WorldWideScience

Sample records for optoelectronic device applications

  1. Organic optoelectronics:materials,devices and applications

    LIU Yi; CUI Tian-hong

    2005-01-01

    The interest in organic materials for optoelectronic devices has been growing rapidly in the last two decades. This growth has been propelled by the exciting advances in organic thin films for displays, low-cost electronic circuits, etc. An increasing number of products employing organic electronic devices have become commercialized, which has stimulated the age of organic optoelectronics. This paper reviews the recent progress in organic optoelectronic technology. First, organic light emitting electroluminescent materials are introduced. Next, the three kinds of most important organic optoelectronic devices are summarized, including light emitting diode, organic photovoltaic cell, and photodetectors. The various applications of these devices are also reviewed and discussed in detail. Finally, the market and future development of optoelectronic devices are also demonstrated.

  2. Lasers and optoelectronics fundamentals, devices and applications

    Maini, Anil K

    2013-01-01

    With emphasis on the physical and engineering principles, this book provides a comprehensive and highly accessible treatment of modern lasers and optoelectronics. Divided into four parts, it explains laser fundamentals, types of lasers, laser electronics & optoelectronics, and laser applications, covering each of the topics in their entirety, from basic fundamentals to advanced concepts. Key features include: exploration of technological and application-related aspects of lasers and optoelectronics, detailing both existing and emerging applications in industry, medical diag

  3. Optoelectronic devices product assurance guideline for space application

    Bensoussan, A.; Vanzi, M.

    2017-11-01

    New opportunities are emerging for the implementation of hardware sub-systems based on OptoElectronic Devices (OED) for space application. Since the end of this decade the main players for space systems namely designers and users including Industries, Agencies, Manufacturers and Laboratories are strongly demanding of adequate strategies to qualify and validate new optoelectronics products and sub-systems [1]. The long term space application mission will require to address either inter-satellite link (free space communication, positioning systems, tracking) or intra-satellite connectivity/flexibility/reconfigurability or high volume of data transfer between equipment installed into payload.

  4. Wonder of nanotechnology quantum optoelectronic devices and applications

    Razeghi, Manijeh; von Klitzing, Klaus

    2013-01-01

    When you look closely, Nature is nanotechnology at its finest. From a single cell, a factory all by itself, to complex systems, such as the nervous system or the human eye, each is composed of specialized nanostructures that exist to perform a specific function. This same beauty can be mirrored when we interact with the tiny physical world that is the realm of quantum mechanics.The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, edited by Manijeh Razeghi, Leo Esaki, and Klaus von Klitzing focuses on the application of nanotechnology to modern semiconductor optoelectr

  5. Integrated graphene-based devices for optoelectronic applications

    Xiao, Sanshui

    Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultralarge absorption bandwidth, and extremely fast material response. Here I present novel integrated grapheneplasmonic waveguide modulator showing high modulation depth, thus giving a promising way...

  6. Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

    Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

    2015-05-01

    The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

  7. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990

    Razeghi, M.

    1991-01-01

    The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry

  8. Advanced light emitting device structures for optoelectronic applications

    Kovac, J.

    2002-01-01

    Several factors are driving the recent development of light emitting devices (LED,s). The most important ones are brightness, available efficiency, architecture form flexibility, rugged construction and low applied voltages. These are contributing to growth in markets such as traffic lights, automotive brake signals and instrument displays, video displays, traffic signals, decorative signs and the many uses of the new white LED-based products. A new developments are directed to various materials used for high brightness HB-LED,s based on AlGaAs (red), AlInGaP (yellow-green to red) and InGaN (blue, green and white) devices. The development of LED,s depends on epitaxial growth advances, mainly molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). As a technology improved, the performace of visible LED,s increased at the rate 10x per decade from less than 0.1 lm/W to the best red and orange LED,s now providing about 100 lm/W. The main engineering challenge is now the extraction or the ability to get all the light out of the chip to where it is needed. This has led to novel changes in the shape of the LED chip and to the replacement of GaAs with transparent GaP substrate throught wafer bonding after the LED has been produced. Most of the focus for nitride devices (InGaN) is to develop improved or new substrate materials to replace sapphire and enable the growth of lower defect density materials. Organic LED,s (OLED,s) have been undergone dramatic improvements in performace in the last five years. Two main technologies for OLED,s have emerged in the last decade, either based on conjaguated polymers, or sublimed films of small molecules. Recent improvements have taken OLED,s to luminous efficiency greater than 20 lm/W. However, in contrast to conventional LED,s, OLED,s share many of the properties associated with other organic substances and polymers. They allow more design flexibility than inorganic LED,s and thus lead to the high

  9. Deformable paper origami optoelectronic devices

    He, Jr-Hau

    2017-01-19

    Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a deformable pattern. Thin electrode layers and semiconductor nanowire layers can be attached to the substrate, creating the optoelectronic device. The devices can be highly deformable, e.g. capable of undergoing strains of 500% or more, bending angles of 25° or more, and/or twist angles of 270° or more. Methods of making the deformable optoelectronic devices and methods of using, e.g. as a photodetector, are also provided.

  10. Deformable paper origami optoelectronic devices

    He, Jr-Hau; Lin, Chun-Ho

    2017-01-01

    Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a

  11. GaN nano-membrane for optoelectronic and electronic device applications

    Ooi, Boon S.

    2014-01-01

    The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

  12. Nanocellulose-based Translucent Diffuser for Optoelectronic Device Applications with Dramatic Improvement of Light Coupling.

    Wu, Wei; Tassi, Nancy G; Zhu, Hongli; Fang, Zhiqiang; Hu, Liangbing

    2015-12-09

    Nanocellulose is a biogenerated and biorenewable organic material. Using a process based on 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO)/NaClO/NaBr system, a highly translucent and light-diffusive film consisting of many layers of nanocellulose fibers and wood pulp microfibers was made. The film demonstrates a combination of large optical transmittance of ∼90% and tunable diffuse transmission of up to ∼78% across the visible and near-infrared spectra. The detailed characterizations of the film indicate the combination of high optical transmittance and haze is due to the film's large packing density and microstructured surface. The superior optical properties make the film a translucent light diffuser and applicable for improving the efficiencies of optoelectronic devices such as thin-film silicon solar cells and organic light-emitting devices.

  13. Radiation effects in optoelectronic devices

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given

  14. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

  15. Organic 'Plastic' Optoelectronic Devices

    Sariciftci, N.S.

    2006-01-01

    Recent developments on conjugated polymer based photovoltaic diodes and photoactive organic field effect transistors (photOFETs) are discussed. The photophysics of such devices is based on the photoinduced charge transfer from donor type semiconducting conjugated polymers onto acceptor type conjugated polymers or acceptor molecules such as Buckminsterfullerene, C 6 0. Potentially interesting applications include sensitization of the photoconductivity and photovoltaic phenomena as well as photoresponsive organic field effect transistors (photOFETs). Furthermore, organic polymeric/inorganic nanoparticle based 'hybrid' solar cells will be discussed. This talk gives an overview of materials' aspect, charge-transport, and device physics of organic diodes and field-effect transistors. Furthermore, due to the compatibility of carbon/hydrogen based organic semiconductors with organic biomolecules and living cells there can be a great opportunity to integrate such organic semiconductor devices (biOFETs) with the living organisms. In general the largely independent bio/lifesciences and information technology of today, can be thus bridged in an advanced cybernetic approach using organic semiconductor devices embedded in bio-lifesciences. This field of bio-organic electronic devices is proposed to be an important mission of organic semiconductor devices

  16. Electronic and optoelectronic device applications based on ReS2

    Liu, Erfu; Long, Mingsheng; Wang, Yaojia; Pan, Yiming; Ho, Chinghwa; Wang, Baigeng; Miao, Feng

    Rhenium disulfide (ReS2) is a unique semiconducting TMD with distorted 1T structure and weak interlayer coupling. We have previously investigated its in-plane anisotropic property and electronic applications on FET and digital inverters. In this talk, we will present high responsivity phototransistors based on few-layer ReS2. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is one of the highest value among individual two-dimensional materials with similar device structures. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. The existence of trap states is proved by temperature dependent transport measurements. It further enables the detection of weak signals. Our studies underscore ReS2 as a promising material for future electronic and sensitive optoelectronic applications.

  17. One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application

    Luo, Lin-Bao; Wang, Xian-He; Xie, Chao; Li, Zhong-Jun; Lu, Rui; Yang, Xiao-Bao; Lu, Jian

    2014-11-01

    In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 [InlineEquation not available: see fulltext.] 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm2V-1 s-1 and hole concentration of 1.34 × 1018 cm-3, respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 102 A W-1, 3.95 × 102 and 6.38 × 1011 cm Hz1/2 W-1, respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices.

  18. Modeling of Optoelectronic Devices

    Li, Jian-Zhong; Woo, Alex C. (Technical Monitor)

    2000-01-01

    Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.

  19. RIR-MAPLE deposition of conjugated polymers and hybrid nanocomposites for application to optoelectronic devices

    Stiff-Roberts, Adrienne D.; Pate, Ryan; McCormick, Ryan; Lantz, Kevin R.

    2012-01-01

    Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a variation of pulsed laser deposition that is useful for organic-based thin films because it reduces material degradation by selective absorption of infrared radiation in the host matrix. A unique emulsion-based RIR-MAPLE approach has been developed that reduces substrate exposure to solvents and provides controlled and repeatable organic thin film deposition. In order to establish emulsion-based RIR-MAPLE as a preferred deposition technique for conjugated polymer or hybrid nanocomposite optoelectronic devices, studies have been conducted to demonstrate the value added by the approach in comparison to traditional solution-based deposition techniques, and this work will be reviewed. The control of hybrid nanocomposite thin film deposition, and the photoconductivity in such materials deposited using emulsion-based RIR-MAPLE, will also be reviewed. The overall result of these studies is the demonstration of emulsion-based RIR-MAPLE as a viable option for the fabrication of conjugated polymer and hybrid nanocomposite optoelectronic devices that could yield improved device performance.

  20. Mechano-chemical degradation of flexible electrodes for optoelectronic device applications

    Bejitual, T.S.; Morris, N.J.; Cronin, S.D.; Cairns, D.R.; Sierros, K.A.

    2013-01-01

    The electrical, optical, and structural integrity of flexible transparent electrodes is of paramount importance in the design and fabrication of optoelectronic devices such as organic light emitting diodes, liquid crystal displays, touch panels, solar cells, and solid-state lighting. The electrodes may corrode due to acid-containing pressure sensitive adhesives present in the device stacks. In addition, structural failure may occur due to external applied loading. The combined action and further accumulation of both repeated mechanical loading and corrosion can aggravate the loss of functionality of the electrodes. In this study we investigate, using the design of experimental methods, the effects of corrosion, applied mechanical strain, film thickness, and number of bending cycles on the electrical and structural integrity of indium tin oxide (ITO) and carbon nanotube (CNT) films both coated on polyethylene terephthalate (PET) substrates. In situ electrical resistance measurements suggest that fatigue-corrosion is found to be the most critical failure mode for the ITO-based coatings. For example, the change in ITO electrical resistance increase under fatigue-corrosion (1% strain, 150,000 cycles) is 5.8 times higher than that of fatigue mode alone. On the other hand, a minimum change in electrical resistance of the CNT-based electrodes is found when applying the same conditions. - Highlights: • Combined mechano-chemical effects on electrode durability. • CNT-based electrodes outperform ITO counterparts. • Importance of combined fatigue and corrosion action on device reliability

  1. Mechano-chemical degradation of flexible electrodes for optoelectronic device applications

    Bejitual, T.S.; Morris, N.J.; Cronin, S.D.; Cairns, D.R.; Sierros, K.A., E-mail: kostas.sierros@mail.wvu.edu

    2013-12-31

    The electrical, optical, and structural integrity of flexible transparent electrodes is of paramount importance in the design and fabrication of optoelectronic devices such as organic light emitting diodes, liquid crystal displays, touch panels, solar cells, and solid-state lighting. The electrodes may corrode due to acid-containing pressure sensitive adhesives present in the device stacks. In addition, structural failure may occur due to external applied loading. The combined action and further accumulation of both repeated mechanical loading and corrosion can aggravate the loss of functionality of the electrodes. In this study we investigate, using the design of experimental methods, the effects of corrosion, applied mechanical strain, film thickness, and number of bending cycles on the electrical and structural integrity of indium tin oxide (ITO) and carbon nanotube (CNT) films both coated on polyethylene terephthalate (PET) substrates. In situ electrical resistance measurements suggest that fatigue-corrosion is found to be the most critical failure mode for the ITO-based coatings. For example, the change in ITO electrical resistance increase under fatigue-corrosion (1% strain, 150,000 cycles) is 5.8 times higher than that of fatigue mode alone. On the other hand, a minimum change in electrical resistance of the CNT-based electrodes is found when applying the same conditions. - Highlights: • Combined mechano-chemical effects on electrode durability. • CNT-based electrodes outperform ITO counterparts. • Importance of combined fatigue and corrosion action on device reliability.

  2. New Development of Membrane Base Optoelectronic Devices

    Leon Hamui

    2017-12-01

    Full Text Available It is known that one factor that affects the operation of optoelectronic devices is the effective protection of the semiconductor materials against environmental conditions. The permeation of atmospheric oxygen and water molecules into the device structure induces degradation of the electrodes and the semiconductor. As a result, in this communication we report the fabrication of semiconductor membranes consisting of Magnesium Phthalocyanine-allene (MgPc-allene particles dispersed in Nylon 11 films. These membranes combine polymer properties with organic semiconductors properties and also provide a barrier effect for the atmospheric gas molecules. They were prepared by high vacuum evaporation and followed by thermal relaxation technique. For the characterization of the obtained membranes, Fourier-transform infrared spectroscopy (FT-IR, scanning electron microscopy (SEM, and energy dispersive spectroscopy (EDS were used to determine the chemical and microstructural properties. UV-ViS, null ellipsometry, and visible photoluminescence (PL at room temperature were used to characterize the optoelectronic properties. These results were compared with those obtained for the organic semiconductors: MgPc-allene thin films. Additionally, semiconductor membranes devices have been prepared, and a study of the device electronic transport properties was conducted by measuring electrical current density-voltage (J-V characteristics by four point probes with different wavelengths. The resistance properties against different environmental molecules are enhanced, maintaining their semiconductor functionality that makes them candidates for optoelectronic applications.

  3. Radiation effects in optoelectronic devices

    Barnes, C.E.

    1977-03-01

    A summary is given of studies on radiation effects in light-emitting diodes, laser diodes, detectors, optical isolators and optical fibers. It is shown that the study of radiation damage in these devices can provide valuable information concerning the nature of the devices themselves, as well as methods of hardening these devices for applications in radiation environments

  4. Metamaterial mirrors in optoelectronic devices

    Esfandyarpour, Majid

    2014-06-22

    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

  5. Metamaterial mirrors in optoelectronic devices

    Esfandyarpour, Majid; Garnett, Erik C.; Cui, Yi; McGehee, Michael D.; Brongersma, Mark L.

    2014-01-01

    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror († = €) to that of a perfect magnetic mirror († = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band. © 2014 Macmillan Publishers Limited.

  6. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

    Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

    2015-01-01

    Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

  7. Perovskite Materials: Solar Cell and Optoelectronic Applications

    Yang, Bin [ORNL; Geohegan, David B [ORNL; Xiao, Kai [ORNL

    2017-01-01

    Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure, and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.

  8. Nano crystals for Electronic and Optoelectronic Applications

    Zhu, T.; Cloutier, S.G.; Ivanov, I; Knappenberger Jr, K.L.; Robel, I.; Zhang, F

    2012-01-01

    Electronic and optoelectronic devices, from computers and smart cell phones to solar cells, have become a part of our life. Currently, devices with featured circuits of 45 nm in size can be fabricated for commercial use. However, further development based on traditional semiconductor is hindered by the increasing thermal issues and the manufacturing cost. During the last decade, nano crystals have been widely adopted in various electronic and optoelectronic applications. They provide alternative options in terms of ease of processing, low cost, better flexibility, and superior electronic/optoelectronic properties. By taking advantage of solution-processing, self-assembly, and surface engineering, nano crystals could serve as new building blocks for low-cost manufacturing of flexible and large area devices. Tunable electronic structures combined with small exciton binding energy, high luminescence efficiency, and low thermal conductivity make nano crystals extremely attractive for FET, memory device, solar cell, solid-state lighting/display, photodetector, and lasing applications. Efforts to harness the nano crystal quantum tunability have led to the successful demonstration of many prototype devices, raising the public awareness to the wide range of solutions that nano technology can provide for an efficient energy economy. This special issue aims to provide the readers with the latest achievements of nano crystals in electronic and optoelectronic applications, including the synthesis and engineering of nano crystals towards the applications and the corresponding device fabrication, characterization and computer modeling.

  9. Optoelectronic Devices Advanced Simulation and Analysis

    Piprek, Joachim

    2005-01-01

    Optoelectronic devices transform electrical signals into optical signals and vice versa by utilizing the sophisticated interaction of electrons and light within micro- and nano-scale semiconductor structures. Advanced software tools for design and analysis of such devices have been developed in recent years. However, the large variety of materials, devices, physical mechanisms, and modeling approaches often makes it difficult to select appropriate theoretical models or software packages. This book presents a review of devices and advanced simulation approaches written by leading researchers and software developers. It is intended for scientists and device engineers in optoelectronics, who are interested in using advanced software tools. Each chapter includes the theoretical background as well as practical simulation results that help to better understand internal device physics. The software packages used in the book are available to the public, on a commercial or noncommercial basis, so that the interested r...

  10. Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

    Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

    2016-06-01

    Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Recent advances in flexible and wearable organic optoelectronic devices

    Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

    2018-01-01

    Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

  12. Graphene optoelectronics synthesis, characterization, properties, and applications

    bin M Yusoff, Abdul Rashid

    2014-01-01

    This first book on emerging applications for this innovative material gives an up-to-date account of the many opportunities graphene offers high-end optoelectronics.The text focuses on potential as well as already realized applications, discussing metallic and passive components, such as transparent conductors and smart windows, as well as high-frequency devices, spintronics, photonics, and terahertz devices. Also included are sections on the fundamental properties, synthesis, and characterization of graphene. With its unique coverage, this book will be welcomed by materials scientists, solid-

  13. Metal Complexes for Organic Optoelectronic Applications

    Huang, Liang

    Organic optoelectronic devices have drawn extensive attention by over the past two decades. Two major applications for Organic optoelectronic devices are efficient organic photovoltaic devices(OPV) and organic light emitting diodes (OLED). Organic Solar cell has been proven to be compatible with the low cost, large area bulk processing technology and processed high absorption efficiencies compared to inorganic solar cells. Organic light emitting diodes are a promising approach for display and solid state lighting applications. To improve the efficiency, stability, and materials variety for organic optoelectronic devices, several emissive materials, absorber-type materials, and charge transporting materials were developed and employed in various device settings. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. In this thesis, Chapter 1 provides an introduction to the background knowledge of OPV and OLED research fields presented. Chapter 2 discusses new porphyrin derivatives- azatetrabenzylporphyrins for OPV and near infrared OLED applications. A modified synthetic method is utilized to increase the reaction yield of the azatetrabenzylporphyrin materials and their photophysical properties, electrochemical properties are studied. OPV devices are also fabricated using Zinc azatetrabenzylporphyrin as donor materials. Pt(II) azatetrabenzylporphyrin were also synthesized and used in near infra-red OLED to achieve an emission over 800 nm with reasonable external quantum efficiencies. Chapter 3, discusses the synthesis, characterization, and device evaluation of a series of tetradentate platinum and palladium complexesfor single doped white OLED applications and RGB white OLED applications. Devices employing some of the developed emitters demonstrated impressively high external quantum efficiencies within the range of 22%-27% for various emitter concentrations. And the palladium complex, i

  14. Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

    Jaya, T. P.; Pradyumnan, P. P.

    2017-12-01

    Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

  15. Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

    Jiang, Nian

    III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

  16. Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices

    Berry Ann, N. J.; Rodak, L. E.; Kasarla, Kalyan; Yang, Nanying; Korakakis, D.

    2005-10-01

    In this research effort, epitaxial lateral overgrowth (ELOG) of GaN on sapphire was performed by low-pressure metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor. All ELOG growths were stopped prior to complete coalescence, and the resulting cross-sections were characterized by scanning electron microscopy (SEM). Both vertical {1120} and inclined sidewalls were observed. Inclined {112n}sidewalls of various angles (n 2-2.2) were found as previously reported in the literature1. Both one-step and two-step ELOG processes were used to control the overgrowth geometry. It was confirmed that sidewall formation and growth rates are closely correlated with multiple parameters including temperature and V/III ratio1. It was also found that substrate rotation greatly influences sidewall evolution and vertical growth rate. A conceptual model was begun to completely describe the ELOG process in a horizontal reactor. It is speculated that the different sidewalls observed as a function of substrate orientation result from variation in the local V/III ratio. Once developed, the final model will be used to control the sidewalls in the growth of ELOG structures for the fabrication of novel optoelectronic devices.

  17. Organic Optoelectronic Devices Employing Small Molecules

    Fleetham, Tyler Blain

    Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt

  18. Hybrid optoelectronic device with multiple bistable outputs

    Costazo-Caso, Pablo A; Jin Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.are, E-mail: granieri@rose-hulma.edu, E-mail: siahmako@rose-hulma.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

    2011-01-01

    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  19. Ultrafast characterization of optoelectronic devices and systems

    Zheng, Xuemei

    The recent fast growth in high-speed electronics and optoelectronics has placed demanding requirements on testing tools. Electro-optic (EO) sampling is a well-established technique for characterization of high-speed electronic and optoelectronic devices and circuits. However, with the progress in device miniaturization, lower power consumption (smaller signal), and higher throughput (higher clock rate), EO sampling also needs to be updated, accordingly, towards better signal-to-noise ratio (SNR) and sensitivity, without speed sacrifice. In this thesis, a novel EO sampler with a single-crystal organic 4-dimethylamino-N-methy-4-stilbazolium tosylate (DAST) as the EO sensor is developed. The system exhibits sub-picosecond temporal resolution, sub-millivolt sensitivity, and a 10-fold improvement on SNR, compared with its LiTaO3 counterpart. The success is attributed to the very high EO coefficient, the very low dielectric constant, and the fast response, coming from the major contribution of the pi-electrons in DAST. With the advance of ultrafast laser technology, low-noise and compact femtosecond fiber lasers have come to maturation and become light-source options for ultrafast metrology systems. We have successfully integrated a femtosecond erbium-doped-fiber laser into an EO sampler, making the system compact and very reliable. The fact that EO sampling is essentially an impulse-response measurement process, requires integration of ultrashort (sub-picosecond) impulse generation network with the device under test. We have implemented a reliable lift-off and transfer technique in order to obtain epitaxial-quality freestanding low-temperature-grown GaAs (LT-GaAs) thin-film photo-switches, which can be integrated with many substrates. The photoresponse of our freestanding LT-GaAs devices was thoroughly characterized with the help of our EO sampler. As fast as 360 fs full-width-at-half-maximum (FWHM) and >1 V electrical pulses were obtained, with quantum efficiency

  20. Introduction to organic electronic and optoelectronic materials and devices

    Sun, Sam-Shajing

    2008-01-01

    Introduction to Optoelectronic Materials, N. Peyghambarian and M. Fallahi Introduction to Optoelectronic Device Principles, J. Piprek Basic Electronic Structures and Charge Carrier Generation in Organic Optoelectronic Materials, S.-S. Sun Charge Transport in Conducting Polymers, V.N. Prigodin and A.J. Epstein Major Classes of Organic Small Molecules for Electronic and Optoelectronics, X. Meng, W. Zhu, and H. Tian Major Classes of Conjugated Polymers and Synthetic Strategies, Y. Li and J. Hou Low Energy Gap, Conducting, and Transparent Polymers, A. Kumar, Y. Ner, and G.A. Sotzing Conjugated Polymers, Fullerene C60, and Carbon Nanotubes for Optoelectronic Devices, L. Qu, L. Dai, and S.-S. Sun Introduction of Organic Superconducting Materials, H. Mori Molecular Semiconductors for Organic Field-Effect Transistors, A. Facchetti Polymer Field-Effect Transistors, H.G.O. Sandberg Organic Molecular Light-Emitting Materials and Devices, F. So and J. Shi Polymer Light-Emitting Diodes: Devices and Materials, X. Gong and ...

  1. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  2. A simple encapsulation method for organic optoelectronic devices

    Sun Qian-Qian; An Qiao-Shi; Zhang Fu-Jun

    2014-01-01

    The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells (PSCs). The power conversion efficiencies (PCE) of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices. (atomic and molecular physics)

  3. Optical Near-field Interactions and Forces for Optoelectronic Devices

    Kohoutek, John Michael

    Throughout history, as a particle view of the universe began to take shape, scientists began to realize that these particles were attracted to each other and hence came up with theories, both analytical and empirical in nature, to explain their interaction. The interaction pair potential (empirical) and electromagnetics (analytical) theories, both help to explain not only the interaction between the basic constituents of matter, such as atoms and molecules, but also between macroscopic objects, such as two surfaces in close proximity. The electrostatic force, optical force, and Casimir force can be categorized as such forces. A surface plasmon (SP) is a collective motion of electrons generated by light at the interface between two mediums of opposite signs of dielectric susceptibility (e.g. metal and dielectric). Recently, surface plasmon resonance (SPR) has been exploited in many areas through the use of tiny antennas that work on similar principles as radio frequency (RF) antennas in optoelectronic devices. These antennas can produce a very high gradient in the electric field thereby leading to an optical force, similar in concept to the surface forces discussed above. The Atomic Force Microscope (AFM) was introduced in the 1980s at IBM. Here we report on its uses in measuring these aforementioned forces and fields, as well as actively modulating and manipulating multiple optoelectronic devices. We have shown that it is possible to change the far field radiation pattern of an optical antenna-integrated device through modification of the near-field of the device. This modification is possible through change of the local refractive index or reflectivity of the "hot spot" of the device, either mechanically or optically. Finally, we have shown how a mechanically active device can be used to detect light with high gain and low noise at room temperature. It is the aim of several of these integrated and future devices to be used for applications in molecular sensing

  4. Opto-electronic devices from block copolymers and their oligomers.

    Hadziioannou, G

    1997-01-01

    This paper presents research activities towards the development of polymer materials and devices for optoelectronics, An approach to controlling the conjugation length and transferring the luminescence properties of organic molecules to polymers through black copolymers containing well-defined

  5. Exfoliating and Dispersing Few-Layered Graphene in Low-Boiling-Point Organic Solvents towards Solution-Processed Optoelectronic Device Applications.

    Zhang, Lu; Miao, Zhongshuo; Hao, Zhen; Liu, Jun

    2016-05-06

    With normal organic surfactants, graphene can only be dispersed in water and cannot be dispersed in low-boiling-point organic solvents, which hampers its application in solution-processed organic optoelectronic devices. Herein, we report the exfoliation of graphite into graphene in low-boiling-point organic solvents, for example, methanol and acetone, by using edge-carboxylated graphene quantum dots (ECGQD) as the surfactant. The great capability of ECGQD for graphene dispersion is due to its ultralarge π-conjugated unit that allows tight adhesion on the graphene surface through strong π-π interactions, its edge-carboxylated structure that diminishes the steric effects of the oxygen-containing functional groups on the basal plane of ECGQD, and its abundance of carboxylic acid groups for solubility. The graphene dispersion in methanol enables the application of graphene:ECGQD as a cathode interlayer in polymer solar cells (PSCs). Moreover, the PSC device performance of graphene:ECGQD is better than that of Ca, the state-of-the-art cathode interlayer material. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Growing perovskite into polymers for easy-processable optoelectronic devices

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  7. Materials for optoelectronic devices, OEICs and photonics

    Schloetterer, H.; Quillec, M.; Greene, P.D.; Bertolotti, M.

    1991-01-01

    The aim of the contributors in this volume is to give a current overview on the basic properties of nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques from growth (LPE to MOMBE) and for processing from surface passivation to ion beams. Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic materials development, as well as indicating the growth techniques that will be in use around the year 2000

  8. Research on the application of optoelectronics to nuclear power plants

    Shirosaki, Hidekazu; Mitsuda, Hiromichi; Kurata, Toshikazu; Soramoto, Seiki; Maekawa, Tatsuyuki.

    1995-01-01

    Optoelectronics, which is based on technologies such as laser diodes and optical fibers, is approaching the realm of practical application in the fields of optical fiber communications and compact disks etc,. In addition, laser enrichment, a type of uranium enrichment technique used in the nuclear field, can also be regarded as a product of optoelectronics. Application of optoelectronics in a wide range of fields is likely to continue in the future, and research is being conducted on coherent optical communication, optical integrated circuits, optical computers and other subjects in hopes of attaining practical application of these technologies in the future. On the other hand, digital control equipment and other related devices have been installed and data transfer using optical fibers has been implemented on a partial basis at nuclear power plants, and optoelectronics is anticipated to be applied on an even broader scale in the future, thereby creating the potential for improving plant reliability. In this research, we conducted an investigative study of technologies relating to optoelectronics, and proposed a remote monitoring system for manually operated valves that employs optical switches. Moreover, we conducted theoretical verification tests on the proposed system and carried out a feasibility study relating to application to nuclear power plants. As a result, the proposed system was found to be effective, and confirmed to have the potential of realization as a valve switching monitoring system. (author)

  9. Reduced Graphene Oxide-Cadmium Zinc Sulfide Nanocomposite with Controlled Band Gap for Large-Area Thin-Film Optoelectronic Device Application

    Ibrahim, Sk; Chakraborty, Koushik; Pal, Tanusri; Ghosh, Surajit

    2017-12-01

    Herein, we report the one pot single step solvothermal synthesis of reduced grapheme oxide-cadmium zinc sulfide (RGO-Cd0.5Zn0.5S) composite. The reduction in graphene oxide (GO), synthesis of Cd0.5Zn0.5S (mentioned as CdZnS in the text) nanorod and decoration of CdZnS nanorods onto RGO sheet were done simultaneously. The structural, morphological and optical properties were studied thoroughly by different techniques, such as XRD, TEM, UV-Vis and PL. The PL intensity of CdZnS nanorods quenches significantly after the attachment of RGO, which confirms photoinduced charge transformation from CdZnS nanorods to RGO sheet through the interface of RGO-CdZnS. An excellent photocurrent generation in RGO-CdZnS thin-film device has been observed under simulated solar light irradiation. The photocurrent as well as photosensitivity increases linearly with the solar light intensity for all the composites. Our study establishes that the synergistic effect of RGO and CdZnS in the composite is capable of getting promising applications in the field of optoelectronic devising.

  10. Integrated NEMS and optoelectronics for sensor applications.

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R. (Symphony Acoustics, Rio Rancho, NM); Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade (Symphony Acoustics, Rio Rancho, NM); Okandan, Murat; Peterson, Kenneth Allen

    2008-01-01

    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  11. Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

    2018-01-08

    engineer next-generation carbon-based optoelectronic and photonic devices with superior performance and capabilities. These devices include carbon...electronics; (4) nanostructured graphene plasmonics; and (5) polymer-nanotube conjugate chemistry . (1) Semiconducting carbon nanotube-based...applications (In Preparation, 2018). (5) Polymer-nanotube conjugate chemistry Conjugated polymers can be exploited as agents for selectively wrapping and

  12. Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics

    Sun, K.

    2011-05-04

    This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

  13. Application of CaCu3Ti4O12 based quadruple perovskites as a promising candidate for optoelectronic devices

    Pal, Kamalesh; Jana, Rajkumar; Dey, Arka; Ray, Partha P.; Seikh, Md Motin; Gayen, Arup

    2018-05-01

    We report the synthesis of nanosized (40-50 nm) CaCu3-xMnxTi4-xMnxO12 (x = 0, 0.5 and 1) quadruple perovskite (QP) semiconductor via a modified combustion method for use as Schottky barrier diode (SBD) at the Al/QP junction. The fabricated SBD is analysed on the basis of thermionic emission theory to observe its quality and some important diode parameters. For insight analysis of charge transport mechanism through metal-semiconductor junction, theory of space charge limited currents is applied and discussed in the light of parameters like carrier concentration, mobility-lifetime product and diffusion length. The Mn-doped exhibit better device performance compared to parent material.

  14. Dental impression technique using optoelectronic devices

    Sinescu, Cosmin; Barua, Souman; Topala, Florin Ionel; Negrutiu, Meda Lavinia; Duma, Virgil-Florin; Gabor, Alin Gabriel; Zaharia, Cristian; Bradu, Adrian; Podoleanu, Adrian G.

    2018-03-01

    INTRODUCTION: The use of Optical Coherence Tomography (OCT) as a non-invasive and high precision quantitative information providing tool has been well established by researches within the last decade. The marginal discrepancy values can be scrutinized in optical biopsy made in three dimensional (3D) micro millimetre scale and reveal detailed qualitative and quantitative information of soft and hard tissues. OCT-based high resolution 3D images can provide a significant impact on finding recurrent caries, restorative failure, analysing the precision of crown preparation, and prosthetic elements marginal adaptation error with the gingiva and dental hard tissues. During the CAD/CAM process of prosthodontic restorations, the circumvent of any error is important for the practitioner and the technician to reduce waste of time and material. Additionally, OCT images help to achieve a new or semi-skilled practitioner to analyse their crown preparation works and help to develop their skills faster than in a conventional way. The aim of this study is to highlight the advantages of OCT in high precision prosthodontic restorations. MATERIALS AND METHODS: 25 preparations of frontal and lateral teeth were performed for 7 different patients. The impressions of the prosthetic fields were obtained both using a conventional optoelectronic system (Apolo Di, Syrona) and a Spectral Domain using OCT (Dental prototype, working at 860 nm). For the conventional impression technique the preparation margins were been prelevated by gingival impregnated cords. No specific treatments were performed by the OCT impression technique. RESULTS: The scanning performed by conventional optoelectronic system proved to be quick and accurate in terms of impression technology. The results were represented by 3D virtual models obtained after the scanning procedure was completed. In order to obtain a good optical impression a gingival retraction cord was inserted between the prepared tooth and the gingival

  15. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    2012-10-30

    ... Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Institution... certain optoelectronic devices for fiber optic communications, components thereof, and products containing... optoelectronic devices for fiber optic communications, components thereof, and products containing the same that...

  16. P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

    Saji, Kachirayil J. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Govt. Victoria College, University of Calicut, Palakkad 678 001 (India); Venkata Subbaiah, Y.P. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Yogi Vemana University, Kadapa, Andhra Pradesh 516003 (India); Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

    2016-04-30

    Tin monoxide (SnO) is considered as one of the most important p-type oxides available to date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) and a direct bandgap (~ 2.8 eV) with quite high hole mobility (~ 7 cm{sup 2}/Vs) values. Moreover, the hole density in these films can be tuned from 10{sup 15}–10{sup 19} cm{sup −3} just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p–n heterostructure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices. - Highlights: • We reviewed recent developments on p-type SnO thin film research. • Discussed the optical and electrical properties of SnO thin films • Bipolar conduction in SnO is discussed. • Optoelectronic properties of SnO–ZnO composite system are discussed. • Proposed SnO–ZnO heterojunction band structure.

  17. Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

    Bingqi Sun

    2018-06-01

    Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

  18. CuPc/C60 heterojunction thin film optoelectronic devices

    Murtaza, Imran; Karimov, Khasan S.; Qazi, Ibrahim

    2010-01-01

    The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C 60 /Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C 60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C 60 , where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. (semiconductor devices)

  19. Laser applications in the electronics and optoelectronics industry in Japan

    Washio, Kunihiko

    1999-07-01

    This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

  20. Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

    Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

    2014-02-21

    The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

  1. Structural, optical and morphological properties of post-growth calcined TiO{sub 2} nanopowder for opto-electronic device application: Ex-situ studies

    Sathyaseelan, B., E-mail: bsseelan03@gmail.com [Dept of Physics, University College of Engineering Arni (A Constituent College of Anna University Chennai) Arni 632326, Tamil Nadu (India); Manikandan, E., E-mail: maniphysics@gmail.com [Central Research Laboratory, Sree Balaji Medical College & Hospital, Bharath University, BIHER, Chrompet, Chennai 600044, Tamil Nadu (India); UNESCO UNISA Africa Chair in Nanosciences & Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Lakshmanan, V. [Dept of Physics, A.C.T College of Engineering & Technology, Nelvoy 603107 Kancheepuram (Dt), Tamil Nadu (India); Baskaran, I. [Dept of Physics, Arignar Anna Government Arts College, Cheyyar 604407, Tamil Nadu (India); Sivakumar, K. [Dept of Physics, Anna University, Chennai 600025, Tamil Nadu (India); Ladchumananandasivam, Rasiah [Dept of Textile Engineering & Post Graduate Programme in Mechanical Engineering Centre of Technology, Federal University of Rio Grande do Norte, Natal (Brazil); Kennedy, J. [UNESCO UNISA Africa Chair in Nanosciences & Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); The MacDiarmid Institute for Advanced Materials and Nanotechnology, PO Box 600, Wellington (New Zealand); Maaza, M., E-mail: maaza@tlabs.ac.za [UNESCO UNISA Africa Chair in Nanosciences & Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa)

    2016-06-25

    Nanocrystalline TiO{sub 2} powders have been selectively prepared by the simple combustion reaction method using urea as a fuel. The crystalline powder was obtained using a silica basin heated directly on a hot plate at 500 °C until self-ignition occurred. After combustion process, the calcined products were obtained by heating the as-prepared powders for 1 h in air atmosphere at various sintering temperatures [500–900 °C]. The obtained nanopowder materials were systematically characterized by X-day diffraction (XRD), micro-Raman, UV–visible absorption (UV–vis), and Fourier transform infrared (FT-IR) spectroscopics. Powder XRD pattern shows the good agreement rutile phase structured TiO{sub 2} and the sharp diffraction peaks indicates good for crystallinity. The size of a symmetry of the nanoparticles have been measured with aid of a scanning electron microscopy (SEM), high resolution transmission electron microscopy (HR-TEM), and Brunauer, Emmett and Teller (BET) surface studies. The crystallinity of the powders was found to increase with respect to calcination temperatures. The average specific surface area of the particle was probed using gas adsorption–desorption measurements. Raman spectroscopy experiment was performed to ascertain the nature of TiO{sub 2} powder quality. UV–vis absorption spectra results showed the changes in the absorption edges of TiO{sub 2} report to increasing the calcinations temperatures. - Highlights: • TiO{sub 2} Nanocrystalline powders were prepared by simple combustion reaction method. • Calcined TiO{sub 2} nanopowder obtained by heating for 1 hr in air atmosphere at 500–900 °C. • Systematic characterization employed by XRD, micro-Raman, Optical, SEM, HRTEM. • The size symmetry of nanoparticles measured by electron microscopes BET methods. • Calcinations raises the crystallinity size enhanced for future opto-electronic devices.

  2. Organic optoelectronics

    Hu, Wenping; Gong, Xiong; Zhan, Xiaowei; Fu, Hongbing; Bjornholm, Thomas

    2012-01-01

    Written by internationally recognized experts in the field with academic as well as industrial experience, this book concisely yet systematically covers all aspects of the topic.The monograph focuses on the optoelectronic behavior of organic solids and their application in new optoelectronic devices. It covers organic electroluminescent materials and devices, organic photonics, materials and devices, as well as organic solids in photo absorption and energy conversion. Much emphasis is laid on the preparation of functional materials and the fabrication of devices, from materials synthesis a

  3. Integrated Optoelectronic Networks for Application-Driven Multicore Computing

    2017-05-08

    AFRL-AFOSR-VA-TR-2017-0102 Integrated Optoelectronic Networks for Application- Driven Multicore Computing Sudeep Pasricha COLORADO STATE UNIVERSITY...AND SUBTITLE Integrated Optoelectronic Networks for Application-Driven Multicore Computing 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-13-1-0110 5c...and supportive materials with innovative architectural designs that integrate these components according to system-wide application needs. 15

  4. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He, Jr-Hau

    2016-01-01

    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via

  5. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

    2016-01-01

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc

  6. Electronic and optoelectronic materials and devices inspired by nature

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  7. Monocrystalline halide perovskite nanostructures for optoelectronic applications

    Khoram, P.

    2018-01-01

    Halide perovskites are a promising class of materials for incorporation in optoelectronics with higher efficiency and lower cost. The solution processability of these materials provides unique opportunities for simple nanostructure fabrication. In the first half of the thesis (chapter 2 and 3) we

  8. CMOS On-Chip Optoelectronic Neural Interface Device with Integrated Light Source for Optogenetics

    Sawadsaringkarn, Y; Kimura, H; Maezawa, Y; Nakajima, A; Kobayashi, T; Sasagawa, K; Noda, T; Tokuda, T; Ohta, J

    2012-01-01

    A novel optoelectronic neural interface device is proposed for target applications in optogenetics for neural science. The device consists of a light emitting diode (LED) array implemented on a CMOS image sensor for on-chip local light stimulation. In this study, we designed a suitable CMOS image sensor equipped with on-chip electrodes to drive the LEDs, and developed a device structure and packaging process for LED integration. The prototype device produced an illumination intensity of approximately 1 mW with a driving current of 2.0 mA, which is expected to be sufficient to activate channelrhodopsin (ChR2). We also demonstrated the functions of light stimulation and on-chip imaging using a brain slice from a mouse as a target sample.

  9. Optoelectronic properties of four azobenzene-based iminopyridine ligands for photovoltaic application

    Aziz El alamy

    2017-11-01

    Full Text Available Because of organic π-conjugated materials’ optoelectronic properties and potential applications in a wide range of electronic and optoelectronic devices, such as organic solar cells, these materials, including both polymers and oligomers, have been widely studied in recent years. This work reposts a theoretical study using the DFT method on four azobenzene-based iminopyridines. The theoretical ground-state geometry, electronic structure and optoelectronic parameters (highest occupied molecular orbital (HOMO, lowest unoccupied molecular orbital (LUMO energy levels, open-circuit voltage (Voc and oscillator strengths (O.S of the studied molecules were obtained using the density functional theory (DFT and time-dependent (TDDFT approaches. The effects of the structure length and substituents on the geometric and optoelectronic properties of these materials are discussed to investigate the relationship between the molecular structure and the optoelectronic properties. The results of this study are consistent with the experimental ones and suggest that these materials as good candidates for use in photovoltaic devices. Keywords: π-conjugated materials, azobenzene, optoelectronic properties, DFT calculations, HOMO-LUMO gap

  10. Light Management in Optoelectronic Devices with Disordered and Chaotic Structures

    Khan, Yasser

    2012-07-01

    With experimental realization, energy harvesting capabilities of chaotic microstructures were explored. Incident photons falling into chaotic trajectories resulted in energy buildup for certain frequencies. As a consequence, many fold enhancement in light trapping was observed. These ellipsoid like chaotic microstructures demonstrated 25% enhancement in light trapping at 450nm excitation and 15% enhancement at 550nm excitation. Optimization of these structures can drive novel chaos-assisted energy harvesting systems. In subsequent sections of the thesis, prospect of broadband light extraction from white light emitting diodes were investigated, which is an unchallenged but quintessential problem in solid-state lighting. Size dependent scattering allows microstructures to interact strongly with narrow-band light. If disorder is introduced in spread and sizes of microstructures, broadband light extraction is possible. A novel scheme with Voronoi tessellation to quantify disorder in physical systems was also introduced, and a link between voronoi disorder and state disorder of statistical mechanics was established. Overall, in this thesis some nascent concepts regarding disorder and chaos were investigated to efficiently manage electromagnetic waves in optoelectronic devices.

  11. Electronic and optoelectronic materials and devices inspired by nature

    Meredith, P; Schwenn, P E; Bettinger, C J; Irimia-Vladu, M; Mostert, A B

    2013-01-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist. (review article)

  12. Characterization of Semiconductor Nanocrystal Assemblies as Components of Optoelectronic Devices

    Malfavon-Ochoa, Mario

    dispersions of core and core/shell NCs will be shown to produce close packed assemblies of NCs forming near-wavelength luminescent superstructures separated in space. We show the dominant contribution of a two-monolayer thick sharp interface CdS shell to the diffraction efficiency, and necessarily the refractive index, of the NCs, independent of core size. Utilization of these gratings as in-coupling elements at various positions within a device architecture are also examined. These new observations were achieved by unprecedented control of NC architecture during dispersion processing, while maintaining high luminescence, made possible by optimized NC surface passivation. These studies enable the formation of new LED architectures, and new optoelectronic devices based on angle resolved, monochromatic fluorescence from diffraction gratings prepared from simple solution processing approaches. Further, the novel observation of angle amplified interfering fluorescence from these features is argued to be a result of long range radiative coupling and superradiance enabled by the monodispersity and high-quality NC surface passivation described herein.

  13. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-01-01

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

  14. Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications

    Romeira, Bruno; Figueiredo, José M. L.; Javaloyes, Julien

    2017-11-01

    With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

  15. 78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    2013-03-14

    ... Fiber Optic Communications, Components Thereof, and Products Containing Same; Commission Determination... United States after importation of certain optoelectronic devices for fiber optic communications... Fiber IP (Singapore) Pte. Ltd. of Singapore (``Avago Fiber IP''); Avago General IP and Avago...

  16. Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

    Catrysse, Peter B.; Fan, Shanhui

    2010-01-01

    We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from

  17. Direct Photolithography on Molecular Crystals for High Performance Organic Optoelectronic Devices.

    Yao, Yifan; Zhang, Lei; Leydecker, Tim; Samorì, Paolo

    2018-05-23

    Organic crystals are generated via the bottom-up self-assembly of molecular building blocks which are held together through weak noncovalent interactions. Although they revealed extraordinary charge transport characteristics, their labile nature represents a major drawback toward their integration in optoelectronic devices when the use of sophisticated patterning techniques is required. Here we have devised a radically new method to enable the use of photolithography directly on molecular crystals, with a spatial resolution below 300 nm, thereby allowing the precise wiring up of multiple crystals on demand. Two archetypal organic crystals, i.e., p-type 2,7-diphenyl[1]benzothieno[3,2- b][1]benzothiophene (Dph-BTBT) nanoflakes and n-type N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) nanowires, have been exploited as active materials to realize high-performance top-contact organic field-effect transistors (OFETs), inverter and p-n heterojunction photovoltaic devices supported on plastic substrate. The compatibility of our direct photolithography technique with organic molecular crystals is key for exploiting the full potential of organic electronics for sophisticated large-area devices and logic circuitries, thus paving the way toward novel applications in plastic (opto)electronics.

