WorldWideScience

Sample records for opciones si tiene

  1. «Si una mujer tiene la cabeza grande»: fisionomía y carácter femenino en un texto asiriobabilónico

    OpenAIRE

    Couto Ferreira, Érica

    2008-01-01

    El cuerpo humano en Mesopotamia era entendido como objeto adivinatorio: un sistema de signos, portador de mensajes sobre el propio individuo, cuyo significado debía decodificarse mediante la observación y la interpretación. Tomando como fuente principal de mi trabajo la serie fisionómica Šumma sinništu qaqqada rabât («Si una mujer tiene la cabeza grande»), analizo, por una parte, los mecanismos por los que se promueve una determinada visión de las mujeres en la adivinación fisionómica a parti...

  2. TIEN VAN DO

    Indian Academy of Sciences (India)

    Home; Journals; Sadhana. TIEN VAN DO. Articles written in Sadhana. Volume 41 Issue 8 August 2016 pp 817-823. A closed-form solution for a two-server heterogeneous retrial queue with threshold policy · TIEN VAN DO DENES PAPP RAM CHAKKA JINTING WANG JANOS SZTRIK · More Details Abstract Fulltext PDF.

  3. Valuación de opciones de tipo de cambio asumiendo distribuciones a-estables

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    Román Rodríguez Aguilar

    2013-01-01

    Full Text Available Este trabajo tiene por objetivo presentar la valuación de opciones europeas a través del método probabilista utilizando distribuciones α-estables como una alternativa de valuación de opciones en el mercado mexicano. El uso de estas distribuciones para la modelación de series financieras permite superar la principal debilidad de la valuación clásica que supone normalidad al captar los efectos de las colas pesadas y la asimetría propias de las series financieras. Uno de los principales resultados que se encontró se refiere a los diferenciales en la valuación de opciones entre ambos modelos y el efecto de los parámetros de la distribución en los precios; para mostrar esta diferencia, se realiza la valuación de una opción de compra y una opción de venta sobre el tipo de cambio peso-dólar. De igual forma se calcularon las medidas de sensibilidad básicas de las opciones (delta, gama y rho y se analizó el efecto del parámetro de estabilidad α en la volatilidad implícita de las opciones al asumir la valuación α-estable como el precio de mercado.

  4. Reseña de: Caselli, Elisa, Antijudaïsme, pouvoir politique et administration de la justice. Juifs, chrétiens et converts dans l’ espace jurisdictionnel de la Chancillería de Valladolid (XVe-XVIe siècles.Villeneuve d’Ascq...

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    Enrique Cantera Montenegro

    2017-05-01

    Full Text Available Caselli, Elisa, Antijudaïsme, pouvoir politique et administration de la justice. Juifs, chrétiens et converts dans l’ espace jurisdictionnel de la Chancillería de Valladolid (XVe-XVIe siècles. Villeneuve d’Ascq Cedex. Atelier National de Reproduction des Thèses, 2016. 396 págs. isbn: 978-2-7295-8891-5.

  5. Milpa y capitalismo: opciones para los campesinos mayas yucatecos contemporáneos

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    Manuel Martín Castillo

    2016-07-01

    Full Text Available La mayoría de los mayas yucatecos contemporáneos vive en la pobreza. El eje de su economía y cultura es la agricultura de milpa, que los jóvenes no encuentran atractiva como opción económica. La teoría económica convencional explica la pobreza por la escasez de capital, el uso de tecnologías obsoletas y la baja productividad. Aunque se concibe como un sistema productivo arcaico, la milpa tiene características para explorar opciones de vinculación entre las economías campesina y capitalista, para mejorar las condiciones de vida de los campesinos y contribuir al desarrollo de su cultura en el actual contexto de globalización económica.

  6. Valuación financiera de proyectos de inversión en nuevas tecnologías con opciones reales

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    Francisco Antonio Álvarez Echeverría

    2012-01-01

    Full Text Available La valuación financiera de proyectos de inversión que involucran nuevas tecnologías requiere de cierto grado de flexibilidad en la implementación de estrategias futuras de negocio como son la expansión, contracción, posposición y abandono del proyecto; asimismo, incorporar la creciente incertidumbre que presentan las nuevas tecnologías a través de tasas de descuento que tengan una dinámica estocástica y que pueden ser simuladas con diversos modelos de tasas de interés como el de Vasicek y CIR que permiten hacer escenarios alternos para evaluar un proyecto de inversión. En este trabajo se desarrolla y aplica la metodología de opciones reales para la adopción de una tecnología del tipo Wi-Fi; para ello se considera una opción real de expansión con el objeto de estimar los flujos de efectivo esperados, así como la rentabilidad del proyecto dentro de un intervalo de tiempo determinado en comparación con la técnica tradicional del valor presente neto (VPN. La tasa de descuento utilizada en la valuación se desprende de la estructura de plazos estimada mediante los modelos Vasicek (1977 y CIR (1985. Los resultados de la valuación reflejan que desde el tercer periodo los flujos de efectivo con opciones reales son positivos, mientras que el VPN lo hace hasta el séptimo periodo, situación que incrementa la probabilidad de tener un VPN negativo que rechace el proyecto, a pesar de que éste tiene viabilidad financiera, si incorporamos el valor de la flexibilidad en el proyecto, el cual no es cuantificado por las técnicas tradicional como el VPN; por lo tanto, se debe complementar el análisis incluyendo una opción real.

  7. EVALUACIÓN DEL MERCADO DE OPCIONES SOBRE TASAS DE CAMBIO: PERSPECTIVAS PARA UNA MEJOR UTILIZACIÓN

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    Iván Darío Ochoa

    2007-06-01

    Full Text Available Colombia debe contar con un mercado financiero acorde con las necesidades de la internacionaliza-ción de su economía. Para esto requiere desarrollar un mercado de derivados, y entre ellos el de opciones sobre la tasa de cambio peso/dólar, de modo que se aprovechen las ventajas de este instrumento, entre otros fines, para la cobertura del riesgo cambiario, cada vez más latente en un mundo globalizado. Las opciones financieras son poco conocidas en Colombia y sobre ellas se tiene muy poca información. Puesto que no hay un mercado organizado, se transan sólo en el mercado extrabursátil (OTC, el cual, si bien es cierto que implica mayor riesgo de contraparte, también permite el diseño de coberturas a la medida de las necesidades del cliente. Con la globalización de la economía y el paso a un régimen de tasa de cambio flotante, se han presentado apreciaciones del peso frente al dólar en los últimos años que alcanzan el 25%, lo que ha implicado grandes pérdidas para el sector exportador colombiano. Estos hechos deberían impulsar a quienes participan en el mercado externo, en cualquier modalidad, a desarrollar una cultura de gestión del riesgo cambiario para prevenir pérdidas futuras por exposición a la volatilidad de la tasa de cambio. No obstante, se evidencia que, por diversos motivos, no se ha dado un amplio desarrollo de esa cultura, y son precisamente esos motivos los que se investigaron con las mayores empresas exportadoras/importadoras del país y se analizan en este artículo. Las investigaciones sobre los aspectos mencionados complementadas con el estudio de las variables que afectan la valoración de las opciones en el mercado financiero permiten formular algunas conclusiones sobre las principales razones para que no exista una fuerte cultura de cobertura del riesgo cambiario, a pesar de que la amenaza de este riesgo es creciente, de por qué el mercado de las opciones sobre tasa de cambio es de tan poca profundidad hoy

  8. À propos du lexique juridique en ancien français avant le 13e siècle : la Règle de saint Benoît et le Perceval de Chrétien de Troyes

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    Schauwecker Yela

    2012-07-01

    Full Text Available La plus ancienne traduction de la {em Règle} de saint Benoît en franc{c}ais, rédigée en dialecte picard-wallon, date de la première moitié ou du milieu du {sc xii}$^{m e}$~siècle. On veut montrer que son auteur, pour qui le changement de langue, n'est pas le premier objectif s'efforce de transférer le texte de son milieu originel de l'Antiquité tardive dans le monde chevaleresque-féodal du {sc xii}$^{m e}$~siècle. Même sans nécessité apparente, quand il a eu à sa disposition l'équivalent du mot employé dans la {em Regula}, il substitue aux mots latins des termes juridiques et féodaux franc{c}ais. par Son texte, en tant que document de droit pour les moines, devient ainsi une source de vocabulaire juridique franc{c}ais avant le {sc xiii}$^{m e}$~siècle, c'est-à-dire dans un temps où les documents juridiques en langue vulgaire sont extrêmement rares. Cela est dû au fait que la justice, dans le Nord, fondée sur des coutumes, utilisait la langue vernaculaire à l'oral. La terminologie juridique franc{c}aise est bien enracinée dans la langue courante de l'époque~: leur insertion dans les Lais et les Chansons de geste en fait preuve. Mais cette terminologie est souvent méconnue par la lexicographie traditionnelle de l'ancien franc{c}ais, en raison des contextes littéraires et figurés. par

  9. Evaluación socioeconómica de proyectos con el método de opciones reales

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    Martin Guajardo Thomas

    2008-07-01

    Full Text Available Este trabajo de investigación analiza la aplicación de la teoría de Opciones Reales en la evaluación socioeconómica de proyectos de inversión pública en Chile, de manera de poder determinar sus condiciones de aplicación y limitaciones. Las técnicas tradicionales para evaluar alternativas de inversión, debido a su carácter estático, no capturan apropiadamente la incertidumbre inherente al proyecto, así como tampoco toman en consideración la capacidad que tiene un proyecto para adaptarse a escenarios futuros, es decir, su flexibilidad operativa.  Para corregir estas falencias surge una metodología complementaria llamada Opciones Reales, la cual es una analogía a las opciones financieras que permite reflejar numéricamente el valor de la flexibilidad de un proyecto bajo condiciones de incertidumbre; de esta manera, el método de opciones reales logra fundir la teoría financiera y la gestión estratégica de un proyecto, permitiendo mejores aproximaciones con respecto al valor real del proyecto. La aplicación del método de opciones reales en alternativas de inversión privada ha sido tema de numerosos trabajos e investigaciones, teniéndose un amplio conocimiento en relación a sus limitaciones y consideraciones; sin embargo, no existe claridad en cuanto a su aplicación en alternativas de inversión del sector público. Para llevar adelante esta investigación se desarrollaron, en una primera etapa, los conceptos básicos de la teoría de opciones reales y la evaluación socioeconómica de proyectos; posteriormente se presentan cuatro casos reales de estudio, previamente evaluados con el método tradicional del VAN, para posteriormente evaluarlos con el método de opciones reales según el método binomial con transformada logarítmica. Al comparar los resultados obtenidos con el método de opciones reales y los métodos tradicionales, se pudo comprobar que para todos los casos de estudio el valor arrojado por el método de

  10. Ensayos sobre la sonrisa de volatilidad en mercados de opciones

    OpenAIRE

    Serna Calvo, Gregorio

    2011-01-01

    La tesis comienza analizando los determinantes de la "sonrisa de volatilidad" en el mercado de opciones sobre el indice IBEX-35,obteniendose evidencia de causalidad lineal en el sentido de Granger de los costes de transacción, representados por el diferencial "bid-ask" relativo, ala forma de la sonrisa. A continuación, se propone un modelo de Black-Scholes ampliando donde la volatilidad depende del precio de ejercicio y del diferencial "bid-ask" relativo, obteniendose que dicho modelo no mejo...

  11. El rol estratégico de las opciones reales

    OpenAIRE

    Orellana Villeda, José Giovanni

    2011-01-01

    El análisis del Real Options Approach o ROA como también serán llamadas adelante, establece, una forma de cómo determinar el valor de la flexibilidad en las decisiones futuras. Está herramienta sofisticada constituye, un soporte al presupuesto de capital la cual no ha sido completamente explotada, por los gerentes, debido, a diversos aspectos pedagógicos. Las opciones reales permiten estructurar el pensamiento de manera estratégica. Y es precisamente, este argumento que ha motivado el desarro...

  12. OPCIONES ESTRATÉGICAS DE DESARROLLO ORGANIZACIONAL HACIA LA SOSTENIBILIDAD

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    Patricia Ingrid,Keller

    2012-06-01

    Full Text Available La implementación de estrategias empresariales que construyen valor a lo largo de la cadena productiva de bienes y servicios y simultáneamente contribuyen a la sostenibilidad es uno de los temas más difíciles de abordar en la práctica. Por eso, para el presente trabajo se investigaron las estrategias posibles, identificando aquellas opciones que permiten lograr integrar las dimensiones de la sostenibilidad al desarrollo organizacional desde una perspectiva sistémica, así como sus posibilidades y limitaciones. Las actividades características de las cinco opciones posibles – control de riesgos, construcción de imagen y reputación, productividad y eficiencia, innovación y desarrollo de mercados – pueden implementarse de forma pura, combinada o sucesiva. De esta manera se pueden construir ventajas competitivas en el marco de la sostenibilidad, lo cual permite a la empresa lograr mayores posibilidades de éxito, no solo en el corto, sino también a mediano y largo plazo.

  13. El arrendamiento financiero y valuación de opciones reales

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    Gastón Silverio Milanesi

    2016-01-01

    Full Text Available El trabajo estudia diferentes opciones reales simples y compuestas contenidas en los contratos de leasing, bajo una metodología que combina el método de préstamo equivalente (MPE y opciones reales. Primero se presenta formalmente el MPE y el modelo binomial para valorar las opciones del contrato. Seguida- mente se analiza el valor al vencimiento de las opciones del leasing clasificadas en: a simple: de compra, de cancelar anticipadamente, de renovación y excluyente de renovación-compra, y b compuesta: a riesgo (venture ; canon atado a intensidad de uso (percentage y de pago diferido. Utilizando diferentes casos son valuadas las opciones combinando el modelo binomial y el MPE, estimando valor expandido y valor el valor de la opción sobre el valor. Finalmente se presentan las principales conclusiones.

  14. Brasil, opciones estratégicas de una potencia emergente para afirmar su liderazgo mundial

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    Gisela da Silva Guevara

    2011-11-01

    Full Text Available Desde el siglo XIX Brasil fue adaptando sus estrategias de soft power (poder blando con la meta de afirmar su poderío político y económico en América Latina y en el mundo, en contraposición a otros poderes hegemónicos regionales y mundiales. Sin embargo, sus rivalidades con potencias regionales, como Argentina o Venezuela y, con Estados Unidos, a nivel regional y mundial, nunca llevaron al coloso suramericano a optar por confrontaciones bélicas. Sus estrategias y opciones de política exterior tuvieron siempre en mira la consolidación del país por vía no violenta y a largo plazo. El presente artículo debate la pregunta-problema de si la nación suramericana podrá seguir la línea de poder blando que ha respetado, por siglos, desde su independencia, o será tentada a privilegiar el hard power para lograr, finalmente, ser reconocida como gran potencia en el siglo XXI.

  15. Cualquier tiempo futuro tiene que ser mejor

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    Paquita Armas Fonseca

    2015-01-01

    Full Text Available Cuba tiene un importante movimiento caricaturista, conocido y laureado en los diversos lugares del mundo. No es el caso de la historieta que, a pesar de contar con muy buenos dibujantes, el desarrollo dramatúrgico no está a la altura de la imagen por lo que se ha visto limitada en su desarrollo. El guión es el talón de Aquiles del cómic cubano que no ha evolucionado como se hermana la caricatura. Es con la animación que el cómic cubano ha trascendido sus fronteras. Se trata de un movimiento vivo que ha saltado los más increíbles obstáculos.

  16. Diferencias cualitativas entre experiencias tutoriales para opciones de aprendizaje universitario

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    Ángel J. LÁZARO MARTÍNEZ

    2008-01-01

    Full Text Available Se analiza la tutoría como elemento básico de la excelencia educativa, resaltando su carácter nuclear en todo proceso formativo institucionalizado. Se constata la relación entre los procesos educativos, la orientación y la tutoría, desde el nuevo enfoque de la auténtica orientación. En el contexto universitario se debaten sus competencias, destacando que, desde sus orígenes, la tutoría ha constituido el sentido de la función y el quehacer de la finalidad y optimización de la formación universitaria, tanto en la búsqueda del saber como en la pretensión de aplicación social. Esta situación aboca en el análisis de las opciones de la acción tutorial en la Universidad, sus modalidades y sus posibilidades de intervención, y se plantean, de forma más concreta, recogiendo las experiencias destacables en el ámbito universitario, las estrategias organizativas y de desarrollo en aulas y situaciones individualizadas.

  17. PARA MEDIR LA FLEXIBILIDAD SE DEBEN USAR OPCIONES REALES: UNA VISIÓN GLOBAL

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    Oscar Daniel Mejía Carvajal

    2003-01-01

    Full Text Available Recientemente se ha sentido que los modelos tradicionales de flujo de caja discontinuo (DCF no explican completamente las opciones administrativas de la firma, así como tampoco la flexibilidad y las posibles variantes en sus operaciones. Actualmente la teoría y el desarrollo del modelo de opciones están siendo aplicados para la valoración de derechos de conversión y de suscripción de bonos y acciones, contratos de colocación de valores, seguros, deuda y patrimonio de una firma, hipotecas, deudas subordinadas, contratos de exploración petrolera, etc. Una opción provee al tenedor el derecho de comprar o vender una cantidad fijada de un activo subyacente a un precio fijado de antemano (llamado strike o precio de ejercicio, antes o en la fecha de expiración de la opción. Los árboles de decisión (teoría de juegos constituyen una alternativa para evaluar la flexibilidad asociada con las decisiones de inversión. No obstante, la metodología de opciones reales es rigurosamente más correcta; tanto las opciones reales como los árboles de decisión capturan la flexibilidad, sin embargo las opciones reales son ajustadas por el riesgo.

  18. Valuación de opciones simples y complejas contenidas en arrendamientos financieros

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    Gastón Silverio Milanesi

    2016-01-01

    Full Text Available El valor de los contratos de arrendamiento es una función del valor presente de los cánones más las opciones reales operativas. Sin embargo, el método del préstamo equivalente (MPE, con amplia aplicación en la valuación de arrendamientos, falla porque no incorpora las opciones contenidas en el contrato. De esta forma, el presente trabajo propone un modelo de valuación combinando el MPE y el enfoque binomial para valuar opciones reales. Para lograr lo anterior, se realiza el planteamiento matemático y su aplicación para opciones simples (compra, cancelación anticipada, renovación y compuestas (venture leasing, leasing a porcentaje, pago diferido, pago diferido y compra, demostrando la habilidad del modelo para calcular el valor actual expandido del contrato, como la suma del valor actual de pagos y opciones operativas.

  19. ¿CUÁNTOS SIGNIFICADOS TIENE UN PRODUCTO?

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    Jose Antonio Paris

    2014-06-01

    Full Text Available El marketing esencial se basa en la determinación de los significados en la mente del consumidor y de los códigos en la mente del mercado. Para poder sustentar esto se han creado metodologías como las técnicas de afloramiento de significado y las técnicas proyectivas entre otras. Pero, el nuevo problema que surge de esta conceptualización teórica es si vamos a poner al significado en la base del plan de marketing, la pregunta es ¿cuántos significados se deben determinar? Por lo que sabemos cada cultura tiene sus propias significaciones y los significados también cambian con el tiempo incluso lo hacen contextualmente. Lo cual hace aún más complejo el dilema presentado como título de este artículo. En se presentan los argumentos teóricos que sustentan uno de los descubrimientos más importantes del marketing esencial que sostenemos: en general para cada producto o servicio hay cuatro significados dominantes.

  20. Real options as an alternative methodology to assess investment projects Las opciones reales como metodología alternativa en la evaluación de proyectos de inversión

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    Raúl Enrique Aristizábal Velásquez

    2012-12-01

    Full Text Available This paper aims to broaden the applicability of the assessment methodology of investment projects through real options as a key element for investment decision making. Traditional project valuation methodologies are described and their gaps, which special characteristic is uncertainty, are presented. A parallel between financial and real options that could be used for valuation is made, using the binomial tree method. Finally, a case study in the construction sector shows a project valuation using expand and waiting options.Este trabajo busca ampliar la aplicabilidad de la metodología de valoración de proyectos de inversión por medio de opciones reales como un elemento fundamental al momento de tomar una decisión de si se debe invertir o no. Se hace un recorrido por las técnicas tradicionales para valorar un proyecto de inversión y se plantean los vacíos que estos dejan, con respecto a proyectos en los que su principal característica es la incertidumbre. Se realiza un paralelo entre las opciones financieras y las opciones reales que per- mita valorar, utilizando la metodología de los árboles binomiales. Por último, se elabora un caso del que se plantea valorar una opción de espera y una opción de expandir de manera conjunta en el sector de la construcción.

  1. Interacciones radiculares en sistemas agroforestales: mecanismos y opciones de manejo

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    F. Casanova

    2007-01-01

    Full Text Available Los sistemas agroforestales (SAF son una forma de uso de la tierra en donde las leñosas interactúan con los cultivos y/o animales, con la finalidad de diversificar y optimizar la producción de manera sostenida. Sin embargo, estos sistemas tienen limitantes originados por una combinación inadecuada de las diferentes especies, lo que resulta en competencia entre ellas. Las características radiculares de las especies leñosas tienen un papel importante en el éxito de los SAF, ya que indican modificaciones que pudieran existir entre especies asociadas. Por tanto, el objetivo de esta revisión es analizar la importancia de las interacciones radiculares, los criterios para el manejo con base en las características morfológicas y patrones de crecimiento entre especies y su impacto en los SAF. La incorporación de especies arbóreas dentro de los cultivos requiere de objetivos claros; es decir, conocer el papel que desempeñarían dentro del sistema. No es redituable utilizar especies arbóreas que no poseen cierto valor o producto, ya que la competencia entre los árboles y los cultivos es solamente admisible si es compensada a través de porlas ventajas con relación a los aumentos en la productividad de sistema. Son deseables aquellas especies arbóreas cuyas raíces sean agresivas con relación a los sistemas radiculares del cultivo asociado, y que manifiesten un crecimiento lateral profundo y/o posean una alta plasticidad. Una opción para reducir la competencia radicular es la regulación del espaciamiento y/o distribución de las diversas especies asociadas, así como la aplicación de prácticas de manejo. Los patrones de la actividad radicular de las plantas difieren entre especies, su conocimiento puede ayudar a evitar competencia excesiva y pérdidas de nutrientes en SAF con la asignación óptima del espacio y recursos disponibles.

  2. Opciones no protésicas en el tratamiento de la artrosis de tobillo

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    DR. U. Giovanni Carcuro

    2014-09-01

    Full Text Available La artrosis de tobillo es una patología poco frecuente, tiene una incidencia nueve veces menor que la rodilla o la cadera a pesar de relación entre mayor carga y menor superficie de esta. La mayor parte son de causa secundaria, posterior a un trauma o a cambios en la biomecánica de la misma a diferencia de otras articulaciones como cadera o rodilla que su principal causa es idiopática o primaria. Causas menos frecuentes son las artropatías inflamatorias, hemocromatosis o artropatía neuropática. Es un problema creciente en la atención de salud en todo el mundo, con un 1% de prevalencia de artrosis sintomática en población adulta. El tobillo es la articulación que mayor carga recibe en cuanto a superficie se refiere, aproximadamente 500 N. La superficie articular mide 350 mm2 aproximadamente, mientras que la cadera 1100 mm2 y la rodilla 1120 mm2. Soporta hasta 5 veces el peso corporal durante la marcha. Cambios en la distribución de la carga durante la marcha podrían tener un efecto beneficioso en la lubricación y nutrición del cartílago. El cartílago articular es de 1a 1,7 mm comparado con el grosor de cartílago de la rodilla es de 1 a 6 mm. El tobillo con una gran congruencia articular presenta un cartílago más fino que es capaz de equilibrar mejor las cargas. Para el tratamiento de esta patología existen diferentes alternativas, tanto no quirúrgicas como quirúrgicas, y estas últimas se dividen en aquellas que preservan la articulación y las que no. Entre las alternativas no quirúrgicas esta la modificación de estilos de vida. Pacientes con IMC > 25 tienen un riesgo 1,5 veces mayor para el desarrollo de artrosis de pie y tobillo, siendo factor potencialmente mo-dificable, mejorando la eficacia de todas las otras opciones terapéuticas, conservadoras y quirúrgicas. Las actividades de la vida diaria que aumentan el estrés en la articulación del tobillo, así como los deportes de impacto, deben evitarse y

  3. El uso de opciones reales para la valuación de proyectos innovadores

    OpenAIRE

    Grassetti, Virginia; García Fronti, Javier

    2012-01-01

    El análisis se divide en tres secciones, en la primera se abordan los métodos de valuación de proyectos de inversión propuestos por la Teoría Neoclasista, reflejando sus limitaciones para adaptarse al mercado de tecnologías innovadoras. Luego, se presenta un enfoque de las Opciones Reales como la alternativa que mejor se adapta a las características propias de este nuevo mercado. Por último, se plantea un modelo sencillo que permite analizar las cuestiones más fundamentales de estas metodolog...

  4. El Método de Elementos Finitos en la Valoración de Opciones

    OpenAIRE

    Sanz Herranz, Héctor

    2016-01-01

    En este trabajo se expone una introducción a los conceptos propios de la teoría de valoración de derivados financieros prestando especial atención a las opciones. Asimismo, se presenta el método de los elementos finitos para la resolución de ecuaciones en derivadas parciales justificando su uso desde el marco teórico. Finalmente, se muestran sendos algoritmos del método en algunos problemas de valoración de derivados financieros. Grado en Matemáticas

  5. Opciones tipo barrera sobre la tasa de cambio Peso/Dólar

    Directory of Open Access Journals (Sweden)

    Ángela María Pérez Muñoz

    2007-12-01

    Full Text Available Este artículo es derivado de la investigación titulada Opciones tipo barrera sobretasa de cambio. Se realizó un examen de diversas metodologías existentes parala valoración y medición de los riesgos de las opciones tipo barrera europeas. Larevisión se centró, principalmente, en los métodos numéricos. Las SimulacionesMontecarlo constituyen una metodología para valorar y calcular las coberturas deopciones que dependen de la ruta seguida por los precios del activo subyacentedurante su vida útil. Los resultados generados corroboran que ellas convergensatisfactoriamente en la formulación analítica cuando ésta se ajusta a unaobservación discreta de los precios del activo subyacente. Tales resultados seajustan más cuando se aplica el Método de Control de Varianza de Variables Antitéticas a las Simulaciones Montecarlo. 

  6. Options for rural electrification in Mexico; Opcion para la electrificacion de pequenas comunidades rurales en Mexico

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez Vera, Jorge [Luz y Fuerza del Centro, S. A., Mexico, D. F. (Mexico)

    1994-12-31

    The paper summarizes the results obtained in the study carried out in communities of the Hidalgo State, localized in remote and of difficult access sites. In the study 19 different options, which are technically and economically feasible, from the stand point of commercialization and electrification of the same. The performance of these systems was evaluated with respect to their capability to satisfy 12 technical goals and 5 social-economical, as well as their environmental impact. An hybrid system based on photovoltaic cells, diesel or gasoline generator and a wind-power generator, we think is the recommended option for this type of communities. [Espanol] Este trabajo sintetiza los resultados de un estudio llevado a cabo en comunidades del estado de Hidalgo, localizadas en lugares remotos y de dificil acceso. En el estudio se analizaron 19 diferentes opciones que son factibles tecnica y comercialmente hablando para la electrificacion de las mismas. El comportamiento de estos sistemas fue evaluado con respecto a su capacidad para satisfacer 12 objetivos tecnicos y 5 socioeconomicos, asi como su impacto ambiental. Un sistema hibrido a base de celdas fotovoltaicas, generador a diesel o gasolina y generador eolico, creemos que es la opcion recomendada para este tipo de comunidades.

  7. Options for rural electrification in Mexico; Opcion para la electrificacion de pequenas comunidades rurales en Mexico

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez Vera, Jorge [Luz y Fuerza del Centro, S. A., Mexico, D. F. (Mexico)

    1993-12-31

    The paper summarizes the results obtained in the study carried out in communities of the Hidalgo State, localized in remote and of difficult access sites. In the study 19 different options, which are technically and economically feasible, from the stand point of commercialization and electrification of the same. The performance of these systems was evaluated with respect to their capability to satisfy 12 technical goals and 5 social-economical, as well as their environmental impact. An hybrid system based on photovoltaic cells, diesel or gasoline generator and a wind-power generator, we think is the recommended option for this type of communities. [Espanol] Este trabajo sintetiza los resultados de un estudio llevado a cabo en comunidades del estado de Hidalgo, localizadas en lugares remotos y de dificil acceso. En el estudio se analizaron 19 diferentes opciones que son factibles tecnica y comercialmente hablando para la electrificacion de las mismas. El comportamiento de estos sistemas fue evaluado con respecto a su capacidad para satisfacer 12 objetivos tecnicos y 5 socioeconomicos, asi como su impacto ambiental. Un sistema hibrido a base de celdas fotovoltaicas, generador a diesel o gasolina y generador eolico, creemos que es la opcion recomendada para este tipo de comunidades.

  8. Reciever Function Transect Across Tibet, Tarim and Tien Shan

    Science.gov (United States)

    Marshall, B.; Levin, V. L.; Huang, G.; Roecker, S. W.; Wang, H.

    2010-12-01

    We investigate the region of the ongoing collision between the India and Eurasia tectonic plates that results in widespread deformation of the continental lithosphere. Over the past decade, numerous regional studies were conducted between the Himalaya and the Tien Shan mountains, each illuminating a small part of the area. We combine the data from a number of portable and permanent networks to construct a ~1800 km long profile of lithospheric properties that cross three very different tectonic domains: the Tibetan plateau, the Tarim basin, and the Tien Shan mountains. We use data from 60 stations operated in the region by US, Chinese and French researchers. We use records of distant earthquakes to construct receiver function gathers for each station. The uniformity of processing ensures that our results are comparable along the transect. We examine receiver function gathers at each site, and rank their quality on the basis of number of records, noise levels, and directional stability of the wavefield. We select 27 sites with high-quality data. For these we construct average receiver function traces using data in the 60-85 degree range, and use them as a guide to the lithospheric layering beneath the region. On most receiver functions we constructed the most prominent feature is a positive phase likely associated with the crust-mantle transition. The timing of this phase varies significantly over the length of the profile. Beneath the Tibetan plateau delay times ~7-8 s are seen close to the Himalayas, and nearly 10 s delays are found further north. Delays of 6 to 8 s are seen beneath sites in the Tarim basin and the Tien Shan mountains, and nearly 10 s delays are seen at the border between them. In addition to the pulse associated with the crust-mantle transition we see other locally-consistent features, for example a negative phase with delay values between 3 and 5 s beneath much of the Tibetan plateau.

  9. Modelos de valorización de opciones europeas en tiempo continuo

    Directory of Open Access Journals (Sweden)

    Villamil Jaime

    2006-08-01

    Full Text Available El clásico modelo de valoración de opciones europeas de Black y Scholes (1973 supone que los retornos logarítmicos de un activo financiero se distribuyen normalmente, no obstante varios estudios empíricos muestran, primero, que esta distribución puede ser asimétrica y tener “colas pesadas” y, segundo, que la varianza del precio del activo no es finita. Este artículo presenta la implementación numérica de tres modelos alternativos: elasticidad constante de la varianza (1976, jump-diffusion (1976 y volatilidad estocástica (1987.

  10. Opciones reales, valuación financiera de proyectos y estrategias de negocios. Aplicaciones al caso mexicano

    Directory of Open Access Journals (Sweden)

    Francisco Venegas Martínez

    2006-01-01

    Full Text Available En este trabajo la metodología de opciones reales se presenta como un instrumento indispensable para que los consejos de administración de las empresas tomen decisiones respecto a proyectos de inversión o estrategias de negocios cuando existe la flexibilidad (opcionalidad de tomar en el futuro nuevas decisiones relacionadas con extender, contraer, posponer, enmendar o abandonar un proyecto o estrategia. Al respecto, el presente trabajo realiza una revisión de las diferentes fórmulas analíticas que aparecen en la bibliografía para valuar la opcionalidad de estrategias en el supuesto de que el valor presente de los flujos de efectivo esperados sigue una distribución log normal o bien mediante el uso de métodos de árboles binomiales. En particular, se trata el caso de la toma de decisiones de venta o cierre de una empresa cuando el valor de mercado de sus títulos (de capital y deuda excede el valor presente de los flujos de efectivo esperados o el valor presente de estos flujos es menor que cierto valor de recuperación. En este contexto se analiza el caso de una empresa mexicana de servicios satelitales de comunicación. Asimismo, se aplica la metodología de opciones reales a proyectos carreteros de inversión; específicamente se examina el caso del proyecto de construcción del primer tramo de la autopista Toluca-Atlacomulco según los supuestos de volatilidad constante y estocástica. Es también importante destacar que esta investigación se centra en: i la valuación de opciones reales americanas de abandono; ii valuación de opciones reales compuestas; iii valuación de opciones reales con volatilidad extendiendo el modelo de Hull y White (1987.

  11. Alcoholic fermentation: an option for renewable energy production from agricultural residues; Fermentacion alcoholica: una opcion para la produccion de energia renovable a partir de desechos agricolas

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez, H. J [Universidad Autonoma Metropolitana (Mexico)]. E-mail: hjv@correo.azc.uam.mx; Dacosta, O [Oficina de Consejo, Desarrollo y Transferencia Tecnologica, Dijon (Francia)]. E-mail: statfor@yahoo.com

    2007-10-15

    Biotechnology offers several options for generating renewable energy. One of these technologies consists on producing bioethanol by fermentation. Bioethanol is mainly used to prepare fuel for motor vehicles. This paper presents a proposal to produce such as fuels with a hundred liters experimental fermentation pilot unit. Results derived from essays are similar, in terms of yield and productivity, to those presented by other systems, if we take into account that our unit works under non sterile conditions, which represents significant energy savings. This technology does not require specialized knowledge for its construction and it would accessible to groups of Mexican farmers. [Spanish] La biotecnologia ofrece diversas opciones para la generacion de energias renovables. Una de ellas es la produccion de bioetanol, el cual se obtiene mediante fermentacion. El bioetanol se usa en la preparacion de carburantes para vehiculos automotores. En este articulo se presenta una propuesta para la obtencion de este combustible mediante una unidad de fermentacion piloto experimental de 100 litros. Los resultados de nuestros ensayos, en rendimiento y productividad, son similares a los de otros laboratorios si se considera que esta unidad piloto funciona en condiciones no esteriles, lo que representa como ventaja un ahorro de energia no despreciable. Ademas, la tecnologia no requiere conocimientos especializados para su realizacion y estaria al alcance de grupos campesinos mexicanos.

  12. Cladocera (Crustacea: Branchiopoda of Cat Tien National Park, South Vietnam

    Directory of Open Access Journals (Sweden)

    Artem Y. Sinev

    2013-08-01

    Full Text Available Cladocera of Cat Tien National Park, South Vietnam, and the surrounding agricultural area, were surveyed during the spring of 2009 (onset of the wet season and autumn 2010 (end of the wet season. The studied water bodies included two large lakes (Bau Sau and Bau Chim, small lakes and ponds, temporary pools, rivers and streams, as well as rice fields and ponds in an agricultural area beyond the boundaries of the National Park. Fifty three species of Cladocera were found, 18 of them new for Vietnam. Distribution and taxonomical status of the species are discussed. Of the recorded species, 58.5% (31 were found only in the National Park, 34% (18 both in the National Park and the agricultural area, and only 7.5% (4 exclusively in the agricultural area. Of the 20 species new for Vietnam, only one was found both in the National Park and the agricultural area, all others were found in the National Park only. Such a difference can be directly attributed to the loss of natural habitats (forest ponds and streams in agricultural areas and to the pollution by pesticides. Our study shows the importance of surveys in pristine and protected areas, for the full evaluation of regional microcrustacean richness.

  13. El enfoque de las opciones estratégicas de los actores en el estudio de las relaciones laborales

    Directory of Open Access Journals (Sweden)

    Carmen Marina López Pino

    2003-06-01

    Full Text Available El interés fundamental de este artículo es esclarecer la propuesta analítica desarrollada por el MIT (Massachussetts Institute of Technology, inspirada en el concepto de "opciones estratégicas" para el estudio de las relaciones laborales. De manera introductoria se plantea la problemática de las relaciones laborales actuales y los hallazgos fundamentales de las diferentes investigaciones del equipo del MIT. En segunda instancia se realiza una breve presentación del enfoque de sistemas de Dunlop que este equipo de investigadores busca superar. Seguidamente se exponen los principales conceptos y premisas del enfoque de las opciones estratégicas de los actores. Y, por último, se presentan brevemente algunas de las debilidades de dicha propuesta.

  14. Aplicación de las opciones reales en la toma de decisiones en los mercados de electricidad

    Directory of Open Access Journals (Sweden)

    Felipe Isaza Cuervo

    2014-01-01

    Full Text Available Las decisiones estratégicas en los mercados de electricidad están sujetas a un alto riesgo e incertidumbre; en consecuencia, las opciones reales aparecen como una alternativa para la toma de decisiones en dichos mercados. En el presente artículo se realiza una revisión de literatura analizando y clasificando aplicacio- nes de opciones reales sobre decisiones de inversión, operación, y de políticas y programas energéticos. Además se presenta un ejemplo sintético de aplicación teórico utilizando un modelo binomial para incor- porar energía eólica en vez de térmica de acuerdo con la volatilidad de los precios del carbón. Se concluye que las opciones reales permiten tomar mejores decisiones que los métodos tradicionales, pues capturan a través de sus múltiples modelos las diferentes incertidumbres propias de estos mercados.

  15. Aplicación de las opciones reales en la toma de decisiones en los mercados de electricidad

    Directory of Open Access Journals (Sweden)

    Felipe Isaza Cuervo

    2014-10-01

    Full Text Available Las decisiones estratégicas en los mercados de electricidad están sujetas a un alto riesgo e incertidumbre; en consecuencia, las opciones reales aparecen como una alternativa para la toma de decisiones en dichos mercados. En el presente artículo se realiza una revisión de literatura analizando y clasificando aplicaciones de opciones reales sobre decisiones de inversión, operación, y de políticas y programas energéticos. Además se presenta un ejemplo sintético de aplicación teórico utilizando un modelo binomial para incorporar energía eólica en vez de térmica de acuerdo con la volatilidad de los precios del carbón. Se concluye que las opciones reales permiten tomar mejores decisiones que los métodos tradicionales, pues capturan a través de sus múltiples modelos las diferentes incertidumbres propias de estos mercados.

  16. Energetic sustainability: Challenges and options in Mexico; Sustentabilidad energetica: Retos y opciones en Mexico

    Energy Technology Data Exchange (ETDEWEB)

    Rosas Flores, Dionicio; Sheinbaum Pardo, Claudia [Universidad Nacional Autonoma de Mexico, Mexico, D.F. (Mexico)

    2000-07-01

    In this report present a general overview of energy trends and objectives of policy for Mexico, in the context of sustainable development. The work is divided in two main parts: the first one presents trends in energy use and potential, energy sector reform, social and economics indicators and revision of efficiency and renewable energy. The second part discusses options and instruments of energy politics for the country in regard of the sustainable development. The energy is central to concerns of sustainable development, affecting economic; the local and global environment, and social problems as poverty, population, health and education. Mexico should promote political energy that permit the fulfillment the energy requirements while developing strategies that help to alleviate the social problems and productivity, based on lesser environmental impacts. [Spanish] Este reporte presenta una vision sobre las tendencias energeticas de Mexico y plantea prioridades y objetivos de politica para el pais, en el contexto de desarrollo sustentable. El trabajo muestra dos partes principales: la primera seccion presenta tendencias en el uso de energia, potenciales energeticos e indicadores economicos y sociales, ademas de una revision de eficiencias y politicas de energias renovables. La segunda parte discute opciones, instrumentos y restricciones en el contexto del desarrollo energetico sustentable en el pais. La energia es un elemento central en el desarrollo ya que esta relacionado con la economia, el ambiente local y global y aspectos sociales como pobreza, poblacion, salud y educacion. Esto obliga en Mexico a promover politicas que permitan la cobertura de los requerimientos energeticos, las cuales deben desarrollarse de manera conjunta con estrategias, para ayudar a disminuir los problemas, productivos y sociales con menores impactos ambientales.

  17. Exhumation history of the western Kyrgyz Tien Shan: Implications for intramontane basin formation

    Science.gov (United States)

    Bande, Alejandro; Sobel, Edward R.; Mikolaichuk, Alexander; Schmidt, Alexander; Stockli, Daniel F.

    2017-01-01

    The dextral Talas-Fergana Fault separates the western from the central Tien Shan. Recent work has shed light on the Cenozoic evolution of the eastern and central Tien Shan; much less attention has been paid to the western Tien Shan. In this contribution we present new thermochronological ages for the Fergana and Alai ranges that, combined with the available data set, constrain the Cenozoic exhumation history of the western Tien Shan. Following a tectonically quiet early Cenozoic period, we suggest an onset of exhumation at 25 Ma. This early onset was followed by a period of slower exhumation and in some areas minor reheating. A final, strong late Miocene rapid cooling event is well represented in the western Tien Shan as in other sectors of the range. The early onset of uplift of the western Tien Shan dissected the previously continuous westernmost Parathethyan Sea, progressively isolating basins (e.g., Fergana, Tarim, and Alai basins) in the central Asian hinterland. Moreover, the coeval timing of late Miocene uplift along the length of entire Tien Shan implies that neither the Pamir nor Tarim can be the sole driver for exhumation of the entire range.

  18. Opciones reales aplicadas en redes integradas de servicios de salud empleando diferentes métodos de estimación de la volatilidad

    Directory of Open Access Journals (Sweden)

    Germán González-Echeverri

    2015-07-01

    Full Text Available El objetivo de este artículo es evaluar la posibilidad de expansión de una red integrada de servicios de salud mediante el uso de valoración por opciones reales. Para estimar el parámetro de volatilidad se estudian cuatro metodologías, dos de ellas son usadas en opciones reales las cuales se refieren a: Market Asset Disclaimer y Market Approach. Adicionalmente, las otras dos metodologías propuestas son empleadas en opciones financieras, las cuales son: volatilidad implícita del modelo de Merton y volatilidad implícita mediante Newton-Raphson. Los resultados muestran que la volatilidad estimada mediante las metodologías propuestas es similar a la obtenida por la metodología tradicional de Market Asset Disclaimer. La principal contribución de este artículo consiste en la construcción de la sonrisa de la volatilidad para opciones reales, que es fácil de implementar.

