WorldWideScience

Sample records for optoelectronic interconnect technology

  1. Optoelectronic interconnects for 3D wafer stacks

    Science.gov (United States)

    Ludwig, David; Carson, John C.; Lome, Louis S.

    1996-01-01

    Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

  2. Integrated optoelectronic materials and circuits for optical interconnects

    International Nuclear Information System (INIS)

    Hutcheson, L.D.

    1988-01-01

    Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected

  3. Demonstration of an optoelectronic interconnect architecture for a parallel modified signed-digit adder and subtracter

    Science.gov (United States)

    Sun, Degui; Wang, Na-Xin; He, Li-Ming; Weng, Zhao-Heng; Wang, Daheng; Chen, Ray T.

    1996-06-01

    A space-position-logic-encoding scheme is proposed and demonstrated. This encoding scheme not only makes the best use of the convenience of binary logic operation, but is also suitable for the trinary property of modified signed- digit (MSD) numbers. Based on the space-position-logic-encoding scheme, a fully parallel modified signed-digit adder and subtractor is built using optoelectronic switch technologies in conjunction with fiber-multistage 3D optoelectronic interconnects. Thus an effective combination of a parallel algorithm and a parallel architecture is implemented. In addition, the performance of the optoelectronic switches used in this system is experimentally studied and verified. Both the 3-bit experimental model and the experimental results of a parallel addition and a parallel subtraction are provided and discussed. Finally, the speed ratio between the MSD adder and binary adders is discussed and the advantage of the MSD in operating speed is demonstrated.

  4. Optoelectronic circuits in nanometer CMOS technology

    CERN Document Server

    Atef, Mohamed

    2016-01-01

    This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

  5. Opto-Electronic and Interconnects Hierarchical Design Automation System (OE-IDEAS)

    National Research Council Canada - National Science Library

    Turowski, M

    2004-01-01

    As microelectronics technology continues to advance, the associated electrical interconnection technology is not likely to keep pace, due to many parasitic effects appearing in metallic interconnections...

  6. Universal Interconnection Technology Workshop Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Sheaffer, P.; Lemar, P.; Honton, E. J.; Kime, E.; Friedman, N. R.; Kroposki, B.; Galdo, J.

    2002-10-01

    The Universal Interconnection Technology (UIT) Workshop - sponsored by the U.S. Department of Energy, Distributed Energy and Electric Reliability (DEER) Program, and Distribution and Interconnection R&D - was held July 25-26, 2002, in Chicago, Ill., to: (1) Examine the need for a modular universal interconnection technology; (2) Identify UIT functional and technical requirements; (3) Assess the feasibility of and potential roadblocks to UIT; (4) Create an action plan for UIT development. These proceedings begin with an overview of the workshop. The body of the proceedings provides a series of industry representative-prepared papers on UIT functions and features, present interconnection technology, approaches to modularization and expandability, and technical issues in UIT development as well as detailed summaries of group discussions. Presentations, a list of participants, a copy of the agenda, and contact information are provided in the appendices of this document.

  7. Operational parameters of an opto-electronic neural network employing fixed planar holographic interconnects

    Science.gov (United States)

    Keller, P. E.; Gmitro, A. F.

    1993-07-01

    A prototype neutral network system of multifaceted, planar interconnection holograms and opto-electronic neurons is analyzed. This analysis shows that a hologram fabricated with electron-beam lithography has the capacity to connect 6700 neuron outputs to 6700 neuron inputs, and that, the encoded synaptic weights have a precision of approximately 5 bits. Higher interconnection densities can be achieved by accepting a lower synaptic weight accuracy. For systems employing laser diodes at the outputs of the neurons, processing rates in the range of 45 to 720 trillion connections per second can potentially be achieved.

  8. Optoelectronics technologies for Virtual Reality systems

    Science.gov (United States)

    Piszczek, Marek; Maciejewski, Marcin; Pomianek, Mateusz; Szustakowski, Mieczysław

    2017-08-01

    Solutions in the field of virtual reality are very strongly associated with optoelectronic technologies. This applies to both process design and operation of VR applications. Technologies such as 360 cameras and 3D scanners significantly improve the design work. What is more, HMD displays with high field of view or optoelectronic Motion Capture systems and 3D cameras guarantee an extraordinary experience in immersive VR applications. This article reviews selected technologies from the perspective of their use in a broadly defined process of creating and implementing solutions for virtual reality. There is also the ability to create, modify and adapt new approaches that show team own work (SteamVR tracker). Most of the introduced examples are effectively used by authors to create different VR applications. The use of optoelectronic technology in virtual reality is presented in terms of design and operation of the system as well as referring to specific applications. Designers and users of VR systems should take a close look on new optoelectronics solutions, as they can significantly contribute to increased work efficiency and offer completely new opportunities for virtual world reception.

  9. Two-dimensional optoelectronic interconnect-processor and its operational bit error rate

    Science.gov (United States)

    Liu, J. Jiang; Gollsneider, Brian; Chang, Wayne H.; Carhart, Gary W.; Vorontsov, Mikhail A.; Simonis, George J.; Shoop, Barry L.

    2004-10-01

    Two-dimensional (2-D) multi-channel 8x8 optical interconnect and processor system were designed and developed using complementary metal-oxide-semiconductor (CMOS) driven 850-nm vertical-cavity surface-emitting laser (VCSEL) arrays and the photodetector (PD) arrays with corresponding wavelengths. We performed operation and bit-error-rate (BER) analysis on this free-space integrated 8x8 VCSEL optical interconnects driven by silicon-on-sapphire (SOS) circuits. Pseudo-random bit stream (PRBS) data sequence was used in operation of the interconnects. Eye diagrams were measured from individual channels and analyzed using a digital oscilloscope at data rates from 155 Mb/s to 1.5 Gb/s. Using a statistical model of Gaussian distribution for the random noise in the transmission, we developed a method to compute the BER instantaneously with the digital eye-diagrams. Direct measurements on this interconnects were also taken on a standard BER tester for verification. We found that the results of two methods were in the same order and within 50% accuracy. The integrated interconnects were investigated in an optoelectronic processing architecture of digital halftoning image processor. Error diffusion networks implemented by the inherently parallel nature of photonics promise to provide high quality digital halftoned images.

  10. A full-duplex working integrated optoelectronic device for optical interconnect

    Science.gov (United States)

    Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

    2018-05-01

    In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

  11. Development of Interconnect Technologies for Particle Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, Mani [Univ. of California, Davis, CA (United States)

    2015-01-29

    This final report covers the three years of this grant, for the funding period 9/1/2010 - 8/31/2013. The project consisted of generic detector R&D work at UC Davis, with an emphasis on developing interconnect technologies for applications in HEP. Much of the work is done at our Facility for Interconnect Technologies (FIT) at UC Davis. FIT was established using ARRA funds, with further studies supported by this grant. Besides generic R&D work at UC Davis, FIT is engaged in providing bump bonding help to several DOE supported detector R&D efforts. Some of the developmental work was also supported by funding from other sources: continuing CMS project funds and the Linear Collider R&D funds. The latter program is now terminated. The three year program saw a good deal of progress on several fronts, which are reported here.

  12. Stereoscopic construction and practice of optoelectronic technology textbook

    Science.gov (United States)

    Zhou, Zigang; Zhang, Jinlong; Wang, Huili; Yang, Yongjia; Han, Yanling

    2017-08-01

    It is a professional degree course textbook for the Nation-class Specialty—Optoelectronic Information Science and Engineering, and it is also an engineering practice textbook for the cultivation of photoelectric excellent engineers. The book seeks to comprehensively introduce the theoretical and applied basis of optoelectronic technology, and it's closely linked to the current development of optoelectronic industry frontier and made up of following core contents, including the laser source, the light's transmission, modulation, detection, imaging and display. At the same time, it also embodies the features of the source of laser, the transmission of the waveguide, the electronic means and the optical processing methods.

  13. Self-Rerouting and Curative Interconnect Technology (SERCUIT)

    Science.gov (United States)

    2017-12-01

    SPECIAL REPORT RDMR-CS-17-01 SELF-REROUTING AND CURATIVE INTERCONNECT TECHNOLOGY (SERCUIT) Shiv Joshi Concepts to Systems, Inc...Final 4. TITLE AND SUBTITLE Self-Rerouting and Curative Interconnect Technology (SERCUIT) 5. FUNDING NUMBERS 6. AUTHOR(S) Shiv Joshi...concepts2systems.com (p) 434-207-5189 x (f) Click to view full size Title Contract Number SELF-REROUTING AND CURATIVE INTERCONNECT TECHNOLOGY (SERCUIT) W911W6-17-C-0029

  14. The construction of bilingual teaching of optoelectronic technology

    Science.gov (United States)

    Zhang, Yang; Zhao, Enming; Yang, Fan; Li, Qingbo; Zhu, Zheng; Li, Cheng; Sun, Peng

    2017-08-01

    This paper combines the characteristics of optoelectronic technology with that of bilingual teaching. The course pays attention to integrating theory with practice, and cultivating learners' ability. Reform and exploration have been done in the fields of teaching materials, teaching content, teaching methods, etc. The concrete content mainly includes five parts: selecting teaching materials, establishing teaching syllabus, choosing suitable teaching method, making multimedia courseware and improving the test system, which can arouse students' interest in their study and their autonomous learning ability to provide beneficial references for improving the quality of talents of optoelectronic bilingual courses.

  15. Distributed Energy Resources Interconnection Systems: Technology Review and Research Needs

    Energy Technology Data Exchange (ETDEWEB)

    Friedman, N. R.

    2002-09-01

    Interconnecting distributed energy resources (DER) to the electric utility grid (or Area Electric Power System, Area EPS) involves system engineering, safety, and reliability considerations. This report documents US DOE Distribution and Interconnection R&D (formerly Distributed Power Program) activities, furthering the development and safe and reliable integration of DER interconnected with our nation's electric power systems. The key to that is system integration and technology development of the interconnection devices that perform the functions necessary to maintain the safety, power quality, and reliability of the EPS when DER are connected to it.

  16. Optics vs copper: from the perspective of "Thunderbolt" interconnect technology

    Science.gov (United States)

    Cheng, Hengju; Krause, Christine; Ko, Jamyuen; Gao, Miaobin; Liu, Guobin; Wu, Huichin; Qi, Mike; Lam, Chun-Chit

    2013-02-01

    Interconnect technology has been progressed at a very fast pace for the past decade. The signaling rates have steadily increased from 100:Mb/s to 25Gb/s. In every generation of interconnect technology evolution, optics always seems to take over at first, however, at the end, the cost advantage of copper wins over. Because of this, optical interconnects are limited to longer distance links where the attenuation in copper cable is too large for the integrated circuits to compensate. Optical interconnect has long been viewed as the premier solution in compared with copper interconnect. With the release of Thunderbolt technology, we are entering a new era in consumer electronics that runs at 10Gb/s line rate (20Gb/s throughput per connector interface). Thunderbolt interconnect technology includes both active copper cables and active optical cables as the transmission media which have very different physical characteristics. In order for optics to succeed in consumer electronics, several technology hurdles need to be cleared. For example, the optical cable needs to handle the consumer abuses such as pinch and bend. Also, the optical engine used in the active optical cable needs to be physically very small so that we don't change the looks and feels of the cable/connector. Most importantly, the cost of optics needs to come down significantly to effectively compete with the copper solution. Two interconnect technologies are compared and discussed on the relative cost, power consumption, form factor, density, and future scalability.

  17. Study and practice of flipped classroom in optoelectronic technology curriculum

    Science.gov (United States)

    Shi, Jianhua; Lei, Bing; Liu, Wei; Yao, Tianfu; Jiang, Wenjie

    2017-08-01

    "Flipped Classroom" is one of the most popular teaching models, and has been applied in more and more curriculums. It is totally different from the traditional teaching model. In the "Flipped Classroom" model, the students should watch the teaching video afterschool, and in the classroom only the discussion is proceeded to improve the students' comprehension. In this presentation, "Flipped Classroom" was studied and practiced in opto-electronic technology curriculum; its effect was analyzed by comparing it with the traditional teaching model. Based on extensive and deep investigation, the phylogeny, the characters and the important processes of "Flipped Classroom" are studied. The differences between the "Flipped Classroom" and the traditional teaching model are demonstrated. Then "Flipped Classroom" was practiced in opto-electronic technology curriculum. In order to obtain high effectiveness, a lot of teaching resources were prepared, such as the high-quality teaching video, the animations and the virtual experiments, the questions that the students should finish before and discussed in the class, etc. At last, the teaching effect was evaluated through analyzing the result of the examination and the students' surveys.

  18. Optical interconnect technologies for high-bandwidth ICT systems

    Science.gov (United States)

    Chujo, Norio; Takai, Toshiaki; Mizushima, Akiko; Arimoto, Hideo; Matsuoka, Yasunobu; Yamashita, Hiroki; Matsushima, Naoki

    2016-03-01

    The bandwidth of information and communication technology (ICT) systems is increasing and is predicted to reach more than 10 Tb/s. However, an electrical interconnect cannot achieve such bandwidth because of its density limits. To solve this problem, we propose two types of high-density optical fiber wiring for backplanes and circuit boards such as interface boards and switch boards. One type uses routed ribbon fiber in a circuit board because it has the ability to be formed into complex shapes to avoid interfering with the LSI and electrical components on the board. The backplane is required to exhibit high density and flexibility, so the second type uses loose fiber. We developed a 9.6-Tb/s optical interconnect demonstration system using embedded optical modules, optical backplane, and optical connector in a network apparatus chassis. We achieved 25-Gb/s transmission between FPGAs via the optical backplane.

  19. Thin film technologies for optoelectronic components in fiber optic communication

    Science.gov (United States)

    Perinati, Agostino

    1998-02-01

    will grow at an annual average rate of 22 percent from 1.3 million fiber-km in 1995 to 3.5 million fiber-km in 2000. The worldwide components market-cable, transceivers and connectors - 6.1 billion in 1994, is forecasted to grow and show a 19 percent combined annual growth rate through the year 2000 when is predicted to reach 17.38 billion. Fiber-in-the-loop and widespread use of switched digital services will dominate this scenario being the fiber the best medium for transmitting multimedia services. As long as communication will partially replace transportation, multimedia services will push forward technology for systems and related components not only for higher performances but for lower cost too in order to get the consumers wanting to buy the new services. In the long distance transmission area (trunk network) higher integration of electronic and optoelectronic functions are required for transmitter and receiver in order to allow for higher system speed, moving from 2.5 Gb/s to 5, 10, 40 Gb/s; narrow band wavelength division multiplexing (WDM) filters are required for higher transmission capacity through multiwavelength technique and for optical amplifier. In the access area (distribution network) passive components as splitters, couplers, filters are needed together with optical amplifiers and transceivers for point-to-multipoint optical signal distribution: main issue in this area is the total cost to be paid by the customer for basic and new services. Multimedia services evolution, through fiber to the home and to the desktop approach, will be mainly affected by the availability of technologies suitable for component consistent integration, high yield manufacturing processes and final low cost. In this paper some of the optoelectronic components and related thin film technologies expected to mainly affect the fiber optic transmission evolution, either for long distance telecommunication systems or for subscriber network, are presented.

  20. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

    Directory of Open Access Journals (Sweden)

    Andre F. S. Guedes

    2014-06-01

    Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

  1. The Special LHC Interconnections Technologies, Organization and Quality Control

    CERN Document Server

    Tock, J P; Bozzini, D; Cruikshank, P; Desebe, O; Felip, M; Garion, C; Hajduk, L; Jacquemod, A; Kos, N; Laurent, F; Poncet, A; Russenschuck, Stephan; Slits, I; Vaudaux, L; Williams, L

    2008-01-01

    In addition to the standard interconnections (IC) of the continuous cryostat of the Large Hadron Collider (LHC), there exists a variety of special ones related to specific components and assemblies, such as cryomagnets of the insertion regions, electrical feedboxes and superconducting links. Though they are less numerous, their specificities created many additional IC types, requiring a larger variety of assembly operations and quality control techniques, keeping very high standards of quality. Considerable flexibility and adaptability from all the teams involved (CERN staff, collaborating institutes, contractors) were the key points to ensure the success of this task. This paper first describes the special IC and presents the employed technologies which are generally adapted from the standard work. Then, the organization adopted for this non-repetitive work is described. Examples of non-conformities that were resolved are also discussed. Figures of merit in terms of quality and productivity are given and com...

  2. OMNI: An optoelectronic multichannel network interface based on hybrid CMOS-SEED technology

    Science.gov (United States)

    Pinkston, Timothy M.

    1996-11-01

    This paper presents a hybrid CMOS-SEED multiprocessor network interface smart pixel design that implements a reservation-based channel control protocol for collisionless concurrent access to multiple optical interprocessor communication channels. An asynchronous optical token is used as the arbitration mechanism for reservation control instead of slotted access. This work demonstrates that complex network protocol functions can be implemented using optoelectronic smart pixel technology.

  3. Information, optoelectronics, and information technologies (historic, philosophical, and logical aspects)

    Science.gov (United States)

    Dzhaliashvili, Zurab O.; Suhorukova, Marina V.

    2001-06-01

    For a civilization of the post-industrial society which is defined as 'informational civilization,' the heightened interest to new technological expedients of any interaction with the information is characteristic. Now concept 'information' is defined as an independent category. The organization, storage, transmission and displaying of information, in essence, is one of the ways of its self- organization for a civilization of such type. Therefore branches bound with generating and support of information highways, are in the center of attention those who tries to capture strategic favorable positions in world community. The reasons of the geopolitical and economic strategy in this case are direct, 'easy-to-see' mechanisms of creation of the structures in investigation activity and industry, 'Easy-to- see,' analyzable, even predictable -- but not defining. The modern science knows the physical laws of composite system's self-organization, and, as clear now, the unclosed nonequilibrium system, which one is a World Net, is subject to the laws of such system's self-organization. Nowadays the fractal nature of all Webs' infrastructures as super complex self-organizing transport-information system is established. Besides, in a row of its performances we observe an openness, coherence, nonlinearly, that together with other aspects allows to identify it as physical fractal structure living on the laws of self-organization. The interest to this phenomenon is quite clear. We have to know the laws of behavior of a Web because it is one of the sides of appearance of Noosphere, and we must adequately interact with it. There are numerous important problems, bound with a Web, and attempts to resolve them are the first task of human community, as nevertheless the human person creates the Web (or nature by hand of the person?) It's very interesting to analyze the previous history of occurrence of such phenomenon, as a Web, and to do the attempts of the prognoses on the future. For

  4. An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

    Science.gov (United States)

    Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

    2012-12-17

    An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

  5. Smart City Energy Interconnection Technology Framework Preliminary Research

    Science.gov (United States)

    Zheng, Guotai; Zhao, Baoguo; Zhao, Xin; Li, Hao; Huo, Xianxu; Li, Wen; Xia, Yu

    2018-01-01

    to improve urban energy efficiency, improve the absorptive ratio of new energy resources and renewable energy sources, and reduce environmental pollution and other energy supply and consumption technology framework matched with future energy restriction conditions and applied technology level are required to be studied. Relative to traditional energy supply system, advanced information technology-based “Energy Internet” technical framework may give play to energy integrated application and load side interactive technology advantages, as a whole optimize energy supply and consumption and improve the overall utilization efficiency of energy.

  6. Robust microfabricated interconnect technologies: DC to THz, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — In recent years, Nuvotronics has developed state-of-the art antenna array and SSPA technologies at microwave and mmW frequencies with NASA funding through the SBIR...

  7. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  8. High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Xianshu eLuo

    2015-04-01

    Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

  9. A Vision of China-Arab Interconnection Transmission Network Planning with UHVDC Technology

    Science.gov (United States)

    Wu, Dan; Liu, Yujun; Yin, Hongyuan; Xu, Qingshan; Xu, Xiaohui; Ding, Maosheng

    2017-05-01

    Developments in ultra-high-voltage (UHV) power systems and clean energy technologies are paving the way towards unprecedented energy market globalization. In accordance with the international community’s enthusiasm for building up the Global Energy Internet, this paper focuses on the feasibility of transmitting large-size electricity from northwest China to Arab world through a long-distance transnational power interconnection. The complete investigations on the grids of both the sending-end and receiving-end is firstly presented. Then system configuration of the transmission scheme and corridor route planning is proposed with UHVDC technology. Based on transmission costs’ investigation about similar transmission projects worldwide, the costs of the proposed transmission scheme are estimated through adjustment factors which represent differences in latitude, topography and economy. The proposed China-Arab transmission line sheds light on the prospects of power cooperation and resource sharing between China and Arab states, and appeals for more emphasis on green energy concentrated power interconnections from a global perspective.

  10. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

    Science.gov (United States)

    Moustakas, Theodore D.; Paiella, Roberto

    2017-10-01

    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  11. Warpage Characteristics and Process Development of Through Silicon Via-Less Interconnection Technology.

    Science.gov (United States)

    Shen, Wen-Wei; Lin, Yu-Min; Wu, Sheng-Tsai; Lee, Chia-Hsin; Huang, Shin-Yi; Chang, Hsiang-Hung; Chang, Tao-Chih; Chen, Kuan-Neng

    2018-08-01

    In this study, through silicon via (TSV)-less interconnection using the fan-out wafer-level-packaging (FO-WLP) technology and a novel redistribution layer (RDL)-first wafer level packaging are investigated. Since warpage of molded wafer is a critical issue and needs to be optimized for process integration, the evaluation of the warpage issue on a 12-inch wafer using finite element analysis (FEA) at various parameters is presented. Related parameters include geometric dimension (such as chip size, chip number, chip thickness, and mold thickness), materials' selection and structure optimization. The effect of glass carriers with various coefficients of thermal expansion (CTE) is also discussed. Chips are bonded onto a 12-inch reconstituted wafer, which includes 2 RDL layers, 3 passivation layers, and micro bumps, followed by using epoxy molding compound process. Furthermore, an optical surface inspector is adopted to measure the surface profile and the results are compared with the results from simulation. In order to examine the quality of the TSV-less interconnection structure, electrical measurement is conducted and the respective results are presented.

  12. Fundamentals of lead-free solder interconnect technology from microstructures to reliability

    CERN Document Server

    Lee, Tae-Kyu; Kim, Choong-Un; Ma, Hongtao

    2015-01-01

    This unique book provides an up-to-date overview of the fundamental concepts behind lead-free solder and interconnection technology. Readers will find a description of the rapidly increasing presence of electronic systems in all aspects of modern life as well as the increasing need for predictable reliability in electronic systems. The physical and mechanical properties of lead-free solders are examined in detail, and building on fundamental science, the mechanisms responsible for damage and failure evolution, which affect reliability of lead-free solder joints are identified based on microstructure evolution.  The continuing miniaturization of electronic systems will increase the demand on the performance of solder joints, which will require new alloy and processing strategies as well as interconnection design strategies. This book provides a foundation on which improved performance and new design approaches can be based.  In summary, this book:  Provides an up-to-date overview on lead-free soldering tech...

  13. Application of a new interconnection technology for the ATLAS pixel upgrade at SLHC

    CERN Document Server

    Macchiolo, A; Beimforde, M; Moser, H G; Nisius, R; Richter, R H

    2009-01-01

    We present an R&D activity aiming towards a new detector concept in the framework of the ATLAS pixel detector upgrade exploiting a vertical integration technology developed at the Fraunhofer Institute IZMMunich. The Solid-Liquid InterDiffusion (SLID) technique is investigated as an alternative to the bump-bonding process. We also investigate the extraction of the signals from the back of the read-out chip through Inter-Chip-Vias to achieve a higher fraction of active area with respect to the present ATLAS pixel module. We will present the layout and the first results obtained with a production of test-structures designed to investigate the SLID interconnection efficiency as a function of different parameters, i.e. the pixel size and pitch, as well as the planarity of the underlying layers.

  14. Cu Pillar Low Temperature Bonding and Interconnection Technology of for 3D RF Microsystem

    Science.gov (United States)

    Shi, G. X.; Qian, K. Q.; Huang, M.; Yu, Y. W.; Zhu, J.

    2018-03-01

    In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used the heterogeneous chip such as GaAs integration with Si interposers should be at low temperature. The pillars were constituted by Cu (2 micron) -Ni (2 micron) -Cu (3 micron) -Sn (1 micron) multilayer metal and total height is 8 micron on the front-side of the wafer by using electroplating. The wafer backside Cu pillar is obtained by temporary bonding, thinning and silicon surface etching. The RF interposers are stacked by Cu-Sn eutectic bonding at 260 °C. Analyzed the reliability of different pillar bonding structure.

  15. Optical technology for microwave applications VI and optoelectronic signal processing for phased-array antennas III; Proceedings of the Meeting, Orlando, FL, Apr. 20-23, 1992

    Science.gov (United States)

    Yao, Shi-Kay; Hendrickson, Brian M.

    The following topics related to optical technology for microwave applications are discussed: advanced acoustooptic devices, signal processing device technologies, optical signal processor technologies, microwave and optomicrowave devices, advanced lasers and sources, wideband electrooptic modulators, and wideband optical communications. The topics considered in the discussion of optoelectronic signal processing for phased-array antennas include devices, signal processing, and antenna systems.

  16. Add/drop filters based on SiC technology for optical interconnects

    International Nuclear Information System (INIS)

    Vieira, M; Vieira, M A; Louro, P; Fantoni, A; Silva, V

    2014-01-01

    In this paper we demonstrate an add/drop filter based on SiC technology. Tailoring of the channel bandwidth and wavelength is experimentally demonstrated. The concept is extended to implement a 1 by 4 wavelength division multiplexer with channel separation in the visible range. The device consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure. Several monochromatic pulsed lights, separately or in a polychromatic mixture illuminated the device. Independent tuning of each channel is performed by steady state violet bias superimposed either from the front and back sides. Results show that, front background enhances the light-to-dark sensitivity of the long and medium wavelength channels and quench strongly the others. Back violet background has the opposite behaviour. This nonlinearity provides the possibility for selective removal or addition of wavelengths. An optoelectronic model is presented and explains the light filtering properties of the add/drop filter, under different optical bias conditions

  17. New technology for improved utilization of the interconnected power system; Ny teknologi for bedre utnyttelse av overfoerings-systemet

    Energy Technology Data Exchange (ETDEWEB)

    Enger, A.K.

    1996-12-31

    The present paper deals with methods used for improving the utilization of interconnected power systems. The author discusses new technologies for improvement and safety of power transmission. Main themes covered in this paper are HVDC (High Voltage DC) systems in Norway, possibilities of load management control, other possible/necessary measures in the grid system, and the development and trends. 21 figs.

  18. Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at National Taipei University of Technology)

    Energy Technology Data Exchange (ETDEWEB)

    Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division

    2016-11-14

    These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at National Taipei University of Technology. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

  19. Development of a technology for fabricating low-cost parallel optical interconnects

    Science.gov (United States)

    Van Steenberge, Geert; Hendrickx, Nina; Geerinck, Peter; Bosman, Erwin; Van Put, Steven; Van Daele, Peter

    2006-04-01

    We present a fabrication technology for integrating polymer waveguides and 45° micromirror couplers into standard electrical printed circuit boards (PCBs). The most critical point that is being addressed is the low-cost manufacturing and the compatibility with current PCB production. The latter refers to the processes as well as material compatibility. In the fist part the waveguide fabrication technology is discussed, both photo lithography and laser ablation are proposed. It is shown that a frequency tripled Nd-YAG laser (355 nm) offers a lot of potential for defining single mode interconnections. Emphasis is on multimode waveguides, defined by KrF excimer laser (248 nm) ablation using acrylate polymers. The first conclusion out of loss spectrum measurements is a 'yellowing effect' of laser ablated waveguides, leading to an increased loss at shorter wavelengths. The second important conclusion is a potential low loss at a wavelength of 850 nm, 980 nm and 1310 nm. This is verified at 850 nm by cut-back measurements on 10-cm-long waveguides showing an average propagation loss of 0.13 dB/cm. Photo lithographically defined waveguides using inorganic-organic hybrid polymers show an attenuation loss of 0.15 dB/cm at 850 nm. The generation of debris and the presence of microstructures are two main concerns for KrF excimer laser ablation of hybrid polymers. In the second part a process for embedding metal coated 45° micromirrors in optical waveguiding layers is described. Mirrors are selectively metallized using a lift-off process. Filling up the angled via without the presence of air bubbles and providing a flat surface above the mirror is only possible by enhancing the cladding deposition process with ultrasound agitation. Initial loss measurements indicate an excess mirror loss of 1.5 dB.

  20. Organic optoelectronics

    CERN Document Server

    Hu, Wenping; Gong, Xiong; Zhan, Xiaowei; Fu, Hongbing; Bjornholm, Thomas

    2012-01-01

    Written by internationally recognized experts in the field with academic as well as industrial experience, this book concisely yet systematically covers all aspects of the topic.The monograph focuses on the optoelectronic behavior of organic solids and their application in new optoelectronic devices. It covers organic electroluminescent materials and devices, organic photonics, materials and devices, as well as organic solids in photo absorption and energy conversion. Much emphasis is laid on the preparation of functional materials and the fabrication of devices, from materials synthesis a

  1. Perspectives in optoelectronics

    National Research Council Canada - National Science Library

    Jha, Sudhanshu S

    1995-01-01

    ..., optoelectronics is playing a major role in both applied as well as basic sciences. In years to come, i t is destined to change the face of information technology and robotics, involving optical sensing and control, information storage, signal and image processing, communications, and computing. Because of the possibility of using large bandwidths availa...

  2. Interconnection Guidelines

    Science.gov (United States)

    The Interconnection Guidelines provide general guidance on the steps involved with connecting biogas recovery systems to the utility electrical power grid. Interconnection best practices including time and cost estimates are discussed.

  3. 3D interconnect technology based on low temperature copper nanoparticle sintering

    NARCIS (Netherlands)

    Zhang, B.; Carisey, Y.C.P.; Damian, A.; Poelma, R.H.; Zhang, G.Q.; van Zeijl, H.W.; Bi, Keyun; Liu, Sheng; Zhou, Shengjun

    2016-01-01

    We explore a methodology for patterned copper nanoparticle paste for 3D interconnect applications in wafer to wafer (W2W) bonding. A novel fine pitch thermal compression bonding process (sintering) with coated copper nanoparticle paste was developed. Most of the particle size is between 10-30 nm.

  4. High-performance parallel processors based on star-coupled wavelength division multiplexing optical interconnects

    Science.gov (United States)

    Deri, Robert J.; DeGroot, Anthony J.; Haigh, Ronald E.

    2002-01-01

    As the performance of individual elements within parallel processing systems increases, increased communication capability between distributed processor and memory elements is required. There is great interest in using fiber optics to improve interconnect communication beyond that attainable using electronic technology. Several groups have considered WDM, star-coupled optical interconnects. The invention uses a fiber optic transceiver to provide low latency, high bandwidth channels for such interconnects using a robust multimode fiber technology. Instruction-level simulation is used to quantify the bandwidth, latency, and concurrency required for such interconnects to scale to 256 nodes, each operating at 1 GFLOPS performance. Performance scales have been shown to .apprxeq.100 GFLOPS for scientific application kernels using a small number of wavelengths (8 to 32), only one wavelength received per node, and achievable optoelectronic bandwidth and latency.

  5. The Development of an IMU Integrated Clothes for Postural Monitoring Using Conductive Yarn and Interconnecting Technology.

    Science.gov (United States)

    Kang, Sung-Won; Choi, Hyeob; Park, Hyung-Il; Choi, Byoung-Gun; Im, Hyobin; Shin, Dongjun; Jung, Young-Giu; Lee, Jun-Young; Park, Hong-Won; Park, Sukyung; Roh, Jung-Sim

    2017-11-07

    Spinal disease is a common yet important condition that occurs because of inappropriate posture. Prevention could be achieved by continuous posture monitoring, but most measurement systems cannot be used in daily life due to factors such as burdensome wires and large sensing modules. To improve upon these weaknesses, we developed comfortable "smart wear" for posture measurement using conductive yarn for circuit patterning and a flexible printed circuit board (FPCB) for interconnections. The conductive yarn was made by twisting polyester yarn and metal filaments, and the resistance per unit length was about 0.05 Ω/cm. An embroidered circuit was made using the conductive yarn, which showed increased yield strength and uniform electrical resistance per unit length. Circuit networks of sensors and FPCBs for interconnection were integrated into clothes using a computer numerical control (CNC) embroidery process. The system was calibrated and verified by comparing the values measured by the smart wear with those measured by a motion capture camera system. Six subjects performed fixed movements and free computer work, and, with this system, we were able to measure the anterior/posterior direction tilt angle with an error of less than 4°. The smart wear does not have excessive wires, and its structure will be optimized for better posture estimation in a later study.

  6. The Development of an IMU Integrated Clothes for Postural Monitoring Using Conductive Yarn and Interconnecting Technology

    Directory of Open Access Journals (Sweden)

    Sung-Won Kang

    2017-11-01

    Full Text Available Spinal disease is a common yet important condition that occurs because of inappropriate posture. Prevention could be achieved by continuous posture monitoring, but most measurement systems cannot be used in daily life due to factors such as burdensome wires and large sensing modules. To improve upon these weaknesses, we developed comfortable “smart wear” for posture measurement using conductive yarn for circuit patterning and a flexible printed circuit board (FPCB for interconnections. The conductive yarn was made by twisting polyester yarn and metal filaments, and the resistance per unit length was about 0.05 Ω/cm. An embroidered circuit was made using the conductive yarn, which showed increased yield strength and uniform electrical resistance per unit length. Circuit networks of sensors and FPCBs for interconnection were integrated into clothes using a computer numerical control (CNC embroidery process. The system was calibrated and verified by comparing the values measured by the smart wear with those measured by a motion capture camera system. Six subjects performed fixed movements and free computer work, and, with this system, we were able to measure the anterior/posterior direction tilt angle with an error of less than 4°. The smart wear does not have excessive wires, and its structure will be optimized for better posture estimation in a later study.

  7. Stochastic Lotka-Volterra equations: A model of lagged diffusion of technology in an interconnected world

    Science.gov (United States)

    Chakrabarti, Anindya S.

    2016-01-01

    We present a model of technological evolution due to interaction between multiple countries and the resultant effects on the corresponding macro variables. The world consists of a set of economies where some countries are leaders and some are followers in the technology ladder. All of them potentially gain from technological breakthroughs. Applying Lotka-Volterra (LV) equations to model evolution of the technology frontier, we show that the way technology diffuses creates repercussions in the partner economies. This process captures the spill-over effects on major macro variables seen in the current highly globalized world due to trickle-down effects of technology.

  8. Transurban interconnectivities

    DEFF Research Database (Denmark)

    Jørgensen, Claus Møller

    2012-01-01

    This essay discusses the interpretation of the revolutionary situations of 1848 in light of recent debates on interconnectivity in history. The concept of transurban interconnectivities is proposed as the most precise concept to capture the nature of interconnectivity in 1848. It is argued....... It is argued that circulating political communication accounts for similarities with respect to political agenda, organisational form and political repertoire evident in urban settings across Europe. This argument is supported by a series of examples of local organisation and local appropriations of liberalism...

  9. Optical interconnects

    CERN Document Server

    Chen, Ray T

    2006-01-01

    This book describes fully embedded board level optical interconnect in detail including the fabrication of the thin-film VCSEL array, its characterization, thermal management, the fabrication of optical interconnection layer, and the integration of devices on a flexible waveguide film. All the optical components are buried within electrical PCB layers in a fully embedded board level optical interconnect. Therefore, we can save foot prints on the top real estate of the PCB and relieve packaging difficulty reduced by separating fabrication processes. To realize fully embedded board level optical

  10. Lasers and optoelectronics fundamentals, devices and applications

    CERN Document Server

    Maini, Anil K

    2013-01-01

    With emphasis on the physical and engineering principles, this book provides a comprehensive and highly accessible treatment of modern lasers and optoelectronics. Divided into four parts, it explains laser fundamentals, types of lasers, laser electronics & optoelectronics, and laser applications, covering each of the topics in their entirety, from basic fundamentals to advanced concepts. Key features include: exploration of technological and application-related aspects of lasers and optoelectronics, detailing both existing and emerging applications in industry, medical diag

  11. An introduction to optoelectronic sensors

    CERN Document Server

    Tajani, Antonella; Cutolo, Antonello

    2009-01-01

    This invaluable book offers a comprehensive overview of the technologies and applications of optoelectronic sensors. Based on the R&D experience of more than 70 engineers and scientists, highly representative of the Italian academic and industrial community in this area, this book provides a broad and accurate description of the state-of-the-art optoelectronic technologies for sensing. The most innovative approaches, such as the use of photonic crystals, squeezed states of light and microresonators for sensing, are considered. Application areas range from environment to medicine and healthcare

  12. Integrated Circuit Conception: A Wire Optimization Technic Reducing Interconnection Delay in Advanced Technology Nodes

    Directory of Open Access Journals (Sweden)

    Mohammed Darmi

    2017-10-01

    Full Text Available As we increasingly use advanced technology nodes to design integrated circuits (ICs, physical designers and electronic design automation (EDA providers are facing multiple challenges, firstly, to honor all physical constraints coming with cutting-edge technologies and, secondly, to achieve expected quality of results (QoR. An advanced technology should be able to bring better performances with minimum cost whatever the complexity. A high effort to develop out-of-the-box optimization techniques is more than needed. In this paper, we will introduce a new routing technique, with the objective to optimize timing, by only acting on routing topology, and without impacting the IC Area. In fact, the self-aligned double patterning (SADP technology offers an important difference on layer resistance between SADP and No-SADP layers; this property will be taken as an advantage to drive the global router to use No-SADP less resistive layers for critical nets. To prove the benefit on real test cases, we will use Mentor Graphics’ physical design EDA tool Nitro-SoC™ and several 7 nm technology node designs. The experiments show that worst negative slack (WNS and total negative slack (TNS improved up to 13% and 56%, respectively, compared to the baseline flow.

  13. Interconnected networks

    CERN Document Server

    2016-01-01

    This volume provides an introduction to and overview of the emerging field of interconnected networks which include multi layer or multiplex networks, as well as networks of networks. Such networks present structural and dynamical features quite different from those observed in isolated networks. The presence of links between different networks or layers of a network typically alters the way such interconnected networks behave – understanding the role of interconnecting links is therefore a crucial step towards a more accurate description of real-world systems. While examples of such dissimilar properties are becoming more abundant – for example regarding diffusion, robustness and competition – the root of such differences remains to be elucidated. Each chapter in this topical collection is self-contained and can be read on its own, thus making it also suitable as reference for experienced researchers wishing to focus on a particular topic.

  14. Dual-scale topology optoelectronic processor.

    Science.gov (United States)

    Marsden, G C; Krishnamoorthy, A V; Esener, S C; Lee, S H

    1991-12-15

    The dual-scale topology optoelectronic processor (D-STOP) is a parallel optoelectronic architecture for matrix algebraic processing. The architecture can be used for matrix-vector multiplication and two types of vector outer product. The computations are performed electronically, which allows multiplication and summation concepts in linear algebra to be generalized to various nonlinear or symbolic operations. This generalization permits the application of D-STOP to many computational problems. The architecture uses a minimum number of optical transmitters, which thereby reduces fabrication requirements while maintaining area-efficient electronics. The necessary optical interconnections are space invariant, minimizing space-bandwidth requirements.

  15. Patterned electrodeposition of interconnects using microcontact printing

    NARCIS (Netherlands)

    Hovestad, A.; Rendering, H.; Maijenburg, A.W.

    2012-01-01

    Microcontact printing combined with electroless deposition is a potential low cost technique to make electrical interconnects for opto-electronic devices. Microcontact printed inhibitors locally prevent electroless deposition resulting in a pre-defined pattern of metal tracks. The inhibition of

  16. Policy issues in interconnecting networks

    Science.gov (United States)

    Leiner, Barry M.

    1989-01-01

    To support the activities of the Federal Research Coordinating Committee (FRICC) in creating an interconnected set of networks to serve the research community, two workshops were held to address the technical support of policy issues that arise when interconnecting such networks. The workshops addressed the required and feasible technologies and architectures that could be used to satisfy the desired policies for interconnection. The results of the workshop are documented.

  17. Development of thin pixel sensors and a novel interconnection technology for the SLHC

    International Nuclear Information System (INIS)

    Macchiolo, A.; Andricek, L.; Beimforde, M.; Dubbert, J.; Ghodbane, N.; Kortner, O.; Kroha, H.; Moser, H.G.; Nisius, R.; Richter, R.H.

    2008-01-01

    We present an R and D activity aiming to develop a new detector concept in the framework of the ATLAS pixel detector upgrade in view of the Super-LHC. The new devices combine 75-150 μm thick pixels sensors with a vertical integration technology. A new production of thin pixel sensors on n- and p-type material is under way at the MPI Semiconductor Laboratory. These devices will be connected to the ATLAS read-out electronics with the new Solid-Liquid InterDiffusion technique as an alternative to the bump-bonding process. We also plan for the signals to be extracted from the back of the electronics wafer through Inter-Chip-Vias. The compatibility of the Solid-Liquid InterDiffusion process with the silicon sensor functionality has already been demonstrated by measurements on two wafers hosting diodes with an active thickness of 50 μm

  18. Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

    Directory of Open Access Journals (Sweden)

    Cheng Chuantong

    2017-07-01

    Full Text Available Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

  19. Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

    Science.gov (United States)

    Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

    2017-07-01

    Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

  20. FY 1999 report on the results of the R and D of femtosecond technology. Development of ultra-short pulse optoelectronics technology; 1999 nendo femutobyo technology no kenkyu kaihatsu seika hokokusho. Chotan pulse hikari electronics gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The paper described the FY 1999 results of the R and D of femtosecond technology. For the purpose of creating new industrial basement technology which supports the highly information-oriented society in the 21st century, the ultra-high speed electronics technology is indispensable which is beyond speed limits of the existing electronics technology and has new functionality. The ultra-high speed electronics basement technology is established through the R and D of the technology to control the state of light and electronics in the femtosecond time domain (10{sup -15} - 10{sup -12} second). Themes of the R and D are technology to generate/transmit femtosecond optical pulse, technology for control/distribution, and ultra-short pulse optoelectronics common basement technology. In FY 1999, a lot of results were obtained in the following: generation of the pulse train highly repeated at 500GHz in semiconductor laser; 139km transmission of 250fs optical pulse; switching movement at ultra-high speed of 150fs-1.2ps in transition among subbands of GaN base and Sb base materials; DEMUXA movement toward 160-10Gb/s in Mach-Zehnder type optical switch. (NEDO)

  1. 32 x 16 CMOS smart pixel array for optical interconnects

    Science.gov (United States)

    Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

    2000-05-01

    Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

  2. Organic optoelectronics:materials,devices and applications

    Institute of Scientific and Technical Information of China (English)

    LIU Yi; CUI Tian-hong

    2005-01-01

    The interest in organic materials for optoelectronic devices has been growing rapidly in the last two decades. This growth has been propelled by the exciting advances in organic thin films for displays, low-cost electronic circuits, etc. An increasing number of products employing organic electronic devices have become commercialized, which has stimulated the age of organic optoelectronics. This paper reviews the recent progress in organic optoelectronic technology. First, organic light emitting electroluminescent materials are introduced. Next, the three kinds of most important organic optoelectronic devices are summarized, including light emitting diode, organic photovoltaic cell, and photodetectors. The various applications of these devices are also reviewed and discussed in detail. Finally, the market and future development of optoelectronic devices are also demonstrated.

  3. Research on the processing technology of medium-caliber aspheric lens in the optoelectronic integrated test system

    Science.gov (United States)

    Liu, Dan; Yu, Xin-ying; Wang, Wei

    2016-10-01

    In the optoelectronic integrated test system, surface profile and finish of the optical element are put forward higher request. Taking an aspherical quartz glass lens with a diameter of 200mm as example, taking Preston hypothesis as the theoretical basis, analyze the influence of surface quality of various process parameters, including the workpiece and the tool axis spindle speed, wheel type, concentration polishing, polishing mold species, dwell time, polishing pressure and other parameters. Using CNC method for the surface profile and surface quality of the lens were investigated. Taking profilometer measurement results as a guide, by testing and simulation analysis, process parameters were improved constantly in the process of manufacturing. Mid and high frequency error were trimmed and improved so that the surface form gradually converged to the required accuracy. The experimental results show that the final accuracy of the surface is less than 2µm and the surface finish is, which fulfils the accuracy requirement of aspherical focusing lens in optical system.

  4. FY 2000 report on the results of the R and D of femtosecond technology. Development of the ultra-short pulse optoelectronic technology; 2000 nendo femto byo technology no kenkyu kaihatsu seika hokokusho. Chotan pulse hikari electronics gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    This project aims at creating new industrial basement technology which supports the highly information-oriented society in the 21st century, conducts the R and D of technology to control the state of light and electron in the femtosecond time domain (10{sup -15} - 10{sup -12} sec), and establishes the basement technology which exceeds the speed limit of the conventional electronics technology and also includes new functionality. Especially, it aims at establishing the basement technology of the ultra-high speed optoelectronics which are absolutely necessary for construction of the Tb/s class ultra-high speed/large capacity information communication infrastructure. The results obtained in this fiscal year were as follows: successful transmission of 144km of 600fs optical pulse, successful experiment of 4-chain pulse DEMUX equivalent to 1Tb/s by ultra-high speed intersubband transition optical switch of Sb-base material combination quantum well, realization of 2-bit coding/decoding in the spectral region, realization of serial-parallel conversion motion of optical pulse equivalent to 1Tb/s using squarylium J aggregate thin films, realization of subpico second optical pulse 20nm wavelength conversion by DFB laser structure, etc. (NEDO)

  5. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    Energy Technology Data Exchange (ETDEWEB)

    Beimforde, Michael

    2010-07-19

    edge demonstrate that the active sensor area fraction can be increased to fulfill the requirements for the detector upgrades. A subset of sensors, irradiated up to the fluence expected at the sLHC demonstrated that thin sensors show a higher charge collection efficiency than expected from current radiation damage models. First thin diodes equipped with the SLID metallization and first test structures that were connected with SLID indicate that this novel interconnection as part of the ICV-SLID technology could be a suitable replacement for the present bump-bonding technology. Finally, a new calibration algorithm for the ATLAS pixel readout chips is presented which is used to lower the discriminator threshold from 4000 electrons to 2000 electrons, to account for the reduction of the signal size due to radiation damage and the reduced sensor thickness. (orig.)

  6. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    International Nuclear Information System (INIS)

    Beimforde, Michael

    2010-01-01

    sensor area fraction can be increased to fulfill the requirements for the detector upgrades. A subset of sensors, irradiated up to the fluence expected at the sLHC demonstrated that thin sensors show a higher charge collection efficiency than expected from current radiation damage models. First thin diodes equipped with the SLID metallization and first test structures that were connected with SLID indicate that this novel interconnection as part of the ICV-SLID technology could be a suitable replacement for the present bump-bonding technology. Finally, a new calibration algorithm for the ATLAS pixel readout chips is presented which is used to lower the discriminator threshold from 4000 electrons to 2000 electrons, to account for the reduction of the signal size due to radiation damage and the reduced sensor thickness. (orig.)

