WorldWideScience

Sample records for optoelectronic devices

  1. Materials for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  2. Deformable paper origami optoelectronic devices

    KAUST Repository

    He, Jr-Hau

    2017-01-19

    Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a deformable pattern. Thin electrode layers and semiconductor nanowire layers can be attached to the substrate, creating the optoelectronic device. The devices can be highly deformable, e.g. capable of undergoing strains of 500% or more, bending angles of 25° or more, and/or twist angles of 270° or more. Methods of making the deformable optoelectronic devices and methods of using, e.g. as a photodetector, are also provided.

  3. Nanofabrication of Hybrid Optoelectronic Devices

    Science.gov (United States)

    Dibos, Alan Michael

    The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can yield a nanoscale solar cell, and modeling of optical absorption and exciton diffusion in this device can provide insight into the efficiency of charge separation. Second, we use an on-chip nanowire light emitting diode to pump a colloidal quantum dot coupled to a silver waveguide. The resulting device is an electro-optic single plasmon source. Finally, we transfer diamond waveguides onto near-field avalanche photodiodes fabricated from GaAs. Embedded in the diamond waveguides are nitrogen vacancy color centers, and the mapping of emission from these single-photon sources is demonstrated using our on-chip detectors, eliminating the need for external photodetectors on an optical table. These studies show the promise of hybrid optoelectronic devices at the nanoscale with applications in alternative energy, optical communication, and quantum optics.

  4. Small Molecule Organic Optoelectronic Devices

    Science.gov (United States)

    Bakken, Nathan

    Organic optoelectronics include a class of devices synthesized from carbon containing 'small molecule' thin films without long range order crystalline or polymer structure. Novel properties such as low modulus and flexibility as well as excellent device performance such as photon emission approaching 100% internal quantum efficiency have accelerated research in this area substantially. While optoelectronic organic light emitting devices have already realized commercial application, challenges to obtain extended lifetime for the high energy visible spectrum and the ability to reproduce natural white light with a simple architecture have limited the value of this technology for some display and lighting applications. In this research, novel materials discovered from a systematic analysis of empirical device data are shown to produce high quality white light through combination of monomer and excimer emission from a single molecule: platinum(II) bis(methyl-imidazolyl)toluene chloride (Pt-17). Illumination quality achieved Commission Internationale de L'Eclairage (CIE) chromaticity coordinates (x = 0.31, y = 0.38) and color rendering index (CRI) > 75. Further optimization of a device containing Pt-17 resulted in a maximum forward viewing power efficiency of 37.8 lm/W on a plain glass substrate. In addition, accelerated aging tests suggest high energy blue emission from a halogen-free cyclometalated platinum complex could demonstrate degradation rates comparable to known stable emitters. Finally, a buckling based metrology is applied to characterize the mechanical properties of small molecule organic thin films towards understanding the deposition kinetics responsible for an elastic modulus that is both temperature and thickness dependent. These results could contribute to the viability of organic electronic technology in potentially flexible display and lighting applications. The results also provide insight to organic film growth kinetics responsible for optical

  5. Progress of Si-based Optoelectronic Devices

    Institute of Scientific and Technical Information of China (English)

    PENG Ying-cai; FU Guang-sheng; WANG Ying-long; SHANG Yong

    2004-01-01

    Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize ali-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si-based optoelectronic devices, such as light-emitting diodes,optical waveguides devices, Si photonic bandgap crystals,and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.

  6. Organic optoelectronics:materials,devices and applications

    Institute of Scientific and Technical Information of China (English)

    LIU Yi; CUI Tian-hong

    2005-01-01

    The interest in organic materials for optoelectronic devices has been growing rapidly in the last two decades. This growth has been propelled by the exciting advances in organic thin films for displays, low-cost electronic circuits, etc. An increasing number of products employing organic electronic devices have become commercialized, which has stimulated the age of organic optoelectronics. This paper reviews the recent progress in organic optoelectronic technology. First, organic light emitting electroluminescent materials are introduced. Next, the three kinds of most important organic optoelectronic devices are summarized, including light emitting diode, organic photovoltaic cell, and photodetectors. The various applications of these devices are also reviewed and discussed in detail. Finally, the market and future development of optoelectronic devices are also demonstrated.

  7. Metamaterial mirrors in optoelectronic devices

    KAUST Repository

    Esfandyarpour, Majid

    2014-06-22

    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

  8. Wrapped optoelectronic devices and methods for making same

    Energy Technology Data Exchange (ETDEWEB)

    Curran, Seamus; Dias, Sampath; Alley, Nigel; Haldar, Amrita; Yambem, Soniya Devi; Kang-Shyang, Liao; Chaudhari, Prajakta

    2017-07-11

    In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wrap around a central axis wherein the cell includes a first conductive layer, a semi-conductive layer disposed over and in electrical communication with the first conductive layer, and a second conductive layer disposed over and in electrical communication with the semi-conductive layer. In various embodiments, methods for making optoelectronic devices are described herein. The methods may include forming an optoelectronic cell while flat and wrapping the optoelectronic cell around a central axis. The optoelectronic devices may be photovoltaic devices. Alternatively, the optoelectronic devices may be organic light emitting diodes.

  9. Radiation effects in optoelectronic devices. [Review

    Energy Technology Data Exchange (ETDEWEB)

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given.

  10. Optoelectronic Devices Advanced Simulation and Analysis

    CERN Document Server

    Piprek, Joachim

    2005-01-01

    Optoelectronic devices transform electrical signals into optical signals and vice versa by utilizing the sophisticated interaction of electrons and light within micro- and nano-scale semiconductor structures. Advanced software tools for design and analysis of such devices have been developed in recent years. However, the large variety of materials, devices, physical mechanisms, and modeling approaches often makes it difficult to select appropriate theoretical models or software packages. This book presents a review of devices and advanced simulation approaches written by leading researchers and software developers. It is intended for scientists and device engineers in optoelectronics, who are interested in using advanced software tools. Each chapter includes the theoretical background as well as practical simulation results that help to better understand internal device physics. The software packages used in the book are available to the public, on a commercial or noncommercial basis, so that the interested r...

  11. Contemporary optoelectronics materials, metamaterials and device applications

    CERN Document Server

    Sukhoivanov, Igor

    2016-01-01

    This book presents a collection of extended contributions on the physics and application of optoelectronic materials and metamaterials.   The book is divided into three parts, respectively covering materials, metamaterials and optoelectronic devices.  Individual chapters cover topics including phonon-polariton interaction, semiconductor and nonlinear organic materials, metallic, dielectric and gyrotropic metamaterials, singular optics, parity-time symmetry, nonlinear plasmonics, microstructured optical fibers, passive nonlinear shaping of ultrashort pulses, and pulse-preserving supercontinuum generation. The book contains both experimental and theoretical studies, and each contribution is a self-contained exposition of a particular topic, featuring an extensive reference list.  The book will be a useful resource for graduate and postgraduate students, researchers and engineers involved in optoelectronics/photonics, quantum electronics, optics, and adjacent areas of science and technology.

  12. Multi-material optoelectronic fiber devices

    Science.gov (United States)

    Sorin, F.; Yan, Wei; Volpi, Marco; Page, Alexis G.; Nguyen Dang, Tung; Qu, Y.

    2017-05-01

    The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In particular, the thermal drawing process has known a series of breakthroughs in recent years that have expanded the range of materials and architectures that can be engineered within uniform fibers. Of particular interest in this presentation will be optoelectronic fibers that integrate semiconductors electrically addressed by conducting materials. These long, thin and flexible fibers can intercept optical radiation, localize and inform on a beam direction, detect its wavelength and even harness its energy. They hence constitute ideal candidates for applications such as remote and distributed sensing, large-area optical-detection arrays, energy harvesting and storage, innovative health care solutions, and functional fabrics. To improve performance and device complexity, tremendous progresses have been made in terms of the integrated semiconductor architectures, evolving from large fiber solid-core, to sub-hundred nanometer thin-films, nano-filaments and even nanospheres. To bridge the gap between the optoelectronic fiber concept and practical applications however, we still need to improve device performance and integration. In this presentation we will describe the materials and processing approaches to realize optoelectronic fibers, as well as give a few examples of demonstrated systems for imaging as well as light and chemical sensing. We will then discuss paths towards practical applications focusing on two main points: fiber connectivity, and improving the semiconductor microstructure by developing scalable approaches to make fiber-integrated single-crystal nanowire based devices.

  13. Focused Ion Beam Technology for Optoelectronic Devices

    Science.gov (United States)

    Reithmaier, J. P.; Bach, L.; Forchel, A.

    2003-08-01

    High-resolution proximity free lithography was developed using InP as anorganic resist for ion beam exposure. InP is very sensitive on ion beam irradiation and show a highly nonlinear dose dependence with a contrast function comparable to organic electron beam resists. In combination with implantation induced quantum well intermixing this new lithographic technique based on focused ion beams is used to realize high performance nano patterned optoelectronic devices like complex coupled distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers.

  14. Functionalization of Semiconductor Nanomaterials for Optoelectronic Devices And Components

    Science.gov (United States)

    2015-03-04

    alternative for single quarter wavelength coating. Previous investigations on Ta2O5 include corrosion protection coating, electrochromic devices ...Functionalization of semiconductor nanomaterials for optoelectronic devices and components 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-10-1-0136 5c. PROGRAM...Distribution A 13. SUPPLEMENTARY NOTES None 14. ABSTRACT Various semiconductor nanomaterials were functionalized for optoelectronic devices , such

  15. Hybrid optoelectronic device with multiple bistable outputs

    Science.gov (United States)

    Costazo-Caso, Pablo A.; Jin, Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad

    2011-01-01

    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  16. Nanoscale selective area epitaxy for optoelectronic devices

    Science.gov (United States)

    Elarde, V. C.; Coleman, J. J.

    Self-assembled quantum dots have been heavily researched in recent years because of the potential applications to quantum electronic and optoelectronic devices they present. The non-uniformity and random ordering resulting from the self-assembly processes, however, are detrimental to potential applications, prohibiting the type of engineering control necessary for complex systems. The work presented in this document has sought to overcome the limitations of self-assembly by combining selective area epitaxy via MOCVD with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is patterned quantum dots which improve on the uniformity and order of similar self-assembled quantum dots. The second is an entirely novel structure, the nanopore active layer, which demonstrates the potential for this process to extend beyond the constraints of self-assembly. Experimental and theoretical results for both structures are presented.

  17. Multiple Quantum Well (MQW) Devices For Monolithic Integrated Optoelectronics

    Science.gov (United States)

    Wood, Thomas H.

    1988-05-01

    Semiconductor MQWs represent a new technology for opto-electronics. These MQWs have an electroabsorption effect approximately 50 times larger than conventional semiconductors. They are compatible with existing source and detector material systems and produce devices that are compact and high speed, which makes them useful for monolithic integrated optoelectronic devices.

  18. Device-packaging method and apparatus for optoelectronic circuits

    Energy Technology Data Exchange (ETDEWEB)

    Zortman, William A.; Henry, Michael David; Jarecki, Jr., Robert L.

    2017-04-25

    An optoelectronic device package and a method for its fabrication are provided. The device package includes a lid die and an active die that is sealed or sealable to the lid die and in which one or more optical waveguides are integrally defined. The active die includes one or more active device regions, i.e. integral optoelectronic devices or etched cavities for placement of discrete optoelectronic devices. Optical waveguides terminate at active device regions so that they can be coupled to them. Slots are defined in peripheral parts of the active dies. At least some of the slots are aligned with the ends of integral optical waveguides so that optical fibers or optoelectronic devices inserted in the slots can optically couple to the waveguides.

  19. Lasers and optoelectronics fundamentals, devices and applications

    CERN Document Server

    Maini, Anil K

    2013-01-01

    With emphasis on the physical and engineering principles, this book provides a comprehensive and highly accessible treatment of modern lasers and optoelectronics. Divided into four parts, it explains laser fundamentals, types of lasers, laser electronics & optoelectronics, and laser applications, covering each of the topics in their entirety, from basic fundamentals to advanced concepts. Key features include: exploration of technological and application-related aspects of lasers and optoelectronics, detailing both existing and emerging applications in industry, medical diag

  20. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    Science.gov (United States)

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  1. Emissive polymeric materials for optoelectronic devices

    Science.gov (United States)

    Shiang, Joseph John; Chichak, Kelly Scott; Cella, James Anthony; Lewis, Larry Neil; Janora, Kevin Henry

    2011-07-05

    Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

  2. Opto-electronic devices from block copolymers and their oligomers.

    NARCIS (Netherlands)

    Hadziioannou, G

    1997-01-01

    This paper presents research activities towards the development of polymer materials and devices for optoelectronics, An approach to controlling the conjugation length and transferring the luminescence properties of organic molecules to polymers through black copolymers containing well-defined conju

  3. Optoelectronic Device Integration in Silicon (OpSIS)

    Science.gov (United States)

    2015-10-26

    Delaware in the development of fundamental design tools and methodologies for optoelectronic devices in silicon photonics. We proposed to develop...THIS PAGE U 19b. TELEPHONE NUMBER (Include area code) 302-831-4241 Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std . Z39.18 Adobe...10-1-0439 Prime Award Institution: University of Washington Subaward Institution: University of Delaware Title: Optoelectronic Device

  4. Materials for optoelectronic devices, OEICs and photonics

    Energy Technology Data Exchange (ETDEWEB)

    Schloetterer, H.; Quillec, M.; Greene, P.D.; Bertolotti, M. (eds.)

    1991-01-01

    The aim of the contributors in this volume is to give a current overview on the basic properties of nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques from growth (LPE to MOMBE) and for processing from surface passivation to ion beams. Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic materials development, as well as indicating the growth techniques that will be in use around the year 2000.

  5. Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

    Science.gov (United States)

    Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

    2016-06-01

    Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Optoelectronic devices, plasmonics, and photonics with topological insulators

    Science.gov (United States)

    Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

    2017-03-01

    Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

  7. Terahertz biochip based on optoelectronic devices

    Science.gov (United States)

    Lu, Ja-Yu; Chen, Li-Jin; Kao, Tzeng-Fu; Chang, Hsu-Hao; Liu, An-Shyi; Yu, Yi-Chun; Wu, Ruey-Beei; Liu, Wei-Sheng; Chyi, Jen-Inn; Pan, Ci-Ling; Tsai, Ming-Cheng; Sun, Chi-Kuang

    2005-10-01

    The accurate detection of minute amounts of chemical and biological substances has been a major goal in bioanalytical technology throughout the twentieth century. Fluorescence dye labeling detection remains the effective analysis method, but it modifies the surroundings of molecules and lowering the precision of detection. An alternative label free detecting tool with little disturbance of target molecules is highly desired. Theoretical calculations and experiments have demonstrated that many biomolecules have intrinsic resonance due to vibration or rotation level transitions, allowing terahertz (THz)-probing technique as a potential tool for the label-free and noninvasive detection of biomolecules. In this paper, we first ever combined the THz optoelectronic technique with biochip technology to realize THz biosensing. By transferring the edge-coupled photonic transmitter into a thin glass substrate and by integrating with a polyethylene based biochip channel, near field THz detection of the biomolecules is demonstrated. By directly acquiring the absorption micro-spectrum in the THz range, different boiomecules can then be identified according to their THz fingerprints. For preliminary studies, the capability to identity different illicit drug powders is successfully demonstrated. This novel biochip sensing system has the advantages including label-free detection, high selectivity, high sensitivity, ease for sample preparation, and ease to parallel integrate with other biochip functionality modules. Our demonstrated detection capability allows specifying various illicit drug powders with weight of nano-gram, which also enables rapid identification with minute amounts of other important molecules including DNA, biochemical agents in terrorism warfare, explosives, viruses, and toxics.

  8. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2012-10-30

    ... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... Singapore; and Avago Technologies U.S. Inc. of San Jose, California. Letters supplementing the complaint... the United States after importation of certain optoelectronic devices for fiber optic...

  9. Organic semiconductors as candidates for advanced optoelectronic devices:

    OpenAIRE

    Bratina, Gvido; Hudej, Robert

    2001-01-01

    Organic semiconductors are gaining an increasing attention due to their promise of novel optoelectronic devices. The main attraction of these materials stems from their potential integration with flexible materials, which would result in ultrathin flexible multicolor displays. Basic electronic properties of typical representatives of organic semiconductors are reviewed. The operation of a light-emitting device based on organic semiconductors is fundamentally different from its inorganic count...

  10. Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures

    OpenAIRE

    Chu, Sheng

    2011-01-01

    Optoelectronics devices based on ZnO thin films and nanostructures are discussed in this dissertation. A ZnO homojunction LED was demonstrated. Sb-doped p-type ZnO and Ga-doped n-type ZnO on Si (100) substrate were used for the LED device. After achieving ohmic contacts on both types of ZnO, the device showed rectifying current-voltage (I-V) characteristics. Under forward bias, the device successfully showed ultraviolet emissions. The emission properties were analyzed and the emission was con...

  11. Patterning of conjugated polymers for organic optoelectronic devices.

    Science.gov (United States)

    Xu, Youyong; Zhang, Fan; Feng, Xinliang

    2011-05-23

    Conjugated polymers have been attracting more and more attention because they possess various novel electrical, magnetical, and optical properties, which render them useful in modern organic optoelectronic devices. Due to their organic nature, conjugated polymers are light-weight and can be fabricated into flexible appliances. Significant research efforts have been devoted to developing new organic materials to make them competitive with their conventional inorganic counterparts. It is foreseeable that when large-scale industrial manufacture of the devices made from organic conjugated polymers is feasible, they would be much cheaper and have more functions. On one hand, in order to improve the performance of organic optoelectronic devices, it is essential to tune their surface morphologies by techniques such as patterning. On the other hand, patterning is the routine requirement for device processing. In this review, the recent progress in the patterning of conjugated polymers for high-performance optoelectronic devices is summarized. Patterning based on the bottom-up and top-down methods are introduced. Emerging new patterning strategies and future trends for conventional patterning techniques are discussed.

  12. Conjugated polymers and their use in optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

    2016-10-18

    The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  13. III-V compound SC for optoelectronic devices

    Directory of Open Access Journals (Sweden)

    Sudha Mokkapati

    2009-04-01

    Full Text Available III-V compound semiconductors (SC have played a crucial role in the development of optoelectronic devices for a broad range of applications. Major applications of InP or GaAs based III-V compound SC are devices for optical fiber communications, infrared and visible LEDs/LDs and high efficiency solar cells. GaN based compounds are extremely important for short wavelength light emitters used in solid state lighting systems. We review the important device applications of various III-V compound SC materials.

  14. Electronic and optoelectronic nano-devices based on carbon nanotubes.

    Science.gov (United States)

    Scarselli, M; Castrucci, P; De Crescenzi, M

    2012-08-08

    The discovery and understanding of nanoscale phenomena and the assembly of nanostructures into different devices are among the most promising fields of material science research. In this scenario, carbon nanostructures have a special role since, in having only one chemical element, they allow physical properties to be calculated with high precision for comparison with experiment. Carbon nanostructures, and carbon nanotubes (CNTs) in particular, have such remarkable electronic and structural properties that they are used as active building blocks for a large variety of nanoscale devices. We review here the latest advances in research involving carbon nanotubes as active components in electronic and optoelectronic nano-devices. Opportunities for future research are also identified.

  15. Indium phosphide nanowires and their applications in optoelectronic devices

    OpenAIRE

    2016-01-01

    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In t...

  16. Microscopic theory of semiconductor-based optoelectronic devices

    Science.gov (United States)

    Iotti, Rita C.; Rossi, Fausto

    2005-11-01

    Since the seminal paper by Esaki and Tsu, semiconductor-based nanometric heterostructures have been the subject of impressive theoretical and experimental activity due to their high potential impact in both fundamental research and device technology. The steady scaling down of typical space and time scales in quantum optoelectronic systems inevitably leads to a regime in which the validity of the traditional Boltzmann transport theory cannot be taken for granted and a more general quantum-transport description is imperative. In this paper, we shall review state-of-the-art approaches used in the theoretical modelling, design and optimization of optoelectronic quantum devices. The primary goal is to provide a cohesive treatment of basic quantum-transport effects, able to explain and predict the performances of new-generation semiconductor devices. With this aim, we shall review and discuss a fully three-dimensional microscopic treatment of time-dependent as well as steady-state quantum-transport phenomena, based on the density matrix formalism. This will allow us to introduce in a quite natural way the separation between coherent and incoherent processes. Starting with this general theoretical framework, we shall analyse two different types of quantum devices, namely periodically repeated structures and quantum systems with open boundaries. For devices within the first class, we will show how a proper use of periodic boundary conditions allows us to reproduce and predict their current-voltage characteristics without resorting to phenomenological parameters. For the second class of devices, we will address the relevant issue of a quantum treatment of charge transport in systems with open boundaries (electrical contacts) when studying and simulating an at least two-terminal device.

  17. Wonder of nanotechnology quantum optoelectronic devices and applications

    CERN Document Server

    Razeghi, Manijeh; von Klitzing, Klaus

    2013-01-01

    When you look closely, Nature is nanotechnology at its finest. From a single cell, a factory all by itself, to complex systems, such as the nervous system or the human eye, each is composed of specialized nanostructures that exist to perform a specific function. This same beauty can be mirrored when we interact with the tiny physical world that is the realm of quantum mechanics.The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, edited by Manijeh Razeghi, Leo Esaki, and Klaus von Klitzing focuses on the application of nanotechnology to modern semiconductor optoelectr

  18. Impact of optical antennas on active optoelectronic devices.

    Science.gov (United States)

    Bonakdar, Alireza; Mohseni, Hooman

    2014-10-07

    Remarkable progress has been made in the fabrication and characterization of optical antennas that are integrated with optoelectronic devices. Herein, we describe the fundamental reasons for and experimental evidence of the dramatic improvements that can be achieved by enhancing the light-matter interaction via an optical antenna in both photon-emitting and -detecting devices. In addition, integration of optical antennas with optoelectronic devices can lead to the realization of highly compact multifunctional platforms for future integrated photonics, such as low-cost lab-on-chip systems. In this review paper, we further focus on the effect of optical antennas on the detectivity of infrared photodetectors. One particular finding is that the antenna can have a dual effect on the specific detectivity, while it can elevate light absorption efficiency of sub-wavelength detectors, it can potentially increase the noise of the detectors due to the enhanced spontaneous emission rate. In particular, we predict that the detectivity of interband photon detectors can be negatively affected by the presence of optical antennas across a wide wavelength region covering visible to long wavelength infrared bands. In contrast, the detectivity of intersubband detectors could be generally improved with a properly designed optical antenna.

  19. MOF-based electronic and opto-electronic devices.

    Science.gov (United States)

    Stavila, V; Talin, A A; Allendorf, M D

    2014-08-21

    Metal-organic frameworks (MOFs) are a class of hybrid materials with unique optical and electronic properties arising from rational self-assembly of the organic linkers and metal ions/clusters, yielding myriads of possible structural motifs. The combination of order and chemical tunability, coupled with good environmental stability of MOFs, are prompting many research groups to explore the possibility of incorporating these materials as active components in devices such as solar cells, photodetectors, radiation detectors, and chemical sensors. Although this field is only in its incipiency, many new fundamental insights relevant to integrating MOFs with such devices have already been gained. In this review, we focus our attention on the basic requirements and structural elements needed to fabricate MOF-based devices and summarize the current state of MOF research in the area of electronic, opto-electronic and sensor devices. We summarize various approaches to designing active MOFs, creation of hybrid material systems combining MOFs with other materials, and assembly and integration of MOFs with device hardware. Critical directions of future research are identified, with emphasis on achieving the desired MOF functionality in a device and establishing the structure-property relationships to identify and rationalize the factors that impact device performance.

  20. Growing perovskite into polymers for easy-processable optoelectronic devices

    Science.gov (United States)

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  1. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Science.gov (United States)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  2. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  3. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  4. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  5. Transparent electrode of nanoscale metal film for optoelectronic devices

    Science.gov (United States)

    Lee, Illhwan; Lee, Jong-Lam

    2015-01-01

    This paper reviews the principles, impediments, and recent progress in the development of ultrathin flexible Ag electrodes for use in flexible optoelectronic devices. Thin Ag-based electrodes are promising candidates for next-generation flexible transparent electrodes. Thin Ag-based electrodes that have a microcavity structure show the best device performance, but have relatively low optical transmittance (OT) due to reflection and absorption of photons by the thin Ag; this trait causes problems such as spectral narrowing and change of emission color with viewing angle in white organic light-emitting diodes. Thinning the Ag electrode to overcome these problems. This ultrathin Ag electrode has a high OT, while providing comparable sheet resistance similar to indium tin oxide. As the OT of the electrode increases, the cavity is weakened, so the spectral width of the emission and the angular color stability are increased.

  6. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...

  7. 78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2013-03-14

    ... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... complaint filed by Avago Technologies Fiber IP (Singapore) Pte. Ltd. of Singapore (``Avago Fiber IP... importation, or sale within the United States after importation of certain optoelectronic devices for...

  8. (Nanotechnology Initiative) Revision of Quantum Engineering of Nanostructures for Optoelectronic Devices with Optimum Performance

    Science.gov (United States)

    2011-10-11

    Colloidal Quantum Dots (QDs) in Optoelectronic Devices --- Solar Cells ...Li, Vaishnavi Narayanamurthy, Kitt Reinhardt, and Michael A. Stroscio, Colloidal Quantum Dots (QDs) in Optoelectronic Devices --- Solar Cells ...Mitra Dutta, and Michael A. Stroscio, Photodetector Based on GaN Double-Barrier Resonant Tunneling Diode Coupled with Colloidal Quantum Dots ,

  9. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...

  10. Charicteristic of a novel optoelectronic polymer and related device fabrication

    Institute of Scientific and Technical Information of China (English)

    SUN Jian-yuan; HE Zhi-qun; HAN Xiao; WANG Bin; WANG Yong-sheng; LlU Ying-liang; CAO Shao-kui

    2007-01-01

    In this paper a preliminary investigation of a novel optoelectronic polymer, poly (p-phenylene N-4-n-butylphenyl-N,N-bis-4-vinylenephenylamine) (PNB), is reported. A single layer structure of ITO/PNB/Al was prepared via spin-coating of PNB solution as a thin film on the top of an ITO substrate, while aluminum top electrode was vacuum evaporated. Dark currentvoltage characteristics of this device showed a typical rectifying behaviour. Photovoltaic response under a monochromatic illumination at 420 nm was observed, with an open circuit voltage of 0.3 V and fill factor of 0.21. Spectral response and optical absorption were found to be matched well. It was also discovered that the device showed a green electroluminescent emission at a forward bias. Turn-on voltage of the device was about 6 V and light output about 22.6 nW at a forward bias of 10 V. The work demonstrated that the PNB material might possess dual exciton sites resulting in a competition for excitons to be either separated or recombined. Both effects were associated with each other, which limited the photovoltaic or electroluminescence to some degrees.

  11. Electronic and optoelectronic materials and devices inspired by nature.

    Science.gov (United States)

    Meredith, P; Bettinger, C J; Irimia-Vladu, M; Mostert, A B; Schwenn, P E

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  12. Electronic and optoelectronic materials and devices inspired by nature

    Science.gov (United States)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  13. Nonlinear Optics in Optoelectronic Integration with Some Novel Waveguide Devices.

    Science.gov (United States)

    Vakhshoori, Daryoosh

    By integration we mean realizing an integrable solution to existing discrete devices which perform some useful operation. Systems are built from these functional parts. System integration requires compatible integration of these parts. At present the most important example that also relates to our work is communication systems. For this system to work reliably, the optical pulses should be stable in time and shape (small time and amplitude jitter.) The devices that measure these properties are optical correlators. These devices are bulky, occupying a cubic foot of volume with no satisfactory integrable counterpart. Here we present an integrable waveguide correlator which experimentally measured pulses from 150fsec to 12psec with an average guide power of sub mW to 2mW in the spectral range of 1.7mum to 1.06mu m. All these measurements were performed on the same waveguide structure without mechanical movements where the spectral range was limited to the band gap of the waveguide material, GaAs in our case. The other communication scheme uses wavelength division multiplexing. Optical spectrometers are ~1 meter long devices capable of 0.1A spectral resolution. Again, like correlators, there is no satisfactory integrable counterpart. In this thesis, we present an integrable parametric waveguide spectrometer capable of measuring individual modes of semiconductor laser diodes and their movement as a function of laser current. For our experiments, the resolving power of the waveguide device was about 3A and is easily extendible to the sub A range. It should be pointed out that these spectrometer devices can also be used in stabilizing laser diode frequencies which are required for the realization of reliable wavelength division multiplexed systems. Last, but not least, a possible coherent visible surface emitting waveguide device capable of mW range powers is also presented. The motivation for this study is the ever growing market for shorter wavelength semiconductor

  14. Light Management in Optoelectronic Devices with Disordered and Chaotic Structures

    KAUST Repository

    Khan, Yasser

    2012-07-01

    With experimental realization, energy harvesting capabilities of chaotic microstructures were explored. Incident photons falling into chaotic trajectories resulted in energy buildup for certain frequencies. As a consequence, many fold enhancement in light trapping was observed. These ellipsoid like chaotic microstructures demonstrated 25% enhancement in light trapping at 450nm excitation and 15% enhancement at 550nm excitation. Optimization of these structures can drive novel chaos-assisted energy harvesting systems. In subsequent sections of the thesis, prospect of broadband light extraction from white light emitting diodes were investigated, which is an unchallenged but quintessential problem in solid-state lighting. Size dependent scattering allows microstructures to interact strongly with narrow-band light. If disorder is introduced in spread and sizes of microstructures, broadband light extraction is possible. A novel scheme with Voronoi tessellation to quantify disorder in physical systems was also introduced, and a link between voronoi disorder and state disorder of statistical mechanics was established. Overall, in this thesis some nascent concepts regarding disorder and chaos were investigated to efficiently manage electromagnetic waves in optoelectronic devices.

  15. A nanomesh scaffold for supramolecular nanowire optoelectronic devices

    Science.gov (United States)

    Zhang, Lei; Zhong, Xiaolan; Pavlica, Egon; Li, Songlin; Klekachev, Alexander; Bratina, Gvido; Ebbesen, Thomas W.; Orgiu, Emanuele; Samorì, Paolo

    2016-10-01

    Supramolecular organic nanowires are ideal nanostructures for optoelectronics because they exhibit both efficient exciton generation as a result of their high absorption coefficient and remarkable light sensitivity due to the low number of grain boundaries and high surface-to-volume ratio. To harvest photocurrent directly from supramolecular nanowires it is necessary to wire them up with nanoelectrodes that possess different work functions. However, devising strategies that can connect multiple nanowires at the same time has been challenging. Here, we report a general approach to simultaneously integrate hundreds of supramolecular nanowires of N,N‧-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) in a hexagonal nanomesh scaffold with asymmetric nanoelectrodes. Optimized PTCDI-C8 nanowire photovoltaic devices exhibit a signal-to-noise ratio approaching 107, a photoresponse time as fast as 10 ns and an external quantum efficiency >55%. This nanomesh scaffold can also be used to investigate the fundamental mechanism of photoelectrical conversion in other low-dimensional semiconducting nanostructures.

  16. 25th anniversary article: carbon nanotube- and graphene-based transparent conductive films for optoelectronic devices.

    Science.gov (United States)

    Du, Jinhong; Pei, Songfeng; Ma, Laipeng; Cheng, Hui-Ming

    2014-04-02

    Carbon nanotube (CNT)- and graphene (G)-based transparent conductive films (TCFs) are two promising alternatives for commonly-used indium tin oxide-based TCFs for future flexible optoelectronic devices. This review comprehensively summarizes recent progress in the fabrication, properties, modification, patterning, and integration of CNT- and G-TCFs into optoelectronic devices. Their potential applications and challenges in optoelectronic devices, such as organic photovoltaic cells, organic light emitting diodes and touch panels, are discussed in detail. More importantly, their key characteristics and advantages for use in these devices are compared. Despite many challenges, CNT- and G-TCFs have demonstrated great potential in various optoelectronic devices and have already been used for some products like touch panels of smartphones. This illustrates the significant opportunities for the industrial use of CNTs and graphene, and hence pushes nanoscience and nanotechnology one step towards practical applications.

  17. Growth on patterned substrates for optoelectronic device application

    Science.gov (United States)

    Gupta, Vinod Kumar

    In this thesis growth on patterned substrates has been studied for the lateral bandgap control of the quantum well (QW) structures, utilising indium migration from the side facets onto the adjoining (100) surfaces, leading to the possibility of integration of multi- functional optoelectronic devices. InGaAs/GaAs/AlGaAs single quantum well (SQW) lasers and InGaAs/InAlAs QW heterostructures were grown by molecular beam epitaxy (MBE) on (100) GaAs and InP substrates respectively, patterned to produce (100) mesa top surfaces with angled side facets. Chemical beam epitaxy (CBE) was used for the growth of InGaAs/InP heterostructures over InP substrates, patterned into undercut mesas with (100) top surfaces using chemically assisted ion beam etching (CAIBE). Indium migration behaviour was compared by growing two InGaAs/GaAs/AlGaAs SQW graded index separate confinement heterostructure (GRINSCH) lasers by MBE over patterned GaAs substrates. The first laser was grown using As2 throughout, whereas the active region of the second laser was grown using As4. It is observed that the use of As4 facilitates the migration process whilst the use of As2 completely stops it. However, the broad area devices of both lasers exhibit extremely low threshold current densities and very high external quantum efficiencies. Split contact devices were made by growing InGaAs/GaAs/AlGaAs SQW GRINSCH lasers by MBE over variable step width mesas patterned on GaAs substrates using a newly designed mask. Electrical measurements on partially pumped devices showed bistability or pulsation behaviour depending on the bias conditions on the unpumped section. Growth of InGaAs/InP heterostructures by CBE on undercut mesas showed facetting behaviour producing atomically flat (111)B planes. Complete triangular shape structures bounded by very smooth (111)B facets were produced on mesas as narrow as 2.0 [mu]m. This shows the strong possibility of growing one dimensional (1D) quantum wire structures, produced

  18. GaN nano-membrane for optoelectronic and electronic device applications

    KAUST Repository

    Ooi, Boon S.

    2014-01-01

    The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

  19. Integrated Graphene-Based Optoelectronic Devices Used for Ultrafast Optical-THz Photodetectors, Modulators and Emitters

    Science.gov (United States)

    2015-04-03

    AFRL-RV-PS- AFRL-RV-PS- TR-2015-0083 TR-2015-0083 INTEGRATED GRAPHENE -BASED OPTOELECTRONIC DEVICES USED FOR ULTRAFAST OPTICAL-THZ PHOTODETECTORS...From - To) 7 Nov 2011 – 12 Feb 2012 4. TITLE AND SUBTITLE Integrated Graphene -Based Optoelectronic Devices Used for Ultrafast Optical-THz...quasiparticles in graphene electrons, phlasmons and electron-hole pairs with the ultimate goal to convert them into or be extracted from terahertz

  20. Applications of HTSC films in hybrid optoelectronic devices

    Science.gov (United States)

    Pavuna, Davor

    1992-03-01

    An overview is given of potential applications of high-Tc superconductors (HTSC) in the context of hybrid optoelectronic technology. The main requirements are described for the in situ growth of epitaxial YBa2Cu3O(7-delta) (YBCO) films on SrTiO3 and discuss the properties of YBCO layers grown on Si and GaAs substrates with intermediate, conducting indium-tin-oxide buffer layers. The performances of the microbridge and the meander type of HTSC bolometer are compared, and several concepts are discussed that may become relevant for future hybrid optoelectronic technology.

  1. SEMICONDUCTOR DEVICES: CuPc/C60 heterojunction thin film optoelectronic devices

    Science.gov (United States)

    Murtaza, Imran; Qazi, Ibrahim; Karimov, Khasan S.

    2010-06-01

    The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C60/Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C60, where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons.

  2. Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

    Science.gov (United States)

    Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

    2015-05-01

    The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

  3. 78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Science.gov (United States)

    2013-12-20

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International...

  4. Ion beam synthesis of planar opto-electronic devices

    Science.gov (United States)

    Polman, A.; Snoeks, E.; van den Hoven, G. N.; Brongersma, M. L.; Serna, R.; Shin, J. H.; Kik, P.; Radius, E.

    1995-12-01

    Photonic technology requires the modification and synthesis of new materials and devices for the generation, guiding, switching, multiplexing and amplification of light. This paper reviews how some of these devices may be made using ion beam synthesis. Special attention is paid to the fabrication of erbium-doped optical waveguides.

  5. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    CERN Document Server

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  6. Semiconductor nanostructures for optoelectronic devices processing, characterization and applications

    CERN Document Server

    Yi, Gyu-Chul

    2012-01-01

    This book summarizes the current state of semiconductor nanodevice development, examining nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene and describing their device applications.

  7. Low-cost optoelectronic devices to measure velocity of detonation

    Science.gov (United States)

    Chan, Edwin M.; Lee, Vivian; Mickan, Samuel P.; Davies, Phil J.

    2005-02-01

    Velocity of Detonation (VoD) is an important measured characteristic parameter of explosive materials. When new explosives are developed, their VoD must be determined. Devices used to measure VoD are always destroyed in the process, however replacing these devices represents a considerable cost in the characterisation of new explosives. This paper reports the design and performance of three low-cost implementations of a point-to-point VoD measurement system, two using optical fibre and a third using piezoelectric polymers (PolyVinyliDine Flouride, PVDF). The devices were designed for short charges used under controlled laboratory conditions and were tested using the common explosive 'Composition B'. These new devices are a fraction of the cost of currently available VoD sensors and show promise in achieving comparable accuracy. Their future development will dramatically reduce the cost of testing and aid the characterisation of new explosives.

  8. Micro- and nano-scale optoelectronic devices using vanadium dioxide

    Science.gov (United States)

    Joushaghani, Arash

    Miniaturization has the potential to reduce the size, cost, and power requirements of active optical devices. However, implementing (sub)wavelength-scale electro-optic switches with high efficiency, low insertion loss, and high extinction ratios remains challenging due to their small active volumes. Here, we use the insulator-metal phase transition of vanadium dioxide (VO2), which exhibits a large and reversible change in the refractive index across the phase transition to demonstrate compact, broadband, and efficient switches and photodetectors with record-setting characteristics. We begin by analyzing the electrical and optical properties of VO2 thin films across the phase transition and discuss the fabrication processes that yield micron- and nano-scale VO2 devices. We then demonstrate a surface plasmon thermo-optic switch, which achieves an extinction ratio of 10 dB in a 5 um long device, a record for plasmonic devices. The switch operates over a 100 nm optical bandwidth, and exhibits a thermally limited switching time of 40 mus. We investigate the current and voltage induced switching of VO2 in nano-gap junctions and show optical switching times as short as 20 ns. The two terminal VO2 junctions are incorporated in a silicon photonics platform to yield silicon-VO2 hybrid waveguide devices with a record extinction ratio of 12 dB in a 1 mum long device. In photodetector mode, the devices exhibit a nonlinear responsivity greater than 12 A/W for optical powers less than 1 muW. This device is the smallest electrically controlled and integrated switch and photodetector capable of achieving extinction ratios > 10 dB/mum. We finally investigate the ultra-fast thermal heating in gold nano-apertures and demonstrate that electron heating can change the gold lattice temperature by 300 K in tens of picoseconds. These nano-apertures can be hybridized with VO2 to demonstrate high extinction and ultrafast optical switches.

  9. Design of Optical Metamaterial Mirror with Metallic Nanoparticles for Broadband Light Absorption in Graphene Optoelectronic Devices

    CERN Document Server

    Lee, Seungwoo

    2015-01-01

    A general metallic mirror (i.e., a flat metallic surface) has been a popular optical component that can contribute broadband light absorption to thin-film optoelectronic devices; nonetheless, such electric mirror with a reversal of reflection phase inevitably causes the problem of minimized electric field near at the mirror surface (maximized electric field at one quarter of wavelength from mirror). This problem becomes more elucidated, when the deep-subwavelength-scaled two-dimensional (2D) material (e.g., graphene and molybdenum disulfide) is implemented into optoelectronic device as an active channel layer. The purpose of this work was to conceive the idea for using a charge storage layer (spherical Au nanoparticles (AuNPs), embedded into dielectric matrix) of the floating-gate graphene photodetector as a magnetic mirror, which allows the device to harness the increase in broadband light absorption. In particular, we systematically examined whether the versatile assembly of spherical AuNP monolayer within ...

  10. Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

    Science.gov (United States)

    Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

    2014-02-21

    The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

  11. Piezoelectric resonance enhanced microwave and optoelectronic interactive devices

    Science.gov (United States)

    McIntosh, Robert

    Electro-optic (EO) devices that modulate optical signals by electric fields are an integrative part of the photonics industry and device optimization is an important area of research. As applications move to large bandwidth and higher frequency, low electro-optic effects and the requirement for large dimension become restrictive for microwave-optical devices. Both experimental and computational evaluations indicate that strain and polarization distribution have a significant impact on electromagnetic wave propagation resulting from a resonant structure; however, no systematic study or fundamental understandings are available. This dissertation research has been carried out to study and further develop the subject of piezoelectric resonance enhanced electro-acoustic-optic process, in order to improve the sensitivity and efficiency of electro-optic sensors and to explore novel applications. Many finite element models have been constructed for evaluating the mechanisms of the phenomena and the effectiveness of the device structure. The enhancement in transmission is found to be directly related to the strain-coupled local polarization. At piezoelectric resonance oscillating dipoles or local polarizations become periodic in the material and have the greatest impact on transmission. Results suggest that the induced charge distribution by a piezoelectric material at certain resonant frequencies is effective for aiding or impeding the transmission of a propagating wave. The behavior of both piezoelectric-defined (or intrinsic piezoelectric materials) and engineered periodic structures are reported. The piezoelectric response of the surface displacement of samples is investigated using an ultra-high frequency laser Doppler vibrometer. A two dimensional view of the surface is obtained and the surface displacement, velocity and acceleration are compared to the electro-optic response under the resonant condition. A study of the acousto-optic (AO) effect in a family of oxide

  12. Fused thiophene-based conjugated polymers and their use in optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Facchetti, Antonio; Marks, Tobin J; Takai, Atsuro; Seger, Mark; Chen, Zhihua

    2015-11-03

    The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  13. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    KAUST Repository

    Tsai, Yu-Lin

    2016-09-06

    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

  14. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    Science.gov (United States)

    Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He-Hau, Jr.

    2016-09-01

    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells.

  15. Characterizations of SWNT films to obtain organic optoelectronic device anodes

    Energy Technology Data Exchange (ETDEWEB)

    Antony, R.; Ratier, B. [XLIM UMR 6172, Universite de Limoges, CNRS, 123 av. Albert Thomas, 87060 Limoges Cedex (France); Colas, M. [SPCTS, UMR CNRS6638, Faculte des Sci. et Tech., 123, av. Albert Thomas, 87060 Limoges Cedex (France); Banoukepa, G.R. de

    2010-04-15

    Organic devices such as solar cells or light emitting diodes (OLEDs) have been intensively studied for the last decade, and have now the potential to reach the market for various applications. Nevertheless, various reports have shown that devices based on Indium Tin Oxide anode present a reduced efficiency due to indium diffusion into organic active layers. In this context, our work focus on the development and the characterization of alternative anodes based on Single Walled Carbon Nanotube (SWNT) Films. In particular, this work is devoted to the morphology and charge transport properties of carbon nanotube thin layers. SWNT films were prepared on glass substrates using the vacuum filtration method reported by Wu et al. As a second step, the films were dipped in a nitric acid and subsequently dried in order to reduce their sheet resistances. Raman spectroscopy is then used to chemically map the film surface, and allow us to assess the homogeneity of the achieved films. Finally, optical and electrical characterizations (measurements of the sheet resistance and optical transmission) provide evidence of a correlation between the quality of the surface and the nature of charge transport occurring in the prepared SWNT films (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Integrated optoelectronic devices by selective-area epitaxy

    Science.gov (United States)

    Jones, A. M.; Coleman, James J.

    1997-01-01

    The development of a simulation model for selective-area epitaxy and the fabrication of semiconductor lasers monolithically integrated with electroabsorption modulators by this technique are presented. Diffusion equations and boundary conditions from selective-area MOCVD theory are applied in a computational model to predict column III reactant concentrations, and self-consistent solutions for reaction parameters are found using the finite element method. Data are presented to demonstrate accurate predictions of the thickness and composition of selectively grown ternary InGaAs quantum wells. This model was utilized to design the selective growth mask for Fabry-Perot lasers integrated with intracavity electroabsorption modulators. These devices, with modulator lengths of 290, 620, and 1020 micrometer, exhibit cw threshold currents of 9, 7.5, and 7.5 mA, respectively. Also, extinction ratios of 16.5, 19.5, and 20.5 dB, respectively, are measured at a modulator reverse bias of 2 V. Distributed Bragg reflector lasers with monolithically integrated external cavity modulators are also fabricated, and the selective-area MOCVD simulation was employed to design the growth mask dimensions and the location of the gratings. Cw threshold currents of 10.5 mA, slope efficiencies of 0.21 W/A, and extinction ratios of 18 dB at a modulator reverse bias of 1.0 V are achieved for these devices.

  17. Semiconductor optoelectronic devices for free-space optical communications

    Science.gov (United States)

    Katz, J.

    1983-01-01

    The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

  18. Two-Dimensional Materials for Halide Perovskite-Based Optoelectronic Devices.

    Science.gov (United States)

    Chen, Shan; Shi, Gaoquan

    2017-06-01

    Halide perovskites have high light absorption coefficients, long charge carrier diffusion lengths, intense photoluminescence, and slow rates of non-radiative charge recombination. Thus, they are attractive photoactive materials for developing high-performance optoelectronic devices. These devices are also cheap and easy to be fabricated. To realize the optimal performances of halide perovskite-based optoelectronic devices (HPODs), perovskite photoactive layers should work effectively with other functional materials such as electrodes, interfacial layers and encapsulating films. Conventional two-dimensional (2D) materials are promising candidates for this purpose because of their unique structures and/or interesting optoelectronic properties. Here, we comprehensively summarize the recent advancements in the applications of conventional 2D materials for halide perovskite-based photodetectors, solar cells and light-emitting diodes. The examples of these 2D materials are graphene and its derivatives, mono- and few-layer transition metal dichalcogenides (TMDs), graphdiyne and metal nanosheets, etc. The research related to 2D nanostructured perovskites and 2D Ruddlesden-Popper perovskites as efficient and stable photoactive layers is also outlined. The syntheses, functions and working mechanisms of relevant 2D materials are introduced, and the challenges to achieving practical applications of HPODs using 2D materials are also discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices

    Science.gov (United States)

    De Sanctis, Adolfo; Jones, Gareth F.; Townsend, Nicola J.; Craciun, Monica F.; Russo, Saverio

    2017-05-01

    Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), are the focus of wide research interest. They can be the key to improving bandwidths in telecommunications, capacity in data storage, and new features in consumer electronics, safety devices, and medical equipment. The characterization of these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Furthermore, proof-of-concept devices are usually fabricated from micro-meter size flakes, requiring microscopy techniques to characterize them. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through atmospheric contamination. Here, we present an integrated, multi-purpose instrument dedicated to the optical and electrical characterization of devices based on 2D materials which is able to perform low frequency electrical measurements, scanning photocurrent mapping, and Raman, absorption, and PL spectroscopy in one single setup with full control over the polarization and wavelength of light. We characterize this apparatus by performing multiple measurements on graphene, transition metal dichalcogenides (TMDs), and Si. The performance and resolution of each individual measurement technique is found to be equivalent to that of commercially available instruments. Contrary to nowadays' commercial systems, a significant advantage of the developed instrument is that for the first time the integration of a wide

  20. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

    Energy Technology Data Exchange (ETDEWEB)

    Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

    2014-04-01

    A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

  1. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.

