Photonic band structures in one-dimensional photonic crystals containing Dirac materials

International Nuclear Information System (INIS)

Wang, Lin; Wang, Li-Gang

2015-01-01

We have investigated the band structures of one-dimensional photonic crystals (1DPCs) composed of Dirac materials and ordinary dielectric media. It is found that there exist an omnidirectional passing band and a kind of special band, which result from the interaction of the evanescent and propagating waves. Due to the interface effect and strong dispersion, the electromagnetic fields inside the special bands are strongly enhanced. It is also shown that the properties of these bands are invariant upon the lattice constant but sensitive to the resonant conditions

Transmission properties of one-dimensional ternary plasma photonic crystals

International Nuclear Information System (INIS)

Shiveshwari, Laxmi; Awasthi, S. K.

2015-01-01

Omnidirectional photonic band gaps (PBGs) are found in one-dimensional ternary plasma photonic crystals (PPC) composed of single negative metamaterials. The band characteristics and transmission properties are investigated through the transfer matrix method. We show that the proposed structure can trap light in three-dimensional space due to the elimination of Brewster's angle transmission resonance allowing the existence of complete PBG. The results are discussed in terms of incident angle, layer thickness, dielectric constant of the dielectric material, and number of unit cells (N) for TE and TM polarizations. It is seen that PBG characteristics is apparent even in an N ≥ 2 system, which is weakly sensitive to the incident angle and completely insensitive to the polarization. Finite PPC could be used for multichannel transmission filter without introducing any defect in the geometry. We show that the locations of the multichannel transmission peaks are in the allowed band of the infinite structure. The structure can work as a single or multichannel filter by varying the number of unit cells. Binary PPC can also work as a polarization sensitive tunable filter

Transmission properties of one-dimensional ternary plasma photonic crystals

Energy Technology Data Exchange (ETDEWEB)

Shiveshwari, Laxmi [Department of Physics, K. B. Womens' s College, Hazaribagh 825 301 (India); Awasthi, S. K. [Department of Physics and Material Science and Engineering, Jaypee Institute of Information Technology, Noida 201 304 (India)

2015-09-15

Omnidirectional photonic band gaps (PBGs) are found in one-dimensional ternary plasma photonic crystals (PPC) composed of single negative metamaterials. The band characteristics and transmission properties are investigated through the transfer matrix method. We show that the proposed structure can trap light in three-dimensional space due to the elimination of Brewster's angle transmission resonance allowing the existence of complete PBG. The results are discussed in terms of incident angle, layer thickness, dielectric constant of the dielectric material, and number of unit cells (N) for TE and TM polarizations. It is seen that PBG characteristics is apparent even in an N ≥ 2 system, which is weakly sensitive to the incident angle and completely insensitive to the polarization. Finite PPC could be used for multichannel transmission filter without introducing any defect in the geometry. We show that the locations of the multichannel transmission peaks are in the allowed band of the infinite structure. The structure can work as a single or multichannel filter by varying the number of unit cells. Binary PPC can also work as a polarization sensitive tunable filter.

Negative refraction angular characterization in one-dimensional photonic crystals.

Directory of Open Access Journals (Sweden)

Jesus Eduardo Lugo

2011-04-01

Full Text Available Photonic crystals are artificial structures that have periodic dielectric components with different refractive indices. Under certain conditions, they abnormally refract the light, a phenomenon called negative refraction. Here we experimentally characterize negative refraction in a one dimensional photonic crystal structure; near the low frequency edge of the fourth photonic bandgap. We compare the experimental results with current theory and a theory based on the group velocity developed here. We also analytically derived the negative refraction correctness condition that gives the angular region where negative refraction occurs.By using standard photonic techniques we experimentally determined the relationship between incidence and negative refraction angles and found the negative refraction range by applying the correctness condition. In order to compare both theories with experimental results an output refraction correction was utilized. The correction uses Snell's law and an effective refractive index based on two effective dielectric constants. We found good agreement between experiment and both theories in the negative refraction zone.Since both theories and the experimental observations agreed well in the negative refraction region, we can use both negative refraction theories plus the output correction to predict negative refraction angles. This can be very useful from a practical point of view for space filtering applications such as a photonic demultiplexer or for sensing applications.

Negative refraction angular characterization in one-dimensional photonic crystals.

Science.gov (United States)

Lugo, Jesus Eduardo; Doti, Rafael; Faubert, Jocelyn

2011-04-06

Photonic crystals are artificial structures that have periodic dielectric components with different refractive indices. Under certain conditions, they abnormally refract the light, a phenomenon called negative refraction. Here we experimentally characterize negative refraction in a one dimensional photonic crystal structure; near the low frequency edge of the fourth photonic bandgap. We compare the experimental results with current theory and a theory based on the group velocity developed here. We also analytically derived the negative refraction correctness condition that gives the angular region where negative refraction occurs. By using standard photonic techniques we experimentally determined the relationship between incidence and negative refraction angles and found the negative refraction range by applying the correctness condition. In order to compare both theories with experimental results an output refraction correction was utilized. The correction uses Snell's law and an effective refractive index based on two effective dielectric constants. We found good agreement between experiment and both theories in the negative refraction zone. Since both theories and the experimental observations agreed well in the negative refraction region, we can use both negative refraction theories plus the output correction to predict negative refraction angles. This can be very useful from a practical point of view for space filtering applications such as a photonic demultiplexer or for sensing applications.

Two dimensional tunable photonic crystals and n doped semiconductor materials

International Nuclear Information System (INIS)

Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

2015-01-01

In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

Band structure of magneto-metallo-dielectric photonic crystals with hybrid one- and two-dimensional periodicity

Energy Technology Data Exchange (ETDEWEB)

Reyes-Ayona, E. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apartado Postal J-48, Puebla 72570 (Mexico); Instituto Nacional de Astrofisica Optica y Electronica, Apartado Postal 51, Puebla 72000 (Mexico); Halevi, P. [Instituto Nacional de Astrofisica Optica y Electronica, Apartado Postal 51, Puebla 72000 (Mexico)

2012-06-15

We calculate the band structure of a magneto-metallo-dielectric photonic crystal (PC) with hybrid one- and two-dimensional periodicity. Namely, the permittivity (permeability) is periodic in a plane (single direction). The metallic and magnetic properties are described, respectively, by means of the Drude model and a specific permeability model for Barium-M ferrite. Because of the dispersion of both the permeability and the permittivity, we obtain a non-standard eigenvalue problem which is possible to solve by means of a linearization technique. We found that the first band of this PC is very sensitive to the filling fraction of the magnetic component: by changing this fraction from 0.20 to 0.16 the slope - and effective index of refraction - changes from positive to negative. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Semi-analytical model for a slab one-dimensional photonic crystal

Science.gov (United States)

Libman, M.; Kondratyev, N. M.; Gorodetsky, M. L.

2018-02-01

In our work we justify the applicability of a dielectric mirror model to the description of a real photonic crystal. We demonstrate that a simple one-dimensional model of a multilayer mirror can be employed for modeling of a slab waveguide with periodically changing width. It is shown that this width change can be recalculated to the effective refraction index modulation. The applicability of transfer matrix method of reflection properties calculation was demonstrated. Finally, our 1-D model was employed to analyze reflection properties of a 2-D structure - a slab photonic crystal with a number of elliptic holes.

Two-dimensional plasma photonic crystals in dielectric barrier discharge

International Nuclear Information System (INIS)

Fan Weili; Dong Lifang; Zhang Xinchun

2010-01-01

A series of two-dimensional plasma photonic crystals have been obtained by filaments' self-organization in atmospheric dielectric barrier discharge with two water electrodes, which undergo the transition from square to square superlattice and finally to the hexagon. The spatio-temporal behaviors of the plasma photonic crystals in nanosecond scale have been studied by optical method, which show that the plasma photonic crystal is actually an integration of different transient sublattices. The photonic band diagrams of the transverse electric (TE) mode and transverse magnetic mode for each sublattice of these plasma photonic crystals have been investigated theoretically. A wide complete band gap is formed in the hexagonal plasma photonic crystal with the TE mode. The changes of the band edge frequencies and the band gap widths in the evolvement of different structures are studied. A kind of tunable plasma photonic crystal which can be controlled both in space and time is suggested.

Photonic band gap properties of one-dimensional Thue-Morse all-dielectric photonic quasicrystal

Science.gov (United States)

Yue, Chenxi; Tan, Wei; Liu, Jianjun

2018-05-01

In this paper, the photonic band gap (PBG) properties of one-dimensional (1D) Thue-Morse photonic quasicrystal (PQC) S4 structure are theoretically investigated by using transfer matrix method in Bragg condition. The effects of the center wavelength, relative permittivity and incident angle on PBG properties are elaborately analyzed. Numerical results reveal that, in the case of normal incidence, the symmetry and periodicity properties of the photonic band structure are presented. As the center wavelength increases, the PBG center frequency and PBG width decrease while the photonic band structure is always symmetrical about the central frequency and the photonic band structure repeats periodically in the expanding observation frequency range. With the decrease of relative permittivity contrast, the PBG width and the relative PBG width gradually decreases until PBG disappears while the symmetry of the photonic band structure always exists. In the case of oblique incidence, as the incident angle increases, multiple narrow PBGs gradually merge into a wide PBG for the TE mode while for the TM mode, the number of PBG continuously decreases and eventually disappears, i.e., multiple narrow PBGs become a wide passband for the TM mode. The research results will provide a reference for the choice of the material, the incident angle for the PBG properties and its applications of 1D Thue-Morse PQC.

Dispersion relation of electromagnetic waves in one-dimensional plasma photonic crystals

International Nuclear Information System (INIS)

Hojo, Hitoshi; Mase, Atsushi

2004-01-01

The dispersion relation of electromagnetic waves in one-dimensional plasma photonic crystals is studied. The plasma photonic crystal is a periodic array composed of alternating thin plasma and dielectric material. The dispersion relation is obtained by solving a Maxwell wave equation using a method analogous to Kronig-Penny's problem in quantum mechanics, and it is found that the frequency gap and cut-off appear in the dispersion relation. The frequency gap is shown to become larger with the increase of the plasma density as well as plasma width. (author)

Lateral shift in one-dimensional quasiperiodic chiral photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Da, Jian, E-mail: dajian521@sina.com [Department of Information Engineering, Huaian Senior Vocational and Technical School, Feiyao road, Huaian 223005, Jiangsu Province (China); Mo, Qi, E-mail: moqiyueyang@163.com [School of Software, Yunnan University, Cuihu Bai Road, Kunming City, Yunnan Province 650091 (China); Cheng, Yaokun [Department of Information Engineering, Huaian Senior Vocational and Technical School, Feiyao road, Huaian 223005, Jiangsu Province (China); Liu, Taixiang [Taishan Vocational College of Nursing, Shandong Province 271000 (China)

2015-02-01

We investigate the lateral shift of a one-dimensional quasiperiodic photonic crystal consisting of chiral and conventional dielectric materials. The effect of structural irregularity on lateral shift is evaluated by stationary-phase approach. Our results show that the lateral shift can be modulated by varying the structural irregularity in quasiperiodic structure. Besides, the position of peak in lateral shift spectrum stays sensitive to the chiral factor of chiral materials. In comparison with that of periodic structure, quasiperiodic structure provides an extra degree of freedom to manipulate the lateral shift.

Study on the properties of tunable prohibited band gaps for one-dimensional ternary magnetized plasma photonic crystals

International Nuclear Information System (INIS)

Zhang Haifeng; Zheng Jianping; Zhu Rongjun

2012-01-01

The transfer matrix method was applied to study on the properties of tunable prohibited band gaps for one-dimensional ternary magnetized plasma photonic crystals with TE wave arbitrary incident under ideal conditions. TE wave would be divided into left-handed circularly polarized wave and right-handed circularly polarized wave after propagation through one-dimensional ternary magnetized plasma photonic crystals. The calculated transmission coefficients were used to analyze the effects of parameter of plasma, plasma filling factor, incident angle and relative dielectric constant for dielectric layer on the properties of tunable prohibited band gap. The results illustrate that the width of band gaps can not be broadened by increasing plasma collision frequency, the numbers and width of band gaps can be tuned by changing plasma frequency, plasma filling factor and relative dielectric constant for dielectric layer. The band gaps for right-handed circularly polarized wave can be tuned by the plasma gyro frequency, but band gaps for the left-handed circularly polarized wave can't influenced. Low-frequency region of band gaps will be broadened, while high-frequency region of band gaps will be firstly narrow and then broaden with increasing incident angle. (authors)

Omnidirectional photonic band gap enlarged by one-dimensional ternary unmagnetized plasma photonic crystals based on a new Fibonacci quasiperiodic structure

Energy Technology Data Exchange (ETDEWEB)

Zhang Haifeng [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Nanjing Artillery Academy, Nanjing 211132 (China); Liu Shaobin [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); State Key Laboratory of Millimeter Waves of Southeast University, Nanjing Jiangsu 210096 (China); Kong Xiangkun; Bian Borui; Dai Yi [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2012-11-15

In this paper, an omnidirectional photonic band gap realized by one-dimensional ternary unmagnetized plasma photonic crystals based on a new Fibonacci quasiperiodic structure, which is composed of homogeneous unmagnetized plasma and two kinds of isotropic dielectric, is theoretically studied by the transfer matrix method. It has been shown that such an omnidirectional photonic band gap originates from Bragg gap in contrast to zero-n gap or single negative (negative permittivity or negative permeability) gap, and it is insensitive to the incidence angle and the polarization of electromagnetic wave. From the numerical results, the frequency range and central frequency of omnidirectional photonic band gap can be tuned by the thickness and density of the plasma but cease to change with increasing Fibonacci order. The bandwidth of omnidirectional photonic band gap can be notably enlarged. Moreover, the plasma collision frequency has no effect on the bandwidth of omnidirectional photonic band gap. It is shown that such new structure Fibonacci quasiperiodic one-dimensional ternary plasma photonic crystals have a superior feature in the enhancement of frequency range of omnidirectional photonic band gap compared with the conventional ternary and conventional Fibonacci quasiperiodic ternary plasma photonic crystals.

Localized electromagnetic modes and transmission spectrum of one-dimensional photon crystal with lattice defects

CERN Document Server

Vetrov, S Y

2001-01-01

The properties of the localized electromagnetic modes in the one-dimensional photon crystal with a structural defective layer are studied. The anisotropic layer of the nematic liquid layer is considered as the defect. It is shown that the frequency and coefficient of the defective modes attenuation essentially depend on the defective layer thickness and nematic optical axis orientation. The spectrum of the photon crystal transmittance with one or two defects in the lattice is studied. The possibility of controlling the the photon crystal transmittance spectrum on the count of changing the orientation of the nematic optical axis, for example, through the external electric field is shown with an account of strong anisotropy of the dielectric permittivity

One-dimensional photonic crystal design

International Nuclear Information System (INIS)

Mee, Cornelis van der; Contu, Pietro; Pintus, Paolo

2010-01-01

In this article we present a method to determine the band spectrum, band gaps, and discrete energy levels, of a one-dimensional photonic crystal with localized impurities. For one-dimensional crystals with piecewise constant refractive indices we develop an algorithm to recover the refractive index distribution from the period map. Finally, we derive the relationship between the period map and the scattering matrix containing the information on the localized modes.

Selection rule for Dirac-like points in two-dimensional dielectric photonic crystals

KAUST Repository

Li, Yan

2013-01-01

We developed a selection rule for Dirac-like points in two-dimensional dielectric photonic crystals. The rule is derived from a perturbation theory and states that a non-zero, mode-coupling integral between the degenerate Bloch states guarantees a Dirac-like point, regardless of the type of the degeneracy. In fact, the selection rule can also be determined from the symmetry of the Bloch states even without computing the integral. Thus, the existence of Dirac-like points can be quickly and conclusively predicted for various photonic crystals independent of wave polarization, lattice structure, and composition. © 2013 Optical Society of America.

Resonant photon tunneling via surface plasmon polaritons through one-dimensional metal-dielectric metamaterials

OpenAIRE

Tomita, Satoshi; Yokoyama, Takashi; Yanagi, Hisao; Wood, Ben; Pendry, John B.; Fujii, Minoru; Hayashi, Shinji

2008-01-01

We report resonant photon tunneling (RPT) through onedimensional metamaterials consisting of alternating layers of metal and dielectric. RPT via a surface plasmon polariton state permits evanescent light waves with large wavenumbers to be conveyed through the metamaterial. This is the mechanism for sub-wavelength imaging recently demonstrated with a super-lens. Furthermore, we find that the RPT peak is shifted from the reflectance dip with increasing the number of Al layers, indicating that t...

One-Dimensional Photonic Crystal Superprisms

Science.gov (United States)

Ting, David

2005-01-01

Theoretical calculations indicate that it should be possible for one-dimensional (1D) photonic crystals (see figure) to exhibit giant dispersions known as the superprism effect. Previously, three-dimensional (3D) photonic crystal superprisms have demonstrated strong wavelength dispersion - about 500 times that of conventional prisms and diffraction gratings. Unlike diffraction gratings, superprisms do not exhibit zero-order transmission or higher-order diffraction, thereby eliminating cross-talk problems. However, the fabrication of these 3D photonic crystals requires complex electron-beam substrate patterning and multilayer thin-film sputtering processes. The proposed 1D superprism is much simpler in structural complexity and, therefore, easier to design and fabricate. Like their 3D counterparts, the 1D superprisms can exhibit giant dispersions over small spectral bands that can be tailored by judicious structure design and tuned by varying incident beam direction. Potential applications include miniature gas-sensing devices.

Electromagnetically induced reflectance and Fano resonance in one dimensional superconducting photonic crystal

Science.gov (United States)

Athe, Pratik; Srivastava, Sanjay; Thapa, Khem B.

2018-04-01

In the present work, we demonstrate the generation of optical Fano resonance and electromagnetically induced reflectance (EIR) in one-dimensional superconducting photonic crystal (1D SPC) by numerical simulation using transfer matrix method as analysis tool. We investigated the optical response of 1D SPC structure consisting of alternate layer of two different superconductors and observed that the optical spectra of this structure exhibit two narrow reflectance peaks with zero reflectivity of sidebands. Further, we added a dielectric cap layer to this 1D SPC structure and found that addition of dielectric cap layer transforms the line shape of sidebands around the narrow reflectance peaks which leads to the formation of Fano resonance and EIR line shape in reflectance spectra. We also studied the effects of the number of periods, refractive index and thickness of dielectric cap layer on the lineshape of EIR and Fano resonances. It was observed that the amplitude of peak reflectance of EIR achieves 100% reflectance by increasing the number of periods.

Wideband absorption in one dimensional photonic crystal with graphene-based hyperbolic metamaterials

Science.gov (United States)

Kang, Yongqiang; Liu, Hongmei

2018-02-01

A broadband absorber which was proposed by one dimensional photonic crystal (1DPC) containing graphene-based hyperbolic metamaterials (GHMM) is theoretically investigated. For TM mode, it was demonstrated to absorb roughly 90% of all available electromagnetic waves at a 14 THz absorption bandwidth at normal incidence. The absorption bandwidth was affected by Fermi energy and thickness of dielectric layer. When the incident angle was increased, the absorption value decreased, and the absorption band had a gradual blue shift. These findings have potential applications for designing broadband optoelectronic devices at mid-infrared and THz frequency range.

Geometrically distributed one-dimensional photonic crystals for light-reflection in all angles.

Science.gov (United States)

Alagappan, G; Wu, P

2009-07-06

We demonstrate that a series of one-dimensional photonic crystals made of any dielectric materials, with the periods are distributed in a geometrical progression of a common ratio, r rc (theta,P), where rc is a structural parameter that depends on the angle of incidence, theta, and polarization, P, is capable of blocking light of any spectral range. If an omni-directional reflection is desired for all polarizations and for all incident angles smaller than thetao, then r rc (theta(o),p), where p is the polarization with the electric field parallel to the plane of incidence. We present simple and formula like expressions for rc, width of the bandgap, and minimum number of photonic crystals to achieve a perfect light reflection.

Effect of shape of scatterers and plasma frequency on the complete photonic band gap properties of two-dimensional dielectric-plasma photonic crystals

Energy Technology Data Exchange (ETDEWEB)

Fathollahi Khalkhali, T., E-mail: tfathollahi@aeoi.org.ir; Bananej, A.

2016-12-16

In this study, we analyze complete photonic band gap properties of two-dimensional dielectric-plasma photonic crystals with triangular and square lattices, composed of plasma rods with different geometrical shapes in the anisotropic tellurium background. Using the finite-difference time-domain method we discuss the maximization of the complete photonic band gap width as a function of plasma frequency and plasma rods parameters with different shapes and orientations. The numerical results demonstrate that our proposed structures represent significantly wide complete photonic band gaps in comparison to previously studied dielectric-plasma photonic crystals. - Highlights: • In this paper, we have investigated plasma photonic crystals. • Plasma is a kind of dispersive medium with its equivalent refractive index related to the frequency of an incident EM wave. • In this work, our simulations are performed using the Meep implementation of the finite-difference time-domain (FDTD) method. • For this study, the lattice structures investigated are triangular and square. • Extensive calculations reveal that almost all of these structures represent wide complete band gaps.

Effect of shape of scatterers and plasma frequency on the complete photonic band gap properties of two-dimensional dielectric-plasma photonic crystals

International Nuclear Information System (INIS)

Fathollahi Khalkhali, T.; Bananej, A.

2016-01-01

In this study, we analyze complete photonic band gap properties of two-dimensional dielectric-plasma photonic crystals with triangular and square lattices, composed of plasma rods with different geometrical shapes in the anisotropic tellurium background. Using the finite-difference time-domain method we discuss the maximization of the complete photonic band gap width as a function of plasma frequency and plasma rods parameters with different shapes and orientations. The numerical results demonstrate that our proposed structures represent significantly wide complete photonic band gaps in comparison to previously studied dielectric-plasma photonic crystals. - Highlights: • In this paper, we have investigated plasma photonic crystals. • Plasma is a kind of dispersive medium with its equivalent refractive index related to the frequency of an incident EM wave. • In this work, our simulations are performed using the Meep implementation of the finite-difference time-domain (FDTD) method. • For this study, the lattice structures investigated are triangular and square. • Extensive calculations reveal that almost all of these structures represent wide complete band gaps.

Optical properties of mesoporous photonic crystals, filled with dielectrics, ferroelectrics and piezoelectrics

Directory of Open Access Journals (Sweden)

V. S. Gorelik

2017-12-01

Full Text Available At present, it is very important to create new types of mirrors, nonlinear light frequency transformers and optical filters with controlled optical properties. In this connection, it is of great interest to study photonic crystals. Their dielectric permittivity varies periodically in space with a period permitting Bragg diffraction of light. In this paper, we have investigated the optical properties of mesoporous three-dimensional (3D opal-type and one-dimensional (1D anodic alumina photonic crystals, filled with different dielectrics, ferroelectrics and piezoelectrics. We have compared the optical properties of initial mesoporous photonic crystals and filled with different substances. The possibility of mesoporous photonic crystals using selective narrow-band light filters in Raman scattering experiments and nonlinear mirrors has been analyzed. The electromagnetic field enhancing in the case of exciting light frequency close to the stop band edges has been established. The optical harmonics and subharmonics generation in mesoporous crystals, filled with ferroelectrics and piezoelectrics was proposed.

Study on the Reflection Spectra of One Dimensional Plasma Photonic Crystals Having Exponentially Graded Materials

International Nuclear Information System (INIS)

Prasad, S.; Singh, Vivek; Singh, A. K.

2013-01-01

The transfer matrix method is used to study the effect of the permittivity profile on the reflectivity of a one dimensional plasma photonic crystal having exponentially graded material. The analysis shows that the proposed structure works as a perfect mirror within a certain frequency range. These frequency ranges can be completely controlled by the permittivity profile of a graded dielectric layer. As expected we observed that these frequency ranges are also controlled by plasma parameters. (plasma technology)

Two-Dimentional Photonic Crystal Waveguides

DEFF Research Database (Denmark)

Søndergaard, Thomas; Dridi, Kim

1999-01-01

possible a novel class of optical microcavities, whereas line defects make possible a novel class of waveguides. In this paper we will analyze two-dimensional photonic crystal waveguides based on photonic crystals with rods arranged on a triangular and a square lattice using a plane-wave expansion method......In the recent years a new class of periodic high-index contrast dielectric structures, known as photonic bandgap structures, has been discovered. In these structures frequency intervals, known as photonic bandgaps, where propagation of electromagnetic waves is not allowed, exist due to the periodic...... dielectric function. This is analogous to semiconductors, where electronic bandgaps exist due to the periodic arrangement of atoms. As is also the case for semiconductor structures, photonic bandgap structures may become of even greater value when defects are introduced. In particular, point defects make...

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Effect of background dielectric on TE-polarized photonic bandgap of metallodielectric photonic crystals using Dirichlet-to-Neumann map method.

Science.gov (United States)

Sedghi, Aliasghar; Rezaei, Behrooz

2016-11-20

Using the Dirichlet-to-Neumann map method, we have calculated the photonic band structure of two-dimensional metallodielectric photonic crystals having the square and triangular lattices of circular metal rods in a dielectric background. We have selected the transverse electric mode of electromagnetic waves, and the resulting band structures showed the existence of photonic bandgap in these structures. We theoretically study the effect of background dielectric on the photonic bandgap.

Transition from two-dimensional photonic crystals to dielectric metasurfaces in the optical diffraction with a fine structure

Science.gov (United States)

Rybin, Mikhail V.; Samusev, Kirill B.; Lukashenko, Stanislav Yu.; Kivshar, Yuri S.; Limonov, Mikhail F.

2016-01-01

We study experimentally a fine structure of the optical Laue diffraction from two-dimensional periodic photonic lattices. The periodic photonic lattices with the C4v square symmetry, orthogonal C2v symmetry, and hexagonal C6v symmetry are composed of submicron dielectric elements fabricated by the direct laser writing technique. We observe surprisingly strong optical diffraction from a finite number of elements that provides an excellent tool to determine not only the symmetry but also exact number of particles in the finite-length structure and the sample shape. Using different samples with orthogonal C2v symmetry and varying the lattice spacing, we observe experimentally a transition between the regime of multi-order diffraction, being typical for photonic crystals to the regime where only the zero-order diffraction can be observed, being is a clear fingerprint of dielectric metasurfaces characterized by effective parameters. PMID:27491952

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

Directory of Open Access Journals (Sweden)

Katsuaki Tanabe

2009-07-01

Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

Single-photon switch: Controllable scattering of photons inside a one-dimensional resonator waveguide

Science.gov (United States)

Zhou, L.; Gong, Z. R.; Liu, Y. X.; Sun, C. P.; Nori, F.

2010-03-01

We analyze the coherent transport of a single photon, which propagates in a one-dimensional coupled-resonator waveguide and is scattered by a controllable two-level system located inside one of the resonators of this waveguide. Our approach, which uses discrete coordinates, unifies low and high energy effective theories for single-photon scattering. We show that the controllable two-level system can behave as a quantum switch for the coherent transport of a single photon. This study may inspire new electro-optical single-photon quantum devices. We also suggest an experimental setup based on superconducting transmission line resonators and qubits. References: L. Zhou, Z.R. Gong, Y.X. Liu, C.P. Sun, F. Nori, Controllable scattering of photons inside a one-dimensional resonator waveguide, Phys. Rev. Lett. 101, 100501 (2008). L. Zhou, H. Dong, Y.X. Liu, C.P. Sun, F. Nori, Quantum super-cavity with atomic mirrors, Phys. Rev. A 78, 063827 (2008).

Observation of large photonic band gaps and defect modes in one-dimensional networked waveguides

CERN Document Server

Mir, A; Vasseur, J O; Djafari-Rouhani, B; Fettouhi, N; Boudouti, E H E; Dobrzynski, L; Zemmouri, J

2003-01-01

The photonic band structures and transmission spectra of serial loop structures (SLSs), made of loops pasted together with segments of finite length, are investigated experimentally and theoretically. These monomode structures, composed of one-dimensional dielectric materials, may exhibit large stop bands where the propagation of electromagnetic waves is forbidden. The width of these band gaps depends on the geometrical and compositional parameters of the structure and may be drastically increased in a tandem geometry made up of several successive SLSs which differ in their physical characteristics. These SLSs may have potential applications as ultrawide-band filters.

Broadband slow light in one-dimensional logically combined photonic crystals.

Science.gov (United States)

Alagappan, G; Png, C E

2015-01-28

Here, we demonstrate the broadband slow light effects in a new family of one dimensional photonic crystals, which are obtained by logically combining two photonic crystals of slightly different periods. The logical combination slowly destroys the original translational symmetries of the individual photonic crystals. Consequently, the Bloch modes of the individual photonic crystals with different wavevectors couple with each other, creating a vast number of slow modes. Specifically, we describe a photonic crystal architecture that results from a logical "OR" mixture of two one dimensional photonic crystals with a periods ratio of r = R/(R - 1), where R > 2 is an integer. Such a logically combined architecture, exhibits a broad region of frequencies in which a dense number of slow modes with varnishing group velocities, appear naturally as Bloch modes.

Circular dichroism in a three-dimensional semiconductor chiral photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Takahashi, S.; Ota, Y.; Tatebayashi, J. [Institute of Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Tajiri, T. [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Iwamoto, S.; Arakawa, Y. [Institute of Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-08-04

Circular dichroism covering the telecommunication band is experimentally demonstrated in a semiconductor-based three-dimensional chiral photonic crystal (PhC). We design a rotationally stacked woodpile PhC structure where neighboring layers are rotated by 60° and three layers construct a single helical unit. The mirror-asymmetric PhC made from GaAs with sub-micron periodicity is fabricated by a micro-manipulation technique. Due to the large contrast of refractive indices between GaAs and air, the experimentally obtained circular dichroism extends over a wide wavelength range, with the transmittance of right-handed circularly polarized incident light being 85% and that of left-handed light being 15% at a wavelength of 1.3 μm. The obtained results show good agreement with numerical simulations.

Two-dimensionally confined topological edge states in photonic crystals

International Nuclear Information System (INIS)

Barik, Sabyasachi; Miyake, Hirokazu; DeGottardi, Wade; Waks, Edo; Hafezi, Mohammad

2016-01-01

We present an all-dielectric photonic crystal structure that supports two-dimensionally confined helical topological edge states. The topological properties of the system are controlled by the crystal parameters. An interface between two regions of differing band topologies gives rise to topological edge states confined in a dielectric slab that propagate around sharp corners without backscattering. Three-dimensional finite-difference time-domain calculations show these edges to be confined in the out-of-plane direction by total internal reflection. Such nanoscale photonic crystal architectures could enable strong interactions between photonic edge states and quantum emitters. (paper)

Photonic density of states of two-dimensional quasicrystalline photonic structures

International Nuclear Information System (INIS)

Jia Lin; Bita, Ion; Thomas, Edwin L.

2011-01-01

A large photonic band gap (PBG) is highly favorable for photonic crystal devices. One of the most important goals of PBG materials research is identifying structural design strategies for maximizing the gap size. We provide a comprehensive analysis of the PBG properties of two-dimensional (2D) quasicrystals (QCs), where rotational symmetry, dielectric fill factor, and structural morphology were varied systematically in order to identify correlations between structure and PBG width at a given dielectric contrast (13:1, Si:air). The transverse electric (TE) and transverse magnetic (TM) PBGs of 12 types of QCs are investigated (588 structures). We discovered a 12mm QC with a 56.5% TE PBG, the largest reported TE PBG for an aperiodic crystal to date. We also report here a QC morphology comprising ''throwing star''-like dielectric domains, with near-circular air cores and interconnecting veins emanating radially around the core. This interesting morphology leads to a complete PBG of ∼20% , which is the largest reported complete PBG for aperiodic crystals.

Strongly-Refractive One-Dimensional Photonic Crystal Prisms

Science.gov (United States)

Ting, David Z. (Inventor)

2004-01-01

One-dimensional (1D) photonic crystal prisms can separate a beam of polychromatic electromagnetic waves into constituent wavelength components and can utilize unconventional refraction properties for wavelength dispersion over significant portions of an entire photonic band rather than just near the band edges outside the photonic band gaps. Using a ID photonic crystal simplifies the design and fabrication process and allows the use of larger feature sizes. The prism geometry broadens the useful wavelength range, enables better optical transmission, and exhibits angular dependence on wavelength with reduced non-linearity. The properties of the 1 D photonic crystal prism can be tuned by varying design parameters such as incidence angle, exit surface angle, and layer widths. The ID photonic crystal prism can be fabricated in a planar process, and can be used as optical integrated circuit elements.

The method of impedance transformation for electromagnetic waves propagating in one-dimension plasma photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Yao, Jingfeng; Yuan, Chengxun, E-mail: yuancx@hit.edu.cn, E-mail: zhouzx@hit.edu.cn; Gao, Ruilin; Jia, Jieshu; Wang, Ying; Zhou, Zhongxiang, E-mail: yuancx@hit.edu.cn, E-mail: zhouzx@hit.edu.cn; Wang, Xiaoou [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Wu, Jian [National Key Laboratory of Electromagnetic Environment (LEME), China Research Institute of Radio Wave Propagation, Beijing 102206 (China); Li, Hui [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); National Key Laboratory of Electromagnetic Environment (LEME), China Research Institute of Radio Wave Propagation, Beijing 102206 (China)

2016-08-15

This study focuses on the transmission of normal-incidence electromagnetic waves in one-dimensional plasma photonic crystals. Using the Maxwell's equations in a medium, a method that is based on the concept of impendence is employed to perform the simulation. The accuracy of the method was evaluated by simulating a one-layer plasma and conventional photonic crystal. In frequency-domain, the transmission and reflection coefficients in the unmagnetized plasma photonic crystal were calculated, and the influence factors on plasma photonic crystals including dielectric constants of dielectric, spatial period, filling factor, plasma frequency, and collision frequency were studied.

