WorldWideScience

Sample records for optical semiconductor sources

  1. Performance improvement of optical semiconductor sources

    El Tokhy, M.E.M.E

    2009-01-01

    This thesis has been concerned with a detailed study of nano-technology quantum sources. From these sources, quantum cascaded laser (QCLs) and quantum dot lasers (QDs), are studied theoretically. Block diagram models based on VisSim environment in junction with mathematical models are developed to analyze these kinds of optical sources. The mathematical model is derived to express explicitly the performance of the device, while a block diagram model is implemented which implicitly describe the same device. By using these mathematical models, new expressions are obtained. Accurate and efficient modeling of these sources is being increasingly important in the design and optimization of optical integrated circuits and circuit component. In the case of QCLs, the diagram is used to calculate its characteristics such as potential voltage, output optical power, current, threshold current density, slope efficiency, differential efficiency, and optical gain of these devices. Furthermore, the effect of each parameter of the QCLs, such as number of periods; N p , operating temperature; T, waveguide losses; α w , mirror losses; α m , on its performance are discussed in details. To demonstrate these effects further, the changes in three dimensional are plotted. In another mean, improving the lasing properties of the QCLs through both block diagram and mathematical models is the main scope in this thesis. In order to enhance the performance of the underlined device, mathematical model parameters are tuned to obtain the optimum behavior. Additionally, it is important to model and analyze the effects of these physical parameters on the performance of QCLs. These parameters play the central role in specifying the optical characteristics of the considered laser source. Proposed relation that linked emitted power with QCLs parameters is deduced. Moreover, it is important to have a large amount of radiated power, where increasing the amount of radiated power represents the main

  2. Semiconductor Optics

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  3. Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

    Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

    2011-02-28

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

  4. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    Cocquelin, B.

    2009-02-01

    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  5. Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors

    Nashy, El-Shahat H. A.; Al-Ashkar, Emad; Abdel Moez, A.

    2012-02-01

    Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows.

  6. Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors.

    Nashy, El-Shahat H A; Al-Ashkar, Emad; Moez, A Abdel

    2012-02-01

    Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows. Copyright © 2011 Elsevier B.V. All rights reserved.

  7. Optically coupled semiconductor device

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  8. Frequency-swept laser light source at 1050 nm with higher bandwidth due to multiple semiconductor optical amplifiers in series

    Marschall, Sebastian; Thrane, Lars; Andersen, Peter E.

    2009-01-01

    We report on the development of an all-fiber frequency-swept laser light source in the 1050 nm range based on semiconductor optical amplifiers (SOA) with improved bandwidth due to multiple gain media. It is demonstrated that even two SOAs with nearly equal gain spectra can improve the performance...

  9. Terahertz semiconductor nonlinear optics

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  10. Optical cavity furnace for semiconductor wafer processing

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  11. Terahertz Nonlinear Optics in Semiconductors

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  12. Compound semiconductor optical waveguide switch

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  13. Modeling of semiconductor optical amplifiers

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  14. Quantum optics with semiconductor nanostructures

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  15. Optical orientation in ferromagnet/semiconductor hybrids

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  16. Optical orientation in ferromagnet/semiconductor hybrids

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  17. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  18. Optical Regeneration and Noise in Semiconductor Devices

    Öhman, Filip

    2005-01-01

    In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...

  19. Efficient semiconductor multicycle terahertz pulse source

    Nugraha, P. S.; Krizsán, G.; Polónyi, Gy; Mechler, M. I.; Hebling, J.; Tóth, Gy; Fülöp, J. A.

    2018-05-01

    Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons.

  20. All optical regeneration using semiconductor devices

    Mørk, Jesper; Öhman, Filip; Tromborg, Bjarne

    All-optical regeneration is a key functionality for implementing all-optical networks. We present a simple theory for the bit-error-rate in links employing all-optical regenerators, which elucidates the interplay between the noise and and nonlinearity of the regenerator. A novel device structure ...... is analyzed, emphasizing general aspects of active semiconductor waveguides....

  1. Optical coherent control in semiconductors

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  2. Semiconductor devices for all-optical regeneration

    Öhman, Filip; Bischoff, Svend; Tromborg, Bjarne

    2003-01-01

    We review different implementations of semiconductor devices for all-optical regeneration. A general model will be presented for all-optical regeneration in fiber links, taking into consideration the trade-off between non-linearity and noise. Furthermore we discuss a novel regenerator type, based...

  3. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    Yvind, Kresten

    2003-01-01

    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

  4. BROADBAND TRAVELLING WAVE SEMICONDUCTOR OPTICAL AMPLIFIER

    2010-01-01

    Broadband travelling wave semiconductor optical amplifier (100, 200, 300, 400, 800) for amplification of light, wherein the amplifier (100, 200, 300, 400, 800) comprises a waveguide region (101, 201, 301, 401, 801) for providing confinement of the light in transverse directions and adapted...

  5. Optical Properties of Semiconductor Quantum Dots

    Perinetti, U.

    2011-01-01

    This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots

  6. Single photon sources with single semiconductor quantum dots

    Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

    2014-04-01

    In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

  7. Optical Biosensors Based on Semiconductor Nanostructures

    Raúl J. Martín-Palma

    2009-06-01

    Full Text Available The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented.

  8. Optical characterization of semiconductors infrared, Raman, and photoluminescence spectroscopy

    Perkowitz, Sidney

    1993-01-01

    This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial sci

  9. Optically pumped semiconductor lasers for atomic and molecular physics

    Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

    2015-03-01

    Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

  10. The Dynamics of Semiconductor Optical Amplifiers – Modeling and Applications

    Mørk, Jesper; Nielsen, Mads Lønstrup; Berg, Tommy Winther

    2003-01-01

    The importance of semiconductor optical amplifiers is discussed. A semiconductor optical amplifier (SOA) is a semiconductor laser with anti-reflection coated facets that amplifies an injected light signal by means of stimulated emission. SOAs have a number of unique properties that open up...

  11. Quantum theory of the optical and electronic properties of semiconductors

    Haug, Hartmut

    2009-01-01

    This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

  12. Optical double-locked semiconductor lasers

    AlMulla, Mohammad

    2018-06-01

    Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

  13. CO2 laser pulse switching by optically excited semiconductors

    Silva, V.L. da.

    1986-01-01

    The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

  14. Bit rate and pulse width dependence of four-wave mixing of short optical pulses in semiconductor optical amplifiers

    Diez, S.; Mecozzi, A.; Mørk, Jesper

    1999-01-01

    We investigate the saturation properties of four-wave mixing of short optical pulses in a semiconductor optical amplifier. By varying the gain of the optical amplifier, we find a strong dependence of both conversion efficiency and signal-to-background ratio on pulse width and bit rate....... In particular, the signal-to-background ratio can be optimized for a specific amplifier gain. This behavior, which is coherently described in experiment and theory, is attributed to the dynamics of the amplified spontaneous emission, which is the main source of noise in a semiconductor optical amplifier....

  15. Semiconductor quantum optics with tailored photonic nanostructures

    Laucht, Arne

    2011-01-01

    This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings (ΔE ∝5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of single photon emission into the waveguide. The results obtained during the course of this thesis contribute significantly to

  16. Semiconductor quantum optics with tailored photonic nanostructures

    Laucht, Arne

    2011-06-15

    This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings ({delta}E<{proportional_to}5 meV) and a multi-exciton-based, Auger-like process for larger detunings ({delta}E >{proportional_to}5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of

  17. Semiconductor light sources fabricated by vapor phase epitaxial regrowth

    Powazinik, W.; Olshansky, R.; Meland, E.; Lauer, R.B.

    1986-01-01

    An extremely versatile technique for the fabrication of semiconductor light sources is described. The technique which is based on the halide vapor phase regrowth (VPR) of InP on channeled and selectively etched InGaAsP/InP double heterostructure material, results in a buried heterostructure (BH) index-guided VPR-BH diode laser structure which can be optimized for a number of different types of semiconductor light sources. The conditions and parameters associated with the halide VPR process are given, and the properties of the regrown InP are reported. The processing and characterization of high-frequency lasers with 18-GHz bandwidths and high-power lasers with cw single-spatial-mode powers of 60 mW are described. Additionally, the fabrication and characterization of superluminescent LEDs based on the this basic VPR-BH structure are described. These LEDs are capable of coupling more than 80 μW of optical power into a single-mode fiber at 100 mA, and can couple as much as 8 μW of optical power into a single-mode fiber at drive currents as low as 20 mA

  18. Metal-coated semiconductor nanostructures and simulation of photon extraction and coupling to optical fibers for a solid-state single-photon source

    Suemune, Ikuo; Nakajima, Hideaki; Liu, Xiangming; Odashima, Satoru; Asano, Tomoya; Iijima, Hitoshi; Huh, Jae-Hoon; Idutsu, Yasuhiro; Sasakura, Hirotaka; Kumano, Hidekazu

    2013-01-01

    We have realized metal-coated semiconductor nanostructures for a stable and efficient single-photon source (SPS) and demonstrated improved single-photon extraction efficiency by the selection of metals and nanostructures. We demonstrate with finite-difference time-domain (FDTD) simulations that inclination of a pillar sidewall, which changes the structure to a nanocone, is effective in improving the photon extraction efficiency. We demonstrate how such nanocone structures with inclined sidewalls are fabricated with reactive ion etching. With the optimized design, a photon extraction efficiency to outer airside as high as ∼97% generated from a quantum dot in a nanocone structure is simulated, which is the important step in realizing SPS on-demand operations. We have also examined the direct contact of such a metal-embedded nanocone structure with a single-mode fiber facet as a simple and practical method for preparing fiber-coupled SPS and demonstrated practical coupling efficiencies of ∼16% with FDTD simulation. (paper)

  19. Optical properties of quasiperiodically arranged semiconductor nanostructures

    Werchner, Marco

    2009-12-18

    This work consists of two parts which are entitled ''One-Dimensional Resonant Fibonacci Quasicrystals'' and ''Resonant Tunneling of Light in Silicon Nanostructures''. A microscopic theory has been applied to investigate the optical properties of the respective semiconductor nanostructures. The studied one-dimensional resonant Fibonacci quasicrystals consist of GaAs quantum wells (QW) that are separated by either a large spacer L or a small one S. These spacers are arranged according to the Fibonacci sequence LSLLSLSL.. The average spacing satisfies a generalized Bragg condition with respect to the 1s-exciton resonance of the QWs. A theory, that makes use of the transfer-matrix method and that allows for the microscopic description of many-body effects such as excitation-induced dephasing caused by the Coulomb scattering of carriers, has been applied to compute the optical spectra of such structures. A pronounced sharp reflectivity minimum is found in the vicinity of the heavy-hole resonance both in the measured as well as in the calculated linear 54-QW spectra. Specifically, the influence of the carrier density, of the QW arrangement, of a detuning away from the exact Bragg condition, of the average spacing as well as of the ratio of the optical path lengths of the large and small spacers L and S, respectively, and of the QW number on the optical properties of the samples have been studied. Additionally, self-similarity among reflection spectra corresponding to different QW numbers that exceed a Fibonacci number by one is observed, which identifies certain spectral features as true fingerprints of the Fibonacci spacing. In the second part, resonant tunneling of light in stacked structures consisting of alternating parallel layers of silicon and air have been studied theoretically.Light may tunnel through the air barrier due to the existence of evanescent waves inside the air layers if the neighboring silicon layer is close

  20. Semiconductor processing apparatus with compact free radical source

    Kovalgin, Alexeij Y.; Aarnink, Antonius A.I.

    2013-01-01

    A semiconductor processing apparatus (1), comprising: a substrate processing chamber (158), defining a substrate support location (156) at which a generally planar semiconductor substrate (300) is supportable; and at least one free radical source (200), including: a precursor gas source (250); an

  1. All-optical packet envelope detection using a slow semiconductor saturable absorber gate and a semiconductor optical amplifier

    Porzi, C.; Fresi, F.; Poti, L.; Bogoni, A.; Guina, M.; Orsila, L.; Okhotnikov, O.; Calabretta, N.

    2008-01-01

    Abstract—We propose a simple and effective scheme for alloptical packet envelope detection (AO-PED), exploiting a slow saturable absorber-based vertical cavity semiconductor gate and a semiconductor optical amplifier. A high extinction ratio of 15 dB was measured for the recovered envelope signal.

  2. Semiconductor optical amplifier-based all-optical gates for high-speed optical processing

    Stubkjær, Kristian

    2000-01-01

    Semiconductor optical amplifiers are useful building blocks for all-optical gates as wavelength converters and OTDM demultiplexers. The paper reviews the progress from simple gates using cross-gain modulation and four-wave mixing to the integrated interferometric gates using cross-phase modulation....... These gates are very efficient for high-speed signal processing and open up interesting new areas, such as all-optical regeneration and high-speed all-optical logic functions...

  3. Optical cavity cooling of mechanical modes of a semiconductor nanomembrane

    Usami, Koji; Naesby, A.; Bagci, Tolga

    2012-01-01

    Mechanical oscillators can be optically cooled using a technique known as optical-cavity back-action. Cooling of composite metal–semiconductor mirrors, dielectric mirrors and dielectric membranes has been demonstrated. Here we report cavity cooling of mechanical modes in a high-quality-factor and......Mechanical oscillators can be optically cooled using a technique known as optical-cavity back-action. Cooling of composite metal–semiconductor mirrors, dielectric mirrors and dielectric membranes has been demonstrated. Here we report cavity cooling of mechanical modes in a high...

  4. Optically pumped terahertz sources

    ZHONG Kai; SHI Wei; XU DeGang; LIU PengXiang; WANG YuYe; MEI JiaLin; YAN Chao; FU ShiJie; YAO JianQuan

    2017-01-01

    High-power terahertz (THz) generation in the frequency range of0.1-10 THz has been a fast-developing research area ever since the beginning of the THz boom two decades ago,enabling new technological breakthroughs in spectroscopy,communication,imaging,etc.By using optical (laser) pumping methods with near-or mid-infrared (IR) lasers,flexible and practical THz sources covering the whole THz range can be realized to overcome the shortage of electronic THz sources and now they are playing important roles in THz science and technology.This paper overviews various optically pumped THz sources,including femtosecond laser based ultrafast broadband THz generation,monochromatic widely tunable THz generation,single-mode on-chip THz source from photomixing,and the traditional powerful THz gas lasers.Full descriptions from basic principles to the latest progress are presented and their advantages and disadvantages are discussed as well.It is expected that this review gives a comprehensive reference to researchers in this area and additionally helps newcomers to quickly gain understanding of optically pumped THz sources.

  5. Effects of Coupling Lens on Optical Refrigeration of Semiconductors

    Kai, Ding; Yi-Ping, Zeng

    2008-01-01

    Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Optical trapping with Bessel beams generated from semiconductor lasers

    Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U

    2014-01-01

    In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

  7. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  8. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.

    2000-01-01

    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  9. Optically induced Hall effect in semiconductors

    Idrish Miah, M; Gray, E Mac A, E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2009-03-01

    We describe an experiment which investigates the effect of a longitudinal electric field on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a Hall voltage resulting from nonequilibrium magnetization induced by the spin-carrier electrons accumulating at the transverse boundaries of the sample as a result of asymmetries in scattering for spin-up and spin-down electrons in the presence of spin-orbit interaction. It is found that the effect depends on the longitudinal electric field and doping density as well as on temperature. The results are presented by discussing the dominant spin relaxation mechanisms in semiconductors.

  10. Quantum Dot Semiconductor Optical Amplifiers - Physics and Applications

    Berg, Tommy Winther

    2004-01-01

    This thesis describes the physics and applications of quantum dot semiconductor optical amplifiers based on numerical simulations. These devices possess a number of unique properties compared with other types of semiconductor amplifiers, which should allow enhanced performance of semiconductor...... respects is comparable to those of fiber amplifiers. The possibility of inverting the optically active states to a large degree is essential in order to achieve this performance. Optical signal processing through cross gain modulation and four wave mixing is modeled and described. For both approaches...... and QW devices and to experiments on quantum dot amplifiers. These comparisons outline the qualitative differences between the different types of amplifiers. In all cases focus is put on the physical processes responsible the differences....

  11. Return-map for semiconductor lasers with optical feedback

    Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.

    1999-01-01

    It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation of the phe......It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...

  12. Integrated semiconductor twin-microdisk laser under mutually optical injection

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen, E-mail: yzhuang@semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  13. Hyperentangled photon sources in semiconductor waveguides

    Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei

    2014-01-01

    We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering...

  14. Quantum confined laser devices optical gain and recombination in semiconductors

    Blood, Peter

    2015-01-01

    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  15. 2R Regeneration in Concatenated Semiconductor Optical Amplifiers and Electroabsorbers

    Christiansen, Lotte Jin; Xu, Lin; Yvind, Kresten

    2004-01-01

    We present a novel 2R regenerator with a large level separation and steep step a sharp, adjustable threshold based on concatenated semiconductor optical amplifiers and electroabsorbers. We demonstrate demonstrate improvements in both extinction-ratio and BER sensitivity atfor a 10 Gb/s NRZ signal....

  16. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    Weiss, Shimon [Pinole, CA; Schlamp, Michael C [Plainsboro, NJ; Alivisatos, A Paul [Oakland, CA

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  17. Nonlinear optical studies in semiconductor-doped glasses under ...

    Abstract. Nonlinear optical studies in semiconductor-doped glasses (SDGs) are per- formed under femtosecond laser pulse excitation. Z-scan experiments with 800 nm wave- length pulses are used to excite SDG samples in the resonance and non-resonance regimes. Schott colour glass filter OG 515 shows stronger ...

  18. Ultrafast Dynamics of Quantum-Dot Semiconductor Optical Amplifiers

    Poel, Mike van der; Hvam, Jørn Märcher

    2007-01-01

    We report on a series of experiments on the dynamical properties of quantum-dot semiconductor optical amplifiers. We show how the amplifier responds to one or several ultrafast (170 fs) pulses in rapid succession and our results demonstrate applicability and ultimate limitations to application...

  19. Low-frequency active surface plasmon optics on semiconductors

    Gómez Rivas, J.; Kuttge, M.; Kurz, H.; Haring Bolivar, P.; Sánchez-Gil, J.A.

    2006-01-01

    A major challenge in the development of surface plasmon optics or plasmonics is the active control of the propagation of surface plasmon polaritons (SPPs). Here, we demonstrate the feasibility of low-frequency active plasmonics using semiconductors. We show experimentally that the Bragg scattering

  20. Development of integrated semiconductor optical sensors for functional brain imaging

    Lee, Thomas T.

    Optical imaging of neural activity is a widely accepted technique for imaging brain function in the field of neuroscience research, and has been used to study the cerebral cortex in vivo for over two decades. Maps of brain activity are obtained by monitoring intensity changes in back-scattered light, called Intrinsic Optical Signals (IOS), that correspond to fluctuations in blood oxygenation and volume associated with neural activity. Current imaging systems typically employ bench-top equipment including lamps and CCD cameras to study animals using visible light. Such systems require the use of anesthetized or immobilized subjects with craniotomies, which imposes limitations on the behavioral range and duration of studies. The ultimate goal of this work is to overcome these limitations by developing a single-chip semiconductor sensor using arrays of sources and detectors operating at near-infrared (NIR) wavelengths. A single-chip implementation, combined with wireless telemetry, will eliminate the need for immobilization or anesthesia of subjects and allow in vivo studies of free behavior. NIR light offers additional advantages because it experiences less absorption in animal tissue than visible light, which allows for imaging through superficial tissues. This, in turn, reduces or eliminates the need for traumatic surgery and enables long-term brain-mapping studies in freely-behaving animals. This dissertation concentrates on key engineering challenges of implementing the sensor. This work shows the feasibility of using a GaAs-based array of vertical-cavity surface emitting lasers (VCSELs) and PIN photodiodes for IOS imaging. I begin with in-vivo studies of IOS imaging through the skull in mice, and use these results along with computer simulations to establish minimum performance requirements for light sources and detectors. I also evaluate the performance of a current commercial VCSEL for IOS imaging, and conclude with a proposed prototype sensor.

  1. Optical properties of semiconductors quantum microcavity structures

    Afshar, A.M.

    1996-12-01

    The principal phenomenon investigated in this thesis is vacuum Rabi coupling in semiconductor microcavity structures. In these structures quantum well excitons are embedded in a Fabry - Perot like cavity, defined by two semiconductor dielectric mirrors. In such a system the coupled exciton and cavity photon mode form a mixed - mode polariton, where on - resonance there are two branches, each having 50% exciton and 50% photon character. The separation between the upper and lower branches is a measure of the coupling strength where the strength is dependent on the exciton oscillator strength. This interaction is known as vacuum Rabi coupling, and clear anticrossing is seen when the exciton is tuned through the cavity. In our reflectivity experiments we demonstrate control of the coupling between the cavity mode and the exciton by varying temperature, applied electric or magnetic field. Modelling of the reflectivity spectra and the tuning was done using a Transfer Matrix Reflectivity (TMR) model or a linear dispersion model, where in both cases the excitons are treated as Lorentz oscillators. Temperature tuning is achieved because exciton energy decreases with temperature at a much faster rate than the cavity mode. We have demonstrated vacuum Rabi coupling of the cavity mode with both the heavy - hole and light - hole excitons. Electric field tuning is achieved via the quantum confined Stark effect which decreases the exciton energy with increasing field, whilst at the same time the cavity mode energy remains constant. A study of how the electric field reduction of exciton oscillator strength reduces the vacuum Rabi coupling strength is performed. We report the first observation in a semiconductor structure of motional narrowing, seen in both electric field and in temperature tuning experiments at high magnetic field. In magnetic field studies we show how magnetic field induced increase in exciton oscillator strength affects the vacuum Rabi coupling. We also show by

  2. Quantum theory of the optical and electronic properties of semiconductors

    Haug, Hartmut

    1990-01-01

    The current technological revolution in the development of computing devices has created a demand for a textbook on the quantum theory of the electronic and optical properties of semiconductors and semiconductor devices. This book successfully fulfills this need. Based on lectures given by the authors, it is a comprehensive introduction for researchers or graduate-level students to the subject. Certain sections can also serve as a graduate-level textbook for use in solid state physics courses or for more specialized courses. The final chapters establish a direct link to current research in sem

  3. Semiconductor nanocrystals for novel optical applications

    Moon, Jong-Sik

    Inspired by the promise of enhanced spectral response, photorefractive polymeric composites photosensitized with semiconductor nanocrystals have emerged as an important class of materials. Here, we report on the photosensitization of photorefractive polymeric composites at visible wavelengths through the inclusion of narrow band-gap semiconductor nanocrystals composed of PbS. Through this approach, internal diffraction efficiencies in excess of 82%, two-beam-coupling gain coefficients in excess of 211 cm-1, and response times 34 ms have been observed, representing some of the best figures-of-merit reported on this class of materials. In addition to providing efficient photosensitization, however, extensive studies of these hybrid composites have indicated that the inclusion of nanocrystals also provides an enhancement in the charge-carrier mobility and subsequent reduction in the photorefractive response time. Through this approach with PbS as charge-carrier, unprecedented response times of 399 micros were observed, opening the door for video and other high-speed applications. It is further demonstrated that this improvement in response time occurs with little sacrifice in photorefractive efficiency and with internal diffraction efficiencies of 72% and two- beam-coupling gain coefficients of 500 cm-1 being measured. A thorough analysis of the experimental data is presented, supporting the hypothesized mechanism of the enhanced charge mobility without the accompaniment of superfluous traps. Finally, water soluble InP/ZnS and CdSe/ZnS quantum dots interacted with CPP and Herceptin to apply them as a bio-maker. Both of quantum dots showed the excellent potential for use in biomedical imaging and drug delivery applications. It is anticipated that these approaches can play a significant role in the eventual commercialization of these classes of materials.

  4. Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.

    Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S

    2006-01-01

    Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

  5. Analytical models of optical response in one-dimensional semiconductors

    Pedersen, Thomas Garm

    2015-01-01

    The quantum mechanical description of the optical properties of crystalline materials typically requires extensive numerical computation. Including excitonic and non-perturbative field effects adds to the complexity. In one dimension, however, the analysis simplifies and optical spectra can be computed exactly. In this paper, we apply the Wannier exciton formalism to derive analytical expressions for the optical response in four cases of increasing complexity. Thus, we start from free carriers and, in turn, switch on electrostatic fields and electron–hole attraction and, finally, analyze the combined influence of these effects. In addition, the optical response of impurity-localized excitons is discussed. - Highlights: • Optical response of one-dimensional semiconductors including excitons. • Analytical model of excitonic Franz–Keldysh effect. • Computation of optical response of impurity-localized excitons

  6. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  7. Testing methodologies and systems for semiconductor optical amplifiers

    Wieckowski, Michael

    Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

  8. Semiconductor nanoparticles with spatial separation of charge carriers: synthesis and optical properties

    Vasiliev, Roman B; Dirin, Dmitry N; Gaskov, Alexander M

    2011-01-01

    The results of studies on core/shell semiconductor nanoparticles with spatial separation of photoexcited charge carriers are analyzed and generalized. Peculiarities of the electronic properties of semiconductor/semiconductor heterojunctions formed inside such particles are considered. Data on the effect of spatial separation of charge carriers on the optical properties of nanoparticles including spectral shifts of the exciton bands, absorption coefficients and electron–hole pair recombination times are presented. Methods of synthesis of core/shell semiconductor nanoparticles in solutions are discussed. Specific features of the optical properties of anisotropic semiconductor nanoparticles with the semiconductor/semiconductor junctions are noted. The bibliography includes 165 references.

  9. Optical properties of crystalline semiconductors and dielectrics

    Forouhi, A.R.; Bloomer, I.

    1988-01-01

    A new formulation for the complex index of refraction, N(E) = n(E)-ik(E), as a function of photon energy E, for crystalline semiconductors and dielectrics is developed based on our previous derivation of N(E) for amorphous materials. The extinction coefficient k(E) is deduced from a one-electron model with finite lifetime for the excited electron state. The refractive index n(E) is then derived from the Kramers-Kronig relation as the Hilbert transform of k(E). It is shown that n(∞)>1. Excellent agreement is found between our equations for n(E) and k(E) and published measured values for crystalline Si, Ge, GaP, GaAs, GaSb, InP, InAs, InSb, SiC, cubic C, and α-SiO 2 , over a wide range of energies (∼0--20 eV). Far fewer parameters, all of which have physical significance, are required and they can be determined for a particular material from the position and strength of the peaks in the k spectrum

  10. Dephasing of optically generated electron spins in semiconductors

    Idrish Miah, M.

    2010-01-01

    Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub-μs and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.

  11. Dephasing of optically generated electron spins in semiconductors

    Idrish Miah, M., E-mail: m.miah@griffith.edu.a [Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

    2010-09-13

    Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub-{mu}s and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.

  12. Optical properties of the semiconductor quantum structure

    Haratizadeh, H.; Holtz, P.O.; Monemar, B.; Karlsoon, K.F.; Moskalenko, E.S.; Amano, H.; Akasaki, I.; Schoenfeld, W.V.; Garcia, J.M.; Petroff, P.M.

    2004-01-01

    Optical properties of the quantum structures have been discussed with emphasize of the AlGaN/GaN multiple quantum wells and InAs/GaAs quantum dot structures. We report on a detailed study of low temperature photoluminescence in Al 0 .07Ga 0 .93 N/GaN multiple quantum wells. The structures were nominally undoped multiple quantum well grown on sapphire substrate. The structure from discrete well width variations is here resolved in photoluminescence spectra. The results demonstrate that the theoretically estimated fields in this work are consistent with the experimental spectra

  13. EDITORIAL: Extreme Ultraviolet Light Sources for Semiconductor Manufacturing

    Attwood, David

    2004-12-01

    The International Technology Roadmap for Semiconductors (ITRS) [1] provides industry expectations for high volume computer chip fabrication a decade into the future. It provides expectations to anticipated performance and requisite specifications. While the roadmap provides a collective projection of what international industry expects to produce, it does not specify the technology that will be employed. Indeed, there are generally several competing technologies for each two or three year step forward—known as `nodes'. Recent successful technologies have been based on KrF (248 nm), and now ArF (193 nm) lasers, combined with ultraviolet transmissive refractive optics, in what are known as step and scan exposure tools. Less fortunate technologies in the recent past have included soft x-ray proximity printing and, it appears, 157 nm wavelength F2 lasers. In combination with higher numerical aperture liquid emersion optics, 193 nm is expected to be used for the manufacture of leading edge chip performance for the coming five years. Beyond that, starting in about 2009, the technology to be employed is less clear. The leading candidate for the 2009 node is extreme ultraviolet (EUV) lithography, however this requires that several remaining challenges, including sufficient EUV source power, be overcome in a timely manner. This technology is based on multilayer coated reflective optics [2] and an EUV emitting plasma. Following Moore's Law [3] it is expected, for example, that at the 2009 `32 nm node' (printable patterns of 32 nm half-pitch), isolated lines with 18 nm width will be formed in resist (using threshold effects), and that these will be further narrowed to 13 nm in transfer to metalized electronic gates. These narrow features are expected to provide computer chips of 19 GHz clock frequency, with of the order of 1.5 billion transistors per chip [1]. This issue of Journal of Physics D: Applied Physics contains a cluster of eight papers addressing the critical

  14. Fiber optical laser spot microscope: A new concept for photoelectrochemical characterization of semiconductor electrodes

    Carlsson, Per; Holmström, Bertil; Uosaki, Kohei; Kita, Hideaki

    1988-01-01

    A fiber optical laser spot microscope, which allows the simultaneous measurements of photocurrent and reflected light intensity or the measurement of laser spot photocurrent under the illumination of other light sources, has been developed to study semiconductor/electrolyte interfaces. The capability of this microscope was demonstrated on as-cleaved and Pt-treated p-InSe. The Pt treatment increased the photocurrent and improved the lateral resolution due to the increase of surface reaction ra...

  15. Ultrafast all-optical signal processing using semiconductor optical amplifiers

    Li, Z.

    2007-01-01

    As the bit rate of one wavelength channel and the number of channels keep increasing in the telecommunication networks thanks to the advancement of optical transmission technologies, switching is experiencing the transition from the electrical domain to the optical domain. All-optical signal

  16. Excitonic optical bistability in n-type doped semiconductors

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  17. Optical generation and control of quantum coherence in semiconductor nanostructures

    Slavcheva, Gabriela

    2010-01-01

    The unprecedented control of coherence that can be exercised in quantum optics of atoms and molecules has stimulated increasing efforts in extending it to solid-state systems. One motivation to exploit the coherent phenomena comes from the emergence of the quantum information paradigm, however many more potential device applications ranging from novel lasers to spintronics are all bound up with issues in coherence. The book focuses on recent advances in the optical control of coherence in excitonic and polaritonic systems as model systems for the complex semiconductor dynamics towards the goal

  18. Ultrafast dynamics in semiconductor optical amplifiers and all-optical processing: Bulk versus quantum dot devices

    Mørk, Jesper; Berg, Tommy Winther; Magnúsdóttir, Ingibjörg

    2003-01-01

    We discuss the dynamical properties of semiconductor optical amplifiers and the importance for all-optical signal processing. In particular, the dynamics of quantum dot amplifiers is considered and it is suggested that these may be operated at very high bit-rates without significant patterning...

  19. Optical band gaps of organic semiconductor materials

    Costa, José C. S.; Taveira, Ricardo J. S.; Lima, Carlos F. R. A. C.; Mendes, Adélio; Santos, Luís M. N. B. F.

    2016-08-01

    UV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic π-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMO-LUMO energy gaps of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant π-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, α-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2T, α-3T, β-3T, α-4T and α-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UV-Vis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.

  20. Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots

    Klimov, V.; McBranch, D.; Schwarz, C.

    1998-08-10

    Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

  1. Optical switching of nuclear spin-spin couplings in semiconductors.

    Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

    2011-07-05

    Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear-spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings.

  2. Optical switching of nuclear spin–spin couplings in semiconductors

    Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

    2011-01-01

    Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear–spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings. PMID:21730962

  3. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  4. Internal optical bistability of quasi-two-dimensional semiconductor nanoheterostructures

    Derevyanchuk, Oleksandr V.; Kramar, Natalia K.; Kramar, Valeriy M.

    2018-01-01

    We represent the results of numerical computations of the frequency and temperature domains of possible realization of internal optical bistability in flat quasi-two-dimensional semiconductor nanoheterostructures with a single quantum well (i.e., nanofilms). Particular computations have been made for a nanofilm of layered semiconductor PbI2 embedded in dielectric medium, i.e. ethylene-methacrylic acid (E-MAA) copolymer. It is shown that an increase in the nanofilm's thickness leads to a long-wave shift of the frequency range of the manifestation the phenomenon of bistability, to increase the size of the hysteresis loop, as well as to the expansion of the temperature interval at which the realization of this phenomenon is possible.

  5. All-metal coupling and package of semiconductor laser and amplifier with optical fiber

    Xu Fenglan; Li Lina; Zhang Yueqing

    1992-01-01

    The semiconductor laser and optical amplifier made by Changchun Institute of Physics coupled with optical fiber by use of all-metal coupling are represented. The net gain of semiconductor laser amplifier with optical fiber is 14 ∼18 dB

  6. Electronic and optical properties of diamond/organic semiconductor heterostructures

    Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

    2007-07-01

    Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

  7. Semiconductor

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  8. Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

    Iglesias Olmedo, Miguel; Pang, Xiaodan; Schatz, Richard

    2016-01-01

    name “Effective Linewidth”. We derive this figure of merit analytically, explore it by numerical simulations and experimentally validate our results by transmitting a 28 Gbaud DP-16QAM over an optical link. Our investigations cover the use of semiconductor lasers both in the transmitter side...... and as a local oscillator at the receiver. The obtained results show that our proposed “effective linewidth” is easy to measure and accounts for frequency noise more accurately, and hence the penalties associated to phase noise in the received signal....

  9. Nonlinear optical effects in pure and N-doped semiconductors

    Donlagic, N.S.

    2000-01-01

    Over the last decades, the nonlinear optical properties of condensed matter systems have been an attractive and fruitful field of research. While the linear response functions of solids provide information about the elementary excitations of the systems, nonlinear optical experiments give insight into the dynamics of the fundamental many-body processes which are initiated by the external excitations. Stimulated by the experimental results, new theoretical concepts and methods have been developed in order to relate the observed phenomena to the microscopic properties of the investigated materials. The present work deals with the study of the nonlinear dynamics of the optical interband polarization in pure and n-doped semiconductors.In the first part of the thesis, the relaxation behavior of optically excited electron-hole pairs in a one-dimensional semiconductor, which are coupled to longitudinal optical phonons with an initial lattice temperature T>0, is studied with the help of quantum kinetic equations. Apart from Hartree-Fock-like Coulomb contributions, these equations contain additional Coulomb terms, the so-called vertex corrections, by which the influence of the electron-electron interaction on the electron-phonon scattering processes is taken into account. The numerical studies indicate that the vertex corrections are essential for a correct description of the excitonic dynamics.In the second part of the thesis, the attention is shifted to the characteristics of the optical response of a one-dimensional n-doped two-band semiconductor whose conduction band has been linearized with respect to the two Fermi points. Due to the linearization it is possible to calculate the linear and nonlinear response functions of the interacting electron system exactly. These response functions are then used in order to determine the linear absorption spectrum and the time-integrated signal of a degenerated four-wave-mixing experiment. It is shown that the well-known features

  10. An integrated semiconductor device enabling non-optical genome sequencing.

    Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

    2011-07-20

    The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

  11. Optical properties of hybrid semiconductor-metal structures

    Kreilkamp, L.E.; Pohl, M.; Akimov, I.A.; Yakovlev, D.R.; Bayer, M. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Belotelov, V.I.; Zvezdin, A.K. [A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, 119992 Moscow (Russian Federation); Karczewski, G.; Wojtowicz, T. [Institute of Physics, Polish Academy of Sciences, 02668 Warsaw (Poland); Rudzinski, A.; Kahl, M. [Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund (Germany)

    2012-07-01

    We study the optical properties of hybrid nanostructures comprising a semiconductor CdTe quantum well (QW) separated by a thin CdMgTe cap layer of 40 nm from a patterned gold film. The CdTe/CdMgTe QW structure with a well width of 10nm was grown by molecular beam epitaxy. The one-dimensional periodic gold films on top were made using e-beam lithography and lift-off process. The investigated structures can be considered as plasmonic crystals because the metal films attached to the semiconductor are patterned with a period in the range from 475 to 600 nm, which is comparable to the surface plasmon-polariton (SPP) wavelength. Angle dependent reflection spectra at room temperature clearly show plasmonic resonances. PL spectra taken at low temperatures of about 10 K under below- and above-barrier illumination show significant modifications compared to the unstructured QW sample. The number of emission lines and their position shift change depending on the excitation energy. The role of exciton-SPP coupling and Schottky barrier at the semiconductor-metal interface are discussed.

  12. Quantum of optical absorption in two-dimensional semiconductors.

    Fang, Hui; Bechtel, Hans A; Plis, Elena; Martin, Michael C; Krishna, Sanjay; Yablonovitch, Eli; Javey, Ali

    2013-07-16

    The optical absorption properties of free-standing InAs nanomembranes of thicknesses ranging from 3 nm to 19 nm are investigated by Fourier transform infrared spectroscopy. Stepwise absorption at room temperature is observed, arising from the interband transitions between the subbands of 2D InAs nanomembranes. Interestingly, the absorptance associated with each step is measured to be ∼1.6%, independent of thickness of the membranes. The experimental results are consistent with the theoretically predicted absorptance quantum, AQ = πα/nc for each set of interband transitions in a 2D semiconductor, where α is the fine structure constant and nc is an optical local field correction factor. Absorptance quantization appears to be universal in 2D systems including III-V quantum wells and graphene.

  13. The dynamical complexity of optically injected semiconductor lasers

    Wieczorek, S.; Krauskopf, B.; Simpson, T.B.; Lenstra, D.

    2005-01-01

    This report presents a modern approach to the theoretical and experimental study of complex nonlinear behavior of a semiconductor laser with optical injection-an example of a widely applied and technologically relevant forced nonlinear oscillator. We show that the careful bifurcation analysis of a rate equation model yields (i) a deeper understanding of already studied physical phenomena, and (ii) the discovery of new dynamical effects, such as multipulse excitability. Different instabilities, cascades of bifurcations, multistability, and sudden chaotic transitions, which are often viewed as independent, are in fact logically connected into a consistent web of bifurcations via special points called organizing centers. This theoretical bifurcation analysis has predictive power, which manifests itself in good agreement with experimental measurements over a wide range of parameters and diversity of dynamics. While it is dealing with the specific system of an optically injected laser, our work constitutes the state-of-the-art in the understanding and modeling of a nonlinear physical system in general

  14. Photonic processing and realization of an all-optical digital comparator based on semiconductor optical amplifiers

    Singh, Simranjit; Kaur, Ramandeep; Kaler, Rajinder Singh

    2015-01-01

    A module of an all-optical 2-bit comparator is analyzed and implemented using semiconductor optical amplifiers (SOAs). By employing SOA-based cross phase modulation, the optical XNOR logic is used to get an A=B output signal, where as AB¯ and A¯B> logics operations are used to realize A>B and Aoperations results along with the wide open eye diagrams are obtained. It is suggested that the proposed system would be promising in all-optical high speed networks and computing systems.

  15. Two-color mid-infrared spectroscopy of optically doped semiconductors

    Forcales, M.; Klik, M.A.J.; Vinh, N.Q.; Phillips, J.; Wells, J-P.R.; Gregorkiewicz, T.

    2003-01-01

    Optical doping is an attractive method to tailor photonic properties of semiconductor matrices for development of solid-state electroluminescent structures. For practical applications, thermal stability of emission obtained from these materials is required. Thermal processes can be conveniently investigated by two-color spectroscopy in the visible and the mid-infrared. Free-electron laser is a versatile high-brilliance source of radiation in the latter spectral range. In this contribution, we briefly review some of the results obtained recently by the two-color spectroscopy with a free-electron laser in different semiconductors optically doped with rare earth and transition metal ions. Effects leading to both enhancement and quenching of emission from optical dopants will be presented. For InP:Yb, Si:Er, and Si:Cu activation of particular optically induced non-radiative recombination paths will be shown. For Si:Er and Si:Ag, observation of a low temperature optical memory effect will be reported

  16. Resonantly enhanced nonlinear optics in semiconductor quantum wells: An application to sensitive infrared detection

    Yelin, S.F.; Hemmer, P.R.

