucidated photophysical properties such as ab-sorption coefficients, effective masses and dielectric constants. BiCuOS and BiAgOS were found to have indirect bandgaps of 1.1 and 1.5 eV, respectively. Both possess high dielectric constants and low electron and hole effective masses. Therefore, these materials are expected to have high exciton dissociation capabilities and excellent carrier diffusion properties. This study reveals that BiAgOS is a promising candidate for photoconversion applications.

Bismuth Silver Oxysulfide for Photoconversion Applications: Structural and Optoelectronic Properties

KAUST Repository

Baqais, Amal Ali Abdulallh

2017-09-18

Single-phase bismuth silver oxysulfide, BiAgOS, was prepared by a hydrothermal method. Its structural, morphological and optoelectronic properties were investigated and compared with bismuth copper oxysulfide (BiCuOS). Rietveld refinement of the powder X-ray diffraction (XRD) measurements revealed that the BiAgOS and BiCuOS crystals have the same structure as ZrSiCuAs: the tetragonal space group P4/nmm. X-ray photoelectron spectroscopy (XPS) analyses confirmed that the BiAgOS has a high purity, in contrast with BiCuOS, which tends to have Cu vacancies. The Ag has a monovalent oxidation state, whereas Cu is present in the oxidation states of +1 and +2 in the BiCuOS system. Combined with experimental measurements, density functional theory calculations employing the range-separated hybrid HSE06 exchange-correlation functional with spin-orbit coupling quantitatively elucidated photophysical properties such as ab-sorption coefficients, effective masses and dielectric constants. BiCuOS and BiAgOS were found to have indirect bandgaps of 1.1 and 1.5 eV, respectively. Both possess high dielectric constants and low electron and hole effective masses. Therefore, these materials are expected to have high exciton dissociation capabilities and excellent carrier diffusion properties. This study reveals that BiAgOS is a promising candidate for photoconversion applications.

Tuning of the Morphology and Optoelectronic Properties of ZnO/P3HT/P3HT- b-PEO Hybrid Films via Spray Deposition Method.

Science.gov (United States)

Wang, Kun; Bießmann, Lorenz; Schwartzkopf, Matthias; Roth, Stephan V; Müller-Buschbaum, Peter

2018-06-20

The self-assembly of amphiphilic diblock copolymers yields the possibility of using them as a template for tailoring the film morphologies of sol-gel chemistry-derived inorganic electron transport materials, such as mesoporous ZnO and TiO 2 . However, additional steps including etching and backfilling are required for the common bulk heterojunction fabrication process when using insulating diblock copolymers. Here, we use the conducting diblock copolymer poly(3-hexylthiophene)- block-poly(ethylene oxide) (P3HT- b-PEO) in which P3HT acts as charge carrier transport material and light absorber, whereas PEO serves as a template for ZnO synthesis. The initial solution is subsequently spray-coated to obtain the hybrid film. Scanning electron microscopy and grazing-incidence small-angle X-ray scattering measurements reveal a significant change in the morphology of the hybrid films during deposition. Optoelectronic properties illustrate the improved charge separation and charge transfer process. Both the amount of the diblock copolymer and the annealing temperature play an important role in tuning the morphology and the optoelectronic properties. Hybrid films being sprayed from a solution with the ratio of ω ZnO , ω P3HT , and ω P3HT- b-PEO of 2:1:1 and subsequent annealing at 80 °C show the most promising morphology combined with an optimal photoluminescence quenching. Thus, the presented simple, reagent- and energy-saving fabrication method provides a promising approach for a large-scale preparation of bulk heterojunction P3HT/ZnO films on flexible substrates.

Optical modeling based on mean free path calculations for quantum dot phosphors applied to optoelectronic devices.

Science.gov (United States)

Shin, Min-Ho; Kim, Hyo-Jun; Kim, Young-Joo

2017-02-20

We proposed an optical simulation model for the quantum dot (QD) nanophosphor based on the mean free path concept to understand precisely the optical performance of optoelectronic devices. A measurement methodology was also developed to get the desired optical characteristics such as the mean free path and absorption spectra for QD nanophosphors which are to be incorporated into the simulation. The simulation results for QD-based white LED and OLED displays show good agreement with the experimental values from the fabricated devices in terms of spectral power distribution, chromaticity coordinate, CCT, and CRI. The proposed simulation model and measurement methodology can be applied easily to the design of lots of optoelectronics devices using QD nanophosphors to obtain high efficiency and the desired color characteristics.

Optoelectronic investigation of nanodiamond interactions with human blood

Science.gov (United States)

Ficek, M.; Wróbel, M. S.; Wasowicz, M.; Jedrzejewska-Szczerska, M.

2016-03-01

We present optoelectronic investigation of in vitro interactions of whole human blood with different nanodiamond biomarkers. Plasmo-chemical modifications of detonation nanodiamond particles gives the possibility for controlling their surface for biological applications. Optical investigations reveal the biological activity of nanodiamonds in blood dependent on its surface termination. We compare different types of nanodiamonds: commercial non-modified detonation nanodiamonds, and nanodiamonds modified by MW PACVD method with H2-termination, and chemically modified nanodiamond with O2-termination. The absorption spectra, and optical microscope investigations were conducted. The results indicate haemocompatibility of non-modified detonation nanodiamond as well as modified nanodiamonds, which enables their application for drug delivery, as well as sensing applications.

Optoelectronic imaging of speckle using image processing method

Science.gov (United States)

Wang, Jinjiang; Wang, Pengfei

2018-01-01

A detailed image processing of laser speckle interferometry is proposed as an example for the course of postgraduate student. Several image processing methods were used together for dealing with optoelectronic imaging system, such as the partial differential equations (PDEs) are used to reduce the effect of noise, the thresholding segmentation also based on heat equation with PDEs, the central line is extracted based on image skeleton, and the branch is removed automatically, the phase level is calculated by spline interpolation method, and the fringe phase can be unwrapped. Finally, the imaging processing method was used to automatically measure the bubble in rubber with negative pressure which could be used in the tire detection.

Microscopic analysis of the optoelectronic properties of semiconductor gain media for laser applications; Mikroskopische Analyse optoelektronischer Eigenschaften von Halbleiterverstaerkungsmedien fuer Laseranwendungen

Energy Technology Data Exchange (ETDEWEB)

Bueckers, Christina

2010-12-03

A microscopic many-particle theory is applied to model a wide range of semiconductor laser gain materials. The fundamental understanding of the gain medium and the underlying carrier interaction processes allow for the quantitative prediction of the optoelectronic properties governing the laser performance. Detailed theory-experiment-comparisons are shown for a variety of structures demonstrating the application capabilities of the theoretical approach. The microscopically calculated material properties, in particular absorption, optical gain, luminescence and the intrinsic carrier losses due to radiative and Auger-recombination, constitute the critical input to analyse and design laser structures. On this basis, important system features such as laser wavelength or threshold behaviour become predictable. However, the theory is also used in a diagnostic fashion, e.g. to extract otherwise poorly known structural parameter. Thus, novel concepts for the optimisation of laser designs may be developed with regard to the requirements of specific applications. Moreover, the approach allows for the systematic exploration and assessment of completely novel material systems and their application potential. (orig.)

Flexible transparent conductive materials based on silver nanowire networks: a review

International Nuclear Information System (INIS)

Langley, Daniel; Giusti, Gaël; Bellet, Daniel; Mayousse, Céline; Celle, Caroline; Simonato, Jean-Pierre

2013-01-01

The class of materials combining high electrical or thermal conductivity, optical transparency and flexibility is crucial for the development of many future electronic and optoelectronic devices. Silver nanowire networks show very promising results and represent a viable alternative to the commonly used, scarce and brittle indium tin oxide. The science and technology research of such networks are reviewed to provide a better understanding of the physical and chemical properties of this nanowire-based material while opening attractive new applications. (topical review)

Massive ordering and alignment of cylindrical micro-objects by photovoltaic optoelectronic tweezers.

Science.gov (United States)

Elvira, Iris; Muñoz-Martínez, Juan F; Barroso, Álvaro; Denz, Cornelia; Ramiro, José B; García-Cabañes, Angel; Agulló-López, Fernando; Carrascosa, Mercedes

2018-01-01

Optical tools for manipulation and trapping of micro- and nano-objects are a fundamental issue for many applications in nano- and biotechnology. This work reports on the use of one such method, known as photovoltaic optoelectronics tweezers, to orientate and organize cylindrical microcrystals, specifically elongated zeolite L, on the surface of Fe-doped LiNbO 3 crystal plates. Patterns of aligned zeolites have been achieved through the forces and torques generated by the bulk photovoltaic effect. The alignment patterns with zeolites parallel or perpendicular to the substrate surface are highly dependent on the features of light distribution and crystal configuration. Moreover, dielectrophoretic chains of zeolites with lengths up to 100 μm have often been observed. The experimental results of zeolite trapping and alignment have been discussed and compared together with theoretical simulations of the evanescent photovoltaic electric field and the dielectrophoretic potential. They demonstrate the remarkable capabilities of the optoelectronic photovoltaic method to orientate and pattern anisotropic microcrystals. The combined action of patterning and alignment offers a unique tool to prepare functional nanostructures with potential applications in a variety of fields such as nonlinear optics or plasmonics.

Thickness, morphology, and optoelectronic characteristics of pristine and surfactant-modified DNA thin films

International Nuclear Information System (INIS)

Arasu, Velu; Reddy Dugasani, Sreekantha; Son, Junyoung; Gnapareddy, Bramaramba; Ha Park, Sung; Jeon, Sohee; Jeong, Jun-Ho

2017-01-01

Although the preparation of DNA thin films with well-defined thicknesses controlled by simple physical parameters is crucial for constructing efficient, stable, and reliable DNA-based optoelectronic devices and sensors, it has not been comprehensively studied yet. Here, we construct DNA and surfactant-modified DNA thin films by drop-casting and spin-coating techniques. The DNA thin films formed with different control parameters, such as drop-volume and spin-speed at given DNA concentrations, exhibit characteristic thickness, surface roughness, surface potential, and absorbance, which are measured by a field emission scanning electron microscope, a surface profilometer, an ellipsometer, an atomic force microscope, a Kelvin probe force microscope, and an UV–visible spectroscope. From the observations, we realized that thickness significantly affects the physical properties of DNA thin films. This comprehensive study of thickness-dependent characteristics of DNA and surfactant-modified DNA thin films provides insight into the choice of fabrication techniques in order for the DNA thin films to have desired physical characteristics in further applications, such as optoelectronic devices and sensors. (paper)

Graphene and Carbon-Nanotube Nanohybrids Covalently Functionalized by Porphyrins and Phthalocyanines for Optoelectronic Properties.

Science.gov (United States)

Wang, Aijian; Ye, Jun; Humphrey, Mark G; Zhang, Chi

2018-04-01

In recent years, there has been a rapid growth in studies of the optoelectronic properties of graphene, carbon nanotubes (CNTs), and their derivatives. The chemical functionalization of graphene and CNTs is a key requirement for the development of this field, but it remains a significant challenge. The focus here is on recent advances in constructing nanohybrids of graphene or CNTs covalently linked to porphyrins or phthalocyanines, as well as their application in nonlinear optics. Following a summary of the syntheses of nanohybrids constructed from graphene or CNTs and porphyrins or phthalocyanines, explicit intraconjugate electronic interactions between photoexcited porphyrins/phthalocyanines and graphene/CNTs are introduced classified by energy transfer, electron transfer, and charge transfer, and their optoelectronic applications are also highlighted. The major current challenges for the development of covalently linked nanohybrids of porphyrins or phthalocyanines and carbon nanostructures are also presented. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

OMNI: An optoelectronic multichannel network interface based on hybrid CMOS-SEED technology

Science.gov (United States)

Pinkston, Timothy M.

1996-11-01

This paper presents a hybrid CMOS-SEED multiprocessor network interface smart pixel design that implements a reservation-based channel control protocol for collisionless concurrent access to multiple optical interprocessor communication channels. An asynchronous optical token is used as the arbitration mechanism for reservation control instead of slotted access. This work demonstrates that complex network protocol functions can be implemented using optoelectronic smart pixel technology.

Opto-electronic DNA chip-based integrated card for clinical diagnostics.

Science.gov (United States)

Marchand, Gilles; Broyer, Patrick; Lanet, Véronique; Delattre, Cyril; Foucault, Frédéric; Menou, Lionel; Calvas, Bernard; Roller, Denis; Ginot, Frédéric; Campagnolo, Raymond; Mallard, Frédéric

2008-02-01

Clinical diagnostics is one of the most promising applications for microfluidic lab-on-a-chip or lab-on-card systems. DNA chips, which provide multiparametric data, are privileged tools for genomic analysis. However, automation of molecular biology protocol and use of these DNA chips in fully integrated systems remains a great challenge. Simplicity of chip and/or card/instrument interfaces is amongst the most critical issues to be addressed. Indeed, current detection systems for DNA chip reading are often complex, expensive, bulky and even limited in terms of sensitivity or accuracy. Furthermore, for liquid handling in the lab-on-cards, many devices use complex and bulky systems, either to directly manipulate fluids, or to ensure pneumatic or mechanical control of integrated valves. All these drawbacks prevent or limit the use of DNA-chip-based integrated systems, for point-of-care testing or as a routine diagnostics tool. We present here a DNA-chip-based protocol integration on a plastic card for clinical diagnostics applications including: (1) an opto-electronic DNA-chip, (2) fluid handling using electrically activated embedded pyrotechnic microvalves with closing/opening functions. We demonstrate both fluidic and electric packaging of the optoelectronic DNA chip without major alteration of its electronical and biological functionalities, and fluid control using novel electrically activable pyrotechnic microvalves. Finally, we suggest a complete design of a card dedicated to automation of a complex biological protocol with a fully electrical fluid handling and DNA chip reading.

High Thermal Conductivity Materials

CERN Document Server

Shinde, Subhash L

2006-01-01

Thermal management has become a ‘hot’ field in recent years due to a need to obtain high performance levels in many devices used in such diverse areas as space science, mainframe and desktop computers, optoelectronics and even Formula One racing cars! Thermal solutions require not just taking care of very high thermal flux, but also ‘hot spots’, where the flux densities can exceed 200 W/cm2. High thermal conductivity materials play an important role in addressing thermal management issues. This volume provides readers a basic understanding of the thermal conduction mechanisms in these materials and discusses how the thermal conductivity may be related to their crystal structures as well as microstructures developed as a result of their processing history. The techniques for accurate measurement of these properties on large as well as small scales have been reviewed. Detailed information on the thermal conductivity of diverse materials including aluminum nitride (AlN), silicon carbide (SiC), diamond, a...

An optoelectronic integrated device including a laser and its driving circuit

Energy Technology Data Exchange (ETDEWEB)

Matsueda, H.; Nakano, H.; Tanaka, T.P.

1984-10-01

A monolithic optoelectronic integrated circuit (OEIC) including a laser diode, photomonitor and driving and detecting circuits has been fabricated on a semi-insulating GaAs substrate. The OEIC has a horizontal integrating structure which is suitable for realising high-density multifunctional devices. The fabricating process and the static and dynamic characteristics of the optical and electronic elements are described. The preliminary results of the co-operative operation of the laser and its driving circuit are also presented.

Seeing smells: development of an optoelectronic nose

Directory of Open Access Journals (Sweden)

Kenneth S. Suslick

2007-06-01

Full Text Available The development of an array of chemically-responsive dyes on a porous membrane and in its use as a general sensor for odors and volatile organic compounds (VOCs is reviewed. These colorimetric sensor arrays (CSA act as an "optoelectronic nose" by using an array of multiple dyes whose color changes are based on the full range of intermolecular interactions. The CSA is digitally imaged before and after exposure and the resulting difference map provides a digital fingerprint for any VOC or mixture of odorants. The result is an enormous increase in discriminatory power among odorants compared to prior electronic nose technologies. For the detection of biologically important analytes, including amines, carboxylic acids, and thiols, high sensitivities (ppbv have been demonstrated. The array is essentially non-responsive to changes in humidity due to the hydrophobicity of the dyes and membrane.

Electrochemistry and Spectroelectrochemistry of Lead Halide Perovskite Films: Materials Science Aspects and Boundary Conditions

KAUST Repository

Samu, Gergely F.; Scheidt, Rebecca A; Kamat, Prashant V.; Janá ky, Csaba

2017-01-01

The unique optoelectronic properties of lead halide perovskites have triggered a new wave of excitement in materials chemistry during the past five years. Electrochemistry, spectroelectrochemistry, and photoelectrochemistry could be viable tools both for analyzing the optoelectronic features of these materials and to assemble their hybrid architectures (e.g., solar cells). At the same time, the instability of these materials limits the pool of solvents and electrolytes that can be employed in such experiments. The focus of our study is to establish a stability window for electrochemical tests for all-inorganic CsPbBr3 and hybrid organic-inorganic MaPbI3 perovskites. In addition, we aimed to understand the reduction and oxidation events that occur and to assess the damage done during these processes at extreme electrochemical conditions. In this vein, we demonstrated the chemical, structural, and morphological changes of the films in both reductive and oxidative environments. Taking all these results together as a whole, we propose a set of boundary conditions and protocols for how electrochemical experiments with lead halide perovskites should be carried out and interpreted. We believe that the presented results will contribute to the understanding of the electrochemical response of these materials and lead to a standardization of results in the literature so that easier comparisons can be made.

Electrochemistry and Spectroelectrochemistry of Lead Halide Perovskite Films: Materials Science Aspects and Boundary Conditions.

Science.gov (United States)

Samu, Gergely F; Scheidt, Rebecca A; Kamat, Prashant V; Janáky, Csaba

2018-02-13

The unique optoelectronic properties of lead halide perovskites have triggered a new wave of excitement in materials chemistry during the past five years. Electrochemistry, spectroelectrochemistry, and photoelectrochemistry could be viable tools both for analyzing the optoelectronic features of these materials and for assembling them into hybrid architectures (e.g., solar cells). At the same time, the instability of these materials limits the pool of solvents and electrolytes that can be employed in such experiments. The focus of our study is to establish a stability window for electrochemical tests for all-inorganic CsPbBr 3 and hybrid organic-inorganic MAPbI 3 perovskites. In addition, we aimed to understand the reduction and oxidation events that occur and to assess the damage done during these processes at extreme electrochemical conditions. In this vein, we demonstrated the chemical, structural, and morphological changes of the films in both reductive and oxidative environments. Taking all these results together as a whole, we propose a set of boundary conditions and protocols for how electrochemical experiments with lead halide perovskites should be carried out and interpreted. The presented results will contribute to the understanding of the electrochemical response of these materials and lead to a standardization of results in the literature so that comparisons can more easily be made.

Electrochemistry and Spectroelectrochemistry of Lead Halide Perovskite Films: Materials Science Aspects and Boundary Conditions

KAUST Repository

Samu, Gergely F.

2017-12-06

The unique optoelectronic properties of lead halide perovskites have triggered a new wave of excitement in materials chemistry during the past five years. Electrochemistry, spectroelectrochemistry, and photoelectrochemistry could be viable tools both for analyzing the optoelectronic features of these materials and to assemble their hybrid architectures (e.g., solar cells). At the same time, the instability of these materials limits the pool of solvents and electrolytes that can be employed in such experiments. The focus of our study is to establish a stability window for electrochemical tests for all-inorganic CsPbBr3 and hybrid organic-inorganic MaPbI3 perovskites. In addition, we aimed to understand the reduction and oxidation events that occur and to assess the damage done during these processes at extreme electrochemical conditions. In this vein, we demonstrated the chemical, structural, and morphological changes of the films in both reductive and oxidative environments. Taking all these results together as a whole, we propose a set of boundary conditions and protocols for how electrochemical experiments with lead halide perovskites should be carried out and interpreted. We believe that the presented results will contribute to the understanding of the electrochemical response of these materials and lead to a standardization of results in the literature so that easier comparisons can be made.