Black phosphorus-based one-dimensional photonic crystals and microcavities.

Science.gov (United States)

Kriegel, Ilka; Toffanin, Stefano; Scotognella, Francesco

2016-11-10

The latest achievements in the fabrication of thin layers of black phosphorus (BP), toward the technological breakthrough of a phosphorene atomically thin layer, are paving the way for their use in electronics, optics, and optoelectronics. In this work, we have simulated the optical properties of one-dimensional photonic structures, i.e., photonic crystals and microcavities, in which few-layer BP is one of the components. The insertion of the 5-nm black phosphorous layers leads to a photonic band gap in the photonic crystals and a cavity mode in the microcavity that is interesting for light manipulation and emission enhancement.

Three-dimensional function photonic crystals

Science.gov (United States)

Zhang, Hai-Feng

2017-11-01

In this paper, the properties of the photonic band gaps (PBGs) of three-dimensional (3D) function photonic crystals (PCs) are theoretically investigated by a modified plane wave expansion (PWE) method, whose equations for computations are deduced. The configuration of 3D function PCs is the dielectric spheres inserted in the air background with simple-cubic (SC) lattices whose dielectric constants are the functions of space coordinates, which can be realized by the electro-optical or optical Kerr effect in the practice. The influences of the parameter for 3D function PCs on the PBGs also are discussed. The calculated results show that the bandwidths and number of PBGs can be tuned with different distributions of function dielectrics. Compared with the conventional 3D dielectric PCs with SC lattices, the larger and more PBGs can be obtained in the 3D function PCs. Those results provide a new way to design the novel practical devices.

Omnidirectional reflection in one-dimensional ternary photonic crystals and photonic heterostructures

Energy Technology Data Exchange (ETDEWEB)

Wang, Shiqi [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631 (China); Yang, Xiangbo, E-mail: 20001038@m.scnu.edu.cn [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631 (China); School of Physical Education and Sports Science, South China Normal University, Guangzhou 510006 (China); Liu, Chengyi Timon [School of Physical Education and Sports Science, South China Normal University, Guangzhou 510006 (China)

2014-03-01

Designing dielectric systems to create omnidirectional band gaps (OBGs) is an attractive topic in the field of photonic band gap (PBG) structures. In this Letter, we propose a new approach to create OBGs by ternary photonic heterostructures (TPHs) composed of three kinds of materials with different refractive indices and obtain the formulae of the structures of TPHs, i.e., those of the thicknesses of materials and the number of sub-ternary photonic crystals. It may provide a powerful technique for designing the structures being able to produce OBGs by use of usual materials, lowcost materials, and materials with low refractive indices, etc.

Omnidirectional reflection in one-dimensional ternary photonic crystals and photonic heterostructures

International Nuclear Information System (INIS)

Wang, Shiqi; Yang, Xiangbo; Liu, Chengyi Timon

2014-01-01

Designing dielectric systems to create omnidirectional band gaps (OBGs) is an attractive topic in the field of photonic band gap (PBG) structures. In this Letter, we propose a new approach to create OBGs by ternary photonic heterostructures (TPHs) composed of three kinds of materials with different refractive indices and obtain the formulae of the structures of TPHs, i.e., those of the thicknesses of materials and the number of sub-ternary photonic crystals. It may provide a powerful technique for designing the structures being able to produce OBGs by use of usual materials, lowcost materials, and materials with low refractive indices, etc.

Semiconductor Three-Dimensional Photonic Crystals with Novel Layer-by-Layer Structures

Directory of Open Access Journals (Sweden)

Satoshi Iwamoto

2016-05-01

Full Text Available Three-dimensional photonic crystals (3D PhCs are a fascinating platform for manipulating photons and controlling their interactions with matter. One widely investigated structure is the layer-by-layer woodpile structure, which possesses a complete photonic bandgap. On the other hand, other types of 3D PhC structures also offer various possibilities for controlling light by utilizing the three dimensional nature of structures. In this article, we discuss our recent research into novel types of layer-by-layer structures, including the experimental demonstration of a 3D PhC nanocavity formed in a <110>-layered diamond structure and the realization of artificial optical activity in rotationally stacked woodpile structures.

Ultra-refractive and extended-range one-dimensional photonic crystal superprisms

Science.gov (United States)

Ting, D. Z. Y.

2003-01-01

We describe theoretical analysis and design of one-dimensional photonic crystal prisms. We found that inside the photonic crystal, for frequencies near the band edges, light propagation direction is extremely sensitive to the variations in wavelength and incident angle.

Extended-Range Ultrarefractive 1D Photonic Crystal Prisms

Science.gov (United States)

Ting, David Z.

2007-01-01

A proposal has been made to exploit the special wavelength-dispersive characteristics of devices of the type described in One-Dimensional Photonic Crystal Superprisms (NPO-30232) NASA Tech Briefs, Vol. 29, No. 4 (April 2005), page 10a. A photonic crystal is an optical component that has a periodic structure comprising two dielectric materials with high dielectric contrast (e.g., a semiconductor and air), with geometrical feature sizes comparable to or smaller than light wavelengths of interest. Experimental superprisms have been realized as photonic crystals having three-dimensional (3D) structures comprising regions of amorphous Si alternating with regions of SiO2, fabricated in a complex process that included sputtering. A photonic crystal of the type to be exploited according to the present proposal is said to be one-dimensional (1D) because its contrasting dielectric materials would be stacked in parallel planar layers; in other words, there would be spatial periodicity in one dimension only. The processes of designing and fabricating 1D photonic crystal superprisms would be simpler and, hence, would cost less than do those for 3D photonic crystal superprisms. As in 3D structures, 1D photonic crystals may be used in applications such as wavelength-division multiplexing. In the extended-range configuration, it is also suitable for spectrometry applications. As an engineered structure or artificially engineered material, a photonic crystal can exhibit optical properties not commonly found in natural substances. Prior research had revealed several classes of photonic crystal structures for which the propagation of electromagnetic radiation is forbidden in certain frequency ranges, denoted photonic bandgaps. It had also been found that in narrow frequency bands just outside the photonic bandgaps, the angular wavelength dispersion of electromagnetic waves propagating in photonic crystal superprisms is much stronger than is the angular wavelength dispersion obtained

Optical properties of a defective one-dimensional photonic crystal containing graphene nanaolayers

International Nuclear Information System (INIS)

Entezar, S. Roshan; Saleki, Z.; Madani, A.

2015-01-01

The transmission properties of a defective one-dimensional photonic crystal containing graphene nanolayers have been investigated using the transfer matrix method. It is shown that two kinds of the defect modes can be found in the band gaps of the structure. One kind is the traditional defect mode which is created in the Bragg gaps of the structure and is due to the breaking of the periodicity of the dielectric lattice. The other one is created in the graphene induced band gap. Such a defect mode which we call it the graphene induced defect mode is due to the breaking of the periodicity of the graphene lattice. However, our investigations reveal that only in the case of wide defect layers one can obtain the graphene induced defect modes. The effects of many parameters such as the incident angle, the state of polarization and the chemical potential of the graphene nanolayers on the properties of the graphene induced defect modes are discussed. Moreover, the possibility of external control of the graphene induced defect modes using a gate voltage is shown.

Surface and Interface Engineering of Organometallic and Two Dimensional Semiconductor

Science.gov (United States)

Park, Jun Hong

For over half a century, inorganic Si and III-V materials have led the modern semiconductor industry, expanding to logic transistor and optoelectronic applications. However, these inorganic materials have faced two different fundamental limitations, flexibility for wearable applications and scaling limitation as logic transistors. As a result, the organic and two dimensional have been studied intentionally for various fields. In the present dissertation, three different studies will be presented with followed order; (1) the chemical response of organic semiconductor in NO2 exposure. (2) The surface and stability of WSe2 in ambient air. (3) Deposition of dielectric on two dimensional materials using organometallic seeding layer. The organic molecules rely on the van der Waals interaction during growth of thin films, contrast to covalent bond inorganic semiconductors. Therefore, the morphology and electronic property at surface of organic semiconductor in micro scale is more sensitive to change in gaseous conditions. In addition, metal phthalocyanine, which is one of organic semiconductor materials, change their electronic property as reaction with gaseous analytes, suggesting as potential chemical sensing platforms. In the present part, the growth behavior of metal phthalocyanine and surface response to gaseous condition will be elucidated using scanning tunneling microscopy (STM). In second part, the surface of layered transition metal dichalcogenides and their chemical response to exposure ambient air will be investigated, using STM. Layered transition metal dichalcogenides (TMDs) have attracted widespread attention in the scientific community for electronic device applications because improved electrostatic gate control and suppression of short channel leakage resulted from their atomic thin body. To fabricate the transistor based on TMDs, TMDs should be exposed to ambient conditions, while the effect of air exposure has not been understood fully. In this part

Photon-exchange energy transfer of an electron–hole plasma between quasi-two-dimensional semiconductor layers

International Nuclear Information System (INIS)

Lyo, S.K.

2012-01-01

Photon-mediated energy transfer is shown to play an important role for transfer of an electron–hole plasma between two quasi-two-dimensional quantum wells separated by a wide barrier. The magnitude and the dependence of the transfer rate of an electron–hole plasma on the temperature, the well-to-well distance, and the plasma density are compared with those of the standard Förster (i.e., dipolar) rate and also with the exciton transfer rate. The plasma transfer rate through the photon-exchange mechanism decays very slowly as a function of the well-to-well distance and is larger than the dipolar rate except for short distances. The transfer rate of plasmas saturates at high densities and decays rapidly with the temperature. - Highlights: ► We study energy transfer (ET) between two two-dimensional semiconductor quantum wells. ► We compare the ET rates of an electron–hole plasma (at a high density) and Mott excitons. ► We show that the proposed photon-exchange rate is practically dominant over the Förster rate. ► We examine the dependences of the ET rate on the temperature, density, and well-to-well distance.

One-Dimensional Tunable Photonic-Crystal IR Filter, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — MetroLaser proposes to design and develop an innovative narrowband tunable IR filter based on the properties of a one-dimensional photonic crystal structure with a...

One-Dimensional Tunable Photonic-Crystal IR Filter, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — MetroLaser proposes to design and develop an innovative narrowband tunable IR filter based on the properties of a one-dimensional photonic crystal structure with a...

One-dimensional photonic crystals with highly Bi-substituted iron garnet defect in reflection polar geometry

International Nuclear Information System (INIS)

Mikhailova, T V; Berzhansky, V N; Karavainikov, A V; Shaposhnikov, A N; Prokopov, A R; Lyashko, S D

2016-01-01

It is represented the results of modelling of magnetooptical properties in reflection polar geometry of one-dimensional photonic crystal, in which highly Bi-substituted iron garnet defect of composition Bi 1.0 Y 0.5 Gd 1.5 Fe 4.2 A l0.8 O 12 / Bi 2.8 Y 0.2 Fe 5 Oi 2 is located between the dielectric Bragg mirrors (SiO 2 / TiO 2 ) m (were m is number of layer pairs) and buffer SiO 2 and gold top layers of different thicknesses is placed on structure. The modification of spectral line- shapes of microcavity and Tamm plasmon-polariton modes depending on m is found. (paper)

Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals

Energy Technology Data Exchange (ETDEWEB)

Usanov, D. A., E-mail: UsanovDA@info.sgu.ru [Chernyshevsky National Research State University (Russian Federation); Nikitov, S. A. [Russian Academy of Sciences, Kotelnikov Institute of Radio Engineering and Electronics (Russian Federation); Skripal, A. V.; Ponomarev, D. V.; Latysheva, E. V. [Chernyshevsky National Research State University (Russian Federation)

2016-12-15

A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n{sup +} layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.

Three dimensional strained semiconductors

Science.gov (United States)

Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

2016-11-08

In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

Optical properties of crystalline semiconductors and dielectrics

International Nuclear Information System (INIS)

Forouhi, A.R.; Bloomer, I.

1988-01-01

A new formulation for the complex index of refraction, N(E) = n(E)-ik(E), as a function of photon energy E, for crystalline semiconductors and dielectrics is developed based on our previous derivation of N(E) for amorphous materials. The extinction coefficient k(E) is deduced from a one-electron model with finite lifetime for the excited electron state. The refractive index n(E) is then derived from the Kramers-Kronig relation as the Hilbert transform of k(E). It is shown that n(∞)>1. Excellent agreement is found between our equations for n(E) and k(E) and published measured values for crystalline Si, Ge, GaP, GaAs, GaSb, InP, InAs, InSb, SiC, cubic C, and α-SiO 2 , over a wide range of energies (∼0--20 eV). Far fewer parameters, all of which have physical significance, are required and they can be determined for a particular material from the position and strength of the peaks in the k spectrum

The electromagnetic Brillouin precursor in one-dimensional photonic crystals

NARCIS (Netherlands)

Uitham, R.; Hoenders, B. J.

2008-01-01

We have calculated the electromagnetic Brillouin precursor that arises in a one-dimensional photonic crystal that consists of two homogeneous slabs which each have a single electron resonance. This forerunner is compared with the Brillouin precursor that arises in a homogeneous double-electron

One-way quantum computation with four-dimensional photonic qudits

International Nuclear Information System (INIS)

Joo, Jaewoo; Knight, Peter L.; O'Brien, Jeremy L.; Rudolph, Terry

2007-01-01

We consider the possibility of performing linear optical quantum computations making use of extra photonic degrees of freedom. In particular, we focus on the case where we use photons as quadbits, four-dimensional photonic qudits. The basic 2-quadbit cluster state is a hyperentangled state across polarization and two spatial mode degrees of freedom. We examine the nondeterministic methods whereby such states can be created from single photons and/or Bell pairs and then give some mechanisms for performing higher-dimensional fusion gates

Analysis of light propagation in quasiregular and hybrid Rudin-Shapiro one-dimensional photonic crystals with superconducting layers

Science.gov (United States)

Gómez-Urrea, H. A.; Escorcia-García, J.; Duque, C. A.; Mora-Ramos, M. E.

2017-11-01

The transmittance spectrum of a one-dimensional hybrid photonic crystal built from the suitable arrangement of periodic and quasiregular Rudin-Shapiro heterolayers that include superconducting slabs is investigated. The four-layer Rudin-Shapiro structure is designed with three lossless dielectric layers and a low-temperature superconductor one. The dielectric function of the superconducting layer is modeled by the two-fluid Gorter-Casimir theory, and the transmittance is calculated with the use of the transfer matrix method. The obtained results reveal the presence of a cut-off frequency fc - a forbidden frequency band for propagation - that can be manipulated by changing the width of the superconducting layer, the temperature and the order of the Rudin-Shapiro sequence. In addition, the spatial distribution of the electric field amplitude for the propagating TM modes is also discussed. It is found that the maximum of localized electric field relative intensity - which reaches a value of several tens - corresponds to the frequency values above to the cut-off frequency, at which, the effective dielectric function of the hybrid unit cell becomes zero. The proposed structure could be another possible system for optical device design for temperature-dependent optical devices such as stop-band filters, or as bolometers.

Amplifying and compressing optical filter based on one-dimensional ternary photonic crystal structure containing gain medium

Science.gov (United States)

Jamshidi-Ghaleh, Kazem; Ebrahimpour, Zeinab; Moslemi, Fatemeh

2015-07-01

The transmission spectrum properties of the one-dimensional ternary photonic crystal (1DTPC) structure, composed of dielectric (D), metal (M) and gain (G) materials, with three different arrangements of (DGM)N, (GDM)N and (DMG)N, where N is the number of periodicity, were investigated. Two full photonic band gaps and N-1 resonant peaks, localized between them, were observed on transmittance spectra on near-UV spectrum region. When the gained layer was placed in front of the metal, the peaks appeared with higher resolution. There is a peak, localized on the higher band-edge of the first gap, which shows very interesting property than the other peaks. Thus, it amplifies and compresses faster with increase in the N and strength of the gain coefficient. The effects of the gain coefficient and periodicity number are graphically illustrated. This communication presents a PC structure that can be a good candidate to design an amplifying and compressing single or multi-channel optical filter in the UV region.

Tamm-plasmon polaritons in one-dimensional photonic quasi-crystals.

Science.gov (United States)

Shukla, Mukesh Kumar; Das, Ritwick

2018-02-01

We present an investigation to ascertain the existence of Tamm-plasmon-polariton-like modes in one-dimensional (1D) quasi-periodic photonic systems. Photonic bandgap formation in quasi-crystals is essentially a consequence of long-range periodicity exhibited by multilayers and, thus, it can be explained using the dispersion relation in the Brillouin zone. Defining a "Zak"-like topological phase in 1D quasi-crystals, we propose a recipe to ascertain the existence of Tamm-like photonic surface modes in a metal-terminated quasi-crystal lattice. Additionally, we also explore the conditions of efficient excitation of such surface modes along with their dispersion characteristics.

Controllable scattering of photons in a one-dimensional resonator waveguide

Science.gov (United States)

Sun, C. P.; Zhou, L.; Gong, Z. R.; Liu, Y. X.; Nori, F.

2009-03-01

We analyze the coherent transport of a single photon, which propagates in a one-dimensional coupled-resonator waveguide and is scattered by a controllable two-level system located inside one of the resonators of this waveguide. Our approach, which uses discrete coordinates, unifies low and high energy effective theories for single-photon scattering. We show that the controllable two-level system can behave as a quantum switch for the coherent transport of a single photon. This study may inspire new electro-optical single-photon quantum devices. We also suggest an experimental setup based on superconducting transmission line resonators and qubits. [4pt] L. Zhou, Z.R. Gong, Y.X. Liu, C.P. Sun, F. Nori, Controllable scattering of photons in a 1D resonator waveguide, Phys. Rev. Lett. 101, 100501 (2008). URL: http://link.aps.org/abstract/PRL/v101/e100501

Stopping single photons in one-dimensional circuit quantum electrodynamics systems

International Nuclear Information System (INIS)

Shen, J.-T.; Povinelli, M. L.; Sandhu, Sunil; Fan Shanhui

2007-01-01

We propose a mechanism to stop and time reverse single photons in one-dimensional circuit quantum electrodynamics systems. As a concrete example, we exploit the large tunability of the superconducting charge quantum bit (charge qubit) to predict one-photon transport properties in multiple-qubit systems with dynamically controlled transition frequencies. In particular, two qubits coupled to a waveguide give rise to a single-photon transmission line shape that is analogous to electromagnetically induced transparency in atomic systems. Furthermore, by cascading double-qubit structures to form an array and dynamically controlling the qubit transition frequencies, a single photon can be stopped, stored, and time reversed. With a properly designed array, two photons can be stopped and stored in the system at the same time. Moreover, the unit cell of the array can be designed to be of deep subwavelength scale, miniaturizing the circuit

Parameterization of the dielectric function of semiconductor nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Petrik, P., E-mail: petrik@mfa.kfki.hu

2014-11-15

Optical methods like spectroscopic ellipsometry are sensitive to the structural properties of semiconductor films such as crystallinity or grain size. The imaginary part of the dielectric function is proportional to the joint density of electronic states. Consequently, the analysis of the dielectric function around the critical point energies provides useful information about the electron band structure and all related parameters like the grain structure, band gap, temperature, composition, phase structure, and carrier mobility. In this work an attempt is made to present a selection of the approaches to parameterize and analyze the dielectric function of semiconductors, as well as some applications.

Band structure of one-dimensional doped photonic crystal with three level atoms using the Fresnel coefficients method

Science.gov (United States)

Jafari, A.; Rahmat, A.; Bakkeshizadeh, S.

2018-01-01

We consider a one-dimensional photonic crystal (1DPC) composed of double-layered dielectrics. Electric permittivity and magnetic permeability of this crystal depends on the incident electromagnetic wave frequency. We suppose that three level atoms have been added to the second layer of each dielectric and this photonic crystal (PC) has been doped. These atoms can be added to the layer with different rates. In this paper, we have calculated and compared the band structure of the mentioned PC considering the effect of added atoms to the second layer with different rates through the Fresnel coefficients method. We find out that according to the effective medium theory, the electric permittivity of the second layer changes. Also the band structure of PC for both TE and TM polarizations changes, too. The width of bandgaps related to “zero averaged refractive index” and “Bragg” increases. Moreover, new gap branches appear in new frequencies at both TE and TM polarizations. In specific state, two branches of “zero permittivity” gap appear in the PC band structure related to TM polarization. With increasing the amount of the filling rate of total volume with three level atoms, we observe a lot of changes in the PC band structure.

Photonic crystals: features and applications (physics research and technology)

CERN Document Server

2013-01-01

The present book is focused on the study of unprecedented control and manipulation of light by photonic crystals (PCs) and their applications. These are micro- or usually nano-structures composed of periodic indexes of refraction of dielectrics with high refractive index contrast. They exhibit optical frequency band gaps in analogy to electronic bands for a periodic potential of a semiconductor crystal lattice. The gemstone opal and butterflys feathers colours are already referred to as natural examples of photonic crystals. The characteristics of such supper-lattices were first reported by Yablonovitch in 1987. The exploitation of photonic crystals is a promising tool in communication, sensors, optical computing, and nanophotonics. Discussed are the various features of one-dimensional (1D) and two-dimensional (2D) photonic crystals, photonic quasi crystals, heterostuctures and PC fibres under a variety of conditions using several materials, and metamaterials. It also focuses on the applications of PCs in opt...

Spectroscopy of photonic band gaps in mesoporous one-dimensional photonic crystals based on aluminum oxide

International Nuclear Information System (INIS)

Gorelik, V.S.; Voinov, Yu.P.; Shchavlev, V.V.; Bi, Dongxue; Shang, Guo Liang; Fei, Guang Tao

2017-01-01

Mesoporous one-dimensional photonic crystals based on aluminum oxide have been synthesized by electrochemical etching method. Reflection spectra of the obtained mesoporous samples in a wide spectral range that covers several band gaps are presented. Microscopic parameters of photonic crystals are calculated and corresponding reflection spectra for the first six band gaps are presented.

Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells

Directory of Open Access Journals (Sweden)

Mahshid Mokhtarnejad

2017-01-01

Full Text Available This study examined MQWs made of InGaAs/GaAs, InAlAs/InP, and InGaAs/InP in terms of their band structure and reflectivity. We also demonstrated that the reflectivity of MQWs under normal incident was at maximum, while both using a strong pump and changing incident angle reduced it. Reflectivity of the structure for a weak probe pulse depends on polarization, intensity of the pump pulse, and delay between the probe pulse and the pump pulse. So this system can be used as an ultrafast all-optical switch which is inspected by the transfer matrix method. After studying the band structure of the one-dimensional photonic crystal, the optical stark effect (OSE was considered on it. Due to the OSE on virtual exciton levels, the switching time can be in the order of picoseconds. Moreover, it is demonstrated that, by introducing errors in width of barrier and well as well as by inserting defect, the reflectivity is reduced. Thus, by employing the mechanism of stark effect MQWs band-gaps can be easily controlled which is useful in designing MWQ based optical switches and filters. By comparing the results, we observe that the reflectivity of MWQ containing 200 periods of InAlAs/InP quantum wells shows the maximum reflectivity of 96%.

Analysis of photonic band gaps in two-dimensional photonic crystals with rods covered by a thin interfacial layer

International Nuclear Information System (INIS)

Trifonov, T.; Marsal, L.F.; Pallares, J.; Rodriguez, A.; Alcubilla, R.

2004-01-01

We investigate different aspects of the absolute photonic band gap (PBG) formation in two-dimensional photonic structures consisting of rods covered with a thin dielectric film. Specifically, triangular and honeycomb lattices in both complementary arrangements, i.e., air rods drilled in silicon matrix and silicon rods in air, are studied. We consider that the rods are formed of a dielectric core (silicon or air) surrounded by a cladding layer of silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), or germanium (Ge). Such photonic lattices present absolute photonic band gaps, and we study the evolution of these gaps as functions of the cladding material and thickness. Our results show that in the case of air rods in dielectric media the existence of dielectric cladding reduces the absolute gap width and may cause complete closure of the gap if thick layers are considered. For the case of dielectric rods in air, however, the existence of a cladding layer can be advantageous and larger absolute PBG's can be achieved

Realization of a complementary medium using dielectric photonic crystals.

Science.gov (United States)

Xu, Tao; Fang, Anan; Jia, Ziyuan; Ji, Liyu; Hang, Zhi Hong

2017-12-01

By exploiting the scaling invariance of photonic band diagrams, a complementary photonic crystal slab structure is realized by stacking two uniformly scaled double-zero-index dielectric photonic crystal slabs together. The space cancellation effect in complementary photonic crystals is demonstrated in both numerical simulations and microwave experiments. The refractive index dispersion of double-zero-index dielectric photonic crystal is experimentally measured. Using pure dielectrics, our photonic crystal structure will be an ideal platform to explore various intriguing properties related to a complementary medium.

Light propagation in two-dimensional photonic crystals based on uniaxial polar materials: results on polaritonic spectrum

Science.gov (United States)

Gómez-Urrea, H. A.; Duque, C. A.; Pérez-Quintana, I. V.; Mora-Ramos, M. E.

2017-03-01

The dispersion relations of two-dimensional photonic crystals made of uniaxial polaritonic cylinders arranged in triangular lattice are calculated. The particular case of the transverse magnetic polarization is taken into account. Three different uniaxial materials showing transverse phonon-polariton excitations are considered: aluminum nitride, gallium nitride, and indium nitride. The study is carried out by means of the finite-difference time-domain technique for the solution of Maxwell equations, together with the method of the auxiliary differential equation. It is shown that changing the filling fraction can result in the modification of both the photonic and polaritonic bandgaps in the optical dispersion relations. Wider gaps appear for smaller filling fraction values, whereas a larger number of photonic bandgaps will occur within the frequency range considered when a larger filling fraction is used. The effect of including the distinct wurtzite III-V nitride semiconductors as core materials in the cylinders embedded in the air on the photonic properties is discussed as well, highlighting the effect of the dielectric anisotropy on the properties of the polaritonic part of the photonic spectrum.

Plasma properties of quasi-one-dimensional ring

CERN Document Server

Shmelev, G M

2001-01-01

The plasma properties of the quasi-one-dimensional ring in the threshold cases of low and high frequencies, corresponding to the plasma oscillations and dielectric relaxation are studied within the frames of the classical approach. The plasma oscillations spectrum and the electron dielectric relaxation frequency in the quasi-one-dimensional ring are calculated. The plasmons spectrum equidistance is identified. It is shown , that in contrast to the three-dimensional case there takes place the dielectric relaxation dispersion, wherefrom there follows the possibility of studying the carriers distribution in the quasi-one-dimensional rings through the method of the dielectric relaxation spectroscopy

Highly Enhanced Many-Body Interactions in Anisotropic 2D Semiconductors.

Science.gov (United States)

Sharma, Ankur; Yan, Han; Zhang, Linglong; Sun, Xueqian; Liu, Boqing; Lu, Yuerui

2018-05-15

Atomically thin two-dimensional (2D) semiconductors have presented a plethora of opportunities for future optoelectronic devices and photonics applications, made possible by the strong light matter interactions at the 2D quantum limit. Many body interactions between fundamental particles in 2D semiconductors are strongly enhanced compared with those in bulk semiconductors because of the reduced dimensionality and, thus, reduced dielectric screening. These enhanced many body interactions lead to the formation of robust quasi-particles, such as excitons, trions, and biexcitons, which are extremely important for the optoelectronics device applications of 2D semiconductors, such as light emitting diodes, lasers, and optical modulators, etc. Recently, the emerging anisotropic 2D semiconductors, such as black phosphorus (termed as phosphorene) and phosphorene-like 2D materials, such as ReSe 2 , 2D-perovskites, SnS, etc., show strong anisotropic optical and electrical properties, which are different from conventional isotropic 2D semiconductors, such as transition metal dichalcogenide (TMD) monolayers. This anisotropy leads to the formation of quasi-one-dimensional (quasi-1D) excitons and trions in a 2D system, which results in even stronger many body interactions in anisotropic 2D materials, arising from the further reduced dimensionality of the quasi-particles and thus reduced dielectric screening. Many body interactions have been heavily investigated in TMD monolayers in past years, but not in anisotropic 2D materials yet. The quasi-particles in anisotropic 2D materials have fractional dimensionality which makes them perfect candidates to serve as a platform to study fundamental particle interactions in fractional dimensional space. In this Account, we present our recent progress related to 2D phosphorene, a 2D system with quasi-1D excitons and trions. Phosphorene, because of its unique anisotropic properties, provides a unique 2D platform for investigating the

Lateral shifting in one dimensional chiral photonic crystal

Energy Technology Data Exchange (ETDEWEB)

You Yuan, E-mail: yctcyouyuan@163.com [School of Physics and Electronics, Yancheng Teachers University, Yancheng, 224002 Jiangsu (China); Chen Changyuan [School of Physics and Electronics, Yancheng Teachers University, Yancheng, 224002 Jiangsu (China)

2012-07-01

We report the lateral shifts of the transmitted waves in a one dimensional chiral photonic crystal by using the stationary-phase approach. It is revealed that two kinds of lateral shifts are observed due to the existence of cross coupling in chiral materials, which is different from what has been observed in previous non-chiral photonic crystals. Unlike the chiral slab, the positions of lateral shift peaks are closely related to the band edges of band gap characteristics of periodic structure and lateral shifts can be positive as well as negative. Besides, the lateral shifts show a strong dependence on the chiral factor, which varies the lateral shift peaks in both magnitudes and positions. These features are desirable for future device applications.

Lateral shifting in one dimensional chiral photonic crystal

International Nuclear Information System (INIS)

You Yuan; Chen Changyuan

2012-01-01

We report the lateral shifts of the transmitted waves in a one dimensional chiral photonic crystal by using the stationary-phase approach. It is revealed that two kinds of lateral shifts are observed due to the existence of cross coupling in chiral materials, which is different from what has been observed in previous non-chiral photonic crystals. Unlike the chiral slab, the positions of lateral shift peaks are closely related to the band edges of band gap characteristics of periodic structure and lateral shifts can be positive as well as negative. Besides, the lateral shifts show a strong dependence on the chiral factor, which varies the lateral shift peaks in both magnitudes and positions. These features are desirable for future device applications.

The gaseous plasmonic response of a one-dimensional photonic crystal composed of striated plasma layers

Science.gov (United States)

Wang, B.; Righetti, F.; Cappelli, M. A.

2018-03-01

We present simulations of the response of a one-dimensional striated plasma slab to incident electromagnetic waves that span regions both above and below the plasma frequency, ωp. Photonic bandgap modes are present throughout these regions, and volume and surface plasmon modes facilitate the response below ωp, where the dielectric constant, ɛp frequency, there is a feature for transverse magnetic (TM) polarization that is associated with the emergence of new dispersion branches. Also for TM polarization, a very low frequency mode emerges outside of the light line. Both these features are plasmonic and are attributed to the excitation of symmetric and asymmetric surface plasmon polaritons (SPPs) at the plasma-dielectric interface of the multi-layer plasma slabs. The features seen in the bandgap maps near ωp reveal the possible presence of Fano resonances between the symmetric branch of the SPP and the Bragg resonance as a narrow stop band (anti-node) is superimposed on the otherwise broad transmission band seen for transverse-electric polarization. We provide renderings that allow the visualization of where the transmission bands are and compute the transmittance and reflectance to facilitate the design and interpretation of experiments. The transmission bands associated with photonic bandgap modes above the plasma frequency are rather broad. The plasmonic modes, i.e., those associated with ɛp ≤ 0, can be quite narrow and are tuned by varying the plasma density, affording an opportunity for the application of these structures as ultra-narrow tunable microwave transmission filters.

Amplifying and compressing optical filter based on one-dimensional ternary photonic crystal structure containing gain medium

Energy Technology Data Exchange (ETDEWEB)

Jamshidi-Ghaleh, Kazem, E-mail: k-jamshidi@azaruinv.ac.ir [Department of Physics, Azarbaijan Shahid Madani University, Tabriz (Iran, Islamic Republic of); Ebrahimpour, Zeinab [Department of Physics, Shahid Beheshti University, Evin 19839 Tehran (Iran, Islamic Republic of); Moslemi, Fatemeh [Department of Physics, Azarbaijan Shahid Madani University, Tabriz (Iran, Islamic Republic of)

2015-07-15

The transmission spectrum properties of the one-dimensional ternary photonic crystal (1DTPC) structure, composed of dielectric (D), metal (M) and gain (G) materials, with three different arrangements of (DGM){sup N}, (GDM){sup N} and (DMG){sup N}, where N is the number of periodicity, were investigated. Two full photonic band gaps and N−1 resonant peaks, localized between them, were observed on transmittance spectra on near-UV spectrum region. When the gained layer was placed in front of the metal, the peaks appeared with higher resolution. There is a peak, localized on the higher band-edge of the first gap, which shows very interesting property than the other peaks. Thus, it amplifies and compresses faster with increase in the N and strength of the gain coefficient. The effects of the gain coefficient and periodicity number are graphically illustrated. This communication presents a PC structure that can be a good candidate to design an amplifying and compressing single or multi-channel optical filter in the UV region.