  19. Opciones reales aplicadas en redes integradas de servicios de salud empleando diferentes métodos de estimación de la volatilidad

    Directory of Open Access Journals (Sweden)

    Germán González-Echeverri

    2015-01-01

    Full Text Available El objetivo de este artículo es evaluar la posibilidad de expansión de una red integrada de servicios de salud mediante el uso de valoración por opciones reales. Para estimar el parámetro de volatilidad se estu- dian cuatro metodologías, dos de ellas son usadas en opciones reales las cuales se refieren a: Market Asset Disclaimer y Market Approach . Adicionalmente, las otras dos metodologías propuestas son empleadas en opciones financieras, las cuales son: volatilidad implícita del modelo de Merton y volatilidad implícita mediante Newton-Raphson. Los resultados muestran que la volatilidad estimada mediante las metodo- logías propuestas es similar a la obtenida por la metodología tradicional de Market Asset Disclaimer . La principal contribución de este artículo consiste en la construcción de la sonrisa de la volatilidad para opciones reales, que es fácil de implementar.

  20. Valor en riesgo para un portafolio con opciones financieras Value at risk for a financial portfolio with options

    Directory of Open Access Journals (Sweden)

    Carlos Alexánder Grajales Correa

    2010-07-01

    Full Text Available En este artículo se presentan y aplican diferentes formulaciones matemáticas, exactas y aproximadas, para el cálculo del valor en riesgo (VaR de algunos portafolios con activos financieros, haciendo especial énfasis en aquellos que contienen opciones financieras. El uso y pertinencia de tales formulaciones es analizado según las características e hipótesis que se tengan de los portafolios construidos, para lo cual se analizan en detalle la volatilidad y el percentil de la distribución de los cambios en el valor del portafolio, al igual que la volatilidad estocástica en un horizonte de tiempo dado. Para éste fin, se consideran los métodos de varianzas y covarianzas, simulación histórica y simulación Monte Carlo, desde una perspectiva formal y ampliada a portafolios que contienen opciones financieras, estableciendo algoritmos alternativos de cálculo y comparaciones entre los resultados.This article presents and applies different mathematical, exact and approximated formulations to estimate value at risk of some portfolios with financial assets, emphasizing on those which contain financial options. The use and appropriateness of such formulations is analyzed base don characteristics and hypothesis of constructed portfolios. With this purpose, volatility and distribution percentile of changes in the value of the portfolio are analyzed. Stochastic volatity at a given time is also analyzed. With this purpose, variances, and co-variance methods. Historic simulation and Monte Carlo simulation from a formal and extended perspective to portfolios containing financial options are taken into consideration, establishing alternative of calculation and comparison between the results.

  1. Opciones socio técnicas en la formación de campus virtuales en universidades argentinas

    Directory of Open Access Journals (Sweden)

    Luciana Guido

    2010-09-01

    Full Text Available Hoy en día, aproximadamente 65% de las universidades argentinas cuentan con un campus virtual. Este trabajoanaliza las estrategias desplegadas en los procesos de selección de diferentes opciones tecnológicas para la construcciónde campus virtuales en universidades nacionales argentinas. Se presenta la heterogeneidad de elementosoperantes a la hora de tomar decisiones acerca del tipo de plataforma utilizada (distribución “libre”, “propietaria” odesarrollo propio en función de los diferentes “modelos” de universidades y las definiciones sobre la innovación educativasustentada en la “virtualidad”. Se seleccionaron ocho casos de universidades nacionales basados en una muestrarepresentativa, en relación con el tipo de tecnología utilizada y con las características propias de cada universidad encuanto a sus proyectos fundacionales y sus propuestas “virtuales”. El estudio se centra en el análisis de fuentes deinformación secundaria (documentos institucionales de archivo, prensa nacional y local, resoluciones y normativa,sitios Web de las universidades y 30 entrevistas realizadas durante el periodo 2006-2008 a los gestores universitariosy empresas que prestan servicios a las iniciativas analizadas. La selección de las plataformas adoptadas muestra quelas opciones tecnológicas no se fundan solamente en cuestiones “estrictamente técnicas”, sino que también involucranaspectos organizacionales, cognitivos y culturales de las universidades analizadas.

  2. DUST LOADING OF THE ATMOSPHERE AND GLACIERS IN THE KUMTOR MINING AREA (AKSHYYRAK, TIEN SHAN)

    OpenAIRE

    V. A. Kuzmichenok

    2012-01-01

    Industrial development of the Kumtor Gold Mine in the nival-glacial zone of Tien Shan (altitude ranging from 4000 to 4500 m a.s.l.) is inevitably accompanied by the release of some additional amounts of dust in atmosphere. Sampling in 7 points and an analysis of the quantity (weight) of dust in the seasonal snow (September–April) on glaciers show that the dust pollution does not substantially exceed the natural level of dust in Tien Shan. An analysis of almost 3 000 daily measurements of dust...

  3. Glaciers and hydrological changes in the Tien Shan: simulation and prediction

    International Nuclear Information System (INIS)

    Aizen, V B; Aizen, E M; Kuzmichonok, V A

    2007-01-01

    In this study, we estimated the current glacier state and forecast the potential impact of global and regional climate change on the glaciers and glacier runoff in the Tien Shan. General (G) and detailed (D) simulations were developed based on assessment of the Tien Shan glacier recession between 1943 and 2003 using an iterative stepwise increase in the equilibrium line altitude of 20 m. The G simulation was developed for 2777 grids each of which covered over 1000 km 2 of glacier surface and D for the 15 953 Tien Shan glaciers. Both simulations employed glacier morphometric characteristics derived from Digital Elevation Model based on remote sensing data, high resolution maps and in situ GPS validation. Simulated changes in glacier area demonstrated that a possible increase in air temperature of 1 deg. C at E-barLA must be compensated by a 100 mm increase in precipitation at the same altitude if Tien Shan glaciers are to be maintained in their current state. An increase in mean air temperature of 4 deg. C and precipitation of 1.1 times the current level could increase E-barLA by 570 m during the 21st century. Under these conditions, the number of glaciers, glacier covered area, glacier volume, and glacier runoff are predicted to be 94%, 69%, 75%, and 75% of current values. The maximum glacier runoff may reach as much as 1.25 times current levels while the minimum will likely equal zero

  4. The origin and evolution of Iskanderkul Lake in the western Tien Shan and related geomorphic hazards

    Czech Academy of Sciences Publication Activity Database

    Emmer, Adam; Kalvoda, J.

    2017-01-01

    Roč. 99, č. 2 (2017), s. 139-154 ISSN 0435-3676 R&D Projects: GA MŠk(CZ) LO1415 Institutional support: RVO:86652079 Keywords : iskanderkul lake * rockslide dam * outburst flood * tien shan Subject RIV: EH - Ecology, Behaviour OBOR OECD: Environmental sciences (social aspects to be 5.7) Impact factor: 1.302, year: 2016

  5. Empirical Relationship between particulate matter and Aerosol Optical Depth over Northern Tien-Shan, Central Asia

    Science.gov (United States)

    Measurements were obtained at two sites in northern Tien-Shan in Central Asia during a 1-year period beginning July 2008 to examine the statistical relationship between aerosol optical depth (AOD) and of fine [PM2.5, particles less than 2.5 μm aerodynamic diameter (AD)] and coars...

  6. Da Chrétien de Troyes a Shakespeare («The tragedy of King Richard the Third», a. I, sc. 2

    Directory of Open Access Journals (Sweden)

    Alfonso D'Agostino

    2015-07-01

    Full Text Available L’articolo si propone di considerare le somiglianze fra alcune vicende antico-francesi (l’Yvain di Chrétien de Troyes e il fabliau anonimo De celle que se fist foutre sur la fosse son mari con una scena del Riccardo III di Shakespeare. Anche se non si può dire che il dramma inglese dipenda dai testi narrativi oitanici, esso sviluppa lo stesso motivo della vedova consolata e una serie di motivi secondarî, di immagini (il sangue, il diavolo, la seduzione e di espressioni letterarie in modo sintomaticamente affine. The paper aims to evaluate similarities between some Old-French narratives (Chrétien de Troyes’ Yvain and the anonymous fabliau De celle que se fist foutre sur la fosse son mari and a scene from Shakespeare’s Richard III. Although we cannot affirm that Shakespeare’s play derives from the French narratives, it develops the same theme of “comforted widow” along with a series of secondary themes, of images (the blood, the devil, the seduction and literary expressions in a symptomatically, very similar way.

  7. Calculo y comparacion de la prima de un reaseguro de salud usando el modelo de opciones de Black-Scholes y el modelo actuarial

    Directory of Open Access Journals (Sweden)

    Luis Eduardo Giron

    2015-12-01

    Full Text Available La presente investigación pretende calcular y comparar la prima de un reaseguro  usando el modelo de opciones de Black-Scholes y el modelo clásico actuarial tradicional. El período de análisis va desde enero de 2011 hasta diciembre de 2012. Los resultados obtenidos muestran que el modelo de Black-Scholes, que se utiliza normalmente para valorar opciones financieras, puede ser también usado para la estimación de primas de reaseguros de salud; y que la prima neta estimada a partir de este modelo se aproxima a las establecidas por el método actuarial, excepto cuando el deducible del reaseguro es muy alto (por encima de $200.000.000.

  8. Las flores del desierto. Opciones de vida en pueblos de la región central de Sonora

    Directory of Open Access Journals (Sweden)

    Ma. Amalia Gracia

    2014-01-01

    Full Text Available Aunque la búsqueda de las localidades rurales por generar opciones de vida se observa en el esfuerzo de algunos pobladores, en México la política pública se restringe a ofrecer garantías sociales; le deja al mercado la creación de alternativas económicas, que no alcanzan para producir desarrollo local y regional. El presente artículo reflexiona sobre esto, a partir de una iniciativa de trabajo asociativo surgida hace más de seis años en pueblos de la región central del norte de Sonora, y muestra cómo se resuelven temporal y dinámicamente las tensiones entre prácticas de cooperación y reciprocidad y las de intercambio con el mercado utilizando postulados teóricos de distintas disciplinas, retomadas por las propuestas de economía solidaria. El caso ilustra las dificultades, riqueza y potencialidad de iniciativas como ésta, y la importancia del apoyo gubernamental en localidades a las que la baja capacidad económica y la generalización del narcotráfico las vuelve frágiles para contrarrestar procesos profundos de despoblamiento.

  9. Source processes of strong earthquakes in the North Tien-Shan region

    Science.gov (United States)

    Kulikova, G.; Krueger, F.

    2013-12-01

    Tien-Shan region attracts attention of scientists worldwide due to its complexity and tectonic uniqueness. A series of very strong destructive earthquakes occurred in Tien-Shan at the turn of XIX and XX centuries. Such large intraplate earthquakes are rare in seismology, which increases the interest in the Tien-Shan region. The presented study focuses on the source processes of large earthquakes in Tien-Shan. The amount of seismic data is limited for those early times. In 1889, when a major earthquake has occurred in Tien-Shan, seismic instruments were installed in very few locations in the world and these analog records did not survive till nowadays. Although around a hundred seismic stations were operating at the beginning of XIX century worldwide, it is not always possible to get high quality analog seismograms. Digitizing seismograms is a very important step in the work with analog seismic records. While working with historical seismic records one has to take into account all the aspects and uncertainties of manual digitizing and the lack of accurate timing and instrument characteristics. In this study, we develop an easy-to-handle and fast digitization program on the basis of already existing software which allows to speed up digitizing process and to account for all the recoding system uncertainties. Owing to the lack of absolute timing for the historical earthquakes (due to the absence of a universal clock at that time), we used time differences between P and S phases to relocate the earthquakes in North Tien-Shan and the body-wave amplitudes to estimate their magnitudes. Combining our results with geological data, five earthquakes in North Tien-Shan were precisely relocated. The digitizing of records can introduce steps into the seismograms which makes restitution (removal of instrument response) undesirable. To avoid the restitution, we simulated historic seismograph recordings with given values for damping and free period of the respective instrument and

  10. ¿Qué tienes en la cara, eso se quita?

    Directory of Open Access Journals (Sweden)

    Jimmy Arévalo Romero

    2013-10-01

    Full Text Available El presente texto es un ensayo preparado por estudiantes de Medicina que tiene origen en su experiencia personal, ya que trata del padecimiento del acné en lo adolescencia, en él quieren concienciar a lo comunidad en general sobre las consecuencias psicológicas que genera el padecimiento del acné en el adolescente, y estimular a las personas a contribuir al desarrollo de estos jóvenes en la sociedad.

  11. EL MÉTODO DE DIFERENCIAS FINITAS EN EVALUACIÓN DE OPCIONES REALES THE FINITE DIFFERENCE METHOD IN REAL OPTIONS VALUATION

    Directory of Open Access Journals (Sweden)

    Sebastián Otero G

    2008-06-01

    Full Text Available Una respuesta a las falencias de los métodos tradicionales de evaluación de proyectos de inversión corresponde a la metodología de "Opciones Reales" que proviene del análisis de opciones sobre instrumentos financieros desarrollado en la década de los 70. Esta técnica, aplicada inicialmente a activos no financieros o reales, ha sido aplicada con singular éxito en la evaluación de proyectos de inversión y se presenta como una alternativa a los métodos de evaluación tradicionales, pues incluye tanto los aspectos estratégicos como de la teoría financiera. La variación fundamental que experimenta la evaluación de proyectos de inversión mediante opciones reales con respecto a la realizada mediante los métodos tradicionales es la incorporación de la incertidumbre y la flexibilidad como elementos que agregan valor al proyecto. En el presente este trabajo se realiza un recorrido del estado del arte en lo que respecta a la teoría de opciones reales para la evaluación de proyectos de inversión mediante diferencias finitas. Se describe la importancia de los componentes económicos y estratégicos a la hora de evaluar proyectos de inversión ante escenarios de incertidumbre, analizando las características de esta metodología, destacando sus virtudes y defectos e identificándose su aplicabilidad en la evaluación de proyectos de inversión. Finalmente se realiza una implementación del método de diferencias finitas implícitas (DFI para la evaluación de un caso real que cuenta con las opciones de esperar, abandonar, contraer, expandir y cambiar a mejor uso alternativo, evaluándose para todas las opciones y combinaciones de opciones posibles. Los resultados fueron comparados con la metodología tradicional (VAN y el árbol binomial con transformada logarítmica (ABTL. Ambas metodologías (DFI y ABTL entregan valores equivalentes, siendo ambos superiores a los obtenidos mediante la metodología tradicional (VAN, diferencia que

  12. De l’utopie socialiste au réalisme chrétien

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    Isabelle Richet

    2006-03-01

    Full Text Available Le New Deal est le premier mouvement réformiste d’ampleur dans l’histoire des Etats‑Unis qui n’ait pas été inspiré, ni soutenu, par les forces du protestantisme. Si une majorité des protestants et de leur clergé se sont opposés au New Deal à partir de positions conservatrices, le théologien Reinhold Niebuhr en a développé au départ une virulente critique de gauche avant de finalement rallier le président démocrate à la fin des années trente. Nourrie par le rejet de l’idéalisme du Social Gospel, incapable à ses yeux de comprendre les rapports sociaux en terme de classe et de pouvoir, la critique de Niebuhr emprunte les outils d’analyse marxistes pour développer une approche réaliste, tant du point de vue des fins que des moyens de la lutte politique. Le New Deal lui apparaît avant tout comme un programme visant à sauver le capitalisme, alors que la société fondée sur la justice qu’il envisage passe par la socialisation des moyens de production qui ne pourra émerger qu’à travers des conflits sociaux au cours desquels les moyens de lutte même violents sont justifiés. Mais sous l’influence des évènements en Europe au lendemain de la victoire d’Hitler, Reinhold Niebuhr se tourne au milieu des années trente vers une réflexion théologique inspirée de l’orthodoxie de Karl Barth et de son frère Richard Niebuhr, qui l’amène à réintroduire le péché comme la limite absolue de toute l’expérience humaine, interdisant d’envisager la création d’une société de paix et de justice. Ce nouvel absolutisme théologique nourrit un relativisme politique, le réalisme chrétien consistant désormais à choisir la moins mauvaise des options en présence. De ce point de vue, le président démocrate qui appelle à la préparation militaire s’impose désormais comme le choix le plus réaliste face à la montée du fascisme en Europe.The New Deal was the first major reformist experiment in the

  13. Salud Tiene Sabor: a model for healthier restaurants in a Latino community.

    Science.gov (United States)

    Nevarez, Carmen R; Lafleur, Mariah S; Schwarte, Liz U; Rodin, Beth; de Silva, Pri; Samuels, Sarah E

    2013-03-01

    The prevalence of overweight and obesity in children has risen nationally in recent decades, and is exceptionally high in low-income communities of color such as South Los Angeles CA. Independently owned restaurants participating in the Salud Tiene Sabor program at ethnic foods marketplace Mercado La Paloma in South Los Angeles are responding to the childhood obesity crisis by posting calories for menu items and providing nutrition information to patrons. To evaluate whether menu labeling and nutrition information at point of purchase have an influence on availability of healthy food options, patron awareness of calorie information, and restaurant owners' support of the program. A case-study design using mixed methods included restaurant owner and stakeholder interviews, patron surveys, and environmental assessments. Data were collected using originally designed tools, and analyzed in 2009-2011. Healthy eating options were available at the Mercado La Paloma; restaurant owners and the larger community supported the Salud Tiene Sabor program; 33% of patrons reported calorie information-influenced purchase decisions. Owners of independent restaurants have an important role in improving access to healthy foods in low-income, Latino communities. Copyright © 2013 American Journal of Preventive Medicine. Published by Elsevier Inc. All rights reserved.

  14. DUST LOADING OF THE ATMOSPHERE AND GLACIERS IN THE KUMTOR MINING AREA (AKSHYYRAK, TIEN SHAN

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    V. A. Kuzmichenok

    2012-01-01

    Full Text Available Industrial development of the Kumtor Gold Mine in the nival-glacial zone of Tien Shan (altitude ranging from 4000 to 4500 m a.s.l. is inevitably accompanied by the release of some additional amounts of dust in atmosphere. Sampling in 7 points and an analysis of the quantity (weight of dust in the seasonal snow (September–April on glaciers show that the dust pollution does not substantially exceed the natural level of dust in Tien Shan. An analysis of almost 3 000 daily measurements of dust in the surface layer of air at 4 points around the gold mine has also shown that the economic activity has no significant impact on dust production. It is likely that the manmade component of overall dust in the immediate vicinity of the deposit and the gob pile does not exceed 20%. No increase in the content of dust and in its anthropogenic component with time has been found. Thus, we suggest that the principal amount of dust in the area is brought during the cold season from snow-free areas of Central Asia.

  15. Asimetría y curtosis en el modelo binomial para valorar opciones reales: caso de aplicación para empresas de base tecnológica

    OpenAIRE

    Gastón Silverio Milanesi

    2013-01-01

    El trabajo propone un modelo de valoración de opciones reales con base en el modelo binomial utilizando la transformación de Edgeworth (Rubinstein, 1998) para incorporar momentos estocásticos de orden supe- rior, especialmente para ciertos tipos de organizaciones, como empresas de base tecnológica, donde no se dispone de cartera de activos financieros gemelos, comparables de mercado y procesos estocásticos no gaussianos. Primero, se presenta el desarrollo formal del modelo, luego su aplicació...

  16. Retribución de directivos basada en opciones y comportamiento frente al riesgo =Option-based executive compensation and risk-taking behavior

    OpenAIRE

    Belda Ruiz, María

    2015-01-01

    La retribución de directivos basada en opciones, comúnmente conocidas como stock options, proporciona incentivos para modificar el perfil de riesgo de la empresa a través de la sensibilidad de la riqueza del directivo a las variaciones en el precio de las acciones de la empresa (delta) y a la volatilidad implícita negociada en el mercado (vega). El objetivo de esta Tesis Doctoral es analizar en detalle estos niveles de incentivos, delta y vega, a través de modelos de valoración que se adaptan...

  17. Modelo para la selección de opciones estratégicas en el sector de textiles de uso técnico

    OpenAIRE

    Detrell Domingo, Ariadna

    2007-01-01

    El objeto de la tesis es establecer una sistemática para la detección de oportunidades estratégicas dentro del sector de textiles de uso técnico. Desde esta perspectiva, se analizan diversos modelos conceptuales para la selección de opciones estratégicas, para definir uno de nuevo adecuado a la idiosincrasia del sector industrial textil. El modelo conceptual a definir es ecléctico porqué utilizará algunas de las herramientas habitualmente empleadas para el análisis estratégico interno y exter...

  18. Opciones vacunales contra los virus patógenos de porcinos PRRS y PCV2, un binomio frecuente

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    Marcos Cajero-Juárez

    2017-01-01

    Full Text Available En la última década, el síndrome reproductivo y respiratorio porcino (PRRS, por sus siglas en inglés y las enfermedades asociadas al circovirus porcino tipo 2 (PCV2, por sus siglas en inglés, representan una gran preocupación para la industria porcícola, debido a la afectación de los índices productivos. En consecuencia, su presencia va acompañada de cuantiosas pérdidas económicas. Actualmente, en la mayoría de los centros de producción, se utilizan vacunas clásicas, es decir, elaboradas a partir del virus completo viable ó atenuado. En relación al PCV2, se dispone de pocas vacunas de nueva generación, referidas como aquellas obtenidas a través de la tecnología del ADN recombinante, mientras que, únicamente vacunas clásicas están disponibles contra el virus PRRSV. En este manuscrito, revisamos la naturaleza de los virus PRRSV y PCV2, así también, resaltamos la importancia económica, de acuerdo a los datos de prevalencia nacional e internacional. Además, se incluyen datos de nuevas opciones vacunales, en relación con las vacunas comerciales que, en algunos casos, se ha documentado una baja protección contra cepas heterólogas y cepas de reciente aparición. Por un lado, la investigación en vacunas de nueva generación, ha tenido buena aceptación, debido a la posibilidad de seleccionar la información genética del virus para estimular la respuesta inmune protectora del hospedero y, por otro, porque se acelera el desarrollo de vacunas, e incluso, es posible evitar las infecciones de las cuales es responsable el virus vacunal.

  19. Crustal block structure by GPS data using neural network in the Northern Tien Shan

    Science.gov (United States)

    Kostuk, A.; Carmenate, D.

    2010-05-01

    For over ten years regular GPS measurements have been carried out by Research Station RAS in the Central Asia. The results of these measurements have not only proved the conclusion that the Earth's crust meridional compression equals in total about 17 mm/year from the Tarim massif to the Kazakh shield, but have also allowed estimating deformation behavior in the region. As is known, deformation behavior of continental crust is an actively discussed issue. On the one hand, the Earth's crust is presented as a set of microplates (blocks) and deformation here is a result of shifting along the blocks boundaries, on the other hand, lithospheric deformation is distributed by volume and meets the rheological model of nonlinear viscous fluid. This work represents an attempt to detect the block structure of the surface of the Northern Tien Shan using GPS velocity fields. As a significant difference from analogous works, appears the vector field clustering with the help of neural network used as a classifier by many criteria that allows dividing input space into areas and using of all three components of GPS velocity. In this case, we use such a feature of neural networks as self-organization. Among the mechanisms of self-organization there are two main classes: self-organization based on the Hebb associative rule and the mechanism of neuronal competition based on the generalized Kohonen rule. In this case, we use an approach of self-organizing networks in which we take neuronal competition as an algorithm for their training. As a rule, these are single-layer networks where each neuron is connected to all components of m-dimensional input vector. GPS vectors of the Central Asian velocity field located within the territory of the Northern Tien Shan were used as input patterns. Measurements at GPS sites were fulfilled in 36 hour-long sessions by double-frequency receivers Trimble and Topcon. In so doing, measurement discreteness equaled 30 seconds; the data were processed by

  20. La alucinación verbal tiene la estructura de la holofrase

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    Arturo de la Pava Ossa

    2009-05-01

    Full Text Available ¿En qué sentido la alucinaciónauditiva tiene la estructura dela holofrase? La holofrase es lainterjección, dice Lacan en 1958.En 1964, plantea que cuando enel primer par significante no hayintervalo, se solidifica, “se holofrasea”;a lo que añade que algo delmismo orden ocurre en la psicosis.Esta afirmación aporta elementospara pensar que la alucinación esuna holofrase y cómo a partir deella el psicótico construye su delirioparanoico.Palabras clave: holofrase, interjección,alucinación, discurso, funciónfálica.

  1. Miseria y violencia en El Coronel no tiene quien le escriba

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    Gloria Escobar Soriano

    1999-02-01

    Full Text Available El trabajo describe la marginación y la pobreza de un sector de la sociedad colombiana en El Coronel no tiene quien le escriba, la célebre novela de Gabriel García Márquez. Mientras el Coronel espera la llegada de la carta, su hijo Agustín, ha muerto por sus actividades revolucionarias. El y su mujer enferma viven en una casa hipotecada y comen de las migajas que le sobran al gallo. El grado de injusticia y violencia política que se respira en el ambiente aumentan la crisis económica del Coronel y generan en él una resistencia pasiva que recobra cuando se niega a vender el gallo y decide esperar la fecha de la pelea.

  2. Evaluación económica de proyectos de inversión basada en la teoría de opciones reales

    Directory of Open Access Journals (Sweden)

    Ignacio Andres Garrido Concha

    2003-07-01

    Full Text Available En la presente investigación se analiza un nuevo enfoque, basado en la aplicación de la Teoría de Opciones Reales para realizar la evaluación económica de proyectos de inversión. El mismo, posee el potencial de entregar una aproximación del valor de la flexibilidad que posee un proyecto, permitiendo al evaluador capturar numéricamente el valor de la estrategia. El objetivo fundamental de la presente investigación fue proponer una “Metodología de Evaluación Económica de proyectos de inversión a partir de la Teoría de Opciones Reales”, con el fin de presentarla como una herramienta de evaluación alternativa a los métodos tradicionales. A modo de aplicación de esta metodología, basada en el Método Binomial con Transformada Logarítmica, se realizó la evaluación económica de distintos proyectos reales los cuales corresponden a distintas variaciones del proyecto “Implementación de un Sistema de Información Geográfica (SIG para controlar la cartografía de las plantaciones pertenecientes a Forestal Mininco S.A” estudiadas previamente por Julio Becker.  

  3. Heterogeneities of the shear wave attenuation field in the lithosphere of East Tien Shan and their relationship with seismicity

    Science.gov (United States)

    Kopnichev, Yu. F.; Sokolova, I. N.

    2012-02-01

    The shear wave attenuation field in the lithosphere of Eastern Tien Shan has been mapped. The method based on analysis of the ratio between amplitudes of Sn and Pn waves was used. On aggregate, about 120 seismograms made at the Makanchi station (MKAR), mainly in the period of 2003-2009, at epicentral distances of about 350-1200 km were analyzed. It was found that shear wave attenuation in the lithosphere of Eastern Tien Shan is weaker than that in the region of Central Tien Shan. This agrees with the fact that the rate of deformation of the Earth's crust in Eastern Tien Shan is lower (based on GPS data), as is the seismicity level, in comparison to Central Tien Shan. The zones of high attenuation, where strong earthquakes with M > 7.0 have not occurred for the last 200 years, have been identified: first of all, these are the area west of Urumqi and that of the Lop Nur test site. It is suggested that in the first zone, where an annular seismicity structure has formed over the last 30 years, a strong earthquake may be being prepared. The second zone is most probably related to the uplift of mantle fluids resulting from a long-term intensive technogenic effect, analogous to what has occurred in areas of other nuclear test sites (Nevada and Semipalatinsk).

  4. Development of Petrov glacial-lake system (Tien Shan and outburst risk assessment

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    I. A. Torgoev

    2013-01-01

    Full Text Available Global climate warming causes an intensive melting and retreat of glaciers in the Tien Shan mountains. Melting water of glaciers causes overfilling of high mountain lakes. The increase of the surface and volume of the Petrov Lake accompanied with the decrease of stability of the dam represents an extremely dangerous situation that can produce a natural disaster. Failure can happen due to erosion, a buildup of water pressure, an earthquake or if a large enough portion of a glacier breaks off and massively displaces the waters in a glacial lake at its base. In case of the lake dam rupture, flooding of a disposal site of highly toxic tailing from the gold mine Kumtor is a threat. If this happens, the toxic waste containing cyanides would contaminate a large area in the Naryn (Syrdarya river basin. Even if the flooding of the disposal site does not occur, the damage after lake dam fracture will be immense due to the glacial lake outburst flood may be a devastating mudslide. In order to prevent or reduce the risk of this event we recommend performing engineering surveys for the development and implementation of the project for the controlled reduction of water level in the Blue Bay of the Petrov Lake to a safe volume.

  5. Seismic triggering of landslides, Part A: Field evidence from the Northern Tien Shan

    Science.gov (United States)

    Havenith, H.-B.; Strom, A.; Jongmans, D.; Abdrakhmatov, A.; Delvaux, D.; Tréfois, P.

    Landslides triggered by strong earthquakes often caused most of the global damage and most of all casualties related to the events, such as shown by the M = 7.7 Peru earthquake in 1970, by the M = 7.6 El Salvador earthquake in 2001 or by the M = 7.4 Khait (Tajikistan) earthquake in 1949. The obvious impact of a landslide on the population is directly related to its movement. Yet, prediction of future failure potential and hence future risk to population is necessary in order to avoid further catastrophes and involves the analyses of the origin of seismic instability. The seismic landslide potential is mainly determined by the interaction between the regional seismic hazard and local geological conditions. At a local scale, seismic factors interfering with geological conditions can produce site-specific ground motions. The influence of such Site Effects on instability is the principal topic of this paper, which is divided into two parts, A and B. The present Part A is concerned with the correlation of field data with observed instability phenomena. Field data were obtained on mainly three landslide sites in the Northern Tien Shan Mountains in Kyrgyzstan, Central Asia. Geophysical prospecting, earthquake recordings, geological observation, trenching and geotechnical tests were the main investigation tools. The collected information gives an insight in the geological background of the slope failure and allows us to roughly infer failure mechanisms from field evidence. A detailed analysis of the susceptibility of a mechanism to specific geological conditions will be shown in Part B.

  6. Asimetría y curtosis en el modelo binomial para valorar opciones reales: caso de aplicación para empresas de base tecnológica

    Directory of Open Access Journals (Sweden)

    Gastón Silverio Milanesi

    2013-01-01

    Full Text Available El trabajo propone un modelo de valoración de opciones reales con base en el modelo binomial utilizando la transformación de Edgeworth (Rubinstein, 1998 para incorporar momentos estocásticos de orden superior, especialmente para ciertos tipos de organizaciones, como empresas de base tecnológica, donde no se dispone de cartera de activos financieros gemelos, comparables de mercado y procesos estocásticos no gaussianos. Primero, se presenta el desarrollo formal del modelo, luego su aplicación sobre la valuación de spin-off tecnológico universitario, sensibilizando asimetría-curtosis y exponiendo el impacto en el valor del proyecto. Finalmente, se concluye sobre limitaciones y ventajas de la propuesta de valoración que resume la simplicidad del modelo binomial e incorporando momentos de orden superior en subyacentes con procesos no normales.

  7. Asimetría y curtosis en el modelo binomial para valorar opciones reales: caso de aplicación para empresas de base tecnológica

    Directory of Open Access Journals (Sweden)

    Gastón Silverio Milanesi

    2013-07-01

    Full Text Available El trabajo propone un modelo de valoración de opciones reales con base en el modelo binomial utilizando la transformación de Edgeworth (Rubinstein, 1998 para incorporar momentos estocásticos de orden supe- rior, especialmente para ciertos tipos de organizaciones, como empresas de base tecnológica, donde no se dispone de cartera de activos financieros gemelos, comparables de mercado y procesos estocásticos no gaussianos. Primero, se presenta el desarrollo formal del modelo, luego su aplicación sobre la valuación de spin-off tecnológico universitario, sensibilizando asimetría-curtosis y exponiendo el impacto en el valor del proyecto. Finalmente, se concluye sobre limitaciones y ventajas de la propuesta de valoración que resume la simplicidad del modelo binomial e incorporando momentos de orden superior en subyacentes con pro- cesos no normales.

  8. La valoración de proyectos de energía eólica en Colombia bajo el enfoque de opciones reales.

    OpenAIRE

    Maya Ochoa, Cecilia; Hernández Betancur, Juan David; Gallego Múnera, Óscar Mauricio

    2012-01-01

    Este estudio explora diferentes metodologías de valoración de proyectos de generación de energía eólica en Colombia. Inicialmente se valora con base en flujos de caja descontados, luego se aplica el enfoque de opciones reales, estimando su valor extendido, incluida una opción real de expansión. Para estimar la volatilidad, parámetro fundamental de la valoración de la opción real, se simulan los procesos que siguen las variables con alta incidencia en ella, como el precio de la energía y los v...

  9. Contabilización de Contratos de Futuros, Opciones, Forwards y Swaps (Accounting treatment for future, options, forwards and swap contracts

    Directory of Open Access Journals (Sweden)

    Vernor Mesén Figueroa

    2012-12-01

    Full Text Available Un entorno cada vez más dinámico y evolutivo ha dado paso al surgimiento y, por ende, al uso cada vez más frecuente de instrumentos financieros cuya flexibilidad y capacidad de ajuste a las condiciones de mercado permitan a las personas y empresas lograr sus objetivos de operación, inversión y financiamiento. En el contexto antes descrito, los contratos de futuros, opciones, forwards y swaps representan mecanismos cuyas características operativas permiten a sus tenedores el logro de objetivos alternativos tales como la cobertura eficaz de diferentes tipos de riesgos o la obtención de ganancias o pérdidas derivadas de la especulación. El presente artículo pretende reseñar, en forma breve, los mecanismos de operación de los contratos de futuros, opciones, forwards y swaps, para luego enfatizar en los criterios de contabilización que toda entidad o intermediario financiero debe seguir para reconocer los efectos que dichos tipos de contratos tienen sobre su posición financiera, resultados de operación y flujos de efectivo.   ABSTRACT A rapidly changing and evolving environment has given rise and increased the use of financial tools whose flexibility and adjusting capabilities to variable market conditions allow individuals and companies to achieve their operating, investment and financial goals. Within this framework, contracts for futures, options, forwards and swaps provide mechanisms with operating characteristics that allow their tenants to achieve alternative objectives such as the effective coverage of different risks or the attaining of profits or losses as a result of speculation. This article attempts to resume the operating mechanisms of futures, options, forwards and swap contracts and then concentrates into the accounting criteria that must be followed by financial intermediaries or entities to recognize the effects such contracts have on their financial position, operational results and cash flow.

  10. Seismic triggering of landslides, Part A: Field evidence from the Northern Tien Shan

    Directory of Open Access Journals (Sweden)

    H.-B. Havenith

    2003-01-01

    Full Text Available Landslides triggered by strong earthquakes often caused most of the global damage and most of all casualties related to the events, such as shown by the M = 7.7 Peru earthquake in 1970, by the M = 7.6 El Salvador earthquake in 2001 or by the M = 7.4 Khait (Tajikistan earthquake in 1949. The obvious impact of a landslide on the population is directly related to its movement. Yet, prediction of future failure potential and hence future risk to population is necessary in order to avoid further catastrophes and involves the analyses of the origin of seismic instability. The seismic landslide potential is mainly determined by the interaction between the regional seismic hazard and local geological conditions. At a local scale, seismic factors interfering with geological conditions can produce site-specific ground motions. The influence of such Site Effects on instability is the principal topic of this paper, which is divided into two parts, A and B. The present Part A is concerned with the correlation of field data with observed instability phenomena. Field data were obtained on mainly three landslide sites in the Northern Tien Shan Mountains in Kyrgyzstan, Central Asia. Geophysical prospecting, earthquake recordings, geological observation, trenching and geotechnical tests were the main investigation tools. The collected information gives an insight in the geological background of the slope failure and allows us to roughly infer failure mechanisms from field evidence. A detailed analysis of the susceptibility of a mechanism to specific geological conditions will be shown in Part B.

  11. Inhibition of metastasis, angiogenesis, and tumor growth by Chinese herbal cocktail Tien-Hsien Liquid

    Directory of Open Access Journals (Sweden)

    Sun Andy

    2010-04-01

    Full Text Available Abstract Background Advanced cancer is a multifactorial disease that demands treatments targeting multiple cellular pathways. Chinese herbal cocktail which contains various phytochemicals may target multiple dys-regulated pathways in cancer cells and thus may provide an alternative/complementary way to treat cancers. Previously we reported that the Chinese herbal cocktail Tien-Hsien Liguid (THL can specifically induce apoptosis in various cancer cells and have immuno-modulating activity. In this study, we further evaluated the anti-metastatic, anti-angiogenic and anti-tumor activities of THL with a series of in vitro and in vivo experiments. Methods The migration and invasion of cancer cells and endothelial cells was determined by Boyden chamber transwell assays. The effect of THL on pulmonary metastasis was done by injecting CT-26 colon cancer cells intravenously to syngenic mice. The in vitro and in vivo microvessel formation was determined by the tube formation assay and the Matrigel plug assay, respectively. The in vivo anti-tumor effect of THL was determined by a human MDA-MB-231 breast cancer xenograft model. The expression of metalloproteinase (MMP-2, MMP-9, and urokinase plasminogen activator (uPA was measured by gelatin zymography. The expression of HIF-1α and the phosphorylation of ERK1/2 were determined by Western blot. Results THL inhibited the migration and invasion ability of various cancer cells in vitro, decreased the secretion of MMP-2, MMP-9, and uPA and the activity of ERK1/2 in cancer cells, and suppressed pulmonary metastasis of CT-26 cancer cells in syngenic mice. Moreover, THL inhibited the migration, invasion, and tube formation of endothelial cells in vitro, decreased the secretion of MMP-2 and uPA in endothelial cells, and suppressed neovascularization in Matrigel plugs in mice. Besides its inhibitory effect on endothelial cells, THL inhibited hypoxia-induced HIF-1α and vascular endothelial growth factor-A expression

  12. Inhibition of metastasis, angiogenesis, and tumor growth by Chinese herbal cocktail Tien-Hsien Liquid

    International Nuclear Information System (INIS)

    Chia, Jean-San; Du, Jia-Ling; Hsu, Wei-Bin; Sun, Andy; Chiang, Chun-Pin; Wang, Won-Bo

    2010-01-01

    Advanced cancer is a multifactorial disease that demands treatments targeting multiple cellular pathways. Chinese herbal cocktail which contains various phytochemicals may target multiple dys-regulated pathways in cancer cells and thus may provide an alternative/complementary way to treat cancers. Previously we reported that the Chinese herbal cocktail Tien-Hsien Liguid (THL) can specifically induce apoptosis in various cancer cells and have immuno-modulating activity. In this study, we further evaluated the anti-metastatic, anti-angiogenic and anti-tumor activities of THL with a series of in vitro and in vivo experiments. The migration and invasion of cancer cells and endothelial cells was determined by Boyden chamber transwell assays. The effect of THL on pulmonary metastasis was done by injecting CT-26 colon cancer cells intravenously to syngenic mice. The in vitro and in vivo microvessel formation was determined by the tube formation assay and the Matrigel plug assay, respectively. The in vivo anti-tumor effect of THL was determined by a human MDA-MB-231 breast cancer xenograft model. The expression of metalloproteinase (MMP)-2, MMP-9, and urokinase plasminogen activator (uPA) was measured by gelatin zymography. The expression of HIF-1α and the phosphorylation of ERK1/2 were determined by Western blot. THL inhibited the migration and invasion ability of various cancer cells in vitro, decreased the secretion of MMP-2, MMP-9, and uPA and the activity of ERK1/2 in cancer cells, and suppressed pulmonary metastasis of CT-26 cancer cells in syngenic mice. Moreover, THL inhibited the migration, invasion, and tube formation of endothelial cells in vitro, decreased the secretion of MMP-2 and uPA in endothelial cells, and suppressed neovascularization in Matrigel plugs in mice. Besides its inhibitory effect on endothelial cells, THL inhibited hypoxia-induced HIF-1α and vascular endothelial growth factor-A expression in cancer cells. Finally, our results show that THL

  13. Autonomous geodynamics of the Pamir-Tien Shan junction zone from seismology data

    Science.gov (United States)

    Lukk, A. A.; Shevchenko, V. I.; Leonova, V. G.

    2015-11-01

    The geodynamics of the Tajik Depression, the junction zone of the Pamirs and Tien Shan, is typically considered in the context of plate tectonic concept, which implies intense subhorizontal compression of the zone resulting from the subduction of the Indian and Eurasian lithospheric plates. This convergence has been reliably confirmed by the GPS measurements. However, the joint analysis of the geological structure, seismicity, and geodimeter measurements conducted during a few years at the Garm geodynamical testing site of the Schmidt Institute of Physics of the Earth, Russian Academy of Sciences, demonstrates a widening of the Tajik Depression instead of its shortening, as should be expected from the subhorizontal compression predominant in the present-day stress-state of this region. This conclusion, together with the data from the other regions, suggests that, along with the plate tectonic mechanisms, there are also other, local, autonomous drivers that contribute to the tectogenesis of this region. Besides, the probable existence of these autonomous sources within the Tajik Depression directly follows from the seismology data. Among them is the crustal spreading within the depression suggested by the seismotectonic displacements in the focal mechanisms of the earthquakes. These displacements are directed in different azimuths off the axial's most subsided part of the depression at a depth of 20-30 km. Above this region the distribution of seismotectonic deformations (STD) is chaotic. This pattern of deformation is barely accounted for by a simple model of subhorizontal compression of the Earth's crust in the region. In our opinion, these features of the seismotectonic deformation in the crust within the studied part of the Tajik Depression is probably associated with the gain in the volume of the rocks due to the inflow of the additional material, which is supplied from the bottom crust or upper mantle by the deep fluids. This increase in the rock volume

  14. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  15. Analysis of meteorological data and the surface energy balance of Keqicar Glacier, Tien Shan, China

    Science.gov (United States)

    Zhang, Y.; Liu, S.; Fujita, K.; Han, H.; Li, J.