Electrochemistry and Spectroelectrochemistry of Lead Halide Perovskite Films: Materials Science Aspects and Boundary Conditions

Science.gov (United States)

2017-01-01

The unique optoelectronic properties of lead halide perovskites have triggered a new wave of excitement in materials chemistry during the past five years. Electrochemistry, spectroelectrochemistry, and photoelectrochemistry could be viable tools both for analyzing the optoelectronic features of these materials and for assembling them into hybrid architectures (e.g., solar cells). At the same time, the instability of these materials limits the pool of solvents and electrolytes that can be employed in such experiments. The focus of our study is to establish a stability window for electrochemical tests for all-inorganic CsPbBr3 and hybrid organic–inorganic MAPbI3 perovskites. In addition, we aimed to understand the reduction and oxidation events that occur and to assess the damage done during these processes at extreme electrochemical conditions. In this vein, we demonstrated the chemical, structural, and morphological changes of the films in both reductive and oxidative environments. Taking all these results together as a whole, we propose a set of boundary conditions and protocols for how electrochemical experiments with lead halide perovskites should be carried out and interpreted. The presented results will contribute to the understanding of the electrochemical response of these materials and lead to a standardization of results in the literature so that comparisons can more easily be made. PMID:29503507

Cathode Lens Mode of the SEM in Materials Science Applications

Czech Academy of Sciences Publication Activity Database

Frank, Luděk; Müllerová, Ilona; Matsuda, K.; Ikeno, S.

2007-01-01

Roč. 48, č. 5 (2007), s. 944-948 ISSN 1345-9678 R&D Projects: GA ČR GA102/05/2327; GA ČR GA202/04/0281 Institutional research plan: CEZ:AV0Z20650511 Keywords : electron microscopy of materials * scanning electron microscopy * low energy electron microscopy * cathode lens Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.018, year: 2007

New developments in photon and materials research

CERN Document Server

2013-01-01

This book presents the most recent updates in the field of photon and optical materials research. It is devoted to various interdisciplinary subjects such as fundamental photon physics, bio and medical photon physics, ultrafast non-linear optics, quasiparticle excitation and spectroscopy, coherent mid-infrared (IR) light sources, functional optoelectronic materials and optical fibres, and quantum nano-structured devices for various important technological applications. It contains 19 authoritative peer-reviewed chapters regarding experimental and theoretical research in these fields, contributed by young scientists and engineers (assistant or associate professor level) along with well-established experts. The response of materials to electromagnetic fields, namely light-matter interaction, has been of special concern in fundamental optical sciences. The ability to fabricate and/or engineer new materials and structures is giving rise to revolutionary changes in the field, which also includes soft condensed mat...

Proceedings of the second national seminar on new materials research and nanotechnology

International Nuclear Information System (INIS)

Joseph John, N.

2013-01-01

The contents of the presentations cover new materials, advanced materials, biomaterials, carbon nanomaterials, computational material science, diamond and diamond related materials, electronic materials, ferroelectric materials, fiber optics, fluorescent materials, functional materials, inorganic materials, lasers materials processing, laser and plasma technology, luminescence materials, magnetic and superconducting materials, materials for defence applications, mesoporous materials, materials for solar energy and energy storing devices, NLO materials, organic materials/electronics, photonic materials, piezoelectric materials, semiconductor materials, smart materials, nanomaterials and composites, nanoelectronics and spintronics, environment and nanotechnology, nano environmental devices, nano fluids, nanobiotechnology, nanomedicine, nanomagnetism, nanopharmacy, sensors, nano sensors/actuatoes, nanotechnology for hill area development, simulation and modeling of nanodevices, crystals, crystal growth, crystal growth methods, characterization techniques, crystal defects, liquid crystals, optoelectronic crystals, polymers, polymer composites, nano polymers, spectroscopy, thin films, deposition, characterization, applications and ultrasonics. Papers relevant to INIS are indexed separately. (author)

Triarylborane-Based Materials for OLED Applications

Directory of Open Access Journals (Sweden)

Gulsen Turkoglu

2017-09-01

Full Text Available Multidisciplinary research on organic fluorescent molecules has been attracting great interest owing to their potential applications in biomedical and material sciences. In recent years, electron deficient systems have been increasingly incorporated into fluorescent materials. Triarylboranes with the empty p orbital of their boron centres are electron deficient and can be used as strong electron acceptors in conjugated organic fluorescent materials. Moreover, their applications in optoelectronic devices, energy harvesting materials and anion sensing, due to their natural Lewis acidity and remarkable solid-state fluorescence properties, have also been investigated. Furthermore, fluorescent triarylborane-based materials have been commonly utilized as emitters and electron transporters in organic light emitting diode (OLED applications. In this review, triarylborane-based small molecules and polymers will be surveyed, covering their structure-property relationships, intramolecular charge transfer properties and solid-state fluorescence quantum yields as functional emissive materials in OLEDs. Also, the importance of the boron atom in triarylborane compounds is emphasized to address the key issues of both fluorescent emitters and their host materials for the construction of high-performance OLEDs.

Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

KAUST Repository

Amin, B.; Ahmad, Iftikhar; Maqbool, M.; Goumri-Said, S.; Ahmad, R.

2011-01-01

A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

KAUST Repository

Amin, B.

2011-01-19

A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

KAUST Repository

Wan, Shanhong

2015-01-01

A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

Investigation of Electronic and Opto-Electronic Properties of Two-Dimensional (2D) Layers of Copper Indium Selenide Field Effect Transistors

Science.gov (United States)

Patil, Prasanna Dnyaneshwar

Investigations performed in order to understand the electronic and optoelectronic properties of field effect transistors based on few layers of 2D Copper Indium Selenide (CuIn7Se11) are reported. In general, field effect transistors (FETs), electric double layer field effect transistors (EDL-FETs), and photodetectors are crucial part of several electronics based applications such as tele-communication, bio-sensing, and opto-electronic industry. After the discovery of graphene, several 2D semiconductor materials like TMDs (MoS2, WS2, and MoSe2 etc.), group III-VI materials (InSe, GaSe, and SnS2 etc.) are being studied rigorously in order to develop them as components in next generation FETs. Traditionally, thin films of ternary system of Copper Indium Selenide have been extensively studied and used in optoelectronics industry as photoactive component in solar cells. Thus, it is expected that atomically thin 2D layered structure of Copper Indium Selenide can have optical properties that could potentially be more advantageous than its thin film counterpart and could find use for developing next generation nano devices with utility in opto/nano electronics. Field effect transistors were fabricated using few-layers of CuIn7Se11 flakes, which were mechanically exfoliated from bulk crystals grown using chemical vapor transport technique. Our FET transport characterization measurements indicate n-type behavior with electron field effect mobility microFE ≈ 36 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. We found that in such back gated field effect transistor an on/off ratio of 104 and a subthreshold swing ≈ 1 V/dec can be obtained. Our investigations further indicate that Electronic performance of these materials can be increased significantly when gated from top using an ionic liquid electrolyte [1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)]. We found that electron field effect mobility microFE can be increased from

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

Science.gov (United States)

Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

2017-12-04

High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

Optoelectronic Properties of Van Der Waals Hybrid Structures: Fullerenes on Graphene Nanoribbons.

Science.gov (United States)

Correa, Julián David; Orellana, Pedro Alejandro; Pacheco, Mónica

2017-03-20

The search for new optical materials capable of absorbing light in the frequency range from visible to near infrared is of great importance for applications in optoelectronic devices. In this paper, we report a theoretical study of the electronic and optical properties of hybrid structures composed of fullerenes adsorbed on graphene and on graphene nanoribbons. The calculations are performed in the framework of the density functional theory including the van der Waals dispersive interactions. We found that the adsorption of the C 60 fullerenes on a graphene layer does not modify its low energy states, but it has strong consequences for its optical spectrum, introducing new absorption peaks in the visible energy region. The optical absorption of fullerenes and graphene nanoribbon composites shows a strong dependence on photon polarization and geometrical characteristics of the hybrid systems, covering a broad range of energies. We show that an external electric field across the nanoribbon edges can be used to tune different optical transitions coming from nanoribbon-fullerene hybridized states, which yields a very rich electro-absorption spectrum for longitudinally polarized photons. We have carried out a qualitative analysis on the potential of these hybrids as possible donor-acceptor systems in photovoltaic cells.

Optoelectronic Properties of Van Der Waals Hybrid Structures: Fullerenes on Graphene Nanoribbons

Directory of Open Access Journals (Sweden)

Julián David Correa

2017-03-01

Full Text Available The search for new optical materials capable of absorbing light in the frequency range from visible to near infrared is of great importance for applications in optoelectronic devices. In this paper, we report a theoretical study of the electronic and optical properties of hybrid structures composed of fullerenes adsorbed on graphene and on graphene nanoribbons. The calculations are performed in the framework of the density functional theory including the van der Waals dispersive interactions. We found that the adsorption of the C 60 fullerenes on a graphene layer does not modify its low energy states, but it has strong consequences for its optical spectrum, introducing new absorption peaks in the visible energy region. The optical absorption of fullerenes and graphene nanoribbon composites shows a strong dependence on photon polarization and geometrical characteristics of the hybrid systems, covering a broad range of energies. We show that an external electric field across the nanoribbon edges can be used to tune different optical transitions coming from nanoribbon–fullerene hybridized states, which yields a very rich electro-absorption spectrum for longitudinally polarized photons. We have carried out a qualitative analysis on the potential of these hybrids as possible donor-acceptor systems in photovoltaic cells.

Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis

International Nuclear Information System (INIS)

Scopece, Daniele; Montalenti, Francesco; Bonera, Emiliano; Bollani, Monica; Chrastina, Daniel

2014-01-01

Germanium is known to become a direct band gap material when subject to a biaxial tensile strain of 2% (Vogl et al 1993 Phys. Scr. T49B 476) or uniaxial tensile strain of 4% (Aldaghri et al 2012 J. Appl. Phys. 111 053106). This makes it appealing for the integration of optoelectronics into current CMOS technology. It is known that the induced strain is highly dependent on the geometry and composition of the whole system (stressors and substrate), leaving a large number of variables to the experimenters willing to realize this transition and just a trial-and-error procedure. The study in this paper aims at reducing this freedom. We adopt a finite element approach to systematically study the elastic strain induced by different configurations of lithographically-created SiGe nanostructures on a Ge substrate, by focusing on their composition and geometries. We numerically investigate the role played by the Ge substrate by comparing the strain induced on a bulk or on a suspended membrane. These results and their interpretation can provide the community starting guidelines to choose the appropriate subset of parameters to achieve the desired strain. A case of a very large optically active area of a Ge membrane is reported. (paper)

Battery-free, stretchable optoelectronic systems for wireless optical characterization of the skin.

Science.gov (United States)

Kim, Jeonghyun; Salvatore, Giovanni A; Araki, Hitoshi; Chiarelli, Antonio M; Xie, Zhaoqian; Banks, Anthony; Sheng, Xing; Liu, Yuhao; Lee, Jung Woo; Jang, Kyung-In; Heo, Seung Yun; Cho, Kyoungyeon; Luo, Hongying; Zimmerman, Benjamin; Kim, Joonhee; Yan, Lingqing; Feng, Xue; Xu, Sheng; Fabiani, Monica; Gratton, Gabriele; Huang, Yonggang; Paik, Ungyu; Rogers, John A

2016-08-01

Recent advances in materials, mechanics, and electronic device design are rapidly establishing the foundations for health monitoring technologies that have "skin-like" properties, with options in chronic (weeks) integration with the epidermis. The resulting capabilities in physiological sensing greatly exceed those possible with conventional hard electronic systems, such as those found in wrist-mounted wearables, because of the intimate skin interface. However, most examples of such emerging classes of devices require batteries and/or hard-wired connections to enable operation. The work reported here introduces active optoelectronic systems that function without batteries and in an entirely wireless mode, with examples in thin, stretchable platforms designed for multiwavelength optical characterization of the skin. Magnetic inductive coupling and near-field communication (NFC) schemes deliver power to multicolored light-emitting diodes and extract digital data from integrated photodetectors in ways that are compatible with standard NFC-enabled platforms, such as smartphones and tablet computers. Examples in the monitoring of heart rate and temporal dynamics of arterial blood flow, in quantifying tissue oxygenation and ultraviolet dosimetry, and in performing four-color spectroscopic evaluation of the skin demonstrate the versatility of these concepts. The results have potential relevance in both hospital care and at-home diagnostics.

A hybrid lightwave transmission system based on light injection/optoelectronic feedback techniques and fiber-VLLC integration

International Nuclear Information System (INIS)

Tsai, Wen-Shing; Lu, Hai-Han; Li, Chung-Yi; Chen, Bo-Rui; Lin, Hung-Hsien; Lin, Dai-Hua

2016-01-01

A hybrid lightwave transmission system based on light injection/optoelectronic feedback techniques and fiber-visible laser light communication (VLLC) integration is proposed and experimentally demonstrated. To be the first one of its kind in employing light injection and optoelectronic feedback techniques in a fiber-VLLC integration lightwave transmission system, the light is successfully directly modulated with Community Access Television (CATV), 16-QAM, and 16-QAM-OFDM signals. Over a 40 km SMF and a 10 m free-space VLLC transport, good performances of carrier-to-noise ratio (CNR)/composite second-order (CSO)/composite triple-beat (CTB)/bit error rate (BER) are achieved for CATV/16-QAM/16-QAM-OFDM signals transmission. Such a hybrid lightwave transmission system would be very useful since it can provide broadband integrated services including CATV, Internet, and telecommunication services over both distribute fiber and in-building networks. (letter)

Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications

Science.gov (United States)

Romeira, Bruno; Figueiredo, José M. L.; Javaloyes, Julien

2017-11-01

With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

New materials and structures for photovoltaics

Science.gov (United States)

Zunger, Alex; Wagner, S.; Petroff, P. M.

1993-01-01

Despite the fact that over the years crystal chemists have discovered numerous semiconducting substances, and that modern epitaxial growth techniques are able to produce many novel atomic-scale architectures, current electronic and opto-electronic technologies are based but on a handful of ˜10 traditional semiconductor core materials. This paper surveys a number of yet-unexploited classes of semiconductors, pointing to the much-needed research in screening, growing, and characterizing promising members of these classes. In light of the unmanageably large number of a-priori possibilities, we emphasize the role that structural chemistry and modern computer-aided design must play in screening potentially important candidates. The basic classes of materials discussed here include nontraditional alloys, such as non-isovalent and heterostructural semiconductors, materials at reduced dimensionality, including superlattices, zeolite-caged nanostructures and organic semiconductors, spontaneously ordered alloys, interstitial semiconductors, filled tetrahedral structures, ordered vacancy compounds, and compounds based on d and f electron elements. A collaborative effort among material predictor, material grower, and material characterizer holds the promise for a successful identification of new and exciting systems.

Recent trend in graphene for optoelectronics

International Nuclear Information System (INIS)

Chen, Yu-Bin; Liu, John S.; Lin Pang

2013-01-01

This study analyzes the scientific knowledge diffusion paths of graphene for optoelectronics (GFO), where graphene offers wide applications due to its thinness, high conductivity, excellent transparency, chemical stability, robustness, and flexibility. Our investigation is based on the main path analysis which establishes the citation links among the literature data in order to trace the significant sequence of knowledge development in this emerging field. We identify the main development paths of GFO up to the year 2012, along which a series of influential papers in this field are identified. The main path graph shows that knowledge diffusion occurs in key subareas, including reduced graphene oxide, chemical vapor deposition, and exfoliation techniques, which are developed for the preparation and applications of GFO. The applications cover solar cells, laser devices, sensing devices, and LCD. In addition, the main theme of GFO research evolves in sequence from small-graphene-sample preparation, to large-scale film growth, and onto prototype device fabrication. This evolution reflects a strong industrial demand for a new transparent–conductive film technology.

Understanding the Slow Transient Optoelectronic Response of Hybrid Organic-Inorganic Halide Perovskites

Science.gov (United States)

Jacobs, Daniel Louis

Hybrid organic-inorganic halide perovskites, particularly methylammonium lead triiodide (MAPbI3), have emerged within the past decade as an exciting class of photovoltaic materials. In less than ten years, MAPbI3-based photovoltaic devices have seen unprecedented performance growth, with photoconversion efficiency increasing from 3% to over 22%, making it competitive with traditional high-efficiency solar cells. Furthermore, the fabrication of MAPbI3 devices utilize low-temperature solution processing, which could facilitate ultra low cost manufacturing. However, MAPbI3 suffers from significant instabilities under working conditions that have limited their applications outside of the laboratory. The instability of the MAPbI3 material can be generalized as a complex, slow transient optoelectronic response (STOR). The mechanism of the generalized STOR is dependent on the native defects of MAPbI3, but detailed understanding of the material defect properties is complicated by the complex ionic bonding of MAPbI3. Furthermore, characterization of the intrinsic material's response is complicated by the diverse approach to material processing and device architecture across laboratories around the world. In order to understand and mitigate the significant problems of MAPbI3 devices, a new approach focused on the material response, rather than the full device response, must be pursued. This dissertation highlights the work to analyze and mitigate the STOR intrinsic to MAPbI3. An experimental platform was developed based on lateral interdigitated electrode (IDE) arrays capable of monitoring the current and photoluminescence response simultaneously. By correlating the dynamics of the current and photoluminescence (PL) responses, both charge trapping and ion migration mechanisms were identified to contribute to the STOR. Next, a novel fabrication technique is introduced that is capable of reliably depositing MAPbI3 thin films with grain sizes at least an order of magnitude

Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices

Science.gov (United States)

Raeis-Hosseini, Niloufar; Rho, Junsuk

2017-01-01

Integration of phase-change materials (PCMs) into electrical/optical circuits has initiated extensive innovation for applications of metamaterials (MMs) including rewritable optical data storage, metasurfaces, and optoelectronic devices. PCMs have been studied deeply due to their reversible phase transition, high endurance, switching speed, and data retention. Germanium-antimony-tellurium (GST) is a PCM that has amorphous and crystalline phases with distinct properties, is bistable and nonvolatile, and undergoes a reliable and reproducible phase transition in response to an optical or electrical stimulus; GST may therefore have applications in tunable photonic devices and optoelectronic circuits. In this progress article, we outline recent studies of GST and discuss its advantages and possible applications in reconfigurable metadevices. We also discuss outlooks for integration of GST in active nanophotonic metadevices. PMID:28878196

Reproducibility and day time bias correction of optoelectronic leg volumetry: a prospective cohort study.

Science.gov (United States)

Engelberger, Rolf P; Blazek, Claudia; Amsler, Felix; Keo, Hong H; Baumann, Frédéric; Blättler, Werner; Baumgartner, Iris; Willenberg, Torsten

2011-10-05

Leg edema is a common manifestation of various underlying pathologies. Reliable measurement tools are required to quantify edema and monitor therapeutic interventions. Aim of the present work was to investigate the reproducibility of optoelectronic leg volumetry over 3 weeks' time period and to eliminate daytime related within-individual variability. Optoelectronic leg volumetry was performed in 63 hairdressers (mean age 45 ± 16 years, 85.7% female) in standing position twice within a minute for each leg and repeated after 3 weeks. Both lower leg (legBD) and whole limb (limbBF) volumetry were analysed. Reproducibility was expressed as analytical and within-individual coefficients of variance (CVA, CVW), and as intra-class correlation coefficients (ICC). A total of 492 leg volume measurements were analysed. Both legBD and limbBF volumetry were highly reproducible with CVA of 0.5% and 0.7%, respectively. Within-individual reproducibility of legBD and limbBF volumetry over a three weeks' period was high (CVW 1.3% for both; ICC 0.99 for both). At both visits, the second measurement revealed a significantly higher volume compared to the first measurement with a mean increase of 7.3 ml ± 14.1 (0.33% ± 0.58%) for legBD and 30.1 ml ± 48.5 ml (0.52% ± 0.79%) for limbBF volume. A significant linear correlation between absolute and relative leg volume differences and the difference of exact day time of measurement between the two study visits was found (P correction formula permitted further improvement of CVW. Leg volume changes can be reliably assessed by optoelectronic leg volumetry at a single time point and over a 3 weeks' time period. However, volumetry results are biased by orthostatic and daytime-related volume changes. The bias for day-time related volume changes can be minimized by a time-correction formula.