    2016-08-04

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

  2. Tailored single-walled carbon nanotube--CdS nanoparticle hybrids for tunable optoelectronic devices.

    Science.gov (United States)

    Li, Xianglong; Jia, Yi; Cao, Anyuan

    2010-01-26

    The integration of organic and inorganic building blocks into novel nanohybrids is an important tool to exploit innovative materials with desirable functionalities. For this purpose, carbon nanotube--nanoparticle nanoarchitectures are intensively studied. We report here an efficient noncovalent chemical route to density-controllably and uniformly assemble single-walled carbon nanotubes with CdS nanoparticles. The methodology not only promises the resulting hybrids will be solution-processable but also endows the hybrids with distinct optoelectronic properties including tunable photoresponse mediated by amine molecules. On the basis of these merits, reliable thin-film photoswitches and light-driven chemical sensors are demonstrated, which highlights the potential of tailored hybrids in the development of new tunable optoelectronic devices and sensors.

  3. Simultaneous topographical, electrical and optical microscopy of optoelectronic devices at the nanoscale.

    Science.gov (United States)

    Kumar, Naresh; Zoladek-Lemanczyk, Alina; Guilbert, Anne A Y; Su, Weitao; Tuladhar, Sachetan M; Kirchartz, Thomas; Schroeder, Bob C; McCulloch, Iain; Nelson, Jenny; Roy, Debdulal; Castro, Fernando A

    2017-02-23

    Novel optoelectronic devices rely on complex nanomaterial systems where the nanoscale morphology and local chemical composition are critical to performance. However, the lack of analytical techniques that can directly probe these structure-property relationships at the nanoscale presents a major obstacle to device development. In this work, we present a novel method for non-destructive, simultaneous mapping of the morphology, chemical composition and photoelectrical properties with performance. For instance, the direct measurement of fullerene phase purity can distinguish between high purity aggregates that lead to poor performance and lower purity aggregates (fullerene intercalated with polymer) that result in strong photocurrent generation and collection. We show that the reliable determination of the structure-property relationship at the nanoscale can remove ambiguity from macroscopic device data and support the identification of the best routes for device optimisation. The multi-parameter measurement approach demonstrated herein is expected to play a significant role in guiding the rational design of nanomaterial-based optoelectronic devices, by opening a new realm of possibilities for advanced investigation via the combination of nanoscale optical spectroscopy with a whole range of scanning probe microscopy modes.

  4. Recent Approaches for Broadening the Spectral Bandwidth in Resonant Cavity Optoelectronic Devices

    Directory of Open Access Journals (Sweden)

    Gun Wu Ju

    2015-01-01

    Full Text Available Resonant cavity optoelectronic devices, such as vertical cavity surface emitting lasers (VCSELs, resonant cavity enhanced photodetectors (RCEPDs, and electroabsorption modulators (EAMs, show improved performance over their predecessors by placing the active device structure inside a resonant cavity. The effect of the optical cavity, which allows wavelength selectivity and enhancement of the optical field due to resonance, allows the devices to be made thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. However, the narrow spectral bandwidth significantly reduces operating tolerances, which leads to severe problems in applications such as optical communication, imaging, and biosensing. Recently, in order to overcome such drawbacks and/or to accomplish multiple functionalities, several approaches for broadening the spectral bandwidth in resonant cavity optoelectronic devices have been extensively studied. This paper reviews the recent progress in techniques for wide spectral bandwidth that include a coupled microcavity, asymmetric tandem quantum wells, and high index contrast distributed Bragg-reflectors. This review will describe design guidelines for specific devices together with experimental considerations in practical applications.

  5. Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices

    Science.gov (United States)

    Wassweiler, Ella; Toor, Fatima

    2016-06-01

    The use of gallium antimonide (GaSb) is increasing, especially for optoelectronic devices in the infrared wavelengths. It has been demonstrated in gallium nitride (GaN) devices operating at ultraviolet (UV) wavelengths, that surface textures increase the overall device efficiency. In this work, we fabricated eight different surface textures in GaSb to be used in enhancing efficiency in infrared wavelength devices. Through chemical etching with hydrofluoric acid, hydrogen peroxide, and tartaric acid we characterize the types of surface textures formed and the removal rate of entire layers of GaSb. Through optimization of the etching recipes we lower the reflectivity from 35.7% to 1% at 4 μm wavelength for bare and textured GaSb, respectively. In addition, we simulate surface textures using ray optics in finite element method solver software to provide explanation of our experimental findings.

  6. Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices

    Directory of Open Access Journals (Sweden)

    Ella Wassweiler

    2016-06-01

    Full Text Available The use of gallium antimonide (GaSb is increasing, especially for optoelectronic devices in the infrared wavelengths. It has been demonstrated in gallium nitride (GaN devices operating at ultraviolet (UV wavelengths, that surface textures increase the overall device efficiency. In this work, we fabricated eight different surface textures in GaSb to be used in enhancing efficiency in infrared wavelength devices. Through chemical etching with hydrofluoric acid, hydrogen peroxide, and tartaric acid we characterize the types of surface textures formed and the removal rate of entire layers of GaSb. Through optimization of the etching recipes we lower the reflectivity from 35.7% to 1% at 4 μm wavelength for bare and textured GaSb, respectively. In addition, we simulate surface textures using ray optics in finite element method solver software to provide explanation of our experimental findings.

  7. CMOS On-Chip Optoelectronic Neural Interface Device with Integrated Light Source for Optogenetics

    Science.gov (United States)

    Sawadsaringkarn, Y.; Kimura, H.; Maezawa, Y.; Nakajima, A.; Kobayashi, T.; Sasagawa, K.; Noda, T.; Tokuda, T.; Ohta, J.

    2012-03-01

    A novel optoelectronic neural interface device is proposed for target applications in optogenetics for neural science. The device consists of a light emitting diode (LED) array implemented on a CMOS image sensor for on-chip local light stimulation. In this study, we designed a suitable CMOS image sensor equipped with on-chip electrodes to drive the LEDs, and developed a device structure and packaging process for LED integration. The prototype device produced an illumination intensity of approximately 1 mW with a driving current of 2.0 mA, which is expected to be sufficient to activate channelrhodopsin (ChR2). We also demonstrated the functions of light stimulation and on-chip imaging using a brain slice from a mouse as a target sample.

  8. Plasmonic silver nanosphere enhanced ZnSe nanoribbon/Si heterojunction optoelectronic devices.

    Science.gov (United States)

    Wang, Li; Chen, Ran; Ren, Zhi-Fei; Ge, Cai-Wang; Liu, Zhen-Xing; He, Shu-Juan; Yu, Yong-Qiang; Wu, Chun-Yan; Luo, Lin-Bao

    2016-05-27

    In this study, we report a localized surface plasmon resonance (LSPR) enhanced optoelectronic device based on a ZnSe:Sb nanoribbon (NR)/Si nano-heterojunction. We experimentally demonstrated that the LSPR peaks of plasmonic Ag nanoparticles (Ag NPs) can be readily tuned by changing their size distribution. Optical analysis reveals that the absorption of ZnSe:Sb NRs was increased after the decoration of the Ag NPs with strong LSPR. Further analysis of the optoelectronic device confirmed the device performance can be promoted: for example, the short-circuit photocurrent density of the ZnSe/Si heterojunction solar cell was improved by 57.6% from 11.75 to 18.52 mA cm(-2) compared to that without Ag NPs. Meanwhile, the responsivity and detectivity of the ZnSe:Sb NRs/Si heterojunction device increased from 117.2 to 184.8 mA W(-1), and from 5.86 × 10(11) to 9.20 × 10(11) cm Hz(1/2) W(-1), respectively.

  9. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990

    Energy Technology Data Exchange (ETDEWEB)

    Razeghi, M. (Thomson-CSF, Orsay (France))

    1991-01-01

    The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry.

  10. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990

    Science.gov (United States)

    Razeghi, Manijeh

    The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry.

  11. Simultaneous topographical, electrical and optical microscopy of optoelectronic devices at the nanoscale

    KAUST Repository

    Kumar, Naresh

    2017-01-12

    Novel optoelectronic devices rely on complex nanomaterial systems where the nanoscale morphology and local chemical composition are critical to performance. However, the lack of analytical techniques that can directly probe these structure-property relationships at the nanoscale presents a major obstacle to device development. In this work, we present a novel method for non-destructive, simultaneous mapping of the morphology, chemical composition and photoelectrical properties with <20 nm spatial resolution by combining plasmonic optical signal enhancement with electrical-mode scanning probe microscopy. We demonstrate that this combined approach offers subsurface sensitivity that can be exploited to provide molecular information with a nanoscale resolution in all three spatial dimensions. By applying the technique to an organic solar cell device, we show that the inferred surface and subsurface composition distribution correlates strongly with the local photocurrent generation and explains macroscopic device performance. For instance, the direct measurement of fullerene phase purity can distinguish between high purity aggregates that lead to poor performance and lower purity aggregates (fullerene intercalated with polymer) that result in strong photocurrent generation and collection. We show that the reliable determination of the structure-property relationship at the nanoscale can remove ambiguity from macroscopic device data and support the identification of the best routes for device optimisation. The multi-parameter measurement approach demonstrated herein is expected to play a significant role in guiding the rational design of nanomaterial-based optoelectronic devices, by opening a new realm of possibilities for advanced investigation via the combination of nanoscale optical spectroscopy with a whole range of scanning probe microscopy modes.

  12. Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects

    Science.gov (United States)

    Gao, Yuanda

    Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

  13. The photodegradation of polymers and small molecular materials applied in organic optoelectronic devices

    Directory of Open Access Journals (Sweden)

    Patricie Heinrichova

    2010-12-01

    Full Text Available This contribution is focused on study of photo-degradation of aseveral photoconductive organic materials such as polymeric (highTg–PPV – block copolymer of derivates of poly(p–phenylene–vinylene and P3HT – poly(3–hexylthiophene–2,5–diyl as smallmolecular weight material a derivate of diphenyl–diketopyrrolo–pyrrole – DPP 36 was used. These materials are used forconstruction of optoelectronic devices like organic solar cells,transistors, optical sensors and others. Photo-degradation processeswere studied by optical characterization (UV–VIS spectroscopy,and by analysis of photographs obtained by means of opticalmicroscope.

  14. Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

    KAUST Repository

    Catrysse, Peter B.

    2010-08-11

    We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from that of optically thick metallic films. We analyze the optical properties when performing a geometrical transformation that maintains the electrical properties. For one-dimensional patterns of metallic wires, the analysis favors tall and narrow wires. Our design principles remain valid for oblique incidence and readily carry over to two-dimensional patterns. © 2010 American Chemical Society.

  15. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  16. Single photon superradiance and cooperative Lamb shift in an optoelectronic device

    CERN Document Server

    Frucci, Giulia; Vasanelli, Angela; Dailly, Baptiste; Todorov, Yanko; Sirtori, Carlo; Beaudoin, Grégoire; Sagnes, Isabelle

    2016-01-01

    Single photon superradiance is a strong enhancement of spontaneous emission appearing when a single excitation is shared between a large number of two-level systems. This enhanced rate can be accompanied by a shift of the emission frequency, the cooperative Lamb shift, issued from the exchange of virtual photons between the emitters. In this work we present a semiconductor optoelectronic device allowing the observation of these two phenomena at room temperature. We demonstrate experimentally and theoretically that plasma oscillations in spatially separated quantum wells interact through real and virtual photon exchange. This gives rise to a superradiant mode displaying a large cooperative Lamb shift.

  17. Photochemical deterioration of the organic/metal contacts in organic optoelectronic devices

    Science.gov (United States)

    Wang, Qi; Williams, Graeme; Tsui, Ting; Aziz, Hany

    2012-09-01

    We study the effect of exposure to light on a wide range of organic/metal contacts that are commonly used in organic optoelectronic devices and found that irradiation by light in the visible and UV range results in a gradual deterioration in their electrical properties. This photo-induced contact degradation reduces both charge injection (i.e., from the metal to the organic layer) and charge extraction (i.e., from the organic layer to the metal). X-ray photoelectron spectroscopy (XPS) measurements reveal detectable changes in the interface characteristics after irradiation, indicating that the photo-degradation is chemical in nature. Changes in XPS characteristics after irradiation suggests a possible reduction in bonds associated with organic-metal complexes. Measurements of interfacial adhesion strength using the four-point flexure technique reveal a decrease in organic/metal adhesion in irradiated samples, consistent with a decrease in metal-organic bond density. The results shed the light on a new material degradation mechanism that appears to have a wide presence in organic/metal interfaces in general, and which likely plays a key role in limiting the stability of various organic optoelectronic devices such as organic light emitting devices, organic solar cells, and organic photo-detectors.

  18. RIR-MAPLE deposition of conjugated polymers and hybrid nanocomposites for application to optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Stiff-Roberts, Adrienne D.; Pate, Ryan; McCormick, Ryan; Lantz, Kevin R. [Department of Electrical and Computer Engineering, Duke University Box 90291, Durham, NC 27708-0291, 919-660-5560 (United States)

    2012-07-30

    Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a variation of pulsed laser deposition that is useful for organic-based thin films because it reduces material degradation by selective absorption of infrared radiation in the host matrix. A unique emulsion-based RIR-MAPLE approach has been developed that reduces substrate exposure to solvents and provides controlled and repeatable organic thin film deposition. In order to establish emulsion-based RIR-MAPLE as a preferred deposition technique for conjugated polymer or hybrid nanocomposite optoelectronic devices, studies have been conducted to demonstrate the value added by the approach in comparison to traditional solution-based deposition techniques, and this work will be reviewed. The control of hybrid nanocomposite thin film deposition, and the photoconductivity in such materials deposited using emulsion-based RIR-MAPLE, will also be reviewed. The overall result of these studies is the demonstration of emulsion-based RIR-MAPLE as a viable option for the fabrication of conjugated polymer and hybrid nanocomposite optoelectronic devices that could yield improved device performance.

  19. Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

    Science.gov (United States)

    Adams, Michael J. (Editor)

    1987-01-01

    The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

  20. An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices

    CERN Document Server

    De Sanctis, Adolfo; Townsend, Nicola J; Craciun, Monica F; Russo, Saverio

    2016-01-01

    Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. They can be the key to improving bandwidths in telecommunications, capacity in data storage, new features in consumer electronics, safety devices and medical equipment. The characterization these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically-thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through ...

  1. A Flexible and Thin Graphene/Silver Nanowires/Polymer Hybrid Transparent Electrode for Optoelectronic Devices.

    Science.gov (United States)

    Dong, Hua; Wu, Zhaoxin; Jiang, Yaqiu; Liu, Weihua; Li, Xin; Jiao, Bo; Abbas, Waseem; Hou, Xun

    2016-11-16

    A typical thin and fully flexible hybrid electrode was developed by integrating the encapsulation of silver nanowires (AgNWs) network between a monolayer graphene and polymer film as a sandwich structure. Compared with the reported flexible electrodes based on PET or PEN substrate, this unique electrode exhibits the superior optoelectronic characteristics (sheet resistance of 8.06 Ω/□ at 88.3% light transmittance). Meanwhile, the specific up-to-bottom fabrication process could achieve the superflat surface (RMS = 2.58 nm), superthin thickness (∼8 μm thickness), high mechanical robustness, and lightweight. In addition, the strong corrosion resistance and stability for the hybrid electrode were proved. With these advantages, we employ this electrode to fabricate the simple flexible organic light-emitting device (OLED) and perovskite solar cell device (PSC), which exhibit the considerable performance (best PCE of OLED = 2.11 cd/A(2); best PCE of PSC = 10.419%). All the characteristics of the unique hybrid electrode demonstrate its potential as a high-performance transparent electrode candidate for flexible optoelectronics.

  2. Recognition of Cuneiform Inscription Signs by use of a Hybrid-Optoelectronic Correlator Device

    Science.gov (United States)

    Demoli, Nazif; Kamps, Jörn; Krüger, Sven; Gruber, Hartmut; Wernicke, Günther

    2002-08-01

    A hybrid-optoelectronic correlator device and an algorithm are proposed for recognizing cuneiform inscription signs. The device is based on the extended correlator architecture with three liquid-crystal display(s) (LCD)s and three light detectors: one CCD camera for capturing the input image, one LCD for displaying the input image, two LCDs for the complex correlation filter (amplitude and phase parts), and two detectors for measuring the total and peak intensities of the output correlation information. The recognition algorithm is designed to allow automatic as well as real-time processing. The recognition results are given for the cuneiform signs impressed on an original clay tablet. The investigated tablet (VAT 12890 of the Pergamon Museum, Berlin, Germany) was found in Bogazk öy (Hattusha) and dates from the 14th century B.C. It is a fragment of the Epic of Gilgamesh in the Akkadian language with a large number of the sign samples.

  3. Organic optoelectronics

    CERN Document Server

    Hu, Wenping; Gong, Xiong; Zhan, Xiaowei; Fu, Hongbing; Bjornholm, Thomas

    2012-01-01

    Written by internationally recognized experts in the field with academic as well as industrial experience, this book concisely yet systematically covers all aspects of the topic.The monograph focuses on the optoelectronic behavior of organic solids and their application in new optoelectronic devices. It covers organic electroluminescent materials and devices, organic photonics, materials and devices, as well as organic solids in photo absorption and energy conversion. Much emphasis is laid on the preparation of functional materials and the fabrication of devices, from materials synthesis a

  4. Study of liquid transparent encapsulants for the packaging of light emitting diode and other optoelectronic devices

    Science.gov (United States)

    Zhou, Yan

    Optically transparent polymeric materials required for the encapsulation of optoelectronic chips are critical to the manufacturability, cost, performance, and reliability of LED and other optoelectronic devices. This work is focused on the development of the transparent epoxy based liquid encapsulants with the objective to enhance the manufacturability, to reduce the cost, and to improve both the performance and the reliability of the packaged optoelectronic devices. First, three transparent encapsulants based on different chemistries were reviewed and their properties compared. These encapsulant systems serve as models of different epoxy chemistries suitable for LED applications. The experimental result gives an overview of the characteristics of each system and guides the further development of the encapsulant for different packaging needs. Then, two new encapsulants were developed and introduced. The first one was a two-component encapsulant based on DGEBA/MHHPA chemistry, but provides lower internal stress, better transmission retention upon thermal aging, and easier processing compared with the current best performer based on the same chemistry. The second one is a novel one-component, low temperature and fast cure encapsulant with a high refractive index of 1.6. This encapsulant provides not only the easy handling, convenient storage, and energy saving, but also higher light output for the packaged LED devices. The third part of this work deals with nanocomposites based on aromatic epoxy and cycloaliphatic epoxy. It was found that these composites provide lower CTE, better toughness, and other advantages while keeping good transparency, therefore are suitable for LED applications. Toughening is another topic studied. Three toughened transparent encapsulants were introduced and compared. The toughening agents selected effectively increased the toughness of the cycloaliphatic epoxy/MHHPA system with minimum negative effect on the transmission of the

  5. Achieving high performance polymer optoelectronic devices for high efficiency, long lifetime and low fabrication cost

    Science.gov (United States)

    Huang, Jinsong

    This thesis described three types of organic optoelectronic devices: polymer light emitting diodes (PLED), polymer photovoltaic solar cell, and organic photo detector. The research in this work focuses improving their performance including device efficiency, operation lifetime simplifying fabrication process. With further understanding in PLED device physics, we come up new device operation model and improved device architecture design. This new method is closely related to understanding of the science and physics at organic/metal oxide and metal oxide/metal interface. In our new device design, both material and interface are considered in order to confine and balance all injected carriers, which has been demonstrated very be successful in increasing device efficiency. We created two world records in device efficiency: 18 lm/W for white emission fluorescence PLED, 22 lm/W for red emission phosphorescence PLED. Slow solvent drying process has been demonstrated to significantly increase device efficiency in poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C 61-butyric acid methyl ester (PCBM) mixture polymer solar cell. From the mobility study by time of flight, the increase of efficiency can be well correlated to the improved carrier transport property due to P3HT crystallization during slow solvent drying. And it is found that, similar to PLED, balanced carrier mobility is essential in high efficient polymer solar cell. There is also a revolution in our device fabrication method. A unique device fabrication method is presented by an electronic glue based lamination process combined with interface modification as a one-step polymer solar cell fabrication process. It can completely skip the thermal evaporation process, and benefit device lifetime by several merits: no air reactive. The device obtained is metal free, semi-transparent, flexible, self-encapsulated, and comparable efficiency with that by regular method. We found the photomultiplication (PM) phenomenon in C

  6. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

    Science.gov (United States)

    Moustakas, Theodore D.; Paiella, Roberto

    2017-10-01

    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  7. New materials for optoelectronic devices: Growth and characterization of indium and gallium chalcogenide layer compounds

    Energy Technology Data Exchange (ETDEWEB)

    Mancini, A.M.; Micocci, G.; Rizzo, A.

    1983-09-01

    The main characteristics and the possible applications of some new materials for optoelectronic devices are analyzed. For this purpose, the most widely used growth methods for obtaining good quality single crystals of indium and gallium chalcogenide layered compounds are described together with the best results obtained by us in the growth of GaS, GaSe, GaTe and InSe. The structural characteristics of these compounds, as inferred by electron and X-ray diffraction are reported. The electrical and optical properties of the various materials are related to the growth methods and are analyzed taking into account the trapping centers present in the energy gaps. The parameters of these centers are reported for all the analyzed layered compounds as determined by different electric and photoelectric techniques.

  8. FY1995 optoelectronic devices and circuits for terabit class network; 1995 nendo terabit kyu network yo hikari denshi device kairo

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The necessary technology realizing Terabit class optical network is the signal multiplexing both in temporal and spectral domains. Controllability of ultrafast optoelectronic systems is therefore the priority issue. Specifically we chose semiconductor lasers as the key devices. The methodology for performance improvement and the creation of novel functionality are investigated. Firstly compression of semiconductor laser pulse reached the world record of 65 femto second. Secondly a proposal was made to control mode locked semiconductor lasers via subharmonic synchronization and a substantial phase noise reduction was demonstrated. Thirdly a new technology was developed to realize broadband anti-reflection coating on semiconductor laser amplifier facet, bringing about significant performance improvement. To compensate the dispersion induced signal distortion a broadband semiconductor laser amplifier four wave mixing was analyzed and also demonstrated experimentally. (NEDO)

  9. Development of an opto-electronic fiber device with multiple nano-probes

    Science.gov (United States)

    Mehta, N.; Cocking, A.; Zhang, C.; Ma, D.; Xu, Y.; Liu, Z.

    2016-11-01

    We present the fabrication and characterization of an opto-electronic fiber device which can allow for both electromechanical functionality and optical waveguiding capability. The air holes of a photonic crystal fiber are selectively sealed and then pumped with molten metal under pressure. The metal filled holes act as electrodes to which individual carbon nanotubes (CNT) are attached precisely by a laser-welding technique or a focused ion beam assisted pick-and-bond technique. The optical modal profile and the group velocity dispersion of the fabricated device are studied both numerically and experimentally. We also present preliminary experimental proof showing the feasibility of electric actuation of a pair of nanotubes by applying up to 40 V potential difference between the filled electrodes. Furthermore, numerical simulations are carried out which agree with the experimentally observed displacement of the CNT upon electric actuation. The unique aspect of our device is that it provides optical waveguiding and electromechanical nano-probing capability in a single package. Such combined functionality can potentially enable simultaneous electrical and optical manipulation and interrogation at the nanoscale.

  10. Optical meta-films of alumina nanowire arrays for solar evaporation and optoelectronic devices (Conference Presentation)

    Science.gov (United States)

    Kim, Kyoungsik; Bae, Kyuyoung; Kang, Gumin; Baek, Seunghwa

    2017-05-01

    Nanowires with metallic or dielectric materials have received considerable interest in many research fields for optical and optoelectronic devices. Metal nanowires have been extensively studied due to the high optical and electrical properties and dielectric nanowires are also investigated owing to the multiple scattering of light. In this research, we report optical meta-films of alumina nanowire arrays with nanometer scale diameters by fabrication method of self-aggregate process. The aluminum oxide nanowires are transparent from ultraviolet to near infrared wavelength regions and array structures have strong diffusive light scattering. We integrate those optical properties from the material and structure, and produce efficient an optical haze meta-film which has high transparency and transmission haze at the same time. The film enhances efficiencies of optical devices by applying on complete products, such as organic solar cells and LEDs, because of an expanded optical path length and light trapping in active layers maintaining high transparency. On the other hands, the meta-film also produces solar steam by sputtering metal on the aluminum oxide nanowire arrays. The nanowire array film with metal coating exhibits ultrabroadband light absorption from ultraviolet to mid-infrared range which is caused by nanofocusing of plasmons. The meta-film efficiently produces water steam under the solar light by metal-coated alumina arrays which have high light-to-heat conversion efficiency. The design, fabrication, and evaluation of our light management platforms and their applications of the meta-films will be introduced.

  11. On the coherence/incoherence of electron transport in semiconductor heterostructure optoelectronic devices

    Science.gov (United States)

    Harrison, P.; Indjin, D.; Savić, I.; Ikonić, Z.; Evans, C. A.; Vukmirović, N.; Kelsall, R. W.; McTavish, J.; Jovanović, V. D.; Milanović, V.

    2008-02-01

    This paper compares and contrasts different theoretical approaches based on incoherent electron scattering transport with experimental measurements of optoelectronic devices formed from semiconductor heterostructures. The Monte Carlo method which makes no a priori assumptions about the carrier distribution in momentum or phase space is compared with less computationally demanding energy-balance rate equation models which assume thermalised carrier distributions. It is shown that the two approaches produce qualitatively similar results for hole transport in p-type Si 1-xGe x/Si superlattices designed for terahertz emission. The good agreement of the predictions of rate equation calculations with experimental measurements of mid- and far-infrared quantum cascade lasers, quantum well infrared photodetectors and quantum dot infrared photodetectors substantiate the assumption of incoherent scattering dominating the transport in these quantum well based devices. However, the paper goes on to consider the possibility of coherent transport through the density matrix method and suggests an experiment that could allow coherent and incoherent transport to be distinguished from each other.

  12. Growth and fabrication of gallium nitride and indium gallium nitride-based optoelectronic devices

    Science.gov (United States)

    Berkman, Erkan Acar

    In this study, heteroepitaxial growth of III-Nitrides was performed by metalorganic chemical vapor deposition (MOCVD) technique on (0001) Al 2O3 substrates to develop GaN and InxGa1-x N based optoelectronic devices. Comprehensive experimental studies on emission and relaxation mechanisms of InxGa1-xN quantum wells (QWs) and InxGa 1-xN single layers were performed. The grown films were characterized by x-ray diffraction (XRD), Hall Effect measurements, photoluminescence measurements (PL) and transmission electron microscopy (TEM). An investigation on the effect of number and width of QWs on PL emission properties of InxGa 1-xN single QWs and multi-quantum wells (MQW) was conducted. The experimental results were explained by the developed theoretical bandgap model. The study on the single layer InxGa1-xN films within and beyond critical layer thickness (CLT) demonstrated that thick InxGa 1-xN films display simultaneous presence of strained and (partially) relaxed layers. The In incorporation into the lattice was observed to be dependent on the strain state of the film. The findings on InxGa1-xN QWs and single layers were implemented in the development of InxGa1-xN based LEDs and photodiodes, respectively. The as-grown samples were fabricated using conventional lithography techniques into various optoelectronic devices including long wavelength LEDs, dichromatic monolithic white LEDs, and p-i-n photodiodes. Emission from InxGa1-xN/GaN MQW LEDs at wavelengths as long as 625nm was demonstrated. This is one of the longest peak emission wavelengths reported for MOCVD grown InxGa1-xN MQW structures. Dichromatic white emission in LEDs was realized by utilizing two InGaN MQW active regions emitting at complementary wavelengths. InGaN p-i-n photodiodes operating at various regions of the visible spectrum tailored by the i-layer properties were developed. This was achieved by the novel approach of employing InxGa1-xN in all layers of the p-i-n photodiodes, enabling nearly

  13. Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices

    Science.gov (United States)

    Du, Xiang

    As the sizes of individual components in electronic and optoelectronic devices approach nano scale, the performance of the devices is often determined by surface properties due to their large surface-to-volume ratio. Surface phenomena have become one of the cornerstones in nanoelectronic industry. For this reason, research on the surface functionalization has been tremendous amount of growth over the past decades, and promises to be an increasingly important field in the future. Surface functionalization, as an effective technique to modify the surface properties of a material through a physical or chemical approach, exhibits great potential to solve the problems and challenges, and modulate the performance of nanomaterials based functional devices. Surface functionalization drives the developments and applications of modern electronic and optoelectronic devices fabricated by nanomaterials. In this thesis, I demonstrate two surface functionalization approaches, namely, surface transfer doping and H2 annealing, to effectively solve the problems and significantly enhance the performance of 2D (single structure black phosphorus (BP) and heterostructure graphene/Si Schottky junction), and quasi-1D (molybdenum trioxide (MoO 3) nanobelt) nanomaterials based functional devices, respectively. In situ photoelectron spectroscopy (PES) measurements were also carried out to explore the interfacial charge transfer occurring at the interface between the nanostructures and doping layers, and the gap states in MoO 3 thin films, which provides the underlying mechanism to understand and support our device measurement results. In the first part of this thesis, I will discuss the first surface functionalization approach, namely, surface transfer doping, to effectively modulate the ambipolar characteristics of 2D few-layer BP flakes based FETs. The ambipolar characteristics of BP transistors were effectively modulated through in situ surface functionalization with cesium carbonate (Cs2

  14. Plasmonic Nanostructures for Enhanced ZnO/Si Heterojunction Optoelectronic Devices

    Science.gov (United States)

    Tong, Chong

    The objective of this work focuses on ZnO and Al doped ZnO (AZO) thin film deposition and characterization, and developing reliable ZnO/Si heterojunction thin film optoelectronic devices. Producing and integration of plasmonic nanostructures were also studied for improving device performance with plasmonic light trapping effects. Enhanced ZnO/Si heterojunction metal-semiconductor-metal (MSM) photodetectors with plasmonic Ag nanoparticles (NPs) were realized. Self-assembled Ag NPs with different sizes, densities and distributions were produced on the surface of ZnO/Si MSM photodetector devices. By tuning the characteristic of these NPs, a higher-performance MSM detector has been achieved with photocurrent enhancement up to 680%. The spectral enhancement was broadband from 350 nm to 850 nm. To investigate the nanoplasmonic effects for enhanced solar cell devices, a relatively simple device structure, Si Schottky solar cell with the metal-insulator-semiconductor (MIS) structure, was studied first. By introducing Ag NPs and SiO2 spacer layers on top of Si Schottky solar cells, we demonstrated a positive and tunable light trapping effect introduced by metallic NPs. Enhanced light trapping effects at distinct resonance wavelengths were observed in the optical spectra of the plasmonic-enhanced devices. Electrical measurements confirmed the expected photocurrent improvement at these corresponding wavelengths. It was also revealed that the Ag NPs enhance the carrier generation rate inside of the Si active layer without sacrificing carrier collection efficiency of the device. The short-circuit current density (Jsc) of the best cell we obtained was improved from13.7 mA/cm2 to 19.7 mA/cm2, with an enhancement factor of 43.7%. Periodic nanostructures formed with nanoimprint technique and annealing process were studies to utilize in the Al-ZnO/Si heterojunction solar cell devices. The size, inter-particle distance and shape of these nanostructures can be easily tuned by changing

  15. Fused thiophene-based conjugated polymers and their use in optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Facchetti, Antonio; Marks, Tobin J.; Takai, Atsuro; Seger, Mark; Chen; , Zhihua

    2017-07-18

    The present teachings relate to polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds generally include as repeating units at least one annulated thienyl-vinylene-thienyl (TVT) unit and at least one other pi-conjugated unit. The annulated TVT unit can be represented by the formula: ##STR00001## where Cy.sup.1 and Cy.sup.2 can be a five- or six-membered carbocyclic ring. The annulated TVT unit can be optionally substituted at any available ring atom(s), and can be covalently linked to the other pi-conjugated unit via either the thiophene rings or the carbocyclic rings Cy.sup.1 and Cy.sup.2. The other pi-conjugated unit can be a conjugated linear linker including one or more unsaturated bonds, or a conjugated cyclic linker including one or more carbocyclic and/or heterocyclic rings.

  16. Development of an experimental optoelectronic device to study the amplitude of mandibular movements

    Directory of Open Access Journals (Sweden)

    Reinaldo Missaka

    2008-06-01

    Full Text Available This study aimed to present a wireless mandibular motion tracking device and optoelectronic data acquisition system developed to analyze the real-time spatial motion of the entire mandible during mouth opening and closing with no restriction of any movement. The procedures were divided into three phases: confection of a kinematic arch, dynamic digital video image acquisition, and image processing and analysis by using graphic computation. Four sequences of jaw opening/closing movements were recorded in lateral view: two from the maximum intercuspation (MIC and the other two from a forced mandibular retruded position. Jaw motion was recorded by a digital video camera and processed as spatial coordinates corresponding to the position variation of the markers in the kinematic arch. The results showed that the method was capable of recording and processing the dynamics of the mandibular movements during jaw opening/closing using pixel-magnitude points. The mandible showed points with less displacement located near the temporomandibular joint during the opening/closing movements from the mandibular retruded position. When the jaw movements were recorded from MIC, these points were located near the mandibular foramen.

  17. Developing high mobility emissive organic semiconductors towards integrated optoelectronic devices (Conference Presentation)

    Science.gov (United States)

    Dong, Huanli; Hu, Wenping; Heeger, Alan J.

    2016-09-01

    The achievement of organic semiconductors with both high mobility and strong fluorescence emission remains a challenge. High mobility requires molecules which pack densely and periodically, while serious fluorescence quenching typically occurs when fluorescent materials begin to aggregate (aggregation-induced quenching (AIQ)). Indeed, classical materials with strong fluorescent emission always exhibit low mobility, for example, tris(8-hydroxyquinoline) aluminium (ALQ) and phenylenevinylene-based polymers with mobility only 10-6-10-5 cm2V-1s-1, and benchmark organic semiconductors with high mobility demonstrate very weak emission, for example, rubrene exhibits a quantum yield 1% in crystalline state and pentacene shows very weak fluorescence in the solid state. However, organic semiconductors with high mobility and strong fluorescence are necessary for the achievement of high efficiency organic light-emitting transistors (OLETs) and electrically pumped organic lasers. Therefore, it is necessary for developing high mobility emissive organic/polymeric semiconductors towards a fast mover for the organic optoelectronic integrated devices and circuits.

  18. Theoretical studies of GaInNAs for optoelectronic device applications

    CERN Document Server

    Alexandropoulos, D

    2003-01-01

    This thesis focuses on the theoretical analysis of GalnNAs alloys for use in optoelectronic devices. We develop reliable theoretical models that describe the properties of GaInNAs alloys and apply these to establish design rules. We develop a k centre dot p model for the band structure of GaInNAs-based Quantum Wells (QW) that accounts for valence band mixing effects, strain effects and the N induced coupling of the conduction band states of GaInNAs alloys. We implement the model to study the effect of N on the conduction and valence bands. The optical properties of GaInNAs structures are studied and design rules that ensure optimal performance are derived for 1.3 mu m emission. It is established that high N content decreases the differential gain and the Momentum Matrix Element (MME) for TE polarisation while it increases the transparency concentration and the MME for TM polarisation. The material gain and linewidth enhancement factor are found to have comparable values to InGaAsP structures. The effect of al...

  19. Heavy ion elastic recoil detection analysis of optoelectronic and semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Dytlewski, N.; Cohen, D.D. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Johnston, P.; Walker, S. [Royal Melbourne Inst. of Tech., VIC (Australia); Whitlow, H.; Hult, M. [Lund Univ. (Sweden); Oestling, M.; Zaring, C. [Royal Inst. of Tech., Stockholm (Sweden)

    1993-12-31

    In recent years, the use of heavy ion time-of-flight elastic recoil spectrometry (HIERDA) has been applied to analyse multi-phase, thin layer devices used in optoelectronics, semiconductors and solar power generation. HIERDA gives simultaneously, mass resolved elemental concentration vs depth profiles of the matrix constituents, and is particularly suited to the determination of light elements in a heavy matrix. The beam/target interaction process is similar to RBS, but has the difference that the recoiling target atoms are detected instead of the scattered projectile. High energy, heavy ions beams bombard the sample, ejecting recoil atoms which are detected at a forward angle of 45 deg. A time-of-flight and total energy detection system enables the ejected particle`s mass to be identified, and allows energy spectra to be obtained and interpreted in an analogous way to RBS, but with the important difference that the elemental spectra are separated, and not superimposed on a background as in RBS. Some of the measurements made with a HIERDA system on the ANTARES Tandem Accelerator at ANSTO are described. 1 refs., 4 figs.

  20. New materials based on carbazole for optoelectronic device applications:Theoretical investigation

    Institute of Scientific and Technical Information of China (English)

    K.Hasnaoui; H.Zgou; M.Hamidi; M.Bouachrine

    2008-01-01

    A quantum-chemical investigation on the structural and optoelectronic properties of two materials based on carbazole is carried out.The purpose is to display the effect of grafting the fluorine atoms on their optoelectronic and pbysico-chemical properties.In addition to solubility in the polar solvents and the modification in geometric parameters,the substitution of fluorine destabilizes the HOMO and LUMO levels,decreases the band gap energy and raises conjugation length.These properties suggest the substituted fluorine compound as a good candidate for optoelectronic applications.

  1. Atomistic- and Meso-Scale Computational Simulations for Developing Multi-Timescale Theory for Radiation Degradation in Electronic and Optoelectronic Devices

    Science.gov (United States)

    2017-02-13

    RADIATION DEGRADATION IN ELECTRONIC AND OPTOELECTRONIC DEVICES Fei Gao University of Michigan 2355 Bonisteel Blvd. Ann Arbor, Michigan 48109-2014...for Radiation Degradation in Electronic and Optoelectronic Devices 5a. CONTRACT NUMBER FA9453-15-1-0084 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...NUMBER 62601F 6. AUTHOR(S) 5d. PROJECT NUMBER 4846 Fei Gao 5e. TASK NUMBER PPM00015486 5f. WORK UNIT NUMBER EF126376 7. PERFORMING ORGANIZATION NAME

  2. Rationally designed donor-acceptor scheme based molecules for applications in opto-electronic devices.

    Science.gov (United States)

    Subash Sundar, T; Sen, R; Johari, P

    2016-04-07

    Several donor (D)-acceptor (A) based molecules are rationally designed by adopting three different schemes in which the conjugation length, strength of the donor and acceptor moieties, and planarity of the molecules are varied. These variations are made by introducing a π-conjugated linkage unit, terminating the ends of the moieties by different electron donating and accepting functional groups, and fusing the donor and acceptor moieties, respectively. Our DFT and TDDFT based calculations reveal that using the above-mentioned design schemes, the electronic and optical properties of the D-A based molecules can be largely tuned. While introduction of a linkage and fusing of moieties enhance the π-π interaction, addition of electron donating groups (-CH3, -OH, and -NH2) and electron accepting groups (-CF3, -CN, -NO2, and -NH3(+)) varies the strength of the donor and acceptor moieties. These factors lead to modulation of the HOMO and LUMO energy levels and facilitate the engineering of the HOMO-LUMO gap and the optical gap over a wide range of ∼0.7-3.7 eV. Moreover, on the basis of calculated ionization potential and reorganization energy, most of the investigated molecules are predicted to be air stable and to exhibit high electron mobility, with the possibility of the presence of ambipolar characteristics in a few of them. The results of our calculations not only demonstrate the examined molecules to be the potential materials for organic opto-electronic devices, but also establish an understanding of the composition-structure-property correlation, which will provide guidelines for designing and synthesizing new materials of choice.

  3. Granulometric composition study of mineral resources using opto-electronic devices and Elsieve software system

    Directory of Open Access Journals (Sweden)

    Kaminski Stanislaw

    2016-01-01

    Full Text Available The use of mechanical sieves has a great impact on measurement results because occurrence of anisometric particles causes undercounting the average size. Such errors can be avoided by using opto-electronic measuring devices that enable measurement of particles from 10 μm up to a few dozen millimetres in size. The results of measurement of each particle size fraction are summed up proportionally to its weight with the use of Elsieve software system and for every type of material particle-size distribution can be obtained. The software allows further statistical interpretation of the results. Beam of infrared radiation identifies size of particles and counts them precisely. Every particle is represented by an electronic impulse proportional to its size. Measurement of particles in aqueous suspension that replaces the hydrometer method can be carried out by using the IPS L analyser (range from 0.2 to 600 μm. The IPS UA analyser (range from 0.5 to 2000 μm is designed for measurement in the air. An ultrasonic adapter enables performing measurements of moist and aggregated particles from 0.5 to 1000 μm. The construction and software system allow to determine second dimension of the particle, its shape coefficient and specific surface area. The AWK 3D analyser (range from 0.2 to 31.5 mm is devoted to measurement of various powdery materials with subsequent determination of particle shape. The AWK B analyser (range from 1 to 130 mm measures materials of thick granulation and shape of the grains. The presented method of measurement repeatedly accelerates and facilitates study of granulometric composition.

  4. Intersubband transitions in III-V semiconductors for novel infrared optoelectronic devices

    Science.gov (United States)

    Hossain, Mohammed Imrul

    the mid-infrared range. Our results provide insights in the detail charge transport and optical properties of this design concept. We are also investigating the possibility of inversionless lasing of this type of dual wavelength. My research encompasses the fabrication and processing of nanoscale semiconductor devices on high quality MBE grown wafers from our collaborators. The fabrication includes e-beam evaporation, photolithography, dry and wet etching, rapid thermal annealing, step height analysis, plasma etching, PECVD and also mask designing. The characterization and analysis of the optoelectronic devices is performed through FTIR (Fourier transform infra-red) spectroscopy. The material systems I have directly worked on are Silicon, GaAs/AlGaAs and InGaAs/InAlAs lattice matched to InP. Very recently I have also done some device processing in the InAlN/GaN material system.

  5. Thin-film growth and patterning techniques for small molecular organic compounds used in optoelectronic device applications.

    Science.gov (United States)

    Biswas, Shaurjo; Shalev, Olga; Shtein, Max

    2013-01-01

    Rapid advances in research and development in organic electronics have resulted in many exciting discoveries and applications, including organic light-emitting devices for information display and illumination, solar cells, photodetectors, chemosensors, and logic. Organic optoelectronic materials are broadly classified as polymeric or small molecular. For the latter category, solvent-free deposition techniques are generally preferred to form well-defined interfaces and improve device performance. This article reviews several deposition and patterning methods for small molecular thin films and devices, including organic molecular beam deposition, vacuum thermal evaporation, organic vapor phase deposition, and organic vapor jet printing, and compares them to several other methods that have been proposed recently. We hope this review provides a compact but informative summary of the state of the art in organic device processing and addresses the various techniques' governing physical principles.

  6. Nanoelectronic devices and measurements toward nanocrystal-based optoelectronics and DNA sequencing with solid-state nanopores

    Science.gov (United States)

    Willis, Lauren J.

    Nanoelectronics are critical to exploring nanoscale materials: including nanocrystals, which could revolutionize optoelectronics, and DNA, which could revolutionize medicine. Our suspended silicon nitride membranes combined with electron beam lithography and transmission electron microscopy have been essential to our device fabrication and measurements. Nanocyrstal-based optoelectronics have garnered much interest, and thus new ways of increasing their transport are constantly being researched. We used ligand exchanges to decrease the interparticle spacing of nanocrystal films, which is known to augment transport. Using gaps only a few nanoparticles-wide, we measured transport and found that current could be controlled with annealing, hydrazine treatment, and voltage-sweeping. Annealing destroyed the insulating ligand surrounding each nanocrystal and allowed the particles to move closer. This usually increased the photocurrent, without significantly increasing the dark current. However, this was ineffective on sub-monolayers. Hydrazine was similar, except it replaced the ligand, rather than destroying it, and it was effective on sub-monolayers; however, it caused a large increase in the dark current as well as the photocurrent. Sweeping the voltage overnight could increase or decrease the photocurrent of a sample depending on whether the sample was illuminated or in the dark, corresponding to traps being emptied or filled. In addition to nanocrystals, our devices were used in solution to sense DNA. We fabricated nanelectrodes and nanowires next to nanopores and showed DNA translocations ionically. We also developed methods to make the pores hydrophilic without the use of piranha; we instead used rapid thermal annealing, heated ozone treatments, and oxygen/hydrogen plasmas. While high rates of device failure was a challenge, recommendations for future experiments are presented, including grounding of all equipment and an extreme focus on sample cleanliness. We have

  7. Self Assembled Nano-Photonic Devices Derived from Marine DNA for Opto-Electronic Applications

    Science.gov (United States)

    2006-03-30

    SPIE., 5724, 224-233 (2005) 13. A. Watanuki , J. Yoshida, S. Kobayashi, H. Ikeda and N. Ogata, 12 Proceedings of SPIE., 5724, 234-241 (2005) 14...J. Yoshida, A. Watanuki , S. Kobayashi, H. Ikeda and N. Ogata, Tech. Digest, 10th Optoelectronics and Communication Conference (OECC2005), 342-343...optical waveguides fabricated with DNA”, Proc. SPIE, 5724, 224-233, 2005. 5. A. Watanuki , J. Yoshida, S. Kobayashi, H. Ikeda and N. Ogata: “Optical

  8. A cost-effective 100-Gb/s transmitter with low-speed optoelectronic devices and high spectral efficiency

    Institute of Scientific and Technical Information of China (English)

    Junming Gao; Qingjiang Chang; Tao Wang; Yikai Su

    2008-01-01

    A 100-Gb/s high-speed optical transmitter is proposed and experimentally demonstrated. Based on frequency-quadrupling technique, two sub-channels with a fixed 50-GHz spacing are obtained from one laser source. Using return-to-zero differential quadrature phase-shift keying (RZ-DQPSK) modulation format and polarization multiplexing (PolMux), only low-speed electronic devices of 12.5 GHz are needed for the 100-Gb/s transmitter. This eliminates the need of ultrahigh-speed optoelectronic devices and thus greatly reduces the cost. The experimental results show that this transmitter can achieve good performance in dispersion tolerance of a 25-km single mode fiber (SMF).

  9. Electronic and optoelectronic devices based on chirality-enriched wafer-scale single-wall carbon nanotube thin films

    Science.gov (United States)

    Gao, Weilu; He, Xiaowei; Xie, Lijuan; Zhang, Qi; Haroz, Erik; Doorn, Stephen K.; Kono, Junichiro

    2015-03-01

    The unique and rich material properties of single-wall carbon nanotubes (SWCNTs) make them attractive for nano-electronic and optoelectronic applications. Slight changes in tube diameter and wrapping angle, defined by the chirality indices (n, m), can dramatically modify the bandstructure, which can be utilized for designing devices with tailored properties. However, it remains to be a challenge to fabricate macroscopic, single-chirality devices. Here, we introduce a simple way of producing chirality-enriched wafer-scale SWCNT films by combining recently developed solution-based polymer-modified sorting method and vacuum filtration. The produced thin films can be easily transferred onto any substrate to have a CMOS compatible wafer. We fabricated a transistor of (6,5)-enriched SWCNTs with an on/off ratio >103. Large-scale photothermoelectric-effect-based and photovoltaic-effect-based photodetectors made of (6,6)- and (6,5)-enriched films, respectively, will also be discussed.

  10. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  11. Optoelectronics circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Optoelectronics Circuits Manual covers the basic principles and characteristics of the best known types of optoelectronic devices, as well as the practical applications of many of these optoelectronic devices. The book describes LED display circuits and LED dot- and bar-graph circuits and discusses the applications of seven-segment displays, light-sensitive devices, optocouplers, and a variety of brightness control techniques. The text also tackles infrared light-beam alarms and multichannel remote control systems. The book provides practical user information and circuitry and illustrations.