    2009-04-01

    Northwestern China currently experiences a climate change with fundamental consequences for the hydrological cycle. In the strongly arid region where water resources are essential for agriculture and food production, glaciers represent important water resources, contributing significantly to streamflow. The debris is an important glaciological feature of the region and has major impact on melt rates. It is essential to understand and quantify the interaction of climate and sub-debris melt in order to assess the current situation and to predict future water yield. Note that the surface energy balance determines glacier melt. However, little is known about the variability characteristics of the surface energy fluxes in this region. For this reason, we set up two automatic weather stuation (AWSs) in the ablation area of Keqicar Glacier. Keqicar Glacier is located in the Tarim River basin (largest inland river basin in China), southwestern Tien Shan, China. It is a representative debris-covered glacier with a length of 26.0 km and a total surface area of 83.6 km2. The thickness of the debris layer varies from 0.0 to 2.50 m in general. In some places large rocks are piled up to several meters. In this study, we report on analysis of meteorological data for the period 1 July-13 September 2003, from two automatic weather stations, aimed at studying the relationship between climate and ablation. One station is located on the lower part of the ablation area where the glacier is covered by debris layer, and the other near the equilibrium line altitude (ELA). All sensors were sampled every 10 seconds, and data were stored as hourly averages. The stations were visited regularly for maintenance at two weeks intervals depending on the weather conditions and location of the AWS. A total of 17 ablation stakes were drilled into the glacier at different elevations to monitor glacier melt during the study period. Readings were taken regularly in connection with AWS maintenance. The

  16. Evaluación de un proyecto estratégico de administración de capacidad considerando flexibilidad operativa y opciones reales

    Directory of Open Access Journals (Sweden)

    Camilo Andrés Micán-Rincón

    2015-01-01

    Full Text Available El desarrollo competitivo empresarial se basa en la satisfacción de las necesidades cambiantes de los clientes, por lo cual las empresas deben integrar la flexibilidad en la toma de decisiones para adaptar rápidamente su sistema productivo a dichos cambios. Las decisiones estratégicas de inversión en administración de la capacidad son de gran importancia en este proceso, debido a su carácter financiero y de largo plazo, por consiguiente, es necesario que estas sean evaluadas con precisión. Este documento plantea la evaluación de estas decisiones involucrando la valoración de la flexibilidad, tanto operativa como financiera, en una empresa del sector papel en el Valle del Cauca. En relación con esto, se caracterizaron las decisiones y los criterios a tener en cuenta al momento de evaluarlas usando como base la revisión de bibliografía especializada y el juicio de expertos. Por último, mediante un caso de estudio se ejemplificó el modelo propuesto. Siguiendo esta metodología se deben tener en cuenta tanto los criterios cuantitativos como los cualitativos para la evaluación de proyectos estratégicos de administración de la capacidad, siendo al análisis de opciones reales un elemento fundamental para evaluar la flexibilidad de la decisión.

  17. ¿El sentido del humor, tiene sentido en el aula? / Does Sense of the Humor Make Sense in the Classroom?

    Directory of Open Access Journals (Sweden)

    Freddy Antonio González Ynfante

    2011-11-01

    Full Text Available Recibido 09 de junio de 2011 • Aceptado 24 de octubre de 2011 • Corregido 27 de setiembre de 2011 Resumen. El presente ensayo tiene como finalidad reflexionar sobre la importancia del humor pedagógico como estrategia de enseñanza aprendizaje en el aula; esto, tomando en cuenta la problemática de desmotivación y aburrimiento que sucede normalmente en la clase. Para plantear si “el enseñar contento y el aprender con alegría” pueden aumentar la eficacia en el proceso de enseñanza-aprendizaje, se abordará cómo, a pesar de las múltiples ventajas que puede aportar el humor en las aulas, se omite su empleo por la existencia de ciertos prejuicios y temores. La idea no es que los docentes hagan el papel de comediantes o payasos, sino la de mediar y acercar la clase de manera pedagógica y didáctica a través del uso del humor, y sobre esto reflexionaba Platón (1992, cuando planteaba que muchas veces ayudaba una broma, en donde la seriedad oponía resistencia. Abstract. This paper studies the importance of humor as a teaching strategy in the classroom, considering the usual lack of motivation and boredom. To analyze whether the “happy teaching and happy learning” may increase effectiveness in the teaching-learning process, the author will discuss how, despite the many benefits it may bring, humor is not used in the classroom due to prejudices and fears. The idea is not for teachers to play the role of a comedian or a clown, but to intervene and get closer to the group with a teaching, didactic purpose through humor. Plato (1992 thought about this; he used to say that sometimes a joke may help, where seriousness put up resistance.

  18. Dolarización, caja de conversión o tipo de cambio flexible. ¿Opciones para América Latina hoy?

    Directory of Open Access Journals (Sweden)

    Esmeralda Villegas

    2002-01-01

    Full Text Available El objetivo del presente artículo es el de describir las diferentes opciones de regímenes cambiarios para los mercados emergentes de América Latina; que van desde el tipo de cambio fijo, al flexible; con sus variantes como son la Caja de Conversión y la dolarización de la economía, en el contexto actual caracterizado por situaciones de persistente volatilidad de capital y crisis cambiaria. Se concluye que existen hoy más argumentos en contra de establecer durante mucho tiempo regímenes de tipo de cambio fijo, no solamente debido a las distorsiones y costos de la sobrevaluación de la moneda nacional, sino también por los costos que entraña su abandono, asimismo habría que sopesar los argumentos en contra de una excesiva flexibilidad que devendría en volatilidad del tipo de cambio; para ello cabe dar un espacio a que la autoridad pública intervenga, dando con su intervención una señal del tipo de cambio real que se considera conveniente, y reafirmar la importancia de desalentar los flujos de capitales externos especulativos. Se destaca con respecto a la proposición de la Caja de Conversión o de la Dolarización que son alternativas que privilegian la estabilidad monetaria, sacrificando otros objetivos macroeconómicos como el de la producción, el comercio, el empleo. Por lo cual es necesario actuar sobre determinantes fundamentales como son la disciplina fiscal, el avance en las reformas económicas; impulsando el progreso tecnológico que consiste en hacer más eficiente los procesos productivos a través de la inversión en tecnologías de punta.

  19. Desprendimiento seroso macular asociado a foseta papilar congénita y coloboma de papila: ¿Qué opciones terapéuticas tenemos?

    Directory of Open Access Journals (Sweden)

    Caridad Chiang Rodríguez

    Full Text Available La foseta papilar es una rara anomalía congénita que forma parte del espectro de las anormalidades congénitas del disco óptico. Se trata de invaginaciones intrapapilares que suelen localizarse en el margen del disco óptico. La mayoría se localiza a nivel temporal; en torno al 20 % son de localización central seguidas por las fosetas superiores, inferiores o nasales. La bilateralidad se estima en un 10-15 % y su incidencia se ha establecido en torno al 0,19 %. Suelen ser asintomáticas, aunque en aproximadamente el 50 % de los casos se produce afectación macular por el paso de fluido procedente desde la foseta papilar hacia las diferentes capas retinianas, lo que afecta secundariamente la agudeza visual y es, por tanto, el motivo de consulta. Hasta el momento se han descrito múltiples alternativas terapéuticas para el tratamiento de los desprendimientos de retina serosos asociados a foseta de papila, pero ninguna de estas alternativas se ha impuesto sobre el resto. El tratamiento de esta enfermedad consiste en cerrar la comunicación entre la foseta y el espacio subretiniano con diversas opciones terapéuticas como: la fotocoagulación láser, la neumoretinopexia, la indentación escleral posterior, la fenestración del nervio óptico, la vitrectomía o alguna combinación de las anteriores. La actual revisión bibliográfica se propone profundizar en el tema, sobre la base de pacientes en consulta con dicha afección retiniana.

  20. Enfoque de opciones reales para la valoración financiera de marcas Real Options Approach to Financial Valuation of Brands

    Directory of Open Access Journals (Sweden)

    Yessica González Londoño

    2012-12-01

    Full Text Available Los activos intangibles, especialmente las marcas, son parte fundamental del valor de mercado de las compañías, pues representan su ventaja competitiva; sin embargo, la Contabilidad y las Finanzas se enfrentan ante un reto difícil al momento de valorarlos. Los métodos de medición de intangibles en la literatura revisada se caracterizan por ser limitados y subjetivos, e incluso presentan algunos errores conceptuales, encontrándose su utilidad principal en el campo de la gestión. Este artículo propone una metodología para la valoración financiera de marcas a partir de una extensión de la aplicación de opciones reales compuestas de las patentes, aprovechando las similitudes en su construcción. Su aplicación se ilustra mediante la valoración de la marca de una compañía aseguradora.Intangible assets are an important component of the market value of a company, particularly in brands which represent the competitive advantage of the company; however, both Accounting and Finance face a great challenge when trying to value them. The methods which have been proposed by the literature appear to be subjective, limited, and based on some theoretical errors. Their use is mainly circumscribed to the management of intangibles. This paper proposes a methodology for the financial valuation of brands based on the application of a compound real option model to a patent valuation, acknowledging the similarities in their construction. Later, an application to an insurance company is presented.

  1. La falta de financiacion publica hipoteca el futuro del acelerador de protones valenciano. La Universidad de Valencia tiene avanzado el diseno de este dispositivo de alta tecnologia

    CERN Multimedia

    Jatvia, J M

    2002-01-01

    "La Universidad de Valencia tiene avanzado el diseno de un acelerador lineal de protones, cuya culminacion depende del compromiso del Consell en sufragar la plantilla que necesitaria el centro para estar operativo" (1 page).

  2. Du neuf dans les relations de l'Église orthodoxe avec les autres chrétiens

    OpenAIRE

    Famerée, Joseph

    2015-01-01

    Cette note évoque quatre réunions scientifiques (Athènes, Chambésy, Thessalonique, Iasi) qui, coup sur coup, de mai 2013 à mai 2014, ont permis à des Orthodoxes d’échanger avec d’autres chrétiens, catholiques notamment, sur des sujets théologiques et œcuméniques importants pour l’évolution des différentes Églises. Une nouvelle génération de théologiens orthodoxes se lève, osant parler librement à propos de leur Église et montrer l’écart entre l’Orthodoxie idéale et l’Orthodoxie réelle, spécia...

  3. Opciones reales como respuesta ante la valoración con flujo de caja libre en situaciones de incertidumbre: Caso de la compra de maquinaria en una empresa colombiana de consumo masivo

    OpenAIRE

    Donato Valdés, Nathalie; Forero Díaz, Nicolás

    2017-01-01

    El alto grado de incertidumbre de la economía actual impone retos y riesgos a las finanzas corporativas de cualquier compañía -- Encontrar alternativas que permitan la flexibilización de los modelos de evaluación de proyectos empresariales se constituye, en este sentido, en una de sus máximas tareas -- Una de estas alternativas es el método de valoración por Opciones Reales -- El presente estudio aplica dicho método a un proyecto de inversión en innovación tomando el caso de la compra de una ...

  4. Estudio Cinemático Comparativo de Tres Opciones de Tratamiento Conservador en el Manejo de los Trastornos de la Marcha de Niños con Equinismo Idiopático

    OpenAIRE

    Lerma Lara, Sergio

    2016-01-01

    Tesis Doctoral leída en la Universidad Rey Juan Carlos de Madrid en 2016. Directores de la Tesis: Carlos Goicoechea García y Tomás Epeldegui Torre El equinismo idiopático es una alteración de la marcha pediátrica caracterizada por la realización de una excesiva flexión plantar del tobillo durante la marcha. No hay consenso en la literatura acerca de la mejor oferta terapéutica, coexistiendo opciones conservadoras y quirúrgicas en la práctica clínica. El objetivo de este t...

  5. Valorización de la naturaleza y el territorio. Opciones teóricas-metodológicas para pensar otras territorialidades posibles

    Directory of Open Access Journals (Sweden)

    Silvia Valiente

    2016-06-01

    Full Text Available RESUMEN El objetivo de este artículo consiste en pensar otras territorialidades posibles a partir de considerar las distintas valorizaciones de la naturaleza y del territorio desde determinadas opciones teóricas. Estas sonla perspectiva decolonial, la ecología política y la ecología de los saberes, próximas entre sí en lo que respecta a su posicionamiento ético-político. Además comparten las críticas a la ciencia moderna en lo que refiere a la simplificación de la realidad, el conocimiento abstracto y normalizado. Toman distancia del pensamiento conservador, el que sólo se interesaba por preservar el orden y explicar las continuidades espacio-temporales. De igual modo toma distancia de la jerarquía de saberes o epistemicidios heredados de la modernidad. Proponen el conocimiento situado, el arte de la argumentación para la comprensión, el conocimiento en términos dialógicos, como opción metodológica. Desde estas aportaciones transdiciplinares actuales proponemos en este trabajo pensar las posibilidades que las mismas ofrecen para el reconocimiento y abordaje de otras territorialidades posibles, en el marco de las investigaciones en marcha vinculadas al modelo neoextractivo minero en Argentina. ABSTRACT The aim of this article is to think about other possible territorialities from considering the different appreciations of nature and the territory from certain theoretical options. These are the decolonial perspective, political ecology and ecology of knowledge, close to each other with respect to its ethical-political positioning. They also share criticism of modern science as regards simplification of reality, abstract and standardized knowledge. They take away the conservative thought, which was only interested in preserving order and explain the spatio-temporal continuities. Similarly it takes away from the hierarchy of knowledge or inherited epistemicidios of modernity. Propose situated knowledge, the art of argumentation

  6. Sistemas Integrados de energías con fuentes renovables, requisitos y opciones. Integrated systems of energy with renewable sources, requirements and options

    Directory of Open Access Journals (Sweden)

    Antonio Sarmiento Sera

    2015-04-01

    Full Text Available En el presente reporte se consideró una instalación conectada a la red eléctrica en la isla de Cuba. Se tenía el interés de introducir un determinado % de energía a partir de fuentes renovables, y se poseía un determinado potencial de energía eólica y fotovoltaica. Se analizaron los requisitos y opciones energéticas, se realizaron simulaciones de alternativas con el programa HOMER y se concluyó con la determinación de las condiciones o potenciales de las fuentes renovables para la recomendación de cada opción energética, y se presentaron los resultados de forma gráfica y fácil comprensión. Se ofreció un análisis de las posibilidades reales que en el ámbito de una localidad, pueden aprovecharse en función de diversificar de manera sostenible, el esquema energético comunitario  con la utilización de las fuentes renovables de energía, utilizando la variante que desde el punto económico y ambiental resulte de más conveniencia.  In this report was considered an electric net connected installation in the island of Cuba. It had the interest of introducing a certain % of energy starting from renewable sources, and a certain potential of wind and photovoltaic energy was possessed. The requirements and energy options were analyzed, and it were carried out simulations of alternative with the HOMER program and it was concluded with the determination of the conditions or potentials of the renewable sources for the recommendation of each energy option, and the results were presented in graphic way and easy understanding. It was offered an analysis of the real possibilities in the environment of a town. It can take advantage in function of diversifying from a sustainable way, with the community energy outline using the renewable sources of energy, and taking the variant of more convenience from the economic and environmental point of view.

  7. Une catastrophe glorieuse : le martyre des premiers chrétiens du Japon, Nagasaki, 1597

    Directory of Open Access Journals (Sweden)

    Clotilde Jacquelard

    2011-11-01

    Full Text Available Le naufrage du galion San Felipe dans le port de Urado (Shikoku, Japon en octobre 1596 fut le déclencheur d’un désastre missionnaire : le martyre de vingt-six chrétiens, franciscains espagnols et chrétiens japonais, à Nagasaki, le 5 février 1597. Cet article s’attache à examiner la relation dialectique entre les deux événements par l’étude de deux discours missionnaires franciscains hagiographiques. Il s’agit tout d’abord de rappeler la lecture providentialiste du temps à travers la perception de présages matériels et spirituels de la part des acteurs, puis de montrer que ces évènements paroxystiques révèlent en même temps qu’ils résolvent – temporairement – des tensions et des crises latentes, résultat de la confrontation entre plusieurs communautés culturelles comme la japonaise, l’espagnole et la portugaise, autour de prétentions géopolitiques, commerciales et religieuses dans cette zone de frontière de l’antiméridien du Pacifique nord.El naufragio del galeón San Felipe en el puerto de Urado (Shikoku, Japón en octubre de 1596 desembocó en un desastre misionero : el martirio de veintiséis cristianos, franciscanos españoles y cristianos japoneses, en Nagasaki, el 5 de febrero de 1597. Este artículo quiere examinar la relación dialéctica entre ambos acontecimientos, mediante el estudio de dos discursos misioneros franciscanos hagiográficos. Se trata de recordar primero la lectura providencialista de la época a través de la percepción de presagios tanto materiales como espirituales por parte de los actores, y mostrar luego que estos acontecimientos paroxísticos revelan, al mismo tiempo que resuelven –temporalmente– tensiones y crisis latentes, resultados de la confrontación de varias comunidades culturales como la japonesa, la española y la portuguesa, en torno a pretensiones geopolíticas, comerciales y religiosas en la zona fronteriza del antimeridiano del Pacífico norte.

  8. Educación del usuario. La pedagogía del caballo que no tiene sed

    OpenAIRE

    Valls Molins, Roser; Isla Pera, Ma. Pilar (María Pilar); López Matheu, Carme

    1995-01-01

    La educación del paciente constituye un rol importantísimo de la Enfermería, pero sólo se podrán conseguir las metas preventivas y de apoyo si la metodología empleada satisface las necesidades del cliente y está en consonancia con sus valores culturales y creencias.

  9. Un modelo de opciones barreras para estimar las probabilidades de fracasos financieros de empresas. Barrier options model for estimate firm´s probabilities for financial distress

    Directory of Open Access Journals (Sweden)

    Gastón S. Milanesi

    2016-11-01

    Full Text Available Resumen Asimilar el valor del patrimonio como una opción de compra sobre los activos permitió desarrollar un conjunto de modelos dinámicos para predecir fracasos financieros empresariales. No obstante, el concepto presenta una importante debilidad: la relación directa y positiva entre valor del capital (prima y el nivel de volatilidad del activo subyacente. El razonamiento anterior indica que a mayor riesgo de la firma mayor debe ser su valor, lo que conduce a una lógica inconsistente para estimar probabilidades de fracasos financieros. Las opciones denominadas “exóticas barreras” constituyen un modelo alternativo para predecir dificultades financieras y su estructura se ajusta mejor a la relación valor-volatilidad en las empresas. El trabajo propone un modelo de opción barrera “operativo”, ya que simplifica la estimación de las inobservables variables: valor y riesgo del activo. Primero, se desarrolló formalmente los modelos de opción de compra simple y opción barrera para valorar el patrimonio de la firma y la estimación de probabilidades de fracaso financiero. Con un caso hipotético, se propuso un ejercicio de sensibilidad sobre volatilidades y plazos. Similar ejercicio se aplicó a dos firmas de capitales argentinos con diferentes grados de endeudamiento, gracias al cual se confirmó la consistencia entre volatilidad-valor-probabilidad de fracasos financieros del modelo propuesto. Finalmente se exponen las principales conclusiones.     Abstract Assimilation of the capital value as a call option over firm’s assets allows to develop a group of dynamic models to predict corporate financial distress. However, the concept shows an important weakness: the direct and positive relationship between the capital value (call with the level of underlying’s volatility. This reasoning indicates that the higher the risk is, the higher the value must be for the firm, leading to a weak rationality, in particular to estimate

  10. Tectonically controlled relief evolution in the Northern Tien Shan and Junggar Alatau from the Eocene to the Present

    Science.gov (United States)

    Seib, N.; Kley, J.; Voigt, T.; Kober, M.

    2012-04-01

    The Cenozoic Tien Shan and Junggar Alatau mountains developed on the southern part of the Paleozoic Altaid orogen as a far-field effect of the collision of the Indian and Eurasian plates. Highland terrain, active seismicity, and fast GPS-derived motions are evidence of rapid ongoing mountain growth today. Variations in relief energy, hight-to-width ratio of ranges and apatite fission track (AFT) exhumation ages suggest they rose at different times. The strong dissection of the higher ridges (heights of up to 2km), indicates an earlier onset and higher rates of uplift. At the other end of the spectrum are low, little dissected ridges. According to AFT ages, exhumation in the Junggar Range began at 9 Ma (Jolivet et al., 2010), circa 11 Ma in the central Kyrgyz Range (Sobel et al., 2006) and 10 Ma in the Terskey Alatau. An AFT age of the low Sogety range is 77 Ma, suggesting that the Cenozic exhumation of the ridge was insufficient to expose rocks from below c.3 km depth. The synclinal lows between the basement highs preserve Cenozoic strata of Eocene to Quaternary age, probably deposited in a once continuous basin (the Ili Basin) and recording the entire history of Tien Shan uplift. Facies pattern of proximal alluvial fans are strictly related to the recent higher mountain areas in the north and in the south. During Middle Miocene, a large lake developed in the basin center. Up to the Middle Miocene sedimentation was accompanied by normal faulting of small magnitude. The main Cenozoic folding and thrusting occurred after that time and before deposition of the Chorgos formation. Shortening was accommodated by reactivation of inherited basement structures, by a switch to reverse or strike-slip motion on normal faults, and the nucleation of new thrusts. The majority of faults which emplace basement rocks over upper Cenozoic sediments dip steeply at angles of 60-70˚, and some have throws of more than 200 m. They are marked by topographic steps and contrasting morphology

  11. Los orígenes del grial en la literatura medieval: de Chrétien de Troyes a Robert de Boron

    Directory of Open Access Journals (Sweden)

    Mario Martín Botero

    2010-12-01

    Full Text Available Este artículo muestra el origen literario del tema del Grial en la literatura medieval francesa, abordando dos textos esenciales para el surgimiento y consolidación de la “literatura del Grial”: Le Conte du Graal de Chrétien de Troyes y Le Roman de l’Estoire dou Graal de Robert de Boron. Los autores de estas obras establecen las bases para el desarrollo de toda una temática que gira alrededor del Grial a partir del siglo XII hasta nuestros días. El artículo muestra cómo de un objeto apenas sagrado en el texto de Chrétien de Troyes se pasa a una reliquia de la sangre de Cristo en la versión de Robert de Boron.This paper studies the literary origin of the Grail legend in medieval French literature, taking into account two important romances: Le Conte du Graal by Chrétien de Troyes and Le Roman de l’Estoire dou Graal by Robert de Boron. In these two texts the authors established the basis for the development of a new subject matter around the mysterious object called “Grail” from the Middle Ages to the present times. It will also be shown how an object, not totally sacred in Chrétien de Troyes, becomes a relic related with Jesus’s blood in Robert de Boron.

  12. Aplicación de Opciones Reales a la Valuación de Proyectos en Empresas Pequeñas y Medianas y su Estructura de Capital-Edición Única

    OpenAIRE

    Sara Barajas Cortés

    2006-01-01

    En este trabajo de investigación se desarrolla la valuación de un proyecto de inversión de una Pyme mexicana, dicho proyecto consiste en el diseño, comercialización e implantación de soluciones especializadas de tecnología de información en el sector de seguridad pública. Para llevar a cabo la aplicación de la metodología de opciones reales en este caso real, sirvió de guía el método del caso, ya que la mayor parte de la investigación fue de campo. El proyecto fue evaluad...

  13. Permian charnockites in the Pobeda area: Implications for Tarim mantle plume activity and HT metamorphism in the South Tien Shan range

    Science.gov (United States)

    Loury, Chloé; Rolland, Yann; Lanari, Pierre; Guillot, Stéphane; Bosch, Delphine; Ganino, Clément; Jourdon, Anthony; Petit, Carole; Gallet, Sylvain; Monié, Patrick; Riel, Nicolas

    2018-04-01

    The Permian history of the Central Asian Orogenic belt is marked by large-scale strike-slip faults that reactivate former Paleozoic structures, delineated by widespread alkaline magmatism. The genetic link between the syn-kinematic granitoids emplaced in the Tien Shan range and magmas emplaced within the Tarim Large Igneous Province, and the interaction between this plume and transcurrent tectonics, are still unsolved issues. We investigated the Pobeda massif, in the eastern Kyrgyz Tien Shan, located at the boundary between the Tien Shan range and the Tarim Craton, which exhibits a high-temperature unit. In this unit, Permian magmatism resulted in the emplacement of alkaline charnockites at mid-crustal levels. The primary mineralogical assemblage is nominally anhydrous and made of ortho- and clino-pyroxenes, fayalite, K-feldspar, plagioclase and quartz. These charnockites are associated with partially-molten paragneisses and marbles. Thermobarometry on these rocks indicates that the charnockites emplaced following the intrusion of a melt at a temperature > 1000 °C and pressure of around 6 kbar, corresponding to depth of 20 km. The resulting thermal anomaly triggered the partial melting of paragneisses. Bulk geochemistry including Sr, Nd, Pb and Hf isotopes suggests that charnockites fit into the Tarim Large Igneous Province magmatic series, with minor crustal assimilation. U-Pb ages on zircons of charnockites and surrounding paragneisses indicate that charnockites intruded and triggered partial melting of the gneisses at c. 287, 275 and 265 Ma. 40Ar/39Ar dating on amphibole gives a similar age as the U-Pb age at 276.2 ± 2.0 Ma. 40Ar/39Ar dating on biotite from the Charnockite unit marbles gives ages at ca. 256-265 Ma, which shows that exhumation onset directly follows the HT history, and is tentatively correlated to top-to-the-North thrusting of the Charnockite unit in a transpressive context. Additional 40Ar/39Ar dating on syn-kinematic white micas from an

  14. Devonian paleomagnetism of the North Tien Shan: Implications for the middle-Late Paleozoic paleogeography of Eurasia

    Science.gov (United States)

    Levashova, Natalia M.; Mikolaichuk, Alexander V.; McCausland, Philip J. A.; Bazhenov, Mikhail L.; Van der Voo, Rob

    2007-05-01

    The Ural-Mongol belt (UMB), between Siberia, Baltica and Tarim, is widely recognized as the locus of Asia's main growth during the Paleozoic, but its evolution remains highly controversial, as illustrated by the disparate paleogeographic models published in the last decade. One of the largest tectonic units of the UMB is the Kokchetav-North Tien Shan Domain (KNTD) that stretches from Tarim in the south nearly to the West Siberian Basin. The KNTD comprises several Precambrian microcontinents and numerous remnants of Early Paleozoic island arcs, marginal basins and accretionary complexes. In Late Ordovician time, all these structures had amalgamated into a single contiguous domain. Its paleogeographic position is of crucial importance for elucidating the Paleozoic evolution of the UMB in general and of the Urals in particular. The Aral Formation, located in Kyrgyzstan in the southern part of the KNTD, consists of a thick Upper Devonian (Frasnian) basalt-andesite sequence. Paleomagnetic data show a dual-polarity characteristic component (Dec/Inc = 286° / + 56°, α95 = 9°, k = 21, N = 15 sites). The primary origin of this magnetization is confirmed by a positive test on intraformational conglomerates. We combine this result with other Paleozoic data from the KNTD and show its latitudinal motion from the Late Ordovician to the end of the Paleozoic. The observed paleolatitudes are found to agree well with the values extrapolated from Baltica to a common reference point (42.5°N, 73°E) in our sampling area for the entire interval; hence coherent motion of the KNTD and Baltica is strongly indicated for most of the Paleozoic. This finding contradicts most published models of the UMB evolution, where the KNTD is separated from Baltica by a rather wide Ural Ocean containing one or more major plate boundaries. An exception is the model of Şengör and Natal'in [A.M.C. Şengör, B.A. Natal'in, Paleotectonics of Asia: fragments of a synthesis, in: A. Yin and M. Harrison (eds

  15. Jeux et enjeux d’écriture chez Chrétien de Troyes: l’exemple de «Cligès»

    Directory of Open Access Journals (Sweden)

    Ida Lucia Machado

    2011-10-01

    Full Text Available Neste artigo, nos propomos descrever a estética da trama irônica presente na escritura de Chrétien de Troyes, tomando por base seu romance Cligès. A destacar algumas estratégias passíveis de criar o fenômeno irônico, estaremos também mostrando o poder de sedução que emana desta escritura.Nous nous proposons, dans cet artible, de décrire l’esthétique du jeu ironique chez Chrétien de Troyes, em puisant dans son roman Cligès. Enn dégageant qulques unes dês stratégies susceptibles de créer le phénomène ironique, nous montrerons, à la fois, le pouvoir de séduction qui emane de cette écriture.

  16. ESTUDIO COMPARATIVO DEL EFECTO DE ZHONGJI (RM3) MOXADO MAS PUNTOS REGULARES VS PUNTOS REGULARES EN PACIENTES CON NEUROPATIA DIABETICA -NO TIENE CARATULA-

    OpenAIRE

    LERMA GARCIA, HECTOR ALFONSO

    2010-01-01

    ANTECEDENTES: DESDE LA ANTIGUEDAD SE HA COMPROBADO LA EFECTIVIDAD DE LA ACUPUNTURA PARA EL TRATAMIENTO DEL DOLOR Y PARA LA DIABETES EN EL SER HUMANO. OBJETIVO: EL PRESENTE ESTUDIO TIENE COMO OBJETIVO ANALIZAR EL EFECTO DEL TRATAMIENTO DEL DOLOR Y ALTERACIONES SENSITIVAS EN PACIENTES CON NEUROPATIA DIABETICA. METODO: SE ESTUDIARON TREINTA PACIENTES CON UN DIAGNOSTICO DE NEUROPATIA DIABETICA LOS CUALES SE DIVIDIERON EN TRES GRUPOS A LOS CUALES SE LES APLICO EN EL GRUPO 1 ZHONG...

  17. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  18. Efecto del dopado con Si sobre la estructura de defectos en sistemas heteroepitaxiales GaN/AlN/Si(111

    Directory of Open Access Journals (Sweden)

    Sánchez, A. M.

    2000-08-01

    Full Text Available The Si doping effect on the defect structure in GaN epilayers grown by molecular beam epitaxy on Si(111 substrates using AlN buffer layers has been studied. Transmission electron microscopy and related techniques have been used to carry out the structural characterization. The Si doping affects both the subgrain size and misorientation in GaN epilayer mosaic structure. The Si doping also leads to an increase of the planar defect density, as well as a decrease of the threading dislocation density. The enlargement of the subgrain tilt and the planar defect density explain the reduction of the dislocation density reaching the GaN free surface.

    En el presente artículo se lleva a cabo el análisis del efecto que el dopado con Si tiene sobre la estructura de defectos en epicapas de GaN crecidas por epitaxia de haces moleculares sobre sustratos de Si (111 utilizando capas amortiguadoras de AlN. La caracterización estructural se llevó a cabo mediante microscopía electrónica de transmisión convencional y de alta resolución. El dopado con Si afecta a la desorientación y tamaño de los subgranos que constituyen la estructura mosaico de la epicapa de GaN. El dopado con Si provoca un aumento en la densidad de defectos planares, así como una disminución en la densidad de dislocaciones de propagación. El incremento en el grado de desorientación de inclinación, así como en la densidad de defectos planares que se produce conforme aumenta el dopado con Si explican la disminución en la densidad de dislocaciones que alcanzan la superficie libre de GaN.

  19. Sexual violence and the risk of HIV transmission in sexual partners of male injecting drug users in Tien Du district, Bac Ninh province of Vietnam.

    Science.gov (United States)

    Do, Vinh Thi; Ho, Hien Thi; Nguyen, Tri Manh; Do, Huynh Khac

    2018-04-01

    We conducted a cross-sectional study among 148 women who were regular sexual partners of male injecting drug users in Tien Du, Bac Ninh province, Vietnam to identify the rate of HIV infection and factors associated with HIV transmission among them. HIV infection rate among sexual partners was high, 11.5%. Sexual violence was prevalent, 63.5% among sexual partners; 94.1% (16/17) among those with HIV. We discovered an association between sexual violence and HIV infection. Sexual partners suffering from sexual violence caused by their regular sexual partners faced 9.24 times higher HIV risk than those who did not have sexual violence.

  20. Los enigmas del Grial. En torno a la polémica sobre la unidad de El Cuento del Grial de Chrétien de Troyes

    Directory of Open Access Journals (Sweden)

    Victoria Cirlot

    2014-12-01

    Full Text Available Relectura de la polémica acerca de la unidad del último roman de Chrétien de Troyes, Li Contes del Graal que tuvo lugar a finales de los años cincuenta entre Martín de Riquer, Jean Frappier y Erich Köhler. Más de cincuenta años después se trata de valorar las aportaciones que dicha polémica supuso para la filología románica y, en concreto, para la valoración de la última obra del escritor de la Champaña.

  1. Orelhas de elefante, olhos de coruja, dentes de javali: maravilhoso e descritivo em Yvain ou le chevalier au lion, de Chrétien de Troyes

    OpenAIRE

    Luis Claudio Kinker Caliendo

    2009-01-01

    No final do século XII, Chrétien de Troyes considerado por muitos críticos o maior poeta francês da chamada Idade Média compõe um poema narrativo Yvain ou le Chevalier au Lion no qual se percebem elementos tidos como característicos do gênero maravilhoso, tais quais objetos mágicos e seres extraordinários, como monstros e gigantes. Esses elementos entre outros fatores levaram boa parte da crítica a enxergar na poesia medieval, durante muito tempo, uma certa ingenuidade, típica de uma in...

  2. Paleo-Climate and Glaciological Reconstruction in Central Asia through the Collection and Analysis of Ice Cores and Instrumental Data from the Tien Shan

    International Nuclear Information System (INIS)

    Vladimir Aizen; Donald Bren; Karl Kreutz; Cameron Wake

    2001-01-01

    While the majority of ice core investigations have been undertaken in the polar regions, a few ice cores recovered from carefully selected high altitude/mid-to-low latitude glaciers have also provided valuable records of climate variability in these regions. A regional array of high resolution, multi-parameter ice core records developed from temperate and tropical regions of the globe can be used to document regional climate and environmental change in the latitudes which are home to the vase majority of the Earth's human population. In addition, these records can be directly compared with ice core records available from the polar regions and can therefore expand our understanding of inter-hemispheric dynamics of past climate changes. The main objectives of our paleoclimate research in the Tien Shan mountains of middle Asia combine the development of detailed paleoenvironmental records via the physical and chemical analysis of ice cores with the analysis of modern meteorological and hydrological data. The first step in this research was the collection of ice cores from the accumulation zone of the Inylchek Glacier and the collection of meteorological data from a variety of stations throughout the Tien Shan. The research effort described in this report was part of a collaborative effort with the United State Geological Survey's (USGS) Global Environmental Research Program which began studying radionuclide deposition in mid-latitude glaciers in 1995

  3. Paleo-Climate and Glaciological Reconstruction in Central Asia through the Collection and Analysis of Ice Cores and Instrumental Data from the Tien Shan

    Energy Technology Data Exchange (ETDEWEB)

    Vladimir Aizen; Donald Bren; Karl Kreutz; Cameron Wake

    2001-05-30

    While the majority of ice core investigations have been undertaken in the polar regions, a few ice cores recovered from carefully selected high altitude/mid-to-low latitude glaciers have also provided valuable records of climate variability in these regions. A regional array of high resolution, multi-parameter ice core records developed from temperate and tropical regions of the globe can be used to document regional climate and environmental change in the latitudes which are home to the vase majority of the Earth's human population. In addition, these records can be directly compared with ice core records available from the polar regions and can therefore expand our understanding of inter-hemispheric dynamics of past climate changes. The main objectives of our paleoclimate research in the Tien Shan mountains of middle Asia combine the development of detailed paleoenvironmental records via the physical and chemical analysis of ice cores with the analysis of modern meteorological and hydrological data. The first step in this research was the collection of ice cores from the accumulation zone of the Inylchek Glacier and the collection of meteorological data from a variety of stations throughout the Tien Shan. The research effort described in this report was part of a collaborative effort with the United State Geological Survey's (USGS) Global Environmental Research Program which began studying radionuclide deposition in mid-latitude glaciers in 1995.

  4. Fluxes of 10-2000 GeV hadrons in EAS produced by 1-100 PeV PCR according to Tien Shan data

    International Nuclear Information System (INIS)

    Nesterova, N.M.; Pavlyuchenko, V.P.; Chubenko, A.P.; Shchepetov, A.L.; Mukhamedshin, R.A.

    2005-01-01

    The experimental data on the hadrons spectra with the energy of 10-2000 GeV in the extensive air showers with the electrons number N e =3 x 10 5 -10 8 at the distances of 3-60 m from the axis are obtained at the Tien-Shan mountainous facility (690 g/cm 2 ) by means of the 18NM64 neutron monitor and ionization calorimeter. The obtained results are compared with the calculations by the MS0-model. The comparison shows that the singular hadrons experimental number significantly exceeds the calculational value. This may be brought by the change in the PCR character and its interaction with the air atoms nuclei by the energies above several PeV [ru

  5. Registration of intensive hard X-rays and soft gamma-rays from the thunderstorm clouds at Tien-Shan installation Adron

    International Nuclear Information System (INIS)

    Antonova, V.P.; Kryukov, S.V.; Vil'danova, L.I.; Gurevich, A.V.; Zybin, K.P.; Kokobaev, M.M.; Nesterova, N.M.; Piskal', V.V.; Ptitsyn, M.O.; Chubenko, A.P.; Shchepetov, A.L.

    2001-01-01

    The Adron installation mounted at the Tien-Shan station is intended for studying the extensive air showers. The Adron installation consists of a neutron supermonitor charged particles detector, muon detector and detector for registering the hard X-ray and soft gamma-radiation from the thunderstorm clouds accomplished on the basis of the Geiger-Mueller counters with sensitivity area of 16-17 m 2 . The intensive fluxes of the hard X-ray and soft gamma-radiation from the thunderstorm clouds passing over the Adron installation at the height below 1 km are registered using this installation. The short-time radiation flares of 1-5 min duration are separated at the background of the intensity slow change. This testifies to the benefit of existence of the runaway electron effect in the thunderstorm clouds [ru

  6. Effect of the muon component of cosmic rays on the results of hadron experiments with the big ionization calorimeter (BIC) of the Tien Shan station

    Energy Technology Data Exchange (ETDEWEB)

    Bogdanov, A. G., E-mail: AGBogdanov@mephi.ru; Kokoulin, R. P.; Petrukhin, A. A.; Shalabaeva, A. V. [Moscow Engineering Physics Institute (State University) (Russian Federation); Yakovlev, V. I. [Russian Academy of Sciences, Lebedev Institute of Physics (Russian Federation)

    2008-01-15

    A full-scale simulation of the response of the big ionization calorimeter (BIC) at the Tien Shan station to the passage of single protons and muons was performed on the basis of the GEANT4 package in order to estimate the contribution of the muon cosmic-ray component to the generation of unusual events (such as Anti-Centauros), which were recorded by this facility, and to the imitation of the long-flying component, which changes the shape of the average cascade curve. A comparison of the results of this simulation with experimental data reveals that the appearance of Anti-Centauros may be reasonably explained by the contribution of multiple interactions of single muons, but that muon events are insufficient for explaining the change in the shape of the cascade curve (in particular, the emergence of a second maximum).

  7. A 'college of astrology and medicine'? Charles V, Gervais Chrétien, and the scientific manuscripts of Maître Gervais's College.

    Science.gov (United States)

    Boudet, Jean-Patrice

    2010-06-01

    Considered an institution mainly devoted to astrology and medicine by Simon de Phares and by some historians who believe that he was reliable, the college founded in 1371 by Charles V's first physician, Gervais Chrétien, was in fact primarily dedicated to theological students. It was not before 1377 that there were created there two bursaries for scholares regis, specialising in 'licit mathematical sciences', and two medical fellowships. Yet the influence of the activity of these fellows seems to have been rather moderate and-as far as we can learn from the material still extant, notably from manuscripts that belonged to Maître Gervais' College and to some of its members-this institution was devoted much more to theological studies than to medicine and the quadrivium.

  8. La Investigación con Relatos de Vida: Pistas y Opciones del Diseño Metodológico Research with Life Stories: Clues and Options of the Methodological Design

    Directory of Open Access Journals (Sweden)

    Marcela Cornejo

    2008-05-01

    Full Text Available En la investigación en ciencias sociales, la utilización del relato de vida ha mostrado importantes desarrollos, permitiendo articular significados subjetivos de experiencias y prácticas sociales. Son variados los trabajos que muestran resultados de investigaciones, así como variados aquéllos que discuten esta particular forma de concebir y articular conceptualmente las dimensiones subjetiva y social. La literatura sin embargo, ha soslayado aspectos del proceso de diseño e implementación de una investigación con relatos de vida. Este artículo intenta visibilizar estos aspectos, a la luz de las premisas que sustentan la investigación desde un enfoque biográfico. Se presenta un dispositivo de trabajo implementado en investigaciones realizadas, discutiendo a partir de él las opciones metodológicas tomadas, sugiriendo modos de abordar investigaciones con relatos de vida.In social sciences research, the use of life stories has developed greatly allowing for the articulation of subjective meanings of social practices and experiences. There are several studies that show their findings as there is a variety of such pieces of research that discuss this particular way of conceptually conceiving and articulating subjective and social dimensions. The literature has, however, avoided analyzing aspects of the process of design and implementation of research based on life stories. In this paper there is an attempt to bring these aspects to the forefront, in light of the premises that underlie research from a biographical approach. A working device applied in previous research is presented, with discussion on methodological decisions and suggestions on how to approach research on life stories.

  9. Opciones de conservación y liquidación de los bienes del deudor en el derecho uruguayo vigente: el caso de las sociedades anónimas

    Directory of Open Access Journals (Sweden)

    Eva Holz

    2014-03-01

    Full Text Available Incuestionablemente, del punto de vista empresarial, y los efectos de obtener el mayor valor posible en la realización de los activos de la sociedad anónima deudora en el procedimiento concursal, objetivo que precisamente satisface el interés de todos los acreedores- beneficiarios últimos del resultado de la liquidación -, la flexibilidad en las vías alternativas de realización activo es crucial. A partir de esa afirmación, qué opciones de liquidación son admisibles para nuestra vetusta legislación vigente (ley 2.230 de junio de 1893 y simultáneamente protegen a un eventual adquirente de la acción de los acreedores de la sociedad deudora? Desde ya anticipamos nuestra conclusión, en el sentido de que existen otras vías alternativas a la del remate para la liquidación de los bienes del deudor. Analicemos algunas, descartando desde ya todas aquellas vías que implican la adquisición de activos y pasivos, como podría ser la compraventa de acciones. De lege ferenda, el proyecto de ley de Declaración Judicial del Concurso y Reorganización Empresarial que cuenta con media sanción parlamentaria, determina con claridad que cualquiera sea el procedimiento de realización de los activos del deudor, el adquirente de los mismos no podrá ser perseguido por ninguna especie de acreedor de aquél

  10. Search for EAS radio-emission at the Tien-Shan shower installation at a height of 3340 m above sea level

    Science.gov (United States)

    Beisenova, A.; Boos, E.; Haungs, A.; Sadykov, T.; Salihov, N.; Shepetov, A.; Tautayev, Y.; Vildanova, L.; Zhukov, V.

    2017-06-01

    The complex EAS installation of the Tien Shan mountain cosmic ray station which is situated at a height of 3340 m above sea level includes the scintillation and Cherenkov detectors of charged shower particles, an ionization calorimeter and a set of neutron detectors for registering the hadronic component of the shower, and a number of underground detectors of the penetrative EAS component. Now it is intended to expand this installation with a promising method for detecting the radio-emission generated by the particles of the developing shower. The facility for radio-emission detection consists of a three crossed dipole antennae, one being set vertically, and another two - mutually perpendicularly in a horizontal plane, all of them being connected to a three-channel radio-frequency amplifier of German production. By the passage of an extensive air shower, which is defined by a scintillation shower detector system, the output signal of antenna amplifier is digitized by a fast multichannel DT5720 ADC of Italian production, and kept within computer memory. The further analysis of the detected signal anticipates its operation according to a special algorithm and a search for the pulse of radio-emission from the shower. A functional test of the radio-installation is made with artificial signals which imitate those of the shower, and with the use of a N1996A type wave analyzer of Agilent Technologies production. We present preliminary results on the registration of extensive air shower emission at the Tien Shan installation which were collected during test measurements held in Summer 2016.

