WorldWideScience

Sample records for optoelectronic interconnect technology

  1. Integrated optoelectronic materials and circuits for optical interconnects

    International Nuclear Information System (INIS)

    Hutcheson, L.D.

    1988-01-01

    Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected

  2. Optoelectronic interconnects for 3D wafer stacks

    Science.gov (United States)

    Ludwig, David; Carson, John C.; Lome, Louis S.

    1996-01-01

    Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

  3. Demonstration of an optoelectronic interconnect architecture for a parallel modified signed-digit adder and subtracter

    Science.gov (United States)

    Sun, Degui; Wang, Na-Xin; He, Li-Ming; Weng, Zhao-Heng; Wang, Daheng; Chen, Ray T.

    1996-06-01

    A space-position-logic-encoding scheme is proposed and demonstrated. This encoding scheme not only makes the best use of the convenience of binary logic operation, but is also suitable for the trinary property of modified signed- digit (MSD) numbers. Based on the space-position-logic-encoding scheme, a fully parallel modified signed-digit adder and subtractor is built using optoelectronic switch technologies in conjunction with fiber-multistage 3D optoelectronic interconnects. Thus an effective combination of a parallel algorithm and a parallel architecture is implemented. In addition, the performance of the optoelectronic switches used in this system is experimentally studied and verified. Both the 3-bit experimental model and the experimental results of a parallel addition and a parallel subtraction are provided and discussed. Finally, the speed ratio between the MSD adder and binary adders is discussed and the advantage of the MSD in operating speed is demonstrated.

  4. A full-duplex working integrated optoelectronic device for optical interconnect

    Science.gov (United States)

    Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

    2018-05-01

    In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

  5. Optoelectronic circuits in nanometer CMOS technology

    CERN Document Server

    Atef, Mohamed

    2016-01-01

    This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

  6. Operational parameters of an opto-electronic neural network employing fixed planar holographic interconnects

    Science.gov (United States)

    Keller, P. E.; Gmitro, A. F.

    1993-07-01

    A prototype neutral network system of multifaceted, planar interconnection holograms and opto-electronic neurons is analyzed. This analysis shows that a hologram fabricated with electron-beam lithography has the capacity to connect 6700 neuron outputs to 6700 neuron inputs, and that, the encoded synaptic weights have a precision of approximately 5 bits. Higher interconnection densities can be achieved by accepting a lower synaptic weight accuracy. For systems employing laser diodes at the outputs of the neurons, processing rates in the range of 45 to 720 trillion connections per second can potentially be achieved.

  7. Two-dimensional optoelectronic interconnect-processor and its operational bit error rate

    Science.gov (United States)

    Liu, J. Jiang; Gollsneider, Brian; Chang, Wayne H.; Carhart, Gary W.; Vorontsov, Mikhail A.; Simonis, George J.; Shoop, Barry L.

    2004-10-01

    Two-dimensional (2-D) multi-channel 8x8 optical interconnect and processor system were designed and developed using complementary metal-oxide-semiconductor (CMOS) driven 850-nm vertical-cavity surface-emitting laser (VCSEL) arrays and the photodetector (PD) arrays with corresponding wavelengths. We performed operation and bit-error-rate (BER) analysis on this free-space integrated 8x8 VCSEL optical interconnects driven by silicon-on-sapphire (SOS) circuits. Pseudo-random bit stream (PRBS) data sequence was used in operation of the interconnects. Eye diagrams were measured from individual channels and analyzed using a digital oscilloscope at data rates from 155 Mb/s to 1.5 Gb/s. Using a statistical model of Gaussian distribution for the random noise in the transmission, we developed a method to compute the BER instantaneously with the digital eye-diagrams. Direct measurements on this interconnects were also taken on a standard BER tester for verification. We found that the results of two methods were in the same order and within 50% accuracy. The integrated interconnects were investigated in an optoelectronic processing architecture of digital halftoning image processor. Error diffusion networks implemented by the inherently parallel nature of photonics promise to provide high quality digital halftoned images.

  8. Opto-Electronic and Interconnects Hierarchical Design Automation System (OE-IDEAS)

    National Research Council Canada - National Science Library

    Turowski, M

    2004-01-01

    As microelectronics technology continues to advance, the associated electrical interconnection technology is not likely to keep pace, due to many parasitic effects appearing in metallic interconnections...

  9. Optoelectronics technologies for Virtual Reality systems

    Science.gov (United States)

    Piszczek, Marek; Maciejewski, Marcin; Pomianek, Mateusz; Szustakowski, Mieczysław

    2017-08-01

    Solutions in the field of virtual reality are very strongly associated with optoelectronic technologies. This applies to both process design and operation of VR applications. Technologies such as 360 cameras and 3D scanners significantly improve the design work. What is more, HMD displays with high field of view or optoelectronic Motion Capture systems and 3D cameras guarantee an extraordinary experience in immersive VR applications. This article reviews selected technologies from the perspective of their use in a broadly defined process of creating and implementing solutions for virtual reality. There is also the ability to create, modify and adapt new approaches that show team own work (SteamVR tracker). Most of the introduced examples are effectively used by authors to create different VR applications. The use of optoelectronic technology in virtual reality is presented in terms of design and operation of the system as well as referring to specific applications. Designers and users of VR systems should take a close look on new optoelectronics solutions, as they can significantly contribute to increased work efficiency and offer completely new opportunities for virtual world reception.

  10. Universal Interconnection Technology Workshop Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Sheaffer, P.; Lemar, P.; Honton, E. J.; Kime, E.; Friedman, N. R.; Kroposki, B.; Galdo, J.

    2002-10-01

    The Universal Interconnection Technology (UIT) Workshop - sponsored by the U.S. Department of Energy, Distributed Energy and Electric Reliability (DEER) Program, and Distribution and Interconnection R&D - was held July 25-26, 2002, in Chicago, Ill., to: (1) Examine the need for a modular universal interconnection technology; (2) Identify UIT functional and technical requirements; (3) Assess the feasibility of and potential roadblocks to UIT; (4) Create an action plan for UIT development. These proceedings begin with an overview of the workshop. The body of the proceedings provides a series of industry representative-prepared papers on UIT functions and features, present interconnection technology, approaches to modularization and expandability, and technical issues in UIT development as well as detailed summaries of group discussions. Presentations, a list of participants, a copy of the agenda, and contact information are provided in the appendices of this document.

  11. Self-Rerouting and Curative Interconnect Technology (SERCUIT)

    Science.gov (United States)

    2017-12-01

    SPECIAL REPORT RDMR-CS-17-01 SELF-REROUTING AND CURATIVE INTERCONNECT TECHNOLOGY (SERCUIT) Shiv Joshi Concepts to Systems, Inc...Final 4. TITLE AND SUBTITLE Self-Rerouting and Curative Interconnect Technology (SERCUIT) 5. FUNDING NUMBERS 6. AUTHOR(S) Shiv Joshi...concepts2systems.com (p) 434-207-5189 x (f) Click to view full size Title Contract Number SELF-REROUTING AND CURATIVE INTERCONNECT TECHNOLOGY (SERCUIT) W911W6-17-C-0029

  12. Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

    International Nuclear Information System (INIS)

    Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

    2015-01-01

    Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

  13. High-performance parallel processors based on star-coupled wavelength division multiplexing optical interconnects

    Science.gov (United States)

    Deri, Robert J.; DeGroot, Anthony J.; Haigh, Ronald E.

    2002-01-01

    As the performance of individual elements within parallel processing systems increases, increased communication capability between distributed processor and memory elements is required. There is great interest in using fiber optics to improve interconnect communication beyond that attainable using electronic technology. Several groups have considered WDM, star-coupled optical interconnects. The invention uses a fiber optic transceiver to provide low latency, high bandwidth channels for such interconnects using a robust multimode fiber technology. Instruction-level simulation is used to quantify the bandwidth, latency, and concurrency required for such interconnects to scale to 256 nodes, each operating at 1 GFLOPS performance. Performance scales have been shown to .apprxeq.100 GFLOPS for scientific application kernels using a small number of wavelengths (8 to 32), only one wavelength received per node, and achievable optoelectronic bandwidth and latency.

  14. Stereoscopic construction and practice of optoelectronic technology textbook

    Science.gov (United States)

    Zhou, Zigang; Zhang, Jinlong; Wang, Huili; Yang, Yongjia; Han, Yanling

    2017-08-01

    It is a professional degree course textbook for the Nation-class Specialty—Optoelectronic Information Science and Engineering, and it is also an engineering practice textbook for the cultivation of photoelectric excellent engineers. The book seeks to comprehensively introduce the theoretical and applied basis of optoelectronic technology, and it's closely linked to the current development of optoelectronic industry frontier and made up of following core contents, including the laser source, the light's transmission, modulation, detection, imaging and display. At the same time, it also embodies the features of the source of laser, the transmission of the waveguide, the electronic means and the optical processing methods.

  15. Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

    Directory of Open Access Journals (Sweden)

    Cheng Chuantong

    2017-07-01

    Full Text Available Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

  16. Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

    Science.gov (United States)

    Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

    2017-07-01

    Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

  17. Optics vs copper: from the perspective of "Thunderbolt" interconnect technology

    Science.gov (United States)

    Cheng, Hengju; Krause, Christine; Ko, Jamyuen; Gao, Miaobin; Liu, Guobin; Wu, Huichin; Qi, Mike; Lam, Chun-Chit

    2013-02-01

    Interconnect technology has been progressed at a very fast pace for the past decade. The signaling rates have steadily increased from 100:Mb/s to 25Gb/s. In every generation of interconnect technology evolution, optics always seems to take over at first, however, at the end, the cost advantage of copper wins over. Because of this, optical interconnects are limited to longer distance links where the attenuation in copper cable is too large for the integrated circuits to compensate. Optical interconnect has long been viewed as the premier solution in compared with copper interconnect. With the release of Thunderbolt technology, we are entering a new era in consumer electronics that runs at 10Gb/s line rate (20Gb/s throughput per connector interface). Thunderbolt interconnect technology includes both active copper cables and active optical cables as the transmission media which have very different physical characteristics. In order for optics to succeed in consumer electronics, several technology hurdles need to be cleared. For example, the optical cable needs to handle the consumer abuses such as pinch and bend. Also, the optical engine used in the active optical cable needs to be physically very small so that we don't change the looks and feels of the cable/connector. Most importantly, the cost of optics needs to come down significantly to effectively compete with the copper solution. Two interconnect technologies are compared and discussed on the relative cost, power consumption, form factor, density, and future scalability.

  18. The construction of bilingual teaching of optoelectronic technology

    Science.gov (United States)

    Zhang, Yang; Zhao, Enming; Yang, Fan; Li, Qingbo; Zhu, Zheng; Li, Cheng; Sun, Peng

    2017-08-01

    This paper combines the characteristics of optoelectronic technology with that of bilingual teaching. The course pays attention to integrating theory with practice, and cultivating learners' ability. Reform and exploration have been done in the fields of teaching materials, teaching content, teaching methods, etc. The concrete content mainly includes five parts: selecting teaching materials, establishing teaching syllabus, choosing suitable teaching method, making multimedia courseware and improving the test system, which can arouse students' interest in their study and their autonomous learning ability to provide beneficial references for improving the quality of talents of optoelectronic bilingual courses.

  19. Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

    1999-01-01

    Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

  20. Dual-scale topology optoelectronic processor.

    Science.gov (United States)

    Marsden, G C; Krishnamoorthy, A V; Esener, S C; Lee, S H

    1991-12-15

    The dual-scale topology optoelectronic processor (D-STOP) is a parallel optoelectronic architecture for matrix algebraic processing. The architecture can be used for matrix-vector multiplication and two types of vector outer product. The computations are performed electronically, which allows multiplication and summation concepts in linear algebra to be generalized to various nonlinear or symbolic operations. This generalization permits the application of D-STOP to many computational problems. The architecture uses a minimum number of optical transmitters, which thereby reduces fabrication requirements while maintaining area-efficient electronics. The necessary optical interconnections are space invariant, minimizing space-bandwidth requirements.

  1. An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

    Science.gov (United States)

    Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

    2012-12-17

    An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

  2. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  3. Distributed Energy Resources Interconnection Systems: Technology Review and Research Needs

    Energy Technology Data Exchange (ETDEWEB)

    Friedman, N. R.

    2002-09-01

    Interconnecting distributed energy resources (DER) to the electric utility grid (or Area Electric Power System, Area EPS) involves system engineering, safety, and reliability considerations. This report documents US DOE Distribution and Interconnection R&D (formerly Distributed Power Program) activities, furthering the development and safe and reliable integration of DER interconnected with our nation's electric power systems. The key to that is system integration and technology development of the interconnection devices that perform the functions necessary to maintain the safety, power quality, and reliability of the EPS when DER are connected to it.

  4. Patterned electrodeposition of interconnects using microcontact printing

    NARCIS (Netherlands)

    Hovestad, A.; Rendering, H.; Maijenburg, A.W.

    2012-01-01

    Microcontact printing combined with electroless deposition is a potential low cost technique to make electrical interconnects for opto-electronic devices. Microcontact printed inhibitors locally prevent electroless deposition resulting in a pre-defined pattern of metal tracks. The inhibition of

  5. Development of Interconnect Technologies for Particle Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, Mani [Univ. of California, Davis, CA (United States)

    2015-01-29

    This final report covers the three years of this grant, for the funding period 9/1/2010 - 8/31/2013. The project consisted of generic detector R&D work at UC Davis, with an emphasis on developing interconnect technologies for applications in HEP. Much of the work is done at our Facility for Interconnect Technologies (FIT) at UC Davis. FIT was established using ARRA funds, with further studies supported by this grant. Besides generic R&D work at UC Davis, FIT is engaged in providing bump bonding help to several DOE supported detector R&D efforts. Some of the developmental work was also supported by funding from other sources: continuing CMS project funds and the Linear Collider R&D funds. The latter program is now terminated. The three year program saw a good deal of progress on several fronts, which are reported here.

  6. Optical backplane interconnect switch for data processors and computers

    Science.gov (United States)

    Hendricks, Herbert D.; Benz, Harry F.; Hammer, Jacob M.

    1989-01-01

    An optoelectronic integrated device design is reported which can be used to implement an all-optical backplane interconnect switch. The switch is sized to accommodate an array of processors and memories suitable for direct replacement into the basic avionic multiprocessor backplane. The optical backplane interconnect switch is also suitable for direct replacement of the PI bus traffic switch and at the same time, suitable for supporting pipelining of the processor and memory. The 32 bidirectional switchable interconnects are configured with broadcast capability for controls, reconfiguration, and messages. The approach described here can handle a serial interconnection of data processors or a line-to-link interconnection of data processors. An optical fiber demonstration of this approach is presented.

  7. Free-Space Optical Interconnect Employing VCSEL Diodes

    Science.gov (United States)

    Simons, Rainee N.; Savich, Gregory R.; Torres, Heidi

    2009-01-01

    Sensor signal processing is widely used on aircraft and spacecraft. The scheme employs multiple input/output nodes for data acquisition and CPU (central processing unit) nodes for data processing. To connect 110 nodes and CPU nodes, scalable interconnections such as backplanes are desired because the number of nodes depends on requirements of each mission. An optical backplane consisting of vertical-cavity surface-emitting lasers (VCSELs), VCSEL drivers, photodetectors, and transimpedance amplifiers is the preferred approach since it can handle several hundred megabits per second data throughput.The next generation of satellite-borne systems will require transceivers and processors that can handle several Gb/s of data. Optical interconnects have been praised for both their speed and functionality with hopes that light can relieve the electrical bottleneck predicted for the near future. Optoelectronic interconnects provide a factor of ten improvement over electrical interconnects.

  8. Study and practice of flipped classroom in optoelectronic technology curriculum

    Science.gov (United States)

    Shi, Jianhua; Lei, Bing; Liu, Wei; Yao, Tianfu; Jiang, Wenjie

    2017-08-01

    "Flipped Classroom" is one of the most popular teaching models, and has been applied in more and more curriculums. It is totally different from the traditional teaching model. In the "Flipped Classroom" model, the students should watch the teaching video afterschool, and in the classroom only the discussion is proceeded to improve the students' comprehension. In this presentation, "Flipped Classroom" was studied and practiced in opto-electronic technology curriculum; its effect was analyzed by comparing it with the traditional teaching model. Based on extensive and deep investigation, the phylogeny, the characters and the important processes of "Flipped Classroom" are studied. The differences between the "Flipped Classroom" and the traditional teaching model are demonstrated. Then "Flipped Classroom" was practiced in opto-electronic technology curriculum. In order to obtain high effectiveness, a lot of teaching resources were prepared, such as the high-quality teaching video, the animations and the virtual experiments, the questions that the students should finish before and discussed in the class, etc. At last, the teaching effect was evaluated through analyzing the result of the examination and the students' surveys.

  9. 32 x 16 CMOS smart pixel array for optical interconnects

    Science.gov (United States)

    Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

    2000-05-01

    Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

  10. Design of a highly parallel board-level-interconnection with 320 Gbps capacity

    Science.gov (United States)

    Lohmann, U.; Jahns, J.; Limmer, S.; Fey, D.; Bauer, H.

    2012-01-01

    A parallel board-level interconnection design is presented consisting of 32 channels, each operating at 10 Gbps. The hardware uses available optoelectronic components (VCSEL, TIA, pin-diodes) and a combination of planarintegrated free-space optics, fiber-bundles and available MEMS-components, like the DMD™ from Texas Instruments. As a specific feature, we present a new modular inter-board interconnect, realized by 3D fiber-matrix connectors. The performance of the interconnect is evaluated with regard to optical properties and power consumption. Finally, we discuss the application of the interconnect for strongly distributed system architectures, as, for example, in high performance embedded computing systems and data centers.

  11. Commercialization issues and funding opportunities for high-performance optoelectronic computing modules

    Science.gov (United States)

    Hessenbruch, John M.; Guilfoyle, Peter S.

    1997-01-01

    Low power, optoelectronic integrated circuits are being developed for high speed switching and data processing applications. These high performance optoelectronic computing modules consist of three primary components: vertical cavity surface emitting lasers, diffractive optical interconnect elements, and detector/amplifier/laser driver arrays. Following the design and fabrication of an HPOC module prototype, selected commercial funding sources will be evaluated to support a product development stage. These include the formation of a strategic alliance with one or more microprocessor or telecommunications vendors, and/or equity investment from one or more venture capital firms.

  12. Investigation, study and practice of optoelectronic MOOCs

    Science.gov (United States)

    Shi, Jianhua; Liu, Wei; Lei, Bing; Yao, Tianfu; Fu, Sihua

    2017-08-01

    MOOC(Massive Open Online Course) is a new teaching model that has been springing up since 2012. The typical characters are short teaching video, massive learners, flexible place and time to study, etc. Although MOOC is very popular now, opto-electronic MOOCs are not much enough to meet the need of online learners. In this paper, the phylogeny, the current situation and the characters of MOOC were described, the most famous MOOCs' websites, such as Udacity, Coursera, edX, Chinese College MOOC, xuetangx, were introduced, the opto-electronic MOOCs come from these famous MOOCs' website were investigated extensively and studied deeply, the "Application of Opto-electronic Technology MOOC" which was established by our group is introduced, and some conclusions are obtained. These conclusions can give some suggestions to the online learners who are interested in opto-electronic and the teachers who are teaching the opto-electronic curriculums. The preparation of "Opto-electronic Technology MOOC" is described in short.

  13. Standard cell-based implementation of a digital optoelectronic neural-network hardware.

    Science.gov (United States)

    Maier, K D; Beckstein, C; Blickhan, R; Erhard, W

    2001-03-10

    A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

  14. Integrated optics and optoelectronics II; Proceedings of the Meeting, San Jose, CA, Sept. 17-19, 1990

    International Nuclear Information System (INIS)

    Wong, Ka-Kha

    1991-01-01

    The present volume on integrated optics and optoelectronics discusses proton- and ion-exchange technologies, radiation effects on GaAs optical system FET devices and on the dynamical behavior of LiNbO3 switching devices, advanced lightwave components and concepts, advanced optical interconnects concepts, advanced aircraft and engine control, IOCs for fiber-optic gyroscopes, and commercial integrated optical devices. Attention is given to integrated optical devices for high-data-rate serial-to-parallel conversion, the design of novel integrated optic devices using depressed index waveguides, and a low-loss L-band microwave fiber-optic link for control of a T/R module. Topics addressed include the temperature and modulation dependence of spectral linewidth in distributed Bragg reflector laser diodes, length-minimization design considerations in photonic integrated circuits incorporating directional couplers, and the photochemical formation of polymeric optical waveguides and devices for optical interconnection applications

  15. Optical interconnect technologies for high-bandwidth ICT systems

    Science.gov (United States)

    Chujo, Norio; Takai, Toshiaki; Mizushima, Akiko; Arimoto, Hideo; Matsuoka, Yasunobu; Yamashita, Hiroki; Matsushima, Naoki

    2016-03-01

    The bandwidth of information and communication technology (ICT) systems is increasing and is predicted to reach more than 10 Tb/s. However, an electrical interconnect cannot achieve such bandwidth because of its density limits. To solve this problem, we propose two types of high-density optical fiber wiring for backplanes and circuit boards such as interface boards and switch boards. One type uses routed ribbon fiber in a circuit board because it has the ability to be formed into complex shapes to avoid interfering with the LSI and electrical components on the board. The backplane is required to exhibit high density and flexibility, so the second type uses loose fiber. We developed a 9.6-Tb/s optical interconnect demonstration system using embedded optical modules, optical backplane, and optical connector in a network apparatus chassis. We achieved 25-Gb/s transmission between FPGAs via the optical backplane.

  16. Optoelectronic lessons as an interdisciplinary lecture

    Science.gov (United States)

    Wu, Dan; Wu, Maocheng; Gu, Jihua

    2017-08-01

    It is noticed that more and more students in college are passionately curious about the optoelectronic technology, since optoelectronic technology has advanced extremely quickly during the last five years and its applications could be found in a lot of domains. The students who are interested in this area may have different educational backgrounds and their majors cover science, engineering, literature and social science, etc. Our course "History of the Optoelectronic Technology" is set up as an interdisciplinary lecture of the "liberal education" at our university, and is available for all students with different academic backgrounds from any departments of our university. The main purpose of the course is to show the interesting and colorful historical aspects of the development of this technology, so that the students from different departments could absorb the academic nourishment they wanted. There are little complex derivations of physical formulas through the whole lecture, but there are still some difficulties about the lecture which is discussed in this paper.

  17. Organic optoelectronics:materials,devices and applications

    Institute of Scientific and Technical Information of China (English)

    LIU Yi; CUI Tian-hong

    2005-01-01

    The interest in organic materials for optoelectronic devices has been growing rapidly in the last two decades. This growth has been propelled by the exciting advances in organic thin films for displays, low-cost electronic circuits, etc. An increasing number of products employing organic electronic devices have become commercialized, which has stimulated the age of organic optoelectronics. This paper reviews the recent progress in organic optoelectronic technology. First, organic light emitting electroluminescent materials are introduced. Next, the three kinds of most important organic optoelectronic devices are summarized, including light emitting diode, organic photovoltaic cell, and photodetectors. The various applications of these devices are also reviewed and discussed in detail. Finally, the market and future development of optoelectronic devices are also demonstrated.

  18. An introduction to optoelectronic sensors

    CERN Document Server

    Tajani, Antonella; Cutolo, Antonello

    2009-01-01

    This invaluable book offers a comprehensive overview of the technologies and applications of optoelectronic sensors. Based on the R&D experience of more than 70 engineers and scientists, highly representative of the Italian academic and industrial community in this area, this book provides a broad and accurate description of the state-of-the-art optoelectronic technologies for sensing. The most innovative approaches, such as the use of photonic crystals, squeezed states of light and microresonators for sensing, are considered. Application areas range from environment to medicine and healthcare

  19. OMNI: An optoelectronic multichannel network interface based on hybrid CMOS-SEED technology

    Science.gov (United States)

    Pinkston, Timothy M.

    1996-11-01

    This paper presents a hybrid CMOS-SEED multiprocessor network interface smart pixel design that implements a reservation-based channel control protocol for collisionless concurrent access to multiple optical interprocessor communication channels. An asynchronous optical token is used as the arbitration mechanism for reservation control instead of slotted access. This work demonstrates that complex network protocol functions can be implemented using optoelectronic smart pixel technology.

  20. Lasers and optoelectronics fundamentals, devices and applications

    CERN Document Server

    Maini, Anil K

    2013-01-01

    With emphasis on the physical and engineering principles, this book provides a comprehensive and highly accessible treatment of modern lasers and optoelectronics. Divided into four parts, it explains laser fundamentals, types of lasers, laser electronics & optoelectronics, and laser applications, covering each of the topics in their entirety, from basic fundamentals to advanced concepts. Key features include: exploration of technological and application-related aspects of lasers and optoelectronics, detailing both existing and emerging applications in industry, medical diag

  1. An interconnecting bus power optimization method combining interconnect wire spacing with wire ordering

    International Nuclear Information System (INIS)

    Zhu Zhang-Ming; Hao Bao-Tian; En Yun-Fei; Yang Yin-Tang; Li Yue-Jin

    2011-01-01

    On-chip interconnect buses consume tens of percents of dynamic power in a nanometer scale integrated circuit and they will consume more power with the rapid scaling down of technology size and continuously rising clock frequency, therefore it is meaningful to lower the interconnecting bus power in design. In this paper, a simple yet accurate interconnect parasitic capacitance model is presented first and then, based on this model, a novel interconnecting bus optimization method is proposed. Wire spacing is a process for spacing wires for minimum dynamic power, while wire ordering is a process that searches for wire orders that maximally enhance it. The method, i.e., combining wire spacing with wire ordering, focuses on bus dynamic power optimization with a consideration of bus performance requirements. The optimization method is verified based on various nanometer technology parameters, showing that with 50% slack of routing space, 25.71% and 32.65% of power can be saved on average by the proposed optimization method for a global bus and an intermediate bus, respectively, under a 65-nm technology node, compared with 21.78% and 27.68% of power saved on average by uniform spacing technology. The proposed method is especially suitable for computer-aided design of nanometer scale on-chip buses. (interdisciplinary physics and related areas of science and technology)

  2. A Vision of China-Arab Interconnection Transmission Network Planning with UHVDC Technology

    Science.gov (United States)

    Wu, Dan; Liu, Yujun; Yin, Hongyuan; Xu, Qingshan; Xu, Xiaohui; Ding, Maosheng

    2017-05-01

    Developments in ultra-high-voltage (UHV) power systems and clean energy technologies are paving the way towards unprecedented energy market globalization. In accordance with the international community’s enthusiasm for building up the Global Energy Internet, this paper focuses on the feasibility of transmitting large-size electricity from northwest China to Arab world through a long-distance transnational power interconnection. The complete investigations on the grids of both the sending-end and receiving-end is firstly presented. Then system configuration of the transmission scheme and corridor route planning is proposed with UHVDC technology. Based on transmission costs’ investigation about similar transmission projects worldwide, the costs of the proposed transmission scheme are estimated through adjustment factors which represent differences in latitude, topography and economy. The proposed China-Arab transmission line sheds light on the prospects of power cooperation and resource sharing between China and Arab states, and appeals for more emphasis on green energy concentrated power interconnections from a global perspective.

  3. Perspectives in optoelectronics

    National Research Council Canada - National Science Library

    Jha, Sudhanshu S

    1995-01-01

    ..., optoelectronics is playing a major role in both applied as well as basic sciences. In years to come, i t is destined to change the face of information technology and robotics, involving optical sensing and control, information storage, signal and image processing, communications, and computing. Because of the possibility of using large bandwidths availa...

  4. High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Xianshu eLuo

    2015-04-01

    Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

  5. Fast modified signal-digit (MSD) multiplication technology and system

    Science.gov (United States)

    Sun, DeGui; He, Li-Ming; Wang, Na-Xin; Weng, Zhao-Heng

    1994-06-01

    In this paper, the carry-free property of modified-signed-digit (MSD) addition is analyzed with a space position logic encoding scheme. On this basis, MSD multiplication is discussed and a fast MSD multiplication system composed of optoelectronic logic technology and a multilayer optical interconnection architecture is propsed and studied. Finally, the effectivity of the fast MSD multiplication system is demostrated by using a 2X2 bit multiplication example and experimental results are given.

  6. Policy issues in interconnecting networks

    Science.gov (United States)

    Leiner, Barry M.

    1989-01-01

    To support the activities of the Federal Research Coordinating Committee (FRICC) in creating an interconnected set of networks to serve the research community, two workshops were held to address the technical support of policy issues that arise when interconnecting such networks. The workshops addressed the required and feasible technologies and architectures that could be used to satisfy the desired policies for interconnection. The results of the workshop are documented.

  7. Research on the application of optoelectronics to nuclear power plants

    International Nuclear Information System (INIS)

    Shirosaki, Hidekazu; Mitsuda, Hiromichi; Kurata, Toshikazu; Soramoto, Seiki; Maekawa, Tatsuyuki.

    1995-01-01

    Optoelectronics, which is based on technologies such as laser diodes and optical fibers, is approaching the realm of practical application in the fields of optical fiber communications and compact disks etc,. In addition, laser enrichment, a type of uranium enrichment technique used in the nuclear field, can also be regarded as a product of optoelectronics. Application of optoelectronics in a wide range of fields is likely to continue in the future, and research is being conducted on coherent optical communication, optical integrated circuits, optical computers and other subjects in hopes of attaining practical application of these technologies in the future. On the other hand, digital control equipment and other related devices have been installed and data transfer using optical fibers has been implemented on a partial basis at nuclear power plants, and optoelectronics is anticipated to be applied on an even broader scale in the future, thereby creating the potential for improving plant reliability. In this research, we conducted an investigative study of technologies relating to optoelectronics, and proposed a remote monitoring system for manually operated valves that employs optical switches. Moreover, we conducted theoretical verification tests on the proposed system and carried out a feasibility study relating to application to nuclear power plants. As a result, the proposed system was found to be effective, and confirmed to have the potential of realization as a valve switching monitoring system. (author)

  8. Fundamentals of lead-free solder interconnect technology from microstructures to reliability

    CERN Document Server

    Lee, Tae-Kyu; Kim, Choong-Un; Ma, Hongtao

    2015-01-01

    This unique book provides an up-to-date overview of the fundamental concepts behind lead-free solder and interconnection technology. Readers will find a description of the rapidly increasing presence of electronic systems in all aspects of modern life as well as the increasing need for predictable reliability in electronic systems. The physical and mechanical properties of lead-free solders are examined in detail, and building on fundamental science, the mechanisms responsible for damage and failure evolution, which affect reliability of lead-free solder joints are identified based on microstructure evolution.  The continuing miniaturization of electronic systems will increase the demand on the performance of solder joints, which will require new alloy and processing strategies as well as interconnection design strategies. This book provides a foundation on which improved performance and new design approaches can be based.  In summary, this book:  Provides an up-to-date overview on lead-free soldering tech...

  9. Perovskite Materials: Solar Cell and Optoelectronic Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Bin [ORNL; Geohegan, David B [ORNL; Xiao, Kai [ORNL

    2017-01-01

    Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure, and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.

  10. Advanced Optoelectronic Components for All-Optical Networks

    National Research Council Canada - National Science Library

    Shapiro, Jeffrey H

    2002-01-01

    Under APOSR Grant F49620-96-1-0126, 'Advanced Optoelectronic Components for All-Optical Networks', we have worked to develop key technologies and components to substantially improve the performance...

  11. Analysis of optoelectronic strategic planning in Taiwan by artificial intelligence portfolio tool

    Science.gov (United States)

    Chang, Rang-Seng

    1992-05-01

    Taiwan ROC has achieved significant advances in the optoelectronic industry with some Taiwan products ranked high in the world market and technology. Six segmentations of optoelectronic were planned. Each one was divided into several strategic items, design artificial intelligent portfolio tool (AIPT) to analyze the optoelectronic strategic planning in Taiwan. The portfolio is designed to provoke strategic thinking intelligently. This computer- generated strategy should be selected and modified by the individual. Some strategies for the development of the Taiwan optoelectronic industry also are discussed in this paper.

  12. Advanced educational program in optoelectronics for undergraduates and graduates in electronics

    Science.gov (United States)

    Vladescu, Marian; Schiopu, Paul

    2015-02-01

    The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.

  13. Network interconnections: an architectural reference model

    NARCIS (Netherlands)

    Butscher, B.; Lenzini, L.; Morling, R.; Vissers, C.A.; Popescu-Zeletin, R.; van Sinderen, Marten J.; Heger, D.; Krueger, G.; Spaniol, O.; Zorn, W.

    1985-01-01

    One of the major problems in understanding the different approaches in interconnecting networks of different technologies is the lack of reference to a general model. The paper develops the rationales for a reference model of network interconnection and focuses on the architectural implications for

  14. Organic optoelectronic materials

    CERN Document Server

    Li, Yongfang

    2015-01-01

    This volume reviews the latest trends in organic optoelectronic materials. Each comprehensive chapter allows graduate students and newcomers to the field to grasp the basics, whilst also ensuring that they have the most up-to-date overview of the latest research. Topics include: organic conductors and semiconductors; conducting polymers and conjugated polymer semiconductors, as well as their applications in organic field-effect-transistors; organic light-emitting diodes; and organic photovoltaics and transparent conducting electrodes. The molecular structures, synthesis methods, physicochemical and optoelectronic properties of the organic optoelectronic materials are also introduced and described in detail. The authors also elucidate the structures and working mechanisms of organic optoelectronic devices and outline fundamental scientific problems and future research directions. This volume is invaluable to all those interested in organic optoelectronic materials.

  15. Next generation space interconnect research and development in space communications

    Science.gov (United States)

    Collier, Charles Patrick

    2017-11-01

    Interconnect or "bus" is one of the critical technologies in design of spacecraft avionics systems that dictates its architecture and complexity. MIL-STD-1553B has long been used as the avionics backbone technology. As avionics systems become more and more capable and complex, however, limitations of MIL-STD-1553B such as insufficient 1 Mbps bandwidth and separability have forced current avionics architects and designers to use combination of different interconnect technologies in order to meet various requirements: CompactPCI is used for backplane interconnect; LVDS or RS422 is used for low and high-speed direct point-to-point interconnect; and some proprietary interconnect standards are designed for custom interfaces. This results in a very complicated system that consumes significant spacecraft mass and power and requires extensive resources in design, integration and testing of spacecraft systems.

  16. Optoelectronic and nonlinear optical processes in low dimensional ...

    Indian Academy of Sciences (India)

    Optoelectronic process; nonlinear optical process; semiconductor. Quest for ever faster and intelligent information processing technologies has sparked ..... Schematic energy level diagram for the proposed 4-level model. States other than the.

  17. Silicon opto-electronic wavelength tracker based on an asymmetric 2x3 Mach-Zehnder Interferometer

    OpenAIRE

    Doménech Gómez, José David; Sanchez Fandiño, Javier Antonio; Gargallo Jaquotot, Bernardo Andrés; Baños Lopez, Rocio; Muñoz Muñoz, Pascual

    2014-01-01

    In this paper we report on the experimental demonstration of a Silicon-on-Insulator opto-electronic wavelength tracker for the optical telecommunication C-band. The device consist of a 2x3 Mach-Zehnder Interferometer (MZI) with 10 pm resolution and photo-detectors integrated on the same chip. The MZI is built interconnecting two Multimode Interference (MMI) couplers with two waveguides whose length difference is 56 mm. The first MMI has a coupling ratio of 95:05 to com...

  18. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

    International Nuclear Information System (INIS)

    Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

    2015-01-01

    Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

  19. Development and operation of interconnections in a restructuring context

    International Nuclear Information System (INIS)

    2003-01-01

    In many countries the electrical network is not fully interconnected and the best technical solution to achieve interconnection has to be found. At the same time the electricity industry is being restructured and interconnecting independent energy markets presents technical challenges. It is therefore timely to consider interconnection development and operation options: examine the benefits of interconnecting electrical networks and the development strategies, review the interconnection design options and the technologies available, identify the operational issues, the security problems of large interconnected systems, the protection issues, consider the impact of the restructuring of the electrical supply industry, assess the political, environmental and social implications of interconnections. reorganized in slovenia from 5-7 april 2004. (author)

  20. Variation Tolerant On-Chip Interconnects

    CERN Document Server

    Nigussie, Ethiopia Enideg

    2012-01-01

    This book presents design techniques, analysis and implementation of high performance and power efficient, variation tolerant on-chip interconnects.  Given the design paradigm shift to multi-core, interconnect-centric designs and the increase in sources of variability and their impact in sub-100nm technologies, this book will be an invaluable reference for anyone concerned with the design of next generation, high-performance electronics systems. Provides comprehensive, circuit-level explanation of high-performance, energy-efficient, variation-tolerant on-chip interconnect; Describes design techniques to mitigate problems caused by variation; Includes techniques for design and implementation of self-timed on-chip interconnect, delay variation insensitive communication protocols, high speed signaling techniques and circuits, bit-width independent completion detection and process, voltage and temperature variation tolerance.                          

  1. Warpage Characteristics and Process Development of Through Silicon Via-Less Interconnection Technology.

    Science.gov (United States)

    Shen, Wen-Wei; Lin, Yu-Min; Wu, Sheng-Tsai; Lee, Chia-Hsin; Huang, Shin-Yi; Chang, Hsiang-Hung; Chang, Tao-Chih; Chen, Kuan-Neng

    2018-08-01

    In this study, through silicon via (TSV)-less interconnection using the fan-out wafer-level-packaging (FO-WLP) technology and a novel redistribution layer (RDL)-first wafer level packaging are investigated. Since warpage of molded wafer is a critical issue and needs to be optimized for process integration, the evaluation of the warpage issue on a 12-inch wafer using finite element analysis (FEA) at various parameters is presented. Related parameters include geometric dimension (such as chip size, chip number, chip thickness, and mold thickness), materials' selection and structure optimization. The effect of glass carriers with various coefficients of thermal expansion (CTE) is also discussed. Chips are bonded onto a 12-inch reconstituted wafer, which includes 2 RDL layers, 3 passivation layers, and micro bumps, followed by using epoxy molding compound process. Furthermore, an optical surface inspector is adopted to measure the surface profile and the results are compared with the results from simulation. In order to examine the quality of the TSV-less interconnection structure, electrical measurement is conducted and the respective results are presented.

  2. Optical technology for microwave applications VI and optoelectronic signal processing for phased-array antennas III; Proceedings of the Meeting, Orlando, FL, Apr. 20-23, 1992

    Science.gov (United States)

    Yao, Shi-Kay; Hendrickson, Brian M.

    The following topics related to optical technology for microwave applications are discussed: advanced acoustooptic devices, signal processing device technologies, optical signal processor technologies, microwave and optomicrowave devices, advanced lasers and sources, wideband electrooptic modulators, and wideband optical communications. The topics considered in the discussion of optoelectronic signal processing for phased-array antennas include devices, signal processing, and antenna systems.

  3. Integrated Optical Interconnect Architectures for Embedded Systems

    CERN Document Server

    Nicolescu, Gabriela

    2013-01-01

    This book provides a broad overview of current research in optical interconnect technologies and architectures. Introductory chapters on high-performance computing and the associated issues in conventional interconnect architectures, and on the fundamental building blocks for integrated optical interconnect, provide the foundations for the bulk of the book which brings together leading experts in the field of optical interconnect architectures for data communication. Particular emphasis is given to the ways in which the photonic components are assembled into architectures to address the needs of data-intensive on-chip communication, and to the performance evaluation of such architectures for specific applications.   Provides state-of-the-art research on the use of optical interconnects in Embedded Systems; Begins with coverage of the basics for high-performance computing and optical interconnect; Includes a variety of on-chip optical communication topologies; Features coverage of system integration and opti...

  4. Optoelectronics circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Optoelectronics Circuits Manual covers the basic principles and characteristics of the best known types of optoelectronic devices, as well as the practical applications of many of these optoelectronic devices. The book describes LED display circuits and LED dot- and bar-graph circuits and discusses the applications of seven-segment displays, light-sensitive devices, optocouplers, and a variety of brightness control techniques. The text also tackles infrared light-beam alarms and multichannel remote control systems. The book provides practical user information and circuitry and illustrations.

  5. Optoelectronics-related competence building in Japanese and Western firms

    Science.gov (United States)

    Miyazaki, Kumiko

    1992-05-01

    In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.

  6. The Special LHC Interconnections Technologies, Organization and Quality Control

    CERN Document Server

    Tock, J P; Bozzini, D; Cruikshank, P; Desebe, O; Felip, M; Garion, C; Hajduk, L; Jacquemod, A; Kos, N; Laurent, F; Poncet, A; Russenschuck, Stephan; Slits, I; Vaudaux, L; Williams, L

    2008-01-01

    In addition to the standard interconnections (IC) of the continuous cryostat of the Large Hadron Collider (LHC), there exists a variety of special ones related to specific components and assemblies, such as cryomagnets of the insertion regions, electrical feedboxes and superconducting links. Though they are less numerous, their specificities created many additional IC types, requiring a larger variety of assembly operations and quality control techniques, keeping very high standards of quality. Considerable flexibility and adaptability from all the teams involved (CERN staff, collaborating institutes, contractors) were the key points to ensure the success of this task. This paper first describes the special IC and presents the employed technologies which are generally adapted from the standard work. Then, the organization adopted for this non-repetitive work is described. Examples of non-conformities that were resolved are also discussed. Figures of merit in terms of quality and productivity are given and com...

  7. Nano crystals for Electronic and Optoelectronic Applications

    International Nuclear Information System (INIS)

    Zhu, T.; Cloutier, S.G.; Ivanov, I; Knappenberger Jr, K.L.; Robel, I.; Zhang, F

    2012-01-01

    Electronic and optoelectronic devices, from computers and smart cell phones to solar cells, have become a part of our life. Currently, devices with featured circuits of 45 nm in size can be fabricated for commercial use. However, further development based on traditional semiconductor is hindered by the increasing thermal issues and the manufacturing cost. During the last decade, nano crystals have been widely adopted in various electronic and optoelectronic applications. They provide alternative options in terms of ease of processing, low cost, better flexibility, and superior electronic/optoelectronic properties. By taking advantage of solution-processing, self-assembly, and surface engineering, nano crystals could serve as new building blocks for low-cost manufacturing of flexible and large area devices. Tunable electronic structures combined with small exciton binding energy, high luminescence efficiency, and low thermal conductivity make nano crystals extremely attractive for FET, memory device, solar cell, solid-state lighting/display, photodetector, and lasing applications. Efforts to harness the nano crystal quantum tunability have led to the successful demonstration of many prototype devices, raising the public awareness to the wide range of solutions that nano technology can provide for an efficient energy economy. This special issue aims to provide the readers with the latest achievements of nano crystals in electronic and optoelectronic applications, including the synthesis and engineering of nano crystals towards the applications and the corresponding device fabrication, characterization and computer modeling.

  8. Low power interconnect design

    CERN Document Server

    Saini, Sandeep

    2015-01-01

    This book provides practical solutions for delay and power reduction for on-chip interconnects and buses.  It provides an in depth description of the problem of signal delay and extra power consumption, possible solutions for delay and glitch removal, while considering the power reduction of the total system.  Coverage focuses on use of the Schmitt Trigger as an alternative approach to buffer insertion for delay and power reduction in VLSI interconnects. In the last section of the book, various bus coding techniques are discussed to minimize delay and power in address and data buses.   ·         Provides practical solutions for delay and power reduction for on-chip interconnects and buses; ·         Focuses on Deep Sub micron technology devices and interconnects; ·         Offers in depth analysis of delay, including details regarding crosstalk and parasitics;  ·         Describes use of the Schmitt Trigger as a versatile alternative approach to buffer insertion for del...

  9. High-density hybrid interconnect methodologies

    International Nuclear Information System (INIS)

    John, J.; Zimmermann, L.; Moor, P.De; Hoof, C.Van

    2003-01-01

    Full text: The presentation gives an overview of the state-of-the-art of hybrid integration and in particular the IMEC technological approaches that will be able to address future hybrid detector needs. The dense hybrid flip-chip integration of an array of detectors and its dedicated readout electronics can be achieved with a variety of solderbump techniques such as pure Indium or Indium alloys, Ph-In, Ni/PbSn, but also conducting polymers... Particularly for cooled applications or ultra-high density applications, Indium solderbump technology (electroplated or evaporated) is the method of choice. The state-of-the-art of solderbump technologies that are to a high degree independent of the underlying detector material will be presented and examples of interconnect densities between 5x1E4cm-2 and 1x1E6 cm-2 will be demonstrated. For several classes of detectors, flip-chip integration is not allowed since the detectors have to be illuminated from the top. This applies to image sensors for EUV applications such as GaN/AlGaN based detectors and to MEMS-based sensors. In such cases, the only viable interconnection method has to be through the (thinned) detector wafer followed by a solderbump-based integration. The approaches for dense and ultra-dense through-the-wafer interconnect 'vias' will be presented and wafer thinning approaches will be shown

  10. Materials for optoelectronic devices, OEICs and photonics

    International Nuclear Information System (INIS)

    Schloetterer, H.; Quillec, M.; Greene, P.D.; Bertolotti, M.

    1991-01-01

    The aim of the contributors in this volume is to give a current overview on the basic properties of nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques from growth (LPE to MOMBE) and for processing from surface passivation to ion beams. Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic materials development, as well as indicating the growth techniques that will be in use around the year 2000

  11. Optical Interconnects for Future Data Center Networks

    CERN Document Server

    Bergman, Keren; Tomkos, Ioannis

    2013-01-01

    Optical Interconnects for Future Data Center Networks covers optical networks and how they can provide high bandwidth, energy efficient interconnects with increased communication bandwidth. This volume, with contributions from leading researchers in the field, presents an integrated view of the expected future requirements of data centers and serves as a reference for some of the most advanced and promising solutions proposed by researchers from leading universities, research labs, and companies. The work also includes several novel architectures, each demonstrating different technologies such as optical circuits, optical switching, MIMO optical OFDM, and others. Additionally, Optical Interconnects for Future Data Center Networks provides invaluable insights into the benefits and advantages of optical interconnects and how they can be a promising alternative for future data center networks.

  12. Add/drop filters based on SiC technology for optical interconnects

    International Nuclear Information System (INIS)

    Vieira, M; Vieira, M A; Louro, P; Fantoni, A; Silva, V

    2014-01-01

    In this paper we demonstrate an add/drop filter based on SiC technology. Tailoring of the channel bandwidth and wavelength is experimentally demonstrated. The concept is extended to implement a 1 by 4 wavelength division multiplexer with channel separation in the visible range. The device consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure. Several monochromatic pulsed lights, separately or in a polychromatic mixture illuminated the device. Independent tuning of each channel is performed by steady state violet bias superimposed either from the front and back sides. Results show that, front background enhances the light-to-dark sensitivity of the long and medium wavelength channels and quench strongly the others. Back violet background has the opposite behaviour. This nonlinearity provides the possibility for selective removal or addition of wavelengths. An optoelectronic model is presented and explains the light filtering properties of the add/drop filter, under different optical bias conditions

  13. Digital optical interconnects for photonic computing

    Science.gov (United States)

    Guilfoyle, Peter S.; Stone, Richard V.; Zeise, Frederick F.