  7. Low power interconnect design

    CERN Document Server

    Saini, Sandeep

    2015-01-01

    This book provides practical solutions for delay and power reduction for on-chip interconnects and buses.  It provides an in depth description of the problem of signal delay and extra power consumption, possible solutions for delay and glitch removal, while considering the power reduction of the total system.  Coverage focuses on use of the Schmitt Trigger as an alternative approach to buffer insertion for delay and power reduction in VLSI interconnects. In the last section of the book, various bus coding techniques are discussed to minimize delay and power in address and data buses.   ·         Provides practical solutions for delay and power reduction for on-chip interconnects and buses; ·         Focuses on Deep Sub micron technology devices and interconnects; ·         Offers in depth analysis of delay, including details regarding crosstalk and parasitics;  ·         Describes use of the Schmitt Trigger as a versatile alternative approach to buffer insertion for del...

  8. Organic optoelectronic materials

    CERN Document Server

    Li, Yongfang

    2015-01-01

    This volume reviews the latest trends in organic optoelectronic materials. Each comprehensive chapter allows graduate students and newcomers to the field to grasp the basics, whilst also ensuring that they have the most up-to-date overview of the latest research. Topics include: organic conductors and semiconductors; conducting polymers and conjugated polymer semiconductors, as well as their applications in organic field-effect-transistors; organic light-emitting diodes; and organic photovoltaics and transparent conducting electrodes. The molecular structures, synthesis methods, physicochemical and optoelectronic properties of the organic optoelectronic materials are also introduced and described in detail. The authors also elucidate the structures and working mechanisms of organic optoelectronic devices and outline fundamental scientific problems and future research directions. This volume is invaluable to all those interested in organic optoelectronic materials.

  9. Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

    Directory of Open Access Journals (Sweden)

    Yong-Jun Li

    2012-03-01

    Full Text Available We proposed intercalation of hexagonal boron nitride (hBN in multilayer graphene to improve its performance in ultra-scaled interconnects for integrated circuit. The effect of intercalated hBN layer in bilayer graphene is investigated using non-equilibrium Green's functions. We find the hBN intercalated bilayer graphene exhibit enhanced transport properties compared with pristine bilayer ones, and the improvement is attributed to suppression of interlayer scattering and good planar bonding condition of inbetween hBN layer. Based on these results, we proposed a via structure that not only benefits from suppressed interlayer scattering between multilayer graphene, but also sustains the unique electrical properties of graphene when many graphene layers are stacking together. The ideal current density across the structure can be as high as 4.6×109 A/cm2 at 1V, which is very promising for the future high-performance interconnect.

  10. Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

    Science.gov (United States)

    Li, Yong-Jun; Sun, Qing-Qing; Chen, Lin; Zhou, Peng; Wang, Peng-Fei; Ding, Shi-Jin; Zhang, David Wei

    2012-03-01

    We proposed intercalation of hexagonal boron nitride (hBN) in multilayer graphene to improve its performance in ultra-scaled interconnects for integrated circuit. The effect of intercalated hBN layer in bilayer graphene is investigated using non-equilibrium Green's functions. We find the hBN intercalated bilayer graphene exhibit enhanced transport properties compared with pristine bilayer ones, and the improvement is attributed to suppression of interlayer scattering and good planar bonding condition of inbetween hBN layer. Based on these results, we proposed a via structure that not only benefits from suppressed interlayer scattering between multilayer graphene, but also sustains the unique electrical properties of graphene when many graphene layers are stacking together. The ideal current density across the structure can be as high as 4.6×109 A/cm2 at 1V, which is very promising for the future high-performance interconnect.

  11. Investigation, study and practice of optoelectronic MOOCs

    Science.gov (United States)

    Shi, Jianhua; Liu, Wei; Lei, Bing; Yao, Tianfu; Fu, Sihua

    2017-08-01

    MOOC(Massive Open Online Course) is a new teaching model that has been springing up since 2012. The typical characters are short teaching video, massive learners, flexible place and time to study, etc. Although MOOC is very popular now, opto-electronic MOOCs are not much enough to meet the need of online learners. In this paper, the phylogeny, the current situation and the characters of MOOC were described, the most famous MOOCs' websites, such as Udacity, Coursera, edX, Chinese College MOOC, xuetangx, were introduced, the opto-electronic MOOCs come from these famous MOOCs' website were investigated extensively and studied deeply, the "Application of Opto-electronic Technology MOOC" which was established by our group is introduced, and some conclusions are obtained. These conclusions can give some suggestions to the online learners who are interested in opto-electronic and the teachers who are teaching the opto-electronic curriculums. The preparation of "Opto-electronic Technology MOOC" is described in short.

  12. Optoelectronic lessons as an interdisciplinary lecture

    Science.gov (United States)

    Wu, Dan; Wu, Maocheng; Gu, Jihua

    2017-08-01

    It is noticed that more and more students in college are passionately curious about the optoelectronic technology, since optoelectronic technology has advanced extremely quickly during the last five years and its applications could be found in a lot of domains. The students who are interested in this area may have different educational backgrounds and their majors cover science, engineering, literature and social science, etc. Our course "History of the Optoelectronic Technology" is set up as an interdisciplinary lecture of the "liberal education" at our university, and is available for all students with different academic backgrounds from any departments of our university. The main purpose of the course is to show the interesting and colorful historical aspects of the development of this technology, so that the students from different departments could absorb the academic nourishment they wanted. There are little complex derivations of physical formulas through the whole lecture, but there are still some difficulties about the lecture which is discussed in this paper.

  13. Optoelectronics circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Optoelectronics Circuits Manual covers the basic principles and characteristics of the best known types of optoelectronic devices, as well as the practical applications of many of these optoelectronic devices. The book describes LED display circuits and LED dot- and bar-graph circuits and discusses the applications of seven-segment displays, light-sensitive devices, optocouplers, and a variety of brightness control techniques. The text also tackles infrared light-beam alarms and multichannel remote control systems. The book provides practical user information and circuitry and illustrations.

  14. FABRICATION, MORPHOLOGICAL AND OPTOELECTRONIC ...

    African Journals Online (AJOL)

    2014-12-31

    Dec 31, 2014 ... porous silicon has better optoelectronic properties than bulk .... Measurement: The morphological properties of PS layer such as nanocrystalline size, the .... excess carrier removal by internal recombination and diffusion.

  15. Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

    International Nuclear Information System (INIS)

    Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

    2015-01-01

    Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

  16. Integrated optics and optoelectronics II; Proceedings of the Meeting, San Jose, CA, Sept. 17-19, 1990

    International Nuclear Information System (INIS)

    Wong, Ka-Kha

    1991-01-01

    The present volume on integrated optics and optoelectronics discusses proton- and ion-exchange technologies, radiation effects on GaAs optical system FET devices and on the dynamical behavior of LiNbO3 switching devices, advanced lightwave components and concepts, advanced optical interconnects concepts, advanced aircraft and engine control, IOCs for fiber-optic gyroscopes, and commercial integrated optical devices. Attention is given to integrated optical devices for high-data-rate serial-to-parallel conversion, the design of novel integrated optic devices using depressed index waveguides, and a low-loss L-band microwave fiber-optic link for control of a T/R module. Topics addressed include the temperature and modulation dependence of spectral linewidth in distributed Bragg reflector laser diodes, length-minimization design considerations in photonic integrated circuits incorporating directional couplers, and the photochemical formation of polymeric optical waveguides and devices for optical interconnection applications

  17. Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2$\\cdot 10^{15}$\\,n$_{\\mathrm{eq}}$/cm$^2$

    CERN Document Server

    INSPIRE-00237859; Beimforde, M.; Macchiolo, A.; Moser, H.G.; Nisius, R.; Richter, R.H.

    2011-01-01

    A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to $2\\cdot10^{15}$\\,\

  18. Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2⋅10 15 $n_{eq}$ /cm 2

    CERN Document Server

    Weigell, P; Beimforde, M; Macchiolo, A; Moser, H G; Nisius, R; Richter, R H

    2011-01-01

    A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to 2⋅10 15 \\,\

  19. Optoelectronic Mounting Structure

    Science.gov (United States)

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  20. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  1. Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

    Energy Technology Data Exchange (ETDEWEB)

    Hall, R.B.; Ford, D.H.; Rand, J.A.; Ingram, A.E.

    1999-11-11

    AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

  2. Optical backplane interconnect switch for data processors and computers

    Science.gov (United States)

    Hendricks, Herbert D.; Benz, Harry F.; Hammer, Jacob M.

    1989-01-01

    An optoelectronic integrated device design is reported which can be used to implement an all-optical backplane interconnect switch. The switch is sized to accommodate an array of processors and memories suitable for direct replacement into the basic avionic multiprocessor backplane. The optical backplane interconnect switch is also suitable for direct replacement of the PI bus traffic switch and at the same time, suitable for supporting pipelining of the processor and memory. The 32 bidirectional switchable interconnects are configured with broadcast capability for controls, reconfiguration, and messages. The approach described here can handle a serial interconnection of data processors or a line-to-link interconnection of data processors. An optical fiber demonstration of this approach is presented.

  3. Perovskite Materials: Solar Cell and Optoelectronic Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Bin [ORNL; Geohegan, David B [ORNL; Xiao, Kai [ORNL

    2017-01-01

    Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure, and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.

  4. Network interconnections: an architectural reference model

    NARCIS (Netherlands)

    Butscher, B.; Lenzini, L.; Morling, R.; Vissers, C.A.; Popescu-Zeletin, R.; van Sinderen, Marten J.; Heger, D.; Krueger, G.; Spaniol, O.; Zorn, W.

    1985-01-01

    One of the major problems in understanding the different approaches in interconnecting networks of different technologies is the lack of reference to a general model. The paper develops the rationales for a reference model of network interconnection and focuses on the architectural implications for

  5. Integrated Optical Interconnect Architectures for Embedded Systems

    CERN Document Server

    Nicolescu, Gabriela

    2013-01-01

    This book provides a broad overview of current research in optical interconnect technologies and architectures. Introductory chapters on high-performance computing and the associated issues in conventional interconnect architectures, and on the fundamental building blocks for integrated optical interconnect, provide the foundations for the bulk of the book which brings together leading experts in the field of optical interconnect architectures for data communication. Particular emphasis is given to the ways in which the photonic components are assembled into architectures to address the needs of data-intensive on-chip communication, and to the performance evaluation of such architectures for specific applications.   Provides state-of-the-art research on the use of optical interconnects in Embedded Systems; Begins with coverage of the basics for high-performance computing and optical interconnect; Includes a variety of on-chip optical communication topologies; Features coverage of system integration and opti...

  6. Optoelectronics of Molecules and Polymers

    CERN Document Server

    Moliton, André

    2006-01-01

    Optoelectronic devices are being developed at an extraordinary rate. Organic light emitting diodes, photovoltaic devices and electro-optical modulators are pivotal to the future of displays, photosensors and solar cells, and communication technologies. This book details the theories underlying the relevant mechanisms in organic materials and covers, at a basic level, how the organic components are made. The first part of this book introduces the fundamental theories used to detail ordered solids and localised energy levels. The methods used to determine energy levels in perfectly ordered molecular and macromolecular systems are discussed, making sure that the effects of quasi-particles are not missed. The function of excitons and their transfer between two molecules are studied, and the problems associated with interfaces and charge injection into resistive media are presented. The second part details technological aspects such as the fabrication of devices based on organic materials by dry etching. The princ...

  7. Fluxless Bonding Processes Using Silver-Indium System for High Temperature Electronics and Silver Flip-Chip Interconnect Technology

    Science.gov (United States)

    Wu, Yuan-Yun

    In this dissertation, fluxless silver (Ag)-indium (In) binary system bonding and Ag solid-state bonding are used between different bonded pairs which have large thermal expansion coefficient (CTE) mismatch and flip-chip interconnect bonding application. In contrast to the conventional soldering process, fluxless bonding technique eliminates contamination and reliability problems caused by flux to fabricate high quality joints. There are two section are reported. In the first section, the reactions of Ag-In binary system are presented. In the second section, the high melting temperature, thermal and electrical conductivity joint materials bonding by either Ag-In binary system bonding or solid-state bonding processes for different bonded pairs and flip-chip application are designed, developed, and reported. Our group have studied Ag-In system for several years and developed the bonding processes successfully. However, the detailed reactions of Ag and In were seldom studied. To design a proper bonding structure, it is necessary to understand the reaction between Ag and In. The systematic experiments were performed to investigate these reactions. A 40 um Ag layer was electroplated on copper (Cu) substrates, followed by indium layers of 1, 3, 5, 10, and 15 um, respectively. The samples were annealed at 180 °C in 0.1 torr vacuum. For samples with In thickness less than 5 mum, the joint compositions are Ag2In only (1 um) or AgIn2, Ag2In, and Ag solid solution (Ag) after annealing. No indium is identified. For 10 and 15 um thick In samples, In covers almost over the entire sample surface after annealing. Later, an Ag layer was annealed at 450 °C for 3 hours to grow Ag grains, followed by plating 10 um In and annealing at 180 °C. By annealing Ag before plating In, more In is kept in the structure during annealing at 180 °C. Based on above results, for those designs with In thinner than 5 um, the Ag layer needs to be annealed, prior to In plating in order to make a

  8. Report on technological survey in fiscal 1998. Demonstration test for smoothing grid interconnection (Collection of information by surveys in overseas countries); 1998 nendo keito renkei enkatsuka jissho shiken chosa hokokusho. Kaigai chosa ni yoru joho shushu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Surveys were performed on the institutional aspects of establishment and operation of grid interconnection guidelines in the countries advanced in introduction of discrete power supply systems, namely, England, Ireland, Italy and the United States, as well as on the simulation technologies to realize them technically. In England, the power transmission systems (controller: NGO) and the power distribution systems (controller: PES) are separated, to which grid interconnection operating regulations are provided respectively. Single operation of generators connected to the power distribution system is not permitted substantially. In Ireland, the power transmission and distribution functions are separated, but are in the transition stage. Interconnection, if requested, cannot be rejected except for a case that the interconnection is impossible. Italy has the condition similar to that in Ireland, where no small generators are not permitted of independent operation. America has not unified the operating regulations for grid interconnection, and has apprehension in the independent operation, but no countermeasures have been given. In the simulation technologies, surveys were made on PSS/E, EUROSTAG, and SICRE. The PSS/E is the standard software in America for the current and stability analysis. (NEDO)

  9. Optoelectronic and nonlinear optical processes in low dimensional ...

    Indian Academy of Sciences (India)

    Optoelectronic process; nonlinear optical process; semiconductor. Quest for ever faster and intelligent information processing technologies has sparked ..... Schematic energy level diagram for the proposed 4-level model. States other than the.

  10. Advanced Optoelectronic Components for All-Optical Networks

    National Research Council Canada - National Science Library

    Shapiro, Jeffrey H

    2002-01-01

    Under APOSR Grant F49620-96-1-0126, 'Advanced Optoelectronic Components for All-Optical Networks', we have worked to develop key technologies and components to substantially improve the performance...

  11. Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

    1999-01-01

    Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

  12. Terahertz optoelectronics in graphene

    International Nuclear Information System (INIS)

    Otsuji, Taiichi

    2016-01-01

    Graphene has attracted considerable attention due to its extraordinary carrier transport, optoelectronic, and plasmonic properties originated from its gapless and linear energy spectra enabling various functionalities with extremely high quantum efficiencies that could never be obtained in any existing materials. This paper reviews recent advances in graphene optoelectronics particularly focused on the physics and device functionalities in the terahertz (THz) electromagnetic spectral range. Optical response of graphene is characterized by its optical conductivity and nonequilibrium carrier energy relaxation dynamics, enabling amplification of THz radiation when it is optically or electrically pumped. Current-injection THz lasing has been realized very recently. Graphene plasmon polaritons can greatly enhance the THz light and graphene matter interaction, enabling giant enhancement in detector responsivity as well as amplifier/laser gain. Graphene-based van der Waals heterostructures could give more interesting and energy-efficient functionalities. (author)

  13. Insulating materials for optoelectronics

    International Nuclear Information System (INIS)

    Agullo-Lopez, F.

    1990-01-01

    Optoelectronics is an interdisciplinary field. Basic functions of an optoelectronic system include the generator of the optical signal, its transmission and handling and, finally, its detection, storage and display. A large variety of semiconductor and insulating materials are used or are being considered to perform those functions. The authors focus on insulating materials, mostly oxides. For signal generation, tunable solid state lasers, either vibronic or those based oon colour centres are briefly described, and their main operating parameters summarized. Reference is made to some developments on fiber and waveguide lasers. Relevant physical features of the silica fibres used for low-loss, long-band, optical transmission are reviewed, as well as present efforts to further reduce attenuation in the mid-infrared range. Particular attention is paid to photorefractive materials (LiNbO 3 , BGO, BSO, etc.), which are being investigated

  14. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    CERN Document Server

    Beimforde, Michael

    To extend the discovery potential of the experiments at the LHC accelerator a luminosity upgrade towards the super LHC (sLHC) with an up to ten-fold peak luminosity is planned. Within this thesis a new module concept was developed and evaluated for the operation within an ATLAS pixel detector at the sLHC. This module concept utilizes a novel thin sensor production process for thin n-in-p silicon sensors which potentially allow for a higher radiation hardness at a reduced cost. Furthermore, the new 3D-integration technology ICV-SLID is explored which will allow for increasing the active area of the modules and hence, for employing the modules in the innermost layer of the upgraded ATLAS pixel detector.

  15. Free-Space Optical Interconnect Employing VCSEL Diodes

    Science.gov (United States)

    Simons, Rainee N.; Savich, Gregory R.; Torres, Heidi

    2009-01-01

    Sensor signal processing is widely used on aircraft and spacecraft. The scheme employs multiple input/output nodes for data acquisition and CPU (central processing unit) nodes for data processing. To connect 110 nodes and CPU nodes, scalable interconnections such as backplanes are desired because the number of nodes depends on requirements of each mission. An optical backplane consisting of vertical-cavity surface-emitting lasers (VCSELs), VCSEL drivers, photodetectors, and transimpedance amplifiers is the preferred approach since it can handle several hundred megabits per second data throughput.The next generation of satellite-borne systems will require transceivers and processors that can handle several Gb/s of data. Optical interconnects have been praised for both their speed and functionality with hopes that light can relieve the electrical bottleneck predicted for the near future. Optoelectronic interconnects provide a factor of ten improvement over electrical interconnects.

  16. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    Energy Technology Data Exchange (ETDEWEB)

    Andricek, L. [Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, 81739 Muenchen (Germany); Beimforde, M., E-mail: mibei@mpp.mpg.de [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany); Macchiolo, A. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany); Moser, H.-G. [Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, 81739 Muenchen (Germany); Nisius, R. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany); Richter, R.H. [Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, 81739 Muenchen (Germany)

    2011-04-21

    A new pixel module concept is presented utilizing thin sensors and a novel vertical integration technique for the ATLAS pixel detector in view of the foreseen LHC luminosity upgrades. A first set of pixel sensors with active thicknesses of 75 and 150{mu}m has been produced from wafers of standard thickness using a thinning process developed at the Max-Planck-Institut Halbleiterlabor (HLL) and the Max-Planck-Institut fuer Physik (MPP). Pre-irradiation characterizations of these sensors show a very good device yield and high break down voltage. First proton irradiations up to a fluence of 10{sup 15} n{sub eq} cm{sup -2} have been carried out and their impact on the electrical properties of thin sensors has been studied. The novel ICV-SLID vertical integration technology will allow for routing signals vertically to the back side of the readout chips. With this, four-side buttable detector devices with an increased active area fraction are made possible. A first production of SLID test structures was performed and showed a high connection efficiency for different pad sizes and a mild sensitivity to disturbances of the surface planarity.

  17. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    International Nuclear Information System (INIS)

    Andricek, L.; Beimforde, M.; Macchiolo, A.; Moser, H.-G.; Nisius, R.; Richter, R.H.

    2011-01-01

    A new pixel module concept is presented utilizing thin sensors and a novel vertical integration technique for the ATLAS pixel detector in view of the foreseen LHC luminosity upgrades. A first set of pixel sensors with active thicknesses of 75 and 150μm has been produced from wafers of standard thickness using a thinning process developed at the Max-Planck-Institut Halbleiterlabor (HLL) and the Max-Planck-Institut fuer Physik (MPP). Pre-irradiation characterizations of these sensors show a very good device yield and high break down voltage. First proton irradiations up to a fluence of 10 15 n eq cm -2 have been carried out and their impact on the electrical properties of thin sensors has been studied. The novel ICV-SLID vertical integration technology will allow for routing signals vertically to the back side of the readout chips. With this, four-side buttable detector devices with an increased active area fraction are made possible. A first production of SLID test structures was performed and showed a high connection efficiency for different pad sizes and a mild sensitivity to disturbances of the surface planarity.

  18. Nano crystals for Electronic and Optoelectronic Applications

    International Nuclear Information System (INIS)

    Zhu, T.; Cloutier, S.G.; Ivanov, I; Knappenberger Jr, K.L.; Robel, I.; Zhang, F

    2012-01-01

    Electronic and optoelectronic devices, from computers and smart cell phones to solar cells, have become a part of our life. Currently, devices with featured circuits of 45 nm in size can be fabricated for commercial use. However, further development based on traditional semiconductor is hindered by the increasing thermal issues and the manufacturing cost. During the last decade, nano crystals have been widely adopted in various electronic and optoelectronic applications. They provide alternative options in terms of ease of processing, low cost, better flexibility, and superior electronic/optoelectronic properties. By taking advantage of solution-processing, self-assembly, and surface engineering, nano crystals could serve as new building blocks for low-cost manufacturing of flexible and large area devices. Tunable electronic structures combined with small exciton binding energy, high luminescence efficiency, and low thermal conductivity make nano crystals extremely attractive for FET, memory device, solar cell, solid-state lighting/display, photodetector, and lasing applications. Efforts to harness the nano crystal quantum tunability have led to the successful demonstration of many prototype devices, raising the public awareness to the wide range of solutions that nano technology can provide for an efficient energy economy. This special issue aims to provide the readers with the latest achievements of nano crystals in electronic and optoelectronic applications, including the synthesis and engineering of nano crystals towards the applications and the corresponding device fabrication, characterization and computer modeling.

  19. Design of a highly parallel board-level-interconnection with 320 Gbps capacity

    Science.gov (United States)

    Lohmann, U.; Jahns, J.; Limmer, S.; Fey, D.; Bauer, H.

    2012-01-01

    A parallel board-level interconnection design is presented consisting of 32 channels, each operating at 10 Gbps. The hardware uses available optoelectronic components (VCSEL, TIA, pin-diodes) and a combination of planarintegrated free-space optics, fiber-bundles and available MEMS-components, like the DMD™ from Texas Instruments. As a specific feature, we present a new modular inter-board interconnect, realized by 3D fiber-matrix connectors. The performance of the interconnect is evaluated with regard to optical properties and power consumption. Finally, we discuss the application of the interconnect for strongly distributed system architectures, as, for example, in high performance embedded computing systems and data centers.

  20. Fast modified signal-digit (MSD) multiplication technology and system

    Science.gov (United States)

    Sun, DeGui; He, Li-Ming; Wang, Na-Xin; Weng, Zhao-Heng

    1994-06-01

    In this paper, the carry-free property of modified-signed-digit (MSD) addition is analyzed with a space position logic encoding scheme. On this basis, MSD multiplication is discussed and a fast MSD multiplication system composed of optoelectronic logic technology and a multilayer optical interconnection architecture is propsed and studied. Finally, the effectivity of the fast MSD multiplication system is demostrated by using a 2X2 bit multiplication example and experimental results are given.

  1. Integrated optoelectronic oscillator.

    Science.gov (United States)

    Tang, Jian; Hao, Tengfei; Li, Wei; Domenech, David; Baños, Rocio; Muñoz, Pascual; Zhu, Ninghua; Capmany, José; Li, Ming

    2018-04-30

    With the rapid development of the modern communication systems, radar and wireless services, microwave signal with high-frequency, high-spectral-purity and frequency tunability as well as microwave generator with light weight, compact size, power-efficient and low cost are increasingly demanded. Integrated microwave photonics (IMWP) is regarded as a prospective way to meet these demands by hybridizing the microwave circuits and the photonics circuits on chip. In this article, we propose and experimentally demonstrate an integrated optoelectronic oscillator (IOEO). All of the devices needed in the optoelectronic oscillation loop circuit are monolithically integrated on chip within size of 5×6cm 2 . By tuning the injection current to 44 mA, the output frequency of the proposed IOEO is located at 7.30 GHz with phase noise value of -91 dBc/Hz@1MHz. When the injection current is increased to 65 mA, the output frequency can be changed to 8.87 GHz with phase noise value of -92 dBc/Hz@1MHz. Both of the oscillation frequency can be slightly tuned within 20 MHz around the center oscillation frequency by tuning the injection current. The method about improving the performance of IOEO is carefully discussed at the end of in this article.

  2. Development and operation of interconnections in a restructuring context

    International Nuclear Information System (INIS)

    2003-01-01

    In many countries the electrical network is not fully interconnected and the best technical solution to achieve interconnection has to be found. At the same time the electricity industry is being restructured and interconnecting independent energy markets presents technical challenges. It is therefore timely to consider interconnection development and operation options: examine the benefits of interconnecting electrical networks and the development strategies, review the interconnection design options and the technologies available, identify the operational issues, the security problems of large interconnected systems, the protection issues, consider the impact of the restructuring of the electrical supply industry, assess the political, environmental and social implications of interconnections. reorganized in slovenia from 5-7 april 2004. (author)

  3. Location constrained resource interconnection

    International Nuclear Information System (INIS)

    Hawkins, D.

    2008-01-01

    This presentation discussed issues related to wind integration from the perspective of the California Independent System Operator (ISO). Issues related to transmission, reliability, and forecasting were reviewed. Renewable energy sources currently used by the ISO were listed, and details of a new transmission financing plan designed to address the location constraints of renewable energy sources and provide for new transmission infrastructure was presented. The financing mechanism will be financed by participating transmission owners through revenue requirements. New transmission interconnections will include network facilities and generator tie-lines. Tariff revisions have also been implemented to recover the costs of new facilities and generators. The new transmission project will permit wholesale transmission access to areas where there are significant energy resources that are not transportable. A rate impact cap of 15 per cent will be imposed on transmission owners to mitigate short-term costs to ratepayers. The presentation also outlined energy resource area designation plans, renewable energy forecasts, and new wind technologies. Ramping issues were also discussed. It was concluded that the ISO expects to ensure that 20 per cent of its energy will be derived from renewable energy sources. tabs., figs

  4. Area array interconnection handbook

    CERN Document Server

    Totta, Paul A

    2012-01-01

    Microelectronic packaging has been recognized as an important "enabler" for the solid­ state revolution in electronics which we have witnessed in the last third of the twentieth century. Packaging has provided the necessary external wiring and interconnection capability for transistors and integrated circuits while they have gone through their own spectacular revolution from discrete device to gigascale integration. At IBM we are proud to have created the initial, simple concept of flip chip with solder bump connections at a time when a better way was needed to boost the reliability and improve the manufacturability of semiconductors. The basic design which was chosen for SLT (Solid Logic Technology) in the 1960s was easily extended to integrated circuits in the '70s and VLSI in the '80s and '90s. Three I/O bumps have grown to 3000 with even more anticipated for the future. The package families have evolved from thick-film (SLT) to thin-film (metallized ceramic) to co-fired multi-layer ceramic. A later famil...

  5. Brookhaven segment interconnect

    International Nuclear Information System (INIS)

    Morse, W.M.; Benenson, G.; Leipuner, L.B.

    1983-01-01

    We have performed a high energy physics experiment using a multisegment Brookhaven FASTBUS system. The system was composed of three crate segments and two cable segments. We discuss the segment interconnect module which permits communication between the various segments

  6. Materials for optoelectronic devices, OEICs and photonics

    International Nuclear Information System (INIS)

    Schloetterer, H.; Quillec, M.; Greene, P.D.; Bertolotti, M.

    1991-01-01

    The aim of the contributors in this volume is to give a current overview on the basic properties of nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques from growth (LPE to MOMBE) and for processing from surface passivation to ion beams. Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic materials development, as well as indicating the growth techniques that will be in use around the year 2000

  7. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

    International Nuclear Information System (INIS)

    Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

    2015-01-01

    Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

  8. Deformable paper origami optoelectronic devices

    KAUST Repository

    He, Jr-Hau

    2017-01-19

    Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a deformable pattern. Thin electrode layers and semiconductor nanowire layers can be attached to the substrate, creating the optoelectronic device. The devices can be highly deformable, e.g. capable of undergoing strains of 500% or more, bending angles of 25° or more, and/or twist angles of 270° or more. Methods of making the deformable optoelectronic devices and methods of using, e.g. as a photodetector, are also provided.

  9. Optical Interconnects for Future Data Center Networks

    CERN Document Server

    Bergman, Keren; Tomkos, Ioannis

    2013-01-01

    Optical Interconnects for Future Data Center Networks covers optical networks and how they can provide high bandwidth, energy efficient interconnects with increased communication bandwidth. This volume, with contributions from leading researchers in the field, presents an integrated view of the expected future requirements of data centers and serves as a reference for some of the most advanced and promising solutions proposed by researchers from leading universities, research labs, and companies. The work also includes several novel architectures, each demonstrating different technologies such as optical circuits, optical switching, MIMO optical OFDM, and others. Additionally, Optical Interconnects for Future Data Center Networks provides invaluable insights into the benefits and advantages of optical interconnects and how they can be a promising alternative for future data center networks.

  10. Variation Tolerant On-Chip Interconnects

    CERN Document Server

    Nigussie, Ethiopia Enideg

    2012-01-01

    This book presents design techniques, analysis and implementation of high performance and power efficient, variation tolerant on-chip interconnects.  Given the design paradigm shift to multi-core, interconnect-centric designs and the increase in sources of variability and their impact in sub-100nm technologies, this book will be an invaluable reference for anyone concerned with the design of next generation, high-performance electronics systems. Provides comprehensive, circuit-level explanation of high-performance, energy-efficient, variation-tolerant on-chip interconnect; Describes design techniques to mitigate problems caused by variation; Includes techniques for design and implementation of self-timed on-chip interconnect, delay variation insensitive communication protocols, high speed signaling techniques and circuits, bit-width independent completion detection and process, voltage and temperature variation tolerance.                          

  11. Benefits of transmission interconnections

    International Nuclear Information System (INIS)

    Lyons, D.

    2006-01-01

    The benefits of new power transmission interconnections from Alberta were discussed with reference to the challenges and measures needed to move forward. Alberta's electricity system has had a long period of sustained growth in generation and demand and this trend is expected to continue. However, no new interconnections have been built since 1985 because the transmission network has not expanded in consequence with the growth in demand. As such, Alberta remains weakly interconnected with the rest of the western region. The benefits of stronger transmission interconnections include improved reliability, long-term generation capability, hydrothermal synergies, a more competitive market, system efficiencies and fuel diversity. It was noted that the more difficult challenges are not technical. Rather, the difficult challenges lie in finding an appropriate business model that recognizes different market structures. It was emphasized that additional interconnections are worthwhile and will require significant collaboration among market participants and governments. It was concluded that interties enable resource optimization between systems and their benefits far exceed their costs. tabs., figs

  12. Deformable paper origami optoelectronic devices

    KAUST Repository

    He, Jr-Hau; Lin, Chun-Ho

    2017-01-01

    Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a

  13. Radiation effects in optoelectronic devices

    International Nuclear Information System (INIS)

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given

  14. Reconfigurable Integrated Optoelectronics

    Directory of Open Access Journals (Sweden)

    Richard Soref

    2011-01-01

    Full Text Available Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs and photonic integrated circuits (PICs manufactured in a high-volume foundry. We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics. This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the electro-optical building blocks. We illustrate these modules in detail and discuss 3D ROEIC chips for the highest-performance signal processing. We present examples of our module theory for RPIC optical lattice filters already constructed, and we propose new ROEICs for directed optical logic, large-scale matrix switching, and 2D beamsteering of a phased-array microwave antenna. In general, large-scale-integrated ROEICs will enable significant applications in computing, quantum computing, communications, learning, imaging, telepresence, sensing, RF/microwave photonics, information storage, cryptography, and data mining.

  15. Multilevel Dual Damascene copper interconnections

    Science.gov (United States)

    Lakshminarayanan, S.

    Copper has been acknowledged as the interconnect material for future generations of ICs to overcome the bottlenecks on speed and reliability present with the current Al based wiring. A new set of challenges brought to the forefront when copper replaces aluminum, have to be met and resolved to make it a viable option. Unit step processes related to copper technology have been under development for the last few years. In this work, the application of copper as the interconnect material in multilevel structures with SiO2 as the interlevel dielectric has been explored, with emphasis on integration issues and complete process realization. Interconnect definition was achieved by the Dual Damascene approach using chemical mechanical polishing of oxide and copper. The choice of materials used as adhesion promoter/diffusion barrier included Ti, Ta and CVD TiN. Two different polish chemistries (NH4OH or HNO3 based) were used to form the interconnects. The diffusion barrier was removed during polishing (in the case of TiN) or by a post CMP etch (as with Ti or Ta). Copper surface passivation was performed using boron implantation and PECVD nitride encapsulation. The interlevel dielectric way composed of a multilayer stack of PECVD SiO2 and SixNy. A baseline process sequence which ensured the mechanical and thermal compatibility of the different unit steps was first created. A comprehensive test vehicle was designed and test structures were fabricated using the process flow developed. Suitable modifications were subsequently introduced in the sequence as and when processing problems were encountered. Electrical characterization was performed on the fabricated devices, interconnects, contacts and vias. The structures were subjected to thermal stressing to assess their stability and performance. The measurement of interconnect sheet resistances revealed lower copper loss due to dishing on samples polished using HNO3 based slurry. Interconnect resistances remained stable upto 400o

  16. Research on the application of optoelectronics to nuclear power plants

    International Nuclear Information System (INIS)

    Shirosaki, Hidekazu; Mitsuda, Hiromichi; Kurata, Toshikazu; Soramoto, Seiki; Maekawa, Tatsuyuki.

    1995-01-01

    Optoelectronics, which is based on technologies such as laser diodes and optical fibers, is approaching the realm of practical application in the fields of optical fiber communications and compact disks etc,. In addition, laser enrichment, a type of uranium enrichment technique used in the nuclear field, can also be regarded as a product of optoelectronics. Application of optoelectronics in a wide range of fields is likely to continue in the future, and research is being conducted on coherent optical communication, optical integrated circuits, optical computers and other subjects in hopes of attaining practical application of these technologies in the future. On the other hand, digital control equipment and other related devices have been installed and data transfer using optical fibers has been implemented on a partial basis at nuclear power plants, and optoelectronics is anticipated to be applied on an even broader scale in the future, thereby creating the potential for improving plant reliability. In this research, we conducted an investigative study of technologies relating to optoelectronics, and proposed a remote monitoring system for manually operated valves that employs optical switches. Moreover, we conducted theoretical verification tests on the proposed system and carried out a feasibility study relating to application to nuclear power plants. As a result, the proposed system was found to be effective, and confirmed to have the potential of realization as a valve switching monitoring system. (author)

  17. Advanced educational program in optoelectronics for undergraduates and graduates in electronics

    Science.gov (United States)

    Vladescu, Marian; Schiopu, Paul

    2015-02-01

    The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.

  18. Analysis of optoelectronic strategic planning in Taiwan by artificial intelligence portfolio tool

    Science.gov (United States)

    Chang, Rang-Seng

    1992-05-01

    Taiwan ROC has achieved significant advances in the optoelectronic industry with some Taiwan products ranked high in the world market and technology. Six segmentations of optoelectronic were planned. Each one was divided into several strategic items, design artificial intelligent portfolio tool (AIPT) to analyze the optoelectronic strategic planning in Taiwan. The portfolio is designed to provoke strategic thinking intelligently. This computer- generated strategy should be selected and modified by the individual. Some strategies for the development of the Taiwan optoelectronic industry also are discussed in this paper.

  19. Interconnecting with VIPs

    Science.gov (United States)

    Collins, Robert

    2013-01-01

    Interconnectedness changes lives. It can even save lives. Recently the author got to witness and be part of something in his role as a teacher of primary science that has changed lives: it may even have saved lives. It involved primary science teaching--and the climate. Robert Collins describes how it is all interconnected. The "Toilet…

  20. CAISSON: Interconnect Network Simulator

    Science.gov (United States)

    Springer, Paul L.

    2006-01-01

    Cray response to HPCS initiative. Model future petaflop computer interconnect. Parallel discrete event simulation techniques for large scale network simulation. Built on WarpIV engine. Run on laptop and Altix 3000. Can be sized up to 1000 simulated nodes per host node. Good parallel scaling characteristics. Flexible: multiple injectors, arbitration strategies, queue iterators, network topologies.

  1. FY 1990 Report on the results of the research and development project for the industrial base technologies of the next generation. Research and development of nonlinear optoelectronic materials; 1990 nendo hisenkei hikari denshi zairyo no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1991-03-01

    Described herein are the FY 1990 results of the research and development project for the optoelectronic materials, implemented to cope with the highly information-oriented societies. The FY 1990 is the second year for the phase-I project of the basic plan, and the R and D efforts are directed to elucidation of the mechanisms involved in the nonlinear phenomena, exploration and designs of various materials, and investigations of the technologies for, e.g., the material synthesis and evaluation. The themes to be investigated by the long-term project include exploration and preparation of the superfine particles and base materials for the organic materials; and crystal growth, dispersion of the fine particles and development of the superlattices for development of the materials. The comprehensive investigation and research program investigates the trends of the related technologies, both domestic and foreign. A total of 9 research themes are recommissioned to 9 enterprises. They include organic, low-molecular-weight materials, growth of orientation-controlled crystals, films of high-molecular-weight organic conjugated compounds, glass-dispersed materials (prepared by the vapor-phase, impregnation of porous glass, sol-gel, superlow-melting glass and super-cooling methods), organic dispersed materials, development of the organic superlattices, and development of the three-dimensional superstructures. (NEDO)

  2. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  3. Commercialization issues and funding opportunities for high-performance optoelectronic computing modules

    Science.gov (United States)

    Hessenbruch, John M.; Guilfoyle, Peter S.

    1997-01-01

    Low power, optoelectronic integrated circuits are being developed for high speed switching and data processing applications. These high performance optoelectronic computing modules consist of three primary components: vertical cavity surface emitting lasers, diffractive optical interconnect elements, and detector/amplifier/laser driver arrays. Following the design and fabrication of an HPOC module prototype, selected commercial funding sources will be evaluated to support a product development stage. These include the formation of a strategic alliance with one or more microprocessor or telecommunications vendors, and/or equity investment from one or more venture capital firms.

  4. Health and the environment: Examining some interconnections

    International Nuclear Information System (INIS)

    Nair, G.; Castelino, J.; Parr, R.M.

    1994-01-01

    In various ways, the IAEA is working with national and international agencies to broaden scientific understanding of the interconnections between the environment and human health. Often nuclear and related technologies are applied in the search for answers to complex and puzzling questions. This article highlights some of that work, illustrating the dimensions of both the problems and the potential solutions

  5. Photovoltaic sub-cell interconnects

    Energy Technology Data Exchange (ETDEWEB)

    van Hest, Marinus Franciscus Antonius Maria; Swinger Platt, Heather Anne

    2017-05-09

    Photovoltaic sub-cell interconnect systems and methods are provided. In one embodiment, a photovoltaic device comprises a thin film stack of layers deposited upon a substrate, wherein the thin film stack layers are subdivided into a plurality of sub-cells interconnected in series by a plurality of electrical interconnection structures; and wherein the plurality of electrical interconnection structures each comprise no more than two scribes that penetrate into the thin film stack layers.

  6. Ultrafast Graphene Photonics and Optoelectronics

    Science.gov (United States)

    2017-04-14

    AFRL-AFOSR-JP-TR-2017-0032 Ultrafast Graphene Photonics and Optoelectronics Kuang-Hsiung Wu National Chiao Tung University Final Report 04/14/2017...DATES COVERED (From - To) 18 Apr 2013 to 17 Apr 2016 4. TITLE AND SUBTITLE Ultrafast Graphene Photonics and Optoelectronics 5a.  CONTRACT NUMBER 5b...Prescribed by ANSI Std. Z39.18 Final Report for AOARD Grant FA2386-13-1-4022 “Ultrafast Graphene Photonics and Optoelectronics” Date May 23th, 2016

  7. Electromagnetism and interconnections

    CERN Document Server

    Charruau, S

    2009-01-01

    This book covers the theoretical problems of modeling electrical behavior of the interconnections encountered in everyday electronic products. The coverage shows the theoretical tools of waveform prediction at work in the design of a complex and high-speed digital electronic system. Scientists, research engineers, and postgraduate students interested in electromagnetism, microwave theory, electrical engineering, or the development of simulation tools software for high speed electronic system design automation will find this book an illuminating resource.

  8. Next generation space interconnect research and development in space communications

    Science.gov (United States)

    Collier, Charles Patrick

    2017-11-01

    Interconnect or "bus" is one of the critical technologies in design of spacecraft avionics systems that dictates its architecture and complexity. MIL-STD-1553B has long been used as the avionics backbone technology. As avionics systems become more and more capable and complex, however, limitations of MIL-STD-1553B such as insufficient 1 Mbps bandwidth and separability have forced current avionics architects and designers to use combination of different interconnect technologies in order to meet various requirements: CompactPCI is used for backplane interconnect; LVDS or RS422 is used for low and high-speed direct point-to-point interconnect; and some proprietary interconnect standards are designed for custom interfaces. This results in a very complicated system that consumes significant spacecraft mass and power and requires extensive resources in design, integration and testing of spacecraft systems.

  9. Interconnectivity: Benefits and Challenges

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2010-09-15

    Access to affordable and reliable electricity supplies is a basic prerequisite for economic and social development, prosperity, health, education and all other aspects of modern society. Electricity can be generated both near and far from the consumption areas as transmission lines, grid interconnections and distribution systems can transport it to the final consumer. In the vast majority of countries, the electricity sector used to be owned and run by the state. The wave of privatisation and market introduction in a number of countries and regions which started in the late 1980's has in many cases involved unbundling of generation from transmission and distribution (T and D). This has nearly everywhere exposed transmission bottlenecks limiting the development of well-functioning markets. Transmission on average accounts for about 10-15% of total final kWh cost paid by the end-user but it is becoming a key issue for effective operation of liberalised markets and for their further development. An integrated and adequate transmission infrastructure is of utmost importance for ensuring the delivery of the most competitively priced electricity, including externalities, to customers, both near and far from the power generating facilities. In this report, the role of interconnectivity in the development of energy systems is examined with the associated socio-economic, environmental, financial and regulatory aspects that must be taken into account for successful interconnection projects.

  10. Interconnection of Distributed Energy Resources

    Energy Technology Data Exchange (ETDEWEB)

    Reiter, Emerson [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2017-04-19

    This is a presentation on interconnection of distributed energy resources, including the relationships between different aspects of interconnection, best practices and lessons learned from different areas of the U.S., and an update on technical advances and standards for interconnection.

  11. Digital optical interconnects for photonic computing

    Science.gov (United States)

    Guilfoyle, Peter S.; Stone, Richard V.; Zeise, Frederick F.

    1994-05-01

    A 32-bit digital optical computer (DOC II) has been implemented in hardware utilizing 8,192 free-space optical interconnects. The architecture exploits parallel interconnect technology by implementing microcode at the primitive level. A burst mode of 0.8192 X 1012 binary operations per sec has been reliably demonstrated. The prototype has been successful in demonstrating general purpose computation. In addition to emulating the RISC instruction set within the UNIX operating environment, relational database text search operations have been implemented on DOC II.

  12. Updating Small Generator Interconnection Procedures for New Market Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Coddington, M.; Fox, K.; Stanfield, S.; Varnado, L.; Culley, T.; Sheehan, M.

    2012-12-01

    Federal and state regulators are faced with the challenge of keeping interconnection procedures updated against a backdrop of evolving technology, new codes and standards, and considerably transformed market conditions. This report is intended to educate policymakers and stakeholders on beneficial reforms that will keep interconnection processes efficient and cost-effective while maintaining a safe and reliable power system.

  13. FY 1992 Report on the results of the research and development project for the industrial base technologies of the next generation. Research and development of nonlinear optoelectronic materials; 1992 nendo hisenkei hikari denshi zairyo no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1993-03-01

    Described herein are the FY 1992 results of the research and development project for the optoelectronic materials. The FY 1992 is the last year for the phase-I project of the basic plan, and the results are evaluated mainly viewed from extent of attainment of the interim targets. For the organic materials, the highly unique chiral nonlinear compounds are further developed, and direction for the investigations of the conjugated low-molecular-weight compounds is established. The excellent high-molecular-weight films are developed. For the dispersed materials, those developed include CuCl-dispersed glass, CdTe laminated glass developed by the laser evaporation method, glass dispersed with semiconductors at high concentrations, and dispersed materials with high-molecular-weight materials as the matrices. For the material development, those technologies investigated are orientation controlling of the crystals for thin organic films, and development of superlattices. A total of 9 research themes are recommissioned to 9 enterprises. They include organic, low-molecular-weight materials, growth of orientation-controlled crystals, films of high-molecular-weight organic conjugated compounds, glass-dispersed materials (prepared by the vapor-phase, impregnation of porous glass, sol-gel, superlow-melting glass and super-cooling methods), organic dispersed materials, development of the organic superlattices, and development of the three-dimensional superstructures. (NEDO)

  14. Interconnection policy: a theoretical survey

    Directory of Open Access Journals (Sweden)

    César Mattos

    2003-01-01

    Full Text Available This article surveys the theoretical foundations of interconnection policy. The requirement of an interconnection policy should not be taken for granted in all circumstances, even considering the issue of network externalities. On the other hand, when it is required, an encompassing interconnection policy is usually justified. We provide an overview of the theory on interconnection pricing that results in several different prescriptions depending on which problem the regulator aims to address. We also present a survey on the literature on two-way interconnection.

  15. Fiscal 1998 R and D report on femtosecond technology (ultra-short pulse optoelectronics technology); 1998 nendo femuto byo technology no kenkyu kaihatsu (chotan pulse hikari electronics gijutsu kaihatsu) seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    This report reports the result of the fiscal 1998 R and D on femtosecond technology supported by NEDO. For creation of industrial basic technologies supporting the advanced information society in the 21st century, ultra-high speed electronics technology including new functions beyond the speed limit of conventional electronics technologies is indispensable. From such viewpoint, this R and D aims at establishment of the basic technology necessary for ultra- high speed electronics technology through R and D of technology controlling conditions of beams and electrons in a femtosecond (10{sup -15}-10{sup -12} seconds) region. In fiscal 1998, this project first succeeded in fabrication of a prototype pulse compressor by using semiconductors, and developed a new pulse compressing method by using fibers to generate ultra-short pulse of 38fs. By developing new materials for intersubband transition where ultra-high speed responses can be expected, optical absorption by intersubband transition was first confirmed at optical communication wavelength. The main result for every theme is reported and explained. (NEDO)

  16. LHC beampipe interconnection

    CERN Document Server

    Particle beams circulate for around 10 hours in the Large Hadron Collider (LHC). During this time, the particles make four hundred million revolutions of the machine, travelling a distance equivalent to the diameter of the solar system. The beams must travel in a pipe which is emptied of air, to avoid collisions between the particles and air molecules (which are considerably bigger than protons). The beam pipes are pumped down to an air pressure similar to that on the surface of the moon. Much of the LHC runs at 1.9 degrees above absolute zero. When material is cooled, it contracts. The interconnections must absorb this contraction whilst maintaining electrical connectivity.