The band structures of three-dimensional nonlinear plasma photonic crystals

Directory of Open Access Journals (Sweden)

Hai-Feng Zhang

2018-01-01

Full Text Available In this paper, the properties of the photonic band gaps (PBGs for three-dimensional (3D nonlinear plasma photonic crystals (PPCs are theoretically investigated by the plane wave expansion method, whose equations for calculations also are deduced. The configuration of 3D nonlinear PPCs is the Kerr nonlinear dielectric spheres (Kerr effect is considered inserted in the plasma background with simple-cubic lattices. The inserted dielectric spheres are Kerr nonlinear dielectrics whose relative permittivities are the functions of the external light intensity. Three different Kerr nonlinear dielectrics are considered, which can be expressed as the functions of space coordinates. The influences of the parameters for the Kerr nonlinear dielectrics on the PBGs also are discussed. The calculated results demonstrate that the locations, bandwidths and number of PBGs can be manipulated with the different Kerr nonlinear dielectrics. Compared with the conventional 3D dielectric PCs and PPCs with simple-cubic lattices, the more PBGs or larger PBG can be achieved in the 3D nonlinear PPCs. Those results provide a new way to design the novel devices based on the PPCs.

Quasi-one-dimensional metals on semiconductor surfaces with defects

International Nuclear Information System (INIS)

Hasegawa, Shuji

2010-01-01

Several examples are known in which massive arrays of metal atomic chains are formed on semiconductor surfaces that show quasi-one-dimensional metallic electronic structures. In this review, Au chains on Si(557) and Si(553) surfaces, and In chains on Si(111) surfaces, are introduced and discussed with regard to the physical properties determined by experimental data from scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES) and electrical conductivity measurements. They show quasi-one-dimensional Fermi surfaces and parabolic band dispersion along the chains. All of them are known from STM and ARPES to exhibit metal-insulator transitions by cooling and charge-density-wave formation due to Peierls instability of the metallic chains. The electrical conductivity, however, reveals the metal-insulator transition only on the less-defective surfaces (Si(553)-Au and Si(111)-In), but not on a more-defective surface (Si(557)-Au). The latter shows an insulating character over the whole temperature range. Compared with the electronic structure (Fermi surfaces and band dispersions), the transport property is more sensitive to the defects. With an increase in defect density, the conductivity only along the metal atomic chains was significantly reduced, showing that atomic-scale point defects decisively interrupt the electrical transport along the atomic chains and hide the intrinsic property of transport in quasi-one-dimensional systems.

Switchable Photonic Crystals Using One-Dimensional Confined Liquid Crystals for Photonic Device Application.

Science.gov (United States)

Ryu, Seong Ho; Gim, Min-Jun; Lee, Wonsuk; Choi, Suk-Won; Yoon, Dong Ki

2017-01-25

Photonic crystals (PCs) have recently attracted considerable attention, with much effort devoted to photonic bandgap (PBG) control for varying the reflected color. Here, fabrication of a modulated one-dimensional (1D) anodic aluminum oxide (AAO) PC with a periodic porous structure is reported. The PBG of the fabricated PC can be reversibly changed by switching the ultraviolet (UV) light on/off. The AAO nanopores contain a mixture of photoresponsive liquid crystals (LCs) with irradiation-activated cis/trans photoisomerizable azobenzene. The resultant mixture of LCs in the porous AAO film exhibits a reversible PBG, depending on the cis/trans configuration of azobenzene molecules. The PBG switching is reliable over many cycles, suggesting that the fabricated device can be used in optical and photonic applications such as light modulators, smart windows, and sensors.

Theory of coherent time-dependent transport in one-dimensional multiband semiconductor super-lattices

DEFF Research Database (Denmark)

Rotvig, J.; Smith, H.; Jauho, Antti-Pekka

1996-01-01

We present an analytical study of one-dimensional semiconductor superlattices in external electric fields, which may be time dependent. A number of general results for the (quasi)energies and eigenstates are derived. An equation of motion for the density matrix is obtained for a two-band model...

Optical Tamm states in one-dimensional superconducting photonic crystal

Energy Technology Data Exchange (ETDEWEB)

El Abouti, O. [LPMR, Département de Physique, Faculté des Sciences, Université Mohammed 1, 60000 Oujda (Morocco); El Boudouti, E. H. [LPMR, Département de Physique, Faculté des Sciences, Université Mohammed 1, 60000 Oujda (Morocco); IEMN, UMR-CNRS 8520, UFR de Physique, Université de Lille 1, 59655 Villeneuve d' Ascq (France); El Hassouani, Y. [ESIM, Département de Physique, Faculté des Sciences et Techniques, Université Moulay Ismail, Boutalamine BP 509, 52000 Errachidia (Morocco); Noual, A. [LPMR, Département de Physique, Faculté des Sciences, Université Mohammed 1, 60000 Oujda (Morocco); Ecole Normale Supérieur de Tétouan, Université Abdelmalek Essaadi, Tétouan (Morocco); Djafari-Rouhani, B. [IEMN, UMR-CNRS 8520, UFR de Physique, Université de Lille 1, 59655 Villeneuve d' Ascq (France)

2016-08-15

In this study, we investigate localized and resonant optical waves associated with a semi-infinite superlattice made out of superconductor-dielectric bilayers and terminated with a cap layer. Both transverse electric and transverse magnetic waves are considered. These surface modes are analogous to the so-called Tamm states associated with electronic states found at the surface of materials. The surface guided modes induced by the cap layer strongly depend on whether the superlattice ends with a superconductor or a dielectric layer, the thickness of the surface layer, the temperature of the superconductor layer as well as on the polarization of the waves. Different kinds of surface modes are found and their properties examined. These structures can be used to realize the highly sensitive photonic crystal sensors.

One-dimensional plasma photonic crystals with sinusoidal densities

International Nuclear Information System (INIS)

Qi, L.; Shang, L.; Zhang, S.

2014-01-01

Properties of electromagnetic waves with normal and oblique incidence have been studied for one-dimensional plasma layers with sinusoidal densities. Wave transmittance as a function of wave frequency exhibits photonic band gaps characteristic of photonic crystals. For periodic structures, increasing collision frequency is demonstrated to lead to greater absorption, increasing the modulation factor enlarges the gap width, and increasing incidence angle can change the gap locations of the two polarizations. If a defect layer is introduced by inserting a new plasma layer in the center, a defect mode may appear within the gap. Periodic number, collision frequency, and modulation factor can affect magnitude of the defect mode. The incidence angle enables the frequency to be tuned. Defect layer thickness affects both frequency and number of defect modes. These results may provide theoretical guidance in designing tunable narrow-band filters

Analytical models of optical response in one-dimensional semiconductors

International Nuclear Information System (INIS)

Pedersen, Thomas Garm

2015-01-01

The quantum mechanical description of the optical properties of crystalline materials typically requires extensive numerical computation. Including excitonic and non-perturbative field effects adds to the complexity. In one dimension, however, the analysis simplifies and optical spectra can be computed exactly. In this paper, we apply the Wannier exciton formalism to derive analytical expressions for the optical response in four cases of increasing complexity. Thus, we start from free carriers and, in turn, switch on electrostatic fields and electron–hole attraction and, finally, analyze the combined influence of these effects. In addition, the optical response of impurity-localized excitons is discussed. - Highlights: • Optical response of one-dimensional semiconductors including excitons. • Analytical model of excitonic Franz–Keldysh effect. • Computation of optical response of impurity-localized excitons

Synthesis, characterization, and anomalous dielectric and conductivity performance of one-dimensional (bdaH)InSe2 (bda = 1,4-butanediamine)

International Nuclear Information System (INIS)

Du, Ke-Zhao; Hu, Wan-Biao; Hu, Bing; Guan, Xiang-Feng; Huang, Xiao-Ying

2011-01-01

Graphical abstract: Anomalous dielectric and conductivity performance have been observed in the organic-containing indium selenide (bdaH)InSe 2 , which are attributed to the water molecules existing in the crystal boundary rather than phase transition. Highlights: → The title compound is the first example of organic-containing one-dimensional indium selenide. → The anomalous dielectric peak is attributed to water molecules in crystal boundary. → The inorganic and organic components of the title compound are connected via hydrogen bonding to form a supramolecular three-dimensional network. -- Abstract: A new indium selenide, namely (bdaH)InSe 2 (1) (bda = 1,4-butanediamine) has been solvothermally synthesized and structurally characterized. It belongs to the non-centrosymmetric space group Fdd2. Its structure features an infinite one-dimensional anionic chain of [InSe 2 ] n n- with monoprotonated [bdaH] + as charge compensating cation. The organic [bdaH] + cations are joined into a supramolecular one-dimensional chain via N-H...N hydrogen bonding, which further interacts with the inorganic chain via N-H...Se and C-H...Se hydrogen bonding, forming a supramolecular three-dimensional network. Based on such a well-defined structure, the thermal stability, optical, conductivity, and dielectric properties were systematically investigated, showing that dielectric constant, as well as conductivity, had a hump at about 95 o C, which could be attributed to water molecules in the crystal boundary.

Water-equivalent one-dimensional scintillating fiber-optic dosimeter for measuring therapeutic photon beam

International Nuclear Information System (INIS)

Moon, Jinsoo; Won Jang, Kyoung; Jae Yoo, Wook; Han, Ki-Tek; Park, Jang-Yeon; Lee, Bongsoo

2012-01-01

In this study, we fabricated a one-dimensional scintillating fiber-optic dosimeter, which consists of 9 scintillating fiber-optic dosimeters, septa, and PMMA blocks for measuring surface and percentage depth doses of a therapeutic photon beam. Each dosimeter embedded in the 1-D scintillating fiber-optic dosimeter is composed of square type organic scintillators and plastic optical fibers. Also black PVC films are used as septa to minimize cross-talk between the scintillating fiber-optic dosimeters. To construct a dosimeter system, a 1-D scintillating fiber-optic dosimeter and a CMOS image sensor were combined with 20 m-length plastic optical fibers. Using the dosimeter system, we measured surface and percentage depth doses of 6 and 15 MV photon beams and compared the results with those of EBT films and an ionization chamber. - Highlights: ► Fabrication of a one-dimensional scintillating fiber-optic dosimeter. ► The one-dimensional scintillating fiber-optic dosimeter has 9 scintillating fiber-optic dosimeters. ► Measurements of surface and percentage depth doses of a therapeutic photon beam. ► The results were compared with those of EBT films and an ionization chamber.

Studying The Effect of Various Parameters on The Characteristics of The Dielectric and Metallic Photonic Crystals

International Nuclear Information System (INIS)

Ismail, M.; Badawy, Z.M.; Abdel-Rahman, E.

2015-01-01

Transmittance characteristics of two types of photonic crystals have been analysed using the transfer matrix method. The first one is the dielectric photonic crystal (DPC), and the second is the metallic photonic crystal (MPC). The effect of the most parameters on the transmission spectra of the dielectric and metallic photonic crystals has been studied

Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method

International Nuclear Information System (INIS)

Xu Xingsheng; Chen Hongda; Xiong Zhigang; Jin Aizi; Gu Changzhi; Cheng Bingying; Zhang Daozhong

2007-01-01

In this paper, we introduced the fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam machine, it shows that the method of focused-ion beam can fabricate two-dimensional photonic crystal and photonic crystal device efficiently, and the quality of the fabricated photonic crystal is high. Using the focused-ion beam method, we fabricate photonic crystal wavelength division multiplexer, and its characteristics are analyzed

Internal optical bistability of quasi-two-dimensional semiconductor nanoheterostructures

Science.gov (United States)

Derevyanchuk, Oleksandr V.; Kramar, Natalia K.; Kramar, Valeriy M.

2018-01-01

We represent the results of numerical computations of the frequency and temperature domains of possible realization of internal optical bistability in flat quasi-two-dimensional semiconductor nanoheterostructures with a single quantum well (i.e., nanofilms). Particular computations have been made for a nanofilm of layered semiconductor PbI2 embedded in dielectric medium, i.e. ethylene-methacrylic acid (E-MAA) copolymer. It is shown that an increase in the nanofilm's thickness leads to a long-wave shift of the frequency range of the manifestation the phenomenon of bistability, to increase the size of the hysteresis loop, as well as to the expansion of the temperature interval at which the realization of this phenomenon is possible.

Metallic dielectric photonic crystals and methods of fabrication

Energy Technology Data Exchange (ETDEWEB)

Chou, Jeffrey Brian; Kim, Sang-Gook

2016-12-20

A metallic-dielectric photonic crystal is formed with a periodic structure defining a plurality of resonant cavities to selectively absorb incident radiation. A metal layer is deposited on the inner surfaces of the resonant cavities and a dielectric material fills inside the resonant cavities. This photonic crystal can be used to selectively absorb broadband solar radiation and then reemit absorbed radiation in a wavelength band that matches the absorption band of a photovoltaic cell. The photonic crystal can be fabricated by patterning a sacrificial layer with a plurality of holes, into which is deposited a supporting material. Removing the rest of the sacrificial layer creates a supporting structure, on which a layer of metal is deposited to define resonant cavities. A dielectric material then fills the cavities to form the photonic crystal.

Metallic dielectric photonic crystals and methods of fabrication

Energy Technology Data Exchange (ETDEWEB)

Chou, Jeffrey Brian; Kim, Sang-Gook

2017-12-05

A metallic-dielectric photonic crystal is formed with a periodic structure defining a plurality of resonant cavities to selectively absorb incident radiation. A metal layer is deposited on the inner surfaces of the resonant cavities and a dielectric material fills inside the resonant cavities. This photonic crystal can be used to selectively absorb broadband solar radiation and then reemit absorbed radiation in a wavelength band that matches the absorption band of a photovoltaic cell. The photonic crystal can be fabricated by patterning a sacrificial layer with a plurality of holes, into which is deposited a supporting material. Removing the rest of the sacrificial layer creates a supporting structure, on which a layer of metal is deposited to define resonant cavities. A dielectric material then fills the cavities to form the photonic crystal.

Simulating Photons and Plasmons in a Three-dimensional Lattice

International Nuclear Information System (INIS)

Pletzer, A.; Shvets, G.

2002-01-01

Three-dimensional metallic photonic structures are studied using a newly developed mixed finite element-finite difference (FE-FD) code, Curly3d. The code solves the vector Helmholtz equation as an eigenvalue problem in the unit cell of a triply periodic lattice composed of conductors and/or dielectrics. The mixed FE-FD discretization scheme ensures rapid numerical convergence of the eigenvalue and allows the code to run at low resolution. Plasmon and photonic band structure calculations are presented

Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.

Science.gov (United States)

Hung, Nguyen T; Hasdeo, Eddwi H; Nugraha, Ahmad R T; Dresselhaus, Mildred S; Saito, Riichiro

2016-07-15

We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones.

Electrically Induced Two-Photon Transparency in Semiconductor Quantum Wells

International Nuclear Information System (INIS)

Hayat, Alex; Nevet, Amir; Orenstein, Meir

2009-01-01

We demonstrate experimentally two-photon transparency, achieved by current injection into a semiconductor quantum-well structure which exhibits two-photon emission. The two-photon induced luminescence is progressively reduced by the injected current, reaching the point of two-photon transparency - a necessary condition for semiconductor two-photon gain and lasing. These results agree with our calculations.

Plasmon-exciton polaritons in two-dimensional semiconductor/metal interfaces

Science.gov (United States)

Gonçalves, P. A. D.; Bertelsen, L. P.; Xiao, Sanshui; Mortensen, N. Asger

2018-01-01

The realization and control of polaritons is of paramount importance in the prospect of novel photonic devices. Here, we investigate the emergence of plasmon-exciton polaritons in hybrid structures consisting of a two-dimensional transition-metal dichalcogenide (TMDC) deposited onto a metal substrate or coating a metallic thin film. We determine the polaritonic spectrum and show that, in the former case, the addition of a top dielectric layer and, in the latter case, the thickness of the metal film can be used to tune and promote plasmon-exciton interactions well within the strong-coupling regime. Our results demonstrate that Rabi splittings exceeding 100 meV can readily be achieved in planar dielectric/TMDC/metal structures under ambient conditions. We thus believe that this Rapid Communication provides a simple and intuitive picture to tailor strong coupling in plexcitonics with potential applications for engineering compact photonic devices with tunable optical properties.

Exciton molecule in semiconductors by two-photon absorption

International Nuclear Information System (INIS)

Arya, K.; Hassan, A.R.

1976-07-01

Direct creation of bi-exciton states by two-photon absorption in direct gap semiconductors is investigated theoretically. A numerical application to the case of CuCl shows that the two-photon absorption coefficient for bi-excitonic transitions is larger than that for two-photon interband transitions by three orders of magnitude. It becomes comparable to that for one-photon excitonic transitions for available laser intensities. The main contribution to this enhancement of the absorption coefficient for the transitions to the bi-exciton states is found to be from the resonance effect

Analysis of photonic band gap in dispersive properties of tunable three-dimensional photonic crystals doped by magnetized plasma

International Nuclear Information System (INIS)

Zhang HaiFeng; Liu Shaobin; Yang Huan; Kong Xiangkun

2013-01-01

In this paper, the magnetooptical effects in dispersive properties for two types of three-dimensional magnetized plasma photonic crystals (MPPCs) containing homogeneous dielectric and magnetized plasma with diamond lattices are theoretically investigated for electromagnetic (EM) wave based on plane wave expansion (PWE) method, as incidence EM wave vector is parallel to the external magnetic field. The equations for two types of MPPCs with diamond lattices (dielectric spheres immersed in magnetized plasma background or vice versa) are theoretically deduced. The influences of dielectric constant, plasma collision frequency, filling factor, the external magnetic field, and plasma frequency on the dispersive properties for both types of structures are studied in detail, respectively, and some corresponding physical explanations are also given. From the numerical results, it has been shown that the photonic band gaps (PBGs) for both types of MPPCs can be manipulated by plasma frequency, filling factor, the external magnetic field, and the relative dielectric constant of dielectric, respectively. Especially, the external magnetic field can enlarge the PBG for type-2 structure (plasma spheres immersed in dielectric background). However, the plasma collision frequency has no effect on the dispersive properties of two types of three-dimensional MPPCs. The locations of flatbands regions for both types of structures cannot be tuned by any parameters except for plasma frequency and the external magnetic field. The analytical results may be informative and of technical use to design the MPPCs devices.

One-dimensional modulation instability in biased two-photon photorefractive-photovoltaic crystals

International Nuclear Information System (INIS)

Zhan Kaiyun; Hou Chunfeng; Li Xin

2010-01-01

The one-dimensional modulation instability of broad optical beams in biased two-photon photorefractive-photovoltaic crystals is investigated under steady-state conditions. Our analysis indicates that the modulation instability growth rate depends on the external bias field, the bulk photovoltaic effect and the ratio of the intensity of the incident beam to that of the dark irradiance. Moreover, our results show that this modulation instability growth rate is the same as that in two-photon photorefractive-photovoltaic crystals under open circuit conditions in the absence of an external bias field, and the modulation instability growth rate in two-photon biased photorefractive-nonphotovoltaic crystals can be predicted when the bulk photovoltaic effect is neglected.

Resonance generation of photons from vacuum in cavities due to strong periodical changes of conductivity in a thin semiconductor boundary layer

International Nuclear Information System (INIS)

Dodonov, A V; Dodonov, V V

2005-01-01

We study a possibility of photon generation from vacuum in a cavity with an artificial effective time-dependent plasma mirror, which could be created by means of periodical short laser pulses, illuminating a thin semiconductor slab. We take into account two important circumstances: a big imaginary part of the complex time-dependent dielectric permeability inside the slab and a strong dependence of this imaginary part on the distance from the surface of the slab. We find the conditions under which the usual unitary quantization schemes in time-dependent media with real dielectric permeability can be applied to the problem concerned with relatively small (a few per cent) error. We show that, by using a slab with thickness of the order of 1 mm, it is possible to generate a large number of microwave (GHz) photons (up to 10 8 or more) after several thousand picosecond pulses with repetition frequency of the order of 1 GHz, provided that semiconductor materials with high mobility of carriers, high photoabsorption efficiency and small recombination time (less than 1 ns) can be found. We discuss the possible advantages of modes with TM polarization over TE ones, as well as some other important problems to be solved

Entangled photon pair generation by spontaneous parametric down-conversion in finite-length one-dimensional photonic crystals

International Nuclear Information System (INIS)

Centini, M.; Sciscione, L.; Sibilia, C.; Bertolotti, M.; Perina, J. Jr.; Scalora, M.; Bloemer, M.J.

2005-01-01

A description of spontaneous parametric down-conversion in finite-length one-dimensional nonlinear photonic crystals is developed using semiclassical and quantum approaches. It is shown that if a suitable averaging is added to the semiclassical model, its results are in very good agreement with the quantum approach. We propose two structures made with GaN/AlN that generate both degenerate and nondegenerate entangled photon pairs. Both structures are designed so as to achieve a high efficiency of the nonlinear process

VO{sub 2}-like thermo-optical switching effect in one-dimensional nonlinear defective photonic crystals

Energy Technology Data Exchange (ETDEWEB)

Zhang, Juan, E-mail: juanzhang@staff.shu.edu.cn, E-mail: ywang@siom.ac.cn; Zhang, Rongjun [Key Laboratory of Specialty Fiber Optics and Optical Access Networks, School of Communication and Information Engineering, Shanghai University, Shanghai 200072 (China); Wang, Yang, E-mail: juanzhang@staff.shu.edu.cn, E-mail: ywang@siom.ac.cn [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

2015-06-07

A new approach to achieve VO{sub 2}-like thermo-optical switching in a one-dimensional photonic crystal by the combination of thermo-optical and optical Kerr effects was proposed and numerically demonstrated in this study. The switching temperature and the hysteresis width can be tuned in a wide temperature range. Steep transition, high optical contrast, and low pumping power can be achieved at the same time. This kind of one-dimensional photonic crystal-based bistable switch will be low-cost, easy-to-fabricate, and versatile in practical applications compared with traditional VO{sub 2}-type one.

Emerging Low-Dimensional Materials for Nonlinear Optics and Ultrafast Photonics.

Science.gov (United States)

Liu, Xiaofeng; Guo, Qiangbing; Qiu, Jianrong

2017-04-01

Low-dimensional (LD) materials demonstrate intriguing optical properties, which lead to applications in diverse fields, such as photonics, biomedicine and energy. Due to modulation of electronic structure by the reduced structural dimensionality, LD versions of metal, semiconductor and topological insulators (TIs) at the same time bear distinct nonlinear optical (NLO) properties as compared with their bulk counterparts. Their interaction with short pulse laser excitation exhibits a strong nonlinear character manifested by NLO absorption, giving rise to optical limiting or saturated absorption associated with excited state absorption and Pauli blocking in different materials. In particular, the saturable absorption of these emerging LD materials including two-dimensional semiconductors as well as colloidal TI nanoparticles has recently been utilized for Q-switching and mode-locking ultra-short pulse generation across the visible, near infrared and middle infrared wavelength regions. Beside the large operation bandwidth, these ultrafast photonics applications are especially benefit from the high recovery rate as well as the facile processibility of these LD materials. The prominent NLO response of these LD materials have also provided new avenues for the development of novel NLO and photonics devices for all-optical control as well as optical circuits beyond ultrafast lasers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhancement of Faraday effect in one-dimensional magneto-optical photonic crystal including a magnetic layer with wavelength dependent off-diagonal elements of dielectric constant tensor

International Nuclear Information System (INIS)

Inui, Chie; Ozaki, Shinsuke; Kura, Hiroaki; Sato, Tetsuya

2011-01-01

Optical and magneto-optical properties of one-dimensional magneto-optical photonic crystal (1-D MPC) prepared by the sol-gel dip-coating method, including a magnetic defect layer composed of mixture of CoFe 2 O 4 and SiO 2 , are investigated from both the experimental and theoretical standpoints. The resonant transmission of light was observed around 570 nm in the photonic band gap. The Faraday rotation angle θ F showed two maxima at 490 and 640 nm, and the wavelength dependence of θ F above 760 nm was similar to that of the CoFe 2 O 4 +SiO 2 single-layer film. The two maxima of θ F are attributed to the enhanced Faraday rotation of nonmagnetic TiO 2 layers in the cavity structure and that in magnetic CoFe 2 O 4 +SiO 2 layer through the light localization in MPC. The maximum value of θ F due to the magnetic CoFe 2 O 4 +SiO 2 layer in the MPC was 22-times larger than that in the single-layer film. The simulation study of MPC with CoFe 2 O 4 +SiO 2 magnetic defect layer, based on the matrix approach method, showed that the resonant light transmission was accompanied by the localization of electric field, and large enhancement of θ F appeared at different wavelengths so as to agree with the experimental features. This can be explained in terms of the wavelength dependent off-diagonal components of the dielectric constant tensor in addition to the large extinction coefficient in the CoFe 2 O 4 +SiO 2 magnetic defect layer. - Highlights: → 1-D magnetic photonic crystal (MPC) prepared by sol-gel method. → Enhancement of Faraday rotation due to the magnetic defect layer of CoFe 2 O 4 . → Shift of wavelength of Faraday rotation maximum from resonant light transmission.

Chiral-nematic liquid crystals as one dimensional photonic materials in optical sensors

NARCIS (Netherlands)

Mulder, D.J.; Schenning, A.P.H.J.; Bastiaansen, C.W.M.

2014-01-01

Current developments in the field of thermotropic chiral-nematic liquid crystals as sensors are discussed. These one dimensional photonic materials are based on low molecular weight liquid crystals and chiral-nematic polymeric networks. For both low molecular weight LCs and polymer networks,

Broadband one-dimensional photonic crystal wave plate containing single-negative materials.

Science.gov (United States)

Chen, Yihang

2010-09-13

The properties of the phase shift of wave reflected from one-dimensional photonic crystals consisting of periodic layers of single-negative (permittivity- or permeability-negative) materials are demonstrated. As the incident angle increases, the reflection phase shift of TE wave decreases, while that of TM wave increases. The phase shifts of both polarized waves vary smoothly as the frequency changes across the photonic crystal stop band. Consequently, the difference between the phase shift of TE and that of TM wave could remain constant in a rather wide frequency range inside the stop band. These properties are useful to design wave plate or retarder which can be used in wide spectral band. In addition, a broadband photonic crystal quarter-wave plate is proposed.

Photonic band gap engineering in 2D photonic crystals

Indian Academy of Sciences (India)

-dimensional photonic crystals with square lattices composed of air holes in dielectric and vice versa i.e., dielectric rods in air, using the plane-wave expansion method are investigated. We then study, how the photonic band gap size is ...

Study on sensing property of one-dimensional ring mirror-defect photonic crystal

Science.gov (United States)

Chen, Ying; Luo, Pei; Cao, Huiying; Zhao, Zhiyong; Zhu, Qiguang

2018-02-01

Based on the photon localization and the photonic bandgap characteristics of photonic crystals (PCs), one-dimensional (1D) ring mirror-defect photonic crystal structure is proposed. Due to the introduction of mirror structure, a defect cavity is formed in the center of the photonic crystal, and then the resonant transmission peak can be obtained in the bandgap of transmission spectrum. The transfer matrix method is used to establish the relationship model between the resonant transmission peak and the structure parameters of the photonic crystals. Using the rectangular air gate photonic crystal structure, the dynamic monitoring of the detected gas sample parameters can be achieved from the shift of the resonant transmission peak. The simulation results show that the Q-value can attain to 1739.48 and the sensitivity can attain to 1642 nm ṡ RIU-1, which demonstrates the effectiveness of the sensing structure. The structure can provide certain theoretical reference for air pollution monitoring and gas component analysis.

Synthesis, characterization, and anomalous dielectric and conductivity performance of one-dimensional (bdaH)InSe{sub 2} (bda = 1,4-butanediamine)

Energy Technology Data Exchange (ETDEWEB)

Du, Ke-Zhao; Hu, Wan-Biao [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Hu, Bing; Guan, Xiang-Feng [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Huang, Xiao-Ying, E-mail: xyhuang@fjirsm.ac.cn [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

2011-11-15

Graphical abstract: Anomalous dielectric and conductivity performance have been observed in the organic-containing indium selenide (bdaH)InSe{sub 2}, which are attributed to the water molecules existing in the crystal boundary rather than phase transition. Highlights: {yields} The title compound is the first example of organic-containing one-dimensional indium selenide. {yields} The anomalous dielectric peak is attributed to water molecules in crystal boundary. {yields} The inorganic and organic components of the title compound are connected via hydrogen bonding to form a supramolecular three-dimensional network. -- Abstract: A new indium selenide, namely (bdaH)InSe{sub 2} (1) (bda = 1,4-butanediamine) has been solvothermally synthesized and structurally characterized. It belongs to the non-centrosymmetric space group Fdd2. Its structure features an infinite one-dimensional anionic chain of [InSe{sub 2}]{sub n}{sup n-} with monoprotonated [bdaH]{sup +} as charge compensating cation. The organic [bdaH]{sup +} cations are joined into a supramolecular one-dimensional chain via N-H...N hydrogen bonding, which further interacts with the inorganic chain via N-H...Se and C-H...Se hydrogen bonding, forming a supramolecular three-dimensional network. Based on such a well-defined structure, the thermal stability, optical, conductivity, and dielectric properties were systematically investigated, showing that dielectric constant, as well as conductivity, had a hump at about 95 {sup o}C, which could be attributed to water molecules in the crystal boundary.

Axion-photon conversion caused by dielectric interfaces: quantum field calculation

Energy Technology Data Exchange (ETDEWEB)

Ioannisian, Ara N. [Yerevan Physics Institute, Alikhanian Br. 2, 375036 Yerevan (Armenia); Kazarian, Narine [Institute for Theoretical Physics and Modeling, 375036 Yerevan (Armenia); Millar, Alexander J.; Raffelt, Georg G., E-mail: ara.ioannisyan@cern.ch, E-mail: narinkaz@gmail.com, E-mail: millar@mpp.mpg.de, E-mail: raffelt@mpp.mpg.de [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany)

2017-09-01

Axion-photon conversion at dielectric interfaces, immersed in a near-homogeneous magnetic field, is the basis for the dielectric haloscope method to search for axion dark matter. In analogy to transition radiation, this process is possible because the photon wave function is modified by the dielectric layers ('Garibian wave function') and is no longer an eigenstate of momentum. A conventional first-order perturbative calculation of the transition probability between a quantized axion state and these distorted photon states provides the microwave production rate. It agrees with previous results based on solving the classical Maxwell equations for the combined system of axions and electromagnetic fields. We argue that in general the average photon production rate is given by our result, independently of the detailed quantum state of the axion field. Moreover, our result provides a new perspective on axion-photon conversion in dielectric haloscopes because the rate is based on an overlap integral between unperturbed axion and photon wave functions, in analogy to the usual treatment of microwave-cavity haloscopes.

Microscopic theory of photon-correlation spectroscopy in strong-coupling semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schneebeli, Lukas

2009-11-27

While many quantum-optical phenomena are already well established in the atomic systems, like the photon antibunching, squeezing, Bose-Einstein condensation, teleportation, the quantum-optical investigations in semiconductors are still at their beginning. The fascinating results observed in the atomic systems inspire physicists to demonstrate similar quantum-optical effects also in the semiconductor systems. In contrast to quantum optics with dilute atomic gases, the semiconductors exhibit a complicated many-body problem which is dominated by the Coulomb interaction between the electrons and holes and by coupling with the semiconductor environment. This makes the experimental observation of similar quantum-optical effects in semiconductors demanding. However, there are already experiments which have verified nonclassical effects in semiconductors. In particular, experiments have demonstrated that semiconductor quantum dots (QDs) can exhibit the single-photon emission and generation of polarization-entangled photon pairs. In fact, both atom and QD systems, embedded within a microcavity, have become versatile platforms where one can perform systematic quantum-optics investigations as well as development work toward quantum-information applications. Another interesting field is the strong-coupling regime in which the light-matter coupling exceeds both the decoherence rate of the atom or QD and the cavity resulting in a reversible dynamics between light and matter excitations. In the strong-coupling regime, the Jaynes-Cummings ladder is predicted and shows a photon-number dependent splitting of the new dressed strong-coupling states which are the polariton states of the coupled light-matter system. Although the semiclassical effect of the vacuum Rabi splitting has already been observed in QDs, the verification of the quantum-mechanical Jaynes-Cummings splitting is still missing mainly due to the dephasing. Clearly, the observation of the Jaynes-Cummings ladder in QDs

Photonic nanojet super-resolution in immersed ordered assembly of dielectric microspheres

International Nuclear Information System (INIS)

Geints, Y.E.; Zemlyanov, A.A.

2017-01-01

Highlights: • Ordered microassemblies of dielectric microspheres immersed in a transparent matrix exposed to a light wave produce an array of the “photonic nanojets” coupled through the field interference. • “Photonic nanojet” parameters depend on the inter-sphere gap and immersion depth. • Sphere microassembly can produce the jets with the sub-diffraction spatial resolution if the particles are loosely packed and semi-immersed. - Abstract: Specific spatially-localized optical field structure, which is often referred to as a photonic nanojet (PNJ), is formed in the near-field scattering area of non-absorbing dielectric micron-sized particle exposed to an optical radiation. By virtue of the finite-difference time-domain technique we numerically simulate the two-dimensional array of PNJs created by an ordered single-layer microassembly of glass microspheres immersed in a transparent polymer matrix. The behavior of the main PNJ parameters (length, diameter, and intensity) is analyzed subject to the immersion depth of the microparticles and cooperative interference effects of the neighboring microspheres. We show that depending on microassembly configuration, the PNJ quality can be significantly improved; in particular, the PNJ spatial resolution better than λ/5 can be achieved.