    2002-01-01

    A novel class of coherent nonlinear optical phenomena, involving induced transparency in semiconductor quantum wells, is considered in the context of a particular application to sensitive long-wavelength infrared detection. It is shown that the strongest decoherence mechanisms can be suppressed or mitigated, resulting in substantial enhancement of nonlinear optical effects in semiconductor quantum wells

  17. Semi-analytical model of filtering effects in microwave phase shifters based on semiconductor optical amplifiers

    Chen, Yaohui; Xue, Weiqi; Öhman, Filip

    2008-01-01

    We present a model to interpret enhanced microwave phase shifts based on filter assisted slow and fast light effects in semiconductor optical amplifiers. The model also demonstrates the spectral phase impact of input optical signals.......We present a model to interpret enhanced microwave phase shifts based on filter assisted slow and fast light effects in semiconductor optical amplifiers. The model also demonstrates the spectral phase impact of input optical signals....

  18. Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

    Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

    2013-06-21

    We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

  19. Demultiplexing of OTDM-DPSK signals based on a single semiconductor optical amplifier and optical filtering

    Xu, Jing; Ding, Yunhong; Peucheret, Christophe

    2011-01-01

    We propose and demonstrate the use of a single semiconductor optical amplifier (SOA) and optical filtering to time demultiplex tributaries from an optical time division multiplexing-differential phase shift keying (OTDM-DPSK) signal. The scheme takes advantage of the fact that phase variations...... added to the target channel by cross-phase modulation from the control signal are effectively subtracted in the differential demodulation scheme employed for DPSK signals. Demultiplexing from 80 to 40 Gbit=s is demonstrated with moderate power penalty using an SOA with recovery time twice as long...

  20. Experimental and theoretical investigation of semiconductor optical amplifier (SOA) based all-optical switches

    Nielsen, Mads Lønstrup

    2004-01-01

    This thesis analyzes semiconductor optical amplifier (SOA) based all-optical switches experimentally and through numerical simulations. These devices are candidates for optical signal processing functionalities such as wavelength conversion, regeneration, and logic processing in future transparent......, consisting of an SOA and an asymmetric MZI filter, is analyzed in the small-signal regime, and the obtainable modulation bandwidth is expressed analytically. A new optical spectrum approach to small signal analysis is introduced, and is used to assess the bandwidth enhancing effect of different optical...... filters, as well the impact of the filter phase response. Experiments at 40 Gb/s verify the predictions of the small-signal analysis. Wavelength conversion is demonstrated experimentally at 40 Gb/s using a simple filtering-assisted scheme with an ultra-low optical switching energy, and up to 80 Gb...

  1. All-semiconductor metamaterial-based optical circuit board at the microscale

    Min, Li; Huang, Lirong

    2015-01-01

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing

  2. Magneto-optical transitions in multilayer semiconductor nanocrystals

    Climente, J; Jaskolski, W; Aliaga, J I

    2003-01-01

    Absorption spectra of chemically synthesized uniform and multilayer semiconductor nanocrystals in a magnetic field are investigated theoretically. The nanocrystals are modelled by spherical barrier/well potentials. The electron states are calculated within the effective mass model. A four-band k centre dot p Hamiltonian, accounting for the valence subband mixing, is used to obtain the hole states. The magneto-optical transition spectrum depends strongly on the size and composition of the nanocrystals. In the case of small uniform quantum dots, only the linear Zeeman splitting of the electron and hole energy levels is observed even for very strong magnetic fields. In larger nanocrystals, the quadratic magnetic interaction turns out to be important and the transition spectrum becomes complicated. The most complicated influence of the magnetic field is found in quantum dot-quantum well systems in which the lowest electron and hole states are localized in a thin spherical layer. It is shown that transitions that ...

  3. Isotope effects on the optical spectra of semiconductors

    Cardona, Manuel; Thewalt, M. L. W.

    2005-10-01

    Since the end of the cold war, macroscopic amounts of separated stable isotopes of most elements have been available “off the shelf” at affordable prices. Using these materials, single crystals of many semiconductors have been grown and the dependence of their physical properties on isotopic composition has been investigated. The most conspicuous effects observed have to do with the dependence of phonon frequencies and linewidths on isotopic composition. These affect the electronic properties of solids through the mechanism of electron-phonon interaction, in particular, in the corresponding optical excitation spectra and energy gaps. This review contains a brief introduction to the history, availability, and characterization of stable isotopes, including their many applications in science and technology. It is followed by a concise discussion of the effects of isotopic composition on the vibrational spectra, including the influence of average isotopic masses and isotopic disorder on the phonons. The final sections deal with the effects of electron-phonon interaction on energy gaps, the concomitant effects on the luminescence spectra of free and bound excitons, with particular emphasis on silicon, and the effects of isotopic composition of the host material on the optical transitions between the bound states of hydrogenic impurities.

  4. Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

    Raciti, R.; Bahariqushchi, R.; Summonte, C.; Aydinli, A.; Terrasi, A.; Mirabella, S.

    2017-06-01

    Determination of the optical bandgap (Eg) in semiconductor nanostructures is a key issue in understanding the extent of quantum confinement effects (QCE) on electronic properties and it usually involves some analytical approximation in experimental data reduction and modeling of the light absorption processes. Here, we compare some of the analytical procedures frequently used to evaluate the optical bandgap from reflectance (R) and transmittance (T) spectra. Ge quantum wells and quantum dots embedded in SiO2 were produced by plasma enhanced chemical vapor deposition, and light absorption was characterized by UV-Vis/NIR spectrophotometry. R&T elaboration to extract the absorption spectra was conducted by two approximated methods (single or double pass approximation, single pass analysis, and double pass analysis, respectively) followed by Eg evaluation through linear fit of Tauc or Cody plots. Direct fitting of R&T spectra through a Tauc-Lorentz oscillator model is used as comparison. Methods and data are discussed also in terms of the light absorption process in the presence of QCE. The reported data show that, despite the approximation, the DPA approach joined with Tauc plot gives reliable results, with clear advantages in terms of computational efforts and understanding of QCE.

  5. High speed all optical logic gates based on quantum dot semiconductor optical amplifiers.

    Ma, Shaozhen; Chen, Zhe; Sun, Hongzhi; Dutta, Niloy K

    2010-03-29

    A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s.

  6. Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

    Duncan, Paul G.

    2002-01-01

    Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

  7. High-performance semiconductor optical preamplifier receiver at 10 Gb/s

    Mikkelsen, Benny; Jørgensen, Carsten Gudmann; Jensen, N.

    1993-01-01

    A semiconductor optical preamplifier receiver for bitrates of 10 Gb/s is described. The measured sensitivity is -28 dBm, with a polarization sensitivity of less than 0.5 dB. Using the same transmitter and receiver configuration but with a 980-nm pumped fiber amplifier instead of the semiconductor...... amplifier, the sensitivity is -34 dBm...

  8. Nonlinear effects in ultralong semiconductor optical amplifiers for optical communications. Physics and applications

    Runge, Patrick

    2010-10-19

    The presented work discusses physical properties of ultralong semiconductor optical amplifiers (UL-SOAs) and some of their possible applications in optical communication systems. At the beginning of this thesis the analytical framework for the optical properties of UL-SOAs is presented. Based on this theoretical description, a numerical simulation model is derived used for the investigation of this thesis. To obtain from the simulation model realistic results the important properties of UL-SOAs have to be included, e.g., being the saturation of the main part of the device. In this saturated part of the device, fast intraband effects dominate over the slow interband effects. The intention of UL-SOAs is to make use of these pronounced fast intraband effects in applications. Due to the short relaxation times of the fast intraband effects, they can be used for high-speed signal processing (>20 GBaud). With the help of an additional continuous wave (CW) signal propagating with the data signal in the UL-SOA, the capability for all-optical signal processing with 100 Gbit/s on-off keying RZ-50% pseudo random bit sequence signals has been demonstrated in this thesis. With an optimised device under proper driving conditions, bit pattern effects are negligible compared to the degradation due to amplified spontaneous emission. The suppression of the bit pattern effects can be ascribed to the additional CW signal operating as a holding beam. Investigations of the UL-SOA's driving condition showed that the data signal's extinction ratio (ER) can be regenerated if the two input signals are co-polarised and the data signal has a shorter wavelength than the CW signal. These two and other driving conditions have indicated, that parametric amplification due to four-wave mixing (FWM) (Bogatov-like effect) is the reason for the ER improvement. Moreover, due to the additional CW signal, all-optical wavelength conversion (AOWC) is possible which can be combined with the ER

  9. Large area UV light source with a semiconductor cathode

    Salamov, B. G.; Ciftci, Y. Oe.; Colakoglu, K.

    2002-01-01

    The light emission (LE) in the UV and visible (blue) range generated by a planar gas discharge system (PGDS) with a semiconductor cathode (SC) are studied. New light source offer high-intensity narrow-band emission at various UV and visible wavelengths (330 - 440 nm). Spectra in N 2 is presented, as well as intensity vs pressure curves for the main peaks of the spectrum. The use of source offers several advantages: PGDS can be extremely efficient energy converters transforming and amplifying a relatively low-powered photon flux incident on the receiving surface of the SC into a flux of high-energy particles over extended areas, i.e. electron, ions, photons. Thus, extremely bright UV and visible sources can be built. LE characteristics of the space in the PGDS are complex, depending on the emitting medium and species. By using the IR light to excite the SC of the system, we have shown that the discharge light emission (DLE) of the device with the N 2 in the gap can serve as an efficient source of the UV radiation if gas pressure and electric field are sufficiently high. This is realized due to the effect of the stabilisation of the spatially homogeneous mode of the discharge in a narrow gap with a large emitting area of SC. Special features of DLE render it highly promising for the development of sources with a large area of the emitting surface, high spatial uniformity of UV radiation, and fast dynamics of these devices. This low cost, high power light sources can provide an interesting alternative to conventional UV lamps

  10. Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

    Huang, Shouting

    Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the

  11. Ultrashort pulse-propagation effects in a semiconductor optical amplifier: Microscopic theory and experiment

    Hughes, S.; Borri, P.; Knorr, A.

    2001-01-01

    We present microscopic modeling and experimental measurements of femtosecond-pulse interactions in a semiconductor optical amplifier. Two novel nonlinear propagation effects are demonstrated: pulse breakup in the gain regime and pulse compression in the transparency regime. These propagation phen...... phenomena highlight the microscopic origin and important role of adiabatic following in semiconductor optical amplifiers. Fundamental light-matter interactions are discussed in detail and possible applications are highlighted....

  12. Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

    Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)

    2016-05-03

    This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

  13. Possible power source found for fiber optic lasers

    Krupa, Tyler J.

    2000-01-01

    Scientists at the US Department of Energy's Sandia National Laboratory are researching ways to use a new semiconductor alloy, indium gallium arsenide nitride (InGaAsN), as as photovoltaic power source for lasers in fiber optics and space communication satellites. The efficiency of electricity-generating solar cells utilizing InGaAsN is predicted to be 40%-nearly twice the efficiency rate of a standard silicon solar cell. The use of InGaAsN in solar cells is a potential power source for satellites and other space systems. (AIP) (c)

  14. Acoustic charge manipulation in semiconductor nanostructures for optical applications

    Voelk, Stefan

    2010-07-30

    Within this thesis, the influence of a surface acoustic wave (SAW) on the luminescence of semiconductor nanostructures is investigated. Beginning with the physics of low-dimensional semiconductor structures, the quantum mechanical and optical properties of quantum dot (QD) systems are discussed. In particular, intrinsic parameters of QDs such as morphology, composition, strain and occupation with carriers are taken into account. Subsequently, the influence of an applied electric field and of externally induced strain are introduced. From this general approach, the discussion is focused to quantum posts (QPs) which are columnar shaped semiconductor nanostructures. In contrast to conventional self-assembled QDs, the height of the QPs can be controlled by the epitaxial growth process. Due to the adjustable height, electronic states and therefore the exciton transition energies can be tailored. Furthermore, QPs are embedded in a matrix-quantum-well structure which has important influence on the carrier dynamic if a SAW is excited on the sample. Mainly, two effects have to be considered regarding the interaction of charge carriers with SAWs: deformation potential coupling and acousto-electric coupling. For the investigated material and used SAW frequencies, acousto-electric coupling dominates the interaction between charges and SAW. For a quantum well (QW) structure, the periodic band modulation dissociates excitons into sequential stripes of electrons and holes which then are conveyed by the SAW. This so called bipolar transport or charge conveyance effect can be used to inject carriers into remote QD structures and has already been demonstrated for QD ensembles. The injection of carriers into individual quantum posts is successfully demonstrated for the first time within this work. The spectrally resolved photoluminescence (PL) data of individual QPs show an unexpected switching of PL lines which cannot be induced by varying other parameters, e.g. the laser intensity

  15. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-09-01

    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  16. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  17. ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures

    Struk Przemysław

    2014-08-01

    Full Text Available The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a~ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a~ 3 dB/cm (TE0 and TM0 modes. The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.

  18. Storage of optical excitations in colloidal semiconductor nanocrystals

    Kraus, Robert

    2009-01-01

    In the present theis it is described, how colloidal semiconductor nanocrystals can be used under influence of an electric field to store optical excitation energy at room temperature, to alter, and to supply controlledly. For this the photoluminescence emission of an ensemble of heterogeneous nanocrystals was manipulated and spectroscopically studied. The applied od-shaped particles consist of a spherical core of CdSe, on which an elongated shell of CdS is monocrystallinely be grown. The electron is in such an asymmetric geometry delocalized over the hole nanorod, whereas the hole because of the high potential barrier remains bound in the CdSe core. The wave-function overlap of the charge carriers can therefore be influenced both by the length of the nanorod and by an external electric field. In the regime of prompt fluorescence the manipulation of the charge-carrier separation by an electric field led to a suppression of the radiative recombination. As consequence a fluorescence suppression of about 40% could be observed. After the removal of the electric field the separation was reduced and the stored energy is in an fluorescence increasement directedly liberated again. The strength of the storage efficiency lies with the strength of the electric field in a linear connection. Furthermore in this time range a quantum-confined Stark effect of upt o 14 meV could be detected at room temperature, although the effect is complicated by the different orientations and sizes of the nanorods in the ensemble. Hereby it is of advance to can adress with the applied detection technique a subensemble of nanocrystals. Furthermore a significant storage of the ensmble emission by up to 100 μs conditioned by the electric electric fieldcould be demonstrated, which exceeds the fluorescence lifetime of these particles by the 10 5 fold. As also could be shown by experiments on CdSe/ZnS nanocrystals surface states play a relevent role for the emission dynamics of nanocrystals. The

  19. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  20. All-optical pulse data generation in a semiconductor optical amplifier gain controlled by a reshaped optical clock injection

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-05-01

    Wavelength-maintained all-optical pulse data pattern transformation based on a modified cross-gain-modulation architecture in a strongly gain-depleted semiconductor optical amplifier (SOA) is investigated. Under a backward dark-optical-comb injection with 70% duty-cycle reshaping from the received data clock at 10GHz, the incoming optical data stream is transformed into a pulse data stream with duty cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. The high-pass filtering effect of the gain-saturated SOA greatly improves the extinction ratio of data stream by 8dB and reduces its bit error rate to 10-12 at -18dBm.

  1. Deep ultraviolet semiconductor light sources for sensing and security

    Shatalov, Max; Bilenko, Yuri; Yang, Jinwei; Gaska, Remis

    2009-09-01

    III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) rapidly penetrate into sensing market owing to several advantages over traditional UV sources (i.e. mercury, xenon and deuterium lamps). Small size, a wide choice of peak emission wavelengths, lower power consumption and reduced cost offer flexibility to system integrators. Short emission wavelength offer advantages for gas detection and optical sensing systems based on UV induced fluorescence. Large modulation bandwidth for these devices makes them attractive for frequency-domain spectroscopy. We will review present status of DUV LED technology and discuss recent advances in short wavelength emitters and high power LED lamps.

  2. Coherent Optical Generation of a 6 GHz Microwave Signal with Directly Phase Locked Semiconductor DFB Lasers

    Gliese, Ulrik Bo; Nielsen, Torben Nørskov; Bruun, Marlene

    1992-01-01

    Experimental results of a wideband heterodyne second order optical phase locked loop with 1.5 ¿m semiconductor lasers are presented. The loop has a bandwidth of 180 MHz, a gain of 181 dBHz and a propagation delay of only 400 ps. A beat signal of 8 MHz linewidth is phase locked to become a replica...... of a microwave reference source close to carrier with a noise level of ¿125 dBc/Hz. The total phase variance of the locked carrier is 0.04 rad2 and carriers can be generated in a continuous range from 3 to 18 GHz. The loop reliability is excellent with an average time to cycle slip of 1011 seconds...

  3. Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

    Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

    1998-01-01

    The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

  4. Analog direct-modulation behavior of semiconductor laser transmitters using optical FM demodulation

    Yabre, G.S.

    1998-01-01

    In this paper, we report a theoretical investigation of the analog modulation performance of a semiconductor laser transmitter which employs the direct optical FM demodulation. This analysis is based on the rate equations in which Langevin noise functions are included. The optical FM response has

  5. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

    2000-07-01

    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  6. Optical properties of semiconductor nanostructures in magnetic field

    Grochol, M.

    2007-04-03

    In this work, the near bandgap linear optical properties of semiconductor quantum structures under applied magnetic field are investigated. First, the exciton theory is developed starting with the one-electron Hamiltonian in a crystal, continuing with the Luttinger and Bir-Pikus Hamiltonian, and ending with the exciton Hamiltonian in the envelope function approximation. Further, concentrating on the quantum well and thus assuming strong confinement in the growth direction, the motion parallel and perpendicular to the xy-plane is factorized leading to the well-known single sublevel approximation. A magnetic field perpendicular to the xy-plane is applied, and a general theorem describing the behavior of the energy eigenvalues is derived. The strain calculation within the isotropic elasticity approach is described in detail. The Schroedinger equation is solved numerically for both the full model and the factorization with artificially generated disorder potentials. Furthermore the statistical properties of the disorder in a real quantum well have been analyzed. In particular, temperature dependent photoluminescence spectra and diamagnetic shift statistics, have been compared with the experimental ones and very good agreement has been found. The second part of this thesis deals predominantly with highly symmetrical structures embedded in the quantum well: namely quantum rings and dots. First, adopting an ansatz for the wave function, the Hamiltonian matrix is derived discussing which matrix elements are non-zero according to the symmetry of the potential. Additionally, the expectation values of the current and magnetization operators are evaluated. Then, concentrating on the case of the highest (circular) symmetry, the model of zero width ring is introduced. Within this model the close relation between the oscillatory component of the exciton energy (exciton Aharonov-Bohm effect) and the persistent current is revealed. Examples for different material systems follow

  7. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-01-01

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  8. Infrared magneto-optical properties of (III, Mn)V ferromagnetic semiconductors

    Sinova, J.; Jungwirth, Tomáš; Kučera, Jan; MacDonald, A. H.

    2003-01-01

    Roč. 67, č. 23 (2003), s. 235203-1 - 235203-11 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-optical properties ac-Hall conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  9. Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

    Wang Hanchao; Huang Lirong; Shi Zhongwei

    2011-01-01

    A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. The amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown that the ASE spectrum and gain characteristic are greatly influencedby the distribution of the injection current density. By changing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled. (semiconductor devices)

  10. Fully tunable 360° microwave photonic phase shifter based on a single semiconductor optical amplifier.

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2011-08-29

    A fully tunable microwave photonic phase shifter involving a single semiconductor optical amplifier (SOA) is proposed and demonstrated. 360° microwave phase shift has been achieved by tuning the carrier wavelength and the optical input power injected in an SOA while properly profiting from the dispersion feature of a conveniently designed notch filter. It is shown that the optical filter can be advantageously employed to switch between positive and negative microwave phase shifts. Numerical calculations corroborate the experimental results showing an excellent agreement.

  11. Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

    Vincenzo Spagnolo

    2009-12-01

    Full Text Available The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques.

  12. Effect of temperature and phonons on the spectral properties of a multi-level semiconductor quantum dot single-photon source

    Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter

    2009-01-01

    Since it was realized that efficient quantum computing can be performed using single photons and standard linear optics elements, immense international research activity has been aimed at developing semiconductor quantum dot (QD) single-photon sources (SPS). In order to optimise the design of SPS...... us to study complicated multi-level QDs, not possible within the commonly used independent boson model (IBM)....

  13. Fast optical control of spin in semiconductor interfacial structures

    Nádvorník, Lukáš; Surýnek, M.; Olejník, Kamil; Novák, Vít; Wunderlich, Joerg; Trojánek, F.; Jungwirth, Tomáš; Němec, P.

    2017-01-01

    Roč. 8, č. 3 (2017), s. 1-10, č. článku 034022. ISSN 2331-7019 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G EU Projects: European Commission(XE) 610115 - SC2 Institutional support: RVO:68378271 Keywords : spintronics * optics Subject RIV: BH - Optics , Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics ) Impact factor: 4.808, year: 2016

  14. Conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation using optically injected semiconductor lasers.

    Hung, Yu-Han; Tseng, Chin-Hao; Hwang, Sheng-Kwang

    2018-06-01

    This Letter investigates an optically injected semiconductor laser for conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation. The underlying mechanism relies solely on nonlinear laser characteristics and, thus, only a typical semiconductor laser is required as the key conversion unit. This conversion can be achieved for a broadly tunable frequency range up to at least 65 GHz. After conversion, the microwave phase quality, including linewidth and phase noise, is mostly preserved, and simultaneous microwave amplification up to 23 dB is feasible.

  15. Synthesis and optical properties of novel organic-inorganic hybrid nanolayer structure semiconductors

    Zhang Sanjun; Lanty, Gaetan; Lauret, Jean-Sebastien; Deleporte, Emmanuelle; Audebert, Pierre; Galmiche, Laurent

    2009-01-01

    We report on the synthesis of some novel organic-inorganic hybrid 2D perovskite semiconductors (R-(CH 2 ) n NH 3 ) 2 PbX 4 . These semiconductors are self-assembled intercalation nanolayers and have a multi-quantum-well energy level structure. We systematically vary the characteristic of organic groups (R-(CH 2 ) n NH 3 + ) to study the relationship between their structures and the optical properties of (R-(CH 2 ) n NH 3 ) 2 PbX 4 . From optical absorption and photoluminescence spectroscopy experiments performed on series of samples, we find some trends of choosing the organic groups to improve the optical performance of (R-(CH 2 ) n NH 3 ) 2 PbX 4 . A new organic group, which allows synthesis of nanolayer perovskite semiconductors with quite high photoluminescence efficiency and better long-term stability, has been found.

  16. Digitally tunable dual wavelength emission from semiconductor ring lasers with filtered optical feedback

    Khoder, Mulham; Verschaffelt, Guy; Nguimdo, Romain Modeste; Danckaert, Jan; Leijtens, Xaveer; Bolk, Jeroen

    2013-01-01

    We report on a novel integrated approach to obtain dual wavelength emission from a semiconductor laser based on on-chip filtered optical feedback. Using this approach, we show experiments and numerical simulations of dual wavelength emission of a semiconductor ring laser. The filtered optical feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. By tuning the current injected into each of the amplifiers, we can effectively cancel the gain difference between the wavelength channels due to fabrication and material dichroism, thus resulting in stable dual wavelength emission. We also explore the accuracy needed in the operational parameters to maintain this dual wavelength emission. (letter)

  17. Performance Evaluation of Three-Level Z-Source Inverters Under Semiconductor Failure Conditions

    Gao, Feng; Loh, P.C.; Vilathgamuwa, D.M.

    2007-01-01

    reconfigure the gating signals in order to tolerate the failed semiconductor devices without significantly decreasing the ac output quality and amplitude by properly using the inherent boost characteristic of Z-source network. In addition, the Z-source dual inverters can maintain the zero common mode voltage...... under semiconductor failure conditions, which is the unique characteristic attained by the dual inverters only. Lastly, all theoretical findings are verified in PLECS simulations....

  18. Optical properties of Amorphous Semiconductors Part- II: Theory and analysis of optical properties

    Hogarth, C. A.

    1997-01-01

    The atomic and band structural properties of solids have been studied. Reflectance is concerned in spectroscopic measurement of transmission and absorption, since the incident light intensity must be corrected for the loss of light by reflection and which does not penetrate beyond the surface of the material studied.The procedure for estimating E opt and n from the absorption edge of an amorphous semiconductor has been discussed. In high refractive index glasses there is a general correlation between n and the density of the glasses and in designing a particular glass for an optical purpose this can provide a useful guide to composition. The Gladstone-Dale refractivity and the Newton-Drude refractivity have been calculated for different value of b and these relations have been tested for telluride semiconducting glasses and give reasonable agreement in estimations of n directly from the density ρ. 33 refs., 10 figs

  19. Metal-optic and Plasmonic Semiconductor-based Nanolasers

    2012-05-07

    after, 65 the sample was placed into a load-lock to deposit 5 nm of titanium dioxide. The tita - nium dioxide serves as a dielectric (although it is a...into a load-lock to deposit 5 nm of titanium dioxide. The tita - nium dioxide serves as a dielectric (although it is a large-bandgap semiconductor) to

  20. Diketopyrrolopyrrole polymers as organic semiconductors and optical materials

    2008-01-01

    The present invention relates to polymers comprising diketopyrrolopyrrole repeating units and their use as org. semiconductor in org. devices, esp. a diode, an org. field effect transistor and/or a solar cell, or a device contg. a diode and/or an org. field effect transistor, and/or a solar cell.

  1. Two-section semiconductor optical amplifier used as an efficient channel dropping node

    Jørgensen, Carsten; Storkfelt, Niels; Durhuus, T.

    1992-01-01

    High responsivity in a two-section semiconductor optical amplifier/detector, serving as a channel dropping mode is described. A simple receiver constructed using a 50 Ω amplifier with a sensitivity of -30.2 dBm at 140 Mb/s is demonstrated......High responsivity in a two-section semiconductor optical amplifier/detector, serving as a channel dropping mode is described. A simple receiver constructed using a 50 Ω amplifier with a sensitivity of -30.2 dBm at 140 Mb/s is demonstrated...

  2. NONLINEAR OPTICAL PHENOMENA: Self-reflection in a system of excitons and biexcitons in semiconductors

    Khadzhi, P. I.; Lyakhomskaya, K. D.

    1999-10-01

    The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

  3. Optical characterization of wide-gap detector-grade semiconductors

    Elshazly, E.S.

    2011-01-01

    Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd 1-x Zn x Te, x∼0.1) and Thallium Bromide (Tl Br), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and Tl Br as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064 nm wavelength and 7 ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300 K to 110 K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (Tl Br) and compared with the results for cadmium zinc telluride (CZT) in

  4. Diffusive, Structural, Optical, and Electrical Properties of Defects in Semiconductors

    Wagner, F E

    2002-01-01

    Electronic properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photoluminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect, that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness", the present approach is to use radioactive isotopes as a tracer. Moreover, the recoil energies involved in $\\beta$ and $\\gamma$-decays can be used to create intrinsic isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. The understanding and the co...

  5. FDTD simulations of near-field mediated semiconductor molecular optical properties

    Zhang, Dai; Sakrow, Marcus; Mihaljevic, Josip; Meixner, Alfred J. [Institute of Physical and Theoretical Chemistry, University Tuebingen, Auf der Morgenstelle 8, Tuebingen (Germany)

    2010-07-01

    The optical properties of molecules can be dramatically altered when they are in a close proximity of an excited metal antenna. In order to get insight into how the antenna generated near-field influences the optical properties of low quantum yield molecules, we carried out FDTD simulations of a sharp laser-illuminated Au tip approaching to a semiconductor thin film. The time-averaged field distribution between the semiconductor thin film and the tip antenna is calculated regarding to different distances. Our calculation demonstrates that the coupling between the localized plasmon at the tip apex and semiconductor polariton can be achieved building up a distance-dependent high field enhancement. Our experimental results show that such a high field strength enhances not only the excitation process by a factor of 104, but alters the radiative: non-radiative decay rate giving approx. 15 times stronger photoluminescence emission.

  6. Spectrum analysis of a voltage source converter due to semiconductor voltage drops

    Rasmussen, Tonny Wederberg; Eltouki, Mustafa

    2017-01-01

    It is known that power electronic voltage source converters are non-ideal. This paper presents a state-of-the-art review on the effect of semiconductor voltage drop on the output voltage spectrum, using single-phase H-bridge two-level converter topology with natural sampled pulse width modulation....... The paper describes the analysis of output voltage spectrum, when the semiconductor voltage drop is added. The results of the analysis of the spectral contribution including and excluding semiconductor voltage drop reveal a good agreement between the theoretical results, simulations and laboratory...

  7. Optical and optoelectronic properties of nanostructures based on wide-bandgap semiconductors

    Kalden, Joachim

    2010-01-01

    Recently, more and more research is done on nitride nanostructures in order to control the electrical and optical properties in a more sophisticated manner for optimized light-matter-interaction and extraction efficiency. In this context, the work presented in this thesis has been carried out, concentrating on two main topics. One aspect is the characterization of InGaN quantum dots (QDs). QDs possess a unique atom-like density of states for electrons, allowing for generation and manipulation of discrete electronic states. This thesis contains the analysis of QDs embedded in optoelectronic devices such as LEDs. Measurements of the electroluminescence (EL) of QD ensembles as well as single QDs are presented. Especially QD EL obtained at higher temperatures up to 150 K is a main achievement of this work. Furthermore, the photoluminescence (PL) of QD multilayer structures has been examined and discussed in detail. Experiments on the optical amplification in these multilayers have been carried out for the first time, yielding a maximum optical gain of g(max)/(mod)=50/cm. Another main aspect of solid state lighting is the efficient light extraction from light sources. For this purpose, pillar microcavities based on nitrides have been investigated. This type of optical resonator possesses a discrete optical mode structure due to the three-dimensional optical confinement in these structures. For optimal light-matter coupling conditions, this leads to an enhanced extraction efficiency. In this context, studies on QD pillar microcavities (MCs) processed by focused ion beam milling from planar MC structures are presented. After a detailed analysis of the photonic properties of these pillar MCs, a temperature-variation method to tune the cavity in resonance with QD emission is demonstrated, yielding a five-fold enhancement of the extraction efficiency. These experiments were carried out on selenide-based structures which possess a very high structural quality. An alternative

  8. Second-harmonic scanning optical microscopy of semiconductor quantum dots

    Vohnsen, B.; Bozhevolnyi, S.I.; Pedersen, K.

    2001-01-01

    Second-harmonic (SH) optical imaging of self-assembled InAlGaAs quantum dots (QD's) grown on a GaAs(0 0 1) substrate has been accomplished at room temperature by use of respectively a scanning far-field optical microscope in reflection mode and a scanning near-field optical microscope...... in transmission mode. In both cases the SH signal peaks at a pump wavelength of similar to 885 nm in correspondence to the maximum in the photoluminescence spectrum of the QD sample. SH near-field optical images exhibit spatial signal variations on a subwavelength scale that depend on the pump wavelength. We...

  9. Optical approach to thermopower and conductivity measurements in thin-film semiconductors

    Dersch, H.; Amer, N.M.

    1984-01-01

    An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented

  10. Return-map for low-frequency fluctuations in semiconductor lasers with optical feedback

    Mørk, Jesper; Sabbatier, H.; Sørensen, Mads Peter

    1999-01-01

    We show that the phenomenon of low-frequency fluctuations (LFF) , commonly observed in semiconductor lasers with optical feedback, can be explained by a simple return-map, implying a tremendous simplification in the description of the slow time-scale dynamics of the system. Experimentally observed...

  11. Self-slowdown and -advancement of fs pulses in a quantum-dot semiconductor optical amplifier

    Poel, Mike van der; Mørk, Jesper; Hvam, Jørn Märcher

    2005-01-01

    We demonstrate changes in the propagation time of 180 femtosecond pulses in a quantum-dot semiconductor optical amplifier as function of pulse input power and bias current. The results interpreted as a result of pulse reshaping by gain saturation but are also analogous to coherent population osci...

  12. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2017-01-01

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  13. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    Shen, Chao

    2017-02-07

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  14. Interband magneto-optical transitions in a layer of semiconductor nano-rings

    Voskoboynikov, O.; Wijers, Christianus M.J.; Liu, J.L.; Lee, C.P.

    2005-01-01

    We have developed a quantitative theory of the collective electromagnetic response of layers of semiconductor nano-rings. The response can be controlled by means of an applied magnetic field through the optical Aharonov-Bohm effect and is ultimately required for the design of composite materials. We

  15. Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

    Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth

    1988-01-01

    Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...

  16. Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived and ...

  17. Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...

  18. Non-equilibrium carrier efect in the optical properties of semiconductors

    Teschke, O.

    1980-01-01

    The time-resolved reflectivity of picosecond pulses from optically excited carrier distributions can provide important information about the energy relaxation rates of hot electrons and holes in semiconductors. the basic optical properties of non-equilibrium carrier distributions of GaAs are discussed. A semi-empirical analysis of the reflectivity spectrum is presented and the contributions of different effects are estimated. The results are in qualitative agreement with recent experiments employing dye lasers. (Author) [pt

  19. Transparent ceramic photo-optical semiconductor high power switches

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  20. Nuclear Electrical and Optical Studies of Hydrogen in Semiconductors.

    Dietrich, M; Toulemonde, M

    2002-01-01

    During the last years, the understanding of H and its interaction with dopant atoms in Si, Ge and III-V semiconductors has improved considerably concerning the stability of the formed complexes their structural arrangements, and the implications of this interaction on the electrical properties of the semiconductors " passivation " The perturbed angular correlation technique (PAC) has contributed to the understanding of this phenomena on an atomistic scale using radioactive isotopes provided by ISOLDE. \\\\ \\\\The aim of the proposed experiments is twofold: \\\\ \\\\\\begin{enumerate} \\item The H passivation mechanism of acceptors in GaN and ternary III-V compounds (AlGaAs, GaInP, AlGaN) shall be investigated, using the PAC probe atom $^{111m}$Cd as a 'representative' of group II-B metal acceptors. The problems addressed in these technological important systems are microscopic structure, formation and stability of the hydrogen correlated complexes as function of doping and stoichiometry (i.e. the size of the band gap)...

  1. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

    2012-01-01

    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  2. NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

    Reshak, A.H.; Khan, Saleem Ayaz; Kamarudin, H.; Bila, Jiri

    2014-01-01

    Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor

  3. NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

    Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Khan, Saleem Ayaz, E-mail: sayaz_usb@yahoo.com [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Kamarudin, H. [Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bila, Jiri [Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, 166 07 Prague 6 (Czech Republic)

    2014-01-05

    Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor.

  4. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo

    2005-01-01

    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  5. All-optical wavelength conversion at bit rates above 10 Gb/s using semiconductor optical amplifiers

    Jørgensen, Carsten; Danielsen, Søren Lykke; Stubkjær, Kristian

    1997-01-01

    This work assesses the prospects for high-speed all-optical wavelength conversion using the simple optical interaction with the gain in semiconductor optical amplifiers (SOAs) via the interband carrier recombination. Operation and design guidelines for conversion speeds above 10 Gb/s are described...... and the various tradeoffs are discussed. Experiments at bit rates up to 40 Gb/s are presented for both cross-gain modulation (XGM) and cross-phase modulation (XPM) in SOAs demonstrating the high-speed capability of these techniques...

  6. Transient optical and electrical effects in polymeric semiconductors

    Bange, Sebastian

    2009-05-28

    Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of research, the first light-emitting diode based on conjugated polymers having been demonstrated in 1990. Polymeric semiconductors are of tremendous interest for high-volume, low-cost manufacturing (''printed electronics''). Due to their rather simple device structure mostly comprising only one or two functional layers, polymeric diodes are much more difficult to optimize compared to small-molecular organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present work contributes to expanding the knowledge on the physical mechanisms determining device performance by analyzing the role of charge injection and transport on device efficiency for blue and white-emitting devices, based on commercially relevant spiro-linked polyfluorene derivatives. It is shown that such polymers can act as very efficient electron conductors and that interface effects such as charge trapping play the key role in determining the overall device efficiency. This work contributes to the knowledge of how charges drift through the polymer layer to finally find neutral emissive trap states and thus allows a quantitative prediction of the emission color of multichromophoric systems, compatible with the observed color shifts upon driving voltage and temperature variation as well as with electrical conditioning effects. In a more methodically oriented part, it is demonstrated that the transient device emission observed upon terminating the driving voltage can be used to monitor the decay of geminately-bound species as well as to determine trapped charge densities. This enables direct comparisons with numerical

  7. Transient optical and electrical effects in polymeric semiconductors

    Bange, Sebastian

    2009-05-28

    Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of research, the first light-emitting diode based on conjugated polymers having been demonstrated in 1990. Polymeric semiconductors are of tremendous interest for high-volume, low-cost manufacturing (''printed electronics''). Due to their rather simple device structure mostly comprising only one or two functional layers, polymeric diodes are much more difficult to optimize compared to small-molecular organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present work contributes to expanding the knowledge on the physical mechanisms determining device performance by analyzing the role of charge injection and transport on device efficiency for blue and white-emitting devices, based on commercially relevant spiro-linked polyfluorene derivatives. It is shown that such polymers can act as very efficient electron conductors and that interface effects such as charge trapping play the key role in determining the overall device efficiency. This work contributes to the knowledge of how charges drift through the polymer layer to finally find neutral emissive trap states and thus allows a quantitative prediction of the emission color of multichromophoric systems, compatible with the observed color shifts upon driving voltage and temperature variation as well as with electrical conditioning effects. In a more methodically oriented part, it is demonstrated that the transient device emission observed upon terminating the driving voltage can be used to monitor the decay of geminately-bound species as well as to determine trapped charge densities. This enables direct

  8. Recent Advancements in Semiconductor-based Optical Signal Processing

    Nielsen, M L; Mørk, Jesper

    2006-01-01

    Significant advancements in technology and basic understanding of device physics are bringing optical signal processing closer to a commercial breakthrough. In this paper we describe the main challenges in high-speed SOA-based switching.......Significant advancements in technology and basic understanding of device physics are bringing optical signal processing closer to a commercial breakthrough. In this paper we describe the main challenges in high-speed SOA-based switching....

  9. Noise and saturation properties of semiconductor quantum dot optical amplifiers

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved.......We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved....

  10. Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier

    Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu

    2009-01-01

    The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design

  11. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    Kasherininov, P. G.; Tomasov, A. A.

    2008-01-01

    Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10 6 cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10 -2 V/cm 2 , and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

  12. A Novel Defect Inspection Method for Semiconductor Wafer Based on Magneto-Optic Imaging

    Pan, Z.; Chen, L.; Li, W.; Zhang, G.; Wu, P.

    2013-03-01

    The defects of semiconductor wafer may be generated from the manufacturing processes. A novel defect inspection method of semiconductor wafer is presented in this paper. The method is based on magneto-optic imaging, which involves inducing eddy current into the wafer under test, and detecting the magnetic flux associated with eddy current distribution in the wafer by exploiting the Faraday rotation effect. The magneto-optic image being generated may contain some noises that degrade the overall image quality, therefore, in this paper, in order to remove the unwanted noise present in the magneto-optic image, the image enhancement approach using multi-scale wavelet is presented, and the image segmentation approach based on the integration of watershed algorithm and clustering strategy is given. The experimental results show that many types of defects in wafer such as hole and scratch etc. can be detected by the method proposed in this paper.