  17. Standard cell-based implementation of a digital optoelectronic neural-network hardware.

    Science.gov (United States)

    Maier, K D; Beckstein, C; Blickhan, R; Erhard, W

    2001-03-10

    A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

  18. Telemedicine optoelectronic biomedical data processing system

    Science.gov (United States)

    Prosolovska, Vita V.

    2010-08-01

    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  19. Dental impression technique using optoelectronic devices

    Science.gov (United States)

    Sinescu, Cosmin; Barua, Souman; Topala, Florin Ionel; Negrutiu, Meda Lavinia; Duma, Virgil-Florin; Gabor, Alin Gabriel; Zaharia, Cristian; Bradu, Adrian; Podoleanu, Adrian G.

    2018-03-01

    INTRODUCTION: The use of Optical Coherence Tomography (OCT) as a non-invasive and high precision quantitative information providing tool has been well established by researches within the last decade. The marginal discrepancy values can be scrutinized in optical biopsy made in three dimensional (3D) micro millimetre scale and reveal detailed qualitative and quantitative information of soft and hard tissues. OCT-based high resolution 3D images can provide a significant impact on finding recurrent caries, restorative failure, analysing the precision of crown preparation, and prosthetic elements marginal adaptation error with the gingiva and dental hard tissues. During the CAD/CAM process of prosthodontic restorations, the circumvent of any error is important for the practitioner and the technician to reduce waste of time and material. Additionally, OCT images help to achieve a new or semi-skilled practitioner to analyse their crown preparation works and help to develop their skills faster than in a conventional way. The aim of this study is to highlight the advantages of OCT in high precision prosthodontic restorations. MATERIALS AND METHODS: 25 preparations of frontal and lateral teeth were performed for 7 different patients. The impressions of the prosthetic fields were obtained both using a conventional optoelectronic system (Apolo Di, Syrona) and a Spectral Domain using OCT (Dental prototype, working at 860 nm). For the conventional impression technique the preparation margins were been prelevated by gingival impregnated cords. No specific treatments were performed by the OCT impression technique. RESULTS: The scanning performed by conventional optoelectronic system proved to be quick and accurate in terms of impression technology. The results were represented by 3D virtual models obtained after the scanning procedure was completed. In order to obtain a good optical impression a gingival retraction cord was inserted between the prepared tooth and the gingival

  20. Optoelectronic inventory system for special nuclear material

    International Nuclear Information System (INIS)

    Sieradzki, F.H.

    1994-01-01

    In support of the Department of Energy's Dismantlement Program, the Optoelectronics Characterization and Sensor Development Department 2231 at Sandia National Laboratories/New Mexico has developed an in situ nonintrusive Optoelectronic Inventory System (OIS) that has the potential for application wherever periodic inventory of selected material is desired. Using a network of fiber-optic links, the OIS retrieves and stores inventory signatures from data storage devices (which are permanently attached to material storage containers) while inherently providing electromagnetic pulse immunity and electrical noise isolation. Photovoltaic cells (located within the storage facility) convert laser diode optic power from a laser driver to electrical energy. When powered and triggered, the data storage devices sequentially output their digital inventory signatures through light-emitting diode/photo diode data links for retrieval and storage in a mobile data acquisition system. An item's exact location is determined through fiber-optic network and software design. The OIS provides an on-demand method for obtaining acceptable inventory reports while eliminating the need for human presence inside the material storage facility. By using modularization and prefabricated construction with mature technologies and components, an OIS installation with virtually unlimited capacity can be tailored to the customer's requirements

  1. Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance

    KAUST Repository

    Banavoth, Murali; Yengel, Emre; Peng, Wei; Chen, Zhijie; Alias, Mohd Sharizal; Alarousu, Erkki; Ooi, Boon S.; Burlakov, Victor; Goriely, Alain; Eddaoudi, Mohamed; Bakr, Osman; Mohammed, Omar F.

    2016-01-01

    Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including

  2. Modeling of Optoelectronic Devices

    Science.gov (United States)

    Li, Jian-Zhong; Woo, Alex C. (Technical Monitor)

    2000-01-01

    Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.

  3. An interconnecting bus power optimization method combining interconnect wire spacing with wire ordering

    International Nuclear Information System (INIS)

    Zhu Zhang-Ming; Hao Bao-Tian; En Yun-Fei; Yang Yin-Tang; Li Yue-Jin

    2011-01-01

    On-chip interconnect buses consume tens of percents of dynamic power in a nanometer scale integrated circuit and they will consume more power with the rapid scaling down of technology size and continuously rising clock frequency, therefore it is meaningful to lower the interconnecting bus power in design. In this paper, a simple yet accurate interconnect parasitic capacitance model is presented first and then, based on this model, a novel interconnecting bus optimization method is proposed. Wire spacing is a process for spacing wires for minimum dynamic power, while wire ordering is a process that searches for wire orders that maximally enhance it. The method, i.e., combining wire spacing with wire ordering, focuses on bus dynamic power optimization with a consideration of bus performance requirements. The optimization method is verified based on various nanometer technology parameters, showing that with 50% slack of routing space, 25.71% and 32.65% of power can be saved on average by the proposed optimization method for a global bus and an intermediate bus, respectively, under a 65-nm technology node, compared with 21.78% and 27.68% of power saved on average by uniform spacing technology. The proposed method is especially suitable for computer-aided design of nanometer scale on-chip buses. (interdisciplinary physics and related areas of science and technology)

  4. Visualizing interconnections among climate risks

    Science.gov (United States)

    Tanaka, K.; Yokohata, T.; Nishina, K.; Takahashi, K.; Emori, S.; Kiguchi, M.; Iseri, Y.; Honda, Y.; Okada, M.; Masaki, Y.; Yamamoto, A.; Shigemitsu, M.; Yoshimori, M.; Sueyoshi, T.; Hanasaki, N.; Ito, A.; Sakurai, G.; Iizumi, T.; Nishimori, M.; Lim, W. H.; Miyazaki, C.; Kanae, S.; Oki, T.

    2015-12-01

    It is now widely recognized that climate change is affecting various sectors of the world. Climate change impact on one sector may spread out to other sectors including those seemingly remote, which we call "interconnections of climate risks". While a number of climate risks have been identified in the Intergovernmental Panel on Climate Change (IPCC) Fifth Assessment Report (AR5), there has been no attempt to explore their interconnections comprehensively. Here we present a first and most exhaustive visualization of climate risks drawn based on a systematic literature survey. Our risk network diagrams depict that changes in the climate system impact natural capitals (terrestrial water, crop, and agricultural land) as well as social infrastructures, influencing the socio-economic system and ultimately our access to food, water, and energy. Our findings suggest the importance of incorporating climate risk interconnections into impact and vulnerability assessments and call into question the widely used damage function approaches, which address a limited number of climate change impacts in isolation. Furthermore, the diagram is useful to educate decision makers, stakeholders, and general public about cascading risks that can be triggered by the climate change. Socio-economic activities today are becoming increasingly more inter-dependent because of the rapid technological progress, urbanization, and the globalization among others. Equally complex is the ecosystem that is susceptible to climate change, which comprises interwoven processes affecting one another. In the context of climate change, a number of climate risks have been identified and classified according to regions and sectors. These reports, however, did not fully address the inter-relations among risks because of the complexity inherent in this issue. Climate risks may ripple through sectors in the present inter-dependent world, posing a challenge ahead of us to maintain the resilience of the system. It is

  5. Mid-infrared Semiconductor Optoelectronics

    CERN Document Server

    Krier, Anthony

    2006-01-01

    The practical realisation of optoelectronic devices operating in the 2–10 µm (mid-infrared) wavelength range offers potential applications in a variety of areas from environmental gas monitoring around oil rigs and landfill sites to the detection of pharmaceuticals, particularly narcotics. In addition, an atmospheric transmission window exists between 3 µm and 5 µm that enables free-space optical communications, thermal imaging applications and the development of infrared measures for "homeland security". Consequently, the mid-infrared is very attractive for the development of sensitive optical sensor instrumentation. Unfortunately, the nature of the likely applications dictates stringent requirements in terms of laser operation, miniaturisation and cost that are difficult to meet. Many of the necessary improvements are linked to a better ability to fabricate and to understand the optoelectronic properties of suitable high-quality epitaxial materials and device structures. Substantial progress in these m...

  6. Integrated NEMS and optoelectronics for sensor applications.

    Energy Technology Data Exchange (ETDEWEB)

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R. (Symphony Acoustics, Rio Rancho, NM); Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade (Symphony Acoustics, Rio Rancho, NM); Okandan, Murat; Peterson, Kenneth Allen

    2008-01-01

    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  7. Fuel cell system with interconnect

    Science.gov (United States)

    Goettler, Richard; Liu, Zhien

    2017-12-12

    The present invention includes a fuel cell system having a plurality of adjacent electrochemical cells formed of an anode layer, a cathode layer spaced apart from the anode layer, and an electrolyte layer disposed between the anode layer and the cathode layer. The fuel cell system also includes at least one interconnect, the interconnect being structured to conduct free electrons between adjacent electrochemical cells. Each interconnect includes a primary conductor embedded within the electrolyte layer and structured to conduct the free electrons.

  8. High efficiency optoelectronic terahertz sources

    Science.gov (United States)

    Lampin, Jean-François; Peytavit, Emilien; Akalin, Tahsin; Ducournau, G.; Hindle, Francis; Mouret, Gael

    2010-08-01

    We have developed a new generation of optoelectronic large bandwidth terahertz sources based on TEM horn antennas monolithically integrated with several types of photodetectors: low-temperature grown GaAs (LTG-GaAs) planar photoconductors, vertically integrated LTG-GaAs photoconductors on silicon substrate and uni-travelling-carrier photodiodes. Results of pulsed (time-domain) and photomixing (CW, frequency domain) experiments are presented.

  9. Organic 'Plastic' Optoelectronic Devices

    International Nuclear Information System (INIS)

    Sariciftci, N.S.

    2006-01-01

    Recent developments on conjugated polymer based photovoltaic diodes and photoactive organic field effect transistors (photOFETs) are discussed. The photophysics of such devices is based on the photoinduced charge transfer from donor type semiconducting conjugated polymers onto acceptor type conjugated polymers or acceptor molecules such as Buckminsterfullerene, C 6 0. Potentially interesting applications include sensitization of the photoconductivity and photovoltaic phenomena as well as photoresponsive organic field effect transistors (photOFETs). Furthermore, organic polymeric/inorganic nanoparticle based 'hybrid' solar cells will be discussed. This talk gives an overview of materials' aspect, charge-transport, and device physics of organic diodes and field-effect transistors. Furthermore, due to the compatibility of carbon/hydrogen based organic semiconductors with organic biomolecules and living cells there can be a great opportunity to integrate such organic semiconductor devices (biOFETs) with the living organisms. In general the largely independent bio/lifesciences and information technology of today, can be thus bridged in an advanced cybernetic approach using organic semiconductor devices embedded in bio-lifesciences. This field of bio-organic electronic devices is proposed to be an important mission of organic semiconductor devices

  10. Epidemics on interconnected networks

    Science.gov (United States)

    Dickison, Mark; Havlin, S.; Stanley, H. E.

    2012-06-01

    Populations are seldom completely isolated from their environment. Individuals in a particular geographic or social region may be considered a distinct network due to strong local ties but will also interact with individuals in other networks. We study the susceptible-infected-recovered process on interconnected network systems and find two distinct regimes. In strongly coupled network systems, epidemics occur simultaneously across the entire system at a critical infection strength βc, below which the disease does not spread. In contrast, in weakly coupled network systems, a mixed phase exists below βc of the coupled network system, where an epidemic occurs in one network but does not spread to the coupled network. We derive an expression for the network and disease parameters that allow this mixed phase and verify it numerically. Public health implications of communities comprising these two classes of network systems are also mentioned.

  11. Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, H.; Detavenier, C.; Straten, O. van der; Rossnagel, S.M.; Kellock, A.J.; Park, D.-G.

    2005-01-01

    TaN x diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce TaN x thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6 nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the better diffusion barrier properties compared to polycrystalline PE-ALD TaN films deposited from TaCl 5

  12. A one-semester course in modeling of VSLI interconnections

    CERN Document Server

    Goel, Ashok

    2015-01-01

    Quantitative understanding of the parasitic capacitances and inductances, and the resultant propagation delays and crosstalk phenomena associated with the metallic interconnections on the very large scale integrated (VLSI) circuits has become extremely important for the optimum design of the state-of-the-art integrated circuits. More than 65 percent of the delays on the integrated circuit chip occur in the interconnections and not in the transistors on the chip. Mathematical techniques to model the parasitic capacitances, inductances, propagation delays, crosstalk noise, and electromigration-induced failure associated with the interconnections in the realistic high-density environment on a chip will be discussed. A One-Semester Course in Modeling of VLSI Interconnections also includes an overview of the future interconnection technologies for the nanotechnology circuits.

  13. Electroactive and Optoelectronically Active Graphene Nanofilms

    DEFF Research Database (Denmark)

    Chi, Qijin

    As an atomic-scale-thick two-dimensional material, graphene has emerged as one of the most miracle materials and has generated intensive interest in physics, chemistry and even biology in the last decade [1, 2]. Nanoscale engineering and functionalization of graphene is a crucial step for many...... applications ranging from catalysis, electronic devices, sensors to advanced energy conversion and storage [3]. This talk highlights our recent studies on electroactive and optoelectronically active graphene ultrathin films for chemical sensors and energy technology. The presentation includes a general theme...... for functionalization of graphene nanosheets, followed by showing several case studies. Our systems cover redox-active nanoparticles, electroactive supramolecular ensembles and redox enzymes which are integrated with graphene nanosheets as building blocks for the construction of functional thin films or graphene papers....

  14. Seeing smells: development of an optoelectronic nose

    Directory of Open Access Journals (Sweden)

    Kenneth S. Suslick

    2007-06-01

    Full Text Available The development of an array of chemically-responsive dyes on a porous membrane and in its use as a general sensor for odors and volatile organic compounds (VOCs is reviewed. These colorimetric sensor arrays (CSA act as an "optoelectronic nose" by using an array of multiple dyes whose color changes are based on the full range of intermolecular interactions. The CSA is digitally imaged before and after exposure and the resulting difference map provides a digital fingerprint for any VOC or mixture of odorants. The result is an enormous increase in discriminatory power among odorants compared to prior electronic nose technologies. For the detection of biologically important analytes, including amines, carboxylic acids, and thiols, high sensitivities (ppbv have been demonstrated. The array is essentially non-responsive to changes in humidity due to the hydrophobicity of the dyes and membrane.

  15. Implantable optoelectronic probes for in vivo optogenetics

    Science.gov (United States)

    Iseri, Ege; Kuzum, Duygu

    2017-06-01

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  16. Adapting Memory Hierarchies for Emerging Datacenter Interconnects

    Institute of Scientific and Technical Information of China (English)

    江涛; 董建波; 侯锐; 柴琳; 张立新; 孙凝晖; 田斌

    2015-01-01

    Efficient resource utilization requires that emerging datacenter interconnects support both high performance communication and efficient remote resource sharing. These goals require that the network be more tightly coupled with the CPU chips. Designing a new interconnection technology thus requires considering not only the interconnection itself, but also the design of the processors that will rely on it. In this paper, we study memory hierarchy implications for the design of high-speed datacenter interconnects—particularly as they affect remote memory access—and we use PCIe as the vehicle for our investigations. To that end, we build three complementary platforms: a PCIe-interconnected prototype server with which we measure and analyze current bottlenecks; a software simulator that lets us model microarchitectural and cache hierarchy changes;and an FPGA prototype system with a streamlined switchless customized protocol Thunder with which we study hardware optimizations outside the processor. We highlight several architectural modifications to better support remote memory access and communication, and quantify their impact and limitations.

  17. High-density hybrid interconnect methodologies

    International Nuclear Information System (INIS)

    John, J.; Zimmermann, L.; Moor, P.De; Hoof, C.Van

    2003-01-01

    Full text: The presentation gives an overview of the state-of-the-art of hybrid integration and in particular the IMEC technological approaches that will be able to address future hybrid detector needs. The dense hybrid flip-chip integration of an array of detectors and its dedicated readout electronics can be achieved with a variety of solderbump techniques such as pure Indium or Indium alloys, Ph-In, Ni/PbSn, but also conducting polymers... Particularly for cooled applications or ultra-high density applications, Indium solderbump technology (electroplated or evaporated) is the method of choice. The state-of-the-art of solderbump technologies that are to a high degree independent of the underlying detector material will be presented and examples of interconnect densities between 5x1E4cm-2 and 1x1E6 cm-2 will be demonstrated. For several classes of detectors, flip-chip integration is not allowed since the detectors have to be illuminated from the top. This applies to image sensors for EUV applications such as GaN/AlGaN based detectors and to MEMS-based sensors. In such cases, the only viable interconnection method has to be through the (thinned) detector wafer followed by a solderbump-based integration. The approaches for dense and ultra-dense through-the-wafer interconnect 'vias' will be presented and wafer thinning approaches will be shown

  18. Digital optical computers at the optoelectronic computing systems center

    Science.gov (United States)

    Jordan, Harry F.

    1991-01-01

    The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

  19. Metal Complexes for Organic Optoelectronic Applications

    Science.gov (United States)

    Huang, Liang

    Organic optoelectronic devices have drawn extensive attention by over the past two decades. Two major applications for Organic optoelectronic devices are efficient organic photovoltaic devices(OPV) and organic light emitting diodes (OLED). Organic Solar cell has been proven to be compatible with the low cost, large area bulk processing technology and processed high absorption efficiencies compared to inorganic solar cells. Organic light emitting diodes are a promising approach for display and solid state lighting applications. To improve the efficiency, stability, and materials variety for organic optoelectronic devices, several emissive materials, absorber-type materials, and charge transporting materials were developed and employed in various device settings. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. In this thesis, Chapter 1 provides an introduction to the background knowledge of OPV and OLED research fields presented. Chapter 2 discusses new porphyrin derivatives- azatetrabenzylporphyrins for OPV and near infrared OLED applications. A modified synthetic method is utilized to increase the reaction yield of the azatetrabenzylporphyrin materials and their photophysical properties, electrochemical properties are studied. OPV devices are also fabricated using Zinc azatetrabenzylporphyrin as donor materials. Pt(II) azatetrabenzylporphyrin were also synthesized and used in near infra-red OLED to achieve an emission over 800 nm with reasonable external quantum efficiencies. Chapter 3, discusses the synthesis, characterization, and device evaluation of a series of tetradentate platinum and palladium complexesfor single doped white OLED applications and RGB white OLED applications. Devices employing some of the developed emitters demonstrated impressively high external quantum efficiencies within the range of 22%-27% for various emitter concentrations. And the palladium complex, i

  20. Interconnecting heterogeneous database management systems

    Science.gov (United States)

    Gligor, V. D.; Luckenbaugh, G. L.

    1984-01-01

    It is pointed out that there is still a great need for the development of improved communication between remote, heterogeneous database management systems (DBMS). Problems regarding the effective communication between distributed DBMSs are primarily related to significant differences between local data managers, local data models and representations, and local transaction managers. A system of interconnected DBMSs which exhibit such differences is called a network of distributed, heterogeneous DBMSs. In order to achieve effective interconnection of remote, heterogeneous DBMSs, the users must have uniform, integrated access to the different DBMs. The present investigation is mainly concerned with an analysis of the existing approaches to interconnecting heterogeneous DBMSs, taking into account four experimental DBMS projects.

  1. Si micro photonics for optical interconnection

    International Nuclear Information System (INIS)

    Wada, K.; Ahn, D.H.; Lim, D.R.; Michel, J.; Kimerling, L.C.

    2006-01-01

    This paper reviews current status of silicon microphotonics and the recent prototype of on-chip optical interconnection. Si microphotonics pursues complementary metal oxide semiconductor (CMOS)-compatibility of photonic devices to reduce the materials diversity eventually to integrate on Si chips. Fractal optical H-trees have been implemented on a chip and found to be a technology breakthrough beyond metal interconnection. It has shown that large RC time constants associated with metal can be eliminated at least long distant data communication on a chip, and eventually improve yield and power issues. This has become the world's first electronic and photonic integrated circuits (EPICs) and the possibility of at least 10 GHz clocking for personal computers has been demonstrated

  2. Accurate Modeling Method for Cu Interconnect

    Science.gov (United States)

    Yamada, Kenta; Kitahara, Hiroshi; Asai, Yoshihiko; Sakamoto, Hideo; Okada, Norio; Yasuda, Makoto; Oda, Noriaki; Sakurai, Michio; Hiroi, Masayuki; Takewaki, Toshiyuki; Ohnishi, Sadayuki; Iguchi, Manabu; Minda, Hiroyasu; Suzuki, Mieko

    This paper proposes an accurate modeling method of the copper interconnect cross-section in which the width and thickness dependence on layout patterns and density caused by processes (CMP, etching, sputtering, lithography, and so on) are fully, incorporated and universally expressed. In addition, we have developed specific test patterns for the model parameters extraction, and an efficient extraction flow. We have extracted the model parameters for 0.15μm CMOS using this method and confirmed that 10%τpd error normally observed with conventional LPE (Layout Parameters Extraction) was completely dissolved. Moreover, it is verified that the model can be applied to more advanced technologies (90nm, 65nm and 55nm CMOS). Since the interconnect delay variations due to the processes constitute a significant part of what have conventionally been treated as random variations, use of the proposed model could enable one to greatly narrow the guardbands required to guarantee a desired yield, thereby facilitating design closure.

  3. Optoelectronics-related competence building in Japanese and Western firms

    Science.gov (United States)

    Miyazaki, Kumiko

    1992-05-01

    In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.

  4. Opto-electronic system for a formal neural network

    Science.gov (United States)

    Heggarty, Keven

    A study on the construction of an optoelectronic system which makes use of the capacities of holographic optics for performing interconnections is presented. In the chosen application (digit recognition) the system acts as an associative memory treating two dimensional data structures (images) in parallel. Starting from the Hopfield model, the synaptic matrix algorithm is modified to adapt the network to optical implementation and improve its discrimination of similar memory vectors. The approach leads to a correlation-reconstruction interpretation of pseudo-inverse techniques. The coding of the computed generated hologram used to perform the connections between two planes which form the outputs and the inputs of the neurons is addressed. This hologram is unusual in that it fulfills simultaneously the necessary correlation and reconstruction functions. The standard techniques of digital holography, usually optimized for one or the other of these functions, is therefore adapted to the specific needs of the connection hologram. In particular, the reduction of the dynamic range of the hologram, whilst retaining the correlation function and a useful degree of shift invariance, is demonstrated. The construction of the prototype system and the adaptation of a laser lithography facility to the fabrication of the holograms are described. The potential of the system is illustrated with experimental results demonstrating its capacity to recognize and discriminate to correlated images from noisy, translated input images. Generalization of the system for use as an interconnection stage in more complicated architectures is illustrated.

  5. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica

    2017-03-30

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  6. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica; De Wolf, Stefaan; Woods-Robinson, Rachel; Ager, Joel W.; Ballif, Christophe

    2017-01-01

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  7. Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

    Science.gov (United States)

    Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

    2016-06-01

    Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Recent advances in flexible and wearable organic optoelectronic devices

    Science.gov (United States)

    Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

    2018-01-01

    Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

  9. Misalignment corrections in optical interconnects

    Science.gov (United States)

    Song, Deqiang

    Optical interconnects are considered a promising solution for long distance and high bitrate data transmissions, outperforming electrical interconnects in terms of loss and dispersion. Due to the bandwidth and distance advantage of optical interconnects, longer links have been implemented with optics. Recent studies show that optical interconnects have clear advantages even at very short distances---intra system interconnects. The biggest challenge for such optical interconnects is the alignment tolerance. Many free space optical components require very precise assembly and installation, and therefore the overall cost could be increased. This thesis studied the misalignment tolerance and possible alignment correction solutions for optical interconnects at backplane or board level. First the alignment tolerance for free space couplers was simulated and the result indicated the most critical alignments occur between the VCSEL, waveguide and microlens arrays. An in-situ microlens array fabrication method was designed and experimentally demonstrated, with no observable misalignment with the waveguide array. At the receiver side, conical lens arrays were proposed to replace simple microlens arrays for a larger angular alignment tolerance. Multilayer simulation models in CodeV were built to optimized the refractive index and shape profiles of the conical lens arrays. Conical lenses fabricated with micro injection molding machine and fiber etching were characterized. Active component VCSOA was used to correct misalignment in optical connectors between the board and backplane. The alignment correction capability were characterized for both DC and AC (1GHz) optical signal. The speed and bandwidth of the VCSOA was measured and compared with a same structure VCSEL. Based on the optical inverter being studied in our lab, an all-optical flip-flop was demonstrated using a pair of VCSOAs. This memory cell with random access ability can store one bit optical signal with set or

  10. Report on technological survey in fiscal 1999. Demonstration test for smoothing grid interconnection (Collection of information by surveys in overseas countries); 1999 nendo keito renkei enkatsuka jissho shiken chosa hokokusho. Kaigai chosa ni yoru joho shushu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Surveys were performed on the institutional aspects of establishment and operation of grid interconnection guidelines in the countries advanced in introduction of discrete power supply systems. The survey items for America include: (1) summary of the status related to grid interconnection, (2) grid interconnection process, (3) methods for paying expenses for increasing power transmission facilities by means of grid interconnection, (4) dispute processing, (5) information release, and (6) software. The survey items for England, Germany, and France include: (1) summary of electricity business, (2) regulation patterns in electricity business, (3) summary of grid operating organizations, (4) connection to grid interconnection systems, and (5) the future liberalization programs. America is establishing standards for grid interconnection in discrete power supplies including photovoltaic power generation and energy storage under SCC21 of IEEE, whose conclusion will be drawn in the end of 2000. The Energy Department has an intention to give the standards the legal bases to operate them under unified requirements. Germany, England and France have all established standards for operating the grid interconnection. Market liberalization for electric power retailing is advancing in the order of America, England, Germany, and France. (NEDO)

  11. National Offshore Wind Energy Grid Interconnection Study

    Energy Technology Data Exchange (ETDEWEB)

    Daniel, John P. [ABB Inc; Liu, Shu [ABB Inc; Ibanez, Eduardo [National Renewable Energy Laboratory; Pennock, Ken [AWS Truepower; Reed, Greg [University of Pittsburgh; Hanes, Spencer [Duke Energy

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States. A total of 54GW of offshore wind was assumed to be the target for the analyses conducted. A variety of issues are considered including: the anticipated staging of offshore wind; the offshore wind resource availability; offshore wind energy power production profiles; offshore wind variability; present and potential technologies for collection and delivery of offshore wind energy to the onshore grid; potential impacts to existing utility systems most likely to receive large amounts of offshore wind; and regulatory influences on offshore wind development. The technologies considered the reliability of various high-voltage ac (HVAC) and high-voltage dc (HVDC) technology options and configurations. The utility system impacts of GW-scale integration of offshore wind are considered from an operational steady-state perspective and from a regional and national production cost perspective.

  12. Manufacturing of planar ceramic interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, B.L.; Coffey, G.W.; Meinhardt, K.D.; Armstrong, T.R. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-12-31

    The fabrication of ceramic interconnects for solid oxide fuel cells (SOFC) and separator plates for electrochemical separation devices has been a perennial challenge facing developers. Electrochemical vapor deposition (EVD), plasma spraying, pressing, tape casting and tape calendering are processes that are typically utilized to fabricate separator plates or interconnects for the various SOFC designs and electrochemical separation devices. For sake of brevity and the selection of a planar fuel cell or gas separation device design, pressing will be the only fabrication technique discussed here. This paper reports on the effect of the characteristics of two doped lanthanum manganite powders used in the initial studies as a planar porous separator for a fuel cell cathode and as a dense interconnect for an oxygen generator.

  13. A metallic buried interconnect process for through-wafer interconnection

    International Nuclear Information System (INIS)

    Ji, Chang-Hyeon; Herrault, Florian; Allen, Mark G

    2008-01-01

    In this paper, we present the design, fabrication process and experimental results of electroplated metal interconnects buried at the bottom of deep silicon trenches with vertical sidewalls. A manual spray-coating process along with a unique trench-formation process has been developed for the electroplating of a metal interconnection structure at the bottom surface of the deep trenches. The silicon etch process combines the isotropic dry etch process and conventional Bosch process to fabricate a deep trench with angled top-side edges and vertical sidewalls. The resulting trench structure, in contrast to the trenches fabricated by wet anisotropic etching, enables spray-coated photoresist patterning with good sidewall and top-side edge coverage while maintaining the ability to form a high-density array of deep trenches without excessive widening of the trench opening. A photoresist spray-coating process was developed and optimized for the formation of electroplating mold at the bottom of 300 µm deep trenches having vertical sidewalls. A diluted positive tone photoresist with relatively high solid content and multiple coating with baking between coating steps has been experimentally proven to provide high quality sidewall and edge coverage. To validate the buried interconnect approach, a three-dimensional daisy chain structure having a buried interconnect as the bottom connector and traces on the wafer surface as the top conductor has been designed and fabricated

  14. Cellular structures with interconnected microchannels

    Science.gov (United States)

    Shaefer, Robert Shahram; Ghoniem, Nasr M.; Williams, Brian

    2018-01-30

    A method for fabricating a cellular tritium breeder component includes obtaining a reticulated carbon foam skeleton comprising a network of interconnected ligaments. The foam skeleton is then melt-infiltrated with a tritium breeder material, for example, lithium zirconate or lithium titanate. The foam skeleton is then removed to define a cellular breeder component having a network of interconnected tritium purge channels. In an embodiment the ligaments of the foam skeleton are enlarged by adding carbon using chemical vapor infiltration (CVI) prior to melt-infiltration. In an embodiment the foam skeleton is coated with a refractory material, for example, tungsten, prior to melt infiltration.

  15. Hybrid optoelectronic device with multiple bistable outputs

    Energy Technology Data Exchange (ETDEWEB)

    Costazo-Caso, Pablo A; Jin Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.are, E-mail: granieri@rose-hulma.edu, E-mail: siahmako@rose-hulma.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

    2011-01-01

    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  16. Recent trend in graphene for optoelectronics

    International Nuclear Information System (INIS)

    Chen, Yu-Bin; Liu, John S.; Lin Pang

    2013-01-01

    This study analyzes the scientific knowledge diffusion paths of graphene for optoelectronics (GFO), where graphene offers wide applications due to its thinness, high conductivity, excellent transparency, chemical stability, robustness, and flexibility. Our investigation is based on the main path analysis which establishes the citation links among the literature data in order to trace the significant sequence of knowledge development in this emerging field. We identify the main development paths of GFO up to the year 2012, along which a series of influential papers in this field are identified. The main path graph shows that knowledge diffusion occurs in key subareas, including reduced graphene oxide, chemical vapor deposition, and exfoliation techniques, which are developed for the preparation and applications of GFO. The applications cover solar cells, laser devices, sensing devices, and LCD. In addition, the main theme of GFO research evolves in sequence from small-graphene-sample preparation, to large-scale film growth, and onto prototype device fabrication. This evolution reflects a strong industrial demand for a new transparent–conductive film technology.

  17. Ultrafast characterization of optoelectronic devices and systems

    Science.gov (United States)

    Zheng, Xuemei

    The recent fast growth in high-speed electronics and optoelectronics has placed demanding requirements on testing tools. Electro-optic (EO) sampling is a well-established technique for characterization of high-speed electronic and optoelectronic devices and circuits. However, with the progress in device miniaturization, lower power consumption (smaller signal), and higher throughput (higher clock rate), EO sampling also needs to be updated, accordingly, towards better signal-to-noise ratio (SNR) and sensitivity, without speed sacrifice. In this thesis, a novel EO sampler with a single-crystal organic 4-dimethylamino-N-methy-4-stilbazolium tosylate (DAST) as the EO sensor is developed. The system exhibits sub-picosecond temporal resolution, sub-millivolt sensitivity, and a 10-fold improvement on SNR, compared with its LiTaO3 counterpart. The success is attributed to the very high EO coefficient, the very low dielectric constant, and the fast response, coming from the major contribution of the pi-electrons in DAST. With the advance of ultrafast laser technology, low-noise and compact femtosecond fiber lasers have come to maturation and become light-source options for ultrafast metrology systems. We have successfully integrated a femtosecond erbium-doped-fiber laser into an EO sampler, making the system compact and very reliable. The fact that EO sampling is essentially an impulse-response measurement process, requires integration of ultrashort (sub-picosecond) impulse generation network with the device under test. We have implemented a reliable lift-off and transfer technique in order to obtain epitaxial-quality freestanding low-temperature-grown GaAs (LT-GaAs) thin-film photo-switches, which can be integrated with many substrates. The photoresponse of our freestanding LT-GaAs devices was thoroughly characterized with the help of our EO sampler. As fast as 360 fs full-width-at-half-maximum (FWHM) and >1 V electrical pulses were obtained, with quantum efficiency

  18. Metamaterial mirrors in optoelectronic devices

    KAUST Repository

    Esfandyarpour, Majid

    2014-06-22

    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

  19. Metamaterial mirrors in optoelectronic devices

    KAUST Repository

    Esfandyarpour, Majid; Garnett, Erik C.; Cui, Yi; McGehee, Michael D.; Brongersma, Mark L.

    2014-01-01

    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

  20. Fusion-bonded fluidic interconnects

    NARCIS (Netherlands)

    Fazal, I.; Elwenspoek, Michael Curt

    2008-01-01

    A new approach to realize fluidic interconnects based on the fusion bonding of glass tubes with silicon is presented. Fusion bond strength analyses have been carried out. Experiments with plain silicon wafers and coated with silicon oxide and silicon nitride are performed. The obtained results are

  1. Nanophotonic Devices for Optical Interconnect

    DEFF Research Database (Denmark)

    Van Thourhout, D.; Spuesens, T.; Selvaraja, S.K.

    2010-01-01

    We review recent progress in nanophotonic devices for compact optical interconnect networks. We focus on microdisk-laser-based transmitters and discuss improved design and advanced functionality including all-optical wavelength conversion and flip-flops. Next we discuss the fabrication uniformity...... of the passive routing circuits and their thermal tuning. Finally, we discuss the performance of a wavelength selective detector....

  2. Regulatory Issues Surrounding Merchant Interconnection

    International Nuclear Information System (INIS)

    Kuijlaars, Kees-Jan; Zwart, Gijsbert

    2003-11-01

    We discussed various issues concerning the regulatory perspective on private investment in interconnectors. One might claim that leaving investment in transmission infrastructure to competing market parties is more efficient than relying on regulated investment only (especially in the case of long (DC) lines connecting previously unconnected parts of the grids, so that externalities from e.g. loop flows do not play a significant role). We considered that some aspects of interconnection might reduce these market benefits. In particular, the large fixed costs of interconnection construction may lead to significant under investment (due to both first mover monopoly power and the fact that part of generation cost efficiencies realised by interconnection are not captured by the investor itself, and remain external to the investment decision). Second, merchant ownership restricts future opportunities for adaptation of regulation, as would be required e.g. for introduction of potentially more sophisticated methods of congestion management or market splitting. Some of the disadvantages of merchant investment may be mitigated however by a suitable regulatory framework, and we discussed some views in this direction. The issues we discussed are not intended to give a complete framework, and detailed regulation will certainly involve many more specific requirements. Areas we did not touch upon include e.g. the treatment of deep connection costs, rules for operation and maintenance of the line, and impact on availability of capacity on other interconnections

  3. Regulatory Issues Surrounding Merchant Interconnection

    Energy Technology Data Exchange (ETDEWEB)

    Kuijlaars, Kees-Jan; Zwart, Gijsbert [Office for Energy Regulation (DTe), The Hague (Netherlands)

    2003-11-01

    We discussed various issues concerning the regulatory perspective on private investment in interconnectors. One might claim that leaving investment in transmission infrastructure to competing market parties is more efficient than relying on regulated investment only (especially in the case of long (DC) lines connecting previously unconnected parts of the grids, so that externalities from e.g. loop flows do not play a significant role). We considered that some aspects of interconnection might reduce these market benefits. In particular, the large fixed costs of interconnection construction may lead to significant under investment (due to both first mover monopoly power and the fact that part of generation cost efficiencies realised by interconnection are not captured by the investor itself, and remain external to the investment decision). Second, merchant ownership restricts future opportunities for adaptation of regulation, as would be required e.g. for introduction of potentially more sophisticated methods of congestion management or market splitting. Some of the disadvantages of merchant investment may be mitigated however by a suitable regulatory framework, and we discussed some views in this direction. The issues we discussed are not intended to give a complete framework, and detailed regulation will certainly involve many more specific requirements. Areas we did not touch upon include e.g. the treatment of deep connection costs, rules for operation and maintenance of the line, and impact on availability of capacity on other interconnections.

  4. Local Network Wideband Interconnection Alternatives.

    Science.gov (United States)

    1984-01-01

    signal. 3.2.2 Limitations Although satellites offer the advantages of insensitivity to distance, point-to-multipoint communication capability and...Russell, the CATV franchisee for the town of Bedford, has not yit set rates for leasing channels on their network. If this network were interconnected

  5. Interconnection blocks: a method for providing reusable, rapid, multiple, aligned and planar microfluidic interconnections

    DEFF Research Database (Denmark)

    Sabourin, David; Snakenborg, Detlef; Dufva, Hans Martin

    2009-01-01

    In this paper a method is presented for creating 'interconnection blocks' that are re-usable and provide multiple, aligned and planar microfluidic interconnections. Interconnection blocks made from polydimethylsiloxane allow rapid testing of microfluidic chips and unobstructed microfluidic observ...

  6. Message Passing Framework for Globally Interconnected Clusters

    International Nuclear Information System (INIS)

    Hafeez, M; Riaz, N; Asghar, S; Malik, U A; Rehman, A

    2011-01-01

    In prevailing technology trends it is apparent that the network requirements and technologies will advance in future. Therefore the need of High Performance Computing (HPC) based implementation for interconnecting clusters is comprehensible for scalability of clusters. Grid computing provides global infrastructure of interconnecting clusters consisting of dispersed computing resources over Internet. On the other hand the leading model for HPC programming is Message Passing Interface (MPI). As compared to Grid computing, MPI is better suited for solving most of the complex computational problems. MPI itself is restricted to a single cluster. It does not support message passing over the internet to use the computing resources of different clusters in an optimal way. We propose a model that provides message passing capabilities between parallel applications over the internet. The proposed model is based on Architecture for Java Universal Message Passing (A-JUMP) framework and Enterprise Service Bus (ESB) named as High Performance Computing Bus. The HPC Bus is built using ActiveMQ. HPC Bus is responsible for communication and message passing in an asynchronous manner. Asynchronous mode of communication offers an assurance for message delivery as well as a fault tolerance mechanism for message passing. The idea presented in this paper effectively utilizes wide-area intercluster networks. It also provides scheduling, dynamic resource discovery and allocation, and sub-clustering of resources for different jobs. Performance analysis and comparison study of the proposed framework with P2P-MPI are also presented in this paper.

  7. Parallel interconnect for a novel system approach to short distance high information transfer data links

    Science.gov (United States)

    Raskin, Glenn; Lebby, Michael S.; Carney, F.; Kazakia, M.; Schwartz, Daniel B.; Gaw, Craig A.

    1997-04-01

    The OPTOBUSTM family of products provides for high performance parallel interconnection utilizing optical links in a 10-bit wide bi-directional configuration. The link is architected to be 'transparent' in that it is totally asynchronous and dc coupled so that it can be treated as a perfect cable with extremely low skew and no losses. An optical link consists of two identical transceiver modules and a pair of connectorized 62.5 micrometer multi mode fiber ribbon cables. The OPTOBUSTM I link provides bi- directional functionality at 4 Gbps (400 Mbps per channel), while the OPTOBUSTM II link will offer the same capability at 8 Gbps (800 Mbps per channel). The transparent structure of the OPTOBUSTM links allow for an arbitrary data stream regardless of its structure. Both the OPTOBUSTM I and OPTOBUSTM II transceiver modules are packaged as partially populated 14 by 14 pin grid arrays (PGA) with optical receptacles on one side of the module. The modules themselves are composed of several elements; including passives, integrated circuits optoelectronic devices and optical interface units (OIUs) (which consist of polymer waveguides and a specially designed lead frame). The initial offering of the modules electrical interface utilizes differential CML. The CML line driver sinks 5 mA of current into one of two pins. When terminated with 50 ohm pull-up resistors tied to a voltage between VCC and VCC-2, the result is a differential swing of plus or minus 250 mV, capable of driving standard PECL I/Os. Future offerings of the OPTOBUSTM links will incorporate LVDS and PECL interfaces as well as CML. The integrated circuits are silicon based. For OPTOBUSTM I links, a 1.5 micrometer drawn emitter NPN bipolar process is used for the receiver and an enhanced 0.8 micrometer CMOS process for the laser driver. For OPTOBUSTM II links, a 0.8 micrometer drawn emitter NPN bipolar process is used for the receiver and the driver IC utilizes 0.8 micrometer BiCMOS technology. The OPTOBUSTM

  8. Interconnection blocks: a method for providing reusable, rapid, multiple, aligned and planar microfluidic interconnections

    International Nuclear Information System (INIS)

    Sabourin, D; Snakenborg, D; Dufva, M

    2009-01-01

    In this paper a method is presented for creating 'interconnection blocks' that are re-usable and provide multiple, aligned and planar microfluidic interconnections. Interconnection blocks made from polydimethylsiloxane allow rapid testing of microfluidic chips and unobstructed microfluidic observation. The interconnection block method is scalable, flexible and supports high interconnection density. The average pressure limit of the interconnection block was near 5.5 bar and all individual results were well above the 2 bar threshold considered applicable to most microfluidic applications

  9. Optical transceiver ICs based on 3D die-stacking of opto-electronic devices

    NARCIS (Netherlands)

    Duan, P.; Raz, O.; Smalbrugge, B.E.; Plassche, van de K.L.; Dorren, H.J.S.

    2013-01-01

    Wafer scale fabrication of the 3D stacked transceivers is discussed. Uniform open eye patterns at 10 Gb/s/channel of both 3D stacked transmitter and receiver ICs indicates that the interconnection technology is robust.

  10. Integrated Automatic Test System for Airborne Optoelectronic Pods

    International Nuclear Information System (INIS)

    Zhang, Z M; Ding, M J; Wang, L

    2006-01-01

    Based on the introduction of the construction and basic principle of the airborne optoelectronic pod, in accordance with the performance standards of the pod, the total solution scheme of the automatic test system used for testing the combination property is proposed in this paper. The main structure, hardware and software design of the system based on the virtual instruments technology are also discussed in detail. The result of the true run proves the practicality, efficiency, high accuracy and other characteristics of the computer aided testing system based on virtual instruments

  11. Graphene and Two-Dimensional Materials for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Andreas Bablich

    2016-03-01

    Full Text Available This article reviews optoelectronic devices based on graphene and related two-dimensional (2D materials. The review includes basic considerations of process technology, including demonstrations of 2D heterostructure growth, and comments on the scalability and manufacturability of the growth methods. We then assess the potential of graphene-based transparent conducting electrodes. A major part of the review describes photodetectors based on lateral graphene p-n junctions and Schottky diodes. Finally, the progress in vertical devices made from 2D/3D heterojunctions, as well as all-2D heterostructures is discussed.

  12. Measuring processes with opto-electronic semiconductor components

    International Nuclear Information System (INIS)

    1985-01-01

    This is a report on the state of commercially available semiconductor emitters and detectors for the visible, near, middle and remote infrared range. A survey is given on the distance, speed, flow and length measuring techniques using opto-electronic components. Automatic focussing, the use of light barriers, non-contact temperature measurements, spectroscopic gas, liquid and environmental measurement techniques and gas analysis in medical techniques show further applications of the new components. The modern concept of guided radiation in optical fibres and their use in system technology is briefly explained. (DG) [de

  13. 47 CFR 90.477 - Interconnected systems.

    Science.gov (United States)

    2010-10-01

    ... part and medical emergency systems in the 450-470 MHz band, interconnection will be permitted only... operating on frequencies in the bands below 800 MHz are not subject to the interconnection provisions of...

  14. Time analysis of interconnection network implemented on the honeycomb architecture

    Energy Technology Data Exchange (ETDEWEB)

    Milutinovic, D [Inst. Michael Pupin, Belgrade (Yugoslavia)

    1996-12-31

    Problems of time domains analysis of the mapping of interconnection networks for parallel processing on one form of uniform massively parallel architecture of the cellular type are considered. The results of time analysis are discussed. It is found that changing the technology results in changing the mapping rules. 17 refs.

  15. Knowledge Access in Rural Inter-connected Areas Network ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Knowledge Access in Rural Inter-connected Areas Network (KariaNet) - Phase II ... and indigenous knowledge using information and communication technologies (ICTs) ... for research proposals on the aforementioned topics, action-research projects, ... Evaluating knowledge-sharing methods to improve land utilization and ...

  16. Fusion-bonded fluidic interconnects

    International Nuclear Information System (INIS)

    Fazal, I; Elwenspoek, M C

    2008-01-01

    A new approach to realize fluidic interconnects based on the fusion bonding of glass tubes with silicon is presented. Fusion bond strength analyses have been carried out. Experiments with plain silicon wafers and coated with silicon oxide and silicon nitride are performed. The obtained results are discussed in terms of the homogeneity and strength of fusion bond. High pressure testing shows that the bond strength is large enough for most applications of fluidic interconnects. The bond strength for 525 µm thick silicon, with glass tubes having an outer diameter of 6 mm and with a wall thickness of 2 mm, is more than 60 bars after annealing at a temperature of 800 °C

  17. System interconnection studies using WASP

    Energy Technology Data Exchange (ETDEWEB)

    Bayrak, Y [Turkish Electricity Generation and Transmission Corp., Ankara (Turkey)

    1997-09-01

    The aim of this paper is to describe the application of WASP as a modelling tool for determining the development of two electric systems with interconnections. A case study has been carried out to determine the possibilities of transfer of baseload energy between Turkey and a neighboring country. The objective of this case study is to determine the amount of energy that can be transferred, variations of Loss Probability (LOLP) and unserved energy, and the cost of additional generation with interconnection. The break-even cost will be determined to obtain the minimum charge rate at which TEAS (Turkish Electricity Generation-Transmission Corp.) needs to sell the energy in order to recover the costs. The minimum charge rate for both capacity and energy will be estimated without considering extra capacity additions, except for the ones needed by the Turkish system alone. (author). 2 figs, 3 tabs.

  18. Driving Interconnected Networks to Supercriticality

    Directory of Open Access Journals (Sweden)

    Filippo Radicchi

    2014-04-01

    Full Text Available Networks in the real world do not exist as isolated entities, but they are often part of more complicated structures composed of many interconnected network layers. Recent studies have shown that such mutual dependence makes real networked systems potentially exposed to atypical structural and dynamical behaviors, and thus there is an urgent necessity to better understand the mechanisms at the basis of these anomalies. Previous research has mainly focused on the emergence of atypical properties in relation to the moments of the intra- and interlayer degree distributions. In this paper, we show that an additional ingredient plays a fundamental role for the possible scenario that an interconnected network can face: the correlation between intra- and interlayer degrees. For sufficiently high amounts of correlation, an interconnected network can be tuned, by varying the moments of the intra- and interlayer degree distributions, in distinct topological and dynamical regimes. When instead the correlation between intra- and interlayer degrees is lower than a critical value, the system enters in a supercritical regime where dynamical and topological phases are no longer distinguishable.

  19. 18 CFR 292.306 - Interconnection costs.