  11. SI units in radiology

    Energy Technology Data Exchange (ETDEWEB)

    Iyer, P S [Bhabha Atomic Research Centre, Bombay (India). Div. of Radiation Protection

    1978-11-01

    The proposal of the International Commission on Radiation Units and Measurements that the special units of radiation and radioactivity-roentgen, rad, rem and curie-be replaced by the International System (SI) of Units has been accepted by international bodies. This paper reviews the resons for introducing the new units and their features. The relation between the special units and the corresponding SI units is discussed with examples. In spite of anticipated difficulties, the commission recommends a smooth and efficient changeover to the SI units in ten years.

  12. Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

    International Nuclear Information System (INIS)

    Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

    2011-01-01

    The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

  13. Sífilis una enfermedad que puede producir serias complicaciones en el organismo y producir la muerte. Puede detectarse a tiempo y tiene cura

    OpenAIRE

    Portilla, José Luis

    2009-01-01

    La sífilis es una ETS que puede causar complicaciones a largo plazo o la muerte, si no se trata de manera adecuada. Los síntomas en los adultos se dividen en fases. Estas fases son sífilis primaria, secundaria, latente y avanzada.

  14. Elimination of Cancer Stem-Like “Side Population” Cells in Hepatoma Cell Lines by Chinese Herbal Mixture “Tien-Hsien Liquid”

    Directory of Open Access Journals (Sweden)

    Chih-Jung Yao

    2012-01-01

    Full Text Available There are increasing pieces of evidence suggesting that the recurrence of cancer may result from a small subpopulation of cancer stem cells, which are resistant to the conventional chemotherapy and radiotherapy. We investigated the effects of Chinese herbal mixture Tien-Hsien Liquid (THL on the cancer stem-like side population (SP cells isolated from human hepatoma cells. After sorting and subsequent culture, the SP cells from Huh7 hepatoma cells appear to have higher clonogenicity and mRNA expressions of stemness genes such as SMO, ABCG2, CD133, β-catenin, and Oct-4 than those of non-SP cells. At dose of 2 mg/mL, THL reduced the proportion of SP cells in HepG2, Hep3B, and Huh7 cells from 1.33% to 0.49%, 1.55% to 0.43%, and 1.69% to 0.27%, respectively. The viability and colony formation of Huh7 SP cells were effectively suppressed by THL dose-dependently, accompanied with the inhibition of stemness genes, e.g., ABCG2, CD133, and SMO. The tumorigenicity of THL-treated Huh7 SP cells in NOD/SCID mice was also diminished. Moreover, combination with THL could synergize the effect of doxorubicin against Huh7 SP cells. Our data indicate that THL may act as a cancer stem cell targeting therapeutics and be regarded as complementary and integrative medicine in the treatment of hepatoma.

  15. Population genetic diversity and structure analysis of wild apricot (Prunus armeniaca L.) revealed by ssr markers in the Tien-Shan mountains of China

    International Nuclear Information System (INIS)

    Hu, X.; Ni, B.; Zheng, P.; Li, M.

    2018-01-01

    The simple sequence repeat markers were used to investigate the population genetic diversity and structure of 212 germplasm samples from 14 apricot (Prunus armeniaca) populations in the western of Tien-Shan Mountains, Sinkiang, China. The relatively high expected heterozygosity and Shannon's diversity index indicated the apricot populations maintained a high level of genetic diversity (He = 0.6109, I = 1.2208), with the population in Tuergen ditch of Xinyuan County having the highest genetic diversity index. A high level of intra-population genetic differentiation (91.51%) and a lower level of inter-population genetic differentiation were occurred, as well as a moderate but steady inter-population gene flow (Nm = 2.3735). The self-incompatible pattern, wide distribution, and long-distance pollen transmission via insects and gale are the main factors underlying the genetic variation structure. The UPGMA cluster analysis and genetic structure analysis showed that apricot germplasm could be divided into two or four groups, which was basically consistent with the geographic distribution pattern. The inter-population genetic distance and geographic distance showed a significant correlation (r = 0.2658, p<0.05). (author)

  16. La Fábula Ovidiana de Filomela revisada por la Edad Media: de Chrétien de Troyes a Alfonso x

    Directory of Open Access Journals (Sweden)

    Mario Martín Botero García

    2014-12-01

    Full Text Available En este trabajo se expone el contraste entre las dos traducciones al francés y al castellano de Filomela, una de las fábulas de las Metamorfosis de Ovidio, realizadas en los siglos xii y xiii por Chrétien de Troyes y Alfonso X. Por medio del análisis y cotejo de tres momentos narrativos, veremos la forma en que la materia antigua es tratada según el contexto determinado en el que se producen las traducciones. La versión francesa hace énfasis en una dimensión cortés en donde el personaje femenino es altamente valorado; por su parte, la versión castellana reivindica una racionalización de la fábula ovidiana, supeditada a una visión política e histórica. Se puede constatar así que las traducciones medievales no son serviles con respecto a la fuente latina sino que demuestran una gran libertad en la selección y combinación de elementos.

  17. Interfacial characterization of CVI-SiC/SiC composites

    International Nuclear Information System (INIS)

    Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

    2002-01-01

    The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

  18. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  19. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  20. “Usted no está completo si no tiene casa propia”: El acceso a la vivienda en el Área Metropolitana de San José: Clases medias, urbanizaciones, residenciales y condominios (1950-2011.

    Directory of Open Access Journals (Sweden)

    Roberto Antonio Blanco Ramos

    2017-12-01

    Full Text Available El siguiente artículo analiza el proceso histórico del acceso a la vivienda en el en el Área Metropolitana de San José, que realizaron los sectores medios y populares, en el periodo de 1950-2011. Se parte de la hipótesis de que tanto el Estado como la iniciativa privada (inmobiliarias incidieron en la formación de segregación socio espacial, al proyectar diversos planes habitacionales. El estudio inicia desde el decenio de 1950, debido a que ocurren cambios a nivel urbano y estatal como los siguientes: La creación de un ente que regula los procesos de urbanización (Instituto Nacional de Vivienda y Urbanismo, la formación e intervención de la tugurización y el surgimiento de espacios residenciales para el asentamiento de clases medias. El  análisis finaliza en el año de 2011; debido a que a partir de la década del 2000 surgieron paulatinamente, las llamadas “comunidades cerradas” que reflejan otra lógica de fragmentación socio espacial. Metodológicamente se plantearon dos fases: Una referida a un análisis descriptivo realizado a fuentes primarias. La segunda fase  se  trabajó  desde un enfoque de historia oral, mediante entrevistas semi estructuradas, realizadas a dueños de inmobiliarias, a ingenieros civiles y arquitectos que laboraron en el periodo.

  1. Antijudaïsme, pouvoir politique et administration de la justice. Juifs, chrétiens et convertis dans l’espace juridictionnel de la Chancillería de Valladolid (xve-xvie siècles

    Directory of Open Access Journals (Sweden)

    Elisa Caselli

    2011-05-01

    Full Text Available Composition du juryMonsieur. Bernard Vincent, Directeur de thèses (ÉHESS,Monsieur. Bartolomé Bennassar (Université de Toulouse le Mirail,Monsieur. Ricardo Garcia Carcel (Université Autonome de Barcelone,Madame. Claude Gauvard (Université de Paris I,Madame. Béatrice Perez (Université de Rennes II,Monsieur. Jean-Paul Zuñiga, (ÉHESSMention très honorable avec félicitation du juryThèse soutenue le 28 juin 2010RésuméÀ travers des procès judiciaires impliquant des juifs, plaidant entre eux ou...

  2. Unas opciones para muestras de la naturaleza

    Science.gov (United States)

    Frank H. Wadsworth

    2009-01-01

    La ciencia, incluso la de Puerto Rico, aprende de muestras, su interpretación y extrapolación a situaciones más extensas. Las muestras de la naturaleza de Puerto Rico: las del suelo, la hojarasca, la sombra, la biomasa, los árboles, las aves, los reptiles y anfibios, o los insectos caracterizan los ecosistemas. [article in Spanish

  3. Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

    International Nuclear Information System (INIS)

    Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

    2008-01-01

    Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

  4. Inventory and state of activity of rockglaciers in the Ile and Kungöy Ranges of Northern Tien Shan from satellite SAR interferometry

    Science.gov (United States)

    Strozzi, Tazio; Caduff, Rafael; Kääb, Andreas; Bolch, Tobias

    2017-04-01

    The best visual expression of mountain permafrost are rockglaciers, which, in contrast to the permafrost itself, can be mapped and monitored directly using remotely sensed data. Studies carried out in various parts of the European Alps have shown surface acceleration of rockglaciers and even destabilization of several such landforms over the two last decades, potentially related to the changing permafrost creep conditions. Changes in rockglacier motion are therefore believed to be the most indicative short- to medium-term response of rockglaciers to environmental changes and thus an indicator of mountain permafrost conditions in general. The ESA DUE GlobPermafrost project develops, validates and implements EO products to support research communities and international organizations in their work on better understanding permafrost characteristics and dynamics. Within this project we are building up a worldwide long-term monitoring network of active rockglacier motion investigated using remote sensing techniques. All sites are analysed through a uniform set of data and methods, and results are thus comparable. In order to quantify the rate of movement and the relative changes over time we consider two remote sensing methods: (i) matching of repeat optical data and (ii) satellite radar interferometry. In this contribution, we focus on the potential of recent high spatial resolution SAR data for the analysis of periglacial processes in mountain environments with special attention to the Ile and Kungöy Ranges of Northern Tien Shan at the border between Kazakhstan and Kyrgyzstan, an area which contains a high number of large and comparably fast (> 1m/yr) rockglaciers and is of interest as dry-season water resource and source of natural hazards. As demonstrated in the past with investigations conducted in the Swiss Alps, the visual analysis of differential SAR interferograms can be employed for the rough estimation of the surface deformation rates of rockglaciers and

  5. Holocene River Dynamics, Climate Change and Floodwater Farming in the Watersheds of the Pamir and Tien Shan Mountains of Inner Asia

    Science.gov (United States)

    Macklin, M. G.; Panyushkina, I. P.; Toonen, W. H. J.

    2014-12-01

    The Ili, Syr Dayra and Amu Dayra rivers of Inner Asia are emerging as critical areas for the development of irrigation-based agriculture in the ancient world. Following research by Russian archaeologists in the 1970s it is evident that these watersheds had flourishing riverine civilizations comparable to those in Mesopotamia and the Indus Valley. But unlike these areas where the relationship between Holocene river dynamics, climate change and floodwater farming is increasingly underpinned by radiometric dating, the alluvial archaeology of Inner Asia is significantly under researched. To address this, a major multi-disciplinary research program was begun in 2011 centred on the Talgar catchment, a south-bank tributary of the Ili river, southeast Kazakhstan. Building on archaeological excavations and surveys conducted over the past 20 years, we have undertaken one of the most detailed investigations of Holocene people-river environment interactions in Inner Asia. River development has been reconstructed over the last 20,000 years and human settlement histories from the Eneolithic to the Medieval period documented. Periods of Holocene river aggradation and high water levels in Lake Balkhash and Aral Sea correspond with cooler and wetter neoglacial episodes while river entrenchment and floodplain soil development are associated with warmer and drier conditions. Floodwater farming in the Talgar river reached its acme in the late Iron Age (400-200 cal. BC) with more than 60 settlement sites and 550 burial mounds. This corresponds to a period of reduced flood flows, river stability and glacier retreat in the Tien Shan headwaters. A new hydroclimatic-based model for the spatial and temporal dynamics of floodwater farming in the Ili, Syr Dayra and Amu Dayra watersheds is proposed, which explains the large scale expansion (down-river) and contraction (up-river) of settlements since the first use of irrigation in the Neolithic through to the late Medieval period.

  6. SiCloud

    DEFF Research Database (Denmark)

    Jiang, Cathy Y.; Devore, Peter T.S.; Lonappan, Cejo Konuparamban

    2017-01-01

    The silicon photonics industry is projected to be a multibillion dollar industry driven by the growth of data centers. In this work, we present an interactive online tool for silicon photonics. Silicon Photonics Cloud (SiCCloud.org) is an easy to use instructional tool for optical properties...

  7. SI: The Stellar Imager

    Science.gov (United States)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  8. U-Mo/Al-Si interaction: Influence of Si concentration

    International Nuclear Information System (INIS)

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

    2010-01-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  9. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  10. Gd-Ni-Si system

    International Nuclear Information System (INIS)

    Bodak, O.I.; Shvets, A.F.

    1983-01-01

    By X-ray phase analysis method isothermal cross section of phase diagram of the Gd-Ni-Si system at 870 K is studied. The existence of nine previously known compounds (GdNisub(6.72)Sisub(6.28), GdNi 10 Si 2 , GdNi 5 Si 3 , GdNi 4 Si, GdNi 2 Si 2 , GdNiSi 3 , GdNiSi 2 , Gd 3 Ni 6 Si 2 and GdNiSi) is confirmed and three new compounds (GdNisub(0.2)Sisub(1.8), Gdsub(2)Nisub(1-0.8)Sisub(1-1.2), Gd 5 NiSi 4 ) are found. On the base of Gd 2 Si 3 compound up to 0.15 at. Ni fractions, an interstitial solid solution is formed up to 0.25 at Ni fractions dissolution continues of substitution type. The Gd-Ni-Si system is similar to the Y-Ni-Si system

  11. Ora et labora. Paradigmes du modèle monacal médiéval chez Chrétien de Troyes / Ora et labora. Paradigms of the Medieval Monastic Model in Chrétien de Troyes’s Work

    Directory of Open Access Journals (Sweden)

    Diana Gradu

    2015-05-01

    Full Text Available The medieval monachal model is marked out by the faith, by the power, by the morality. It is also shared between confidence and fear with regard to the power on the earth, but, certainly, all the clerks and the monks of the Middle Age know and assume the rule Redde Caesari quae sunt Cesaris and quae sunt Dei Deo. The medieval literature, the unfaithful mirror, is reflected in an incomplete and sometimes idealized way, the example of the hermit, but it constitutes in the essential source of its paradigm. I shall stop to Chrétien of Troyes and to its novels, they are the most glorious proof of the Renaissance of the 12th century.

  12. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  13. Oblique roughness replication in strained SiGe/Si multilayers

    NARCIS (Netherlands)

    Holy, V.; Darhuber, A.A.; Stangl, J.; Bauer, G.; Nützel, J.-F.; Abstreiter, G.

    1998-01-01

    The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with

  14. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  15. Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

    International Nuclear Information System (INIS)

    Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

    1990-01-01

    Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

  16. GASIFICACIÓN DE CARBÓN PARA GENERACIÓN DE ENERGÍA ELÉCTRICA: ANÁLISIS CON VALORACIÓN DE OPCIONES REALES COAL GASIFICATION FOR POWER GENERATION: ANALYSIS WITH REAL OPTIONS VALUATION

    Directory of Open Access Journals (Sweden)

    Alejandro Concha A

    2009-12-01

    Full Text Available Se evalúa económicamente la utilización de la tecnología de gasificación de carbón en la generación de energía eléctrica, utilizando información secundaria y el enfoque de valoración de opciones reales mediante árboles binomiales de 2 variables. Se analiza el caso de adaptar una central existente de gas natural de ciclo combinado (NGCC para la utilización de syngas a partir de carbón; en un segundo caso, se evalúa la instalación de una nueva central termoeléctrica de carbón pulverizado (PC o alternativamente una central de gasificación de carbón integrada a ciclo combinado (IGCC. En este último caso, se evalúa la opción de "switching" de combustible. Para los precios de los combustibles se emplean modelos de Movimiento Browniano Geométrico No Homogéneo (IGBM y en ambos casos estudiados se analiza en 2 escenarios de precios, incluyendo análisis de sensibilidad. Respecto al primer caso, la adaptación a syngas de una planta NGCC es conveniente económicamente, teniendo el proyecto una alta sensibilidad respecto a la eficiencia. La sensibilidad a la inversión no es significativa, como tampoco a los gastos de operación. Respecto al segundo caso, la conveniencia económica de la planta IGCC frente a la planta PC no es clara en los escenarios de precios considerados. Pero analizada en diversas combinaciones de precios, la planta IGCC de operación flexible alternando dos combustibles puede lograr ventajas económicas. Respecto a la sensibilidad, se repiten las conclusiones mencionadas para el primer caso.The use of coal gasification technology in the generation of electric power is evaluated economically. Secondary information and valuation of real options approach is used, with two variables binomial lattices. First, the retrofit of an existing natural gas combined cycle plant (NGCC for the utilization of syngas from coal is analyzed; on the second case, an economical evaluation is realized for to compare a new Pulverized

  17. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  18. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  19. Geology, mineralization, and fluid inclusion study of the Kuru-Tegerek Au-Cu-Mo skarn deposit in the Middle Tien Shan, Kyrgyzstan

    Science.gov (United States)

    Soloviev, Serguei G.; Kryazhev, Sergey; Dvurechenskaya, Svetlana

    2018-02-01

    The Kuru-Tegerek Cu-Au-Mo deposit is situated in a system of Late Carboniferous subduction-related magmatic arcs of the Middle Tien Shan, which together constitute a metallogenic belt of Cu-Au-Mo (±W) porphyry, with local skarns, deposits. The deposit is related to magnetite-series gabbro-diorite to tonalite intrusion. It contains prograde magnesian and calcic skarns with abundant magnetite, associated with gabbro-diorite, and retrograde skarn with Cu mineralization, formed after intrusion of tonalite. Subsequent propylitic alteration introduced abundant chalcopyrite and pyrrhotite, and native Au culminating in zones overprinting magnetite and garnet skarn. Later quartz-muscovite-carbonate veins, formed after intrusion of late mafic quartz monzogabbro dikes, contain chalcopyrite, pyrite, arsenopyrite and other sulfides and sulfosalts, tellurides, and native Au. The earliest retrograde skarn garnet contains gaseous low-salinity (1.7-3.4 wt.% NaCl eq.) fluid inclusions homogenizing at 460-500 °C into vapor, indicating that the early fluid released from crystallizing magma was a low-density vapor. It was followed by more saline (4.0-5.0 wt.% NaCl eq.), high-temperature (400-440 °C) aqueous fluid, as fluid release from the magma progressed. Boiling of this fluid at temperatures of 420 to 370 °C and a pressure of 350-300 bar produced a low-salinity (0.6-1.2 wt.% NaCl eq.), essentially gaseous, and high-salinity (from 39 to 31 wt.% NaCl eq.) brine, with possible metal (including Cu) partitioning into both gaseous and aqueous-saline phases. Boiling was coeval with sulfide deposition in the retrograde skarn. The latest episode of the retrograde skarn stage included direct separation of saline ( 40-42 wt.% NaCl eq.) fluid from crystallizing magma. The separation of saline ( 40 to 14 wt.% NaCl eq.) fluids from a crystallizing magmatic melt continued during the propylitic stage, when fluid cooling from 370 to 320 °C, together with decreasing fO2, caused Cu and especially

  20. Early Permian intrusions of the Alai range: Understanding tectonic settings of Hercynian post-collisional magmatism in the South Tien Shan, Kyrgyzstan

    Science.gov (United States)

    Konopelko, D.; Wilde, S. A.; Seltmann, R.; Romer, R. L.; Biske, Yu. S.

    2018-03-01

    We present geochemical and Sr-Nd-Pb-Hf isotope data as well as the results of single grain U-Pb zircon dating for ten granitoid and alkaline intrusions of the Alai segment of Kyrgyz South Tien Shan (STS). The intrusions comprise four geochemically contrasting series or suites, including (1) I-type and (2) shoshonitic granitoids, (3) peraluminous granitoids including S-type leucogranites and (4) alkaline rocks and carbonatites, closely associated in space. New geochronological data indicate that these diverse magmatic series of the Alai segment formed in a post-collisional setting. Five single grain U-Pb zircon ages in the range 287-281 Ma, in combination with published ages, define the main post-collisional magmatic pulse at 290-280 Ma, which is similar to ages of post-collisional intrusions elsewhere in the STS. An age of 287 ± 4 Ma, obtained for peraluminous graniodiorite of the Liayliak massif, emplaced in amphibolite-facies metamorphic rocks of the Zeravshan-Alai block, is indistinguishable from ca. 290 Ma age of peraluminous granitoids emplaced coevally with Barrovian-type metamorphism in the Garm block, located ca. 40 km south-west of the research area. The Sr-Nd-Pb-Hf isotopic compositions of the studied intrusions are consistent with the reworking of crustal material with 1.6-1.1 Ga average crustal residence times, indicating the formation of the Alai segment on a continental basement with Mesoproterozoic or older crust. The pattern of post-collisional magmatism in the Alai segment, characterized by emplacement of I-type and shoshoninitic granitoids in combination with coeval Barrovian-type metamorphism, is markedly different from the pattern of post-collisional magmatism in the adjacent Kokshaal segment of the STS with predominant A-type granitoids that formed on a former passive margin of the Tarim Craton. We suggest that during the middle-late Carboniferous the Alai segment probably comprised a microcontinent with Precambrian basement located between

  1. Mineralogy and geochemistry of triassic carbonatites in the Matcha alkaline intrusive complex (Turkestan-Alai Ridge, Kyrgyz Southern Tien Shan), SW Central Asian orogenic belt

    Science.gov (United States)

    Vrublevskii, V. V.; Morova, A. A.; Bukharova, O. V.; Konovalenko, S. I.

    2018-03-01

    Postorogenic intrusions of essexites and alkaline and nepheline syenites in the Turkestan-Alai segment of the Kyrgyz Southern Tien Shan coexist with dikes and veins of carbonatites dated at ∼220 Ma by the Ar-Ar and Rb-Sr age methods. They are mainly composed of calcite and dolomite (60-85%), as well as sodic amphibole, phlogopite, clinopyroxene, microcline, albite, apatite, and magnetite, with accessory niobate, ilmenite, Nb-rutile, titanite, zircon, baddeleyite, monazite-(Ce), barite, and sulfides. The rocks share mineralogical and geochemical similarity with carbonatites that originated by liquid immiscibility at high temperatures above 500 °C. Alkaline silicate and salt-carbonate melts are derived from sources with mainly negative bulk εNd(t) ∼ from -11 to 0 and high initial 87Sr/86Sr ratios (∼0.7061-0.7095) which may be due to mixing of PREMA and EM-type mantle material. Pb isotopic ratios in accessory pyrrhotite (206Pb/204Pb = 18.38; 207Pb/204Pb = 15.64; 208Pb/204Pb = 38.41) exhibit an EM2 trend. The intrusions bear signatures of significant crustal contamination as a result of magma genesis by syntexis and hybridism. Concordant isotope composition changes of δ13C (-6.5 to -1.9‰), δ18O (9.2-23‰), δD (-58 to -41‰), and δ34S (12.6-12.8‰) in minerals and rocks indicate inputs of crustal material at the stage of melting and effect of hot fluids released during dehydration of metamorphosed oceanic basalts or sediments. The observed HFSE patterns of the oldest alkaline gabbro may be due to interaction of the primary mafic magma with IAB-type material. The isotope similarity of alkaline rocks with spatially proximal basalts of the Tarim large igneous province does not contradict the evolution of the Turkestan-Alai Triassic magmatism as the "last echo" of the Tarim mantle plume.

  2. Profilaxis con antibióticos en fracturas de base de cráneo: ¿tiene justificación esa conducta?

    Directory of Open Access Journals (Sweden)

    Justo Luis González González

    1998-08-01

    Full Text Available Se realizó un estudio de 380 pacientes con fractura de la base del cráneo y a 71 de ellos (18,7 % se les administraron antibióticos como profilaxis de la meningoencefalitis y a 309 (81,3 % no se les suministraron estos agentes. Se evaluó la relación entre uso profiláctico o terapéutico de antimicrobianos, localización de la fractura, lesiones asociadas, complicaciones sépticas, edad y sexo, con la aparición de meningoencefalitis. Desarrollaron infección del sistema nervioso central 7 pacientes (1,8 %, 3 de ellos (4,2 % entre los que recibieron profilaxis y 4 (1,3 % entre los que no la recibieron. Se probó que la presencia de meningoencefalitis estaba asociada con el tipo de complicaciones sépticas que además pudieron tener los pacientes, así como al uso de antibióticos como terapéutica de éstas en análisis bivariado, lo que no se corroboró en el multivariado. Se concluye que el empleo de antibióticos profilácticos en estos pacientes no tiene justificación, lo que convierte a esta conducta en una práctica negativa desde el punto de vista médico y económicoA study of 380 patients with basilar skull fracture was performed. 71 (18.7 % of these patients were given antibiotic prophylaxis for meningoencephalitis and 309 (81.3 % were not. The relation of prophylactic or therapeutical use of antimicrobial agents, fracture location, associated injures, septic complications, age and sex to the meningoencephalitis coming out was evaluated. 7 patients (1.8 % developed infections of the central nervous system, 3 (4.2 % had been treated with antibiotics and 4 (1.3 % had not. The bivariate analysis proved that the meningoencephalitis was linked to the type of septic complications that might affect patients as well as the therapeutical use of antibiotics to eliminate them but the multivariate analysis did not demonstrate so. It is concluded that the use of the antibiotic prophylaxis in these patients is not substantiated which turns

  3. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  4. Irradiation effect on Nite-SiC/SiC composites

    International Nuclear Information System (INIS)

    Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

    2007-01-01

    Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

  5. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  6. Synthesis and characterization of laminated Si/SiC composites

    Science.gov (United States)

    Naga, Salma M.; Kenawy, Sayed H.; Awaad, Mohamed; Abd El-Wahab, Hamada S.; Greil, Peter; Abadir, Magdi F.

    2012-01-01

    Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results. PMID:25685404

  7. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  8. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  9. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    International Nuclear Information System (INIS)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-01-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  10. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    Science.gov (United States)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  11. Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

    International Nuclear Information System (INIS)

    Leung, To Chi.

    1991-01-01

    A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

  12. Positron annihilation at the Si/SiO2 interface

    International Nuclear Information System (INIS)

    Leung, T.C.; Weinberg, Z.A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G.W.; Lynn, K.G.

    1992-01-01

    Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO 2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S int ) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO 2 interface

  13. Formation of Si/Ge/Si heterostructures with quantum dots

    International Nuclear Information System (INIS)

    Zinov'ev, V.A.; Dvurechenskij, A.V.; Novikov, P.L.

    2003-01-01

    It is present the Monte Carlo simulation of epitaxial embedding of faceted three-dimensional Ge islands (quantum dots) in a Si matrix. Under a Si flux these islands expand and undergo a shape change (from pyramidal to drop-like shape). The main expansion occurs at initial stage of embedding in Si (deposition of 1-2 monolayers). This change is controlled by surface diffusion. The shape of island can be preserved when one uses the higher Si fluxes. The reason of island conservation lies in blocking of Ge surface diffusion [ru

  14. The enigmas of The grail. on The ConTroversy over The UniTy of Li Contes deL GraaL of ChréTien de Troyes

    Directory of Open Access Journals (Sweden)

    Victoria Cirlot

    2014-12-01

    Full Text Available This paper presents a review of the controversy about the unity of the last roman of Chrétien de Troyes, Li Contes del Graal which took place in the late fifties between Martí de Riquer, Jean Frappier and Erich Köhler. More than fifty years later, this paper will appraise the contributions that this controversy made to Romance philology, and, in particular, to the assessment of the last work of the Champenian writer.

  15. Hipertensión pulmonar tromboembólica crónica: caracterización, endarterectomía pulmonar y nuevas opciones terapéuticas

    Directory of Open Access Journals (Sweden)

    Sofía Martín-Suárez

    2018-03-01

    Full Text Available Resumen: La hipertensión pulmonar tromboembólica crónica se considera el único tipo de hipertensión pulmonar con un tratamiento quirúrgico potencialmente curativo. Aun hoy está infradiagnosticada o con frecuencia diagnosticada tardíamente, comportando un empeoramiento del pronóstico. La hipertensión pulmonar tromboembólica crónica se presenta con síntomas poco específicos y los médicos de atención primaria pueden no ser conscientes de su presencia o del potencial tratamiento. El tratamiento médico actual es, en el mejor de los casos, paliativo. La endarterectomía pulmonar ofrece la única posibilidad de mejora sintomática y pronóstica, siendo curativa en la mayoría de los casos a corto y a largo plazo. Por lo tanto, no solo la identificación de la enfermedad puede ser difícil y tardía sino que incluso después de que el diagnóstico se haya establecido, la evaluación de la operabilidad puede ser un reto. La operabilidad se basa en la estimación preoperatoria de la clasificación quirúrgica y de la probable resistencia vascular pulmonar postoperatoria, las cuales determinan el riesgo de la intervención y el posible resultado. Este complejo procedimiento que va desde la caracterización de la enfermedad a la intervención quirúrgica pasando por todo el proceso decisional, requiere una colaboración multidisciplinar de expertos en hipertensión pulmonar, con un equipo quirúrgico dedicado a este campo y con protocolos bien precisos. En nuestro centro, hemos construido un equipo especializado que incluye radiólogos, cardiólogos, cirujanos cardiacos, anestesistas/intensivistas y fisioterapeutas, que no solo ha permitido obtener resultados quirúrgicos comparables a centros europeos de más alto volumen, sino que también ha permitido desarrollar e implementar otras opciones terapéuticas como la angioplastia pulmonar con balón, dedicadas a los pacientes de alto riesgo descartados para la cirugía.En el siguiente art

  16. Desarrollo e implantación de modelos de evaluación de proyectos de investigación desarrollo e innovación

    OpenAIRE

    González de Rojas, Ramón

    2016-01-01

    Desarrollo de un nuevo modelo de evaluación de proyectos de I+D+i, en el cual se evalúa en primer lugar mediante el grado de factibilidad si ese proyecto en concreto tiene cabida en el contexto actual, posteriormente mediante un criterio llamado CIR, se establece cual es el mejor método de evaluación económica incluye diferentes métodos, el VAN, el VAN expandido, opciones reales, y la lógica borrosa (fuzzy-sets). Implementación del modelo anterior sobre una aplicación en el lenguaje de pro...

  17. ¿Son realmente eficaces los programas de detección de talentos deportivos? Nuevos horizontes para su diseño

    OpenAIRE

    Lorenzo Calvo, Alberto; Jiménez Sáiz, Sergio Lorenzo; Lorenzo Calvo, Jorge

    2014-01-01

    Conseguir la excelencia en el deporte requiere grandes esfuerzos, recursos y tiempo. Cualquier pequeño avance que ayude a mejorar dicho proceso, que aumente las opciones de éxito de los distintos programas formativos, será de gran valor. ¿Qué es lo que provoca que un deportista si alcance los resultados esperados y otros no? ¿Qué factores favorecen el desarrollo del deportista? ¿Cómo diseñar el proceso de detección y desarrollo del talento? El presente artículo tiene como objetivo presentar e...

  18. "Rengo es el que tiene pelotas": discapacidad motriz, deporte adaptado y masculinidad hegemónica en la ciudad de Buenos Aires

    Directory of Open Access Journals (Sweden)

    Carolina Ferrante

    2017-07-01

    Full Text Available En este artículo se analiza el rol de la masculinidad hegemónica en el campo del deporte para personas con discapacidad motriz de la ciudad de Buenos Aires, Argentina. Para ello se parte de los datos recogidos en una investigación cualitativa realizada en dicha ciudad. Se trata de análisis de contenido de prensa escrita producida por los fundadores locales del deporte adaptado, 21 entrevistas en profundidad a hombres usuarios del campo y 26 entrevistas en profundidad a expertos y expertas en la materia. Entre los principales resultados se halla que la masculinidad hegemónica posee un papel nodal en la filosofía del deporte adaptado. A través de la inculcación de un peculiar modo de comprender a la discapacidad – asociado a la categoría nativa "rengo" – se promueve una "cultura del campeón" tributaria del cuerpo capaz y de los valores asociados a este modelo de masculinidad. Se concluye indicando que si bien dicha cultura cuestiona el carácter estigmatizador de la discapacidad (la presunta incapacidad sexual, la improductividad y la dependencia impone una ideología de la capacidad que reproduce las estructuras sociales opresivas.

  19. 32Si dating of sediments

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2006-01-01

    Useful tools for determining absolute ages of sediments deposited within the last c. 100 years include 210 Pb, 137 Cs, and bomb radiocarbon. Cosmogenic 32 Si, with a half life of c. 140 years, can be applied in the age range 30-1000 years and is ideally suited for this time period. Detection of 32 Si is, however, very difficult due to its extremely low natural specific activity, and the vast excess of stable silicon (i.e. low 32 Si/Si ratio). 23 refs

  20. SiC/SiC Cladding Materials Properties Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  1. Oscillations in the fusion of the Si + Si systems

    International Nuclear Information System (INIS)

    Aguilera R, E.F.; Kolata, J.J.; DeYoung, P.A.; Vega, J.J.

    1986-02-01

    Excitation functions for the yields of all the residual nuclei from the 28 Si + 28,30 and 30 Si + 30 Si reactions have been measured via the γ-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the 28 + 28 Si reaction, we have found evidence for intermediate width structure in the 2α and the αpn channels in 28 Si + 30 Si and for broad structure in the total fusion cross sections for 30 Si + 30 Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  2. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  3. Revisión de los modelos de producción de voz después de una laringectomía total: opciones de calidad de voz

    Directory of Open Access Journals (Sweden)

    Roberto Fernández-Baillo

    2011-12-01

    Full Text Available El paciente laringectomizado es aquel que debido a un proceso cancerígeno ha sido sometido a una intervención quirúrgica cuyo resultado es la extirpación total de la laringe. Como consecuencia de esta operación el paciente sufre una serie de modificaciones anatómicas que conllevan la alteración y/o pérdida de determinadas funciones. Siendo la pérdida de la voz, y por tanto de la comunicación oral, la limitación principal a la que se enfrentan estos pacientes. Es por ello, que el proceso de tratamiento y rehabilitación post-quirúrgico tiene como uno de sus objetivos principales el restablecimiento de la comunicación oral. Para ello se deberá dotar al paciente de una nueva fuente de sonido (neo-glotis, la cual tendrá que suplir o emular la función vibratoria anteriormente realizada por glotis laríngea. El objetivo de este trabajo es analizar desde una perspectiva biomecánica y acústicas los distintos tipos de voces que pueden representar una opción para el paciente laringectomizado. Se pretende mostrar las ventajas y limitaciones de cada modelo de producción, de una forma clara y objetiva, comprensible tanto para el clínico como para el paciente, con el fin de orientar en la toma de decisiones. Finalmente se realiza un análisis acústico de la voz de cuatro pacientes femeninos laringectomizadas. Cada muestra de voz se corresponde con un modelo de producción diferente: laringe artificial, prótesis fonatoria y erigmofonía.

  4. Tailoring of SiC nanoprecipitates formed in Si

    Energy Technology Data Exchange (ETDEWEB)

    Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-07-15

    The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

  5. SI units in radiation protection

    International Nuclear Information System (INIS)

    Jain, V.K.; Soman, S.D.

    1978-01-01

    International System of Units abbreviated as SI units has been adopted by most of the countries of the world. Following this development, the implementation of SI units has become mandatory with a transition period of about ten years. Some of the journals have already adopted the SI units and any material sent for publication to them must use only these. International Commission on Radiation Units and Measurement (ICRU) published letters in several journals including Physics in Medicine and Biology, Health Physics, British Journal of Radiology, etc. outlining the latest recommendations on SI units to elicit the reactions of scientists in the general field of radiological sciences. Reactions to the letters were numerous as can be seen in the correspondence columns of these journals for the last few years and ranged from great misgivings and apprehension to support and appreciation. SI units have also been the subject of editorial comments in several journals. On the basis of a survey of this literature, it may be said that there was general agreement on the long term advantage of SI units inspite of some practical difficulties in their use particularly in the initial stages. This report presents a review of SI units in radiological sciences with a view to familiarize the users with the new units in terms of the old. A time table for the gradual changeover to the SI units is also outlined. (auth.)

  6. Oscillations in the fusion of the Si + Si systems; Oscilaciones en la fusion de sistemas de Si + Si

    Energy Technology Data Exchange (ETDEWEB)

    Aguilera R, E F; Kolata, J J; DeYoung, P A; Vega, J J [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

    1986-02-15

    Excitation functions for the yields of all the residual nuclei from the {sup 28} Si + {sup 28,30} and {sup 30} Si + {sup 30} Si reactions have been measured via the {gamma}-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the {sup 28} + {sup 28} Si reaction, we have found evidence for intermediate width structure in the 2{alpha} and the {alpha}pn channels in {sup 28} Si + {sup 30} Si and for broad structure in the total fusion cross sections for {sup 30} Si + {sup 30} Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  7. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  8. Mechanics of patterned helical Si springs on Si substrate.

    Science.gov (United States)

    Liu, D L; Ye, D X; Khan, F; Tang, F; Lim, B K; Picu, R C; Wang, G C; Lu, T M

    2003-12-01

    The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.

  9. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  10. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  11. Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

    Science.gov (United States)

    Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

    Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

  12. A note on the Sumerian expression SI-ge4-de3/dam

    Directory of Open Access Journals (Sweden)

    Widell, Magnus

    2002-12-01

    Full Text Available The expression SI-ge4-dam/de3 appears in some of the loan documents of the Ur III period where it was used to establish the interest rate or the loan fee. In addition, it is sometimes preceded by ki-ba 'in its/this place/ground' or, in some cases, ma2 -a 'in the boat'. The regular verb SI.g was closely related, perhaps even synonymous with, the reduplication verb ḡar/ḡa2-ḡa2 'to put' or 'to place'. While it may be concluded that SI-ge4-dam/de3 had nothing to do with the verb si 'to fill' or gi4 'to return', the correct analysis of the expression remains somewhat uncertain. The article proposes that the SI should be read se and understood as a phonetic writing for the regular verb se3.g 'to put', 'to place'. The combination of the verb with the ki-ba may suggest that a more parochial form of keeping products existed side by side with the large centralized granaries and storehouses of the city.La expresión SI-ge4-dam/de3 aparece en algunos contratos de préstamo del período de Ur III, donde se empleaba para determinar el interés de dicho préstamo. Por otra parte, este término se hallaba a veces precedido de ki-ba 'en su/este lugar/suelo', y en algunos casos por ma2 -a 'en la barca'. El verbo regular SI.g está muy relacionado (quizás es incluso sinónimo con el verbo de la clase de la reduplicación ḡar/ḡa2-ḡa2 'poner' o 'colocar'. Mientras que puede concluirse que SI-ge4-dam/de3 no tiene nada que ver con el verbo si 'llenar', ni con gi4 'regresar, devolver', el análisis correcto de la expresión sigue siendo, de algún modo, incierto. En el artículo se propone que SI puede leerse como se , entendiéndolo como una escritura fonética del verbo regular se3.g 'poner', 'colocar'. La combinación del verbo con ki-ba podría indicar que, junto a los grandes graneros y almacenes centrales de la ciudad, había un modo distinto y más modesto de conservar los productos.

  13. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  14. Low dose irradiation performance of SiC interphase SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  15. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2010-07-15

    We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

  16. “Et qui or me vaurra entendre, cuer et oreilles me doit rendre”: espacios de lectura y público de los roman courtois de Chrétien de Troyes (siglos XII-XIII

    Directory of Open Access Journals (Sweden)

    Diego Carlo Améndolla Spinola

    2016-06-01

    Full Text Available Basado en los planteamientos de la lógica social del texto, este artículo presenta un estudio del público que escuchaba los romances corteses entre los siglo XII y XIII, específicamente los realizados por Chrétien de Troyes –clérigo lector de la Corte de Leonor de Aquitania y de Enrique II Plantagenet–, además de establecer y analizar las diversas salas de los castillos donde estas obras literarias eran narradas.

  17. Grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......Polyvinyl alcohol (PVA) grafted SiC (PVA-g-SiC)/PVA nanocomposite was synthesized by incorporating PVA grafted silicon carbide (SiC) nanocrystals inside PVA matrix. In-depth structural characterization of resulting nanocomposite was carried out using fourier transform infrared spectroscopy (FTIR...

  18. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  19. Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

    International Nuclear Information System (INIS)

    Sadeghzadeh, M.A.

    1998-12-01

    This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

  20. P-type poly-Si prepared by low-temperature aluminum-induced crystallization and doping for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Yasuhiro; Yu, Zhenrui; Morales-Acevedo, Arturo [CINVESTAV-IPN, Mexico, D.F. (Mexico)

    2000-07-01

    P-type poly-Si thin films prepared by low temperature aluminum-induced crystallization and doping are reported. The starting material was boron-doped a-Si:H prepared by PECVD on glass substrates. Aluminum layers with different thickness were evaporated on a-Si:H surface and conventional thermal annealing was performed at temperatures ranging from 300 to 550 Celsius degrees. XRD, SIMS, and Hall effect measurements were carried out to characterize the annealed Al could be crystallized at temperature as low as 300 Celsius degrees in 60 minutes. This material has high carrier concentration as well as high Hall mobility and can be used as a p-layer of seed layer for thin film poly-Si solar cells. The technique reported here is compatible with PECVD process. [Spanish] Se informa sobre la preparacion de peliculas delgadas tipo P y Poli-Si mediante la cristalizacion inducida de aluminio a baja temperatura y el dopado. El material inicial era de boro dopado y a-Si:H preparado PECVD sobre substratos de vidrio. Se evaporaron capas de aluminio de diferente espesor sobre una superficie de a-Si:H y se llevo a cabo un destemplado termico convencional a temperaturas que varian entre 300 y 500 grados Celsius. Se llevaron a cabo mediciones de XRB, SIMS y del efecto Hall para caracterizar el aluminio destemplado para que pudiera ser cristalizado a temperaturas tan bajas como 300 grados Celsius en 60 minutos. Este material tiene una alta concentracion portadora asi como una alta movilidad Hall y puede usarse como una capa de semilla para celdas solares de pelicula delgada Poli-Si. La tecnica reportada aqui es compatible con el proceso PECVD.

  1. La tipología del fumador como determinante de las opciones terapéuticas para dejar de fumar : estudio analítico del cuestionario "reasons for smoking scale"

    OpenAIRE

    Fernández-Cruz Sarrate, Eduardo

    2010-01-01

    El presente trabajo parte de la hipótesis de que el test puede presentar una gran utilidad clínica debido a que: 1°)los diversos perfiles del fumador pueden asociarse significativamente a las tasas de cesación; y 2°) se podrían adaptar las intervenciones de cesación y 3º) predecir los resultados en función de su perfil, tal como se define en el RSS. Sobre la base de esta hipótesis, el análisis de los objetivos que se ha planteado incluye: 1) Evaluar si el test “Tipo de Fumador” (Reason...