Reproducibility and day time bias correction of optoelectronic leg volumetry: a prospective cohort study

Directory of Open Access Journals (Sweden)

Baumgartner Iris

2011-10-01

Full Text Available Abstract Background Leg edema is a common manifestation of various underlying pathologies. Reliable measurement tools are required to quantify edema and monitor therapeutic interventions. Aim of the present work was to investigate the reproducibility of optoelectronic leg volumetry over 3 weeks' time period and to eliminate daytime related within-individual variability. Methods Optoelectronic leg volumetry was performed in 63 hairdressers (mean age 45 ± 16 years, 85.7% female in standing position twice within a minute for each leg and repeated after 3 weeks. Both lower leg (legBD and whole limb (limbBF volumetry were analysed. Reproducibility was expressed as analytical and within-individual coefficients of variance (CVA, CVW, and as intra-class correlation coefficients (ICC. Results A total of 492 leg volume measurements were analysed. Both legBD and limbBF volumetry were highly reproducible with CVA of 0.5% and 0.7%, respectively. Within-individual reproducibility of legBD and limbBF volumetry over a three weeks' period was high (CVW 1.3% for both; ICC 0.99 for both. At both visits, the second measurement revealed a significantly higher volume compared to the first measurement with a mean increase of 7.3 ml ± 14.1 (0.33% ± 0.58% for legBD and 30.1 ml ± 48.5 ml (0.52% ± 0.79% for limbBF volume. A significant linear correlation between absolute and relative leg volume differences and the difference of exact day time of measurement between the two study visits was found (P W. Conclusions Leg volume changes can be reliably assessed by optoelectronic leg volumetry at a single time point and over a 3 weeks' time period. However, volumetry results are biased by orthostatic and daytime-related volume changes. The bias for day-time related volume changes can be minimized by a time-correction formula.

Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

Science.gov (United States)

Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

2017-12-01

The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

Ultrafast Phase Comparator for Phase-Locked Loop-Based Optoelectronic Clock Recovery Systems

DEFF Research Database (Denmark)

Gomez-Agis, F.; Oxenløwe, Leif Katsuo; Kurimura, S.

2009-01-01

The authors report on a novel application of a chi((2)) nonlinear optical device as an ultrafast phase comparator, an essential element that allows an optoelectronic phase-locked loop to perform clock recovery of ultrahigh-speed optical time-division multiplexed (OTDM) signals. Particular interest...... is devoted to a quasi-phase-matching adhered-ridge-waveguide periodically poled lithium niobate (PPLN) device, which shows a sufficient high temporal resolution to resolve a 640 Gbits OTDM signal....

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

International Nuclear Information System (INIS)

Jiang Wei; Gao Hong; Xu Ling-Ling; Ma Jia-Ning; Zhang E; Wei Ping; Lin Jia-Qi

2011-01-01

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ = 505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The relationship between past caries experience and tooth color determined by an opto-electronic method.

Science.gov (United States)

Kerosuo, E; Kolehmainen, L

1982-01-01

The susceptibility of a tooth to dental caries has been proposed to depend on tooth color. So far there has, however, been no reliable method for tooth color determination. The aims of this study were to evaluate the reliability of an opto-electronic method and to examine the relationship between tooth color and past caries experience. The color of upper right central incisors of 64 school-children was determined using an opto-electronic tri-stimulus color comparator. The intra- and interexaminer reliability of the method was evaluated in vitro and in vivo being 85% and 83%, respectively. To assess the past caries experience the DMFS-index was calculated. Oral hygiene and dietary habits were also assessed. No significant difference in DMFS scores was obtained between the 'white teeth' group and the 'yellow teeth' group. The conclusion is, that the practical importance of possible colorrelated differences in caries resistance is negligible due to the multifaceted nature of dental caries.

DARPA Perspectives on Multifunctional Materials/Power and Energy

Science.gov (United States)

2012-08-09

In-situ growth of aligned CNTs Electronics Graphene /Metal oxide CMOS interconnects Erosion Diamond/ZnS LWIR missile domes Tribology TiN/Carbon...application Optoelectronics InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel...InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel Tribology TiN/High speed

Granulometric composition study of mineral resources using opto-electronic devices and Elsieve software system

Directory of Open Access Journals (Sweden)

Kaminski Stanislaw

2016-01-01

Full Text Available The use of mechanical sieves has a great impact on measurement results because occurrence of anisometric particles causes undercounting the average size. Such errors can be avoided by using opto-electronic measuring devices that enable measurement of particles from 10 μm up to a few dozen millimetres in size. The results of measurement of each particle size fraction are summed up proportionally to its weight with the use of Elsieve software system and for every type of material particle-size distribution can be obtained. The software allows further statistical interpretation of the results. Beam of infrared radiation identifies size of particles and counts them precisely. Every particle is represented by an electronic impulse proportional to its size. Measurement of particles in aqueous suspension that replaces the hydrometer method can be carried out by using the IPS L analyser (range from 0.2 to 600 μm. The IPS UA analyser (range from 0.5 to 2000 μm is designed for measurement in the air. An ultrasonic adapter enables performing measurements of moist and aggregated particles from 0.5 to 1000 μm. The construction and software system allow to determine second dimension of the particle, its shape coefficient and specific surface area. The AWK 3D analyser (range from 0.2 to 31.5 mm is devoted to measurement of various powdery materials with subsequent determination of particle shape. The AWK B analyser (range from 1 to 130 mm measures materials of thick granulation and shape of the grains. The presented method of measurement repeatedly accelerates and facilitates study of granulometric composition.

International Conference on Recent Trends in Materials and Devices

CERN Document Server

Rattan, Sunita; Verma, Abhishek

2017-01-01

This book presents the proceedings of the International Conference on Recent Trends in Materials and Devices, which was conceived as a major contribution to large-scale efforts to foster Indian research and development in the field in close collaboration with the community of non-resident Indian researchers from all over the world. The research articles collected in this volume - selected from among the submissions for their intrinsic quality and originality, as well as for their potential value for further collaborations - document and report on a wide range of recent and significant results for various applications and scientific developments in the areas of Materials and Devices. The technical sessions covered include photovoltaics and energy storage, semiconductor materials and devices, sensors, smart and polymeric materials, optoelectronics, nanotechnology and nanomaterials, MEMS and NEMS, as well as emerging technologies.

Surface structure, optoelectronic properties and charge transport in ZnO nanocrystal/MDMO-PPV multilayer films.

Science.gov (United States)

Lian, Qing; Chen, Mu; Mokhtar, Muhamad Z; Wu, Shanglin; Zhu, Mingning; Whittaker, Eric; O'Brien, Paul; Saunders, Brian R

2018-05-07

Blends of semiconducting nanocrystals and conjugated polymers continue to attract major research interest because of their potential applications in optoelectronic devices, such as solar cells, photodetectors and light-emitting diodes. In this study we investigate the surface structure, morphological and optoelectronic properties of multilayer films constructed from ZnO nanocrystals (NCs) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV). The effects of layer number and ZnO concentration (C ZnO ) used on the multilayer film properties are investigated. An optimised solvent blend enabled well-controlled layers to be sequentially spin coated and the construction of multilayer films containing six ZnO NC (Z) and MDMO-PPV (M) layers (denoted as (ZM) 6 ). Contact angle data showed a strong dependence on C ZnO and indicated distinct differences in the coverage of MDMO-PPV by the ZnO NCs. UV-visible spectroscopy showed that the MDMO-PPV absorption increased linearly with the number of layers in the films and demonstrates highly tuneable light absorption. Photoluminescence spectra showed reversible quenching as well as a surprising red-shift of the MDMO-PPV emission peak. Solar cells were constructed to probe vertical photo-generated charge transport. The measurements showed that (ZM) 6 devices prepared using C ZnO = 14.0 mg mL -1 had a remarkably high open circuit voltage of ∼800 mV. The device power conversion efficiency was similar to that of a control bilayer device prepared using a much thicker MDMO-PPV layer. The results of this study provide insight into the structure-optoelectronic property relationships of new semiconducting multilayer films which should also apply to other semiconducting NC/polymer combinations.

Metalorganic chemical vapor deposition and characterization of ZnO materials

Science.gov (United States)

Sun, Shangzu; Tompa, Gary S.; Hoerman, Brent; Look, David C.; Claflin, Bruce B.; Rice, Catherine E.; Masaun, Puneet

2006-04-01

Zinc oxide is attracting growing interest for potential applications in electronics, optoelectronics, photonics, and chemical and biochemical sensing, among other applications. We report herein our efforts in the growth and characterization of p- and n-type ZnO materials by metalorganic chemical vapor deposition (MOCVD), focusing on recent nitrogen-doped films grown using diethyl zinc as the zinc precursor and nitric oxide (NO) as the dopant. Characterization results, including resistivity, Hall measurements, photoluminescence, and SIMS, are reported and discussed. Electrical behavior was observed to be dependent on illumination, atmosphere, and heat treatment, especially for p-type material.

A 2-10 GHz GaAs MMIC opto-electronic phase detector for optical microwave signal generators

DEFF Research Database (Denmark)

Bruun, Marlene; Gliese, Ulrik Bo; Petersen, Anders Kongstad

1994-01-01

Optical transmission of microwave signals becomes increasingly important. Techniques using beat between optical carriers of semiconductor lasers are promising if efficient optical phase locked loops are realized. A highly efficient GaAs MMIC optoelectronic phase detector for a 2-10 GHz OPLL...

Proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices

International Nuclear Information System (INIS)

Singh, R.; Messick, L.J.

1989-01-01

This book contains the proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices. Topics covered include: Growth and characterization of bulk and epitaxial films, Passivation technology, Processing technology, High speed optoelectronic integrated circuits, and Solar cells

Implantable optoelectronic probes for in vivo optogenetics

Science.gov (United States)

Iseri, Ege; Kuzum, Duygu

2017-06-01

More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

Radiation-hard Optoelectronics for LHC detector upgrades.

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00375195; Newbold, Dave

A series of upgrades foreseen for the LHC over the next decade will allow the proton-proton collisions to reach the design center of mass energy of 14 TeV and increase the luminosity to five times (High Luminosity-LHC) the design luminosity by 2027. Radiation-tolerant high-speed optical data transmission links will continue to play an important role in the infrastructure of particle physics experiments over the next decade. A new generation of optoelectronics that meet the increased performance and radiation tolerance limits imposed by the increase in the intensity of the collisions at the interaction points are currently being developed. This thesis focuses on the development of a general purpose bi-directional 5 Gb/s radiation tolerant optical transceiver, the Versatile Transceiver (VTRx), for use by the LHC experiments over the next five years, and on exploring the radiation-tolerance of state-of-the art silicon photonics modulators for HL-LHC data transmission applications. The compliance of the VTRx ...

GaN and ZnO-based materials and devices

CERN Document Server

2012-01-01

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Polysilanes - advanced materials for optoelectronics

Czech Academy of Sciences Publication Activity Database

Nešpůrek, Stanislav; Wang, Geng; Yoshino, K.

2005-01-01

Roč. 7, č. 1 (2005), s. 223-230 ISSN 1454-4164 R&D Projects: GA MŠk ME 558; GA MŠk OC D14.30 Institutional research plan: CEZ:AV0Z40500505 Keywords : Light-induced phenomenapolysilane * electron ic structure * photoconductivity Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.138, year: 2005

Optoelectronic link for analog signals from solid state detectors in high energy physics

International Nuclear Information System (INIS)

Manfredi, P.F.; Speziali, V.

1983-01-01

An optoelectric link has been made to transmit analog signals over a long distance between the beam area and the remote-end data acquisition instrumentation in high energy experiments. The optoelectronic link is intended for silicon target applications and it is designed to work on the signals at the output of a low noise amplifier system. Its advantages over a conventional galvanic connection as well as its limitations are discussed. (orig.)

Compliant heterogeneous assemblies of micro-VCSELs as a new materials platform for integrated optoelectronics

Science.gov (United States)

Kang, Dongseok; Lee, Sung-Min; Kwong, Anthony; Yoon, Jongseung

2015-03-01

Despite many unique advantages, vertical cavity surface emitting lasers (VCSELs) have been available mostly on rigid, planar wafers over restricted areas, thereby limiting their usage for applications that can benefit from large-scale, programmable assemblies, hybrid integration with dissimilar materials and devices, or mechanically flexible constructions. Here, materials design and fabrication strategies that address these limitations of conventional VCSELs are presented. Specialized design of epitaxial materials and etching processes, together with printing-based deterministic assemblies and substrate thermal engineering, enabled defect-free release of microscale VCSELs and their device- and circuit-level implementation on non-native, flexible substrates with performance comparable to devices on the growth substrate.

ZnO nanocrystals and allied materials

CERN Document Server

Okada, Tatsuo

2014-01-01

ZnO has been the central theme of research in the past decade due to its various applications in band gap engineering, and textile and biomedical industries. In nanostructured form, it offers ample opportunities to realize tunable optical and optoelectronic properties and it was also termed as a potential material to realize room temperature ferromagnetism. This book presents 17 high-quality contributory chapters on ZnO related systems written by experts in this field. These chapters will help researchers to understand and explore the varied physical properties to envisage device applications of ZnO in thin film, heterostructure and nanostructure forms.

Combined experimental and theoretical assessments of the lattice dynamics and optoelectronics of TaON and Ta3N5

KAUST Repository

Nurlaela, Ela

2015-06-15

Presented herein is a detailed discussion of the properties of the lattice dynamic and optoelectronic properties of tantalum(V) oxynitride (TaON) and tantalum(V) nitride (Ta3N5), from experimental and theoretical standpoint. The active Raman and infra red (IR) frequencies of TaON and Ta3N5 were measured using confocal Raman and Fourier Transform Infrared spectroscopies (FTIR) and calculated using the linear response method within the density functional perturbation theory (DFPT). The detailed study leads to an exhaustive description of the spectra, including the symmetry of the vibrational modes. Electronic structures of these materials were computed using DFT within the range-separated hybrid HSE06 exchange–correlation formalism. Electronic and ionic contributions to the dielectric constant tensors of these materials were obtained from DFPT within the linear response method using the PBE functional. Furthermore, effective mass of photogenerated holes and electrons at the band edges of these compounds were computed from the electronic band structure obtained at the DFT/HSE06 level of theory. The results suggest that anisotropic nature in TaON and Ta3N5 is present in terms of dielectric constant and effective masses.

Combined experimental and theoretical assessments of the lattice dynamics and optoelectronics of TaON and Ta3N5

KAUST Repository

Nurlaela, Ela; Harb, Moussab; Del Gobbo, Silvano; Vashishta, Manish; Takanabe, Kazuhiro

2015-01-01

Presented herein is a detailed discussion of the properties of the lattice dynamic and optoelectronic properties of tantalum(V) oxynitride (TaON) and tantalum(V) nitride (Ta3N5), from experimental and theoretical standpoint. The active Raman and infra red (IR) frequencies of TaON and Ta3N5 were measured using confocal Raman and Fourier Transform Infrared spectroscopies (FTIR) and calculated using the linear response method within the density functional perturbation theory (DFPT). The detailed study leads to an exhaustive description of the spectra, including the symmetry of the vibrational modes. Electronic structures of these materials were computed using DFT within the range-separated hybrid HSE06 exchange–correlation formalism. Electronic and ionic contributions to the dielectric constant tensors of these materials were obtained from DFPT within the linear response method using the PBE functional. Furthermore, effective mass of photogenerated holes and electrons at the band edges of these compounds were computed from the electronic band structure obtained at the DFT/HSE06 level of theory. The results suggest that anisotropic nature in TaON and Ta3N5 is present in terms of dielectric constant and effective masses.

Ultrafast characterization of optoelectronic devices and systems

Science.gov (United States)

Zheng, Xuemei

The recent fast growth in high-speed electronics and optoelectronics has placed demanding requirements on testing tools. Electro-optic (EO) sampling is a well-established technique for characterization of high-speed electronic and optoelectronic devices and circuits. However, with the progress in device miniaturization, lower power consumption (smaller signal), and higher throughput (higher clock rate), EO sampling also needs to be updated, accordingly, towards better signal-to-noise ratio (SNR) and sensitivity, without speed sacrifice. In this thesis, a novel EO sampler with a single-crystal organic 4-dimethylamino-N-methy-4-stilbazolium tosylate (DAST) as the EO sensor is developed. The system exhibits sub-picosecond temporal resolution, sub-millivolt sensitivity, and a 10-fold improvement on SNR, compared with its LiTaO3 counterpart. The success is attributed to the very high EO coefficient, the very low dielectric constant, and the fast response, coming from the major contribution of the pi-electrons in DAST. With the advance of ultrafast laser technology, low-noise and compact femtosecond fiber lasers have come to maturation and become light-source options for ultrafast metrology systems. We have successfully integrated a femtosecond erbium-doped-fiber laser into an EO sampler, making the system compact and very reliable. The fact that EO sampling is essentially an impulse-response measurement process, requires integration of ultrashort (sub-picosecond) impulse generation network with the device under test. We have implemented a reliable lift-off and transfer technique in order to obtain epitaxial-quality freestanding low-temperature-grown GaAs (LT-GaAs) thin-film photo-switches, which can be integrated with many substrates. The photoresponse of our freestanding LT-GaAs devices was thoroughly characterized with the help of our EO sampler. As fast as 360 fs full-width-at-half-maximum (FWHM) and >1 V electrical pulses were obtained, with quantum efficiency

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

KAUST Repository

Alshehri, Bandar; Dogheche, Karim; Belahsene, Sofiane; Janjua, Bilal; Ramdane, Abderrahim; Patriarche, Gilles; Ng, Tien Khee; S-Ooi, Boon; Decoster, Didier; Dogheche, Elhadj

2016-01-01

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

KAUST Repository

Alshehri, Bandar

2016-06-07

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application

Science.gov (United States)

Luo, Lin-Bao; Wang, Xian-He; Xie, Chao; Li, Zhong-Jun; Lu, Rui; Yang, Xiao-Bao; Lu, Jian

2014-11-01

In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 [InlineEquation not available: see fulltext.] 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm2V-1 s-1 and hole concentration of 1.34 × 1018 cm-3, respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 102 A W-1, 3.95 × 102 and 6.38 × 1011 cm Hz1/2 W-1, respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices.

Electrical control of charged carriers and excitons in atomically thin materials

Science.gov (United States)

Wang, Ke; De Greve, Kristiaan; Jauregui, Luis A.; Sushko, Andrey; High, Alexander; Zhou, You; Scuri, Giovanni; Taniguchi, Takashi; Watanabe, Kenji; Lukin, Mikhail D.; Park, Hongkun; Kim, Philip

2018-02-01

Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1-3. The unique band structure4-7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley-spin qubits8. 2D TMDs also provide a platform for novel quantum optoelectronic devices9-11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14-16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin-valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.

Expanding Nuclear Power Programmes - Romanian experience: Master - Nuclear Materials and Technologies Educational Plan

International Nuclear Information System (INIS)

Valeca, S.; Valeca, M.