    Science.gov (United States)

    2010-04-01

    ... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Interconnection costs... § 292.306 Interconnection costs. (a) Obligation to pay. Each qualifying facility shall be obligated to pay any interconnection costs which the State regulatory authority (with respect to any electric...

  20. Towards energy aware optical networks and interconnects

    Science.gov (United States)

    Glesk, Ivan; Osadola, Tolulope; Idris, Siti

    2013-10-01

    In a today's world, information technology has been identified as one of the major factors driving economic prosperity. Datacenters businesses have been growing significantly in the past few years. The equipments in these datacenters need to be efficiently connected to each other and also to the outside world in order to enable effective exchange of information. This is why there is need for highly scalable, energy savvy and reliable network connectivity infrastructure that is capable of accommodating the large volume of data being exchanged at any time within the datacenter network and the outside network in general. These devices that can ensure such effective connectivity currently require large amount of energy in order to meet up with these increasing demands. In this paper, an overview of works being done towards realizing energy aware optical networks and interconnects for datacenters is presented. Also an OCDMA approach is discussed as potential multiple access technique for future optical network interconnections. We also presented some challenges that might inhibit effective implementation of the OCDMA multiplexing scheme.

  1. Proceedings of the thirty fifth international conference on contemporary trends in optics and optoelectronics: conference digest - extended abstracts

    International Nuclear Information System (INIS)

    2011-01-01

    Optics and optoelectronics are indispensable in all spheres of human activity, ranging from day to day needs to advanced scientific and technological pursuits and their applications for the benefit of the society. This conference covers the following topics: adaptive optics, biomedical optics and imaging, classical and quantum optics, fibre optics, optics for space applications, optical metrology and NDT, optical information processing, optical and optoelectronic materials. Papers relevant to INIS are indexed separately

  2. Optoelectronics instrumentation of a spectrophotometer

    International Nuclear Information System (INIS)

    Lopez, A.; Camas, J.; Rios, C.; Lopez, F.; Anzueto, G.; Castannon, J.; Dominguez, J.

    2016-01-01

    Today, it is necessary to characterize materials to generate knowledge and propose new technology in the development of optical sensors. However, the acquisition of spectrophotometers is not easy for the researchers that not have an economic resource. So, in this paper the design of a spectrophotometer is presented using optical technology such as light source, light and electron scattering commercially available in Mexico, and whose construction is cheap and easy to build. (Author)

  3. In-memory interconnect protocol configuration registers

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Kevin Y.; Roberts, David A.

    2017-09-19

    Systems, apparatuses, and methods for moving the interconnect protocol configuration registers into the main memory space of a node. The region of memory used for storing the interconnect protocol configuration registers may also be made cacheable to reduce the latency of accesses to the interconnect protocol configuration registers. Interconnect protocol configuration registers which are used during a startup routine may be prefetched into the host's cache to make the startup routine more efficient. The interconnect protocol configuration registers for various interconnect protocols may include one or more of device capability tables, memory-side statistics (e.g., to support two-level memory data mapping decisions), advanced memory and interconnect features such as repair resources and routing tables, prefetching hints, error correcting code (ECC) bits, lists of device capabilities, set and store base address, capability, device ID, status, configuration, capabilities, and other settings.

  4. In-memory interconnect protocol configuration registers

    Science.gov (United States)

    Cheng, Kevin Y.; Roberts, David A.

    2017-09-19

    Systems, apparatuses, and methods for moving the interconnect protocol configuration registers into the main memory space of a node. The region of memory used for storing the interconnect protocol configuration registers may also be made cacheable to reduce the latency of accesses to the interconnect protocol configuration registers. Interconnect protocol configuration registers which are used during a startup routine may be prefetched into the host's cache to make the startup routine more efficient. The interconnect protocol configuration registers for various interconnect protocols may include one or more of device capability tables, memory-side statistics (e.g., to support two-level memory data mapping decisions), advanced memory and interconnect features such as repair resources and routing tables, prefetching hints, error correcting code (ECC) bits, lists of device capabilities, set and store base address, capability, device ID, status, configuration, capabilities, and other settings.

  5. Laser applications in the electronics and optoelectronics industry in Japan

    Science.gov (United States)

    Washio, Kunihiko

    1999-07-01

    This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

  6. Virtual interconnection platform initiative scoping study

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kou, Gefei [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Pan, Zuohong [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Liu, Yilu [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); King Jr., Thomas J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-01-01

    Due to security and liability concerns, the research community has limited access to realistic large-scale power grid models to test and validate new operation and control methodologies. It is also difficult for industry to evaluate the relative value of competing new tools without a common platform for comparison. This report proposes to develop a large-scale virtual power grid model that retains basic features and represents future trends of major U.S. electric interconnections. This model will include realistic power flow and dynamics information as well as a relevant geospatial distribution of assets. This model will be made widely available to the research community for various power system stability and control studies and can be used as a common platform for comparing the efficacies of various new technologies.

  7. Optoelectronic line transmission an introduction to fibre optics

    CERN Document Server

    Tricker, Raymond L

    2013-01-01

    Optoelectronic Line Transmission: An Introduction to Fibre Optics presents a basic introduction as well as a background reference manual on fiber optic transmission. The book discusses the basic principles of optical line transmission; the advantages and disadvantages of optical fibers and optoelectronic signalling; the practical applications of optoelectronics; and the future of optoelectronics. The text also describes the theories of optical line transmission; fibers and cables for optical transmission; transmitters including light-emitting diodes and lasers; and receivers including photodi

  8. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

  9. Optoelectronics in TESLA, LHC and pi-of-the-sky experiments

    CERN Document Server

    Romaniuk, Ryszard; Simrock, Stefan; Wrochna, Grzegorz

    2004-01-01

    Optical and optoelectronics technologies are more and more widely used in the biggest world experiments of high energy and nuclear physics, as well as in the astronomy. The paper is a kind of a broad digest describing the usage of optoelectronics is such experiments and information about some of the involved teams. The described experiments include: TESLA linear accelerator and FEL, Compact Muon Solenoid at LHC and recently started pi-of-the-sky global gamma ray bursts (with associated optical flashes) observation experiment. Optoelectronics and photonics offer several key features which are either extending the technical parameters of existing solutions or adding quite new practical application possibilities. Some of these favorable features of photonic systems are: high selectivity of optical sensors, immunity to some kinds of noise processes, extremely broad bandwidth exchangeable for either terabit rate transmission or ultrashort pulse generation, parallel image processing capability, etc. The following g...

  10. Epidemic spreading on interconnected networks.

    Science.gov (United States)

    Saumell-Mendiola, Anna; Serrano, M Ángeles; Boguñá, Marián

    2012-08-01

    Many real networks are not isolated from each other but form networks of networks, often interrelated in nontrivial ways. Here, we analyze an epidemic spreading process taking place on top of two interconnected complex networks. We develop a heterogeneous mean-field approach that allows us to calculate the conditions for the emergence of an endemic state. Interestingly, a global endemic state may arise in the coupled system even though the epidemics is not able to propagate on each network separately and even when the number of coupling connections is small. Our analytic results are successfully confronted against large-scale numerical simulations.

  11. GaAs optoelectronic neuron arrays

    Science.gov (United States)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  12. Monocrystalline halide perovskite nanostructures for optoelectronic applications

    NARCIS (Netherlands)

    Khoram, P.

    2018-01-01

    Halide perovskites are a promising class of materials for incorporation in optoelectronics with higher efficiency and lower cost. The solution processability of these materials provides unique opportunities for simple nanostructure fabrication. In the first half of the thesis (chapter 2 and 3) we

  13. Optical interconnection networks for high-performance computing systems

    International Nuclear Information System (INIS)

    Biberman, Aleksandr; Bergman, Keren

    2012-01-01

    Enabled by silicon photonic technology, optical interconnection networks have the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. Chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, offer unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of our work, we demonstrate such feasibility of waveguides, modulators, switches and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. We propose novel silicon photonic devices, subsystems, network topologies and architectures to enable unprecedented performance of these photonic interconnection networks. Furthermore, the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers. (review article)

  14. Ultra-Stretchable Interconnects for High-Density Stretchable Electronics

    Directory of Open Access Journals (Sweden)

    Salman Shafqat

    2017-09-01

    Full Text Available The exciting field of stretchable electronics (SE promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS-type process recipes using bulk integrated circuit (IC microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.

  15. Report on technological survey in fiscal 1999. Demonstration test for smoothing grid interconnection (Demonstration test using simulation); 1999 nendo keito renkei enkatsuka jissho shiken chosa hokokusho. Simulation ni yoru jissho shiken

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Examinations have been made by using simulation on a device having single operation detecting function, that is the single operation detector. The discussions are given on (1) an induction generator and a reactive power compensation type detector system interconnected to a high-voltage grid, and (2) a three-phase inverter, a reactive power variation type detector, and a QC mode frequency shifting detector system. In Item (1), it was learned that, because of variation induction force being small in the case of operation having become single operation, the variation signal must be made greater, and in Item (2), the discussions have not gone as far as a conclusion can be drawn. In addition, assuming a synchronous motor interconnected to a high voltage grid, discussions were given on the effects of disturbance to the interconnected system on the functions of the single operation detector, whereas it was verified that there are no problems in practical use. Furthermore, discussions were given on the self excitation phenomenon in an induction generator, and requirements for omitting the ground fault overvoltage relay in a discrete type power supply. (NEDO)

  16. Interconnect fatigue design for terrestrial photovoltaic modules

    Science.gov (United States)

    Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

    1982-03-01

    The results of comprehensive investigation of interconnect fatigue that has led to the definition of useful reliability-design and life-prediction algorithms are presented. Experimental data indicate that the classical strain-cycle (fatigue) curve for the interconnect material is a good model of mean interconnect fatigue performance, but it fails to account for the broad statistical scatter, which is critical to reliability prediction. To fill this shortcoming the classical fatigue curve is combined with experimental cumulative interconnect failure rate data to yield statistical fatigue curves (having failure probability as a parameter) which enable (1) the prediction of cumulative interconnect failures during the design life of an array field, and (2) the unambiguous--ie., quantitative--interpretation of data from field-service qualification (accelerated thermal cycling) tests. Optimal interconnect cost-reliability design algorithms are derived based on minimizing the cost of energy over the design life of the array field.

  17. Multi-net optimization of VLSI interconnect

    CERN Document Server

    Moiseev, Konstantin; Wimer, Shmuel

    2015-01-01

    This book covers layout design and layout migration methodologies for optimizing multi-net wire structures in advanced VLSI interconnects. Scaling-dependent models for interconnect power, interconnect delay and crosstalk noise are covered in depth, and several design optimization problems are addressed, such as minimization of interconnect power under delay constraints, or design for minimal delay in wire bundles within a given routing area. A handy reference or a guide for design methodologies and layout automation techniques, this book provides a foundation for physical design challenges of interconnect in advanced integrated circuits.  • Describes the evolution of interconnect scaling and provides new techniques for layout migration and optimization, focusing on multi-net optimization; • Presents research results that provide a level of design optimization which does not exist in commercially-available design automation software tools; • Includes mathematical properties and conditions for optimal...

  18. SDN Data Center Performance Evaluation of Torus and Hypercube Interconnecting Schemes

    DEFF Research Database (Denmark)

    Andrus, Bogdan-Mihai; Vegas Olmos, Juan José; Mehmeri, Victor

    2015-01-01

    — By measuring throughput, delay, loss-rate and jitter, we present how SDN framework yields a 45% performance increase in highly interconnected topologies like torus and hypercube compared to current Layer2 switching technologies, applied to data center architectures......— By measuring throughput, delay, loss-rate and jitter, we present how SDN framework yields a 45% performance increase in highly interconnected topologies like torus and hypercube compared to current Layer2 switching technologies, applied to data center architectures...

  19. Interconnect rise time in superconducting integrating circuits

    International Nuclear Information System (INIS)

    Preis, D.; Shlager, K.

    1988-01-01

    The influence of resistive losses on the voltage rise time of an integrated-circuit interconnection is reported. A distribution-circuit model is used to present the interconnect. Numerous parametric curves are presented based on numerical evaluation of the exact analytical expression for the model's transient response. For the superconducting case in which the series resistance of the interconnect approaches zero, the step-response rise time is longer but signal strength increases significantly

  20. Terahertz optoelectronics with surface plasmon polariton diode.

    Science.gov (United States)

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  1. Parallel optoelectronic trinary signed-digit division

    Science.gov (United States)

    Alam, Mohammad S.

    1999-03-01

    The trinary signed-digit (TSD) number system has been found to be very useful for parallel addition and subtraction of any arbitrary length operands in constant time. Using the TSD addition and multiplication modules as the basic building blocks, we develop an efficient algorithm for performing parallel TSD division in constant time. The proposed division technique uses one TSD subtraction and two TSD multiplication steps. An optoelectronic correlator based architecture is suggested for implementation of the proposed TSD division algorithm, which fully exploits the parallelism and high processing speed of optics. An efficient spatial encoding scheme is used to ensure better utilization of space bandwidth product of the spatial light modulators used in the optoelectronic implementation.

  2. Optoelectronic Devices Advanced Simulation and Analysis

    CERN Document Server

    Piprek, Joachim

    2005-01-01

    Optoelectronic devices transform electrical signals into optical signals and vice versa by utilizing the sophisticated interaction of electrons and light within micro- and nano-scale semiconductor structures. Advanced software tools for design and analysis of such devices have been developed in recent years. However, the large variety of materials, devices, physical mechanisms, and modeling approaches often makes it difficult to select appropriate theoretical models or software packages. This book presents a review of devices and advanced simulation approaches written by leading researchers and software developers. It is intended for scientists and device engineers in optoelectronics, who are interested in using advanced software tools. Each chapter includes the theoretical background as well as practical simulation results that help to better understand internal device physics. The software packages used in the book are available to the public, on a commercial or noncommercial basis, so that the interested r...

  3. Fluidic interconnections for microfluidic systems: A new integrated fluidic interconnection allowing plug 'n' play functionality

    DEFF Research Database (Denmark)

    Perozziello, Gerardo; Bundgaard, Frederik; Geschke, Oliver

    2008-01-01

    A crucial challenge in packaging of microsystems is microfluidic interconnections. These have to seal the ports of the system, and have to provide the appropriate interface to other devices or the external environment. Integrated fluidic interconnections appear to be a good solution for interconn...... external metal ferrules and the system. Theoretical calculations are made to dimension and model the integrated fluidic interconnection. Leakage tests are performed on the interconnections, in order to experimentally confirm the model, and detect its limits....

  4. FDTD technique based crosstalk analysis of bundled SWCNT interconnects

    International Nuclear Information System (INIS)

    Duksh, Yograj Singh; Kaushik, Brajesh Kumar; Agarwal, Rajendra P.

    2015-01-01

    The equivalent electrical circuit model of a bundled single-walled carbon nanotube based distributed RLC interconnects is employed for the crosstalk analysis. The accurate time domain analysis and crosstalk effect in the VLSI interconnect has emerged as an essential design criteria. This paper presents a brief description of the numerical method based finite difference time domain (FDTD) technique that is intended for estimation of voltages and currents on coupled transmission lines. For the FDTD implementation, the stability of the proposed model is strictly restricted by the Courant condition. This method is used for the estimation of crosstalk induced propagation delay and peak voltage in lossy RLC interconnects. Both functional and dynamic crosstalk effects are analyzed in the coupled transmission line. The effect of line resistance on crosstalk induced delay, and peak voltage under dynamic and functional crosstalk is also evaluated. The FDTD analysis and the SPICE simulations are carried out at 32 nm technology node for the global interconnects. It is observed that the analytical results obtained using the FDTD technique are in good agreement with the SPICE simulation results. The crosstalk induced delay, propagation delay, and peak voltage obtained using the FDTD technique shows average errors of 4.9%, 3.4% and 0.46%, respectively, in comparison to SPICE. (paper)

  5. New Development of Membrane Base Optoelectronic Devices

    Directory of Open Access Journals (Sweden)

    Leon Hamui

    2017-12-01

    Full Text Available It is known that one factor that affects the operation of optoelectronic devices is the effective protection of the semiconductor materials against environmental conditions. The permeation of atmospheric oxygen and water molecules into the device structure induces degradation of the electrodes and the semiconductor. As a result, in this communication we report the fabrication of semiconductor membranes consisting of Magnesium Phthalocyanine-allene (MgPc-allene particles dispersed in Nylon 11 films. These membranes combine polymer properties with organic semiconductors properties and also provide a barrier effect for the atmospheric gas molecules. They were prepared by high vacuum evaporation and followed by thermal relaxation technique. For the characterization of the obtained membranes, Fourier-transform infrared spectroscopy (FT-IR, scanning electron microscopy (SEM, and energy dispersive spectroscopy (EDS were used to determine the chemical and microstructural properties. UV-ViS, null ellipsometry, and visible photoluminescence (PL at room temperature were used to characterize the optoelectronic properties. These results were compared with those obtained for the organic semiconductors: MgPc-allene thin films. Additionally, semiconductor membranes devices have been prepared, and a study of the device electronic transport properties was conducted by measuring electrical current density-voltage (J-V characteristics by four point probes with different wavelengths. The resistance properties against different environmental molecules are enhanced, maintaining their semiconductor functionality that makes them candidates for optoelectronic applications.

  6. Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

    Directory of Open Access Journals (Sweden)

    Bing Huang

    2014-05-01

    Full Text Available Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double-sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

  7. Interconnection blocks with minimal dead volumes permitting planar interconnection to thin microfluidic devices

    DEFF Research Database (Denmark)

    Sabourin, David; Snakenborg, Detlef; Dufva, Martin

    2010-01-01

    We have previously described 'Interconnection Blocks' which are re-usable, non-integrated PDMS blocks which allowing multiple, aligned and planar microfluidic interconnections. Here, we describe Interconnection Block versions with zero dead volumes that allow fluidic interfacing to flat or thin s...

  8. Authentication in Virtual Organizations: A Reputation Based PKI Interconnection Model

    Science.gov (United States)

    Wazan, Ahmad Samer; Laborde, Romain; Barrere, Francois; Benzekri, Abdelmalek

    Authentication mechanism constitutes a central part of the virtual organization work. The PKI technology is used to provide the authentication in each organization involved in the virtual organization. Different trust models are proposed to interconnect the different PKIs in order to propagate the trust between them. While the existing trust models contain many drawbacks, we propose a new trust model based on the reputation of PKIs.

  9. Silicon opto-electronic wavelength tracker based on an asymmetric 2x3 Mach-Zehnder Interferometer

    OpenAIRE

    Doménech Gómez, José David; Sanchez Fandiño, Javier Antonio; Gargallo Jaquotot, Bernardo Andrés; Baños Lopez, Rocio; Muñoz Muñoz, Pascual

    2014-01-01

    In this paper we report on the experimental demonstration of a Silicon-on-Insulator opto-electronic wavelength tracker for the optical telecommunication C-band. The device consist of a 2x3 Mach-Zehnder Interferometer (MZI) with 10 pm resolution and photo-detectors integrated on the same chip. The MZI is built interconnecting two Multimode Interference (MMI) couplers with two waveguides whose length difference is 56 mm. The first MMI has a coupling ratio of 95:05 to com...

  10. Epidemics in interconnected small-world networks

    NARCIS (Netherlands)

    Liu, M.; Li, D.; Qin, P.; Liu, C.; Wang, H.; Wang, F.

    2015-01-01

    Networks can be used to describe the interconnections among individuals, which play an important role in the spread of disease. Although the small-world effect has been found to have a significant impact on epidemics in single networks, the small-world effect on epidemics in interconnected networks

  11. Colligation, Or the Logical Inference of Interconnection

    DEFF Research Database (Denmark)

    Falster, Peter

    1998-01-01

    laws or assumptions. Yet interconnection as an abstract concept seems to be without scientific underpinning in pure logic. Adopting a historical viewpoint, our aim is to show that the reasoning of interconnection may be identified with a neglected kind of logical inference, called "colligation...

  12. Colligation or, The Logical Inference of Interconnection

    DEFF Research Database (Denmark)

    Franksen, Ole Immanuel; Falster, Peter

    2000-01-01

    laws or assumptions. Yet interconnection as an abstract concept seems to be without scientific underpinning in oure logic. Adopting a historical viewpoint, our aim is to show that the reasoning of interconnection may be identified with a neglected kind of logical inference, called "colligation...

  13. Design and Radiation Assessment of Optoelectronic Transceiver Circuits for ITER

    CERN Document Server

    Leroux, P; Van Uffelen, M; Steyaert, M

    2008-01-01

    The presented work describes the design and characterization results of different electronic building blocks for a MGy gamma radiation tolerant optoelectronic transceiver aiming at ITER applications. The circuits are implemented using the 70GHz fT SiGe HBT in a 0.35μm BiCMOS technology. A VCSEL driver circuit has been designed and measured up to a TID of 1.6 MGy and up to a bit rate of 622Mbps. No significant degradation is seen in the eye opening of the output signal. On the receiver side, both a 1GHz, 3kΩ transimpedance and a 5GHz Cherry-Hooper amplifier with over 20dB voltage gain have been designed.

  14. Optoelectronic analogue signal transfer for LHC detectors, 1991

    CERN Document Server

    Dowell, John D; Homer, R J; Jovanovic, P; Kenyon, I; Staley, R; Webster, K; Da Via, C; Feyt, J; Nappey, P; Stefanini, G; Dwir, B; Reinhart, F K; Davies, J; Green, N; Stewart, W; Young, T; Hall, G; Akesson, T; Jarlskog, G; Kröll, S; Nickerson, R; Jaroslawski, S; CERN. Geneva. Detector Research and Development Committee

    1991-01-01

    We propose to study and develop opto-electronic analogue front-ends based on electro-optic intensity modulators. These devices translate the detector electrical analogue signals into optical signals which are then transferred via optical fibres to photodetector receivers at the remote readout. In comparison with conventional solutions based on copper cables, this technique offers the advantages of high speed, very low power dissipation and transmission losses, compactness and immunity to electromagnetic interference. The linearity and dynamic range that can be obtained are more than adequate for central tracking detectors, and the proposed devices have considerable radiation- hardness capabilities. The large bandwidth and short transit times offer possibilities for improved triggering schemes. The proposed R&D programme is aimed at producing multi-channel "demonstrator" units for evaluation both in laboratory and beam tests. This will allow the choice of the most effective technology. A detailed study wil...

  15. Printed polymer photonic devices for optical interconnect systems

    Science.gov (United States)

    Subbaraman, Harish; Pan, Zeyu; Zhang, Cheng; Li, Qiaochu; Guo, L. J.; Chen, Ray T.

    2016-03-01

    Polymer photonic device fabrication usually relies on the utilization of clean-room processes, including photolithography, e-beam lithography, reactive ion etching (RIE) and lift-off methods etc, which are expensive and are limited to areas as large as a wafer. Utilizing a novel and a scalable printing process involving ink-jet printing and imprinting, we have fabricated polymer based photonic interconnect components, such as electro-optic polymer based modulators and ring resonator switches, and thermo-optic polymer switch based delay networks and demonstrated their operation. Specifically, a modulator operating at 15MHz and a 2-bit delay network providing up to 35.4ps are presented. In this paper, we also discuss the manufacturing challenges that need to be overcome in order to make roll-to-roll manufacturing practically viable. We discuss a few manufacturing challenges, such as inspection and quality control, registration, and web control, that need to be overcome in order to realize true implementation of roll-to-roll manufacturing of flexible polymer photonic systems. We have overcome these challenges, and currently utilizing our inhouse developed hardware and software tools, <10μm alignment accuracy at a 5m/min is demonstrated. Such a scalable roll-to-roll manufacturing scheme will enable the development of unique optoelectronic devices which can be used in a myriad of different applications, including communication, sensing, medicine, security, imaging, energy, lighting etc.

  16. Nanoantenna couplers for metal-insulator-metal waveguide interconnects

    Science.gov (United States)

    Onbasli, M. Cengiz; Okyay, Ali K.

    2010-08-01

    State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times.

  17. Assessment of on-farm anaerobic digester grid interconnections

    International Nuclear Information System (INIS)

    Ruhnke, W.

    2006-01-01

    While several anaerobic digestion (AD) pilot plants have recently been built in Canada, early reports suggest that interconnection barriers are delaying their widescale implementation. This paper examined grid interconnection experiences from the perspectives of farmers, local distributing companies (LDCs) and other stakeholders. The aim of the paper was to identify challenges to the implementation of AD systems. Case studies included an Ontario Dairy Herd AD system generating 50 kW; a Saskatchewan hog farm AD system generating 120 kW and an Alberta outdoor beef feedlot AD system generating 1000 kW. Two survey forms were created for project operators, and LDCs. The following 3 category barriers were identified: (1) technical concerns over islanding conditions, power quality requirements, power flow studies and other engineering analyses; (2) business practices barriers such as a lack of response after initial utility contact; and (3) regulatory barriers including the unavailability of fair buy-back rates, the lack of net metering programs, restrictive net metering programs, and pricing issues. It was suggested that collaborative efforts among all stakeholders are needed to resolve barriers quickly. Recommendations included the adoption of uniform technical standards for connecting generators to the grid, as well as adopting standard commercial practices for any required LDC interconnection review. It was also suggested that standard business terms for interconnection agreements should be established. Regulatory principles should be compatible with distributed power choices in regulated and unregulated markets. It was concluded that resolving interconnection barriers is a critical step towards realizing market opportunities available for AD technologies. refs., tabs., figs

  18. EUROPEAN ENERGY INTERCONNECTION EFFECTS ON THE ROMANIAN ECONOMY

    Directory of Open Access Journals (Sweden)

    Ionescu Mihaela

    2014-07-01

    Full Text Available In this paper the author wants to exemplify the extent to which economic growth in Romania is influenced by the current power system infrastructure investments in Europe. Electricity transmission infrastructure in Romania is at a turning point. The high level of security of supply, delivery efficiency in a competitive internal market are dependent on significant investment, both within the country and across borders. Since the economic crisis makes investment financing is increasingly difficult, it is necessary that they be targeted as well. The European Union has initiated the “Connecting Europe” through which investments are allocated to European energy network interconnection of energy. The action plan for this strategy will put a greater emphasis on investments that require hundreds of billions of euro in new technologies, infrastructure, improve energy intensity, low carbon energy technologies. Romania's energy challenge will depend on the new interconnection modern and smart, both within the country and other European countries, energy saving practices and technologies. This challenge is particularly important as Romania has recovered severe gaps in the level of economic performance compared to developed countries. Such investment will have a significant impact on transmission costs, especially electricity, while network tariffs will rise slightly. Some costs will be higher due to support programs in renewable energy nationwide.Measures are more economically sustainable to maintain or even reinforce the electricity market, which system can be flexible in order to address any issues of adequacy. These measures include investments in border infrastructure (the higher the network, so it is easier to evenly distribute energy from renewable sources, to measure demand response and energy storage solutions.An integrated European infrastructure will ensure economic growth in countries interconnected and thus Romania. Huge energy potential of

  19. Back-end interconnection. A generic concept for high volume manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Bosman, J.; Budel, T.; De Kok, C.J.G.M.

    2013-10-15

    The general method to realize series connection in thin film PV modules is monolithical interconnection through a sequence of laser scribes (P1, P2 and P3) and layer depositions. This method however implies that the deposition processes are interrupted several times, an undesirable situation in high volume processing. In order to eliminate this drawback we focus our developments on the so called 'back-end interconnection concept' in which series interconnection takes place AFTER the deposition of the functional layers of the thin film PV device. The process of making a back-end interconnection combines laser scribing, curing, sintering and inkjet processes. These different processes interacts with each other and are investigated in order to create processing strategies that are robust to ensure high volume production. The generic approach created a technology base that can be applied to any thin film PV technology.

  20. Chip-package nano-structured copper and nickel interconnections with metallic and polymeric bonding interfaces

    Science.gov (United States)

    Aggarwal, Ankur

    With the semiconductor industry racing toward a historic transition, nano chips with less than 45 nm features demand I/Os in excess of 20,000 that support computing speed in terabits per second, with multi-core processors aggregately providing highest bandwidth at lowest power. On the other hand, emerging mixed signal systems are driving the need for 3D packaging with embedded active components and ultra-short interconnections. Decreasing I/O pitch together with low cost, high electrical performance and high reliability are the key technological challenges identified by the 2005 International Technology Roadmap for Semiconductors (ITRS). Being able to provide several fold increase in the chip-to-package vertical interconnect density is essential for garnering the true benefits of nanotechnology that will utilize nano-scale devices. Electrical interconnections are multi-functional materials that must also be able to withstand complex, sustained and cyclic thermo-mechanical loads. In addition, the materials must be environmentally-friendly, corrosion resistant, thermally stable over a long time, and resistant to electro-migration. A major challenge is also to develop economic processes that can be integrated into back end of the wafer foundry, i.e. with wafer level packaging. Device-to-system board interconnections are typically accomplished today with either wire bonding or solders. Both of these are incremental and run into either electrical or mechanical barriers as they are extended to higher density of interconnections. Downscaling traditional solder bump interconnect will not satisfy the thermo-mechanical reliability requirements at very fine pitches of the order of 30 microns and less. Alternate interconnection approaches such as compliant interconnects typically require lengthy connections and are therefore limited in terms of electrical properties, although expected to meet the mechanical requirements. A novel chip-package interconnection technology is

  1. Power System Study for Renewable Energy Interconnection in Malaysia

    International Nuclear Information System (INIS)

    Askar, O F; Ramachandaramurthy, V K

    2013-01-01

    The renewable energy (RE) sector has grown exponentially in Malaysia with the introduction of the Feed-In-Tariff (FIT) by the Ministry of Energy, Green Technology and Water. Photovoltaic, biogas, biomass and mini hydro are among the renewable energy sources which offer a lucrative tariff to incite developers in taking the green technology route. In order to receive the FIT, a developer is required by the utility company to perform a power system analysis which will determine the technical feasibility of an RE interconnection to the utility company's existing grid system. There are a number of aspects which the analysis looks at, the most important being the load flow and fault levels in the network after the introduction of an RE source. The analysis is done by modelling the utility company's existing network and simulating the network with the interconnection of an RE source. The results are then compared to the values before an interconnection is made as well as ensuring the voltage rise or the increase in fault levels do not violate any pre-existing regulations set by the utility company. This paper will delve into the mechanics of performing a load flow analysis and examining the results obtained.

  2. Power System Study for Renewable Energy Interconnection in Malaysia

    Science.gov (United States)

    Askar, O. F.; Ramachandaramurthy, V. K.

    2013-06-01

    The renewable energy (RE) sector has grown exponentially in Malaysia with the introduction of the Feed-In-Tariff (FIT) by the Ministry of Energy, Green Technology and Water. Photovoltaic, biogas, biomass and mini hydro are among the renewable energy sources which offer a lucrative tariff to incite developers in taking the green technology route. In order to receive the FIT, a developer is required by the utility company to perform a power system analysis which will determine the technical feasibility of an RE interconnection to the utility company's existing grid system. There are a number of aspects which the analysis looks at, the most important being the load flow and fault levels in the network after the introduction of an RE source. The analysis is done by modelling the utility company's existing network and simulating the network with the interconnection of an RE source. The results are then compared to the values before an interconnection is made as well as ensuring the voltage rise or the increase in fault levels do not violate any pre-existing regulations set by the utility company. This paper will delve into the mechanics of performing a load flow analysis and examining the results obtained.

  3. Smart Optoelectronic Sensors and Intelligent Sensor Systems

    Directory of Open Access Journals (Sweden)

    Sergey Y. YURISH

    2012-03-01

    Full Text Available Light-to-frequency converters are widely used in various optoelectronic sensor systems. However, a further frequency-to-digital conversion is a bottleneck in such systems due to a broad frequency range of light-to-frequency converters’ outputs. This paper describes an effective OEM design approach, which can be used for smart and intelligent sensor systems design. The design is based on novel, multifunctional integrated circuit of Universal Sensors & Transducers Interface especially designed for such sensor applications. Experimental results have confirmed an efficiency of this approach and high metrological performances.

  4. Graphene optoelectronics synthesis, characterization, properties, and applications

    CERN Document Server

    bin M Yusoff, Abdul Rashid

    2014-01-01

    This first book on emerging applications for this innovative material gives an up-to-date account of the many opportunities graphene offers high-end optoelectronics.The text focuses on potential as well as already realized applications, discussing metallic and passive components, such as transparent conductors and smart windows, as well as high-frequency devices, spintronics, photonics, and terahertz devices. Also included are sections on the fundamental properties, synthesis, and characterization of graphene. With its unique coverage, this book will be welcomed by materials scientists, solid-

  5. Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10

    Science.gov (United States)

    1992-07-01

    ichi Gonda, Osaka University, Co-Chair Yasuhiko Arakawa, University of Tokyo Hiroyoshi Matsumura, Hitachi Alan Miller, University of Central Florida...M.H.Meynadier, et al. Phys. Rev. Lett. 29(12), (1984), 7042. 84 Mesoscopic Size Fabrication Technology Yasuhiko Arakawa Research Center for Advanced

  6. Electrical Interconnections Through CMOS Wafers

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... describes the development of vias through a silicon wafer containing Complementary Metal-Oxide Semiconductor (CMOS) circuitry. Two via technologies have been developed and fabricated in blank silicon wafers; one based on KOH etching of wafer through-holes and one based on DRIE of wafer through......-holes. The most promising of these technologies --- the DRIE based process --- has been implemented in CMOS wafers containing hearing aid amplifiers. The main challenges in the development of a CMOS compatible via process depend on the chosen process for etching of wafer through-holes. In the case of KOH etching...

  7. Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications

    Science.gov (United States)

    Romeira, Bruno; Figueiredo, José M. L.; Javaloyes, Julien

    2017-11-01

    With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

  8. SSC [Superconducting Super Collider] magnet mechanical interconnections

    International Nuclear Information System (INIS)

    Bossert, R.C.; Niemann, R.C.; Carson, J.A.; Ramstein, W.L.; Reynolds, M.P.; Engler, N.H.

    1989-03-01

    Installation of superconducting accelerator dipole and quadrupole magnets and spool pieces in the SSC tunnel requires the interconnection of the cryostats. The connections are both of an electrical and mechanical nature. The details of the mechanical connections are presented. The connections include piping, thermal shields and insulation. There are seven piping systems to be connected. These systems must carry cryogenic fluids at various pressures or maintain vacuum and must be consistently leak tight. The interconnection region must be able to expand and contract as magnets change in length while cooling and warming. The heat leak characteristics of the interconnection region must be comparable to that of the body of the magnet. Rapid assembly and disassembly is required. The magnet cryostat development program is discussed. Results of quality control testing are reported. Results of making full scale interconnections under magnet test situations are reviewed. 11 figs., 4 tabs

  9. The Interconnections of the LHC Cryomagnets

    CERN Document Server

    Jacquemod, A; Skoczen, Blazej; Tock, J P

    2001-01-01

    The main components of the LHC, the next world-class facility in high-energy physics, are the twin-aperture high-field superconducting cryomagnets to be installed in the existing 26.7-km long tunnel. After installation and alignment, the cryomagnets have to be interconnected. The interconnections must ensure the continuity of several functions: vacuum enclosures, beam pipe image currents (RF contacts), cryogenic circuits, electrical power supply, and thermal insulation. In the machine, about 1700 interconnections between cryomagnets are necessary. The interconnections constitute a unique system that is nearly entirely assembled in the tunnel. For each of them, various operations must be done: TIG welding of cryogenic channels (~ 50 000 welds), induction soldering of main superconducting cables (~ 10 000 joints), ultrasonic welding of auxiliary superconducting cables (~ 20 000 welds), mechanical assembly of various elements, and installation of the multi-layer insulation (~ 200 000 m2). Defective junctions cou...

  10. Recent Development of SOFC Metallic Interconnect

    Energy Technology Data Exchange (ETDEWEB)

    Wu JW, Liu XB

    2010-04-01

    Interest in solid oxide fuel cells (SOFC) stems from their higher e±ciencies and lower levels of emitted pollu- tants, compared to traditional power production methods. Interconnects are a critical part in SOFC stacks, which connect cells in series electrically, and also separate air or oxygen at the cathode side from fuel at the anode side. Therefore, the requirements of interconnects are the most demanding, i:e:, to maintain high elec- trical conductivity, good stability in both reducing and oxidizing atmospheres, and close coe±cient of thermal expansion (CTE) match and good compatibility with other SOFC ceramic components. The paper reviewed the interconnect materials, and coatings for metallic interconnect materials.

  11. Epidemics in interconnected small-world networks.

    Science.gov (United States)

    Liu, Meng; Li, Daqing; Qin, Pengju; Liu, Chaoran; Wang, Huijuan; Wang, Feilong

    2015-01-01

    Networks can be used to describe the interconnections among individuals, which play an important role in the spread of disease. Although the small-world effect has been found to have a significant impact on epidemics in single networks, the small-world effect on epidemics in interconnected networks has rarely been considered. Here, we study the susceptible-infected-susceptible (SIS) model of epidemic spreading in a system comprising two interconnected small-world networks. We find that the epidemic threshold in such networks decreases when the rewiring probability of the component small-world networks increases. When the infection rate is low, the rewiring probability affects the global steady-state infection density, whereas when the infection rate is high, the infection density is insensitive to the rewiring probability. Moreover, epidemics in interconnected small-world networks are found to spread at different velocities that depend on the rewiring probability.

  12. Epidemics in interconnected small-world networks.

    Directory of Open Access Journals (Sweden)

    Meng Liu

    Full Text Available Networks can be used to describe the interconnections among individuals, which play an important role in the spread of disease. Although the small-world effect has been found to have a significant impact on epidemics in single networks, the small-world effect on epidemics in interconnected networks has rarely been considered. Here, we study the susceptible-infected-susceptible (SIS model of epidemic spreading in a system comprising two interconnected small-world networks. We find that the epidemic threshold in such networks decreases when the rewiring probability of the component small-world networks increases. When the infection rate is low, the rewiring probability affects the global steady-state infection density, whereas when the infection rate is high, the infection density is insensitive to the rewiring probability. Moreover, epidemics in interconnected small-world networks are found to spread at different velocities that depend on the rewiring probability.

  13. Optoelectronic pH Meter: Further Details

    Science.gov (United States)

    Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

    2009-01-01

    A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

  14. Welfare and competition effects of electricity interconnection between Ireland and Great Britain

    International Nuclear Information System (INIS)

    Malaguzzi Valeri, Laura

    2009-01-01

    This study analyzes the effects of additional interconnection on welfare and competition in the Irish electricity market. I simulate the wholesale electricity markets of the island of Ireland and Great Britain for 2005. I find that in order for the two markets to be integrated in 2005, additional interconnection would have to be large. The amount of interconnection decreases for high costs of carbon, since this causes the markets to become more similar. This suggests that in the absence of strategic behavior of firms, most of the gains from trade derive not from differences in size between countries, but from technology differences and are strongly influenced by fuel and carbon costs. Social welfare increases with interconnection, although at a decreasing rate. As the amount of interconnection increases, there are also positive effects on competition in Ireland, the less competitive of the two markets. Finally, it is unlikely that private investors will pay for the optimal amount of interconnection since their returns are significantly smaller than the total social benefit of interconnection. (author)

  15. Epidemics spreading in interconnected complex networks

    International Nuclear Information System (INIS)

    Wang, Y.; Xiao, G.

    2012-01-01

    We study epidemic spreading in two interconnected complex networks. It is found that in our model the epidemic threshold of the interconnected network is always lower than that in any of the two component networks. Detailed theoretical analysis is proposed which allows quick and accurate calculations of epidemic threshold and average outbreak/epidemic size. Theoretical analysis and simulation results show that, generally speaking, the epidemic size is not significantly affected by the inter-network correlation. In interdependent networks which can be viewed as a special case of interconnected networks, however, impacts of inter-network correlation on the epidemic threshold and outbreak size are more significant. -- Highlights: ► We study epidemic spreading in two interconnected complex networks. ► The epidemic threshold is lower than that in any of the two networks. And Interconnection correlation has impacts on threshold and average outbreak size. ► Detailed theoretical analysis is proposed which allows quick and accurate calculations of epidemic threshold and average outbreak/epidemic size. ► We demonstrated and proved that Interconnection correlation does not affect epidemic size significantly. ► In interdependent networks, impacts of inter-network correlation on the epidemic threshold and outbreak size are more significant.

  16. Epidemics spreading in interconnected complex networks

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of High Performance Computing, Agency for Science, Technology and Research (A-STAR), Singapore 138632 (Singapore); Xiao, G., E-mail: egxxiao@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2012-09-03

    We study epidemic spreading in two interconnected complex networks. It is found that in our model the epidemic threshold of the interconnected network is always lower than that in any of the two component networks. Detailed theoretical analysis is proposed which allows quick and accurate calculations of epidemic threshold and average outbreak/epidemic size. Theoretical analysis and simulation results show that, generally speaking, the epidemic size is not significantly affected by the inter-network correlation. In interdependent networks which can be viewed as a special case of interconnected networks, however, impacts of inter-network correlation on the epidemic threshold and outbreak size are more significant. -- Highlights: ► We study epidemic spreading in two interconnected complex networks. ► The epidemic threshold is lower than that in any of the two networks. And Interconnection correlation has impacts on threshold and average outbreak size. ► Detailed theoretical analysis is proposed which allows quick and accurate calculations of epidemic threshold and average outbreak/epidemic size. ► We demonstrated and proved that Interconnection correlation does not affect epidemic size significantly. ► In interdependent networks, impacts of inter-network correlation on the epidemic threshold and outbreak size are more significant.

  17. Introduction to organic electronic and optoelectronic materials and devices

    CERN Document Server

    Sun, Sam-Shajing

    2008-01-01

    Introduction to Optoelectronic Materials, N. Peyghambarian and M. Fallahi Introduction to Optoelectronic Device Principles, J. Piprek Basic Electronic Structures and Charge Carrier Generation in Organic Optoelectronic Materials, S.-S. Sun Charge Transport in Conducting Polymers, V.N. Prigodin and A.J. Epstein Major Classes of Organic Small Molecules for Electronic and Optoelectronics, X. Meng, W. Zhu, and H. Tian Major Classes of Conjugated Polymers and Synthetic Strategies, Y. Li and J. Hou Low Energy Gap, Conducting, and Transparent Polymers, A. Kumar, Y. Ner, and G.A. Sotzing Conjugated Polymers, Fullerene C60, and Carbon Nanotubes for Optoelectronic Devices, L. Qu, L. Dai, and S.-S. Sun Introduction of Organic Superconducting Materials, H. Mori Molecular Semiconductors for Organic Field-Effect Transistors, A. Facchetti Polymer Field-Effect Transistors, H.G.O. Sandberg Organic Molecular Light-Emitting Materials and Devices, F. So and J. Shi Polymer Light-Emitting Diodes: Devices and Materials, X. Gong and ...

  18. Performance of thin pixel sensors irradiated up to a fluence of 10{sup 16}n{sub eq}cm{sup -2} and development of a new interconnection technology for the upgrade of the ATLAS pixel system

    Energy Technology Data Exchange (ETDEWEB)

    Macchiolo, A., E-mail: Anna.Macchiolo@mpp.mpg.de [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Andricek, L. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, D-81739 Muenchen (Germany); Beimforde, M. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Moser, H.-G. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, D-81739 Muenchen (Germany); Nisius, R. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Richter, R.H. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, D-81739 Muenchen (Germany); Weigell, P. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany)

    2011-09-11

    A new pixel module concept is presented, where thin sensors and a novel vertical integration technique are combined. This R and D activity is carried out in view of the ATLAS pixel detector upgrades. A first set of n-in-p pixel sensors with active thicknesses of 75 and 150{mu}m has been produced using a thinning technique developed at the Max-Planck-Institut Halbleiterlabor (HLL). Charge Collection Efficiency measurements have been performed, yielding a higher CCE than expected from the present radiation damage models. The interconnection of thin n-in-p pixels to the FE-I3 ATLAS electronics is under way, exploiting the Solid Liquid Interdiffusion (SLID) technique developed by the Fraunhofer Institut EMFT. In addition, preliminary studies aimed at Inter-Chip-Vias (ICV) etching into the FE-I3 electronics are reported. ICVs will be used to route the signals vertically through the read-out chip, to newly created pads on the backside. This should serve as a proof of principle for future four-side tileable pixel assemblies, avoiding the cantilever presently needed in the chip for the wire bonding.

  19. Performance of thin pixel sensors irradiated up to a fluence of 1016neqcm-2 and development of a new interconnection technology for the upgrade of the ATLAS pixel system

    International Nuclear Information System (INIS)

    Macchiolo, A.; Andricek, L.; Beimforde, M.; Moser, H.-G.; Nisius, R.; Richter, R.H.; Weigell, P.

    2011-01-01

    A new pixel module concept is presented, where thin sensors and a novel vertical integration technique are combined. This R and D activity is carried out in view of the ATLAS pixel detector upgrades. A first set of n-in-p pixel sensors with active thicknesses of 75 and 150μm has been produced using a thinning technique developed at the Max-Planck-Institut Halbleiterlabor (HLL). Charge Collection Efficiency measurements have been performed, yielding a higher CCE than expected from the present radiation damage models. The interconnection of thin n-in-p pixels to the FE-I3 ATLAS electronics is under way, exploiting the Solid Liquid Interdiffusion (SLID) technique developed by the Fraunhofer Institut EMFT. In addition, preliminary studies aimed at Inter-Chip-Vias (ICV) etching into the FE-I3 electronics are reported. ICVs will be used to route the signals vertically through the read-out chip, to newly created pads on the backside. This should serve as a proof of principle for future four-side tileable pixel assemblies, avoiding the cantilever presently needed in the chip for the wire bonding.

  20. Interconnect mechanisms in microelectronic packaging

    Science.gov (United States)

    Roma, Maria Penafrancia C.

    alloy showed differences in adhesion strength and IMC formation. Bond strength by wire pull testing showed the 95Ag alloy with higher values while shear bond testing showed the 88Ag higher bond strength. Use of Cu pillars in flip chips and eutectic bonding in wafer level chip scale packages are direct consequences of diminishing interconnect dimension as a result of the drive for miniaturization. The combination of Cu-Sn interdiffusion, Kirkendall mechanism and heterogeneous vacancy precipitation are the main causes of IMC and void formation in Cu pillar - Sn solder - Cu lead frame sandwich structure. However, adding a Ni barrier agent showed less porous IMC layer as well as void formation as a result of the modified Cu and Sn movement well as the void formation. Direct die to die bonding using Al-Ge eutectic bonds is necessary when 3D integration is needed to reduce the footprint of a package. Hermeticity and adhesion strength are a function of the Al/Ge thickness ratio, bonding pressure, temperature and time. Scanning Electron Microscope (SEM) and Focused Ion Beam (FIB) allowed imaging of interfacial microstructures, porosity, grain morphology while Scanning Transmission Electron microscope (STEM) provided diffusion profile and confirmed interdiffusion. Ion polishing technique provided information on porosity and when imaged using backscattered mode, grain structure confirmed mechanical deformation of the bonds. Measurements of the interfacial bond strength are made by wire pull tests and ball shear tests based on existing industry standard tests. However, for the Al-Ge eutectic bonds, no standard strength is available so a test is developed using the stud pull test method using the Dage 4000 Plus to yield consistent results. Adhesion strengths of 30-40 MPa are found for eutectic bonded packages however, as low as 20MPa was measured in low temperature bonded areas.

