Sample records for optoelectronic materials

  1. Materials for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Shiang, Joseph John; Smigelski, Jr., Paul Michael


    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  2. Organic optoelectronics:materials,devices and applications

    Institute of Scientific and Technical Information of China (English)

    LIU Yi; CUI Tian-hong


    The interest in organic materials for optoelectronic devices has been growing rapidly in the last two decades. This growth has been propelled by the exciting advances in organic thin films for displays, low-cost electronic circuits, etc. An increasing number of products employing organic electronic devices have become commercialized, which has stimulated the age of organic optoelectronics. This paper reviews the recent progress in organic optoelectronic technology. First, organic light emitting electroluminescent materials are introduced. Next, the three kinds of most important organic optoelectronic devices are summarized, including light emitting diode, organic photovoltaic cell, and photodetectors. The various applications of these devices are also reviewed and discussed in detail. Finally, the market and future development of optoelectronic devices are also demonstrated.

  3. Perovskite Materials: Solar Cell and Optoelectronic Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Bin [ORNL; Geohegan, David B [ORNL; Xiao, Kai [ORNL


    Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure, and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.

  4. Contemporary optoelectronics materials, metamaterials and device applications

    CERN Document Server

    Sukhoivanov, Igor


    This book presents a collection of extended contributions on the physics and application of optoelectronic materials and metamaterials.   The book is divided into three parts, respectively covering materials, metamaterials and optoelectronic devices.  Individual chapters cover topics including phonon-polariton interaction, semiconductor and nonlinear organic materials, metallic, dielectric and gyrotropic metamaterials, singular optics, parity-time symmetry, nonlinear plasmonics, microstructured optical fibers, passive nonlinear shaping of ultrashort pulses, and pulse-preserving supercontinuum generation. The book contains both experimental and theoretical studies, and each contribution is a self-contained exposition of a particular topic, featuring an extensive reference list.  The book will be a useful resource for graduate and postgraduate students, researchers and engineers involved in optoelectronics/photonics, quantum electronics, optics, and adjacent areas of science and technology.

  5. Photoemission from optoelectronic materials and their nanostructures

    CERN Document Server

    Ghatak, Kamakhya Prasad; Bhattacharya, Sitangshu


    This monograph investigates photoemission from optoelectronic materials and their nanostructures. It contains open-ended research problems which form an integral part of the text and are useful for graduate courses as well as aspiring Ph.D.'s and researchers..

  6. Materials for optoelectronic devices, OEICs and photonics

    Energy Technology Data Exchange (ETDEWEB)

    Schloetterer, H.; Quillec, M.; Greene, P.D.; Bertolotti, M. (eds.)


    The aim of the contributors in this volume is to give a current overview on the basic properties of nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques from growth (LPE to MOMBE) and for processing from surface passivation to ion beams. Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic materials development, as well as indicating the growth techniques that will be in use around the year 2000.

  7. Multi-material optoelectronic fiber devices (United States)

    Sorin, F.; Yan, Wei; Volpi, Marco; Page, Alexis G.; Nguyen Dang, Tung; Qu, Y.


    The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In particular, the thermal drawing process has known a series of breakthroughs in recent years that have expanded the range of materials and architectures that can be engineered within uniform fibers. Of particular interest in this presentation will be optoelectronic fibers that integrate semiconductors electrically addressed by conducting materials. These long, thin and flexible fibers can intercept optical radiation, localize and inform on a beam direction, detect its wavelength and even harness its energy. They hence constitute ideal candidates for applications such as remote and distributed sensing, large-area optical-detection arrays, energy harvesting and storage, innovative health care solutions, and functional fabrics. To improve performance and device complexity, tremendous progresses have been made in terms of the integrated semiconductor architectures, evolving from large fiber solid-core, to sub-hundred nanometer thin-films, nano-filaments and even nanospheres. To bridge the gap between the optoelectronic fiber concept and practical applications however, we still need to improve device performance and integration. In this presentation we will describe the materials and processing approaches to realize optoelectronic fibers, as well as give a few examples of demonstrated systems for imaging as well as light and chemical sensing. We will then discuss paths towards practical applications focusing on two main points: fiber connectivity, and improving the semiconductor microstructure by developing scalable approaches to make fiber-integrated single-crystal nanowire based devices.

  8. Colloidal quantum dot materials for infrared optoelectronics (United States)

    Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.


    Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.

  9. Emissive polymeric materials for optoelectronic devices (United States)

    Shiang, Joseph John; Chichak, Kelly Scott; Cella, James Anthony; Lewis, Larry Neil; Janora, Kevin Henry


    Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

  10. A class of fascinating optoelectronic materials: Triarylboron compounds

    Institute of Scientific and Technical Information of China (English)


    Triarylboron compounds are significant optoelectronic materials due to their excellent emissive and electron-transport properties,and could be applied in organic light-emitting diodes as emissive and/or electron-transport layers.Triarylboron compounds have vacant pπ orbital and have received increasing interest as fluoride ion and cyanide ion sensors utilizing specific Lewis acid-base interaction.This review summarizes their structural characteristics,optical properties and applications in chemosensors for anions and optoelectronic devices developed in recent years and discusses the problems and prospects.

  11. Research and Development of Electronic and Optoelectronic Materials in China

    Institute of Scientific and Technical Information of China (English)



    A review on the research and development of electronic and optoelectronic materials in China, including the main scientific activities in this field, is presented. The state-of-the-arts and prospects of the electronic and optoelectronic materials in China are briefly introduced, such as those of silicon crystals, compound semiconductors, synthetic crystals, especially nonlinear optical crystals and rare-earth permanent magnets materials, etc. , with a greater emphasis on Chinese scientist's contributions to the frontier area of nanomaterials and nanostructures in the past few years. A new concept of the trip chemistry proposed by Dr. Liu Zhongfan from Peking University has also been described. Finally the possible research grants and the national policy to support the scientific research have been discussed.

  12. New composite materials for optoelectronic applications (United States)

    Iovu, M. S.; Buzurniuc, S. A.; Verlan, V. I.; Culeac, I. P.; Nistor, Yu. H.


    The problem of obtaining low cost but efficient luminescent materials is still actually. Data concerning fabrication and luminescent properties of new composite materials on the base of thenoyltrifluoroacetone (TTA) of Europium(III) (Eu(TTA)3) and chalcogenide glasses doped with rare earth ions and polymers are presented. The visible emission spectra of the composites on the base of Eu(TTA)3 structured with phenantroline (Eu(TTA)3Phen) and copolymer from styrene and butylmethacrylate (1:1)(SBMA) under the excitation with N2-laser (λ=337 nm) contain sharp emission bands located at 354, 415, 580, 587, 590, 596, 611.4, 616.5, 621, 652, 690, 700, 713 nm. The nature of the observed emission bands and the possible mechanisms of the radiative electron transition in the investigated composite materials are discussed.

  13. Photonics and optoelectronics of two-dimensional materials beyond graphene (United States)

    Ponraj, Joice Sophia; Xu, Zai-Quan; Chander Dhanabalan, Sathish; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang


    Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

  14. Graphene and Two-Dimensional Materials for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Andreas Bablich


    Full Text Available This article reviews optoelectronic devices based on graphene and related two-dimensional (2D materials. The review includes basic considerations of process technology, including demonstrations of 2D heterostructure growth, and comments on the scalability and manufacturability of the growth methods. We then assess the potential of graphene-based transparent conducting electrodes. A major part of the review describes photodetectors based on lateral graphene p-n junctions and Schottky diodes. Finally, the progress in vertical devices made from 2D/3D heterojunctions, as well as all-2D heterostructures is discussed.

  15. Electrical and optoelectronic properties of two-dimensional materials (United States)

    Wang, Qiaoming

    Electrical and optoelectronic properties of bulk semiconductor materials have been extensively explored in last century. However, when reduced to one-dimensional and two-dimensional, many semiconductors start to show unique electrical and optoelectronic behaviors. In this dissertation, electrical and optoelectronic properties of one-dimensional (nanowires) and two-dimensional semiconductor materials are investigated by various techniques, including scanning photocurrent microscopy, scanning Kelvin probe microscopy, Raman spectroscopy, photoluminescence, and finite-element simulations. In our work, gate-tunable photocurrent in ZnO nanowires has been observed under optical excitation in the visible regime, which originates from the nanowire/substrate interface states. This gate tunability in the visible regime can be used to enhance the photon absorption efficiency, and suppress the undesirable visible-light photodetection in ZnO-based solar cells. The power conversion efficiency of CuInSe2/CdS core-shell nanowire solar cells has been investigated. The highest power conversion efficiency per unit area/volume is achieved with core diameter of 50 nm and the thinnest shell thickness. The existence of the optimal geometrical parameters is due to a combined effect of optical resonances and carrier transport/dynamics. Significant current crowding in two-dimensional black phosphorus field-effect transistors has been found, which has been significantly underestimated by the commonly used transmission-line model. This current crowding can lead to Joule heating close to the contacts. New van der Waals metal-semiconductor junctions have been mechanically constructed and systematically studied. The photocurrent on junction area has been demonstrated to originate from the photothermal effect rather than the photovoltaic effect. Our findings suggest that a reasonable control of interface/surface state properties can enable new and beneficial functionalities in nanostructures. We

  16. Electronic and optoelectronic materials and devices inspired by nature. (United States)

    Meredith, P; Bettinger, C J; Irimia-Vladu, M; Mostert, A B; Schwenn, P E


    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  17. Electronic and optoelectronic materials and devices inspired by nature (United States)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.


    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  18. Computational evaluation of optoelectronic properties for organic/carbon materials. (United States)

    Shuai, Zhigang; Wang, Dong; Peng, Qian; Geng, Hua


    CONSPECTUS: Organic optoelectronic materials are used in a variety of devices, including light-emitting diodes, field-effect transistors, photovoltaics, thermoelectrics, spintronics, and chemico- and biosensors. The processes that determine the intrinsic optoelectronic properties occur either in the photoexcited states or within the electron-pumped charged species, and computations that predict these optical and electrical properties would help researchers design new materials. In this Account, we describe recent advances in related density functional theory (DFT) methods and present case studies that examine the efficiency of light emission, carrier mobility, and thermoelectric figures of merit by calculation of the electron-vibration couplings. First we present a unified vibrational correlation function formalism to evaluate the excited-state radiative decay rate constant kr, the nonradiative decay rate constant knr, the intersystem crossing rate constant kISC, and the optical spectra. The molecular parameters that appear in the formalism, such as the electronic excited-state energy, vibrational modes, and vibronic couplings, require extensive DFT calculations. We used experiments for anthracene at both low and ambient temperatures to benchmark the calculated photophysical parameters. In the framework of Fermi's golden rule, we incorporated the non-adiabatic coupling and the spin-orbit coupling to evaluate the phosphorescence efficiency and emission spectrum. Both of these are in good agreement with experimental results for anthracene and iridium compounds. Band electron scattering and relaxation processes within Boltzmann theory can describe charge transport in two-dimensional carbon materials and closely packed organic solids. For simplicity, we considered only the acoustic phonon scattering as modeled by the deformation potential approximation coupled with extensive DFT calculations for band structures. We then related the carrier mobility to the band

  19. Optoelectronic Organic MaterialsFrom Synthetic Point of View

    Institute of Scientific and Technical Information of China (English)

    LUH Tien-Yau


    @@ Most organic materials for optoelectronic applications are conjugated organic system. The burgeoning synthetic methodologies using organometallic catalysts or reagents have provided a powerful arsenal to design and synthesize new conjugated organic materials. It is particularly noteworthy that carbon-carbon bond formation involving a Csp2 or Csp at the reaction center can readily be achieved. For examples, cross-coupling reactions (e.g. Kumada-Corriu reaction, Stille reaction, and Suzuki reaction) are extremely powerful for the synthesis of Csp2-Csp2 single bond. Sonogashira reaction, on the other hand, serves as a useful entry for the preparation of alkynylarenes or conjugated enynes. Heck reaction furnishes a coupling between an aryl halide and an alkene. Alternatively, olefination reactions provides a practical route for the synthesis of carbon-carbon double bond. In the past decade, we have uncovered four new kinds of transformations staring from the dithioacetal functionality (Scheme).1,2 Three of them have been employed in the synthesis of conjugated small molecules as well as conjugated oligomers/polymers. Their syntheses, photophysical as well as electroluminescent properties will briefly be discussed.

  20. Optoelectronic Organic MaterialsFrom Synthetic Point of View

    Institute of Scientific and Technical Information of China (English)

    LUH; Tien-Yau


    Most organic materials for optoelectronic applications are conjugated organic system. The burgeoning synthetic methodologies using organometallic catalysts or reagents have provided a powerful arsenal to design and synthesize new conjugated organic materials. It is particularly noteworthy that carbon-carbon bond formation involving a Csp2 or Csp at the reaction center can readily be achieved. For examples, cross-coupling reactions (e.g. Kumada-Corriu reaction, Stille reaction, and Suzuki reaction) are extremely powerful for the synthesis of Csp2-Csp2 single bond. Sonogashira reaction, on the other hand, serves as a useful entry for the preparation of alkynylarenes or conjugated enynes. Heck reaction furnishes a coupling between an aryl halide and an alkene. Alternatively, olefination reactions provides a practical route for the synthesis of carbon-carbon double bond. In the past decade, we have uncovered four new kinds of transformations staring from the dithioacetal functionality (Scheme).1,2 Three of them have been employed in the synthesis of conjugated small molecules as well as conjugated oligomers/polymers. Their syntheses, photophysical as well as electroluminescent properties will briefly be discussed.  ……

  1. Computational design of surfaces, nanostructures and optoelectronic materials (United States)

    Choudhary, Kamal

    Properties of engineering materials are generally influenced by defects such as point defects (vacancies, interstitials, substitutional defects), line defects (dislocations), planar defects (grain boundaries, free surfaces/nanostructures, interfaces, stacking faults) and volume defects (voids). Classical physics based molecular dynamics and quantum physics based density functional theory can be useful in designing materials with controlled defect properties. In this thesis, empirical potential based molecular dynamics was used to study the surface modification of polymers due to energetic polyatomic ion, thermodynamics and mechanics of metal-ceramic interfaces and nanostructures, while density functional theory was used to screen substituents in optoelectronic materials. Firstly, polyatomic ion-beams were deposited on polymer surfaces and the resulting chemical modifications of the surface were examined. In particular, S, SC and SH were deposited on amorphous polystyrene (PS), and C2H, CH3, and C3H5 were deposited on amorphous poly (methyl methacrylate) (PMMA) using molecular dynamics simulations with classical reactive empirical many-body (REBO) potentials. The objective of this work was to elucidate the mechanisms by which the polymer surface modification took place. The results of the work could be used in tailoring the incident energy and/or constituents of ion beam for obtaining a particular chemistry inside the polymer surface. Secondly, a new Al-O-N empirical potential was developed within the charge optimized many body (COMB) formalism. This potential was then used to examine the thermodynamic stability of interfaces and mechanical properties of nanostructures composed of aluminum, its oxide and its nitride. The potentials were tested for these materials based on surface energies, defect energies, bulk phase stability, the mechanical properties of the most stable bulk phase, its phonon properties as well as with a genetic algorithm based evolution theory of

  2. Mapping and manipulating optoelectronic processes in emerging photovoltaic materials (United States)

    Leblebici, Sibel Yontz

    The goal of the work in this dissertation is to understand and overcome the limiting optoelectronic processes in emerging second generation photovoltaic devices. There is an urgent need to mitigate global climate change by reducing greenhouse gas emissions. Renewable energy from photovoltaics has great potential to reduce emissions if the energy to manufacture the solar cell is much lower than the energy the solar cell generates. Two emerging thin film solar cell materials, organic semiconductors and hybrid organic-inorganic perovskites, meet this requirement because the active layers are processed at low temperatures, e.g. 150 °C. Other advantages of these two classes of materials include solution processability, composted of abundant materials, strongly light absorbing, highly tunable bandgaps, and low cost. Organic solar cells have evolved significantly from 1% efficient devices in 1989 to 11% efficient devices today. Although organic semiconductors are highly tunable and inexpensive, the main challenges to overcome are the large exciton binding energies and poor understanding of exciton dynamics. In my thesis, I optimized solar cells based on three new solution processable azadipyrromethene-based small molecules. I used the highest performing molecule to study the effect of increasing the permittivity of the material by incorporating a high permittivity small molecule into the active layer. The studies on two model systems, small donor molecules and a polymer-fullerene bulk heterojunction, show that Frenkel and charge transfer exciton binding energies can be manipulated by controlling permittivity, which impacts the solar cell efficiency. Hybrid organic-inorganic perovskite materials have similar advantages to organic semiconductors, but they are not excitonic, which is an added advantage for these materials. Although photovoltaics based on hybrid halide perovskite materials have exceeded 20% efficiency in only a few years of optimization, the loss mechanisms

  3. New materials based on carbazole for optoelectronic device applications:Theoretical investigation

    Institute of Scientific and Technical Information of China (English)

    K.Hasnaoui; H.Zgou; M.Hamidi; M.Bouachrine


    A quantum-chemical investigation on the structural and optoelectronic properties of two materials based on carbazole is carried out.The purpose is to display the effect of grafting the fluorine atoms on their optoelectronic and pbysico-chemical properties.In addition to solubility in the polar solvents and the modification in geometric parameters,the substitution of fluorine destabilizes the HOMO and LUMO levels,decreases the band gap energy and raises conjugation length.These properties suggest the substituted fluorine compound as a good candidate for optoelectronic applications.

  4. Synthesis of a New Optoelectronic Material Based on Oriented Adsorption of Dyes to Nanoparticles Surface

    Institute of Scientific and Technical Information of China (English)

    LI Gui-an; SONG Jian-ping; LI Xiu


    Synthesis of the optoelectronic storage material with structure for coating by nanosized metal and azo-dye was reported. The characterization of composites was made by using transmission electron microscope (TEM), ultraviolet-visible spectrometer (UV-Vis) and thermogravity analyzer (TGA). It is found that, due to the specific structure, in which azo-dye molecules are oriented and adsorbed on the spherical surface of nanosized metal, the absorption maximum of azo-dye methyl orange shift towards shorter wavelength band. The experimental results show that the proposed technique here would offer a promising way to synthesize short wavelength optoelectronic storage material by doping of metal nanoparticles coated with dyes in polymer. Furthermore, the composites based on the structure can present excellent thermal properties suitable for the requirements of optical storage. This new type of material is capable of matching semiconductor laser (GaN) in optoelectronic storage technology.

  5. Chip scale low dimensional materials: optoelectronics & nonlinear optics (United States)

    Gu, Tingyi

    The CMOS foundry infrastructure enables integration of high density, high performance optical transceivers. We developed integrated devices that assemble resonators, waveguide, tapered couplers, pn junction and electrodes. Not only the volume standard manufacture in silicon foundry is promising to low-lost optical components operating at IR and mid-IR range, it also provides a robust platform for revealing new physical phenomenon. The thesis starts from comparison between photonic crystal and micro-ring resonators based on chip routers, showing photonic crystal switches have small footprint, consume low operation power, but its higher linear loss may require extra energy for signal amplification. Different designs are employed in their implementation in optical signal routing on chip. The second part of chapter 2 reviews the graphene based optoelectronic devices, such as modulators, lasers, switches and detectors, potential for group IV optoelectronic integrated circuits (OEIC). In chapter 3, the highly efficient thermal optic control could act as on-chip switches and (transmittance) tunable filters. Local temperature tuning compensates the wavelength differences between two resonances, and separate electrode is used for fine tuning of optical pathways between two resonators. In frequency domain, the two cavity system also serves as an optical analogue of Autler-Towns splitting, where the cavity-cavity resonance detuning is controlled by the length of pathway (phase) between them. The high thermal sensitivity of cavity resonance also effectively reflects the heat distribution around the nanoheaters, and thus derives the thermal conductivity in the planar porous suspended silicon membrane. Chapter 4 & 5 analyze graphene-silicon photonic crystal cavities with high Q and small mode volume. With negligible nonlinear response to the milliwatt laser excitation, the monolithic silicon PhC turns into highly nonlinear after transferring the single layer graphene with

  6. Two-Dimensional Materials for Halide Perovskite-Based Optoelectronic Devices. (United States)

    Chen, Shan; Shi, Gaoquan


    Halide perovskites have high light absorption coefficients, long charge carrier diffusion lengths, intense photoluminescence, and slow rates of non-radiative charge recombination. Thus, they are attractive photoactive materials for developing high-performance optoelectronic devices. These devices are also cheap and easy to be fabricated. To realize the optimal performances of halide perovskite-based optoelectronic devices (HPODs), perovskite photoactive layers should work effectively with other functional materials such as electrodes, interfacial layers and encapsulating films. Conventional two-dimensional (2D) materials are promising candidates for this purpose because of their unique structures and/or interesting optoelectronic properties. Here, we comprehensively summarize the recent advancements in the applications of conventional 2D materials for halide perovskite-based photodetectors, solar cells and light-emitting diodes. The examples of these 2D materials are graphene and its derivatives, mono- and few-layer transition metal dichalcogenides (TMDs), graphdiyne and metal nanosheets, etc. The research related to 2D nanostructured perovskites and 2D Ruddlesden-Popper perovskites as efficient and stable photoactive layers is also outlined. The syntheses, functions and working mechanisms of relevant 2D materials are introduced, and the challenges to achieving practical applications of HPODs using 2D materials are also discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Amorphous electron-accepting materials for organic optoelectronics

    NARCIS (Netherlands)

    Ganesan, P.


    The importance of organic materials for use in electronic devices such as OLEDs, OFETs and photovoltaic cells has increased significantly over the past decade. Organic materials have been attractive candidates for such electronic devices because of their compatibility with high-throughput, low-cost

  8. Amorphous electron-accepting materials for organic optoelectronics

    NARCIS (Netherlands)

    Ganesan, P.


    The importance of organic materials for use in electronic devices such as OLEDs, OFETs and photovoltaic cells has increased significantly over the past decade. Organic materials have been attractive candidates for such electronic devices because of their compatibility with high-throughput, low-cost

  9. Organic optoelectronics

    CERN Document Server

    Hu, Wenping; Gong, Xiong; Zhan, Xiaowei; Fu, Hongbing; Bjornholm, Thomas


    Written by internationally recognized experts in the field with academic as well as industrial experience, this book concisely yet systematically covers all aspects of the topic.The monograph focuses on the optoelectronic behavior of organic solids and their application in new optoelectronic devices. It covers organic electroluminescent materials and devices, organic photonics, materials and devices, as well as organic solids in photo absorption and energy conversion. Much emphasis is laid on the preparation of functional materials and the fabrication of devices, from materials synthesis a

  10. Optoelectronic materials for subwavelength imaging and laser beam maniupulation (United States)

    Krishnamurthi, Mahesh


    Metamaterials are artificially engineered materials for providing properties which are not readily available in nature. In the last decade, research activity in the field of metamaterials has led to diverse applications including remote sensing, lithography, communication, and biological imaging. For instance, researchers have shown that a class of metamaterials exhibit negative refraction and have also utilized this phenomenon to enable a super lens for beating the diffraction limit of light. Other fascinating developments include optical cloaking devices which involves bending of the electromagnetic waves completely around the objects. Therefore, metamaterials have become an important subject for study. The central focus of this thesis is primarily on two applications of metamaterials: sub-wavelength imaging and laser beam manipulation. The proof-ofconcept of sub-wavelength imaging has been demonstrated in the mid-infrared regime. A tapered array of step-index cylindrical waveguides is the basis for the magnifying infrared fiberscope. Optimized designs have been presented for the proposed infrared fiberscope by numerical modeling. The fabrication of the fiberscope is based on a high pressure chemical fluid deposition technique to deposit precisely defined periodic arrays of semiconductor waveguides within the holes of a microstructured optical fiber made of silica. The optical properties of various waveguides (germanium, silicon, zinc selenide, silicon nitride) fabricated by this method have been characterized in the infrared regime. The basic essential features of an imaging fiber bundle such as isolation between adjacent pixels, magnification, optical throughput and near-field image transfer characteristics have been investigated. The imaging concept is demonstrated at 1.55 mum, 3.39 mum and 10.64 mum using appropriate materials for fabricating the tapered array of waveguides to maximize the optical throughput. Manipulation of the laser beam has been

  11. The photodegradation of polymers and small molecular materials applied in organic optoelectronic devices

    Directory of Open Access Journals (Sweden)

    Patricie Heinrichova


    Full Text Available This contribution is focused on study of photo-degradation of aseveral photoconductive organic materials such as polymeric (highTg–PPV – block copolymer of derivates of poly(p–phenylene–vinylene and P3HT – poly(3–hexylthiophene–2,5–diyl as smallmolecular weight material a derivate of diphenyl–diketopyrrolo–pyrrole – DPP 36 was used. These materials are used forconstruction of optoelectronic devices like organic solar cells,transistors, optical sensors and others. Photo-degradation processeswere studied by optical characterization (UV–VIS spectroscopy,and by analysis of photographs obtained by means of opticalmicroscope.

  12. Thieno[3,4-b]thiophene-Based Novel Small-Molecule Optoelectronic Materials. (United States)

    Zhang, Cheng; Zhu, Xiaozhang


    Because of the tailorable photoelectric properties derived from judicious molecular design and large-area and low-temperature processability especially on flexible substrates, design and synthesis of new organic π-functional materials is always a central topic in the field of organic optoelectronics, which siginificantly contributed to the development of high-performance optoelectronic devices such as organic photovoltaics (OPVs), organic field-effect transistors (OFETs), and organic light-emitting diodes (OLEDs). Compared with polymers, small molecules with well-defined molecular structures benefit the establishment of structure-property relationships, which may provide valuable guidelines for the design of new optoelectronic materials to further promote the device performance. New building blocks are essential for the construction of optoelectronic materials. As is well recognized, thiophene-based functional materials have played an indispensable role in the development of organic optoelectronics. Compared with six-membered benzene, five-membered thiophene shows weaker aromaticity and lower steric hindrance and may provide extra sulfur-sulfur interactions in solid state. Among various thiophene building blocks, thieno[3,4-b]thiophene (TbT) is an asymmetric fused bithiophene containing four functionalization positions, in which the proaromatic thiophene can effectively stabilize the quinoidal resonance of the aromatic thiophene. Thus, TbT exhibits a unique characteristic of quinoid-resonance effect that is powerful to modulate electronic structures. Although the application of TbT in polymer donor materials represented by PTB-7 has achieved a great success, its application in small-molecule optoelectronic materials is almost an untouched field. In this Account, we summerize the rational design of a series of TbT-based small-molecule optoelectronic materials designed and optimized by quinoid-resonance effect, regiochemistry, and side-chain engineering and

  13. Quantum dot-based organic-inorganic hybrid materials for optoelectronic applications (Conference Presentation) (United States)

    Lee, Kwang-Sup


    Our recent research involves the design, characterization and testing of devices constituting low bandgap conjugated polymers, surface-engineered quantum dots (QDs), carbon nanotube (CNT)-QDs, QDs decorated nanowires, and QD coupled conjugated polymers. The resulting hybrid materials can be used for facilitating the charge/energy transfer and enhancing the charge carrier mobility in highly efficient optoelectronic and photonic devices. Exploiting the full potential of quantum dots (QDs) in optoelectronic devices require efficient mechanisms for transfer of energy or electrons produced in the optically excited QDs. We propose semiconducting π-conjugated molecules as ligands to achieve energy or charge transfer. The hybridization of p-type π-conjugated molecules to the surface of n-type QDs can induce distinct luminescence and charge transport characteristics due to energy and/or charge transfer effects. QDs and π-conjugated molecule hybrids with controlled luminescent properties can be used for new active materials for light-emitting diodes and flexible displays. In addition, such hybrid systems with enhanced charge transfer efficiency can be used for nanoscale photovoltaic devices. We have also explored single nanoparticle based electronics using QDs and π-conjugated molecule hybrids with molecular-scale n-p or n-insulating (ins)-p-heterojunction structures.

  14. New materials for optoelectronic devices: Growth and characterization of indium and gallium chalcogenide layer compounds

    Energy Technology Data Exchange (ETDEWEB)

    Mancini, A.M.; Micocci, G.; Rizzo, A.


    The main characteristics and the possible applications of some new materials for optoelectronic devices are analyzed. For this purpose, the most widely used growth methods for obtaining good quality single crystals of indium and gallium chalcogenide layered compounds are described together with the best results obtained by us in the growth of GaS, GaSe, GaTe and InSe. The structural characteristics of these compounds, as inferred by electron and X-ray diffraction are reported. The electrical and optical properties of the various materials are related to the growth methods and are analyzed taking into account the trapping centers present in the energy gaps. The parameters of these centers are reported for all the analyzed layered compounds as determined by different electric and photoelectric techniques.

  15. The Effect of Illumination on the Gelation Process of Optoelectronic Materials (United States)

    Morgan, Brian; Dadmun, Mark


    A tremendous amount of insight into the functionality of conjugated polymers in optoelectronic devices can be gained by the study of these materials as they progress through the gelation process. The nature of the percolated network structures formed directly affects exciton transport and device efficiency, thus precise knowledge of the evolution of structures provides crucial information towards improving device efficiency via processing techniques. Additionally, select optoelectronic polymers have exhibited reversibly altered physical properties such as viscosity upon exposure to white light, potentially indicative of temporary conformation changes. We have conducted a series of small angle neutron scattering experiments to probe the temperature-driven gelation process of the conjugated photoactive polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) in both the presence and complete absence of white light. Fitting the resultant data indicates the creation and steady growth of cylindrical aggregates formed by the agglomeration of free chain P3HT as the growth process. Furthermore, clear differences between illuminated and non-illuminated gels are observed across multiple length scales, pointing towards an optically-induced variation in the gelation process.

  16. Novel BTlGaN semiconducting materials for infrared opto-electronic devices (United States)

    Assali, Abdenacer; Bouslama, M'hamed


    BTlGaN quaternary alloys are proposed as new semiconductor materials for infrared opto-electronic applications. The structural and opto-electronic properties of zinc blende BxTlyGa1-x-yN alloys lattice matched to GaN with (0 ⩽ x and y ⩽ 0.187) are studied using density functional theory (DFT) within full-potential linearized augmented plane wave (FP-LAPW) method. The calculated structural parameters such as lattice constant a0 and bulk modulus B0 are found to be in good agreement with experimental data using the new form of generalized gradient approximation (GGA-WC). The band gaps of the compounds are also found very close to the experimental results using the recently developed Tran-Blaha-modified Becke-Johnson (TB-mBJ) exchange potential. A quaternary BxTlyGa1-x-yN is expected to be lattice matched to the GaN substrate with concentrations x = 0.125 and y = 0.187 allows to produce high interface layers quality. It has been found that B incorporation into BTlGaN does not significantly affect the band gap, while the addition of dilute Tl content leads to induce a strong reduction of the band gap, which in turn increases the emission wavelengths to the infrared region. The refractivity, reflectivity and absorption coefficient of these alloys were investigated. BTlGaN/GaN is an interesting new material to be used as active layer/barriers in quantum wells suitable for realizing advanced Laser Diodes and Light-Emitting Diodes as new sources of light emitting in the infrared spectrum region.

  17. Systematic ab initio study of half-Heusler materials for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Gruhn, Thomas; Felser, Claudia [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg University, Mainz (Germany)


    The development of new, optimized optoelectronic devices depends crucially on the availability of semiconductors with taylored electronic and structural properties. At the moment, the majority of applications is based on a rather small set of semiconducting materials, while many more semiconductors exist in the huge class of ternary compounds. Especially, the class of 8-electron half-Heusler materials comprises a large number semiconducters with various properties. With the help of ab initio density functional theory we have studied essentially all 8-electron half-Heusler compounds that are of technological relevance. For more than 650 compounds we have determined the optimum configuration by varying the lattice constant and permuting the elements over the sublattices. Within this exceptionally large data set we have studied the band structure and the lattice constants as a function of the electronegativities of the elements, the arrangement of the atoms, and the atomic radii. The results are used to select suitable materials for the buffer layer in thin-film solar cells with a Cu(In,Ga)Se{sub 2} (CIGS) absorber layer. Considering the bandgap and the geometrical matching with the CIGS film, we have obtained a set of 29 compounds that are promissing materials for cadmium-free CIGS buffer layer.

  18. Integration of 2D materials on a silicon photonics platform for optoelectronics applications (United States)

    Youngblood, Nathan; Li, Mo


    Owing to enormous growth in both data storage and the demand for high-performance computing, there has been a major effort to integrate telecom networks on-chip. Silicon photonics is an ideal candidate, thanks to the maturity and economics of current CMOS processes in addition to the desirable optical properties of silicon in the near IR. The basics of optical communication require the ability to generate, modulate, and detect light, which is not currently possible with silicon alone. Growing germanium or III/V materials on silicon is technically challenging due to the mismatch between lattice constants and thermal properties. One proposed solution is to use two-dimensional materials, which have covalent bonds in-plane, but are held together by van der Waals forces out of plane. These materials have many unique electrical and optical properties and can be transferred to an arbitrary substrate without lattice matching requirements. This article reviews recent progress toward the integration of 2D materials on a silicon photonics platform for optoelectronic applications.

  19. Nanoscale Tunable Strong Carrier Density Modulation of 2D Materials for Metamaterials and Other Tunable Optoelectronics (United States)

    Peng, Cheng; Efetov, Dmitri; Shiue, Ren-Jye; Nanot, Sebastien; Hempel, Marek; Kong, Jing; Koppens, Frank; Englund, Dirk

    Strong spatial tunability of the charge carrier density at nanoscale is essential to many 2D-material-based electronic and optoelectronic applications. As an example, plasmonic metamaterials with nanoscale dimensions would make graphene plasmonics at visible and near-infrared wavelengths possible. However, existing gating techniques based on conventional dielectric gating geometries limit the spatial resolution and achievable carrier concentration, strongly restricting the available wavelength, geometry, and quality of the devices. Here, we present a novel spatially selective electrolyte gating approach that allows for in-plane spatial Fermi energy modulation of 2D materials of more than 1 eV (carrier density of n = 1014 cm-2) across a length of 2 nm. We present electrostatic simulations as well as electronic transport, photocurrent, cyclic voltammetry and optical spectroscopy measurements to characterize the performance of the gating technique applied to graphene devices. The high spatial resolution, high doping capacity, full tunability and self-aligned device geometry of the presented technique opens a new venue for nanoscale metamaterial engineering of 2D materials for complete optical absorption, nonlinear optics and sensing, among other applications.

  20. PREFACE: Proceedings of the International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA) 2014 (United States)

    Sweeney, Stephen J.; Jha, Animesh


    Developments in the connected fields of optics, optoelectronics and photonics have had a profound effect on the emergence of modern technologies and their influence on our lives. In all of these fields, understanding and improving the basic underlying materials is of crucial importance for the development of systems and applications. The International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA) has successfully married these fields and become a regular feature in the conference calendar. The 6th conference in the series, held at the University of Leeds from 27th July - 1st August, 2014, continued the ICOOPMA tradition and attracted 220 international delegates with a diverse range of disciplines and interests. The 59 papers in this Proceedings provide an excellent overview of the topics presented. The conference consisted of four thematic areas in the fields of inorganic semiconductors, carbon and polymeric materials, inorganic glasses and crystalline materials, and metamaterials and plasmonics where each theme area included research on basic materials through to device applications. The conference began with a Workshop organised by Professor Dan Hewak (University of Southampton) with speakers covering Organic Optoelectronic Complexes (Dr Richard Curry, University of Surrey), Metamaterials (Dr Vassili Fedotov, University of Southampton), Graphene (Dr Monica Craciun, University of Exeter) and Amorphous Semiconductors (Dr Jiri Orava, University of Cambridge and Tohoku University). This provided an excellent overview of a representative range of the important topics that were discussed further at the conference. The conference included a banquet which successfully combined excellent food with a relaxing opportunity for the conference delegates to socialise and network. The pinnacle of the evening was the after dinner speech given by our distinguished guest, Professor Sir David Payne (University of Southampton), who gave a

  1. Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

    Directory of Open Access Journals (Sweden)

    Debashis De


    Full Text Available The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementioned superlattices, together with quantum well superlattices under magnetic quantization, has also been investigated in this regard. It appears, taking HgTe/Hg1−xCdxTe and InxGa1−xAs/InP effective mass superlattices, that the photoemission from these quantized structures is enhanced with increasing photon energy in quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six different applications in the fields of low dimensional systems in general.

  2. Optimizing organic optoelectronic materials in both space and energy/time domains (United States)

    Sun, Sam-Shajing; Fan, Zhen; Wang, Yiqing; Haliburton, James H.; Wang, Meina; Winston, Kizzy; Bonner, Carl E.


    Optimizations of organic/polymeric optoelectronic materials and devices in both space and energy/time domains have been studied, both experimentally and theoretically, in order to achieve high efficiency photoelectric conversion. Specifically, at spatial domain, a 'tertiary' block copolymer supra-molecular nano structure has been designed, and a series of -DBAB- type of block copolymers, where D is a conjugated donor block, A is a conjugated acceptor block, and B is a non-conjugated and flexible bridge unit, have been synthesized, characterized, and preliminarily examined for photoelectric conversions. In comparison to simple donor/acceptor (D/A) blends, -DBAB- block copolymers exhibited much better photoluminescence quenching and photoconductivity. These are mainly attributed to improvement in spatial domain for charge carrier generation and transportation in -DBAB- block copolymers then in simple D/A blends. In materials energy levels and electron transfer dynamic regime, theoretical analysis revealed that, the photo (or thermal) excitation induced charge separation appears to be most efficient when the corresponding donor/acceptor frontier orbital level offset is equal to the sum of the charge separation reorganization energy and the exciton binding energy. Other donor/acceptor frontier orbital energy offsets were also identified where the charge recombination becomes most severe, and where the charge separation rate constant over charge recombination rate constant become largest. This dynamically favored charge separation mechanism is also proposed to explain the general 'doping' induced charge carrier generation. Implications of these findings and future approaches are also discussed in order to achieve inexpensive, lightweight, flexible, and high efficiency 'plastic' solar cells or photo detectors.

  3. Application of SOI materials in optoelectronics%SOI材料在光电子学中的应用

    Institute of Scientific and Technical Information of China (English)

    陈媛媛; 杨笛


    SOI (silicon-on-insulater) material is an important kind of optical waveguide materials for silicon-based optoelectronics applications. In recent years, with the maturation of facture and manufacture technology of SOI material, the research on SOI-based optical waveguide devices have attracted more and more attentions. In this paper,the specific application of SOI material in silicon-based optoelectronics are introduced, including the recent developments in thermo-optic devices,electro-optic devices,optical coupler which connects sub-micron optical waveguide and fiber,integrated optoelectronic chip etc. Smaller waveguide cross-section is the developing direction of SOI-based optical waveguide devices in the future.%SOI材料是应用于硅基光电子学中的一种重要的光波导材料.近年来随着SOI材料制备和加工技术的成熟,SOI基光波导器件的研究日益受到人们的重视.文章介绍了SOI材料在光电子学领域的一些具体应用,包括了在热光器件、电光器件、亚微米波导器件与光纤的耦合器以及光电子集成芯片等方面的最新研究进展.更小的波导截面尺寸是未来SOI光波导器件发展的必然趋势.

  4. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990

    Energy Technology Data Exchange (ETDEWEB)

    Razeghi, M. (Thomson-CSF, Orsay (France))


    The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry.

  5. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990 (United States)

    Razeghi, Manijeh

    The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry.

  6. The optoelectronic properties of a solar energy material: Ag2HgSnS4 (United States)

    Hadjri Mebarki, S.; Amrani, B.; Driss Khodja, K.; Khelil, A.


    We used an ab initio full potential-linearized augmented plane wave technique within the density functional theory to study the structural and optoelectronic properties of Ag2HgSnS4 in a wurtzite-stannite phase. The exchange correlation effects are included through the generalized gradient approximation and modified Becke-Johnson exchange potential. Various physical quantities, such as lattice parameter, bulk modulus, band structure and density of states, are given. Also, we have presented the results of the effective mass for the electrons in the CB and the holes in the BV. We show that the modified Becke-Johnson exchange potential can predict the energy band gap in better agreement with the experiment. In addition the dielectric function and energy-loss function are presented for the energy range of 0-26 eV. The electronic and optical properties indicate that this compound can be successfully used in optoelectronic devices

  7. Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at National Sun Yat-sen University) 

    Energy Technology Data Exchange (ETDEWEB)

    Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division


    These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at National Sun Yat-sen University. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

  8. Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at Center for Condensed Matter Sciences)

    Energy Technology Data Exchange (ETDEWEB)

    Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division


    These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at Center for Condensed Matter Sciences. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

  9. Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at National Taipei University of Technology)

    Energy Technology Data Exchange (ETDEWEB)

    Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division


    These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at National Taipei University of Technology. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

  10. Nanotube electronics and optoelectronics

    Directory of Open Access Journals (Sweden)

    Phaedon Avouris


    Full Text Available Among the many materials that have been proposed to supplement and, in the long run, possibly succeed Si as a basis for nanoelectronics, carbon nanotubes (CNTs have attracted the most attention. CNTs are quasi-one-dimensional materials with unique properties ideally suited for electronics. We briefly discuss the electrical and optical properties of CNTs and how they can be employed in electronics and optoelectronics. We focus on single CNT transistors, their fabrication, assembly, doping, electrical characteristics, and integration. We also address the possible use of CNTs in optoelectronic devices such as electroluminescent light emitters and photodetectors.

  11. Steps towards silicon optoelectronics

    CERN Document Server

    Starovoytov, A


    nanostructure fabrication. Thus, this thesis makes a dual contribution to the chosen field: it summarises the present knowledge on the possibility of utilising optical properties of nanocrystalline silicon in silicon-based electronics, and it reports new results within the framework of the subject. The main conclusion is that due to its promising optoelectronic properties nanocrystalline silicon remains a prospective competitor for the cheapest and fastest microelectronics of the next century. This thesis addresses the issue of a potential future microelectronics technology, namely the possibility of utilising the optical properties of nanocrystalline silicon for optoelectronic circuits. The subject is subdivided into three chapters. Chapter 1 is an introduction. It formulates the oncoming problem for microelectronic development, explains the basics of Integrated Optoelectronics, introduces porous silicon as a new light-emitting material and gives a brief review of other competing light-emitting material syst...

  12. Toward Nanoscale Material Applications: Colloidal Quantum Dot Memory And Multi-Layer Graphene Electronics And Optoelectronics (United States)

    Olac-vaw, Roman

    In this dissertation, the analysis of a possible use of colloidal semiconductor quantum dots (QDs) in memory storage devices is presented. The charging and discharging behaviors of capped cadmium selenide (CdSe) QDs deposited on a sheet of graphite film layers in ambient conditions were analyzed. Individual QDs can be addressed (charged) with the synergistic action of light and the mechanical interaction of a probe of an atomic force microscope (AFM). The probe squeezes the coating layer of QDs helping the photoelectron to tunnel to either the conductive AFM probe or to the substrate. The charge can be induced on individual QDs by locating the QDs with AFM. The charges were stable in ambient conditions (survived up to 24 hours), and even recovered within a minute after their forced neutralization by airflow of negative ions. The analyzed QDs allow recording information at a density up to 1Tb/cm 2. A possibility to attain charging (writing) time down to nanoseconds while keeping discharging (storage) times for more than 100 years is also demonstrated. These results may also be of interest for QDs based sensors, memory, and solar cell applications. Multi-layer heteroepitaxial graphene was successfully formed on 3C-SiC grown on a Si substrate using single gas source molecular beam epitaxy (MBE). The observation of ambipolar behavior, one of the unique properties of graphene, verifies the successful growth of graphene layers. The epitaxial graphene is believed to be unintentionally p-type doped with the Fermi level offset around +0.11˜+0.12 V at the Dirac point. Backgate field-effect transistors using multilayer graphene channel were designed, fabricated and characterized for electronic and optoelectronic applications. Even though some gate leakage current was observed, the experimental results show the device worked as an n-type transistor as well as an infrared detector. The drain saturated current of the graphene channel transistor is on the order of mA/mm. The

  13. Wide-gap layered oxychalcogenide semiconductors: materials, electronic structures and optoelectronic properties.


    Ueda, Kazushige; Hiramatsu, Hidenori; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo


    Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and examined their basic optical and electrical properties. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were...

  14. Study of silicone-based materials for the packaging of optoelectronic devices (United States)

    Lin, Yeong-Her

    The first part of this work is to evaluate the main materials used for the packaging of high power light-emitting diodes (LEDs), i.e., the die attach materials, the encapsulant materials, and high color rendering index(CRI) sol-gel composite materials. All of these materials had been discussed the performance, reliability, and issues in high power LED packages. High power white LEDs are created either from blue or near-ultraviolet chips encapsulated with a yellow phosphor, or from red-green-blue LED light mixing systems. The phosphor excited by blue LED chip was mostly used in experiment of this dissertation. The die attach materials contains filler particles possessing a maximum particle size less than 1.5 mum in diameter blended with epoxy polymer matrix. Such compositions enable thin bond line thickness, which decreases thermal resistance that exists between thermal interface materials and the corresponding mating surfaces. The thermal conductivity of nano silver die attach materials is relatively low, the thermal resistance from the junction to board is just 1.6 KW-1 in the bond line thickness of 5.3 mum, which is much lower than the thermal resistance using conventional die attach materials. The silicone die attach adhesive made in the lab cures through the free radical reaction of epoxy-functional organopolysiloxane and through the hydrosilylation reaction between alkenyl-functional organopolysiloxane and silicone-boned hydrogen-functional organopolysiloxane. By the combination of the free radical reaction and the hydrosilylation reaction, the low-molecular-weight silicone oil will not be out-migrated and not contaminate wire bondability to the LED chip and lead frame. Hence, the silicone die attach adhesive made in the lab can pass all reliability tests, such as operating life test JEDEC 85°C/85RH and room temperature operating life test. For LED encapsulating materials, most of commercial silicone encapsulants still suffer thermal/radiation induced

  15. PECASE: Nanostructure Hybrid Organic/Inorganic Materials for Active Opto-Electronic Devices (United States)


    intergration and active device development: (1) the directed structuring of materials at the nanoscale through pattening and material growth methods, (2) the...electroluminescence (EL) that can be of use in fields as diverse as optical communications , spectroscopy, and environmental and industrial sensing. The RC structure...TFEL) devices already occupy a segment of the large-area, high-resolution, flat-panel-display market . The AC-TFEL displays, which consist of a

  16. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices (United States)

    Horsley, Kimberly Anne

    Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

  17. Fluorinated Materials for Air-stable and Moisture-resistant Flexible Optoelectronics (United States)


    with similar electron-withdrawing ability but better superhydrophobicity and oleophobicity compared to trifluormethyl, can lead to a synthetically...semiconductor materials (H. Sun et. al. Chem. Comm. 2012).16 The excellent fluorophilicity and oleophobicity of perfluoroalkyl groups provides a route

  18. The diffusivity-mobility ratio in heavily doped nonlinear optical, optoelectronic and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, S. [Nano Scale Device Research Laboratory, Centre for Electronics Design and Technology, Indian Institute of Science, Bangalore 560 012 (India); Pahari, S. [Administrative Department, Jadavpur University, Kolkata 700 032 (India); Sarkar, R. [Department of Computer Science and Engineering, West Bengal University of Technology, BF-142, Salt Lake City, Sector-1, Kolkata 700064 (India); Ghosh, S. [Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, Howrah 711 103 (India); Ghatak, K.P. [Department of Electronic Science, University of Calcutta, 92, Achryya Prafulla Chandra Road, Kolkata 700 009 (India)], E-mail:


    We study the diffusivity-mobility ratio (DMR) in heavily doped nonlinear compounds forming band tails on the basis of a newly formulated electron dispersion law and III-V, ternary and quaternary materials form a special case of our generalized analysis. The complex nature of the energy spectrum and creation of a new forbidden zone is the consequence of anisotropic energy band constants and the interaction of the impurity atoms in the tails with spin-orbit splitting of valence bands for the other compounds. Analytically, the presence of non-removable poles in the dispersion relation of the undoped material creates the complex energy spectrum for the corresponding heavily doped sample. The DMR for the heavily doped II-VI, IV-VI and stressed materials has been studied. It has been found taking n-type CdGeAs{sub 2,}, Cd{sub 3}As{sub 2}, InAs, InSb, Hg{sub 1-x}Cd{sub x}Te, In{sub 1-x}Ga{sub x}As{sub y}P{sub 1-y} lattice matched to InP, CdS, PbTe, PbSnTe, Pb{sub 1-x}Sn{sub x}Se and stressed InSb as examples that the DMR increases with the increasing electron concentration with different numerical values and the nature of variations are totally band structure dependent. An experimental method of determining the DMR in heavily doped materials for arbitrary dispersion relations together with three applications in the area of material science in general has been suggested.

  19. Excitation energy transfer in organic materials: from fundamentals to optoelectronic devices. (United States)

    Laquai, Frédéric; Park, Young-Seo; Kim, Jang-Joo; Basché, Thomas


    In this review, we discuss investigations of electronic excitation energy transfer in conjugated organic materials at the bulk and single molecule level and applications of energy transfer in fluorescent and phosphorescent organic light emitting devices. A brief overview of common descriptions of energy transfer mechanisms is given followed by a discussion of some basic photophysics of conjugated materials including the generation of excited states and their subsequent decay through various channels. In particular, various examples of bimolecular excited state annihilation processes are presented. Energy transfer studies at the single molecule level provide a new tool to study electronic couplings in simple donor/acceptor dyads and conjugated polymers. Finally, energy transfer in organic electronic devices is discussed with particular emphasis on triplet emitter doped OLEDs and blends for white light emission.

  20. Molecule@MOF: A New Class of Opto-electronic Materials.

    Energy Technology Data Exchange (ETDEWEB)

    Talin, Albert Alec; Jones, Reese E.; Spataru, Dan Catalin; Leonard, Francois Leonard; He, Yuping; Foster, Michael E.; Allendorf, Mark D.; Stavila, Vitalie


    Metal organic frameworks (MOFs) are extended, nanoporous crystalline compounds consisting of metal ions interconnected by organic ligands. Their synthetic versatility suggest a disruptive class of opto - electronic materials with a high degree of electrical tunability and without the property - degrading disorder of organic conductors. In this project we determined the factors controlling charge and energy transport in MOFs and evaluated their potential for thermoelectric energy conversion. Two strategies for a chieving electronic conductivity in MOFs were explored: 1) using redox active 'guest' molecules introduced into the pores to dope the framework via charge - transfer coupling (Guest@MOF), 2) metal organic graphene analogs (MOGs) with dispersive band structur es arising from strong electronic overlap between the MOG metal ions and its coordinating linker groups. Inkjet deposition methods were developed to facilitate integration of the guest@MOF and MOG materials into practical devices.