  13. Micro-combs: A novel generation of optical sources

    Pasquazi, Alessia; Peccianti, Marco; Razzari, Luca; Moss, David J.; Coen, Stéphane; Erkintalo, Miro; Chembo, Yanne K.; Hansson, Tobias; Wabnitz, Stefan; Del'Haye, Pascal; Xue, Xiaoxiao; Weiner, Andrew M.; Morandotti, Roberto

    2018-01-01

    -integrated technologies. Indeed, it is well acknowledged by the electronics industry that future generations of computer processing chips will inevitably require an extremely high density of copper-based interconnections, significantly increasing the chip power dissipation to beyond practical levels [15-17]; hence, conventional approaches to chip design must undergo radical changes. On-chip optical networks, or optical interconnects, can offer high speed and low energy per-transferred-bit, and micro-resonators are widely seen as a key component to interface the electronic world with photonics. Many information technology industries have recently focused on the development of integrated ring resonators to be employed for electrically-controlled light modulators [14-17], greatly advancing the maturity of micro-resonator technology as a whole. Recently [11-13], the demonstration of OFC sources in micro-resonators fabricated in electronic (i.e. in complementary metal oxide semiconductor (CMOS)) compatible platforms has given micro-cavities an additional appeal, with the possibility of exploiting them as light sources in microchips. This scenario is creating fierce competition in developing highly efficient OFC generators based on micro-cavities which can radically change the nature of information transport and processing. Even in telecommunications, perhaps a more conventional environment for optical technologies, novel time-division multiplexed optical systems will require extremely stable optical clocks at ultra-high pulse repetition-rates towards the THz scale. Furthermore, arbitrary pulse generators based on OFC [18,19] are seen as one of the most promising solutions for this next generation of high-capacity optical coherent communication systems. This review will summarise the recent exciting achievements in the field of micro-combs, namely optical frequency combs based on high-Q micro-resonators, with a perspective on both the potential of this technology, as well as the open questions

  14. Fine structure and optical pumping of spins in individual semiconductor quantum dots

    Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

    2008-11-01

    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

  15. Fine structure and optical pumping of spins in individual semiconductor quantum dots

    Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L

    2008-01-01

    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

  16. Access to long-term optical memories using photon echoes retrieved from semiconductor spins

    Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2014-11-01

    The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

  17. Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

    Mario Agio

    2002-01-01

    This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser

  18. Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback

    Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy

    2017-11-01

    Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

  19. Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

    Agio, Mario [Iowa State Univ., Ames, IA (United States)

    2002-12-31

    This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser.

  20. Optical coherent control in semiconductors: Fringe contrast and inhomogeneous broadening

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    in the interplay between the homogeneous and inhomogeneous broadenings are measured. Based on these experiments, a coherent control model describing the optical fringe contrast using different detection schemes, such as photoluminescence or four-wave mixing, is established. Significant spectral modulation...

  1. Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

    Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

    2014-01-01

    In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30–70 mA. In addition, the output stabilities of the power and wavelength are also discussed. (paper)

  2. Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

    Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

    2014-05-01

    In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

  3. Control of optically induced currents in semiconductor crystals

    Kohli, Kapil Kumar

    2010-06-01

    The generation and control of optically induced currents has the potential to become an important building block for optical computers. Here, shift and rectification currents are investigated that emerge from a divergence of the optical susceptibility. It is known that these currents react to the shape of the impinging laser pulse, and especially to the shape of the pulse envelope. The main goal is the systematic manipulation of the pulse envelope with an optical pulse shaper that is integrated into a standard THz emission setup. The initial approach, the chirping of the laser pulse only has a weak influence on the envelope and the currents. Instead, a second approach is suggested that uses the combined envelope of a phase-stable pulse-pair as a parameter. In a laser pulse, the position of the maxima of the electrical field and the pulse envelope are shifted relative to each other. This shift is known as the Carrier-Envelope Phase (CEP). It is a new degree of freedom that is usually only accessible in specially stabilized systems. It is shown, that in a phase-stable pulse-pair, at least the relative CEP is usable as a new degree of freedom. It has a great influence on the shape of the pulse envelope and thus on the current density. It is shown that this approach enables the coherent control of the current density. The experiments are corroborated by a theoretical model of the system. The potential of this approach is demonstrated in an application. A framework is presented that uses an iterative genetic algorithm to create arbitrarily shaped THz traces. The algorithm controls the optical pulse shaper, and varies the phase of the impinging laser pulses until the desired target trace is found. (orig.)

  4. Optical conductivity and optical effective mass in a high-mobility organic semiconductor: Implications for the nature of charge transport

    Li, Yuan

    2014-12-03

    We present a multiscale modeling of the infrared optical properties of the rubrene crystal. The results are in very good agreement with the experimental data that point to nonmonotonic features in the optical conductivity spectrum and small optical effective masses. We find that, in the static-disorder approximation, the nonlocal electron-phonon interactions stemming from low-frequency lattice vibrations can decrease the optical effective masses and lead to lighter quasiparticles. On the other hand, the charge-transport and infrared optical properties of the rubrene crystal at room temperature are demonstrated to be governed by localized carriers driven by inherent thermal disorders. Our findings underline that the presence of apparently light carriers in high-mobility organic semiconductors does not necessarily imply bandlike transport.

  5. Optical conductivity and optical effective mass in a high-mobility organic semiconductor: Implications for the nature of charge transport

    Li, Yuan; Yi, Yuanping; Coropceanu, Veaceslav; Bredas, Jean-Luc

    2014-01-01

    We present a multiscale modeling of the infrared optical properties of the rubrene crystal. The results are in very good agreement with the experimental data that point to nonmonotonic features in the optical conductivity spectrum and small optical effective masses. We find that, in the static-disorder approximation, the nonlocal electron-phonon interactions stemming from low-frequency lattice vibrations can decrease the optical effective masses and lead to lighter quasiparticles. On the other hand, the charge-transport and infrared optical properties of the rubrene crystal at room temperature are demonstrated to be governed by localized carriers driven by inherent thermal disorders. Our findings underline that the presence of apparently light carriers in high-mobility organic semiconductors does not necessarily imply bandlike transport.

  6. Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

    Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2016-01-01

    The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception–and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In 2 O 3 (ITO)—converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein–Moss shift that are consistent with previous studies on In 2 O 3 single crystals and thin films. - Highlights: • The Tauc method of band gap measurement is re-evaluated for crystalline materials. • Graphical method proposed for extracting optical band gaps from absorption spectra. • The proposed method incorporates an energy broadening term for energy transitions. • Values for ITO were self-consistent between two different measurement methods.

  7. Nonlinear Optical Response of Polar Semiconductors in the Terahertz Range

    Roman, Eric; Yates, Jonathan; Veithen, Marek; Vanderbilt, David; Souza, Ivo

    2006-03-01

    Using the Berry-phase finite-field method, we compute from first-principles the recently measured infrared (IR) dispersion of the nonlinear susceptibility (2)circ in III-V zincblende semiconductors. At far-IR (terahertz) frequencies, in addition to the purely electronic response (2)circ∞, the total (2)circ depends on three other parameters, C1, C2, and C3, describing the contributions from ionic motion. They relate to the TO Raman polarizability and the second-order displacement-induced dielectric polarization and forces, respectively. Contrary to a widely-accepted model, but in agreement with the recent experiments on GaAs, ^1 we find that the contribution from mechanical anharmonicity dominates over electrical anharmonicity. By using Richardson extrapolation to evaluate the Berry's phase in k-space by finite differences, we are able to improve the convergence of the nonlinear susceptibility from the usual O[(δk)^2] to O[(δk)^4], dramatically reducing the computational cost. T. Dekorsy, V. A. Yakovlev, W. Seidel, M. Helm, and F. Keilmann, Phys. Rev. Lett. 90, 055508 (2003). C. Flytzanis, Phys. Rev. B 6, 1264 (1972). R. Umari and A. Pasquarello, Phys. Rev. B 68, 085114 (2003).

  8. On-demand semiconductor single-photon source with near-unity indistinguishability.

    He, Yu-Ming; He, Yu; Wei, Yu-Jia; Wu, Dian; Atatüre, Mete; Schneider, Christian; Höfling, Sven; Kamp, Martin; Lu, Chao-Yang; Pan, Jian-Wei

    2013-03-01

    Single-photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness and interconnectivity with matter qubits. A key prerequisite for their use in optical quantum computing and solid-state networks is a high level of efficiency and indistinguishability. Pulsed resonance fluorescence has been anticipated as the optimum condition for the deterministic generation of high-quality photons with vanishing effects of dephasing. Here, we generate pulsed single photons on demand from a single, microcavity-embedded quantum dot under s-shell excitation with 3 ps laser pulses. The π pulse-excited resonance-fluorescence photons have less than 0.3% background contribution and a vanishing two-photon emission probability. Non-postselective Hong-Ou-Mandel interference between two successively emitted photons is observed with a visibility of 0.97(2), comparable to trapped atoms and ions. Two single photons are further used to implement a high-fidelity quantum controlled-NOT gate.

  9. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  10. Performance Evaluation of Three-Level Z-Source Inverters Under Semiconductor-Failure Conditions

    Gao, Feng; Loh, Poh Chiang; Blaabjerg, Frede

    2009-01-01

    This paper evaluates and proposes various compensation methods for three-level Z-source inverters under semiconductor-failure conditions. Unlike the fault-tolerant techniques used in traditional three-level inverters, where either an extra phase-leg or collective switching states are used......, the proposed methods for three-level Z-source inverters simply reconfigure their relevant gating signals so as to ride-through the failed semiconductor conditions smoothly without any significant decrease in their ac-output quality and amplitude. These features are partly attributed to the inherent boost...... under semiconductor-failure conditions. For verifying these described performance features, PLECS simulation and experimental testing were performed with some results captured and shown in a later section for visual confirmation....

  11. Analysis of the Vignale-Kohn current functional in the calculation of the optical spectra of semiconductors

    Berger, J. A.; de Boeij, P. L.; van Leeuwen, R.

    In this work, we investigate the Vignale-Kohn current functional when applied to the calculation of optical spectra of semiconductors. We discuss our results for silicon. We found qualitatively similar results for other semiconductors. These results show that there are serious limitations to the

  12. Optical surfacing via linear ion source

    Wu, Lixiang; Wei, Chaoyang; Shao, Jianda

    2017-01-01

    We present a concept of surface decomposition extended from double Fourier series to nonnegative sinusoidal wave surfaces, on the basis of which linear ion sources apply to the ultra-precision fabrication of complex surfaces and diffractive optics. The modified Fourier series, or sinusoidal wave surfaces, build a relationship between the fabrication process of optical surfaces and the surface characterization based on power spectral density (PSD) analysis. Also, we demonstrate that the one-dimensional scanning of linear ion source is applicable to the removal of mid-spatial frequency (MSF) errors caused by small-tool polishing in raster scan mode as well as the fabrication of beam sampling grating of high diffractive uniformity without a post-processing procedure. The simulation results show that optical fabrication with linear ion source is feasible and even of higher output efficiency compared with the conventional approach.

  13. Optical surfacing via linear ion source

    Wu, Lixiang, E-mail: wulx@hdu.edu.cn [Key Lab of RF Circuits and Systems of Ministry of Education, Zhejiang Provincial Key Lab of LSI Design, Microelectronics CAD Center, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou (China); Wei, Chaoyang, E-mail: siomwei@siom.ac.cn [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Shao, Jianda, E-mail: jdshao@siom.ac.cn [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2017-04-15

    We present a concept of surface decomposition extended from double Fourier series to nonnegative sinusoidal wave surfaces, on the basis of which linear ion sources apply to the ultra-precision fabrication of complex surfaces and diffractive optics. The modified Fourier series, or sinusoidal wave surfaces, build a relationship between the fabrication process of optical surfaces and the surface characterization based on power spectral density (PSD) analysis. Also, we demonstrate that the one-dimensional scanning of linear ion source is applicable to the removal of mid-spatial frequency (MSF) errors caused by small-tool polishing in raster scan mode as well as the fabrication of beam sampling grating of high diffractive uniformity without a post-processing procedure. The simulation results show that optical fabrication with linear ion source is feasible and even of higher output efficiency compared with the conventional approach.

  14. Optically pumped polarized H- ion source

    Anderson, L.W.

    1986-01-01

    The current status and future prospects for the optically pumped polarized H - ion source are discussed. At the present time H - ion currents of 60 μA and with a polarization of 65% have been produced. The ion current and polarization can be increased significantly if the optically pumped Na charge exchange target density and polarization can be increased. Studies of wall surfaces that permit many bounces before depolarizing the Na electron spin and studies of radiation trapping in optically pumped Na indicate that the Na target density and polarization can be increased substantially. 27 refs., 6 figs., 2 tabs

  15. Demonstration of tunable microwave photonic notch filters using slow and fast light effects in semiconductor optical amplifiers

    Xue, Weiqi; Sales, Salvador; Mørk, Jesper

    2009-01-01

    We introduce a novel scheme based on slow and fast light effects in semiconductor optical amplifiers, to implement a microwave photonic notch filter with ~100% fractional tuning range at a microwave frequency of 30 GHz....

  16. Optical investigation of carrier tunneling in semiconductor nanostructures

    Emiliani, V.; Ceccherini, S.; Bogani, F.; Colocci, M.; Frova, A.; Shi, Song Stone

    1997-08-01

    The tunneling dynamics of excitons and free carriers in AlxGa1-xAs/GaAs asymmetric double quantum well and near-surface quantum well structures has been investigated by means of time-resolved optical techniques. The competing processes of carrier tunneling out of the quantum well and exciton formation and recombination inside the quantum well have been thoroughly studied in the range of the excitation densities relevant to device applications. A consistent picture capable of fully describing the carrier and exciton-tunneling mechanisms in both types of structures has been obtained and apparently contrasting results in the recent literature are clarified.

  17. A High Reliability Frequency Stabilized Semiconductor Laser Source, Phase II

    National Aeronautics and Space Administration — Ultrastable, narrow linewidth, high reliability MOPA sources are needed for high performance LIDARs in NASA for, wind speed measurement, surface topography and earth...

  18. Studies of optical properties and applications of some mixed ternary semiconductors

    Ghosh, P.S.; Ghosh, D.K.; Samanta, L.K.

    1989-01-01

    Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author)

  19. Non-Drude optical conductivity of (III, Mn)V ferromagnetic semiconductors

    Yang, S.R. E.; Sinova, J.; Jungwirth, Tomáš; Shim, Y. P.; MacDonald, A. H.

    2003-01-01

    Roč. 67, č. 4 (2003), s. 045205-1 - 045205-7 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : non-Drude optical conductivity * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  20. Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

    Buldu, J M; Trull, J; Torrent, M C; GarcIa-Ojalvo, J; Mirasso, Claudio R

    2002-01-01

    The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

  1. Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

    Buldu, J M [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Trull, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Torrent, M C [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); GarcIa-Ojalvo, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Mirasso, Claudio R [Departament de FIsica, Universitat de les Illes Balears, E-07071 Palma de Mallorca (Spain)

    2002-02-01

    The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

  2. Ordering-induced changes in the optical spectra of semiconductor alloys

    Bernard, J.E.; Wei, S.; Wood, D.M.; Zunger, A.

    1988-01-01

    It is shown how the recently predicted and subsequently observed spontaneous long-range ordering of pseudobinary A/sub 0.5/B/sub 0.5/C isovalent semiconductor alloys into the (AC) 1 (BC) 1 superlattice structure (a CuAuI-type crystal) gives rise to characteristic changes in the optical and photoemission spectra. We predict new direct transitions and substantial splittings of transitions absent in the disordered alloy

  3. The structural and optical constants of Ag2S semiconductor nanostructure in the Far-Infrared.

    Zamiri, Reza; Abbastabar Ahangar, Hossein; Zakaria, Azmi; Zamiri, Golnoosh; Shabani, Mehdi; Singh, Budhendra; Ferreira, J M F

    2015-01-01

    In this paper a template-free precipitation method was used as an easy and low cost way to synthesize Ag2S semiconductor nanoparticles. The Kramers-Kronig method (K-K) and classical dispersion theory was applied to calculate the optical constants of the prepared samples, such as the reflective index n(ω) and dielectric constant ε(ω) in Far-infrared regime. Nanocrystalline Ag2S was synthesized by a wet chemical precipitation method. Ag2S nanoparticle was characterized by X-ray diffraction, Scanning Electron Microscopy, UV-visible, and FT-IR spectrometry. The refinement of the monoclinic β-Ag2S phase yielded a structure solution similar to the structure reported by Sadanaga and Sueno. The band gap of Ag2S nanoparticles is around 0.96 eV, which is in good agreement with previous reports for the band gap energy of Ag2S nanoparticles (0.9-1.1 eV). The crystallite size of the synthesized particles was obtained by Hall-Williamson plot for the synthesized Ag2S nanoparticles and it was found to be 217 nm. The Far-infrared optical constants of the prepared Ag2S semiconductor nanoparticles were evaluated by means of FTIR transmittance spectra data and K-K method. Graphical abstractThe Far-infrared optical constants of Ag2S semiconductor nanoparticles.

  4. Synthesis and optical properties of novel organic-inorganic hybrid nanolayer structure semiconductors

    Zhang Sanjun; Lanty, Gaetan; Lauret, Jean-Sebastien [Laboratoire de Photonique Quantique et Moleculaire de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France); Deleporte, Emmanuelle, E-mail: Emmanuelle.Deleporte@lpqm.ens-cachan.fr [Laboratoire de Photonique Quantique et Moleculaire de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France); Audebert, Pierre; Galmiche, Laurent [Laboratoire de Photophysique et Photochimie Supramoleculaires et Macromoleculaires de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France)

    2009-06-15

    We report on the synthesis of some novel organic-inorganic hybrid 2D perovskite semiconductors (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. These semiconductors are self-assembled intercalation nanolayers and have a multi-quantum-well energy level structure. We systematically vary the characteristic of organic groups (R-(CH{sub 2}){sub n}NH{sub 3}{sup +}) to study the relationship between their structures and the optical properties of (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. From optical absorption and photoluminescence spectroscopy experiments performed on series of samples, we find some trends of choosing the organic groups to improve the optical performance of (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. A new organic group, which allows synthesis of nanolayer perovskite semiconductors with quite high photoluminescence efficiency and better long-term stability, has been found.

  5. Semiconductor physics

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  6. Optical Resonance of A Three-Level System in Semiconductor Quantum Dots

    Nguyen Van Hieu

    2017-11-01

    Full Text Available The optical resonance of a three-level system of the strongly correlated electrons in the twolevel semiconductor quantum dot interacting with the linearly polarized monochromatic electromagnetic radiation is studied. With the application of the Green function method the expressions of the state vectors and the energies of the stationary states of the system in the regime of the optical resonance are derived. The Rabi oscillations of the electron populations at different levels as well as the Rabi splitting of the peaks in the photon emission spectra are investigated. PACS numbers: 71.35.-y, 78.55.-m, 78.67.Hc

  7. Comprehensive experimental analysis of nonlinear dynamics in an optically-injected semiconductor laser

    Kevin Schires

    2011-09-01

    Full Text Available We present the first comprehensive experimental study, to our knowledge, of the routes between nonlinear dynamics induced in a semiconductor laser under external optical injection based on an analysis of time-averaged measurements of the optical and RF spectra and phasors of real-time series of the laser output. The different means of analysis are compared for several types of routes and the benefits of each are discussed in terms of the identification and mapping of the nonlinear dynamics. Finally, the results are presented in a novel audio/video format that describes the evolution of the dynamics with the injection parameters.

  8. Crisis route to chaos in semiconductor lasers subjected to external optical feedback

    Wishon, Michael J.; Locquet, Alexandre; Chang, C. Y.; Choi, D.; Citrin, D. S.

    2018-03-01

    Semiconductor lasers subjected to optical feedback have been intensively used as archetypical testbeds for high-speed (sub-ns) and high-dimensional nonlinear dynamics. By simultaneously extracting all the dynamical variables, we demonstrate that for larger current, the commonly named "quasiperiodic" route is in fact based on mixed external-cavity solutions that lock the oscillation frequency of the intensity, voltage, and separation in optical frequency through a mechanism involving successive rejections along the unstable manifold of an antimode. We show that chaos emerges from a crisis resulting from the inability to maintain locking as the unstable manifold becomes inaccessible.

  9. Semiconductor optical amplifiers for the 1000-1100-nm spectral range

    Lobintsov, A A; Shramenko, M V; Yakubovich, S D

    2008-01-01

    Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

  10. Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 - 800 nm

    Il'chenko, S N; Kostin, Yu O; Kukushkin, I A; Ladugin, M A; Lapin, P I; Lobintsov, A A; Marmalyuk, Aleksandr A; Yakubovich, S D

    2011-01-01

    We have studied superluminescent diodes (SLDs) and semiconductor optical amplifiers (SOAs) based on an (Al x Ga 1-x )As/GaAs single quantum well structure with an Al content x ∼ 0.1 in a 10-nm-thick active layer. Depending on the length of the active channel, the single-mode fibre coupled cw output power of the SLDs is 1 to 30 mW at a spectral width of about 50 nm. The width of the optical gain band in the active channel exceeds 40 nm. Preliminary operating life tests have demonstrated that the devices are sufficiently reliable. (lasers)

  11. Experimental investigations of optical nonlinearities in semiconductor-doped glass waveguides

    Dannberg, P.; Possner, T.; Braeuer, A.; Bartuch, U.

    1988-01-01

    Both, thermal and electronic optical nonlinearities are studied in semiconductor-doped glass (SDG) waveguides which are fabricated in commercially available sharp-cut filters by Cs + -K + ion exchange. The relaxation time in photodarkened substrates is measured to be 30 ps. By means of a prism coupling set-up the saturation value of the nonlinear index change is determined. Furthermore, a high stability dual-beam interferometer is presented for the measurement of both, thermal and electronic nonlinear refractive index n 2 in planar waveguides. Conclusions about the application of SDG to opto-optical switching are given. (author)

  12. Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

    Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

    2007-01-01

    We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity

  13. Nonlinear optics response of semiconductor quantum wells under high magnetic fields

    Chemla, D.S.

    1993-07-01

    Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW's as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H → ∞. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed

  14. Metallic nanoshells with semiconductor cores: optical characteristics modified by core medium properties.

    Bardhan, Rizia; Grady, Nathaniel K; Ali, Tamer; Halas, Naomi J

    2010-10-26

    It is well-known that the geometry of a nanoshell controls the resonance frequencies of its plasmon modes; however, the properties of the core material also strongly influence its optical properties. Here we report the synthesis of Au nanoshells with semiconductor cores of cuprous oxide and examine their optical characteristics. This material system allows us to systematically examine the role of core material on nanoshell optical properties, comparing Cu(2)O core nanoshells (ε(c) ∼ 7) to lower core dielectric constant SiO(2) core nanoshells (ε(c) = 2) and higher dielectric constant mixed valency iron oxide nanoshells (ε(c) = 12). Increasing the core dielectric constant increases nanoparticle absorption efficiency, reduces plasmon line width, and modifies plasmon energies. Modifying the core medium provides an additional means of tailoring both the near- and far-field optical properties in this unique nanoparticle system.

  15. Defects in semiconductors

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  16. Microscopic investigations of the terahertz and the extreme nonlinear optical response of semiconductors

    Golde, Daniel

    2010-06-22

    In the major part of this Thesis, we discuss the linear THz response of semiconductor nanostructures based on a microscopic theory. Here, two different problems are investigated: intersubband transitions in optically excited quantum wells and the THz plasma response of two-dimensional systems. In the latter case, we analyze the response of correlated electron and electron-hole plasmas. Extracting the plasma frequency from the linear response, we find significant deviations from the commonly accepted two-dimensional plasma frequency. Besides analyzing the pure plasma response, we also consider an intermediate regime where the response of the electron-hole plasma consists of a mixture of plasma contributions and excitonic transitions. A quantitative experiment-theory comparison provides novel insights into the behavior of the system at the transition from one regime to the other. The discussion of the intersubband transitions mainly focuses on the coherent superposition of the responses from true THz transitions and the ponderomotively accelerated carriers. We present a simple method to directly identify ponderomotive effects in the linear THz response. Apart from that, the excitonic contributions to intersubband transitions are investigated. The last part of the present Thesis deals with a completely different regime. Here, the extreme nonlinear optical response of low-dimensional semiconductor structures is discussed. Formally, extreme nonlinear optics describes the regime of light-matter interaction where the exciting field is strong enough such that the Rabi frequency is comparable to or larger than the characteristic transition frequency of the investigated system. Here, the Rabi frequency is given by the product of the electrical field strength and the dipole-matrix element of the respective transition. Theoretical investigations have predicted a large number of novel nonlinear effects arising for such strong excitations. Some of them have been observed in

  17. Layer-by-layer assembly of multicolored semiconductor quantum dots towards efficient blue, green, red and full color optical films

    Zhang Jun; Li Qian; Di Xiaowei; Liu Zhiliang; Xu Gang

    2008-01-01

    Multicolored semiconductor quantum dots have shown great promise for construction of miniaturized light-emitting diodes with compact size, low weight and cost, and high luminescent efficiency. The unique size-dependent luminescent property of quantum dots offers the feasibility of constructing single-color or full-color output light-emitting diodes with one type of material. In this paper, we have demonstrated the facile fabrication of blue-, green-, red- and full-color-emitting semiconductor quantum dot optical films via a layer-by-layer assembly technique. The optical films were constructed by alternative deposition of different colored quantum dots with a series of oppositely charged species, in particular, the new use of cationic starch on glass substrates. Semiconductor ZnSe quantum dots exhibiting blue emission were deposited for fabrication of blue-emitting optical films, while semiconductor CdTe quantum dots with green and red emission were utilized for construction of green- and red-emitting optical films. The assembly of integrated blue, green and red semiconductor quantum dots resulted in full-color-emitting optical films. The luminescent optical films showed very bright emitting colors under UV irradiation, and displayed dense, smooth and efficient luminous features, showing brighter luminescence in comparison with their corresponding quantum dot aqueous colloid solutions. The assembled optical films provide the prospect of miniaturized light-emitting-diode applications.

  18. A study on the optical parts for a semiconductor laser module

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)

    2014-11-15

    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  19. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)

    2016-06-15

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  20. Effects of two-photon absorption on all optical logic operation based on quantum-dot semiconductor optical amplifiers

    Zhang, Xiang; Dutta, Niloy K.

    2018-01-01

    We investigate all-optical logic operation in quantum-dot semiconductor optical amplifier (QD-SOA) based Mach-Zehnder interferometer considering the effects of two-photon absorption (TPA). TPA occurs during the propagation of sub-picosecond pulses in QD-SOA, which leads to a change in carrier recovery dynamics in quantum-dots. We utilize a rate equation model to take into account carrier refill through TPA and nonlinear dynamics including carrier heating and spectral hole burning in the QD-SOA. The simulation results show the TPA-induced pumping in the QD-SOA can reduce the pattern effect and increase the output quality of the all-optical logic operation. With TPA, this scheme is suitable for high-speed Boolean logic operation at 320 Gb/s.

  1. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

    2010-02-01

    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  2. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    Chang-Hwan Kim

    2003-01-01

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms

  3. Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays

    E. U. Donev

    2008-01-01

    Full Text Available We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model. The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.

  4. Combined Electrical, Optical and Nuclear Investigations of Impurities and Defects in II-VI Semiconductors

    2002-01-01

    % IS325 \\\\ \\\\ To achieve well controlled bipolar conductivity in II-VI semiconductors represents a fundamental problem in semiconductor physics. The doping problems are controversely discussed, either in terms of self compensation or of compensation and passivation by unintentionally introduced impurities. \\\\ \\\\It is the goal of our experiments at the new ISOLDE facility, to shed new light on these problems and to look for ways to circumvent it. For this aim the investigation of impurities and native defects and the interaction between each other shall be investigated. The use of radioactive ion beams opens the access to controlled site selective doping of only one sublattice via nuclear transmutation. The compensating and passivating mechanisms will be studied by combining nuclear, electrical and optical methods like Perturbed Angular Correlation~(PAC), Hall Effect~(HE), Deep Level Transient Spectroscopy~(DLTS), Photoluminescence Spectroscopy~(PL) and electron paramagnetic resonance (EPR). \\\\ \\\\We intend to ...

  5. Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization

    Willardson, R K; Christofides, Constantinos; Ghibaudo, Gerard

    1997-01-01

    Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical, physical, and optical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects g...

  6. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    Kim, Chang-Hwan [Iowa State Univ., Ames, IA (United States)

    2003-01-01

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  7. On the estimation of matrix elements for optical transitions in semiconductors

    Hassan, A.R.

    1992-09-01

    A semi-empirical method is used to calculate the numerical values of the interband momentum matrix elements of the allowed optical transitions in semiconductors. This method is based on the evaluation of the ratio of the two-photon and one-photon absorption coefficients and the compare the result with the corresponding experimental values in a number of semiconductors both for direct and indirect transition processes. The numerical values of the momentum matrix elements are compared with the convenient theoretical calculations available. The result is found to agree fairly well with the corresponding values computed using the k-vector · p-vector perturbation theory. (author). 19 refs, 2 figs, 2 tabs

  8. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  9. Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

    Ma Li; Zhu Hong-Liang; Liang Song; Zhao Ling-Juan; Chen Ming-Hua

    2013-01-01

    Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4 × 1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio (SMSR) exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  10. TE-TM dynamics in a semiconductor laser subject to polarization-rotated optical feedback

    Heil, T.; Uchida, A.; Davis, P.; Aida, T.

    2003-01-01

    We present a comprehensive experimental characterization of the dynamics of semiconductor lasers subject to polarization-rotated optical feedback. We find oscillatory instabilities appearing for large feedback levels and disappearing at large injection currents, which we classify in contrast to the well-known conventional optical-feedback-induced dynamics. In addition, we compare our experiments to theoretical results of a single-mode model assuming incoherence of the optical feedback, and we identify differences concerning the average power of the laser. Hence, we develop an alternative model accounting for both polarizations, where the emission of the dominant TE mode is injected with delay into the TM mode of the laser. Numerical simulations using this model show good qualitative agreement with our experimental results, correctly reproducing the parameter dependences of the dynamics. Finally, we discuss the application of polarization-rotated-feedback induced instabilities in chaotic carrier communication systems

  11. Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

    Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

    2015-07-16

    We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift. Copyright © 2015 Elsevier B.V. All rights reserved.

  12. Acousto-optic modulation of III-V semiconductor multiple quantum wells

    Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.

    1996-01-01

    We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society

  13. New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

    Khadzhi, P. I.; Lyakhomskaya, K. D.; Nadkin, L. Y.; Markov, D. A.

    2002-05-01

    The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.

  14. Characterization of CdSe-nanocrystals used in semiconductors for aerospace applications: Production and optical properties

    Maroof A. Hegazy

    2014-06-01

    Full Text Available Semiconductor nanocrystals (NC’s are the materials with dimensions less than 10 nm. When the dimensions of nanocrystals are reduced the bulk bohr diameter, the photo generated electron-hole pair becomes confined and nanocrystal exhibits size dependent upon optical properties. This work is focused on the studying of CdSe semiconductor nanocrystals. These nanocrystals are considered as one of the most widely studies semiconductors because of their size – tunable optical properties from the visible spectrum. CdSe-nanocrystals are produced and obtained throughout the experimental setup initiated at Nano-NRIAG Unit (NNU, which has been constructed and assembled at NRIAG institute. This unit has a specific characterization for preparing chemical compositions, which may be used for solar cell fabrications and space science technology. The materials prepared included cadmium oxide and selinid have sizes ranging between 2.27 nm and 3.75 nm. CdSe-nanocrystals are synthesized in “TOP/TOPO (tri–octyl phosphine/tri–octyl phosphine oxide. Diagnostic tools, include UV analysis, TEM microscope, and X-ray diffraction, which are considered for the analytical studies of the obtained materials. The results show that, in this size regime, the generated particles have unique optical properties, which is achieved from the UV analysis. Also, the TEM image analysis shows the size and shape of the produced particles. These studies are carried out to optimize the photoluminescent efficiency of these nanoparticles. Moreover, the data revealed that, the grain size of nanocrystals is dependent upon the growth time in turn, it leads to a change in the energy gap. Some applications of this class of materials are outlined.

  15. A transfer function approach to the small-signal response of saturated semiconductor optical amplifiers

    Nielsen, Mads Lønstrup; Blumenthal, D. J.; Mørk, Jesper

    2000-01-01

    A theoretical analysis of the small-signal frequency response (SSFR) of a wavelength converter based on cross-gain modulation in a semiconductor optical amplifier with a finite waveguide loss is presented. We use a transfer function formalism to explain the resonant behavior of the frequency...... response. The limitations to the magnitude of the spectral overshoot are also accounted for. Operating with the data and CW signals in a co-propagating configuration, we End that the resonance only exists for a finite waveguide loss. In a counter-propagating scheme, a resonance can exist regardless...

  16. Low-frequency fluctuation in multimode semiconductor laser subject to optical feedback

    Xu Zhang; Huiying Ye; Zhaoxin Song

    2008-01-01

    Dynamics of a semiconductor laser subject to moderate optical feedback operating in the low-frequency fluctuation regime is numerically investigated.Multimode Lang-Kobayashi(LK)equations show that the low-frequency intensity dropout including the total intensity and sub-modes intensity is accompanied by sudden dropout simultaneously,which is in good agreement with experimental observation.The power fluctuation is quite annoying in practical applications,therefore it becomes important to study the mechanism of power fluctuation.It is also shown that many factors,such as spontaneous emission noise and feedback parameter,may influence power fluctuation larger than previously expected.

  17. Slow and fast light effects in semiconductor optical amplifiers for applications in microwave photonics

    Xue, Weiqi

    This thesis analyzes semiconductor optical amplifiers based slow and fast light effects with particular focus on the applications in microwave photonics. We conceive novel ideas and demonstrate a great enhancement of light slow down. Furthermore, by cascading several slow light stages, >360 degree...... microwave phase shifts over a bandwidth of several tens of gigahertz are achieved. These also satisfy the basic requirements of microwave photonic systems. As an application demonstration, a tunable microwave notch filter is realized, where slow light based phase shifters provide 100% fractional tuning over...

  18. Physical model for the incoherent writing/erasure of cavity solitons in semiconductor optical amplifiers.

    Barbay, S; Kuszelewicz, R

    2007-09-17

    We present a physical mechanism that explains the recent observations of incoherent writing and erasure of Cavity Solitons in a semiconductor optical amplifier [S. Barbay et al, Opt. Lett. 31, 1504-1506 (2006)]. This mechanism allows to understand the main observations of the experiment. In particular it perfectly explains why writing and erasure are possible as a result of a local perturbation in the carrier density, and why a delay is observed along with the writing process. Numerical simulations in 1D are performed and show very good qualitative agreement with the experimental observations.

  19. Enhanced performance of semiconductor optical amplifier at high direct modulation speed with birefringent fiber loop

    K. E. Zoiros

    2014-07-01

    Full Text Available We employ a birefringent fiber loop (BFL for enhancing the performance of a semiconductor optical amplifier (SOA which is directly modulated. By properly exploiting the BFL comb-like spectral response, we show that the SOA can be directly modulated at a data rate which is more than five times faster than that enabled by the SOA electrical bandwidth. The experimental results, which include chirp measurements, demonstrate the significant improvements achieved in the performance of the directly modulated SOA with the help of the BFL.

  20. Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

    Oh, Changhoon; Ryoo, Hoonchul; Lee, Hyungwoo; Hahn, Jae W.; Kim, Se-Yeon; Yi, Hun-Jung

    2010-01-01

    We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO 2 film on a silicon wafer.

  1. High resolution optical spectroscopy of air-induced electrical instabilities in n-type polymer semiconductors.

    Di Pietro, Riccardo; Sirringhaus, Henning

    2012-07-03

    We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Figures of merit for microwave photonic phase shifters based on semiconductor optical amplifiers.

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2012-05-07

    We theoretically and experimentally compare the performance of two fully tunable phase shifter structures based on semiconductor optical amplifiers (SOA) by means of several figures of merit common to microwave photonic systems. A single SOA stage followed by a tailored notch filter is compared with a cascaded implementation comprising three SOA-based phase shifter stages. Attention is focused on the assessment of the RF net gain, noise figure and nonlinear distortion. Recommendations on the performance optimization of this sort of approaches are detailed.

  3. System tests of radiation hard optical links for the ATLAS semiconductor tracker

    Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

    2000-01-01

    A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

  4. A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

    Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

    2018-03-01

    Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

    Martín-Sánchez, Javier; Trotta, Rinaldo; Mariscal, Antonio; Serna, Rosalía; Piredda, Giovanni; Stroj, Sandra; Edlinger, Johannes; Schimpf, Christian; Aberl, Johannes; Lettner, Thomas; Wildmann, Johannes; Huang, Huiying; Yuan, Xueyong; Ziss, Dorian; Stangl, Julian; Rastelli, Armando

    2018-01-01

    The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots (QDs) embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials’ emission properties such as their emission energy, fine-structure-splitting in self-assembled InAs QDs and semiconductor 2D materials, upconversion phenomena in BaTiO3 thin films or piezotronic effects in ZnS:Mn films and InAs QDs. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary QDs. Future research directions and prospects are discussed.

  6. Proposal for the momentum-resolved and time-resolved optical measurement of the current distribution in semiconductors.

    Liu, Jiang-Tao; Su, Fu-Hai; Deng, Xin-Hua; Wang, Hai

    2012-05-21

    The two-color optical coherence absorption spectrum (QUIC-AB) of semiconductors in the presence of a charge current is investigated. We find that the QUIC-AB depends strongly not only on the amplitude of the electron current but also on the direction of the electron current. Thus, the amplitude and the angular distribution of current in semiconductors can be detected directly in real time with the QUIC-AB.

  7. Modeling of Semiconductor Optical Amplifier Gain Characteristics for Amplification and Switching

    Mahad, Farah Diana; Sahmah, Abu; Supa'at, M.; Idrus, Sevia Mahdaliza; Forsyth, David

    2011-05-01

    The Semiconductor Optical Amplifier (SOA) is presently commonly used as a booster or pre-amplifier in some communication networks. However, SOAs are also a strong candidate for utilization as multi-functional elements in future all-optical switching, regeneration and also wavelength conversion schemes. With this in mind, the purpose of this paper is to simulate the performance of the SOA for improved amplification and switching functions. The SOA is modeled and simulated using OptSim software. In order to verify the simulated results, a MATLAB mathematical model is also used to aid the design of the SOA. Using the model, the gain difference between simulated and mathematical results in the unsaturated region is <1dB. The mathematical analysis is in good agreement with the simulation result, with only a small offset due to inherent software limitations in matching the gain dynamics of the SOA.

  8. Gain transient control for wavelength division multiplexed access networks using semiconductor optical amplifiers

    Gibbon, Timothy Braidwood; Osadchiy, Alexey Vladimirovich; Kjær, Rasmus

    2009-01-01

    Gain transients can severely hamper the upstream network performance in wavelength division multiplexed (WDM) access networks featuring erbium doped fiber amplifiers (EDFAs) or Raman amplification. We experimentally demonstrate for the first time using 10 Gb/s fiber transmission bit error rate...... measurements how a near-saturated semiconductor optical amplifier (SOA) can be used to control these gain transients. An SOA is shown to reduce the penalty of transients originating in an EDFA from 2.3 dB to 0.2 dB for 10 Gb/s transmission over standard single mode fiber using a 231-1 PRBS pattern. The results...... suggest that a single SOA integrated within a WDM receiver at the metro node could offer a convenient all-optical solution for upstream transient controlin WDM access networks....

  9. Purcell effect for active tuning of light scattering from semiconductor optical antennas.

    Holsteen, Aaron L; Raza, Søren; Fan, Pengyu; Kik, Pieter G; Brongersma, Mark L

    2017-12-15

    Subwavelength, high-refractive index semiconductor nanostructures support optical resonances that endow them with valuable antenna functions. Control over the intrinsic properties, including their complex refractive index, size, and geometry, has been used to manipulate fundamental light absorption, scattering, and emission processes in nanostructured optoelectronic devices. In this study, we harness the electric and magnetic resonances of such antennas to achieve a very strong dependence of the optical properties on the external environment. Specifically, we illustrate how the resonant scattering wavelength of single silicon nanowires is tunable across the entire visible spectrum by simply moving the height of the nanowires above a metallic mirror. We apply this concept by using a nanoelectromechanical platform to demonstrate active tuning. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

  10. Effect of the depolarization field on coherent optical properties in semiconductor quantum dots

    Mitsumori, Yasuyoshi; Watanabe, Shunta; Asakura, Kenta; Seki, Keisuke; Edamatsu, Keiichi; Akahane, Kouichi; Yamamoto, Naokatsu

    2018-06-01

    We study the photon echo spectrum of self-assembled semiconductor quantum dots using femtosecond light pulses. The spectrum shape changes from a single-peaked to a double-peaked structure as the time delay between the two excitation pulses is increased. The spectrum change is reproduced by numerical calculations, which include the depolarization field induced by the biexciton-exciton transition as well as the conventional local-field effect for the exciton-ground-state transition in a quantum dot. Our findings suggest that various optical transitions in tightly localized systems generate a depolarization field, which renormalizes the resonant frequency with a change in the polarization itself, leading to unique optical properties.