2012-01-01

The main objectives of the Master Nuclear Materials and Technologies Educational Plan are: 1. To deliver higher education and training in the following specific domains, such as: Powders Technology and Ceramic Materials, Techniques of Structural Analysis, Composite Materials, Semiconductor Materials and Components, Metals and Metallic Alloys, Optoelectronic Materials and Devices, Nuclear Materials, The Engineering of Special Nuclear Materials, 2. To train managers of the Nuclear Waste Products and Nuclear Safety, 3. To qualify in ICT Systems for Nuclear Process Guidance, 4. To qualify in Environmental Protection System at the Level of Nuclear Power Stations, 5. To train managers for Quality Assurance of Nuclear Energetic Processes, 6. To deliver higher education and training regarding the International Treatises, Conventions and Settlements in force in the field of nuclear related activities. (author)

Preparation, characterization and optoelectronic properties of nanodiamonds doped zinc oxide nanomaterials by a ball milling technique

Science.gov (United States)

Ullah, Hameed; Sohail, Muhammad; Malik, Uzma; Ali, Naveed; Bangash, Masroor Ahmad; Nawaz, Mohsan

2016-07-01

Zinc oxide (ZnO) is one of the very important metal oxides (MOs) for applications in optoelectronic devices which work in the blue and UV regions. However, to meet the challenges of obtaining ZnO nanomaterials suitable for practical applications, various modifications in physico-chemical properties are highly desirable. One of the ways adopted for altering the properties is to synthesize composite(s) of ZnO with various reinforcements. Here we report on the tuning of optoelectronic properties of ZnO upon doping by nanodiamonds (NDs) using the ball milling technique. A varying weight percent (wt.%) of NDs were ball milled for 2 h with ZnO nanoparticles prepared by a simple precipitation method. The effects of different parameters, the calcination temperature of ZnO, wt.% of NDs and mechanical milling upon the optoelectronic properties of the resulting ZnO-NDs nanocomposites have been investigated. The ZnO-NDs nanocomposites were characterized by IR spectroscopy, powder x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The UV-vis spectroscopy revealed the alteration in the bandgap energy (Eg ) of ZnO as a function of the calcination temperature of ZnO, changing the concentration of NDs, and mechanical milling of the resulting nanocomposites. The photoluminescence (PL) spectroscopy showed a decrease in the deep level emission (DLE) peaks and an increase in near-band-edge transition peaks as a result of the increasing concentration of NDs. The decrease in DLE and increase in band to band transition peaks were due to the strong interaction between the NDs and the Zn+; consequently, the Zn+ concentration decreased on the interstitial sites.

Understanding and removing surface states limiting charge transport in TiO2 nanowire arrays for enhanced optoelectronic device performance.

Science.gov (United States)

Sheng, Xia; Chen, Liping; Xu, Tao; Zhu, Kai; Feng, Xinjian

2016-03-01

Charge transport within electrode materials plays a key role in determining the optoelectronic device performance. Aligned single-crystal TiO 2 nanowire arrays offer an ideal electron transport path and are expected to have higher electron mobility. Unfortunately, their transport is found not to be superior to that in nanoparticle films. Here we show that the low electron transport in rutile TiO 2 nanowires is mainly caused by surface traps in relatively deep energy levels, which cannot be removed by conventional approaches, such as oxygen annealing treatment. Moreover, we demonstrate an effective wet-chemistry approach to minimize these trap states, leading to over 20-fold enhancement in electron diffusion coefficient and 62% improvement in solar cell performance. On the basis of our results, the potential of TiO 2 NWs can be developed and well-utilized, which is significantly important for their practical applications.

Nanoscale Surface Photovoltage Mapping of 2D Materials and Heterostructures by Illuminated Kelvin Probe Force Microscopy

KAUST Repository

Shearer, Melinda J.

2018-02-01

Nanomaterials are interesting for a variety of applications, such as optoelectronics and photovoltaics. However, they often have spatial heterogeneity, i.e. composition change or physical change in the topography or structure, which can lead to varying properties that would influence their applications. New techniques must be developed to understand and correlate spatial heterogeneity with changes in electronic properties. Here we highlight the technique of surface photovoltage-Kelvin probe force microscopy (SPV-KFM), which is a modified version of non-contact atomic force microscopy capable of imaging not only the topography and surface potential, but also the surface photovoltage on the nanoscale. We demonstrate its utility in probing monolayer WSe2-MoS2 lateral heterostructures, which form an ultrathin p-n junction promising for photovoltaic and optoelectronic applications. We show surface photovoltage maps highlighting the different photoresponse of the two material regions as a result of the effective charge separation across this junction. Additionally, we study the variations between different heterostructure flakes and emphasize the importance of controlling the synthesis and transfer of these materials to obtain consistent properties and measurements.

Nanoscale Surface Photovoltage Mapping of 2D Materials and Heterostructures by Illuminated Kelvin Probe Force Microscopy

KAUST Repository

Shearer, Melinda J.; Li, Ming-yang; Li, Lain-Jong; Jin, Song; Hamers, Robert J

2018-01-01

Nanomaterials are interesting for a variety of applications, such as optoelectronics and photovoltaics. However, they often have spatial heterogeneity, i.e. composition change or physical change in the topography or structure, which can lead to varying properties that would influence their applications. New techniques must be developed to understand and correlate spatial heterogeneity with changes in electronic properties. Here we highlight the technique of surface photovoltage-Kelvin probe force microscopy (SPV-KFM), which is a modified version of non-contact atomic force microscopy capable of imaging not only the topography and surface potential, but also the surface photovoltage on the nanoscale. We demonstrate its utility in probing monolayer WSe2-MoS2 lateral heterostructures, which form an ultrathin p-n junction promising for photovoltaic and optoelectronic applications. We show surface photovoltage maps highlighting the different photoresponse of the two material regions as a result of the effective charge separation across this junction. Additionally, we study the variations between different heterostructure flakes and emphasize the importance of controlling the synthesis and transfer of these materials to obtain consistent properties and measurements.

Electronic Materials Science

Science.gov (United States)

Irene, Eugene A.

2005-02-01

A thorough introduction to fundamental principles and applications From its beginnings in metallurgy and ceramics, materials science now encompasses such high- tech fields as microelectronics, polymers, biomaterials, and nanotechnology. Electronic Materials Science presents the fundamentals of the subject in a detailed fashion for a multidisciplinary audience. Offering a higher-level treatment than an undergraduate textbook provides, this text benefits students and practitioners not only in electronics and optical materials science, but also in additional cutting-edge fields like polymers and biomaterials. Readers with a basic understanding of physical chemistry or physics will appreciate the text's sophisticated presentation of today's materials science. Instructive derivations of important formulae, usually omitted in an introductory text, are included here. This feature offers a useful glimpse into the foundations of how the discipline understands such topics as defects, phase equilibria, and mechanical properties. Additionally, concepts such as reciprocal space, electron energy band theory, and thermodynamics enter the discussion earlier and in a more robust fashion than in other texts. Electronic Materials Science also features: An orientation towards industry and academia drawn from the author's experience in both arenas Information on applications in semiconductors, optoelectronics, photocells, and nanoelectronics Problem sets and important references throughout Flexibility for various pedagogical needs Treating the subject with more depth than any other introductory text, Electronic Materials Science prepares graduate and upper-level undergraduate students for advanced topics in the discipline and gives scientists in associated disciplines a clear review of the field and its leading technologies.

The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

International Nuclear Information System (INIS)

Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

2016-01-01

Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10"−"3 Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

A Novel Optoelectronic Device Based on Correlated Two-Dimensional Fermions

Science.gov (United States)

Dianat, Pouya

Conventional metallic contacts can be replicated by quantum two dimensional charge (of Fermion) systems (2DFS). Unlike metals, the particle concentration of these "unconventional" systems can be accurately controlled in an extensive range and by means of external electronic or optical stimuli. A 2DFS can, hence, transition from a high-density kinetic liquid into a dilute-but highly correlated-gas state, in which inter-particle Coulombic interactions are significant. Such interactions contribute negatively, by so-called exchange-correlation energies, to the overall energetics of the system, and are manifested as a series negative quantum capacitance. This dissertation investigates the capacitive performance of a class of unconventional devices based on a planar metal-semiconductor-metal structure with an embedded 2DFS. They constitute an opto-electronically controlled variable capacitor, with record breaking figures-of-merit in capacitance tuning ranges of up to 7000 and voltage sensitivities as large as 400. Internal eld manipulations by localized depletion of a dense 2DFS account for the enlarged maximum and reduced minimum capacitances. The capacitance-voltage characteristics of these devices incur an anomalous "Batman" shape capacitance enhancement (CE) of up to 200% that may be triggered optically. The CE is attributed to the release and storage of exchange-correlation energies; from the "unconventional" plate and in the dielectric, respectively. This process is enforced by density manipulation of the 2DFS by a hybrid of an external eld and light-generated carriers. Under moderate optical powers, the capacitance becomes 43 times greater than the dark value; thus a new capacitance-based photodetection method is offered. This new capacitance based photodetection method has a range of applications in optoelectronics, particularly in the next generation of photonic integrated systems.

Optoelectronic analogue signal transfer for LHC detectors, 1991

CERN Document Server

Dowell, John D; Homer, R J; Jovanovic, P; Kenyon, I; Staley, R; Webster, K; Da Via, C; Feyt, J; Nappey, P; Stefanini, G; Dwir, B; Reinhart, F K; Davies, J; Green, N; Stewart, W; Young, T; Hall, G; Akesson, T; Jarlskog, G; Kröll, S; Nickerson, R; Jaroslawski, S; CERN. Geneva. Detector Research and Development Committee

1991-01-01

We propose to study and develop opto-electronic analogue front-ends based on electro-optic intensity modulators. These devices translate the detector electrical analogue signals into optical signals which are then transferred via optical fibres to photodetector receivers at the remote readout. In comparison with conventional solutions based on copper cables, this technique offers the advantages of high speed, very low power dissipation and transmission losses, compactness and immunity to electromagnetic interference. The linearity and dynamic range that can be obtained are more than adequate for central tracking detectors, and the proposed devices have considerable radiation- hardness capabilities. The large bandwidth and short transit times offer possibilities for improved triggering schemes. The proposed R&D programme is aimed at producing multi-channel "demonstrator" units for evaluation both in laboratory and beam tests. This will allow the choice of the most effective technology. A detailed study wil...

Optical Near-field Interactions and Forces for Optoelectronic Devices

Science.gov (United States)

Kohoutek, John Michael

Throughout history, as a particle view of the universe began to take shape, scientists began to realize that these particles were attracted to each other and hence came up with theories, both analytical and empirical in nature, to explain their interaction. The interaction pair potential (empirical) and electromagnetics (analytical) theories, both help to explain not only the interaction between the basic constituents of matter, such as atoms and molecules, but also between macroscopic objects, such as two surfaces in close proximity. The electrostatic force, optical force, and Casimir force can be categorized as such forces. A surface plasmon (SP) is a collective motion of electrons generated by light at the interface between two mediums of opposite signs of dielectric susceptibility (e.g. metal and dielectric). Recently, surface plasmon resonance (SPR) has been exploited in many areas through the use of tiny antennas that work on similar principles as radio frequency (RF) antennas in optoelectronic devices. These antennas can produce a very high gradient in the electric field thereby leading to an optical force, similar in concept to the surface forces discussed above. The Atomic Force Microscope (AFM) was introduced in the 1980s at IBM. Here we report on its uses in measuring these aforementioned forces and fields, as well as actively modulating and manipulating multiple optoelectronic devices. We have shown that it is possible to change the far field radiation pattern of an optical antenna-integrated device through modification of the near-field of the device. This modification is possible through change of the local refractive index or reflectivity of the "hot spot" of the device, either mechanically or optically. Finally, we have shown how a mechanically active device can be used to detect light with high gain and low noise at room temperature. It is the aim of several of these integrated and future devices to be used for applications in molecular sensing

Design and test of optoelectronic system of alignment control based on CCD camera

Science.gov (United States)

Anisimov, A. G.; Gorbachyov, A. A.; Krasnyashchikh, A. V.; Pantushin, A. N.; Timofeev, A. N.

2008-10-01

In this work, design, implementation and test of a system intended for positioning of the elements of turbine units relative to the line of shaft with high precision, are discussed. A procedure of the conversion of coordinates from the instrument system into the system connected with the practical position of the axis of turbine has been devised. It is shown that optoelectronic systems of aligment built by autoreflexive scheme can be used for high precision measurements.

Design and Radiation Assessment of Optoelectronic Transceiver Circuits for ITER

CERN Document Server

Leroux, P; Van Uffelen, M; Steyaert, M

2008-01-01

The presented work describes the design and characterization results of different electronic building blocks for a MGy gamma radiation tolerant optoelectronic transceiver aiming at ITER applications. The circuits are implemented using the 70GHz fT SiGe HBT in a 0.35μm BiCMOS technology. A VCSEL driver circuit has been designed and measured up to a TID of 1.6 MGy and up to a bit rate of 622Mbps. No significant degradation is seen in the eye opening of the output signal. On the receiver side, both a 1GHz, 3kΩ transimpedance and a 5GHz Cherry-Hooper amplifier with over 20dB voltage gain have been designed.

Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

Science.gov (United States)

Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

2016-11-15

Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

Software for Use with Optoelectronic Measuring Tool

Science.gov (United States)

Ballard, Kim C.

2004-01-01

A computer program has been written to facilitate and accelerate the process of measurement by use of the apparatus described in "Optoelectronic Tool Adds Scale Marks to Photographic Images" (KSC-12201). The tool contains four laser diodes that generate parallel beams of light spaced apart at a known distance. The beams of light are used to project bright spots that serve as scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The computer program is applicable to a scene that contains the laser spots and that has been imaged in a square pixel format that can be imported into a graphical user interface (GUI) generated by the program. It is assumed that the laser spots and the distance(s) to be measured all lie in the same plane and that the plane is perpendicular to the line of sight of the camera used to record the image

Energy Conversion Properties of ZnSiP2, a Lattice-Matched Material for Silicon-Based Tandem Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun; Borup, Kasper A.; Krishna, Lakshmi; Kuciauskas, Darius; Dippo, Patricia C.; Ortiz, Brenden R.; Stradins, Paul; Stevanovic, Vladan; Toberer, Eric S.; Tamboli, Adele C.

2016-11-21

ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.

Optoelectronics and defect levels in hydroxyapatite by first-principles

Science.gov (United States)

Avakyan, Leon A.; Paramonova, Ekaterina V.; Coutinho, José; Öberg, Sven; Bystrov, Vladimir S.; Bugaev, Lusegen A.

2018-04-01

Hydroxyapatite (HAp) is an important component of mammal bones and teeth, being widely used in prosthetic implants. Despite the importance of HAp in medicine, several promising applications involving this material (e.g., in photo-catalysis) depend on how well we understand its fundamental properties. Among the ones that are either unknown or not known accurately, we have the electronic band structure and all that relates to it, including the bandgap width. We employ state-of-the-art methodologies, including density hybrid-functional theory and many-body perturbation theory within the dynamically screened single-particle Green's function approximation, to look at the optoelectronic properties of HAp. These methods are also applied to the calculation of defect levels. We find that the use of a mix of (semi-)local and exact exchange in the exchange-correlation functional brings a drastic improvement to the band structure. Important side effects include improvements in the description of dielectric and optical properties not only involving conduction band (excited) states but also the valence. We find that the highly dispersive conduction band bottom of HAp originates from anti-bonding σ* states along the ⋯OH-OH-⋯ infinite chain, suggesting the formation of a conductive 1D-ice phase. The choice of the exchange-correlation treatment to the calculation of defect levels was also investigated by using the OH-vacancy as a testing model. We find that donor and acceptor transitions obtained within semi-local density functional theory (DFT) differ from those of hybrid-DFT by almost 2 eV. Such a large discrepancy emphasizes the importance of using a high-quality description of the electron-electron interactions in the calculation of electronic and optical transitions of defects in HAp.

Melanin and Melanin-Related Polymers as Materials with Biomedical and Biotechnological Applications?Cuttlefish Ink and Mussel Foot Proteins as Inspired Biomolecules

OpenAIRE

Solano, Francisco

2017-01-01

The huge development of bioengineering during the last years has boosted the search for new bioinspired materials, with tunable chemical, mechanical, and optoelectronic properties for the design of semiconductors, batteries, biosensors, imaging and therapy probes, adhesive hydrogels, tissue restoration, photoprotectors, etc. These new materials should complement or replace metallic or organic polymers that cause cytotoxicity and some adverse health effects. One of the most interesting biomate...

Vertical MoSe2-MoO x p-n heterojunction and its application in optoelectronics

Science.gov (United States)

Chen, Xiaoshuang; Liu, Guangbo; Hu, Yunxia; Cao, Wenwu; Hu, PingAn; Hu, Wenping

2018-01-01

The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ˜8 μm. Vertical MoSe2-MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2-MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W-1, 0.85 × 108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm-2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.

Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

KAUST Repository

Catrysse, Peter B.

2010-08-11

We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from that of optically thick metallic films. We analyze the optical properties when performing a geometrical transformation that maintains the electrical properties. For one-dimensional patterns of metallic wires, the analysis favors tall and narrow wires. Our design principles remain valid for oblique incidence and readily carry over to two-dimensional patterns. © 2010 American Chemical Society.

Probing Local Heterogeneity in the Optoelectronic Properties of Organic-Inorganic Perovskites Using Fluorescence Microscopy

Science.gov (United States)

De Quilettes, Dane W.

rational design of materials and is leveraged to deploy chemical passivation techniques to improve the optoelectronic quality of the material, with the ultimate goal of improving photovoltaic power conversion efficiency. Reducing non-radiative recombination in semiconducting materials is a prerequisite for achieving the highest performance in a host of light-emitting and photovoltaic applications. In the first study described herein, we used confocal fluorescence microscopy correlated with scanning electron microscopy to spatially resolve the photoluminescence (PL) decay dynamics from films of nonstoichiometric organic-inorganic perovskites, CH3NH 3PbI3(Cl). The PL intensities and lifetimes varied between different grains in the same film, even for films that exhibited long bulk lifetimes. The grain boundaries were dimmer and exhibited faster non-radiative decay. Energy-dispersive x-ray spectroscopy showed a positive correlation between chlorine concentration and regions of brighter PL, while PL imaging revealed that chemical treatment with pyridine could activate previously dark grains. Next, to better elucidate the sources of these loss pathways, we performed a systematic study using confocal and widefield fluorescence microscopy to deconvolve the contributions from diffusion and non-radiative recombination which lead to the observed image heterogeneity. We showed that, in addition to local variations in non-radiative loss, carriers diffuse anisotropically due to heterogeneous intergrain connectivity. In addition to non-radiative recombination impeding material performance, we also showed that the materials exhibit a range of complex dynamic phenomena under illumination. We used a unique combination of confocal PL microscopy and chemical imaging to correlate the local changes in photophysics with composition in CH3NH 3PbI3 films under illumination. We demonstrated that the photo-induced "brightening" of the perovskite PL can be attributed to an order

Emission Mechanisms of Si Nanocrystals and Defects in SiO2 Materials

Directory of Open Access Journals (Sweden)

José Antonio Rodríguez

2014-01-01

Full Text Available Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2 is presented.

Giant magnetotransmission and magnetoreflection in ferromagnetic materials

International Nuclear Information System (INIS)

Telegin, A.V.; Sukhorukov, Yu.P.; Loshkareva, N.N.; Mostovshchikova, E.V.; Bebenin, N.G.; Gan'shina, E.A.; Granovsky, A.B.

2015-01-01

We present a brief review on magnetotransmission (magnetoabsorption) and magnetoreflection of natural (unpolarized) light in ferromagnetic chromium chalcogenide spinel, manganites with perovskite structure and thin-film metallic nanostructures in the middle infrared spectral range. The magnetooptical effects under discussion are of high interest for numerous and promising applications in the infrared optoelectronics. - Highlights: • Magnetotransmission and magnetoreflection of light in ferromagnetic are presented. • The effects are greater than common magnetooptical phenomena in the infrared. • The effects may have a different origin depending on a material or spectral range. • Possible applications of the magnetotransmission and magnetoreflection are discussed

Giant magnetotransmission and magnetoreflection in ferromagnetic materials

Energy Technology Data Exchange (ETDEWEB)

Telegin, A.V., E-mail: telegin@imp.uran.ru [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620137 Yekaterinburg (Russian Federation); Sukhorukov, Yu.P.; Loshkareva, N.N.; Mostovshchikova, E.V.; Bebenin, N.G. [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620137 Yekaterinburg (Russian Federation); Gan' shina, E.A.; Granovsky, A.B. [Moscow State University, 119991 Moscow (Russian Federation)

2015-06-01

We present a brief review on magnetotransmission (magnetoabsorption) and magnetoreflection of natural (unpolarized) light in ferromagnetic chromium chalcogenide spinel, manganites with perovskite structure and thin-film metallic nanostructures in the middle infrared spectral range. The magnetooptical effects under discussion are of high interest for numerous and promising applications in the infrared optoelectronics. - Highlights: • Magnetotransmission and magnetoreflection of light in ferromagnetic are presented. • The effects are greater than common magnetooptical phenomena in the infrared. • The effects may have a different origin depending on a material or spectral range. • Possible applications of the magnetotransmission and magnetoreflection are discussed.