  1. New anthracene-based-phtalocyanine semi-conducting materials: Synthesis and optoelectronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Kahouech, M.S. [Laboratoire de Chimie Organique et Analytique, Institut Supérieur de l' Education et de la Formation Continue (Université El Manar), Bardo 2000 (Tunisia); Hriz, K., E-mail: [Laboratoire des Interfaces et Matériaux Avancés (LIMA), Faculté des Sciences de Monastir (Université de Monastir), Bd. de l' Environnement, Monastir 5019 (Tunisia); Touaiti, S.; Bassem, J. [Laboratoire de Chimie Organique et Analytique, Institut Supérieur de l' Education et de la Formation Continue (Université El Manar), Bardo 2000 (Tunisia)


    Highlights: • Synthesis of tow phtalocyanines based on the anthracene and tetrazole. • Semi-conducting supramolecular material. • Good PL quantum yield. • The film morphology of the phtalocynine containing tetrazole group enhanced the carrier mobility. - Abstract: A new anthracene-based semi-conducting phtalocyanines AnPc and AnPc-Tr were synthesized in solvent-free conditions. The supramolecular structure of these compounds was confirmed by NMR and FT-IR spectroscopies. Their optical properties were investigated by UV–vis and photoluminescence spectroscopies. The optical gaps were estimated from the absorption-onsets films, and the obtained values were of 1.50 eV and 1.47 eV for AnPc-Tr and AnPc respectively. In solid state, a weaker π–π-interactions of conjugated systems were obtained in the case of AnPc-Tr in comparison with AnPc. This behavior was explained by steric hindrance of triazol groups, which decrease the planarity of macromolecular structure. The HOMO and LUMO levels were estimated using cyclic voltammetry analysis; two phtalocyanine derivatives show a comparable ionization potential. The phtalacyanine containing triazole groups (AnPc-Tr) reveals a higher electron affinity in comparison with AnPc. Single-layer diode devices were fabricated and showed relatively low turn-on voltages.

  2. Synthesis, characterization and photophysical study of ethynyl pyrene derivatives as promising materials for organic optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Gama, Paola E.; Corrêa, Rodrigo J.; Garden, Simon J., E-mail:


    Two series of pyrene derivatives, phenylethynyl (4–6) and the previously unknown ethynylcyclohexanol (7–9), were prepared by Sonogashira cross-coupling reactions. The introduction of an increasing number of ethynyl substituents resulted in a progressive bathochromic shift in the absorption and emission spectra which culminated in an inversion of the nature of the first two excited states ({sup 1}L{sub a} and {sup 1}L{sub b}) of the tetra-substituted derivatives (6 and 9) relative to pyrene. In solution, only for the mono-cyclohexanolethynyl pyrene (7) a sufficiently concentrated solution could be obtained so as to observe the excimer. Additionally, the emission band ratio I{sub 1}/I{sub 3} for 7 was found to be moderately sensitive to the nature of the solvent and the ratio directly correlated with the Py scale. TDDFT calculations were used to explore the variation of the properties of the low lying excited states. Fluorescence emission in the solid state, with the appropriate choice of materials, covers the entire visible region of the electromagnetic spectrum due to static excimer emission. A massive red-shift for solid state photoluminescence from 9 resulted in emission at longer wavelength than the more highly conjugated 6. - Highlights: • Phenyl and cyclohexanol ethynylpyrene derivatives: photophysically compared. • Excimer formation and solvent dependent emission from cyclohexanolethynylpyrene. • Systematic red shifting of solid state photoluminescence from static excimers. • Massive red-shift in the solid state photoluminescence of 9. • TDDFT calculations: properties of the lowest singlet states, systematic comparison.

  3. Thiophene-based donor-acceptor conjugated polymer as potential optoelectronic and photonic material

    Indian Academy of Sciences (India)

    Maluvadi G Murali; Udayakumar Dalimba; Vandana Yadav; Ritu Srivastava; K Safakath


    In this paper, we report the synthesis, characterization and optical properties of a donor-acceptor conjugated polymer, PTh-CN, containing 3,4-didodecyloxythiophene and cyanovinylene units. The polymer possesses a low band gap of 1.75 eV as calculated from the onset absorption edge. From the electrochemical study, the HOMO and LUMO energy levels of the polymer are figured out to be −5.52 eV and −3.52 eV, respectively. Polymer light-emitting diodes are fabricated using PTh-CN as the emissive layer with a device configuration of ITO/PEDOT:PSS/PTh-CN/Al. The device showed stable saturated red electroluminescence with CIE coordinate values (0.65, 0.32) at 12 V, which are very close to the values for standard red demanded by the NTSC. In addition, the device showed good colour stability under different bias voltages and the threshold voltage of the PLED device is found to be as low as 3.1 V. Further, a nanocomposite of the polymer and TiO2 nanoparticles is prepared by the dispersion method. The nonlinear optical properties of PTh-CN and PTh-CN/TiO2 nanocomposite are studied using z-scan technique. The polymer solution, polymer film and polymer/TiO2 nanocomposite film show a strong saturable absorption behaviour. The value of saturation intensity (Is) is found to be of the order 1011-1012 W/m2, indicating that the materials are useful candidates for photonic applications.

  4. Terpolymer polyrotaxanes: a promising supramolecular system as electron-transporting materials for optoelectronics (United States)

    Farcas, A.; Resmerita, A.-M.; Farcas, F.


    Optical, electrochemical and surface-morphological properties of three terpolymer polyrotaxanes (1a, 1b and 1c) composed of 2,7-dibromo-9,9-dicyanomethylenefluorene encapsulated into γ-cyclodextrin (γCD), β- or γ-persilylated cyclodextrin (PS-γCD, PS-γCD) cavities (acceptor) and 4,4'-dibromo-4''-methyltriphenylamine (donor) randomly distributed into 9,9-dioctylfluorene conjugated chains have been evaluated and compared to those of the reference 1. The role of the encapsulation on the thermal stability, solubility, film forming ability and transparency was also investigated. High fluorescence efficiency, almost identical normalized absorbance maximum in solution and solid-states of 1a, 1b and 1c provides the lower aggregation tendency. The fluorescence lifetimes (τ) of 1a, 1b and 1c follow a mono-exponential decay with a value τ = 1.11, 1.03 and 1.14 ns, compared with the neat 1, where a bi-exponential decay was identified. AFM studies reveal a smooth and homogenous surface morphology for polyrotaxanes than that of the reference. The electrochemical data provided that the investigated compounds exhibited n- and p-doping processes. The HOMO/LUMO energy levels 1a, 1b, 1c and 1 and in combination with the work function of anodic ITO glass substrates coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (-5.2 eV) and cathodic Ca (-2.8 eV) or Al (-2.2 eV) indicate that the compounds are electrochemically accessible as electron-transporting materials.

  5. Computational investigations of organic materials for hybrid nanodevice and optoelectronic applications (United States)

    Crenshaw, Jasmine Davenport


    This dissertation examines two organic material systems, biotinylated microtubule filaments and thiophene. Biotinylated microtubule filaments partially coated with streptavidin and gliding on surface-adhered kinesin motor proteins converge to form linear "nanowire" and circular "nanospool" structures. We present a cellular automaton simulation tool that models the dynamics of microtubule gliding and interactions. In this method, each microtubule is composed of a head, body, and tail segments. The microtubule surface density, lengths, persistence length, and modes of interaction are dictated by the user. The microtubules are randomly arranged and move across a hexagonal lattice surface with the direction of motion of the head segment being determined probabilistically: the body and tail segments follow the path of the head. The analysis of the motion and interactions allow statistically meaningful data to be obtained regarding the number of generated spools, radial distribution in the distance between spools, and the average spool circumference lengths which can be compared to experimental results. This technique will aid in predictions of the formation process of nanowires and nanospools. Information regarding the kinetics and microstructure of any system can be extracted through this tool by the manipulation in the time and space dimensions. Chemical reactions of thiophene with organic molecules are of interest to chemically modify thermally deposited coatings or thin films of conductive polymers. Energy barriers are identified for reactive systems involving thiophene and small hydrocarbon radicals. The transition states for these reactive systems occurred through hydrogen abstraction. The results provide quantum mechanical level insights into the chemical processes that occur in the chemical modification processes described above, such as Surface Polymerization by Ion-Assisted Deposition (SPIAD), electropolymerization, and ion beam deposition. Enthalpies of

  6. Photonics and Optoelectronics (United States)


    DARPA NNI/NNCO BRI (2D Materials & Devices Beyond Graphene – planning phase) LRIR PIs Szep – RY: PICS Quantum Information...vertically from plasmonic filters into Si CMOS image sensor diodes via PMMA dielectric and SiNx vertical light couplers - •Designed and implemented signal...model) Future: Metasurfaces/ Meta Photonics, Quantum Integrated Nanophotonics, Ultra Low Power, Graphene Optoelectronics

  7. Nanowire Optoelectronics

    Directory of Open Access Journals (Sweden)

    Wang Zhihuan


    Full Text Available Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs, lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in “volumetric modes,”which have so far been presented in terms of Fabry–Perot (FP, and helical resonance modes. We report on finite-difference timedomain (FDTD simulations with the aim of identifying the dependence of these modes on geometry (length, width, tapering, shape (cylindrical, hexagonal, core–shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption and downward transitions (emission of light inNWs; rather, the electronic transition rates should be considered. We discuss this “rate management” scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  8. Nanocrystals of Cesium Lead Halide Perovskites (CsPbX₃, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut. (United States)

    Protesescu, Loredana; Yakunin, Sergii; Bodnarchuk, Maryna I; Krieg, Franziska; Caputo, Riccarda; Hendon, Christopher H; Yang, Ruo Xi; Walsh, Aron; Kovalenko, Maksym V


    Metal halides perovskites, such as hybrid organic-inorganic CH3NH3PbI3, are newcomer optoelectronic materials that have attracted enormous attention as solution-deposited absorbing layers in solar cells with power conversion efficiencies reaching 20%. Herein we demonstrate a new avenue for halide perovskites by designing highly luminescent perovskite-based colloidal quantum dot materials. We have synthesized monodisperse colloidal nanocubes (4-15 nm edge lengths) of fully inorganic cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I or mixed halide systems Cl/Br and Br/I) using inexpensive commercial precursors. Through compositional modulations and quantum size-effects, the bandgap energies and emission spectra are readily tunable over the entire visible spectral region of 410-700 nm. The photoluminescence of CsPbX3 nanocrystals is characterized by narrow emission line-widths of 12-42 nm, wide color gamut covering up to 140% of the NTSC color standard, high quantum yields of up to 90%, and radiative lifetimes in the range of 1-29 ns. The compelling combination of enhanced optical properties and chemical robustness makes CsPbX3 nanocrystals appealing for optoelectronic applications, particularly for blue and green spectral regions (410-530 nm), where typical metal chalcogenide-based quantum dots suffer from photodegradation.

  9. Ge-on-Si optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jifeng, E-mail: [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Camacho-Aguilera, Rodolfo; Bessette, Jonathan T.; Sun, Xiaochen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wang Xiaoxin [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Cai Yan; Kimerling, Lionel C.; Michel, Jurgen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)


    Electronic-photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic-photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become an attractive solution for monolithic optoelectronics. In this paper we will review recent progress in Ge-on-Si optoelectronics, including photodetectors, electroabsorption modulators, and lasers. The performance of these devices has been enhanced by band-engineering such as tensile strain and n-type doping, which transforms Ge towards a direct gap material. Selective growth reduces defect density and facilitates monolithic integration at the same time. Ge-on-Si photodetectors have approached or exceeded the performance of their III-V counterparts, with bandwidth-efficiency product > 30 GHz for p-i-n photodiodes and bandwidth-gain product > 340 GHz for avalanche photodiodes. Enhanced Franz-Keldysh effect in tensile-strained Ge offers ultralow energy photonic modulation with < 30 fJ/bit energy consumption and > 100 GHz intrinsic bandwidth. Room temperature optically-pumped lasing as well as electroluminescence has also been achieved from the direct gap transition of band-engineered Ge-on-Si waveguides. These results indicate that band-engineered Ge-on-Si is promising to achieve monolithic active optoelectronic devices on a Si platform.

  10. Progress on the optoelectronic functional organic crystals

    Institute of Scientific and Technical Information of China (English)


    Organic crystals constructed by pi-conjugated molecules have been paid great attention to in the field of organic optoelectronic materials. The superiorities of these organic crystal materials, such as high thermal stability, highly ordered structure, and high carrier mobility over the amorphous thin film ma-terials, make them attractive candidates for optoelectronic devices. Single crystal with definite struc-ture provides a model to investigate the basic interactions between the molecules (supramolecular interaction), and the relationship between molecular stacking modes and optoelectronic performance (luminescence and carrier mobility). Through modulating molecular arrangement in organic crystal, the luminescence efficiency of organic crystal has exceeded 80% and carrier mobility has been up to the level of 10 cm2·V?1·s?1. Amplified stimulated emission phenomena have been observed in many crys-tals. In this paper, we will emphatically introduce the progress in optoelectronic functional organic crystals and some correlative principle.

  11. Progress on the optoelectronic functional organic crystals

    Institute of Scientific and Technical Information of China (English)

    WANG Huan; XIE ZengQi; Ma YuGuang; Shen JiaCong


    Organic crystals constructed by pi-conjugated molecules have been paid great attention to in the field of organic optoelectronic materials. The superiorities of these organic crystal materials, such as high thermal stability, highly ordered structure, and high carrier mobility over the amorphous thin film materials, make them attractive candidates for optoelectronic devices. Single crystal with definite structure provides a model to investigate the basic interactions between the molecules (supramolecular interaction), and the relationship between molecular stacking modes and optoelectronic performance (luminescence and carrier mobility). Through modulating molecular arrangement in organic crystal, the luminescence efficiency of organic crystal has exceeded 80% and carrier mobility has been up to the level of 10 cm2·V-1·s-1. Amplified stimulated emission phenomena have been observed in many crystals. In this paper, we will emphatically introduce the progress in optoelectronic functional organic crystals and some correlative principle.

  12. Atomic Defects in Two-Dimensional Materials: From Single-Atom Spectroscopy to Functionalities in Opto-/Electronics, Nanomagnetism, and Catalysis. (United States)

    Hong, Jinhua; Jin, Chuanhong; Yuan, Jun; Zhang, Ze


    Two-dimensional layered graphene-like crystals including transition-metal dichalcogenides (TMDs) have received extensive research interest due to their diverse electronic, valleytronic, and chemical properties, with the corresponding optoelectronics and catalysis application being actively explored. However, the recent surge in two-dimensional materials science is accompanied by equally great challenges, such as defect engineering in large-scale sample synthesis. It is necessary to elucidate the effect of structural defects on the electronic properties in order to develop an application-specific strategy for defect engineering. Here, two aspects of the existing knowledge of native defects in two-dimensional crystals are reviewed. One is the point defects emerging in graphene and hexagonal boron nitride, as probed by atomically resolved electron microscopy, and their local electronic properties, as measured by single-atom electron energy-loss spectroscopy. The other will focus on the point defects in TMDs and their influence on the electronic structure, photoluminescence, and electric transport properties. This review of atomic defects in two-dimensional materials will offer a clear picture of the defect physics involved to demonstrate the local modulation of the electronic properties and possible benefits in potential applications in magnetism and catalysis.

  13. Ab initio investigations of the strontium gallium nitride ternaries Sr 3GaN3 and Sr6GaN5: Promising materials for optoelectronic

    KAUST Repository

    Goumri-Said, Souraya


    Sr3GaN3 and Sr6GaN5 could be promising potential materials for applications in the microelectronics, optoelectronics and coating materials areas of research. We studied in detail their structural, elastic, electronic, optical as well as the vibrational properties, by means of density functional theory framework. Both of these ternaries are semiconductors, where Sr3GaN3 exhibits a small indirect gap whereas Sr6GaN5 has a large direct gap. Indeed, their optical properties are reported for radiation up to 40 eV. Charge densities contours, Hirshfeld and Mulliken populations, are reported to investigate the role of each element in the bonding. From the mechanical properties calculation, it is found that Sr6GaN5 is harder than Sr3GaN3, and the latter is more anisotropic than the former. The phonon dispersion relation, density of phonon states and the vibrational stability are reported from the density functional perturbation theory calculations. © 2013 IOP Publishing Ltd.

  14. Optoelectronic Characterization by Advanced Ab-Initio Methods of Novel Photovoltaic Intermediate Band Materials = Caracterización optoelectrónica por métodos ab-initio avanzados de nuevos materiales fotovoltaicos de banda intermedia


    Aguilera Bonet, Irene


    Intermediate-band materials represent nowadays one of the most promising proposals in the quest for more efficient, lower-cost solar cells. In this thesis we present a deep study of transition-metal substituted semiconductors based on their optoelectronic properties. These materials were proposed as high efficiency photovoltaic absorbers for intermediate-band solar cells for showing a partiallyfilled band placed inside the band gap of the parent semiconductor which enables the absorption of p...

  15. Nanofabrication of Hybrid Optoelectronic Devices (United States)

    Dibos, Alan Michael

    The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can yield a nanoscale solar cell, and modeling of optical absorption and exciton diffusion in this device can provide insight into the efficiency of charge separation. Second, we use an on-chip nanowire light emitting diode to pump a colloidal quantum dot coupled to a silver waveguide. The resulting device is an electro-optic single plasmon source. Finally, we transfer diamond waveguides onto near-field avalanche photodiodes fabricated from GaAs. Embedded in the diamond waveguides are nitrogen vacancy color centers, and the mapping of emission from these single-photon sources is demonstrated using our on-chip detectors, eliminating the need for external photodetectors on an optical table. These studies show the promise of hybrid optoelectronic devices at the nanoscale with applications in alternative energy, optical communication, and quantum optics.

  16. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst


    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  17. Mid-infrared Semiconductor Optoelectronics

    CERN Document Server

    Krier, Anthony


    The practical realisation of optoelectronic devices operating in the 2–10 µm (mid-infrared) wavelength range offers potential applications in a variety of areas from environmental gas monitoring around oil rigs and landfill sites to the detection of pharmaceuticals, particularly narcotics. In addition, an atmospheric transmission window exists between 3 µm and 5 µm that enables free-space optical communications, thermal imaging applications and the development of infrared measures for "homeland security". Consequently, the mid-infrared is very attractive for the development of sensitive optical sensor instrumentation. Unfortunately, the nature of the likely applications dictates stringent requirements in terms of laser operation, miniaturisation and cost that are difficult to meet. Many of the necessary improvements are linked to a better ability to fabricate and to understand the optoelectronic properties of suitable high-quality epitaxial materials and device structures. Substantial progress in these m...

  18. III-Nitride nanowire optoelectronics (United States)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian


    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  19. Optoelectronics circuits manual

    CERN Document Server

    Marston, R M


    Optoelectronics Circuits Manual covers the basic principles and characteristics of the best known types of optoelectronic devices, as well as the practical applications of many of these optoelectronic devices. The book describes LED display circuits and LED dot- and bar-graph circuits and discusses the applications of seven-segment displays, light-sensitive devices, optocouplers, and a variety of brightness control techniques. The text also tackles infrared light-beam alarms and multichannel remote control systems. The book provides practical user information and circuitry and illustrations.

  20. Mutual alloying of XAs (X=Ga, In, Al) materials: Tuning the optoelectronic and thermodynamic properties for solar energy applications

    KAUST Repository

    Haq, Bakhtiar Ul


    In the present work we did mutual alloying of the versatile XAs (X=Ga, In, Al) materials in order to improve their efficiency and enhance their range of technological applications using state of the art first principles method. We investigate the structural, electronic and thermodynamic properties of Ga1-xAlxAs, Ga1-xInxAs and In1-xAlxAs for x=0.25, 0.50, and 0.75. Calculations have been performed using the density functional theory (DFT) as implemented within the full potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. For exchange and correlation energy treatment, we employed the local density approximations (LDA) as proposed by Wang and Perdew and the generalized gradient approximation (GGA) from Perdew et al. proposed. To calculate the accurate band structure, recently modified Becke Johnson (mBJ) potential was suggested as an alternative. Our calculations show a linear fall in the lattice constant in contrast to linear rise in bulk moduli of Ga1-xAlxAs and In1-xAlxAs with the increase of Al concentration. However the change of indium concentration in Ga1-xInxAs is displaying a reverse effect. The energy band gap of Ga1-xAlxAs and In1-xAlxAs was found to be increased, where a crossover from direct to indirect band gap has been observed with the increase of Al concentration. This direct to indirect crossover was found at 93.4% of Al concentration for Ga1-xAlxAs and at 84.63% of Al concentration for In1-xAlxAs. The effect of the mutual alloying of XAs materials on the thermodynamic properties is comprehensively reported. © 2013 Elsevier Ltd.

  1. Integrated Silicon Optoelectronics

    CERN Document Server

    Zimmermann, Horst K


    Integrated Silicon Optoelectronics synthesizes topics from optoelectronics and microelectronics. The book concentrates on silicon as the major base of modern semiconductor devices and circuits. Starting from the basics of optical emission and absorption, as well as from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed. Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included. The book, furthermore, contains a review of the newest state of research on eagerly anticipated silicon light emitters. In order to cover the topics comprehensively, also included are integrated waveguides, gratings, and optoelectronic power devices. Numerous elaborate illustrations facilitate and enhance comprehension. This extended edition will be of value to engineers, physicists, and scientists in industry and at universities. The book is also recommended to graduate student...

  2. Characterization of Structural Defects in Wide Band-Gap Compound Materials for Semiconductor and Opto-Electronic Applications (United States)

    Goue, Ouloide Yannick

    Single crystals of binary and ternary compounds are touted to replace silicon for specialized applications in the semiconductor industry. However, the relative high density of structural defects in those crystals has hampered the performance of devices built on them. In order to enhance the performance of those devices, structurally perfect single crystals must be grown. The aim of this thesis is to investigate the interplay between crystal growth process and crystal quality as well as structural defect types and transport property. To this end, the thesis is divided into two parts. The first part provides a general review of the theory of crystal growth (chapter I), an introduction to the materials being investigated (chapter II and III) and the characterization techniques being used (chapter IV). • In chapter I, a brief description of the theory of crystal growth is provided with an eye towards the driving force behind crystal nucleation and growth along with the kinetic factors affecting crystal growth. The case of crystal growth of silicon carbide (SiC) by physical vapor transport (PVT) and chemical vapor deposition (CVD) is discussed. The Bridgman, travelling heater method (THM) and physical transport growth of cadmium zinc telluride (CZT) is also treated. In chapters II and III, we introduce the compound materials being investigated in this study. While a description of their crystal structure and properties is provided, the issues associated with their growth are discussed. In chapter IV, a description of the characterization techniques used in these studies is presented. These techniques are synchrotron X-ray topography (SXRT), transmission electron microscopy, transmission infrared microscopy (TIM), micro-Raman spectroscopy (muRS) and light microscopy. Extensive treatment of SXRT technique is also provided. In the second part, the experimental results obtained in the course of these studies are presented and discussed. These results are divided into

  3. Multiple Quantum Well (MQW) Devices For Monolithic Integrated Optoelectronics (United States)

    Wood, Thomas H.


    Semiconductor MQWs represent a new technology for opto-electronics. These MQWs have an electroabsorption effect approximately 50 times larger than conventional semiconductors. They are compatible with existing source and detector material systems and produce devices that are compact and high speed, which makes them useful for monolithic integrated optoelectronic devices.

  4. Optoelectronic Mounting Structure

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Gene R. (Albuquerque, NM); Armendariz, Marcelino G. (Albuquerque, NM); Baca, Johnny R. F. (Albuquerque, NM); Bryan, Robert P. (Albuquerque, NM); Carson, Richard F. (Albuquerque, NM); Chu, Dahwey (Albuquerque, NM); Duckett, III, Edwin B. (Albuquerque, NM); McCormick, Frederick B. (Albuquerque, NM); Peterson, David W. (Sandia Park, NM); Peterson, Gary D. (Albuquerque, NM); Reber, Cathleen A. (Corrales, NM); Reysen, Bill H. (Lafayette, CO)


    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  5. Glass-Forming Organic Semiconductors for Optoelectronics

    Directory of Open Access Journals (Sweden)



    Full Text Available Organic electronics and optoelectronics are newly emerging fields of science and technology that cover chemistry, physics, and materials science. Electronic and optoelectronic devices using organic materials are attractive because of the materials characteristics, potentially low cost, and capability of large-area, flexible device fabrication. Such devices as OLEDs, OPVs, and OFETs involve charge transport as a main process in their operation processes, and therefore, require high-performance charge-transporting materials. This review article focuses on charge-transporting materials for use in OLEDs, OPVs, and OFETs. We have tried to arrange the charge-transporting materials in order by classifying them on the basis of their molecular structures. Molecular design concepts for charge-transporting materials and their charge-transport properties are discussed.

  6. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B


    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  7. Optoelectronic packaging: A review

    Energy Technology Data Exchange (ETDEWEB)

    Carson, R.F.


    Optoelectronics and photonics hold great potential for high data-rate communication and computing. Wide using in computing applications was limited first by device technologies and now suffers due to the need for high-precision, mass-produced packaging. The use of phontons as a medium of communication and control implies a unique set of packaging constraints that was not present in traditional telecommunications applications. The state-of-the-art in optoelectronic packaging is now driven by microelectric techniques that have potential for low cost and high volume manufacturing.

  8. Electromagnetic Theory for Microwaves and Optoelectronics

    CERN Document Server

    Zhang, Keqian


    This book is a first year graduate text on electromagnetic fields and waves. At the same time it serves as a useful reference for researchers and engineers in the areas of microwaves and optoelectronics. Following the presentation of the physical and mathematical foundations of electromagnetic theory, the book discusses the field analysis of electromagnetic waves confined in material boundaries, or so-called guided waves, electromagnetic waves in the dispersive media and anisotropic media, Gaussian beams and scalar diffraction theory. The theories and methods presented in the book are foundations of wireless engineering, microwave and millimeter wave techniques, optoelectronics and optical fiber communication.

  9. Small Molecule Organic Optoelectronic Devices (United States)

    Bakken, Nathan

    Organic optoelectronics include a class of devices synthesized from carbon containing 'small molecule' thin films without long range order crystalline or polymer structure. Novel properties such as low modulus and flexibility as well as excellent device performance such as photon emission approaching 100% internal quantum efficiency have accelerated research in this area substantially. While optoelectronic organic light emitting devices have already realized commercial application, challenges to obtain extended lifetime for the high energy visible spectrum and the ability to reproduce natural white light with a simple architecture have limited the value of this technology for some display and lighting applications. In this research, novel materials discovered from a systematic analysis of empirical device data are shown to produce high quality white light through combination of monomer and excimer emission from a single molecule: platinum(II) bis(methyl-imidazolyl)toluene chloride (Pt-17). Illumination quality achieved Commission Internationale de L'Eclairage (CIE) chromaticity coordinates (x = 0.31, y = 0.38) and color rendering index (CRI) > 75. Further optimization of a device containing Pt-17 resulted in a maximum forward viewing power efficiency of 37.8 lm/W on a plain glass substrate. In addition, accelerated aging tests suggest high energy blue emission from a halogen-free cyclometalated platinum complex could demonstrate degradation rates comparable to known stable emitters. Finally, a buckling based metrology is applied to characterize the mechanical properties of small molecule organic thin films towards understanding the deposition kinetics responsible for an elastic modulus that is both temperature and thickness dependent. These results could contribute to the viability of organic electronic technology in potentially flexible display and lighting applications. The results also provide insight to organic film growth kinetics responsible for optical

  10. Polymer optoelectronic structures for retinal prosthesis. (United States)

    Gautam, Vini; Narayan, K S


    This commentary highlights the effectiveness of optoelectronic properties of polymer semiconductors based on recent results emerging from our laboratory, where these materials are explored as artificial receptors for interfacing with the visual systems. Organic semiconductors based polymer layers in contact with physiological media exhibit interesting photophysical features, which mimic certain natural photoreceptors, including those in the retina. The availability of such optoelectronic materials opens up a gateway to utilize these structures as neuronal interfaces for stimulating retinal ganglion cells. In a recently reported work entitled "A polymer optoelectronic interface provides visual cues to a blind retina," we utilized a specific configuration of a polymer semiconductor device structure to elicit neuronal activity in a blind retina upon photoexcitation. The elicited neuronal signals were found to have several features that followed the optoelectronic response of the polymer film. More importantly, the polymer-induced retinal response resembled the natural response of the retina to photoexcitation. These observations open up a promising material alternative for artificial retina applications.

  11. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica


    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  12. Optoelectronics of Molecules and Polymers

    CERN Document Server

    Moliton, André


    Optoelectronic devices are being developed at an extraordinary rate. Organic light emitting diodes, photovoltaic devices and electro-optical modulators are pivotal to the future of displays, photosensors and solar cells, and communication technologies. This book details the theories underlying the relevant mechanisms in organic materials and covers, at a basic level, how the organic components are made. The first part of this book introduces the fundamental theories used to detail ordered solids and localised energy levels. The methods used to determine energy levels in perfectly ordered molecular and macromolecular systems are discussed, making sure that the effects of quasi-particles are not missed. The function of excitons and their transfer between two molecules are studied, and the problems associated with interfaces and charge injection into resistive media are presented. The second part details technological aspects such as the fabrication of devices based on organic materials by dry etching. The princ...

  13. Study of optoelectronic properties of thin film solar cell materials Cu2ZnSn(S,Se)4 using multiple correlative spatially-resolved spectroscopy techniques (United States)

    Chen, Qiong

    Containing only earth abundant and environmental friendly elements, quaternary compounds Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe 4 (CZTSe) are considered as promising absorber materials for thin film solar cells. The best record efficiency for this type of thin film solar cell is now 12.6%. As a promising photovoltaic (PV) material, the electrical and optical properties of CZTS(Se) have not been well studied. In this work, an effort has been made to understand the optoelectronic and structural properties, in particular the spatial variations, of CZTS(Se) materials and devices by correlating multiple spatially resolved characterization techniques with sub-micron resolution. Micro-Raman (micro-Raman) spectroscopy was used to analyze the chemistry compositions in CZTS(Se) film; Micro-Photoluminescence (micro-PL) was used to determine the band gap and possible defects. Micro-Laser-Beam-Induced-Current (micro-LBIC) was used to examine the photo-response of CZTS(Se) solar cell in different illumination conditions. Micro-reflectance was used to estimate the reflectance loss. And Micro-I-V measurement was used to compare important electrical parameters from CZTS(Se) solar cells with different device structure or absorber compositions. Scanning electron microscopy and atomic force microscopy were used to characterize the surface morphology. Successfully integrating and correlating these techniques was first demonstrated during the course of this work in our laboratory, and this level of integration and correlation has been rare in the field of PV research. This effort is significant not only for this particular project and also for a wide range of research topics. Applying this approach, in conjunction with high-temperature and high-excitation-power optical spectroscopy, we have been able to reveal the microscopic scale variations among samples and devices that appeared to be very similar from macroscopic material and device characterizations, and thus serve as a very powerful tool

  14. Opto-electronic devices from block copolymers and their oligomers.

    NARCIS (Netherlands)

    Hadziioannou, G


    This paper presents research activities towards the development of polymer materials and devices for optoelectronics, An approach to controlling the conjugation length and transferring the luminescence properties of organic molecules to polymers through black copolymers containing well-defined conju

  15. Graphene Photonics and Optoelectronics


    Bonaccorso, F.; Z. Sun; Hasan, T.; Ferrari, A. C.


    The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, ...

  16. Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

    Directory of Open Access Journals (Sweden)

    Bing Huang


    Full Text Available Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double-sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

  17. Metal oxides for optoelectronic applications. (United States)

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio


    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  18. Metal oxides for optoelectronic applications (United States)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio


    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  19. Optoelectronic device with nanoparticle embedded hole injection/transport layer (United States)

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA


    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  20. Intriguing Optoelectronic Properties of Metal Halide Perovskites. (United States)

    Manser, Joseph S; Christians, Jeffrey A; Kamat, Prashant V


    A new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewed with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH3NH3PbI3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2-dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.

  1. Integrated terahertz optoelectronics (United States)

    Liang, Guozhen; Wang, Qi Jie


    Currently, terahertz (THz) optical systems are based on bulky free-space optics. This is due to the lack of a common platform onto which different THz components, e.g., source, waveguide, modulator and detector, can be monolithically integrated. With the development of THz quantum cascade laser (QCL), it has been realized that the QCL chip may be such a platform for integrated THz photonics. Here, we report our recent works where the THz QCL is integrated with passive or optoelectronic components. They are: 1) integrated graphene modulator with THz QCL achieving 100% modulation depth and fast speed; 2) phase-locked THz QCL with integrated plasmonic waveguide and subwavelength antennas realizing dynamically widely tunable polarizations.

  2. Optoelectronic Devices Advanced Simulation and Analysis

    CERN Document Server

    Piprek, Joachim


    Optoelectronic devices transform electrical signals into optical signals and vice versa by utilizing the sophisticated interaction of electrons and light within micro- and nano-scale semiconductor structures. Advanced software tools for design and analysis of such devices have been developed in recent years. However, the large variety of materials, devices, physical mechanisms, and modeling approaches often makes it difficult to select appropriate theoretical models or software packages. This book presents a review of devices and advanced simulation approaches written by leading researchers and software developers. It is intended for scientists and device engineers in optoelectronics, who are interested in using advanced software tools. Each chapter includes the theoretical background as well as practical simulation results that help to better understand internal device physics. The software packages used in the book are available to the public, on a commercial or noncommercial basis, so that the interested r...

  3. Deformable paper origami optoelectronic devices

    KAUST Repository

    He, Jr-Hau


    Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a deformable pattern. Thin electrode layers and semiconductor nanowire layers can be attached to the substrate, creating the optoelectronic device. The devices can be highly deformable, e.g. capable of undergoing strains of 500% or more, bending angles of 25° or more, and/or twist angles of 270° or more. Methods of making the deformable optoelectronic devices and methods of using, e.g. as a photodetector, are also provided.

  4. Graphene optoelectronics synthesis, characterization, properties, and applications

    CERN Document Server

    bin M Yusoff, Abdul Rashid


    This first book on emerging applications for this innovative material gives an up-to-date account of the many opportunities graphene offers high-end optoelectronics.The text focuses on potential as well as already realized applications, discussing metallic and passive components, such as transparent conductors and smart windows, as well as high-frequency devices, spintronics, photonics, and terahertz devices. Also included are sections on the fundamental properties, synthesis, and characterization of graphene. With its unique coverage, this book will be welcomed by materials scientists, solid-

  5. Systematic evaluation of a new organic material: 1-methyl-1H-imidazol-3-ium-2,4,6-trinitrobenzene-1,3-bis(olate) for optoelectronics through spectral, structural, electrical, optical, quantum chemical and Hirshfeld surface studies (United States)

    Dhamodharan, P.; Sathya, K.; Dhandapani, M.


    A new organic material, 1-methyl-1H-imidazol-3-ium-2,4,6-trinitrobenzene-1,3-bis(olate) (MITB), was synthesized and crystallized by solution growth-slow evaporation technique at ambient temperature. The characteristic functional groups in MITB were identified from FT-IR spectrum. 1H, 13C and DEPT-135 NMR spectroscopic techniques were used to ascertain types of carbons and protons in MITB. The compound crystallizes in the monoclinic system with a space group of P21/c. The electrostatic attraction between anions and cations stabilizes the crystal lattice and the N-H…O and C-H…O hydrogen bonds linking the cations and anions supplement the stable three dimensional networks. The material was thermally stable up to 178 °C. The molecular structure was optimized by Gaussian 09 program at B3LYP/6-311++G(d,p) level of basis set. Hydrogen bonding interactions are responsible for greater hyperpolarizability value of MITB and the value was found to be 34 times greater than that of reference material, urea. HOMO-LUMO, electrostatic potential surface and Mulliken atomic charges were calculated to explore covalent and non covalent interactions present in MITB. Hirshfeld surface analysis was carried out to estimate prominent covalent and non covalent interactions. Dielectric constant and dielectric loss have been determined to find MITB's suitability for optoelectronic applications.

  6. Ultrafast Graphene Photonics and Optoelectronics (United States)


    structures that consist of a sheet of graphene and a plasma substrate such as a metal, a doped semiconductor, or another graphene layer. Using these...AFRL-AFOSR-JP-TR-2017-0032 Ultrafast Graphene Photonics and Optoelectronics Kuang-Hsiung Wu National Chiao Tung University Final Report 04/14/2017...DATES COVERED (From - To) 18 Apr 2013 to 17 Apr 2016 4. TITLE AND SUBTITLE Ultrafast Graphene Photonics and Optoelectronics 5a.  CONTRACT NUMBER 5b

  7. Reconfigurable Integrated Optoelectronics

    Directory of Open Access Journals (Sweden)

    Richard Soref


    Full Text Available Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs and photonic integrated circuits (PICs manufactured in a high-volume foundry. We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics. This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the electro-optical building blocks. We illustrate these modules in detail and discuss 3D ROEIC chips for the highest-performance signal processing. We present examples of our module theory for RPIC optical lattice filters already constructed, and we propose new ROEICs for directed optical logic, large-scale matrix switching, and 2D beamsteering of a phased-array microwave antenna. In general, large-scale-integrated ROEICs will enable significant applications in computing, quantum computing, communications, learning, imaging, telepresence, sensing, RF/microwave photonics, information storage, cryptography, and data mining.

  8. Statistical conjugated polymers comprising optoelectronically distinct units. (United States)

    Hollinger, Jon; Sun, Jing; Gao, Dong; Karl, Dominik; Seferos, Dwight S


    Poly(3-heptylselenophene)-stat-poly(3-hexylthiophene) is synthesized and characterized in terms of its crystallinity and performance in an organic photovoltaic (OPV) cell. Despite the random distribution of units along the polymer main chain, the material is semi-crystalline, as demonstrated by differential scanning calorimetry and wide-angle X-ray diffraction. Thin-film absorption suggests an increased compatibility than seen with 3-hexylselenophene monomer. Optoelectronic properties are an average of the two homopolymers, and OPV performance is enhanced by a broadened absorption profile and a favorable morphology.

  9. Influence of crossed electric and quantizing magnetic fields on the Einstein relation in nonlinear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestion for experimental determination

    Energy Technology Data Exchange (ETDEWEB)

    Pahari, S. [Administration Department, Jadavpur University, Kolkata 700 032 (India); Bhattacharya, S. [Nano Scale Device Research Laboratory, Centre for Electronics Design and Technology, Indian Institute of Science, Bangalore 560 012 (India); De, D. [Department of Computer Science and Engineering, West Bengal University of Technology, BF 142, Sector I, Kolkata 700 064, West Bengal (India); Adhikari, S.M.; Niyogi, A. [Department of Electronic Science, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 70009 (India); Dey, A. [Department of Electronics, Kalyani Government of Engineering College, Kalyani, Nadia (India); Paitya, N. [Department of Electronic Science, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 70009 (India); Saha, S.C. [Department of Electronics, Mallabhum Institute of Technology, Brajaradhanagar, Gosanipur, Bankura (India); Ghatak, K.P., E-mail: [Department of Electronic Science, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 70009 (India); Bose, P.K. [National Institute of Technology, Agartala, Jirania, Tripura (West) 799055 (India)


    An attempt is made to study the Einstein relation for the diffusivity-to-mobility ratio (DMR) under crossed fields' configuration in nonlinear optical materials on the basis of a newly formulated electron dispersion law by incorporating the crystal field in the Hamiltonian and including the anisotropies of the effective electron mass and the spin-orbit splitting constants within the framework of kp formalisms. The corresponding results for III-V, ternary and quaternary compounds form a special case of our generalized analysis. The DMR has also been investigated for II-VI and stressed materials on the basis of various appropriate dispersion relations. We have considered n-CdGeAs{sub 2}, n-Hg{sub 1-x}Cd{sub x}Te, n-In{sub 1-x}Ga{sub x}As{sub y}P{sub 1-y} lattice matched to InP, p-CdS and stressed n-InSb materials as examples. The DMR also increases with increasing electric field and the natures of oscillations are totally band structure dependent with different numerical values. It has been observed that the DMR exhibits oscillatory dependences with inverse quantizing magnetic field and carrier degeneracy due to the Subhnikov-de Haas effect. An experimental method of determining the DMR for degenerate materials in the present case has been suggested.

  10. 1 H-pyrazolo[3,4- b]quinoline and 1 H-pyrazolo[3,4- b]quinoxaline derivatives as promising materials for optoelectronic applications (United States)

    Danel, Andrzej; Gondek, Ewa; Kityk, Iwan


    A review of recent studies of pyrazoloquinoline and quinoxaline derivative chromophore used as organic light emitting diodes and photovoltaic elements is done. We present both the principal ways of modifications of these materials as well as a possible chemical modifications to achieve more suitable technological parameters.

  11. In-situ nanochemistry for optoelectronics (United States)

    Kim, Won Jin

    This thesis describes recent results on simple methods to arrange nanosize objects such as semiconductor nanocrystals, noble metal nanoparticles, and upconversion nanophosphors by means of top-down processes. Specific focus is directed towards approaches to produce predefined patterns of various nanostructure materials using optical lithography for direct writing of films for optoelectronic and electronic devices. To obtain photo-patternability, the nanostructure materials [for example semiconductor nanocrystals (CdSe, CdTe, PbSe), metallic nanoparticles (Ag), upconversion nanophosphors (Er3+/Yb 3+ or Tm3+/Yb3+ co-doped NaYF4 ), and transparent conducting oxide nanoparticles (ITO, ZnO)] were functionalized by incorporation of the functional ligand t-butoxycarbonyl (t-BOC) which has an acid-labile moiety. The t-BOC group undergoes a cleavage, when subjected to UV irradiation in the presence of a photo acid generator (PAG) to releases isobutene and carbon dioxide. Depending on the need of the application, either the exposed regions (negative pattern) or the non-exposed regions (positive pattern) could be developed from the exposed films by appropriate solvent selection. The photo exposed regions of the film are rendered hydrophilic due to the degradation of the t-BOC, the un-exposed regions remain hydrophobic. This solubility change in the QDs is the basis of their patternablity. The un-exposed regions can be removed to obtain the negative pattern by washing with hydrophobic solvents, whereas the exposed regions can be selectively removed to obtain positive pattern by washing with hydrophilic solvents. This change in the surface chemistry results in the ability to photo-pattern the various nanostructure materials where desired for a number of optoelectronic device geometries. We demonstrate that the ultimate resolution (linewidth and spacing) of this technique is below submicron. Details on technological aspects concerning nanoparticle patterning as well as practical

  12. An introduction to optoelectronic sensors

    CERN Document Server

    Tajani, Antonella; Cutolo, Antonello


    This invaluable book offers a comprehensive overview of the technologies and applications of optoelectronic sensors. Based on the R&D experience of more than 70 engineers and scientists, highly representative of the Italian academic and industrial community in this area, this book provides a broad and accurate description of the state-of-the-art optoelectronic technologies for sensing. The most innovative approaches, such as the use of photonic crystals, squeezed states of light and microresonators for sensing, are considered. Application areas range from environment to medicine and healthcare

  13. Proceedings of the International Conference on II-VI Compounds and Related Optoelectronic Materials (6th) Held in Newport, Rhode Island on 13-17 September 1993 (United States)


    almost complete intermixing 0 AA of the well and barrier materials. 250 900 :350 400 45%0 500 For quantum wells annealed at temperatures Anealhrng...versus the reciprocal tempera- based quantum wells , where a almost complete tUre tor (dTe,-CdNnTe. (’dTe/CdMgTe and lli (’dTe/’ intermixing is...periodic solids. Of course, one requires t , Output DBR Y reflectors Ouantujm I Wells "Oupu 0.5 " 0 0.5 Output d Fig. 3.Schematic drawings of a quantum

  14. Optoelectronic devices, plasmonics, and photonics with topological insulators (United States)

    Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.


    Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

  15. Simple Optoelectronic Feedback in Microwave Oscillators (United States)

    Maleki, Lute; Iltchenko, Vladimir


    A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

  16. An optoelectronic fuel level sensor (United States)

    Murashkina, T. I.; Badeeva, E. A.; Badeev, A. V.; Savochkina, M. M.


    The block and schematic construction diagrams of a new optoelectronic fuel level sensor are considered. The operating principle of the sensor is based on registering the intensity value of the optical path reflected from the mirror, located on the reservoir bottom.

  17. Opto-electronic properties of charged conjugated molecules

    NARCIS (Netherlands)

    Fratiloiu, S.


    The aim of this thesis is to provide fundamental insight into the nature and opto-electronic properties of charge carriers on conjugated oligomers and polymers. Electronic structure, optical absorption properties and distribution of charge carriers along the chains of different conjugated materials

  18. Advances in wide bandgap SiC for optoelectronics

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini


    Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

  19. Optoelectronic Correlator Architecture for Shift Invariant Target Recognition

    CERN Document Server

    Monjur, Mehjabin S; Tripathi, Renu; Donoghue, John; Shahriar, M S


    In this paper, we present theoretical details and the underlying architecture of a hybrid optoelectronic correlator that correlates images using SLMs, detectors and VLSI chips. The proposed architecture bypasses the nonlinear material such as photorefractive polymer film by using detectors instead, and the phase information is yet conserved by the interference of plane waves with the images.


    African Journals Online (AJOL)


    Dec 31, 2014 ... These characteristics make it a suitable material for use in photodetectors[2]. .... photocurrent is increases due to generation of electron– hole pairs. .... [3] Sheng W.G., Hai L., Feng X., Jun C.D., Fang R.F., Rong Z. and Dou ...

  1. Telemedicine optoelectronic biomedical data processing system (United States)

    Prosolovska, Vita V.


    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  2. Electroactive and Optoelectronically Active Graphene Nanofilms

    DEFF Research Database (Denmark)

    Chi, Qijin

    As an atomic-scale-thick two-dimensional material, graphene has emerged as one of the most miracle materials and has generated intensive interest in physics, chemistry and even biology in the last decade [1, 2]. Nanoscale engineering and functionalization of graphene is a crucial step for many...... applications ranging from catalysis, electronic devices, sensors to advanced energy conversion and storage [3]. This talk highlights our recent studies on electroactive and optoelectronically active graphene ultrathin films for chemical sensors and energy technology. The presentation includes a general theme...... for functionalization of graphene nanosheets, followed by showing several case studies. Our systems cover redox-active nanoparticles, electroactive supramolecular ensembles and redox enzymes which are integrated with graphene nanosheets as building blocks for the construction of functional thin films or graphene papers....

  3. 2D semiconductor optoelectronics (United States)

    Novoselov, Kostya

    The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors, photovoltaic devices, etc. By taking the complexity and functionality of such van der Waals heterostructures to the next level we introduce quantum wells engineered with one atomic plane precision. Light emission from such quantum wells, quantum dots and polaritonic effects will be discussed.

  4. Optoelectronic Oscillators for Communication Systems (United States)

    Romeira, Bruno; Figueiredo, José

    We introduce and report recent developments on a novel five port optoelectronic voltage controlled oscillator consisting of a resonant tunneling diode (RTD) optical-waveguide integrated with a laser diode. The RTD-based optoelectronic oscillator (OEO) has both optical and electrical input and output ports, with the fifth port allowing voltage control. The RTD-OEO locks to reference radio-frequency (RF) sources by either optical or electrical injection locking techniques allowing remote synchronization, eliminating the need of impedance matching between traditional RF oscillators. RTD-OEO functions include generation, amplification and distribution of RF carriers, clock recovery, carrier recovery, modulation and demodulation and frequency synthesis. Self-injection locking operation modes, where small portions of the output electrical/optical signals are fed back into the electrical/optical input ports, are also proposed. The self-phase locked loop configuration can give rise to low-noise high-stable oscillations, not limited by the RF source performance and with no need of external optoelectronic conversion.

  5. Organic semiconductors as candidates for advanced optoelectronic devices:


    Bratina, Gvido; Hudej, Robert


    Organic semiconductors are gaining an increasing attention due to their promise of novel optoelectronic devices. The main attraction of these materials stems from their potential integration with flexible materials, which would result in ultrathin flexible multicolor displays. Basic electronic properties of typical representatives of organic semiconductors are reviewed. The operation of a light-emitting device based on organic semiconductors is fundamentally different from its inorganic count...

  6. Innovative Optoelectronic Materials and Structures Using OMVPE (United States)


    and G.W. Wicks," Monolithic Integration of an (Al)GaAs Laser and an Intracavity Electroabsorption Modulator using Selective Partial In- terdiffusion...Research (Topical meeting), Monterey, CA (April 9-11, 1991). 5. S. O’Brien, J.R. Shealy, and G.W. Wicks," Monolithic Integration of an (AI)GaAs Laser and...ingg(required in the original design) for smooth, repeatable substrate rotation a design change was needed. Recall that this reactor is integrated

  7. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. (United States)

    Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras; Coleman, Jonathan N; Strano, Michael S


    The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.

  8. Progress of Si-based Optoelectronic Devices

    Institute of Scientific and Technical Information of China (English)

    PENG Ying-cai; FU Guang-sheng; WANG Ying-long; SHANG Yong


    Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize ali-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si-based optoelectronic devices, such as light-emitting diodes,optical waveguides devices, Si photonic bandgap crystals,and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.

  9. Lasers and optoelectronics fundamentals, devices and applications

    CERN Document Server

    Maini, Anil K


    With emphasis on the physical and engineering principles, this book provides a comprehensive and highly accessible treatment of modern lasers and optoelectronics. Divided into four parts, it explains laser fundamentals, types of lasers, laser electronics & optoelectronics, and laser applications, covering each of the topics in their entirety, from basic fundamentals to advanced concepts. Key features include: exploration of technological and application-related aspects of lasers and optoelectronics, detailing both existing and emerging applications in industry, medical diag

  10. Optoelectronic tweezers for medical diagnostics (United States)

    Kremer, Clemens; Neale, Steven; Menachery, Anoop; Barrett, Mike; Cooper, Jonathan M.


    Optoelectronic tweezers (OET) allows the spatial patterning of electric fields through selected illumination of a photoconductive surface. This enables the manipulation of micro particles and cells by creating non-uniform electrical fields that then produce dielectrophoretic (DEP) forces. The DEP responses of cells differ and can produce negative or positive (repelled or attracted to areas of high electric field) forces. Therefore OET can be used to manipulate individual cells and separate different cell types from each other. Thus OET has many applications for medical diagnostics, demonstrated here with work towards diagnosing Human African Trypanosomiasis, also known as sleeping sickness.

  11. Indium phosphide nanowires and their applications in optoelectronic devices



    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In t...