  18. Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh (Ch=chalcogen) and La2CdO2Se2

    Hiramatsu, Hidenori; Hirano, Masahiro; Kamioka, Hayato; Ueda, Kazushige; Ohta, Hiromichi; Kamiya, Toshio; Hosono, Hideo

    2006-01-01

    Electronic and optical properties of widegap oxychalcogenides, LaCuOCh (Ch chalcogen) and La 2 CdO 2 Se 2 , are reviewed with a focus on those relevant to their layered crystal structures, including high hole mobility, degenerate p-type conduction, room temperature exciton, and large third order optical nonlinearity. In particular, the widegap p-type metallic conduction was realized in Mg-doped LaCuOSe: the first demonstration among any class of widegap materials including GaN:Mg. Furthermore, we demonstrate the room temperature operation of a blue light-emitting diode using a pn hetero-junction composed of a LaCuOSe epilayer and an n-type amorphous InGaZn 5 O 8 . Those results strongly suggest that a series of the layered oxychalcogenides are applicable to the light-emitting layers in opto-electronic devices that operate in the ultraviolet-blue region as well as to transparent p-type conductors. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  19. Recent developments of truly stretchable thin film electronic and optoelectronic devices.

    Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

    2018-03-29

    Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

  20. Optoelectronics circuits manual

    Marston, R M

    2013-01-01

    Optoelectronics Circuits Manual covers the basic principles and characteristics of the best known types of optoelectronic devices, as well as the practical applications of many of these optoelectronic devices. The book describes LED display circuits and LED dot- and bar-graph circuits and discusses the applications of seven-segment displays, light-sensitive devices, optocouplers, and a variety of brightness control techniques. The text also tackles infrared light-beam alarms and multichannel remote control systems. The book provides practical user information and circuitry and illustrations.

  1. Integrated silicon optoelectronics

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  2. Graphene and Two-Dimensional Materials for Optoelectronic Applications

    Andreas Bablich

    2016-03-01

    Full Text Available This article reviews optoelectronic devices based on graphene and related two-dimensional (2D materials. The review includes basic considerations of process technology, including demonstrations of 2D heterostructure growth, and comments on the scalability and manufacturability of the growth methods. We then assess the potential of graphene-based transparent conducting electrodes. A major part of the review describes photodetectors based on lateral graphene p-n junctions and Schottky diodes. Finally, the progress in vertical devices made from 2D/3D heterojunctions, as well as all-2D heterostructures is discussed.

  3. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

    Moustakas, Theodore D.; Paiella, Roberto

    2017-10-01

    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  4. Bandgap engineering by substitution of S by Se in nanostructured ZnS1-xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

    Sadekar, Harishchandra K.; Ghule, Anil Vithal; Sharma, Ramphal

    2011-01-01

    Highlights: → ZnS 1-x Se x (x = 0 to 1) thin films are successfully deposited on glass substrates by soft chemical route. → Structural, optical and electrical properties are studied. → Change in band gap, crystallite size and resistivity is noted with change in S:Se ratio. → Wide band gap material (ZnS 1-x Se x ) is useful for photosensor and solar cell applications. → It utilizes whole visible light spectrum and is a best alternative to conventionally used toxic CdS. - Abstract: Thin films of nanostructured ZnS 1-x Se x with optimized growth parameters were prepared by soft chemical route on glass substrates. Ammonia free precursors were used at 80 deg. C constant bath temperature. The ratio of sulphur to selenium was changed continuously by changing the composition x (0-1), while atomic concentration of zinc was kept constant. Structure, composition and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM), atomic force microscopy (AFM) respectively. XRD studies revealed that as-deposited films were nanostructured in nature with cubic zinc blended structure. It was further observed that the preferred orientations are along (1 1 1) plane and crystallite size decreased with increase in the value of x. SEM and AFM images revealed that films were uniform and pinhole free. The optical band gap (E g ) was calculated from the observed transmittance spectra by Urbach method. It was found that the band gap varied linearly from 3.71 to 2.70 eV, as composition x varies 0-1. The electrical properties' study revealed that the decrease in resistivity and increase in photosensitivity, as composition x varied 0-1. The observed interesting properties of ZnS 1-x Se x thin films justified their significance in optoelectronic device fabrication and applications, and as an environment friendly alternative to the commonly used toxic material such as CdS.

  5. Bandgap engineering by substitution of S by Se in nanostructured ZnS{sub 1-x}Se{sub x} thin films grown by soft chemical route for nontoxic optoelectronic device applications

    Sadekar, Harishchandra K [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, Maharashtra (India); Department of Physics, Arts, Commerce and Science College, Sonai 414105, Maharashtra (India); Ghule, Anil Vithal [Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, Maharashtra (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, Maharashtra (India)

    2011-05-05

    Highlights: > ZnS{sub 1-x}Se{sub x} (x = 0 to 1) thin films are successfully deposited on glass substrates by soft chemical route. > Structural, optical and electrical properties are studied. > Change in band gap, crystallite size and resistivity is noted with change in S:Se ratio. > Wide band gap material (ZnS{sub 1-x}Se{sub x}) is useful for photosensor and solar cell applications. > It utilizes whole visible light spectrum and is a best alternative to conventionally used toxic CdS. - Abstract: Thin films of nanostructured ZnS{sub 1-x}Se{sub x} with optimized growth parameters were prepared by soft chemical route on glass substrates. Ammonia free precursors were used at 80 deg. C constant bath temperature. The ratio of sulphur to selenium was changed continuously by changing the composition x (0-1), while atomic concentration of zinc was kept constant. Structure, composition and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM), atomic force microscopy (AFM) respectively. XRD studies revealed that as-deposited films were nanostructured in nature with cubic zinc blended structure. It was further observed that the preferred orientations are along (1 1 1) plane and crystallite size decreased with increase in the value of x. SEM and AFM images revealed that films were uniform and pinhole free. The optical band gap (E{sub g}) was calculated from the observed transmittance spectra by Urbach method. It was found that the band gap varied linearly from 3.71 to 2.70 eV, as composition x varies 0-1. The electrical properties' study revealed that the decrease in resistivity and increase in photosensitivity, as composition x varied 0-1. The observed interesting properties of ZnS{sub 1-x}Se{sub x} thin films justified their significance in optoelectronic device fabrication and applications, and as an environment friendly alternative to the commonly used toxic

  6. A Novel Optoelectronic Device Based on Correlated Two-Dimensional Fermions

    Dianat, Pouya

    Conventional metallic contacts can be replicated by quantum two dimensional charge (of Fermion) systems (2DFS). Unlike metals, the particle concentration of these "unconventional" systems can be accurately controlled in an extensive range and by means of external electronic or optical stimuli. A 2DFS can, hence, transition from a high-density kinetic liquid into a dilute-but highly correlated-gas state, in which inter-particle Coulombic interactions are significant. Such interactions contribute negatively, by so-called exchange-correlation energies, to the overall energetics of the system, and are manifested as a series negative quantum capacitance. This dissertation investigates the capacitive performance of a class of unconventional devices based on a planar metal-semiconductor-metal structure with an embedded 2DFS. They constitute an opto-electronically controlled variable capacitor, with record breaking figures-of-merit in capacitance tuning ranges of up to 7000 and voltage sensitivities as large as 400. Internal eld manipulations by localized depletion of a dense 2DFS account for the enlarged maximum and reduced minimum capacitances. The capacitance-voltage characteristics of these devices incur an anomalous "Batman" shape capacitance enhancement (CE) of up to 200% that may be triggered optically. The CE is attributed to the release and storage of exchange-correlation energies; from the "unconventional" plate and in the dielectric, respectively. This process is enforced by density manipulation of the 2DFS by a hybrid of an external eld and light-generated carriers. Under moderate optical powers, the capacitance becomes 43 times greater than the dark value; thus a new capacitance-based photodetection method is offered. This new capacitance based photodetection method has a range of applications in optoelectronics, particularly in the next generation of photonic integrated systems.

  7. Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

    Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

    2015-05-06

    Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

  8. 78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    2013-12-20

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-860] Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY...

  9. Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges

    Zhang, Wei

    In this research project I have investigated AlGaN alloys and their quantum structures for applications in deep UV and terahertz optoelectronic devices. For the deep UV emitter applications the materials and devices were grown by rf plasma-assisted molecular beam epitaxy on 4H-SiC, 6H-SiC and c-plane sapphire substrates. In the growth of AlGaN/AlN multiple quantum wells on SiC substrates, the AlGaN wells were grown under excess Ga, far beyond than what is required for the growth of stoichiometric AlGaN films, which resulted in liquid phase epitaxy growth mode. Due to the statistical variations of the excess Ga on the growth front we found that this growth mode leads to films with lateral variations in the composition and thus, band structure potential fluctuations. Transmission electron microscopy shows that the wells in such structures are not homogeneous but have the appearance of quantum dots. We find by temperature dependent photoluminescence measurements that the multiple quantum wells with band structure potential fluctuations emit at 240 nm and have room temperature internal quantum efficiency as high as 68%. Furthermore, they were found to have a maximum net modal optical gain of 118 cm-1 at a transparency threshold corresponding to 1.4 x 1017 cm-3 excited carriers. We attribute this low transparency threshold to population inversion of only the regions of the potential fluctuations rather than of the entire matrix. Some prototype deep UV emitting LED structures were also grown by the same method on sapphire substrates. Optoelectronic devices for terahertz light emission and detection, based on intersubband transitions in III-nitride semiconductor quantum wells, were grown on single crystal c-plane GaN substrates. Growth conditions such the ratio of group III to active nitrogen fluxes, which determines the appropriate Ga-coverage for atomically smooth growth without requiring growth interruptions were employed. Emitters designed in the quantum cascade

  10. Optical technology for microwave applications VI and optoelectronic signal processing for phased-array antennas III; Proceedings of the Meeting, Orlando, FL, Apr. 20-23, 1992

    Yao, Shi-Kay; Hendrickson, Brian M.

    The following topics related to optical technology for microwave applications are discussed: advanced acoustooptic devices, signal processing device technologies, optical signal processor technologies, microwave and optomicrowave devices, advanced lasers and sources, wideband electrooptic modulators, and wideband optical communications. The topics considered in the discussion of optoelectronic signal processing for phased-array antennas include devices, signal processing, and antenna systems.

  11. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  12. Optoelectronic device for the measurement of the absolute linear position in the micrometric displacement range

    Morlanes, Tomas; de la Pena, Jose L.; Sanchez-Brea, Luis M.; Alonso, Jose; Crespo, Daniel; Saez-Landete, Jose B.; Bernabeu, Eusebio

    2005-07-01

    In this work, an optoelectronic device that provides the absolute position of a measurement element with respect to a pattern scale upon switch-on is presented. That means that there is not a need to perform any kind of transversal displacement after the startup of the system. The optoelectronic device is based on the process of light propagation passing through a slit. A light source with a definite size guarantees the relation of distances between the different elements that constitute our system and allows getting a particular optical intensity profile that can be measured by an electronic post-processing device providing the absolute location of the system with a resolution of 1 micron. The accuracy of this measuring device is restricted to the same limitations of any incremental position optical encoder.

  13. All-optoelectronic continuous wave THz imaging for biomedical applications

    Siebert, Karsten J; Loeffler, Torsten; Quast, Holger; Thomson, Mark; Bauer, Tobias; Leonhardt, Rainer; Czasch, Stephanie; Roskos, Hartmut G

    2002-01-01

    We present an all-optoelectronic THz imaging system for ex vivo biomedical applications based on photomixing of two continuous-wave laser beams using photoconductive antennas. The application of hyperboloidal lenses is discussed. They allow for f-numbers less than 1/2 permitting better focusing and higher spatial resolution compared to off-axis paraboloidal mirrors whose f-numbers for practical reasons must be larger than 1/2. For a specific histological sample, an analysis of image noise is discussed

  14. Synthesis of Mn{sub 0.04}Cu{sub 0.05}Zn{sub 0.91}O nanorod and its application in optoelectronic switching device

    Layek, Animesh, E-mail: layekanimesh@gmail.com [Department of Physics, Bejoy Narayan Mahavidyalaya, Itachuna, Hooghly-712147 (India); Middya, Somnath [Department of Physics, Bankim Sardar College, Tangrakhali, South 24-paraganas, pin-743329 (India)

    2016-05-06

    The optical absorption of ZnO nanorod had been reduced by introducing Mn as doping element. In this present study the optical absorption of ZnO nanorod has been improved by simultaneous doping of the element Mn and Cu. The hydrothermal reaction was adopted for the synthesis. The electrical conductivity and the optical band gap of the Mn{sub 0.04}Cu{sub 0.05}Zn{sub 0.91}O were measured as 1.16 × 10{sup −3}Scm{sup −1} and 3.07eV respectively, assigned the semiconductor behavior. The light induced rectification in time dependent current response characteristic of Al/ Mn{sub 0.04}Cu{sub 0.05}Zn{sub 0.91}O/ITO was investigated to check the performance of the composite in opto-electronic switching device.

  15. Exploration on the training mode of application-oriented talents majoring in optoelectronic information

    Lv, Hao; Liu, Aimei; Zhang, Shengyi; Xiao, Yongjun

    2017-08-01

    The optoelectronic information major is a strong theoretical and practical specialty. In view of the problems existing in the application-oriented talents training in the optoelectronic information specialty. Five aspects of the talent cultivation plan, the teaching staff, the teaching content, the practical teaching and the scientific research on the training mode of application-oriented talents majoring in optoelectronic information are putted forward. It is beneficial to the specialty construction of optoelectronic information industry which become close to the development of enterprises, and the depth of the integration of school and enterprise service regional economic optoelectronic information high-end skilled personnel base.

  16. Opto-electronic devices with nanoparticles and their assemblies

    Nguyen, Chieu Van

    Nanotechnology is a fast growing field; engineering matters at the nano-meter scale. A key nanomaterial is nanoparticles (NPs). These sub-wavelength (background noise. The second device is based on a one-dimensional (1-D) self-directed self-assembly of Au NPs mediated by dielectric materials. Depending on the coverage density of the Au NPs assembly deposited on the device, electronic emission was observed at ultra-low bias of 40V, leading to low-power plasma generation in air at atmospheric pressure. Light emitted from the plasma is apparent to the naked eyes. Similarly, 1-D self-assembly of Au NPs mediated by iron oxide was fabricated and exhibits ferro-magnetic behavior. The multi-functional 1-D self-assembly of Au NPs has great potential in modern electronics such as solid state lighting, plasma-based nanoelectronics, and memory devices.

  17. A full-duplex working integrated optoelectronic device for optical interconnect

    Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

    2018-05-01

    In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

  18. Optical modeling based on mean free path calculations for quantum dot phosphors applied to optoelectronic devices.

    Shin, Min-Ho; Kim, Hyo-Jun; Kim, Young-Joo

    2017-02-20

    We proposed an optical simulation model for the quantum dot (QD) nanophosphor based on the mean free path concept to understand precisely the optical performance of optoelectronic devices. A measurement methodology was also developed to get the desired optical characteristics such as the mean free path and absorption spectra for QD nanophosphors which are to be incorporated into the simulation. The simulation results for QD-based white LED and OLED displays show good agreement with the experimental values from the fabricated devices in terms of spectral power distribution, chromaticity coordinate, CCT, and CRI. The proposed simulation model and measurement methodology can be applied easily to the design of lots of optoelectronics devices using QD nanophosphors to obtain high efficiency and the desired color characteristics.

  19. Organic optoelectronic materials

    Li, Yongfang

    2015-01-01

    This volume reviews the latest trends in organic optoelectronic materials. Each comprehensive chapter allows graduate students and newcomers to the field to grasp the basics, whilst also ensuring that they have the most up-to-date overview of the latest research. Topics include: organic conductors and semiconductors; conducting polymers and conjugated polymer semiconductors, as well as their applications in organic field-effect-transistors; organic light-emitting diodes; and organic photovoltaics and transparent conducting electrodes. The molecular structures, synthesis methods, physicochemical and optoelectronic properties of the organic optoelectronic materials are also introduced and described in detail. The authors also elucidate the structures and working mechanisms of organic optoelectronic devices and outline fundamental scientific problems and future research directions. This volume is invaluable to all those interested in organic optoelectronic materials.

  20. Functionalization of Semiconductor Nanomaterials for Optoelectronic Devices And Components

    2015-03-04

    pristine single and multiwalled carbon nanotubes as different stacking layers in bulk heterojunction solar cells,” M. Alam Khan, Michio Matsumura and M. O...Phys. Lett. 102, 051904 (2013). http://dx.doi.org/10.1063/1.4789908 13. “Synthesis of iron pyrite nanocrystals utilizing trioctylphosphine oxide ...O. Manasreh, IEEE Electron Device Letters (Submitted). 20. “Characteristics of p-ZnO/n-GaN heterojunction photodetector,” Abla Al-Zouhbi, N. S

  1. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    Tsai, Yu-Lin

    2016-09-06

    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

  2. Engineering Strain for Improved III-Nitride Optoelectronic Device Performance

    Van Den Broeck, Dennis Marnix

    Due to growing environmental and economic concerns, renewable energy generation and high-efficiency lighting are becoming even more important in the scientific community. III-Nitride devices have been essential in production of high-brightness light-emitting diodes (LEDs) and are now entering the photovoltaic (PV) realm as the technology advances. InGaN/GaN multiple quantum well LEDs emitting in the blue/green region have emerged as promising candidates for next-generation lighting technologies. Due to the large lattice mismatch between InN and GaN, large electric fields exist within the quantum well layers and result in low rates of radiative recombination, especially for the green spectral region. This is commonly referred to as the "green gap" and results in poor external quantum efficiencies for light-emitting diodes and laser diodes. In order to mitigate the compressive stress of InGaN QWs, a novel growth technique is developed in order to grown thick, strain-relaxed In yGa1-yN templates for 0.08 structure, "semibulk" InGaN templates were achieved with vastly superior crystal and optical properties than bulk InGaN films. These semibulk InGaN templates were then utilized as new templates for multiple quantum well active layers, effectively reducing the compressive strain in the InGaN wells due to the larger lattice constant of the InGaN template with respect to a GaN template. A zero-stress balance method was used in order to realize a strain-balanced multiple quantum well structure, which again showed improved optical characteristics when compared to fully-strain active regions. The semibulk InGaN template was then implemented into "strain-compensated" LED structures, where light emission was achieved with very little leakage current. Discussion of these strain-compensated devices compared to conventional LEDs is detailed.

  3. An optoelectronic integrated device including a laser and its driving circuit

    Matsueda, H.; Nakano, H.; Tanaka, T.P.

    1984-10-01

    A monolithic optoelectronic integrated circuit (OEIC) including a laser diode, photomonitor and driving and detecting circuits has been fabricated on a semi-insulating GaAs substrate. The OEIC has a horizontal integrating structure which is suitable for realising high-density multifunctional devices. The fabricating process and the static and dynamic characteristics of the optical and electronic elements are described. The preliminary results of the co-operative operation of the laser and its driving circuit are also presented.

  4. Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices

    Beljonne, David; Cornil, Jérôme; Muccioli, Luca; Zannoni, Claudio; Brédas, Jean-Luc; Castet, Frédéric

    2011-01-01

    We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational

  5. Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

    Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

    2016-03-22

    Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications.

  6. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

    Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

    2014-04-01

    A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

  7. Interface Engineering and Morphology Study of Thin Film Organic-Inorganic Halide Perovskite Optoelectronic Devices

    Meng, Lei

    significantly improved compared with cells made with organic layers. Degradation mechanisms were investigated and important guidelines were derived for future device design with a view to achieving both highly efficient and stable solar devices. Organometal halide based perovskite material has great optoelectronic proprieties, for example, shallow traps, benign grain boundaries and high diffusion length. The perovskite LEDs show pure electroluminescence (EL) with narrow full width at half maximum (FWHM), which is an advantage for display, lighting or lasing applications. In chapter five, perovskite LEDs are demonstrated employing solution processed charge injection layers with a quantum efficiency of 1.16% with a very low driving voltage.

  8. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    Eita, Mohamed S.

    2016-08-04

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

  9. Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices

    Du, Xiang

    As the sizes of individual components in electronic and optoelectronic devices approach nano scale, the performance of the devices is often determined by surface properties due to their large surface-to-volume ratio. Surface phenomena have become one of the cornerstones in nanoelectronic industry. For this reason, research on the surface functionalization has been tremendous amount of growth over the past decades, and promises to be an increasingly important field in the future. Surface functionalization, as an effective technique to modify the surface properties of a material through a physical or chemical approach, exhibits great potential to solve the problems and challenges, and modulate the performance of nanomaterials based functional devices. Surface functionalization drives the developments and applications of modern electronic and optoelectronic devices fabricated by nanomaterials. In this thesis, I demonstrate two surface functionalization approaches, namely, surface transfer doping and H2 annealing, to effectively solve the problems and significantly enhance the performance of 2D (single structure black phosphorus (BP) and heterostructure graphene/Si Schottky junction), and quasi-1D (molybdenum trioxide (MoO 3) nanobelt) nanomaterials based functional devices, respectively. In situ photoelectron spectroscopy (PES) measurements were also carried out to explore the interfacial charge transfer occurring at the interface between the nanostructures and doping layers, and the gap states in MoO 3 thin films, which provides the underlying mechanism to understand and support our device measurement results. In the first part of this thesis, I will discuss the first surface functionalization approach, namely, surface transfer doping, to effectively modulate the ambipolar characteristics of 2D few-layer BP flakes based FETs. The ambipolar characteristics of BP transistors were effectively modulated through in situ surface functionalization with cesium carbonate (Cs2

  10. Simultaneous topographical, electrical and optical microscopy of optoelectronic devices at the nanoscale

    Kumar, Naresh

    2017-01-12

    Novel optoelectronic devices rely on complex nanomaterial systems where the nanoscale morphology and local chemical composition are critical to performance. However, the lack of analytical techniques that can directly probe these structure-property relationships at the nanoscale presents a major obstacle to device development. In this work, we present a novel method for non-destructive, simultaneous mapping of the morphology, chemical composition and photoelectrical properties with <20 nm spatial resolution by combining plasmonic optical signal enhancement with electrical-mode scanning probe microscopy. We demonstrate that this combined approach offers subsurface sensitivity that can be exploited to provide molecular information with a nanoscale resolution in all three spatial dimensions. By applying the technique to an organic solar cell device, we show that the inferred surface and subsurface composition distribution correlates strongly with the local photocurrent generation and explains macroscopic device performance. For instance, the direct measurement of fullerene phase purity can distinguish between high purity aggregates that lead to poor performance and lower purity aggregates (fullerene intercalated with polymer) that result in strong photocurrent generation and collection. We show that the reliable determination of the structure-property relationship at the nanoscale can remove ambiguity from macroscopic device data and support the identification of the best routes for device optimisation. The multi-parameter measurement approach demonstrated herein is expected to play a significant role in guiding the rational design of nanomaterial-based optoelectronic devices, by opening a new realm of possibilities for advanced investigation via the combination of nanoscale optical spectroscopy with a whole range of scanning probe microscopy modes.

  11. Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

    Al-Kabi, Sattar H. Sweilim

    Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

  12. Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

    Catrysse, Peter B.

    2010-08-11

    We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from that of optically thick metallic films. We analyze the optical properties when performing a geometrical transformation that maintains the electrical properties. For one-dimensional patterns of metallic wires, the analysis favors tall and narrow wires. Our design principles remain valid for oblique incidence and readily carry over to two-dimensional patterns. © 2010 American Chemical Society.

  13. Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

    Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

    2017-01-01

    Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

  14. Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

    Muhammed, Mufasila Mumthaz

    2018-03-11

    III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique properties that combine high transparency and conductivity, is used for the first time in the development of high-quality vertical III-nitride devices, which can be cost-effective for large-scale production. In addition, hybridizing GaN with emerging materials, mainly perovskite, is shown to extend the functionality of III-nitride applications. As a part of this investigation, high-performance and high-responsivity fast perovskite/GaN-based UV-visible broadband photodetectors were developed. State-of-the-art GaN epilayers grown on (-201)-oriented β-Ga2O3 using AlN and GaN buffer layers are discussed, and their high optical quality without using growth enhancement techniques is demonstrated. In particular, a low lattice mismatch (⁓4.7%) between GaN and the substrate results in a low density of dislocations ~4.8Å~107 cm−2. To demonstrates the effect of (-201)-oriented β-Ga2O3 substrate on the quality of III-nitride alloys, high-quality ternary alloy InxGa1−xN film is studied, followed by the growth of high quality InxGa1−xN/GaN single and multiple quantum wells (QWs). The optical characterization and carrier dynamics by photoluminescence (PL) and time-resolved PL measurements were subsequently performed. Lastly, to investigate the performance of a vertical emitting device based on InGaN/GaN multiple QWs grown on (-201)-oriented β-Ga2O3 substrate, high-efficiency vertical-injection emitting device is developed and extensively investigated. The conductive nature of

  15. Basic opto-electronics on silicon for sensor applications

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  16. Bismuth Silver Oxysulfide for Photoconversion Applications: Structural and Optoelectronic Properties

    Baqais, Amal Ali Abdulallh; Curutchet, Antton; Ziani, Ahmed; Ait Ahsaine, Hassan; Sautet, Philippe; Takanabe, Kazuhiro; Le Bahers, Tangui

    2017-01-01

    Single-phase bismuth silver oxysulfide, BiAgOS, was prepared by a hydrothermal method. Its structural, morphological and optoelectronic properties were investigated and compared with bismuth copper oxysulfide (BiCuOS). Rietveld refinement of the powder X-ray diffraction (XRD) measurements revealed that the BiAgOS and BiCuOS crystals have the same structure as ZrSiCuAs: the tetragonal space group P4/nmm. X-ray photoelectron spectroscopy (XPS) analyses confirmed that the BiAgOS has a high purity, in contrast with BiCuOS, which tends to have Cu vacancies. The Ag has a monovalent oxidation state, whereas Cu is present in the oxidation states of +1 and +2 in the BiCuOS system. Combined with experimental measurements, density functional theory calculations employing the range-separated hybrid HSE06 exchange-correlation functional with spin-orbit coupling quantitatively elucidated photophysical properties such as ab-sorption coefficients, effective masses and dielectric constants. BiCuOS and BiAgOS were found to have indirect bandgaps of 1.1 and 1.5 eV, respectively. Both possess high dielectric constants and low electron and hole effective masses. Therefore, these materials are expected to have high exciton dissociation capabilities and excellent carrier diffusion properties. This study reveals that BiAgOS is a promising candidate for photoconversion applications.

  17. Bismuth Silver Oxysulfide for Photoconversion Applications: Structural and Optoelectronic Properties

    Baqais, Amal Ali Abdulallh

    2017-09-18

    Single-phase bismuth silver oxysulfide, BiAgOS, was prepared by a hydrothermal method. Its structural, morphological and optoelectronic properties were investigated and compared with bismuth copper oxysulfide (BiCuOS). Rietveld refinement of the powder X-ray diffraction (XRD) measurements revealed that the BiAgOS and BiCuOS crystals have the same structure as ZrSiCuAs: the tetragonal space group P4/nmm. X-ray photoelectron spectroscopy (XPS) analyses confirmed that the BiAgOS has a high purity, in contrast with BiCuOS, which tends to have Cu vacancies. The Ag has a monovalent oxidation state, whereas Cu is present in the oxidation states of +1 and +2 in the BiCuOS system. Combined with experimental measurements, density functional theory calculations employing the range-separated hybrid HSE06 exchange-correlation functional with spin-orbit coupling quantitatively elucidated photophysical properties such as ab-sorption coefficients, effective masses and dielectric constants. BiCuOS and BiAgOS were found to have indirect bandgaps of 1.1 and 1.5 eV, respectively. Both possess high dielectric constants and low electron and hole effective masses. Therefore, these materials are expected to have high exciton dissociation capabilities and excellent carrier diffusion properties. This study reveals that BiAgOS is a promising candidate for photoconversion applications.

  18. Optimization of light out-coupling in optoelectronic devices using nanostructured surface

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    C and GaN, these developed methods could be applied to other semicon ductors such as Si, etc. Furthermore, all optoelectronic devices having an optical interface such as solar cells, photo - detectors, could benefit from these developed methods for opto - electronic performance improvement....... the overall efficiency of the LEDs. In this paper we have developed various methods for two important semiconductors: silicon carbide (SiC) and gallium nitride (GaN), and demonstrated enormous extraction efficiency enhancement. SiC is an important su bstrate for LED devices. It has refractive index of 2.......6, and only a few percent of light could escape from it. We have developed periodic nanocone structures by using electron - beam lithography, periodic nanodome structures by using nanosphere lithography, random nanostructures by using self - assembled metal nanoparticles, and random nanostructures by directly...

  19. Understanding and removing surface states limiting charge transport in TiO2 nanowire arrays for enhanced optoelectronic device performance.

    Sheng, Xia; Chen, Liping; Xu, Tao; Zhu, Kai; Feng, Xinjian

    2016-03-01

    Charge transport within electrode materials plays a key role in determining the optoelectronic device performance. Aligned single-crystal TiO 2 nanowire arrays offer an ideal electron transport path and are expected to have higher electron mobility. Unfortunately, their transport is found not to be superior to that in nanoparticle films. Here we show that the low electron transport in rutile TiO 2 nanowires is mainly caused by surface traps in relatively deep energy levels, which cannot be removed by conventional approaches, such as oxygen annealing treatment. Moreover, we demonstrate an effective wet-chemistry approach to minimize these trap states, leading to over 20-fold enhancement in electron diffusion coefficient and 62% improvement in solar cell performance. On the basis of our results, the potential of TiO 2 NWs can be developed and well-utilized, which is significantly important for their practical applications.

  20. Nanostructure of highly aromatic graphene nanosheets -- From optoelectronics to electrochemical energy storage applications

    Biswas, Sanjib

    aligned network designed to maximize device performance. Monolayers of large sized graphene nanosheets function as highly electrically conducting current collectors within a mesoporous network of smaller graphene nanosheets for improved rate capability of the electrical double layer capacitor (EDLC) electrode. This nano-architecture produces an electrode with superior performance for high power EDLC applications: a high frequency capacitative response; a nearly rectangular cyclic voltammogram at a scanning rate of 1000 mv/sec; a rapid current response; small equivalent series resistance (ESR); and fast ionic diffusion. Integration of this nanostructured graphene nanosheet architecture with conductive polymers or metal oxide nanostructurcs was also investigated to produce similar multilayered structures for electrochemical energy storage applications. These inexpensive graphene nanosheets coupled with this facile and robust nanostructuring process make both this new material and method highly advantageous for many potential applications ranging from optoelectronics to high power electrochemical energy storage applications.

  1. Resonant infrared laser deposition of polymer-nanocomposite materials for optoelectronic applications

    Park, Hee K.; Schriver, Kenneth E.; Haglund, Richard F.

    2011-11-01

    Polymers find a number of potentially useful applications in optoelectronic devices. These include both active layers, such as light-emitting polymers and hole-transport layers, and passive layers, such as polymer barrier coatings and light-management films. This paper reports the experimental results for polymer films deposited by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) and resonant infrared pulsed laser deposition (RIR-PLD) for commercial optoelectronic device applications. In particular, light-management films, such as anti-reflection coatings, require refractive-index engineering of a material. However, refractive indices of polymers fall within a relatively narrow range, leading to major efforts to develop both low- and high-refractive-index polymers. Polymer nanocomposites can expand the range of refractive indices by incorporating low- or high-refractive-index nanoscale materials. RIR-MAPLE is an excellent technique for depositing polymer-nanocomposite films in multilayer structures, which are essential to light-management coatings. In this paper, we report our efforts to engineer the refractive index of a barrier polymer by combining RIR-MAPLE of nanomaterials (for example, high refractive-index TiO2 nanoparticles) and RIR-PLD of host polymer. In addition, we report on the properties of organic and polymer films deposited by RIR-MAPLE and/or RIR-PLD, such as Alq3 [tris(8-hydroxyquinoline) aluminum] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)]. Finally, the challenges and potential for commercializing RIR-MAPLE/PLD, such as industrial scale-up issues, are discussed.

  2. Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

    Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

    2017-12-01

    We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

  3. Stress-corrosion cracking of indium tin oxide coated polyethylene terephthalate for flexible optoelectronic devices

    Sierros, Konstantinos A.; Morris, Nicholas J.; Ramji, Karpagavalli; Cairns, Darran R.

    2009-01-01

    Stress corrosion cracking of transparent conductive layers of indium tin oxide (ITO), sputtered on polyethylene terephthalate (PET) substrates, is an issue of paramount importance in flexible optoelectronic devices. These components, when used in flexible device stacks, can be in contact with acid containing pressure-sensitive adhesives or with conductive polymers doped in acids. Acids can corrode the brittle ITO layer, stress can cause cracking and delamination, and stress-corrosion cracking can cause more rapid failure than corrosion alone. The combined effect of an externally-applied mechanical stress to bend the device and the corrosive environment provided by the acid is investigated in this work. We show that acrylic acid which is contained in many pressure-sensitive adhesives can cause corrosion of ITO coatings on PET. We also investigate and report on the combined effect of external mechanical stress and corrosion on ITO-coated PET composite films. Also, it is shown that the combination of stress and corrosion by acrylic acid can cause ITO cracking to occur at stresses less than a quarter of those needed for failure with no corrosion. In addition, the time to failure, under ∼ 1% tensile strain can reduce the total time to failure by as much as a third

  4. Tungsten oxides as interfacial layers for improved performance in hybrid optoelectronic devices

    Vasilopoulou, M.; Palilis, L.C.; Georgiadou, D.G.; Argitis, P.; Kennou, S.; Kostis, I.; Papadimitropoulos, G.; Stathopoulos, N.A.; Iliadis, A.A.; Konofaos, N.; Davazoglou, D.; Sygellou, L.

    2011-01-01

    Tungsten oxide (WO 3 ) films with thicknesses ranging from 30 to 100 nm were grown by Hot Filament Vapor Deposition (HFVD). Films were studied by X-Ray Photoemission Spectroscopy (XPS) and were found to be stoichiometric. The surface morphology of the films was characterized by Atomic Force Microscopy (AFM). Samples had a granular form with grains in the order of 100 nm. The surface roughness was found to increase with film thickness. HFVD WO 3 films were used as conducting interfacial layers in advanced hybrid organic-inorganic optoelectronic devices. Hybrid-Organic Light Emitting Diodes (Hy-OLEDs) and Organic Photovoltaics (Hy-OPVs) were fabricated with these films as anode and/or as cathode interfacial conducting layers. The Hy-OLEDs showed significantly higher current density and a lower turn-on voltage when a thin WO 3 layer was inserted at the anode/polymer interface, while when inserted at the cathode/polymer interface the device performance was found to deteriorate. The improvement was attributed to a more efficient hole injection and transport from the Fermi level of the anode to the Highest Occupied Molecular Orbital (HOMO) of a yellow emitting copolymer (YEP). On the other hand, the insertion of a thin WO 3 layer at the cathode/polymer interface of Hy-OPV devices based on a polythiophene-fullerene bulk-heterojunction blend photoactive layer resulted in an increase of the produced photogenerated current, more likely due to improved electron extraction at the Al cathode.

  5. FY1995 optoelectronic devices and circuits for terabit class network; 1995 nendo terabit kyu network yo hikari denshi device kairo

    NONE

    1997-03-01

    The necessary technology realizing Terabit class optical network is the signal multiplexing both in temporal and spectral domains. Controllability of ultrafast optoelectronic systems is therefore the priority issue. Specifically we chose semiconductor lasers as the key devices. The methodology for performance improvement and the creation of novel functionality are investigated. Firstly compression of semiconductor laser pulse reached the world record of 65 femto second. Secondly a proposal was made to control mode locked semiconductor lasers via subharmonic synchronization and a substantial phase noise reduction was demonstrated. Thirdly a new technology was developed to realize broadband anti-reflection coating on semiconductor laser amplifier facet, bringing about significant performance improvement. To compensate the dispersion induced signal distortion a broadband semiconductor laser amplifier four wave mixing was analyzed and also demonstrated experimentally. (NEDO)

  6. Investigational Clinical Trial of a Prototype Optoelectronic Computer-Aided Navigation Device for Dental Implant Surgery.

    Jokstad, Asbjørn; Winnett, Brenton; Fava, Joseph; Powell, David; Somogyi-Ganss, Eszter

    New digital technologies enable real-time computer-aided (CA) three-dimensional (3D) guidance during dental implant surgery. The aim of this investigational clinical trial was to demonstrate the safety and effectiveness of a prototype optoelectronic CA-navigation device in comparison with the conventional approach for planning and effecting dental implant surgery. Study participants with up to four missing teeth were recruited from the pool of patients referred to the University of Toronto Graduate Prosthodontics clinic. The first 10 participants were allocated to either a conventional or a prototype device study arm in a randomized trial. The next 10 participants received implants using the prototype device. All study participants were restored with fixed dental prostheses after 3 (mandible) or 6 (maxilla) months healing, and monitored over 12 months. The primary outcome was the incidence of any surgical, biologic, or prosthetic adverse events or device-related complications. Secondary outcomes were the incidence of positioning of implants not considered suitable for straightforward prosthetic restoration (yes/no); the perception of the ease of use of the prototype device by the two oral surgeons, recorded by use of a Likert-type questionnaire; and the clinical performance of the implant and superstructure after 1 year in function. Positioning of the implants was appraised on periapical radiographs and clinical photographs by four independent blinded examiners. Peri-implant bone loss was measured on periapical radiographs by a blinded examiner. No adverse events occurred related to placing any implants. Four device-related complications led to a switch from using the prototype device to the conventional method. All implants placed by use of the prototype device were in a position considered suitable for straightforward prosthetic restoration (n = 21). The qualitative evaluation by the surgeons was generally positive, although ergonomic challenges were identified

  7. Tailoring uniform gold nanoparticle arrays and nanoporous films for next-generation optoelectronic devices

    Farid, Sidra; Kuljic, Rade; Poduri, Shripriya; Dutta, Mitra; Darling, Seth B.

    2018-06-01

    High-density arrays of gold nanodots and nanoholes on indium tin oxide (ITO)-coated glass surfaces are fabricated using a nanoporous template fabricated by the self-assembly of diblock copolymers of poly (styrene-block-methyl methacrylate) (PS-b-PMMA) structures. By balancing the interfacial interactions between the polymer blocks and the substrate using random copolymer, cylindrical block copolymer microdomains oriented perpendicular to the plane of the substrate have been obtained. Nanoporous PS films are created by selectively etching PMMA cylinders, a straightforward route to form highly ordered nanoscale porous films. Deposition of gold on the template followed by lift off and sonication leaves a highly dense array of gold nanodots. These materials can serve as templates for the vapor-liquid-solid (VLS) growth of semiconductor nanorod arrays for next generation hybrid optoelectronic applications.

  8. Characteristics of the Current-Controlled Phase Transition of VO2 Microwires for Hybrid Optoelectronic Devices

    Arash Joushaghani

    2015-08-01

    Full Text Available The optical and electrical characteristics of the insulator-metal phase transition of vanadium dioxide (VO2 enable the realization of power-efficient, miniaturized hybrid optoelectronic devices. This work studies the current-controlled, two-step insulator-metal phase transition of VO2 in varying microwire geometries. Geometry-dependent scaling trends extracted from current-voltage measurements show that the first step induced by carrier injection is delocalized over the microwire, while the second, thermally-induced step is localized to a filament about 1 to 2 μm wide for 100 nm-thick sputtered VO2 films on SiO2. These effects are confirmed by direct infrared imaging, which also measures the change in optical absorption in the two steps. The difference between the threshold currents of the two steps increases as the microwires are narrowed. Micron- and sub-micron-wide VO2 structures can be used to separate the two phase transition steps in photonic and electronic devices.

  9. Ligand removal and photo-activation of CsPbBr3 quantum dots for enhanced optoelectronic devices.

    Moyen, Eric; Kanwat, Anil; Cho, Sinyoung; Jun, Haeyeon; Aad, Roy; Jang, Jin

    2018-05-10

    Perovskite quantum dots have recently emerged as a promising light source for optoelectronic applications. However, integrating them into devices while preserving their outstanding optical properties remains challenging. Due to their ionic nature, perovskite quantum dots are extremely sensitive and degrade on applying the simplest processes. To maintain their colloidal stability, they are surrounded by organic ligands; these prevent efficient charge carrier injection in devices and have to be removed. Here we report on a simple method, where a moderate thermal process followed by exposure to UV in air can efficiently remove ligands and increase the photo-luminescence of the room temperature synthesized perovskite quantum dot thin films. Annealing is accompanied by a red shift of the emission wavelength, usually attributed to the coalescence and irreversible degradation of the quantum dots. We show that it is actually related to the relaxation of the quantum dots upon the ligand removal, without the creation of non-radiative recombining defects. The quantum dot surface, as devoid of ligands, is subsequently photo-oxidized and smoothened upon exposure to UV in air, which drastically enhances their photo-luminescence. This adequate combination of treatments improves by more than an order of magnitude the performances of perovskite quantum dot light emitting diodes.

  10. ACCURACY COMPARISON OF ALGORITHMS FOR DETERMINATION OF IMAGE CENTER COORDINATES IN OPTOELECTRONIC DEVICES

    N. A. Starasotnikau

    2018-01-01

    Full Text Available Accuracy in determination of coordinates for image having simple shapes is considered as one of important and significant parameters in metrological optoelectronic systems such as autocollimators, stellar sensors, Shack-Hartmann sensors, schemes for geometric calibration of digital cameras for aerial and space imagery, various tracking systems. The paper describes a mathematical model for a measuring stand based on a collimator which projects a test-object onto a photodetector of an optoelectronic device. The mathematical model takes into account characteristic noises for photodetectors: a shot noise of the desired signal (photon and a shot noise of a dark signal, readout and spatial heterogeneity of CCD (charge-coupled device matrix elements. In order to reduce noise effect it is proposed to apply the Wiener filter for smoothing an image and its unambiguous identification and also enter a threshold according to brightness level. The paper contains a comparison of two algorithms for determination of coordinates in accordance with energy gravity center and contour. Sobel, Pruitt, Roberts, Laplacian Gaussian, Canni detectors have been used for determination of the test-object contour. The essence of the algorithm for determination of coordinates lies in search for an image contour in the form of a circle with its subsequent approximation and determination of the image center. An error calculation has been made while determining coordinates of a gravity center for test-objects of various diameters: 5, 10, 20, 30, 40, 50 pixels of a photodetector and also signalto-noise ratio values: 200, 100, 70, 20, 10. Signal-to-noise ratio has been calculated as a difference between maximum image intensity of the test-object and the background which is divided by mean-square deviation of the background. The accuracy for determination of coordinates has been improved by 0.5-1 order in case when there was an increase in a signal-to-noise ratio. Accuracy

  11. Development of an optoelectronic holographic platform for otolaryngology applications

    Harrington, Ellery; Dobrev, Ivo; Bapat, Nikhil; Flores, Jorge Mauricio; Furlong, Cosme; Rosowski, John; Cheng, Jeffery Tao; Scarpino, Chris; Ravicz, Michael

    2010-08-01

    In this paper, we present advances on our development of an optoelectronic holographic computing platform with the ability to quantitatively measure full-field-of-view nanometer-scale movements of the tympanic membrane (TM). These measurements can facilitate otologists' ability to study and diagnose hearing disorders in humans. The holographic platform consists of a laser delivery system and an otoscope. The control software, called LaserView, is written in Visual C++ and handles communication and synchronization between hardware components. It provides a user-friendly interface to allow viewing of holographic images with several tools to automate holography-related tasks and facilitate hardware communication. The software uses a series of concurrent threads to acquire images, control the hardware, and display quantitative holographic data at video rates and in two modes of operation: optoelectronic holography and lensless digital holography. The holographic platform has been used to perform experiments on several live and post-mortem specimens, and is to be deployed in a medical research environment with future developments leading to its eventual clinical use.

  12. Transparent Electrodes with Nanotubes and Graphene for Printed Optoelectronic Applications

    Marcin Słoma

    2014-01-01

    Full Text Available We report here on printed electroluminescent structures containing transparent electrodes made of carbon nanotubes and graphene nanoplatelets. Screen-printing and spray-coating techniques were employed. Electrodes and structures were examined towards optical parameters using spectrophotometer and irradiation meter. Electromechanical properties of transparent electrodes are exterminated with cyclical bending test. Accelerated aging process was conducted according to EN 62137 standard for reliability tests of electronics. We observed significant negative influence of mechanical bending on sheet resistivity of ITO, while resistivity of nanotube and graphene based electrodes remained stable. Aging process has also negative influence on ITO based structures resulting in delamination of printed layers, while those based on carbon nanomaterials remained intact. We observe negligible changes in irradiation for structures with carbon nanotube electrodes after accelerated aging process. Such materials demonstrate a high application potential in general purpose electroluminescent devices.

  13. Study of a thiophene-based polymer for optoelectronic applications

    Cheylan, S.; Fraleoni-Morgera, A.; Puigdollers, J.; Voz, C.; Setti, L.; Alcubilla, R.; Badenes, G.; Costa-Bizzarri, P.; Lanzi, M.

    2006-01-01

    A thiophene-based conjugated polymer bearing a cyano group (-CN) as a side chain substituent was successfully synthesized. The polymer evidences an excellent film ability from various organic solvents as well as an enhanced photoluminescence. The polymer has been characterized optically (Fourier Transformed Infrared spectroscopy, absorption and photoluminescence) in solution and in film, while X-ray diffraction measurements (XRD) of thin films were performed to investigate its bulk morphological features. From the absorption edge of the spectrum of a thin polymer film, the optical band gap of the polymer is estimated to be 2.0 eV, which corresponds to orange emission. Furthermore, a single layer light emitting diode (LED) was fabricated. The device produced bright stable electroluminescence at room temperature. All of the results indicate that this polymer is a promising emissive material for application in polymeric LEDs

  14. Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling

    Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin

    2011-12-01

    Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).