    1994-05-01

    A 32-bit digital optical computer (DOC II) has been implemented in hardware utilizing 8,192 free-space optical interconnects. The architecture exploits parallel interconnect technology by implementing microcode at the primitive level. A burst mode of 0.8192 X 1012 binary operations per sec has been reliably demonstrated. The prototype has been successful in demonstrating general purpose computation. In addition to emulating the RISC instruction set within the UNIX operating environment, relational database text search operations have been implemented on DOC II.

  14. Organic optoelectronics

    CERN Document Server

    Hu, Wenping; Gong, Xiong; Zhan, Xiaowei; Fu, Hongbing; Bjornholm, Thomas

    2012-01-01

    Written by internationally recognized experts in the field with academic as well as industrial experience, this book concisely yet systematically covers all aspects of the topic.The monograph focuses on the optoelectronic behavior of organic solids and their application in new optoelectronic devices. It covers organic electroluminescent materials and devices, organic photonics, materials and devices, as well as organic solids in photo absorption and energy conversion. Much emphasis is laid on the preparation of functional materials and the fabrication of devices, from materials synthesis a

  15. A one-semester course in modeling of VSLI interconnections

    CERN Document Server

    Goel, Ashok

    2015-01-01

    Quantitative understanding of the parasitic capacitances and inductances, and the resultant propagation delays and crosstalk phenomena associated with the metallic interconnections on the very large scale integrated (VLSI) circuits has become extremely important for the optimum design of the state-of-the-art integrated circuits. More than 65 percent of the delays on the integrated circuit chip occur in the interconnections and not in the transistors on the chip. Mathematical techniques to model the parasitic capacitances, inductances, propagation delays, crosstalk noise, and electromigration-induced failure associated with the interconnections in the realistic high-density environment on a chip will be discussed. A One-Semester Course in Modeling of VLSI Interconnections also includes an overview of the future interconnection technologies for the nanotechnology circuits.

  16. Telemedicine optoelectronic biomedical data processing system

    Science.gov (United States)

    Prosolovska, Vita V.

    2010-08-01

    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  17. Optoelectronics in TESLA, LHC and pi-of-the-sky experiments

    CERN Document Server

    Romaniuk, Ryszard; Simrock, Stefan; Wrochna, Grzegorz

    2004-01-01

    Optical and optoelectronics technologies are more and more widely used in the biggest world experiments of high energy and nuclear physics, as well as in the astronomy. The paper is a kind of a broad digest describing the usage of optoelectronics is such experiments and information about some of the involved teams. The described experiments include: TESLA linear accelerator and FEL, Compact Muon Solenoid at LHC and recently started pi-of-the-sky global gamma ray bursts (with associated optical flashes) observation experiment. Optoelectronics and photonics offer several key features which are either extending the technical parameters of existing solutions or adding quite new practical application possibilities. Some of these favorable features of photonic systems are: high selectivity of optical sensors, immunity to some kinds of noise processes, extremely broad bandwidth exchangeable for either terabit rate transmission or ultrashort pulse generation, parallel image processing capability, etc. The following g...

  18. Back-end interconnection. A generic concept for high volume manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Bosman, J.; Budel, T.; De Kok, C.J.G.M.

    2013-10-15

    The general method to realize series connection in thin film PV modules is monolithical interconnection through a sequence of laser scribes (P1, P2 and P3) and layer depositions. This method however implies that the deposition processes are interrupted several times, an undesirable situation in high volume processing. In order to eliminate this drawback we focus our developments on the so called 'back-end interconnection concept' in which series interconnection takes place AFTER the deposition of the functional layers of the thin film PV device. The process of making a back-end interconnection combines laser scribing, curing, sintering and inkjet processes. These different processes interacts with each other and are investigated in order to create processing strategies that are robust to ensure high volume production. The generic approach created a technology base that can be applied to any thin film PV technology.

  19. Ultra-Stretchable Interconnects for High-Density Stretchable Electronics

    Directory of Open Access Journals (Sweden)

    Salman Shafqat

    2017-09-01

    Full Text Available The exciting field of stretchable electronics (SE promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS-type process recipes using bulk integrated circuit (IC microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.

  20. Opto-electronic system for a formal neural network

    Science.gov (United States)

    Heggarty, Keven

    A study on the construction of an optoelectronic system which makes use of the capacities of holographic optics for performing interconnections is presented. In the chosen application (digit recognition) the system acts as an associative memory treating two dimensional data structures (images) in parallel. Starting from the Hopfield model, the synaptic matrix algorithm is modified to adapt the network to optical implementation and improve its discrimination of similar memory vectors. The approach leads to a correlation-reconstruction interpretation of pseudo-inverse techniques. The coding of the computed generated hologram used to perform the connections between two planes which form the outputs and the inputs of the neurons is addressed. This hologram is unusual in that it fulfills simultaneously the necessary correlation and reconstruction functions. The standard techniques of digital holography, usually optimized for one or the other of these functions, is therefore adapted to the specific needs of the connection hologram. In particular, the reduction of the dynamic range of the hologram, whilst retaining the correlation function and a useful degree of shift invariance, is demonstrated. The construction of the prototype system and the adaptation of a laser lithography facility to the fabrication of the holograms are described. The potential of the system is illustrated with experimental results demonstrating its capacity to recognize and discriminate to correlated images from noisy, translated input images. Generalization of the system for use as an interconnection stage in more complicated architectures is illustrated.

  1. Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at National Taipei University of Technology)

    Energy Technology Data Exchange (ETDEWEB)

    Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division

    2016-11-14

    These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at National Taipei University of Technology. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

  2. Dental impression technique using optoelectronic devices

    Science.gov (United States)

    Sinescu, Cosmin; Barua, Souman; Topala, Florin Ionel; Negrutiu, Meda Lavinia; Duma, Virgil-Florin; Gabor, Alin Gabriel; Zaharia, Cristian; Bradu, Adrian; Podoleanu, Adrian G.

    2018-03-01

    INTRODUCTION: The use of Optical Coherence Tomography (OCT) as a non-invasive and high precision quantitative information providing tool has been well established by researches within the last decade. The marginal discrepancy values can be scrutinized in optical biopsy made in three dimensional (3D) micro millimetre scale and reveal detailed qualitative and quantitative information of soft and hard tissues. OCT-based high resolution 3D images can provide a significant impact on finding recurrent caries, restorative failure, analysing the precision of crown preparation, and prosthetic elements marginal adaptation error with the gingiva and dental hard tissues. During the CAD/CAM process of prosthodontic restorations, the circumvent of any error is important for the practitioner and the technician to reduce waste of time and material. Additionally, OCT images help to achieve a new or semi-skilled practitioner to analyse their crown preparation works and help to develop their skills faster than in a conventional way. The aim of this study is to highlight the advantages of OCT in high precision prosthodontic restorations. MATERIALS AND METHODS: 25 preparations of frontal and lateral teeth were performed for 7 different patients. The impressions of the prosthetic fields were obtained both using a conventional optoelectronic system (Apolo Di, Syrona) and a Spectral Domain using OCT (Dental prototype, working at 860 nm). For the conventional impression technique the preparation margins were been prelevated by gingival impregnated cords. No specific treatments were performed by the OCT impression technique. RESULTS: The scanning performed by conventional optoelectronic system proved to be quick and accurate in terms of impression technology. The results were represented by 3D virtual models obtained after the scanning procedure was completed. In order to obtain a good optical impression a gingival retraction cord was inserted between the prepared tooth and the gingival

  3. Thin film technologies for optoelectronic components in fiber optic communication

    Science.gov (United States)

    Perinati, Agostino

    1998-02-01

    will grow at an annual average rate of 22 percent from 1.3 million fiber-km in 1995 to 3.5 million fiber-km in 2000. The worldwide components market-cable, transceivers and connectors - 6.1 billion in 1994, is forecasted to grow and show a 19 percent combined annual growth rate through the year 2000 when is predicted to reach 17.38 billion. Fiber-in-the-loop and widespread use of switched digital services will dominate this scenario being the fiber the best medium for transmitting multimedia services. As long as communication will partially replace transportation, multimedia services will push forward technology for systems and related components not only for higher performances but for lower cost too in order to get the consumers wanting to buy the new services. In the long distance transmission area (trunk network) higher integration of electronic and optoelectronic functions are required for transmitter and receiver in order to allow for higher system speed, moving from 2.5 Gb/s to 5, 10, 40 Gb/s; narrow band wavelength division multiplexing (WDM) filters are required for higher transmission capacity through multiwavelength technique and for optical amplifier. In the access area (distribution network) passive components as splitters, couplers, filters are needed together with optical amplifiers and transceivers for point-to-multipoint optical signal distribution: main issue in this area is the total cost to be paid by the customer for basic and new services. Multimedia services evolution, through fiber to the home and to the desktop approach, will be mainly affected by the availability of technologies suitable for component consistent integration, high yield manufacturing processes and final low cost. In this paper some of the optoelectronic components and related thin film technologies expected to mainly affect the fiber optic transmission evolution, either for long distance telecommunication systems or for subscriber network, are presented.

  4. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

  5. Digital optical computers at the optoelectronic computing systems center

    Science.gov (United States)

    Jordan, Harry F.

    1991-01-01

    The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

  6. Updating Small Generator Interconnection Procedures for New Market Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Coddington, M.; Fox, K.; Stanfield, S.; Varnado, L.; Culley, T.; Sheehan, M.

    2012-12-01

    Federal and state regulators are faced with the challenge of keeping interconnection procedures updated against a backdrop of evolving technology, new codes and standards, and considerably transformed market conditions. This report is intended to educate policymakers and stakeholders on beneficial reforms that will keep interconnection processes efficient and cost-effective while maintaining a safe and reliable power system.

  7. Adapting Memory Hierarchies for Emerging Datacenter Interconnects

    Institute of Scientific and Technical Information of China (English)

    江涛; 董建波; 侯锐; 柴琳; 张立新; 孙凝晖; 田斌

    2015-01-01

    Efficient resource utilization requires that emerging datacenter interconnects support both high performance communication and efficient remote resource sharing. These goals require that the network be more tightly coupled with the CPU chips. Designing a new interconnection technology thus requires considering not only the interconnection itself, but also the design of the processors that will rely on it. In this paper, we study memory hierarchy implications for the design of high-speed datacenter interconnects—particularly as they affect remote memory access—and we use PCIe as the vehicle for our investigations. To that end, we build three complementary platforms: a PCIe-interconnected prototype server with which we measure and analyze current bottlenecks; a software simulator that lets us model microarchitectural and cache hierarchy changes;and an FPGA prototype system with a streamlined switchless customized protocol Thunder with which we study hardware optimizations outside the processor. We highlight several architectural modifications to better support remote memory access and communication, and quantify their impact and limitations.

  8. Optical interconnection networks for high-performance computing systems

    International Nuclear Information System (INIS)

    Biberman, Aleksandr; Bergman, Keren

    2012-01-01

    Enabled by silicon photonic technology, optical interconnection networks have the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. Chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, offer unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of our work, we demonstrate such feasibility of waveguides, modulators, switches and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. We propose novel silicon photonic devices, subsystems, network topologies and architectures to enable unprecedented performance of these photonic interconnection networks. Furthermore, the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers. (review article)

  9. Optoelectronic Mounting Structure

    Science.gov (United States)

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  10. Recent advances in flexible and wearable organic optoelectronic devices

    Science.gov (United States)

    Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

    2018-01-01

    Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

  11. National Offshore Wind Energy Grid Interconnection Study

    Energy Technology Data Exchange (ETDEWEB)

    Daniel, John P. [ABB Inc; Liu, Shu [ABB Inc; Ibanez, Eduardo [National Renewable Energy Laboratory; Pennock, Ken [AWS Truepower; Reed, Greg [University of Pittsburgh; Hanes, Spencer [Duke Energy

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States. A total of 54GW of offshore wind was assumed to be the target for the analyses conducted. A variety of issues are considered including: the anticipated staging of offshore wind; the offshore wind resource availability; offshore wind energy power production profiles; offshore wind variability; present and potential technologies for collection and delivery of offshore wind energy to the onshore grid; potential impacts to existing utility systems most likely to receive large amounts of offshore wind; and regulatory influences on offshore wind development. The technologies considered the reliability of various high-voltage ac (HVAC) and high-voltage dc (HVDC) technology options and configurations. The utility system impacts of GW-scale integration of offshore wind are considered from an operational steady-state perspective and from a regional and national production cost perspective.

  12. New technology for improved utilization of the interconnected power system; Ny teknologi for bedre utnyttelse av overfoerings-systemet

    Energy Technology Data Exchange (ETDEWEB)

    Enger, A.K.

    1996-12-31

    The present paper deals with methods used for improving the utilization of interconnected power systems. The author discusses new technologies for improvement and safety of power transmission. Main themes covered in this paper are HVDC (High Voltage DC) systems in Norway, possibilities of load management control, other possible/necessary measures in the grid system, and the development and trends. 21 figs.

  13. SDN Data Center Performance Evaluation of Torus and Hypercube Interconnecting Schemes

    DEFF Research Database (Denmark)

    Andrus, Bogdan-Mihai; Vegas Olmos, Juan José; Mehmeri, Victor

    2015-01-01

    — By measuring throughput, delay, loss-rate and jitter, we present how SDN framework yields a 45% performance increase in highly interconnected topologies like torus and hypercube compared to current Layer2 switching technologies, applied to data center architectures......— By measuring throughput, delay, loss-rate and jitter, we present how SDN framework yields a 45% performance increase in highly interconnected topologies like torus and hypercube compared to current Layer2 switching technologies, applied to data center architectures...

  14. Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

    Science.gov (United States)

    Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

    2013-10-13

    Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

  15. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  16. A whole-process progressive training mode to foster optoelectronic students' innovative practical ability

    Science.gov (United States)

    Zhong, Hairong; Xu, Wei; Hu, Haojun; Duan, Chengfang

    2017-08-01

    This article analyzes the features of fostering optoelectronic students' innovative practical ability based on the knowledge structure of optoelectronic disciplines, which not only reveals the common law of cultivating students' innovative practical ability, but also considers the characteristics of the major: (1) The basic theory is difficult, and the close combination of science and technology is obvious; (2)With the integration of optics, mechanics, electronics and computer, the system technology is comprehensive; (3) It has both leading-edge theory and practical applications, so the benefit of cultivating optoelectronic students is high ; (4) The equipment is precise and the practice is costly. Considering the concept and structural characteristics of innovative and practical ability, and adhering to the idea of running practice through the whole process, we put forward the construction of three-dimensional innovation and practice platform which consists of "Synthetically Teaching Laboratory + Innovation Practice Base + Scientific Research Laboratory + Major Practice Base + Joint Teaching and Training Base", and meanwhile build a whole-process progressive training mode to foster optoelectronic students' innovative practical ability, following the process of "basic experimental skills training - professional experimental skills training - system design - innovative practice - scientific research project training - expanded training - graduation project": (1) To create an in - class practical ability cultivation environment that has distinctive characteristics of the major, with the teaching laboratory as the basic platform; (2) To create an extra-curricular innovation practice activities cultivation environment that is closely linked to the practical application, with the innovation practice base as a platform for improvement; (3) To create an innovation practice training cultivation environment that leads the development of cutting-edge, with the scientific

  17. Integrated NEMS and optoelectronics for sensor applications.

    Energy Technology Data Exchange (ETDEWEB)

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R. (Symphony Acoustics, Rio Rancho, NM); Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade (Symphony Acoustics, Rio Rancho, NM); Okandan, Murat; Peterson, Kenneth Allen

    2008-01-01

    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  18. Deformable paper origami optoelectronic devices

    KAUST Repository

    He, Jr-Hau

    2017-01-19

    Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a deformable pattern. Thin electrode layers and semiconductor nanowire layers can be attached to the substrate, creating the optoelectronic device. The devices can be highly deformable, e.g. capable of undergoing strains of 500% or more, bending angles of 25° or more, and/or twist angles of 270° or more. Methods of making the deformable optoelectronic devices and methods of using, e.g. as a photodetector, are also provided.

  19. Interconnection Guidelines

    Science.gov (United States)

    The Interconnection Guidelines provide general guidance on the steps involved with connecting biogas recovery systems to the utility electrical power grid. Interconnection best practices including time and cost estimates are discussed.

  20. Chip-package nano-structured copper and nickel interconnections with metallic and polymeric bonding interfaces

    Science.gov (United States)

    Aggarwal, Ankur

    With the semiconductor industry racing toward a historic transition, nano chips with less than 45 nm features demand I/Os in excess of 20,000 that support computing speed in terabits per second, with multi-core processors aggregately providing highest bandwidth at lowest power. On the other hand, emerging mixed signal systems are driving the need for 3D packaging with embedded active components and ultra-short interconnections. Decreasing I/O pitch together with low cost, high electrical performance and high reliability are the key technological challenges identified by the 2005 International Technology Roadmap for Semiconductors (ITRS). Being able to provide several fold increase in the chip-to-package vertical interconnect density is essential for garnering the true benefits of nanotechnology that will utilize nano-scale devices. Electrical interconnections are multi-functional materials that must also be able to withstand complex, sustained and cyclic thermo-mechanical loads. In addition, the materials must be environmentally-friendly, corrosion resistant, thermally stable over a long time, and resistant to electro-migration. A major challenge is also to develop economic processes that can be integrated into back end of the wafer foundry, i.e. with wafer level packaging. Device-to-system board interconnections are typically accomplished today with either wire bonding or solders. Both of these are incremental and run into either electrical or mechanical barriers as they are extended to higher density of interconnections. Downscaling traditional solder bump interconnect will not satisfy the thermo-mechanical reliability requirements at very fine pitches of the order of 30 microns and less. Alternate interconnection approaches such as compliant interconnects typically require lengthy connections and are therefore limited in terms of electrical properties, although expected to meet the mechanical requirements. A novel chip-package interconnection technology is

  1. Si micro photonics for optical interconnection

    International Nuclear Information System (INIS)

    Wada, K.; Ahn, D.H.; Lim, D.R.; Michel, J.; Kimerling, L.C.

    2006-01-01

    This paper reviews current status of silicon microphotonics and the recent prototype of on-chip optical interconnection. Si microphotonics pursues complementary metal oxide semiconductor (CMOS)-compatibility of photonic devices to reduce the materials diversity eventually to integrate on Si chips. Fractal optical H-trees have been implemented on a chip and found to be a technology breakthrough beyond metal interconnection. It has shown that large RC time constants associated with metal can be eliminated at least long distant data communication on a chip, and eventually improve yield and power issues. This has become the world's first electronic and photonic integrated circuits (EPICs) and the possibility of at least 10 GHz clocking for personal computers has been demonstrated

  2. Impact of Bundle Structure on Performance of on-Chip CNT Interconnects

    International Nuclear Information System (INIS)

    Kuruvilla, N.; Raina, J.P

    2014-01-01

    CNTs are proposed as a promising candidate against copper in deep submicron IC interconnects. Still this technology is in its infancy. Most available literatures on performance predictions of CNT interconnects, have focused only on interconnect geometries using segregated CNTs. Yet during the manufacturing phase, CNTs are obtained usually as a mixture of single-walled and multi-walled CNTs (SWCNTs and MWCNTs). Especially in case of SWCNTs; it is usually available as a mixture of both Semi conducting CNTs and metallic CNTs. This paper attempts to answer whether segregation is inevitable before using them to construct interconnects. This paper attempt to compare the performance variations of bundled CNT interconnects, where bundles are made of segregated CNTs versus mixed CNTs, for future technology nodes using electrical model based analysis. Also a proportionate mixing of different CNTs has been introduced so as to yield a set of criteria to aid the industry in selection of an appropriate bundle structure for use in a specific application with optimum performance. It was found that even the worst case performance of geometries using a mixture of SWCNTs and MWCNTs was better than copper. These results also reveal that, for extracting optimum performance vide cost matrix, the focus should be more on diameter controlled synthesis than on segregation.

  3. Transurban interconnectivities

    DEFF Research Database (Denmark)

    Jørgensen, Claus Møller

    2012-01-01

    This essay discusses the interpretation of the revolutionary situations of 1848 in light of recent debates on interconnectivity in history. The concept of transurban interconnectivities is proposed as the most precise concept to capture the nature of interconnectivity in 1848. It is argued....... It is argued that circulating political communication accounts for similarities with respect to political agenda, organisational form and political repertoire evident in urban settings across Europe. This argument is supported by a series of examples of local organisation and local appropriations of liberalism...

  4. Optical and Optoelectronic Property Analysis of Nanomaterials inside Transmission Electron Microscope.

    Science.gov (United States)

    Fernando, Joseph F S; Zhang, Chao; Firestein, Konstantin L; Golberg, Dmitri

    2017-12-01

    In situ transmission electron microscopy (TEM) allows one to investigate nanostructures at high spatial resolution in response to external stimuli, such as heat, electrical current, mechanical force and light. This review exclusively focuses on the optical, optoelectronic and photocatalytic studies inside TEM. With the development of TEMs and specialized TEM holders that include in situ illumination and light collection optics, it is possible to perform optical spectroscopies and diverse optoelectronic experiments inside TEM with simultaneous high resolution imaging of nanostructures. Optical TEM holders combining the capability of a scanning tunneling microscopy probe have enabled nanomaterial bending/stretching and electrical measurements in tandem with illumination. Hence, deep insights into the optoelectronic property versus true structure and its dynamics could be established at the nanometer-range precision thus evaluating the suitability of a nanostructure for advanced light driven technologies. This report highlights systems for in situ illumination of TEM samples and recent research work based on the relevant methods, including nanomaterial cathodoluminescence, photoluminescence, photocatalysis, photodeposition, photoconductivity and piezophototronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Optoelectronics of Molecules and Polymers

    CERN Document Server

    Moliton, André

    2006-01-01

    Optoelectronic devices are being developed at an extraordinary rate. Organic light emitting diodes, photovoltaic devices and electro-optical modulators are pivotal to the future of displays, photosensors and solar cells, and communication technologies. This book details the theories underlying the relevant mechanisms in organic materials and covers, at a basic level, how the organic components are made. The first part of this book introduces the fundamental theories used to detail ordered solids and localised energy levels. The methods used to determine energy levels in perfectly ordered molecular and macromolecular systems are discussed, making sure that the effects of quasi-particles are not missed. The function of excitons and their transfer between two molecules are studied, and the problems associated with interfaces and charge injection into resistive media are presented. The second part details technological aspects such as the fabrication of devices based on organic materials by dry etching. The princ...

  6. Photonic Structure-Integrated Two-Dimensional Material Optoelectronics

    Directory of Open Access Journals (Sweden)

    Tianjiao Wang

    2016-12-01

    Full Text Available The rapid development and unique properties of two-dimensional (2D materials, such as graphene, phosphorene and transition metal dichalcogenides enable them to become intriguing candidates for future optoelectronic applications. To maximize the potential of 2D material-based optoelectronics, various photonic structures are integrated to form photonic structure/2D material hybrid systems so that the device performance can be manipulated in controllable ways. Here, we first introduce the photocurrent-generation mechanisms of 2D material-based optoelectronics and their performance. We then offer an overview and evaluation of the state-of-the-art of hybrid systems, where 2D material optoelectronics are integrated with photonic structures, especially plasmonic nanostructures, photonic waveguides and crystals. By combining with those photonic structures, the performance of 2D material optoelectronics can be further enhanced, and on the other side, a high-performance modulator can be achieved by electrostatically tuning 2D materials. Finally, 2D material-based photodetector can also become an efficient probe to learn the light-matter interactions of photonic structures. Those hybrid systems combine the advantages of 2D materials and photonic structures, providing further capacity for high-performance optoelectronics.

  7. Application of a new interconnection technology for the ATLAS pixel upgrade at SLHC

    CERN Document Server

    Macchiolo, A; Beimforde, M; Moser, H G; Nisius, R; Richter, R H

    2009-01-01

    We present an R&D activity aiming towards a new detector concept in the framework of the ATLAS pixel detector upgrade exploiting a vertical integration technology developed at the Fraunhofer Institute IZMMunich. The Solid-Liquid InterDiffusion (SLID) technique is investigated as an alternative to the bump-bonding process. We also investigate the extraction of the signals from the back of the read-out chip through Inter-Chip-Vias to achieve a higher fraction of active area with respect to the present ATLAS pixel module. We will present the layout and the first results obtained with a production of test-structures designed to investigate the SLID interconnection efficiency as a function of different parameters, i.e. the pixel size and pitch, as well as the planarity of the underlying layers.

  8. Optical interconnects

    CERN Document Server

    Chen, Ray T

    2006-01-01

    This book describes fully embedded board level optical interconnect in detail including the fabrication of the thin-film VCSEL array, its characterization, thermal management, the fabrication of optical interconnection layer, and the integration of devices on a flexible waveguide film. All the optical components are buried within electrical PCB layers in a fully embedded board level optical interconnect. Therefore, we can save foot prints on the top real estate of the PCB and relieve packaging difficulty reduced by separating fabrication processes. To realize fully embedded board level optical

  9. Optoelectronic line transmission an introduction to fibre optics

    CERN Document Server

    Tricker, Raymond L

    2013-01-01

    Optoelectronic Line Transmission: An Introduction to Fibre Optics presents a basic introduction as well as a background reference manual on fiber optic transmission. The book discusses the basic principles of optical line transmission; the advantages and disadvantages of optical fibers and optoelectronic signalling; the practical applications of optoelectronics; and the future of optoelectronics. The text also describes the theories of optical line transmission; fibers and cables for optical transmission; transmitters including light-emitting diodes and lasers; and receivers including photodi

  10. An RLC interconnect analyzable crosstalk model considering self-heating effect

    International Nuclear Information System (INIS)

    Zhu Zhang-Ming; Liu Shu-Bin

    2012-01-01

    According to the thermal profile of actual multilevel interconnects, in this paper we propose a temperature distribution model of multilevel interconnects and derive an analytical crosstalk model for the distributed resistance—inductance—capacitance (RLC) interconnect considering effect of thermal profile. According to the 65-nm complementary metal—oxide semiconductor (CMOS) process, we compare the proposed RLC analytical crosstalk model with the Hspice simulation results for different interconnect coupling conditions and the absolute error is within 6.5%. The computed results of the proposed analytical crosstalk model show that RCL crosstalk decreases with the increase of current density and increases with the increase of insulator thickness. This analytical crosstalk model can be applied to the electronic design automation (EDA) and the design optimization for nanometer CMOS integrated circuits. (interdisciplinary physics and related areas of science and technology)

  11. Parallel interconnect for a novel system approach to short distance high information transfer data links

    Science.gov (United States)

    Raskin, Glenn; Lebby, Michael S.; Carney, F.; Kazakia, M.; Schwartz, Daniel B.; Gaw, Craig A.

    1997-04-01

    The OPTOBUSTM family of products provides for high performance parallel interconnection utilizing optical links in a 10-bit wide bi-directional configuration. The link is architected to be 'transparent' in that it is totally asynchronous and dc coupled so that it can be treated as a perfect cable with extremely low skew and no losses. An optical link consists of two identical transceiver modules and a pair of connectorized 62.5 micrometer multi mode fiber ribbon cables. The OPTOBUSTM I link provides bi- directional functionality at 4 Gbps (400 Mbps per channel), while the OPTOBUSTM II link will offer the same capability at 8 Gbps (800 Mbps per channel). The transparent structure of the OPTOBUSTM links allow for an arbitrary data stream regardless of its structure. Both the OPTOBUSTM I and OPTOBUSTM II transceiver modules are packaged as partially populated 14 by 14 pin grid arrays (PGA) with optical receptacles on one side of the module. The modules themselves are composed of several elements; including passives, integrated circuits optoelectronic devices and optical interface units (OIUs) (which consist of polymer waveguides and a specially designed lead frame). The initial offering of the modules electrical interface utilizes differential CML. The CML line driver sinks 5 mA of current into one of two pins. When terminated with 50 ohm pull-up resistors tied to a voltage between VCC and VCC-2, the result is a differential swing of plus or minus 250 mV, capable of driving standard PECL I/Os. Future offerings of the OPTOBUSTM links will incorporate LVDS and PECL interfaces as well as CML. The integrated circuits are silicon based. For OPTOBUSTM I links, a 1.5 micrometer drawn emitter NPN bipolar process is used for the receiver and an enhanced 0.8 micrometer CMOS process for the laser driver. For OPTOBUSTM II links, a 0.8 micrometer drawn emitter NPN bipolar process is used for the receiver and the driver IC utilizes 0.8 micrometer BiCMOS technology. The OPTOBUSTM

  12. Interconnection blocks: a method for providing reusable, rapid, multiple, aligned and planar microfluidic interconnections

    International Nuclear Information System (INIS)

    Sabourin, D; Snakenborg, D; Dufva, M

    2009-01-01

    In this paper a method is presented for creating 'interconnection blocks' that are re-usable and provide multiple, aligned and planar microfluidic interconnections. Interconnection blocks made from polydimethylsiloxane allow rapid testing of microfluidic chips and unobstructed microfluidic observation. The interconnection block method is scalable, flexible and supports high interconnection density. The average pressure limit of the interconnection block was near 5.5 bar and all individual results were well above the 2 bar threshold considered applicable to most microfluidic applications

  13. Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance

    KAUST Repository

    Banavoth, Murali; Yengel, Emre; Peng, Wei; Chen, Zhijie; Alias, Mohd Sharizal; Alarousu, Erkki; Ooi, Boon S.; Burlakov, Victor; Goriely, Alain; Eddaoudi, Mohamed; Bakr, Osman; Mohammed, Omar F.

    2016-01-01

    Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including

  14. Welfare and competition effects of electricity interconnection between Ireland and Great Britain

    International Nuclear Information System (INIS)

    Malaguzzi Valeri, Laura

    2009-01-01

    This study analyzes the effects of additional interconnection on welfare and competition in the Irish electricity market. I simulate the wholesale electricity markets of the island of Ireland and Great Britain for 2005. I find that in order for the two markets to be integrated in 2005, additional interconnection would have to be large. The amount of interconnection decreases for high costs of carbon, since this causes the markets to become more similar. This suggests that in the absence of strategic behavior of firms, most of the gains from trade derive not from differences in size between countries, but from technology differences and are strongly influenced by fuel and carbon costs. Social welfare increases with interconnection, although at a decreasing rate. As the amount of interconnection increases, there are also positive effects on competition in Ireland, the less competitive of the two markets. Finally, it is unlikely that private investors will pay for the optimal amount of interconnection since their returns are significantly smaller than the total social benefit of interconnection. (author)

  15. Measuring processes with opto-electronic semiconductor components

    International Nuclear Information System (INIS)

    1985-01-01

    This is a report on the state of commercially available semiconductor emitters and detectors for the visible, near, middle and remote infrared range. A survey is given on the distance, speed, flow and length measuring techniques using opto-electronic components. Automatic focussing, the use of light barriers, non-contact temperature measurements, spectroscopic gas, liquid and environmental measurement techniques and gas analysis in medical techniques show further applications of the new components. The modern concept of guided radiation in optical fibres and their use in system technology is briefly explained. (DG) [de

  16. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    Energy Technology Data Exchange (ETDEWEB)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  17. Knowledge Access in Rural Inter-connected Areas Network ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Knowledge Access in Rural Inter-connected Areas Network (KariaNet) - Phase II ... and indigenous knowledge using information and communication technologies (ICTs) ... for research proposals on the aforementioned topics, action-research projects, ... Evaluating knowledge-sharing methods to improve land utilization and ...

  18. Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

    Science.gov (United States)

    Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

    2016-06-01

    Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

    Directory of Open Access Journals (Sweden)

    Andre F. S. Guedes

    2014-06-01

    Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

  20. FY 1999 report on the results of the R and D of femtosecond technology. Development of ultra-short pulse optoelectronics technology; 1999 nendo femutobyo technology no kenkyu kaihatsu seika hokokusho. Chotan pulse hikari electronics gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The paper described the FY 1999 results of the R and D of femtosecond technology. For the purpose of creating new industrial basement technology which supports the highly information-oriented society in the 21st century, the ultra-high speed electronics technology is indispensable which is beyond speed limits of the existing electronics technology and has new functionality. The ultra-high speed electronics basement technology is established through the R and D of the technology to control the state of light and electronics in the femtosecond time domain (10{sup -15} - 10{sup -12} second). Themes of the R and D are technology to generate/transmit femtosecond optical pulse, technology for control/distribution, and ultra-short pulse optoelectronics common basement technology. In FY 1999, a lot of results were obtained in the following: generation of the pulse train highly repeated at 500GHz in semiconductor laser; 139km transmission of 250fs optical pulse; switching movement at ultra-high speed of 150fs-1.2ps in transition among subbands of GaN base and Sb base materials; DEMUXA movement toward 160-10Gb/s in Mach-Zehnder type optical switch. (NEDO)

  1. Optoelectronic inventory system for special nuclear material

    International Nuclear Information System (INIS)

    Sieradzki, F.H.

    1994-01-01

    In support of the Department of Energy's Dismantlement Program, the Optoelectronics Characterization and Sensor Development Department 2231 at Sandia National Laboratories/New Mexico has developed an in situ nonintrusive Optoelectronic Inventory System (OIS) that has the potential for application wherever periodic inventory of selected material is desired. Using a network of fiber-optic links, the OIS retrieves and stores inventory signatures from data storage devices (which are permanently attached to material storage containers) while inherently providing electromagnetic pulse immunity and electrical noise isolation. Photovoltaic cells (located within the storage facility) convert laser diode optic power from a laser driver to electrical energy. When powered and triggered, the data storage devices sequentially output their digital inventory signatures through light-emitting diode/photo diode data links for retrieval and storage in a mobile data acquisition system. An item's exact location is determined through fiber-optic network and software design. The OIS provides an on-demand method for obtaining acceptable inventory reports while eliminating the need for human presence inside the material storage facility. By using modularization and prefabricated construction with mature technologies and components, an OIS installation with virtually unlimited capacity can be tailored to the customer's requirements

  2. Photovoltaic sub-cell interconnects

    Energy Technology Data Exchange (ETDEWEB)

    van Hest, Marinus Franciscus Antonius Maria; Swinger Platt, Heather Anne

    2017-05-09

    Photovoltaic sub-cell interconnect systems and methods are provided. In one embodiment, a photovoltaic device comprises a thin film stack of layers deposited upon a substrate, wherein the thin film stack layers are subdivided into a plurality of sub-cells interconnected in series by a plurality of electrical interconnection structures; and wherein the plurality of electrical interconnection structures each comprise no more than two scribes that penetrate into the thin film stack layers.

  3. Advanced Platform for Development and Evaluation of Grid Interconnection Systems Using Hardware-in-the-Loop: Part III -- Grid Interconnection System Evaluator: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, B.; Shirazi, M.; Coddington, M.; Kroposki, B.

    2013-01-01

    This paper, presented at the IEEE Green Technologies Conference 2013, describes a Grid Interconnection System Evaluator (GISE) that leverages hardware-in-the-loop (HIL) simulation techniques to rapidly evaluate the grid interconnection standard conformance of an ICS according to the procedures in IEEE Std 1547.1 (TM). The architecture and test sequencing of this evaluation tool, along with a set of representative ICS test results from three different photovoltaic (PV) inverters, are presented. The GISE adds to the National Renewable Energy Laboratory's (NREL) evaluation platform that now allows for rapid development of ICS control algorithms using controller HIL (CHIL) techniques, the ability to test the dc input characteristics of PV-based ICSs through the use of a PV simulator capable of simulating real-world dynamics using power HIL (PHIL), and evaluation of ICS grid interconnection conformance.

  4. EUROPEAN ENERGY INTERCONNECTION EFFECTS ON THE ROMANIAN ECONOMY

    Directory of Open Access Journals (Sweden)

    Ionescu Mihaela

    2014-07-01

    Full Text Available In this paper the author wants to exemplify the extent to which economic growth in Romania is influenced by the current power system infrastructure investments in Europe. Electricity transmission infrastructure in Romania is at a turning point. The high level of security of supply, delivery efficiency in a competitive internal market are dependent on significant investment, both within the country and across borders. Since the economic crisis makes investment financing is increasingly difficult, it is necessary that they be targeted as well. The European Union has initiated the “Connecting Europe” through which investments are allocated to European energy network interconnection of energy. The action plan for this strategy will put a greater emphasis on investments that require hundreds of billions of euro in new technologies, infrastructure, improve energy intensity, low carbon energy technologies. Romania's energy challenge will depend on the new interconnection modern and smart, both within the country and other European countries, energy saving practices and technologies. This challenge is particularly important as Romania has recovered severe gaps in the level of economic performance compared to developed countries. Such investment will have a significant impact on transmission costs, especially electricity, while network tariffs will rise slightly. Some costs will be higher due to support programs in renewable energy nationwide.Measures are more economically sustainable to maintain or even reinforce the electricity market, which system can be flexible in order to address any issues of adequacy. These measures include investments in border infrastructure (the higher the network, so it is easier to evenly distribute energy from renewable sources, to measure demand response and energy storage solutions.An integrated European infrastructure will ensure economic growth in countries interconnected and thus Romania. Huge energy potential of

  5. Radiation effects in optoelectronic devices

    International Nuclear Information System (INIS)

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given

  6. Production and characterization of SLID interconnected n-in-p pixel modules with 75 micron thin silicon sensors

    CERN Document Server

    Andricek, L; Macchiolo, A; Moser, H.G; Nisius, R; Richter, R.H; Terzo, S; Weigell, P

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. T...

  7. Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors

    CERN Document Server

    Andricek, L; Macchiolo, A.; Moser, H.-G.; Nisius, R.; Richter, R.H.; Terzo, S.; Weigell, P.

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tunability, charge collection, cluster sizes and hit efficiencies. Targeting at ...

  8. Interconnection blocks with minimal dead volumes permitting planar interconnection to thin microfluidic devices

    DEFF Research Database (Denmark)

    Sabourin, David; Snakenborg, Detlef; Dufva, Martin

    2010-01-01

    We have previously described 'Interconnection Blocks' which are re-usable, non-integrated PDMS blocks which allowing multiple, aligned and planar microfluidic interconnections. Here, we describe Interconnection Block versions with zero dead volumes that allow fluidic interfacing to flat or thin s...

  9. Cu Pillar Low Temperature Bonding and Interconnection Technology of for 3D RF Microsystem

    Science.gov (United States)

    Shi, G. X.; Qian, K. Q.; Huang, M.; Yu, Y. W.; Zhu, J.

    2018-03-01

    In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used the heterogeneous chip such as GaAs integration with Si interposers should be at low temperature. The pillars were constituted by Cu (2 micron) -Ni (2 micron) -Cu (3 micron) -Sn (1 micron) multilayer metal and total height is 8 micron on the front-side of the wafer by using electroplating. The wafer backside Cu pillar is obtained by temporary bonding, thinning and silicon surface etching. The RF interposers are stacked by Cu-Sn eutectic bonding at 260 °C. Analyzed the reliability of different pillar bonding structure.

  10. U.S. Laws and Regulations for Renewable Energy Grid Interconnections

    Energy Technology Data Exchange (ETDEWEB)

    Chernyakhovskiy, Ilya [National Renewable Energy Lab. (NREL), Golden, CO (United States); Tian, Tian [National Renewable Energy Lab. (NREL), Golden, CO (United States); McLaren, Joyce [National Renewable Energy Lab. (NREL), Golden, CO (United States); Miller, Mackay [National Renewable Energy Lab. (NREL), Golden, CO (United States); Geller, Nina [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2016-09-01

    Rapidly declining costs of wind and solar energy technologies, increasing concerns about the environmental and climate change impacts of fossil fuels, and sustained investment in renewable energy projects all point to a not-so-distant future in which renewable energy plays a pivotal role in the electric power system of the 21st century. In light of public pressures and market factors that hasten the transition towards a low-carbon system, power system planners and regulators are preparing to integrate higher levels of variable renewable generation into the grid. Updating the regulations that govern generator interconnections and operations is crucial to ensure system reliability while creating an enabling environment for renewable energy development. This report presents a chronological review of energy laws and regulations concerning grid interconnection procedures in the United States, highlighting the consequences of policies for renewable energy interconnections. Where appropriate, this report places interconnection policies and their impacts on renewable energy within the broader context of power market reform.

  11. Proceedings of the thirty fifth international conference on contemporary trends in optics and optoelectronics: conference digest - extended abstracts

    International Nuclear Information System (INIS)

    2011-01-01

    Optics and optoelectronics are indispensable in all spheres of human activity, ranging from day to day needs to advanced scientific and technological pursuits and their applications for the benefit of the society. This conference covers the following topics: adaptive optics, biomedical optics and imaging, classical and quantum optics, fibre optics, optics for space applications, optical metrology and NDT, optical information processing, optical and optoelectronic materials. Papers relevant to INIS are indexed separately

  12. Ultrafast Graphene Photonics and Optoelectronics

    Science.gov (United States)

    2017-04-14

    AFRL-AFOSR-JP-TR-2017-0032 Ultrafast Graphene Photonics and Optoelectronics Kuang-Hsiung Wu National Chiao Tung University Final Report 04/14/2017...DATES COVERED (From - To) 18 Apr 2013 to 17 Apr 2016 4. TITLE AND SUBTITLE Ultrafast Graphene Photonics and Optoelectronics 5a.  CONTRACT NUMBER 5b...Prescribed by ANSI Std. Z39.18 Final Report for AOARD Grant FA2386-13-1-4022 “Ultrafast Graphene Photonics and Optoelectronics” Date May 23th, 2016

  13. Fabrication method to create high-aspect ratio pillars for photonic coupling of board level interconnects

    Science.gov (United States)

    Debaes, C.; Van Erps, J.; Karppinen, M.; Hiltunen, J.; Suyal, H.; Last, A.; Lee, M. G.; Karioja, P.; Taghizadeh, M.; Mohr, J.; Thienpont, H.; Glebov, A. L.

    2008-04-01

    An important challenge that remains to date in board level optical interconnects is the coupling between the optical waveguides on printed wiring boards and the packaged optoelectronics chips, which are preferably surface mountable on the boards. One possible solution is the use of Ball Grid Array (BGA) packages. This approach offers a reliable attachment despite the large CTE mismatch between the organic FR4 board and the semiconductor materials. Collimation via micro-lenses is here typically deployed to couple the light vertically from the waveguide substrate to the optoelectronics while allowing for a small misalignment between board and package. In this work, we explore the fabrication issues of an alternative approach in which the vertical photonic connection between board and package is governed by a micro-optical pillar which is attached both to the board substrate and to the optoelectronic chips. Such an approach allows for high density connections and small, high-speed detector footprints while maintaining an acceptable tolerance between board and package. The pillar should exhibit some flexibility and thus a high-aspect ratio is preferred. This work presents and compares different fabrication methods and applies different materials for such high-aspect ratio pillars. The different fabrication methods are: photolithography, direct laser writing and deep proton writing. The selection of optical materials that was investigated is: SU8, Ormocers, PU and a multifunctional acrylate polymer. The resulting optical pillars have diameters ranging from 20um up to 80um, with total heights ranging between 30um and 100um (symbol for micron). The aspect-ratio of the fabricated structures ranges from 1.5 to 5.

  14. Traffic Load on Interconnection Lines of Generalized Double Ring Network Structures

    DEFF Research Database (Denmark)

    Pedersen, Jens Myrup; Riaz, Muhammad Tahir; Madsen, Ole Brun

    2004-01-01

    Generalized Double Ring (N2R) network structures possess a number of good properties, but being not planar they are hard to physically embed in communication networks. However, if some of the lines, the interconnection lines, are implemented by wireless technologies, the remaining structure...... consists of two planar rings, which are easily embedded by fiber or other wired solutions. It is shown that for large N2R structures, the interconnection lines carry notably lower loads than the other lines if shortest-path routing is used, and the effects of two other routing schemes are explored, leading...... to lower load on interconnection lines at the price of larger efficient average distance and diameter....

  15. Power System Study for Renewable Energy Interconnection in Malaysia

    International Nuclear Information System (INIS)

    Askar, O F; Ramachandaramurthy, V K

    2013-01-01

    The renewable energy (RE) sector has grown exponentially in Malaysia with the introduction of the Feed-In-Tariff (FIT) by the Ministry of Energy, Green Technology and Water. Photovoltaic, biogas, biomass and mini hydro are among the renewable energy sources which offer a lucrative tariff to incite developers in taking the green technology route. In order to receive the FIT, a developer is required by the utility company to perform a power system analysis which will determine the technical feasibility of an RE interconnection to the utility company's existing grid system. There are a number of aspects which the analysis looks at, the most important being the load flow and fault levels in the network after the introduction of an RE source. The analysis is done by modelling the utility company's existing network and simulating the network with the interconnection of an RE source. The results are then compared to the values before an interconnection is made as well as ensuring the voltage rise or the increase in fault levels do not violate any pre-existing regulations set by the utility company. This paper will delve into the mechanics of performing a load flow analysis and examining the results obtained.

  16. Power System Study for Renewable Energy Interconnection in Malaysia

    Science.gov (United States)

    Askar, O. F.; Ramachandaramurthy, V. K.

    2013-06-01

    The renewable energy (RE) sector has grown exponentially in Malaysia with the introduction of the Feed-In-Tariff (FIT) by the Ministry of Energy, Green Technology and Water. Photovoltaic, biogas, biomass and mini hydro are among the renewable energy sources which offer a lucrative tariff to incite developers in taking the green technology route. In order to receive the FIT, a developer is required by the utility company to perform a power system analysis which will determine the technical feasibility of an RE interconnection to the utility company's existing grid system. There are a number of aspects which the analysis looks at, the most important being the load flow and fault levels in the network after the introduction of an RE source. The analysis is done by modelling the utility company's existing network and simulating the network with the interconnection of an RE source. The results are then compared to the values before an interconnection is made as well as ensuring the voltage rise or the increase in fault levels do not violate any pre-existing regulations set by the utility company. This paper will delve into the mechanics of performing a load flow analysis and examining the results obtained.

  17. Review of Microwave Photonics Technique to Generate the Microwave Signal by Using Photonics Technology

    Science.gov (United States)

    Raghuwanshi, Sanjeev Kumar; Srivastav, Akash

    2017-12-01

    Microwave photonics system provides high bandwidth capabilities of fiber optic systems and also contains the ability to provide interconnect transmission properties, which are virtually independent of length. The low-loss wide bandwidth capability of optoelectronic systems makes them attractive for the transmission and processing of microwave signals, while the development of high-capacity optical communication systems has required the use of microwave techniques in optical transmitters and receivers. These two strands have led to the development of the research area of microwave photonics. So, we can considered microwave photonics as the field that studies the interaction between microwave and optical waves for applications such as communications, radars, sensors and instrumentations. In this paper we have thoroughly reviewed the microwave generation techniques by using photonics technology.

  18. Interconnection policy: a theoretical survey

    Directory of Open Access Journals (Sweden)

    César Mattos

    2003-01-01

    Full Text Available This article surveys the theoretical foundations of interconnection policy. The requirement of an interconnection policy should not be taken for granted in all circumstances, even considering the issue of network externalities. On the other hand, when it is required, an encompassing interconnection policy is usually justified. We provide an overview of the theory on interconnection pricing that results in several different prescriptions depending on which problem the regulator aims to address. We also present a survey on the literature on two-way interconnection.