  2. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

    Directory of Open Access Journals (Sweden)

    Jiongjiong Mo

    2017-01-01

    Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

  3. On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

    International Nuclear Information System (INIS)

    Djenize, S.; Sreckovic, A.; Bukvic, S.

    2010-01-01

    Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3s3p 22 D-3s 2 4p 2 P o , 3s 2 3d 2 D-3s 2 4f 2 F o , and 3s 2 4p 2 P o -3s 2 4d 2 D transitions, the Si III line intensity ratios in the 3s3d 3 D-3s4p 3 P o , 3s4p 3 P o -3s4d 3 D, 3s4p 3 P o -3s5s 3 S, 3s4s 3 S-3s4p 3 P o , and 3s4f 3 F o -3s5g 3 G transitions, and the Si IV line intensity ratios in the 4p 2 P o -4d 2 D and 4p 2 P o -5s 2 S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.

  4. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    Science.gov (United States)

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  5. Vers une “écriture métisse”: le roman des immigrants haïtiens du Québec Writing the cultural cross-currents: the Haitian immigrants’ novel in Quebec

    Directory of Open Access Journals (Sweden)

    Józef Kwaterko

    2010-12-01

    Full Text Available mémoriel et langagier dans les romans des immigrants haïtiens au Québec.Après quelques considérations sociologiques sur l’écriture migrante(diasporique, on observera les enjeux esthétiques du métissage sur un axediachronique : les années 1970 où l’espace-temps du pays d’origine dominela représentation, les années 1980 où le travail du deuil apporte des effetsd’hybridation, et à partir du milieu des années 1980 à nos jours lorsque lesromanciers haïtiens assument l’exil et se réapproprient à distance leur paysdélaissé.The aim of this paper is to recognize the manifestations of the culturalhybridization (métissage among Haitian novelists who immigrated to Quebec. After some sociological characteristics of the migrant writing, the mainaesthetics features will be observed on diachronic level: during the 1970s,when the place of the country of origin dominate the representation, duringthe 1980s when the feeling of split identity increase the effects of hybridity,and since the middle of 1980s when the Haitian writers assume their exileby entering into an intercultural, dialogic relationship with their abandonedcountry.

  6. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates

    International Nuclear Information System (INIS)

    Teng, F-Y; Ting, J-M; Sharma, Sahendra P; Liao, Kun-Hou

    2008-01-01

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs

  7. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates.

    Science.gov (United States)

    Teng, F-Y; Ting, Jyh-Ming; Sharma, Sahendra P; Liao, Kun-Hou

    2008-03-05

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs.

  8. SI units in engineering and technology

    CERN Document Server

    Qasim, S H

    2016-01-01

    SI Units in Engineering and Technology focuses on the use of the International System of Units-Systeme International d'Unités (SI). The publication first elaborates on the SI, derivation of important engineering units, and derived SI units in science and engineering. Discussions focus on applied mechanics in mechanical engineering, electrical and magnetic units, stress and pressure, work and energy, power and force, and magnitude of SI units. The text then examines SI units conversion tables and engineering data in SI units. Tables include details on the sectional properties of metals in SI units, physical properties of important molded plastics, important physical constants expressed in SI units, and temperature, area, volume, and mass conversion. Tables that show the mathematical constants, standard values expressed in SI units, and Tex count conversion are also presented. The publication is a dependable source of data for researchers interested in the use of the International System of Units-Systeme Inter...

  9. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    International Nuclear Information System (INIS)

    Wu Yuying; Liu Xiangfa; Jiang Binggang; Huang Chuanzhen

    2009-01-01

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  10. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  11. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  12. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    International Nuclear Information System (INIS)

    Jeon, Bup Ju; Lee, Joong Kee

    2014-01-01

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH 4 /SiH 4 mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH 4 and SiH 4 precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium

  13. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Bup Ju [Department of Energy Resources, Shinhan University, 233-1, Sangpae-dong, Dongducheon, Gyeonggi-do, 483-777 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Advanced Energy Materials Processing Laboratory, Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-03-25

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH{sub 4}/SiH{sub 4} mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH{sub 4} and SiH{sub 4} precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium.

  14. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  15. Escolhas Associadas ao Automóvel por Homens e por Mulheres: confluência ou divergência? Choices associated with automobiles for Men and Women: convergence or divergence? Opciones relacionadas con el Automóvil por Hombres y por Mujeres: ¿convergencia o divergencia?

    Directory of Open Access Journals (Sweden)

    LICHT, René Henrique Götz

    2009-03-01

    revealed there are more similarities than differences between choices associated to the automobile by men and choices associated to the automobile by women. The similarity between the choices suggests that the representations, the meanings and values assigned to the car by men and women are similar and thus the strategy of product differentiation does not apply to the automotive industry.RESUMENEl aumento del poder de compra de las mujeres llevó a las empresas a adoptar estrategias de diferenciación de los productos y a producir productos específicos para el público femenino. La industria automovilística no es inmune a este fenómeno, pues las mujeres concentran aproximadamente la mitad de las ventas de automóviles en el país. Considerando las diferencias de consumo e de comportamiento entre mujeres y hombres se plantea la siguiente cuestión: ¿hay diferencias en las opciones relacionadas con el automóvil entre hombres y mujeres? Se presentaron ante los participantes algunos ítems que forman parte de la vida diaria de las personas y que ellas valorizan; se solicitó a los participantes que escogiesen y asociasen estos ítems al automóvil. El análisis de los resultados reveló que había más similitudes que diferencias entre las opciones relacionadas con el automóvil por parte de los hombres y las opciones relacionadas al automóvil por parte de las mujeres. La similitud entre las opciones indica que las representaciones, los significados y valores atribuidos al automóvil por hombres y mujeres son similares y por lo tanto, la estrategia de diferenciación de productos no se aplica a la industria automovilística.

  16. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  17. Doping effect in Si nanocrystals

    Science.gov (United States)

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  18. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  19. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  1. Thermal shock properties of 2D-SiCf/SiC composites

    International Nuclear Information System (INIS)

    Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

    2012-01-01

    This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

  2. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    International Nuclear Information System (INIS)

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

  3. PCR nuclear composition at 1-20 PeV according to lateral distributions of all EAS and EAS accompanied high-energy-gamma rays and hadrons in EC at Tien-Shan level

    International Nuclear Information System (INIS)

    Nesterova, N.M.; Pavlyuchenko, V.P.; Chubenko, A.P.; Shaulov, S.B.

    2003-01-01

    The Tien-Shan array Adron data are presented on electron-photon component lateral distributions (age parameter S) of extensive air showers of cosmic rays. The data are given as a dependence on the electron size N e for all showers and for showers accompanied by high-energy gamma rays and hadrons in X-ray films. N e characterizes the energy of primary-cosmic-ray nuclei E 0 . Later events are generated by primary photons chiefly. That allows judging on the proton role with E 0 change. S distributions point to the considerable part of light nuclei, protons mainly, at the region above knee of the spectrum at N e > 10 6 up to N e = 5 x 10 6 (E 0 ∼ 10 PeV) at least [ru

  4. Odd Bed-fellows: British Christians and Communists in the Struggle for Peace D’étranges compagnons : chrétiens et communistes britanniques dans la lutte pour la paix

    Directory of Open Access Journals (Sweden)

    Jeremy Tranmer

    2011-04-01

    Full Text Available Au début des années 1950, le doyen de l’archevêché de Cantorbéry œuvra au sein du mouvement pour la paix et participa à des activités organisées par le parti communiste britannique. En 1983, le prêtre catholique Bruce Kent, leader de la Campagne pour le Désarmement Nucléaire, loua l’engagement des communistes britanniques en faveur de la paix. Cet article cherche à examiner pourquoi et comment chrétiens et communistes surmontèrent leurs différences et coopérèrent dans la lutte contre l’arme nucléaire.

  5. Evaluación del nivel del conocimiento que tiene el personal de enfermería sobre la guía de manejo de Trastorno Afectivo Bipolar (TAB

    Directory of Open Access Journals (Sweden)

    Lady Lizcano

    2011-12-01

    Full Text Available El Trastorno Afectivo Bipolar (TAB ocupa el primer lugar de las quince primeras causas por consulta externa en el año 2009 con 1.423 casos sobre un total de 7.177 consultas. La investigación realizada tiene como objetivo determinar el nivel de conocimiento del personal de enfermería que labora en una Empresa Social del Estado especializado en psiquiatría. La prevalencia de esta patología hace relevante la evaluación de la guía del Trastorno Afectivo Bipolar (TAB. El instrumento utilizado fue aplicado a 52 trabajadores de la institución, arrojando como resultado un bajo nivel de conocimiento con relación a la aplicación guía de atención de enfermería de manejo para el paciente con Trastorno Afectivo Bipolar (TAB.

  6. Field evaluation of spatial repellency of metofluthrin-impregnated latticework plastic strips against Aedes aegypti (L.) and analysis of environmental factors affecting its efficacy in My Tho City, Tien Giang, Vietnam.

    Science.gov (United States)

    Kawada, Hitoshi; Iwasaki, Tomonori; LE Loan, Luu; Tien, Tran Khanh; Mai, Nguyen Thi Nhu; Shono, Yoshinori; Katayama, Yasuyuki; Takagi, Masahiro

    2006-12-01

    Spatial repellency of metofluthrin-impregnated polyethylene latticework plastic strips against Aedes aegypti mosquitoes was evaluated. Analysis of environmental factors affecting the efficacy of these strips, such as room temperature, humidity, and house structure, was performed in a residential area in My Tho City, Tien Giang Province, Vietnam. Treatment with the strips at the rate of 1 strip per 2.6-5.52 m(2) (approximately 600 mg per 2.6-5.52 m(2)) reduced the collection of Ae. aegypti resting inside the houses for at least eight weeks. Multiple regression analysis indicated that both increase in the average room temperature and decrease in the area of openings in the rooms that were treated with the strips positively affected the spatial repellency of metofluthrin.

  7. Zigzag et « carré plastique » haïtiens en Amérique du nord à travers l’Autobiographie américaine de Dany Laferrière

    OpenAIRE

    Olivier-Messonnier, Laurence

    2015-01-01

    L’ « Autobiographie américaine » de Dany Laferrière et le « carré plastique » de Léonel Jules, artistes et amis haïtiens émigrés au Québec, déconstruisent la ville américaine par l’éclatement textuel et la plasticité picturale. Mythifient-ils pour autant le berceau natal ? L’écriture plastique et poétique efface les frontières. The « American Autobiography » by Dany Laferrière and the « Carré Plastique » by Léonel Jules, Haitian artists and friends who emigrated to Quebec, deconstruct the ...

  8. 32Si dating of sediments

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2004-01-01

    Brief explanation of the use of 32 Si in the dating of sediments. 32 Si , with a half-life of c.140 years, can be applied in the age range 30-1000 years. An appropriate dating tool for that time range is essential because it includes three very important epochs: the impact of human colonisation and industrialisation during the last 150 years, the Little Ice Age between about 1650 AD and 1850 AD, and the last part of the Medieval Climatic Optimum. 23 refs

  9. SI units in radiation protection

    International Nuclear Information System (INIS)

    Herrmann, D.

    1976-10-01

    In the field of radiation protection all hitherto used units for activity, activity concentrations, exposure, absorbed dose, and dose rates have to be replaced by SI units during the next years. For this purpose graphs and conversion tables are given as well as recommendations on unit combinations preferentially to be used. As to the dose equivalent, it is suggested to introduce a new special unit being 100 times greater than the rem, instead of maintaining the rem or using the gray for both absorbed dose and dose equivalent. Measures and time schedule relating to the gradual transition to SI units in measuring techniques, training, and publishing et cetera are explained. (author)

  10. Cavities at the Si projected range by high dose and energy Si ion implantation in Si

    International Nuclear Information System (INIS)

    Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

    2009-01-01

    Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

  11. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  12. De la chair imbibée de foi : la viande comme marqueur de la frontière entre chrétiens et musulmans en Éthiopie

    Directory of Open Access Journals (Sweden)

    Éloi Ficquet

    2006-05-01

    Full Text Available Jamais en Éthiopie un chrétien et un musulman ne mangent de viande ensemble. Consommer de la viande qui n’a pas été consacrée à sa propre foi est appréhendé comme un acte hautement sacrilège équivalent à une apostasie. Cet interdit doit être compris dans une perspective comparative large sur les pratiques et les débats qui restreignent la commensalité de la viande entre les chrétiens et les musulmans. Les usages éthiopiens ont accentué cette question pour en faire un interdit puissant, marqueur d’une frontière interreligieuse. Comme toute frontière, cette « frontière carnée » a été le lieu de confrontations, d’aménagements et de transgressions dont les effets ont contribué à la construction de l’espace national éthiopien contemporain.Christians and Muslims in Ethiopia never eat meat together. Consuming meat that was not consecrated to one’s faith is seen as a highly sacrilegious act equal to apostasy. This interdict must be understood in comparative perspective that looks at the restrictions regarding the sharing of meat between Christians and Muslims. Ethiopian customs have emphasized this issue to turn it into a powerful interdict, tracing an inter-religious boundary. Like any boundary, this “dietary boundary” has been the site of confrontations, readjustments and transgressions whose effects have contributed to the building of a contemporary Ethiopian national space.

  13. Are hepatocellular carcinoma surveillance programs effective at improving the therapeutic options?: ¿mejoran las opciones terapéuticas de estos pacientes? Eficacia de los programas de cribado de hepatocarcinoma

    Directory of Open Access Journals (Sweden)

    E. Zapata

    2010-08-01

    Full Text Available Aim: to evaluate whether the current surveillance programs (ultrasonography and alpha-fetoprotein testing every six months are successful in detecting patients in the early stages. Material and methods: the health records of all patients diagnosed with hepatocellular carcinoma in Donostia Hospital between 2003 and 2005 were reviewed retrospectively. Eighty-five patients (11 women and 74 men were included in the study and demographic data, risk factors and clinical data were obtained. Patients were split into two groups according to whether or not they had been included in a surveillance program. Results: seventy per cent of patients of the surveillance group is diagnosed in early stage opposite to 26.7% of patients in no surveillance group (p Objetivo: determinar si la utilización en nuestro medio del programa de cribado de HCC establecido -alfa-fetoproteína (AFP y ecografia semestral- en pacientes con hepatopatía crónica permite detectar pacientes en estadios precoces de la enfermedad. Material y métodos: Diseño experimental: estudio retrospectivo. Criterios diagnósticos de HCC: 2 o más técnicas de imagen con lesión hipervascular mayor de 2 cm o 1 técnica de imagen con lesión hipervascular mayor de 2 cm asociado a AFP mayor de 400 ng/ml. Pacientes: 85 pacientes diagnosticados de HCC en el Hospital Donostia entre los años 2003 y 2005. Datos analizados: información demográfica (sexo, edad, factores de riesgo (alcohol, virus de hepatitis, hemocromatosis, otras enfermedades asociadas, e información clínica (etiología de la hepatopatía, estadio de Child-Pugh, determinación de AFP, hallazgos radiológicos, criterios de resecabilidad, tratamiento recibido, evolución. Se divide la muestra en dos grupos según hubieran seguido o no un programa de cribado. Resultados: el 70% de los pacientes del grupo de cribado se diagnostican en estadio precoz frente al 26,7% del grupo de no cribado (p < 0,05. Trece pacientes no pueden recibir

  14. MENSWAARDIGHEID NA TIEN JAAR VAN REGSTAATLIKHEID IN ...

    African Journals Online (AJOL)

    Administrator

    rasionele mens daarvoor moet hê. Outonomie is gevolglik die grondslag van die waardigheid van die menslike natuur en van iedere rasionele skepsel. 11. Bekende Angelsaksiese regsfilosowe onderskryf 'n soortgelyke benadering. Volgens Ronald. Dworkin, wat deels vir John Rawls aanhaal, is die gelyke respek wat aan ...

  15. Een speld in tien miljoen hooibergen

    CERN Multimedia

    Minkema, Martin

    2008-01-01

    Deeply under the ground in Geneva, thousands of scientists work with a giant particle accelerator. A discovery machine which will brew particles as from this summer and perhaps even create mini black holes.

  16. Pharmacovigilance: Tiens Slimming Tea Causes Increased Blood ...

    African Journals Online (AJOL)

    ... possible link between the constituents of the slimming tea and increased blood pressure and also provide evidence of other possible harmful effects that may occur with the use of the slimming tea. Keywords: Pharmacovigilance, hypertension, slimming tea. West African Journal of Pharmacology and Drug Research Vol.

  17. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

    International Nuclear Information System (INIS)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-01-01

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

  18. Pressureless sintering of dense Si3N4 and Si3N4/SiC composites with nitrate additives

    International Nuclear Information System (INIS)

    Kim, J.Y.; Iseki, Takayoshi; Yano, Toyohiko

    1996-01-01

    The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si 3 N 4 and a Si 3 N 4 /SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si 3 N 4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si 3 N 4 particles milled with oxide additives. Monolithic Si 3 N 4 could be sintered to 94% of theoretical density (TD) at 1,500 C with nitrate additives. The sintering temperature was about 100 C lower than the case with oxide additives. After pressureless sintering at 1,750 C for 2 h in N 2 , the bulk density of a Si 3 N 4 /20 wt% SiC composite reached 95% TD with nitrate additives

  19. Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

    International Nuclear Information System (INIS)

    Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

    2000-01-01

    The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

  20. SI units in biomedical dosimetry

    International Nuclear Information System (INIS)

    Liden, K.

    1975-01-01

    The International commission on radiation units and measurements (ICRU), during the period from 1953 to 1962 presented its definitions of the quantities absorbed dose, exposure, activity, and dose equivalent and the corresponding special units the rad, the roentgen, the curie, and the rem. At the same time an international practical system of units was developed, Le Systeme International d'Unites (SI). It was adopted by the 11th Conference Generale des Poids et Mesures (CGPM) in 1960 and is now officially introduced in almost all countries. The general implementation of the SI means difficulties for the future use of the special radiation units, because the numerical factors involved prevent their adoption as SI units. In view of this, and after having sampled the opinion in the radiological field, the ICRU prepared a Statement on Units in July, 1974 which was forwarded to the Comite International des Poids et Mesures (CIPM) and its Comite Consultatif des Unites (CCU) for consideration. As a result of this statement the CIPM has now proposed, that the 15rh CGPM adopt special names for two SI units, namely the becquerel, symbol Bq, for the unit of activity of radionuclides equal to the reciprocal second, s 1- , and the gray, symbol Gy, for the unit of absorbed dose equal to the joule per kilogram, J/kg. The 15th CGPM will consider this matter in May, 1975. (author)

  1. Creating options in family planning for the private sector in Latin America La creación de opciones en materia de planificación familiar para el sector privado en América Latina

    Directory of Open Access Journals (Sweden)

    Suneeta Sharma

    2005-07-01

    anticonceptivos, por lo que dependen cada vez más de los limitados recursos del sector público y del papel menguante del sector privado para la provisión de anticonceptivos al público en general. Así las cosas, dichos países tendrán que crear estrategias multisectoriales para lograr la provisión segura de anticonceptivos. Deberán, asimismo, tener en cuenta la situación del mercado de los productos y servicios de planificación familiar a fin de poder definir y promover los papeles complementarios que han de desempeñar el sector público, el sector comercial y el sector de las organizaciones no gubernamentales, así como determinar con más exactitud a qué grupos de la población debe servir cada uno de estos sectores. Si bien es cierto que el sector público no puede exigirle al sector privado su participación, sí le es posible crear las condiciones propicias para que este asuma un papel más destacado en la satisfacción de las necesidades cada vez mayores de quienes usan métodos de planificación familiar. Tomar medidas para incrementar la participación del sector privado en el mercado es una estrategia esencial si se ha de lograr una distribución más equitativa de los recursos existentes, satisfacer necesidades insatisfechas y crear un futuro sustentable para los proveedores de productos y servicios de planificación familiar. En este trabajo también se examinan en detalle las experiencias de dos países, Paraguay y Perú. El mercado de servicios de planificación familiar en Paraguay es ejemplo de la vigorosa participación del sector privado, aunque el acceso a los servicios de planificación familiar es limitado para quienes no pueden afrontar los costos de dicho sector. En Perú tuvo lugar en 1995 un cambio de políticas orientado a aumentar la cobertura de los servicios de planificación familiar que redundó en un acceso restringido para los pobres y dejó al Ministerio de Salud sin poder sufragar la necesidad creciente de productos y servicios de

  2. Palladium transport in SiC

    International Nuclear Information System (INIS)

    Olivier, E.J.; Neethling, J.H.

    2012-01-01

    Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  3. Palladium transport in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  4. Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

    International Nuclear Information System (INIS)

    Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

    2017-01-01

    Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

  5. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  6. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    Science.gov (United States)

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  7. Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

    Directory of Open Access Journals (Sweden)

    Song Feng

    2018-01-01

    Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

  8. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  9. Production of Al2O3–SiC nano-composites by spark plasma sintering; Producción de nano-composites – SiC–Al2O3 por spark plasma sinterizado

    Energy Technology Data Exchange (ETDEWEB)

    Mansour Razavi; Ali Reza Farajipour; Mohammad Zakeri; Mohammad Reza Rahimipour; Ali Reza Firouzbakht

    2017-11-01

    In this paper, Al2O3–SiC composites were produced by SPS at temperatures of 1600°C for 10min under vacuum atmosphere. For preparing samples, Al2O3 with the second phase including of micro and nano-sized SiC powder were milled for 5h. The milled powders were sintered in a SPS machine. After sintering process, phase studies, densification and mechanical properties of Al2O3–SiC composites were examined. Results showed that the specimens containing micro-sized SiC have an important effect on bulk density, hardness and strength. The highest relative density, hardness and strength were 99.7%, 324.6 HV and 2329MPa, respectively, in Al2O3–20wt% SiCmicro composite. Due to short time sintering, the growth was limited and grains still remained in nano-meter scale. [Spanish] En este trabajo se muestran compuestos de Al2O3-SiC producidos por SPS, en vacío, a 1.600 °C durante 10 min. Para la preparación de muestras, se molieron polvos de Al2O3 durante 5 h con la segunda fase de micro-y-nano polvo de SiC. Posteriormente, estos polvos molidos se sinterizaron mediante SPS. Después del proceso de sinterización, se realizaron estudios de fase, densificación y propiedades mecánicas de los compuestos de Al2O3-SiC obtenidos. Los resultados mostraron que micro-SiC en las muestras tiene un efecto importante en su densidad aparente, dureza y resistencia. La mayor densidad relativa, dureza y resistencia fueron respectivamente del 99,7%, 324,6 HV y 2.329 MPa para Al2O3 con un 20% en peso micro-SiC. Debido al corto tiempo de sinterización, el crecimiento los granos fue limitado y se mantuvieron en escala nanométrica.

  10. Entrance channel excitations in the 28Si + 28Si reaction

    International Nuclear Information System (INIS)

    Decowski, P.; Gierlik, E.; Box, P.F.; Kamermans, R.; Nieuwenhuizen, G.J. van; Meijer, R.J.; Griffioen, K.A.; Wilschut, H.W.; Giorni, A.; Morand, C.; Demeyer, A.; Guinet, D.

    1991-01-01

    Velocity spectra of heavy ions produced in the 28 Si + 28 Si reaction at bombarding energies of 19.7 and 30 MeV/nucleon were measured and interpreted within the Q-optimum model extended by the inclusion of particle evaporation from excited fragments. Regions of forward angle spectra corresponding to the mutual excitation of the reaction partners with net mass transfer zero projected onto the Q-value variable show an enhancement at Q-values of -60 - -80 MeV (excitation energies of the reaction partners equal to 30 - 40 MeV). This energy range coincides with the region of 2ℎω - 3ℎω excitations characteristic for giant osciallations. This selective excitation, which occurs at a very early stage of the reaction (the cross section is the largest at very forward angles), provides an important doorway to other dissipative processes

  11. VALORACIÓN DEL RIESGO FINANCIERO (CFAR EN LAS EPS A TRAVÉS DE OPCIONES REALES: UNA APLICACIÓN AL NIVEL DE ATENCIÓN IV Financial Risk Valuation (CFARin EPS's through Real Options: An Application at the IV Assistance Level

    Directory of Open Access Journals (Sweden)

    Mónica A. Arango Arango

    2011-12-01

    Full Text Available El número de pacientes tratados por insuficiencia renal en Colombia es cada vez mayor; por esta razón conocer los costos asociados a esta enfermedad es una necesidad manifiesta de las Entidades Promotoras de Salud con el fin de garantizar la estabilidad del Sistema de Seguridad Social en Salud. Este trabajo evalúa financieramente, mediante opciones reales, la posibilidad de hacer un trasplante de riñón en un paciente bajo tratamiento de insuficiencia renal y el Flujo de Caja en Riesgo al tener en cuenta esta opción. Se encontró que al hacer un análisis periódico de los costos asociados a continuar con el tratamiento, existen casos en los que es más eficiente hacer el trasplante, disminuyendo el valor presente de las erogaciones del paciente, mejorando el flujo de caja en riesgo y controlando los gastos futuros de la entidad que lo atiende.Number of patients treated for renal failure in Colombia is increasingly high; for this reason, knowing the costs associated to this disease is a clear need for Health Promoting Entities with the purpose of assuring stability of the Health Social Security System. Through real options, this article is a financial evaluation of the possibility of conducting a kidney transplant in a patient being under a renal failure treatment and the cash flow at risk when having this as an option. It was found that when a periodical analysis of costs associated to continuation of treatment is made, there are cases where transplant is a more efficient option to be executed since the present value of the patient's expenses is decreased, thus improving the cash flow at risk and controlling future expenses of the entity treating the patient.

  12. Binomial tree for option valuation process derived from stochastic autonomous differential equation Árboles binomiales para la valoración de opciones sobre procesos derivados de la ecuación diferencial estocástica autónoma

    Directory of Open Access Journals (Sweden)

    Freddy Marín-Sánchez

    2010-12-01

    Full Text Available In this paper we propose a multiplicative generalized binomial trees recombination associated with the autonomous equation in terms of the initial condition and the product of non-constant upwards and downwards jumps from the discretized process. We present a formal technique for finding the dynamic transition probabilities involving the first two moments of the solution to the differential equation, which incorporate the factor of growth and volatility in terms of the parameters and the underlying process along its branching. Some experimental numerical results are shown for European option pricing for lognormal process and the processes of mean reversion with additive noise and proportional noise for different expiration dates.En este trabajo se propone una recombinación en árboles binomiales multiplicativageneralizada para la ecuación autónoma, en términos de la condición inicial y del producto entre saltos no constantes hacia arriba y hacia abajo delproceso discretizado. Se presenta de manera formal una técnica para encontrarlas probabilidades de transición dinámicas considerando los dos primeros momentos del proceso solución de la ecuación diferencial, los cuales incorporanel factor de crecimiento y la volatilidad en términos de los parámetrosy del proceso subyacente a lo largo de su ramificación. Se muestran algunosresultados numéricos experimentales de valoración de opciones Europeas parael proceso log–normal y para los procesos de reversión a la media con ruidoaditivo y ruido proporcional para diferentes fechas de expiración.

  13. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  14. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  15. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  16. Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

    International Nuclear Information System (INIS)

    Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

  17. Gas leak tightness of SiC/SiC composites at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hayasaka, Daisuke, E-mail: hayasaka@oasis.muroran-it.ac.jp [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Park, Joon-Soo. [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE-SiC/SiC has extremely densified microstructure compared with other SiC/SiC composite like CVI. • Excellent helium and hydrogen gas-leak tightness of SiC/SiC composites by DEMO-NITE method from prototype industrialization production line was presented. • The excellence against stainless steel and Zircaloy at elevated temperature, together with generic excellent properties of SiC will be inevitable for innovative blanket and divertors for DEMO- and power- fusion reactors. - Abstract: SiC/SiC composite materials are attractive candidates for high heat flux components and blanket of fusion reactor, mainly due to their high temperature properties, radiation damage tolerance and low induced radioactivity. One of the challenges for SiC/SiC application in fusion reactors is to satisfy sufficient gas leak tightness of hydrogen and helium isotopes. Although many efforts have been carried-out, SiC/SiC composites by conventional processes have not been successful to satisfy the requirements, except SiC/SiC composites by NITE-methods. Toward the early realization of SiC/SiC components into fusion reactor systems process development of NITE-process has been continued. Followed to the brief introduction of recently developed DEMO-NITE process, baseline properties and hydrogen and helium gas leak tightness is presented. SiC/SiC claddings with 10 mm in diameter and 1 mm in wall thickness are tested by gas leak tightness system developed. The leak tightness measurements are done room temperature to 400 °C. Excellent gas leak tightness equivalent or superior to Zircaloy claddings for light water fission reactors is confirmed. The excellent gas leak tightness suggests nearly perfect suppression of large gas leak path in DEMO-NITE SiC/SiC.

  18. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  19. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  20. Growth of CoSi2 on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Lim, C.W.; Shin, C.-S.; Gall, D.; Zuo, J.M.; Petrov, I.; Greene, J.E.

    2005-01-01

    CaF 2 -structure CoSi 2 layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi 2 layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi 2 formed at 600 deg. C. However, in the case of RDE, CoSi 2 formation occurred during Co deposition while for SPG, Co was deposited at 25 deg. C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi 2 layers are epitaxial with a cube-on-cube relationship (001) CoSi 2 parallel (001) Si and [100] CoSi 2 parallel[100] Si . In contrast, SPG films are polycrystalline with an average grain size of ≅1000 A and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases--from orthorhombic Co 2 Si to cubic CoSi to CoSi 2 --during SPG results in polycrystalline layers with a complex texture

  1. High resolution investigation of the 30Si(þ, þ)30Si reaction

    NARCIS (Netherlands)

    Walinga, J.; Rinsvelt, H.A. van; Endt, P.M.

    The differential cross section for elastic scattering of protons on 30Si was measured with surface barrier counters at four angles. Thirty-six 30Si(þ, γ)31P resonances are known in the Ep=1–2MeV region. Fifteen of these were also observed in the 30Si(þ, þ)30Si reaction, with natural widths varying

  2. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo; Yoo, Tae Jin; Kim, Jin Tae; Pak, Yusin; Kumaresan, Yogeenth; Kim, Hyeonghun; Kim, Woochul; Lee, Byoung Hun; Jung, Gun Young

    2018-01-01

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates

  3. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the

  4. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

    Directory of Open Access Journals (Sweden)

    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  5. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  6. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    International Nuclear Information System (INIS)

    Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-01-01

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

  7. Si quantum dot structures and their applications

    Science.gov (United States)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  8. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  9. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  10. Stability analysis of SiO2/SiC multilayer coatings

    International Nuclear Information System (INIS)

    Fu Zhiqiang; Jean-Charles, R.

    2006-01-01

    The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

  11. (113) Facets of Si-Ge/Si Islands; Atomic Scale Simulation

    Science.gov (United States)

    Kassem, Hassan

    We have studied, by computer simulation, some static and vibrationnal proprieties of SiGe/Si islands. We have used a Valence Force Field combined to Monte Carlo technique to study the growth of Ge and SiGe on (001)Si substrates. We have focalised on the case of large pyramidal islands presenting (113) facets on the free (001)Si surface with various non uniform composition inside the islands. The deformation inside the islands and Raman spectroscopy are discussed.

  12. Porous SiC/SiC composites development for industrial application

    International Nuclear Information System (INIS)

    Maeta, S.; Hinoki, T.

    2014-01-01

    Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

  13. Double transparent conducting layers for Si photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Ju-Hyung [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Kim, Joondong, E-mail: joonkim@incheon.ac.kr [Department of Electrical Engineering, Incheon National University, Incheon, 406772 (Korea, Republic of); Park, Yun Chang [Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305806 (Korea, Republic of); Moon, Sang-Jin [Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Anderson, Wayne A. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

    2013-11-29

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process.

  14. Dynamic behaviors of laser ablated Si particles

    International Nuclear Information System (INIS)

    Ohyanagi, T.; Murakami, K.; Miyashita, A.; Yoda, O.

    1995-01-01

    The dynamics of laser-ablated Si particles produced by laser ablation have been investigated by time-and-space resolved X-ray absorption spectroscopy in a time scale ranging from 0 ns to 120 ns with a time resolution of 10 ns. Neutral and charged particles are observed through all X-ray absorption spectra. Assignments of transitions from 2s and 2p initial states to higher Rydberg states of Si atom and ions are achieved, and we experimentally determine the L II,III absorption edges of neutral Si atom (Si 0 ) and Si + , Si 2+ , Si 3+ and Si 4+ ions. The main ablated particles are found to be Si atom and Si ions in the initial stage of 0 ns to 120 ns. The relative amounts depend strongly on times and laser energy densities. We find that the spatial distributions of particles produced by laser ablation are changed with supersonic helium gas bombardment, but no cluster formation takes place. This suggests that a higher-density region of helium gas is formed at the top of the plume of ablated particles, and free expansion of particles is restrained by this helium cloud, and that it takes more than 120 ns to form Si clusters. (author)

  15. Double transparent conducting layers for Si photovoltaics

    International Nuclear Information System (INIS)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang; Moon, Sang-Jin; Anderson, Wayne A.

    2013-01-01

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process

  16. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

    International Nuclear Information System (INIS)

    Varzgar, John B.; Kanoun, Mehdi; Uppal, Suresh; Chattopadhyay, Sanatan; Tsang, Yuk Lun; Escobedo-Cousins, Enrique; Olsen, Sarah H.; O'Neill, Anthony; Hellstroem, Per-Erik; Edholm, Jonas; Ostling, Mikael; Lyutovich, Klara; Oehme, Michael; Kasper, Erich

    2006-01-01

    The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox ) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 x 10 4 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 x 10 5 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj ) compared to Q inj in bulk Si. Current-voltage (I-V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5 x 10 4 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si

  17. Choices Outlined 2013-2017. An analysis of ten election programmes for accessibility effects. PBL-CPB background document; Keuzes in kaart 2013-2017. Een analyse van tien verkiezingsprogramma's op bereikbaarheidseffecten. PBL-CPB Achtergronddocument

    Energy Technology Data Exchange (ETDEWEB)

    Zwaneveld, P.; Verrips, A. [CPB Netherlands Bureau for Economic Policy Analysis, The Hague (Netherlands); Hilbers, H.; Zondag, B.; Van Meerkerk, J. [Planbureau voor de Leefomgeving PBL, Den Haag (Netherlands); Weijschede-van der Straaten, W. [CBS Statistics Netherlands, The Hague (Netherlands)

    2012-11-15

    In their report 'Keuzes in Kaart 2013-2017' (Choices outlined 2013-2017) the Netherlands Bureau for Economic Policy Analysis (CPB) and the Environmental Assessment Agency (PBL) made calculations for thirteen themes of the election programs of ten Dutch political parties. Accessibility is one of these thirteen themes. Analyses on this theme were conducted jointly by PBL and CPB. This paper addresses which different political choices the Dutch parties have made for the theme of accessibility, how PBL and CPB conducted analyses and which results were yielded. The effect of the party program is compared to a basic path, the expected image for 2020 based on implementation of the Budget Agreement 2013 ('Spring Agreement'). [Dutch] Het Centraal Planbureau (CPB) en het Planbureau voor de Leefomgeving (PBL) hebben in het rapport 'Keuzes in Kaart 2013-2017' de verkiezingsprogramma's van tien politieke partijen doorgerekend op dertien thema's. Bereikbaarheid is één van de dertien thema's. De analyses rond dit thema zijn gezamenlijk uitgevoerd door PBL en CPB. Dit paper gaat in op welke verschillende politieke keuzes de partijen ten aanzien van bereikbaarheid hebben gemaakt, op welke wijze de planbureaus dit hebben geanalyseerd en tot welke resultaten dit heeft geleid. Het effect van het partijprogramma wordt vergeleken met het 'basispad', het verwachte beeld voor 2020 uitgaande van uitvoering van het Begrotingsakkoord 2013 (het 'Lenteakkoord')

  18. Innovative SiC/SiC composite for nuclear applications

    International Nuclear Information System (INIS)

    Chaffron, L.; Sauder, C.; Lorrette, C.; Briottet, L.; Michaux, A.; Gelebart, L.; Coupe, A.; Zabiego, M.; Le Flem, M.; Seran, J. L.

    2013-01-01

    Among various refractory materials, SiC/SiC ceramic matrix composites (CMC) are of prime interest for fusion and advanced fission energy applications, due to their excellent irradiation tolerance and safety features (low activation, low tritium permeability,K). Initially developed as fuel cladding materials for the Fourth generation Gas cooled Fast Reactor (GFR), this material has been recently envisaged by CEA for different core structures of Sodium Fast Reactor (SFR) which combines fast neutrons and high temperature (500 deg.C). Regarding fuel cladding generic application, in the case of GFR, the first challenge facing this project is to demonstrate the feasibility of a fuel operating under very harsh conditions that are (i) temperatures of structures up to 700 deg.C in nominal and over 1600 deg.C in accidental conditions, (ii) irradiation damage higher than 60 dpa SiC , (iii) neutronic transparency, which disqualifies conventional refractory metals as structural core materials, (iv) mechanical behavior that guarantees in most circumstances the integrity of the first barrier (e.g.: ε> 0.5%), which excludes monolithic ceramics and therefore encourages the development of new types of fibrous composites SiC/SiC adapted to the fast reactor conditions. No existing material being capable to match all these requirements, CEA has launched an ambitious program of development of an advanced material satisfying the specifications [1]. This project, that implies many laboratories, inside and outside CEA, has permitted to obtain a very high quality compound that meets most of the challenging requirements. We present hereinafter few recent results obtained regarding the development of the composite. One of the most relevant challenges was to make a gas-tight composite up to the ultimate rupture. Indeed, multi-cracking of the matrix is the counterpart of the damageable behavior observed in these amazing compounds. Among different solutions envisaged, an innovative one has been

  19. Characterization of defects in Si and SiO2-Si using positrons

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; Lynn, K.G.

    1993-01-01

    Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed

  20. MuSiK Projekt:Multimaterialdruck von C/Si/SiC-Keramiken

    OpenAIRE

    Marigo, Gloria; Wahl, Larissa; Nauditt, Gotthard

    2017-01-01

    Poster über den ersten 6 Monate von MuSiK Projekt. Additive Verfahren wurden ursprünglich zur effizienten Herstellung von Mustern und Prototypen entwickelt und bieten besondere Einsatzpotentiale, die mittlerweile auch für die Kleinserienproduktion hochinteressant sind. Im Bereich der keramischen Komponenten ist der Einsatz additiver Verfahren bislang nicht weit verbreitet. Ein Grund dafür ist unter anderem die eingeschränkte Verfügbarkeit der notwendigen Fertigungsanlagen und entsprech...

  1. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  2. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  3. Mechanical behavior of SiCf/SiC composites with alternating PyC/SiC multilayer interphases

    International Nuclear Information System (INIS)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-01-01

    Highlights: ► Superior combination of flexural strength and fracture toughness of the 3D SiC/SiC composite was achieved by interface tailoring. ► Resulted composite possesses a much higher flexural strength and fracture toughness than its counterparts in literatures. ► Mechanisms that PyC/SiC multilayer coatings improve the mechanical properties were illustrated. -- Abstract: In order to tailor the fiber–matrix interface of continuous silicon carbide fiber reinforced silicon carbide (SiC f /SiC) composites for improved fracture toughness, alternating pyrolytic carbon/silicon carbide (PyC/SiC) multilayer coatings were applied to the KD-I SiC fibers using chemical vapor deposition (CVD) method. Three dimensional (3D) KD-I SiC f /SiC composites reinforced by these coated fibers were fabricated using a precursor infiltration and pyrolysis (PIP) process. The interfacial characteristics were determined by the fiber push-out test and microstructural examination using scanning electron microscopy (SEM). The effect of interface coatings on composite mechanical properties was evaluated by single-edge notched beam (SENB) test and three-point bending test. The results indicate that the PyC/SiC multilayer coatings led to an optimum interfacial bonding between fibers and matrix and greatly improved the fracture toughness of the composites.

  4. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  5. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  6. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  7. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  8. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  9. Comparative study of anisotropic superconductivity in CaAlSi and CaGaSi

    International Nuclear Information System (INIS)

    Tamegai, T.; Uozato, K.; Kasahara, S.; Nakagawa, T.; Tokunaga, M.

    2005-01-01

    In order to get some insight into the origin of the anomalous angular dependence of H c2 in a layered intermetallic compound CaAlSi, electronic, superconducting, and structural properties are compared between CaAlSi and CaGaSi. The angular dependence of H c2 in CaGaSi is well described by the anisotropic GL model. Parallel to this finding, the pronounced lattice modulation accompanying the superstructure along the c-axis in CaAlSi is absent in CaGaSi. A relatively large specific heat jump at the superconducting transition in CaAlSi compared with CaGaSi indicates the presence of strong electron-phonon coupling in CaAlSi, which may cause the superstructure and the anomalous angular dependence of H c2

  10. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  11. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  12. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad; Bendjeriou-Sedjerari, Anissa; Huang, Kuo-Wei; Basset, Jean-Marie

    2014-01-01

    : [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage

  13. Impact resistance of uncoated SiC/SiC composites

    International Nuclear Information System (INIS)

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 deg. C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded. At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained ∼50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing

  14. Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

    Science.gov (United States)

    Hasanah, L.; Suhendi, E.; Khairrurijal

    2018-05-01

    Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

  15. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  16. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires

    CSIR Research Space (South Africa)

    Thabethe, S

    2014-12-01

    Full Text Available Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF...

  17. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

    International Nuclear Information System (INIS)

    Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

    2013-01-01

    We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

  18. Si K-edge XANES study of SiOxCyHz amorphous polymeric materials

    International Nuclear Information System (INIS)

    Chaboy, J.; Barranco, A.; Yanguas-Gil, A.; Yubero, F.; Gonzalez-Elipe, A. R.