Neutron and photon (light) scattering on solitons in the quasi-one-dimensional magnetics

CERN Document Server

Abdulloev, K O

1999-01-01

The general expression we have found earlier for the dynamics form-factor is used to analyse experiments on the neutron and photon (light) scattering by the gas of solitons in quasi-one-dimensional magnetics (Authors)

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication.

Science.gov (United States)

Wang, Huaping; Yu, Gui

2016-07-01

Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Single photon sources with single semiconductor quantum dots

Science.gov (United States)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Slow-light-enhanced upconversion for photovoltaic applications in one-dimensional photonic crystals.

Science.gov (United States)

Johnson, Craig M; Reece, Peter J; Conibeer, Gavin J

2011-10-15

We present an approach to realizing enhanced upconversion efficiency in erbium (Er)-doped photonic crystals. Slow-light-mode pumping of the first Er excited state transition can result in enhanced emission from higher-energy levels that may lead to finite subbandgap external quantum efficiency in crystalline silicon solar cells. Using a straightforward electromagnetic model, we calculate potential field enhancements of more than 18× within he slow-light mode of a one-dimensional photonic crystal and discuss design trade-offs and considerations for photovoltaics.

Femtosecond Pulse Characterization as Applied to One-Dimensional Photonic Band Edge Structures

Science.gov (United States)

Fork, Richard L.; Gamble, Lisa J.; Diffey, William M.

1999-01-01

The ability to control the group velocity and phase of an optical pulse is important to many current active areas of research. Electronically addressable one-dimensional photonic crystals are an attractive candidate to achieve this control. This report details work done toward the characterization of photonic crystals and improvement of the characterization technique. As part of the work, the spectral dependence of the group delay imparted by a GaAs/AlAs photonic crystal was characterized. Also, a first generation an electrically addressable photonic crystal was tested for the ability to electronically control the group delay. The measurement technique, using 100 femtosecond continuum pulses was improved to yield high spectral resolution (1.7 nanometers) and concurrently with high temporal resolution (tens of femtoseconds). Conclusions and recommendations based upon the work done are also presented.

Topological Valley Transport in Two-dimensional Honeycomb Photonic Crystals.

Science.gov (United States)

Yang, Yuting; Jiang, Hua; Hang, Zhi Hong

2018-01-25

Two-dimensional photonic crystals, in analogy to AB/BA stacking bilayer graphene in electronic system, are studied. Inequivalent valleys in the momentum space for photons can be manipulated by simply engineering diameters of cylinders in a honeycomb lattice. The inequivalent valleys in photonic crystal are selectively excited by a designed optical chiral source and bulk valley polarizations are visualized. Unidirectional valley interface states are proved to exist on a domain wall connecting two photonic crystals with different valley Chern numbers. With the similar optical vortex index, interface states can couple with bulk valley polarizations and thus valley filter and valley coupler can be designed. Our simple dielectric PC scheme can help to exploit the valley degree of freedom for future optical devices.

Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

Science.gov (United States)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

Some optical properties of one dimensional annular photonic crystal with plasma frequency

Science.gov (United States)

Pandeya, G. N.; Thapa, Khem B.

2018-05-01

This paper presents the reflection bands, photonic band gaps, of the one-dimensional annul photonic crystal (APC) containing double negative (DNG) metamaterials and air. The proposed annular structure consists of the alternate layers of dispersive DNG material and air immersed in free space. The reflectance properties of the APC by employing the transfer matrix method (TMM) in the cylindrical waves for TE polarization is studied theoretically. In addition of this, we have also studied the effect of plasma frequency on the reflection behavior of the considered annular structure.

Experimental investigation of photonic band gap in one-dimensional photonic crystals with metamaterials

International Nuclear Information System (INIS)

Chen, Yihang; Wang, Xinggang; Yong, Zehui; Zhang, Yunjuan; Chen, Zefeng; He, Lianxing; Lee, P.F.; Chan, Helen L.W.; Leung, Chi Wah; Wang, Yu

2012-01-01

Composite right/left-handed transmission lines with lumped element series capacitors and shunt inductors are used to experimentally realize the one-dimensional photonic crystals composed of single-negative metamaterials. The simulated and experimental results show that a special photonic band gap corresponding to zero-effective-phase (zero-φ eff ) may appear in the microwave regime. In contrast to the Bragg gap, by changing the length ratio of the two component materials, the width and depth of the zero-φ eff gap can be conveniently adjusted while keeping the center frequency constant. Furthermore, the zero-φ eff gap vanishes when both the phase-matching and impedance-matching conditions are satisfied simultaneously. These transmission line structures provide a good way for realizing microwave devices based on the zero-φ eff gap. -- Highlights: ► 1D photonic crystals with metamaterials were investigated experimentally. ► Both Bragg gap and zero-φ eff gap were observed in the microwave regime. ► The width and depth of the zero-φ eff gap were experimentally adjusted. ► Zero-φ eff gap was observed to be close when two match conditions were satisfied.

Experimental investigation of photonic band gap in one-dimensional photonic crystals with metamaterials

Energy Technology Data Exchange (ETDEWEB)

Chen, Yihang, E-mail: eon.chen@yahoo.com.cn [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou (China); Wang, Xinggang [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou (China); Yong, Zehui; Zhang, Yunjuan [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Chen, Zefeng [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou (China); He, Lianxing; Lee, P.F.; Chan, Helen L.W.; Leung, Chi Wah [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Wang, Yu, E-mail: apywang@inet.polyu.edu.hk [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China)

2012-03-19

Composite right/left-handed transmission lines with lumped element series capacitors and shunt inductors are used to experimentally realize the one-dimensional photonic crystals composed of single-negative metamaterials. The simulated and experimental results show that a special photonic band gap corresponding to zero-effective-phase (zero-φ{sub eff}) may appear in the microwave regime. In contrast to the Bragg gap, by changing the length ratio of the two component materials, the width and depth of the zero-φ{sub eff} gap can be conveniently adjusted while keeping the center frequency constant. Furthermore, the zero-φ{sub eff} gap vanishes when both the phase-matching and impedance-matching conditions are satisfied simultaneously. These transmission line structures provide a good way for realizing microwave devices based on the zero-φ{sub eff} gap. -- Highlights: ► 1D photonic crystals with metamaterials were investigated experimentally. ► Both Bragg gap and zero-φ{sub eff} gap were observed in the microwave regime. ► The width and depth of the zero-φ{sub eff} gap were experimentally adjusted. ► Zero-φ{sub eff} gap was observed to be close when two match conditions were satisfied.

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Directory of Open Access Journals (Sweden)

Liwen Sang

2013-08-01

Full Text Available Ultraviolet (UV photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

Exciton absorption of entangled photons in semiconductor quantum wells

Science.gov (United States)

Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team

2013-03-01

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes

Solution-Processed Dielectrics Based on Thickness-Sorted Two-Dimensional Hexagonal Boron Nitride Nanosheets

Energy Technology Data Exchange (ETDEWEB)

Zhu, Jian; Kang, Joohoon; Kang, Junmo; Jariwala, Deep; Wood, Joshua D.; Seo, Jung-Woo T.; Chen, Kan-Sheng; Marks, Tobin J.; Hersam, Mark C.

2015-10-14

Gate dielectrics directly affect the mobility, hysteresis, power consumption, and other critical device metrics in high-performance nanoelectronics. With atomically flat and dangling bond-free surfaces, hexagonal boron nitride (h-BN) has emerged as an ideal dielectric for graphene and related two-dimensional semiconductors. While high-quality, atomically thin h-BN has been realized via micromechanical cleavage and chemical vapor deposition, existing liquid exfoliation methods lack sufficient control over h-BN thickness and large-area film quality, thus limiting its use in solution-processed electronics. Here, we employ isopycnic density gradient ultracentrifugation for the preparation of monodisperse, thickness-sorted h-BN inks, which are subsequently layer-by-layer assembled into ultrathin dielectrics with low leakage currents of 3 × 10–9 A/cm2 at 2 MV/cm and high capacitances of 245 nF/cm2. The resulting solution-processed h-BN dielectric films enable the fabrication of graphene field-effect transistors with negligible hysteresis and high mobilities up to 7100 cm2 V–1 s–1 at room temperature. These h-BN inks can also be used as coatings on conventional dielectrics to minimize the effects of underlying traps, resulting in improvements in overall device performance. Overall, this approach for producing and assembling h-BN dielectric inks holds significant promise for translating the superlative performance of two-dimensional heterostructure devices to large-area, solution-processed nanoelectronics.

The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique

International Nuclear Information System (INIS)

Kevin Jerome Sutherland

2001-01-01

Photonic band gap (PBG) crystals are periodic dielectric structures that manipulate electromagnetic radiation in a manner similar to semiconductor devices manipulating electrons. Whereas a semiconductor material exhibits an electronic band gap in which electrons cannot exist, similarly, a photonic crystal containing a photonic band gap does not allow the propagation of specific frequencies of electromagnetic radiation. This phenomenon results from the destructive Bragg diffraction interference that a wave propagating at a specific frequency will experience because of the periodic change in dielectric permitivity. This gives rise to a variety of optical applications for improving the efficiency and effectiveness of opto-electronic devices. These applications are reviewed later. Several methods are currently used to fabricate photonic crystals, which are also discussed in detail. This research involves a layer-by-layer micro-transfer molding ((mu)TM) and stacking method to create three-dimensional FCC structures of epoxy or titania. The structures, once reduced significantly in size can be infiltrated with an organic gain media and stacked on a semiconductor to improve the efficiency of an electronically pumped light-emitting diode. Photonic band gap structures have been proven to effectively create a band gap for certain frequencies of electro-magnetic radiation in the microwave and near-infrared ranges. The objective of this research project was originally two-fold: to fabricate a three dimensional (3-D) structure of a size scaled to prohibit electromagnetic propagation within the visible wavelength range, and then to characterize that structure using laser dye emission spectra. As a master mold has not yet been developed for the micro transfer molding technique in the visible range, the research was limited to scaling down the length scale as much as possible with the current available technology and characterizing these structures with other methods

The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique

Energy Technology Data Exchange (ETDEWEB)

Sutherland, Kevin Jerome [Iowa State Univ., Ames, IA (United States)

2001-01-01

Photonic band gap (PBG) crystals are periodic dielectric structures that manipulate electromagnetic radiation in a manner similar to semiconductor devices manipulating electrons. Whereas a semiconductor material exhibits an electronic band gap in which electrons cannot exist, similarly, a photonic crystal containing a photonic band gap does not allow the propagation of specific frequencies of electromagnetic radiation. This phenomenon results from the destructive Bragg diffraction interference that a wave propagating at a specific frequency will experience because of the periodic change in dielectric permitivity. This gives rise to a variety of optical applications for improving the efficiency and effectiveness of opto-electronic devices. These applications are reviewed later. Several methods are currently used to fabricate photonic crystals, which are also discussed in detail. This research involves a layer-by-layer micro-transfer molding ({mu}TM) and stacking method to create three-dimensional FCC structures of epoxy or titania. The structures, once reduced significantly in size can be infiltrated with an organic gain media and stacked on a semiconductor to improve the efficiency of an electronically pumped light-emitting diode. Photonic band gap structures have been proven to effectively create a band gap for certain frequencies of electro-magnetic radiation in the microwave and near-infrared ranges. The objective of this research project was originally two-fold: to fabricate a three dimensional (3-D) structure of a size scaled to prohibit electromagnetic propagation within the visible wavelength range, and then to characterize that structure using laser dye emission spectra. As a master mold has not yet been developed for the micro transfer molding technique in the visible range, the research was limited to scaling down the length scale as much as possible with the current available technology and characterizing these structures with other methods.

Photonic band gap materials: Technology, applications and challenges

International Nuclear Information System (INIS)

Johri, M.; Ahmed, Y.A.; Bezboruah, T.

2006-05-01

Last century has been the age of Artificial Materials. One material that stands out in this regard is the semiconductor. The revolution in electronic industry in the 20th century was made possible by the ability of semiconductors to microscopically manipulate the flow of electrons. Further advancement in the field made scientists suggest that the new millennium will be the age of photonics in which artificial materials will be synthesized to microscopically manipulate the flow of light. One of these will be Photonic Band Gap material (PBG). PBG are periodic dielectric structures that forbid propagation of electromagnetic waves in a certain frequency range. They are able to engineer most fundamental properties of electromagnetic waves such as the laws of refraction, diffraction, and emission of light from atoms. Such PBG material not only opens up variety of possible applications (in lasers, antennas, millimeter wave devices, efficient solar cells photo-catalytic processes, integrated optical communication etc.) but also give rise to new physics (cavity electrodynamics, localization, disorder, photon-number-state squeezing). Unlike electronic micro-cavity, optical waveguides in a PBG microchip can simultaneously conduct hundreds of wavelength channels of information in a three dimensional circuit path. In this article we have discussed some aspects of PBG materials and their unusual properties, which provided a foundation for novel practical applications ranging from clinical medicine to information technology. (author)

Problems of high temperature superconductivity in three-dimensional systems

Energy Technology Data Exchange (ETDEWEB)

Geilikman, B T

1973-01-01

A review is given of more recent papers on this subject. These papers have dealt mainly with two-dimensional systems. The present paper extends the treatment to three-dimensional systems, under the following headings: systems with collective electrons of one group and localized electrons of another group (compounds of metals with non-metals-dielectrics, organic substances, undoped semiconductors, molecular crystals); experimental investigations of superconducting compounds of metals with organic compounds, dielectrics, semiconductors, and semi-metals; and systems with two or more groups of collective electrons. Mechanics are considered and models are derived. 86 references.

Plasmon-exciton polaritons in two-dimensional semiconductor/metal interfaces

DEFF Research Database (Denmark)

Gonçalves, P. A. D.; Bertelsen, L. P.; Xiao, Sanshui

2018-01-01

The realization and control of polaritons is of paramount importance in the prospect of novel photonic devices. Here, we investigate the emergence of plasmon-exciton polaritons in hybrid structures consisting of a two-dimensional transition-metal dichalcogenide (TMDC) deposited onto a metal......-coupling regime. Our results demonstrate that Rabi splittings exceeding 100 meV can readily be achieved in planar dielectric/TMDC/metal structures under ambient conditions. We thus believe that this Rapid Communication provides a simple and intuitive picture to tailor strong coupling in plexcitonics...

Second quantization and atomic spontaneous emission inside one-dimensional photonic crystals via a quasinormal-modes approach

International Nuclear Information System (INIS)

Severini, S.; Settimi, A.; Sibilia, C.; Bertolotti, M.; Napoli, A.; Messina, A.

2004-01-01

An extension of the second quantization scheme based on the quasinormal-modes theory to one-dimensional photonic band gap (PBG) structures is discussed. Such structures, treated as double open optical cavities, are studied as part of a compound closed system including the electromagnetic radiative external bath. The electromagnetic field inside the photonic crystal is successfully represented by a new class of modes called quasinormal modes. Starting from this representation we introduce the Feynman's propagator to calculate the decay rate of a dipole inside a PBG structure, related to the density of modes, in the presence of the vacuum fluctuations outside the one-dimensional cavity

A classical-quantum coupling strategy for a hierarchy of one dimensional models for semiconductors

OpenAIRE

Jourdana, Clément; Pietra, Paola; Vauchelet, Nicolas

2014-01-01

We consider one dimensional coupled classical-quantum models for quantum semiconductor device simulations. The coupling occurs in the space variable : the domain of the device is divided into a region with strong quantum effects (quantum zone) and a region where quantum effects are negligible (classical zone). In the classical zone, transport in diffusive approximation is modeled through diffusive limits of the Boltzmann transport equation. This leads to a hierarchy of classical model. The qu...

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Energy Technology Data Exchange (ETDEWEB)

Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Zhang, Meiyun; Long, Shibing [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Lian, Xiaojuan; Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Larcher, Luca [DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Wu, Ernest [IBM Research Division, Essex Junction, Vermont 05452 (United States)

2016-01-04

Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

Fabrication of Ceramic Layer-by-Layer Infrared Wavelength Photonic Band Gap Crystals

Energy Technology Data Exchange (ETDEWEB)

Kang, Henry Hao-Chuan [Iowa State Univ., Ames, IA (United States)

2004-12-19

Photonic band gap (PBG) crystals, also known as photonic crystals, are periodic dielectric structures which form a photonic band gap that prohibit the propagation of electromagnetic (EM) waves of certain frequencies at any incident angles. Photonic crystals have several potential applications including zero-threshold semiconductor lasers, the inhibition of spontaneous emission, dielectric mirrors, and wavelength filters. If defect states are introduced in the crystals, light can be guided from one location to another or even a sharp bending of light in micron scale can be achieved. This generates the potential for optical waveguide and optical circuits, which will contribute to the improvement in the fiber-optic communications and the development of high-speed computers.

Electromagnetic Wave Propagation in Two-Dimensional Photonic Crystals

Energy Technology Data Exchange (ETDEWEB)

Foteinopoulou, Stavroula [Iowa State Univ., Ames, IA (United States)

2003-01-01

In this dissertation, they have undertaken the challenge to understand the unusual propagation properties of the photonic crystal (PC). The photonic crystal is a medium where the dielectric function is periodically modulated. These types of structures are characterized by bands and gaps. In other words, they are characterized by frequency regions where propagation is prohibited (gaps) and regions where propagation is allowed (bands). In this study they focus on two-dimensional photonic crystals, i.e., structures with periodic dielectric patterns on a plane and translational symmetry in the perpendicular direction. They start by studying a two-dimensional photonic crystal system for frequencies inside the band gap. The inclusion of a line defect introduces allowed states in the otherwise prohibited frequency spectrum. The dependence of the defect resonance state on different parameters such as size of the structure, profile of incoming source, etc., is investigated in detail. For this study, they used two popular computational methods in photonic crystal research, the Finite Difference Time Domain method (FDTD) and the Transfer Matrix Method (TMM). The results for the one-dimensional defect system are analyzed, and the two methods, FDTD and TMM, are compared. Then, they shift their attention only to periodic two-dimensional crystals, concentrate on their band properties, and study their unusual refractive behavior. Anomalous refractive phenomena in photonic crystals included cases where the beam refracts on the ''wrong'' side of the surface normal. The latter phenomenon, is known as negative refraction and was previously observed in materials where the wave vector, the electric field, and the magnetic field form a left-handed set of vectors. These materials are generally called left-handed materials (LHM) or negative index materials (NIM). They investigated the possibility that the photonic crystal behaves as a LHM, and how this behavior relates

arXiv Axion-photon conversion caused by dielectric interfaces: quantum field calculation

CERN Document Server

Ioannisian, Ara N.; Millar, Alexander J.; Raffelt, Georg G.

2017-09-05

Axion-photon conversion at dielectric interfaces, immersed in a near-homogeneous magnetic field, is the basis for the dielectric haloscope method to search for axion dark matter. In analogy to transition radiation, this process is possible because the photon wave function is modified by the dielectric layers ("Garibian wave function") and is no longer an eigenstate of momentum. A conventional first-order perturbative calculation of the transition probability between a quantized axion state and these distorted photon states provides the microwave production rate. It agrees with previous results based on solving the classical Maxwell equations for the combined system of axions and electromagnetic fields. We argue that in general the average photon production rate is given by our result, independently of the detailed quantum state of the axion field. Moreover, our result provides a new perspective on axion-photon conversion in dielectric haloscopes because the rate is based on an overlap integral between unpertu...

Magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity

International Nuclear Information System (INIS)

Zhang, Chuanyi; Zhang, Weifeng

2015-01-01

We theoretically study the magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity. A critical magnetic field is obtained, and the bistability appears if a magnetic field is greater than the critical value. For a positive energy detuning of the pump from the bare exciton polaritons, one bistability loop first emerges, then it divides into two loops, and finally one of them vanishes with the increasing magnetic field. This phenomenon originates from the magnetic-field modulated interactions for opposite spins. In the variational process, there are two important effects: one is a logic gate with a small variation of the excitation laser, and the other is a spin texture like skyrmion and this texture is periodic if the energy detuning varies periodically in real space, which is useful for designing the spin-dependent optoelectronic devices. - Highlights: • We study the bistability induced by a magnetic field in a microcavity. • One bistability loop can divide into two, and then the two loops return to one. • A spin texture like skyrmion and logic gate arise in the variation of bistability loop

Bulk-like-phonon polaritons in one-dimensional photonic superlattices

Science.gov (United States)

Gómez-Urrea, H. A.; Duque, C. A.; Mora-Ramos, M. E.

2017-05-01

We investigate the properties of a one-dimensional photonic superlattice made of alternating layers of air and wurtzite aluminum nitride. The Maxwell equations are solved for any admissible values of the angle of incidence by means of the transfer matrix formalism. The band structure of the frequency spectrum is obtained, as well as the density of states and transmittance associated to both the TM and TE modes. The dispersion relations indicate that for oblique incidence and TM modes there is a component of the electric field oriented along the growth direction of the structure that couples with the longitudinal optical phonon oscillations of the aluminum nitride thus leading to the appearance of longitudinal phonon polaritons in the system.

Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

KAUST Repository

Quevedo-López, Manuel Angel Quevedo

2011-06-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

KAUST Repository

Quevedo-Ló pez, Manuel Angel Quevedo; Wondmagegn, Wudyalew T.; Alshareef, Husam N.; Ramí rez-Bon, Rafael; Gnade, Bruce E.

2011-01-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

Additional compound semiconductor nanowires for photonics

Science.gov (United States)

Ishikawa, F.

2016-02-01

GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

Novel dielectric photonic-band-gap resonant cavity loaded in a gyrotron

International Nuclear Information System (INIS)

Chen Xiaoan; Liu Gaofeng; Tang Changjian

2010-01-01

A novel resonant cavity composed of a periodic, multilayer, dielectric photonic crystal is proposed. Using the transfer matrix method and the Bloch theorem for periodic systems, an analysis on the band-gap property of such a structure is made, and the basic electromagnetic property of the photonic-band-gap resonant cavity (PBGC) is preliminarily exhibited. The theoretical studies and the cold cavity simulation results obtained from a high-frequency structure simulator are presented. On the basis of the present research, such a PBGC is quite similar to the two-dimensional PBGC made of triangular lattices of metal rods with a defect at its centre, in which a frequency selectivity is similarly demonstrated. Because of its unique electromagnetic property, the cavity has many promising applications in active and passive devices operating in the millimetre, sub-millimetre, and even THz wave range. As a specific application, the feasibility of substituting the traditional cylindrical resonant cavity loaded in a gyrotron for a dielectric PBGC to achieve a transverse high-order operation is discussed under the consideration of the electromagnetic features of the cavity. The study shows the great potential value of such a cavity for gyrotron devices.

Quantum-correlated two-photon transitions to excitons in semiconductor quantum wells.

Science.gov (United States)

Salazar, L J; Guzmán, D A; Rodríguez, F J; Quiroga, L

2012-02-13

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Science.gov (United States)

Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

2018-03-01

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

Time-dependent Bragg diffraction and short-pulse reflection by one-dimensional photonic crystals

International Nuclear Information System (INIS)

André, Jean-Michel; Jonnard, Philippe

2015-01-01

The time-dependence of the Bragg diffraction by one-dimensional photonic crystals and its influence on the short pulse reflection are studied in the framework of the coupled-wave theory. The indicial response of the photonic crystal is calculated and it appears that it presents a time-delay effect with a transient time conditioned by the extinction length. A numerical simulation is presented for a Bragg mirror in the x-ray domain and a pulse envelope modelled by a sine-squared shape. The potential consequences of the time-delay effect in time-dependent optics of short-pulses are emphasized. (paper)

Accidental degeneracy in photonic bands and topological phase transitions in two-dimensional core-shell dielectric photonic crystals.

Science.gov (United States)

Xu, Lin; Wang, Hai-Xiao; Xu, Ya-Dong; Chen, Huan-Yang; Jiang, Jian-Hua

2016-08-08

A simple core-shell two-dimensional photonic crystal is studied where the triangular lattice symmetry and the C6 point group symmetry give rich physics in accidental touching points of photonic bands. We systematically evaluate different types of accidental nodal points at the Brillouin zone center for transverse-magnetic harmonic modes when the geometry and permittivity of the core-shell material are continuously tuned. The accidental nodal points can have different dispersions and topological properties (i.e., Berry phases). These accidental nodal points can be the critical states lying between a topological phase and a normal phase of the photonic crystal. They are thus very important for the study of topological photonic states. We show that, without breaking time-reversal symmetry, by tuning the geometry of the core-shell material, a phase transition into the photonic quantum spin Hall insulator can be achieved. Here the "spin" is defined as the orbital angular momentum of a photon. We study the topological phase transition as well as the properties of the edge and bulk states and their application potentials in optics.

Massive photon properties in 3D photonic crystals, filled by dielectrics or metals

International Nuclear Information System (INIS)

Gorelik, V S

2009-01-01

The optical properties of 3D photonic crystals-artificial opals, consisting of monosized silica globules-have been investigated. The volume between globules was filled by various dielectrics or metals. The dispersion law of electromagnetic waves of this type of crystal has been obtained. It was shown that the sign of photonic mass in globular photonic crystals may be positive or negative for different points on dispersion curves. The value of the effective mass of photons depends on the refractive index of the substance infiltrated into the globular photonic crystal.

One-dimensional photonic crystals with a planar oriented nematic layer: Temperature and angular dependence of the spectra of defect modes

International Nuclear Information System (INIS)

Arkhipkin, V. G.; Gunyakov, V. A.; Myslivets, S. A.; Gerasimov, V. P.; Zyryanov, V. Ya.; Vetrov, S. Ya.; Shabanov, V. F.

2008-01-01

Transmission spectra of a one-dimensional photonic crystal (PC) formed by two multilayer dielectric mirrors and a planar oriented layer of 5CB nematic liquid crystal (LC) that is sandwiched between these mirrors and serves as a structure defect are investigated experimentally. Specific features of the behavior of the spectrum of defect modes as a function of the angle of incidence of light on the crystal are studied for two polarizations: parallel and perpendicular to the director of the LC; the director either lies in the plane of incidence or is perpendicular to it. It is shown that, for the configurations considered, the maxima of the defect modes shift toward the short-wavelength region as the tilt angle of incidence radiation increases; this tendency is more manifest for the parallel-polarized component, when the director lies in the plane of incidence. In the latter case, the width of the photonic band gap (PBG) appreciably decreases. The temperature dependence of the polarization components of the transmission spectra of a PC is investigated in the case of normal incidence of light. The spectral shift of defect modes due to the variation of the refractive index of the LC at the nematic-isotropic liquid phase transition point is measured. It is shown that, in real PCs, the amplitude of defect modes decreases when approaching the center of the band gap, as well as when the number of layers in the dielectric mirrors increases. Theoretical transmission spectra of the PCs calculated by the method of recurrence relations with regard to the decay of defect modes are in good agreement with experimental data.

Photoluminescence intermittency of semiconductor quantum dots in dielectric environments

Energy Technology Data Exchange (ETDEWEB)

Isaac, A.

2006-08-11

The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)

Soft-Lithographical Fabrication of Three-dimensional Photonic Crystals in the Optical Regime

Energy Technology Data Exchange (ETDEWEB)

Lee, Jae-Hwang [Iowa State Univ., Ames, IA (United States)

2006-01-01

This dissertation describes several projects to realize low-cost and high-quality three-dimensional (3D) microfabrication using non-photolithographic techniques for layer-by-layer photonic crystals. Low-cost, efficient 3D microfabrication is a demanding technique not only for 3D photonic crystals but also for all other scientific areas, since it may create new functionalities beyond the limit of planar structures. However, a novel 3D microfabrication technique for photonic crystals implies the development of a complete set of sub-techniques for basic layer-by-layer stacking, inter-layer alignment, and material conversion. One of the conventional soft lithographic techniques, called microtransfer molding (μTM), was developed by the Whitesides group in 1996. Although μTM technique potentially has a number of advantages to overcome the limit of conventional photolithographic techniques in building up 3D microstructures, it has not been studied intensively after its demonstration. This is mainly because of technical challenges in the nature of layer-by-layer fabrication, such as the demand of very high yield in fabrication. After two years of study on conventional μTM, We have developed an advanced microtransfer molding technique, called two-polymer microtransfer molding (2P-μTM) that shows an extremely high yield in layer-by-layer microfabrication sufficient to produce highly layered microstructures. The use of two different photo-curable prepolymers, a filler and an adhesive, allows for fabrication of layered microstructures without thin films between layers. The capabilities of 2P-μTM are demonstrated by the fabrication of a wide-area 12-layer microstructure with high structural fidelity. Second, we also had to develop an alignment technique. We studied the 1st-order diffracted moire fringes of transparent multilayered structures comprised of irregularly deformed periodic patterns. By a comparison study of the diffracted moire fringe pattern and detailed

Creation of tunable absolute bandgaps in a two-dimensional anisotropic photonic crystal modulated by a nematic liquid crystal

International Nuclear Information System (INIS)

Liu Chenyang

2008-01-01

Photonic crystals (PCs) have many potential applications because of their ability to control light-wave propagation. We have investigated the tunable absolute bandgap in a two-dimensional anisotropic photonic crystal structures modulated by a nematic liquid crystal. The PC structure composed of an anisotropic-dielectric cylinder in the liquid crystal medium is studied by solving Maxwell's equations using the plane wave expansion method. The photonic band structures are found to exhibit absolute bandgaps for the square and triangular lattices. Numerical simulations show that the absolute bandgaps can be continuously tuned in the square and triangular lattices consisting of anisotropic-dielectric cylinders by infiltrating nematic liquid crystals. Such a mechanism of bandgap adjustment should open up a new application for designing components in photonic integrated circuits

Resonant absorption in semiconductor nanowires and nanowire arrays: Relating leaky waveguide modes to Bloch photonic crystal modes

Energy Technology Data Exchange (ETDEWEB)

Fountaine, Katherine T., E-mail: kfountai@caltech.edu [Department of Chemistry and Chemical Engineering, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Whitney, William S. [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Department of Physics, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Atwater, Harry A. [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Department of Applied Physics and Materials Science, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States)

2014-10-21

We present a unified framework for resonant absorption in periodic arrays of high index semiconductor nanowires that combines a leaky waveguide theory perspective and that of photonic crystals supporting Bloch modes, as array density transitions from sparse to dense. Full dispersion relations are calculated for each mode at varying illumination angles using the eigenvalue equation for leaky waveguide modes of an infinite dielectric cylinder. The dispersion relations along with symmetry arguments explain the selectivity of mode excitation and spectral red-shifting of absorption for illumination parallel to the nanowire axis in comparison to perpendicular illumination. Analysis of photonic crystal band dispersion for varying array density illustrates that the modes responsible for resonant nanowire absorption emerge from the leaky waveguide modes.

Semiconductor devices for entangled photon pair generation: a review

Science.gov (United States)

Orieux, Adeline; Versteegh, Marijn A. M.; Jöns, Klaus D.; Ducci, Sara

2017-07-01

Entanglement is one of the most fascinating properties of quantum mechanical systems; when two particles are entangled the measurement of the properties of one of the two allows the properties of the other to be instantaneously known, whatever the distance separating them. In parallel with fundamental research on the foundations of quantum mechanics performed on complex experimental set-ups, we assist today with bourgeoning of quantum information technologies bound to exploit entanglement for a large variety of applications such as secure communications, metrology and computation. Among the different physical systems under investigation, those involving photonic components are likely to play a central role and in this context semiconductor materials exhibit a huge potential in terms of integration of several quantum components in miniature chips. In this article we review the recent progress in the development of semiconductor devices emitting entangled photons. We will present the physical processes allowing the generation of entanglement and the tools to characterize it; we will give an overview of major recent results of the last few years and highlight perspectives for future developments.

Traditional Semiconductors in the Two-Dimensional Limit.

Science.gov (United States)

Lucking, Michael C; Xie, Weiyu; Choe, Duk-Hyun; West, Damien; Lu, Toh-Ming; Zhang, S B

2018-02-23

Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultrathin limit the great majority of traditional binary semiconductors studied (a series of 28 semiconductors) are not only kinetically stable in a two-dimensional double layer honeycomb structure, but more energetically stable than the truncated wurtzite or zinc-blende structures associated with three dimensional bulk. These findings both greatly increase the landscape of two-dimensional materials and also demonstrate that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy

Science.gov (United States)

Lee, Jung Ah; Rok Lim, Young; Jung, Chan Su; Choi, Jun Hee; Im, Hyung Soon; Park, Kidong; Park, Jeunghee; Kim, Gyu Tae

2016-10-01

To develop the advanced electronic devices, the surface/interface of each component must be carefully considered. Here, we investigate the electrical properties of metal-semiconductor nanoscale junction using conductive atomic force microscopy (C-AFM). Single-crystalline CdS, CdSe, and ZnO one-dimensional nanostructures are synthesized via chemical vapor transport, and individual nanobelts (or nanowires) are used to fabricate nanojunction electrodes. The current-voltage (I -V) curves are obtained by placing a C-AFM metal (PtIr) tip as a movable contact on the nanobelt (or nanowire), and often exhibit a resistive switching behavior that is rationalized by the Schottky (high resistance state) and ohmic (low resistance state) contacts between the metal and semiconductor. We obtain the Schottky barrier height and the ideality factor through fitting analysis of the I-V curves. The present nanojunction devices exhibit a lower Schottky barrier height and a higher ideality factor than those of the bulk materials, which is consistent with the findings of previous works on nanostructures. It is shown that C-AFM is a powerful tool for characterization of the Schottky contact of conducting channels between semiconductor nanostructures and metal electrodes.