  12. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon)

    Science.gov (United States)

    1992-06-01

    The laser fabrication begins with the patterning of for optoelectronic integrated circuits (OEICs), a planar 1 000 A of Si3N4 into rings [25-jim-wide...is grown in the center of the wave- guide in the lateral direction. guide layer. The effect of the optical waveguide is shown by the The laser ... fabrication begins with the deposition on the near-field (NF) pattern in the inset (b) of the -2-jim- crystal of - 1000 Ak Si 3N4, which is patterned with

  13. Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices

    KAUST Repository

    Beljonne, David

    2011-02-08

    We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational techniques used to assess the morphology of organic: organic heterojunctions; we highlight the compromises that are necessary to handle large systems and multiple time scales while preserving the atomistic details required for subsequent computations of the electronic and optical properties. We then review some recent theoretical advances in describing the ground-state electronic structure at heterojunctions between donor and acceptor materials and highlight the role played by charge-transfer and long-range polarization effects. Finally, we discuss the modeling of the excited-state electronic structure at organic:organic interfaces, which is a key aspect in the understanding of the dynamics of photoinduced electron-transfer processes. © 2010 American Chemical Society.

  14. Novel BTlGaN semiconducting materials for infrared opto-electronic devices

    Science.gov (United States)

    Assali, Abdenacer; Bouslama, M'hamed

    2017-03-01

    BTlGaN quaternary alloys are proposed as new semiconductor materials for infrared opto-electronic applications. The structural and opto-electronic properties of zinc blende BxTlyGa1-x-yN alloys lattice matched to GaN with (0 ⩽ x and y ⩽ 0.187) are studied using density functional theory (DFT) within full-potential linearized augmented plane wave (FP-LAPW) method. The calculated structural parameters such as lattice constant a0 and bulk modulus B0 are found to be in good agreement with experimental data using the new form of generalized gradient approximation (GGA-WC). The band gaps of the compounds are also found very close to the experimental results using the recently developed Tran-Blaha-modified Becke-Johnson (TB-mBJ) exchange potential. A quaternary BxTlyGa1-x-yN is expected to be lattice matched to the GaN substrate with concentrations x = 0.125 and y = 0.187 allows to produce high interface layers quality. It has been found that B incorporation into BTlGaN does not significantly affect the band gap, while the addition of dilute Tl content leads to induce a strong reduction of the band gap, which in turn increases the emission wavelengths to the infrared region. The refractivity, reflectivity and absorption coefficient of these alloys were investigated. BTlGaN/GaN is an interesting new material to be used as active layer/barriers in quantum wells suitable for realizing advanced Laser Diodes and Light-Emitting Diodes as new sources of light emitting in the infrared spectrum region.

  15. Co-deposition methods for the fabrication of organic optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, Mark E.; Liu, Zhiwei; Wu, Chao

    2016-09-06

    A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.

  16. Integrated Silicon Optoelectronics

    CERN Document Server

    Zimmermann, Horst K

    2010-01-01

    Integrated Silicon Optoelectronics synthesizes topics from optoelectronics and microelectronics. The book concentrates on silicon as the major base of modern semiconductor devices and circuits. Starting from the basics of optical emission and absorption, as well as from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed. Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included. The book, furthermore, contains a review of the newest state of research on eagerly anticipated silicon light emitters. In order to cover the topics comprehensively, also included are integrated waveguides, gratings, and optoelectronic power devices. Numerous elaborate illustrations facilitate and enhance comprehension. This extended edition will be of value to engineers, physicists, and scientists in industry and at universities. The book is also recommended to graduate student...

  17. PECASE: Nanostructure Hybrid Organic/Inorganic Materials for Active Opto-Electronic Devices

    Science.gov (United States)

    2011-01-03

    intergration and active device development: (1) the directed structuring of materials at the nanoscale through pattening and material growth methods, (2) the...electroluminescence (EL) that can be of use in fields as diverse as optical communications , spectroscopy, and environmental and industrial sensing. The RC structure...TFEL) devices already occupy a segment of the large-area, high-resolution, flat-panel-display market . The AC-TFEL displays, which consist of a

  18. Temperature-Dependent Electric Field Poling Effects in CH3NH3PbI3 Optoelectronic Devices.

    Science.gov (United States)

    Zhang, Chuang; Sun, Dali; Liu, Xiaojie; Sheng, Chuan-Xiang; Vardeny, Zeev Valy

    2017-03-17

    Organo-lead halide perovskites show excellent optoelectronic properties; however, the unexpected inconsistency in forward-backward I-V characteristics remains a problem for fabricating solar panels. Here we have investigated the reasons behind this "hysteresis" by following the changes in photocurrent and photoluminescence under electric field poling in transverse CH3NH3PbI3-based devices from 300 to 10 K. We found that the hysteresis disappears at cryogenic temperatures, indicating the "freeze-out" of the ionic diffusion contribution. When the same device is cooled under continuous poling, the built-in electric field from ion accumulation brings significant photovoltaic effect even at 10 K. From the change of photoluminescence upon polling, we found a second dipole-related mechanism which enhances radiative recombination upon the alignment of the organic cations. The ionic origin of hysteresis was also verified by applying a magnetic field to affect the ion diffusion. These findings reveal the coexistence of ionic and dipole-related mechanisms for the hysteresis in hybrid perovskites.

  19. Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices

    Directory of Open Access Journals (Sweden)

    Chen-hui Yu

    2014-01-01

    Full Text Available This paper presents an analysis of crystalline structures of Si-doped Al0.4Ga0.6N layers grown on not-intentionally doped AlGaN buffer layer with an AlN nucleation layer by metal organic chemical vapor deposition. Weak cubic Al0.4Ga0.6N (002 and (103 reflection peaks are observed in high-resolution XRD θ/2θ scans and cubic Al0.4Ga0.6N (LO mode in Raman scattering spectroscopy. These cubic subgrains are localized at the bottom interface of Si-doped layer due to the pulsed lower growth temperature and rich hydrogen atmosphere at the start of silane injection. Their appearance has no direct relationship with the buffer and nucleation layer. This study is helpful not only to understand fundamental properties of high aluminum content Si-doped AlGaN alloys but also to provide specific guidance on the fabrication of multilayer optoelectronic devices where weak cubic subgrains potentially occur and exert complicated influences on the device performance.

  20. Self-Supporting Ion Gels for Electrochemiluminescent Sticker-Type Optoelectronic Devices

    Science.gov (United States)

    Hong, Kihyon; Kwon, Yeong Kwan; Ryu, Jungho; Lee, Joo Yul; Kim, Se Hyun; Lee, Keun Hyung

    2016-07-01

    Nowadays, there has been an increasing demand to develop low-cost, disposable or reusable display devices to meet and maximize short-term user convenience. However, the disposable device has unfortunately not materialized yet due to the light-emitting materials and fabrication process issues. Here, we report sticker-type electrochemiluminescent (ECL) device using self-supporting, light-emitting gel electrolytes. The self-supporting ion gels were formulated by mixing a network-forming polymer, ionic liquid, and metal complex luminophore. The resulting ion gels exhibit excellent mechanical strength to form free-standing rubbery light-emitting electrolyte films, which enables the fabrication of sticker-type display by simple transfer and lamination processes on various substrates. The sticker-type ECL devices can be operated under an AC bias and exhibit a low operating voltage of 4 V (peak-to-peak voltage) with a maximum luminance of 90 cd/m2. It is notable that the result is the first work to realize sticker displays based on electrochemical light emitting devices and can open up new possibilities for flexible or disposal display.

  1. Electrochemistry, polymers and opto-electronic devices: a combination with a future

    Directory of Open Access Journals (Sweden)

    De Paoli Marco-A.

    2002-01-01

    Full Text Available Electrochemistry came into life with the invention of the pile, by Volta in 1800. He combined different metal discs with a piece of tissue, swollen with an aqueous salt solution. The so-called Pila di Volta used a polymer for the first time in an electrochemical device and can be seen as a powerful idea to create new devices. Recently, polymers became an alternative to make thin and flexible devices. Thus, we find transparent plastic electrodes based on poly(ethylene terephtalate coated with a transition metal oxide. There are also polymer electrolytes based on complexes of inorganic salts and poly(ethylene oxide derivatives, with reasonable ionic conductivity in the absence of solvents. Finally, the electroactive polymers are efficient substitutes for the inorganic semiconductors because they can be synthetically tailored to produce the desired electronic answer. Combining these materials it is possible to assemble different types of electro-optical devices, like electrochromic, photoelectrochemical and light-emitting electrochemical cells.

  2. Electronic characterisation and computer modelling of thin film materials and devices for optoelectronic applications

    CERN Document Server

    Zollondz, J

    2001-01-01

    lock-in techniques. A comparison was made of the two-beam photogating experiment, with a single beam current-voltage measurement, which is also influenced by trapped space charge, as indicators of defect distributions. It was found that the photogating measurement is a more accurate indicator of the distribution of space charge, and hence defects, within a device. Application of the photogating effect in a colour detector is introduced and detector structure proposed. The simple structure and the thin film technique of a-Si:H deposition suggests the possibility of a low cost photodetector with high colour resolution. Double beam collection efficiency measurements have been carried out on hydrogenated amorphous silicon p-i-n devices. Apparent collection efficiencies higher than unity were observed, and explained by a process identified as photogating, in which a low intensity weakly absorbed probe beam modulates the photocurrent produced by a high intensity strongly absorbed bias beam. Computer simulations wer...

  3. Excitation energy transfer in organic materials: from fundamentals to optoelectronic devices.

    Science.gov (United States)

    Laquai, Frédéric; Park, Young-Seo; Kim, Jang-Joo; Basché, Thomas

    2009-07-16

    In this review, we discuss investigations of electronic excitation energy transfer in conjugated organic materials at the bulk and single molecule level and applications of energy transfer in fluorescent and phosphorescent organic light emitting devices. A brief overview of common descriptions of energy transfer mechanisms is given followed by a discussion of some basic photophysics of conjugated materials including the generation of excited states and their subsequent decay through various channels. In particular, various examples of bimolecular excited state annihilation processes are presented. Energy transfer studies at the single molecule level provide a new tool to study electronic couplings in simple donor/acceptor dyads and conjugated polymers. Finally, energy transfer in organic electronic devices is discussed with particular emphasis on triplet emitter doped OLEDs and blends for white light emission.

  4. Optoelectronic Devices and Related Physical Phenomena in Thin Film Semiconductor Configurations.

    Science.gov (United States)

    1986-05-01

    Robinson, W. K. Marshall, J. Katz, J. S. Smith, and A. Yariv, " Monolithically Integrated Array of GaAlAs Electroabsorption Modulators," Electron... monolithic array of GaAlAs electroabsorption modulator has been demonstrated by reverse bias operation of the separate contact array. This device may be...Katz, C. Lindsey, S. Margalit, A. Yariv, "Control of Mutual Phase Locking of Monolithically Integrated Semiconductor Lasers," Appl. Phys. Lett., 43

  5. Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

    Science.gov (United States)

    Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

    2017-03-01

    We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

  6. Plasma process for development of a bulk heterojunction optoelectronic device: A highly sensitive UV detector

    Science.gov (United States)

    Sharma, Shyamalima; Pal, Arup R.; Chutia, Joyanti; Bailung, Heremba; Sarma, Neelotpal S.; Dass, Narendra N.; Patil, Dinkar

    2012-08-01

    Deposition of composite thin film of polyaniline/TiO2 (PAni/TiO2) has been carried out by a combined process of magnetron sputtering and plasma polymerization at a pressure of 5 × 10-2 Torr using titanium as a target material for sputtering, aniline as monomer, oxygen as reactive gas and argon as carrier gas/ion source for sputtering. The deposition has been achieved using direct current (dc) discharge power of 35 W for sputtering and radio frequency (rf) power of 8-12 W at substrate bias values in the ranges of -80 to -100 V for polymerization. The composition of the film has been studied using infrared spectroscopy, Raman spectroscopy as well as X-ray photoelectron spectroscopy. The morphology of the film has been characterized with the help of a transmission electron microscopy and atomic force microscopy. The ultraviolet (UV) photo-stability of the composite film has been studied by exposing the film deposited on silicon substrate for different reaction times up to 1 h under UV radiation at wave length range of 280-400 nm with an intensity of 0.4 mW/cm2. An organic/inorganic nanocomposite film based photovoltaic device has been developed. The device has an aluminum/composite/indium tin oxide sandwiched structure that shows strong photoresponse in ultraviolet region and hence the device has potential for application as an UV detector.

  7. Optoelectronic stereoscopic device for diagnostics, treatment, and developing of binocular vision

    Science.gov (United States)

    Pautova, Larisa; Elkhov, Victor A.; Ovechkis, Yuri N.

    2003-08-01

    Operation of the device is based on alternative generation of pictures for left and right eyes on the monitor screen. Controller gives pulses on LCG so that shutter for left or right eye opens synchronously with pictures. The device provides frequency of switching more than 100 Hz, and that is why the flickering is absent. Thus, a separate demonstration of images to the left eye or to the right one in turn is obtained for patients being unaware and creates the conditions of binocular perception clsoe to natural ones without any additional separation of vision fields. LC-cell transfer characteristic coodination with time parameters of monitor screen has enabled to improve stereo image quality. Complicated problem of computer stereo images with LC-glasses is so called 'ghosts' - noise images that come to blocked eye. We reduced its influence by adapting stereo images to phosphor and LC-cells characteristics. The device is intended for diagnostics and treatment of stabismus, amblyopia and other binocular and stereoscopic vision impairments, for cultivating, training and developing of stereoscopic vision, for measurements of horizontal and vertical phoria, phusion reserves, the stereovision acuity and some else, for fixing central scotoma borders, as well as suppression scotoma in strabismus too.

  8. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  9. Beyond Graphene: Advanced 2D Electronic and Optoelectronic Crystals and Devices for Next Generation Applications

    Science.gov (United States)

    2015-06-25

    collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources...materials and nano-device. Workshop Schedule Wednesday, March 06, 2013, HUB, Alumni Hall Time Activity 7:30 Breakfast/Registration 8:40... Lunch (on your own) 1:15 - 2:45 1:15 1:45 2:15 Theory Vivek Shenoy (UPenn) Boris Yakobson (Rice) Evan Reed (Stanford) 2:45 Coffee Break 3:00

  10. Siloxane-based photonic structures and their application in optic and optoelectronic devices

    Science.gov (United States)

    Pudiš, Dušan; Šušlik, Łuboš; Jandura, Daniel; Goraus, Matej; Figurová, Mária; Martinček, Ivan; Gašo, Peter

    2016-12-01

    Polymer based photonics brings simple and cheap solutions often with interesting results. We present capabilities of some siloxanes focusing on polydimethylsiloxane (PDMS) with unique mechanical and optical properties. In combination of laser lithography technologies with siloxane embossing we fabricate different grating structures with one- and two-dimensional symmetry. Concept of PDMS based thin membranes with patterned surface as an effective diffraction element for modification of radiation pattern diagram of light emitting diodes is here shown. Also the PDMS was used as an alternative material for fabrication of complicated waveguide with implemented Bragg grating. For lab-on-chip applications, we patterned PDMS microstructures for microfluidic and micro-optic devices.

  11. Nanowire Optoelectronics

    Directory of Open Access Journals (Sweden)

    Wang Zhihuan

    2015-12-01

    Full Text Available Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs, lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in “volumetric modes,”which have so far been presented in terms of Fabry–Perot (FP, and helical resonance modes. We report on finite-difference timedomain (FDTD simulations with the aim of identifying the dependence of these modes on geometry (length, width, tapering, shape (cylindrical, hexagonal, core–shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption and downward transitions (emission of light inNWs; rather, the electronic transition rates should be considered. We discuss this “rate management” scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  12. Optimization of light out-coupling in optoelectronic devices using nanostructured surface

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini;

    the overall efficiency of the LEDs. In this paper we have developed various methods for two important semiconductors: silicon carbide (SiC) and gallium nitride (GaN), and demonstrated enormous extraction efficiency enhancement. SiC is an important su bstrate for LED devices. It has refractive index of 2.......6, and only a few percent of light could escape from it. We have developed periodic nanocone structures by using electron - beam lithography, periodic nanodome structures by using nanosphere lithography, random nanostructures by using self - assembled metal nanoparticles, and random nanostructures by directly...... using the self - masking effect of thin Al films, as shown in Fig.1. All these nanostructures have shown increased transmittance or reduced reflectance c ompared to the bare surface. Fluorescent SiC samples show tremendous photoluminescence enhancement (up to 210%) after the surface nanostructuring...

  13. Nanomaterials, Devices and Interface Circuits: Applications for Optoelectronic and Energy Harvesting

    Science.gov (United States)

    Purahmad, Mohsen

    In the first part of this dissertation, the effect of surface passivation on the near-band-edge emission (NBE) of as grown ZnO nanowires has been studied. It was shown that decorating the ZnO nanowires with sputtered metallic nano-particles can strongly enhance the NBE of as grown ZnO nanowires. Since the ZnO NWs have a weak NBE, numerous studies have been done to enhance the NBE and photoluminescence (PL) efficiency of ZnO NWs. Different methods such as polymer coating of ZnO NWs and hydrogen plasma treatment are seen to boost the NBE and photoluminescence efficiency of ZnO NWs. Recently, among the different passivation methods the effect of metallic nanoparticles (NPs) on PL properties of ZnO NWs have been the focus of much research. In most studies an enhancement of NBE was observed and the results were interpreted in terms of surface plasmons, unintentional hydrogen incorporation and the nature of the contact formed between the metal and ZnO NWs. Our study demonstrates that decorating the ZnO NWs with metal NPs in the presence of high energy Ar atoms cleans the surface of ZnO NWs from near surface traps and surface adsorbed species, thus it leads to a strong enhancement of NBE emission and a relative reduction of visible peak. In the second part of this thesis, the piezoelectric properties of ZnO nanowires have been the focus of the study. Since demonstration of the first nano-scale energy harvester device based on one single ZnO NWs a comprehensive model which can explain the generation of strain induced piezoelectric field in the presence of free carriers has not been proposed. The piezoelectric constitutive equations, which are used to calculate the strain induced piezoelectric potential, can be applied in a medium with zero or negligible free carriers. Therefore, in case of piezoelectric metal oxide semiconductor materials such as ZnO NWs with a free carrier density about 1018 cm-3 the constitutive equations cannot be applied directly. Here, we have

  14. Single-photon superradiance and cooperative Lamb shift in an optoelectronic device (Conference Presentation)

    Science.gov (United States)

    Sirtori, Carlo

    2017-02-01

    Superradiance is one of the many fascinating phenomena predicted by quantum electrodynamics that have first been experimentally demonstrated in atomic systems and more recently in condensed matter systems like quantum dots, superconducting q-bits, cyclotron transitions and plasma oscillations in quantum wells (QWs). It occurs when a dense collection of N identical two-level emitters are phased via the exchange of photons, giving rise to enhanced light-matter interaction, hence to a faster emission rate. Of great interest is the regime where the ensemble interacts with one photon only and therefore all of the atoms, but one, are in the ground state. In this case the quantum superposition of all possible configurations produces a symmetric state that decays radiatively with a rate N times larger than that of the individual oscillators. This phenomenon, called single photon superradiance, results from the exchange of real photons among the N emitters. Yet, to single photon superradiance is also associated another collective effect that renormalizes the emission frequency, known as cooperative Lamb shift. In this work, we show that single photon superradiance and cooperative Lamb shift can be engineered in a semiconductor device by coupling spatially separated plasma resonances arising from the collective motion of confined electrons in QWs. These resonances hold a giant dipole along the growth direction z and have no mutual Coulomb coupling. They thus behave as a collection of macro-atoms on different positions along the z axis. Our device is therefore a test bench to simulate the low excitation regime of quantum electrodynamics.

  15. Study of silicone-based materials for the packaging of optoelectronic devices

    Science.gov (United States)

    Lin, Yeong-Her

    degradations, and thus cause reliability issues and shorten the lifetime. A new high performance silicone has been developed and its performance has been compared with other commercial silicone products in the packaging of high power white LEDs. The high performance silicone also has better results than commercial high refractive index silicone and optical grade epoxy under JEDEC reliability standard for moisture sensitivity test. In synthesis of red dye-doped particles by sol-gel method, it is a novel method to get high color rendering index (CRI) LEDs. These red dye-doped particles, with average diameter of 5 mum, can be mixed with liquid encapsulants to form a uniform distribution in polymer matrix. The red dye-doped particles can be excited by phosphor-emitted yellow light instead of blue light from LED chip. Therefore, warm white LEDs with high CRI can be gotten at high lumen efficiency. The second part of this work is silicone elastomer for biomedical applications, especially in making urological implantable devices. A cross-linked, heat curable, addition-reaction silicone material is prepared. The material may be molded or formed into one or more medical devices. One such medical device could be a catheter used in urological applications. The material is a long term indwelling material that resists encrustation like a metal stent, but is more comfortable because it is silicone-based. The material can be made relatively cheaply compared to metal stents. Furthermore, the material is biocompatible with bladder epithelial cells.

  16. Optoelectronic Mounting Structure

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Gene R. (Albuquerque, NM); Armendariz, Marcelino G. (Albuquerque, NM); Baca, Johnny R. F. (Albuquerque, NM); Bryan, Robert P. (Albuquerque, NM); Carson, Richard F. (Albuquerque, NM); Chu, Dahwey (Albuquerque, NM); Duckett, III, Edwin B. (Albuquerque, NM); McCormick, Frederick B. (Albuquerque, NM); Peterson, David W. (Sandia Park, NM); Peterson, Gary D. (Albuquerque, NM); Reber, Cathleen A. (Corrales, NM); Reysen, Bill H. (Lafayette, CO)

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  17. Optoelectronic Applications of Colloidal Quantum Dots

    Science.gov (United States)

    Wang, Zhiping; Zhang, Nanzhu; Brenneman, Kimber; Wu, Tsai Chin; Jung, Hyeson; Biswas, Sushmita; Sen, Banani; Reinhardt, Kitt; Liao, Sicheng; Stroscio, Michael A.; Dutta, Mitra

    This chapter highlights recent optoelectronic applications of colloidal quantum dots (QDs). In recent years, many colloidal QD-based optoelectronic devices, and device concepts have been proposed and studied. Many of these device concepts build on traditional optoelectronic device concepts. Increasingly, many new optoelectronic device concepts have been based on the use of biomolecule QD complexes. In this chapter, both types of structures are discussed. Special emphasis is placed on new optoelectronic device concepts that incorporate DNA-based aptamers in biomolecule QD complexes. Not only are the extensions of traditional devices and concepts realizable, such as QD-based photo detectors, displays, photoluminescent and photovoltaic devices, light-emitting diodes (LEDs), photovoltaic devices, and solar cells, but new devices concepts such a biomolecule-based molecular sensors possible. This chapter highlights a number of such novel QD-based devices and device concepts.

  18. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

    Science.gov (United States)

    Horsley, Kimberly Anne

    Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

  19. Laser writing: A new technique for fabrication of electronic and optoelectronic Y-Ba-Cu-O devices and circuits

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, W.; Kula, W.; Sobolewski, R. [Univ. of Rochester, NY (United States); Gavaler, J.R. [Westinghouse Science and Technology Center, Pittsburgh, PA (United States)

    1994-12-31

    The authors report their studies on the fabrication of YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) thin-film structures, patterned with a laser-writing technique. They demonstrate that this patterning method can be successfully implemented in fabricating a variety of electronic and optoelectronic high-{Tc} devices and circuits. Depending on the film`s initial oxygen content and the ambient atmosphere, laser heating allows oxygen to diffuse in or out of the annealed region and form oxygen-rich (YBa{sub 2}Cu{sub 3}O{sub 7}; superconducting) patterns next to oxygen-depleted (YBa{sub 2}Cu{sub 3}O{sub 6}; insulating at low temperature) ones. The width of the YBa{sub 2}Cu{sub 3}O{sub 7-}YBa{sub 2}Cu{sub 3}O{sub 6} interface is less than 1 {mu}m. The laser-writing procedure is noninvasive, does not require a patterning mask, and results in completely planar, monolithic structures, free of surface contamination or edge degradation. Their oxygen-rich lines (typically 4 to 60 {mu}m wide), patterned on the high-quality, intentionally deoxygenated YBCO films, exhibit zero resistivity at 90 K and critical current density of approximately 3 MA/cm{sup 2} at 77 K. Their superconducting properties remain unchanged even after eight months of shelf storage. On the other hand, oxygen-poor regions are semiconducting and characterized at low temperatures by a three-dimensional, variable-length hopping transport. Below 100 K, they exhibit low microwave losses, their dc resistance is above 10 M{Omega}/square, and dielectric permittivity is below 20 at about 10 GHz. A number of devices and circuits patterned by laser writing, such as a microbridge, coplanar transmission line, open-ended coplanar microwave resonator, photoconductive switch, and YBCO field-effect transistor, are presented. All structures are intrinsic to the YBCO material, and they combine in a new and unique way superconducting and dielectric properties of the YBa{sub 2}Cu{sub 3}O{sub 7} and YBa{sub 2}Cu{sub 3}O{sub 6} phases.

  20. Gallium nitride optoelectronic devices

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.

    1972-01-01

    The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

  1. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  2. Optoelectronic packaging: A review

    Energy Technology Data Exchange (ETDEWEB)

    Carson, R.F.

    1993-09-01

    Optoelectronics and photonics hold great potential for high data-rate communication and computing. Wide using in computing applications was limited first by device technologies and now suffers due to the need for high-precision, mass-produced packaging. The use of phontons as a medium of communication and control implies a unique set of packaging constraints that was not present in traditional telecommunications applications. The state-of-the-art in optoelectronic packaging is now driven by microelectric techniques that have potential for low cost and high volume manufacturing.

  3. Nanotube electronics and optoelectronics

    Directory of Open Access Journals (Sweden)

    Phaedon Avouris

    2006-10-01

    Full Text Available Among the many materials that have been proposed to supplement and, in the long run, possibly succeed Si as a basis for nanoelectronics, carbon nanotubes (CNTs have attracted the most attention. CNTs are quasi-one-dimensional materials with unique properties ideally suited for electronics. We briefly discuss the electrical and optical properties of CNTs and how they can be employed in electronics and optoelectronics. We focus on single CNT transistors, their fabrication, assembly, doping, electrical characteristics, and integration. We also address the possible use of CNTs in optoelectronic devices such as electroluminescent light emitters and photodetectors.

  4. Design, synthesis, and characterization of TPA-thiophene-based amide or imine functionalized molecule for potential optoelectronic devices

    Science.gov (United States)

    Sarswat, Prashant K.; Sathyapalan, Amarchand; Zhu, Yakun; Free, Michael L.

    2013-01-01

    New sets of molecules containing tri-phenyl-amine (TPA) core and thiophene unit with amide and imine functional groups are designed, synthesized, characterized, and compared. These are solution processable small molecules with high mobility. The newly designed molecules have better solubility due to the C=N (imine) and CONH2 (amide) moiety as compared to the established molecules with CH=CH (methine) for optoelectronic applications. They have an optimal energy band gap, which indicates their potential utility in a variety of optoelectronic applications. These molecules also show efficient intermolecular charge transfer mechanisms similar to conventional organic semiconducting molecules as evidenced by optical measurements. Density functional theory simulation results show that the localization of the frontier highest occupied molecular orbital is around the TPA core for molecules coupled with imine and amide, and is reasonably stable.

  5. Multiscale modeling of nanostructured ZnO based devices for optoelectronic applications: Dynamically-coupled structural fields, charge, and thermal transport processes

    Science.gov (United States)

    Abdullah, Abdulmuin; Alqahtani, Saad; Nishat, Md Rezaul Karim; Ahmed, Shaikh; SIU Nanoelectronics Research Group Team

    Recently, hybrid ZnO nanostructures (such as ZnO deposited on ZnO-alloys, Si, GaN, polymer, conducting oxides, and organic compounds) have attracted much attention for their possible applications in optoelectronic devices (such as solar cells, light emitting and laser diodes), as well as in spintronics (such as spin-based memory, and logic). However, efficiency and performance of these hybrid ZnO devices strongly depend on an intricate interplay of complex, nonlinear, highly stochastic and dynamically-coupled structural fields, charge, and thermal transport processes at different length and time scales, which have not yet been fully assessed experimentally. In this work, we study the effects of these coupled processes on the electronic and optical emission properties in nanostructured ZnO devices. The multiscale computational framework employs the atomistic valence force-field molecular mechanics, models for linear and non-linear polarization, the 8-band sp3s* tight-binding models, and coupling to a TCAD toolkit to determine the terminal properties of the device. A series of numerical experiments are performed (by varying different nanoscale parameters such as size, geometry, crystal cut, composition, and electrostatics) that mainly aim to improve the efficiency of these devices. Supported by the U.S. National Science Foundation Grant No. 1102192.

  6. Photonics and Optoelectronics

    Science.gov (United States)

    2013-03-07

    DARPA NNI/NNCO BRI (2D Materials & Devices Beyond Graphene – planning phase) LRIR PIs Szep – RY: PICS Quantum Information...vertically from plasmonic filters into Si CMOS image sensor diodes via PMMA dielectric and SiNx vertical light couplers - •Designed and implemented signal...model) gernot.pomrenke@afosr.af.mil Future: Metasurfaces/ Meta Photonics, Quantum Integrated Nanophotonics, Ultra Low Power, Graphene Optoelectronics

  7. Graphene Photonics and Optoelectronics

    OpenAIRE

    Bonaccorso, F.; Z. Sun; Hasan, T.; Ferrari, A. C.

    2010-01-01

    The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, ...

  8. Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

    KAUST Repository

    Khan, Jafar Iqbal

    2016-03-03

    Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials\\' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Dedicated optoelectronic stochastic parallel processor for real-time image processing: motion-detection demonstration and design of a hybrid complementary-metal-oxide semiconductor- self-electro-optic-device-based prototype.

    Science.gov (United States)

    Cassinelli, A; Chavel, P; Desmulliez, M P

    2001-12-10

    We report experimental results and performance analysis of a dedicated optoelectronic processor that implements stochastic optimization-based image-processing tasks in real time. We first show experimental results using a proof-of-principle-prototype demonstrator based on standard silicon-complementary-metal-oxide-semiconductor (CMOS) technology and liquid-crystal spatial light modulators. We then elaborate on the advantages of using a hybrid CMOS-self-electro-optic-device-based smart-pixel array to monolithically integrate photodetectors and modulators on the same chip, providing compact, high-bandwidth intrachip optoelectronic interconnects. We have modeled the operation of the monolithic processor, clearly showing system-performance improvement.

  10. Effects of Thickness and Annealing on Optoelectronic Properties of Electrodeposited ZnS Thin Films for Photonic Device Applications

    Science.gov (United States)

    Echendu, O. K.; Dharmadasa, I. M.

    2013-12-01

    Thin layers of ZnS with thicknesses of 400 nm, 500 nm, and 700 nm have been electrodeposited on glass/fluorine-doped tin oxide substrates using a simple two-electrode setup under similar conditions. Structural characterization of the layers using x-ray diffraction (XRD) measurements showed that they were amorphous. The results of optical characterization carried out in the wavelength range of 315 nm to 800 nm using spectrophotometry revealed that the optical properties of the layers are strongly influenced by the film thickness as well as annealing conditions. The values of the refractive index, extinction coefficient, absorption coefficient, and dielectric constant obtained from normal-incidence transmittance spectra were generally lower after annealing, showing also the influence of postdeposition annealing on the deposited ZnS layers. Electrical characterization of the layers, using direct-current current-voltage measurement under dark conditions at room temperature, shows that the resistivity of the as-deposited and annealed layers is in the range of 1.4 × 104 Ω cm to 2.5 × 104 Ω cm and 2.5 × 104 Ω cm to 3.1 × 104 Ω cm, respectively. The results suggest that the optoelectronic properties can be tuned for particular applications by adjusting the thickness of the layers appropriately.

  11. Growth of polar and non-polar nitride semiconductor quasi-substrates by hydride vapor phase epitaxy for the development of optoelectronic devices by molecular beam epitaxy

    Science.gov (United States)

    Moldawer, Adam Lyle

    The family of nitride semiconductors has had a profound influence on the development of optoelectronics for a large variety of applications. However, as of yet there are no native substrates commercially available that are grown by liquid phase methods as with Si and GaAs. As a result, the majority of electronic and optoelectronic devices are grown heteroepitaxially on sapphire and SiC. This PhD research addresses both the development of polar and non-polar GaN and AIN templates by Hydride Vapor Phase Epitaxy (HVPE) on sapphire and SiC substrates, as well as the growth and characterization of optoelectronic devices on these templates by molecular beam epitaxy (MBE). Polar and non-polar GaN templates have been grown in a vertical HVPE reactor on the C- and R-planes of sapphire respectively. The growth conditions have been optimized to allow the formation for thick (50um) GaN templates without cracks. These templates were characterized structurally by studying their surface morphologies by SEM and AFM, and their structure through XRD and TEM. The polar C-plane GaN templates were found to be atomically smooth. However, the surface morphology of the non-polar GaN films grown on the R-plane of sapphire were found to have a facetted surface morphology, with the facets intersecting at 120° angles. This surface morphology reflects an equilibrium growth, since the A-plane of GaN grows faster than the M-planes of GaN due to the lower atomic density of the plane. For the development of deep-UV optoelectronics, it is required to grow AIGaN quantum wells on AIN templates. However, since AIN is a high melting point material, such templates have to be grown at higher temperatures, close to half the melting point of the material (1500 °C). As these temperatures cannot be easily obtained by traditional furnace heating, an HVPE reactor has been designed to heat the substrate inductively to these temperatures. This apparatus has been used to grow high-quality, transparent AIN films

  12. Research progress in graphene use in photonic and optoelectronic devices%石墨烯光电子器件的应用研究进展

    Institute of Scientific and Technical Information of China (English)

    李绍娟; 甘胜; 沐浩然; 徐庆阳; 乔虹; 李鹏飞; 薛运周; 鲍桥梁

    2014-01-01

    自2004年被发现以来,石墨烯因其卓越的光学和电学性能及其与硅基半导体工艺的兼容性,备受学术界和工业界的广泛关注。作为一种独特的二维原子晶体薄膜材料,石墨烯有着优异的机械性能、超高的热导率和载流子迁移率、超宽带的光学响应谱及极强的非线性光学特性,使其在新型光学和光电器件领域具有得天独厚的优势。一系列基于石墨烯的新型光电器件先后被研制出,已显示出优异的性能和良好的应用前景。此外,近期石墨烯表面等离子体激元的发现及太赫兹器件的研究进一步促进了石墨烯基光电器件的蓬勃发展。综述重点总结近年来石墨烯在超快脉冲激光器、光调制器、光探测器以及表面等离子体领域的应用研究进展,并进一步分析目前所面临的主要问题、挑战及其发展趋势。%Graphene has very significant optical and electronic properties, which attract enormous attention. As a unique two-di-mensional crystal with one atom thickness, it has high electron and thermal conductivities in addition to ? exibility, robustness and impermeability to gases. Its ultra-broad band optical response and excellent non-linear optical properties make it a wonderful material for developing next generation photonic and optoelectronic devices. The fabrication of graphene-based devices is compatible with the existing semiconductor process, which has stimulated lots of graphene-based hybrid silicon-CMOS ( Complementary metal-oxide-semiconductor transistor) applications. Here we review the latest progress in graphene-based photonic and optoelectronic devices, ranging from pulsed lasers, modulators and photodetectors to optical sensors. Other exciting topics such as graphene surface plas-mons and their terahertz applications are also discussed.

  13. Ge-on-Si optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jifeng, E-mail: Jifeng.Liu@Dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Camacho-Aguilera, Rodolfo; Bessette, Jonathan T.; Sun, Xiaochen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wang Xiaoxin [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Cai Yan; Kimerling, Lionel C.; Michel, Jurgen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2012-02-01

    Electronic-photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic-photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become an attractive solution for monolithic optoelectronics. In this paper we will review recent progress in Ge-on-Si optoelectronics, including photodetectors, electroabsorption modulators, and lasers. The performance of these devices has been enhanced by band-engineering such as tensile strain and n-type doping, which transforms Ge towards a direct gap material. Selective growth reduces defect density and facilitates monolithic integration at the same time. Ge-on-Si photodetectors have approached or exceeded the performance of their III-V counterparts, with bandwidth-efficiency product > 30 GHz for p-i-n photodiodes and bandwidth-gain product > 340 GHz for avalanche photodiodes. Enhanced Franz-Keldysh effect in tensile-strained Ge offers ultralow energy photonic modulation with < 30 fJ/bit energy consumption and > 100 GHz intrinsic bandwidth. Room temperature optically-pumped lasing as well as electroluminescence has also been achieved from the direct gap transition of band-engineered Ge-on-Si waveguides. These results indicate that band-engineered Ge-on-Si is promising to achieve monolithic active optoelectronic devices on a Si platform.

  14. Selective Processing Techniques for Electronics and Opto-Electronic Applications: Quantum-Well Devices and Integrated Optic Circuits

    Science.gov (United States)

    1993-02-10

    conventionally 11. LASER FABRICATION OF RIB.LIKE WAVEGUIDES fabricated devices. Experimental results are described by simple theoretical models. The technique...the and important issue which laser fabrication techniques may be experiment for the range of angles used. capable of addressing, Finally, the

  15. Au@polymer core-shell nanoparticles for simultaneously enhancing efficiency and ambient stability of organic optoelectronic devices.

    Science.gov (United States)

    Kim, Taesu; Kang, Hyunbum; Jeong, Seonju; Kang, Dong Jin; Lee, Changyeon; Lee, Chun-Ho; Seo, Min-Kyo; Lee, Jung-Yong; Kim, Bumjoon J

    2014-10-08

    In this paper, we report and discuss our successful synthesis of monodispersed, polystyrene-coated gold core-shell nanoparticles (Au@PS NPs) for use in highly efficient, air-stable, organic light-emitting diodes (OLEDs) and organic photovoltaics (OPVs). These core-shell NPs retain the dual functions of (1) the plasmonic effect of the Au core and (2) the stability and solvent resistance of the cross-linked PS shell. The monodispersed Au@PS NPs were incorporated into a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film that was located between the ITO substrate and the emitting layer (or active layer) in the devices. The incorporation of the Au@PS NPs provided remarkable improvements in the performances of both OLEDs and OPVs, which benefitted from the plasmonic effect of the Au@PS NPs. The OLED device with the Au@PS NPs achieved an enhancement of the current efficiency that was 42% greater than that of the control device. In addition, the power conversion efficiency was increased from 7.6% to 8.4% in PTB7:PC71BM-based OPVs when the Au@PS NPs were embedded. Direct evidence of the plasmonic effect on optical enhancement of the device was provided by near-field scanning optical microscopy measurements. More importantly, the Au@PS NPs induced a remarkable and simultaneous improvement in the stabilities of the OLED and OPV devices by reducing the acidic and hygroscopic properties of the PEDOT:PSS layer.

  16. Effect of sputtering power on crystallinity, intrinsic defects, and optical and electrical properties of Al-doped ZnO transparent conducting thin films for optoelectronic devices

    Science.gov (United States)

    Hu, Yu Min; Li, Jung Yu; Chen, Nai Yun; Chen, Chih Yu; Han, Tai Chun; Yu, Chin Chung

    2017-02-01

    -based optoelectronic devices for industrial production.

  17. Application of Graphene in Semiconductor Optoelectronic Devices%石墨烯在半导体光电器件中的应用

    Institute of Scientific and Technical Information of China (English)

    庞渊源

    2011-01-01

    Graphene, as a multifunctional two-dimensional nanomaterial, has inspired the considerable interests on its application in novel nanodevices.In this paper, the optoelectronic function of the complexes of typical semiconductors and graphene was reviewed based on the graphene's advantages of transmission, flexibility, turnable energy bandgap, and high electron mobility.It presented the representative application of graphene in inorganic and organic light-emitting diodes, solar cells, and nanogenerators.It is expected that graphene would play an important role for further nanometer sized electronic and photonic devices in the post-Mole era.%基于石墨烯透明、软性、能带结构连续可调、电子迁移率高等一系列优点,着眼于石墨烯与其他半导体光电功能材料的复合,对石墨烯在有机和无机发光二极管、太阳能电池、纳米发电机等方面的应用和研究进展进行了介绍.

  18. 石墨烯在有机光电器件中的应用研究进展%The Application and Progress of Graphene for Organic Optoelectronic Devices

    Institute of Scientific and Technical Information of China (English)

    李兴鳌; 任明伟; 任睿毅; 苏丹; 杨建平

    2012-01-01

    The basic properties and several preparation methods of graphene are summarized. Its application on organic field-effect transistor (OFET) .organic light-emitting diode (OLED) .organic solar cells (OSC) and other areas of organic optoelectronic devices is reviewed. The future development prospect of graphene on organic optoelectronic devices are discussed.%归纳了石墨烯的基本性质及常用的几种基本制备方法,综述了石墨烯在有机场效应晶体管( OFET)、有机发光二级管(OLED)、有机太阳能电池(OSC)等有机光电器件领域的应用研究现状,展望了石墨烯在有机光电器件领域未来的发展前景.

  19. Quantum Transport and Optoelectronics in Gapped Graphene Nanodevices

    Science.gov (United States)

    2016-11-30

    Performance 3. DATES COVERED (From - To) 01 Aug 2011 to 31 Jul 2016 4. TITLE AND SUBTITLE QUANTUM TRANSPORT AND OPTOELECTRONICS IN GAPPED GRAPHENE...nanodevices. To achieve this we will combine optoelectronic and plasmonic device structures with atomically seamless electrical contacts. The devices will...be based on fully band gap engineered bilayer graphene and graphene nanoribbons, resulting in all-carbon nanoelectronic devices with optoelectronic

  20. In-situ deposition and processing of YBa2Cu3O(7-x) films and multilayers for optoelectronic devices

    Science.gov (United States)

    Villegier, J. C.; Moriceau, H.; Boucher, H.; di Cioccio, L.; Chicault, R.

    1991-03-01

    In situ direct deposition at about 700 C of thin YBa2Cu3O(7-x) superconductive films and multilayers has been done by three techniques using stoichiometric YBa2Cu3O(7-x) sintered targets. Excimer laser ablation in a dc magnetron system with hollow and planar targets leads to 0.5-, 1.2-, and 2.5-in diameter uniformly superconductive layers under static conditions. High critical current densities associated with low resistivity and good epitaxial behavior are achieved on top of MgO, SrTiO3, LaAlO3, and YSZ single-crystal wafers. High-quality c-oriented films are routinely obtained by means of a dc magnetron on large sapphire substrates covered by a YSZ RF sputtered buffer layer. The infrared properties of such films have been checked at 1.15-micron wavelength. In order to achieve active devices, small YBa2Cu3O7-YSZ-Ag tunnel junctions and arrays have been successfully patterned in the superconductor/insulator/normal-metal trilayers using SNOP (selective niobium overlap process).

  1. Optoelectronic characterization of Eu3+ doped MLa2O4 (M = Sr, Ca, Mg nanophosphors for display devices

    Directory of Open Access Journals (Sweden)

    Devender Singh

    2015-12-01

    Full Text Available Eu3+ doped MLa2O4 (M = Mg, Ca, Sr nanophosphors were synthesized by a rapid facile gel combustion route. Luminescence properties of these prepared nanophosphors were analyzed by their excitation and emission spectra. The excitation spectrum consisted of some peaks in the 350–410 nm range due to the f–f transitions. The emission spectra of prepared nanophosphors had transitions of Eu3+ ions i.e. 5D0 → 7F0 (580 nm, 5D0 → 7F1 (594–596 nm, 5D0 → 7F2 (614–618, 628–629 nm, and 5D0 → 7F3 (650–651 nm. The main emission peak was observed at 614–618 nm of 5D0→7F2 transitions of Eu3+ ions. The enhancement in optical properties was observed when materials were reheated at higher temperatures. The nanostructural morphology was confirmed with scanning as well as transmission electron microscopy. The prepared materials were having size in the range of 10–50 nm. X-ray powder diffraction (XRD technique was used to determine the crystal structure and phase of the prepared phosphor materials. XRD measurements revealed that the crystallinity of MLa2O4 materials increased with increasing the sintering temperature. The prepared materials had bright red emitting optical properties that could be suitably applied in various display devices.

  2. III-Nitride nanowire optoelectronics

    Science.gov (United States)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  3. Structural, optical and morphological properties of post-growth calcined TiO{sub 2} nanopowder for opto-electronic device application: Ex-situ studies

    Energy Technology Data Exchange (ETDEWEB)

    Sathyaseelan, B., E-mail: bsseelan03@gmail.com [Dept of Physics, University College of Engineering Arni (A Constituent College of Anna University Chennai) Arni 632326, Tamil Nadu (India); Manikandan, E., E-mail: maniphysics@gmail.com [Central Research Laboratory, Sree Balaji Medical College & Hospital, Bharath University, BIHER, Chrompet, Chennai 600044, Tamil Nadu (India); UNESCO UNISA Africa Chair in Nanosciences & Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Lakshmanan, V. [Dept of Physics, A.C.T College of Engineering & Technology, Nelvoy 603107 Kancheepuram (Dt), Tamil Nadu (India); Baskaran, I. [Dept of Physics, Arignar Anna Government Arts College, Cheyyar 604407, Tamil Nadu (India); Sivakumar, K. [Dept of Physics, Anna University, Chennai 600025, Tamil Nadu (India); Ladchumananandasivam, Rasiah [Dept of Textile Engineering & Post Graduate Programme in Mechanical Engineering Centre of Technology, Federal University of Rio Grande do Norte, Natal (Brazil); Kennedy, J. [UNESCO UNISA Africa Chair in Nanosciences & Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); The MacDiarmid Institute for Advanced Materials and Nanotechnology, PO Box 600, Wellington (New Zealand); Maaza, M., E-mail: maaza@tlabs.ac.za [UNESCO UNISA Africa Chair in Nanosciences & Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa)

    2016-06-25

    Nanocrystalline TiO{sub 2} powders have been selectively prepared by the simple combustion reaction method using urea as a fuel. The crystalline powder was obtained using a silica basin heated directly on a hot plate at 500 °C until self-ignition occurred. After combustion process, the calcined products were obtained by heating the as-prepared powders for 1 h in air atmosphere at various sintering temperatures [500–900 °C]. The obtained nanopowder materials were systematically characterized by X-day diffraction (XRD), micro-Raman, UV–visible absorption (UV–vis), and Fourier transform infrared (FT-IR) spectroscopics. Powder XRD pattern shows the good agreement rutile phase structured TiO{sub 2} and the sharp diffraction peaks indicates good for crystallinity. The size of a symmetry of the nanoparticles have been measured with aid of a scanning electron microscopy (SEM), high resolution transmission electron microscopy (HR-TEM), and Brunauer, Emmett and Teller (BET) surface studies. The crystallinity of the powders was found to increase with respect to calcination temperatures. The average specific surface area of the particle was probed using gas adsorption–desorption measurements. Raman spectroscopy experiment was performed to ascertain the nature of TiO{sub 2} powder quality. UV–vis absorption spectra results showed the changes in the absorption edges of TiO{sub 2} report to increasing the calcinations temperatures. - Highlights: • TiO{sub 2} Nanocrystalline powders were prepared by simple combustion reaction method. • Calcined TiO{sub 2} nanopowder obtained by heating for 1 hr in air atmosphere at 500–900 °C. • Systematic characterization employed by XRD, micro-Raman, Optical, SEM, HRTEM. • The size symmetry of nanoparticles measured by electron microscopes BET methods. • Calcinations raises the crystallinity size enhanced for future opto-electronic devices.