  11. Measurement of the linewidth enhancement factor based on nonlinear polarization rotation of semiconductor optical amplifier.

    Liu, Guodong; Wu, Chongqing; Wang, Fu; Zhang, Tianyong; Shang, Chao; Gao, Kaiqiang

    2015-06-01

    A simple measurement scheme of the linewidth enhancement factor based on the nonlinear polarization rotation of a semiconductor optical amplifier is proposed. Considering the polarization dependent gain, the relationship between the linewidth enhancement factor and the Stokes vector was derived theoretically. It is proven that the linewidth enhancement factor can be calculated directly from the Stokes parameters without any other assistant measurement system. The results demonstrate that the linewidth enhancement factor varies in a small range from 10.5 to 8.5 for TE mode and from 8.2 to 5.8 for TM mode, respectively, when the input optical power varies from 50 μW to 1 mW and the bias current varies from 90 to 170 mA.

  12. High-order optical nonlinearities in nanocomposite films dispersed with semiconductor quantum dots at high concentrations

    Tomita, Yasuo; Matsushima, Shun-suke; Yamagami, Ryu-ichi; Jinzenji, Taka-aki; Sakuma, Shohei; Liu, Xiangming; Izuishi, Takuya; Shen, Qing

    2017-01-01

    We describe the nonlinear optical properties of inorganic-organic nanocomposite films in which semiconductor CdSe quantum dots as high as 6.8 vol.% are dispersed. Open/closed Z-scan measurements, degenerate multi-wave mixing and femtosecond pump-probe/transient grating measurements are conducted. It is shown that the observed fifth-order optical nonlinearity has the cascaded third-order contribution that becomes prominent at high concentrations of CdSe QDs. It is also shown that there are picosecond-scale intensity-dependent and nanosecond-scale intensity-independent decay components in absorptive and refractive nonlinearities. The former is caused by the Auger process, while the latter comes from the electron-hole recombination process. (paper)

  13. Optics education for machine operators in the semiconductor industry: moving beyond button pushing

    Karakekes, Meg; Currier, Deborah

    1995-10-01

    In the competitive semiconductor manufacturing industry, employees who operate equipment are able to make greater contributions if they understand how the equipment works. By understanding the 'why' behind the 'what', the equipment operators can better partner with other technical staff to produce quality integrated circuits efficiently and effectively. This additional knowledge also opens equipment operators to job enrichment and enlargement opportunities. Advanced Micro Devices (AMD) is in the process of upgrading the skills of its equipment operators. This paper is an overview of a pilot program that employs optics education to upgrade stepper operators' skills. The paper starts with stepper tasks that require optics knowledge, examines teaching methods, reports both end-of-course and three months post-training knowledge retention, and summarizes how the training has impacted the production floor.

  14. Fast optical detecting media based on semiconductor nanostructures for recording images obtained using charges of free photocarriers

    Kasherininov, P. G.; Tomasov, A. A.; Beregulin, E. V.

    2011-01-01

    Available published data on the properties of optical recording media based on semiconductor structures are reviewed. The principles of operation, structure, parameters, and the range of application for optical recording media based on MIS structures formed of photorefractive crystals with a thick layer of insulator and MIS structures with a liquid crystal as the insulator (the MIS LC modulators), as well as the effect of optical bistability in semiconductor structures (semiconductor MIS structures with nanodimensionally thin insulator (TI) layer, M(TI)S nanostructures). Special attention is paid to recording media based on the M(TI)S nanostructures promising for fast processing of highly informative images and to fabrication of optoelectronic correlators of images for noncoherent light.

  15. Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

    Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

    2018-03-01

    In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

  16. The system of digital-image optical microscope in semiconductor particle detector development

    Han Lixiang; Li Zhankui; Jin Genming; Wang Zhusheng; Xiao Guoqing

    2009-01-01

    Optical microscopic detection is very important in the process of semiconductor particle detector development. A system of digital-image optical microscope has been constructed with rather low price, which performance is comparable with the moderate-level imports. The system mounts powerful dry objective, and a 2μm resolution could be achieved. Observations with bright and dark field, polarized light,and interference light can be carried out on it. The system have large area on-line monitor,and the photographic device can be controlled by PC. It can be used in the control of defects and contaminations, pattern test, identification of crystal backing, inspection of the smoothness and the flatness of the crystal surface. It can also be used in some precise procedures, such as test, assembly, packaging and repairing. The quality of the bond could be examined by observing the appearance of the bond point and the microscopic structure of the solder. The surface fluctuation can be precisely measured under the microscope with the technology of multi-beam interference. In the article, the application of this system for semiconductor particle detector development has been illustrated, and the construction information has been described in detail. (authors)

  17. Deep UV Semiconductor Sources for Advanced Planetary Science Instruments, Phase II

    National Aeronautics and Space Administration — This proposal addresses the need for miniature, narrow-linewidth, deep UV optical sources that operate at very low ambient temperatures for use in advanced in situ...

  18. Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

    Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

    2018-02-01

    We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

  19. Optical implementation of neural learning algorithms based on cross-gain modulation in a semiconductor optical amplifier

    Li, Qiang; Wang, Zhi; Le, Yansi; Sun, Chonghui; Song, Xiaojia; Wu, Chongqing

    2016-10-01

    Neuromorphic engineering has a wide range of applications in the fields of machine learning, pattern recognition, adaptive control, etc. Photonics, characterized by its high speed, wide bandwidth, low power consumption and massive parallelism, is an ideal way to realize ultrafast spiking neural networks (SNNs). Synaptic plasticity is believed to be critical for learning, memory and development in neural circuits. Experimental results have shown that changes of synapse are highly dependent on the relative timing of pre- and postsynaptic spikes. Synaptic plasticity in which presynaptic spikes preceding postsynaptic spikes results in strengthening, while the opposite timing results in weakening is called antisymmetric spike-timing-dependent plasticity (STDP) learning rule. And synaptic plasticity has the opposite effect under the same conditions is called antisymmetric anti-STDP learning rule. We proposed and experimentally demonstrated an optical implementation of neural learning algorithms, which can achieve both of antisymmetric STDP and anti-STDP learning rule, based on the cross-gain modulation (XGM) within a single semiconductor optical amplifier (SOA). The weight and height of the potentitation and depression window can be controlled by adjusting the injection current of the SOA, to mimic the biological antisymmetric STDP and anti-STDP learning rule more realistically. As the injection current increases, the width of depression and potentitation window decreases and height increases, due to the decreasing of recovery time and increasing of gain under a stronger injection current. Based on the demonstrated optical STDP circuit, ultrafast learning in optical SNNs can be realized.

  20. Structural and optical studies of local disorder sensitivity in natural organic-inorganic self-assembled semiconductors

    Vijaya Prakash, G; Pradeesh, K [Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi, New Delhi (India); Ratnani, R; Saraswat, K [Department of Pure and Applied Chemistry, MDS University, Ajmer (India); Light, M E [School of Chemistry, University of Southampton, Southampton (United Kingdom); Baumberg, J J, E-mail: prakash@physics.iitd.ac.i [Nanophotonic Centre, Cavendish Laboratory, University Cambridge, Cambridge CB3 OHE (United Kingdom)

    2009-09-21

    The structural and optical spectra of two related lead iodide (PbI) based self-assembled hybrid organic-inorganic semiconductors are compared. During the synthesis, depending on the bridging of organic moiety intercalated between the PbI two-dimensional planes, different crystal structures are produced. These entirely different networks show different structural and optical features, including excitonic bandgaps. In particular, the modified organic environment of the excitons is sensitive to the local disorder both in single crystal and thin film forms. Such information is vital for incorporating these semiconductors into photonic device architectures.

  1. All-optical clocked flip-flops and random access memory cells using the nonlinear polarization rotation effect of low-polarization-dependent semiconductor optical amplifiers

    Wang, Yongjun; Liu, Xinyu; Tian, Qinghua; Wang, Lina; Xin, Xiangjun

    2018-03-01

    Basic configurations of various all-optical clocked flip-flops (FFs) and optical random access memory (RAM) based on the nonlinear polarization rotation (NPR) effect of low-polarization-dependent semiconductor optical amplifiers (SOA) are proposed. As the constituent elements, all-optical logic gates and all-optical SR latches are constructed by taking advantage of the SOA's NPR switch. Different all-optical FFs (AOFFs), including SR-, D-, T-, and JK-types as well as an optical RAM cell were obtained by the combination of the proposed all-optical SR latches and logic gates. The effectiveness of the proposed schemes were verified by simulation results and demonstrated by a D-FF and 1-bit RAM cell experimental system. The proposed all-optical clocked FFs and RAM cell are significant to all-optical signal processing.

  2. Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

    Kim, Jimyung; Delfyett, Peter J

    2008-07-21

    We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

  3. Semiconductor Laser Complex Dynamics: From Optical Neurons to Optical Rogue Waves

    2017-02-11

    completing and reviewing the collection of information. Send comments regarding this burden estimate or   any other aspect of this collection of...Fisica, Universitat Politecnica de Catalunya (UPC), Colom 11, E-08222 Terrassa, Spain (Dated: February 11, 2017) ∗ cristina.masoller@upc.edu...optics communi- cations, optical data storage, life sciences applications, material processing and sensing. They have a huge economic impact and are

  4. Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

    Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

    2009-04-01

    We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees.

  5. Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

    Langley, L.N.; Elkin, M.D.; Edege, C.

    1999-01-01

    In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitter......, the lasers have a free-running summed linewidth of 6 MHz and the OPLL has a feedback bandwidth of 70 MHz, A state-of-the-art performance is obtained, with a total phase-error variance of 0.05 rad(2) (1-GHz bandwidth) and a carrier phase-error variance of 7x10(-4) rad(2) in a 15-MHz bandwidth. Carriers...... are generated in the range of 7-14 GHz. The OPLL transmitter has been fully packaged for practical use in field trials. This is the first time this type of transmitter has been fabricated in a packaged state which is a significant advance on the route to practical application....

  6. The role of input chirp on phase shifters based on slow and fast light effects in semiconductor optical amplifiers

    Xue, Weiqi; Chen, Yaohui; Öhman, Filip

    2009-01-01

    We experimentally investigate the initial chirp dependence of slow and fast light effects in a semiconductor optical amplifier followed by an optical filter. It is shown that the enhancement of the phase shift due to optical filtering strongly depends on the chirp of the input optical signal. We...... demonstrate ~120º phase delay as well as ~170º phase advance at a microwave frequency of 19 GHz for different optimum values of the input chirp. The experimental results are shown to be in good agreement with numerical results based on a four-wave mixing model. Finally, a simple physical explanation based...

  7. SLC polarized beam source electron optics design

    Eppley, K.R.; Lavine, T.L.; Early, R.A.; Herrmannsfeldt, W.B.; Miller, R.H.; Schultz, D.C.; Spencer, C.M.; Yeremian, A.D.

    1991-05-01

    This paper describes the design of the beam-line from the polarized electron gun to the linac injector in the Stanford Linear Collider (SLC). The polarized electron source is a GaAs photocathode, requiring 10 -11 -Torr-range pressure for adequate quantum efficiency and longevity. The photocathode is illuminated by 3-nsec-long laser pulses. The quality of the optics for the 160-kV beam is crucial since electron-stimulated gas desorption from beam loss in excess of 0.1% of the 20-nC pulses may poison the photocathode. Our design for the transport line consists of a differential pumping region isolated by a pair of valves. Focusing is provided by a pair of Helmholtz coils and by several iron-encased solenoidal lenses. Our optics design is based on beam transport simulations using 2 1/2-D particle-in-cell codes to model the gun and to solve the fully-relativistic time-dependent equations of motion in three dimensions for electrons in the presence of azimuthally symmetric electromagnetic fields. 6 refs., 6 figs

  8. Microwave phase shifter with controllable power response based on slow-and fast-light effects in semiconductor optical amplifiers

    Xue, Weiqi; Sales, Salvador; Capmany, Jose

    2009-01-01

    with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of 240° at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique...

  9. Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm Invited Paper

    D. Bimberg; C. Meuer; M. L(a)mmlin; S. Liebich; J. Kim; A. Kovsh; I. Krestnikov; G. Eisenstein

    2008-01-01

    @@ The dynamics of nonlinear processes in quantum dot (QD) semiconductor optical amplifiers (SOAs) are investigated. Using small-signal measurements, the suitabilities of cross-gain and cross-phase modulation as well as four wave mixing (FWM) for wavelength conversion are examined. The cross-gain modulation is found to be suitable for wavelength conversion up to a frequency of 40 GHz.

  10. Output power PDF of a saturated semiconductor optical amplifier: Second-order noise contributions by path integral method

    Öhman, Filip; Mørk, Jesper; Tromborg, Bjarne

    2007-01-01

    We have developed a second-order small-signal model for describing the nonlinear redistribution of noise in a saturated semiconductor optical amplifier. In this paper, the details of the model are presented. A numerical example is used to compare the model to statistical simulations. We show that...

  11. Optimisation of 40 Gb/s wavelength converters based on four-wave mixing in a semiconductor optical amplifier

    Schulze, K.; Petersen, Martin Nordal; Herrera, J.

    2007-01-01

    The optimum operating powers and wavelengths for a 40 Gb/s wavelength converter based on four-wave mixing in a semiconductor 14 optical amplifier are inferred from experimental results. From these measurements, some general rules of thumb are derived for this kind of devices. Generally, the optim...

  12. Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

    Champagne, A.; Lestrade, Michel; Camel, Jérôme

    2004-01-01

    The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SO...

  13. Fundamentals and Applications of Semiconductor Nanocrystals : A study on the synthesis, optical properties, and interactions of quantum dots

    Koole, R.

    2008-01-01

    This thesis focuses on both the fundamental aspects as well as applications of colloidal semiconductor nanocrystals, also called quantum dots (QDs). Due to the unique size-dependent optical and electronic properties of QDs, they hold great promise for a wide range of applications like solar cells,

  14. Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

    Riahi, H., E-mail: hassenriahi1987@gmail.com [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Thevenard, L. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Maaref, M.A. [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Gallas, B. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Lemaître, A. [Laboratoire de Photonique et de Nanostructures – CNRS, Route de Nozay, 91460 Marcoussis (France); Gourdon, C [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France)

    2015-12-01

    A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO{sub 2} buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO{sub 2} layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO{sub 2}/ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO{sub 2} on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO{sub 2} and ZnO on the ferromagnetic properties of GaMnAs.

  15. Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

    Riahi, H.; Thevenard, L.; Maaref, M.A.; Gallas, B.; Lemaître, A.; Gourdon, C

    2015-01-01

    A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO 2 buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO 2 layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO 2 /ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO 2 on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO 2 and ZnO on the ferromagnetic properties of GaMnAs

  16. Tunable and broadband microwave frequency combs based on a semiconductor laser with incoherent optical feedback

    Zhao Mao-Rong; Wu Zheng-Mao; Deng Tao; Zhou Zhen-Li; Xia Guang-Qiong

    2015-01-01

    Based on a semiconductor laser (SL) with incoherent optical feedback, a novel all-optical scheme for generating tunable and broadband microwave frequency combs (MFCs) is proposed and investigated numerically. The results show that, under suitable operation parameters, the SL with incoherent optical feedback can be driven to operate at a regular pulsing state, and the generated MFCs have bandwidths broader than 40 GHz within a 10 dB amplitude variation. For a fixed bias current, the line spacing (or repetition frequency) of the MFCs can be easily tuned by varying the feedback delay time and the feedback strength, and the tuning range of the line spacing increases with the increase in the bias current. The linewidth of the MFCs is sensitive to the variation of the feedback delay time and the feedback strength, and a linewidth of tens of KHz can be achieved through finely adjusting the feedback delay time and the feedback strength. In addition, mappings of amplitude variation, repetition frequency, and linewidth of MFCs in the parameter space of the feedback delay time and the feedback strength are presented. (paper)

  17. High powered pulsed plasma enhanced deposition of thin film semiconductor and optical materials

    Llewellyn, I.P.; Sheach, K.J.A.; Heinecke, R.A.

    1993-01-01

    A glow discharge deposition technique is described which allows the deposition of a large range of high quality materials without the requirement for substrate heating. The method is differentiated from conventional plasma deposition techniques in that a much higher degree of dissociation is achieved in the gases prior to deposition, such that thermally activated surface reactions are no longer required in order to produce a dense film. The necessary discharge intensity (>300Wcm -3 ) is achieved using a high power radio frequency generator which is pulsed at a low duty cycle (1%) to keep the average energy of the discharge low (100W), in order to avoid the discharge heating the substrate. In addition, by varying the gas composition between discharge pulses, layered structures of materials can be produced, with a disordered interface about 8 A thick. Various uses of the technique in semiconductor and optical filter production are described, and the properties of films deposited using these technique are presented. (orig.)

  18. Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

    Andreeva, E V; Il' chenko, S N; Lobintsov, A A; Shramenko, M V [Superlum Diodes Ltd., Moscow (Russian Federation); Ladugin, M A [' Sigm Plyus' Ltd, Moscow (Russian Federation); Marmalyuk, A A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

    2013-11-30

    A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)

  19. Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

    Andreeva, E V; Il'chenko, S N; Lobintsov, A A; Shramenko, M V; Ladugin, M A; Marmalyuk, A A; Yakubovich, S D

    2013-01-01

    A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)

  20. Switchable semiconductor optical fiber laser incorporating AWG and broadband FBG with high SMSR

    Ahmad, H; Zulkifli, M Z; Thambiratnam, K; Latiff, A A; Harun, S W

    2009-01-01

    In this paper we propose and demonstrate a switchable wavelength fiber laser (SWFL) using a semiconductor optical amplifier (SOA) together with an arrayed waveguide grating (AWG). The proposed SOA-based SWFL is capable of generating up to 14 lasing channels from 1530.1 nm to 1534.9 nm at a channel spacing of 0.8 nm (100 GHz) and a bandwidth of 11.8 and 10.2 nm respectively. The EDFA-based SWFL has a higher peak power at –5 dBm, while to SOA-based SWFL has a peak power of only –10 dBm. However, the SOA-based SWFL exhibits a much better SMSR of between 10 to 20 dB as compared to the SMSR of the EDFA-based SWFL due to the inhomogeneous broadening properties of the SOA

  1. Evaluation of electrical, structural, thermal and optical properties of Co_3O_4 semiconductor

    Dias, Jeferson A.; Maestrelli, Sylma C.; Morelli, Marcio R.

    2016-01-01

    Among the new semiconductors, the tricobalt tetraoxide is a material of increasing interest; nevertheless, there is a limited number of studies about its properties. Thus, this work has investigated the structural, thermal, optical and electronic properties of Co_3O_4 and its correlation with structure and microstructure. For that, the commercial material was characterized by X-ray diffraction, thermal analysis, diffuse reflectance, FTIR and impedance spectroscopy. The results have shown that the assessed Co_3O_4 has non-stoichiometric spinel structure, presenting a band gap energy capable to completely absorb the visible spectra (1.75 eV). Furthermore, it can be visualized in infrared spectra the bands related to Co-O bonds. The activation energy of electric conduction was 0.35 eV related to the hopping mechanism. Therefore, the results confirm the potentiality of use of Co_3O_4 in optoelectronic devices due to its promising properties for technological utilization. (author)

  2. Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

    Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.

    1981-01-01

    A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

  3. Polar optical phonons in a semiconductor quantum-well: The complete matching problem

    Nieto, J.M.; Comas, F.

    2007-01-01

    Confined polar optical phonons in a semiconductor quantum-well (QW) are studied by applying a phenomenological theory which was proposed a few years ago and is based on a continuum approach. This theory considers the coupled character of the electromechanical vibrations and takes due account of both the electric and mechanical boundary conditions. In the present work, we have applied the so-called complete matching problem in contrast with all previous published works on the subject, where more restrictive approximate boundary conditions has been applied. We also consider the effects of strains at the interfaces on the phonon spectra. Comparisons with previous works are made, while we focused on the study of a ZnTe/CdTe/ZnTe QW

  4. Etching of semiconductors and metals by the photonic jet with shaped optical fiber tips

    Pierron, Robin; Lecler, Sylvain; Zelgowski, Julien; Pfeiffer, Pierre; Mermet, Frédéric; Fontaine, Joël

    2017-10-01

    The etching of semiconductors and metals by a photonic jet (PJ) generated with a shaped optical fiber tip is studied. Etched marks with a diameter of 1 μm have been realized on silicon, stainless steel and titanium with a 35 kHz pulsed laser, emitting 100 ns pulses at 1064 nm. The selection criteria of the fiber and its tip are discussed. We show that a 100/140 silica fiber is a good compromise which takes into account the injection, the working distance and the energy coupled in the higher-order modes. The energy balance is performed on the basis of the known ablation threshold of the material. Finally, the dependence between the etching depth and the number of pulses is studied. Saturation is observed probably due to a redeposition of the etched material, showing that a higher pulse energy is required for deeper etchings.

  5. Impact of slow-light enhancement on optical propagation in active semiconductor photonic crystal waveguides

    Chen, Yaohui; de Lasson, Jakob Rosenkrantz; Gregersen, Niels

    2015-01-01

    We derive and validate a set of coupled Bloch wave equations for analyzing the reflection and transmission properties of active semiconductor photonic crystal waveguides. In such devices, slow-light propagation can be used to enhance the material gain per unit length, enabling, for example......, the realization of short optical amplifiers compatible with photonic integration. The coupled wave analysis is compared to numerical approaches based on the Fourier modal method and a frequency domain finite element technique. The presence of material gain leads to the build-up of a backscattered field, which...... is interpreted as distributed feedback effects or reflection at passive-active interfaces, depending on the approach taken. For very large material gain values, the band structure of the waveguide is perturbed, and deviations from the simple coupled Bloch wave model are found....

  6. Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination

    Rodrigo, Peter John; Lim, May; Saloma, Caesar

    2001-01-01

    An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (λ=830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, λ/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker

  7. Theory of Pulse Train Amplification Without Patterning Effects in Quantum Dot Semiconductor Optical Amplifiers

    Uskov, Alexander V.; Berg, Tommy Winther; Mørk, Jesper

    2004-01-01

    A theory for pulse amplification and saturation in quantum dot (QD) semiconductor optical amplifiers (SOAs) is developed. In particular, the maximum bit rate at which a data stream of pulses can be amplified without significant patterning effects is investigated. Simple expressions are derived th...... energies of 0.2–0.4 pJ. The superiority of QD SOAs is based on: 1) the faster achievement of the regime of maximum gain in QD SOAs compared to QW and bulk SOAs and 2) the lower effective cross section of photon-carrier interaction in QDs....... that clearly show the dependence of the maximum bit rate on material and device parameters. A comparative analysis of QD, quantum well (QW), and bulk SOAs shows that QD SOAs may have superior properties; calculations predict patterning-free amplification up to bit rates of 150–200 Gb/s with pulse output...

  8. Band Engineering Small Bandgap p-Type Semiconductors: Investigations of their Optical and Photoelectrochemical Properties

    Zoellner, Brandon

    Mixed-metal oxides containing Mn(II), Cu(I), Ta(V), Nb(V), and V(V) were investigated for their structures and properties as new p-type semiconductors and in the potential applications involving the photocatalytic conversion of water into hydrogen and oxygen. Engineering of the bandgaps was achieved by combining metal cations that have halffilled (Mn 3d5) or filled (Cu 3d10) d-orbitals together with metal cations that have empty (V/Nb/Ta 3/4/5 d0) d-orbitals. The research described herein focuses on the synthesis, optical, electronic, and photocatalytic properties of the metal-oxide semiconductors MnV2O6, Cu3VO 4, CuNb1-xTaxO3, and Cu5(Ta1-xNbx)11O30. Powder X-ray diffraction was used to probe their phase purity as well as atomic-level crystallographic details, i.e. shifts of lattice parameters, chemical compositions, and changes in local bonding environments. Optical measurements revealed visible-light bandgap sizes of ˜1.17 eV (Cu3VO4), ˜1.45 eV (MnV2O6), ˜1.89-1.97 eV (CuNb1-xTa xO3), and ˜1.97-2.50 eV (Cu5(Ta1-xNb x)11O30). The latter two were found to systematically vary as a function of composition. Electrochemical impedance spectroscopy measurements of MnV2O6 and Cu3VO 4 provided the first experimental characterization of the energetic positions of the valence and conduction bands with respect to the water oxidation and reduction potentials, as well as confirmed the p-type nature of each semiconductor. The valence and conduction band energies were found to be suitable for driving either one or both of the water-splitting half reaction (i.e. 2H+ → H2 and 2H2O → O2 + 4H+). Photoelectrochemical measurements on polycrystalline films of the Cu(I)-based semiconductors under visible-light irradiation produced cathodic currents indicative of p-type semiconductor character and chemical reduction at their surfaces in the electrolyte solution. The stability of the photocurrents was increased by the addition of CuO oxide particles either externally deposited or

  9. Microscopic theory of coherent and incoherent optical properties of semiconductor heterostructures

    Schaefer, Martin

    2008-09-02

    An important question is whether there is a regime in which lasing from indirect semiconductors is possible. Thus, we discuss this question in this thesis. It is shown that under incoherent emission conditions it is possible to create an exciton condensate in multiple-quantum-well (MQW) systems. The influence of a MQW structure on the exciton lifetime is investigated. For the description of the light-matter interaction of a QW in the coherent excitation regime, the semiconductor Bloch equation (SBE) are used. The incoherent regime is described by the semiconductor luminescence equations (SLE). In principle it is even possible to couple SBE and SLE. The resulting theory is able to describe interactions between coherent and incoherent processes we investigate both, the coherent and the incoherent light-emission regime. Thus we define the investigated system and introduce the many-body Hamiltonian that describes consistently the light-matter interaction in the classical and the quantum limit. We introduce the SBE that allow to compute the light-matter interaction in the coherent scenario. The extended scattering model is used to investigate the absorption of a Ge QW for different time delays after the excitations. In this context, we analyze whether there is a regime in which optical gain can be realized. Then we apply a transfer-matrix method to include into our calculations the influence of the dielectric environment on the optical response. Thereafter the SLE for a MQW system are introduced. We derive a scheme that allows for decoupling environmental effects from the pure PL-emission properties of the QW. The PL of the actual QW system is obtained by multiplying this filter function and the free-space PL that describes the quantum emission into a medium with spatially constant background-refractive index. It is studied how the MQW-Bragg structure influences the PL-emission properties compared to the emission of a single QW device. As a last feature, it is shown

  10. Advanced materials for the optical delay line of frequency pulse modulator on the basis of semiconductor laser

    Abrarov, S.M.

    1999-01-01

    In the paper some materials which can be sued as an optical delay line of the pulse frequency modulator are considered. The structure and the principle are described as a modulator consisting of a laser diode with two Fabry Perot resonators and an optical wave guide providing a feedback loop. The optical wave guide fulfills the function of delay line and links the two resonators. The pulse sequence of the radiation of the semiconductor laser arises due to failure and recovery of optical generation. The pulse frequency modulation can be carried out by the action of electrical tension field on the electro optic martial of the wave guide. The selection of three electro-optic crystals for making of the optical wave guide of the considered modulator is justified. (author)

  11. Calibration of Ge(Li) semiconductor detector by method using agar volume source

    Yanase, Nobuyuki; Kasai, Atsushi

    1979-12-01

    The Ge(Li) semiconductor detector was calibrated for measurements of environmental samples. The radioisotopes used for standard sources are 22 Na, 51 Cr, 56 Co, 57 Co, 133 Ba, 137 Cs, 144 Ce and 241 Am. These are mixed with hot agar aqueous solution and fixed uniformly in a cylindrical plastic case in cooling. The agar volume source is advantageous in handling over the fluid aqueous source. The prepared cylindrical standard sources are in diameters 6 and 8 cm and thicknesses 1, 5, 10, 20, 30 and 40 mm (only for 8 cm diameter). The radioactivities of prepared standard sources are between 0.03 μCi and 0.2 μCi. It takes only a week to make the calibration except data processing. The obtained full energy peak efficiency curves include 5 - 10% error due to preparation of agar source, reference radioactivity data of purchased standard solutions, reference data of branching ratio of gamma-ray and sum effect. The efficiency curves, however, are sufficient for quantitative analysis of environmental samples. (author)

  12. All-optical OR/NOR Bi-functional logic gate by using cross-gain modulation in semiconductor optical amplifiers

    Choi, Kyoung Sun; Byun, Young Tae; Lee, Seok; Jhon, Young Min

    2010-01-01

    An OR/NOR bi-functional all-optical logic gate has been experimentally demonstrated at 10 Gbit/s by using cross-gain modulation (XGM) in only 2 semiconductor optical amplifiers (SOAs). One SOA was used for NOR operation and the other SOA was used for inversion to obtain OR operation. Numerical simulation has also been performed, which coincided well with the experimental results.

  13. General Method for Calculating the Response and Noise Spectra of Active Fabry-Perot Semiconductor Waveguides With External Optical Injection

    Blaaberg, Søren; Mørk, Jesper

    2009-01-01

    We present a theoretical method for calculating small-signal modulation responses and noise spectra of active Fabry-Perot semiconductor waveguides with external light injection. Small-signal responses due to either a modulation of the pump current or due to an optical amplitude or phase modulatio...... amplifiers and an injection-locked laser. We also demonstrate the applicability of the method to analyze slow and fast light effects in semiconductor waveguides. Finite reflectivities of the facets are found to influence the phase changes of the injected microwave-modulated light....

  14. Time-resolved photoluminescence spectroscopy of semiconductors for optical applications beyond the visible spectral range

    Chernikov, Alexey A.

    2011-07-01

    The work discussed in this thesis is focused on the experimental studies regarding these three steps: (1) investigation of the fundamental effects, (2) characterization of new material systems, and (3) optimization of the semiconductor devices. In all three cases, the experimental technique of choice is photoluminescence (PL) spectroscopy. The thesis is organized as follows. Chapter 2 gives a summary of the PL properties of semiconductors relevant for this work. The first section deals with the intrinsic processes in an ideal direct band gap material, starting with a brief summary of the theoretical background followed by the overview of a typical PL scenario. In the second part of the chapter, the role of the lattice-vibrations, the internal electric fields as well as the influence of the band-structure and the dielectric environment are discussed. Finally, extrinsic PL properties are presented in the third section, focusing on defects and disorder in real materials. In chapter 3, the experimental realization of the spectroscopic studies is discussed. The time-resolved photoluminescence (TRPL) setup is presented, focusing on the applied excitation source, non-linear frequency mixing, and the operation of the streak camera used for the detection. In addition, linear spectroscopy setup for continous-wave (CW) PL and absorption measurements is illustrated. Chapter 4 aims at the study of the interactions between electrons and lattice-vibrations in semiconductor crystals relevant for the proper description of carrier dynamics as well as the heat-transfer processes. The presented discussion covers the experimental studies of many-body effects in phonon-assisted emission of semiconductors due to the carriercarrier Coulomb-interaction. The corresponding theoretical background is discussed in detail in chapter 2. The investigations are focused on the two main questions regarding electron-hole plasma contributions to the phonon-assisted light-matter interaction as well as

  15. Noise caused by semiconductor lasers in high-speed fiber-optic links

    Olsen, C. M.; Stubkjær, Kristian; Olesen, H.

    1989-01-01

    Theoretical and experimental results are presented for the signal-to-noise (S/N) ratio caused by mode partition noise, intensity noise, and reflection-induced noise in optical data links. Under given conditions an additional noise source with a S /N ratio of 20 dB will cause a power penalty of 1 d...

  16. The next generation in optical transport semiconductors: IC solutions at the system level

    Gomatam, Badri N.

    2005-02-01

    In this tutorial overview, we survey some of the challenging problems facing Optical Transport and their solutions using new semiconductor-based technologies. Advances in 0.13um CMOS, SiGe/HBT and InP/HBT IC process technologies and mixed-signal design strategies are the fundamental breakthroughs that have made these solutions possible. In combination with innovative packaging and transponder/transceiver architectures IC approaches have clearly demonstrated enhanced optical link budgets with simultaneously lower (perhaps the lowest to date) cost and manufacturability tradeoffs. This paper will describe: *Electronic Dispersion Compensation broadly viewed as the overcoming of dispersion based limits to OC-192 links and extending link budgets, *Error Control/Coding also known as Forward Error Correction (FEC), *Adaptive Receivers for signal quality monitoring for real-time estimation of Q/OSNR, eye-pattern, signal BER and related temporal statistics (such as jitter). We will discuss the theoretical underpinnings of these receiver and transmitter architectures, provide examples of system performance and conclude with general market trends. These Physical layer IC solutions represent a fundamental new toolbox of options for equipment designers in addressing systems level problems. With unmatched cost and yield/performance tradeoffs, it is expected that IC approaches will provide significant flexibility in turn, for carriers and service providers who must ultimately manage the network and assure acceptable quality of service under stringent cost constraints.

  17. Network connectivity enhancement by exploiting all optical multicast in semiconductor ring laser

    Siraj, M.; Memon, M. I.; Shoaib, M.; Alshebeili, S.

    2015-03-01

    The use of smart phone and tablet applications will provide the troops for executing, controlling and analyzing sophisticated operations with the commanders providing crucial documents directly to troops wherever and whenever needed. Wireless mesh networks (WMNs) is a cutting edge networking technology which is capable of supporting Joint Tactical radio System (JTRS).WMNs are capable of providing the much needed bandwidth for applications like hand held radios and communication for airborne and ground vehicles. Routing management tasks can be efficiently handled through WMNs through a central command control center. As the spectrum space is congested, cognitive radios are a much welcome technology that will provide much needed bandwidth. They can self-configure themselves, can adapt themselves to the user requirement, provide dynamic spectrum access for minimizing interference and also deliver optimal power output. Sometimes in the indoor environment, there are poor signal issues and reduced coverage. In this paper, a solution utilizing (CR WMNs) over optical network is presented by creating nanocells (PCs) inside the indoor environment. The phenomenon of four-wave mixing (FWM) is exploited to generate all-optical multicast using semiconductor ring laser (SRL). As a result same signal is transmitted at different wavelengths. Every PC is assigned a unique wavelength. By using CR technology in conjunction with PC will not only solve network coverage issue but will provide a good bandwidth to the secondary users.

  18. Optical characterisation of III-V nitride-based multiphase and diluted magnetic semiconductors

    Wegscheider, M.

    2009-01-01

    The present work is devoted to the investigation of the optical properties of transition metal doped Gallium nitride. The Gallium nitride layers are epitaxially grown in a full metalorganic chemical vapour deposition process whereas the transition metals iron or manganese as well as the n and p-type dopants silicon and magnesium are incorporated simultaneously. Background and driving force of the realization of such material systems is basically the evocation of ferromagnetic spin alignment where free carriers ensure the correspondence between the localized spin state provided by the metal ions. The production of completely new devices for semiconductor industries based on the possibility to switch on or off the ferrimagnetic alignment by changing the free carrier concentration can be expected in the near future. In this context photoluminescence studies in the ultraviolet and mid infrared spectral range at temperatures between the liquid helium point and room temperature at atmospheric pressure were made. These measurements basically provide information on optical transitions between the conduction and valence band and deep defects as well as on crystal field forced transitions within the d-orbitals of the metal ion involved. In this context valuable knowledge could have been gained on doping concentrations, growth fashions and parameters, formation of secondary phases as well as on the doping efficiency and incorporation sites of the metal atoms. (author) [de

  19. Electronic, elastic and optical properties of ZnGeP{sub 2} semiconductor under hydrostatic pressures

    Tripathy, S.K.; Kumar, V., E-mail: vkumar52@hotmail.com

    2014-03-15

    The electronic, elastic and optical properties of zinc germanium phosphide, ZnGeP{sub 2}, semiconductor have been studied using local density approximation (LDA) method within the density functional theory (DFT). The lattice constants (a and c), band structure, density of states (DOS), bulk modulus (B) and pressure derivative of bulk modulus (B′) have been discussed. The value of pseudo-direct band gap (E{sub g}) at Γ point has been calculated. The pressure dependences of elastic stiffness coefficients (C{sub ij}), Zener anisotropy factor (A), Poisson's ratio (ν), Young modulus (Y) and shear modulus (G) have also been calculated. The ratio of B/G shows that that ZnGeP{sub 2} is ductile in nature. The optical properties have been discussed in detail under three different pressures in the energy range 0–22 eV. The calculated values of all parameters are compared with the available experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.

  20. Method of developing all-optical trinary JK, D-type, and T-type flip-flops using semiconductor optical amplifiers.

    Garai, Sisir Kumar

    2012-04-10

    To meet the demand of very fast and agile optical networks, the optical processors in a network system should have a very fast execution rate, large information handling, and large information storage capacities. Multivalued logic operations and multistate optical flip-flops are the basic building blocks for such fast running optical computing and data processing systems. In the past two decades, many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitations because of the low switching response of active devices. The frequency encoding technique has been used because of its many advantages. It can preserve its identity throughout data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. The action of polarization-rotation-based very fast switching of semiconductor optical amplifiers increases processing speed. At the same time, tristate optical flip-flops increase information handling capacity.

  1. Group IV all-semiconductor spintronics. Materials aspects and optical spin selection rules

    Sircar, Narayan

    2012-04-03

    In the scope of the present thesis various aspects for the realization of spintronic applications based on group IV semiconductors are discussed. This work comprises a refined material characterization of the magnetic semiconductor GeMn. We furthermore present efforts to utilize this material as spin injector for a Si-based optical spintronic device. Applying transmission electron microscopy and atom probe tomography, we are able to resolve a vertical anisotropy in the self-assembly, leading to the stacking of well-defined clusters in the growth direction. Three-dimensional atom distribution maps confirm that clusters are built from a nonstoichiometric GeMn alloy and exhibit a high-Mn-concentration core with a decreasing Mn concentration toward a shell. An amorphous nature of the cluster cores as well as the crystallinity of the shells, coherent with the surrounding Ge lattice, are revealed in scanning transmission electron microscopy. We localize a strain field surrounding each GeMn cluster by scanning transmission electron microscopy. The importance of strain to the stacking phenomenon of the clusters becomes clear in studies of Ge/GeMn superlattice structures, where a vertical spatial correlation of clusters over 30 nm-thick Ge spacer layers is observed. We present evidence that electrical transport properties of the p-type GeMn thin films fabricated on high-resistivity Ge substrates are severely influenced by parallel conduction through the substrate. It is shown that substrate conduction persists also for wellconducting degenerate p-type reference thin films, giving rise to an effective two-layer conduction scheme. GeMn thin films fabricated on these substrates exhibit only a negligible magnetoresistance effect. Before integrating GeMn in an optical spintronic device, some key aspects important for an understanding of the optical injection and detection of carrier spins in Si and Si-based heterostructures are clarified in the second part of this thesis. In

  2. Functional swept source optical coherence tomography

    Blatter, C.