Testing of defects in Si semiconductor apparatus by using single-photon detection

International Nuclear Information System (INIS)

Zhongliang, Pan; Ling, Chen; Guangju, Chen

2013-01-01

The failure analysis of semiconductor apparatus is very needed for ensuring product quality, which can find several types of defects in the semiconductor apparatus. A new testing method for the defects in Si semiconductor apparatus is presented in this paper, the method makes use of photon emissions to find out the failure positions or failure components by taking advantage of the infrared photo emission characteristics of semiconductor apparatus. These emitted photons carry the information of the apparatus structure. If there are defects in the apparatus, these photons can help in understanding the apparatus properties and detecting the defects. An algorithm for the generation of circuit input vectors are presented in this paper to enhance the strength of the emitted photons for the given components in the semiconductor apparatus. The multiple-valued logic, the static timing analysis and path sensitizations, are used in the algorithm. A lot of experimental results for the Si semiconductor apparatus show that many types of defects such as contact spiking and latchup failure etc., can be detected accurately by the method proposed in this paper

Coherent single-photon absorption by single emitters coupled to one-dimensional nanophotonic waveguides

Energy Technology Data Exchange (ETDEWEB)

Chen Yuntian; Wubs, Martijn; Moerk, Jesper [DTU Fotonik, Department of Photonics Engineering, Oersteds Plads, DK-2800 Kgs Lyngby (Denmark); Koenderink, A Femius, E-mail: yche@fotonik.dtu.dk [Center for Nanophotonics, FOM Institute for Atomic and Molecular Physics (AMOLF), Science Park 104, 1098 XG Amsterdam (Netherlands)

2011-10-15

We study the dynamics of single-photon absorption by a single emitter coupled to a one-dimensional waveguide that simultaneously provides channels for spontaneous emission (SE) decay and a channel for the input photon. We have developed a time-dependent theory that allows us to specify any input single-photon wavepacket guided by the waveguide as the initial condition, and calculate the excitation probability of the emitter, as well as the time evolution of the transmitted and reflected fields. For single-photon wavepackets with a Gaussian spectrum and temporal shape, we obtain analytical solutions for the dynamics of absorption, with maximum atomic excitation {approx}40%. We furthermore propose a terminated waveguide to aid the single-photon absorption. We found that for an emitter placed at an optimal distance from the termination, the maximum atomic excitation due to an incident single-photon wavepacket can exceed 70%. This high value is a direct consequence of the high SE {beta}-factor for emission into the waveguide. Finally, we have also explored whether waveguide dispersion could aid single-photon absorption by pulse shaping. For a Gaussian input wavepacket, we found that the absorption efficiency can be improved by a further 4% by engineering the dispersion. Efficient single-photon absorption by a single emitter has potential applications in quantum communication and quantum computation. (paper)

Current responsivity of semiconductor superlattice THz-photon detectors

DEFF Research Database (Denmark)

Ignatov, Anatoly A.; Jauho, Antti-Pekka

1999-01-01

The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

Flexible photonic-crystal Fano filters based on transferred semiconductor nanomembranes

Energy Technology Data Exchange (ETDEWEB)

Zhou Weidong; Yang Hongjun; Qiang Zexuan; Chen Li; Yang Weiquan; Chuwongin, Santhad; Zhao Deyin [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, TX 76019 (United States); Ma Zhenqiang; Qin Guoxuan; Pang Huiqing, E-mail: wzhou@uta.ed, E-mail: mazq@engr.wisc.ed [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI 53706 (United States)

2009-12-07

Crystalline semiconductor nanomembranes (NMs), which are transferable, stackable, bondable and manufacturable, offer unprecedented opportunities for unique and novel device applications. We report and review here nanophotonic devices based on stacked semiconductor NMs that were built on Si, glass and flexible PET substrates. Photonic-crystal Fano resonance based surface-normal optical filters and broadband reflectors have been demonstrated with unique angle and polarization properties. Such a low temperature NM stacking process can lead to a paradigm shift on silicon photonic integration and inorganic flexible photonics.

Microwave photonics processing controlling the speed of light in semiconductor waveguides

DEFF Research Database (Denmark)

Xue, Weiqi; Chen, Yaohui; Sales, Salvador

2009-01-01

We review the theory of slow and fast light effect in semiconductor waveguides and potential applications of these effects in microwave photonic systems as RF phase shifters. Recent applications as microwave photonic filters is presented. Also, in the presentation more applications like optoelect......We review the theory of slow and fast light effect in semiconductor waveguides and potential applications of these effects in microwave photonic systems as RF phase shifters. Recent applications as microwave photonic filters is presented. Also, in the presentation more applications like...

Hyperentangled photon sources in semiconductor waveguides

DEFF Research Database (Denmark)

Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei

2014-01-01

We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering...

Semiconductor quantum optics with tailored photonic nanostructures

International Nuclear Information System (INIS)

Laucht, Arne

2011-01-01

This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings (ΔE ∝5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of single photon emission into the waveguide. The results obtained during the course of this thesis contribute significantly to

Experiment and simulation on one-dimensional plasma photonic crystals

International Nuclear Information System (INIS)

Zhang, Lin; Ouyang, Ji-Ting

2014-01-01

The transmission characteristics of microwaves passing through one-dimensional plasma photonic crystals (PPCs) have been investigated by experiment and simulation. The PPCs were formed by a series of discharge tubes filled with argon at 5 Torr that the plasma density in tubes can be varied by adjusting the discharge current. The transmittance of X-band microwaves through the crystal structure was measured under different discharge currents and geometrical parameters. The finite-different time-domain method was employed to analyze the detailed properties of the microwaves propagation. The results show that there exist bandgaps when the plasma is turned on. The properties of bandgaps depend on the plasma density and the geometrical parameters of the PPCs structure. The PPCs can perform as dynamical band-stop filter to control the transmission of microwaves within a wide frequency range

Data reading with the aid of one-photon and two-photon luminescence in three-dimensional optical memory devices based on photochromic materials

International Nuclear Information System (INIS)

Akimov, Denis A; Zheltikov, Aleksei M; Koroteev, Nikolai I; Naumov, A N; Fedotov, Andrei B; Magnitskiy, Sergey A; Sidorov-Biryukov, D A; Sokolyuk, N T

1998-01-01

The problem of nondestructive reading of the data stored in the interior of a photochromic sample was analysed. A comparison was made of the feasibility of reading based on one-photon and two-photon luminescence. A model was proposed for the processes of reading the data stored in photochromic molecules with the aid of one-photon and two-photon luminescence. In addition to photochromic transitions, account was taken of the transfer of populations between optically coupled transitions in molecules under the action of the exciting radiation. This model provided a satisfactory description of the kinetics of decay of the coloured form of bulk samples of spiropyran and made it possible to determine experimentally the quantum yield of the reverse photoreaction as well as the two-photon absorption cross section of the coloured form. Measurements were made of the characteristic erasure times of the data stored in a photochromic medium under one-photon and two-photon luminescence reading conditions. It was found that the use of two-photon luminescence made it possible to enhance considerably the contrast and localisation of the optical data reading scheme in three-dimensional optical memory devices. The experimental results were used to estimate the two-photon absorption cross section of the coloured form of a sample of indoline spiropyran in a polymethyl methacrylate matrix. (laser applications and other topics in quantum electronics)

Computational Modeling of Bloch Surface Waves in One-Dimensional Periodic and Aperiodic Multilayer Structures

Science.gov (United States)

Koju, Vijay

Photonic crystals and their use in exciting Bloch surface waves have received immense attention over the past few decades. This interest is mainly due to their applications in bio-sensing, wave-guiding, and other optical phenomena such as surface field enhanced Raman spectroscopy. Improvement in numerical modeling techniques, state of the art computing resources, and advances in fabrication techniques have also assisted in growing interest in this field. The ability to model photonic crystals computationally has benefited both the theoretical as well as experimental communities. It helps the theoretical physicists in solving complex problems which cannot be solved analytically and helps to acquire useful insights that cannot be obtained otherwise. Experimentalists, on the other hand, can test different variants of their devices by changing device parameters to optimize performance before fabrication. In this dissertation, we develop two commonly used numerical techniques, namely transfer matrix method, and rigorous coupled wave analysis, in C++ and MATLAB, and use two additional software packages, one open-source and another commercial, to model one-dimensional photonic crystals. Different variants of one-dimensional multilayered structures such as perfectly periodic dielectric multilayers, quasicrystals, aperiodic multilayer are modeled, along with one-dimensional photonic crystals with gratings on the top layer. Applications of Bloch surface waves, along with new and novel aperiodic dielectric multilayer structures that support Bloch surface waves are explored in this dissertation. We demonstrate a slow light configuration that makes use of Bloch Surface Waves as an intermediate excitation in a double-prism tunneling configuration. This method is simple compared to the more usual techniques for slowing light using the phenomenon of electromagnetically induced transparency in atomic gases or doped ionic crystals operated at temperatures below 4K. Using a semi

Simulation study of one-dimensional self-organized pattern in an atmospheric-pressure dielectric barrier discharge

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiao; Wang, Yanhui, E-mail: wangyh@dlut.edu.cn; Wang, Dezhen, E-mail: wangdez@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

2015-04-15

A two-dimensional fluid model is developed to simulate the one-dimensional self-organized patterns in an atmospheric-pressure dielectric barrier discharge (DBD) driven by sinusoidal voltage in argon. Under certain conditions, by changing applied voltage amplitude, the transversely uniform discharge can evolve into the patterned discharge and the varied self-organized patterned discharges with different numbers and arrangements of discharge channels can be observed. Similar to the uniform atmospheric-pressure DBD, the patterned discharge mode is found to undergo a transition from Townsend regime, sub-glow regime to glow regime with increasing applied voltage amplitude. In the different regimes, charged particles and electric field display different dynamical behaviors. If the voltage amplitude is increased over a certain value, the discharge enters an asymmetric patterned discharge mode, and then transforms into the spatially chaotic state with out-of-order discharge channels. The reason for forming the one-dimensional self-organized pattern is mainly due to the so-called activation-inhibition effect resulting from the local high electron density region appearing in discharge space. Electrode arrangement is the reason that induces local high electron density.

Band gap of two-dimensional fiber-air photonic crystals

Energy Technology Data Exchange (ETDEWEB)

Yang, Shu, E-mail: yangshu5678@163.com; Li, Masha

2016-04-15

A two-dimensional photonic crystal (PC) composed of textile fiber and air is initially discussed in this paper. Textile materials are so called soft materials, which are different from the previous PCs composed of rigid materials. The plain wave expansion method is used to calculate band structure of different PCs by altering component properties or structural parameters. Results show that the dielectric constant of textile fibers, fiber filling ratio and lattice arrangement are effective factors which influence PCs' band gap. Yet lattice constant and fiber diameter make inconspicuous influence on the band gap feature.

Superconducting detectors for semiconductor quantum photonics

International Nuclear Information System (INIS)

Reithmaier, Guenther M.

2015-01-01

In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

Vectorial analysis of dielectric photonic crystal VCSEL

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2009-01-01

A new vertical-cavity surface-emitting laser structure employing a dielectric photonic crystal mirror has been suggested and been numerically investigated. The new structure has a smaller threshold gain, a moderate strength of single-transverse-mode operation, a high quality of emission beam free...

Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

Science.gov (United States)

Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

2015-01-01

Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

Janus droplets: liquid marbles coated with dielectric/semiconductor particles.

Science.gov (United States)

Bormashenko, Edward; Bormashenko, Yelena; Pogreb, Roman; Gendelman, Oleg

2011-01-04

The manufacturing of water droplets wrapped with two different powders, carbon black (semiconductor) and polytetrafluoroethylene (dielectric), is presented. Droplets composed of two hemispheres (Janus droplets) characterized by various physical and chemical properties are reported first. Watermelon-like striped liquid marbles are reported. Janus droplets remained stable on solid and liquid supports and could be activated with an electric field.

Periodic transmission peak splitting in one dimensional disordered photonic structures

Science.gov (United States)

Kriegel, Ilka; Scotognella, Francesco

2016-08-01

In the present paper we present ways to modulate the periodic transmission peaks arising in disordered one dimensional photonic structures with hundreds of layers. Disordered structures in which the optical length nd (n is the refractive index and d the layer thickness) is the same for each layer show regular peaks in their transmission spectra. A proper variation of the optical length of the layers leads to a splitting of the transmission peaks. Notably, the variation of the occurrence of high and low refractive index layers, gives a tool to tune also the width of the peaks. These results are of highest interest for optical application, such as light filtering, where the manifold of parameters allows a precise design of the spectral transmission ranges.

Gap deformation and classical wave localization in disordered two-dimensional photonic-band-gap materials

International Nuclear Information System (INIS)

Lidorikis, E.; Sigalas, M. M.; Economou, E. N.; Soukoulis, C. M.

2000-01-01

By using two ab initio numerical methods, we study the effects that disorder has on the spectral gaps and on wave localization in two-dimensional photonic-band-gap materials. We find that there are basically two different responses depending on the lattice realization (solid dielectric cylinders in air or vice versa), the wave polarization, and the particular form under which disorder is introduced. Two different pictures for the photonic states are employed, the ''nearly free'' photon and the ''strongly localized'' photon. These originate from the two different mechanisms responsible for the formation of the spectral gaps, i.e., multiple scattering and single scatterer resonances, and they qualitatively explain our results. (c) 2000 The American Physical Society

Higher-order photon bunching in a semiconductor microcavity

DEFF Research Database (Denmark)

Assmann, M.; Veit, F.; Bayer, M.

2009-01-01

Quantum mechanically indistinguishable particles such as photons may show collective behavior. Therefore, an appropriate description of a light field must consider the properties of an assembly of photons instead of independent particles. We have studied multiphoton correlations up to fourth order...... in the single-mode emission of a semiconductor microcavity in the weak and strong coupling regimes. The counting statistics of single photons were recorded with picosecond time resolution, allowing quantitative measurement of the few-photon bunching inside light pulses. Our results show bunching behavior...

Two photon versus one photon fluorescence excitation in whispering gallery mode microresonators

International Nuclear Information System (INIS)

Pastells, Carme; Marco, M.-Pilar; Merino, David; Loza-Alvarez, Pablo; Pasquardini, Laura; Lunelli, Lorenzo; Pederzolli, Cecilia; Daldosso, Nicola; Farnesi, Daniele; Berneschi, Simone; Righini, Giancarlo C.; Quercioli, Franco; Nunzi Conti, Gualtiero; Soria, Silvia

2016-01-01

We investigate the feasibility of both one photon and two photon fluorescence excitation using whispering gallery mode microresonators. We report the linear and non linear fluorescence real-time detection of labeled IgG covalently bonded to the surface of a silica whispering gallery mode resonator (WGMR). The immunoreagents have been immobilized onto the surface of the WGMR sensor after being activated with an epoxy silane and an orienting layer. The developed immunosensor presents great potential as a robust sensing device for fast and early detection of immunoreactions. We also investigate the potential of microbubbles as nonlinear enhancement platform. The dyes used in these studies are dylight800, tetramethyl rhodamine isothiocyanate, rhodamine 6G and fluorescein. All measurements were performed in a modified confocal microscope. - Highlights: • One photon fluorescence overlaps with the semiconductor pump laser gain bandwidth. • We report on the feasibility to excite two photon fluorescence in microbubble resonators. • Our functionalization process maintains a good quality factor of the microresonator.

Two photon versus one photon fluorescence excitation in whispering gallery mode microresonators

Energy Technology Data Exchange (ETDEWEB)

Pastells, Carme; Marco, M.-Pilar [Nanobiotechnology for Diagnostics Group (Nb4Dg), IQAC-CSIC, 08034 Barcelona (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina, 08034 Barcelona (Spain); Merino, David; Loza-Alvarez, Pablo [ICFO-Institut de Ciències Fotòniques, Castelldefels, 08860 Barcelona (Spain); Pasquardini, Laura [Fondazione Bruno Kessler, 38123 Povo, TN (Italy); Lunelli, Lorenzo [Fondazione Bruno Kessler, 38123 Povo, TN (Italy); IBF-CNR, 38123 Povo, TN (Italy); Pederzolli, Cecilia [Fondazione Bruno Kessler, 38123 Povo, TN (Italy); Daldosso, Nicola [Department of Computer Science, University of Verona, Strada le Grazie 15, 37134 Verona (Italy); Farnesi, Daniele [CNR-IFAC “Nello Carrara” Institute of Applied Physics, 50019 Sesto Fiorentino, FI (Italy); Museo Storico della Fisica e Centro Studi e Ricerche “E. Fermi”, 00184 Roma (Italy); Berneschi, Simone [CNR-IFAC “Nello Carrara” Institute of Applied Physics, 50019 Sesto Fiorentino, FI (Italy); Righini, Giancarlo C. [CNR-IFAC “Nello Carrara” Institute of Applied Physics, 50019 Sesto Fiorentino, FI (Italy); Museo Storico della Fisica e Centro Studi e Ricerche “E. Fermi”, 00184 Roma (Italy); Quercioli, Franco [CNR-INO National Institute of Optics, Sesto Fiorentino, FI (Italy); Nunzi Conti, Gualtiero [CNR-IFAC “Nello Carrara” Institute of Applied Physics, 50019 Sesto Fiorentino, FI (Italy); Soria, Silvia, E-mail: s.soria@ifac.cnr.it [CNR-IFAC “Nello Carrara” Institute of Applied Physics, 50019 Sesto Fiorentino, FI (Italy)

2016-02-15

We investigate the feasibility of both one photon and two photon fluorescence excitation using whispering gallery mode microresonators. We report the linear and non linear fluorescence real-time detection of labeled IgG covalently bonded to the surface of a silica whispering gallery mode resonator (WGMR). The immunoreagents have been immobilized onto the surface of the WGMR sensor after being activated with an epoxy silane and an orienting layer. The developed immunosensor presents great potential as a robust sensing device for fast and early detection of immunoreactions. We also investigate the potential of microbubbles as nonlinear enhancement platform. The dyes used in these studies are dylight800, tetramethyl rhodamine isothiocyanate, rhodamine 6G and fluorescein. All measurements were performed in a modified confocal microscope. - Highlights: • One photon fluorescence overlaps with the semiconductor pump laser gain bandwidth. • We report on the feasibility to excite two photon fluorescence in microbubble resonators. • Our functionalization process maintains a good quality factor of the microresonator.

Wave propagation inside one-dimensional photonic crystals with single-negative materials

International Nuclear Information System (INIS)

Wang Ligang; Chen Hong; Zhu Shiyao

2006-01-01

The propagation of light waves in one-dimensional photonic crystals (1DPCs) composed of alternating layers of two kinds of single-negative materials is investigated theoretically. The phase velocity is negative when the frequency of the light wave is smaller than the certain critical frequency ω cr , while the Poynting vector is always positive. At normal incidence, such 1DPCs may act as equivalent left-handed materials. At the inclined incidence, the effective wave vectors inside such 1DPCs do refract negatively, while the effective energy flows do not refract negatively. Therefore, at the inclined incidence, the 1DPCs are not equivalent to the left-handed materials

Periodically modulated single-photon transport in one-dimensional waveguide

Science.gov (United States)

Li, Xingmin; Wei, L. F.

2018-03-01

Single-photon transport along a one-dimension waveguide interacting with a quantum system (e.g., two-level atom) is a very useful and meaningful simplified model of the waveguide-based optical quantum devices. Thus, how to modulate the transport of the photons in the waveguide structures by adjusting certain external parameters should be particularly important. In this paper, we discuss how such a modulation could be implemented by periodically driving the energy splitting of the interacting atom and the atom-photon coupling strength. By generalizing the well developed time-independent full quantum mechanical theory in real space to the time-dependent one, we show that various sideband-transmission phenomena could be observed. This means that, with these modulations the photon has certain probabilities to transmit through the scattering atom in the other energy sidebands. Inversely, by controlling the sideband transmission the periodic modulations of the single photon waveguide devices could be designed for the future optical quantum information processing applications.

Photon detector composed of metal and semiconductor nanoparticles

International Nuclear Information System (INIS)

Takahashi, Atsuo; Minoura, Norihiko; Karube, Isao

2005-01-01

Applying the function of the single electron transistor, a novel photon detector consisting of a self-assembled structure of metal and semiconductor nanoparticles and an organic insulating layer was developed. It showed coulomb blockade behavior under dark conditions and remarkable increase in current corresponding to light intensity under light irradiation. Ultraweak photon emission of about 600 counts per second in the ultraviolet region could be detected at room temperature by this photon counter

Modelling and design of complete photonic band gaps in two ...

Indian Academy of Sciences (India)

In this paper, we investigate the existence and variation of complete photonic band gap size with the introduction of asymmetry in the constituent dielectric rods with honeycomb lattices in two-dimensional photonic crystals (PhC) using the plane-wave expansion (PWE) method. Two examples, one consisting of elliptical rods ...

Semiconductor quantum optics with tailored photonic nanostructures

Energy Technology Data Exchange (ETDEWEB)

Laucht, Arne

2011-06-15

This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings ({delta}E<{proportional_to}5 meV) and a multi-exciton-based, Auger-like process for larger detunings ({delta}E >{proportional_to}5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of

Rapid Three-Dimensional Printing in Water Using Semiconductor-Metal Hybrid Nanoparticles as Photoinitiators.

Science.gov (United States)

Pawar, Amol Ashok; Halivni, Shira; Waiskopf, Nir; Ben-Shahar, Yuval; Soreni-Harari, Michal; Bergbreiter, Sarah; Banin, Uri; Magdassi, Shlomo

2017-07-12

Additive manufacturing processes enable fabrication of complex and functional three-dimensional (3D) objects ranging from engine parts to artificial organs. Photopolymerization, which is the most versatile technology enabling such processes through 3D printing, utilizes photoinitiators that break into radicals upon light absorption. We report on a new family of photoinitiators for 3D printing based on hybrid semiconductor-metal nanoparticles. Unlike conventional photoinitiators that are consumed upon irradiation, these particles form radicals through a photocatalytic process. Light absorption by the semiconductor nanorod is followed by charge separation and electron transfer to the metal tip, enabling redox reactions to form radicals in aerobic conditions. In particular, we demonstrate their use in 3D printing in water, where they simultaneously form hydroxyl radicals for the polymerization and consume dissolved oxygen that is a known inhibitor. We also demonstrate their potential for two-photon polymerization due to their giant two-photon absorption cross section.

Attractive electron correlation in wide band gap semiconductors by electron-photon interaction

International Nuclear Information System (INIS)

Takeda, Hiroyuki; Yoshino, Katsumi

2004-01-01

We theoretically demonstrate attractive electron correlation in wide band gap semiconductors by electron-photon interaction. At low temperature, wavevectors of electromagnetic waves absorbed in wide band gap semiconductors cannot be neglected for wavevectors of electron waves; that is, electromagnetic waves affect the movements of electrons. In particular, attractive interaction occurs between two electrons when one electron changes from a valence band to a conduction band and the other electron changes from a conduction band to a valence band

Electric-field-tunable defect mode in one-dimensional photonic crystal operating in the terahertz range

Czech Academy of Sciences Publication Activity Database

Skoromets, Volodymyr; Němec, Hynek; Kadlec, Christelle; Fattakhova-Rohlfing, D.; Kužel, Petr

2013-01-01

Roč. 102, č. 24 (2013), "241106-1"-"241106-5" ISSN 0003-6951 R&D Projects: GA ČR GA13-12386S Grant - others:AVČR(CZ) M100101218 Institutional support: RVO:68378271 Keywords : terahertz spectroscopy * strontium titanate * dielectric properties * photonic crystal Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.515, year: 2013

Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

International Nuclear Information System (INIS)

Besleaga, C.; Stan, G.E.; Pintilie, I.; Barquinha, P.; Fortunato, E.; Martins, R.

2016-01-01

Highlights: • TFTs based on IGZO channel semiconductor and AlN gate dielectric were fabricated. • AlN films – a viable and cheap gate dielectric alternative for transparent TFTs. • Influence of gate dielectric layer thickness on TFTs electrical characteristics. • No degradation of AlN gate dielectric was observed during devices stress testing. - Abstract: The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium–gallium–zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium–gallium–zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

Energy Technology Data Exchange (ETDEWEB)

Besleaga, C.; Stan, G.E.; Pintilie, I. [National Institute of Materials Physics, 405A Atomistilor, 077125 Magurele-Ilfov (Romania); Barquinha, P.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Martins, R., E-mail: rm@uninova.pt [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

2016-08-30

Highlights: • TFTs based on IGZO channel semiconductor and AlN gate dielectric were fabricated. • AlN films – a viable and cheap gate dielectric alternative for transparent TFTs. • Influence of gate dielectric layer thickness on TFTs electrical characteristics. • No degradation of AlN gate dielectric was observed during devices stress testing. - Abstract: The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium–gallium–zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium–gallium–zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

Semiconductor/dielectric interface engineering and characterization

Science.gov (United States)

Lucero, Antonio T.

The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

Dispersive photonic crystals from the plane wave method

Energy Technology Data Exchange (ETDEWEB)

Guevara-Cabrera, E.; Palomino-Ovando, M.A. [Facultad de Ciencias Físico Matemáticas, Benemérita Universidad Autónoma de Puebla, Apdo. Post. 165, Puebla, Pue. 72000, México (Mexico); Flores-Desirena, B., E-mail: bflores@fcfm.buap.mx [Facultad de Ciencias Físico Matemáticas, Benemérita Universidad Autónoma de Puebla, Apdo. Post. 165, Puebla, Pue. 72000, México (Mexico); Gaspar-Armenta, J.A. [Departamento de Investigación en Física de la Universidad de Sonora Apdo, Post 5-088, Hermosillo Sonora 83190, México (Mexico)

2016-03-01

Nowadays photonic crystals are widely used in many different applications. One of the most used methods to compute their band structure is the plane wave method (PWM). However, it can only be applied directly to non-dispersive media and be extended to systems with a few model dielectric functions. We explore an extension of the PWM to photonic crystals containing dispersive materials, that solves an eigenvalue equation for the Bloch wave vectors. First we compare our calculation with analytical results for one dimensional photonic crystals containing Si using experimental values of its optical parameters, and obtainig very well agreement, even for the spectrum region with strong absorption. Then, using the same method, we computed the band structure for a two dimensional photonic crystal without absorption, formed by an square array of MgO cylinders in air. The optical parameters for MgO were modeled with the Lorentz dielectric function. Finally, we studied an array of MgO cylinders in a metal, using Drude model without absorption, for the metal dielectric function. For this last case, we study the gap–midgap ratio as a function of the filling fraction for both the square and triangular lattice. The gap–midgap ratio is larger for the triangular lattice, with a maximum value of 10% for a filling fraction of 0.6. Our results show that the method can be applied to dispersive materials, and then to a wide range of applications where photonic crystals can be used.

Optics of dielectric microstructures

DEFF Research Database (Denmark)

Søndergaard, Thomas

2002-01-01

From the work carried out within the ph.d. project two topics have been selected for this thesis, namely emission of radiation by sources in dielectric microstructures, and planar photonic crystal waveguides. The work done within the first topic, emission of radiation by sources in dielectric...... microstructures, will be presented in the part I of this thesis consisting of the chapters 2-5. An introductions is given in chapter 2. In part I three methods are presented for calculating spontaneous and classical emission from sources in dielectric microstructures. The first method presented in chapter 3...... is based on the Fermi Golden Rule, and spontaneous emission from emitters in a passive dielectric microstructure is calculated by summing over the emission into each electromagnetic mode of the radiation field. This method is applied to investigate spontaneous emission in a two-dimensional photonic crystal...

Effective photons in weakly absorptive dielectric media and the Beer–Lambert–Bouguer law

International Nuclear Information System (INIS)

Judge, A C; Brownless, J S; Martijn de Sterke, C; Bhat, N A R; Sipe, J E; Steel, M J

2014-01-01

We derive effective photon modes that facilitate an intuitive and convenient picture of photon dynamics in a structured Kramers–Kronig dielectric in the limit of weak absorption. Each mode is associated with a mode field distribution that includes the effects of both material and structural dispersion, and an effective line-width that determines the temporal decay rate of the photon. These results are then applied to obtain an expression for the Beer–Lambert–Bouguer law absorption coefficient for unidirectional propagation in structured media consisting of dispersive, weakly absorptive dielectric materials

Two-dimensional topological photonics

Science.gov (United States)

Khanikaev, Alexander B.; Shvets, Gennady

2017-12-01

Originating from the studies of two-dimensional condensed-matter states, the concept of topological order has recently been expanded to other fields of physics and engineering, particularly optics and photonics. Topological photonic structures have already overturned some of the traditional views on wave propagation and manipulation. The application of topological concepts to guided wave propagation has enabled novel photonic devices, such as reflection-free sharply bent waveguides, robust delay lines, spin-polarized switches and non-reciprocal devices. Discrete degrees of freedom, widely used in condensed-matter physics, such as spin and valley, are now entering the realm of photonics. In this Review, we summarize the latest advances in this highly dynamic field, with special emphasis on the experimental work on two-dimensional photonic topological structures.

The optical transmission characteristics in metallic photonic crystals

International Nuclear Information System (INIS)

Aly, Arafa H.; Elsayed, Hussein A.; Hamdy, Hany S.

2010-01-01

We theoretically studied electromagnetic wave propagation in a one-dimensional metal/dielectric photonic crystal (1D MDPC) consisting of alternating metallic and dielectric materials by using the transfer matrix method in visible and infrared regions. We have investigated the photonic band gap by using four kinds of metals: silver, lithium, gold and copper. We discuss the details of the calculated results in terms of the thickness of the metallic layer and different kinds of metals, and the plasma frequency. Our results have a potential for applications in optical devices because it is easy and cheap to manufacture.

Tunable photonic crystals with partial bandgaps from blue phase colloidal crystals and dielectric-doped blue phases.

Science.gov (United States)

Stimulak, Mitja; Ravnik, Miha

2014-09-07

Blue phase colloidal crystals and dielectric nanoparticle/polymer doped blue phases are demonstrated to combine multiple components with different symmetries in one photonic material, creating a photonic crystal with variable and micro-controllable photonic band structure. In this composite photonic material, one contribution to the band structure is determined by the 3D periodic birefringent orientational profile of the blue phases, whereas the second contribution emerges from the regular array of the colloidal particles or from the dielectric/nanoparticle-doped defect network. Using the planewave expansion method, optical photonic bands of the blue phase I and II colloidal crystals and related nanoparticle/polymer doped blue phases are calculated, and then compared to blue phases with no particles and to face-centred-cubic and body-centred-cubic colloidal crystals in isotropic background. We find opening of local band gaps at particular points of Brillouin zone for blue phase colloidal crystals, where there were none in blue phases without particles or dopants. Particle size and filling fraction of the blue phase defect network are demonstrated as parameters that can directly tune the optical bands and local band gaps. In the blue phase I colloidal crystal with an additionally doped defect network, interestingly, we find an indirect total band gap (with the exception of one point) at the entire edge of SC irreducible zone. Finally, this work demonstrates the role of combining multiple - by symmetry - differently organised components in one photonic crystal material, which offers a novel approach towards tunable soft matter photonic materials.

Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

Science.gov (United States)

Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

2018-01-01

We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

Photon management in two-dimensional disordered media.

Science.gov (United States)

Vynck, Kevin; Burresi, Matteo; Riboli, Francesco; Wiersma, Diederik S

2012-12-01

Elaborating reliable and versatile strategies for efficient light coupling between free space and thin films is of crucial importance for new technologies in energy efficiency. Nanostructured materials have opened unprecedented opportunities for light management, notably in thin-film solar cells. Efficient coherent light trapping has been accomplished through the careful design of plasmonic nanoparticles and gratings, resonant dielectric particles and photonic crystals. Alternative approaches have used randomly textured surfaces as strong light diffusers to benefit from their broadband and wide-angle properties. Here, we propose a new strategy for photon management in thin films that combines both advantages of an efficient trapping due to coherent optical effects and broadband/wide-angle properties due to disorder. Our approach consists of the excitation of electromagnetic modes formed by multiple light scattering and wave interference in two-dimensional random media. We show, by numerical calculations, that the spectral and angular responses of thin films containing disordered photonic patterns are intimately related to the in-plane light transport process and can be tuned through structural correlations. Our findings, which are applicable to all waves, are particularly suited for improving the absorption efficiency of thin-film solar cells and can provide a new approach for high-extraction-efficiency light-emitting diodes.

High-resolution three-dimensional mapping of semiconductor dopant potentials

DEFF Research Database (Denmark)

Twitchett, AC; Yates, TJV; Newcomb, SB

2007-01-01

Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combin......Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how...... a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution....