  19. Integrated Automatic Test System for Airborne Optoelectronic Pods

    International Nuclear Information System (INIS)

    Zhang, Z M; Ding, M J; Wang, L

    2006-01-01

    Based on the introduction of the construction and basic principle of the airborne optoelectronic pod, in accordance with the performance standards of the pod, the total solution scheme of the automatic test system used for testing the combination property is proposed in this paper. The main structure, hardware and software design of the system based on the virtual instruments technology are also discussed in detail. The result of the true run proves the practicality, efficiency, high accuracy and other characteristics of the computer aided testing system based on virtual instruments

  20. Graphene and Two-Dimensional Materials for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Andreas Bablich

    2016-03-01

    Full Text Available This article reviews optoelectronic devices based on graphene and related two-dimensional (2D materials. The review includes basic considerations of process technology, including demonstrations of 2D heterostructure growth, and comments on the scalability and manufacturability of the growth methods. We then assess the potential of graphene-based transparent conducting electrodes. A major part of the review describes photodetectors based on lateral graphene p-n junctions and Schottky diodes. Finally, the progress in vertical devices made from 2D/3D heterojunctions, as well as all-2D heterostructures is discussed.

  1. Laser applications in the electronics and optoelectronics industry in Japan

    Science.gov (United States)

    Washio, Kunihiko

    1999-07-01

    This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

  2. Interconnection blocks: a method for providing reusable, rapid, multiple, aligned and planar microfluidic interconnections

    DEFF Research Database (Denmark)

    Sabourin, David; Snakenborg, Detlef; Dufva, Hans Martin

    2009-01-01

    In this paper a method is presented for creating 'interconnection blocks' that are re-usable and provide multiple, aligned and planar microfluidic interconnections. Interconnection blocks made from polydimethylsiloxane allow rapid testing of microfluidic chips and unobstructed microfluidic observ...

  3. Health and the environment: Examining some interconnections

    International Nuclear Information System (INIS)

    Nair, G.; Castelino, J.; Parr, R.M.

    1994-01-01

    In various ways, the IAEA is working with national and international agencies to broaden scientific understanding of the interconnections between the environment and human health. Often nuclear and related technologies are applied in the search for answers to complex and puzzling questions. This article highlights some of that work, illustrating the dimensions of both the problems and the potential solutions

  4. Assessment of on-farm anaerobic digester grid interconnections

    International Nuclear Information System (INIS)

    Ruhnke, W.

    2006-01-01

    While several anaerobic digestion (AD) pilot plants have recently been built in Canada, early reports suggest that interconnection barriers are delaying their widescale implementation. This paper examined grid interconnection experiences from the perspectives of farmers, local distributing companies (LDCs) and other stakeholders. The aim of the paper was to identify challenges to the implementation of AD systems. Case studies included an Ontario Dairy Herd AD system generating 50 kW; a Saskatchewan hog farm AD system generating 120 kW and an Alberta outdoor beef feedlot AD system generating 1000 kW. Two survey forms were created for project operators, and LDCs. The following 3 category barriers were identified: (1) technical concerns over islanding conditions, power quality requirements, power flow studies and other engineering analyses; (2) business practices barriers such as a lack of response after initial utility contact; and (3) regulatory barriers including the unavailability of fair buy-back rates, the lack of net metering programs, restrictive net metering programs, and pricing issues. It was suggested that collaborative efforts among all stakeholders are needed to resolve barriers quickly. Recommendations included the adoption of uniform technical standards for connecting generators to the grid, as well as adopting standard commercial practices for any required LDC interconnection review. It was also suggested that standard business terms for interconnection agreements should be established. Regulatory principles should be compatible with distributed power choices in regulated and unregulated markets. It was concluded that resolving interconnection barriers is a critical step towards realizing market opportunities available for AD technologies. refs., tabs., figs

  5. A simple encapsulation method for organic optoelectronic devices

    International Nuclear Information System (INIS)

    Sun Qian-Qian; An Qiao-Shi; Zhang Fu-Jun

    2014-01-01

    The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells (PSCs). The power conversion efficiencies (PCE) of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices. (atomic and molecular physics)

  6. 3D interconnect technology based on low temperature copper nanoparticle sintering

    NARCIS (Netherlands)

    Zhang, B.; Carisey, Y.C.P.; Damian, A.; Poelma, R.H.; Zhang, G.Q.; van Zeijl, H.W.; Bi, Keyun; Liu, Sheng; Zhou, Shengjun

    2016-01-01

    We explore a methodology for patterned copper nanoparticle paste for 3D interconnect applications in wafer to wafer (W2W) bonding. A novel fine pitch thermal compression bonding process (sintering) with coated copper nanoparticle paste was developed. Most of the particle size is between 10-30 nm.

  7. Integrated optical circuit engineering V; Proceedings of the Meeting, San Diego, CA, Aug. 17-20, 1987

    Science.gov (United States)

    Mentzer, Mark A.

    Recent advances in the theoretical and practical design and applications of optoelectronic devices and optical circuits are examined in reviews and reports. Topics discussed include system and market considerations, guided-wave phenomena, waveguide devices, processing technology, lithium niobate devices, and coupling problems. Consideration is given to testing and measurement, integrated optics for fiber-optic systems, optical interconnect technology, and optical computing.

  8. A Methodology for Physical Interconnection Decisions of Next Generation Transport Networks

    DEFF Research Database (Denmark)

    Gutierrez Lopez, Jose Manuel; Riaz, M. Tahir; Madsen, Ole Brun

    2011-01-01

    of possibilities when designing the physical network interconnection. This paper develops and presents a methodology in order to deal with aspects related to the interconnection problem of optical transport networks. This methodology is presented as independent puzzle pieces, covering diverse topics going from......The physical interconnection for optical transport networks has critical relevance in the overall network performance and deployment costs. As telecommunication services and technologies evolve, the provisioning of higher capacity and reliability levels is becoming essential for the proper...... development of Next Generation Networks. Currently, there is a lack of specific procedures that describe the basic guidelines to design such networks better than "best possible performance for the lowest investment". Therefore, the research from different points of view will allow a broader space...

  9. State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

    Directory of Open Access Journals (Sweden)

    Eng Png Ching

    2015-01-01

    Full Text Available Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc. and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

  10. Interconnected networks

    CERN Document Server

    2016-01-01

    This volume provides an introduction to and overview of the emerging field of interconnected networks which include multi layer or multiplex networks, as well as networks of networks. Such networks present structural and dynamical features quite different from those observed in isolated networks. The presence of links between different networks or layers of a network typically alters the way such interconnected networks behave – understanding the role of interconnecting links is therefore a crucial step towards a more accurate description of real-world systems. While examples of such dissimilar properties are becoming more abundant – for example regarding diffusion, robustness and competition – the root of such differences remains to be elucidated. Each chapter in this topical collection is self-contained and can be read on its own, thus making it also suitable as reference for experienced researchers wishing to focus on a particular topic.

  11. Interconnection of Distributed Energy Resources

    Energy Technology Data Exchange (ETDEWEB)

    Reiter, Emerson [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2017-04-19

    This is a presentation on interconnection of distributed energy resources, including the relationships between different aspects of interconnection, best practices and lessons learned from different areas of the U.S., and an update on technical advances and standards for interconnection.

  12. Accurate Modeling Method for Cu Interconnect

    Science.gov (United States)

    Yamada, Kenta; Kitahara, Hiroshi; Asai, Yoshihiko; Sakamoto, Hideo; Okada, Norio; Yasuda, Makoto; Oda, Noriaki; Sakurai, Michio; Hiroi, Masayuki; Takewaki, Toshiyuki; Ohnishi, Sadayuki; Iguchi, Manabu; Minda, Hiroyasu; Suzuki, Mieko

    This paper proposes an accurate modeling method of the copper interconnect cross-section in which the width and thickness dependence on layout patterns and density caused by processes (CMP, etching, sputtering, lithography, and so on) are fully, incorporated and universally expressed. In addition, we have developed specific test patterns for the model parameters extraction, and an efficient extraction flow. We have extracted the model parameters for 0.15μm CMOS using this method and confirmed that 10%τpd error normally observed with conventional LPE (Layout Parameters Extraction) was completely dissolved. Moreover, it is verified that the model can be applied to more advanced technologies (90nm, 65nm and 55nm CMOS). Since the interconnect delay variations due to the processes constitute a significant part of what have conventionally been treated as random variations, use of the proposed model could enable one to greatly narrow the guardbands required to guarantee a desired yield, thereby facilitating design closure.

  13. Introduction to organic electronic and optoelectronic materials and devices

    CERN Document Server

    Sun, Sam-Shajing

    2008-01-01

    Introduction to Optoelectronic Materials, N. Peyghambarian and M. Fallahi Introduction to Optoelectronic Device Principles, J. Piprek Basic Electronic Structures and Charge Carrier Generation in Organic Optoelectronic Materials, S.-S. Sun Charge Transport in Conducting Polymers, V.N. Prigodin and A.J. Epstein Major Classes of Organic Small Molecules for Electronic and Optoelectronics, X. Meng, W. Zhu, and H. Tian Major Classes of Conjugated Polymers and Synthetic Strategies, Y. Li and J. Hou Low Energy Gap, Conducting, and Transparent Polymers, A. Kumar, Y. Ner, and G.A. Sotzing Conjugated Polymers, Fullerene C60, and Carbon Nanotubes for Optoelectronic Devices, L. Qu, L. Dai, and S.-S. Sun Introduction of Organic Superconducting Materials, H. Mori Molecular Semiconductors for Organic Field-Effect Transistors, A. Facchetti Polymer Field-Effect Transistors, H.G.O. Sandberg Organic Molecular Light-Emitting Materials and Devices, F. So and J. Shi Polymer Light-Emitting Diodes: Devices and Materials, X. Gong and ...

  14. FABRICATION, MORPHOLOGICAL AND OPTOELECTRONIC ...

    African Journals Online (AJOL)

    2014-12-31

    Dec 31, 2014 ... porous silicon has better optoelectronic properties than bulk .... Measurement: The morphological properties of PS layer such as nanocrystalline size, the .... excess carrier removal by internal recombination and diffusion.

  15. A metallic buried interconnect process for through-wafer interconnection

    International Nuclear Information System (INIS)

    Ji, Chang-Hyeon; Herrault, Florian; Allen, Mark G

    2008-01-01

    In this paper, we present the design, fabrication process and experimental results of electroplated metal interconnects buried at the bottom of deep silicon trenches with vertical sidewalls. A manual spray-coating process along with a unique trench-formation process has been developed for the electroplating of a metal interconnection structure at the bottom surface of the deep trenches. The silicon etch process combines the isotropic dry etch process and conventional Bosch process to fabricate a deep trench with angled top-side edges and vertical sidewalls. The resulting trench structure, in contrast to the trenches fabricated by wet anisotropic etching, enables spray-coated photoresist patterning with good sidewall and top-side edge coverage while maintaining the ability to form a high-density array of deep trenches without excessive widening of the trench opening. A photoresist spray-coating process was developed and optimized for the formation of electroplating mold at the bottom of 300 µm deep trenches having vertical sidewalls. A diluted positive tone photoresist with relatively high solid content and multiple coating with baking between coating steps has been experimentally proven to provide high quality sidewall and edge coverage. To validate the buried interconnect approach, a three-dimensional daisy chain structure having a buried interconnect as the bottom connector and traces on the wafer surface as the top conductor has been designed and fabricated

  16. Report on technological survey in fiscal 1998. Demonstration test for smoothing grid interconnection (Collection of information by surveys in overseas countries); 1998 nendo keito renkei enkatsuka jissho shiken chosa hokokusho. Kaigai chosa ni yoru joho shushu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Surveys were performed on the institutional aspects of establishment and operation of grid interconnection guidelines in the countries advanced in introduction of discrete power supply systems, namely, England, Ireland, Italy and the United States, as well as on the simulation technologies to realize them technically. In England, the power transmission systems (controller: NGO) and the power distribution systems (controller: PES) are separated, to which grid interconnection operating regulations are provided respectively. Single operation of generators connected to the power distribution system is not permitted substantially. In Ireland, the power transmission and distribution functions are separated, but are in the transition stage. Interconnection, if requested, cannot be rejected except for a case that the interconnection is impossible. Italy has the condition similar to that in Ireland, where no small generators are not permitted of independent operation. America has not unified the operating regulations for grid interconnection, and has apprehension in the independent operation, but no countermeasures have been given. In the simulation technologies, surveys were made on PSS/E, EUROSTAG, and SICRE. The PSS/E is the standard software in America for the current and stability analysis. (NEDO)

  17. FDTD technique based crosstalk analysis of bundled SWCNT interconnects

    International Nuclear Information System (INIS)

    Duksh, Yograj Singh; Kaushik, Brajesh Kumar; Agarwal, Rajendra P.

    2015-01-01

    The equivalent electrical circuit model of a bundled single-walled carbon nanotube based distributed RLC interconnects is employed for the crosstalk analysis. The accurate time domain analysis and crosstalk effect in the VLSI interconnect has emerged as an essential design criteria. This paper presents a brief description of the numerical method based finite difference time domain (FDTD) technique that is intended for estimation of voltages and currents on coupled transmission lines. For the FDTD implementation, the stability of the proposed model is strictly restricted by the Courant condition. This method is used for the estimation of crosstalk induced propagation delay and peak voltage in lossy RLC interconnects. Both functional and dynamic crosstalk effects are analyzed in the coupled transmission line. The effect of line resistance on crosstalk induced delay, and peak voltage under dynamic and functional crosstalk is also evaluated. The FDTD analysis and the SPICE simulations are carried out at 32 nm technology node for the global interconnects. It is observed that the analytical results obtained using the FDTD technique are in good agreement with the SPICE simulation results. The crosstalk induced delay, propagation delay, and peak voltage obtained using the FDTD technique shows average errors of 4.9%, 3.4% and 0.46%, respectively, in comparison to SPICE. (paper)

  18. Analysis of the frontier technology of agricultural IoT and its predication research

    Science.gov (United States)

    Han, Shuqing; Zhang, Jianhua; Zhu, Mengshuai; Wu, Jianzhai; Shen, Chen; Kong, Fantao

    2017-09-01

    Agricultural IoT (Internet of Things) develops rapidly. Nanotechnology, biotechnology and optoelectronic technology are successfully integrated into the agricultural sensor technology. Big data, cloud computing and artificial intelligence technology have also been successfully used in IoT. This paper carries out the research on integration of agricultural sensor technology, nanotechnology, biotechnology and optoelectronic technology and the application of big data, cloud computing and artificial intelligence technology in agricultural IoT. The advantages and development of the integration of nanotechnology, biotechnology and optoelectronic technology with agricultural sensor technology were discussed. The application of big data, cloud computing and artificial intelligence technology in IoT and their development trend were analysed.

  19. Benefits of transmission interconnections

    International Nuclear Information System (INIS)

    Lyons, D.

    2006-01-01

    The benefits of new power transmission interconnections from Alberta were discussed with reference to the challenges and measures needed to move forward. Alberta's electricity system has had a long period of sustained growth in generation and demand and this trend is expected to continue. However, no new interconnections have been built since 1985 because the transmission network has not expanded in consequence with the growth in demand. As such, Alberta remains weakly interconnected with the rest of the western region. The benefits of stronger transmission interconnections include improved reliability, long-term generation capability, hydrothermal synergies, a more competitive market, system efficiencies and fuel diversity. It was noted that the more difficult challenges are not technical. Rather, the difficult challenges lie in finding an appropriate business model that recognizes different market structures. It was emphasized that additional interconnections are worthwhile and will require significant collaboration among market participants and governments. It was concluded that interties enable resource optimization between systems and their benefits far exceed their costs. tabs., figs

  20. Analysis of the trade-offs between conventional and superconducting interconnections

    International Nuclear Information System (INIS)

    Frye, R.

    1989-01-01

    Superconductivity can now be achieved at temperatures compatible with semiconductor device operation. This raises the interesting possibility of using the new, high-temperature superconducting ceramics for interconnections in electronic systems. This paper examines some of the consequences of a resistance-free interconnection medium. A problem with conventional conductors in electronic systems is that the resistance of wires increases quadratically as the wire dimensions are scaled down. Below some minimum cross-sectional area, determined by the metal resistivity and wire length, the resistance in these lines begins to severely limit their bandwidth. Superconductors, on the other hand, are not constrained by the same scaling rules. They provide a high bandwidth interconnection at all sizes and lengths. The limitations for superconductors are set by their critical current densities. If line dimensions become too small, a superconductor will no longer support an adequate flow of current. An analysis is presented examining the performance trade-offs for conventional and superconducting interconnections in applications ranging from printed wiring boards to chips. For most semiconductor device-based applications, the potential gains in wiring density offered by superconductors are probably more important than the bandwidth improvements. An important result of the analysis is that it determines the values of critical current density above which superconductors outperform conventional wires in systems of various physical sizes. This identifies particular interconnection technologies for which high-temperature superconductors show the most promise

  1. Fluidic interconnections for microfluidic systems: A new integrated fluidic interconnection allowing plug 'n' play functionality

    DEFF Research Database (Denmark)

    Perozziello, Gerardo; Bundgaard, Frederik; Geschke, Oliver

    2008-01-01

    A crucial challenge in packaging of microsystems is microfluidic interconnections. These have to seal the ports of the system, and have to provide the appropriate interface to other devices or the external environment. Integrated fluidic interconnections appear to be a good solution for interconn...... external metal ferrules and the system. Theoretical calculations are made to dimension and model the integrated fluidic interconnection. Leakage tests are performed on the interconnections, in order to experimentally confirm the model, and detect its limits....

  2. Development of a technology for fabricating low-cost parallel optical interconnects

    Science.gov (United States)

    Van Steenberge, Geert; Hendrickx, Nina; Geerinck, Peter; Bosman, Erwin; Van Put, Steven; Van Daele, Peter

    2006-04-01

    We present a fabrication technology for integrating polymer waveguides and 45° micromirror couplers into standard electrical printed circuit boards (PCBs). The most critical point that is being addressed is the low-cost manufacturing and the compatibility with current PCB production. The latter refers to the processes as well as material compatibility. In the fist part the waveguide fabrication technology is discussed, both photo lithography and laser ablation are proposed. It is shown that a frequency tripled Nd-YAG laser (355 nm) offers a lot of potential for defining single mode interconnections. Emphasis is on multimode waveguides, defined by KrF excimer laser (248 nm) ablation using acrylate polymers. The first conclusion out of loss spectrum measurements is a 'yellowing effect' of laser ablated waveguides, leading to an increased loss at shorter wavelengths. The second important conclusion is a potential low loss at a wavelength of 850 nm, 980 nm and 1310 nm. This is verified at 850 nm by cut-back measurements on 10-cm-long waveguides showing an average propagation loss of 0.13 dB/cm. Photo lithographically defined waveguides using inorganic-organic hybrid polymers show an attenuation loss of 0.15 dB/cm at 850 nm. The generation of debris and the presence of microstructures are two main concerns for KrF excimer laser ablation of hybrid polymers. In the second part a process for embedding metal coated 45° micromirrors in optical waveguiding layers is described. Mirrors are selectively metallized using a lift-off process. Filling up the angled via without the presence of air bubbles and providing a flat surface above the mirror is only possible by enhancing the cladding deposition process with ultrasound agitation. Initial loss measurements indicate an excess mirror loss of 1.5 dB.

  3. Chip-Level Electromigration Reliability for Cu Interconnects

    International Nuclear Information System (INIS)

    Gall, M.; Oh, C.; Grinshpon, A.; Zolotov, V.; Panda, R.; Demircan, E.; Mueller, J.; Justison, P.; Ramakrishna, K.; Thrasher, S.; Hernandez, R.; Herrick, M.; Fox, R.; Boeck, B.; Kawasaki, H.; Haznedar, H.; Ku, P.

    2004-01-01

    Even after the successful introduction of Cu-based metallization, the electromigration (EM) failure risk has remained one of the most important reliability concerns for most advanced process technologies. Ever increasing operating current densities and the introduction of low-k materials in the backend process scheme are some of the issues that threaten reliable, long-term operation at elevated temperatures. The traditional method of verifying EM reliability only through current density limit checks is proving to be inadequate in general, or quite expensive at the best. A Statistical EM Budgeting (SEB) methodology has been proposed to assess more realistic chip-level EM reliability from the complex statistical distribution of currents in a chip. To be valuable, this approach requires accurate estimation of currents for all interconnect segments in a chip. However, no efficient technique to manage the complexity of such a task for very large chip designs is known. We present an efficient method to estimate currents exhaustively for all interconnects in a chip. The proposed method uses pre-characterization of cells and macros, and steps to identify and filter out symmetrically bi-directional interconnects. We illustrate the strength of the proposed approach using a high-performance microprocessor design for embedded applications as a case study

  4. In-memory interconnect protocol configuration registers

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Kevin Y.; Roberts, David A.

    2017-09-19

    Systems, apparatuses, and methods for moving the interconnect protocol configuration registers into the main memory space of a node. The region of memory used for storing the interconnect protocol configuration registers may also be made cacheable to reduce the latency of accesses to the interconnect protocol configuration registers. Interconnect protocol configuration registers which are used during a startup routine may be prefetched into the host's cache to make the startup routine more efficient. The interconnect protocol configuration registers for various interconnect protocols may include one or more of device capability tables, memory-side statistics (e.g., to support two-level memory data mapping decisions), advanced memory and interconnect features such as repair resources and routing tables, prefetching hints, error correcting code (ECC) bits, lists of device capabilities, set and store base address, capability, device ID, status, configuration, capabilities, and other settings.

  5. In-memory interconnect protocol configuration registers

    Science.gov (United States)

    Cheng, Kevin Y.; Roberts, David A.

    2017-09-19

    Systems, apparatuses, and methods for moving the interconnect protocol configuration registers into the main memory space of a node. The region of memory used for storing the interconnect protocol configuration registers may also be made cacheable to reduce the latency of accesses to the interconnect protocol configuration registers. Interconnect protocol configuration registers which are used during a startup routine may be prefetched into the host's cache to make the startup routine more efficient. The interconnect protocol configuration registers for various interconnect protocols may include one or more of device capability tables, memory-side statistics (e.g., to support two-level memory data mapping decisions), advanced memory and interconnect features such as repair resources and routing tables, prefetching hints, error correcting code (ECC) bits, lists of device capabilities, set and store base address, capability, device ID, status, configuration, capabilities, and other settings.

  6. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Shriniwas, E-mail: sniwas89@gmail.com; Kaur, Inderpreet, E-mail: inderpreety@yahoo.co.in [Academy of Scientific and Innovative Research- Central Scientific Instruments Organisation (AcSIR-CSIO), Sector-30C, Chandigarh (India); Council of Scientific and Industrial Research- Central Scientific Instruments Organisation (CSIR-CSIO), Sector-30C, Chandigarh (India)

    2016-04-13

    Graphene, an atom–thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σ{sub dc}/σ{sub opt}) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  7. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    Science.gov (United States)

    Yadav, Shriniwas; Kaur, Inderpreet

    2016-04-01

    Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  8. Production and characterisation of SLID interconnected n-in-p pixel modules with 75 μm thin silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Andricek, L. [Halbleiterlabor der Max-Planck-Gesellschaft, Otto Hahn Ring 6, D-81739 München (Germany); Beimforde, M.; Macchiolo, A.; Moser, H.-G. [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany); Nisius, R., E-mail: Richard.Nisius@mpp.mpg.de [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany); Richter, R.H. [Halbleiterlabor der Max-Planck-Gesellschaft, Otto Hahn Ring 6, D-81739 München (Germany); Terzo, S.; Weigell, P. [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany)

    2014-09-11

    The performance of pixel modules built from 75 μm thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 μm thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of 10{sup 16}n{sub eq}/cm{sup 2}.

  9. Metal Complexes for Organic Optoelectronic Applications

    Science.gov (United States)

    Huang, Liang

    Organic optoelectronic devices have drawn extensive attention by over the past two decades. Two major applications for Organic optoelectronic devices are efficient organic photovoltaic devices(OPV) and organic light emitting diodes (OLED). Organic Solar cell has been proven to be compatible with the low cost, large area bulk processing technology and processed high absorption efficiencies compared to inorganic solar cells. Organic light emitting diodes are a promising approach for display and solid state lighting applications. To improve the efficiency, stability, and materials variety for organic optoelectronic devices, several emissive materials, absorber-type materials, and charge transporting materials were developed and employed in various device settings. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. In this thesis, Chapter 1 provides an introduction to the background knowledge of OPV and OLED research fields presented. Chapter 2 discusses new porphyrin derivatives- azatetrabenzylporphyrins for OPV and near infrared OLED applications. A modified synthetic method is utilized to increase the reaction yield of the azatetrabenzylporphyrin materials and their photophysical properties, electrochemical properties are studied. OPV devices are also fabricated using Zinc azatetrabenzylporphyrin as donor materials. Pt(II) azatetrabenzylporphyrin were also synthesized and used in near infra-red OLED to achieve an emission over 800 nm with reasonable external quantum efficiencies. Chapter 3, discusses the synthesis, characterization, and device evaluation of a series of tetradentate platinum and palladium complexesfor single doped white OLED applications and RGB white OLED applications. Devices employing some of the developed emitters demonstrated impressively high external quantum efficiencies within the range of 22%-27% for various emitter concentrations. And the palladium complex, i

  10. Electroactive and Optoelectronically Active Graphene Nanofilms

    DEFF Research Database (Denmark)

    Chi, Qijin

    As an atomic-scale-thick two-dimensional material, graphene has emerged as one of the most miracle materials and has generated intensive interest in physics, chemistry and even biology in the last decade [1, 2]. Nanoscale engineering and functionalization of graphene is a crucial step for many...... applications ranging from catalysis, electronic devices, sensors to advanced energy conversion and storage [3]. This talk highlights our recent studies on electroactive and optoelectronically active graphene ultrathin films for chemical sensors and energy technology. The presentation includes a general theme...... for functionalization of graphene nanosheets, followed by showing several case studies. Our systems cover redox-active nanoparticles, electroactive supramolecular ensembles and redox enzymes which are integrated with graphene nanosheets as building blocks for the construction of functional thin films or graphene papers....

  11. FY 2000 report on the results of the R and D of femtosecond technology. Development of the ultra-short pulse optoelectronic technology; 2000 nendo femto byo technology no kenkyu kaihatsu seika hokokusho. Chotan pulse hikari electronics gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    This project aims at creating new industrial basement technology which supports the highly information-oriented society in the 21st century, conducts the R and D of technology to control the state of light and electron in the femtosecond time domain (10{sup -15} - 10{sup -12} sec), and establishes the basement technology which exceeds the speed limit of the conventional electronics technology and also includes new functionality. Especially, it aims at establishing the basement technology of the ultra-high speed optoelectronics which are absolutely necessary for construction of the Tb/s class ultra-high speed/large capacity information communication infrastructure. The results obtained in this fiscal year were as follows: successful transmission of 144km of 600fs optical pulse, successful experiment of 4-chain pulse DEMUX equivalent to 1Tb/s by ultra-high speed intersubband transition optical switch of Sb-base material combination quantum well, realization of 2-bit coding/decoding in the spectral region, realization of serial-parallel conversion motion of optical pulse equivalent to 1Tb/s using squarylium J aggregate thin films, realization of subpico second optical pulse 20nm wavelength conversion by DFB laser structure, etc. (NEDO)

  12. Terahertz optoelectronics in graphene

    International Nuclear Information System (INIS)

    Otsuji, Taiichi

    2016-01-01

    Graphene has attracted considerable attention due to its extraordinary carrier transport, optoelectronic, and plasmonic properties originated from its gapless and linear energy spectra enabling various functionalities with extremely high quantum efficiencies that could never be obtained in any existing materials. This paper reviews recent advances in graphene optoelectronics particularly focused on the physics and device functionalities in the terahertz (THz) electromagnetic spectral range. Optical response of graphene is characterized by its optical conductivity and nonequilibrium carrier energy relaxation dynamics, enabling amplification of THz radiation when it is optically or electrically pumped. Current-injection THz lasing has been realized very recently. Graphene plasmon polaritons can greatly enhance the THz light and graphene matter interaction, enabling giant enhancement in detector responsivity as well as amplifier/laser gain. Graphene-based van der Waals heterostructures could give more interesting and energy-efficient functionalities. (author)

  13. Insulating materials for optoelectronics

    International Nuclear Information System (INIS)

    Agullo-Lopez, F.

    1990-01-01

    Optoelectronics is an interdisciplinary field. Basic functions of an optoelectronic system include the generator of the optical signal, its transmission and handling and, finally, its detection, storage and display. A large variety of semiconductor and insulating materials are used or are being considered to perform those functions. The authors focus on insulating materials, mostly oxides. For signal generation, tunable solid state lasers, either vibronic or those based oon colour centres are briefly described, and their main operating parameters summarized. Reference is made to some developments on fiber and waveguide lasers. Relevant physical features of the silica fibres used for low-loss, long-band, optical transmission are reviewed, as well as present efforts to further reduce attenuation in the mid-infrared range. Particular attention is paid to photorefractive materials (LiNbO 3 , BGO, BSO, etc.), which are being investigated

  14. Architecture-Level Exploration of Alternative Interconnection Schemes Targeting 3D FPGAs: A Software-Supported Methodology

    Directory of Open Access Journals (Sweden)

    Kostas Siozios

    2008-01-01

    Full Text Available In current reconfigurable architectures, the interconnection structures increasingly contribute more to the delay and power consumption. The demand for increased clock frequencies and logic density (smaller area footprint makes the problem even more important. Three-dimensional (3D architectures are able to alleviate this problem by accommodating a number of functional layers, each of which might be fabricated in different technology. However, the benefits of such integration technology have not been sufficiently explored yet. In this paper, we propose a software-supported methodology for exploring and evaluating alternative interconnection schemes for 3D FPGAs. In order to support the proposed methodology, three new CAD tools were developed (part of the 3D MEANDER Design Framework. During our exploration, we study the impact of vertical interconnection between functional layers in a number of design parameters. More specifically, the average gains in operation frequency, power consumption, and wirelength are 35%, 32%, and 13%, respectively, compared to existing 2D FPGAs with identical logic resources. Also, we achieve higher utilization ratio for the vertical interconnections compared to existing approaches by 8% for designing 3D FPGAs, leading to cheaper and more reliable devices.

  15. Optical transceiver ICs based on 3D die-stacking of opto-electronic devices

    NARCIS (Netherlands)

    Duan, P.; Raz, O.; Smalbrugge, B.E.; Plassche, van de K.L.; Dorren, H.J.S.

    2013-01-01

    Wafer scale fabrication of the 3D stacked transceivers is discussed. Uniform open eye patterns at 10 Gb/s/channel of both 3D stacked transmitter and receiver ICs indicates that the interconnection technology is robust.

  16. High-speed VCSEL-based optical interconnects

    Science.gov (United States)

    Ishak, Waguih S.

    2001-11-01

    Vertical Cavity Surface Emitting Lasers (VCSEL) have made significant inroads into commercial realization especially in the area of data communications. Single VCSEL devices are key components in Gb Ethernet Transceivers. A multi-element VCSEL array is the key enabling technology for high-speed multi Gb/s parallel optical interconnect modules. In 1996, several companies introduced a new generation of fiber optic products based VCSEL technology such as multimode fiber transceivers for the ANSI Fiber Channel and Gigabit Ethernet IEEE 802.3 standards. VCSELs offer unique advantages over its edge-emitting counterparts in several areas. These include low-cost (LED-like) manufacturability, low current operation and array integrability. As data rates continue to increase, VCSELs offer the advantage of being able to provide the highest modulation bandwidth per milliamp of modulation current. Currently, most of the VCSEL-based products use short (780 - 980 nm) wavelength lasers. However, significant research efforts are taking place at universities and industrial research labs around the world to develop reliable, manufacturable and high-power long (1300 - 1550 nm) wavelength VCSELs. These lasers will allow longer (several km) transmission distances and will help alleviate some of the eye-safety issues. Perhaps, the most important advantage of VCSELs is the ability to form two-dimensional arrays much easier than in the case of edge-emitting lasers. These arrays (single and two-dimensional) will allow a whole new family of applications, specifically in very high-speed computer and switch interconnects.

  17. Optoelectronic properties of four azobenzene-based iminopyridine ligands for photovoltaic application

    Directory of Open Access Journals (Sweden)

    Aziz El alamy

    2017-11-01

    Full Text Available Because of organic π-conjugated materials’ optoelectronic properties and potential applications in a wide range of electronic and optoelectronic devices, such as organic solar cells, these materials, including both polymers and oligomers, have been widely studied in recent years. This work reposts a theoretical study using the DFT method on four azobenzene-based iminopyridines. The theoretical ground-state geometry, electronic structure and optoelectronic parameters (highest occupied molecular orbital (HOMO, lowest unoccupied molecular orbital (LUMO energy levels, open-circuit voltage (Voc and oscillator strengths (O.S of the studied molecules were obtained using the density functional theory (DFT and time-dependent (TDDFT approaches. The effects of the structure length and substituents on the geometric and optoelectronic properties of these materials are discussed to investigate the relationship between the molecular structure and the optoelectronic properties. The results of this study are consistent with the experimental ones and suggest that these materials as good candidates for use in photovoltaic devices. Keywords: π-conjugated materials, azobenzene, optoelectronic properties, DFT calculations, HOMO-LUMO gap

  18. ``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon

    Science.gov (United States)

    Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant

    2014-03-01

    Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.

  19. Low energy routing platforms for optical interconnects using active plasmonics integrated with Silicon Photonics

    DEFF Research Database (Denmark)

    Vyrsokinos, K.; Papaioannou, S.; Kalavrouziotis, D.

    2013-01-01

    technologies to cope with the massive amount of data moving across all hierarchical communication levels, namely rack-to-rack, backplane, chip-to-chip and even on-chip interconnections. Plasmonics comes indeed as a disruptive technology that enables seamless interoperability between light beams and electronic...

  20. Mid-infrared Semiconductor Optoelectronics

    CERN Document Server

    Krier, Anthony

    2006-01-01

    The practical realisation of optoelectronic devices operating in the 2–10 µm (mid-infrared) wavelength range offers potential applications in a variety of areas from environmental gas monitoring around oil rigs and landfill sites to the detection of pharmaceuticals, particularly narcotics. In addition, an atmospheric transmission window exists between 3 µm and 5 µm that enables free-space optical communications, thermal imaging applications and the development of infrared measures for "homeland security". Consequently, the mid-infrared is very attractive for the development of sensitive optical sensor instrumentation. Unfortunately, the nature of the likely applications dictates stringent requirements in terms of laser operation, miniaturisation and cost that are difficult to meet. Many of the necessary improvements are linked to a better ability to fabricate and to understand the optoelectronic properties of suitable high-quality epitaxial materials and device structures. Substantial progress in these m...

  1. Multi-net optimization of VLSI interconnect

    CERN Document Server

    Moiseev, Konstantin; Wimer, Shmuel

    2015-01-01

    This book covers layout design and layout migration methodologies for optimizing multi-net wire structures in advanced VLSI interconnects. Scaling-dependent models for interconnect power, interconnect delay and crosstalk noise are covered in depth, and several design optimization problems are addressed, such as minimization of interconnect power under delay constraints, or design for minimal delay in wire bundles within a given routing area. A handy reference or a guide for design methodologies and layout automation techniques, this book provides a foundation for physical design challenges of interconnect in advanced integrated circuits.  • Describes the evolution of interconnect scaling and provides new techniques for layout migration and optimization, focusing on multi-net optimization; • Presents research results that provide a level of design optimization which does not exist in commercially-available design automation software tools; • Includes mathematical properties and conditions for optimal...

  2. Time analysis of interconnection network implemented on the honeycomb architecture

    Energy Technology Data Exchange (ETDEWEB)

    Milutinovic, D [Inst. Michael Pupin, Belgrade (Yugoslavia)

    1996-12-31

    Problems of time domains analysis of the mapping of interconnection networks for parallel processing on one form of uniform massively parallel architecture of the cellular type are considered. The results of time analysis are discussed. It is found that changing the technology results in changing the mapping rules. 17 refs.

  3. Multilevel Dual Damascene copper interconnections

    Science.gov (United States)

    Lakshminarayanan, S.

    Copper has been acknowledged as the interconnect material for future generations of ICs to overcome the bottlenecks on speed and reliability present with the current Al based wiring. A new set of challenges brought to the forefront when copper replaces aluminum, have to be met and resolved to make it a viable option. Unit step processes related to copper technology have been under development for the last few years. In this work, the application of copper as the interconnect material in multilevel structures with SiO2 as the interlevel dielectric has been explored, with emphasis on integration issues and complete process realization. Interconnect definition was achieved by the Dual Damascene approach using chemical mechanical polishing of oxide and copper. The choice of materials used as adhesion promoter/diffusion barrier included Ti, Ta and CVD TiN. Two different polish chemistries (NH4OH or HNO3 based) were used to form the interconnects. The diffusion barrier was removed during polishing (in the case of TiN) or by a post CMP etch (as with Ti or Ta). Copper surface passivation was performed using boron implantation and PECVD nitride encapsulation. The interlevel dielectric way composed of a multilayer stack of PECVD SiO2 and SixNy. A baseline process sequence which ensured the mechanical and thermal compatibility of the different unit steps was first created. A comprehensive test vehicle was designed and test structures were fabricated using the process flow developed. Suitable modifications were subsequently introduced in the sequence as and when processing problems were encountered. Electrical characterization was performed on the fabricated devices, interconnects, contacts and vias. The structures were subjected to thermal stressing to assess their stability and performance. The measurement of interconnect sheet resistances revealed lower copper loss due to dishing on samples polished using HNO3 based slurry. Interconnect resistances remained stable upto 400o

  4. 18 CFR 292.306 - Interconnection costs.

    Science.gov (United States)

    2010-04-01

    ... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Interconnection costs... § 292.306 Interconnection costs. (a) Obligation to pay. Each qualifying facility shall be obligated to pay any interconnection costs which the State regulatory authority (with respect to any electric...

  5. Decentralised output feedback control of Markovian jump interconnected systems with unknown interconnections

    Science.gov (United States)

    Li, Li-Wei; Yang, Guang-Hong

    2017-07-01

    The problem of decentralised output feedback control is addressed for Markovian jump interconnected systems with unknown interconnections and general transition rates (TRs) allowed to be unknown or known with uncertainties. A class of decentralised dynamic output feedback controllers are constructed, and a cyclic-small-gain condition is exploited to dispose the unknown interconnections so that the resultant closed-loop system is stochastically stable and satisfies an H∞ performance. With slack matrices to cope with the nonlinearities incurred by unknown and uncertain TRs in control synthesis, a novel controller design condition is developed in linear matrix inequality formalism. Compared with the existing works, the proposed approach leads to less conservatism. Finally, two examples are used to illustrate the effectiveness of the new results.

  6. Incorporation of in-plane interconnects to reflow bonding for electrical functionality

    International Nuclear Information System (INIS)

    Moğulkoç, B; Jansen, H V; Ter Brake, H J M; Elwenspoek, M C

    2011-01-01

    Incorporation of in-plane electrical interconnects to reflow bonding is studied to provide electrical functionality to lab-on-a-chip or microfluidic devices. Reflow bonding is the packaging technology, in which glass tubes are joined to silicon substrates at elevated temperatures. The tubes are used to interface the silicon-based fluidic devices and are directly compatible with standard Swagelok® connectors. After the bonding, the electrically conductive lines will allow probing into the volume confined by the tube, where the fluidic device operates. Therefore methods for fabricating electrical interconnects that survive the bonding procedure at elevated temperature and do not alter the properties of the bond interface are investigated

  7. Integrated Optoelectronic Networks for Application-Driven Multicore Computing

    Science.gov (United States)

    2017-05-08

    AFRL-AFOSR-VA-TR-2017-0102 Integrated Optoelectronic Networks for Application- Driven Multicore Computing Sudeep Pasricha COLORADO STATE UNIVERSITY...AND SUBTITLE Integrated Optoelectronic Networks for Application-Driven Multicore Computing 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-13-1-0110 5c...and supportive materials with innovative architectural designs that integrate these components according to system-wide application needs. 15

  8. Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

    Directory of Open Access Journals (Sweden)

    Bing Huang

    2014-05-01

    Full Text Available Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double-sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

  9. Fuel cell system with interconnect

    Science.gov (United States)

    Goettler, Richard; Liu, Zhien

    2017-12-12

    The present invention includes a fuel cell system having a plurality of adjacent electrochemical cells formed of an anode layer, a cathode layer spaced apart from the anode layer, and an electrolyte layer disposed between the anode layer and the cathode layer. The fuel cell system also includes at least one interconnect, the interconnect being structured to conduct free electrons between adjacent electrochemical cells. Each interconnect includes a primary conductor embedded within the electrolyte layer and structured to conduct the free electrons.

  10. Exploration on the training mode of application-oriented talents majoring in optoelectronic information

    Science.gov (United States)

    Lv, Hao; Liu, Aimei; Zhang, Shengyi; Xiao, Yongjun

    2017-08-01

    The optoelectronic information major is a strong theoretical and practical specialty. In view of the problems existing in the application-oriented talents training in the optoelectronic information specialty. Five aspects of the talent cultivation plan, the teaching staff, the teaching content, the practical teaching and the scientific research on the training mode of application-oriented talents majoring in optoelectronic information are putted forward. It is beneficial to the specialty construction of optoelectronic information industry which become close to the development of enterprises, and the depth of the integration of school and enterprise service regional economic optoelectronic information high-end skilled personnel base.

  11. Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2⋅10 15 $n_{eq}$ /cm 2

    CERN Document Server

    Weigell, P; Beimforde, M; Macchiolo, A; Moser, H G; Nisius, R; Richter, R H

    2011-01-01

    A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to 2⋅10 15 \\,\

  12. Printed polymer photonic devices for optical interconnect systems

    Science.gov (United States)

    Subbaraman, Harish; Pan, Zeyu; Zhang, Cheng; Li, Qiaochu; Guo, L. J.; Chen, Ray T.

    2016-03-01

    Polymer photonic device fabrication usually relies on the utilization of clean-room processes, including photolithography, e-beam lithography, reactive ion etching (RIE) and lift-off methods etc, which are expensive and are limited to areas as large as a wafer. Utilizing a novel and a scalable printing process involving ink-jet printing and imprinting, we have fabricated polymer based photonic interconnect components, such as electro-optic polymer based modulators and ring resonator switches, and thermo-optic polymer switch based delay networks and demonstrated their operation. Specifically, a modulator operating at 15MHz and a 2-bit delay network providing up to 35.4ps are presented. In this paper, we also discuss the manufacturing challenges that need to be overcome in order to make roll-to-roll manufacturing practically viable. We discuss a few manufacturing challenges, such as inspection and quality control, registration, and web control, that need to be overcome in order to realize true implementation of roll-to-roll manufacturing of flexible polymer photonic systems. We have overcome these challenges, and currently utilizing our inhouse developed hardware and software tools, <10μm alignment accuracy at a 5m/min is demonstrated. Such a scalable roll-to-roll manufacturing scheme will enable the development of unique optoelectronic devices which can be used in a myriad of different applications, including communication, sensing, medicine, security, imaging, energy, lighting etc.

  13. Nanoantenna couplers for metal-insulator-metal waveguide interconnects

    Science.gov (United States)

    Onbasli, M. Cengiz; Okyay, Ali K.

    2010-08-01

    State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times.

  14. Lyapunov-based Stability of Feedback Interconnections of Negative Imaginary Systems

    KAUST Repository

    Ghallab, Ahmed G.

    2017-10-19

    Feedback control systems using sensors and actuators such as piezoelectric sensors and actuators, micro-electro-mechanical systems (MEMS) sensors and opto-mechanical sensors, are allowing new advances in designing such high precision technologies. The negative imaginary control systems framework allows for robust control design for such high precision systems in the face of uncertainties due to unmodelled dynamics. The stability of the feedback interconnection of negative imaginary systems has been well established in the literature. However, the proofs of stability feedback interconnection which are used in some previous papers have a shortcoming due to a matrix inevitability issue. In this paper, we provide a new and correct Lyapunov-based proof of one such result and show that the result is still true.

  15. Lyapunov-based Stability of Feedback Interconnections of Negative Imaginary Systems

    KAUST Repository

    Ghallab, Ahmed G.; Mabrok, Mohamed; Petersen, Ian R.

    2017-01-01

    Feedback control systems using sensors and actuators such as piezoelectric sensors and actuators, micro-electro-mechanical systems (MEMS) sensors and opto-mechanical sensors, are allowing new advances in designing such high precision technologies. The negative imaginary control systems framework allows for robust control design for such high precision systems in the face of uncertainties due to unmodelled dynamics. The stability of the feedback interconnection of negative imaginary systems has been well established in the literature. However, the proofs of stability feedback interconnection which are used in some previous papers have a shortcoming due to a matrix inevitability issue. In this paper, we provide a new and correct Lyapunov-based proof of one such result and show that the result is still true.

  16. Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Bingqi Sun

    2018-06-01

    Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

  17. A proposed holistic approach to on-chip, off-chip, test, and package interconnections

    Science.gov (United States)

    Bartelink, Dirk J.

    1998-11-01

    The term interconnection has traditionally implied a `robust' connection from a transistor or a group of transistors in an IC to the outside world, usually a PC board. Optimum system utilization is done from outside the IC. As an alternative, this paper addresses `unimpeded' transistor-to-transistor interconnection aimed at reaching the high circuit densities and computational capabilities of neighboring IC's. In this view, interconnections are not made to some human-centric place outside the IC world requiring robustness—except for system input and output connections. This unimpeded interconnect style is currently available only through intra-chip signal traces in `system-on-a-chip' implementations, as exemplified by embedded DRAMs. Because the traditional off-chip penalty in performance and wiring density is so large, a merging of complex process technologies is the only option today. It is suggested that, for system integration to move forward, the traditional robustness requirement inherited from conventional packaging interconnect and IC manufacturing test must be discarded. Traditional system assembly from vendor parts requires robustness under shipping, inspection and assembly. The trend toward systems on a chip signifies willingness by semiconductor companies to design and fabricate whole systems in house, so that `in-house' chip-to-chip assembly is not beyond reach. In this scenario, bare chips never leave the controlled environment of the IC fabricator while the two major contributors to off-chip signal penalty, ESD protection and the need to source a 50-ohm test head, are avoided. With in-house assembly, ESD protection can be eliminated with the precautions already familiar in plasma etching. Test interconnection impacts the fundamentals of IC manufacturing, particularly with clock speeds approaching 1GHz, and cannot be an afterthought. It should be an integral part of the chip-to-chip interconnection bandwidth optimization, because—as we must

  18. Deformable paper origami optoelectronic devices

    KAUST Repository

    He, Jr-Hau; Lin, Chun-Ho

    2017-01-01

    Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a

  19. Fiber bundle probes for interconnecting miniaturized medical imaging devices

    Science.gov (United States)

    Zamora, Vanessa; Hofmann, Jens; Marx, Sebastian; Herter, Jonas; Nguyen, Dennis; Arndt-Staufenbiel, Norbert; Schröder, Henning

    2017-02-01

    Miniaturization of medical imaging devices will significantly improve the workflow of physicians in hospitals. Photonic integrated circuit (PIC) technologies offer a high level of miniaturization. However, they need fiber optic interconnection solutions for their functional integration. As part of European funded project (InSPECT) we investigate fiber bundle probes (FBPs) to be used as multi-mode (MM) to single-mode (SM) interconnections for PIC modules. The FBP consists of a set of four or seven SM fibers hexagonally distributed and assembled into a holder that defines a multicore connection. Such a connection can be used to connect MM fibers, while each SM fiber is attached to the PIC module. The manufacturing of these probes is explored by using well-established fiber fusion, epoxy adhesive, innovative adhesive and polishing techniques in order to achieve reliable, low-cost and reproducible samples. An innovative hydrofluoric acid-free fiber etching technology has been recently investigated. The preliminary results show that the reduction of the fiber diameter shows a linear behavior as a function of etching time. Different etch rate values from 0.55 μm/min to 2.3 μm/min were found. Several FBPs with three different type of fibers have been optically interrogated at wavelengths of 630nm and 1550nm. Optical losses are found of approx. 35dB at 1550nm for FBPs composed by 80μm fibers. Although FBPs present moderate optical losses, they might be integrated using different optical fibers, covering a broad spectral range required for imaging applications. Finally, we show the use of FBPs as promising MM-to-SM interconnects for real-world interfacing to PIC's.