    2007-01-01

    This work reports on x-ray absorption spectroscopy study at the Si K edge of several amorphous SiO x C y H z polymers prepared by plasma-enhanced chemical-vapor deposition with different C/O ratios. SiO 2 and SiC have been used as reference materials. The comparison of the experimental Si K-edge x-ray absorption near-edge structure spectra with theoretical computations based on multiple scattering theory has allowed us to monitor the modification of the local coordination around Si as a function of the overall C/O ratio in this kind of materials

  19. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  20. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  1. Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

    International Nuclear Information System (INIS)

    Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

    2007-01-01

    Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

  2. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  3. Charted Choices 2013-2017. An analysis of ten election programmes. Effects on the economy and the environment; Keuzes in Kaart 2013-2017. Een analyse van tien verkiezingsprogramma's. Effecten op economie en milieu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2010-05-15

    At the request of ten political parties, the Netherlands Bureau for Economic Policy Analysis (CPB) and PBL Netherlands Environmental Assessment Agency have mapped out the effects of the respective election platforms on the economy and the environment. The analysis shows that each of the proposed policy measures included in the platforms has both advantages and disadvantages. The platforms thus reflect the diverse choices that have been made by the parties. The publication presents the impact of party programs on public finances, purchasing power and employment. Also included in the publication are analyses in the field of mobility, energy and climate, nature, education, housing and healthcare [Dutch] De verkiezingsprogramma's 2012 laten zien welke keuzes politieke partijen maken voor de jaren 2013-2017. De programma's tonen aan dat er echt iets te kiezen valt voor de komende kabinetsperiode. Hoe gaan we na de economische crisis de overheidsfinancien weer op orde brengen en hoe snel? Verhogen we de AOW-leeftijd en beperken we de aftrek van de hypotheekrente, of juist niet? Hoe verminderen we de filedruk? Willen we klimaatverandering aanpakken en zo ja, hoe dan? Is het de moeite waarde om meer geld uit te geven aan onderwijs of innovatie? Hoeveel trekken we uit voor natuur? Hoe kunnen we de woningmarkt beter laten functioneren? Hoe gaan we om met de stijging van de kosten van de zorg? In de aanloop naar de verkiezingen van 12 september 2012 hebben tien politieke partijen - VVD, PvdA, PVV, CDA, SP, D66, GroenLinks, ChristenUnie, SGP, DPK - gevraagd om een analyse van hun verkiezingsprogramma's. Het CPB heeft de economische effecten geanalyseerd, het PBL de effecten op milieu.

  4. Charted Choices 2013-2017. An analysis of ten election programmes. Effects on the economy and the environment; Keuzes in Kaart 2013-2017. Een analyse van tien verkiezingsprogramma's. Effecten op economie en milieu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2010-05-15

    At the request of ten political parties, the Netherlands Bureau for Economic Policy Analysis (CPB) and PBL Netherlands Environmental Assessment Agency have mapped out the effects of the respective election platforms on the economy and the environment. The analysis shows that each of the proposed policy measures included in the platforms has both advantages and disadvantages. The platforms thus reflect the diverse choices that have been made by the parties. The publication presents the impact of party programs on public finances, purchasing power and employment. Also included in the publication are analyses in the field of mobility, energy and climate, nature, education, housing and healthcare [Dutch] De verkiezingsprogramma's 2012 laten zien welke keuzes politieke partijen maken voor de jaren 2013-2017. De programma's tonen aan dat er echt iets te kiezen valt voor de komende kabinetsperiode. Hoe gaan we na de economische crisis de overheidsfinancien weer op orde brengen en hoe snel? Verhogen we de AOW-leeftijd en beperken we de aftrek van de hypotheekrente, of juist niet? Hoe verminderen we de filedruk? Willen we klimaatverandering aanpakken en zo ja, hoe dan? Is het de moeite waarde om meer geld uit te geven aan onderwijs of innovatie? Hoeveel trekken we uit voor natuur? Hoe kunnen we de woningmarkt beter laten functioneren? Hoe gaan we om met de stijging van de kosten van de zorg? In de aanloop naar de verkiezingen van 12 september 2012 hebben tien politieke partijen - VVD, PvdA, PVV, CDA, SP, D66, GroenLinks, ChristenUnie, SGP, DPK - gevraagd om een analyse van hun verkiezingsprogramma's. Het CPB heeft de economische effecten geanalyseerd, het PBL de effecten op milieu.

  5. Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

    International Nuclear Information System (INIS)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi

    2012-01-01

    β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

  6. Matrix densification of SiC composites by sintering process

    International Nuclear Information System (INIS)

    Kim, Young-Wook; Jang, Doo-Hee; Eom, Jung-Hye; Chun, Yong-Seong

    2007-02-01

    The objectives of this research are to develop a process for dense SiC fiber-SiC composites with a porosity of 5% or less and to develop high-strength SiC fiber-SiC composites with a strength of 500 MPa or higher. To meet the above objectives, the following research topics were investigated ; new process development for the densification of SiC fiber-SiC composites, effect of processing parameters on densification of SiC fiber-SiC composites, effect of additive composition on matrix microstructure, effects of additive composition and content on densification of SiC fiber-SiC composites, mechanical properties of SiC fiber-SiC composites, effect of fiber coating on densification and strength of SiC fiber-SiC composites, development of new additive composition. There has been a great deal of progress in the development of technologies for the processing and densification of SiC fiber-SiC composites and in better understanding of additive-densification-mechanical property relations as results of this project. Based on the progress, dense SiC fiber-SiC composites (≥97%) and high strength SiC fiber-SiC composites (≥600 MPa) have been developed. Development of 2D SiC fiber-SiC composites with a relative density of ≥97% and a strength of ≥600 MPa can be counted as a notable achievement

  7. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

    Science.gov (United States)

    Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

    2017-05-25

    The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  8. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

    Directory of Open Access Journals (Sweden)

    Lianbi Li

    2017-05-01

    Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  9. Electrical resistivity and thermal conductivity of SiC/Si ecoceramics prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Gutierrez-Pardo, A.; Ramirez-Rico, J.

    2012-10-01

    Samples of β-SiC/Si ecoceramics with a silicon concentration of ˜21 vol % have been prepared using a series of consecutive procedures (carbonization of sapele wood biocarbon, synthesis of high-porosity biocarbon with channel-type pores, infiltration of molten silicon into empty channels of the biocarbon, formation of β-SiC, and retention of residual silicon in channels of β-SiC). The electrical resistivity ρ and thermal conductivity κ of the β-SiC/Si ecoceramic samples have been measured in the temperature range 5-300 K. The values of ρ{Si/chan}( T) and κ{Si/chan}( T) have been determined for silicon Sichan located in β-SiC channels of the synthesized β-SiC/Si ecoceramics. Based on the performed analysis of the obtained results, the concentration of charge carriers (holes) in Sichan has been estimated as p ˜ 1019 cm-3. The factors that can be responsible for such a high value of p have been discussed. The prospects for practical application of β-SiC/Si ecoceramics have been considered.

  10. Polarized luminescence of nc-Si-SiO x nanostructures on silicon substrates with patterned surface

    Science.gov (United States)

    Michailovska, Katerina; Mynko, Viktor; Indutnyi, Ivan; Shepeliavyi, Petro

    2018-05-01

    Polarization characteristics and spectra of photoluminescence (PL) of nc-Si-SiO x structures formed on the patterned and plane c-Si substrates are studied. The interference lithography with vacuum chalcogenide photoresist and anisotropic wet etching are used to form a periodic relief (diffraction grating) on the surface of the substrates. The studied nc-Si-SiO x structures were produced by oblique-angle deposition of Si monoxide in vacuum and the subsequent high-temperature annealing. The linear polarization memory (PM) effect in PL of studied structure on plane substrate is manifested only after the treatment of the structures in HF and is explained by the presence of elongated Si nanoparticles in the SiO x nanocolumns. But the PL output from the nc-Si-SiO x structure on the patterned substrate depends on how this radiation is polarized with respect to the grating grooves and is much less dependent on the polarization of the exciting light. The measured reflection spectra of nc-Si-SiO x structure on the patterned c-Si substrate confirmed the influence of pattern on the extraction of polarized PL.

  11. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  12. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  13. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  14. siRNA and innate immunity.

    Science.gov (United States)

    Robbins, Marjorie; Judge, Adam; MacLachlan, Ian

    2009-06-01

    Canonical small interfering RNA (siRNA) duplexes are potent activators of the mammalian innate immune system. The induction of innate immunity by siRNA is dependent on siRNA structure and sequence, method of delivery, and cell type. Synthetic siRNA in delivery vehicles that facilitate cellular uptake can induce high levels of inflammatory cytokines and interferons after systemic administration in mammals and in primary human blood cell cultures. This activation is predominantly mediated by immune cells, normally via a Toll-like receptor (TLR) pathway. The siRNA sequence dependency of these pathways varies with the type and location of the TLR involved. Alternatively nonimmune cell activation may also occur, typically resulting from siRNA interaction with cytoplasmic RNA sensors such as RIG1. As immune activation by siRNA-based drugs represents an undesirable side effect due to the considerable toxicities associated with excessive cytokine release in humans, understanding and abrogating this activity will be a critical component in the development of safe and effective therapeutics. This review describes the intracellular mechanisms of innate immune activation by siRNA, the design of appropriate sequences and chemical modification approaches, and suitable experimental methods for studying their effects, with a view toward reducing siRNA-mediated off-target effects.

  15. SiD Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  16. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  17. Characterization of SiC–SiC composites for accident tolerant fuel cladding

    Energy Technology Data Exchange (ETDEWEB)

    Deck, C.P., E-mail: Christian.Deck@ga.com; Jacobsen, G.M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H.E.; Back, C.A.

    2015-11-15

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC–SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC–SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  18. Mechanism of Si intercalation in defective graphene on SiC

    KAUST Repository

    Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo; Upadhyay Kahaly, M.

    2012-01-01

    Previously reported experimental findings on Si-intercalated graphene on SiC(0001) seem to indicate the possibility of an intercalation process based on the migration of the intercalant through atomic defects in the graphene sheet. We employ density

  19. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  20. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  1. Dielectric Properties of SiCf/PyC/SiC Composites After Oxidation

    Institute of Scientific and Technical Information of China (English)

    SONG Huihui; ZHOU Wancheng; LUO Fa; QING Yuchang; CHEN Malin; LI Zhimin

    2016-01-01

    In this paper, the SiC fiber-reinforced SiC matrix composites with a 0.15mm thick pyrocarbon interphase (notedas SiCf/PyC/SiC) were prepared by chemical vapor infiltration (CVI). The SiCf/PyC/SiC were oxidized in air at 950℃ for 50h. The dielectric properties after this high temperature oxidation were investigated in X-band from room temperature (RT) to 700℃. Results suggested that:e' of the SiCf/PyC/SiC after oxidation increased at first then de-creased with temperature elevating;e" increased with temperature raising in the temperature range studied.

  2. Fermi surfaces of YRu2Si2 and LaRu2Si2

    International Nuclear Information System (INIS)

    Settai, R.; Ikezawa, H.; Toshima, H.; Takashita, M.; Ebihara, T.; Sugawara, H.; Kimura, T.; Motoki, K.; Onuki, Y.

    1995-01-01

    We have measured the de Haas-van Alphen effect of YRu 2 Si 2 and LaRu 2 Si 2 to clarify the Fermi surfaces and cyclotron masses. Main hole-Fermi surfaces of both compounds with a distorted ellipsoid shape are similar, occupying about half of the Brillouin zone. The small hole-Fermi surfaces with the shape of a rugby ball are three in number for LaRu 2 Si 2 , and one for YRu 2 Si 2 . An electron-Fermi surface consists of a doughnut like shape for LaRu 2 Si 2 , while a cylinder along the [001] direction and a multiply-connected shape exist for YRu 2 Si 2 . The cyclotron masses of YRu 2 Si 2 are a little larger than those of LaRu 2 Si 2 . ((orig.))

  3. A sensitive optical sensor based on DNA-labelled Si@SiO2 core ...

    Indian Academy of Sciences (India)

    2017-10-31

    Oct 31, 2017 ... Si@SiO2 core–shell nanoparticles were proposed for the development of fluorescent mercury ... orophores, due to their unique optical properties, such as .... were made by evaporating one drop of the sample solution on.

  4. Ni-Si oxide as an inducing crystallization source for making poly-Si

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Zhiguo; Liu, Zhaojun; Li, Juan; Wu, Chunya; Xiong, Shaozhen [Institute of Photo-electronics, Nankai University, Tianjin (China); Zhao, Shuyun; Wong, Man; Kwok, Hoi Sing [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China)

    2010-04-15

    Nickel silicon oxide mixture was sputtered on a-Si with Ni-Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly-Si materials induced by Ni-Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly-Si. Besides, it reduced the residual Ni content in the resulted poly-Si film. The transfer characteristic curve of poly-Si TFT and a TFT-OLED display demo made with this kind of new inducing source were also presented in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Rod-like β-FeSi2 phase grown on Si (111) substrate

    International Nuclear Information System (INIS)

    Han Ming; Tanaka, Miyoko; Takeguchi, Masaki; Furuya, Kazuo

    2004-01-01

    Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7x7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi 2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi 2 phase. Upon annealing at 1073 K, the metastable c-FeSi 2 transforms into equilibrium β-FeSi 2 phase, the latter inherits completely the morphology of c-FeSi 2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting β-FeSi 2 on a Si substrate has been proposed in the present work

  6. Development of SiC/SiC composite for fusion application

    International Nuclear Information System (INIS)

    Kohyama, A.; Katoh, Y.; Snead, L.L.; Jones, R.H.

    2001-01-01

    The recent efforts to develop SiC/SiC composite materials for fusion application under the collaboration with Japan and the USA are provided, where material performance with and without radiation damage has been greatly improved. One of the accomplishments is development of the high performance reaction sintering process. Mechanical and thermal conductivity are improved extensively by process modification and optimization with inexpensive fabrication process. The major efforts to make SiC matrix by CVI, PIP and RS methods are introduced together with the representing baseline properties. The resent results on mechanical properties of SiC/SiC under neutron irradiation are quite positive. The composites with new SiC fibers, Hi-Nicalon Type-S, did not exhibit mechanical property degradation up to 10 dpa. Based on the materials data recently obtained, a very preliminary design window is provided and the future prospects of SiC/SiC technology integration is provided. (author)

  7. Effect of irradiation on thermal expansion of SiCf/SiC composites

    International Nuclear Information System (INIS)

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

  8. Hybrid Integrated Si/SiN Platforms for Wideband Optical Processing

    Science.gov (United States)

    2017-05-08

    annealing process, makes the process prone to dopant redistribution, that hinderers the SiN deposition after full Si device fabrication. To resolve...with 220 nm of crystalline Si. In parallel, a Si die goes through a wet oxidation process to grow 5 μm of thermal oxide. In the next step, 400 nm of... annealing methods. As a figure of merit in hydrophilic bonding, we monitored the surface roughness and bonding strength of a thin oxide layer to

  9. Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate

    International Nuclear Information System (INIS)

    Hattori, Azusa N.; Hattori, Ken; Kodama, Kenji; Hosoito, Nobuyoshi; Daimon, Hiroshi

    2007-01-01

    Epitaxial β-FeSi 2 thin films were grown on Si(111)7x7 clean surfaces by solid phase epitaxy in ultrahigh vacuum: iron deposition at low temperature and subsequent annealing. We found that a ferromagnetic interface layer of iron-rich silicides forms between a β-FeSi 2 surface layer and a Si(111) substrate spontaneously from transmission electron microscopy observations and magnetization measurements

  10. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Jones, R.H.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

  11. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  12. Valoración de derivados financieros: las opciones europeas

    OpenAIRE

    Ojos Araúzo, Pablo de los

    2016-01-01

    Desde la publicación de los trabajos de Black-Scholes y de Merton en 1973, la valoración de derivados financieros ha cobrado una importancia capital en el mundo de las inversiones, habiéndose desarrollado desde entonces una extensa literatura sobre el tema. En paralelo, el comercio con derivados financieros ha aumentado exponencialmente en todos los mercados financieros, estando estrechamente relacionado con la reciente crisis financiera. Por tanto, en este trabajo estudiamo...

  13. Nuclear energy: a necessary option; Energia nuclear: una opcion necesaria

    Energy Technology Data Exchange (ETDEWEB)

    Robles N, A. G. [Comision Federal de Electricidad, Periferico Sur No. 4156, Col. Jardines del Pedregal, 01900 Ciudad de Mexico (Mexico); Ramirez S, J. R.; Esquivel E, J., E-mail: ambar.robles@cfe.gob.mx [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2017-09-15

    With the decree of the Energy Reform and with the creation of the Electricity Industry and Energy Transition Laws; nuclear energy is incorporated into these as a source of clean energy. Currently, the share of electricity generation using conventional technologies is 80% and clean technologies of 20% of which hydroelectric plants represent 50% of these. While the operation of hydroelectric, wind, solar plants, etc. have contributed to reduce greenhouse gas emissions (GGE), the global effort to mitigate climate change has not observed the expected results, according to the meeting of COP 21 in Paris, where 196 countries agreed, unanimously, to limit the increase of the temperature at 2 degrees Celsius or less for before the year 2100. In Paris, Mexico voluntarily submitted its national mitigation and adaptation contribution to climate change by issuing 162 M ton of CO{sub 2eq} as a goal to 2030, that is a ΔGGE of -22%. This means that the electricity sector should contribute to the reduction of 139 M ton of CO{sub 2eq} and a ΔGGE of -31%. According to some experts, the goal of reducing gases for the sector could be achieved during the period defined in the Agreement, provided that the share of clean energies is added as established in the Energy Reform and the Development Program of the National Electric System 2016-2030, which establishes the addition of 35,532 MW (62%) of installed capacity in clean technologies, where nuclear energy participates with 4,191 MW (7%) that is, 2,651 MW more. Thus, this article aims to show the importance of the use of nuclear energy in the electricity sector to reduce GGE, achieve international commitments and combat climate change. (Author)

  14. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; E. Louis,; F. Bijkerk,

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We

  15. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Directory of Open Access Journals (Sweden)

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  16. siRNAmod: A database of experimentally validated chemically modified siRNAs.

    Science.gov (United States)

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-28

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod.

  17. Tunable Synthesis of SiC/SiO2 Heterojunctions via Temperature Modulation

    Directory of Open Access Journals (Sweden)

    Wei Li

    2018-05-01

    Full Text Available A large-scale production of necklace-like SiC/SiO2 heterojunctions was obtained by a molten salt-mediated chemical vapor reaction technique without a metallic catalyst or flowing gas. The effect of the firing temperature on the evolution of the phase composition, microstructure, and morphology of the SiC/SiO2 heterojunctions was studied. The necklace-like SiC/SiO2 nanochains, several centimeters in length, were composed of SiC/SiO2 core-shell chains and amorphous SiO2 beans. The morphologies of the as-prepared products could be tuned by adjusting the firing temperature. In fact, the diameter of the SiO2 beans decreased, whereas the diameter of the SiC fibers and the thickness of the SiO2 shell increased as the temperature increased. The growth mechanism of the necklace-like structure was controlled by the vapor-solid growth procedure and the modulation procedure via a molten salt-mediated chemical vapor reaction process.

  18. Status and prospects for SiC-SiC composite materials development for fusion applications

    International Nuclear Information System (INIS)

    Sharafat, S.; Jones, R.H.; Kohyama, A.; Fenici, P.

    1995-01-01

    Silicon carbide (SiC) composites are very attractive for fusion applications because of their low afterheat and low activation characteristics coupled with excellent high temperature properties. These composites are relatively new materials that will require material development as well as evaluation of hermiticity, thermal conductivity, radiation stability, high temperature strength, fatigue, thermal shock, and joining techniques. The radiation stability of SiC-SiC composites is a critical aspect of their application as fusion components and recent results will be reported. Many of the non-fusion specific issues are under evaluation by other ceramic composite development programs, such as the US national continuous fiber ceramic composites.The current development status of various SiC-SiC composites research and development efforts is given. Effect of neutron irradiation on the properties of SiC-SiC composite between 500 and 1200 C are reported. Novel high temperature properties specific to ceramic matrix composite (CMC) materials are discussed. The chemical stability of SiC is reviewed briefly. Ongoing research and development efforts for joining CMC materials including SiC-SiC composites are described. In conclusion, ongoing research and development efforts show extremely promising properties and behavior for SiC-SiC composites for fusion applications. (orig.)

  19. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  20. Addimer diffusions on Si(100)

    International Nuclear Information System (INIS)

    Lee, Gun Do; Wang, C. Z.; Lu, Z. Y.; Ho, K. M.

    1999-01-01

    The diffusion pathways along the trough and between the trough and the dimer row on the Si(100) surface are investigated by tight-binding molecular dynamics calculations using the environment dependent tight-binding silicon potential and by ab initio calculations using the Car-Parrinello method. The studies discover new diffusion pathways consisting of rotation of addimer. The calculated energy barrier are in excellent agreement with experiment. The rotational diffusion pathway between the trough and the dimer row is much more energetically favorable than other diffusion pathways by parallel and perpendicular addimer. The new pathway along the trough is nearly same as the energy barrier of the diffusion pathway by dissociation of the addimer

  1. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  2. Transformation of sludge Si to nano-Si/SiOx structure by oxygen inward diffusion as precursor for high performance anodes in lithium ion batteries

    Science.gov (United States)

    Hua, Qiqi; Dai, Dongyang; Zhang, Chengzhi; Han, Fei; Lv, Tiezheng; Li, Xiaoshan; Wang, Shijie; Zhu, Rui; Liao, Haojie; Zhang, Shiguo

    2018-05-01

    Although several Si/C composite structures have been proposed for high-performance lithium-ion batteries (LIBs), they have still suffered from expensive and complex processes of nano-Si production. Herein, a simple, controllable oxygen inward diffusion was utilized to transform Si sludge obtained from the photovoltaic (PV) industry into the nano-Si/SiOx structure as a result of the high diffusion efficiency of O inside Si and high surface area of the sludge. After further process, a yolk/shell Si/C structure was obtained as an anode material for LIBs. This composite demonstrated an excellent cycling stability, with a high reversible capacity (˜ 1250 mAh/g for 500 cycles), by void space originally left by the SiOx accommodate inner Si expansion. We believe this is a rather simple way to convert the waste Si into a valuable nano-Si for LIB applications.

  3. Formation of metallic Si and SiC nanoparticles from SiO2 particles by plasma-induced cathodic discharge electrolysis in chloride melt

    International Nuclear Information System (INIS)

    Tokushige, M.; Tsujimura, H.; Nishikiori, T.; Ito, Y.

    2013-01-01

    Silicon nanoparticles are formed from SiO 2 particles by conducting plasma-induced cathodic discharge electrolysis. In a LiCl–KCl melt in which SiO 2 particles were suspended at 450 °C, we obtained Si nanoparticles with diameters around 20 nm. During the electrolysis period, SiO 2 particles are directly reduced by discharge electrons on the surface of the melt just under the discharge, and the deposited Si atom clusters form Si nanoparticles, which leave the surface of the original SiO 2 particle due to free spaces caused by a molar volume difference between SiO 2 and Si. We also found that SiC nanoparticles can be obtained using carbon anode. Based on Faraday's law, the current efficiency for the formation of Si nanoparticles is 70%

  4. SI konkurss / Anna Roomet

    Index Scriptorium Estoniae

    Roomet, Anna

    2006-01-01

    Konkursist, auhinnatseremooniast ja ekspositsioonist Arhitektuuri- ja Disainigaleriis, žürii koosseis. Intervjuu eesti parima noore disaineri preemia SÄSI pälvinud Pavel Sidorenko ning väikese SÄSI saanud Björn Koobi, Ülle Jehe ja Igor Volkoviga

  5. Intranasal delivery of antiviral siRNA.

    Science.gov (United States)

    Barik, Sailen

    2011-01-01

    Intranasal administration of synthetic siRNA is an effective modality of RNAi delivery for the prevention and therapy of respiratory diseases, including pulmonary infections. Vehicles used for nasal siRNA delivery include established as well as novel reagents, many of which have been recently optimized. In general, they all promote significant uptake of siRNA into the lower respiratory tract, including the lung. When properly designed and optimized, these siRNAs offer significant protection against respiratory viruses such as influenza virus, parainfluenza virus and respiratory syncytial virus (RSV). Nasally administered siRNA remains within the lung and does not access systemic blood flow, as judged by its absence in other major organs such as liver, heart, kidney, and skeletal muscle. Adverse immune reaction is generally not encountered, especially when immunogenic and/or off-target siRNA sequences and toxic vehicles are avoided. In fact, siRNA against RSV has entered Phase II clinical trials in human with promising results. Here, we provide a standardized procedure for using the nose as a specific route for siRNA delivery into the lung of laboratory animals. It should be clear that this simple and efficient system has enormous potential for therapeutics.

  6. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  7. Back-contacted BaSi

    NARCIS (Netherlands)

    Vismara, R.; Isabella, O.; Zeman, M.

    2017-01-01

    We present the optical investigation of a novel back-contacted architecture for solar cells based on a thin barium (di)silicide (BaSi2) absorber. First, through the analysis of absorption limits of different semiconducting materials, we show the potential of BaSi2 for

  8. Natural 32Si as environmental tracer

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2005-01-01

    There is a pressing need for an effective dating tool to cover the historical past. Cosmogenic 32 Si, with a half-life of ca. 140 years, is ideally suited to provide time information in the range 50-1000 years. Detection of 32 Si is, however, very difficult due to extremely low natural concentrations and isotopic ratios. (author). 2 refs

  9. SHS synthesis of Si-SiC composite powders using Mg and reactants from industrial waste

    Science.gov (United States)

    Chanadee, Tawat

    2017-11-01

    Si-SiC composite powders were synthesized by self-propagating high-temperature synthesis (SHS) using reactants of fly ash-based silica, sawdust-based activated carbon, and magnesium. Fly ash-based silica and sawdust-based activated carbon were prepared from coal mining fly ash and Para rubber-wood sawdust, respectively. The work investigated the effects of the synthesis atmosphere (air and Ar) on the phase and morphology of the SHS products. The SHS product was leached by a two-step acid leaching processes, to obtain the Si-SiC composite powder. The SHS product and SHS product after leaching were characterized by X-ray diffractometry, scanning electron microscopy and energy dispersive X-ray spectrometry. The results indicated that the SHS product synthesized in air consisted of Si, SiC, MgO, and intermediate phases (SiO2, Mg, Mg2SiO4, Mg2Si), whereas the SHS product synthesized in Ar consisted of Si, SiC, MgO and a little Mg2SiO4. The SiC content in the leached-SHS product was higher when Ar was used as the synthesis atmosphere. As well as affecting the purity, the synthesis atmospheres also affected the average crystalline sizes of the products. The crystalline size of the product synthesized in Ar was smaller than that of the product synthesized in air. All of the results showed that fly ash and sawdust could be effective waste-material reactants for the synthesis of Si-SiC composite powders.

  10. Low-temperature Au/a-Si wafer bonding

    International Nuclear Information System (INIS)

    Jing, Errong; Xiong, Bin; Wang, Yuelin

    2011-01-01

    The Si/SiO 2 /Ti/Au–Au/Ti/a-Si/SiO 2 /Si bonding structure, which can also be used for the bonding of non-silicon material, was investigated for the first time in this paper. The bond quality test showed that the bond yield, bond repeatability and average shear strength are higher for this bonding structure. The interfacial microstructure analysis indicated that the Au-induced crystallization of the amorphous silicon process leads to big Si grains extending across the bond interface and Au filling the other regions of the bond interface, which result into a strong and void-free bond interface. In addition, the Au-induced crystallization reaction leads to a change in the IR images of the bond interface. Therefore, the IR microscope can be used to evaluate and compare the different bond strengths qualitatively. Furthermore, in order to verify the superiority of the bonding structure, the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si (i.e. no Ti/Au layer on the a-Si surface) and Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structures (i.e. Au thermocompression bonding) were also investigated. For the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si bonding structure, the poor bond quality is due to the native oxide layer on the a-Si surface, and for the Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structure, the poor bond quality is caused by the wafer surface roughness which prevents intimate contact and limits the interdiffusion at the bond interface.

  11. De la dédiasporisation des jeunes Haïtiens à New-York On De-diasporization of Second-generation Haitians in New York City

    Directory of Open Access Journals (Sweden)

    Stéphanie Melyon-Reinette

    2012-05-01

    Full Text Available Les facteurs répulsifs de l’émigration haïtienne ont complètement changé depuis les années 1950 qui marquèrent le début de ce mouvement avec le régime duvaliériste. Les entités géopolitiques et sociopolitiques qui en résultent évoluent, elles aussi, proportionnellement et rationnellement aux motivations des individus en partance. Ainsi, les exilés forcés rêvaient de retrouver leur chère Haïti, les nouveaux primo-arrivants sont des individus qui cherchent à se ré-enraciner dans un terreau aux airs d’ailleurs. Le diasporique est-il un individu dont l’identité est figée ? Dans cet article, une étude statistique simple cherche à démontrer l’évolution des mentalités des jeunes Haïtiens à travers un questionnement des identités et des orientations culturelles. Des dynamiques se font jour montrant que la diaspora est fluctuante comme les identités et les cultures qui la composent.The Push factors of Haitian emigration have completely changed since the late 1950s which marked the beginning of this movement with the Duvalier regime. The geopolitical and sociopolitical entities which result from it are changing as well, in proportion and accordance with the motivations of the people who leave. Thus, the forced exiles dreamt of going back to their dearest Haiti, the latest newly-arrived immigrants are individuals who desire to re-root into a land that sounds like “elsewhere”. Must the diasporic individual’s identity be stable? In this article, a simple survey seeks to shed light on the changing mentalities of young Haitians, examining their identities and cultural choices.  Emerging trends show that diaspora is a flow, not unlike the identities and the cultures of which it is composed.

  12. Geology, mineralization, and fluid inclusion characteristics of the Kashkasu W-Mo-Cu skarn deposit associated with a high-potassic to shoshonitic igneous suite in Kyrgyzstan, Tien Shan: Toward a diversity of W mineralization in Central Asia

    Science.gov (United States)

    Soloviev, Serguei G.; Kryazhev, Sergey G.

    2018-03-01

    The Kashkasu deposit is part of the subduction-related Late Paleozoic (Late Carboniferous) metallogenic belt of Tien Shan. It is associated with a multiphase monzodiorite-monzonite-granodiorite-granite pluton of the magnetite-series high-K calc-alkaline to shoshonitic igneous suite. The deposit contains zones of W-Mo-Cu oxidized prograde and retrograde skarns, with abundant andraditic garnet, magnetite, locally scapolite and K-feldspar, as well as scheelite, chalcopyrite, and molybdenite. Skarns are overprinted by quartz-carbonate-sericite (phyllic alteration) zones with scheelite and sulfides. Prograde calcic skarn and initial retrograde skarns were formed from a high temperature (650 °C to 450-550 °C), high pressure (2000 bars to 600-900 bars) magmatic-hydrothermal low- to high-salinity aqueous chloride fluid. The gradual fluid evolution was interrupted by the intrusion of granodiorite and likely associated release of low-salinity (∼7-8 wt% NaCl equiv.) fluid. Ascent of this fluid to shallower levels and/or its cooling to 400-500 °C has resulted in phase separation into low-salinity (2.1-3.1 wt% NaCl equiv.) vapor and coexisting brine (35-40 wt% NaCl equiv.). The boiling was coincident with most intense scheelite deposition in retrograde skarn. Later retrograde skarn assemblages were formed from a gaseous, low- to moderate-salinity (3.4-8.1 wt% NaCl equiv.) fluid and then from high salinity (37-42 wt% NaCl equiv.) aqueous chloride fluids, the latter being enriched in Ca (17-20 wt% CaCl2) that could also affect scheelite deposition. Another cycle of fluid exsolution from crystallizing magma corresponded to quartz-carbonate-sericite-scheelite-sulfide (phyllic) alteration stage, with the early low-salinity (5.3-8.4 wt% NaCl-equiv.) fluid followed by later high-salinity (33.5-38.2 wt% NaCl-equiv.) fluid. The sulfur isotope data (δ34S = +5.1 to +9.0) suggest significant sulfur sourcing from sedimentary rocks enriched in seawater sulfate, possibly evaporites.

  13. Anticipating Central Asian Water Stress: Variation in River Flow Dependency on Melt Waters from Alpine to Plains in the Remote Tien Shan Range, Kyrgyzstan Using a Rapid Hydro Assessment Methodology

    Science.gov (United States)

    Hill, A. F.; Wilson, A. M.; Williams, M. W.

    2016-12-01

    The future of mountain water resources in High Asia is of high interest to water managers, development organizations and policy makers given large populations downstream reliant on snow and ice sourced river flow. Together with historical and cultural divides among ex-Soviet republics, a lack of central water management following the Soviet break-up has led to water stress as trans-boundary waters weave through and along borders. New upstream hydropower development, a thirsty downstream agricultural sector and a shrinking Aral Sea has led to increasing tension in the region. Despite these pressures and in contrast to eastern High Asia's Himalayan basins (Ganges, Brahmaputra), little attention has been given to western High Asia draining the Pamir and Tien Shan ranges (Syr Darya and Amu Darya basins) to better understand the hydrology of this vast and remote area. Difficult access and challenging terrain exacerbate challenges to working in this remote mountain region. As part of the Contributions to High Asia Runoff from Ice and Snow (CHARIS) project, we asked how does river flow source water composition change over an alpine-to-plains domain of Kyrgyzstan's Naryn River in the Syr Darya basin? In addition, what may the future hold for river flow in Central Asia given the differing responses of snow and ice to climate changes? Utilizing a Rapid Hydrologic Assessment methodology including a suite of pre-field mapping techniques we collected in situ water chemistry data at targeted, remote mountain sites over 450km of the Naryn River over an elevation gradient from glacial headwaters to the lower lying areas - places where people, hydropower and agriculture utilize water. Chemical and isotope tracers were used to separate stream flow to understand relative dependency on melt waters as the river moves downstream from glaciers and snow covered areas. This case study demonstrates a technique to acquire field data over large scales in remote regions that facilitates

  14. El fin de la situación de transitoriedad: la Ley Orgánica 15/1999, de 13 de diciembre, de Protección de Datos de Carácter Personal ya tiene desarrollo reglamentario

    Directory of Open Access Journals (Sweden)

    Mònica Vilasau

    2008-09-01

    Full Text Available El 19 de abril del 2008 entró en vigor el Reglamento 1720/2007, de 21 de diciembre, que desarrolla la Ley Orgánica de Protección de Datos (LOPD. Este texto había sido muy esperado por los aplicadores del derecho, por las empresas de consultoría y de seguridad, por sectores del marketing y publicidad, por empresas dedicadas a la solvencia patrimonial y crédito y, en un grado menor, por los consumidores y usuarios. La norma responde a la necesidad de dotar la Ley Orgánica sobre la materia del correspondiente desarrollo reglamentario y dar respuesta a las nuevas necesidades de la sociedad de la información constantemente en evolución. En el Reglamento de la LOPD se regula el otorgamiento del consentimiento por silencio positivo, el otorgamiento del consentimiento de los menores, se sistematiza el ejercicio de los derechos por parte del afectado, se regulan detalladamente los ficheros de marketing y publicidad, los de solvencia patrimonial y crédito, se dota la figura del encargado de un estatuto jurídico, se proporciona un nuevo marco a las medidas de seguridad y se sistematizan los procedimientos tramitados por la Agencia Española de Protección de Datos. El texto aprobado, evidentemente, no complacerá a todo el mundo, la existencia de múltiples instancias involucradas (estatales y autonómicas y de múltiples agentes con diferentes perspectivas hace que las soluciones proporcionadas no se ajusten a los ideales de todos los implicados.Sin embargo, el nuevo reglamento es un paso adelante en la consolidación del derecho a la protección de datos de carácter personal, aporta mayor seguridad jurídica y flexibilización y se tiene que ver como una oportunidad de crear una nueva cultura de protección de datos integrada en el tratamiento de la información de una forma global.

  15. Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

    Energy Technology Data Exchange (ETDEWEB)

    Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

    2011-11-01

    A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

  16. Centrifugally cast Zn-27Al-xMg-ySi alloys and their in situ (Mg2Si + Si)/ZA27 composites

    International Nuclear Information System (INIS)

    Wang Qudong; Chen Yongjun; Chen Wenzhou; Wei Yinhong; Zhai Chunquan; Ding Wenjiang

    2005-01-01

    Effects of composition, mold temperature, rotating rate and modification on microstructure of centrifugally cast Zn-27Al-xMg-ySi alloys have been investigated. In situ composites of Zn-27Al-6.3Mg-3.7Si and Zn-27Al-9.8Mg-5.2Si alloys were fabricated by centrifugal casting using heated permanent mold. These composites consist of three layers: inner layer segregates lots of blocky primary Mg 2 Si and a litter blocky primary Si, middle layer contains without primary Mg 2 Si and primary Si, outer layer contains primary Mg 2 Si and primary Si. The position, quantity and distribution of primary Mg 2 Si and primary Si in the composites are determined jointly by alloy composition, solidification velocity under the effect of centrifugal force and their floating velocity inward. Na salt modifier can refine grain and primary Mg 2 Si and make primary Mg 2 Si distribute more evenly and make primary Si nodular. For centrifugally cast Zn-27Al-3.2Mg-1.8Si alloy, the microstructures of inner layer, middle layer and outer layer are almost similar, single layer materials without primary Mg 2 Si and primary Si are obtained, and their grain sizes increased with the mold temperature increasing

  17. Diffusion in ordered Fe-Si alloys

    International Nuclear Information System (INIS)

    Sepiol, B.; Vogl, G.

    1995-01-01

    The measurement of the diffusional Moessbauer line broadening in single crystalline samples at high temperatures provides microscopic information about atomic jumps. We can separate jumps of iron atoms between the various sublattices of Fe-Si intermetallic alloys (D0 3 structure) and measure their frequencies. The diffusion of iron in Fe-Si samples with Fe concentrations between 75 and 82 at% shows a drastic composition dependence: the jump frequency and the proportion between jumps on Fe sublattices and into antistructure (Si) sublattice positions change greatly. Close to Fe 3 Si stoichiometry iron diffusion is extremely fast and jumps are performed exclusively between the three Fe sublattices. The change in the diffusion process when changing the alloy composition from stoichiometric Fe 3 Si to the iron-rich side is discussed. (orig.)

  18. DLC-Si protective coatings for polycarbonates

    Directory of Open Access Journals (Sweden)

    Damasceno J.C.

    2003-01-01

    Full Text Available In this work, a-C:H:Si (DLC-Si films were produced onto crystalline silicon and polycarbonate substrates by the rf-PACVD technique from gaseous mixtures of CH4 + SiH4 and C2H2 + SiH4. The effects of self-bias and gas composition upon mechanical and optical properties of the films were investigated. Micro-hardness, residual stress, surface roughness and refractive index measurements were employed for characterization. By incorporating low concentrations of silicon and by exploring the more favorable conditions for the rf-PACVD deposition technique, highly adherent DLC-Si thin films were produced with reduced internal stresses (lower than 1 GPa, high hardness (around 20 GPa and high deposition rates (up to 10 µm/h. Results that show the technological viability of this material for application as protective coatings for polycarbonates are also discussed.

  19. SiC for microwave power transistors

    Energy Technology Data Exchange (ETDEWEB)

    Sriram, S.; Siergiej, R.R.; Clarke, R.C.; Agarwal, A.K.; Brandt, C.D. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States)

    1997-07-16

    The advantages of SiC for high power, microwave devices are discussed. The design considerations, fabrication, and experimental results are described for SiC MESFETs and SITs. The highest reported f{sub max} for a 0.5 {mu}m MESFET using semi-insulating 4H-SiC is 42 GHz. These devices also showed a small signal gain of 5.1 dB at 20 GHz. Other 4H-SiC MESFETs have shown a power density of 3.3 W/mm at 850 MHz. The largest SiC power transistor reported is a 450 W SIT measured at 600 MHz. The power output density of this SIT is 2.5 times higher than that of comparable silicon devices. SITs have been designed to operate as high as 3.0 GHz, with a 3 cm periphery part delivering 38 W of output power. (orig.) 28 refs.

  20. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  1. Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

    DEFF Research Database (Denmark)

    Pankratov, V.; Osinniy, Viktor; Kotlov, A.

    2011-01-01

    done. It is demonstrated that the experimentally determined blueshift of the photoluminescence excitation and absorption spectra is larger than the theoretical predictions. The influence of point defects in the SiO2 matrix on the optical and luminescence properties of the embedded Si nanocrystals...... is discussed. Moreover, it is demonstrated that no energy transfer takes place between the SiO2 and Si nanocrystals when the excitation energy is higher than the band-to-band transition energy in SiO2....

  2. Luminescence of solar cells with a-Si:H/c-Si heterojunctions

    Science.gov (United States)

    Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

    2017-05-01

    We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

  3. Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

    Science.gov (United States)

    Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

    2002-06-01

    Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

  4. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  5. First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

    Science.gov (United States)

    Nagura, Takuya; Kawachi, Shingo; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Kageshima, Hiroyuki; Endoh, Tetsuo; Shiraishi, Kenji

    2018-04-01

    It is expected that the off-state leakage current of MOSFETs can be reduced by employing vertical body channel MOSFETs (V-MOSFETs). However, in fabricating these devices, the structure of the Si pillars sometimes cannot be maintained during oxidation, since Si atoms sometimes disappear from the Si/oxide interface (Si missing). Thus, in this study, we used first-principles calculations based on the density functional theory, and investigated the Si emission behavior at the various interfaces on the basis of the Si emission model including its atomistic structure and dependence on Si crystal orientation. The results show that the order in which Si atoms are more likely to be emitted during thermal oxidation is (111) > (110) > (310) > (100). Moreover, the emission of Si atoms is enhanced as the compressive strain increases. Therefore, the emission of Si atoms occurs more easily in V-MOSFETs than in planar MOSFETs. To reduce Si missing in V-MOSFETs, oxidation processes that induce less strain, such as wet or pyrogenic oxidation, are necessary.

  6. EFFECT OF THE Si POWDER ADDITIONS ON THE PROPERTIES OF SiC COMPOSITES

    Directory of Open Access Journals (Sweden)

    GUOGANG XU

    2012-09-01

    Full Text Available By means of transient plastic phase process, the SiC silicon carbide kiln furniture materials were produced through adding Si powder to SiC materials. At the condition of the same additions of SiO2 powder, the effect of the Si powder additions on properties of silicon carbide materials after sintered at 1450°C for 3 h in air atmosphere was studied by means of SEM and other analysis methods. The results showed that silicon powder contributes to both sintering by liquid state and plastic phase combination to improve the strength of samples. When the Si powder additions is lower than 3.5 %, the density and strength of samples increase and porosity decrease with increasing Si powder additions. However when the Si powder additions is higher than 3.5 %, the density and strength of samples decrease and porosity increase with increasing Si powder additions. With increasing of Si additions, the residual strength of sample after thermal shocked increased and linear change rate decreased, and get to boundary value when Si additions is 4.5 %. The results also indicated that at the same sintering temperature, the sample with 3.5 % silicon powder has maximum strength.