Omnidirectional photonic band gap in magnetron sputtered TiO{sub 2}/SiO{sub 2} one dimensional photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Jena, S., E-mail: shuvendujena9@gmail.com [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Tokas, R.B.; Sarkar, P. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Misal, J.S.; Maidul Haque, S.; Rao, K.D. [Photonics & Nanotechnology Section, BARC-Vizag, Autonagar, Atomic & Molecular Physics Division, Bhabha Atomic Research Centre facility, Visakhapatnam 530 012 (India); Thakur, S.; Sahoo, N.K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

2016-01-29

One dimensional photonic crystal (1DPC) of TiO{sub 2}/SiO{sub 2} multilayer has been fabricated by sequential asymmetric bipolar pulsed dc magnetron sputtering of TiO{sub 2} and radio frequency magnetron sputtering of SiO{sub 2} to achieve wide omnidirectional photonic band in the visible region. The microstructure and optical response of the TiO{sub 2}/SiO{sub 2} photonic crystal have been characterized by atomic force microscopy, scanning electron microscopy and spectrophotometry respectively. The surface of the photonic crystal is very smooth having surface roughness of 2.6 nm. Reflection and transmission spectra have been measured in the wavelength range 300 to 1000 nm for both transverse electric and transverse magnetic waves. Wide high reflection photonic band gap (∆ λ = 245 nm) in the visible and near infrared regions (592–837 nm) at normal incidence has been achieved. The measured photonic band gap (PBG) is found well matching with the calculated photonic band gap of an infinite 1DPC. The experimentally observed omnidirectional photonic band 592–668 nm (∆ λ = 76 nm) in the visible region with band to mid-band ratio ∆ λ/λ = 12% for reflectivity R > 99% over the incident angle range of 0°–70° is found almost matching with the calculated omnidirectional PBG. The omnidirectional reflection band is found much wider as compared to the values reported in literature so far in the visible region for TiO{sub 2}/SiO{sub 2} periodic photonic crystal. - Highlights: • TiO{sub 2}/SiO{sub 2} 1DPC has been fabricated using magnetron sputtering technique. • Experimental optical response is found good agreement with simulation results. • Wide omnidirectional photonic band in the visible spectrum has been achieved.

Two-Dimensional Charge Transport in Disordered Organic Semiconductors

NARCIS (Netherlands)

Brondijk, J. J.; Roelofs, W. S. C.; Mathijssen, S. G. J.; Shehu, A.; Cramer, T.; Biscarini, F.; Blom, P. W. M.; de Leeuw, D. M.

2012-01-01

We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides

Modeling of gain saturation effects in active semiconductor photonic crystal waveguides

DEFF Research Database (Denmark)

Chen, Yaohui; Mørk, Jesper

2012-01-01

In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated.......In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated....

Dielectric laser acceleration of non-relativistic electrons at a photonic structure

Energy Technology Data Exchange (ETDEWEB)

Breuer, John

2013-08-29

This thesis reports on the observation of dielectric laser acceleration of non-relativistic electrons via the inverse Smith-Purcell effect in the optical regime. Evanescent modes in the vicinity of a periodic grating structure can travel at the same velocity as the electrons along the grating surface. A longitudinal electric field component is used to continuously impart momentum onto the electrons. This is only possible in the near-field of a suitable photonic structure, which means that the electron beam has to pass the structure within about one wavelength. In our experiment we exploit the third spatial harmonic of a single fused silica grating excited by laser pulses derived from a Titanium:sapphire oscillator and accelerate non-relativistic 28 keV electrons. We measure a maximum energy gain of 280 eV, corresponding to an acceleration gradient of 25 MeV/m, already comparable with state-of-the-art radio-frequency linear accelerators. To experience this acceleration gradient the electrons approach the grating closer than 100 nm. We present the theory behind grating-based particle acceleration and discuss simulation results of dielectric laser acceleration in the near-field of photonic grating structures, which is excited by near-infrared laser light. Our measurements show excellent agreement with our simulation results and therefore confirm the direct acceleration with the light field. We further discuss the acceleration inside double grating structures, dephasing effects of non-relativistic electrons as well as the space charge effect, which can limit the attainable peak currents of these novel accelerator structures. The photonic structures described in this work can be readily concatenated and therefore represent a scalable realization of dielectric laser acceleration. Furthermore, our structures are directly compatible with the microstructures used for the acceleration of relativistic electrons demonstrated in parallel to this work by our collaborators in

Axion-photon conversion in space and in low symmetrical dielectric crystals

International Nuclear Information System (INIS)

Gorelik, V S

2016-01-01

The opportunities of axions detection as the result of axion-photon conversion processes in the space and in low symmetrical dielectric crystals are discussed. In accordance with the modern theory predictions, axions are pseudoscalar vacuum particles having very small (0.001-1.0 meV) rest energy. The possibility of axions conversion into photons and vice-versa processes in vacuum at the presence of outer magnetic field has been analyzed before. Pseudoscalar (axion type) modes are existing in some types of crystals. Polar pseudoscalar lattice and exciton modes in low symmetrical crystals are strongly interacted with axions. In this work, optical excitation of axion-type modes in low symmetrical crystals is proposed for observation of axion - photon conversion processes. Instead of outer magnetic field, the crystalline field of such crystals may be used. The experimental schemes for axion-photon conversion processes observation with recording the secondary emission of luminescence, infrared or Stimulated Raman Scattering in some dielectric crystals are discussed. (paper)

Photonic Bandgap (PBG) Shielding Technology

Science.gov (United States)

Bastin, Gary L.

2007-01-01

Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

Electromagnetic-field amplification in finite one-dimensional photonic crystals

International Nuclear Information System (INIS)

Gorelik, V. S.; Kapaev, V. V.

2016-01-01

The electromagnetic-field distribution in a finite one-dimensional photonic crystal is studied using the numerical solution of Maxwell’s equations by the transfer-matrix method. The dependence of the transmission coefficient T on the period d (or the wavelength λ) has the characteristic form with M–1 (M is the number of periods in the structure) maxima with T = 1 in the allowed band of an infinite crystal and zero values in the forbidden band. The field-modulus distribution E(x) in the structure for parameters that correspond to the transmission maxima closest to the boundaries of forbidden bands has maxima at the center of the structure; the value at the maximum considerably exceeds the incident-field strength. For the number of periods M ~ 50, more than an order of magnitude increase in the field amplification is observed. The numerical results are interpreted with an analytic theory constructed by representing the solution in the form of a linear combination of counterpropagating Floquet modes in a periodic structure.

Fabrication and optical characteristics of silicon-based two-dimensional wavelength division multiplexing splitter with photonic crystal directional waveguide couplers

International Nuclear Information System (INIS)

Liu, Cheng-Yang

2011-01-01

Photonic crystals have many potential applications because of their ability to control lightwave propagation. We report on the fabrication and optical properties of quasi-two-dimensional photonic crystals with triangular lattice of dielectric rods in air. Rod-type photonic crystal structures were fabricated in silicon by electron beam lithography and dry-etching techniques. Wavelength division multiplexing splitters were fabricated from two-dimensional photonic crystal directional waveguide couplers. Transmission spectra were measured and device operation was shown to be in agreement with theoretical calculations. The splitters can be used in visible light region. Such an approach to photonic element systems should enable new applications for designing components in photonic integrated circuits. -- Highlights: → We report the fabrication and optical properties of rod-type photonic crystal. → The splitter was fabricated by electron beam lithography and dry-etching techniques. → The splitter was composed of directional waveguide couplers. → Measured transmission spectra are in agreement with theoretical calculations. → The splitters can be used in visible light region.

Application of structural symmetries in the plane-wave-based transfer-matrix method for three-dimensional photonic crystal waveguides

International Nuclear Information System (INIS)

Li Zhiyuan; Ho Kaiming

2003-01-01

The plane-wave-based transfer-matrix method (TMM) exhibits a peculiar advantage of being capable of solving eigenmodes involved in an infinite photonic crystal and electromagnetic (EM) wave propagation in finite photonic crystal slabs or even semi-infinite photonic crystal structures within the same theoretical framework. In addition, this theoretical approach can achieve much improved numerical convergency in solution of photonic band structures than the conventional plane-wave expansion method. In this paper we employ this TMM in combination with a supercell technique to handle two important kinds of three-dimensional (3D) photonic crystal waveguide structures. The first one is waveguides created in a 3D layer-by-layer photonic crystal that possesses a complete band gap, the other more popular one is waveguides built in a two-dimensional photonic crystal slab. These waveguides usually have mirror-reflection symmetries in one or two directions perpendicular to their axis. We have taken advantage of these structural symmetries to reduce the numerical burden of the TMM solution of the guided modes. The solution to the EM problems under these mirror-reflection symmetries in both the real space and the plane-wave space is discussed in a systematic way and in great detail. Both the periodic boundary condition and the absorbing boundary condition are employed to investigate structures with or without complete 3D optical confinement. The fact that the EM field components investigated in the TMM are collinear with the symmetric axes of the waveguide brings great convenience and clarity in exploring the eigenmode symmetry in both the real space and the plane-wave space. The classification of symmetry involved in the guided modes can help people to better understand the coupling of the photonic crystal waveguides with external channels such as dielectric slab or wire waveguides

Influence of filling fraction on the defect mode and gap closing of a one-dimensional photonic crystal: An analytical approach

International Nuclear Information System (INIS)

Ansari, N.; Tehranchi, M.M.

2010-01-01

Study of the optical properties of the one-dimensional defective photonic crystals using the gap map is improving through the emergence of new analytical methods, which are easy and without any physical restrictions. Gap map is able to monitor the changes in the defect mode frequencies and photonic band gap regions as a function of filling fractions, and all visible spectra in a single graphic presentation. In this paper, by utilizing a novel technique based on Green's function method for analyzing the defect modes, the gap map and gap closing point of a one-dimensional defective photonic crystal have been demonstrated. This method enables study of the defect modes inside the omnidirectional band gap, which is an important object in the designing of the optical filters. Moreover, as a designing criterion, obtaining the gap closing points inside the gap map enables finding of some filling fraction intervals that each one contains several distinct omnidirectional band gaps simultaneously, using a single photonic crystal. This method has been employed for the design of an optical filter at 1.3 and 1.55 μm, which is applicable for telecommunication.

Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

Science.gov (United States)

Kim, Janghyuk; Mastro, Michael A; Tadjer, Marko J; Kim, Jihyun

2017-06-28

β-gallium oxide (β-Ga 2 O 3 ) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga 2 O 3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga 2 O 3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.

Three-Dimensional Self-Assembled Photonic Crystal Waveguide

Science.gov (United States)

Baek, Kang-Hyun

Photonic crystals (PCs), two- or three-dimensionally periodic, artificial, and dielectric structures, have a specific forbidden band for electromagnetic waves, referred to as photonic bandgap (PBG). The PBG is analogous to the electronic bandgap in natural crystal structures with periodic atomic arrangement. A well-defined and embedded planar, line, or point defect within the PCs causes a break in its structural periodicity, and introduces a state in the PBG for light localization. It offers various applications in integrated optics and photonics including optical filters, sharp bending light guides and very low threshold lasers. Using nanofabrication processes, PCs of the 2-D slab-type and 3-D layer-by-layer structures have been investigated widely. Alternatively, simple and low-cost self-assembled PCs with full 3-D PBG, inverse opals, have been suggested. A template with face centered cubic closed packed structure, opal, may initially be built by self-assembly of colloidal spheres, and is selectively removed after infiltrating high refractive index materials into the interstitials of spheres. In this dissertation, the optical waveguides utilizing the 3-D self-assembled PCs are discussed. The waveguides were fabricated by microfabrication technology. For high-quality colloidal silica spheres and PCs, reliable synthesis, self-assembly, and characterization techniques were developed. Its theoretical and experimental demonstrations are provided and correlated. They suggest that the self-assembled PCs with PBG are feasible for the applications in integrated optics and photonics.

Optical trapping of metal-dielectric nanoparticle clusters near photonic crystal microcavities.

Science.gov (United States)

Mejia, Camilo A; Huang, Ningfeng; Povinelli, Michelle L

2012-09-01

We predict the formation of optically trapped, metal-dielectric nanoparticle clusters above photonic crystal microcavities. We determine the conditions on particle size and position for a gold particle to be trapped above the microcavity. We then show that strong field redistribution and enhancement near the trapped gold nanoparticle results in secondary trapping sites for a pair of dielectric nanoparticles.

A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons

Science.gov (United States)

Rossani, A.

2017-12-01

If electrons (e) and holes (h) in metals or semiconductors are heated to the temperatures T_e and T_h greater than the lattice temperature, the electron-phonon interaction causes energy relaxation. In the non-uniform case a momentum relaxation occurs as well. In view of such an application, a new model, based on an asymptotic procedure for solving the kinetic equations of carriers, phonons, and photons, is proposed, which gives naturally the displaced Maxwellian at the leading order. Several generation-recombination (GR) events occur in bipolar semiconductors. In the presence of photons the most important ones are the radiative GR events, direct, indirect, and exciton-catalyzed. Phonons and photons are treated here as a participating species, with their own equation. All the phonon-photon interactions are accounted for. Moreover, carrier-photon (Compton) interactions are introduced, which make complete the model. After that, balance equations for the electron number, hole number, energy densities, and momentum densities are constructed, which constitute now a system of macroscopic equations for the chemical potentials (carriers), the temperatures (carriers and bosons), and the drift velocities (carriers and bosons). In the drift-diffusion approximation the constitutive laws are derived and the Onsager relations recovered, even in the presence of an external magnetic field.

Possible High Thermoelectric Power in Semiconducting Carbon Nanotubes ˜A Case Study of Doped One-Dimensional Semiconductors˜

Science.gov (United States)

Yamamoto, Takahiro; Fukuyama, Hidetoshi

2018-02-01

We have theoretically investigated the thermoelectric properties of impurity-doped one-dimensional semiconductors, focusing on nitrogen-substituted (N-substituted) carbon nanotubes (CNTs), using the Kubo formula combined with a self-consistent t-matrix approximation. N-substituted CNTs exhibit extremely high thermoelectric power factor (PF) values originating from a characteristic of one-dimensional materials where decrease in the carrier density increase both the electrical conductivity and the Seebeck coefficient in the low-N regime. The chemical potential dependence of the PF values of semiconducting CNTs has also been studied as a field-effect transistor and it turns out that the PF values show a noticeable maximum in the vicinity of the band edges. This result demonstrates that "band-edge engineering" will be crucial for solid development of high-performance thermoelectric materials.

Optical transmission properties of an anisotropic defect cavity in one-dimensional photonic crystal

Science.gov (United States)

Ouchani, Noama; El Moussaouy, Abdelaziz; Aynaou, Hassan; El Hassouani, Youssef; El Boudouti, El Houssaine; Djafari-Rouhani, Bahram

2018-01-01

We investigate theoretically the possibility to control the optical transmission in the visible and infrared regions by a defective one dimensional photonic crystal formed by a combination of a finite isotropic superlattice and an anisotropic defect layer. The Green's function approach has been used to derive the reflection and the transmission coefficients, as well as the densities of states of the optical modes. We evaluate the delay times of the localized modes and we compare their behavior with the total densities of states. We show that the birefringence of an anisotropic defect layer has a significant impact on the behavior of the optical modes in the electromagnetic forbidden bands of the structure. The amplitudes of the defect modes in the transmission and the delay time spectrum, depend strongly on the position of the cavity layer within the photonic crystal. The anisotropic defect layer induces transmission zeros in one of the two components of the transmission as a consequence of a destructive interference of the two polarized waves within this layer, giving rise to negative delay times for some wavelengths in the visible and infrared light ranges. This property is a typical characteristic of the anisotropic photonic layer and is without analogue in their counterpart isotropic defect layers. This structure offers several possibilities for controlling the frequencies, transmitted intensities and the delay times of the optical modes in the visible and infrared regions. It can be a good candidate for realizing high-precision optical filters.

Time-dependent one-dimensional simulation of atmospheric dielectric barrier discharge in N2/O2/H2O using COMSOL Multiphysics

Science.gov (United States)

Sohbatzadeh, F.; Soltani, H.

2018-04-01

The results of time-dependent one-dimensional modelling of a dielectric barrier discharge (DBD) in a nitrogen-oxygen-water vapor mixture at atmospheric pressure are presented. The voltage-current characteristics curves and the production of active species are studied. The discharge is driven by a sinusoidal alternating high voltage-power supply at 30 kV with frequency of 27 kHz. The electrodes and the dielectric are assumed to be copper and quartz, respectively. The current discharge consists of an electrical breakdown that occurs in each half-period. A detailed description of the electron attachment and detachment processes, surface charge accumulation, charged species recombination, conversion of negative and positive ions, ion production and losses, excitations and dissociations of molecules are taken into account. Time-dependent one-dimensional electron density, electric field, electric potential, electron temperature, densities of reactive oxygen species (ROS) and reactive nitrogen species (RNS) such as: O, O-, O+, {O}2^{ - } , {O}2^{ + } , O3, {N}, {N}2^{ + } , N2s and {N}2^{ - } are simulated versus time across the gas gap. The results of this work could be used in plasma-based pollutant degradation devices.

Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors.

Science.gov (United States)

Lee, Su Jin; Kim, Yong-Jae; Yeo, So Young; Lee, Eunji; Lim, Ho Sun; Kim, Min; Song, Yong-Won; Cho, Jinhan; Lim, Jung Ah

2015-09-11

Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step.

Heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides

Energy Technology Data Exchange (ETDEWEB)

Song, Guo-Zhu; Zhang, Mei; Ai, Qing; Yang, Guo-Jian [Department of Physics, Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing 100875 (China); Alsaedi, Ahmed; Hobiny, Aatef [NAAM-Research Group, Department of Mathematics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589 (Saudi Arabia); Deng, Fu-Guo, E-mail: fgdeng@bnu.edu.cn [Department of Physics, Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing 100875 (China); NAAM-Research Group, Department of Mathematics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589 (Saudi Arabia)

2017-03-15

We propose a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We show the details by implementing nonlocal entanglement generation, entanglement swapping, and entanglement purification modules with atoms in waveguides, and discuss the feasibility of the repeater with currently achievable technology. In our scheme, the faulty events can be discarded by detecting the polarization of the photons. That is, our protocols are accomplished with a fidelity of 100% in principle, which is advantageous for implementing realistic long-distance quantum communication. Moreover, additional atomic qubits are not required, but only a single-photon medium. Our scheme is scalable and attractive since it can be realized in solid-state quantum systems. With the great progress on controlling atom-waveguide systems, the repeater may be very useful in quantum information processing in the future.

BERMUDA-1DG: a one-dimensional photon transport code

International Nuclear Information System (INIS)

Suzuki, Tomoo; Hasegawa, Akira; Nakashima, Hiroshi; Kaneko, Kunio.

1984-10-01

A one-dimensional photon transport code BERMUDA-1DG has been developed for spherical and infinite slab geometries. The purpose of development is to equip the function of gamma rays calculation for the BERMUDA code system, which was developed by 1983 only for neutron transport calculation as a preliminary version. A group constants library has been prepared for 30 nuclides, and it now consists of the 36-group total cross sections and secondary gamma ray yields by the 120-group neutron flux. For the Compton scattering, group-angle transfer matrices are accurately obtained by integrating the Klein-Nishina formula taking into account the energy and scattering angle correlation. The pair production cross sections are now calculated in the code from atomic number and midenergy of each group. To obtain angular flux distribution, the transport equation is solved in the same way as in case of neutron, using the direct integration method in a multigroup model. Both of an independent gamma ray source problem and a neutron-gamma source problem are possible to be solved. This report is written as a user's manual with a brief description of the calculational method. (author)

Semiconductor crystal high resolution imager

Science.gov (United States)

Levin, Craig S. (Inventor); Matteson, James (Inventor)

2011-01-01

A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

Nanonewton thrust measurement of photon pressure propulsion using semiconductor laser

Science.gov (United States)

Iwami, K.; Akazawa, Taku; Ohtsuka, Tomohiro; Nishida, Hiroyuki; Umeda, Norihiro

2011-09-01

To evaluate the thrust produced by photon pressure emitted from a 100 W class continuous-wave semiconductor laser, a torsion-balance precise thrust stand is designed and tested. Photon emission propulsion using semiconductor light sources attract interests as a possible candidate for deep-space propellant-less propulsion and attitude control system. However, the thrust produced by photon emission as large as several ten nanonewtons requires precise thrust stand. A resonant method is adopted to enhance the sensitivity of the biflier torsional-spring thrust stand. The torsional spring constant and the resonant of the stand is 1.245 × 10-3 Nm/rad and 0.118 Hz, respectively. The experimental results showed good agreement with the theoretical estimation. The thrust efficiency for photon propulsion was also defined. A maximum thrust of 499 nN was produced by the laser with 208 W input power (75 W of optical output) corresponding to a thrust efficiency of 36.7%. The minimum detectable thrust of the stand was estimated to be 2.62 nN under oscillation at a frequency close to resonance.

Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

Science.gov (United States)

Xu, Runshen

Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

Quasiperiodic one-dimensional photonic crystals with adjustable multiple photonic bandgaps.

Science.gov (United States)

Vyunishev, Andrey M; Pankin, Pavel S; Svyakhovskiy, Sergey E; Timofeev, Ivan V; Vetrov, Stepan Ya

2017-09-15

We propose an elegant approach to produce photonic bandgap (PBG) structures with multiple photonic bandgaps by constructing quasiperiodic photonic crystals (QPPCs) composed of a superposition of photonic lattices with different periods. Generally, QPPC structures exhibit both aperiodicity and multiple PBGs due to their long-range order. They are described by a simple analytical expression, instead of quasiperiodic tiling approaches based on substitution rules. Here we describe the optical properties of QPPCs exhibiting two PBGs that can be tuned independently. PBG interband spacing and its depth can be varied by choosing appropriate reciprocal lattice vectors and their amplitudes. These effects are confirmed by the proof-of-concept measurements made for the porous silicon-based QPPC of the appropriate design.

Experimental two-dimensional quantum walk on a photonic chip.

Science.gov (United States)

Tang, Hao; Lin, Xiao-Feng; Feng, Zhen; Chen, Jing-Yuan; Gao, Jun; Sun, Ke; Wang, Chao-Yue; Lai, Peng-Cheng; Xu, Xiao-Yun; Wang, Yao; Qiao, Lu-Feng; Yang, Ai-Lin; Jin, Xian-Min

2018-05-01

Quantum walks, in virtue of the coherent superposition and quantum interference, have exponential superiority over their classical counterpart in applications of quantum searching and quantum simulation. The quantum-enhanced power is highly related to the state space of quantum walks, which can be expanded by enlarging the photon number and/or the dimensions of the evolution network, but the former is considerably challenging due to probabilistic generation of single photons and multiplicative loss. We demonstrate a two-dimensional continuous-time quantum walk by using the external geometry of photonic waveguide arrays, rather than the inner degree of freedoms of photons. Using femtosecond laser direct writing, we construct a large-scale three-dimensional structure that forms a two-dimensional lattice with up to 49 × 49 nodes on a photonic chip. We demonstrate spatial two-dimensional quantum walks using heralded single photons and single photon-level imaging. We analyze the quantum transport properties via observing the ballistic evolution pattern and the variance profile, which agree well with simulation results. We further reveal the transient nature that is the unique feature for quantum walks of beyond one dimension. An architecture that allows a quantum walk to freely evolve in all directions and at a large scale, combining with defect and disorder control, may bring up powerful and versatile quantum walk machines for classically intractable problems.

Anisotropic transport in the quasi-one-dimensional semiconductor Li{sub 0.33}MoO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Moshfeghyeganeh, S.; Cote, A. N.; Cohn, J. L., E-mail: cohn@physics.miami.edu [Department of Physics, University of Miami, Coral Gables, Florida 33124 (United States); Neumeier, J. J. [Department of Physics, Montana State University, Bozeman, Montana 59717 (United States)

2016-03-07

Transport measurements (electrical resistivity, Seebeck coefficient, and thermal conductivity) in the temperature range 80–500 K are presented for single crystals of the quasi-one-dimensional (Q1D) semiconductor Li{sub 0.33}MoO{sub 3}. Opposite signs are observed for the Seebeck coefficient along the trinclinic a and c axes, with S{sub c} − S{sub a} ≃ 250 μV/K near room temperature and ≃100 μV/K at 380 K. The thermal conductivity at room temperature in the a-c planes was ∼2 W/m K and ∼10 times smaller along b*. A weak structural anomaly at T{sub s} ≈ 355 K, identified in the temperature-dependent lattice constants, coincides with anomalies in the electrical properties. Analysis of the electronic transport at T > T{sub s} favors an intrinsic semiconductor picture for transport along the most conducting Q1D axis and small-polaronic transport along the other directions, providing insight into the origin of the Seebeck anisotropy.

Dynamics of single photon transport in a one-dimensional waveguide two-point coupled with a Jaynes-Cummings system

KAUST Repository

Wang, Yuwen

2016-09-22

We study the dynamics of an ultrafast single photon pulse in a one-dimensional waveguide two-point coupled with a Jaynes-Cummings system. We find that for any single photon input the transmissivity depends periodically on the separation between the two coupling points. For a pulse containing many plane wave components it is almost impossible to suppress transmission, especially when the width of the pulse is less than 20 times the period. In contrast to plane wave input, the waveform of the pulse can be modified by controlling the coupling between the waveguide and Jaynes-Cummings system. Tailoring of the waveform is important for single photon manipulation in quantum informatics. © The Author(s) 2016.

Macroscopic optical response and photonic bands

International Nuclear Information System (INIS)

Pérez-Huerta, J S; Luis Mochán, W; Ortiz, Guillermo P; Mendoza, Bernardo S

2013-01-01

We develop a formalism for the calculation of the macroscopic dielectric response of composite systems made of particles of one material embedded periodically within a matrix of another material, each of which is characterized by a well-defined dielectric function. The nature of these dielectric functions is arbitrary, and could correspond to dielectric or conducting, transparent or opaque, absorptive and dispersive materials. The geometry of the particles and the Bravais lattice of the composite are also arbitrary. Our formalism goes beyond the long-wavelength approximation as it fully incorporates retardation effects. We test our formalism through the study of the propagation of electromagnetic waves in two-dimensional photonic crystals made of periodic arrays of cylindrical holes in a dispersionless dielectric host. Our macroscopic theory yields a spatially dispersive macroscopic response which allows the calculation of the full photonic band structure of the system, as well as the characterization of its normal modes, upon substitution into the macroscopic field equations. We can also account approximately for the spatial dispersion through a local magnetic permeability and analyze the resulting dispersion relation, obtaining a region of left handedness. (paper)

Nonlinear Gain Saturation in Active Slow Light Photonic Crystal Waveguides

DEFF Research Database (Denmark)

Chen, Yaohui; Mørk, Jesper

2013-01-01

We present a quantitative three-dimensional analysis of slow-light enhanced traveling wave amplification in an active semiconductor photonic crystal waveguides. The impact of slow-light propagation on the nonlinear gain saturation of the device is investigated.......We present a quantitative three-dimensional analysis of slow-light enhanced traveling wave amplification in an active semiconductor photonic crystal waveguides. The impact of slow-light propagation on the nonlinear gain saturation of the device is investigated....

Controlling the light propagation in one-dimensional photonic crystal via incoherent pump and interdot tunneling

Science.gov (United States)

Abbasabadi, Majid; Sahrai, Mostafa

2018-01-01

We investigated the propagation of an electromagnetic pulse through a one-dimensional photonic crystal doped with quantum-dot (QD) molecules in a defect layer. The QD molecules behave as a three-level quantum system and are driven by a coherent probe laser field and an incoherent pump field. No coherent coupling laser fields were introduced, and the coherence was created by the interdot tunnel effect. Further studied was the effect of tunneling and incoherent pumping on the group velocity of the transmitted and reflected probe pulse.

High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments.

Science.gov (United States)

Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

2017-11-03

Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

Bio Organic-Semiconductor Field-Effect Transistor (BioFET) Based on Deoxyribonucleic Acid (DNA) Gate Dielectric

Science.gov (United States)

2010-03-31

floating gate devices and metal-insulator-oxide-semiconductor (MIOS) devices. First attempts to use polarizable gate insulators in combination with...bulk of the semiconductor (ii) Due to the polarizable gate dielectric (iii) dipole polarization and (iv)electret effect due to mobile ions in the...characterization was carried out under an argon environment inside the glove box. An Agilent model E5273A with a two source-measurement unit instrument was

Hybrid colloidal plasmonic-photonic crystals.

Science.gov (United States)

Romanov, Sergei G; Korovin, Alexander V; Regensburger, Alois; Peschel, Ulf

2011-06-17

We review the recently emerged class of hybrid metal-dielectric colloidal photonic crystals. The hybrid approach is understood as the combination of a dielectric photonic crystal with a continuous metal film. It allows to achieve a strong modification of the optical properties of photonic crystals by involving the light scattering at electronic excitations in the metal component into moulding of the light flow in series to the diffraction resonances occurring in the body of the photonic crystal. We consider different realizations of hybrid plasmonic-photonic crystals based on two- and three-dimensional colloidal photonic crystals in association with flat and corrugated metal films. In agreement with model calculations, different resonance phenomena determine the optical response of hybrid crystals leading to a broadly tuneable functionality of these crystals. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrically Rotatable Polarizer Using One-Dimensional Photonic Crystal with a Nematic Liquid Crystal Defect Layer

Directory of Open Access Journals (Sweden)

Ryotaro Ozaki

2015-09-01

Full Text Available Polarization characteristics of defect mode peaks in a one-dimensional (1D photonic crystal (PC with a nematic liquid crystal (NLC defect layer have been investigated. Two different polarized defect modes are observed in a stop band. One group of defect modes is polarized along the long molecular axis of the NLC, whereas another group is polarized along its short axis. Polarizations of the defect modes can be tuned by field-induced in-plane reorientation of the NLC in the defect layer. The polarization properties of the 1D PC with the NLC defect layer is also investigated by the finite difference time domain (FDTD simulation.

Two-dimensional photonic crystal accelerator structures

Directory of Open Access Journals (Sweden)

Benjamin M. Cowan

2003-10-01

Full Text Available Photonic crystals provide a method of confining a synchronous speed-of-light mode in an all-dielectric structure, likely a necessary feature in any optical accelerator. We explore computationally a class of photonic crystal structures with translational symmetry in a direction transverse to the electron beam. We demonstrate synchronous waveguide modes and discuss relevant parameters of such modes. We then explore how accelerator parameters vary as the geometry of the structure is changed and consider trade-offs inherent in the design of an accelerator of this type.

Recent advances in organic one-dimensional composite materials: design, construction, and photonic elements for information processing.

Science.gov (United States)

Yan, Yongli; Zhang, Chuang; Yao, Jiannian; Zhao, Yong Sheng

2013-07-19

Many recent activities in the use of one-dimensional nanostructures as photonic elements for optical information processing are explained by huge advantages that photonic circuits possess over traditional silicon-based electronic ones in bandwidth, heat dissipation, and resistance to electromagnetic wave interference. Organic materials are a promising candidate to support these optical-related applications, as they combine the properties of plastics with broad spectral tunability, high optical cross-section, easy fabrication, as well as low cost. Their outstanding compatibility allows organic composite structures which are made of two or more kinds of materials combined together, showing great superiority to single-component materials due to the introduced interactions among multiple constituents, such as energy transfer, electron transfer, exciton coupling, etc. The easy processability of organic 1D crystalline heterostructures enables a fine topological control of both composition and geometry, which offsets the intrinsic deficiencies of individual material. At the same time, the strong exciton-photon coupling and exciton-exciton interaction impart the excellent confinement of photons in organic microstructures, thus light can be manipulated according to our intention to realize specific functions. These collective properties indicate a potential utility of organic heterogeneous material for miniaturized photonic circuitry. Herein, focus is given on recent advances of 1D organic crystalline heterostructures, with special emphasis on the novel design, controllable construction, diverse performance, as well as wide applications in isolated photonic elements for integration. It is proposed that the highly coupled, hybrid optical networks would be an important material basis towards the creation of on-chip optical information processing. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

Science.gov (United States)

Ukah, Ndubuisi Benjamin

This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

Two-dimensional 'photon fluid': effective photon-photon interaction and physical realizations

International Nuclear Information System (INIS)

Chiao, R Y; Hansson, T H; Leinaas, J M; Viefers, S

2004-01-01

We describe a recently developed effective theory for atom-mediated photon-photon interactions in a two-dimensional 'photon fluid' confined to a Fabry-Perot resonator. The photons in the lowest longitudinal cavity mode will appear as massive bosons interacting via a renormalized delta-function potential with a strength determined by physical parameters such as the density of atoms and the detuning of the photons relative to the resonance frequency of the atoms. We discuss novel quantum phenomena for photons, such as Bose-Einstein condensation and bound state formation, as well as possible experimental scenarios based on Rydberg atoms in a microwave cavity, or alkali atoms in an optical cavity

Characteristics of strain-sensitive photonic crystal cavities in a flexible substrate.

Science.gov (United States)

No, You-Shin; Choi, Jae-Hyuck; Kim, Kyoung-Ho; Park, Hong-Gyu

2016-11-14

High-index semiconductor photonic crystal (PhC) cavities in a flexible substrate support strong and tunable optical resonances that can be used for highly sensitive and spatially localized detection of mechanical deformations in physical systems. Here, we report theoretical studies and fundamental understandings of resonant behavior of an optical mode excited in strain-sensitive rod-type PhC cavities consisting of high-index dielectric nanorods embedded in a low-index flexible polymer substrate. Using the three-dimensional finite-difference time-domain simulation method, we calculated two-dimensional transverse-electric-like photonic band diagrams and the three-dimensional dispersion surfaces near the first Γ-point band edge of unidirectionally strained PhCs. A broken rotational symmetry in the PhCs modifies the photonic band structures and results in the asymmetric distributions and different levels of changes in normalized frequencies near the first Γ-point band edge in the reciprocal space, which consequently reveals strain-dependent directional optical losses and selected emission patterns. The calculated electric fields, resonant wavelengths, and quality factors of the band-edge modes in the strained PhCs show an excellent agreement with the results of qualitative analysis of modified dispersion surfaces. Furthermore, polarization-resolved time-averaged Poynting vectors exhibit characteristic dipole-like emission patterns with preferentially selected linear polarizations, originating from the asymmetric band structures in the strained PhCs.