  20. Towards energy aware optical networks and interconnects

    Science.gov (United States)

    Glesk, Ivan; Osadola, Tolulope; Idris, Siti

    2013-10-01

    In a today's world, information technology has been identified as one of the major factors driving economic prosperity. Datacenters businesses have been growing significantly in the past few years. The equipments in these datacenters need to be efficiently connected to each other and also to the outside world in order to enable effective exchange of information. This is why there is need for highly scalable, energy savvy and reliable network connectivity infrastructure that is capable of accommodating the large volume of data being exchanged at any time within the datacenter network and the outside network in general. These devices that can ensure such effective connectivity currently require large amount of energy in order to meet up with these increasing demands. In this paper, an overview of works being done towards realizing energy aware optical networks and interconnects for datacenters is presented. Also an OCDMA approach is discussed as potential multiple access technique for future optical network interconnections. We also presented some challenges that might inhibit effective implementation of the OCDMA multiplexing scheme.

  1. Epidemics spreading in interconnected complex networks

    International Nuclear Information System (INIS)

    Wang, Y.; Xiao, G.

    2012-01-01

    We study epidemic spreading in two interconnected complex networks. It is found that in our model the epidemic threshold of the interconnected network is always lower than that in any of the two component networks. Detailed theoretical analysis is proposed which allows quick and accurate calculations of epidemic threshold and average outbreak/epidemic size. Theoretical analysis and simulation results show that, generally speaking, the epidemic size is not significantly affected by the inter-network correlation. In interdependent networks which can be viewed as a special case of interconnected networks, however, impacts of inter-network correlation on the epidemic threshold and outbreak size are more significant. -- Highlights: ► We study epidemic spreading in two interconnected complex networks. ► The epidemic threshold is lower than that in any of the two networks. And Interconnection correlation has impacts on threshold and average outbreak size. ► Detailed theoretical analysis is proposed which allows quick and accurate calculations of epidemic threshold and average outbreak/epidemic size. ► We demonstrated and proved that Interconnection correlation does not affect epidemic size significantly. ► In interdependent networks, impacts of inter-network correlation on the epidemic threshold and outbreak size are more significant.

  2. Epidemics spreading in interconnected complex networks

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of High Performance Computing, Agency for Science, Technology and Research (A-STAR), Singapore 138632 (Singapore); Xiao, G., E-mail: egxxiao@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2012-09-03

    We study epidemic spreading in two interconnected complex networks. It is found that in our model the epidemic threshold of the interconnected network is always lower than that in any of the two component networks. Detailed theoretical analysis is proposed which allows quick and accurate calculations of epidemic threshold and average outbreak/epidemic size. Theoretical analysis and simulation results show that, generally speaking, the epidemic size is not significantly affected by the inter-network correlation. In interdependent networks which can be viewed as a special case of interconnected networks, however, impacts of inter-network correlation on the epidemic threshold and outbreak size are more significant. -- Highlights: ► We study epidemic spreading in two interconnected complex networks. ► The epidemic threshold is lower than that in any of the two networks. And Interconnection correlation has impacts on threshold and average outbreak size. ► Detailed theoretical analysis is proposed which allows quick and accurate calculations of epidemic threshold and average outbreak/epidemic size. ► We demonstrated and proved that Interconnection correlation does not affect epidemic size significantly. ► In interdependent networks, impacts of inter-network correlation on the epidemic threshold and outbreak size are more significant.

  3. Integrated optoelectronic oscillator.

    Science.gov (United States)

    Tang, Jian; Hao, Tengfei; Li, Wei; Domenech, David; Baños, Rocio; Muñoz, Pascual; Zhu, Ninghua; Capmany, José; Li, Ming

    2018-04-30

    With the rapid development of the modern communication systems, radar and wireless services, microwave signal with high-frequency, high-spectral-purity and frequency tunability as well as microwave generator with light weight, compact size, power-efficient and low cost are increasingly demanded. Integrated microwave photonics (IMWP) is regarded as a prospective way to meet these demands by hybridizing the microwave circuits and the photonics circuits on chip. In this article, we propose and experimentally demonstrate an integrated optoelectronic oscillator (IOEO). All of the devices needed in the optoelectronic oscillation loop circuit are monolithically integrated on chip within size of 5×6cm 2 . By tuning the injection current to 44 mA, the output frequency of the proposed IOEO is located at 7.30 GHz with phase noise value of -91 dBc/Hz@1MHz. When the injection current is increased to 65 mA, the output frequency can be changed to 8.87 GHz with phase noise value of -92 dBc/Hz@1MHz. Both of the oscillation frequency can be slightly tuned within 20 MHz around the center oscillation frequency by tuning the injection current. The method about improving the performance of IOEO is carefully discussed at the end of in this article.

  4. Parallel optoelectronic trinary signed-digit division

    Science.gov (United States)

    Alam, Mohammad S.

    1999-03-01

    The trinary signed-digit (TSD) number system has been found to be very useful for parallel addition and subtraction of any arbitrary length operands in constant time. Using the TSD addition and multiplication modules as the basic building blocks, we develop an efficient algorithm for performing parallel TSD division in constant time. The proposed division technique uses one TSD subtraction and two TSD multiplication steps. An optoelectronic correlator based architecture is suggested for implementation of the proposed TSD division algorithm, which fully exploits the parallelism and high processing speed of optics. An efficient spatial encoding scheme is used to ensure better utilization of space bandwidth product of the spatial light modulators used in the optoelectronic implementation.

  5. Message Passing Framework for Globally Interconnected Clusters

    International Nuclear Information System (INIS)

    Hafeez, M; Riaz, N; Asghar, S; Malik, U A; Rehman, A

    2011-01-01

    In prevailing technology trends it is apparent that the network requirements and technologies will advance in future. Therefore the need of High Performance Computing (HPC) based implementation for interconnecting clusters is comprehensible for scalability of clusters. Grid computing provides global infrastructure of interconnecting clusters consisting of dispersed computing resources over Internet. On the other hand the leading model for HPC programming is Message Passing Interface (MPI). As compared to Grid computing, MPI is better suited for solving most of the complex computational problems. MPI itself is restricted to a single cluster. It does not support message passing over the internet to use the computing resources of different clusters in an optimal way. We propose a model that provides message passing capabilities between parallel applications over the internet. The proposed model is based on Architecture for Java Universal Message Passing (A-JUMP) framework and Enterprise Service Bus (ESB) named as High Performance Computing Bus. The HPC Bus is built using ActiveMQ. HPC Bus is responsible for communication and message passing in an asynchronous manner. Asynchronous mode of communication offers an assurance for message delivery as well as a fault tolerance mechanism for message passing. The idea presented in this paper effectively utilizes wide-area intercluster networks. It also provides scheduling, dynamic resource discovery and allocation, and sub-clustering of resources for different jobs. Performance analysis and comparison study of the proposed framework with P2P-MPI are also presented in this paper.

  6. Comprehensive evaluation of global energy interconnection development index

    Science.gov (United States)

    Liu, Lin; Zhang, Yi

    2018-04-01

    Under the background of building global energy interconnection and realizing green and low-carbon development, this article constructed the global energy interconnection development index system which based on the current situation of global energy interconnection development. Through using the entropy method for the weight analysis of global energy interconnection development index, and then using gray correlation method to analyze the selected countries, this article got the global energy interconnection development index ranking and level classification.

  7. Interconnect fatigue design for terrestrial photovoltaic modules

    Science.gov (United States)

    Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

    1982-03-01

    The results of comprehensive investigation of interconnect fatigue that has led to the definition of useful reliability-design and life-prediction algorithms are presented. Experimental data indicate that the classical strain-cycle (fatigue) curve for the interconnect material is a good model of mean interconnect fatigue performance, but it fails to account for the broad statistical scatter, which is critical to reliability prediction. To fill this shortcoming the classical fatigue curve is combined with experimental cumulative interconnect failure rate data to yield statistical fatigue curves (having failure probability as a parameter) which enable (1) the prediction of cumulative interconnect failures during the design life of an array field, and (2) the unambiguous--ie., quantitative--interpretation of data from field-service qualification (accelerated thermal cycling) tests. Optimal interconnect cost-reliability design algorithms are derived based on minimizing the cost of energy over the design life of the array field.

  8. Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2$\\cdot 10^{15}$\\,n$_{\\mathrm{eq}}$/cm$^2$

    CERN Document Server

    INSPIRE-00237859; Beimforde, M.; Macchiolo, A.; Moser, H.G.; Nisius, R.; Richter, R.H.

    2011-01-01

    A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to $2\\cdot10^{15}$\\,\

  9. Recent Development of SOFC Metallic Interconnect

    Energy Technology Data Exchange (ETDEWEB)

    Wu JW, Liu XB

    2010-04-01

    Interest in solid oxide fuel cells (SOFC) stems from their higher e±ciencies and lower levels of emitted pollu- tants, compared to traditional power production methods. Interconnects are a critical part in SOFC stacks, which connect cells in series electrically, and also separate air or oxygen at the cathode side from fuel at the anode side. Therefore, the requirements of interconnects are the most demanding, i:e:, to maintain high elec- trical conductivity, good stability in both reducing and oxidizing atmospheres, and close coe±cient of thermal expansion (CTE) match and good compatibility with other SOFC ceramic components. The paper reviewed the interconnect materials, and coatings for metallic interconnect materials.

  10. Examination of Critical Length Effect in Copper Interconnects With Oxide and Low-k Dielectrics

    International Nuclear Information System (INIS)

    Thrasher, Stacye; Gall, Martin; Justison, Patrick; Hernandez, Richard; Kawasaki, Hisao; Capasso, Cristiano; Nguyen, Timothy

    2004-01-01

    As technology moves toward faster microelectronic devices with smaller feature sizes, copper is replacing aluminum-copper alloy and low-k dielectric is replacing oxide as the materials of choice for advanced interconnect integrations. Copper not only brings to the table the advantage of lower resistivity, but also exhibits better electromigration performance when compared to Al(Cu). Low-k dielectric materials are advantageous because they reduce power consumption and improve signal delay. Due to these advantages, the industry trend is moving towards integrating copper and low-k dielectric for high performance interconnects. The purpose of this study is to evaluate the critical length effect in single-inlaid copper interconnects and determine the critical product (jl)c, for a variety of integrations, examining the effect of ILD (oxide vs. low-k), geometry, and stress temperature

  11. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990

    International Nuclear Information System (INIS)

    Razeghi, M.

    1991-01-01

    The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry

  12. Carbon Nanotubes and Graphene Nanoribbons: Potentials for Nanoscale Electrical Interconnects

    Directory of Open Access Journals (Sweden)

    Swastik Kar

    2013-08-01

    Full Text Available Carbon allotropes have generated much interest among different scientific communities due to their peculiar properties and potential applications in a variety of fields. Carbon nanotubes and more recently graphene have shown very interesting electrical properties along with the possibility of being grown and/or deposited at a desired location. In this Review, we will focus our attention on carbon-based nanostructures (in particular, carbon nanotubes and graphene nanoribbons which could play an important role in the technological quest to replace copper/low-k for interconnect applications. We will provide the reader with a number of possible architectures, including single-wall as well as multi-wall carbon nanotubes, arranged in horizontal and vertical arrays, regarded as individual objects as well as bundles. Modification of their functional properties in order to fulfill interconnect applications requirements are also presented. Then, in the second part of the Review, recently discovered graphene and in particular graphene and few-graphene layers nanoribbons are introduced. Different architectures involving nanostructured carbon are presented and discussed in light of interconnect application in terms of length, chirality, edge configuration and more.

  13. Misalignment corrections in optical interconnects

    Science.gov (United States)

    Song, Deqiang

    Optical interconnects are considered a promising solution for long distance and high bitrate data transmissions, outperforming electrical interconnects in terms of loss and dispersion. Due to the bandwidth and distance advantage of optical interconnects, longer links have been implemented with optics. Recent studies show that optical interconnects have clear advantages even at very short distances---intra system interconnects. The biggest challenge for such optical interconnects is the alignment tolerance. Many free space optical components require very precise assembly and installation, and therefore the overall cost could be increased. This thesis studied the misalignment tolerance and possible alignment correction solutions for optical interconnects at backplane or board level. First the alignment tolerance for free space couplers was simulated and the result indicated the most critical alignments occur between the VCSEL, waveguide and microlens arrays. An in-situ microlens array fabrication method was designed and experimentally demonstrated, with no observable misalignment with the waveguide array. At the receiver side, conical lens arrays were proposed to replace simple microlens arrays for a larger angular alignment tolerance. Multilayer simulation models in CodeV were built to optimized the refractive index and shape profiles of the conical lens arrays. Conical lenses fabricated with micro injection molding machine and fiber etching were characterized. Active component VCSOA was used to correct misalignment in optical connectors between the board and backplane. The alignment correction capability were characterized for both DC and AC (1GHz) optical signal. The speed and bandwidth of the VCSOA was measured and compared with a same structure VCSEL. Based on the optical inverter being studied in our lab, an all-optical flip-flop was demonstrated using a pair of VCSOAs. This memory cell with random access ability can store one bit optical signal with set or

  14. Multi-gigabit optical interconnects for next-generation on-board digital equipment

    Science.gov (United States)

    Venet, Norbert; Favaro, Henri; Sotom, Michel; Maignan, Michel; Berthon, Jacques

    2017-11-01

    Parallel optical interconnects are experimentally assessed as a technology that may offer the high-throughput data communication capabilities required to the next-generation on-board digital processing units. An optical backplane interconnect was breadboarded, on the basis of a digital transparent processor that provides flexible connectivity and variable bandwidth in telecom missions with multi-beam antenna coverage. The unit selected for the demonstration required that more than tens of Gbit/s be supported by the backplane. The demonstration made use of commercial parallel optical link modules at 850 nm wavelength, with 12 channels running at up to 2.5 Gbit/s. A flexible optical fibre circuit was developed so as to route board-to-board connections. It was plugged to the optical transmitter and receiver modules through 12-fibre MPO connectors. BER below 10-14 and optical link budgets in excess of 12 dB were measured, which would enable to integrate broadcasting. Integration of the optical backplane interconnect was successfully demonstrated by validating the overall digital processor functionality.

  15. Seeing smells: development of an optoelectronic nose

    Directory of Open Access Journals (Sweden)

    Kenneth S. Suslick

    2007-06-01

    Full Text Available The development of an array of chemically-responsive dyes on a porous membrane and in its use as a general sensor for odors and volatile organic compounds (VOCs is reviewed. These colorimetric sensor arrays (CSA act as an "optoelectronic nose" by using an array of multiple dyes whose color changes are based on the full range of intermolecular interactions. The CSA is digitally imaged before and after exposure and the resulting difference map provides a digital fingerprint for any VOC or mixture of odorants. The result is an enormous increase in discriminatory power among odorants compared to prior electronic nose technologies. For the detection of biologically important analytes, including amines, carboxylic acids, and thiols, high sensitivities (ppbv have been demonstrated. The array is essentially non-responsive to changes in humidity due to the hydrophobicity of the dyes and membrane.

  16. Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects.

    Science.gov (United States)

    Jeon, Sanghun; Song, Ihun; Lee, Sungsik; Ryu, Byungki; Ahn, Seung-Eon; Lee, Eunha; Kim, Young; Nathan, Arokia; Robertson, John; Chung, U-In

    2014-11-05

    A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Reconfigurable Optical Interconnections Via Dynamic Computer-Generated Holograms

    Science.gov (United States)

    Liu, Hua-Kuang (Inventor); Zhou, Shao-Min (Inventor)

    1996-01-01

    A system is presented for optically providing one-to-many irregular interconnections, and strength-adjustable many-to-many irregular interconnections which may be provided with strengths (weights) w(sub ij) using multiple laser beams which address multiple holograms and means for combining the beams modified by the holograms to form multiple interconnections, such as a cross-bar switching network. The optical means for interconnection is based on entering a series of complex computer-generated holograms on an electrically addressed spatial light modulator for real-time reconfigurations, thus providing flexibility for interconnection networks for large-scale practical use. By employing multiple sources and holograms, the number of interconnection patterns achieved is increased greatly.

  18. Visualizing interconnections among climate risks

    Science.gov (United States)

    Tanaka, K.; Yokohata, T.; Nishina, K.; Takahashi, K.; Emori, S.; Kiguchi, M.; Iseri, Y.; Honda, Y.; Okada, M.; Masaki, Y.; Yamamoto, A.; Shigemitsu, M.; Yoshimori, M.; Sueyoshi, T.; Hanasaki, N.; Ito, A.; Sakurai, G.; Iizumi, T.; Nishimori, M.; Lim, W. H.; Miyazaki, C.; Kanae, S.; Oki, T.

    2015-12-01

    It is now widely recognized that climate change is affecting various sectors of the world. Climate change impact on one sector may spread out to other sectors including those seemingly remote, which we call "interconnections of climate risks". While a number of climate risks have been identified in the Intergovernmental Panel on Climate Change (IPCC) Fifth Assessment Report (AR5), there has been no attempt to explore their interconnections comprehensively. Here we present a first and most exhaustive visualization of climate risks drawn based on a systematic literature survey. Our risk network diagrams depict that changes in the climate system impact natural capitals (terrestrial water, crop, and agricultural land) as well as social infrastructures, influencing the socio-economic system and ultimately our access to food, water, and energy. Our findings suggest the importance of incorporating climate risk interconnections into impact and vulnerability assessments and call into question the widely used damage function approaches, which address a limited number of climate change impacts in isolation. Furthermore, the diagram is useful to educate decision makers, stakeholders, and general public about cascading risks that can be triggered by the climate change. Socio-economic activities today are becoming increasingly more inter-dependent because of the rapid technological progress, urbanization, and the globalization among others. Equally complex is the ecosystem that is susceptible to climate change, which comprises interwoven processes affecting one another. In the context of climate change, a number of climate risks have been identified and classified according to regions and sectors. These reports, however, did not fully address the inter-relations among risks because of the complexity inherent in this issue. Climate risks may ripple through sectors in the present inter-dependent world, posing a challenge ahead of us to maintain the resilience of the system. It is

  19. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

    Science.gov (United States)

    Moustakas, Theodore D.; Paiella, Roberto

    2017-10-01

    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  20. IM/DD vs. 4-PAM Using a 1550-nm VCSEL over Short-Range SMF/MMF Links for Optical Interconnects

    DEFF Research Database (Denmark)

    Karinou, Fotini; Rodes Lopez, Roberto; Prince, Kamau

    2013-01-01

    We experimentally compare the performance of 10.9-Gb/s IM/DD and 5-GBd 4-PAM modulation formats over 5-km SMF and 1-km MMF links, employing a commercially-available 1550-nm VCSEL as an enabling technology for use in optical interconnects.......We experimentally compare the performance of 10.9-Gb/s IM/DD and 5-GBd 4-PAM modulation formats over 5-km SMF and 1-km MMF links, employing a commercially-available 1550-nm VCSEL as an enabling technology for use in optical interconnects....

  1. Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance

    KAUST Repository

    Banavoth, Murali

    2016-12-14

    Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including various fabrication methods, device architectures, and surface passivation, progress is yet to be made in understanding the actual operational temperature on the electronic properties and the device performances. Therefore, the substantial effect of temperature on the optoelectronic properties, charge separation, charge recombination dynamics, and photoconversion efficiency are explored. The results clearly demonstrated a significant enhancement in the carrier mobility, photocurrent, charge carrier lifetime, and solar cell performance in the 60 ± 5 °C temperature range. In this temperature range, perovskite crystal exhibits a highly symmetrical relaxed cubic structure with well-aligned domains that are perpendicular to a principal axis, thereby remarkably improving the device operation. This finding provides a new key variable component and paves the way toward using perovskite crystals in highly efficient photovoltaic cells.

  2. Unavailability of critical SCADA communication links interconnecting a power grid and a Telco network

    International Nuclear Information System (INIS)

    Bobbio, A.; Bonanni, G.; Ciancamerla, E.; Clemente, R.; Iacomini, A.; Minichino, M.; Scarlatti, A.; Terruggia, R.; Zendri, E.

    2010-01-01

    The availability of power supply to power grid customers depends upon the availability of services of supervision, control and data acquisition (SCADA) system, which constitutes the nervous system of a power grid. In turn, SCADA services depend on the availability of the interconnected networks supporting such services. We propose a service oriented stochastic modelling methodology to investigate the availability of large interconnected networks, based on the hierarchical application of different modelling formalisms to different parts of the networks. Interconnected networks are decomposed according to the specific services delivered until the failure and repair mechanisms of the decomposed elementary blocks can be identified. We represent each network by a convenient stochastic modelling formalism, able to capture the main technological issues and to cope with realistic assumptions about failure and recovery mechanisms. This procedure confines the application of the more intensive computational techniques to those subsystems that actually require it. The paper concentrates on an actual failure scenario, occurred in Rome in January 2004 that involved the outage of critical SCADA communication links, interconnecting a power grid and a Telco network.

  3. Unavailability of critical SCADA communication links interconnecting a power grid and a Telco network

    Energy Technology Data Exchange (ETDEWEB)

    Bobbio, A. [Dipartimento di Informatica, Universita del Piemonte Orientale, Viale Michel 11, 15121 Alessandria (Italy); Bonanni, G.; Ciancamerla, E. [ENEA - CRE Casaccia, Via Anguillarese 301, 00060 Roma (Italy); Clemente, R. [Telecom Italia Mobile, Via Isonzo112, 10141 Torino (Italy); Iacomini, A. [ACEA, Pl. Ostiense 2, 00154 Roma (Italy); Minichino, M., E-mail: minichino@casaccia.enea.i [ENEA - CRE Casaccia, Via Anguillarese 301, 00060 Roma (Italy); Scarlatti, A. [ACEA, Pl. Ostiense 2, 00154 Roma (Italy); Terruggia, R. [Dipartimento di Informatica, Universita del Piemonte Orientale, Viale Michel 11, 15121 Alessandria (Italy); Zendri, E. [ACEA, Pl. Ostiense 2, 00154 Roma (Italy)

    2010-12-15

    The availability of power supply to power grid customers depends upon the availability of services of supervision, control and data acquisition (SCADA) system, which constitutes the nervous system of a power grid. In turn, SCADA services depend on the availability of the interconnected networks supporting such services. We propose a service oriented stochastic modelling methodology to investigate the availability of large interconnected networks, based on the hierarchical application of different modelling formalisms to different parts of the networks. Interconnected networks are decomposed according to the specific services delivered until the failure and repair mechanisms of the decomposed elementary blocks can be identified. We represent each network by a convenient stochastic modelling formalism, able to capture the main technological issues and to cope with realistic assumptions about failure and recovery mechanisms. This procedure confines the application of the more intensive computational techniques to those subsystems that actually require it. The paper concentrates on an actual failure scenario, occurred in Rome in January 2004 that involved the outage of critical SCADA communication links, interconnecting a power grid and a Telco network.

  4. The Advances, Challenges and Future Possibilities of Millimeter-Wave Chip-to-Chip Interconnections for Multi-Chip Systems

    Directory of Open Access Journals (Sweden)

    Amlan Ganguly

    2018-02-01

    Full Text Available With aggressive scaling of device geometries, density of manufacturing faults is expected to increase. Therefore, yield of complex Multi-Processor Systems-on-Chips (MP-SoCs will decrease due to higher probability of manufacturing defects especially, in dies with large area. Therefore, disintegration of large SoCs into smaller chips called chiplets will improve yield and cost of complex platform-based systems. This will also provide functional flexibility, modular scalability as well as the capability to integrate heterogeneous architectures and technologies in a single unit. However, with scaling of the number of chiplets in such a system, the shared resources in the system such as the interconnection fabric and memory modules will become performance bottlenecks. Additionally, the integration of heterogeneous chiplets operating at different frequencies and voltages can be challenging. State-of-the-art inter-chip communication requires power-hungry high-speed I/O circuits and data transfer over long wired traces on substrates. This increases energy consumption and latency while decreasing data bandwidth for chip-to-chip communication. In this paper, we explore the advances and the challenges of interconnecting a multi-chip system with millimeter-wave (mm-wave wireless interconnects from a variety of perspectives spanning multiple aspects of the wireless interconnection design. Our discussion on the recent advances include aspects such as interconnection topology, physical layer, Medium Access Control (MAC and routing protocols. We also present some potential paradigm-shifting applications as well as complementary technologies of wireless inter-chip communications.

  5. Installation and Quality Assurance of the Interconnections between Cryo-assemblies of the LHC Long Straight Sections

    CERN Document Server

    Garion, C; Tock, J P

    2006-01-01

    The interconnections between the cryomagnets and cryogenic utilities in the LHC long Straight Sections constitute the last machine installation activity. They are ensuring continuity of the beam and insulation vacuum systems, cryogenic fluid and electrical circuits and thermal insulation. The assembly is carried out in a constraining tunnel environment with restricted space. Therefore, the assembly sequence has to be well defined and specific tests have to be performed during the interconnection work to secure the reliability of the system and thus to ensure the global accelerator availability. The LHC has 8 long straight insertion zones composed of special cryomagnets involving specific interconnection procedures and QA plans. The aim of this paper is to present the installation and quality assurance procedures implemented for the LHC LSS interconnections. Technologies such as manual and automatic welding and resistive soldering will be described as well as the different quality controls, such as visual and ...

  6. Electrical transport and electromigration studies on nickel encapsulated carbon nanotubes: possible future interconnects

    International Nuclear Information System (INIS)

    Kulshrestha, Neha; Misra, D S; Misra, Abhishek

    2013-01-01

    We nominate the nickel filled multiwalled carbon nanotubes (MWNTs) as potential candidates to cope with challenges in persistent scaling for future interconnect technology. The insights into electrical transport through nickel filled carbon nanotubes provide an effective solution for major performance and reliability issues such as the increasing resistivity of metals at reduced scales, electromigration at high current densities and the problem of diffusion and corrosion faced by the existing copper interconnect technology. Furthermore, the nickel filled MWNTs outperform their hollow counterparts, the unfilled MWNTs, carrying at least one order higher current density, with increased time to failure. The results suggest that metal filled carbon nanotubes can provide a twofold benefit: (1) the metal filling provides an increased density of states for the system leading to a higher current density compared to hollow MWNTs, (2) metal out-diffusion and corrosion is prevented by the surrounding graphitic walls. (paper)

  7. 47 CFR 90.477 - Interconnected systems.

    Science.gov (United States)

    2010-10-01

    ... part and medical emergency systems in the 450-470 MHz band, interconnection will be permitted only... operating on frequencies in the bands below 800 MHz are not subject to the interconnection provisions of...

  8. Carbon nanotubes for interconnects process, design and applications

    CERN Document Server

    Dijon, Jean; Maffucci, Antonio

    2017-01-01

    This book provides a single-source reference on the use of carbon nanotubes (CNTs) as interconnect material for horizontal, on-chip and 3D interconnects. The authors demonstrate the uses of bundles of CNTs, as innovative conducting material to fabricate interconnect through-silicon vias (TSVs), in order to improve the performance, reliability and integration of 3D integrated circuits (ICs). This book will be first to provide a coherent overview of exploiting carbon nanotubes for 3D interconnects covering aspects from processing, modeling, simulation, characterization and applications. Coverage also includes a thorough presentation of the application of CNTs as horizontal on-chip interconnects which can potentially revolutionize the nanoelectronics industry. This book is a must-read for anyone interested in the state-of-the-art on exploiting carbon nanotubes for interconnects for both 2D and 3D integrated circuits. Provides a single-source reference on carbon nanotubes for interconnect applications; Includes c...

  9. Authentication in Virtual Organizations: A Reputation Based PKI Interconnection Model

    Science.gov (United States)

    Wazan, Ahmad Samer; Laborde, Romain; Barrere, Francois; Benzekri, Abdelmalek

    Authentication mechanism constitutes a central part of the virtual organization work. The PKI technology is used to provide the authentication in each organization involved in the virtual organization. Different trust models are proposed to interconnect the different PKIs in order to propagate the trust between them. While the existing trust models contain many drawbacks, we propose a new trust model based on the reputation of PKIs.

  10. Silicon photonic IC embedded optical-PCB for high-speed interconnect application

    Science.gov (United States)

    Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar

    2018-02-01

    Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.

  11. Interconnecting heterogeneous database management systems

    Science.gov (United States)

    Gligor, V. D.; Luckenbaugh, G. L.

    1984-01-01

    It is pointed out that there is still a great need for the development of improved communication between remote, heterogeneous database management systems (DBMS). Problems regarding the effective communication between distributed DBMSs are primarily related to significant differences between local data managers, local data models and representations, and local transaction managers. A system of interconnected DBMSs which exhibit such differences is called a network of distributed, heterogeneous DBMSs. In order to achieve effective interconnection of remote, heterogeneous DBMSs, the users must have uniform, integrated access to the different DBMs. The present investigation is mainly concerned with an analysis of the existing approaches to interconnecting heterogeneous DBMSs, taking into account four experimental DBMS projects.

  12. Optoelectronic switch matrix as a look-up table for residue arithmetic.

    Science.gov (United States)

    Macdonald, R I

    1987-10-01

    The use of optoelectronic matrix switches to perform look-up table functions in residue arithmetic processors is proposed. In this application, switchable detector arrays give the advantage of a greatly reduced requirement for optical sources by comparison with previous optoelectronic residue processors.

  13. 1st International Conference on Opto-Electronics and Applied Optics

    CERN Document Server

    Bhattacharya, Indrani

    2015-01-01

    The Proceedings of First International Conference on Opto-Electronics and Applied Optics 2014, IEM OPTRONIX 2014 presents the research contributions presented in the conference by researchers from both India and abroad. Contributions from established scientists as well as students are included. The book is organized to enable easy access to various topics of interest.   The first part includes the Keynote addresses by Phillip Russell, Max Planck Institute of the Light Sciences, Erlangen, Germany and Lorenzo Pavesi, University of Trento, Italy.   The second part focuses on the Plenary Talks given by eminent scientists, namely, Azizur Rahman, City University London, London; Bishnu Pal, President, The Optical Society of India; Kamakhya Ghatak, National Institute of Technology, Agartala; Kehar Singh, Former Professor, India Institute of Technology Delhi; Mourad Zghal, SUPCOM, University of Carthage, Tunisia; Partha Roy Chaudhuri, IIT Kharagpur; S K. Bhadra, CSIR-Central Glass and Ceramic Research Institute, Kol...

  14. Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

    Science.gov (United States)

    Gooth, Johannes; Borg, Mattias; Schmid, Heinz; Schaller, Vanessa; Wirths, Stephan; Moselund, Kirsten; Luisier, Mathieu; Karg, Siegfried; Riel, Heike

    2017-04-12

    Coherent interconnection of quantum bits remains an ongoing challenge in quantum information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits, comprising individual NW devices that are linked through ballistic interconnects. However, maintaining the sensitive ballistic conduction and confinement conditions across NW intersections is a nontrivial problem. Here, we go beyond the characterization of a single NW device and demonstrate ballistic one-dimensional (1D) quantum transport in InAs NW cross-junctions, monolithically integrated on Si. Characteristic 1D conductance plateaus are resolved in field-effect measurements across up to four NW-junctions in series. The 1D ballistic transport and sub-band splitting is preserved for both crossing-directions. We show that the 1D modes of a single injection terminal can be distributed into multiple NW branches. We believe that NW cross-junctions are well-suited as cross-directional communication links for the reliable transfer of quantum information as required for quantum computational systems.

  15. Manufacturing of planar ceramic interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, B.L.; Coffey, G.W.; Meinhardt, K.D.; Armstrong, T.R. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-12-31

    The fabrication of ceramic interconnects for solid oxide fuel cells (SOFC) and separator plates for electrochemical separation devices has been a perennial challenge facing developers. Electrochemical vapor deposition (EVD), plasma spraying, pressing, tape casting and tape calendering are processes that are typically utilized to fabricate separator plates or interconnects for the various SOFC designs and electrochemical separation devices. For sake of brevity and the selection of a planar fuel cell or gas separation device design, pressing will be the only fabrication technique discussed here. This paper reports on the effect of the characteristics of two doped lanthanum manganite powders used in the initial studies as a planar porous separator for a fuel cell cathode and as a dense interconnect for an oxygen generator.

  16. GaAs optoelectronic neuron arrays

    Science.gov (United States)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  17. Optimal interconnection and renewable targets for north-west Europe

    International Nuclear Information System (INIS)

    Lynch, Muireann Á.; Tol, Richard S.J.; O'Malley, Mark J.

    2012-01-01

    We present a mixed-integer, linear programming model for determining optimal interconnection for a given level of renewable generation using a cost minimisation approach. Optimal interconnection and capacity investment decisions are determined under various targets for renewable penetration. The model is applied to a test system for eight regions in Northern Europe. It is found that considerations on the supply side dominate demand side considerations when determining optimal interconnection investment: interconnection is found to decrease generation capacity investment and total costs only when there is a target for renewable generation. Higher wind integration costs see a concentration of wind in high-wind regions with interconnection to other regions. - Highlights: ► We use mixed-integer linear programming to determine optimal interconnection locations for given renewable targets. ► The model is applied to a test system for eight regions in Northern Europe. ► Interconnection reduces costs only when there is a renewable target. ► Wind integration costs affect the interconnection portfolio.

  18. Advances in graphene-based optoelectronics, plasmonics and photonics

    International Nuclear Information System (INIS)

    Nguyen, Bich Ha; Nguyen, Van Hieu

    2016-01-01

    Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented. (review)

  19. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    Science.gov (United States)

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  20. Strategic siting and regional grid interconnections key to low-carbon futures in African countries

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Grace C. [Univ. of California, Berkeley, CA (United States). Energy and Resources Group; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). International Energy Studies Group; Deshmukh, Ranjit [Univ. of California, Berkeley, CA (United States). Energy and Resources Group; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). International Energy Studies Group; Ndhlukula, Kudakwashe [Namibia Univ. of Science and Technology, Windhoek, (Namibia). Southern Africa Development Community (SADC) Centre for Renewable Energy and Energy Efficiency; Radojicic, Tijana [International Renewable Energy Agency, Masdar City, Abu Dhabi (United Arab Emirates); Reilly-Moman, Jessica [Univ. of California, Berkeley, CA (United States). Energy and Resources Group; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). International Energy Studies Group; Phadke, Amol [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). International Energy Studies Group; Kammen, Daniel M. [Univ. of California, Berkeley, CA (United States). Energy and Resources Group; Callaway, Duncan S. [Univ. of California, Berkeley, CA (United States). Energy and Resources Group

    2017-03-27

    Recent forecasts suggest that African countries must triple their current electricity generation by 2030. Our multicriteria assessment of wind and solar potential for large regions of Africa shows how economically competitive and low-environmental– impact renewable resources can significantly contribute to meeting this demand. We created the Multicriteria Analysis for Planning Renewable Energy (MapRE) framework to map and characterize solar and wind energy zones in 21 countries in the Southern African Power Pool (SAPP) and the Eastern Africa Power Pool (EAPP) and find that potential is several times greater than demand in many countries. Significant fractions of demand can be quickly served with “no-regrets” options—or zones that are low-cost, low-environmental impact, and highly accessible. Because no-regrets options are spatially heterogeneous, international interconnections are necessary to help achieve low-carbon development for the region as a whole, and interconnections that support the best renewable options may differ from those planned for hydropower expansion. Additionally, interconnections and selecting wind sites to match demand reduce the need for SAPP-wide conventional generation capacity by 9.5% in a high-wind scenario, resulting in a 6–20% cost savings, depending on the avoided conventional technology. Strategic selection of low-impact and accessible zones is more cost effective with interconnections compared with solutions without interconnections. In conclusion, the overall results are robust to multiple load growth scenarios. Together, results show that multicriteria site selection and deliberate planning of interconnections may significantly increase the economic and environmental competitiveness of renewable alternatives relative to conventional generation.

  1. Strategic siting and regional grid interconnections key to low-carbon futures in African countries.

    Science.gov (United States)

    Wu, Grace C; Deshmukh, Ranjit; Ndhlukula, Kudakwashe; Radojicic, Tijana; Reilly-Moman, Jessica; Phadke, Amol; Kammen, Daniel M; Callaway, Duncan S

    2017-04-11

    Recent forecasts suggest that African countries must triple their current electricity generation by 2030. Our multicriteria assessment of wind and solar potential for large regions of Africa shows how economically competitive and low-environmental-impact renewable resources can significantly contribute to meeting this demand. We created the Multicriteria Analysis for Planning Renewable Energy (MapRE) framework to map and characterize solar and wind energy zones in 21 countries in the Southern African Power Pool (SAPP) and the Eastern Africa Power Pool (EAPP) and find that potential is several times greater than demand in many countries. Significant fractions of demand can be quickly served with "no-regrets" options-or zones that are low-cost, low-environmental impact, and highly accessible. Because no-regrets options are spatially heterogeneous, international interconnections are necessary to help achieve low-carbon development for the region as a whole, and interconnections that support the best renewable options may differ from those planned for hydropower expansion. Additionally, interconnections and selecting wind sites to match demand reduce the need for SAPP-wide conventional generation capacity by 9.5% in a high-wind scenario, resulting in a 6-20% cost savings, depending on the avoided conventional technology. Strategic selection of low-impact and accessible zones is more cost effective with interconnections compared with solutions without interconnections. Overall results are robust to multiple load growth scenarios. Together, results show that multicriteria site selection and deliberate planning of interconnections may significantly increase the economic and environmental competitiveness of renewable alternatives relative to conventional generation.

  2. The Interconnections of the LHC Cryomagnets

    CERN Document Server

    Jacquemod, A; Skoczen, Blazej; Tock, J P

    2001-01-01

    The main components of the LHC, the next world-class facility in high-energy physics, are the twin-aperture high-field superconducting cryomagnets to be installed in the existing 26.7-km long tunnel. After installation and alignment, the cryomagnets have to be interconnected. The interconnections must ensure the continuity of several functions: vacuum enclosures, beam pipe image currents (RF contacts), cryogenic circuits, electrical power supply, and thermal insulation. In the machine, about 1700 interconnections between cryomagnets are necessary. The interconnections constitute a unique system that is nearly entirely assembled in the tunnel. For each of them, various operations must be done: TIG welding of cryogenic channels (~ 50 000 welds), induction soldering of main superconducting cables (~ 10 000 joints), ultrasonic welding of auxiliary superconducting cables (~ 20 000 welds), mechanical assembly of various elements, and installation of the multi-layer insulation (~ 200 000 m2). Defective junctions cou...

  3. Epidemics in interconnected small-world networks.

    Science.gov (United States)

    Liu, Meng; Li, Daqing; Qin, Pengju; Liu, Chaoran; Wang, Huijuan; Wang, Feilong

    2015-01-01

    Networks can be used to describe the interconnections among individuals, which play an important role in the spread of disease. Although the small-world effect has been found to have a significant impact on epidemics in single networks, the small-world effect on epidemics in interconnected networks has rarely been considered. Here, we study the susceptible-infected-susceptible (SIS) model of epidemic spreading in a system comprising two interconnected small-world networks. We find that the epidemic threshold in such networks decreases when the rewiring probability of the component small-world networks increases. When the infection rate is low, the rewiring probability affects the global steady-state infection density, whereas when the infection rate is high, the infection density is insensitive to the rewiring probability. Moreover, epidemics in interconnected small-world networks are found to spread at different velocities that depend on the rewiring probability.

  4. Epidemics in interconnected small-world networks.

    Directory of Open Access Journals (Sweden)

    Meng Liu

    Full Text Available Networks can be used to describe the interconnections among individuals, which play an important role in the spread of disease. Although the small-world effect has been found to have a significant impact on epidemics in single networks, the small-world effect on epidemics in interconnected networks has rarely been considered. Here, we study the susceptible-infected-susceptible (SIS model of epidemic spreading in a system comprising two interconnected small-world networks. We find that the epidemic threshold in such networks decreases when the rewiring probability of the component small-world networks increases. When the infection rate is low, the rewiring probability affects the global steady-state infection density, whereas when the infection rate is high, the infection density is insensitive to the rewiring probability. Moreover, epidemics in interconnected small-world networks are found to spread at different velocities that depend on the rewiring probability.

  5. Practical opto-electronics an illustrated guide for the laboratory

    CERN Document Server

    Protopopov, Vladimir

    2014-01-01

    This book explains how to create opto-electronic systems in a most efficient way, avoiding typical mistakes. It covers light detection techniques, imaging, interferometry, spectroscopy, modulation-demodulation, heterodyning, beam steering, and many other topics common to laboratory applications. The focus is made on self-explanatory figures rather than on words. The book guides the reader through the entire process of creating problem-specific opto-electronic systems, starting from optical source, through beam transportation optical arrangement, to photodetector and data acquisition system. The relevant basics of beam propagation and computer-based raytracing routines are also explained, and sample codes are listed. the book teaches important know-how and practical tricks that are never disclosed in scientific publications.  The book can become the reader's personal adviser in the world of opto-electronics and navigator in the ocean of the market of optical components and systems. Succinct, well-illustrate...

  6. Solar-cell interconnect design for terrestrial photovoltaic modules

    Science.gov (United States)

    Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

    1984-01-01

    Useful solar cell interconnect reliability design and life prediction algorithms are presented, together with experimental data indicating that the classical strain cycle (fatigue) curve for the interconnect material does not account for the statistical scatter that is required in reliability predictions. This shortcoming is presently addressed by fitting a functional form to experimental cumulative interconnect failure rate data, which thereby yields statistical fatigue curves enabling not only the prediction of cumulative interconnect failures during the design life of an array field, but also the quantitative interpretation of data from accelerated thermal cycling tests. Optimal interconnect cost reliability design algorithms are also derived which may allow the minimization of energy cost over the design life of the array field.

  7. 2D and 3D interconnect fabrication by picosecond Laser Induced Forward Transfer

    NARCIS (Netherlands)

    Oosterhuis, G.; Huis in 't veld, A.J.; Chall, P.

    2011-01-01

    Interconnects are an important cost driver in advanced 3D chip packaging. This holds for Through Silicon Vias (TSV) for chip stacking, but also for other integrated Si-technology. Especially in applications with a low number (<100 mm-2) of relatively large (10-2- um diameter), high aspect ratio

  8. Design and Radiation Assessment of Optoelectronic Transceiver Circuits for ITER

    CERN Document Server

    Leroux, P; Van Uffelen, M; Steyaert, M

    2008-01-01

    The presented work describes the design and characterization results of different electronic building blocks for a MGy gamma radiation tolerant optoelectronic transceiver aiming at ITER applications. The circuits are implemented using the 70GHz fT SiGe HBT in a 0.35μm BiCMOS technology. A VCSEL driver circuit has been designed and measured up to a TID of 1.6 MGy and up to a bit rate of 622Mbps. No significant degradation is seen in the eye opening of the output signal. On the receiver side, both a 1GHz, 3kΩ transimpedance and a 5GHz Cherry-Hooper amplifier with over 20dB voltage gain have been designed.

  9. Bridge technology report

    CERN Document Server

    2013-01-01

    Please note this is a Short Discount publication. As LANs have proliferated, new technologies and system concepts have come to the fore. One of the key issues is how to interconnect networks. One means of interconnection is to use a 'bridge'. Other competing technologies are repeaters, routers, and gateways. Bridges permit traffic isolation, connect network segments together and operate at the MAC layer. Further, because they operate at the MAC layer, they can handle a variety of protocols such as TCP/IP, SNA, and X.25. This report focuses on the specific technology of bridging two netw

  10. Optoelectronic devices product assurance guideline for space application

    Science.gov (United States)

    Bensoussan, A.; Vanzi, M.

    2017-11-01

    New opportunities are emerging for the implementation of hardware sub-systems based on OptoElectronic Devices (OED) for space application. Since the end of this decade the main players for space systems namely designers and users including Industries, Agencies, Manufacturers and Laboratories are strongly demanding of adequate strategies to qualify and validate new optoelectronics products and sub-systems [1]. The long term space application mission will require to address either inter-satellite link (free space communication, positioning systems, tracking) or intra-satellite connectivity/flexibility/reconfigurability or high volume of data transfer between equipment installed into payload.

  11. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    International Nuclear Information System (INIS)

    Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-01-01

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

  12. Epidemics in interconnected small-world networks

    NARCIS (Netherlands)

    Liu, M.; Li, D.; Qin, P.; Liu, C.; Wang, H.; Wang, F.

    2015-01-01

    Networks can be used to describe the interconnections among individuals, which play an important role in the spread of disease. Although the small-world effect has been found to have a significant impact on epidemics in single networks, the small-world effect on epidemics in interconnected networks

  13. Interconnect rise time in superconducting integrating circuits

    International Nuclear Information System (INIS)

    Preis, D.; Shlager, K.

    1988-01-01

    The influence of resistive losses on the voltage rise time of an integrated-circuit interconnection is reported. A distribution-circuit model is used to present the interconnect. Numerous parametric curves are presented based on numerical evaluation of the exact analytical expression for the model's transient response. For the superconducting case in which the series resistance of the interconnect approaches zero, the step-response rise time is longer but signal strength increases significantly

  14. 76 FR 39870 - PJM Interconnection, LLC; PJM Power Providers Group v. PJM Interconnection, LLC; Notice of Date...

    Science.gov (United States)

    2011-07-07

    .... EL11-20-001] PJM Interconnection, LLC; PJM Power Providers Group v. PJM Interconnection, LLC; Notice of... Sell Offers for Planned Generation Capacity Resources submitted into PJM's Reliability Pricing Model... presents an opportunity to exercise buyer market power; (2) whether the Fixed Resource Requirement (FRR...