Capacity-oriented curriculum system of optoelectronics in the context of large category cultivation

Science.gov (United States)

Luo, Yuan; Hu, Zhangfang; Zhang, Yi

2017-08-01

In order to cultivate the innovative talents with the comprehensive development to meet the talents demand for development of economic society, Chongqing University of Posts and Telecommunications implements cultivation based on broadening basic education and enrolment in large category of general education. Optoelectronic information science and engineering major belongs to the electronic engineering category. The "2 +2" mode is utilized for personnel training, where students are without major in the first and second year and assigned to a major within the major categories in the end of the second year. In the context of the comprehensive cultivation, for the changes in the demand for professionals in the global competitive environment with the currently rapid development, especially the demand for the professional engineering technology personnel suitable to industry and development of local economic society, the concept of CDIO engineering ability cultivation is used for reference. Thus the curriculum system for the three-node structure optoelectronic information science and engineering major is proposed, which attaches great importance to engineering practice and innovation cultivation under the background of the comprehensive cultivation. The conformity between the curriculum system and the personnel training objectives is guaranteed effectively, and the consistency between the teaching philosophy and the teaching behavior is enhanced. Therefore, the idea of major construction is clear with specific characteristics.

The impact of semiconductor, electronics and optoelectronic industries on downstream perfluorinated chemical contamination in Taiwanese rivers

International Nuclear Information System (INIS)

Lin, Angela Yu-Chen; Panchangam, Sri Chandana; Lo, Chao-Chun

2009-01-01

This study provides the first evidence on the influence of the semiconductor and electronics industries on perfluorinated chemicals (PFCs) contamination in receiving rivers. We have quantified ten PFCs, including perfluoroalkyl sulfonates (PFASs: PFBS, PFHxS, PFOS) and perfluoroalkyl carboxylates (PFCAs: PFHxA, PFHpA, PFOA, PFNA, PFDA, PFUnA, PFDoA) in semiconductor, electronic, and optoelectronic industrial wastewaters and their receiving water bodies (Taiwan's Keya, Touchien, and Xiaoli rivers). PFOS was found to be the major constituent in semiconductor wastewaters (up to 0.13 mg/L). However, different PFC distributions were found in electronics plant wastewaters; PFOA was the most significant PFC, contributing on average 72% to the effluent water samples, followed by PFOS (16%) and PFDA (9%). The distribution of PFCs in the receiving rivers was greatly impacted by industrial sources. PFOS, PFOA and PFDA were predominant and prevalent in all the river samples, with PFOS detected at the highest concentrations (up to 5.4 μg/L). - The semiconductor, electronics and optoelectronic industries are the primary source of PFC contamination in downstream aqueous environments

Probing individal subcells of fully printed and coated polymer tandem solar cells using multichromatic opto-electronic characterization methods

DEFF Research Database (Denmark)

Larsen-Olsen, Thue Trofod; Andersen, Thomas Rieks; Dam, Henrik Friis

2015-01-01

In this study, a method to opto-electronically probe the individual junctions and carrier transport across interfaces in fully printed and coated tandem polymer solar cells is described, enabling the identification of efficiency limiting printing/coating defects. The methods used are light beam...

The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zubizarreta, C., E-mail: cristina.zubizarreta@tekniker.es [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); G-Berasategui, E.; Ciarsolo, I.; Barriga, J. [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); Gaspar, D.; Martins, R.; Fortunato, E. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa (Portugal)

2016-09-01

Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10{sup −3} Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

Agreement between fiber optic and optoelectronic systems for quantifying sagittal plane spinal curvature in sitting.

Science.gov (United States)

Cloud, Beth A; Zhao, Kristin D; Breighner, Ryan; Giambini, Hugo; An, Kai-Nan

2014-07-01

Spinal posture affects how individuals function from a manual wheelchair. There is a need to directly quantify spinal posture in this population to ultimately improve function. A fiber optic system, comprised of an attached series of sensors, is promising for measuring large regions of the spine in individuals sitting in a wheelchair. The purpose of this study was to determine the agreement between fiber optic and optoelectronic systems for measuring spinal curvature, and describe the range of sagittal plane spinal curvatures in natural sitting. Able-bodied adults (n = 26, 13 male) participated. Each participant assumed three sitting postures: natural, slouched (accentuated kyphosis), and extension (accentuated lordosis) sitting. Fiber optic (ShapeTape) and optoelectronic (Optotrak) systems were applied to the skin over spinous processes from S1 to C7 and used to measure sagittal plane spinal curvature. Regions of kyphosis and lordosis were identified. A Cobb angle-like method was used to quantify lordosis and kyphosis. Generalized linear model and Bland-Altman analyses were used to assess agreement. A strong correlation exists between curvature values obtained with Optotrak and ShapeTape (R(2) = 0.98). The mean difference between Optotrak and ShapeTape for kyphosis in natural, extension, and slouched postures was 4.30° (95% LOA: -3.43 to 12.04°), 3.64° (95% LOA: -1.07 to 8.36°), and 4.02° (95% LOA: -2.80 to 10.84°), respectively. The mean difference for lordosis, when present, in natural and extension postures was 2.86° (95% LOA: -1.18 to 6.90°) and 2.55° (95% LOA: -3.38 to 8.48°), respectively. In natural sitting, the mean ± SD of kyphosis values was 35.07 ± 6.75°. Lordosis was detected in 8/26 participants: 11.72 ± 7.32°. The fiber optic and optoelectronic systems demonstrate acceptable agreement for measuring sagittal plane thoracolumbar spinal curvature. Copyright © 2014 Elsevier B.V. All rights reserved.

Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

Science.gov (United States)

Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

2017-02-01

Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Universal description of channel plasmons in two-dimensional materials

DEFF Research Database (Denmark)

Gonçalves, P. A. D.; Bozhevolnyi, Sergey I.; Mortensen, N. Asger

2017-01-01

Channeling surface plasmon-polaritons to control their propagation direction is of the utmost importance for future optoelectronic devices. Here, we develop an effective-index method to describe and characterize the properties of 2D material's channel plasmon-polaritons (CPPs) guided along a V......-shaped channel. Focusing on the case of graphene, we derive a universal Schr\\"odinger-like equation from which one can determine the dispersion relation of graphene CPPs and corresponding field distributions at any given frequency, since they depend on the geometry of the structure alone. The results...

Simultaneous topographical, electrical and optical microscopy of optoelectronic devices at the nanoscale

KAUST Repository

Kumar, Naresh

2017-01-12

Novel optoelectronic devices rely on complex nanomaterial systems where the nanoscale morphology and local chemical composition are critical to performance. However, the lack of analytical techniques that can directly probe these structure-property relationships at the nanoscale presents a major obstacle to device development. In this work, we present a novel method for non-destructive, simultaneous mapping of the morphology, chemical composition and photoelectrical properties with <20 nm spatial resolution by combining plasmonic optical signal enhancement with electrical-mode scanning probe microscopy. We demonstrate that this combined approach offers subsurface sensitivity that can be exploited to provide molecular information with a nanoscale resolution in all three spatial dimensions. By applying the technique to an organic solar cell device, we show that the inferred surface and subsurface composition distribution correlates strongly with the local photocurrent generation and explains macroscopic device performance. For instance, the direct measurement of fullerene phase purity can distinguish between high purity aggregates that lead to poor performance and lower purity aggregates (fullerene intercalated with polymer) that result in strong photocurrent generation and collection. We show that the reliable determination of the structure-property relationship at the nanoscale can remove ambiguity from macroscopic device data and support the identification of the best routes for device optimisation. The multi-parameter measurement approach demonstrated herein is expected to play a significant role in guiding the rational design of nanomaterial-based optoelectronic devices, by opening a new realm of possibilities for advanced investigation via the combination of nanoscale optical spectroscopy with a whole range of scanning probe microscopy modes.

Nanocrystalline SnO2-TiO2 thin film deposited on base of equilateral prism as an opto-electronic humidity sensor

Science.gov (United States)

Yadav, B. C.; Verma, Nidhi; Singh, Satyendra

2012-09-01

Present paper reports the synthesis of SnO2-TiO2 nanocomposite, its characterization and performance as opto-electronic humidity sensor. Nanocrystalline SnO2-TiO2 film was deposited on the base of an equilateral prism using a photo resist spinner and the as prepared film was annealed at 200 °C for 2 h. The crystal structure of the prepared film was investigated using X-ray diffraction (XRD). Minimum crystallite size of the material was found 7 nm. Surface morphology of the film was investigated by Scanning electron microscope (SEM LEO-0430, Cambridge). SEM image shows that the film is porous. Differential scanning calorimetry (DSC) of as synthesized material shows two exothermic peaks at about 40 and 110 °C, respectively which are due to the evaporation of chemical impurities and water. Further the prepared film was investigated through the exposure of humidity and relative humidity (%RH) was measured directly in terms of modulation in the intensity of light recorded on a digital power meter. The maximum sensitivity of sensor was found 4.14 μW/%RH, which is quite significant for sensor fabrication purposes.

Recent Developments of an Opto-Electronic THz Spectrometer for High-Resolution Spectroscopy.

Science.gov (United States)

Hindle, Francis; Yang, Chun; Mouret, Gael; Cuisset, Arnaud; Bocquet, Robin; Lampin, Jean-François; Blary, Karine; Peytavit, Emilien; Akalin, Tahsin; Ducournau, Guillaume

2009-01-01

A review is provided of sources and detectors that can be employed in the THz range before the description of an opto-electronic source of monochromatic THz radiation. The realized spectrometer has been applied to gas phase spectroscopy. Air-broadening coefficients of HCN are determined and the insensitivity of this technique to aerosols is demonstrated by the analysis of cigarette smoke. A multiple pass sample cell has been used to obtain a sensitivity improvement allowing transitions of the volatile organic compounds to be observed. A solution to the frequency metrology is presented and promises to yield accurate molecular line center measurements.

Recent Developments of an Opto-Electronic THz Spectrometer for High-Resolution Spectroscopy

Science.gov (United States)

Hindle, Francis; Yang, Chun; Mouret, Gael; Cuisset, Arnaud; Bocquet, Robin; Lampin, Jean-François; Blary, Karine; Peytavit, Emilien; Akalin, Tahsin; Ducournau, Guillaume

2009-01-01

A review is provided of sources and detectors that can be employed in the THz range before the description of an opto-electronic source of monochromatic THz radiation. The realized spectrometer has been applied to gas phase spectroscopy. Air-broadening coefficients of HCN are determined and the insensitivity of this technique to aerosols is demonstrated by the analysis of cigarette smoke. A multiple pass sample cell has been used to obtain a sensitivity improvement allowing transitions of the volatile organic compounds to be observed. A solution to the frequency metrology is presented and promises to yield accurate molecular line center measurements. PMID:22291552

An Electronic Structure Approach to Charge Transfer and Transport in Molecular Building Blocks for Organic Optoelectronics

Science.gov (United States)

Hendrickson, Heidi Phillips

A fundamental understanding of charge separation in organic materials is necessary for the rational design of optoelectronic devices suited for renewable energy applications and requires a combination of theoretical, computational, and experimental methods. Density functional theory (DFT) and time-dependent (TD)DFT are cost effective ab-initio approaches for calculating fundamental properties of large molecular systems, however conventional DFT methods have been known to fail in accurately characterizing frontier orbital gaps and charge transfer states in molecular systems. In this dissertation, these shortcomings are addressed by implementing an optimally-tuned range-separated hybrid (OT-RSH) functional approach within DFT and TDDFT. The first part of this thesis presents the way in which RSH-DFT addresses the shortcomings in conventional DFT. Environmentally-corrected RSH-DFT frontier orbital energies are shown to correspond to thin film measurements for a set of organic semiconducting molecules. Likewise, the improved RSH-TDDFT description of charge transfer excitations is benchmarked using a model ethene dimer and silsesquioxane molecules. In the second part of this thesis, RSH-DFT is applied to chromophore-functionalized silsesquioxanes, which are currently investigated as candidates for building blocks in optoelectronic applications. RSH-DFT provides insight into the nature of absorptive and emissive states in silsesquioxanes. While absorption primarily involves transitions localized on one chromophore, charge transfer between chromophores and between chromophore and silsesquioxane cage have been identified. The RSH-DFT approach, including a protocol accounting for complex environmental effects on charge transfer energies, was tested and validated against experimental measurements. The third part of this thesis addresses quantum transport through nano-scale junctions. The ability to quantify a molecular junction via spectroscopic methods is crucial to their

Operational parameters of an opto-electronic neural network employing fixed planar holographic interconnects

Science.gov (United States)

Keller, P. E.; Gmitro, A. F.

1993-07-01

A prototype neutral network system of multifaceted, planar interconnection holograms and opto-electronic neurons is analyzed. This analysis shows that a hologram fabricated with electron-beam lithography has the capacity to connect 6700 neuron outputs to 6700 neuron inputs, and that, the encoded synaptic weights have a precision of approximately 5 bits. Higher interconnection densities can be achieved by accepting a lower synaptic weight accuracy. For systems employing laser diodes at the outputs of the neurons, processing rates in the range of 45 to 720 trillion connections per second can potentially be achieved.

Exfoliating and Dispersing Few-Layered Graphene in Low-Boiling-Point Organic Solvents towards Solution-Processed Optoelectronic Device Applications.

Science.gov (United States)

Zhang, Lu; Miao, Zhongshuo; Hao, Zhen; Liu, Jun

2016-05-06

With normal organic surfactants, graphene can only be dispersed in water and cannot be dispersed in low-boiling-point organic solvents, which hampers its application in solution-processed organic optoelectronic devices. Herein, we report the exfoliation of graphite into graphene in low-boiling-point organic solvents, for example, methanol and acetone, by using edge-carboxylated graphene quantum dots (ECGQD) as the surfactant. The great capability of ECGQD for graphene dispersion is due to its ultralarge π-conjugated unit that allows tight adhesion on the graphene surface through strong π-π interactions, its edge-carboxylated structure that diminishes the steric effects of the oxygen-containing functional groups on the basal plane of ECGQD, and its abundance of carboxylic acid groups for solubility. The graphene dispersion in methanol enables the application of graphene:ECGQD as a cathode interlayer in polymer solar cells (PSCs). Moreover, the PSC device performance of graphene:ECGQD is better than that of Ca, the state-of-the-art cathode interlayer material. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CuPc/C60 heterojunction thin film optoelectronic devices

International Nuclear Information System (INIS)

Murtaza, Imran; Karimov, Khasan S.; Qazi, Ibrahim

2010-01-01

The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C 60 /Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C 60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C 60 , where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. (semiconductor devices)

Critical difference between optoelectronic properties of α- and β-SnWO4semiconductors: A DFT/HSE06 and experimental investigation

KAUST Repository

Harb, Moussab; Ziani, Ahmed; Takanabe, Kazuhiro

2016-01-01

The optoelectronic properties of β-SnWO4 are investigated in details using experiments on thin film generated by rapid quenching and the first-principles quantum calculations based on the density functional theory (DFT, including the perturbation

Optoelectronic fowl adenovirus detection based on local electric field enhancement on graphene quantum dots and gold nanobundle hybrid.

Science.gov (United States)

Ahmed, Syed Rahin; Mogus, Jack; Chand, Rohit; Nagy, Eva; Neethirajan, Suresh

2018-04-30

An optoelectronic sensor is a rapid diagnostic tool that allows for an accurate, reliable, field-portable, low-cost device for practical applications. In this study, template-free In situ gold nanobundles (Au NBs) were fabricated on an electrode for optoelectronic sensing of fowl adenoviruses (FAdVs). Au NB film was fabricated on carbon electrodes working area using L(+) ascorbic acid, gold chroloauric acid and poly-l-lysine (PLL) through modified layer-by-layer (LbL) method. A scanning electron microscopic (SEM) image of the Au NBs revealed a NB-shaped Au structure with many kinks on its surface, which allow local electric field enhancement through light-matter interaction with graphene quantum dots (GQDs). Here, GQDs were synthesized through an autoclave-assisted method. Characterization experiments revealed blue-emissive, well-dispersed GQDs that were 2-3nm in size with the fluorescence emission peak of GQDs located at 405nm. Both Au NBs and GQDs were conjugated with target FAdVs specific antibodies that bring them close to each other with the addition of target FAdVs through antibody-antigen interaction. At close proximity, light-matter interaction between Au NBs and QDs produces a local electric signal enhancement under Ultraviolet-visible (UV-visible) light irradiation that allows the detection of very low concentrations of target virus even in complex biological media. A proposed optoelectronic sensor showed a linear relationship between the target FAdVs and the electric signal up to 10 Plaque forming unit (PFU)/mL with a limit of detection (LOD) of 8.75 PFU/mL. The proposed sensing strategy was 100 times more sensitive than conventional ELISA method. Copyright © 2017 Elsevier B.V. All rights reserved.

An Opto-Electronic Sensor for Detecting Soil Microarthropods and Estimating Their Size in Field Conditions

Directory of Open Access Journals (Sweden)

Csongor I. Gedeon

2017-08-01

Full Text Available Methods to estimate density of soil-dwelling arthropods efficiently, accurately and continuously are critical for investigating soil biological activity and evaluating soil management practices. Soil-dwelling arthropods are currently monitored manually. This method is invasive, and time- and labor-consuming. Here we describe an infrared opto-electronic sensor for detection of soil microarthropods in the size range of 0.4–10 mm. The sensor is built in a novel microarthropod trap designed for field conditions. It allows automated, on-line, in situ detection and body length estimation of soil microarthropods. In the opto-electronic sensor the light source is an infrared LED. Two plano-convex optical lenses are placed along the virtual optical axis. One lens on the receiver side is placed between the observation space at 0.5–1 times its focal length from the sensor, and another emitter side lens is placed between the observation space and the light source in the same way. This paper describes the setup and operating mechanism of the sensor and the control unit, and through basic tests it demonstrates its potential in automated detection of soil microarthropods. The sensor may be used for monitoring activities, especially for remote observation activities in soil and insect ecology or pest control.

MOVPE growth and characterisation of ZnO properties for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Oleynik, N.

2007-03-07

In this work a new Metalorganic Vapor Phase Epitaxy (MOVPE) method was developed for the growth and doping of high-quality ZnO films. ZnO is a unique optoelectronic material for the effective light generation in the green to the UV spectral range. Optoelectronic applications of ZnO require impurity-free monocrystalline films with smooth surfaces and low concentration of the defects in the crystal lattice. At the beginning of this work only few reports on MOVPE growth of polycrystalline ZnO existed. The low quality of ZnO is attributed to the lack of an epitaxially matched substrate, and gas-phase prereactions between the Zn- and O-precursors. To achieve control over the ZnO quality, several O-precursors were tested for the growth on GaN/Si(111) or GaN/Sapphire substrates at different reactor temperatures and pressures. ZnO layers with XRD rocking curve FWHMs of the (0002) reflection of 180'' and narrow cathodoluminescence of 1.3 meV of the dominant I{sub 8} emission were synthesized using a two-step growth procedure. In this procedure, ZnO is homoepitaxially grown at high temperature using N{sub 2}O as O-precursor on a low temperature grown ZnO buffer layer using tertiary-butanol as O-precursor. p-Type doping of ZnO, which usually exhibits n-type behaviour, is very difficult. This doping asymmetry represents an issue for ZnO-based devices. Beginning from 1992, a growing number of reports have been claiming a fabrication of p-type ZnO, but, due to the missing reproducibilty, they are still questionable. Native defects, non-stoichiometry, and hydrogen are sources of n-type conductivity of ZnO. Together with a low solubility of the potential p-type dopants and deep position of impurity levels, these factors partly explain p-type doping difficulties in ZnO. However, there is no fully described mechanism of the ZnO doping asymmetry yet. In this work, NH{sub 3}, unsymmetrical dimethylhydrazine (UDMHy), diisobutylamine, and NO nitrogen precursors were studied

Polynomial law for controlling the generation of n-scroll chaotic attractors in an optoelectronic delayed oscillator

Energy Technology Data Exchange (ETDEWEB)

Márquez, Bicky A., E-mail: bmarquez@ivic.gob.ve; Suárez-Vargas, José J., E-mail: jjsuarez@ivic.gob.ve; Ramírez, Javier A. [Centro de Física, Instituto Venezolano de Investigaciones Científicas, km. 11 Carretera Panamericana, Caracas 1020-A (Venezuela, Bolivarian Republic of)

2014-09-01

Controlled transitions between a hierarchy of n-scroll attractors are investigated in a nonlinear optoelectronic oscillator. Using the system's feedback strength as a control parameter, it is shown experimentally the transition from Van der Pol-like attractors to 6-scroll, but in general, this scheme can produce an arbitrary number of scrolls. The complexity of every state is characterized by Lyapunov exponents and autocorrelation coefficients.