    2013-01-01

    Optical coherence tomography (OCT) is a non-invasive imaging modality capable of providing information about a sample structure along the three spatial dimensions with micrometer scale resolution. A new chapter opened with the development of functional OCT that provides additional information to the standard structural imaging. Among those extensions is Doppler OCT (D-OCT) that yields knowledge about the motion of the sample and/or its substructure. Its main application in biomedical imaging is the assessment of blood flow. D-OCT is therefore often associated with blood velocity measurement and recently with the visualization of the vascular network. Blood flow and vasculature are important markers of tissue health. Their assessment provides crucial information for diagnostics, treatment planning and monitoring. OCT is in a good position, as a non-invasive technique, to become an alternative to current fluorescence based techniques, allowing thereby also more frequent examination and broader screenings and, as a high resolution modality, to give insight into potential changes at the capillary level. An important challenge of in vivo imaging is patient motion that decreases the quality of acquisitions. One solution to that issue is high-speed imaging. Recently swept source OCT (SSOCT) revealed to be an efficient technology to achieve high-speed. This thesis investigates the use of swept sources for qualitative and quantitative vasculature imaging. It is presented via five journal papers that form its backbone. Prior to that, main concepts of FDOCT, D-OCT and SS systems are presented. The first paper reports a SSOCT system for skin imaging. In standard OCT systems, improving the lateral resolution comes at a cost of reduced depth of focus. This should be avoided in order to be able to assess different vascular beds in depth while keeping the speed advantage of FDOCT. Employing a Bessel beam for illumination of the sample allows circumventing this issue. The image

  3. Optical properties of single semiconductor nanowires and nanowire ensembles. Probing surface physics by photoluminescence spectroscopy

    Pfueller, Carsten

    2011-06-27

    This thesis presents a detailed investigation of the optical properties of semiconductor nanowires (NWs) in general and single GaN NWs and GaN NW ensembles in particular by photoluminescence (PL) spectroscopy. NWs are often considered as potential building blocks for future nanometer-scaled devices. This vision is based on several attractive features that are generally ascribed to NWs. For instance, they are expected to grow virtually free of strain and defects even on substrates with a large structural mismatch. In the first part of the thesis, some of these expectations are examined using semiconductor NWs of different materials. On the basis of the temperature-dependent PL of Au- and selfassisted GaAs/(Al,Ga)As core-shell NWs, the influence of foreign catalyst particles on the optical properties of NWs is investigated. For the Au-assisted NWs, we find a thermally activated, nonradiative recombination channel, possibly related to Auatoms incorporated from the catalyst. These results indicate the limited suitability of catalyst-assisted NWs for optoelectronic applications. The effect of the substrate choice is studied by comparing the PL of ZnO NWs grown on Si, Al{sub 2}O{sub 3}, and ZnO substrates. Their virtually identical optical characteristics indicate that the synthesis of NWs may indeed overcome the constraints that limit the heteroepitaxial deposition of thin films. The major part of this thesis discusses the optical properties of GaN NWs grown on Si substrates. The investigation of the PL of single GaN NWs and GaN NW ensembles reveals the significance of their large surface-to-volume ratio. Differences in the recombination behavior of GaNNW ensembles and GaN layers are observed. First, the large surface-to-volume ratio is discussed to be responsible for the different recombination mechanisms apparent in NWs. Second, certain optical features are only found in the PL of GaN NWs, but not in that of GaN layers. An unexpected broadening of the donor

  4. Optical studies of wide bandgap semiconductor epilayers and quantum well structures

    May, L.

    1998-09-01

    This thesis contains research on the optical properties of wide bandgap semiconductors, which are potentially useful for blue and UV emitters. The research covers materials from both the II-VI and III-V groups. In Chapter 1, a general introduction to the topic of blue and UV emitters is presented. The properties required of materials used for these applications are outlined, and the technological significance of these devices is discussed, in order to place this work into context. In Chapter 2, the main experimental techniques used in this work are outlined. These are photoluminescence spectroscopy (PL), photoluminescence excitation spectroscopy (PLE) and white light reflectivity. Chapter 3 begins with a discussion of the properties of ZnS. Then, following a brief outline of the sample growth technique, the optical studies of a series of ZnS single epitaxial layers are presented. The samples were characterised by photoluminescence spectroscopy, and the effect of strain on their properties studied in some detail. The results of tellurium and nitrogen doping studies are also presented. The chapter concludes with a study of ZnCdS epilayers. Chapter 4 begins with the growth and PL characterisation of a series of ZnS/ZnCdS multiple quantum well structures. Optically pumped stimulated emission experiments were then carried out on selected MQW samples. The results of these experiments are presented in the latter part of Chapter 4, followed by a discussion of the lasing mechanisms in II-VI quantum well structures. In Chapter 5, the growth and characterisation of a series of GaN epilayers are described. After an introduction outlining some of the key properties of GaN, the MOCVD growth procedure is described. Studies of the samples by PL, PLE and reflectivity are then presented. Finally, a study of p-type GaN epilayers is presented, and excimer laser annealing is investigated as a possible means of activating the dopant

  5. Fabrication of highly nonlinear germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots using atomization doping process and its optical nonlinearity.

    Ju, Seongmin; Watekar, Pramod R; Han, Won-Taek

    2011-01-31

    Germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots (SQDs) in the core was fabricated by using the atomization process in modified chemical vapor deposition (MCVD) process. The absorption bands attributed to PbTe semiconductor quantum dots in the fiber core were found to appear at around 687 nm and 1055 nm. The nonlinear refractive index measured by the long-period fiber grating (LPG) pair method upon pumping with laser diode at 976.4 nm was estimated to be ~1.5 × 10(-16) m2/W.

  6. Systematization of efficiency correction for gamma-ray disk sources with semiconductor detectors

    Chatani, Hiroshi

    1999-01-01

    Full energy peak efficiency correction for disk sources has been systematically studied using the mapping method with two high-purity germanium detectors and two low-energy photon spectrometers. The following are found using only single-line (i.e., no coincidence summing loses) γ-rays: (1) The efficiency distributions on a plane parallel to the entrance window of semiconductor detectors is in perfect accord with Gaussian curves inside the circumference of the cylindrical Ge crystal, however, they deviate from the curves outside the circumference. (2) The width parameters of the Gaussian function fitted to the efficiency distributions have a systematic relationship with γ-ray energy. (3) The mapping method is of practical use and has satisfactory accuracy

  7. On-demand semiconductor source of 780-nm single photons with controlled temporal wave packets

    Béguin, Lucas; Jahn, Jan-Philipp; Wolters, Janik; Reindl, Marcus; Huo, Yongheng; Trotta, Rinaldo; Rastelli, Armando; Ding, Fei; Schmidt, Oliver G.; Treutlein, Philipp; Warburton, Richard J.

    2018-05-01

    We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at 780 nm are generated on demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multiphoton emission probability [g2(0 ) ˜0.10 -0.15 ] at a generation rate up to 10 MHz. We observe Raman photons with linewidths as low as 200 MHz, which is narrow compared to the 1.1-GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.

  8. Semiconductor thin films directly from minerals—study of structural, optical, and transport characteristics of Cu2O thin films from malachite mineral and synthetic CuO

    Balasubramaniam, K.R.; Kao, V.M.; Ravichandran, J.; Rossen, P.B.; Siemons, W.; Ager, J.W.

    2012-01-01

    We demonstrate the proof-of-concept of using an abundantly occurring natural ore, malachite (Cu 2 CO 3 (OH) 2 ) to directly yield the semiconductor Cu 2 O to be used as an active component of a functional thin film based device. Cu 2 O is an archetype hole-conducting semiconductor that possesses several interesting characteristics particularly useful for solar cell applications, including low cost, non-toxicity, good hole mobility, large minority carrier diffusion length, and a direct energy gap ideal for efficient absorption. In this article, we compare the structural, optical, and electrical transport characteristics of Cu 2 O thin films grown from the natural mineral malachite and synthetic CuO targets. Growth from either source material results in single-phase, fully epitaxial cuprous oxide thin films as determined by x-ray diffraction. The films grown from malachite have strong absorption coefficients ( 10 4 cm −1 ), a direct allowed optical bandgap ( 2.4 eV), and majority carrier hole mobilities ( 35 cm 2 V −1 s −1 at room temperature) that compare well with films grown from the synthetic target as well as with previously reported values. Our work demonstrates that minerals could be useful to directly yield the active components in functional devices and suggests a route for the exploration of low cost energy conversion and storage technologies. - Highlights: ► Semiconductor thin films directly from minerals ► Chemistry and structure evolution of the films obtained from mineral target is very similar to that films obtained from high-purity synthetic targets. ► Quite interestingly, transport and optical characteristics are also found to be similar.

  9. Optical observations of binary X-ray sources

    Boynton, P.E.

    1975-01-01

    The contribution to the recent progress in astronomy made by optical observations is pointed out. The optical properties of X-ray sources help to establish the physical nature of these objects. The current observational evidence on the binary X-ray sources HZ Her/Her X-1 and HDE 226868/Cyg X-1 is reported. (P.J.S.)

  10. Optical memory

    Mao, Samuel S; Zhang, Yanfeng

    2013-07-02

    Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

  11. FY1995 ultra-high performance semiconductor lasers for advanced optical information network; 1995 nendo kodo hikari joho tsushinmo e muketa kyokugen seino handotai laser

    NONE

    1997-03-01

    The purpose of this research was to study and develop ultra-high performance semiconductor light source devices that should facilitate construction of advanced optical information networks. The semiconductor devices mentioned above are enhanced and integrated versions of distributed feedback (DFB) lasers based on 'gain coupling', which the group of the research coordinator has been investigating as a pioneer in the world. This research aimed at development of ultra-high performance semiconductor lasers that surpass the first generation conventional DFB lasers in any respect, by strengthening important device characteristics for system applications of the gain-coupled DFB lasers. The achievements of this research are listed below : 1. In-situ characterization of As-P exchange in MOVPE 2. Development of 1.55 {mu}m gain-coupled DFB lasers of absorptive grating type 3. Establishment of measurement technique for gain-coupling coefficients 4. Enlargement of small signal modulation response by the absorptive grating 5. Prediction of lower analog modulation distortion 6. Characterization of reflection-induced noise 7. Proposal and Demonstration of wavelength trimming 8. Proposal and Fabrication of GC DFB laser triode (NEDO)

  12. Attenuation of an optical wave propagating in a waveguide, formed by layers of a semiconductor heterostructure, owing to scattering on inhomogeneities

    Bogatov, Alexandr P; Burmistrov, I S

    1999-01-01

    The scattering of an optical wave, propagating in a waveguide made up of layers of a semiconductor heterostructure, is analysed. The attenuation coefficient of the wave is found both for quasi-homogeneous single-crystal layers of a semiconductor solid solution and for layers containing quantum dots. (active media)

  13. Stability of period-one (P1) oscillations generated by semiconductor lasers subject to optical injection or optical feedback.

    Lin, Lyu-Chih; Liu, Ssu-Hsin; Lin, Fan-Yi

    2017-10-16

    We study the stability of period-one (P1) oscillations experimentally generated by semiconductor lasers subject to optical injection (OI) and by those subject to optical feedback (OF). With unique advantages of broad frequency tuning range and large sideband rejection ratio, P1 oscillations can be useful in applications such as photonic microwave generation, radio-over-fiber communication, and laser Doppler velocimeter. The stability of the P1 oscillations is critical for these applications, which can be affected by spontaneous emission and fluctuations in both temperature and injection current. Although linewidths of P1 oscillations generated by various schemes have been reported, the mechanisms and roles which each of the OI and the OF play have however not been investigated in detail. To characterize the stability of the P1 oscillations generated by the OI and the OF schemes, we measure the linewidths and linewidth reduction ratios (LRRs) of the P1 oscillations. The OF scheme has a narrowest linewidth of 0.21 ± 0.03 MHz compared to 4.7 ± 0.6 MHz in the OI scheme. In the OF scheme, a much larger region of LRRs higher than 90% is also found. The superior stability of the OF scheme is benefited by the fact that the P1 oscillations in the OF scheme are originated from the undamped relaxation oscillation of a single laser and can be phase-locked to one of its external cavity modes, whereas those in the OI scheme come from two independent lasers which bear no phase relation. Moreover, excess P1 linewidth broadening in the OI scheme caused by fluctuation in injection parameters associated with frequency jitter and relative intensity noise (RIN) is also minimized in the OF scheme.

  14. Ultrafast supercontinuum fiber-laser based pump-probe scanning magneto-optical Kerr effect microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution.

    Henn, T; Kiessling, T; Ossau, W; Molenkamp, L W; Biermann, K; Santos, P V

    2013-12-01

    We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast "white light" supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

  15. The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.

    Xiao, Z; Camino, F E

    2009-04-01

    Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

  16. Method of making a self-aligned schottky metal semi-conductor field effect transistor with buried source and drain

    Bol, I.

    1984-01-01

    A semi-conductor structure and particularly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source and drain areas thereby providing effective vertical separation of the channel from the buried source and drain respectively. Accordingly, spatial separations between the self-aligned gate-to-drain, and gate-to-source can be relatively very closely controlled by varying the doping intensity and duration of the implantation thereby reducing the series resistance and increasing the operating speed

  17. Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy

    Acbas, G.; Kim, M. -H.; Cukr, M.; Novak, V.; Scarpulla, M. A.; Dubon, O. D.; Jungwirth, T.; Sinova, Jairo; Cerne, J.

    2009-01-01

    We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. The infrared magneto-optical effects we study arise directly from the spin-splitting of the carrier ...

  18. Time-resolved optically-detected magnetic resonance of II-VI diluted-magnetic-semiconductor heterostructures

    Ivanov, V.Yu.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Godlewski, M. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Dept. Mathem. and Natural Sci. College of Sci., Card. S. Wyszynski Univ., Warsaw (Poland); Yakovlev, D.R. [Experimental Physics 2, University of Dortmund, 44221 Dortmund (Germany); A. F. Ioffe Physico-Technical Institute, 194017 St. Petersburg (Russian Federation); Ryabchenko, S.M. [Institute of Physics NAS Ukraine, 03028 Kiev (Ukraine); Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, 38106 Braunschweig (Germany)

    2007-01-15

    Time-resolved optically-detected magnetic resonance (ODMR) technique was used to study spin dynamics of Mn{sup 2+} ions in (Zn,Mn)Se- and (Cd,Mn)Te-based diluted magnetic semiconductor quantum wells. Times of spin-lattice relaxation have been measured directly from a dynamical shift of exciton luminescence lines after a pulsed impact of 60 GHz microwave radiation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch.

    Ermakov, I V; Tronciu, V Z; Colet, Pere; Mirasso, Claudio R

    2009-05-25

    We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

  20. Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch

    Ermakov, Ilya; Tronciu, Vasile; Colet, Pere; Mirasso, Claudio R.

    2009-01-01

    We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

  1. Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

    Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.; Garcia-Ojalvo, J.; Rosso, O. A.

    2010-01-01

    Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensity dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.

  2. New Organic Semiconductor Materials Applied in Organic Photovoltaic and Optical Devices

    Andre F. S. Guedes

    2015-04-01

    Full Text Available The development of flexible organic photovoltaic solar cells, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The flexible organic photovoltaic solar cells are the base Poly (3,4-ethylenedioxythiophene, PEDOT, Poly(3-hexyl thiophene, P3HT, Phenyl-C61-butyric acid methyl ester, PCBM and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by Electrical Measurements and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by electrical Measurements has demonstrated that the PET/ITO/PEDOT/P3HT:PCBM Blend/PANI-X1 layer presents the characteristic curve of standard solar cell after spin-coating and electrodeposition. The Thin film obtained by electrodeposition of PANI-X1 on P3HT/PCBM Blend was prepared in perchloric acid solution. These flexible organic photovoltaic solar cells presented power conversion efficiency of 12%. The inclusion of the PANI-X1 layer reduced the effects of degradation these organic photovoltaic panels induced for solar irradiation. In Scanning Electron Microscopy (SEM these studies reveal that the surface of PANI-X1 layers is strongly conditioned by the surface morphology of the dielectric.

  3. An optical system for controlling ion source parameters

    Zhang Baifang; Liu Zhenhao; Jiang Yi; Xu Zhengjia

    1999-01-01

    An optical control system used for adjusting the source's parameters of an ion separator is described. There are two slice microcomputers at HV terminal and the ground respectively. These microcomputers communicate each other with the full-duplex mode through two pieces of optical fiber, in which many parameters are time-share transmitted in the form of optical pulse. This system can stabilize the arc current and temperature, adjust and display all parameters and has safe-guard ability. At HV terminal, the optical coupling technique is used for connecting the CPU and the ion source, and at the ground the CPU can communicate with a control microcomputer

  4. All-optical 1st- and 2nd-order differential equation solvers with large tuning ranges using Fabry-Pérot semiconductor optical amplifiers.

    Chen, Kaisheng; Hou, Jie; Huang, Zhuyang; Cao, Tong; Zhang, Jihua; Yu, Yuan; Zhang, Xinliang

    2015-02-09

    We experimentally demonstrate an all-optical temporal computation scheme for solving 1st- and 2nd-order linear ordinary differential equations (ODEs) with tunable constant coefficients by using Fabry-Pérot semiconductor optical amplifiers (FP-SOAs). By changing the injection currents of FP-SOAs, the constant coefficients of the differential equations are practically tuned. A quite large constant coefficient tunable range from 0.0026/ps to 0.085/ps is achieved for the 1st-order differential equation. Moreover, the constant coefficient p of the 2nd-order ODE solver can be continuously tuned from 0.0216/ps to 0.158/ps, correspondingly with the constant coefficient q varying from 0.0000494/ps(2) to 0.006205/ps(2). Additionally, a theoretical model that combining the carrier density rate equation of the semiconductor optical amplifier (SOA) with the transfer function of the Fabry-Pérot (FP) cavity is exploited to analyze the solving processes. For both 1st- and 2nd-order solvers, excellent agreements between the numerical simulations and the experimental results are obtained. The FP-SOAs based all-optical differential-equation solvers can be easily integrated with other optical components based on InP/InGaAsP materials, such as laser, modulator, photodetector and waveguide, which can motivate the realization of the complicated optical computing on a single integrated chip.

  5. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Weber, Carsten

    2008-07-01

    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  6. Optical laser systems at the Linac Coherent Light Source

    Minitti, Michael P.; Robinson, Joseph S.; Coffee, Ryan N.; Edstrom, Steve; Gilevich, Sasha; Glownia, James M.; Granados, Eduardo; Hering, Philippe; Hoffmann, Matthias C.; Miahnahri, Alan; Milathianaki, Despina; Polzin, Wayne; Ratner, Daniel; Tavella, Franz; Vetter, Sharon; Welch, Marc; White, William E.; Fry, Alan R., E-mail: alanfry@slac.stanford.edu [Linac Coherent Light Source, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States)

    2015-04-22

    This manuscript serves as a reference to describe the optical laser sources and capabilities at the Linac Coherent Light Source. Ultrafast optical lasers play an essential role in exploiting the unique capabilities of recently commissioned X-ray free-electron laser facilities such as the Linac Coherent Light Source (LCLS). Pump–probe experimental techniques reveal ultrafast dynamics in atomic and molecular processes and reveal new insights in chemistry, biology, material science and high-energy-density physics. This manuscript describes the laser systems and experimental methods that enable cutting-edge optical laser/X-ray pump–probe experiments to be performed at LCLS.

  7. THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK

    Remzi YILDIRIM

    1998-01-01

    Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

  8. Open-Source 3D-Printable Optics Equipment

    Zhang, Chenlong; Anzalone, Nicholas C.; Faria, Rodrigo P.; Pearce, Joshua M.

    2013-01-01

    Just as the power of the open-source design paradigm has driven down the cost of software to the point that it is accessible to most people, the rise of open-source hardware is poised to drive down the cost of doing experimental science to expand access to everyone. To assist in this aim, this paper introduces a library of open-source 3-D-printable optics components. This library operates as a flexible, low-cost public-domain tool set for developing both research and teaching optics hardware. First, the use of parametric open-source designs using an open-source computer aided design package is described to customize the optics hardware for any application. Second, details are provided on the use of open-source 3-D printers (additive layer manufacturing) to fabricate the primary mechanical components, which are then combined to construct complex optics-related devices. Third, the use of the open-source electronics prototyping platform are illustrated as control for optical experimental apparatuses. This study demonstrates an open-source optical library, which significantly reduces the costs associated with much optical equipment, while also enabling relatively easily adapted customizable designs. The cost reductions in general are over 97%, with some components representing only 1% of the current commercial investment for optical products of similar function. The results of this study make its clear that this method of scientific hardware development enables a much broader audience to participate in optical experimentation both as research and teaching platforms than previous proprietary methods. PMID:23544104

  9. Open-source 3D-printable optics equipment.

    Zhang, Chenlong; Anzalone, Nicholas C; Faria, Rodrigo P; Pearce, Joshua M

    2013-01-01

    Just as the power of the open-source design paradigm has driven down the cost of software to the point that it is accessible to most people, the rise of open-source hardware is poised to drive down the cost of doing experimental science to expand access to everyone. To assist in this aim, this paper introduces a library of open-source 3-D-printable optics components. This library operates as a flexible, low-cost public-domain tool set for developing both research and teaching optics hardware. First, the use of parametric open-source designs using an open-source computer aided design package is described to customize the optics hardware for any application. Second, details are provided on the use of open-source 3-D printers (additive layer manufacturing) to fabricate the primary mechanical components, which are then combined to construct complex optics-related devices. Third, the use of the open-source electronics prototyping platform are illustrated as control for optical experimental apparatuses. This study demonstrates an open-source optical library, which significantly reduces the costs associated with much optical equipment, while also enabling relatively easily adapted customizable designs. The cost reductions in general are over 97%, with some components representing only 1% of the current commercial investment for optical products of similar function. The results of this study make its clear that this method of scientific hardware development enables a much broader audience to participate in optical experimentation both as research and teaching platforms than previous proprietary methods.

  10. Open-source 3D-printable optics equipment.

    Chenlong Zhang

    Full Text Available Just as the power of the open-source design paradigm has driven down the cost of software to the point that it is accessible to most people, the rise of open-source hardware is poised to drive down the cost of doing experimental science to expand access to everyone. To assist in this aim, this paper introduces a library of open-source 3-D-printable optics components. This library operates as a flexible, low-cost public-domain tool set for developing both research and teaching optics hardware. First, the use of parametric open-source designs using an open-source computer aided design package is described to customize the optics hardware for any application. Second, details are provided on the use of open-source 3-D printers (additive layer manufacturing to fabricate the primary mechanical components, which are then combined to construct complex optics-related devices. Third, the use of the open-source electronics prototyping platform are illustrated as control for optical experimental apparatuses. This study demonstrates an open-source optical library, which significantly reduces the costs associated with much optical equipment, while also enabling relatively easily adapted customizable designs. The cost reductions in general are over 97%, with some components representing only 1% of the current commercial investment for optical products of similar function. The results of this study make its clear that this method of scientific hardware development enables a much broader audience to participate in optical experimentation both as research and teaching platforms than previous proprietary methods.

  11. Limit of detection of a fiber optics gyroscope using a super luminescent radiation source

    Sandoval R, G.E.; Nikolaev, V.A.

    2003-01-01

    The main objective of this work is to establish the dependence of characteristics of the fiber optics gyroscope (FOG) with respect to the parameters of the super luminescent emission source based on doped optical fiber with rare earth elements (Super luminescent Fiber Source, SFS), argument the pumping rate election of the SFS to obtain characteristics limits of the FOG sensibility. By using this type of emission source in the FOG is recommend to use the rate when the direction of the pumping signal coincide with the super luminescent signal. The most results are the proposition and argumentation of the SFS election as emission source to be use in the FOG of the phase type. Such a decision allow to increase the characteristics of the FOG sensibility in comparison with the use of luminescent source of semiconductors emission which are extensively used in the present time. The use of emission source of the SFS type allow to come closer to the threshold of the obtained sensibility limit (detection limit) which is determined with the shot noise. (Author)

  12. Limit of detection of a fiber optics gyroscope using a super luminescent radiation source

    Sandoval, G E

    2003-01-01

    The main objective of this work is to establish the dependence of characteristics of the fiber optics gyroscope (FOG) with respect to the parameters of the super luminescent emission source based on doped optical fiber with rare earth elements (Super luminescent Fiber Source, SFS), argument the pumping rate election of the SFS to obtain characteristics limits of the FOG sensibility. By using this type of emission source in the FOG is recommend to use the rate when the direction of the pumping signal coincide with the super luminescent signal. The most results are the proposition and argumentation of the SFS election as emission source to be use in the FOG of the phase type. Such a decision allow to increase the characteristics of the FOG sensibility in comparison with the use of luminescent source of semiconductors emission which are extensively used in the present time. The use of emission source of the SFS type allow to come closer to the threshold of the obtained sensibility limit (detection limit) which i...

  13. Nanostructured pyronin Y thin films as a new organic semiconductor: Linear/nonlinear optics, band gap and dielectric properties

    Zahran, H.Y. [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Alamri, F.H. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia)

    2017-05-15

    Pyronin Y dye (PY) is a kind of xanthene derivatives. Thin films of pyronin Y were deposited onto highly cleaned glass substrates using low-cost/spin coating technique. The structure properties of pyronin Y thin films with different thicknesses were investigated by using X-ray diffraction (XRD) and atomic force microscope (AFM). PY thin films for all the studied thicknesses have an amorphous structure supporting the short range order of the grain size. AFM supports the nanostructure with spherical/clusters morphologies of the investigated thin films. The optical constants of pyronin Y thin films for various thicknesses were studied by using UV–vis–NIR spectrophotometer in the wavelength range 350–2500 nm. The transmittance T(λ), reflectance R(λ) spectral and absorbance (abs(λ)) were obtained for all film thicknesses at room temperature and the normal light incident. These films showed a high transmittance in the wide scale wavelengths. For different thicknesses of the studied thin films, the optical band gaps were determined and their values around 2 eV. Real and imaginary dielectric constants, dissipation factor and the nonlinear optical parameters were calculated in the wavelengths to the range 300–2500 nm. The pyronin Y is a new organic semiconductor with a good optical absorption in UV–vis regions and it is suitable for nonlinear optical applications. - Highlights: • Pyronin Y (PY) nanostructured thin films were deposited by using spin coating technique. • XRD/AFM were used to study the structure of PY films. • The optical band gap was calculated on the basis of Tauc's model. • Linear/nonlinear optical parameters are calculated and interpreted via the applied optical theories. • PY thin films is a new organic semiconductor for its application in optoelectronic devices.

  14. Femtosecond optical characterization and applications in cadmium(manganese) telluride diluted magnetic semiconductors

    Wang, Daozhi

    This thesis is devoted to the optical characterization of Cd(Mn)Te single crystals. I present the studies of free-carrier dynamics and generation and detection of coherent acoustic phonons (CAPS) using time-resolved femtosecond pump-probe spectroscopy. The giant Faraday effect and ultrafast responsivity of Cd(Mn)Te to sub-picosecond electromagnetic transients are also demonstrated and discussed in detail. The first, few-picosecond-long electronic process after the initial optical excitation exhibits very distinct characteristic dependence on the excitation condition, and in case of Cd(Mn)Te, it has been attributed to the collective effects of band filling, band renormalization, and two-photon absorption. A closed-form, analytic expression for the differential reflectivity induced by the CAPs is derived based on the propagating-strain-pulse model and it accounts very well for our experimental observations. The accurate values of the Mn concentration and longitudinal sound velocity nu s in Cd(Mn)Te were obtained by fitting the data of the refractive index dependence on the probe wavelength to the Schubert model. In Cd 0.91Mn0.09Te, nus was found to be 3.6x103 m/s. Our comparison studies from the one-color and two-color experiments reveal that the intrinsic phonon lifetime in Cd(Mn)Te was at least on the order of nanoseconds, and the observed exponential damping of the CAP oscillations was due to the finite absorption depth of the probe light. Optically-induced electronic stress has been demonstrated to be the main generation mechanism of CAPs. We also present the giant Faraday effect in the Cd(Mn)Te and the spectra of the Verdet constant, which is mainly due to the exchange interaction between the Mn ions and band electrons. The spectral characteristics of the Verdet constant in Cd(Mn)Te exhibit very unique features compared to that in pure semiconductors. In our time-resolved sampling experiments at the room temperature, the response of the Cd(Mn)Te, particularly

  15. Applied optics

    Orszag, A.; Antonetti, A.

    1988-01-01

    The 1988 progress report, of the Applied Optics laboratory, of the (Polytechnic School, France), is presented. The optical fiber activities are focused on the development of an optical gyrometer, containing a resonance cavity. The following domains are included, in the research program: the infrared laser physics, the laser sources, the semiconductor physics, the multiple-photon ionization and the nonlinear optics. Investigations on the biomedical, the biological and biophysical domains are carried out. The published papers and the congress communications are listed [fr

  16. The optical constants of the organic thin films in the case of xanthats adsorption at the surface of semiconductors minerals

    Todoran, Radu; Todoran, Daniela

    2008-01-01

    The paper present the determinations of some kinetic parameters that characterize the kinetics of the adsorption phenomenon of some organic xanthate molecule on the surface of some natural semiconductor mineral (galena, sphalerite) in order to understand the inward mechanism of this phenomenon. Among the methods of inquiry that allow kinetics determination in situ the optical ones were chosen relying on the change of the liquid-mineral semiconductor interface, and permitting continuous inquires without disturbing the inward development of the processes. Into the computation, we took into the consideration the physical values which feature the roughness of the solid surface, the diffusion into liquid media and the energetic non-homogeneities of the surface. The R s /R p =f(θ) characteristic helps us to establish the thickness of the adsorbed layer, as well as to determine the optical parameters of the thin film. the experimental results allow us to get some information on the mineral and mineral-solution of xanthate, as well allow us to get some information on the parameters which, in correlation with other proportions experimentally determined - could had as to estimations of the dynamic of the surface of a semiconductor solid body. (Author)

  17. High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

    Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.

    1994-01-01

    Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

  18. Magneto-optical and cyclotron resonance studies of semiconductors and their nanostructures in pulsed high magnetic fields

    Miura, N.

    1999-01-01

    Full text: We present a review on the recent advances in physics of magneto-optical spectroscopy in the visible range and of infrared cyclotron resonance in pulsed high magnetic fields, which are produced by electromagnetic flux compression up to 500T, by the single-turn coil technique up to 200T or by conventional non-destructive long pulse magnets up to 50T. We discuss the recent results on the spectroscopy of low dimensional excitons in quantum wells and short period superlattices. In very high fields up to 500T, we observed anomalous field dependence of the exciton absorption lines and the 2D - 3D cross-over effects in GaAs/AlAs quantum wells. In GaP/AlP short period superlattices, it was found that the exciton photoluminescence intensity shows a dramatic decrease and the diamagnetic shift was negative when high magnetic fields were applied parallel to the growth direction. We observed also remarkable effects of uniaxial stress, which are ascribed to the cross-over effect between the two inequivalent valleys at the X points. Cyclotron resonance was measured by using various molecular gas lasers as radiation sources in the range 5 - 119 m . We present the results of cyclotron resonance in GaAs/AlGaAs quantum wells with tilted magnetic fields from the growth direction. It was found that the resonant field and the peak intensity show many different features depending on the extent of the Landau level-subband coupling and on the relation between the photon energy and the barrier height. A large hysteresis was observed between the rising and the falling sweeps of the magnetic field, when the cyclotron resonance energy became comparable with the subband spacing. In a diluted magnetic semiconductor CdFeS, we observed anomalous temperature dependence of the effective mass, suggestive of the magnetic polaron effect

  19. Storage of optical excitations in colloidal semiconductor nanocrystals; Speicherung optischer Anregungen in kolloidalen Halbleiter-Nanokristallen

    Kraus, Robert

    2009-07-22

    In the present theis it is described, how colloidal semiconductor nanocrystals can be used under influence of an electric field to store optical excitation energy at room temperature, to alter, and to supply controlledly. For this the photoluminescence emission of an ensemble of heterogeneous nanocrystals was manipulated and spectroscopically studied. The applied od-shaped particles consist of a spherical core of CdSe, on which an elongated shell of CdS is monocrystallinely be grown. The electron is in such an asymmetric geometry delocalized over the hole nanorod, whereas the hole because of the high potential barrier remains bound in the CdSe core. The wave-function overlap of the charge carriers can therefore be influenced both by the length of the nanorod and by an external electric field. In the regime of prompt fluorescence the manipulation of the charge-carrier separation by an electric field led to a suppression of the radiative recombination. As consequence a fluorescence suppression of about 40% could be observed. After the removal of the electric field the separation was reduced and the stored energy is in an fluorescence increasement directedly liberated again. The strength of the storage efficiency lies with the strength of the electric field in a linear connection. Furthermore in this time range a quantum-confined Stark effect of upt o 14 meV could be detected at room temperature, although the effect is complicated by the different orientations and sizes of the nanorods in the ensemble. Hereby it is of advance to can adress with the applied detection technique a subensemble of nanocrystals. Furthermore a significant storage of the ensmble emission by up to 100 {mu}s conditioned by the electric electric fieldcould be demonstrated, which exceeds the fluorescence lifetime of these particles by the 10{sup 5} fold. As also could be shown by experiments on CdSe/ZnS nanocrystals surface states play a relevent role for the emission dynamics of nanocrystals

  20. Optical and Temporal Carrier Dynamics Investigations of III-Nitrides for Semiconductor Lighting

    Ajia, Idris A.

    2018-05-22

    III-nitride semiconductors suffer significant efficiency limitations; ‘efficiency’ being an umbrella term that covers an extensive list of challenges that must be overcome if they are to fulfil their vast potential. To this end, it is imperative to understand the underlying phenomena behind such limitations. In this dissertation, I combine powerful optical and structural characterization techniques to investigate the effect of different defects on the carrier dynamics in III-nitride materials for light emitting devices. The results presented herein will enhance the current understanding of the carrier mechanisms in such devices, which will lead to device efficiency improvements. In the first part of this dissertation, the effects of some important types of crystal defects present in III-nitride structures are investigated. Here, two types of defects are studied in two different III-nitride-based light emitting structures. The first defects of interest are V-pit defects in InGaN/GaN multiple quantum well (MQW) blue LEDs, where their contribution to the high-efficiency of such LEDs is discussed. In addition, the effect of these defects on the efficiency droop phenomenon in these LEDs is elucidated. Secondly, the optical effects of grain boundary defects in AlN-rich AlGaN/AlGaN MQWs is studied. In this study, it is shown that grain boundary defects may result in abnormal carrier localization behavior in these deep ultraviolet (UV) structures. While both defects are treated individually, it is evident from these studies that threading dislocation (TD) defects are an underlying contributor to the more undesirable outcomes of the said defects. In the second part, the dissertation reports on the carrier dynamics of III-nitride LED structures grown on emerging substrates—as possible efficiency enhancing techniques—aimed at mitigating the effects of TD defects. Thus, the carrier dynamics of GaN/AlGaN UV MQWs grown, for the first time, on (2̅01) – oriented β-Ga2O

  1. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  2. Phonon scattering inhibits simultaneous near-unity efficiency and indistinguishability in semiconductor single-photon sources

    Iles-Smith, Jake; McCutcheon, Dara P. S.; Nazir, Ahsan

    2017-01-01

    in these systems in giving rise to trade-offs between indistinguishability and efficiency. We analyse the two source architectures most commonly employed: a QD embedded in a waveguide and a QD coupled to an optical cavity. For waveguides, we demonstrate that the broadband Purcell effect results in a simple inverse...... relationship, in which indistinguishability and efficiency cannot be simultaneously increased. For cavities, the frequency selectivity of the Purcell enhancement results in a more subtle trade-off, in which indistinguishability and efficiency can be increased simultaneously, although not arbitrarily, which...

  3. Thermal and Optical Modulation of the Carrier Mobility in OTFTs Based on an Azo-anthracene Liquid Crystal Organic Semiconductor.

    Chen, Yantong; Li, Chao; Xu, Xiuru; Liu, Ming; He, Yaowu; Murtaza, Imran; Zhang, Dongwei; Yao, Chao; Wang, Yongfeng; Meng, Hong

    2017-03-01

    One of the most striking features of organic semiconductors compared with their corresponding inorganic counterparts is their molecular diversity. The major challenge in organic semiconductor material technology is creating molecular structural motifs to develop multifunctional materials in order to achieve the desired functionalities yet to optimize the specific device performance. Azo-compounds, because of their special photoresponsive property, have attracted extensive interest in photonic and optoelectronic applications; if incorporated wisely in the organic semiconductor groups, they can be innovatively utilized in advanced smart electronic applications, where thermal and photo modulation is applied to tune the electronic properties. On the basis of this aspiration, a novel azo-functionalized liquid crystal semiconductor material, (E)-1-(4-(anthracen-2-yl)phenyl)-2-(4-(decyloxy)phenyl)diazene (APDPD), is designed and synthesized for application in organic thin-film transistors (OTFTs). The UV-vis spectra of APDPD exhibit reversible photoisomerizaton upon photoexcitation, and the thin films of APDPD show a long-range orientational order based on its liquid crystal phase. The performance of OTFTs based on this material as well as the effects of thermal treatment and UV-irradiation on mobility are investigated. The molecular structure, stability of the material, and morphology of the thin films are characterized by thermal gravimetric analysis (TGA), polarizing optical microscopy (POM), (differential scanning calorimetry (DSC), UV-vis spectroscopy, atomic force microscopy (AFM), and scanning tunneling microscopy (STM). This study reveals that our new material has the potential to be applied in optical sensors, memories, logic circuits, and functional switches.

  4. Electronic and optical properties of defect CdIn_2Te_4 chalcopyrite semiconductor: A first principle approach

    Mishra, S.; Ganguli, B.

    2016-01-01

    We present detailed study of structural, electronic and optical properties of CdIn_2Te_4 compound. The calculations are carried out using Density Functional theory based Tight Binding Linear Muffin Tin Orbital method. The compound is found to be direct band gap semiconductor with a band gap of 1.03 eV. The band gap is within the limit of LDA underestimation. The calculated structural parameters agree well with the available experimental values. We find a decrements of 9.6% in band gap and significant effects on overall electronic and optical properties due to structural distortions. These effects on optical properties come mainly from the change in transition probability. An-isotropic nature of optical properties get enhanced due to structural distortion. The Calculated real & imaginary parts of dielectric constant and static dielectric constant agree well with the available experimental result. - Highlights: • We present ab-initio calculations of electronic & optical properties of CdIn_2Te_4. • Band gap get reduced by 9.6% due to structural distortion. • Structural distortion has significant effects on optical properties. • Anisotropic nature of optical response functions get enhanced by structural distortion. • Calculated dielectric constant agrees with experimental value.

  5. Semiconductor Electrical Measurements Laboratory

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  6. Optical Imaging of Ionizing Radiation from Clinical Sources.

    Shaffer, Travis M; Drain, Charles Michael; Grimm, Jan

    2016-11-01

    Nuclear medicine uses ionizing radiation for both in vivo diagnosis and therapy. Ionizing radiation comes from a variety of sources, including x-rays, beam therapy, brachytherapy, and various injected radionuclides. Although PET and SPECT remain clinical mainstays, optical readouts of ionizing radiation offer numerous benefits and complement these standard techniques. Furthermore, for ionizing radiation sources that cannot be imaged using these standard techniques, optical imaging offers a unique imaging alternative. This article reviews optical imaging of both radionuclide- and beam-based ionizing radiation from high-energy photons and charged particles through mechanisms including radioluminescence, Cerenkov luminescence, and scintillation. Therapeutically, these visible photons have been combined with photodynamic therapeutic agents preclinically for increasing therapeutic response at depths difficult to reach with external light sources. Last, new microscopy methods that allow single-cell optical imaging of radionuclides are reviewed. © 2016 by the Society of Nuclear Medicine and Molecular Imaging, Inc.

  7. Nonlinear optical diagnostic of semimagnetic semiconductors Pb1-xYb xX (X = S, Se, Te)

    Nouneh, K.; Kityk, I.V.; Viennois, R.; Benet, S.; Charar, S.; Plucinski, K.J.