  15. Heavy ion elastic recoil detection analysis of optoelectronic and semiconductor devices

    Dytlewski, N; Cohen, D D [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Johnston, P; Walker, S [Royal Melbourne Inst. of Tech., VIC (Australia); Whitlow, H; Hult, M [Lund Univ. (Sweden); Oestling, M; Zaring, C [Royal Inst. of Tech., Stockholm (Sweden)

    1994-12-31

    In recent years, the use of heavy ion time-of-flight elastic recoil spectrometry (HIERDA) has been applied to analyse multi-phase, thin layer devices used in optoelectronics, semiconductors and solar power generation. HIERDA gives simultaneously, mass resolved elemental concentration vs depth profiles of the matrix constituents, and is particularly suited to the determination of light elements in a heavy matrix. The beam/target interaction process is similar to RBS, but has the difference that the recoiling target atoms are detected instead of the scattered projectile. High energy, heavy ions beams bombard the sample, ejecting recoil atoms which are detected at a forward angle of 45 deg. A time-of-flight and total energy detection system enables the ejected particle`s mass to be identified, and allows energy spectra to be obtained and interpreted in an analogous way to RBS, but with the important difference that the elemental spectra are separated, and not superimposed on a background as in RBS. Some of the measurements made with a HIERDA system on the ANTARES Tandem Accelerator at ANSTO are described. 1 refs., 4 figs.

  16. Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

    2014-01-01

    Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants. PMID:25253644

  17. Heavy ion elastic recoil detection analysis of optoelectronic and semiconductor devices

    Dytlewski, N.; Cohen, D.D. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Johnston, P.; Walker, S. [Royal Melbourne Inst. of Tech., VIC (Australia); Whitlow, H.; Hult, M. [Lund Univ. (Sweden); Oestling, M.; Zaring, C. [Royal Inst. of Tech., Stockholm (Sweden)

    1993-12-31

    In recent years, the use of heavy ion time-of-flight elastic recoil spectrometry (HIERDA) has been applied to analyse multi-phase, thin layer devices used in optoelectronics, semiconductors and solar power generation. HIERDA gives simultaneously, mass resolved elemental concentration vs depth profiles of the matrix constituents, and is particularly suited to the determination of light elements in a heavy matrix. The beam/target interaction process is similar to RBS, but has the difference that the recoiling target atoms are detected instead of the scattered projectile. High energy, heavy ions beams bombard the sample, ejecting recoil atoms which are detected at a forward angle of 45 deg. A time-of-flight and total energy detection system enables the ejected particle`s mass to be identified, and allows energy spectra to be obtained and interpreted in an analogous way to RBS, but with the important difference that the elemental spectra are separated, and not superimposed on a background as in RBS. Some of the measurements made with a HIERDA system on the ANTARES Tandem Accelerator at ANSTO are described. 1 refs., 4 figs.

  18. Fused thiophene-based conjugated polymers and their use in optoelectronic devices

    Facchetti, Antonio; Marks, Tobin J.; Takai, Atsuro; Seger, Mark; Chen; , Zhihua

    2017-07-18

    The present teachings relate to polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds generally include as repeating units at least one annulated thienyl-vinylene-thienyl (TVT) unit and at least one other pi-conjugated unit. The annulated TVT unit can be represented by the formula: ##STR00001## where Cy.sup.1 and Cy.sup.2 can be a five- or six-membered carbocyclic ring. The annulated TVT unit can be optionally substituted at any available ring atom(s), and can be covalently linked to the other pi-conjugated unit via either the thiophene rings or the carbocyclic rings Cy.sup.1 and Cy.sup.2. The other pi-conjugated unit can be a conjugated linear linker including one or more unsaturated bonds, or a conjugated cyclic linker including one or more carbocyclic and/or heterocyclic rings.

  19. Manipulation of Self-Assembled Microparticle Chains by Electroosmotic Flow Assisted Electrorotation in an Optoelectronic Device

    Xiaolu Zhu

    2015-09-01

    Full Text Available A method incorporating the optically induced electrorotation (OER and alternating current electroosmotic (ACEO effects, for the formation and motion control of microparticle chains, is numerically and experimentally demonstrated. In this method, both the rotating electric field and ACEO fluid roll are generated around the border between light and dark area of the fluidic chamber in an optoelectronic tweezers (OET device. The experimental results show that the particle chains can self-rotate in their pitch axes under the rotating electric field produced due to the different impedances of the photoconductive layer in light and dark areas, and have a peak self-rotating rate at around 1 MHz. The orbital movement of entire particle chain around the center of ACEO fluid roll can be achieved from 0.5 to 600 kHz. The strength of OER motion and ACEO-caused orbital movement of particle chains can be adjusted by changing the frequency of alternating current (AC voltage. This non-contact method has the potential for spatially regulating the posture, orientation and position of microparticle chains.

  20. Nanoelectronic device applications handbook

    Morris, James E

    2013-01-01

    Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal-oxide-semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world.These include: Nanoscale advance

  1. Flexible Near-Field Wireless Optoelectronics as Subdermal Implants for Broad Applications in Optogenetics.

    Shin, Gunchul; Gomez, Adrian M; Al-Hasani, Ream; Jeong, Yu Ra; Kim, Jeonghyun; Xie, Zhaoqian; Banks, Anthony; Lee, Seung Min; Han, Sang Youn; Yoo, Chul Jong; Lee, Jong-Lam; Lee, Seung Hee; Kurniawan, Jonas; Tureb, Jacob; Guo, Zhongzhu; Yoon, Jangyeol; Park, Sung-Il; Bang, Sang Yun; Nam, Yoonho; Walicki, Marie C; Samineni, Vijay K; Mickle, Aaron D; Lee, Kunhyuk; Heo, Seung Yun; McCall, Jordan G; Pan, Taisong; Wang, Liang; Feng, Xue; Kim, Tae-Il; Kim, Jong Kyu; Li, Yuhang; Huang, Yonggang; Gereau, Robert W; Ha, Jeong Sook; Bruchas, Michael R; Rogers, John A

    2017-02-08

    In vivo optogenetics provides unique, powerful capabilities in the dissection of neural circuits implicated in neuropsychiatric disorders. Conventional hardware for such studies, however, physically tethers the experimental animal to an external light source, limiting the range of possible experiments. Emerging wireless options offer important capabilities that avoid some of these limitations, but the current size, bulk, weight, and wireless area of coverage is often disadvantageous. Here, we present a simple but powerful setup based on wireless, near-field power transfer and miniaturized, thin, flexible optoelectronic implants, for complete optical control in a variety of behavioral paradigms. The devices combine subdermal magnetic coil antennas connected to microscale, injectable light-emitting diodes (LEDs), with the ability to operate at wavelengths ranging from UV to blue, green-yellow, and red. An external loop antenna allows robust, straightforward application in a multitude of behavioral apparatuses. The result is a readily mass-producible, user-friendly technology with broad potential for optogenetics applications. Copyright © 2017 Elsevier Inc. All rights reserved.

  2. Concept of Quantum Geometry in Optoelectronic Processes in Solids: Application to Solar Cells.

    Nagaosa, Naoto; Morimoto, Takahiro

    2017-07-01

    The concept of topology is becoming more and more relevant to the properties and functions of electronic materials including various transport phenomena and optical responses. A pedagogical introduction is given here to the basic ideas and their applications to optoelectronic processes in solids. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    Wan, Shanhong

    2015-01-01

    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  4. Granulometric composition study of mineral resources using opto-electronic devices and Elsieve software system

    Kaminski Stanislaw

    2016-01-01

    Full Text Available The use of mechanical sieves has a great impact on measurement results because occurrence of anisometric particles causes undercounting the average size. Such errors can be avoided by using opto-electronic measuring devices that enable measurement of particles from 10 μm up to a few dozen millimetres in size. The results of measurement of each particle size fraction are summed up proportionally to its weight with the use of Elsieve software system and for every type of material particle-size distribution can be obtained. The software allows further statistical interpretation of the results. Beam of infrared radiation identifies size of particles and counts them precisely. Every particle is represented by an electronic impulse proportional to its size. Measurement of particles in aqueous suspension that replaces the hydrometer method can be carried out by using the IPS L analyser (range from 0.2 to 600 μm. The IPS UA analyser (range from 0.5 to 2000 μm is designed for measurement in the air. An ultrasonic adapter enables performing measurements of moist and aggregated particles from 0.5 to 1000 μm. The construction and software system allow to determine second dimension of the particle, its shape coefficient and specific surface area. The AWK 3D analyser (range from 0.2 to 31.5 mm is devoted to measurement of various powdery materials with subsequent determination of particle shape. The AWK B analyser (range from 1 to 130 mm measures materials of thick granulation and shape of the grains. The presented method of measurement repeatedly accelerates and facilitates study of granulometric composition.

  5. Synthesis and Optoelectronic Applications of Graphene/Transition Metal Dichalcogenides Flat-Pack Assembly

    Li, Henan

    2017-11-16

    Being a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.

  6. Synthesis and Optoelectronic Applications of Graphene/Transition Metal Dichalcogenides Flat-Pack Assembly

    Li, Henan; Shi, Yumeng; Li, Lain-Jong

    2017-01-01

    Being a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.

  7. Systematic ab initio study of half-Heusler materials for optoelectronic applications

    Gruhn, Thomas; Felser, Claudia [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg University, Mainz (Germany)

    2010-07-01

    The development of new, optimized optoelectronic devices depends crucially on the availability of semiconductors with taylored electronic and structural properties. At the moment, the majority of applications is based on a rather small set of semiconducting materials, while many more semiconductors exist in the huge class of ternary compounds. Especially, the class of 8-electron half-Heusler materials comprises a large number semiconducters with various properties. With the help of ab initio density functional theory we have studied essentially all 8-electron half-Heusler compounds that are of technological relevance. For more than 650 compounds we have determined the optimum configuration by varying the lattice constant and permuting the elements over the sublattices. Within this exceptionally large data set we have studied the band structure and the lattice constants as a function of the electronegativities of the elements, the arrangement of the atoms, and the atomic radii. The results are used to select suitable materials for the buffer layer in thin-film solar cells with a Cu(In,Ga)Se{sub 2} (CIGS) absorber layer. Considering the bandgap and the geometrical matching with the CIGS film, we have obtained a set of 29 compounds that are promissing materials for cadmium-free CIGS buffer layer.

  8. Peptides and polypeptides as scaffolds for optoelectronics and biomaterials applications

    Charati, Manoj B.

    Peptides and polypeptides are emerging as a new class of biomaterials due to their unique structural, physiochemical, mechanical, and biological properties. The development of peptide and protein-based biomaterials is driven by the convergence of convenient techniques for peptide/protein engineering and its importance in applications as smart biomaterials. The thesis is divided in two parts; the first part highlights the importance of incorporation of non-natural amino acids into peptides and proteins. In particular, incorporation on p-bromophenylalanine in short alpha-helical peptide templates to control the association of chromophores is discussed. In the second part, design of a multi-component, biocompatible polypeptide with superior elasticity is discussed. Part 1. Novel peptide templates to control association of chromophores. Tailor made peptide and protein materials have many versatile applications, as both conformation and functional group position can be controlled. Such control may have intriguing applications in the development of hybrid materials for electroactive applications. A critical need in fabricating devices from organic semiconducting materials is to achieve control over the conformation and distance between two conjugated chains. Controlling chromophore spacing and orientation with required precision over nanometer length scale poses a greater challenge. Here we propose a peptide based template to control the alignment of the methylstilbene and Oxa-PPV chromophores with desired orientations and spacing. The hybrid peptides were characterized via CD, exciton coupled CD, 1H NMR and photoluminescence experiments. It is observed that slight change in the orientation of molecules has pronounced effect on the photo-physical behavior of the molecules. Characterization of the hybrid peptides via circular dichroism (CD) confirmed the helical character of the designed peptides and indicated that inclusion of non-natural amino acids has significant

  9. Thin film device applications

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  10. Synthesis and optoelectronic properties of oxadiazole-functionalized iridium complexes in the poly(vinylcarbazole)-hosted devices

    Wu Zhonglian; Luo Cuiping; Jiang Changyun; Zhu Meixiang; Cao, Yong; Zhu Weiguo

    2008-01-01

    A class of oxadiazole-functionalized iridium complexes was used as phosphor emitters in poly (vinylcarbazole)-hosted devices. Efficient green electrophosphorescences were achieved in the devices with a maximum luminance efficiency of 9.3 cd/A at 10.6 mA/cm 2 and brightness of 3882 cd/m 2 at 92.1 mA/cm 2 . More importantly, the iridium complexes-doped devices exhibited a low turn-on voltage of 7.0 V and an applied voltage of 9.2 V at 500 cd/m 2 . The good optoelectronic properties of the complexes were attributed to the enhanced electron-injection and transport properties resulting from the effect of oxadiazole ligands in the complexes

  11. Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications

    Romeira, B.; Figueiredo, J. M. L.; Javaloyes, J.

    2017-01-01

    With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this ...

  12. Optoelectronics applications in multimedia shooting training systems: SPARTAN

    Glogowski, Tomasz; Hlosta, Pawel; Stepniak, Slawomir; Swiderski, Waldemar

    2017-10-01

    Multimedia shooting training systems are increasingly being used in the training of security staff and uniformed services. An advanced practicing-training system SPARTAN for simulation of small arms shooting has been designed and manufactured by Autocomp Management Ltd. and Military Institute of Armament Technology for the Polish Ministry of National Defence. SPARTAN is a stationary device designed to teach, monitor and evaluate the targeting of small arms and to prepare soldiers for: • firing the live ammunition at open ranges for combat targets and silhouettes • detection, classification and engagement of real targets upon different terrains, weather conditions and periods during the day • team work as a squad during the mission by using different types of arms • suitable reactions in untypical scenarios. Placed in any room the training set consists of: • the projection system that generates realistic 3D imaging of the battlefield (such as combat shooting range) in high-resolution • system that tracks weapons aiming points • sound system which delivers realistic mapping of acoustic surroundings • operator station with which the training is conducted and controlled • central processing unit based on PC computers equipped with specialist software realizing individual system functions • units of smart weapons equipped with radio communication modules, injection laser diodes and pneumatic reloading system. The system make possible training by firing in dynamic scenarios, using combat weapons and live ammunition against visible targets moving on a screen. The use of infrared camera for detecting the position of impact of a projectile.

  13. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

    Horsley, Kimberly Anne

    Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

  14. Mid-infrared Semiconductor Optoelectronics

    Krier, Anthony

    2006-01-01

    The practical realisation of optoelectronic devices operating in the 2–10 µm (mid-infrared) wavelength range offers potential applications in a variety of areas from environmental gas monitoring around oil rigs and landfill sites to the detection of pharmaceuticals, particularly narcotics. In addition, an atmospheric transmission window exists between 3 µm and 5 µm that enables free-space optical communications, thermal imaging applications and the development of infrared measures for "homeland security". Consequently, the mid-infrared is very attractive for the development of sensitive optical sensor instrumentation. Unfortunately, the nature of the likely applications dictates stringent requirements in terms of laser operation, miniaturisation and cost that are difficult to meet. Many of the necessary improvements are linked to a better ability to fabricate and to understand the optoelectronic properties of suitable high-quality epitaxial materials and device structures. Substantial progress in these m...

  15. MOVPE growth and characterisation of ZnO properties for optoelectronic applications

    Oleynik, N.

    2007-03-07

    In this work a new Metalorganic Vapor Phase Epitaxy (MOVPE) method was developed for the growth and doping of high-quality ZnO films. ZnO is a unique optoelectronic material for the effective light generation in the green to the UV spectral range. Optoelectronic applications of ZnO require impurity-free monocrystalline films with smooth surfaces and low concentration of the defects in the crystal lattice. At the beginning of this work only few reports on MOVPE growth of polycrystalline ZnO existed. The low quality of ZnO is attributed to the lack of an epitaxially matched substrate, and gas-phase prereactions between the Zn- and O-precursors. To achieve control over the ZnO quality, several O-precursors were tested for the growth on GaN/Si(111) or GaN/Sapphire substrates at different reactor temperatures and pressures. ZnO layers with XRD rocking curve FWHMs of the (0002) reflection of 180'' and narrow cathodoluminescence of 1.3 meV of the dominant I{sub 8} emission were synthesized using a two-step growth procedure. In this procedure, ZnO is homoepitaxially grown at high temperature using N{sub 2}O as O-precursor on a low temperature grown ZnO buffer layer using tertiary-butanol as O-precursor. p-Type doping of ZnO, which usually exhibits n-type behaviour, is very difficult. This doping asymmetry represents an issue for ZnO-based devices. Beginning from 1992, a growing number of reports have been claiming a fabrication of p-type ZnO, but, due to the missing reproducibilty, they are still questionable. Native defects, non-stoichiometry, and hydrogen are sources of n-type conductivity of ZnO. Together with a low solubility of the potential p-type dopants and deep position of impurity levels, these factors partly explain p-type doping difficulties in ZnO. However, there is no fully described mechanism of the ZnO doping asymmetry yet. In this work, NH{sub 3}, unsymmetrical dimethylhydrazine (UDMHy), diisobutylamine, and NO nitrogen precursors were studied

  16. Exciton confinement in organic dendrimer quantum wells for opto-electronic applications

    Lupton, J. M.; Samuel, I. D. W.; Burn, P. L.; Mukamel, S.

    2002-01-01

    Organic dendrimers are a fascinating new class of materials for opto-electronic applications. We present coupled electronic oscillator calculations on novel nanoscale conjugated dendrimers for use in organic light-emitting diodes. Strong confinement of excitations at the center of the dendrimers is observed, which accounts for the dependence of intermolecular interactions and charge transport on the degree of branching of the dendrimer. The calculated absorption spectra are in excellent agreement with the measured data and show that benzene rings are shared between excitations on the linear segments of the hyperbranched molecules. The coupled electronic oscillator approach is ideally suited to treat large dendritic molecules.

  17. Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices

    Beljonne, David

    2011-02-08

    We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational techniques used to assess the morphology of organic: organic heterojunctions; we highlight the compromises that are necessary to handle large systems and multiple time scales while preserving the atomistic details required for subsequent computations of the electronic and optical properties. We then review some recent theoretical advances in describing the ground-state electronic structure at heterojunctions between donor and acceptor materials and highlight the role played by charge-transfer and long-range polarization effects. Finally, we discuss the modeling of the excited-state electronic structure at organic:organic interfaces, which is a key aspect in the understanding of the dynamics of photoinduced electron-transfer processes. © 2010 American Chemical Society.

  18. Exploring single-layered SnSe honeycomb polymorphs for optoelectronic and photovoltaic applications

    Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Shkir, Mohd.

    2018-02-01

    Single-layered tin selenide that shares the same structure with phosphorene and possesses intriguing optoelectronic properties has received great interest as a two-dimensional material beyond graphene and phosphorene. Herein, we explore the optoelectronic response of the newly discovered stable honeycomb derivatives (such as α , β , γ , δ , and ɛ ) of single-layered SnSe in the framework of density functional theory. The α , β , γ , and δ derivatives of a SnSe monolayer have been found to exhibit an indirect band gap, however, the dispersion of their band-gap edges demonstrates multiple direct band gaps at a relatively high energy. The ɛ -SnSe, however, features an intrinsic direct band gap at the high-symmetry Γ point. Their energy band gaps (0.53, 2.32, 1.52, 1.56, and 1.76 eV for α -, β -, γ -, δ -, and ɛ -SnSe, respectively), calculated at the level of the Tran-Blaha modified Becke-Johnson approach, mostly fall right in the visible range of the electromagnetic spectrum and are in good agreement with the available literature. The optical spectra of these two-dimensional (2D) SnSe polymorphs (besides β -SnSe) are highly anisotropic and possess strictly different optical band gaps along independent diagonal components. They show high absorption in the visible and UV ranges. Similarly, the reflectivity, refraction, and optical conductivities inherit strong anisotropy from the dielectric functions as well and are highly visible-UV polarized along the cartesian coordinates, showing them to be suitable for optical filters, polarizers, and shields against UV radiation. Our investigations suggest these single-layered SnSe allotropes as a promising 2D material for next-generation nanoscale optoelectronic and photovoltaic applications beyond graphene and phosphorene.

  19. Co-deposition methods for the fabrication of organic optoelectronic devices

    Thompson, Mark E.; Liu, Zhiwei; Wu, Chao

    2016-09-06

    A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.

  20. Temperature-Dependent Electric Field Poling Effects in CH3NH3PbI3 Optoelectronic Devices.

    Zhang, Chuang; Sun, Dali; Liu, Xiaojie; Sheng, Chuan-Xiang; Vardeny, Zeev Valy

    2017-04-06

    Organo-lead halide perovskites show excellent optoelectronic properties; however, the unexpected inconsistency in forward-backward I-V characteristics remains a problem for fabricating solar panels. Here we have investigated the reasons behind this "hysteresis" by following the changes in photocurrent and photoluminescence under electric field poling in transverse CH 3 NH 3 PbI 3 -based devices from 300 to 10 K. We found that the hysteresis disappears at cryogenic temperatures, indicating the "freeze-out" of the ionic diffusion contribution. When the same device is cooled under continuous poling, the built-in electric field from ion accumulation brings significant photovoltaic effect even at 10 K. From the change of photoluminescence upon polling, we found a second dipole-related mechanism which enhances radiative recombination upon the alignment of the organic cations. The ionic origin of hysteresis was also verified by applying a magnetic field to affect the ion diffusion. These findings reveal the coexistence of ionic and dipole-related mechanisms for the hysteresis in hybrid perovskites.

  1. Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

    Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

    2017-11-01

    Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

  2. Electrochemistry, polymers and opto-electronic devices: a combination with a future

    De Paoli Marco-A.

    2002-01-01

    Full Text Available Electrochemistry came into life with the invention of the pile, by Volta in 1800. He combined different metal discs with a piece of tissue, swollen with an aqueous salt solution. The so-called Pila di Volta used a polymer for the first time in an electrochemical device and can be seen as a powerful idea to create new devices. Recently, polymers became an alternative to make thin and flexible devices. Thus, we find transparent plastic electrodes based on poly(ethylene terephtalate coated with a transition metal oxide. There are also polymer electrolytes based on complexes of inorganic salts and poly(ethylene oxide derivatives, with reasonable ionic conductivity in the absence of solvents. Finally, the electroactive polymers are efficient substitutes for the inorganic semiconductors because they can be synthetically tailored to produce the desired electronic answer. Combining these materials it is possible to assemble different types of electro-optical devices, like electrochromic, photoelectrochemical and light-emitting electrochemical cells.

  3. Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

    Mumthaz Muhammed, Mufasila

    2018-01-01

    performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique

  4. Sol-gel synthesized ZnO for optoelectronics applications: a characterization review

    Harun, Kausar; Hussain, Fayaz; Purwanto, Agus; Sahraoui, Bouchta; Zawadzka, Anna; Azmin Mohamad, Ahmad

    2017-12-01

    The rapid growth in green technology has resulted in a marked increase in the incorporation of ZnO in energy and optoelectronic devices. Research involving ZnO is being given renewed attention in the quest to fully exploit its promising properties. The purity and state of defects in the ZnO system are optimized through several modifications to the synthesis conditions and the starting materials. These works have been verified through a series of characterizations. This review covers the essential characterization outcomes of pure ZnO nanoparticles. Emphasis is placed on recent techniques, examples and some issues concerning sol-gel synthesized ZnO nanoparticles. Thermal, phase, structural and morphological observations are combined to ascertain the level of purity of ZnO. The subsequent elemental and optical characterizations are also discussed. This review would be the collective information and suggestions at one place for investigators to focus on the best development of ZnO-based optical and energy devices.

  5. NASA Electronic Parts and Packaging (NEPP): Space Qualification Guidelines of Optoelectronic and Photonic Devices for Optical Communication Systems

    Kim, Quiesup

    2001-01-01

    Key elements of space qualification of opto-electric and photonic optical devices were overviewed. Efforts were concentrated on the reliability concerns of the devices needed for potential applications in space environments. The ultimate goal for this effort is to gradually establish enough data to develop a space qualification plan of newly developed specific photonic parts using empirical and numerical models to assess the life-time and degradation of the devices for potential long term space missions.

  6. Device Applications of Nonlinear Dynamics

    Baglio, Salvatore

    2006-01-01

    This edited book is devoted specifically to the applications of complex nonlinear dynamic phenomena to real systems and device applications. While in the past decades there has been significant progress in the theory of nonlinear phenomena under an assortment of system boundary conditions and preparations, there exist comparatively few devices that actually take this rich behavior into account. "Device Applications of Nonlinear Dynamics" applies and exploits this knowledge to make devices which operate more efficiently and cheaply, while affording the promise of much better performance. Given the current explosion of ideas in areas as diverse as molecular motors, nonlinear filtering theory, noise-enhanced propagation, stochastic resonance and networked systems, the time is right to integrate the progress of complex systems research into real devices.

  7. A hybrid organic-inorganic electrode for enhanced charge injection or collection in organic optoelectronic devices

    Yilmaz, Omer F; Chaudhary, Sumit; Ozkan, Mihrimah

    2006-01-01

    Here we report a novel hybrid organic-inorganic anode for organic light-emitting diodes (LEDs) and photovoltaic (PV) cells. This hybrid anode structure is realized from a composite of poly(3,4-ethylene dioxythiophene) doped with polystyrenesulfonic acid (PEDOT:PSS) and indium tin oxide (ITO) nanoparticles. Owing to the phase separation, this anodic structure leads to a graded work function from patterned ITO to the photoactive polymer, which in turn reduces the barrier height for holes by ∼70%. The resulting devices based on this design show up to 67% reduction in turn-on voltage (for polymer LEDs) and up to 40% increase in short-circuit current and power conversion efficiency (for PV cells). Current-voltage characteristics, Fowler-Nordheim analysis, SEM imaging and energy band diagram analysis are employed to characterize the improved performance of our devices. The reported approach is expected to be immensely useful for the molecular design of next-generation efficient organic devices

  8. Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

    Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

    2017-03-01

    We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

  9. Optoelectronic stereoscopic device for diagnostics, treatment, and developing of binocular vision

    Pautova, Larisa; Elkhov, Victor A.; Ovechkis, Yuri N.

    2003-08-01

    Operation of the device is based on alternative generation of pictures for left and right eyes on the monitor screen. Controller gives pulses on LCG so that shutter for left or right eye opens synchronously with pictures. The device provides frequency of switching more than 100 Hz, and that is why the flickering is absent. Thus, a separate demonstration of images to the left eye or to the right one in turn is obtained for patients being unaware and creates the conditions of binocular perception clsoe to natural ones without any additional separation of vision fields. LC-cell transfer characteristic coodination with time parameters of monitor screen has enabled to improve stereo image quality. Complicated problem of computer stereo images with LC-glasses is so called 'ghosts' - noise images that come to blocked eye. We reduced its influence by adapting stereo images to phosphor and LC-cells characteristics. The device is intended for diagnostics and treatment of stabismus, amblyopia and other binocular and stereoscopic vision impairments, for cultivating, training and developing of stereoscopic vision, for measurements of horizontal and vertical phoria, phusion reserves, the stereovision acuity and some else, for fixing central scotoma borders, as well as suppression scotoma in strabismus too.

  10. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  11. Effects of Long-Term Static Bending Deformation on a Barrier Thin Film for Flexible Organic Optoelectronic Devices

    Hung-I Lu

    2018-03-01

    Full Text Available The objective of this study is to investigate the effect of long-term static bending on the encapsulation properties of a commercial barrier thin film for flexible optoelectronic devices. Encapsulation properties of the barrier film are evaluated under long-term static bending at various radii of curvature. Experimental results reveal that no significantly detrimental effect on the water vapor transmission rate (WVTR at 40 °C and 90% RH is found for compressive bending up to 1000 h and for tensile bending up to 100 h with a radius of curvature of 5 mm or larger. However, WVTR of the barrier thin film is significantly increased and cracks are found in the barrier film when subjected to tensile bending of a radius of 10 mm or 5 mm for 1000 h. The expected WVTR of the given barrier thin film is numerically computed using a three-dimensional (3D finite element model. Numerical results indicate that, with the presence of cracks in the barrier thin film, the WVTR increases for an apparent increase in moisture entrances. The WVTR calculated by the 3D cracking model concurs with the experimental results.

  12. Latest developments in GaN-based quantum devices for infrared optoelectronics

    Monroy, Eva; Guillot, Fabien; Leconte, Sylvain; Nevou, Laurent; Doyennette, Laeticia; Tchernycheva, Maria; Julien, François H.; Baumann, Esther; Giorgetta, Fabrizio R.; Hofstetter, Daniel

    2011-01-01

    In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quantum well and quantum dot superlattices by plasma-assisted molecular-beam epitaxy. Then, we present the performance of nitride-based infrared photodetectors and electro-optical modulators operating at 1.55 μm. Finally, we discuss the progress towards intersubband light emitters, incl...

  13. Modelling of optoelectronic circuits based on resonant tunneling diodes

    Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

    2017-08-01

    Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

  14. Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering

    Tsai, Chia-Lung; Lu, Yi-Chen; Hsiung Chang, Sheng

    2018-07-01

    Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m‑2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.

  15. High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2018-03-01

    Gallium-doped ZnO (GZO) thin films of thickness 394 nm were prepared by a simple, cost-effective sol-gel spin coating method. The effect of 8 MeV electron beam irradiation with different irradiation doses ranging from 0 to 10 kGy on the structural, optical and electrical properties was investigated. Electron irradiation influences the changes in the structural properties and surface morphology of GZO thin films. X-ray diffraction analysis showed that the polycrystalline nature of the GZO films is unaffected by the high energy electron irradiation. The grain size and the surface roughness were found maximum for the GZO film irradiated with 10 kGy electron dosage. The average transmittance of GZO thin films decreased after electron irradiation. The optical band gap of Ga-doped ZnO films was decreased with the increase in the electron dosage. The electrical resistivity of GZO films decreased from 4.83 × 10-3 to 8.725 × 10-4 Ω cm, when the electron dosage was increased from 0 to 10 kGy. The variation in the optical and electrical properties in the Ga-doped ZnO thin films due to electron beam irradiation in the present study is useful in deciding their compatibility in optoelectronic device applications in electron radiation environment.

  16. Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

    Kioupakis, Emmanouil; Yan, Qimin; Steiauf, Daniel; Van de Walle, Chris G

    2013-01-01

    Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their performance at high power is affected by the efficiency-droop problem. Previous experimental and theoretical work has identified Auger recombination, a three-particle nonradiative carrier recombination mechanism, as the likely cause of the droop. In this work, we use first-principles calculations to elucidate the dependence of the radiative and Auger recombination rates on temperature, carrier density and quantum-well confinement. Our calculated data for the temperature dependence of the recombination coefficients are in good agreement with experiment and provide further validation on the role of Auger recombination in the efficiency reduction. Polarization fields and phase-space filling negatively impact device efficiency because they increase the operating carrier density at a given current density and increase the fraction of carriers lost to Auger recombination. (paper)

  17. Cubic boron nitride (cBN) - A new material for advanced optoelectronic devices. Properties and perspectives

    Nistor, S.V.; Nistor, L.C.; Dinca, G.

    2001-01-01

    Cubic boron nitride (cBN) exhibits, besides exceptional thermal and mechanical properties similar to diamond, an excellent ability to be n or p doped, which makes it a strong candidate for advanced, high - temperature optical and microelectronic devices. Despite its outstanding characteristics, there are quite a few reports concerning the physical properties of cBN. This is partly due to the absence of natural cBN gems and the extreme difficulties in producing enough large (mm 3 sized) single crystals, or single phase thin films, for physical characterization. The state of the art knowledge concerning the basic properties of crystalline cBN, as well as our recent results of microstructure and defect properties studies will be presented. (authors)

  18. Single-photon superradiance and cooperative Lamb shift in an optoelectronic device (Conference Presentation)

    Sirtori, Carlo

    2017-02-01

    Superradiance is one of the many fascinating phenomena predicted by quantum electrodynamics that have first been experimentally demonstrated in atomic systems and more recently in condensed matter systems like quantum dots, superconducting q-bits, cyclotron transitions and plasma oscillations in quantum wells (QWs). It occurs when a dense collection of N identical two-level emitters are phased via the exchange of photons, giving rise to enhanced light-matter interaction, hence to a faster emission rate. Of great interest is the regime where the ensemble interacts with one photon only and therefore all of the atoms, but one, are in the ground state. In this case the quantum superposition of all possible configurations produces a symmetric state that decays radiatively with a rate N times larger than that of the individual oscillators. This phenomenon, called single photon superradiance, results from the exchange of real photons among the N emitters. Yet, to single photon superradiance is also associated another collective effect that renormalizes the emission frequency, known as cooperative Lamb shift. In this work, we show that single photon superradiance and cooperative Lamb shift can be engineered in a semiconductor device by coupling spatially separated plasma resonances arising from the collective motion of confined electrons in QWs. These resonances hold a giant dipole along the growth direction z and have no mutual Coulomb coupling. They thus behave as a collection of macro-atoms on different positions along the z axis. Our device is therefore a test bench to simulate the low excitation regime of quantum electrodynamics.

  19. Chemical vapor deposition growth of single-crystalline cesium lead halide microplatelets and heterostructures for optoelectronic applications

    Yiliu Wang; Xun Guan; Dehui Li; Hung-Chieh Cheng; Xidong Duan; Zhaoyang Lin; Xiangfeng Duan

    2017-01-01

    Orgaruc-inorganic hybrid halide perovskites,such as CH3NH3PbI3,have emerged as an exciting class of materials for solar photovoltaic applications;however,they are currently plagued by insufficient environmental stability.To solve this issue,all-inorganic halide perovskites have been developed and shown to exhibit significantly improved stability.Here,we report a single-step chemical vapor deposition growth of cesium lead halide (CsPbX3) microcrystals.Optical microscopy studies show that the resulting perovskite crystals predominantly adopt a square-platelet morphology.Powder X-ray diffraction (PXRD) studies of the resulting crystals demonstrate a highly crystalline nature,with CsPbC13,CsPbBr3,and CsPbI3 showing tetragonal,monoclinic,and orthorhombic phases,respectively.Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies show that the resulting platelets exhibit well-faceted structures with lateral dimensions of the order of 10-50 μm,thickness around 1 μm,and ultra-smooth surface,suggesting the absence of obvious grain boundaries and the single-crystalline nature of the individual microplatelets.Photoluminescence (PL) images and spectroscopic studies show a uniform and intense emission consistent with the expected band edge transition.Additionally,PL images show brighter emission around the edge of the platelets,demonstrating a wave-guiding effect in high-quality crystals.With a well-defined geometry and ultra-smooth surface,the square platelet structure can function as a whispering gallery mode cavity with a quality factor up to 2,863 to support laser emission at room temperature.Finally,we demonstrate that such microplatelets can be readily grown on a variety of substrates,including silicon,graphene,and other two-dimensional materials such as molybdenum disulfide,which can readily allow the construction of heterostructure optoelectronic devices,including a graphene/perovskite/ graphene vertically-stacked photodetector with

  20. Microstructure of III-N semiconductors related to their applications in optoelectronics

    Leszczynski, M.; Czernetzki, R.; Sarzynski, M.; Krysko, M.; Targowski, G.; Prystawko, P.; Bockowski, M.; Grzegory, I.; Suski, T.; Domagala, J.; Porowski, S.

    2005-03-01

    There has been more than a decade since Shuji Nakamura from Japanese company Nichia constructed the first blue LED based on structure of (AlGaIn)N semiconductor and eight years since he made the first blue laser diode (LD). This work gives a survey on the current technological status with green/blue/violet/UV optoelectronics based on III-N semiconductors in relation with their microstructure. The following devices are presented: i) Low-power green and blue LEDs, ii) High-power LEDs targeting solid-state white lighting, iii) Low-power violet LDs for high definition DVD market, iv) High-power violet LDs, v) UV LEDs. The discussion will be focused on three main technological problems related to the microstructure of (AlGaIn)N layers in emitters based on III-N semiconductors: i) high density of dislocations in epitaxial layers of GaN on foreign substrates (sapphire, SiC, GaAs), ii), presence of strains, iii) atom segregation in ternary and quaternary compounds.

  1. Organic semiconductor photodiode based on indigo carmine/n-Si for optoelectronic applications

    Ganesh, V.; Manthrammel, M. Aslam; Shkir, Mohd.; Yahia, I. S.; Zahran, H. Y.; Yakuphanoglu, F.; AlFaify, S.

    2018-06-01

    The fabrication of indigo carmine/n-Si photodiode has been done, and a robust dark and photocurrent-voltage ( I- V), capacitance vs. voltage ( C-V) and conductance vs. voltage ( G-V) studies were done over a wide range of applied voltage and frequencies. The surface morphology was assessed by atomic force microscope (AFM), and the grain size was measured to be about 66 nm. The reverse current increased with both increasing illumination intensity and bias potential, whereas the forward current increased exponentially with bias potential. The responsivity value was also calculated. Barrier height and ideality factor of diode were estimated through a log (I) vs log (V) plot, and obtained to be 0.843 and 4.75 eV, respectively. The Vbi values are found between 0.95 and 1.2V for frequencies ranging between 100 kHz and 1 MHz. The value of R s is found to be lower at higher frequencies which may be due to a certain distribution of localized interface states. A strong frequency and voltage dependency were observed for interface states density N ss in the present indigo carmine/n-Si photodiode, and this explained the observed capacitance and resistance variation with frequency. These results suggest that the fabricated diode has the potential to be applied in optoelectronic devices.

  2. Structural and Optoelectronic Properties of Cubic CsPbF3 for Novel Applications

    Murtaza, G.; Ahmad, Iftikhar; Maqbool, M.; Rahnamaye Aliabad, H. A.; Afaq, A.

    2011-01-01

    Chemical bonding as well as structural, electronic and optical properties of CsPbF 3 are calculated using the highly accurate full potential linearized augmented plane-wave method within the framework of density functional theory (DFT). The calculated lattice constant is found to be in good agreement with the experimental results. The electron density plots reveal strong ionic bonding in Cs-F and strong covalent bonding in Pb-F. The calculations show that the material is a direct and wide bandgap semiconductor with a fundamental gap at the R-symmetry point. Optical properties such as the real and imaginary parts of the dielectric function, refractive index, extinction coefficient, reflectivity, optical conductivity and absorption coefficient are also calculated. Based on the calculated wide and direct bandgap, as well as other optical properties of the compound, it is predicted that CsPbF 3 is suitable for optoelectronic devices and anti-reflecting coatings. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Optoelectronic Mounting Structure

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  4. Electron microscopy study of advanced heterostructures for optoelectronics

    Katcki, J.; Ratajczak, J.; Phillipp, F.; Muszalski, J.; Bugajski, M.; Chen, J.X.; Fiore, A.

    2003-01-01

    The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots,

  5. Biomedical devices and their applications

    2004-01-01

    This volume introduces readers to the basic concepts and recent advances in the field of biomedical devices. The text gives a detailed account of novel developments in drug delivery, protein electrophoresis, estrogen mimicking methods and medical devices. It also provides the necessary theoretical background as well as describing a wide range of practical applications. The level and style make this book accessible not only to scientific and medical researchers but also to graduate students.

  6. ZnO thin films and nanostructures for emerging optoelectronic applications

    Rogers, D. J.; Teherani, F. H.; Sandana, V. E.; Razeghi, M.

    2010-02-01

    ZnO-based thin films and nanostructures grown by PLD for various emerging optoelectronic applications. AZO thin films are currently displacing ITO for many TCO applications due to recent improvements in attainable AZO conductivity combined with processing, cost and toxicity advantages. Advances in the channel mobilities and Id on/off ratios in ZnO-based TTFTs have opened up the potential for use as a replacement for a-Si in AM-OLED and AM-LCD screens. Angular-dependent specular reflection measurements of self-forming, moth-eye-like, nanostructure arrays grown by PLD were seen to have green gap in InGaN-based LEDs was combated by substituting low Ts PLD n-ZnO for MOCVD n-GaN in inverted hybrid heterojunctions. This approach maintained the integrity of the InGaN MQWs and gave LEDs with green emission at just over 510 nm. Hybrid n-ZnO/p-GaN heterojunctions were also seen to have the potential for UV (375 nm) EL, characteristic of ZnO NBE emission. This suggests that there was significant hole injection into the ZnO and that such LEDs could profit from the relatively high exciton binding energy of ZnO.

  7. Photo-induced changes in nano-copper oxide for optoelectronic applications

    Hendi, A. A.; Rashad, M.

    2018-06-01

    Copper oxide (CuO) nanoparticles (NPs) have been prepared using microwave irradiation. A mother material was copper nitrate in distilled water. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used for characterizing the NPs powders. Thermal Gravimetric Analysis (TGA) and Differential Thermal Analysis (DTA) were measured for as-prepared CuO NPs. The obtained oxides NPs were confirmed produced during chemical precipitation by these characterizions. These NPs were dropped on top of glass substrate for measuring the optical characterizions. Both linear and nonlinear optical properties of the as-prepared CuO NP films were studied. The optical energy gap of the as-prepared CuO NP films is equal to 3.98 eV, which is higher than that of the bulk material. The effect of ultraviolet (UV) light irradiation on the CuO NP films was investigated at 2 and 5 h for study the photo-induced effect. The optical properties of CuO NP films were measured as a function of these UV irradiation time. The optical constants for as-prepared and irradiated CuO NP films were calculated which reflect the affect of UV irradiation time. As observed from these optical results, a highly forced for optoelectronic applications.

  8. Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

    Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

    Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

  9. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2016-04-30

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  10. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    Garcés, F.A.; Budini, N.; Schmidt, J.A.; Arce, R.D.

    2016-01-01

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  11. Photo-stability of CsPbBr3 perovskite quantum dots for optoelectronic application

    Chen, Junsheng; Liu, Dongzhou; Al-Marri, Mohammed J.; Nuuttila, Lauri; Lehtivuori, Heli; Zheng, Kaibo

    Due to their superior photoluminescence (PL) quantum yield (QY) and tunable optical band gap, all-inorganic CsPbBr3 perovskite quantum dots (QDs) have attracted intensive attention for the application in solar cells, light emitting diodes (LED), photodetectors and laser devices. In this scenario,

  12. Semiconductor opto-electronics

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  13. High speed serdes devices and applications

    Stauffer, David R; Sorna, Michael A; Dramstad, Kent; Ogilvie, Clarence Rosser; Amanullah, Mohammad; Rockrohr, James Donald

    2008-01-01

    Offers an understanding of the features and functions typically found on HSS devices. This book explains how these HSS devices are used in protocol applications and the analysis which must be performed to use such HSS devices.

  14. Terahertz optoelectronics with surface plasmon polariton diode.

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  15. Supramolecular core-shell nanoparticles for photoconductive device applications

    Cheng, Chih-Chia; Chen, Jem-Kun; Shieh, Yeong-Tarng; Lee, Duu-Jong

    2016-08-01

    We report a breakthrough discovery involving supramolecular-based strategies to construct novel core-shell heterojunction nanoparticles with hydrophilic adenine-functionalized polythiophene (PAT) as the core and hydrophobic phenyl-C61-butyric acid methyl ester (PCBM) as the shell, which enables the conception of new functional supramolecular assemblies for constructing functional nanomaterials for applications in optoelectronic devices. The generated nanoparticles exhibit uniform spherical shape, well-controlled tuning of particle size with narrow size distributions, and excellent electrochemical stability in solution and the solid state owing to highly efficient energy transfer from PAT to PCBM. When the PAT/PCBM nanoparticles were fabricated into a photoconducting layer in an electronic device, the resulting device showed excellent electric conduction characteristics, including an electrically-tunable voltage-controlled switch, and high short-circuit current and open-circuit voltage. These observations demonstrate how the self-assembly of PAT/PCBM into specific nanostructures may help to promote efficient charge generation and transport processes, suggesting potential for a wide variety of applications as a promising candidate material for bulk heterojunction polymer devices.

  16. Ferromagnetic Swimmers - Devices and Applications

    Hamilton, Joshua; Petrov, Peter; Winlove, C. Peter; Gilbert, Andrew; Bryan, Matthew; Ogrin, Feodor

    2017-11-01

    Microscopic swimming devices hold promise for radically new applications in lab-on-a-chip and microfluidic technology, diagnostics and drug delivery etc. We propose a new class of autonomous ferromagnetic swimming devices, actuated and controlled solely by an oscillating magnetic field. Experimentally, these devices (3.6 mm) are based on a pair of interacting ferromagnetic particles of different size and different anisotropic properties joined by an elastic link and actuated by an external time-dependent magnetic field. The net motion is generated through a combination of dipolar interparticle gradient forces, time-dependent torque and hydrodynamic coupling. We investigate the dynamic performance of a prototype (3.6 mm) of the ferromagnetic swimmer in fluids of different viscosity as a function of the external field parameters and demonstrate stable propulsion over a wide range of Reynolds numbers. Manipulation of the external magnetic field resulted in robust control over the speed and direction of propulsion. We also demonstrate our ferromagnetic swimmer working as a macroscopic prototype of a microfluidic pump. By physically tethering the swimmer, instead of swimming, the swimmer generates a directional flow of liquid around itself.

  17. Tomographic device and application of this device

    Walters, R.G.

    1979-01-01

    The system operating with X-rays is suited for application in computer tomography. The radiation source emits a diverging beam of radiation scanning the patient that can be rotated about the patient. The detectors are arranged on a partial ring of 180 0 plus the beam angle and the angle between two neighboring detectors. The absorption data picked up by the detector are processes with a convolver function, fed back to an image store and represented on a monitor. (RW) [de

  18. Transparent Electrodes for Efficient Optoelectronics

    Morales-Masis, Monica

    2017-03-30

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  19. Transparent Electrodes for Efficient Optoelectronics

    Morales-Masis, Monica; De Wolf, Stefaan; Woods-Robinson, Rachel; Ager, Joel W.; Ballif, Christophe

    2017-01-01

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  20. Flexible devices: from materials, architectures to applications

    Zou, Mingzhi; Ma, Yue; Yuan, Xin; Hu, Yi; Liu, Jie; Jin, Zhong

    2018-01-01

    Flexible devices, such as flexible electronic devices and flexible energy storage devices, have attracted a significant amount of attention in recent years for their potential applications in modern human lives. The development of flexible devices is moving forward rapidly, as the innovation of methods and manufacturing processes has greatly encouraged the research of flexible devices. This review focuses on advanced materials, architecture designs and abundant applications of flexible devices, and discusses the problems and challenges in current situations of flexible devices. We summarize the discovery of novel materials and the design of new architectures for improving the performance of flexible devices. Finally, we introduce the applications of flexible devices as key components in real life. Project supported by the National Key R&D Program of China (Nos. 2017YFA0208200, 2016YFB0700600, 2015CB659300), the National Natural Science Foundation of China (Nos. 21403105, 21573108), and the Fundamental Research Funds for the Central Universities (No. 020514380107).