  12. Low -Dimensional Halide Perovskites and Their Advanced Optoelectronic Applications (United States)

    Zhang, Jian; Yang, Xiaokun; Deng, Hui; Qiao, Keke; Farooq, Umar; Ishaq, Muhammad; Yi, Fei; Liu, Huan; Tang, Jiang; Song, Haisheng


    Metal halide perovskites are crystalline materials originally developed out of scientific curiosity. They have shown great potential as active materials in optoelectronic applications. In the last 6 years, their certified photovoltaic efficiencies have reached 22.1%. Compared to bulk halide perovskites, low-dimensional ones exhibited novel physical properties. The photoluminescence quantum yields of perovskite quantum dots are close to 100%. The external quantum efficiencies and current efficiencies of perovskite quantum dot light-emitting diodes have reached 8% and 43 cd A-1, respectively, and their nanowire lasers show ultralow-threshold room-temperature lasing with emission tunability and ease of synthesis. Perovskite nanowire photodetectors reached a responsivity of 10 A W-1 and a specific normalized detectivity of the order of 1012 Jones. Different from most reported reviews focusing on photovoltaic applications, we summarize the rapid progress in the study of low-dimensional perovskite materials, as well as their promising applications in optoelectronic devices. In particular, we review the wide tunability of fabrication methods and the state-of-the-art research outputs of low-dimensional perovskite optoelectronic devices. Finally, the anticipated challenges and potential for this exciting research are proposed.

  13. Optoelectronic Applications of Colloidal Quantum Dots (United States)

    Wang, Zhiping; Zhang, Nanzhu; Brenneman, Kimber; Wu, Tsai Chin; Jung, Hyeson; Biswas, Sushmita; Sen, Banani; Reinhardt, Kitt; Liao, Sicheng; Stroscio, Michael A.; Dutta, Mitra

    This chapter highlights recent optoelectronic applications of colloidal quantum dots (QDs). In recent years, many colloidal QD-based optoelectronic devices, and device concepts have been proposed and studied. Many of these device concepts build on traditional optoelectronic device concepts. Increasingly, many new optoelectronic device concepts have been based on the use of biomolecule QD complexes. In this chapter, both types of structures are discussed. Special emphasis is placed on new optoelectronic device concepts that incorporate DNA-based aptamers in biomolecule QD complexes. Not only are the extensions of traditional devices and concepts realizable, such as QD-based photo detectors, displays, photoluminescent and photovoltaic devices, light-emitting diodes (LEDs), photovoltaic devices, and solar cells, but new devices concepts such a biomolecule-based molecular sensors possible. This chapter highlights a number of such novel QD-based devices and device concepts.

  14. Wrapped optoelectronic devices and methods for making same

    Energy Technology Data Exchange (ETDEWEB)

    Curran, Seamus; Dias, Sampath; Alley, Nigel; Haldar, Amrita; Yambem, Soniya Devi; Kang-Shyang, Liao; Chaudhari, Prajakta


    In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wrap around a central axis wherein the cell includes a first conductive layer, a semi-conductive layer disposed over and in electrical communication with the first conductive layer, and a second conductive layer disposed over and in electrical communication with the semi-conductive layer. In various embodiments, methods for making optoelectronic devices are described herein. The methods may include forming an optoelectronic cell while flat and wrapping the optoelectronic cell around a central axis. The optoelectronic devices may be photovoltaic devices. Alternatively, the optoelectronic devices may be organic light emitting diodes.

  15. The Cellulose Nanofibers for Optoelectronic Conversion and Energy Storage

    Directory of Open Access Journals (Sweden)

    Yongfeng Luo


    Full Text Available Cellulose widely exists in plant tissues. Due to the large pores between the cellulose units, the regular paper is nontransparent that cannot be used in the optoelectronic devices. But some chemical and physical methods such as 2,2,6,6-tetramethylpiperidine-1-oxyl radical (TEMPO oxidation can be used to improve the pores scale between the cellulose units to reach nanometer level. The cellulose nanofibers (CNFs have good mechanical strength, flexibility, thermostability, and low thermal expansion. The paper made of these nanofibers represent a kind of novel nanostructured material with ultrahigh transparency, ultrahigh haze, conductivity, biodegradable, reproducible, low pollution, environment friendly and so on. These advantages make the novel nanostructured paper apply in the optoelectronic device possible, such as electronics energy storage devices. This kind of paper is considered most likely to replace traditional materials like plastics and glass, which is attracting widespread attention, and the related research has also been reported. The purpose of this paper is to review CNFs which are applied in optoelectronic conversion and energy storage.

  16. Optoelectronic and nonlinear optical processes in low dimensional semiconductors

    Indian Academy of Sciences (India)

    B P Singh


    Spatial confinement of quantum excitations on their characteristic wavelength scale in low dimensional materials offers unique possibilities to engineer the electronic structure and thereby control their physical properties by way of simple manipulation of geometrical parameters. This has led to an overwhelming interest in quasi-zero dimensional semiconductors or quantum dots as tunable materials for multitude of exciting applications in optoelectronic and nonlinear optical devices and quantum information processing. Large nonlinear optical response and high luminescence quantum yield expected in these systems is a consequence of huge enhancement of transition probabilities ensuing from quantum confinement. High quantum efficiency of photoluminescence, however, is not usually realized in the case of bare semiconductor nanoparticles owing to the presence of surface states. In this talk, I will focus on the role of quantum confinement and surface states in ascertaining nonlinear optical and optoelectronic properties of II–VI semiconductor quantum dots and their nanocomposites. I will also discuss the influence of nonlinear optical processes on their optoelectronic characteristics.

  17. Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene. (United States)

    Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung


    Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Opto-Electronic Oscillator and its Applications (United States)

    Yao, X. S.; Maleki, L.


    We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.

  19. Radiation effects in optoelectronic devices. [Review

    Energy Technology Data Exchange (ETDEWEB)

    Barnes, C.E.; Wiczer, J.J.


    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given.

  20. Optoelectronics-related competence building in Japanese and Western firms (United States)

    Miyazaki, Kumiko


    In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.

  1. Patterning of conjugated polymers for organic optoelectronic devices. (United States)

    Xu, Youyong; Zhang, Fan; Feng, Xinliang


    Conjugated polymers have been attracting more and more attention because they possess various novel electrical, magnetical, and optical properties, which render them useful in modern organic optoelectronic devices. Due to their organic nature, conjugated polymers are light-weight and can be fabricated into flexible appliances. Significant research efforts have been devoted to developing new organic materials to make them competitive with their conventional inorganic counterparts. It is foreseeable that when large-scale industrial manufacture of the devices made from organic conjugated polymers is feasible, they would be much cheaper and have more functions. On one hand, in order to improve the performance of organic optoelectronic devices, it is essential to tune their surface morphologies by techniques such as patterning. On the other hand, patterning is the routine requirement for device processing. In this review, the recent progress in the patterning of conjugated polymers for high-performance optoelectronic devices is summarized. Patterning based on the bottom-up and top-down methods are introduced. Emerging new patterning strategies and future trends for conventional patterning techniques are discussed.

  2. Metamaterial mirrors in optoelectronic devices

    KAUST Repository

    Esfandyarpour, Majid


    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

  3. Colloidal nanorod heterostructures for photovoltaics and optoelectronics (United States)

    Shim, Moonsub


    Colloidal quantum dots (QDs) synthesized in versatile, easy-to-process solutions are opening up exciting prospects in multiple areas, especially in biomedical imaging, photovoltaics, solid-state lighting and displays. The success of most of these prospects relies on high-quality heterostructures that improve optical properties. In particular, the core/shell heterostructure with a type I straddling band offset has been indispensable but the applicability is often limited to those exploiting only photoluminescence. QDs and their heterostructures can also be made with anisotropic shapes that allow access to essentially an unlimited number of combinations of size, shape and composition. Structures that allow enhancement of optical properties and physical accessibility for carrier injection/extraction simultaneously can open up new and exciting prospects in photovoltaics and optoelectronics. This topical review focuses on nanorod-based colloidal semiconductor heterostructures. Two-component, type II staggered band offset nanorod heterostructures capable of efficiently separating photoinduced charges are first discussed. Double heterojunction nanorods that contain three different phases are then considered with respect to their novelty and potential as emissive materials in light-emitting diodes. We conclude with an outlook on the possibility of developing colloidal nanorods that contain epitaxial interfaces beyond the conventional semiconductor heterojunctions.

  4. Prediction of Silicon-Based Layered Structures for Optoelectronic Applications (United States)

    Luo, Wei; Ma, Yanming; Gong, Xingao; Xiang, Hongjun; CCMG Team


    A method based on the particle swarm optimization (PSO) algorithm is presented to design quasi-two-dimensional (Q2D) materials. With this development, various single-layer and bi-layer materials in C, Si, Ge, Sn, and Pb were predicted. A new Si bi-layer structure is found to have a much-favored energy than the previously widely accepted configuration. Both single-layer and bi-layer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2andSi6H2 possessing quasi-direct band gaps of 0.75 eV and 1.59 eV, respectively. Their potential applications for light emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

  5. Optoelectronic microdevices for combined phototherapy (United States)

    Zharov, Vladimir P.; Menyaev, Yulian A.; Hamaev, V. A.; Antropov, G. M.; Waner, Milton


    In photomedicine in some of cases radiation delivery to local zones through optical fibers can be changed for the direct placing of tiny optical sources like semiconductor microlasers or light diodes in required zones of ears, nostrils, larynx, nasopharynx cochlea or alimentary tract. Our study accentuates the creation of optoelectronic microdevices for local phototherapy and functional imaging by using reflected light. Phototherapeutic micromodule consist of the light source, microprocessor and miniature optics with different kind of power supply: from autonomous with built-in batteries to remote supply by using pulsed magnetic field and supersmall coils. The developed prototype photomodule has size (phi) 8X16 mm and work duration with built-in battery and light diode up several hours at the average power from several tenths of mW to few mW. Preliminary clinical tests developed physiotherapeutic micrimodules in stomatology for treating the inflammation and in otolaryngology for treating tonsillitis and otitis are presented. The developed implanted electro- optical sources with typical size (phi) 4X0,8 mm and with remote supply were used for optical stimulation of photosensitive retina structure and electrostimulation of visual nerve. In this scheme the superminiature coil with 30 electrical integrated levels was used. Such devices were implanted in eyes of 175 patients with different vision problems during clinical trials in Institute of Eye's Surgery in Moscow. For functional imaging of skin layered structure LED arrays coupled photodiodes arrays were developed. The possibilities of this device for study drug diffusion and visualization small veins are discussed.

  6. III-V compound SC for optoelectronic devices

    Directory of Open Access Journals (Sweden)

    Sudha Mokkapati


    Full Text Available III-V compound semiconductors (SC have played a crucial role in the development of optoelectronic devices for a broad range of applications. Major applications of InP or GaAs based III-V compound SC are devices for optical fiber communications, infrared and visible LEDs/LDs and high efficiency solar cells. GaN based compounds are extremely important for short wavelength light emitters used in solid state lighting systems. We review the important device applications of various III-V compound SC materials.

  7. Electronic and optoelectronic nano-devices based on carbon nanotubes. (United States)

    Scarselli, M; Castrucci, P; De Crescenzi, M


    The discovery and understanding of nanoscale phenomena and the assembly of nanostructures into different devices are among the most promising fields of material science research. In this scenario, carbon nanostructures have a special role since, in having only one chemical element, they allow physical properties to be calculated with high precision for comparison with experiment. Carbon nanostructures, and carbon nanotubes (CNTs) in particular, have such remarkable electronic and structural properties that they are used as active building blocks for a large variety of nanoscale devices. We review here the latest advances in research involving carbon nanotubes as active components in electronic and optoelectronic nano-devices. Opportunities for future research are also identified.

  8. A Long-Term View on Perovskite Optoelectronics. (United States)

    Docampo, Pablo; Bein, Thomas


    Recently, metal halide perovskite materials have become an exciting topic of research for scientists of a wide variety of backgrounds. Perovskites have found application in many fields, starting from photovoltaics and now also making an impact in light-emitting applications. This new class of materials has proven so interesting since it can be easily solution processed while exhibiting materials properties approaching the best inorganic optoelectronic materials such as GaAs and Si. In photovoltaics, in only 3 years, efficiencies have rapidly increased from an initial value of 3.8% to over 20% in recent reports for the commonly employed methylammonium lead iodide (MAPI) perovskite. The first light emitting diodes and light-emitting electrochemical cells have been developed already exhibiting internal quantum efficiencies exceeding 15% for the former and tunable light emission spectra. Despite their processing advantages, perovskite optoelectronic materials suffer from several drawbacks that need to be overcome before the technology becomes industrially relevant and hence achieve long-term application. Chief among these are the sensitivity of the structure toward moisture and crystal phase transitions in the device operation regime, unreliable device performance dictated by the operation history of the device, that is, hysteresis, the inherent toxicity of the structure, and the high cost of the employed charge selective contacts. In this Account, we highlight recent advances toward the long-term viability of perovskite photovoltaics. We identify material decomposition routes and suggest strategies to prevent damage to the structure. In particular, we focus on the effect of moisture upon the structure and stabilization of the material to avoid phase transitions in the solar cell operating range. Furthermore, we show strategies to achieve low-cost chemistries for the development of hole transporters for perovskite solar cells, necessary to be able to compete with other

  9. Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection; Caracterisation de materiaux semi-isolants par spectroscopie de transitoirede courant photoinduit: materiaux INP dopes Fe pour la micro-optoelectronique et CDZNTE pour la detection nucleaire

    Energy Technology Data Exchange (ETDEWEB)

    Cherkaoui, K


    The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

  10. Optoelectronic line transmission an introduction to fibre optics

    CERN Document Server

    Tricker, Raymond L


    Optoelectronic Line Transmission: An Introduction to Fibre Optics presents a basic introduction as well as a background reference manual on fiber optic transmission. The book discusses the basic principles of optical line transmission; the advantages and disadvantages of optical fibers and optoelectronic signalling; the practical applications of optoelectronics; and the future of optoelectronics. The text also describes the theories of optical line transmission; fibers and cables for optical transmission; transmitters including light-emitting diodes and lasers; and receivers including photodi

  11. Laser applications in the electronics and optoelectronics industry in Japan (United States)

    Washio, Kunihiko


    This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

  12. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T.; Lonergan, Mark C.; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau; Javey, Ali


    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in VOC for the analyzed devices.

  13. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    KAUST Repository

    Wang, Hsin-Ping


    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.


    Institute of Scientific and Technical Information of China (English)

    Zeng-qi Xie; Bing Yang; Yu-guang Ma; Jia-cong Shen


    Functional organic molecular materials and conjugated oligomers or polymers now allow the low-cost fabrication of thin films for insertion into new generations of electronic and optoelectronic devices. The performance of these devices relies on the understanding and optimization of several complementary processes. Our goal is to discuss the relationship between the molecular stacking structures and their optoelectronic properties that are of importance in all these areas. The concept of intermolecular interaction should be taken here in the special sense that is inter-dipole coupling. Specifically, we will address the impact of inter-dipole interaction between adjacent molecules in aggregate state on the solid-state emission properties.

  15. Trends in optoelectronic perimeter security sensors (United States)

    Szustakowski, Mieczyslaw; Ciurapinski, Wiesław M.; Zyczkowski, Marek


    New trends in development of optoelectronic and radar systems with mixed technologies for detection, identification and visualization for critical infrastructure protection are presented. Network-based communication as well as new algorithms of intelligent vision surveillance and image fusion is described.

  16. Using optoelectronic sensors in the system PROTEUS (United States)

    Zyczkowski, M.; Szustakowski, M.; Ciurapinski, W.; Piszczek, M.


    The paper presents the concept of optoelectronic devices for human protection in rescue activity. The system consists of an ground robots with predicted sensor. The multisensor construction of the system ensures significant improvement of security of using on-situ like chemical or explosive sensors. The article show a various scenario of use for individual sensor in system PROTEUS.

  17. GaAs optoelectronic neuron arrays (United States)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri


    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  18. Concept of Quantum Geometry in Optoelectronic Processes in Solids: Application to Solar Cells. (United States)

    Nagaosa, Naoto; Morimoto, Takahiro


    The concept of topology is becoming more and more relevant to the properties and functions of electronic materials including various transport phenomena and optical responses. A pedagogical introduction is given here to the basic ideas and their applications to optoelectronic processes in solids.

  19. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides (United States)

    Congxin, Xia; Jingbo, Li


    Since two-dimensional (2D) graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalcogenides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some personal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

  20. Nanomaterials for Electronics and Optoelectronics (United States)

    Koehne, Jessica E.; Meyyappan, M.


    Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

  1. Growing perovskite into polymers for easy-processable optoelectronic devices (United States)

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe


    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  2. Bioinspired Transparent Laminated Composite Film for Flexible Green Optoelectronics. (United States)

    Lee, Daewon; Lim, Young-Woo; Im, Hyeon-Gyun; Jeong, Seonju; Ji, Sangyoon; Kim, Yong Ho; Choi, Gwang-Mun; Park, Jang-Ung; Lee, Jung-Yong; Jin, Jungho; Bae, Byeong-Soo


    Herein, we report a new version of a bioinspired chitin nanofiber (ChNF) transparent laminated composite film (HCLaminate) made of siloxane hybrid materials (hybrimers) reinforced with ChNFs, which mimics the nanofiber-matrix structure of hierarchical biocomposites. Our HCLaminate is produced via vacuum bag compressing and subsequent UV-curing of the matrix resin-impregnated ChNF transparent paper (ChNF paper). It is worthwhile to note that this new type of ChNF-based transparent substrate film retains the strengths of the original ChNF paper and compensates for ChNF paper's drawbacks as a flexible transparent substrate. As a result, compared with high-performance synthetic plastic films, such as poly(ethylene terephthalate), poly(ether sulfone), poly(ethylene naphthalate), and polyimide, our HCLaminate is characterized to exhibit extremely smooth surface topography, outstanding optical clarity, high elastic modulus, high dimensional stability, etc. To prove our HCLaminate as a substrate film, we use it to fabricate flexible perovskite solar cells and a touch-screen panel. As far as we know, this work is the first to demonstrate flexible optoelectronics, such as flexible perovskite solar cells and a touch-screen panel, actually fabricated on a composite film made of ChNF. Given its desirable macroscopic properties, we envision our HCLaminate being utilized as a transparent substrate film for flexible green optoelectronics.

  3. Laser hyperdoping silicon for enhanced infrared optoelectronic properties (United States)

    Warrender, Jeffrey M.


    Pulsed laser melting and rapid solidification have attracted interest for decades as a method to achieve impurity concentrations in silicon orders of magnitude above the equilibrium solubility limit. The incorporation of sulfur into silicon using this technique led to the observation of strong broadband infrared absorption in the resulting material. This observation, combined with interest in impurity band optoelectronic device concepts, has resulted in renewed interest in laser techniques for achieving high impurity concentrations. In this paper, I review the literature that led to the present understanding of laser hyperdoping and provide a summary of the optical and optoelectronic measurements made on sulfur hyperdoped silicon to date. I mention recent work exploring transition metal impurities and discuss how considerations discovered in early solidification and later rapid solidification work inform our approaches to kinetically trapping such impurities. I also provide a simplified picture of how a laser hyperdoping process is typically carried out, as an entry point for an experimentalist seeking to fabricate such layers.

  4. Terahertz optoelectronics with surface plasmon polariton diode. (United States)

    Vinnakota, Raj K; Genov, Dentcho A


    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  5. Performance Evaluation of an Integrated Optoelectronic Receiver

    Directory of Open Access Journals (Sweden)

    A. Vera-Marquina


    Full Text Available This work describes the optical and electrical characterization of an integrated optoelectronic receiver. The receiver is composed of a photodiode and a transimpedance amplifier, both fabricated in silicon technology using a 0.8 μm BiCMOS process. The total area occupied by the photodiode is of 10,000 μm2. In a first step, the generated photocurrent of the photodiode is measured for the wavelengths of 780 nm and 830 nm at different levels of optical power. In a second step, the responsivity and quantum efficiency parameters of the photodiode are computed. Finally, an electrical measurement including the transimpedance amplifier is achieved. A potential application for this optoelectronic receiver is on the first optical communications window.

  6. State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

    Directory of Open Access Journals (Sweden)

    Eng Png Ching


    Full Text Available Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc. and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

  7. Optoelectronic Properties of Semiconductor Quantum Dot Solids for Photovoltaic Applications. (United States)

    Chistyakov, A A; Zvaigzne, M A; Nikitenko, V R; Tameev, A R; Martynov, I L; Prezhdo, O V


    Quantum dot (QD) solids represent a new type of condensed matter drawing high fundamental and applied interest. Quantum confinement in individual QDs, combined with macroscopic scale whole materials, leads to novel exciton and charge transfer features that are particularly relevant to optoelectronic applications. This Perspective discusses the structure of semiconductor QD solids, optical and spectral properties, charge carrier transport, and photovoltaic applications. The distance between adjacent nanoparticles and surface ligands influences greatly electrostatic interactions between QDs and, hence, charge and energy transfer. It is almost inevitable that QD solids exhibit energetic disorder that bears many similarities to disordered organic semiconductors, with charge and exciton transport described by the multiple trapping model. QD solids are synthesized at low cost from colloidal solutions by casting, spraying, and printing. A judicious selection of a layer sequence involving QDs with different size, composition, and ligands can be used to harvest sunlight over a wide spectral range, leading to inexpensive and efficient photovoltaic devices.

  8. Digital optical computers at the optoelectronic computing systems center (United States)

    Jordan, Harry F.


    The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

  9. Spatially resolved optoelectronic characterization of perovskite lead iodide nanostructures (United States)

    Xiao, Rui; Peng, Xingyu; Hou, Yasen; Yu, Dong

    The high power conversion efficiency of organo-lead halide perovskite-based solar cells has attracted world-wide attention over the past few years. The high efficiency was believed to originate from the unusual properties including long carrier lifetimes and consequent long carrier diffusion lengths in these materials. Ion drift, ferroelectricity, and charge traps have been proposed to account for the efficient charge separation and photocurrent hysteresis. However, it remains unclear which mechanism is dominating. We fabricate field effect transistors (FETs) incorporating single nanoplates/nanowires of organic perovskite and perform scanning photocurrent microscopic (SPCM) measurements to extract carrier diffusion lengths as a function of gate voltage, source-drain bias. Spatially resolved optoelectronic investigations of single crystalline perovskite nanostructures provide valuable information and key evidence on distinguishing the dominating charge transport/separation mechanism.

  10. Quantum Transport and Optoelectronics in Gapped Graphene Nanodevices (United States)


    Performance 3. DATES COVERED (From - To) 01 Aug 2011 to 31 Jul 2016 4. TITLE AND SUBTITLE QUANTUM TRANSPORT AND OPTOELECTRONICS IN GAPPED GRAPHENE...nanodevices. To achieve this we will combine optoelectronic and plasmonic device structures with atomically seamless electrical contacts. The devices based on fully band gap engineered bilayer graphene and graphene nanoribbons, resulting in all-carbon nanoelectronic devices with optoelectronic

  11. Organic non-linear optics and opto-electronics (United States)

    Maldonado, J. L.; Ramos-Ortíz, G.; Rodríguez, M.; Meneses-Nava, M. A.; Barbosa-García, O.; Santillán, R.; Farfán, N.


    π-conjugated organic molecules and polymers are of great importance in physics, chemistry, material science and engineering. It is expected that, in the near future, organic materials will find widespread use in many technological applications. In the case of organic opto-electronic systems, the list of devices includes light emitting diodes (OLEDs), photovoltaic cells (OPVs), field-effect transistors (OFET), photorefractive materials for light manipulation, among others. These materials are also used for photonic applications: all-optical switching, modulators, optical correlators, plastic waveguides, all polymeric integrated circuits, solid-state lasers, and for biophotonic applications as in the case of the development of organic labels for multiphoton microscopy and photodynamic therapy. The advances in the developing of organic compounds with better mechanical, electrical, and optical (linear and non-linear) characteristics are of a great importance for this field. Here, we present the research on this area carried out at the Centro de Investigaciones en Óp-tica (CIO), in collaboration with Chemistry Departments of different institutions. This work focuses on the optical characterization of materials through several techniques such as TOF, FWM, TBC, THG Maker Fringes, HRS, Z-scan, and TPEF. Additionally, some applications, such as dynamic holography by using photorefractive polymers, and OPVs cells will be discussed.

  12. Focused Ion Beam Technology for Optoelectronic Devices (United States)

    Reithmaier, J. P.; Bach, L.; Forchel, A.


    High-resolution proximity free lithography was developed using InP as anorganic resist for ion beam exposure. InP is very sensitive on ion beam irradiation and show a highly nonlinear dose dependence with a contrast function comparable to organic electron beam resists. In combination with implantation induced quantum well intermixing this new lithographic technique based on focused ion beams is used to realize high performance nano patterned optoelectronic devices like complex coupled distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers.

  13. Organic ferroelectric opto-electronic memories

    Directory of Open Access Journals (Sweden)

    Kamal Asadi


    Full Text Available Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this area with a focus on the most promising opto-electronic device concept, i.e., bistable rectifying diodes. The integration of these diodes into larger memory arrays is discussed. Through a clever design of the electrodes we demonstrate light emitting diodes with integrated built-in switches that can be applied in signage applications.

  14. System of Optoelectronic Sensors for Breath Analysis

    Directory of Open Access Journals (Sweden)

    Mikołajczyk Janusz


    Full Text Available The paper describes an integrated laser absorption system as a potential tool for breath analysis for clinical diagnostics, online therapy monitoring and metabolic disorder control. The sensors operate basing on cavity enhanced spectroscopy and multi-pass spectroscopy supported by wavelength modulation spectroscopy. The aspects concerning selection of operational spectral range and minimization of interference are also discussed. Tests results of the constructed devices collected with reference samples of biomarkers are also presented. The obtained data provide an opportunity to analyse applicability of optoelectronic sensors in medical screening.

  15. Monolithically integrated optoelectronic down-converter (MIOD) (United States)

    Portnoi, Efrim L.; Venus, G. B.; Khazan, A. A.; Gorfinkel, Vera B.; Kompa, Guenter; Avrutin, Evgenii A.; Thayne, Iain G.; Barrow, David A.; Marsh, John H.


    Optoelectronic down-conversion of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the concept of down conversion in a laser diode is presented.

  16. Coherent optoelectronics with single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zrenner, A; Ester, P; Michaelis de Vasconcellos, S; Huebner, M C; Lackmann, L; Stufler, S [Universitaet Paderborn, Department Physik, Warburger Strasse 100, D-33098 Paderborn (Germany); Bichler, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)], E-mail:


    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  17. Coherent optoelectronics with single quantum dots (United States)

    Zrenner, A.; Ester, P.; Michaelis de Vasconcellos, S.; Hübner, M. C.; Lackmann, L.; Stufler, S.; Bichler, M.


    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  18. Hole transporting material 5, 10, 15-tribenzyl-5H-diindolo[3, 2-a:3′, 2′-c]-carbazole for efficient optoelectronic applications as an active layer

    Institute of Scientific and Technical Information of China (English)

    郑燕琼; William J.Potscavage Jr; 张建华; 魏斌; 黄荣娟


    In order to explore the novel application of the transparent hole-transporting material 5,10,15-tribenzyl-5H-diindolo[3,2-a:3′,2′-c]-carbazole (TBDI), in this article TBDI is used as an active layer but not a buffer layer in a pho-todetector (PD), organic light-emitting diode (OLED), and organic photovoltaic cell (OPV) for the first time. Firstly, the absorption and emission spectra of a blend layer comprised of TBDI and electron-transporting material bis-(2-methyl-8-quinolinate) 4-phenylphenolate (BAlq) are investigated. Based on the absorption properties, an organic PD with a peak absorption at 320 nm is fabricated, and a relatively-high detectivity of 2.44×1011 cm·Hz1/2/W under 320-nm illumination is obtained. The TBDI/tris (8-hydroxyquinoline) aluminum (Alq3) OLED device exhibits a comparable external quantum efficiency and current efficiency to a traditional 4, 4-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (α-NPD)/Alq3 OLED. A C70-based Schottky junction with 5 wt%-TBDI yields a power conversion efficiency of 5.0%, which is much higher than 1.7%for anα-NPD-based junction in the same configuration. These results suggest that TBDI has some promising properties which are in favor of the hole-transporting in Schottky junctions with low-concentration donor.

  19. MOF-based electronic and opto-electronic devices. (United States)

    Stavila, V; Talin, A A; Allendorf, M D


    Metal-organic frameworks (MOFs) are a class of hybrid materials with unique optical and electronic properties arising from rational self-assembly of the organic linkers and metal ions/clusters, yielding myriads of possible structural motifs. The combination of order and chemical tunability, coupled with good environmental stability of MOFs, are prompting many research groups to explore the possibility of incorporating these materials as active components in devices such as solar cells, photodetectors, radiation detectors, and chemical sensors. Although this field is only in its incipiency, many new fundamental insights relevant to integrating MOFs with such devices have already been gained. In this review, we focus our attention on the basic requirements and structural elements needed to fabricate MOF-based devices and summarize the current state of MOF research in the area of electronic, opto-electronic and sensor devices. We summarize various approaches to designing active MOFs, creation of hybrid material systems combining MOFs with other materials, and assembly and integration of MOFs with device hardware. Critical directions of future research are identified, with emphasis on achieving the desired MOF functionality in a device and establishing the structure-property relationships to identify and rationalize the factors that impact device performance.

  20. Laser processing of components for polymer mircofluidic and optoelectronic products (United States)

    Gillner, Arnold; Bremus-Koebberling, Elke A.; Wehner, Martin; Russek, Ulrich A.; Berden, Thomas


    Miniaturization is one of the keywords for the production of customer oriented and highly integrated consumer products like mobile phones, portables and other products from the daily life and there are some first silicon made products like pressure sensors, acceleration sensors and micro fluidic components, which are built in automobiles, washing machines and medical products. However, not all applications can be covered with this material, because of the limitations in lateral and 3-dimensional structuring, the mechanical behavior, the functionality and the costs of silicon. Therefore other materials, like polymers have been selected as suitable candidates for cost effective mass products. This holds especially for medical and optical applications, where the properties of selected polymers, like biocompatibility, inert chemical behavior and high transparency can be used. For this material laser micro processing offers appropriate solutions for structuring as well as for packaging with high flexibility, material variety, structure size, processing speed and easy integration into existing fabrication plants. The paper presents recent results and industrial applications of laser micro processing for polymer micro fluidic devices, like micro analysis systems, micro reactors and medical micro implants, where excimer radiation is used for lateral structuring and diode lasers have used for joining and packaging. Similar technologies have been applied to polymer waveguides to produce passive optoelectronic components for high speed interconnection with surface roughness less than 20 nm and low attenuation. The paper also reviews the technical and economical limitations and the potential of the technology for other micro products.

  1. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector (United States)

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh


    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal-semiconductor-metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW-1 and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 1010 cm Hz1/2 W-1 at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum.

  2. Colloidal quantum dots as optoelectronic elements (United States)

    Vasudev, Milana; Yamanaka, Takayuki; Sun, Ke; Li, Yang; Yang, Jianyong; Ramadurai, Dinakar; Stroscio, Michael A.; Dutta, Mitra


    Novel optoelectronic systems based on ensembles of semiconductor nanocrystals are addressed in this paper. Colloidal semiconductor quantum dots and related quantum-wire structures have been characterized optically; these optical measurements include those made on self-assembled monolayers of DNA molecules terminated on one end with a common substrate and on the other end with TiO II quantum dots. The electronic properties of these structures are modeled and compared with experiment. The characterization and application of ensembles of colloidal quantum dots with molecular interconnects are considered. The chemically-directed assembly of ensembles of colloidal quantum dots with biomolecular interconnects is demonstrated with quantum dot densities in excess of 10 +17 cm -3. A number of novel photodetectors have been designed based on the combined use of double-barrier quantum-well injectors, colloidal quantum dots, and conductive polymers. Optoelectronic devices including photodetectors and solar cells based on threedimensional ensembles of quantum dots are considered along with underlying phenomena such as miniband formation and the robustness of minibands to displacements of quantum dots in the ensemble.

  3. Pole movement in electronic and optoelectronic oscillators (United States)

    Chatterjee, S.; Pal, S.; Biswas, B. N.


    An RLC circuit with poles on the left half of the complex frequency plane is capable of executing transient oscillations. During this period, energy conversion from potential to kinetic and from kinetic to potential continuously goes on, until the stored energy is lost in dissipation through the resistance. On the other hand, in an electronic or opto-electronic oscillator with an embedded RLC circuit, the poles are forcibly placed on the right-half plane (RHP) and as far as practicable away from the imaginary axis in order to help the growth of oscillation as quickly as possible. And ultimately, it is imagined that, like the case of an ideal linear harmonic oscillator, the poles are frozen on the imaginary axis so that the oscillation neither grows nor decays. The authors feel that this act of holding the poles right on the imaginary axis is a theoretical conjecture in a soft or hard self-excited oscillator. In this article, a detailed discussion on pole movement in an electronic and opto-electronic oscillator is carried out from the basic concept. A new analytical method for estimating the time-dependent part of the pole is introduced here.

  4. Reconfigurable Optical Interconnections Using Dynamic Optoelectronic Holograms (United States)

    Schulze, Elmar


    Increasing complexity and processing speed of electronic circuits and a high device density have led to serious problems in electrical interconnections. Their limitations arise from their signal transmission capacity. power consumption. crosstalk. and reliability. Optical links may solve such problems by offering high data rates of several gigabits per second. large fanouts of up to 100 loads. good reliability and less power expenditure. Optical fibers, integrated optical waveguides or free-space transmission links may be applicable. For the free-space links, lenses. mirrors and holograms can be used to guide the light waves. In this paper, reconfigurable optical interconnection schemes are proposed and described which are based on optoelectronic holograms. Their interference patterns can be changed dynamically. To establish connections as free-space links, the light beams emitted from even hundreds of light sources are imaged onto an array of small dynamic holograms. Their interference patterns are optically and electronically controllable. These holograms diffract and focus each of the incident light beams individually onto the receiving photo-diodes. By changing the hologram interference patterns dynamically. an optical switch is obtained. It renders the establishment of reconfigurable optical interconnections. As optoelectronic holograms very-high-resolution spatial light modulators are proposed.

  5. Optoelectronic pH Meter: Further Details (United States)

    Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.


    A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

  6. DFT study of optoelectronic and magnetic properties of iron-containing diamond-like materials Ag2FeSiS4, Li2FeSnS4, and Li2FeGeS4 (United States)

    Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya


    Ag2FeSiS4, Li2FeSnS4, and Li2FeGeS4 have been studied by first-principles calculations within density functional theory (DFT) added to the Coulomb energy (U Hubbard term) to treat the strong correlation of Fe 3d electrons. All three materials have shown that their conduction band minimum (CBM) and valence band maximum (VBM) were situated at Γ point, indicating a direct band gap of 1.99 and 2.26 eV, 2.24 eV for Ag2FeSiS4, Li2FeSnS4, and Li2FeGeS4 respectively. The lower part of the valence band was dominated by S-s orbitals while the mid part were contributed mostly by Sn/Ge-s and Ag-d states. Hence, the VBM and CBM were mainly due to Fe-d states. The bonding characterization have shown a strong covalent bonding between the Fe-S, Ge-S, Sn-S, Ag-S and Si-S atoms. The imaginary part of the dielectric constant have revealed that the first optical critical point energy occurred at 1.2 eV for Ag2FeSiS4, and at 2.0 eV for Li2FeSnS4, and Li2FeGeS4 compounds leading them to absorb less of visible spectrum. The existence of iron in the composition of these compounds have induced magnetic properties that we explored by the calculation of the magnetic moment and spin-densities maps.

  7. Optoelectronic sensors for subsea oil and gas production (United States)

    McStay, D.; Shiach, G.; Nolan, A.; McAvoy, S.


    The potential for optoelectronic sensor technology to provide the monitoring and control systems required for advanced subsea hydrocarbon production management is described. The utilisation of optoelectronic sensor technology to produce a new class of subsea Christmas Tree with in-built enhanced production monitoring and control systems as well as effective environmental monitoring systems is reported.

  8. Functionalization of Semiconductor Nanomaterials for Optoelectronic Devices And Components (United States)


    alternative for single quarter wavelength coating. Previous investigations on Ta2O5 include corrosion protection coating, electrochromic devices ...Functionalization of semiconductor nanomaterials for optoelectronic devices and components 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-10-1-0136 5c. PROGRAM...Distribution A 13. SUPPLEMENTARY NOTES None 14. ABSTRACT Various semiconductor nanomaterials were functionalized for optoelectronic devices , such

  9. A doping-free approach to carbon nanotube electronics and optoelectronics

    Directory of Open Access Journals (Sweden)

    Lian-Mao Peng


    Full Text Available The electronic properties of conventional semiconductor are usually controlled by doping, which introduces carriers into the semiconductor but also distortion and scattering centers to the otherwise perfect lattice, leading to increased scattering and power consumption that becomes the limiting factors for the ultimate performance of the next generation electronic devices. Among new materials that have been considered as potential replacing channel materials for silicon, carbon nanotubes (CNTs have been extensively studied and shown to have all the remarkable electronic properties that an ideal electronic material should have, but controlled doping in CNTs has been proved to be challenging. In this article we will review a doping-free approach for constructing nanoelectronic and optoelectronic devices and integrated circuits. This technique relies on a unique property of CNTs, i.e. high quality ohmic contacts can be made to both the conduction band and valence band of a semiconducting CNT. High performance nanoelectronic and optoelectronic devices have been fabricated using CNTs with this method and performance approach to that of quantum limit. In principle high performance electronic devices and optoelectronic devices can be integrated on the same carbon nanotube with the same footing, and this opens new possibilities for electronics beyond the Moore law in the future.

  10. Introduction to the new journal: Frontiers of Optoelectronics in China

    Institute of Scientific and Technical Information of China (English)

    Bingkun ZHOU


    @@ China, together with the world, has made enormous achievements in the field of optoelectronics in recent years and is still now undergoing the processes of rapid advancement.Chinese Researchers have devoted themselves to finding out ways to solve the problems in optoelectronics, and have made substantial progress theoretically and experimentally.Thus, a platform is needed on which researchers could share their new findings and technological advances in the field of optoelectronics and related disciplines with colleagues around the world.The new launched journal, Frontiers of Optoelectronics in China, aims to serve such a platform that provides a way for scientists all over the world to share the ideas and technologies in the field of optoelectronics.

  11. Subsecond annealing of advanced materials annealing by lasers, flash lamps and swift heavy ions

    CERN Document Server

    Skorupa, Wolfgang


    This book examines thermal processing of elemental semiconductors and materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Covers compound semiconductors, dielectric composites and organic materials.

  12. Implantable optoelectronic probes for in vivo optogenetics (United States)

    Iseri, Ege; Kuzum, Duygu


    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  13. Optoelectronic date acquisition system based on FPGA (United States)

    Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing


    An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

  14. Optoelectronic properties of natural cyanin dyes. (United States)

    Calzolari, A; Varsano, D; Ruini, A; Catellani, A; Tel-Vered, R; Yildiz, H B; Ovits, O; Willner, I


    An integrated theoretical/experimental study of the natural cyanin dye is presented in terms of its structural and optoelectronic properties for different gas-phase and prototypical device configurations. Our microscopic analysis reveals the impact of hydration and hydroxylation reactions, as well as of the attached sugar, on ground and optically excited states, and it illustrates the visible-light harvesting capability of the dye. Our optical experiments at different and controlled pH concentrations allow for a direct comparison with theoretical results. We analyze the many different contributions to photocurrent of the various portions of a prototypical device and, as a proof of principle, we propose the addition of specific ligands to control the increase of the photocurrent yield in the cyanin-based electrochemical device.

  15. Nanoscale selective area epitaxy for optoelectronic devices (United States)

    Elarde, V. C.; Coleman, J. J.

    Self-assembled quantum dots have been heavily researched in recent years because of the potential applications to quantum electronic and optoelectronic devices they present. The non-uniformity and random ordering resulting from the self-assembly processes, however, are detrimental to potential applications, prohibiting the type of engineering control necessary for complex systems. The work presented in this document has sought to overcome the limitations of self-assembly by combining selective area epitaxy via MOCVD with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is patterned quantum dots which improve on the uniformity and order of similar self-assembled quantum dots. The second is an entirely novel structure, the nanopore active layer, which demonstrates the potential for this process to extend beyond the constraints of self-assembly. Experimental and theoretical results for both structures are presented.

  16. Seeing smells: development of an optoelectronic nose

    Directory of Open Access Journals (Sweden)

    Kenneth S. Suslick


    Full Text Available The development of an array of chemically-responsive dyes on a porous membrane and in its use as a general sensor for odors and volatile organic compounds (VOCs is reviewed. These colorimetric sensor arrays (CSA act as an "optoelectronic nose" by using an array of multiple dyes whose color changes are based on the full range of intermolecular interactions. The CSA is digitally imaged before and after exposure and the resulting difference map provides a digital fingerprint for any VOC or mixture of odorants. The result is an enormous increase in discriminatory power among odorants compared to prior electronic nose technologies. For the detection of biologically important analytes, including amines, carboxylic acids, and thiols, high sensitivities (ppbv have been demonstrated. The array is essentially non-responsive to changes in humidity due to the hydrophobicity of the dyes and membrane.

  17. Electrodes for Microfluidic Integrated Optoelectronic Tweezers

    Directory of Open Access Journals (Sweden)

    Kuo-Wei Huang


    Full Text Available We report on two types of electrodes that enable the integration of optoelectronic tweezers (OETs with multilayer poly(dimethylsilane- (PDMS- based microfluidic devices. Both types of electrodes, Au-mesh and single-walled carbon nanotube- (SWNT- embedded PDMS thin film, are optically transparent, electrically conductive, and can be mechanically deformed and provide interfaces to form strong covalent bonding between an OET device and PDMS through standard oxygen plasma treatment. Au-mesh electrodes provide high electrical conductivity and high transparency but are lack of flexibility and allow only small deformation. On the other hand, SWNT-embedded PDMS thin film electrodes provide not only electrical conductivity but also optical transparency and can undergo large mechanical deformation repeatedly without failure. This enables, for the first time, microfluidic integrated OET with on-chip valve and pump functions, which is a critical step for OET-based platforms to conduct more complex and multistep biological and biochemical analyses.

  18. Optoelectronic circuits in nanometer CMOS technology

    CERN Document Server

    Atef, Mohamed


    This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

  19. Integrated NEMS and optoelectronics for sensor applications.

    Energy Technology Data Exchange (ETDEWEB)

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R. (Symphony Acoustics, Rio Rancho, NM); Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade (Symphony Acoustics, Rio Rancho, NM); Okandan, Murat; Peterson, Kenneth Allen


    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  20. Modeling and optoelectronic realization of an artificial cortex (United States)

    Pashaie, Ramin

    codes and cortical topological computational maps. Next step in this research is seeking suitable enabling technologies, such as electronics and optics, for hardware implementation of these cortical models. It is a general consensus that realization of parallelism and massive interconnections can be done far better in optics compared to electronics. Nevertheless, one can exploit optoelectronic methodologies that combine the benefits of optics with flexibilities of electronics. An innovative optoelectronic approach is taking advantage of the optical mechanism of a special type of stimulable storage phosphor, the so called electron trapping materials. Our analytical modelings and experimental works reveal that the equilibrium state luminescence of this material can be controlled to generate a variety of different nonlinear behaviors including quasi-quadratic responses that can be used for generation of quadratic return maps. Combining this versatility with the state-of-the-art high speed spatial light modulators and CCD cameras, large arrays of quadratic return maps can be accommodated in a thin film of electron trapping material. Another approach which is investigated in this dissertation is based on using the recently developed digital microelectromechanic spatial light modulators. These modulators can control the exposure precisely. We show that a closed loop of such a spatial light modulator and a CCD camera can be used to build an optoelectronic machine suitable for parallel recursive computations similar to our cortical models.

  1. Laser Recrystallized Silicon/plzt Smart Spatial Light Modulators for Optoelectronic Computing (United States)

    Ersen, Ali

    By integrating materials for electronic processing with light modulating materials, the computational power of electronics can be combined with the communication power of optics. These light modulating devices integrated with silicon (Smart Spatial Light Modulators or S-SLMs) form a key component of highly parallel fine grain optoelectronic computers. Spatial light modulators developed using the combination of silicon with PLZT (a ferroelectric light modulating ceramic) meet the system requirements for optoelectronic computing. PLZT can be integrated with silicon by depositing a thin layer of polysilicon on the top. However, the quality of polysilicon does not allow the fabrication of circuits of high complexity. It is possible to enlarge polysilicon grain size by melting and solidifying it in a controlled manner. A dual beam laser recrystallization technique has been developed for this purpose. This thesis involves the development and the application of this technique to fabrication of S-SLMs. The goal is to increase the number of transistors in an S-SLM while keeping the array yield of such devices above acceptable levels for optoelectronic computer systems. For this purpose, a NMOS process in laser recrystallized silicon on PLZT has been developed. Arrays with up to 12 transistor unit cell complexity have been fabricated using this technology.

  2. Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications. (United States)

    Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song


    Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

  3. Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications. (United States)

    Zhao, Yixin; Zhu, Kai


    Organic and inorganic hybrid perovskites (e.g., CH(3)NH(3)PbI(3)), with advantages of facile processing, tunable bandgaps, and superior charge-transfer properties, have emerged as a new class of revolutionary optoelectronic semiconductors promising for various applications. Perovskite solar cells constructed with a variety of configurations have demonstrated unprecedented progress in efficiency, reaching about 20% from multiple groups after only several years of active research. A key to this success is the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of hybrid perovskites. The rapid progress in material synthesis and device fabrication has also promoted the development of other optoelectronic applications including light-emitting diodes, photodetectors, and transistors. Both experimental and theoretical investigations on organic-inorganic hybrid perovskites have enabled some critical fundamental understandings of this material system. Recent studies have also demonstrated progress in addressing the potential stability issue, which has been identified as a main challenge for future research on halide perovskites. Here, we review recent progress on hybrid perovskites including basic chemical and crystal structures, chemical synthesis of bulk/nanocrystals and thin films with their chemical and physical properties, device configurations, operation principles for various optoelectronic applications (with a focus on solar cells), and photophysics of charge-carrier dynamics. We also discuss the importance of further understanding of the fundamental properties of hybrid perovskites, especially those related to chemical and structural stabilities.

  4. Molecular doping of single-walled carbon nanotube transistors: optoelectronic study (United States)

    Zhang, Jiangbin; Emelianov, Aleksei V.; Bakulin, Artem A.; Bobrinetskiy, Ivan I.


    Single-walled carbon nanotubes (SWCNT) are a promising material for future optoelectronic applications, including flexible electrodes and field-effect transistors. Molecular doping of carbon nanotube surface can be an effective way to control the electronic structure and charge dynamics of these material systems. Herein, two organic semiconductors with different energy level alignment in respect to SWCNT are used to dope the channel of the SWCNT-based transistor. The effects of doping on the device performance are studied with a set of optoelectronic measurements. For the studied system, we observed an opposite change in photo-resistance, depending on the type (electron donor vs electron acceptor) of the dopants. We attribute this effect to interplay between two effects: (i) the change in the carrier concentration and (ii) the formation of trapping states at the SWCNT surface. We also observed a modest 4 pA photocurrent generation in the doped systems, which indicates that the studied system could be used as a platform for multi-pulse optoelectronic experiments with photocurrent detection.

  5. Research progress of low-dimensional perovskites: synthesis, properties and optoelectronic applications (United States)

    Min, Xinzhe; Pengchen, Zhu; Gu, Shuai; Jia, Zhu


    The lead halide-based perovskites, for instance, CH3NH3PbX3 and CsPbX3 (X = Cl, Br, I), have received a lot of attention. Compared with bulk materials, low-dimensional perovskites have demonstrated a range of unique optical, electrical and mechanical properties, which enable wide applications in solar cells, lasers and other optoelectronic devices. In this paper, we provide a summary of the research progress of the low-dimensional perovskites in recent years, from synthesis methods, basic properties to their optoelectronic applications. Project jointly supported by the State Key Program for Basic Research of China (No. 2015CB659300), the National Natural Science Foundation of China (Nos. 11321063, 11574143), the Natural Science Foundation of Jiangsu Province (Nos. BK20150056, BK20151079), the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), and the Fundamental Research Funds for the Central Universities.

  6. Tailored single-walled carbon nanotube--CdS nanoparticle hybrids for tunable optoelectronic devices. (United States)

    Li, Xianglong; Jia, Yi; Cao, Anyuan


    The integration of organic and inorganic building blocks into novel nanohybrids is an important tool to exploit innovative materials with desirable functionalities. For this purpose, carbon nanotube--nanoparticle nanoarchitectures are intensively studied. We report here an efficient noncovalent chemical route to density-controllably and uniformly assemble single-walled carbon nanotubes with CdS nanoparticles. The methodology not only promises the resulting hybrids will be solution-processable but also endows the hybrids with distinct optoelectronic properties including tunable photoresponse mediated by amine molecules. On the basis of these merits, reliable thin-film photoswitches and light-driven chemical sensors are demonstrated, which highlights the potential of tailored hybrids in the development of new tunable optoelectronic devices and sensors.

  7. Fabrication of one-dimensional organic nanomaterials and their optoelectronic applications. (United States)

    Yu, Hojeong; Kim, Dong Yeong; Lee, Kyung Jin; Oh, Joon Hak


    This paper reviews the recent research and development of one-dimensional (1D) organic nanomaterials synthesized from organic semiconductors or conducting polymers and their applications to optoelectronics. We introduce synthetic methodologies for the fabrication of 1D single-crystalline organic nanomaterials and 1D multi-component organic nanostructures, and discuss their optical and electrical properties. In addition, their versatile applications in optoelectronics are highlighted. The fabrication of highly crystalline organic nanomaterials combined with their integration into nanoelectronic devices is recognized as one of the most promising strategies to enhance charge transport properties and achieve device miniaturization. In the last part of this review, we discuss the challenges and the perspectives of organic nanomaterials for applications in the next generation soft electronics, in terms of fabrication, processing, device integration, and investigation on the fundamental mechanisms governing the charge transport behaviors of these advanced materials.