    2007-01-01

    Nonlinear optical measurements were performed to elucidate the influence of magnetic ions on the behavior of charge carriers in magnetic semiconductors-Pb 1-x Yb x X (X = S, Se, Te at x = 1-3%). It was shown that nonlinear optical methods could be used as sensitive tools for investigations of electron-phonon anharmonicity near low-temperature semiconductor-insulator phase transitions. There exists a difference between surface and bulk-like contributions to the nonlinear optical effects. It was shown that only low-temperature Two Photon Absorption (TPA) oscillator may be related to the number of the electron-phonon anharmonic modes responsible for the observed phase transformation. The explanation of the anomalous temperature dependences is given in accordance with dipole momentum's behaviors determined by low-temperature spin-spin interactions and by electron-phonon anharmonic interactions. We have discovered that low-temperature dependence of specific heat of Pb 1-x R x Te (R = Yb, Pr with x = 3% and 1.6%, respectively) exhibits a non-magnetic order caused by large electron-phonon contributions and structural disorder effects

  8. Sequential x-ray diffraction topography at 1-BM x-ray optics testing beamline at the advanced photon source

    Stoupin, Stanislav, E-mail: sstoupin@aps.anl.gov; Shvyd’ko, Yuri; Trakhtenberg, Emil; Liu, Zunping; Lang, Keenan; Huang, Xianrong; Wieczorek, Michael; Kasman, Elina; Hammonds, John; Macrander, Albert; Assoufid, Lahsen [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2016-07-27

    We report progress on implementation and commissioning of sequential X-ray diffraction topography at 1-BM Optics Testing Beamline of the Advanced Photon Source to accommodate growing needs of strain characterization in diffractive crystal optics and other semiconductor single crystals. The setup enables evaluation of strain in single crystals in the nearly-nondispersive double-crystal geometry. Si asymmetric collimator crystals of different crystallographic orientations were designed, fabricated and characterized using in-house capabilities. Imaging the exit beam using digital area detectors permits rapid sequential acquisition of X-ray topographs at different angular positions on the rocking curve of a crystal under investigation. Results on sensitivity and spatial resolution are reported based on experiments with high-quality Si and diamond crystals. The new setup complements laboratory-based X-ray topography capabilities of the Optics group at the Advanced Photon Source.

  9. Dual Optical Comb LWIR Source and Sensor

    2017-10-12

    Justin M. Brown, Mark G. Allen Physical Sciences Inc. (PSI) Pierre Jouy, Jérôme Faist Swiss Federal Institute of Technology (ETH) Markus Geiser...Research, Development & Engineering Center Name of Contractor: Physical Sciences Inc. Principal Investigator: Dr. Joel M. Hensley Business...including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and

  10. Optical identifications of flat-spectrum radio sources

    Condon, J.J.; Condon, M.A.; Broderick, J.J.; Davis, M.M.

    1983-01-01

    A complete sample of radio sources with S> or =0.3 Jy at 1400 MHz, +24 0 0 , and low-frequency spectral indices α(408, 1400) or =+0.5 are usually in empty fields. The lower limits that can be assigned to the radio-optical spectral indices α/sub RO/ of these sources are significantly higher than the median α/sub RO/ of the sources with flat high-frequency spectra, so the optical characteristics of the two classes of radio source are intrinsically different. The radio and optical fluxes of flat-spectrum QSO's appear to be correlated, at least when averaged over 10 2 --10 3 yr

  11. Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

    Shpotyuk, Oleh; Filipecki, Jacek; Shpotyuk, Mykhaylo

    2013-01-01

    Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As 2 S 3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As 4 + ; S 1 - ) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As 2 S 3 is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Optical Characteristics of a Multichannel Hybrid Integrated Light Source for Ultra-High-Bandwidth Optical Interconnections

    Takanori Shimizu

    2015-11-01

    Full Text Available The optical characteristics of a multi-channel hybrid integrated light source were described for an optical interconnection with a bandwidth of over 10 Tbit/s. The power uniformity of the relative intensity of a 1000-channel light source was shown, and the minimum standard deviation s of the optical power of the 200 output ports at each 25-channel laser diode (LD array was estimated to be 0.49 dB. This hybrid integrated light source is expected to be easily adaptable to a photonics-electronics convergence system for ultra-high-bandwidth interchip interconnections.

  13. Multistate intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity.

    Choi, Daeyoung; Wishon, Michael J; Chang, C Y; Citrin, D S; Locquet, A

    2018-01-01

    We observe experimentally two regimes of intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity as the feedback level is increased. The first regime encountered corresponds to multistate intermittency involving two or three states composed of several combinations of periodic, quasiperiodic, and subharmonic dynamics. The second regime is observed for larger feedback levels and involves intermittency between period-doubled and chaotic regimes. This latter type of intermittency displays statistical properties similar to those of on-off intermittency.

  14. Multicanonical evaluation of the tails of the probability density function of semiconductor optical amplifier output power fluctuations

    Tromborg, Bjarne; Reimer, Michael; Yevick, David

    2010-01-01

    This paper presents a multicanonical Monte Carlo method for simulating the tails of a pdf distribution of the filtered output power from a semiconductor optical amplifier down to values of the order of 10−40. The influence of memory effects on the pdf is examined in order to demonstrate the manner...... in which the calculated pdf approaches the true pdf with increasing integration time. The simulated pdf is shown to be in good agreement with a second order analytic expression for the pdf....

  15. Optically Detected Magnetic Resonance Studies on π-conjugated semiconductor systems

    Chen, Ying [Iowa State Univ., Ames, IA (United States)

    2011-01-01

    Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in π-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at ΔmS=±1 and ΔmS=±2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal

  16. Radiation induced changes of optical, electrical and mechanical properties of glasses, dielectrics and semiconductors

    Adawi, M.A.

    2006-01-01

    This work is concerned with investigating the influence of ionizing radiation on different materials. Concretely, the change of their physical characteristics such as, the electrical resistivity, the optical density, the thermoluminescence spectra, the microhardness etc. The investigated materials are: polyethylene, glasses containing U 3 O 8 , Na 2 O and K 2 O, polyvinyl alcohol containing Ni 2 SO 4 , CoCl 2 , CuSO 4 and Cu (CH 3 COO) 2 , polymer Pb 2 O 3 /composite, germanium sulphur alloy, synthetic and natural diamond, nickel chromium steel and silicon. Irradiation is carried out in neutron fields of 10 5 -10 14 neutron/cm 2 , gamma radiation in the dose range 10 2 -10 6 Gy. and swift heavy ions of energy 1 MeV/amu fluence range 10 8 -10 16 ion/cm 2 . The possibility of working out dosimetric devices (using the above mentioned materials) possessing accurate and well expressed metrical characteristics for detecting different sorts of radiation is investigated. The optimum conditions of using these dosimeters (under different thermodynamic conditions and absolute values of registered radiation) are determined. The process of defect formation and evolution in silicon single crystal and diamond irradiated with swift heavy ions is studied. The influence of high-energy heavy ions on the surface structure of nickel chromium steel is investigated. The formation of thermally stable conducting layers at the far depth of the boron projective range in silicon irradiated with swift boron ions is confirmed. Irradiation of nickel chromium steel with xenon ions lead to the change of the elemental composition of the irradiated surface. For the case of diamond semiconductor single crystal irradiated with high-energy xenon or krypton ions possessing energy 1 MeV/nucleon, the track formation is observed for the first time. The track formation criteria are established. A model characterizing the interaction of high-energy heavy ions with diamond is introduced. Such model is found

  17. Ion optics in an ion source system

    Abdel-Salam, F W; Moustafa, O A; El-Khabeary, H [Accelerators Dept, Nuclear Research Center, Atomic Energy Authority, Cairo (Egypt)

    1997-12-31

    An analysis of ion beams from an ion source which consisted of a hemispherical anode, a plane earthed cathode, and a focusing electrode has been carried out. The focal properties of such electrode arrangement were studied using axially symmetric fields. Axial and radial electric fields were obtained as functions of the axial distance. It was found that the radial component of the gradient of potential pushes the ions towards the axis, which indicates the convergent action of the system. The effect of voltage variation between the boundary and the focusing electrode on the position of the plasma boundary are given using the experimental data of the ion source characteristics and its geometrical parameters. The advantages of plasma diffusing outside the source through a small aperture were used by applying a potential to the focusing electrode. It was possible to extract a large ion current from the expanded plasma. The system constituted a lens with a focal length of 29.4 mm. 7 figs.

  18. Optical/Far-Infrared Control of Low-Dimensional Semiconductor Structures

    Citrin, David

    2003-01-01

    .... The manipulation of the carrier and optical dynamics will be achieved by the use of specially tailored ultrafast optical pulses, multicolor laser fields, millimeter or submillimeter electromagnetic...

  19. Magneto-optical Faraday rotation of semiconductor nanoparticles embedded in dielectric matrices.

    Savchuk, Andriy I; Stolyarchuk, Ihor D; Makoviy, Vitaliy V; Savchuk, Oleksandr A

    2014-04-01

    Faraday rotation has been studied for CdS, CdTe, and CdS:Mn semiconductor nanoparticles synthesized by colloidal chemistry methods. Additionally these materials were prepared in a form of semiconductor nanoparticles embedded in polyvinyl alcohol films. Transmission electron microscopy and atomic force microscopy analyses served as confirmation of nanocrystallinity and estimation of the average size of the nanoparticles. Spectral dependence of the Faraday rotation for the studied nanocrystals and nanocomposites is correlated with a blueshift of the absorption edge due to the confinement effect in zero-dimensional structures. Faraday rotation spectra and their temperature behavior in Mn-doped nanocrystals demonstrates peculiarities, which are associated with s, p-d exchange interaction between Mn²⁺ ions and band carriers in diluted magnetic semiconductor nanostructures.

  20. Optical observations of binary X-ray sources

    Charles, P.

    1982-01-01

    Here I shall consider only those systems where the compact object is a neutron star (or in a few cases perhaps a black hole). Since van Paradijs (1982) has recently produced an excellent and comprehensive review of optical observations of compact galactic X-ray sources I shall summarise the basic properties of the optical counterparts and discuss a few representative systems in some detail. (orig./WL)

  1. Simulated nuclear optical signatures using explosive light sources (ELS)

    Glaser, R.F.

    1979-05-01

    Four Explosive Light Source (aluminium powder and oxygen) tests were conducted on the test range at Sandia Laboratories in Albuquerque (SLA) from 28 February through 7 March 1978. Although several types of measuring devices were used, the report documents only the optical time histories measured by the bhangmeters and the NBDS, and explains the conclusions reached. In general, the four shots made it possible to gather clear-air optical transmission data, determine the suitability of ELS to simulate the optical effects of a nuclear burst, and provide experience for the larger scale ELS tests to be conducted at Fort Ord, CA in April

  2. Subcarrier multiplexing tolerant dispersion transmission system employing optical broadband sources.

    Grassi, Fulvio; Mora, José; Ortega, Beatriz; Capmany, José

    2009-03-16

    This paper presents a novel SCM optical transmission system for next-generation WDM-PONs combining broadband optical sources and a Mach-Zehnder interferometric structure. The approach leeds to transport RF signals up to 50 GHz being compatible with RoF systems since a second configuration has been proposed in order to overcome dispersion carrier suppression effect using DSB modulation. The theoretical analysis validates the potentiality of the system also considering the effects of the dispersion slope over the transmission window. (c) 2009 Optical Society of America

  3. Simulated nuclear optical signatures using explosive light sources (ELS)

    Glaser, R.F.

    1979-05-01

    Four Explosive Light Source (aluminium powder and oxygen) tests were conducted on the test range at Sandia Laboratories in Albuquerque (SLA) from 28 February through 7 March 1978. Although several types of measuring devices were used, the report documents only the optical time histories measured by the bhangmeters and the NBDS, and explains the conclusions reached. In general, the four shots made it possible to gather clear-air optical transmission data, determine the suitability of ELS to simulate the optical effects of a nuclear burst, and provide experience for the larger scale ELS tests to be conducted at Fort Ord, CA in April.

  4. 25 Gbit/s differential phase-shift-keying signal generation using directly modulated quantum-dot semiconductor optical amplifiers

    Zeghuzi, A.; Schmeckebier, H.; Stubenrauch, M.; Bimberg, D.; Meuer, C.; Schubert, C.; Bunge, C.-A.

    2015-01-01

    Error-free generation of 25-Gbit/s differential phase-shift keying (DPSK) signals via direct modulation of InAs quantum-dot (QD) based semiconductor optical amplifiers (SOAs) is experimentally demonstrated with an input power level of −5 dBm. The QD SOAs emit in the 1.3-μm wavelength range and provide a small-signal fiber-to-fiber gain of 8 dB. Furthermore, error-free DPSK modulation is achieved for constant optical input power levels from 3 dBm down to only −11 dBm for a bit rate of 20 Gbit/s. Direct phase modulation of QD SOAs via current changes is thus demonstrated to be much faster than direct gain modulation

  5. Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

    Karni, O., E-mail: oulrik@tx.technion.ac.il; Mikhelashvili, V.; Eisenstein, G. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Kuchar, K. J. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Capua, A. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); IBM Almaden Research Center, San Jose, 95120 California (United States); Sęk, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Ivanov, V.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Kassel D-34132 (Germany)

    2014-03-24

    We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

  6. Handbook of luminescent semiconductor materials

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  7. A dual-optically-pumped polarized negative deuterium ion source

    Kinsho, M.; Mori, Y.; Ikegami, K.; Takagi, A.

    1994-01-01

    An optically pumped polarized H - source (OPPIS), which is based on the charge exchange between H + ions and electron-spin-polarized alkali atoms has been developed at KEK. Just by applying this scheme to a deuteron beam, it is difficult to obtain a highly vector polarized deuteron beam. To obtain highly vector polarized D - ions, we have developed a 'dual optical pumping type' of polarized D - source. With this scheme, a 100% vector nuclear-spin polarization for D - ions is possible in principle. In a preliminary experiment, a 60% of vector nuclear-spin polarized D - ions was obtained. (author)

  8. Optical properties and quantum confinement of nanocrystalline II-IV semiconductor particles

    Dijken, Albert van

    1999-01-01

    In this thesis, experiments are described that were performed on suspensions of nanocrystalline II-IV semiconductor particles.The object of this research is to study quantum size effects in relation to the luminescence properties of these particles. A pre-requisite for performing studies of

  9. Understanding and exploiting optical properties in semiconductor nanowires for solar energy conversion

    Frau, Eleonora; Tutuncuoglu, Gozde; Matteini, Federico

    2016-01-01

    Semiconductor nanowires are promising building blocks for next generation solar energy conversion at low cost, due to their large absorption cross-sections. Here, the understanding of their absorption power is explored via computational and experimental methods as well as its use in other fields...

  10. NONLINEAR OPTICAL PHENOMENA: Self-reflection effect in semiconductors in a two-pulse regime

    Khadzhi, P. I.; Nad'kin, L. Yu

    2004-12-01

    Peculiarities of reflection at the end face of a semi-infinite semiconductor in a two-pulse regime are studied. The reflection functions behave in a complex and ambiguous manner governed by the amplitudes of the fields of incident pulses. The possibility of a complete bleaching of the medium for the field in the M-band is predicted.

  11. Towards quantum optics and entanglement with electron spin ensembles in semiconductors

    van der Wal, Caspar H.; Sladkov, Maksym

    We discuss a technique and a material system that enable the controlled realization of quantum entanglement between spin-wave modes of electron ensembles in two spatially separated pieces of semiconductor material. The approach uses electron ensembles in GaAs quantum wells that are located inside

  12. Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

    Isik, Dilek

    This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

  13. Miniaturized and general purpose fiber optic ultrasonic sources

    Biagi, E.; Fontani, S.; Masotti, L.; Pieraccini, M.

    1997-01-01

    Innovative photoacoustic sources for ultrasonic NDE, smart structure, and clinical diagnosis are proposed. The working principle is based on thermal conversion of laser pulses into a metallic film evaporated directly onto the tip of a fiber optic. Unique features of the proposed transducers are very high miniaturization and potential easy embedding in smart structure. Additional advantages, high bedding in smart structure. Additional advantages, high ultrasonic frequency, large and flat bandwidth. All these characteristics make the proposed device an ideal ultrasonic source

  14. Flexible power 90W to 120W ArF immersion light source for future semiconductor lithography

    Burdt, R.; Thornes, J.; Duffey, T.; Bibby, T.; Rokitski, R.; Mason, E.; Melchior, J.; Aggarwal, T.; Haran, D.; Wang, J.; Rechtsteiner, G.; Haviland, M.; Brown, D.

    2014-03-01

    Semiconductor market demand for improved performance at lower cost continues to drive enhancements in excimer light source technologies. Increased output power, reduced variability in key light source parameters, and improved beam stability are required of the light source to support immersion lithography, multi-patterning, and 450mm wafer applications in high volume semiconductor manufacturing. To support future scanner needs, Cymer conducted a technology demonstration program to evaluate the design elements for a 120W ArFi light source. The program was based on the 90W XLR 600ix platform, and included rapid power switching between 90W and 120W modes to potentially support lot-to-lot changes in desired power. The 120W requirements also included improved beam stability in an exposure window conditionally reduced by 20%. The 120W output power is achieved by efficiency gains in system design, keeping system input power at the same level as the 90W XLR 600ix. To assess system to system variability, detailed system testing was conducted from 90W - 120W with reproducible results.

  15. Compensation of nonlinearity in a fiber-optic transmission system using frequency-degenerate phase conjugation through counter-propagating dual pump FWM in a semiconductor optical amplifier

    Anchal, Abhishek; K, Pradeep Kumar; O'Duill, Sean; Anandarajah, Prince M.; Landais, Pascal

    2018-04-01

    We present a scheme of frequency-degenerate mid-span spectral inversion (MSSI) for nonlinearity compensation in fiber-optic transmission systems. The spectral inversion is obtained by using counter-propagating dual pump four-wave mixing in a semiconductor optical amplifier (SOA). Frequency-degeneracy between signal and conjugate is achieved by keeping two pump frequencies symmetrical about the signal frequency. We simulate the performance of MSSI for nonlinearity compensation by scrutinizing the improvement of the Q-factor of a 200 Gbps QPSK signal transmitted over a standard single mode fiber, as a function of launch power for different span lengths and number of spans. We demonstrate a 7.5 dB improvement in the input power dynamic range and an almost 83% increase in the transmission length for optimum MSSI parameters of -2 dBm pump power and 400 mA SOA current.

  16. Optical self-injection mode-locking of semiconductor optical amplifier fiber ring with electro-absorption modulation—fundamentals and applications

    Chi, Yu-Chieh; Lin, Gong-Ru

    2013-01-01

    The optical self-injection mode-locking of a semiconductor optical amplifier incorporated fiber ring laser (SOAFL) with spectrally sliced multi-channel carriers is demonstrated for applications. The synthesizer-free SOAFL pulse-train is delivered by optical injection mode-locking with a 10 GHz self-pulsed electro-absorption modulator (EAM). Such a coupled optical and electronic resonator architecture facilitates a self-feedback oscillation with a higher Q-factor and lower phase/intensity noises when compared with conventional approaches. The theoretical model of such an injection-mode-locking SOAFL is derived to improve the self-pulsating performance of the optical return-to-zero (RZ) carrier, thus providing optimized pulsewidth, pulse extinction ratio, effective Q-factor, frequency variation and timing jitter of 11.4 ps, 9.1 dB, 4 × 10 5 , −1 bi-directional WDM transmission network with down-stream RZ binary phase-shift keying (RZ-BPSK) and up-stream re-modulated RZ on–off-keying (RZ-OOK) formats. Under BPSK/OOK bi-directional data transmission, the self-pulsed harmonic mode-locking SOAFL simultaneously provides four to six WDM channels for down-stream RZ-BPSK and up-stream RZ-OOK formats with receiving sensitivities of −17 and −15.2 dBm at a bit error rate of 10 −9 , respectively. (paper)

  17. Long axial imaging range using conventional swept source lasers in optical coherence tomography via re-circulation loops

    Bradu, Adrian; Jackson, David A.; Podoleanu, Adrian

    2018-03-01

    Typically, swept source optical coherence tomography (SS-OCT) imaging instruments are capable of a longer axial range than their camera based (CB) counterpart. However, there are still various applications that would take advantage for an extended axial range. In this paper, we propose an interferometer configuration that can be used to extend the axial range of the OCT instruments equipped with conventional swept-source lasers up to a few cm. In this configuration, the two arms of the interferometer are equipped with adjustable optical path length rings. The use of semiconductor optical amplifiers in the two rings allows for compensating optical losses hence, multiple paths depth reflectivity profiles (Ascans) can be combined axially. In this way, extremely long overall axial ranges are possible. The use of the recirculation loops produces an effect equivalent to that of extending the coherence length of the swept source laser. Using this approach, the achievable axial imaging range in SS-OCT can reach values well beyond the limit imposed by the coherence length of the laser, to exceed in principle many centimeters. In the present work, we demonstrate axial ranges exceeding 4 cm using a commercial swept source laser and reaching 6 cm using an "in-house" swept source laser. When used in a conventional set-up alone, both these lasers can provide less than a few mm axial range.

  18. Optical linear algebra processors - Noise and error-source modeling

    Casasent, D.; Ghosh, A.

    1985-01-01

    The modeling of system and component noise and error sources in optical linear algebra processors (OLAPs) are considered, with attention to the frequency-multiplexed OLAP. General expressions are obtained for the output produced as a function of various component errors and noise. A digital simulator for this model is discussed.

  19. Optical linear algebra processors: noise and error-source modeling.

    Casasent, D; Ghosh, A

    1985-06-01

    The modeling of system and component noise and error sources in optical linear algebra processors (OLAP's) are considered, with attention to the frequency-multiplexed OLAP. General expressions are obtained for the output produced as a function of various component errors and noise. A digital simulator for this model is discussed.

  20. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid, E-mail: amsiddiqui@jmi.ac.in [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  1. Semiconductor spintronics

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  2. X-ray Optics for BES Light Source Facilities

    Mills, Dennis [Argonne National Lab. (ANL), Argonne, IL (United States); Padmore, Howard [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lessner, Eliane [Dept. of Energy (DOE), Washington DC (United States). Office of Science

    2013-03-27

    Each new generation of synchrotron radiation sources has delivered an increase in average brightness 2 to 3 orders of magnitude over the previous generation. The next evolution toward diffraction-limited storage rings will deliver another 3 orders of magnitude increase. For ultrafast experiments, free electron lasers (FELs) deliver 10 orders of magnitude higher peak brightness than storage rings. Our ability to utilize these ultrabright sources, however, is limited by our ability to focus, monochromate, and manipulate these beams with X-ray optics. X-ray optics technology unfortunately lags behind source technology and limits our ability to maximally utilize even today’s X-ray sources. With ever more powerful X-ray sources on the horizon, a new generation of X-ray optics must be developed that will allow us to fully utilize these beams of unprecedented brightness. The increasing brightness of X-ray sources will enable a new generation of measurements that could have revolutionary impact across a broad area of science, if optical systems necessary for transporting and analyzing X-rays can be perfected. The high coherent flux will facilitate new science utilizing techniques in imaging, dynamics, and ultrahigh-resolution spectroscopy. For example, zone-plate-based hard X-ray microscopes are presently used to look deeply into materials, but today’s resolution and contrast are restricted by limitations of the current lithography used to manufacture nanodiffractive optics. The large penetration length, combined in principle with very high spatial resolution, is an ideal probe of hierarchically ordered mesoscale materials, if zone-plate focusing systems can be improved. Resonant inelastic X-ray scattering (RIXS) probes a wide range of excitations in materials, from charge-transfer processes to the very soft excitations that cause the collective phenomena in correlated electronic systems. However, although RIXS can probe high-energy excitations, the most exciting and

  3. X-ray Optics for BES Light Source Facilities

    Mills, Dennis; Padmore, Howard; Lessner, Eliane

    2013-01-01

    Each new generation of synchrotron radiation sources has delivered an increase in average brightness 2 to 3 orders of magnitude over the previous generation. The next evolution toward diffraction-limited storage rings will deliver another 3 orders of magnitude increase. For ultrafast experiments, free electron lasers (FELs) deliver 10 orders of magnitude higher peak brightness than storage rings. Our ability to utilize these ultrabright sources, however, is limited by our ability to focus, monochromate, and manipulate these beams with X-ray optics. X-ray optics technology unfortunately lags behind source technology and limits our ability to maximally utilize even today's X-ray sources. With ever more powerful X-ray sources on the horizon, a new generation of X-ray optics must be developed that will allow us to fully utilize these beams of unprecedented brightness. The increasing brightness of X-ray sources will enable a new generation of measurements that could have revolutionary impact across a broad area of science, if optical systems necessary for transporting and analyzing X-rays can be perfected. The high coherent flux will facilitate new science utilizing techniques in imaging, dynamics, and ultrahigh-resolution spectroscopy. For example, zone-plate-based hard X-ray microscopes are presently used to look deeply into materials, but today's resolution and contrast are restricted by limitations of the current lithography used to manufacture nanodiffractive optics. The large penetration length, combined in principle with very high spatial resolution, is an ideal probe of hierarchically ordered mesoscale materials, if zone-plate focusing systems can be improved. Resonant inelastic X-ray scattering (RIXS) probes a wide range of excitations in materials, from charge-transfer processes to the very soft excitations that cause the collective phenomena in correlated electronic systems. However, although RIXS can probe high-energy excitations, the most exciting

  4. Water-Soluble CdTe/CdS Core/Shell Semiconductor Nanocrystals: How Their Optical Properties Depend on the Synthesis Methods

    Brener R. C. Vale

    2016-10-01

    Full Text Available We conducted a comparative synthesis of water-soluble CdTe/CdS colloidal nanocrystalline semiconductors of the core/shell type. We prepared the CdS shell using two different methods: a one-pot approach and successive ionic layer adsorption and reaction (SILAR; in both cases, we used 3-mercaptopropionic acid (MPA as the surface ligand. In the one-pot approach, thiourea was added over the freshly formed CdTe dispersion, and served as the sulfur source. We achieved thicker CdS layers by altering the Cd:S stoichiometric ratio (1:1, 1:2, 1:4, and 1:8. The Cd:S ratios 1:1 and 1:2 furnished the best optical properties; these ratios also made the formation of surface defects less likely. For CdTe/CdS obtained using SILAR, we coated the surface of three differently sized CdTe cores (2.17, 3.10, and 3.45 nm with one to five CdS layers using successive injections of the Cd2+ and S2– ions. The results showed that the core size influenced the optical properties of the materials. The deposition of three to five layers over the surface of smaller CdTe colloidal nanocrystals generated strain effects on the core/shell structure.

  5. FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

    NONE

    1997-03-01

    The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

  6. Demonstration and optimisation of an ultrafast all-optical AND logic gate using four-wave mixing in a semiconductor optical amplifier

    Razaghi, M; Nosratpour, A; Das, N K

    2013-01-01

    We have proposed an all-optical AND logic gate based on four-wave mixing (FWM) in a semiconductor optical amplifier (SOA) integrated with an optical filter. In the scheme proposed, the preferred logical function can be performed without using a continuous-wave (cw) signal. The modified nonlinear Schroedinger equation (MNLSE) is used for the modelling wave propagation in a SOA. The MNLSE takes into account all nonlinear effects relevant to pico- and sub-picosecond pulse durations and is solved by the finite-difference beam-propagation method (FD-BPM). Based on the simulation results, the optimal output signal with a 40-fJ energy can be obtained at a bit rate of 50 Gb s -1 . In the simulations, besides the nonlinearities included in the model, the pattern effect of the signals propagating in the SOA medium and the effect of the input signal bit rate are extensively investigated to optimise the system performance. (optical logic elements)

  7. Electrical conductivity, optical properties and mechanical stability of 3, 4, 9, 10-perylenetetracarboxylic dianhidride based organic semiconductor

    Pandey, Mayank; Joshi, Girish M.; Deshmukh, Kalim; Nath Ghosh, Narendra; Nambi Raj, N. Arunai

    2015-05-01

    The 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) doped polymer films were prepared with Polypyrrole (PPy) and Polyvinyl alcohol (PVA) polymers by solution-casting. The change in structure and chemical composition of samples was identified by XRD and FTIR respectively. The UV-visible spectroscopy demonstrates the optical characteristics and band gap properties of sample. The homogeneous morphology of sample for higher wt% of PTCDA was examined by atomic force microscopy (AFM). The differential scanning calorimetry (DSC) results demonstrate the decrease in melting temperature (Tm) and degree of crystallinity (χc%) of polymeric organic semiconductor. The mechanical property demonstrates the high tensile strength and improved plasticity nature. Impedance spectroscopy was evaluated to determine the conductivity response of polymeric organic semiconductor. The highest DC conductivity (2.08×10-3 S/m) was obtained for 10 wt% of PTCDA at 140 °C. The decrease in activation energy (Ea) represents the non-Debye process and was evaluated from the slope of ln σdc vs. 103/T plot.

  8. Programmable current source for diode lasers stabilized optical fiber

    Gomez, J.; Camas, J.; Garcia, L.

    2012-01-01

    In this paper, we present the electronic design of a programmable stabilized current source. User can access to the source through a password, which, it has a database with the current and voltage operating points. This source was successfully used as current source in laser diode in optical fiber sensors. Variations in the laser current were carried out by a monitoring system and a control of the Direct Current (DC), which flowing through a How land source with amplifier. The laser current can be stabilized with an error percent of ± 1 μA from the threshold current (Ith) to its maximum operation current (Imax) in DC mode. The proposed design is reliable, cheap, and its output signal of stabilized current has high quality. (Author)

  9. Semiconductor nanostructures on silicon. Carrier dynamics, optical amplification and lasing; Halbleiternanostrukturen auf Silizium. Ladungstraegerdynamik, optischer Verstaerker und Laser

    Lange, Christoph

    2008-12-11

    Two material systems that can be grown epitaxially on a silicon substrate are experimentally investigated with respect to their optical properties. Quantum wells (qw) of Germanium were experimentally investigated by spectrally resolved white-light pump-probe-absorption spectroscopy at room temperature. A second material class is Ga(NAsP), which was grown as quantum wells on a silicon substrate matching the lattice constant of the substrate. The basic optical properties were determined using the variable stripe-length method. In order to relate the results to those of established materials, a selection of comparable III/V semiconductors were measured in the same setups. The pump-probe measurements on (GaIn)As quantum wells exhibited a much more rapid scattering. In these material systems, quite similar optical gain values of 10{sup -3}/QW were found with decay times of several 100 ps. For (GaIn)(NAs), slightly higher values were determined. Using the variable stripe-length method, GaSb quantum wells with dot-like morphology were investigated. (orig.)

  10. Few-Photon Model of the Optical Emission of Semiconductor Quantum Dots

    Richter, Marten; Carmele, Alexander; Sitek, Anna; Knorr, Andreas

    2009-08-01

    The Jaynes-Cummings model provides a well established theoretical framework for single electron two level systems in a radiation field. Similar exactly solvable models for semiconductor light emitters such as quantum dots dominated by many particle interactions are not known. We access these systems by a generalized cluster expansion, the photon-probability cluster expansion: a reliable approach for few-photon dynamics in many body electron systems. As a first application, we discuss vacuum Rabi oscillations and show that their amplitude determines the number of electrons in the quantum dot.

  11. Experimental control of power dropouts by current modulation in a semiconductor laser with optical feedback

    Ticos, Catalin M; Andrei, Ionut R; Pascu, Mihail L; Bulinski, Mircea

    2011-01-01

    The injection current of an external-cavity semiconductor laser working in a regime of low-frequency fluctuations (LFFs) is modulated at several MHz. The rate of power dropouts in the laser emission is correlated with the amplitude and frequency of the modulating signal. The occurrence of dropouts becomes more regular when the laser is driven at 7 MHz, which is close to the dominant frequency of dropouts in the solitary laser. Driving the laser at 10 MHz also induces dropouts with a periodicity of 0.1 μs, resulting in LFFs with two dominant frequencies.

  12. Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

    Kim, Jungho; Yu, Bong-Ahn

    2015-01-01

    We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases. (paper)

  13. The TRIUMF optically-pumped polarized H- ion source

    Levy, C.D.P.; Jayamanna, K.; McDonald, M.; Schmor, P.W.; Van Oers, W.T.H.; Welz, J.; Wight, G.W.; Dutto, G.; Zelenski, A.N.; Sakae, T.

    1995-09-01

    The TRIUMF dc optically-pumped polarized H - ion source (OPPIS) produces 200 μA dc H - current at 85% polarization within a normalized emittance (90%) of 0.8 π mm mrad, for operations at the TRIUMF cyclotron. As a result of development of the ECR primary proton source, 1.6 mA dc polarized H - current is produced within a normalized emittance of 2 π mm mrad, suitable for high energy accelerators. The OPPIS has also been developed for use in a parity non-conservation experiment which has very severe limits on permissible helicity-correlated changes in beam current and energy. (author)

  14. The TRIUMF optically-pumped polarized H- ion source

    Levy, C.D.P.; Jayamanna, K.; McDonald, M.

    1995-09-01

    The TRIUMF dc optically-pumped polarized H - ion source (OPPIS) produces 200 microA dc H - current at 85% polarization within a normalized emittance (90%) of 0.8 π mm mrad, for operations at the TRIUMF cyclotron. As a result of development of the ECR primary proton source, 1.6 mA dc polarized H - current is produced within a normalized emittance of 2 π mm mrad, suitable for high energy accelerators. The OPPIS has also been developed for use in a parity non-conservation experiment which has very severe limits on permissible helicity-correlated changes in beam current and energy

  15. Tunable light source for fiber optic lighting applications

    Narendran, Nadarajah; Bierman, Andrew; Finney, Mark J.; Edwards, Ian K.

    1997-09-01

    This paper examines the possibility of tuning the lamp spectrum to compensate for color distortions in fiber optic lighting systems. Because most optical fibers have strong absorption in the blue and red wavelength regions, white light entering and propagating down an optical fiber suffers varied amounts of attenuation as a function of wavelength. As a result, the light exiting the optical fiber has a greenish tint that the lighting design community considers undesirable in interior lighting applications. HID lamps are commonly used for the light source in this industry. Certain classes of HID lamps tend to shift in color when their operating position or the input voltage to the lamp is changed. An experimental study is being conducted to characterize the color shift properties of a small HID lamp as a function of tilt and input voltage. The study also examines the possibility of exploiting this color shift to compensate for the color distortions caused by optical fibers. The details of the experiment and the results are presented in this manuscript.

  16. Optical coefficients in a semiconductor quantum ring: Electric field and donor impurity effects

    Duque, C. M.; Acosta, Ruben E.; Morales, A. L.; Mora-Ramos, M. E.; Restrepo, R. L.; Ojeda, J. H.; Kasapoglu, E.; Duque, C. A.

    2016-10-01

    The electron states in a two-dimensional quantum dot ring are calculated in the presence of a donor impurity atom under the effective mass and parabolic band approximations. The effect of an externally applied electric field is also taken into account. The wavefunctions are obtained via the exact diagonalization of the problem Hamiltonian using a 2D expansion within the adiabatic approximation. The impurity-related optical response is analyzed via the optical absorption, relative refractive index change and the second harmonics generation. The dependencies of the electron states and these optical coefficients with the changes in the configuration of the quantum ring system are discussed in detail.

  17. Development of a scanning nearfield optical microscope for low-temperature investigations of semiconductor nanostructures

    Hodeck, Kai Friedrich

    2009-01-01

    In the present work the electronic structure of MOCVD-grown InGaAs/GaAs and InAs/GaAs quantum dots which are characterized by a particularly low ground state transition energy, was investigated using Scanning Nearfield Optical Microscopy (SNOM). The pivotal question of the presented investigations is, which influence the interaction of the confined carriers has on the energy states of the biexcitons and the multiexcitons in a quantum dot. Therefore, photoluminescence spectra of single quantum dots were investigated under varying excitation intensity at different temperatures between 5 K and 300 K. The construction of a novel scanning nearfield microscope especially for low temperatures allowed the investigation of single quantum dots. Due to significant improvements of the positioning technology and the shear-force distance control between the sample and the nearfield probe a stable scanning of the quantum dot samples at 5 K could be demonstrated, showing a lateral optical resolution of 200 nm. This way, in the photoluminescence spectroscopy of single quantum dots the thermal linewidth broadening of the detected light was reduced down to a value of less than 1 meV, which allowed the identification of the transitions of biexcitons and multiexcitons. On the basis of the performed measurements, for the InGaAs/GaAs quantum dots a biexciton state was identified, with variable binding energies of 2-7 meV. Furthermore, a positively charged trion state with a binding energy of 11 meV was observed, showing high emission intensity, which can be assigned to the sample doping. Accordingly, for the positively charged biexciton state a binding energy of 11 meV can be announced. For the investigated InAs/GaAs quantum dots a biexciton state with binding energies of 3-4 meV was found. Some of the investigated InAs/GaAs quantum dots showed the formation of positively charged states, in particular of a trion state with a binding energy of 3 meV, and of the positively charged

  18. Development of a scanning nearfield optical microscope for low-temperature investigations of semiconductor nanostructures

    Hodeck, Kai Friedrich

    2009-02-19

    In the present work the electronic structure of MOCVD-grown InGaAs/GaAs and InAs/GaAs quantum dots which are characterized by a particularly low ground state transition energy, was investigated using Scanning Nearfield Optical Microscopy (SNOM). The pivotal question of the presented investigations is, which influence the interaction of the confined carriers has on the energy states of the biexcitons and the multiexcitons in a quantum dot. Therefore, photoluminescence spectra of single quantum dots were investigated under varying excitation intensity at different temperatures between 5 K and 300 K. The construction of a novel scanning nearfield microscope especially for low temperatures allowed the investigation of single quantum dots. Due to significant improvements of the positioning technology and the shear-force distance control between the sample and the nearfield probe a stable scanning of the quantum dot samples at 5 K could be demonstrated, showing a lateral optical resolution of 200 nm. This way, in the photoluminescence spectroscopy of single quantum dots the thermal linewidth broadening of the detected light was reduced down to a value of less than 1 meV, which allowed the identification of the transitions of biexcitons and multiexcitons. On the basis of the performed measurements, for the InGaAs/GaAs quantum dots a biexciton state was identified, with variable binding energies of 2-7 meV. Furthermore, a positively charged trion state with a binding energy of 11 meV was observed, showing high emission intensity, which can be assigned to the sample doping. Accordingly, for the positively charged biexciton state a binding energy of 11 meV can be announced. For the investigated InAs/GaAs quantum dots a biexciton state with binding energies of 3-4 meV was found. Some of the investigated InAs/GaAs quantum dots showed the formation of positively charged states, in particular of a trion state with a binding energy of 3 meV, and of the positively charged

  19. A young source of optical emission from distant radio galaxies.

    Hammer, F; Fèvre, O Le; Angonin, M C

    1993-03-25

    DISTANT radio galaxies provide valuable insights into the properties of the young Universe-they are the only known extended optical sources at high redshift and might represent an early stage in the formation and evolution of galaxies in general. This extended optical emission often has very complex morphologies, but the origin of the light is still unclear. Here we report spectroscopic observations for several distant radio galaxies (0.75≤ z ≤ 1.1) in which the rest-frame spectra exhibit featureless continua between 2,500 Å and 5,000 Å. We see no evidence for the break in the spectrum at 4,000 Å expected for an old stellar population 1-3 , and suggest that young stars or scattered emissions from the active nuclei are responsible for most of the observed light. In either case, this implies that the source of the optical emission is com-parable in age to the associated radio source, namely 10 7 years or less.

  20. Computational Study of Chalcopyrite Semiconductors and Their Non-Linear Optical Properties

    Lambrecht, Walter R

    2007-01-01

    ... (Including cation antisites, cation and anion vacancies) and CdGeAs2; a study of the feasibility of nonciritical phase matching and associated nonlinear optical parameters in CdSiP2 and CdSIAs2...

  1. Analysis of optical properties of strained semiconductor quantum dots for electromagnetically induced transparency

    Barettin, D.; Houmark-Nielsen, Jakob; Lassen, B.

    2010-01-01

    different k*p band structure models. In addition to the separation of the heavy and light holes due to the biaxial strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band mixing effects. We furthermore find a non......Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and identify an optimal height and size for efficient EIT...... operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing four...