  1. Photonic Structure-Integrated Two-Dimensional Material Optoelectronics

    Tianjiao Wang

    2016-12-01

    Full Text Available The rapid development and unique properties of two-dimensional (2D materials, such as graphene, phosphorene and transition metal dichalcogenides enable them to become intriguing candidates for future optoelectronic applications. To maximize the potential of 2D material-based optoelectronics, various photonic structures are integrated to form photonic structure/2D material hybrid systems so that the device performance can be manipulated in controllable ways. Here, we first introduce the photocurrent-generation mechanisms of 2D material-based optoelectronics and their performance. We then offer an overview and evaluation of the state-of-the-art of hybrid systems, where 2D material optoelectronics are integrated with photonic structures, especially plasmonic nanostructures, photonic waveguides and crystals. By combining with those photonic structures, the performance of 2D material optoelectronics can be further enhanced, and on the other side, a high-performance modulator can be achieved by electrostatically tuning 2D materials. Finally, 2D material-based photodetector can also become an efficient probe to learn the light-matter interactions of photonic structures. Those hybrid systems combine the advantages of 2D materials and photonic structures, providing further capacity for high-performance optoelectronics.

  2. Structure and application of galvanomagnetic devices

    Weiss, H

    1969-01-01

    International Series of Monographs on Semiconductors, Volume 8: Structure and Application of Galvanomagnetic Devices focuses on the composition, reactions, transformations, and applications of galvanomagnetic devices. The book first ponders on basic physical concepts, design and fabrication of galvanomagnetic devices, and properties of galvanomagnetic devices. Discussions focus on changes in electrical properties on irradiation with high-energy particles, magnetoresistor field-plate, Hall generator, preparation of semiconductor films by vacuum deposition, structure of field-plate magnetoresist

  3. Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

    Georgiades, Nikos P.; Polzik, Eugene S.; Kimble, H. Jeff

    1999-02-02

    An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.

  4. Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at National Taipei University of Technology)

    Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division

    2016-11-14

    These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at National Taipei University of Technology. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

  5. Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at Center for Condensed Matter Sciences)

    Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division

    2016-11-14

    These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at Center for Condensed Matter Sciences. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

  6. Organic Synthetic Advanced Materials for Optoelectronic and Energy Applications (at National Sun Yat-sen University) 

    Yen, Hung-Ju [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Chemistry Division

    2016-11-14

    These slides cover Hung-Ju Yen's recent work in the synthesis and structural design of functional materials, which were further used for optoelectronic and energy applications, such as lithium ion battery, solar cell, LED, electrochromic, and fuel cells. This was for a job interview at National Sun Yat-sen University. The following topics are detailed: current challenges for lithium-ion batteries; graphene, graphene oxide and nanographene; nanographenes with various functional groups; fine tune d-spacing through organic synthesis: varying functional group; schematic view of LIBs; nanographenes as LIB anode; rate performance (charging-discharging); electrochromic technology; electrochromic materials; advantages of triphenylamine; requirement of electrochromic materials for practical applications; low driving voltage and long cycle life; increasing the electroactive sites by multi-step synthetic procedures; synthetic route to starburst triarylamine-based polyamide; electrochromism ranging from visible to NIR region; transmissive to black electrochromism; RGB and CMY electrochromism.

  7. Molecular Orientation of Conjugated Polymer Chains in Nanostructures and Thin Films: Review of Processes and Application to Optoelectronics

    Varun Vohra

    2017-01-01

    Full Text Available Semiconducting polymers are composed of elongated conjugated polymer backbones and side chains with high solubility and mechanical properties. The combination of these two features results in a high processability and a potential to orient the conjugated backbones in thin films and nanofibers. The thin films and nanofibers are usually composed of highly crystalline (high charge transport and amorphous parts. Orientation of conjugated polymer can result in enhanced charge transport or optical properties as it induces increased crystallinity or preferential orientation of the crystallites. After summarizing the potential strategies to exploit molecular order in conjugated polymer based optoelectronic devices, we will review some of the fabrication processes to induce molecular orientation. In particular, we will review the cases involving molecular and interfacial interactions, unidirectional deposition processes, electrospinning, and postdeposition mechanical treatments. The studies presented here clearly demonstrate that process-controlled molecular orientation of the conjugated polymer chains can result in high device performances (mobilities over 40 cm2·V−1·s−1 and solar cells with efficiencies over 10%. Furthermore, the peculiar interactions between molecularly oriented polymers and polarized light have the potential not only to generate low-cost and low energy consumption polarized light sources but also to fabricate innovative devices such as solar cell integrated LCDs or bipolarized LEDs.

  8. Conductivity based on selective etch for GaN devices and applications thereof

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  9. Terahertz optoelectronics in graphene

    Otsuji, Taiichi

    2016-01-01

    Graphene has attracted considerable attention due to its extraordinary carrier transport, optoelectronic, and plasmonic properties originated from its gapless and linear energy spectra enabling various functionalities with extremely high quantum efficiencies that could never be obtained in any existing materials. This paper reviews recent advances in graphene optoelectronics particularly focused on the physics and device functionalities in the terahertz (THz) electromagnetic spectral range. Optical response of graphene is characterized by its optical conductivity and nonequilibrium carrier energy relaxation dynamics, enabling amplification of THz radiation when it is optically or electrically pumped. Current-injection THz lasing has been realized very recently. Graphene plasmon polaritons can greatly enhance the THz light and graphene matter interaction, enabling giant enhancement in detector responsivity as well as amplifier/laser gain. Graphene-based van der Waals heterostructures could give more interesting and energy-efficient functionalities. (author)

  10. Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

    Bierwagen, Oliver

    2015-01-01

    The present review takes a semiconductor physics perspective to summarize the state-of-the art of In 2 O 3 in relation to applications. After discussing conventional and novel applications, the crystal structure, synthesis of single-crystalline material, band-structure and optical transparency are briefly introduced before focussing on the charge carrier transport properties. The issues of unintentional n-type conductivity and its likely causes, the surface electron accumulation, and the lack of p-type conductivity will be presented. Intentional doping will be demonstrated to control the electron concentration and resistivity over a wide range, but is also subject to compensation. The control of the surface accumulation in relation to Schottky and ohmic contacts will be demonstrated. In the context of scattering mechanisms, the electron mobility and its limits will be discussed. Finally, the Seebeck coefficient and its significance will be shown, and ferromagnetic doping of In 2 O 3 will be critically discussed. With this overview most if not all ingredients for the use of In 2 O 3 as semiconductor material in novel or improved conventional devices will be given. (invited review)

  11. Electrical properties of a new sulfur-containing polymer for optoelectronic application

    ElAkemi, ElMehdi; Jaballah, Nejmeddine; Ouada, Hafedh Ben; Majdoub, Mustapha

    2015-06-01

    An original polythiophene derivative was characterized to develop the optoelectronic properties of sulfur-containing π-conjugated polymer. The optical properties of the polymer were investigated by UV-visible absorption spectroscopy and atomic force microscopy. Investigations of the electrical characteristics of polymer diodes are reported. We present current-voltage characteristics and impedance spectroscopy measurements performed on partially sulfur-containing thin films in sandwich structure ITO/sulfur-containing polymer/Al. The conduction mechanisms in these layers are identified to be a space-charge-limited current. The AC electrical transport of the sulfur-containing polymer is studied as a function of frequency (100 Hz-10 MHz) and temperature in impedance spectroscopy analyses. We interpreted Cole-Cole plots in terms of the equivalent circuit model as a single parallel resistance and a capacitance network in series with a relatively small resistance. The evolution of the electrical parameters deduced from fitting of the experimental data is discussed.

  12. Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

    Khan, Jafar Iqbal

    2016-03-03

    Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials\\' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Synaptic electronics: materials, devices and applications.

    Kuzum, Duygu; Yu, Shimeng; Wong, H-S Philip

    2013-09-27

    In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented.

  14. Synaptic electronics: materials, devices and applications

    Kuzum, Duygu; Yu, Shimeng; Philip Wong, H-S

    2013-01-01

    In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented. (topical review)

  15. Neutron radiography devices and their own applications

    Farny, G.

    1975-04-01

    Three kinds of neutron radiography devices were developed by the Saclay Reactor Department: underwater facilities for active rig or loop examination; extracted beam without γ for industrial applications; a special unit for the examination of spent fuels several meters long from power plants. These devices are described and their applications and performances discussed [fr

  16. Context aware mobile application for mobile devices

    Masango, Mfundo

    2016-08-01

    Full Text Available Android smart devices have become an integral part of peoples lives, having evolved beyond the capability of just sending a text message or making a call. Currently, smart devices have applications that can restrict access to other applications...

  17. Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis

    Scopece, Daniele; Montalenti, Francesco; Bonera, Emiliano; Bollani, Monica; Chrastina, Daniel

    2014-01-01

    Germanium is known to become a direct band gap material when subject to a biaxial tensile strain of 2% (Vogl et al 1993 Phys. Scr. T49B 476) or uniaxial tensile strain of 4% (Aldaghri et al 2012 J. Appl. Phys. 111 053106). This makes it appealing for the integration of optoelectronics into current CMOS technology. It is known that the induced strain is highly dependent on the geometry and composition of the whole system (stressors and substrate), leaving a large number of variables to the experimenters willing to realize this transition and just a trial-and-error procedure. The study in this paper aims at reducing this freedom. We adopt a finite element approach to systematically study the elastic strain induced by different configurations of lithographically-created SiGe nanostructures on a Ge substrate, by focusing on their composition and geometries. We numerically investigate the role played by the Ge substrate by comparing the strain induced on a bulk or on a suspended membrane. These results and their interpretation can provide the community starting guidelines to choose the appropriate subset of parameters to achieve the desired strain. A case of a very large optically active area of a Ge membrane is reported. (paper)

  18. Secure smart embedded devices, platforms and applications

    Markantonakis, Konstantinos

    2013-01-01

    New generations of IT users are increasingly abstracted from the underlying devices and platforms that provide and safeguard their services. As a result they may have little awareness that they are critically dependent on the embedded security devices that are becoming pervasive in daily modern life. Secure Smart Embedded Devices, Platforms and Applications provides a broad overview of the many security and practical issues of embedded devices, tokens, and their operation systems, platforms and main applications. It also addresses a diverse range of industry/government initiatives and consider

  19. Displacement of teeth without and with bonded fixed orthodontic retainers: 3D analysis using triangular target frames and optoelectronic motion tracking device.

    Chakroun, Firas; Colombo, Vera; Lie Sam Foek, Dave; Gallo, Luigi Maria; Feilzer, Albert; Özcan, Mutlu

    2018-06-06

    The objective of this study was to evaluate the anterior tooth movement without and with bonded fixed orthodontic retainers under incremental loading conditions. Six extracted mandibular anterior human teeth were embedded in acrylic resin in True Form I Arch type and 3D reconstruction of Digital Volume Tomography (DVT) images (0.4 mm 3 voxels) were obtained. The anatomy of each tooth was segmented and digitally reconstructed using 3D visualization software for medical images (AMIRA, FEI SVG). The digital models of the teeth were repositioned to form an arch with constant curvature using a CAD software (Rhinoceros) and a base holder was designed fitting the shape of the roots. The clearance between the roots and their slot in the holder was kept constant at 0.3 mm to replicate the periodontal ligament thickness. The holder and the teeth were then manufactured by 3D printing (Objet Eden 260VS, Stratasys) using a resin material for dental applications (E = 2-3 GPa). The 3D-printed teeth models were then positioned in the holder and the root compartments were filled with silicone. The procedure was repeated to obtain three identical arch models. Each model was tested for tooth mobility by applying force increasing from 5 to 30 N with 5 N increments applied perpendicular on the lingual tooth surface on the incisal one third (crosshead speed: 0.1 mm/s). The teeth on each model were first tested without retainer (control) and subsequently with the bonded retainers (braided bonded retainer wire; Multi-strand 1 × 3 high performance wire, 0.022″ × 0.016″). Tooth displacement was measured in terms of complicance (F/Δ movement) (N/mm) using custom-built optoelectronic motion tracking device (OPTIS) (accuracy: 5 µm; sampling rate: 200 Hz). The position of the object was detected through three LEDs positioned in a fixed triangular shape on a metal support (Triangular Target Frame). The measurements were repeated for three times for each tooth

  20. Synthesis and characterization of 5,7-dimethyl-8-hydroxyquinoline and 2-(2-pyridyl)benzimidazole complexes of zinc(II) for optoelectronic application

    Singh, Kapoor; Kumar, Amit; Srivastava, Ritu; Kadyan, Partap S.; Kamalasanan, Modeeparampil N.; Singh, Ishwar

    2011-11-01

    Bis(5,7-dimethyl-8-hydroxyquinolinato)zinc(II) (Me 2q) 2Zn and 5,7-dimethyl-8-hydroxyquinolinato(2-(2-pyridyl)benzimidazole) zinc(II) Me 2q(pbi)Zn have been synthesized and characterized by various techniques. These metal complexes have high thermal stability (>300 °C) and high glass transition temperatures (>150 °C). The vacuum deposited films of these materials show good film forming property and are suitable for opto-electronic applications. Multilayered organic electroluminescent (EL) devices have been fabricated having structure ITO/α-NPD/zinc complex/BCP/Alq 3/LiF/Al, which produce emission with chromaticity having Commission Internationale d'Eclairage (CIE) coordinates x = 0.506 and y = 0.484 for (Me 2q) 2Zn; x = 0.47 and y = 0.52 for (Me 2q)(pbi)Zn complex. The electroluminescence spectra show peak emission centered at 572 and 561 nm respectively for these materials.

  1. Slot-Die-Coated V2O5 as Hole Transport Layer for Flexible Organic Solar Cells and Optoelectronic Devices

    Beliatis, Michail; Helgesen, Martin; Garcia Valverde, Rafael

    2016-01-01

    Vanadium pentoxide has been proposed as a good alternative hole transport layer for improving device lifetime of organic photovoltaics. The article presents a study on the optimization of slot-die-coated vanadium oxide films produced with a roll coating machine with the aim of achieving scalable ...

  2. Solid-state devices and applications

    Lewis, Rhys

    1971-01-01

    Solid-State Devices and Applications is an introduction to the solid-state theory and its devices and applications. The book also presents a summary of all major solid-state devices available, their theory, manufacture, and main applications. The text is divided into three sections. The first part deals with the semiconductor theory and discusses the fundamentals of semiconductors; the kinds of diodes and techniques in their manufacture; the types and modes of operation of bipolar transistors; and the basic principles of unipolar transistors and their difference with bipolar transistors. The s

  3. Vertical MoSe2-MoO x p-n heterojunction and its application in optoelectronics

    Chen, Xiaoshuang; Liu, Guangbo; Hu, Yunxia; Cao, Wenwu; Hu, PingAn; Hu, Wenping

    2018-01-01

    The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ˜8 μm. Vertical MoSe2-MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2-MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W-1, 0.85 × 108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm-2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.

  4. Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

    Amin, B.; Ahmad, Iftikhar; Maqbool, M.; Goumri-Said, S.; Ahmad, R.

    2011-01-01

    A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

  5. Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

    Amin, B.

    2011-01-19

    A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

  6. Optical absorption and electrical properties of MPc (M =Fe, Cu, Zn)-TCNQ interfaces for optoelectronic applications

    Sánchez Vergara, M. E.; Medrano Gallardo, D.; Vera Estrada, I. L.; Jiménez Sandoval, O.

    2018-04-01

    all three devices manufactured, MMFe, MMCu and MMZn, are of potential use in optoelectronics. The doping effect of TCNQ favors the electronic transport, most likely due to the formation of conduction channels caused by the anisotropy induced by the dopant.

  7. Application of magnetic devices in otiatria

    Kuznetsov, Anatoly A. E-mail: akuz@sky.chph.ras.ru; Yunin, Alexander M.; Savichev, Alexander A.; Kuznetsov, Oleg A. E-mail: oleg@louisiana.edu; Dmitriev, Nikolai S.; Palchun, Victor T

    2001-07-01

    Several implantable prostheses and other devices based on permanent magnets and using magneto-mechanical forces for their operation were developed for treating middle ear diseases and hearing rehabilitation. Methods of surgical application of the devices were developed and in clinical trials more than 85% of 127 patients with different degrees of middle ear system degradation have shown stable improvement.

  8. Application of magnetic devices in otiatria

    Kuznetsov, Anatoly A.; Yunin, Alexander M.; Savichev, Alexander A.; Kuznetsov, Oleg A.; Dmitriev, Nikolai S.; Palchun, Victor T.

    2001-01-01

    Several implantable prostheses and other devices based on permanent magnets and using magneto-mechanical forces for their operation were developed for treating middle ear diseases and hearing rehabilitation. Methods of surgical application of the devices were developed and in clinical trials more than 85% of 127 patients with different degrees of middle ear system degradation have shown stable improvement

  9. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    Tam, S.W.

    1997-01-01

    Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig

  10. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    Tam, Shiu-Wing

    1997-01-01

    An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

  11. Process of optical excitation and relaxation of color center in synthetic diamond and its application to optoelectronics

    Nishida, Yoshio

    1989-01-01

    Irradiation of high-pressure synthesized diamond is carried out by using a nuclear reactor or a linac. Then, the effect of annealing on the color centers is observed. A study is made to identify different color centers and to provide techniques to control their introduction. Investigations cover the relation of color center formation with annealing temperature, dependence of color center formation on radiation dose, migration of H3 center and hydrogen, and applicability of five different color centers to optoelectronics. Next, a study is made of the formation and relaxation of the nitrogen vacancy (NV) center in a metastable excited state produced by optical excitation. An optical gain is essential to provide laser. Optical amplification is measured at the vibronic emission band of the NV center. An increase in absorption is detected, indicating that the NV center will not provide laser. In the optical excitation-relaxation process, the relaxation proceeds via a metastable state. Finally, hole burning of ZPL of the NV center is observed in the temperature range from 20K to 80K, and some of its features are described. (N.K.)

  12. Chemical synthesis and characterization of CdSe thin films deposited by SILAR technique for optoelectronic applications

    K.B. Chaudhari

    2016-12-01

    Full Text Available CdSe thin films were deposited on the glass substrate by successive ionic layer adsorption and reaction (SILAR method. Different sets of the film are prepared by changing the number of immersion cycles as 30, 40, 50 and 60. Further the effect of a number of immersion cycles on the characteristic structural, morphological, optical and electrical properties of the films are studied. The XRD studies revealed that the deposited films showed hexagonal structure with most prominent reflection along (1 0 1 plane. Moreover, the peak intensity of (1 0 1 plane is found to be increased as the number of immersion cycles is increased. All the thin films look relatively smooth and homogeneous covering the entire surface area in FESEM image. Optical properties of the CdSe thin films for a different number of immersion cycles were studied, which indicates that the absorbance increases with the increase in the immersion cycles. Furthermore, the optical band-gap in conjunction with the electrical resistivity was found to get decreased with increase in the immersion cycles. A good correlation between the number of immersion cycles and the physical properties indicates a simple method to manipulate the CdSe material properties for optoelectronic applications.

  13. Heterostructures and quantum devices

    Einspruch, Norman G

    1994-01-01

    Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en

  14. Microoxygraph Device for Biosensoristic Applications

    A. Aloisi

    2016-01-01

    Full Text Available Oxygen consumption rate (OCR is a significant parameter helpful to determine in vitro respiratory efficiency of living cells. Oxygen is an excellent oxidant and its electrocatalytic reduction on a noble metal allows accurately detecting it. By means of microfabrication technologies, handy, low-cost, and disposable chip can be attained, minimizing working volumes and improving sensitivity and response time. In this respect, here is presented a microoxygraph device (MOD, based on Clark’s electrode principle, displaying many advantageous features in comparison to other systems. This lab-on-chip platform is composed of a three-microelectrode detector equipped with a microgrooved electrochemical cell, sealed with a polymeric reaction chamber. Au working/counter electrodes and Ag/AgCl reference electrode were fabricated on a glass slide. A microchannel was realized by photoresist lift-off technique and a polydimethylsiloxane (PDMS nanoporous film was integrated as oxygen permeable membrane (OPM between the probe and the microreaction chamber. Electrochemical measurements showed good reproducibility and average response time, assessed by periodic injection and suction of a reducing agent. OCR measurements on 3T3 cells, subjected, in real time, to chemical stress on the respiratory chain, were able to show that this chip allows performing consistent metabolic analysis.

  15. Optoelectronic characterization of Eu3+ doped MLa2O4 (M = Sr, Ca, Mg nanophosphors for display devices

    Devender Singh

    2015-12-01

    Full Text Available Eu3+ doped MLa2O4 (M = Mg, Ca, Sr nanophosphors were synthesized by a rapid facile gel combustion route. Luminescence properties of these prepared nanophosphors were analyzed by their excitation and emission spectra. The excitation spectrum consisted of some peaks in the 350–410 nm range due to the f–f transitions. The emission spectra of prepared nanophosphors had transitions of Eu3+ ions i.e. 5D0 → 7F0 (580 nm, 5D0 → 7F1 (594–596 nm, 5D0 → 7F2 (614–618, 628–629 nm, and 5D0 → 7F3 (650–651 nm. The main emission peak was observed at 614–618 nm of 5D0→7F2 transitions of Eu3+ ions. The enhancement in optical properties was observed when materials were reheated at higher temperatures. The nanostructural morphology was confirmed with scanning as well as transmission electron microscopy. The prepared materials were having size in the range of 10–50 nm. X-ray powder diffraction (XRD technique was used to determine the crystal structure and phase of the prepared phosphor materials. XRD measurements revealed that the crystallinity of MLa2O4 materials increased with increasing the sintering temperature. The prepared materials had bright red emitting optical properties that could be suitably applied in various display devices.

  16. An introduction to optoelectronic sensors

    Tajani, Antonella; Cutolo, Antonello

    2009-01-01

    This invaluable book offers a comprehensive overview of the technologies and applications of optoelectronic sensors. Based on the R&D experience of more than 70 engineers and scientists, highly representative of the Italian academic and industrial community in this area, this book provides a broad and accurate description of the state-of-the-art optoelectronic technologies for sensing. The most innovative approaches, such as the use of photonic crystals, squeezed states of light and microresonators for sensing, are considered. Application areas range from environment to medicine and healthcare

  17. Dynamic Analysis of Mobile Device Applications

    Corey Thuen

    2013-01-01

    The On-Device Dynamic Analysis of Mobile Applications (ODAMA) project was started in an effort to protect mobile devices used in Industrial Control Systems (ICS) from cyber attack. Because mobile devices hide as much of the “computer” as possible, the user’s ability to assess the software running on their system is limited. The research team chose Google’s Android platform for this initial research because it is open source and it would give us freedom in our approach, including the ability to modify the mobile device’s operating system itself. The research team concluded that a Privileged Application was the right approach, and the result was ODAMA. This project is an important piece of the work to secure the expanding use of mobile devices with our nation’s critical infrastructure.

  18. Fusing porphyrins with polycyclic aromatic hydrocarbons and heterocycles for optoelectronic applications

    Thompson, Mark E.; Diev, Viacheslav; Hanson, Kenneth; Forrest, Stephen R.

    2015-08-18

    A compound that can be used as a donor material in organic photovoltaic devices comprising a non-activated porphyrin fused with one or more non-activated polycyclic aromatic rings or one or more non-activated heterocyclic rings can be obtained by a thermal fusion process. The compounds can include structures of Formula I: ##STR00001## By heating the reaction mixture of non-activated porphyrins with non-activated polycyclic aromatic rings or heterocyclic rings to a fusion temperature and holding for a predetermined time, fusion of one or more polycyclic rings or heterocyclic rings to the non-activated porphyrin core in meso,.beta. fashion is achieved resulting in hybrid structures containing a distorted porphyrin ring with annulated aromatic rings. The porphyrin core can be olygoporphyrins.

  19. Nitride semiconductor devices fundamentals and applications

    Morkoç, Hadis

    2013-01-01

    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  20. Integrated optoelectronic oscillator.

    Tang, Jian; Hao, Tengfei; Li, Wei; Domenech, David; Baños, Rocio; Muñoz, Pascual; Zhu, Ninghua; Capmany, José; Li, Ming

    2018-04-30

    With the rapid development of the modern communication systems, radar and wireless services, microwave signal with high-frequency, high-spectral-purity and frequency tunability as well as microwave generator with light weight, compact size, power-efficient and low cost are increasingly demanded. Integrated microwave photonics (IMWP) is regarded as a prospective way to meet these demands by hybridizing the microwave circuits and the photonics circuits on chip. In this article, we propose and experimentally demonstrate an integrated optoelectronic oscillator (IOEO). All of the devices needed in the optoelectronic oscillation loop circuit are monolithically integrated on chip within size of 5×6cm 2 . By tuning the injection current to 44 mA, the output frequency of the proposed IOEO is located at 7.30 GHz with phase noise value of -91 dBc/Hz@1MHz. When the injection current is increased to 65 mA, the output frequency can be changed to 8.87 GHz with phase noise value of -92 dBc/Hz@1MHz. Both of the oscillation frequency can be slightly tuned within 20 MHz around the center oscillation frequency by tuning the injection current. The method about improving the performance of IOEO is carefully discussed at the end of in this article.

  1. Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

    Jarad, Amer N.; Ibrahim, Kamarulazizi; Ahmed, Nasser M.

    2016-07-01

    In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10-5 (Ω.cm)-1, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

  2. Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

    Chmelka, Bradley F

    2007-01-01

    ...) nanocomposite films have been measured and controlled to modify, enhance, and understand their optical and/or semiconducting properties over a hierarchy of dimensions, from molecular to macroscopic...

  3. Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

    Jarad, Amer N., E-mail: amer78malay@yahoo.com.my; Ibrahim, Kamarulazizi, E-mail: kamarul@usm.my; Ahmed, Nasser M., E-mail: nas-tiji@yahoo.com [Nano-optoelectronic Research and Technology Laboratory School of physics, University of Sains Malaysia, 11800 Pulau Pinang (Malaysia)

    2016-07-06

    In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10{sup −5} (Ω.cm){sup −1}, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

  4. Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

    Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

    2015-01-01

    Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

  5. New core-substituted with electron-donating group 1,8-naphthalimides towards optoelectronic applications

    Schab-Balcerzak, Ewa, E-mail: eschab-balcerzak@cmpw-pan.edu.pl [Centre of Polymer and Carbon Materials, Polish Academy of Sciences, 34 M. Curie-Sklodowska Street, 41-819 Zabrze (Poland); Institute of Chemistry, University of Silesian, 9 Szkolna Street, 40-006 Katowice (Poland); Siwy, Mariola [Centre of Polymer and Carbon Materials, Polish Academy of Sciences, 34 M. Curie-Sklodowska Street, 41-819 Zabrze (Poland); Filapek, Michal; Kula, Slawomir; Malecki, Grzegorz [Institute of Chemistry, University of Silesian, 9 Szkolna Street, 40-006 Katowice (Poland); Laba, Katarzyna; Lapkowski, Mieczyslaw [Centre of Polymer and Carbon Materials, Polish Academy of Sciences, 34 M. Curie-Sklodowska Street, 41-819 Zabrze (Poland); Faculty of Chemistry, Silesian University of Technology, 9 Strzody Steet, 44-100 Gliwice (Poland); Janeczek, Henryk; Domanski, Marian [Centre of Polymer and Carbon Materials, Polish Academy of Sciences, 34 M. Curie-Sklodowska Street, 41-819 Zabrze (Poland)

    2015-10-15

    New 1,8-naphthalimides with thiophene or bithiophene structure attached by an imine linkage to naphthalene core were synthesized. The structures of obtained compounds were characterized by FTIR, {sup 1}H NMR spectroscopy, elemental analysis and for elected compounds by HRMS (ESI) spectrometry. Thermal, optical and electrochemical properties of obtained 1,8-naphthalimides were investigated. Most of them exhibited glass-forming properties with glass transition temperatures in the range of 73–278 °C. Optical properties of the prepared compounds were examined by UV–vis and photoluminescence (PL) measurements. They emitted light in chloroform solution with emission maximum at ca. 500 nm with the highest quantum yield of fluorescence around 0.46 and green one in NMP solution. In blend with PMMA blue emission was observed with the highest quantum yield of fluorescence around 0.24. All compounds are electrochemically active, and undergo reversible reduction and irreversible or quasi-reversible oxidation process as was found in cyclic and differential pulse voltammetry (CV and DPV) studies. They showed electrochemical band gaps in the range 2.28–2.68 eV. Additionally, the electronic properties, that is, orbital energies and resulting energy gap were calculated by density functional theory (DFT). Additionally, selected compounds were preliminary tested as electroluminescence materials in devices with structure ITO/PVK:NI blend/Al. - Highlights: • We obtained new core substituted 1,8-naphthalimides. • They emitted light in CHCl{sub 3} with the largest PL quantum yield measure for these compounds of 0.46. • They emitted blue light in a blend with PMMA with the largest Φ{sub f} 0.24 measured for these compounds. • Their electrochemical energy band gap was in the range of 2.28–2.68 eV. • Preliminary investigations showed that green electroluminescence was observed.

  6. Light box for investigation of characteristics of optoelectronics detectors

    Szreder, Agnieszka; Mazikowski, Adam

    2017-09-01

    In this paper, a light box for investigation of characteristics of optoelectronic detectors is described. The light box consists of an illumination device, an optical power sensor and a mechanical enclosure. The illumination device is based on four types of high-power light emitting diodes (LED): white light, red, green and blue. The illumination level can be varied for each LED independently by the driver and is measured by optical power sensor. The mechanical enclosure provides stable mounting points for the illumination device, sensor and the examined detector and protects the system from external light, which would otherwise strongly influence the measurement results. Uniformity of illumination distribution provided by the light box for all colors is good, making the measurement results less dependent on the position of the examined detector. The response of optoelectronic detectors can be investigated using the developed light box for each LED separately or for any combination of up to four LED types. As the red, green and blue LEDs are rather narrow bandwidth sources, spectral response of different detectors can be examined for these wavelength ranges. The described light box can be used for different applications. Its primary use is in a student laboratory setup for investigation of characteristics of optoelectronic detectors. Moreover, it can also be used in various colorimetric or photographic applications. Finally, it will be used as a part of demonstrations from the fields of vision and color, performed during science fairs and outreach activities increasing awareness of optics and photonics.

  7. Analysis of optical and electronic properties of MoS2 for optoelectronics and FET applications

    Ullah, Muhammad S.; Yousuf, Abdul Hamid Bin; Es-Sakhi, Azzedin D.; Chowdhury, Masud H.

    2018-04-01

    Molybdenum disulfide (MoS2) is considered as a promising alternative to conventional semiconductor materials that used in the IC industry because of its novel properties. In this paper, we explore the optical and electronic properties of MoS2 for photodetector and transistors applications. This simulation is done using `DFT materials properties simulator'. Our findings show that mono- and multi-layer MoS2 is suitable for conventional and tunnel FET applications due to direct and indirect band-gap respectively. The bulk MoS2 crystal, which are composed of stacked layers have indirect bandgap and mono-layer MoS2 crystal form direct bandgap at the K-point of Brillouin zone. Indirect bandgap of bulk MoS2 crystal implies that phonons need to be involved in band-to-band tunneling (BTBT) process. Degenerately doped semiconductor, which is basically spinning the Fermi level, changing the DOS profile, and thinning the indirect bandgap that allow tunneling from valence band to conduction band. The optical properties of MoS2 is explored in terms of Absorption coefficient, extinction coefficient and refractive index. Our results shows that a MoS2 based photodetector can be fabricate to detect light in the visible range (below 500nm). It is also observed that the MoS2 is most sensitive for the light of wavelength 450nm.

  8. Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications

    Nie Tianxiao; Chen Zhigang; Wu Yueqin; Lin Jianhui; Zhang Jiuzhan; Fan Yongliang; Yang Xinju; Jiang Zuimin; Zou Jin

    2011-01-01

    Research highlights: → Metallic Ge has been demonstrated as an effective catalyst for the growth of SiO x nanowires on Si substrates. → Such a catalyst may avoid catalyst contamination caused by their unconsciousness left in the nanowires. → Two broad peaks centered at 410 nm and 570 nm were observed in photoluminescence spectrum, indicating that such SiO x nanowires have the potential applications in white light-emitting diodes, full-colour display, full-colour indicator and light sources. - Abstract: Amorphous SiO x nanowires, with diameters of ∼20 nm and lengths of tens of μm, were grown from self-organized GeSi quantum dots or GeSi alloy epilayers on Si substrates. The morphologies and yield of these amorphous nanowires depend strongly upon the synthesis temperature. Comparative experiments indicate that the present SiO x nanowires are induced by metallic Ge as catalysts via the solid liquid solid growth mechanism. Two broad peaks centered at 410 nm and 570 nm were observed in photoluminescence spectrum, indicating that such SiO x nanowires have the potential applications in white light-emitting diodes, full-colour display, full-colour indicator and light sources.

  9. Optoelectronic inventory system for special nuclear material

    Sieradzki, F.H.

    1994-01-01

    In support of the Department of Energy's Dismantlement Program, the Optoelectronics Characterization and Sensor Development Department 2231 at Sandia National Laboratories/New Mexico has developed an in situ nonintrusive Optoelectronic Inventory System (OIS) that has the potential for application wherever periodic inventory of selected material is desired. Using a network of fiber-optic links, the OIS retrieves and stores inventory signatures from data storage devices (which are permanently attached to material storage containers) while inherently providing electromagnetic pulse immunity and electrical noise isolation. Photovoltaic cells (located within the storage facility) convert laser diode optic power from a laser driver to electrical energy. When powered and triggered, the data storage devices sequentially output their digital inventory signatures through light-emitting diode/photo diode data links for retrieval and storage in a mobile data acquisition system. An item's exact location is determined through fiber-optic network and software design. The OIS provides an on-demand method for obtaining acceptable inventory reports while eliminating the need for human presence inside the material storage facility. By using modularization and prefabricated construction with mature technologies and components, an OIS installation with virtually unlimited capacity can be tailored to the customer's requirements

  10. Optoelectronic line transmission an introduction to fibre optics

    Tricker, Raymond L

    2013-01-01

    Optoelectronic Line Transmission: An Introduction to Fibre Optics presents a basic introduction as well as a background reference manual on fiber optic transmission. The book discusses the basic principles of optical line transmission; the advantages and disadvantages of optical fibers and optoelectronic signalling; the practical applications of optoelectronics; and the future of optoelectronics. The text also describes the theories of optical line transmission; fibers and cables for optical transmission; transmitters including light-emitting diodes and lasers; and receivers including photodi

  11. Medical applications of superconducting quantum interference devices

    Uehara, Gen

    2011-01-01

    SQUIDs (Superconducting Quantum Interference Devices) are applied to clinical areas and basic medical science fields because of their potential for measuring a minute magnetic signal from the human body. Magnetoencephalography, one of their applications, is used for the functional mapping of the brain cortex before surgery and the localization of focus of epilepsy. Recently, their applications to the early-stage detection of dementia and the localization of brain ischemia are suggested. Another application of SQUIDs is magnetospinography, which detects the conduction block in spinal cord signal propagation. (author)

  12. Optoelectronic vision

    Ren, Chunye; Parel, Jean-Marie A.

    1993-06-01

    Scientists have searched every discipline to find effective methods of treating blindness, such as using aids based on conversion of the optical image, to auditory or tactile stimuli. However, the limited performance of such equipment and difficulties in training patients have seriously hampered practical applications. A great edification has been given by the discovery of Foerster (1929) and Krause & Schum (1931), who found that the electrical stimulation of the visual cortex evokes the perception of a small spot of light called `phosphene' in both blind and sighted subjects. According to this principle, it is possible to invite artificial vision by using stimulation with electrodes placed on the vision neural system, thereby developing a prosthesis for the blind that might be of value in reading and mobility. In fact, a number of investigators have already exploited this phenomena to produce a functional visual prosthesis, bringing about great advances in this area.

  13. InP/ZnS-graphene oxide and reduced graphene oxide nanocomposites as fascinating materials for potential optoelectronic applications

    Samal, Monica; Mohapatra, Priyaranjan; Subbiah, Ramesh; Lee, Chang-Lyoul; Anass, Benayad; Kim, Jang Ah; Kim, Taesung; Yi, Dong Kee

    2013-09-01

    superior electrical conductance as a channel material compared to the GOQD due to the close proximity of the QDs in the RGOQD to the graphene surface. The transfer characteristics, memory properties, and on/off ratios of the devices are determined. A mechanism has been proposed with reference to the Fermi energies of the composites estimated from the ultraviolet photoelectron spectroscopy (UPS) studies.Our recent studies on metal-organic nanohybrids based on alkylated graphene oxide (GO), reduced alkylated graphene oxide (RGO) and InP/ZnS core/shell quantum dots (QDs) are presented. The GO alkylated by octadecylamine (ODA) and the QD bearing a dodecane thiol (DDT) ligand are soluble in toluene. The nanocomposite alkylated-GO-QD (GOQD) is readily formed from the solution mixture. Treatment of the GOQD composite with hydrazine affords a reduced-alkylated-GO-QD (RGOQD) composite. The structure, morphology, photophysical and electrical properties of GOQDs and RGOQDs are studied. The micro-FTIR and Raman studies demonstrate evidence of the QD interaction with GO and RGO through facile intercalation of the alkyl chains. The field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM) images of the GOQD composite show heaps of large QD aggregates piled underneath the GO sheet. Upon reduction to RGOQDs, the QDs become evenly distributed on the graphene bed and the size of the clusters significantly decreases. This also facilitates closer proximity of the QDs to the graphene domains by altering the optoelectronic properties of the RGOQDs. The X-ray photoelectron spectroscopy (XPS) results confirm QDs being retained in the composites, though a small elemental composition change takes place. The XPS and the fluorescence spectra show the presence of an In(Zn)P alloy while the X-ray diffraction (XRD) results show characteristics of the tetragonal indium. The photoluminescence (PL) quenching of QDs in GOQD and RGOQD films determined by

  14. Applied superconductivity handbook on devices and applications

    2015-01-01

    This wide-ranging presentation of applied superconductivity, from fundamentals and materials right up to the latest applications, is an essential reference for physicists and engineers in academic research as well as in the field. Readers looking for a systematic overview on superconducting materials will expand their knowledge and understanding of both low and high Tc superconductors, including organic and magnetic materials. Technology, preparation and characterization are covered for several geometries, but the main benefit of this work lies in its broad coverage of significant applications in power engineering or passive devices, such as filter and antenna or magnetic shields. The reader will also find information on superconducting magnets for diverse applications in mechanical engineering, particle physics, fusion research, medicine and biomagnetism, as well as materials processing. SQUIDS and their usage in medicine or geophysics are thoroughly covered as are applications in quantum metrology, and, las...

  15. Physics and applications of electrochromic devices

    Pawlicka, Agnieszka; Avellaneda, Cesar O.

    2003-07-01

    Solid state electrochromic devices (ECD) are of considerable technological and commercial interest because of their controllable transmission, absorption and/or reflectance. For instance, a major application of these devices is in smart windows that can regulate the solar gains of buildings and also in glare attenuation in automobile rear view mirrors. Other applications include solar cells, small and large area flat panel displays, satellite temperature control, food monitoring, and document authentication. A typical electrochromic device has a five-layer structure: GS/TC/EC/IC/IS/TC/GS, where GS is a glass substrate, TC is a transparent conductor, generally ITO (indium tin oxide) or FTO (fluorine tin oxide), EC is an electrochromic coating, IC is an ion conductor (solid or liquid electrolyte) and IS is an ion storage coating. Generally, the EC and IS layers are deposited separately on the TC coatings and then jointed with the IC and sealed. The EC and IS are thin films that can be deposited by sputtering, CVD, sol-gel precursors, etc. There are different kinds of organic, inorganic and organic-inorganic films that can be used to make electrochromic devices. Thin electrochromic films can be: WO3, Nb2O5, Nb2O5:Li+ or Nb2O5-TiO2 coatings, ions storage films: CeO2-TiO2, CeO2-ZrO2 or CeO2-TiO2-ZrO2 and electrolytes like Organically Modified Electrolytes (Ormolytes) or polymeric films also based on natural polymers like starch or cellulose. These last are very interesting due to their high ionic conductivity, high transparency and good mechanical properties. This paper describes construction and properties of different thin oxide and polymeric films and also shows the optical response of an all sol-gel electrochromic device with WO3/Ormolyte/CeO2-TiO2 configuration.

  16. Ultrafast Phase Comparator for Phase-Locked Loop-Based Optoelectronic Clock Recovery Systems

    Gomez-Agis, F.; Oxenløwe, Leif Katsuo; Kurimura, S.

    2009-01-01

    The authors report on a novel application of a chi((2)) nonlinear optical device as an ultrafast phase comparator, an essential element that allows an optoelectronic phase-locked loop to perform clock recovery of ultrahigh-speed optical time-division multiplexed (OTDM) signals. Particular interest...... is devoted to a quasi-phase-matching adhered-ridge-waveguide periodically poled lithium niobate (PPLN) device, which shows a sufficient high temporal resolution to resolve a 640 Gbits OTDM signal....

  17. Chalcogenide glasses for device application modified by high-energy irradiation

    Kavetskyy, T.; Shpotyuk, O.

    2006-01-01

    Full text: Chalcogenide glasses (ChG) or chemical compounds of chalcogen atoms (S, Se or Te, but not O) with some elements from IV-th and V-th groups of the Periodic Table (typically As, Ge, Sb, Bi, etc. ) obtained by melt quenching, are a perspective for application in modern optoelectronics, photonics, telecommunications, acoustic-optics, xerography, lithography, etc. This uniqueness is due to extremely high sensitivity of ChG to external influences, associated, presumably, with high steric flexibility proper to glassy-like network with low average atomic coordination (chalcogen atoms are typically two-fold coordinated in a glassy-like network), relatively large internal free volume and specific lp-character of electronic states localized at a valence-band top. However, at present, the further possibilities for conventional chemical/technological methods to prepare ChG are fully exhausted. One of the steps to resolve this problem is post-technological modification of ChG using possibilities of high-energy irradiation. This work is focused on new advanced radiation-modified ChG for device application in optoelectronics. The attractive practical use of these non-crystalline materials is tightly connected with radiation-induced defect formation processes. For the first time, we consider the possibilities of Raman scattering along with X-ray diffraction and positron annihilation lifetime spectroscopy to characterize microstructural mechanisms of radiation-induced effects in ChG. (authors)

  18. Multifunctional magnetoelectric materials for device applications

    Ortega, N; Katiyar, Ram S; Kumar, Ashok; Scott, J F

    2015-01-01

    Over the past decade magnetoelectric (ME) mutiferroic (MF) materials and their devices are one of the highest priority research topics that has been investigated by the scientific ferroics community to develop the next generation of novel multifunctional materials. These systems show the simultaneous existence of two or more ferroic orders, and cross-coupling between them, such as magnetic spin, polarisation, ferroelastic ordering, and ferrotoroidicity. Based on the type of ordering and coupling, they have drawn increasing interest for a variety of device applications, such as magnetic field sensors, nonvolatile memory elements, ferroelectric photovoltaics, nano-electronics etc. Since single-phase materials exist rarely in nature with strong cross-coupling properties, intensive research activity is being pursued towards the discovery of new single-phase multiferroic materials and the design of new engineered materials with strong magneto-electric (ME) coupling. This review article summarises the development of different kinds of multiferroic material: single-phase and composite ceramic, laminated composite and nanostructured thin films. Thin-film nanostructures have higher magnitude direct ME coupling values and clear evidence of indirect ME coupling compared with bulk materials. Promising ME coupling coefficients have been reported in laminated composite materials in which the signal to noise ratio is good for device fabrication. We describe the possible applications of these materials. (topical review)

  19. Recent trend in graphene for optoelectronics

    Chen, Yu-Bin; Liu, John S.; Lin Pang

    2013-01-01

    This study analyzes the scientific knowledge diffusion paths of graphene for optoelectronics (GFO), where graphene offers wide applications due to its thinness, high conductivity, excellent transparency, chemical stability, robustness, and flexibility. Our investigation is based on the main path analysis which establishes the citation links among the literature data in order to trace the significant sequence of knowledge development in this emerging field. We identify the main development paths of GFO up to the year 2012, along which a series of influential papers in this field are identified. The main path graph shows that knowledge diffusion occurs in key subareas, including reduced graphene oxide, chemical vapor deposition, and exfoliation techniques, which are developed for the preparation and applications of GFO. The applications cover solar cells, laser devices, sensing devices, and LCD. In addition, the main theme of GFO research evolves in sequence from small-graphene-sample preparation, to large-scale film growth, and onto prototype device fabrication. This evolution reflects a strong industrial demand for a new transparent–conductive film technology.

  20. Organic nanomaterials: synthesis, characterization, and device applications

    Torres, Tomas

    2013-01-01

    Recent developments in nanoscience and nanotechnology have given rise to a new generation of functional organic nanomaterials with controlled morphology and well-defined properties, which enable a broad range of useful applications. This book explores some of the most important of these organic nanomaterials, describing how they are synthesized and characterized. Moreover, the book explains how researchers have incorporated organic nanomaterials into devices for real-world applications.Featuring contributions from an international team of leading nanoscientists, Organic Nanomaterials is divided into five parts:Part One introduces the fundamentals of nanomaterials and self-assembled nanostructuresPart Two examines carbon nanostructures—from fullerenes to carbon nanotubes to graphene—reporting on properties, theoretical studies, and applicationsPart Three investigates key aspects of some inorganic materials, self-assembled monolayers,...