  8. Design of Optical Metamaterial Mirror with Metallic Nanoparticles for Broadband Light Absorption in Graphene Optoelectronic Devices

    CERN Document Server

    Lee, Seungwoo


    A general metallic mirror (i.e., a flat metallic surface) has been a popular optical component that can contribute broadband light absorption to thin-film optoelectronic devices; nonetheless, such electric mirror with a reversal of reflection phase inevitably causes the problem of minimized electric field near at the mirror surface (maximized electric field at one quarter of wavelength from mirror). This problem becomes more elucidated, when the deep-subwavelength-scaled two-dimensional (2D) material (e.g., graphene and molybdenum disulfide) is implemented into optoelectronic device as an active channel layer. The purpose of this work was to conceive the idea for using a charge storage layer (spherical Au nanoparticles (AuNPs), embedded into dielectric matrix) of the floating-gate graphene photodetector as a magnetic mirror, which allows the device to harness the increase in broadband light absorption. In particular, we systematically examined whether the versatile assembly of spherical AuNP monolayer within ...

  9. Effect of annealing over optoelectronic properties of graphene based transparent electrodes (United States)

    Yadav, Shriniwas; Kaur, Inderpreet


    Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  10. Optoelectronic Picosecond Detection of Synchrotron X-rays

    Energy Technology Data Exchange (ETDEWEB)

    Durbin, Stephen M. [Purdue Univ., West Lafayette, IN (United States)


    The goal of this research program was to develop a detector that would measure x-ray time profiles with picosecond resolution. This was specifically aimed for use at x-ray synchrotrons, where x-ray pulse profiles have Gaussian time spreads of 50-100 ps (FWHM), so the successful development of such a detector with picosecond resolution would permit x-ray synchrotron studies to break through the pulse width barrier. That is, synchrotron time-resolved studies are currently limited to pump-probe studies that cannot reveal dynamics faster than ~50 ps, whereas the proposed detector would push this into the physically important 1 ps domain. The results of this research effort, described in detail below, are twofold: 1) the original plan to rely on converting electronic signals from a semiconductor sensor into an optical signal proved to be insufficient for generating signals with the necessary time resolution and sensitivity to be widely applicable; and 2) an all-optical method was discovered whereby the x-rays are directly absorbed in an optoelectronic material, lithium tantalate, which can then be probed by laser pulses with the desired picosecond sensitivity for detection of synchrotron x-rays. This research program has also produced new fundamental understanding of the interaction of x-rays and optical lasers in materials that has now created a viable path for true picosecond detection of synchrotron x-rays.

  11. Narrow band gap conjugated polymers for emergent optoelectronic technologies (United States)

    Azoulay, Jason D.; Zhang, Benjamin A.; London, Alexander E.


    Conjugated organic molecules effectively produce and harvest visible light and find utility in a variety of emergent optoelectronic technologies. There is currently interest in expanding the scope of these materials to extend functionality into the infrared (IR) spectral regions and endow functionality relevant in emergent technologies. Developing an understanding of the interplay between chemical and electronic structure in these systems will require control of the frontier orbital energetics (separation, position, and alignment), ground state electronic configurations, interchain arrangements, solid-state properties, and many other molecular features with synthetic precision that has yet to be demonstrated. Bridgehead imine substituted 4H-cyclopenta[2,1-b:3,4-b']dithiophene (CPDT) structural units, in combination with strong acceptors with progressively delocalized π-systems, afford modular donor-acceptor copolymers with broad and long wavelength absorption that spans technologically relevant wavelength (λ) ranges from 0.7 < λ < 3.2 μm.1 Here we demonstrate that electronic and structural manipulation play a major role in influencing the energetics of these systems and ultimately controlling the band gap of the materials. These results bear implication in the development of very narrow band gap systems where precise control will be necessary for achieving desired properties such as interactions with longer wavelength light.

  12. Zinc Oxide — A Material for Micro- and Optoelectronic Applications

    CERN Document Server

    Nickel, Norbert H


    This volume reviews the latest experimental and theoretical studies in the field of ZnO. The chapters reflect the topics that were discussed during the NATO Advanced Research Workshop, which brought together researchers from Nato countries, Russia, Ukraine, and Kazakhstan to encourage cross fertilization and wider dissemination of the advances in this important research field. Fundamental issues such as growth of ZnO, structural, optical and electric properties, the role of the hydrogen and more were discussed.

  13. Mid-Infrared Optoelectronics: Materials and Devices. MIOMD-XII (United States)


    University, 6100 Main Street, Houston, TX 77005‐1827, USA 3Dipartimento Interateneo di Fisica , Università e Politecnico di Bari Via Amendola 173, I‐70126, Bari...Lancaster University, Lancaster, LA1 4YB, UK 2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK 3Dipartimento di Fisica

  14. Research on Crystal and Film Ferroelectric Materials for Optoelectronic Applications. (United States)


    2 P2 2 P6 + a13 3(P + P 3)P3 + a123rlr2r3 + a 3 3 3 P3 + 1( 1 P2 +c1122P1P2 4 444+ 01 13 1 + P 2 )p + 112 P31 1133( 13333 where the a,’s have been...ratio for C3:C3f is predicted in the low-temperature limit (P 3 large), compared to the - 9:1 ratio measured. Adiabatic vs iso - thermal considerations can...calculated from Eq. (21) using the value of 13333 given above. r 71 C91 I7A/jbs 0 % Rockwell International Science Center SC5345.AR 600 SONI 60 500

  15. An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices (United States)

    De Sanctis, Adolfo; Jones, Gareth F.; Townsend, Nicola J.; Craciun, Monica F.; Russo, Saverio


    Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), are the focus of wide research interest. They can be the key to improving bandwidths in telecommunications, capacity in data storage, and new features in consumer electronics, safety devices, and medical equipment. The characterization of these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Furthermore, proof-of-concept devices are usually fabricated from micro-meter size flakes, requiring microscopy techniques to characterize them. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through atmospheric contamination. Here, we present an integrated, multi-purpose instrument dedicated to the optical and electrical characterization of devices based on 2D materials which is able to perform low frequency electrical measurements, scanning photocurrent mapping, and Raman, absorption, and PL spectroscopy in one single setup with full control over the polarization and wavelength of light. We characterize this apparatus by performing multiple measurements on graphene, transition metal dichalcogenides (TMDs), and Si. The performance and resolution of each individual measurement technique is found to be equivalent to that of commercially available instruments. Contrary to nowadays' commercial systems, a significant advantage of the developed instrument is that for the first time the integration of a wide

  16. Integral optoelectronic switch based on DMOS-transistors

    Directory of Open Access Journals (Sweden)

    Politanskyy L. F.


    Full Text Available The characteristics of optoelectronic couples photodiodes-DMOS-transistor are studied in the paper. There was developed a mathematical model of volt-ampere characteristic of the given optoelectronic couple which allows to determine interrelation of its electric parameters with constructive and electrophysical parameters of photodiodes and DMOS-transistors. There was suggested a construction of integral optoelectronic switch, based on DMOS-transistors on the silicon with dielectric insulation structures (SDIS. Possible is the optic control of executive devices, connected both to the source and drain circuits of the switching transistor.

  17. Magnetometer Based on Optoelectronic Microwave Oscillator (United States)

    Maleki, Lute; Strekalov, Dmitry; Matsko, Andrey


    proposed instrument, intended mainly for use as a magnetometer, would include an optoelectronic oscillator (OEO) stabilized by an atomic cell that could play the role of a magnetically tunable microwave filter. The microwave frequency would vary with the magnetic field in the cell, thereby providing an indication of the magnetic field. The proposed magnetometer would offer a combination of high accuracy and high sensitivity, characterized by flux densities of less than a picotesla. In comparison with prior magnetometers, the proposed magnetometer could, in principle, be constructed as a compact, lightweight instrument: It could fit into a package of about 10 by 10 by 10 cm and would have a mass <0.5 kg. As described in several prior NASA Tech Briefs articles, an OEO is a hybrid of photonic and electronic components that generates highly spectrally pure microwave radiation, and optical radiation modulated by the microwave radiation, through direct conversion between laser light and microwave radiation in an optoelectronic feedback loop. As used here, "atomic cell" signifies a cell containing a vapor, the constituent atoms of which can be made to undergo transitions between quantum states, denoted hyperfine levels, when excited by light in a suitable wavelength range. The laser light must be in this range. The energy difference between the hyperfine levels defines the microwave frequency. In the proposed instrument (see figure), light from a laser would be introduced into an electro-optical modulator (EOM). Amplitude-modulated light from the exit port of the EOM would pass through a fiber-optic splitter having two output branches. The light in one branch would be sent through an atomic cell to a photodiode. The light in the other branch would constitute the microwave-modulated optical output. Part of the light leaving the atomic cell could also be used to stabilize the laser at a frequency in the vicinity of the desired hyperfine or other quantum transition. The

  18. Carbon dots—Emerging light emitters for bioimaging, cancer therapy and optoelectronics

    KAUST Repository

    Hola, Katerina


    © 2014 Elsevier Ltd. All rights reserved. Carbon dots represent an emerging class of fluorescent materials and provide a broad application potential in various fields of biomedicine and optoelectronics. In this review, we introduce various synthetic strategies and basic photoluminescence properties of carbon dots, and then address their advanced in vitro and in vivo bioapplications including cell imaging, photoacoustic imaging, photodynamic therapy and targeted drug delivery. We further consider the applicability of carbon dots as components of light emitting diodes, which include carbon dot based electroluminescence, optical down-conversion, and hybrid plasmonic devices. The review concludes with an outlook towards future developments of these emerging light-emitting materials.

  19. Optoelectronic Infrastructure for RF/Optical Phased Arrays Project (United States)

    National Aeronautics and Space Administration — Optoelectronic integrated holds the key to higher performance, reduced mass and radiation-hard space systems. A special need is increased flexibility of phased...

  20. Device-packaging method and apparatus for optoelectronic circuits

    Energy Technology Data Exchange (ETDEWEB)

    Zortman, William A.; Henry, Michael David; Jarecki, Jr., Robert L.


    An optoelectronic device package and a method for its fabrication are provided. The device package includes a lid die and an active die that is sealed or sealable to the lid die and in which one or more optical waveguides are integrally defined. The active die includes one or more active device regions, i.e. integral optoelectronic devices or etched cavities for placement of discrete optoelectronic devices. Optical waveguides terminate at active device regions so that they can be coupled to them. Slots are defined in peripheral parts of the active dies. At least some of the slots are aligned with the ends of integral optical waveguides so that optical fibers or optoelectronic devices inserted in the slots can optically couple to the waveguides.

  1. Optoelectronic Infrastructure for RF/Optical Phased Arrays Project (United States)

    National Aeronautics and Space Administration — Optoelectronic integrated circuits offer radiation-hard solutions for satellite systems with much improved SWPB (size, weight, power and bandwidth). The phased array...

  2. I–II–V and I–III–IV half-Heusler compounds for optoelectronic applications: Comparative ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Kacimi, S.; Mehnane, H.; Zaoui, A., E-mail:


    Highlights: • TB-mBJ calculations were performed on 96 half-Heusler materials. • Several criteria were used to select candidates for optoelectronic applications. • Only six compounds fulfill these criteria. -- Abstract: We have investigated structural, electronic and optical properties of 96 half-Heusler materials, including compounds of I–II–V and I–III–IV types using first-principles calculations based on the density functional theory. The calculated lattice constants and band gaps are used as basis informations to select candidate materials favorable for specific optoelectronic applications. The band gap trend in the selected XYZ materials is found to be similar to the one in the zinc-blende III–V compounds. The assignment of the structures in the optical spectra and band structure transitions are investigated in detail. The predicted values of the dielectric constants for selected half-Heusler systems are close to those of the III–V binary compounds.

  3. Optoelectronic Device Integration in Silicon (OpSIS) (United States)


    Delaware in the development of fundamental design tools and methodologies for optoelectronic devices in silicon photonics. We proposed to develop...THIS PAGE U 19b. TELEPHONE NUMBER (Include area code) 302-831-4241 Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std . Z39.18 Adobe...10-1-0439 Prime Award Institution: University of Washington Subaward Institution: University of Delaware Title: Optoelectronic Device

  4. Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Narasimhan, Vijay K.; Hymel, Thomas M.; Lai, Ruby A.; Cui, Yi


    An optoelectronic device has a hybrid metal-dielectric optoelectronic interface including an array of nanoscale dielectric resonant elements (e.g., nanopillars), and a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film. The device may also include an anti-reflection coating. The device may further include a metal film layer on each of the dielectric resonant elements.

  5. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets (United States)

    Chen, Xinliang; Li, Honglai; Qi, Zhaoyang; Yang, Tiefeng; Yang, Yankun; Hu, Xuelu; Zhang, Xuehong; Zhu, Xiaoli; Zhuang, Xiujuan; Hu, Wei; Pan, Anlian


    Quasi-one-dimensional (1D) nanostructures have been extensively explored for electronic and optoelectronic devices on account of their unique morphologies and versatile physical properties. Here, we report the successful synthesis of GaInAsSb alloy nanosheets by a simple chemical vapor deposition method. The grown GaInAsSb alloy nanosheets are pure zinc-blende single crystals, which show nanosize-induced extraordinary optoelectronic properties as compared with bulk materials. μ-Raman spectra exhibit a multi-mode phonon vibration behavior with clear frequency shifts under varied laser power. Photoluminescence measurements reveal a strong light emission in the near-infrared region (1985 nm), and the obtained Varshni thermal coefficients α and β are smaller than those of the bulk counterparts due to the size confinement effect. In addition, photodetectors (PDs) based on these single-alloy nanosheets were constructed for the first time. The PDs show a strong response in the near-infrared region with the external quantum efficiency of 8.05 × 104%, and the responsivity of 0.675 × 103 A W-1. These novel nanostructures would make contributions to the study of fundamental physical phenomena in quasi-1D nanomaterial systems and can be potential building blocks for optoelectronic and quantum devices.

  6. Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires. (United States)

    Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin


    The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

  7. Hybrid optoelectronic device with multiple bistable outputs (United States)

    Costazo-Caso, Pablo A.; Jin, Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad


    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  8. Terahertz biochip based on optoelectronic devices (United States)

    Lu, Ja-Yu; Chen, Li-Jin; Kao, Tzeng-Fu; Chang, Hsu-Hao; Liu, An-Shyi; Yu, Yi-Chun; Wu, Ruey-Beei; Liu, Wei-Sheng; Chyi, Jen-Inn; Pan, Ci-Ling; Tsai, Ming-Cheng; Sun, Chi-Kuang


    The accurate detection of minute amounts of chemical and biological substances has been a major goal in bioanalytical technology throughout the twentieth century. Fluorescence dye labeling detection remains the effective analysis method, but it modifies the surroundings of molecules and lowering the precision of detection. An alternative label free detecting tool with little disturbance of target molecules is highly desired. Theoretical calculations and experiments have demonstrated that many biomolecules have intrinsic resonance due to vibration or rotation level transitions, allowing terahertz (THz)-probing technique as a potential tool for the label-free and noninvasive detection of biomolecules. In this paper, we first ever combined the THz optoelectronic technique with biochip technology to realize THz biosensing. By transferring the edge-coupled photonic transmitter into a thin glass substrate and by integrating with a polyethylene based biochip channel, near field THz detection of the biomolecules is demonstrated. By directly acquiring the absorption micro-spectrum in the THz range, different boiomecules can then be identified according to their THz fingerprints. For preliminary studies, the capability to identity different illicit drug powders is successfully demonstrated. This novel biochip sensing system has the advantages including label-free detection, high selectivity, high sensitivity, ease for sample preparation, and ease to parallel integrate with other biochip functionality modules. Our demonstrated detection capability allows specifying various illicit drug powders with weight of nano-gram, which also enables rapid identification with minute amounts of other important molecules including DNA, biochemical agents in terrorism warfare, explosives, viruses, and toxics.

  9. Assessment of dental plaque by optoelectronic methods (United States)

    Negrutiu, Meda-Lavinia; Sinescu, Cosmin; Bortun, Cristina Maria; Levai, Mihaela-Codrina; Topala, Florin Ionel; Crǎciunescu, Emanuela Lidia; Cojocariu, Andreea Codruta; Duma, Virgil Florin; Podoleanu, Adrian Gh.


    The formation of dental biofilm follows specific mechanisms of initial colonization on the surface, microcolony formation, development of organized three dimensional community structures, and detachment from the surface. The structure of the plaque biofilm might restrict the penetration of antimicrobial agents, while bacteria on a surface grow slowly and display a novel phenotype; the consequence of the latter is a reduced sensitivity to inhibitors. The aim of this study was to evaluate with different optoelectronic methods the morphological characteristics of the dental biofilm. The study was performed on samples from 25 patients aged between 18 and 35 years. The methods used in this study were Spectral Domain Optical Coherence Tomography (SD-OCT) working at 870 nm for in vivo evaluations and Scanning Electron Microscopy (SEM) for validations. For each patient a sample of dental biofilm was obtained directly from the vestibular surface of the teeth's. SD-OCT produced C- and B-scans that were used to generate three dimensional (3D) reconstructions of the sample. The results were compared with SEM evaluations. The biofilm network was dramatically destroyed after the professional dental cleaning. OCT noninvasive methods can act as a valuable tool for the 3D characterization of dental biofilms.

  10. Single carbon-nanotube photonics and optoelectronics (United States)

    Kato, Yuichiro K.


    Single-walled carbon nanotubes have unique optical properties as a result of their one-dimensional structure. Not only do they exhibit strong polarization for both absorption and emission, large exciton binding energies allow for room-temperature excitonic luminescence. Furthermore, their emission is in the telecom-wavelengths and they can be directly synthesized on silicon substrates, providing new opportunities for nanoscale photonics and optoelectronics. Here we discuss the use of individual single-walled carbon nanotubes for generation, manipulation, and detection of light on a chip. Their emission properties can be controlled by coupling to silicon photonic structures such as photonic crystal microcavities and microdisk resonators. Simultaneous photoluminescence and photocurrent measurements show that excitons can dissociate spontaneously, enabling photodetection at low bias voltages despite the large binding energies. More recently, we have found that alternating gate-voltages can generate optical pulse trains from individual nanotubes. Ultimately, these results may be combined to achieve further control over photons at the nanoscale. Work supported by KAKENHI, The Canon Foundation, The Asahi Glass Foundation, and JSPS Open Partnership Joint Projects, as well as the Nanotechnology Platform and Photon Frontier Network Program of MEXT, Japan.

  11. Toward silicon-based longwave integrated optoelectronics (LIO) (United States)

    Soref, Richard


    The vision of longwave silicon photonics articulated in the Journal of Optics A, vol. 8, pp 840-848, 2006 has now come into sharper focus. There is evidence that newly designed silicon-based optoelectronic circuits will operate at any wavelength within the wide 1.6 to 200 μm range. Approaches to that LWIR operation are reviewed here. A long-range goal is to manufacture LWIR OEIC chips in a silicon foundry by integrating photonics on-chip with CMOS, bipolar, or BiCMOS micro-electronics. A principal LWIR application now emerging is the sensing of chemical and biological agents with an OE laboratory-on-a-chip. Regarding on-chip IR sources, the hybrid evanescent-wave integration of III-V interband-cascade lasers and quantum-cascade lasers on silicon (or Ge/Si) waveguides is a promising technique, although an alternative all-group-IV solution is presently taking shape in the form of silicon-based Ge/SiGeSn band-to-band and inter-subband lasers. There is plenty of room for creativity in developing a complete suite of LWIR components. Materials modification, device innovation, and scaling of waveguide dimensions are needed to implement microphotonic, plasmonic and photonic-crystal LWIR devices, both active and passive. Such innovation will likely lead to significant LIO applications.

  12. Optoelectronic analysis of multijunction wire array solar cells (United States)

    Turner-Evans, Daniel B.; Chen, Christopher T.; Emmer, Hal; McMahon, William E.; Atwater, Harry A.


    Wire arrays have demonstrated promising photovoltaic performance as single junction solar cells and are well suited to defect mitigation in heteroepitaxy. These attributes can combine in tandem wire array solar cells, potentially leading to high efficiencies. Here, we demonstrate initial growths of GaAs on Si0.9Ge0.1 structures and investigate III-V on Si1-xGex device design with an analytical model and optoelectronic simulations. We consider Si0.1Ge0.9 wires coated with a GaAs0.9P0.1 shell in three different geometries: conformal, hemispherical, and spherical. The analytical model indicates that efficiencies approaching 34% are achievable with high quality materials. Full field electromagnetic simulations serve to elucidate the optical loss mechanisms and demonstrate light guiding into the wire core. Simulated current-voltage curves under solar illumination reveal the impact of a varying GaAs0.9P0.1 minority carrier lifetime. Finally, defective regions at the hetero-interface are shown to have a negligible effect on device performance if highly doped so as to serve as a back surface field. Overall, the growths and the model demonstrate the feasibility of the proposed geometries and can be used to guide tandem wire array solar cell designs.

  13. Charicteristic of a novel optoelectronic polymer and related device fabrication

    Institute of Scientific and Technical Information of China (English)

    SUN Jian-yuan; HE Zhi-qun; HAN Xiao; WANG Bin; WANG Yong-sheng; LlU Ying-liang; CAO Shao-kui


    In this paper a preliminary investigation of a novel optoelectronic polymer, poly (p-phenylene N-4-n-butylphenyl-N,N-bis-4-vinylenephenylamine) (PNB), is reported. A single layer structure of ITO/PNB/Al was prepared via spin-coating of PNB solution as a thin film on the top of an ITO substrate, while aluminum top electrode was vacuum evaporated. Dark currentvoltage characteristics of this device showed a typical rectifying behaviour. Photovoltaic response under a monochromatic illumination at 420 nm was observed, with an open circuit voltage of 0.3 V and fill factor of 0.21. Spectral response and optical absorption were found to be matched well. It was also discovered that the device showed a green electroluminescent emission at a forward bias. Turn-on voltage of the device was about 6 V and light output about 22.6 nW at a forward bias of 10 V. The work demonstrated that the PNB material might possess dual exciton sites resulting in a competition for excitons to be either separated or recombined. Both effects were associated with each other, which limited the photovoltaic or electroluminescence to some degrees.

  14. Bismuth Silver Oxysulfide for Photoconversion Applications: Structural and Optoelectronic Properties

    KAUST Repository

    baqais, amal


    Single-phase bismuth silver oxysulfide, BiAgOS, was prepared by a hydrothermal method. Its structural, morphological and optoelectronic properties were investigated and compared with bismuth copper oxysulfide (BiCuOS). Rietveld refinement of the powder X-ray diffraction (XRD) measurements revealed that the BiAgOS and BiCuOS crystals have the same structure as ZrSiCuAs: the tetragonal space group P4/nmm. X-ray photoelectron spectroscopy (XPS) analyses confirmed that the BiAgOS has a high purity, in contrast with BiCuOS, which tends to have Cu vacancies. The Ag has a monovalent oxidation state, whereas Cu is present in the oxidation states of +1 and +2 in the BiCuOS system. Combined with experimental measurements, density functional theory calculations employing the range-separated hybrid HSE06 exchange-correlation functional with spin-orbit coupling quantitatively elucidated photophysical properties such as ab-sorption coefficients, effective masses and dielectric constants. BiCuOS and BiAgOS were found to have indirect bandgaps of 1.1 and 1.5 eV, respectively. Both possess high dielectric constants and low electron and hole effective masses. Therefore, these materials are expected to have high exciton dissociation capabilities and excellent carrier diffusion properties. This study reveals that BiAgOS is a promising candidate for photoconversion applications.

  15. Optoelectronic Properties of Hybrid Titania Nanotubes/Hematite Nanoparticles Structures (United States)

    Wang, Lili; Panaitescu, Eugen; Menon, Latika


    TiO2/Fe2O3 nanostructures are becoming promising alternatives for improving cost effectiveness (in /W) of emerging photovoltaic devices such as dye sensitized or metal-insulator-semiconductor solar cells, combining the low cost, earth abundance and stability of the materials with the enhanced performance offered by the nanoscale architecture. We investigated novel, high quality titania/hematite composites, namely hematite nanoparticle decorated titania nanotube arrays, which were obtained by a simple, inexpensive and easily scalable two-step process, electrochemical anodization of titanium followed by forced hydrolysis. The titania nanotubular scaffold provides a large active surface area, while the iron oxide nanoparticles significantly broaden the light absorption range into the visible region. The morphological and structural characteristics of the samples were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The light absorption efficiency was measured by diffuse reflectance spectroscopy (DRS), and the optoelectronic behavior of the hybrid structures was analyzed by IV measurements under simulated solar illumination. The influence of the synthesis process and the structure design on the photovoltaic performance is currently investigated for optimal device prototyping.

  16. An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices

    CERN Document Server

    De Sanctis, Adolfo; Townsend, Nicola J; Craciun, Monica F; Russo, Saverio


    Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. They can be the key to improving bandwidths in telecommunications, capacity in data storage, new features in consumer electronics, safety devices and medical equipment. The characterization these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically-thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through ...

  17. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    KAUST Repository

    Tsai, Yu-Lin


    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

  18. Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics. (United States)

    Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M


    We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

  19. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena (United States)

    Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He-Hau, Jr.


    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells.

  20. Optoelectronic implementation of multilayer perceptron and Hopfield neural networks (United States)

    Domanski, Andrzej W.; Olszewski, Mikolaj K.; Wolinski, Tomasz R.


    In this paper we present an optoelectronic implementation of two networks based on multilayer perceptron and the Hopfield neural network. We propose two different methods to solve a problem of lack of negative optical signals that are necessary for connections between layers of perceptron as well as within the Hopfield network structure. The first method applied for construction of multilayer perceptron was based on division of signals into two channels and next to use both of them independently as positive and negative signals. The second one, applied for implementation of the Hopfield model, was based on adding of constant value for elements of matrix weight. Both methods of compensation of lack negative optical signals were tested experimentally as optoelectronic models of multilayer perceptron and Hopfield neural network. Special configurations of optical fiber cables and liquid crystal multicell plates were used. In conclusion, possible applications of the optoelectronic neural networks are briefly discussed.

  1. History of modern optics ad optoelectronics development in China

    CERN Document Server

    Tian, Shouyun


    This book presents a collection of memoir papers on the development of modern and contemporary optics and optoelectronics in China from the 18th to 20th centuries. The papers were written by famous scientists in China, including members of the Chinese Academy of Sciences and the Chinese Academy of Engineering, sharing their experience in different fields of optics and optoelectronics development. This is a unique book in understanding the natural science history of optics and optoelectronics. It gives you the general idea about how the western optical science spread to China in the 17th to 18th century; the cradle of the contemporary optics in China; Birth, development and application of lasers in China; high energy and high power lasers for laser antiballistic missile and laser nuclear fusion; development of Chinese optical communication and optical information storage; laser and infrared optics research for space science; development of Chinese optical instruments, etc.

  2. Practical opto-electronics an illustrated guide for the laboratory

    CERN Document Server

    Protopopov, Vladimir


    This book explains how to create opto-electronic systems in a most efficient way, avoiding typical mistakes. It covers light detection techniques, imaging, interferometry, spectroscopy, modulation-demodulation, heterodyning, beam steering, and many other topics common to laboratory applications. The focus is made on self-explanatory figures rather than on words. The book guides the reader through the entire process of creating problem-specific opto-electronic systems, starting from optical source, through beam transportation optical arrangement, to photodetector and data acquisition system. The relevant basics of beam propagation and computer-based raytracing routines are also explained, and sample codes are listed. the book teaches important know-how and practical tricks that are never disclosed in scientific publications.  The book can become the reader's personal adviser in the world of opto-electronics and navigator in the ocean of the market of optical components and systems. Succinct, well-illustrate...

  3. New melt-processable thermoplastic polyimides for opto-electronic applications (United States)

    Narayanan, Aditya; Haralur, Gurulingamurthy


    The rapid development and adoption of digital technology is leading to an increase in demand for smaller, faster digital data devices and faster digital telecommunication networks. This trend requires increased network bandwidth to handle large amounts of data and seamless integration of network devices with compatible end-user devices. This need is being met by using fiber-optic and photonics technology, infra-red (IR) signals to transmit information, and is fundamental changing the communication industry, thereby creating a need for new polymeric materials. New ULTEM* polyetherimide (PEI) and EXTEM* thermoplastic polyimide (TPI) resins meet the material requirements for the optoelectronics industry. These resins have building blocks enabling IR light transmission without degrading signal quality. They can be injection-molded into thin, precision optical lenses and connectors. ULTEM* resins are been widely used in this industry as fiber-optic components in trans-receivers. EXTEM* resins are amenable to lead-free soldering (LFS), a greener industrial assembly process. While still being IR-transparent, EXTEM* resin is an ideal material for LFS capable substrates, connectors and lenses. An optical product portfolio has been developed and is being presented as a solution to the opto-electronics component industry and some of the successful applications therein.


    Directory of Open Access Journals (Sweden)

    S. S. Kolasha


    Full Text Available Spacecraft optoelectronic modules traditionally have aluminum alloy or titanium alloy casing which substantial weight increases fuel consumption required to put them into orbit and, consequently, total cost of the project. Carbon fiber reinforced polymer based composite constructive materials is an efficient solution that allows reducing weight and dimensions of large optoelectronic modules 1,5–3 times and the coefficient of linear thermal expansion 15–20 times if compared with metals. Optical characteristic is a crucial feature of carbon-fibre-reinforced polymer that determines composite material interaction with electromagnetic emission within the optical range. This work was intended to develop a method to evaluate Carbon fiber reinforced polymer optoelectronic modules casing effect on lens scattering by computer simulation with Zemax application software package. Degrees of scattered, reflected and absorbed radiant flux effect on imaging quality are described here. The work included experimental study in order to determine bidirectional reflectance distribution function by goniometric method for LUP-0.1 carbon fabric check test pieces of EDT-69U epoxy binder with EPOFLEX-0.4 glue layer and 5056-3.5-23-A aluminium honeycomb filler. The scattered emission was registered within a hemisphere above the check test piece surface. Optical detection direction was determined with zenith (0º < θ < 90º and azimuth (0º < φ < 180º angles with 10° increment. The check test piece surface was proved to scatter emission within a narrow angle range (approximately 20° with clear directivity. Carbon fiber reinforced polymers was found to feature integrated reflectance coefficient 3 to 4 times greater than special coatings do. 

  5. Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects (United States)

    Gao, Yuanda

    Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

  6. High bandgap III-V alloys for high efficiency optoelectronics (United States)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark


    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  7. Research on optical multistage butterfly interconnection and optoelectronic logic operations (United States)

    Sun, De-Gui; Wang, Na-Xin; He, Li-Ming; Xu, Mai; Liang, Guo-Dong; Zheng, Jie

    We briefly study butterfly interconnection construction and propose an experimental approach to implementing multistage butterfly interconnection networks by using a special interconnection grating with the reflection ladder structure and liquid crystal light valves (LCLVs), and implementing the optical butterfly interconnections and primary optical digital logic operations. With this foundation, we analyse and discuss the features of the approach by computer simulations. In terms of our theoretical analyses, we improve the ring-circuit approach, based on the reflection ladder structure gratings, into a more suitable form based on transmission gratings, and we substitute the LCLVs with optoelectronic switches. Finally we give the experimental results of both the transmission grating and optoelectronic switches.

  8. Magnetic and optoelectronic properties of gold nanocluster-thiophene assembly. (United States)

    Qin, Wei; Lohrman, Jessica; Ren, Shenqiang


    Nanohybrids consisting of Au nanocluster and polythiophene nanowire assemblies exhibit unique thermal-responsive optical behaviors and charge-transfer controlled magnetic and optoelectronic properties. The ultrasmall Au nanocluster enhanced photoabsorption and conductivity effectively improves the photocurrent of nanohybrid based photovoltaics, leading to an increase of power conversion efficiency by 14 % under AM 1.5 illumination. In addition, nanohybrids exhibit electric field controlled spin resonance and magnetic field sensing behaviors, which open up the potential of charge-transfer complex system where the magnetism and optoelectronics interact.

  9. A reconfigurable optoelectronic interconnect technology for multi-processor networks

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.C.; Cheng, J. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Zolper, J.C.; Klem, J. [Sandia National Labs., Albuquerque, NM (United States)


    This paper describes a new optical interconnect architecture and the integrated optoelectronic circuit technology for implementing a parallel, reconfigurable, multiprocessor network. The technology consists of monolithic array`s of optoelectronic switches that integrate vertical-cavity surface-emitting lasers with three-terminal heterojunction phototransistors, which effectively combined the functions of an optical transceiver and an optical spatial routing switch. These switches have demonstrated optical switching at 200 Mb/s, and electrical-to-optical data conversion at > 500 Mb/s, with a small-signal electrical-to-optical modulation bandwidth of {approximately} 4 GHz.

  10. High bandgap III-V alloys for high efficiency optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark


    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  11. Applications of HTSC films in hybrid optoelectronic devices (United States)

    Pavuna, Davor


    An overview is given of potential applications of high-Tc superconductors (HTSC) in the context of hybrid optoelectronic technology. The main requirements are described for the in situ growth of epitaxial YBa2Cu3O(7-delta) (YBCO) films on SrTiO3 and discuss the properties of YBCO layers grown on Si and GaAs substrates with intermediate, conducting indium-tin-oxide buffer layers. The performances of the microbridge and the meander type of HTSC bolometer are compared, and several concepts are discussed that may become relevant for future hybrid optoelectronic technology.

  12. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... (United States)


    ... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... Singapore; and Avago Technologies U.S. Inc. of San Jose, California. Letters supplementing the complaint... the United States after importation of certain optoelectronic devices for fiber optic...

  13. Optoelectronic and Photovoltaic Properties of the Air-Stable Organohalide Semiconductor (CH 3 NH 3 ) 3 Bi 2 I 9

    KAUST Repository

    Abulikemu, Mutalifu


    Lead halide perovskite materials have shown excellent optoelectronic as well as photovoltaic properties. However, the presence of lead and the chemical instability relegate lead halide perovskites to research applications only. Here, we investigate an emerging lead-free and air stable compound (CH3NH3)3Bi2I9 as a non-toxic potential alternative to lead halide perovskites. We have synthesized thin films, powders and millimeter-scale single crystals of (CH3NH3)3Bi2I9 and investigated their structural and optoelectronic properties. We demonstrate that the degree of crystallinity strongly affects the optoelectronic properties of the material, resulting in significantly different band gaps in polycrystalline thin films and single crystals. Surface photovoltage spectroscopy reveals outstanding photocharge generation in the visible (<700 nm), while transient absorption spectroscopy and space charge limited current measurements point to a long exciton lifetime and a high carrier mobility, respectively, similar to lead halide perovskites, pointing to the remarkable potential of this semiconductor. Photovoltaic devices fabricated using this material yield low power conversion efficiency (PCE) to date, but the PCE is expected to rise with improvements in thin film processing and device engineering.

  14. Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation) (United States)

    Palai, Ratnakar


    Since last four decades the information and communication technologies are relying on the semiconductor materials. Currently a great deal of attention is being focused on adding spin degree-of-freedom into semiconductor to create a new area of solid-state electronics, called spintronics. In spintronics not only the current but also its spin state is controlled. Such materials need to be good semiconductors for easy integration in typical integrated circuits with high sensitivity to the spin orientation, especially room temperature ferromagnetism being an important desirable property. GaN is considered to be the most important semiconductor after silicon. It is widely used for the production of green, blue, UV, and white LEDs in full color displays, traffic lights, automotive lightings, and general room lighting using white LEDs. GaN-based systems also show promise for microwave and high power electronics intended for radar, satellite, wireless base stations and spintronic applications. Rare earth (Yb, Eu, Er, and Tm) doped GaN shows many interesting optoelectronic and magnetoptic properties e. g. sharp emission from UV through visible to IR, radiation hardness, and ferromagnetism. The talk will be focused on fabrication, optoelectronic (photoluminescence, cathodeluminescence, magnetic, and x-ray photoelectron spectroscopy) properties of some rare earth doped GaN and InGaN semiconductor nanostructures grown by plasma assisted molecular beam epitaxy (MBE) and future applications.

  15. RIR-MAPLE deposition of conjugated polymers and hybrid nanocomposites for application to optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Stiff-Roberts, Adrienne D.; Pate, Ryan; McCormick, Ryan; Lantz, Kevin R. [Department of Electrical and Computer Engineering, Duke University Box 90291, Durham, NC 27708-0291, 919-660-5560 (United States)


    Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a variation of pulsed laser deposition that is useful for organic-based thin films because it reduces material degradation by selective absorption of infrared radiation in the host matrix. A unique emulsion-based RIR-MAPLE approach has been developed that reduces substrate exposure to solvents and provides controlled and repeatable organic thin film deposition. In order to establish emulsion-based RIR-MAPLE as a preferred deposition technique for conjugated polymer or hybrid nanocomposite optoelectronic devices, studies have been conducted to demonstrate the value added by the approach in comparison to traditional solution-based deposition techniques, and this work will be reviewed. The control of hybrid nanocomposite thin film deposition, and the photoconductivity in such materials deposited using emulsion-based RIR-MAPLE, will also be reviewed. The overall result of these studies is the demonstration of emulsion-based RIR-MAPLE as a viable option for the fabrication of conjugated polymer and hybrid nanocomposite optoelectronic devices that could yield improved device performance.

  16. Synthesis, structure, and opto-electronic properties of organic-based nanoscale heterojunctions

    Directory of Open Access Journals (Sweden)

    Cimrová Vĕra


    Full Text Available Abstract Enormous research effort has been put into optimizing organic-based opto-electronic systems for efficient generation of free charge carriers. This optimization is mainly due to typically high dissociation energy (0.1-1 eV and short diffusion length (10 nm of excitons in organic materials. Inherently, interplay of microscopic structural, chemical, and opto-electronic properties plays crucial role. We show that employing and combining advanced scanning probe techniques can provide us significant insight into the correlation of these properties. By adjusting parameters of contact- and tapping-mode atomic force microscopy (AFM, we perform morphologic and mechanical characterizations (nanoshaving of organic layers, measure their electrical conductivity by current-sensing AFM, and deduce work functions and surface photovoltage (SPV effects by Kelvin force microscopy using high spatial resolution. These data are further correlated with local material composition detected using micro-Raman spectroscopy and with other electronic transport data. We demonstrate benefits of this multi-dimensional characterizations on (i bulk heterojunction of fully organic composite films, indicating differences in blend quality and component segregation leading to local shunts of photovoltaic cell, and (ii thin-film heterojunction of polypyrrole (PPy electropolymerized on hydrogen-terminated diamond, indicating covalent bonding and transfer of charge carriers from PPy to diamond.

  17. Parallel optical interconnects - Implementation of optoelectronics in multiprocessor architectures (United States)

    Frietman, E. E. E.; Dekker, L.; van Nifterick, W.; Jongeling, T. J. M.


    Optoelectronic logic element circuitries are described which can be used for the implementation of a wide variety of interconnection schemes. Particular attention is given to the design, construction, and application of an electrooptic communication system (EOCS) using dedicated free space multiple data distributors and integrated optically writable input buffer arrays with fully parallel access. Some experimental results obtained on the complete EOCS are presented.

  18. Intersatellite communications optoelectronics research at the Goddard Space Flight Center (United States)

    Krainak, Michael A.


    A review is presented of current optoelectronics research and development at the NASA Goddard Space Flight Center for high-power, high-bandwidth laser transmitters; high-bandwidth, high-sensitivity optical receivers; pointing, acquisition, and tracking components; and experimental and theoretical system modeling at the NASA Goddard Space Flight Center. Program hardware and space flight opportunities are presented.

  19. Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires. (United States)

    Léonard, François; Song, Erdong; Li, Qiming; Swartzentruber, Brian; Martinez, Julio A; Wang, George T


    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

  20. Magnetometer Based on the Opto-Electronic Oscillator (United States)

    Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute


    We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

  1. New Results with the Opto-Electronic Oscillators (OEO) (United States)

    Yao, S.; Maleki, L.


    A new class of oscillators based on photonic devices is presented. These opto-electronic oscillators (OEOs) generate microwave oscillation by converting continuous energy from a light source using a feedback circuit which includes a delay element, an electro-optic switch, and a photodetctor.

  2. Stabilizing an optoelectronic microwave oscillator with photonic filters (United States)

    Strekalov, D.; Aveline, D.; Yu, N.; Thompson, R.; Matsko, A. B.; Maleki, L.


    This paper compares methods of active stabilization of an optoelectronic microwave oscillator (OEO) based on insertion of a source of optical group delay into an OEO loop. The performance of an OEO stabilized with either a high- optical cavity or an atomic cell is analyzed. We show that the elements play a role of narrow-band microwave filters improving an OEO stability.

  3. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene. (United States)

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia


    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.

  4. Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD (United States)

    Seidlitz, Daniel; Senevirathna, M. K. I.; Abate, Y.; Hoffmann, A.; Dietz, N.


    This paper presents optoelectronic and structural layer properties of InN and InGaN epilayers grown on sapphire templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPA-MOCVD). Real-time characterization techniques have been applied during the growth process to gain insight of the plasma-assisted decomposition of the nitrogen precursor and associated growth surface processes. Analyzed Plasma Emission Spectroscopy (PES) and UV Absorption Spectroscopy (UVAS) provide detection and concentrations of plasma generated active species (N*/NH*/NHx*). Various precursors have been used to assess the nitrogen-active fragments that are directed from the hollow cathode plasma tube to the growth surface. The in-situ diagnostics results are supplemented with ex-situ materials structures investigation results of nanoscale structures using Scanning Near-field Optical Microscopy (SNOM). The structural properties have been analyzed by Raman spectroscopy and Fourier transform infrared (FTIR) reflectance. The Optoelectronic and optical properties were extracted by modeling the FTIR reflectance (e.g. free carrier concentration, high frequency dielectric constant, mobility) and optical absorption spectroscopy. The correlation and comparison between the in-situ metrology results with the ex-situ nano-structural and optoelectronic layer properties provides insides into the growth mechanism on how plasma-activated nitrogen-fragments can be utilized as nitrogen precursor for group III-nitride growth. The here assessed growth process parameter focus on the temporal precursor exposure of the growth surface, the reactor pressure, substrate temperature and their effects of the properties of the InN and InGaN epilayers.

  5. Contactless optoelectronic technique for monitoring epoxy cure. (United States)

    Cusano, A; Buonocore, V; Breglio, G; Calabrò, A; Giordano, M; Cutolo, A; Nicolais, L


    We describe a novel noninvasive optical technique to monitor the refractive-index variation in an epoxy-based resin that is due to the polymerization process. This kind of resin is widely used in polymer matrix composites. It is well known that the process of fabricating a thermoset-based composite involves mass and heat transfer coupled with irreversible chemical reactions that induce physical changes. To improve the quality and the reliability of these materials, monitoring the cure and optimization of the manufacturing process are of key importance. We discuss the basic operating principles of an optical system based on angle deflection measurements and present typical cure-monitoring results obtained from optical characterization. The method provides a flexible, high-sensitivity, material-independent, low-cost, noninvasive tool for monitoring real-time refractive-index variation.

  6. Basic Electromagnetism and Materials

    CERN Document Server

    Moliton, André


    Basic Electromagnetism and Materials is the product of many years of teaching basic and applied electromagnetism. This textbook can be used to teach electromagnetism to a wide range of undergraduate science majors in physics, electrical engineering or materials science. However, by making lesser demands on mathematical knowledge than competing texts, and by emphasizing electromagnetic properties of materials and their applications, this textbook is uniquely suited to students of materials science. Many competing texts focus on the study of propagation waves either in the microwave or optical domain, whereas Basic Electromagnetism and Materials covers the entire electromagnetic domain and the physical response of materials to these waves. Professor André Moliton is Director of the Unité de Microélectronique, Optoélectronique et Polymères (Université de Limoges, France), which brings together three groups studying the optoelectronics of molecular and polymer layers, micro-optoelectronic systems for teleco...

  7. An exploration of deep level defects in compound semiconductors using optoelectronic modulation spectroscopy

    CERN Document Server

    Chiu, C H


    The work is concerned with the detection and characterisation of defect states within semiconductor materials. OptoElectronic Modulation Spectroscopy (OEMS) has been adapted to isolate the electrical and optical responses of traps in semiconductor device and materials. Sub band-gap photons are used to permit penetration into the semiconductor to excite charges in deep defect states. In order to isolate the effect of back-plane charge traps in MESFET structures gate depletion region modulation of the channel current has been eliminated by using a closed loop control system to stabilise the gate depletion capacitance continuously throughout the measurement of the OEMS spectrum. Any change of the channel current will then be due only to the charges within the back-plane interface depletion region between the active layer and buffer/substrate. Depth defined OEMS has also been demonstrated and used to detect defects situated between two preset gate depletion regions. The location of the defect states is therefore ...

  8. Control of Intrinsic Defects in Lithium Niobate Single Crystal for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Rajeev Bhatt


    Full Text Available A single crystal of lithium niobate is an important optoelectronic material. It can be grown from direct melt only in a lithium deficient non-stoichiometric form as its stoichiometric composition exhibits incongruent melting. As a result it contains a number of intrinsic point defects such as Li-vacancies, Nb antisites, oxygen vacancies, as well as different types of polarons and bipolarons. All these defects adversely influence its optical and ferroelectric properties and pose a deterrent to the effective use of this material. Hence, controlling the defects in lithium niobate has been an exciting topic of research and development over the years. In this article we discuss the different methods of controlling the intrinsic defects in lithium niobate and a comparison of the effect of these methods on the crystalline quality, stoichiometry, optical absorption in the UV-vis region, electronic band-gap, and refractive index.

  9. Ab initio Description of Optoelectronic Properties at Defective Interfaces in Solar Cells

    CERN Document Server

    Czaja, Philippe; Giusepponi, Simone; Gusso, Michele; Aeberhard, Urs


    In order to optimize the optoelectronic properties of novel solar cell architectures, such as the amorphous-crystalline interface in silicon heterojunction devices, we calculate and analyze the local microscopic structure at this interface and in bulk a-Si:H, in particular with respect to the impact of material inhomogeneities. The microscopic information is used to extract macroscopic material properties, and to identify localized defect states, which govern the recombination properties encoded in quantities such as capture cross sections used in the Shockley-Read-Hall theory. To this end, atomic configurations for a-Si:H and a-Si:H/c-Si interfaces are generated using molecular dynamics. Density functional theory calculations are then applied to these configurations in order to obtain the electronic wave functions. These are analyzed and characterized with respect to their localization and their contribution to the (local) density of states. GW calculations are performed for the a-Si:H configuration in order...

  10. Nonlinear Optics in Optoelectronic Integration with Some Novel Waveguide Devices. (United States)

    Vakhshoori, Daryoosh

    By integration we mean realizing an integrable solution to existing discrete devices which perform some useful operation. Systems are built from these functional parts. System integration requires compatible integration of these parts. At present the most important example that also relates to our work is communication systems. For this system to work reliably, the optical pulses should be stable in time and shape (small time and amplitude jitter.) The devices that measure these properties are optical correlators. These devices are bulky, occupying a cubic foot of volume with no satisfactory integrable counterpart. Here we present an integrable waveguide correlator which experimentally measured pulses from 150fsec to 12psec with an average guide power of sub mW to 2mW in the spectral range of 1.7mum to 1.06mu m. All these measurements were performed on the same waveguide structure without mechanical movements where the spectral range was limited to the band gap of the waveguide material, GaAs in our case. The other communication scheme uses wavelength division multiplexing. Optical spectrometers are ~1 meter long devices capable of 0.1A spectral resolution. Again, like correlators, there is no satisfactory integrable counterpart. In this thesis, we present an integrable parametric waveguide spectrometer capable of measuring individual modes of semiconductor laser diodes and their movement as a function of laser current. For our experiments, the resolving power of the waveguide device was about 3A and is easily extendible to the sub A range. It should be pointed out that these spectrometer devices can also be used in stabilizing laser diode frequencies which are required for the realization of reliable wavelength division multiplexed systems. Last, but not least, a possible coherent visible surface emitting waveguide device capable of mW range powers is also presented. The motivation for this study is the ever growing market for shorter wavelength semiconductor

  11. Battlefield Lasers and Opto-electronics Systems (Review Paper

    Directory of Open Access Journals (Sweden)

    A. K. Maini


    Full Text Available During the last four decades or so, there has been an explosive growth in commercial, industrial, medical, scientific, technological, and above all, military usage of laser devices and systems. In fact, lasers have influenced every conceivable area of application during this period. While the expansion of non-military application spectrum of lasers is primarily driven by emergence of a large number of laser wavelengths followed by ever increasing power levels and reducing price tags at which those wavelengths could be generated, the military applications of lasers and related electro-optic devices have grown mainly because of technological maturity of the lasers that were born in the late 1960's and the early 1970's. Lasers have been used in various military applications since the early days of development that followed the invention of this magical device. There has been large scale proliferation of lasers and opto-electronic devices and systems for applications like range finding, target designation, target acquisition and tracking, precision guided munitions, etc. during 1970's and 1980's. These devices continue to improve in performance and find increased acceptance and usage in the contemporary battlefield scenario. Technological advances in optics, opto-electronics, and electronics, leading to more rugged, reliable, compact and efficient laser devices are largely responsible for making these indispensable in modern warfare. Past one decade or so has seen emergence of some new potential areas of usage. Some of these areas include rapid growth in the usage of lasers and opto-electronics devices and systems for electrooptic countermeasure (EOCM applications, test and evaluation systems that can perform online functionality checks on military opto-electronics systems and also their interoperability. In this paper, an overview of the current and emerging military applications of lasers and opto-electronics systems has been given with an outline

  12. Photochemical deterioration of the organic/metal contacts in organic optoelectronic devices (United States)

    Wang, Qi; Williams, Graeme; Tsui, Ting; Aziz, Hany


    We study the effect of exposure to light on a wide range of organic/metal contacts that are commonly used in organic optoelectronic devices and found that irradiation by light in the visible and UV range results in a gradual deterioration in their electrical properties. This photo-induced contact degradation reduces both charge injection (i.e., from the metal to the organic layer) and charge extraction (i.e., from the organic layer to the metal). X-ray photoelectron spectroscopy (XPS) measurements reveal detectable changes in the interface characteristics after irradiation, indicating that the photo-degradation is chemical in nature. Changes in XPS characteristics after irradiation suggests a possible reduction in bonds associated with organic-metal complexes. Measurements of interfacial adhesion strength using the four-point flexure technique reveal a decrease in organic/metal adhesion in irradiated samples, consistent with a decrease in metal-organic bond density. The results shed the light on a new material degradation mechanism that appears to have a wide presence in organic/metal interfaces in general, and which likely plays a key role in limiting the stability of various organic optoelectronic devices such as organic light emitting devices, organic solar cells, and organic photo-detectors.