  4. Fiscal Year 2011 Director’s Strategic Initiative Final Report Heterogeneous Device Architectures Incorporating Nitride Semiconductors for Enhanced Functionality of Optoelectronic Devices

    Science.gov (United States)

    2014-03-01

    290-nm-thick silicon dioxide (SiO2) layer, which acted as both a passivation layer and an antireflective coating , was deposited by plasma-enhanced...chemical vapor deposition. The p- and n-type contacts were formed by electron beam evaporation of titanium/ nickel (Ti/Ni). A drawing of the device...emission is collected with a pair of off-axis parabolic mirrors onto a zinc telluride (ZnTe) crystal for polarization sensitive electro-optic sampling

  5. Mid-infrared Semiconductor Optoelectronics

    CERN Document Server

    Krier, Anthony

    2006-01-01

    The practical realisation of optoelectronic devices operating in the 2–10 µm (mid-infrared) wavelength range offers potential applications in a variety of areas from environmental gas monitoring around oil rigs and landfill sites to the detection of pharmaceuticals, particularly narcotics. In addition, an atmospheric transmission window exists between 3 µm and 5 µm that enables free-space optical communications, thermal imaging applications and the development of infrared measures for "homeland security". Consequently, the mid-infrared is very attractive for the development of sensitive optical sensor instrumentation. Unfortunately, the nature of the likely applications dictates stringent requirements in terms of laser operation, miniaturisation and cost that are difficult to meet. Many of the necessary improvements are linked to a better ability to fabricate and to understand the optoelectronic properties of suitable high-quality epitaxial materials and device structures. Substantial progress in these m...

  6. Perovskite Materials: Solar Cell and Optoelectronic Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Bin [ORNL; Geohegan, David B [ORNL; Xiao, Kai [ORNL

    2017-01-01

    Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure, and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.

  7. The armored vehicles optoelectronic devices battlefield laser threat and protection%装甲车辆光电设备的战场激光威胁与防护研究

    Institute of Scientific and Technical Information of China (English)

    邹彪; 胡明侠; 张辽宁

    2013-01-01

    随着激光在战场上的使用,就出现了战场激光威胁与战场激光防护的问题;本文分析了战场激光对装甲车辆光电设备存在的威胁;利用激光与材料相互作用物理学,分析了激光对装甲车辆光电设备的损伤机理,在此基础上给出了激光对光电设备损伤程度的估算公式,说明了装甲车辆光电设备的战场激光防护方法。%Appeared with the use of laser battlefield a battlefield laser threat and battlefield laser protection problems ;This paper analyzes the existence of the threat of the battlefield laser of armored vehicles photoelectric devices ;using laser material interaction physics ,laser armoredthe vehicle damage mechanism of optoelectronic devices , the laser photoelectric equipment damage extent estimation formula given on this basis , battlefield laser protection armored vehicles optoelectronic devices .

  8. Monolayer and Few-Layer All-Inorganic Perovskites as a New Family of Two-Dimensional Semiconductors for Printable Optoelectronic Devices.

    Science.gov (United States)

    Song, Jizhong; Xu, Leimeng; Li, Jianhai; Xue, Jie; Dong, Yuhui; Li, Xiaoming; Zeng, Haibo

    2016-06-01

    Printed flexible photodetectors based on 2D inorganic perovskites with atomic thickness show excellent photosensing with fast rise and decay response times. As-synthesized nanosheets can easily be dispersed in various solvents, leading to large-area, crack-free, low-roughness, flexible films after printing. This study demonstrates that all-inorganic perovskite CsPbX3 nanosheets as a new class of 2D semiconductors have huge potential for flexible optoelectronic applications.

  9. Progress on the optoelectronic functional organic crystals

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Organic crystals constructed by pi-conjugated molecules have been paid great attention to in the field of organic optoelectronic materials. The superiorities of these organic crystal materials, such as high thermal stability, highly ordered structure, and high carrier mobility over the amorphous thin film ma-terials, make them attractive candidates for optoelectronic devices. Single crystal with definite struc-ture provides a model to investigate the basic interactions between the molecules (supramolecular interaction), and the relationship between molecular stacking modes and optoelectronic performance (luminescence and carrier mobility). Through modulating molecular arrangement in organic crystal, the luminescence efficiency of organic crystal has exceeded 80% and carrier mobility has been up to the level of 10 cm2·V?1·s?1. Amplified stimulated emission phenomena have been observed in many crys-tals. In this paper, we will emphatically introduce the progress in optoelectronic functional organic crystals and some correlative principle.

  10. Progress on the optoelectronic functional organic crystals

    Institute of Scientific and Technical Information of China (English)

    WANG Huan; XIE ZengQi; Ma YuGuang; Shen JiaCong

    2007-01-01

    Organic crystals constructed by pi-conjugated molecules have been paid great attention to in the field of organic optoelectronic materials. The superiorities of these organic crystal materials, such as high thermal stability, highly ordered structure, and high carrier mobility over the amorphous thin film materials, make them attractive candidates for optoelectronic devices. Single crystal with definite structure provides a model to investigate the basic interactions between the molecules (supramolecular interaction), and the relationship between molecular stacking modes and optoelectronic performance (luminescence and carrier mobility). Through modulating molecular arrangement in organic crystal, the luminescence efficiency of organic crystal has exceeded 80% and carrier mobility has been up to the level of 10 cm2·V-1·s-1. Amplified stimulated emission phenomena have been observed in many crystals. In this paper, we will emphatically introduce the progress in optoelectronic functional organic crystals and some correlative principle.

  11. Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Narasimhan, Vijay K.; Hymel, Thomas M.; Lai, Ruby A.; Cui, Yi

    2017-01-03

    An optoelectronic device has a hybrid metal-dielectric optoelectronic interface including an array of nanoscale dielectric resonant elements (e.g., nanopillars), and a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film. The device may also include an anti-reflection coating. The device may further include a metal film layer on each of the dielectric resonant elements.

  12. Optoelectronics of Molecules and Polymers

    CERN Document Server

    Moliton, André

    2006-01-01

    Optoelectronic devices are being developed at an extraordinary rate. Organic light emitting diodes, photovoltaic devices and electro-optical modulators are pivotal to the future of displays, photosensors and solar cells, and communication technologies. This book details the theories underlying the relevant mechanisms in organic materials and covers, at a basic level, how the organic components are made. The first part of this book introduces the fundamental theories used to detail ordered solids and localised energy levels. The methods used to determine energy levels in perfectly ordered molecular and macromolecular systems are discussed, making sure that the effects of quasi-particles are not missed. The function of excitons and their transfer between two molecules are studied, and the problems associated with interfaces and charge injection into resistive media are presented. The second part details technological aspects such as the fabrication of devices based on organic materials by dry etching. The princ...

  13. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: A1-Based III-V Native Oxides

    Science.gov (United States)

    1992-05-01

    lateral direction. guide layer. The effect of the optical waveguide is shown by the The laser fabrication begins with the deposition on the near-field...to manipulate photons around a "chip," e.g., The laser fabrication begins with the patterning of for optoelectronic integrated circuits (OEICs), a

  14. Using optoelectronic sensors in the system PROTEUS

    Science.gov (United States)

    Zyczkowski, M.; Szustakowski, M.; Ciurapinski, W.; Piszczek, M.

    2010-10-01

    The paper presents the concept of optoelectronic devices for human protection in rescue activity. The system consists of an ground robots with predicted sensor. The multisensor construction of the system ensures significant improvement of security of using on-situ like chemical or explosive sensors. The article show a various scenario of use for individual sensor in system PROTEUS.

  15. Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range

    Science.gov (United States)

    2009-04-24

    Richmond VA 23284 USA. (e-mail: hmorkoc@vcu.edu). Donald Silversmith is with the Air Force Office of Scientific Research, Arlington, VA 22203 USA (e...for light-emitting optoelectronic devices for the blue/ultraviolet spectral range. Vitaliy Avrutin, Donald Silversmith , Fellow, IEEE, and Hadis Morkoç

  16. Study on Test Method for Low Frequency Noise of Optoelectronic Coupled Device in DC/DC Converter%DC/DC电源用光电耦合器低频噪声测试方法研究

    Institute of Scientific and Technical Information of China (English)

    包军林; 孙明; 庄奕琪; 于鹏; 任泽亮

    2012-01-01

    Optoelectronic coupled device (OCD) is a key element of DC/DC converter. The random increase of low frequency noise (LFN) is one of the main failure modes of DC/DC converter. Effective test method and standard for LFN of photoelectric coupler are absent in China. In this paper, characteristics of low frequency noise in OCD and its generation mechanism were investigated in detail. Bias circuit, equipment and method for LFN measurement were proposed. Experimental results from OCD 4N47 in DC/DC converter demonstrated that the proposed method could be used for accurate measurement of low frequency noise of OCDs, providing an effective approach to evaluating typical faults and system suitability of optoelectronic coupler for DC/DC converter.%光电耦合器是DC/DC电源的关键器件,光电耦合器低频噪声的随机增大是该类电源主要失效模式之一.目前,国内尚未形成光电耦合器低频噪声的有效测试方法,更未建立相关标准.文章详细分析了光电耦合器低频噪声特性及产生机理,提出了其低频噪声测试的偏置电路、测试设备和测试方法.针对用于DC/DC电源的典型光电耦合器(4N47)的实测结果表明,该方法能够准确测试光电耦合器的低频噪声,为DC/DC电源用光电耦合器的系统适用性和典型故障提供了一种有效的评估方法.

  17. Steps towards silicon optoelectronics

    CERN Document Server

    Starovoytov, A

    1999-01-01

    nanostructure fabrication. Thus, this thesis makes a dual contribution to the chosen field: it summarises the present knowledge on the possibility of utilising optical properties of nanocrystalline silicon in silicon-based electronics, and it reports new results within the framework of the subject. The main conclusion is that due to its promising optoelectronic properties nanocrystalline silicon remains a prospective competitor for the cheapest and fastest microelectronics of the next century. This thesis addresses the issue of a potential future microelectronics technology, namely the possibility of utilising the optical properties of nanocrystalline silicon for optoelectronic circuits. The subject is subdivided into three chapters. Chapter 1 is an introduction. It formulates the oncoming problem for microelectronic development, explains the basics of Integrated Optoelectronics, introduces porous silicon as a new light-emitting material and gives a brief review of other competing light-emitting material syst...

  18. Glass-Forming Organic Semiconductors for Optoelectronics

    Directory of Open Access Journals (Sweden)

    Aušra TOMKEVIČIENĖ

    2011-11-01

    Full Text Available Organic electronics and optoelectronics are newly emerging fields of science and technology that cover chemistry, physics, and materials science. Electronic and optoelectronic devices using organic materials are attractive because of the materials characteristics, potentially low cost, and capability of large-area, flexible device fabrication. Such devices as OLEDs, OPVs, and OFETs involve charge transport as a main process in their operation processes, and therefore, require high-performance charge-transporting materials. This review article focuses on charge-transporting materials for use in OLEDs, OPVs, and OFETs. We have tried to arrange the charge-transporting materials in order by classifying them on the basis of their molecular structures. Molecular design concepts for charge-transporting materials and their charge-transport properties are discussed.http://dx.doi.org/10.5755/j01.ms.17.4.767

  19. Organic photosensitive devices

    Science.gov (United States)

    Rand, Barry P; Forrest, Stephen R

    2013-11-26

    The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

  20. Organic photosensitive devices

    Energy Technology Data Exchange (ETDEWEB)

    Rand, Barry P; Forrest, Stephen R

    2013-11-26

    The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

  1. Slot-Die-Coated V2O5 as Hole Transport Layer for Flexible Organic Solar Cells and Optoelectronic Devices

    DEFF Research Database (Denmark)

    Beliatis, Michail; Helgesen, Martin; Garcia Valverde, Rafael

    2016-01-01

    Vanadium pentoxide has been proposed as a good alternative hole transport layer for improving device lifetime of organic photovoltaics. The article presents a study on the optimization of slot-die-coated vanadium oxide films produced with a roll coating machine with the aim of achieving scalable ...

  2. Organic ferroelectric opto-electronic memories

    Directory of Open Access Journals (Sweden)

    Kamal Asadi

    2011-12-01

    Full Text Available Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this area with a focus on the most promising opto-electronic device concept, i.e., bistable rectifying diodes. The integration of these diodes into larger memory arrays is discussed. Through a clever design of the electrodes we demonstrate light emitting diodes with integrated built-in switches that can be applied in signage applications.

  3. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica

    2017-03-30

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  4. Integral optoelectronic switch based on DMOS-transistors

    Directory of Open Access Journals (Sweden)

    Politanskyy L. F.

    2008-12-01

    Full Text Available The characteristics of optoelectronic couples photodiodes-DMOS-transistor are studied in the paper. There was developed a mathematical model of volt-ampere characteristic of the given optoelectronic couple which allows to determine interrelation of its electric parameters with constructive and electrophysical parameters of photodiodes and DMOS-transistors. There was suggested a construction of integral optoelectronic switch, based on DMOS-transistors on the silicon with dielectric insulation structures (SDIS. Possible is the optic control of executive devices, connected both to the source and drain circuits of the switching transistor.

  5. Terahertz optoelectronics with surface plasmon polariton diode.

    Science.gov (United States)

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  6. 用于光电子器件的低成本、高反射率SOR衬底%Low-Cost, High-Reflectivity Silicon-on-Reflector for Optoelectronic Device Application

    Institute of Scientific and Technical Information of China (English)

    李成; 杨沁青; 王红杰; 王启明

    2001-01-01

    A silicon-on-reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si-based sol-gel sticking and smart-cut techniques. The reflectivity of the SOR substrate is close to unity at 1.3μm's wavelength under the normal incidence.%报道了一种包含一薄层单晶硅和隐埋Si/SiO2布拉格反射器的SOR衬底.这种可用于光电子器件的衬底是由硅基乳胶粘接和智能剥离技术研制而成的.在垂直光照条件下,这种SOR衬底在1.3μm处的反射率接近100%。

  7. Polymer optoelectronic structures for retinal prosthesis.

    Science.gov (United States)

    Gautam, Vini; Narayan, K S

    2014-01-01

    This commentary highlights the effectiveness of optoelectronic properties of polymer semiconductors based on recent results emerging from our laboratory, where these materials are explored as artificial receptors for interfacing with the visual systems. Organic semiconductors based polymer layers in contact with physiological media exhibit interesting photophysical features, which mimic certain natural photoreceptors, including those in the retina. The availability of such optoelectronic materials opens up a gateway to utilize these structures as neuronal interfaces for stimulating retinal ganglion cells. In a recently reported work entitled "A polymer optoelectronic interface provides visual cues to a blind retina," we utilized a specific configuration of a polymer semiconductor device structure to elicit neuronal activity in a blind retina upon photoexcitation. The elicited neuronal signals were found to have several features that followed the optoelectronic response of the polymer film. More importantly, the polymer-induced retinal response resembled the natural response of the retina to photoexcitation. These observations open up a promising material alternative for artificial retina applications.

  8. Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

    Science.gov (United States)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-05-01

    A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.

  9. Radially oriented mesoporous TiO2 microspheres with single-crystal-like anatase walls for high-efficiency optoelectronic devices.

    Science.gov (United States)

    Liu, Yong; Che, Renchao; Chen, Gang; Fan, Jianwei; Sun, Zhenkun; Wu, Zhangxiong; Wang, Minghong; Li, Bin; Wei, Jing; Wei, Yong; Wang, Geng; Guan, Guozhen; Elzatahry, Ahmed A; Bagabas, Abdulaziz A; Al-Enizi, Abdullah M; Deng, Yonghui; Peng, Huisheng; Zhao, Dongyuan

    2015-05-01

    Highly crystalline mesoporous materials with oriented configurations are in demand for high-performance energy conversion devices. We report a simple evaporation-driven oriented assembly method to synthesize three-dimensional open mesoporous TiO2 microspheres with a diameter of ~800 nm, well-controlled radially oriented hexagonal mesochannels, and crystalline anatase walls. The mesoporous TiO2 spheres have a large accessible surface area (112 m(2)/g), a large pore volume (0.164 cm(3)/g), and highly single-crystal-like anatase walls with dominant (101) exposed facets, making them ideal for conducting mesoscopic photoanode films. Dye-sensitized solar cells (DSSCs) based on the mesoporous TiO2 microspheres and commercial dye N719 have a photoelectric conversion efficiency of up to 12.1%. This evaporation-driven approach can create opportunities for tailoring the orientation of inorganic building blocks in the assembly of various mesoporous materials.

  10. Graphene optoelectronics synthesis, characterization, properties, and applications

    CERN Document Server

    bin M Yusoff, Abdul Rashid

    2014-01-01

    This first book on emerging applications for this innovative material gives an up-to-date account of the many opportunities graphene offers high-end optoelectronics.The text focuses on potential as well as already realized applications, discussing metallic and passive components, such as transparent conductors and smart windows, as well as high-frequency devices, spintronics, photonics, and terahertz devices. Also included are sections on the fundamental properties, synthesis, and characterization of graphene. With its unique coverage, this book will be welcomed by materials scientists, solid-

  11. In-situ nanochemistry for optoelectronics

    Science.gov (United States)

    Kim, Won Jin

    This thesis describes recent results on simple methods to arrange nanosize objects such as semiconductor nanocrystals, noble metal nanoparticles, and upconversion nanophosphors by means of top-down processes. Specific focus is directed towards approaches to produce predefined patterns of various nanostructure materials using optical lithography for direct writing of films for optoelectronic and electronic devices. To obtain photo-patternability, the nanostructure materials [for example semiconductor nanocrystals (CdSe, CdTe, PbSe), metallic nanoparticles (Ag), upconversion nanophosphors (Er3+/Yb 3+ or Tm3+/Yb3+ co-doped NaYF4 ), and transparent conducting oxide nanoparticles (ITO, ZnO)] were functionalized by incorporation of the functional ligand t-butoxycarbonyl (t-BOC) which has an acid-labile moiety. The t-BOC group undergoes a cleavage, when subjected to UV irradiation in the presence of a photo acid generator (PAG) to releases isobutene and carbon dioxide. Depending on the need of the application, either the exposed regions (negative pattern) or the non-exposed regions (positive pattern) could be developed from the exposed films by appropriate solvent selection. The photo exposed regions of the film are rendered hydrophilic due to the degradation of the t-BOC, the un-exposed regions remain hydrophobic. This solubility change in the QDs is the basis of their patternablity. The un-exposed regions can be removed to obtain the negative pattern by washing with hydrophobic solvents, whereas the exposed regions can be selectively removed to obtain positive pattern by washing with hydrophilic solvents. This change in the surface chemistry results in the ability to photo-pattern the various nanostructure materials where desired for a number of optoelectronic device geometries. We demonstrate that the ultimate resolution (linewidth and spacing) of this technique is below submicron. Details on technological aspects concerning nanoparticle patterning as well as practical

  12. Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

    Science.gov (United States)

    Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

    2016-12-01

    We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

  13. Inverted organic photosensitive devices

    Energy Technology Data Exchange (ETDEWEB)

    Forrest, Stephen R.; Bailey-Salzman, Rhonda F.

    2016-12-06

    The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.

  14. Selectively Transparent and Conducting Photonic Crystals and their Potential to Enhance the Performance of Thin-Film Silicon-Based Photovoltaics and Other Optoelectronic Devices

    Science.gov (United States)

    O'Brien, Paul G.

    2011-12-01

    The byproducts of human engineered energy production are increasing atmospheric CO2 concentrations well above their natural levels and accompanied continual decline in the natural reserves of fossil fuels necessitates the development of green energy alternatives. Solar energy is attractive because it is abundant, can be produced in remote locations and consumed on site. Specifically, thin-film silicon-based photovoltaic (PV) solar cells have numerous inherent advantages including their availability, non-toxicity, and they are relatively inexpensive. However, their low-cost and electrical performance depends on reducing their thickness to as great an extent as possible. This is problematic because their thickness is much less than their absorption length. Consequently, enhanced light trapping schemes must be incorporated into these devices. Herein, a transparent and conducting photonic crystal (PC) intermediate reflector (IR), integrated into the rear side of the cell and serving the dual function as a back-reflector and a spectral splitter, is identified as a promising method of boosting the performance of thin-film silicon-based PV. To this end a novel class of PCs, namely selectively transparent and conducting photonic crystals (STCPC), is invented. These STCPCs are a significant advance over existing 1D PCs because they combine intense wavelength selective broadband reflectance with the transmissive and conductive properties of sputtered ITO. For example, STCPCs are made to exhibit Bragg-reflectance peaks in the visible spectrum of 95% reflectivity and have a full width at half maximum that is greater than 200nm. At the same time, the average transmittance of these STCPCs is greater than 80% over the visible spectrum that is outside their stop-gap. Using wave-optics analysis, it is shown that STCPC intermediate reflectors increase the current generated in micromorph cells by 18%. In comparison, the more conventional IR comprised of a single homogeneous

  15. Highly Conductive Transparent Organic Electrodes with Multilayer Structures for Rigid and Flexible Optoelectronics

    OpenAIRE

    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

    2015-01-01

    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will b...

  16. Intriguing Optoelectronic Properties of Metal Halide Perovskites.

    Science.gov (United States)

    Manser, Joseph S; Christians, Jeffrey A; Kamat, Prashant V

    2016-11-09

    A new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewed with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH3NH3PbI3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2-dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.

  17. Integrated terahertz optoelectronics

    Science.gov (United States)

    Liang, Guozhen; Wang, Qi Jie

    2016-11-01

    Currently, terahertz (THz) optical systems are based on bulky free-space optics. This is due to the lack of a common platform onto which different THz components, e.g., source, waveguide, modulator and detector, can be monolithically integrated. With the development of THz quantum cascade laser (QCL), it has been realized that the QCL chip may be such a platform for integrated THz photonics. Here, we report our recent works where the THz QCL is integrated with passive or optoelectronic components. They are: 1) integrated graphene modulator with THz QCL achieving 100% modulation depth and fast speed; 2) phase-locked THz QCL with integrated plasmonic waveguide and subwavelength antennas realizing dynamically widely tunable polarizations.

  18. Phonon Enhancement of Electronic and Optoelectronic Devices

    Science.gov (United States)

    2006-12-01

    collaboration with Agere Systems we fabricated optimized npn Si/Si0 7Geo.3/Si MT-HBTs. The best room-temperature transistor characteristics are shown in... transistors . Additionally, new physical phenomena is being studied in which electron-electron interaction, crucial for ballistic and coherent electronic...ultrahigh speed bipolar tunneling transistors . Additionally, new physical phenomena was studied in which electron-electron interaction, crucial for ballistic

  19. Optoelectronic Devices Based on Novel Semiconductor Structures

    Science.gov (United States)

    2006-06-14

    generation are the Nd:YAG beam at 1.0642 ptm and the idler beam from a master oscillator/power oscillator ( MOPO ) pumped by a frequency-tripled Nd:YAG...matched DFG (see Fig. a 72 1). In order to achieve phase-matching, the 1.0642-ptm pump beam and idler beam from the MOPO system are ordinary and...frequency for the MOPO beam (idler), which is given by Avi (1) 4L [no) , (o) ] where n,(,o°) and n(0°) are the indices of refraction for the ordinary

  20. Radiation Hard High Performance Optoelectronic Devices Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High-performance, radiation-hard, widely-tunable integrated laser/modulator chip and large-area avalanche photodetectors (APDs) are key components of optical...

  1. Optoelectronic microdevices for combined phototherapy

    Science.gov (United States)

    Zharov, Vladimir P.; Menyaev, Yulian A.; Hamaev, V. A.; Antropov, G. M.; Waner, Milton

    2000-03-01

    In photomedicine in some of cases radiation delivery to local zones through optical fibers can be changed for the direct placing of tiny optical sources like semiconductor microlasers or light diodes in required zones of ears, nostrils, larynx, nasopharynx cochlea or alimentary tract. Our study accentuates the creation of optoelectronic microdevices for local phototherapy and functional imaging by using reflected light. Phototherapeutic micromodule consist of the light source, microprocessor and miniature optics with different kind of power supply: from autonomous with built-in batteries to remote supply by using pulsed magnetic field and supersmall coils. The developed prototype photomodule has size (phi) 8X16 mm and work duration with built-in battery and light diode up several hours at the average power from several tenths of mW to few mW. Preliminary clinical tests developed physiotherapeutic micrimodules in stomatology for treating the inflammation and in otolaryngology for treating tonsillitis and otitis are presented. The developed implanted electro- optical sources with typical size (phi) 4X0,8 mm and with remote supply were used for optical stimulation of photosensitive retina structure and electrostimulation of visual nerve. In this scheme the superminiature coil with 30 electrical integrated levels was used. Such devices were implanted in eyes of 175 patients with different vision problems during clinical trials in Institute of Eye's Surgery in Moscow. For functional imaging of skin layered structure LED arrays coupled photodiodes arrays were developed. The possibilities of this device for study drug diffusion and visualization small veins are discussed.

  2. System of Optoelectronic Sensors for Breath Analysis

    Directory of Open Access Journals (Sweden)

    Mikołajczyk Janusz

    2016-09-01

    Full Text Available The paper describes an integrated laser absorption system as a potential tool for breath analysis for clinical diagnostics, online therapy monitoring and metabolic disorder control. The sensors operate basing on cavity enhanced spectroscopy and multi-pass spectroscopy supported by wavelength modulation spectroscopy. The aspects concerning selection of operational spectral range and minimization of interference are also discussed. Tests results of the constructed devices collected with reference samples of biomarkers are also presented. The obtained data provide an opportunity to analyse applicability of optoelectronic sensors in medical screening.

  3. Coherent optoelectronics with single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zrenner, A; Ester, P; Michaelis de Vasconcellos, S; Huebner, M C; Lackmann, L; Stufler, S [Universitaet Paderborn, Department Physik, Warburger Strasse 100, D-33098 Paderborn (Germany); Bichler, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)], E-mail: zrenner@mail.upb.de

    2008-11-12

    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  4. Coherent optoelectronics with single quantum dots

    Science.gov (United States)

    Zrenner, A.; Ester, P.; Michaelis de Vasconcellos, S.; Hübner, M. C.; Lackmann, L.; Stufler, S.; Bichler, M.

    2008-11-01

    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  5. Optoelectronic properties of natural cyanin dyes.

    Science.gov (United States)

    Calzolari, A; Varsano, D; Ruini, A; Catellani, A; Tel-Vered, R; Yildiz, H B; Ovits, O; Willner, I

    2009-07-30

    An integrated theoretical/experimental study of the natural cyanin dye is presented in terms of its structural and optoelectronic properties for different gas-phase and prototypical device configurations. Our microscopic analysis reveals the impact of hydration and hydroxylation reactions, as well as of the attached sugar, on ground and optically excited states, and it illustrates the visible-light harvesting capability of the dye. Our optical experiments at different and controlled pH concentrations allow for a direct comparison with theoretical results. We analyze the many different contributions to photocurrent of the various portions of a prototypical device and, as a proof of principle, we propose the addition of specific ligands to control the increase of the photocurrent yield in the cyanin-based electrochemical device.

  6. New Results with the Opto-Electronic Oscillators (OEO)

    Science.gov (United States)

    Yao, S.; Maleki, L.

    1996-01-01

    A new class of oscillators based on photonic devices is presented. These opto-electronic oscillators (OEOs) generate microwave oscillation by converting continuous energy from a light source using a feedback circuit which includes a delay element, an electro-optic switch, and a photodetctor.

  7. Ultrafast Graphene Photonics and Optoelectronics

    Science.gov (United States)

    2017-04-14

    structures that consist of a sheet of graphene and a plasma substrate such as a metal, a doped semiconductor, or another graphene layer. Using these...AFRL-AFOSR-JP-TR-2017-0032 Ultrafast Graphene Photonics and Optoelectronics Kuang-Hsiung Wu National Chiao Tung University Final Report 04/14/2017...DATES COVERED (From - To) 18 Apr 2013 to 17 Apr 2016 4. TITLE AND SUBTITLE Ultrafast Graphene Photonics and Optoelectronics 5a.  CONTRACT NUMBER 5b

  8. Reconfigurable Integrated Optoelectronics

    Directory of Open Access Journals (Sweden)

    Richard Soref

    2011-01-01

    Full Text Available Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs and photonic integrated circuits (PICs manufactured in a high-volume foundry. We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics. This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the electro-optical building blocks. We illustrate these modules in detail and discuss 3D ROEIC chips for the highest-performance signal processing. We present examples of our module theory for RPIC optical lattice filters already constructed, and we propose new ROEICs for directed optical logic, large-scale matrix switching, and 2D beamsteering of a phased-array microwave antenna. In general, large-scale-integrated ROEICs will enable significant applications in computing, quantum computing, communications, learning, imaging, telepresence, sensing, RF/microwave photonics, information storage, cryptography, and data mining.

  9. High bandgap III-V alloys for high efficiency optoelectronics

    Science.gov (United States)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  10. A class of fascinating optoelectronic materials: Triarylboron compounds

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Triarylboron compounds are significant optoelectronic materials due to their excellent emissive and electron-transport properties,and could be applied in organic light-emitting diodes as emissive and/or electron-transport layers.Triarylboron compounds have vacant pπ orbital and have received increasing interest as fluoride ion and cyanide ion sensors utilizing specific Lewis acid-base interaction.This review summarizes their structural characteristics,optical properties and applications in chemosensors for anions and optoelectronic devices developed in recent years and discusses the problems and prospects.

  11. High bandgap III-V alloys for high efficiency optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  12. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

    Science.gov (United States)

    Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A

    2016-09-14

    We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

  13. Implantable optoelectronic probes for in vivo optogenetics

    Science.gov (United States)

    Iseri, Ege; Kuzum, Duygu

    2017-06-01

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  14. Optoelectronic date acquisition system based on FPGA

    Science.gov (United States)

    Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing

    2015-11-01

    An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

  15. Electrodes for Microfluidic Integrated Optoelectronic Tweezers

    Directory of Open Access Journals (Sweden)

    Kuo-Wei Huang

    2011-01-01

    Full Text Available We report on two types of electrodes that enable the integration of optoelectronic tweezers (OETs with multilayer poly(dimethylsilane- (PDMS- based microfluidic devices. Both types of electrodes, Au-mesh and single-walled carbon nanotube- (SWNT- embedded PDMS thin film, are optically transparent, electrically conductive, and can be mechanically deformed and provide interfaces to form strong covalent bonding between an OET device and PDMS through standard oxygen plasma treatment. Au-mesh electrodes provide high electrical conductivity and high transparency but are lack of flexibility and allow only small deformation. On the other hand, SWNT-embedded PDMS thin film electrodes provide not only electrical conductivity but also optical transparency and can undergo large mechanical deformation repeatedly without failure. This enables, for the first time, microfluidic integrated OET with on-chip valve and pump functions, which is a critical step for OET-based platforms to conduct more complex and multistep biological and biochemical analyses.

  16. Battlefield Lasers and Opto-electronics Systems (Review Paper

    Directory of Open Access Journals (Sweden)

    A. K. Maini

    2010-03-01

    Full Text Available During the last four decades or so, there has been an explosive growth in commercial, industrial, medical, scientific, technological, and above all, military usage of laser devices and systems. In fact, lasers have influenced every conceivable area of application during this period. While the expansion of non-military application spectrum of lasers is primarily driven by emergence of a large number of laser wavelengths followed by ever increasing power levels and reducing price tags at which those wavelengths could be generated, the military applications of lasers and related electro-optic devices have grown mainly because of technological maturity of the lasers that were born in the late 1960's and the early 1970's. Lasers have been used in various military applications since the early days of development that followed the invention of this magical device. There has been large scale proliferation of lasers and opto-electronic devices and systems for applications like range finding, target designation, target acquisition and tracking, precision guided munitions, etc. during 1970's and 1980's. These devices continue to improve in performance and find increased acceptance and usage in the contemporary battlefield scenario. Technological advances in optics, opto-electronics, and electronics, leading to more rugged, reliable, compact and efficient laser devices are largely responsible for making these indispensable in modern warfare. Past one decade or so has seen emergence of some new potential areas of usage. Some of these areas include rapid growth in the usage of lasers and opto-electronics devices and systems for electrooptic countermeasure (EOCM applications, test and evaluation systems that can perform online functionality checks on military opto-electronics systems and also their interoperability. In this paper, an overview of the current and emerging military applications of lasers and opto-electronics systems has been given with an outline

  17. LED光电显示器件用双组分有机硅灌封胶的研制%R & D on Two-Component Silicone Potting for LED Optoelectronics Display Device

    Institute of Scientific and Technical Information of China (English)

    熊婷; 袁素兰; 王有治; 李步春; 雷震; 赵林

    2011-01-01

    以α,ω-二羟基聚二甲基硅氧烷为基胶,配合处理的白炭黑、电子级硅微粉、硫化剂和偶联剂等,制得用于LED显示器件用的双组分有机硅灌封胶;研究了α,ω-二羟基聚二甲基硅氧烷的黏度、硅油用量以及A、B组分混合比例对灌封胶性能的影响;探讨了B组分中有机锡含量对灌封胶适用期和表干时间的影响.结果表明:随着α,ω-二羟基聚二甲基硅氧烷黏度的增加,灌封胶的拉伸强度和断裂伸长率增加,硬度降低;随着硅油用量的增加,灌封胶伸长率提高,强度下降,膨胀系数变大;随着A、B组分质量比的增加,灌封胶的剪切强度有所增加,同时线收缩率也变大;随着有机锡含量的增加,灌封胶适用期缩短、表干时间变快,当有机锡含量增加到0.15%~0.45%时,灌封胶适用期和表干时间趋于稳定.%The two-component silicone potting material designed for potting on LED optoelectronics display device, was prepared on the basis of α,ω - dihydroxy polydimethylsiloxane and other processed materials such as silica, filler, cross-linker, silane coupling agent, etc. The influence of viscosity and dosage of α,ω-dihydroxy polydimethylsiloxane, and the ratio of A/B to the potting's performance, and the influence of organotin content to potting's working life and tack-free time were discussed. The results showed that the tensile 8trength and elongation of the potting increased as the viscosity of α,ω - dihydroxy polydimethylsiloxane increased, but the hardness decreased. The elongation and coefficient of expansion mcreased as α,ω - dihydroxy polydimethylsiloxane increased, but the tensile strength decreased. Also the shear strength and linear shrinkage of potting increased as the ration of A/B increased. Potting's working life shortened and tack-free time sped up as di-butyltin dilaurate ( DBTD) in B increased. Considering the short construction and operation period, the be8t dosage of DBTD in B is 0

  18. Graphene-Like Molybdenum Disulfide and Its Application in Optoelectronic Devices%类石墨烯二硫化钼及其在光电子器件上的应用

    Institute of Scientific and Technical Information of China (English)

    汤鹏; 肖坚坚; 郑超; 王石; 陈润锋

    2013-01-01

    optoelectronic devices such as secondary batteries, field-effect transistors, sensors, organic light-emitting diodes, and memory. The application principles and research progress are discussed, fol owed by a summary and outlook for the research of this emerging 2D layered nanomaterial.

  19. Optoelectronics circuits manual

    CERN Document Server

    Marston, R M

    1999-01-01

    This manual is a useful single-volume guide specifically aimed at the practical design engineer, technician, and experimenter, as well as the electronics student and amateur. It deals with the subject in an easy to read, down to earth, and non-mathematical yet comprehensive manner, explaining the basic principles and characteristics of the best known devices, and presenting the reader with many practical applications and over 200 circuits. Most of the ICs and other devices used are inexpensive and readily available types, with universally recognised type numbers.The second edition

  20. D-π-A conjugated molecules for optoelectronic applications.

    Science.gov (United States)

    Kim, Tae-Dong; Lee, Kwang-Sup

    2015-06-01

    Dipolar chromophores consisting of electron donor (D) and electron acceptor (A) groups connected through a conjugated π-bridge have been actively studied and integrated in optoelectronic and electronic devices. Generally, such π-conjugated molecules provide substantial delocalization of π-electrons over the molecules. Here, a brief overview of recent research on D-π-A dipolar chromophores including their syntheses and several promising applications is reported, especially in nonlinear optical devices and organic photovoltaics. Structure/property relationships are discussed in order to exploit the potentials by tuning the π-electron density, polarizability, and HOMO-LUMO band gap of the chromophores. Some of the examples may well set the stage for chip-scale integration of optoelectronics as well as the realization of an important array of new device technologies. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. An introduction to optoelectronic sensors

    CERN Document Server

    Tajani, Antonella; Cutolo, Antonello

    2009-01-01

    This invaluable book offers a comprehensive overview of the technologies and applications of optoelectronic sensors. Based on the R&D experience of more than 70 engineers and scientists, highly representative of the Italian academic and industrial community in this area, this book provides a broad and accurate description of the state-of-the-art optoelectronic technologies for sensing. The most innovative approaches, such as the use of photonic crystals, squeezed states of light and microresonators for sensing, are considered. Application areas range from environment to medicine and healthcare

  2. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    Science.gov (United States)

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.

  3. Colloidal quantum dots as optoelectronic elements

    Science.gov (United States)

    Vasudev, Milana; Yamanaka, Takayuki; Sun, Ke; Li, Yang; Yang, Jianyong; Ramadurai, Dinakar; Stroscio, Michael A.; Dutta, Mitra

    2007-02-01

    Novel optoelectronic systems based on ensembles of semiconductor nanocrystals are addressed in this paper. Colloidal semiconductor quantum dots and related quantum-wire structures have been characterized optically; these optical measurements include those made on self-assembled monolayers of DNA molecules terminated on one end with a common substrate and on the other end with TiO II quantum dots. The electronic properties of these structures are modeled and compared with experiment. The characterization and application of ensembles of colloidal quantum dots with molecular interconnects are considered. The chemically-directed assembly of ensembles of colloidal quantum dots with biomolecular interconnects is demonstrated with quantum dot densities in excess of 10 +17 cm -3. A number of novel photodetectors have been designed based on the combined use of double-barrier quantum-well injectors, colloidal quantum dots, and conductive polymers. Optoelectronic devices including photodetectors and solar cells based on threedimensional ensembles of quantum dots are considered along with underlying phenomena such as miniband formation and the robustness of minibands to displacements of quantum dots in the ensemble.

  4. Reconfigurable Optical Interconnections Using Dynamic Optoelectronic Holograms

    Science.gov (United States)

    Schulze, Elmar

    1988-04-01

    Increasing complexity and processing speed of electronic circuits and a high device density have led to serious problems in electrical interconnections. Their limitations arise from their signal transmission capacity. power consumption. crosstalk. and reliability. Optical links may solve such problems by offering high data rates of several gigabits per second. large fanouts of up to 100 loads. good reliability and less power expenditure. Optical fibers, integrated optical waveguides or free-space transmission links may be applicable. For the free-space links, lenses. mirrors and holograms can be used to guide the light waves. In this paper, reconfigurable optical interconnection schemes are proposed and described which are based on optoelectronic holograms. Their interference patterns can be changed dynamically. To establish connections as free-space links, the light beams emitted from even hundreds of light sources are imaged onto an array of small dynamic holograms. Their interference patterns are optically and electronically controllable. These holograms diffract and focus each of the incident light beams individually onto the receiving photo-diodes. By changing the hologram interference patterns dynamically. an optical switch is obtained. It renders the establishment of reconfigurable optical interconnections. As optoelectronic holograms very-high-resolution spatial light modulators are proposed.

  5. Simple Optoelectronic Feedback in Microwave Oscillators

    Science.gov (United States)

    Maleki, Lute; Iltchenko, Vladimir

    2009-01-01

    A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

  6. An optoelectronic fuel level sensor

    Science.gov (United States)

    Murashkina, T. I.; Badeeva, E. A.; Badeev, A. V.; Savochkina, M. M.

    2017-01-01

    The block and schematic construction diagrams of a new optoelectronic fuel level sensor are considered. The operating principle of the sensor is based on registering the intensity value of the optical path reflected from the mirror, located on the reservoir bottom.

  7. 2D semiconductor optoelectronics

    Science.gov (United States)

    Novoselov, Kostya

    The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors, photovoltaic devices, etc. By taking the complexity and functionality of such van der Waals heterostructures to the next level we introduce quantum wells engineered with one atomic plane precision. Light emission from such quantum wells, quantum dots and polaritonic effects will be discussed.

  8. Optoelectronics Research Center

    Science.gov (United States)

    2012-01-03

    makes the LT-GaAs on di- amond layer an ideal wafer -bonding interface for high-power semiconductor devices. The sam- ples were grown at 0.2 µm/hr with...µm) Second ResonanceBelow Resonance d e gf First Resonance Above Resonance Read-out integrated circuitIndium bump Mesa FPA SP-FPA 2.1 -2.1 b da p d c...and MPC regions and the bump bonding to the ROIC; c) simulation of the enhanced SPW fields; d) enlarged views of the MPC includ- ing a SEM of the

  9. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices

    Science.gov (United States)

    Ghazai, Alaa Jabbar; Hassan, Haslan Abu; Hassan, Zanuri Bint

    2016-07-01

    The objective of the current study is to characterize the optoelectronic properties of quaternary n-Al0.08In0.08Ga0.84N thin films grown via molecular beam epitaxy (MBE) on sapphire (Al2O3) and silicon (Si) substrates for different optoelectronic applications. Due to mismatch problems between the epilayer and substrates, the AlN buffer layer was inserted at low temperature to reduce the lattice mismatch to approximately 4% for the samples, to produce high-quality epitaxy films. Defect-free films with high structural, optical and electrical qualities were obtained. Their small full width at half maximum, low compressive strain, relatively large grain size and low dislocation density which produced smooth surfaces without any separation phases or cracks were characterized using X-ray diffraction analysis. Scanning electron microscopy, energy-dispersive X-ray microscopy and atomic force microscopy images confirmed these characterizations. Furthermore, high optical quality, as well as high absorption and absorption coefficients were observed using photoluminescence and UV-VIS spectroscopy; however, a red shift was observed in the PL peak of the near band edge of 3.158 eV of the sample on Si substrate compared with 3.37 eV for the sample on sapphire substrate which is attributed to the compressive strain and occurrence of the quantum confined Stark effect.

  10. Electroactive and Optoelectronically Active Graphene Nanofilms

    DEFF Research Database (Denmark)

    Chi, Qijin

    As an atomic-scale-thick two-dimensional material, graphene has emerged as one of the most miracle materials and has generated intensive interest in physics, chemistry and even biology in the last decade [1, 2]. Nanoscale engineering and functionalization of graphene is a crucial step for many...... applications ranging from catalysis, electronic devices, sensors to advanced energy conversion and storage [3]. This talk highlights our recent studies on electroactive and optoelectronically active graphene ultrathin films for chemical sensors and energy technology. The presentation includes a general theme...... for functionalization of graphene nanosheets, followed by showing several case studies. Our systems cover redox-active nanoparticles, electroactive supramolecular ensembles and redox enzymes which are integrated with graphene nanosheets as building blocks for the construction of functional thin films or graphene papers....

  11. Photonics and optoelectronics of two-dimensional materials beyond graphene

    Science.gov (United States)

    Ponraj, Joice Sophia; Xu, Zai-Quan; Chander Dhanabalan, Sathish; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

    2016-11-01

    Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

  12. Telemedicine optoelectronic biomedical data processing system

    Science.gov (United States)

    Prosolovska, Vita V.

    2010-08-01

    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  13. One-dimensional CdS nanostructures: a promising candidate for optoelectronics.

    Science.gov (United States)

    Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou

    2013-06-11

    As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted.

  14. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

    Science.gov (United States)

    Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras; Coleman, Jonathan N; Strano, Michael S

    2012-11-01

    The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.

  15. The Cellulose Nanofibers for Optoelectronic Conversion and Energy Storage

    Directory of Open Access Journals (Sweden)

    Yongfeng Luo

    2014-01-01

    Full Text Available Cellulose widely exists in plant tissues. Due to the large pores between the cellulose units, the regular paper is nontransparent that cannot be used in the optoelectronic devices. But some chemical and physical methods such as 2,2,6,6-tetramethylpiperidine-1-oxyl radical (TEMPO oxidation can be used to improve the pores scale between the cellulose units to reach nanometer level. The cellulose nanofibers (CNFs have good mechanical strength, flexibility, thermostability, and low thermal expansion. The paper made of these nanofibers represent a kind of novel nanostructured material with ultrahigh transparency, ultrahigh haze, conductivity, biodegradable, reproducible, low pollution, environment friendly and so on. These advantages make the novel nanostructured paper apply in the optoelectronic device possible, such as electronics energy storage devices. This kind of paper is considered most likely to replace traditional materials like plastics and glass, which is attracting widespread attention, and the related research has also been reported. The purpose of this paper is to review CNFs which are applied in optoelectronic conversion and energy storage.

  16. Optoelectronic Oscillators for Communication Systems

    Science.gov (United States)

    Romeira, Bruno; Figueiredo, José

    We introduce and report recent developments on a novel five port optoelectronic voltage controlled oscillator consisting of a resonant tunneling diode (RTD) optical-waveguide integrated with a laser diode. The RTD-based optoelectronic oscillator (OEO) has both optical and electrical input and output ports, with the fifth port allowing voltage control. The RTD-OEO locks to reference radio-frequency (RF) sources by either optical or electrical injection locking techniques allowing remote synchronization, eliminating the need of impedance matching between traditional RF oscillators. RTD-OEO functions include generation, amplification and distribution of RF carriers, clock recovery, carrier recovery, modulation and demodulation and frequency synthesis. Self-injection locking operation modes, where small portions of the output electrical/optical signals are fed back into the electrical/optical input ports, are also proposed. The self-phase locked loop configuration can give rise to low-noise high-stable oscillations, not limited by the RF source performance and with no need of external optoelectronic conversion.

  17. Integrated NEMS and optoelectronics for sensor applications.

    Energy Technology Data Exchange (ETDEWEB)

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R. (Symphony Acoustics, Rio Rancho, NM); Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade (Symphony Acoustics, Rio Rancho, NM); Okandan, Murat; Peterson, Kenneth Allen

    2008-01-01

    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  18. Antenna-enhanced optoelectronic probing of carbon nanotubes.

    Science.gov (United States)

    Mauser, Nina; Hartmann, Nicolai; Hofmann, Matthias S; Janik, Julia; Högele, Alexander; Hartschuh, Achim

    2014-07-09

    We report on the first antenna-enhanced optoelectronic microscopy studies on nanoscale devices. By coupling the emission and excitation to a scanning optical antenna, we are able to locally enhance the electroluminescence and photocurrent along a carbon nanotube device. We show that the emission source of the electroluminescence can be pointlike with a spatial extension below 20 nm. Topographic and antenna-enhanced photocurrent measurements reveal that the emission takes place at the location of highest local electric field indicating that the mechanism behind the emission is the radiative decay of excitons created via impact excitation.

  19. Graphene and Two-Dimensional Materials for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Andreas Bablich

    2016-03-01

    Full Text Available This article reviews optoelectronic devices based on graphene and related two-dimensional (2D materials. The review includes basic considerations of process technology, including demonstrations of 2D heterostructure growth, and comments on the scalability and manufacturability of the growth methods. We then assess the potential of graphene-based transparent conducting electrodes. A major part of the review describes photodetectors based on lateral graphene p-n junctions and Schottky diodes. Finally, the progress in vertical devices made from 2D/3D heterojunctions, as well as all-2D heterostructures is discussed.