  1. Electro-optical properties of poly[di(2-thiophenyl)carborane] and its opto-electronic application

    Cansu-Ergun, Emine Gul; Cihaner, Atilla

    2013-01-01

    Electrochemical and optical properties of a hybrid carborane based polymer called poly(di(2-thiophenyl)carborane) (P1) obtained electrochemically were reported as well as its electrochromic device application. Thiophene donor units and m-carborane acceptor unit were combined under the same umbrella via donor–acceptor–donor approach to obtain di(2-thiophenyl)carborane (1). Contrary to the literature, extreme conditions like highly dried solvent or inert atmosphere were not used for polymerization and characterization. Polymer P1 has an ambipolar character since it exhibited a reversible oxidation peak at a half wave potential (E 1/2 ) of 1.08 V and a quasi reversible reduction peak at E 1/2 = −1.82 V vs. Ag/AgCl. The polymer film has an optical band gap of 1.95 eV with a maximum absorption band centered at 488 nm. Also, it exhibited multicolor electrochromic behavior between its reduced and oxidized states changing from dark orange to light blue. Furthermore, the electrochromic device prepared based on P1 film was stable and robust. - Highlights: • Electrochromic properties of a carborane based conjugated polymer were reported. • The polymer exhibited an ambipolar character and multicolor behaviors. • It is the first electrochromic device based on a carborane unit

  2. Electroactive and Optoelectronically Active Graphene Nanofilms

    Chi, Qijin

    As an atomic-scale-thick two-dimensional material, graphene has emerged as one of the most miracle materials and has generated intensive interest in physics, chemistry and even biology in the last decade [1, 2]. Nanoscale engineering and functionalization of graphene is a crucial step for many...... applications ranging from catalysis, electronic devices, sensors to advanced energy conversion and storage [3]. This talk highlights our recent studies on electroactive and optoelectronically active graphene ultrathin films for chemical sensors and energy technology. The presentation includes a general theme...... for functionalization of graphene nanosheets, followed by showing several case studies. Our systems cover redox-active nanoparticles, electroactive supramolecular ensembles and redox enzymes which are integrated with graphene nanosheets as building blocks for the construction of functional thin films or graphene papers....

  3. Oxide materials for spintronic device applications

    Prestgard, Megan Campbell

    device-based applications. This dissertation presents experimental results on the use of oxides for fulfilling the three spintronic device requirements. In the case of spin injection, the study of dilute magnetic dielectrics (DMDs) shows the importance of doping on the magnetic properties of the resulting tunnel barriers. The study of spin transport in ZnO has shown that, even at room temperature, the spin diffusion length is relatively long, on the order of 100 nm. These studies have also probed the spin relaxation mechanics in ZnO and have shown that Dyakonov-Perel spin relaxation, operating according to Fermi-Dirac statistics, is the dominant spin relaxation mechanism in zinc oxide. Finally, spin detection in ZnO has shown that, similar to other semiconductors, by modifying the resistivity of the ZnO thin films, the spin Hall angle (SHA) can be enhanced to nearly that of metals. This is possible by enhancing extrinsic SOC due to skew-scattering from impurities as well as phonons. In addition, thermal spin injection has also been detected using ZnO, which results support the independently measured inverse spin-Hall effect studies. The work represented herein illustrates that oxide materials have the potential to enhance spintronic device potential in all processes pertinent to spintronic applications.

  4. Emerging digital micromirror device (DMD) applications

    Dudley, Dana; Duncan, Walter M.; Slaughter, John

    2003-01-01

    For the past six years, Digital Light Processing technology from Texas Instruments has made significant inroads in the projection display market. With products enabling the world"s smallest data and video projectors, HDTVs, and digital cinema, DLP technology is extremely powerful and flexible. At the heart of these display solutions is Texas Instruments Digital Micromirror Device (DMD), a semiconductor-based "light switch" array of thousands of individually addressable, tiltable, mirror-pixels. With success of the DMD as a spatial light modulator for projector applications, dozens of new applications are now being enabled by general-use DMD products that are recently available to developers. The same light switching speed and "on-off" (contrast) ratio that have resulted in superior projector performance, along with the capability of operation outside the visible spectrum, make the DMD very attractive for many applications, including volumetric display, holographic data storage, lithography, scientific instrumentation, and medical imaging. This paper presents an overview of past and future DMD performance in the context of new DMD applications, cites several examples of emerging products, and describes the DMD components and tools now available to developers.

  5. Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

    Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

    2014-11-01

    While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

  6. Optoelectronics of Molecules and Polymers

    Moliton, André

    2006-01-01

    Optoelectronic devices are being developed at an extraordinary rate. Organic light emitting diodes, photovoltaic devices and electro-optical modulators are pivotal to the future of displays, photosensors and solar cells, and communication technologies. This book details the theories underlying the relevant mechanisms in organic materials and covers, at a basic level, how the organic components are made. The first part of this book introduces the fundamental theories used to detail ordered solids and localised energy levels. The methods used to determine energy levels in perfectly ordered molecular and macromolecular systems are discussed, making sure that the effects of quasi-particles are not missed. The function of excitons and their transfer between two molecules are studied, and the problems associated with interfaces and charge injection into resistive media are presented. The second part details technological aspects such as the fabrication of devices based on organic materials by dry etching. The princ...

  7. FABRICATION, MORPHOLOGICAL AND OPTOELECTRONIC ...

    2014-12-31

    Dec 31, 2014 ... porous silicon has better optoelectronic properties than bulk .... Measurement: The morphological properties of PS layer such as nanocrystalline size, the .... excess carrier removal by internal recombination and diffusion.

  8. Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

    Liang, Yu Teng

    Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic

  9. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  10. Reconfigurable Integrated Optoelectronics

    Richard Soref

    2011-01-01

    Full Text Available Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs and photonic integrated circuits (PICs manufactured in a high-volume foundry. We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics. This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the electro-optical building blocks. We illustrate these modules in detail and discuss 3D ROEIC chips for the highest-performance signal processing. We present examples of our module theory for RPIC optical lattice filters already constructed, and we propose new ROEICs for directed optical logic, large-scale matrix switching, and 2D beamsteering of a phased-array microwave antenna. In general, large-scale-integrated ROEICs will enable significant applications in computing, quantum computing, communications, learning, imaging, telepresence, sensing, RF/microwave photonics, information storage, cryptography, and data mining.

  11. Role of Ni2+(d8) ions in electrical, optical and magnetic properties of CdS nanowires for optoelectronic and spintronic applications

    Arshad Kamran, Muhammad

    2018-06-01

    For the first time, 1D Ni ion doped CdS nanowires (NWs) were synthesized via chemical vapour deposition (CVD). The synthesized Cd0.886Ni0.114S NWs were single crystalline. We have reported here the investigation of optical, electrical and magnetic properties of prepared NWs for optoelectronic and spintronic applications. Successful incorporation of Ni ions in an individual CdS NW has been confirmed through several characterization tools: significantly higher angle and phonon mode shift were observed in the XRD and Raman spectra. SEM-EDX and XPS analysis also confirmed the presence of Ni2+ ions. Room temperature photoluminescence (RT-PL) showed multiple peaks: two emission peaks in the visible region centered at 517.1 nm (green), 579.2 nm (orange), and a broad-band near infra-red (NIR) emission centered at 759.9 nm. The first peak showed 5 nm red shift upon Ni2+ doping, hinting at the formation of exciton magnetic polarons (EMPs), and broad NIR emission was observed in both chlorides and bromides, which was assigned to d‑d transition of Ni ions whose energy levels lying at 749.51 nm (13 342 cm–1) and 750.98 nm (13 316 cm–1) are very close to NIR emission. Orange emission not only remained at same peak position—its PL intensity was also significantly enhanced at 78 K; this was assigned to d‑d transition (3A2g → 1Eg) of Ni2+ ions. It was observed that 11.4% Ni2+ ion doping enhanced the conductivity of our sample around 20 times, and saturation magnetization (Ms) increased from 7.2 × 10‑5 Am2/Kg to 1.17 × 10‑4 Am2/Kg, which shows promise for optoelectronic and spintronic applications.

  12. Medical applications for pharmacists using mobile devices.

    Aungst, Timothy Dy

    2013-01-01

    Mobile devices (eg, smartphones, tablet computers) have become ubiquitous and subsequently there has been a growth in mobile applications (apps). Concurrently, mobile devices have been integrated into health care practice due to the availability and quality of medical apps. These mobile medical apps offer increased access to clinical references and point-of-care tools. However, there has been little identification of mobile medical apps suitable for the practice of pharmacy. To address the shortage of recommendations of mobile medical apps for pharmacists in daily practice. Mobile medical apps were identified via the iTunes and Google Play Stores via the "Medical" app categories and key word searches (eg, drug information, medical calculators). In addition, reviews provided by professional mobile medical app review websites were used to identify apps. Mobile medical apps were included if they had been updated in the previous 3 months, were available in the US, used evidence-based information or literature support, had dedicated app support, and demonstrated stability. Exclusion criteria included apps that were not available in English, had advertisement bias, used nonreferenced sources, were available only via an institution-only subscription, and were web-based portals. Twenty-seven mobile apps were identified and reviewed that involved general pharmacy practice, including apps that involved drug references, clinical references, medical calculators, laboratory references, news and continuing medical education, and productivity. Mobile medical apps have a variety of features that are beneficial to pharmacy practice. Individual clinicians should consider several characteristics of these apps to determine which are suitable to incorporate into their daily practice.

  13. Investigation, study and practice of optoelectronic MOOCs

    Shi, Jianhua; Liu, Wei; Lei, Bing; Yao, Tianfu; Fu, Sihua

    2017-08-01

    MOOC(Massive Open Online Course) is a new teaching model that has been springing up since 2012. The typical characters are short teaching video, massive learners, flexible place and time to study, etc. Although MOOC is very popular now, opto-electronic MOOCs are not much enough to meet the need of online learners. In this paper, the phylogeny, the current situation and the characters of MOOC were described, the most famous MOOCs' websites, such as Udacity, Coursera, edX, Chinese College MOOC, xuetangx, were introduced, the opto-electronic MOOCs come from these famous MOOCs' website were investigated extensively and studied deeply, the "Application of Opto-electronic Technology MOOC" which was established by our group is introduced, and some conclusions are obtained. These conclusions can give some suggestions to the online learners who are interested in opto-electronic and the teachers who are teaching the opto-electronic curriculums. The preparation of "Opto-electronic Technology MOOC" is described in short.

  14. Semiconductor optoelectronic infrared spectroscopy

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  15. An applicable approach for extracting human heart rate and oxygen saturation during physical movements using a multi-wavelength illumination optoelectronic sensor system

    Alharbi, Samah; Hu, Sijung; Mulvaney, David; Blanos, Panagiotis

    2018-02-01

    The ability to gather physiological parameters such as heart rate (HR) and oxygen saturation (SpO2%) during physical movement allows to continuously monitor personal health status without disrupt their normal daily activities. Photoplethysmography (PPG) based pulse oximetry and similar principle devices are unable to extract the HR and SpO2% reliably during physical movement due to interference in the signals that arise from motion artefacts (MAs). In this research, a flexible reflectance multi-wavelength optoelectronic patch sensor (OEPS) has been developed to overcome the susceptibility of conventional pulse oximetry readings to MAs. The OEPS incorporates light embittered diodes as illumination sources with four different wavelengths, e.g. green, orange, red, and infrared unlike the conventional pulse oximetry devices that normally measure the skin absorption of only two wavelengths (red and infrared). The additional green and orange wavelengths were found to be distinguish to the absorption of deoxyhemoglobin (RHb) and oxyhemoglobin (HbO2). The reliability of extracting physiological parameters from the green and orange wavelengths is due to absorbed near to the surface of the skin, thereby shortening the optical path and so effectively reducing the influence of physical movements. To compensate of MAs, a three-axis accelerometer was used as a reference with help of adaptive filter to reduce MAs. The experiments were performed using 15 healthy subjects aged 20 to 30. The primary results show that there are no significant difference of heart rate and oxygen saturation measurements between commercial devices and OEPS Green (r=0.992), Orange(r=0.984), Red(r=0.952) and IR(r=0.97) and SpO2% (r = 0.982, p = 0.894).

  16. Personalized biomedical devices & systems for healthcare applications

    Chen, I.-Ming; Phee, Soo Jay; Luo, Zhiqiang; Lim, Chee Kian

    2011-03-01

    With the advancement in micro- and nanotechnology, electromechanical components and systems are getting smaller and smaller and gradually can be applied to the human as portable, mobile and even wearable devices. Healthcare industry have started to benefit from this technology trend by providing more and more miniature biomedical devices for personalized medical treatments in order to obtain better and more accurate outcome. This article introduces some recent development in non-intrusive and intrusive biomedical devices resulted from the advancement of niche miniature sensors and actuators, namely, wearable biomedical sensors, wearable haptic devices, and ingestible medical capsules. The development of these devices requires carful integration of knowledge and people from many different disciplines like medicine, electronics, mechanics, and design. Furthermore, designing affordable devices and systems to benefit all mankind is a great challenge ahead. The multi-disciplinary nature of the R&D effort in this area provides a new perspective for the future mechanical engineers.

  17. Mobile devices and computing cloud resources allocation for interactive applications

    Krawczyk Henryk

    2017-06-01

    Full Text Available Using mobile devices such as smartphones or iPads for various interactive applications is currently very common. In the case of complex applications, e.g. chess games, the capabilities of these devices are insufficient to run the application in real time. One of the solutions is to use cloud computing. However, there is an optimization problem of mobile device and cloud resources allocation. An iterative heuristic algorithm for application distribution is proposed. The algorithm minimizes the energy cost of application execution with constrained execution time.

  18. Porous Microfluidic Devices - Fabrication adn Applications

    de Jong, J.; Geerken, M.J.; Lammertink, Rob G.H.; Wessling, Matthias

    2007-01-01

    The major part of microfluidic devices nowadays consists of a dense material that defines the fluidic structure. A generic fabrication method enabling the production of completely porous micro devices with user-defined channel networks is developed. The channel walls can be used as a (selective)

  19. Microscopic analysis of the optoelectronic properties of semiconductor gain media for laser applications; Mikroskopische Analyse optoelektronischer Eigenschaften von Halbleiterverstaerkungsmedien fuer Laseranwendungen

    Bueckers, Christina

    2010-12-03

    A microscopic many-particle theory is applied to model a wide range of semiconductor laser gain materials. The fundamental understanding of the gain medium and the underlying carrier interaction processes allow for the quantitative prediction of the optoelectronic properties governing the laser performance. Detailed theory-experiment-comparisons are shown for a variety of structures demonstrating the application capabilities of the theoretical approach. The microscopically calculated material properties, in particular absorption, optical gain, luminescence and the intrinsic carrier losses due to radiative and Auger-recombination, constitute the critical input to analyse and design laser structures. On this basis, important system features such as laser wavelength or threshold behaviour become predictable. However, the theory is also used in a diagnostic fashion, e.g. to extract otherwise poorly known structural parameter. Thus, novel concepts for the optimisation of laser designs may be developed with regard to the requirements of specific applications. Moreover, the approach allows for the systematic exploration and assessment of completely novel material systems and their application potential. (orig.)

  20. Optoelectronics circuits manual

    Marston, R M

    1999-01-01

    This manual is a useful single-volume guide specifically aimed at the practical design engineer, technician, and experimenter, as well as the electronics student and amateur. It deals with the subject in an easy to read, down to earth, and non-mathematical yet comprehensive manner, explaining the basic principles and characteristics of the best known devices, and presenting the reader with many practical applications and over 200 circuits. Most of the ICs and other devices used are inexpensive and readily available types, with universally recognised type numbers.The second edition

  1. Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

    Khan, Jafar Iqbal; Adhikari, Aniruddha; Sun, Jingya; Priante, Davide; Bose, Riya; Shaheen, Basamat; Ng, Tien Khee; Zhao, Chao; Bakr, Osman; Ooi, Boon S.; Mohammed, Omar F.

    2016-01-01

    Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A

  2. Devices for Emergency Hypothermia and Military Applications

    Gill, Ralph

    2002-01-01

    Ongoing research by the Safar Center for Resuscitation Research and others, indicates the need for the development of compact, mobile, and portable devices for the induction of therapeutic hypothermia...

  3. Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

    Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

    2013-10-13

    Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

  4. Perspectives in optoelectronics

    Jha, Sudhanshu S

    1995-01-01

    ..., optoelectronics is playing a major role in both applied as well as basic sciences. In years to come, i t is destined to change the face of information technology and robotics, involving optical sensing and control, information storage, signal and image processing, communications, and computing. Because of the possibility of using large bandwidths availa...

  5. Nanostructured Transparent Conducting Oxides for Device Applications

    Dutta, Titas

    2011-12-01

    ) based on these surfaces modified TCO layers have shown an increase in the open circuit voltage (Voc) and/or increase in Fill factor (FF) and the power conversion efficiency of these devices. These results suggest that the surface modified GZO films have a potential to substitute for ITO in transparent electrode applications. To gain a better understanding of the fundamentals and factors affecting the properties of p-type TCO, NiO thin films have been grown on c-sapphire and glass substrates with controlled properties. Growth of NiO on c-sapphire occurs epitaxially in [111] direction with two types of crystalline grains rotated by 60° with respect to each other. We have also investigated the effects of the deposition parameters and Li doping concentration variations on the electrical and optical properties of NiO thin films. The analysis of the resistivity measurement showed that doped Li+ ions occupy the substitutional sites in the NiO films, enhancing the p-type conductivity. The minimum resistivity of 0.15 O-cm was obtained for Li0.07Ni 0.93O film. The results of this research help to understand the conduction mechanisms in TCOs and are critical to further improvement and optimization of TCO properties. This work has also demonstrated interesting possibilities for fabricating a p-LixNi1-xO/ i-MgZnO /n-ZnO heterojunction diode on c-sapphire. It has been demonstrated that epitaxial LixNi 1-xO can be grown on ZnO integrated with c-sapphire. Heteroeptaxial growth of the p-n junction is technologically important as it minimizes the electron scattering at the interface. The insertion of i-MgZnO between the p and n layer led to improved current-voltage characteristics with reduced leakage current. An attempt has been made to elucidate the role of point defects, in controlling the carrier concentration and transport characteristics of nanostructured TCO films. This study presents the systematic changes in structural, electrical and optical properties of NiO thin films

  6. Wearable Device Control Platform Technology for Network Application Development

    Heejung Kim

    2016-01-01

    Full Text Available Application development platform is the most important environment in IT industry. There are a variety of platforms. Although the native development enables application to optimize, various languages and software development kits need to be acquired according to the device. The coexistence of smart devices and platforms has rendered the native development approach time and cost consuming. Cross-platform development emerged as a response to these issues. These platforms generate applications for multiple devices based on web languages. Nevertheless, development requires additional implementation based on a native language because of the coverage and functions of supported application programming interfaces (APIs. Wearable devices have recently attracted considerable attention. These devices only support Bluetooth-based interdevice communication, thereby making communication and device control impossible beyond a certain range. We propose Network Application Agent (NetApp-Agent in order to overcome issues. NetApp-Agent based on the Cordova is a wearable device control platform for the development of network applications, controls input/output functions of smartphones and wearable/IoT through the Cordova and Native API, and enables device control and information exchange by external users by offering a self-defined API. We confirmed the efficiency of the proposed platform through experiments and a qualitative assessment of its implementation.

  7. Dual-scale topology optoelectronic processor.

    Marsden, G C; Krishnamoorthy, A V; Esener, S C; Lee, S H

    1991-12-15

    The dual-scale topology optoelectronic processor (D-STOP) is a parallel optoelectronic architecture for matrix algebraic processing. The architecture can be used for matrix-vector multiplication and two types of vector outer product. The computations are performed electronically, which allows multiplication and summation concepts in linear algebra to be generalized to various nonlinear or symbolic operations. This generalization permits the application of D-STOP to many computational problems. The architecture uses a minimum number of optical transmitters, which thereby reduces fabrication requirements while maintaining area-efficient electronics. The necessary optical interconnections are space invariant, minimizing space-bandwidth requirements.

  8. Handbook of terahertz technologies devices and applications

    Song, Ho-Jin

    2015-01-01

    Terahertz waves, which lie in the frequency range of 0.1-10 THz, have long been investigated in a few limited fields, such as astronomy, because of a lack of devices for their generation and detection. Several technical breakthroughs made over the last couple of decades now allow us to radiate and detect terahertz waves more easily, which has triggered the search for new uses of terahertz waves in many fields, such as bioscience, security, and information and communications technology. The book covers some of the technical breakthroughs in terms of device technologies. It discusses not only th

  9. Optoelectronic lessons as an interdisciplinary lecture

    Wu, Dan; Wu, Maocheng; Gu, Jihua

    2017-08-01

    It is noticed that more and more students in college are passionately curious about the optoelectronic technology, since optoelectronic technology has advanced extremely quickly during the last five years and its applications could be found in a lot of domains. The students who are interested in this area may have different educational backgrounds and their majors cover science, engineering, literature and social science, etc. Our course "History of the Optoelectronic Technology" is set up as an interdisciplinary lecture of the "liberal education" at our university, and is available for all students with different academic backgrounds from any departments of our university. The main purpose of the course is to show the interesting and colorful historical aspects of the development of this technology, so that the students from different departments could absorb the academic nourishment they wanted. There are little complex derivations of physical formulas through the whole lecture, but there are still some difficulties about the lecture which is discussed in this paper.

  10. Optoelectronics technologies for Virtual Reality systems

    Piszczek, Marek; Maciejewski, Marcin; Pomianek, Mateusz; Szustakowski, Mieczysław

    2017-08-01

    Solutions in the field of virtual reality are very strongly associated with optoelectronic technologies. This applies to both process design and operation of VR applications. Technologies such as 360 cameras and 3D scanners significantly improve the design work. What is more, HMD displays with high field of view or optoelectronic Motion Capture systems and 3D cameras guarantee an extraordinary experience in immersive VR applications. This article reviews selected technologies from the perspective of their use in a broadly defined process of creating and implementing solutions for virtual reality. There is also the ability to create, modify and adapt new approaches that show team own work (SteamVR tracker). Most of the introduced examples are effectively used by authors to create different VR applications. The use of optoelectronic technology in virtual reality is presented in terms of design and operation of the system as well as referring to specific applications. Designers and users of VR systems should take a close look on new optoelectronics solutions, as they can significantly contribute to increased work efficiency and offer completely new opportunities for virtual world reception.

  11. Thermoelectric devices and applications for the same

    Olsen, Larry C.; DeSteese, John G.; Martin, Peter M.; Johnston, John W.; Peters, Timothy J.

    2016-03-08

    High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

  12. Biomedical device innovation methodology: applications in biophotonics

    Beswick, Daniel M.; Kaushik, Arjun; Beinart, Dylan; McGarry, Sarah; Yew, Ming Khoon; Kennedy, Brendan F.; Maria, Peter Luke Santa

    2018-02-01

    The process of medical device innovation involves an iterative method that focuses on designing innovative, device-oriented solutions that address unmet clinical needs. This process has been applied to the field of biophotonics with many notable successes. Device innovation begins with identifying an unmet clinical need and evaluating this need through a variety of lenses, including currently existing solutions for the need, stakeholders who are interested in the need, and the market that will support an innovative solution. Only once the clinical need is understood in detail can the invention process begin. The ideation phase often involves multiple levels of brainstorming and prototyping with the aim of addressing technical and clinical questions early and in a cost-efficient manner. Once potential solutions are found, they are tested against a number of known translational factors, including intellectual property, regulatory, and reimbursement landscapes. Only when the solution matches the clinical need, the next phase of building a "to market" strategy should begin. Most aspects of the innovation process can be conducted relatively quickly and without significant capital expense. This white paper focuses on key points of the medical device innovation method and how the field of biophotonics has been applied within this framework to generate clinical and commercial success.

  13. High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

    Singh, Rajwinder

    Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

  14. An investigation on linear and non-linear optical constants of nano-spherical CuPc thin films for optoelectronic applications

    Yahia, I. S.; Ganesh, V.; Shkir, M.; AlFaify, S.; Zahran, H. Y.; Algarni, H.; Abutalib, M. M.; Al-Ghamdi, Attieh A.; El-Naggar, A. M.; AlBassam, A. M.

    2016-09-01

    In the current work, the authors present the systematic study on linear and nonlinear optical properties of Copper-phathalocyanine thin film deposited by thermal evaporation system for the first time. The thickness of the prepared thin film was measured and found to be ~300 nm. X-ray diffraction and AFM study confirms that the prepared thin film possess good quality. The orientation of the grown thin film is found to be along (100). UV-vis-NIR study shows that the deposited thin film is highly transparent (>80%) in the wavelength range of 700-2500 nm. Further, the recorded optical data was used to determine the various linear and nonlinear optical parameters. The calculated value of refractive index is found to be in the range of 0.4-1.0. The direct and indirect band gap value is found to be 2.9 and 3.25 eV, respectively. The value of linear and nonlinear susceptibilities is found to be in order of 10-12. The higher value of linear and nonlinear parameters makes it suitable for optoelectronic applications.

  15. An investigation on linear and non-linear optical constants of nano-spherical CuPc thin films for optoelectronic applications

    Yahia, I.S. [Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Ganesh, V. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Shkir, M., E-mail: shkirphysics@gmail.com [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); AlFaify, S. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Zahran, H.Y. [Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Algarni, H. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abutalib, M.M.; Al-Ghamdi, Attieh A. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, Jeddah (Saudi Arabia); El-Naggar, A.M.; AlBassam, A.M. [Research Chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Dept., College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2016-09-01

    In the current work, the authors present the systematic study on linear and nonlinear optical properties of Copper-phathalocyanine thin film deposited by thermal evaporation system for the first time. The thickness of the prepared thin film was measured and found to be ~300 nm. X-ray diffraction and AFM study confirms that the prepared thin film possess good quality. The orientation of the grown thin film is found to be along (100). UV–vis-NIR study shows that the deposited thin film is highly transparent (>80%) in the wavelength range of 700–2500 nm. Further, the recorded optical data was used to determine the various linear and nonlinear optical parameters. The calculated value of refractive index is found to be in the range of 0.4–1.0. The direct and indirect band gap value is found to be 2.9 and 3.25 eV, respectively. The value of linear and nonlinear susceptibilities is found to be in order of 10{sup −12}. The higher value of linear and nonlinear parameters makes it suitable for optoelectronic applications.

  16. Facile hydrothermal synthesis and characterization of cesium-doped PbI2 nanostructures for optoelectronic, radiation detection and photocatalytic applications

    Shkir, Mohd; AlFaify, S.; Yahia, I. S.; Hamdy, Mohamed S.; Ganesh, V.; Algarni, H.

    2017-10-01

    Low-temperature hydrothermal-assisted synthesis of pure and cesium (Cs) (1, 3, 5, 7 and 10 wt%) doped lead iodide (PbI2) nanorods and nanosheets have been achieved successfully for the first time. The structural and vibrational studies confirm the formation of a 2H-polytypic PbI2 predominantly. Scanning electron microscope analysis confirms the formation of well-aligned nanorods of average size 100 nm at low concentration and nanosheets of average thicknesses in the range of 20-40 nm at higher concentrations of Cs doping. The presence of Cs doping was confirmed by energy dispersive X-ray study. Ultra-violet-visible absorbance spectra were recorded, and energy gap was calculated in the range of 3.33 to 3.45 eV for pure and Cs-doped PbI2 nanostructures which is higher than the bulk value (i.e., 2.27 eV) due to quantum confinement effect. Dielectric constant, loss, and AC conductivity studies have been done. Enhancement in Gamma linear absorption coefficient due to Cs doping confirms the suitability of prepared nanostructures for radiation detection applications. Furthermore, the photocatalytic performance of the synthesized nanostructures was evaluated in the decolorization of methyl green (MG) and methyl orange (MO) under the illumination of visible light (λ > 420 nm). The observed photocatalytic activity for 5 and 7 wt% Cs-doped PbI2 was observed to be more than pure PbI2 and also > 10 times higher than the commercially available photocatalysts. The results suggest that the prepared nanostructures are highly applicable in optoelectronic, radiation detection and many other applications. [Figure not available: see fulltext.

  17. Insulating materials for optoelectronics

    Agullo-Lopez, F.

    1990-01-01

    Optoelectronics is an interdisciplinary field. Basic functions of an optoelectronic system include the generator of the optical signal, its transmission and handling and, finally, its detection, storage and display. A large variety of semiconductor and insulating materials are used or are being considered to perform those functions. The authors focus on insulating materials, mostly oxides. For signal generation, tunable solid state lasers, either vibronic or those based oon colour centres are briefly described, and their main operating parameters summarized. Reference is made to some developments on fiber and waveguide lasers. Relevant physical features of the silica fibres used for low-loss, long-band, optical transmission are reviewed, as well as present efforts to further reduce attenuation in the mid-infrared range. Particular attention is paid to photorefractive materials (LiNbO 3 , BGO, BSO, etc.), which are being investigated

  18. 2D Vertical Heterostructures for Novel Tunneling Device Applications

    2017-03-01

    2D Vertical Heterostructures for Novel Tunneling Device Applications Philip M. Campbell, Christopher J. Perini, W. Jud Ready, and Eric M. Vogel...School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA, USA 30332 Abstract: Vertical heterostructures...digital logic, signal processing, analog-to-digital conversion, and high-frequency communications, vertical heterostructure tunneling devices have

  19. Application and Design Characteristics of Generalized Training Devices.

    Parker, Edward L.

    This program identified applications and developed design characteristics for generalized training devices. The first of three sequential phases reviewed in detail new developments in Naval equipment technology that influence the design of maintenance training devices: solid-state circuitry, modularization, digital technology, standardization,…

  20. Compact integrated optical devices for optical sensor and switching applications

    Kauppinen, L.J.

    2010-01-01

    This thesis describes the design, fabrication, and characterization of compact optical devices for sensing and switching applications. Our focus has been to realize the devices using CMOS-compatible fabrication processes. Particularly the silicon photonics fabrication platform, ePIXfab, has been

  1. Device Data Protection in Mobile Healthcare Applications

    Weerasinghe, Dasun; Rajarajan, Muttukrishnan; Rakocevic, Veselin

    The rapid growth in mobile technology makes the delivery of healthcare data and services on mobile phones a reality. However, the healthcare data is very sensitive and has to be protected against unauthorized access. While most of the development work on security of mobile healthcare today focuses on the data encryption and secure authentication in remote servers, protection of data on the mobile device itself has gained very little attention. This paper analyses the requirements and the architecture for a secure mobile capsule, specially designed to protect the data that is already on the device. The capsule is a downloadable software agent with additional functionalities to enable secure external communication with healthcare service providers, network operators and other relevant communication parties.

  2. Application of Semiconductor Devices in Computer Technique.

    1960-10-14

    large number of circuits v&th point-contact triod.es are used in practice f’^J" - £"i? 7° Yfe shall consider below only sojae of 7 «. -X... la a number of devices, for example in adders and registersj for the control and for connection with other circuits it is necessary to pick up... la discontin tied the voltage on the collector remains the saaaes fox’ some tiae and passing through •’the has© and collector is the space

  3. Spectroscopic Studies of Semiconductor Materials for Aggressive-scaled Micro- and Opto-electronic Devices: nc-SiO2, GeO2; ng-Si, Ge and ng-Transition metal (TM) oxides

    Cheng, Cheng

    Non-crystalline thin film materials are widely used in the semiconductor industry (micro- and optoelectronics) and in green energy, e.g., photovolatic applications. This dissertation under-pins these device application with studies of their electronic structures using derivative X-ray Absorption Spectroscopy (XAS) and derivative Spectroscopic Ellipsometry (SE) for the first time to experimentally determine electronic and intrinsic defect structures. Differences between electron and hole mobilities in c- (and ng-Si) and c- (and ng- Ge), make Ge channels superior to Si channels in for aggressively scaled CMOS field effect transistors (FETs). Bonding between Si and Ge substrates and gate dielectric oxides is the focus this dissertation. The primary objective of this research is to measure and interpret by ab-initio theory the electronic and intrinsic electronic defect structures mirco-electronic thin film materials. This is accomplished for the first time by combining (i) derivative XAS TEY data obtained at the Stanford Synchrotron Radiation Light Source (SSRL) with (ii) derivative Spectroscopic Ellipsometry results obtained at the J.A. Woollam Co. laboratory. All the oxides were deposited in RPECVD system with in-line AES and RHEED. Thins films and gate stacks were annealed in RTA system in Ar to determine temperature dependent changes. 2nd derivative analysis is applied on XAS and SE spectra emphasizing the conduction band (CB) and virtual bound state (VBS) regimes. 2nd derivative SE spectra for ng-Si and ng-Ge each have 3 distinct regimes: (i) 3 excitons, (ii) 2 features in the CB edge region, and (iii) 3 additional exciton features above the IP. Excitonic spectral width provides conductivity electron masses (em0*) and hence electron mobilities. The wider the energy range, the higher the electron mobility in that CB. Spectra of high-K dielectrics have an additional energy regime between the CB edge regime, and the higher eV excitons. This regime has 4 intra-d state

  4. Frontiers of graphene and carbon nanotubes devices and applications

    2015-01-01

    This book focuses on carbon nanotubes and graphene as representatives of nano-carbon materials, and describes the growth of new technology and applications of new devices. As new devices and as new materials, nano-carbon materials are expected to be world pioneers that could not have been realized with conventional semiconductor materials, and as those that extend the limits of conventional semiconductor performance. This book introduces the latest achievements of nano-carbon devices, processes, and technology growth. It is anticipated that these studies will also be pioneers in the development of future research of nano-carbon devices and materials. This book consists of 18 chapters. Chapters 1 to 8 describe new device applications and new growth methods of graphene, and Chapters 9 to 18, those of carbon nanotubes. It is expected that by increasing the advantages and overcoming the weak points of nanocarbon materials, a new world that cannot be achieved with conventional materials will be greatly expanded. W...

  5. Nanopatterning and nanoscale devices for biological applications

    Šelimović, Seila

    2014-01-01

    ""This book is a good reference for researchers interested in realizing bio-applications based on micro- and nanostructures, where their interface with liquids and biomolecules is the key point. The most important 'players' of micro- and nano-bioengineering are considered, from DNA to proteins and cells. The work is a good merger of basic concepts and real examples of applications.""-Danilo Demarchi, Politecnico di Torino, Italy

  6. Photo-induced conductivity in 2, 6-diaminopyridine functionalized graphene oxide containing Eu2+ for optoelectronic applications

    Mondal, Supriya; Gupta, Abhisek; Shaw, Bikash Kumar; Saha, Shyamal K.

    2017-11-01

    Although, graphene is a unique electronic material, its optical property especially photoluminescence behavior is very poor. Several techniques have been developed to invoke optical property in graphene. Among these, functionalization is the most powerful technique to introduce optical property in graphene. In the present work, graphene oxide is functionalized by Diaminopyridine to achieve bright blue-green emission and subsequently Eu2+ ions are attached to the nitrogen due to electrostatic interaction between Eu2+ and the loan pair electrons of pyridinic nitrogen to tune the photoluminescence peak more broaden (extended upto green) and intense. This enhancement of photoluminescence property has been used to achieve superior photocurrent. By inducing photons, the conductivity of the device structure ITO/PEDOT: PSS/RGO-Amino-Pyridine-Eu2+/Al is better changed than that of the dark condition. It is also investigated the concentration of Eu2+ and thickness dependent photocurrent to optimize the photocurrent. Time correlated Single Photon Counting (TCSPC) spectra, Density Functional Theory (DFT) and Band structure have been used to explain this enhancement in photoluminescence and photocurrent. The formation of layered type materials with Eu2+ attached to pyridine moiety has also been confirmed by FTIR, Raman spectroscopy, AFM, XPS, TEM, and FESEM.

  7. 2-Amino 4-methylpyridinium 3-chlorobenzoate - A phase matchable organic nonlinear optical material for optoelectronics device applications

    Babu, B.; Chandrasekaran, J.; Thirumurugan, R.; Anitha, K.; Saravanabhavan, M.

    2017-09-01

    2-Amino 4-methylpyridinium 3-chlorobenzoate (2A4M3CB) was synthesized and good quality single crystals of the size of 8 × 2 × 1.2 mm3 were harvested from methanol by the slow evaporation solution growth technique at ambient temperature. Single crystal XRD reveals that 2A4M3CB crystallized in monoclinic system with the noncentrosymmetric space group P21. The crystalline phases and functional groups of 2A4M3CB have been identified and confirmed through powder X-ray diffraction and Fourier transform infrared (FTIR) studies, respectively. 1H and 13C NMR were recorded to interpret the molecular structure. The optical transmittance window and the lower cutoff wavelength of the 2A4M3CB have been identified by UV-Vis-NIR studies. Thermal and mechanical stability of the 2A4M3CB crystals were explained by TG/DTA and Vickers hardness analysis. Charge transport mechanism and photo response properties were analyzed through dielectric and photoconductivity studies. Powder second harmonic generation (SHG) characteristics and phase matching ability were explored by Kurtz and Perry powder SHG technique.

  8. Growth and characterizaion of urea p-nitrophenol crystal: an organic nonlinear optical material for optoelectronic device application

    Suresh, A.; Manikandan, N.; Jauhar, RO. MU.; Murugakoothan, P.; Vinitha, G.

    2018-06-01

    Urea p-nitrophenol, an organic nonlinear optical crystal was synthesized and grown adopting slow evaporation and seed rotation method. Single crystal X-ray diffraction study confirmed the formation of the desired crystal. High resolution X-ray diffraction study showed the defect nature of the crystal. The presence of functional groups in the material was confirmed by FTIR analysis. UV-Vis-NIR study indicates that the grown crystal has a wider transparency region with the lower cutoff wavelength at 423 nm. The grown crystal is thermally stable up to 120 °C as assessed by TG-DTA analysis. The optical homogeneity of the grown crystal was confirmed by birefringence study. The 1064 nm Nd-YAG laser was used to obtain laser induced surface damage threshold which was found to be 0.38, 0.25 and 0.33 GW/cm2 for (0 1 0), (1 1 - 1) and (0 1 1) planes, respectively. The dielectric study was performed to find the charge distribution inside the crystal. The hardness property of the titular material has been found using Vicker's microhardness study. The optical nonlinearity obtained from third order nonlinear optical measurements carried out using Z-scan technique showed that these samples could be exploited for optical limiting studies.

  9. Discharge amplified photo-emission from ultra-thin films applied to tuning work function of transparent electrodes in organic opto-electronic devices

    Gentle, A.R.; Smith, G.B.; Watkins, S.E.

    2013-01-01

    A novel photoemission technique utilising localised discharge amplification of photo-yield is reported. It enables fast, accurate measurement of work function and ionisation potential for ultra-thin buffer layers vacuum deposited onto single and multilayer transparent conducting electrodes for organic solar cells and OLED's. Work function in most traditional transparent electrodes has to be raised to maximise charge transfer while high transmittance and high conductance must be retained. Results are presented for a range of metal oxide buffers, which achieve this goal. This compact photo-yield spectroscopy tool with its fast turn-around has been a valuable development aid since ionisation potential can vary significantly as deposition conditions change slightly, and as ultra-thin films grow. It has also been useful in tracking the impact of different post deposition cleaning treatments along with some storage and transport protocols, which can adversely reduce ionisation potential and hence subsequent device performance.

  10. Fabrication of plasmonic waveguides for device applications

    Boltasseva, Alexandra; Leosson, Kristjan; Rosenzveig, Tiberiu

    2007-01-01

    and thickness-modulated gold strips different waveguide components including reflecting gratings can be realized. For applications where polarization is random or changing, metal nanowire waveguides are shown to be suitable candidates for efficient guiding of arbitrary polarized light. Plasmonic waveguides...

  11. System Control Applications of Low-Power Radio Frequency Devices

    van Rensburg, Roger

    2017-09-01

    This paper conceptualizes a low-power wireless sensor network design for application employment to reduce theft of portable computer devices used in educational institutions today. The aim of this study is to design and develop a reliable and robust wireless network that can eradicate accessibility of a device’s human interface. An embedded system supplied by an energy harvesting source, installed on the portable computer device, may represent one of multiple slave nodes which request regular updates from a standalone master station. A portable computer device which is operated in an undesignated area or in a field perimeter where master to slave communication is restricted, indicating a possible theft scenario, will initiate a shutdown of its operating system and render the device unusable. Consequently, an algorithm in the device firmware may ensure the necessary steps are executed to track the device, irrespective whether the device is enabled. Design outcomes thus far indicate that a wireless network using low-power embedded hardware, is feasible for anti-theft applications. By incorporating one of the latest Bluetooth low-energy, ANT+, ZigBee or Thread wireless technologies, an anti-theft system may be implemented that has the potential to reduce major portable computer device theft in institutions of digitized learning.

  12. Ferrite nanoparticles: Synthesis, characterisation and applications in electronic device

    Kefeni, Kebede K., E-mail: kkefeni@gmail.com; Msagati, Titus A.M.; Mamba, Bhekie B.

    2017-01-15

    Highlights: • Available synthesis methods of ferrite nanoparticles (FNPs) are briefly reviewed. • Summary of the advantage and limitation of FNPs synthesis techniques are presented. • The existing most common FNPs characterisation techniques are briefly reviewed. • Major application areas of FNPs in electronic materials are reviewed. - Abstract: Ferrite nanoparticles (FNPs) have attracted a great interest due to their wide applications in several areas such as biomedical, wastewater treatment, catalyst and electronic device. This review focuses on the synthesis, characterisation and application of FNPs in electronic device with more emphasis on the recently published works. The most commonly used synthesis techniques along with their advantages and limitations are discussed. The available characterisation techniques and their application in electronic materials such as sensors and biosensors, energy storage, microwave device, electromagnetic interference shielding and high-density recording media are briefly reviewed.

  13. Joint with application in electrochemical devices

    Weil, K Scott [Richland, WA; Hardy, John S [Richland, WA

    2010-09-14

    A joint for use in electrochemical devices, such as solid oxide fuel cells (SOFCs), oxygen separators, and hydrogen separators, that will maintain a hermetic seal at operating temperatures of greater than 600.degree. C., despite repeated thermal cycling excess of 600.degree. C. in a hostile operating environment where one side of the joint is continuously exposed to an oxidizing atmosphere and the other side is continuously exposed to a wet reducing gas. The joint is formed of a metal part, a ceramic part, and a flexible gasket. The flexible gasket is metal, but is thinner and more flexible than the metal part. As the joint is heated and cooled, the flexible gasket is configured to flex in response to changes in the relative size of the metal part and the ceramic part brought about by differences in the coefficient of thermal expansion of the metal part and the ceramic part, such that substantially all of the tension created by the differences in the expansion and contraction of the ceramic and metal parts is absorbed and dissipated by flexing the flexible gasket.

  14. Rational growth of semi-polar ZnO texture on a glass substrate for optoelectronic applications

    Lu, B.; Ma, M. J.; Ye, Y. H.; Lu, J. G.; He, H. P.; Ye, Z. Z.

    2013-02-01

    Semi-polar ZnO films with surface texture were grown on glass substrates via pulsed-laser deposition (PLD) through Co-Ga co-doping. Oxygen pressure (PO2) was found to have significant effects on the structural and optical properties of the Zn(Co, Ga)O (ZCGO) films. A self-textured film with (1\\,0\\,\\bar {1}\\,1) preferred orientation (PO) was achieved by varying the growth conditions including a crucial narrow PO2 window and growth time. A possible mechanism underlying the PO evolution and the final texture of the films was proposed, which can be attributed to the collaboration of the doping effect and the PO2-dependent evolutionary selection process, in which certain grains can have increased vertical growth rate with respect to the substrate surface through interplane diffusion. Moreover, the growth of undoped pure ZnO films proceeded by using the (1\\,0\\,\\bar {1}\\,1) ZCGO film as a buffer layer. The ZnO layers retained a semi-polar characteristic with improved crystallinity and better optical quality. The epitaxy-like orientation of ZnO layers grown on (1\\,0\\,\\bar {1}\\,1) ZCGO films has applications in the development of semi-polar ZnO-based light-emitting diodes.

  15. Linear Optical Properties of Zinc Borotellurite Glass Doped with Lanthanum Oxide Nanoparticles for Optoelectronic and Photonic Application

    Faznny Mohd Fudzi

    2017-01-01

    Full Text Available Enhancing the optical properties of glasses for the sake of optical application in various fields is an ongoing challenge in materials science and technology. Thus, the optical properties of zinc borotellurite glass doped with lanthanum oxide nanoparticles (La2O3 NPs with the chemical composition of {[(TeO20.7(B2O30.3]0.7(ZnO0.3}1−x (La2O3 NPsx, where x = 0.01, 0.02, 0.03, 0.04, and 0.05 molar fraction, have been investigated. Characterization techniques such as x-ray diffraction, Fourier Transform Infrared Spectroscopy, and Ultraviolet-Visible Spectroscopy are employed to yield the structural properties and optical parameter of the glass. The amorphous nature of the fabricated glasses is confirmed with the presence of a broad hump via XRD diffraction pattern. The decreasing amount of high polarizable nonbridging oxygen as the concentration of La2O3 NPs increases has contributed to the increasing trend of energy band gap in the range of 2.70 to 3.52 eV and decreasing value of refractive index between 2.34 and 2.48. The fabricated glasses that have a higher refractive index than the widely used fiber material, pure silica glass, indicate that zinc borotellurite glass doped with lanthanum nanoparticles is a promising material to be applied as optical fibers.

  16. Microfluidic optoelectronic sensor for salivary diagnostics of stomach cancer.

    Zilberman, Yael; Sonkusale, Sameer R

    2015-05-15

    We present a microfluidic optoelectronic sensor for saliva diagnostics with a potential application for non-invasive early diagnosis of stomach cancer. Stomach cancer is the second most common cause of cancer-related deaths in the world. The primary identified cause is infection by a gram-negative bacterium Helicobacter pylori. These bacteria secrete the enzyme urease that converts urea into carbon dioxide (CO2) and ammonia (NH3), leading to their elevated levels in breath and body fluids. The proposed optoelectronic sensor will detect clinically relevant levels of CO2 and NH3 in saliva that can potentially be used for early diagnosis of stomach cancer. The sensor is composed of the embedded in a microfluidic device array of microwells filled with ion-exchange polymer microbeads doped with various organic dyes. The optical response of this unique highly diverse sensor is monitored over a broad spectrum, which provides a platform for cross-reactive sensitivity and allows detection of CO2 and NH3 in saliva at ppm levels. Copyright © 2014 Elsevier B.V. All rights reserved.