  13. Evaluation of sea bream (Sparus aurata) shelf life using an optoelectronic nose. (United States)

    Zaragozá, Patricia; Fuentes, Ana; Fernández-Segovia, Isabel; Vivancos, José-Luis; Rizo, Arantxa; Ros-Lis, José V; Barat, José M; Martínez-Máñez, Ramón


    A new optoelectronic nose for the shelf-life assessment of fresh sea bream in cold storage has been developed. The chromogenic array used eight sensing materials (based on aluminium oxide and silica gel) containing pH indicators, Lewis acids and an oxidation-reduction indicator. The colour changes of the sensor array were characteristic of sea bream spoilage. Colour modulations were measured on day 0 and for the samples held in cold storage for 2, 4, 7, 9 and 11 days. Determination of moisture content, pH, total volatile basic nitrogen (TVB-N), drip loss, ATP-related compounds and K(1)-value and microbial (mesophilic bacteria and Enterobacteriaceae) analyses were carried out on the same days. The changes in the chromogenic arrays data were processed by statistical analysis (PCA). Moreover, PLS statistical studies allowed the creation of models to correlate the chromogenic data with concentrations of mesophilic and Enterobacteriaceae. The results suggest the feasibility of this system to help develop optoelectronic noses for fish freshness monitoring.

  14. Structural phase transition and opto-electronic properties of NaZnAs

    Energy Technology Data Exchange (ETDEWEB)

    Djied, A.; Seddik, T.; Merabiha, O. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 (Algeria); Murtaza, G. [Materials Modeling Lab, Department of Physics, Islamia College University, Peshawar (Pakistan); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 (Algeria); Ahmed, R., E-mail: [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Bin-Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Uğur, Ş. [Department of Physics, Faculty of Sciences, Gazi University, 06500 Teknikokullar, Ankara (Turkey); Bouhemadou, A. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University Setif 1, 19000 Setif (Algeria)


    Highlights: • First competent characterizations of NaZnAs at the level of FP-LAPW+lo. • NaZnAs, a potential alternative candidate to III-V for photovoltaic applications. • NaZnAs, a cheaper and abundantly available direct band gap semiconductor. • Potential material for solar radiation absorber from infrared to ultraviolet. - Abstract: In this study, we predict the structural phase transitions as well as opto-electronic properties of the filled-tetrahedral (Nowotny-Juza) NaZnAs compound. Calculations employ the full potential (FP) linearized augmented plane wave (LAPW) plus local orbitals (lo) scheme. The exchange-correlation potential is treated within the generalized gradient approximation of Perdew-Burke and Ernzerhof (GGA-PBE). In addition, Tran and Blaha (TB) modified Becke-Johnson (mBJ) potential is also used to obtain more accurate optoelectronic properties. Geometry optimization is performed to obtain reliable total energies and other structural parameters for each NaZnAs phase. In our study, the sequence of the structural phase transition on compression is Cu{sub 2}Sb-type → β → α phase. NaZnAs is a direct (Γ-Γ) band gap semiconductor for all the structural phases. However, compared to PBE-GGA, the mBJ approximation reproduces better fundamental band gaps. Moreover, for insight into its potential for photovoltaic applications, different optical parameters are studied.

  15. Simulation and Numerical Modeling of the Self-assembly of an Optoelectronic Peptide (United States)

    Mansbach, Rachael; Ferguson, Andrew

    We report molecular dynamics simulations of the self-assembly of synthetic π-conjugated oligopeptides into optoelectronic nanostructures. The electronic properties provide the basis for an array of organic electronic devices, such as light-emitting diodes, field-effect transistors, and solar cells. Control of the structure, stability, and kinetics of self-assembled organic electronics by tuning monomer chemistry and environmental conditions presents a powerful route to the fabrication of biocompatible ``designer materials.'' We have performed coarse-grained simulations of the self-assembly of several hundred peptides over microsecond time scales to probe the morphology and kinetics of aggregation with molecular-level detail. We have subsequently used this simulation data to parameterize a kinetic aggregation model based on Smoluchowski coagulation theory to enable prediction of aggregation dynamics on millisecond time scales. These numerical models are now being integrated into a multi-physics model of peptide aggregation in a microfluidic flow cell developed by our experimental collaborators to model the self-assembly of diverse peptide architectures under tailored flow-fields for the fabrication of biocompatible assemblies with defined morphology and optoelectronic function.

  16. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics (United States)

    Zhuang, Q. D.; Alradhi, H.; Jin, Z. M.; Chen, X. R.; Shao, J.; Chen, X.; Sanchez, Ana M.; Cao, Y. C.; Liu, J. Y.; Yates, P.; Durose, K.; Jin, C. J.


    InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

  17. Assessment of Density Functional Methods for Exciton Binding Energies and Related Optoelectronic Properties

    CERN Document Server

    Lee, Jui-Che; Lin, Shiang-Tai


    The exciton binding energy, the energy required to dissociate an excited electron-hole pair into free charge carriers, is one of the key factors to the optoelectronic performance of organic materials. However, it remains unclear whether modern quantum-mechanical calculations, mostly based on Kohn-Sham density functional theory (KS-DFT) and time-dependent density functional theory (TDDFT), are reliably accurate for exciton binding energies. In this study, the exciton binding energies and related optoelectronic properties (e.g., the ionization potentials, electron affinities, fundamental gaps, and optical gaps) of 121 small- to medium-sized molecules are calculated using KS-DFT and TDDFT with various density functionals. Our KS-DFT and TDDFT results are compared with those calculated using highly accurate CCSD and EOM-CCSD methods, respectively. The omegaB97, omegaB97X, and omegaB97X-D functionals are shown to generally outperform (with a mean absolute error of 0.36 eV) other functionals for the properties inve...

  18. Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance

    KAUST Repository

    Banavoth, Murali


    Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including various fabrication methods, device architectures, and surface passivation, progress is yet to be made in understanding the actual operational temperature on the electronic properties and the device performances. Therefore, the substantial effect of temperature on the optoelectronic properties, charge separation, charge recombination dynamics, and photoconversion efficiency are explored. The results clearly demonstrated a significant enhancement in the carrier mobility, photocurrent, charge carrier lifetime, and solar cell performance in the 60 ± 5 °C temperature range. In this temperature range, perovskite crystal exhibits a highly symmetrical relaxed cubic structure with well-aligned domains that are perpendicular to a principal axis, thereby remarkably improving the device operation. This finding provides a new key variable component and paves the way toward using perovskite crystals in highly efficient photovoltaic cells.

  19. Widrow-cellular neural network and optoelectronic implementation (United States)

    Bal, Abdullah

    A new type of optoelectronic cellular neural network has been developed by providing the capability of coefficients adjusment of cellular neural network (CNN) using Widrow based perceptron learning algorithm. The new supervised cellular neural network is called Widrow-CNN. Despite the unsupervised CNN, the proposed learning algorithm allows to use the Widrow-CNN for various image processing applications easily. Also, the capability of CNN for image processing and feature extraction has been improved using basic joint transform correlation architecture. This hardware application presents high speed processing capability compared to digital applications. The optoelectronic Widrow-CNN has been tested for classic CNN feature extraction problems. It yields the best results even in case of hard feature extraction problems such as diagonal line detection and vertical line determination.

  20. Pulse-train solutions and excitability in an optoelectronic oscillator (United States)

    Rosin, D. P.; Callan, K. E.; Gauthier, D. J.; Schöll, E.


    We study an optoelectronic time-delay oscillator with bandpass filtering for different values of the filter bandwidth. Our experiments show novel pulse-train solutions with pulse widths that can be controlled over a three-order-of-magnitude range, with a minimum pulse width of ~150 ps. The equations governing the dynamics of our optoelectronic oscillator are similar to the FitzHugh-Nagumo model from neurodynamics with delayed feedback in the excitable and oscillatory regimes. Using a nullclines analysis, we derive an analytical proportionality between pulse width and the low-frequency cutoff of the bandpass filter, which is in agreement with experiments and numerical simulations. Furthermore, the nullclines help to describe the shape of the waveforms.

  1. Wide bandgap III-nitride nanomembranes for optoelectronic applications. (United States)

    Park, Sung Hyun; Yuan, Ge; Chen, Danti; Xiong, Kanglin; Song, Jie; Leung, Benjamin; Han, Jung


    Single crystalline nanomembranes (NMs) represent a new embodiment of semiconductors having a two-dimensional flexural character with comparable crystalline perfection and optoelectronic efficacy. In this Letter, we demonstrate the preparation of GaN NMs with a freestanding thickness between 90 to 300 nm. Large-area (>5 × 5 mm(2)) GaN NMs can be routinely obtained using a procedure of conductivity-selective electrochemical etching. GaN NM is atomically flat and possesses an optical quality similar to that from bulk GaN. A light-emitting optical heterostructure NM consisting of p-GaN/InGaN quantum wells/GaN is prepared by epitaxy, undercutting etching, and layer transfer. Bright blue light emission from this heterostructure validates the concept of NM-based optoelectronics and points to potentials in flexible applications and heterogeneous integration.

  2. D-π-A conjugated molecules for optoelectronic applications. (United States)

    Kim, Tae-Dong; Lee, Kwang-Sup


    Dipolar chromophores consisting of electron donor (D) and electron acceptor (A) groups connected through a conjugated π-bridge have been actively studied and integrated in optoelectronic and electronic devices. Generally, such π-conjugated molecules provide substantial delocalization of π-electrons over the molecules. Here, a brief overview of recent research on D-π-A dipolar chromophores including their syntheses and several promising applications is reported, especially in nonlinear optical devices and organic photovoltaics. Structure/property relationships are discussed in order to exploit the potentials by tuning the π-electron density, polarizability, and HOMO-LUMO band gap of the chromophores. Some of the examples may well set the stage for chip-scale integration of optoelectronics as well as the realization of an important array of new device technologies. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Adaptive Optoelectronic Eyes: Hybrid Sensor/Processor Architectures (United States)


    J.  Lange , C. von der Malsburg, R. P. Würtz, and W. Konen, “Distortion Invariant Object Recognition Adaptive Optoelectronic Eyes: Hybrid Sensor...Meeting, Dallas, Texas, (November, 1998). 17.  G. Sáry, G. Kovács, K. Köteles, G.  Benedek , J. Fiser, and I. Biederman, “Selectivity Variations in Monkey

  4. Opto-electronics on Single Nanowire Quantum Dots



    An important goal for nanoscale opto-electronics is the transfer of single electron spin states into single photon polarization states (and vice versa), thereby interfacing quantum transport and quantum optics. Such an interface enables new experiments in the field of quantum information processing. Single and entangled photon-pair generation can be used for quantum cryptography. Furthermore, photons can be used in the readout of a quantum computer based on electron spins. Semiconducting nano...

  5. Accurate manufacturing and production of optoelectronic parts and modules (United States)

    Hannula, Tapio; Karioja, Pentti; Keraenen, Kimmo; Kopola, Harri K.; Malinen, Jouko; Ollila, Jyrki


    The trends in optoelectronic products are towards higher integration level of optics, electronics and mechanics. It means smaller dimensions and tighter packaging density. The precisions in component manufacturing and accuracies in module assemblings typically are in 10 to 50 micrometer range. Due to demands of the production in series of tens of thousands it means new type of know-how in production and assembling technologies.

  6. Organometallic perovskites for optoelectronic applications (Conference Presentation) (United States)

    Levchuk, Levgen; Hoegl, Florian; Brandl, Marco; Osvet, Andres; Hock, Rainer; Herre, Patrick; Wolfgang, Wolfgang; Schweizer, Peter; Spiecker, Erdmann; Batentschuk, Miroslaw; Brabec, Christoph


    Organometallic halide perovskites CH3NH3BX3 (B= Pb, Sn, Ge; X = I, Br, Cl) have become one of the most promising semiconductors for solar cell applications, reaching power conversion efficiencies beyond 20%. Improving our ability to harness the full potential of organometal halide perovskites requires the development of more reliable synthesis routines of well defined, reproducible and defect free reference systems allowing to study the fundamental photo-physical processes. In this study we present size and band gap engineering for organo-lead perovskites crystallites with various shapes and sizes ranging from the 5 nm regime all the way to 1 cm. Colloidal nano-crystals, micro-crystlline particles as well as single crystals are demonstrated with excellent purity and control in shape and size are demonstrated. The structural, optical and photo-physical properties of these reference materials are investigated and analyzed as function of their size and shape.

  7. Design, fabrication, and testing of an optoelectronic interface connectorized module (United States)

    Benoit, Jeffrey T.; Grzybowski, Richard R.; Rubino, Robert A.; Newman, Leon A.; Fields, Christopher V.; DiDomenico, John A.; Donofrio, Andrew J.


    As efforts to include fiber optic technology in aircraft flight control electronics have progressed, the need has arisen for a compact optoelectronic interface with an integral multipin optical connector. The United Technologies Research Center optoelectronic Connectorized Module (CM) was designed and built to satisfy this need. This paper will discuss the background, design, fabrication and testing of a completed Connectorized Module. The prototype CM is a four channel speed sensor interface that incorporates established ceramic multichip module (MCM-C) technology with optical emitters and detectors and a multipin fiber optic connector. This combination of technologies yields a compact and rugged interface module. In addition, the CM removes optical fibers, and their associated difficult to repair pigtails, from within the electronic control box. The CM achieves this because: it contains all necessary optoelectronic circuitry, has integral electrical and optical connectors, and is mounted directly on the electronic control box wall, not on an internal circuit board. Although this CM is a speed sensor interface, the flexible nature of MCM-C technology will enable a wide variety of sensor and data communication interfaces to be implemented.

  8. Web-Enabled Optoelectronic Particle-Fallout Monitor (United States)

    Lineberger, Lewis P.


    A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.

  9. Structural and Optoelectronic Properties of Cubic CsPbF3 for Novel Applications

    Institute of Scientific and Technical Information of China (English)

    G. Murtaza; Iftikhar Ahmad; M. Maqbool; H. A. Rahnamaye Aliabad; A. Afaq


    Chemical bonding as well as structural, electronic and optical properties of CsPbF3 are calculated using the highly accurate full potential linearized augmented plane-wave method within the framework of density functional theory (DFT). The calculated lattice constant is found to be in good agreement with the experimental results. The electron density plots reveal strong ionic bonding in Cs-F and strong covalent bonding in Pb-F. The calculations show that the material is a direct and wide bandgap semiconductor with a fundamental gap at the R-symmetry point. Optical properties such as the real and imaginary parts of the dielectric function, refractive index, extinction coefficient, reflectivity, optical conductivity and absorption coefficient are also calculated. Based on the calculated wide and direct bandgap, as well as other optical properties of the compound, it is predicted that CsPbF3 is suitable for optoelectronic devices and anti-reflecting coatings.%Chemical bonding as well as structural,electronic and optical properties of CsPbF3 are calculated using the highly accurate full potential linearized augmented plane-wave method within the framework of density functional theory (DFT).The calculated lattice constant is found to be in good agreement with the experimental results.The electron density plots reveal strong ionic bonding in Cs-F and strong covalent bonding in Pb-F.The calculations show that the material is a direct and wide bandgap semiconductor with a fundamental gap at the R-symmetry point.Optical properties such as the real and imaginary parts of the dielectric function,refractive index,extinction coefficient,reflectivity,optical conductivity and absorption coefficient are also calculated.Based on the calculated wide and direct bandgap,as well as other optical properties of the compound,it is predicted that CsPbF3 is suitable for optoelectronic devices and anti-reflecting coatings.Perovskites have gained high technological and fundamental importance

  10. Mild conditions for deuteration of primary and secondary arylamines for the synthesis of deuterated optoelectronic organic molecules. (United States)

    Krause-Heuer, Anwen M; Yepuri, Nageshwar R; Darwish, Tamim A; Holden, Peter J


    Deuterated arylamines demonstrate great potential for use in optoelectronic devices, but their widespread utility requires a method for large-scale synthesis. The incorporation of these deuterated materials into optoelectronic devices also provides the opportunity for studies of the functioning device using neutron reflectometry based on the difference in the scattering length density between protonated and deuterated compounds. Here we report mild deuteration conditions utilising standard laboratory glassware for the deuteration of: diphenylamine, N-phenylnaphthylamine, N-phenyl-o-phenylenediamine and 1-naphthylamine (via H/D exchange in D2O at 80 °C, catalysed by Pt/C and Pd/C). These conditions were not successful in the deuteration of triphenylamine or N,N-dimethylaniline, suggesting that these mild conditions are not suitable for the deuteration of tertiary arylamines, but are likely to be applicable for the deuteration of other primary and secondary arylamines. The deuterated arylamines can then be used for synthesis of larger organic molecules or polymers with optoelectronic applications.

  11. Investigation of boron modified graphene nanostructures; optoelectronic properties of graphene nanoparticles and transport properties of graphene nanosheets (United States)

    Armaković, Stevan; Armaković, Sanja J.


    In this work we investigated optoelectronic properties of graphene nanoparticles and transport properties of graphene nanosheets and the consequences on these properties after modifications with boron atoms. Within the framework of density functional theory (DFT) several important optoelectronic quantities have been calculated for graphene nanoparticles: oxidation and reduction potentials, hole and electron reorganization energies, while thermally activated delayed fluorescence was assessed by calculations of energy separation between the lowest excited singlet (S1) and triplet (T1) state, Δ E (S1 -T1) . Obtained results show that optoelectronic properties of graphene nanoparticles are significantly improved by the modification with boron atoms and that investigated structures can be considered as a promising organic light emitting diode (OLED) materials. Influence of boron atoms to charge and heat transport properties of graphene nanosheets was investigated as well, employing the self-consistent non-equilibrium Green's functions with DFT. On the other side it is shown that charge transport of graphene nanosheets is not influenced by the introduction of boron atoms, while influence to the phonon subsystem is minimal.

  12. Mild Conditions for Deuteration of Primary and Secondary Arylamines for the Synthesis of Deuterated Optoelectronic Organic Molecules

    Directory of Open Access Journals (Sweden)

    Anwen M. Krause-Heuer


    Full Text Available Deuterated arylamines demonstrate great potential for use in optoelectronic devices, but their widespread utility requires a method for large-scale synthesis. The incorporation of these deuterated materials into optoelectronic devices also provides the opportunity for studies of the functioning device using neutron reflectometry based on the difference in the scattering length density between protonated and deuterated compounds. Here we report mild deuteration conditions utilising standard laboratory glassware for the deuteration of: diphenylamine, N-phenylnaphthylamine, N-phenyl-o-phenylenediamine and 1-naphthylamine (via H/D exchange in D2O at 80 °C, catalysed by Pt/C and Pd/C. These conditions were not successful in the deuteration of triphenylamine or N,N-dimethylaniline, suggesting that these mild conditions are not suitable for the deuteration of tertiary arylamines, but are likely to be applicable for the deuteration of other primary and secondary arylamines. The deuterated arylamines can then be used for synthesis of larger organic molecules or polymers with optoelectronic applications.

  13. Synthesis of Continuous Conductive PEDOT:PSS Nanofibers by Electrospinning: A Conformal Coating for Optoelectronics. (United States)

    Bessaire, Bastien; Mathieu, Maillard; Salles, Vincent; Yeghoyan, Taguhi; Celle, Caroline; Simonato, Jean-Pierre; Brioude, Arnaud


    A process to synthesize continuous conducting nanofibers were developed using PEDOT:PSS as a conducting polymer and an electrospinning method. Experimental parameters were carefully explored to achieve reproducible conductive nanofibers synthesis in large quantities. In particular, relative humidity during the electrospinning process was proven to be of critical importance, as well as doping post-treatment involving glycols and alcohols. The synthesized fibers were assembled as a mat on glass substrates, forming a conductive and transparent electrode and their optoelectronic have been fully characterized. This method produces a conformable conductive and transparent coating that is well-adapted to nonplanar surfaces, having very large aspect ratio features. A demonstration of this property was made using surfaces having deep trenches and high steps, where conventional transparent conductive materials fail because of a lack of conformability.

  14. The optoelectronic properties of a photosystem I-carbon nanotube hybrid system

    Energy Technology Data Exchange (ETDEWEB)

    Kaniber, Simone M; Holleitner, Alexander W [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany); Simmel, Friedrich C [LMU Munich, Geschwister-Scholl-Platz 1, D-80539 Muenchen (Germany); Carmeli, Itai, E-mail: holleitner@wsi.tum.d, E-mail: [Chemistry Department and NIBN, Ben Gurion University, 84105 Be' er Sheva (Israel)


    The photoconductance properties of photosystem I (PSI) covalently bound to carbon nanotubes (CNTs) are measured. We demonstrate that the PSI forms active electronic junctions with the CNTs, enabling control of the CNTs' photoconductance by the PSI. In order to electrically contact the photoactive proteins, a cysteine mutant is generated at one end of the PSI by genetic engineering. The CNTs are covalently bound to this reactive group using carbodiimide chemistry. We detect an enhanced photoconductance signal of the hybrid material at photon wavelengths resonant to the absorption maxima of the PSI compared to non-resonant wavelengths. The measurements prove that it is feasible to integrate photosynthetic proteins into optoelectronic circuits at the nanoscale.

  15. Structural and optoelectronic properties of cubic perovskite RbPbF3

    Indian Academy of Sciences (India)

    K Ephraim Babu; N Murali; D Tirupathi Swamy; V Veeraiah


    The structural and optoelectronic properties of cubic perovskite RbPbF 3 are calculated using all electrons full potential linearized augmented plane wave (FP-LAPW) method. The calculated lattice constant is in good agreement with the experimental result. The calculated band structure shows a direct band gap of 3.07 eV. The contribution of different bands is analysed from the total and partial density of state curves. We identified hybridization of Pb , Pb states with F states in the valence bonding region. Calculations of the optical spectra, viz., the dielectric function, optical reflectivity, absorption coefficient, real part of optical conductivity, refractive index, extinction coefficient and electron energy loss are performed for the energy range of 0-30 eV. Based on the direct bandgap, as well as other optical properties of the compound, it is predicted that this material is useful for vacuum-ultraviolet-transparent (VUV-transparent) applications.

  16. Growth and structural characterisation of Si/SiGe heterostructures for optoelectronic applications (United States)

    Li, X. B.; Neave, J. H.; Norris, D. J.; Cullis, A. G.; Paul, D. J.; Kelsall, R. W.; Zhang, J.


    The availability of compliant substrates has opened new avenues to exploit SiGe materials for optoelectronic applications. In this paper, relevant issues including fabrication of compliant substrates through compositionally graded buffer layers, strain (stress) balance in active layer design and X-ray characterisation are discussed. Quantum cascade structures designed for light emitting devices at THz range are grown using a combination of low pressure chemical vapour deposition and gas source molecular beam epitaxy in a single growth system. The results of structural characterisation by X-ray diffraction and transmission electron microscopy show that by following stringent design criteria, active layer structures more than 4 μm thick with low threading dislocation density can be achieved. Electroluminance in the THz frequency range have been observed from these structures.

  17. In Situ Raman Spectroscopy of COOH-Functionalized SWCNTs Trapped with Optoelectronic Tweezers

    Directory of Open Access Journals (Sweden)

    Peter J. Pauzauskie


    Full Text Available Optoelectronic tweezers (OETs were used to trap and deposit aqueous dispersions of carboxylic-acid-functionalized single-walled carbon nanotube bundles. Dark-field video microscopy was used to visualize the dynamics of the bundles both with and without virtual electrodes, showing rapid accumulation of carbon nanotubes when optical virtual electrodes are actuated. Raman microscopy was used to probe SWCNT materials following deposition onto metallic fiducial markers as well as during trapping. The local carbon nanotube concentration was observed to increase rapidly during trapping by more than an order of magnitude in less than one second due to localized optical dielectrophoresis forces. This combination of enrichment and spectroscopy with a single laser spot suggests a broad range of applications in physical, chemical, and biological sciences.

  18. Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications (United States)

    Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.


    The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

  19. Acousto-optic collinear filter with optoelectronic feedback (United States)

    Mantsevich, S. N.; Balakshy, V. I.; Kuznetsov, Yu. I.


    A spectral optoelectronic system combining a collinear acousto-optic cell fabricated of calcium molybdate single crystal and a positive electronic feedback is proposed first and examined theoretically and experimentally. The feedback signal is formed at the cell output due to the optical heterodyning effect with the use of an unconventional regime of cell operation. It is shown that the feedback enables controlling spectral characteristics of the acousto-optic cell, resulting in enhancing the spectral resolution and the accuracy of optical wavelength determination. In the experiment, maximal filter passband narrowing was as great as 37 times.

  20. Antenna-enhanced optoelectronic probing of carbon nanotubes. (United States)

    Mauser, Nina; Hartmann, Nicolai; Hofmann, Matthias S; Janik, Julia; Högele, Alexander; Hartschuh, Achim


    We report on the first antenna-enhanced optoelectronic microscopy studies on nanoscale devices. By coupling the emission and excitation to a scanning optical antenna, we are able to locally enhance the electroluminescence and photocurrent along a carbon nanotube device. We show that the emission source of the electroluminescence can be pointlike with a spatial extension below 20 nm. Topographic and antenna-enhanced photocurrent measurements reveal that the emission takes place at the location of highest local electric field indicating that the mechanism behind the emission is the radiative decay of excitons created via impact excitation.

  1. Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures


    Chu, Sheng


    Optoelectronics devices based on ZnO thin films and nanostructures are discussed in this dissertation. A ZnO homojunction LED was demonstrated. Sb-doped p-type ZnO and Ga-doped n-type ZnO on Si (100) substrate were used for the LED device. After achieving ohmic contacts on both types of ZnO, the device showed rectifying current-voltage (I-V) characteristics. Under forward bias, the device successfully showed ultraviolet emissions. The emission properties were analyzed and the emission was con...

  2. Wonder of nanotechnology quantum optoelectronic devices and applications

    CERN Document Server

    Razeghi, Manijeh; von Klitzing, Klaus


    When you look closely, Nature is nanotechnology at its finest. From a single cell, a factory all by itself, to complex systems, such as the nervous system or the human eye, each is composed of specialized nanostructures that exist to perform a specific function. This same beauty can be mirrored when we interact with the tiny physical world that is the realm of quantum mechanics.The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, edited by Manijeh Razeghi, Leo Esaki, and Klaus von Klitzing focuses on the application of nanotechnology to modern semiconductor optoelectr

  3. Optoelectronic set for measuring reflectance spectrum of living human skin (United States)

    Gryko, Lukasz; Zajac, Andrzej; Gilewski, Marian; Kulesza, Ewa


    In the paper the authors present the developed optoelectronic set for measuring spectral reflectance of living human skin. The basic elements of the set are: the illuminator consists of the LED illuminator emitting a uniform distribution of spectral irradiance in the exposed field, the semispherical measuring chamber and the spectrometer which measures spectrum of reflected radiation. Measured radiation is from spectral range of tissue optical window (from 600 nm to 1000 nm). Knowledge about the reflectance spectrum of the patient skin allows adjusting spectral and energetic parameters of the radiation used in biostimulation treatment. The developed set also enables the repeatable exposures of patients in the Low Level Laser Therapy procedures.

  4. Conjugated polymers and their use in optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio


    The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  5. WDM module research within the Canadian Solid State Optoelectronics Consortium (United States)

    Fallahi, Mahmoud; Koteles, Emil S.; Delage, Andre; Chatenoud, F.; Templeton, Ian M.; Champion, Garth; He, Jian Jun; Wang, Weijian; Dion, Michael M.; Barber, Richard A.


    We report on the design, growth, fabrication, and characterization of monolithic wavelength division multiplexed (WDM) modules produced within the Canadian Solid State Optoelectronics Consortium. The transmitter module includes multiple, discrete wavelength, distributed Bragg reflector (DBR) laser diodes monolithically integrated with waveguide combiners fabricated using an InGaAs/GaAs heterostructure. The wavelength demultiplexer unit is based on a Rowland circle grating spectrometer monolithically integrated with a metal- semiconductor-metal (MSM) detector array fabricated on an InGaAs/AlGaAs/GaAs heterostructure. The epitaxial layer wafers for both transmitter and receiver modules were grown in single molecular beam epitaxy (MBE) runs.

  6. Neuromorphic opto-electronic integrated circuits for optical signal processing (United States)

    Romeira, B.; Javaloyes, J.; Balle, S.; Piro, O.; Avó, R.; Figueiredo, J. M. L.


    The ability to produce narrow optical pulses has been extensively investigated in laser systems with promising applications in photonics such as clock recovery, pulse reshaping, and recently in photonics artificial neural networks using spiking signal processing. Here, we investigate a neuromorphic opto-electronic integrated circuit (NOEIC) comprising a semiconductor laser driven by a resonant tunneling diode (RTD) photo-detector operating at telecommunication (1550 nm) wavelengths capable of excitable spiking signal generation in response to optical and electrical control signals. The RTD-NOEIC mimics biologically inspired neuronal phenomena and possesses high-speed response and potential for monolithic integration for optical signal processing applications.

  7. Preparation for Ultra High Pure Indium Metal for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Shashwat V. Joshi


    Full Text Available Ultra high pure Indium metal is extensively used in optoelectronic devices. Indium and its alloys become potential candidates in aerospace, defense and communication sectors. Purification of Indium has been done by Instrolec-200 Refiner followed by Directional Melting/ Freezing and Solidification Systems. Major targeted impurities are Metallic impurities Ag, Al, As, Bi, Ca, Cu, Fe, Ga, Ge, Mg, Pb, Sb, Si, Sn, and Zn. Purified Indium is characterized by analytical techniques Inductively Coupled Plasma- Optical Emission Spectrophotometry and Inductively Coupled Plasma- Mass Spectrometry.

  8. Quantum dot rolled-up microtube optoelectronic integrated circuit. (United States)

    Bhowmick, Sishir; Frost, Thomas; Bhattacharya, Pallab


    A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.

  9. Optoelectronics, a global telecom carrier’s perspective

    CERN Document Server

    Batten, J


    This paper summarises the current approaches to high speed optical transmission design. Cable & Wireless operates a large global optical transmission network, with the main purpose of serving the bandwidth market and of providing connectivity for its Internet Protocol data networks. In long haul spans, dense wavelength division multiplexed systems with aggregate capacities of 1 Tbit/s per fibre are deployed. The increase in bandwidth requirement is driving the need for more complex technologies that deliver a jump in system capacity. Emerging optoelectronic technologies are discussed, with particular focus on 40 Gb/s per wavelength transmission and optical wavelength switching.

  10. Manipulation of microparticles and red blood cells using optoelectronic tweezers

    Indian Academy of Sciences (India)

    R S Verma; R Dasgupta; N Kumar; S Ahlawat; A Uppal; P K Gupta


    We report the development of an optoelectronic tweezers set-up which works by lightinduced dielectrophoresis mechanism to manipulate microparticles. We used thermal evaporation technique for coating the organic polymer, titanium oxide phthalocyanine (TiOPc), as a photoconductive layer on ITO-coated glass slide. Compare to the conventional optical tweezers, the technique requires optical power in W range and provides a manipulation area of a few mm2. The set-up was used to manipulate the polystyrene microspheres and red blood cells (RBCs). The RBCs could be attracted or repelled by varying the frequency of the applied AC bias.

  11. Optoelectronic analysis of multijunction wire array solar cells



    Wire arrays have demonstrated promising photovoltaic performance as single junction solar cells and are well suited to defect mitigation in heteroepitaxy. These attributes can combine in tandem wire array solar cells, potentially leading to high efficiencies. Here, we demonstrate initial growths of GaAs on Si_(0.9)Ge_(0.1) structures and investigate III-V on Si_(1-x)Ge_x device design with an analytical model and optoelectronic simulations. We consider Si_(0.1)Ge_(0.9) wires coated with a GaA...

  12. UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study

    KAUST Repository

    Ziani, Ahmed


    We report a combined experimental and theoretical study on the optoelectronic properties of α-SnWO4 for UV-Vis excitation. The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the HSE06 functional. The α-SnWO4 material shows an indirect bandgap of 1.52 eV with high absorption coefficient in the visible-light range (>2 × 105 cm−1). The results show relatively high dielectric constant (>30) and weak diffusion properties (large effective masses) of excited carriers.

  13. Study of liquid transparent encapsulants for the packaging of light emitting diode and other optoelectronic devices (United States)

    Zhou, Yan

    Optically transparent polymeric materials required for the encapsulation of optoelectronic chips are critical to the manufacturability, cost, performance, and reliability of LED and other optoelectronic devices. This work is focused on the development of the transparent epoxy based liquid encapsulants with the objective to enhance the manufacturability, to reduce the cost, and to improve both the performance and the reliability of the packaged optoelectronic devices. First, three transparent encapsulants based on different chemistries were reviewed and their properties compared. These encapsulant systems serve as models of different epoxy chemistries suitable for LED applications. The experimental result gives an overview of the characteristics of each system and guides the further development of the encapsulant for different packaging needs. Then, two new encapsulants were developed and introduced. The first one was a two-component encapsulant based on DGEBA/MHHPA chemistry, but provides lower internal stress, better transmission retention upon thermal aging, and easier processing compared with the current best performer based on the same chemistry. The second one is a novel one-component, low temperature and fast cure encapsulant with a high refractive index of 1.6. This encapsulant provides not only the easy handling, convenient storage, and energy saving, but also higher light output for the packaged LED devices. The third part of this work deals with nanocomposites based on aromatic epoxy and cycloaliphatic epoxy. It was found that these composites provide lower CTE, better toughness, and other advantages while keeping good transparency, therefore are suitable for LED applications. Toughening is another topic studied. Three toughened transparent encapsulants were introduced and compared. The toughening agents selected effectively increased the toughness of the cycloaliphatic epoxy/MHHPA system with minimum negative effect on the transmission of the

  14. Tunable Interface Non-linear Electron Transport in Semiconductor Nanowire Heterostructure and Its Application in Optoelectronics (United States)

    Chen, Guannan

    heterostructure interface is inevitable to understand electronic and optoelectronic properties where real space transfer is involved. We used a combined photocurrent and photoluminescence spectroscopic study, in GaAs/AlxGa1-xAs and GaAs/AlAs core-shell nanowire systems, to construct a band diagram of an individual heterostructure nanowire with high spectral resolution, enabling quantification of conduction band offsets. The thesis outlines a promising novel device paradigm with a well-studied carrier transport physics at heterostructure nanowires, which can be further extended to a broad range of semiconductor material systems.

  15. Exotic optoelectronic properties of organic semiconductors with super-controlled nanoscale sizes and molecular shapes. (United States)

    Hotta, Shu; Yamao, Takeshi; Katagiri, Toshifumi


    We present several aspects of thiophene/phenylene co-oligomers (TPCOs). TPCOs are regarded as a newly occurring class of organic semiconductors. These materials are synthesized by hybridizing thiophene and phenylene rings at the molecular level with their various mutual arrangements. These materials are characterized by the super-controlled nanoscale sizes and molecular shapes. These produce peculiar crystallographic structures and high-performance optical and electronic properties. The crystals of TPCOs were obtained through both vapor phase and liquid phase. In the TPCO crystals, the molecules take upright configuration. These cause large carrier mobilities of field-effect transistors and laser oscillations under optical excitations. Spectrally-narrowed emissions (SNEs) were also achieved under weak optical excitation using a mercury lamp. The light-emitting field-effect transistors using these crystals for an active layer have shown the current-injected SNEs when the device was combined with an optical cavity and operated by an alternating-current gate-voltage method. Thus the TPCO materials will play an important role in the future in the fields of nanoscale technology and organic semiconductor materials as well as their optoelectronic device applications.

  16. Polymer-silicon nanosheet composites: bridging the way to optoelectronic applications (United States)

    Lyuleeva, Alina; Helbich, Tobias; Rieger, Bernhard; Lugli, Paolo


    The fabrication of electronic devices from sensitive, functional, two-dimensional (2D) nanomaterials with anisotropic structural properties has attracted much attention. Many theoretical and experimental studies have been performed; however, such materials have not been used in applications. In this context, the focus has shifted toward the study and synthesis of new materials. Freestanding hydrogen-terminated silicon nanosheets (SiNSs) are a new class of material with outstanding (opto)electronic properties (e.g. photoluminescence at approximately 510 nm) (Nakano 2014 J. Ceram. Soc. Japan 122 748). SiNSs are promising candidates for use in nanoelectronic devices and flexible electronics. Additional reasons for interest in such nanomaterials are their structural anisotropy and the fact that they are made from silicon. Here, we present examples for the application of functionalized SiNS-based composites as active materials for photonic sensors. The implementation of SiNSs in a covalent nanocomposite not only improves their stability but also facilitates subsequent device fabrication. Thus, SiNSs can be used in a straightforward setup preparation procedure. We show that the modification of novel Si-based 2D nanosheets with selected organic components not only opens a new field of photosensitive applications but also improves the processability of these nanosheets (Niu et al 2014 Sci. Rep. 4 4810, Chimene et al 2015 Adv. Mater. 27 7261).

  17. Synthesis of thin films and materials utilizing a gaseous catalyst (United States)

    Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard


    A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

  18. Optoelectronic leak detection system for monitoring subsea structures (United States)

    Moodie, D.,; Costello, L.; McStay, D.


    Leak detection and monitoring on subsea structures is an area of increasing interest for the detection and monitoring of production and control fluids for the oil and gas industry. Current techniques such as capacitive (dielectric) based measurement or passive acoustic systems have limitations and we report here an optoelectronic solution based upon fluorescence spectroscopy to provide a permanent monitoring solution. We report here a new class of optoelectronic subsea sensor for permanent, real time monitoring of hydrocarbon production systems. The system is capable of detecting small leaks of production or hydraulic fluid (ppm levels) over distances of 4-5 meters in a subsea environment. Ideally systems designed for such applications should be capable of working at depths of up to 3000m unattended for periods of 20+ years. The system uses advanced single emitter LED technology to meet the challenges of lifetime, power consumption, spatial coverage and delivery of a cost effective solution. The system is designed for permanent deployment on Christmas tree (XT), subsea processing systems (SPS) and associated equipment to provide enhanced leak detection capability.

  19. Enhanced fabrication process of zinc oxide nanowires for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    García Núñez, C., E-mail: [Grupo de Electrónica y Semiconductores, Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Pau, J.L.; Ruíz, E.; García Marín, A.; García, B.J.; Piqueras, J. [Grupo de Electrónica y Semiconductores, Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Shen, G.; Wilbert, D.S.; Kim, S.M.; Kung, P. [Department of Electrical and Computer Engineering, the University of Alabama, Tuscaloosa, AL 35487 (United States)


    Zinc oxide (ZnO) nanowires (NWs) based ultraviolet (UV) sensors have been fabricated using different assembly techniques to form functional structures, aiming at the improvement of the performance of NW-based sensors for optoelectronic applications. NWs with diameters and lengths varying between 90–870 nm and 2–20 μm, respectively, were synthesized by controlling the growth conditions in a chemical vapor transport system. Optical properties of NWs were studied by means of transmission spectroscopy. Electrical properties of single ZnO NW-based sensors were analyzed in dark and under UV illumination (at photon wavelength of λ < 370 nm) as a function of the NW diameter. Results of the study indicate that reduction of the NW diameter below 200 nm leads to an improvement of the photocurrent (at λ < 370 nm) up to 10{sup 2} μA and a decrease of the decay time around 150 s. These enhancements may help to improve the performance of ZnO-based optoelectronic devices. - Highlights: • ZnO nanowires (NWs) with diameters 90–870 nm were grown by chemical vapor transport. • ZnO NWs showed strong absorption in the UV range. • Different assembly techniques were tested for preparing ZnO NW-based UV sensors. • Sensor photoresponses were around 10{sup 3} A/W. • Reducing NW diameter below 200 nm improved sensor photosensitivity.

  20. Ultrasensitive optoelectronic sensors for nitrogen oxides and explosives detection (United States)

    Wojtas, J.; Bielecki, Z.; Stacewicz, T.; Mikolajczyk, J.


    The article describes application of cavity enhanced absorption spectroscopy (CEAS) for detection of nitrogen oxides and vapours of explosives. The oxides are important greenhouse gases that are of large influence on environment, living organisms and human health. These compounds are also markers of some human diseases as well as they are emitted by commonly used explosives. Therefore sensitive nitrogen oxides sensors are of great importance for many applications, e. g. for environment protection (air monitoring), for medicine investigation (analyzing of exhaled air) and finally for explosives detection. In the Institute of Optoelectronics MUT different types of optoelectronic sensors employing CEAS were developed. They were designed to measure trace concentration of nitrogen dioxide, nitric oxide, and nitrous oxide. The sensors provide opportunity for simultaneous measurement of these gases concentration at ppb level. Their sensitivity is comparable with sensitivities of instruments based on other methods, e.g. gas chromatography or mass spectrometry. Our sensors were used for some explosives detection as well. The experiment showed that the sensors provide possibility to detect explosive devices consisting of nitroglycerine, ammonium nitrate, TNT, PETN, RDX and HMX.

  1. Optoelectronic scanning system upgrade by energy center localization methods (United States)

    Flores-Fuentes, W.; Sergiyenko, O.; Rodriguez-Quiñonez, J. C.; Rivas-López, M.; Hernández-Balbuena, D.; Básaca-Preciado, L. C.; Lindner, L.; González-Navarro, F. F.


    A problem of upgrading an optoelectronic scanning system with digital post-processing of the signal based on adequate methods of energy center localization is considered. An improved dynamic triangulation analysis technique is proposed by an example of industrial infrastructure damage detection. A modification of our previously published method aimed at searching for the energy center of an optoelectronic signal is described. Application of the artificial intelligence algorithm of compensation for the error of determining the angular coordinate in calculating the spatial coordinate through dynamic triangulation is demonstrated. Five energy center localization methods are developed and tested to select the best method. After implementation of these methods, digital compensation for the measurement error, and statistical data analysis, a non-parametric behavior of the data is identified. The Wilcoxon signed rank test is applied to improve the result further. For optical scanning systems, it is necessary to detect a light emitter mounted on the infrastructure being investigated to calculate its spatial coordinate by the energy center localization method.

  2. Impact of optical antennas on active optoelectronic devices. (United States)

    Bonakdar, Alireza; Mohseni, Hooman


    Remarkable progress has been made in the fabrication and characterization of optical antennas that are integrated with optoelectronic devices. Herein, we describe the fundamental reasons for and experimental evidence of the dramatic improvements that can be achieved by enhancing the light-matter interaction via an optical antenna in both photon-emitting and -detecting devices. In addition, integration of optical antennas with optoelectronic devices can lead to the realization of highly compact multifunctional platforms for future integrated photonics, such as low-cost lab-on-chip systems. In this review paper, we further focus on the effect of optical antennas on the detectivity of infrared photodetectors. One particular finding is that the antenna can have a dual effect on the specific detectivity, while it can elevate light absorption efficiency of sub-wavelength detectors, it can potentially increase the noise of the detectors due to the enhanced spontaneous emission rate. In particular, we predict that the detectivity of interband photon detectors can be negatively affected by the presence of optical antennas across a wide wavelength region covering visible to long wavelength infrared bands. In contrast, the detectivity of intersubband detectors could be generally improved with a properly designed optical antenna.

  3. Microfluidic optoelectronic sensor for salivary diagnostics of stomach cancer. (United States)

    Zilberman, Yael; Sonkusale, Sameer R


    We present a microfluidic optoelectronic sensor for saliva diagnostics with a potential application for non-invasive early diagnosis of stomach cancer. Stomach cancer is the second most common cause of cancer-related deaths in the world. The primary identified cause is infection by a gram-negative bacterium Helicobacter pylori. These bacteria secrete the enzyme urease that converts urea into carbon dioxide (CO2) and ammonia (NH3), leading to their elevated levels in breath and body fluids. The proposed optoelectronic sensor will detect clinically relevant levels of CO2 and NH3 in saliva that can potentially be used for early diagnosis of stomach cancer. The sensor is composed of the embedded in a microfluidic device array of microwells filled with ion-exchange polymer microbeads doped with various organic dyes. The optical response of this unique highly diverse sensor is monitored over a broad spectrum, which provides a platform for cross-reactive sensitivity and allows detection of CO2 and NH3 in saliva at ppm levels.

  4. Development of an optoelectronic holographic platform for otolaryngology applications (United States)

    Harrington, Ellery; Dobrev, Ivo; Bapat, Nikhil; Flores, Jorge Mauricio; Furlong, Cosme; Rosowski, John; Cheng, Jeffery Tao; Scarpino, Chris; Ravicz, Michael


    In this paper, we present advances on our development of an optoelectronic holographic computing platform with the ability to quantitatively measure full-field-of-view nanometer-scale movements of the tympanic membrane (TM). These measurements can facilitate otologists' ability to study and diagnose hearing disorders in humans. The holographic platform consists of a laser delivery system and an otoscope. The control software, called LaserView, is written in Visual C++ and handles communication and synchronization between hardware components. It provides a user-friendly interface to allow viewing of holographic images with several tools to automate holography-related tasks and facilitate hardware communication. The software uses a series of concurrent threads to acquire images, control the hardware, and display quantitative holographic data at video rates and in two modes of operation: optoelectronic holography and lensless digital holography. The holographic platform has been used to perform experiments on several live and post-mortem specimens, and is to be deployed in a medical research environment with future developments leading to its eventual clinical use.

  5. Coupled Optoelectronic Oscillators:. Application to Low-Jitter Pulse Generation (United States)

    Yu, N.; Tu, M.; Maleki, L.


    Actively mode-locked Erbium-doped fiber lasers (EDFL) have been studied for generating stable ultra-fast pulses ( 5 GHz) [1,2]. These devices can be compact and environmentally stable, quite suitable for fiber-based high-data-rate communications and optical ultra-fast analog-to-digital conversions (ADC) [3]. The pulse-to-pulse jitter of an EDFL-based pulse generator will be ultimately limited by the phase noise of the mode-locking microwave source (typically electronic frequency synthesizers). On the other hand, opto-electronic oscillators (OEO) using fibers have been demonstrated to generate ultra-low phase noise microwaves at 10 GHz and higher [4]. The overall phase noise of an OEO can be much lower than commercially available synthesizers at the offset-frequency range above 100 Hz. Clearly, ultra-low jitter pulses can be generated by taking advantage of the low phase noise of OEOs. In this paper, we report the progress in developing a new low-jitter pulse generator by combing the two technologies. In our approach, the optical oscillator (mode-locked EDFL) and the microwave oscillator (OEO) are coupled through a common Mach-Zehnder (MZ) modulator, thus named coupled opto-electronic oscillator (COEO) [5]. Based on the results of previous OEO study, we can expect a 10 GHz pulse train with jitters less than 10 fs.

  6. Optoelectronic polarimeter controlled by a graphical user interface of Matlab (United States)

    Vilardy, J. M.; Jimenez, C. J.; Torres, R.


    We show the design and implementation of an optical polarimeter using electronic control. The polarimeter has a software with a graphical user interface (GUI) that controls the optoelectronic setup and captures the optical intensity measurement, and finally, this software evaluates the Stokes vector of a state of polarization (SOP) by means of the synchronous detection of optical waves. The proposed optoelectronic polarimeter can determine the Stokes vector of a SOP in a rapid and efficient way. Using the polarimeter proposed in this paper, the students will be able to observe (in an optical bench) and understand the different interactions of the SOP when the optical waves pass through to the linear polarizers and retarder waves plates. The polarimeter prototype could be used as a main tool for the students in order to learn the theory and experimental aspects of the SOP for optical waves via the Stokes vector measurement. The proposed polarimeter controlled by a GUI of Matlab is more attractive and suitable to teach and to learn the polarization of optical waves.

  7. Optoelectronic method for detection of cervical intraepithelial neoplasia and cervical cancer (United States)

    Pruski, D.; Przybylski, M.; Kędzia, W.; Kędzia, H.; Jagielska-Pruska, J.; Spaczyński, M.


    The optoelectronic method is one of the most promising concepts of biophysical program of the diagnostics of CIN and cervical cancer. Objectives of the work are evaluation of sensitivity and specificity of the optoelectronic method in the detection of CIN and cervical cancer. The paper shows correlation between the pNOR number and sensitivity/specificity of the optoelectronic method. The study included 293 patients with abnormal cervical cytology result and the following examinations: examination with the use of the optoelectronic method — Truscreen, colposcopic examination, and histopathologic biopsy. Specificity of the optoelectronic method for LGSIL was estimated at 65.70%, for HGSIL and squamous cell carcinoma of cervix amounted to 90.38%. Specificity of the optoelectronic method used to confirm lack of cervical pathology was estimated at 78.89%. The field under the ROC curve for the optoelectronic method was estimated at 0.88 (95% CI, 0.84-0.92) which shows high diagnostic value of the test in the detection of HGSIL and squamous cell carcinoma. The optoelectronic method is characterised by high usefulness in the detection of CIN, present in the squamous epithelium and squamous cell carcinoma of cervix.

  8. Quantum Dot Superlattice Enabled Rational Design in Optoelectronics and Hydrogen Generation (United States)


    Final 3. DATES COVERED (From - To) 22-April-2013 to 21-April-2014 4. TITLE AND SUBTITLE Quantum Dot Superlattice Enabled Rational Design...15. SUBJECT TERMS Quantum Dots , Optoelectronic Applications, Charge Transfer, Superlattices, Density Functional Theory, Coupling...FA2386-13-1-4074 “ Quantum Dot Superlattice Enabled Rational Design in Optoelectronics and Hydrogen Generation” April 21, 2014 PI and Co-PI

  9. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong


    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...

  10. 78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... (United States)


    ... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... complaint filed by Avago Technologies Fiber IP (Singapore) Pte. Ltd. of Singapore (``Avago Fiber IP... importation, or sale within the United States after importation of certain optoelectronic devices for...

  11. (Nanotechnology Initiative) Revision of Quantum Engineering of Nanostructures for Optoelectronic Devices with Optimum Performance (United States)


    Colloidal Quantum Dots (QDs) in Optoelectronic Devices --- Solar Cells ...Li, Vaishnavi Narayanamurthy, Kitt Reinhardt, and Michael A. Stroscio, Colloidal Quantum Dots (QDs) in Optoelectronic Devices --- Solar Cells ...Mitra Dutta, and Michael A. Stroscio, Photodetector Based on GaN Double-Barrier Resonant Tunneling Diode Coupled with Colloidal Quantum Dots ,

  12. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong


    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...

  13. Materials (United States)

    Glaessgen, Edward H.; Schoeppner, Gregory A.