  15. Recent trend in graphene for optoelectronics

    International Nuclear Information System (INIS)

    Chen, Yu-Bin; Liu, John S.; Lin Pang

    2013-01-01

    This study analyzes the scientific knowledge diffusion paths of graphene for optoelectronics (GFO), where graphene offers wide applications due to its thinness, high conductivity, excellent transparency, chemical stability, robustness, and flexibility. Our investigation is based on the main path analysis which establishes the citation links among the literature data in order to trace the significant sequence of knowledge development in this emerging field. We identify the main development paths of GFO up to the year 2012, along which a series of influential papers in this field are identified. The main path graph shows that knowledge diffusion occurs in key subareas, including reduced graphene oxide, chemical vapor deposition, and exfoliation techniques, which are developed for the preparation and applications of GFO. The applications cover solar cells, laser devices, sensing devices, and LCD. In addition, the main theme of GFO research evolves in sequence from small-graphene-sample preparation, to large-scale film growth, and onto prototype device fabrication. This evolution reflects a strong industrial demand for a new transparent–conductive film technology.

  16. Investigation and experimental validation of the contribution of optical interconnects in the SYMPHONIE massively parallel computer

    International Nuclear Information System (INIS)

    Scheer, Patrick

    1998-01-01

    Progress in microelectronics lead to electronic circuits which are increasingly integrated, with an operating frequency and an inputs/outputs count larger than the ones supported by printed circuit board and back-plane technologies. As a result, distributed systems with several boards cannot fully exploit the performance of integrated circuits. In synchronous parallel computers, the situation is worsen since the overall system performances rely on the efficiency of electrical interconnects between the integrated circuits which include the processing elements (PE). The study of a real parallel computer named SYMPHONIE shows for instance that the system operating frequency is far smaller than the capabilities of the microelectronics technology used for the PE implementation. Optical interconnections may cancel these limitations by providing more efficient connections between the PE. Especially, free-space optical interconnections based on vertical-cavity surface-emitting lasers (VCSEL), micro-lens and PIN photodiodes are compatible with the required features of the PE communications. Zero bias modulation of VCSEL with CMOS-compatible digital signals is studied and experimentally demonstrated. A model of the propagation of truncated gaussian beams through micro-lenses is developed. It is then used to optimise the geometry of the detection areas. A dedicated mechanical system is also proposed and implemented for integrating free-space optical interconnects in a standard electronic environment, representative of the one of parallel computer systems. A specially designed demonstrator provides the experimental validation of the above physical concepts. (author) [fr

  17. Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

    Science.gov (United States)

    Savich, Gregory R.

    2004-01-01

    The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the

  18. Implantable optoelectronic probes for in vivo optogenetics

    Science.gov (United States)

    Iseri, Ege; Kuzum, Duygu

    2017-06-01

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  19. Optoelectronic Devices Advanced Simulation and Analysis

    CERN Document Server

    Piprek, Joachim

    2005-01-01

    Optoelectronic devices transform electrical signals into optical signals and vice versa by utilizing the sophisticated interaction of electrons and light within micro- and nano-scale semiconductor structures. Advanced software tools for design and analysis of such devices have been developed in recent years. However, the large variety of materials, devices, physical mechanisms, and modeling approaches often makes it difficult to select appropriate theoretical models or software packages. This book presents a review of devices and advanced simulation approaches written by leading researchers and software developers. It is intended for scientists and device engineers in optoelectronics, who are interested in using advanced software tools. Each chapter includes the theoretical background as well as practical simulation results that help to better understand internal device physics. The software packages used in the book are available to the public, on a commercial or noncommercial basis, so that the interested r...

  20. Crosstalk in modern on-chip interconnects a FDTD approach

    CERN Document Server

    Kaushik, B K; Patnaik, Amalendu

    2016-01-01

    The book provides accurate FDTD models for on-chip interconnects, covering most recent advancements in materials and design. Furthermore, depending on the geometry and physical configurations, different electrical equivalent models for CNT and GNR based interconnects are presented. Based on the electrical equivalent models the performance comparison among the Cu, CNT and GNR-based interconnects are also discussed in the book. The proposed models are validated with the HSPICE simulations. The book introduces the current research scenario in the modeling of on-chip interconnects. It presents the structure, properties, and characteristics of graphene based on-chip interconnects and the FDTD modeling of Cu based on-chip interconnects. The model considers the non-linear effects of CMOS driver as well as the transmission line effects of interconnect line that includes coupling capacitance and mutual inductance effects. In a more realistic manner, the proposed model includes the effect of width-dependent MFP of the ...

  1. Nano/CMOS architectures using a field-programmable nanowire interconnect

    International Nuclear Information System (INIS)

    Snider, Gregory S; Williams, R Stanley

    2007-01-01

    A field-programmable nanowire interconnect (FPNI) enables a family of hybrid nano/CMOS circuit architectures that generalizes the CMOL (CMOS/molecular hybrid) approach proposed by Strukov and Likharev, allowing for simpler fabrication, more conservative process parameters, and greater flexibility in the choice of nanoscale devices. The FPNI improves on a field-programmable gate array (FPGA) architecture by lifting the configuration bit and associated components out of the semiconductor plane and replacing them in the interconnect with nonvolatile switches, which decreases both the area and power consumption of the circuit. This is an example of a more comprehensive strategy for improving the efficiency of existing semiconductor technology: placing a level of intelligence and configurability in the interconnect can have a profound effect on integrated circuit performance, and can be used to significantly extend Moore's law without having to shrink the transistors. Compilation of standard benchmark circuits onto FPNI chip models shows reduced area (8 x to 25 x), reduced power, slightly lower clock speeds, and high defect tolerance-an FPNI chip with 20% defective junctions and 20% broken nanowires has an effective yield of 75% with no significant slowdown along the critical path, compared to a defect-free chip. Simulations show that the density and power improvements continue as both CMOS and nano fabrication parameters scale down, although the maximum clock rate decreases due to the high resistance of very small (<10 nm) metallic nanowires

  2. Development of Innovative Distributed Power Interconnection and Control Systems: Annual Report, December 2000-December 2001

    Energy Technology Data Exchange (ETDEWEB)

    Liss, W.; Dybel, M.; West, R.; Adams, L.

    2002-11-01

    This report covers the first year's work performed by the Gas Technology Institute and Encorp Inc. under subcontract to the National Renewable Energy Laboratory. The objective of this three-year contract is to develop innovative grid interconnection and control systems. This supports the advancement of distributed generation in the marketplace by making installations more cost-effective and compatible across the electric power and energy management systems. Specifically, the goals are: (1) To develop and demonstrate cost-effective distributed power grid interconnection products and software and communication solutions applicable to improving the economics of a broad range of distributed power systems, including existing, emerging, and other power generation technologies. (2) To enhance the features and capabilities of distributed power products to integrate, interact, and provide operational benefits to the electric power and advanced energy management systems. This includes features and capabilities for participating in resource planning, the provision of ancillary services, and energy management. Specific topics of this report include the development of an advanced controller, a power sensing board, expanded communication capabilities, a revenue-grade meter interface, and a case study of an interconnection distributed power system application that is a model for demonstrating the functionalities of the design of the advanced controller.

  3. Review of Interconnection Practices and Costs in the Western States

    Energy Technology Data Exchange (ETDEWEB)

    Bird, Lori A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Flores-Espino, Francisco [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Volpi, Christina M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Ardani, Kristen B [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Manning, David [Western Interstate Energy Board (WIEB); McAllister, Richard [Western Interstate Energy Board (WIEB)

    2018-04-27

    The objective of this report is to evaluate the nature of barriers to interconnecting distributed PV, assess costs of interconnection, and compare interconnection practices across various states in the Western Interconnection. The report addresses practices for interconnecting both residential and commercial-scale PV systems to the distribution system. This study is part of a larger, joint project between the Western Interstate Energy Board (WIEB) and the National Renewable Energy Laboratory (NREL), funded by the U.S. Department of Energy, to examine barriers to distributed PV in the 11 states wholly within the Western Interconnection.

  4. New Development of Membrane Base Optoelectronic Devices

    Directory of Open Access Journals (Sweden)

    Leon Hamui

    2017-12-01

    Full Text Available It is known that one factor that affects the operation of optoelectronic devices is the effective protection of the semiconductor materials against environmental conditions. The permeation of atmospheric oxygen and water molecules into the device structure induces degradation of the electrodes and the semiconductor. As a result, in this communication we report the fabrication of semiconductor membranes consisting of Magnesium Phthalocyanine-allene (MgPc-allene particles dispersed in Nylon 11 films. These membranes combine polymer properties with organic semiconductors properties and also provide a barrier effect for the atmospheric gas molecules. They were prepared by high vacuum evaporation and followed by thermal relaxation technique. For the characterization of the obtained membranes, Fourier-transform infrared spectroscopy (FT-IR, scanning electron microscopy (SEM, and energy dispersive spectroscopy (EDS were used to determine the chemical and microstructural properties. UV-ViS, null ellipsometry, and visible photoluminescence (PL at room temperature were used to characterize the optoelectronic properties. These results were compared with those obtained for the organic semiconductors: MgPc-allene thin films. Additionally, semiconductor membranes devices have been prepared, and a study of the device electronic transport properties was conducted by measuring electrical current density-voltage (J-V characteristics by four point probes with different wavelengths. The resistance properties against different environmental molecules are enhanced, maintaining their semiconductor functionality that makes them candidates for optoelectronic applications.

  5. Progress in the optoelectronic analog signal transfer for high energy particle detectors

    International Nuclear Information System (INIS)

    Tsang, T.; Radeka, V.

    1992-05-01

    We report the progress in the development of a radiation hard Optoelectronic analog system to transfer particle detector signals with high accuracy. We will present the motivation of this study, the operating principle of the optoelectronic system, the system noise study, the recent R ampersand D efforts on radiation effect, temperature stability, and the realization of an integrated l x l6 optical modulator. The issue of photon source for driving such a large-scale optoelectronic modulators is a major concern. We will address this problem by examining different possible photon sources and comment on other possible alternative for signal transfer

  6. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    KAUST Repository

    Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T; Lonergan, Mark C; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau; Javey, Ali

    2016-01-01

    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

  7. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    KAUST Repository

    Wang, Hsin-Ping

    2016-06-08

    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

  8. High bandgap III-V alloys for high efficiency optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  9. Reactive power interconnection requirements for PV and wind plants : recommendations to NERC.

    Energy Technology Data Exchange (ETDEWEB)

    McDowell, Jason (General Electric, Schenectady, NY); Walling, Reigh (General Electric, Schenectady, NY); Peter, William (SunPower, Richmond, CA); Von Engeln, Edi (NV Energy, Reno, NV); Seymour, Eric (AEI, Fort Collins, CO); Nelson, Robert (Siemens Wind Turbines, Orlando, FL); Casey, Leo (Satcon, Boston, MA); Ellis, Abraham; Barker, Chris. (SunPower, Richmond, CA)

    2012-02-01

    Voltage on the North American bulk system is normally regulated by synchronous generators, which typically are provided with voltage schedules by transmission system operators. In the past, variable generation plants were considered very small relative to conventional generating units, and were characteristically either induction generator (wind) or line-commutated inverters (photovoltaic) that have no inherent voltage regulation capability. However, the growing level of penetration of non-traditional renewable generation - especially wind and solar - has led to the need for renewable generation to contribute more significantly to power system voltage control and reactive power capacity. Modern wind-turbine generators, and increasingly PV inverters as well, have considerable dynamic reactive power capability, which can be further enhanced with other reactive support equipment at the plant level to meet interconnection requirements. This report contains a set of recommendations to the North-America Electricity Reliability Corporation (NERC) as part of Task 1-3 (interconnection requirements) of the Integration of Variable Generation Task Force (IVGTF) work plan. The report discusses reactive capability of different generator technologies, reviews existing reactive power standards, and provides specific recommendations to improve existing interconnection standards.

  10. Identifying influential spreaders in interconnected networks

    International Nuclear Information System (INIS)

    Zhao, Dawei; Li, Lixiang; Huo, Yujia; Yang, Yixian; Li, Shudong

    2014-01-01

    Identifying the most influential spreaders in spreading dynamics is of the utmost importance for various purposes for understanding or controlling these processes. The existing relevant works are limited to a single network. Most real networks are actually not isolated, but typically coupled and affected by others. The properties of epidemic spreading have recently been found to have some significant differences in interconnected networks from those in a single network. In this paper, we focus on identifying the influential spreaders in interconnected networks. We find that the well-known k-shell index loses effectiveness; some insignificant spreaders in a single network become the influential spreaders in the whole interconnected networks while some influential spreaders become no longer important. The simulation results show that the spreading capabilities of the nodes not only depend on their influence for the network topology, but also are dramatically influenced by the spreading rate. Based on this perception, a novel index is proposed for measuring the influential spreaders in interconnected networks. We then support the efficiency of this index with numerical simulations. (paper)

  11. High efficiency optoelectronic terahertz sources

    Science.gov (United States)

    Lampin, Jean-François; Peytavit, Emilien; Akalin, Tahsin; Ducournau, G.; Hindle, Francis; Mouret, Gael

    2010-08-01

    We have developed a new generation of optoelectronic large bandwidth terahertz sources based on TEM horn antennas monolithically integrated with several types of photodetectors: low-temperature grown GaAs (LTG-GaAs) planar photoconductors, vertically integrated LTG-GaAs photoconductors on silicon substrate and uni-travelling-carrier photodiodes. Results of pulsed (time-domain) and photomixing (CW, frequency domain) experiments are presented.

  12. Optoelectronic analogue signal transfer for LHC detectors, 1991

    CERN Document Server

    Dowell, John D; Homer, R J; Jovanovic, P; Kenyon, I; Staley, R; Webster, K; Da Via, C; Feyt, J; Nappey, P; Stefanini, G; Dwir, B; Reinhart, F K; Davies, J; Green, N; Stewart, W; Young, T; Hall, G; Akesson, T; Jarlskog, G; Kröll, S; Nickerson, R; Jaroslawski, S; CERN. Geneva. Detector Research and Development Committee

    1991-01-01

    We propose to study and develop opto-electronic analogue front-ends based on electro-optic intensity modulators. These devices translate the detector electrical analogue signals into optical signals which are then transferred via optical fibres to photodetector receivers at the remote readout. In comparison with conventional solutions based on copper cables, this technique offers the advantages of high speed, very low power dissipation and transmission losses, compactness and immunity to electromagnetic interference. The linearity and dynamic range that can be obtained are more than adequate for central tracking detectors, and the proposed devices have considerable radiation- hardness capabilities. The large bandwidth and short transit times offer possibilities for improved triggering schemes. The proposed R&D programme is aimed at producing multi-channel "demonstrator" units for evaluation both in laboratory and beam tests. This will allow the choice of the most effective technology. A detailed study wil...

  13. Contrast image formation based on thermodynamic approach and surface laser oxidation process for optoelectronic read-out system

    Science.gov (United States)

    Scherbak, Aleksandr; Yulmetova, Olga

    2018-05-01

    A pulsed fiber laser with the wavelength 1.06 μm was used to treat titanium nitride film deposited on beryllium substrates in the air with intensities below an ablation threshold to provide oxide formation. Laser oxidation results were predicted by the chemical thermodynamic method and confirmed by experimental techniques (X-ray diffraction). The developed technology of contrast image formation is intended to be used for optoelectronic read-out system.

  14. Regulatory Issues Surrounding Merchant Interconnection

    International Nuclear Information System (INIS)

    Kuijlaars, Kees-Jan; Zwart, Gijsbert

    2003-11-01

    We discussed various issues concerning the regulatory perspective on private investment in interconnectors. One might claim that leaving investment in transmission infrastructure to competing market parties is more efficient than relying on regulated investment only (especially in the case of long (DC) lines connecting previously unconnected parts of the grids, so that externalities from e.g. loop flows do not play a significant role). We considered that some aspects of interconnection might reduce these market benefits. In particular, the large fixed costs of interconnection construction may lead to significant under investment (due to both first mover monopoly power and the fact that part of generation cost efficiencies realised by interconnection are not captured by the investor itself, and remain external to the investment decision). Second, merchant ownership restricts future opportunities for adaptation of regulation, as would be required e.g. for introduction of potentially more sophisticated methods of congestion management or market splitting. Some of the disadvantages of merchant investment may be mitigated however by a suitable regulatory framework, and we discussed some views in this direction. The issues we discussed are not intended to give a complete framework, and detailed regulation will certainly involve many more specific requirements. Areas we did not touch upon include e.g. the treatment of deep connection costs, rules for operation and maintenance of the line, and impact on availability of capacity on other interconnections

  15. Regulatory Issues Surrounding Merchant Interconnection

    Energy Technology Data Exchange (ETDEWEB)

    Kuijlaars, Kees-Jan; Zwart, Gijsbert [Office for Energy Regulation (DTe), The Hague (Netherlands)

    2003-11-01

    We discussed various issues concerning the regulatory perspective on private investment in interconnectors. One might claim that leaving investment in transmission infrastructure to competing market parties is more efficient than relying on regulated investment only (especially in the case of long (DC) lines connecting previously unconnected parts of the grids, so that externalities from e.g. loop flows do not play a significant role). We considered that some aspects of interconnection might reduce these market benefits. In particular, the large fixed costs of interconnection construction may lead to significant under investment (due to both first mover monopoly power and the fact that part of generation cost efficiencies realised by interconnection are not captured by the investor itself, and remain external to the investment decision). Second, merchant ownership restricts future opportunities for adaptation of regulation, as would be required e.g. for introduction of potentially more sophisticated methods of congestion management or market splitting. Some of the disadvantages of merchant investment may be mitigated however by a suitable regulatory framework, and we discussed some views in this direction. The issues we discussed are not intended to give a complete framework, and detailed regulation will certainly involve many more specific requirements. Areas we did not touch upon include e.g. the treatment of deep connection costs, rules for operation and maintenance of the line, and impact on availability of capacity on other interconnections.

  16. Brookhaven segment interconnect

    International Nuclear Information System (INIS)

    Morse, W.M.; Benenson, G.; Leipuner, L.B.

    1983-01-01

    We have performed a high energy physics experiment using a multisegment Brookhaven FASTBUS system. The system was composed of three crate segments and two cable segments. We discuss the segment interconnect module which permits communication between the various segments

  17. The Cellulose Nanofibers for Optoelectronic Conversion and Energy Storage

    Directory of Open Access Journals (Sweden)

    Yongfeng Luo

    2014-01-01

    Full Text Available Cellulose widely exists in plant tissues. Due to the large pores between the cellulose units, the regular paper is nontransparent that cannot be used in the optoelectronic devices. But some chemical and physical methods such as 2,2,6,6-tetramethylpiperidine-1-oxyl radical (TEMPO oxidation can be used to improve the pores scale between the cellulose units to reach nanometer level. The cellulose nanofibers (CNFs have good mechanical strength, flexibility, thermostability, and low thermal expansion. The paper made of these nanofibers represent a kind of novel nanostructured material with ultrahigh transparency, ultrahigh haze, conductivity, biodegradable, reproducible, low pollution, environment friendly and so on. These advantages make the novel nanostructured paper apply in the optoelectronic device possible, such as electronics energy storage devices. This kind of paper is considered most likely to replace traditional materials like plastics and glass, which is attracting widespread attention, and the related research has also been reported. The purpose of this paper is to review CNFs which are applied in optoelectronic conversion and energy storage.

  18. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    Science.gov (United States)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  19. Optical interconnects based on VCSELs and low-loss silicon photonics

    Science.gov (United States)

    Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

    2018-02-01

    Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

  20. Smart City Energy Interconnection Technology Framework Preliminary Research

    Science.gov (United States)

    Zheng, Guotai; Zhao, Baoguo; Zhao, Xin; Li, Hao; Huo, Xianxu; Li, Wen; Xia, Yu

    2018-01-01

    to improve urban energy efficiency, improve the absorptive ratio of new energy resources and renewable energy sources, and reduce environmental pollution and other energy supply and consumption technology framework matched with future energy restriction conditions and applied technology level are required to be studied. Relative to traditional energy supply system, advanced information technology-based “Energy Internet” technical framework may give play to energy integrated application and load side interactive technology advantages, as a whole optimize energy supply and consumption and improve the overall utilization efficiency of energy.

  1. Production process for advanced space satellite system cables/interconnects.

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza, Luis A.

    2007-12-01

    This production process was generated for the satellite system program cables/interconnects group, which in essences had no well defined production process. The driver for the development of a formalized process was based on the set backs, problem areas, challenges, and need improvements faced from within the program at Sandia National Laboratories. In addition, the formal production process was developed from the Master's program of Engineering Management for New Mexico Institute of Mining and Technology in Socorro New Mexico and submitted as a thesis to meet the institute's graduating requirements.

  2. 76 FR 45248 - PJM Interconnection, L.L.C., PJM Power Providers Group v. PJM Interconnection, L.L.C...

    Science.gov (United States)

    2011-07-28

    ...-002; Docket No. EL11-20-001] PJM Interconnection, L.L.C., PJM Power Providers Group v. PJM Interconnection, L.L.C.; Supplemental Notice of Staff Technical Conference On June 13, 2011, the Commission issued... Resources Services, Inc., Maryland Public Service Commission, Monitoring Analytics, L.L.C., National Rural...

  3. Microstructure of III-N semiconductors related to their applications in optoelectronics

    Science.gov (United States)

    Leszczynski, M.; Czernetzki, R.; Sarzynski, M.; Krysko, M.; Targowski, G.; Prystawko, P.; Bockowski, M.; Grzegory, I.; Suski, T.; Domagala, J.; Porowski, S.

    2005-03-01

    There has been more than a decade since Shuji Nakamura from Japanese company Nichia constructed the first blue LED based on structure of (AlGaIn)N semiconductor and eight years since he made the first blue laser diode (LD). This work gives a survey on the current technological status with green/blue/violet/UV optoelectronics based on III-N semiconductors in relation with their microstructure. The following devices are presented: i) Low-power green and blue LEDs, ii) High-power LEDs targeting solid-state white lighting, iii) Low-power violet LDs for high definition DVD market, iv) High-power violet LDs, v) UV LEDs. The discussion will be focused on three main technological problems related to the microstructure of (AlGaIn)N layers in emitters based on III-N semiconductors: i) high density of dislocations in epitaxial layers of GaN on foreign substrates (sapphire, SiC, GaAs), ii), presence of strains, iii) atom segregation in ternary and quaternary compounds.

  4. SSC [Superconducting Super Collider] magnet mechanical interconnections

    International Nuclear Information System (INIS)

    Bossert, R.C.; Niemann, R.C.; Carson, J.A.; Ramstein, W.L.; Reynolds, M.P.; Engler, N.H.

    1989-03-01

    Installation of superconducting accelerator dipole and quadrupole magnets and spool pieces in the SSC tunnel requires the interconnection of the cryostats. The connections are both of an electrical and mechanical nature. The details of the mechanical connections are presented. The connections include piping, thermal shields and insulation. There are seven piping systems to be connected. These systems must carry cryogenic fluids at various pressures or maintain vacuum and must be consistently leak tight. The interconnection region must be able to expand and contract as magnets change in length while cooling and warming. The heat leak characteristics of the interconnection region must be comparable to that of the body of the magnet. Rapid assembly and disassembly is required. The magnet cryostat development program is discussed. Results of quality control testing are reported. Results of making full scale interconnections under magnet test situations are reviewed. 11 figs., 4 tabs

  5. Integrated graphene-based devices for optoelectronic applications

    DEFF Research Database (Denmark)

    Xiao, Sanshui

    Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultralarge absorption bandwidth, and extremely fast material response. Here I present novel integrated grapheneplasmonic waveguide modulator showing high modulation depth, thus giving a promising way...

  6. Electro-optic techniques for VLSI interconnect

    Science.gov (United States)

    Neff, J. A.

    1985-03-01

    A major limitation to achieving significant speed increases in very large scale integration (VLSI) lies in the metallic interconnects. They are costly not only from the charge transport standpoint but also from capacitive loading effects. The Defense Advanced Research Projects Agency, in pursuit of the fifth generation supercomputer, is investigating alternatives to the VLSI metallic interconnects, especially the use of optical techniques to transport the information either inter or intrachip. As the on chip performance of VLSI continues to improve via the scale down of the logic elements, the problems associated with transferring data off and onto the chip become more severe. The use of optical carriers to transfer the information within the computer is very appealing from several viewpoints. Besides the potential for gigabit propagation rates, the conversion from electronics to optics conveniently provides a decoupling of the various circuits from one another. Significant gains will also be realized in reducing cross talk between the metallic routings, and the interconnects need no longer be constrained to the plane of a thin film on the VLSI chip. In addition, optics can offer an increased programming flexibility for restructuring the interconnect network.

  7. Fusion-bonded fluidic interconnects

    International Nuclear Information System (INIS)

    Fazal, I; Elwenspoek, M C

    2008-01-01

    A new approach to realize fluidic interconnects based on the fusion bonding of glass tubes with silicon is presented. Fusion bond strength analyses have been carried out. Experiments with plain silicon wafers and coated with silicon oxide and silicon nitride are performed. The obtained results are discussed in terms of the homogeneity and strength of fusion bond. High pressure testing shows that the bond strength is large enough for most applications of fluidic interconnects. The bond strength for 525 µm thick silicon, with glass tubes having an outer diameter of 6 mm and with a wall thickness of 2 mm, is more than 60 bars after annealing at a temperature of 800 °C

  8. Virtual interconnection platform initiative scoping study

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kou, Gefei [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Pan, Zuohong [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Liu, Yilu [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); King Jr., Thomas J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-01-01

    Due to security and liability concerns, the research community has limited access to realistic large-scale power grid models to test and validate new operation and control methodologies. It is also difficult for industry to evaluate the relative value of competing new tools without a common platform for comparison. This report proposes to develop a large-scale virtual power grid model that retains basic features and represents future trends of major U.S. electric interconnections. This model will include realistic power flow and dynamics information as well as a relevant geospatial distribution of assets. This model will be made widely available to the research community for various power system stability and control studies and can be used as a common platform for comparing the efficacies of various new technologies.

  9. Colligation, Or the Logical Inference of Interconnection

    DEFF Research Database (Denmark)

    Falster, Peter

    1998-01-01

    laws or assumptions. Yet interconnection as an abstract concept seems to be without scientific underpinning in pure logic. Adopting a historical viewpoint, our aim is to show that the reasoning of interconnection may be identified with a neglected kind of logical inference, called "colligation...

  10. Colligation or, The Logical Inference of Interconnection

    DEFF Research Database (Denmark)

    Franksen, Ole Immanuel; Falster, Peter

    2000-01-01

    laws or assumptions. Yet interconnection as an abstract concept seems to be without scientific underpinning in oure logic. Adopting a historical viewpoint, our aim is to show that the reasoning of interconnection may be identified with a neglected kind of logical inference, called "colligation...

  11. Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

    Science.gov (United States)

    Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

    2014-11-01

    While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

  12. Standard Hardware Acquisition and Reliability Program's (SHARP's) efforts in incorporating fiber optic interconnects into standard electronic module (SEM) connectors

    Science.gov (United States)

    Riggs, William R.

    1994-05-01

    SHARP is a Navy wide logistics technology development effort aimed at reducing the acquisition costs, support costs, and risks of military electronic weapon systems while increasing the performance capability, reliability, maintainability, and readiness of these systems. Lower life cycle costs for electronic hardware are achieved through technology transition, standardization, and reliability enhancement to improve system affordability and availability as well as enhancing fleet modernization. Advanced technology is transferred into the fleet through hardware specifications for weapon system building blocks of standard electronic modules, standard power systems, and standard electronic systems. The product lines are all defined with respect to their size, weight, I/O, environmental performance, and operational performance. This method of defining the standard is very conducive to inserting new technologies into systems using the standard hardware. This is the approach taken thus far in inserting photonic technologies into SHARP hardware. All of the efforts have been related to module packaging; i.e. interconnects, component packaging, and module developments. Fiber optic interconnects are discussed in this paper.

  13. Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

    Science.gov (United States)

    Li, Yong-Jun; Sun, Qing-Qing; Chen, Lin; Zhou, Peng; Wang, Peng-Fei; Ding, Shi-Jin; Zhang, David Wei

    2012-03-01

    We proposed intercalation of hexagonal boron nitride (hBN) in multilayer graphene to improve its performance in ultra-scaled interconnects for integrated circuit. The effect of intercalated hBN layer in bilayer graphene is investigated using non-equilibrium Green's functions. We find the hBN intercalated bilayer graphene exhibit enhanced transport properties compared with pristine bilayer ones, and the improvement is attributed to suppression of interlayer scattering and good planar bonding condition of inbetween hBN layer. Based on these results, we proposed a via structure that not only benefits from suppressed interlayer scattering between multilayer graphene, but also sustains the unique electrical properties of graphene when many graphene layers are stacking together. The ideal current density across the structure can be as high as 4.6×109 A/cm2 at 1V, which is very promising for the future high-performance interconnect.

  14. Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

    Directory of Open Access Journals (Sweden)

    Yong-Jun Li

    2012-03-01

    Full Text Available We proposed intercalation of hexagonal boron nitride (hBN in multilayer graphene to improve its performance in ultra-scaled interconnects for integrated circuit. The effect of intercalated hBN layer in bilayer graphene is investigated using non-equilibrium Green's functions. We find the hBN intercalated bilayer graphene exhibit enhanced transport properties compared with pristine bilayer ones, and the improvement is attributed to suppression of interlayer scattering and good planar bonding condition of inbetween hBN layer. Based on these results, we proposed a via structure that not only benefits from suppressed interlayer scattering between multilayer graphene, but also sustains the unique electrical properties of graphene when many graphene layers are stacking together. The ideal current density across the structure can be as high as 4.6×109 A/cm2 at 1V, which is very promising for the future high-performance interconnect.

  15. Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; Fabrim, Zacarias Eduardo; Ahmadpour, Mehrad

    2015-01-01

    In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of the reported films by increasing the oxygen partial pressure from 1.00 ? 10?3 mbar to 1.37 ? 10?3 mbar during...... significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generat- ing a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic...... properties in these films holds strong promise for their implementation in optoelectronic devices....

  16. Area array interconnection handbook

    CERN Document Server

    Totta, Paul A

    2012-01-01

    Microelectronic packaging has been recognized as an important "enabler" for the solid­ state revolution in electronics which we have witnessed in the last third of the twentieth century. Packaging has provided the necessary external wiring and interconnection capability for transistors and integrated circuits while they have gone through their own spectacular revolution from discrete device to gigascale integration. At IBM we are proud to have created the initial, simple concept of flip chip with solder bump connections at a time when a better way was needed to boost the reliability and improve the manufacturability of semiconductors. The basic design which was chosen for SLT (Solid Logic Technology) in the 1960s was easily extended to integrated circuits in the '70s and VLSI in the '80s and '90s. Three I/O bumps have grown to 3000 with even more anticipated for the future. The package families have evolved from thick-film (SLT) to thin-film (metallized ceramic) to co-fired multi-layer ceramic. A later famil...

  17. Interconnected magnetic tunnel junctions for spin-logic applications

    Science.gov (United States)

    Manfrini, Mauricio; Vaysset, Adrien; Wan, Danny; Raymenants, Eline; Swerts, Johan; Rao, Siddharth; Zografos, Odysseas; Souriau, Laurent; Gavan, Khashayar Babaei; Rassoul, Nouredine; Radisic, Dunja; Cupak, Miroslav; Dehan, Morin; Sayan, Safak; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.; Mocuta, Dan; Radu, Iuliana P.

    2018-05-01

    With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wall-based logic technology.

  18. Laser printing of 3D metallic interconnects

    Science.gov (United States)

    Beniam, Iyoel; Mathews, Scott A.; Charipar, Nicholas A.; Auyeung, Raymond C. Y.; Piqué, Alberto

    2016-04-01

    The use of laser-induced forward transfer (LIFT) techniques for the printing of functional materials has been demonstrated for numerous applications. The printing gives rise to patterns, which can be used to fabricate planar interconnects. More recently, various groups have demonstrated electrical interconnects from laser-printed 3D structures. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or of pastes containing dispersed metallic particles. However, the generated 3D structures do not posses the same metallic conductivity as a bulk metal interconnect of the same cross-section and length as those formed by wire bonding or tab welding. An alternative is to laser transfer entire 3D structures using a technique known as lase-and-place. Lase-and-place is a LIFT process whereby whole components and parts can be transferred from a donor substrate onto a desired location with one single laser pulse. This paper will describe the use of LIFT to laser print freestanding, solid metal foils or beams precisely over the contact pads of discrete devices to interconnect them into fully functional circuits. Furthermore, this paper will also show how the same laser can be used to bend or fold the bulk metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief for the circuits under flexing or during motion from thermal mismatch. These interconnect "ridges" can span wide gaps (on the order of a millimeter) and accommodate height differences of tens of microns between adjacent devices. Examples of these laser printed 3D metallic bridges and their role in the development of next generation electronics by additive manufacturing will be presented.

  19. High temperature corrosion of metallic interconnects in solid oxide fuel cells

    International Nuclear Information System (INIS)

    Bastidas, D. M.

    2006-01-01

    Research and development has made it possible to use metallic interconnects in solid oxide fuel cells (SOFC) instead of ceramic materials. The use of metallic interconnects was formerly hindered by the high operating temperature, which made the interconnect degrade too much and too fast to be an efficient alternative. When the operating temperature was lowered, the use of metallic interconnects proved to be favourable since they are easier and cheaper to produce than ceramic interconnects. However, metallic interconnects continue to be degraded despite the lowered temperature, and their corrosion products contribute to electrical degradation in the fuel cell. coatings of nickel, chromium, aluminium, zinc, manganese, yttrium or lanthanum between the interconnect and the electrodes reduce this degradation during operation. (Author) 66 refs

  20. Monocrystalline halide perovskite nanostructures for optoelectronic applications

    NARCIS (Netherlands)

    Khoram, P.

    2018-01-01

    Halide perovskites are a promising class of materials for incorporation in optoelectronics with higher efficiency and lower cost. The solution processability of these materials provides unique opportunities for simple nanostructure fabrication. In the first half of the thesis (chapter 2 and 3) we

  1. Driving Interconnected Networks to Supercriticality

    Directory of Open Access Journals (Sweden)

    Filippo Radicchi

    2014-04-01

    Full Text Available Networks in the real world do not exist as isolated entities, but they are often part of more complicated structures composed of many interconnected network layers. Recent studies have shown that such mutual dependence makes real networked systems potentially exposed to atypical structural and dynamical behaviors, and thus there is an urgent necessity to better understand the mechanisms at the basis of these anomalies. Previous research has mainly focused on the emergence of atypical properties in relation to the moments of the intra- and interlayer degree distributions. In this paper, we show that an additional ingredient plays a fundamental role for the possible scenario that an interconnected network can face: the correlation between intra- and interlayer degrees. For sufficiently high amounts of correlation, an interconnected network can be tuned, by varying the moments of the intra- and interlayer degree distributions, in distinct topological and dynamical regimes. When instead the correlation between intra- and interlayer degrees is lower than a critical value, the system enters in a supercritical regime where dynamical and topological phases are no longer distinguishable.

  2. Modelling of optoelectronic circuits based on resonant tunneling diodes

    Science.gov (United States)

    Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

    2017-08-01

    Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

  3. Financial viability of the Sonora-Baja California interconnection line

    International Nuclear Information System (INIS)

    Alonso, G.; Ortega, G.

    2017-09-01

    In the Development Program of the National Electricity Sector 2015-2029, an electric interconnection line between Sonora and Baja California (Mexico) is proposed, this study analyzes the financial viability of this interconnection line based on the maximum hourly and seasonal energy demand between both regions and proposes alternatives for the supply of electric power that supports the economic convenience of this interconnection line. The results show that additional capacity is required in Sonora to cover the maximum demands of both regions since in the current condition of the National Electric System the interconnection line is not justified. (Author)

  4. Laser printed interconnects for flexible electronics

    Science.gov (United States)

    Pique, Alberto; Beniam, Iyoel; Mathews, Scott; Charipar, Nicholas

    Laser-induced forward transfer (LIFT) can be used to generate microscale 3D structures for interconnect applications non-lithographically. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or dispersed metallic nanoparticles. However, the resulting 3D structures do not achieve the bulk conductivity of metal interconnects of the same cross-section and length as those formed by wire bonding or tab welding. It is possible, however, to laser transfer entire structures using a LIFT technique known as lase-and-place. Lase-and-place allows whole components and parts to be transferred from a donor substrate onto a desired location with one single laser pulse. This talk will present the use of LIFT to laser print freestanding solid metal interconnects to connect individual devices into functional circuits. Furthermore, the same laser can bend or fold the thin metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief due to flexing or thermal mismatch. Examples of these laser printed 3D metallic bridges and their role in the development of next generation flexible electronics by additive manufacturing will be presented. This work was funded by the Office of Naval Research (ONR) through the Naval Research Laboratory Basic Research Program.

  5. Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications

    Science.gov (United States)

    Romeira, Bruno; Figueiredo, José M. L.; Javaloyes, Julien

    2017-11-01

    With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

  6. Carbon nanotube and graphene nanoribbon interconnects

    CERN Document Server

    Das, Debaprasad

    2014-01-01

    "The book, Caron Nanotube and Graphene Nanoribbon Interconnects, authored by Drs. Debapraad Das and Hafizur Rahaman serves as a good source of material on CNT and GNR interconnects for readers who wish to get into this area and also for practicing engineers who would like to be updated in advances of this field."-Prof. Ashok Srivastava, Louisiana State University, Baton Rouge, USA"Mathematical analysis included in each and every chapter is the main strength of the materials. ... The book is very precise and useful for those who are working in this area. ... highly focused, very compact, and easy to apply. ... This book depicts a detailed analysis and modelling of carbon nanotube and graphene nanoribbon interconnects. The book also covers the electrical circuit modelling of carbon nanotubes and graphene nanoribbons."-Prof. Chandan Kumar Sarkar, Jadavpur University, Kolkata, India.

  7. Packaging and interconnection for superconductive circuitry

    International Nuclear Information System (INIS)

    Anacker, W.

    1976-01-01

    A three dimensional microelectronic module packaged for reduced signal propagation delay times including a plurality of circuit carrying means, which may comprise unbacked chips, with integrated superconductive circuitry thereon is described. The circuit carrying means are supported on their edges and have contact lands in the vicinity of, or at, the edges to provide for interconnecting circuitry. The circuit carrying means are supported by supporting means which include slots to provide a path for interconnection wiring to contact the lands of the circuit carrying means. Further interconnecting wiring may take the form of integrated circuit wiring on the reverse side of the supporting means. The low heat dissipation of the superconductive circuitry allows the circuit carrying means to be spaced approximately no less than 30 mils apart. The three dimensional arrangement provides lower random propagation delays than would a planar array of circuits

  8. Economic and environmental benefits of interconnected systems. The Spanish example

    International Nuclear Information System (INIS)

    Chicharro, A.S.; Dios Alija, R. de

    1996-01-01

    The interconnected systems provide large technical and economic benefits which, evaluated and contrasted with the associated network investment cost, usually produce important net savings. There are continental electrical systems formed by many interconnected subsystems. The optimal size of an interconnection should be defined within an economic background. It is necessary to take into account the global environmental effects. The approach and results of studies carried out by Red Electrica is presented, in order to analyse both economic and environmental benefits resulting from an increase in the present Spanish interconnection capacities. From both economic and environmental points of view, the development of the interconnected systems is highly positive. (author)

  9. Basic opto-electronics on silicon for sensor applications

    NARCIS (Netherlands)

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  10. Cellular structures with interconnected microchannels

    Science.gov (United States)

    Shaefer, Robert Shahram; Ghoniem, Nasr M.; Williams, Brian

    2018-01-30

    A method for fabricating a cellular tritium breeder component includes obtaining a reticulated carbon foam skeleton comprising a network of interconnected ligaments. The foam skeleton is then melt-infiltrated with a tritium breeder material, for example, lithium zirconate or lithium titanate. The foam skeleton is then removed to define a cellular breeder component having a network of interconnected tritium purge channels. In an embodiment the ligaments of the foam skeleton are enlarged by adding carbon using chemical vapor infiltration (CVI) prior to melt-infiltration. In an embodiment the foam skeleton is coated with a refractory material, for example, tungsten, prior to melt infiltration.

  11. Research and development of photovoltaic power system. Study of carrier dynamics in a-Si from optical and optoelectronic properties; Taiyoko hatsuden system no kenky kaihatsu. Amorphous silicon no koden tokusei to sono carrier dynamics no kogakuteki kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Hamakawa, K [Osaka University, Osaka (Japan). Faculty of Engineering Science

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on an optical study of optoelectronic properties of amorphous silicon and its carrier dynamics. Studies have been performed on elucidation of the optoelectronic conversion mechanism in an a-Si film p-i-n junction system and the relationship of the mechanism with the optoelectronic properties. In the studies, optically induced defect level distribution was evaluated by using the modulated optical current spectroscopy, and confirmation was made on model forecast and qualitative agreement, such as large increase in neutral defect levels in association with beam irradiation. In research on elucidation of a film forming mechanism for a-Si based alloys, and material property control, a high-sensitivity reflective infrared spectroscopy was used to observe mechanisms such as treatments and processes given in device fabrication. In research on optical and optoelectronic properties of an s-Si alloy thin film by using the modulated spectroscopy, a new evaluation technology dealing with amorphous semiconductors was developed. The technology separately evaluates carrier migration factors of electrons and holes by combining polarization angle dependence of electro-absorption signals with hole migration measurements. 4 figs.

  12. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2012-10-30

    ... Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Institution... certain optoelectronic devices for fiber optic communications, components thereof, and products containing... optoelectronic devices for fiber optic communications, components thereof, and products containing the same that...

  13. Interconnectivity: Benefits and Challenges

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2010-09-15

    Access to affordable and reliable electricity supplies is a basic prerequisite for economic and social development, prosperity, health, education and all other aspects of modern society. Electricity can be generated both near and far from the consumption areas as transmission lines, grid interconnections and distribution systems can transport it to the final consumer. In the vast majority of countries, the electricity sector used to be owned and run by the state. The wave of privatisation and market introduction in a number of countries and regions which started in the late 1980's has in many cases involved unbundling of generation from transmission and distribution (T and D). This has nearly everywhere exposed transmission bottlenecks limiting the development of well-functioning markets. Transmission on average accounts for about 10-15% of total final kWh cost paid by the end-user but it is becoming a key issue for effective operation of liberalised markets and for their further development. An integrated and adequate transmission infrastructure is of utmost importance for ensuring the delivery of the most competitively priced electricity, including externalities, to customers, both near and far from the power generating facilities. In this report, the role of interconnectivity in the development of energy systems is examined with the associated socio-economic, environmental, financial and regulatory aspects that must be taken into account for successful interconnection projects.

  14. Cross-border versus cross-sector interconnectivity in renewable energy systems

    International Nuclear Information System (INIS)

    Thellufsen, Jakob Zinck; Lund, Henrik

    2017-01-01

    In the transition to renewable energy systems, fluctuating renewable energy, such as wind and solar power, plays a large and important role. This creates a challenge in terms of meeting demands, as the energy production fluctuates based on weather patterns. To utilise high amounts of fluctuating renewable energy, the energy system has to be more flexible in terms of decoupling demand and production. This paper investigates two potential ways to increase flexibility. The first is the interconnection between energy systems, for instance between two countries, labelled as cross-border interconnection, and the second is cross-sector interconnection, i.e., the integration between different parts of an energy system, for instance heat and electricity. This paper seeks to compare the types of interconnectivity and discuss to which extent they are mutually beneficial. To do this, the study investigates two energy systems that represent Northern and Southern Europe. Both systems go through three developmental steps that increase the cross-sector interconnectivity. At each developmental step an increasing level of transmission capacities is examined to identify the benefits of cross-border interconnectivity. The results show that while both measures increase the system utilisation of renewable energy and the system efficiency, the cross-sector interconnection gives the best system performance. To analyse the possible interaction between cross-sector and cross-border interconnectivity, two main aspects have to be clarified. The first part defines the approach and the second is the construction of the two archetypes. - Highlights: • A method to investigate system integration and system interconnection is suggested. • The implementation is investigated across a Northern and Southern energy system. • The study identifies benefits of system integration and system interconnection. • The performance of the energy system benefits most from system integration.

  15. Fuel cell electrode interconnect contact material encapsulation and method

    Science.gov (United States)

    Derose, Anthony J.; Haltiner, Jr., Karl J.; Gudyka, Russell A.; Bonadies, Joseph V.; Silvis, Thomas W.

    2016-05-31

    A fuel cell stack includes a plurality of fuel cell cassettes each including a fuel cell with an anode and a cathode. Each fuel cell cassette also includes an electrode interconnect adjacent to the anode or the cathode for providing electrical communication between an adjacent fuel cell cassette and the anode or the cathode. The interconnect includes a plurality of electrode interconnect protrusions defining a flow passage along the anode or the cathode for communicating oxidant or fuel to the anode or the cathode. An electrically conductive material is disposed between at least one of the electrode interconnect protrusions and the anode or the cathode in order to provide a stable electrical contact between the electrode interconnect and the anode or cathode. An encapsulating arrangement segregates the electrically conductive material from the flow passage thereby, preventing volatilization of the electrically conductive material in use of the fuel cell stack.

  16. Electrode and interconnect for miniature fuel cells using direct methanol feed

    Science.gov (United States)

    Narayanan, Sekharipuram R. (Inventor); Valdez, Thomas I. (Inventor); Clara, Filiberto (Inventor)

    2004-01-01

    An improved system for interconnects in a fuel cell. In one embodiment, the membranes are located in parallel with one another, and current flow between them is facilitated by interconnects. In another embodiment, all of the current flow is through the interconnects which are located on the membranes. The interconnects are located between two electrodes.

  17. Current Solutions: Recent Experience in Interconnecting Distributed Energy Resources

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, M.

    2003-09-01

    This report catalogues selected real-world technical experiences of utilities and customers that have interconnected distributed energy assets with the electric grid. This study was initiated to assess the actual technical practices for interconnecting distributed generation and had a particular focus on the technical issues covered under the Institute of Electrical and Electronics Engineers (IEEE) 1547(TM) Standard for Interconnecting Distributed Resources With Electric Power Systems.

  18. RapidIO as a multi-purpose interconnect

    Science.gov (United States)

    Baymani, Simaolhoda; Alexopoulos, Konstantinos; Valat, Sébastien

    2017-10-01

    RapidIO (http://rapidio.org/) technology is a packet-switched high-performance fabric, which has been under active development since 1997. Originally meant to be a front side bus, it developed into a system level interconnect which is today used in all 4G/LTE base stations world wide. RapidIO is often used in embedded systems that require high reliability, low latency and scalability in a heterogeneous environment - features that are highly interesting for several use cases, such as data analytics and data acquisition (DAQ) networks. We will present the results of evaluating RapidIO in a data analytics environment, from setup to benchmark. Specifically, we will share the experience of running ROOT and Hadoop on top of RapidIO. To demonstrate the multi-purpose characteristics of RapidIO, we will also present the results of investigating RapidIO as a technology for high-speed DAQ networks using a generic multi-protocol event-building emulation tool. In addition we will present lessons learned from implementing native ports of CERN applications to RapidIO.