Infrared hyperbolic metasurface based on nanostructured van der Waals materials

Science.gov (United States)

Li, Peining; Dolado, Irene; Alfaro-Mozaz, Francisco Javier; Casanova, Fèlix; Hueso, Luis E.; Liu, Song; Edgar, James H.; Nikitin, Alexey Y.; Vélez, Saül; Hillenbrand, Rainer

2018-02-01

Metasurfaces with strongly anisotropic optical properties can support deep subwavelength-scale confined electromagnetic waves (polaritons), which promise opportunities for controlling light in photonic and optoelectronic applications. We developed a mid-infrared hyperbolic metasurface by nanostructuring a thin layer of hexagonal boron nitride that supports deep subwavelength-scale phonon polaritons that propagate with in-plane hyperbolic dispersion. By applying an infrared nanoimaging technique, we visualize the concave (anomalous) wavefronts of a diverging polariton beam, which represent a landmark feature of hyperbolic polaritons. The results illustrate how near-field microscopy can be applied to reveal the exotic wavefronts of polaritons in anisotropic materials and demonstrate that nanostructured van der Waals materials can form a highly variable and compact platform for hyperbolic infrared metasurface devices and circuits.

Recent Developments of an Opto-Electronic THz Spectrometer for High-Resolution Spectroscopy

Directory of Open Access Journals (Sweden)

Guillaume Ducournau

2009-11-01

Full Text Available A review is provided of sources and detectors that can be employed in the THz range before the description of an opto-electronic source of monochromatic THz radiation. The realized spectrometer has been applied to gas phase spectroscopy. Air-broadening coefficients of HCN are determined and the insensitivity of this technique to aerosols is demonstrated by the analysis of cigarette smoke. A multiple pass sample cell has been used to obtain a sensitivity improvement allowing transitions of the volatile organic compounds to be observed. A solution to the frequency metrology is presented and promises to yield accurate molecular line center measurements.

Displacement measurement using an optoelectronic oscillator with an intra-loop Michelson interferometer.

Science.gov (United States)

Lee, Jehyun; Park, Sooyoung; Seo, Dae Han; Yim, Sin Hyuk; Yoon, Seokchan; Cho, D

2016-09-19

We report on measurement of small displacements with sub-nanometer precision using an optoelectronic oscillator (OEO) with an intra-loop Michelson interferometer. In comparison with conventional homodyne and heterodyne detection methods, where displacement appears as a power change or a phase shift, respectively, in the OEO detection, the displacement produces a shift in the oscillation frequency. In comparison with typical OEO sensors, where the frequency shift is proportional to the OEO oscillation frequency in radio-frequency domain, the frequency shift in our method with an intra-loop interferometer is proportional to an optical frequency. We constructed a hybrid apparatus and compared characteristics of the OEO and heterodyne detection methods.

Research study on harmonized molecular materials (HMM); Bunshi kyocho zairyo ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

As functional material to satisfy various needs for environmental harmonization and efficient conversion for information-oriented and aging societies, HMM were surveyed. Living bodies effectively carry out transmission/processing of information, and transport/conversion of substances, and these functions are based on harmonization between organic molecules, and between those and metal or inorganic ones. HMM is a key substance to artificially realize these bio-related functions. Its R & D aims at (1) Making a breakthrough in production process based on innovation of material separation/conversion technology, (2) Contribution to an information-oriented society by high-efficiency devices, and (3) Growth of a functional bio-material industry. HMM is classified into three categories: (1) Assembly materials such as organic ultra-thin films (LB film, self-organizing film), and organic/inorganic hybrid materials for optoelectronics, sensors and devices, (2) Mesophase materials such as functional separation membrane and photo-conductive material, and (3) Microporous materials such as synthetic catalyst using guest/host materials. 571 refs., 88 figs., 21 tabs.

Soluble phthalocyanines - new materials for optoelectronics

Czech Academy of Sciences Publication Activity Database

Biler, M.; Zhivkov, I.; Rakušan, J.; Karásková, M.; Pochekailov, S.; Wang, G.; Nešpůrek, Stanislav

2005-01-01

Roč. 7, č. 3 (2005), s. 1365-1370 ISSN 1454-4164 R&D Projects: GA MPO FT-TA/036; GA MŠk ME 700 Institutional research plan: CEZ:AV0Z40500505 Keywords : phthalocyanine * poly[3,4-(ethylenedioxy)thiophene] * electrical properties Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.138, year: 2005

Photonics

Science.gov (United States)

1991-01-01

Optoelectronic materials and devices are examined. Optoelectronic devices, which generate, detect, modulate, or switch electromagnetic radiation are being developed for a variety of space applications. The program includes spatial light modulators, solid state lasers, optoelectronic integrated circuits, nonlinear optical materials and devices, fiber optics, and optical networking photovoltaic technology and optical processing.

Radiative sky cooling: fundamental physics, materials, structures, and applications

Science.gov (United States)

Sun, Xingshu; Sun, Yubo; Zhou, Zhiguang; Alam, Muhammad Ashraful; Bermel, Peter

2017-07-01

Radiative sky cooling reduces the temperature of a system by promoting heat exchange with the sky; its key advantage is that no input energy is required. We will review the origins of radiative sky cooling from ancient times to the modern day, and illustrate how the fundamental physics of radiative cooling calls for a combination of properties that may not occur in bulk materials. A detailed comparison with recent modeling and experiments on nanophotonic structures will then illustrate the advantages of this recently emerging approach. Potential applications of these radiative cooling materials to a variety of temperature-sensitive optoelectronic devices, such as photovoltaics, thermophotovoltaics, rectennas, and infrared detectors, will then be discussed. This review will conclude by forecasting the prospects for the field as a whole in both terrestrial and space-based systems.

PREFACE: 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19)

Science.gov (United States)

González, T.; Martín-Martínez, M. J.; Mateos, J.

2015-10-01

The 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19) was held at the Hospedería Fonseca (Universidad de Salamanca, Spain), on 29 June - 2 July, 2015, and was organized by the Electronics Area from the University of Salamanca. The Conference is held biannually and covers the recent progress in the field of electron dynamics in solid-state materials and devices. This was the 19th meeting of the international conference series formerly named Hot Carriers in Semiconductors (HCIS), first held in Modena in 1973. In the edition of 1997 in Berlin the name of the conference changed to International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, keeping the same acronym, HCIS; and finally in the edition of Montpellier in 2009 the name was again changed to the current one, International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON). The latest editions took place in Santa Barbara, USA, in 2011 and Matsue, Japan, in 2013. Research work on electron dynamics involves quite different disciplines, and requires both fundamental and technological scientific efforts. Attendees to the conference come mostly from academic institutions, belonging to both theoretical and experimental groups working in a variety of fields, such as solid-state physics, electronics, optics, electrical engineering, material science, laser physics, etc. In this framework, events like the EDISON conference become a basic channel for the progress in the field. Here, researchers working in different areas can meet, present their latest advances and exchange their ideas. The program of EDISON'19 included 13 invited papers, 61 oral contributions and 73 posters. These contributions originated from scientists in more than 30 different countries. The Conference gathered 140 participants, coming from 24 different countries, most from Europe, but also with a significant participation

Influence of pH on optoelectronic properties of zinc sulphide thin films prepared using hydrothermal and spin coating method

Science.gov (United States)

Choudapur, V. H.; Bennal, A. S.; Raju, A. B.

2018-04-01

The ZnS nanomaterial is synthesized by hydrothermal method under optimized conditions using Zinc acetate and sodium sulphide as precursors. The Zinc Sulphide thin films are obtained by simple spin coating method with high optical transmittance. The prepared thin films are adhesive and uniform. The x-ray diffraction analysis showed that the films are polycrystalline in cubic phase with the preferred orientation along (111) direction. Current-voltage curves were recorded at room temperature using Keithley 617 programmable electrometer and conductivity is calculated for the film coated on ITO by two probe method. The pH of the solution is varied by using ammonia and hydrochloric acid. The comparative studies of effect of pH on the morphology, crystallanity and optoelectronic properties of the films are studied. It is observed that the pH of the solution has large influence on optoelectronic properties. The thin film prepared with neutral pH has higher crystallanity, bandgap and conductivity as compared to the samples prepared in acidic or basic solutions.

Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

Science.gov (United States)

Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

2017-11-01

Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

Optoelectronic properties of doped hydrothermal ZnO thin films

KAUST Repository

Mughal, Asad J.

2017-03-10

Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.

Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate.

Science.gov (United States)

Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Kim, Taek Sung; Shim, Kyu-Hwan; Hong, Hyobong; Choi, Chel-Jong

2015-10-01

We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.

Near infrared group IV optoelectronics and novel pre-cursors for CVD epitaxy

Science.gov (United States)

Hazbun, Ramsey Michael

Near infrared and mid infrared optoelectronic devices have become increasingly important for the telecommunications, security, and medical imaging industries. The addition of nitrogen to III-V alloys has been widely studied as a method of modifying the band gap for mid infrared (IR) applications. In xGa1-xSb1-y Ny/InAs strained-layer superlattices with type-II (staggered) energy offsets on GaSb substrates, were modeled using eight-band k˙p simulations to analyze the superlattice miniband energies. Three different zero-stress strain balance conditions are reported: fixed superlattice period thickness, fixed InAs well thickness, and fixed InxGa1-xSb 1-yNy barrier thickness. Optoelectronics have traditionally been the realm of III-V semiconductors due to their direct band gap, while integrated circuit chips have been the realm of Group IV semiconductors such as silicon because of its relative abundance and ease of use. Recently the alloying of Sn with Ge and Si has been shown to allow direct band-gap light emission. This presents the exciting prospect of integrating optoelectronics into current Group IV chip fabrication facilities. However, new approaches for low temperature growth are needed to realize these new SiGeSn alloys. Silicon-germanium epitaxy via ultra-high vacuum chemical vapor deposition has the advantage of allowing low process temperatures. Deposition processes are sensitive to substrate surface preparation and the time delay between oxide removal and epitaxial growth. A new monitoring process utilizing doped substrates and defect decoration etching is demonstrated to have controllable and unique sensitivity to interfacial contaminants. Doped substrates were prepared and subjected to various loading conditions prior to the growth of typical Si/SiGe bilayers. The defect densities were correlated to the concentration of interfacial oxygen suggesting this monitoring process may be an effective complement to monitoring via secondary ion mass spectrometry

Silicon opto-electronic wavelength tracker based on an asymmetric 2x3 Mach-Zehnder Interferometer

OpenAIRE

Doménech Gómez, José David; Sanchez Fandiño, Javier Antonio; Gargallo Jaquotot, Bernardo Andrés; Baños Lopez, Rocio; Muñoz Muñoz, Pascual

2014-01-01

In this paper we report on the experimental demonstration of a Silicon-on-Insulator opto-electronic wavelength tracker for the optical telecommunication C-band. The device consist of a 2x3 Mach-Zehnder Interferometer (MZI) with 10 pm resolution and photo-detectors integrated on the same chip. The MZI is built interconnecting two Multimode Interference (MMI) couplers with two waveguides whose length difference is 56 mm. The first MMI has a coupling ratio of 95:05 to com...

Effects of Packing Structure on the Optoelectronic and Charge Transport Properties in Poly(9,9-di-n-octylfluorene-alt-benzothiadiazole)

DEFF Research Database (Denmark)

Donley, C.L.; Zaumseil, J.; Andreasen, Jens Wenzel

2005-01-01

on the optoelectronic and charge transport properties of these films. A model based on quantum chemical calculations, wide-angle X-ray scattering, atomic force microscopy, Raman spectroscopy, photoluminescence, and electron mobility measurements was developed to describe the restructuring of the polymer film...

Study of optoelectronic properties of thin film solar cell materials Cu2ZnSn(S,Se)4 using multiple correlative spatially-resolved spectroscopy techniques

Science.gov (United States)

Chen, Qiong

Containing only earth abundant and environmental friendly elements, quaternary compounds Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe 4 (CZTSe) are considered as promising absorber materials for thin film solar cells. The best record efficiency for this type of thin film solar cell is now 12.6%. As a promising photovoltaic (PV) material, the electrical and optical properties of CZTS(Se) have not been well studied. In this work, an effort has been made to understand the optoelectronic and structural properties, in particular the spatial variations, of CZTS(Se) materials and devices by correlating multiple spatially resolved characterization techniques with sub-micron resolution. Micro-Raman (micro-Raman) spectroscopy was used to analyze the chemistry compositions in CZTS(Se) film; Micro-Photoluminescence (micro-PL) was used to determine the band gap and possible defects. Micro-Laser-Beam-Induced-Current (micro-LBIC) was used to examine the photo-response of CZTS(Se) solar cell in different illumination conditions. Micro-reflectance was used to estimate the reflectance loss. And Micro-I-V measurement was used to compare important electrical parameters from CZTS(Se) solar cells with different device structure or absorber compositions. Scanning electron microscopy and atomic force microscopy were used to characterize the surface morphology. Successfully integrating and correlating these techniques was first demonstrated during the course of this work in our laboratory, and this level of integration and correlation has been rare in the field of PV research. This effort is significant not only for this particular project and also for a wide range of research topics. Applying this approach, in conjunction with high-temperature and high-excitation-power optical spectroscopy, we have been able to reveal the microscopic scale variations among samples and devices that appeared to be very similar from macroscopic material and device characterizations, and thus serve as a very powerful tool

Materials and processing science: Limits for microelectronics

Science.gov (United States)

Rosenberg, R.

1988-09-01

The theme of this talk will be to illustrate examples of technologies that will drive materials and processing sciences to the limit and to describe some of the research being pursued to understand materials interactions which are pervasive to projected structure fabrication. It is to be expected that the future will see a progression to nanostructures where scaling laws will be tested and quantum transport will become more in evidence, to low temperature operation for tighter control and improved performance, to complex vertical profiles where 3D stacking and superlattices will produce denser packing and device flexibility, to faster communication links with optoelectronics, and to compatible packaging technologies. New low temperature processing techniques, such as epitaxy of silicon, PECVD of dielectrics, low temperature high pressure oxidation, silicon-germanium heterostructures, etc., must be combined with shallow metallurgies, new lithographic technologies, maskless patterning, rapid thermal processing (RTP) to produce needed profile control, reduce process incompatibilities and develop new device geometries. Materials interactions are of special consequence for chip substrates and illustrations of work in metal-ceramic and metal-polymer adhesion will be offered.

An opto-electronic joint detection system based on DSP aiming at early cervical cancer screening

Science.gov (United States)

Wang, Weiya; Jia, Mengyu; Gao, Feng; Yang, Lihong; Qu, Pengpeng; Zou, Changping; Liu, Pengxi; Zhao, Huijuan

2015-02-01

The cervical cancer screening at a pre-cancer stage is beneficial to reduce the mortality of women. An opto-electronic joint detection system based on DSP aiming at early cervical cancer screening is introduced in this paper. In this system, three electrodes alternately discharge to the cervical tissue and three light emitting diodes in different wavelengths alternately irradiate the cervical tissue. Then the relative optical reflectance and electrical voltage attenuation curve are obtained by optical and electrical detection, respectively. The system is based on DSP to attain the portable and cheap instrument. By adopting the relative reflectance and the voltage attenuation constant, the classification algorithm based on Support Vector Machine (SVM) discriminates abnormal cervical tissue from normal. We use particle swarm optimization to optimize the two key parameters of SVM, i.e. nuclear factor and cost factor. The clinical data were collected on 313 patients to build a clinical database of tissue responses under optical and electrical stimulations with the histopathologic examination as the gold standard. The classification result shows that the opto-electronic joint detection has higher total coincidence rate than separate optical detection or separate electrical detection. The sensitivity, specificity, and total coincidence rate increase with the increasing of sample numbers in the training set. The average total coincidence rate of the system can reach 85.1% compared with the histopathologic examination.

Ceramic materials on perovskite-type structure for electronic applications

International Nuclear Information System (INIS)

Surowiak, Z.

2003-01-01

Ceramic materials exhibiting the perovskite-type structure constitute among others, resource base for many fields of widely understood electronics (i.e., piezoelectronics, accustoelectronics, optoelectronics, computer science, tele- and radioelectronics etc.). Most often they are used for fabrication of different type sensors (detectors), transducers, ferroelectric memories, limiters of the electronic current intensity, etc., and hence they are numbered among so-called intelligent materials. Prototype structure of this group of materials is the structure of the mineral called perovskite (CaTiO 3 ). By means of right choice of the chemical composition of ABO 3 and deforming the regular perovskite structure (m3m) more than 5000 different chemical compounds and solid solutions exhibiting the perovskite-type structure have been fabricated. The concept of perovskite functional ceramics among often things ferroelectric ceramics, pyroelectric ceramics, piezoelectric ceramics, electrostrictive ceramics, posistor ceramics, superconductive ceramics and ferromagnetic ceramics. New possibilities of application of the perovskite-type ceramics are opened by nanotechnology. (author)

Active stabilization of a rapidly chirped laser by an optoelectronic digital servo-loop control.

Science.gov (United States)

Gorju, G; Jucha, A; Jain, A; Crozatier, V; Lorgeré, I; Le Gouët, J-L; Bretenaker, F; Colice, M

2007-03-01

We propose and demonstrate a novel active stabilization scheme for wide and fast frequency chirps. The system measures the laser instantaneous frequency deviation from a perfectly linear chirp, thanks to a digital phase detection process, and provides an error signal that is used to servo-loop control the chirped laser. This way, the frequency errors affecting a laser scan over 10 GHz on the millisecond timescale are drastically reduced below 100 kHz. This active optoelectronic digital servo-loop control opens new and interesting perspectives in fields where rapidly chirped lasers are crucial.

Chemical synthesis and characterization of CdSe thin films deposited by SILAR technique for optoelectronic applications

Directory of Open Access Journals (Sweden)

K.B. Chaudhari

2016-12-01

Full Text Available CdSe thin films were deposited on the glass substrate by successive ionic layer adsorption and reaction (SILAR method. Different sets of the film are prepared by changing the number of immersion cycles as 30, 40, 50 and 60. Further the effect of a number of immersion cycles on the characteristic structural, morphological, optical and electrical properties of the films are studied. The XRD studies revealed that the deposited films showed hexagonal structure with most prominent reflection along (1 0 1 plane. Moreover, the peak intensity of (1 0 1 plane is found to be increased as the number of immersion cycles is increased. All the thin films look relatively smooth and homogeneous covering the entire surface area in FESEM image. Optical properties of the CdSe thin films for a different number of immersion cycles were studied, which indicates that the absorbance increases with the increase in the immersion cycles. Furthermore, the optical band-gap in conjunction with the electrical resistivity was found to get decreased with increase in the immersion cycles. A good correlation between the number of immersion cycles and the physical properties indicates a simple method to manipulate the CdSe material properties for optoelectronic applications.