  17. Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

    Cheng Chuantong

    2017-07-01

    Full Text Available Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

  18. Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

    Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

    2017-07-01

    Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

  19. Mutual alloying of XAs (X=Ga, In, Al) materials: Tuning the optoelectronic and thermodynamic properties for solar energy applications

    Haq, Bakhtiar Ul

    2014-02-01

    In the present work we did mutual alloying of the versatile XAs (X=Ga, In, Al) materials in order to improve their efficiency and enhance their range of technological applications using state of the art first principles method. We investigate the structural, electronic and thermodynamic properties of Ga1-xAlxAs, Ga1-xInxAs and In1-xAlxAs for x=0.25, 0.50, and 0.75. Calculations have been performed using the density functional theory (DFT) as implemented within the full potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. For exchange and correlation energy treatment, we employed the local density approximations (LDA) as proposed by Wang and Perdew and the generalized gradient approximation (GGA) from Perdew et al. proposed. To calculate the accurate band structure, recently modified Becke Johnson (mBJ) potential was suggested as an alternative. Our calculations show a linear fall in the lattice constant in contrast to linear rise in bulk moduli of Ga1-xAlxAs and In1-xAlxAs with the increase of Al concentration. However the change of indium concentration in Ga1-xInxAs is displaying a reverse effect. The energy band gap of Ga1-xAlxAs and In1-xAlxAs was found to be increased, where a crossover from direct to indirect band gap has been observed with the increase of Al concentration. This direct to indirect crossover was found at 93.4% of Al concentration for Ga1-xAlxAs and at 84.63% of Al concentration for In1-xAlxAs. The effect of the mutual alloying of XAs materials on the thermodynamic properties is comprehensively reported. © 2013 Elsevier Ltd.

  20. Mutual alloying of XAs (X=Ga, In, Al) materials: Tuning the optoelectronic and thermodynamic properties for solar energy applications

    Haq, Bakhtiar Ul; Ahmed, Rashid; El Haj Hassan, Fouad; Khenata, Rabah; Kasmin, Mohd Khalid; Goumri-Said, Souraya

    2014-01-01

    In the present work we did mutual alloying of the versatile XAs (X=Ga, In, Al) materials in order to improve their efficiency and enhance their range of technological applications using state of the art first principles method. We investigate the structural, electronic and thermodynamic properties of Ga1-xAlxAs, Ga1-xInxAs and In1-xAlxAs for x=0.25, 0.50, and 0.75. Calculations have been performed using the density functional theory (DFT) as implemented within the full potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. For exchange and correlation energy treatment, we employed the local density approximations (LDA) as proposed by Wang and Perdew and the generalized gradient approximation (GGA) from Perdew et al. proposed. To calculate the accurate band structure, recently modified Becke Johnson (mBJ) potential was suggested as an alternative. Our calculations show a linear fall in the lattice constant in contrast to linear rise in bulk moduli of Ga1-xAlxAs and In1-xAlxAs with the increase of Al concentration. However the change of indium concentration in Ga1-xInxAs is displaying a reverse effect. The energy band gap of Ga1-xAlxAs and In1-xAlxAs was found to be increased, where a crossover from direct to indirect band gap has been observed with the increase of Al concentration. This direct to indirect crossover was found at 93.4% of Al concentration for Ga1-xAlxAs and at 84.63% of Al concentration for In1-xAlxAs. The effect of the mutual alloying of XAs materials on the thermodynamic properties is comprehensively reported. © 2013 Elsevier Ltd.

  1. Carbon dots—Emerging light emitters for bioimaging, cancer therapy and optoelectronics

    Hola, Katerina; Zhang, Yu; Wang, Yu; Giannelis, Emmanuel P.; Zboril, Radek; Rogach, Andrey L.

    2014-01-01

    © 2014 Elsevier Ltd. All rights reserved. Carbon dots represent an emerging class of fluorescent materials and provide a broad application potential in various fields of biomedicine and optoelectronics. In this review, we introduce various synthetic strategies and basic photoluminescence properties of carbon dots, and then address their advanced in vitro and in vivo bioapplications including cell imaging, photoacoustic imaging, photodynamic therapy and targeted drug delivery. We further consider the applicability of carbon dots as components of light emitting diodes, which include carbon dot based electroluminescence, optical down-conversion, and hybrid plasmonic devices. The review concludes with an outlook towards future developments of these emerging light-emitting materials.

  2. Carbon dots—Emerging light emitters for bioimaging, cancer therapy and optoelectronics

    Hola, Katerina

    2014-10-01

    © 2014 Elsevier Ltd. All rights reserved. Carbon dots represent an emerging class of fluorescent materials and provide a broad application potential in various fields of biomedicine and optoelectronics. In this review, we introduce various synthetic strategies and basic photoluminescence properties of carbon dots, and then address their advanced in vitro and in vivo bioapplications including cell imaging, photoacoustic imaging, photodynamic therapy and targeted drug delivery. We further consider the applicability of carbon dots as components of light emitting diodes, which include carbon dot based electroluminescence, optical down-conversion, and hybrid plasmonic devices. The review concludes with an outlook towards future developments of these emerging light-emitting materials.

  3. Charge transfer devices and their application in physics

    Soroko, L M [Joint Inst. for Nuclear Research, Dubna (USSR)

    1979-01-01

    Physical properties and technical specifications of charge transfer devices (CTD) are reviewed. The CTD are semiconductor devices based on silicon single crystals. The limiting charge density of the CTD, their efficiency of charge transfer, the background noise and radiation effects are considered. Fast response and low energy consumption are characteristic features of the devices. The application of the CTD in storage devices, real time spectral data processing systems and in streamer chambers is described. The algorithms of topological transformations in the stage of scanning particle track images, which can be realized with the help of the CTD are shortly considered. It is pointed out that applications of the CTD in different fields of science and technology are numerous and expanding.

  4. Application of plasma focus device to compression of toroidal plasma

    Ikuta, Kazunari

    1980-01-01

    A new concept of compressing a toroidal plasma using a plasma focus device is considered. Maximum compression ratio of toroidal plasma is determined merely by the initial density ratio of the toroidal plasma to a sheet plasma in a focus device because of the Rayleigh-Taylor instability. An initiation senario of plasma-linear is also proposed with a possible application of this concepts to the creation of a burning plasma in reversed field configurations, i.e., burning plasma vortex. (author)

  5. Understanding surveillance technologies spy devices, their origins & applications

    Petersen, JK

    2001-01-01

    From electronic wire taps to baby monitors and long-distance video and listening devices, startling changes occur everyday in how we gather, interpret, and transmit information. An extraordinary range of powerful new technologies has come into existence to meet the requirements of this expanding field.Your search for a comprehensive resource for surveillance devices is over. Understanding Surveillance Technologies: Spy Devices, Their Origins and Applications serves as a provocative, broad-based, and visually appealing reference that introduces and describes the technologies rapidly moving into

  6. Nanostructured Diamond Device for Biomedical Applications.

    Fijalkowski, M; Karczemska, A; Lysko, J M; Zybala, R; KozaneckI, M; Filipczak, P; Ralchenko, V; Walock, M; Stanishevsky, A; Mitura, S

    2015-02-01

    Diamond is increasingly used in biomedical applications because of its unique properties such as the highest thermal conductivity, good optical properties, high electrical breakdown voltage as well as excellent biocompatibility and chemical resistance. Diamond has also been introduced as an excellent substrate to make the functional microchip structures for electrophoresis, which is the most popular separation technique for the determination of analytes. In this investigation, a diamond electrophoretic chip was manufactured by a replica method using a silicon mold. A polycrystalline 300 micron-thick diamond layer was grown by the microwave plasma-assisted CVD (MPCVD) technique onto a patterned silicon substrate followed by the removal of the substrate. The geometry of microstructure, chemical composition, thermal and optical properties of the resulting free-standing diamond electrophoretic microchip structure were examined by CLSM, SFE, UV-Vis, Raman, XRD and X-ray Photoelectron Spectroscopy, and by a modified laser flash method for thermal property measurements.

  7. Shock Tube as an Impulsive Application Device

    Soumya Ranjan Nanda

    2017-01-01

    Full Text Available Current investigations solely focus on application of an impulse facility in diverse area of high-speed aerodynamics and structural mechanics. Shock tube, the fundamental impulse facility, is specially designed and calibrated for present objectives. Force measurement experiments are performed on a hemispherical test model integrated with the stress wave force balance. Similar test model is considered for heat transfer measurements using coaxial thermocouple. Force and heat transfer experiments demonstrated that the strain gauge and thermocouple have lag time of 11.5 and 9 microseconds, respectively. Response time of these sensors in measuring the peak load is also measured successfully using shock tube facility. As an outcome, these sensors are found to be suitable for impulse testing. Lastly, the response of aluminum plates subjected to impulsive loading is analyzed by measuring the in-plane strain produced during deformation. Thus, possibility of forming tests in shock is also confirmed.

  8. Applied optics fundamentals and device applications nano, MOEMS, and biotechnology

    Mentzer, Mark

    2011-01-01

    How does the field of optical engineering impact biotechnology? Perhaps for the first time, Applied Optics Fundamentals and Device Applications: Nano, MOEMS, and Biotechnology answers that question directly by integrating coverage of the many disciplines and applications involved in optical engineering, and then examining their applications in nanobiotechnology. Written by a senior U.S. Army research scientist and pioneer in the field of optical engineering, this book addresses the exponential growth in materials, applications, and cross-functional relevance of the many convergent disciplines

  9. Mild Conditions for Deuteration of Primary and Secondary Arylamines for the Synthesis of Deuterated Optoelectronic Organic Molecules

    Anwen M. Krause-Heuer

    2014-11-01

    Full Text Available Deuterated arylamines demonstrate great potential for use in optoelectronic devices, but their widespread utility requires a method for large-scale synthesis. The incorporation of these deuterated materials into optoelectronic devices also provides the opportunity for studies of the functioning device using neutron reflectometry based on the difference in the scattering length density between protonated and deuterated compounds. Here we report mild deuteration conditions utilising standard laboratory glassware for the deuteration of: diphenylamine, N-phenylnaphthylamine, N-phenyl-o-phenylenediamine and 1-naphthylamine (via H/D exchange in D2O at 80 °C, catalysed by Pt/C and Pd/C. These conditions were not successful in the deuteration of triphenylamine or N,N-dimethylaniline, suggesting that these mild conditions are not suitable for the deuteration of tertiary arylamines, but are likely to be applicable for the deuteration of other primary and secondary arylamines. The deuterated arylamines can then be used for synthesis of larger organic molecules or polymers with optoelectronic applications.

  10. Optoelectronic interconnects for 3D wafer stacks

    Ludwig, David; Carson, John C.; Lome, Louis S.

    1996-01-01

    Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

  11. Molecular beam epitaxy of GaAs nanowires and their sustainability for optoelectronic applications. Comparing Au- and self-assisted growth methods

    Breuer, Steffen

    2011-09-28

    In this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1 % is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.

  12. Colorimetric Characterization of Mobile Devices for Vision Applications.

    de Fez, Dolores; Luque, Maria José; García-Domene, Maria Carmen; Camps, Vicente; Piñero, David

    2016-01-01

    Available applications for vision testing in mobile devices usually do not include detailed setup instructions, sacrificing rigor to obtain portability and ease of use. In particular, colorimetric characterization processes are generally obviated. We show that different mobile devices differ also in colorimetric profile and that those differences limit the range of applications for which they are most adequate. The color reproduction characteristics of four mobile devices, two smartphones (Samsung Galaxy S4, iPhone 4s) and two tablets (Samsung Galaxy Tab 3, iPad 4), have been evaluated using two procedures: 3D LUT (Look Up Table) and a linear model assuming primary constancy and independence of the channels. The color reproduction errors have been computed with the CIEDE2000 color difference formula. There is good constancy of primaries but large deviations of additivity. The 3D LUT characterization yields smaller reproduction errors and dispersions for the Tab 3 and iPhone 4 devices, but for the iPad 4 and S4, both models are equally good. The smallest reproduction errors occur with both Apple devices, although the iPad 4 has the highest number of outliers of all devices with both colorimetric characterizations. Even though there is good constancy of primaries, the large deviations of additivity exhibited by the devices and the larger reproduction errors make any characterization based on channel independence not recommendable. The smartphone screens show, in average, the best color reproduction performance, particularly the iPhone 4, and therefore, they are more adequate for applications requiring precise color reproduction.

  13. Energy Device Applications of Synthesized 1D Polymer Nanomaterials.

    Huang, Long-Biao; Xu, Wei; Hao, Jianhua

    2017-11-01

    1D polymer nanomaterials as emerging materials, such as nanowires, nanotubes, and nanopillars, have attracted extensive attention in academia and industry. The distinctive, various, and tunable structures in the nanoscale of 1D polymer nanomaterials present nanointerfaces, high surface-to-volume ratio, and large surface area, which can improve the performance of energy devices. In this review, representative fabrication techniques of 1D polymer nanomaterials are summarized, including electrospinning, template-assisted, template-free, and inductively coupled plasma methods. The recent advancements of 1D polymer nanomaterials in energy device applications are demonstrated. Lastly, existing challenges and prospects of 1D polymer nanomaterials for energy device applications are presented. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Nanotechnology based devices and applications in medicine: An overview

    Elvis A Martis

    2012-01-01

    Full Text Available Nanotechnology has been the most explored and extensively studied area in recent times. Many devices which were earlier impossible to imagine, are being developed at a lightning speed with the application of nanotechnology. To overcome the challenges offered by the most dreaded diseases, such as cancer or any disease involving the central nervous system or other inaccessible areas of the human body, nanotechnology has been proved to be a boon in making the treatment more target specific and minimizing the toxicities. This review describes a handful of important devices and applications based on nanotechnology in medicine made in recent times. This article also describes in brief the regulatory concerns and the ethical issues pertaining to nanomedical devices.

  15. Multifunctional optoelectronic devices based on perovskites

    Saidaminov, Makhsud I.; Bakr, Osman

    2017-01-01

    Embodiments of the present disclosure provide methods of growing halide films (e.g., single crystal halide perovskites or multi-crystal halide perovskites) on a structure, dual-mode photodetectors, methods of use, and the like.

  16. Optoelectronic Devices Based on Novel Semiconductor Structures

    2006-06-14

    J. C. Pearson, C. Kadow, A. W. Jackson, and A. C. Gossard, Appl. Phys. Lett. 74, 2872 (1999). 11. F. Zernike , Jr., and P. R. Berman, Phys. Rev. Lett...G. Sun, and R. A. Soref, Appl. Phys. Lett. 78, 401 (2001). 8. F. Jr. Zernike and P. R. Berman, Phys. Rev. Lett. 15, 999 (1965). 9. K. Kawase, T...in successive InAs layers, resulting in a substantially wide miniband [1]. Such a large width manifests the quasi- 3D properties of the SL’s. On the

  17. Multifunctional optoelectronic devices based on perovskites

    Saidaminov, Makhsud I.

    2017-10-19

    Embodiments of the present disclosure provide methods of growing halide films (e.g., single crystal halide perovskites or multi-crystal halide perovskites) on a structure, dual-mode photodetectors, methods of use, and the like.

  18. Optoelectronic Devices Based on Novel Semiconductor Structures

    Ding, Yujie

    1997-01-01

    .... We have set up a state-of-the-art nonlinear optics lab. We have systematically investigated spatially-localized band-gap renormalization and band-filling effects, photoluminescence saturation due to interface traps, and tunneling of heavy holes...

  19. Integrated optoelectronic materials and circuits for optical interconnects

    Hutcheson, L.D.

    1988-01-01

    Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected

  20. GPU-based Parallel Application Design for Emerging Mobile Devices

    Gupta, Kshitij

    A revolution is underway in the computing world that is causing a fundamental paradigm shift in device capabilities and form-factor, with a move from well-established legacy desktop/laptop computers to mobile devices in varying sizes and shapes. Amongst all the tasks these devices must support, graphics has emerged as the 'killer app' for providing a fluid user interface and high-fidelity game rendering, effectively making the graphics processor (GPU) one of the key components in (present and future) mobile systems. By utilizing the GPU as a general-purpose parallel processor, this dissertation explores the GPU computing design space from an applications standpoint, in the mobile context, by focusing on key challenges presented by these devices---limited compute, memory bandwidth, and stringent power consumption requirements---while improving the overall application efficiency of the increasingly important speech recognition workload for mobile user interaction. We broadly partition trends in GPU computing into four major categories. We analyze hardware and programming model limitations in current-generation GPUs and detail an alternate programming style called Persistent Threads, identify four use case patterns, and propose minimal modifications that would be required for extending native support. We show how by manually extracting data locality and altering the speech recognition pipeline, we are able to achieve significant savings in memory bandwidth while simultaneously reducing the compute burden on GPU-like parallel processors. As we foresee GPU computing to evolve from its current 'co-processor' model into an independent 'applications processor' that is capable of executing complex work independently, we create an alternate application framework that enables the GPU to handle all control-flow dependencies autonomously at run-time while minimizing host involvement to just issuing commands, that facilitates an efficient application implementation. Finally, as

  1. Toward high-resolution optoelectronic retinal prosthesis

    Palanker, Daniel; Huie, Philip; Vankov, Alexander; Asher, Alon; Baccus, Steven

    2005-04-01

    It has been already demonstrated that electrical stimulation of retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. Current retinal implants provide very low resolution (just a few electrodes), while several thousand pixels are required for functional restoration of sight. We present a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array with pixel density up to 2,500 pix/mm2 (geometrically corresponding to a visual acuity of 20/80), and allows for natural eye scanning rather than scanning with a head-mounted camera. The system operates similarly to "virtual reality" imaging devices used in military and medical applications. An image from a video camera is projected by a goggle-mounted infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. Such a system provides a broad field of vision by allowing for natural eye scanning. The goggles are transparent to visible light, thus allowing for simultaneous utilization of remaining natural vision along with prosthetic stimulation. Optical control of the implant allows for simple adjustment of image processing algorithms and for learning. A major prerequisite for high resolution stimulation is the proximity of neural cells to the stimulation sites. This can be achieved with sub-retinal implants constructed in a manner that directs migration of retinal cells to target areas. Two basic implant geometries are described: perforated membranes and protruding electrode arrays. Possibility of the tactile neural stimulation is also examined.

  2. Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

    Bing Huang

    2014-05-01

    Full Text Available Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double-sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

  3. Integrated optics and optoelectronics II; Proceedings of the Meeting, San Jose, CA, Sept. 17-19, 1990

    Wong, Ka-Kha

    1991-01-01

    The present volume on integrated optics and optoelectronics discusses proton- and ion-exchange technologies, radiation effects on GaAs optical system FET devices and on the dynamical behavior of LiNbO3 switching devices, advanced lightwave components and concepts, advanced optical interconnects concepts, advanced aircraft and engine control, IOCs for fiber-optic gyroscopes, and commercial integrated optical devices. Attention is given to integrated optical devices for high-data-rate serial-to-parallel conversion, the design of novel integrated optic devices using depressed index waveguides, and a low-loss L-band microwave fiber-optic link for control of a T/R module. Topics addressed include the temperature and modulation dependence of spectral linewidth in distributed Bragg reflector laser diodes, length-minimization design considerations in photonic integrated circuits incorporating directional couplers, and the photochemical formation of polymeric optical waveguides and devices for optical interconnection applications

  4. Application of Nanostructures in Electrochromic Materials and Devices: Recent Progress

    Jin Min Wang

    2010-11-01

    Full Text Available The recent progress in application of nanostructures in electrochromic materials and devices is reviewed. ZnO nanowire array modified by viologen and WO3, crystalline WO3 nanoparticles and nanorods, mesoporous WO3 and TiO2, poly(3,4-ethylenedioxythiophene nanotubes, Prussian blue nanoinks and nanostructures in switchable mirrors are reviewed. The electrochromic properties were significantly enhanced by applying nanostructures, resulting in faster switching responses, higher stability and higher optical contrast. A perspective on the development trends in electrochromic materials and devices is also proposed.

  5. Wood-Derived Materials for Green Electronics, Biological Devices, and Energy Applications.

    Zhu, Hongli; Luo, Wei; Ciesielski, Peter N; Fang, Zhiqiang; Zhu, J Y; Henriksson, Gunnar; Himmel, Michael E; Hu, Liangbing

    2016-08-24

    With the arising of global climate change and resource shortage, in recent years, increased attention has been paid to environmentally friendly materials. Trees are sustainable and renewable materials, which give us shelter and oxygen and remove carbon dioxide from the atmosphere. Trees are a primary resource that human society depends upon every day, for example, homes, heating, furniture, and aircraft. Wood from trees gives us paper, cardboard, and medical supplies, thus impacting our homes, school, work, and play. All of the above-mentioned applications have been well developed over the past thousands of years. However, trees and wood have much more to offer us as advanced materials, impacting emerging high-tech fields, such as bioengineering, flexible electronics, and clean energy. Wood naturally has a hierarchical structure, composed of well-oriented microfibers and tracheids for water, ion, and oxygen transportation during metabolism. At higher magnification, the walls of fiber cells have an interesting morphology-a distinctly mesoporous structure. Moreover, the walls of fiber cells are composed of thousands of fibers (or macrofibrils) oriented in a similar angle. Nanofibrils and nanocrystals can be further liberated from macrofibrils by mechanical, chemical, and enzymatic methods. The obtained nanocellulose has unique optical, mechanical, and barrier properties and is an excellent candidate for chemical modification and reconfiguration. Wood is naturally a composite material, comprised of cellulose, hemicellulose, and lignin. Wood is sustainable, earth abundant, strong, biodegradable, biocompatible, and chemically accessible for modification; more importantly, multiscale natural fibers from wood have unique optical properties applicable to different kinds of optoelectronics and photonic devices. Today, the materials derived from wood are ready to be explored for applications in new technology areas, such as electronics, biomedical devices, and energy. The

  6. Wood-Derived Materials for Green Electronics, Biological Devices, and Energy Applications

    Zhu, Hongli; Luo, Wei; Ciesielski, Peter N.; Fang, Zhiqiang; Zhu, J. Y.; Henriksson, Gunnar; Himmel, Michael E.; Hu, Liangbing

    2016-08-24

    With the arising of global climate change and resource shortage, in recent years, increased attention has been paid to environmentally friendly materials. Trees are sustainable and renewable materials, which give us shelter and oxygen and remove carbon dioxide from the atmosphere. Trees are a primary resource that human society depends upon every day, for example, homes, heating, furniture, and aircraft. Wood from trees gives us paper, cardboard, and medical supplies, thus impacting our homes, school, work, and play. All of the above-mentioned applications have been well developed over the past thousands of years. However, trees and wood have much more to offer us as advanced materials, impacting emerging high-tech fields, such as bioengineering, flexible electronics, and clean energy. Wood naturally has a hierarchical structure, composed of well-oriented microfibers and tracheids for water, ion, and oxygen transportation during metabolism. At higher magnification, the walls of fiber cells have an interesting morphology--a distinctly mesoporous structure. Moreover, the walls of fiber cells are composed of thousands of fibers (or macrofibrils) oriented in a similar angle. Nanofibrils and nanocrystals can be further liberated from macrofibrils by mechanical, chemical, and enzymatic methods. The obtained nanocellulose has unique optical, mechanical, and barrier properties and is an excellent candidate for chemical modification and reconfiguration. Wood is naturally a composite material, comprised of cellulose, hemicellulose, and lignin. Wood is sustainable, earth abundant, strong, biodegradable, biocompatible, and chemically accessible for modification; more importantly, multiscale natural fibers from wood have unique optical properties applicable to different kinds of optoelectronics and photonic devices. Today, the materials derived from wood are ready to be explored for applications in new technology areas, such as electronics, biomedical devices, and energy. The

  7. Growth, spectral, optical, laser damage threshold and DFT investigations on 2-amino 4-methyl pyridinium 4-methoxy benzoate (2A4MP4MB): A potential organic third order nonlinear optical material for optoelectronic applications

    Krishnakumar, M.; Karthick, S.; Thirupugalmani, K.; Babu, B.; Vinitha, G.

    2018-05-01

    In present investigation, single crystals of organic charge transfer complex, 2-amino-4-methyl pyridinium-4-methoxy benzoate (2A4MP4MB) was grown by controlled slow evaporation solution growth technique using methanol as a solvent at room temperature. Single crystal XRD analysis confirmed the crystal system and lattice parameters of 2A4MP4MB. The crystalline nature, presence of various vibrational modes and other chemical bonds in the compound have been recognized and confirmed by powder X-ray diffraction, FT-IR and FT-Raman spectroscopic techniques respectively. The presence of various proton and carbon positions in title compound was confirmed using 1H NMR and 13C NMR spectral studies. The wide optical operating window and cut-off wavelength were identified and band gap value of the title compound was calculated using UV-vis-NIR study. The specific heat capacity (cp) values of the title compound, 1.712 J g-1·K-1 at 300 K and 13.6 J g-1 K-1 at 433 K (melting point) were measured using Modulated Differential Scanning Calorimetric studies (MDSC). From Z-scan study, nonlinear refractive index (n2), nonlinear absorption (β) and third order nonlinear susceptibility (χ(3)) values were determined. The self-defocusing effect and saturable absorption behavior of the material were utilized to exhibit the optical limiting action at λ = 532 nm by employing the same continuous wave (cw) Nd: YAG laser source. The laser damage threshold (LDT) study of title compound was carried out using Nd: YAG laser of 532 nm wavelength. The Vickers' micro hardness test was carried out at room temperature and obtained results were investigated using classical Meyer's law. In addition, DFT calculations were carried out for the first time for this compound. These characterization studies performed on the title compound planned to probe the valuable and safe region of optical, thermal and mechanical properties to improve efficacy of 2A4MP4MB single crystals in optoelectronic device

  8. Alignment technology and applications of liquid crystal devices

    Takatoh, Kohki; Hasegawa, Ray; Koden, Mitsushiro; Itoh, Nobuyuki; Hasegawa, Masaki

    2005-01-01

    Alignment phenomena are characteristic of liquid crystalline materials, and understanding them is critically important in understanding the essential features and behavior of liquid crystals and the performance of Liquid Crystal Devices (LCDs). Furthermore, in LCD production lines, the alignment process is of practical importance. Alignment Technologies and Applications of Liquid Crystal Devices demonstrates both the fundamental and practical aspects of alignment phenomena in liquid crystals. The physical basis of alignment phenomena is first introduced in order to aid the understanding of the various physical phenomena observed in the interface between liquid crystalline materials and alignment layer surfaces. Methods for the characterization of surfaces, which induce the alignment phenomena, and of the alignment layer itself are introduced. These methods are useful for the research of liquid crystalline materials and devices in academic research as well as in industry. In the practical sections, the alignme...

  9. Performance of a transmutation advanced device for sustainable energy application

    Garcia, C.; Rosales, J.; Garcia, L. [Instituto Superior de Tecnologias y Ciencias Aplicadas (INSTEC), La Habana (Cuba); Perez-Navarro, A.; Escriva, A. [Universidad Politecnica de Valencia, Valencia (Spain). Inst. de Ingenieria Energetica; Abanades, A. [Universidad Politecnica de Madrid (Spain). Grupo de Modelizacion de Sistemas Termoenergeticos

    2009-07-01

    Preliminary studies have been performed to design a device for nuclear waste transmutation and hydrogen generation based on a gas cooled pebble bed accelerator driven system, TADSEA (transmutation advanced device for sustainable energy application). In previous studies we have addressed the viability of an ADS Transmutation device that uses as fuel wastes from the existing LWR power plants, encapsulated in graphite in the form of pebble beds, being cooled by helium which enables high temperatures, in the order of 1200 K, to facilitate hydrogen generation from water either by high temperature electrolysis or by thermo chemical cycles. To design this device several configurations were studied, including several reactors thickness, to achieve the desired parameters, the transmutation of nuclear waste and the production of 100 MW. of thermal power. In this paper we are presenting new studies performed on deep burn in-core fuel management strategy for LWR waste. We analyze the fuel cycle on TADSEA device based on driver and transmutation fuel that were proposed for the General Atomic design of a gas turbine-modular helium reactor. We compare the transmutation results of the three fuel management strategies, using driven and transmutation, and standard LWR spend fuel, and present several parameters that describe the neutron performance of TADSEA nuclear core as the fuel and moderator temperature reactivity coefficients and transmutation chain. (author)

  10. Performance of a transmutation advanced device for sustainable energy application

    Garcia, C.; Rosales, J.; Garcia, L.; Perez-Navarro, A.; Escriva, A.; Abanades, A.

    2009-01-01

    Preliminary studies have been performed to design a device for nuclear waste transmutation and hydrogen generation based on a gas cooled pebble bed accelerator driven system, TADSEA (transmutation advanced device for sustainable energy application). In previous studies we have addressed the viability of an ADS Transmutation device that uses as fuel wastes from the existing LWR power plants, encapsulated in graphite in the form of pebble beds, being cooled by helium which enables high temperatures, in the order of 1200 K, to facilitate hydrogen generation from water either by high temperature electrolysis or by thermo chemical cycles. To design this device several configurations were studied, including several reactors thickness, to achieve the desired parameters, the transmutation of nuclear waste and the production of 100 MW. of thermal power. In this paper we are presenting new studies performed on deep burn in-core fuel management strategy for LWR waste. We analyze the fuel cycle on TADSEA device based on driver and transmutation fuel that were proposed for the General Atomic design of a gas turbine-modular helium reactor. We compare the transmutation results of the three fuel management strategies, using driven and transmutation, and standard LWR spend fuel, and present several parameters that describe the neutron performance of TADSEA nuclear core as the fuel and moderator temperature reactivity coefficients and transmutation chain. (author)

  11. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

    Lijuan Wang

    2017-02-01

    Full Text Available Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

  12. Acoustofluidics 14: Applications of acoustic streaming in microfluidic devices.

    Wiklund, Martin; Green, Roy; Ohlin, Mathias

    2012-07-21

    In part 14 of the tutorial series "Acoustofluidics--exploiting ultrasonic standing wave forces and acoustic streaming in microfluidic systems for cell and particle manipulation", we provide a qualitative description of acoustic streaming and review its applications in lab-on-a-chip devices. The paper covers boundary layer driven streaming, including Schlichting and Rayleigh streaming, Eckart streaming in the bulk fluid, cavitation microstreaming and surface-acoustic-wave-driven streaming.

  13. A Comparative Study of Spreadsheet Applications on Mobile Devices

    Veera V. S. M. Chintapalli

    2016-01-01

    Full Text Available Advances in mobile screen sizes and feature enhancement for mobile applications have increased the number of users accessing spreadsheets on mobile devices. This paper reports a comparative usability study on four popular mobile spreadsheet applications: OfficeSuite Viewer 6, Documents To Go, ThinkFree Online, and Google Drive. We compare them against three categories of usability criteria: visibility; navigation, scrolling, and feedback; and interaction, satisfaction, simplicity, and convenience. Measures for each criterion were derived in a survey. Questionnaires were designed to address the measures based on the comparative criteria provided in the analysis.

  14. High bandgap III-V alloys for high efficiency optoelectronics

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  15. Implantable optoelectronic probes for in vivo optogenetics

    Iseri, Ege; Kuzum, Duygu

    2017-06-01

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  16. Pressure-Application Device for Testing Pressure Sensors

    2002-01-01

    A portable pressure-application device has been designed and built for use in testing and calibrating piezoelectric pressure transducers in the field. The device generates pressure pulses of known amplitude. A pressure pulse (in contradistinction to a steady pressure) is needed because in the presence of a steady pressure, the electrical output of a piezoelectric pressure transducer decays rapidly with time. The device includes a stainless- steel compressed-air-storage cylinder of 500 cu cm volume. A manual hand pump with check valves and a pressure gauge are located at one end of the cylinder. A three-way solenoid valve that controls the release of pressurized air is located at the other end of the cylinder. Power for the device is provided by a 3.7-V cordless-telephone battery. The valve is controlled by means of a pushbutton switch, which activates a 5 V to +/-15 V DC-to-DC converter that powers the solenoid. The outlet of the solenoid valve is connected to the pressure transducer to be tested. Before the solenoid is energized, the transducer to be tested is at atmospheric pressure. When the solenoid is actuated by the push button, pressurized air from inside the cylinder is applied to the transducer. Once the pushbutton is released, the cylinder pressure is removed from the transducer and the pressurized air applied to the transducer is vented, bringing the transducer back to atmospheric pressure. Before this device was used for actual calibration, its accuracy was checked with a NIST (National Institute of Standards and Technology) traceable calibrator and commercially calibrated pressure transducers. This work was done by Wanda Solano of Stennis Space Center and Greg Richardson of Lockheed Martin Corp.

  17. Applications of Si/SiGe heterostructures to CMOS devices

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  18. Nanoscale Copper and Copper Compounds for Advanced Device Applications

    Chen, Lih-Juann

    2016-12-01

    Copper has been in use for at least 10,000 years. Copper alloys, such as bronze and brass, have played important roles in advancing civilization in human history. Bronze artifacts date at least 6500 years. On the other hand, discovery of intriguing properties and new applications in contemporary technology for copper and its compounds, particularly on nanoscale, have continued. In this paper, examples for the applications of Cu and Cu alloys for advanced device applications will be given on Cu metallization in microelectronics devices, Cu nanobats as field emitters, Cu2S nanowire array as high-rate capability and high-capacity cathodes for lithium-ion batteries, Cu-Te nanostructures for field-effect transistor, Cu3Si nanowires as high-performance field emitters and efficient anti-reflective layers, single-crystal Cu(In,Ga)Se2 nanotip arrays for high-efficiency solar cell, multilevel Cu2S resistive memory, superlattice Cu2S-Ag2S heterojunction diodes, and facet-dependent Cu2O diode.

  19. Current and Perspective Applications of Dense Plasma Focus Devices

    Gribkov, V. A.

    2008-04-01

    Dense Plasma Focus (DPF) devices' applications, which are intended to support the main-stream large-scale nuclear fusion programs (NFP) from one side (both in fundamental problems of Dense Magnetized Plasma physics and in its engineering issues) as well as elaborated for an immediate use in a number of fields from the other one, are described. In the first direction such problems as self-generated magnetic fields, implosion stability of plasma shells having a high aspect ratio, etc. are important for the Inertial Confinement Fusion (ICF) programs (e.g. as NIF), whereas different problems of current disruption phenomenon, plasma turbulence, mechanisms of generation of fast particles and neutrons in magnetized plasmas are of great interest for the large devices of the Magnetic Plasma Confinement—MPC (e.g. as ITER). In a sphere of the engineering problems of NFP it is shown that in particular the radiation material sciences have DPF as a very efficient tool for radiation tests of prospect materials and for improvement of their characteristics. In the field of broad-band current applications some results obtained in the fields of radiation material sciences, radiobiology, nuclear medicine, express Neutron Activation Analysis (including a single-shot interrogation of hidden illegal objects), dynamic non-destructive quality control, X-Ray microlithography and micromachining, and micro-radiography are presented. As the examples of the potential future applications it is proposed to use DPF as a powerful high-flux neutron source to generate very powerful pulses of neutrons in the nanosecond (ns) range of its duration for innovative experiments in nuclear physics, for the goals of radiation treatment of malignant tumors, for neutron tests of materials of the first wall, blankets and NFP device's constructions (with fluences up to 1 dpa per a year term), and ns pulses of fast electrons, neutrons and hard X-Rays for brachytherapy.

  20. Current and Perspective Applications of Dense Plasma Focus Devices

    Gribkov, V. A.

    2008-01-01

    Dense Plasma Focus (DPF) devices' applications, which are intended to support the main-stream large-scale nuclear fusion programs (NFP) from one side (both in fundamental problems of Dense Magnetized Plasma physics and in its engineering issues) as well as elaborated for an immediate use in a number of fields from the other one, are described. In the first direction such problems as self-generated magnetic fields, implosion stability of plasma shells having a high aspect ratio, etc. are important for the Inertial Confinement Fusion (ICF) programs (e.g. as NIF), whereas different problems of current disruption phenomenon, plasma turbulence, mechanisms of generation of fast particles and neutrons in magnetized plasmas are of great interest for the large devices of the Magnetic Plasma Confinement--MPC (e.g. as ITER). In a sphere of the engineering problems of NFP it is shown that in particular the radiation material sciences have DPF as a very efficient tool for radiation tests of prospect materials and for improvement of their characteristics. In the field of broad-band current applications some results obtained in the fields of radiation material sciences, radiobiology, nuclear medicine, express Neutron Activation Analysis (including a single-shot interrogation of hidden illegal objects), dynamic non-destructive quality control, X-Ray microlithography and micromachining, and micro-radiography are presented. As the examples of the potential future applications it is proposed to use DPF as a powerful high-flux neutron source to generate very powerful pulses of neutrons in the nanosecond (ns) range of its duration for innovative experiments in nuclear physics, for the goals of radiation treatment of malignant tumors, for neutron tests of materials of the first wall, blankets and NFP device's constructions (with fluences up to 1 dpa per a year term), and ns pulses of fast electrons, neutrons and hard X-Rays for brachytherapy

  1. Smart Optoelectronic Sensors and Intelligent Sensor Systems

    Sergey Y. YURISH

    2012-03-01

    Full Text Available Light-to-frequency converters are widely used in various optoelectronic sensor systems. However, a further frequency-to-digital conversion is a bottleneck in such systems due to a broad frequency range of light-to-frequency converters’ outputs. This paper describes an effective OEM design approach, which can be used for smart and intelligent sensor systems design. The design is based on novel, multifunctional integrated circuit of Universal Sensors & Transducers Interface especially designed for such sensor applications. Experimental results have confirmed an efficiency of this approach and high metrological performances.

  2. Optoelectronic and Photovoltaic Properties of the Air-Stable Organohalide Semiconductor (CH 3 NH 3 ) 3 Bi 2 I 9

    Abulikemu, Mutalifu

    2016-07-14

    Lead halide perovskite materials have shown excellent optoelectronic as well as photovoltaic properties. However, the presence of lead and the chemical instability relegate lead halide perovskites to research applications only. Here, we investigate an emerging lead-free and air stable compound (CH3NH3)3Bi2I9 as a non-toxic potential alternative to lead halide perovskites. We have synthesized thin films, powders and millimeter-scale single crystals of (CH3NH3)3Bi2I9 and investigated their structural and optoelectronic properties. We demonstrate that the degree of crystallinity strongly affects the optoelectronic properties of the material, resulting in significantly different band gaps in polycrystalline thin films and single crystals. Surface photovoltage spectroscopy reveals outstanding photocharge generation in the visible (<700 nm), while transient absorption spectroscopy and space charge limited current measurements point to a long exciton lifetime and a high carrier mobility, respectively, similar to lead halide perovskites, pointing to the remarkable potential of this semiconductor. Photovoltaic devices fabricated using this material yield low power conversion efficiency (PCE) to date, but the PCE is expected to rise with improvements in thin film processing and device engineering.

  3. Ultrafast Graphene Photonics and Optoelectronics

    2017-04-14

    AFRL-AFOSR-JP-TR-2017-0032 Ultrafast Graphene Photonics and Optoelectronics Kuang-Hsiung Wu National Chiao Tung University Final Report 04/14/2017...DATES COVERED (From - To) 18 Apr 2013 to 17 Apr 2016 4. TITLE AND SUBTITLE Ultrafast Graphene Photonics and Optoelectronics 5a.  CONTRACT NUMBER 5b...Prescribed by ANSI Std. Z39.18 Final Report for AOARD Grant FA2386-13-1-4022 “Ultrafast Graphene Photonics and Optoelectronics” Date May 23th, 2016

  4. Organic structures design applications in optical and electronic devices

    Chow, Tahsin J

    2014-01-01

    ""Presenting an overview of the syntheses and properties of organic molecules and their applications in optical and electronic devices, this book covers aspects concerning theoretical modeling for electron transfer, solution-processed micro- and nanomaterials, donor-acceptor cyclophanes, molecular motors, organogels, polyazaacenes, fluorogenic sensors based on calix[4]arenes, and organic light-emitting diodes. The publication of this book is timely because these topics have become very popular nowadays. The book is definitely an excellent reference for scientists working in these a

  5. Fundamentals of silicon carbide technology growth, characterization, devices and applications

    Kimoto, Tsunenobu

    2014-01-01

    A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicationsBased on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.  The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls.  SiC power MOSFETs entered commercial production in 2011, providing rugged, hig

  6. Wide gap semiconductor microwave devices

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  7. Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.

    Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng

    2017-12-28

    The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.

  8. Fundamentals and applications of organic electrochemistry synthesis, materials, devices

    Fuchigami, Toshio; Inagi, Shinsuke

    2014-01-01

    This textbook is an accessible overview of the broad field of organic electrochemistry, covering the fundamentals and applications of contemporary organic electrochemistry.  The book begins with an introduction to the fundamental aspects of electrode electron transfer and methods for the electrochemical measurement of organic molecules. It then goes on to discuss organic electrosynthesis of molecules and macromolecules, including detailed experimental information for the electrochemical synthesis of organic compounds and conducting polymers. Later chapters highlight new methodology for organic electrochemical synthesis, for example electrolysis in ionic liquids, the application to organic electronic devices such as solar cells and LEDs, and examples of commercialized organic electrode processes. Appendices present useful supplementary information including experimental examples of organic electrosynthesis, and tables of physical data (redox potentials of various organic solvents and organic compounds and phy...

  9. Optoelectronic switch matrix as a look-up table for residue arithmetic.

    Macdonald, R I

    1987-10-01

    The use of optoelectronic matrix switches to perform look-up table functions in residue arithmetic processors is proposed. In this application, switchable detector arrays give the advantage of a greatly reduced requirement for optical sources by comparison with previous optoelectronic residue processors.

  10. Flexible organic electronic devices: Materials, process and applications

    Logothetidis, Stergios

    2008-01-01

    The research for the development of flexible organic electronic devices (FEDs) is rapidly increasing worldwide, since FEDs will change radically several aspects of everyday life. Although there has been considerable progress in the area of flexible inorganic devices (a-Si or solution processed Si), there are numerous advances in the organic (semiconducting, conducting and insulating), inorganic and hybrid (organic-inorganic) materials that exhibit customized properties and stability, and in the synthesis and preparation methods, which are characterized by a significant amount of multidisciplinary efforts. Furthermore, the development and encapsulation of organic electronic devices onto flexible polymeric substrates by large-scale and low-cost roll-to-roll production processes will allow their market implementation in numerous application areas, including displays, lighting, photovoltaics, radio-frequency identification circuitry and chemical sensors, as well as to a new generation of modern exotic applications. In this work, we report on some of the latest advances in the fields of polymeric substrates, hybrid barrier layers, inorganic and organic materials to be used as novel active and functional thin films and nanomaterials as well as for the encapsulation of the materials components for the production of FEDs (flexible organic light-emitting diodes, and organic photovoltaics). Moreover, we will emphasize on the real-time optical monitoring and characterization of the growing films onto the flexible polymeric substrates by spectroscopic ellipsometry methods. Finally, the potentiality for the in-line characterization processes for the development of organic electronics materials will be emphasized, since it will also establish the framework for the achievement of the future scientific and technological breakthroughs

  11. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  12. Flexible Synthetic Semiconductor Applied in Optoelectronic Organic Sensor

    Andre F. S. Guedes

    2017-06-01

    Full Text Available The synthesis and application of new nanostructured organic materials, for the development of technology based on organic devices, have taken great interest from the scientific community. The greatest interest in studying organic semiconductor materials has been connected to its already known potential applications, such as: batteries, organic solar cells, flexible organic solar cells, organic light emitting diodes, organic sensors and others. Phototherapy makes use of different radiation sources, and the treatment of hyperbilirubinemia the most common therapeutic intervention occurs in the neonatal period. In this work we developed an organic optoelectronic sensor capable of detecting and determining the radiation dose rate emitted by the radiation source of neonatal phototherapy equipment. The sensors were developed using optically transparent substrate with Nanostructured thin film layers of Poly(9-Vinylcarbazole covered by a layer of Poly(P-Phenylene Vinylene. The samples were characterized by UV-Vis Spectroscopy, Electrical Measurements and SEM. With the results obtained from this study can be developed dosimeters organics to the neonatal phototherapy equipment.

  13. Thickness, morphology, and optoelectronic characteristics of pristine and surfactant-modified DNA thin films

    Arasu, Velu; Reddy Dugasani, Sreekantha; Son, Junyoung; Gnapareddy, Bramaramba; Ha Park, Sung; Jeon, Sohee; Jeong, Jun-Ho

    2017-01-01

    Although the preparation of DNA thin films with well-defined thicknesses controlled by simple physical parameters is crucial for constructing efficient, stable, and reliable DNA-based optoelectronic devices and sensors, it has not been comprehensively studied yet. Here, we construct DNA and surfactant-modified DNA thin films by drop-casting and spin-coating techniques. The DNA thin films formed with different control parameters, such as drop-volume and spin-speed at given DNA concentrations, exhibit characteristic thickness, surface roughness, surface potential, and absorbance, which are measured by a field emission scanning electron microscope, a surface profilometer, an ellipsometer, an atomic force microscope, a Kelvin probe force microscope, and an UV–visible spectroscope. From the observations, we realized that thickness significantly affects the physical properties of DNA thin films. This comprehensive study of thickness-dependent characteristics of DNA and surfactant-modified DNA thin films provides insight into the choice of fabrication techniques in order for the DNA thin films to have desired physical characteristics in further applications, such as optoelectronic devices and sensors. (paper)

  14. Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

    Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

    2010-07-15

    Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  15. Feedback about Astronomical Application Developments for Mobile Devices

    Schaaff, A.; Boch, T.; Fernique, P.; Houpin, R.; Kaestlé, V.; Royer, M.; Scheffmann, J.; Weiler, A.

    2013-10-01

    Within a few years, Smartphones have become the standard for mobile telephony, and we are now witnessing a rapid development of Internet tablets. These mobile devices have enough powerful hardware features to run more and more complex applications. In the field of astronomy it is not only possible to use these tools to access data via a simple browser, but also to develop native applications reusing libraries (Java for Android, Objective-C for iOS) developed for desktops. We have been working for two years on mobile application development and we now have the skills in native iOS and Android development, Web development (especially HTML5, JavaScript, CSS3) and conversion tools (PhoneGap) from Web development to native applications. The biggest change comes from human/computer interaction that is radically changed by the use of multitouch. This interaction requires a redesign of interfaces to take advantage of new features (simultaneous selections in different parts of the screen, etc.). In the case of native applications, the distribution is usually done through online stores (App Store, Google Play, etc.) which gives visibility to a wider audience. Our approach is not only to perform testing of materials and developing of prototypes, but also operational applications. The native application development is costly in development time, but the possibilities are broader because it is possible to use native hardware such as the gyroscope and the accelerometer, to point out an object in the sky. Development depends on the Web browser and the rendering and performance are often very different between different browsers. It is also possible to convert Web developments to native applications, but currently it is better to restrict this possibility to light applications in terms of functionality. Developments in HTML5 are promising but are far behind those available on desktops. HTML5 has the advantage of allowing development independent from the evolution of the mobile

  16. Practical opto-electronics an illustrated guide for the laboratory

    Protopopov, Vladimir

    2014-01-01

    This book explains how to create opto-electronic systems in a most efficient way, avoiding typical mistakes. It covers light detection techniques, imaging, interferometry, spectroscopy, modulation-demodulation, heterodyning, beam steering, and many other topics common to laboratory applications. The focus is made on self-explanatory figures rather than on words. The book guides the reader through the entire process of creating problem-specific opto-electronic systems, starting from optical source, through beam transportation optical arrangement, to photodetector and data acquisition system. The relevant basics of beam propagation and computer-based raytracing routines are also explained, and sample codes are listed. the book teaches important know-how and practical tricks that are never disclosed in scientific publications.  The book can become the reader's personal adviser in the world of opto-electronics and navigator in the ocean of the market of optical components and systems. Succinct, well-illustrate...