  19. Terahertz optoelectronics with surface plasmon polariton diode.

    Science.gov (United States)

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  20. 6th conference on Advances in Optoelectronics and Micro/nano-optics

    International Nuclear Information System (INIS)

    2017-01-01

    The 6th Conference on Advances in Optoelectronics and Micro/nano-optics (AOM 2017) Nanjing, China April 23 - 26, 2017 Conference Co-Chairs: Yiping Cui - Southeast University, China Xiaocong Yuan - Shenzhen University, China Shining Zhu - Nanjing University, China WELCOME Journal of physics: Conference Series is publishing a volume of conference proceedings that contains a selection of papers presented at the 6 th Conference on Advances in Optoelectronics and Micro/nano-optics (AOM 2017), which is an OSA topical meeting that started in 2009. AOM 2017, organized by The Optical Society of America, Southeast University, and Jiangsu Optical Society, was successfully held at Nanjing, China from April 23 th -26 th , 2017. It aims to bring together leading academic scientists, researchers and scholars to exchange and share their experience and research results on all aspects of optoelectronics and micro/nano-optics, and to discuss the practical challenges encountered and the solutions adopted. Located in Yangtze River Delta area and the center of east China, Nanjing is the capital of Jiangsu province and the second largest city in the east China region, turned out to be an ideal meeting place for domestic and overseas participants of this international conference. The conference program included plenary talks, invited talks, oral and poster contributions. From numerous submissions, 64 of the most promising and IOP-relevant contributions were included in this volume. The submissions present original ideas or results of general significance, supported by clear reasoning, compelling evidence relevant to the research. The authors state clearly the problems and the significance of their research to theory and practice. Being a successful conference, this event gathered more than 300 qualified and high-level researchers and experts, which created a good platform for worldwide researchers and engineers to enjoy the academic communication. Taking advantage of this opportunity, we

  1. Optoelectronic properties of higher acenes, their BN analogue and substituted derivatives

    International Nuclear Information System (INIS)

    Armaković, Stevan; Armaković, Sanja J.; Holodkov, Vladimir; Pelemiš, Svetlana

    2016-01-01

    We have investigated optoelectronic properties of higher acenes: pentacene, hexacene, heptacene, octacene, nonacene, decacene and their boron-nitride (BN) analogues, within the framework of density functional theory (DFT). We have also investigated the optoelectronic properties of acenes modified by BN substitution. Calculated optoelectronic properties encompasses: oxidation and reduction potentials, electron and hole reorganization energies and energy difference between excited first singlet and triplet states ΔE(S_1−T_1). Oxidation and reduction potentials indicate significantly better stability of BN analogues, comparing with their all-carbon relatives. Although higher acenes possess lower electron and hole reorganization energies, with both best values much lower than 0.1 eV, their BN analogues also have competitive values of reorganization energies, especially for holes for which reorganization energy is also lower than 0.1 eV. On the other hand ΔE(S_1−T_1) is much better for BN analogues, having values that indicate that BN analogues are possible applicable for thermally activated delayed fluorescence. - Highlights: • Optoelectronic properties of structures based on higher acenes have been investigated. • Oxidation and reduction potentials together with reorganization energies are calculated. • TADF is analyzed through calculation of ΔE(S_1−T_1), which is much better for BN analogues. • Reorganization energies of acenes improve with the increase of number of benzene rings.

  2. Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

    Science.gov (United States)

    Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua

    2018-06-21

    Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

  3. Signal Integrity Analysis in Single and Bundled Carbon Nanotube Interconnects

    International Nuclear Information System (INIS)

    Majumder, M.K.; Pandya, N.D.; Kaushik, B.K.; Manhas, S.K.

    2013-01-01

    Carbon nanotube (CN T) can be considered as an emerging interconnect material in current nano scale regime. They are more promising than other interconnect materials such as Al or Cu because of their robustness to electromigration. This research paper aims to address the crosstalk-related issues (signal integrity) in interconnect lines. Different analytical models of single- (SWCNT), double- (DWCNT), and multiwalled CNTs (MWCNT) are studied to analyze the crosstalk delay at global interconnect lengths. A capacitively coupled three-line bus architecture employing CMOS driver is used for accurate estimation of crosstalk delay. Each line in bus architecture is represented with the equivalent RLC models of single and bundled SWCNT, DWCNT, and MWCNT interconnects. Crosstalk delay is observed at middle line (victim) when it switches in opposite direction with respect to the other two lines (aggressors). Using the data predicted by ITRS 2012, a comparative analysis on the basis of crosstalk delay is performed for bundled SWCNT/DWCNT and single MWCNT interconnects. It is observed that the overall crosstalk delay is improved by 40.92% and 21.37% for single MWCNT in comparison to bundled SWCNT and bundled DWCNT interconnects, respectively.

  4. The effect of long-distance interconnection on wind power variability

    International Nuclear Information System (INIS)

    Fertig, Emily; Apt, Jay; Jaramillo, Paulina; Katzenstein, Warren

    2012-01-01

    We use time- and frequency-domain techniques to quantify the extent to which long-distance interconnection of wind plants in the United States would reduce the variability of wind power output. Previous work has shown that interconnection of just a few wind plants across moderate distances could greatly reduce the ratio of fast- to slow-ramping generators in the balancing portfolio. We find that interconnection of aggregate regional wind plants would not reduce this ratio further but would reduce variability at all frequencies examined. Further, interconnection of just a few wind plants reduces the average hourly change in power output, but interconnection across regions provides little further reduction. Interconnection also reduces the magnitude of low-probability step changes and doubles firm power output (capacity available at least 92% of the time) compared with a single region. First-order analysis indicates that balancing wind and providing firm power with local natural gas turbines would be more cost-effective than with transmission interconnection. For net load, increased wind capacity would require more balancing resources but in the same proportions by frequency as currently, justifying the practice of treating wind as negative load. (letter)

  5. Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates

    International Nuclear Information System (INIS)

    Byun, Kwangsub; Cho, Kyoungah; Kim, Sangsig

    2010-01-01

    The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.

  6. Cost based interconnection charges as a way to induce competition

    DEFF Research Database (Denmark)

    Falch, Morten

    The objective of this paper is to analyse the relationship between regulation of interconnection charges and the level of competition. One of the most important issues in the debate on interconnect regulation has been use of forward looking costs for setting of interconnection charges. This debat...... has been ongoing within the EU as well as in US. This paper discusses the European experiences and in particular the Danish experiences with use of cost based interconnection charges, and their impact on competition in the telecom market....

  7. Cross-border versus cross-sector interconnectivity in renewable energy systems

    DEFF Research Database (Denmark)

    Thellufsen, Jakob Zinck; Lund, Henrik

    2017-01-01

    renewable energy, the energy system has to be more flexible in terms of decoupling demand and production. This paper investigates two potential ways to increase flexibility. The first is the interconnection between energy systems, for instance between two countries, labelled as cross-border interconnection...... systems that represent Northern and Southern Europe. Both systems go through three developmental steps that increase the cross-sector interconnectivity. At each developmental step an increasing level of transmission capacities is examined to identify the benefits of cross-border interconnectivity...

  8. Analysis of interconnecting energy systems over a synchronized life cycle

    International Nuclear Information System (INIS)

    Nian, Victor

    2016-01-01

    Highlights: • A methodology is developed for evaluating a life cycle of interconnected systems. • A new concept of partial temporal boundary is introduced via quantitative formulation. • The interconnecting systems are synchronized through the partial temporal boundary. • A case study on the life cycle of the coal–uranium system is developed. - Abstract: Life cycle analysis (LCA) using the process chain analysis (PCA) approach has been widely applied to energy systems. When applied to an individual energy system, such as coal or nuclear electricity generation, an LCA–PCA methodology can yield relatively accurate results with its detailed process representation based on engineering data. However, there are fundamental issues when applying conventional LCA–PCA methodology to a more complex life cycle, namely, a synchronized life cycle of interconnected energy systems. A synchronized life cycle of interconnected energy systems is established through direct interconnections among the processes of different energy systems, and all interconnecting systems are bounded within the same timeframe. Under such a life cycle formation, there are some major complications when applying conventional LCA–PCA methodology to evaluate the interconnecting energy systems. Essentially, the conventional system and boundary formulations developed for a life cycle of individual energy system cannot be directly applied to a life cycle of interconnected energy systems. To address these inherent issues, a new LCA–PCA methodology is presented in this paper, in which a new concept of partial temporal boundary is introduced to synchronize the interconnecting energy systems. The importance and advantages of these new developments are demonstrated through a case study on the life cycle of the coal–uranium system.

  9. Development of a thin film solar cell interconnect for the PowerSphere concept

    International Nuclear Information System (INIS)

    Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig H.; Lin, John K.; Scarborough, Stephen E.; Curtis, Henry B.; Kerslake, Thomas W.; Peterson, Todd T.

    2005-01-01

    Progressive development of microsatellite technologies has resulted in increased demand for lightweight electrical power subsystems including solar arrays. The use of thin film photovoltaics has been recognized as a key solution to meet the power needs. The lightweight cells can generate sufficient power and still meet critical mass requirements. Commercially available solar cells produced on lightweight substrates are being studied as an option to fulfill the power needs. The commercially available solar cells are relatively inexpensive and have a high payoff potential. Commercially available thin film solar cells are primarily being produced for terrestrial applications. The need to convert the solar cell from a terrestrial to a space compatible application is the primary challenge. Solar cell contacts, grids and interconnects need to be designed to be atomic oxygen resistant and withstand rapid thermal cycling environments. A mechanically robust solar cell interconnect is also required in order to withstand handling during fabrication and survive during launch. The need to produce the solar cell interconnects has been identified as a primary goal of the PowerSphere program and is the topic of this paper. Details of the trade study leading to the final design involving the solar cell wrap around contact, flex blanket, welding process, and frame will be presented at the conference

  10. Interconnecting with VIPs

    Science.gov (United States)

    Collins, Robert

    2013-01-01

    Interconnectedness changes lives. It can even save lives. Recently the author got to witness and be part of something in his role as a teacher of primary science that has changed lives: it may even have saved lives. It involved primary science teaching--and the climate. Robert Collins describes how it is all interconnected. The "Toilet…

  11. On-chip photonic interconnects a computer architect's perspective

    CERN Document Server

    Nitta, Christopher J; Akella, Venkatesh

    2013-01-01

    As the number of cores on a chip continues to climb, architects will need to address both bandwidth and power consumption issues related to the interconnection network. Electrical interconnects are not likely to scale well to a large number of processors for energy efficiency reasons, and the problem is compounded by the fact that there is a fixed total power budget for a die, dictated by the amount of heat that can be dissipated without special (and expensive) cooling and packaging techniques. Thus, there is a need to seek alternatives to electrical signaling for on-chip interconnection appli

  12. Location constrained resource interconnection

    International Nuclear Information System (INIS)

    Hawkins, D.

    2008-01-01

    This presentation discussed issues related to wind integration from the perspective of the California Independent System Operator (ISO). Issues related to transmission, reliability, and forecasting were reviewed. Renewable energy sources currently used by the ISO were listed, and details of a new transmission financing plan designed to address the location constraints of renewable energy sources and provide for new transmission infrastructure was presented. The financing mechanism will be financed by participating transmission owners through revenue requirements. New transmission interconnections will include network facilities and generator tie-lines. Tariff revisions have also been implemented to recover the costs of new facilities and generators. The new transmission project will permit wholesale transmission access to areas where there are significant energy resources that are not transportable. A rate impact cap of 15 per cent will be imposed on transmission owners to mitigate short-term costs to ratepayers. The presentation also outlined energy resource area designation plans, renewable energy forecasts, and new wind technologies. Ramping issues were also discussed. It was concluded that the ISO expects to ensure that 20 per cent of its energy will be derived from renewable energy sources. tabs., figs

  13. DARPA Perspectives on Multifunctional Materials/Power and Energy

    Science.gov (United States)

    2012-08-09

    In-situ growth of aligned CNTs Electronics Graphene /Metal oxide CMOS interconnects Erosion Diamond/ZnS LWIR missile domes Tribology TiN/Carbon...application Optoelectronics InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel...InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel Tribology TiN/High speed

  14. Value of Improved Wind Power Forecasting in the Western Interconnection (Poster)

    Energy Technology Data Exchange (ETDEWEB)

    Hodge, B.

    2013-12-01

    Wind power forecasting is a necessary and important technology for incorporating wind power into the unit commitment and dispatch process. It is expected to become increasingly important with higher renewable energy penetration rates and progress toward the smart grid. There is consensus that wind power forecasting can help utility operations with increasing wind power penetration; however, there is far from a consensus about the economic value of improved forecasts. This work explores the value of improved wind power forecasting in the Western Interconnection of the United States.

  15. Analytical Model based on Green Criteria for Optical Backbone Network Interconnection

    DEFF Research Database (Denmark)

    Gutierrez Lopez, Jose Manuel; Riaz, M. Tahir; Pedersen, Jens Myrup

    2011-01-01

    Key terms such as Global warming, Green House Gas emissions, or Energy efficiency are currently on the scope of scientific research. Regarding telecommunications networks, wireless applications, routing protocols, etc. are being designed following this new “Green” trend. This work contributes...... to the evaluation of the environmental impact of networks from physical interconnection point of view. Networks deployment, usage, and disposal are analyzed as contributing elements to ICT’s (Information and Communications Technology) CO2 emissions. This paper presents an analytical model for evaluating...

  16. 14 CFR 29.957 - Flow between interconnected tanks.

    Science.gov (United States)

    2010-01-01

    ... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System § 29.957 Flow between interconnected tanks. (a) Where tank outlets are interconnected and allow fuel to flow between them due to gravity or flight accelerations, it must be impossible for fuel to flow between tanks in...

  17. Optoelectronic properties of higher acenes, their BN analogue and substituted derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Armaković, Stevan, E-mail: stevan.armakovic@df.uns.ac.rs [University of Novi Sad, Faculty of Sciences, Department of Physics, Trg Dositeja Obradovića 4, 21000, Novi Sad (Serbia); Armaković, Sanja J. [University of Novi Sad, Faculty of Sciences, Department of Chemistry, Biochemistry and Environmental Protection, Trg Dositeja Obradovića 3, 21000, Novi Sad (Serbia); Holodkov, Vladimir [Educons University, Faculty of Sport and Tourism - TIMS, Radnička 30a, 21000, Novi Sad (Serbia); Pelemiš, Svetlana [University of East Sarajevo, Faculty of Technology, Karakaj bb, 75400, Zvornik, Republic of Srpska, Bosnia and Herzegovina (Bosnia and Herzegovina)

    2016-02-15

    We have investigated optoelectronic properties of higher acenes: pentacene, hexacene, heptacene, octacene, nonacene, decacene and their boron-nitride (BN) analogues, within the framework of density functional theory (DFT). We have also investigated the optoelectronic properties of acenes modified by BN substitution. Calculated optoelectronic properties encompasses: oxidation and reduction potentials, electron and hole reorganization energies and energy difference between excited first singlet and triplet states ΔE(S{sub 1}−T{sub 1}). Oxidation and reduction potentials indicate significantly better stability of BN analogues, comparing with their all-carbon relatives. Although higher acenes possess lower electron and hole reorganization energies, with both best values much lower than 0.1 eV, their BN analogues also have competitive values of reorganization energies, especially for holes for which reorganization energy is also lower than 0.1 eV. On the other hand ΔE(S{sub 1}−T{sub 1}) is much better for BN analogues, having values that indicate that BN analogues are possible applicable for thermally activated delayed fluorescence. - Highlights: • Optoelectronic properties of structures based on higher acenes have been investigated. • Oxidation and reduction potentials together with reorganization energies are calculated. • TADF is analyzed through calculation of ΔE(S{sub 1}−T{sub 1}), which is much better for BN analogues. • Reorganization energies of acenes improve with the increase of number of benzene rings.

  18. Capacity-oriented curriculum system of optoelectronics in the context of large category cultivation

    Science.gov (United States)

    Luo, Yuan; Hu, Zhangfang; Zhang, Yi

    2017-08-01

    In order to cultivate the innovative talents with the comprehensive development to meet the talents demand for development of economic society, Chongqing University of Posts and Telecommunications implements cultivation based on broadening basic education and enrolment in large category of general education. Optoelectronic information science and engineering major belongs to the electronic engineering category. The "2 +2" mode is utilized for personnel training, where students are without major in the first and second year and assigned to a major within the major categories in the end of the second year. In the context of the comprehensive cultivation, for the changes in the demand for professionals in the global competitive environment with the currently rapid development, especially the demand for the professional engineering technology personnel suitable to industry and development of local economic society, the concept of CDIO engineering ability cultivation is used for reference. Thus the curriculum system for the three-node structure optoelectronic information science and engineering major is proposed, which attaches great importance to engineering practice and innovation cultivation under the background of the comprehensive cultivation. The conformity between the curriculum system and the personnel training objectives is guaranteed effectively, and the consistency between the teaching philosophy and the teaching behavior is enhanced. Therefore, the idea of major construction is clear with specific characteristics.

  19. Transferable, conductive TiO{sub 2} nanotube membranes for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Guohua [School of Energy and Environment, Anhui University of Technology, Maanshan 243002 (China); Department of Micro and Nano Systems Technology, Vestfold University College, Horten 3184 (Norway); Chen, Ting [School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275 (China); Sun, Yunlan; Chen, Guang [School of Energy and Environment, Anhui University of Technology, Maanshan 243002 (China); Wang, Kaiying, E-mail: Kaiying.Wang@hbv.no [Department of Micro and Nano Systems Technology, Vestfold University College, Horten 3184 (Norway)

    2014-08-30

    Graphical abstract: An optoelectronic device with vertical architecture offers straight conducting filaments for electron transportation. - Highlights: • Highly porous TiO{sub 2} nanotube membranes are prepared by two-step anodization. • An optoelectronic device is integrated with photocurrent transportation along the nanotube axial. • Straight conducting nano-filaments are beneficial for electron transportation. • Photoconductive performances are demonstrated under front/back-illumination. - Abstract: We report a facile approach for preparing free-standing and crystalline TiO{sub 2} nanotube membranes (TNMs) by taking advantage of differential mechanical stress between two anodic layers. The membrane exhibits visible light transmittance (∼40%) and UV absorption (∼99%) with good flexibility, which is favorable to integrate with substrates in optoelectronics. A sandwich-type device is assembled through stacking the membrane and substrates. The dependence of current-perpendicular-to-membrane vs applied voltage shows a remarkable photoconductive performance for both front and back illumination. The photocurrent value increases ∼2 or 3 orders magnitude under UV light radiation as compared to that in darkness. The photoresponse is arisen from high internal gain caused by hole trapping along the nanotube walls. This work is crucial for understanding intrinsic optical properties of nanostructured membranes.

  20. Architecture for on-die interconnect

    Science.gov (United States)

    Khare, Surhud; More, Ankit; Somasekhar, Dinesh; Dunning, David S.

    2016-03-15

    In an embodiment, an apparatus includes: a plurality of islands configured on a semiconductor die, each of the plurality of islands having a plurality of cores; and a plurality of network switches configured on the semiconductor die and each associated with one of the plurality of islands, where each network switch includes a plurality of output ports, a first set of the output ports are each to couple to the associated network switch of an island via a point-to-point interconnect and a second set of the output ports are each to couple to the associated network switches of a plurality of islands via a point-to-multipoint interconnect. Other embodiments are described and claimed.

  1. Flexible Synthetic Semiconductor Applied in Optoelectronic Organic Sensor

    Directory of Open Access Journals (Sweden)

    Andre F. S. Guedes

    2017-06-01

    Full Text Available The synthesis and application of new nanostructured organic materials, for the development of technology based on organic devices, have taken great interest from the scientific community. The greatest interest in studying organic semiconductor materials has been connected to its already known potential applications, such as: batteries, organic solar cells, flexible organic solar cells, organic light emitting diodes, organic sensors and others. Phototherapy makes use of different radiation sources, and the treatment of hyperbilirubinemia the most common therapeutic intervention occurs in the neonatal period. In this work we developed an organic optoelectronic sensor capable of detecting and determining the radiation dose rate emitted by the radiation source of neonatal phototherapy equipment. The sensors were developed using optically transparent substrate with Nanostructured thin film layers of Poly(9-Vinylcarbazole covered by a layer of Poly(P-Phenylene Vinylene. The samples were characterized by UV-Vis Spectroscopy, Electrical Measurements and SEM. With the results obtained from this study can be developed dosimeters organics to the neonatal phototherapy equipment.

  2. Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

    International Nuclear Information System (INIS)

    Chiodarelli, Nicolo'; Li, Yunlong; Arstila, Kai; Richard, Olivier; Cott, Daire J; Heyns, Marc; De Gendt, Stefan; Groeseneken, Guido; Vereecken, Philippe M; Masahito, Sugiura; Kashiwagi, Yusaku

    2011-01-01

    Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper based interconnects, though, CNT must fulfil their promise of also providing low electrical resistance in integrated structures using scalable integration processes fully compatible with silicon technology. Hence, carefully engineered growth and integration solutions are required before we can fully exploit their potentialities. This work tackles the problem of optimizing a CNT integration process from the electrical perspective. The technique of measuring the CNT resistance as a function of the CNT length is here extended to CNT integrated in vertical contacts. This allows extracting the linear resistivity and the contact resistance of the CNT, two parameters to our knowledge never reported separately for vertical CNT contacts and which are of utmost importance, as they respectively measure the quality of the CNT and that of their metal contacts. The technique proposed allows electrically distinguishing the impact of each processing step individually on the CNT resistivity and the CNT contact resistance. Hence it constitutes a powerful technique for optimizing the process and developing CNT contacts of superior quality. This can be of relevant technological importance not only for interconnects but also for all those applications that rely on the electrical properties of CNT grown with a catalytic chemical vapor deposition method at low temperature.

  3. The Enhanced Segment Interconnect for FASTBUS data communications

    International Nuclear Information System (INIS)

    Machen, D.R.; Downing, R.W.; Kirsten, F.A.; Nelson, R.O.

    1987-01-01

    The Enhanced Segment Interconnect concept (ESI) for improved FASTBUS data communications is a development supported by the U.S. Department of Energy under the Small Business Innovation Research (SBIR) program. The ESI will contain both the Segment Interconnect (SI) Tyhpe S-1 and an optional buffered interconnect for store-and-forward data communications; fiber-optic-coupled serial ports will provide optional data paths. The ESI can be applied in large FASTBUS-implemented physics experiments whose data-set or data-transmission distance requirements dictate alternate approaches to data communications. This paper describes the functions of the ESI and the status of its development, now 25% complete

  4. Electron microscopy study of advanced heterostructures for optoelectronics

    NARCIS (Netherlands)

    Katcki, J.; Ratajczak, J.; Phillipp, F.; Muszalski, J.; Bugajski, M.; Chen, J.X.; Fiore, A.

    2003-01-01

    The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots,

  5. National Offshore Wind Energy Grid Interconnection Study Executive Summary

    Energy Technology Data Exchange (ETDEWEB)

    Daniel, John P. [ABB, Inc., Cary, NC (United States); Liu, Shu [ABB, Inc., Cary, NC (United States); Ibanez, Eduardo [National Renewable Energy Lab. (NREL), Golden, CO (United States); Pennock, Ken [AWS Truepower, Albany, NY (United States); Reed, Gregory [Univ. of Pittsburgh, PA (United States); Hanes, Spencer [Duke Energy, Charlotte, NC (United States)

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States.

  6. National Offshore Wind Energy Grid Interconnection Study Full Report

    Energy Technology Data Exchange (ETDEWEB)

    Daniel, John P. [ABB, Inc., Cary, NC (United States); Liu, Shu [ABB, Inc., Cary, NC (United States); Ibanez, Eduardo [National Renewable Energy Lab. (NREL), Golden, CO (United States); Pennock, Ken [AWS Truepower, Albany, NY (United States); Reed, Gregory [Univ. of Pittsburgh, PA (United States); Hanes, Spencer [Duke Energy, Charlotte, NC (United States)

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States.

  7. The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

    International Nuclear Information System (INIS)

    Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

    2016-01-01

    Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10"−"3 Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

  8. Direct Liquid Evaporation Chemical Vapor Deposition(DLE-CVD) of Nickel, Manganese and Copper-Based Thin Films for Interconnects in Three-Dimensional Microelectronic Systems

    OpenAIRE

    Li, Kecheng

    2016-01-01

    Electrical interconnects are an intrinsic part of any electronic system. These interconnects have to perform reliably under a wide range of environmental conditions and survive stresses induced from thermal, mechanical, corrosive and electrical factors. Semiconductor technology is predominantly planar in nature, posing a severe limitation to the degree of device integrations into systems such as micro-processors or memories. 3D transistor FinFET (Fin type Field Effect Transistors) has been us...

  9. Noninvasive Optoelectronic Assessment of Induced Sagittal Imbalance Using the Vicon System.

    Science.gov (United States)

    Ould-Slimane, Mourad; Latrobe, Charles; Michelin, Paul; Chastan, Nathalie; Dujardin, Franck; Roussignol, Xavier; Gauthé, Rémi

    2017-06-01

    Spinal diseases often induce gait disorders with multifactorial origins such as lumbar pain, radicular pain, neurologic complications, or spinal deformities. However, radiography does not permit an analysis of spinal dynamics; therefore, sagittal balance dynamics during gait remain largely unexplored. This prospective and controlled pilot study assessed the Vicon system for detecting sagittal spinopelvic imbalance, to determine the correlations between optoelectronic and radiographic parameters. Reversible anterior sagittal imbalance was induced in 24 healthy men using a thoracolumbar corset. Radiographic, optoelectronic, and comparative analyses were conducted. Corset wearing induced significant variations in radiographic parameters indicative of imbalance; the mean C7-tilt and d/D ratio increased by 15° ± 7.4° and 359%, respectively, whereas the mean spinosacral angle decreased by 16.8° ± 8° (all P imbalance; the mean spinal angle increased by 15.4° ± 5.6° (P imbalance detected using the Vicon system. Optoelectronic C7'S1' correlated with radiographic C7-tilt and d/D ratio. Copyright © 2017 Elsevier Inc. All rights reserved.

  10. Reliability of Ceramic Column Grid Array Interconnect Packages Under Extreme Temperatures

    Science.gov (United States)

    Ramesham, Rajeshuni

    2011-01-01

    A paper describes advanced ceramic column grid array (CCGA) packaging interconnects technology test objects that were subjected to extreme temperature thermal cycles. CCGA interconnect electronic package printed wiring boards (PWBs) of polyimide were assembled, inspected nondestructively, and, subsequently, subjected to ex - treme-temperature thermal cycling to assess reliability for future deep-space, short- and long-term, extreme-temperature missions. The test hardware consisted of two CCGA717 packages with each package divided into four daisy-chained sections, for a total of eight daisy chains to be monitored. The package is 33 33 mm with a 27 27 array of 80%/20% Pb/Sn columns on a 1.27-mm pitch. The change in resistance of the daisy-chained CCGA interconnects was measured as a function of the increasing number of thermal cycles. Several catastrophic failures were observed after 137 extreme-temperature thermal cycles, as per electrical resistance measurements, and then the tests were continued through 1,058 thermal cycles to corroborate and understand the test results. X-ray and optical inspection have been made after thermal cycling. Optical inspections were also conducted on the CCGA vs. thermal cycles. The optical inspections were conclusive; the x-ray images were not. Process qualification and assembly is required to optimize the CCGA assembly, which is very clear from the x-rays. Six daisy chains were open out of seven daisy chains, as per experimental test data reported. The daisy chains are open during the cold cycle, and then recover during the hot cycle, though some of them also opened during the hot thermal cycle..

  11. Fusion-bonded fluidic interconnects

    NARCIS (Netherlands)

    Fazal, I.; Elwenspoek, Michael Curt

    2008-01-01

    A new approach to realize fluidic interconnects based on the fusion bonding of glass tubes with silicon is presented. Fusion bond strength analyses have been carried out. Experiments with plain silicon wafers and coated with silicon oxide and silicon nitride are performed. The obtained results are

  12. All-zigzag graphene nanoribbons for planar interconnect application

    Science.gov (United States)

    Chen, Po-An; Chiang, Meng-Hsueh; Hsu, Wei-Chou

    2017-07-01

    A feasible "lightning-shaped" zigzag graphene nanoribbon (ZGNR) structure for planar interconnects is proposed. Based on the density functional theory and non-equilibrium Green's function, the electron transport properties are evaluated. The lightning-shaped structure increases significantly the conductance of the graphene interconnect with an odd number of zigzag chains. This proposed technique can effectively utilize the linear I-V characteristic of asymmetric ZGNRs for interconnect application. Variability study accounting for width/length variation and the edge effect is also included. The transmission spectra, transmission eigenstates, and transmission pathways are analyzed to gain the physical insights. This lightning-shaped ZGNR enables all 2D material-based devices and circuits on flexible and transparent substrates.

  13. Optical interconnect for large-scale systems

    Science.gov (United States)

    Dress, William

    2013-02-01

    This paper presents a switchless, optical interconnect module that serves as a node in a network of identical distribution modules for large-scale systems. Thousands to millions of hosts or endpoints may be interconnected by a network of such modules, avoiding the need for multi-level switches. Several common network topologies are reviewed and their scaling properties assessed. The concept of message-flow routing is discussed in conjunction with the unique properties enabled by the optical distribution module where it is shown how top-down software control (global routing tables, spanning-tree algorithms) may be avoided.

  14. Cultivation of students' engineering designing ability based on optoelectronic system course project

    Science.gov (United States)

    Cao, Danhua; Wu, Yubin; Li, Jingping

    2017-08-01

    We carry out teaching based on optoelectronic related course group, aiming at junior students majored in Optoelectronic Information Science and Engineering. " Optoelectronic System Course Project " is product-designing-oriented and lasts for a whole semester. It provides a chance for students to experience the whole process of product designing, and improve their abilities to search literature, proof schemes, design and implement their schemes. In teaching process, each project topic is carefully selected and repeatedly refined to guarantee the projects with the knowledge integrity, engineering meanings and enjoyment. Moreover, we set up a top team with professional and experienced teachers, and build up learning community. Meanwhile, the communication between students and teachers as well as the interaction among students are taken seriously in order to improve their team-work ability and communicational skills. Therefore, students are not only able to have a chance to review the knowledge hierarchy of optics, electronics, and computer sciences, but also are able to improve their engineering mindset and innovation consciousness.

  15. LDRD final report: photonic analog-to-digital converter (ADC) technology; TOPICAL

    International Nuclear Information System (INIS)

    Bowers, M; Deri, B; Haigh, R; Lowry, M; Sargis, P; Stafford, R; Tong, T

    1999-01-01

    We report on an LDRD seed program of novel technology development (started by an FY98 Engineering Tech-base project) that will enable extremely high-fidelity analog-to-digital converters for a variety of national security missions. High speed (l0+ GS/s ), high precision (l0+ bits) ADC technology requires extremely short aperture times ((approx)1ps ) with very low jitter requirements (sub 10fs ). These fundamental requirements, along with other technological barriers, are difficult to realize with electronics: However, we outline here, a way to achieve these timing apertures using a novel multi-wavelength optoelectronic short-pulse optical source. Our approach uses an optoelectronic feedback scheme with high optical Q to produce an optical pulse train with ultra-low jitter ( sub 5fs) and high amplitude stability ( and lt;10(sup 10)). This approach requires low power and can be integrated into an optoelectronic integrated circuit to minimize the size. Under this seed program we have demonstrated that the optical feedback mechanism can be used to generate a high Q resonator. This has reduced the technical risk for further development, making it an attractive candidate for outside funding

  16. A model-based prognostic approach to predict interconnect failure using impedance analysis

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Dae Il; Yoon, Jeong Ah [Dept. of System Design and Control Engineering. Ulsan National Institute of Science and Technology, Ulsan (Korea, Republic of)

    2016-10-15

    The reliability of electronic assemblies is largely affected by the health of interconnects, such as solder joints, which provide mechanical, electrical and thermal connections between circuit components. During field lifecycle conditions, interconnects are often subjected to a DC open circuit, one of the most common interconnect failure modes, due to cracking. An interconnect damaged by cracking is sometimes extremely hard to detect when it is a part of a daisy-chain structure, neighboring with other healthy interconnects that have not yet cracked. This cracked interconnect may seem to provide a good electrical contact due to the compressive load applied by the neighboring healthy interconnects, but it can cause the occasional loss of electrical continuity under operational and environmental loading conditions in field applications. Thus, cracked interconnects can lead to the intermittent failure of electronic assemblies and eventually to permanent failure of the product or the system. This paper introduces a model-based prognostic approach to quantitatively detect and predict interconnect failure using impedance analysis and particle filtering. Impedance analysis was previously reported as a sensitive means of detecting incipient changes at the surface of interconnects, such as cracking, based on the continuous monitoring of RF impedance. To predict the time to failure, particle filtering was used as a prognostic approach using the Paris model to address the fatigue crack growth. To validate this approach, mechanical fatigue tests were conducted with continuous monitoring of RF impedance while degrading the solder joints under test due to fatigue cracking. The test results showed the RF impedance consistently increased as the solder joints were degraded due to the growth of cracks, and particle filtering predicted the time to failure of the interconnects similarly to their actual timesto- failure based on the early sensitivity of RF impedance.

  17. Data processing and optimization system to study prospective interstate power interconnections

    Science.gov (United States)

    Podkovalnikov, Sergei; Trofimov, Ivan; Trofimov, Leonid

    2018-01-01

    The paper presents Data processing and optimization system for studying and making rational decisions on the formation of interstate electric power interconnections, with aim to increasing effectiveness of their functioning and expansion. The technologies for building and integrating a Data processing and optimization system including an object-oriented database and a predictive mathematical model for optimizing the expansion of electric power systems ORIRES, are described. The technology of collection and pre-processing of non-structured data collected from various sources and its loading to the object-oriented database, as well as processing and presentation of information in the GIS system are described. One of the approaches of graphical visualization of the results of optimization model is considered on the example of calculating the option for expansion of the South Korean electric power grid.

  18. Nuclear physics and optoelectronics presence in industry, medicine and environment

    International Nuclear Information System (INIS)

    Robu, Maria; Peteu, Gh.

    2000-01-01

    This paper reveals applications of Nuclear Physics and Optoelectronics in numerous fields of interest in industry, medicine, environment. In the first part of the work basic elements are analyzed, among which: - the large possibilities offered by the investigation, analysis and testing techniques based on nuclear physics and optoelectronics; - the superior qualitative and quantitative characteristics of these techniques, with varied applicability in fields from industry, medicine and environment. These applications refers to: - elemental analyses of content and impurities; - non-destructive testing with X and gamma radiations; - investigations with radioactive and activable tracers in trophic chains as for instance, ground-vegetation-products-consumers-environment, including also the systemic pollution factors; - complex investigations in the interface tritium-vegetation-environment-humans; - techniques and radiopharmaceutical products for medical investigations; - determinations and automatic control for levels, density, thickness, humidity, surfaces covering; - monitoring by means of remote sensing for the evaluation of the environment, vegetation and pollution factors; - applications and production of laser and UV installations; - connections through optical fibres resistant to radiations; - imaging and medical bioengineering; - advances in X ray, laser and ultrasonic radiology; - monitoring with radiations beams. In the final part, there are presented examples of optoelectronics and nuclear physics applications in fields in industry, medicine and environment, with special stress on their basic characteristics and efficiency. (authors)

  19. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    KAUST Repository

    Botiz, Ioan; Stingelin, Natalie

    2014-01-01

    It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. © 2014 by the authors.

  20. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    Directory of Open Access Journals (Sweden)

    Ioan Botiz

    2014-03-01

    Full Text Available It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties.

  1. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    KAUST Repository

    Botiz, Ioan

    2014-03-19

    It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. © 2014 by the authors.

  2. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.; Carberry, Benjamin; Oh, Sang Ho; Myzaferi, Anisa; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    , or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates

  3. Advances in wide bandgap SiC for optoelectronics

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    2014-01-01

    Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

  4. Stability Analysis of Interconnected Fuzzy Systems Using the Fuzzy Lyapunov Method

    Directory of Open Access Journals (Sweden)

    Ken Yeh

    2010-01-01

    Full Text Available The fuzzy Lyapunov method is investigated for use with a class of interconnected fuzzy systems. The interconnected fuzzy systems consist of J interconnected fuzzy subsystems, and the stability analysis is based on Lyapunov functions. Based on traditional Lyapunov stability theory, we further propose a fuzzy Lyapunov method for the stability analysis of interconnected fuzzy systems. The fuzzy Lyapunov function is defined in fuzzy blending quadratic Lyapunov functions. Some stability conditions are derived through the use of fuzzy Lyapunov functions to ensure that the interconnected fuzzy systems are asymptotically stable. Common solutions can be obtained by solving a set of linear matrix inequalities (LMIs that are numerically feasible. Finally, simulations are performed in order to verify the effectiveness of the proposed stability conditions in this paper.

  5. Role of Wind Power in Primary Frequency Response of an Interconnection: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Y. C.; Gevorgian, V.; Ela, E.; Singhvi, V.; Pourbeik, P.

    2013-09-01

    The electrical frequency of an interconnection must be maintained very close to its nominal level at all times. Large frequency deviations can lead to unintended consequences such as load shedding, instability, and machine damage, among others. Turbine governors of conventional generating units provide primary frequency response (PFR) to ensure that frequency deviations are not significant duringlarge transient events. Increasing penetrations of variable renewable generation, such as wind and solar power, and planned retirements of conventional thermal plants - and thus a reduction in the amount of suppliers with PFR capabilities - causes concerns about a decline of PFR and system inertia in North America. The capability of inverter-coupled wind generation technologies to contribute toPFR and inertia, if appropriately equipped with the necessary control features, can help alleviate concerns. However, these responses differ from those supplied by conventional generation and inertia, and it is not entirely understood how variable renewable generation will affect the system response at different penetration levels. This paper evaluates the impact of wind generation providing PFRand synthetic inertial response on a large interconnection.

  6. Energy Zones Study: A Comprehensive Web-Based Mapping Tool to Identify and Analyze Clean Energy Zones in the Eastern Interconnection

    Energy Technology Data Exchange (ETDEWEB)

    Koritarov, V.; Kuiper, J.; Hlava, K.; Orr, A.; Rollins, K.; Brunner, D.; Green, H.; Makar, J.; Ayers, A.; Holm, M.; Simunich, K.; Wang, J.; Augustine, C.; Heimiller, D.; Hurlbut, D. J.; Milbrandt, A.; Schneider, T. R.; et al.

    2013-09-01

    This report describes the work conducted in support of the Eastern Interconnection States’ Planning Council (EISPC) Energy Zones Study and the development of the Energy Zones Mapping Tool performed by a team of experts from three National Laboratories. The multi-laboratory effort was led by Argonne National Laboratory (Argonne), in collaboration with the National Renewable Energy Laboratory (NREL) and Oak Ridge National Laboratory (ORNL). In June 2009, the U.S. Department of Energy (DOE) and the National Energy Technology Laboratory published Funding Opportunity Announcement FOA-0000068, which invited applications for interconnection-level analysis and planning. In December 2009, the Eastern Interconnection Planning Collaborative (EIPC) and the EISPC were selected as two award recipients for the Eastern Interconnection. Subsequently, in 2010, DOE issued Research Call RC-BM-2010 to DOE’s Federal Laboratories to provide research support and assistance to FOA-0000068 awardees on a variety of key subjects. Argonne was selected as the lead laboratory to provide support to EISPC in developing a methodology and a mapping tool for identifying potential clean energy zones in the Eastern Interconnection. In developing the EISPC Energy Zones Mapping Tool (EZ Mapping Tool), Argonne, NREL, and ORNL closely collaborated with the EISPC Energy Zones Work Group which coordinated the work on the Energy Zones Study. The main product of the Energy Zones Study is the EZ Mapping Tool, which is a web-based decision support system that allows users to locate areas with high suitability for clean power generation in the U.S. portion of the Eastern Interconnection. The mapping tool includes 9 clean (low- or no-carbon) energy resource categories and 29 types of clean energy technologies. The EZ Mapping Tool contains an extensive geographic information system database and allows the user to apply a flexible modeling approach for the identification and analysis of potential energy zones

  7. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Science.gov (United States)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  8. Graduate studies on optoelectronics in Argentina: an experience

    Science.gov (United States)

    Fernández, Juan C.; Garea, María. T.; Isaurralde, Silvia; Perez, Liliana I.; Raffo, Carlos A.

    2014-07-01

    The number of graduate programs in Optoelectronics in Argentina is scarce. The current Optics and Photonics Education Directory lists only three programs. One of them was launched in 2001 in the Facultad de Ingeniería (College of Engineering), Universidad de Buenos Aires (UBA). This was the first graduate program in the field, leading to a Master Degree in Optoelectronics. This decision arose from the demand of telecommunications industries and several estate- or private-funded research institutions working with us in the fields of lasers, optics, remote sensing, etc. A great bonus was the steady work, during several decades, of research groups in the College on the development of different type of lasers and optical non destructive tests and their engineering applications. As happened in many engineering graduate programs in Argentina at that time, few non full-time students could finish their studies, which called for 800 hours of traditional lecture-recitation classes, and the Master Thesis. In recent years Argentine Education authorities downsized the Master programs to 700 hours of blended learning and we redesigned the Graduate Optoelectronic Engineering Program to meet the challenge, dividing it in two successive one year programs, the first aimed at a professional training for almost immediate insertion in the labor market (called Especialización en Ingeniería Optoelectrónica), and the second (called Maestría en Ingeniería Optoelectrónica y Fotónica) aimed at a more academic and research target to comply with the UBA standards for Master degrees. The present work is a presentation of the new program design, which has begun in the current year.

  9. 75 FR 40815 - PJM Interconnection, L.L.C.; Notice of Filing

    Science.gov (United States)

    2010-07-14

    ... Interconnection, L.L.C.; Notice of Filing July 7, 2010. Take notice that on July 1, 2010, PJM Interconnection, L.L.C. (PJM) filed revised sheets to Schedule 1 of the Amended and Restated Operating Agreement of PJM Interconnection, L.L.C. (Operating Agreement) and the parallel provisions of Attachment K--Appendix of the PJM...

  10. 75 FR 22773 - PJM Interconnection, L.L.C.; Notice of Filing

    Science.gov (United States)

    2010-04-30

    ... Interconnection, L.L.C.; Notice of Filing April 23, 2010. Take notice that on April 22, 2010, PJM Interconnection, L.L.C. (PJM) filed revised tariff sheets to its Schedule 1 of the Amended and Restated Operating... (Commission) March 23, 2010 Order on Compliance Filing, PJM Interconnection, L.L.C., 130 FERC ] 61,230 (2010...

  11. 77 FR 34378 - PJM Interconnection, L.L.C.; Notice of Complaint

    Science.gov (United States)

    2012-06-11

    ... Interconnection, L.L.C.; Notice of Complaint Take notice that on June 1, 2012, pursuant to section 206 of the Federal Power Act (FPA), 16 U.S.C. 824(e), PJM Interconnection, L.L.C. (PJM) filed proposed revisions to the Amended and Restated Operating Agreement of PJM Interconnection L.L.C. (Operating Agreement) to...

  12. Opto-electronic devices from block copolymers and their oligomers.

    NARCIS (Netherlands)

    Hadziioannou, G

    1997-01-01

    This paper presents research activities towards the development of polymer materials and devices for optoelectronics, An approach to controlling the conjugation length and transferring the luminescence properties of organic molecules to polymers through black copolymers containing well-defined

  13. Circuit and interconnect design for high bit-rate applications

    NARCIS (Netherlands)

    Veenstra, H.

    2006-01-01

    This thesis presents circuit and interconnect design techniques and design flows that address the most difficult and ill-defined aspects of the design of ICs for high bit-rate applications. Bottlenecks in interconnect design, circuit design and on-chip signal distribution for high bit-rate

  14. Studies on the optoelectronic properties of the thermally evaporated tin-doped indium oxide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Ko-Ying [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Lin, Liang-Da [Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China); Chang, Li-Wei [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Shih, Han C., E-mail: hcshih@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China)

    2013-05-15

    Indium oxide (In{sub 2}O{sub 3}) nanorods, nanotowers and tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods have been fabricated by thermal evaporation. The morphology, microstructure and chemical composition of these three nanoproducts are characterized by FE-SEM, HRTEM and XPS. To further investigate the optoelectronic properties, the I–V curves and cathodoluminescence (CL) spectra are measured. The electrical resistivity of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods are 1.32 kΩ, 0.65 kΩ and 0.063 kΩ, respectively. CL spectra of these three nanoproducts clearly indicate that tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods cause a blue shift. No doubt ITO nanorods obtain the highest performance among these three nanoproducts, and this also means that Sn-doped In{sub 2}O{sub 3} nanostructures would be the best way to enhance the optoelectronic properties. Additionally, the growing mechanism and the optoelectronic properties of these three nanostructures are discussed. This study is beneficial to the applications of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods in optoelectronic nanodevices.

  15. Interconnection network architectures based on integrated orbital angular momentum emitters

    Science.gov (United States)

    Scaffardi, Mirco; Zhang, Ning; Malik, Muhammad Nouman; Lazzeri, Emma; Klitis, Charalambos; Lavery, Martin; Sorel, Marc; Bogoni, Antonella

    2018-02-01

    Novel architectures for two-layer interconnection networks based on concentric OAM emitters are presented. A scalability analysis is done in terms of devices characteristics, power budget and optical signal to noise ratio by exploiting experimentally measured parameters. The analysis shows that by exploiting optical amplifications, the proposed interconnection networks can support a number of ports higher than 100. The OAM crosstalk induced-penalty, evaluated through an experimental characterization, do not significantly affect the interconnection network performance.

  16. 3rd International Conference on Opto-Electronics and Applied Optics

    CERN Document Server

    Chakrabarti, Satyajit; Reehal, Haricharan; Lakshminarayanan, Vasudevan

    2017-01-01

    The Proceedings of 3rd International Conference on Opto-Electronics and Applied Optics, OPTRONIX 2016 is an effort to promote and present the research works by scientists and researchers including students in India and abroad in the area of Green Photonics and other related areas as well as to raise awareness about the recent trends of research and development in the area of the related fields. The book has been organized in such a way that it will be easier for the readers to go through and find out the topic of their interests. The first part includes the Keynote addresses by Rajesh Gupta, Department of Energy Science and Engineering, Indian Institute of Technology, Bombay; P.T. Ajith Kumar, President and Leading Scientist Light Logics Holography and Optics, Crescent Hill, Trivandrum, Kerala; and K.K. Ghosh, Institute of Engineering & Management, Kolkata, India.  The second part focuses on the Plenary and Invited Talks given by eminent scientists namely, Vasudevan Lakshminarayanan, University of Wate...