  7. Uniform Si nano-dot fabrication using reconstructed structure of Si(110)

    Science.gov (United States)

    Yano, Masahiro; Uozumi, Yuki; Yasuda, Satoshi; Asaoka, Hidehito

    2018-06-01

    Si nano-dot (ND) formation on Si(110) is observed by means of a scanning tunneling microscope (STM). The initial Si-NDs are Si crystals that are continuous from the substrate and grow during the oxide layer desorption. The NDs fabricated on the flat surface of Si(110)-1 × 1 are surrounded by four types of facets with almost identical appearance probabilities. An increase in the size of the NDs increases the variety of its morphology. In contrast, most Si-NDs fabricated on straight-stepped surface of Si(110)-16 × 2 reconstructed structure are surrounded by only a single type of facet, namely the \\text{Si}(17,15,1)-2 × 1 plane. An appearance probability of the facet in which the base line is along the step of Si(110)-16 × 2 exceeds 75%. This finding provides a fabrication technique of uniformed structural Si-NDs by using the reconstructed structure of Si(110).

  8. Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

    Directory of Open Access Journals (Sweden)

    ZHANG Hai-yuan

    2017-05-01

    Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

  9. Neutron tolerance of advanced SiC-fiber/CVI-SiC composites

    International Nuclear Information System (INIS)

    Katoh, Y.; Kohyama, A.; Snead, L.L.; Hinoki, T.; Hasegawa, A.

    2003-01-01

    Fusion blankets employing a silicon carbide (SiC) fiber-reinforced SiC matrix composite (SiC/SiC composite) as the structural material provide attractive features represented by high cycle efficiency and extremely low induced radioactivity. Recent advancement in processing and utilization techniques and application studies in ceramic gas turbine and advanced transportation systems, SiC/SiC composites are steadily getting matured as industrial materials. Reference SiC/SiC composites for fusion structural applications have been produced by a forced-flow chemical vapor infiltration (FCVI) method using conventional and advanced near-stoichiometric SiC fibers and extensively evaluated primarily in Japan-US collaborative JUPITER program. In this work, effect of neutron irradiation at elevated temperatures on mechanical property of these composites is characterized. Unlike in conventional SiC/SiC composites, practically no property degradation was identified in advanced composites with a thin carbon interphase by a neutron fluence level of approximately 8dpa at 800C. (author)

  10. Time-resolved photoluminescence of SiOx encapsulated Si

    Science.gov (United States)

    Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

    Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

  11. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  12. Investigation on fabrication of SiC/SiC composite as a candidate material for fuel sub-assembly

    International Nuclear Information System (INIS)

    Lee, Jae-Kwang; Naganuma, Masayuki; Park, Joon-Soo; Kohyama, Akira

    2005-01-01

    The possibility of SiC/SiC (Silicon carbide fiber reinforced Silicon carbide) composites application for fuel sub-assembly of Fast Breeder Reactor was investigated. To select a raw material of SiC/SiC composites, a few kinds of SiC nano powder was estimated by SEM observation and XRD analysis. Furthermore, SiC monolithic was sintered from them and estimated by flexural test. SiC nano-powder which showed good sinterability, it was used for fabrication of SiC/SiC composites by Hot Pressing method. From the sintering condition of 1800, 1820degC temperature and 15, 20 MPa pressure, SiC/SiC composite was fabricated and then estimated by tensile test. SiC/SiC composite, which made by 1820degC and 20 MPa condition, showed the highest mechanical strength by the monotonic tensile test. SiC/SiC composite, which made by 1800degC and 15 MPa condition, showed a stable fracture behavior at the monotonic and cyclic tensile test. And then, the hoop stress of ideal model of SiC/SiC composites was discussed. It was confirmed that applicability of SiC/SiC composites by Hot Pressing method for fuel sub-assembly structural material. To make it real attractive one, to maintain the reliability and safety as a high temperature structural material, the design and process study on SiC/Sic composites material will be continued. (author)

  13. Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

    International Nuclear Information System (INIS)

    Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.

    2003-01-01

    Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen

  14. Thickness dependent formation and properties of GdSi2/Si(100) interfaces

    International Nuclear Information System (INIS)

    Peto, G.; Molnar, G.; Dozsa, L.; Horvath, Z.E.; Horvath, Zs.J.; Zsoldos, E.; Dimitriadis, C.A.; Papadimitriou, L.

    2005-01-01

    Epitaxial and polycrystalline orthorhombic GdSi 2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film. The most important property of these GdSi 2 /Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance-voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 10 10 cm -2 ), while the non-epitaxial growth induced defects of a much higher density (about 10 12 cm -2 ). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi 2 /Si interface. (orig.)

  15. Structural and electrical evaluation for strained Si/SiGe on insulator

    International Nuclear Information System (INIS)

    Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

    2006-01-01

    Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed

  16. Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

    Science.gov (United States)

    Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

    2017-04-01

    Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

  17. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  18. Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

    Science.gov (United States)

    Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

    2018-04-01

    Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

  19. Light emissions from LiNbO sub 3 /SiO sub 2 /Si structures

    CERN Document Server

    Wu, X L; Tang, N; Deng, S S; Bao, X M

    2003-01-01

    LiNbO sub 3 (LN) films with a high degree of (006) texture were deposited on Si-based dense SiO sub 2 layers by pulsed laser deposition. After annealing, the LN/SiO sub 2 /Si structures were revealed to have ultraviolet-, green-, and red-emitting properties related to self-trapped excitons and E' defect pairs in the SiO sub 2 surface, which are induced by the photorefractive effect of the LN films. The emission wavelength can be tuned by introducing different dopants into the LN films. Waveguiding properties of the structures were demonstrated. The results obtained indicate that the LN/SiO sub 2 /Si structures could be expected to have important applications in modern optoelectronic integration. (letter to the editor)

  20. Solid-state 27Al and 29Si NMR investigations on Si-substituted hydrogarnets

    International Nuclear Information System (INIS)

    Rivas Mercury, J.M.; Pena, P.; Aza, A.H. de; Turrillas, X.; Sobrados, I.; Sanz, J.

    2007-01-01

    Partially deuterated Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x hydrates prepared by a reaction in the presence of D 2 O of synthetic tricalcium aluminate with different amounts of amorphous silica were characterized by 29 Si and 27 Al magic-angle spinning nuclear magnetic resonance (NMR) spectroscopy. The 29 Si NMR spectroscopy was used for quantifying the non-reacted silica and the resulting hydrated products. The incorporation of Si into Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x was followed by 27 Al NMR spectroscopy: Si:OH ratios were determined quantitatively from octahedral Al signals ascribed to Al(OH) 6 and Al(OSi)(OH) 5 environments. The NMR data obtained were consistent with the concentrations of the Al and Si species deduced from transmission electron microscopy energy-dispersive spectrometry and Rietveld analysis of both X-ray and neutron diffraction data

  1. Isotopic effects in sub-barrier fusion of Si + Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Bourgin, D.; Čolović, P.; Corradi, L.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Grebosz, J.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Szilner, S.; Urbani, M.; Zhang, G. L.

    2018-04-01

    Background: Recent measurements of fusion cross sections for the 28Si+28Si system revealed a rather unsystematic behavior; i.e., they drop faster near the barrier than at lower energies. This was tentatively attributed to the large oblate deformation of 28Si because coupled-channels (CC) calculations largely underestimate the 28Si+28Si cross sections at low energies, unless a weak imaginary potential is applied, probably simulating the deformation. 30Si has no permanent deformation and its low-energy excitations are of a vibrational nature. Previous measurements of this system reached only 4 mb, which is not sufficient to obtain information on effects that should show up at lower energies. Purpose: The aim of the present experiment was twofold: (i) to clarify the underlying fusion dynamics by measuring the symmetric case 30Si+30Si in an energy range from around the Coulomb barrier to deep sub-barrier energies, and (ii) to compare the results with the behavior of 28Si+28Si involving two deformed nuclei. Methods: 30Si beams from the XTU tandem accelerator of the Laboratori Nazionali di Legnaro of the Istituto Nazionale di Fisica Nucleare were used, bombarding thin metallic 30Si targets (50 μ g /cm2) enriched to 99.64 % in mass 30. An electrostatic beam deflector allowed the detection of fusion evaporation residues (ERs) at very forward angles, and angular distributions of ERs were measured. Results: The excitation function of 30Si+30Si was measured down to the level of a few microbarns. It has a regular shape, at variance with the unusual trend of 28Si+28Si . The extracted logarithmic derivative does not reach the LCS limit at low energies, so that no maximum of the S factor shows up. CC calculations were performed including the low-lying 2+ and 3- excitations. Conclusions: Using a Woods-Saxon potential the experimental cross sections at low energies are overpredicted, and this is a clear sign of hindrance, while the calculations performed with a M3Y + repulsion

  2. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

    Science.gov (United States)

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

    2013-05-01

    We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

  3. Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

    2014-02-28

    We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

  4. Experimental and thermodynamic assessments of substitutions in the AlFeSi, FeMnSi, FeSiZr and AlCaFeSi systems (65 wt % Si) - solidification simulation

    International Nuclear Information System (INIS)

    Gueneau, C.; Ansara, I.

    1994-01-01

    The substitutions of Al Si, Fe Mn and Fe Zr in some intermetallic compounds of the Al-Fe-Si, Fe-Mn-Si and Fe-Si-Zr systems are modelled in the Si-rich corner using a two sublattice model. The solidification paths of the studied alloys are determined at equilibrium. The ascalculated phase volume fractions of the alloys are compared to the experimental ones. Finally, a solidification simulation using the Gulliver-Scheil's model is performed in order to explain the formation of some precipitates experimentally observed. (authors). 14 figs., 19 refs

  5. Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

    Science.gov (United States)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-11-01

    Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

  6. Study for obtaining a suppressor device of transients using the Al/SRO/Si structure; Estudio para la obtencion de un dispositivo supresor de transitorios utilizando la estructura Al/SRO/Si

    Energy Technology Data Exchange (ETDEWEB)

    Marin Ramos, Heriberto

    1999-06-01

    transitorios de voltaje. En este trabajo se presenta la estructura Aluminio/Oxido rico en Silicio/Silicio como otra opcion en el campo de los dispositivos supresores de transitorios. Algunos dispositivos utilizados en la supresion de transitorios de voltaje son: varistores de oxido de zinc, varistores de carburo de silicio, celdas de selenio, diodos zener, etcetera. La estructura AI/SRO/Si presenta propiedades conductoras debido a la presencia de exceso de silicio en la pelicula de SRO. Variando la razon de gases reaccionantes (Ro=N{sub 2}O/SiH{sub 4}) durante el crecimiento de la pelicula de Oxido Rico en Silicio (SRO, por sus siglas en ingles), se puede variar la conductividad del material. El SRO resulta de mucha importancia para el dispositivo supresor de transitorios que se pretende obtener en el presente trabajo debido a su comportamiento no-ohmico. El dispositivo AI/SRO/Si se comporta de varias maneras dependiendo de las caracteristicas del SRO y del sustrato de silicio. Se ha encontrado que uno de estos comportamientos es como un supresor de transitorios de voltaje. Verificando su comportamiento como supresor de transitorios, se estudiaron los efectos del espesor de la pelicula, del area y del exceso de silicio del dispositivo, para lo cual se obtuvo la caracteristica I-V, y la obtencion de algunos parametros en c.d. En el presente trabajo el SRO se obtuvo mediante LPCVD (Low Pressure Chemical Vapor Deposition), inicialmente se realizo una caracterizacion C-V para obtener parametros indicativos del exceso de silicio, tales como: permitividad de la pelicula de SRO. Tambien se obtuvo el indice de refraccion, el cual es un parametro indicativo de la presencia de exceso de silicio. Una vez teniendo la certeza de la presencia de exceso de silicio se procedio a obtener la caracteristica I-V de la estructura AI/SRO/Si como dispositivo. Se analizo el comportamiento de la estructura AI/SRO/Si con diferentes parametros, tales como: Ro, espesor de SOR, areas.

  7. Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

    International Nuclear Information System (INIS)

    Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

    2003-01-01

    Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

  8. Si Wire-Array Solar Cells

    Science.gov (United States)

    Boettcher, Shannon

    2010-03-01

    Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

  9. Joining SiC/SiC composites for fusion applications

    International Nuclear Information System (INIS)

    Henager, C.J.

    2007-01-01

    Full text of publication follows: The use of SiC-reinforced composites for fusion reactors or other nuclear applications will likely require some form of joining in order to form large structural or functional sections. Joints must be able to allow load transfer to the composite material so that the fiber reinforcements are able to carry their designed loads and the joint should not fail in a brittle manner. In addition, joints must be tolerant of radiation damage similar to the composite material to maintain the structural integrity of the joined section. Other requirements of interest are low activation joints and ease of joining application and processing, which are a difficult set of criteria to meet. Research at PNNL has been directed at high-strength joints using solid-state displacement reactions and pre-ceramic polymer joints that are easy to apply and that could be used in field repair situations. This research will report on the further development and testing of such joints using a double notch shear (DNS) specimen that is suitable for in-reactor testing. The results reveal that the solid-state joints are stronger than the polymer-based joints but require high-temperature, high-pressure processing. The polymer-based joints can be applied with reduced pressure and temperature processing compared to the solid-state joints. The polymer-based joints may have adequate strength for some applications where ease of application and in situ processing are required. Although irradiation testing is not reported in this study the use of the DNS specimen is discussed with regard to future neutron irradiations. (authors)

  10. Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture

    Energy Technology Data Exchange (ETDEWEB)

    Imamura, Kentaro; Nonaka, Takaaki; Onitsuka, Yuya; Irishika, Daichi; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • Ultralow reflectivity Si wafers with light trapping effect can be obtained by forming a nanocrystalline Si layer on pyramidal textured Si surfaces. • Surface passivation using phosphosilicate glass improved minority carrier lifetime of the nanocrystalline Si layer/Si structure. • A high photocurrent density of 40.1 mA/cm{sup 2}, and a high conversion efficiency of 18.5% were achieved. - Abstract: The surface structure chemical transfer (SSCT) method has been applied to fabrication of single crystalline Si solar cells with 170 μm thickness. The SSCT method, which simply involves immersion of Si wafers in H{sub 2}O{sub 2} plus HF solutions and contact of Pt catalyst with Si taking only ∼30 s for 6 in. wafers, can decrease the reflectivity to less than 3% by the formation of a nanocrystalline Si layer. However, the reflectivity of the nanocrystalline Si layer/flat Si surface/rear Ag electrode structure in the wavelength region longer than 1000 nm is high because of insufficient absorption of incident light. The reflectivity in the long wavelength region is greatly decreased by the formation of the nanocrystalline Si layer on pyramidal textured Si surfaces due to an increase in the optical path length. Deposition of phosphosilicate glass (PSG) on the nanocrystalline Si layer for formation of pn-junction does not change the ultralow reflectivity because the surface region of the nanocrystalline Si layer possesses a refractive index of 1.4 which is nearly the same as that of PSG of 1.4–1.5. The PSG layer is found to passivate the nanocrystalline Si layer, which is evident from an increase in the minority carrier lifetime from 12 to 44 μs. Hydrogen treatment at 450 °C further increases the minority carrier lifetime approximately to a doubled value. The solar cells with the Si layer/pyramidal Si substrate/boron-diffused back surface field/Ag rear electrode> structure show a high conversion efficiency of 18

  11. Microstructural optimization of high temperature SiC/SiC composites by nite process

    International Nuclear Information System (INIS)

    Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  12. Microstructural optimization of high temperature SiC/SiC composites by nite process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

    2007-07-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  13. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

    Science.gov (United States)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-02-07

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  14. Characterization of SiCf/SiC and CNT/SiC composite materials produced by liquid phase sintering

    International Nuclear Information System (INIS)

    Lee, J.K.; Lee, S.P.; Cho, K.S.; Byun, J.H.; Bae, D.S.

    2011-01-01

    This paper dealt with the microstructure and mechanical properties of SiC based composites reinforced with different reinforcing materials. The composites were fabricated using reinforcing materials of carbon nanotubes (CNT) and Tyranno Lox-M SiC chopped fibers. The volume fraction of carbon nanotubes was also varied in this composite system. An Al 2 O 3 -Y 2 O 3 powder mixture was used as a sintering additive in the consolidation of the SiC matrix. The characterization of the composites was investigated by means of SEM and three point bending tests. These composites showed a dense morphology of the matrix region, by the creation of a secondary phase. The composites reinforced with SiC chopped fibers possessed a flexural strength of about 400 MPa at room temperature. The flexural strength of the carbon nanotubes composites had a tendency to decrease with increased volume fraction of the reinforcing material.

  15. SiC-SiC and C-SiC Honeycomb for Advanced Flight Structures, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed project builds upon the work done in Phase I with the development of a C-SiC CMC honeycomb material that was successfully tested for mechanical...

  16. Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

    Energy Technology Data Exchange (ETDEWEB)

    Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

    2011-03-15

    The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Control of the graphene growth rate on capped SiC surface under strong Si confinement

    International Nuclear Information System (INIS)

    Çelebi, C.; Yanık, C.; Demirkol, A.G.; Kaya, İsmet İ.

    2013-01-01

    Highlights: ► Graphene is grown on capped SiC surface with well defined cavity size. ► Graphene growth rate linearly increases with the cavity height. ► Graphene uniformity is reduced with thickness. - Abstract: The effect of the degree of Si confinement on the thickness and morphology of UHV grown epitaxial graphene on (0 0 0 −1) SiC is investigated by using atomic force microscopy and Raman spectroscopy measurements. Prior to the graphene growth process, the C-face surface of a SiC substrate is capped by another SiC comprising three cavities on its Si-rich surface with depths varying from 0.5 to 2 microns. The Si atoms, thermally decomposed from the sample surface during high temperature annealing of the SiC cap /SiC sample stack, are separately trapped inside these individual cavities at the sample/cap interface. Our analyses show that the growth rate linearly increases with the cavity height. It was also found that stronger Si confinement yields more uniform graphene layers.

  18. The Degradation Behavior of SiCf/SiO2 Composites in High-Temperature Environment

    Science.gov (United States)

    Yang, Xiang; Cao, Feng; Qing, Wang; Peng, Zhi-hang; Wang, Yi

    2018-04-01

    SiCf/SiO2 composites had been fabricated efficiently by Sol-Gel method. The oxidation behavior, thermal shock property and ablation behavior of SiCf/SiO2 composites was investigated. SiCf/SiO2 composites showed higher oxidation resistance in oxidation atmosphere, the flexural strength retention ratio was larger than 90.00%. After 1300 °C thermal shock, the mass retention ratio was 97.00%, and the flexural strength retention ratio was 92.60%, while after 1500 °C thermal shock, the mass retention ratio was 95.37%, and the flexural strength retention ratio was 83.34%. After 15 s ablation, the mass loss rate was 0.049 g/s and recession loss rate was 0.067 mm/s. The SiO2 matrix was melted in priority and becomes loosen and porous. With the ablation going on, the oxides were washed away by the shearing action of the oxyacetylene flame. The evaporation of SiO2 took away large amount of heat, which is also beneficial to the protection for SiCf/SiO2 composites.

  19. Studies on Kondo insulating FeSi

    International Nuclear Information System (INIS)

    Bharathi, A.; Mani, Awadhesh; Ravindran, Nithya; Mathi Jaya, S.; Sundar, C.S.; Hariharan, Y.

    2000-01-01

    Temperature dependent electrical resistivity measurements have been carried out in Fe (1-x) Ru x Si and FeSi (1-x) Ge x to examine the robustness of the Kondo Insulating gap to substitution in the Fe and Si sublattices. The gap is seen to decrease with Ge substitution, while for Ru substitution the gap shows an initial decrease followed by an increase at higher concentration. The results can be understood in terms of the shift in the mobility edge due to disorder and/or pressure effects in combination with changes in band structure

  20. Properties of tribology for Si implanted PET

    International Nuclear Information System (INIS)

    Wu Yuguang; Zhang Tonghe; Zhang Xu; Liu Andong; Xie Mengxia; Zhang Aimin; Chen Jianmin

    2002-01-01

    Polyethylene terephthalate (PET) has been modified with Si ions from a metal vapor arc source (MEVVA). After implantation, the surface structure has been greatly changed. The experimental results of infrared absorption indicated that the particles are referred to rich carbon and SiC particles. The PET has been strengthened by these dispersed particles. The measurement results using nanometer hardness tester reveal that both surface hardness and modulus increase obviously. Therefore the surface wear resistance improved extremely. Finally the modification mechanism of Si implanted PET was discussed

  1. Implantation of P ions in SiO{sub 2} layers with embedded Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G.A. E-mail: kachurin@isp.nsc.ru; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I

    2004-08-01

    The effect of 10{sup 13}-10{sup 16} cm{sup -2} P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO{sub 2} layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10{sup 14} cm{sup -2}, thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs.

  2. Implantation of P ions in SiO2 layers with embedded Si nanocrystals

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.

    2004-01-01

    The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs

  3. Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

    International Nuclear Information System (INIS)

    Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

    2008-01-01

    We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

  4. Si cycling in a forest biogeosystem - the importance of transient state biogenic Si pools

    Science.gov (United States)

    Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Meier, K.; Puppe, D.; Wanner, M.; Kaczorek, D.

    2013-07-01

    The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to DSi (Gerard et al., 2008). However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%). Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007-04/2011), we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (version ZALF), (ii) related Si budgets, and (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. The comparatively high DSi concentrations (6 mg L-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

  5. Si cycling in a forest biogeosystem – the importance of transient state biogenic Si pools

    Directory of Open Access Journals (Sweden)

    M. Sommer

    2013-07-01

    Full Text Available The relevance of biological Si cycling for dissolved silica (DSi export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi might contribute > 50% to DSi (Gerard et al., 2008. However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%. Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007–04/2011, we quantified (i internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr by BIOME-BGC (version ZALF, (ii related Si budgets, and (iii Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae. We quantified an average Si plant uptake of 35 kg Si ha−1 yr−1 – most of which is recycled to the soil by litterfall – and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha−1. The comparatively high DSi concentrations (6 mg L−1 and DSi exports (12 kg Si ha−1 yr−1 could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

  6. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo

    2018-02-28

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

  7. Chemical vapor deposition of Si/SiC nano-multilayer thin films

    International Nuclear Information System (INIS)

    Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

    2015-01-01

    Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

  8. Alpha-particle irradiation induced defects in SiO2 films of Si-SiO2 structures

    International Nuclear Information System (INIS)

    Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.

    1996-01-01

    The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)

  9. C/SiC/MoSi2-Si multilayer coatings for carbon/carbon composites for protection against oxidation

    International Nuclear Information System (INIS)

    Zhang Yulei; Li Hejun; Qiang Xinfa; Li Kezhi; Zhang Shouyang

    2011-01-01

    Highlights: → A C/SiC/MoSi 2 -Si multilayer coating was prepared on C/C by slurry and pack cementation. → Multilayer coating can protect C/C for 300 h at 1873 K or 103 h at 1873 K in air. → The penetration cracks in the coating result in the weight loss of the coated C/C. → The fracture of the coated C/C in wind tunnel result from the excessive local stress. - Abstract: To improve the oxidation resistance of carbon/carbon (C/C) composites, a C/SiC/MoSi 2 -Si multilayer oxidation protective coating was prepared by slurry and pack cementation. The microstructure of the as-prepared coating was characterized by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The isothermal oxidation and erosion resistance of the coating was investigated in electrical furnace and high temperature wind tunnel. The results showed that the multilayer coating could effectively protect C/C composites from oxidation in air for 300 h at 1773 K and 103 h at 1873 K, and the coated samples was fractured after erosion for 27 h at 1873 K h in wind tunnel. The weight loss of the coated specimens was considered to be caused by the formation of penetration cracks in the coating. The fracture of the coated C/C composites might result from the excessive local stress in the coating.

  10. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  11. RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD

    International Nuclear Information System (INIS)

    Munoz-Martin, A.; Climent-Font, A.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Multilayer structures consisting of several alternated layers of SiGe and SiO 2 with thickness ranging from 2 or Si as well as the deposition of SiO 2 on Si show negligible incubation times. The deposition of SiO 2 on SiGe, however, exhibits an incubation time of several minutes, which would be related to the oxidation of the surface necessary for the SiO 2 deposition to start. In all cases the film thickness increases linearly with deposition time, thus allowing the growth rates to be determined. These data allow the deposition process of these very thin layers to be accurately controlled

  12. Study of two-dimensional hole gas at Si/SiGe/Si inverted interface

    International Nuclear Information System (INIS)

    Sadeghazdeh, M.A.; Mironov, O.A.; Parry, C.P.; Philips, P.J.; Parker, E.H.C.; Wahll, T.E.; Emeleus, C.J.

    1998-01-01

    We have studied the transport of two-dimensional hole gas (2DHG) at the inverted interface of a strained Si 0.8 Ge 0.2 quantum well. By application of bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n s can be controlled, in the range of (1.5-5.2)x10 11 cm -2 . At temperature T = 033 K, the Hall mobility is 4650 cm 2 V -1 s -1 at the maximum carrier density. For lower sheet densities (n s 11 cm -2 ) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m* = (0.25 → 0.28)m o and the ratio of transport to quantum lifetimes α = (0.92 → 0.85) for the corresponding carrier density change of n s = (5.2 → 2.5)x10 11 cm -2 . These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n s , short range interface roughness scattering. (author)

  13. The Effect of Si Morphology on Machinability of Al-Si Alloys

    Directory of Open Access Journals (Sweden)

    Muhammet Uludağ

    2015-12-01

    Full Text Available Many of the cast parts require some sort of machining like milling, drilling to be used as a finished product. In order to improve the wear properties of Al alloys, Si is added. The solubility of Si in Al is quite low and it has a crystallite type structure. It behaves as particulate metal matrix composite which makes it an attractive element. Thus, the wear and machinability properties of these type of alloys depend on the morphology of Si in the matrix. In this work, Sr was added to alter the morphology of Si in Al-7Si and Al-12Si. Cylindrical shaped samples were cast and machinability characteristics of Sr addition was studied. The relationship between microstructure and machinability was evaluated.

  14. SiC/SiC fuel cladding R and D Project 'SCARLET': Status and future plan

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira

    2015-01-01

    This paper provides the recent progress in SiC/SiC development towards early utilisation for LWRs based on NITE method. After the March 11 Disaster in East-Japan, ensuring safe technology for LWR became a top priority R and D in nuclear energy policy of Japan. Along this line, replacement of Zircaloy claddings with SiC/SiC based fuel cladding is becoming one of the most attractive options and a MEXT fund based project, SCARLET, and a METI fund based project have been launched as 5-year termed projects at Muroran Institute of Technology. These projects care for NITE process for making long SiC/SiC fuel pins and connecting technology integration. The SCARLET project also includes coolant compatibility and irradiation effect evaluations as LWR and LMFBR materials. The outline and the present status of the SCARLET project will be briefly introduced in the present paper. (authors)

  15. Si/SiC heterojunction optically controlled transistor with charge compensation layer

    Directory of Open Access Journals (Sweden)

    Pu Hongbin

    2016-01-01

    Full Text Available A novel n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has been studied in the paper. The performance of the device is simulated using Silvaco Atlas tools, which indicates excellent performances of the device in both blocking state and conducting state. The device also has a good switching characteristic with 0.54μs as rising time and 0.66μs as falling time. With the charge compensation layer, the breakdown voltage and the spectral response intensity of the device are improved by 90V and 33A/W respectively. Compared with optically controlled transistor without charge compensation layer, the n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has a better performance.

  16. Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Chen, S.Y.; Chen, L.J.

    2006-01-01

    Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

  17. Structure and chemistry of passivated SiC/SiO{sub 2} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Houston Dycus, J.; Xu, Weizong; LeBeau, James M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States); Lichtenwalner, Daniel J.; Hull, Brett; Palmour, John W. [Power Devices R& D, Wolfspeed, A Cree Company, Research Triangle Park, North Carolina 27709 (United States)

    2016-05-16

    Here, we report on the chemistry and structure of 4H-SiC/SiO{sub 2} interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO{sub 2} interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.

  18. The structure modification of Si-SiO2 irradiated by Fe+ ion

    International Nuclear Information System (INIS)

    Jin Tao; Ma Zhongquan; Guo Qi

    1992-01-01

    The effect of the iron ion implantation on the oxide surface and SiO 2 -Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS), and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe + ion implantation are also discussed and analyzed

  19. SiC Discrete Power Devices

    National Research Council Canada - National Science Library

    Baliga, B

    2000-01-01

    .... The investigation of the poor performance of the 4H-SiC ACCUFETs provided insights for changes in device design and process flow, for improving their breakdown voltage and specific on-resistance...

  20. Mass and QEC value of 26Si

    International Nuclear Information System (INIS)

    Eronen, T.; Elomaa, V.-V.; Hager, U.; Hakala, J.; Jokinen, A.; Kankainen, A.; Kessler, T.; Moore, I. D.; Rahaman, S.; Rissanen, J.; Weber, C.; Aeystoe, J.

    2009-01-01

    The Q EC value of the superallowed β emitter 26 Si has been measured with the JYFLTRAP Penning trap facility to be 4840.85(10) keV which is ten times more precise than any previous measurement. This leaves only the branching ratio to be improved before the Ft value of 26 Si can be used to test the conserved vector current hypothesis. As a consequence, the 25 Al(p,γ) 26 Si reaction Q-value (Q pγ ) was improved to be 5513.7(5) keV, limited now by the mass excess of 25 Al. The new Q pγ value changes the stellar production rate of 26 Si in nova ignition temperatures by about 10%

  1. Ternary alloying study of MoSi2

    International Nuclear Information System (INIS)

    Yi, D.; Li, C.; Akselsen, O.M.; Ulvensoen, J.H.

    1998-01-01

    Ternary alloying of MoSi 2 with adding a series of transition elements was investigated by X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy (TEM), and energy dispersive spectroscopy (EDS). Iron, Co, Ni, Cr, V, Ti, and Nb were chosen as alloying elements according to the AB 2 structure map or the atomic size factor. The studied MoSi 2 base alloys were prepared by the arc melting process from high-purity metals. The EDS analysis showed that Fe, Co, and Ni have no solid solubility in as-cast MoSi 2 , while Cr, V, Ti, and Nb exhibit limited solid solubilities, which were determined to be 1.4 ± 0.7, 1.4 ± 0.4, 0.4 ± 0.1, and 0.8 ± 0.1. Microstructural characterization indicated that Mo-Si-M VIII (M VIII = Fe, Co, Ni) and Mo-Si-Cr alloys have a two-phase as-cast microstructure, i.e., MoSi 2 matrix and the second-phase FeSi 2 , CoSi, NiSi 2 , and CrSi 2 , respectively. In as-cast Mo-Si-V, Mo-Si-Ti, and Mo-Si-Nb alloys, besides MoSi 2 and C40 phases, the third phases were observed, which have been identified to be (Mo, V) 5 Si 3 , TiSi 2 , and (Mo, Nb) 5 Si 3

  2. Si-Sb-Te materials for phase change memory applications

    International Nuclear Information System (INIS)

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  3. RBS using {sup 28}Si beams

    Energy Technology Data Exchange (ETDEWEB)

    Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia); Mitchell, I.V. [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1996-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  4. RBS using {sup 28}Si beams

    Energy Technology Data Exchange (ETDEWEB)

    Ophel, T R [Australian National Univ., Canberra, ACT (Australia); Mitchell, I V [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1997-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  5. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  6. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    International Nuclear Information System (INIS)

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  7. Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

    KAUST Repository

    Hu, Liangbing

    2011-01-01

    We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.

  8. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Science.gov (United States)

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2018-02-01

    As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  9. SiPM properties at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Biroth, Maik; Achenbach, Patrick; Thomas, Andreas [Institut fuer Kernphysik, Johannes Gutenberg-Universitaet, Mainz (Germany); Downie, Evangeline [George Washington University, DC (United States); Collaboration: A2-Collaboration

    2015-07-01

    At the electron accelerator Mainzer Mikrotron (MAMI) an active target build of polarizable scintillators will be operated at approximately 25 mK. To read out the scintillation light, the photodetectors have to withstand cryogenic temperatures of 4 K and high count rates. Therefore the properties of different types of silicon photomultipliers (SiPMs) were studied at cryogenic temperatures. In liquid nitrogen at 77 K, problems with quenching in Hamamatsu SiPMs and with the protective epoxy layer covering Zecotek SiPMs were observed. Tests with one Zecotek SiPM were successful after removal of the epoxy layer in liquid helium at 4 K and no after-pulses could be observed. Fundamental parameters like break-down voltage, single-pixel gain, crosstalk probability and the dark-count rate were measured and compared to room temperature. The photon detection efficiency was estimated by SiPMs response to short LED pulses. All these parameters were extracted by curve-fitting of SiPM charge spectra with a new analytical function.

  10. Separation of stress-free AlN/SiC thin films from Si substrate

    International Nuclear Information System (INIS)

    Redkov, A V; Osipov, A V; Mukhin, I S; Kukushkin, S A

    2016-01-01

    We separated AlN/SiC film from Si substrate by chemical etching of the AlN/SiC/Si heterostructure. The film fully repeats the size and geometry of the original sample and separated without destroying. It is demonstrated that a buffer layer of silicon carbide grown by a method of substitution of atoms may have an extensive hollow subsurface structure, which makes it easier to overcome the differences in the coefficients of thermal expansion during the growth of thin films. It is shown that after the separation of the film from the silicon substrate, mechanical stresses therein are almost absent. (paper)

  11. Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

    International Nuclear Information System (INIS)

    Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

    1990-01-01

    Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly

  12. Stability of Ta-encapsulating Si clusters on Si(111)-(7x7) surfaces

    CERN Document Server

    Uchida, N; Miyazaki, T; Kanayama, T

    2003-01-01

    Tantalum containing Si cluster ions TaSi sub 1 sub 0 sub - sub 1 sub 3 H sub x sup + were synthesized in an ion trap and deposited onto Si(111)-(7x7) surfaces with a kinetic energy of 18 eV. Scanning tunnelling microscope observations revealed that the clusters adsorbed on the surface without decomposition, consistent with ab initio calculation results, that predicted the clusters would have stable Si-cage structures with a Ta atom at the centre. (rapid communication)

  13. Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

    Science.gov (United States)

    Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich

    2009-04-01

    Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

  14. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System

    Science.gov (United States)

    2015-10-09

    and conclusions The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8...Abstract The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8, SnD4. The...AFRL-AFOSR-VA-TR-2016-0044 Next generation, Si -compatible materials and devices in the Si - Ge -Sn system John Kouvetakis ARIZONA STATE UNIVERSITY Final

  15. SiNx layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

    International Nuclear Information System (INIS)

    Cho, Yunae; Kim, Eunah; Gwon, Minji; Kim, Dong-Wook; Park, Hyeong-Ho; Kim, Joondong

    2015-01-01

    We compared nanopatterned Si solar cells with and without SiN x layers. The SiN x layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN x layer played a crucial role in the improved carrier collection of the nanostructured solar cells

  16. White photoluminescence from Si/SiO{sub 2} nanostructured film

    Energy Technology Data Exchange (ETDEWEB)

    Duong, P.H.; Ngan, N.T.T.; Tuan, C.A. [Institute of Materials Science, Vietnamese Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi (Viet Nam); Huy, P.T. [International Training Institute of Materials Science, Hanoi University of Technology, 1 Dai Co Viet, Hanoi (Viet Nam); Itoh, T. [Graduate School of Engineering Science, Osaka University, Toyonaka (Japan)

    2008-12-15

    We present in this work the results of PL measurement of Si-NC embedded in Si/SiO{sub 2} multilayer system. A very intense broad luminescence band was observed in the sample under illumination in vacuum by UV laser line. The PL intensity enhancement and quenching effect observed in different ambients can be attributed to the energy exchange from NC to MO. The storage of the annealed sample in vacuum for a long time drastically changed the PL properties of Si-NC. The origin of these phenomena will be discussed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Specimen size effect considerations for irradiation studies of SiC/SiC

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

  18. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    International Nuclear Information System (INIS)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-01-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

  19. Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

    International Nuclear Information System (INIS)

    Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

    1985-01-01

    Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

  20. Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

    Directory of Open Access Journals (Sweden)

    Zhuk Sergey I.

    2017-01-01

    Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

  1. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Science.gov (United States)

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  2. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

    2014-08-15

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  3. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

    Science.gov (United States)

    Khazaka, Rami; Michaud, Jean-François; Vennéguès, Philippe; Nguyen, Luan; Alquier, Daniel; Portail, Marc

    2016-11-01

    In this contribution, we performed the growth of a 3C-SiC/Si/3C-SiC layer stack on a Si(001) substrate by means of chemical vapor deposition. We show that, by tuning the growth conditions, the 3C-SiC epilayer can be grown along either the [111] direction or the [110] direction. The key parameter for the growth of the desired 3C-SiC orientation on the Si(110)/3C-SiC(001)/Si(001) heterostructure is highlighted and is linked to the Si epilayer surface morphology. The epitaxial relation between the layers has been identified using X-ray diffraction and transmission electron microscopy (TEM). We showed that, regardless of the top 3C-SiC epilayer orientation, domains rotated by 90° around the growth direction are present in the epilayer. Furthermore, the difference between the two 3C-SiC orientations was investigated by means of high magnification TEM. The results indicate that the faceted Si(110) epilayer surface morphology results in a (110)-oriented 3C-SiC epilayer, whereas a flat hetero-interface has been observed between 3C-SiC(111) and Si(110). The control of the top 3C-SiC growth direction can be advantageous for the development of new micro-electro-mechanical systems.

  4. Revision of the Li13Si4 structure.

    Science.gov (United States)

    Zeilinger, Michael; Fässler, Thomas F

    2013-11-06

    Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li-Si system is the phase Li13Si4 (trideca-lithium tetra-silicide), the structure of which has been determined previously [Frank et al. (1975 ▶). Z. Naturforsch. Teil B, 30, 10-13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i) the introduction of a split position for one Li site [occupancy ratio 0.838 (7):0.162 (7)], (ii) the anisotropic refinement of atomic displacement parameters for all atoms, and (iii) a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si-Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si-Si dumbbells at z = 0.5.

  5. Electrospun a-Si using Liquid Silane/Polymer Inks

    Energy Technology Data Exchange (ETDEWEB)

    Doug Schulz

    2010-12-09

    Amorphous silicon nanowires (a-SiNWs) were prepared by electrospinning cyclohexasilane (Si{sub 6}H{sub 12}) admixed with polymethylmethacrylate (PMMA) in toluene. Raman spectroscopy characterization of these wires (d {approx} 50-2000 nm) shows 350 C treatment yields a-SiNWs. Porous a-SiNWs are obtained using a volatile polymer.

  6. Comparative study of SiC- and Si-based photovoltaic inverters

    Science.gov (United States)

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  7. Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

    International Nuclear Information System (INIS)

    Olsen, S.H.; Dobrosz, P.; Escobedo-Cousin, E.; Bull, S.J.; O'Neill, A.G.

    2005-01-01

    Dual channel strained Si/SiGe CMOS architectures currently receive great attention due to maximum performance benefits being predicted for both n- and p-channel MOSFETs. Epitaxial growth of a compressively strained SiGe layer followed by tensile strained Si can create a high mobility buried hole channel and a high mobility surface electron channel on a single relaxed SiGe virtual substrate. However, dual channel n-MOSFETs fabricated using a high thermal budget exhibit compromised mobility enhancements compared with single channel devices, in which both electron and hole channels form in strained Si. This paper investigates the mobility-limiting mechanisms of dual channel structures. The first evidence of increased interface roughness due to the introduction of compressively strained SiGe below the tensile strained Si channel is presented. Interface corrugations degrade electron mobility in the strained Si. Roughness measurements have been carried out using AFM and TEM. Filtering AFM images allowed roughness at wavelengths pertinent to carrier transport to be studied and the results are in agreement with electrical data. Furthermore, the first comparison of strain measurements in the surface channels of single and dual channel architectures is presented. Raman spectroscopy has been used to study channel strain both before and after processing and indicates that there is no impact of the buried SiGe layer on surface macrostrain. The results provide further evidence that the improved performance of the single channel devices fabricated using a high thermal budget arises from improved surface roughness and reduced Ge diffusion into the Si channel

  8. Si/C and H coadsorption at 4H-SiC{0001} surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wachowicz, E., E-mail: elwira@ifd.uni.wroc.pl [Institute of Experimental Physics, University of Wrocław, Plac M. Borna 9, PL-50-204 Wrocław (Poland); Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, PL-02-106 Warsaw (Poland)

    2016-06-15

    Highlights: • Si on C-terminated and C on Si-terminated surface adsorb in the H{sub 3} hollow site. • The preferred adsorption site is in contrary to the stacking order of bulk crystal. • The presence of hydrogen increases the adsorption energy of Si/C. • Hydrogen weakens the bonds between the adsorbed Si or C and the surface. • Carbon adsorbs on top of the surface carbon on the C-terminated surface. • With both C and H on Si-terminated surface the surface state vanishes. - Abstract: Density functional theory (DFT) study of adsorption of 0.25 monolayer of either Si or C on 4H-SiC{0001} surfaces is presented. The adsorption in high-symmetry sites on both Si- and C-terminated surfaces was examined and the influence of the preadsorbed 0.25 ML of hydrogen on the Si/C adsorption was considered. It was found out that for Si on C-terminated surface and C on Si-terminated the most favourable is threefolded adsorption site on both clean and H-precovered surface. This is contrary to the bulk crystal stacking order which would require adsorption on top of the topmost surface atom. In those cases, the presence of hydrogen weakens the bonding of the adsorbate. Carbon on the C-terminated surface, only binds on-top of the surface atom. The C−C bond-length is almost the same for the clean surface and for one with H and equals to ∼1.33 Å which is shorter by ∼0.2 than in diamond. The analysis of the electronic structure changes under adsorption is also presented.

  9. Sr-Al-Si co-segregated regions in eutectic Si phase of Sr-modified Al-10Si alloy.

    Science.gov (United States)

    Timpel, M; Wanderka, N; Schlesiger, R; Yamamoto, T; Isheim, D; Schmitz, G; Matsumura, S; Banhart, J

    2013-09-01

    The addition of 200 ppm strontium to an Al-10 wt% Si casting alloy changes the morphology of the eutectic silicon phase from coarse plate-like to fine fibrous networks. In order to clarify this modification mechanism the location of Sr within the eutectic Si phase has been investigated by a combination of high-resolution methods. Whereas three-dimensional atom probe tomography allows us to visualise the distribution of Sr on the atomic scale and to analyse its local enrichment, transmission electron microscopy yields information about the crystallographic nature of segregated regions. Segregations with two kinds of morphologies were found at the intersections of Si twin lamellae: Sr-Al-Si co-segregations of rod-like morphology and Al-rich regions of spherical morphology. Both are responsible for the formation of a high density of multiple twins and promote the anisotropic growth of the eutectic Si phase in specific crystallographic directions during solidification. The experimental findings are related to the previously postulated mechanism of "impurity induced twinning". Copyright © 2012 Elsevier B.V. All rights reserved.