  17. Telemedicine optoelectronic biomedical data processing system

    Prosolovska, Vita V.

    2010-08-01

    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  18. Indium antimonide quantum well structures for electronic device applications

    Edirisooriya, Madhavie

    The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth

  19. Low resistance splices for HTS devices and applications

    Lalitha, S. L.

    2017-09-01

    This paper discusses the preparation methodology and performance evaluation of low resistance splices made of the second generation (2G) high-temperature superconductor (HTS). These splices are required in a broad spectrum of HTS devices including a large aperture, high-field solenoid built in the laboratory to demonstrate a superconducting magnetic energy storage (SMES) device. Several pancake coils are assembled in the form of a nested solenoid, and each coil requires a hundred meters or more of 2G (RE)BCO tape. However, commercial availability of this superconductor with a very uniform physical properties is currently limited to shorter piece lengths. This necessitates us having splices to inter-connect the tape pieces within a pancake coil, between adjacent pancake coils, and to attach HTS current leads to the magnet assembly. As a part of the optimization and qualification of splicing process, a systematic study was undertaken to analyze the electrical performance of splices in two different configurations suitable for this magnet assembly: lap joint and spiral joint. The electrical performance is quantified in terms of the resistance of splices estimated from the current-voltage characteristics. It has been demonstrated that a careful application of this splicing technique can generate lap joints with resistance less than 1 nΩ at 77 K.

  20. Use of mobile device applications in Canadian dietetic practice.

    Lieffers, Jessica R L; Vance, Vivienne A; Hanning, Rhona M

    2014-01-01

    A cross-sectional web-based survey of dietitians was used to explore topics related to mobile devices and their applications (apps) in Canadian dietetic practice. A survey was drafted, posted on SurveyMonkey, and pretested with dietitians and dietetic interns. Dietitians of Canada (DC), a supporter of this work, promoted the survey to members through its monthly electronic newsletters from January 2012 to April 2012. Of 139 dietitians who answered some survey questions, 118 finished the survey; this represents a response rate of approximately 3%. Overall, 57.3% of respondents reported app use in practice, and 54.2% had a client ask about or use a nutrition/food app. About 40.5% of respondents had recommended nutrition/food apps to clients. Respondents were enthusiastic about apps, but many described challenges with use. From the survey data, three themes emerged that can affect dietitians' use of apps and whether they recommend apps to clients: mobile device and app factors (access to information/tools, content quality, usability, accessibility/compatibility, and cost), personal factors (knowledge, interest, suitability, and willingness/ability to pay), and workplace factors. Apps are now infiltrating dietetic practice. Several factors can affect dietitians' use of apps and whether they recommend them to clients. These findings will help guide future development and use of apps in practice.

  1. Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates

    Byun, Kwangsub; Cho, Kyoungah; Kim, Sangsig

    2010-01-01

    The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.

  2. Waterproof stretchable optoelectronics

    Rogers, John A.; Kim, Rak-Hwan; Kim, Dae-Hyeong; Kaplan, David L.; Omenetto, Fiorenzo G.

    2018-04-03

    Described herein are flexible and stretchable LED arrays and methods utilizing flexible and stretchable LED arrays. Assembly of flexible LED arrays alongside flexible plasmonic crystals is useful for construction of fluid monitors, permitting sensitive detection of fluid refractive index and composition. Co-integration of flexible LED arrays with flexible photodetector arrays is useful for construction of flexible proximity sensors. Application of stretchable LED arrays onto flexible threads as light emitting sutures provides novel means for performing radiation therapy on wounds.

  3. Preparation, characterization and optoelectronic properties of nanodiamonds doped zinc oxide nanomaterials by a ball milling technique

    Ullah, Hameed; Sohail, Muhammad; Malik, Uzma; Ali, Naveed; Bangash, Masroor Ahmad; Nawaz, Mohsan

    2016-07-01

    Zinc oxide (ZnO) is one of the very important metal oxides (MOs) for applications in optoelectronic devices which work in the blue and UV regions. However, to meet the challenges of obtaining ZnO nanomaterials suitable for practical applications, various modifications in physico-chemical properties are highly desirable. One of the ways adopted for altering the properties is to synthesize composite(s) of ZnO with various reinforcements. Here we report on the tuning of optoelectronic properties of ZnO upon doping by nanodiamonds (NDs) using the ball milling technique. A varying weight percent (wt.%) of NDs were ball milled for 2 h with ZnO nanoparticles prepared by a simple precipitation method. The effects of different parameters, the calcination temperature of ZnO, wt.% of NDs and mechanical milling upon the optoelectronic properties of the resulting ZnO-NDs nanocomposites have been investigated. The ZnO-NDs nanocomposites were characterized by IR spectroscopy, powder x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The UV-vis spectroscopy revealed the alteration in the bandgap energy (Eg ) of ZnO as a function of the calcination temperature of ZnO, changing the concentration of NDs, and mechanical milling of the resulting nanocomposites. The photoluminescence (PL) spectroscopy showed a decrease in the deep level emission (DLE) peaks and an increase in near-band-edge transition peaks as a result of the increasing concentration of NDs. The decrease in DLE and increase in band to band transition peaks were due to the strong interaction between the NDs and the Zn+; consequently, the Zn+ concentration decreased on the interstitial sites.

  4. High efficiency optoelectronic terahertz sources

    Lampin, Jean-François; Peytavit, Emilien; Akalin, Tahsin; Ducournau, G.; Hindle, Francis; Mouret, Gael

    2010-08-01

    We have developed a new generation of optoelectronic large bandwidth terahertz sources based on TEM horn antennas monolithically integrated with several types of photodetectors: low-temperature grown GaAs (LTG-GaAs) planar photoconductors, vertically integrated LTG-GaAs photoconductors on silicon substrate and uni-travelling-carrier photodiodes. Results of pulsed (time-domain) and photomixing (CW, frequency domain) experiments are presented.

  5. Surface structure, optoelectronic properties and charge transport in ZnO nanocrystal/MDMO-PPV multilayer films.

    Lian, Qing; Chen, Mu; Mokhtar, Muhamad Z; Wu, Shanglin; Zhu, Mingning; Whittaker, Eric; O'Brien, Paul; Saunders, Brian R

    2018-05-07

    Blends of semiconducting nanocrystals and conjugated polymers continue to attract major research interest because of their potential applications in optoelectronic devices, such as solar cells, photodetectors and light-emitting diodes. In this study we investigate the surface structure, morphological and optoelectronic properties of multilayer films constructed from ZnO nanocrystals (NCs) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV). The effects of layer number and ZnO concentration (C ZnO ) used on the multilayer film properties are investigated. An optimised solvent blend enabled well-controlled layers to be sequentially spin coated and the construction of multilayer films containing six ZnO NC (Z) and MDMO-PPV (M) layers (denoted as (ZM) 6 ). Contact angle data showed a strong dependence on C ZnO and indicated distinct differences in the coverage of MDMO-PPV by the ZnO NCs. UV-visible spectroscopy showed that the MDMO-PPV absorption increased linearly with the number of layers in the films and demonstrates highly tuneable light absorption. Photoluminescence spectra showed reversible quenching as well as a surprising red-shift of the MDMO-PPV emission peak. Solar cells were constructed to probe vertical photo-generated charge transport. The measurements showed that (ZM) 6 devices prepared using C ZnO = 14.0 mg mL -1 had a remarkably high open circuit voltage of ∼800 mV. The device power conversion efficiency was similar to that of a control bilayer device prepared using a much thicker MDMO-PPV layer. The results of this study provide insight into the structure-optoelectronic property relationships of new semiconducting multilayer films which should also apply to other semiconducting NC/polymer combinations.

  6. Beyond-CMOS Device Benchmarking for Boolean and Non-Boolean Logic Applications

    Pan, Chenyun; Naeemi, Azad

    2017-01-01

    The latest results of benchmarking research are presented for a variety of beyond-CMOS charge- and spin-based devices. In addition to improving the device-level models, several new device proposals and a few majorly modified devices are investigated. Deep pipelining circuits are employed to boost the throughput of low-power devices. Furthermore, the benchmarking methodology is extended to interconnect-centric analyses and non-Boolean logic applications. In contrast to Boolean circuits, non-Bo...

  7. Development and Application of Devices for Remote Monitoring of Gamma-Ray Contamination at RECOM Ltd

    Ivanov, O.P.; Stepanov, V.E.; Chesnokov, A.V.; Sudarkin, A.N.; Urutskoev, L.I.

    1999-01-01

    Devices for remote monitoring of gamma-ray contamination develop at RECOM Ltd. are described and typical examples of their application are show. The following devices are discussed: spectrum-sensitive collimated devices for mapping of radioactivity on contaminated surfaces- scanning collimated Gamma Locator, device for field Cs-137 contamination mapping-CORAD; devices for gamma-ray imaging computer-controlled High-Energy Radiation Visualizer (HERV) and Coded Mask Imager

  8. The Cellulose Nanofibers for Optoelectronic Conversion and Energy Storage

    Yongfeng Luo

    2014-01-01

    Full Text Available Cellulose widely exists in plant tissues. Due to the large pores between the cellulose units, the regular paper is nontransparent that cannot be used in the optoelectronic devices. But some chemical and physical methods such as 2,2,6,6-tetramethylpiperidine-1-oxyl radical (TEMPO oxidation can be used to improve the pores scale between the cellulose units to reach nanometer level. The cellulose nanofibers (CNFs have good mechanical strength, flexibility, thermostability, and low thermal expansion. The paper made of these nanofibers represent a kind of novel nanostructured material with ultrahigh transparency, ultrahigh haze, conductivity, biodegradable, reproducible, low pollution, environment friendly and so on. These advantages make the novel nanostructured paper apply in the optoelectronic device possible, such as electronics energy storage devices. This kind of paper is considered most likely to replace traditional materials like plastics and glass, which is attracting widespread attention, and the related research has also been reported. The purpose of this paper is to review CNFs which are applied in optoelectronic conversion and energy storage.

  9. Opto-electronic DNA chip-based integrated card for clinical diagnostics.

    Marchand, Gilles; Broyer, Patrick; Lanet, Véronique; Delattre, Cyril; Foucault, Frédéric; Menou, Lionel; Calvas, Bernard; Roller, Denis; Ginot, Frédéric; Campagnolo, Raymond; Mallard, Frédéric

    2008-02-01

    Clinical diagnostics is one of the most promising applications for microfluidic lab-on-a-chip or lab-on-card systems. DNA chips, which provide multiparametric data, are privileged tools for genomic analysis. However, automation of molecular biology protocol and use of these DNA chips in fully integrated systems remains a great challenge. Simplicity of chip and/or card/instrument interfaces is amongst the most critical issues to be addressed. Indeed, current detection systems for DNA chip reading are often complex, expensive, bulky and even limited in terms of sensitivity or accuracy. Furthermore, for liquid handling in the lab-on-cards, many devices use complex and bulky systems, either to directly manipulate fluids, or to ensure pneumatic or mechanical control of integrated valves. All these drawbacks prevent or limit the use of DNA-chip-based integrated systems, for point-of-care testing or as a routine diagnostics tool. We present here a DNA-chip-based protocol integration on a plastic card for clinical diagnostics applications including: (1) an opto-electronic DNA-chip, (2) fluid handling using electrically activated embedded pyrotechnic microvalves with closing/opening functions. We demonstrate both fluidic and electric packaging of the optoelectronic DNA chip without major alteration of its electronical and biological functionalities, and fluid control using novel electrically activable pyrotechnic microvalves. Finally, we suggest a complete design of a card dedicated to automation of a complex biological protocol with a fully electrical fluid handling and DNA chip reading.

  10. Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

    Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

    2017-12-01

    A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

  11. Prospects of III-nitride optoelectronics grown on Si

    Zhu, D; Wallis, D J; Humphreys, C J

    2013-01-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al 2 O 3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures. (review article)

  12. Device Configuration Handler for Accelerator Control Applications at Jefferson Lab

    Bickley, Matt; Chevtsov, P.; Larrieu, T.

    2003-01-01

    The accelerator control system at Jefferson Lab uses hundreds of physical devices with such popular instrument bus interfaces as Industry Pack (IPAC), GPIB, RS-232, etc. To properly handle all these components, control computers (IOCs) must be provided with the correct information about the unique memory addresses of the used interface cards, interrupt numbers (if any), data communication channels and protocols. In these conditions, the registration of a new control device in the control system is not an easy task for software developers. Because the device configuration is distributed, it requires the detailed knowledge about not only the new device but also the configuration of all other devices on the existing system. A configuration handler implemented at Jefferson Lab centralizes the information about all control devices making their registration user-friendly and very easy to use. It consists of a device driver framework and the device registration software developed on the basis of ORACLE database and freely available scripting tools (perl, php)

  13. [Design and application of implantable medical device information management system].

    Cao, Shaoping; Yin, Chunguang; Zhao, Zhenying

    2013-03-01

    Through the establishment of implantable medical device information management system, with the aid of the regional joint sharing of resources, we further enhance the implantable medical device traceability management level, strengthen quality management, control of medical risk.

  14. Modification of the optoelectronic properties of two-dimensional MoS2 crystals by ultraviolet-ozone treatment

    Yang, Hae In; Park, Seonyoung; Choi, Woong

    2018-06-01

    We report the modification of the optoelectronic properties of mechanically-exfoliated single layer MoS2 by ultraviolet-ozone exposure. Photoluminescence emission of pristine MoS2 monotonically decreased and eventually quenched as ultraviolet-ozone exposure time increased from 0 to 10 min. The reduction of photoluminescence emission accompanied reduction of Raman modes, suggesting structural degradation in ultraviolet-ozone exposed MoS2. Analysis with X-ray photoelectron spectroscopy revealed that the formation of Ssbnd O and Mosbnd O bonding increases with ultraviolet-ozone exposure time. Measurement of electrical transport properties of MoS2 in a bottom-gate thin-film transistor configuration suggested the presence of insulating MoO3 after ultraviolet-ozone exposure. These results demonstrate that ultraviolet-ozone exposure can significantly influence the optoelectronic properties of single layer MoS2, providing important implications on the application of MoS2 and other two-dimensional materials into optoelectronic devices.

  15. Polycrystalline CVD diamond device level modeling for particle detection applications

    Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

    2016-12-01

    Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

  16. Polycrystalline CVD diamond device level modeling for particle detection applications

    Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

    2016-01-01

    Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

  17. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  18. Metastable State Diamond Growth and its Applications to Electronic Devices.

    Jeng, David Guang-Kai

    Diamond which consists of a dense array of carbon atoms joined by strong covalent bonds and formed into a tetrahedral crystal structure has remarkable mechanical, thermal, optical and electrical properties suitable for many industrial applications. With a proper type of doping, diamond is also an ideal semiconductor for high performance electronic devices. Unfortunately, natural diamond is rare and limited by its size and cost, it is not surprising that people continuously look for a synthetic replacement. It was believed for long time that graphite, another form of carbon, may be converted into diamond under high pressure and temperature. However, the exact condition of conversion was not clear. In 1939, O. I. Leipunsky developed an equilibrium phase diagram between graphite and diamond based on thermodynamic considerations. In the phase diagram, there is a low temperature (below 1000^ circC) and low pressure (below 1 atm) region in which diamond is metastable and graphite is stable, therefore establishes the conditions for the coexistence of the two species. Leipunsky's pioneer work opened the door for diamond synthesis. In 1955, the General Electric company (GE) was able to produce artificial diamond at 55k atm pressure and a temperature of 2000^ circC. Contrary to GE, B. Derjaguin and B. V. Spitzyn in Soviet Union, developed a method of growing diamonds at 1000^circC and at a much lower pressure in 1956. Since then, researchers, particularly in Soviet Union, are continuously looking for methods to grow diamond and diamond film at lower temperatures and pressures with slow but steady progress. It was only in the early 80's that the importance of growing diamond films had attracted the attentions of researchers in the Western world and in Japan. Recent progress in plasma physics and chemical vapor deposition techniques in integrated electronics technology have pushed the diamond growth in its metastable states into a new era. In this research, a microwave plasma

  19. 78 FR 53151 - The Applicability of Good Laboratory Practice in Premarket Device Submissions: Questions and...

    2013-08-28

    ...] The Applicability of Good Laboratory Practice in Premarket Device Submissions: Questions and Answers... availability of the draft guidance entitled ``The Applicability of Good Laboratory Practice in Premarket Device... applicability of good laboratory practice (GLP) to nonclinical laboratory studies conducted in support of...

  20. A novel method of TVTS in the TS-3 device and the proposal of its application to a large device

    Tokimatsu, K.; Hayashi, N.; Ueda, Y.; Ono, Y.; Katsurai, M.

    1997-01-01

    A novel method of television Thomson scattering (TVTS) has been developed in the TS-3 device. In this system, a framing camera is located between a spectroscope and a close coupled device camera. This framing camera can take two successive frames from the exit of the spectroscope. The time interval is of 500 ns between those two frames. Because of the shortness of this time interval, the background light is negligible; moreover TVTS is applicable to the TS-3 device whose plasma lifetime is about 150 μs. This method indicates the possibility of not only high spatial resolution but also time repetition in a simple system. (orig.)

  1. Application of high power microwave vacuum electron devices

    Ding Yaogen; Liu Pukun; Zhang Zhaochuan; Wang Yong; Shen Bin

    2011-01-01

    High power microwave vacuum electron devices can work at high frequency, high peak and average power. They have been widely used in military and civil microwave electron systems, such as radar, communication,countermeasure, TV broadcast, particle accelerators, plasma heating devices of fusion, microwave sensing and microwave heating. In scientific research, high power microwave vacuum electron devices are used mainly on high energy particle accelerator and fusion research. The devices include high peak power klystron, CW and long pulse high power klystron, multi-beam klystron,and high power gyrotron. In national economy, high power microwave vacuum electron devices are used mainly on weather and navigation radar, medical and radiation accelerator, TV broadcast and communication system. The devices include high power pulse and CW klystron, extended interaction klystron, traveling wave tube (TWT), magnetron and induced output tube (IOT). The state of art, common technology problems and trends of high power microwave vacuum electron devices are introduced in this paper. (authors)

  2. Nanomaterials for Electronics and Optoelectronics

    Koehne, Jessica E.; Meyyappan, M.

    2011-01-01

    Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

  3. Devices Based on Parallel-Plate Waveguides for Terahertz Applications

    Reichel, Kimberly S.

    The promise of terahertz (THz) frequencies for technological applications is wide, spanning from wireless communications for faster downloads to non-destructive imaging for security screening. Although the potential is high, there is a lack of the basic devices necessary to make these prospects a reality. One essential component for any electromagnetic wave technology is a waveguide, which as the name implies can guide light waves, like a hose would direct water from the source to the desired target location. Several waveguide types have been introduced for THz frequencies, one of the most promising of which is the parallel-plate waveguide (PPWG). The PPWG is attractive based on its superior waveguiding performance of efficient input coupling and low losses, but additionally it serves as an excellent platform for other purposes. The projects presented in this dissertation highlight a few new functionalities incorporated into, and enabled by, a PPWG for sensing, filtering, and splitting. First, we characterize a high quality factor resonator integrated into a PPWG used for microfluidic sensing. Typically, the characterization of the frequency-dependent electric field profile inside a narrowband resonator is challenging, either due to limited optical access or to the perturbative effects of invasive probes. In our situation however, the geometry of the PPWG allows for direct access to the resonant cavity via the open sides of the waveguide and a novel implementation of the air-biased coherent detection (ABCD) method permits non-invasive probing. Through both experiment and simulation, we see the narrowband frequencies trapped in the resonator and also discover an unexpected broadband asymmetric field distribution due to the resonator inside the waveguide, yielding new information that is not available in the far field. Second, we investigate a narrowband tunable filter based on extraordinary optical transmission (EOT) through a 1D array of subwavelength holes inside

  4. Applications of a high temperature sessile drop device

    Schwarz, B; Eisenmenger-Sittner, C [Vienna University of Technology, Insitute of Solid State Physics E-138, Wiedner Hauptstrasse 8-10, A-1040 Vienna (Austria); Worbs, P [Max-Planck-Institut fuer Plasmaphysik, Bereich Materialforschung, Boltzmannstrasse 2, D-85748 Garching (Germany)], E-mail: bernhard.schwarz@ifp.tuwien.ac.at

    2008-03-01

    The wettability of a liquid metal on a solid surface is of great technological interest for the industry (soldering, brazing, infiltration) as well as for fundamental research (diffusion, chemical reaction, intermetallic phases). The characterization of wetting is done by measuring the contact angle at the triple line of the liquid on the solid. A High Temperature Sessile Drop Device (HTSDD) was constructed and several applications were tested: (i) a wettability study of a copper-based brazing alloy (Cu-ABA) on TiN{sub x} coatings with different stoichiometries. The data derived from the HTSDD show that the reduction of the nitrogen content in the TiN coating reduces the time for reaching the final contact angle. Also for substoichiometric TiC a similar behaviour is predicted in literature. (ii) The liquid surface energy of molten metals can be estimated from the curvature of flattened droplets due to the influence of gravity. Two models were used for the calculation of the liquid surface energy of different liquid metals. (iii) From the droplet radius vs. time curves it is possible to distinguish between two different reactive wetting regimes - the diffusion and the reaction controlled reactive wetting. The beginning of this research topic will be discussed.

  5. Electrospinning of Nanofibers and Their Applications for Energy Devices

    Xiaomin Shi

    2015-01-01

    Full Text Available With the depletion of fossil fuels and the increasing demand of energy for economic development, it is urgent to develop renewable energy technologies to sustain the economic growth. Electrospinning is a versatile and efficient fabrication method for one-dimensional (1D nanostructured fibers of metals, metal oxides, hydrocarbons, composites, and so forth. The resulting nanofibers (NFs with controllable diameters ranging from nanometer to micrometer scale possess unique properties such as a high surface-area-to-volume and aspect ratio, low density, and high pore volume. These properties make 1D nanomaterials more advantageous than conventional materials in energy harvesting, conversion, and storage devices. In this review, the key parameters for e-spinning are discussed and the properties of electrospun NFs and applications in solar cells, fuel cells, nanogenerators, hydrogen energy harvesting and storage, lithium-ion batteries, and supercapacitors are reviewed. The advantages and disadvantages of electrospinning and an outlook on the possible future directions are also discussed.

  6. Characterisation and application of WO3 films for electrochromic devices

    Stapinski, Thomas; Marszalek, Konstanty; Swatowska, Barbara; Stanco, Agnieszka

    2013-07-01

    Electrochromic system is the one of the most popular devices using color memory effect under the influence of an applied voltage. The electrochromic system was produced based on the thin WO3 electrochromic films. Films were prepared by RF magnetron sputtering from tungsten targets in a reactive Ar+O2 gas atmosphere of various Ar/O2 ratios. The technological gas mixture pressure was 3 Pa and process temperature 30°C. Structural and optical properties of WO3 films were investigated for as-deposited and heat treated samples at temperature range from 350°C to 450°C in air. The material revealed the dependence of properties on preparation conditions and on post-deposition heat treatment. Main parameters of thin WO3 films: thickness d, refractive index n, extinction coefficient k and energy gap Eg were determined and optimized for application in electrochromic system. The main components of the system were glass plate with transparent conducting oxides, electrolyte, and glass plate with transparent conducting oxides and WO3 layer. The optical properties of the system were investigated when a voltage was applied across it. The electrochromic cell revealed the controllable transmittance depended on the operation voltage.

  7. Development and application of charcoal sorbents for cryopumping fusion devices

    Sedgley, D.W. (Grumman Corp., Bethpage, NY (USA). Space Systems Div.)

    1989-06-01

    Progress has been made in defining the capabilities of charcoal as the most promising absorbent to be used in cryopumps for fusion power application. The capabilities of alternative methods of cryopumping helium have been examined in a literature survey and by test, and the results are described here. Considerations include pumping speed, capacity to accumulate pumped gas, ease of reconditioning, use of alternative materials and tolerance to the fusion environment. Vacuum pumps for future fusion devices must handle large quantities of helium/hydrogen isotopes and other impurities. Cryopumps or turbomolecular pumps have demonstrated the capability on a small scale, and each has an important advantage: TMPs do not accumulate gases; cryopumps can separate helium from other effluents. This paper includes a review of a method for selecting charcoals for helium cryopumping, testing of a continuously operating cryopump system, and definition of a design that is based on the requirements of the Next European Torus. Tritium limits are satisfied. The pump design incorporates the charcoal sorbent system that has been recently developed and is based on a reasonable extrapolation of current state-of-the-art. Evaluation of alternative methods of separating helium and other gases led to selection of a movable barrier as the preferred solution. (orig.).

  8. Value-based procurement of medical devices: Application to devices for mechanical thrombectomy in ischemic stroke.

    Trippoli, Sabrina; Caccese, Erminia; Marinai, Claudio; Messori, Andrea

    2018-03-01

    In the acute ischemic stroke, endovascular devices have shown promising clinical results and are also likely to represent value for money, as several modeling studies have shown. Pharmacoeconomic evaluations in this field, however, have little impact on the procurement of these devices. The present study explored how complex pharmacoeconomic models that evaluate effectiveness and cost can be incorporated into the in-hospital procurement of thrombectomy devices. As regards clinical modeling, we extracted outcomes at three months from randomized trials conducted for four thrombectomy devices, and we projected long-term results using standard Markov modeling. In estimating QALYs, the same model was run for the four devices. As regards economic modeling, we firstly estimated for each device the net monetary benefit (NMB) per patient (threshold = $60,000 per QALY); then, we simulated a competitive tender across the four products by determining the tender-based score (on a 0-to-100 scale). Prices of individual devices were obtained from manufacturers. Extensive sensitivity testing was applied to our analyses. For the four devices (Solitaire, Trevo, Penumbra, Solumbra), QALYs were 1.86, 1.52, 1,79, 1.35, NMB was $101,824, $83,546, $101,923, $69,440, and tender-based scores were 99.70, 43.43, 100, 0, respectively. Sensitivity analysis confirmed findings from base-case. Our results indicate that, in the field of thrombectomy devices, incorporating the typical tools of cost-effectiveness into the processes of tenders and procurement is feasible. Bridging the methodology of cost-effectiveness with the every-day practice of in-hospital procurement can contribute to maximizing the health returns that are generated by in-hospital expenditures for medical devices. Copyright © 2018 Elsevier B.V. All rights reserved.

  9. Design of optoelectronic system for optical diffusion tomography

    Erakhtin Igor

    2017-01-01

    Full Text Available This article explores issues connected with the circuit design of a device for optical diffusion tomography, which we are currently designing. We plan to use the device in experimental studies for the development of a faster method of brain hematoma detection. We reviewed currently existing methods for emergency diagnosis of hematomas, primarily the Infrascanner model 2000, for which we identified weaknesses, and outlined suggestions for improvements. This article describes the method of scanning tissues based on a triangulated arrangement of sources and receivers of optical radiation, and it discusses the optoelectronic system that implements that principle.

  10. a Brief Survey on Basic Properties of Thin Films for Device Application

    Rao, M. C.; Shekhawat, M. S.

    Thin film materials are the key elements of continued technological advances made in the fields of optoelectronic, photonic and magnetic devices. Thin film studies have directly or indirectly advanced many new areas of research in solid state physics and chemistry which are based on phenomena uniquely characteristic of the thickness, geometry and structure of the film. The processing of materials into thin films allows easy integration into various types of devices. Thin films are extremely thermally stable and reasonably hard, but they are fragile. On the other hand organic materials have reasonable thermal stability and are tough, but are soft. Thin film mechanical properties can be measured by tensile testing of freestanding films and by the micro beam cantilever deflection technique, but the easiest way is by means of nanoindentation. Optical experiments provide a good way of examining the properties of semiconductors. Particularly measuring the absorption coefficient for various energies gives information about the band gaps of the material. Thin film materials have been used in semiconductor devices, wireless communications, telecommunications, integrated circuits, rectifiers, transistors, solar cells, light-emitting diodes, photoconductors and light crystal displays, lithography, micro- electromechanical systems (MEMS) and multifunctional emerging coatings, as well as other emerging cutting technologies.

  11. Plasmonic Devices for Near and Far-Field Applications

    Alrasheed, Salma

    2017-11-30

    Plasmonics is an important branch of nanophotonics and is the study of the interaction of electromagnetic fields with the free electrons in a metal at metallic/dielectric interfaces or in small metallic nanostructures. The electric component of an exciting electromagnetic field can induce collective electron oscillations known as surface plasmons. Such oscillations lead to the localization of the fields that can be at sub-wavelength scale and to its significant enhancement relative to the excitation fields. These two characteristics of localization and enhancement are the main components that allow for the guiding and manipulation of light beyond the diffraction limit. This thesis focuses on developing plasmonic devices for near and far-field applications. In the first part of the thesis, we demonstrate the detection of single point mutation in peptides from multicomponent mixtures for early breast cancer detection using selfsimilar chain (SCC) plasmonic devices that show high field enhancement and localization. In the second part of this work, we investigate the anomalous reflection of light for TM polarization for normal and oblique incidence in the visible regime. We propose gradient phase gap surface plasmon (GSP) metasurfaces that exhibit high conversion efficiency (up to ∼97% of total reflected light) to the anomalous reflection angle for blue, green and red wavelengths at normal and oblique incidence. In the third part of the thesis, we present a theoretical approach to narrow the plasmon linewidth and enhance the near-field intensity at a plasmonic dimer gap (hot spot) through coupling the electric localized surface plasmon (LSP) resonance of a silver hemispherical dimer with the resonant modes of a Fabry-Perot (FP) cavity. In the fourth part of this work, we demonstrate numerically bright color pixels that are highly polarized and broadly tuned using periodic arrays of metal nanosphere dimers on a glass substrate. In the fifth and final part of the

  12. Advances in graphene-based optoelectronics, plasmonics and photonics

    Nguyen, Bich Ha; Nguyen, Van Hieu

    2016-01-01

    Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented. (review)

  13. Integration of semiconductor and ceramic superconductor devices for microwave applications

    Klopman, B.B.G.; Klopman, B.B.G.; Wijers, H.W.; Gao, J.; Gao, J.; Gerritsma, G.J.; Rogalla, Horst

    1991-01-01

    Due to the very-low-loss properties of ceramic superconductors, high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature facilitates integration with semiconductor devices. Examples are bandpass amplifiers,

  14. Energy harvesting: an integrated view of materials, devices and applications

    Radousky, H. B.; Liang, H.

    2012-12-01

    Energy harvesting refers to the set of processes by which useful energy is captured from waste, environmental, or mechanical sources and is converted into a usable form. The discipline of energy harvesting is a broad topic that includes established methods and materials such as photovoltaics and thermoelectrics, as well as more recent technologies that convert mechanical energy, magnetic energy and waste heat to electricity. This article will review various state-of-the-art materials and devices for direct energy conversion and in particular will include multistep energy conversion approaches. The article will highlight the nano-materials science underlying energy harvesting principles and devices, but also include more traditional bulk processes and devices as appropriate and synergistic. Emphasis is placed on device-design innovations that lead to higher efficiency energy harvesting or conversion technologies ranging from the cm/mm-scale down to MEMS/NEMS (micro- and nano-electromechanical systems) devices. Theoretical studies are reviewed, which address transport properties, crystal chemistry, thermodynamic analysis, energy transfer, system efficiency and device operation. New developments in experimental methods; device design and fabrication; nanostructured materials fabrication; materials properties; and device performance measurement techniques are discussed.

  15. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T; Lonergan, Mark C; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau; Javey, Ali

    2016-01-01

    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

  16. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    Wang, Hsin-Ping

    2016-06-08

    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

  17. Efficient Protection of Android Applications through User Authentication Using Peripheral Devices

    Jinseong Kim; Im Y. Jung

    2018-01-01

    Android applications store large amounts of sensitive information that may be exposed and exploited. To prevent this security risk, some applications such as Syrup and KakaoTalk use physical device values to authenticate or encrypt application data. However, by manipulating these physical device values, an attacker can circumvent the authentication by executing a Same Identifier Attack and obtain the same application privileges as the user. In our work, WhatsApp, KakaoTalk, Facebook, Amazon, ...

  18. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

    Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

    2010-05-20

    Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

  19. Nuclear physics and optoelectronics presence in industry, medicine and environment

    Robu, Maria; Peteu, Gh.

    2000-01-01

    This paper reveals applications of Nuclear Physics and Optoelectronics in numerous fields of interest in industry, medicine, environment. In the first part of the work basic elements are analyzed, among which: - the large possibilities offered by the investigation, analysis and testing techniques based on nuclear physics and optoelectronics; - the superior qualitative and quantitative characteristics of these techniques, with varied applicability in fields from industry, medicine and environment. These applications refers to: - elemental analyses of content and impurities; - non-destructive testing with X and gamma radiations; - investigations with radioactive and activable tracers in trophic chains as for instance, ground-vegetation-products-consumers-environment, including also the systemic pollution factors; - complex investigations in the interface tritium-vegetation-environment-humans; - techniques and radiopharmaceutical products for medical investigations; - determinations and automatic control for levels, density, thickness, humidity, surfaces covering; - monitoring by means of remote sensing for the evaluation of the environment, vegetation and pollution factors; - applications and production of laser and UV installations; - connections through optical fibres resistant to radiations; - imaging and medical bioengineering; - advances in X ray, laser and ultrasonic radiology; - monitoring with radiations beams. In the final part, there are presented examples of optoelectronics and nuclear physics applications in fields in industry, medicine and environment, with special stress on their basic characteristics and efficiency. (authors)

  20. Left ventricular assist device as destination therapy: application of the payment-by-results approach for the device reimbursement.

    Messori, Andrea; Trippoli, Sabrina; Bonacchi, Massimo; Sani, Guido

    2009-08-01

    Value-based methods are increasingly used to reimburse therapeutic innovation, and the payment-by-results approach has been proposed for handling interventions with limited therapeutic evidence. Because most left ventricular assist devices are supported by preliminary efficacy data, we examined the effectiveness data of the HeartMate (Thoratec Corp, Pleasanton, CA) device to explore the application of the payment-by-results approach to these devices and to develop a model for handling reimbursements. According to our model, after establishing the societal economic countervalue for each month of life saved, each patient treated with one such device is associated to the payment of this countervalue for every month of survival lived beyond the final date of estimated life expectancy without left ventricular assist devices. Our base-case analysis, which used the published data of 68 patients who received the HeartMate device, was run with a monthly countervalue of euro 5000, no adjustment for quality of life, and a baseline life expectancy of 150 days without left ventricular assist devices. Sensitivity analysis was aimed at testing the effect of quality of life adjustments and changes in life expectancy without device. In our base-case analysis, the mean total reimbursement per patient was euro 82,426 (range, euro 0 to euro 250,000; N = 68) generated as the sum of monthly payments. This average value was close to the current price of the HeartMate device (euro 75,000). Sensitivity testing showed that the base-case reimbursement of euro 82,426 was little influenced by variations in life expectancy, whereas variations in utility had a more pronounced impact. Our report delineates an innovative procedure for appropriately allocating economic resources in this area of invasive cardiology.

  1. p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

    Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

    2013-01-01

    Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm 2 V −1 s −1 and a hole concentration of 1.67 × 10 17  cm −3 , respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application

  2. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

    Nen-Wen Pu

    2015-09-01

    Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  3. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

    Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

    2015-09-21

    : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  4. An application of residual current protective device at electrical installation

    Firman Silitonga

    2008-01-01

    In an electrical installation, a protection for overload and short circuit are always to be installed. In addition to the installation, it is necessary to be installed a protection device for residual current because both the short circuit and the overload device protection will not work for the residual current. The quantity of the residual current must be defined first at any electrical installation to define an appropriate residual current protection so that not every residual current will break the circuit down. This paper will explain a method how to install a residual protection device for 3500 VA or more at TN and TT of earthing system. (author)

  5. Plasmonic Devices for Near and Far-Field Applications

    Alrasheed, Salma

    2017-01-01

    In the first part of the thesis, we demonstrate the detection of single point mutation in peptides from multicomponent mixtures for early breast cancer detection using selfsimilar chain (SCC) plasmonic devices that show high field enhancement

  6. Miniaturized tools and devices for bioanalytical applications: an overview

    Chudy, M.; Grabowska, I.; Ciosek, P.

    2009-01-01

    This article presents an overview of various miniaturized devices and technologies developed by our group. Innovative, fast and cheap procedures for the fabrication of laboratory microsystems based on commercially available materials are reported and compared with well-established microfabricatio...... optic detectors, potentiometric sensors platforms, microreactors and capillary electrophoresis (CE) microchips as well as integrated microsystems e. g. double detection microanalytical systems, devices for studying enzymatic reactions and a microsystem for cell culture and lysis....

  7. Optoelectronic figure of merit of a metal nanoparticle—quantum dot (MNP-QD) hybrid molecule for assessing its suitability for sensing applications

    Hapuarachchi, Harini; Mallawaarachchi, Sudaraka; Hattori, Haroldo T.; Zhu, Weiren; Premaratne, Malin

    2018-02-01

    Recently, many have studied various configurations of metal nanoparticle-quantum dot (MNP-QD) hybrid molecules based on different metals and tunable parameters. In this paper, we aim to incite the interest in using MNP-QD nanohybrids, which possess sensing capabilities superior to those of the individual constituents, for sensing applications that rely on scattered light. When assessing whether a given MNP-QD configuration is suited for an application, sometimes it is hard to assess the pros and cons of a given configuration against other candidates. Here we propose a simple, elegant relative figure of merit (RFoM), which focuses on maximizing the scattered intensity and the refractive index sensitivity of the nanohybrid, to rank the suitability of viable MNP-QD configurations for a particular sensing application. We use the proposed RFoM to analyse the optical spectra of noble, transition, post transition and alkali metal based MNP-QD nanohybrids using the representative metals Au, Ag, Cu, Al and Na, adopting a generalized nonlocal optical response (GNOR) method based cavity QED approach. Based on our observations, we suggest how the usage of MNP-QD nanohybrids could improve the conventionally studied tumour targeting applications. Moreover, we propose potential substitutes for noble metals conventionally considered for MNP-QD nanohybrids.

  8. Device Physics of Narrow Gap Semiconductors

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  9. Vacuum nanoelectronic devices novel electron sources and applications

    Evtukh, Anatoliy; Yilmazoglu, Oktay; Mimura, Hidenori; Pavlidis, Dimitris

    2015-01-01

    Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments.  This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. Unique coverage of quantum physical results for electron-field emission and novel electron sourc...

  10. Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

    Lee, F. C.; Chen, D. Y.; Jovanovic, M.; Hopkins, D. C.

    1985-01-01

    The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

  11. THz Wave Propagation on Strip Lines: Devices, Properties, and Applications

    Y. Kadoya

    2008-06-01

    Full Text Available We report the propagation characteristics of THz pulses on micro-strip-lines and coplanar strip-lines, in which low permittivity polymer materials are used as the dielectric layer or the substrate. As a result of the low attenuation and small dispersion in the devices, the spectral width up to 3 THz can be achieved even after the 1 mm propagation. Spectroscopic characterizations of liquid or powder specimens are demonstrated using the devices. We also show a possibility of realizing a very low attenuation using a quadrupole mode in three strip coplanar lines on the polymer substrate.

  12. Integration of semiconductor and ceramic superconductor devices for microwave applications

    Klopman, B.B.G.; Weijers, H.W.; Gao, J.; Gerritsma, G.J.; Rogalla, H.

    1991-01-01

    Due to the very low-loss properties of ceramic superconductors high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature, facilitates the integration with semiconductor devices. Examples are bandpass amplifiers, microwave-operated SQUIDs combined with GaAs preamplifiers, detectors, and MOSFET low-frequency amplifiers. This paper discusses the design of such circuits on a single one inch alumina substrate using surface mount techniques. Furthermore data on circuits that have been realized in our laboratory will be presented

  13. Fabrication of Eu doped CdO [Al/Eu-nCdO/p-Si/Al] photodiodes by perfume atomizer based spray technique for opto-electronic applications

    Ravikumar, M.; Ganesh, V.; Shkir, Mohd; Chandramohan, R.; Arun Kumar, K. Deva; Valanarasu, S.; Kathalingam, A.; AlFaify, S.

    2018-05-01

    In this study, thin films of cadmium oxide (CdO) with different concentrations (0, 1, 3, and 5 wt%) of Eu doping were deposited onto Si and glass substrates by a novel and facile spray technique using simple perfume atomizer for the first time. Prepared films were characterized for structural, morphological, optical properties and the photo diode studies, using X-ray diffraction, scanning electron microscope, UV-Vis spectrophotometer, Isbnd V characteristics, and fundamental parameters are reported. All the prepared Eu:CdO films exhibit cubic structure. The preferential orientation is along (200) plane. Scanning electron microscopy study indicates the growth of smooth and pin-hole free films with clusters of homogeneous grains. The values of band gap energy are found to be varying from 2.42 to 2.33 eV for various Eu doping concentration from 0 to 5 wt%. EDAX studies revealed the presence of Eu, Cd and O elements without any other impurities. FTIR spectra showed a peak at 575 cm-1 confirming the stretching mode of Cdsbnd O. The resistivity (ρ), high carrier concentration (n) and carrier mobility (μ) for 3 wt% CdO thin film are found to be 0.452 × 10-3(Ω.cm), 17.82 × 1020 cm-3 and 7.757 cm2/V, respectively. Current-voltage measurements on the fabricated nanostructured Al/Eu-nCdO/p-Si/Al heterojunction device showed a non-linear electric characteristics indicating diode like behaviour.

  14. Studies of the applicability of optoelectronic devices for instrumentation in high-energy physics. Progress report, June 1, 1982-May 31, 1983

    Cleland, W.E.; Coon, D.; Engels, E.; Shepard, P.; Thompson, J.

    1983-01-01

    The new program is a study of direct photon physics, both at the ISR and the Tevatron. In addition, there is an effort to search for fractional charges in semiconductors, which has strong technical ties to our R and D efforts in the semiconductor detectors required for E706. The production of single direct photons is regarded as a good testing ground for QCD. According to our present understanding, the basic interactions that are responsible for this process, to first order, are the QCD Compton process qg→#betta#q and the annihilation process q anti q→#betta#g. Study of the former process will give information on the gluon structure function, while the latter will yield information on the gluon fragmentation process. A third process which yields single photons is the bremsstrahlung diagram, but preliminary data from R807 indicates that it is small. To separate the contribution of the remaining two diagrams, the pp and p anti p direct single photon production can be compared, since the former has no contribution from the annihilation diagram, apart from the contribution from the sea. Also, direct single photon production in π + p and π - p interactions can be compared, which have identical contributions from the Compton diagram but different contributions from the annihilation diagram. Because we are involved in both R807/808, which will study pp and p anti p interactions and E706, which will study π + p, π - p, and pp interactions, we expect to be in a position to make a detailed study of the gluon structure function. In addition to single photon production, both experiments plan to study events with both #betta##betta# and e + e - final states, which should permit similar systematic comparisons to be made for a study of the Drell-Yan and related processes

  15. The Application of Mobile Devices in the Translation Classroom

    Bahri, Hossein; Mahadi, Tengku Sepora Tengku

    2016-01-01

    While the presence of mobile electronic devices in the classroom has posed real challenges to instructors, a growing number of teachers believe they should seize the chance to improve the quality of instruction. The advent of new mobile technologies (laptops, smartphones, tablets, etc.) in the translation classroom has opened up new opportunities…

  16. Industrial application of atom probe tomography to semiconductor devices

    Giddings, A.D.; Koelling, S.; Shimizu, Y.; Estivill, R.; Inoue, K.; Vandervorst, W.; Yeoh, W.K.

    2018-01-01

    Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as such, it seems uniquely suited to meet these

  17. NEW SCANNING DEVICE FOR SCANNING TUNNELING MICROSCOPE APPLICATIONS

    SAWATZKY, GA; Koops, Karl Richard

    A small, single piezo XYZ translator has been developed. The device has been used as a scanner for a scanning tunneling microscope and has been tested successfully in air and in UHV. Its simple design results in a rigid and compact scanning unit which permits high scanning rates.

  18. On the value of device flexibility in smart grid applications

    Gerards, M. E. T.; Hurink, J. L.

    2017-01-01

    Demand-side management and demand response are proposed as a means to solve different objectives in smart grids, such as, e.g., maximizing self-consumption of a house or peak shaving. Crucial components in these approaches are load shiftable/steerable devices, so-called smart appliances. Although

  19. Molecular and polymeric organic semiconductors for applications in photovoltaic devices

    Meinhardt, G.