    NASA Langley Research Center has successfully developed an electron beam freeform fabrication (EBF3) process, a rapid metal deposition process that works efficiently with a variety of weldable alloys. The EBF3 process can be used to build a complex, unitized part in a layer-additive fashion, although the more immediate payoff is for use as a manufacturing process for adding details to components fabricated from simplified castings and forgings or plate products. The EBF3 process produces structural metallic parts with strengths comparable to that of wrought product forms and has been demonstrated on aluminum, titanium, and nickel-based alloys to date. The EBF3 process introduces metal wire feedstock into a molten pool that is created and sustained using a focused electron beam in a vacuum environment. Operation in a vacuum ensures a clean process environment and eliminates the need for a consumable shield gas. Advanced metal manufacturing methods such as EBF3 are being explored for fabrication and repair of aerospace structures, offering potential for improvements in cost, weight, and performance to enhance mission success for aircraft, launch vehicles, and spacecraft. Near-term applications of the EBF3 process are most likely to be implemented for cost reduction and lead time reduction through addition of details onto simplified preforms (casting or forging). This is particularly attractive for components with protruding details that would require a significantly large volume of material to be machined away from an oversized forging, offering significant reductions to the buy-to-fly ratio. Future far-term applications promise improved structural efficiency through reduced weight and improved performance by exploiting the layer-additive nature of the EBF3 process to fabricate tailored unitized structures with functionally graded microstructures and compositions.

  14. Fiscal 1997 R and D project on industrial science technology under consignment from NEDO. Report on the R and D of nonlinear optoelectronic materials; 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo Shin energy Sangyo Gijutsu Sogo Kaihatsu Kiko itaku. Hisenkei hikari denshi zairyo no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)



    As to the development of organic base materials, the paper is going ahead with an evaluation, higher performance and further use as materials of basic optical properties of quirale nonlinear materials and organic conjugate base materials which are promising among organic low molecular materials. As the development of orientation control crystal growth technology, grooves for orientation control were formed on the surface of the lead glass substrate, from which thin film single crystals were obtained. The nonlinear response was studied of the glass where semiconducting fine particles dispersed in matrix glass. Glass scattering base prototype materials were selected by the sol-gel method and ultra-low melting-point glass method. The glass dispersion base materials by the very fast cooling method was also studied. For the purpose of realizing a high speed switching characteristic, a processing technology was developed of ultra fine particle dispersing polymer light waveguide. As to the technology for super lattice, the optimum nonlinear performance materials were selected mainly with the optimum complex super lattice base. Moreover, the three-dimensional super structuring technology was constructed to improve nonlinear optical characteristics. The comprehensive investigational study was conducted for effective promotion of the research development. 177 refs., 260 figs., 27 tabs.

  15. Structural and optoelectronic properties of the zinc titanate perovskite and spinel by modified Becke–Johnson potential

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Zahid, E-mail: [Materials Modeling Center, Department of Physics, University of Malakand, Chakdara (Pakistan); Ali, Sajad [Materials Modeling Center, Department of Physics, University of Malakand, Chakdara (Pakistan); Department of Physics, Abdul Wali Khan University, Mardan (Pakistan); Ahmad, Iftikhar; Khan, Imad [Materials Modeling Center, Department of Physics, University of Malakand, Chakdara (Pakistan); Rahnamaye Aliabad, H.A. [Department of Physics, Hakim Savzevari University, Sabzevar (Iran, Islamic Republic of)


    Structural and electronic properties of the cubic perovskite ZnTiO{sub 3} and spinel Zn{sub 2}TiO{sub 4} are theoretically studied by the modified Becke–Johnson (mBJ) potential within the framework of density functional theory (DFT). The calculated lattice constants are found to be consistent with the experimental results. The electronic band structures of both the materials reveal that ZnTiO{sub 3} is an indirect band gap while Zn{sub 2}TiO{sub 4} is a direct band gap semiconductor. The calculated fundamental band gaps of these compounds are 2.7 eV and 3.18 eV, which are consistent with the experimental band gaps of 2.9 eV and 3.1 eV, respectively. Zn{sub 2}TiO{sub 4} is a wide and direct band gap compound and hence is an attractive material for optoelectronic applications, especially in near ultraviolet (UV) optoelectronics. Keeping in view the importance of Zn{sub 2}TiO{sub 4} in low frequency UV devices its optical properties like dielectric functions, refractive index, reflectivity and energy loss function are also evaluated and discussed in detail.

  16. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices (United States)

    Wanlass, Mark W.; Carapella, Jeffrey J.


    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  17. Optoelectronic investigation of nanodiamond interactions with human blood (United States)

    Ficek, M.; Wróbel, M. S.; Wasowicz, M.; Jedrzejewska-Szczerska, M.


    We present optoelectronic investigation of in vitro interactions of whole human blood with different nanodiamond biomarkers. Plasmo-chemical modifications of detonation nanodiamond particles gives the possibility for controlling their surface for biological applications. Optical investigations reveal the biological activity of nanodiamonds in blood dependent on its surface termination. We compare different types of nanodiamonds: commercial non-modified detonation nanodiamonds, and nanodiamonds modified by MW PACVD method with H2-termination, and chemically modified nanodiamond with O2-termination. The absorption spectra, and optical microscope investigations were conducted. The results indicate haemocompatibility of non-modified detonation nanodiamond as well as modified nanodiamonds, which enables their application for drug delivery, as well as sensing applications.

  18. Regenerative oscillation and four-wave mixing in graphene optoelectronics

    CERN Document Server

    Gu, Tingyi; Yang, Xiaodong; McMillian, James F; van der Zander, Arend; Yu, Min-bing; Lo, Guo-Qiang; Kwong, Dim-Lee; Hone, James; Wong, Chee-Wei


    The unique linear and massless band structure of graphene, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here we report three consecutive first-observations in graphene-silicon hybrid optoelectronic devices: (1) ultralow power resonant optical bistability; (2) self-induced regenerative oscillations; and (3) coherent four-wave mixing, all at a few femtojoule cavity recirculating energies. These observations, in comparison with control measurements with solely monolithic silicon cavities, are enabled only by the dramatically-large and chi(3) nonlinearities in graphene and the large Q/V ratios in wavelength-localized photonic crystal cavities. These results demonstrate the feasibility and versatility of hybrid two-dimensional graphene-silicon nanophotonic devices for next-generation chip-scale ultrafast optical communications, radio-freque...

  19. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.


    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  20. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.


    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  1. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.


    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  2. Three-dimensional integration of VCSEL-based optoelectronics (United States)

    Louderback, Duane A.; Lin, Hung-Cheng; Fish, Melanie A.; Cheng, Julien; Guilfoyle, Peter S.


    A monolithic optoelectronic device structure with the potential to enable VCSEL-based photonic integrated circuits on GaAs is presented. Using integrated diffraction gratings, the device structure enables the optical output of VCSELs to be coupled to an internal horizontal waveguide, while the optical signals in the waveguide are tapped off to resonant cavity detectors. Since horizontal waveguides are used to route the optical signals between devices, the output mirror transmission of the VCSELs can be eliminated, although we have chosen to retain a small amount of transmission in the top DBR to enable on-wafer testing. The design and fabrication of the monolithically integrated structure, including epitaxial regrowth, is discussed and initial device characteristics are presented.

  3. Optoelectronic Properties for Armchair-Edge Graphene Nanoribbons

    Institute of Scientific and Technical Information of China (English)

    PENG Xin-Xiang; LIAO Wen-Hu; ZHOU Guang-Hui


    We study theoretically the electronic and transport property for an armchair-edge graphene nanoribbon (GNR)with 12 and 11 transversal atomic lines, respectively. The GNR is irradiated under an external longitudinal polarized high-frequency electromagnetic field at tow temperatures. Within the framework of linear response theory in the perturbative regime, we examine the joint density of states and the real conductance of the system, It is demonstrated that, by numerical examples, some new photon-assisted intersubband transitions over a certain range of field frequency exist with different selection rules from those of both zigzag-edge GNR and single-walled carbon nanotube. This opto-electron property dependence of armchair-edge GNR on field frequency may be used to detect the high-frequency electromagnetic irradiation.

  4. Transparent electrode of nanoscale metal film for optoelectronic devices (United States)

    Lee, Illhwan; Lee, Jong-Lam


    This paper reviews the principles, impediments, and recent progress in the development of ultrathin flexible Ag electrodes for use in flexible optoelectronic devices. Thin Ag-based electrodes are promising candidates for next-generation flexible transparent electrodes. Thin Ag-based electrodes that have a microcavity structure show the best device performance, but have relatively low optical transmittance (OT) due to reflection and absorption of photons by the thin Ag; this trait causes problems such as spectral narrowing and change of emission color with viewing angle in white organic light-emitting diodes. Thinning the Ag electrode to overcome these problems. This ultrathin Ag electrode has a high OT, while providing comparable sheet resistance similar to indium tin oxide. As the OT of the electrode increases, the cavity is weakened, so the spectral width of the emission and the angular color stability are increased.

  5. Molecular beam epitaxy for high-efficiency nitride optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Heffernan, J.; Kauer, M.; Windle, J.; Hooper, S.E.; Bousquet, V.; Zellweger, C.; Barnes, J.M. [Sharp Laboratories of Europe, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GB (United Kingdom)


    We review the significant progress made in the development of nitride laser diodes by molecular beam epitaxy (MBE). We report on our recent result of room temperature continuous-wave operation of InGaN quantum well laser diodes grown by MBE. Ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous-wave threshold current of 125 mA, corresponding to a threshold current density of 5.7 kA cm{sup -2}. The lasers have a threshold voltage of 8.6 V and a lifetime of several minutes. We outline the further technical challenges associated with demonstrating lifetimes of several thousand hours and present an assessment of the potential of MBE as a growth method for commercial quality nitride optoelectronic devices. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. A nonlinear optoelectronic filter for electronic signal processing (United States)

    Loh, William; Yegnanarayanan, Siva; Ram, Rajeev J.; Juodawlkis, Paul W.


    The conversion of electrical signals into modulated optical waves and back into electrical signals provides the capacity for low-loss radio-frequency (RF) signal transfer over optical fiber. Here, we show that the unique properties of this microwave-photonic link also enable the manipulation of RF signals beyond what is possible in conventional systems. We achieve these capabilities by realizing a novel nonlinear filter, which acts to suppress a stronger RF signal in the presence of a weaker signal independent of their separation in frequency. Using this filter, we demonstrate a relative suppression of 56 dB for a stronger signal having a 1-GHz center frequency, uncovering the presence of otherwise undetectable weaker signals located as close as 3.5 Hz away. The capabilities of the optoelectronic filter break the conventional limits of signal detection, opening up new possibilities for radar and communication systems, and for the field of precision frequency metrology. PMID:24402418

  7. Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback. (United States)

    Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y


    Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

  8. Design and Radiation Assessment of Optoelectronic Transceiver Circuits for ITER

    CERN Document Server

    Leroux, P; Van Uffelen, M; Steyaert, M


    The presented work describes the design and characterization results of different electronic building blocks for a MGy gamma radiation tolerant optoelectronic transceiver aiming at ITER applications. The circuits are implemented using the 70GHz fT SiGe HBT in a 0.35μm BiCMOS technology. A VCSEL driver circuit has been designed and measured up to a TID of 1.6 MGy and up to a bit rate of 622Mbps. No significant degradation is seen in the eye opening of the output signal. On the receiver side, both a 1GHz, 3kΩ transimpedance and a 5GHz Cherry-Hooper amplifier with over 20dB voltage gain have been designed.

  9. Injectable, Cellular-Scale Optoelectronics with Applications for Wireless Optogenetics (United States)

    Kim, Tae-il; McCall, Jordan G.; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R.; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, GunChul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.; Bruchas, Michael R.


    Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, the ability to insert light sources, detectors, sensors, and other components into precise locations of the deep brain yields versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering.

  10. Nanoelectronic devices and measurements toward nanocrystal-based optoelectronics and DNA sequencing with solid-state nanopores (United States)

    Willis, Lauren J.

    Nanoelectronics are critical to exploring nanoscale materials: including nanocrystals, which could revolutionize optoelectronics, and DNA, which could revolutionize medicine. Our suspended silicon nitride membranes combined with electron beam lithography and transmission electron microscopy have been essential to our device fabrication and measurements. Nanocyrstal-based optoelectronics have garnered much interest, and thus new ways of increasing their transport are constantly being researched. We used ligand exchanges to decrease the interparticle spacing of nanocrystal films, which is known to augment transport. Using gaps only a few nanoparticles-wide, we measured transport and found that current could be controlled with annealing, hydrazine treatment, and voltage-sweeping. Annealing destroyed the insulating ligand surrounding each nanocrystal and allowed the particles to move closer. This usually increased the photocurrent, without significantly increasing the dark current. However, this was ineffective on sub-monolayers. Hydrazine was similar, except it replaced the ligand, rather than destroying it, and it was effective on sub-monolayers; however, it caused a large increase in the dark current as well as the photocurrent. Sweeping the voltage overnight could increase or decrease the photocurrent of a sample depending on whether the sample was illuminated or in the dark, corresponding to traps being emptied or filled. In addition to nanocrystals, our devices were used in solution to sense DNA. We fabricated nanelectrodes and nanowires next to nanopores and showed DNA translocations ionically. We also developed methods to make the pores hydrophilic without the use of piranha; we instead used rapid thermal annealing, heated ozone treatments, and oxygen/hydrogen plasmas. While high rates of device failure was a challenge, recommendations for future experiments are presented, including grounding of all equipment and an extreme focus on sample cleanliness. We have

  11. Education kits for fiber optics, optoelectronics, and optical communications (United States)

    Hájek, Martin; Švrček, Miroslav


    Our company MIKROKOM, s.r.o. is engaged for many years in development of education equipment and kits for fiber optics, optoelectronics and optical communications. We would like to inform competitors of conference about results of this long-time development. Requirements on education kits and equipment in a modern and dynamic area as is optical communications and fiber optics are quite difficult. The education kits should to clearly introduce students to given issue - the most important physical principles and technical approaches, but it should to introduce also to new and modern technologies, which are quickly changing and developing. On the other hand should be these tools and kits reasonable for the schools. In our paper we would like to describe possible ways of development of this education kits and equipment and present our results of long-time work, which covers very wide range. On the one hand we developed equipment and kits for clear demonstration of physical effects using plastic optical fibers POF, next we prepare kits with a glass fibers, which are the most used fibers in practice and after as much as the kits, which covers broad range of passive and active elements of the optical networks and systems and which makes possible to create complex optical transmission connection. This kind of systems with using corresponding tools and equipment introduce the students to properties, manipulation, measurement and usage of optical fibers, traces and many active and passive components. Furthermore, with using different sorts of optical sources, photodetectors, fiber optics couplers etc., students can get acquainted with all optoelectronics transmission system, which uses different sorts of signals. Special part will be devoted also to effort mentioned before - to implement modern technologies such as e.g. Wavelength Division Multiplex (WDM) into the education kits. Our presentation will inform auditors about development of mentioned education kits and

  12. Communications with chaotic optoelectronic systems cryptography and multiplexing (United States)

    Rontani, Damien

    With the rapid development of optical communications and the increasing amount of data exchanged, it has become utterly important to provide effective architectures to protect sensitive data. The use of chaotic optoelectronic devices has already demonstrated great potential in terms of additional computational security at the physical layer of the optical network. However, the determination of the security level and the lack of a multi-user framework are two hurdles which have prevented their deployment on a large scale. In this thesis, we propose to address these two issues. First, we investigate the security of a widely used chaotic generator, the external cavity semiconductor laser (ECSL). This is a time-delay system known for providing complex and high-dimensional chaos, but with a low level of security regarding the identification of its most critical parameter, the time delay. We perform a detailed analysis of the in uence of the ECSL parameters to devise how higher levels of security can be achieved and provide a physical interpretation of their origin. Second, we devise new architectures to multiplex optical chaotic signals and realize multi-user communications at high bit rates. We propose two different approaches exploiting known chaotic optoelectronic devices. The first one uses mutually coupled ECSL and extends typical chaos-based encryption strategies, such as chaos-shift keying (CSK) and chaos modulation (CMo). The second one uses an electro-optical oscillator (EOO) with multiple delayed feedback loops and aims first at transposing coded-division multiple access (CDMA) and then at developing novel strategies of encryption and decryption, when the time-delays of each feedback loop are time-dependent.

  13. Microscopic theory of semiconductor-based optoelectronic devices (United States)

    Iotti, Rita C.; Rossi, Fausto


    Since the seminal paper by Esaki and Tsu, semiconductor-based nanometric heterostructures have been the subject of impressive theoretical and experimental activity due to their high potential impact in both fundamental research and device technology. The steady scaling down of typical space and time scales in quantum optoelectronic systems inevitably leads to a regime in which the validity of the traditional Boltzmann transport theory cannot be taken for granted and a more general quantum-transport description is imperative. In this paper, we shall review state-of-the-art approaches used in the theoretical modelling, design and optimization of optoelectronic quantum devices. The primary goal is to provide a cohesive treatment of basic quantum-transport effects, able to explain and predict the performances of new-generation semiconductor devices. With this aim, we shall review and discuss a fully three-dimensional microscopic treatment of time-dependent as well as steady-state quantum-transport phenomena, based on the density matrix formalism. This will allow us to introduce in a quite natural way the separation between coherent and incoherent processes. Starting with this general theoretical framework, we shall analyse two different types of quantum devices, namely periodically repeated structures and quantum systems with open boundaries. For devices within the first class, we will show how a proper use of periodic boundary conditions allows us to reproduce and predict their current-voltage characteristics without resorting to phenomenological parameters. For the second class of devices, we will address the relevant issue of a quantum treatment of charge transport in systems with open boundaries (electrical contacts) when studying and simulating an at least two-terminal device.

  14. Materials for advanced packaging

    CERN Document Server

    Wong, CP


    Significant progress has been made in advanced packaging in recent years. Several new packaging techniques have been developed and new packaging materials have been introduced. This book provides a comprehensive overview of the recent developments in this industry, particularly in the areas of microelectronics, optoelectronics, digital health, and bio-medical applications. The book discusses established techniques, as well as emerging technologies, in order to provide readers with the most up-to-date developments in advanced packaging.

  15. Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wegele, Tatjana; Beyer, Andreas; Gies, Sebastian; Zimprich, Martin; Heimbrodt, Wolfram; Stolz, Wolfgang; Volz, Kerstin [Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, 35032 Marburg (Germany)


    Ga(NAsP) quantum wells grown pseudomorphically on Si substrate are promising candidates for optically active light sources in future optoelectronically integrated circuits on Si substrates. As the material is typically grown at low temperatures, it has to be thermally annealed after growth to remove defects and optimize optoelectronic properties. Here we show by quantitative transmission electron microscopy that two different kinds of structural development are associated with the annealing. First of all, the quantum well homogeneity improves with increasing annealing temperature. For annealing temperatures above 925 °C the composition becomes less homogeneous again. Second, voids form in the quantum well for annealing temperatures above 850 °C. Their density and size increase continuously with increasing annealing temperature. These results are correlated to the optical properties of the samples, where we find from temperature-dependent photoluminescence measurements two scales of disorder, which show the same temperature dependence as the structural properties.

  16. Optical meta-films of alumina nanowire arrays for solar evaporation and optoelectronic devices (Conference Presentation) (United States)

    Kim, Kyoungsik; Bae, Kyuyoung; Kang, Gumin; Baek, Seunghwa


    Nanowires with metallic or dielectric materials have received considerable interest in many research fields for optical and optoelectronic devices. Metal nanowires have been extensively studied due to the high optical and electrical properties and dielectric nanowires are also investigated owing to the multiple scattering of light. In this research, we report optical meta-films of alumina nanowire arrays with nanometer scale diameters by fabrication method of self-aggregate process. The aluminum oxide nanowires are transparent from ultraviolet to near infrared wavelength regions and array structures have strong diffusive light scattering. We integrate those optical properties from the material and structure, and produce efficient an optical haze meta-film which has high transparency and transmission haze at the same time. The film enhances efficiencies of optical devices by applying on complete products, such as organic solar cells and LEDs, because of an expanded optical path length and light trapping in active layers maintaining high transparency. On the other hands, the meta-film also produces solar steam by sputtering metal on the aluminum oxide nanowire arrays. The nanowire array film with metal coating exhibits ultrabroadband light absorption from ultraviolet to mid-infrared range which is caused by nanofocusing of plasmons. The meta-film efficiently produces water steam under the solar light by metal-coated alumina arrays which have high light-to-heat conversion efficiency. The design, fabrication, and evaluation of our light management platforms and their applications of the meta-films will be introduced.

  17. Combined experimental–theoretical study of the optoelectronic properties of non-stoichiometric pyrochlore bismuth titanate

    KAUST Repository

    Noureldine, Dalal


    A combination of experimental and computational methods was applied to investigate the crystal structure and optoelectronic properties of the non-stoichiometric pyrochlore Bi2−xTi2O7−1.5x. The detailed experimental protocol for both powder and thin-film material synthesis revealed that a non-stoichiometric Bi2−xTi2O7−1.5x structure with an x value of ∼0.25 is the primary product, consistent with the thermodynamic stability of the defect-containing structure computed using density functional theory (DFT). The approach of density functional perturbation theory (DFPT) was used along with the standard GGA PBE functional and the screened Coulomb hybrid HSE06 functional, including spin–orbit coupling, to investigate the electronic structure, the effective electron and hole masses, the dielectric constant, and the absorption coefficient. The calculated values for these properties are in excellent agreement with the measured values, corroborating the overall analysis. This study indicates potential applications of bismuth titanate as a wide-bandgap material, e.g., as a substitute for TiO2 in dye-sensitized solar cells and UV-light-driven photocatalysis.

  18. Integration of conductive reduced graphene oxide into microstructured optical fibres for optoelectronics applications. (United States)

    Ruan, Yinlan; Ding, Liyun; Duan, Jingjing; Ebendorff-Heidepriem, Heike; Monro, Tanya M


    Integration of conductive materials into optical fibres can largely expand functions of fibre devices including surface plasmon resonator/metamaterial, modulators/detectors, or biosensors. Some early attempts have been made to incorporate metals such as tin into fibres during the fibre drawing process. Due to the restricted range of materials that have compatible melting temperatures with that of silica glass, the methods to incorporate metals along the length of the fibres are very challenging. Moreover, metals are nontransparent with strong light absorption, which causes high fibre loss. This article demonstrates a novel but simple method for creating transparent conductive reduced graphene oxide film onto microstructured silica fibres for potential optoelectronic applications. The strongly confined evanescent field of the suspended core fibres with only 2 μW average power was creatively used to transform graphene oxide into reduced graphene oxide with negligible additional loss. Existence of reduced graphene oxide was confirmed by their characteristic Raman signals, shifting of their fluorescence peaks as well as largely decreased resistance of the bulk GO film after laser beam exposure.

  19. Developing high mobility emissive organic semiconductors towards integrated optoelectronic devices (Conference Presentation) (United States)

    Dong, Huanli; Hu, Wenping; Heeger, Alan J.


    The achievement of organic semiconductors with both high mobility and strong fluorescence emission remains a challenge. High mobility requires molecules which pack densely and periodically, while serious fluorescence quenching typically occurs when fluorescent materials begin to aggregate (aggregation-induced quenching (AIQ)). Indeed, classical materials with strong fluorescent emission always exhibit low mobility, for example, tris(8-hydroxyquinoline) aluminium (ALQ) and phenylenevinylene-based polymers with mobility only 10-6-10-5 cm2V-1s-1, and benchmark organic semiconductors with high mobility demonstrate very weak emission, for example, rubrene exhibits a quantum yield 1% in crystalline state and pentacene shows very weak fluorescence in the solid state. However, organic semiconductors with high mobility and strong fluorescence are necessary for the achievement of high efficiency organic light-emitting transistors (OLETs) and electrically pumped organic lasers. Therefore, it is necessary for developing high mobility emissive organic/polymeric semiconductors towards a fast mover for the organic optoelectronic integrated devices and circuits.

  20. Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

    CERN Document Server

    O’Donnell, Kevin


    This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectro...

  1. Synthesis and Characterization of Antimony Telluride for Thermoelectric and Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Zybała R.


    Full Text Available Antimony telluride (Sb2Te3 is an intermetallic compound crystallizing in a hexagonal lattice with R-3m space group. It creates a c lose packed structure of an ABCABC type. As intrinsic semiconductor characterized by excellent electrical properties, Sb2Te3 is widely used as a low-temperature thermoelectric material. At the same time, due to unusual properties (strictly connected with the structure, antimony telluride exhibits nonlinear optical properties, including saturable absorption. Nanostructurization, elemental doping and possibilities of synthesis Sb2Te3 in various forms (polycrystalline, single crystal or thin film are the most promising methods for improving thermoelectric properties of Sb2Te3. Applications of Sb2Te3 in optical devices (e.g. nonlinear modulator, in particular saturable absorbers for ultrafast lasers are also interesting. The antimony telluride in form of bulk polycrystals and layers for thermoelectric and optoelectronic applications respectively were used. For optical applications thin layers of the material were formed and studied. Synthesis and structural characterization of Sb2Te3 were also presented here. The anisotropy (packed structure and its influence on thermoelectric properties have been performed. Furthermore, preparation and characterization of Sb2Te3 thin films for optical uses have been also made.

  2. Optoelectronic characterization of the curing process of thermoset-based composites (United States)

    Cusano, A.; Breglio, G.; Giordano, M.; Calabrò, A.; Cutolo, A.; Nicolais, L.


    In this paper, the optoelectronic characterization of the polymerization process of thermoset-based composites is described. As is well known, in the last decade, these kinds of material in the light of their low weight/mechanical strength ratio have been widely used in many industrial areas such as automotive, aeronautic and aerospace. Because of the dependence of their properties on the manufacturing stage, real-time monitoring of the curing process has been indicated as the key point for improving the quality and reducing manufacturing process costs. In fact, in situ identification of the status of the processed material would allow the implementation of an on-line control of the manufacturing stage, leading to the transformation of the classical process in a real scientific operation. Based on this line of argument, a less-contact optical technique has been used to monitor the refractive index variation of an epoxy-based resin due to the polymerization process. Starting from preliminary experimental results, a fibre optic sensor has been designed and developed in order to perform in situ cure monitoring by refractive index measurement. A theoretical model has been developed and validated by comparison with calorimetric characterization.

  3. Charge carrier dynamics in photovoltaic materials

    NARCIS (Netherlands)

    Jensen, S.A.


    We employ the experimental technique THz Time Domain spectroscopy (THz-TDS) to study the optoelectronic properties of potential photovoltaic materials. This all-optical method is useful for probing photoconductivities in a range of materials on ultrafast timescales without the application of physica

  4. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics. (United States)

    Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A


    We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

  5. Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices †

    KAUST Repository

    Beljonne, David


    We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational techniques used to assess the morphology of organic: organic heterojunctions; we highlight the compromises that are necessary to handle large systems and multiple time scales while preserving the atomistic details required for subsequent computations of the electronic and optical properties. We then review some recent theoretical advances in describing the ground-state electronic structure at heterojunctions between donor and acceptor materials and highlight the role played by charge-transfer and long-range polarization effects. Finally, we discuss the modeling of the excited-state electronic structure at organic:organic interfaces, which is a key aspect in the understanding of the dynamics of photoinduced electron-transfer processes. © 2010 American Chemical Society.

  6. Optical materials and applications

    CERN Document Server

    Wakaki, Moriaki; Kudo, Keiei


    The definition of optical material has expanded in recent years, largely because of IT advances that have led to rapid growth in optoelectronics applications. Helping to explain this evolution, Optical Materials and Applications presents contributions from leading experts who explore the basic concepts of optical materials and the many typical applications in which they are used. An invaluable reference for readers ranging from professionals to technical managers to graduate engineering students, this book covers everything from traditional principles to more cutting-edge topics. It also detai

  7. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz (United States)

    Moustakas, Theodore D.; Paiella, Roberto


    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  8. Organic photoresponse materials and devices. (United States)

    Dong, Huanli; Zhu, Hongfei; Meng, Qing; Gong, Xiong; Hu, Wenping


    Organic photoresponse materials and devices are critically important to organic optoelectronics and energy crises. The activities of photoresponse in organic materials can be summarized in three effects, photoconductive, photovoltaic and optical memory effects. Correspondingly, devices based on the three effects can be divided into (i) photoconductive devices such as photodetectors, photoreceptors, photoswitches and phototransistors, (ii) photovoltaic devices such as organic solar cells, and (iii) optical data storage devices. It is expected that this systematic analysis of photoresponse materials and devices could be a guide for the better understanding of structure-property relationships of organic materials and provide key clues for the fabrication of high performance organic optoelectronic devices, the integration of them in circuits and the application of them in renewable green energy strategies (critical review, 452 references).

  9. Middle infrared optoelectronic absorption systems for monitoring physiological glucose solutions (United States)

    Martin, W. Blake

    Tight monitoring of the glucose levels for diabetic individuals is essential to control long-term complications. A definitive diabetes management system has yet to be developed for the diabetic. This research investigates the application of middle infrared absorption frequencies for monitoring glucose levels in biological solutions. Three frequencies were identified using a Fourier transform infrared spectrometer and correlated to changes in glucose concentrations. The 1035 +/- 1 cm-1 frequency was determined to be the best representative frequency. Other biological molecules contributed no significant interference to monitoring glucose absorption. A second frequency at 1193 cm-1 was suggested as a representative background absorption frequency, which could be used for more accurate glucose absorption values. Next, a quantum cascade laser optoelectronic absorption system was designed and developed to monitor glucose. After careful alignment and design, the system was used to monitor physiological glucose concentrations. Correlation at 1036 cm-1 with glucose changes was comparable to the previous results. The use of the background absorption frequency was verified. This frequency essentially acts as a calibrating frequency to adjust in real-time to any changes in the background absorption that may alter the accuracy of the predicted glucose value. An evanescent wave cavity ring-down spectroscopy technique was explored to monitor molecules in a biological solution. Visible light at 425 nm was used to monitor hemoglobin in control urine samples. An adsorption isotherm for hemoglobin was detectable to limit of 5.8 nM. Evanescent wave cavity ring-down spectroscopy would be useful for a glucose solution. Given an equivalent system designed for the middle infrared, the molar extinction coefficient of glucose allows for a detectable limit of 45 mg/dl for a free-floating glucose solution, which is below normal physiological concentrations. The future use of a hydrophobic

  10. High throughput optoelectronic smart pixel systems using diffractive optics (United States)

    Chen, Chih-Hao


    Recent developments in digital video, multimedia technology and data networks have greatly increased the demand for high bandwidth communication channels and high throughput data processing. Electronics is particularly suited for switching, amplification and logic functions, while optics is more suitable for interconnections and communications with lower energy and crosstalk. In this research, we present the design, testing, integration and demonstration of several optoelectronic smart pixel devices and system architectures. These systems integrate electronic switching/processing capability with parallel optical interconnections to provide high throughput network communication and pipeline data processing. The Smart Pixel Array Cellular Logic processor (SPARCL) is designed in 0.8 m m CMOS and hybrid integrated with Multiple-Quantum-Well (MQW) devices for pipeline image processing. The Smart Pixel Network Interface (SAPIENT) is designed in 0.6 m m GaAs and monolithically integrated with LEDs to implement a highly parallel optical interconnection network. The Translucent Smart Pixel Array (TRANSPAR) design is implemented in two different versions. The first version, TRANSPAR-MQW, is designed in 0.5 m m CMOS and flip-chip integrated with MQW devices to provide 2-D pipeline processing and translucent networking using the Carrier- Sense-MultipleAccess/Collision-Detection (CSMA/CD) protocol. The other version, TRANSPAR-VM, is designed in 1.2 m m CMOS and discretely integrated with VCSEL-MSM (Vertical-Cavity-Surface- Emitting-Laser and Metal-Semiconductor-Metal detectors) chips and driver/receiver chips on a printed circuit board. The TRANSPAR-VM provides an option of using the token ring network protocol in addition to the embedded functions of TRANSPAR-MQW. These optoelectronic smart pixel systems also require micro-optics devices to provide high resolution, high quality optical interconnections and external source arrays. In this research, we describe an innovative

  11. 25th anniversary article: carbon nanotube- and graphene-based transparent conductive films for optoelectronic devices. (United States)

    Du, Jinhong; Pei, Songfeng; Ma, Laipeng; Cheng, Hui-Ming


    Carbon nanotube (CNT)- and graphene (G)-based transparent conductive films (TCFs) are two promising alternatives for commonly-used indium tin oxide-based TCFs for future flexible optoelectronic devices. This review comprehensively summarizes recent progress in the fabrication, properties, modification, patterning, and integration of CNT- and G-TCFs into optoelectronic devices. Their potential applications and challenges in optoelectronic devices, such as organic photovoltaic cells, organic light emitting diodes and touch panels, are discussed in detail. More importantly, their key characteristics and advantages for use in these devices are compared. Despite many challenges, CNT- and G-TCFs have demonstrated great potential in various optoelectronic devices and have already been used for some products like touch panels of smartphones. This illustrates the significant opportunities for the industrial use of CNTs and graphene, and hence pushes nanoscience and nanotechnology one step towards practical applications.

  12. One-dimensional CdS nanostructures: a promising candidate for optoelectronics. (United States)

    Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou


    As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted.

  13. EDFA-based coupled opto-electronic oscillator and its phase noise (United States)

    Salik, Ertan; Yu, Nan; Tu, Meirong; Maleki, Lute


    EDFA-based coupled opto-electronic oscillator (COEO), an integrated optical and microwave oscillator that can generate picosecond optical pulses, is presented. the phase noise measurements of COEO show better performance than synthesizer-driven mode-locked laser.

  14. GaN nano-membrane for optoelectronic and electronic device applications

    KAUST Repository

    Ooi, Boon S.


    The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

  15. Superlight and superflexible three-dimensional semiconductor frameworks A(X≡Y)4 (A=Si, Ge; X/Y=C, B, N) with tunable optoelectronic and mechanical properties from first-principles. (United States)

    Cao, Xinrui; Li, Xiao-Fei; Zhu, Zi-Zhong


    Silicon carbide materials as the leading wide-bandgap semiconductor holds significant importance in semiconductor technologies. Here, diamond-like three-dimensional (3D) materials with low density but high elasticity properties have been designed from first-principles calculations. They are porous single-crystalline materials composed of sp3-hybridized Si (or Ge) and sp-type C≡C (or B≡N) linear moieties, while their stabilities are found to be comparable to the recently prepared SiC4 materials. Moreover, we find that such wide-bandgap semiconductors have strong absorption in a wide range of UV region and exhibit superlight, superflexible, and incompressible mechanical properties, and their optoelectronic and mechanical properties can be well tuned via structural modifications. Such features make them have high potential for practicable application in extreme conditions, and suggest promising applications for the design of UV optoelectronic devices.

  16. Highly Conductive Transparent Organic Electrodes with Multilayer Structures for Rigid and Flexible Optoelectronics


    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan


    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will b...

  17. Integrated Graphene-Based Optoelectronic Devices Used for Ultrafast Optical-THz Photodetectors, Modulators and Emitters (United States)


    AFRL-RV-PS- AFRL-RV-PS- TR-2015-0083 TR-2015-0083 INTEGRATED GRAPHENE -BASED OPTOELECTRONIC DEVICES USED FOR ULTRAFAST OPTICAL-THZ PHOTODETECTORS...From - To) 7 Nov 2011 – 12 Feb 2012 4. TITLE AND SUBTITLE Integrated Graphene -Based Optoelectronic Devices Used for Ultrafast Optical-THz...quasiparticles in graphene electrons, phlasmons and electron-hole pairs with the ultimate goal to convert them into or be extracted from terahertz

  18. Optoelectronics: Continuously Spatial-Wavelength-Tunable Nanowire Lasers on a Single Chip (United States)


    non peer-reviewed journals: Topic 4.2 Optoelectronics : Continuously spatial-wavelength-tunable nanowire lasers on a single chip Report Title Extensive...Nov-2008 30-Apr-2013 Approved for Public Release; Distribution Unlimited Topic 4.2 Optoelectronics : Continuously spatial-wavelength-tunable nanowire... lasers on a single chip The views, opinions and/or findings contained in this report are those of the author(s) and should not contrued as an official

  19. The influence of dopant distribution on the optoelectronic properties of tin-doped indium oxide nanocrystals and nanocrystal films (United States)

    Lounis, Sebastien Dahmane

    Colloidally prepared nanocrystals of transparent conducting oxide (TCO) semiconductors have emerged in the past decade as an exciting new class of plasmonic materials. In recent years, there has been tremendous progress in developing synthetic methods for the growth of these nanocrystals, basic characterization of their properties, and their successful integration into optoelectronic and electrochemical devices. However, many fundamental questions remain about the physics of localized surface plasmon resonance (LSPR) in these materials, and how their optoelectronic properties derive from their underlying structural properties. In particular, the influence of the concentration and distribution of dopant ions and compensating defects on the optoelectronic properties of TCO nanocrystals has seen little investigation. Indium tin oxide (ITO) is the most widely studied and commercially deployed TCO. Herein we investigate the role of the distribution of tin dopants on the optoelectronic properties of colloidally prepared ITO nanocrystals. Owing to a high free electron density, ITO nanocrystals display strong LSPR absorption in the near infrared. Depending on the particular organic ligands used, they are soluble in various solvents and can readily be integrated into densely packed nanocrystal films with high conductivities. Using a combination of spectroscopic techniques, modeling and simulation of the optical properties of the nanocrystals using the Drude model, and transport measurements, it is demonstrated herein that the radial distribution of tin dopants has a strong effect on the optoelectronic properties of ITO nanocrystals. ITO nanocrystals were synthesized in both surface-segregated and uniformly distributed dopant profiles. Temperature dependent measurements of optical absorbance were first combined with Drude modeling to extract the internal electrical properties of the ITO nanocrystals, demonstrating that they are well-behaved degenerately doped semiconductors

  20. An Electronic Structure Approach to Charge Transfer and Transport in Molecular Building Blocks for Organic Optoelectronics (United States)

    Hendrickson, Heidi Phillips

    A fundamental understanding of charge separation in organic materials is necessary for the rational design of optoelectronic devices suited for renewable energy applications and requires a combination of theoretical, computational, and experimental methods. Density functional theory (DFT) and time-dependent (TD)DFT are cost effective ab-initio approaches for calculating fundamental properties of large molecular systems, however conventional DFT methods have been known to fail in accurately characterizing frontier orbital gaps and charge transfer states in molecular systems. In this dissertation, these shortcomings are addressed by implementing an optimally-tuned range-separated hybrid (OT-RSH) functional approach within DFT and TDDFT. The first part of this thesis presents the way in which RSH-DFT addresses the shortcomings in conventional DFT. Environmentally-corrected RSH-DFT frontier orbital energies are shown to correspond to thin film measurements for a set of organic semiconducting molecules. Likewise, the improved RSH-TDDFT description of charge transfer excitations is benchmarked using a model ethene dimer and silsesquioxane molecules. In the second part of this thesis, RSH-DFT is applied to chromophore-functionalized silsesquioxanes, which are currently investigated as candidates for building blocks in optoelectronic applications. RSH-DFT provides insight into the nature of absorptive and emissive states in silsesquioxanes. While absorption primarily involves transitions localized on one chromophore, charge transfer between chromophores and between chromophore and silsesquioxane cage have been identified. The RSH-DFT approach, including a protocol accounting for complex environmental effects on charge transfer energies, was tested and validated against experimental measurements. The third part of this thesis addresses quantum transport through nano-scale junctions. The ability to quantify a molecular junction via spectroscopic methods is crucial to their

  1. Manipulating and assembling metallic beads with Optoelectronic Tweezers (United States)

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M.; Neale, Steven L.


    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10-9 N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction.

  2. Light Management in Optoelectronic Devices with Disordered and Chaotic Structures

    KAUST Repository

    Khan, Yasser


    With experimental realization, energy harvesting capabilities of chaotic microstructures were explored. Incident photons falling into chaotic trajectories resulted in energy buildup for certain frequencies. As a consequence, many fold enhancement in light trapping was observed. These ellipsoid like chaotic microstructures demonstrated 25% enhancement in light trapping at 450nm excitation and 15% enhancement at 550nm excitation. Optimization of these structures can drive novel chaos-assisted energy harvesting systems. In subsequent sections of the thesis, prospect of broadband light extraction from white light emitting diodes were investigated, which is an unchallenged but quintessential problem in solid-state lighting. Size dependent scattering allows microstructures to interact strongly with narrow-band light. If disorder is introduced in spread and sizes of microstructures, broadband light extraction is possible. A novel scheme with Voronoi tessellation to quantify disorder in physical systems was also introduced, and a link between voronoi disorder and state disorder of statistical mechanics was established. Overall, in this thesis some nascent concepts regarding disorder and chaos were investigated to efficiently manage electromagnetic waves in optoelectronic devices.

  3. Technical quality assessment of an optoelectronic system for movement analysis (United States)

    Di Marco, R.; Rossi, S.; Patanè, F.; Cappa, P.


    The Optoelectronic Systems (OS) are largely used in gait analysis to evaluate the motor performances of healthy subjects and patients. The accuracy of marker trajectories reconstruction depends on several aspects: the number of cameras, the dimension and position of the calibration volume, and the chosen calibration procedure. In this paper we propose a methodology to evaluate the effects of the mentioned sources of error on the reconstruction of marker trajectories. The novel contribution of the present work consists in the dimension of the tested calibration volumes, which is comparable with the ones normally used in gait analysis; in addition, to simulate trajectories during clinical gait analysis, we provide non-default paths for markers as inputs. Several calibration procedures are implemented and the same trial is processed with each calibration file, also considering different cameras configurations. The RMSEs between the measured trajectories and the optimal ones are calculated for each comparison. To investigate the significant differences between the computed indices, an ANOVA analysis is implemented. The RMSE is sensible to the variations of the considered calibration volume and the camera configurations and it is always inferior to 43 mm.

  4. Fluorescence particle detection using microfluidics and planar optoelectronic elements (United States)

    Kettlitz, Siegfried W.; Moosmann, Carola; Valouch, Sebastian; Lemmer, Uli


    Detection of fluorescent particles is an integral part of flow cytometry for analysis of selectively stained cells. Established flow cytometer designs achieve great sensitivity and throughput but require bulky and expensive components which prohibit mass production of small single-use point-of-care devices. The use of a combination of innovative technologies such as roll-to-roll printed microuidics with integrated optoelectronic components such as printed organic light emitting diodes and printed organic photodiodes enables tremendous opportunities in cost reduction, miniaturization and new application areas. In order to harvest these benefits, the optical setup requires a redesign to eliminate the need for lenses, dichroic mirrors and lasers. We investigate the influence of geometric parameters on the performance of a thin planar design which uses a high power LED as planar light source and a PIN-photodiode as planar detector. Due to the lack of focusing optics and inferior optical filters, the device sensitivity is not yet on par with commercial state of the art flow cytometer setups. From noise measurements, electronic and optical considerations we deduce possible pathways of improving the device performance. We identify that the sensitivity is either limited by dark noise for very short apertures or by noise from background light for long apertures. We calculate the corresponding crossover length. For the device design we conclude that a low device thickness, low particle velocity and short aperture length are necessary to obtain optimal sensitivity.

  5. Solution processed semiconductor alloy nanowire arrays for optoelectronic applications (United States)

    Shimpi, Paresh R.

    In this dissertation, we use ZnO nanowire as a model system to investigate the potential of solution routes for bandgap engineering in semiconductor nanowires. Excitingly, successful Mg-alloying into ZnO nanowire arrays has been achieved using a two-step sequential hydrothermal method at low temperature (green-yellow-red band (˜400-660 nm) increased whereas intensity of NBE UV peak decreased and completely got quenched. This might be due to interface diffusion of oxidized Si (SiOx) and formation of (Zn,Mg)1.7SiO4 epitaxially overcoated around individual ZnMgO nanowire. On the other hand, ambient annealed ZnMgO nanowires grown on quartz showed a ˜6-10 nm blue-shift in NBE UV emission, indicating significantly enhanced inter-diffusion of Mg into ZnO nanowires in this oxygen-rich environment. The successfully developed solution process for semiconductor nanowires alloying has few advantages in low cost, large yield, environmental friendliness and low reaction temperature. This solution processed ZnMgO nanowire arrays could provide a new class of nanoscale building blocks for various optoelectronic devices in UV lighting and visible solar energy harvesting.

  6. A nanomesh scaffold for supramolecular nanowire optoelectronic devices (United States)

    Zhang, Lei; Zhong, Xiaolan; Pavlica, Egon; Li, Songlin; Klekachev, Alexander; Bratina, Gvido; Ebbesen, Thomas W.; Orgiu, Emanuele; Samorì, Paolo


    Supramolecular organic nanowires are ideal nanostructures for optoelectronics because they exhibit both efficient exciton generation as a result of their high absorption coefficient and remarkable light sensitivity due to the low number of grain boundaries and high surface-to-volume ratio. To harvest photocurrent directly from supramolecular nanowires it is necessary to wire them up with nanoelectrodes that possess different work functions. However, devising strategies that can connect multiple nanowires at the same time has been challenging. Here, we report a general approach to simultaneously integrate hundreds of supramolecular nanowires of N,N‧-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) in a hexagonal nanomesh scaffold with asymmetric nanoelectrodes. Optimized PTCDI-C8 nanowire photovoltaic devices exhibit a signal-to-noise ratio approaching 107, a photoresponse time as fast as 10 ns and an external quantum efficiency >55%. This nanomesh scaffold can also be used to investigate the fundamental mechanism of photoelectrical conversion in other low-dimensional semiconducting nanostructures.

  7. Investigation of electrical and optoelectronic properties of zinc oxide nanowires (United States)

    Zhang, D.; Lee, S. K.; Chava, S.; Berven, C. A.; Katkanant, V.


    Zinc oxide (ZnO) nanowires have been synthesized by using tubular furnace chemical vapor deposition technique. The morphology, chemical composition and crystal structure of as-synthesized ZnO nanowires were examined by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) techniques. Four-terminal current-voltage ( I- V) measurements were employed to study the electrical conductance of ZnO nanowires under various testing gas environments for gas sensing purpose. The I- V curves at temperature ranging from 150 to 300 K were recorded in the testing chamber under vacuum. The Arrhenius plot shows perfect linear relationship between the logarithm of the current I and inverse temperature 1/ T. The donor level of the semiconducting nanowires is about 326 meV. The I- V behaviors were found to be reversible and repeatable with testing gases. The electrical conductivity was enhanced by a factor of four with ambient CO gas compared to that in vacuum and other testing gases. The optoelectronic properties of the ZnO nanowires were obtained by two-terminal I- V measurement method while the nanowires were illuminated by a ruby laser. The electrical conductivity was increased by 60% when the laser was present in comparison to that when the laser was off. Those significant changes suggest that nano-devices constructed by the ZnO nanowires could be used in gas sensing and optical switching applications.

  8. Radiation-hard optoelectronic data readout for the ATLAS SCT

    CERN Document Server

    Troska, Jan K; Gregor, I M; Homer, R James; Jovanovic, P; Mahout, G; Mandic, I; Wastie, R L; Weidberg, A R; White, D J


    The ATLAS experiment is currently in the final pre-production design phase to allow timely installation at the CERN Large Hadron Collider in 2005. The sub-systems closest to the interaction point the tracking detectors, will be subject to significant total radiation dose at high flux. Optical data transmission has been chosen for the Pixel and SemiConductor Tracker to both deliver timing and control information to the detector modules and transmit tracking data to the remote counting room. Of considerable concern is the radiation hardness, both transient and total dose, of not just the optoelectronic components but also the driver/receiver electronics. In this paper we report on total dose radiation testing of the VCSEL driver and photodiode receiver ASICs designed using a range of techniques in a nominally radiation-soft process. Both ASICs will be shown to be tolerant to a total gamma dose of 100 kGy and a total neutron fluence (1 MeV equiv.) of 2*10/sup 14/ n/cm/sup 2/, as required for this system. Single-...

  9. Optoelectronic plethysmography compared to spirometry during maximal exercise. (United States)

    Layton, Aimee M; Moran, Sienna L; Garber, Carol Ewing; Armstrong, Hilary F; Basner, Robert C; Thomashow, Byron M; Bartels, Matthew N


    The purpose of this study was to compare simultaneous measurements of tidal volume (Vt) by optoelectronic plethysmography (OEP) and spirometry during a maximal cycling exercise test to quantify possible differences between methods. Vt measured simultaneously by OEP and spirometry was collected during a maximal exercise test in thirty healthy participants. The two methods were compared by linear regression and Bland-Altman analysis at submaximal and maximal exercise. The average difference between the two methods and the mean percentage discrepancy were calculated. Submaximal exercise (SM) and maximal exercise (M) Vt measured by OEP and spirometry had very good correlation, SM R=0.963 (pspirometry. OEP could measure exercise Vt as much as 0.188 L above and -0.017 L below that of spirometry. The discrepancy between measurements was -2.0 ± 7.2% at SM and -2.4 ± 3.9% at M. In conclusion, Vt measurements at during exercise by OEP and spirometry are closely correlated and the difference between measurements was insignificant.

  10. Multilevel organization in hybrid thin films for optoelectronic applications. (United States)

    Vohra, Varun; Bolognesi, Alberto; Calzaferri, Gion; Botta, Chiara


    In this work we report two simple approaches to prepare hybrid thin films displaying a high concentration of zeolite crystals that could be used as active layers in optoelectronic devices. In the first approach, in order to organize nanodimensional zeolite crystals of 40 nm diameter in an electroactive environment, we chemically modify their external surface and play on the hydrophilic/hydrophobic forces. We obtain inorganic nanocrystals that self-organize in honeycomb electroluminescent polymer structures obtained by breath figure formation. The different functionalizations of the zeolite surface result in different organizations inside the cavities of the polymeric structure. The second approach involving soft-litography techniques allows one to arrange single dye-loaded zeolite L crystals of 800 nm of length by mechanical loading into the nanocavities of a conjugated polymer. Both techniques result in the formation of thin hybrid films displaying three levels of organization: organization of the dye molecules inside the zeolite nanochannels, organization of the zeolite crystals inside the polymer cavities, and micro- or nanostructuration of the polymer.

  11. Radiation-hard Optoelectronics for LHC detector upgrades.

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00375195; Newbold, Dave

    A series of upgrades foreseen for the LHC over the next decade will allow the proton-proton collisions to reach the design center of mass energy of 14 TeV and increase the luminosity to five times (High Luminosity-LHC) the design luminosity by 2027. Radiation-tolerant high-speed optical data transmission links will continue to play an important role in the infrastructure of particle physics experiments over the next decade. A new generation of optoelectronics that meet the increased performance and radiation tolerance limits imposed by the increase in the intensity of the collisions at the interaction points are currently being developed. This thesis focuses on the development of a general purpose bi-directional 5 Gb/s radiation tolerant optical transceiver, the Versatile Transceiver (VTRx), for use by the LHC experiments over the next five years, and on exploring the radiation-tolerance of state-of-the art silicon photonics modulators for HL-LHC data transmission applications. The compliance of the VTRx ...

  12. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.


    Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.