Higher-order amplitude squeezing of photons propagating through a semiconductor

International Nuclear Information System (INIS)

Nguyen Ba An.

1996-12-01

Photon amplitude K th power squeezing is studied when the coherent photon propagates through a semiconductor containing the exciton. If the exciton is prepared initially in a coherent state, the photon may become amplitude K th power squeezed. It is shown that, in the short-time limit, the photon squeezing in the P direction does not appear at all while that in the X direction is possible for all the amplitude power K. In the latter case, the amount of squeezing is larger for higher power K. Dependences on all the system parameters as well as on the output light detection moment are investigated in detail. (author). 14 refs, 8 figs

Photonic crystals of core-shell colloidal particles

NARCIS (Netherlands)

Velikov, K.P.; Moroz, A.; Blaaderen, A. van

2001-01-01

We report on the fabrication and optical transmission studies of thin three-dimensional (3D) photonic crystals of high-dielectric ZnS-core and low-dielectric SiO2-shell colloidal particles. These samples were fabricated using a vertical controlled drying method. The spectral position and width of a

X-ray imaging with photon counting hybrid semiconductor pixel detectors

CERN Document Server

Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

1999-01-01

Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

Photonic structures based on hybrid nanocomposites

Science.gov (United States)

Husaini, Saima

In this thesis, photonic structures embedded with two types of nanomaterials, (i) quantum dots and (ii) metal nanoparticles are studied. Both of these exhibit optical and electronic properties different from their bulk counterpart due to their nanoscale physical structure. By integrating these nanomaterials into photonic structures, in which the electromagnetic field can be confined and controlled via modification of geometry and composition, we can enhance their linear and nonlinear optical properties to realize functional photonic structures. Before embedding quantum dots into photonic structures, we study the effect of various host matrices and fabrication techniques on the optical properties of the colloidal quantum dots. The two host matrices of interest are SU8 and PMMA. It is shown that the emission properties of the quantum dots are significantly altered in these host matrices (especially SU8) and this is attributed to a high rate of nonradiative quenching of the dots. Furthermore, the effects of fabrication techniques on the optical properties of quantum dots are also investigated. Finally a microdisk resonator embedded with quantum dots is fabricated using soft lithography and luminescence from the quantum dots in the disk is observed. We investigate the absorption and effective index properties of silver nanocomposite films. It is shown that by varying the fill factor of the metal nanoparticles and fabrication parameters such as heating time, we can manipulate the optical properties of the metal nanocomposite. Optimizing these parameters, a silver nanocomposite film with a 7% fill factor is prepared. A one-dimensional photonic crystal consisting of alternating layers of the silver nanocomposite and a polymer (Polymethyl methacrylate) is fabricated using spin coating and its linear and nonlinear optical properties are investigated. Using reflectivity measurements we demonstrate that the one-dimensional silver-nanocomposite-dielectric photonic crystal

Disorders influences on the focusing effect of all-dielectric photonic crystal slab superlens

Energy Technology Data Exchange (ETDEWEB)

Hu Xiaoyong; Xin Cheng [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Gong Qihuang [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)], E-mail: qhgong@pku.edu.cn

2009-04-13

The influences of structure disorders on the subwavelength focusing properties of an all-dielectric photonic crystal slab superlens are theoretically studied. The structure disorders are considered as randomly perturbing the position or diameter of air holes of the photonic crystal slab. The results show that the photonic crystal slab superlens can tolerate within 10% degree of positional disorder or 15% degree of diameter disorder without destroying the focusing function.

Disorders influences on the focusing effect of all-dielectric photonic crystal slab superlens

International Nuclear Information System (INIS)

Hu Xiaoyong; Xin Cheng; Gong Qihuang

2009-01-01

The influences of structure disorders on the subwavelength focusing properties of an all-dielectric photonic crystal slab superlens are theoretically studied. The structure disorders are considered as randomly perturbing the position or diameter of air holes of the photonic crystal slab. The results show that the photonic crystal slab superlens can tolerate within 10% degree of positional disorder or 15% degree of diameter disorder without destroying the focusing function.

Analysis and synthesis of one-dimensional magneto-photonic crystals using coupled mode theory

Energy Technology Data Exchange (ETDEWEB)

Saghirzadeh Darki, Behnam, E-mail: b.saghirzadeh@ec.iut.ac.ir; Nezhad, Abolghasem Zeidaabadi; Firouzeh, Zaker Hossein

2017-03-15

We utilize our previously developed temporal coupled mode approach to investigate the performance of one-dimensional magneto-photonic crystals (MPCs). We analytically demonstrate that a double-defect MPC provides adequate degrees of freedom to design a structure for arbitrary transmittance and Faraday rotation. By using our developed analytic approach along with the numerical transfer matrix method, we present a procedure for the synthesis of an MPC to generate any desired transmittance and Faraday rotation in possible ranges. However it is seen that only discrete values of transmittance and Faraday rotation are practically obtainable. To remedy this problem along with having short structures, we introduce a class of MPC heterostructures which are combinations of stacks with high and low optical contrast ratios.

Harnessing no-photon exciton generation chemistry to engineer semiconductor nanostructures.

Science.gov (United States)

Beke, David; Károlyházy, Gyula; Czigány, Zsolt; Bortel, Gábor; Kamarás, Katalin; Gali, Adam

2017-09-06

Production of semiconductor nanostructures with high yield and tight control of shape and size distribution is an immediate quest in diverse areas of science and technology. Electroless wet chemical etching or stain etching can produce semiconductor nanoparticles with high yield but is limited to a few materials because of the lack of understanding the physical-chemical processes behind. Here we report a no-photon exciton generation chemistry (NPEGEC) process, playing a key role in stain etching of semiconductors. We demonstrate NPEGEC on silicon carbide polymorphs as model materials. Specifically, size control of cubic silicon carbide nanoparticles of diameter below ten nanometers was achieved by engineering hexagonal inclusions in microcrystalline cubic silicon carbide. Our finding provides a recipe to engineer patterned semiconductor nanostructures for a broad class of materials.

Quantum interference of ballistic carriers in one-dimensional semiconductor rings

International Nuclear Information System (INIS)

Bagraev, N.T.; Buravlev, A.D.; Klyachkin, L.E.; Malyarenko, A.M.; Ivanov, V.K.; Rykov, S.A.; Shelykh, I.A.

2000-01-01

Quantum interference of ballistic carriers has been studied for the first time, using one-dimensional rings formed by quantum wire pairs in self-assembled silicon quantum wells. Energy dependencies of the transmission coefficient is calculated as a function of the length and modulation of the quantum wire pairs separated by a unified drain-source system or the quantum point contacts. The quantum conductance is predicted to be increased by a factor of four using the unified drain-source system as a result of the quantum interference. Theoretical dependencies are revealed by the quantum conductance oscillations created by the deviations of both the drain-source voltage and external magnetic field inside the silicon one-dimensional rings. The results obtained put forward a basis to create the Aharonov-Bohm interferometer using the silicon one-dimensional ring [ru

Slow and fast light effects in semiconductor waveguides for applications in microwave photonics

DEFF Research Database (Denmark)

Xue, Weiqi; Chen, Yaohui; Öhman, Filip

2009-01-01

We review the theory of slow and fast light effects due to coherent population oscillations in semiconductor waveguides, and potential applications of these effects in microwave photonic systems as RF phase shifters. In order to satisfy the application requirement of 360º RF phase shift at differ......We review the theory of slow and fast light effects due to coherent population oscillations in semiconductor waveguides, and potential applications of these effects in microwave photonic systems as RF phase shifters. In order to satisfy the application requirement of 360º RF phase shift...

Manipulation of photons at the surface of three-dimensional photonic crystals.

Science.gov (United States)

Ishizaki, Kenji; Noda, Susumu

2009-07-16

In three-dimensional (3D) photonic crystals, refractive-index variations with a periodicity comparable to the wavelength of the light passing through the crystal give rise to so-called photonic bandgaps, which are analogous to electronic bandgaps for electrons moving in the periodic electrostatic potential of a material's crystal structure. Such 3D photonic bandgap crystals are envisioned to become fundamental building blocks for the control and manipulation of photons in optical circuits. So far, such schemes have been pursued by embedding artificial defects and light emitters inside the crystals, making use of 3D bandgap directional effects. Here we show experimentally that photons can be controlled and manipulated even at the 'surface' of 3D photonic crystals, where 3D periodicity is terminated, establishing a new and versatile route for photon manipulation. By making use of an evanescent-mode coupling technique, we demonstrate that 3D photonic crystals possess two-dimensional surface states, and we map their band structure. We show that photons can be confined and propagate through these two-dimensional surface states, and we realize their localization at arbitrary surface points by designing artificial surface-defect structures through the formation of a surface-mode gap. Surprisingly, the quality factors of the surface-defect mode are the largest reported for 3D photonic crystal nanocavities (Q up to approximately 9,000). In addition to providing a new approach for photon manipulation by photonic crystals, our findings are relevant for the generation and control of plasmon-polaritons in metals and the related surface photon physics. The absorption-free nature of the 3D photonic crystal surface may enable new sensing applications and provide routes for the realization of efficient light-matter interactions.

One-dimensional self-confinement promotes polymorph selection in large-area organic semiconductor thin films

KAUST Repository

Giri, Gaurav; Li, Ruipeng; Smilgies, Detlef Matthias; Li, Erqiang; Diao, Ying; Lenn, Kristina M.; Chiu, Melanie; Lin, Debora W.; Allen, Ranulfo A.; Reinspach, Julia A.; Mannsfeld, Stefan C B; Thoroddsen, Sigurdur T; Clancy, Paulette; Bao, Zhenan; Amassian, Aram

2014-01-01

A crystal's structure has significant impact on its resulting biological, physical, optical and electronic properties. In organic electronics, 6,13(bis-triisopropylsilylethynyl)pentacene (TIPS-pentacene), a small-molecule organic semiconductor, adopts metastable polymorphs possessing significantly faster charge transport than the equilibrium crystal when deposited using the solution-shearing method. Here, we use a combination of high-speed polarized optical microscopy, in situ microbeam grazing incidence wide-angle X-ray-scattering and molecular simulations to understand the mechanism behind formation of metastable TIPS-pentacene polymorphs. We observe that thin-film crystallization occurs first at the air-solution interface, and nanoscale vertical spatial confinement of the solution results in formation of metastable polymorphs, a one-dimensional and large-area analogy to crystallization of polymorphs in nanoporous matrices. We demonstrate that metastable polymorphism can be tuned with unprecedented control and produced over large areas by either varying physical confinement conditions or by tuning energetic conditions during crystallization through use of solvent molecules of various sizes. © 2014 Macmillan Publishers Limited.

One-dimensional self-confinement promotes polymorph selection in large-area organic semiconductor thin films.

Science.gov (United States)

Giri, Gaurav; Li, Ruipeng; Smilgies, Detlef-M; Li, Er Qiang; Diao, Ying; Lenn, Kristina M; Chiu, Melanie; Lin, Debora W; Allen, Ranulfo; Reinspach, Julia; Mannsfeld, Stefan C B; Thoroddsen, Sigurdur T; Clancy, Paulette; Bao, Zhenan; Amassian, Aram

2014-04-16

A crystal's structure has significant impact on its resulting biological, physical, optical and electronic properties. In organic electronics, 6,13(bis-triisopropylsilylethynyl)pentacene (TIPS-pentacene), a small-molecule organic semiconductor, adopts metastable polymorphs possessing significantly faster charge transport than the equilibrium crystal when deposited using the solution-shearing method. Here, we use a combination of high-speed polarized optical microscopy, in situ microbeam grazing incidence wide-angle X-ray-scattering and molecular simulations to understand the mechanism behind formation of metastable TIPS-pentacene polymorphs. We observe that thin-film crystallization occurs first at the air-solution interface, and nanoscale vertical spatial confinement of the solution results in formation of metastable polymorphs, a one-dimensional and large-area analogy to crystallization of polymorphs in nanoporous matrices. We demonstrate that metastable polymorphism can be tuned with unprecedented control and produced over large areas by either varying physical confinement conditions or by tuning energetic conditions during crystallization through use of solvent molecules of various sizes.

Large time behavior of entropy solutions to one-dimensional unipolar hydrodynamic model for semiconductor devices

Science.gov (United States)

Huang, Feimin; Li, Tianhong; Yu, Huimin; Yuan, Difan

2018-06-01

We are concerned with the global existence and large time behavior of entropy solutions to the one-dimensional unipolar hydrodynamic model for semiconductors in the form of Euler-Poisson equations in a bounded interval. In this paper, we first prove the global existence of entropy solution by vanishing viscosity and compensated compactness framework. In particular, the solutions are uniformly bounded with respect to space and time variables by introducing modified Riemann invariants and the theory of invariant region. Based on the uniform estimates of density, we further show that the entropy solution converges to the corresponding unique stationary solution exponentially in time. No any smallness condition is assumed on the initial data and doping profile. Moreover, the novelty in this paper is about the unform bound with respect to time for the weak solutions of the isentropic Euler-Poisson system.

Raman scattering enhancement in photon-plasmon resonance mediated metal-dielectric microcavity

International Nuclear Information System (INIS)

Guddala, Sriram; Narayana Rao, D.; Dwivedi, Vindesh K.; Vijaya Prakash, G.

2013-01-01

Here, we report the photon-plasmon interaction scheme and enhanced field strengths resulted into the amplification of phonon in a novel microcavity. A metal-dielectric microcavity, with unified cavity photonic mode and localized surface plasmon resonances, is visualized by impregnating the gold nanoparticles into the deep see-through nano-sized pores of porous silicon microcavity. The intense optical field strengths resulting from the photon-plasmon interactions are probed by both resonant and non-resonant Raman scattering experiments. Due to photon-plasmon-phonon interaction mechanism, several orders of enhancement in the intensity of scattered Raman Stokes photon (at 500 cm −1 ) are observed. Our metal nanoparticle-microcavity hybrid system shows the potential to improve the sensing figure of merit as well as the applications of plasmonics for optoelectronics, photovoltaics, and related technologies

Light propagation in one-dimensional porous silicon complex systems

NARCIS (Netherlands)

Oton, C.J.; Dal Negro, L.; Gaburro, Z.; Pavesi, L.; Johnson, P.J.; Lagendijk, Aart; Wiersma, D.S.

2003-01-01

We discuss the optical properties of one-dimensional complex dielectric systems, in particular the time-resolved transmission through thick porous silicon quasiperiodic multi-layers. Both in numerical calculations and experiments we find dramatic distortion effects, i.e. pulse stretching and

Quantum entanglement and phase transition in a two-dimensional photon-photon pair model

International Nuclear Information System (INIS)

Zhang Jianjun; Yuan Jianhui; Zhang Junpei; Cheng Ze

2013-01-01

We propose a two-dimensional model consisting of photons and photon pairs. In the model, the mixed gas of photons and photon pairs is formally equivalent to a two-dimensional system of massive bosons with non-vanishing chemical potential, which implies the existence of two possible condensate phases. Using the variational method, we discuss the quantum phase transition of the mixed gas and obtain the critical coupling line analytically. Moreover, we also find that the phase transition of the photon gas can be interpreted as enhanced second harmonic generation. We then discuss the entanglement between photons and photon pairs. Additionally, we also illustrate how the entanglement between photons and photon pairs can be associated with the phase transition of the system.

Emulation of two-dimensional photonic crystal defect modes in a photonic crystal with a three-dimensional photonic band gap

Energy Technology Data Exchange (ETDEWEB)

Povinelli, M. L.; Johnson, Steven G.; Fan, Shanhui; Joannopoulos, J. D.

2001-08-15

Using numerical simulations, we demonstrate the construction of two-dimensional- (2D-) like defect modes in a recently proposed 3D photonic crystal structure. These modes, which are confined in all three dimensions by a complete photonic band gap, bear a striking similarity to those in 2D photonic crystals in terms of polarization, field profile, and projected band structures. It is expected that these results will greatly facilitate the observation of widely studied 2D photonic-crystal phenomena in a realistic, 3D physical system.

Emulation of two-dimensional photonic crystal defect modes in a photonic crystal with a three-dimensional photonic band gap

International Nuclear Information System (INIS)

Povinelli, M. L.; Johnson, Steven G.; Fan, Shanhui; Joannopoulos, J. D.

2001-01-01

Using numerical simulations, we demonstrate the construction of two-dimensional- (2D-) like defect modes in a recently proposed 3D photonic crystal structure. These modes, which are confined in all three dimensions by a complete photonic band gap, bear a striking similarity to those in 2D photonic crystals in terms of polarization, field profile, and projected band structures. It is expected that these results will greatly facilitate the observation of widely studied 2D photonic-crystal phenomena in a realistic, 3D physical system

Temporal coupled mode analysis of one-dimensional magneto-photonic crystals with cavity structures

Energy Technology Data Exchange (ETDEWEB)

Saghirzadeh Darki, Behnam, E-mail: b.saghirzadeh@ec.iut.ac.ir; Zeidaabadi Nezhad, Abolghasem; Firouzeh, Zaker Hossein

2016-12-01

In this paper, we propose the time-dependent coupled mode analysis of one-dimensional magneto-photonic crystals including one, two or multiple defect layers. The performance of the structures, namely the total transmission, Faraday rotation and ellipticity, is obtained using the proposed method. The results of the developed analytic approach are verified by comparing them to the results of the exact numerical transfer matrix method. Unlike the widely used numerical method, our proposed analytic method seems promising for the synthesis as well as the analysis purposes. Moreover, the proposed method has not the restrictions of the previously examined analytic methods. - Highlights: • A time-dependent coupled mode analysis is proposed for the cavity-type 1D MPCs. • Analytical formalism is presented for the single, double and multiple-defect MPCs. • Transmission, Faraday rotation and ellipticity are gained using the proposed method. • The proposed analytic method has advantages over the previously examined methods.

Photonic crystal light source

Science.gov (United States)

Fleming, James G [Albuquerque, NM; Lin, Shawn-Yu [Albuquerque, NM; Bur, James A [Corrales, NM

2004-07-27

A light source is provided by a photonic crystal having an enhanced photonic density-of-states over a band of frequencies and wherein at least one of the dielectric materials of the photonic crystal has a complex dielectric constant, thereby producing enhanced light emission at the band of frequencies when the photonic crystal is heated. The dielectric material can be a metal, such as tungsten. The spectral properties of the light source can be easily tuned by modification of the photonic crystal structure and materials. The photonic crystal light source can be heated electrically or other heating means. The light source can further include additional photonic crystals that exhibit enhanced light emission at a different band of frequencies to provide for color mixing. The photonic crystal light source may have applications in optical telecommunications, information displays, energy conversion, sensors, and other optical applications.

On-demand semiconductor single-photon source with near-unity indistinguishability.

Science.gov (United States)

He, Yu-Ming; He, Yu; Wei, Yu-Jia; Wu, Dian; Atatüre, Mete; Schneider, Christian; Höfling, Sven; Kamp, Martin; Lu, Chao-Yang; Pan, Jian-Wei

2013-03-01

Single-photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness and interconnectivity with matter qubits. A key prerequisite for their use in optical quantum computing and solid-state networks is a high level of efficiency and indistinguishability. Pulsed resonance fluorescence has been anticipated as the optimum condition for the deterministic generation of high-quality photons with vanishing effects of dephasing. Here, we generate pulsed single photons on demand from a single, microcavity-embedded quantum dot under s-shell excitation with 3 ps laser pulses. The π pulse-excited resonance-fluorescence photons have less than 0.3% background contribution and a vanishing two-photon emission probability. Non-postselective Hong-Ou-Mandel interference between two successively emitted photons is observed with a visibility of 0.97(2), comparable to trapped atoms and ions. Two single photons are further used to implement a high-fidelity quantum controlled-NOT gate.

Evaluation of scintillators and semiconductor detectors to image three-photon positron annihilation for positron emission tomography

International Nuclear Information System (INIS)

Abuelhia, E.; Spyrou, N.M.; Kacperski, K.; College University, Middlesex Hospital, London

2008-01-01

Positron emission tomography (PET) is rapidly becoming the main nuclear imaging modality of the present century. The future of PET instrumentation relies on semiconductor detectors because of their excellent characteristics. Three-photon positron annihilation has been recently investigated as a novel imaging modality, which demands the crucial high energy resolution of semiconductor detector. In this work the evaluation of the NaI(Tl) scintillator and HPGe and CdZTe semiconductor detectors, to construct a simple three-photon positron annihilation scanner has been explored. The effect of detector and scanner size on spatial resolution (FWHM) is discussed. The characteristics: energy resolution versus count rate and point-spread function of the three-photon positron annihilation image profile from triple coincidence measurements were investigated. (author)

Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors

International Nuclear Information System (INIS)

Kanevce, Ana; Kuciauskas, Darius; Levi, Dean H.; Johnston, Steven W.; Allende Motz, Alyssa M.

2015-01-01

We use two-dimensional numerical simulations to analyze high spatial resolution time-resolved spectroscopy data. This analysis is applied to two-photon excitation time-resolved photoluminescence (2PE-TRPL) but is broadly applicable to all microscopic time-resolved techniques. By solving time-dependent drift-diffusion equations, we gain insight into carrier dynamics and transport characteristics. Accurate understanding of measurement results establishes the limits and potential of the measurement and enhances its value as a characterization method. Diffusion of carriers outside of the collection volume can have a significant impact on the measured decay but can also provide an estimate of carrier mobility as well as lifetime. In addition to material parameters, the experimental conditions, such as spot size and injection level, can impact the measurement results. Although small spot size provides better resolution, it also increases the impact of diffusion on the decay; if the spot size is much smaller than the diffusion length, it impacts the entire decay. By reproducing experimental 2PE-TRPL decays, the simulations determine the bulk carrier lifetime from the data. The analysis is applied to single-crystal and heteroepitaxial CdTe, material important for solar cells, but it is also applicable to other semiconductors where carrier diffusion from the excitation volume could affect experimental measurements

Two-dimensional topological photonic systems

Science.gov (United States)

Sun, Xiao-Chen; He, Cheng; Liu, Xiao-Ping; Lu, Ming-Hui; Zhu, Shi-Ning; Chen, Yan-Feng

2017-09-01

The topological phase of matter, originally proposed and first demonstrated in fermionic electronic systems, has drawn considerable research attention in the past decades due to its robust transport of edge states and its potential with respect to future quantum information, communication, and computation. Recently, searching for such a unique material phase in bosonic systems has become a hot research topic worldwide. So far, many bosonic topological models and methods for realizing them have been discovered in photonic systems, acoustic systems, mechanical systems, etc. These discoveries have certainly yielded vast opportunities in designing material phases and related properties in the topological domain. In this review, we first focus on some of the representative photonic topological models and employ the underlying Dirac model to analyze the edge states and geometric phase. On the basis of these models, three common types of two-dimensional topological photonic systems are discussed: 1) photonic quantum Hall effect with broken time-reversal symmetry; 2) photonic topological insulator and the associated pseudo-time-reversal symmetry-protected mechanism; 3) time/space periodically modulated photonic Floquet topological insulator. Finally, we provide a summary and extension of this emerging field, including a brief introduction to the Weyl point in three-dimensional systems.

Monolithically Integrated Ge-on-Si Active Photonics

Directory of Open Access Journals (Sweden)

Jifeng Liu

2014-07-01

Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

Quantitative analysis and optimization of gravure printed metal ink, dielectric, and organic semiconductor films.

Science.gov (United States)

Higgins, Stuart G; Boughey, Francesca L; Hills, Russell; Steinke, Joachim H G; Muir, Beinn V O; Campbell, Alasdair J

2015-03-11

Here we demonstrate the optimization of gravure printed metal ink, dielectric, and semiconductor formulations. We present a technique for nondestructively imaging printed films using a commercially available flatbed scanner, combined with image analysis to quantify print behavior. Print speed, cliché screen density, nip pressure, the orientation of print structures, and doctor blade extension were found to have a significant impact on the quality of printed films, as characterized by the spreading of printed structures and variation in print homogeneity. Organic semiconductor prints were observed to exhibit multiple periodic modulations, which are correlated to the underlying cell structure.

Design, Fabrication, and Measurement of Two-Dimensional Photonic Crystal Slab Waveguides

International Nuclear Information System (INIS)

Chao, Zhang; Xuan, Tang; Xiao-Yu, Mao; Kai-Yu, Cui; Lei, Cao; Yi-Dong, Huang; Wei, Zhang; Jiang-De, Peng

2008-01-01

Two-dimensional photonic crystal slab waveguides on SOI wafer are designed and fabricated. Photonic band gap, band gap guided mode, and index guided mode are observed by measuring the transmission spectra. The experimental results are in good agreement with the theoretical ones

Comparative study of optical properties of the one-dimensional multilayer Period-Doubling and Thue-Morse quasi-periodic photonic crystals

Directory of Open Access Journals (Sweden)

Y. Bouazzi

2012-10-01

Full Text Available The last decades have witnessed the growing interest in the use of photonic crystal as a new material that can be used to control electromagnetic wave. Actually, not only the periodic structures but also the quasi-periodic systems have become significant structures of photonic crystals. This work deals with optical properties of dielectric Thue-Morse multilayer and Period-Doubling multilayer. We use the so-called Transfer Matrix Method (TMM to determine the transmission spectra of the structures. Based on the representation of the transmittance spectra in the visible range a comparative analysis depending on the iteration number, number of layers and incidence angle is presented.

[Research on increasing X-ray protection capability based on photonic crystal technology].

Science.gov (United States)

Li, Ping; Zhao, Peng; Zhang, Rui

2014-06-01

Light cannot be propagated within the range of photonic crystal band gaps. Based on this unique property, we proposed a method to improve anti-radiation capability through one-dimensional photonic crystal coating. Using transmission matrix method, we determined the appropriate dielectric materials, thickness and periodic numbers of photonic crystals through Matlab programming simulation. Then, compound one-dimensional photonic crystal coating was designed which was of high anti-radiation rate within the range of X-ray. As is shown through simulation experiments, the reflection rate against X-ray was higher than 90 percent, and the desired anti-radiation effect was achieved. Thus, this method is able to help solve the technical problems facing the inorganic lead glass such as thickness, weightiness, costliness, high lead equivalent, low transparency and high cost. This method has won China's national invention patent approval, and the patent number is 201220228549.2.

Bandgap optimization of two-dimensional photonic crystals using semidefinite programming and subspace methods

International Nuclear Information System (INIS)

Men, H.; Nguyen, N.C.; Freund, R.M.; Parrilo, P.A.; Peraire, J.

2010-01-01

In this paper, we consider the optimal design of photonic crystal structures for two-dimensional square lattices. The mathematical formulation of the bandgap optimization problem leads to an infinite-dimensional Hermitian eigenvalue optimization problem parametrized by the dielectric material and the wave vector. To make the problem tractable, the original eigenvalue problem is discretized using the finite element method into a series of finite-dimensional eigenvalue problems for multiple values of the wave vector parameter. The resulting optimization problem is large-scale and non-convex, with low regularity and non-differentiable objective. By restricting to appropriate eigenspaces, we reduce the large-scale non-convex optimization problem via reparametrization to a sequence of small-scale convex semidefinite programs (SDPs) for which modern SDP solvers can be efficiently applied. Numerical results are presented for both transverse magnetic (TM) and transverse electric (TE) polarizations at several frequency bands. The optimized structures exhibit patterns which go far beyond typical physical intuition on periodic media design.

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit.

Science.gov (United States)

Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

2016-01-08

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3  nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

Wave propagation in ordered, disordered, and nonlinear photonic band gap materials

Energy Technology Data Exchange (ETDEWEB)

Lidorikis, Elefterios [Iowa State Univ., Ames, IA (United States)

1999-12-10

Photonic band gap materials are artificial dielectric structures that give the promise of molding and controlling the flow of optical light the same way semiconductors mold and control the electric current flow. In this dissertation the author studied two areas of photonic band gap materials. The first area is focused on the properties of one-dimensional PBG materials doped with Kerr-type nonlinear material, while, the second area is focused on the mechanisms responsible for the gap formation as well as other properties of two-dimensional PBG materials. He first studied, in Chapter 2, the general adequacy of an approximate structure model in which the nonlinearity is assumed to be concentrated in equally-spaced very thin layers, or 6-functions, while the rest of the space is linear. This model had been used before, but its range of validity and the physical reasons for its limitations were not quite clear yet. He performed an extensive examination of many aspects of the model's nonlinear response and comparison against more realistic models with finite-width nonlinear layers, and found that the d-function model is quite adequate, capturing the essential features in the transmission characteristics. The author found one exception, coming from the deficiency of processing a rigid bottom band edge, i.e. the upper edge of the gaps is always independent of the refraction index contrast. This causes the model to miss-predict that there are no soliton solutions for a positive Kerr-coefficient, something known to be untrue.

Tunable radiation emitting semiconductor device

NARCIS (Netherlands)

2009-01-01

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

Optical Properties of Metal-Dielectric Structures Based on Photon-Crystal Opal Matrices

Science.gov (United States)

Vanin, A. I.; Lukin, A. E.; Romanov, S. G.; Solovyev, V. G.; Khanin, S. D.; Yanikov, M. V.

2018-04-01

Optical properties of novel metal-dielectric nanocomposite materials based on opal matrices have been investigated. The position of optical resonances of nanocomposites, obtained by embedding of silver into the opal matrix by the electrothermodiffusion method, is explained by the Bragg diffraction, and an asymmetric form of resonance curves is attributed to the Fano resonance. An anomalous transmission and absorption of light by hybrid plasmon-photonic layered heterostructures, which is apparently associated with excitation of surface plasmon-polaritons, propagating along "metal-dielectric" interfaces, was revealed.

One-dimensional self-confinement promotes polymorph selection in large-area organic semiconductor thin films

KAUST Repository

Giri, Gaurav

2014-04-16

A crystal\\'s structure has significant impact on its resulting biological, physical, optical and electronic properties. In organic electronics, 6,13(bis-triisopropylsilylethynyl)pentacene (TIPS-pentacene), a small-molecule organic semiconductor, adopts metastable polymorphs possessing significantly faster charge transport than the equilibrium crystal when deposited using the solution-shearing method. Here, we use a combination of high-speed polarized optical microscopy, in situ microbeam grazing incidence wide-angle X-ray-scattering and molecular simulations to understand the mechanism behind formation of metastable TIPS-pentacene polymorphs. We observe that thin-film crystallization occurs first at the air-solution interface, and nanoscale vertical spatial confinement of the solution results in formation of metastable polymorphs, a one-dimensional and large-area analogy to crystallization of polymorphs in nanoporous matrices. We demonstrate that metastable polymorphism can be tuned with unprecedented control and produced over large areas by either varying physical confinement conditions or by tuning energetic conditions during crystallization through use of solvent molecules of various sizes. © 2014 Macmillan Publishers Limited.

Prediction of inorganic superconductors with quasi-one-dimensional crystal structure

International Nuclear Information System (INIS)

Volkova, L M; Marinin, D V

2013-01-01

Models of superconductors having a quasi-one-dimensional crystal structure based on the convoluted into a tube Ginzburg sandwich, which comprises a layered dielectric–metal–dielectric structure, have been suggested. The critical crystal chemistry parameters of the Ginzburg sandwich determining the possibility of the emergence of superconductivity and the T c value in layered high-T c cuprates, which could have the same functions in quasi-one-dimensional fragments (sandwich-type tubes), have been examined. The crystal structures of known low-temperature superconductors, in which one can mark out similar quasi-one-dimensional fragments, have been analyzed. Five compounds with quasi-one-dimensional structures, which can be considered as potential parents of new superconductor families, possibly with high transition temperatures, have been suggested. The methods of doping and modification of these compounds are provided. (paper)

Surface plasmon polariton amplification in semiconductor-graphene-dielectric structure

Energy Technology Data Exchange (ETDEWEB)

Dadoenkova, Yuliya S. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Novgorod State University, Veliky Novgorod (Russian Federation); Donetsk Institute for Physics and Technology, Donetsk (Ukraine); Moiseev, Sergey G. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Ulyanovsk (Russian Federation); Abramov, Aleksei S. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Kadochkin, Aleksei S.; Zolotovskii, Igor O. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Institute of Nanotechnologies of Microelectronics of the Russian Academy of Sciences, 32A Leninskiy Prosp., 119991, Moscow (Russian Federation); Fotiadi, Andrei A. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Universite de Mons (Belgium)

2017-05-15

A mechanism of amplification of surface plasmon polaritons due to the transfer of electromagnetic energy from a drift current wave into a far-infrared surface wave propagating along a semiconductor-dielectric boundary in waveguide geometry is proposed. A necessary condition of the interaction of these waves is phase matching condition, i. e., when the phase velocity of the surface wave approaches the drift velocity of charge carriers. It is shown that in the spectral region of the surface plasmon polariton slowing-down its amplification coefficient can reach values substantially exceeding the ohmic loss coefficient of the surface wave in the structure. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Vapor Responsive One-Dimensional Photonic Crystals from Zeolite Nanoparticles and Metal Oxide Films for Optical Sensing

Science.gov (United States)

Lazarova, Katerina; Awala, Hussein; Thomas, Sebastien; Vasileva, Marina; Mintova, Svetlana; Babeva, Tsvetanka

2014-01-01

The preparation of responsive multilayered structures with quarter-wave design based on layer-by-layer deposition of sol-gel derived Nb2O5 films and spin-coated MEL type zeolite is demonstrated. The refractive indices (n) and thicknesses (d) of the layers are determined using non-linear curve fitting of the measured reflectance spectra. Besides, the surface and cross-sectional features of the multilayered structures are characterized by scanning electron microscopy (SEM). The quasi-omnidirectional photonic band for the multilayered structures is predicted theoretically, and confirmed experimentally by reflectance measurements at oblique incidence with polarized light. The sensing properties of the multilayered structures toward acetone are studied by measuring transmittance spectra prior and after vapor exposure. Furthermore, the potential of the one-dimensional photonic crystals based on the multilayered structure consisting of Nb2O5 and MEL type zeolite as a chemical sensor with optical read-out is discussed. PMID:25010695

Capsize of polarization in dilute photonic crystals.