  17. Global On-Chip Differential Interconnects with Optimally-Placed Twists

    NARCIS (Netherlands)

    Mensink, E.; Schinkel, Daniel; Klumperink, Eric A.M.; van Tuijl, Adrianus Johannes Maria; Nauta, Bram

    2005-01-01

    Global on-chip communication is receiving quite some attention as global interconnects are rapidly becoming a speed, power and reliability bottleneck for digital CMOS systems. Recently, we proposed a bus-transceiver test chip in 0.13 μm CMOS using 10 mm long uninterrupted differential interconnects

  18. The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zubizarreta, C., E-mail: cristina.zubizarreta@tekniker.es [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); G-Berasategui, E.; Ciarsolo, I.; Barriga, J. [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); Gaspar, D.; Martins, R.; Fortunato, E. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa (Portugal)

    2016-09-01

    Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10{sup −3} Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

  19. Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

    Science.gov (United States)

    Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

    2016-03-22

    Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications.

  20. 76 FR 16405 - Notice of Attendance at PJM INterconnection, L.L.C., Meetings

    Science.gov (United States)

    2011-03-23

    ... INterconnection, L.L.C., Meetings The Federal Energy Regulatory Commission (Commission) hereby gives notice that members of the Commission and Commission staff may attend upcoming PJM Interconnection, L.L.C., (PJM...: Docket No. EL05-121, PJM Interconnection, L.L.C. Docket No. ER06-456, PJM Interconnection, L.L.C. Docket...

  1. Fixed Orientation Interconnection Problems: Theory, Algorithms and Applications

    DEFF Research Database (Denmark)

    Zachariasen, Martin

    Interconnection problems have natural applications in the design of integrated circuits (or chips). A modern chip consists of billions of transistors that are connected by metal wires on the surface of the chip. These metal wires are routed on a (fairly small) number of layers in such a way...... that electrically independent nets do not intersect each other. Traditional manufacturing technology limits the orientations of the wires to be either horizontal or vertical — and is known as Manhattan architecture. Over the last decade there has been a growing interest in general architectures, where more than two...... a significant step forward, both concerning theory and algorithms, for the fixed orientation Steiner tree problem. In addition, the work maintains a close link to applications and generalizations motivated by chip design....

  2. Time Domain Analysis of Graphene Nanoribbon Interconnects Based on Transmission Line ‎Model

    Directory of Open Access Journals (Sweden)

    S. Haji Nasiri

    2012-03-01

    Full Text Available Time domain analysis of multilayer graphene nanoribbon (MLGNR interconnects, based on ‎transmission line modeling (TLM using a six-order linear parametric expression, has been ‎presented for the first time. We have studied the effects of interconnect geometry along with ‎its contact resistance on its step response and Nyquist stability. It is shown that by increasing ‎interconnects dimensions their propagation delays are increased and accordingly the system ‎becomes relatively more stable. In addition, we have compared time responses and Nyquist ‎stabilities of MLGNR and SWCNT bundle interconnects, with the same external dimensions. ‎The results show that under the same conditions, the propagation delays for MLGNR ‎interconnects are smaller than those of SWCNT bundle interconnects are. Hence, SWCNT ‎bundle interconnects are relatively more stable than their MLGNR rivals.‎

  3. The Development of an IMU Integrated Clothes for Postural Monitoring Using Conductive Yarn and Interconnecting Technology.

    Science.gov (United States)

    Kang, Sung-Won; Choi, Hyeob; Park, Hyung-Il; Choi, Byoung-Gun; Im, Hyobin; Shin, Dongjun; Jung, Young-Giu; Lee, Jun-Young; Park, Hong-Won; Park, Sukyung; Roh, Jung-Sim

    2017-11-07

    Spinal disease is a common yet important condition that occurs because of inappropriate posture. Prevention could be achieved by continuous posture monitoring, but most measurement systems cannot be used in daily life due to factors such as burdensome wires and large sensing modules. To improve upon these weaknesses, we developed comfortable "smart wear" for posture measurement using conductive yarn for circuit patterning and a flexible printed circuit board (FPCB) for interconnections. The conductive yarn was made by twisting polyester yarn and metal filaments, and the resistance per unit length was about 0.05 Ω/cm. An embroidered circuit was made using the conductive yarn, which showed increased yield strength and uniform electrical resistance per unit length. Circuit networks of sensors and FPCBs for interconnection were integrated into clothes using a computer numerical control (CNC) embroidery process. The system was calibrated and verified by comparing the values measured by the smart wear with those measured by a motion capture camera system. Six subjects performed fixed movements and free computer work, and, with this system, we were able to measure the anterior/posterior direction tilt angle with an error of less than 4°. The smart wear does not have excessive wires, and its structure will be optimized for better posture estimation in a later study.

  4. Electromagnetism and interconnections

    CERN Document Server

    Charruau, S

    2009-01-01

    This book covers the theoretical problems of modeling electrical behavior of the interconnections encountered in everyday electronic products. The coverage shows the theoretical tools of waveform prediction at work in the design of a complex and high-speed digital electronic system. Scientists, research engineers, and postgraduate students interested in electromagnetism, microwave theory, electrical engineering, or the development of simulation tools software for high speed electronic system design automation will find this book an illuminating resource.

  5. Optoelectronic pH Meter: Further Details

    Science.gov (United States)

    Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

    2009-01-01

    A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

  6. Electronic interconnects and devices with topological surface states and methods for fabricating same

    Science.gov (United States)

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2016-05-03

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  7. Electronic interconnects and devices with topological surface states and methods for fabricating same

    Energy Technology Data Exchange (ETDEWEB)

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2017-04-04

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  8. CAISSON: Interconnect Network Simulator

    Science.gov (United States)

    Springer, Paul L.

    2006-01-01

    Cray response to HPCS initiative. Model future petaflop computer interconnect. Parallel discrete event simulation techniques for large scale network simulation. Built on WarpIV engine. Run on laptop and Altix 3000. Can be sized up to 1000 simulated nodes per host node. Good parallel scaling characteristics. Flexible: multiple injectors, arbitration strategies, queue iterators, network topologies.

  9. One-step fabrication of microfluidic chips with in-plane, adhesive-free interconnections

    International Nuclear Information System (INIS)

    Sabourin, D; Dufva, M; Jensen, T; Kutter, J; Snakenborg, D

    2010-01-01

    A simple method for creating interconnections to a common microfluidic device material, poly(methyl methacrylate) (PMMA), is presented. A press-fit interconnection is created between oversized, deformable tubing and complementary, undersized semi-circular ports fabricated into PMMA bonding surfaces by direct micromilling. Upon UV-assisted bonding the tubing is trapped in the ports of the PMMA chip and forms an integrated, in-plane and adhesive-free interconnection. The interconnections support the average pressure of 6.1 bar and can be made with small dead volumes. A comparison is made to a similar interconnection approach which uses tubing to act as a gasket between a needle and port on the microfluidic chip. (technical note)

  10. Cross-border versus cross-sector interconnectivity in renewable energy systems

    DEFF Research Database (Denmark)

    Thellufsen, Jakob Zinck; Lund, Henrik

    2017-01-01

    . The results show that while both measures increase the system utilisation of renewable energy and the system efficiency, the cross-sector interconnection gives the best system performance. To analyse the possible interaction between cross-sector and cross-border interconnectivity, two main aspects have......In the transition to renewable energy systems, fluctuating renewable energy, such as wind and solar power, plays a large and important role. This creates a challenge in terms of meeting demands, as the energy production fluctuates based on weather patterns. To utilise high amounts of fluctuating...... renewable energy, the energy system has to be more flexible in terms of decoupling demand and production. This paper investigates two potential ways to increase flexibility. The first is the interconnection between energy systems, for instance between two countries, labelled as cross-border interconnection...

  11. Advanced Platform for Development and Evaluation of Grid Interconnection Systems Using Hardware-in-the-Loop: Part III - Grid Interconnection System Evaluator

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, B.; Shirazi, M.; Coddington, M.; Kroposki, B.

    2013-01-01

    This paper describes a Grid Interconnection System Evaluator (GISE) that leverages hardware-in-the-loop (HIL) simulation techniques to rapidly evaluate the grid interconnection standard conformance of an ICS according to the procedures in IEEE Std 1547.1. The architecture and test sequencing of this evaluation tool, along with a set of representative ICS test results from three different photovoltaic (PV) inverters, are presented. The GISE adds to the National Renewable Energy Laboratory's (NREL) evaluation platform that now allows for rapid development of ICS control algorithms using controller HIL (CHIL) techniques, the ability to test the dc input characteristics of PV-based ICSs through the use of a PV simulator capable of simulating real-world dynamics using power HIL (PHIL), and evaluation of ICS grid interconnection conformance.

  12. Interconnected Power Systems Mexico-Guatemala financed by BID

    International Nuclear Information System (INIS)

    Martinez, Veronica

    2003-01-01

    The article describes the plans for the interconnection of the electric power systems of Guatemala, El Salvador, Honduras, Nicaragua, Costa Rica, Panama and Mexico within the project Plan Pueba Panama. The objective of the interconnection is to create an electric market in the region that contributes to reduce costs and prices. The project will receive a financing of $37.5 millions of US dollars from the Banco Intrameramericano de Desarrollo (BID)

  13. Microcoil Spring Interconnects for Ceramic Grid Array Integrated Circuits

    Science.gov (United States)

    Strickland, S. M.; Hester, J. D.; Gowan, A. K.; Montgomery, R. K.; Geist, D. L.; Blanche, J. F.; McGuire, G. D.; Nash, T. S.

    2011-01-01

    As integrated circuit miniaturization trends continue, they drive the need for smaller higher input/output (I/O) packages. Hermetically sealed ceramic area array parts are the package of choice by the space community for high reliability space flight electronic hardware. Unfortunately, the coefficient of thermal expansion mismatch between the ceramic area array package and the epoxy glass printed wiring board limits the life of the interconnecting solder joint. This work presents the results of an investigation by Marshall Space Flight Center into a method to increase the life of this second level interconnection by the use of compliant microcoil springs. The design of the spring and its attachment process are presented along with thermal cycling results of microcoil springs (MCS) compared with state-of-the-art ball and column interconnections. Vibration testing has been conducted on MCS and high lead column parts. Radio frequency simulation and measurements have been made and the MCS has been modeled and a stress analysis performed. Thermal cycling and vibration testing have shown MCS interconnects to be significantly more reliable than solder columns. Also, MCS interconnects are less prone to handling damage than solder columns. Future work that includes shock testing, incorporation into a digital signal processor board, and process evaluation of expansion from a 400 I/O device to a device with over 1,100 I/O is identified.

  14. GaN nano-membrane for optoelectronic and electronic device applications

    KAUST Repository

    Ooi, Boon S.

    2014-01-01

    The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

  15. Robert Aymar seals the last interconnect in the LHC

    CERN Multimedia

    Maximilien Brice

    2007-01-01

    The LHC completes the circle. On 7 November, in a brief ceremony in the LHC tunnel, CERN Director General Robert Aymar (Photo 1) sealed the last interconnect between the main magnets of the Large Hadron Collider (LHC). Jean-Philippe Tock, leader of the Interconnections team, tightens the last bolt (Photos 4-8).

  16. Light box for investigation of characteristics of optoelectronics detectors

    Science.gov (United States)

    Szreder, Agnieszka; Mazikowski, Adam

    2017-09-01

    In this paper, a light box for investigation of characteristics of optoelectronic detectors is described. The light box consists of an illumination device, an optical power sensor and a mechanical enclosure. The illumination device is based on four types of high-power light emitting diodes (LED): white light, red, green and blue. The illumination level can be varied for each LED independently by the driver and is measured by optical power sensor. The mechanical enclosure provides stable mounting points for the illumination device, sensor and the examined detector and protects the system from external light, which would otherwise strongly influence the measurement results. Uniformity of illumination distribution provided by the light box for all colors is good, making the measurement results less dependent on the position of the examined detector. The response of optoelectronic detectors can be investigated using the developed light box for each LED separately or for any combination of up to four LED types. As the red, green and blue LEDs are rather narrow bandwidth sources, spectral response of different detectors can be examined for these wavelength ranges. The described light box can be used for different applications. Its primary use is in a student laboratory setup for investigation of characteristics of optoelectronic detectors. Moreover, it can also be used in various colorimetric or photographic applications. Finally, it will be used as a part of demonstrations from the fields of vision and color, performed during science fairs and outreach activities increasing awareness of optics and photonics.

  17. The variability of interconnected wind plants

    International Nuclear Information System (INIS)

    Katzenstein, Warren; Fertig, Emily; Apt, Jay

    2010-01-01

    We present the first frequency-dependent analyses of the geographic smoothing of wind power's variability, analyzing the interconnected measured output of 20 wind plants in Texas. Reductions in variability occur at frequencies corresponding to times shorter than ∼24 h and are quantified by measuring the departure from a Kolmogorov spectrum. At a frequency of 2.8x10 -4 Hz (corresponding to 1 h), an 87% reduction of the variability of a single wind plant is obtained by interconnecting 4 wind plants. Interconnecting the remaining 16 wind plants produces only an additional 8% reduction. We use step change analyses and correlation coefficients to compare our results with previous studies, finding that wind power ramps up faster than it ramps down for each of the step change intervals analyzed and that correlation between the power output of wind plants 200 km away is half that of co-located wind plants. To examine variability at very low frequencies, we estimate yearly wind energy production in the Great Plains region of the United States from automated wind observations at airports covering 36 years. The estimated wind power has significant inter-annual variability and the severity of wind drought years is estimated to be about half that observed nationally for hydroelectric power.

  18. Ultrafast characterization of optoelectronic devices and systems

    Science.gov (United States)

    Zheng, Xuemei

    The recent fast growth in high-speed electronics and optoelectronics has placed demanding requirements on testing tools. Electro-optic (EO) sampling is a well-established technique for characterization of high-speed electronic and optoelectronic devices and circuits. However, with the progress in device miniaturization, lower power consumption (smaller signal), and higher throughput (higher clock rate), EO sampling also needs to be updated, accordingly, towards better signal-to-noise ratio (SNR) and sensitivity, without speed sacrifice. In this thesis, a novel EO sampler with a single-crystal organic 4-dimethylamino-N-methy-4-stilbazolium tosylate (DAST) as the EO sensor is developed. The system exhibits sub-picosecond temporal resolution, sub-millivolt sensitivity, and a 10-fold improvement on SNR, compared with its LiTaO3 counterpart. The success is attributed to the very high EO coefficient, the very low dielectric constant, and the fast response, coming from the major contribution of the pi-electrons in DAST. With the advance of ultrafast laser technology, low-noise and compact femtosecond fiber lasers have come to maturation and become light-source options for ultrafast metrology systems. We have successfully integrated a femtosecond erbium-doped-fiber laser into an EO sampler, making the system compact and very reliable. The fact that EO sampling is essentially an impulse-response measurement process, requires integration of ultrashort (sub-picosecond) impulse generation network with the device under test. We have implemented a reliable lift-off and transfer technique in order to obtain epitaxial-quality freestanding low-temperature-grown GaAs (LT-GaAs) thin-film photo-switches, which can be integrated with many substrates. The photoresponse of our freestanding LT-GaAs devices was thoroughly characterized with the help of our EO sampler. As fast as 360 fs full-width-at-half-maximum (FWHM) and >1 V electrical pulses were obtained, with quantum efficiency

  19. Carbon nanotube based VLSI interconnects analysis and design

    CERN Document Server

    Kaushik, Brajesh Kumar

    2015-01-01

    The brief primarily focuses on the performance analysis of CNT based interconnects in current research scenario. Different CNT structures are modeled on the basis of transmission line theory. Performance comparison for different CNT structures illustrates that CNTs are more promising than Cu or other materials used in global VLSI interconnects. The brief is organized into five chapters which mainly discuss: (1) an overview of current research scenario and basics of interconnects; (2) unique crystal structures and the basics of physical properties of CNTs, and the production, purification and applications of CNTs; (3) a brief technical review, the geometry and equivalent RLC parameters for different single and bundled CNT structures; (4) a comparative analysis of crosstalk and delay for different single and bundled CNT structures; and (5) various unique mixed CNT bundle structures and their equivalent electrical models.

  20. Divergent synthesis and optoelectronic properties of oligodiacetylene building blocks

    NARCIS (Netherlands)

    Pilzak, G.S.; Lagen, van B.; Sudhölter, E.J.R.; Zuilhof, H.

    2008-01-01

    A new and divergent synthetic route to oligodiacetylene (ODA) building blocks has been developed via Sonogashira reactions under a reductive atmosphere. These central building blocks provide a new way for rapid preparation of long ODAs. In addition, we report on their optoelectronic properties which

  1. Effects of advanced process approaches on electromigration degradation of Cu on-chip interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, M.A.

    2007-07-12

    This thesis provides a methodology for the investigation of electromigration (EM) in Cu-based interconnects. An experimental framework based on in-situ scanning electron microscopy (SEM) investigations was developed for that purpose. It is capable to visualize the EM-induced void formation and evolution in multi-level test structures in real time. Different types of interconnects were investigated. Furthermore, stressed and unstressed samples were studied applying advanced physical analysis techniques in order to obtain additional information about the microstructure of the interconnects as well as interfaces and grain boundaries. These data were correlated to the observed degradation phenomena. Correlations of the experimental results to recently established theoretical models were highlighted. Three types of Cu-based interconnects were studied. Pure Cu interconnects were compared to Al-alloyed (CuAl) and CoWP-coated interconnects. The latter two represent potential approaches that address EM-related reliability concerns. It was found that in such interconnects the dominant diffusion path is no longer the Cu/capping layer interface for interconnects as in pure Cu interconnects. Instead, void nucleation occurs at the bottom Cu/barrier interface with significant effects from grain boundaries. Moreover, the in-situ investigations revealed that the initial void nucleation does not occur at the cathode end of the lines but several micrometers away from it. The mean times-to-failure of CuAl and CoWP-coated interconnects were increased by at least one order of magnitude compared to Cu interconnects. The improvements were attributed to the presence of foreign metal atoms at the Cu/capping layer interface. Post-mortem EBSD investigations were used to reveal the microstructure of the tested samples. The data were correlated to the in-situ observations. (orig.)

  2. Optical technology for microwave applications V; Proceedings of the Meeting, Orlando, FL, Apr. 3-5, 1991

    Science.gov (United States)

    Yao, Shi-Kay

    Consideration is given to light modulation technologies, wideband optical links, phased array antenna applications, radar and EW applications, and novel optoelectronic devices and technologies. Particular attention is given to wideband nonlinear optical organic external modulators, ultra-linear electrooptic modulators for microwave fiber-optic communications, coherent optical modulation for antenna remoting, a hybrid optical transmitter for microwave communication, a direct optical phase shifter for phased array systems, acoustooptic architectures for multidimensional phased-array antenna processing, generalized phased-array Bragg interaction in anisotropic crystals, analog optical processing of radio frequency signals, a wideband acoustooptic spectrometer, ring resonators for microwave optoelectronics, optical techniques for microwave monolithic circuit characterization, microwave control using a high-gain bias-free optoelectronic switch, and A/D conversion of microwave signals using a hybrid optical-electronic technique. (For individual items see A93-25727 to A93-25758)

  3. Cascade-robustness optimization of coupling preference in interconnected networks

    International Nuclear Information System (INIS)

    Zhang, Xue-Jun; Xu, Guo-Qiang; Zhu, Yan-Bo; Xia, Yong-Xiang

    2016-01-01

    Highlights: • A specific memetic algorithm was proposed to optimize coupling links. • A small toy model was investigated to examine the underlying mechanism. • The MA optimized strategy exhibits a moderate assortative pattern. • A novel coupling coefficient index was proposed to quantify coupling preference. - Abstract: Recently, the robustness of interconnected networks has attracted extensive attentions, one of which is to investigate the influence of coupling preference. In this paper, the memetic algorithm (MA) is employed to optimize the coupling links of interconnected networks. Afterwards, a comparison is made between MA optimized coupling strategy and traditional assortative, disassortative and random coupling preferences. It is found that the MA optimized coupling strategy with a moderate assortative value shows an outstanding performance against cascading failures on both synthetic scale-free interconnected networks and real-world networks. We then provide an explanation for this phenomenon from a micro-scope point of view and propose a coupling coefficient index to quantify the coupling preference. Our work is helpful for the design of robust interconnected networks.

  4. The first LHC sector is fully interconnected

    CERN Multimedia

    2006-01-01

    Sector 7-8 is the first sector of the LHC to become fully operational. All the magnets, cryogenic line, vacuum chambers and services are interconnected. The cool down of this sector can soon commence. LHC project leader Lyn Evans, the teams from CERN's AT/MCS, AT/VAC and AT/MEL groups, and the members of the IEG consortium celebrate the completion of the first LHC sector. The 10th of November was a red letter day for the LHC accelerator teams, marking the completion of the first sector of the machine. The magnets of sector 7-8, together with the cryogenic line, the vacuum chambers and the distribution feedboxes (DFBs) are now all completely interconnected. Sector 7-8 has thus been closed and is the first LHC sector to become operational. The interconnection work required several thousand electrical, cryogenic and insulating connections to be made on the 210 interfaces between the magnets in the arc, the 30 interfaces between the special magnets and the interfaces with the cryogenic line. 'This represent...

  5. System interconnection studies using WASP

    Energy Technology Data Exchange (ETDEWEB)

    Bayrak, Y [Turkish Electricity Generation and Transmission Corp., Ankara (Turkey)

    1997-09-01

    The aim of this paper is to describe the application of WASP as a modelling tool for determining the development of two electric systems with interconnections. A case study has been carried out to determine the possibilities of transfer of baseload energy between Turkey and a neighboring country. The objective of this case study is to determine the amount of energy that can be transferred, variations of Loss Probability (LOLP) and unserved energy, and the cost of additional generation with interconnection. The break-even cost will be determined to obtain the minimum charge rate at which TEAS (Turkish Electricity Generation-Transmission Corp.) needs to sell the energy in order to recover the costs. The minimum charge rate for both capacity and energy will be estimated without considering extra capacity additions, except for the ones needed by the Turkish system alone. (author). 2 figs, 3 tabs.

  6. Probabilistic interconnection between interdependent networks promotes cooperation in the public goods game

    International Nuclear Information System (INIS)

    Wang, Baokui; Chen, Xiaojie; Wang, Long

    2012-01-01

    Most previous works study the evolution of cooperation in a structured population by commonly employing an isolated single network. However, realistic systems are composed of many interdependent networks coupled with each other, rather than an isolated single one. In this paper, we consider a system including two interacting networks with the same size, entangled with each other by the introduction of probabilistic interconnections. We introduce the public goods game into such a system, and study how the probabilistic interconnection influences the evolution of cooperation of the whole system and the coupling effect between two layers of interdependent networks. Simulation results show that there exists an intermediate region of interconnection probability leading to the maximum cooperation level in the whole system. Interestingly, we find that at the optimal interconnection probability the fraction of internal links between cooperators in two layers is maximal. Also, even if initially there are no cooperators in one layer of interdependent networks, cooperation can still be promoted by probabilistic interconnection, and the cooperation levels in both layers can more easily reach an agreement at the intermediate interconnection probability. Our results may be helpful in understanding cooperative behavior in some realistic interdependent networks and thus highlight the importance of probabilistic interconnection on the evolution of cooperation. (paper)

  7. Laser diode technology and applications

    International Nuclear Information System (INIS)

    Figueroa, L.

    1989-01-01

    This book covers a wide range of semiconductor laser technology, from new laser structures and laser design to applications in communications, remote sensing, and optoelectronics. The authors report on new laser diode physics and applications and present a survey of the state of the art as well as progress in new developments

  8. The Development of an IMU Integrated Clothes for Postural Monitoring Using Conductive Yarn and Interconnecting Technology

    Directory of Open Access Journals (Sweden)

    Sung-Won Kang

    2017-11-01

    Full Text Available Spinal disease is a common yet important condition that occurs because of inappropriate posture. Prevention could be achieved by continuous posture monitoring, but most measurement systems cannot be used in daily life due to factors such as burdensome wires and large sensing modules. To improve upon these weaknesses, we developed comfortable “smart wear” for posture measurement using conductive yarn for circuit patterning and a flexible printed circuit board (FPCB for interconnections. The conductive yarn was made by twisting polyester yarn and metal filaments, and the resistance per unit length was about 0.05 Ω/cm. An embroidered circuit was made using the conductive yarn, which showed increased yield strength and uniform electrical resistance per unit length. Circuit networks of sensors and FPCBs for interconnection were integrated into clothes using a computer numerical control (CNC embroidery process. The system was calibrated and verified by comparing the values measured by the smart wear with those measured by a motion capture camera system. Six subjects performed fixed movements and free computer work, and, with this system, we were able to measure the anterior/posterior direction tilt angle with an error of less than 4°. The smart wear does not have excessive wires, and its structure will be optimized for better posture estimation in a later study.

  9. Electric network interconnection of Mashreq Arab Countries

    International Nuclear Information System (INIS)

    El-Amin, I.M.; Al-Shehri, A.M.; Opoku, G.; Al-Baiyat, S.A.; Zedan, F.M.

    1994-01-01

    Power system interconnection is a well established practice for a variety of technical and economical reasons. Several interconnected networks exist worldwide for a number of factors. Some of these networks cross international boundaries. This presentation discusses the future developments of the power systems of Mashreq Arab Countries (MAC). MAC consists of Bahrain, Egypt, Iraq, Jordan, Kuwait, Lebanon, Oman, Qatar, Saudi Arabia, United Arab Emirates (UAE), and Yemen. Mac power systems are operated by government or semigovernment bodies. Many of these countries have national or regional electric grids but are generally isolated from each other. With the exception of Saudi Arabia power systems, which employ 60 Hz, all other MAC utilities use 50 Hz frequency. Each country is served by one utility, except Saudi Arabia, which is served by four major utilities and some smaller utilities serving remote towns and small load centers. The major utilities are the Saudi Consolidated electric Company in the Eastern Province (SCECO East), SCECO Center, SCECO West, and SCECO South. These are the ones considered in this study. The energy resources in MAC are varied. Countries such as Egypt, Iraq, and Syria have significant hydro resources.The gulf countries and Iraq have abundant fossil fuel, The variation in energy resources as well as the characteristics of the electric load make it essential to look into interconnections beyond the national boundaries. Most of the existing or planned interconnections involve few power systems. A study involving 12 countries and over 20 utilities with different characteristics represents a very large scale undertaking

  10. OPTICAL correlation identification technology applied in underwater laser imaging target identification

    Science.gov (United States)

    Yao, Guang-tao; Zhang, Xiao-hui; Ge, Wei-long

    2012-01-01

    The underwater laser imaging detection is an effective method of detecting short distance target underwater as an important complement of sonar detection. With the development of underwater laser imaging technology and underwater vehicle technology, the underwater automatic target identification has gotten more and more attention, and is a research difficulty in the area of underwater optical imaging information processing. Today, underwater automatic target identification based on optical imaging is usually realized with the method of digital circuit software programming. The algorithm realization and control of this method is very flexible. However, the optical imaging information is 2D image even 3D image, the amount of imaging processing information is abundant, so the electronic hardware with pure digital algorithm will need long identification time and is hard to meet the demands of real-time identification. If adopt computer parallel processing, the identification speed can be improved, but it will increase complexity, size and power consumption. This paper attempts to apply optical correlation identification technology to realize underwater automatic target identification. The optics correlation identification technology utilizes the Fourier transform characteristic of Fourier lens which can accomplish Fourier transform of image information in the level of nanosecond, and optical space interconnection calculation has the features of parallel, high speed, large capacity and high resolution, combines the flexibility of calculation and control of digital circuit method to realize optoelectronic hybrid identification mode. We reduce theoretical formulation of correlation identification and analyze the principle of optical correlation identification, and write MATLAB simulation program. We adopt single frame image obtained in underwater range gating laser imaging to identify, and through identifying and locating the different positions of target, we can improve

  11. Growing perovskite into polymers for easy-processable optoelectronic devices

    Science.gov (United States)

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  12. Local Network Wideband Interconnection Alternatives.

    Science.gov (United States)

    1984-01-01

    signal. 3.2.2 Limitations Although satellites offer the advantages of insensitivity to distance, point-to-multipoint communication capability and...Russell, the CATV franchisee for the town of Bedford, has not yit set rates for leasing channels on their network. If this network were interconnected

  13. Copper Nanowire Production for Interconnect Applications

    Science.gov (United States)

    Han, Jin-Woo (Inventor); Meyyappan, Meyya (Inventor)

    2014-01-01

    A method of fabricating metallic Cu nanowires with lengths up to about 25 micrometers and diameters in a range 20-100 nanometers, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 micrometers), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nanometers. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).

  14. Net Metering and Interconnection Procedures-- Incorporating Best Practices

    Energy Technology Data Exchange (ETDEWEB)

    Jason Keyes, Kevin Fox, Joseph Wiedman, Staff at North Carolina Solar Center

    2009-04-01

    State utility commissions and utilities themselves are actively developing and revising their procedures for the interconnection and net metering of distributed generation. However, the procedures most often used by regulators and utilities as models have not been updated in the past three years, in which time most of the distributed solar facilities in the United States have been installed. In that period, the Interstate Renewable Energy Council (IREC) has been a participant in more than thirty state utility commission rulemakings regarding interconnection and net metering of distributed generation. With the knowledge gained from this experience, IREC has updated its model procedures to incorporate current best practices. This paper presents the most significant changes made to IREC’s model interconnection and net metering procedures.

  15. Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Wenzhuo [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Wang, Lei [Department of Electrical Engineering, Columbia University, New York NY 10027 USA; Yu, Ruomeng [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Liu, Yuanyue [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Wei, Su-Huai [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Hone, James [Department of Mechanical Engineering, Columbia University, New York NY 10027 USA; Wang, Zhong Lin [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083 Beijing China

    2016-08-03

    Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

  16. 77 FR 52766 - Technology and Trading Roundtable

    Science.gov (United States)

    2012-08-30

    ... SECURITIES AND EXCHANGE COMMISSION [Release No. 34-67725; File No. 4-652] Technology and Trading... ``Technology and Trading: Promoting Stability in Today's Markets'' to discuss ways to promote stability in..., implement, and manage complex and inter-connected trading technologies. The roundtable discussion will be...

  17. Design of optoelectronic system to meter of electrical current to the habitation house

    International Nuclear Information System (INIS)

    Camas, J.; Flores, M.; Anzuelo, G.; Garcia, C.; Juarez, N.; Torres, W.; Mota, R.

    2009-01-01

    In this work, we present an optoelectronic digital meter of electrical current. The development of this design is described step by step with diagram to blocks. The advantage over conventional meters of CFE (Comision Federal de electricidad) and the design proposed are analyzed. Information in the optoelectronic design is controlled by Microcontroller PIC16F877. This Microcontroller uses an external crystal as an oscillator with a 4 MHz frequency. The information is shown in a LCD (Liquid Crystal Display). In addition, to quantify the electrical current was necessary an interruption of light. (Author)

  18. Cross-border effects of capacity mechanisms in interconnected power systems

    NARCIS (Netherlands)

    Bhagwat, P.C.; Richstein, J.C.; Chappin, E.J.L.; Iychettira, K.K.; de Vries, L.J.

    2017-01-01

    The cross-border effects of a capacity market and a strategic reserve in interconnected electricity markets are modeled using an agent-based modeling methodology. Both capacity mechanisms improve the security of supply and reduce consumer costs. Our results indicate that interconnections do not

  19. Performance of WCN diffusion barrier for Cu multilevel interconnects

    Science.gov (United States)

    Lee, Seung Yeon; Ju, Byeong-Kwon; Kim, Yong Tae

    2018-04-01

    The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H2 gases and has a very low resistivity of 100 µΩ cm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 °C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 °C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive.

  20. Planetary Sciences, Geodynamics, Impacts, Mass Extinctions, and Evolution: Developments and Interconnections

    Directory of Open Access Journals (Sweden)

    Jaime Urrutia-Fucugauchi

    2016-01-01

    Full Text Available Research frontiers in geophysics are being expanded, with development of new fields resulting from technological advances such as the Earth observation satellite network, global positioning system, high pressure-temperature physics, tomographic methods, and big data computing. Planetary missions and enhanced exoplanets detection capabilities, with discovery of a wide range of exoplanets and multiple systems, have renewed attention to models of planetary system formation and planet’s characteristics, Earth’s interior, and geodynamics, highlighting the need to better understand the Earth system, processes, and spatio-temporal scales. Here we review the emerging interconnections resulting from advances in planetary sciences, geodynamics, high pressure-temperature physics, meteorite impacts, and mass extinctions.

  1. Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique.

    Science.gov (United States)

    Lopez-Diaz, D; Merino, C; Velázquez, M M

    2015-11-11

    Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP) and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.

  2. Sol-gel synthesized ZnO for optoelectronics applications: a characterization review

    Science.gov (United States)

    Harun, Kausar; Hussain, Fayaz; Purwanto, Agus; Sahraoui, Bouchta; Zawadzka, Anna; Azmin Mohamad, Ahmad

    2017-12-01

    The rapid growth in green technology has resulted in a marked increase in the incorporation of ZnO in energy and optoelectronic devices. Research involving ZnO is being given renewed attention in the quest to fully exploit its promising properties. The purity and state of defects in the ZnO system are optimized through several modifications to the synthesis conditions and the starting materials. These works have been verified through a series of characterizations. This review covers the essential characterization outcomes of pure ZnO nanoparticles. Emphasis is placed on recent techniques, examples and some issues concerning sol-gel synthesized ZnO nanoparticles. Thermal, phase, structural and morphological observations are combined to ascertain the level of purity of ZnO. The subsequent elemental and optical characterizations are also discussed. This review would be the collective information and suggestions at one place for investigators to focus on the best development of ZnO-based optical and energy devices.

  3. The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

    Science.gov (United States)

    Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

    2016-09-01

    Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

  4. Compensating Unknown Time-Varying Delay in Opto-Electronic Platform Tracking Servo System

    Directory of Open Access Journals (Sweden)

    Ruihong Xie

    2017-05-01

    Full Text Available This paper investigates the problem of compensating miss-distance delay in opto-electronic platform tracking servo system. According to the characteristic of LOS (light-of-sight motion, we setup the Markovian process model and compensate this unknown time-varying delay by feed-forward forecasting controller based on robust H∞ control. Finally, simulation based on double closed-loop PI (Proportion Integration control system indicates that the proposed method is effective for compensating unknown time-varying delay. Tracking experiments on the opto-electronic platform indicate that RMS (root-mean-square error is 1.253 mrad when tracking 10° 0.2 Hz signal.

  5. Monolithic microwave integrated circuits: Interconnections and packaging considerations

    Science.gov (United States)

    Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.

    1984-01-01

    Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

  6. Monolithic microwave integrated circuits: Interconnections and packaging considerations

    Science.gov (United States)

    Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.

    Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

  7. Hybrid optoelectronic device with multiple bistable outputs

    Energy Technology Data Exchange (ETDEWEB)

    Costazo-Caso, Pablo A; Jin Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.are, E-mail: granieri@rose-hulma.edu, E-mail: siahmako@rose-hulma.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

    2011-01-01

    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  8. Planning and design of the Gulf States interconnection

    International Nuclear Information System (INIS)

    Al Alawi, J.; Sud, S.; McGillis, D.

    1994-01-01

    On May 25, 1981, the six Arab state of Bahrain, Kuwait, Oman, Qatar, Saudi Arabia and the United Arab Emirates (UAE) formally ratified the charter of the organization named Co-operation Council for the Arab States of the Gulf. This has become more popularly known as the Gulf Cooperation Council (GCC). In the mid 1980s, the integration of the electric systems study in the GCC was initiated, and several possible interconnection schemes to provide for reserve sharing and generally more economic and flexible operation of the networks were proposed. The GCC subsequently asked for an update of this study and a recommended interconnection scheme. this update study was completed in 1990, and a definite scheme was proposed, which met with the approval of all GCC members. This presentation describes the proposed interconnection, the studies that led to its selection, and the associated management structure required for its implementation. the population of the GCC states, and their load, generating capacity, and the transmission systems are shown

  9. Rapid thermal cycling of new technology solar array blanket coupons

    Science.gov (United States)

    Scheiman, David A.; Smith, Bryan K.; Kurland, Richard M.; Mesch, Hans G.

    1990-01-01

    NASA Lewis Research Center is conducting thermal cycle testing of a new solar array blanket technologies. These technologies include test coupons for Space Station Freedom (SSF) and the advanced photovoltaic solar array (APSA). The objective of this testing is to demonstrate the durability or operational lifetime of the solar array interconnect design and blanket technology within a low earth orbit (LEO) or geosynchronous earth orbit (GEO) thermal cycling environment. Both the SSF and the APSA array survived all rapid thermal cycling with little or no degradation in peak performance. This testing includes an equivalent of 15 years in LEO for SSF test coupons and 30 years of GEO plus ten years of LEO for the APSA test coupon. It is concluded that both the parallel gap welding of the SSF interconnects and the soldering of the APSA interconnects are adequately designed to handle the thermal stresses of space environment temperature extremes.

  10. Load shedding scheme in the south/southeastern interconnected system

    Energy Technology Data Exchange (ETDEWEB)

    Vieira Filho, Xisto; Couri, J J.G.; Gomes, P; Almeida, P C [ELETROBRAS, Rio de Janeiro, RJ (Brazil)

    1988-12-31

    This paper presents some characteristics of the Brazilian interconnected system and discusses the load shedding scheme in its different stages considering the beginning of operation of the Itaipu power plant. The present situation of the South and Southeastern load shedding scheme combination is also commented. Finally, the interconnected system evolution and the effects on the load shedding schemes are discussed. 4 refs., 5 figs., 2 tabs.

  11. Optical waveguiding and applied photonics technological aspects, experimental issue approaches and measurements

    CERN Document Server

    Massaro, Alessandro

    2012-01-01

    Optoelectronics--technology based on applications light such as micro/nano quantum electronics, photonic devices, laser for measurements and detection--has become an important field of research. Many applications and physical problems concerning optoelectronics are analyzed in Optical Waveguiding and Applied Photonics.The book is organized in order to explain how to implement innovative sensors starting from basic physical principles. Applications such as cavity resonance, filtering, tactile sensors, robotic sensor, oil spill detection, small antennas and experimental setups using lasers are a

  12. Synthesis and Characterization of Three Dimensional Nanostructures Based on Interconnected Carbon Nanomaterials

    Science.gov (United States)

    Koizumi, Ryota

    This thesis addresses various types of synthetic methods for novel three dimensional nanomaterials and nanostructures based on interconnected carbon nanomaterials using solution chemistry and chemical vapor deposition (CVD) methods. Carbon nanotube (CNT) spheres with porous and scaffold structures consisting of interconnected CNTs were synthesized by solution chemistry followed by freeze-drying, which have high elasticity under nano-indentation tests. This allows the CNT spheres to be potentially applied to mechanical dampers. CNTs were also grown on two dimensional materials--such as reduced graphene oxide (rGO) and hexagonal boron nitride (h-BN)--by CVD methods, which are chemically interconnected. CNTs on rGO and h-BN interconnected structures performed well as electrodes for supercapacitors. Furthermore, unique interconnected flake structures of alpha-phase molybdenum carbide were developed by a CVD method. The molybdenum carbide can be used for a catalyst of hydrogen evolution reaction activity as well as an electrode for supercapacitors.

  13. Regulate or deregulate. Influencing network interconnection charges

    Energy Technology Data Exchange (ETDEWEB)

    Van De Wielle, B.

    2003-06-01

    We study the choice between regulating interconnection charges or delegating their determination to the operators, both in a non-mature and a mature market. Three regulatory regimes are considered: full, cost-based and bill-and-keep. Delegation corresponds to bargaining about the interconnection charges using the regulatory schemes as disagreement outcomes. Applying regulation benefits the consumers. Under full regulation, access charges account for asymmetries and allow a unique Ramsey price. Delegation benefits the operators. In a mature market delegation robs the government of any market influence. In a non-mature market government preferences coincide with those of the largest operator and are disadvantageous for entry.

  14. Energy conservation through the implementation of cogeneration and grid interconnection

    International Nuclear Information System (INIS)

    Dashash, M. A.

    2007-01-01

    With increasing awareness of energy conservation and environmental protection, the Arab World is moving to further improve energy conversion efficiency. The equivalent of over 2.7 MM bbl is being daily burnt to fuel the thermal power plants that represent 92% of the total Arab power generation. This adds up to close to one billion barrels annually. At a conservative 30$ per barrel, this represents a daily cost of over $81 Million. This paper will introduce two strategies with the ultimate objective to cut-off up to half of the current fuel consumption. Firstly, Cogeneration Technology is able to improve thermal efficiency from the current average of less than 25% to up to 80%. Just 1% improvement in power plant thermal efficiency represents 3 million $/day in fuel cost savings. In addition, a well-designed and operated cogeneration plant will: - Reduce unfriendly emissions by burning less fuel as a result of higher thermal efficiency, - Increase the decentralization of electrical generation, - Improve the reliability of electricity supply. As an example, the Kingdom of Saudi Arabia's experience of implementing cogeneration will be presented, in particular within its hydrocarbon facilities and desalination plants. This will include the existing facilities and the planned and on-going projects. Secondly, by interconnecting the power networks of all the adjacent Arab countries, the following benefits could be reached: - Reduce generation reserves and enhance the system reliability, - Improve the economic efficiency of the electricity power systems, - Provide power exchange and strengthen the supply reliability, - Adopt technological development and use the best modern technologies. At least two factors plead for this direction. On one hand, the four-hour time zone difference from Eastern to Western Arab World makes it easy to exchange power. On the other hand, this will help to reduce the reserve capacity and save on corresponding Capital investment, fuel, and O and M

  15. At the speed of light? electricity interconnections for Europe

    International Nuclear Information System (INIS)

    Nies, S.

    2010-01-01

    Electricity moves almost at the speed of light: 273,000 km per second. The speed of electricity makes it the ultimate 'just in time' commodity. A problem anywhere can be transmitted every where in a nanosecond. Electricity interconnection is a prominent issue in the news, sometimes even featured as a panacea for the shortcomings of the European electricity market - a panacea that will ensure security o supply, solidarity and pave the way for a promising use of renewables in the future. The present study is devoted to electricity interconnections in Europe, their current state and the projects concerning them. The study addresses the following questions: - What is the role of interconnections in the development of a sustainable grid that can emerge from the existing pieces, make optimum use of existing generation capacity, ensure energy security, and offer economies of scales? What is their role in the process of building a different energy concept, one that would be concerned with climate change and thus in favour of the use of renewables? - How are existing interconnections exploited and governed, and how can their exploitation be improved? Does the EU need more and new interconnections; and if so, where and why, and who is going to finance them? Prominent projects as such as Desertec, the debate on DC or AC lines, or the limits of synchronization, as well as the state of a potential East-West electricity linkage between Former Soviet Union and EU, termed UCTE-UPS/IPS, are discussed in the volume. Part I develops definitions and basic notions necessary for the understanding of the subject. It also addresses the independent variables that influence interconnections (here the dependent variable), and recounts the historical legacies and their enduring impact on today's grid. Part II is devoted to the EU legal framework and to the complex landscape of governance and its current state of transition. Part III addresses the management of existing interconnections and

  16. Label-controlled optical packet routing technologies and applications

    DEFF Research Database (Denmark)

    Koonen, A.M.J.; Yan, N.; Vegas Olmos, Juan José

    2007-01-01

    An overview is given of various optical packet labeling techniques. The architecture and technologies are discussed for optical packet routing nodes using orthogonal labeling with optoelectronic label processing, and for nodes using time-serial labeling with all-optical time-serial label processing...

  17. Estimation of Dynamic Errors in Laser Optoelectronic Dimension Gauges for Geometric Measurement of Details

    Directory of Open Access Journals (Sweden)

    Khasanov Zimfir

    2018-01-01

    Full Text Available The article reviews the capabilities and particularities of the approach to the improvement of metrological characteristics of fiber-optic pressure sensors (FOPS based on estimation estimation of dynamic errors in laser optoelectronic dimension gauges for geometric measurement of details. It is shown that the proposed criteria render new methods for conjugation of optoelectronic converters in the dimension gauge for geometric measurements in order to reduce the speed and volume requirements for the Random Access Memory (RAM of the video controller which process the signal. It is found that the lower relative error, the higher the interrogetion speed of the CCD array. It is shown that thus, the maximum achievable dynamic accuracy characteristics of the optoelectronic gauge are determined by the following conditions: the parameter stability of the electronic circuits in the CCD array and the microprocessor calculator; linearity of characteristics; error dynamics and noise in all electronic circuits of the CCD array and microprocessor calculator.

  18. Compact models and performance investigations for subthreshold interconnects

    CERN Document Server

    Dhiman, Rohit

    2014-01-01

    The book provides a detailed analysis of issues related to sub-threshold interconnect performance from the perspective of analytical approach and design techniques. Particular emphasis is laid on the performance analysis of coupling noise and variability issues in sub-threshold domain to develop efficient compact models. The proposed analytical approach gives physical insight of the parameters affecting the transient behavior of coupled interconnects. Remedial design techniques are also suggested to mitigate the effect of coupling noise. The effects of wire width, spacing between the wires, wi

  19. Astronomy and Space Technologies, WILGA 2012; EuCARD Sessions

    CERN Document Server

    Romaniuk, R S

    2012-01-01

    Wilga Sessions on HEP experiments, astroparticle physics and accelerator technology were organized under the umbrella of the EU FP7 Project EuCARD – European Coordination for Accelerator Research and Development. This paper is the first part (out of five) of the research survey of WILGA Symposium work, May 2012 Edition, concerned with photonics and electronics applications in astronomy and space technologies. It presents a digest of chosen technical work results shown by young researchers from different technical universities from this country during the Jubilee XXXth SPIE-IEEE Wilga 2012, May Edition, symposium on Photonics and Web Engineering. Topical tracks of the symposium embraced, among others, nanomaterials and nanotechnologies for photonics, sensory and nonlinear optical fibers, object oriented design of hardware, photonic metrology, optoelectronics and photonics applications, photonics-electronics co-design, optoelectronic and electronic systems for astronomy and high energy physics experiments, JE...

  20. Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique

    Directory of Open Access Journals (Sweden)

    D. Lopez-Diaz

    2015-11-01

    Full Text Available Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.

  1. Research on the processing technology of medium-caliber aspheric lens in the optoelectronic integrated test system

    Science.gov (United States)

    Liu, Dan; Yu, Xin-ying; Wang, Wei

    2016-10-01

    In the optoelectronic integrated test system, surface profile and finish of the optical element are put forward higher request. Taking an aspherical quartz glass lens with a diameter of 200mm as example, taking Preston hypothesis as the theoretical basis, analyze the influence of surface quality of various process parameters, including the workpiece and the tool axis spindle speed, wheel type, concentration polishing, polishing mold species, dwell time, polishing pressure and other parameters. Using CNC method for the surface profile and surface quality of the lens were investigated. Taking profilometer measurement results as a guide, by testing and simulation analysis, process parameters were improved constantly in the process of manufacturing. Mid and high frequency error were trimmed and improved so that the surface form gradually converged to the required accuracy. The experimental results show that the final accuracy of the surface is less than 2µm and the surface finish is, which fulfils the accuracy requirement of aspherical focusing lens in optical system.