  13. Battery-free, stretchable optoelectronic systems for wireless optical characterization of the skin. (United States)

    Kim, Jeonghyun; Salvatore, Giovanni A; Araki, Hitoshi; Chiarelli, Antonio M; Xie, Zhaoqian; Banks, Anthony; Sheng, Xing; Liu, Yuhao; Lee, Jung Woo; Jang, Kyung-In; Heo, Seung Yun; Cho, Kyoungyeon; Luo, Hongying; Zimmerman, Benjamin; Kim, Joonhee; Yan, Lingqing; Feng, Xue; Xu, Sheng; Fabiani, Monica; Gratton, Gabriele; Huang, Yonggang; Paik, Ungyu; Rogers, John A


    Recent advances in materials, mechanics, and electronic device design are rapidly establishing the foundations for health monitoring technologies that have "skin-like" properties, with options in chronic (weeks) integration with the epidermis. The resulting capabilities in physiological sensing greatly exceed those possible with conventional hard electronic systems, such as those found in wrist-mounted wearables, because of the intimate skin interface. However, most examples of such emerging classes of devices require batteries and/or hard-wired connections to enable operation. The work reported here introduces active optoelectronic systems that function without batteries and in an entirely wireless mode, with examples in thin, stretchable platforms designed for multiwavelength optical characterization of the skin. Magnetic inductive coupling and near-field communication (NFC) schemes deliver power to multicolored light-emitting diodes and extract digital data from integrated photodetectors in ways that are compatible with standard NFC-enabled platforms, such as smartphones and tablet computers. Examples in the monitoring of heart rate and temporal dynamics of arterial blood flow, in quantifying tissue oxygenation and ultraviolet dosimetry, and in performing four-color spectroscopic evaluation of the skin demonstrate the versatility of these concepts. The results have potential relevance in both hospital care and at-home diagnostics.

  14. Thiazole yellow G dyed PVA films for optoelectronics: microstructrural, thermal and photophysical studies (United States)

    Hebbar, Vidyashree; Bhajantri, R. F.; Naik, Jagadish; Rathod, Sunil G.


    In this paper, we report the microstructural, optical and fluorescence properties of poly(vinyl alcohol) (PVA)/Thiazole Yellow G (TY) dye composite prepared by solvent casting. The formation of change-transfer complex as a result of the interaction between the dye molecules and polymer chain is confirmed in FTIR, FT-Raman, XRD and DSC studies. SEM studies present the morphology of the samples. The UV-visible absorption spectra possess characteristic peaks of the TY dye corresponding to n-π* transition along with a characteristic peak of PVA. The composites exhibit the decreasing energy gap and increasing refractive index with an increase in wt.% of the TY dye. The fluorescence-quenching phenomena are observed in emission wavelength range of 391-406 nm upon excitation in the vicinity of absorption maxima (335 nm) with the quantum yield of 0.72 for lowest concentration of dye. The prepared composites bear high brightness, and improved thermal stability, which make them a promising material for sensors and optoelectronic applications.

  15. Optoelectronic Properties of Van Der Waals Hybrid Structures: Fullerenes on Graphene Nanoribbons (United States)

    Correa, Julián David; Orellana, Pedro Alejandro; Pacheco, Mónica


    The search for new optical materials capable of absorbing light in the frequency range from visible to near infrared is of great importance for applications in optoelectronic devices. In this paper, we report a theoretical study of the electronic and optical properties of hybrid structures composed of fullerenes adsorbed on graphene and on graphene nanoribbons. The calculations are performed in the framework of the density functional theory including the van der Waals dispersive interactions. We found that the adsorption of the C60 fullerenes on a graphene layer does not modify its low energy states, but it has strong consequences for its optical spectrum, introducing new absorption peaks in the visible energy region. The optical absorption of fullerenes and graphene nanoribbon composites shows a strong dependence on photon polarization and geometrical characteristics of the hybrid systems, covering a broad range of energies. We show that an external electric field across the nanoribbon edges can be used to tune different optical transitions coming from nanoribbon–fullerene hybridized states, which yields a very rich electro-absorption spectrum for longitudinally polarized photons. We have carried out a qualitative analysis on the potential of these hybrids as possible donor-acceptor systems in photovoltaic cells. PMID:28336904

  16. Interpretation of optoelectronic transient and charge extraction measurements in dye-sensitized solar cells. (United States)

    Barnes, Piers R F; Miettunen, Kati; Li, Xiaoe; Anderson, Assaf Y; Bessho, Takeru; Gratzel, Michael; O'Regan, Brian C


    Tools that assess the limitations of dye sensitized solar cells (DSSCs) made with new materials are critical for progress. Measuring the transient electrical signals (voltage or current) after optically perturbing a DSSC is an approach which can give information about electron concentration, transport and recombination. Here we describe the theory and practice of this class of optoelectronic measurements, illustrated with numerous examples. The measurements are interpreted with the multiple trapping continuum model which describes electrons in a semiconductor with an exponential distribution of trapping states. We review standard small perturbation photocurrent and photovoltage transients, and introduce the photovoltage time of flight measurement which allows the simultaneous derivation of both effective diffusion and recombination coefficients. We then consider the utility of large perturbation measurements such as charge extraction and the current interrupt technique for finding the internal charge and voltage within a device. Combining these measurements allows differences between DSSCs to be understood in terms such as electron collection efficiency, semiconductor conduction band edge shifts and recombination kinetics.

  17. SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Wirths, S., E-mail: [Peter Grünberg Institute (PGI 9-IT) and JARA-FIT, Forschungszentrum Juelich, 52425 (Germany); Buca, D. [Peter Grünberg Institute (PGI 9-IT) and JARA-FIT, Forschungszentrum Juelich, 52425 (Germany); Ikonic, Z.; Harrison, P. [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom); Tiedemann, A.T.; Holländer, B.; Stoica, T.; Mussler, G. [Peter Grünberg Institute (PGI 9-IT) and JARA-FIT, Forschungszentrum Juelich, 52425 (Germany); Breuer, U. [Central Institute for Engineering, Electronics and Analytics (ZEA-3), Forschungszentrum Juelich, 52425 (Germany); Hartmann, J.M. [CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble (France); Grützmacher, D.; Mantl, S. [Peter Grünberg Institute (PGI 9-IT) and JARA-FIT, Forschungszentrum Juelich, 52425 (Germany)


    In this contribution, we propose a laser concept based on a double heterostructure consisting of tensile strained Ge as the active medium and SiGeSn ternaries as cladding layers. Electronic band-structure calculations were used to determine the Si and Sn concentrations yielding a type I heterostructure with appropriate band-offsets (50 meV) between strained Ge and SiGeSn. Reduced pressure chemical vapor deposition system was employed to study the laser structure growth. Detailed analyses regarding layer composition, crystal quality, surface morphology and elastic strain are presented. A strong temperature dependence of the Si and Sn incorporation has been obtained, ranging from 4 to 19 at.% Si and from 4 to 12 at.% Sn (growth temperatures between 350 °C and 475 °C). The high single crystalline quality and low surface roughness of 0.5–0.75 nm demonstrate that our layers are suitable for heterostructure laser fabrication. - Highlights: • Sn based group IV materials for photonics • Bandstructure calculations of SiGeSn/strained Ge double heterostructures. • Si and Sn concentrations in SiGeSn layers between 4 and 19 at.% and 4 and 11 at.%, respectively. • Growth of SiGeSn layers with high crystalline quality for optoelectronic applications.

  18. Optoelectronic properties of a novel fluorene derivative for organic light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Junsheng; Lou, Shuangling; Qian, Jincheng; Jiang, Yadong [University of Electronic Science and Technology of China (UESTC), State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, Chengdu (China); Zhang, Qing [Shanghai Jiaotong University, Department of Polymer Science, School of Chemistry and Chemical Technology, Shanghai (China)


    We report the optoelectronic properties of a novel fluorene derivative of 6,6'-(9H-fluoren-9,9-diyl)bis(2,3-bis (9,9-dihexyl-9H-fluoren-2-yl)quinoxaline) (BFLBBFLYQ) used for organic light-emitting diode. UV-Vis absorption, photoluminescence (PL) and electroluminescence (EL) spectra of BFLBBFLYQ and the blend doped with N,N'-biphenyl-N,N'-bis-(3-methylphenyl)-1,1'-biphenyl-4,4'-di- amine (TPD) in solid state and in solution were investigated. The results showed that BFLBBFLYQ had a PL peak at 451 nm in solid and solution states and an EL peak at 483 nm with a broad emission band, resulting from fluorenone defects. Exciplex emission was observed in BFLBBFLYQ-TPD blend solid state with a green emission peaking at 530 nm. Also the blend in solution showed solvatochromism in polarity solvent upon UV irradiation. A new absorption band appeared at around 470 nm of BFLBBFLYQ-TPD blend in chloroform solution, and disappeared when diluted in absorption spectrum. Meanwhile, a low energy emission band from 530 to 580 nm appeared and increased with material concentration and UV irradiation time. (orig.)

  19. Opto-electronic properties of Ta3N5: a joint experimental and theoretical study (United States)

    Morbec, Juliana; Rocca, Dario; Pinaud, Blaise; Jaramillo, Thomas; Galli, Giulia


    Tantalum nitride (Ta3N5) is considered a promising material for use in photoelectrochemical cells, due to its suitable band gap for visible light absorption and favorable band-edge positions for water splitting. However, Ta3N5 films have been recently shown to exhibit low photocurrent (i.e. less than 50% of the theoretical limit). We report a joint experimental and ab initio theoretical study of the opto-electronic properties of Ta3N5, aimed at understanding possible reasons for the limited photocurrent. Our experimental optical spectra of films with different thicknesses show two absorption edges at 2.1 and 2.5 eV. To provide an interpretation of these features, we performed ab initio calculations, at several levels of theory, of the electronic band structure and optical absorption spectra of Ta3N5. We employed density functional theory with semi-local (PBE/LDA) and hybrid (PBE0/HSE06) functionals and many body perturbation theory at the G0W0 level, and we obtained optical spectra by solving the Bethe-Salpeter equation within density matrix perturbation theory. Work supported by DOE/BES DE-FG02-06ER46262 and NSF-CHE-1305124. Computing resources are partially provided by NERSC.

  20. Theoretical studies of GaInNAs for optoelectronic device applications

    CERN Document Server

    Alexandropoulos, D


    This thesis focuses on the theoretical analysis of GalnNAs alloys for use in optoelectronic devices. We develop reliable theoretical models that describe the properties of GaInNAs alloys and apply these to establish design rules. We develop a k centre dot p model for the band structure of GaInNAs-based Quantum Wells (QW) that accounts for valence band mixing effects, strain effects and the N induced coupling of the conduction band states of GaInNAs alloys. We implement the model to study the effect of N on the conduction and valence bands. The optical properties of GaInNAs structures are studied and design rules that ensure optimal performance are derived for 1.3 mu m emission. It is established that high N content decreases the differential gain and the Momentum Matrix Element (MME) for TE polarisation while it increases the transparency concentration and the MME for TM polarisation. The material gain and linewidth enhancement factor are found to have comparable values to InGaAsP structures. The effect of al...

  1. All Inorganic Halide Perovskites Nanosystem: Synthesis, Structural Features, Optical Properties and Optoelectronic Applications. (United States)

    Li, Xiaoming; Cao, Fei; Yu, Dejian; Chen, Jun; Sun, Zhiguo; Shen, Yalong; Zhu, Ying; Wang, Lin; Wei, Yi; Wu, Ye; Zeng, Haibo


    The recent success of organometallic halide perovskites (OHPs) in photovoltaic devices has triggered lots of corresponding research and many perovskite analogues have been developed to look for devices with comparable performance but better stability. Upon the preparation of all inorganic halide perovskite nanocrystals (IHP NCs), research activities have soared due to their better stability, ultrahigh photoluminescence quantum yield (PL QY), and composition dependent luminescence covering the whole visible region with narrow line-width. They are expected to be promising materials for next generation lighting and display, and many other applications. Within two years, a lot of interesting results have been observed. Here, the synthesis of IHPs is reviewed, and their progresses in optoelectronic devices and optical applications, such as light-emitting diodes (LEDs), photodetectors (PDs), solar cells (SCs), and lasing, is presented. Information and recent understanding of their crystal structures and morphology modulations are addressed. Finally, a brief outlook is given, highlighting the presently main problems and their possible solutions and future development directions.

  2. Effect of End-capping Functional Groups on the Optoelectronic Properties of Oligothiophene Derivatives

    Institute of Scientific and Technical Information of China (English)

    左振宇; 孙宏建; 李晓燕


    Five novel oligothiophene derivatives end-capped by different functional groups (R=ethoxyl (EtOP3T), me- thylsulfanyl (MSP3T), acetyl (AcP3T), methylsulfonyl (MSO2P3T) and biphenyl (BP3T) groups) were synthe- sized. They were characterized by nuclear magnetic resonance (IH NMR), mass spectrometry (MS) and Fourier transform Infra-red spectra (IR). The relationship between end-capping functional groups and optoelectronic prop- erties of them was investigated. It was found that the compound with sulfonyl group in the molecular structure (MSOeP3T) shows the highest oxidation stability (also supported by theoretical calculations) and best thermal sta- bility among the five compounds. The results of scanning electron microscope (SEM) interpret that MSOzP3T dis- plays excellent ability of self-film forming. This reveals that it could be a potential candidate for thin film material. The liquid crystal property of MSO2P3T was characterized by polarized optical microscopy analysis (POM) and X-ray diffraction (XRD). The results of this paper provide useful information for the design of tailored oligothio- phene derivatives for devices.

  3. Optoelectronic properties correlation to preparation of Au/La-oxide nanocomposite films

    Directory of Open Access Journals (Sweden)

    Dakhel A.A.


    Full Text Available Gold nanoparticles were grown in La-oxide thin films deposited on quartz and silicon substrates. These films were annealed in pure hydrogen gas atmosphere at 300°C for different durations 15 min, 30 min, and 45 min and characterised by the X-ray fluorescence (XRF and X-ray diffraction. The matrix La-oxide remained amorphous up to 400°C. The fraction of Au in La-oxide host material was 7 % molar with crystallite size of 6.8 nm. The Au NPs slightly grew by annealing in H2 gas at 300 K. The samples were investigated by UV-Vis-NIR absorption spectroscopy and dc-electrical measurements. They exhibit conducting properties and with H2 gas annealing, they showed red shifting of the bandgap with remarkable reduction of optical absorption coefficient by ~25 % and remarkable increase in electrical conductivity ~124 %. A global study of the influence of low-temperature post annealing in H2 gas on the electrical, structural, optical, and optoelectronic properties was conducted.

  4. Tunable emission and conductivity enhancement by tellurium doping in CdS nanowires for optoelectronic applications (United States)

    Kamran, Muhammad Arshad; Nabi, Ghulam; Majid, Abdul; Iqbal, Muhammad Waqas; Alharbi, Thamer; Zhang, Yongyou; Zou, Bingsuo


    Improvement of the optical and electrical characteristics is essential to get advanced performance from one dimensional (1D) material. Here, we report the first synthesis of a single crystalline Te-doped CdS nanowires (NWs) by a chemical-vapor-deposition (CVD) method. Room temperature photoluminescence (PL) spectra showed that Te concentration plays an important role in tuning emission color from orange to infrared (IR). Decrease in bandgap and PL intensity with increase in Te concentration was observed as compared to undoped CdS NWs. Red and IR emissions were found at 736.5 and 881 nm for doping concentration >6.06%. To our best knowledge, IR emission band has been observed for the first time in CdS NWs. Red-shift of LO phonon mode and its overtone in Raman spectra, and lifetime of red and IR emissions are longer than bandgap of host indicating the doping effect of CdS NWs. Energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) of the Te-doped CdS NWs further confirms the presence of Te in the CdS NWs. Output characteristics confirm enhanced output current Ids with the increase in doping concentration. A possible growth mechanism was proposed. Doping technique offers to develop high-quality, a very stable, effective, and easily-applicable way to enhance the performance of one dimensional optoelectronic devices and solar cell applications.

  5. Granulometric composition study of mineral resources using opto-electronic devices and Elsieve software system

    Directory of Open Access Journals (Sweden)

    Kaminski Stanislaw


    Full Text Available The use of mechanical sieves has a great impact on measurement results because occurrence of anisometric particles causes undercounting the average size. Such errors can be avoided by using opto-electronic measuring devices that enable measurement of particles from 10 μm up to a few dozen millimetres in size. The results of measurement of each particle size fraction are summed up proportionally to its weight with the use of Elsieve software system and for every type of material particle-size distribution can be obtained. The software allows further statistical interpretation of the results. Beam of infrared radiation identifies size of particles and counts them precisely. Every particle is represented by an electronic impulse proportional to its size. Measurement of particles in aqueous suspension that replaces the hydrometer method can be carried out by using the IPS L analyser (range from 0.2 to 600 μm. The IPS UA analyser (range from 0.5 to 2000 μm is designed for measurement in the air. An ultrasonic adapter enables performing measurements of moist and aggregated particles from 0.5 to 1000 μm. The construction and software system allow to determine second dimension of the particle, its shape coefficient and specific surface area. The AWK 3D analyser (range from 0.2 to 31.5 mm is devoted to measurement of various powdery materials with subsequent determination of particle shape. The AWK B analyser (range from 1 to 130 mm measures materials of thick granulation and shape of the grains. The presented method of measurement repeatedly accelerates and facilitates study of granulometric composition.

  6. Thin film technologies for optoelectronic components in fiber optic communication (United States)

    Perinati, Agostino


    will grow at an annual average rate of 22 percent from 1.3 million fiber-km in 1995 to 3.5 million fiber-km in 2000. The worldwide components market-cable, transceivers and connectors - 6.1 billion in 1994, is forecasted to grow and show a 19 percent combined annual growth rate through the year 2000 when is predicted to reach 17.38 billion. Fiber-in-the-loop and widespread use of switched digital services will dominate this scenario being the fiber the best medium for transmitting multimedia services. As long as communication will partially replace transportation, multimedia services will push forward technology for systems and related components not only for higher performances but for lower cost too in order to get the consumers wanting to buy the new services. In the long distance transmission area (trunk network) higher integration of electronic and optoelectronic functions are required for transmitter and receiver in order to allow for higher system speed, moving from 2.5 Gb/s to 5, 10, 40 Gb/s; narrow band wavelength division multiplexing (WDM) filters are required for higher transmission capacity through multiwavelength technique and for optical amplifier. In the access area (distribution network) passive components as splitters, couplers, filters are needed together with optical amplifiers and transceivers for point-to-multipoint optical signal distribution: main issue in this area is the total cost to be paid by the customer for basic and new services. Multimedia services evolution, through fiber to the home and to the desktop approach, will be mainly affected by the availability of technologies suitable for component consistent integration, high yield manufacturing processes and final low cost. In this paper some of the optoelectronic components and related thin film technologies expected to mainly affect the fiber optic transmission evolution, either for long distance telecommunication systems or for subscriber network, are presented.

  7. Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics (United States)

    Mikulics, M.; Winden, A.; Marso, M.; Moonshiram, A.; Lüth, H.; Grützmacher, D.; Hardtdegen, H.


    Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nW and 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.

  8. Electronic and optoelectronic devices based on chirality-enriched wafer-scale single-wall carbon nanotube thin films (United States)

    Gao, Weilu; He, Xiaowei; Xie, Lijuan; Zhang, Qi; Haroz, Erik; Doorn, Stephen K.; Kono, Junichiro


    The unique and rich material properties of single-wall carbon nanotubes (SWCNTs) make them attractive for nano-electronic and optoelectronic applications. Slight changes in tube diameter and wrapping angle, defined by the chirality indices (n, m), can dramatically modify the bandstructure, which can be utilized for designing devices with tailored properties. However, it remains to be a challenge to fabricate macroscopic, single-chirality devices. Here, we introduce a simple way of producing chirality-enriched wafer-scale SWCNT films by combining recently developed solution-based polymer-modified sorting method and vacuum filtration. The produced thin films can be easily transferred onto any substrate to have a CMOS compatible wafer. We fabricated a transistor of (6,5)-enriched SWCNTs with an on/off ratio >103. Large-scale photothermoelectric-effect-based and photovoltaic-effect-based photodetectors made of (6,6)- and (6,5)-enriched films, respectively, will also be discussed.

  9. Thin-film growth and patterning techniques for small molecular organic compounds used in optoelectronic device applications. (United States)

    Biswas, Shaurjo; Shalev, Olga; Shtein, Max


    Rapid advances in research and development in organic electronics have resulted in many exciting discoveries and applications, including organic light-emitting devices for information display and illumination, solar cells, photodetectors, chemosensors, and logic. Organic optoelectronic materials are broadly classified as polymeric or small molecular. For the latter category, solvent-free deposition techniques are generally preferred to form well-defined interfaces and improve device performance. This article reviews several deposition and patterning methods for small molecular thin films and devices, including organic molecular beam deposition, vacuum thermal evaporation, organic vapor phase deposition, and organic vapor jet printing, and compares them to several other methods that have been proposed recently. We hope this review provides a compact but informative summary of the state of the art in organic device processing and addresses the various techniques' governing physical principles.

  10. Effective photoconductivity of exfoliated black phosphorus for optoelectronic switching under 1.55 μm optical excitation

    Energy Technology Data Exchange (ETDEWEB)

    Penillard, A., E-mail:; Tripon-Canseliet, C.; Maksimovic, I.; Géron, E. [Laboratoire de Physique et d' Etude des Matériaux, Ecole Supérieure de Physique et de Chimie Industrielle de la ville de Paris, UMR8213, 10 rue Vauquelin 75231 Paris Cedex 05 (France); Rosticher, M. [Laboratoire Pierre Aigrain, Département de Physique de l' Ecole Normale Supérieure, 24 rue Lhomond 75231 Paris Cedex 05 (France); Liu, Z. [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)


    We present a microwave photoconductive switch based on exfoliated black phosphorus and strongly responding to a 1.55 μm optical excitation. According to its number of atomic layers, exfoliated black phosphorus presents unique properties for optoelectronic applications, like a tunable direct bandgap from 0.3 eV to 2 eV, strong mobilities, and strong conductivities. The switch shows a maximum ON/OFF ratio of 17 dB at 1 GHz, and 2.2 dB at 20 GHz under 1.55-μm laser excitation at 50 mW, never achieved with bidimensional materials.

  11. Blue-Green Color Tunable Solution Processable Organolead Chloride-Bromide Mixed Halide Perovskites for Optoelectronic Applications. (United States)

    Sadhanala, Aditya; Ahmad, Shahab; Zhao, Baodan; Giesbrecht, Nadja; Pearce, Phoebe M; Deschler, Felix; Hoye, Robert L Z; Gödel, Karl C; Bein, Thomas; Docampo, Pablo; Dutton, Siân E; De Volder, Michael F L; Friend, Richard H


    Solution-processed organo-lead halide perovskites are produced with sharp, color-pure electroluminescence that can be tuned from blue to green region of visible spectrum (425-570 nm). This was accomplished by controlling the halide composition of CH3NH3Pb(BrxCl1-x)3 [0 ≤ x ≤ 1] perovskites. The bandgap and lattice parameters change monotonically with composition. The films possess remarkably sharp band edges and a clean bandgap, with a single optically active phase. These chloride-bromide perovskites can potentially be used in optoelectronic devices like solar cells and light emitting diodes (LEDs). Here we demonstrate high color-purity, tunable LEDs with narrow emission full width at half maxima (FWHM) and low turn on voltages using thin-films of these perovskite materials, including a blue CH3NH3PbCl3 perovskite LED with a narrow emission FWHM of 5 nm.

  12. Recent progress in research of f-SiC codoped with N-B-Al pairs for optoelectronics (United States)

    Shiyi, Zhuo; Xi, Liu; Xuechao, Liu; Erwei, Shi


    This paper reviewed the advances in fluorescent SiC codoped with nitrogen, boron and aluminum dopants applied to optoelectronics in recent years. The progress aspects in research of the fluorescent property, recombination theory, experiment, and construction design were discussed. The advantages that fluorescent SiC based white LEDs compared with conventional white LEDs were analyzed. It was confirmed that fluorescent SiC is a promising material to replace phosphor in the luminous field. Finally, the problems in the study of fluorescent 4H-SiC were pointed out. Project supported by the Shanghai Rising-Star Program (No. 13QA1403800), the Innovation Program of the Chinese Academy of Sciences (No. KJCX2-EW-W10), the National High-Tech R&D Program of China (Nos. 2013AA031603, 2014AA032602), and the National Natural Science Foundation of China (No. 31275136).

  13. Blue-Green Color Tunable Solution Processable Organolead Chloride–Bromide Mixed Halide Perovskites for Optoelectronic Applications (United States)


    Solution-processed organo-lead halide perovskites are produced with sharp, color-pure electroluminescence that can be tuned from blue to green region of visible spectrum (425–570 nm). This was accomplished by controlling the halide composition of CH3NH3Pb(BrxCl1–x)3 [0 ≤ x ≤ 1] perovskites. The bandgap and lattice parameters change monotonically with composition. The films possess remarkably sharp band edges and a clean bandgap, with a single optically active phase. These chloride–bromide perovskites can potentially be used in optoelectronic devices like solar cells and light emitting diodes (LEDs). Here we demonstrate high color-purity, tunable LEDs with narrow emission full width at half maxima (FWHM) and low turn on voltages using thin-films of these perovskite materials, including a blue CH3NH3PbCl3 perovskite LED with a narrow emission FWHM of 5 nm. PMID:26236949

  14. Optical coupling of bare optoelectronic components and flexographically printed polymer waveguides in planar optronic systems (United States)

    Wang, Yixiao; Wolfer, Tim; Lange, Alex; Overmeyer, Ludger


    Large scale, planar optronic systems allowing spatially distributed functionalities can be well used in diverse sensor networks, such as for monitoring the environment by measuring various physical quantities in medicine or aeronautics. In these systems, mechanically flexible and optically transparent polymeric foils, e.g. polymethyl methacrylate (PMMA) and polyethylene terephthalate (PET), are employed as carrier materials. A benefit of using these materials is their low cost. The optical interconnections from light sources to light transmission structures in planar optronic systems occupy a pivotal position for the sensing functions. As light sources, we employ the optoelectronic components, such as edgeemitting laser diodes, in form of bare chips, since their extremely small structures facilitate a high integration compactness and ensure sufficient system flexibility. Flexographically printed polymer optical waveguides are deployed as light guiding structures for short-distance communication in planar optronic systems. Printing processes are utilized for this generation of waveguides to achieve a cost-efficient large scale and high-throughput production. In order to attain a high-functional optronic system for sensing applications, one of the most essential prerequisites is the high coupling efficiency between the light sources and the waveguides. Therefore, in this work, we focus on the multimode polymer waveguide with a parabolic cross-section and investigate its optical coupling with the bare laser diode. We establish the geometrical model of the alignment based on the previous works on the optodic bonding of bare laser diodes and the fabrication process of polymer waveguides with consideration of various parameters, such as the beam profile of the laser diode, the employed polymer properties of the waveguides as well as the carrier substrates etc. Accordingly, the optical coupling of the bare laser diodes and the polymer waveguides was simulated

  15. Rationally designed donor-acceptor scheme based molecules for applications in opto-electronic devices. (United States)

    Subash Sundar, T; Sen, R; Johari, P


    Several donor (D)-acceptor (A) based molecules are rationally designed by adopting three different schemes in which the conjugation length, strength of the donor and acceptor moieties, and planarity of the molecules are varied. These variations are made by introducing a π-conjugated linkage unit, terminating the ends of the moieties by different electron donating and accepting functional groups, and fusing the donor and acceptor moieties, respectively. Our DFT and TDDFT based calculations reveal that using the above-mentioned design schemes, the electronic and optical properties of the D-A based molecules can be largely tuned. While introduction of a linkage and fusing of moieties enhance the π-π interaction, addition of electron donating groups (-CH3, -OH, and -NH2) and electron accepting groups (-CF3, -CN, -NO2, and -NH3(+)) varies the strength of the donor and acceptor moieties. These factors lead to modulation of the HOMO and LUMO energy levels and facilitate the engineering of the HOMO-LUMO gap and the optical gap over a wide range of ∼0.7-3.7 eV. Moreover, on the basis of calculated ionization potential and reorganization energy, most of the investigated molecules are predicted to be air stable and to exhibit high electron mobility, with the possibility of the presence of ambipolar characteristics in a few of them. The results of our calculations not only demonstrate the examined molecules to be the potential materials for organic opto-electronic devices, but also establish an understanding of the composition-structure-property correlation, which will provide guidelines for designing and synthesizing new materials of choice.

  16. Research and development of photovoltaic power system. Study of carrier dynamics in a-Si from optical and optoelectronic properties; Taiyoko hatsuden system no kenky kaihatsu. Amorphous silicon no koden tokusei to sono carrier dynamics no kogakuteki kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Hamakawa, K. [Osaka University, Osaka (Japan). Faculty of Engineering Science


    This paper reports the result obtained during fiscal 1994 on research on an optical study of optoelectronic properties of amorphous silicon and its carrier dynamics. Studies have been performed on elucidation of the optoelectronic conversion mechanism in an a-Si film p-i-n junction system and the relationship of the mechanism with the optoelectronic properties. In the studies, optically induced defect level distribution was evaluated by using the modulated optical current spectroscopy, and confirmation was made on model forecast and qualitative agreement, such as large increase in neutral defect levels in association with beam irradiation. In research on elucidation of a film forming mechanism for a-Si based alloys, and material property control, a high-sensitivity reflective infrared spectroscopy was used to observe mechanisms such as treatments and processes given in device fabrication. In research on optical and optoelectronic properties of an s-Si alloy thin film by using the modulated spectroscopy, a new evaluation technology dealing with amorphous semiconductors was developed. The technology separately evaluates carrier migration factors of electrons and holes by combining polarization angle dependence of electro-absorption signals with hole migration measurements. 4 figs.

  17. Tracking control strategy for the optoelectronic system on the flexible suspended platform based on backstepping method (United States)

    Yu, Wei; Ma, Jiaguang; Xiao, Jing


    To improve the optoelectronic tracking ability and rope-hanged platform attitude stability, against the interact effect between rope-hanged platform and optoelectronic system during system tracking process, the optoelectronic system fixed on rope hanged platform simplified dynamic model, according to the system's Lagrange dynamic model, was established. Backstepping method was employed to design an integrated controller for both optoelectronic system azimuth direction steering and platform attitude stabilizing. To deal with model's uncertainty and disturbance, a sliding mode controller form based exponential reaching law was adopted to structure the integrated controller. Simulation experiments simulated an optoelectronic system with 600mm caliber telescope, whose inertia fluctuation is 6%. The maximal control moment is 15Nm. And the external disturbance and internal friction effected together. When the line of sight(LOS) azimuth angular input is a step signal with 1rad amplitude, the response's overshoot is 6%, and the response time is 6.2s, and the steady state error is less than 4×10-4rad. When the input is a sinusoidal signal of 0.2rad amplitude with 0.0318Hz frequency, the LOS azimuth angular error amplitude is 5. 6×10-4rad. It is concluded that the controller designed in this article has excellent ability and can ensure the system's stability.

  18. Zinc oxide thin films and nanostructures for optoelectronic applications (United States)

    Yun, Juhyung

    The objective of this research focuses on investigating optical, electrical, and structural properties of Al doped ZnO (AZO) and developing novel approaches to demonstrate and improve the photovoltaics and photodetectors by introducing AZO nanoscaled structures. ZnO has been widely studied for optoelectronic applications such as light emitting diodes, lasers and photodiodes covering the ultraviolet spectrum because of its wide and direct bandgap and high exciton binding energy. In this research, aluminum doped ZnO films were grown by a dual beam sputtering method which is a combination of RF sputtered ZnO and DC sputtered Al. Various approaches were applied to characterize its optical, electrical and structural modulation in terms of growth parameters and doping parameters. As an n-type dopant, Al doping was controlled from 5x016 to 5x0 20 cm-3 maintaining visible transparency with a wider transparency as Al increased, and high mobility ( 2 ˜ 14 cm2/V.s). For the optoelectric applications, a ZnO/Si heterojunction was demonstrated and studied regarding Al doping effects on the anisotype and isotype junction. An unlikely conventional photovoltaic structure suggested the ZnO/Si solar cell to be advantageous in terms of low cost fabrication process -- low temperature, no diffusion, and large area processing. In this structure, AZO plays a role as a transparent current spreading layer and rectifying junction with silicon (Si). Furthermore, by introducing metal nanostructures inside of the AZO film, light harvesting was enhanced because of plasmonic and light scattering effects ensuring minimized electrical and optical loss within the AZO. To improve photovoltaic performance, a transparent and conductive nanolens array was embedded on ITO film and employed on a conventional Si solar cell using large scale nanoimprint method. The proposed structure provides superior optical transparency beyond 700 nm of wavelength and omnidirectional broadband low reflectivity as well as

  19. Growth on patterned substrates for optoelectronic device application (United States)

    Gupta, Vinod Kumar

    In this thesis growth on patterned substrates has been studied for the lateral bandgap control of the quantum well (QW) structures, utilising indium migration from the side facets onto the adjoining (100) surfaces, leading to the possibility of integration of multi- functional optoelectronic devices. InGaAs/GaAs/AlGaAs single quantum well (SQW) lasers and InGaAs/InAlAs QW heterostructures were grown by molecular beam epitaxy (MBE) on (100) GaAs and InP substrates respectively, patterned to produce (100) mesa top surfaces with angled side facets. Chemical beam epitaxy (CBE) was used for the growth of InGaAs/InP heterostructures over InP substrates, patterned into undercut mesas with (100) top surfaces using chemically assisted ion beam etching (CAIBE). Indium migration behaviour was compared by growing two InGaAs/GaAs/AlGaAs SQW graded index separate confinement heterostructure (GRINSCH) lasers by MBE over patterned GaAs substrates. The first laser was grown using As2 throughout, whereas the active region of the second laser was grown using As4. It is observed that the use of As4 facilitates the migration process whilst the use of As2 completely stops it. However, the broad area devices of both lasers exhibit extremely low threshold current densities and very high external quantum efficiencies. Split contact devices were made by growing InGaAs/GaAs/AlGaAs SQW GRINSCH lasers by MBE over variable step width mesas patterned on GaAs substrates using a newly designed mask. Electrical measurements on partially pumped devices showed bistability or pulsation behaviour depending on the bias conditions on the unpumped section. Growth of InGaAs/InP heterostructures by CBE on undercut mesas showed facetting behaviour producing atomically flat (111)B planes. Complete triangular shape structures bounded by very smooth (111)B facets were produced on mesas as narrow as 2.0 [mu]m. This shows the strong possibility of growing one dimensional (1D) quantum wire structures, produced

  20. Defect-Induced Optoelectronic Response in Single-layer Group-VI Transition-Metal Dichalcogenides (United States)

    Chow, Philippe K.

    The ever-evolving symbiosis between mankind and nanoelectronics-driven technology pushes the limits of its constituent materials, largely due to the dominance of undesirable hetero-interfacial physiochemical behavior at the few-nanometer length scale, which dominates over bulk material characteristics. Driven by such instabilities, research into two-dimensional (2D) van der Waals-layered materials (e.g. graphene, transition metal dichalcogenides (TMDCs), boron nitride), which have characteristically inert surface chemistry, has virtually exploded over the past few years. The discovery of an indirect- to direct-gap conversion in semiconducting group-VI TMDCs (e.g. MoS2) upon thinning to a single atomic layer provided the critical link between metallic and insulating 2D materials. While proof-of-concept demonstrations of single-layer TMDC-based devices for visible-range photodetection, light-emission and solar energy conversion have showed promising results, the exciting qualities are downplayed by poorly-understood defectinduced photocarrier traps, limiting the best-achieved external quantum efficiencies to approximately ~1%. This thesis explores the behavior of defects in atomically-thin TMDC layers in response to optical stimuli using a combination of steady-state photoluminescence, reflectance and Raman spectroscopy at room-temperature. By systematically varying the defect density using plasma-irradiation techniques, an unprecedented room-temperature defect-induced monolayer PL feature was discovered. High-resolution transmission electron microscopy correlated the defect-induced PL with plasma-generation of sulfur vacancy defects while reflectance measurements indicate defect-induced sub-bandgap light absorption. Excitation intensity-dependent PL measurements and exciton rate modeling further help elucidate the origin of the defect-induced PL response and highlights the role of non-radiative recombination on exciton conversion processes. The results in this

  1. Optics and Optoelectronics of Two-dimensional Semiconducting Monolayers and Heterostructures (United States)

    Ross, Jason Solomon

    Until recently, the physics of truly two-dimensional (2D) excitons could only be explored theoretically. Following the discovery of graphene, many 2D materials were quickly identified and isolated, one system being the semiconducting Group VI-B transition metal dichalcogenides (TMDs). These semiconductors are the first air-stable materials that are atomically thin (three atomics thick), and yet can be produced in arbitrarily large lateral sheets. They have a direct band gap in which confinement leads to large spatial overlap of electrons and holes resulting in strongly coupled excitonic transitions that dominate light-matter interactions. The direct band-gap of monolayer TMDs occurs at the corners of the hexagonal Brillouin zone, referred to as the K valleys. Entirely unique to these materials, excitons in adjacent K valleys selectively couple to light of opposite circular polarization, i.e. the K (K') valley is selective to right (left) circularly polarized photons. This property offers the possible realization of novel devices that will manipulate the valley index, known as valleytronics. Further, creating a stacked heterostructure (HS) of two TMD monolayers of different molecular species can exhibit type-II band alignment leading to the first atomically sharp built-in p-n junction and a bright interlayer exciton with long lifetimes. Being flat 2D sheets, it is easy to couple these materials to nearby systems such as microfabricated electrodes and photonic crystal cavities allowing for unique modulation and device schemes. Here, I employ both optical and electronic techniques to study the unique physics of 2D excitons in TMDs as well as demonstrate some of their first optoelectronic and valleytronic devices. The most notable achievement is perhaps the first demonstrations of both atomically thin and 2D heterostructure light emitting diodes and photovoltaic devices. Other breakthroughs include the first demonstration of exciton charging tunability in a 2D system

  2. Standard Cell-Based Implementation of a Digital Optoelectronic Neural-Network Hardware (United States)

    Maier, Klaus D.; Beckstein, Clemens; Blickhan, Reinhard; Erhard, Werner


    A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

  3. Synthesis оf Optoelectronic System for Control оf Microelectronic Structures

    Directory of Open Access Journals (Sweden)

    G. A. Trapashko


    Full Text Available Development of optoelectronic systems for registration of structuring element images demands improvement of the equipment for control of sizes and a form of microelectronic structures in accordance with design data and absence of introduced defects and impurities. For synthesis of these systems it is necessary to use a special method which allows to substantiate the use of a radiation source in it and  determine main functional parameters of the optoelectronic system. The paper presents the results of the method that has been used for development of the optoelectronic system operating  with the resolution of 250 nanometers. It has been shown that LED lamps can be used instead of traditionally used halogen and mercury-xenon lamps in the control equipment.

  4. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    Directory of Open Access Journals (Sweden)

    Ioan Botiz


    Full Text Available It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties.

  5. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers (United States)

    Botiz, Ioan; Stingelin, Natalie


    It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. PMID:28788568

  6. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    KAUST Repository

    Botiz, Ioan


    It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. © 2014 by the authors.

  7. Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique

    Directory of Open Access Journals (Sweden)

    D. Lopez-Diaz


    Full Text Available Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.

  8. Optoelectronics in TESLA, LHC and pi-of-the-sky experiments

    CERN Document Server

    Romaniuk, Ryszard; Simrock, Stefan; Wrochna, Grzegorz


    Optical and optoelectronics technologies are more and more widely used in the biggest world experiments of high energy and nuclear physics, as well as in the astronomy. The paper is a kind of a broad digest describing the usage of optoelectronics is such experiments and information about some of the involved teams. The described experiments include: TESLA linear accelerator and FEL, Compact Muon Solenoid at LHC and recently started pi-of-the-sky global gamma ray bursts (with associated optical flashes) observation experiment. Optoelectronics and photonics offer several key features which are either extending the technical parameters of existing solutions or adding quite new practical application possibilities. Some of these favorable features of photonic systems are: high selectivity of optical sensors, immunity to some kinds of noise processes, extremely broad bandwidth exchangeable for either terabit rate transmission or ultrashort pulse generation, parallel image processing capability, etc. The following g...

  9. Attojoule Optoelectronics for Low-Energy Information Processing and Communications: a Tutorial Review

    CERN Document Server

    Miller, David A B


    Optics offers unique opportunities for reducing energy in information processing and communications while resolving the problem of interconnect bandwidth density inside machines. Such energy dissipation overall is now at environmentally significant levels; the source of that dissipation is progressively shifting from logic operations to interconnect energies. Without the prospect of substantial reduction in energy per bit communicated, we cannot continue the exponential growth of our use of information. The physics of optics and optoelectronics fundamentally addresses both interconnect energy and bandwidth density, and optics may be the only scalable solution to such problems. Here we summarize the corresponding background, status, opportunities, and research directions for optoelectronic technology and novel optics, including sub-femtojoule devices in waveguide and novel 2D array optical systems. We compare different approaches to low-energy optoelectronic output devices and their scaling, including lasers, ...

  10. A new switching parameter varying optoelectronic delayed feedback model with computer simulation (United States)

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing


    In this paper, a new switching parameter varying optoelectronic delayed feedback model is proposed and analyzed by computer simulation. This model is switching between two parameter varying optoelectronic delayed feedback models based on chaotic pseudorandom sequences. Complexity performance results show that this model has a high complexity compared to the original model. Furthermore, this model can conceal the time delay effectively against the auto-correlation function, delayed mutual information and permutation information analysis methods, and can extent the key space, which greatly improve its security.

  11. Comparison Of Selected Characteristics Of Brushless DC Motors For Optoelectronic Sensors Positioning

    Directory of Open Access Journals (Sweden)

    Zieleźnicki Jan


    Full Text Available Thanks to their advantageous properties such as higher durability, reliability and wide scope of speed achievable with a given load, brushless DC motors are often used in Line-of-Sight stabilization systems of the optoelectronic aircraft gimbals. Since there are many sub-types and configurations of such motors, choosing the optimal structure is not a trivial issue. This paper presents the selection process of a motor with properties that would make it ideal for use in an optoelectronic gimbal drive.

  12. Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems (United States)

    Otsuji, Taiichi; Sugawara, Kenta; Tamamushi, Gen; Dobroiu, Adrian; Suemitsu, Tetsuya; Ryzhii, Victor; Iwatsuki, Katsumi; Kuwano, Shigeru; Kani, Jun-ichi; Terada, Jun


    This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.

  13. WARRP Core: Optoelectronic Implementation of Network-Router Deadlock-Handling Mechanisms. (United States)

    Pinkston, T M; Raksapatcharawong, M; Choi, Y


    The wormhole adaptive recovery-based routing via pre-emption(WARRP) core optoelectronic chip, which integrates coredeadlock-handling circuitry for a fully adaptive deadlock-freemultiprocessor network router, is presented. This chip demonstratesprimarily the integration of complex deadlock-recovery circuitry andfree-space optoelectronic input-output on a monolithicGaAs-based chip. The design and implementation of thefirst-generation, bit-serial, torus-connected chip that uses 1400transistors and six light-emitting diode-photodetector pairs is presented.

  14. Application research of solar energy optoelectronic system in the design of culture square

    Directory of Open Access Journals (Sweden)

    Yan Qi Feng


    Full Text Available In recent years,as people worsen recognition of revival environment and world energy issue,they have started caring about solar energy,which is convenient to achieve, cheap and renewable clean energy,called the 21 century golden energy.Now our project each of designer need worth thinking is how to apply clean and energy-saving solar energy optoelectronic system to square landscape design. To survey and study about solar energy optoelectronic technology in the culture square design has vital influence from the point of economic and social sustainable development and earth ecology.

  15. Beam test results for the upgraded LHCb RICH optoelectronic readout system

    CERN Document Server

    Carniti, P


    Starting from 2018, the LHCb detector will be upgraded to operate at higher luminosity and extend its potential for new discoveries. The Ring Imaging Cherenkov (RICH) detectors are one of the key components for particle identification of the LHCb detector and the upgraded specifications will require a redesign of the optoelectronic readout chain. In the present work, we describe the experimental setup and the results of the tests carried out with a particle beam to assess and validate the performance of the optoelectronic readout system.

  16. Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems (United States)

    Luc, V. V.; Eliseev, Petr G.; Man'ko, M. A.; Tsotsoriya, M. V.


    Output power and fiber-to-fiber gain along with infernal gain of the active element and optoelectronic signal curves at different values of input power versus pumping current are measured for the amplifier modules on the base of AR-coated InGaAsP/InP BH diodes. It is shown that diagnostics of the amplifier module oper''ation regime may be performed by voltage measurements and the optoelectronic signal can be used to monitor optical information passage in the regenerator device or for the distributed access the data transmitted in the lightwave comrnunicat ion systems. I.

  17. Discovery and Utilization of Nanoscale and Mesoscale Enabling Materials and Processes for Optoelectronics and Electronic Interconnects (United States)


    strained wetting layer surface. We have demonstrated this methology on Ge/Si, although it should work equally well for ni-V systems such as InAs/GaAs... observe multisecond response times to 100 nsec UV excitation pulses. PCCA(SH)DMSO PCCA (S-Azb) DMSO H O 300 400 500 600 700 Wavelength / adjacent spectral intervals would freely transmit to allow the observer to view the scene. These PCCA optical switches could also be utilized

  18. Electronic characterisation and computer modelling of thin film materials and devices for optoelectronic applications

    CERN Document Server

    Zollondz, J


    lock-in techniques. A comparison was made of the two-beam photogating experiment, with a single beam current-voltage measurement, which is also influenced by trapped space charge, as indicators of defect distributions. It was found that the photogating measurement is a more accurate indicator of the distribution of space charge, and hence defects, within a device. Application of the photogating effect in a colour detector is introduced and detector structure proposed. The simple structure and the thin film technique of a-Si:H deposition suggests the possibility of a low cost photodetector with high colour resolution. Double beam collection efficiency measurements have been carried out on hydrogenated amorphous silicon p-i-n devices. Apparent collection efficiencies higher than unity were observed, and explained by a process identified as photogating, in which a low intensity weakly absorbed probe beam modulates the photocurrent produced by a high intensity strongly absorbed bias beam. Computer simulations wer...

  19. Transport phenomena during vapor growth of optoelectronic material - A mercurous chloride system (United States)

    Singh, N. B.


    Crystal growth velocity was measured in a mercurous chloride system in a two-zone transparent furnace as a function of the Rayleigh number by varying a/L, where a is the radius of the growth tube and L is the transport length. Growth velocity data showed different trends at low and high aspect ratio, a result that does not support the velocity-aspect ratio trend predicted by theories. The system cannot be scaled on the basis of measurements done at a low aspect ratio. Some change in fluid flow behavior occurs in the growth tube as the aspect ratio increases.

  20. Electronic GaAs-on-Silicon Material for Advanced High-Speed Optoelectronic Devices (United States)


    Japanese Journal of Applied Physics 28,3 (March 1989) 440-445. 6. T. Nishinaga, T. Nakano, and S. Zhang, "Epitaxial Lateral...Overgrowth of GaAs by LPE," Japanese Journal of Applied Physics 27 (1988) L964-L967. 7. S. Zhang and T. Nishinaga, "LPE Lateral Overgrowth of GaP...34 Japanese Journal of Applied Physics 29,3 (March 1990) 545-550. 8. "Process Challenges in Compound Semiconductors," Report of the

  1. Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Wenzhuo [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Wang, Lei [Department of Electrical Engineering, Columbia University, New York NY 10027 USA; Yu, Ruomeng [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Liu, Yuanyue [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Wei, Su-Huai [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Hone, James [Department of Mechanical Engineering, Columbia University, New York NY 10027 USA; Wang, Zhong Lin [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083 Beijing China


    Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

  2. Metal oxide charge transport material doped with organic molecules (United States)

    Forrest, Stephen R.; Lassiter, Brian E.


    Doping metal oxide charge transport material with an organic molecule lowers electrical resistance while maintaining transparency and thus is optimal for use as charge transport materials in various organic optoelectronic devices such as organic photovoltaic devices and organic light emitting devices.

  3. Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

    KAUST Repository

    Amin, B.


    A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

  4. MOVPE growth and characterisation of ZnO properties for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Oleynik, N.


    In this work a new Metalorganic Vapor Phase Epitaxy (MOVPE) method was developed for the growth and doping of high-quality ZnO films. ZnO is a unique optoelectronic material for the effective light generation in the green to the UV spectral range. Optoelectronic applications of ZnO require impurity-free monocrystalline films with smooth surfaces and low concentration of the defects in the crystal lattice. At the beginning of this work only few reports on MOVPE growth of polycrystalline ZnO existed. The low quality of ZnO is attributed to the lack of an epitaxially matched substrate, and gas-phase prereactions between the Zn- and O-precursors. To achieve control over the ZnO quality, several O-precursors were tested for the growth on GaN/Si(111) or GaN/Sapphire substrates at different reactor temperatures and pressures. ZnO layers with XRD rocking curve FWHMs of the (0002) reflection of 180'' and narrow cathodoluminescence of 1.3 meV of the dominant I{sub 8} emission were synthesized using a two-step growth procedure. In this procedure, ZnO is homoepitaxially grown at high temperature using N{sub 2}O as O-precursor on a low temperature grown ZnO buffer layer using tertiary-butanol as O-precursor. p-Type doping of ZnO, which usually exhibits n-type behaviour, is very difficult. This doping asymmetry represents an issue for ZnO-based devices. Beginning from 1992, a growing number of reports have been claiming a fabrication of p-type ZnO, but, due to the missing reproducibilty, they are still questionable. Native defects, non-stoichiometry, and hydrogen are sources of n-type conductivity of ZnO. Together with a low solubility of the potential p-type dopants and deep position of impurity levels, these factors partly explain p-type doping difficulties in ZnO. However, there is no fully described mechanism of the ZnO doping asymmetry yet. In this work, NH{sub 3}, unsymmetrical dimethylhydrazine (UDMHy), diisobutylamine, and NO nitrogen precursors were studied

  5. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED)


    Andre F. S. Guedes; Vilmar P. Guedes; Simone Tartari; Mônica L. Souza; Idaulo J. Cunha


    The development of Organic Light Emitting Diode (OLED), using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene), PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis), Optical Parameters (OP) and Scanning Electron Microscopy (SEM). In addition,...