  2. Numerical study of the electronic structure, elastic and optical properties of defect quaternary semiconductor CuGaSnSe4

    Shen, Kesheng; Lu, Hai; Zhang, Xianzhou; Jiao, Zhaoyong

    2018-06-01

    The electronic structure, elastic and optical properties of the defect quaternary semiconductor CuGaSnSe4 in I 4 bar structure are systematically investigated using first-principles calculations. We summarize and discuss some of the studies on CuGaSnSe4 in partially ordered chalcopyrite structure and find that there are three atomic arrangements so far, but it is still uncertain which is the most stable. Through detailed simulation and comparison with the corresponding literature, we get three models and predict that M1 model should be the most stable. The band structure and optical properties of compound CuGaSnSe4, including dielectric constant, refractive index and absorption spectrum, are drawn for a more intuitive understanding. The elastic constants are also calculated, which not only prove that CuGaSnSe4 in I 4 bar structure is stable naturally but also help solve the problem of no data to accurately predict axial thermal expansion coefficients. The calculated values of the zero frequency dielectric constant and refractive index are comparable to those of the corresponding chalcopyrite structure but slightly larger.

  3. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

    2018-01-01

    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  4. Cost-Effective Brillouin Optical Time-Domain Analysis Sensor Using a Single Optical Source and Passive Optical Filtering

    H. Iribas

    2016-01-01

    Full Text Available We present a simplified configuration for distributed Brillouin optical time-domain analysis sensors that aims to reduce the cost of the sensor by reducing the number of components required for the generation of the two optical waves involved in the sensing process. The technique is based on obtaining the pump and probe waves by passive optical filtering of the spectral components generated in a single optical source that is driven by a pulsed RF signal. The optical source is a compact laser with integrated electroabsorption modulator and the optical filters are based on fiber Bragg gratings. Proof-of-concept experiments demonstrate 1 m spatial resolution over a 20 km sensing fiber with a 0.9 MHz precision in the measurement of the Brillouin frequency shift, a performance similar to that of much more complex setups. Furthermore, we discuss the factors limiting the sensor performance, which are basically related to residual spectral components in the filtering process.

  5. Optical properties of organic semiconductor thin films. Static spectra and real-time growth studies

    Heinemeyer, Ute

    2009-07-20

    The aim of this work was to establish the anisotropic dielectric function of organic thin films on silicon covered with native oxide and to study their optical properties during film growth. While the work focuses mainly on the optical properties of Diindenoperylene (DIP) films, also the optical response of Pentacene (PEN) films during growth is studied for comparison. Spectroscopic ellipsometry and differential reflectance spectroscopy are used to determine the dielectric function of the films ex-situ and in-situ, i.e. in air and in ultrahigh vacuum. Additionally, Raman- and fluorescence spectroscopy is utilized to characterize the DIP films serving also as a basis for spatially resolved optical measurements beyond the diffraction limit. Furthermore, X-ray reflectometry and atomic force microscopy are used to determine important structural and morphological film properties. The absorption spectrum of DIP in solution serves as a monomer reference. The observed vibronic progression of the HOMO-LUMO transition allows the determination of the Huang-Rhys parameter experimentally, which is a measure of the electronic vibrational coupling. The corresponding breathing modes are measured by Raman spectroscopy. The optical properties of DIP films on native oxide show significant differences compared to the monomer spectrum due to intermolecular interactions. First of all, the thin film spectra are highly anisotropic due to the structural order of the films. Furthermore the Frenkel exciton transfer is studied and the energy difference between Frenkel and charge transfer excitons is determined. Real-time measurements reveal optical differences between interfacial or surface molecules and bulk molecules that play an important role for device applications. They are not only performed for DIP films but also for PEN films. While for DIP films on glass the appearance of a new mode is visible, the spectra of PEN show a pronounced energy red-shift during growth. It is shown how the

  6. Optical Performance of Carbon-Nanotube Electron Sources

    Jonge, Niels de; Allioux, Myriam; Oostveen, Jim T.; Teo, Kenneth B. K.; Milne, William I.

    2005-01-01

    The figure of merit for the electron optical performance of carbon-nanotube (CNT) electron sources is presented. This figure is given by the relation between the reduced brightness and the energy spread in the region of stable emission. It is shown experimentally that a CNT electron source exhibits a highly stable emission process that follows the Fowler-Nordheim theory for field emission, fixing the relationship among the energy spread, the current, and the radius. The performance of the CNT emitter under realistic operating conditions is compared with state-of-the-art electron point sources. It is demonstrated that the reduced brightness is a function of the tunneling parameter, a measure of the energy spread at low temperatures, only, independent of the geometry of the emitter

  7. Joint optimization of source, mask, and pupil in optical lithography

    Li, Jia; Lam, Edmund Y.

    2014-03-01

    Mask topography effects need to be taken into consideration for more advanced resolution enhancement techniques in optical lithography. However, rigorous 3D mask model achieves high accuracy at a large computational cost. This work develops a combined source, mask and pupil optimization (SMPO) approach by taking advantage of the fact that pupil phase manipulation is capable of partially compensating for mask topography effects. We first design the pupil wavefront function by incorporating primary and secondary spherical aberration through the coefficients of the Zernike polynomials, and achieve optimal source-mask pair under the condition of aberrated pupil. Evaluations against conventional source mask optimization (SMO) without incorporating pupil aberrations show that SMPO provides improved performance in terms of pattern fidelity and process window sizes.

  8. Application of optical emission spectroscopy to high current proton sources

    Castro, G; Mazzaglia, M; Nicolosi, D; Mascali, D; Reitano, R; Celona, L; Leonardi, O; Leone, F; Naselli, E; Neri, L; Torrisi, G; Gammino, S; Zaniol, B

    2017-01-01

    Optical Emission Spectroscopy (OES) represents a very reliable technique to carry out non-invasive measurements of plasma density and plasma temperature in the range of tens of eV. With respect to other diagnostics, it also can characterize the different populations of neutrals and ionized particles constituting the plasma. At INFN-LNS, OES techniques have been developed and applied to characterize the plasma generated by the Flexible Plasma Trap, an ion source used as 'testbench' of the proton source built for European Spallation Source. This work presents the characterization of the parameters of a hydrogen plasma in different conditions of neutral pressure, microwave power and magnetic field profile, along with perspectives for further upgrades of the OES diagnostics system. (paper)

  9. Fiber optic distributed temperature sensing for fire source localization

    Sun, Miao; Tang, Yuquan; Yang, Shuang; Sigrist, Markus W.; Li, Jun; Dong, Fengzhong

    2017-08-01

    A method for localizing a fire source based on a distributed temperature sensor system is proposed. Two sections of optical fibers were placed orthogonally to each other as the sensing elements. A tray of alcohol was lit to act as a fire outbreak in a cabinet with an uneven ceiling to simulate a real scene of fire. Experiments were carried out to demonstrate the feasibility of the method. Rather large fluctuations and systematic errors with respect to predicting the exact room coordinates of the fire source caused by the uneven ceiling were observed. Two mathematical methods (smoothing recorded temperature curves and finding temperature peak positions) to improve the prediction accuracy are presented, and the experimental results indicate that the fluctuation ranges and systematic errors are significantly reduced. The proposed scheme is simple and appears reliable enough to locate a fire source in large spaces.

  10. Operation of the optically pumped polarized H- source at LAMPF

    York, R.L.; Tupa, D.; Swenson, D.R.; van Dyck, O.B.

    1991-01-01

    We report on the first five months of operation of the Optically Pumped Polarized Ion Source (OPPIS) for the nuclear physics research program at LAMPF. The LAMPF OPPIS is unique in using Ti: Sapphire lasers to polarize the potassium charge-exchange medium, and until recently was unique in using a superconducting magnet in the ECR source and polarizer regions. The ECR extraction electrode biasing arrangement is also unique. Typical performance was 25 microamps of peak current (measured at 750 keV) with 55% beam polarization or 15 microamps at 62%. Ion source availability was greater than 90%. We also report our planned improvements in preparation for research operation in May of 1991. 3 refs., 4 figs

  11. Water cooled metal optics for the Advanced Light Source

    McKinney, W.R.; Irick, S.C.; Lunt, D.L.J.

    1991-01-01

    The program for providing water cooled metal optics for the Advanced Light Source at Berkeley is reviewed with respect to fabrication and metrology of the surfaces. Materials choices, surface figure and smoothness specifications, and metrology systems for measuring the plated metal surfaces are discussed. Results from prototype mirrors and grating blanks will be presented, which show exceptionally low microroughness and mid-period error. We will briefly describe out improved version of the Long Trace Profiler, and its importance to out metrology program. We have completely redesigned the mechanical, optical and computational parts of the profiler system with the cooperation of Peter Takacs of Brookhaven, Continental Optical, and Baker Manufacturing. Most important is that one of our profilers is in use at the vendor to allow testing during fabrication. Metrology from the first water cooled mirror for an ALS beamline is presented as an example. The preplating processing and grinding and polishing were done by Tucson Optical. We will show significantly better surface microroughness on electroless nickel, over large areas, than has been reported previously

  12. Magneto-optical and transport studies of ZnO-based dilute magnetic semiconductors

    Behan, A.J. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Neal, J.R. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom)]. E-mail: J.R.Neal@Sheffield.ac.uk; Ibrahim, R.M. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Mokhtari, A. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Ziese, M. [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Abteilung Supra leitung und Magnetismus, Linnestrasse 5, 04103 Leipzig (Germany); Blythe, H.J. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Fox, A.M. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Gehring, G.A. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom)

    2007-03-15

    Thin film samples of ZnO doped with V were grown on sapphire substrates by pulsed laser deposition (PLD). The magnetization was measured by SQUID magnetometry and the films were found to be ferromagnetic at room temperature. The transmission, Faraday rotation and magnetic circular dichroism were measured as a function of frequency at room temperature over an energy range of 1.5-4.0 eV and carrier concentrations were determined from Hall effect measurements. Clear magneto-optical signals that are ferromagnetic in origin were observed at the ZnO band edge and the optimal conditions for observing large ferromagnetic magneto-optic signals are discussed.

  13. Crystalline α-Sm2S3 nanowires: Structure and optical properties of an unusual intrinsically degenerate semiconductor

    Marin, Chris M.; Wang, Lu; Brewer, Joseph R.; Mei, Wai-Ning; Cheung, Chin Li

    2013-01-01

    Highlights: ► Developed a rapid synthetic method to generate thin films of α-Sm 2 S 3 nanowires. ► Calculated the electronic structure of α-Sm 2 S 3 by density functional theory. ► Predicted that α-Sm 2 S 3 is an intrinsically degenerate p-type semiconductor. ► Found that the gap in the band states of α-Sm 2 S 3 could be engineered to 1.3 eV via sulfur vacancy. -- Abstract: The lanthanide sulfides have long been a promising class of semiconductors because of their infrared-to-visible range band gaps and excellent thermoelectric properties. However, their applications have been limited due to their time consuming conventional synthetic processes and the lack of sufficient understanding of their electronic properties. To address these shortcomings, here we report a rapid, chemical vapor deposition route which results in thin films of crystalline α-phase samarium sesquisulfide (α-Sm 2 S 3 ) nanowires within a few hours, rather than the typical 4–7 days required in previous synthetic processes. In addition, density functional theory was, for the first time, utilized to calculate the electronic band structure of α-Sm 2 S 3 in order to shed insight into the interpretation of their UV–Vis absorption spectrum. We found that the theoretical direct gap in the band states of α-Sm 2 S 3 is 1.7 eV. Computation results suggest that this gap can be tuned to a solar optimal ∼1.3 eV via systematic sulfur vacancy sites engineered into the crystal structure. Most significantly, the degenerate semiconductor-like behavior long observed in lanthanide sulfide samples have been shown to be present even in the ideal α-Sm 2 S 3 structure, suggesting that the observed heavily p-type behavior is an unusual intrinsic property of the material resulting from the Fermi level being located significantly below the optically active 1.7 eV band edge

  14. CENTRAL WAVELENGTH ADJUSTMENT OF LIGHT EMITTING SOURCE IN INTERFEROMETRIC SENSORS BASED ON FIBER-OPTIC BRAGG GRATINGS

    A. S. Aleynik

    2015-09-01

    Full Text Available The paper is focused on the investigation of fiber-optic interferometric sensor based on the array of fiber Bragg gratings. Reflection spectra displacement mechanism of the fiber Bragg gratings under the external temperature effects and the static pressure is described. The experiment has shown that reflection spectra displacement of Bragg gratings reduces the visibility of the interference pattern. A method of center wavelength adjustment is proposed for the optical radiation source in accord ance with the current Bragg gratings reflection spectra based on the impulse relative modulation of control signal for the Peltier element controller. The semiconductor vertical-cavity surface-emitting laser controlled by a pump driver is used as a light source. The method is implemented by the Peltier element controller regulating and stabilizing the light source temperature, and a programmable logic-integrated circuit monitoring the Peltier element controller. The experiment has proved that the proposed method rendered possible to regulate the light source temperature at a pitch of 0.05 K and adjust the optical radiation source center wavelength at a pitch of 0.05 nm. Experimental results have revealed that the central wavelength of the radiation adjustment at a pitch of 0.005 nm gives the possibility for the capacity of the array consisting of four opticalfiber sensors based on the fiber Bragg gratings. They are formed in one optical fiber under the Bragg grating temperature change from 0° C to 300° C and by the optical fiber mechanical stretching by the force up to 2 N.

  15. Spin physics in semiconductors

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  16. Synthesis, structural, thermal and optical studies of inorganic-organic hybrid semiconductors, R-PbI4

    Pradeesh, K.; Nageswara Rao, K.; Vijaya Prakash, G.

    2013-02-01

    Wide varieties of naturally self-assembled two-dimensional inorganic-organic (IO) hybrid semiconductors, (4-ClC6H4NH3)2PbI4, (C6H9C2H4NH3)2PbI4, (CnH2n+1NH3)2PbI4 (where n = 12, 16, 18), (CnH2n-1NH3)2PbI4 (where n = 3, 4, 5), (C6H5C2H4NH3)2PbI4, NH3(CH2)12NH3PbI4, and (C4H3SC2H4NH3)2PbI4, were fabricated by intercalating structurally diverse organic guest moieties into lead iodide perovskite structure. The crystal packing of all these fabricated IO-hybrids comprises of well-ordered organic and inorganic layers, stacked-up alternately along c-axis. Almost all these hybrids are thermally stable upto 200 °C and show strong room-temperature exciton absorption and photoluminescence features. These strongly confined optical excitons are highly influenced by structural deformation of PbI matrix due to the conformation of organic moiety. A systematic correlation of optical exciton behavior of IO-hybrids with the organic/inorganic layer thicknesses, intercalating organic moieties, and various structural disorders were discussed. This systematic study clearly suggests that the PbI layer crumpling is directly responsible for the tunability of optical exciton energy.

  17. Evaluation of structural and optical properties of Ce3+ ions doped (PVA/PVP) composite films for new organic semiconductors

    Ali, F. M.; Kershi, R. M.; Sayed, M. A.; AbouDeif, Y. M.

    2018-06-01

    Polymer blend films based on Polyvinyl alcohol (PVA)/Poly(vinylpyrrolidone) (PVP) doped with different concentration of cerium ions [(PVA/PVP)-x wt.% Ce3+] (x = 3%, 5%, 10% and 15%) were prepared by the conventional solution casting technique. The characteristics of the prepared polymer composite films were studied using X-ray diffraction (XRD), FT-IR and UV-Vis. spectroscopy. The XRD patterns of the investigated samples revealed a clear reduction on the structural parameters such as crystallinity degree and cluster size D of the doped PVA/PVP blend films compared with the virgin one whereas there is no big difference in the d spacing of the product composite films. Significant changes in FT-IR spectra are observed which reveal an interactions between the cerium ions and PVA/PVP blends. The absorption spectra in the ultraviolet-visible region showed a wide red shift in the fundamental absorption edge of (PVA/PVP)-x wt. % Ce3+ composites. The optical gap Eg gradually decreased from 4.54 eV for the undoped PVA/PVP film to 3.10 eV by increasing Ce3+ ions content. The optical dispersion parameters have been analyzed according to Wemple-Didomenico single oscillator model. The dispersion energy Ed, the single oscillator energy Eo, the average inter-band oscillator wavelength λo and the static refractive index no are strongly affected by cerium ions doping. Cerium ions incorporation in PVA/PVP blend films leads to a significant increase in the refractive index and decrease in the optical gap. These results are likely of great important in varieties of applications including polymer waveguides, organic semiconductors, polymer solar cells and optoelectronics devices.

  18. First-principle calculations of the electronic, optical and elastic properties of ZnSiP2 semiconductor

    Kumar, V.; Tripathy, S.K.

    2014-01-01

    Highlights: • Optical properties of ZnSiP 2 studied under different pressure for stable structure. • Birefringence has been calculated at different wavelengths. • Lattice constants, ħω p , bulk modulus and its derivative have been calculated. • C ij , Y, υ and Zener anisotropic factor have also been estimated. • Our calculated values are relative more close to the experimental values. -- Abstract: The plane wave pseudo-potential method within density functional theory (DFT) has been used to investigate the structural, electronic, optical and elastic properties of ZnSiP 2 chalcopyrite semiconductor. The lattice constants are calculated from the optimized unit cells and compare with the experimental value. The band structure, total density of states (TDOS) and partial density of states (PDOS) have been discussed. The energy gap has been calculated along the Γ direction found to be 1.383 eV, which shows that ZnSiP 2 is pseudo-direct in nature. We have also analyzed the frequency dependent dielectric constant ε(ω) and calculated the birefringence (Δn). The optical properties under three different hydrostatic pressures of 0 GPa, 10 GPa and 20 GPa have been described for the first time in the energy range 0–20 eV. The values of bulk modulus (B), pressure derivative of bulk modulus (B ∗ ), elastic constants (C ij ), Young’s modulus (Y), anisotropic factor (A) and Poisson’s ratio (ν) have been calculated. The calculated values of all above parameters are compared with the available experimental values and the values reported by different workers. A fairly good agreement has been found between them

  19. Optical arc sensor using energy harvesting power source

    Choi, Kyoo Nam; Rho, Hee Hyuk

    2016-06-01

    Wireless sensors without external power supply gained considerable attention due to convenience both in installation and operation. Optical arc detecting sensor equipping with self sustaining power supply using energy harvesting method was investigated. Continuous energy harvesting method was attempted using thermoelectric generator to supply standby power in micro ampere scale and operating power in mA scale. Peltier module with heat-sink was used for high efficiency electricity generator. Optical arc detecting sensor with hybrid filter showed insensitivity to fluorescent and incandescent lamps under simulated distribution panel condition. Signal processing using integrating function showed selective arc discharge detection capability to different arc energy levels, with a resolution below 17J energy difference, unaffected by bursting arc waveform. The sensor showed possibility for application to arc discharge detecting sensor in power distribution panel. Also experiment with proposed continuous energy harvesting method using thermoelectric power showed possibility as a self sustainable power source of remote sensor.

  20. Optical arc sensor using energy harvesting power source

    Choi, Kyoo Nam, E-mail: knchoi@inu.ac.kr; Rho, Hee Hyuk, E-mail: rdoubleh0902@inu.ac.kr [Dept. of Information and Telecommunication Engineering Incheon National University Incheon 22012 (Korea, Republic of)

    2016-06-03

    Wireless sensors without external power supply gained considerable attention due to convenience both in installation and operation. Optical arc detecting sensor equipping with self sustaining power supply using energy harvesting method was investigated. Continuous energy harvesting method was attempted using thermoelectric generator to supply standby power in micro ampere scale and operating power in mA scale. Peltier module with heat-sink was used for high efficiency electricity generator. Optical arc detecting sensor with hybrid filter showed insensitivity to fluorescent and incandescent lamps under simulated distribution panel condition. Signal processing using integrating function showed selective arc discharge detection capability to different arc energy levels, with a resolution below 17 J energy difference, unaffected by bursting arc waveform. The sensor showed possibility for application to arc discharge detecting sensor in power distribution panel. Also experiment with proposed continuous energy harvesting method using thermoelectric power showed possibility as a self sustainable power source of remote sensor.

  1. Optical spin-transfer-torque-driven domain-wall motion in a ferromagnetic semiconductor

    Ramsay, A.J.; Roy, P.E.; Haigh, J.A.; Otxoa, R.M.; Irvine, A.C.; Janda, T.; Campion, R. P.; Gallagher, B. L.; Wunderlich, Joerg

    2015-01-01

    Roč. 114, č. 6 (2015), "067202-1"-"067202-5" ISSN 0031-9007 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : magnetic domain walls * magneto-optics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.645, year: 2015

  2. Magneto-optical response of layers of semiconductor quantum dots and nanorings

    Voskoboynikov, O.; Wijers, Christianus M.J.; Liu, J.L.; Lee, C.P.

    2005-01-01

    In this paper a comparative theoretical study was made of the magneto-optical response of square lattices of nanoobjects (dots and rings). Expressions for both the polarizability of the individual objects as their mutual electromagnetic interactions (for a lattice in vacuum) was derived. The

  3. Transient changes of optical properties in semiconductors in response to femtosecond laser pulses

    Tkachenko, V.; Medvedev, Nikita; Ziaja, B.

    2016-01-01

    Roč. 6, č. 9 (2016), 1-12, č. článku 238. ISSN 2076-3417 Institutional support: RVO:68378271 Keywords : free-electron lasers * transient optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.679, year: 2016

  4. Optical mixing of microwave signals in a nonlinear semiconductor laser amplifier modulator.

    Capmany, José; Sales, Salvador; Pastor, Daniel; Ortega, Beatriz

    2002-02-11

    In this paper we propose and evaluate the optical mixing of RF signals by means of exploiting the nonlinearity of a SLA modulator. The results show the potential for devices with low conversion losses (and even gain) and polarization insensitivity and reduced insertion losses.

  5. Development of Highly Ordered Heterostructured Semiconductor Nanowire Arrays for Sub-Wavelength Optical Devices

    2007-06-01

    properties of nanowires" J. Appl. Phys 98, 094306 (2005) 9. Harry E. Ruda and Alexander Shik, "Polarization-sensitive optical properties of metallic and...34Biexcitons in parabolic quantum dots", Phys. Rev. B. 73, 125321 (2006). 11. M. Blumin, H.E. Ruda, I. Savelyev , A Shik and H. Wang, "Self-assembled InAs

  6. Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

    Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

    2018-01-01

    We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

  7. A radio and optical study of Molonglo radio sources

    Ishwara-Chandra, C. H.; Saikia, D. J.; McCarthy, P. J.; van Breugel, W. J. M.

    2001-05-01

    We present multi-wavelength radio observations with the Very Large Array, and narrow- and broad-band optical observations with the 2.5-m telescope at the Las Campanas Observatory, of a well-defined sample of high-luminosity Fanaroff-Riley class II radio galaxies and quasars, selected from the Molonglo Reference Catalogue 1-Jy sample. These observations were carried out as part of a programme to investigate the effects of orientation and environment on some of the observed properties of these sources. We examine the dependence of the Liu-Pooley relationship, which shows that radio lobes with flatter radio spectra are less depolarized, on size, identification and redshift, and show that it is significantly stronger for smaller sources, with the strength of the relationship being similar for both radio galaxies and quasars. In addition to Doppler effects, there appear to be intrinsic differences between the lobes on opposite sides. We discuss the asymmetry in brightness and location of the hotspots, and present estimates of the ages and velocities from matched-resolution observations in the L and C bands. Narrow- and broad-band optical images of some of these sources were made to study their environments and correlate with the symmetry parameters. An extended emission-line region is seen in a quasar, and in four of the objects possible companion galaxies are seen close to the radio axis.

  8. Dual-Source Swept-Source Optical Coherence Tomography Reconstructed on Integrated Spectrum

    Shoude Chang

    2012-01-01

    Full Text Available Dual-source swept-source optical coherence tomography (DS-SSOCT has two individual sources with different central wavelengths, linewidth, and bandwidths. Because of the difference between the two sources, the individually reconstructed tomograms from each source have different aspect ratio, which makes the comparison and integration difficult. We report a method to merge two sets of DS-SSOCT raw data in a common spectrum, on which both data have the same spectrum density and a correct separation. The reconstructed tomographic image can seamlessly integrate the two bands of OCT data together. The final image has higher axial resolution and richer spectroscopic information than any of the individually reconstructed tomography image.

  9. Optical response of hybrid semiconductor quantum dot-metal nanoparticle system: Beyond the dipole approximation

    Mohammadzadeh, Atefeh; Miri, MirFaez

    2018-01-01

    We study the response of a semiconductor quantum dot-metal nanoparticle system to an external field E 0 cos ( ω t ) . The borders between Fano, double peaks, weak transition, strong transition, and bistability regions of the phase diagram move considerably as one regards the multipole effects. The exciton-induced transparency is an artifact of the dipole approximation. The absorption of the nanoparticle, the population inversion of the quantum dot, the upper and lower limits of intensity where bistability occurs, the characteristic time to reach the steady state, and other features of the hybrid system change due to the multipole effects. The phase diagrams corresponding to the fields parallel and perpendicular to the axis of system are quite distinguishable. Thus, both the intensity and the polarization of the incident field can be used to control the system. In particular, the incident polarization can be used to switch on and switch off the bistable behavior. For applications such as miniaturized bistable devices and nanosensors sensitive to variations of the dielectric constant of the surrounding medium, multipole effects must be considered.

  10. Optical third harmonic generation in the magnetic semiconductor EuSe

    Lafrentz, M.; Brunne, D.; Kaminski, B.; Pavlov, V. V.; Pisarev, R. V.; Henriques, A. B.; Yakovlev, D. R.; Springholz, G.; Bauer, G.; Bayer, M.

    2012-01-01

    Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the band gap at 2.1-2.6 eV and at higher energies up to 3.7 eV. EuSe is a magnetic semiconductor crystalizing in centrosymmetric structure of rock-salt type with the point group m3m. For this symmetry the crystallographic and magnetic-field-induced THG nonlinearities are allowed in the electric-dipole approximation. Using temperature, magnetic field, and rotational anisotropy measurements, the crystallographic and magnetic-field-induced contributions to THG were unambiguously separated. Strong resonant magnetic-field-induced THG signals were measured at energies in the range of 2.1-2.6 eV and 3.1-3.6 eV for which we assign to transitions from 4f7 to 4f65d1 bands, namely involving 5d(t2g) and 5d(eg) states.

  11. Planets as background noise sources in free space optical communications

    Katz, J.

    1986-01-01

    Background noise generated by planets is the dominant noise source in most deep space direct detection optical communications systems. Earlier approximate analyses of this problem are based on simplified blackbody calculations and can yield results that may be inaccurate by up to an order of magnitude. Various other factors that need to be taken into consideration, such as the phase angle and the actual spectral dependence of the planet albedo, in order to obtain a more accurate estimate of the noise magnitude are examined.

  12. Glow discharge lamp: a light source for optical emission spectroscopy

    Vishwanathan, K.S.; Srinivasan, V.; Nalini, S.; Mahalingam, T.R.

    1990-01-01

    A glow discharge lamp based on a modified version of the Grimm design has been fabricated. Its utility as a radiation source for optical emmission spectrography by standardising a method for the analysis of low alloy steels using a set of certified standards from DMRL, Hyderabad, has been demonstrated. A model has been proposed where the sputtering rates of different metals have been correlated with their heats of sublimation, metallic radii and densities. Sputtering rates of ten different metals obtained from literature have been used to test this model, and the correlation appears to be excellent. (author). 19 re fs., 13 figs., 2 tabs

  13. Configuration of electro-optic fire source detection system

    Fabian, Ram Z.; Steiner, Zeev; Hofman, Nir

    2007-04-01

    The recent fighting activities in various parts of the world have highlighted the need for accurate fire source detection on one hand and fast "sensor to shooter cycle" capabilities on the other. Both needs can be met by the SPOTLITE system which dramatically enhances the capability to rapidly engage hostile fire source with a minimum of casualties to friendly force and to innocent bystanders. Modular system design enable to meet each customer specific requirements and enable excellent future growth and upgrade potential. The design and built of a fire source detection system is governed by sets of requirements issued by the operators. This can be translated into the following design criteria: I) Long range, fast and accurate fire source detection capability. II) Different threat detection and classification capability. III) Threat investigation capability. IV) Fire source data distribution capability (Location, direction, video image, voice). V) Men portability. ) In order to meet these design criteria, an optimized concept was presented and exercised for the SPOTLITE system. Three major modular components were defined: I) Electro Optical Unit -Including FLIR camera, CCD camera, Laser Range Finder and Marker II) Electronic Unit -including system computer and electronic. III) Controller Station Unit - Including the HMI of the system. This article discusses the system's components definition and optimization processes, and also show how SPOTLITE designers successfully managed to introduce excellent solutions for other system parameters.

  14. Optical, Electrical and Magnetic Studies of Pi-Conjugated Organic Semiconductor Systems

    Vardeny, Zeev Valentine [Univ. of Utah, Salt Lake City, UT (United States)

    2016-09-15

    Over the duration of this grant our group has studied the transient and cw optical response of various π-conjugated polymers, oligomers, single crystals, fullerene molecules and blends of organic donor-acceptor molecules. We have been also involved in complementary experiments such as magneto-optical studies and spin-physics. We have advanced the field of photophysics of these materials by providing information on their excited state energies and primodal and long-lived photoexcitations such as singlet excitons, triplet excitons, polaron-pairs, excimers and exciplexes. We also fabricated various organic optoelectronic devices such as organic light emitting diodes (OLED), electrochemical cells, organic diodes, organic spin-valves (OSV), and organic photovoltaic (OPV) solar cells. These devices benefited the society in terms of cheap and energy saving illumination, as well as harnessing the solar energy.

  15. Phase-dependent optical bistability and multistability in a semiconductor quantum well system

    Wang Zhiping; Fan Hongyi

    2010-01-01

    We theoretically investigate the hybrid absorptive-dispersive optical bistability and multistability in a four-level inverted-Y quantum well system inside a unidirectional ring cavity. We find that the coupling field, the pumping field as well as the cycling field can affect the optical bistability and multistability dramatically, which can be used to manipulate efficiently the threshold intensity and the hysteresis loop. The effects of the relative phase and the electronic cooperation parameter on the OB and OM are also studied. Our study is much more practical than its atomic counterpart due to its flexible design and the wide adjustable parameters. Thus, it may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science.

  16. Optimal operating conditions for external cavity semiconductor laser optical chaos communication system

    Priyadarshi, S; Pierce, I; Hong, Y; Shore, K A

    2012-01-01

    In optical chaos communications a message is masked in the noise-like broadband output of a chaotic transmitter laser, and message recovery is enabled through the synchronization of the transmitter and the (chaotic) receiver laser. Key issues are to identify the laser operating conditions which provide the highest quality synchronization conditions and those which provide optimized message extraction. In general such operating conditions are not coincident. In this paper numerical simulations are performed with the aim of identifying a regime of operation where the highest quality synchronization and optimizing message extraction efficiency are achieved simultaneously. Use of such an operating regime will facilitate practical deployment of optical chaos communications systems without the need for re-adjustment of laser operating conditions in the field. (paper)

  17. Carrier states and optical response in core-shell-like semiconductor nanostructures

    Duque, C. M.; Mora-Ramos, M. E.; Duque, C. A.

    2017-02-01

    The charge carrier states in a GaAs/Al?Ga?As axially symmetric core-shell quantum wire are calculated in the effective mass approximation via a spectral method. The possible presence of externally applied electric and magnetic fields is taken into account, together with the variation in the characteristic in-plane dimensions of the structure. The obtained energy spectrum is used to evaluate the optical response through the coefficients of intersubband optical absorption and relative refractive index change. The particular geometry of the system also allows to use the same theoretical model in order to determine the photoluminescence peak energies associated to correlated electron-hole states in double GaAs/Al?Ga?As quantum rings, showing a good agreement when they are compared with recent experimental reports. This agreement may validate the use of both the calculation process and the approximate model of abrupt, circularly shaped cross section geometry for the system.

  18. Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

    Liu, Ansheng; Ning, Cun-Zheng

    2000-01-01

    Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

  19. Optically induced charge transport in mesoscopic semiconductor systems; Optisch induzierter Ladungstransport in mesoskopischen Halbleitersystemen

    Hof, Klaus-Dieter

    2009-07-13

    In the framework of this thesis optoelectronic processes in a to a quantum-dot contact nanostructured heterostructure were studied. In the experiment thereby by means of a laser in a 2DES heterostructure charge carriers were optically induced in the neighbourhood of a quantum-dot contact. Thereafter their effect on the electronic transport through the quantum-dot contact in the sample is studied. In the planely etched samples the purely electronic conductivity measurements indicate with the conductivity stages a one-dimensional subband quantization. The energetic distance of the subband bottoms amounts up to 5 meV. Furthermore the measurement in the magnetic field shows a transition of the subband structure over magnetoelectric bands to the pure Landau quantization. First photoresponse measurement s show under illumination the effect of an unwanted parallel conductivity. This effect can be suppressed by changed sample design and optimized wafer material. By this photoresponse measurements on the free-sttanding bridge samples and planely etched qunatum-dot contact samples. In low-frequency photoresponse measurements in both sample types the effect of an optically induced conductivity change can be identified. A simple model of the optically induced photoconductivity is introduced, which shows in the framework of a numerical simulation a very good agreement with the measurement data and allows the identification of the experimentally determined time constant. By application of for radiofrequencies suited components the experiment can be performed also at higher-frequent modulation of the optical excitation. Thereby it was proved that the effect of the photoinduced conductivity change because of its relatively high time constant generates for excitations in the MHz range a quasi-static conductivity state and the sample conductivity experiences therefore on a fast time scale no change.

  20. Single-photon semiconductor photodiodes for distributed optical fiber sensors: state of the art and perspectives

    Ripamonti, Giancarlo; Lacaita, Andrea L.

    1993-03-01

    The extreme sensitivity and time resolution of Geiger-mode avalanche photodiodes (GM- APDs) have already been exploited for optical time domain reflectometry (OTDR). Better than 1 cm spatial resolution in Rayleigh scattering detection was demonstrated. Distributed and quasi-distributed optical fiber sensors can take advantage of the capabilities of GM-APDs. Extensive studies have recently disclosed the main characteristics and limitations of silicon devices, both commercially available and developmental. In this paper we report an analysis of the performance of these detectors. The main characteristics of GM-APDs of interest for distributed optical fiber sensors are briefly reviewed. Command electronics (active quenching) is then introduced. The detector timing performance sets the maximum spatial resolution in experiments employing OTDR techniques. We highlight that the achievable time resolution depends on the physics of the avalanche spreading over the device area. On the basis of these results, trade-off between the important parameters (quantum efficiency, time resolution, background noise, and afterpulsing effects) is considered. Finally, we show first results on Germanium devices, capable of single photon sensitivity at 1.3 and 1.5 micrometers with sub- nanosecond time resolution.

  1. Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells

    Mahshid Mokhtarnejad

    2017-01-01

    Full Text Available This study examined MQWs made of InGaAs/GaAs, InAlAs/InP, and InGaAs/InP in terms of their band structure and reflectivity. We also demonstrated that the reflectivity of MQWs under normal incident was at maximum, while both using a strong pump and changing incident angle reduced it. Reflectivity of the structure for a weak probe pulse depends on polarization, intensity of the pump pulse, and delay between the probe pulse and the pump pulse. So this system can be used as an ultrafast all-optical switch which is inspected by the transfer matrix method. After studying the band structure of the one-dimensional photonic crystal, the optical stark effect (OSE was considered on it. Due to the OSE on virtual exciton levels, the switching time can be in the order of picoseconds. Moreover, it is demonstrated that, by introducing errors in width of barrier and well as well as by inserting defect, the reflectivity is reduced. Thus, by employing the mechanism of stark effect MQWs band-gaps can be easily controlled which is useful in designing MWQ based optical switches and filters. By comparing the results, we observe that the reflectivity of MWQ containing 200 periods of InAlAs/InP quantum wells shows the maximum reflectivity of 96%.

  2. Synthesis, optical properties and photostability of novel fluorinated organic–inorganic hybrid (R–NH3)2PbX4 semiconductors

    Wei, Y; Lauret, J-S; Deleporte, E; Audebert, P; Galmiche, L

    2013-01-01

    We report on the synthesis and the optical properties of several novel semiconductors (R–NH 3 ) 2 PbX 4 (X = Br − , I − or Cl − ). These semiconductors are two-dimensional organic–inorganic perovskite (2DOIP) materials and have multiple quantum-well energy level structures. We vary the organic components (R-NH 3 + ), introducing fluorine atoms into the organic part, on the phenyl ring of the amine. We discuss its influence on the self-organization ability and long-term photostability of the 2DOIPs. The trends of introducing fluorine atoms on the self-organization and long-term photostability of 2DOIPs are obtained by analysing the optical experimental results, and show that the influence of the fluorine position on the benzene ring is quite important. The most promising compounds seem to be the ones with the fluorine atom sitting on the para position of the phenyl group. (paper)

  3. Development of optical spectrum acquisition with spectrophotometer for characterization of optical radiation sources

    Solano Vargas, Alvaro

    2013-01-01

    An improved process of the data acquisition system is developed with Pasco 750 interface and Pasco OS-8539 spectrophotometer. The optical spectrum and color temperature of incandescent sources available are obtained from the Laboratorio de Fotonica y Tecnologia Laser Aplicada. The procedures developed in the project are recommended to collect data and analyze results. The purchase of a new Software and the interface of Pasco is recommended to have a better operation and update [es

  4. All fiber optics circular-state swept source polarization-sensitive optical coherence tomography.

    Lin, Hermann; Kao, Meng-Chun; Lai, Chih-Ming; Huang, Jyun-Cin; Kuo, Wen-Chuan

    2014-02-01

    A swept source (SS)-based circular-state (CS) polarization-sensitive optical coherence tomography (PS-OCT) constructed entirely with polarization-maintaining fiber optics components is proposed with the experimental verification. By means of the proposed calibration scheme, bulk quarter-wave plates can be replaced by fiber optics polarization controllers to, therefore, realize an all-fiber optics CS SSPS-OCT. We also present a numerical dispersion compensation method, which can not only enhance the axial resolution, but also improve the signal-to-noise ratio of the images. We demonstrate that this compact and portable CS SSPS-OCT system with an accuracy comparable to bulk optics systems requires less stringent lens alignment and can possibly serve as a technology to realize PS-OCT instrument for clinical applications (e.g., endoscopy). The largest deviations in the phase retardation (PR) and fast-axis (FA) angle due to sample probe in the linear scanning and a rotation angle smaller than 65 deg were of the same order as those in stationary probe setups. The influence of fiber bending on the measured PR and FA is also investigated. The largest deviations of the PR were 3.5 deg and the measured FA change by ~12 to 21 deg. Finally, in vivo imaging of the human fingertip and nail was successfully demonstrated with a linear scanning probe.

  5. Semiconductor annealing

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  6. L-Asparagine crystals with wide gap semiconductor features: optical absorption measurements and density functional theory computations.