  10. siMS Score: Simple Method for Quantifying Metabolic Syndrome

    OpenAIRE

    Soldatovic, Ivan; Vukovic, Rade; Culafic, Djordje; Gajic, Milan; Dimitrijevic-Sreckovic, Vesna

    2016-01-01

    Objective To evaluate siMS score and siMS risk score, novel continuous metabolic syndrome scores as methods for quantification of metabolic status and risk. Materials and Methods Developed siMS score was calculated using formula: siMS score = 2*Waist/Height + Gly/5.6 + Tg/1.7 + TAsystolic/130?HDL/1.02 or 1.28 (for male or female subjects, respectively). siMS risk score was calculated using formula: siMS risk score = siMS score * age/45 or 50 (for male or female subjects, respectively) * famil...

  11. Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

  12. Near-surface segregation in irradiated Ni3Si

    International Nuclear Information System (INIS)

    Wagner, W.; Rehn, L.E.; Wiedersich, H.

    1982-01-01

    The radiation-induced growth of Ni 3 Si films on the surfaces of Ni(Si) alloys containing = 3 Si phase has been observed. Post-irradiation depth profiling by Auger electron spectroscopy, as well as in situ analysis by high-resolution Rutherford backscattering spectrometry, reveals Si-enrichment at the surfaces of Ni(Si) alloys in excess of stoichiometric Ni 3 Si during irradiation. Thin, near-surface layers with silicon concentrations of 28 to 30 at.% are observed, and even higher Si enrichment is found in the first few atom layers. Transmission electron microscopy and selected area-electron diffraction were employed to characterize these Si-enriched layers. A complex, multiple-spot diffraction pattern is observed superposed on the diffraction pattern of ordered Ni 3 Si. The d-spacings obtained from the extra spots are consistent with those of the orthohexagonal intermetallic compound Ni 5 Si 2 . (author)

  13. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  14. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  15. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    International Nuclear Information System (INIS)

    Suvorova, N.A.; Lopez, C.M.; Irene, E.A.; Suvorova, A.A.; Saunders, M.

    2004-01-01

    (Ba,Sr)TiO 3 (BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO 2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO 2 on Si or 3.5 nm SiO 2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO 2 . Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density D it of an order of magnitude for oxidized Si substrates with a thicker SiO 2 underlayer. Further reduction of D it was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization

  16. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    Science.gov (United States)

    Suvorova, N. A.; Lopez, C. M.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

    2004-03-01

    (Ba,Sr)TiO3(BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.

  17. Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

    Science.gov (United States)

    Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

    2018-01-01

    The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

  18. Transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si1-xCx nanocomposites mixed with Si nanoparticles and C atoms

    International Nuclear Information System (INIS)

    Shin, J.W.; Oh, D.H.; Kim, T.W.; Cho, W.J.

    2009-01-01

    Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, and fast-Fourier transformed electron-diffraction patterns showed that n-butyl terminated Si nanoparticles were aggregated. The formation of Si 1-x C x nanocomposites was mixed with Si nanoparticles and C atoms embedded in a SiO 2 layer due to the diffusion of C atoms from n-butyl termination shells into aggregated Si nanoparticles. Atomic force microscopy (AFM) images showed that the Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms existed in almost all regions of the SiO 2 layer. The formation mechanism of Si nanoparticles and the transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms are described on the basis of the TEM, HRTEM, and AFM results. These results can help to improve the understanding of the formation mechanism of Si nanoparticles.

  19. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  20. Fabrication of highly oriented D03-Fe3Si nanocrystals by solid-state dewetting of Si ultrathin layer

    International Nuclear Information System (INIS)

    Naito, Muneyuki; Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko; Nakao, Motoi; Sudoh, Koichi

    2013-01-01

    In this paper, highly oriented nanocrystals of Fe 3 Si with a D0 3 structure are fabricated on SiO 2 using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO 2 layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe 3 Si nanocrystals with D0 3 , B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe 3 Si nanocrystals with a D0 3 single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0 3 -Fe 3 Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0 3 structure after post-deposition annealing

  1. Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

    International Nuclear Information System (INIS)

    Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.

    2005-01-01

    Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc

  2. Chemically activated graphene/porous Si@SiO{sub x} composite as anode for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Hua-Chao [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Yang, Xue-Lin, E-mail: xlyang@ctgu.edu.cn [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Zhang, Lu-Lu; Ni, Shi-Bing [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China)

    2014-10-15

    Chemically activated graphene/porous Si@SiO{sub x} (CAG/Si@SiO{sub x}) composite has been synthesized via magnesiothemic reduction of mesoporous SiO{sub 2} (MCM-48) to porous Si@SiO{sub x} and dispersing in the suspension of chemically activated graphene oxide (CAGO) followed by thermal reduction. The porous Si@SiO{sub x} particles are well encapsulated in chemically activated graphene (CAG) matrix. The resulting CAG/Si@SiO{sub x} composite exhibits a high reversible capacity and excellent cycling stability up to 763 mAh g{sup −1} at a current density of 100 mA g{sup −1} after 50 cycles. The porous structure of CAG layer and Si@SiO{sub x} is beneficial to accommodate volume expansion of Si during discharge and charge process and the interconnected CAG improves the electronic conductivity of composite. - Highlights: • Chemically activated graphene encapsulated porous Si composite was prepared. • The graphene offers a continuous electrically conductive network. • The porous structure can accommodate volume expansion of Si-based materials. • The composite exhibits excellent lithium storage performance.

  3. Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

    Directory of Open Access Journals (Sweden)

    Minghua Li

    2013-01-01

    Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

  4. Simulations of Proton Implantation in Silicon Carbide (SiC)

    Science.gov (United States)

    2016-03-31

    Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation ; proton; stopping and range of

  5. Synthesis of micro-sized interconnected Si-C composites

    Science.gov (United States)

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  6. SiC-Si as a support material for oxygen evolution electrode in PEM steam electrolysers

    DEFF Research Database (Denmark)

    Nikiforov, Aleksey; Tomás García, Antonio Luis; Petrushina, Irina

    2011-01-01

    The need of higher energy efficiency in hydrogen production has promoted the research on improved catalysts for water electrolysis. In this work, a novel supported catalyst for oxygen evolution electrodes was prepared and characterized with different techniques. IrO2 supported on a SiC/Si composite...

  7. Progressive degradation in a-Si: H/SiN thin film transistors

    NARCIS (Netherlands)

    Merticaru, A.R.; Mouthaan, A.J.; Kuper, F.G.

    2003-01-01

    In this paper we present the study of gate-stress induced degradation in a-Si:H/SiN TFTs. The drain current transient during gate bias stress (forward or reverse bias) and subsequent relaxation cannot be fitted with the models existent in the literature but it shows to be described by a progressive

  8. INCLUSIVE SYSTEMATICS FOR SI-28+SI-28 REACTIONS BETWEEN 20 AND 35 MEV PER NUCLEON

    NARCIS (Netherlands)

    BOX, PF; GRIFFIOEN, KA; DECOWSKI, P; BOOTSMA, T; GIERLIK, E; VANNIEUWENHUIZEN, GJ; TWENHOFEL, C; KAMERMANS, R; WILSCHUT, HW; GIORNI, A; MORAND, C; DEMEYER, A; GUINET, D

    Inclusive velocity spectra of heavy ions produced in the Si-28 + Si-28 reaction at 22, 26, 30, and 35 MeV per nucleon were measured and decomposed into peripheral and central components using an analytical moving-source parametrization. The persistence of incomplete fusion followed by evaporation

  9. Phenomenological inelastic constitutive equations for SiC and SiC fibers under irradiation

    International Nuclear Information System (INIS)

    El-Azab, A.; Ghoniem, N.M.

    1994-01-01

    Experimental data on irradiation-induced dimensional changes and creep in β-SiC and SiC fibers is analyzed, with the objective of studying the constitutive behavior of these materials under high-temperature irradiation. The data analysis includes empirical representation of irradiation-induced dimensional changes in SiC matrix and SiC fibers as function of time and irradiation temperature. The analysis also includes formulation of simple scaling laws to extrapolate the existing data to fusion conditions on the basis of the physical mechanisms of radiation effects on crystalline solids. Inelastic constitutive equations are then developed for SCS-6 SiC fibers, Nicalon fibers and CVD SiC. The effects of applied stress, temperature, and irradiation fields on the deformation behavior of this class of materials are simultaneously represented. Numerical results are presented for the relevant creep functions under the conditions of the fusion reactor (ARIES IV) first wall. The developed equations can be used in estimating the macro mechanical properties of SiC-SiC composite systems as well as in performing time-dependent micro mechanical analysis that is relevant to slow crack growth and fiber pull-out under fusion conditions

  10. NIMROD Simulations of the HIT-SI and HIT-SI3 Devices

    Science.gov (United States)

    Morgan, Kyle; Jarboe, Tom; Hossack, Aaron; Chandra, Rian; Everson, Chris

    2017-10-01

    The Helicity Injected Torus with Steady Inductive helicity injection (HIT-SI) experiment uses a set of inductively driven helicity injectors to apply non-axisymmetric current drive on the edge of the plasma, driving an axisymmetric spheromak equilibrium in a central confinement volume. Significant improvements have been made to extended MHD modeling of HIT-SI, with both the resolution of disagreement at high injector frequencies in HIT-SI in addition to successes with the new upgraded HIT-SI3 device. Previous numerical studies of HIT-SI, using a zero-beta eMHD model, focused on operations with a drive frequency of 14.5 kHz, and found reduced agreement with both the magnetic profile and current amplification at higher frequencies (30-70 kHz). HIT-SI3 has three helicity injectors which are able to operate with different mode structures of perturbations through the different relative temporal phasing of the injectors. Simulations that allow for pressure gradients have been performed in the parameter regimes of both devices using the NIMROD code and show improved agreement with experimental results, most notably capturing the observed Shafranov-shift due to increased beta observed at higher finj in HIT-SI and the variety of toroidal perturbation spectra available in HIT-SI3. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences under Award Number DE-FG02- 96ER54361.

  11. Weld microstructure in cast AlSi9/SiC(p metal matrix composites

    Directory of Open Access Journals (Sweden)

    J. Wysocki

    2009-04-01

    Full Text Available Welded joint in cast AlSi9/SiC/20(p metal matrix composite by manual TIG arc welding using AlMg5 filler metal has been described inhis paper. Cooling curves have been stated, and the influence in distribution of reinforced particles on crystallization and weldmicrostructure. Welded joint mechanical properties have been determined: hardness and tensile.

  12. Atomic state and characterization of nitrogen at the SiC/SiO2 interface

    International Nuclear Information System (INIS)

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-01

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

  13. Atomization of U3Si2/U3Si for research reactor fuel

    International Nuclear Information System (INIS)

    Kuk, Il Hiun

    2004-01-01

    Instead of comminuting, U 3 Si 2 /U 3 Si powders are produced by atomizating directly from the molten alloys. Many benefits are introduced by applying the atomization technique: reduction of the process, homogeneous alloy composition within a particle and between particles, increase of the thermal conductivity and decrease of the chemical reactivity with aluminium due to particle's spherical shape. (author)

  14. Effects of dual-ion irradiation on the swelling of SiC/SiC composites

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

    2005-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

  15. New evaluation method of crack growth in SiC/SiC composites using interface elements

    International Nuclear Information System (INIS)

    Serizawa, H.; Ando, M.; Lewinsohn, C.A.; Murakawa, H.

    2000-01-01

    Crack propagation behavior in SiC/SiC composites was analyzed using a new computer simulation method that included time-dependent interface elements. The simulation method was used to describe the time-dependent crack growth in SiC/SiC composites under four-point bending of single-edge-notched beam bend-bars. Two methods were used to simulate time-dependent crack growth in SiC/SiC composites due to fiber creep. In one method, the creep property was introduced into the interface elements by the general method of finite element method (FEM) analysis. In the second method, a new technique making the best use of the potential function was used to represent crack closure tractions due to creeping fibers. The stage-II slow crack growth of a general creep deformation was simulated by both methods. Additionally, stage-III crack growth and the transition from stage-II to stage-III could be simulated by the new method. The new method has the potential to completely simulate time-dependent crack growth behavior in SiC/SiC composites due to fiber creep

  16. Anomalous defect processes in Si implanted amorphous SiO2, II

    International Nuclear Information System (INIS)

    Fujita, Tetsuo; Fukui, Minoru; Okada, Syunji; Shimizu-Iwayama, Tsutomu; Hioki, Tatsumi; Itoh, Noriaki

    1994-01-01

    Aanomalous features of the defects in Si implanted amorphous SiO 2 are reported. The numbers of E 1 prime centers and B 2 centers are found to increase monotonically with implanted Si dose, in contrast to the saturating feature of these numbers in Ar implanted samples. Moreover, when H ions are implanted in amorphous SiO 2 predamaged by Si implantation, both of the density and the number of E 1 prime centers increase and they reach a constant value at a small H dose. We point out that these anomalies can be explained in terms of the difference in the cross-section for defect annihilation in the specimens implanted with Si ions and other ions, in accordance with the homogeneous model proposed by Devine and Golanski. We consider that the main mechanism of defect annihilation is the recombination of an E 1 prime center and an interstitial O, which is stabilized by an implanted Si, reducing the cross-section in Si-implanted specimens. ((orig.))

  17. Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

    International Nuclear Information System (INIS)

    Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

    2000-01-01

    The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  18. Computer aided cooling curve analysis for Al-5Si and Al-11Si alloys ...

    African Journals Online (AJOL)

    The effect of grain refiner, modifier, and combination of grain refiner cum modifier was studied on Al-5Si and Al-11Si alloys using computer aided cooling curve analysis. For combined grain refinement and modification effect, Al-Ti-B-Sr single master alloy was developed that acted as both grain refiner and modifier.

  19. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  20. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

    2008-07-30

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

  1. Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems

    DEFF Research Database (Denmark)

    Shiryaev, S.Y.; Jensen, Flemming; Hansen, J. Lundsgaard

    1997-01-01

    New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the or...

  2. Nonviral pulmonary delivery of siRNA.

    Science.gov (United States)

    Merkel, Olivia M; Kissel, Thomas

    2012-07-17

    RNA interference (RNAi) is an important part of the cell's defenses against viruses and other foreign genes. Moreover, the biotechnological exploitation of RNAi offers therapeutic potential for a range of diseases for which drugs are currently unavailable. Unfortunately, the small interfering RNAs (siRNAs) that are central to RNAi in the cytoplasm are readily degradable by ubiquitous nucleases, are inefficiently targeted to desired organs and cell types, and are excreted quickly upon systemic injection. As a result, local administration techniques have been favored over the past few years, resulting in great success in the treatment of viral infections and other respiratory disorders. Because there are several advantages of pulmonary delivery over systemic administration, two of the four siRNA drugs currently in phase II clinical trials are delivered intranasally or by inhalation. The air-blood barrier, however, has only limited permeability toward large, hydrophilic biopharmaceuticals such as nucleic acids; in addition, the lung imposes intrinsic hurdles to efficient siRNA delivery. Thus, appropriate formulations and delivery devices are very much needed. Although many different formulations have been optimized for in vitro siRNA delivery to lung cells, only a few have been reported successful in vivo. In this Account, we discuss both obstacles to pulmonary siRNA delivery and the success stories that have been achieved thus far. The optimal pulmonary delivery vehicle should be neither cytotoxic nor immunogenic, should protect the payload from degradation by nucleases during the delivery process, and should mediate the intracellular uptake of siRNA. Further requirements include the improvement of the pharmacokinetics and lung distribution profiles of siRNA, the extension of lung retention times (through reduced recognition by macrophages), and the incorporation of reversible or stimuli-responsive binding of siRNA to allow for efficient release of the siRNAs at the

  3. Compression of Fe-Si-H alloys

    Science.gov (United States)

    Tagawa, S.; Ohta, K.; Hirose, K.

    2014-12-01

    The light elements in the Earth's core have not been fully identified yet, but hydrogen is now collecting more attention in part because recent planet formation theory suggests that large amount of water should have been brought to the Earth during its formation (giant-impact stage). Nevertheless, the effect of hydrogen on the property of iron alloys is little known so far. The earlier experimental study by Hirao et al. [2004 GRL] examined the compression behavior of dhcp FeHx (x ≈ 1) and found that it becomes much stiffer than pure iron above 50 GPa, where magnetization disappears. Here we examined the solubility of hydrogen into iron-rich Fe-Si alloys and the compression behavior of dhcp Fe-Si-H alloy at room temperature. Fe+6.5wt.%Si or Fe+9wt.%Si foil was loaded into a diamond-anvil cell (DAC), and then liquid hydrogen was introduced at temperatures below 20 K. X-ray diffraction measurements at SPring-8 revealed the formation of a dhcp phase with or without thermal annealing by laser above 8.4 GPa. The concentration of hydrogen in such dhcp lattice was calculated following the formula reported by Fukai [1992]; y = 0.5 and 0.2 for Fe-6.5wt.%Si-H or Fe-9wt.%Si-H alloys, respectively when y is defined as Fe(1-x)SixHy. Unlike Fe-H alloy, hydrogen didn't fully occupy the octahedral sites even under hydrogen-saturated conditions in the case of Fe-Si-H system. Anomaly was observed in obtained pressure-volume curve around 44 Å3 of unit-cell volume for both Fe-6.5wt.%Si-H and Fe-9wt.%Si-H alloys, which may be related to the spin transition in the dhcp phase. They became slightly stiffer at higher pressures, but their compressibility was still similar to that of pure iron.

  4. Strain distribution in freestanding Si/Si{sub x}N{sub y} membranes studied by transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Hongye, E-mail: hongye18@mm.kyushu-u.ac.j [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Ikeda, Ken-ichi; Hata, Satoshi; Nakashima, Hideharu [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Wang, Dong; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2010-09-30

    Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous Si{sub x}N{sub y} layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in Si{sub x}N{sub y}-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the Si{sub x}N{sub y} layer beneath the Si layer is replaced by a SiO{sub 2} buried oxide layer.

  5. The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN sub x /a-Si:H/a-SiN sub x structures

    CERN Document Server

    Zhang Li; Wang Li; Li Wei; Xu Jun; Huang Xin Fan; Chen Kun Ji

    2002-01-01

    Size-controlled nanocrystalline silicon (nc-Si) has been prepared from a-SiN sub x /a-Si:H/a-SiN sub x ('a' standing for amorphous) structures by thermal annealing. Transmission electron microscope analyses show that the lateral size of the nc-Si is controlled by the annealing conditions and the a-Si sublayer thickness. The deviation of the nc-Si grain size distribution decreases with the a-Si sublayer thickness, so thinner a-Si sublayers are favourable for obtaining uniform nc-Si grains. In the a-Si:H (10 nm) sample annealed at 1000 deg. C for 30 min, an obvious bi-modal size distribution of nc-Si grains appears, but no obvious bi-modal size distribution is found in other samples with thinner a-Si:H sublayers. On the basis of the experimental results, we discuss the process of transition from the sphere-like shape to the disc-like shape in the growth model of the nc-Si crystallization. The critical thickness of the a-Si sublayer for the constrained crystallization can be determined by the present model. More...

  6. Strained Si engineering for nanoscale MOSFETs

    International Nuclear Information System (INIS)

    Park, Jea-Gun; Lee, Gon-Sub; Kim, Tae-Hyun; Hong, Seuck-Hoon; Kim, Seong-Je; Song, Jin-Hwan; Shim, Tae-Hun

    2006-01-01

    We have revealed a strain relaxation mechanism for strained Si grown on a relaxed SiGe-on-insulator structure fabricated by the bonding, dislocation sink, or condensation method. Strain relaxation for both the bonding and dislocation sink methods was achieved by grading the Ge concentration; in contrast, the relaxation for the condensation method was achieved through Ge atom condensation during oxidation. In addition, we estimated the surface roughness and threading-dislocation pit density for relaxed SiGe layer fabricated by the bonding, dislocation sink, or condensation method. The surface roughness and threading-dislocation pit density for the bonding, dislocation sink, and condensation methods were 2.45, 0.46, and 0.40 nm and 5.0 x 10 3 , 9 x 10 3 , and 0, respectively. In terms of quality and cost-effectiveness, the condensation method was superior to the bonding and dislocation sink methods for forming strained Si on a relaxed SiGe-on-insulator structure

  7. Carrier recombination in tailored multilayer Si/Si{sub 1−x}Ge{sub x} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Mala, S.A. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Tsybeskov, L., E-mail: tsybesko@njit.edu [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Lockwood, D.J.; Wu, X.; Baribeau, J.-M. [National Research Council, Ottawa, ON, Canada KIA 0R6 (Canada)

    2014-11-15

    Photoluminescence (PL) measurements were performed in Si/Si{sub 1−x}Ge{sub x} nanostructures with a single Si{sub 0.92}Ge{sub 0.08} nanometer-thick layer incorporated into Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si{sub 0.92}Ge{sub 0.08} nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

  8. Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

    International Nuclear Information System (INIS)

    Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

    2002-01-01

    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

  9. Positron annihilation in Si and Si-related materials in thermal equilibrium at high temperature

    International Nuclear Information System (INIS)

    Uedono, A.; Muramatsu, M.; Ubukata, T.; Tanino, H.; Shiraishi, T.; Tanigawa, S.; Takasu, S.

    2001-01-01

    Annihilation characteristics of positrons in the carbon/Si structure in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured as a function of incident positron energy in the temperature range between 298 K and 1473 K. Above 1173 K, the value of S corresponding to the annihilation of positrons near the carbon/Si interface started to increase, which was attributed to the carbonization of Si and the introduction of open-space defects due to the diffusion of Si atoms toward the carbon layer. The behavior of Ps in a thermally grown SiO 2 film was also studied at 298-1523 K. (orig.)

  10. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2002-01-01

    Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

  11. Joining of SiCf/SiC composites for thermonuclear fusion reactors

    International Nuclear Information System (INIS)

    Ferraris, M.; Badini, C.; Montorsi, M.; Appendino, P.; Scholz, H.W.

    1994-01-01

    Due to their favourable radiological behaviour, SiC f /SiC composites are promising structural materials for future use in fusion reactors. A problem to cope with is the joining of the ceramic composite material (CMC) to itself for more complex structures. Maintenance concepts for a reactor made of SiC f /SiC will demand a method of joining. The joining agents should comply with the low-activation approach of the base material. With the acceptable elements Si and Mg, sandwich structures of composite/metal/composite were prepared in Ar atmosphere at temperatures just above the melting points of the metals. Another promising route is the use of joining agents of boro-silicate glasses: their composition can be tailored to obtain softening temperatures of interest for fusion applications. The glassy joint can be easily ceramised to improve thermomechanical properties. The joining interfaces were investigated by SEM-EDS, XRD and mechanical tests. ((orig.))

  12. Formation of permeation barriers on ceramic SiC/SiC composites

    International Nuclear Information System (INIS)

    Racault, C.; Fenici, P.

    1996-01-01

    The effectiveness as permeation barriers of the following CVD and PVD (sputtering) coatings has been investigated: TiC+Al 2 O 3 (CVD), SiC(CVD), SiO 2 (CVD), TiN(CVD), TiN(CVD)+TiN(PVD) and SiC(CVD)+Al 2 O 3 (PVD). The substrate material was a SiC/SiC composite, proposed as low activation structural material for fusion applications. Permeation measurements were performed in the temperature range 300-750 K using deuterium at pressures in the range 0.5-150 kPa. A linear dependence of permeation rate on pressure was measured. The efficiency of the coatings as deuterium permeation barriers is discussed in terms of coating microstructure. The best result was obtained with a bilayer of TiN(CVD) (15 μm) +TiN(PVD) (8 μm). (orig.)

  13. On the compliant behaviour of free-standing Si nanostructures on Si(001) for Ge nanoheteroepitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kozlowski, Grzegorz

    2012-04-24

    Selective chemical vapor deposition Ge heteroepitaxy approaches for high quality Ge nanostructure growth with reasonable thermal budget must be developed for local Ge photonic module integration. A promising vision is offered by the compliant substrate effects within nanometer scale Ge/Si heteroepitaxial structures. Here, in contrast to the classical Ge deposition on bulk Si substrates, the thermal and lattice mismatch strain energy accumulated in the Ge epilayer is partially shifted to the free-standing Si nanostructure. This strain partitioning phenomenon is at the very heart of the nanoheteroepitaxy theory (NHE) and, if strain energy levels are correctly balanced, offers the vision to grow defect-free nanostructures of lattice mismatched semiconductors on Si. In case of the Ge/Si heterosystem with a lattice mismatch of 4.2%, the strain partitioning phenomenon is expected to be triggered when free-standing Si nanopillars with the width of 50 nm and below are used. In order to experimentally verify NHE with its compliant substrate effects, a set of free-standing Ge/Si nanostructures with diameter ranging from 150 to 50 nm were fabricated and investigated. The main limitation corresponds to a simultaneous detection of (a) the strain partitioning phenomenon between Ge and Si and (b) the absence of defects on the nano-scale. In this respect, synchrotron-based grazing incidence X-ray diffraction was applied to study the epitaxial relationship, defect and strain characteristics with high resolution and sensitivity in a non-destructive way. Raman spectroscopy supported by finite element method calculations were used to investigate the strain distribution within a single Ge/Si nanostructure. Special focus was devoted to transmission electron microscopy to determine the quality of the Ge epilayer. It was found, that although high quality Ge nanoclusters can be achieved by thermal annealing on Si pillars bigger than 50 nm in width, no proof of strain partitioning

  14. Geometric structure of thin SiO xN y films on Si(100)

    Science.gov (United States)

    Behrens, K.-M.; Klinkenberg, E.-D.; Finster, J.; Meiwes-Broer, K.-H.

    1998-05-01

    Thin films of amorphous stoichometric SiO xN y are deposited on radiation-heated Si(100) by rapid thermal low-pressure chemical vapour deposition. We studied the whole range of possible compositions. In order to determine the geometric structure, we used EXAFS and photoelectron spectroscopy. Tetrahedrons constitute the short-range units with a central Si atom connected to N and O. The distribution of the possible tetrahedrons can be described by a mixture of the Random Bonding Model and the Random Mixture Model. For low oxygen contents x/( x+ y)≤0.3, the geometric structure of the film is almost the structure of a-Si 3N 4, with the oxygen preferably on top of Si-N 3 triangles. Higher oxygen contents induce changes in the bond lengths, bond angles and coordination numbers.

  15. Polarized micro-Raman scattering characterization of Mg2Si nanolayers in (001) Si matrix

    International Nuclear Information System (INIS)

    Zlateva, G; Atanassov, A; Baleva, M; Nikolova, L; Abrashev, M V

    2007-01-01

    An orientational growth of the Mg 2 Si lattice relative to the Si lattice is considered assuming minimum mismatch of their lattice parameters. The Raman scattering cross-sections are calculated for the four possible orientations of the Mg 2 Si lattice positioned in this way. The integral intensity ratios for the F 2g mode of Mg 2 Si in different polarization configurations, obtained from the experimental spectra, are compared with the calculated ratios. It is found that the Mg 2 Si nanolayer's morphology is sensitive to the implantation energy, which determines both the peak Mg concentration in the initial implantation profile and its position in the sample depth. At a peak concentration of the order of the stoichiometric concentration, the layers are highly oriented. When the peak concentration is higher and the peak is placed closer to the surface, the layers are polycrystalline

  16. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    International Nuclear Information System (INIS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  17. Elevated Temperature Properties of Commercially Available NITE-SiC/SiC Composites

    International Nuclear Information System (INIS)

    Choi, Y.B.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: Continuous fiber-reinforced ceramic matrix composites (CMCs) have been expected as a new type of material having high fracture resistance up to a high temperature. In recent years, there have been extensive efforts in our research group to develop high performance SiC/SiC composites for energy applications, where improvements in mechanical properties and damage resistance by innovative new fabrication process with emphasis on interface improvement have been greatly accomplished. One of the most outstanding accomplishments is the Nano-powder Infiltration and Transient Eutectic (NITE) process using PyC coated Tyranno-SA fibers. For making SiC/SiC composites more attractive and competitive for high temperature structural components and for other industrial applications, one of the key issues is to demonstrate its reliability and safety under severe environments. Also to demonstrate the potential to produce SiC/SiC by NITE process from large scale production line at industries is very important. This paper provides fundamental database of mechanical properties and microstructure of Cera-NITE, the trade name of NITE-SiC/SiC composites. The mechanical properties were evaluated by uni-axial tensile test from room temperature to high temperatures. The tensile properties, including elastic modulus, PLS and ultimate tensile strength, are superior to those of other conventional SiC/SiC composites. The macroscopic observation of Cera-NITE indicated high density as planned with almost no-porosity and cracks. Furthermore, Cera-NITE showed outstanding microstructural uniformity. The characteristic variation coming from the sampling location was hardly observed.. Further information about database of properties and microstructure at evaluated temperature will be provided. (authors)

  18. Microhardness evaluation alloys Hf-Si-B; Avaliacao de microdureza de ligas Hf-Si-B

    Energy Technology Data Exchange (ETDEWEB)

    Gigolotti, Joao Carlos Janio; Costa, Eliane Fernandes Brasil [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Rocha, Elisa Gombio; Coelho, Gilberto Carvalho, E-mail: carlosjanio@uol.com.br, E-mail: eliane-costabrasi@hotmail.com, E-mail: cnunes@demar.eel.usp.br, E-mail: elisarocha@alunos.eel.usp.br, E-mail: coelho@demar.eel.usp.br [Universidade de Sao Paulo (USP), Lorena, SP (Brazil)

    2014-08-15

    The technological advance has generated increasing demand for materials that can be used under high temperature, what includes intermetallic MR-Si-B (MR = refractory metal) alloys with multiphase structures, that can also be applied in oxide environments. Thus, this work had for objective the micro hardness study of the Hf-Si-B system alloys, heat treated at 1600 deg C, in the Hf rich region. Hf-Si-B alloys had been produced with blades of Hf (min. 99.8%), Si (min. 99.998%) and B (min. 99.5%), in the voltaic arc furnace and heat treated at 1600 deg C under argon atmosphere. The relationship of the phases had been previously identified by X-ray diffraction and contrast in backscattered electron imaging mode. The alloys had their hardness analyzed by method Vickers (micro hardness) with load of 0.05 kgf and 0.2 kgf and application time of 20 s. The results, obtained from the arithmetic mean of measurements for each alloy on the heterogeneous region, showed a mean hardness of 11.08 GPA, with small coefficient of variation of 3.8%. The borides HfB2 (19.34 GPa) e HfB - 11.76 GPa, showed the hardness higher than the silicides Hf2Si (8.57 GPa), Hf5Si3 (9.63 GPa), Hf3Si2 (11.66 GPa), Hf5Si4 (10.00 GPa), HfSi (10.02 GPa) e HfSi2 (8.61 GPa). (author)

  19. A TEM study of strained SiGe/Si and related heteroepitaxial structures

    International Nuclear Information System (INIS)

    Benedetti, Alessandro

    2002-01-01

    The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

  20. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-01

    Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

  1. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  2. Correction of SiPM temperature dependencies

    International Nuclear Information System (INIS)

    Kaplan, A.

    2009-01-01

    The performance of a high granular analogue hadronic calorimeter (AHCAL) using scintillator tiles with built-in Silicon Photomultiplier (SiPM) readout is reported. A muon beam is used for the minimum ionizing particle (MIP) based calibration of the single cells. The calibration chain including corrections for the non-linearity of the SiPM is presented. The voltage and temperature dependencies of the SiPM signal have been investigated using the versatile LED system of the AHCAL. Monitoring and correction methods are discussed. Measurements from the operation 2006 and 2007 at the CERN SPS test beam and data provided by the Institute for Theoretical and Experimental Physics (ITEP) in Moscow are compared.

  3. Fluorine incorporation during Si solid phase epitaxy

    International Nuclear Information System (INIS)

    Impellizzeri, G.; Mirabella, S.; Romano, L.; Napolitani, E.; Carnera, A.; Grimaldi, M.G.; Priolo, F.

    2006-01-01

    We have investigated the F incorporation and segregation in preamorphized Si during solid phase epitaxy (SPE) at different temperatures and for several implanted-F energies and fluences. The Si samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen temperature and then enriched with F at different energies (65-150 keV) and fluences (0.07-5 x 10 14 F/cm 2 ). Subsequently, the samples were regrown by SPE at different temperatures: 580, 700 and 800 deg. C. We have found that the amount of F incorporated after SPE strongly depends on the SPE temperature and on the energy and fluence of the implanted-F, opening the possibility to tailor the F profile during SPE

  4. Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

    Directory of Open Access Journals (Sweden)

    Goloudina S.I.

    2017-01-01

    Full Text Available High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR spectroscopy, X-ray diffraction (XRD, Raman spectroscopy, transmission electon microscopy (TEM, transmission electron diffraction (TED, and scanning electron microscopy (SEM. XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111 substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111 film are aligned with four Si(111 planes at the SiC/Si interface. It was shown the SiC films (35 nm grown on Si(111 at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm were formed on Si (100 substrate at the same temperature. It was shown the SiC films (30-35 nm are able to cover the voids in Si substrate with size up to 10 μm.

  5. SiC/SiC composite fabricated with carbon nanotube interface layer and a novel precursor LPVCS

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2014-02-15

    Highlights: • The CNTs were distributed uniformly on the SiC fibers in the fabric by CVD process. • The microstructural evolution of the CNTs interface coating was studied. • The closed porosity was investigated by X-ray tomography. • The liquid precursor LPVCS exhibited high densification efficiency. - Abstract: Continuous SiC fiber reinforced SiC matrix composites (SiC/SiC) have been studied as promising candidate materials for nuclear applications. Three-dimensional SiC/SiC composite was fabricated via polymer impregnation and pyrolysis (PIP) process using carbon nanotubes (CNTs) as the interface layer and LPVCS as the polymer precursor. The microstructural evolution of the fiber/matrix interface was studied. The porosity, mechanical properties, thermal and electrical conductivities of the SiC/SiC composite were investigated. The results indicated that the high densification efficiency of the liquid precursor LPVCS resulted in a low porosity of the SiC/SiC composite. The SiC/SiC composite exhibited non-brittle fracture behavior, however, bending strength and fracture toughness of the composite were relatively low because of the absence of CNTs as the interface layer. The thermal and electrical conductivities of the SiC/SiC composite were low enough to meet the requirements desired for flow channel insert (FCI) applications.

  6. Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

    NARCIS (Netherlands)

    Pandraud, G.; Margallo-Balbas, E.; Sarro, P.M.

    2012-01-01

    We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a

  7. Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Rana, Kuldeep; Bengu, Erman

    2012-01-01

    We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of connected micro-crystals of β-SiC is formed, while, in the second process...

  8. SiC Seeded Crystal Growth

    Science.gov (United States)

    Glass, R. C.; Henshall, D.; Tsvetkov, V. F.; Carter, C. H., Jr.

    1997-07-01

    The availability of relatively large (30 mm) SiC wafers has been a primary reason for the renewed high level of interest in SiC semiconductor technology. Projections that 75 mm SiC wafers will be available in 2 to 3 years have further peaked this interest. Now both 4H and 6H polytypes are available, however, the micropipe defects that occur to a varying extent in all wafers produced to date are seen by many as preventing the commercialization of many types of SiC devices, especially high current power devices. Most views on micropipe formation are based around Frank's theory of a micropipe being the hollow core of a screw dislocation with a huge Burgers vector (several times the unit cell) and with the diameter of the core having a direct relationship with the magnitude of the Burgers vector. Our results show that there are several mechanisms or combinations of these mechanisms which cause micropipes in SiC boules grown by the seeded sublimation method. Additional considerations such as polytype variations, dislocations and both impurity and diameter control add to the complexity of producing high quality wafers. Recent results at Cree Research, Inc., including wafers with micropipe densities of less than 1 cm - 2 (with 1 cm2 areas void of micropipes), indicate that micropipes will be reduced to a level that makes high current devices viable and that they may be totally eliminated in the next few years. Additionally, efforts towards larger diameter high quality substrates have led to production of 50 mm diameter 4H and 6H wafers for fabrication of LEDs and the demonstration of 75 mm wafers. Low resistivity and semi-insulating electrical properties have also been attained through improved process and impurity control. Although challenges remain, the industry continues to make significant progress towards large volume SiC-based semiconductor fabrication.

  9. Si(Li) X-ray detector

    International Nuclear Information System (INIS)

    Yuan Xianglin; Li Zhiyong; Hong Xiuse

    1990-08-01

    The fabrication technology of the 10∼80 mm 2 Si(Li) X-ray detectors are described and some problems concerning technology and measurement are discussed. The specifications of the detectors are shown as well. The Si(Li) X-ray detector is a kind of low energy X-ray detectors. Owing to very high energy resolution, fine linearity and high detection efficiency in the range of low energy X-rays, it is widely used in the fields of nuclear physics, medicine, geology and environmental protection, etc,. It is also a kernel component for the scanning electron microscope and X-ray fluorescence analysis systems

  10. Three Crystalline Polymorphs of KFeSi04, Potassium Ferrisilicate

    DEFF Research Database (Denmark)

    Bentzen, Janet Jonna

    1983-01-01

    Orthorhombic α-KFeSi04 ( a =0.5478, b =0.9192, c =0.8580 nm), hexagonal β-KFeSiO4 (a =0.5309, c =0.8873 nm), and hexagonal γ-KFeSi04 (a =0.5319, c =0.8815 nm) were synthesized by devitrification of KFeSiO4 glass. Powder X-ray diffraction data are given for all three polymorphs. Alpha KFeSiO4, the......, and synthetic kaliophilite, KAISiO4, respectively, and it is proposed that β- and λ-KFeSiO4 are linked by Si-Fe order-disorder. Beta KFeSiO4 transforms slowly into α-KFeSi04 above 910°C but the transformation was not shown to be reversible in the present dry-heating experiments....

  11. Ag on Si(111) from basic science to application

    Energy Technology Data Exchange (ETDEWEB)

    Belianinov, Aleksey [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-(√3x√3)R30°}–Ag (Ag-Si-√3 hereafter). In this thesis I systematically explore effects of Ag deposition on the Ag-Si-√3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  12. Recent progress in Si thin film technology for solar cells

    Science.gov (United States)

    Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

    1991-11-01

    Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

  13. Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

    Energy Technology Data Exchange (ETDEWEB)

    Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

    2015-04-16

    In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

  14. Revision of the Li13Si4 structure

    Directory of Open Access Journals (Sweden)

    Thomas F. Fässler

    2013-12-01

    Full Text Available Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li–Si system is the phase Li13Si4 (tridecalithium tetrasilicide, the structure of which has been determined previously [Frank et al. (1975. Z. Naturforsch. Teil B, 30, 10–13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i the introduction of a split position for one Li site [occupancy ratio 0.838 (7:0.162 (7], (ii the anisotropic refinement of atomic displacement parameters for all atoms, and (iii a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si–Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si–Si dumbbells at z = 0.5.

  15. Study of astrophysically important resonant states in 26Si by the 28Si(4He,6He)26Si reaction

    Science.gov (United States)

    Kwon, Young Kwan; Lee, C. S.; Moon, J. Y.; Lee, J. H.; Kim, J. Y.; Kubono, S.; Iwasa, N.; Inafiki, K.; Yamaguchi, H.; He, J. J.; Saito, A.; Wakabayashi, Y.; Fukijawa, H.; Amadio, G.; Khiem, L. H.; Tanaka, M.; Chen, A.; Kato, S.

    PoS(NIC-IX)024 , b, H. Yamaguchia, J. J. Hea , A. Saitoa , Y. Wakabayashia, H. Fujikawaa, G. The emission of 1.809 MeV gamma-ray from the first excited state of 26 Mg followed by beta- decay of 26 Al in its ground state (denoted as 26 Alg.s. ) has been identified by gamma-ray telescopes such the Compton Gamma-Ray Observatory (CGRO) [1]. To resolve controversy over the pos- sible sources of the observational 1.809 MeV gamma-rays, one needs accurate knowledge of the production rate of 26 Al. The 25 Al(p,γ)26Si reaction which is the competition reaction for produc- tion of 26 Alg.s. is one of the important subjects to be investigated. In this work, the astrophysically important 26 Si states above the proton threshold were studied via the 28 Si(4 He,6 He)26 Si reaction. We have preformed an angular distribution measurement using the high resolution QDD spectro- graph (PA) at Center for Nuclear Study (CNS), University of Tokyo. The experimental results and data analysis will be presented.

  16. Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

    Science.gov (United States)

    Albani, Marco; Marzegalli, Anna; Bergamaschini, Roberto; Mauceri, Marco; Crippa, Danilo; La Via, Francesco; von Känel, Hans; Miglio, Leo

    2018-05-01

    The exceptionally large thermal strain in few-micrometers-thick 3C-SiC films on Si(111), causing severe wafer bending and cracking, is demonstrated to be elastically quenched by substrate patterning in finite arrays of Si micro-pillars, sufficiently large in aspect ratio to allow for lateral pillar tilting, both by simulations and by preliminary experiments. In suspended SiC patches, the mechanical problem is addressed by finite element method: both the strain relaxation and the wafer curvature are calculated at different pillar height, array size, and film thickness. Patches as large as required by power electronic devices (500-1000 μm in size) show a remarkable residual strain in the central area, unless the pillar aspect ratio is made sufficiently large to allow peripheral pillars to accommodate the full film retraction. A sublinear relationship between the pillar aspect ratio and the patch size, guaranteeing a minimal curvature radius, as required for wafer processing and micro-crack prevention, is shown to be valid for any heteroepitaxial system.

  17. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  18. C and Si delta doping in Ge by CH_3SiH_3 using reduced pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Yamamoto, Yuji; Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Mai, Andreas; Tillack, Bernd

    2016-01-01

    C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH_3SiH_3 is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H_2 or N_2 carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N_2 as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH_3SiH_3 is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H_2 as carrier gas, lower incorporated C is observed in comparison to Si. CH_3SiH_3 injected with H_2 carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N_2 at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH_3SiH_3 exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH_3SiH_3 adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

  19. Slow positron studies of hydrogen activation/passivation on SiO2/Si(100) interfaces

    International Nuclear Information System (INIS)

    Lynn, K.G.; Asoka-Kumar, P.

    1991-01-01

    The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO 2 /Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO 2 /Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO 2 /Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. This study uses the positrons as a ''sensitive'', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. We also describe a new way of characterizing the changes in the density of the interface states under a low-temperature annealing using positrons. 9 refs., 6 figs

  20. Slow positron studies of hydrogen activation/passivation on SiO2/Si(100) interfaces

    Science.gov (United States)

    Lynn, K. G.; Asoka-Kumar, P.

    The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO2/Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO2/Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO2/Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. The positrons are used as a 'sensitive', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. A new way is described of characterizing the changes in the density of the interface states under a low temperature annealing using positrons.