  1. Carbon Nanotubes and Graphene Nanoribbons: Potentials for Nanoscale Electrical Interconnects

    Directory of Open Access Journals (Sweden)

    Swastik Kar

    2013-08-01

    Full Text Available Carbon allotropes have generated much interest among different scientific communities due to their peculiar properties and potential applications in a variety of fields. Carbon nanotubes and more recently graphene have shown very interesting electrical properties along with the possibility of being grown and/or deposited at a desired location. In this Review, we will focus our attention on carbon-based nanostructures (in particular, carbon nanotubes and graphene nanoribbons which could play an important role in the technological quest to replace copper/low-k for interconnect applications. We will provide the reader with a number of possible architectures, including single-wall as well as multi-wall carbon nanotubes, arranged in horizontal and vertical arrays, regarded as individual objects as well as bundles. Modification of their functional properties in order to fulfill interconnect applications requirements are also presented. Then, in the second part of the Review, recently discovered graphene and in particular graphene and few-graphene layers nanoribbons are introduced. Different architectures involving nanostructured carbon are presented and discussed in light of interconnect application in terms of length, chirality, edge configuration and more.

  2. Chip-Level Electromigration Reliability for Cu Interconnects

    International Nuclear Information System (INIS)

    Gall, M.; Oh, C.; Grinshpon, A.; Zolotov, V.; Panda, R.; Demircan, E.; Mueller, J.; Justison, P.; Ramakrishna, K.; Thrasher, S.; Hernandez, R.; Herrick, M.; Fox, R.; Boeck, B.; Kawasaki, H.; Haznedar, H.; Ku, P.

    2004-01-01

    Even after the successful introduction of Cu-based metallization, the electromigration (EM) failure risk has remained one of the most important reliability concerns for most advanced process technologies. Ever increasing operating current densities and the introduction of low-k materials in the backend process scheme are some of the issues that threaten reliable, long-term operation at elevated temperatures. The traditional method of verifying EM reliability only through current density limit checks is proving to be inadequate in general, or quite expensive at the best. A Statistical EM Budgeting (SEB) methodology has been proposed to assess more realistic chip-level EM reliability from the complex statistical distribution of currents in a chip. To be valuable, this approach requires accurate estimation of currents for all interconnect segments in a chip. However, no efficient technique to manage the complexity of such a task for very large chip designs is known. We present an efficient method to estimate currents exhaustively for all interconnects in a chip. The proposed method uses pre-characterization of cells and macros, and steps to identify and filter out symmetrically bi-directional interconnects. We illustrate the strength of the proposed approach using a high-performance microprocessor design for embedded applications as a case study

  3. An RLC interconnect analyzable crosstalk model considering self-heating effect

    International Nuclear Information System (INIS)

    Zhu Zhang-Ming; Liu Shu-Bin

    2012-01-01

    According to the thermal profile of actual multilevel interconnects, in this paper we propose a temperature distribution model of multilevel interconnects and derive an analytical crosstalk model for the distributed resistance—inductance—capacitance (RLC) interconnect considering effect of thermal profile. According to the 65-nm complementary metal—oxide semiconductor (CMOS) process, we compare the proposed RLC analytical crosstalk model with the Hspice simulation results for different interconnect coupling conditions and the absolute error is within 6.5%. The computed results of the proposed analytical crosstalk model show that RCL crosstalk decreases with the increase of current density and increases with the increase of insulator thickness. This analytical crosstalk model can be applied to the electronic design automation (EDA) and the design optimization for nanometer CMOS integrated circuits. (interdisciplinary physics and related areas of science and technology)

  4. Low energy routing platforms for optical interconnects using active plasmonics integrated with Silicon Photonics

    DEFF Research Database (Denmark)

    Vyrsokinos, K.; Papaioannou, S.; Kalavrouziotis, D.

    2013-01-01

    technologies to cope with the massive amount of data moving across all hierarchical communication levels, namely rack-to-rack, backplane, chip-to-chip and even on-chip interconnections. Plasmonics comes indeed as a disruptive technology that enables seamless interoperability between light beams and electronic...

  5. A whole-process progressive training mode to foster optoelectronic students' innovative practical ability

    Science.gov (United States)

    Zhong, Hairong; Xu, Wei; Hu, Haojun; Duan, Chengfang

    2017-08-01

    This article analyzes the features of fostering optoelectronic students' innovative practical ability based on the knowledge structure of optoelectronic disciplines, which not only reveals the common law of cultivating students' innovative practical ability, but also considers the characteristics of the major: (1) The basic theory is difficult, and the close combination of science and technology is obvious; (2)With the integration of optics, mechanics, electronics and computer, the system technology is comprehensive; (3) It has both leading-edge theory and practical applications, so the benefit of cultivating optoelectronic students is high ; (4) The equipment is precise and the practice is costly. Considering the concept and structural characteristics of innovative and practical ability, and adhering to the idea of running practice through the whole process, we put forward the construction of three-dimensional innovation and practice platform which consists of "Synthetically Teaching Laboratory + Innovation Practice Base + Scientific Research Laboratory + Major Practice Base + Joint Teaching and Training Base", and meanwhile build a whole-process progressive training mode to foster optoelectronic students' innovative practical ability, following the process of "basic experimental skills training - professional experimental skills training - system design - innovative practice - scientific research project training - expanded training - graduation project": (1) To create an in - class practical ability cultivation environment that has distinctive characteristics of the major, with the teaching laboratory as the basic platform; (2) To create an extra-curricular innovation practice activities cultivation environment that is closely linked to the practical application, with the innovation practice base as a platform for improvement; (3) To create an innovation practice training cultivation environment that leads the development of cutting-edge, with the scientific

  6. Institutional distributed energy interconnection barriers

    International Nuclear Information System (INIS)

    Castelaz, S.A.

    2002-01-01

    This PowerPoint presentation provided an introduction to Encorp Inc., a leading provider of network technology and infrastructure management solutions for the distributed energy market. Encorp develops and markets software and hardware technology solutions for communications, control and networking of distributed energy. It is developing and implementing real-time, distributed energy-focused solutions for a wide variety of applications through new products and services which are technology neutral, and easily networked. Encorp controls more than 500 MW of distributed power with a total of 127 customers. This paper reviewed 3 barriers (regulatory, contractual/tariffs, and business practices) based on US experience. The challenge remaining is to determine if microgrids can be used effectively, and to determine the limitations of bi-directional power flows. The key issues regarding how end-users can share the costs and maximize on the benefits of distributed energy resources include: standby service charges, departing load charges, regulatory uncertainty, rate class degradation, lack of incentives for utility cost reduction, and lack of ability to create experimental tariffs. tabs., figs

  7. Optoelectronic iron detectors for pharmaceutical flow analysis.

    Science.gov (United States)

    Rybkowska, Natalia; Koncki, Robert; Strzelak, Kamil

    2017-10-25

    Compact flow-through optoelectronic detectors fabricated by pairing of light emitting diodes have been applied for development of economic flow analysis systems dedicated for iron ions determination. Three analytical methods with different chromogens selectively recognizing iron ions have been compared. Ferrozine and ferene S based methods offer higher sensitivity and slightly lower detection limits than method with 1,10-phenantroline, but narrower ranges of linear response. Each system allows detection of iron in micromolar range of concentration with comparable sample throughput (20 injections per hour). The developed flow analysis systems have been successfully applied for determination of iron in diet supplements. The utility of developed analytical systems for iron release studies from drug formulations has also been demonstrated. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Investigation of mixed saliva by optoelectronic methods

    Science.gov (United States)

    Savchenko, Ekaterina; Nepomnyashchaya, Elina; Baranov, Maksim; Velichko, Elena; Aksenov, Evgenii; Bogomaz, Tatyana

    2018-04-01

    At present, saliva and its properties are being actively studied. Human saliva is a unique biological material that has potential in clinical practice. A detailed analysis of the characteristics and properties of saliva is relevant for diagnostic purposes. In this paper, the properties and characteristics of saliva are studied using optoelectronic methods: dynamic light scattering, electrophoretic light scattering and optical microscopy. Mixed saliva from a healthy patient and patient with diabetes mellitus type 2 was used as an object of the study. The dynamics of the behavior of a healthy and patient with diabetes mellitus type 2 is visible according to the results obtained. All three methods confirm hypothesis of structural changes in mixed saliva in the disease of diabetes mellitus type 2.

  9. State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

    Directory of Open Access Journals (Sweden)

    Eng Png Ching

    2015-01-01

    Full Text Available Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc. and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

  10. Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

    Science.gov (United States)

    Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

    2013-10-13

    Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

  11. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    Science.gov (United States)

    Yadav, Shriniwas; Kaur, Inderpreet

    2016-04-01

    Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  12. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990

    International Nuclear Information System (INIS)

    Razeghi, M.

    1991-01-01

    The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry

  13. Production process for advanced space satellite system cables/interconnects.

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza, Luis A.

    2007-12-01

    This production process was generated for the satellite system program cables/interconnects group, which in essences had no well defined production process. The driver for the development of a formalized process was based on the set backs, problem areas, challenges, and need improvements faced from within the program at Sandia National Laboratories. In addition, the formal production process was developed from the Master's program of Engineering Management for New Mexico Institute of Mining and Technology in Socorro New Mexico and submitted as a thesis to meet the institute's graduating requirements.

  14. Comprehensive evaluation of global energy interconnection development index

    Science.gov (United States)

    Liu, Lin; Zhang, Yi

    2018-04-01

    Under the background of building global energy interconnection and realizing green and low-carbon development, this article constructed the global energy interconnection development index system which based on the current situation of global energy interconnection development. Through using the entropy method for the weight analysis of global energy interconnection development index, and then using gray correlation method to analyze the selected countries, this article got the global energy interconnection development index ranking and level classification.

  15. Carbon nanotube and graphene nanoribbon interconnects

    CERN Document Server

    Das, Debaprasad

    2014-01-01

    "The book, Caron Nanotube and Graphene Nanoribbon Interconnects, authored by Drs. Debapraad Das and Hafizur Rahaman serves as a good source of material on CNT and GNR interconnects for readers who wish to get into this area and also for practicing engineers who would like to be updated in advances of this field."-Prof. Ashok Srivastava, Louisiana State University, Baton Rouge, USA"Mathematical analysis included in each and every chapter is the main strength of the materials. ... The book is very precise and useful for those who are working in this area. ... highly focused, very compact, and easy to apply. ... This book depicts a detailed analysis and modelling of carbon nanotube and graphene nanoribbon interconnects. The book also covers the electrical circuit modelling of carbon nanotubes and graphene nanoribbons."-Prof. Chandan Kumar Sarkar, Jadavpur University, Kolkata, India.

  16. Packaging and interconnection for superconductive circuitry

    International Nuclear Information System (INIS)

    Anacker, W.

    1976-01-01

    A three dimensional microelectronic module packaged for reduced signal propagation delay times including a plurality of circuit carrying means, which may comprise unbacked chips, with integrated superconductive circuitry thereon is described. The circuit carrying means are supported on their edges and have contact lands in the vicinity of, or at, the edges to provide for interconnecting circuitry. The circuit carrying means are supported by supporting means which include slots to provide a path for interconnection wiring to contact the lands of the circuit carrying means. Further interconnecting wiring may take the form of integrated circuit wiring on the reverse side of the supporting means. The low heat dissipation of the superconductive circuitry allows the circuit carrying means to be spaced approximately no less than 30 mils apart. The three dimensional arrangement provides lower random propagation delays than would a planar array of circuits

  17. Laser printing of 3D metallic interconnects

    Science.gov (United States)

    Beniam, Iyoel; Mathews, Scott A.; Charipar, Nicholas A.; Auyeung, Raymond C. Y.; Piqué, Alberto

    2016-04-01

    The use of laser-induced forward transfer (LIFT) techniques for the printing of functional materials has been demonstrated for numerous applications. The printing gives rise to patterns, which can be used to fabricate planar interconnects. More recently, various groups have demonstrated electrical interconnects from laser-printed 3D structures. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or of pastes containing dispersed metallic particles. However, the generated 3D structures do not posses the same metallic conductivity as a bulk metal interconnect of the same cross-section and length as those formed by wire bonding or tab welding. An alternative is to laser transfer entire 3D structures using a technique known as lase-and-place. Lase-and-place is a LIFT process whereby whole components and parts can be transferred from a donor substrate onto a desired location with one single laser pulse. This paper will describe the use of LIFT to laser print freestanding, solid metal foils or beams precisely over the contact pads of discrete devices to interconnect them into fully functional circuits. Furthermore, this paper will also show how the same laser can be used to bend or fold the bulk metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief for the circuits under flexing or during motion from thermal mismatch. These interconnect "ridges" can span wide gaps (on the order of a millimeter) and accommodate height differences of tens of microns between adjacent devices. Examples of these laser printed 3D metallic bridges and their role in the development of next generation electronics by additive manufacturing will be presented.

  18. Optical interconnect for large-scale systems

    Science.gov (United States)

    Dress, William

    2013-02-01

    This paper presents a switchless, optical interconnect module that serves as a node in a network of identical distribution modules for large-scale systems. Thousands to millions of hosts or endpoints may be interconnected by a network of such modules, avoiding the need for multi-level switches. Several common network topologies are reviewed and their scaling properties assessed. The concept of message-flow routing is discussed in conjunction with the unique properties enabled by the optical distribution module where it is shown how top-down software control (global routing tables, spanning-tree algorithms) may be avoided.

  19. Regulate or deregulate. Influencing network interconnection charges

    Energy Technology Data Exchange (ETDEWEB)

    Van De Wielle, B.

    2003-06-01

    We study the choice between regulating interconnection charges or delegating their determination to the operators, both in a non-mature and a mature market. Three regulatory regimes are considered: full, cost-based and bill-and-keep. Delegation corresponds to bargaining about the interconnection charges using the regulatory schemes as disagreement outcomes. Applying regulation benefits the consumers. Under full regulation, access charges account for asymmetries and allow a unique Ramsey price. Delegation benefits the operators. In a mature market delegation robs the government of any market influence. In a non-mature market government preferences coincide with those of the largest operator and are disadvantageous for entry.

  20. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    Energy Technology Data Exchange (ETDEWEB)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  1. Fabrication method to create high-aspect ratio pillars for photonic coupling of board level interconnects

    Science.gov (United States)

    Debaes, C.; Van Erps, J.; Karppinen, M.; Hiltunen, J.; Suyal, H.; Last, A.; Lee, M. G.; Karioja, P.; Taghizadeh, M.; Mohr, J.; Thienpont, H.; Glebov, A. L.

    2008-04-01

    An important challenge that remains to date in board level optical interconnects is the coupling between the optical waveguides on printed wiring boards and the packaged optoelectronics chips, which are preferably surface mountable on the boards. One possible solution is the use of Ball Grid Array (BGA) packages. This approach offers a reliable attachment despite the large CTE mismatch between the organic FR4 board and the semiconductor materials. Collimation via micro-lenses is here typically deployed to couple the light vertically from the waveguide substrate to the optoelectronics while allowing for a small misalignment between board and package. In this work, we explore the fabrication issues of an alternative approach in which the vertical photonic connection between board and package is governed by a micro-optical pillar which is attached both to the board substrate and to the optoelectronic chips. Such an approach allows for high density connections and small, high-speed detector footprints while maintaining an acceptable tolerance between board and package. The pillar should exhibit some flexibility and thus a high-aspect ratio is preferred. This work presents and compares different fabrication methods and applies different materials for such high-aspect ratio pillars. The different fabrication methods are: photolithography, direct laser writing and deep proton writing. The selection of optical materials that was investigated is: SU8, Ormocers, PU and a multifunctional acrylate polymer. The resulting optical pillars have diameters ranging from 20um up to 80um, with total heights ranging between 30um and 100um (symbol for micron). The aspect-ratio of the fabricated structures ranges from 1.5 to 5.

  2. Fiber bundle probes for interconnecting miniaturized medical imaging devices

    Science.gov (United States)

    Zamora, Vanessa; Hofmann, Jens; Marx, Sebastian; Herter, Jonas; Nguyen, Dennis; Arndt-Staufenbiel, Norbert; Schröder, Henning

    2017-02-01

    Miniaturization of medical imaging devices will significantly improve the workflow of physicians in hospitals. Photonic integrated circuit (PIC) technologies offer a high level of miniaturization. However, they need fiber optic interconnection solutions for their functional integration. As part of European funded project (InSPECT) we investigate fiber bundle probes (FBPs) to be used as multi-mode (MM) to single-mode (SM) interconnections for PIC modules. The FBP consists of a set of four or seven SM fibers hexagonally distributed and assembled into a holder that defines a multicore connection. Such a connection can be used to connect MM fibers, while each SM fiber is attached to the PIC module. The manufacturing of these probes is explored by using well-established fiber fusion, epoxy adhesive, innovative adhesive and polishing techniques in order to achieve reliable, low-cost and reproducible samples. An innovative hydrofluoric acid-free fiber etching technology has been recently investigated. The preliminary results show that the reduction of the fiber diameter shows a linear behavior as a function of etching time. Different etch rate values from 0.55 μm/min to 2.3 μm/min were found. Several FBPs with three different type of fibers have been optically interrogated at wavelengths of 630nm and 1550nm. Optical losses are found of approx. 35dB at 1550nm for FBPs composed by 80μm fibers. Although FBPs present moderate optical losses, they might be integrated using different optical fibers, covering a broad spectral range required for imaging applications. Finally, we show the use of FBPs as promising MM-to-SM interconnects for real-world interfacing to PIC's.

  3. Advanced Platform for Development and Evaluation of Grid Interconnection Systems Using Hardware-in-the-Loop: Part III -- Grid Interconnection System Evaluator: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, B.; Shirazi, M.; Coddington, M.; Kroposki, B.

    2013-01-01

    This paper, presented at the IEEE Green Technologies Conference 2013, describes a Grid Interconnection System Evaluator (GISE) that leverages hardware-in-the-loop (HIL) simulation techniques to rapidly evaluate the grid interconnection standard conformance of an ICS according to the procedures in IEEE Std 1547.1 (TM). The architecture and test sequencing of this evaluation tool, along with a set of representative ICS test results from three different photovoltaic (PV) inverters, are presented. The GISE adds to the National Renewable Energy Laboratory's (NREL) evaluation platform that now allows for rapid development of ICS control algorithms using controller HIL (CHIL) techniques, the ability to test the dc input characteristics of PV-based ICSs through the use of a PV simulator capable of simulating real-world dynamics using power HIL (PHIL), and evaluation of ICS grid interconnection conformance.

  4. Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

    Science.gov (United States)

    Liang, Yu Teng

    Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic

  5. Organic Optoelectronic Devices Employing Small Molecules

    Science.gov (United States)

    Fleetham, Tyler Blain

    Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt

  6. Production and characterization of SLID interconnected n-in-p pixel modules with 75 micron thin silicon sensors

    CERN Document Server

    Andricek, L; Macchiolo, A; Moser, H.G; Nisius, R; Richter, R.H; Terzo, S; Weigell, P

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. T...

  7. Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors

    CERN Document Server

    Andricek, L; Macchiolo, A.; Moser, H.-G.; Nisius, R.; Richter, R.H.; Terzo, S.; Weigell, P.

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tunability, charge collection, cluster sizes and hit efficiencies. Targeting at ...

  8. Cesium reservoir and interconnective components

    International Nuclear Information System (INIS)

    1994-03-01

    The program objective is to demonstrate the technology readiness of a TFE (thermionic fuel element) suitable for use as the basic element in a thermionic reactor with electric power output in the 0.5 to 5.0 MW range. A thermionic converter must be supplied with cesium vapor for two reasons. Cesium atoms adsorbed on the surface of the emitter cause a reduction of the emitter work function to permit high current densities without excessive heating of the emitter. The second purpose of the cesium vapor is to provide space-charge neutralization in the emitter-collector gap so that the high current densities may flow across the gap unattenuated. The function of the cesium reservoir is to provide a source of cesium atoms, and to provide a reserve in the event that cesium is lost from the plasma by any mechanism. This can be done with a liquid cesium metal reservoir in which case it is heated to the desired temperature with auxiliary heaters. In a TFE, however, it is desirable to have the reservoir passively heated by the nuclear fuel. In this case, the reservoir must operate at a temperature intermediate between the emitter and the collector, ruling out the use of liquid reservoirs. Integral reservoirs contained within the TFE will produce cesium vapor pressures in the desired range at typical electrode temperatures. The reservoir material that appears to be the best able to meet requirements is graphite. Cesium intercalates easily into graphite, and the cesium pressure is insensitive to loading for a given intercalation stage. The goals of the cesium reservoir test program were to verify the performance of Cs-graphite reservoirs in the temperature-pressure range of interest to TFE operation, and to test the operation of these reservoirs after exposure to a fast neutron fluence corresponding to seven year mission lifetime. In addition, other materials were evaluated for possible use in the integral reservoir

  9. Green interconnecting materials for semiconductor industry

    NARCIS (Netherlands)

    Matin, M.A.; Vellinga, W.P.; Geers, M.G.D.; Sawada, K.; Ishida, M.

    2009-01-01

    Interconnecting materials experience a complex thermo-mechanical load in applications. This may lead to the formation of macroscopic cracks resulting from induced stresses of the differences in thermal expansion coefficients on a sample scale (since different materials are involved) and on a grain

  10. Electric network interconnection of Mashreq Arab Countries

    International Nuclear Information System (INIS)

    El-Amin, I.M.; Al-Shehri, A.M.; Opoku, G.; Al-Baiyat, S.A.; Zedan, F.M.

    1994-01-01

    Power system interconnection is a well established practice for a variety of technical and economical reasons. Several interconnected networks exist worldwide for a number of factors. Some of these networks cross international boundaries. This presentation discusses the future developments of the power systems of Mashreq Arab Countries (MAC). MAC consists of Bahrain, Egypt, Iraq, Jordan, Kuwait, Lebanon, Oman, Qatar, Saudi Arabia, United Arab Emirates (UAE), and Yemen. Mac power systems are operated by government or semigovernment bodies. Many of these countries have national or regional electric grids but are generally isolated from each other. With the exception of Saudi Arabia power systems, which employ 60 Hz, all other MAC utilities use 50 Hz frequency. Each country is served by one utility, except Saudi Arabia, which is served by four major utilities and some smaller utilities serving remote towns and small load centers. The major utilities are the Saudi Consolidated electric Company in the Eastern Province (SCECO East), SCECO Center, SCECO West, and SCECO South. These are the ones considered in this study. The energy resources in MAC are varied. Countries such as Egypt, Iraq, and Syria have significant hydro resources.The gulf countries and Iraq have abundant fossil fuel, The variation in energy resources as well as the characteristics of the electric load make it essential to look into interconnections beyond the national boundaries. Most of the existing or planned interconnections involve few power systems. A study involving 12 countries and over 20 utilities with different characteristics represents a very large scale undertaking

  11. Systems theory of interconnected port contact systems

    NARCIS (Netherlands)

    Eberard, D.; Maschke, B.M.; Schaft, A.J. van der

    2005-01-01

    Port-based network modeling of a large class of complex physical systems leads to dynamical systems known as port-Hamiltonian systems. The key ingredient of any port-Hamiltonian system is a power-conserving interconnection structure (mathematically formalized by the geometric notion of a Dirac

  12. Experimental demonstration of titanium nitride plasmonic interconnects

    DEFF Research Database (Denmark)

    Kinsey, N.; Ferrera, M.; Naik, G. V.

    2014-01-01

    An insulator-metal-insulator plasmonic interconnect using TiN, a CMOS-compatible material, is proposed and investigated experimentally at the telecommunication wavelength of 1.55 mu m. The TiN waveguide was shown to obtain propagation losses less than 0.8 dB/mm with a mode size of 9.8 mu m...

  13. Nominate an Organization | Distributed Generation Interconnection

    Science.gov (United States)

    Collaborative | NREL Nominate an Organization Nominate an Organization Do you know of an organization doing high-quality, innovative work on the interconnection of distributed generation? Want to practices by nominating an organization to be profiled in an online case study! Please include your

  14. An architectural model for network interconnection

    NARCIS (Netherlands)

    van Sinderen, Marten J.; Vissers, C.A.; Kalin, T.

    1983-01-01

    This paper presents a technique of successive decomposition of a common users' activity to illustrate the problems of network interconnection. The criteria derived from this approach offer a structuring principle which is used to develop an architectural model that embeds heterogeneous subnetworks

  15. Identifying influential spreaders in interconnected networks

    International Nuclear Information System (INIS)

    Zhao, Dawei; Li, Lixiang; Huo, Yujia; Yang, Yixian; Li, Shudong

    2014-01-01

    Identifying the most influential spreaders in spreading dynamics is of the utmost importance for various purposes for understanding or controlling these processes. The existing relevant works are limited to a single network. Most real networks are actually not isolated, but typically coupled and affected by others. The properties of epidemic spreading have recently been found to have some significant differences in interconnected networks from those in a single network. In this paper, we focus on identifying the influential spreaders in interconnected networks. We find that the well-known k-shell index loses effectiveness; some insignificant spreaders in a single network become the influential spreaders in the whole interconnected networks while some influential spreaders become no longer important. The simulation results show that the spreading capabilities of the nodes not only depend on their influence for the network topology, but also are dramatically influenced by the spreading rate. Based on this perception, a novel index is proposed for measuring the influential spreaders in interconnected networks. We then support the efficiency of this index with numerical simulations. (paper)

  16. Laser printed interconnects for flexible electronics

    Science.gov (United States)

    Pique, Alberto; Beniam, Iyoel; Mathews, Scott; Charipar, Nicholas

    Laser-induced forward transfer (LIFT) can be used to generate microscale 3D structures for interconnect applications non-lithographically. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or dispersed metallic nanoparticles. However, the resulting 3D structures do not achieve the bulk conductivity of metal interconnects of the same cross-section and length as those formed by wire bonding or tab welding. It is possible, however, to laser transfer entire structures using a LIFT technique known as lase-and-place. Lase-and-place allows whole components and parts to be transferred from a donor substrate onto a desired location with one single laser pulse. This talk will present the use of LIFT to laser print freestanding solid metal interconnects to connect individual devices into functional circuits. Furthermore, the same laser can bend or fold the thin metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief due to flexing or thermal mismatch. Examples of these laser printed 3D metallic bridges and their role in the development of next generation flexible electronics by additive manufacturing will be presented. This work was funded by the Office of Naval Research (ONR) through the Naval Research Laboratory Basic Research Program.

  17. Electro-optic techniques for VLSI interconnect

    Science.gov (United States)

    Neff, J. A.

    1985-03-01

    A major limitation to achieving significant speed increases in very large scale integration (VLSI) lies in the metallic interconnects. They are costly not only from the charge transport standpoint but also from capacitive loading effects. The Defense Advanced Research Projects Agency, in pursuit of the fifth generation supercomputer, is investigating alternatives to the VLSI metallic interconnects, especially the use of optical techniques to transport the information either inter or intrachip. As the on chip performance of VLSI continues to improve via the scale down of the logic elements, the problems associated with transferring data off and onto the chip become more severe. The use of optical carriers to transfer the information within the computer is very appealing from several viewpoints. Besides the potential for gigabit propagation rates, the conversion from electronics to optics conveniently provides a decoupling of the various circuits from one another. Significant gains will also be realized in reducing cross talk between the metallic routings, and the interconnects need no longer be constrained to the plane of a thin film on the VLSI chip. In addition, optics can offer an increased programming flexibility for restructuring the interconnect network.

  18. CMOS Optoelectronic Lock-In Amplifier With Integrated Phototransistor Array.

    Science.gov (United States)

    An Hu; Chodavarapu, Vamsy P

    2010-10-01

    We describe the design and development of an optoelectronic lock-in amplifier (LIA) for optical sensing and spectroscopy applications. The prototype amplifier is fabricated using Taiwan Semiconductor Manufacturing Co. complementary metal-oxide semiconductor 0.35-μm technology and uses a phototransistor array (total active area is 400 μm × 640μm) to convert the incident optical signals into electrical currents. The photocurrents are then converted into voltage signals using a transimpedance amplifier for subsequent convenient signal processing by the LIA circuitry. The LIA is optimized to be operational at 20-kHz modulation frequency but is operational in the frequency range from 13 kHz to 25 kHz. The system is tested with a light-emitting diode (LED) as the light source. The noise and signal distortions are suppressed with filters and a phase-locked loop (PLL) implemented in the LIA. The output dc voltage of the LIA is proportional to the incident optical power. The minimum measured dynamic reserve and sensitivity are 1.31 dB and 34 mV/μW, respectively. The output versus input relationship has shown good linearity. The LIA consumes an average power of 12.79 mW with a 3.3-V dc power supply.

  19. Flexible Synthetic Semiconductor Applied in Optoelectronic Organic Sensor

    Directory of Open Access Journals (Sweden)

    Andre F. S. Guedes

    2017-06-01

    Full Text Available The synthesis and application of new nanostructured organic materials, for the development of technology based on organic devices, have taken great interest from the scientific community. The greatest interest in studying organic semiconductor materials has been connected to its already known potential applications, such as: batteries, organic solar cells, flexible organic solar cells, organic light emitting diodes, organic sensors and others. Phototherapy makes use of different radiation sources, and the treatment of hyperbilirubinemia the most common therapeutic intervention occurs in the neonatal period. In this work we developed an organic optoelectronic sensor capable of detecting and determining the radiation dose rate emitted by the radiation source of neonatal phototherapy equipment. The sensors were developed using optically transparent substrate with Nanostructured thin film layers of Poly(9-Vinylcarbazole covered by a layer of Poly(P-Phenylene Vinylene. The samples were characterized by UV-Vis Spectroscopy, Electrical Measurements and SEM. With the results obtained from this study can be developed dosimeters organics to the neonatal phototherapy equipment.

  20. A simple encapsulation method for organic optoelectronic devices

    International Nuclear Information System (INIS)

    Sun Qian-Qian; An Qiao-Shi; Zhang Fu-Jun

    2014-01-01

    The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells (PSCs). The power conversion efficiencies (PCE) of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices. (atomic and molecular physics)

  1. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.; Carberry, Benjamin; Oh, Sang Ho; Myzaferi, Anisa; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    , or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates

  2. Basic opto-electronics on silicon for sensor applications

    NARCIS (Netherlands)

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  3. Opto-electronic devices from block copolymers and their oligomers.

    NARCIS (Netherlands)

    Hadziioannou, G

    1997-01-01

    This paper presents research activities towards the development of polymer materials and devices for optoelectronics, An approach to controlling the conjugation length and transferring the luminescence properties of organic molecules to polymers through black copolymers containing well-defined

  4. Integrated graphene-based devices for optoelectronic applications

    DEFF Research Database (Denmark)

    Xiao, Sanshui

    Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultralarge absorption bandwidth, and extremely fast material response. Here I present novel integrated grapheneplasmonic waveguide modulator showing high modulation depth, thus giving a promising way...

  5. Fiscal 1997 report under consignment from NEDO on the R and D of femto-second technology (development of ultra short pulse optoelectronics technology); 1997 nendo Shin energy Sangyo Gijutsu Sogo Kaihatsu Kiko itaku femto gyo technology no kenkyu kaihatsu (chotan pulse ko electronics gijutsu kaihatsu) seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Very high speed electronics technology is indispensable for the creation of industrial base technology which supports high grade informatizing in the 21st century. The state of light and electronics is controlled in the femto-second time domain. As to the development of femto-second light pulse generation/transmission technology, mode synchronous semiconductor laser was manufactured using the strain quantum well structure aiming at heightening profit, and the repeated frequency, 166GHz, was achieved. Relating to the pulse compression element, exciton photonic band was newly designed. A technology of coding was also studied. As to the development of technology of femto-second light pulse control/distribution, shortening of the wavelength down to 1.5{mu}m and a possibility of femto-second domain high speed response were indicated by the combined double quantum well structure. The quantitative measurement of spin relaxation characteristics was successfully made. By the Mach-Zehnder light switch, obtained was the world`s fastest light switching characteristic. To realize the femto-second class very high speed element, conditions were grasped on the crystal growth of Sb based ultra thin films operating in the 1.5{mu}m zone by studying the quantum well using transition among sub-bands. 242 refs., 280 figs., 12 tabs.

  6. Optical and Optoelectronic Property Analysis of Nanomaterials inside Transmission Electron Microscope.

    Science.gov (United States)

    Fernando, Joseph F S; Zhang, Chao; Firestein, Konstantin L; Golberg, Dmitri

    2017-12-01

    In situ transmission electron microscopy (TEM) allows one to investigate nanostructures at high spatial resolution in response to external stimuli, such as heat, electrical current, mechanical force and light. This review exclusively focuses on the optical, optoelectronic and photocatalytic studies inside TEM. With the development of TEMs and specialized TEM holders that include in situ illumination and light collection optics, it is possible to perform optical spectroscopies and diverse optoelectronic experiments inside TEM with simultaneous high resolution imaging of nanostructures. Optical TEM holders combining the capability of a scanning tunneling microscopy probe have enabled nanomaterial bending/stretching and electrical measurements in tandem with illumination. Hence, deep insights into the optoelectronic property versus true structure and its dynamics could be established at the nanometer-range precision thus evaluating the suitability of a nanostructure for advanced light driven technologies. This report highlights systems for in situ illumination of TEM samples and recent research work based on the relevant methods, including nanomaterial cathodoluminescence, photoluminescence, photocatalysis, photodeposition, photoconductivity and piezophototronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. High-speed VCSEL-based optical interconnects

    Science.gov (United States)

    Ishak, Waguih S.

    2001-11-01

    Vertical Cavity Surface Emitting Lasers (VCSEL) have made significant inroads into commercial realization especially in the area of data communications. Single VCSEL devices are key components in Gb Ethernet Transceivers. A multi-element VCSEL array is the key enabling technology for high-speed multi Gb/s parallel optical interconnect modules. In 1996, several companies introduced a new generation of fiber optic products based VCSEL technology such as multimode fiber transceivers for the ANSI Fiber Channel and Gigabit Ethernet IEEE 802.3 standards. VCSELs offer unique advantages over its edge-emitting counterparts in several areas. These include low-cost (LED-like) manufacturability, low current operation and array integrability. As data rates continue to increase, VCSELs offer the advantage of being able to provide the highest modulation bandwidth per milliamp of modulation current. Currently, most of the VCSEL-based products use short (780 - 980 nm) wavelength lasers. However, significant research efforts are taking place at universities and industrial research labs around the world to develop reliable, manufacturable and high-power long (1300 - 1550 nm) wavelength VCSELs. These lasers will allow longer (several km) transmission distances and will help alleviate some of the eye-safety issues. Perhaps, the most important advantage of VCSELs is the ability to form two-dimensional arrays much easier than in the case of edge-emitting lasers. These arrays (single and two-dimensional) will allow a whole new family of applications, specifically in very high-speed computer and switch interconnects.

  8. Integrated Optoelectronic Networks for Application-Driven Multicore Computing

    Science.gov (United States)

    2017-05-08

    AFRL-AFOSR-VA-TR-2017-0102 Integrated Optoelectronic Networks for Application- Driven Multicore Computing Sudeep Pasricha COLORADO STATE UNIVERSITY...AND SUBTITLE Integrated Optoelectronic Networks for Application-Driven Multicore Computing 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-13-1-0110 5c...and supportive materials with innovative architectural designs that integrate these components according to system-wide application needs. 15

  9. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    Science.gov (United States)

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  10. Software for Use with Optoelectronic Measuring Tool

    Science.gov (United States)

    Ballard, Kim C.

    2004-01-01

    A computer program has been written to facilitate and accelerate the process of measurement by use of the apparatus described in "Optoelectronic Tool Adds Scale Marks to Photographic Images" (KSC-12201). The tool contains four laser diodes that generate parallel beams of light spaced apart at a known distance. The beams of light are used to project bright spots that serve as scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The computer program is applicable to a scene that contains the laser spots and that has been imaged in a square pixel format that can be imported into a graphical user interface (GUI) generated by the program. It is assumed that the laser spots and the distance(s) to be measured all lie in the same plane and that the plane is perpendicular to the line of sight of the camera used to record the image

  11. Review of Interconnection Practices and Costs in the Western States

    Energy Technology Data Exchange (ETDEWEB)

    Bird, Lori A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Flores-Espino, Francisco [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Volpi, Christina M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Ardani, Kristen B [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Manning, David [Western Interstate Energy Board (WIEB); McAllister, Richard [Western Interstate Energy Board (WIEB)

    2018-04-27

    The objective of this report is to evaluate the nature of barriers to interconnecting distributed PV, assess costs of interconnection, and compare interconnection practices across various states in the Western Interconnection. The report addresses practices for interconnecting both residential and commercial-scale PV systems to the distribution system. This study is part of a larger, joint project between the Western Interstate Energy Board (WIEB) and the National Renewable Energy Laboratory (NREL), funded by the U.S. Department of Energy, to examine barriers to distributed PV in the 11 states wholly within the Western Interconnection.

  12. Photonic Structure-Integrated Two-Dimensional Material Optoelectronics

    Directory of Open Access Journals (Sweden)

    Tianjiao Wang

    2016-12-01

    Full Text Available The rapid development and unique properties of two-dimensional (2D materials, such as graphene, phosphorene and transition metal dichalcogenides enable them to become intriguing candidates for future optoelectronic applications. To maximize the potential of 2D material-based optoelectronics, various photonic structures are integrated to form photonic structure/2D material hybrid systems so that the device performance can be manipulated in controllable ways. Here, we first introduce the photocurrent-generation mechanisms of 2D material-based optoelectronics and their performance. We then offer an overview and evaluation of the state-of-the-art of hybrid systems, where 2D material optoelectronics are integrated with photonic structures, especially plasmonic nanostructures, photonic waveguides and crystals. By combining with those photonic structures, the performance of 2D material optoelectronics can be further enhanced, and on the other side, a high-performance modulator can be achieved by electrostatically tuning 2D materials. Finally, 2D material-based photodetector can also become an efficient probe to learn the light-matter interactions of photonic structures. Those hybrid systems combine the advantages of 2D materials and photonic structures, providing further capacity for high-performance optoelectronics.

  13. Report on achievements in fiscal 1998. Development of technologies to put photovoltaic power generation systems into practical use - Demonstrative research on photovoltaic power generation system (Study on grid interconnection technique for dispersed photovoltaic systems under high-density connection); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyoko hatsuden system no jissho kenkyu (komitsudo renkei gijutsu no kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Interconnecting photovoltaic systems with power transmission systems under high density affects power quality, protection, maintenance and stability of the transmission lines. As measures to deal with this issue, investigations are being made on (1) elucidation of effects imposed on transmission lines, (2) establishment of countermeasure technologies, and (3) technological options leading to higher value addition. In Item (1), with an objective to identify the current status, evaluations were given on prevention of independent operation of commercially available inverters, and on their stabilizing performance against system fluctuation. The evaluations were performed by conducting a test for multiple unit operation in parallel and a single unit performance test. The test result indicated that, while the prevention performance can be satisfied, maloperation has occurred frequently due to the system fluctuation, and that voltage rise due to the inverter was suppressed effectively by using the simultaneous control of active and reactive powers. In Item (2), a demonstration test was launched on an inverter incorporating a new prevention device. The effective means to suppress voltage rise in the high-voltage power transmission lines is the discrete voltage suppression by controlling reactive power. In addition, a proposal was made on a new voltage and phase detection method that can be used at short circuit of the high-voltage transmission lines. In Item (3), having a photovoltaic system contain a small size batteries was found effective in suppressing the power generation output variation, and in smoothing the loads. (NEDO)

  14. Impact of Bundle Structure on Performance of on-Chip CNT Interconnects

    International Nuclear Information System (INIS)

    Kuruvilla, N.; Raina, J.P

    2014-01-01

    CNTs are proposed as a promising candidate against copper in deep submicron IC interconnects. Still this technology is in its infancy. Most available literatures on performance predictions of CNT interconnects, have focused only on interconnect geometries using segregated CNTs. Yet during the manufacturing phase, CNTs are obtained usually as a mixture of single-walled and multi-walled CNTs (SWCNTs and MWCNTs). Especially in case of SWCNTs; it is usually available as a mixture of both Semi conducting CNTs and metallic CNTs. This paper attempts to answer whether segregation is inevitable before using them to construct interconnects. This paper attempt to compare the performance variations of bundled CNT interconnects, where bundles are made of segregated CNTs versus mixed CNTs, for future technology nodes using electrical model based analysis. Also a proportionate mixing of different CNTs has been introduced so as to yield a set of criteria to aid the industry in selection of an appropriate bundle structure for use in a specific application with optimum performance. It was found that even the worst case performance of geometries using a mixture of SWCNTs and MWCNTs was better than copper. These results also reveal that, for extracting optimum performance vide cost matrix, the focus should be more on diameter controlled synthesis than on segregation.

  15. Toward high-resolution optoelectronic retinal prosthesis

    Science.gov (United States)

    Palanker, Daniel; Huie, Philip; Vankov, Alexander; Asher, Alon; Baccus, Steven

    2005-04-01

    It has been already demonstrated that electrical stimulation of retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. Current retinal implants provide very low resolution (just a few electrodes), while several thousand pixels are required for functional restoration of sight. We present a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array with pixel density up to 2,500 pix/mm2 (geometrically corresponding to a visual acuity of 20/80), and allows for natural eye scanning rather than scanning with a head-mounted camera. The system operates similarly to "virtual reality" imaging devices used in military and medical applications. An image from a video camera is projected by a goggle-mounted infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. Such a system provides a broad field of vision by allowing for natural eye scanning. The goggles are transparent to visible light, thus allowing for simultaneous utilization of remaining natural vision along with prosthetic stimulation. Optical control of the implant allows for simple adjustment of image processing algorithms and for learning. A major prerequisite for high resolution stimulation is the proximity of neural cells to the stimulation sites. This can be achieved with sub-retinal implants constructed in a manner that directs migration of retinal cells to target areas. Two basic implant geometries are described: perforated membranes and protruding electrode arrays. Possibility of the tactile neural stimulation is also examined.

  16. National Offshore Wind Energy Grid Interconnection Study Executive Summary

    Energy Technology Data Exchange (ETDEWEB)

    Daniel, John P. [ABB, Inc., Cary, NC (United States); Liu, Shu [ABB, Inc., Cary, NC (United States); Ibanez, Eduardo [National Renewable Energy Lab. (NREL), Golden, CO (United States); Pennock, Ken [AWS Truepower, Albany, NY (United States); Reed, Gregory [Univ. of Pittsburgh, PA (United States); Hanes, Spencer [Duke Energy, Charlotte, NC (United States)

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States.

  17. National Offshore Wind Energy Grid Interconnection Study Full Report

    Energy Technology Data Exchange (ETDEWEB)

    Daniel, John P. [ABB, Inc., Cary, NC (United States); Liu, Shu [ABB, Inc., Cary, NC (United States); Ibanez, Eduardo [National Renewable Energy Lab. (NREL), Golden, CO (United States); Pennock, Ken [AWS Truepower, Albany, NY (United States); Reed, Gregory [Univ. of Pittsburgh, PA (United States); Hanes, Spencer [Duke Energy, Charlotte, NC (United States)

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States.

  18. 2D and 3D interconnect fabrication by picosecond Laser Induced Forward Transfer

    NARCIS (Netherlands)

    Oosterhuis, G.; Huis in 't veld, A.J.; Chall, P.

    2011-01-01

    Interconnects are an important cost driver in advanced 3D chip packaging. This holds for Through Silicon Vias (TSV) for chip stacking, but also for other integrated Si-technology. Especially in applications with a low number (<100 mm-2) of relatively large (10-2- um diameter), high aspect ratio

  19. Characterization of a Cobalt-Tungsten Interconnect

    DEFF Research Database (Denmark)

    Harthøj, Anders; Holt, Tobias; Caspersen, Michael

    2012-01-01

    is to act both as a diffusion barrier for chromium and provide better protection against high temperature oxidation than a pure cobalt coating. This work presents a characterization of a cobalt-tungsten alloy coating electrodeposited on the ferritic steel Crofer 22 H which subsequently was oxidized in air......A ferritic steel interconnect for a solid oxide fuel cell must be coated in order to prevent chromium evaporation from the steel substrate. The Technical University of Denmark and Topsoe Fuel Cell have developed an interconnect coating based on a cobalt-tungsten alloy. The purpose of the coating...... for 300 h at 800 °C. The coating was characterized with Glow Discharge Optical Spectroscopy (GDOES), Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD). The oxidation properties were evaluated by measuring weight change of coated samples of Crofer 22 H and Crofer 22 APU as a function...

  20. Interconnection of bundled solid oxide fuel cells

    Science.gov (United States)

    Brown, Michael; Bessette, II, Norman F; Litka, Anthony F; Schmidt, Douglas S

    2014-01-14

    A system and method for electrically interconnecting a plurality of fuel cells to provide dense packing of the fuel cells. Each one of the plurality of fuel cells has a plurality of discrete electrical connection points along an outer surface. Electrical connections are made directly between the discrete electrical connection points of adjacent fuel cells so that the fuel cells can be packed more densely. Fuel cells have at least one outer electrode and at least one discrete interconnection to an inner electrode, wherein the outer electrode is one of a cathode and and anode and wherein the inner electrode is the other of the cathode and the anode. In tubular solid oxide fuel cells the discrete electrical connection points are spaced along the length of the fuel cell.

  1. Copper Nanowire Production for Interconnect Applications

    Science.gov (United States)

    Han, Jin-Woo (Inventor); Meyyappan, Meyya (Inventor)

    2014-01-01

    A method of fabricating metallic Cu nanowires with lengths up to about 25 micrometers and diameters in a range 20-100 nanometers, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 micrometers), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nanometers. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).

  2. Architecture for on-die interconnect

    Science.gov (United States)

    Khare, Surhud; More, Ankit; Somasekhar, Dinesh; Dunning, David S.

    2016-03-15

    In an embodiment, an apparatus includes: a plurality of islands configured on a semiconductor die, each of the plurality of islands having a plurality of cores; and a plurality of network switches configured on the semiconductor die and each associated with one of the plurality of islands, where each network switch includes a plurality of output ports, a first set of the output ports are each to couple to the associated network switch of an island via a point-to-point interconnect and a second set of the output ports are each to couple to the associated network switches of a plurality of islands via a point-to-multipoint interconnect. Other embodiments are described and claimed.

  3. Interconnection of psychology, color and design

    OpenAIRE

    Minchuk, A. M.; Kudryashova, Aleksandra Vladimirovna

    2016-01-01

    The paper presents the direct interconnection between color, design and psychology on the basis of theoretical and historical analysis. It describes the peculiarities of how peopleperceive color. In the paper some of the historical details concerning the way our ancestors used color are presented and the modern scientific discoveries in the field of psychology, which give the evidence of the great psychological, emotional and physical influence of color on a person are shown as well. The pape...

  4. Computer simulation of electromigration in microelectronics interconnect

    OpenAIRE

    Zhu, Xiaoxin

    2014-01-01

    Electromigration (EM) is a phenomenon that occurs in metal conductor carrying high density electric current. EM causes voids and hillocks that may lead to open or short circuits in electronic devices. Avoiding these failures therefore is a major challenge in semiconductor device and packaging design and manufacturing, and it will become an even greater challenge for the semiconductor assembly and packaging industry as electronics components and interconnects get smaller and smaller. According...

  5. Viewing Integrated-Circuit Interconnections By SEM

    Science.gov (United States)

    Lawton, Russel A.; Gauldin, Robert E.; Ruiz, Ronald P.

    1990-01-01

    Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.