Investigations of DC power supplies with optoelectronic transducers and RF energy converters

Science.gov (United States)

Guzowski, B.; Gozdur, R.; Bernacki, L.; Lakomski, M.

2016-04-01

Fiber Distribution Cabinets (FDC) monitoring systems are increasingly popular. However it is difficult to realize such system in passive FDC, due to lack of source of power supply. In this paper investigation of four different DC power supplies with optoelectronic transducers is described. Two converters: photovoltaic power converter and PIN photodiode can convert the light transmitted through the optical fiber to electric energy. Solar cell and antenna RF-PCB are also tested. Results presented in this paper clearly demonstrate that it is possible to build monitoring system in passive FDC. During the tests maximum obtained output power was 11 mW. However all converters provided enough power to excite 32-bit microcontroller with ARM-cores and digital thermometer.

Brownian motion properties of optoelectronic random bit generators based on laser chaos.

Science.gov (United States)

Li, Pu; Yi, Xiaogang; Liu, Xianglian; Wang, Yuncai; Wang, Yongge

2016-07-11

The nondeterministic property of the optoelectronic random bit generator (RBG) based on laser chaos are experimentally analyzed from two aspects of the central limit theorem and law of iterated logarithm. The random bits are extracted from an optical feedback chaotic laser diode using a multi-bit extraction technique in the electrical domain. Our experimental results demonstrate that the generated random bits have no statistical distance from the Brownian motion, besides that they can pass the state-of-the-art industry-benchmark statistical test suite (NIST SP800-22). All of them give a mathematically provable evidence that the ultrafast random bit generator based on laser chaos can be used as a nondeterministic random bit source.

A self-starting hybrid optoelectronic oscillator generating ultra low jitter 10-GHz optical pulses and low phase noise electrical signals

DEFF Research Database (Denmark)

Lasri, J.; Bilenca, A.; Dahan, D.

2002-01-01

In this letter, we describe a self-starting optical pulse source generating ultra low noise 15-ps-wide pulses at 10 GHz. It is based on a hybrid optoelectronic oscillator comprising a fiber extended cavity mode-locked diode laser which injection locks a self-oscillating heterojunction bipolar...

Towards Flexible Transparent Electrodes Based on Carbon and Metallic Materials

Directory of Open Access Journals (Sweden)

Minghui Luo

2017-01-01

Full Text Available Flexible transparent electrodes (FTEs with high stability and scalability are in high demand for the extremely widespread applications in flexible optoelectronic devices. Traditionally, thin films of indium thin oxide (ITO served the role of FTEs, but film brittleness and scarcity of materials limit its further application. This review provides a summary of recent advances in emerging transparent electrodes and related flexible devices (e.g., touch panels, organic light-emitting diodes, sensors, supercapacitors, and solar cells. Mainly focusing on the FTEs based on carbon nanomaterials (e.g., carbon nanotubes and graphene and metal materials (e.g., metal grid and metal nanowires, we discuss the fabrication techniques, the performance improvement, and the representative applications of these highly transparent and flexible electrodes. Finally, the challenges and prospects of flexible transparent electrodes will be summarized.

Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges

Science.gov (United States)

Zhang, Wei

In this research project I have investigated AlGaN alloys and their quantum structures for applications in deep UV and terahertz optoelectronic devices. For the deep UV emitter applications the materials and devices were grown by rf plasma-assisted molecular beam epitaxy on 4H-SiC, 6H-SiC and c-plane sapphire substrates. In the growth of AlGaN/AlN multiple quantum wells on SiC substrates, the AlGaN wells were grown under excess Ga, far beyond than what is required for the growth of stoichiometric AlGaN films, which resulted in liquid phase epitaxy growth mode. Due to the statistical variations of the excess Ga on the growth front we found that this growth mode leads to films with lateral variations in the composition and thus, band structure potential fluctuations. Transmission electron microscopy shows that the wells in such structures are not homogeneous but have the appearance of quantum dots. We find by temperature dependent photoluminescence measurements that the multiple quantum wells with band structure potential fluctuations emit at 240 nm and have room temperature internal quantum efficiency as high as 68%. Furthermore, they were found to have a maximum net modal optical gain of 118 cm-1 at a transparency threshold corresponding to 1.4 x 1017 cm-3 excited carriers. We attribute this low transparency threshold to population inversion of only the regions of the potential fluctuations rather than of the entire matrix. Some prototype deep UV emitting LED structures were also grown by the same method on sapphire substrates. Optoelectronic devices for terahertz light emission and detection, based on intersubband transitions in III-nitride semiconductor quantum wells, were grown on single crystal c-plane GaN substrates. Growth conditions such the ratio of group III to active nitrogen fluxes, which determines the appropriate Ga-coverage for atomically smooth growth without requiring growth interruptions were employed. Emitters designed in the quantum cascade

Optimization of light out-coupling in optoelectronic devices using nanostructured surface

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

C and GaN, these developed methods could be applied to other semicon ductors such as Si, etc. Furthermore, all optoelectronic devices having an optical interface such as solar cells, photo - detectors, could benefit from these developed methods for opto - electronic performance improvement....... the overall efficiency of the LEDs. In this paper we have developed various methods for two important semiconductors: silicon carbide (SiC) and gallium nitride (GaN), and demonstrated enormous extraction efficiency enhancement. SiC is an important su bstrate for LED devices. It has refractive index of 2.......6, and only a few percent of light could escape from it. We have developed periodic nanocone structures by using electron - beam lithography, periodic nanodome structures by using nanosphere lithography, random nanostructures by using self - assembled metal nanoparticles, and random nanostructures by directly...

Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

KAUST Repository

Eita, Mohamed S.

2016-08-04

An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

1st International Conference on Opto-Electronics and Applied Optics

CERN Document Server

Bhattacharya, Indrani

2015-01-01

The Proceedings of First International Conference on Opto-Electronics and Applied Optics 2014, IEM OPTRONIX 2014 presents the research contributions presented in the conference by researchers from both India and abroad. Contributions from established scientists as well as students are included. The book is organized to enable easy access to various topics of interest.   The first part includes the Keynote addresses by Phillip Russell, Max Planck Institute of the Light Sciences, Erlangen, Germany and Lorenzo Pavesi, University of Trento, Italy.   The second part focuses on the Plenary Talks given by eminent scientists, namely, Azizur Rahman, City University London, London; Bishnu Pal, President, The Optical Society of India; Kamakhya Ghatak, National Institute of Technology, Agartala; Kehar Singh, Former Professor, India Institute of Technology Delhi; Mourad Zghal, SUPCOM, University of Carthage, Tunisia; Partha Roy Chaudhuri, IIT Kharagpur; S K. Bhadra, CSIR-Central Glass and Ceramic Research Institute, Kol...

A spin-optoelectronic detector for the simultaneous measurement of the degree of circular polarization and intensity of a laser beam

International Nuclear Information System (INIS)

Khamari, Shailesh K.; Porwal, S.; Oak, S. M.; Sharma, T. K.

2015-01-01

Simultaneous measurement of the degree of circular polarization and intensity of a laser beam is essential in advanced photonic applications. However, it is not feasible with conventional helicity dependent detectors where an additional detector is needed to measure the intensity. Here, we report the development of a spin-optoelectronic detector that can measure the degree of circular polarization and the intensity of a laser beam simultaneously. The principle of operation of device is based on the two independent fundamental phenomena occurring in Au/InP hybrid structures, namely, Inverse Spin Hall Effect (ISHE) and the Photo-Voltaic (PV) Effect. The magnitude of ISHE and PV signals is simultaneously measured across the two pairs of contacts that are made on the top of device. No cross talk is observed between the two detectors made on the same chip. The all-electronic compact device is fast, operates at room temperature, and opens up the possibility of many applications in an integrated optoelectronic platform

Radiative sky cooling: fundamental physics, materials, structures, and applications

Directory of Open Access Journals (Sweden)

Sun Xingshu

2017-07-01

Full Text Available Radiative sky cooling reduces the temperature of a system by promoting heat exchange with the sky; its key advantage is that no input energy is required. We will review the origins of radiative sky cooling from ancient times to the modern day, and illustrate how the fundamental physics of radiative cooling calls for a combination of properties that may not occur in bulk materials. A detailed comparison with recent modeling and experiments on nanophotonic structures will then illustrate the advantages of this recently emerging approach. Potential applications of these radiative cooling materials to a variety of temperature-sensitive optoelectronic devices, such as photovoltaics, thermophotovoltaics, rectennas, and infrared detectors, will then be discussed. This review will conclude by forecasting the prospects for the field as a whole in both terrestrial and space-based systems.

Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

Science.gov (United States)

2014-01-01

Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants. PMID:25253644

Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

KAUST Repository

Douglas, Jessica D.

2014-05-12

Solution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices to display high open-circuit voltages (>0.85 V) and generate significant charge carriers through hole transfer in addition to the electron-transfer pathway, which is common in fullerene-based devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Proposal for the award of a contract for the supply of analogue optoelectronic receiver modules for the CMS tracker

CERN Document Server

2001-01-01

This document concerns the award of a contract for the supply of 12-channel analogue optoelectronic receiver modules for the CMS Tracker. Following a market survey carried out among 56 firms in seventeen Member States and four firms in two non-Member States, a call for tenders (IT-2810/EP/CMS) was sent on 29 June 2001 to one firm in a Member State and one firm in a non-Member State. By the closing date, CERN had received one tender. The Finance Committee is invited to agree to the negotiation of a contract with NGK INSULATORS (JP), the only bidder, for the supply of 4500 units of 12-channel analogue optoelectronic receiver modules for a total amount of 228 485 949 Japanese yen, not subject to revision until 31 December 2003. At the rate of exchange stipulated in the tender, this amount is equivalent to approximately 3 110 500 Swiss francs. CERN's contribution to the total cost is 1 863 967 Swiss francs. The firm has indicated the following distribution by country of the contract value covered by this adjudica...

Correlation of surface contour, optoelectronic and spectroscopic properties of Cu(In,Ga)Se{sub 2} by SNOM and AFM

Energy Technology Data Exchange (ETDEWEB)

Neumann, Oliver; Heise, Stephan J.; Brueggemann, Rudolf; Meessen, Max; Bauer, Gottfried H. [Institute of Physics, Carl von Ossietzky University Oldenburg (Germany); Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

2012-07-01

Chalcopyrite absorbers exhibit local fluctuations of structural, optical and optoelectronic properties. We study the correlation of the surface contour and the local properties such as the integrated photoluminescence (PL) yield and the splitting of the quasi-Fermi levels in a Cu(In,Ga)Se{sub 2}-based thin-film system at room temperature by AFM and spatially resolved PL measurements at the identical position with a scanning near-field optical microscope (SNOM). The Cu(In,Ga)Se{sub 2} layer is deposited on glass, etched with bromine-methanol to smooth the surface for a more homogeneous incoupling of laser light, and passivated with cadmium sulfide. Our measurements reveal a high structural correlation between surface contour, integrated PL yield and quasi-Fermi level splitting. Additionally, we observe trenches in the surface contour which correspond to a dip or to a peak in the splitting of the quasi-Fermi levels and integrated PL yield. Furthermore some trenches show spectral variation of the PL compared to their direct environment. We discuss these observations with respect to the optoelectronic property and the composition of the absorber.

Toward high-resolution optoelectronic retinal prosthesis

Science.gov (United States)

Palanker, Daniel; Huie, Philip; Vankov, Alexander; Asher, Alon; Baccus, Steven

2005-04-01

It has been already demonstrated that electrical stimulation of retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. Current retinal implants provide very low resolution (just a few electrodes), while several thousand pixels are required for functional restoration of sight. We present a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array with pixel density up to 2,500 pix/mm2 (geometrically corresponding to a visual acuity of 20/80), and allows for natural eye scanning rather than scanning with a head-mounted camera. The system operates similarly to "virtual reality" imaging devices used in military and medical applications. An image from a video camera is projected by a goggle-mounted infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. Such a system provides a broad field of vision by allowing for natural eye scanning. The goggles are transparent to visible light, thus allowing for simultaneous utilization of remaining natural vision along with prosthetic stimulation. Optical control of the implant allows for simple adjustment of image processing algorithms and for learning. A major prerequisite for high resolution stimulation is the proximity of neural cells to the stimulation sites. This can be achieved with sub-retinal implants constructed in a manner that directs migration of retinal cells to target areas. Two basic implant geometries are described: perforated membranes and protruding electrode arrays. Possibility of the tactile neural stimulation is also examined.

Contrast image formation based on thermodynamic approach and surface laser oxidation process for optoelectronic read-out system

Science.gov (United States)

Scherbak, Aleksandr; Yulmetova, Olga

2018-05-01

A pulsed fiber laser with the wavelength 1.06 μm was used to treat titanium nitride film deposited on beryllium substrates in the air with intensities below an ablation threshold to provide oxide formation. Laser oxidation results were predicted by the chemical thermodynamic method and confirmed by experimental techniques (X-ray diffraction). The developed technology of contrast image formation is intended to be used for optoelectronic read-out system.

Hybrid optoelectronic device with multiple bistable outputs

Energy Technology Data Exchange (ETDEWEB)

Costazo-Caso, Pablo A; Jin Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.are, E-mail: granieri@rose-hulma.edu, E-mail: siahmako@rose-hulma.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

2011-01-01

Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

Photophysical Properties of Novel Organic, Inorganic, and Hybrid Semiconductor Materials

Science.gov (United States)

Chang, Angela Yenchi

For the past 200 years, novel materials have driven technological progress, and going forward these advanced materials will continue to deeply impact virtually all major industrial sectors. Therefore, it is vital to perform basic and applied research on novel materials in order to develop new technologies for the future. This dissertation describes the results of photophysical studies on three novel materials with electronic and optoelectronic applications, namely organic small molecules DTDCTB with C60 and C70, colloidal indium antimonide (InSb) nanocrystals, and an organic-inorganic hybrid perovskite with the composition CH3NH3PbI 3-xClx, using transient absorption (TA) and photoluminescence (PL) spectroscopy. In chapter 2, we characterize the timescale and efficiency of charge separation and recombination in thin film blends comprising DTDCTB, a narrow-band gap electron donor, and either C60 or C70 as an electron acceptor. TA and time-resolved PL studies show correlated, sub-picosecond charge separation times and multiple timescales of charge recombination. Our results indicate that some donors fail to charge separate in donor-acceptor mixed films, which suggests material manipulations may improve device efficiency. Chapter 3 describes electron-hole pair dynamics in strongly quantum-confined, colloidal InSb nanocrystal quantum dots. For all samples, TA shows a bleach feature that, for several picoseconds, dramatically red-shifts prior to reaching a time-independent position. We suggest this unusual red-shift relates transient population flow through two energetically comparable conduction band states. From pump-power-dependent measurements, we also determine biexciton lifetimes. In chapter 4, we examine carrier dynamics in polycrystalline methylammonium lead mixed halide perovskite (CH3NH3PbI3-xCl x) thin films as functions of temperature and photoexcitation wavelength. At room temperature, the long-lived TA signals stand in contrast to PL dynamics, where the

Perovskite Materials for Light-Emitting Diodes and Lasers.

Science.gov (United States)

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

Science.gov (United States)

Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

2017-12-01

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

Hybrid functional calculations of potential hydrogen storage material: Complex dimagnesium iron hydride

KAUST Repository

Ul Haq, Bakhtiar

2014-06-01

By employing the state of art first principles approaches, comprehensive investigations of a very promising hydrogen storage material, Mg 2FeH6 hydride, is presented. To expose its hydrogen storage capabilities, detailed structural, elastic, electronic, optical and dielectric aspects have been deeply analysed. The electronic band structure calculations demonstrate that Mg2FeH6 is semiconducting material. The obtained results of the optical bandgap (4.19 eV) also indicate that it is a transparent material for ultraviolet light, thus demonstrating its potential for optoelectronics application. The calculated elastic properties reveal that Mg2FeH6 is highly stiff and stable hydride. Finally, the calculated hydrogen (H2) storage capacity (5.47 wt.%) within a reasonable formation energy of -78 kJ mol-1, at room temperature, can be easily achievable, thus making Mg2FeH6 as potential material for practical H2 storage applications. Copyright © 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

Controlling microstructure of pentacene derivatives by solution processing: impact of structural anisotropy on optoelectronic properties.

Science.gov (United States)

James, David T; Frost, Jarvist M; Wade, Jessica; Nelson, Jenny; Kim, Ji-Seon

2013-09-24

The consideration of anisotropic structural properties and their impact on optoelectronic properties in small-molecule thin films is vital to understand the performance of devices incorporating crystalline organic semiconductors. Here we report on the important relationship between structural and optoelectronic anisotropy in aligned, functionalized-pentacene thin films fabricated using the solution-based zone-casting technique. The microstructure of thin films composed of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and 6,13-bis(triethylsilylethynyl)pentacene (TES-pentacene) is systematically controlled by varying the casting speed. By controlling the structural alignment, we were able to experimentally decouple, for the first time in these films, an intramolecular absorption transition dipole (at ∼440 nm) oriented close to the pentacene short axis and an intermolecular absorption transition dipole (at ∼695 nm) oriented predominantly along the conjugated pentacene-pentacene core stacking axis (crystallographic a-axis) in both films. Using the intermolecular absorption as a signature for intermolecular delocalization, much higher optical dichroism was obtained in TES-pentacene (16 ± 6) than TIPS-pentacene (3.2 ± 0.1), which was attributed to the 1D packing structure of TES-pentacene compared to the 2D packing structure of TIPS-pentacene. This result was also supported by field-effect mobility anisotropy measurements of the films, with TES-pentacene exhibiting a higher anisotropy (∼21-47, depending on the casting speed) than TIPS-pentacene (∼3-10).

Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

International Nuclear Information System (INIS)

Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

2017-01-01

Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

Investigation on the learning interest of senior undergraduate students in optoelectronics specialty

Science.gov (United States)

Wu, Shenjiang; Wang, Na; Li, Dangjuan; Liu, Chanlao

2017-08-01

With the increasing number of the graduate students, many of them have some troubles in job finding. This situation make a huge pressure on the senior students and loss them the interesting in study. This work investigate the reasons by questionnaire survey, panel discussion, interview, etc. to achieve the factors influence their learning interesting. The main reason of students do not have the motivation on study is that they do not understand the development and competition of photoelectric specialty, lack of innovation and entrepreneurship training, hysteresis of the learning knowledge and practical application. Finally, the paper gives some suggestions through teaching reform on how to improve students' learning enthusiasm. This work will contribute to the teaching and training of senior undergraduate students of optoelectronics specialty.

The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

Science.gov (United States)

Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

2016-09-01

Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

3rd International Conference on Opto-Electronics and Applied Optics

CERN Document Server

Chakrabarti, Satyajit; Reehal, Haricharan; Lakshminarayanan, Vasudevan

2017-01-01

The Proceedings of 3rd International Conference on Opto-Electronics and Applied Optics, OPTRONIX 2016 is an effort to promote and present the research works by scientists and researchers including students in India and abroad in the area of Green Photonics and other related areas as well as to raise awareness about the recent trends of research and development in the area of the related fields. The book has been organized in such a way that it will be easier for the readers to go through and find out the topic of their interests. The first part includes the Keynote addresses by Rajesh Gupta, Department of Energy Science and Engineering, Indian Institute of Technology, Bombay; P.T. Ajith Kumar, President and Leading Scientist Light Logics Holography and Optics, Crescent Hill, Trivandrum, Kerala; and K.K. Ghosh, Institute of Engineering & Management, Kolkata, India.  The second part focuses on the Plenary and Invited Talks given by eminent scientists namely, Vasudevan Lakshminarayanan, University of Wate...

Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

Science.gov (United States)

Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

2017-07-01

Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

Excited state and charge-carrier dynamics in perovskite solar cell materials

Science.gov (United States)

Ponseca, Carlito S., Jr.; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G.

2016-02-01

Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research.