    2000-01-01

    Photovoltaic devices based on molecular as well as polymeric semiconductors were investigated and characterized. The organic materials presented here exhibit the advantages of low price, low processing costs and the possibility of tuning their optical properties. The photovoltaic properties were investigated by photocurrent action spectroscopy and I/V-characterization and the electric field distribution in each layer by electroabsorption spectroscopy. Single layer devices of molecular semiconductors and semiconducting polymers like methyl-substituted polyparaphenylene, CN-Ether-PPV, copper-phthalocyanine, the terryleneimide DOTer, the perylene derivatives BBP-perylene and polyBBP-perylene show low photocurrents as well as a small photovoltaic effect in their pristine form. One way to enhance the performance is to blend the active layer with molecular dopands like a soluble form of titaniumoxophthalocyanine or the aromatic macromolecule RS19 or to combine two organic semiconductors in heterostructure devices. The motivation for these experiments was the optimization of either charge transfer or energy transfer from one molecule to its neighbor molecule. A model based on the internal filter effect was used for fitting the photoresponse of single layer devices. For optimising heterostructure solar cells a more sophisticated theoretical model taking into account interference effects was used. (author)

  20. Current state of low energy EB devices and its application technology

    Kinoshita, Shinobu

    2000-01-01

    This paper introduced the current state of low energy type EB (electron beam) devices with an acceleration voltage of 300 kV or below and specific application examples. As for EB devices, it introduced the ultra-compact new EB device (microbeam LV), experimental devices, and the pilot/production devices which have been recently developed by the manufacturer to which the author belongs. As the applications of low energy EB devices, it specifically introduced curing, graft polymerization, crosslinking, and sterilization/disinfection with soft electrons: (1) examples of EB curing; antistatic agents in antibacterial/antifungal property imparting processing, hard coat, printing and topcoat, high gloss/pattern transfer processing, and metal vapor deposition film, (2) example of graft polymerization; barrier imparting films, and (3) examples of crosslinking; shrinking films/tubes and foamed sheets. (A.O.)

  1. Review of Wearable Device Technology and Its Applications to the Mining Industry

    Mokhinabonu Mardonova

    2018-03-01

    Full Text Available This paper reviews current trends in wearable device technology, and provides an overview of its prevalent and potential deployments in the mining industry. This review includes the classification of wearable devices with some examples of their utilization in various industrial fields as well as the features of sensors used in wearable devices. Existing applications of wearable device technology to the mining industry are reviewed. In addition, a wearable safety management system for miners and other possible applications are proposed. The findings of this review show that by introducing wearable device technology to mining sites, the safety of mining operations can be enhanced. Therefore, wearable devices should be further used in the mining industry.

  2. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    Ioan Botiz

    2014-03-01

    Full Text Available It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties.

  3. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    Botiz, Ioan; Stingelin, Natalie

    2014-01-01

    It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. © 2014 by the authors.

  4. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    Botiz, Ioan

    2014-03-19

    It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. © 2014 by the authors.

  5. Microwave-assisted synthesis of Gd{sup 3+} doped PbI{sub 2} hierarchical nanostructures for optoelectronic and radiation detection applications

    Shkir, Mohd, E-mail: shkirphysics@gmail.com; AlFaify, S.; Yahia, I.S.; Ganesh, V.; Shoukry, H.

    2017-03-01

    In this work, we report the simple, low temperature and rapid microwave-assisted synthesis of undoped and Gadolinium (III) doped lead iodide with different morphologies, i.e. nanorods of average diameter ~200 nm and hierarchical (flower-shaped) nanosheets of thicknesses less than 100 nm. Prepared nanostructures were typify in details using a variety of analytical techniques that reveal the well crystallinity with hexagonal structure. We found that by changing the concentrations of Gadolinium (III) one can tailor the size and shape of nanostructures of lead iodide. The presence of Gadolinium (III) doping was assessed by energy dispersive X-ray analysis. Optical band gap and Photoluminescence intensity are found to be enhanced due to Gadolinium (III) doping. The value of Gamma linear absorption coefficient is found to be enriched with doping, which suggests its application in radiation detection.

  6. Analysis of multi cloud storage applications for resource constrained mobile devices

    Rajeev Kumar Bedi

    2016-09-01

    Full Text Available Cloud storage, which can be a surrogate for all physical hardware storage devices, is a term which gives a reflection of an enormous advancement in engineering (Hung et al., 2012. However, there are many issues that need to be handled when accessing cloud storage on resource constrained mobile devices due to inherent limitations of mobile devices as limited storage capacity, processing power and battery backup (Yeo et al., 2014. There are many multi cloud storage applications available, which handle issues faced by single cloud storage applications. In this paper, we are providing analysis of different multi cloud storage applications developed for resource constrained mobile devices to check their performance on the basis of parameters as battery consumption, CPU usage, data usage and time consumed by using mobile phone device Sony Xperia ZL (smart phone on WiFi network. Lastly, conclusion and open research challenges in these multi cloud storage apps are discussed.

  7. The effects of anode material type on the optoelectronic properties of electroplated CdTe thin films and the implications for photovoltaic application

    Echendu, O. K.; Dejene, B. F.; Dharmadasa, I. M.

    2018-03-01

    The effects of the type of anode material on the properties of electrodeposited CdTe thin films for photovoltaic application have been studied. Cathodic electrodeposition of two sets of CdTe thin films on glass/fluorine-doped tin oxide (FTO) was carried out in two-electrode configuration using graphite and platinum anodes. Optical absorption spectra of films grown with graphite anode displayed significant spread across the deposition potentials compared to those grown with platinum anode. Photoelectrochemical cell result shows that the CdTe grown with graphite anode became p-type after post-deposition annealing with prior CdCl2 treatment, as a result of carbon incorporation into the films, while those grown with platinum anode remained n-type after annealing. A review of recent photoluminescence characterization of some of these CdTe films reveals the persistence of a defect level at (0.97-0.99) eV below the conduction band in the bandgap of CdTe grown with graphite anode after annealing while films grown with platinum anode showed the absence of this defect level. This confirms the impact of carbon incorporation into CdTe. Solar cell made with CdTe grown with platinum anode produced better conversion efficiency compared to that made with CdTe grown using graphite anode, underlining the impact of anode type in electrodeposition.

  8. Beneficial effects of water in the colloidal synthesis of InP/ZnS core-shell quantum dots for optoelectronic applications.

    Ramasamy, Parthiban; Kim, Bumjin; Lee, Min-Sang; Lee, Jong-Soo

    2016-10-21

    We demonstrate that the presence of a small amount of water as an impurity during the hot-injection synthesis can significantly decrease the emission lines full width at half-maximum (FWHM) and improve the quantum yield (QY) of InP/ZnS quantum dots (QDs). By utilizing the water present in the indium precursor and solvent, we obtained InP/ZnS QDs emitting around 530 nm with a FWHM as narrow as 46 nm and a QY up to 45%. Without water, the synthesized QDs have emission around 625 nm with a FWHM of 66 nm and a QY of about 33%. Absorption spectra, XRD and XPS analyses revealed that when water is present, an amorphous phosphate layer is formed over the InP QDs and inhibits the QD growth. This amorphous layer favors the formation of a very thick ZnS shell by decreasing the lattice mismatch between the InP core and the ZnS shell. We further show the possibility to tune the emission wavelengths of InP/ZnS QDs by simply adjusting the amount of water present in the system while keeping all the other reaction parameters (i.e., precursor concentration, reaction temperature and time) constant. As an example of their application in light-emitting diodes (LEDs), the green and red InP/ZnS QDs are combined with a blue LED chip to produce white light.

  9. Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

    Okuyama, Masanori

    2005-01-01

    Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

  10. Application range of micro focus radiographic devices associated to image processors

    Cappabianca, C.; Ferriani, S.; Verre, F.

    1987-01-01

    X-ray devices having a focus area less than 100 μ are called micro focus X-ray equipment. Here the range of application and the characteristics of these devices including the possibility of employing the coupling with real time image enhancement computers are defined

  11. Application of cyclic fluorocarbon/argon discharges to device patterning

    Metzler, Dominik, E-mail: dmetzler@umd.edu [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 and Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740 (United States); Uppireddi, Kishore; Bruce, Robert L.; Miyazoe, Hiroyuki; Zhu, Yu; Price, William; Sikorski, Ed S.; Engelmann, Sebastian U.; Joseph, Eric A. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740 (United States); Oehrlein, Gottlieb S. [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740 (United States)

    2016-01-15

    With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5 nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this work, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with this work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.

  12. Application of cyclic fluorocarbon/argon discharges to device patterning

    Metzler, Dominik; Uppireddi, Kishore; Bruce, Robert L.; Miyazoe, Hiroyuki; Zhu, Yu; Price, William; Sikorski, Ed S.; Engelmann, Sebastian U.; Joseph, Eric A.; Li, Chen; Oehrlein, Gottlieb S.

    2016-01-01

    With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5 nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this work, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with this work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance

  13. Symposium on applications of superconducting quantum interference devices (SQUIDS)

    1978-01-01

    The abstracts are given of thirteen papers presented at a ''SQUID Symposium'' organized by the Division of Materials Sciences of the U.S. Department of Energy and held March 23--25, 1978, at the University of Virginia. Since SQUID systems have already been utilized in feasibility demonstration in geothermal reservoir exploration, it was recognized that these devices also hold great potential for many other important scientific measurements. Many of these are energy-related, and others include forefront investigations in a diverse group of scientific areas, from biomedical to earthquake monitoring. Research in SQUIDs has advanced so rapidly in recent years that it was felt that a symposium to review the current status and future prospects of the devices would be timely. The abstracts given present an overview of work in this area and hopefully provide an opportunity to increase awareness among basic and applied scientists of the inherent implications of the extreme measurement sensitivity in advanced SQUID systems

  14. Advanced Semiconductor Heterostructures Novel Devices, Potential Device Applications and Basic Properties

    Stroscio, Michael A

    2003-01-01

    This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the pr

  15. Appdaptivity: An Internet of Things Device-Decoupled System for Portable Applications in Changing Contexts

    Cristian Martín

    2018-04-01

    Full Text Available Currently, applications in the Internet of Things (IoT are tightly coupled to the underlying physical devices. As a consequence, upon adding a device, device replacement or user’s relocation to a different physical space, application developers have to re-perform installation and configuration processes to reconfigure applications, which bears costs in time and knowledge of low-level details. In the emerging IoT field, this issue is even more challenging due to its current unpredictable growth in term of applications and connected devices. In addition, IoT applications can be personalised to each end user and can be present in different environments. As a result, IoT scenarios are very changeable, presenting a challenge for IoT applications. In this paper we present Appdaptivity, a system that enables the development of portable device-decoupled applications that can be adapted to changing contexts. Through Appdaptivity, application developers can intuitively create portable and personalised applications, disengaging from the underlying physical infrastructure. Results confirms a good scalability of the system in terms of connected users and components involved.

  16. Appdaptivity: An Internet of Things Device-Decoupled System for Portable Applications in Changing Contexts.

    Martín, Cristian; Hoebeke, Jeroen; Rossey, Jen; Díaz, Manuel; Rubio, Bartolomé; Van den Abeele, Floris

    2018-04-26

    Currently, applications in the Internet of Things (IoT) are tightly coupled to the underlying physical devices. As a consequence, upon adding a device, device replacement or user’s relocation to a different physical space, application developers have to re-perform installation and configuration processes to reconfigure applications, which bears costs in time and knowledge of low-level details. In the emerging IoT field, this issue is even more challenging due to its current unpredictable growth in term of applications and connected devices. In addition, IoT applications can be personalised to each end user and can be present in different environments. As a result, IoT scenarios are very changeable, presenting a challenge for IoT applications. In this paper we present Appdaptivity, a system that enables the development of portable device-decoupled applications that can be adapted to changing contexts. Through Appdaptivity, application developers can intuitively create portable and personalised applications, disengaging from the underlying physical infrastructure. Results confirms a good scalability of the system in terms of connected users and components involved.

  17. Application of methods of discrete mathematics at modular synthesis of mechatronic devices

    Nikiforov, S.; Nikiforov, B.; Mandarov, E.; Rabdanova, N.

    2010-01-01

    The article is devoted to application of methods of discrete mathematics (the theory of counts, the method of matrix code and others) and synthesis of executive mechanisms of mechatronic handling devices

  18. Forensic analysis of social networking application on iOS devices

    Zhang, Shuhui; Wang, Lianhai

    2013-12-01

    The increased use of social networking application on iPhone and iPad make these devices a goldmine for forensic investigators. Besides, QQ, Wechat, Sina Weibo and skype applications are very popular in China and didn't draw attention to researchers. These social networking applications are used not only on computers, but also mobile phones and tablets. This paper focuses on conducting forensic analysis on these four social networking applications on iPhone and iPad devices. The tests consisted of installing the social networking applications on each device, conducting common user activities through each application and correlation analysis with other activities. Advices to the forensic investigators are also given. It could help the investigators to describe the crime behavior and reconstruct the crime venue.

  19. Principles and applications of superconducting quantum interference devices

    1992-01-01

    Principles and applications of SQUIDs serves as a textbook and a multi-author collection of critical reviews. Providing both basic aspects and recent progress in SQUIDs technology, it offers a realistic and stimulating picture of the state of the art. It can also contribute to a further development of the field for commercial applications.

  20. Engineering semantic-based interactive multi-device web applications

    Bellekens, P.A.E.; Sluijs, van der K.A.M.; Aroyo, L.M.; Houben, G.J.P.M.; Baresi, L.; Fraternali, P.; Houben, G.J.

    2007-01-01

    To build high-quality personalized Web applications developers have to deal with a number of complex problems. We look at the growing class of personalized Web Applications that share three characteristic challenges. Firstly, the semantic problem of how to enable content reuse and integration.

  1. Establishment and application of a large calibration device of artificial radionuclide plane source

    Hu Mingkao; Zhang Jiyun; Wang Xinxing; Zhang Sheng

    2010-01-01

    With the expansion of the application fields of nuclear techniques and the development of economy, more and more airborne/vehicle and other large γ spectrometers are applied in the environment radiation monitoring of artificial radioactive nuclides. In order to ensure the reliability of the monitoring results, a large calibration device of artificial radionuclide plane source is established. The paper introduces the device's built history and the results of application. (authors)

  2. A spin-optoelectronic detector for the simultaneous measurement of the degree of circular polarization and intensity of a laser beam

    Khamari, Shailesh K.; Porwal, S.; Oak, S. M.; Sharma, T. K.

    2015-01-01

    Simultaneous measurement of the degree of circular polarization and intensity of a laser beam is essential in advanced photonic applications. However, it is not feasible with conventional helicity dependent detectors where an additional detector is needed to measure the intensity. Here, we report the development of a spin-optoelectronic detector that can measure the degree of circular polarization and the intensity of a laser beam simultaneously. The principle of operation of device is based on the two independent fundamental phenomena occurring in Au/InP hybrid structures, namely, Inverse Spin Hall Effect (ISHE) and the Photo-Voltaic (PV) Effect. The magnitude of ISHE and PV signals is simultaneously measured across the two pairs of contacts that are made on the top of device. No cross talk is observed between the two detectors made on the same chip. The all-electronic compact device is fast, operates at room temperature, and opens up the possibility of many applications in an integrated optoelectronic platform

  3. Electromagnetic radiation screening of semiconductor devices for long life applications

    Hall, T. C.; Brammer, W. G.

    1972-01-01

    A review is presented of the mechanism of interaction of electromagnetic radiation in various spectral ranges, with various semiconductor device defects. Previous work conducted in this area was analyzed as to its pertinence to the current problem. The task was studied of implementing electromagnetic screening methods in the wavelength region determined to be most effective. Both scanning and flooding type stimulation techniques are discussed. While the scanning technique offers a considerably higher yield of useful information, a preliminary investigation utilizing the flooding approach is first recommended because of the ease of implementation, lower cost and ability to provide go-no-go information in semiconductor screening.

  4. Establishment and application of standard devices for radioactivity measurement

    Zhou Changgui; Li Xingyuan; Chen Zigen

    1991-03-01

    In order to establish the radioactivity measurement standards a 4πβ-γ coincidence apparatus and a 4πγ ionization chamber have been installed in the laboratory. The 4πβ-γ coincidence apparatus is for absolute measurement, and its uncertainty is ±(0.3∼5)%. The 4πγ ionization chamber is for working standard, and its uncertainty is ±(1∼5)%. The combination of these devices can meet the quality requirements controlled by National Verification System in the transfer of radioactivity values

  5. Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

    Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua

    2018-06-21

    Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

  6. Rapid deposition process for zinc oxide film applications in pyroelectric devices

    Hsiao, Chun-Ching; Yu, Shih-Yuan

    2012-01-01

    Aerosol deposition (AD) is a rapid process for the deposition of films. Zinc oxide is a low toxicity and environmentally friendly material, and it possesses properties such as semiconductivity, pyroelectricity and piezoelectricity without the poling process. Therefore, AD is used to accelerate the manufacturing process for applications of ZnO films in pyroelectric devices. Increasing the temperature variation rate in pyroelectric films is a useful method for enhancing the responsivity of pyroelectric devices. In the present study, a porous ZnO film possessing the properties of large heat absorption and high temperature variation rate is successfully produced by the AD rapid process and laser annealing for application in pyroelectric devices. (paper)

  7. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-01

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

  8. Effects of Sterilization Cycles on PEEK for Medical Device Application

    Yap, Wai Teng; Foo, Soo Leong; Lee, Teck Kheng

    2018-01-01

    The effects of the sterilization process have been studied on medical grade thermoplastic polyetheretherketone (PEEK). For a reusable medical device, material reliability is an important parameter to decide its lifetime, as it will be subjected to the continuous steam sterilization process. A spring nature, clip component was selected out of a newly designed medical device (patented) to perform this reliability study. This clip component was sterilized for a predetermined number of cycles (2, 4, 6, 8, 10, 20…100) at 121 °C for 30 min. A significant decrease of ~20% in the compression force of the spring was observed after 30 cycles, and a ~6% decrease in the lateral dimension of the clip was observed after 50 cycles. No further significant change in the compression force or dimension was observed for the subsequent sterilization cycles. Vickers hardness and differential scanning calorimetry (DSC) techniques were used to characterize the effects of sterilization. DSC results exhibited no significant change in the degree of cure and melting behavior of PEEK before and after the sterilization. Hardness measurement exhibited an increase of ~49% in hardness after just 20 cycles. When an unsterilized sample was heated for repetitive cycles without the presence of moisture (121 °C, 10 and 20 cycles), only ~7% of the maximum change in hardness was observed. PMID:29466289

  9. Guided-wave acousto-optics interactions, devices, and applications

    1990-01-01

    The field of integrated- or guided-wave optics has experienced significant and continuous growth since its inception in the late 1960s. There has been a considerable increase in research and development activity in this field worldwide and some significant advances in the realization of working in­ tegrated optic devices and modules have been made in recent years. In fact, there have already been some commercial manufacturing and technical ap­ plications of such devices and modules. The guided-wave-acoustooptics involving Bragg interactions between guided optical waves and surface acoustic waves is one of the areas of in­ tegrated-optics that has reached some degree of scientific and technological maturity. This topical volume is devoted to an in-depth treatment of this emerging branch of science and technology. Presented in this volume are concise treatments on bulk-wave acoustooptics, guided-wave optics, and surface acoustic waves, and detailed studies of guided-wave acoustooptic Bragg diffraction in thr...

  10. Effects of Sterilization Cycles on PEEK for Medical Device Application.

    Kumar, Amit; Yap, Wai Teng; Foo, Soo Leong; Lee, Teck Kheng

    2018-02-21

    The effects of the sterilization process have been studied on medical grade thermoplastic polyetheretherketone (PEEK). For a reusable medical device, material reliability is an important parameter to decide its lifetime, as it will be subjected to the continuous steam sterilization process. A spring nature, clip component was selected out of a newly designed medical device (patented) to perform this reliability study. This clip component was sterilized for a predetermined number of cycles (2, 4, 6, 8, 10, 20…100) at 121 °C for 30 min. A significant decrease of ~20% in the compression force of the spring was observed after 30 cycles, and a ~6% decrease in the lateral dimension of the clip was observed after 50 cycles. No further significant change in the compression force or dimension was observed for the subsequent sterilization cycles. Vickers hardness and differential scanning calorimetry (DSC) techniques were used to characterize the effects of sterilization. DSC results exhibited no significant change in the degree of cure and melting behavior of PEEK before and after the sterilization. Hardness measurement exhibited an increase of ~49% in hardness after just 20 cycles. When an unsterilized sample was heated for repetitive cycles without the presence of moisture (121 °C, 10 and 20 cycles), only ~7% of the maximum change in hardness was observed.

  11. Dynamics of fluidic devices with applications to rotor pitch links

    Scarborough, Lloyd H., III

    Coupling a Fluidic Flexible Matrix Composite (F2MC) to an air-pressurized fluid port produces a fundamentally new class of tunable vibration isolator. This fluidlastic device provides significant vibration reduction at an isolation frequency that can be tuned over a broad frequency range. The material properties and geometry of the F2MC element, as well as the port inertance, determine the isolation frequency. A unique feature of this device is that the port inertance depends on pressure so the isolation frequency can be adjusted by changing the air pressure. For constant port inertance, the isolation frequency is largely independent of the isolated mass so the device is robust to changes in load. A nonlinear model is developed to predict isolator length and port inertance. The model is linearized and the frequency response calculated. Experiments agree with theory, demonstrating a tunable isolation range from 9 Hz to 36 Hz and transmitted force reductions of up to 60 dB at the isolation frequency. Replacing rigid pitch links on rotorcraft with coupled fluidic devices has the potential to reduce the aerodynamic blade loads transmitted through the pitch links to the swashplate. Analytical models of two fluidic devices coupled with three different fluidic circuits are derived. These passive fluidlastic systems are tuned, by varying the fluid inertances and capacitances of each fluidic circuit, to reduce the transmitted pitch-link loads. The different circuit designs result in transmitted pitch link loads reduction at up to three main rotor harmonics. The simulation results show loads reduction at the targeted out-of-phase and in-phase harmonics of up to 88% and 93%, respectively. Experimental validation of two of the fluidic circuits demonstrates loads reduction of up to 89% at the out-of-phase isolation frequencies and up to 81% at the in-phase isolation frequencies. Replacing rigid pitch links on rotorcraft with fluidic pitch links changes the blade torsional

  12. Medical Device Integrated Vital Signs Monitoring Application with Real-Time Clinical Decision Support.

    Moqeem, Aasia; Baig, Mirza; Gholamhosseini, Hamid; Mirza, Farhaan; Lindén, Maria

    2018-01-01

    This research involves the design and development of a novel Android smartphone application for real-time vital signs monitoring and decision support. The proposed application integrates market available, wireless and Bluetooth connected medical devices for collecting vital signs. The medical device data collected by the app includes heart rate, oxygen saturation and electrocardiograph (ECG). The collated data is streamed/displayed on the smartphone in real-time. This application was designed by adopting six screens approach (6S) mobile development framework and focused on user-centered approach and considered clinicians-as-a-user. The clinical engagement, consultations, feedback and usability of the application in the everyday practices were considered critical from the initial phase of the design and development. Furthermore, the proposed application is capable to deliver rich clinical decision support in real-time using the integrated medical device data.

  13. Software for Use with Optoelectronic Measuring Tool

    Ballard, Kim C.

    2004-01-01

    A computer program has been written to facilitate and accelerate the process of measurement by use of the apparatus described in "Optoelectronic Tool Adds Scale Marks to Photographic Images" (KSC-12201). The tool contains four laser diodes that generate parallel beams of light spaced apart at a known distance. The beams of light are used to project bright spots that serve as scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The computer program is applicable to a scene that contains the laser spots and that has been imaged in a square pixel format that can be imported into a graphical user interface (GUI) generated by the program. It is assumed that the laser spots and the distance(s) to be measured all lie in the same plane and that the plane is perpendicular to the line of sight of the camera used to record the image

  14. Review of multi-layered magnetoelectric composite materials and devices applications

    Chu, Zhaoqiang; PourhosseiniAsl, MohammadJavad; Dong, Shuxiang

    2018-06-01

    Multiferroic materials with the coexistence of at least two ferroic orders, such as ferroelectricity, ferromagnetism, or ferroelasticity, have recently attracted ever-increasing attention due to their potential for multifunctional device applications, including magnetic and current sensors, energy harvesters, magnetoelectric (ME) random access memory and logic devices, tunable microwave devices, and ME antenna. In this article, we provide a review of the recent and ongoing research efforts in the field of multi-layered ME composites. After a brief introduction to ME composites and ME coupling mechanisms, we review recent advances in multi-layered ME composites as well as their device applications based on the direct ME effect, magnetic sensors in particular. Finally, some remaining challenges and future perspective of ME composites and their engineering applications will be discussed.

  15. New ideas for the design of optical devices with applications in solar energy collection

    Chaves, Julio; Pereira, Manuel Collares

    2001-07-01

    New ideas for the design of optical devices and some applications to solar energy collection are presented. These are mainly solar concentrators resulting from the combination of known anidoloc (nonimaging) optics devices and known curves such as parabolic, elliptical, hyperbolic, circular arcs or flat mirrors. Other tailored curves are also used in some cases. Two possible applications are in compact high concentration devices for solar energy and ideal concentrators having a gap between the optics and the receiver. Only two dimensional solutions are explored in these cases. Due to the high number of internal reflections, the use of high reflectivity mirrors is mandatory or, alternatively, the use of total internal reflection. Combinations of 3D CPCs and torus are also presented. The obtained devices allow tracking of the sun without the need to move the receiver. An application to solar cooking is presented.

  16. Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications

    Linn, E; Ferch, S; Waser, R; Menzel, S

    2013-01-01

    Dynamic physics-based models of resistive switching devices are of great interest for the realization of complex circuits required for memory, logic and neuromorphic applications. Here, we apply such a model of an electrochemical metallization (ECM) cell to complementary resistive switches (CRSs), which are favorable devices to realize ultra-dense passive crossbar arrays. Since a CRS consists of two resistive switching devices, it is straightforward to apply the dynamic ECM model for CRS simulation with MATLAB and SPICE, enabling study of the device behavior in terms of sweep rate and series resistance variations. Furthermore, typical memory access operations as well as basic implication logic operations can be analyzed, revealing requirements for proper spike and level read operations. This basic understanding facilitates applications of massively parallel computing paradigms required for neuromorphic applications. (paper)

  17. Device and Circuit Design Challenges in the Digital Subthreshold Region for Ultralow-Power Applications

    Ramesh Vaddi

    2009-01-01

    Full Text Available In recent years, subthreshold operation has gained a lot of attention due to ultra low-power consumption in applications requiring low to medium performance. It has also been shown that by optimizing the device structure, power consumption of digital subthreshold logic can be further minimized while improving its performance. Therefore, subthreshold circuit design is very promising for future ultra low-energy sensor applications as well as high-performance parallel processing. This paper deals with various device and circuit design challenges associated with the state of the art in optimal digital subthreshold circuit design and reviews device design methodologies and circuit topologies for optimal digital subthreshold operation. This paper identifies the suitable candidates for subthreshold operation at device and circuit levels for optimal subthreshold circuit design and provides an effective roadmap for digital designers interested to work with ultra low-power applications.

  18. SPEKTROP DPU: optoelectronic platform for fast multispectral imaging

    Graczyk, Rafal; Sitek, Piotr; Stolarski, Marcin

    2010-09-01

    In recent years it easy to spot and increasing need of high-quality Earth imaging in airborne and space applications. This is due fact that government and local authorities urge for up to date topological data for administrative purposes. On the other hand, interest in environmental sciences, push for ecological approach, efficient agriculture and forests management are also heavily supported by Earth images in various resolutions and spectral ranges. "SPEKTROP DPU: Opto-electronic platform for fast multi-spectral imaging" paper describes architectural datails of data processing unit, part of universal and modular platform that provides high quality imaging functionality in aerospace applications.

  19. Research and application of devices for synchronously tracking the sun

    Wei, Ming; Sun, Youhong; Wang, Qinghua; Wu, Xiaohan [Jilin Univ. Changchun (China). College of Construction Engineering

    2008-07-01

    This paper introduces a concept of apparent motion orbit of the sun, and put forward the theory of synchronous (linear) tracking the sun. Using solarium mechanism to trail the running path of solar hour angel, and using modified sine function framework to trace solar apparent declination path, and then connect these two mechanisms with linear transmission chain. More than 45%{proportional_to}122% electricity can be output by the synchronous tracking photovoltaic (PV) devices compare with those fixed PV ones with the same area between the spring equinox to the summer solstice. The 17m{sup 2} heat collector of synchronous tracking, its static wind-driven power consumption is less than 3.5W (0.2W/m{sup 2}), and the gale consumption is less than 7W(0.34W/m{sup 2}). The apparatus can be utilized widely in solar power, heating, lighting systems and other solar energy utilization. (orig.)

  20. Speckle interferometry application for erosion measurements in fusion devices

    Gauthier, E.; Roupillard, R. [Association Euratom-CEA Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee

    2003-07-01

    In order to measure erosion/redeposition in fusion devices, a new diagnostic based on speckle interferometry is investigated. First experiments performed on carbon fibre composite (CFC) materials have shown that this technique is able to measure a modification of the surface in the range of 1 {mu}m. Further experiments have been performed on different materials using a second wavelength in order to carry out 3-dimensional measurements of the surface and to increase the dynamic range of the depth measurement. A diagnostic, based on two-wavelength TV-holography to measure in situ erosion/redeposition during long duration discharges on the CIEL limiter in Tore Supra, is under development at CEA Cadarache. (authors)

  1. Establishment and application of Competitive Intelligence System in Mobile Devices

    Anass El Haddadi

    2011-12-01

    Full Text Available The strategy concept has changed dramatically: from a long range planning to strategic planning then to strategic responsiveness. This response implies moving from a concept of change to a concept of continuous evolution. In our context, the competitive intelligence system presented aims to improve decision‐making in all aspects of business life, particularly for offensive and innovative decisions. In the paper we present XPlor EveryWhere, our competitive intelligence system based on a multidimensional analysis model for mobile devices. The objective of this system is to capture the information environment in all dimensions of a decision problem, with the exploitation of information by analyzing the evolution of their interactions

  2. Phase change heat transfer device for process heat applications

    Sabharwall, Piyush; Patterson, Mike; Utgikar, Vivek; Gunnerson, Fred

    2010-01-01

    The next generation nuclear plant (NGNP) will most likely produce electricity and process heat, with both being considered for hydrogen production. To capture nuclear process heat, and transport it to a distant industrial facility requires a high temperature system of heat exchangers, pumps and/or compressors. The heat transfer system is particularly challenging not only due to the elevated temperatures (up to ∼1300 K) and industrial scale power transport (≥50 MW), but also due to a potentially large separation distance between the nuclear and industrial plants (100+ m) dictated by safety and licensing mandates. The work reported here is the preliminary analysis of two-phase thermosyphon heat transfer performance with alkali metals. A thermosyphon is a thermal device for transporting heat from one point to another with quite extraordinary properties. In contrast to single-phased forced convective heat transfer via 'pumping a fluid', a thermosyphon (also called a wickless heat pipe) transfers heat through the vaporization/condensing process. The condensate is further returned to the hot source by gravity, i.e., without any requirement of pumps or compressors. With this mode of heat transfer, the thermosyphon has the capability to transport heat at high rates over appreciable distances, virtually isothermally and without any requirement for external pumping devices. Two-phase heat transfer by a thermosyphon has the advantage of high enthalpy transport that includes the sensible heat of the liquid, the latent heat of vaporization, and vapor superheat. In contrast, single-phase forced convection transports only the sensible heat of the fluid. Additionally, vapor-phase velocities within a thermosyphon are much greater than single-phase liquid velocities within a forced convective loop. Thermosyphon performance can be limited by the sonic limit (choking) of vapor flow and/or by condensate entrainment. Proper thermosyphon requires analysis of both.

  3. Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices

    Raeis-Hosseini, Niloufar; Rho, Junsuk

    2017-01-01

    Integration of phase-change materials (PCMs) into electrical/optical circuits has initiated extensive innovation for applications of metamaterials (MMs) including rewritable optical data storage, metasurfaces, and optoelectronic devices. PCMs have been studied deeply due to their reversible phase transition, high endurance, switching speed, and data retention. Germanium-antimony-tellurium (GST) is a PCM that has amorphous and crystalline phases with distinct properties, is bistable and nonvolatile, and undergoes a reliable and reproducible phase transition in response to an optical or electrical stimulus; GST may therefore have applications in tunable photonic devices and optoelectronic circuits. In this progress article, we outline recent studies of GST and discuss its advantages and possible applications in reconfigurable metadevices. We also discuss outlooks for integration of GST in active nanophotonic metadevices. PMID:28878196

  4. Mobile applications for handheld devices to screen and randomize acute stroke patients in clinical trials.

    Qureshi, Ai; Connelly, B; Abbott, Ei; Maland, E; Kim, J; Blake, J

    2012-08-01

    The availability of internet connectivity and mobile application software used by low-power handheld devices makes smart phones of unique value in time-sensitive clinical trials. Trial-specific applications can be downloaded by investigators from various mobile software distribution platforms or web applications delivered over HTTP. The Antihypertensive Treatment in Acute Cerebral Hemorrhage (ATACH) II investigators in collaboration with MentorMate released the ATACH-II Patient Recruitment mobile application available on iPhone, Android, and Blackberry in 2011. The mobile application provides tools for pre-screening, assessment of eligibility, and randomization of patients. Since the release of ATACH-II mobile application, the CLEAR-IVH (Clot Lysis Evaluating Accelerated Resolution of Intraventricular Hemorrhage) trial investigators have also adopted such a mobile application. The video-conferencing capabilities of the most recent mobile devices open up additional opportunities to involve central coordinating centers in the recruitment process in real time.

  5. Topology optimization of metallic devices for microwave applications

    Aage, Niels; Mortensen, Asger; Sigmund, Ole

    2010-01-01

    is the skin depth, which calls for highly refined meshing in order to capture the physics. The skin depth problem has therefore prohibited the application of topology optimization to this class of problem. We present a design parameterization that remedies these numerical issues, by the interpolation...

  6. Optoelectronic and Photovoltaic Properties of the Air-Stable Organohalide Semiconductor (CH 3 NH 3 ) 3 Bi 2 I 9

    Abulikemu, Mutalifu; Ould-Chikh, Samy; Miao, Xiaohe; Alarousu, Erkki; Banavoth, Murali; Ngongang Ndjawa, Guy Olivier; Barbe, Jeremy; El Labban, Abdulrahman; Amassian, Aram; Del Gobbo, Silvano

    2016-01-01

    Lead halide perovskite materials have shown excellent optoelectronic as well as photovoltaic properties. However, the presence of lead and the chemical instability relegate lead halide perovskites to research applications only. Here, we investigate

  7. Optoelectronic fowl adenovirus detection based on local electric field enhancement on graphene quantum dots and gold nanobundle hybrid.

    Ahmed, Syed Rahin; Mogus, Jack; Chand, Rohit; Nagy, Eva; Neethirajan, Suresh

    2018-04-30

    An optoelectronic sensor is a rapid diagnostic tool that allows for an accurate, reliable, field-portable, low-cost device for practical applications. In this study, template-free In situ gold nanobundles (Au NBs) were fabricated on an electrode for optoelectronic sensing of fowl adenoviruses (FAdVs). Au NB film was fabricated on carbon electrodes working area using L(+) ascorbic acid, gold chroloauric acid and poly-l-lysine (PLL) through modified layer-by-layer (LbL) method. A scanning electron microscopic (SEM) image of the Au NBs revealed a NB-shaped Au structure with many kinks on its surface, which allow local electric field enhancement through light-matter interaction with graphene quantum dots (GQDs). Here, GQDs were synthesized through an autoclave-assisted method. Characterization experiments revealed blue-emissive, well-dispersed GQDs that were 2-3nm in size with the fluorescence emission peak of GQDs located at 405nm. Both Au NBs and GQDs were conjugated with target FAdVs specific antibodies that bring them close to each other with the addition of target FAdVs through antibody-antigen interaction. At close proximity, light-matter interaction between Au NBs and QDs produces a local electric signal enhancement under Ultraviolet-visible (UV-visible) light irradiation that allows the detection of very low concentrations of target virus even in complex biological media. A proposed optoelectronic sensor showed a linear relationship between the target FAdVs and the electric signal up to 10 Plaque forming unit (PFU)/mL with a limit of detection (LOD) of 8.75 PFU/mL. The proposed sensing strategy was 100 times more sensitive than conventional ELISA method. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. TIDE: Lightweight Device Composition for Enhancing Tabletop Environments with Smartphone Applications

    Sicard, Leo; Tabard, Aurelien; Ramos, Juan David Hincapie

    2013-01-01

    platforms have to be re-developed. At the same time, smartphones are pervasive computers that users carry around and with a large pool of applications. This paper presents TIDE, a lightweight device composition middleware to bring existing smartphone applica- tions onto the tabletop. Through TIDE......, applications running on the smartphone are displayed on the tabletop computer, and users can interact with them through the tabletop’s interactive surface. TIDE contributes to the areas of device compo- sition and tabletops by providing an OS-level middleware that is transparent to the smartphone applications...

  9. Applied superconductivity. Handbook on devices and applications. Vol. 1 and 2

    Seidel, Paul (ed.) [Jena Univ. (Germany). Inst. fuer Festkoerperphysik, AG Tieftemperaturphysik

    2015-07-01

    The both volumes contain the following 12 chapters: 1. Fundamentals; 2. Superconducting Materials; 3. Technology, Preparation, and Characterization (bulk materials, thin films, multilayers, wires, tapes; cooling); 4, Superconducting Magnets; 5. Power Applications (superconducting cables, superconducting current leads, fault current limiters, transformers, SMES and flywheels; rotating machines; SmartGrids); 6. Superconductive Passive Devices (superconducting microwave components; cavities for accelerators; superconducting pickup coils; magnetic shields); 7. Applications in Quantum Metrology (superconducting hot electron bolometers; transition edge sensors; SIS Mixers; superconducting photon detectors; applications at Terahertz frequency; detector readout); 8. Superconducting Radiation and Particle Detectors; 9. Superconducting Quantum Interference (SQUIDs); 10. Superconductor Digital Electronics; 11. Other Applications (Josephson arrays as radiation sources. Tunable microwave devices) and 12. Summary and Outlook (of the superconducting devices).

  10. Applied superconductivity. Handbook on devices and applications. Vol. 1 and 2

    Seidel, Paul

    2015-01-01

    The both volumes contain the following 12 chapters: 1. Fundamentals; 2. Superconducting Materials; 3. Technology, Preparation, and Characterization (bulk materials, thin films, multilayers, wires, tapes; cooling); 4, Superconducting Magnets; 5. Power Applications (superconducting cables, superconducting current leads, fault current limiters, transformers, SMES and flywheels; rotating machines; SmartGrids); 6. Superconductive Passive Devices (superconducting microwave components; cavities for accelerators; superconducting pickup coils; magnetic shields); 7. Applications in Quantum Metrology (superconducting hot electron bolometers; transition edge sensors; SIS Mixers; superconducting photon detectors; applications at Terahertz frequency; detector readout); 8. Superconducting Radiation and Particle Detectors; 9. Superconducting Quantum Interference (SQUIDs); 10. Superconductor Digital Electronics; 11. Other Applications (Josephson arrays as radiation sources. Tunable microwave devices) and 12. Summary and Outlook (of the superconducting devices).

  11. The role of EEPROM devices in upcoming ISDN applications

    Nette, Herbert L.

    1991-02-01

    Integrated Services Digital Network (ISDN) equipments are rapidly becoming a major market for semiconductor chips. Although at first glance this growing market appears to be geared at logic chips, nonvolatile memories represent important support chips and will become a significant segment of this market. Challenges in these applications consist in operating EEPROMs at lower voltages and lower power and embedding them on ever more complex communications processor chips.

  12. Magnetic energy storage devices for small scale applications

    Kumar, B.

    1992-01-01

    This paper covers basic principles of magnetic energy storage, structure requirements and limitations, configurations of inductors, attributes of high-T c superconducting materials including thermal instabilities, a relative comparison with the state-of-the-art high energy density power sources, and refrigeration requirements. Based on these fundamental considerations, the design parameters of a micro superconducting magnetic energy unit for Air Force applications is presented and discussed

  13. Filtration of nanoparticles - Application to respiratory protecting devices

    Brochot, C.

    2012-01-01

    This study aims to determine how the respiratory protective devices (RPD), whose performances are qualified for particles above 100 nm, are effective for nanoparticles. Indeed, if the use of a collective filtration is inadequate, wearing a RPD is the last protection recommended. A literature review showed that no research concerned the effectiveness of half-masks for nanoparticles. The test bench ETNA has been sized and built to overcome these lacks. Two half masks were tested according to different configurations: constant flow rate and cyclic flow rate (average flow of 84 L /min), particle size (from 5 to 100 nm), positions of the mask (sealed, usual, or with calibrated leaks). The results show that, since the RPD contain high efficiency filter media (without charged fibers) for the most penetrating particle size (100 nm - 300 nm), the RPD is more efficient for nanoparticles. Furthermore, the results obtained in the presence of actual and calibrated leaks, highlighted the importance of face seal leakages in determining the performance of RPD. A model for calculating the protection factor was established based on the balance between the airflow through the filter and the leak. This model was validated using measurements obtained in the presence of calibrated leaks, and applied for the analysis of our results in usual position. (author)

  14. Future device applications of low-dimensional carbon superlattice structures

    Bhattacharyya, Somnath

    2005-03-01

    We observe superior transport properties in low-dimensional amorphous carbon (a-C) and superlattice structures fabricated by a number of different techniques. Low temperature conductivity of these materials is explained using argument based on the crossover of dimensionality of weak localization and electron-electron interactions along with a change of sign of the magneto-resistance. These trends are significantly different from many other well characterized ordered or oriented carbon structures, and, show direct evidence of high correlation length, mobility and an effect of the dimensionality in low-dimensional a-C films. We show routes to prepare bespoke features by tuning the phase relaxation time in order to make high-speed devices over large areas. The artificially grown multi-layer superlattice structures of diamond-like amorphous carbon films show high-frequency resonance and quantum conductance suggesting sufficiently high values of phase coherence length in the present disordered a-C system that could lead to fast switching multi-valued logic.

  15. Proceedings of the thirty fifth international conference on contemporary trends in optics and optoelectronics: conference digest - extended abstracts

    2011-01-01

    Optics and optoelectronics are indispensable in all spheres of human activity, ranging from day to day needs to advanced scientific and technological pursuits and their applications for the benefit of the society. This conference covers the following topics: adaptive optics, biomedical optics and imaging, classical and quantum optics, fibre optics, optics for space applications, optical metrology and NDT, optical information processing, optical and optoelectronic materials. Papers relevant to INIS are indexed separately

  16. Digital optical computers at the optoelectronic computing systems center

    Jordan, Harry F.

    1991-01-01

    The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

  17. Optoelectronic analogue signal transfer for LHC detectors, 1991

    Dowell, John D; Homer, R J; Jovanovic, P; Kenyon, I; Staley, R; Webster, K; Da Via, C; Feyt, J; Nappey, P; Stefanini, G; Dwir, B; Reinhart, F K; Davies, J; Green, N; Stewart, W; Young, T; Hall, G; Akesson, T; Jarlskog, G; Kröll, S; Nickerson, R; Jaroslawski, S; CERN. Geneva. Detector Research and Development Committee

    1991-01-01

    We propose to study and develop opto-electronic analogue front-ends based on electro-optic intensity modulators. These devices translate the detector electrical analogue signals into optical signals which are then transferred via optical fibres to photodetector receivers at the remote readout. In comparison with conventional solutions based on copper cables, this technique offers the advantages of high speed, very low power dissipation and transmission losses, compactness and immunity to electromagnetic interference. The linearity and dynamic range that can be obtained are more than adequate for central tracking detectors, and the proposed devices have considerable radiation- hardness capabilities. The large bandwidth and short transit times offer possibilities for improved triggering schemes. The proposed R&D programme is aimed at producing multi-channel "demonstrator" units for evaluation both in laboratory and beam tests. This will allow the choice of the most effective technology. A detailed study wil...

  18. Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

    Fernandes Cauduro, André Luis; Fabrim, Zacarias Eduardo; Ahmadpour, Mehrad

    2015-01-01

    In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of the reported films by increasing the oxygen partial pressure from 1.00 ? 10?3 mbar to 1.37 ? 10?3 mbar during...... significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generat- ing a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic...... properties in these films holds strong promise for their implementation in optoelectronic devices....

  19. Organic bistable light-emitting devices

    Ma, Liping; Liu, Jie; Pyo, Seungmoon; Yang, Yang

    2002-01-01

    An organic bistable device, with a unique trilayer structure consisting of organic/metal/organic sandwiched between two outmost metal electrodes, has been invented. [Y. Yang, L. P. Ma, and J. Liu, U.S. Patent Pending, U.S. 01/17206 (2001)]. When the device is biased with voltages beyond a critical value (for example 3 V), the device suddenly switches from a high-impedance state to a low-impedance state, with a difference in injection current of more than 6 orders of magnitude. When the device is switched to the low-impedance state, it remains in that state even when the power is off. (This is called "nonvolatile" phenomenon in memory devices.) The high-impedance state can be recovered by applying a reverse bias; therefore, this bistable device is ideal for memory applications. In order to increase the data read-out rate of this type of memory device, a regular polymer light-emitting diode has been integrated with the organic bistable device, such that it can be read out optically. These features make the organic bistable light-emitting device a promising candidate for several applications, such as digital memories, opto-electronic books, and recordable papers.

  20. High Temperature Electro-Mechanical Devices For Nuclear Applications

    Robertson, D.

    2010-01-01

    Nuclear power plants require a number of electro-mechanical devices, for example, Control Rod Drive Mechanisms (CRDM's) to control the raising and lowering of control rods and Reactor Coolant Pumps (RCP's) to circulate the primary coolant. There are potential benefits in locating electro-mechanical components in areas of the plant with high ambient temperatures. One such benefit is the reduced need to make penetrations in pressure vessels leading to simplified plant design and improved inherent safety. The feature that limits the ambient temperature at which most electrical machines may operate is the material used for the electrical insulation of the machine windings. Conventional electrical machines generally use polymer-based insulation that limits the ambient temperature they can operate in to below 200 degrees Celsius. This means that when a conventional electrical machine is required to operate in a hot area it must be actively cooled necessitating additional systems. This paper presents data gathered during investigations undertaken by Rolls-Royce into the design of high temperature electrical machines. The research was undertaken at Rolls-Royce's University Technology Centre in Advanced Electrical Machines and Drives at Sheffield University. Rolls- Royce has also been investigating high temperature wire and encapsulants and latterly techniques to provide high temperature insulation to terminations. Rolls-Royce used the experience gained from these tests to produce a high temperature electrical linear actuator at sizes representative of those used in reactor systems. This machine was tested successfully at temperatures equivalent to those found inside the reactor vessel of a pressurised water reactor through a full series of operations that replicated in service duty. The paper will conclude by discussing the impact of the findings and potential electro-mechanical designs that may utilise such high temperature technologies. (authors)