  6. The first LHC sector is fully interconnected

    CERN Multimedia

    2006-01-01

    Sector 7-8 is the first sector of the LHC to become fully operational. All the magnets, cryogenic line, vacuum chambers and services are interconnected. The cool down of this sector can soon commence. LHC project leader Lyn Evans, the teams from CERN's AT/MCS, AT/VAC and AT/MEL groups, and the members of the IEG consortium celebrate the completion of the first LHC sector. The 10th of November was a red letter day for the LHC accelerator teams, marking the completion of the first sector of the machine. The magnets of sector 7-8, together with the cryogenic line, the vacuum chambers and the distribution feedboxes (DFBs) are now all completely interconnected. Sector 7-8 has thus been closed and is the first LHC sector to become operational. The interconnection work required several thousand electrical, cryogenic and insulating connections to be made on the 210 interfaces between the magnets in the arc, the 30 interfaces between the special magnets and the interfaces with the cryogenic line. 'This represent...

  7. Implementation of interconnect simulation tools in spice

    Science.gov (United States)

    Satsangi, H.; Schutt-Aine, J. E.

    1993-01-01

    Accurate computer simulation of high speed digital computer circuits and communication circuits requires a multimode approach to simulate both the devices and the interconnects between devices. Classical circuit analysis algorithms (lumped parameter) are needed for circuit devices and the network formed by the interconnected devices. The interconnects, however, have to be modeled as transmission lines which incorporate electromagnetic field analysis. An approach to writing a multimode simulator is to take an existing software package which performs either lumped parameter analysis or field analysis and add the missing type of analysis routines to the package. In this work a traditionally lumped parameter simulator, SPICE, is modified so that it will perform lossy transmission line analysis using a different model approach. Modifying SPICE3E2 or any other large software package is not a trivial task. An understanding of the programming conventions used, simulation software, and simulation algorithms is required. This thesis was written to clarify the procedure for installing a device into SPICE3E2. The installation of three devices is documented and the installations of the first two provide a foundation for installation of the lossy line which is the third device. The details of discussions are specific to SPICE, but the concepts will be helpful when performing installations into other circuit analysis packages.

  8. The variability of interconnected wind plants

    International Nuclear Information System (INIS)

    Katzenstein, Warren; Fertig, Emily; Apt, Jay

    2010-01-01

    We present the first frequency-dependent analyses of the geographic smoothing of wind power's variability, analyzing the interconnected measured output of 20 wind plants in Texas. Reductions in variability occur at frequencies corresponding to times shorter than ∼24 h and are quantified by measuring the departure from a Kolmogorov spectrum. At a frequency of 2.8x10 -4 Hz (corresponding to 1 h), an 87% reduction of the variability of a single wind plant is obtained by interconnecting 4 wind plants. Interconnecting the remaining 16 wind plants produces only an additional 8% reduction. We use step change analyses and correlation coefficients to compare our results with previous studies, finding that wind power ramps up faster than it ramps down for each of the step change intervals analyzed and that correlation between the power output of wind plants 200 km away is half that of co-located wind plants. To examine variability at very low frequencies, we estimate yearly wind energy production in the Great Plains region of the United States from automated wind observations at airports covering 36 years. The estimated wind power has significant inter-annual variability and the severity of wind drought years is estimated to be about half that observed nationally for hydroelectric power.

  9. Review of Microwave Photonics Technique to Generate the Microwave Signal by Using Photonics Technology

    Science.gov (United States)

    Raghuwanshi, Sanjeev Kumar; Srivastav, Akash

    2017-12-01

    Microwave photonics system provides high bandwidth capabilities of fiber optic systems and also contains the ability to provide interconnect transmission properties, which are virtually independent of length. The low-loss wide bandwidth capability of optoelectronic systems makes them attractive for the transmission and processing of microwave signals, while the development of high-capacity optical communication systems has required the use of microwave techniques in optical transmitters and receivers. These two strands have led to the development of the research area of microwave photonics. So, we can considered microwave photonics as the field that studies the interaction between microwave and optical waves for applications such as communications, radars, sensors and instrumentations. In this paper we have thoroughly reviewed the microwave generation techniques by using photonics technology.

  10. Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects.

    Science.gov (United States)

    Jeon, Sanghun; Song, Ihun; Lee, Sungsik; Ryu, Byungki; Ahn, Seung-Eon; Lee, Eunha; Kim, Young; Nathan, Arokia; Robertson, John; Chung, U-In

    2014-11-05

    A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Incorporation of in-plane interconnects to reflow bonding for electrical functionality

    International Nuclear Information System (INIS)

    Moğulkoç, B; Jansen, H V; Ter Brake, H J M; Elwenspoek, M C

    2011-01-01

    Incorporation of in-plane electrical interconnects to reflow bonding is studied to provide electrical functionality to lab-on-a-chip or microfluidic devices. Reflow bonding is the packaging technology, in which glass tubes are joined to silicon substrates at elevated temperatures. The tubes are used to interface the silicon-based fluidic devices and are directly compatible with standard Swagelok® connectors. After the bonding, the electrically conductive lines will allow probing into the volume confined by the tube, where the fluidic device operates. Therefore methods for fabricating electrical interconnects that survive the bonding procedure at elevated temperature and do not alter the properties of the bond interface are investigated

  12. Energetic diversification in the interconnected electric system

    International Nuclear Information System (INIS)

    Villanueva M, C.; Beltran M, H.; Serrano G, J.A.

    2007-01-01

    In the interconnected electric system of Mexico the demanded electricity in different timetable periods it is synthesized in the annual curve of load duration, which is characterized by three regions. The energy in every period is quantified according to the under curve areas in each region, which depend of the number of hours in that the power demand exceeds the minimum and the intermediate demands respectively that are certain percentages of the yearly maximum demand. In that context, the generating power stations are dispatched according to the marginal costs of the produced electricity and the electric power to be generated every year by each type of central it is located in some of the regions of the curve of load duration, as they are their marginal costs and their operation characteristic techniques. By strategic reasons it is desirable to diversify the primary energy sources that are used in the national interconnected system to generate the electricity that demand the millions of consumers that there are in Mexico. On one hand, when intensifying the use of renewable sources and of nucleo electric centrals its decrease the import volumes of natural gas, which has very volatile prices and it is a fuel when burning in the power stations produces hothouse gases that are emitted to the atmosphere. On the other hand, when diversifying the installed capacity of the different central types in the interconnected system, a better adaptation of the produced electricity volumes is achieved by each type to the timetable variation, daily, weekly and seasonal of the electric demand, as one manifests this in the curve of load duration. To exemplify a possible diversification plan of the installed capacity in the national interconnected system that includes nucleo electric centrals and those that use renewable energy, charts are presented that project of 2005 at 2015 the capacity, energy and ost of the electricity of different central types, located in each one of the

  13. A Methodology for Physical Interconnection Decisions of Next Generation Transport Networks

    DEFF Research Database (Denmark)

    Gutierrez Lopez, Jose Manuel; Riaz, M. Tahir; Madsen, Ole Brun

    2011-01-01

    of possibilities when designing the physical network interconnection. This paper develops and presents a methodology in order to deal with aspects related to the interconnection problem of optical transport networks. This methodology is presented as independent puzzle pieces, covering diverse topics going from......The physical interconnection for optical transport networks has critical relevance in the overall network performance and deployment costs. As telecommunication services and technologies evolve, the provisioning of higher capacity and reliability levels is becoming essential for the proper...... development of Next Generation Networks. Currently, there is a lack of specific procedures that describe the basic guidelines to design such networks better than "best possible performance for the lowest investment". Therefore, the research from different points of view will allow a broader space...

  14. Examination of Critical Length Effect in Copper Interconnects With Oxide and Low-k Dielectrics

    International Nuclear Information System (INIS)

    Thrasher, Stacye; Gall, Martin; Justison, Patrick; Hernandez, Richard; Kawasaki, Hisao; Capasso, Cristiano; Nguyen, Timothy

    2004-01-01

    As technology moves toward faster microelectronic devices with smaller feature sizes, copper is replacing aluminum-copper alloy and low-k dielectric is replacing oxide as the materials of choice for advanced interconnect integrations. Copper not only brings to the table the advantage of lower resistivity, but also exhibits better electromigration performance when compared to Al(Cu). Low-k dielectric materials are advantageous because they reduce power consumption and improve signal delay. Due to these advantages, the industry trend is moving towards integrating copper and low-k dielectric for high performance interconnects. The purpose of this study is to evaluate the critical length effect in single-inlaid copper interconnects and determine the critical product (jl)c, for a variety of integrations, examining the effect of ILD (oxide vs. low-k), geometry, and stress temperature

  15. Traffic Load on Interconnection Lines of Generalized Double Ring Network Structures

    DEFF Research Database (Denmark)

    Pedersen, Jens Myrup; Riaz, Muhammad Tahir; Madsen, Ole Brun

    2004-01-01

    Generalized Double Ring (N2R) network structures possess a number of good properties, but being not planar they are hard to physically embed in communication networks. However, if some of the lines, the interconnection lines, are implemented by wireless technologies, the remaining structure...... consists of two planar rings, which are easily embedded by fiber or other wired solutions. It is shown that for large N2R structures, the interconnection lines carry notably lower loads than the other lines if shortest-path routing is used, and the effects of two other routing schemes are explored, leading...... to lower load on interconnection lines at the price of larger efficient average distance and diameter....

  16. Analysis of the trade-offs between conventional and superconducting interconnections

    International Nuclear Information System (INIS)

    Frye, R.

    1989-01-01

    Superconductivity can now be achieved at temperatures compatible with semiconductor device operation. This raises the interesting possibility of using the new, high-temperature superconducting ceramics for interconnections in electronic systems. This paper examines some of the consequences of a resistance-free interconnection medium. A problem with conventional conductors in electronic systems is that the resistance of wires increases quadratically as the wire dimensions are scaled down. Below some minimum cross-sectional area, determined by the metal resistivity and wire length, the resistance in these lines begins to severely limit their bandwidth. Superconductors, on the other hand, are not constrained by the same scaling rules. They provide a high bandwidth interconnection at all sizes and lengths. The limitations for superconductors are set by their critical current densities. If line dimensions become too small, a superconductor will no longer support an adequate flow of current. An analysis is presented examining the performance trade-offs for conventional and superconducting interconnections in applications ranging from printed wiring boards to chips. For most semiconductor device-based applications, the potential gains in wiring density offered by superconductors are probably more important than the bandwidth improvements. An important result of the analysis is that it determines the values of critical current density above which superconductors outperform conventional wires in systems of various physical sizes. This identifies particular interconnection technologies for which high-temperature superconductors show the most promise

  17. Economic and environmental benefits of interconnected systems. The Spanish example

    International Nuclear Information System (INIS)

    Chicharro, A.S.; Dios Alija, R. de

    1996-01-01

    The interconnected systems provide large technical and economic benefits which, evaluated and contrasted with the associated network investment cost, usually produce important net savings. There are continental electrical systems formed by many interconnected subsystems. The optimal size of an interconnection should be defined within an economic background. It is necessary to take into account the global environmental effects. The approach and results of studies carried out by Red Electrica is presented, in order to analyse both economic and environmental benefits resulting from an increase in the present Spanish interconnection capacities. From both economic and environmental points of view, the development of the interconnected systems is highly positive. (author)

  18. Contrast image formation based on thermodynamic approach and surface laser oxidation process for optoelectronic read-out system

    Science.gov (United States)

    Scherbak, Aleksandr; Yulmetova, Olga

    2018-05-01

    A pulsed fiber laser with the wavelength 1.06 μm was used to treat titanium nitride film deposited on beryllium substrates in the air with intensities below an ablation threshold to provide oxide formation. Laser oxidation results were predicted by the chemical thermodynamic method and confirmed by experimental techniques (X-ray diffraction). The developed technology of contrast image formation is intended to be used for optoelectronic read-out system.

  19. Practical opto-electronics an illustrated guide for the laboratory

    CERN Document Server

    Protopopov, Vladimir

    2014-01-01

    This book explains how to create opto-electronic systems in a most efficient way, avoiding typical mistakes. It covers light detection techniques, imaging, interferometry, spectroscopy, modulation-demodulation, heterodyning, beam steering, and many other topics common to laboratory applications. The focus is made on self-explanatory figures rather than on words. The book guides the reader through the entire process of creating problem-specific opto-electronic systems, starting from optical source, through beam transportation optical arrangement, to photodetector and data acquisition system. The relevant basics of beam propagation and computer-based raytracing routines are also explained, and sample codes are listed. the book teaches important know-how and practical tricks that are never disclosed in scientific publications.  The book can become the reader's personal adviser in the world of opto-electronics and navigator in the ocean of the market of optical components and systems. Succinct, well-illustrate...

  20. Crosstalk in modern on-chip interconnects a FDTD approach

    CERN Document Server

    Kaushik, B K; Patnaik, Amalendu

    2016-01-01

    The book provides accurate FDTD models for on-chip interconnects, covering most recent advancements in materials and design. Furthermore, depending on the geometry and physical configurations, different electrical equivalent models for CNT and GNR based interconnects are presented. Based on the electrical equivalent models the performance comparison among the Cu, CNT and GNR-based interconnects are also discussed in the book. The proposed models are validated with the HSPICE simulations. The book introduces the current research scenario in the modeling of on-chip interconnects. It presents the structure, properties, and characteristics of graphene based on-chip interconnects and the FDTD modeling of Cu based on-chip interconnects. The model considers the non-linear effects of CMOS driver as well as the transmission line effects of interconnect line that includes coupling capacitance and mutual inductance effects. In a more realistic manner, the proposed model includes the effect of width-dependent MFP of the ...

  1. Carbon nanotubes for interconnects process, design and applications

    CERN Document Server

    Dijon, Jean; Maffucci, Antonio

    2017-01-01

    This book provides a single-source reference on the use of carbon nanotubes (CNTs) as interconnect material for horizontal, on-chip and 3D interconnects. The authors demonstrate the uses of bundles of CNTs, as innovative conducting material to fabricate interconnect through-silicon vias (TSVs), in order to improve the performance, reliability and integration of 3D integrated circuits (ICs). This book will be first to provide a coherent overview of exploiting carbon nanotubes for 3D interconnects covering aspects from processing, modeling, simulation, characterization and applications. Coverage also includes a thorough presentation of the application of CNTs as horizontal on-chip interconnects which can potentially revolutionize the nanoelectronics industry. This book is a must-read for anyone interested in the state-of-the-art on exploiting carbon nanotubes for interconnects for both 2D and 3D integrated circuits. Provides a single-source reference on carbon nanotubes for interconnect applications; Includes c...

  2. Decentralised output feedback control of Markovian jump interconnected systems with unknown interconnections

    Science.gov (United States)

    Li, Li-Wei; Yang, Guang-Hong

    2017-07-01

    The problem of decentralised output feedback control is addressed for Markovian jump interconnected systems with unknown interconnections and general transition rates (TRs) allowed to be unknown or known with uncertainties. A class of decentralised dynamic output feedback controllers are constructed, and a cyclic-small-gain condition is exploited to dispose the unknown interconnections so that the resultant closed-loop system is stochastically stable and satisfies an H∞ performance. With slack matrices to cope with the nonlinearities incurred by unknown and uncertain TRs in control synthesis, a novel controller design condition is developed in linear matrix inequality formalism. Compared with the existing works, the proposed approach leads to less conservatism. Finally, two examples are used to illustrate the effectiveness of the new results.

  3. Interconnecting Multidiscilinary Data Infrastructures: From Federation to Brokering Framework

    Science.gov (United States)

    Nativi, S.

    2014-12-01

    Standardization and federation activities have been played an essential role to push interoperability at the disciplinary and cross-disciplinary level. However, they demonstrated not to be sufficient to resolve important interoperability challenges, including: disciplinary heterogeneity, cross-organizations diversities, cultural differences. Significant international initiatives like GEOSS, IODE, and CEOS demonstrated that a federation system dealing with global and multi-disciplinary domain turns out to be rater complex, raising more the already high entry level barriers for both Providers and Users. In particular, GEOSS demonstrated that standardization and federation actions must be accompanied and complemented by a brokering approach. Brokering architecture and its implementing technologies are able to implement an effective interoperability level among multi-disciplinary systems, lowering the entry level barriers for both data providers and users. This presentation will discuss the brokering philosophy as a complementary approach for standardization and federation to interconnect existing and heterogeneous infrastructures and systems. The GEOSS experience will be analyzed, specially.

  4. Interconnected magnetic tunnel junctions for spin-logic applications

    Science.gov (United States)

    Manfrini, Mauricio; Vaysset, Adrien; Wan, Danny; Raymenants, Eline; Swerts, Johan; Rao, Siddharth; Zografos, Odysseas; Souriau, Laurent; Gavan, Khashayar Babaei; Rassoul, Nouredine; Radisic, Dunja; Cupak, Miroslav; Dehan, Morin; Sayan, Safak; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.; Mocuta, Dan; Radu, Iuliana P.

    2018-05-01

    With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wall-based logic technology.

  5. Fixed Orientation Interconnection Problems: Theory, Algorithms and Applications

    DEFF Research Database (Denmark)

    Zachariasen, Martin

    Interconnection problems have natural applications in the design of integrated circuits (or chips). A modern chip consists of billions of transistors that are connected by metal wires on the surface of the chip. These metal wires are routed on a (fairly small) number of layers in such a way...... that electrically independent nets do not intersect each other. Traditional manufacturing technology limits the orientations of the wires to be either horizontal or vertical — and is known as Manhattan architecture. Over the last decade there has been a growing interest in general architectures, where more than two...... a significant step forward, both concerning theory and algorithms, for the fixed orientation Steiner tree problem. In addition, the work maintains a close link to applications and generalizations motivated by chip design....

  6. Two component micro injection moulding for moulded interconnect devices

    DEFF Research Database (Denmark)

    Islam, Aminul

    2008-01-01

    Moulded interconnect devices (MIDs) contain huge possibilities for many applications in micro electro-mechanical-systems because of their capability of reducing the number of components, process steps and finally in miniaturization of the product. Among the available MID process chains, two...... component injection moulding is one of the most industrially adaptive processes. However, the use of two component injection moulding for MID fabrication, with circuit patterns in the sub-millimeter range, is still a big challenge at the present state of technology. The scope of the current Ph.D. project...... and a reasonable adhesion between them. • Selective metallization of the two component plastic part (coating one polymer with metal and leaving the other one uncoated) To overcome these two main issues in MID fabrication for micro applications, the current Ph.D. project explores the technical difficulties...

  7. Modelling of optoelectronic circuits based on resonant tunneling diodes

    Science.gov (United States)

    Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

    2017-08-01

    Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

  8. Optoelectronic devices product assurance guideline for space application

    Science.gov (United States)

    Bensoussan, A.; Vanzi, M.

    2017-11-01

    New opportunities are emerging for the implementation of hardware sub-systems based on OptoElectronic Devices (OED) for space application. Since the end of this decade the main players for space systems namely designers and users including Industries, Agencies, Manufacturers and Laboratories are strongly demanding of adequate strategies to qualify and validate new optoelectronics products and sub-systems [1]. The long term space application mission will require to address either inter-satellite link (free space communication, positioning systems, tracking) or intra-satellite connectivity/flexibility/reconfigurability or high volume of data transfer between equipment installed into payload.

  9. High bandgap III-V alloys for high efficiency optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  10. Environmental Regulation Impacts on Eastern Interconnection Performance

    Energy Technology Data Exchange (ETDEWEB)

    Markham, Penn N [ORNL; Liu, Yilu [ORNL; Young II, Marcus Aaron [ORNL

    2013-07-01

    In the United States, recent environmental regulations will likely result in the removal of nearly 30 GW of oil and coal-fired generation from the power grid, mostly in the Eastern Interconnection (EI). The effects of this transition on voltage stability and transmission line flows have previously not been studied from a system-wide perspective. This report discusses the results of power flow studies designed to simulate the evolution of the EI over the next few years as traditional generation sources are replaced with environmentally friendlier ones such as natural gas and wind.

  11. Optical Interconnection Via Computer-Generated Holograms

    Science.gov (United States)

    Liu, Hua-Kuang; Zhou, Shaomin

    1995-01-01

    Method of free-space optical interconnection developed for data-processing applications like parallel optical computing, neural-network computing, and switching in optical communication networks. In method, multiple optical connections between multiple sources of light in one array and multiple photodetectors in another array made via computer-generated holograms in electrically addressed spatial light modulators (ESLMs). Offers potential advantages of massive parallelism, high space-bandwidth product, high time-bandwidth product, low power consumption, low cross talk, and low time skew. Also offers advantage of programmability with flexibility of reconfiguration, including variation of strengths of optical connections in real time.

  12. Interconnectivity and the Electronic Academic Library

    Directory of Open Access Journals (Sweden)

    Donald E. Riggs

    1988-03-01

    Full Text Available 無Due to the emphasis on the use of computing networks on campuses and to the very nature of more information being accessible to library users only via electronic means, we are witnessing a migration to electronic academic libraries. this new type of library is being required to have interconnections with the campus' other online information/data systems. Arizona State University libraries have been provided the opportunity to develop an electronic library that will be the focal point of a campus-wide information/data network.

  13. Electrical and optoelectronic properties of gallium nitride

    International Nuclear Information System (INIS)

    Flannery, Lorraine Barbara

    2002-01-01

    substrates using the CARS25 RF source. The chemical concentration of Mg, [Mg] and the hole density, p H were found to increase both with layer thickness and Mg cell temperature in material grown at 700 deg C. A maximum free hole density, p H and mobility, μ H of 4.8 x 10 17 cm -3 and 10.7 cm 2 V -1 s -1 respectively were obtained for a 2.1 μm layer grown at a Mg cell temperature of 507 deg C. Photoconductive UV detectors were successfully fabricated from the highest quality n and p-type GaN layers grown by MBE on sapphire substrates. The p-type UV devices represented the first Mg doped p-type GaN based UV photoconductive detectors grown on sapphire substrates produced by the MBE growth method. The performances of both the n and p-type detectors were assessed by measurement of their optoelectronic and electrical properties and some conclusions were drawn regarding their operating principles. (author)

  14. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2012-10-30

    ... Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Institution... certain optoelectronic devices for fiber optic communications, components thereof, and products containing... optoelectronic devices for fiber optic communications, components thereof, and products containing the same that...

  15. Installation and Quality Assurance of the Interconnections between Cryo-assemblies of the LHC Long Straight Sections

    CERN Document Server

    Garion, C; Tock, J P

    2006-01-01

    The interconnections between the cryomagnets and cryogenic utilities in the LHC long Straight Sections constitute the last machine installation activity. They are ensuring continuity of the beam and insulation vacuum systems, cryogenic fluid and electrical circuits and thermal insulation. The assembly is carried out in a constraining tunnel environment with restricted space. Therefore, the assembly sequence has to be well defined and specific tests have to be performed during the interconnection work to secure the reliability of the system and thus to ensure the global accelerator availability. The LHC has 8 long straight insertion zones composed of special cryomagnets involving specific interconnection procedures and QA plans. The aim of this paper is to present the installation and quality assurance procedures implemented for the LHC LSS interconnections. Technologies such as manual and automatic welding and resistive soldering will be described as well as the different quality controls, such as visual and ...

  16. Analysis of the frontier technology of agricultural IoT and its predication research

    Science.gov (United States)

    Han, Shuqing; Zhang, Jianhua; Zhu, Mengshuai; Wu, Jianzhai; Shen, Chen; Kong, Fantao

    2017-09-01

    Agricultural IoT (Internet of Things) develops rapidly. Nanotechnology, biotechnology and optoelectronic technology are successfully integrated into the agricultural sensor technology. Big data, cloud computing and artificial intelligence technology have also been successfully used in IoT. This paper carries out the research on integration of agricultural sensor technology, nanotechnology, biotechnology and optoelectronic technology and the application of big data, cloud computing and artificial intelligence technology in agricultural IoT. The advantages and development of the integration of nanotechnology, biotechnology and optoelectronic technology with agricultural sensor technology were discussed. The application of big data, cloud computing and artificial intelligence technology in IoT and their development trend were analysed.

  17. Investigation and experimental validation of the contribution of optical interconnects in the SYMPHONIE massively parallel computer

    International Nuclear Information System (INIS)

    Scheer, Patrick

    1998-01-01

    Progress in microelectronics lead to electronic circuits which are increasingly integrated, with an operating frequency and an inputs/outputs count larger than the ones supported by printed circuit board and back-plane technologies. As a result, distributed systems with several boards cannot fully exploit the performance of integrated circuits. In synchronous parallel computers, the situation is worsen since the overall system performances rely on the efficiency of electrical interconnects between the integrated circuits which include the processing elements (PE). The study of a real parallel computer named SYMPHONIE shows for instance that the system operating frequency is far smaller than the capabilities of the microelectronics technology used for the PE implementation. Optical interconnections may cancel these limitations by providing more efficient connections between the PE. Especially, free-space optical interconnections based on vertical-cavity surface-emitting lasers (VCSEL), micro-lens and PIN photodiodes are compatible with the required features of the PE communications. Zero bias modulation of VCSEL with CMOS-compatible digital signals is studied and experimentally demonstrated. A model of the propagation of truncated gaussian beams through micro-lenses is developed. It is then used to optimise the geometry of the detection areas. A dedicated mechanical system is also proposed and implemented for integrating free-space optical interconnects in a standard electronic environment, representative of the one of parallel computer systems. A specially designed demonstrator provides the experimental validation of the above physical concepts. (author) [fr

  18. Thermoelectric Coolers with Sintered Silver Interconnects

    Science.gov (United States)

    Kähler, Julian; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2014-06-01

    The fabrication and performance of a sintered Peltier cooler (SPC) based on bismuth telluride with sintered silver interconnects are described. Miniature SPC modules with a footprint of 20 mm2 were assembled using pick-and-place pressure-assisted silver sintering at low pressure (5.5 N/mm2) and moderate temperature (250°C to 270°C). A modified flip-chip bonder combined with screen/stencil printing for paste transfer was used for the pick-and-place process, enabling high positioning accuracy, easy handling of the tiny bismuth telluride pellets, and immediate visual process control. A specific contact resistance of (1.4 ± 0.1) × 10-5 Ω cm2 was found, which is in the range of values reported for high-temperature solder interconnects of bismuth telluride pellets. The realized SPCs were evaluated from room temperature to 300°C, considerably outperforming the operating temperature range of standard commercial Peltier coolers. Temperature cycling capability was investigated from 100°C to 235°C over more than 200 h, i.e., 850 cycles, during which no degradation of module resistance or cooling performance occurred.

  19. Interconnected ponds operation for flood hazard distribution

    Science.gov (United States)

    Putra, S. S.; Ridwan, B. W.

    2016-05-01

    The climatic anomaly, which comes with extreme rainfall, will increase the flood hazard in an area within a short period of time. The river capacity in discharging the flood is not continuous along the river stretch and sensitive to the flood peak. This paper contains the alternatives on how to locate the flood retention pond that are physically feasible to reduce the flood peak. The flood ponds were designed based on flood curve number criteria (TR-55, USDA) with the aim of rapid flood peak capturing and gradual flood retuning back to the river. As a case study, the hydrologic condition of upper Ciliwung river basin with several presumed flood pond locations was conceptually designed. A fundamental tank model that reproducing the operation of interconnected ponds was elaborated to achieve the designed flood discharge that will flows to the downstream area. The flood hazard distribution status, as the model performance criteria, will be computed within Ciliwung river reach in Manggarai Sluice Gate spot. The predicted hazard reduction with the operation of the interconnected retention area result had been bench marked with the normal flow condition.

  20. Divergent synthesis and optoelectronic properties of oligodiacetylene building blocks

    NARCIS (Netherlands)

    Pilzak, G.S.; Lagen, van B.; Sudhölter, E.J.R.; Zuilhof, H.

    2008-01-01

    A new and divergent synthetic route to oligodiacetylene (ODA) building blocks has been developed via Sonogashira reactions under a reductive atmosphere. These central building blocks provide a new way for rapid preparation of long ODAs. In addition, we report on their optoelectronic properties which

  1. Electron microscopy study of advanced heterostructures for optoelectronics

    NARCIS (Netherlands)

    Katcki, J.; Ratajczak, J.; Phillipp, F.; Muszalski, J.; Bugajski, M.; Chen, J.X.; Fiore, A.

    2003-01-01

    The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots,

  2. Advances in wide bandgap SiC for optoelectronics

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    2014-01-01

    Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

  3. Strategic siting and regional grid interconnections key to low-carbon futures in African countries

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Grace C. [Univ. of California, Berkeley, CA (United States). Energy and Resources Group; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). International Energy Studies Group; Deshmukh, Ranjit [Univ. of California, Berkeley, CA (United States). Energy and Resources Group; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). International Energy Studies Group; Ndhlukula, Kudakwashe [Namibia Univ. of Science and Technology, Windhoek, (Namibia). Southern Africa Development Community (SADC) Centre for Renewable Energy and Energy Efficiency; Radojicic, Tijana [International Renewable Energy Agency, Masdar City, Abu Dhabi (United Arab Emirates); Reilly-Moman, Jessica [Univ. of California, Berkeley, CA (United States). Energy and Resources Group; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). International Energy Studies Group; Phadke, Amol [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). International Energy Studies Group; Kammen, Daniel M. [Univ. of California, Berkeley, CA (United States). Energy and Resources Group; Callaway, Duncan S. [Univ. of California, Berkeley, CA (United States). Energy and Resources Group

    2017-03-27

    Recent forecasts suggest that African countries must triple their current electricity generation by 2030. Our multicriteria assessment of wind and solar potential for large regions of Africa shows how economically competitive and low-environmental– impact renewable resources can significantly contribute to meeting this demand. We created the Multicriteria Analysis for Planning Renewable Energy (MapRE) framework to map and characterize solar and wind energy zones in 21 countries in the Southern African Power Pool (SAPP) and the Eastern Africa Power Pool (EAPP) and find that potential is several times greater than demand in many countries. Significant fractions of demand can be quickly served with “no-regrets” options—or zones that are low-cost, low-environmental impact, and highly accessible. Because no-regrets options are spatially heterogeneous, international interconnections are necessary to help achieve low-carbon development for the region as a whole, and interconnections that support the best renewable options may differ from those planned for hydropower expansion. Additionally, interconnections and selecting wind sites to match demand reduce the need for SAPP-wide conventional generation capacity by 9.5% in a high-wind scenario, resulting in a 6–20% cost savings, depending on the avoided conventional technology. Strategic selection of low-impact and accessible zones is more cost effective with interconnections compared with solutions without interconnections. In conclusion, the overall results are robust to multiple load growth scenarios. Together, results show that multicriteria site selection and deliberate planning of interconnections may significantly increase the economic and environmental competitiveness of renewable alternatives relative to conventional generation.

  4. Strategic siting and regional grid interconnections key to low-carbon futures in African countries.

    Science.gov (United States)

    Wu, Grace C; Deshmukh, Ranjit; Ndhlukula, Kudakwashe; Radojicic, Tijana; Reilly-Moman, Jessica; Phadke, Amol; Kammen, Daniel M; Callaway, Duncan S

    2017-04-11

    Recent forecasts suggest that African countries must triple their current electricity generation by 2030. Our multicriteria assessment of wind and solar potential for large regions of Africa shows how economically competitive and low-environmental-impact renewable resources can significantly contribute to meeting this demand. We created the Multicriteria Analysis for Planning Renewable Energy (MapRE) framework to map and characterize solar and wind energy zones in 21 countries in the Southern African Power Pool (SAPP) and the Eastern Africa Power Pool (EAPP) and find that potential is several times greater than demand in many countries. Significant fractions of demand can be quickly served with "no-regrets" options-or zones that are low-cost, low-environmental impact, and highly accessible. Because no-regrets options are spatially heterogeneous, international interconnections are necessary to help achieve low-carbon development for the region as a whole, and interconnections that support the best renewable options may differ from those planned for hydropower expansion. Additionally, interconnections and selecting wind sites to match demand reduce the need for SAPP-wide conventional generation capacity by 9.5% in a high-wind scenario, resulting in a 6-20% cost savings, depending on the avoided conventional technology. Strategic selection of low-impact and accessible zones is more cost effective with interconnections compared with solutions without interconnections. Overall results are robust to multiple load growth scenarios. Together, results show that multicriteria site selection and deliberate planning of interconnections may significantly increase the economic and environmental competitiveness of renewable alternatives relative to conventional generation.

  5. Latest generation interconnect technologies in APEnet+ networking infrastructure

    Science.gov (United States)

    Ammendola, Roberto; Biagioni, Andrea; Cretaro, Paolo; Frezza, Ottorino; Lo Cicero, Francesca; Lonardo, Alessandro; Martinelli, Michele; Stanislao Paolucci, Pier; Pastorelli, Elena; Rossetti, Davide; Simula, Francesco; Vicini, Piero

    2017-10-01

    In this paper we present the status of the 3rd generation design of the APEnet board (V5) built upon the 28nm Altera Stratix V FPGA; it features a PCIe Gen3 x8 interface and enhanced embedded transceivers with a maximum capability of 12.5Gbps each. The network architecture is designed in accordance to the Remote DMA paradigm. The APEnet+ V5 prototype is built upon the Stratix V DevKit with the addition of a proprietary, third party IP core implementing multi-DMA engines. Support for zero-copy communication is assured by the possibility of DMA-accessing either host and GPU memory, offloading the CPU from the chore of data copying. The current implementation plateaus to a bandwidth for memory read of 4.8GB/s. Here we describe the hardware optimization to the memory write process which relies on the use of two independent DMA engines and an improved TLB.

  6. Architectural improvements and technological enhancements for the APEnet+ interconnect system

    International Nuclear Information System (INIS)

    Ammendola, R.; Biagioni, A.; Frezza, O.; Lonardo, A.; Cicero, F. Lo; Martinelli, M.; Paolucci, P.S.; Pastorelli, E.; Simula, F.; Tosoratto, L.; Vicini, P.; Rossetti, D.

    2015-01-01

    The APEnet+ board delivers a point-to-point, low-latency, 3D torus network interface card. In this paper we describe the latest generation of APEnet NIC, APEnet v5, integrated in a PCIe Gen3 board based on a state-of-the-art, 28 nm Altera Stratix V FPGA. The NIC features a network architecture designed following the Remote DMA paradigm and tailored to tightly bind the computing power of modern GPUs to the communication fabric. For the APEnet v5 board we show characterizing figures as achieved bandwidth and BER obtained by exploiting new high performance ALTERA transceivers and PCIe Gen3 compliancy

  7. Plasma ash processing solutions for advanced interconnect technology

    International Nuclear Information System (INIS)

    Fuller, N.C.M.; Worsley, M.A.; Tai, L.; Bent, S.; Labelle, C.; Arnold, J.; Dalton, T.

    2008-01-01

    A mechanism for the modification of porous ultra low-k (ULK) and extreme ultra low-k (EULK) SiCOH-based materials is proposed. This is achieved by correlating film damage on a patterned structure measured by angular resolved x-ray photoelectron spectroscopy (ARXPS) with corresponding changes in reactive species radical density and ion current in the plasma measured by optical emission spectroscopy (OES), rare gas actinometry, and modeling. Line-to-line electrical leakage and capacitance data of nested line structures exposed to downstream ash plasmas suggest that other etching steps during back-end-of-the-line (BEOL) dual damascene processing are also critical for the overall modification induced to these materials

  8. Organic ferroelectric opto-electronic memories

    NARCIS (Netherlands)

    Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

    2011-01-01

    Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

  9. MEMS Integrated Submount Alignment for Optoelectronics

    Science.gov (United States)

    Shakespeare, W. Jeffrey; Pearson, Raymond A.; Grenestedt, Joachim L.; Hutapea, Parsaoran; Gupta, Vikas

    2005-02-01

    One of the most expensive and time-consuming production processes for single-mode fiber-optic components is the alignment of the photonic chip or waveguide to the fiber. The alignment equipment is capital intensive and usually requires trained technicians to achieve desired results. Current technology requires active alignment since tolerances are only ~0.2 μ m or less for a typical laser diode. This is accomplished using piezoelectric actuated stages and active optical feedback. Joining technologies such as soldering, epoxy bonding, or laser welding may contribute significant postbond shift, and final coupling efficiencies are often less than 80%. This paper presents a method of adaptive optical alignment to freeze in place directly on an optical submount using a microelectromechanical system (MEMS) shape memory alloy (SMA) actuation technology. Postbond shift is eliminated since the phase change is the alignment actuation. This technology is not limited to optical alignment but can be applied to a variety of MEMS actuations, including nano-actuation and nano-alignment for biomedical applications. Experimental proof-of-concept results are discussed, and a simple analytical model is proposed to predict the stress strain behavior of the optical submount. Optical coupling efficiencies and alignment times are compared with traditional processes. The feasibility of this technique in high-volume production is discussed.

  10. Reconfigurable Optical Interconnections Via Dynamic Computer-Generated Holograms

    Science.gov (United States)

    Liu, Hua-Kuang (Inventor); Zhou, Shao-Min (Inventor)

    1996-01-01

    A system is presented for optically providing one-to-many irregular interconnections, and strength-adjustable many-to-many irregular interconnections which may be provided with strengths (weights) w(sub ij) using multiple laser beams which address multiple holograms and means for combining the beams modified by the holograms to form multiple interconnections, such as a cross-bar switching network. The optical means for interconnection is based on entering a series of complex computer-generated holograms on an electrically addressed spatial light modulator for real-time reconfigurations, thus providing flexibility for interconnection networks for large-scale practical use. By employing multiple sources and holograms, the number of interconnection patterns achieved is increased greatly.

  11. Compact Interconnection Networks Based on Quantum Dots

    Science.gov (United States)

    Fijany, Amir; Toomarian, Nikzad; Modarress, Katayoon; Spotnitz, Matthew

    2003-01-01

    Architectures that would exploit the distinct characteristics of quantum-dot cellular automata (QCA) have been proposed for digital communication networks that connect advanced digital computing circuits. In comparison with networks of wires in conventional very-large-scale integrated (VLSI) circuitry, the networks according to the proposed architectures would be more compact. The proposed architectures would make it possible to implement complex interconnection schemes that are required for some advanced parallel-computing algorithms and that are difficult (and in many cases impractical) to implement in VLSI circuitry. The difficulty of implementation in VLSI and the major potential advantage afforded by QCA were described previously in Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42. To recapitulate: Wherever two wires in a conventional VLSI circuit cross each other and are required not to be in electrical contact with each other, there must be a layer of electrical insulation between them. This, in turn, makes it necessary to resort to a noncoplanar and possibly a multilayer design, which can be complex, expensive, and even impractical. As a result, much of the cost of designing VLSI circuits is associated with minimization of data routing and assignment of layers to minimize crossing of wires. Heretofore, these considerations have impeded the development of VLSI circuitry to implement complex, advanced interconnection schemes. On the other hand, with suitable design and under suitable operating conditions, QCA-based signal paths can be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. The proposed architectures require two advances in QCA-based circuitry beyond basic QCA-based binary

  12. Current Solutions: Recent Experience in Interconnecting Distributed Energy Resources

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, M.

    2003-09-01

    This report catalogues selected real-world technical experiences of utilities and customers that have interconnected distributed energy assets with the electric grid. This study was initiated to assess the actual technical practices for interconnecting distributed generation and had a particular focus on the technical issues covered under the Institute of Electrical and Electronics Engineers (IEEE) 1547(TM) Standard for Interconnecting Distributed Resources With Electric Power Systems.

  13. Interconnection network architectures based on integrated orbital angular momentum emitters

    Science.gov (United States)

    Scaffardi, Mirco; Zhang, Ning; Malik, Muhammad Nouman; Lazzeri, Emma; Klitis, Charalambos; Lavery, Martin; Sorel, Marc; Bogoni, Antonella

    2018-02-01

    Novel architectures for two-layer interconnection networks based on concentric OAM emitters are presented. A scalability analysis is done in terms of devices characteristics, power budget and optical signal to noise ratio by exploiting experimentally measured parameters. The analysis shows that by exploiting optical amplifications, the proposed interconnection networks can support a number of ports higher than 100. The OAM crosstalk induced-penalty, evaluated through an experimental characterization, do not significantly affect the interconnection network performance.

  14. Cost based interconnection charges as a way to induce competition

    DEFF Research Database (Denmark)

    Falch, Morten

    The objective of this paper is to analyse the relationship between regulation of interconnection charges and the level of competition. One of the most important issues in the debate on interconnect regulation has been use of forward looking costs for setting of interconnection charges. This debat...... has been ongoing within the EU as well as in US. This paper discusses the European experiences and in particular the Danish experiences with use of cost based interconnection charges, and their impact on competition in the telecom market....

  15. Financial viability of the Sonora-Baja California interconnection line

    International Nuclear Information System (INIS)

    Alonso, G.; Ortega, G.

    2017-09-01

    In the Development Program of the National Electricity Sector 2015-2029, an electric interconnection line between Sonora and Baja California (Mexico) is proposed, this study analyzes the financial viability of this interconnection line based on the maximum hourly and seasonal energy demand between both regions and proposes alternatives for the supply of electric power that supports the economic convenience of this interconnection line. The results show that additional capacity is required in Sonora to cover the maximum demands of both regions since in the current condition of the National Electric System the interconnection line is not justified. (Author)

  16. 78 FR 73239 - Small Generator Interconnection Agreements and Procedures

    Science.gov (United States)

    2013-12-05

    ... Electronics Engineers (IEEE) Standard 1547 for Interconnecting Distributed Resources with Electric Power... discriminatory manner.\\38\\ \\37\\ The Electricity Consumers Resource Council, American Chemistry Council, American...

  17. 1st International Conference on Opto-Electronics and Applied Optics

    CERN Document Server

    Bhattacharya, Indrani

    2015-01-01

    The Proceedings of First International Conference on Opto-Electronics and Applied Optics 2014, IEM OPTRONIX 2014 presents the research contributions presented in the conference by researchers from both India and abroad. Contributions from established scientists as well as students are included. The book is organized to enable easy access to various topics of interest.   The first part includes the Keynote addresses by Phillip Russell, Max Planck Institute of the Light Sciences, Erlangen, Germany and Lorenzo Pavesi, University of Trento, Italy.   The second part focuses on the Plenary Talks given by eminent scientists, namely, Azizur Rahman, City University London, London; Bishnu Pal, President, The Optical Society of India; Kamakhya Ghatak, National Institute of Technology, Agartala; Kehar Singh, Former Professor, India Institute of Technology Delhi; Mourad Zghal, SUPCOM, University of Carthage, Tunisia; Partha Roy Chaudhuri, IIT Kharagpur; S K. Bhadra, CSIR-Central Glass and Ceramic Research Institute, Kol...

  18. Asynchronous decentralized method for interconnected electricity markets

    International Nuclear Information System (INIS)

    Huang, Anni; Joo, Sung-Kwan; Song, Kyung-Bin; Kim, Jin-Ho; Lee, Kisung

    2008-01-01

    This paper presents an asynchronous decentralized method to solve the optimization problem of interconnected electricity markets. The proposed method decomposes the optimization problem of combined electricity markets into individual optimization problems. The impact of neighboring markets' information is included in the objective function of the individual market optimization problem by the standard Lagrangian relaxation method. Most decentralized optimization methods use synchronous models of communication to exchange updated market information among markets during the iterative process. In this paper, however, the solutions of the individual optimization problems are coordinated through an asynchronous communication model until they converge to the global optimal solution of combined markets. Numerical examples are presented to demonstrate the advantages of the proposed asynchronous method over the existing synchronous methods. (author)

  19. New transmission interconnection reduces consumer costs

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    2008-09-15

    The Central American electric interconnection system (SIEPAC) project will involve the construction of a 1830 km 230 kV transmission system that will link Guatemala, El Salvador, Honduras, Costa Rica, Nicaragua, and Panama. The system is expected to alleviate the region's power shortages and reduce electricity costs for consumers. Costs for the SIEPAC project have been estimated at $370 million. The system will serve approximately 37 million customers, and will include 15 substations. The contract for building the electrical equipment has been awarded to Schweitzer Engineering Laboratories (SEL) who plan to manufacture components at a plant in Mexico. The equipment will include high speed line protection, automation, and control systems. Line current differential systems and satellite-synchronized clocks will also be used. The new transmission system is expected to be fully operational by 2009. 1 fig.

  20. SIDES - Segment Interconnect Diagnostic Expert System

    International Nuclear Information System (INIS)

    Booth, A.W.; Forster, R.; Gustafsson, L.; Ho, N.

    1989-01-01

    It is well known that the FASTBUS Segment Interconnect (SI) provides a communication path between two otherwise independent, asynchronous bus segments. The SI is probably the most important module in any FASTBUS data acquisition network since it's failure to function can cause whole segments of the network to be inaccessible and sometimes inoperable. This paper describes SIDES, an intelligent program designed to diagnose SI's both in situ as they operate in a data acquisition network, and in the laboratory in an acceptance/repair environment. The paper discusses important issues such as knowledge acquisition; extracting knowledge from human experts and other knowledge sources. SIDES can benefit high energy physics experiments, where SI problems can be diagnosed and solved more quickly. Equipment pool technicians can also benefit from SIDES, first by decreasing the number of SI's erroneously turned in for repair, and secondly as SIDES acts as an intelligent assistant to the technician in the diagnosis and repair process

  1. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    International Nuclear Information System (INIS)

    Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-01-01

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

  2. Electric power grid interconnection in Northeast Asia

    International Nuclear Information System (INIS)

    Yun, Won-Cheol; Zhang, Zhong Xiang

    2006-01-01

    In spite of regional closeness, energy cooperation in Northeast Asia has remained unexplored. However, this situation appears to be changing. The government of South Korea seems to be very enthusiastic for power grid interconnection between the Russian Far East and South Korea to overcome difficulties in finding new sites for building power facilities to meet its need for increased electricity supplies. This paper analyzes the feasibility of this electric power grid interconnection route. The issues addressed include electricity market structures; the prospects for electric power industry restructuring in the Russian Federation and South Korea; the political issues related to North Korea; the challenges for the governments involved and the obstacles anticipated in moving this project forward; project financing and the roles and concerns from multilateral and regional banks; and institutional framework for energy cooperation. While there are many technical issues that need to be resolved, we think that the great challenge lies in the financing of this commercial project. Thus, the governments of the Russian Federation and South Korea involved in the project need to foster the development of their internal capital markets and to create confidence with international investors. To this end, on energy side, this involves defining a clear energy policy implemented by independent regulators, speeding up the already started but delayed reform process of restructuring electric power industry and markets, and establishing a fair and transparent dispute resolution mechanism in order to reduce non-commercial risks to a minimum. The paper argues that establishing a framework for energy cooperation in this region will contribute positively towards that end, although views differ regarding its specific form. Finally, given that North Korea has a crucial transit role to play and faces a very unstable political situation, it is concluded that moving the project forward needs to be

  3. Exploration on the training mode of application-oriented talents majoring in optoelectronic information

    Science.gov (United States)

    Lv, Hao; Liu, Aimei; Zhang, Shengyi; Xiao, Yongjun

    2017-08-01

    The optoelectronic information major is a strong theoretical and practical specialty. In view of the problems existing in the application-oriented talents training in the optoelectronic information specialty. Five aspects of the talent cultivation plan, the teaching staff, the teaching content, the practical teaching and the scientific research on the training mode of application-oriented talents majoring in optoelectronic information are putted forward. It is beneficial to the specialty construction of optoelectronic information industry which become close to the development of enterprises, and the depth of the integration of school and enterprise service regional economic optoelectronic information high-end skilled personnel base.