    Zanatta, G; Gottfried, C; Silva, A M; Caetano, E W S; Sales, F A M; Freire, V N

    2014-03-28

    Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences Δa, Δb, Δc between theory and experiment were as small as 0.020, 0.051, and 0.022 Å, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z → Γ and Z → β transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to α3 → Γ, α1 → Γ, and α2 → Γ transitions, respectively. Δ-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2p-carboxyl, C 2p-side chain, and C 2p-carboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical

  7. L-asparagine crystals with wide gap semiconductor features: Optical absorption measurements and density functional theory computations

    Zanatta, G.; Gottfried, C. [Departamento de Bioquímica, Universidade Federal do Rio Grande do Sul, 90035-003 Porto Alegre-RS (Brazil); Silva, A. M. [Universidade Estadual do Piauí, 64260-000 Piripiri-Pi (Brazil); Caetano, E. W. S., E-mail: ewcaetano@gmail.com [Instituto de Educação, Ciência e Tecnologia do Ceará, 60040-531 Fortaleza-CE (Brazil); Sales, F. A. M.; Freire, V. N. [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza-CE (Brazil)

    2014-03-28

    Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences Δa, Δb, Δc between theory and experiment were as small as 0.020, 0.051, and 0.022 Å, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z → Γ and Z → β transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to α3 → Γ, α1 → Γ, and α2 → Γ transitions, respectively. Δ-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2p–carboxyl, C 2p–side chain, and C 2p–carboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical

  8. Optical absorption spectra of semiconductors and insulators: ab initio calculation of many-body effects

    Albrecht, Stefan

    1999-01-01

    A method for the inclusion of self-energy and excitonic effects in first-principle calculations of absorption spectra, within the state-of-the-art plane wave pseudopotential approach, is presented. Starting from a ground state calculation, using density functional theory (DFT) in the local density approximation (LDA), we correct the exchange-correlation potential of DFT-LDA with the self-energy applying Hedin's GW approximation to obtain the physical quasiparticles states. The electron-hole interaction is treated solving an effective two-particle equation, which we derive from Hedin's coupled integral equations, leading to the fundamental Bethe-Salpeter equation in an intermediate step. The interaction kernel contains the screened electron-hole Coulomb interaction and the electron-hole exchange effects, which reflect the microscopic structure of the system and are thus also called local-field effects. We obtain the excitonic eigenstates through diagonalization. This allows us a detailed analysis of the optical properties. The application of symmetry properties enables us to reduce the size of the two-particle Hamiltonian matrix, thus minimizing the computational effort. We apply our method to silicon, diamond, lithium oxide and the sodium tetramer. Good agreement with experiment is obtained for the absorption spectra of Si and diamond, the static dielectric constant of diamond, and for the onset of optical absorption of Li 2 O due to discrete bound excitons. We discuss various approximations of our method and show the strong mixing of independent particle transitions to a bound excitonic state in the Na 4 cluster. The influence of ground state calculations on optical spectra is investigated under particular consideration of the pseudopotential generation and we discuss the use of different Brillouin zone point sampling schemes for spectral calculations. (author) [fr

  9. Decoherence processes during optical manipulation of excitonic qubits in semiconductor quantum dots

    Wang, Q. Q.; Muller, A.; Bianucci, P.; Rossi, E.; Xue, Q. K.; Takagahara, T.; Piermarocchi, C.; MacDonald, A. H.; Shih, C. K.

    2005-07-01

    Using photoluminescence spectroscopy, we have investigated the nature of Rabi oscillation damping during optical manipulation of excitonic qubits in self-assembled quantum dots. Rabi oscillations were recorded by varying the pulse amplitude for fixed pulse durations between 4ps and 10ps . Up to five periods are visible, making it possible to quantify the excitation dependent damping. We find that this damping is more pronounced for shorter pulse widths and show that its origin is the nonresonant excitation of carriers in the wetting layer, most likely involving bound-to-continuum and continuum-to-bound transitions.

  10. Spin and Optical Characterization of Defects in Group IV Semiconductors for Quantum Memory Applications

    Rose, Brendon Charles

    This thesis is focused on the characterization of highly coherent defects in both silicon and diamond, particularly in the context of quantum memory applications. The results are organized into three parts based on the spin system: phosphorus donor electron spins in silicon, negatively charged nitrogen vacancy color centers in diamond (NV-), and neutrally charged silicon vacancy color centers in diamond (SiV0). The first part on phosphorus donor electron spins presents the first realization of strong coupling with spins in silicon. To achieve this, the silicon crystal was made highly pure and highly isotopically enriched so that the ensemble dephasing time, T2*, was long (10 micros). Additionally, the use of a 3D resonator aided in realizing uniform coupling, allowing for high fidelity spin ensemble manipulation. These two properties have eluded past implementations of strongly coupled spin ensembles and have been the limiting factor in storing and retrieving quantum information. Second, we characterize the spin properties of the NV- color center in diamond in a large magnetic field. We observe that the electron spin echo envelope modulation originating from the central 14N nuclear spin is much stronger at large fields and that the optically induced spin polarization exhibits a strong orientation dependence that cannot be explained by the existing model for the NV- optical cycle, we develop a modification of the existing model that reproduces the data in a large magnetic field. In the third part we perform characterization and stabilization of a new color center in diamond, SiV0, and find that it has attractive, highly sought-after properties for use as a quantum memory in a quantum repeater scheme. We demonstrate a new approach to the rational design of new color centers by engineering the Fermi level of the host material. The spin properties were characterized in electron spin resonance, revealing long spin relaxation and spin coherence times at cryogenic

  11. Wideband 360 degrees microwave photonic phase shifter based on slow light in semiconductor optical amplifiers.

    Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

    2010-03-15

    In this work we demonstrate for the first time, to the best of our knowledge, a continuously tunable 360 degrees microwave phase shifter spanning a microwave bandwidth of several tens of GHz (up to 40 GHz). The proposed device exploits the phenomenon of coherent population oscillations, enhanced by optical filtering, in combination with a regeneration stage realized by four-wave mixing effects. This combination provides scalability: three hybrid stages are demonstrated but the technology allows an all-integrated device. The microwave operation frequency limitations of the suggested technique, dictated by the underlying physics, are also analyzed.

  12. IDENTIFICATIONS OF FIVE INTEGRAL SOURCES VIA OPTICAL SPECTROSCOPY

    Butler, Suzanne C.; Tomsick, John A.; Chaty, Sylvain; Heras, Juan A. Zurita; Rodriguez, Jerome; Walter, Roland; Kaaret, Philip; Kalemci, Emrah; Oezbey, Mehtap

    2009-01-01

    The International Gamma-Ray Astrophysics Laboratory (INTEGRAL) is discovering hundreds of new hard X-ray sources, many of which remain unidentified. We report on optical spectroscopy of five such sources for which X-ray observations at lower energies (∼0.5-10 keV) and higher angular resolutions than INTEGRAL have allowed for unique optical counterparts to be located. We find that INTEGRAL Gamma-Ray (IGR) J16426+6536 and IGR J22292+6647 are Type 1 Seyfert active galactic nuclei (with IGR J16426+6536 further classified as a Seyfert 1.5) which have redshifts of z = 0.323 and z = 0.113, respectively. IGR J18308-1232 is identified as a cataclysmic variable (CV), and we confirm a previous identification of IGR J19267+1325 as a magnetic CV. IGR J18214-1318 is identified as an obscured high-mass X-ray binary (HMXB), which are systems thought to have a compact object embedded in the stellar wind of a massive star. We combine Chandra fluxes with distances based on the optical observations to calculate X-ray luminosities of the HMXB and CVs, finding L 0.3-10keV = 5 x 10 36 erg s -1 for IGR J18214-1318, L 0.3-10keV = 1.3 x 10 32 erg s -1 for IGR J18308-1232, and L 0.3-10keV = 6.7 x 10 32 erg s -1 for IGR J19267+1325.

  13. Study of the spectral width of intermode beats and optical spectrum of an actively mode-locked three-mirror semiconductor laser

    Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M; Kuznetsov, Sergei A; Pivtsov, V S

    2005-01-01

    Various oscillation regimes of an actively mode-locked semiconductor laser are studied experimentally. Two types of regimes are found in which the minimal spectral width (∼3.5 kHz) of intermode beats is achieved. The width of the optical spectrum of modes is studied as a function of their locking and the feedback coefficients. The maximum width of the spectrum is ∼3.7 THz. (control of laser radiation parameters)

  14. Turnable Semiconductor Laser Spectroscopy in Hollow Optical Waveguides, Phase II SBIR

    Gregory J. Fetzer, Ph.D.

    2001-12-24

    In this study a novel optical trace gas sensor based on a perforated hollow waveguide (PHW) was proposed. The sensor has been given the acronym ESHOW for Environmental Sensor using Hollow Optical Waveguides. Realizations of the sensor have demonstrated rapid response time (<2s), low minimum detection limits (typically around 3 x 10-5 absorbance). Operation of the PHW technology has been demonstrated in the near-infrared (NIR) and mid0infrared (MIR) regions of the spectrum. Simulation of sensor performance provided in depth understanding of the signals and signal processing required to provide high sensitivity yet retain rapid response to gas changes. A dedicated sensor electronics and software foundation were developed during the course of the Phase II effort. Commercial applications of the sensor are ambient air and continuous emissions monitoring, industrial process control and hazardous waste site monitoring. There are numerous other applications for such a sensor including medical diagnosis and treatment, breath analysis for legal purposes, water quality assessment, combustion diagnostics, and chemical process control. The successful completion of Phase II resulted in additional funding of instrument development by the Nations Institute of Heath through a Phase I SBIR grant and a strategic teaming relationship with a commercial manufacture of medical instrumentation. The purpose of the NIH grant and teaming relationship is to further develop the sensor to monitor NO in exhaled breath for the purposes of asthma diagnosis.

  15. Optical and electrical characterization of high resistivity semiconductors for constant-bias microbolometer devices

    Saint John, David B.

    The commercial market for uncooled infrared imaging devices has expanded in the last several decades, following the declassification of pulse-biased microbolometer-based focal plane arrays (FPAs) using vanadium oxide as the sensing material. In addition to uncooled imaging platforms based on vanadium oxide, several constant-bias microbolometer FPAs have been developed using doped hydrogenated amorphous silicon (a-Si:H) as the active sensing material. While a-Si:H and the broader Si1-xGex:H system have been studied within the context of photovoltaic (PV) devices, only recently have these materials been studied with the purpose of qualifying and optimizing them for potential use in microbolometer applications, which demand thinner films deposited onto substrates different than those used in PV. The behavior of Ge:H is of particular interest for microbolometers due to its intrinsically low resistivity without the introduction of dopants, which alter the growth behavior and frustrate any attempt to address the merits of protocrystalline a-Ge:H. This work reports the optical, microstructural, and electrical characterization and qualification of a variety of Si:H, Si1-xGex:H, and Ge:H films deposited using a plasma enhanced chemical vapor deposition (PECVD) process, including a-Ge:H films which exhibit high TCR (4-6 -%/K) and low 1/f noise at resistivities of interest for microbolometers (4000 -- 6000 O cm). Thin film deposition has been performed simultaneously with real-time optical characterization of the growth evolution dynamics, providing measurement of optical properties and surface roughness evolutions relevant to controlling the growth process for deliberate variations in film microstructure. Infrared spectroscopic ellipsometry has been used to characterize the Si-H and Ge-H absorption modes allowing assessment of the hydrogen content and local bonding behavior in thinner films than measured traditionally. This method allows IR absorption analysis of hydrogen

  16. Electrostatically self-assembled films containing II-VI semiconductor nanoparticles: Optical and electrical properties

    Suryajaya; Nabok, A.V.; Tsargorodskaya, A.; Hassan, A.K.; Davis, F.

    2008-01-01

    CdS and ZnS semiconducting colloid nanoparticles were deposited as thin films using the technique of electrostatic self-assembly. The process of alternative deposition of Poly-allylamine Hydrochloride (PAH) and CdS (or ZnS) layers were monitored with a novel optical method of total internal reflection ellipsometry (TIRE). The fitting of TIRE spectra allowed the evaluation of the parameter (thickness, refractive index and extinction coefficients) of all consecutively deposited layers. I-V characteristics of the films obtained were studied in sandwich structures on Indium Tin Oxide (ITO) conductive electrodes using the mercury probe technique. The presence of CdS (or ZnS) nanoparticles in the polyelectrolyte films leads to a switching behaviour, which may be attributed to the resonance electron tunneling via semiconducting nanoparticles

  17. Packaging-induced failure of semiconductor lasers and optical telecommunications components

    Sharps, J.A. [Corning Inc., NY (United States)

    1996-12-31

    Telecommunications equipment for field deployment generally have specified lifetimes of > 100,000 hr. To achieve this high reliability, it is common practice to package sensitive components in hermetic, inert gas environments. The intent is to protect components from particulate and organic contamination, oxidation, and moisture. However, for high power density 980 nm diode lasers used in optical amplifiers, the authors found that hermetic, inert gas packaging induced a failure mode not observed in similar, unpackaged lasers. They refer to this failure mode as packaging-induced failure, or PIF. PIF is caused by nanomole amounts of organic contamination which interact with high intensity 980 nm light to form solid deposits over the emitting regions of the lasers. These deposits absorb 980 nm light, causing heating of the laser, narrowing of the band gap, and eventual thermal runaway. The authors have found PIF is averted by packaging with free O{sub 2} and/or a getter material that sequesters organics.

  18. Optical fingerprints of Y2 ordering in III–V ternary semiconductor alloys

    Chen, Dongguo; Ravindra, N M

    2013-01-01

    In this paper, we report the Y2 ordering induced changes in the crystal field splitting, spin–orbit splitting and band gap for Al x Ga 1−x As, Ga x In 1−x As, Ga x In 1−x P, GaAs x Sb 1−x and InP x Sb 1−x using first-principles calculations. These values and the valence band splittings E 12 , E 13 for these materials are provided as a function of the ordering parameter η. The trends of these properties among materials are explained. The optical fingerprints of Y2 ordering are then compared with those of other available structures and the experimental data. (paper)

  19. Time-resolved optical studies of wide-gap II-VI semiconductor heterostructures

    Wang, Hong

    ZnSe and ZnSe-based quantum well and superlattice structures are potential candidates for light emitting devices and other optical devices such as switches and modulators working in the blue-green wavelength range. Carrier dynamics studies of these structures are important in evaluating device performance as well as understanding the underlying physical processes. In this thesis, a carrier dynamics investigation is conducted for temperature from 77K to 295K on CdZnSSe/ZnSSe single quantum well structure (SQW) and ZnSe/ZnSTe superlattice fabricated by molecular beam epitaxy (MBE). Two experimental techniques with femtosecond time resolution are used in this work: up-conversion technique for time- resolved photoluminescence (PL) and pump-probe technique for time-resolved differential absorption studies. For both heterostructures, the radiative recombination is dominated by exciton transition due to the large exciton binding energy as a result of quantum confinement effect. The measured decay time of free exciton PL in CdZnSSe/ZnSSe SQW increases linearly with increasing temperature which agrees with the theoretical prediction by considering the conservation of momentum requirement for radiative recombination. However, the recombination of free carriers is also observed in CdZnSSe/ZnSSe SQW for the whole temperature range studied. On the other hand, in ZnSe/ZnSTe superlattice structures, the non- radiative recombination processes are non-negligible even at 77K and become more important in higher temperature range. The relaxation processes such as spectral hole burning, carrier thermalization and hot-carrier cooling are observed in ZnSe/ZnSTe superlattices at room temperature (295K) by the femtosecond pump-probe measurements. A rapid cooling of the thermalized hot- carrier from 763K to 450K within 4ps is deduced. A large optical nonlinearity (i.e., the induced absorption change) around the heavy-hole exciton energy is also obtained.

  20. Quantum-tomographic cryptography with a semiconductor single-photon source

    Kaszlikowski, D.; Yang, L.J.; Yong, L.S.; Willeboordse, F.H.; Kwek, L.C.

    2005-01-01

    We analyze the security of so-called quantum-tomographic cryptography with the source producing entangled photons via an experimental scheme proposed by Fattal et al. [Phys. Rev. Lett. 92, 37903 (2004)]. We determine the range of the experimental parameters for which the protocol is secure against the most general incoherent attacks

  1. Stabilization in laser wavelength semiconductor with fiber optical amplifier application doped with erbium

    Camas, J.; Anzueto, G.; Mendoza, S.; Hernandez, H.; Garcia, C.; Vazquez, R.

    2009-01-01

    In this work, we present a novel electronic design of a DC source, which automatically controls the temperature of a tunable laser. The temperature change in the laser is carried out by the control of DC that circulates through a cooling stage where the laser is set. The laser can be tuned in a wavelength around 1550 nm. Its application is in Erbium Doped Fiber Amplifier (EDFA) in reflective configuration. (Author)

  2. All-optical header recognizer for optical packet switched networks : exploiting nonlinear gain and index dynamics in semiconductor optical amplifiers for low power operation and photonic integration device

    Calabretta, N.; Dorren, H.J.S.

    2009-01-01

    The increase of the internet traffic leads to future optical networks requiring tens of Tb/s of capacity. Current electronic circuit switches are limited by the scalability of the electronic switching fabrics, power consumption and dissipation in the opto- electronic conversion. All-optical packet

  3. Optic axis determination by fibre-based polarization-sensitive swept-source optical coherence tomography

    Lu Zenghai; Kasaragod, Deepa K; Matcher, Stephen J, E-mail: z.lu@sheffield.ac.uk, E-mail: s.j.matcher@sheffield.ac.uk [Department of Materials Science and Engineering, Kroto Research Institute, University of Sheffield, North Campus, Broad Lane, Sheffield, S3 7HQ (United Kingdom)

    2011-02-21

    We describe a fibre-based variable-incidence angle (VIA) polarization-sensitive swept-source optical coherence tomography (PS-SS-OCT) system to determine the 3D optical axis of birefringent biological tissues. Single-plane VIA-PS-OCT is also explored which requires measurement of the absolute fast-axis orientation. A state-of-the-art PS-SS-OCT system with some improvements both in hardware and software was used to determine the apparent optical birefringence of equine tendon for a number of different illumination directions. Polar and azimuthal angles of cut equine tendon were produced by the VIA method and compared with the nominal values. A quarter waveplate (QWP) and equine tendon were used as test targets to validate the fast-axis measurements using the system. Polar and azimuthal angles of cut equine tendon broadly agreed with the expected values within about 8% of the nominal values. A theoretical and experimental analysis of the effect of the sample arm fibre on determination of optical axis orientation using a proposed definition based on the orientation of the eigenpolarization ellipse experimentally confirms that this algorithm only works correctly for special settings of the sample arm fibre. A proposed algorithm based on the angle between Stokes vectors on the Poincare sphere is confirmed to work for all settings of the sample arm fibre. A calibration procedure is proposed to remove the sign ambiguity of the measured orientation and was confirmed experimentally by using the QWP.

  4. Optic axis determination by fibre-based polarization-sensitive swept-source optical coherence tomography

    Lu Zenghai; Kasaragod, Deepa K; Matcher, Stephen J

    2011-01-01

    We describe a fibre-based variable-incidence angle (VIA) polarization-sensitive swept-source optical coherence tomography (PS-SS-OCT) system to determine the 3D optical axis of birefringent biological tissues. Single-plane VIA-PS-OCT is also explored which requires measurement of the absolute fast-axis orientation. A state-of-the-art PS-SS-OCT system with some improvements both in hardware and software was used to determine the apparent optical birefringence of equine tendon for a number of different illumination directions. Polar and azimuthal angles of cut equine tendon were produced by the VIA method and compared with the nominal values. A quarter waveplate (QWP) and equine tendon were used as test targets to validate the fast-axis measurements using the system. Polar and azimuthal angles of cut equine tendon broadly agreed with the expected values within about 8% of the nominal values. A theoretical and experimental analysis of the effect of the sample arm fibre on determination of optical axis orientation using a proposed definition based on the orientation of the eigenpolarization ellipse experimentally confirms that this algorithm only works correctly for special settings of the sample arm fibre. A proposed algorithm based on the angle between Stokes vectors on the Poincare sphere is confirmed to work for all settings of the sample arm fibre. A calibration procedure is proposed to remove the sign ambiguity of the measured orientation and was confirmed experimentally by using the QWP.

  5. Comparative Analysis of Semiconductor Power Losses of Galvanically Isolated Quasi-Z-Source and Full-Bridge Boost DC-DC Converters

    Kosenko Roman

    2015-07-01

    Full Text Available This paper compares semiconductor losses of the galvanically isolated quasi-Z-source converter and full-bridge boost DC-DC converter with active clamping circuit. Operation principle of both converters is described. Short design guidelines are provided as well. Results of steady state analysis are used to calculate semiconductor power losses for both converters. Analytical expressions are derived for all types of semiconductor power losses present in these converters. The theoretical results were verified by means of numerical simulation performed in the PSIM simulation software. Its add-on module “Thermal module” was used to estimate semiconductor power losses using the datasheet parameters of the selected semiconductor devices. Results of calculations and simulation study were obtained for four operating points with different input voltage and constant input current to compare performance of the converters in renewable applications, like photovoltaic, where input voltage and power can vary significantly. Power loss breakdown is detailed and its dependence on the converter output power is analyzed. Recommendations are given for the use of the converter topologies in applications with low input voltage and relatively high input current.

  6. Optical investigations on the wide bandgap semiconductors diamond and aluminum nitride

    Teofilov, Nikolai

    2007-07-01

    In the context of this thesis, new results about optical defects and intrinsic properties of diamond, AlN and AlGaN alloys have been obtained. The main experimental techniques used were low temperature cathodoluminescence and photoluminescence spectroscopy. First, different aspects of intentional and background doping of diamond were discussed. Thus, the most commonly observed green luminescence emission from boron doped HPHT diamonds has been studied by means of temperature dependent CL in a wide temperature range from 10 K to 450 K. One further subject, addressing deep defect nitrogen related luminescence was a study of nitrogen addition in combustion flame grown CVD diamond layers. Two further topics concern intrinsic excitations in diamond, free excitons and electron-hole drops. Several important parameters like the critical density, the critical temperature, and the low-temperature density inside the drops were evaluated. The ground state density of the electron-hole condensate in diamond is about {approx} 42 times larger than that in Si, and the critical temperature takes very high values in the range of 165K.. 173K. Cathodoluminescence investigations on epitaxial wurtzite AlN layers grown on sapphire, SiC, and Si substrates, have shown that although the material is generally of good optical quality, deep level luminescence are still dominating the spectra. Relatively sharp near-band-edge transitions have been observed in all three samples that exhibit significantly reduced line widths for the AlN/sapphire and the AlN/SiC samples. Much broader emission lines in the near band-gap region have been observed for the first time from the AlN sample grown on Si (111) substrate. Temperature dependent CL measurements and numerical line decompositions reveal complicated substructures in the excitonic lines. The temperature dependence of the energy positions and broadening parameters of the transition have been studied and compared with the other materials. Epitaxial Al

  7. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R.P.

    2016-01-01

    Highlights: • Cu_1_−_xCo_xS nanoparticles were synthesized via chemical co-precipitation method. • Structural, band gap, magnetization and photocatalysis studies were carried out. • All the doped samples exhibited intrinsic room temperature ferromagnetism. • Effect of magnetic properties on photocatalytic activity was analyzed. • CuS:Co nanoparticles may find applications in photocatalytic and spintronic devices. - Abstract: Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV–vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  8. Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

    Laucht, Arne; Villas-Boas, Jose M.; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

    2010-07-01

    We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nanocavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nanocavity mode. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced.

  9. Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

    Villas-Boas, Jose M. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica; Laucht, Arne; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Technische Universitaet Muenchen, Garching (Germany). Walter Schottky Inst.

    2011-07-01

    Full text. We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nano cavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nano cavity mode. Photoluminescence measurements show a characteristic triple peak during the double anti crossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced

  10. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    Sreelekha, N.; Subramanyam, K. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Department of Physics, Raghu Engineering College, Visakhapatnam, Andrapradesh 531162 (India); Amaranatha Reddy, D. [Department of Chemistry and Chemical Institute for Functional Materials, Pusan National University, Busan 609735 (Korea, Republic of); Murali, G. [Department of BIN Fusion Technology & Department of Polymer-Nano Science and Technology, Chonbuk National University, Jeonju, Jeonbuk (Korea, Republic of); Ramu, S. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Rahul Varma, K. [Department of Mechanical Engineering, University of California, Berkeley (United States); Vijayalakshmi, R.P., E-mail: vijayaraguru@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India)

    2016-08-15

    Highlights: • Cu{sub 1−x}Co{sub x}S nanoparticles were synthesized via chemical co-precipitation method. • Structural, band gap, magnetization and photocatalysis studies were carried out. • All the doped samples exhibited intrinsic room temperature ferromagnetism. • Effect of magnetic properties on photocatalytic activity was analyzed. • CuS:Co nanoparticles may find applications in photocatalytic and spintronic devices. - Abstract: Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV–vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  11. Investigation of proton damage in III-V semiconductors by optical spectroscopy

    Yaccuzzi, E.; Giudici, P. [Departamento Energía Solar, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Khachadorian, S.; Strittmatter, A.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Suárez, S. [Laboratorio de Colisiones Atómicas, Centro Atómico Bariloche, E. Bustillo 9500, 8400 Bariloche (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Reinoso, M. [Departamento Física Experimental, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Goñi, A. R. [ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra (Spain)

    2016-06-21

    We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase in the intensity of longitudinal optical phonons and a decrease in the luminescence were observed. We associate these changes with the creation of defects in the damaged region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with stopping and range of ions in matter simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20% for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation, we propose an increase in 40% in the electronic stopping power for InGaP.

  12. Assessing embryo development using swept source optical coherence tomography

    Caujolle, S.; Cernat, R.; Silvestri, G.; Marques, M. J.; Bradu, A.; Feuchter, T.; Robinson, G.; Griffin, D.; Podoleanu, A.

    2018-03-01

    A detailed assessment of embryo development would assist biologists with selecting the most suitable embryos for transfer leading to higher pregnancy rates. Currently, only low resolution microscopy is employed to perform this assessment. Although this method delivers some information on the embryo surface morphology, no specific details are shown related to its inner structure. Using a Master-Slave Swept-Source Optical Coherence Tomography (SS-OCT), images of bovine embryos from day 7 after fertilization were collected from different depths. The dynamic changes inside the embryos were examined, in detail and in real-time from several depths. To prove our ability to characterize the morphology, a single embryo was imaged over 26 hours. The embryo was deprived of its life support environment, leading to its death. Over this period, clear morphological changes were observed.

  13. Optics of relativistic sources in a spherically symmetric gravitational field

    Campbell, G.A.

    1975-01-01

    The effects of spectral shifts and gravitational focussing on radiation from sources moving geodesically in the Schwarzschild gravitational field is analyzed using the general-relativistic equations for geodesic motion and for the propagation of radiation along null geodesics in the geometrical optics approximation. The exact solutions of the Schwarzschild geodesic equations are briefly discussed for the null and time-like cases, and the method of classifying the orbital types of motion based on the effective radial potential is presented. A method of finding the stability of these orbits using this technique is discussed. The geometrical optics approximation for the propagation of radiation is discussed, and the area-intensity law for the Schwarzschild field is derived. The particularly interesting region near R = 3m is investigated by means of expansions of the exact equations. Numerical techniques for calculating radiation patterns from the propagation equations are discussed, including techniques for obtaining the time variation along geodesics and differences in propagation time along different null geodesics. Finally, the implications of these calculations for the apparent contradiction in energy requirements set by Joseph Weber's observations of galactic gravitational radiation and by astronomical observation are discussed. (Diss. Abstr. Int., B)

  14. Pure sources and efficient detectors for optical quantum information processing

    Zielnicki, Kevin

    Over the last sixty years, classical information theory has revolutionized the understanding of the nature of information, and how it can be quantified and manipulated. Quantum information processing extends these lessons to quantum systems, where the properties of intrinsic uncertainty and entanglement fundamentally defy classical explanation. This growing field has many potential applications, including computing, cryptography, communication, and metrology. As inherently mobile quantum particles, photons are likely to play an important role in any mature large-scale quantum information processing system. However, the available methods for producing and detecting complex multi-photon states place practical limits on the feasibility of sophisticated optical quantum information processing experiments. In a typical quantum information protocol, a source first produces an interesting or useful quantum state (or set of states), perhaps involving superposition or entanglement. Then, some manipulations are performed on this state, perhaps involving quantum logic gates which further manipulate or entangle the intial state. Finally, the state must be detected, obtaining some desired measurement result, e.g., for secure communication or computationally efficient factoring. The work presented here concerns the first and last stages of this process as they relate to photons: sources and detectors. Our work on sources is based on the need for optimized non-classical states of light delivered at high rates, particularly of single photons in a pure quantum state. We seek to better understand the properties of spontaneous parameteric downconversion (SPDC) sources of photon pairs, and in doing so, produce such an optimized source. We report an SPDC source which produces pure heralded single photons with little or no spectral filtering, allowing a significant rate enhancement. Our work on detectors is based on the need to reliably measure single-photon states. We have focused on

  15. Optical properties of aluminium-gallium-nitride semiconductors; Optische Eigenschaften von Aluminium-Galliumnitrid-Halbleitern

    Roeppischer, Marcus

    2011-08-17

    In this work fundamental optical properties of AlN, GaN and their alloys are presented. Spectroscopic ellipsometry from the near infrared (NIR) to the vacuum-ultraviolet (VUV) spectral region was the main tool to investigate these properties. The complete dielectric function (DF) of cubic as well as hexagonal GaN and AlN in the range between 0.6 eV and 20 eV is shown here, for the first time. A layer model including surface roughness and buffer layers was used to separate the DF of the investigated layer from the measured pseudo-DF. Afterwards all absorption structures in the DF's are discussed in detail. Due to the comparison with calculated bandstructures these absorption structures could be connected to interband transitions at high symmetry points in the Brillouin zone (BZ). Within this analysis similarities and differences between GaN and AlN are discussed. For zincblende (zb) AlN a pronounced absorption tail below the direct band gap transition was detected. This behaviour is typical for a phonon-assisted indirect absorption. In contrast zb-GaN exhibits a clear direct absorption. Furthermore, a change in the energetic position of the two main interband absorptions E1 and E2 at the L- and X-point of the BZ was found. A detailed analysis of the anisotropic fundamental band gap of hexagonal AlN offers a interchange of the two topmost valance bands at the BZ center compared to GaN. Due to this permutation the fundamental band edge of wurtzit (wz) AlN is only visible for parallel polarized light, while for GaN it can be detect in the perpendicular configuration. By analysing the energetic position of the three excitonic transitions the crystal-field- and spin-orbit-splitting were defined to be {delta}{sub cr}=-226 meV and {delta}{sub so}=14 meV. In addition, the energetic positions for these transitions at T=15 K are 6.0465 eV, 6.2694 eV and 6.2775 eV. The comparison between measurements at room and low temperature shows an energetic shift for both absorption

  16. Optical and Temporal Carrier Dynamics Investigations of III-Nitrides for Semiconductor Lighting

    Ajia, Idris A.

    2018-01-01

    In the first part of this dissertation, the effects of some important types of crystal defects present in III-nitride structures are investigated. Here, two types of defects are studied in two different III-nitride-based light emitting structures. The first defects of interest are V-pit defects in InGaN/GaN multiple quantum well (MQW) blue LEDs, where their contribution to the high-efficiency of such LEDs is discussed. In addition, the effect of these defects on the efficiency droop phenomenon in these LEDs is elucidated. Secondly, the optical effects of grain boundary defects in AlN-rich AlGaN/AlGaN MQWs is studied. In this study, it is shown that grain boundary defects may result in abnormal carrier localization behavior in these deep ultraviolet (UV) structures. While both defects are treated individually, it is evident from these studies that threading dislocation (TD) defects are an underlying contributor to the more undesirable outcomes of the said defects. In the second part, the dissertation reports on the carrier dynamics of III-nitride LED structures grown on emerging substrates—as possible efficiency enhancing techniques—aimed at mitigating the effects of TD defects. Thus, the carrier dynamics of GaN/AlGaN UV MQWs grown, for the first time, on (2̅01) – oriented β-Ga2O3 is studied. It is shown to be a candidate substrate for highly efficient vertical UV devices. Finally, results from the carrier dynamics investigation of an AlGaN/AlGaN MQW LED structure homoepitaxially grown on AlN substrate are discussed, where it is shown that its high-efficiency is sustained at high temperatures through the thermal redistribution of carriers to highly efficient recombination sites.

  17. Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths

    Cernansky, Robert; Martini, Francesco; Politi, Alberto

    2018-02-01

    We demonstrate on chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible PECVD Silicon Nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high quality Q-factor of 320,000 resulting in a generation rate of 950,000 $\\frac{pairs}{mW}$. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.

  18. Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices

    Schwager, Heike

    2012-07-04

    In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with

  19. Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices

    Schwager, Heike

    2012-01-01

    In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with

  20. Structural, optical and morphological studies of Cd2+ doping in CH3NH3PbI3 perovskite semiconductor at Pb2+ site for photovoltaic applications

    Parrey, Khursheed; Warish, Mohd.; Devi, Nisha; Niazi, A.; Aziz, A.; Ansari, S. G.

    2018-05-01

    Doping of semiconductors in a controlled mannner have paramount technological importance as far as the optical and electronic properties of the devices are concerned. Hybrid organic-inorganic perovskites (HOPs) as intrinsic semiconductors have sensational properties required for both the solar photovoltaics and perovskite light emitting diodes. However, undoped and complexity in the dpoing process of HOPs have limited their exploitation in the field of elcronics. In this papper we present the synthesis of HOP semiconductor (CH3NH3PbI3) doped in Pb2+ position by Cd2+. We studied the effect of the incorporation of Cd2+ into the crystalline structure and analysed the changes in the properties like crystal structure, optical absorption and the surface morphology. The structure of HOPs confirmed by X-ray diffraction analysis is tetragonal perovskite type. It can be found that the crystallinity of the samples was enhanced with the doping concentration as the intensity of diffraction peaks were observed to increase with doping. The absorption spectra as obtained from UV-Visible spectrophotometry and Tauc plot analysis indicated that the band gap observed (1.73 eV) is direct type and gets reduced to 1.67 eV with the doping concentration. The red shift may be due to the increase in the size of nanocrystalline material with doping.

  1. Optical conductivity calculation of a k.p model semiconductor GaAs incorporating first-order electron-hole vertex correction

    Nurhuda, Maryam; Aziz Majidi, Muhammad

    2018-04-01

    The role of excitons in semiconducting materials carries potential applications. Experimental results show that excitonic signals also appear in optical absorption spectra of semiconductor system with narrow gap, such as Gallium Arsenide (GaAs). While on the theoretical side, calculation of optical spectra based purely on Density Functional Theory (DFT) without taking electron-hole (e-h) interactions into account does not lead to the appearance of any excitonic signal. Meanwhile, existing DFT-based algorithms that include a full vertex correction through Bethe-Salpeter equation may reveal an excitonic signal, but the algorithm has not provided a way to analyze the excitonic signal further. Motivated to provide a way to isolate the excitonic effect in the optical response theoretically, we develop a method of calculation for the optical conductivity of a narrow band-gap semiconductor GaAs within the 8-band k.p model that includes electron-hole interactions through first-order electron-hole vertex correction. Our calculation confirms that the first-order e-h vertex correction reveals excitonic signal around 1.5 eV (the band gap edge), consistent with the experimental data.

  2. Statistical properties of intensity of partially polarised semiconductor laser light backscattered by a single-mode optical fibre

    Alekseev, A E; Potapov, V T; Gorshkov, B G

    2015-01-01

    We report the results of studying statistical properties of the intensity of partially polarised coherent light backscattered by a single mode optical fibre. An expression is derived for the deviation of the backscattered light intensity depending on the scattering region length, the degree of the light source coherence and the degree of scattered light polarisation. It is shown that the backscattered light in a fibre scattered-light interferometer is partially polarised with the polarisation degree P = 1/3 in the case of external perturbations of the interferometer fibre. (scattering of light)

  3. Centralized light-source optical access network based on polarization multiplexing.

    Grassi, Fulvio; Mora, José; Ortega, Beatriz; Capmany, José

    2010-03-01

    This paper presents and demonstrates a centralized light source optical access network based on optical polarization multiplexing technique. By using two optical sources emitting light orthogonally polarized in the Central Node for downstream and upstream operations, the Remote Node is kept source-free. EVM values below telecommunication standard requirements have been measured experimentally when bidirectional digital signals have been transmitted over 10 km of SMF employing subcarrier multiplexing technique in the electrical domain.

  4. Coherent dynamics in semiconductors

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  5. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...

  6. 1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

    Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

    2000-01-01

    We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

  7. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Podoskin, A. A., E-mail: podoskin@mail.ioffe.ru; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  8. Fundamentals of semiconductors physics and materials properties

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  9. Spin physics in semiconductors

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  10. Physics of semiconductor lasers

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  11. Swept-Source Optical Coherence Tomographic Findings of Choroidal Osteoma

    Yuki Hayashi

    2014-07-01

    Full Text Available Purpose: To report the morphologic features of a choroidal osteoma using swept-source optical coherence tomography (SS-OCT and fundus autofluorescence (FAF. Methods: Two eyes of two cases with a choroidal osteoma were studied using SS-OCT and FAF. Results: The location of the tumor was circumpapillary without macular involvement in case 1 and juxtapapillary with macular involvement in case 2. Both cases had a mixture of calcified and decalcified areas, and a concomitant choroidal neovascularization was found in case 2. The FAF images showed decreased autofluorescence in the central decalcified regions and relatively preserved fluorescence in marginal calcified regions in both cases. SS-OCT revealed a normal inner retina and an abnormal outer retina in both cases, and subretinal fluid in case 2. The calcified regions appeared sponge-like and were multilayered in case 2. A lamellar reflective pattern was observed in the decalcified regions in case 1, and hyperreflective mound-like areas were observed in both cases. SS-OCT demonstrated hyperreflective areas above Bruch's membrane accompanied by disruption of Bruch's membrane in case 1. The chorioscleral border was visible in both cases. Conclusions: The FAF pattern in the calcified and decalcified areas of the choroidal osteoma may correspond to the different stage of tumor evolution. The SS-OCT findings indicate that choroidal osteomas can have characteristic reflective patterns and alterations of the overlying retina.

  12. Inter-subband optical absorption in an inversion layer on a semiconductor surface in tilted magnetic fields. Progress report, July 1, 1980-June 30, 1981

    O'Connell, R.F.

    1981-01-01

    Cyclotron-resonance experiments on inversion layer electrons in Si (001) metal-oxide-semiconductor field-effect transistors (MOSFET's) have produced many surprising and unexplained results. This has motivated the investigation of the use of other magneto-optical phenomena in MOS systems. Emphasis has been on the Faraday rotation effect. The conditions necessary for achieving a null Faraday rotation, as well as a null ellipticity have been examined. The calculation of theta for the Appel-Overhauser model for the surface space-charge layer in Si has also been studied

  13. Optically pumped polarized 23Na vapor target for use in polarized ion source. Technical progress report

    Anderson, L.W.

    1984-01-01

    We are currently measuring relaxation times in an optically pumped 23 Na vapor target. Our research is directed toward improvements in the optically pumped Na vapor targets used for the production of polarized H - ions. In this progress report we review the properties of the optically pumped polarized H - ion source and especially the optically pumped Na vapor target employed in this source as well as discussing the progress of our research on relaxation times in an optically pumped Na vapor target. 30 references, 6 figures, 3 tables

  14. Chiral Topological Orders in an Optical Raman Lattice (Open Source)

    2016-03-01

    PAPER • OPEN ACCESS Chiral topological orders in an optical Raman lattice To cite this article: Xiong-Jun Liu et al 2016 New J. Phys. 18...... chiral spin liquid Abstract Wefind an optical Raman lattice without spin-orbit coupling showing chiral topological orders for cold atoms. Two

  15. Semiconductor lasers stability, instability and chaos

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  16. Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

    Malic, Ermin

    2008-01-01

    This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-Γ and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

  17. Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

    Malic, Ermin

    2008-09-02

    This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-{gamma} and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

  18. Compound Semiconductor Radiation Detectors

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  19. Fire Source Localization Based on Distributed Temperature Sensing by a Dual-Line Optical Fiber System.

    Sun, Miao; Tang, Yuquan; Yang, Shuang; Li, Jun; Sigrist, Markus W; Dong, Fengzhong

    2016-06-06

    We propose a method for localizing a fire source using an optical fiber distributed temperature sensor system. A section of two parallel optical fibers employed as the sensing element is installed near the ceiling of a closed room in which the fire source is located. By measuring the temperature of hot air flows, the problem of three-dimensional fire source localization is transformed to two dimensions. The method of the source location is verified with experiments using burning alcohol as fire source, and it is demonstrated that the method represents a robust and reliable technique for localizing a fire source also for long sensing ranges.

  20. Fire Source Localization Based on Distributed Temperature Sensing by a Dual-Line Optical Fiber System

    Miao Sun

    2016-06-01

    Full Text Available We propose a method for localizing a fire source using an optical fiber distributed temperature sensor system. A section of two parallel optical fibers employed as the sensing element is installed near the ceiling of a closed room in which the fire source is located. By measuring the temperature of hot air flows, the problem of three-dimensional fire source localization is transformed to two dimensions. The method of the source location is verified with experiments using burning alcohol as fire source, and it is demonstrated that the method represents a robust and reliable technique for localizing a fire source also for long sensing ranges.