  20. Low -Dimensional Halide Perovskites and Their Advanced Optoelectronic Applications

    Science.gov (United States)

    Zhang, Jian; Yang, Xiaokun; Deng, Hui; Qiao, Keke; Farooq, Umar; Ishaq, Muhammad; Yi, Fei; Liu, Huan; Tang, Jiang; Song, Haisheng

    2017-07-01

    Metal halide perovskites are crystalline materials originally developed out of scientific curiosity. They have shown great potential as active materials in optoelectronic applications. In the last 6 years, their certified photovoltaic efficiencies have reached 22.1%. Compared to bulk halide perovskites, low-dimensional ones exhibited novel physical properties. The photoluminescence quantum yields of perovskite quantum dots are close to 100%. The external quantum efficiencies and current efficiencies of perovskite quantum dot light-emitting diodes have reached 8% and 43 cd A-1, respectively, and their nanowire lasers show ultralow-threshold room-temperature lasing with emission tunability and ease of synthesis. Perovskite nanowire photodetectors reached a responsivity of 10 A W-1 and a specific normalized detectivity of the order of 1012 Jones. Different from most reported reviews focusing on photovoltaic applications, we summarize the rapid progress in the study of low-dimensional perovskite materials, as well as their promising applications in optoelectronic devices. In particular, we review the wide tunability of fabrication methods and the state-of-the-art research outputs of low-dimensional perovskite optoelectronic devices. Finally, the anticipated challenges and potential for this exciting research are proposed.

  1. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T.; Lonergan, Mark C.; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau; Javey, Ali

    2016-07-12

    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in VOC for the analyzed devices.

  2. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    KAUST Repository

    Wang, Hsin-Ping

    2016-06-08

    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

  3. Optoelectronic tweezers for medical diagnostics

    Science.gov (United States)

    Kremer, Clemens; Neale, Steven; Menachery, Anoop; Barrett, Mike; Cooper, Jonathan M.

    2012-01-01

    Optoelectronic tweezers (OET) allows the spatial patterning of electric fields through selected illumination of a photoconductive surface. This enables the manipulation of micro particles and cells by creating non-uniform electrical fields that then produce dielectrophoretic (DEP) forces. The DEP responses of cells differ and can produce negative or positive (repelled or attracted to areas of high electric field) forces. Therefore OET can be used to manipulate individual cells and separate different cell types from each other. Thus OET has many applications for medical diagnostics, demonstrated here with work towards diagnosing Human African Trypanosomiasis, also known as sleeping sickness.

  4. OLED devices with internal outcoupling

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jr., Jie Jerry; Sista, Srinivas Prasad; Shi, Xiaolei; Zhao, Ri-An; Chichak, Kelly Scott; Youmans, Jeffrey Michael; Janora, Kevin Henry; Turner, Larry Gene

    2016-12-06

    Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.

  5. π-CONJUGATED OLIGOMERS IN SUPRAMOLECULAR CRYSTALS AND THEIR OPTOELECTRONIC FUNCTIONS

    Institute of Scientific and Technical Information of China (English)

    Zeng-qi Xie; Bing Yang; Yu-guang Ma; Jia-cong Shen

    2007-01-01

    Functional organic molecular materials and conjugated oligomers or polymers now allow the low-cost fabrication of thin films for insertion into new generations of electronic and optoelectronic devices. The performance of these devices relies on the understanding and optimization of several complementary processes. Our goal is to discuss the relationship between the molecular stacking structures and their optoelectronic properties that are of importance in all these areas. The concept of intermolecular interaction should be taken here in the special sense that is inter-dipole coupling. Specifically, we will address the impact of inter-dipole interaction between adjacent molecules in aggregate state on the solid-state emission properties.

  6. Three-dimensional integration of VCSEL-based optoelectronics

    Science.gov (United States)

    Louderback, Duane A.; Lin, Hung-Cheng; Fish, Melanie A.; Cheng, Julien; Guilfoyle, Peter S.

    2005-03-01

    A monolithic optoelectronic device structure with the potential to enable VCSEL-based photonic integrated circuits on GaAs is presented. Using integrated diffraction gratings, the device structure enables the optical output of VCSELs to be coupled to an internal horizontal waveguide, while the optical signals in the waveguide are tapped off to resonant cavity detectors. Since horizontal waveguides are used to route the optical signals between devices, the output mirror transmission of the VCSELs can be eliminated, although we have chosen to retain a small amount of transmission in the top DBR to enable on-wafer testing. The design and fabrication of the monolithically integrated structure, including epitaxial regrowth, is discussed and initial device characteristics are presented.

  7. Heterostructures and quantum devices

    CERN Document Server

    Einspruch, Norman G

    1994-01-01

    Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en

  8. Optoelectronic and nonlinear optical processes in low dimensional semiconductors

    Indian Academy of Sciences (India)

    B P Singh

    2006-11-01

    Spatial confinement of quantum excitations on their characteristic wavelength scale in low dimensional materials offers unique possibilities to engineer the electronic structure and thereby control their physical properties by way of simple manipulation of geometrical parameters. This has led to an overwhelming interest in quasi-zero dimensional semiconductors or quantum dots as tunable materials for multitude of exciting applications in optoelectronic and nonlinear optical devices and quantum information processing. Large nonlinear optical response and high luminescence quantum yield expected in these systems is a consequence of huge enhancement of transition probabilities ensuing from quantum confinement. High quantum efficiency of photoluminescence, however, is not usually realized in the case of bare semiconductor nanoparticles owing to the presence of surface states. In this talk, I will focus on the role of quantum confinement and surface states in ascertaining nonlinear optical and optoelectronic properties of II–VI semiconductor quantum dots and their nanocomposites. I will also discuss the influence of nonlinear optical processes on their optoelectronic characteristics.

  9. Colloidal quantum dot materials for infrared optoelectronics

    Science.gov (United States)

    Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.

    2015-09-01

    Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.

  10. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

    Science.gov (United States)

    Congxin, Xia; Jingbo, Li

    2016-05-01

    Since two-dimensional (2D) graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalcogenides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some personal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

  11. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    Directory of Open Access Journals (Sweden)

    Ioan Botiz

    2014-03-01

    Full Text Available It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties.

  12. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    Science.gov (United States)

    Botiz, Ioan; Stingelin, Natalie

    2014-01-01

    It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. PMID:28788568

  13. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    KAUST Repository

    Botiz, Ioan

    2014-03-19

    It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. © 2014 by the authors.

  14. Attojoule Optoelectronics for Low-Energy Information Processing and Communications: a Tutorial Review

    CERN Document Server

    Miller, David A B

    2016-01-01

    Optics offers unique opportunities for reducing energy in information processing and communications while resolving the problem of interconnect bandwidth density inside machines. Such energy dissipation overall is now at environmentally significant levels; the source of that dissipation is progressively shifting from logic operations to interconnect energies. Without the prospect of substantial reduction in energy per bit communicated, we cannot continue the exponential growth of our use of information. The physics of optics and optoelectronics fundamentally addresses both interconnect energy and bandwidth density, and optics may be the only scalable solution to such problems. Here we summarize the corresponding background, status, opportunities, and research directions for optoelectronic technology and novel optics, including sub-femtojoule devices in waveguide and novel 2D array optical systems. We compare different approaches to low-energy optoelectronic output devices and their scaling, including lasers, ...

  15. Preparation for Ultra High Pure Indium Metal for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Shashwat V. Joshi

    2014-11-01

    Full Text Available Ultra high pure Indium metal is extensively used in optoelectronic devices. Indium and its alloys become potential candidates in aerospace, defense and communication sectors. Purification of Indium has been done by Instrolec-200 Refiner followed by Directional Melting/ Freezing and Solidification Systems. Major targeted impurities are Metallic impurities Ag, Al, As, Bi, Ca, Cu, Fe, Ga, Ge, Mg, Pb, Sb, Si, Sn, and Zn. Purified Indium is characterized by analytical techniques Inductively Coupled Plasma- Optical Emission Spectrophotometry and Inductively Coupled Plasma- Mass Spectrometry.

  16. Optoelectronic analysis of multijunction wire array solar cells

    OpenAIRE

    2013-01-01

    Wire arrays have demonstrated promising photovoltaic performance as single junction solar cells and are well suited to defect mitigation in heteroepitaxy. These attributes can combine in tandem wire array solar cells, potentially leading to high efficiencies. Here, we demonstrate initial growths of GaAs on Si_(0.9)Ge_(0.1) structures and investigate III-V on Si_(1-x)Ge_x device design with an analytical model and optoelectronic simulations. We consider Si_(0.1)Ge_(0.9) wires coated with a GaA...

  17. Regenerative oscillation and four-wave mixing in graphene optoelectronics

    CERN Document Server

    Gu, Tingyi; Yang, Xiaodong; McMillian, James F; van der Zander, Arend; Yu, Min-bing; Lo, Guo-Qiang; Kwong, Dim-Lee; Hone, James; Wong, Chee-Wei

    2012-01-01

    The unique linear and massless band structure of graphene, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here we report three consecutive first-observations in graphene-silicon hybrid optoelectronic devices: (1) ultralow power resonant optical bistability; (2) self-induced regenerative oscillations; and (3) coherent four-wave mixing, all at a few femtojoule cavity recirculating energies. These observations, in comparison with control measurements with solely monolithic silicon cavities, are enabled only by the dramatically-large and chi(3) nonlinearities in graphene and the large Q/V ratios in wavelength-localized photonic crystal cavities. These results demonstrate the feasibility and versatility of hybrid two-dimensional graphene-silicon nanophotonic devices for next-generation chip-scale ultrafast optical communications, radio-freque...

  18. Ultrafast Phase Comparator for Phase-Locked Loop-Based Optoelectronic Clock Recovery Systems

    DEFF Research Database (Denmark)

    Gomez-Agis, F.; Oxenløwe, Leif Katsuo; Kurimura, S.

    2009-01-01

    The authors report on a novel application of a chi((2)) nonlinear optical device as an ultrafast phase comparator, an essential element that allows an optoelectronic phase-locked loop to perform clock recovery of ultrahigh-speed optical time-division multiplexed (OTDM) signals. Particular interest...

  19. Opto-Electronic Oscillator and its Applications

    Science.gov (United States)

    Yao, X. S.; Maleki, L.

    1996-01-01

    We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.

  20. Electrical and optoelectronic properties of two-dimensional materials

    Science.gov (United States)

    Wang, Qiaoming

    also provide a practical guide for rational design of low-cost and high-efficiency nanowire solar cells, and the necessity of considering both optical and electrical effects. Particularly, the significant current crowding effect needs to be considered in on-going 2D nanostructure device development and optimization efforts. More importantly, our van der Waals metal-semiconductor junction devices provide a new route for junction constructions and could have great potential in optoelectronic device applications.

  1. Metal oxides for optoelectronic applications.

    Science.gov (United States)

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  2. Metal oxides for optoelectronic applications

    Science.gov (United States)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  3. Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems

    Science.gov (United States)

    Luc, V. V.; Eliseev, Petr G.; Man'ko, M. A.; Tsotsoriya, M. V.

    1992-12-01

    Output power and fiber-to-fiber gain along with infernal gain of the active element and optoelectronic signal curves at different values of input power versus pumping current are measured for the amplifier modules on the base of AR-coated InGaAsP/InP BH diodes. It is shown that diagnostics of the amplifier module oper''ation regime may be performed by voltage measurements and the optoelectronic signal can be used to monitor optical information passage in the regenerator device or for the distributed access the data transmitted in the lightwave comrnunicat ion systems. I.

  4. Laser applications in the electronics and optoelectronics industry in Japan

    Science.gov (United States)

    Washio, Kunihiko

    1999-07-01

    This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

  5. Comparative study of the structural and optical properties of Cu2SnX3 and Cu2ZnSnX4 (X = S, Se) thin films and optoelectronic devices

    Science.gov (United States)

    Dong, Yuchen; Shen, Peng; Li, Xinran; Chen, Ye; Sun, Lin; Yang, Pingxiong; Chu, Junhao

    2016-11-01

    The structural and optical properties of Cu2SnX3 (CTX, X = S, Se) and Cu2ZnSnX4 (CZTX, X = S, Se) thin films have been investigated experimentally. CTX and CZTX thin films were grown on a Mo-coated soda lime glass substrate by annealing the metallic stack precursors prepared by radio-frequency magnetron sputtering. The similar structure of CTX and CZTX causes overlap of the diffraction peaks in the x-ray diffraction (XRD) pattern. Additionally, selenization annealing is an easier procedure than sulfurization annealing. The results of Raman scattering spectroscopy and Fourier transform infrared spectroscopy provide evidence regarding structure and phase identification to complement the information obtained from XRD. Optical characterization demonstrates that CTX has a narrower band gap than CZTX, attributed to band gap evolution from ternary to quaternary compounds with cation occupation. A photoelectric detector and thin film solar cell (TFSC) were prepared with the eco-friendly compounds Cu2SnS3 (CTS) and Cu2ZnSnS4 (CZTS). Device performance for both photoelectric detector and TFSC is improved by integrating CZTS thin film rather than CTS thin film. The simpler structure of a photoelectric detector provides an easy way to detect the quality of the thin film before it is applied to fabricate the whole TFSC structure.

  6. Digital optical computers at the optoelectronic computing systems center

    Science.gov (United States)

    Jordan, Harry F.

    1991-01-01

    The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

  7. Injectable, Cellular-Scale Optoelectronics with Applications for Wireless Optogenetics

    Science.gov (United States)

    Kim, Tae-il; McCall, Jordan G.; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R.; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, GunChul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.; Bruchas, Michael R.

    2013-04-01

    Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, the ability to insert light sources, detectors, sensors, and other components into precise locations of the deep brain yields versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering.

  8. Fabrication of one-dimensional organic nanomaterials and their optoelectronic applications.

    Science.gov (United States)

    Yu, Hojeong; Kim, Dong Yeong; Lee, Kyung Jin; Oh, Joon Hak

    2014-02-01

    This paper reviews the recent research and development of one-dimensional (1D) organic nanomaterials synthesized from organic semiconductors or conducting polymers and their applications to optoelectronics. We introduce synthetic methodologies for the fabrication of 1D single-crystalline organic nanomaterials and 1D multi-component organic nanostructures, and discuss their optical and electrical properties. In addition, their versatile applications in optoelectronics are highlighted. The fabrication of highly crystalline organic nanomaterials combined with their integration into nanoelectronic devices is recognized as one of the most promising strategies to enhance charge transport properties and achieve device miniaturization. In the last part of this review, we discuss the challenges and the perspectives of organic nanomaterials for applications in the next generation soft electronics, in terms of fabrication, processing, device integration, and investigation on the fundamental mechanisms governing the charge transport behaviors of these advanced materials.

  9. A doping-free approach to carbon nanotube electronics and optoelectronics

    Directory of Open Access Journals (Sweden)

    Lian-Mao Peng

    2012-12-01

    Full Text Available The electronic properties of conventional semiconductor are usually controlled by doping, which introduces carriers into the semiconductor but also distortion and scattering centers to the otherwise perfect lattice, leading to increased scattering and power consumption that becomes the limiting factors for the ultimate performance of the next generation electronic devices. Among new materials that have been considered as potential replacing channel materials for silicon, carbon nanotubes (CNTs have been extensively studied and shown to have all the remarkable electronic properties that an ideal electronic material should have, but controlled doping in CNTs has been proved to be challenging. In this article we will review a doping-free approach for constructing nanoelectronic and optoelectronic devices and integrated circuits. This technique relies on a unique property of CNTs, i.e. high quality ohmic contacts can be made to both the conduction band and valence band of a semiconducting CNT. High performance nanoelectronic and optoelectronic devices have been fabricated using CNTs with this method and performance approach to that of quantum limit. In principle high performance electronic devices and optoelectronic devices can be integrated on the same carbon nanotube with the same footing, and this opens new possibilities for electronics beyond the Moore law in the future.

  10. Fluorescence particle detection using microfluidics and planar optoelectronic elements

    Science.gov (United States)

    Kettlitz, Siegfried W.; Moosmann, Carola; Valouch, Sebastian; Lemmer, Uli

    2014-05-01

    Detection of fluorescent particles is an integral part of flow cytometry for analysis of selectively stained cells. Established flow cytometer designs achieve great sensitivity and throughput but require bulky and expensive components which prohibit mass production of small single-use point-of-care devices. The use of a combination of innovative technologies such as roll-to-roll printed microuidics with integrated optoelectronic components such as printed organic light emitting diodes and printed organic photodiodes enables tremendous opportunities in cost reduction, miniaturization and new application areas. In order to harvest these benefits, the optical setup requires a redesign to eliminate the need for lenses, dichroic mirrors and lasers. We investigate the influence of geometric parameters on the performance of a thin planar design which uses a high power LED as planar light source and a PIN-photodiode as planar detector. Due to the lack of focusing optics and inferior optical filters, the device sensitivity is not yet on par with commercial state of the art flow cytometer setups. From noise measurements, electronic and optical considerations we deduce possible pathways of improving the device performance. We identify that the sensitivity is either limited by dark noise for very short apertures or by noise from background light for long apertures. We calculate the corresponding crossover length. For the device design we conclude that a low device thickness, low particle velocity and short aperture length are necessary to obtain optimal sensitivity.

  11. Electromagnetic Theory for Microwaves and Optoelectronics

    CERN Document Server

    Zhang, Keqian

    2007-01-01

    This book is a first year graduate text on electromagnetic fields and waves. At the same time it serves as a useful reference for researchers and engineers in the areas of microwaves and optoelectronics. Following the presentation of the physical and mathematical foundations of electromagnetic theory, the book discusses the field analysis of electromagnetic waves confined in material boundaries, or so-called guided waves, electromagnetic waves in the dispersive media and anisotropic media, Gaussian beams and scalar diffraction theory. The theories and methods presented in the book are foundations of wireless engineering, microwave and millimeter wave techniques, optoelectronics and optical fiber communication.

  12. Optoelectronics Interfaces for Power Converters

    Directory of Open Access Journals (Sweden)

    Ovidiu Neamtu

    2009-05-01

    Full Text Available The most important issue interface is galvanicseparation between the signal part and the power board.Standards in the field have increased continuouslyelectro-security requirements on the rigidity of thedielectric and insulation resistance. Recommendations forclassical solutions require the use of galvanic separationoptoelectronics devices. Interfacing with a PC or DSP -controller is a target of interposition optical signals viathe power hardware commands.

  13. Enhanced fabrication process of zinc oxide nanowires for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    García Núñez, C., E-mail: carlos.garcia@uam.es [Grupo de Electrónica y Semiconductores, Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Pau, J.L.; Ruíz, E.; García Marín, A.; García, B.J.; Piqueras, J. [Grupo de Electrónica y Semiconductores, Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Shen, G.; Wilbert, D.S.; Kim, S.M.; Kung, P. [Department of Electrical and Computer Engineering, the University of Alabama, Tuscaloosa, AL 35487 (United States)

    2014-03-31

    Zinc oxide (ZnO) nanowires (NWs) based ultraviolet (UV) sensors have been fabricated using different assembly techniques to form functional structures, aiming at the improvement of the performance of NW-based sensors for optoelectronic applications. NWs with diameters and lengths varying between 90–870 nm and 2–20 μm, respectively, were synthesized by controlling the growth conditions in a chemical vapor transport system. Optical properties of NWs were studied by means of transmission spectroscopy. Electrical properties of single ZnO NW-based sensors were analyzed in dark and under UV illumination (at photon wavelength of λ < 370 nm) as a function of the NW diameter. Results of the study indicate that reduction of the NW diameter below 200 nm leads to an improvement of the photocurrent (at λ < 370 nm) up to 10{sup 2} μA and a decrease of the decay time around 150 s. These enhancements may help to improve the performance of ZnO-based optoelectronic devices. - Highlights: • ZnO nanowires (NWs) with diameters 90–870 nm were grown by chemical vapor transport. • ZnO NWs showed strong absorption in the UV range. • Different assembly techniques were tested for preparing ZnO NW-based UV sensors. • Sensor photoresponses were around 10{sup 3} A/W. • Reducing NW diameter below 200 nm improved sensor photosensitivity.

  14. Ultrasensitive optoelectronic sensors for nitrogen oxides and explosives detection

    Science.gov (United States)

    Wojtas, J.; Bielecki, Z.; Stacewicz, T.; Mikolajczyk, J.

    2013-01-01

    The article describes application of cavity enhanced absorption spectroscopy (CEAS) for detection of nitrogen oxides and vapours of explosives. The oxides are important greenhouse gases that are of large influence on environment, living organisms and human health. These compounds are also markers of some human diseases as well as they are emitted by commonly used explosives. Therefore sensitive nitrogen oxides sensors are of great importance for many applications, e. g. for environment protection (air monitoring), for medicine investigation (analyzing of exhaled air) and finally for explosives detection. In the Institute of Optoelectronics MUT different types of optoelectronic sensors employing CEAS were developed. They were designed to measure trace concentration of nitrogen dioxide, nitric oxide, and nitrous oxide. The sensors provide opportunity for simultaneous measurement of these gases concentration at ppb level. Their sensitivity is comparable with sensitivities of instruments based on other methods, e.g. gas chromatography or mass spectrometry. Our sensors were used for some explosives detection as well. The experiment showed that the sensors provide possibility to detect explosive devices consisting of nitroglycerine, ammonium nitrate, TNT, PETN, RDX and HMX.

  15. Laser hyperdoping silicon for enhanced infrared optoelectronic properties

    Science.gov (United States)

    Warrender, Jeffrey M.

    2016-09-01

    Pulsed laser melting and rapid solidification have attracted interest for decades as a method to achieve impurity concentrations in silicon orders of magnitude above the equilibrium solubility limit. The incorporation of sulfur into silicon using this technique led to the observation of strong broadband infrared absorption in the resulting material. This observation, combined with interest in impurity band optoelectronic device concepts, has resulted in renewed interest in laser techniques for achieving high impurity concentrations. In this paper, I review the literature that led to the present understanding of laser hyperdoping and provide a summary of the optical and optoelectronic measurements made on sulfur hyperdoped silicon to date. I mention recent work exploring transition metal impurities and discuss how considerations discovered in early solidification and later rapid solidification work inform our approaches to kinetically trapping such impurities. I also provide a simplified picture of how a laser hyperdoping process is typically carried out, as an entry point for an experimentalist seeking to fabricate such layers.

  16. Prediction of Silicon-Based Layered Structures for Optoelectronic Applications

    Science.gov (United States)

    Luo, Wei; Ma, Yanming; Gong, Xingao; Xiang, Hongjun; CCMG Team

    2015-03-01

    A method based on the particle swarm optimization (PSO) algorithm is presented to design quasi-two-dimensional (Q2D) materials. With this development, various single-layer and bi-layer materials in C, Si, Ge, Sn, and Pb were predicted. A new Si bi-layer structure is found to have a much-favored energy than the previously widely accepted configuration. Both single-layer and bi-layer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2andSi6H2 possessing quasi-direct band gaps of 0.75 eV and 1.59 eV, respectively. Their potential applications for light emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

  17. Microfluidic optoelectronic sensor for salivary diagnostics of stomach cancer.

    Science.gov (United States)

    Zilberman, Yael; Sonkusale, Sameer R

    2015-05-15

    We present a microfluidic optoelectronic sensor for saliva diagnostics with a potential application for non-invasive early diagnosis of stomach cancer. Stomach cancer is the second most common cause of cancer-related deaths in the world. The primary identified cause is infection by a gram-negative bacterium Helicobacter pylori. These bacteria secrete the enzyme urease that converts urea into carbon dioxide (CO2) and ammonia (NH3), leading to their elevated levels in breath and body fluids. The proposed optoelectronic sensor will detect clinically relevant levels of CO2 and NH3 in saliva that can potentially be used for early diagnosis of stomach cancer. The sensor is composed of the embedded in a microfluidic device array of microwells filled with ion-exchange polymer microbeads doped with various organic dyes. The optical response of this unique highly diverse sensor is monitored over a broad spectrum, which provides a platform for cross-reactive sensitivity and allows detection of CO2 and NH3 in saliva at ppm levels.

  18. Coupled Optoelectronic Oscillators:. Application to Low-Jitter Pulse Generation

    Science.gov (United States)

    Yu, N.; Tu, M.; Maleki, L.

    2002-04-01

    Actively mode-locked Erbium-doped fiber lasers (EDFL) have been studied for generating stable ultra-fast pulses ( 5 GHz) [1,2]. These devices can be compact and environmentally stable, quite suitable for fiber-based high-data-rate communications and optical ultra-fast analog-to-digital conversions (ADC) [3]. The pulse-to-pulse jitter of an EDFL-based pulse generator will be ultimately limited by the phase noise of the mode-locking microwave source (typically electronic frequency synthesizers). On the other hand, opto-electronic oscillators (OEO) using fibers have been demonstrated to generate ultra-low phase noise microwaves at 10 GHz and higher [4]. The overall phase noise of an OEO can be much lower than commercially available synthesizers at the offset-frequency range above 100 Hz. Clearly, ultra-low jitter pulses can be generated by taking advantage of the low phase noise of OEOs. In this paper, we report the progress in developing a new low-jitter pulse generator by combing the two technologies. In our approach, the optical oscillator (mode-locked EDFL) and the microwave oscillator (OEO) are coupled through a common Mach-Zehnder (MZ) modulator, thus named coupled opto-electronic oscillator (COEO) [5]. Based on the results of previous OEO study, we can expect a 10 GHz pulse train with jitters less than 10 fs.

  19. Oxide Heteroepitaxy for Flexible Optoelectronics.

    Science.gov (United States)

    Bitla, Yugandhar; Chen, Ching; Lee, Hsien-Chang; Do, Thi Hien; Ma, Chun-Hao; Qui, Le Van; Huang, Chun-Wei; Wu, Wen-Wei; Chang, Li; Chiu, Po-Wen; Chu, Ying-Hao

    2016-11-30

    The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite's superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.

  20. A Long-Term View on Perovskite Optoelectronics.

    Science.gov (United States)

    Docampo, Pablo; Bein, Thomas

    2016-02-16

    Recently, metal halide perovskite materials have become an exciting topic of research for scientists of a wide variety of backgrounds. Perovskites have found application in many fields, starting from photovoltaics and now also making an impact in light-emitting applications. This new class of materials has proven so interesting since it can be easily solution processed while exhibiting materials properties approaching the best inorganic optoelectronic materials such as GaAs and Si. In photovoltaics, in only 3 years, efficiencies have rapidly increased from an initial value of 3.8% to over 20% in recent reports for the commonly employed methylammonium lead iodide (MAPI) perovskite. The first light emitting diodes and light-emitting electrochemical cells have been developed already exhibiting internal quantum efficiencies exceeding 15% for the former and tunable light emission spectra. Despite their processing advantages, perovskite optoelectronic materials suffer from several drawbacks that need to be overcome before the technology becomes industrially relevant and hence achieve long-term application. Chief among these are the sensitivity of the structure toward moisture and crystal phase transitions in the device operation regime, unreliable device performance dictated by the operation history of the device, that is, hysteresis, the inherent toxicity of the structure, and the high cost of the employed charge selective contacts. In this Account, we highlight recent advances toward the long-term viability of perovskite photovoltaics. We identify material decomposition routes and suggest strategies to prevent damage to the structure. In particular, we focus on the effect of moisture upon the structure and stabilization of the material to avoid phase transitions in the solar cell operating range. Furthermore, we show strategies to achieve low-cost chemistries for the development of hole transporters for perovskite solar cells, necessary to be able to compete with other

  1. Optoelectronic line transmission an introduction to fibre optics

    CERN Document Server

    Tricker, Raymond L

    2013-01-01

    Optoelectronic Line Transmission: An Introduction to Fibre Optics presents a basic introduction as well as a background reference manual on fiber optic transmission. The book discusses the basic principles of optical line transmission; the advantages and disadvantages of optical fibers and optoelectronic signalling; the practical applications of optoelectronics; and the future of optoelectronics. The text also describes the theories of optical line transmission; fibers and cables for optical transmission; transmitters including light-emitting diodes and lasers; and receivers including photodi

  2. Mid-Infrared Optoelectronics: Materials and Devices. MIOMD-XII

    Science.gov (United States)

    2014-10-01

    University, 6100 Main Street, Houston, TX 77005‐1827, USA 3Dipartimento Interateneo di Fisica , Università e Politecnico di Bari Via Amendola 173, I‐70126, Bari...Lancaster University, Lancaster, LA1 4YB, UK 2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK 3Dipartimento di Fisica

  3. Piezoelectric Resonance Enhanced Microwave And Optoelectronic Interactive Devices

    Science.gov (United States)

    2013-05-01

    sample and a hollow metal tube welded to each of the holes to prevent energy loss (See Figure A.1). Figure A.1 Configuration and dimension of...a) through Figure A.2 (d), hereafter referred to as positions PE, PF, HE, and HF , where P and H designate whether length direction of the sample is...wave propagation, (d) Position HF : Length horizontal to E-field, Face in line with wave propagation. Additionally using this method a sample oriented

  4. High Speed Quantum-Well Optoelectronic Devices by MBE

    Science.gov (United States)

    1989-05-01

    26 Aline width. Broad area contacts were deposited, and laser fabrication and testing as well as photoconductivity measurements were carried out. Our...alignment to obtain lateral current confinement. In order to simplify the laser fabrication , a possible approach is to design a structure which can employ the

  5. Nitrides optoelectronic devices grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kauer, M.; Bousquet, V.; Hooper, S.E.; Barnes, J.M.; Windle, J.; Tan, W.S.; Heffernan, J. [Sharp Laboratories of Europe, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GB (United Kingdom)

    2007-01-15

    We report on the characteristics of our recent room temperature continuous-wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous-wave (cw) threshold current of 110 mA, corresponding to a threshold current density of 5.5 kA cm{sup -2}. We report on our steps taken to reduce threshold voltage to 7 V. Lasers with uncoated facets have a maximum cw output power of 14 mW and a cw characteristic temperature T{sub 0} of 123 K. Cw laser lifetime vs. power dissipation data is presented, with a maximum lifetime of 2.6 hours for the best laser. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Optoelectronic devices based on graded bandgap structures utilising electroplated semiconductors

    OpenAIRE

    2016-01-01

    The main aim of the work presented in this thesis is to develop low-cost multi-junction graded bandgap solar cells using electroplated semiconductors. The semiconductor materials explored in this research are CdSe, ZnTe, CdS, CdMnTe and CdTe thin films. These layers were characterised for their structural, compositional, morphological, optical, and electrical features using XRD, Raman spectroscopy, EDX, SEM, UV-Vis spectroscopy, PEC cell, C-V, I-V and UPS measurement techniques respectively. ...

  7. Photoemission from optoelectronic materials and their nanostructures

    CERN Document Server

    Ghatak, Kamakhya Prasad; Bhattacharya, Sitangshu

    2009-01-01

    This monograph investigates photoemission from optoelectronic materials and their nanostructures. It contains open-ended research problems which form an integral part of the text and are useful for graduate courses as well as aspiring Ph.D.'s and researchers..

  8. Trends in optoelectronic perimeter security sensors

    Science.gov (United States)

    Szustakowski, Mieczyslaw; Ciurapinski, Wiesław M.; Zyczkowski, Marek

    2007-10-01

    New trends in development of optoelectronic and radar systems with mixed technologies for detection, identification and visualization for critical infrastructure protection are presented. Network-based communication as well as new algorithms of intelligent vision surveillance and image fusion is described.

  9. GaAs optoelectronic neuron arrays

    Science.gov (United States)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  10. Organic photoresponse materials and devices.

    Science.gov (United States)

    Dong, Huanli; Zhu, Hongfei; Meng, Qing; Gong, Xiong; Hu, Wenping

    2012-03-07

    Organic photoresponse materials and devices are critically important to organic optoelectronics and energy crises. The activities of photoresponse in organic materials can be summarized in three effects, photoconductive, photovoltaic and optical memory effects. Correspondingly, devices based on the three effects can be divided into (i) photoconductive devices such as photodetectors, photoreceptors, photoswitches and phototransistors, (ii) photovoltaic devices such as organic solar cells, and (iii) optical data storage devices. It is expected that this systematic analysis of photoresponse materials and devices could be a guide for the better understanding of structure-property relationships of organic materials and provide key clues for the fabrication of high performance organic optoelectronic devices, the integration of them in circuits and the application of them in renewable green energy strategies (critical review, 452 references).

  11. Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.

    Science.gov (United States)

    Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M

    2015-07-15

    We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

  12. Molecular beam epitaxy for high-efficiency nitride optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Heffernan, J.; Kauer, M.; Windle, J.; Hooper, S.E.; Bousquet, V.; Zellweger, C.; Barnes, J.M. [Sharp Laboratories of Europe, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GB (United Kingdom)

    2006-06-15

    We review the significant progress made in the development of nitride laser diodes by molecular beam epitaxy (MBE). We report on our recent result of room temperature continuous-wave operation of InGaN quantum well laser diodes grown by MBE. Ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous-wave threshold current of 125 mA, corresponding to a threshold current density of 5.7 kA cm{sup -2}. The lasers have a threshold voltage of 8.6 V and a lifetime of several minutes. We outline the further technical challenges associated with demonstrating lifetimes of several thousand hours and present an assessment of the potential of MBE as a growth method for commercial quality nitride optoelectronic devices. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Optoelectronic Properties of Semiconductor Quantum Dot Solids for Photovoltaic Applications.

    Science.gov (United States)

    Chistyakov, A A; Zvaigzne, M A; Nikitenko, V R; Tameev, A R; Martynov, I L; Prezhdo, O V

    2017-09-07

    Quantum dot (QD) solids represent a new type of condensed matter drawing high fundamental and applied interest. Quantum confinement in individual QDs, combined with macroscopic scale whole materials, leads to novel exciton and charge transfer features that are particularly relevant to optoelectronic applications. This Perspective discusses the structure of semiconductor QD solids, optical and spectral properties, charge carrier transport, and photovoltaic applications. The distance between adjacent nanoparticles and surface ligands influences greatly electrostatic interactions between QDs and, hence, charge and energy transfer. It is almost inevitable that QD solids exhibit energetic disorder that bears many similarities to disordered organic semiconductors, with charge and exciton transport described by the multiple trapping model. QD solids are synthesized at low cost from colloidal solutions by casting, spraying, and printing. A judicious selection of a layer sequence involving QDs with different size, composition, and ligands can be used to harvest sunlight over a wide spectral range, leading to inexpensive and efficient photovoltaic devices.

  14. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  15. Nanomaterials for Electronics and Optoelectronics

    Science.gov (United States)

    Koehne, Jessica E.; Meyyappan, M.

    2011-01-01

    Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

  16. Communications with chaotic optoelectronic systems cryptography and multiplexing

    Science.gov (United States)

    Rontani, Damien

    With the rapid development of optical communications and the increasing amount of data exchanged, it has become utterly important to provide effective architectures to protect sensitive data. The use of chaotic optoelectronic devices has already demonstrated great potential in terms of additional computational security at the physical layer of the optical network. However, the determination of the security level and the lack of a multi-user framework are two hurdles which have prevented their deployment on a large scale. In this thesis, we propose to address these two issues. First, we investigate the security of a widely used chaotic generator, the external cavity semiconductor laser (ECSL). This is a time-delay system known for providing complex and high-dimensional chaos, but with a low level of security regarding the identification of its most critical parameter, the time delay. We perform a detailed analysis of the in uence of the ECSL parameters to devise how higher levels of security can be achieved and provide a physical interpretation of their origin. Second, we devise new architectures to multiplex optical chaotic signals and realize multi-user communications at high bit rates. We propose two different approaches exploiting known chaotic optoelectronic devices. The first one uses mutually coupled ECSL and extends typical chaos-based encryption strategies, such as chaos-shift keying (CSK) and chaos modulation (CMo). The second one uses an electro-optical oscillator (EOO) with multiple delayed feedback loops and aims first at transposing coded-division multiple access (CDMA) and then at developing novel strategies of encryption and decryption, when the time-delays of each feedback loop are time-dependent.

  17. Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

    Science.gov (United States)

    Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

    2013-10-13

    Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

  18. Non-blinking semiconductor colloidal quantum dots for biology, optoelectronics and quantum optics.

    Science.gov (United States)

    Spinicelli, Piernicola; Mahler, Benoit; Buil, Stéphanie; Quélin, Xavier; Dubertret, Benoit; Hermier, Jean-Pierre

    2009-04-14

    Twinkle, twinkle: The blinking of semiconductor colloidal nanocrystals is the main inconvenience of these bright nanoemitters. There are various approaches for obtaining non-blinking nanocrystals, one of which is to grow a thick coat of CdS on the CdSe core (see picture). Applications of this method in the fields of optoelectronic devices, biologic labelling and quantum information processing are discussed.The blinking of semiconductor colloidal nanocrystals is the main inconvenience of these bright nanoemitters. For some years, research on this phenomenon has demonstrated the possibility to progress beyond this problem by suppressing this fluorescence intermittency in various ways. After a brief overview on the microscopic mechanism of blinking, we review the various approaches used to obtain non-blinking nanocrystals and discuss the commitment of this crucial improvement to applications in the fields of optoelectronic devices, biologic labelling and quantum information processing.

  19. High throughput optoelectronic smart pixel systems using diffractive optics

    Science.gov (United States)

    Chen, Chih-Hao

    1999-12-01

    Recent developments in digital video, multimedia technology and data networks have greatly increased the demand for high bandwidth communication channels and high throughput data processing. Electronics is particularly suited for switching, amplification and logic functions, while optics is more suitable for interconnections and communications with lower energy and crosstalk. In this research, we present the design, testing, integration and demonstration of several optoelectronic smart pixel devices and system architectures. These systems integrate electronic switching/processing capability with parallel optical interconnections to provide high throughput network communication and pipeline data processing. The Smart Pixel Array Cellular Logic processor (SPARCL) is designed in 0.8 m m CMOS and hybrid integrated with Multiple-Quantum-Well (MQW) devices for pipeline image processing. The Smart Pixel Network Interface (SAPIENT) is designed in 0.6 m m GaAs and monolithically integrated with LEDs to implement a highly parallel optical interconnection network. The Translucent Smart Pixel Array (TRANSPAR) design is implemented in two different versions. The first version, TRANSPAR-MQW, is designed in 0.5 m m CMOS and flip-chip integrated with MQW devices to provide 2-D pipeline processing and translucent networking using the Carrier- Sense-MultipleAccess/Collision-Detection (CSMA/CD) protocol. The other version, TRANSPAR-VM, is designed in 1.2 m m CMOS and discretely integrated with VCSEL-MSM (Vertical-Cavity-Surface- Emitting-Laser and Metal-Semiconductor-Metal detectors) chips and driver/receiver chips on a printed circuit board. The TRANSPAR-VM provides an option of using the token ring network protocol in addition to the embedded functions of TRANSPAR-MQW. These optoelectronic smart pixel systems also require micro-optics devices to provide high resolution, high quality optical interconnections and external source arrays. In this research, we describe an innovative

  20. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    KAUST Repository

    Wan, Shanhong

    2015-01-01

    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  1. Architectural and performance considerations for a 10(7)-instruction/sec optoelectronic central processing unit.

    Science.gov (United States)

    Arrathoon, R; Kozaitis, S

    1987-11-01

    Architectural considerations for a multiple-instruction, single-data-based optoelectronic central processing unit operating at 10(7) instructions per second are detailed. Central to the operation of this device is a giant fiber-optic content-addressable memory in a programmable logic array configuration. The design includes four instructions and emphasizes the fan-in and fan-out capabilities of optical systems. Interconnection limitations and scaling issues are examined.

  2. Modelling and studies of the spectral response of some optoelectronic components

    Science.gov (United States)

    Albino, André; Bortoli, Daniele; Tlemçani, Mouhaydine; Joyce, António

    2016-10-01

    Solar radiation takes in today's world, an increasing importance. Different devices are used to carry out spectral and integrated measurements of solar radiation. Thus the sensors can be divided into the fallow types: Calorimetric, Thermomechanical, Thermoelectric and Photoelectric. The first three categories are based on components converting the radiation to temperature (or heat) and then into electrical quantity. On the other hand, the photoelectric sensors are based on semiconductor or optoelectronic elements that when irradiated change their impedance or generate a measurable electric signal. The response function of the sensor element depends not only on the intensity of the radiation but also on its wavelengths. The radiation sensors most widely used fit in the first categories, but thanks to the reduction in manufacturing costs and to the increased integration of electronic systems, the use of the photoelectric-type sensors became more interesting. In this work we present a study of the behavior of different optoelectronic sensor elements. It is intended to verify the static response of the elements to the incident radiation. We study the optoelectronic elements using mathematical models that best fit their response as a function of wavelength. As an input to the model, the solar radiation values are generated with a radiative transfer model. We present a modeling of the spectral response sensors of other types in order to compare the behavior of optoelectronic elements with other sensors currently in use.

  3. Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

    Science.gov (United States)

    Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

    2015-05-01

    Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

  4. Performance Evaluation of an Integrated Optoelectronic Receiver

    Directory of Open Access Journals (Sweden)

    A. Vera-Marquina

    2014-02-01

    Full Text Available This work describes the optical and electrical characterization of an integrated optoelectronic receiver. The receiver is composed of a photodiode and a transimpedance amplifier, both fabricated in silicon technology using a 0.8 μm BiCMOS process. The total area occupied by the photodiode is of 10,000 μm2. In a first step, the generated photocurrent of the photodiode is measured for the wavelengths of 780 nm and 830 nm at different levels of optical power. In a second step, the responsivity and quantum efficiency parameters of the photodiode are computed. Finally, an electrical measurement including the transimpedance amplifier is achieved. A potential application for this optoelectronic receiver is on the first optical communications window.

  5. Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

    Directory of Open Access Journals (Sweden)

    Bing Huang

    2014-05-01

    Full Text Available Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double-sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

  6. Physics of photonic devices

    CERN Document Server

    Chuang, Shun Lien

    2009-01-01

    The most up-to-date book available on the physics of photonic devices This new edition of Physics of Photonic Devices incorporates significant advancements in the field of photonics that have occurred since publication of the first edition (Physics of Optoelectronic Devices). New topics covered include a brief history of the invention of semiconductor lasers, the Lorentz dipole method and metal plasmas, matrix optics, surface plasma waveguides, optical ring resonators, integrated electroabsorption modulator-lasers, and solar cells. It also introduces exciting new fields of research such as:

  7. Enhanced multi-hop operation using hybrid optoelectronic router with time-to-live-based selective forward error correction.

    Science.gov (United States)

    Nakahara, Tatsushi; Suzaki, Yasumasa; Urata, Ryohei; Segawa, Toru; Ishikawa, Hiroshi; Takahashi, Ryo

    2011-12-12

    Multi-hop operation is demonstrated with a prototype hybrid optoelectronic router for optical packet switched networks. The router is realized by combining key optical/optoelectronic device/sub-system technologies and complementary metal-oxide-semiconductor electronics. Using the hop count monitored via the time-to-live field in the packet label, the optoelectronic buffer of the router performs buffering with forward error correction selectively for packets degraded due to multiple hopping every N hops. Experimental results for 10-Gb/s optical packets confirm that the scheme can expand the number of hops while keeping the bit error rate low without the need for optical 3R regenerators at each node.

  8. Laser Recrystallized Silicon/plzt Smart Spatial Light Modulators for Optoelectronic Computing

    Science.gov (United States)

    Ersen, Ali

    By integrating materials for electronic processing with light modulating materials, the computational power of electronics can be combined with the communication power of optics. These light modulating devices integrated with silicon (Smart Spatial Light Modulators or S-SLMs) form a key component of highly parallel fine grain optoelectronic computers. Spatial light modulators developed using the combination of silicon with PLZT (a ferroelectric light modulating ceramic) meet the system requirements for optoelectronic computing. PLZT can be integrated with silicon by depositing a thin layer of polysilicon on the top. However, the quality of polysilicon does not allow the fabrication of circuits of high complexity. It is possible to enlarge polysilicon grain size by melting and solidifying it in a controlled manner. A dual beam laser recrystallization technique has been developed for this purpose. This thesis involves the development and the application of this technique to fabrication of S-SLMs. The goal is to increase the number of transistors in an S-SLM while keeping the array yield of such devices above acceptable levels for optoelectronic computer systems. For this purpose, a NMOS process in laser recrystallized silicon on PLZT has been developed. Arrays with up to 12 transistor unit cell complexity have been fabricated using this technology.

  9. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets

    Science.gov (United States)

    Chen, Xinliang; Li, Honglai; Qi, Zhaoyang; Yang, Tiefeng; Yang, Yankun; Hu, Xuelu; Zhang, Xuehong; Zhu, Xiaoli; Zhuang, Xiujuan; Hu, Wei; Pan, Anlian

    2016-12-01

    Quasi-one-dimensional (1D) nanostructures have been extensively explored for electronic and optoelectronic devices on account of their unique morphologies and versatile physical properties. Here, we report the successful synthesis of GaInAsSb alloy nanosheets by a simple chemical vapor deposition method. The grown GaInAsSb alloy nanosheets are pure zinc-blende single crystals, which show nanosize-induced extraordinary optoelectronic properties as compared with bulk materials. μ-Raman spectra exhibit a multi-mode phonon vibration behavior with clear frequency shifts under varied laser power. Photoluminescence measurements reveal a strong light emission in the near-infrared region (1985 nm), and the obtained Varshni thermal coefficients α and β are smaller than those of the bulk counterparts due to the size confinement effect. In addition, photodetectors (PDs) based on these single-alloy nanosheets were constructed for the first time. The PDs show a strong response in the near-infrared region with the external quantum efficiency of 8.05 × 104%, and the responsivity of 0.675 × 103 A W-1. These novel nanostructures would make contributions to the study of fundamental physical phenomena in quasi-1D nanomaterial systems and can be potential building blocks for optoelectronic and quantum devices.

  10. The Search for Sub-Bandgap Optoelectronic Response in Silicon Hyperdoped with Gold

    Science.gov (United States)

    Mailoa, Jonathan; Akey, Austin; Mathews, Jay; Hutchinson, David; Simmons, Christie; Sullivan, Joseph; Winkler, Mark; Recht, Dan; Persans, Peter; Warrender, Jeffrey; Aziz, Michael; Buonassisi, Tonio

    2013-03-01

    Deep-level dopants have been long known as the lifetime-killer in microelectronic devices. Nevertheless, it has been shown that deep-level donor can facilitate strong absorption of light with energy below the semiconductor bandgap. Due to this strong sub-bandgap absorption, it is possible to engineer silicon devices exhibiting sub-bandgap optoelectronic response, such as silicon-based infrared photodetectors and intermediate-band solar cells. In this work, we show the optoelectronic response of silicon doped with a gold concentration surpassing the equilibrium solubility limit (gold-hyperdoped silicon, Au:Si). We fabricated Au:Si by ion implantation followed by nanosecond pulse laser melting, achieving a gold dopant concentration of over 1019 cm-3. UV-VIS spectrophotometry was performed to measure sub-bandgap light absorption in the Au:Si layer. Our samples with the highest gold concentration have 10-15% absorption of sub-bandgap light. We will present and discuss the sub-bandgap optoelectronic response of this gold-doped silicon.

  11. Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications.

    Science.gov (United States)

    Zhao, Yixin; Zhu, Kai

    2016-02-07

    Organic and inorganic hybrid perovskites (e.g., CH(3)NH(3)PbI(3)), with advantages of facile processing, tunable bandgaps, and superior charge-transfer properties, have emerged as a new class of revolutionary optoelectronic semiconductors promising for various applications. Perovskite solar cells constructed with a variety of configurations have demonstrated unprecedented progress in efficiency, reaching about 20% from multiple groups after only several years of active research. A key to this success is the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of hybrid perovskites. The rapid progress in material synthesis and device fabrication has also promoted the development of other optoelectronic applications including light-emitting diodes, photodetectors, and transistors. Both experimental and theoretical investigations on organic-inorganic hybrid perovskites have enabled some critical fundamental understandings of this material system. Recent studies have also demonstrated progress in addressing the potential stability issue, which has been identified as a main challenge for future research on halide perovskites. Here, we review recent progress on hybrid perovskites including basic chemical and crystal structures, chemical synthesis of bulk/nanocrystals and thin films with their chemical and physical properties, device configurations, operation principles for various optoelectronic applications (with a focus on solar cells), and photophysics of charge-carrier dynamics. We also discuss the importance of further understanding of the fundamental properties of hybrid perovskites, especially those related to chemical and structural stabilities.