  4. Energy conservation through the implementation of cogeneration and grid interconnection

    International Nuclear Information System (INIS)

    Dashash, M. A.

    2007-01-01

    With increasing awareness of energy conservation and environmental protection, the Arab World is moving to further improve energy conversion efficiency. The equivalent of over 2.7 MM bbl is being daily burnt to fuel the thermal power plants that represent 92% of the total Arab power generation. This adds up to close to one billion barrels annually. At a conservative 30$ per barrel, this represents a daily cost of over $81 Million. This paper will introduce two strategies with the ultimate objective to cut-off up to half of the current fuel consumption. Firstly, Cogeneration Technology is able to improve thermal efficiency from the current average of less than 25% to up to 80%. Just 1% improvement in power plant thermal efficiency represents 3 million $/day in fuel cost savings. In addition, a well-designed and operated cogeneration plant will: - Reduce unfriendly emissions by burning less fuel as a result of higher thermal efficiency, - Increase the decentralization of electrical generation, - Improve the reliability of electricity supply. As an example, the Kingdom of Saudi Arabia's experience of implementing cogeneration will be presented, in particular within its hydrocarbon facilities and desalination plants. This will include the existing facilities and the planned and on-going projects. Secondly, by interconnecting the power networks of all the adjacent Arab countries, the following benefits could be reached: - Reduce generation reserves and enhance the system reliability, - Improve the economic efficiency of the electricity power systems, - Provide power exchange and strengthen the supply reliability, - Adopt technological development and use the best modern technologies. At least two factors plead for this direction. On one hand, the four-hour time zone difference from Eastern to Western Arab World makes it easy to exchange power. On the other hand, this will help to reduce the reserve capacity and save on corresponding Capital investment, fuel, and O and M

  5. Capacity-oriented curriculum system of optoelectronics in the context of large category cultivation

    Science.gov (United States)

    Luo, Yuan; Hu, Zhangfang; Zhang, Yi

    2017-08-01

    In order to cultivate the innovative talents with the comprehensive development to meet the talents demand for development of economic society, Chongqing University of Posts and Telecommunications implements cultivation based on broadening basic education and enrolment in large category of general education. Optoelectronic information science and engineering major belongs to the electronic engineering category. The "2 +2" mode is utilized for personnel training, where students are without major in the first and second year and assigned to a major within the major categories in the end of the second year. In the context of the comprehensive cultivation, for the changes in the demand for professionals in the global competitive environment with the currently rapid development, especially the demand for the professional engineering technology personnel suitable to industry and development of local economic society, the concept of CDIO engineering ability cultivation is used for reference. Thus the curriculum system for the three-node structure optoelectronic information science and engineering major is proposed, which attaches great importance to engineering practice and innovation cultivation under the background of the comprehensive cultivation. The conformity between the curriculum system and the personnel training objectives is guaranteed effectively, and the consistency between the teaching philosophy and the teaching behavior is enhanced. Therefore, the idea of major construction is clear with specific characteristics.

  6. ``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon

    Science.gov (United States)

    Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant

    2014-03-01

    Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.

  7. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Shriniwas, E-mail: sniwas89@gmail.com; Kaur, Inderpreet, E-mail: inderpreety@yahoo.co.in [Academy of Scientific and Innovative Research- Central Scientific Instruments Organisation (AcSIR-CSIO), Sector-30C, Chandigarh (India); Council of Scientific and Industrial Research- Central Scientific Instruments Organisation (CSIR-CSIO), Sector-30C, Chandigarh (India)

    2016-04-13

    Graphene, an atom–thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σ{sub dc}/σ{sub opt}) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  8. Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance

    KAUST Repository

    Banavoth, Murali

    2016-12-14

    Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including various fabrication methods, device architectures, and surface passivation, progress is yet to be made in understanding the actual operational temperature on the electronic properties and the device performances. Therefore, the substantial effect of temperature on the optoelectronic properties, charge separation, charge recombination dynamics, and photoconversion efficiency are explored. The results clearly demonstrated a significant enhancement in the carrier mobility, photocurrent, charge carrier lifetime, and solar cell performance in the 60 ± 5 °C temperature range. In this temperature range, perovskite crystal exhibits a highly symmetrical relaxed cubic structure with well-aligned domains that are perpendicular to a principal axis, thereby remarkably improving the device operation. This finding provides a new key variable component and paves the way toward using perovskite crystals in highly efficient photovoltaic cells.

  9. Electrical transport and electromigration studies on nickel encapsulated carbon nanotubes: possible future interconnects

    International Nuclear Information System (INIS)

    Kulshrestha, Neha; Misra, D S; Misra, Abhishek

    2013-01-01

    We nominate the nickel filled multiwalled carbon nanotubes (MWNTs) as potential candidates to cope with challenges in persistent scaling for future interconnect technology. The insights into electrical transport through nickel filled carbon nanotubes provide an effective solution for major performance and reliability issues such as the increasing resistivity of metals at reduced scales, electromigration at high current densities and the problem of diffusion and corrosion faced by the existing copper interconnect technology. Furthermore, the nickel filled MWNTs outperform their hollow counterparts, the unfilled MWNTs, carrying at least one order higher current density, with increased time to failure. The results suggest that metal filled carbon nanotubes can provide a twofold benefit: (1) the metal filling provides an increased density of states for the system leading to a higher current density compared to hollow MWNTs, (2) metal out-diffusion and corrosion is prevented by the surrounding graphitic walls. (paper)

  10. U.S. Laws and Regulations for Renewable Energy Grid Interconnections

    Energy Technology Data Exchange (ETDEWEB)

    Chernyakhovskiy, Ilya [National Renewable Energy Lab. (NREL), Golden, CO (United States); Tian, Tian [National Renewable Energy Lab. (NREL), Golden, CO (United States); McLaren, Joyce [National Renewable Energy Lab. (NREL), Golden, CO (United States); Miller, Mackay [National Renewable Energy Lab. (NREL), Golden, CO (United States); Geller, Nina [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2016-09-01

    Rapidly declining costs of wind and solar energy technologies, increasing concerns about the environmental and climate change impacts of fossil fuels, and sustained investment in renewable energy projects all point to a not-so-distant future in which renewable energy plays a pivotal role in the electric power system of the 21st century. In light of public pressures and market factors that hasten the transition towards a low-carbon system, power system planners and regulators are preparing to integrate higher levels of variable renewable generation into the grid. Updating the regulations that govern generator interconnections and operations is crucial to ensure system reliability while creating an enabling environment for renewable energy development. This report presents a chronological review of energy laws and regulations concerning grid interconnection procedures in the United States, highlighting the consequences of policies for renewable energy interconnections. Where appropriate, this report places interconnection policies and their impacts on renewable energy within the broader context of power market reform.

  11. Unavailability of critical SCADA communication links interconnecting a power grid and a Telco network

    International Nuclear Information System (INIS)

    Bobbio, A.; Bonanni, G.; Ciancamerla, E.; Clemente, R.; Iacomini, A.; Minichino, M.; Scarlatti, A.; Terruggia, R.; Zendri, E.

    2010-01-01

    The availability of power supply to power grid customers depends upon the availability of services of supervision, control and data acquisition (SCADA) system, which constitutes the nervous system of a power grid. In turn, SCADA services depend on the availability of the interconnected networks supporting such services. We propose a service oriented stochastic modelling methodology to investigate the availability of large interconnected networks, based on the hierarchical application of different modelling formalisms to different parts of the networks. Interconnected networks are decomposed according to the specific services delivered until the failure and repair mechanisms of the decomposed elementary blocks can be identified. We represent each network by a convenient stochastic modelling formalism, able to capture the main technological issues and to cope with realistic assumptions about failure and recovery mechanisms. This procedure confines the application of the more intensive computational techniques to those subsystems that actually require it. The paper concentrates on an actual failure scenario, occurred in Rome in January 2004 that involved the outage of critical SCADA communication links, interconnecting a power grid and a Telco network.

  12. Unavailability of critical SCADA communication links interconnecting a power grid and a Telco network

    Energy Technology Data Exchange (ETDEWEB)

    Bobbio, A. [Dipartimento di Informatica, Universita del Piemonte Orientale, Viale Michel 11, 15121 Alessandria (Italy); Bonanni, G.; Ciancamerla, E. [ENEA - CRE Casaccia, Via Anguillarese 301, 00060 Roma (Italy); Clemente, R. [Telecom Italia Mobile, Via Isonzo112, 10141 Torino (Italy); Iacomini, A. [ACEA, Pl. Ostiense 2, 00154 Roma (Italy); Minichino, M., E-mail: minichino@casaccia.enea.i [ENEA - CRE Casaccia, Via Anguillarese 301, 00060 Roma (Italy); Scarlatti, A. [ACEA, Pl. Ostiense 2, 00154 Roma (Italy); Terruggia, R. [Dipartimento di Informatica, Universita del Piemonte Orientale, Viale Michel 11, 15121 Alessandria (Italy); Zendri, E. [ACEA, Pl. Ostiense 2, 00154 Roma (Italy)

    2010-12-15

    The availability of power supply to power grid customers depends upon the availability of services of supervision, control and data acquisition (SCADA) system, which constitutes the nervous system of a power grid. In turn, SCADA services depend on the availability of the interconnected networks supporting such services. We propose a service oriented stochastic modelling methodology to investigate the availability of large interconnected networks, based on the hierarchical application of different modelling formalisms to different parts of the networks. Interconnected networks are decomposed according to the specific services delivered until the failure and repair mechanisms of the decomposed elementary blocks can be identified. We represent each network by a convenient stochastic modelling formalism, able to capture the main technological issues and to cope with realistic assumptions about failure and recovery mechanisms. This procedure confines the application of the more intensive computational techniques to those subsystems that actually require it. The paper concentrates on an actual failure scenario, occurred in Rome in January 2004 that involved the outage of critical SCADA communication links, interconnecting a power grid and a Telco network.

  13. RapidIO as a multi-purpose interconnect

    Science.gov (United States)

    Baymani, Simaolhoda; Alexopoulos, Konstantinos; Valat, Sébastien

    2017-10-01

    RapidIO (http://rapidio.org/) technology is a packet-switched high-performance fabric, which has been under active development since 1997. Originally meant to be a front side bus, it developed into a system level interconnect which is today used in all 4G/LTE base stations world wide. RapidIO is often used in embedded systems that require high reliability, low latency and scalability in a heterogeneous environment - features that are highly interesting for several use cases, such as data analytics and data acquisition (DAQ) networks. We will present the results of evaluating RapidIO in a data analytics environment, from setup to benchmark. Specifically, we will share the experience of running ROOT and Hadoop on top of RapidIO. To demonstrate the multi-purpose characteristics of RapidIO, we will also present the results of investigating RapidIO as a technology for high-speed DAQ networks using a generic multi-protocol event-building emulation tool. In addition we will present lessons learned from implementing native ports of CERN applications to RapidIO.

  14. Optimal interconnection and renewable targets for north-west Europe

    International Nuclear Information System (INIS)

    Lynch, Muireann Á.; Tol, Richard S.J.; O'Malley, Mark J.

    2012-01-01

    We present a mixed-integer, linear programming model for determining optimal interconnection for a given level of renewable generation using a cost minimisation approach. Optimal interconnection and capacity investment decisions are determined under various targets for renewable penetration. The model is applied to a test system for eight regions in Northern Europe. It is found that considerations on the supply side dominate demand side considerations when determining optimal interconnection investment: interconnection is found to decrease generation capacity investment and total costs only when there is a target for renewable generation. Higher wind integration costs see a concentration of wind in high-wind regions with interconnection to other regions. - Highlights: ► We use mixed-integer linear programming to determine optimal interconnection locations for given renewable targets. ► The model is applied to a test system for eight regions in Northern Europe. ► Interconnection reduces costs only when there is a renewable target. ► Wind integration costs affect the interconnection portfolio.

  15. 14 CFR 29.957 - Flow between interconnected tanks.

    Science.gov (United States)

    2010-01-01

    ... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System § 29.957 Flow between interconnected tanks. (a) Where tank outlets are interconnected and allow fuel to flow between them due to gravity or flight accelerations, it must be impossible for fuel to flow between tanks in...

  16. Robert Aymar seals the last interconnect in the LHC

    CERN Multimedia

    Maximilien Brice

    2007-01-01

    The LHC completes the circle. On 7 November, in a brief ceremony in the LHC tunnel, CERN Director General Robert Aymar (Photo 1) sealed the last interconnect between the main magnets of the Large Hadron Collider (LHC). Jean-Philippe Tock, leader of the Interconnections team, tightens the last bolt (Photos 4-8).

  17. Circuit and interconnect design for high bit-rate applications

    NARCIS (Netherlands)

    Veenstra, H.

    2006-01-01

    This thesis presents circuit and interconnect design techniques and design flows that address the most difficult and ill-defined aspects of the design of ICs for high bit-rate applications. Bottlenecks in interconnect design, circuit design and on-chip signal distribution for high bit-rate

  18. Mapping of interconnection of climate risks

    Science.gov (United States)

    Yokohata, Tokuta; Tanaka, Katsumasa; Nishina, Kazuya; Takanashi, Kiyoshi; Emori, Seita; Kiguchi, Masashi; Iseri, Yoshihiko; Honda, Yasushi; Okada, Masashi; Masaki, Yoshimitsu; Yamamoto, Akitomo; Shigemitsu, Masahito; Yoshimori, Masakazu; Sueyoshi, Tetsuo; Iwase, Kenta; Hanasaki, Naota; Ito, Akihiko; Sakurai, Gen; Iizumi, Toshichika; Oki, Taikan

    2015-04-01

    Anthropogenic climate change possibly causes various impacts on human society and ecosystem. Here, we call possible damages or benefits caused by the future climate change as "climate risks". Many climate risks are closely interconnected with each other by direct cause-effect relationship. In this study, the major climate risks are comprehensively summarized based on the survey of studies in the literature using IPCC AR5 etc, and their cause-effect relationship are visualized by a "network diagram". This research is conducted by the collaboration between the experts of various fields, such as water, energy, agriculture, health, society, and eco-system under the project called ICA-RUS (Integrated Climate Assessment - Risks, Uncertainties and Society). First, the climate risks are classified into 9 categories (water, energy, food, health, disaster, industry, society, ecosystem, and tipping elements). Second, researchers of these fields in our project survey the research articles, and pick up items of climate risks, and possible cause-effect relationship between the risk items. A long list of the climate risks is summarized into ~130, and that of possible cause-effect relationship between the risk items is summarized into ~300, because the network diagram would be illegible if the number of the risk items and cause-effect relationship is too large. Here, we only consider the risks that could occur if climate mitigation policies are not conducted. Finally, the chain of climate risks is visualized by creating a "network diagram" based on a network graph theory (Fruchtman & Reingold algorithm). Through the analysis of network diagram, we find that climate risks at various sectors are closely related. For example, the decrease in the precipitation under the global climate change possibly causes the decrease in river runoff and the decrease in soil moisture, which causes the changes in crop production. The changes in crop production can have an impact on society by

  19. Fuel cell electrode interconnect contact material encapsulation and method

    Science.gov (United States)

    Derose, Anthony J.; Haltiner, Jr., Karl J.; Gudyka, Russell A.; Bonadies, Joseph V.; Silvis, Thomas W.

    2016-05-31

    A fuel cell stack includes a plurality of fuel cell cassettes each including a fuel cell with an anode and a cathode. Each fuel cell cassette also includes an electrode interconnect adjacent to the anode or the cathode for providing electrical communication between an adjacent fuel cell cassette and the anode or the cathode. The interconnect includes a plurality of electrode interconnect protrusions defining a flow passage along the anode or the cathode for communicating oxidant or fuel to the anode or the cathode. An electrically conductive material is disposed between at least one of the electrode interconnect protrusions and the anode or the cathode in order to provide a stable electrical contact between the electrode interconnect and the anode or cathode. An encapsulating arrangement segregates the electrically conductive material from the flow passage thereby, preventing volatilization of the electrically conductive material in use of the fuel cell stack.

  20. Solar-cell interconnect design for terrestrial photovoltaic modules

    Science.gov (United States)

    Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

    1984-01-01

    Useful solar cell interconnect reliability design and life prediction algorithms are presented, together with experimental data indicating that the classical strain cycle (fatigue) curve for the interconnect material does not account for the statistical scatter that is required in reliability predictions. This shortcoming is presently addressed by fitting a functional form to experimental cumulative interconnect failure rate data, which thereby yields statistical fatigue curves enabling not only the prediction of cumulative interconnect failures during the design life of an array field, but also the quantitative interpretation of data from accelerated thermal cycling tests. Optimal interconnect cost reliability design algorithms are also derived which may allow the minimization of energy cost over the design life of the array field.

  1. Advances in graphene-based optoelectronics, plasmonics and photonics

    International Nuclear Information System (INIS)

    Nguyen, Bich Ha; Nguyen, Van Hieu

    2016-01-01

    Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented. (review)

  2. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    Science.gov (United States)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  3. The Cellulose Nanofibers for Optoelectronic Conversion and Energy Storage

    Directory of Open Access Journals (Sweden)

    Yongfeng Luo

    2014-01-01

    Full Text Available Cellulose widely exists in plant tissues. Due to the large pores between the cellulose units, the regular paper is nontransparent that cannot be used in the optoelectronic devices. But some chemical and physical methods such as 2,2,6,6-tetramethylpiperidine-1-oxyl radical (TEMPO oxidation can be used to improve the pores scale between the cellulose units to reach nanometer level. The cellulose nanofibers (CNFs have good mechanical strength, flexibility, thermostability, and low thermal expansion. The paper made of these nanofibers represent a kind of novel nanostructured material with ultrahigh transparency, ultrahigh haze, conductivity, biodegradable, reproducible, low pollution, environment friendly and so on. These advantages make the novel nanostructured paper apply in the optoelectronic device possible, such as electronics energy storage devices. This kind of paper is considered most likely to replace traditional materials like plastics and glass, which is attracting widespread attention, and the related research has also been reported. The purpose of this paper is to review CNFs which are applied in optoelectronic conversion and energy storage.

  4. Nuclear physics and optoelectronics presence in industry, medicine and environment

    International Nuclear Information System (INIS)

    Robu, Maria; Peteu, Gh.

    2000-01-01

    This paper reveals applications of Nuclear Physics and Optoelectronics in numerous fields of interest in industry, medicine, environment. In the first part of the work basic elements are analyzed, among which: - the large possibilities offered by the investigation, analysis and testing techniques based on nuclear physics and optoelectronics; - the superior qualitative and quantitative characteristics of these techniques, with varied applicability in fields from industry, medicine and environment. These applications refers to: - elemental analyses of content and impurities; - non-destructive testing with X and gamma radiations; - investigations with radioactive and activable tracers in trophic chains as for instance, ground-vegetation-products-consumers-environment, including also the systemic pollution factors; - complex investigations in the interface tritium-vegetation-environment-humans; - techniques and radiopharmaceutical products for medical investigations; - determinations and automatic control for levels, density, thickness, humidity, surfaces covering; - monitoring by means of remote sensing for the evaluation of the environment, vegetation and pollution factors; - applications and production of laser and UV installations; - connections through optical fibres resistant to radiations; - imaging and medical bioengineering; - advances in X ray, laser and ultrasonic radiology; - monitoring with radiations beams. In the final part, there are presented examples of optoelectronics and nuclear physics applications in fields in industry, medicine and environment, with special stress on their basic characteristics and efficiency. (authors)

  5. Light box for investigation of characteristics of optoelectronics detectors

    Science.gov (United States)

    Szreder, Agnieszka; Mazikowski, Adam

    2017-09-01

    In this paper, a light box for investigation of characteristics of optoelectronic detectors is described. The light box consists of an illumination device, an optical power sensor and a mechanical enclosure. The illumination device is based on four types of high-power light emitting diodes (LED): white light, red, green and blue. The illumination level can be varied for each LED independently by the driver and is measured by optical power sensor. The mechanical enclosure provides stable mounting points for the illumination device, sensor and the examined detector and protects the system from external light, which would otherwise strongly influence the measurement results. Uniformity of illumination distribution provided by the light box for all colors is good, making the measurement results less dependent on the position of the examined detector. The response of optoelectronic detectors can be investigated using the developed light box for each LED separately or for any combination of up to four LED types. As the red, green and blue LEDs are rather narrow bandwidth sources, spectral response of different detectors can be examined for these wavelength ranges. The described light box can be used for different applications. Its primary use is in a student laboratory setup for investigation of characteristics of optoelectronic detectors. Moreover, it can also be used in various colorimetric or photographic applications. Finally, it will be used as a part of demonstrations from the fields of vision and color, performed during science fairs and outreach activities increasing awareness of optics and photonics.

  6. 76 FR 45248 - PJM Interconnection, L.L.C., PJM Power Providers Group v. PJM Interconnection, L.L.C...

    Science.gov (United States)

    2011-07-28

    ...-002; Docket No. EL11-20-001] PJM Interconnection, L.L.C., PJM Power Providers Group v. PJM Interconnection, L.L.C.; Supplemental Notice of Staff Technical Conference On June 13, 2011, the Commission issued... Resources Services, Inc., Maryland Public Service Commission, Monitoring Analytics, L.L.C., National Rural...

  7. 76 FR 39870 - PJM Interconnection, LLC; PJM Power Providers Group v. PJM Interconnection, LLC; Notice of Date...

    Science.gov (United States)

    2011-07-07

    .... EL11-20-001] PJM Interconnection, LLC; PJM Power Providers Group v. PJM Interconnection, LLC; Notice of... Sell Offers for Planned Generation Capacity Resources submitted into PJM's Reliability Pricing Model... presents an opportunity to exercise buyer market power; (2) whether the Fixed Resource Requirement (FRR...

  8. Interconnection issues in Ontario : a status check

    International Nuclear Information System (INIS)

    Helbronner, V.

    2010-01-01

    This PowerPoint presentation discussed wind and renewable energy interconnection issues in Ontario. The province's Green Energy Act established a feed-in tariff (FIT) program and provided priority connection access to the electricity system for renewable energy generation facilities that meet regulatory requirements. As a result of the province's initiatives, Hydro One has identified 20 priority transmission expansion projects and is focusing on servicing renewable resource clusters. As of October 2010, the Ontario Power Authority (OPA) has received 1469 MW of FIT contracts executed for wind projects. A further 5953 MW of wind projects are awaiting approval. A Korean consortium is now planning to develop 2500 MW of renewable energy projects in the province. The OPA has also been asked to develop an updated transmission expansion plan. Transmission/distribution availability tests (TAT/DAT) have been established to determine if there is sufficient connection availability for FIT application projects. Economic connection tests (ECTs) are conducted to assess whether grid upgrade costs to enable additional FIT capacity are justifiable. When projects pass the ECT, grid upgrades needed for the connection included in grid expansion plans. Ontario's long term energy plan was also reviewed. tabs., figs.

  9. Thermal Runaways in LHC Interconnections: Experiments

    CERN Document Server

    Willering, G P; Bottura, L; Scheuerlein, C; Verweij, A P

    2011-01-01

    The incident in the LHC in September 2008 occurred in an interconnection between two magnets of the 13 kA dipole circuit. This event was traced to a defect in one of the soldered joints between two superconducting cables stabilized by a copper busbar. Further investigation revealed defective joints of other types. A combination of (1) a poor contact between the superconducting cable and the copper stabilizer and (2) an electrical discontinuity in the stabilizer at the level of the connection can lead to an unprotected quench of the busbar. Once the heating power in the unprotected superconducting cable exceeds the heat removal capacity a thermal run-away occurs, resulting in a fast melt-down of the non-stabilized cable. We have performed a thorough investigation of the conditions upon which a thermal run-away in the defect can occur. To this aim, we have prepared heavily instrumented samples with well-defined and controlled defects. In this paper we describe the experiment, and the analysis of the data, and w...

  10. Microtexture of Strain in electroplated copper interconnects

    International Nuclear Information System (INIS)

    Spolenak, R.; Barr, D.L.; Gross, M.E.; Evans-Lutterodt, K.; Brown, W.L.; Tamura, N.; MacDowell, A.A.; Celestre, R.S.; Padmore, H.A.; Valek, B.C.; Bravman, J.C.; Flinn, P.; Marieb, T.; Keller, R.R.; Batterman, B.W.; Patel, J.R.

    2001-01-01

    The microstructure of narrow metal conductors in the electrical interconnections on IC chips has often been identified as of major importance in the reliability of these devices. The stresses and stress gradients that develop in the conductors as a result of thermal expansion differences in the materials and of electromigration at high current densities are believed to be strongly dependent on the details of the grain structure. The present work discusses new techniques based on microbeam x-ray diffraction (MBXRD) that have enabled measurement not only of the microstructure of totally encapsulated conductors but also of the local stresses in them on a micron and submicron scale. White x-rays from the Advanced Light Source were focused to a micron spot size by Kirkpatrick-Baez mirrors. The sample was stepped under the micro-beam and Laue images obtained at each sample location using a CCD area detector. Microstructure and local strain were deduced from these images. Cu lines with widths ranging from 0.8 mm to 5 mm and thickness of 1 mm were investigated. Comparisons are made between the capabilities of MBXRD and the well established techniques of broad beam XRD, electron back scatter diffraction (EBSD) and focused ion beam imagining (FIB)

  11. Optical coupling of bare optoelectronic components and flexographically printed polymer waveguides in planar optronic systems

    Science.gov (United States)

    Wang, Yixiao; Wolfer, Tim; Lange, Alex; Overmeyer, Ludger

    2016-05-01

    Large scale, planar optronic systems allowing spatially distributed functionalities can be well used in diverse sensor networks, such as for monitoring the environment by measuring various physical quantities in medicine or aeronautics. In these systems, mechanically flexible and optically transparent polymeric foils, e.g. polymethyl methacrylate (PMMA) and polyethylene terephthalate (PET), are employed as carrier materials. A benefit of using these materials is their low cost. The optical interconnections from light sources to light transmission structures in planar optronic systems occupy a pivotal position for the sensing functions. As light sources, we employ the optoelectronic components, such as edgeemitting laser diodes, in form of bare chips, since their extremely small structures facilitate a high integration compactness and ensure sufficient system flexibility. Flexographically printed polymer optical waveguides are deployed as light guiding structures for short-distance communication in planar optronic systems. Printing processes are utilized for this generation of waveguides to achieve a cost-efficient large scale and high-throughput production. In order to attain a high-functional optronic system for sensing applications, one of the most essential prerequisites is the high coupling efficiency between the light sources and the waveguides. Therefore, in this work, we focus on the multimode polymer waveguide with a parabolic cross-section and investigate its optical coupling with the bare laser diode. We establish the geometrical model of the alignment based on the previous works on the optodic bonding of bare laser diodes and the fabrication process of polymer waveguides with consideration of various parameters, such as the beam profile of the laser diode, the employed polymer properties of the waveguides as well as the carrier substrates etc. Accordingly, the optical coupling of the bare laser diodes and the polymer waveguides was simulated

  12. Signal Integrity Analysis in Single and Bundled Carbon Nanotube Interconnects

    International Nuclear Information System (INIS)

    Majumder, M.K.; Pandya, N.D.; Kaushik, B.K.; Manhas, S.K.

    2013-01-01

    Carbon nanotube (CN T) can be considered as an emerging interconnect material in current nano scale regime. They are more promising than other interconnect materials such as Al or Cu because of their robustness to electromigration. This research paper aims to address the crosstalk-related issues (signal integrity) in interconnect lines. Different analytical models of single- (SWCNT), double- (DWCNT), and multiwalled CNTs (MWCNT) are studied to analyze the crosstalk delay at global interconnect lengths. A capacitively coupled three-line bus architecture employing CMOS driver is used for accurate estimation of crosstalk delay. Each line in bus architecture is represented with the equivalent RLC models of single and bundled SWCNT, DWCNT, and MWCNT interconnects. Crosstalk delay is observed at middle line (victim) when it switches in opposite direction with respect to the other two lines (aggressors). Using the data predicted by ITRS 2012, a comparative analysis on the basis of crosstalk delay is performed for bundled SWCNT/DWCNT and single MWCNT interconnects. It is observed that the overall crosstalk delay is improved by 40.92% and 21.37% for single MWCNT in comparison to bundled SWCNT and bundled DWCNT interconnects, respectively.

  13. Analysis of interconnecting energy systems over a synchronized life cycle

    International Nuclear Information System (INIS)

    Nian, Victor

    2016-01-01

    Highlights: • A methodology is developed for evaluating a life cycle of interconnected systems. • A new concept of partial temporal boundary is introduced via quantitative formulation. • The interconnecting systems are synchronized through the partial temporal boundary. • A case study on the life cycle of the coal–uranium system is developed. - Abstract: Life cycle analysis (LCA) using the process chain analysis (PCA) approach has been widely applied to energy systems. When applied to an individual energy system, such as coal or nuclear electricity generation, an LCA–PCA methodology can yield relatively accurate results with its detailed process representation based on engineering data. However, there are fundamental issues when applying conventional LCA–PCA methodology to a more complex life cycle, namely, a synchronized life cycle of interconnected energy systems. A synchronized life cycle of interconnected energy systems is established through direct interconnections among the processes of different energy systems, and all interconnecting systems are bounded within the same timeframe. Under such a life cycle formation, there are some major complications when applying conventional LCA–PCA methodology to evaluate the interconnecting energy systems. Essentially, the conventional system and boundary formulations developed for a life cycle of individual energy system cannot be directly applied to a life cycle of interconnected energy systems. To address these inherent issues, a new LCA–PCA methodology is presented in this paper, in which a new concept of partial temporal boundary is introduced to synchronize the interconnecting energy systems. The importance and advantages of these new developments are demonstrated through a case study on the life cycle of the coal–uranium system.

  14. Development of Innovative Distributed Power Interconnection and Control Systems: Annual Report, December 2000-December 2001

    Energy Technology Data Exchange (ETDEWEB)

    Liss, W.; Dybel, M.; West, R.; Adams, L.

    2002-11-01

    This report covers the first year's work performed by the Gas Technology Institute and Encorp Inc. under subcontract to the National Renewable Energy Laboratory. The objective of this three-year contract is to develop innovative grid interconnection and control systems. This supports the advancement of distributed generation in the marketplace by making installations more cost-effective and compatible across the electric power and energy management systems. Specifically, the goals are: (1) To develop and demonstrate cost-effective distributed power grid interconnection products and software and communication solutions applicable to improving the economics of a broad range of distributed power systems, including existing, emerging, and other power generation technologies. (2) To enhance the features and capabilities of distributed power products to integrate, interact, and provide operational benefits to the electric power and advanced energy management systems. This includes features and capabilities for participating in resource planning, the provision of ancillary services, and energy management. Specific topics of this report include the development of an advanced controller, a power sensing board, expanded communication capabilities, a revenue-grade meter interface, and a case study of an interconnection distributed power system application that is a model for demonstrating the functionalities of the design of the advanced controller.

  15. Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

    International Nuclear Information System (INIS)

    Chiodarelli, Nicolo'; Li, Yunlong; Arstila, Kai; Richard, Olivier; Cott, Daire J; Heyns, Marc; De Gendt, Stefan; Groeseneken, Guido; Vereecken, Philippe M; Masahito, Sugiura; Kashiwagi, Yusaku

    2011-01-01

    Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper based interconnects, though, CNT must fulfil their promise of also providing low electrical resistance in integrated structures using scalable integration processes fully compatible with silicon technology. Hence, carefully engineered growth and integration solutions are required before we can fully exploit their potentialities. This work tackles the problem of optimizing a CNT integration process from the electrical perspective. The technique of measuring the CNT resistance as a function of the CNT length is here extended to CNT integrated in vertical contacts. This allows extracting the linear resistivity and the contact resistance of the CNT, two parameters to our knowledge never reported separately for vertical CNT contacts and which are of utmost importance, as they respectively measure the quality of the CNT and that of their metal contacts. The technique proposed allows electrically distinguishing the impact of each processing step individually on the CNT resistivity and the CNT contact resistance. Hence it constitutes a powerful technique for optimizing the process and developing CNT contacts of superior quality. This can be of relevant technological importance not only for interconnects but also for all those applications that rely on the electrical properties of CNT grown with a catalytic chemical vapor deposition method at low temperature.

  16. Interacting Social Processes on Interconnected Networks.

    Directory of Open Access Journals (Sweden)

    Lucila G Alvarez-Zuzek

    Full Text Available We propose and study a model for the interplay between two different dynamical processes -one for opinion formation and the other for decision making- on two interconnected networks A and B. The opinion dynamics on network A corresponds to that of the M-model, where the state of each agent can take one of four possible values (S = -2,-1, 1, 2, describing its level of agreement on a given issue. The likelihood to become an extremist (S = ±2 or a moderate (S = ±1 is controlled by a reinforcement parameter r ≥ 0. The decision making dynamics on network B is akin to that of the Abrams-Strogatz model, where agents can be either in favor (S = +1 or against (S = -1 the issue. The probability that an agent changes its state is proportional to the fraction of neighbors that hold the opposite state raised to a power β. Starting from a polarized case scenario in which all agents of network A hold positive orientations while all agents of network B have a negative orientation, we explore the conditions under which one of the dynamics prevails over the other, imposing its initial orientation. We find that, for a given value of β, the two-network system reaches a consensus in the positive state (initial state of network A when the reinforcement overcomes a crossover value r*(β, while a negative consensus happens for r βc. We develop an analytical mean-field approach that gives an insight into these regimes and shows that both dynamics are equivalent along the crossover line (r*, β*.

  17. Genomic Predictability of Interconnected Biparental Maize Populations

    Science.gov (United States)

    Riedelsheimer, Christian; Endelman, Jeffrey B.; Stange, Michael; Sorrells, Mark E.; Jannink, Jean-Luc; Melchinger, Albrecht E.

    2013-01-01

    Intense structuring of plant breeding populations challenges the design of the training set (TS) in genomic selection (GS). An important open question is how the TS should be constructed from multiple related or unrelated small biparental families to predict progeny from individual crosses. Here, we used a set of five interconnected maize (Zea mays L.) populations of doubled-haploid (DH) lines derived from four parents to systematically investigate how the composition of the TS affects the prediction accuracy for lines from individual crosses. A total of 635 DH lines genotyped with 16,741 polymorphic SNPs were evaluated for five traits including Gibberella ear rot severity and three kernel yield component traits. The populations showed a genomic similarity pattern, which reflects the crossing scheme with a clear separation of full sibs, half sibs, and unrelated groups. Prediction accuracies within full-sib families of DH lines followed closely theoretical expectations, accounting for the influence of sample size and heritability of the trait. Prediction accuracies declined by 42% if full-sib DH lines were replaced by half-sib DH lines, but statistically significantly better results could be achieved if half-sib DH lines were available from both instead of only one parent of the validation population. Once both parents of the validation population were represented in the TS, including more crosses with a constant TS size did not increase accuracies. Unrelated crosses showing opposite linkage phases with the validation population resulted in negative or reduced prediction accuracies, if used alone or in combination with related families, respectively. We suggest identifying and excluding such crosses from the TS. Moreover, the observed variability among populations and traits suggests that these uncertainties must be taken into account in models optimizing the allocation of resources in GS. PMID:23535384

  18. Silicon photonic IC embedded optical-PCB for high-speed interconnect application

    Science.gov (United States)

    Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar

    2018-02-01

    Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.

  19. On-chip photonic interconnects a computer architect's perspective

    CERN Document Server

    Nitta, Christopher J; Akella, Venkatesh

    2013-01-01

    As the number of cores on a chip continues to climb, architects will need to address both bandwidth and power consumption issues related to the interconnection network. Electrical interconnects are not likely to scale well to a large number of processors for energy efficiency reasons, and the problem is compounded by the fact that there is a fixed total power budget for a die, dictated by the amount of heat that can be dissipated without special (and expensive) cooling and packaging techniques. Thus, there is a need to seek alternatives to electrical signaling for on-chip interconnection appli

  20. The Enhanced Segment Interconnect for FASTBUS data communications

    International Nuclear Information System (INIS)

    Machen, D.R.; Downing, R.W.; Kirsten, F.A.; Nelson, R.O.

    1987-01-01

    The Enhanced Segment Interconnect concept (ESI) for improved FASTBUS data communications is a development supported by the U.S. Department of Energy under the Small Business Innovation Research (SBIR) program. The ESI will contain both the Segment Interconnect (SI) Tyhpe S-1 and an optional buffered interconnect for store-and-forward data communications; fiber-optic-coupled serial ports will provide optional data paths. The ESI can be applied in large FASTBUS-implemented physics experiments whose data-set or data-transmission distance requirements dictate alternate approaches to data communications. This paper describes the functions of the ESI and the status of its development, now 25% complete

  1. Lyapunov-based Stability of Feedback Interconnections of Negative Imaginary Systems

    KAUST Repository

    Ghallab, Ahmed G.

    2017-10-19

    Feedback control systems using sensors and actuators such as piezoelectric sensors and actuators, micro-electro-mechanical systems (MEMS) sensors and opto-mechanical sensors, are allowing new advances in designing such high precision technologies. The negative imaginary control systems framework allows for robust control design for such high precision systems in the face of uncertainties due to unmodelled dynamics. The stability of the feedback interconnection of negative imaginary systems has been well established in the literature. However, the proofs of stability feedback interconnection which are used in some previous papers have a shortcoming due to a matrix inevitability issue. In this paper, we provide a new and correct Lyapunov-based proof of one such result and show that the result is still true.

  2. Lyapunov-based Stability of Feedback Interconnections of Negative Imaginary Systems

    KAUST Repository

    Ghallab, Ahmed G.; Mabrok, Mohamed; Petersen, Ian R.

    2017-01-01

    Feedback control systems using sensors and actuators such as piezoelectric sensors and actuators, micro-electro-mechanical systems (MEMS) sensors and opto-mechanical sensors, are allowing new advances in designing such high precision technologies. The negative imaginary control systems framework allows for robust control design for such high precision systems in the face of uncertainties due to unmodelled dynamics. The stability of the feedback interconnection of negative imaginary systems has been well established in the literature. However, the proofs of stability feedback interconnection which are used in some previous papers have a shortcoming due to a matrix inevitability issue. In this paper, we provide a new and correct Lyapunov-based proof of one such result and show that the result is still true.

  3. Direct Liquid Evaporation Chemical Vapor Deposition(DLE-CVD) of Nickel, Manganese and Copper-Based Thin Films for Interconnects in Three-Dimensional Microelectronic Systems

    OpenAIRE

    Li, Kecheng

    2016-01-01

    Electrical interconnects are an intrinsic part of any electronic system. These interconnects have to perform reliably under a wide range of environmental conditions and survive stresses induced from thermal, mechanical, corrosive and electrical factors. Semiconductor technology is predominantly planar in nature, posing a severe limitation to the degree of device integrations into systems such as micro-processors or memories. 3D transistor FinFET (Fin type Field Effect Transistors) has been us...

  4. HVDC interconnection submarine link in Mediterranean Sea

    International Nuclear Information System (INIS)

    Manzoni, Giancarlo; Cova, Bruno; Pincella, Claudio; Rebolini, Massimo; Ricci, Paolo

    2005-01-01

    The technology evolution of direct current energy transmission offer new perspectives for the exchange of energy with South side of Mediterranean Area: for Italy are new opportunity for energy import [it

  5. Knowledge Access in Rural Inter-connected Areas Network ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Knowledge Access in Rural Inter-connected Areas Network (KariaNet) - Phase II ... the existing network to include two thematic networks on food security and rural ... Woman conquering male business in Yemen : Waleya's micro-enterprise.

  6. Knowledge Access in Rural Inter-connected Areas Network ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Knowledge Access in Rural Inter-connected Areas Network (KariaNet) - Phase II ... poor by sharing innovations, best practices and indigenous knowledge using ... A third thematic network - on knowledge management strategies - will play an ...

  7. Graduate studies on optoelectronics in Argentina: an experience

    Science.gov (United States)

    Fernández, Juan C.; Garea, María. T.; Isaurralde, Silvia; Perez, Liliana I.; Raffo, Carlos A.

    2014-07-01

    The number of graduate programs in Optoelectronics in Argentina is scarce. The current Optics and Photonics Education Directory lists only three programs. One of them was launched in 2001 in the Facultad de Ingeniería (College of Engineering), Universidad de Buenos Aires (UBA). This was the first graduate program in the field, leading to a Master Degree in Optoelectronics. This decision arose from the demand of telecommunications industries and several estate- or private-funded research institutions working with us in the fields of lasers, optics, remote sensing, etc. A great bonus was the steady work, during several decades, of research groups in the College on the development of different type of lasers and optical non destructive tests and their engineering applications. As happened in many engineering graduate programs in Argentina at that time, few non full-time students could finish their studies, which called for 800 hours of traditional lecture-recitation classes, and the Master Thesis. In recent years Argentine Education authorities downsized the Master programs to 700 hours of blended learning and we redesigned the Graduate Optoelectronic Engineering Program to meet the challenge, dividing it in two successive one year programs, the first aimed at a professional training for almost immediate insertion in the labor market (called Especialización en Ingeniería Optoelectrónica), and the second (called Maestría en Ingeniería Optoelectrónica y Fotónica) aimed at a more academic and research target to comply with the UBA standards for Master degrees. The present work is a presentation of the new program design, which has begun in the current year.

  8. Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

    Science.gov (United States)

    Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

    2015-05-01

    The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

  9. Production and characterisation of SLID interconnected n-in-p pixel modules with 75 μm thin silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Andricek, L. [Halbleiterlabor der Max-Planck-Gesellschaft, Otto Hahn Ring 6, D-81739 München (Germany); Beimforde, M.; Macchiolo, A.; Moser, H.-G. [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany); Nisius, R., E-mail: Richard.Nisius@mpp.mpg.de [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany); Richter, R.H. [Halbleiterlabor der Max-Planck-Gesellschaft, Otto Hahn Ring 6, D-81739 München (Germany); Terzo, S.; Weigell, P. [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany)

    2014-09-11

    The performance of pixel modules built from 75 μm thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 μm thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of 10{sup 16}n{sub eq}/cm{sup 2}.

  10. A proposed holistic approach to on-chip, off-chip, test, and package interconnections

    Science.gov (United States)

    Bartelink, Dirk J.

    1998-11-01

    The term interconnection has traditionally implied a `robust' connection from a transistor or a group of transistors in an IC to the outside world, usually a PC board. Optimum system utilization is done from outside the IC. As an alternative, this paper addresses `unimpeded' transistor-to-transistor interconnection aimed at reaching the high circuit densities and computational capabilities of neighboring IC's. In this view, interconnections are not made to some human-centric place outside the IC world requiring robustness—except for system input and output connections. This unimpeded interconnect style is currently available only through intra-chip signal traces in `system-on-a-chip' implementations, as exemplified by embedded DRAMs. Because the traditional off-chip penalty in performance and wiring density is so large, a merging of complex process technologies is the only option today. It is suggested that, for system integration to move forward, the traditional robustness requirement inherited from conventional packaging interconnect and IC manufacturing test must be discarded. Traditional system assembly from vendor parts requires robustness under shipping, inspection and assembly. The trend toward systems on a chip signifies willingness by semiconductor companies to design and fabricate whole systems in house, so that `in-house' chip-to-chip assembly is not beyond reach. In this scenario, bare chips never leave the controlled environment of the IC fabricator while the two major contributors to off-chip signal penalty, ESD protection and the need to source a 50-ohm test head, are avoided. With in-house assembly, ESD protection can be eliminated with the precautions already familiar in plasma etching. Test interconnection impacts the fundamentals of IC manufacturing, particularly with clock speeds approaching 1GHz, and cannot be an afterthought. It should be an integral part of the chip-to-chip interconnection bandwidth optimization, because—as we must

  11. Wonder of nanotechnology quantum optoelectronic devices and applications

    CERN Document Server

    Razeghi, Manijeh; von Klitzing, Klaus

    2013-01-01

    When you look closely, Nature is nanotechnology at its finest. From a single cell, a factory all by itself, to complex systems, such as the nervous system or the human eye, each is composed of specialized nanostructures that exist to perform a specific function. This same beauty can be mirrored when we interact with the tiny physical world that is the realm of quantum mechanics.The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, edited by Manijeh Razeghi, Leo Esaki, and Klaus von Klitzing focuses on the application of nanotechnology to modern semiconductor optoelectr

  12. SPEKTROP DPU: optoelectronic platform for fast multispectral imaging

    Science.gov (United States)

    Graczyk, Rafal; Sitek, Piotr; Stolarski, Marcin

    2010-09-01

    In recent years it easy to spot and increasing need of high-quality Earth imaging in airborne and space applications. This is due fact that government and local authorities urge for up to date topological data for administrative purposes. On the other hand, interest in environmental sciences, push for ecological approach, efficient agriculture and forests management are also heavily supported by Earth images in various resolutions and spectral ranges. "SPEKTROP DPU: Opto-electronic platform for fast multi-spectral imaging" paper describes architectural datails of data processing unit, part of universal and modular platform that provides high quality imaging functionality in aerospace applications.

  13. Optoelectronic imaging of speckle using image processing method

    Science.gov (United States)

    Wang, Jinjiang; Wang, Pengfei

    2018-01-01

    A detailed image processing of laser speckle interferometry is proposed as an example for the course of postgraduate student. Several image processing methods were used together for dealing with optoelectronic imaging system, such as the partial differential equations (PDEs) are used to reduce the effect of noise, the thresholding segmentation also based on heat equation with PDEs, the central line is extracted based on image skeleton, and the branch is removed automatically, the phase level is calculated by spline interpolation method, and the fringe phase can be unwrapped. Finally, the imaging processing method was used to automatically measure the bubble in rubber with negative pressure which could be used in the tire detection.

  14. Design of optoelectronic system for optical diffusion tomography

    Directory of Open Access Journals (Sweden)

    Erakhtin Igor

    2017-01-01

    Full Text Available This article explores issues connected with the circuit design of a device for optical diffusion tomography, which we are currently designing. We plan to use the device in experimental studies for the development of a faster method of brain hematoma detection. We reviewed currently existing methods for emergency diagnosis of hematomas, primarily the Infrascanner model 2000, for which we identified weaknesses, and outlined suggestions for improvements. This article describes the method of scanning tissues based on a triangulated arrangement of sources and receivers of optical radiation, and it discusses the optoelectronic system that implements that principle.

  15. All-optoelectronic continuous wave THz imaging for biomedical applications

    International Nuclear Information System (INIS)

    Siebert, Karsten J; Loeffler, Torsten; Quast, Holger; Thomson, Mark; Bauer, Tobias; Leonhardt, Rainer; Czasch, Stephanie; Roskos, Hartmut G

    2002-01-01

    We present an all-optoelectronic THz imaging system for ex vivo biomedical applications based on photomixing of two continuous-wave laser beams using photoconductive antennas. The application of hyperboloidal lenses is discussed. They allow for f-numbers less than 1/2 permitting better focusing and higher spatial resolution compared to off-axis paraboloidal mirrors whose f-numbers for practical reasons must be larger than 1/2. For a specific histological sample, an analysis of image noise is discussed

  16. Interconnected Power Systems Mexico-Guatemala financed by BID

    International Nuclear Information System (INIS)

    Martinez, Veronica

    2003-01-01

    The article describes the plans for the interconnection of the electric power systems of Guatemala, El Salvador, Honduras, Nicaragua, Costa Rica, Panama and Mexico within the project Plan Pueba Panama. The objective of the interconnection is to create an electric market in the region that contributes to reduce costs and prices. The project will receive a financing of $37.5 millions of US dollars from the Banco Intrameramericano de Desarrollo (BID)

  17. Robust design of head interconnect for hard disk drive

    Science.gov (United States)

    Gao, X. K.; Liu, Q. H.; Liu, Z. J.