  6. Critical difference between optoelectronic properties of α- and β-SnWO4semiconductors: A DFT/HSE06 and experimental investigation

    KAUST Repository

    Harb, Moussab


    The optoelectronic properties of β-SnWO4 are investigated in details using experiments on thin film generated by rapid quenching and the first-principles quantum calculations based on the density functional theory (DFT, including the perturbation approach DFPT) and employing the PBE and the range-separated hybrid exchange-correlation HSE06 functionals. The obtained bandgap, optical absorption coefficient, dielectric constant, and charge-carrier effective masses for β-SnWO4 exhibit data irreconcilable with the reported values: e.g., a large and direct bandgap of 4.30eV (UV-responsive), inconsistent with the values in the literature (visible-responsive). These properties obtained for β-SnWO4 are distinctive from those for α-SnWO4: an indirect bandgap of 1.52eV with higher charge mobilities. These data of intrinsic stoichiometric materials suggest that the literature reported nonstoichiometric materials where defects significantly influence the optoelectronic properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Ultrafast Phase Comparator for Phase-Locked Loop-Based Optoelectronic Clock Recovery Systems

    DEFF Research Database (Denmark)

    Gomez-Agis, F.; Oxenløwe, Leif Katsuo; Kurimura, S.


    The authors report on a novel application of a chi((2)) nonlinear optical device as an ultrafast phase comparator, an essential element that allows an optoelectronic phase-locked loop to perform clock recovery of ultrahigh-speed optical time-division multiplexed (OTDM) signals. Particular interest...

  8. Optoelectronic properties of higher acenes, their BN analogue and substituted derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Armaković, Stevan, E-mail: [University of Novi Sad, Faculty of Sciences, Department of Physics, Trg Dositeja Obradovića 4, 21000, Novi Sad (Serbia); Armaković, Sanja J. [University of Novi Sad, Faculty of Sciences, Department of Chemistry, Biochemistry and Environmental Protection, Trg Dositeja Obradovića 3, 21000, Novi Sad (Serbia); Holodkov, Vladimir [Educons University, Faculty of Sport and Tourism - TIMS, Radnička 30a, 21000, Novi Sad (Serbia); Pelemiš, Svetlana [University of East Sarajevo, Faculty of Technology, Karakaj bb, 75400, Zvornik, Republic of Srpska, Bosnia and Herzegovina (Bosnia and Herzegovina)


    We have investigated optoelectronic properties of higher acenes: pentacene, hexacene, heptacene, octacene, nonacene, decacene and their boron-nitride (BN) analogues, within the framework of density functional theory (DFT). We have also investigated the optoelectronic properties of acenes modified by BN substitution. Calculated optoelectronic properties encompasses: oxidation and reduction potentials, electron and hole reorganization energies and energy difference between excited first singlet and triplet states ΔE(S{sub 1}−T{sub 1}). Oxidation and reduction potentials indicate significantly better stability of BN analogues, comparing with their all-carbon relatives. Although higher acenes possess lower electron and hole reorganization energies, with both best values much lower than 0.1 eV, their BN analogues also have competitive values of reorganization energies, especially for holes for which reorganization energy is also lower than 0.1 eV. On the other hand ΔE(S{sub 1}−T{sub 1}) is much better for BN analogues, having values that indicate that BN analogues are possible applicable for thermally activated delayed fluorescence. - Highlights: • Optoelectronic properties of structures based on higher acenes have been investigated. • Oxidation and reduction potentials together with reorganization energies are calculated. • TADF is analyzed through calculation of ΔE(S{sub 1}−T{sub 1}), which is much better for BN analogues. • Reorganization energies of acenes improve with the increase of number of benzene rings.

  9. Microwave control using a high-gain bias-free optoelectronic switch (United States)

    Freeman, J. L.; Ray, S.; West, D. L.; Thompson, A. G.; Lagasse, M. J.


    We describe an optoelectronic microwave switch that exploits the high optical sensitivity of the air-GaAs interface. With an optical power of 100 micro-W, the switch has an insertion loss of 3.4 dB and an isolation of greater than 20 dB from 0 to 10 GHz. No electrical power is needed.

  10. Integrated optoelectronic probe including a vertical cavity surface emitting laser for laser Doppler perfusion monitoring

    NARCIS (Netherlands)

    Serov, Alexander N.; Nieland, Janharm; Oosterbaan, Sjoerd; Mul, de Frits F.M.; Kranenburg, van Herma; Bekman, Herman H.P.Th.; Steenbergen, Wiendelt


    An integrated optoelectronic probe with small dimensions, for direct-contact laser Doppler blood flow monitoring has been realized. A vertical cavity surface emitting laser (VCSEL), and a chip with photodetectors and all necessary electronics are integrated in a miniature probe head connected to a l

  11. Integrated Optoelectronic Probe Including a Vertical Cavity Surface Emitting Laser for Laser Doppler Perfusion Monitoring

    NARCIS (Netherlands)

    Serov, A.N.; Nieland, J.; Oosterbaan, S.; Steenbergen, W.; Bekman, H.H.P.T.; Mul, F.F.M. de; Kranenburg, H. van


    An integrated optoelectronic probe with small dimensions, for direct-contact laser Doppler blood flow monitoring has been realized. A vertical cavity surface emitting laser (VCSEL), and a chip with photodetectors and all necessary electronics are integrated in a miniature probe head connected to a l

  12. 78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... (United States)


    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International...

  13. How Phase Composition Influences Optoelectronic and Photocatalytic Properties of TiO2

    NARCIS (Netherlands)

    Carneiro, Joana T.; Savenije, Tom J.; Moulijn, Jacob A.; Mul, Guido


    In the present study the ratio of rutile and anatase phases in sol−gel-synthe-sized TiO2 was varied by calcination at temperatures ranging from 500 to 900 °C. Changes in opto-electronic properties were analyzed by time-resolved microwave conductance measurements (TRMC) and evaluated by comparison of

  14. Optical Generation of mm-Wave Signal Through Optoelectronic Phase-Locked Loop

    Institute of Scientific and Technical Information of China (English)

    Madhumita; Bhattacharya; Anuj; Kumar; Saw; Taraprasad; Chattopadhyay


    In this paper, we propose a scheme for the generation of low phase noise tunable mm-wave signal by bearing two lightwaves in a photodiode. These two lightwaves are made phase coherent by an optoelectronic phase locked loop. Calculated mm-wave power at a frequency of 60 GHz is found to be -4 dBm.

  15. Modelling and studies of the spectral response of some optoelectronic components (United States)

    Albino, André; Bortoli, Daniele; Tlemçani, Mouhaydine; Joyce, António


    Solar radiation takes in today's world, an increasing importance. Different devices are used to carry out spectral and integrated measurements of solar radiation. Thus the sensors can be divided into the fallow types: Calorimetric, Thermomechanical, Thermoelectric and Photoelectric. The first three categories are based on components converting the radiation to temperature (or heat) and then into electrical quantity. On the other hand, the photoelectric sensors are based on semiconductor or optoelectronic elements that when irradiated change their impedance or generate a measurable electric signal. The response function of the sensor element depends not only on the intensity of the radiation but also on its wavelengths. The radiation sensors most widely used fit in the first categories, but thanks to the reduction in manufacturing costs and to the increased integration of electronic systems, the use of the photoelectric-type sensors became more interesting. In this work we present a study of the behavior of different optoelectronic sensor elements. It is intended to verify the static response of the elements to the incident radiation. We study the optoelectronic elements using mathematical models that best fit their response as a function of wavelength. As an input to the model, the solar radiation values are generated with a radiative transfer model. We present a modeling of the spectral response sensors of other types in order to compare the behavior of optoelectronic elements with other sensors currently in use.

  16. Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices (United States)

    Du, Xiang

    As the sizes of individual components in electronic and optoelectronic devices approach nano scale, the performance of the devices is often determined by surface properties due to their large surface-to-volume ratio. Surface phenomena have become one of the cornerstones in nanoelectronic industry. For this reason, research on the surface functionalization has been tremendous amount of growth over the past decades, and promises to be an increasingly important field in the future. Surface functionalization, as an effective technique to modify the surface properties of a material through a physical or chemical approach, exhibits great potential to solve the problems and challenges, and modulate the performance of nanomaterials based functional devices. Surface functionalization drives the developments and applications of modern electronic and optoelectronic devices fabricated by nanomaterials. In this thesis, I demonstrate two surface functionalization approaches, namely, surface transfer doping and H2 annealing, to effectively solve the problems and significantly enhance the performance of 2D (single structure black phosphorus (BP) and heterostructure graphene/Si Schottky junction), and quasi-1D (molybdenum trioxide (MoO 3) nanobelt) nanomaterials based functional devices, respectively. In situ photoelectron spectroscopy (PES) measurements were also carried out to explore the interfacial charge transfer occurring at the interface between the nanostructures and doping layers, and the gap states in MoO 3 thin films, which provides the underlying mechanism to understand and support our device measurement results. In the first part of this thesis, I will discuss the first surface functionalization approach, namely, surface transfer doping, to effectively modulate the ambipolar characteristics of 2D few-layer BP flakes based FETs. The ambipolar characteristics of BP transistors were effectively modulated through in situ surface functionalization with cesium carbonate (Cs2

  17. Doping for speed: colloidal nanoparticles for thin-film optoelectronics. (United States)

    Noone, Kevin M; Ginger, David S


    Solution-processable semiconductor materials ranging from conjugated polymers and small organic molecules to colloidal inorganic nanoparticles are being studied for applications in both low-cost solar cells and photodetectors. High-quality thin films of many inorganic semiconductors can be prepared by techniques such as chemical vapor deposition, molecular beam epitaxy, and atomic layer deposition. In contrast, preparing device-quality films of inorganic materials from colloidal solutions can be more difficult due to the challenge of achieving well-defined doping, controlled trap densities, and reproducible surface chemistry. Nevertheless, solution deposition using colloidal precursors is an attractive goal because of the potential for low-cost, large-area processing. In recent years, a great deal of effort has focused on the colloidal synthesis of wide-band-gap metal oxides such as TiO(2), visible-absorbing II-VI compounds such as CdSe, and small-band-gap materials such as PbSe. Much of the work on visible- and IR-absorbing photodetectors has been done on materials containing metals such as Cd and Pb. A new paper in this issue demonstrates photoconductive detectors made from Cu-containing In(2)S(3) nanoplates. The incorporation of Cu into the In(2)S(3) nanoplates leads to a significant decrease in the lifetime of the photoexcited carriers, resulting in significantly faster response times for the photodetectors processed from colloidal solution.

  18. Ion beam synthesis of planar opto-electronic devices (United States)

    Polman, A.; Snoeks, E.; van den Hoven, G. N.; Brongersma, M. L.; Serna, R.; Shin, J. H.; Kik, P.; Radius, E.


    Photonic technology requires the modification and synthesis of new materials and devices for the generation, guiding, switching, multiplexing and amplification of light. This paper reviews how some of these devices may be made using ion beam synthesis. Special attention is paid to the fabrication of erbium-doped optical waveguides.

  19. Opto-electronic response of Spinel SiZn2O4 to a modified Becke-Johnson potential (United States)

    Ali, Manzar; Mohammad, Saleh; Hayatullah; Haneef, Muhammad; Khan, Mahmood; Murtaza, G.


    A first-principles technique capable of describing the nearly excited states of semiconductors and insulators, namely the modified Becke-Johnson (mBJ) potential approximation, is used to investigate the electronic band structure and the optical properties of the spinel oxide SiZn2O4. The band gap predicted using the mBJ approximation is significantly more accurate than those previously proposed theoretical works using the common localized density approximation (LDA) and generalized gradient approximation (GGA). Band-gap-dependent optical parameters, like the dielectric constant, index of refraction, reflectivity and optical conductivity, are calculated and analyzed. The result for the dielectric constant shows that the numerical value of the static dielectric constant, after dropping at the steady rate, becomes less than zero, and the material exhibits a metallic behavior. The refractive index also drops below unity for photons higher than 18 eV, which indicates that the velocities of the incident photons are greater than the velocity of light. However, these phenomena can be explained by the fact that a signal must be transmitted as a wave packet rather than a monochromatic wave. This comprehensive theoretical study of the optoelectronic properties predicts that the materials can be used effectively in the optical devices.

  20. Combined experimental and theoretical assessments of the lattice dynamics and optoelectronics of TaON and Ta3N5

    KAUST Repository

    Nurlaela, Ela


    Presented herein is a detailed discussion of the properties of the lattice dynamic and optoelectronic properties of tantalum(V) oxynitride (TaON) and tantalum(V) nitride (Ta3N5), from experimental and theoretical standpoint. The active Raman and infra red (IR) frequencies of TaON and Ta3N5 were measured using confocal Raman and Fourier Transform Infrared spectroscopies (FTIR) and calculated using the linear response method within the density functional perturbation theory (DFPT). The detailed study leads to an exhaustive description of the spectra, including the symmetry of the vibrational modes. Electronic structures of these materials were computed using DFT within the range-separated hybrid HSE06 exchange–correlation formalism. Electronic and ionic contributions to the dielectric constant tensors of these materials were obtained from DFPT within the linear response method using the PBE functional. Furthermore, effective mass of photogenerated holes and electrons at the band edges of these compounds were computed from the electronic band structure obtained at the DFT/HSE06 level of theory. The results suggest that anisotropic nature in TaON and Ta3N5 is present in terms of dielectric constant and effective masses.

  1. Effects of IIIB transition metals on optoelectronic and magnetic properties of HoMnO3:A first principles study

    Institute of Scientific and Technical Information of China (English)

    H. A. Rahnamaye Aliabad; Battal G. Yalcin


    The optoelectronic and magnetic properties of pure HoMnO3 and Ho0.67T0.33MnO3 (T =La, Y) alloys in hexagonal phase are theoretically investigated by using the first-principles calculations. The investigations are performed by means of the density functional theory through using the spin polarized generalized gradient approximation plus the Hubbard potential (SPGGA+U , Ueff=3 eV). The studied material HoMnO3 exhibits two indirect band gaps:1.58 eV for the spin-up state and 0.72 eV for the spin-down state along the S–G direction within the SPGGA+U approximation. It is found that the band gap of pure HoMnO3 for the spin-up state increases with increasing La and Y dopants. The results show that all of the studied materials have semi-metallic behaviors for the spin-up state and semiconducting character for the spin-down state. The substitutions of La and Y for Ho in HoMnO3 cause the static dielectric constant (ε0) to increase in the x direction but to decrease in the z direction. The calculated optical conductivity spectrum of HoMnO3 in a low energy range is in good agreement with the recent experimental data.

  2. Combined experimental and theoretical assessments of the lattice dynamics and optoelectronics of TaON and Ta3N5 (United States)

    Nurlaela, Ela; Harb, Moussab; del Gobbo, Silvano; Vashishta, Manish; Takanabe, Kazuhiro


    Presented herein is a detailed discussion of the properties of the lattice dynamic and optoelectronic properties of tantalum(V) oxynitride (TaON) and tantalum(V) nitride (Ta3N5), from experimental and theoretical standpoint. The active Raman and infra red (IR) frequencies of TaON and Ta3N5 were measured using confocal Raman and Fourier Transform Infrared spectroscopies (FTIR) and calculated using the linear response method within the density functional perturbation theory (DFPT). The detailed study leads to an exhaustive description of the spectra, including the symmetry of the vibrational modes. Electronic structures of these materials were computed using DFT within the range-separated hybrid HSE06 exchange-correlation formalism. Electronic and ionic contributions to the dielectric constant tensors of these materials were obtained from DFPT within the linear response method using the PBE functional. Furthermore, effective mass of photogenerated holes and electrons at the band edges of these compounds were computed from the electronic band structure obtained at the DFT/HSE06 level of theory. The results suggest that anisotropic nature in TaON and Ta3N5 is present in terms of dielectric constant and effective masses.

  3. Intersubband transitions in III-V semiconductors for novel infrared optoelectronic devices (United States)

    Hossain, Mohammed Imrul

    the mid-infrared range. Our results provide insights in the detail charge transport and optical properties of this design concept. We are also investigating the possibility of inversionless lasing of this type of dual wavelength. My research encompasses the fabrication and processing of nanoscale semiconductor devices on high quality MBE grown wafers from our collaborators. The fabrication includes e-beam evaporation, photolithography, dry and wet etching, rapid thermal annealing, step height analysis, plasma etching, PECVD and also mask designing. The characterization and analysis of the optoelectronic devices is performed through FTIR (Fourier transform infra-red) spectroscopy. The material systems I have directly worked on are Silicon, GaAs/AlGaAs and InGaAs/InAlAs lattice matched to InP. Very recently I have also done some device processing in the InAlN/GaN material system.

  4. Workshop on High Speed/High Frequency Optoelectronics (United States)


    Computer Engine-tring, University of California. Santa Barbara, Jeff Franklin , Varian Associates 11-V Device Center. Santa Clara, CA 95054 Through...Millimeter- Wave Electro-Optic Modulator William B. Bridges and Finbar T. Sheehy California Institute of Technology Pasadena CA 91125 and James H... Schaffner Hughes Research Laboratories Malibu CA 90265 Abstract: The phase velocity mismatch due to material dispersion in traveling-wave LiNbO3 modulators

  5. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

    Directory of Open Access Journals (Sweden)

    Andre F. S. Guedes


    Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

  6. Achieving high performance polymer optoelectronic devices for high efficiency, long lifetime and low fabrication cost (United States)

    Huang, Jinsong

    This thesis described three types of organic optoelectronic devices: polymer light emitting diodes (PLED), polymer photovoltaic solar cell, and organic photo detector. The research in this work focuses improving their performance including device efficiency, operation lifetime simplifying fabrication process. With further understanding in PLED device physics, we come up new device operation model and improved device architecture design. This new method is closely related to understanding of the science and physics at organic/metal oxide and metal oxide/metal interface. In our new device design, both material and interface are considered in order to confine and balance all injected carriers, which has been demonstrated very be successful in increasing device efficiency. We created two world records in device efficiency: 18 lm/W for white emission fluorescence PLED, 22 lm/W for red emission phosphorescence PLED. Slow solvent drying process has been demonstrated to significantly increase device efficiency in poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C 61-butyric acid methyl ester (PCBM) mixture polymer solar cell. From the mobility study by time of flight, the increase of efficiency can be well correlated to the improved carrier transport property due to P3HT crystallization during slow solvent drying. And it is found that, similar to PLED, balanced carrier mobility is essential in high efficient polymer solar cell. There is also a revolution in our device fabrication method. A unique device fabrication method is presented by an electronic glue based lamination process combined with interface modification as a one-step polymer solar cell fabrication process. It can completely skip the thermal evaporation process, and benefit device lifetime by several merits: no air reactive. The device obtained is metal free, semi-transparent, flexible, self-encapsulated, and comparable efficiency with that by regular method. We found the photomultiplication (PM) phenomenon in C

  7. An optoelectronic circuit with a light source, an optical waveguide and a sensor all on silicon: Results and analysis of a novel system (United States)

    Alarcón-Salazar, J.; Zaldívar-Huerta, I. E.; Aceves-Mijares, M.


    A full analysis of an optoelectronic circuit on silicon composed by a light emitter, an optical waveguide and a photodetector is achieved. The light emitter is based on silicon rich oxide multilayers. The multilayer structure exhibits an electroluminescence spectra from 400 nm to 800 nm. Light emitter and optical waveguide are located next to each other in a novel topology that allows the direct impact of the photons to the depletion layer of the sensor, increasing the efficiency. An optical rib-type waveguide and multi-modal, using Si3N4 and SiO2 as core and cladding materials, is considered to propagate the light from the light emitter to the sensor. Analysis of the waveguide reveals that the optimal height is 1.25 μm, when a width of 5 μm and a fractional height of 0.8 are used. A relative transmittance of the optical waveguide shows that the propagated light maintains the wide spectrum. A planar diode is used as photodetector. The proposal-integrated structure shows that light impinges directly on the depleted zone, improving detection and performance of the diode. Finally, a description of the novel optoelectronic circuit is addressed.

  8. Evaluation of the chemical, electronic and optoelectronic properties of {gamma}-CuCl thin films and their fabrication on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lucas, F O [Nanomaterials Processing Laboratory, Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); Mitra, A [Nanomaterials Processing Laboratory, Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); McNally, P J [Nanomaterials Processing Laboratory, Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); Daniels, S [Nanomaterials Processing Laboratory, Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); Bradley, A L [Semiconductor Photonics Group, Physics Department, Trinity College, Dublin 2 (Ireland); Taylor, D M [Polymer Electronics Research Group, School of Electronic Engineering, University of Wales, Bangor, Gwynedd, LL57 1UT (United Kingdom); Proskuryakov, Y Y [Durham Centre for Renewable Energy, Department of Physics, Durham University, South Road, Durham, DH1 3LE (United Kingdom); Durose, K [Durham Centre for Renewable Energy, Department of Physics, Durham University, South Road, Durham, DH1 3LE (United Kingdom); Cameron, D C [Advanced Surface Technology Research Laboratory (ASTRaL), Lappeenranta University of Technology, PO Box 181, Mikkeli 50101 (Finland)


    CuCl is a I-VII semiconductor material with a direct band gap of {approx}3.4 eV. It exhibits a zincblende structure ({gamma}-phase) at low temperatures, up to {approx}680 K. Unlike GaN, ZnO and related materials, CuCl has a relatively low lattice mismatch with Si (<0.4%) and a large excitonic binding energy ({approx}190 meV). This suggests the possibility of the fabrication of excitonic-based blue/UV optoelectronic devices on Si with relatively low threading dislocation densities. In this study, CuCl has been deposited and examined as a candidate material for the fabrication of these devices. X-ray diffraction (XRD) measurements confirmed that the deposited films were preferentially oriented in the (1 1 1) plane. Room temperature photoluminescence measurements reveal a strong Z{sub 3} free exciton peak (3.232 eV). Both steady state dc and ac impedance spectroscopy experiments suggested that the deposited CuCl is a mixed ionic-electronic semiconductor material. An electronic conductivity of the order of 2.3 x 10{sup -7} S cm{sup -1} was deduced to be in coexistence with Cu{sup +} ionic conductivity using irreversible electrodes (Au), while a total conductivity of the order of 6.5 x 10{sup -7} S cm{sup -1} was obtained using reversible electrodes (Cu) at room temperature. Further to this, we have identified some of the challenges in fabricating an optoelectronic device based on a CuCl/Si hybrid platform and propose some possible solutions.

  9. Synthesis and optoelectronic properties of chemically modified bi-fluorenylidenes


    Wielopolski, Mateusz; Marszalek, Magdalena; Brunetti, Fulvio G.; Joly, Damien; Calbo, Joaquín; Aragó, Juan; Moser, Jacques-E.; Humphry-Baker, Robin; Zakeeruddin, Shaik M.; Delgado, Juan Luis; Grätzel, Michael; Ortí, Enrique; Martín,Nazario


    The development of new light harvesting materials is a key issue for the progress of the research on organic & hybrid photovoltaics. Here, we report a new class of organic sensitizers based on the bi-fluorenylidene moiety as p-linker within the donor–p-linker–acceptor (D–p–A) scheme. The new dyes are endowed with electron donor and electron acceptor units at strategic positions in order to improve their electronic and light-harvesting properties. The comprehensive study of these compounds thr...

  10. Optoelectronic devices based on graded bandgap structures utilising electroplated semiconductors



    The main aim of the work presented in this thesis is to develop low-cost multi-junction graded bandgap solar cells using electroplated semiconductors. The semiconductor materials explored in this research are CdSe, ZnTe, CdS, CdMnTe and CdTe thin films. These layers were characterised for their structural, compositional, morphological, optical, and electrical features using XRD, Raman spectroscopy, EDX, SEM, UV-Vis spectroscopy, PEC cell, C-V, I-V and UPS measurement techniques respectively. ...

  11. Adaptive optoelectronic camouflage systems with designs inspired by cephalopod skins. (United States)

    Yu, Cunjiang; Li, Yuhang; Zhang, Xun; Huang, Xian; Malyarchuk, Viktor; Wang, Shuodao; Shi, Yan; Gao, Li; Su, Yewang; Zhang, Yihui; Xu, Hangxun; Hanlon, Roger T; Huang, Yonggang; Rogers, John A


    Octopus, squid, cuttlefish, and other cephalopods exhibit exceptional capabilities for visually adapting to or differentiating from the coloration and texture of their surroundings, for the purpose of concealment, communication, predation, and reproduction. Long-standing interest in and emerging understanding of the underlying ultrastructure, physiological control, and photonic interactions has recently led to efforts in the construction of artificial systems that have key attributes found in the skins of these organisms. Despite several promising options in active materials for mimicking biological color tuning, existing routes to integrated systems do not include critical capabilities in distributed sensing and actuation. Research described here represents progress in this direction, demonstrated through the construction, experimental study, and computational modeling of materials, device elements, and integration schemes for cephalopod-inspired flexible sheets that can autonomously sense and adapt to the coloration of their surroundings. These systems combine high-performance, multiplexed arrays of actuators and photodetectors in laminated, multilayer configurations on flexible substrates, with overlaid arrangements of pixelated, color-changing elements. The concepts provide realistic routes to thin sheets that can be conformally wrapped onto solid objects to modulate their visual appearance, with potential relevance to consumer, industrial, and military applications.

  12. Piezoelectric resonance enhanced microwave and optoelectronic interactive devices (United States)

    McIntosh, Robert

    Electro-optic (EO) devices that modulate optical signals by electric fields are an integrative part of the photonics industry and device optimization is an important area of research. As applications move to large bandwidth and higher frequency, low electro-optic effects and the requirement for large dimension become restrictive for microwave-optical devices. Both experimental and computational evaluations indicate that strain and polarization distribution have a significant impact on electromagnetic wave propagation resulting from a resonant structure; however, no systematic study or fundamental understandings are available. This dissertation research has been carried out to study and further develop the subject of piezoelectric resonance enhanced electro-acoustic-optic process, in order to improve the sensitivity and efficiency of electro-optic sensors and to explore novel applications. Many finite element models have been constructed for evaluating the mechanisms of the phenomena and the effectiveness of the device structure. The enhancement in transmission is found to be directly related to the strain-coupled local polarization. At piezoelectric resonance oscillating dipoles or local polarizations become periodic in the material and have the greatest impact on transmission. Results suggest that the induced charge distribution by a piezoelectric material at certain resonant frequencies is effective for aiding or impeding the transmission of a propagating wave. The behavior of both piezoelectric-defined (or intrinsic piezoelectric materials) and engineered periodic structures are reported. The piezoelectric response of the surface displacement of samples is investigated using an ultra-high frequency laser Doppler vibrometer. A two dimensional view of the surface is obtained and the surface displacement, velocity and acceleration are compared to the electro-optic response under the resonant condition. A study of the acousto-optic (AO) effect in a family of oxide

  13. Two-dimensional gold nanoparticle arrays. A platform for molecular optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Mangold, Markus Andreas


    In my research, I study the optoelectronic properties of two-dimensional, hexagonal gold nanoparticle arrays formed by self-assembly. When the nanoparticle arrays are embedded in a matrix of alkane thiols, the photoresponse is dominated by a bolometric conductance increase. At room temperature, I observe a strong enhancement of the bolometric photoconductance when the surface plasmon resonance of the nanoparticles is excited. At cryogenic temperatures, the bolometric conductance enhancement leads to a redistribution of the potential landscape which dominates the optoelectronic response of the nanoparticle arrays. When optically active oligo(phenylene vinylene) (OPV) molecules are covalently bound to the nanoparticles, an increased photoconductance due to the resonant excitation of the OPV is observed. The results suggest that the charge carriers, which are resonantly excited in the OPV molecules, directly contribute to the current flow through the nanoparticle arrays. Thus, the conductance of OPV in its excited state is measured in the presented experiments. (orig.)

  14. Preserving π-conjugation in covalently functionalized carbon nanotubes for optoelectronic applications (United States)

    Setaro, Antonio; Adeli, Mohsen; Glaeske, Mareen; Przyrembel, Daniel; Bisswanger, Timo; Gordeev, Georgy; Maschietto, Federica; Faghani, Abbas; Paulus, Beate; Weinelt, Martin; Arenal, Raul; Haag, Rainer; Reich, Stephanie


    Covalent functionalization tailors carbon nanotubes for a wide range of applications in varying environments. Its strength and stability of attachment come at the price of degrading the carbon nanotubes sp2 network and destroying the tubes electronic and optoelectronic features. Here we present a non-destructive, covalent, gram-scale functionalization of single-walled carbon nanotubes by a new [2+1] cycloaddition. The reaction rebuilds the extended π-network, thereby retaining the outstanding quantum optoelectronic properties of carbon nanotubes, including bright light emission at high degree of functionalization (1 group per 25 carbon atoms). The conjugation method described here opens the way for advanced tailoring nanotubes as demonstrated for light-triggered reversible doping through photochromic molecular switches and nanoplasmonic gold-nanotube hybrids with enhanced infrared light emission.

  15. Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics. (United States)

    Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei


    Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

  16. Non-blinking semiconductor colloidal quantum dots for biology, optoelectronics and quantum optics. (United States)

    Spinicelli, Piernicola; Mahler, Benoit; Buil, Stéphanie; Quélin, Xavier; Dubertret, Benoit; Hermier, Jean-Pierre


    Twinkle, twinkle: The blinking of semiconductor colloidal nanocrystals is the main inconvenience of these bright nanoemitters. There are various approaches for obtaining non-blinking nanocrystals, one of which is to grow a thick coat of CdS on the CdSe core (see picture). Applications of this method in the fields of optoelectronic devices, biologic labelling and quantum information processing are discussed.The blinking of semiconductor colloidal nanocrystals is the main inconvenience of these bright nanoemitters. For some years, research on this phenomenon has demonstrated the possibility to progress beyond this problem by suppressing this fluorescence intermittency in various ways. After a brief overview on the microscopic mechanism of blinking, we review the various approaches used to obtain non-blinking nanocrystals and discuss the commitment of this crucial improvement to applications in the fields of optoelectronic devices, biologic labelling and quantum information processing.

  17. Optoelectronic studies on heterocyclic bases of deoxyribonucleic acid for DNA photonics. (United States)

    El-Diasty, Fouad; Abdel-Wahab, Fathy


    The optoelectronics study of large molecules, particularly π-stacking molecules, such as DNA is really an extremely difficult task. We perform first electronic structure calculations on the heterocyclic bases of 2'-deoxyribonucleic acid based on Lorentz-Fresnel dispersion theory. In the UV-VIS range of spectrum, many of the optoelectronic parameters for DNA four bases namely adenine, guanine, cytosine and thymine are calculated and discussed. The results demonstrate that adenine has the highest hyperpolarizability, whereas thymine has the lowest hyperpolarizability. Cytosine has the lower average oscillator energy and the higher lattice energy. Thymine infers the most stable nucleic base with the lower phonon energy. Thymine also has the highest average oscillator energy and the lower lattice energy. Moreover, the four nucleic acid bases have large band gap energies less than 5 eV with a semiconducting behavior. Guanine shows the smallest band gap and the highest Fermi level energy, whereas adenine elucidates the highest band gap energy.

  18. Opto-Electronically Efficient Conjugated Polymers by Stress-Induced Molecular Constraints (United States)


    Final Report for AOARD Grant FA2386-11-1-4055 Opto-Electronically Efficient Conjugated Polymers by Stress-Induced Molecular Constraints... polymers . The effects of molecular flows triggered in thin film dewetting were further studied to reveal the mechanisms of chain increase. Finally, the efficiency enhancement can be produced in solid films of conjugated polymers using simple imprints under good control

  19. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    KAUST Repository

    Wan, Shanhong


    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  20. Architectural and performance considerations for a 10(7)-instruction/sec optoelectronic central processing unit. (United States)

    Arrathoon, R; Kozaitis, S


    Architectural considerations for a multiple-instruction, single-data-based optoelectronic central processing unit operating at 10(7) instructions per second are detailed. Central to the operation of this device is a giant fiber-optic content-addressable memory in a programmable logic array configuration. The design includes four instructions and emphasizes the fan-in and fan-out capabilities of optical systems. Interconnection limitations and scaling issues are examined.

  1. Positioning Error of Optoelectronic Telescope Compensated by Bipolar PWM Driving Mode

    Institute of Scientific and Technical Information of China (English)

    LI Xiao-yan; ZHOU Hui; FU Hong; HOU Yun-hai


    The optoelectronic telescope has two sets of control systems: azimuth one and elevation one, and both are driven by PWM power amplifier with high efficiency and wide speed regulation range. The diagram of the azimuth control system is demonstrated, the nonlinear factors is analyzed at low speed, and some related experiments are carried out. The results show that the positioning error with unipolar is 86 codes(106.21″),while 18 codes (22. 23″) is with bipolar PWM driver.

  2. Design and test of optoelectronic system of alignment control based on CCD camera (United States)

    Anisimov, A. G.; Gorbachyov, A. A.; Krasnyashchikh, A. V.; Pantushin, A. N.; Timofeev, A. N.


    In this work, design, implementation and test of a system intended for positioning of the elements of turbine units relative to the line of shaft with high precision, are discussed. A procedure of the conversion of coordinates from the instrument system into the system connected with the practical position of the axis of turbine has been devised. It is shown that optoelectronic systems of aligment built by autoreflexive scheme can be used for high precision measurements.

  3. Self Assembled Nano-Photonic Devices Derived from Marine DNA for Opto-Electronic Applications (United States)


    SPIE., 5724, 224-233 (2005) 13. A. Watanuki , J. Yoshida, S. Kobayashi, H. Ikeda and N. Ogata, 12 Proceedings of SPIE., 5724, 234-241 (2005) 14...J. Yoshida, A. Watanuki , S. Kobayashi, H. Ikeda and N. Ogata, Tech. Digest, 10th Optoelectronics and Communication Conference (OECC2005), 342-343...optical waveguides fabricated with DNA”, Proc. SPIE, 5724, 224-233, 2005. 5. A. Watanuki , J. Yoshida, S. Kobayashi, H. Ikeda and N. Ogata: “Optical

  4. Mechanics of advanced functional materials

    CERN Document Server

    Wang, Biao


    Mechanics of Advanced Functional Materials emphasizes the coupling effect between the electric and mechanical field in the piezoelectric, ferroelectric and other functional materials. It also discusses the size effect on the ferroelectric domain instability and phase transition behaviors using the continuum micro-structural evolution models. Functional materials usually have a very wide application in engineering due to their unique thermal, electric, magnetic, optoelectronic, etc., functions. Almost all the applications demand that the material should have reasonable stiffness, strength, fracture toughness and the other mechanical properties. Furthermore, usually the stress and strain fields on the functional materials and devices have some important coupling effect on the functionality of the materials. Much progress has been made concerning the coupling electric and mechanical behaviors such as the coupled electric and stress field distribution in piezoelectric solids, ferroelectric domain patterns in ferr...

  5. Piezotronics and piezo-phototronics for adaptive electronics and optoelectronics (United States)

    Wu, Wenzhuo; Wang, Zhong Lin


    Low-dimensional piezoelectric semiconductor nanomaterials, such as ZnO and GaN, have superior mechanical properties and can be integrated into flexible devices that can be subjected to large strain. More importantly, the coupling between piezoelectric polarization and semiconductor properties (for example, electronic transport and photoexcitation) in these materials gives rise to unprecedented device characteristics. This has increased research interest in the emerging fields of piezotronics and piezo-phototronics, which offer new means of manipulating charge-carrier transport, generation, recombination or separation in the controlled operation of flexible devices through the application of external mechanical stimuli. We review the recent progress in advancing our fundamental understanding and in realizing practical applications of piezotronics and piezo-phototronics, and provide an in-depth discussion of future research directions.

  6. Study of a thiophene-based polymer for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Cheylan, S. [ICFO, Institut de Ciencies Fotoniques, Edificio NEXUS II, c. Jordi Girona 29, 08034 Barcelona (Spain)]. E-mail:; Fraleoni-Morgera, A. [Department of Industrial and Materials Chemistry, University of Bologna, V. Risorgimento 4, 40136 Bologna (Italy); Puigdollers, J. [Departamento de Ingenieria Electronica, Universidad Politecnica de Cataluna, UPC, Campus Nord Edifici C4, c/ Jordi Girona 1-3, 08034 Barcelona (Spain); Voz, C. [Departamento de Ingenieria Electronica, Universidad Politecnica de Cataluna, UPC, Campus Nord Edifici C4, c/ Jordi Girona 1-3, 08034 Barcelona (Spain); Setti, L. [Department of Industrial and Materials Chemistry, University of Bologna, V. Risorgimento 4, 40136 Bologna (Italy); Alcubilla, R. [Departamento de Ingenieria Electronica, Universidad Politecnica de Cataluna, UPC, Campus Nord Edifici C4, c/ Jordi Girona 1-3, 08034 Barcelona (Spain); Badenes, G. [ICFO, Institut de Ciencies Fotoniques, Edificio NEXUS II, c. Jordi Girona 29, 08034 Barcelona (Spain); Costa-Bizzarri, P. [Department of Industrial and Materials Chemistry, University of Bologna, V. Risorgimento 4, 40136 Bologna (Italy); Lanzi, M. [Department of Industrial and Materials Chemistry, University of Bologna, V. Risorgimento 4, 40136 Bologna (Italy)


    A thiophene-based conjugated polymer bearing a cyano group (-CN) as a side chain substituent was successfully synthesized. The polymer evidences an excellent film ability from various organic solvents as well as an enhanced photoluminescence. The polymer has been characterized optically (Fourier Transformed Infrared spectroscopy, absorption and photoluminescence) in solution and in film, while X-ray diffraction measurements (XRD) of thin films were performed to investigate its bulk morphological features. From the absorption edge of the spectrum of a thin polymer film, the optical band gap of the polymer is estimated to be 2.0 eV, which corresponds to orange emission. Furthermore, a single layer light emitting diode (LED) was fabricated. The device produced bright stable electroluminescence at room temperature. All of the results indicate that this polymer is a promising emissive material for application in polymeric LEDs.

  7. Low-cost optoelectronic devices to measure velocity of detonation (United States)

    Chan, Edwin M.; Lee, Vivian; Mickan, Samuel P.; Davies, Phil J.


    Velocity of Detonation (VoD) is an important measured characteristic parameter of explosive materials. When new explosives are developed, their VoD must be determined. Devices used to measure VoD are always destroyed in the process, however replacing these devices represents a considerable cost in the characterisation of new explosives. This paper reports the design and performance of three low-cost implementations of a point-to-point VoD measurement system, two using optical fibre and a third using piezoelectric polymers (PolyVinyliDine Flouride, PVDF). The devices were designed for short charges used under controlled laboratory conditions and were tested using the common explosive 'Composition B'. These new devices are a fraction of the cost of currently available VoD sensors and show promise in achieving comparable accuracy. Their future development will dramatically reduce the cost of testing and aid the characterisation of new explosives.

  8. Transparent Electrodes with Nanotubes and Graphene for Printed Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Marcin Słoma


    Full Text Available We report here on printed electroluminescent structures containing transparent electrodes made of carbon nanotubes and graphene nanoplatelets. Screen-printing and spray-coating techniques were employed. Electrodes and structures were examined towards optical parameters using spectrophotometer and irradiation meter. Electromechanical properties of transparent electrodes are exterminated with cyclical bending test. Accelerated aging process was conducted according to EN 62137 standard for reliability tests of electronics. We observed significant negative influence of mechanical bending on sheet resistivity of ITO, while resistivity of nanotube and graphene based electrodes remained stable. Aging process has also negative influence on ITO based structures resulting in delamination of printed layers, while those based on carbon nanomaterials remained intact. We observe negligible changes in irradiation for structures with carbon nanotube electrodes after accelerated aging process. Such materials demonstrate a high application potential in general purpose electroluminescent devices.

  9. Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration


    Rucavado, Esteban; Jeangros, Quentin; Hessler-Wyser, Aïcha; Morales-Masis, Monica; Ballif, Christophe; Urban, Daniel F.; Holovský, Jakub; Remes, Zdenek; Duchamp, Martial; Landucci, Federica; Dunin-Borkowski, Rafal; Körner, Wolfgang; Elsässer, Christian


    The link between sub-bandgap states and optoelectronic properties is investigated for amorphous zinc tin oxide (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples were annealed up to 500 °C in oxidizing, neutral, and reducing atmospheres before characterizing their structural and optoelectronic properties by photothermal deflection spectroscopy, near-infrared-visible UV spectrophotometry, Hall effect, Rutherford backscattering, hydrogen forward scattering and transmission electron mi...

  10. InP-Based Heterostructure Design and Growth for Semiconductor Nanomembrane Optoelectronics on Si and on Flexible Substrates (United States)


    AFRL-AFOSR-UK-TR-2014-0015 InP-based heterostructure design and growth for semiconductor nanomembrane optoelectronics on Si and...TITLE AND SUBTITLE InP-based heterostructure design and growth for semiconductor nanomembrane optoelectronics on Si and on flexible substrates...on the realization of ultracompact microcavity lasers directly integrated on silicon. Using a stamp-assisted transfer-printing technology, silicon

  11. Direct anisotropic growth of CdS nanocrystals in thermotropic liquid crystal templates for heterojunction optoelectronics. (United States)

    Yuan, Kai; Chen, Lie; Chen, Yiwang


    The direct growth of CdS nanocrystals in functional solid-state thermotropic liquid crystal (LC) small molecules and a conjugated LC polymer by in situ thermal decomposition of a single-source cadmium xanthate precursor to fabricate LC/CdS hybrid nanocomposites is described. The influence of thermal annealing temperature of the LC/CdS precursors upon the nanomorphology, photophysics, and optoelectronic properties of the LC/CdS nanocomposites is systematically studied. Steady-state PL and ultrafast emission dynamics studies show that the charge-transfer rates are strongly dependent on the thermal annealing temperature. Notably, annealing at liquid-crystal state temperature promotes a more organized nanomorphology of the LC/CdS nanocomposites with improved photophysics and optoelectronic properties. The results confirm that thermotropic LCs can be ideal candidates as organization templates for the control of organic/inorganic hybrid nanocomposites at the nanoscale level. The results also demonstrate that in situ growth of semiconducting nanocrystals in thermotropic LCs is a versatile route to hybrid organic/inorganic nanocomposites and optoelectronic devices.

  12. Accuracy and feasibility of optoelectronic sensors for weed mapping in wide row crops. (United States)

    Andújar, Dionisio; Ribeiro, Ángela; Fernández-Quintanilla, César; Dorado, José


    The main objectives of this study were to assess the accuracy of a ground-based weed mapping system that included optoelectronic sensors for weed detection, and to determine the sampling resolution required for accurate weed maps in maize crops. The optoelectronic sensors were located in the inter-row area of maize to distinguish weeds against soil background. The system was evaluated in three maize fields in the early spring. System verification was performed with highly reliable data from digital images obtained in a regular 12 m × 12 m grid throughout the three fields. The comparison in all these sample points showed a good relationship (83% agreement on average) between the data of weed presence/absence obtained from the optoelectronic mapping system and the values derived from image processing software ("ground truth"). Regarding the optimization of sampling resolution, the comparison between the detailed maps (all crop rows with sensors separated 0.75 m) with maps obtained with various simulated distances between sensors (from 1.5 m to 6.0 m) indicated that a 4.5 m distance (equivalent to one in six crop rows) would be acceptable to construct accurate weed maps. This spatial resolution makes the system cheap and robust enough to generate maps of inter-row weeds.

  13. The Search for Sub-Bandgap Optoelectronic Response in Silicon Hyperdoped with Gold (United States)

    Mailoa, Jonathan; Akey, Austin; Mathews, Jay; Hutchinson, David; Simmons, Christie; Sullivan, Joseph; Winkler, Mark; Recht, Dan; Persans, Peter; Warrender, Jeffrey; Aziz, Michael; Buonassisi, Tonio


    Deep-level dopants have been long known as the lifetime-killer in microelectronic devices. Nevertheless, it has been shown that deep-level donor can facilitate strong absorption of light with energy below the semiconductor bandgap. Due to this strong sub-bandgap absorption, it is possible to engineer silicon devices exhibiting sub-bandgap optoelectronic response, such as silicon-based infrared photodetectors and intermediate-band solar cells. In this work, we show the optoelectronic response of silicon doped with a gold concentration surpassing the equilibrium solubility limit (gold-hyperdoped silicon, Au:Si). We fabricated Au:Si by ion implantation followed by nanosecond pulse laser melting, achieving a gold dopant concentration of over 1019 cm-3. UV-VIS spectrophotometry was performed to measure sub-bandgap light absorption in the Au:Si layer. Our samples with the highest gold concentration have 10-15% absorption of sub-bandgap light. We will present and discuss the sub-bandgap optoelectronic response of this gold-doped silicon.

  14. Accuracy and Feasibility of Optoelectronic Sensors for Weed Mapping in Wide Row Crops

    Directory of Open Access Journals (Sweden)

    José Dorado


    Full Text Available The main objectives of this study were to assess the accuracy of a ground-based weed mapping system that included optoelectronic sensors for weed detection, and to determine the sampling resolution required for accurate weed maps in maize crops. The optoelectronic sensors were located in the inter-row area of maize to distinguish weeds against soil background. The system was evaluated in three maize fields in the early spring. System verification was performed with highly reliable data from digital images obtained in a regular 12 m × 12 m grid throughout the three fields. The comparison in all these sample points showed a good relationship (83% agreement on average between the data of weed presence/absence obtained from the optoelectronic mapping system and the values derived from image processing software (“ground truth”. Regarding the optimization of sampling resolution, the comparison between the detailed maps (all crop rows with sensors separated 0.75 m with maps obtained with various simulated distances between sensors (from 1.5 m to 6.0 m indicated that a 4.5 m distance (equivalent to one in six crop rows would be acceptable to construct accurate weed maps. This spatial resolution makes the system cheap and robust enough to generate maps of inter-row weeds.

  15. Micromanipulation of InP lasers with optoelectronic tweezers for integration on a photonic platform. (United States)

    Juvert, Joan; Zhang, Shuailong; Eddie, Iain; Mitchell, Colin J; Reed, Graham T; Wilkinson, James S; Kelly, Anthony; Neale, Steven L


    The integration of light sources on a photonic platform is a key aspect of the fabrication of self-contained photonic circuits with a small footprint that does not have a definitive solution yet. Several approaches are being actively researched for this purpose. In this work we propose optoelectronic tweezers for the manipulation and integration of light sources on a photonic platform and report the positional and angular accuracy of the micromanipulation of standard Fabry-Pérot InP semiconductor laser die. These lasers are over three orders of magnitude bigger in volume than any previously assembled with optofluidic techniques and the fact that they are industry standard lasers makes them significantly more useful than previously assembled microdisk lasers. We measure the accuracy to be 2.5 ± 1.4 µm and 1.4 ± 0.4° and conclude that optoelectronic tweezers are a promising technique for the micromanipulation and integration of optoelectronic components in general and semiconductor lasers in particular.

  16. Peptides and polypeptides as scaffolds for optoelectronics and biomaterials applications (United States)

    Charati, Manoj B.

    Peptides and polypeptides are emerging as a new class of biomaterials due to their unique structural, physiochemical, mechanical, and biological properties. The development of peptide and protein-based biomaterials is driven by the convergence of convenient techniques for peptide/protein engineering and its importance in applications as smart biomaterials. The thesis is divided in two parts; the first part highlights the importance of incorporation of non-natural amino acids into peptides and proteins. In particular, incorporation on p-bromophenylalanine in short alpha-helical peptide templates to control the association of chromophores is discussed. In the second part, design of a multi-component, biocompatible polypeptide with superior elasticity is discussed. Part 1. Novel peptide templates to control association of chromophores. Tailor made peptide and protein materials have many versatile applications, as both conformation and functional group position can be controlled. Such control may have intriguing applications in the development of hybrid materials for electroactive applications. A critical need in fabricating devices from organic semiconducting materials is to achieve control over the conformation and distance between two conjugated chains. Controlling chromophore spacing and orientation with required precision over nanometer length scale poses a greater challenge. Here we propose a peptide based template to control the alignment of the methylstilbene and Oxa-PPV chromophores with desired orientations and spacing. The hybrid peptides were characterized via CD, exciton coupled CD, 1H NMR and photoluminescence experiments. It is observed that slight change in the orientation of molecules has pronounced effect on the photo-physical behavior of the molecules. Characterization of the hybrid peptides via circular dichroism (CD) confirmed the helical character of the designed peptides and indicated that inclusion of non-natural amino acids has significant

  17. Charge Carriers and Excited States in Supramolecular Materials

    NARCIS (Netherlands)

    Patwardhan, S.


    The field of organic electronics has been thriving for the last decades due to growing commercial interest. One of the advantages of using organic materials as semiconductors is the possibility to tune their optoelectronic properties by modifying the chemical structure and organization of the buildi

  18. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    CERN Document Server

    Li, Simon


    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  19. Phase transition and optoelectronic properties of MgH2 (United States)

    Nayak, Vikas; Verma, U. P.


    In this article, structural and electronic properties of MgH2 have been studied. The aim behind this study was to find out the ground state crystal structure of MgH2. For the purpose, density functional theory (DFT)-based full-potential linearized augmented plane wave (FP-LAPW) calculations have been performed in three different space groups: P42/mnm (α-MgH2), Pa3 (β-MgH2) and Pbcn (γ-MgH2). It has been found that the ground state structure of MgH2 is α-MgH2. The present study shows that α-MgH2 transforms into γ-MgH2 at a pressure of 0.41 GPa. After further increase in pressure, γ-MgH2 transforms into β-MgH2 at a pressure of 3.67 GPa. The obtained results are in good agreement with previously reported experimental data. In all the studied phases, the behavior of MgH2 is insulating and its optical conductivity is around 6.0 eV. The α-MgH2 and γ-MgH2 are anisotropic materials while β-MgH2 is isotropic in nature.

  20. Effect of Coulomb interactions and Hartree-Fock exchange on structural, elastic, optoelectronic and magnetic properties of Co2MnSi Heusler: A comparative study (United States)

    Lantri, T.; Bentata, S.; Bouadjemi, B.; Benstaali, W.; Bouhafs, B.; Abbad, A.; Zitouni, A.


    Using the first-principle calculations, we have investigated the structural, elastic, optoelectronic and magnetic properties of Co2MnSi Heusler alloy. Based on the density functional theory (DFT) and hiring the full-potential linearized augmented plane wave (FP-LAPW) method, we have used five approaches: the Hybrid on-site exact exchange, the Local Spin Density Approximation (LSDA), the LSDA+U, the Generalized Gradient Approximation GGA and GGA+U; where the Hubbard on-site Coulomb interaction correction U is calculated by constraint local density approximation for Co and Mn atoms. Our results show that the highly-ordered Co2MnSi alloy is a ductile, stiff and anisotropic material. It has a half-metallic ferromagnetic character with an integer magnetic moment of 5 μB which is in good agreement with the Slater-Pauling rule.