  12. Toward silicon-based longwave integrated optoelectronics (LIO)

    Science.gov (United States)

    Soref, Richard

    2008-02-01

    The vision of longwave silicon photonics articulated in the Journal of Optics A, vol. 8, pp 840-848, 2006 has now come into sharper focus. There is evidence that newly designed silicon-based optoelectronic circuits will operate at any wavelength within the wide 1.6 to 200 μm range. Approaches to that LWIR operation are reviewed here. A long-range goal is to manufacture LWIR OEIC chips in a silicon foundry by integrating photonics on-chip with CMOS, bipolar, or BiCMOS micro-electronics. A principal LWIR application now emerging is the sensing of chemical and biological agents with an OE laboratory-on-a-chip. Regarding on-chip IR sources, the hybrid evanescent-wave integration of III-V interband-cascade lasers and quantum-cascade lasers on silicon (or Ge/Si) waveguides is a promising technique, although an alternative all-group-IV solution is presently taking shape in the form of silicon-based Ge/SiGeSn band-to-band and inter-subband lasers. There is plenty of room for creativity in developing a complete suite of LWIR components. Materials modification, device innovation, and scaling of waveguide dimensions are needed to implement microphotonic, plasmonic and photonic-crystal LWIR devices, both active and passive. Such innovation will likely lead to significant LIO applications.

  13. Optoelectronic analysis of multijunction wire array solar cells

    Science.gov (United States)

    Turner-Evans, Daniel B.; Chen, Christopher T.; Emmer, Hal; McMahon, William E.; Atwater, Harry A.

    2013-07-01

    Wire arrays have demonstrated promising photovoltaic performance as single junction solar cells and are well suited to defect mitigation in heteroepitaxy. These attributes can combine in tandem wire array solar cells, potentially leading to high efficiencies. Here, we demonstrate initial growths of GaAs on Si0.9Ge0.1 structures and investigate III-V on Si1-xGex device design with an analytical model and optoelectronic simulations. We consider Si0.1Ge0.9 wires coated with a GaAs0.9P0.1 shell in three different geometries: conformal, hemispherical, and spherical. The analytical model indicates that efficiencies approaching 34% are achievable with high quality materials. Full field electromagnetic simulations serve to elucidate the optical loss mechanisms and demonstrate light guiding into the wire core. Simulated current-voltage curves under solar illumination reveal the impact of a varying GaAs0.9P0.1 minority carrier lifetime. Finally, defective regions at the hetero-interface are shown to have a negligible effect on device performance if highly doped so as to serve as a back surface field. Overall, the growths and the model demonstrate the feasibility of the proposed geometries and can be used to guide tandem wire array solar cell designs.

  14. Optoelectronic Properties of Hybrid Titania Nanotubes/Hematite Nanoparticles Structures

    Science.gov (United States)

    Wang, Lili; Panaitescu, Eugen; Menon, Latika

    2015-03-01

    TiO2/Fe2O3 nanostructures are becoming promising alternatives for improving cost effectiveness (in /W) of emerging photovoltaic devices such as dye sensitized or metal-insulator-semiconductor solar cells, combining the low cost, earth abundance and stability of the materials with the enhanced performance offered by the nanoscale architecture. We investigated novel, high quality titania/hematite composites, namely hematite nanoparticle decorated titania nanotube arrays, which were obtained by a simple, inexpensive and easily scalable two-step process, electrochemical anodization of titanium followed by forced hydrolysis. The titania nanotubular scaffold provides a large active surface area, while the iron oxide nanoparticles significantly broaden the light absorption range into the visible region. The morphological and structural characteristics of the samples were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The light absorption efficiency was measured by diffuse reflectance spectroscopy (DRS), and the optoelectronic behavior of the hybrid structures was analyzed by IV measurements under simulated solar illumination. The influence of the synthesis process and the structure design on the photovoltaic performance is currently investigated for optimal device prototyping.

  15. Research progress of low-dimensional perovskites: synthesis, properties and optoelectronic applications

    Science.gov (United States)

    Min, Xinzhe; Pengchen, Zhu; Gu, Shuai; Jia, Zhu

    2017-01-01

    The lead halide-based perovskites, for instance, CH3NH3PbX3 and CsPbX3 (X = Cl, Br, I), have received a lot of attention. Compared with bulk materials, low-dimensional perovskites have demonstrated a range of unique optical, electrical and mechanical properties, which enable wide applications in solar cells, lasers and other optoelectronic devices. In this paper, we provide a summary of the research progress of the low-dimensional perovskites in recent years, from synthesis methods, basic properties to their optoelectronic applications. Project jointly supported by the State Key Program for Basic Research of China (No. 2015CB659300), the National Natural Science Foundation of China (Nos. 11321063, 11574143), the Natural Science Foundation of Jiangsu Province (Nos. BK20150056, BK20151079), the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), and the Fundamental Research Funds for the Central Universities.

  16. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector

    Science.gov (United States)

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh

    2016-08-01

    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal-semiconductor-metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW-1 and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 1010 cm Hz1/2 W-1 at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum.

  17. The optoelectronic properties of a solar energy material: Ag2HgSnS4

    Science.gov (United States)

    Hadjri Mebarki, S.; Amrani, B.; Driss Khodja, K.; Khelil, A.

    2017-03-01

    We used an ab initio full potential-linearized augmented plane wave technique within the density functional theory to study the structural and optoelectronic properties of Ag2HgSnS4 in a wurtzite-stannite phase. The exchange correlation effects are included through the generalized gradient approximation and modified Becke-Johnson exchange potential. Various physical quantities, such as lattice parameter, bulk modulus, band structure and density of states, are given. Also, we have presented the results of the effective mass for the electrons in the CB and the holes in the BV. We show that the modified Becke-Johnson exchange potential can predict the energy band gap in better agreement with the experiment. In addition the dielectric function and energy-loss function are presented for the energy range of 0-26 eV. The electronic and optical properties indicate that this compound can be successfully used in optoelectronic devices

  18. Statistical conjugated polymers comprising optoelectronically distinct units.

    Science.gov (United States)

    Hollinger, Jon; Sun, Jing; Gao, Dong; Karl, Dominik; Seferos, Dwight S

    2013-03-12

    Poly(3-heptylselenophene)-stat-poly(3-hexylthiophene) is synthesized and characterized in terms of its crystallinity and performance in an organic photovoltaic (OPV) cell. Despite the random distribution of units along the polymer main chain, the material is semi-crystalline, as demonstrated by differential scanning calorimetry and wide-angle X-ray diffraction. Thin-film absorption suggests an increased compatibility than seen with 3-hexylselenophene monomer. Optoelectronic properties are an average of the two homopolymers, and OPV performance is enhanced by a broadened absorption profile and a favorable morphology.

  19. Monolithically integrated optoelectronic down-converter (MIOD)

    Science.gov (United States)

    Portnoi, Efrim L.; Venus, G. B.; Khazan, A. A.; Gorfinkel, Vera B.; Kompa, Guenter; Avrutin, Evgenii A.; Thayne, Iain G.; Barrow, David A.; Marsh, John H.

    1995-06-01

    Optoelectronic down-conversion of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the concept of down conversion in a laser diode is presented.

  20. Pole movement in electronic and optoelectronic oscillators

    Science.gov (United States)

    Chatterjee, S.; Pal, S.; Biswas, B. N.

    2013-12-01

    An RLC circuit with poles on the left half of the complex frequency plane is capable of executing transient oscillations. During this period, energy conversion from potential to kinetic and from kinetic to potential continuously goes on, until the stored energy is lost in dissipation through the resistance. On the other hand, in an electronic or opto-electronic oscillator with an embedded RLC circuit, the poles are forcibly placed on the right-half plane (RHP) and as far as practicable away from the imaginary axis in order to help the growth of oscillation as quickly as possible. And ultimately, it is imagined that, like the case of an ideal linear harmonic oscillator, the poles are frozen on the imaginary axis so that the oscillation neither grows nor decays. The authors feel that this act of holding the poles right on the imaginary axis is a theoretical conjecture in a soft or hard self-excited oscillator. In this article, a detailed discussion on pole movement in an electronic and opto-electronic oscillator is carried out from the basic concept. A new analytical method for estimating the time-dependent part of the pole is introduced here.

  1. Optoelectronic pH Meter: Further Details

    Science.gov (United States)

    Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

    2009-01-01

    A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

  2. Optoelectronic sensors for subsea oil and gas production

    Science.gov (United States)

    McStay, D.; Shiach, G.; Nolan, A.; McAvoy, S.

    2007-07-01

    The potential for optoelectronic sensor technology to provide the monitoring and control systems required for advanced subsea hydrocarbon production management is described. The utilisation of optoelectronic sensor technology to produce a new class of subsea Christmas Tree with in-built enhanced production monitoring and control systems as well as effective environmental monitoring systems is reported.

  3. Introduction to the new journal: Frontiers of Optoelectronics in China

    Institute of Scientific and Technical Information of China (English)

    Bingkun ZHOU

    2008-01-01

    @@ China, together with the world, has made enormous achievements in the field of optoelectronics in recent years and is still now undergoing the processes of rapid advancement.Chinese Researchers have devoted themselves to finding out ways to solve the problems in optoelectronics, and have made substantial progress theoretically and experimentally.Thus, a platform is needed on which researchers could share their new findings and technological advances in the field of optoelectronics and related disciplines with colleagues around the world.The new launched journal, Frontiers of Optoelectronics in China, aims to serve such a platform that provides a way for scientists all over the world to share the ideas and technologies in the field of optoelectronics.

  4. Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye Nanostructures

    Science.gov (United States)

    Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong

    2014-02-01

    Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A-1 without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs.

  5. Quantum dot-based organic-inorganic hybrid materials for optoelectronic applications (Conference Presentation)

    Science.gov (United States)

    Lee, Kwang-Sup

    2016-10-01

    Our recent research involves the design, characterization and testing of devices constituting low bandgap conjugated polymers, surface-engineered quantum dots (QDs), carbon nanotube (CNT)-QDs, QDs decorated nanowires, and QD coupled conjugated polymers. The resulting hybrid materials can be used for facilitating the charge/energy transfer and enhancing the charge carrier mobility in highly efficient optoelectronic and photonic devices. Exploiting the full potential of quantum dots (QDs) in optoelectronic devices require efficient mechanisms for transfer of energy or electrons produced in the optically excited QDs. We propose semiconducting π-conjugated molecules as ligands to achieve energy or charge transfer. The hybridization of p-type π-conjugated molecules to the surface of n-type QDs can induce distinct luminescence and charge transport characteristics due to energy and/or charge transfer effects. QDs and π-conjugated molecule hybrids with controlled luminescent properties can be used for new active materials for light-emitting diodes and flexible displays. In addition, such hybrid systems with enhanced charge transfer efficiency can be used for nanoscale photovoltaic devices. We have also explored single nanoparticle based electronics using QDs and π-conjugated molecule hybrids with molecular-scale n-p or n-insulating (ins)-p-heterojunction structures.

  6. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  7. Methods and devices for fabricating and assembling printable semiconductor elements

    Science.gov (United States)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2009-11-24

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  8. Methods and devices for fabricating and assembling printable semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2017-09-19

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  9. Methods and devices for fabricating and assembling printable semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2013-05-14

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  10. Methods and devices for fabricating and assembling printable semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Nuzzo, Ralph G [Champaign, IL; Rogers, John A [Champaign, IL; Menard, Etienne [Durham, NC; Lee, Keon Jae [Daejeon, KR; Khang, Dahl-Young [Urbana, IL; Sun, Yugang [Champaign, IL; Meitl, Matthew [Raleigh, NC; Zhu, Zhengtao [Urbana, IL

    2011-07-19

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  11. Methods and devices for fabricating and assembling printable semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Nuzzo, Ralph G [Champaign, IL; Rogers, John A [Champaign, IL; Menard, Etienne [Urbana, IL; Lee, Keon Jae [Savoy, IL; Khang, Dahl-Young [Urbana, IL; Sun, Yugang [Champaign, IL; Meitl, Matthew [Champaign, IL; Zhu, Zhengtao [Urbana, IL

    2009-11-24

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  12. Methods and devices for fabricating and assembling printable semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2014-03-04

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  13. Direct anisotropic growth of CdS nanocrystals in thermotropic liquid crystal templates for heterojunction optoelectronics.

    Science.gov (United States)

    Yuan, Kai; Chen, Lie; Chen, Yiwang

    2014-09-01

    The direct growth of CdS nanocrystals in functional solid-state thermotropic liquid crystal (LC) small molecules and a conjugated LC polymer by in situ thermal decomposition of a single-source cadmium xanthate precursor to fabricate LC/CdS hybrid nanocomposites is described. The influence of thermal annealing temperature of the LC/CdS precursors upon the nanomorphology, photophysics, and optoelectronic properties of the LC/CdS nanocomposites is systematically studied. Steady-state PL and ultrafast emission dynamics studies show that the charge-transfer rates are strongly dependent on the thermal annealing temperature. Notably, annealing at liquid-crystal state temperature promotes a more organized nanomorphology of the LC/CdS nanocomposites with improved photophysics and optoelectronic properties. The results confirm that thermotropic LCs can be ideal candidates as organization templates for the control of organic/inorganic hybrid nanocomposites at the nanoscale level. The results also demonstrate that in situ growth of semiconducting nanocrystals in thermotropic LCs is a versatile route to hybrid organic/inorganic nanocomposites and optoelectronic devices.

  14. Molecular doping of single-walled carbon nanotube transistors: optoelectronic study

    Science.gov (United States)

    Zhang, Jiangbin; Emelianov, Aleksei V.; Bakulin, Artem A.; Bobrinetskiy, Ivan I.

    2016-09-01

    Single-walled carbon nanotubes (SWCNT) are a promising material for future optoelectronic applications, including flexible electrodes and field-effect transistors. Molecular doping of carbon nanotube surface can be an effective way to control the electronic structure and charge dynamics of these material systems. Herein, two organic semiconductors with different energy level alignment in respect to SWCNT are used to dope the channel of the SWCNT-based transistor. The effects of doping on the device performance are studied with a set of optoelectronic measurements. For the studied system, we observed an opposite change in photo-resistance, depending on the type (electron donor vs electron acceptor) of the dopants. We attribute this effect to interplay between two effects: (i) the change in the carrier concentration and (ii) the formation of trapping states at the SWCNT surface. We also observed a modest 4 pA photocurrent generation in the doped systems, which indicates that the studied system could be used as a platform for multi-pulse optoelectronic experiments with photocurrent detection.

  15. Organic non-linear optics and opto-electronics

    Science.gov (United States)

    Maldonado, J. L.; Ramos-Ortíz, G.; Rodríguez, M.; Meneses-Nava, M. A.; Barbosa-García, O.; Santillán, R.; Farfán, N.

    2010-12-01

    π-conjugated organic molecules and polymers are of great importance in physics, chemistry, material science and engineering. It is expected that, in the near future, organic materials will find widespread use in many technological applications. In the case of organic opto-electronic systems, the list of devices includes light emitting diodes (OLEDs), photovoltaic cells (OPVs), field-effect transistors (OFET), photorefractive materials for light manipulation, among others. These materials are also used for photonic applications: all-optical switching, modulators, optical correlators, plastic waveguides, all polymeric integrated circuits, solid-state lasers, and for biophotonic applications as in the case of the development of organic labels for multiphoton microscopy and photodynamic therapy. The advances in the developing of organic compounds with better mechanical, electrical, and optical (linear and non-linear) characteristics are of a great importance for this field. Here, we present the research on this area carried out at the Centro de Investigaciones en Óp-tica (CIO), in collaboration with Chemistry Departments of different institutions. This work focuses on the optical characterization of materials through several techniques such as TOF, FWM, TBC, THG Maker Fringes, HRS, Z-scan, and TPEF. Additionally, some applications, such as dynamic holography by using photorefractive polymers, and OPVs cells will be discussed.

  16. Manipulating and assembling metallic beads with Optoelectronic Tweezers

    Science.gov (United States)

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M.; Neale, Steven L.

    2016-09-01

    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10-9 N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction.

  17. Solution processed semiconductor alloy nanowire arrays for optoelectronic applications

    Science.gov (United States)

    Shimpi, Paresh R.

    In this dissertation, we use ZnO nanowire as a model system to investigate the potential of solution routes for bandgap engineering in semiconductor nanowires. Excitingly, successful Mg-alloying into ZnO nanowire arrays has been achieved using a two-step sequential hydrothermal method at low temperature (green-yellow-red band (˜400-660 nm) increased whereas intensity of NBE UV peak decreased and completely got quenched. This might be due to interface diffusion of oxidized Si (SiOx) and formation of (Zn,Mg)1.7SiO4 epitaxially overcoated around individual ZnMgO nanowire. On the other hand, ambient annealed ZnMgO nanowires grown on quartz showed a ˜6-10 nm blue-shift in NBE UV emission, indicating significantly enhanced inter-diffusion of Mg into ZnO nanowires in this oxygen-rich environment. The successfully developed solution process for semiconductor nanowires alloying has few advantages in low cost, large yield, environmental friendliness and low reaction temperature. This solution processed ZnMgO nanowire arrays could provide a new class of nanoscale building blocks for various optoelectronic devices in UV lighting and visible solar energy harvesting.

  18. Investigation of electrical and optoelectronic properties of zinc oxide nanowires

    Science.gov (United States)

    Zhang, D.; Lee, S. K.; Chava, S.; Berven, C. A.; Katkanant, V.

    2011-10-01

    Zinc oxide (ZnO) nanowires have been synthesized by using tubular furnace chemical vapor deposition technique. The morphology, chemical composition and crystal structure of as-synthesized ZnO nanowires were examined by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) techniques. Four-terminal current-voltage ( I- V) measurements were employed to study the electrical conductance of ZnO nanowires under various testing gas environments for gas sensing purpose. The I- V curves at temperature ranging from 150 to 300 K were recorded in the testing chamber under vacuum. The Arrhenius plot shows perfect linear relationship between the logarithm of the current I and inverse temperature 1/ T. The donor level of the semiconducting nanowires is about 326 meV. The I- V behaviors were found to be reversible and repeatable with testing gases. The electrical conductivity was enhanced by a factor of four with ambient CO gas compared to that in vacuum and other testing gases. The optoelectronic properties of the ZnO nanowires were obtained by two-terminal I- V measurement method while the nanowires were illuminated by a ruby laser. The electrical conductivity was increased by 60% when the laser was present in comparison to that when the laser was off. Those significant changes suggest that nano-devices constructed by the ZnO nanowires could be used in gas sensing and optical switching applications.

  19. Multilevel organization in hybrid thin films for optoelectronic applications.

    Science.gov (United States)

    Vohra, Varun; Bolognesi, Alberto; Calzaferri, Gion; Botta, Chiara

    2009-10-20

    In this work we report two simple approaches to prepare hybrid thin films displaying a high concentration of zeolite crystals that could be used as active layers in optoelectronic devices. In the first approach, in order to organize nanodimensional zeolite crystals of 40 nm diameter in an electroactive environment, we chemically modify their external surface and play on the hydrophilic/hydrophobic forces. We obtain inorganic nanocrystals that self-organize in honeycomb electroluminescent polymer structures obtained by breath figure formation. The different functionalizations of the zeolite surface result in different organizations inside the cavities of the polymeric structure. The second approach involving soft-litography techniques allows one to arrange single dye-loaded zeolite L crystals of 800 nm of length by mechanical loading into the nanocavities of a conjugated polymer. Both techniques result in the formation of thin hybrid films displaying three levels of organization: organization of the dye molecules inside the zeolite nanochannels, organization of the zeolite crystals inside the polymer cavities, and micro- or nanostructuration of the polymer.

  20. Laser processing of components for polymer mircofluidic and optoelectronic products

    Science.gov (United States)

    Gillner, Arnold; Bremus-Koebberling, Elke A.; Wehner, Martin; Russek, Ulrich A.; Berden, Thomas

    2001-06-01

    Miniaturization is one of the keywords for the production of customer oriented and highly integrated consumer products like mobile phones, portables and other products from the daily life and there are some first silicon made products like pressure sensors, acceleration sensors and micro fluidic components, which are built in automobiles, washing machines and medical products. However, not all applications can be covered with this material, because of the limitations in lateral and 3-dimensional structuring, the mechanical behavior, the functionality and the costs of silicon. Therefore other materials, like polymers have been selected as suitable candidates for cost effective mass products. This holds especially for medical and optical applications, where the properties of selected polymers, like biocompatibility, inert chemical behavior and high transparency can be used. For this material laser micro processing offers appropriate solutions for structuring as well as for packaging with high flexibility, material variety, structure size, processing speed and easy integration into existing fabrication plants. The paper presents recent results and industrial applications of laser micro processing for polymer micro fluidic devices, like micro analysis systems, micro reactors and medical micro implants, where excimer radiation is used for lateral structuring and diode lasers have used for joining and packaging. Similar technologies have been applied to polymer waveguides to produce passive optoelectronic components for high speed interconnection with surface roughness less than 20 nm and low attenuation. The paper also reviews the technical and economical limitations and the potential of the technology for other micro products.

  1. Seeing smells: development of an optoelectronic nose

    Directory of Open Access Journals (Sweden)

    Kenneth S. Suslick

    2007-06-01

    Full Text Available The development of an array of chemically-responsive dyes on a porous membrane and in its use as a general sensor for odors and volatile organic compounds (VOCs is reviewed. These colorimetric sensor arrays (CSA act as an "optoelectronic nose" by using an array of multiple dyes whose color changes are based on the full range of intermolecular interactions. The CSA is digitally imaged before and after exposure and the resulting difference map provides a digital fingerprint for any VOC or mixture of odorants. The result is an enormous increase in discriminatory power among odorants compared to prior electronic nose technologies. For the detection of biologically important analytes, including amines, carboxylic acids, and thiols, high sensitivities (ppbv have been demonstrated. The array is essentially non-responsive to changes in humidity due to the hydrophobicity of the dyes and membrane.

  2. Optoelectronic circuits in nanometer CMOS technology

    CERN Document Server

    Atef, Mohamed

    2016-01-01

    This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

  3. Middle infrared optoelectronic absorption systems for monitoring physiological glucose solutions

    Science.gov (United States)

    Martin, W. Blake

    coating could limit the adsorption of glucose to the surface but still allow physiological monitoring. Three middle infrared optoelectronic absorption systems have been designed for monitoring glucose in a physiological solution. The systems are applicable for the monitoring of glucose. These systems may lead to a useful monitoring device for the diabetic so that the universal complications associated with the disease may be limited.

  4. Computational evaluation of optoelectronic properties for organic/carbon materials.

    Science.gov (United States)

    Shuai, Zhigang; Wang, Dong; Peng, Qian; Geng, Hua

    2014-11-18

    CONSPECTUS: Organic optoelectronic materials are used in a variety of devices, including light-emitting diodes, field-effect transistors, photovoltaics, thermoelectrics, spintronics, and chemico- and biosensors. The processes that determine the intrinsic optoelectronic properties occur either in the photoexcited states or within the electron-pumped charged species, and computations that predict these optical and electrical properties would help researchers design new materials. In this Account, we describe recent advances in related density functional theory (DFT) methods and present case studies that examine the efficiency of light emission, carrier mobility, and thermoelectric figures of merit by calculation of the electron-vibration couplings. First we present a unified vibrational correlation function formalism to evaluate the excited-state radiative decay rate constant kr, the nonradiative decay rate constant knr, the intersystem crossing rate constant kISC, and the optical spectra. The molecular parameters that appear in the formalism, such as the electronic excited-state energy, vibrational modes, and vibronic couplings, require extensive DFT calculations. We used experiments for anthracene at both low and ambient temperatures to benchmark the calculated photophysical parameters. In the framework of Fermi's golden rule, we incorporated the non-adiabatic coupling and the spin-orbit coupling to evaluate the phosphorescence efficiency and emission spectrum. Both of these are in good agreement with experimental results for anthracene and iridium compounds. Band electron scattering and relaxation processes within Boltzmann theory can describe charge transport in two-dimensional carbon materials and closely packed organic solids. For simplicity, we considered only the acoustic phonon scattering as modeled by the deformation potential approximation coupled with extensive DFT calculations for band structures. We then related the carrier mobility to the band

  5. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact,...

  6. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices....

  7. Release strategies for making transferable semiconductor structures, devices and device components

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J.

    2016-05-24

    Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  8. Release strategies for making transferable semiconductor structures, devices and device components

    Science.gov (United States)

    Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

    2014-11-25

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  9. Carbon dots—Emerging light emitters for bioimaging, cancer therapy and optoelectronics

    KAUST Repository

    Hola, Katerina

    2014-10-01

    © 2014 Elsevier Ltd. All rights reserved. Carbon dots represent an emerging class of fluorescent materials and provide a broad application potential in various fields of biomedicine and optoelectronics. In this review, we introduce various synthetic strategies and basic photoluminescence properties of carbon dots, and then address their advanced in vitro and in vivo bioapplications including cell imaging, photoacoustic imaging, photodynamic therapy and targeted drug delivery. We further consider the applicability of carbon dots as components of light emitting diodes, which include carbon dot based electroluminescence, optical down-conversion, and hybrid plasmonic devices. The review concludes with an outlook towards future developments of these emerging light-emitting materials.

  10. The Effect of Illumination on the Gelation Process of Optoelectronic Materials

    Science.gov (United States)

    Morgan, Brian; Dadmun, Mark

    2015-03-01

    A tremendous amount of insight into the functionality of conjugated polymers in optoelectronic devices can be gained by the study of these materials as they progress through the gelation process. The nature of the percolated network structures formed directly affects exciton transport and device efficiency, thus precise knowledge of the evolution of structures provides crucial information towards improving device efficiency via processing techniques. Additionally, select optoelectronic polymers have exhibited reversibly altered physical properties such as viscosity upon exposure to white light, potentially indicative of temporary conformation changes. We have conducted a series of small angle neutron scattering experiments to probe the temperature-driven gelation process of the conjugated photoactive polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) in both the presence and complete absence of white light. Fitting the resultant data indicates the creation and steady growth of cylindrical aggregates formed by the agglomeration of free chain P3HT as the growth process. Furthermore, clear differences between illuminated and non-illuminated gels are observed across multiple length scales, pointing towards an optically-induced variation in the gelation process.

  11. New melt-processable thermoplastic polyimides for opto-electronic applications

    Science.gov (United States)

    Narayanan, Aditya; Haralur, Gurulingamurthy

    2012-10-01

    The rapid development and adoption of digital technology is leading to an increase in demand for smaller, faster digital data devices and faster digital telecommunication networks. This trend requires increased network bandwidth to handle large amounts of data and seamless integration of network devices with compatible end-user devices. This need is being met by using fiber-optic and photonics technology, infra-red (IR) signals to transmit information, and is fundamental changing the communication industry, thereby creating a need for new polymeric materials. New ULTEM* polyetherimide (PEI) and EXTEM* thermoplastic polyimide (TPI) resins meet the material requirements for the optoelectronics industry. These resins have building blocks enabling IR light transmission without degrading signal quality. They can be injection-molded into thin, precision optical lenses and connectors. ULTEM* resins are been widely used in this industry as fiber-optic components in trans-receivers. EXTEM* resins are amenable to lead-free soldering (LFS), a greener industrial assembly process. While still being IR-transparent, EXTEM* resin is an ideal material for LFS capable substrates, connectors and lenses. An optical product portfolio has been developed and is being presented as a solution to the opto-electronics component industry and some of the successful applications therein.

  12. Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance

    KAUST Repository

    Banavoth, Murali

    2016-12-14

    Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including various fabrication methods, device architectures, and surface passivation, progress is yet to be made in understanding the actual operational temperature on the electronic properties and the device performances. Therefore, the substantial effect of temperature on the optoelectronic properties, charge separation, charge recombination dynamics, and photoconversion efficiency are explored. The results clearly demonstrated a significant enhancement in the carrier mobility, photocurrent, charge carrier lifetime, and solar cell performance in the 60 ± 5 °C temperature range. In this temperature range, perovskite crystal exhibits a highly symmetrical relaxed cubic structure with well-aligned domains that are perpendicular to a principal axis, thereby remarkably improving the device operation. This finding provides a new key variable component and paves the way toward using perovskite crystals in highly efficient photovoltaic cells.

  13. Chip scale low dimensional materials: optoelectronics & nonlinear optics

    Science.gov (United States)

    Gu, Tingyi

    The CMOS foundry infrastructure enables integration of high density, high performance optical transceivers. We developed integrated devices that assemble resonators, waveguide, tapered couplers, pn junction and electrodes. Not only the volume standard manufacture in silicon foundry is promising to low-lost optical components operating at IR and mid-IR range, it also provides a robust platform for revealing new physical phenomenon. The thesis starts from comparison between photonic crystal and micro-ring resonators based on chip routers, showing photonic crystal switches have small footprint, consume low operation power, but its higher linear loss may require extra energy for signal amplification. Different designs are employed in their implementation in optical signal routing on chip. The second part of chapter 2 reviews the graphene based optoelectronic devices, such as modulators, lasers, switches and detectors, potential for group IV optoelectronic integrated circuits (OEIC). In chapter 3, the highly efficient thermal optic control could act as on-chip switches and (transmittance) tunable filters. Local temperature tuning compensates the wavelength differences between two resonances, and separate electrode is used for fine tuning of optical pathways between two resonators. In frequency domain, the two cavity system also serves as an optical analogue of Autler-Towns splitting, where the cavity-cavity resonance detuning is controlled by the length of pathway (phase) between them. The high thermal sensitivity of cavity resonance also effectively reflects the heat distribution around the nanoheaters, and thus derives the thermal conductivity in the planar porous suspended silicon membrane. Chapter 4 & 5 analyze graphene-silicon photonic crystal cavities with high Q and small mode volume. With negligible nonlinear response to the milliwatt laser excitation, the monolithic silicon PhC turns into highly nonlinear after transferring the single layer graphene with

  14. Magnetometer Based on Optoelectronic Microwave Oscillator

    Science.gov (United States)

    Maleki, Lute; Strekalov, Dmitry; Matsko, Andrey

    2005-01-01

    proposed instrument, intended mainly for use as a magnetometer, would include an optoelectronic oscillator (OEO) stabilized by an atomic cell that could play the role of a magnetically tunable microwave filter. The microwave frequency would vary with the magnetic field in the cell, thereby providing an indication of the magnetic field. The proposed magnetometer would offer a combination of high accuracy and high sensitivity, characterized by flux densities of less than a picotesla. In comparison with prior magnetometers, the proposed magnetometer could, in principle, be constructed as a compact, lightweight instrument: It could fit into a package of about 10 by 10 by 10 cm and would have a mass <0.5 kg. As described in several prior NASA Tech Briefs articles, an OEO is a hybrid of photonic and electronic components that generates highly spectrally pure microwave radiation, and optical radiation modulated by the microwave radiation, through direct conversion between laser light and microwave radiation in an optoelectronic feedback loop. As used here, "atomic cell" signifies a cell containing a vapor, the constituent atoms of which can be made to undergo transitions between quantum states, denoted hyperfine levels, when excited by light in a suitable wavelength range. The laser light must be in this range. The energy difference between the hyperfine levels defines the microwave frequency. In the proposed instrument (see figure), light from a laser would be introduced into an electro-optical modulator (EOM). Amplitude-modulated light from the exit port of the EOM would pass through a fiber-optic splitter having two output branches. The light in one branch would be sent through an atomic cell to a photodiode. The light in the other branch would constitute the microwave-modulated optical output. Part of the light leaving the atomic cell could also be used to stabilize the laser at a frequency in the vicinity of the desired hyperfine or other quantum transition. The

  15. Mild conditions for deuteration of primary and secondary arylamines for the synthesis of deuterated optoelectronic organic molecules.

    Science.gov (United States)

    Krause-Heuer, Anwen M; Yepuri, Nageshwar R; Darwish, Tamim A; Holden, Peter J

    2014-11-13

    Deuterated arylamines demonstrate great potential for use in optoelectronic devices, but their widespread utility requires a method for large-scale synthesis. The incorporation of these deuterated materials into optoelectronic devices also provides the opportunity for studies of the functioning device using neutron reflectometry based on the difference in the scattering length density between protonated and deuterated compounds. Here we report mild deuteration conditions utilising standard laboratory glassware for the deuteration of: diphenylamine, N-phenylnaphthylamine, N-phenyl-o-phenylenediamine and 1-naphthylamine (via H/D exchange in D2O at 80 °C, catalysed by Pt/C and Pd/C). These conditions were not successful in the deuteration of triphenylamine or N,N-dimethylaniline, suggesting that these mild conditions are not suitable for the deuteration of tertiary arylamines, but are likely to be applicable for the deuteration of other primary and secondary arylamines. The deuterated arylamines can then be used for synthesis of larger organic molecules or polymers with optoelectronic applications.

  16. Mild Conditions for Deuteration of Primary and Secondary Arylamines for the Synthesis of Deuterated Optoelectronic Organic Molecules

    Directory of Open Access Journals (Sweden)

    Anwen M. Krause-Heuer

    2014-11-01

    Full Text Available Deuterated arylamines demonstrate great potential for use in optoelectronic devices, but their widespread utility requires a method for large-scale synthesis. The incorporation of these deuterated materials into optoelectronic devices also provides the opportunity for studies of the functioning device using neutron reflectometry based on the difference in the scattering length density between protonated and deuterated compounds. Here we report mild deuteration conditions utilising standard laboratory glassware for the deuteration of: diphenylamine, N-phenylnaphthylamine, N-phenyl-o-phenylenediamine and 1-naphthylamine (via H/D exchange in D2O at 80 °C, catalysed by Pt/C and Pd/C. These conditions were not successful in the deuteration of triphenylamine or N,N-dimethylaniline, suggesting that these mild conditions are not suitable for the deuteration of tertiary arylamines, but are likely to be applicable for the deuteration of other primary and secondary arylamines. The deuterated arylamines can then be used for synthesis of larger organic molecules or polymers with optoelectronic applications.

  17. Optoelectronic Infrastructure for RF/Optical Phased Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optoelectronic integrated holds the key to higher performance, reduced mass and radiation-hard space systems. A special need is increased flexibility of phased...

  18. Optoelectronic Infrastructure for RF/Optical Phased Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optoelectronic integrated circuits offer radiation-hard solutions for satellite systems with much improved SWPB (size, weight, power and bandwidth). The phased array...

  19. Thieno[3,4-b]thiophene-Based Novel Small-Molecule Optoelectronic Materials.

    Science.gov (United States)

    Zhang, Cheng; Zhu, Xiaozhang

    2017-06-20

    Because of the tailorable photoelectric properties derived from judicious molecular design and large-area and low-temperature processability especially on flexible substrates, design and synthesis of new organic π-functional materials is always a central topic in the field of organic optoelectronics, which siginificantly contributed to the development of high-performance optoelectronic devices such as organic photovoltaics (OPVs), organic field-effect transistors (OFETs), and organic light-emitting diodes (OLEDs). Compared with polymers, small molecules with well-defined molecular structures benefit the establishment of structure-property relationships, which may provide valuable guidelines for the design of new optoelectronic materials to further promote the device performance. New building blocks are essential for the construction of optoelectronic materials. As is well recognized, thiophene-based functional materials have played an indispensable role in the development of organic optoelectronics. Compared with six-membered benzene, five-membered thiophene shows weaker aromaticity and lower steric hindrance and may provide extra sulfur-sulfur interactions in solid state. Among various thiophene building blocks, thieno[3,4-b]thiophene (TbT) is an asymmetric fused bithiophene containing four functionalization positions, in which the proaromatic thiophene can effectively stabilize the quinoidal resonance of the aromatic thiophene. Thus, TbT exhibits a unique characteristic of quinoid-resonance effect that is powerful to modulate electronic structures. Although the application of TbT in polymer donor materials represented by PTB-7 has achieved a great success, its application in small-molecule optoelectronic materials is almost an untouched field. In this Account, we summerize the rational design of a series of TbT-based small-molecule optoelectronic materials designed and optimized by quinoid-resonance effect, regiochemistry, and side-chain engineering and

  20. Organic ferroelectric opto-electronic memories

    NARCIS (Netherlands)

    Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

    2011-01-01

    Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this ar

  1. Assessment of dental plaque by optoelectronic methods

    Science.gov (United States)

    Negrutiu, Meda-Lavinia; Sinescu, Cosmin; Bortun, Cristina Maria; Levai, Mihaela-Codrina; Topala, Florin Ionel; Crǎciunescu, Emanuela Lidia; Cojocariu, Andreea Codruta; Duma, Virgil Florin; Podoleanu, Adrian Gh.

    2016-03-01

    The formation of dental biofilm follows specific mechanisms of initial colonization on the surface, microcolony formation, development of organized three dimensional community structures, and detachment from the surface. The structure of the plaque biofilm might restrict the penetration of antimicrobial agents, while bacteria on a surface grow slowly and display a novel phenotype; the consequence of the latter is a reduced sensitivity to inhibitors. The aim of this study was to evaluate with different optoelectronic methods the morphological characteristics of the dental biofilm. The study was performed on samples from 25 patients aged between 18 and 35 years. The methods used in this study were Spectral Domain Optical Coherence Tomography (SD-OCT) working at 870 nm for in vivo evaluations and Scanning Electron Microscopy (SEM) for validations. For each patient a sample of dental biofilm was obtained directly from the vestibular surface of the teeth's. SD-OCT produced C- and B-scans that were used to generate three dimensional (3D) reconstructions of the sample. The results were compared with SEM evaluations. The biofilm network was dramatically destroyed after the professional dental cleaning. OCT noninvasive methods can act as a valuable tool for the 3D characterization of dental biofilms.

  2. Single carbon-nanotube photonics and optoelectronics

    Science.gov (United States)

    Kato, Yuichiro K.

    2015-03-01

    Single-walled carbon nanotubes have unique optical properties as a result of their one-dimensional structure. Not only do they exhibit strong polarization for both absorption and emission, large exciton binding energies allow for room-temperature excitonic luminescence. Furthermore, their emission is in the telecom-wavelengths and they can be directly synthesized on silicon substrates, providing new opportunities for nanoscale photonics and optoelectronics. Here we discuss the use of individual single-walled carbon nanotubes for generation, manipulation, and detection of light on a chip. Their emission properties can be controlled by coupling to silicon photonic structures such as photonic crystal microcavities and microdisk resonators. Simultaneous photoluminescence and photocurrent measurements show that excitons can dissociate spontaneously, enabling photodetection at low bias voltages despite the large binding energies. More recently, we have found that alternating gate-voltages can generate optical pulse trains from individual nanotubes. Ultimately, these results may be combined to achieve further control over photons at the nanoscale. Work supported by KAKENHI, The Canon Foundation, The Asahi Glass Foundation, and JSPS Open Partnership Joint Projects, as well as the Nanotechnology Platform and Photon Frontier Network Program of MEXT, Japan.

  3. Colloidal nanorod heterostructures for photovoltaics and optoelectronics

    Science.gov (United States)

    Shim, Moonsub

    2017-05-01

    Colloidal quantum dots (QDs) synthesized in versatile, easy-to-process solutions are opening up exciting prospects in multiple areas, especially in biomedical imaging, photovoltaics, solid-state lighting and displays. The success of most of these prospects relies on high-quality heterostructures that improve optical properties. In particular, the core/shell heterostructure with a type I straddling band offset has been indispensable but the applicability is often limited to those exploiting only photoluminescence. QDs and their heterostructures can also be made with anisotropic shapes that allow access to essentially an unlimited number of combinations of size, shape and composition. Structures that allow enhancement of optical properties and physical accessibility for carrier injection/extraction simultaneously can open up new and exciting prospects in photovoltaics and optoelectronics. This topical review focuses on nanorod-based colloidal semiconductor heterostructures. Two-component, type II staggered band offset nanorod heterostructures capable of efficiently separating photoinduced charges are first discussed. Double heterojunction nanorods that contain three different phases are then considered with respect to their novelty and potential as emissive materials in light-emitting diodes. We conclude with an outlook on the possibility of developing colloidal nanorods that contain epitaxial interfaces beyond the conventional semiconductor heterojunctions.

  4. Mapping and manipulating optoelectronic processes in emerging photovoltaic materials

    Science.gov (United States)

    Leblebici, Sibel Yontz

    The goal of the work in this dissertation is to understand and overcome the limiting optoelectronic processes in emerging second generation photovoltaic devices. There is an urgent need to mitigate global climate change by reducing greenhouse gas emissions. Renewable energy from photovoltaics has great potential to reduce emissions if the energy to manufacture the solar cell is much lower than the energy the solar cell generates. Two emerging thin film solar cell materials, organic semiconductors and hybrid organic-inorganic perovskites, meet this requirement because the active layers are processed at low temperatures, e.g. 150 °C. Other advantages of these two classes of materials include solution processability, composted of abundant materials, strongly light absorbing, highly tunable bandgaps, and low cost. Organic solar cells have evolved significantly from 1% efficient devices in 1989 to 11% efficient devices today. Although organic semiconductors are highly tunable and inexpensive, the main challenges to overcome are the large exciton binding energies and poor understanding of exciton dynamics. In my thesis, I optimized solar cells based on three new solution processable azadipyrromethene-based small molecules. I used the highest performing molecule to study the effect of increasing the permittivity of the material by incorporating a high permittivity small molecule into the active layer. The studies on two model systems, small donor molecules and a polymer-fullerene bulk heterojunction, show that Frenkel and charge transfer exciton binding energies can be manipulated by controlling permittivity, which impacts the solar cell efficiency. Hybrid organic-inorganic perovskite materials have similar advantages to organic semiconductors, but they are not excitonic, which is an added advantage for these materials. Although photovoltaics based on hybrid halide perovskite materials have exceeded 20% efficiency in only a few years of optimization, the loss mechanisms

  5. Advanced modelling of optoelectronic characteristics of OLEDs

    Energy Technology Data Exchange (ETDEWEB)

    Nitsche, Robert; Kurpiers-Guenther, Matthias [sim4tec GmbH, Schoenfelder Landstr. 8, 01328 Dresden (Germany); Thomschke, Michael; Schober, Matthias; Leo, Karl [Insitut fuer Angewandte Photophysik, TU Dresden, George-Baehr-Str. 1, 01069 Dresden (Germany)

    2008-07-01

    A rapid development of highly efficient OLED devices could be observed during the last years. The main work was carried out using experimental trial and error methods which are cost intensive and time consuming. A better approach is to conduct numerical simulations for device design and optimization beforehand, thus reducing the experimental work significantly and gaining a deep understanding of the underlying device physics. Here, we report on simulation results of multilayer single carrier devices and multilayer fluorescent and phosphorescent OLEDs including doped transport and emitter layers, using the integral OLED device simulator SimOLED. We first give an overview on optical and electrical modelling of OLEDs and discuss methodologies to obtain correct input parameters from fitting experimental results. Special focus is paid to the ambiguity of the extracted parameters to be used for further device modelling. The simulation results are compared to experimental data and conclusions are drawn concerning the distribution of electric field, recombination rates and exciton densities as well as charge carrier balance in the devices. Finally, we propose a generalized scheme for performing OLED simulations with predictive character.

  6. Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications

    Science.gov (United States)

    Mujeeb-U-Rahman, Muhammad; Scherer, Axel

    2016-12-01

    Microscale optical devices enabled by wireless power harvesting and telemetry facilitate manipulation and testing of localized biological environments (e.g., neural recording and stimulation, targeted delivery to cancer cells). Design of integrated microsystems utilizing optical power harvesting and telemetry will enable complex in vivo applications like actuating a single nerve, without the difficult requirement of extreme optical focusing or use of nanoparticles. Silicon-on-insulator (SOI)-based platforms provide a very powerful architecture for such miniaturized platforms as these can be used to fabricate both optoelectronic and microelectronic devices on the same substrate. Near-infrared biomedical optics can be effectively utilized for optical power harvesting to generate optimal results compared with other methods (e.g., RF and acoustic) at submillimeter size scales intended for such designs. We present design and integration techniques of optical power harvesting structures with complementary metal oxide semiconductor platforms using SOI technologies along with monolithically integrated electronics. Such platforms can become the basis of optoelectronic biomedical systems including implants and lab-on-chip systems.

  7. Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

    Science.gov (United States)

    Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

    2017-12-01

    The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

  8. Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells

    Science.gov (United States)

    Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

    2017-01-01

    The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

  9. Thickness, morphology, and optoelectronic characteristics of pristine and surfactant-modified DNA thin films

    Science.gov (United States)

    Arasu, Velu; Reddy Dugasani, Sreekantha; Son, Junyoung; Gnapareddy, Bramaramba; Jeon, Sohee; Jeong, Jun-Ho; Park, Sung Ha

    2017-10-01

    Although the preparation of DNA thin films with well-defined thicknesses controlled by simple physical parameters is crucial for constructing efficient, stable, and reliable DNA-based optoelectronic devices and sensors, it has not been comprehensively studied yet. Here, we construct DNA and surfactant-modified DNA thin films by drop-casting and spin-coating techniques. The DNA thin films formed with different control parameters, such as drop-volume and spin-speed at given DNA concentrations, exhibit characteristic thickness, surface roughness, surface potential, and absorbance, which are measured by a field emission scanning electron microscope, a surface profilometer, an ellipsometer, an atomic force microscope, a Kelvin probe force microscope, and an UV–visible spectroscope. From the observations, we realized that thickness significantly affects the physical properties of DNA thin films. This comprehensive study of thickness-dependent characteristics of DNA and surfactant-modified DNA thin films provides insight into the choice of fabrication techniques in order for the DNA thin films to have desired physical characteristics in further applications, such as optoelectronic devices and sensors.

  10. Electronic and Optoelectronic Properties of Semiconductor Structures

    Science.gov (United States)

    Singh, Jasprit

    2003-02-01

    Jasprit Singh presents the underlying physics behind devices that drive today's technologies utilizing carefully chosen solved examples to convey important concepts. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. The volume provides engineering and physics students and professionals with complete coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures is available for instructors, from solutions@cambridge.org.

  11. Tunable Interface Non-linear Electron Transport in Semiconductor Nanowire Heterostructure and Its Application in Optoelectronics

    Science.gov (United States)

    Chen, Guannan

    Understanding the effects of finite size and dimensionality on the interaction of light with nanoscale semiconductor heterostructure is central to identifying and exploiting novel modes in optoelectronic devices. In type-I heterostructured core-shell GaAs/AlxGa1-xAs nanowires, the real space transfer (RST) of photogenerated hot electrons across the interface from the GaAs core to the AlxGa1-xAs shell forms the basis of a new family of optoelectronic devices by a carefully designed and optimized nanofabrication process. Due to the large mobility difference, we observed negative differential resistance (NDR) on single nanowire devices. External modulation of the transfer rates, manifested as a large tunability of the voltage onset of NDR, is achieved using three different modes: electrostatic gating, incident photon flux, and photon energy. In this dissertation, the physics of coupling of external control to transfer rate was investigated. The combined influences of geometric confinement, heterojunction shape and carrier scattering on hot-electron transfer is discussed. Temperature-dependent transport study under monochromatic tunable laser illumination reveals an ultrafast carrier dynamics related to RST of excess carriers, which provides an insight into hot carrier cooling. Device element showing adjustable phase shift and frequency doubling of ac modulation is demonstrated. For a full understanding, Carrier transport properties are probed through electron beam induced current, which is capable of imaging sub-surface feature in excess carrier transport. Along with simulation of injected electron trajectories, selective probing of core and shell by tuning electron beam energies reveals axial and bias dependent transport along parallel channels. The drift and diffusion component of the excess carrier current is deconvoluted from a coupled decay length, from which lower than bulk shell electron mobility is extracted. A precise knowledge of band edge discontinuities at

  12. Hybrid silicon evanescent devices

    Directory of Open Access Journals (Sweden)

    Alexander W. Fang

    2007-07-01

    Full Text Available Si photonics as an integration platform has recently been a focus of optoelectronics research because of the promise of low-cost manufacturing based on the ubiquitous electronics fabrication infrastructure. The key challenge for Si photonic systems is the realization of compact, electrically driven optical gain elements. We review our recent developments in hybrid Si evanescent devices. We have demonstrated electrically pumped lasers, amplifiers, and photodetectors that can provide a low-cost, scalable solution for hybrid integration on a Si platform by using a novel hybrid waveguide architecture, consisting of III-V quantum wells bonded to Si waveguides.