    2005-05-01

    Design of head interconnect is one of the important issues for hard disk drives with higher data rate and storage capacity. The impedance of interconnect and electromagnetic coupling influence the quality level of data communication. Thus an insightful study on how the trace configuration affects the impedance and crosstalk is necessary. An effective design approach based on Taguchi's robust design method is employed therefore in an attempt to realize impedance matching and crosstalk minimization with the effects of uncontrollable sources taken into consideration.

  18. Monolithic microwave integrated circuits: Interconnections and packaging considerations

    Science.gov (United States)

    Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.

    1984-01-01

    Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

  19. Monolithic microwave integrated circuits: Interconnections and packaging considerations

    Science.gov (United States)

    Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.

    Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

  20. Load shedding scheme in the south/southeastern interconnected system

    Energy Technology Data Exchange (ETDEWEB)

    Vieira Filho, Xisto; Couri, J J.G.; Gomes, P; Almeida, P C [ELETROBRAS, Rio de Janeiro, RJ (Brazil)

    1988-12-31

    This paper presents some characteristics of the Brazilian interconnected system and discusses the load shedding scheme in its different stages considering the beginning of operation of the Itaipu power plant. The present situation of the South and Southeastern load shedding scheme combination is also commented. Finally, the interconnected system evolution and the effects on the load shedding schemes are discussed. 4 refs., 5 figs., 2 tabs.

  1. Beyond the Internet of Things everything interconnected

    CERN Document Server

    Mastorakis, George; Mavromoustakis, Constandinos; Pallis, Evangelos

    2017-01-01

    The major subjects of the book cover modeling, analysis and efficient management of information in Internet of Everything (IoE) applications and architectures. As the first book of its kind, it addresses the major new technological developments in the field and will reflect current research trends, as well as industry needs. It comprises of a good balance between theoretical and practical issues, covering case studies, experience and evaluation reports and best practices in utilizing IoE applications. It also provides technical/scientific information about various aspects of IoE technologies, ranging from basic concepts to research grade material, including future directions.

  2. Optoelectronic polarimeter controlled by a graphical user interface of Matlab

    International Nuclear Information System (INIS)

    Vilardy, J M; Torres, R; Jimenez, C J

    2017-01-01

    We show the design and implementation of an optical polarimeter using electronic control. The polarimeter has a software with a graphical user interface (GUI) that controls the optoelectronic setup and captures the optical intensity measurement, and finally, this software evaluates the Stokes vector of a state of polarization (SOP) by means of the synchronous detection of optical waves. The proposed optoelectronic polarimeter can determine the Stokes vector of a SOP in a rapid and efficient way. Using the polarimeter proposed in this paper, the students will be able to observe (in an optical bench) and understand the different interactions of the SOP when the optical waves pass through to the linear polarizers and retarder waves plates. The polarimeter prototype could be used as a main tool for the students in order to learn the theory and experimental aspects of the SOP for optical waves via the Stokes vector measurement. The proposed polarimeter controlled by a GUI of Matlab is more attractive and suitable to teach and to learn the polarization of optical waves. (paper)

  3. Growing perovskite into polymers for easy-processable optoelectronic devices

    Science.gov (United States)

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  4. Bioinspired Transparent Laminated Composite Film for Flexible Green Optoelectronics.

    Science.gov (United States)

    Lee, Daewon; Lim, Young-Woo; Im, Hyeon-Gyun; Jeong, Seonju; Ji, Sangyoon; Kim, Yong Ho; Choi, Gwang-Mun; Park, Jang-Ung; Lee, Jung-Yong; Jin, Jungho; Bae, Byeong-Soo

    2017-07-19

    Herein, we report a new version of a bioinspired chitin nanofiber (ChNF) transparent laminated composite film (HCLaminate) made of siloxane hybrid materials (hybrimers) reinforced with ChNFs, which mimics the nanofiber-matrix structure of hierarchical biocomposites. Our HCLaminate is produced via vacuum bag compressing and subsequent UV-curing of the matrix resin-impregnated ChNF transparent paper (ChNF paper). It is worthwhile to note that this new type of ChNF-based transparent substrate film retains the strengths of the original ChNF paper and compensates for ChNF paper's drawbacks as a flexible transparent substrate. As a result, compared with high-performance synthetic plastic films, such as poly(ethylene terephthalate), poly(ether sulfone), poly(ethylene naphthalate), and polyimide, our HCLaminate is characterized to exhibit extremely smooth surface topography, outstanding optical clarity, high elastic modulus, high dimensional stability, etc. To prove our HCLaminate as a substrate film, we use it to fabricate flexible perovskite solar cells and a touch-screen panel. As far as we know, this work is the first to demonstrate flexible optoelectronics, such as flexible perovskite solar cells and a touch-screen panel, actually fabricated on a composite film made of ChNF. Given its desirable macroscopic properties, we envision our HCLaminate being utilized as a transparent substrate film for flexible green optoelectronics.

  5. Microfluidic optoelectronic sensor for salivary diagnostics of stomach cancer.

    Science.gov (United States)

    Zilberman, Yael; Sonkusale, Sameer R

    2015-05-15

    We present a microfluidic optoelectronic sensor for saliva diagnostics with a potential application for non-invasive early diagnosis of stomach cancer. Stomach cancer is the second most common cause of cancer-related deaths in the world. The primary identified cause is infection by a gram-negative bacterium Helicobacter pylori. These bacteria secrete the enzyme urease that converts urea into carbon dioxide (CO2) and ammonia (NH3), leading to their elevated levels in breath and body fluids. The proposed optoelectronic sensor will detect clinically relevant levels of CO2 and NH3 in saliva that can potentially be used for early diagnosis of stomach cancer. The sensor is composed of the embedded in a microfluidic device array of microwells filled with ion-exchange polymer microbeads doped with various organic dyes. The optical response of this unique highly diverse sensor is monitored over a broad spectrum, which provides a platform for cross-reactive sensitivity and allows detection of CO2 and NH3 in saliva at ppm levels. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Development of an optoelectronic holographic platform for otolaryngology applications

    Science.gov (United States)

    Harrington, Ellery; Dobrev, Ivo; Bapat, Nikhil; Flores, Jorge Mauricio; Furlong, Cosme; Rosowski, John; Cheng, Jeffery Tao; Scarpino, Chris; Ravicz, Michael

    2010-08-01

    In this paper, we present advances on our development of an optoelectronic holographic computing platform with the ability to quantitatively measure full-field-of-view nanometer-scale movements of the tympanic membrane (TM). These measurements can facilitate otologists' ability to study and diagnose hearing disorders in humans. The holographic platform consists of a laser delivery system and an otoscope. The control software, called LaserView, is written in Visual C++ and handles communication and synchronization between hardware components. It provides a user-friendly interface to allow viewing of holographic images with several tools to automate holography-related tasks and facilitate hardware communication. The software uses a series of concurrent threads to acquire images, control the hardware, and display quantitative holographic data at video rates and in two modes of operation: optoelectronic holography and lensless digital holography. The holographic platform has been used to perform experiments on several live and post-mortem specimens, and is to be deployed in a medical research environment with future developments leading to its eventual clinical use.

  7. Development of a thin film solar cell interconnect for the PowerSphere concept

    International Nuclear Information System (INIS)

    Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig H.; Lin, John K.; Scarborough, Stephen E.; Curtis, Henry B.; Kerslake, Thomas W.; Peterson, Todd T.

    2005-01-01

    Progressive development of microsatellite technologies has resulted in increased demand for lightweight electrical power subsystems including solar arrays. The use of thin film photovoltaics has been recognized as a key solution to meet the power needs. The lightweight cells can generate sufficient power and still meet critical mass requirements. Commercially available solar cells produced on lightweight substrates are being studied as an option to fulfill the power needs. The commercially available solar cells are relatively inexpensive and have a high payoff potential. Commercially available thin film solar cells are primarily being produced for terrestrial applications. The need to convert the solar cell from a terrestrial to a space compatible application is the primary challenge. Solar cell contacts, grids and interconnects need to be designed to be atomic oxygen resistant and withstand rapid thermal cycling environments. A mechanically robust solar cell interconnect is also required in order to withstand handling during fabrication and survive during launch. The need to produce the solar cell interconnects has been identified as a primary goal of the PowerSphere program and is the topic of this paper. Details of the trade study leading to the final design involving the solar cell wrap around contact, flex blanket, welding process, and frame will be presented at the conference

  8. Nano/CMOS architectures using a field-programmable nanowire interconnect

    International Nuclear Information System (INIS)

    Snider, Gregory S; Williams, R Stanley

    2007-01-01

    A field-programmable nanowire interconnect (FPNI) enables a family of hybrid nano/CMOS circuit architectures that generalizes the CMOL (CMOS/molecular hybrid) approach proposed by Strukov and Likharev, allowing for simpler fabrication, more conservative process parameters, and greater flexibility in the choice of nanoscale devices. The FPNI improves on a field-programmable gate array (FPGA) architecture by lifting the configuration bit and associated components out of the semiconductor plane and replacing them in the interconnect with nonvolatile switches, which decreases both the area and power consumption of the circuit. This is an example of a more comprehensive strategy for improving the efficiency of existing semiconductor technology: placing a level of intelligence and configurability in the interconnect can have a profound effect on integrated circuit performance, and can be used to significantly extend Moore's law without having to shrink the transistors. Compilation of standard benchmark circuits onto FPNI chip models shows reduced area (8 x to 25 x), reduced power, slightly lower clock speeds, and high defect tolerance-an FPNI chip with 20% defective junctions and 20% broken nanowires has an effective yield of 75% with no significant slowdown along the critical path, compared to a defect-free chip. Simulations show that the density and power improvements continue as both CMOS and nano fabrication parameters scale down, although the maximum clock rate decreases due to the high resistance of very small (<10 nm) metallic nanowires

  9. Multi-gigabit optical interconnects for next-generation on-board digital equipment

    Science.gov (United States)

    Venet, Norbert; Favaro, Henri; Sotom, Michel; Maignan, Michel; Berthon, Jacques

    2017-11-01

    Parallel optical interconnects are experimentally assessed as a technology that may offer the high-throughput data communication capabilities required to the next-generation on-board digital processing units. An optical backplane interconnect was breadboarded, on the basis of a digital transparent processor that provides flexible connectivity and variable bandwidth in telecom missions with multi-beam antenna coverage. The unit selected for the demonstration required that more than tens of Gbit/s be supported by the backplane. The demonstration made use of commercial parallel optical link modules at 850 nm wavelength, with 12 channels running at up to 2.5 Gbit/s. A flexible optical fibre circuit was developed so as to route board-to-board connections. It was plugged to the optical transmitter and receiver modules through 12-fibre MPO connectors. BER below 10-14 and optical link budgets in excess of 12 dB were measured, which would enable to integrate broadcasting. Integration of the optical backplane interconnect was successfully demonstrated by validating the overall digital processor functionality.

  10. Reactive power interconnection requirements for PV and wind plants : recommendations to NERC.

    Energy Technology Data Exchange (ETDEWEB)

    McDowell, Jason (General Electric, Schenectady, NY); Walling, Reigh (General Electric, Schenectady, NY); Peter, William (SunPower, Richmond, CA); Von Engeln, Edi (NV Energy, Reno, NV); Seymour, Eric (AEI, Fort Collins, CO); Nelson, Robert (Siemens Wind Turbines, Orlando, FL); Casey, Leo (Satcon, Boston, MA); Ellis, Abraham; Barker, Chris. (SunPower, Richmond, CA)

    2012-02-01

    Voltage on the North American bulk system is normally regulated by synchronous generators, which typically are provided with voltage schedules by transmission system operators. In the past, variable generation plants were considered very small relative to conventional generating units, and were characteristically either induction generator (wind) or line-commutated inverters (photovoltaic) that have no inherent voltage regulation capability. However, the growing level of penetration of non-traditional renewable generation - especially wind and solar - has led to the need for renewable generation to contribute more significantly to power system voltage control and reactive power capacity. Modern wind-turbine generators, and increasingly PV inverters as well, have considerable dynamic reactive power capability, which can be further enhanced with other reactive support equipment at the plant level to meet interconnection requirements. This report contains a set of recommendations to the North-America Electricity Reliability Corporation (NERC) as part of Task 1-3 (interconnection requirements) of the Integration of Variable Generation Task Force (IVGTF) work plan. The report discusses reactive capability of different generator technologies, reviews existing reactive power standards, and provides specific recommendations to improve existing interconnection standards.

  11. Optoelectronic switch matrix as a look-up table for residue arithmetic.

    Science.gov (United States)

    Macdonald, R I

    1987-10-01

    The use of optoelectronic matrix switches to perform look-up table functions in residue arithmetic processors is proposed. In this application, switchable detector arrays give the advantage of a greatly reduced requirement for optical sources by comparison with previous optoelectronic residue processors.

  12. Spectroscopic imaging technologies for online food safety and sanitation inspection

    Science.gov (United States)

    The Environmental Microbial and Food Safety Laboratory, ARS, USDA is one of the leading groups for the development of optoelectronic sensing technologies and methodologies for food quality, safety, and sanitation inspection. High throughput hyperspectral and multispectral imaging techniques use Ram...

  13. Architecture-Level Exploration of Alternative Interconnection Schemes Targeting 3D FPGAs: A Software-Supported Methodology

    Directory of Open Access Journals (Sweden)

    Kostas Siozios

    2008-01-01

    Full Text Available In current reconfigurable architectures, the interconnection structures increasingly contribute more to the delay and power consumption. The demand for increased clock frequencies and logic density (smaller area footprint makes the problem even more important. Three-dimensional (3D architectures are able to alleviate this problem by accommodating a number of functional layers, each of which might be fabricated in different technology. However, the benefits of such integration technology have not been sufficiently explored yet. In this paper, we propose a software-supported methodology for exploring and evaluating alternative interconnection schemes for 3D FPGAs. In order to support the proposed methodology, three new CAD tools were developed (part of the 3D MEANDER Design Framework. During our exploration, we study the impact of vertical interconnection between functional layers in a number of design parameters. More specifically, the average gains in operation frequency, power consumption, and wirelength are 35%, 32%, and 13%, respectively, compared to existing 2D FPGAs with identical logic resources. Also, we achieve higher utilization ratio for the vertical interconnections compared to existing approaches by 8% for designing 3D FPGAs, leading to cheaper and more reliable devices.

  14. Electronic interconnects and devices with topological surface states and methods for fabricating same

    Science.gov (United States)

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2016-05-03

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  15. 76 FR 16405 - Notice of Attendance at PJM INterconnection, L.L.C., Meetings

    Science.gov (United States)

    2011-03-23

    ... INterconnection, L.L.C., Meetings The Federal Energy Regulatory Commission (Commission) hereby gives notice that members of the Commission and Commission staff may attend upcoming PJM Interconnection, L.L.C., (PJM...: Docket No. EL05-121, PJM Interconnection, L.L.C. Docket No. ER06-456, PJM Interconnection, L.L.C. Docket...

  16. Electrode and interconnect for miniature fuel cells using direct methanol feed

    Science.gov (United States)

    Narayanan, Sekharipuram R. (Inventor); Valdez, Thomas I. (Inventor); Clara, Filiberto (Inventor)

    2004-01-01

    An improved system for interconnects in a fuel cell. In one embodiment, the membranes are located in parallel with one another, and current flow between them is facilitated by interconnects. In another embodiment, all of the current flow is through the interconnects which are located on the membranes. The interconnects are located between two electrodes.

  17. Electronic interconnects and devices with topological surface states and methods for fabricating same

    Energy Technology Data Exchange (ETDEWEB)

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2017-04-04

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  18. 6th conference on Advances in Optoelectronics and Micro/nano-optics

    International Nuclear Information System (INIS)

    2017-01-01

    The 6th Conference on Advances in Optoelectronics and Micro/nano-optics (AOM 2017) Nanjing, China April 23 - 26, 2017 Conference Co-Chairs: Yiping Cui - Southeast University, China Xiaocong Yuan - Shenzhen University, China Shining Zhu - Nanjing University, China WELCOME Journal of physics: Conference Series is publishing a volume of conference proceedings that contains a selection of papers presented at the 6 th Conference on Advances in Optoelectronics and Micro/nano-optics (AOM 2017), which is an OSA topical meeting that started in 2009. AOM 2017, organized by The Optical Society of America, Southeast University, and Jiangsu Optical Society, was successfully held at Nanjing, China from April 23 th -26 th , 2017. It aims to bring together leading academic scientists, researchers and scholars to exchange and share their experience and research results on all aspects of optoelectronics and micro/nano-optics, and to discuss the practical challenges encountered and the solutions adopted. Located in Yangtze River Delta area and the center of east China, Nanjing is the capital of Jiangsu province and the second largest city in the east China region, turned out to be an ideal meeting place for domestic and overseas participants of this international conference. The conference program included plenary talks, invited talks, oral and poster contributions. From numerous submissions, 64 of the most promising and IOP-relevant contributions were included in this volume. The submissions present original ideas or results of general significance, supported by clear reasoning, compelling evidence relevant to the research. The authors state clearly the problems and the significance of their research to theory and practice. Being a successful conference, this event gathered more than 300 qualified and high-level researchers and experts, which created a good platform for worldwide researchers and engineers to enjoy the academic communication. Taking advantage of this opportunity, we

  19. Microcoil Spring Interconnects for Ceramic Grid Array Integrated Circuits

    Science.gov (United States)

    Strickland, S. M.; Hester, J. D.; Gowan, A. K.; Montgomery, R. K.; Geist, D. L.; Blanche, J. F.; McGuire, G. D.; Nash, T. S.

    2011-01-01

    As integrated circuit miniaturization trends continue, they drive the need for smaller higher input/output (I/O) packages. Hermetically sealed ceramic area array parts are the package of choice by the space community for high reliability space flight electronic hardware. Unfortunately, the coefficient of thermal expansion mismatch between the ceramic area array package and the epoxy glass printed wiring board limits the life of the interconnecting solder joint. This work presents the results of an investigation by Marshall Space Flight Center into a method to increase the life of this second level interconnection by the use of compliant microcoil springs. The design of the spring and its attachment process are presented along with thermal cycling results of microcoil springs (MCS) compared with state-of-the-art ball and column interconnections. Vibration testing has been conducted on MCS and high lead column parts. Radio frequency simulation and measurements have been made and the MCS has been modeled and a stress analysis performed. Thermal cycling and vibration testing have shown MCS interconnects to be significantly more reliable than solder columns. Also, MCS interconnects are less prone to handling damage than solder columns. Future work that includes shock testing, incorporation into a digital signal processor board, and process evaluation of expansion from a 400 I/O device to a device with over 1,100 I/O is identified.

  20. Value of Improved Wind Power Forecasting in the Western Interconnection (Poster)

    Energy Technology Data Exchange (ETDEWEB)

    Hodge, B.

    2013-12-01

    Wind power forecasting is a necessary and important technology for incorporating wind power into the unit commitment and dispatch process. It is expected to become increasingly important with higher renewable energy penetration rates and progress toward the smart grid. There is consensus that wind power forecasting can help utility operations with increasing wind power penetration; however, there is far from a consensus about the economic value of improved forecasts. This work explores the value of improved wind power forecasting in the Western Interconnection of the United States.

  1. Analytical Model based on Green Criteria for Optical Backbone Network Interconnection

    DEFF Research Database (Denmark)

    Gutierrez Lopez, Jose Manuel; Riaz, M. Tahir; Pedersen, Jens Myrup

    2011-01-01

    Key terms such as Global warming, Green House Gas emissions, or Energy efficiency are currently on the scope of scientific research. Regarding telecommunications networks, wireless applications, routing protocols, etc. are being designed following this new “Green” trend. This work contributes...... to the evaluation of the environmental impact of networks from physical interconnection point of view. Networks deployment, usage, and disposal are analyzed as contributing elements to ICT’s (Information and Communications Technology) CO2 emissions. This paper presents an analytical model for evaluating...

  2. The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

    International Nuclear Information System (INIS)

    Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

    2016-01-01

    Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10"−"3 Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

  3. The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zubizarreta, C., E-mail: cristina.zubizarreta@tekniker.es [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); G-Berasategui, E.; Ciarsolo, I.; Barriga, J. [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); Gaspar, D.; Martins, R.; Fortunato, E. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa (Portugal)

    2016-09-01

    Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10{sup −3} Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

  4. Generation adequacy and transmission interconnection in regional electricity markets

    International Nuclear Information System (INIS)

    Cepeda, Mauricio; Saguan, Marcelo; Finon, Dominique; Pignon, Virginie

    2009-01-01

    The power system capacity adequacy has public good features that cannot be entirely solved by electricity markets. Regulatory intervention is then necessary and established methods have been used to assess adequacy and help regulators to fix this market failure. In regional electricity markets, transmission interconnections play an important role in contributing to adequacy. However, the adequacy problem and related policy are typically considered at a national level. This paper presents a simple model to study how the interconnection capacity interacts with generation adequacy. First results indicate that increasing interconnection capacity between systems improves adequacy up to a certain level; further increases do not procure additional adequacy improvements. Furthermore, besides adequacy improvement, increasing transmission capacity under asymmetric adequacy criteria or national system characteristics could create several concerns about externalities. These results imply that regional coordination of national adequacy policies is essential to internalise adequacy of cross-border effects.

  5. Performance of WCN diffusion barrier for Cu multilevel interconnects

    Science.gov (United States)

    Lee, Seung Yeon; Ju, Byeong-Kwon; Kim, Yong Tae

    2018-04-01

    The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H2 gases and has a very low resistivity of 100 µΩ cm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 °C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 °C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive.

  6. Net Metering and Interconnection Procedures-- Incorporating Best Practices

    Energy Technology Data Exchange (ETDEWEB)

    Jason Keyes, Kevin Fox, Joseph Wiedman, Staff at North Carolina Solar Center

    2009-04-01

    State utility commissions and utilities themselves are actively developing and revising their procedures for the interconnection and net metering of distributed generation. However, the procedures most often used by regulators and utilities as models have not been updated in the past three years, in which time most of the distributed solar facilities in the United States have been installed. In that period, the Interstate Renewable Energy Council (IREC) has been a participant in more than thirty state utility commission rulemakings regarding interconnection and net metering of distributed generation. With the knowledge gained from this experience, IREC has updated its model procedures to incorporate current best practices. This paper presents the most significant changes made to IREC’s model interconnection and net metering procedures.

  7. All-zigzag graphene nanoribbons for planar interconnect application

    Science.gov (United States)

    Chen, Po-An; Chiang, Meng-Hsueh; Hsu, Wei-Chou

    2017-07-01

    A feasible "lightning-shaped" zigzag graphene nanoribbon (ZGNR) structure for planar interconnects is proposed. Based on the density functional theory and non-equilibrium Green's function, the electron transport properties are evaluated. The lightning-shaped structure increases significantly the conductance of the graphene interconnect with an odd number of zigzag chains. This proposed technique can effectively utilize the linear I-V characteristic of asymmetric ZGNRs for interconnect application. Variability study accounting for width/length variation and the edge effect is also included. The transmission spectra, transmission eigenstates, and transmission pathways are analyzed to gain the physical insights. This lightning-shaped ZGNR enables all 2D material-based devices and circuits on flexible and transparent substrates.

  8. Mechanical response of spiral interconnect arrays for highly stretchable electronics

    KAUST Repository

    Qaiser, Nadeem

    2017-11-21

    A spiral interconnect array is a commonly used architecture for stretchable electronics, which accommodates large deformations during stretching. Here, we show the effect of different geometrical morphologies on the deformation behavior of the spiral island network. We use numerical modeling to calculate the stresses and strains in the spiral interconnects under the prescribed displacement of 1000 μm. Our result shows that spiral arm elongation depends on the angular position of that particular spiral in the array. We also introduce the concept of a unit-cell, which fairly replicates the deformation mechanism for full complex hexagon, diamond, and square shaped arrays. The spiral interconnects which are axially connected between displaced and fixed islands attain higher stretchability and thus experience the maximum deformations. We perform tensile testing of 3D printed replica and find that experimental observations corroborate with theoretical study.

  9. Bi cluster-assembled interconnects produced using SU8 templates

    International Nuclear Information System (INIS)

    Partridge, J G; Matthewson, T; Brown, S A

    2007-01-01

    Bi clusters with an average diameter of 25 nm have been deposited from an inert gas aggregation source and assembled into thin-film interconnects which are formed between planar electrical contacts and supported on Si substrates passivated with Si 3 N 4 or thermally grown oxide. A layer of SU8 (a negative photoresist based on EPON SU-8 epoxy resin) is patterned using optical or electron-beam lithography, and it defines the position and dimensions of the cluster film. The conduction between the contacts is monitored throughout the deposition/assembly process, and subsequent I(V) characterization is performed in situ. Bi cluster-assembled interconnects have been fabricated with nanoscale widths and with up to 1:1 thickness:width aspect ratios. The conductivity of these interconnects has been increased, post-deposition, using a simple thermal annealing process

  10. Carbon nanotube based VLSI interconnects analysis and design

    CERN Document Server

    Kaushik, Brajesh Kumar

    2015-01-01

    The brief primarily focuses on the performance analysis of CNT based interconnects in current research scenario. Different CNT structures are modeled on the basis of transmission line theory. Performance comparison for different CNT structures illustrates that CNTs are more promising than Cu or other materials used in global VLSI interconnects. The brief is organized into five chapters which mainly discuss: (1) an overview of current research scenario and basics of interconnects; (2) unique crystal structures and the basics of physical properties of CNTs, and the production, purification and applications of CNTs; (3) a brief technical review, the geometry and equivalent RLC parameters for different single and bundled CNT structures; (4) a comparative analysis of crosstalk and delay for different single and bundled CNT structures; and (5) various unique mixed CNT bundle structures and their equivalent electrical models.

  11. Mechanical response of spiral interconnect arrays for highly stretchable electronics

    KAUST Repository

    Qaiser, Nadeem; Khan, S. M.; Nour, Maha A.; Rehman, M. U.; Rojas, J. P.; Hussain, Muhammad Mustafa

    2017-01-01

    A spiral interconnect array is a commonly used architecture for stretchable electronics, which accommodates large deformations during stretching. Here, we show the effect of different geometrical morphologies on the deformation behavior of the spiral island network. We use numerical modeling to calculate the stresses and strains in the spiral interconnects under the prescribed displacement of 1000 μm. Our result shows that spiral arm elongation depends on the angular position of that particular spiral in the array. We also introduce the concept of a unit-cell, which fairly replicates the deformation mechanism for full complex hexagon, diamond, and square shaped arrays. The spiral interconnects which are axially connected between displaced and fixed islands attain higher stretchability and thus experience the maximum deformations. We perform tensile testing of 3D printed replica and find that experimental observations corroborate with theoretical study.

  12. Optoelectronic investigation of nanodiamond interactions with human blood

    Science.gov (United States)

    Ficek, M.; Wróbel, M. S.; Wasowicz, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    We present optoelectronic investigation of in vitro interactions of whole human blood with different nanodiamond biomarkers. Plasmo-chemical modifications of detonation nanodiamond particles gives the possibility for controlling their surface for biological applications. Optical investigations reveal the biological activity of nanodiamonds in blood dependent on its surface termination. We compare different types of nanodiamonds: commercial non-modified detonation nanodiamonds, and nanodiamonds modified by MW PACVD method with H2-termination, and chemically modified nanodiamond with O2-termination. The absorption spectra, and optical microscope investigations were conducted. The results indicate haemocompatibility of non-modified detonation nanodiamond as well as modified nanodiamonds, which enables their application for drug delivery, as well as sensing applications.

  13. Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

    Science.gov (United States)

    Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

    2016-11-15

    Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

  14. CuPc/C60 heterojunction thin film optoelectronic devices

    International Nuclear Information System (INIS)

    Murtaza, Imran; Karimov, Khasan S.; Qazi, Ibrahim

    2010-01-01

    The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C 60 /Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C 60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C 60 , where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. (semiconductor devices)

  15. Complete diagnostics of pyroactive structures for smart systems of optoelectronics

    Science.gov (United States)

    Bravina, Svetlana L.; Morozovsky, Nicholas V.

    1998-04-01

    The results of study of pyroelectric phenomena in ferroelectric materials for evidence of the possibility to embody the functions promising for creation of smart systems for optoelectronic applications are presented. Designing such systems requires the development of methods for non- destructive complete diagnostics preferably by developing the self-diagnostic ability inherent in materials with the features of smart/intelligent ones. The complex method of complete non-destructive qualification of pyroactive materials based on the method of dynamic photopyroelectric effect allows the determination of pyroelectric, piezoelectric, ferroelectric, dielectric and thermophysical characteristics. The measuring system which allows the study of these characteristics and also memory effects, switching effects, fatigue and degradation process, self-repair process and others is presented. Sample pyroactive system with increased intelligence, such as systems with built-in adaptive controllable domain structure promising for functional optics are developed and peculiarities of their characterization are discussed.

  16. Bridge technology report

    CERN Document Server

    2013-01-01

    Please note this is a Short Discount publication. As LANs have proliferated, new technologies and system concepts have come to the fore. One of the key issues is how to interconnect networks. One means of interconnection is to use a 'bridge'. Other competing technologies are repeaters, routers, and gateways. Bridges permit traffic isolation, connect network segments together and operate at the MAC layer. Further, because they operate at the MAC layer, they can handle a variety of protocols such as TCP/IP, SNA, and X.25. This report focuses on the specific technology of bridging two netw

  17. Optical Near-field Interactions and Forces for Optoelectronic Devices

    Science.gov (United States)

    Kohoutek, John Michael

    Throughout history, as a particle view of the universe began to take shape, scientists began to realize that these particles were attracted to each other and hence came up with theories, both analytical and empirical in nature, to explain their interaction. The interaction pair potential (empirical) and electromagnetics (analytical) theories, both help to explain not only the interaction between the basic constituents of matter, such as atoms and molecules, but also between macroscopic objects, such as two surfaces in close proximity. The electrostatic force, optical force, and Casimir force can be categorized as such forces. A surface plasmon (SP) is a collective motion of electrons generated by light at the interface between two mediums of opposite signs of dielectric susceptibility (e.g. metal and dielectric). Recently, surface plasmon resonance (SPR) has been exploited in many areas through the use of tiny antennas that work on similar principles as radio frequency (RF) antennas in optoelectronic devices. These antennas can produce a very high gradient in the electric field thereby leading to an optical force, similar in concept to the surface forces discussed above. The Atomic Force Microscope (AFM) was introduced in the 1980s at IBM. Here we report on its uses in measuring these aforementioned forces and fields, as well as actively modulating and manipulating multiple optoelectronic devices. We have shown that it is possible to change the far field radiation pattern of an optical antenna-integrated device through modification of the near-field of the device. This modification is possible through change of the local refractive index or reflectivity of the "hot spot" of the device, either mechanically or optically. Finally, we have shown how a mechanically active device can be used to detect light with high gain and low noise at room temperature. It is the aim of several of these integrated and future devices to be used for applications in molecular sensing

  18. Microstructure of III-N semiconductors related to their applications in optoelectronics

    Science.gov (United States)

    Leszczynski, M.; Czernetzki, R.; Sarzynski, M.; Krysko, M.; Targowski, G.; Prystawko, P.; Bockowski, M.; Grzegory, I.; Suski, T.; Domagala, J.; Porowski, S.

    2005-03-01

    There has been more than a decade since Shuji Nakamura from Japanese company Nichia constructed the first blue LED based on structure of (AlGaIn)N semiconductor and eight years since he made the first blue laser diode (LD). This work gives a survey on the current technological status with green/blue/violet/UV optoelectronics based on III-N semiconductors in relation with their microstructure. The following devices are presented: i) Low-power green and blue LEDs, ii) High-power LEDs targeting solid-state white lighting, iii) Low-power violet LDs for high definition DVD market, iv) High-power violet LDs, v) UV LEDs. The discussion will be focused on three main technological problems related to the microstructure of (AlGaIn)N layers in emitters based on III-N semiconductors: i) high density of dislocations in epitaxial layers of GaN on foreign substrates (sapphire, SiC, GaAs), ii), presence of strains, iii) atom segregation in ternary and quaternary compounds.

  19. Natural gas and electrical interconnections in the Mediterranean Basin

    International Nuclear Information System (INIS)

    Grenon, M.

    1992-01-01

    Intermediate and long term socio-economical and energetic scenarios have shown that mediterranean basin countries will know a great growth of energy demand, particularly power demand. The first part of this paper describes the main projects for the establishment of interconnected natural gas systems through Mediterranean sea, by pipelines (Algeria-Tunisia-Libya project, Algeria-Morocco-Spain project, Libya-Italy project). The second part describes the main projects of electrical networks with the establishment of undersea links between Spain and Morocco, and between Italy and Tunisia; beefing up the interconnections between the North African countries; and developing ties in the Near East (from Egypt to Turkey)

  20. EEG simulation by 2D interconnected chaotic oscillators

    International Nuclear Information System (INIS)

    Kubany, Adam; Mhabary, Ziv; Gontar, Vladimir

    2011-01-01

    Research highlights: → ANN of 2D interconnected chaotic oscillators is explored for EEG simulation. → An inverse problem solution (PRCGA) is proposed. → Good matching between the simulated and experimental EEG signals has been achieved. - Abstract: An artificial neuronal network composed by 2D interconnected chaotic oscillators is explored for brain waves (EEG) simulation. For the inverse problem solution a parallel real-coded genetic algorithm (PRCGA) is proposed. In order to conduct thorough comparison between the simulated and target signal characteristics, a spectrum analysis of the signals is undertaken. A good matching between the theoretical and experimental EEG signals has been achieved. Numerical results of calculations are presented and discussed.

  1. Fundamentals of reliability engineering applications in multistage interconnection networks

    CERN Document Server

    Gunawan, Indra

    2014-01-01

    This book presents fundamentals of reliability engineering with its applications in evaluating reliability of multistage interconnection networks. In the first part of the book, it introduces the concept of reliability engineering, elements of probability theory, probability distributions, availability and data analysis.  The second part of the book provides an overview of parallel/distributed computing, network design considerations, and more.  The book covers a comprehensive reliability engineering methods and its practical aspects in the interconnection network systems. Students, engineers, researchers, managers will find this book as a valuable reference source.

  2. Load Frequency Control of AC Microgrid Interconnected Thermal Power System

    Science.gov (United States)

    Lal, Deepak Kumar; Barisal, Ajit Kumar

    2017-08-01

    In this paper, a microgrid (MG) power generation system is interconnected with a single area reheat thermal power system for load frequency control study. A new meta-heuristic optimization algorithm i.e. Moth-Flame Optimization (MFO) algorithm is applied to evaluate optimal gains of the fuzzy based proportional, integral and derivative (PID) controllers. The system dynamic performance is studied by comparing the results with MFO optimized classical PI/PID controllers. Also the system performance is investigated with fuzzy PID controller optimized by recently developed grey wolf optimizer (GWO) algorithm, which has proven its superiority over other previously developed algorithm in many interconnected power systems.

  3. EEG simulation by 2D interconnected chaotic oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Kubany, Adam, E-mail: adamku@bgu.ac.i [Department of Industrial Engineering and Management, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel); Mhabary, Ziv; Gontar, Vladimir [Department of Industrial Engineering and Management, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel)

    2011-01-15

    Research highlights: ANN of 2D interconnected chaotic oscillators is explored for EEG simulation. An inverse problem solution (PRCGA) is proposed. Good matching between the simulated and experimental EEG signals has been achieved. - Abstract: An artificial neuronal network composed by 2D interconnected chaotic oscillators is explored for brain waves (EEG) simulation. For the inverse problem solution a parallel real-coded genetic algorithm (PRCGA) is proposed. In order to conduct thorough comparison between the simulated and target signal characteristics, a spectrum analysis of the signals is undertaken. A good matching between the theoretical and experimental EEG signals has been achieved. Numerical results of calculations are presented and discussed.

  4. Supplemental Information for New York State Standardized Interconnection Requirements

    Energy Technology Data Exchange (ETDEWEB)

    Ingram, Michael [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Narang, David J. [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Mather, Barry A. [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kroposki, Benjamin D. [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-10-24

    This document is intended to aid in the understanding and application of the New York State Standardized Interconnection Requirements (SIR) and Application Process for New Distributed Generators 5 MW or Less Connected in Parallel with Utility Distribution Systems, and it aims to provide supplemental information and discussion on selected topics relevant to the SIR. This guide focuses on technical issues that have to date resulted in the majority of utility findings within the context of interconnecting photovoltaic (PV) inverters. This guide provides background on the overall issue and related mitigation measures for selected topics, including substation backfeeding, anti-islanding and considerations for monitoring and controlling distributed energy resources (DER).

  5. Compact models and performance investigations for subthreshold interconnects

    CERN Document Server

    Dhiman, Rohit

    2014-01-01

    The book provides a detailed analysis of issues related to sub-threshold interconnect performance from the perspective of analytical approach and design techniques. Particular emphasis is laid on the performance analysis of coupling noise and variability issues in sub-threshold domain to develop efficient compact models. The proposed analytical approach gives physical insight of the parameters affecting the transient behavior of coupled interconnects. Remedial design techniques are also suggested to mitigate the effect of coupling noise. The effects of wire width, spacing between the wires, wi

  6. IM/DD vs. 4-PAM Using a 1550-nm VCSEL over Short-Range SMF/MMF Links for Optical Interconnects

    DEFF Research Database (Denmark)

    Karinou, Fotini; Rodes Lopez, Roberto; Prince, Kamau

    2013-01-01

    We experimentally compare the performance of 10.9-Gb/s IM/DD and 5-GBd 4-PAM modulation formats over 5-km SMF and 1-km MMF links, employing a commercially-available 1550-nm VCSEL as an enabling technology for use in optical interconnects.......We experimentally compare the performance of 10.9-Gb/s IM/DD and 5-GBd 4-PAM modulation formats over 5-km SMF and 1-km MMF links, employing a commercially-available 1550-nm VCSEL as an enabling technology for use in optical interconnects....

  7. The Advances, Challenges and Future Possibilities of Millimeter-Wave Chip-to-Chip Interconnections for Multi-Chip Systems

    Directory of Open Access Journals (Sweden)

    Amlan Ganguly

    2018-02-01

    Full Text Available With aggressive scaling of device geometries, density of manufacturing faults is expected to increase. Therefore, yield of complex Multi-Processor Systems-on-Chips (MP-SoCs will decrease due to higher probability of manufacturing defects especially, in dies with large area. Therefore, disintegration of large SoCs into smaller chips called chiplets will improve yield and cost of complex platform-based systems. This will also provide functional flexibility, modular scalability as well as the capability to integrate heterogeneous architectures and technologies in a single unit. However, with scaling of the number of chiplets in such a system, the shared resources in the system such as the interconnection fabric and memory modules will become performance bottlenecks. Additionally, the integration of heterogeneous chiplets operating at different frequencies and voltages can be challenging. State-of-the-art inter-chip communication requires power-hungry high-speed I/O circuits and data transfer over long wired traces on substrates. This increases energy consumption and latency while decreasing data bandwidth for chip-to-chip communication. In this paper, we explore the advances and the challenges of interconnecting a multi-chip system with millimeter-wave (mm-wave wireless interconnects from a variety of perspectives spanning multiple aspects of the wireless interconnection design. Our discussion on the recent advances include aspects such as interconnection topology, physical layer, Medium Access Control (MAC and routing protocols. We also present some potential paradigm-shifting applications as well as complementary technologies of wireless inter-chip communications.

  8. FY1995 optoelectronic devices and circuits for terabit class network; 1995 nendo terabit kyu network yo hikari denshi device kairo

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The necessary technology realizing Terabit class optical network is the signal multiplexing both in temporal and spectral domains. Controllability of ultrafast optoelectronic systems is therefore the priority issue. Specifically we chose semiconductor lasers as the key devices. The methodology for performance improvement and the creation of novel functionality are investigated. Firstly compression of semiconductor laser pulse reached the world record of 65 femto second. Secondly a proposal was made to control mode locked semiconductor lasers via subharmonic synchronization and a substantial phase noise reduction was demonstrated. Thirdly a new technology was developed to realize broadband anti-reflection coating on semiconductor laser amplifier facet, bringing about significant performance improvement. To compensate the dispersion induced signal distortion a broadband semiconductor laser amplifier four wave mixing was analyzed and also demonstrated experimentally. (NEDO)

  9. The interconnected fashion industry - an integrated vision

    Science.gov (United States)

    Papahristou, E.; Kyratsis, P.; Priniotakis, G.; Bilalis, N.

    2017-10-01

    The internet of things (IoT) is transforming everyday physical objects that surround us into an ecosystem of information that is rapidly changing the way we live our lives. Any physical product can be more intelligent, more interactive, more trackable and more valuable by being connected via IoT. All industries, including Fashion, are expecting that the IoT will make real quantifiable impact that can be quickly translated into positive ROI for the business, and equally a positive return for consumers. In our research on the integration of 3D virtual prototype in the Textile and Clothing sector, IoT was of particular interest. The research was contacted using a combination of primary and secondary sources. First hand interviews to explore the impact of recent technology applications in the design and production of fashion products and the areas which are going to benefit most. The research has included several questions to interviewees who are executives in fashion companies or industry entrepreneurs with the aim to investigate what IoT represents and attempts to understand how IoT can support Fashion Design, Development and procurement as well as manufacturing.

  10. Progress in the optoelectronic analog signal transfer for high energy particle detectors

    International Nuclear Information System (INIS)

    Tsang, T.; Radeka, V.

    1992-05-01

    We report the progress in the development of a radiation hard Optoelectronic analog system to transfer particle detector signals with high accuracy. We will present the motivation of this study, the operating principle of the optoelectronic system, the system noise study, the recent R ampersand D efforts on radiation effect, temperature stability, and the realization of an integrated l x l6 optical modulator. The issue of photon source for driving such a large-scale optoelectronic modulators is a major concern. We will address this problem by examining different possible photon sources and comment on other possible alternative for signal transfer

  11. Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates

    International Nuclear Information System (INIS)

    Byun, Kwangsub; Cho, Kyoungah; Kim, Sangsig

    2010-01-01

    The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.

  12. Encoded low swing for ultra low power interconnect

    NARCIS (Netherlands)

    Krishnan, R.; Pineda de Gyvez, J.

    2003-01-01

    We present a novel encoded-low swing technique for ultra low power interconnect. Using this technique and an efficient circuit implementation, we achieve an average of 45.7% improvement in the power-delay product over the schemes utilizing low swing techniques alone, for random bit streams. Also, we

  13. Distributed Robustness Analysis of Interconnected Uncertain Systems Using Chordal Decomposition

    DEFF Research Database (Denmark)

    Pakazad, Sina Khoshfetrat; Hansson, Anders; Andersen, Martin Skovgaard

    2014-01-01

    Large-scale interconnected uncertain systems commonly have large state and uncertainty dimensions. Aside from the heavy computational cost of performing robust stability analysis in a centralized manner, privacy requirements in the network can also introduce further issues. In this paper, we util...

  14. Interconnecting Microgrids via the Energy Router with Smart Energy Management

    Directory of Open Access Journals (Sweden)

    Yingshu Liu

    2017-08-01

    Full Text Available A novel and flexible interconnecting framework for microgrids and corresponding energy management strategies are presented, in response to the situation of increasing renewable-energy penetration and the need to alleviate dependency on energy storage equipment. The key idea is to establish complementary energy exchange between adjacent microgrids through a multiport electrical energy router, according to the consideration that adjacent microgrids may differ substantially in terms of their patterns of energy production and consumption, which can be utilized to compensate for each other’s instant energy deficit. Based on multiport bidirectional voltage source converters (VSCs and a shared direct current (DC power line, the energy router serves as an energy hub, and enables flexible energy flow among the adjacent microgrids and the main grid. The analytical model is established for the whole system, including the energy router, the interconnected microgrids and the main grid. Various operational modes of the interconnected microgrids, facilitated by the energy router, are analyzed, and the corresponding control strategies are developed. Simulations are carried out on the Matlab/Simulink platform, and the results have demonstrated the validity and reliability of the idea for microgrid interconnection as well as the corresponding control strategies for flexible energy flow.

  15. The myth of interconnected plastids and related phenomena.

    Science.gov (United States)

    Schattat, Martin H; Barton, Kiah A; Mathur, Jaideep

    2015-01-01

    Studies spread over nearly two and a half centuries have identified the primary plastid in autotrophic algae and plants as a pleomorphic, multifunctional organelle comprising of a double-membrane envelope enclosing an organization of internal membranes submerged in a watery stroma. All plastid units have been observed extending and retracting thin stroma-filled tubules named stromules sporadically. Observations on living plant cells often convey the impression that stromules connect two or more independent plastids with each other. When photo-bleaching techniques were used to suggest that macromolecules such as the green fluorescent protein could flow between already interconnected plastids, for many people this impression changed to conviction. However, it was noticed only recently that the concept of protein flow between plastids rests solely on the words "interconnected plastids" for which details have never been provided. We have critically reviewed botanical literature dating back to the 1880s for understanding this term and the phenomena that have become associated with it. We find that while meticulously detailed ontogenic studies spanning nearly 150 years have established the plastid as a singular unit organelle, there is no experimental support for the idea that interconnected plastids exist under normal conditions of growth and development. In this review, while we consider several possibilities that might allow a single elongated plastid to be misinterpreted as two or more interconnected plastids, our final conclusion is that the concept of direct protein flow between plastids is based on an unfounded assumption.

  16. Load frequency control of three area interconnected hydro-thermal ...

    African Journals Online (AJOL)

    This paper present analysis on dynamic performance of Load Frequency Control (LFC) of three area interconnected hydrothermal reheat power system by the use of Artificial Intelligent and PI Controller. In the proposed scheme, control methodology developed using conventional PI controller, Artificial Neural Network ...

  17. Optimal interconnect ATPG under a ground-bounce constraint

    NARCIS (Netherlands)

    Hollmann, H.D.L.; Marinissen, E.J.; Vermeulen, B.

    In order to prevent ground bounce, Automatic Test Pattern Generation (ATPG) algorithms for wire interconnects have recently been extended with the capability to restrict the maximal Hamming distance between any two consecutive test patterns to a user-defined integer, referred to as the

  18. Area analysis of interconnection networks implemented on the honeycomb architecture

    Energy Technology Data Exchange (ETDEWEB)

    Milutinovic, D

    1996-12-31

    The are utilization of interconnection networks for parallel processing on one form of uniform parallel architecture of cellular type is analyzed. Formulae for the number of cells necessity to realize a networks and the efficiency factor of the system are derived. 15 refs.

  19. 14 CFR 25.957 - Flow between interconnected tanks.

    Science.gov (United States)

    2010-01-01

    ... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY AIRPLANES Powerplant Fuel System § 25.957 Flow between interconnected tanks. If fuel can be pumped from one tank to another in flight, the fuel tank vents and the fuel transfer system must be designed so that no structural damage to the tanks can occur because of overfilling. ...

  20. Ultra-stretchable Interconnects for high-density stretchable electronics

    NARCIS (Netherlands)

    Shafqat, S.; Hoefnagels, J.P.M.; Savov, A.; Joshi, S.; Dekker, R.; Geers, M.G.D.

    2017-01-01

    The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for