Gas sensing in 2D materials

Science.gov (United States)

Yang, Shengxue; Jiang, Chengbao; Wei, Su-huai

2017-06-01

Two-dimensional (2D) layered inorganic nanomaterials have attracted huge attention due to their unique electronic structures, as well as extraordinary physical and chemical properties for use in electronics, optoelectronics, spintronics, catalysts, energy generation and storage, and chemical sensors. Graphene and related layered inorganic analogues have shown great potential for gas-sensing applications because of their large specific surface areas and strong surface activities. This review aims to discuss the latest advancements in the 2D layered inorganic materials for gas sensors. We first elaborate the gas-sensing mechanisms and introduce various types of gas-sensing devices. Then, we describe the basic parameters and influence factors of the gas sensors to further enhance their performance. Moreover, we systematically present the current gas-sensing applications based on graphene, graphene oxide (GO), reduced graphene oxide (rGO), functionalized GO or rGO, transition metal dichalcogenides, layered III-VI semiconductors, layered metal oxides, phosphorene, hexagonal boron nitride, etc. Finally, we conclude the future prospects of these layered inorganic materials in gas-sensing applications.

Extreme conditions synthesis, processing and characterization of metal-nitrides and alloys of mechanical and optoelectronic importance

International Nuclear Information System (INIS)

Serghiou, G; McGaff, A J; Russell, N; Morniroli, J P; Frost, D J; Odling, N; Boehler, R; Troadec, D; Lathe, C

2010-01-01

High density nitrides and group IV alloys are of growing importance for both ceramic and optoelectronic applications. We present here new data and processes in our ongoing preparation of alkaline earth and transition metal nitrides as well as group IV alloys, here, up to 25 GPa and 2300 K. We employ large volume and laser-heated diamond anvil cell techniques for synthesis, processing tools including focused ion beam, and synchrotron X-ray diffraction, transmission electron microscopy and scanning electron microscopy for characterization.

Effect of Coulomb interactions and Hartree-Fock exchange on structural, elastic, optoelectronic and magnetic properties of Co{sub 2}MnSi Heusler: A comparative study

Energy Technology Data Exchange (ETDEWEB)

Lantri, T. [Laboratory of Technology and Solid’s Properties, Faculty of Sciences and Technology, Abdelhamid Ibn Badis University, BP 227, Mostaganem 27000 (Algeria); Bentata, S., E-mail: sam_bentata@yahoo.com [Laboratory of Technology and Solid’s Properties, Faculty of Sciences and Technology, Abdelhamid Ibn Badis University, BP 227, Mostaganem 27000 (Algeria); Bouadjemi, B.; Benstaali, W. [Laboratory of Technology and Solid’s Properties, Faculty of Sciences and Technology, Abdelhamid Ibn Badis University, BP 227, Mostaganem 27000 (Algeria); Bouhafs, B. [Modelling and Simulation in Materials Science Laboratory, Djillali Liabès University of Sidi Bel-Abbès, 22000 Sidi Bel-Abbes (Algeria); Abbad, A. [Laboratory of Technology and Solid’s Properties, Faculty of Sciences and Technology, Abdelhamid Ibn Badis University, BP 227, Mostaganem 27000 (Algeria); Modelling and Simulation in Materials Science Laboratory, Djillali Liabès University of Sidi Bel-Abbès, 22000 Sidi Bel-Abbes (Algeria); Zitouni, A. [Laboratory of Technology and Solid’s Properties, Faculty of Sciences and Technology, Abdelhamid Ibn Badis University, BP 227, Mostaganem 27000 (Algeria)

2016-12-01

Using the first-principle calculations, we have investigated the structural, elastic, optoelectronic and magnetic properties of Co{sub 2}MnSi Heusler alloy. Based on the density functional theory (DFT) and hiring the full-potential linearized augmented plane wave (FP-LAPW) method, we have used five approaches: the Hybrid on-site exact exchange, the Local Spin Density Approximation (LSDA), the LSDA+U, the Generalized Gradient Approximation GGA and GGA+U; where the Hubbard on-site Coulomb interaction correction U is calculated by constraint local density approximation for Co and Mn atoms. Our results show that the highly-ordered Co{sub 2}MnSi alloy is a ductile, stiff and anisotropic material. It has a half-metallic ferromagnetic character with an integer magnetic moment of 5 µB which is in good agreement with the Slater-Pauling rule. - Highlights: • Each approach gives a half magnetic compound. • EECE gives the largest gap. • Elastic properties show a stiff, ductile and anisotropic material. • Electronic properties are similar for the five approaches. • Total magnetic moment is the same for the five approaches (5 µB).

6th conference on Advances in Optoelectronics and Micro/nano-optics

International Nuclear Information System (INIS)

2017-01-01

The 6th Conference on Advances in Optoelectronics and Micro/nano-optics (AOM 2017) Nanjing, China April 23 - 26, 2017 Conference Co-Chairs: Yiping Cui - Southeast University, China Xiaocong Yuan - Shenzhen University, China Shining Zhu - Nanjing University, China WELCOME Journal of physics: Conference Series is publishing a volume of conference proceedings that contains a selection of papers presented at the 6 th Conference on Advances in Optoelectronics and Micro/nano-optics (AOM 2017), which is an OSA topical meeting that started in 2009. AOM 2017, organized by The Optical Society of America, Southeast University, and Jiangsu Optical Society, was successfully held at Nanjing, China from April 23 th -26 th , 2017. It aims to bring together leading academic scientists, researchers and scholars to exchange and share their experience and research results on all aspects of optoelectronics and micro/nano-optics, and to discuss the practical challenges encountered and the solutions adopted. Located in Yangtze River Delta area and the center of east China, Nanjing is the capital of Jiangsu province and the second largest city in the east China region, turned out to be an ideal meeting place for domestic and overseas participants of this international conference. The conference program included plenary talks, invited talks, oral and poster contributions. From numerous submissions, 64 of the most promising and IOP-relevant contributions were included in this volume. The submissions present original ideas or results of general significance, supported by clear reasoning, compelling evidence relevant to the research. The authors state clearly the problems and the significance of their research to theory and practice. Being a successful conference, this event gathered more than 300 qualified and high-level researchers and experts, which created a good platform for worldwide researchers and engineers to enjoy the academic communication. Taking advantage of this opportunity, we

p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

International Nuclear Information System (INIS)

Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

2013-01-01

Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm 2 V −1 s −1 and a hole concentration of 1.67 × 10 17  cm −3 , respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application

Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

DEFF Research Database (Denmark)

Ding, Yunhong; Zhu, Xiaolong; Xiao, Sanshui

2015-01-01

Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of the Fermi level enables electro-optical modula......Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of the Fermi level enables electro...... with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage....

LiNbO3 :Pr3+ : A Multipiezo Material with Simultaneous Piezoelectricity and Sensitive Piezoluminescence.

Science.gov (United States)

Tu, Dong; Xu, Chao-Nan; Yoshida, Akihito; Fujihala, Masayoshi; Hirotsu, Jou; Zheng, Xu-Guang

2017-06-01

Red-emitting piezoluminescence (elasticoluminescence) is achieved by doping rare earth Pr 3+ into the well-known piezoelectric matrix, LiNbO 3 . By precisely tuning the Li/Nb ratio in nonstoichiometric Li x NbO 3 :Pr 3+ , a material that exhibits an unusually high piezoluminescence intensity, which far exceeds that of any well-known piezoelectric material, is produced. Li x NbO 3 :Pr 3+ shows excellent strain sensitivity at the lowest strain level, with no threshold for stress sensing. These multipiezo properties of sensitive piezoluminescence in a piezoelectric matrix are ideal for microstress sensing, damage diagnosis, electro-mechano-optical energy conversion, and multifunctional control in optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Beyond Donor-Acceptor (D-A) Approach: Structure-Optoelectronic Properties-Organic Photovoltaic Performance Correlation in New D-A1 -D-A2 Low-Bandgap Conjugated Polymers.

Science.gov (United States)

Chochos, Christos L; Drakopoulou, Sofia; Katsouras, Athanasios; Squeo, Benedetta M; Sprau, Christian; Colsmann, Alexander; Gregoriou, Vasilis G; Cando, Alex-Palma; Allard, Sybille; Scherf, Ullrich; Gasparini, Nicola; Kazerouni, Negar; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-04-01

Low-bandgap near-infrared polymers are usually synthesized using the common donor-acceptor (D-A) approach. However, recently polymer chemists are introducing more complex chemical concepts for better fine tuning of their optoelectronic properties. Usually these studies are limited to one or two polymer examples in each case study so far, though. In this study, the dependence of optoelectronic and macroscopic (device performance) properties in a series of six new D-A 1 -D-A 2 low bandgap semiconducting polymers is reported for the first time. Correlation between the chemical structure of single-component polymer films and their optoelectronic properties has been achieved in terms of absorption maxima, optical bandgap, ionization potential, and electron affinity. Preliminary organic photovoltaic results based on blends of the D-A 1 -D-A 2 polymers as the electron donor mixed with the fullerene derivative [6,6]-phenyl-C 71 -butyric acid methyl ester demonstrate power conversion efficiencies close to 4% with short-circuit current densities (J sc ) of around 11 mA cm -2 , high fill factors up to 0.70, and high open-circuit voltages (V oc s) of 0.70 V. All the devices are fabricated in an inverted architecture with the photoactive layer processed in air with doctor blade technique, showing the compatibility with roll-to-roll large-scale manufacturing processes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optoelectronic engineering of colloidal quantum-dot solar cells beyond the efficiency black hole: a modeling approach

Science.gov (United States)

Mahpeykar, Seyed Milad; Wang, Xihua

2017-02-01

Colloidal quantum dot (CQD) solar cells have been under the spotlight in recent years mainly due to their potential for low-cost solution-processed fabrication and efficient light harvesting through multiple exciton generation (MEG) and tunable absorption spectrum via the quantum size effect. Despite the impressive advances achieved in charge carrier mobility of quantum dot solids and the cells' light trapping capabilities, the recent progress in CQD solar cell efficiencies has been slow, leaving them behind other competing solar cell technologies. In this work, using comprehensive optoelectronic modeling and simulation, we demonstrate the presence of a strong efficiency loss mechanism, here called the "efficiency black hole", that can significantly hold back the improvements achieved by any efficiency enhancement strategy. We prove that this efficiency black hole is the result of sole focus on enhancement of either light absorption or charge extraction capabilities of CQD solar cells. This means that for a given thickness of CQD layer, improvements accomplished exclusively in optic or electronic aspect of CQD solar cells do not necessarily translate into tangible enhancement in their efficiency. The results suggest that in order for CQD solar cells to come out of the mentioned black hole, incorporation of an effective light trapping strategy and a high quality CQD film at the same time is an essential necessity. Using the developed optoelectronic model, the requirements for this incorporation approach and the expected efficiencies after its implementation are predicted as a roadmap for CQD solar cell research community.

5. International conference on materials science and condensed matter physics and symposium 'Electrical methods of materials treatment'. Abstracts

International Nuclear Information System (INIS)

2010-09-01

This book includes abstracts of the communications presented at the 5th International Conference on Materials Science and Condensed-Matter Physics and at the Symposium dedicated to the 100th anniversary of academician Boris Lazarenko, the prominent scientist and inventor, the first director of the Institute of Applied Physics of the Academy of Sciences of Moldova. The abstracts presented in the book cover a vast range of subjects, such as: advanced materials and fabrication processes; methods of crystal growth, post-growth technological processes, doping and implantation, fabrication of solid state structures; defect engineering, engineering of molecular assembly; methods of nanostructures and nano materials fabrication and characterization; quantum wells and superlattices; nano composite, nanowires and nano dots; fullerenes and nano tubes, molecular materials, meso- and nano electronics; methods of material and structure characterization; structure and mechanical characterization; optical, electrical, magnetic and superconductor properties, transport processes, nonlinear phenomena, size and interface effects; advances in condensed matter theory; theory of low dimensional systems; modelling of materials and structure properties; development of theoretical methods of solid-state characterization; phase transition; advanced quantum physics for nano systems; device modelling and simulation, device structures and elements; micro- and optoelectronics; photonics; microsensors and micro electro-mechanical systems; microsystems; degradation and reliability, solid-state device design; theory and advanced technologies of electro-physico-chemical and combined methods of materials machining and treatment, including modification of surfaces; theory and advanced technologies of using electric fields, currents and discharges so as to intensify heat mass-transfer, to raise the efficiency of treatment of materials, of biological preparations and foodstuff; modern equipment for

Optoelectronic study and annealing stability of room temperature pulsed laser ablated ZnSe polycrystalline thin films

Energy Technology Data Exchange (ETDEWEB)

Khan, Taj Muhammad, E-mail: tajakashne@gmail.com; Zakria, M.; Ahmad, Mushtaq; Shakoor, Rana I.

2014-03-15

increased from 2.65 eV to 2.7 eV for the annealed crystalline film at 350 °C which was further decreased to 2.56 eV for the annealed amorphous film at 400 °C. The observed results manifested that room temperature pulsed laser ablated ZnSe thin film showed excellent structural, optical and morphological stability up 350 °C for optoelectronic applications. -- Highlights: • Room temperature synthesis of ZnSe thin film by PLD. • Annealing effect on Raman scattering of the deposited material. • Optical properties. • Structural properties. • Semiconductor nanostructures.

Curriculum design and German student exchange for Sino-German Bachelor program majored in optoelectronics engineering

Science.gov (United States)

Zheng, Jihong; Fuhrmann, Thomas; Xu, Boqing; Schreiner, Rupert; Jia, Hongzhi; Zhang, Wei; Wang, Ning; Seebauer, Gudrun; Zhu, Jiyan

2017-08-01

Different higher education backgrounds in China and Germany led to challenges in the curriculum design at the beginning of our cooperative bachelor program in Optoelectronics Engineering. We see challenges in different subject requirements from both sides and in the German language requirements for Chinese students. The curriculum was optimized according to the ASIIN criteria, which makes it acceptable and understandable by both countries. German students are integrated into the Chinese class and get the same lectures like their Chinese colleagues. Intercultural and curriculum challenges are successfully solved. The results are summarized to provide an example for other similar international programs.

Excited state and charge-carrier dynamics in perovskite solar cell materials

International Nuclear Information System (INIS)

Ponseca, Carlito S Jr; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G

2016-01-01

Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research. (topical review)

An ultraviolet photodetector fabricated from WO3 nanodiscs/reduced graphene oxide composite material

International Nuclear Information System (INIS)

Shao Dali; Sawyer, Shayla; Yu Mingpeng; Lian Jie

2013-01-01

A high sensitivity, fast ultraviolet (UV) photodetector was fabricated from WO 3 nanodiscs (NDs)/reduced graphene oxide (RGO) composite material. The WO 3 NDs/reduced GO composite material was synthesized using a facile three-step synthesis procedure. First, the Na 2 WO 4 /GO precursor was synthesized by homogeneous precipitation. Second, the Na 2 WO 4 /GO precursor was transformed into H 2 WO 4 /GO composites by acidification. Finally, the H 2 WO 4 /GO composites were reduced to WO 3 NDs/RGO via a hydrothermal reduction process. The UV photodetector showed a fast transient response and high responsivity, which are attributed to the improved carrier transport and collection efficiency through graphene. The excellent material properties of the WO 3 NDs/RGO composite demonstrated in this work may open up new possibilities for using WO 3 NDs/RGO for future optoelectronic applications. (paper)

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

International Nuclear Information System (INIS)

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

2005-01-01

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO 3 ) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000 deg. C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO 3 , producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN/GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO 3 modulators on compact optoelectronic/electronic chips

Nonlinear Optics with 2D Layered Materials.

Science.gov (United States)

Autere, Anton; Jussila, Henri; Dai, Yunyun; Wang, Yadong; Lipsanen, Harri; Sun, Zhipei

2018-03-25

2D layered materials (2DLMs) are a subject of intense research for a wide variety of applications (e.g., electronics, photonics, and optoelectronics) due to their unique physical properties. Most recently, increasing research efforts on 2DLMs are projected toward the nonlinear optical properties of 2DLMs, which are not only fascinating from the fundamental science point of view but also intriguing for various potential applications. Here, the current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g., mixed-dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed. Several potential perspectives and possible future research directions of these promising nanomaterials for nonlinear optics are also presented. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

State-of-the-art Sn2+-based ternary oxides as photocatalysts for water splitting: electronic structures and optoelectronic properties

KAUST Repository

Noureldine, Dalal

2016-09-19

Developing visible light responsive metal oxide photocatalysts is a challenge that must be conquered to achieve high efficiency for water splitting or hydrogen evolution reactions. Valence band engineering is possible by forming ternary oxides using the combination of a metal cation with an s2d10 electronic configuration and a transition metal oxide with a d0 configuration. Many (Sn2+, Bi3+, Pb2+)-based ternary metal oxide photocatalysts have been reported for hydrogen and/or oxygen evolution under visible irradiation. Sn2+-based materials have attracted particular attention because tin is inexpensive, abundant and more environmentally friendly than lead or bismuth. In this review, we provide a fruitful library for Sn2+-based photocatalysts that have been reported to evolve hydrogen using sacrificial reagents, including SnNb2O6, Sn2Nb2O7, SnTaxNb2−xO6, SnTa2O6, Sn2Ta2O7, SnWO4 (α and β phases), SnSb2O6·nH2O, and Sn2TiO4. The synthesis method used in the literature and the resultant morphology and crystal structure of each compound are discussed. The density functional theory (DFT) calculations of the electronic structure and density of states are provided, and the consequent optoelectronic properties such as band gap, nature of the bandgap, dielectric constant, and effective masses are summarized. This review will help highlight the main challenges for Sn2+-based materials.

State-of-the-art Sn2+-based ternary oxides as photocatalysts for water splitting: electronic structures and optoelectronic properties

KAUST Repository

Noureldine, Dalal; Takanabe, Kazuhiro

2016-01-01

Developing visible light responsive metal oxide photocatalysts is a challenge that must be conquered to achieve high efficiency for water splitting or hydrogen evolution reactions. Valence band engineering is possible by forming ternary oxides using the combination of a metal cation with an s2d10 electronic configuration and a transition metal oxide with a d0 configuration. Many (Sn2+, Bi3+, Pb2+)-based ternary metal oxide photocatalysts have been reported for hydrogen and/or oxygen evolution under visible irradiation. Sn2+-based materials have attracted particular attention because tin is inexpensive, abundant and more environmentally friendly than lead or bismuth. In this review, we provide a fruitful library for Sn2+-based photocatalysts that have been reported to evolve hydrogen using sacrificial reagents, including SnNb2O6, Sn2Nb2O7, SnTaxNb2−xO6, SnTa2O6, Sn2Ta2O7, SnWO4 (α and β phases), SnSb2O6·nH2O, and Sn2TiO4. The synthesis method used in the literature and the resultant morphology and crystal structure of each compound are discussed. The density functional theory (DFT) calculations of the electronic structure and density of states are provided, and the consequent optoelectronic properties such as band gap, nature of the bandgap, dielectric constant, and effective masses are summarized. This review will help highlight the main challenges for Sn2+-based materials.

CMOS On-Chip Optoelectronic Neural Interface Device with Integrated Light Source for Optogenetics

International Nuclear Information System (INIS)

Sawadsaringkarn, Y; Kimura, H; Maezawa, Y; Nakajima, A; Kobayashi, T; Sasagawa, K; Noda, T; Tokuda, T; Ohta, J

2012-01-01

A novel optoelectronic neural interface device is proposed for target applications in optogenetics for neural science. The device consists of a light emitting diode (LED) array implemented on a CMOS image sensor for on-chip local light stimulation. In this study, we designed a suitable CMOS image sensor equipped with on-chip electrodes to drive the LEDs, and developed a device structure and packaging process for LED integration. The prototype device produced an illumination intensity of approximately 1 mW with a driving current of 2.0 mA, which is expected to be sufficient to activate channelrhodopsin (ChR2). We also demonstrated the functions of light stimulation and on-chip imaging using a brain slice from a mouse as a target sample.

Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

KAUST Repository

Khan, Jafar Iqbal

2016-03-03

Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials\\' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.