  2. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    KAUST Repository

    Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He, Jr-Hau

    2016-01-01

    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via

  3. Vertically aligned multiwalled carbon nanotubes as electronic interconnects

    Science.gov (United States)

    Gopee, Vimal Chandra

    The drive for miniaturisation of electronic circuits provides new materials challenges for the electronics industry. Indeed, the continued downscaling of transistor dimensions, described by Moore’s Law, has led to a race to find suitable replacements for current interconnect materials to replace copper. Carbon nanotubes have been studied as a suitable replacement for copper due to its superior electrical, thermal and mechanical properties. One of the advantages of using carbon nanotubes is their high current carrying capacity which has been demonstrated to be three orders of magnitude greater than that of copper. Most approaches in the implementation of carbon nanotubes have so far focused on the growth in vias which limits their application. In this work, a process is described for the transfer of carbon nanotubes to substrates allowing their use for more varied applications. Arrays of vertically aligned multiwalled carbon nanotubes were synthesised by photo-thermal chemical vapour deposition with high growth rates. Raman spectroscopy was used to show that the synthesised carbon nanotubes were of high quality. The carbon nanotubes were exposed to an oxygen plasma and the nature of the functional groups present was determined using X-ray photoelectron spectroscopy. Functional groups, such as carboxyl, carbonyl and hydroxyl groups, were found to be present on the surface of the multiwalled carbon nanotubes after the functionalisation process. The multiwalled carbon nanotubes were metallised after the functionalisation process using magnetron sputtering. Two materials, solder and sintered silver, were chosen to bind carbon nanotubes to substrates so as to enable their transfer and also to make electrical contact. The wettability of solder to carbon nanotubes was investigated and it was demonstrated that both functionalisation and metallisation were required in order for solder to bond with the carbon nanotubes. Similarly, functionalisation followed by metallisation

  4. Aspirations of Responsibility and Emerging Technologies

    NARCIS (Netherlands)

    Bowman, D.M.; Dijkstra, A.; Fautz, C.; Guivant, J.S.; Konrad, Kornelia Elke; van Lente, H; van Lente, H.; Woll, S.; Bowman, D.; Dijkstra, A.; Fautz, C.; Guivant, J.; Konrad, K.; van Lente, H; Woll, S.

    2016-01-01

    We live in an increasingly complex and interconnected world. Where technology, and its potential benefits and risks, are not bound by, and do not respect, jurisdictional borders. A world that sees technological innovation as being an integral component of the Anthropocene, and resilience as being

  5. COMPUTER MODELING OF THE ROLLING TECHNOLOGICAL REGIMES INFLUENCE ON MICROSTRUCTURE OF EUTECTOID COLONIES OF ROD PEARLITE

    Directory of Open Access Journals (Sweden)

    A. N. Chichko

    2010-01-01

    Full Text Available Interconnection between the parameters of the rolled wire production technology and characteristics of its microstructure is shown. The correlation interconnections between the characteristics of the rolled wire microstructure, calculated by method of image processing, and technology of its receipt in conditions of RUP «BMZ» are determined. 

  6. The myth of interconnected plastids and related phenomena.

    Science.gov (United States)

    Schattat, Martin H; Barton, Kiah A; Mathur, Jaideep

    2015-01-01

    Studies spread over nearly two and a half centuries have identified the primary plastid in autotrophic algae and plants as a pleomorphic, multifunctional organelle comprising of a double-membrane envelope enclosing an organization of internal membranes submerged in a watery stroma. All plastid units have been observed extending and retracting thin stroma-filled tubules named stromules sporadically. Observations on living plant cells often convey the impression that stromules connect two or more independent plastids with each other. When photo-bleaching techniques were used to suggest that macromolecules such as the green fluorescent protein could flow between already interconnected plastids, for many people this impression changed to conviction. However, it was noticed only recently that the concept of protein flow between plastids rests solely on the words "interconnected plastids" for which details have never been provided. We have critically reviewed botanical literature dating back to the 1880s for understanding this term and the phenomena that have become associated with it. We find that while meticulously detailed ontogenic studies spanning nearly 150 years have established the plastid as a singular unit organelle, there is no experimental support for the idea that interconnected plastids exist under normal conditions of growth and development. In this review, while we consider several possibilities that might allow a single elongated plastid to be misinterpreted as two or more interconnected plastids, our final conclusion is that the concept of direct protein flow between plastids is based on an unfounded assumption.

  7. Improving the security of optoelectronic delayed feedback system by parameter modulation and system coupling

    Science.gov (United States)

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

    2016-02-01

    A coupled system with varying parameters is proposed to improve the security of optoelectronic delayed feedback system. This system is coupled by two parameter-varied optoelectronic delayed feedback systems with chaotic modulation. Dynamics performance results show that this system has a higher complexity compared to the original one. Furthermore, this system can conceal the time delay effectively against the autocorrelation function and delayed mutual information method and can increase the dimension space of secure parameters to resist brute-force attack by introducing the digital chaotic systems.

  8. Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

    Science.gov (United States)

    Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

    2015-05-01

    The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

  9. 78 FR 19259 - Notice of Attendance at PJM Interconnection, L.L.C. Meetings

    Science.gov (United States)

    2013-03-29

    ... Interconnection, L.L.C. Meetings The Federal Energy Regulatory Commission (Commission) hereby gives notice that members of the Commission and Commission staff may attend upcoming PJM Interconnection, L.L.C. (PJM... proceedings: Docket No. EL05-121, PJM Interconnection, L.L.C. Docket No. EL08-14, Black Oak Energy LLC, et al...

  10. Ceria based protective coatings for steel interconnects prepared by spray pyrolysis

    DEFF Research Database (Denmark)

    Szymczewska, Dagmara; Molin, Sebastian; Chen, Ming

    2014-01-01

    Stainless steels can be used in solid oxide fuel/electrolysis stacks as interconnects. For successful long term operation they require protective coatings, that lower the corrosion rate and block chemical reactions between the interconnect and adjacent layers of the oxygen or the hydrogen electrode....... One of the promising coating materials for the hydrogen side is ceria. Using standard sintering techniques, ceria sinters at around 1400°C which even for a very short exposure would destroy the interconnect. Therefore in this paper a low temperature deposition method, i.e. spray pyrolysis, is used...

  11. NASA 2009 Body of Knowledge (BoK) Through-Slicon Via Technology

    Science.gov (United States)

    Gerke, David

    2009-01-01

    Through-silicon via (TSV) is the latest in a progression of technologies for stacking silicon devices in three dimensions (3D). Driven by the need for improved performance, methods to use short vertical interconnects to replace the long interconnects found in 2D structures have been developed. The industry is moving past the feasibility (research and development [R and D]) phase for TSV technology into the commercialization phase where economic realities will determine which technologies are adopted. Low-cost fine via hole formation and highly reliable via filling technologies have been demonstrated; process equipment and materials are available. Even though design, thermal, and test issues remain, much progress has been made.

  12. IC layout adjustment method and tool for improving dielectric reliability at interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Kahng, Andrew B.; Chan, Tuck Boon

    2018-03-20

    Method for adjusting a layout used in making an integrated circuit includes one or more interconnects in the layout that are susceptible to dielectric breakdown are selected. One or more selected interconnects are adjusted to increase via to wire spacing with respect to at least one via and one wire of the one or more selected interconnects. Preferably, the selecting analyzes signal patterns of interconnects, and estimates the stress ratio based on state probability of routed signal nets in the layout. An annotated layout is provided that describes distances by which one or more via or wire segment edges are to be shifted. Adjustments can include thinning and shifting of wire segments, and rotation of vias.

  13. Decentralized automatic generation control of interconnected power systems incorporating asynchronous tie-lines.

    Science.gov (United States)

    Ibraheem; Hasan, Naimul; Hussein, Arkan Ahmed

    2014-01-01

    This Paper presents the design of decentralized automatic generation controller for an interconnected power system using PID, Genetic Algorithm (GA) and Particle Swarm Optimization (PSO). The designed controllers are tested on identical two-area interconnected power systems consisting of thermal power plants. The area interconnections between two areas are considered as (i) AC tie-line only (ii) Asynchronous tie-line. The dynamic response analysis is carried out for 1% load perturbation. The performance of the intelligent controllers based on GA and PSO has been compared with the conventional PID controller. The investigations of the system dynamic responses reveal that PSO has the better dynamic response result as compared with PID and GA controller for both type of area interconnection.

  14. Development of an optoelectronic holographic platform for otolaryngology applications

    Science.gov (United States)

    Harrington, Ellery; Dobrev, Ivo; Bapat, Nikhil; Flores, Jorge Mauricio; Furlong, Cosme; Rosowski, John; Cheng, Jeffery Tao; Scarpino, Chris; Ravicz, Michael

    2010-08-01

    In this paper, we present advances on our development of an optoelectronic holographic computing platform with the ability to quantitatively measure full-field-of-view nanometer-scale movements of the tympanic membrane (TM). These measurements can facilitate otologists' ability to study and diagnose hearing disorders in humans. The holographic platform consists of a laser delivery system and an otoscope. The control software, called LaserView, is written in Visual C++ and handles communication and synchronization between hardware components. It provides a user-friendly interface to allow viewing of holographic images with several tools to automate holography-related tasks and facilitate hardware communication. The software uses a series of concurrent threads to acquire images, control the hardware, and display quantitative holographic data at video rates and in two modes of operation: optoelectronic holography and lensless digital holography. The holographic platform has been used to perform experiments on several live and post-mortem specimens, and is to be deployed in a medical research environment with future developments leading to its eventual clinical use.

  15. Microfluidic optoelectronic sensor for salivary diagnostics of stomach cancer.

    Science.gov (United States)

    Zilberman, Yael; Sonkusale, Sameer R

    2015-05-15

    We present a microfluidic optoelectronic sensor for saliva diagnostics with a potential application for non-invasive early diagnosis of stomach cancer. Stomach cancer is the second most common cause of cancer-related deaths in the world. The primary identified cause is infection by a gram-negative bacterium Helicobacter pylori. These bacteria secrete the enzyme urease that converts urea into carbon dioxide (CO2) and ammonia (NH3), leading to their elevated levels in breath and body fluids. The proposed optoelectronic sensor will detect clinically relevant levels of CO2 and NH3 in saliva that can potentially be used for early diagnosis of stomach cancer. The sensor is composed of the embedded in a microfluidic device array of microwells filled with ion-exchange polymer microbeads doped with various organic dyes. The optical response of this unique highly diverse sensor is monitored over a broad spectrum, which provides a platform for cross-reactive sensitivity and allows detection of CO2 and NH3 in saliva at ppm levels. Copyright © 2014 Elsevier B.V. All rights reserved.

  16. 77 FR 3766 - PJM Interconnection, L.L.C.; Notice of Staff Technical Conference

    Science.gov (United States)

    2012-01-25

    ... Interconnection, L.L.C.; Notice of Staff Technical Conference On December 14, 2011, the Commission issued an order... Interconnection, L.L.C.'s (PJM) filing.\\1\\ Take notice that the technical conference will be held on February 14...\\ PJM Interconnection, L.L.C., 137 FERC ] 61,204 (2011) (December 14 Order). All interested parties are...

  17. Bi cluster-assembled interconnects produced using SU8 templates

    International Nuclear Information System (INIS)

    Partridge, J G; Matthewson, T; Brown, S A

    2007-01-01

    Bi clusters with an average diameter of 25 nm have been deposited from an inert gas aggregation source and assembled into thin-film interconnects which are formed between planar electrical contacts and supported on Si substrates passivated with Si 3 N 4 or thermally grown oxide. A layer of SU8 (a negative photoresist based on EPON SU-8 epoxy resin) is patterned using optical or electron-beam lithography, and it defines the position and dimensions of the cluster film. The conduction between the contacts is monitored throughout the deposition/assembly process, and subsequent I(V) characterization is performed in situ. Bi cluster-assembled interconnects have been fabricated with nanoscale widths and with up to 1:1 thickness:width aspect ratios. The conductivity of these interconnects has been increased, post-deposition, using a simple thermal annealing process

  18. 77 FR 10505 - Notice of Attendance at PJM Interconnection, L.L.C. Meetings

    Science.gov (United States)

    2012-02-22

    ... Interconnection, L.L.C. Meetings The Federal Energy Regulatory Commission (Commission) hereby gives notice that members of the Commission and Commission staff may attend upcoming PJM Interconnection, L.L.C. (PJM..., PJM Interconnection, L.L.C. Docket Nos. ER06-456, ER06-880, ER06-954, ER06-1271, EL07-57, ER07-424...

  19. Two component micro injection moulding for moulded interconnect devices

    DEFF Research Database (Denmark)

    Islam, Aminul

    2008-01-01

    Moulded interconnect devices (MIDs) contain huge possibilities for many applications in micro electro-mechanical-systems because of their capability of reducing the number of components, process steps and finally in miniaturization of the product. Among the available MID process chains, two...... component injection moulding is one of the most industrially adaptive processes. However, the use of two component injection moulding for MID fabrication, with circuit patterns in the sub-millimeter range, is still a big challenge at the present state of technology. The scope of the current Ph.D. project...... and a reasonable adhesion between them. • Selective metallization of the two component plastic part (coating one polymer with metal and leaving the other one uncoated) To overcome these two main issues in MID fabrication for micro applications, the current Ph.D. project explores the technical difficulties...

  20. Energetic diversification in the interconnected electric system

    International Nuclear Information System (INIS)

    Villanueva M, C.; Beltran M, H.; Serrano G, J.A.

    2007-01-01

    In the interconnected electric system of Mexico the demanded electricity in different timetable periods it is synthesized in the annual curve of load duration, which is characterized by three regions. The energy in every period is quantified according to the under curve areas in each region, which depend of the number of hours in that the power demand exceeds the minimum and the intermediate demands respectively that are certain percentages of the yearly maximum demand. In that context, the generating power stations are dispatched according to the marginal costs of the produced electricity and the electric power to be generated every year by each type of central it is located in some of the regions of the curve of load duration, as they are their marginal costs and their operation characteristic techniques. By strategic reasons it is desirable to diversify the primary energy sources that are used in the national interconnected system to generate the electricity that demand the millions of consumers that there are in Mexico. On one hand, when intensifying the use of renewable sources and of nucleo electric centrals its decrease the import volumes of natural gas, which has very volatile prices and it is a fuel when burning in the power stations produces hothouse gases that are emitted to the atmosphere. On the other hand, when diversifying the installed capacity of the different central types in the interconnected system, a better adaptation of the produced electricity volumes is achieved by each type to the timetable variation, daily, weekly and seasonal of the electric demand, as one manifests this in the curve of load duration. To exemplify a possible diversification plan of the installed capacity in the national interconnected system that includes nucleo electric centrals and those that use renewable energy, charts are presented that project of 2005 at 2015 the capacity, energy and ost of the electricity of different central types, located in each one of the

  1. Two-dimensional gold nanoparticle arrays. A platform for molecular optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Mangold, Markus Andreas

    2011-11-15

    In my research, I study the optoelectronic properties of two-dimensional, hexagonal gold nanoparticle arrays formed by self-assembly. When the nanoparticle arrays are embedded in a matrix of alkane thiols, the photoresponse is dominated by a bolometric conductance increase. At room temperature, I observe a strong enhancement of the bolometric photoconductance when the surface plasmon resonance of the nanoparticles is excited. At cryogenic temperatures, the bolometric conductance enhancement leads to a redistribution of the potential landscape which dominates the optoelectronic response of the nanoparticle arrays. When optically active oligo(phenylene vinylene) (OPV) molecules are covalently bound to the nanoparticles, an increased photoconductance due to the resonant excitation of the OPV is observed. The results suggest that the charge carriers, which are resonantly excited in the OPV molecules, directly contribute to the current flow through the nanoparticle arrays. Thus, the conductance of OPV in its excited state is measured in the presented experiments. (orig.)

  2. Nanophotonic Devices for Optical Interconnect

    DEFF Research Database (Denmark)

    Van Thourhout, D.; Spuesens, T.; Selvaraja, S.K.

    2010-01-01

    We review recent progress in nanophotonic devices for compact optical interconnect networks. We focus on microdisk-laser-based transmitters and discuss improved design and advanced functionality including all-optical wavelength conversion and flip-flops. Next we discuss the fabrication uniformity...... of the passive routing circuits and their thermal tuning. Finally, we discuss the performance of a wavelength selective detector....

  3. Graphene optoelectronics synthesis, characterization, properties, and applications

    CERN Document Server

    bin M Yusoff, Abdul Rashid

    2014-01-01

    This first book on emerging applications for this innovative material gives an up-to-date account of the many opportunities graphene offers high-end optoelectronics.The text focuses on potential as well as already realized applications, discussing metallic and passive components, such as transparent conductors and smart windows, as well as high-frequency devices, spintronics, photonics, and terahertz devices. Also included are sections on the fundamental properties, synthesis, and characterization of graphene. With its unique coverage, this book will be welcomed by materials scientists, solid-

  4. Generation adequacy and transmission interconnection in regional electricity markets

    International Nuclear Information System (INIS)

    Cepeda, Mauricio; Saguan, Marcelo; Finon, Dominique; Pignon, Virginie

    2009-01-01

    The power system capacity adequacy has public good features that cannot be entirely solved by electricity markets. Regulatory intervention is then necessary and established methods have been used to assess adequacy and help regulators to fix this market failure. In regional electricity markets, transmission interconnections play an important role in contributing to adequacy. However, the adequacy problem and related policy are typically considered at a national level. This paper presents a simple model to study how the interconnection capacity interacts with generation adequacy. First results indicate that increasing interconnection capacity between systems improves adequacy up to a certain level; further increases do not procure additional adequacy improvements. Furthermore, besides adequacy improvement, increasing transmission capacity under asymmetric adequacy criteria or national system characteristics could create several concerns about externalities. These results imply that regional coordination of national adequacy policies is essential to internalise adequacy of cross-border effects.

  5. Flexible thermoelectric generator using bulk legs and liquid metal interconnects for wearable electronics

    International Nuclear Information System (INIS)

    Suarez, Francisco; Parekh, Dishit P.; Ladd, Collin; Vashaee, Daryoosh; Dickey, Michael D.; Öztürk, Mehmet C.

    2017-01-01

    Highlights: •Flexible thermoelectric generator (TEG) with bulk legs. •Flexible thermoelectric generator with liquid metal interconnects. •Flexible TEG with potential to match the performance of rigid TEGs. •Flexible TEG for wearable electronics. -- Abstract: Interest in wearable electronics for continuous, long-term health and performance monitoring is rapidly increasing. The reduction in power levels consumed by sensors and electronic circuits accompanied by the advances in energy harvesting methods allows for the realization of self-powered monitoring systems that do not have to rely on batteries. For wearable electronics, thermoelectric generators (TEGs) offer the unique ability to continuously convert body heat into usable energy. For body harvesting, it is preferable to have TEGs that are thin, soft and flexible. Unfortunately, the performances of flexible modules reported to date have been far behind those of their rigid counterparts. This is largely due to lower efficiencies of the thermoelectric materials, electrical or thermal parasitic losses and limitations on leg dimensions posed by the synthesis techniques. In this work, we present an entirely new approach and explore the possibility of using standard bulk legs in a flexible package. Bulk thermoelectric legs cut from solid ingots are far superior to thermoelectric materials synthesized using other techniques. A key enabler of the proposed technology is the use of EGaIn liquid metal interconnects, which not only provide extremely low interconnect resistance but also stretchability with self-healing, both of which are essential for flexible TE modules. The results suggest that this novel approach can finally produce flexible TEGs that have the potential to challenge the rigid TEGs and provide a pathway for the realization of self-powered wearable electronics.

  6. Green interconnecting materials for semiconductor industry

    NARCIS (Netherlands)

    Matin, M.A.; Vellinga, W.P.; Geers, M.G.D.; Sawada, K.; Ishida, M.

    2009-01-01

    Interconnecting materials experience a complex thermo-mechanical load in applications. This may lead to the formation of macroscopic cracks resulting from induced stresses of the differences in thermal expansion coefficients on a sample scale (since different materials are involved) and on a grain

  7. An architectural model for network interconnection

    NARCIS (Netherlands)

    van Sinderen, Marten J.; Vissers, C.A.; Kalin, T.

    1983-01-01

    This paper presents a technique of successive decomposition of a common users' activity to illustrate the problems of network interconnection. The criteria derived from this approach offer a structuring principle which is used to develop an architectural model that embeds heterogeneous subnetworks

  8. Nominate an Organization | Distributed Generation Interconnection

    Science.gov (United States)

    Collaborative | NREL Nominate an Organization Nominate an Organization Do you know of an organization doing high-quality, innovative work on the interconnection of distributed generation? Want to practices by nominating an organization to be profiled in an online case study! Please include your

  9. Problems of systems dataware using optoelectronic measuring means of linear displacement

    Science.gov (United States)

    Bazykin, S. N.; Bazykina, N. A.; Samohina, K. S.

    2017-10-01

    Problems of the dataware of the systems with the use of optoelectronic means of the linear displacement are considered in the article. The classification of the known physical effects, realized by the means of information-measuring systems, is given. The organized analysis of information flows in technical systems from the standpoint of determination of inaccuracies of measurement and management was conducted. In spite of achieved successes in automation of machine-building and instruments-building equipment in the field of dataware of the technical systems, there are unresolved problems, concerning the qualitative aspect of the production process. It was shown that the given problem can be solved using optoelectronic lazer information-measuring systems. Such information-measuring systems are capable of not only executing the measuring functions, but also solving the problems of management and control during processing, thereby guaranteeing the quality of final products.

  10. Characterization of a Cobalt-Tungsten Interconnect

    DEFF Research Database (Denmark)

    Harthøj, Anders; Holt, Tobias; Caspersen, Michael

    2012-01-01

    is to act both as a diffusion barrier for chromium and provide better protection against high temperature oxidation than a pure cobalt coating. This work presents a characterization of a cobalt-tungsten alloy coating electrodeposited on the ferritic steel Crofer 22 H which subsequently was oxidized in air......A ferritic steel interconnect for a solid oxide fuel cell must be coated in order to prevent chromium evaporation from the steel substrate. The Technical University of Denmark and Topsoe Fuel Cell have developed an interconnect coating based on a cobalt-tungsten alloy. The purpose of the coating...... for 300 h at 800 °C. The coating was characterized with Glow Discharge Optical Spectroscopy (GDOES), Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD). The oxidation properties were evaluated by measuring weight change of coated samples of Crofer 22 H and Crofer 22 APU as a function...

  11. Comparative Analysis and Considerations for PV Interconnection Standards in the United States and China

    Energy Technology Data Exchange (ETDEWEB)

    None

    2017-01-01

    The main objectives of this report are to evaluate China's photovoltaic (PV) interconnection standards and the U.S. counterparts and to propose recommendations for future revisions to these standards. This report references the 2013 report Comparative Study of Standards for Grid-Connected PV System in China, the U.S. and European Countries, which compares U.S., European, and China's PV grid interconnection standards; reviews various metrics for the characterization of distribution network with PV; and suggests modifications to China's PV interconnection standards and requirements. The recommendations are accompanied by assessments of four high-penetration PV grid interconnection cases in the United States to illustrate solutions implemented to resolve issues encountered at different sites. PV penetration in China and in the United States has significantly increased during the past several years, presenting comparable challenges depending on the conditions of the grid at the point of interconnection; solutions are generally unique to each interconnected PV installation or PV plant.

  12. Ultrahigh-speed hybrid laser for silicon photonic integrated chips

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Park, Gyeong Cheol; Ran, Qijiang

    2013-01-01

    Increasing power consumption for electrical interconnects between and inside chips is posing a real challenge to continue the performance scaling of processors/computers as predicted by D. Moore. In recent processors, energy consumption for electrical interconnects is half of power supplied...... and will be 80% in near future. This challenge strongly has motivated replacing electrical interconnects with optical ones even in chip level communications [1]. This chip-level optical interconnects need quite different performance of optoelectronic devices than required for conventional optical communications....... For a light source, the energy consumption per sending a bit is required to be

  13. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

    2016-01-01

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc

  14. High temperature corrosion of metallic interconnects in solid oxide fuel cells

    Directory of Open Access Journals (Sweden)

    Bastidas, D. M.

    2006-12-01

    Full Text Available Research and development has made it possible to use metallic interconnects in solid oxide fuel cells (SOFC instead of ceramic materials. The use of metallic interconnects was formerly hindered by the high operating temperature, which made the interconnect degrade too much and too fast to be an efficient alternative. When the operating temperature was lowered, the use of metallic interconnects proved to be favourable since they are easier and cheaper to produce than ceramic interconnects. However, metallic interconnects continue to be degraded despite the lowered temperature, and their corrosion products contribute to electrical degradation in the fuel cell. Coatings of nickel, chromium, aluminium, zinc, manganese, yttrium or lanthanum between the interconnect and the electrodes reduce this degradation during operation

    El uso de interconectores metálicos en pilas de combustible de óxido sólido (SOFC en sustitución de materiales cerámicos ha sido posible gracias a la investigación y desarrollo de nuevos materiales metálicos. Inicialmente, el uso de interconectores metálicos fue limitado, debido a la elevada temperatura de trabajo, ocasionando de forma rápida la degradación del material, lo que impedía que fuesen una alternativa. A medida que la temperatura de trabajo de las SOFC descendió, el uso de interconectores metálicos demostró ser una buena alternativa, dado que son más fáciles de fabricar y más baratos que los interconectores cerámicos. Sin embargo, los interconectores metálicos continúan degradándose a pesar de descender la temperatura a la que operan las SOFC y, asimismo, los productos de corrosión favorecen las pérdidas eléctricas de la pila de combustible. Recubrimientos de níquel, cromo, aluminio, zinc, manganeso, itrio y lantano entre el interconector y los electrodos reduce dichas pérdidas eléctricas.

  15. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    Energy Technology Data Exchange (ETDEWEB)

    Beimforde, Michael

    2010-07-19

    edge demonstrate that the active sensor area fraction can be increased to fulfill the requirements for the detector upgrades. A subset of sensors, irradiated up to the fluence expected at the sLHC demonstrated that thin sensors show a higher charge collection efficiency than expected from current radiation damage models. First thin diodes equipped with the SLID metallization and first test structures that were connected with SLID indicate that this novel interconnection as part of the ICV-SLID technology could be a suitable replacement for the present bump-bonding technology. Finally, a new calibration algorithm for the ATLAS pixel readout chips is presented which is used to lower the discriminator threshold from 4000 electrons to 2000 electrons, to account for the reduction of the signal size due to radiation damage and the reduced sensor thickness. (orig.)

  16. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    International Nuclear Information System (INIS)

    Beimforde, Michael

    2010-01-01

    sensor area fraction can be increased to fulfill the requirements for the detector upgrades. A subset of sensors, irradiated up to the fluence expected at the sLHC demonstrated that thin sensors show a higher charge collection efficiency than expected from current radiation damage models. First thin diodes equipped with the SLID metallization and first test structures that were connected with SLID indicate that this novel interconnection as part of the ICV-SLID technology could be a suitable replacement for the present bump-bonding technology. Finally, a new calibration algorithm for the ATLAS pixel readout chips is presented which is used to lower the discriminator threshold from 4000 electrons to 2000 electrons, to account for the reduction of the signal size due to radiation damage and the reduced sensor thickness. (orig.)

  17. Communication Requirements and Interconnect Optimization forHigh-End Scientific Applications

    Energy Technology Data Exchange (ETDEWEB)

    Kamil, Shoaib; Oliker, Leonid; Pinar, Ali; Shalf, John

    2007-11-12

    The path towards realizing peta-scale computing isincreasingly dependent on building supercomputers with unprecedentednumbers of processors. To prevent the interconnect from dominating theoverall cost of these ultra-scale systems, there is a critical need forhigh-performance network solutions whose costs scale linearly with systemsize. This work makes several unique contributions towards attaining thatgoal. First, we conduct one of the broadest studies to date of high-endapplication communication requirements, whose computational methodsinclude: finite-difference, lattice-bolzmann, particle in cell, sparselinear algebra, particle mesh ewald, and FFT-based solvers. Toefficiently collect this data, we use the IPM (Integrated PerformanceMonitoring) profiling layer to gather detailed messaging statistics withminimal impact to code performance. Using the derived communicationcharacterizations, we next present fit-trees interconnects, a novelapproach for designing network infrastructure at a fraction of thecomponent cost of traditional fat-tree solutions. Finally, we propose theHybrid Flexibly Assignable Switch Topology (HFAST) infrastructure, whichuses both passive (circuit) and active (packet) commodity switchcomponents to dynamically reconfigure interconnects to suit thetopological requirements of scientific applications. Overall ourexploration leads to a promising directions for practically addressingthe interconnect requirements of future peta-scale systems.

  18. Spectroscopic imaging technologies for online food safety and sanitation inspection

    Science.gov (United States)

    The Environmental Microbial and Food Safety Laboratory, ARS, USDA is one of the leading groups for the development of optoelectronic sensing technologies and methodologies for food quality, safety, and sanitation inspection. High throughput hyperspectral and multispectral imaging techniques use Ram...

  19. Simple and reusable fibre-to-chip interconnect with adjustable coupling eficiency

    NARCIS (Netherlands)

    Heideman, Rene; Lambeck, Paul; Parriaux, Olivier M.; Kley, Ernst-Bernhard

    1997-01-01

    A simple, efficient and reusable fiber-to-chip interconnect is presented. The interconnect is based on a V-groove (wet- chemically etched) in silicon, combined with a loose-mode Si3N4-channel waveguide. The loose-mode waveguide is adiabatically tapered to the integrated optical (sensor) circuitry.

  20. Investigation of performance degradation of SOFC using chromium-containing alloy interconnects

    DEFF Research Database (Denmark)

    Beeaff, D.R.; Dinesen, A.; Hendriksen, Peter Vang

    2007-01-01

    The long-term aging of a stack element (fuel cell, current collectors, and interconnect materials) was studied. A pair of tests were made in which one sample contained an interconnect, a high-temperature stainless steel (Crofer 22 APU), treated with an LSMC coating applied to the cathode-side int...

  1. Robust design of head interconnect for hard disk drive

    Science.gov (United States)

    Gao, X. K.; Liu, Q. H.; Liu, Z. J.

    2005-05-01

    Design of head interconnect is one of the important issues for hard disk drives with higher data rate and storage capacity. The impedance of interconnect and electromagnetic coupling influence the quality level of data communication. Thus an insightful study on how the trace configuration affects the impedance and crosstalk is necessary. An effective design approach based on Taguchi's robust design method is employed therefore in an attempt to realize impedance matching and crosstalk minimization with the effects of uncontrollable sources taken into consideration.

  2. Next Generation Space Interconnect Standard (NGSIS): a modular open standards approach for high performance interconnects for space

    Science.gov (United States)

    Collier, Charles Patrick

    2017-04-01

    The Next Generation Space Interconnect Standard (NGSIS) effort is a Government-Industry collaboration effort to define a set of standards for interconnects between space system components with the goal of cost effectively removing bandwidth as a constraint for future space systems. The NGSIS team has selected the ANSI/VITA 65 OpenVPXTM standard family for the physical baseline. The RapidIO protocol has been selected as the basis for the digital data transport. The NGSIS standards are developed to provide sufficient flexibility to enable users to implement a variety of system configurations, while meeting goals for interoperability and robustness for space. The NGSIS approach and effort represents a radical departure from past approaches to achieve a Modular Open System Architecture (MOSA) for space systems and serves as an exemplar for the civil, commercial, and military Space communities as well as a broader high reliability terrestrial market.

  3. Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

    KAUST Repository

    Catrysse, Peter B.; Fan, Shanhui

    2010-01-01

    We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from

  4. FY1995 optoelectronic devices and circuits for terabit class network; 1995 nendo terabit kyu network yo hikari denshi device kairo

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The necessary technology realizing Terabit class optical network is the signal multiplexing both in temporal and spectral domains. Controllability of ultrafast optoelectronic systems is therefore the priority issue. Specifically we chose semiconductor lasers as the key devices. The methodology for performance improvement and the creation of novel functionality are investigated. Firstly compression of semiconductor laser pulse reached the world record of 65 femto second. Secondly a proposal was made to control mode locked semiconductor lasers via subharmonic synchronization and a substantial phase noise reduction was demonstrated. Thirdly a new technology was developed to realize broadband anti-reflection coating on semiconductor laser amplifier facet, bringing about significant performance improvement. To compensate the dispersion induced signal distortion a broadband semiconductor laser amplifier four wave mixing was analyzed and also demonstrated experimentally. (NEDO)

  5. Smart Optoelectronic Sensors and Intelligent Sensor Systems

    Directory of Open Access Journals (Sweden)

    Sergey Y. YURISH

    2012-03-01

    Full Text Available Light-to-frequency converters are widely used in various optoelectronic sensor systems. However, a further frequency-to-digital conversion is a bottleneck in such systems due to a broad frequency range of light-to-frequency converters’ outputs. This paper describes an effective OEM design approach, which can be used for smart and intelligent sensor systems design. The design is based on novel, multifunctional integrated circuit of Universal Sensors & Transducers Interface especially designed for such sensor applications. Experimental results have confirmed an efficiency of this approach and high metrological performances.

  6. Thermo-electric Analysis of the Interconnection of the LHC main Superconducting Bus Bars

    CERN Document Server

    Granieri, P P; Casali, M; Bottura, L; Siemko, A

    2013-01-01

    Spurred by the question of the maximum allowable energy for the operation of the Large Hadron Collider (LHC), we have progressed in the understanding of the thermo-electric behavior of the 13 kA superconducting bus bars interconnecting its main magnets. A deep insight of the underlying mechanisms is required to ensure the protection of the accelerator against undesired effects of resistive transitions. This is especially important in case of defective interconnections which can jeopardize the operation of the whole LHC. In this paper we present a numerical model of the interconnections between the main dipole and quadrupole magnets, validated against experimental tests of an interconnection sample with a purposely built-in defect. We consider defective interconnections featuring a lack of bonding among the superconducting cables and the copper stabilizer components, such as those that could be present in the machine. We evaluate the critical defect length limiting the maximum allowable current for powering th...

  7. Optoelectronic engineering of colloidal quantum-dot solar cells beyond the efficiency black hole: a modeling approach

    Science.gov (United States)

    Mahpeykar, Seyed Milad; Wang, Xihua

    2017-02-01

    Colloidal quantum dot (CQD) solar cells have been under the spotlight in recent years mainly due to their potential for low-cost solution-processed fabrication and efficient light harvesting through multiple exciton generation (MEG) and tunable absorption spectrum via the quantum size effect. Despite the impressive advances achieved in charge carrier mobility of quantum dot solids and the cells' light trapping capabilities, the recent progress in CQD solar cell efficiencies has been slow, leaving them behind other competing solar cell technologies. In this work, using comprehensive optoelectronic modeling and simulation, we demonstrate the presence of a strong efficiency loss mechanism, here called the "efficiency black hole", that can significantly hold back the improvements achieved by any efficiency enhancement strategy. We prove that this efficiency black hole is the result of sole focus on enhancement of either light absorption or charge extraction capabilities of CQD solar cells. This means that for a given thickness of CQD layer, improvements accomplished exclusively in optic or electronic aspect of CQD solar cells do not necessarily translate into tangible enhancement in their efficiency. The results suggest that in order for CQD solar cells to come out of the mentioned black hole, incorporation of an effective light trapping strategy and a high quality CQD film at the same time is an essential necessity. Using the developed optoelectronic model, the requirements for this incorporation approach and the expected efficiencies after its implementation are predicted as a roadmap for CQD solar cell research community.

  8. Implementation of interconnect simulation tools in spice

    Science.gov (United States)

    Satsangi, H.; Schutt-Aine, J. E.

    1993-01-01

    Accurate computer simulation of high speed digital computer circuits and communication circuits requires a multimode approach to simulate both the devices and the interconnects between devices. Classical circuit analysis algorithms (lumped parameter) are needed for circuit devices and the network formed by the interconnected devices. The interconnects, however, have to be modeled as transmission lines which incorporate electromagnetic field analysis. An approach to writing a multimode simulator is to take an existing software package which performs either lumped parameter analysis or field analysis and add the missing type of analysis routines to the package. In this work a traditionally lumped parameter simulator, SPICE, is modified so that it will perform lossy transmission line analysis using a different model approach. Modifying SPICE3E2 or any other large software package is not a trivial task. An understanding of the programming conventions used, simulation software, and simulation algorithms is required. This thesis was written to clarify the procedure for installing a device into SPICE3E2. The installation of three devices is documented and the installations of the first two provide a foundation for installation of the lossy line which is the third device. The details of discussions are specific to SPICE, but the concepts will be helpful when performing installations into other circuit analysis packages.

  9. Structure-dependent behavior of stress-induced voiding in Cu interconnects

    International Nuclear Information System (INIS)

    Wu Zhenyu; Yang Yintang; Chai Changchun; Li Yuejin; Wang Jiayou; Li Bin; Liu Jing

    2010-01-01

    Stress modeling and cross-section failure analysis by focused-ion-beam have been used to investigate stress-induced voiding phenomena in Cu interconnects. The voiding mechanism and the effect of the interconnect structure on the stress migration have been studied. The results show that the most concentrated tensile stress appears and voids form at corners of vias on top surfaces of Cu M1 lines. A simple model of stress induced voiding in which vacancies arise due to the increase of the chemical potential under tensile stress and diffuse under the force of stress gradient along the main diffusing path indicates that stress gradient rather than stress itself determines the voiding rate. Cu interconnects with larger vias show less resistance to stress-induced voiding due to larger stress gradient at corners of vias.

  10. Reliability of spring interconnects for high channel-count polyimide electrode arrays

    Science.gov (United States)

    Khan, Sharif; Ordonez, Juan Sebastian; Stieglitz, Thomas

    2018-05-01

    Active neural implants with a high channel-count need robust and reliable operational assembly for the targeted environment in order to be classified as viable fully implantable systems. The discrete functionality of the electrode array and the implant electronics is vital for intact assembly. A critical interface exists at the interconnection sites between the electrode array and the implant electronics, especially in hybrid assemblies (e.g. retinal implants) where electrodes and electronics are not on the same substrate. Since the interconnects in such assemblies cannot be hermetically sealed, reliable protection against the physiological environment is essential for delivering high insulation resistance and low defusibility of salt ions, which are limited in complexity by current assembly techniques. This work reports on a combination of spring-type interconnects on a polyimide array with silicone rubber gasket insulation for chronically active implantable systems. The spring design of the interconnects on the backend of the electrode array compensates for the uniform thickness of the sandwiched gasket during bonding in assembly and relieves the propagation of extrinsic stresses to the bulk polyimide substrate. The contact resistance of the microflex-bonded spring interconnects with the underlying metallized ceramic test vehicles and insulation through the gasket between adjacent contacts was investigated against the MIL883 standard. The contact and insulation resistances remained stable in the exhausting environmental conditions.

  11. Functional neuroanatomy of amygdalohippocampal interconnections and their role in learning and memory.

    Science.gov (United States)

    McDonald, Alexander J; Mott, David D

    2017-03-01

    The amygdalar nuclear complex and hippocampal/parahippocampal region are key components of the limbic system that play a critical role in emotional learning and memory. This Review discusses what is currently known about the neuroanatomy and neurotransmitters involved in amygdalo-hippocampal interconnections, their functional roles in learning and memory, and their involvement in mnemonic dysfunctions associated with neuropsychiatric and neurological diseases. Tract tracing studies have shown that the interconnections between discrete amygdalar nuclei and distinct layers of individual hippocampal/parahippocampal regions are robust and complex. Although it is well established that glutamatergic pyramidal cells in the amygdala and hippocampal region are the major players mediating interconnections between these regions, recent studies suggest that long-range GABAergic projection neurons are also involved. Whereas neuroanatomical studies indicate that the amygdala only has direct interconnections with the ventral hippocampal region, electrophysiological studies and behavioral studies investigating fear conditioning and extinction, as well as amygdalar modulation of hippocampal-dependent mnemonic functions, suggest that the amygdala interacts with dorsal hippocampal regions via relays in the parahippocampal cortices. Possible pathways for these indirect interconnections, based on evidence from previous tract tracing studies, are discussed in this Review. Finally, memory disorders associated with dysfunction or damage to the amygdala, hippocampal region, and/or their interconnections are discussed in relation to Alzheimer's disease, posttraumatic stress disorder (PTSD), and temporal lobe epilepsy. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

  12. Reliability analysis of magnetic logic interconnect wire subjected to magnet edge imperfections

    Science.gov (United States)

    Zhang, Bin; Yang, Xiaokuo; Liu, Jiahao; Li, Weiwei; Xu, Jie

    2018-02-01

    Nanomagnet logic (NML) devices have been proposed as one of the best candidates for the next generation of integrated circuits thanks to its substantial advantages of nonvolatility, radiation hardening and potentially low power. In this article, errors of nanomagnetic interconnect wire subjected to magnet edge imperfections have been evaluated for the purpose of reliable logic propagation. The missing corner defects of nanomagnet in the wire are modeled with a triangle, and the interconnect fabricated with various magnetic materials is thoroughly investigated by micromagnetic simulations under different corner defect amplitudes and device spacings. The results show that as the defect amplitude increases, the success rate of logic propagation in the interconnect decreases. More results show that from the interconnect wire fabricated with materials, iron demonstrates the best defect tolerance ability among three representative and frequently used NML materials, also logic transmission errors can be mitigated by adjusting spacing between nanomagnets. These findings can provide key technical guides for designing reliable interconnects. Project supported by the National Natural Science Foundation of China (No. 61302022) and the Scientific Research Foundation for Postdoctor of Air Force Engineering University (Nos. 2015BSKYQD03, 2016KYMZ06).

  13. Construction of programmable interconnected 3D microfluidic networks

    International Nuclear Information System (INIS)

    Hunziker, Patrick R; Wolf, Marc P; Wang, Xueya; Zhang, Bei; Marsch, Stephan; Salieb-Beugelaar, Georgette B

    2015-01-01

    Microfluidic systems represent a key-enabling platform for novel diagnostic tools for use at the point-of-care in clinical contexts as well as for evolving single cell diagnostics. The design of 3D microfluidic systems is an active field of development, but construction of true interconnected 3D microfluidic networks is still a challenge, in particular when the goal is rapid prototyping, accurate design and flexibility. We report a novel approach for the construction of programmable 3D microfluidic systems consisting of modular 3D template casting of interconnected threads to allow user-programmable flow paths and examine its structural characteristics and its modular function. To overcome problems with thread template casting reported in the literature, low-surface-energy polymer threads were used, that allow solvent-free production. Connected circular channels with excellent roundness and low diameter variability were created. Variable channel termination allowed programming a flow path on-the-fly, thus rendering the resulting 3D microfluidic systems highly customizable even after production. Thus, construction of programmable/reprogrammable fully 3D microfluidic systems by template casting of a network of interconnecting threads is feasible, leads to high-quality and highly reproducible, complex 3D geometries. (paper)

  14. LHC beampipe interconnection

    CERN Document Server

    Particle beams circulate for around 10 hours in the Large Hadron Collider (LHC). During this time, the particles make four hundred million revolutions of the machine, travelling a distance equivalent to the diameter of the solar system. The beams must travel in a pipe which is emptied of air, to avoid collisions between the particles and air molecules (which are considerably bigger than protons). The beam pipes are pumped down to an air pressure similar to that on the surface of the moon. Much of the LHC runs at 1.9 degrees above absolute zero. When material is cooled, it contracts. The interconnections must absorb this contraction whilst maintaining electrical connectivity.

  15. Reliable, Low Cost Distributed Generator/Utility System Interconnect: 2001 Annual Report

    Energy Technology Data Exchange (ETDEWEB)

    2003-08-01

    This report details a research program to develop requirements that support the definition, design, and demonstration of a distributed generation-electric power system interconnection interface concept that allows distributed generation to be interconnected to the electric power system in a manner that provides value to end users without compromising reliability and performance.

  16. Robust microfabricated interconnect technologies: DC to THz, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — In recent years, Nuvotronics has developed state-of-the art antenna array and SSPA technologies at microwave and mmW frequencies with NASA funding through the SBIR...

  17. Design of a dual-axis optoelectronic level for precision angle measurements

    International Nuclear Information System (INIS)

    Fan, Kuang-Chao; Wang, Tsung-Han; Lin, Sheng-Yi; Liu, Yen-Chih

    2011-01-01

    The accuracy of machine tools is mainly determined by angular errors during linear motion according to the well-known Abbe principle. Precision angle measurement is important to precision machines. This paper presents the theory and experiments of a new dual-axis optoelectronic level with low cost and high precision. The system adopts a commercial DVD pickup head as the angle sensor in association with the double-layer pendulum mechanism for two-axis swings, respectively. In data processing with a microprocessor, the measured angles of both axes can be displayed on an LCD or exported to an external PC. Calibrated by a triple-beam laser angular interferometer, the error of the dual-axis optoelectronic level is better than ±0.7 arcsec in the measuring range of ±30 arcsec, and the settling time is within 0.5 s. Experiments show the applicability to the inspection of precision machines

  18. Modeling of Ni Diffusion Induced Austenite Formation in Ferritic Stainless Steel Interconnects

    DEFF Research Database (Denmark)

    Chen, Ming; Alimadadi, Hossein; Molin, Sebastian

    2017-01-01

    Ferritic stainless steel interconnect plates are widely used in planar solid oxide fuel cell and electrolysis cell stacks. During stack production and operation, nickel from the Ni/yttria stabilized zirconia fuel electrode or from the Ni contact component layer diffuses into the interconnect plate......, causing transformation of the ferritic phase into an austenitic phase in the interface region. This is accompanied with changes in volume, and in mechanical and corrosion properties of the interconnect plates. In this work, kinetic modeling of the inter-diffusion between Ni and FeCr based ferritic...

  19. One-step fabrication of microfluidic chips with in-plane, adhesive-free interconnections

    DEFF Research Database (Denmark)

    Sabourin, David; Dufva, Martin; Jensen, Thomas Glasdam

    2010-01-01

    A simple method for creating interconnections to a common microfluidic device material, poly(methyl methacrylate) (PMMA), is presented. A press-fit interconnection is created between oversized, deformable tubing and complementary, undersized semi-circular ports fabricated into PMMA bonding surfac...

  20. EEG simulation by 2D interconnected chaotic oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Kubany, Adam, E-mail: adamku@bgu.ac.i [Department of Industrial Engineering and Management, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel); Mhabary, Ziv; Gontar, Vladimir [Department of Industrial Engineering and Management, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel)

    2011-01-15

    Research highlights: ANN of 2D interconnected chaotic oscillators is explored for EEG simulation. An inverse problem solution (PRCGA) is proposed. Good matching between the simulated and experimental EEG signals has been achieved. - Abstract: An artificial neuronal network composed by 2D interconnected chaotic oscillators is explored for brain waves (EEG) simulation. For the inverse problem solution a parallel real-coded genetic algorithm (PRCGA) is proposed. In order to conduct thorough comparison between the simulated and target signal characteristics, a spectrum analysis of the signals is undertaken. A good matching between the theoretical and experimental EEG signals has been achieved. Numerical results of calculations are presented and discussed.