  13. Optoelectronic multiplexer for digital data processing based on lipid crystal pixels and optical fiber elements

    Science.gov (United States)

    Pérez, I.; Pena, J. M. S.; Torres, J. C.; Manzanares, R.; Marcos, C.; Vázquez, C.

    2007-06-01

    In this work, we present an optoelectronic digital multiplexer 4:1 based on a multipixel nematic liquid crystal cell. This device uses two optical control signals to select one among four possible optical data inputs. These data signals are generated by four red LEDs, which are guided through plastic optical fiber towards liquid crystal pixels. For our purpose, only four pixels of the cell will be used to modulate the optical signal across them. Each pixel will be addressed by a square waveform coming from the conditioning circuit managed by a microcontroller system. The electronic control allows the multiplexer to work as as simple two input logical gates such as AND, NAND, OR, NOR, XOR and XNOR. The operation time of the device is limited by the response time of LC cell that is in the millisecond range.

  14. Optoelectronic and Photovoltaic Properties of the Air-Stable Organohalide Semiconductor (CH 3 NH 3 ) 3 Bi 2 I 9

    KAUST Repository

    Abulikemu, Mutalifu

    2016-07-14

    Lead halide perovskite materials have shown excellent optoelectronic as well as photovoltaic properties. However, the presence of lead and the chemical instability relegate lead halide perovskites to research applications only. Here, we investigate an emerging lead-free and air stable compound (CH3NH3)3Bi2I9 as a non-toxic potential alternative to lead halide perovskites. We have synthesized thin films, powders and millimeter-scale single crystals of (CH3NH3)3Bi2I9 and investigated their structural and optoelectronic properties. We demonstrate that the degree of crystallinity strongly affects the optoelectronic properties of the material, resulting in significantly different band gaps in polycrystalline thin films and single crystals. Surface photovoltage spectroscopy reveals outstanding photocharge generation in the visible (<700 nm), while transient absorption spectroscopy and space charge limited current measurements point to a long exciton lifetime and a high carrier mobility, respectively, similar to lead halide perovskites, pointing to the remarkable potential of this semiconductor. Photovoltaic devices fabricated using this material yield low power conversion efficiency (PCE) to date, but the PCE is expected to rise with improvements in thin film processing and device engineering.

  15. Structural and Optoelectronic Properties of X3ZN (X = Ca, Sr, Ba; Z = As, Sb, Bi) Anti-Perovskite Compounds

    Science.gov (United States)

    Ullah, Imran; Murtaza, G.; Khenata, R.; Mahmood, Asif; Muzzamil, M.; Amin, N.; Saleh, M.

    2016-06-01

    We employed first-principles calculations to predict the structural and optoelectronic properties of X3ZN (X = Ca, Sr, Ba; Z = As, Sb, Bi) anti-perovskite compounds using an all-electron full-potential linearized augmented plane-wave method. Optimized structural parameters are found to be in good agreement with the available experimental measurements. The electronic band structure is calculated using different exchange-correlation potentials which reveal that the investigated compounds are narrow direct band gap semiconductors. A direct narrow band gap at the center of the Brillouin zone emphasises the optical activity of these compounds. Prediction of the optical properties, such as the real and imaginary parts of the dielectric function and refractive index along with reflectivity and optical conductivity, reveals the importance of these compounds in the visible and near UV optoelectronic devices industry.

  16. Preparation, characterization and optoelectronic properties of nanodiamonds doped zinc oxide nanomaterials by a ball milling technique

    Science.gov (United States)

    Ullah, Hameed; Sohail, Muhammad; Malik, Uzma; Ali, Naveed; Bangash, Masroor Ahmad; Nawaz, Mohsan

    2016-07-01

    Zinc oxide (ZnO) is one of the very important metal oxides (MOs) for applications in optoelectronic devices which work in the blue and UV regions. However, to meet the challenges of obtaining ZnO nanomaterials suitable for practical applications, various modifications in physico-chemical properties are highly desirable. One of the ways adopted for altering the properties is to synthesize composite(s) of ZnO with various reinforcements. Here we report on the tuning of optoelectronic properties of ZnO upon doping by nanodiamonds (NDs) using the ball milling technique. A varying weight percent (wt.%) of NDs were ball milled for 2 h with ZnO nanoparticles prepared by a simple precipitation method. The effects of different parameters, the calcination temperature of ZnO, wt.% of NDs and mechanical milling upon the optoelectronic properties of the resulting ZnO-NDs nanocomposites have been investigated. The ZnO-NDs nanocomposites were characterized by IR spectroscopy, powder x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The UV-vis spectroscopy revealed the alteration in the bandgap energy (Eg ) of ZnO as a function of the calcination temperature of ZnO, changing the concentration of NDs, and mechanical milling of the resulting nanocomposites. The photoluminescence (PL) spectroscopy showed a decrease in the deep level emission (DLE) peaks and an increase in near-band-edge transition peaks as a result of the increasing concentration of NDs. The decrease in DLE and increase in band to band transition peaks were due to the strong interaction between the NDs and the Zn+; consequently, the Zn+ concentration decreased on the interstitial sites.

  17. Handbook of compound semiconductors growth, processing, characterization, and devices

    CERN Document Server

    Holloway, Paul H

    1996-01-01

    This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

  18. Flexible manufacturing for photonics device assembly

    Science.gov (United States)

    Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David

    1994-01-01

    The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

  19. Nano-Optoelectronic Integration on Silicon

    Science.gov (United States)

    2012-12-14

    Gustafsson, L. R. Wallenberg, and L. Samuelson , “Epitaxial III−V Nanowires on Silicon,” Nano Letters, vol. 4, no. 10, pp. 1987–1990, Oct. 2004...Transactions on Electron Devices, vol. 47, no. 12, pp. 2320 – 2325, Dec. 2000. 108 [48] T. Bryllert, L.-E. Wernersson, L. E. Froberg, and L. Samuelson

  20. Optoelectronic implementation of multilayer perceptron and Hopfield neural networks

    Science.gov (United States)

    Domanski, Andrzej W.; Olszewski, Mikolaj K.; Wolinski, Tomasz R.

    2004-11-01

    In this paper we present an optoelectronic implementation of two networks based on multilayer perceptron and the Hopfield neural network. We propose two different methods to solve a problem of lack of negative optical signals that are necessary for connections between layers of perceptron as well as within the Hopfield network structure. The first method applied for construction of multilayer perceptron was based on division of signals into two channels and next to use both of them independently as positive and negative signals. The second one, applied for implementation of the Hopfield model, was based on adding of constant value for elements of matrix weight. Both methods of compensation of lack negative optical signals were tested experimentally as optoelectronic models of multilayer perceptron and Hopfield neural network. Special configurations of optical fiber cables and liquid crystal multicell plates were used. In conclusion, possible applications of the optoelectronic neural networks are briefly discussed.

  1. History of modern optics ad optoelectronics development in China

    CERN Document Server

    Tian, Shouyun

    2014-01-01

    This book presents a collection of memoir papers on the development of modern and contemporary optics and optoelectronics in China from the 18th to 20th centuries. The papers were written by famous scientists in China, including members of the Chinese Academy of Sciences and the Chinese Academy of Engineering, sharing their experience in different fields of optics and optoelectronics development. This is a unique book in understanding the natural science history of optics and optoelectronics. It gives you the general idea about how the western optical science spread to China in the 17th to 18th century; the cradle of the contemporary optics in China; Birth, development and application of lasers in China; high energy and high power lasers for laser antiballistic missile and laser nuclear fusion; development of Chinese optical communication and optical information storage; laser and infrared optics research for space science; development of Chinese optical instruments, etc.

  2. Practical opto-electronics an illustrated guide for the laboratory

    CERN Document Server

    Protopopov, Vladimir

    2014-01-01

    This book explains how to create opto-electronic systems in a most efficient way, avoiding typical mistakes. It covers light detection techniques, imaging, interferometry, spectroscopy, modulation-demodulation, heterodyning, beam steering, and many other topics common to laboratory applications. The focus is made on self-explanatory figures rather than on words. The book guides the reader through the entire process of creating problem-specific opto-electronic systems, starting from optical source, through beam transportation optical arrangement, to photodetector and data acquisition system. The relevant basics of beam propagation and computer-based raytracing routines are also explained, and sample codes are listed. the book teaches important know-how and practical tricks that are never disclosed in scientific publications.  The book can become the reader's personal adviser in the world of opto-electronics and navigator in the ocean of the market of optical components and systems. Succinct, well-illustrate...

  3. Research on optical multistage butterfly interconnection and optoelectronic logic operations

    Science.gov (United States)

    Sun, De-Gui; Wang, Na-Xin; He, Li-Ming; Xu, Mai; Liang, Guo-Dong; Zheng, Jie

    We briefly study butterfly interconnection construction and propose an experimental approach to implementing multistage butterfly interconnection networks by using a special interconnection grating with the reflection ladder structure and liquid crystal light valves (LCLVs), and implementing the optical butterfly interconnections and primary optical digital logic operations. With this foundation, we analyse and discuss the features of the approach by computer simulations. In terms of our theoretical analyses, we improve the ring-circuit approach, based on the reflection ladder structure gratings, into a more suitable form based on transmission gratings, and we substitute the LCLVs with optoelectronic switches. Finally we give the experimental results of both the transmission grating and optoelectronic switches.

  4. Magnetic and optoelectronic properties of gold nanocluster-thiophene assembly.

    Science.gov (United States)

    Qin, Wei; Lohrman, Jessica; Ren, Shenqiang

    2014-07-07

    Nanohybrids consisting of Au nanocluster and polythiophene nanowire assemblies exhibit unique thermal-responsive optical behaviors and charge-transfer controlled magnetic and optoelectronic properties. The ultrasmall Au nanocluster enhanced photoabsorption and conductivity effectively improves the photocurrent of nanohybrid based photovoltaics, leading to an increase of power conversion efficiency by 14 % under AM 1.5 illumination. In addition, nanohybrids exhibit electric field controlled spin resonance and magnetic field sensing behaviors, which open up the potential of charge-transfer complex system where the magnetism and optoelectronics interact.

  5. A reconfigurable optoelectronic interconnect technology for multi-processor networks

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.C.; Cheng, J. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Zolper, J.C.; Klem, J. [Sandia National Labs., Albuquerque, NM (United States)

    1995-05-01

    This paper describes a new optical interconnect architecture and the integrated optoelectronic circuit technology for implementing a parallel, reconfigurable, multiprocessor network. The technology consists of monolithic array`s of optoelectronic switches that integrate vertical-cavity surface-emitting lasers with three-terminal heterojunction phototransistors, which effectively combined the functions of an optical transceiver and an optical spatial routing switch. These switches have demonstrated optical switching at 200 Mb/s, and electrical-to-optical data conversion at > 500 Mb/s, with a small-signal electrical-to-optical modulation bandwidth of {approximately} 4 GHz.

  6. Imaging electric field dynamics with graphene optoelectronics

    Science.gov (United States)

    Horng, Jason; Balch, Halleh B.; McGuire, Allister F.; Tsai, Hsin-Zon; Forrester, Patrick R.; Crommie, Michael F.; Cui, Bianxiao; Wang, Feng

    2016-12-01

    The use of electric fields for signalling and control in liquids is widespread, spanning bioelectric activity in cells to electrical manipulation of microstructures in lab-on-a-chip devices. However, an appropriate tool to resolve the spatio-temporal distribution of electric fields over a large dynamic range has yet to be developed. Here we present a label-free method to image local electric fields in real time and under ambient conditions. Our technique combines the unique gate-variable optical transitions of graphene with a critically coupled planar waveguide platform that enables highly sensitive detection of local electric fields with a voltage sensitivity of a few microvolts, a spatial resolution of tens of micrometres and a frequency response over tens of kilohertz. Our imaging platform enables parallel detection of electric fields over a large field of view and can be tailored to broad applications spanning lab-on-a-chip device engineering to analysis of bioelectric phenomena.

  7. Application of SOI materials in optoelectronics%SOI材料在光电子学中的应用

    Institute of Scientific and Technical Information of China (English)

    陈媛媛; 杨笛

    2012-01-01

    SOI (silicon-on-insulater) material is an important kind of optical waveguide materials for silicon-based optoelectronics applications. In recent years, with the maturation of facture and manufacture technology of SOI material, the research on SOI-based optical waveguide devices have attracted more and more attentions. In this paper,the specific application of SOI material in silicon-based optoelectronics are introduced, including the recent developments in thermo-optic devices,electro-optic devices,optical coupler which connects sub-micron optical waveguide and fiber,integrated optoelectronic chip etc. Smaller waveguide cross-section is the developing direction of SOI-based optical waveguide devices in the future.%SOI材料是应用于硅基光电子学中的一种重要的光波导材料.近年来随着SOI材料制备和加工技术的成熟,SOI基光波导器件的研究日益受到人们的重视.文章介绍了SOI材料在光电子学领域的一些具体应用,包括了在热光器件、电光器件、亚微米波导器件与光纤的耦合器以及光电子集成芯片等方面的最新研究进展.更小的波导截面尺寸是未来SOI光波导器件发展的必然趋势.

  8. Simulation and Numerical Modeling of the Self-assembly of an Optoelectronic Peptide

    Science.gov (United States)

    Mansbach, Rachael; Ferguson, Andrew

    We report molecular dynamics simulations of the self-assembly of synthetic π-conjugated oligopeptides into optoelectronic nanostructures. The electronic properties provide the basis for an array of organic electronic devices, such as light-emitting diodes, field-effect transistors, and solar cells. Control of the structure, stability, and kinetics of self-assembled organic electronics by tuning monomer chemistry and environmental conditions presents a powerful route to the fabrication of biocompatible ``designer materials.'' We have performed coarse-grained simulations of the self-assembly of several hundred peptides over microsecond time scales to probe the morphology and kinetics of aggregation with molecular-level detail. We have subsequently used this simulation data to parameterize a kinetic aggregation model based on Smoluchowski coagulation theory to enable prediction of aggregation dynamics on millisecond time scales. These numerical models are now being integrated into a multi-physics model of peptide aggregation in a microfluidic flow cell developed by our experimental collaborators to model the self-assembly of diverse peptide architectures under tailored flow-fields for the fabrication of biocompatible assemblies with defined morphology and optoelectronic function.

  9. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics

    Science.gov (United States)

    Zhuang, Q. D.; Alradhi, H.; Jin, Z. M.; Chen, X. R.; Shao, J.; Chen, X.; Sanchez, Ana M.; Cao, Y. C.; Liu, J. Y.; Yates, P.; Durose, K.; Jin, C. J.

    2017-03-01

    InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

  10. Effect of annealing on structural and optoelectronic properties of nanostructured ZnSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ashraf, M.; Akhtar, S.M.J. [Optics Laboratories, P.O. Box 1021, Islamabad (Pakistan); Khan, A.F. [Pakistan Institute of Engineering and Applied Sciences (PIEAS), Islamabad (Pakistan); Ali, Z. [Optics Laboratories, P.O. Box 1021, Islamabad (Pakistan); Qayyum, A., E-mail: qayyum@pinstech.org.pk [Physics Division, Pakistan Institute of Nuclear Science and Technology, P.O. Nilore, Islamabad (Pakistan)

    2011-02-03

    Research highlights: > Prepared good quality ZnSe films by commercially viable deposition technique. > ZnSe films were thoroughly characterized by several techniques. > It is shown that by simply annealing one can regulate several structural, optical and electrical properties of ZnSe film. > The reported results are useful for the designing of optoelectronic devices, optical coatings for infrared applications and window layer of the solar cells. - Abstract: Thin films of ZnSe were deposited on soda lime glass substrates by thermal evaporation and annealed in vacuum at various temperatures in the range of 100-300 {sup o}C. Structural and optoelectronic properties of these films were investigated and compared with the available data. XRD studies revealed that as-deposited films were polycrystalline in nature with cubic structure. It was further observed that the grain size and crystallinity increased, whereas dislocations and strains decreased with the increase of annealing temperature. The optical energy band gap estimated from the transmittance data was in the range of 2.60-2.67 eV. The observed increase in band gap energy with annealing temperature may be due to the quantum confinement effects. Similarly, refractive index of the films was found to increase with the annealing temperature. The AFM images revealed that films were uniform and pinhole free. The RMS roughness of the films increased from 1.5 nm to 2.5 nm with the increase of annealing temperature. Resistivity of the films decreased linearly with the increase of temperature.

  11. Parallel optical interconnects - Implementation of optoelectronics in multiprocessor architectures

    Science.gov (United States)

    Frietman, E. E. E.; Dekker, L.; van Nifterick, W.; Jongeling, T. J. M.

    1990-03-01

    Optoelectronic logic element circuitries are described which can be used for the implementation of a wide variety of interconnection schemes. Particular attention is given to the design, construction, and application of an electrooptic communication system (EOCS) using dedicated free space multiple data distributors and integrated optically writable input buffer arrays with fully parallel access. Some experimental results obtained on the complete EOCS are presented.

  12. Opto-electronic properties of charged conjugated molecules

    NARCIS (Netherlands)

    Fratiloiu, S.

    2007-01-01

    The aim of this thesis is to provide fundamental insight into the nature and opto-electronic properties of charge carriers on conjugated oligomers and polymers. Electronic structure, optical absorption properties and distribution of charge carriers along the chains of different conjugated materials

  13. Advances in wide bandgap SiC for optoelectronics

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    2014-01-01

    Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

  14. Optoelectronic Correlator Architecture for Shift Invariant Target Recognition

    CERN Document Server

    Monjur, Mehjabin S; Tripathi, Renu; Donoghue, John; Shahriar, M S

    2013-01-01

    In this paper, we present theoretical details and the underlying architecture of a hybrid optoelectronic correlator that correlates images using SLMs, detectors and VLSI chips. The proposed architecture bypasses the nonlinear material such as photorefractive polymer film by using detectors instead, and the phase information is yet conserved by the interference of plane waves with the images.

  15. Intersatellite communications optoelectronics research at the Goddard Space Flight Center

    Science.gov (United States)

    Krainak, Michael A.

    1992-01-01

    A review is presented of current optoelectronics research and development at the NASA Goddard Space Flight Center for high-power, high-bandwidth laser transmitters; high-bandwidth, high-sensitivity optical receivers; pointing, acquisition, and tracking components; and experimental and theoretical system modeling at the NASA Goddard Space Flight Center. Program hardware and space flight opportunities are presented.

  16. Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires.

    Science.gov (United States)

    Léonard, François; Song, Erdong; Li, Qiming; Swartzentruber, Brian; Martinez, Julio A; Wang, George T

    2015-12-01

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

  17. Magnetometer Based on the Opto-Electronic Oscillator

    Science.gov (United States)

    Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

    2005-01-01

    We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

  18. Stabilizing an optoelectronic microwave oscillator with photonic filters

    Science.gov (United States)

    Strekalov, D.; Aveline, D.; Yu, N.; Thompson, R.; Matsko, A. B.; Maleki, L.

    2003-01-01

    This paper compares methods of active stabilization of an optoelectronic microwave oscillator (OEO) based on insertion of a source of optical group delay into an OEO loop. The performance of an OEO stabilized with either a high- optical cavity or an atomic cell is analyzed. We show that the elements play a role of narrow-band microwave filters improving an OEO stability.

  19. Microscopic optoelectronic defectoscopy of solar cells

    Directory of Open Access Journals (Sweden)

    Dallaeva D.

    2013-05-01

    Full Text Available Scanning probe microscopes are powerful tool for micro- or nanoscale diagnostics of defects in crystalline silicon solar cells. Solar cell is a large p-n junction semiconductor device. Its quality is strongly damaged by the presence of defects. If the cell works under low reverse-biased voltage, defects emit a light in visible range. The suggested method combines three different measurements: electric noise measurement, local topography and near-field optical beam induced current and thus provides more complex information. To prove its feasibility, we have selected one defect (truncated pyramid in the sample, which emitted light under low reverse-biased voltage.

  20. Models of organometallic complexes for optoelectronic applications

    CERN Document Server

    Jacko, A C; Powell, B J

    2010-01-01

    Organometallic complexes have potential applications as the optically active components of organic light emitting diodes (OLEDs) and organic photovoltaics (OPV). Development of more effective complexes may be aided by understanding their excited state properties. Here we discuss two key theoretical approaches to investigate these complexes: first principles atomistic models and effective Hamiltonian models. We review applications of these methods, such as, determining the nature of the emitting state, predicting the fraction of injected charges that form triplet excitations, and explaining the sensitivity of device performance to small changes in the molecular structure of the organometallic complexes.

  1. Photodetectors based on heterostructures for optoelectronic applications

    Science.gov (United States)

    Nabet, Bahram; Cola, Adriano; Cataldo, Andrea; Chen, Xiying; Quaranta, Fabio

    2002-09-01

    In this work we describe a family of optical devices based on heterojunction and heterodimensional structures and we investigate their static and dynamic properties. Such devices are good candidates, due to their high performance, for utilization as the sensing element for the realization of sensors in the fields of telecommunications, remote sensing, LIDAR and medical imaging. First, we present a Heterostructure Metal-Semiconductor-Metal (HMSM) photodetectors that employ a uniformly doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of the photogenerated electrons. In this first family of devices, two doping levels are compared showing the direct effect of the aiding field due to modulation doping. Subsequently, we analyze a novel Resonant-Cavity-Enhanced (RCE) HMSM photodetector in which a Distributed Bragg Reflector (DBR) is employed in order to reduce the thickness of the absorption layer thus achieving good responsivity and high speed as well as wavelength selectivity. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and on-wafer frequency domain measurements point out the better performance of this last family of detectors, as they can operate in tens of Giga-Hertz range with low dark current and high responsivity. Particularly, the I-V curves show a very low dark current (around 10 picoamps at operative biases); C-V measurements highlight the low geometrical capacitance values; the photocurrent spectrum shows a clear peak at 850 nm wavelength, while time response measurements give a 3 dB bandwidth of about 30 GHz. Small signal model based on frequency domain data is also extracted in order to facilitate future photoreceiver design. Furthermore, two-dimensional numerical simulations have been carried out in order to predict the electrical properties of these detectors. Combination of very low dark current and

  2. Graphene based flexible electrochromic devices.

    Science.gov (United States)

    Polat, Emre O; Balcı, Osman; Kocabas, Coskun

    2014-10-01

    Graphene emerges as a viable material for optoelectronics because of its broad optical response and gate-tunable properties. For practical applications, however, single layer graphene has performance limits due to its small optical absorption defined by fundamental constants. Here, we demonstrated a new class of flexible electrochromic devices using multilayer graphene (MLG) which simultaneously offers all key requirements for practical applications; high-contrast optical modulation over a broad spectrum, good electrical conductivity and mechanical flexibility. Our method relies on electro-modulation of interband transition of MLG via intercalation of ions into the graphene layers. The electrical and optical characterizations reveal the key features of the intercalation process which yields broadband optical modulation up to 55 per cent in the visible and near-infrared. We illustrate the promises of the method by fabricating reflective/transmissive electrochromic devices and multi-pixel display devices. Simplicity of the device architecture and its compatibility with the roll-to-roll fabrication processes, would find wide range of applications including smart windows and display devices. We anticipate that this work provides a significant step in realization of graphene based optoelectronics.

  3. An exploration of deep level defects in compound semiconductors using optoelectronic modulation spectroscopy

    CERN Document Server

    Chiu, C H

    2001-01-01

    The work is concerned with the detection and characterisation of defect states within semiconductor materials. OptoElectronic Modulation Spectroscopy (OEMS) has been adapted to isolate the electrical and optical responses of traps in semiconductor device and materials. Sub band-gap photons are used to permit penetration into the semiconductor to excite charges in deep defect states. In order to isolate the effect of back-plane charge traps in MESFET structures gate depletion region modulation of the channel current has been eliminated by using a closed loop control system to stabilise the gate depletion capacitance continuously throughout the measurement of the OEMS spectrum. Any change of the channel current will then be due only to the charges within the back-plane interface depletion region between the active layer and buffer/substrate. Depth defined OEMS has also been demonstrated and used to detect defects situated between two preset gate depletion regions. The location of the defect states is therefore ...

  4. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

    Directory of Open Access Journals (Sweden)

    Nen-Wen Pu

    2015-09-01

    Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  5. Growth and structural characterisation of Si/SiGe heterostructures for optoelectronic applications

    Science.gov (United States)

    Li, X. B.; Neave, J. H.; Norris, D. J.; Cullis, A. G.; Paul, D. J.; Kelsall, R. W.; Zhang, J.

    2005-02-01

    The availability of compliant substrates has opened new avenues to exploit SiGe materials for optoelectronic applications. In this paper, relevant issues including fabrication of compliant substrates through compositionally graded buffer layers, strain (stress) balance in active layer design and X-ray characterisation are discussed. Quantum cascade structures designed for light emitting devices at THz range are grown using a combination of low pressure chemical vapour deposition and gas source molecular beam epitaxy in a single growth system. The results of structural characterisation by X-ray diffraction and transmission electron microscopy show that by following stringent design criteria, active layer structures more than 4 μm thick with low threading dislocation density can be achieved. Electroluminance in the THz frequency range have been observed from these structures.

  6. Ab initio Description of Optoelectronic Properties at Defective Interfaces in Solar Cells

    CERN Document Server

    Czaja, Philippe; Giusepponi, Simone; Gusso, Michele; Aeberhard, Urs

    2016-01-01

    In order to optimize the optoelectronic properties of novel solar cell architectures, such as the amorphous-crystalline interface in silicon heterojunction devices, we calculate and analyze the local microscopic structure at this interface and in bulk a-Si:H, in particular with respect to the impact of material inhomogeneities. The microscopic information is used to extract macroscopic material properties, and to identify localized defect states, which govern the recombination properties encoded in quantities such as capture cross sections used in the Shockley-Read-Hall theory. To this end, atomic configurations for a-Si:H and a-Si:H/c-Si interfaces are generated using molecular dynamics. Density functional theory calculations are then applied to these configurations in order to obtain the electronic wave functions. These are analyzed and characterized with respect to their localization and their contribution to the (local) density of states. GW calculations are performed for the a-Si:H configuration in order...

  7. Waterproof AlInGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics

    Science.gov (United States)

    Kim, Rak-Hwan; Kim, Dae-Hyeong; Xiao, Jianliang; Kim, Bong Hoon; Park, Sang-Il; Panilaitis, Bruce; Ghaffari, Roozbeh; Yao, Jimin; Li, Ming; Liu, Zhuangjian; Malyarchuk, Viktor; Kim, Dae Gon; Le, An-Phong; Nuzzo, Ralph G.; Kaplan, David L.; Omenetto, Fiorenzo G.; Huang, Yonggang; Kang, Zhan; Rogers, John A.

    2010-11-01

    Inorganic light-emitting diodes and photodetectors represent important, established technologies for solid-state lighting, digital imaging and many other applications. Eliminating mechanical and geometrical design constraints imposed by the supporting semiconductor wafers can enable alternative uses in areas such as biomedicine and robotics. Here we describe systems that consist of arrays of interconnected, ultrathin inorganic light-emitting diodes and photodetectors configured in mechanically optimized layouts on unusual substrates. Light-emitting sutures, implantable sheets and illuminated plasmonic crystals that are compatible with complete immersion in biofluids illustrate the suitability of these technologies for use in biomedicine. Waterproof optical-proximity-sensor tapes capable of conformal integration on curved surfaces of gloves and thin, refractive-index monitors wrapped on tubing for intravenous delivery systems demonstrate possibilities in robotics and clinical medicine. These and related systems may create important, unconventional opportunities for optoelectronic devices.

  8. Structural and Optoelectronic Properties of Cubic CsPbF3 for Novel Applications

    Institute of Scientific and Technical Information of China (English)

    G. Murtaza; Iftikhar Ahmad; M. Maqbool; H. A. Rahnamaye Aliabad; A. Afaq

    2011-01-01

    Chemical bonding as well as structural, electronic and optical properties of CsPbF3 are calculated using the highly accurate full potential linearized augmented plane-wave method within the framework of density functional theory (DFT). The calculated lattice constant is found to be in good agreement with the experimental results. The electron density plots reveal strong ionic bonding in Cs-F and strong covalent bonding in Pb-F. The calculations show that the material is a direct and wide bandgap semiconductor with a fundamental gap at the R-symmetry point. Optical properties such as the real and imaginary parts of the dielectric function, refractive index, extinction coefficient, reflectivity, optical conductivity and absorption coefficient are also calculated. Based on the calculated wide and direct bandgap, as well as other optical properties of the compound, it is predicted that CsPbF3 is suitable for optoelectronic devices and anti-reflecting coatings.%Chemical bonding as well as structural,electronic and optical properties of CsPbF3 are calculated using the highly accurate full potential linearized augmented plane-wave method within the framework of density functional theory (DFT).The calculated lattice constant is found to be in good agreement with the experimental results.The electron density plots reveal strong ionic bonding in Cs-F and strong covalent bonding in Pb-F.The calculations show that the material is a direct and wide bandgap semiconductor with a fundamental gap at the R-symmetry point.Optical properties such as the real and imaginary parts of the dielectric function,refractive index,extinction coefficient,reflectivity,optical conductivity and absorption coefficient are also calculated.Based on the calculated wide and direct bandgap,as well as other optical properties of the compound,it is predicted that CsPbF3 is suitable for optoelectronic devices and anti-reflecting coatings.Perovskites have gained high technological and fundamental importance

  9. Novel Electrical and Optoelectronic Characterization Methods for Semiconducting Nanowires and Nanotubes

    Science.gov (United States)

    Katzenmeyer, Aaron Michael

    As technology journalist David Pogue recounted, "If everything we own had improved over the last 25 years as much as electronics have, the average family car would travel four times faster than the space shuttle; houses would cost 200 bucks." The electronics industry is one which, through Moore's Law, created a self-fulfilling prophecy of exponential advancement. This progress has made unforeseen technologies commonplace and revealed new physical understanding of the world in which we live. It is in keeping with these trends that the current work is motivated. This dissertation focuses on the advancement of electrical and optoelectronic characterization techniques suitable for understanding the underlying physics and applications of nanoscopic devices, in particular semiconducting nanowires and nanotubes. In this work an in situ measurement platform based on a field-emission scanning electron microscope fitted with an electrical nanoprobe is shown to be a robust instrument for determining fundamental aspects of nanowire systems (i.e. the dominant mode of carrier transport and the nature of the electrical contacts to the nanowire). The platform is used to fully classify two distinct systems. In one instance it is found that indium arsenide nanowires display space-charge-limited transport and are contacted Ohmically. In the other, gallium arsenide nanowires are found to sequentially show the trap-mediated transport regimes of Poole-Frenkel effect and phonon-assisted tunneling. The contacts in this system are resolved to be asymmetric -- one is Ohmic while the other is a Schottky barrier. Additionally scanning photocurrent microscopy is used to spatially resolve optoelectronic nanowire and nanotube devices. In core/shell gallium arsenide nanowire solar cell arrays it is shown that each individual nanowire functions as a standalone solar cell. Nanotube photodiodes are mapped by scanning photocurrent microscopy to confirm an optimal current collection scheme has been

  10. Optoelectronic biosensor for remote monitoring of toxins

    Science.gov (United States)

    Knopf, George K.; Bassi, Amarjeet S.; Singh, Shikha; Fiorilli, Mina; Jauda, Lilana

    2001-02-01

    12 A biosensor telemetry system for the on-line remote monitoring of toxic sites is described in this paper. The device is a self-contained field measurement system that employs immobilized luminescent. Vibrio fisheri bacteria to detect airborne contaminants. The presence of toxic chemicals in the air will lead to a measurable decrease in the intensity of light produced by the bacteria population. Both cellular and environmental factors control the level of bioluminescence exhibited by the bacteria. The biological sensing element is placed inside a miniature airflow chamber that houses a light-to-frequency transducer, power supply, and Radio-Frequency (RF) transmitter to convert the intensity of bioluminescence exhibited by the bacteria population into a radio signal that is picked up by a RF receiver at a safe location. The miniature biosensor can be transported to the investigated on either a terrestrial or airborne robotic vehicle. Furthermore, numerous spatially distributed biosensors can be used to both map the extent and the rate-of-change in the dispersion of the hazardous contaminants over a large geographical area.

  11. Nanoscale Tunable Strong Carrier Density Modulation of 2D Materials for Metamaterials and Other Tunable Optoelectronics

    Science.gov (United States)

    Peng, Cheng; Efetov, Dmitri; Shiue, Ren-Jye; Nanot, Sebastien; Hempel, Marek; Kong, Jing; Koppens, Frank; Englund, Dirk

    Strong spatial tunability of the charge carrier density at nanoscale is essential to many 2D-material-based electronic and optoelectronic applications. As an example, plasmonic metamaterials with nanoscale dimensions would make graphene plasmonics at visible and near-infrared wavelengths possible. However, existing gating techniques based on conventional dielectric gating geometries limit the spatial resolution and achievable carrier concentration, strongly restricting the available wavelength, geometry, and quality of the devices. Here, we present a novel spatially selective electrolyte gating approach that allows for in-plane spatial Fermi energy modulation of 2D materials of more than 1 eV (carrier density of n = 1014 cm-2) across a length of 2 nm. We present electrostatic simulations as well as electronic transport, photocurrent, cyclic voltammetry and optical spectroscopy measurements to characterize the performance of the gating technique applied to graphene devices. The high spatial resolution, high doping capacity, full tunability and self-aligned device geometry of the presented technique opens a new venue for nanoscale metamaterial engineering of 2D materials for complete optical absorption, nonlinear optics and sensing, among other applications.

  12. All Inorganic Halide Perovskites Nanosystem: Synthesis, Structural Features, Optical Properties and Optoelectronic Applications.

    Science.gov (United States)

    Li, Xiaoming; Cao, Fei; Yu, Dejian; Chen, Jun; Sun, Zhiguo; Shen, Yalong; Zhu, Ying; Wang, Lin; Wei, Yi; Wu, Ye; Zeng, Haibo

    2017-03-01

    The recent success of organometallic halide perovskites (OHPs) in photovoltaic devices has triggered lots of corresponding research and many perovskite analogues have been developed to look for devices with comparable performance but better stability. Upon the preparation of all inorganic halide perovskite nanocrystals (IHP NCs), research activities have soared due to their better stability, ultrahigh photoluminescence quantum yield (PL QY), and composition dependent luminescence covering the whole visible region with narrow line-width. They are expected to be promising materials for next generation lighting and display, and many other applications. Within two years, a lot of interesting results have been observed. Here, the synthesis of IHPs is reviewed, and their progresses in optoelectronic devices and optical applications, such as light-emitting diodes (LEDs), photodetectors (PDs), solar cells (SCs), and lasing, is presented. Information and recent understanding of their crystal structures and morphology modulations are addressed. Finally, a brief outlook is given, highlighting the presently main problems and their possible solutions and future development directions.

  13. Polymer-silicon nanosheet composites: bridging the way to optoelectronic applications

    Science.gov (United States)

    Lyuleeva, Alina; Helbich, Tobias; Rieger, Bernhard; Lugli, Paolo

    2017-04-01

    The fabrication of electronic devices from sensitive, functional, two-dimensional (2D) nanomaterials with anisotropic structural properties has attracted much attention. Many theoretical and experimental studies have been performed; however, such materials have not been used in applications. In this context, the focus has shifted toward the study and synthesis of new materials. Freestanding hydrogen-terminated silicon nanosheets (SiNSs) are a new class of material with outstanding (opto)electronic properties (e.g. photoluminescence at approximately 510 nm) (Nakano 2014 J. Ceram. Soc. Japan 122 748). SiNSs are promising candidates for use in nanoelectronic devices and flexible electronics. Additional reasons for interest in such nanomaterials are their structural anisotropy and the fact that they are made from silicon. Here, we present examples for the application of functionalized SiNS-based composites as active materials for photonic sensors. The implementation of SiNSs in a covalent nanocomposite not only improves their stability but also facilitates subsequent device fabrication. Thus, SiNSs can be used in a straightforward setup preparation procedure. We show that the modification of novel Si-based 2D nanosheets with selected organic components not only opens a new field of photosensitive applications but also improves the processability of these nanosheets (Niu et al 2014 Sci. Rep. 4 4810, Chimene et al 2015 Adv. Mater. 27 7261).

  14. Widrow-cellular neural network and optoelectronic implementation

    Science.gov (United States)

    Bal, Abdullah

    A new type of optoelectronic cellular neural network has been developed by providing the capability of coefficients adjusment of cellular neural network (CNN) using Widrow based perceptron learning algorithm. The new supervised cellular neural network is called Widrow-CNN. Despite the unsupervised CNN, the proposed learning algorithm allows to use the Widrow-CNN for various image processing applications easily. Also, the capability of CNN for image processing and feature extraction has been improved using basic joint transform correlation architecture. This hardware application presents high speed processing capability compared to digital applications. The optoelectronic Widrow-CNN has been tested for classic CNN feature extraction problems. It yields the best results even in case of hard feature extraction problems such as diagonal line detection and vertical line determination.

  15. Pulse-train solutions and excitability in an optoelectronic oscillator

    Science.gov (United States)

    Rosin, D. P.; Callan, K. E.; Gauthier, D. J.; Schöll, E.

    2011-11-01

    We study an optoelectronic time-delay oscillator with bandpass filtering for different values of the filter bandwidth. Our experiments show novel pulse-train solutions with pulse widths that can be controlled over a three-order-of-magnitude range, with a minimum pulse width of ~150 ps. The equations governing the dynamics of our optoelectronic oscillator are similar to the FitzHugh-Nagumo model from neurodynamics with delayed feedback in the excitable and oscillatory regimes. Using a nullclines analysis, we derive an analytical proportionality between pulse width and the low-frequency cutoff of the bandpass filter, which is in agreement with experiments and numerical simulations. Furthermore, the nullclines help to describe the shape of the waveforms.

  16. Wide bandgap III-nitride nanomembranes for optoelectronic applications.

    Science.gov (United States)

    Park, Sung Hyun; Yuan, Ge; Chen, Danti; Xiong, Kanglin; Song, Jie; Leung, Benjamin; Han, Jung

    2014-08-13

    Single crystalline nanomembranes (NMs) represent a new embodiment of semiconductors having a two-dimensional flexural character with comparable crystalline perfection and optoelectronic efficacy. In this Letter, we demonstrate the preparation of GaN NMs with a freestanding thickness between 90 to 300 nm. Large-area (>5 × 5 mm(2)) GaN NMs can be routinely obtained using a procedure of conductivity-selective electrochemical etching. GaN NM is atomically flat and possesses an optical quality similar to that from bulk GaN. A light-emitting optical heterostructure NM consisting of p-GaN/InGaN quantum wells/GaN is prepared by epitaxy, undercutting etching, and layer transfer. Bright blue light emission from this heterostructure validates the concept of NM-based optoelectronics and points to potentials in flexible applications and heterogeneous integration.

  17. Research and Development of Electronic and Optoelectronic Materials in China

    Institute of Scientific and Technical Information of China (English)

    王占国

    2000-01-01

    A review on the research and development of electronic and optoelectronic materials in China, including the main scientific activities in this field, is presented. The state-of-the-arts and prospects of the electronic and optoelectronic materials in China are briefly introduced, such as those of silicon crystals, compound semiconductors, synthetic crystals, especially nonlinear optical crystals and rare-earth permanent magnets materials, etc. , with a greater emphasis on Chinese scientist's contributions to the frontier area of nanomaterials and nanostructures in the past few years. A new concept of the trip chemistry proposed by Dr. Liu Zhongfan from Peking University has also been described. Finally the possible research grants and the national policy to support the scientific research have been discussed.

  18. Adaptive Optoelectronic Eyes: Hybrid Sensor/Processor Architectures

    Science.gov (United States)

    2006-11-13

    J.  Lange , C. von der Malsburg, R. P. Würtz, and W. Konen, “Distortion Invariant Object Recognition Adaptive Optoelectronic Eyes: Hybrid Sensor...Meeting, Dallas, Texas, (November, 1998). 17.  G. Sáry, G. Kovács, K. Köteles, G.  Benedek , J. Fiser, and I. Biederman, “Selectivity Variations in Monkey

  19. Opto-electronics on Single Nanowire Quantum Dots

    OpenAIRE

    2010-01-01

    An important goal for nanoscale opto-electronics is the transfer of single electron spin states into single photon polarization states (and vice versa), thereby interfacing quantum transport and quantum optics. Such an interface enables new experiments in the field of quantum information processing. Single and entangled photon-pair generation can be used for quantum cryptography. Furthermore, photons can be used in the readout of a quantum computer based on electron spins. Semiconducting nano...

  20. Accurate manufacturing and production of optoelectronic parts and modules

    Science.gov (United States)

    Hannula, Tapio; Karioja, Pentti; Keraenen, Kimmo; Kopola, Harri K.; Malinen, Jouko; Ollila, Jyrki

    1998-12-01

    The trends in optoelectronic products are towards higher integration level of optics, electronics and mechanics. It means smaller dimensions and tighter packaging density. The precisions in component manufacturing and accuracies in module assemblings typically are in 10 to 50 micrometer range. Due to demands of the production in series of tens of thousands it means new type of know-how in production and assembling technologies.

  1. Optoelectronics-related competence building in Japanese and Western firms

    Science.gov (United States)

    Miyazaki, Kumiko

    1992-05-01

    In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.

  2. Design, fabrication, and testing of an optoelectronic interface connectorized module

    Science.gov (United States)

    Benoit, Jeffrey T.; Grzybowski, Richard R.; Rubino, Robert A.; Newman, Leon A.; Fields, Christopher V.; DiDomenico, John A.; Donofrio, Andrew J.

    1994-10-01

    As efforts to include fiber optic technology in aircraft flight control electronics have progressed, the need has arisen for a compact optoelectronic interface with an integral multipin optical connector. The United Technologies Research Center optoelectronic Connectorized Module (CM) was designed and built to satisfy this need. This paper will discuss the background, design, fabrication and testing of a completed Connectorized Module. The prototype CM is a four channel speed sensor interface that incorporates established ceramic multichip module (MCM-C) technology with optical emitters and detectors and a multipin fiber optic connector. This combination of technologies yields a compact and rugged interface module. In addition, the CM removes optical fibers, and their associated difficult to repair pigtails, from within the electronic control box. The CM achieves this because: it contains all necessary optoelectronic circuitry, has integral electrical and optical connectors, and is mounted directly on the electronic control box wall, not on an internal circuit board. Although this CM is a speed sensor interface, the flexible nature of MCM-C technology will enable a wide variety of sensor and data communication interfaces to be implemented.

  3. Web-Enabled Optoelectronic Particle-Fallout Monitor

    Science.gov (United States)

    Lineberger, Lewis P.

    2008-01-01

    A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.

  4. Planar nanophotonic devices and integration technologies

    Science.gov (United States)

    De La Rue, Richard M.; Sorel, Marc; Samarelli, Antonio; Velha, Philippe; Strain, Michael; Johnson, Nigel P.; Sharp, Graham; Rahman, Faiz; Khokhar, Ali Z.; Macintyre, Douglas S.; McMeekin, Scott G.; Lahiri, Basudev

    2011-07-01

    Planar devices that can be categorised as having a nanophotonic dimension constitute an increasingly important area of photonics research. Device structures that come under the headings of photonic crystals, photonic wires and metamaterials are all of interest - and devices based on combinations of these conceptual approaches may also play an important role. Planar micro-/nano-photonic devices seem likely to be exploited across a wide spectrum of applications in optoelectronics and photonics. This spectrum includes the domains of display devices, biomedical sensing and sensing more generally, advanced fibre-optical communications systems - and even communications down to the local area network (LAN) level. This article will review both device concepts and the applications possibilities of the various different devices.

  5. Nano-scale engineering using lead chalcogenide nanocrystals for opto-electronic applications

    Science.gov (United States)

    Xu, Fan

    Colloidal quantum dots (QDs) or nanocrystals of inorganic semiconductors exhibit exceptional optoelectronic properties such as tunable band-gap, high absorption cross-section and narrow emission spectra. This thesis discusses the characterizations and physical properties of lead-chalcogenide nanocrystals, their assembly into more complex nanostructures and applications in solar cells and near-infrared light-emitting devices. In the first part of this work, we demonstrate that the band edge emission of PbS quantum dots can be tuned from the visible to the mid-infrared region through size control, while the self-attachment of PbS nanocrystals can lead to the formation of 1-D nanowires, 2-D quantum dot monolayers and 3-D quantum dot solids. In particular, the assembly of closely-packed quantum dot solids has attracted enormous attention. A series of distinctive optoelectronic properties has been observed, such as superb multiple exciton generation efficiencies, efficient hot-electron transfer and cold-exciton recycling. Since the surfactant determines the quantum dot surface passivation and inter dot electronic coupling, we examine the influence of different cross-linking surfactants on the optoelectronic properties of the quantum dot solids. Then, we discuss the ability to tune the quantum dot band-gap combined with the controllable assembly of lead-chalcogenide quantum dots, which opens new possibilities to engineer the properties of quantum dot solids. The PbS and PbSe quantum dot cascade structures and PbS/PbSe quantum dot heterojunctions are assembled using the layer-by-layer deposition method. We show that exciton funnelling and trap state-bound exciton recycling in the quantum dot cascade structure dramatically enhances the quantum dots photoluminescence. Moreover, we show that both type-I and type-II PbS/PbSe quantum dot heterojunctions can be assembled by carefully choosing the quantum dot sizes. In type-I heterojunctions, the excited electron-hole pairs tend

  6. Optically Reconfigurable Photonic Devices

    CERN Document Server

    Wang, Qian; Gholipour, Behrad; Wang, Chih-Ming; Yuan, Guanghui; Teng, Jinghua; Zheludev, Nikolay I

    2015-01-01

    Optoelectronic components with adjustable parameters, from variable-focal-length lenses to spectral filters that can change functionality upon stimulation, have enormous technological importance. Tuning of such components is conventionally achieved by either micro- or nano-mechanical actuation of their consitutive parts, stretching or application of thermal stimuli. Here we report a new dielectric metasurface platform for reconfigurable optical components that are created with light in a non-volatile and reversible fashion. Such components are written, erased and re-written as two-dimensional binary or grey-scale patterns into a nanoscale film of phase change material by inducing a refractive-index-changing phase-transition with tailored trains of femtosecond pulses. We combine germanium-antimony-tellurium-based films optimized for high-optical-contrast ovonic switching with a sub-wavelength-resolution optical writing process to demonstrate technologically relevant devices: visible-range reconfigurable bi-chr...

  7. Wavelength conversion devices and techniques

    DEFF Research Database (Denmark)

    Stubkjær, Kristian; Jørgensen, Carsten; Danielsen, Søren Lykke;

    1996-01-01

    Wavelength division multiplexed (WDM) networks are currently subject to an immense interest because of the extra capacity and flexibility they provide together with the possibilities for graceful system upgrades. For full network flexibility it is very attractive to be able to translate the chann...... wavelengths in an easy way and preferably without opto-electronic conversion. Here, we will first briefly look at advantages of employing optical wavelength converters in WDM networks and next review the optical wavelength conversion devices with emphasis on recent developments....

  8. Frequency and electric field controllable photodevice: FYTRONIX device

    Science.gov (United States)

    Tataroğlu, A.; Al-Sehemi, Abdullah G.; Özdemir, Mehmet; Özdemir, Resul; Usta, Hakan; Al-Ghamdi, Ahmed A.; Farooq, W. A.; Yakuphanoglu, F.

    2017-08-01

    Al/p-Si/BODIPY/Al diode was fabricated by forming BODIPY organic layer on p-Si having ohmic contact. The electrical and photoresponse properties of the prepared diode were investigated in detail. The current-voltage (I-V) measurements were performed under dark and various illumination intensities. It is observed that the photocurrent under illumination is higher than the dark current. The transient measurements indicate that the device exhibits both photodiode and photocapacitor behavior. We called this device as FYTRONIX device. The photoresponse behavior of the FYTRONIX device is controlled simultaneously by frequency and electric field. The FYRONIX device can be used as a photoresponse sensor in optoelectronic applications.

  9. Facile synthesis of carbon doped TiO2 nanowires without an external carbon source and their opto-electronic properties.

    Science.gov (United States)

    Kiran, Vankayala; Sampath, Srinivasan

    2013-11-07

    The present study demonstrates a simple protocol for the preparation of one dimensional (1D) oxidized titanium carbide nanowires and their opto-electronic properties. The oxidized titanium carbide nanowires (Ox-TiC-NW) are prepared from TiC nanowires (TiC-NW) that are in turn synthesized from micron sized TiC particles using the solvothermal technique. The Ox-TiC-NW is characterized by X-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy (TEM), scanning electron microscopy (SEM) and Raman spectroscopy. Thermal oxidation of TiC-NW yields carbon doped TiO2-NW (C-TiO2-NW), a simple methodology to obtain 1D C-TiO2-NW. Temperature dependent Raman spectra reveal characteristic bands for TiO2-NW. Electrical characterization of individual C-TiO2-NW is performed by fabricating a device structure using the focused ion beam deposition technique. The opto-electronic properties of individual C-TiO2-NW demonstrate visible light activity and the parameters obtained from photoconductivity measurements reveal very good sensitivity. This methodology opens up the possibility of using C-TiO2-NW in electronic and opto-electronic device applications.

  10. Variation in optoelectronic properties of azo dye-sensitized TiO2 semiconductor interfaces with different adsorption anchors: carboxylate, sulfonate, hydroxyl and pyridyl groups.

    Science.gov (United States)

    Zhang, Lei; Cole, Jacqueline M; Dai, Chencheng

    2014-05-28

    The optoelectronic properties of four azo dye-sensitized TiO2 interfaces are systematically studied as a function of a changing dye anchoring group: carboxylate, sulfonate, hydroxyl, and pyridyl. The variation in optoelectronic properties of the free dyes and those in dye/TiO2 nanocomposites are studied both experimentally and computationally, in the context of prospective dye-sensitized solar cell (DSSC) applications. Experimental UV/vis absorption spectroscopy, cyclic voltammetry, and DSSC device performance testing reveal a strong dependence on the nature of the anchor of the optoelectronic properties of these dyes, both in solution and as dye/TiO2 nanocomposites. First-principles calculations on both an isolated dye/TiO2 cluster model (using localized basis sets) and each dye modeled onto the surface of a 2D periodic TiO2 nanostructure (using plane wave basis sets) are presented. Detailed examination of these experimental and computational results, in terms of light harvesting, electron conversion and photovoltaic device performance characteristics, indicates that carboxylate is the best anchoring group, and hydroxyl is the worst, whereas sulfonate and pyridyl groups exhibit competing potential. Different sensitization solvents are found to affect critically the extent of dye adsorption achieved in the dye-sensitization of the TiO2 semiconductor, especially where the anchor is a pyridyl group.

  11. Battery-free, stretchable optoelectronic systems for wireless optical characterization of the skin.

    Science.gov (United States)

    Kim, Jeonghyun; Salvatore, Giovanni A; Araki, Hitoshi; Chiarelli, Antonio M; Xie, Zhaoqian; Banks, Anthony; Sheng, Xing; Liu, Yuhao; Lee, Jung Woo; Jang, Kyung-In; Heo, Seung Yun; Cho, Kyoungyeon; Luo, Hongying; Zimmerman, Benjamin; Kim, Joonhee; Yan, Lingqing; Feng, Xue; Xu, Sheng; Fabiani, Monica; Gratton, Gabriele; Huang, Yonggang; Paik, Ungyu; Rogers, John A

    2016-08-01

    Recent advances in materials, mechanics, and electronic device design are rapidly establishing the foundations for health monitoring technologies that have "skin-like" properties, with options in chronic (weeks) integration with the epidermis. The resulting capabilities in physiological sensing greatly exceed those possible with conventional hard electronic systems, such as those found in wrist-mounted wearables, because of the intimate skin interface. However, most examples of such emerging classes of devices require batteries and/or hard-wired connections to enable operation. The work reported here introduces active optoelectronic systems that function without batteries and in an entirely wireless mode, with examples in thin, stretchable platforms designed for multiwavelength optical characterization of the skin. Magnetic inductive coupling and near-field communication (NFC) schemes deliver power to multicolored light-emitting diodes and extract digital data from integrated photodetectors in ways that are compatible with standard NFC-enabled platforms, such as smartphones and tablet computers. Examples in the monitoring of heart rate and temporal dynamics of arterial blood flow, in quantifying tissue oxygenation and ultraviolet dosimetry, and in performing four-color spectroscopic evaluation of the skin demonstrate the versatility of these concepts. The results have potential relevance in both hospital care and at-home diagnostics.

  12. Optoelectronic energy transfer at novel biohybrid interfaces using light harvesting complexes from Chloroflexus aurantiacus.

    Science.gov (United States)

    Sridharan, Arati; Muthuswamy, Jit; Pizziconi, Vincent B

    2009-06-02

    In nature, nanoscale supramolecular light harvesting complexes initiate the photosynthetic energy collection process at high quantum efficiencies. In this study, the distinctive antenna structure from Chloroflexus aurantiacusthe chlorosomeis assessed for potential exploitation in novel biohybrid optoelectronic devices. Electrochemical characterization of bacterial fragments containing intact chlorosomes with the photosynthetic apparatus show an increase in the charge storage density near the working electrode upon light stimulation and suggest that chlorosomes contribute approximately one-third of the overall photocurrent. Further, isolated chlorosomes (without additional photosynthetic components, e.g., reaction centers, biochemical mediators) produce a photocurrent (approximately 8-10 nA) under light saturation conditions. Correlative experiments indicate that the main chlorosome pigment, bacteriochlorophyll-c, contributes to the photocurrent via an oxidative mechanism. The results reported herein are the first to demonstrate that isolated chlorosomes (lipid-enclosed sacs of pigments) directly transduce light energy in an electrochemical manner, laying an alternative, biomimetic approach for designing photosensitized interfaces in biofuel cells and biomedical devices, such as bioenhanced retinal prosthetics.

  13. Ultraminiaturized photovoltaic and radio frequency powered optoelectronic systems for wireless optogenetics

    Science.gov (United States)

    Park, Sung Il; Shin, Gunchul; Banks, Anthony; McCall, Jordan G.; Siuda, Edward R.; Schmidt, Martin J.; Chung, Ha Uk; Nim Noh, Kyung; Guo-Han Mun, Jonathan; Rhodes, Justin; Bruchas, Michael R.; Rogers, John A.

    2015-10-01

    Objective. Wireless control and power harvesting systems that operate injectable, cellular-scale optoelectronic components provide important demonstrated capabilities in neuromodulatory techniques such as optogenetics. Here, we report a radio frequency (RF) control/harvesting device that offers dramatically reduced size, decreased weight and improved efficiency compared to previously reported technologies. Combined use of this platform with ultrathin, multijunction, high efficiency solar cells allows for hundred-fold reduction of transmitted RF power, which greatly enhances the wireless coverage. Approach. Fabrication involves separate construction of the harvester and the injectable µ-ILEDs. To test whether the presence of the implantable device alters behavior, we implanted one group of wild type mice and compared sociability behavior to unaltered controls. Social interaction experiments followed protocols defined by Silverman et al. with minor modifications. Main results. The results presented here demonstrate that miniaturized RF harvesters, and RF control strategies with photovoltaic harvesters can, when combined with injectable µ-ILEDs, offer versatile capabilities in optogenetics. Experimental and modeling studies establish a range of effective operating conditions for these two approaches. Optogenetics studies with social groups of mice demonstrate the utility of these systems. Significance. The addition of miniaturized, high performance photovoltaic cells significantly expands the operating range and reduces the required RF power. The platform can offer capabilities to modulate signaling path in the brain region of freely-behaving animals. These suggest its potential for widespread use in neuroscience.

  14. Alloying InAs and InP nanowires for optoelectronic applications: A first principles study

    Energy Technology Data Exchange (ETDEWEB)

    Toniolo, Giuliano R.; Anversa, Jonas [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Santos, Cláudia L. dos [Área de Ciências Tecnológicas, Centro Universitário Franciscano, 97010-032, Santa Maria, RS (Brazil); Piquini, Paulo, E-mail: paulo.piquini@ufsm.br [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil)

    2014-08-01

    The capability of nanowires to relieve the stress introduced by lattice mismatching through radial relaxation opens the possibility to search for devices for optoelectronic applications. However, there are difficulties to fabricate, and therefore to explore the properties of nanowires with narrow diameters. Here we apply first principles calculations to study the electronic and optical properties of narrow InAs{sub 1−x}P{sub x} nanowires. Our results show that the absorption threshold can be pushed to near-ultraviolet region, and suggests that arrays of these nanowires with different diameters and compositions could be used as devices acting from the mid-infrared to the near-ultraviolet region. - Highlights: • The optical properties of InAsP alloy nanowires were studied using DFT calculations. • The variation of band edges and band offsets with composition were determined. • The dependence of the optical absorption with alloy composition was settled. • The onset for optical absorption is suggested to be pushed to the UV region.

  15. Exotic optoelectronic properties of organic semiconductors with super-controlled nanoscale sizes and molecular shapes.

    Science.gov (United States)

    Hotta, Shu; Yamao, Takeshi; Katagiri, Toshifumi

    2014-03-01

    We present several aspects of thiophene/phenylene co-oligomers (TPCOs). TPCOs are regarded as a newly occurring class of organic semiconductors. These materials are synthesized by hybridizing thiophene and phenylene rings at the molecular level with their various mutual arrangements. These materials are characterized by the super-controlled nanoscale sizes and molecular shapes. These produce peculiar crystallographic structures and high-performance optical and electronic properties. The crystals of TPCOs were obtained through both vapor phase and liquid phase. In the TPCO crystals, the molecules take upright configuration. These cause large carrier mobilities of field-effect transistors and laser oscillations under optical excitations. Spectrally-narrowed emissions (SNEs) were also achieved under weak optical excitation using a mercury lamp. The light-emitting field-effect transistors using these crystals for an active layer have shown the current-injected SNEs when the device was combined with an optical cavity and operated by an alternating-current gate-voltage method. Thus the TPCO materials will play an important role in the future in the fields of nanoscale technology and organic semiconductor materials as well as their optoelectronic device applications.

  16. Acousto-optic collinear filter with optoelectronic feedback

    Science.gov (United States)

    Mantsevich, S. N.; Balakshy, V. I.; Kuznetsov, Yu. I.

    2017-04-01

    A spectral optoelectronic system combining a collinear acousto-optic cell fabricated of calcium molybdate single crystal and a positive electronic feedback is proposed first and examined theoretically and experimentally. The feedback signal is formed at the cell output due to the optical heterodyning effect with the use of an unconventional regime of cell operation. It is shown that the feedback enables controlling spectral characteristics of the acousto-optic cell, resulting in enhancing the spectral resolution and the accuracy of optical wavelength determination. In the experiment, maximal filter passband narrowing was as great as 37 times.

  17. Optoelectronic set for measuring reflectance spectrum of living human skin

    Science.gov (United States)

    Gryko, Lukasz; Zajac, Andrzej; Gilewski, Marian; Kulesza, Ewa

    2015-09-01

    In the paper the authors present the developed optoelectronic set for measuring spectral reflectance of living human skin. The basic elements of the set are: the illuminator consists of the LED illuminator emitting a uniform distribution of spectral irradiance in the exposed field, the semispherical measuring chamber and the spectrometer which measures spectrum of reflected radiation. Measured radiation is from spectral range of tissue optical window (from 600 nm to 1000 nm). Knowledge about the reflectance spectrum of the patient skin allows adjusting spectral and energetic parameters of the radiation used in biostimulation treatment. The developed set also enables the repeatable exposures of patients in the Low Level Laser Therapy procedures.

  18. WDM module research within the Canadian Solid State Optoelectronics Consortium

    Science.gov (United States)

    Fallahi, Mahmoud; Koteles, Emil S.; Delage, Andre; Chatenoud, F.; Templeton, Ian M.; Champion, Garth; He, Jian Jun; Wang, Weijian; Dion, Michael M.; Barber, Richard A.

    1995-02-01

    We report on the design, growth, fabrication, and characterization of monolithic wavelength division multiplexed (WDM) modules produced within the Canadian Solid State Optoelectronics Consortium. The transmitter module includes multiple, discrete wavelength, distributed Bragg reflector (DBR) laser diodes monolithically integrated with waveguide combiners fabricated using an InGaAs/GaAs heterostructure. The wavelength demultiplexer unit is based on a Rowland circle grating spectrometer monolithically integrated with a metal- semiconductor-metal (MSM) detector array fabricated on an InGaAs/AlGaAs/GaAs heterostructure. The epitaxial layer wafers for both transmitter and receiver modules were grown in single molecular beam epitaxy (MBE) runs.

  19. Neuromorphic opto-electronic integrated circuits for optical signal processing

    Science.gov (United States)

    Romeira, B.; Javaloyes, J.; Balle, S.; Piro, O.; Avó, R.; Figueiredo, J. M. L.

    2014-08-01

    The ability to produce narrow optical pulses has been extensively investigated in laser systems with promising applications in photonics such as clock recovery, pulse reshaping, and recently in photonics artificial neural networks using spiking signal processing. Here, we investigate a neuromorphic opto-electronic integrated circuit (NOEIC) comprising a semiconductor laser driven by a resonant tunneling diode (RTD) photo-detector operating at telecommunication (1550 nm) wavelengths capable of excitable spiking signal generation in response to optical and electrical control signals. The RTD-NOEIC mimics biologically inspired neuronal phenomena and possesses high-speed response and potential for monolithic integration for optical signal processing applications.

  20. Quantum dot rolled-up microtube optoelectronic integrated circuit.

    Science.gov (United States)

    Bhowmick, Sishir; Frost, Thomas; Bhattacharya, Pallab

    2013-05-15

    A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.

  1. Optoelectronics, a global telecom carrier’s perspective

    CERN Document Server

    Batten, J

    2008-01-01

    This paper summarises the current approaches to high speed optical transmission design. Cable & Wireless operates a large global optical transmission network, with the main purpose of serving the bandwidth market and of providing connectivity for its Internet Protocol data networks. In long haul spans, dense wavelength division multiplexed systems with aggregate capacities of 1 Tbit/s per fibre are deployed. The increase in bandwidth requirement is driving the need for more complex technologies that deliver a jump in system capacity. Emerging optoelectronic technologies are discussed, with particular focus on 40 Gb/s per wavelength transmission and optical wavelength switching.

  2. Manipulation of microparticles and red blood cells using optoelectronic tweezers

    Indian Academy of Sciences (India)

    R S Verma; R Dasgupta; N Kumar; S Ahlawat; A Uppal; P K Gupta

    2014-02-01

    We report the development of an optoelectronic tweezers set-up which works by lightinduced dielectrophoresis mechanism to manipulate microparticles. We used thermal evaporation technique for coating the organic polymer, titanium oxide phthalocyanine (TiOPc), as a photoconductive layer on ITO-coated glass slide. Compare to the conventional optical tweezers, the technique requires optical power in W range and provides a manipulation area of a few mm2. The set-up was used to manipulate the polystyrene microspheres and red blood cells (RBCs). The RBCs could be attracted or repelled by varying the frequency of the applied AC bias.

  3. 基于微结构光纤的新型功能器件、异质兼容结构与光电子集成2013年度进展报告%Functional Devices, Heterogeneous Compatible Structure and Optoelectronic Integration Based on Microstructural Optical Fiber/2013 Annual Report

    Institute of Scientific and Technical Information of China (English)

    刘艳格; 张霞; 王志; 张昊; 周文远

    2016-01-01

    According to the main research topics and expectations of the mission statement for this year, we carried out a lot of theoretical and experimental studies, the main findings of the report include the following:(1)The conduction mechanism and mode characteristics of a simplified hollow-core microstructure optical fiber have been investigated and revealed. A high efficiency fluorescence measurement technology based on the simplified hollow-core microstructure optical fiber and lateral side detection approach has been demonstrated. A highlighted sensitivity with dye concentrations down to 1 pM is achieved, which is the best value in the reported to our best knowledge.(2)The mode coupling and modal birefringence characteristics of various types of the high-index-filled MOFs with different selective filling configurations and different materials have been theoretically investigated. Sensors with ultrahigh sensitivity based on the Sagnac interferometer using this type of birefringence fiber has been proposed and demonstrated.(3)A twin-resonance-coupling phenomenon in a selectively single-hole fluid-filled microstructure optical fiber have been proposed, demonstrated and investigated. Sensitivities of 290 nm/°C (739,796 nm/RIU) and 591.84 nm/N (701.2 pm/με) are achieved, which are the highest for a fiber-based device to date to our best knowledge.(4)A fluid-filled two-mode photonic crystal fiber (PCF)-based intermodal interferometer have been demonstrated and investigated.(5)We have reported on the fabrication and resonance mechanism of a fiber Bragg grating (FBG) with multiple resonances in a two-dimensional waveguide array microstructured optical fiber. Simultaneous measurement results of curvature and axial strain have also demonstrated.(6)The acousto-optic mode coupling in grapefruit microstructured optical fibers (GMOFs) has been investigated and unequal acoustic modulation is generated, and orthogonal acoustic gratings come into being in the GMOF.(7)We have

  4. Nano-Bio Electronic Devices Based on DNA Bases and Proteins

    Science.gov (United States)

    Rinaldi, R.; Maruccio, G.; Bramanti, A.; Visconti, P.; Biasco, A.; Arima, V.; D'Amico, S.; Cingolani, R.

    A key challenge of the current research in nanoelectronics is the realization of biomolecular devices. The biomolecules have specific functionalies that can be exploited for the implementation of electronic and optoelectronic devices. Different nanotechnological strategies have been pursued to implement the biomolecular devices, following a bottom-up or a topdown approach depending on the used biomolecule and on its functionality. In this paper we present our results on the implementation of nano-biomolecular devices based on modified DNA nucleosides and metalloproteins.

  5. GaN Substrates for III-Nitride Devices

    OpenAIRE

    2010-01-01

    Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization...

  6. Optoelectronic leak detection system for monitoring subsea structures

    Science.gov (United States)

    Moodie, D.,; Costello, L.; McStay, D.

    2010-04-01

    Leak detection and monitoring on subsea structures is an area of increasing interest for the detection and monitoring of production and control fluids for the oil and gas industry. Current techniques such as capacitive (dielectric) based measurement or passive acoustic systems have limitations and we report here an optoelectronic solution based upon fluorescence spectroscopy to provide a permanent monitoring solution. We report here a new class of optoelectronic subsea sensor for permanent, real time monitoring of hydrocarbon production systems. The system is capable of detecting small leaks of production or hydraulic fluid (ppm levels) over distances of 4-5 meters in a subsea environment. Ideally systems designed for such applications should be capable of working at depths of up to 3000m unattended for periods of 20+ years. The system uses advanced single emitter LED technology to meet the challenges of lifetime, power consumption, spatial coverage and delivery of a cost effective solution. The system is designed for permanent deployment on Christmas tree (XT), subsea processing systems (SPS) and associated equipment to provide enhanced leak detection capability.

  7. Optoelectronic scanning system upgrade by energy center localization methods

    Science.gov (United States)

    Flores-Fuentes, W.; Sergiyenko, O.; Rodriguez-Quiñonez, J. C.; Rivas-López, M.; Hernández-Balbuena, D.; Básaca-Preciado, L. C.; Lindner, L.; González-Navarro, F. F.

    2016-11-01

    A problem of upgrading an optoelectronic scanning system with digital post-processing of the signal based on adequate methods of energy center localization is considered. An improved dynamic triangulation analysis technique is proposed by an example of industrial infrastructure damage detection. A modification of our previously published method aimed at searching for the energy center of an optoelectronic signal is described. Application of the artificial intelligence algorithm of compensation for the error of determining the angular coordinate in calculating the spatial coordinate through dynamic triangulation is demonstrated. Five energy center localization methods are developed and tested to select the best method. After implementation of these methods, digital compensation for the measurement error, and statistical data analysis, a non-parametric behavior of the data is identified. The Wilcoxon signed rank test is applied to improve the result further. For optical scanning systems, it is necessary to detect a light emitter mounted on the infrastructure being investigated to calculate its spatial coordinate by the energy center localization method.

  8. Bioinspired Transparent Laminated Composite Film for Flexible Green Optoelectronics.

    Science.gov (United States)

    Lee, Daewon; Lim, Young-Woo; Im, Hyeon-Gyun; Jeong, Seonju; Ji, Sangyoon; Kim, Yong Ho; Choi, Gwang-Mun; Park, Jang-Ung; Lee, Jung-Yong; Jin, Jungho; Bae, Byeong-Soo

    2017-07-19

    Herein, we report a new version of a bioinspired chitin nanofiber (ChNF) transparent laminated composite film (HCLaminate) made of siloxane hybrid materials (hybrimers) reinforced with ChNFs, which mimics the nanofiber-matrix structure of hierarchical biocomposites. Our HCLaminate is produced via vacuum bag compressing and subsequent UV-curing of the matrix resin-impregnated ChNF transparent paper (ChNF paper). It is worthwhile to note that this new type of ChNF-based transparent substrate film retains the strengths of the original ChNF paper and compensates for ChNF paper's drawbacks as a flexible transparent substrate. As a result, compared with high-performance synthetic plastic films, such as poly(ethylene terephthalate), poly(ether sulfone), poly(ethylene naphthalate), and polyimide, our HCLaminate is characterized to exhibit extremely smooth surface topography, outstanding optical clarity, high elastic modulus, high dimensional stability, etc. To prove our HCLaminate as a substrate film, we use it to fabricate flexible perovskite solar cells and a touch-screen panel. As far as we know, this work is the first to demonstrate flexible optoelectronics, such as flexible perovskite solar cells and a touch-screen panel, actually fabricated on a composite film made of ChNF. Given its desirable macroscopic properties, we envision our HCLaminate being utilized as a transparent substrate film for flexible green optoelectronics.

  9. Development of an optoelectronic holographic platform for otolaryngology applications

    Science.gov (United States)

    Harrington, Ellery; Dobrev, Ivo; Bapat, Nikhil; Flores, Jorge Mauricio; Furlong, Cosme; Rosowski, John; Cheng, Jeffery Tao; Scarpino, Chris; Ravicz, Michael

    2010-08-01

    In this paper, we present advances on our development of an optoelectronic holographic computing platform with the ability to quantitatively measure full-field-of-view nanometer-scale movements of the tympanic membrane (TM). These measurements can facilitate otologists' ability to study and diagnose hearing disorders in humans. The holographic platform consists of a laser delivery system and an otoscope. The control software, called LaserView, is written in Visual C++ and handles communication and synchronization between hardware components. It provides a user-friendly interface to allow viewing of holographic images with several tools to automate holography-related tasks and facilitate hardware communication. The software uses a series of concurrent threads to acquire images, control the hardware, and display quantitative holographic data at video rates and in two modes of operation: optoelectronic holography and lensless digital holography. The holographic platform has been used to perform experiments on several live and post-mortem specimens, and is to be deployed in a medical research environment with future developments leading to its eventual clinical use.

  10. Optoelectronic polarimeter controlled by a graphical user interface of Matlab

    Science.gov (United States)

    Vilardy, J. M.; Jimenez, C. J.; Torres, R.

    2017-01-01

    We show the design and implementation of an optical polarimeter using electronic control. The polarimeter has a software with a graphical user interface (GUI) that controls the optoelectronic setup and captures the optical intensity measurement, and finally, this software evaluates the Stokes vector of a state of polarization (SOP) by means of the synchronous detection of optical waves. The proposed optoelectronic polarimeter can determine the Stokes vector of a SOP in a rapid and efficient way. Using the polarimeter proposed in this paper, the students will be able to observe (in an optical bench) and understand the different interactions of the SOP when the optical waves pass through to the linear polarizers and retarder waves plates. The polarimeter prototype could be used as a main tool for the students in order to learn the theory and experimental aspects of the SOP for optical waves via the Stokes vector measurement. The proposed polarimeter controlled by a GUI of Matlab is more attractive and suitable to teach and to learn the polarization of optical waves.

  11. Optoelectronic tweezers for the measurement of the relative stiffness of erythrocytes

    Science.gov (United States)

    Neale, Steven L.; Mody, Nimesh; Selman, Colin; Cooper, Jonathan M.

    2012-10-01

    In this paper we describe the first use of Optoelectronic Tweezers (OET), an optically controlled micromanipulation method, to measure the relative stiffness of erythrocytes in mice. Cell stiffness is an important measure of cell health and in the case of erythrocytes, the most elastic cells in the body, an increase in cell stiffness can indicate pathologies such as type II diabetes mellitus or hypertension (high blood pressure). OET uses a photoconductive device to convert an optical pattern into and electrical pattern. The electrical fields will create a dipole within any polarisable particles in the device, such as cells, and non-uniformities of the field can be used to place unequal forces onto each side of the dipole thus moving the particle. In areas of the device where there are no field gradients, areas of constant illumination, the force on each side of the dipole will be equal, keeping the cell stationary, but as there are opposing forces on each side of the cell it will be stretched. The force each cell will experience will differ slightly so the stretching will depend on the cells polarisability as well as its stiffness. Because of this a relative stiffness rather than absolute stiffness is measured. We show that with standard conditions (20Vpp, 1.5MHz, 10mSm-1 medium conductivity) the cell's diameter changes by around 10% for healthy mouse erythrocytes and we show that due to the low light intensities required for OET, relative to conventional optical tweezers, multiple cells can be measured simultaneously.

  12. Optoelectronic method for detection of cervical intraepithelial neoplasia and cervical cancer

    Science.gov (United States)

    Pruski, D.; Przybylski, M.; Kędzia, W.; Kędzia, H.; Jagielska-Pruska, J.; Spaczyński, M.

    2011-12-01

    The optoelectronic method is one of the most promising concepts of biophysical program of the diagnostics of CIN and cervical cancer. Objectives of the work are evaluation of sensitivity and specificity of the optoelectronic method in the detection of CIN and cervical cancer. The paper shows correlation between the pNOR number and sensitivity/specificity of the optoelectronic method. The study included 293 patients with abnormal cervical cytology result and the following examinations: examination with the use of the optoelectronic method — Truscreen, colposcopic examination, and histopathologic biopsy. Specificity of the optoelectronic method for LGSIL was estimated at 65.70%, for HGSIL and squamous cell carcinoma of cervix amounted to 90.38%. Specificity of the optoelectronic method used to confirm lack of cervical pathology was estimated at 78.89%. The field under the ROC curve for the optoelectronic method was estimated at 0.88 (95% CI, 0.84-0.92) which shows high diagnostic value of the test in the detection of HGSIL and squamous cell carcinoma. The optoelectronic method is characterised by high usefulness in the detection of CIN, present in the squamous epithelium and squamous cell carcinoma of cervix.

  13. Quantum Dot Superlattice Enabled Rational Design in Optoelectronics and Hydrogen Generation

    Science.gov (United States)

    2014-11-25

    Final 3. DATES COVERED (From - To) 22-April-2013 to 21-April-2014 4. TITLE AND SUBTITLE Quantum Dot Superlattice Enabled Rational Design...15. SUBJECT TERMS Quantum Dots , Optoelectronic Applications, Charge Transfer, Superlattices, Density Functional Theory, Coupling...FA2386-13-1-4074 “ Quantum Dot Superlattice Enabled Rational Design in Optoelectronics and Hydrogen Generation” April 21, 2014 PI and Co-PI

  14. Solid state carbon nanotube device for controllable trion electroluminescence emission

    Science.gov (United States)

    Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

    2016-03-01

    Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for

  15. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  16. Structural and optoelectronic properties of the zinc titanate perovskite and spinel by modified Becke–Johnson potential

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Zahid, E-mail: zahidf82@gmail.com [Materials Modeling Center, Department of Physics, University of Malakand, Chakdara (Pakistan); Ali, Sajad [Materials Modeling Center, Department of Physics, University of Malakand, Chakdara (Pakistan); Department of Physics, Abdul Wali Khan University, Mardan (Pakistan); Ahmad, Iftikhar; Khan, Imad [Materials Modeling Center, Department of Physics, University of Malakand, Chakdara (Pakistan); Rahnamaye Aliabad, H.A. [Department of Physics, Hakim Savzevari University, Sabzevar (Iran, Islamic Republic of)

    2013-07-01

    Structural and electronic properties of the cubic perovskite ZnTiO{sub 3} and spinel Zn{sub 2}TiO{sub 4} are theoretically studied by the modified Becke–Johnson (mBJ) potential within the framework of density functional theory (DFT). The calculated lattice constants are found to be consistent with the experimental results. The electronic band structures of both the materials reveal that ZnTiO{sub 3} is an indirect band gap while Zn{sub 2}TiO{sub 4} is a direct band gap semiconductor. The calculated fundamental band gaps of these compounds are 2.7 eV and 3.18 eV, which are consistent with the experimental band gaps of 2.9 eV and 3.1 eV, respectively. Zn{sub 2}TiO{sub 4} is a wide and direct band gap compound and hence is an attractive material for optoelectronic applications, especially in near ultraviolet (UV) optoelectronics. Keeping in view the importance of Zn{sub 2}TiO{sub 4} in low frequency UV devices its optical properties like dielectric functions, refractive index, reflectivity and energy loss function are also evaluated and discussed in detail.

  17. Self-Locking Optoelectronic Tweezers for Single-Cell and Microparticle Manipulation across a Large Area in High Conductivity Media.

    Science.gov (United States)

    Yang, Yajia; Mao, Yufei; Shin, Kyeong-Sik; Chui, Chi On; Chiou, Pei-Yu

    2016-03-04

    Optoelectronic tweezers (OET) has advanced within the past decade to become a promising tool for cell and microparticle manipulation. Its incompatibility with high conductivity media and limited throughput remain two major technical challenges. Here a novel manipulation concept and corresponding platform called Self-Locking Optoelectronic Tweezers (SLOT) are proposed and demonstrated to tackle these challenges concurrently. The SLOT platform comprises a periodic array of optically tunable phototransistor traps above which randomly dispersed single cells and microparticles are self-aligned to and retained without light illumination. Light beam illumination on a phototransistor turns off the trap and releases the trapped cell, which is then transported downstream via a background flow. The cell trapping and releasing functions in SLOT are decoupled, which is a unique feature that enables SLOT's stepper-mode function to overcome the small field-of-view issue that all prior OET technologies encountered in manipulation with single-cell resolution across a large area. Massively parallel trapping of more than 100,000 microparticles has been demonstrated in high conductivity media. Even larger scale trapping and manipulation can be achieved by linearly scaling up the number of phototransistors and device area. Cells after manipulation on the SLOT platform maintain high cell viability and normal multi-day divisibility.

  18. Structure and Growth Control of Organic–Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals

    Science.gov (United States)

    Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong

    2016-01-01

    Recently, organic–inorganic halide perovskites have sparked tremendous research interest because of their ground‐breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light‐emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high‐quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three‐dimensional large sized single crystals, two‐dimensional nanoplates, one‐dimensional nanowires, to zero‐dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high‐performance (opto)electronic devices.

  19. Structure and Growth Control of Organic-Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals.

    Science.gov (United States)

    Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong; Liang, Ziqi

    2016-04-01

    Recently, organic-inorganic halide perovskites have sparked tremendous research interest because of their ground-breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light-emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high-quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three-dimensional large sized single crystals, two-dimensional nanoplates, one-dimensional nanowires, to zero-dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high-performance (opto)electronic devices.

  20. A novel absorptive thin film for laser welding in optoelectronic device capsulation

    Institute of Scientific and Technical Information of China (English)

    JIANG Shao-ji; JIN Tao; LI Wei-duo; WANG He-zhou

    2005-01-01

    A kind of absorptive thin film was designed and used in laser welding of SiO2, Si and LiNbO3. This absorptive thin film of three-layer metal-dielectric-metal structure is designed for further reducing the high reflectance of the Nd:YAG laser beam on the surface of the tin layer that is utilized as solder between the transparent parent materials. The actual absorption of laser energy in experiment exceeds 99%. This combination of absorber and solder transformed the laser energy into heat efficiently and decreased the minimum necessary incident laser power transmitting through the transparent parent materials. As a result, the damage of the parent materials, which is suffered from laser transmission, was avoided; On the other hand, mechanical stability of the welded materials had been improved. Experiment had been made to show the difference between welding with and without the absorptive thin film.

  1. Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

    Science.gov (United States)

    Jarad, Amer N.; Ibrahim, Kamarulazizi; Ahmed, Nasser M.

    2016-07-01

    In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10-5 (Ω.cm)-1, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

  2. Epitaxial Technologies for SiGeSn High Performance Optoelectronic Devices

    Science.gov (United States)

    2015-04-29

    a) (b) (c) Fig. 24 (a) Schematic cross -section of a GeSn/Si APD with a SACM structure and its internal electric field distribution. (b...shrinkage has been observed in heavily doped n-type samples. GeSn samples have been fabricated into photoconductive detectors, avalanche photo diodes , and...light-emitting diodes (LEDs) and in-depth study has been conducted. The responsivity of 1.63 A/W at 1.55 μm has been achieved with a Ge0.9Sn0.1

  3. Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

    Science.gov (United States)

    Faye, D. Nd.; Fialho, M.; Magalhães, S.; Alves, E.; Ben Sedrine, N.; Rodrigues, J.; Correia, M. R.; Monteiro, T.; Boćkowski, M.; Hoffmann, V.; Weyers, M.; Lorenz, K.

    2016-07-01

    An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical properties of the p-n junction deteriorate possibly due to the formation of conducting paths along dislocations during the extreme annealing conditions.

  4. Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices

    Science.gov (United States)

    Rishinaramangalam, Ashwin K.; Ul Masabih, Saadat Mishkat; Fairchild, Michael N.; Wright, Jeremy B.; Shima, Darryl M.; Balakrishnan, Ganesh; Brener, Igal; Brueck, S. R. J.; Feezell, Daniel F.

    2015-05-01

    We demonstrate the growth of ordered arrays of nonpolar core-shell nanowalls and semipolar core-shell pyramidal nanostripes on c-plane (0001) sapphire substrates using selective-area epitaxy and metal organic chemical vapor deposition. The nanostructure arrays are controllably patterned into LED mesa regions, demonstrating a technique to impart secondary lithography features into the arrays. We study the dependence of the nanostructure cores on the epitaxial growth conditions and show that the geometry and morphology are strongly influenced by growth temperature, V/III ratio, and pulse interruption time. We also demonstrate the growth of InGaN quantum well shells on the nanostructures and characterize the structures by using micro-photoluminescence and cross-section scanning tunneling electron microscopy.

  5. Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

    Science.gov (United States)

    2007-03-01

    preparation. 12 Invited talks: American Institute of Chemical Engineers’ National Meeting, San Francisco, Nov. 2006. Instituto de Investigaciones en...Summer School, International Center for Materials Research, UCSB, Aug., 2006. Centro de Investigación y Desarrollo, Network for Colloidal Systems

  6. Size effect on organic optoelectronics devices: Example of photovoltaic cell efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, A.K. [PPF Cellules solaires photovoltaiques plastiques, Laboratoire POMA, UMR-CNRS 6136, Universite d' Angers, 2 Bd Lavoisier, 49045 Angers (France); Nunzi, J.M. [PPF Cellules solaires photovoltaiques plastiques, Laboratoire POMA, UMR-CNRS 6136, Universite d' Angers, 2 Bd Lavoisier, 49045 Angers (France); Departments of Chemistry and Physics at Queen' s University, Kingston K7L 3N6, Ontario (Canada)], E-mail: nunjijm@queensu.ca; Ratier, B. [XLim Institute of research, UMR-CNRS 6172, Faculte des Sciences de l' Universite de Limoges, 123 Avenue Albert Thomas, 87060 Limoges (France); Moliton, A. [XLim Institute of research, UMR-CNRS 6172, Faculte des Sciences de l' Universite de Limoges, 123 Avenue Albert Thomas, 87060 Limoges (France)], E-mail: andre.moliton@unilim.fr

    2008-02-18

    Electromagnetic study of organic photovoltaic cells design shows that electrical parameters depend drastically on the active area geometry: we theoretically show that electrical parameters are altered when the cell length becomes greater than one centimeter. Experimental verification is provided with simple molecular heterojunction cells with areas from 0.03 to 0.78 cm{sup 2}.

  7. Limb volume measurement: from the past methods to optoelectronic technologies, bioimpedance analysis and laser based devices.

    Science.gov (United States)

    Cavezzi, A; Schingale, F; Elio, C

    2010-10-01

    Accurate measurement of limb volume is considered crucial to lymphedema management. Various non-invasive methods may be used and have been validated in recent years, though suboptimal standardisation has been highlighted in different publications.

  8. Experimental Control of a Fast Chaotic Time-Delay Opto-Electronic Device

    Science.gov (United States)

    2003-01-01

    properties that characterize the chaotic dynamics [11]-[17]. In 1990, Ott, Grebogi , and Yorke [18] demonstrated that it is possible to control chaos in...controllers that require less computation in order to minimize latency. The Þrst technique for controlling chaotic systems was proposed by Ott, Grebogi ...dynamical structure from unstable periodic orbits. Phys. Rev. E 64:026213 (9 pages), 2001. [16] Grebogi , C., E. Ott, and J. Yorke. Unstable periodic

  9. Highly stable and flexible silver nanowire-graphene hybrid transparent conducting electrodes for emerging optoelectronic devices.

    Science.gov (United States)

    Lee, Donghwa; Lee, Hyungjin; Ahn, Yumi; Jeong, Youngjun; Lee, Dae-Young; Lee, Youngu

    2013-09-07

    A new AgNW-graphene hybrid transparent conducting electrode (TCE) was prepared by dry-transferring a chemical vapor deposition (CVD)-grown monolayer graphene onto a pristine AgNW TCE. The AgNW-graphene hybrid TCE exhibited excellent optical and electrical properties as well as mechanical flexibility. The AgNW-graphene hybrid TCE showed highly enhanced thermal oxidation and chemical stabilities because of the superior gas-barrier property of the graphene protection layer. Furthermore, the organic solar cells with the AgNW-graphene hybrid TCE showed excellent photovoltaic performance as well as superior long-term stability under ambient conditions.

  10. 75 FR 28060 - In the Matter of Certain Optoelectronic Devices, Components Thereof, and Products Containing the...

    Science.gov (United States)

    2010-05-19

    ... by contacting the Commission's TDD terminal on (202) 205-1810. SUPPLEMENTARY INFORMATION: The... single respondent, Emcore Corporation (``Emcore'') of Albuquerque, New Mexico. On December 7, 2009,...

  11. 75 FR 41891 - In the Matter of Certain Optoelectronic Devices, Components Thereof, and Products Containing the...

    Science.gov (United States)

    2010-07-19

    ... directed against respondent Emcore Corporation (``Emcore'') of Albuquerque, New Mexico. FOR FURTHER... by contacting the Commission's TDD terminal on (202) 205-1810. SUPPLEMENTARY INFORMATION: The... Mexico. On December 7, 2009, the Commission issued notice of its determination not to review...

  12. Strain and Quantum Dots Manipulation in Nitride Compounds for Opto-electronic Devices

    Science.gov (United States)

    2008-02-15

    long wavelength (573–601 nm) InGaN /GaN multiple quantum well light emitting diodes ( LEDs ) grown by metal organic chemical vapor deposition. These...avoid the disintegration of the InGaN quantum wells with high InN content. A redshift is observed for both the green and yellow LEDs upon decreasing...Development of Yellow and White LED’s Using InGaN -based Multi- Quantum Well Structures” P. T. Barlettaa, E. A. Berkmana, A. M. Emarab, M. J

  13. Superconducting YBa2Cu3O7 films for novel (opto)electronic device structures

    Science.gov (United States)

    Pavuna, D.; Dwir, B.; Gauzzi, A.; James, J. H.; Kellett, B. J.

    1991-02-01

    This short overview briefly summarizes the most important parameters for successful preparation and associated properties of thin films of YBa2Cu3O(7-delta) (YBCO) superconductors. The principles are illustrated by using the example of monotarget ion beam sputtering technique: YBCO films grown in situ on SrTiO3 show Tc(onset) = 92 K and Tco = 91 K. Magnetron sputtering, E-beam evaporation, laser ablation and molecular beam epitaxy are discussed. In situ ion beam sputtering of YBCO on Si and GaAs substrates with intermediate, conducting Indium Tin Oxide (ITO) buffer layers is also presented. Uniform, textured YBCO films on ITO exhibit Tc(onset) at 92 K and Tco at 68 K and 60 K on Si and GaAs substrates, respectively; the latter is the highest Tc reported on GaAs. YBCO/ITO films exhibit metallic resistivity behavior. Finally, the performance of a simple optical bolometer demonstrated on YBCO films and the results of tunneling measurements on the window-type YBCO-Pb tunnel junctions are discussed.

  14. Electronic GaAs-on-Silicon Material for Advanced High-Speed Optoelectronic Devices

    Science.gov (United States)

    1991-01-01

    Japanese Journal of Applied Physics 28,3 (March 1989) 440-445. 6. T. Nishinaga, T. Nakano, and S. Zhang, "Epitaxial Lateral...Overgrowth of GaAs by LPE," Japanese Journal of Applied Physics 27 (1988) L964-L967. 7. S. Zhang and T. Nishinaga, "LPE Lateral Overgrowth of GaP...34 Japanese Journal of Applied Physics 29,3 (March 1990) 545-550. 8. "Process Challenges in Compound Semiconductors," Report of the

  15. Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

    Energy Technology Data Exchange (ETDEWEB)

    Jarad, Amer N., E-mail: amer78malay@yahoo.com.my; Ibrahim, Kamarulazizi, E-mail: kamarul@usm.my; Ahmed, Nasser M., E-mail: nas-tiji@yahoo.com [Nano-optoelectronic Research and Technology Laboratory School of physics, University of Sains Malaysia, 11800 Pulau Pinang (Malaysia)

    2016-07-06

    In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10{sup −5} (Ω.cm){sup −1}, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

  16. Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Faye, D. Nd.; Fialho, M.; Magalhães, S.; Alves, E. [IPFN, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela LRS (Portugal); Ben Sedrine, N.; Rodrigues, J.; Correia, M.R.; Monteiro, T. [Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Boćkowski, M. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Hoffmann, V.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin (Germany); Lorenz, K., E-mail: lorenz@ctn.tecnico.ulisboa.pt [IPFN, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela LRS (Portugal)

    2016-07-15

    An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical properties of the p–n junction deteriorate possibly due to the formation of conducting paths along dislocations during the extreme annealing conditions.

  17. Perovskite single crystals and thin films for optoelectronic devices (Conference Presentation)

    Science.gov (United States)

    Li, Gang; Han, Qifeng; Yang, Yang; Bae, Sang-Hoon; Sun, Pengyu

    2016-09-01

    Hybrid organolead trihalide perovskite (OTP) solar cells have developed as a promising candidate in photovoltaics due to their excellent properties including a direct bandgap, strong absorption coefficient, long carrier lifetime, and high mobility. Most recently, formamidinium (NH2CH=NH2+ or FA) lead iodide (FAPbI3) has attracted significant attention due to several advantages: (1) the larger organic FA cation can replace the MA cation and form a more symmetric crystal structure, (2) the smaller bandgap of FAPbI3 allows for near infrared (NIR) absorption, and (3) FAPbI3 has an elevated decomposition temperature and thus potential to improve stability. Single crystals provide an excellent model system to study the intrinsic electrical and optical properties of these materials due to their high purity, which is particularly important to understand the limits of these materials. In this work, we report the growth of large ( 5 millimeter size) single crystal FAPbI3 using a novel liquid based crystallization method. The single crystal FAPbI3 demonstrated a δ-phase to α-phase transition with a color change from yellow to black when heated to 185°C within approximately two minutes. The crystal structures of the two phases were identified and the PL emission peak of the α-phase FAPbI3 (820 nm) shows clear red-shift compared to the FAPbI3 thin film (805 nm). The FAPbI3 single crystal shows a long carrier lifetime of 484 ns, a high carrier mobility of 4.4 cm2·V-1·s-1, and even more interestingly a conductivity of 1.1 × 10-7(ohm·cm)-1, which is approximately one order of magnitude higher than that of the MAPbI3 single crystal. Finally, high performance photoconductivity type photodetectors were successfully demonstrated using the single crystal FAPbI3.

  18. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  19. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    Science.gov (United States)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    This special cluster of Journal of Physics D: Applied Physics reports proceedings from the Frontiers in Semiconductor-Based Devices Symposium, held in honor of the 60th birthday of Professor Pallab Bhattacharya by his former doctoral students. The symposium took place at the University of Michigan, Ann Arbor on 6-7 December 2009. Pallab Bhattacharya has served on the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan, Ann Arbor for 25 years. During this time, he has made pioneering contributions to semiconductor epitaxy, characterization of strained heterostructures, self-organized quantum dots, quantum-dot optoelectronic devices, and integrated optoelectronics. Professor Bhattacharya has been recognized for his accomplishments by membership of the National Academy of Engineering, by chaired professorships (Charles M Vest Distinguished University Professor and James R Mellor Professor of Engineering), and by selection as a Fellow of the IEEE, among numerous other honors and awards. Professor Bhattacharya has also made remarkable contributions in education, including authorship of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition) and the production of 60 PhD students (and counting). In fact, this development of critical human resources is one of the biggest impacts of Professor Bhattacharya's career. His guidance and dedication have shaped the varied professional paths of his students, many of whom currently enjoy successful careers in academia, industry, and government around the world. This special cluster acknowledges the importance of Professor Bhattacharya's influence as all of the contributions are from his former doctoral students. The symposium reflects the significant impact of Professor Bhattacharya's research in that the topics span diverse, critical research areas, including: semiconductor lasers and modulators, nanoscale quantum structure-based devices, flexible CMOS

  20. Systematic ab initio study of half-Heusler materials for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Gruhn, Thomas; Felser, Claudia [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg University, Mainz (Germany)

    2010-07-01

    The development of new, optimized optoelectronic devices depends crucially on the availability of semiconductors with taylored electronic and structural properties. At the moment, the majority of applications is based on a rather small set of semiconducting materials, while many more semiconductors exist in the huge class of ternary compounds. Especially, the class of 8-electron half-Heusler materials comprises a large number semiconducters with various properties. With the help of ab initio density functional theory we have studied essentially all 8-electron half-Heusler compounds that are of technological relevance. For more than 650 compounds we have determined the optimum configuration by varying the lattice constant and permuting the elements over the sublattices. Within this exceptionally large data set we have studied the band structure and the lattice constants as a function of the electronegativities of the elements, the arrangement of the atoms, and the atomic radii. The results are used to select suitable materials for the buffer layer in thin-film solar cells with a Cu(In,Ga)Se{sub 2} (CIGS) absorber layer. Considering the bandgap and the geometrical matching with the CIGS film, we have obtained a set of 29 compounds that are promissing materials for cadmium-free CIGS buffer layer.