Science.gov (United States)

Gevorkian, Zhyrair; Hakhoumian, Arsen; Gasparian, Vladimir; Cuevas, Emilio

2017-11-29

We investigate, experimentally and theoretically, polarization rotation effects in dilute photonic crystals with transverse permittivity inhomogeneity perpendicular to the traveling direction of waves. A capsize, namely a drastic change of polarization to the perpendicular direction is observed in a one-dimensional photonic crystal in the frequency range 10 ÷ 140 GHz. To gain more insights into the rotational mechanism, we have developed a theoretical model of dilute photonic crystal, based on Maxwell's equations with a spatially dependent two dimensional inhomogeneous dielectric permittivity. We show that the polarization's rotation can be explained by an optical splitting parameter appearing naturally in Maxwell's equations for magnetic or electric fields components. This parameter is an optical analogous of Rashba like spin-orbit interaction parameter present in quantum waves, introduces a correction to the band structure of the two-dimensional Bloch states, creates the dynamical phase shift between the waves propagating in the orthogonal directions and finally leads to capsizing of the initial polarization. Excellent agreement between theory and experiment is found.

ArCLight—A Compact Dielectric Large-Area Photon Detector

Directory of Open Access Journals (Sweden)

Martin Auger

2018-02-01

Full Text Available ArgonCube Light readout system (ArCLight is a novel device for detecting scintillation light over large areas with Photon Detection Efficiency (PDE of the order of a few percent. Its robust technological design allows for efficient use in large-volume particle detectors, such as Liquid Argon Time Projection Chambers (LArTPCs or liquid scintillator detectors. Due to its dielectric structure it can be placed inside volumes with high electric field. It could potentially replace vacuum PhotoMultiplier Tubes (PMTs in applications where high PDE is not required. The photon detection efficiency for a 10 × 10 cm2 detector prototype was measured to be in the range of 0.8% to 2.2% across the active area.

One-dimensional Tamm plasmons: Spatial confinement, propagation, and polarization properties

Science.gov (United States)

Chestnov, I. Yu.; Sedov, E. S.; Kutrovskaya, S. V.; Kucherik, A. O.; Arakelian, S. M.; Kavokin, A. V.

2017-12-01

Tamm plasmons are confined optical states at the interface of a metal and a dielectric Bragg mirror. Unlike conventional surface plasmons, Tamm plasmons may be directly excited by an external light source in both TE and TM polarizations. Here we consider the one-dimensional propagation of Tamm plasmons under long and narrow metallic stripes deposited on top of a semiconductor Bragg mirror. The spatial confinement of the field imposed by the stripe and its impact on the structure and energy of Tamm modes are investigated. We show that the Tamm modes are coupled to surface plasmons arising at the stripe edges. These plasmons form an interference pattern close to the bottom surface of the stripe that involves modification of both the energy and loss rate for the Tamm mode. This phenomenon is pronounced only in the case of TE polarization of the Tamm mode. These findings pave the way to application of laterally confined Tamm plasmons in optical integrated circuits as well as to engineering potential traps for both Tamm modes and hybrid modes of Tamm plasmons and exciton polaritons with meV depth.

Optical Tamm states in one-dimensional magnetophotonic structures.

Science.gov (United States)

Goto, T; Dorofeenko, A V; Merzlikin, A M; Baryshev, A V; Vinogradov, A P; Inoue, M; Lisyansky, A A; Granovsky, A B

2008-09-12

We demonstrate the existence of a spectrally narrow localized surface state, the so-called optical Tamm state, at the interface between one-dimensional magnetophotonic and nonmagnetic photonic crystals. The state is spectrally located inside the photonic band gaps of each of the photonic crystals comprising this magnetophotonic structure. This state is associated with a sharp transmission peak through the sample and is responsible for the substantial enhancement of the Faraday rotation for the corresponding wavelength. The experimental results are in excellent agreement with the theoretical predictions.

New generation of one-dimensional photonic crystal cavities as robust high-efficient frequency converter

Science.gov (United States)

Parvini, T. S.; Tehranchi, M. M.; Hamidi, S. M.

2017-07-01

An effective method is proposed to design finite one-dimensional photonic crystal cavities (PhCCs) as robust high-efficient frequency converter. For this purpose, we consider two groups of PhCCs which are constructed by stacking m nonlinear (LiNbO3) and n linear (air) layers with variable thicknesses. In the first group, the number of linear layers is less than the nonlinear layers by one and in the second group by two. The conversion efficiency is calculated as a function of the arrangement and thicknesses of the linear and nonlinear layers by benefiting from nonlinear transfer matrix method. Our numerical simulations show that for each group of PhCCs, there is a structural formula by which the configurations with the highest efficiency can be constructed for any values of m and n (i.e. any number of layers). The efficient configurations are equivalent to Fabry-Pérot cavities that depend on the relationship between m and n and the mirrors in two sides of these cavities can be periodic or nonperiodic. The conversion efficiencies of these designed PhCCs are more than 5 orders of magnitude higher than the perfect ones which satisfy photonic bandgap edge and quasi-phase matching. Moreover, the results reveal that conversion efficiencies of Fabry-Pérot cavities with non-periodic mirrors are one order of magnitude higher than those with periodic mirrors. The major physical mechanisms of the enhancement are quasi-phase matching effect, cavity effect induced by dispersive mirrors, and double resonance for the pump and the harmonic fields in defect state. We believe that this method is very beneficial to the design of high-efficient compact optical frequency converters.

Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors

International Nuclear Information System (INIS)

Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

2012-01-01

Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance—voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5∼9.5)×10 10 cm −2 ·eV −1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm −2 . Compared with the AlGaN/GaN metal—semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from −5.5 V to −3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG). (condensed matter: structural, mechanical, and thermal properties)

Photon management assisted by surface waves on photonic crystals

CERN Document Server

Angelini, Angelo

2017-01-01

This book illustrates original pathways to manipulate light at the nanoscale by means of surface electromagnetic waves (here, Bloch surface waves, BSWs) on planar dielectric multilayers, also known as one-dimensional photonic crystals. This approach is particularly valuable as it represents an effective alternative to the widely exploited surface plasmon paradigm. After a brief overview on the fundamentals of BSWs, several significant applications of BSW-sustaining structures are described. Particular consideration is given to the propagation, guiding, and diffraction of BSW-coupled radiation. Further, the interaction of organic emitters with BSWs on planar and corrugated multilayers is investigated, including fluorescence beaming in free space. To provide greater insight into sensing applications, an illustrative example of fluorescent microarray-based detection is presented. The book is intended for scientists and researchers working on photon management opportunities in fields such as biosensing, optical c...

Anisotropic exchange interaction induced by a single photon in semiconductor microcavities

Science.gov (United States)

Chiappe, G.; Fernández-Rossier, J.; Louis, E.; Anda, E. V.

2005-12-01

We investigate coupling of localized spins in a semiconductor quantum dot embedded in a microcavity. The lowest cavity mode and the quantum dot exciton are coupled and close in energy, forming a polariton. The fermions forming the exciton interact with localized spins via exchange. Exact diagonalization of a Hamiltonian in which photons, spins, and excitons are treated quantum mechanically shows that a single polariton induces a sizable indirect anisotropic exchange interaction between spins. At sufficiently low temperatures strong ferromagnetic correlations show up without an appreciable increase in exciton population. In the case of a (Cd,Mn)Te quantum dot, Mn-Mn ferromagnetic coupling is still significant at 1 K : spin-spin correlation around 3 for exciton occupation smaller than 0.3. We find that the interaction mediated by photon-polaritons is 10 times stronger than the one induced by a classical field for equal Rabi splitting.

Analysis of cutoff frequency in a one-dimensional superconductor-metamaterial photonic crystal

International Nuclear Information System (INIS)

Aly, Arafa H; Aghajamali, Alireza; Elsayed, Hussein A.; Mobarak, Mohamed

2016-01-01

Highlights: • Our results show that the appearance of the cutoff frequency, below which the incident electromagnetic waves cannot propagate in the structure. We demonstrate that the cutoff frequency shows an upward trend as the thickness of the superconductor layer as well as the thickness of the metamaterial increase. • The cutoff frequency can be tuned by the operating temperature. Our structures are good candidates for many optical devices such as optical filters, switches, temperature controlled optical shutter, and among photoelectronic applications in gigahertz. - Abstract: In this paper, using the two-fluid model and the characteristic matrix method, we investigate the transmission characteristics of the one-dimensional photonic crystal. Our structure composed of the layers of low-temperature superconductor material (NbN) and double-negative metamaterial. We target studying the effect of many parameters such as the thickness of the superconductor material, the thickness of the metamaterial layer, and the operating temperature. We show that the cut-off frequency can be tuned efficiently by the operating temperature as well as the thicknesses of the constituent materials.

Optical properties of low-dimensional materials

CERN Document Server

Ogawa, T

1998-01-01

This book surveys recent theoretical and experimental studies of optical properties of low-dimensional materials. As an extended version of Optical Properties of Low-Dimensional Materials (Volume 1, published in 1995 by World Scientific), Volume 2 covers a wide range of interesting low-dimensional materials including both inorganic and organic systems, such as disordered polymers, deformable molecular crystals, dilute magnetic semiconductors, SiGe/Si short-period superlattices, GaAs quantum wires, semiconductor microcavities, and photonic crystals. There are excellent review articles by promis

Effect of dielectric confinement on optical properties of colloidal nanostructures

Energy Technology Data Exchange (ETDEWEB)

Rodina, A. V., E-mail: anna.rodina@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Efros, Al. L., E-mail: efros@nrl.navy.mil [Naval Research Laboratory (United States)

2016-03-15

We review the effects caused by a large difference in the dielectric constants of a semiconductor and its surrounding in colloidal semiconductor nanostructures (NSs) with various shapes, e.g., nanocrystals, nanorods, and nanoplatelets. The difference increases the electron–hole interaction and consequently the exciton binding energy and its oscillator transition strength. On the other hand, this difference reduces the electric field of a photon penetrating the NS (the phenomenon is called the local field effect) and reduces the photon coupling to an exciton. We show that the polarization properties of the individual colloidal NSs as well as of their randomly oriented ensemble are determined both by the anisotropy of the local field effect and by the symmetry of the exciton states participating in optical transitions. The calculations explain the temperature and time dependences of the degree of linear polarization measured in an ensemble of CdSe nanocrystals.

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

Science.gov (United States)

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

Mode selection in two-dimensional Bragg resonators based on planar dielectric waveguides

International Nuclear Information System (INIS)

Baryshev, V R; Ginzburg, N S; Zaslavskii, V Yu; Malkin, A M; Sergeev, A S; Thumm, M

2009-01-01

Two-dimensional Bragg resonators based on planar dielectric waveguides are analysed. It is shown that the doubly periodic corrugation deposited on the dielectric surface in the form of two gratings with translational vectors directed perpendicular to each other ensures effective selection of modes along two coordinates at large Fresnel parameters. This result is obtained both by the method of coupled waves (geometrical optics approximation) and by the direct numerical simulations. Two-dimensional Bragg resonators make it possible to fabricate two-dimensional distributed feedback lasers and to provide generation of spatially coherent radiation in large-volume active media. (waveguides)

Dynamical theory of single-photon transport in a one-dimensional waveguide coupled to identical and nonidentical emitters

Science.gov (United States)

Liao, Zeyang; Nha, Hyunchul; Zubairy, M. Suhail

2016-11-01

We develop a general dynamical theory for studying a single-photon transport in a one-dimensional (1D) waveguide coupled to multiple emitters which can be either identical or nonidentical. In this theory, both the effects of the waveguide and non-waveguide vacuum modes are included. This theory enables us to investigate the propagation of an emitter excitation or an arbitrary single-photon pulse along an array of emitters coupled to a 1D waveguide. The dipole-dipole interaction induced by the non-waveguide modes, which is usually neglected in the literature, can significantly modify the dynamics of the emitter system as well as the characteristics of the output field if the emitter separation is much smaller than the resonance wavelength. Nonidentical emitters can also strongly couple to each other if their energy difference is less than or of the order of the dipole-dipole energy shift. Interestingly, if their energy difference is close but nonzero, a very narrow transparency window around the resonance frequency can appear which does not occur for identical emitters. This phenomenon may find important applications in quantum waveguide devices such as optical switches and ultranarrow single-photon frequency comb generator.

Tunable all-angle negative refraction and photonic band gaps in two-dimensional plasma photonic crystals with square-like Archimedean lattices

International Nuclear Information System (INIS)

Zhang, Hai-Feng; Liu, Shao-Bin; Jiang, Yu-Chi

2014-01-01

In this paper, the tunable all-angle negative refraction and photonic band gaps (PBGs) in two types of two-dimensional (2D) plasma photonic crystals (PPCs) composed of homogeneous plasma and dielectric (GaAs) with square-like Archimedean lattices (ladybug and bathroom lattices) for TM wave are theoretically investigated based on a modified plane wave expansion method. The type-1 structure is dielectric rods immersed in the plasma background, and the complementary structure is named as type-2 PPCs. Theoretical simulations demonstrate that the both types of PPCs with square-like Archimedean lattices have some advantages in obtaining the higher cut-off frequency, the larger PBGs, more number of PBGs, and the relative bandwidths compared to the conventional square lattices as the filling factor or radius of inserted rods is same. The influences of plasma frequency and radius of inserted rod on the properties of PBGs for both types of PPCs also are discussed in detail. The calculated results show that PBGs can be manipulated by the parameters as mentioned above. The possibilities of all-angle negative refraction in such two types of PPCs at low bands also are discussed. Our calculations reveal that the all-angle negative phenomena can be observed in the first two TM bands, and the frequency range of all-angle negative refraction can be tuned by changing plasma frequency. Those properties can be used to design the optical switching and sensor

Transition between metamaterial and photonic-crystal behavior in arrays of dielectric rods

Czech Academy of Sciences Publication Activity Database

Dominec, Filip; Kadlec, Christelle; Němec, Hynek; Kužel, Petr; Kadlec, Filip

2014-01-01

Roč. 22, č. 25 (2014), s. 30492-30503 ISSN 1094-4087 R&D Projects: GA ČR(CZ) GA14-25639S Institutional support: RVO:68378271 Keywords : metamaterials * photonic crystals * negative refractive index * dielectrics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.488, year: 2014

Preparation and dielectric investigation of organic metal insulator semiconductor (MIS) structures with a ferroelectric polymer

Energy Technology Data Exchange (ETDEWEB)

Kalbitz, Rene; Fruebing, Peter; Gerhard, Reimund [Department of Physics and Astronomy, University of Potsdam (Germany); Taylor, Martin [School of Electronic Engineering, Bangor University (United Kingdom)

2010-07-01

Ferroelectric field effect transistors (FeFETs) offer the prospect of an organic-based memory device. Since the charge transport in the semiconductor is confined to the interface region between the insulator and the semiconductor, the focus of the present study was on the investigation of this region in metal-insulator-semiconductor (MIS) capacitors using dielectric spectroscopy. Capacitance-Voltage (C-V) measurements at different frequencies as well as capacitance-frequency (C-f) measurements after applying different poling voltages were carried out. The C-V measurements yielded information about the frequency dependence of the depletion layer width as well as the number of charges stored at the semiconductor/ insulator interface. The results are compared to numerical calculations based on a model introduced by S. L. Miller (JAP, 72(12), 1992). The C-f measurements revealed three main relaxation processes. An equivalent circuit has been developed to model the frequency response of the MIS capacitor. With this model the origin of the three relaxations may be deduced.

Analysis of transmittance properties in 1D hybrid dielectric photonic crystal containing superconducting thin films

Science.gov (United States)

Soltani, Osswa; Zaghdoudi, Jihene; Kanzari, Mounir

2018-06-01

By means of two fluid model and transfer matrix method (TMM), we investigate theoretically the transmittance properties of a defective hybrid dielectric-dielectric photonic crystal that contains a superconducting material as a defect layer. The considered hybrid photonic structure is: H(LH) 7(HLSLH) P H(LH) 7 , where H is the high refractive index dielectric, L is the low refractive index dielectric, S is the superconducting material and P is the repetitive number. The results show that the variation of the number and the positions of the transmissions modes depend strongly on the repetitive number P, the temperature T and the thickness of the layer S. An improvement of the spectral response is obtained with the exponential gradation of layer thicknesses dj =d0 + βejα , where d0 is the initial thickness of the layer j, α and β are two particular constants for each material. In addition, the effect of the incident angle for both transverse electric (TE) and transverse magnetic (TM) polarizations on the transmittance spectrum is discussed. As a result, we propose a tunable narrow stop-band polychromatic filter that covers the visible wavelength.

Exciton center-of-mass localization and dielectric environment effect in monolayer WS2

Science.gov (United States)

Hichri, Aïda; Ben Amara, Imen; Ayari, Sabrine; Jaziri, Sihem

2017-06-01

The ultrathin transition metal dichalcogenides (TMDs) have emerged as promising materials for various applications using two dimensional semiconductors. They have attracted increasing attention due to their unique optical properties originate from neutral and charged excitons. In this paper, we study the strong localization of exciton center-of-mass motion within random potential fluctuations caused by the monolayer defects. Here, we report negatively charged exciton formation in monolayer TMDs, notably tungsten disulfide WS2. Our theory is based on an effective mass model of neutral and charged excitons, parameterized by ab-initio calculations. Taking into the account the strong correlation between the monolayer WS2 and the surrounding dielectric environment, our theoretical results are in good agreement with one-photon photoluminescence (PL) and reflectivity measurements. We also show that the exciton state with p-symmetry, experimentally observed by two-photon PL emission, is energetically below the 2s-state. We use the equilibrium mass action law, to quantify the relative weight of exciton and trion PL. We show that exciton and trion emission can be tuned and controlled by external parameters like temperature, pumping, and injection electrons. Finally, in comparison with experimental measurements, we show that exciton emission in monolayer tungsten dichalcogenides is substantially reduced. This feature suggests that free exciton can be trapped in disordered potential wells to form a localized exciton and therefore offers a route toward novel optical properties.

Dielectric spectroscopy studies of low-disorder and low-dimensional materials

OpenAIRE

Tripathi, Pragya

2016-01-01

In this thesis we employ dielectric spectroscopy (in different implementations) to study the dielectric properties of different materials ranging from completely disordered supercooled liquids to low-disorder solids with only ratcheting reorientational motions, to low-dimensional systems such as thin films or needle-like crystals. The probed material properties include the electrical conductivity, the space-charge processes due to sample heterogeneities, molecular dynamics, hydrogen-bond dyna...

Solitons in one-dimensional charge density wave systems

International Nuclear Information System (INIS)

Su, W.P.

1981-01-01

Theoretical research on one dimensional charge density wave systems is outlined. A simple coupled electron-photon Hamiltonian is studied including a Green's function approach, molecular dynamics, and Monte Carlo path integral method. As in superconductivity, the nonperturbative nature of the system makes the physical ground states and low energy excitations drastically different from the bare electrons and phonons. Solitons carry quantum numbers which are entirely different from those of the bare electrons and holes. The fractional charge character of the solitons is an example of this fact. Solitons are conveniently generated by doping material with donors or acceptors or by photon absorption. Most predictions of the theory are in qualitative agreement with experiments. The one dimensional charge density wave system has potential technological importance and a possible role in uncovering phenomena which might have implications in relativistic field theory and elementary particle physics

Modelling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects

International Nuclear Information System (INIS)

Morozovska, Anna N; Eliseev, Eugene A

2004-01-01

We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. We have modified the Landau-Ginsburg approach and shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic values and the various hysteresis-loop deformations (constricted and double loops) have been obtained in the framework of our model. The obtained results quantitatively explain the ferroelectric switching in such ferroelectric materials as thick PZT films

Tunable optical response at the plasmon-polariton frequency in dielectric-graphene-metamaterial systems

Science.gov (United States)

Calvo-Velasco, D. M.; Porras-Montenegro, N.

2018-04-01

By using the scattering matrix formalism, it is studied the optical properties of one dimensional photonic crystals made of multiple layers of dielectric and uniaxial anisotropic single negative electric metamaterial with Drude type responses, with inclusions of graphene in between the dielectric-dielectric interfaces (DGMPC). The transmission spectra for transverse electric (TE) and magnetic (TM) polarization are presented as a function of the incidence angle, the graphene chemical potential, and the metamaterial plasma frequencies. It is found for the TM polarization the tunability of the DGMPC optical response with the graphene chemical potential, which can be observed by means of transmission or reflexion bands around the metamaterial plasmon-polariton frequency, with bandwidths depending on both the incidence angle and the metamaterial plasma frequency. Also, the transmission band is observed when losses in the metamaterial slabs are considered for finite systems. The conditions for the appearance of these bands are shown analytically. We consider this work contributes to open new possibilities to the design of photonic devices with DGMPCs.

Photon and carrier management design for nonplanar thin-film copper indium gallium diselenide photovoltaics

Science.gov (United States)

Atwater, Harry A.; Callahan, Dennis; Bukowsky, Colton

2017-11-21

Photovoltaic structures are disclosed. The structures can comprise randomly or periodically structured layers, a dielectric layer to reduce back diffusion of charge carriers, and a metallic layer to reflect photons back towards the absorbing semiconductor layers. This design can increase efficiency of photovoltaic structures. The structures can be fabricated by nanoimprint.

Few-Photon Model of the Optical Emission of Semiconductor Quantum Dots

Science.gov (United States)

Richter, Marten; Carmele, Alexander; Sitek, Anna; Knorr, Andreas

2009-08-01

The Jaynes-Cummings model provides a well established theoretical framework for single electron two level systems in a radiation field. Similar exactly solvable models for semiconductor light emitters such as quantum dots dominated by many particle interactions are not known. We access these systems by a generalized cluster expansion, the photon-probability cluster expansion: a reliable approach for few-photon dynamics in many body electron systems. As a first application, we discuss vacuum Rabi oscillations and show that their amplitude determines the number of electrons in the quantum dot.

Electron-hole liquid in semiconductors and low-dimensional structures

Science.gov (United States)

Sibeldin, N. N.

2017-11-01

The condensation of excitons into an electron-hole liquid (EHL) and the main EHL properties in bulk semiconductors and low-dimensional structures are considered. The EHL properties in bulk materials are discussed primarily in qualitative terms based on the experimental results obtained for germanium and silicon. Some of the experiments in which the main EHL thermodynamic parameters (density and binding energy) have been obtained are described and the basic factors that determine these parameters are considered. Topics covered include the effect of external perturbations (uniaxial strain and magnetic field) on EHL stability; phase diagrams for a nonequilibrium exciton-gas-EHL system; information on the size and concentration of electron-hole drops (EHDs) under various experimental conditions; the kinetics of exciton condensation and of recombination in the exciton-gas-EHD system; dynamic EHD properties and the motion of EHDs under the action of external forces; the properties of giant EHDs that form in potential wells produced by applying an inhomogeneous strain to the crystal; and effects associated with the drag of EHDs by nonequilibrium phonons (phonon wind), including the dynamics and formation of an anisotropic spatial structure of the EHD cloud. In discussing EHLs in low-dimensional structures, a number of studies are reviewed on the observation and experimental investigation of phenomena such as spatially indirect (dipolar) electron-hole and exciton (dielectric) liquids in GaAs/AlGaAs structures with double quantum wells (QWs), EHDs containing only a few electron-hole pairs (dropletons), EHLs in type-I silicon QWs, and spatially direct and dipolar EHLs in type-II silicon-germanium heterostructures.

Magneto-optical Faraday rotation of semiconductor nanoparticles embedded in dielectric matrices.

Science.gov (United States)

Savchuk, Andriy I; Stolyarchuk, Ihor D; Makoviy, Vitaliy V; Savchuk, Oleksandr A

2014-04-01

Faraday rotation has been studied for CdS, CdTe, and CdS:Mn semiconductor nanoparticles synthesized by colloidal chemistry methods. Additionally these materials were prepared in a form of semiconductor nanoparticles embedded in polyvinyl alcohol films. Transmission electron microscopy and atomic force microscopy analyses served as confirmation of nanocrystallinity and estimation of the average size of the nanoparticles. Spectral dependence of the Faraday rotation for the studied nanocrystals and nanocomposites is correlated with a blueshift of the absorption edge due to the confinement effect in zero-dimensional structures. Faraday rotation spectra and their temperature behavior in Mn-doped nanocrystals demonstrates peculiarities, which are associated with s, p-d exchange interaction between Mn²⁺ ions and band carriers in diluted magnetic semiconductor nanostructures.

Photonic band gaps of porous solids

International Nuclear Information System (INIS)

Biswas, R.; Sigalas, M. M.; Subramania, G.; Soukoulis, C. M.; Ho, K.-M.

2000-01-01

Colloidal inverse photonic crystals composed of ordered lattices of air spheres in a high dielectric background are found to have three-dimensional photonic gaps for face-centered cubic, hexgaonal close-packed, and double hexagonal close-packed stacking sequences. Conditions for the occurrence of the complete gap are a sufficient dielectric contrast and a geometry near close packed. Although the lower pseudogaps of these stacking sequences differ, the lowest stop band in the stacking direction is insensitive to the stacking sequence; hence their experimental reflection should be similar. Transmission calculations with structural disorder show the lower pseudogap is relatively unaffected but the higher gap is very difficult to observe with moderate disorder. (c) 2000 The American Physical Society

Photonic Paint Developed with Metallic Three-Dimensional Photonic Crystals

Science.gov (United States)

Sun, Po; Williams, John D.

2012-01-01

This work details the design and simulation of an inconspicuous photonic paint that can be applied onto an object for anticounterfeit and tag, track, and locate (TTL) applications. The paint consists of three-dimensional metallic tilted woodpile photonic crystals embedded into a visible and infrared transparent polymer film, which can be applied to almost any surface. The tilted woodpile photonic crystals are designed with a specific pass band detectable at nearly all incident angles of light. When painted onto a surface, these crystals provide a unique reflective infra-red optical signature that can be easily observed and recorded to verify the location or contents of a package.

Plasmonic Photonic-Crystal Slabs: Visualization of the Bloch Surface Wave Resonance for an Ultrasensitive, Robust and Reusable Optical Biosensor

Directory of Open Access Journals (Sweden)

Alexander V. Baryshev

2014-12-01

Full Text Available A one-dimensional photonic crystal (PhC with termination by a metal film—a plasmonic photonic-crystal slab—has been theoretically analyzed for its optical response at a variation of the dielectric permittivity of an analyte and at a condition simulating the molecular binding event. Visualization of the Bloch surface wave resonance (SWR was done with the aid of plasmon absorption in a dielectric/metal/dielectric sandwich terminating a PhC. An SWR peak in spectra of such a plasmonic photonic crystal (PPhC slab comprising a noble or base metal layer was shown to be sensitive to a negligible variation of refractive index of a medium adjoining to the slab. As a consequence, the considered PPhC-based optical sensors exhibited an enhanced sensitivity and a good robustness in comparison with the conventional surface-plasmon and Bloch surface wave sensors. The PPhC biosensors can be of practical importance because the metal layer is protected by a capping dielectric layer from contact with analytes and, consequently, from deterioration.

Semiconductor inversion contact - a new heterogeneous structure with two-dimensional zero-mass electron gas

International Nuclear Information System (INIS)

Volkov, B.A.; Pankratov, O.A.

1986-01-01

Semiconductor inversion junction, presenting the contact of materials in which energy levels corresponding to band edges are mutually inverted. At that, the symmetry of wave function of conductivity band in one material coincides with the symmetry of valence band of the other and vice versa. Specificity of the inversion contact is determined by the presence of electron states independent of the transition band type, which are similar to soliton ones in one-dimensional systems. In the region of the junction the states are characterized by linear massless spectrum nondegenerate in spin. Energy spectrum of the inversion junction for semiconductors of the Pb 1-x Sn y Te x type is considered

Two-dimensional Semiconductor-Superconductor Hybrids

DEFF Research Database (Denmark)

Suominen, Henri Juhani

This thesis investigates hybrid two-dimensional semiconductor-superconductor (Sm-S) devices and presents a new material platform exhibiting intimate Sm-S coupling straight out of the box. Starting with the conventional approach, we investigate coupling superconductors to buried quantum well....... To overcome these issues we integrate the superconductor directly into the semiconducting material growth stack, depositing it in-situ in a molecular beam epitaxy system under high vacuum. We present a number of experiments on these hybrid heterostructures, demonstrating near unity interface transparency...

Characterization of Strong Light-Matter Coupling in Semiconductor Quantum-Dot Microcavities via Photon-Statistics Spectroscopy

Science.gov (United States)

Schneebeli, L.; Kira, M.; Koch, S. W.

2008-08-01

It is shown that spectrally resolved photon-statistics measurements of the resonance fluorescence from realistic semiconductor quantum-dot systems allow for high contrast identification of the two-photon strong-coupling states. Using a microscopic theory, the second-rung resonance of Jaynes-Cummings ladder is analyzed and optimum excitation conditions are determined. The computed photon-statistics spectrum displays gigantic, experimentally robust resonances at the energetic positions of the second-rung emission.

Cascaded two-photon nonlinearity in a one-dimensional waveguide with multiple two-level emitters

Science.gov (United States)

Roy, Dibyendu

2013-01-01

We propose and theoretically investigate a model to realize cascaded optical nonlinearity with few atoms and photons in one-dimension (1D). The optical nonlinearity in our system is mediated by resonant interactions of photons with two-level emitters, such as atoms or quantum dots in a 1D photonic waveguide. Multi-photon transmission in the waveguide is nonreciprocal when the emitters have different transition energies. Our theory provides a clear physical understanding of the origin of nonreciprocity in the presence of cascaded nonlinearity. We show how various two-photon nonlinear effects including spatial attraction and repulsion between photons, background fluorescence can be tuned by changing the number of emitters and the coupling between emitters (controlled by the separation). PMID:23948782

Analyzing the photonic band gaps in two-dimensional plasma photonic crystals with fractal Sierpinski gasket structure based on the Monte Carlo method

Energy Technology Data Exchange (ETDEWEB)

Zhang, Hai-Feng, E-mail: hanlor@163.com [College of Optoelectronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023 ,China (China); Key Laboratory of Radar Imaging and Microwave Photonics (Nanjing Univ. Aeronaut. Astronaut.), Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016 (China); Liu, Shao-Bin [Key Laboratory of Radar Imaging and Microwave Photonics (Nanjing Univ. Aeronaut. Astronaut.), Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016 (China)

2016-08-15

In this paper, the properties of photonic band gaps (PBGs) in two types of two-dimensional plasma-dielectric photonic crystals (2D PPCs) under a transverse-magnetic (TM) wave are theoretically investigated by a modified plane wave expansion (PWE) method where Monte Carlo method is introduced. The proposed PWE method can be used to calculate the band structures of 2D PPCs which possess arbitrary-shaped filler and any lattice. The efficiency and convergence of the present method are discussed by a numerical example. The configuration of 2D PPCs is the square lattices with fractal Sierpinski gasket structure whose constituents are homogeneous and isotropic. The type-1 PPCs is filled with the dielectric cylinders in the plasma background, while its complementary structure is called type-2 PPCs, in which plasma cylinders behave as the fillers in the dielectric background. The calculated results reveal that the enough accuracy and good convergence can be obtained, if the number of random sampling points of Monte Carlo method is large enough. The band structures of two types of PPCs with different fractal orders of Sierpinski gasket structure also are theoretically computed for a comparison. It is demonstrate that the PBGs in higher frequency region are more easily produced in the type-1 PPCs rather than in the type-2 PPCs. Sierpinski gasket structure introduced in the 2D PPCs leads to a larger cutoff frequency, enhances and induces more PBGs in high frequency region. The effects of configurational parameters of two types of PPCs on the PBGs are also investigated in detail. The results show that the PBGs of the PPCs can be easily manipulated by tuning those parameters. The present type-1 PPCs are more suitable to design the tunable compacted devices.

Single-file water as a one-dimensional Ising model

Energy Technology Data Exchange (ETDEWEB)

Koefinger, Juergen [Laboratory of Chemical Physics, Bldg 5, National Institute of Diabetes and Digestive and Kidney Diseases, National Institutes of Health, Bethesda, MD 20892 (United States); Dellago, Christoph, E-mail: koefingerj@mail.nih.go [Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria)

2010-09-15

We show that single-file water in nanopores can be viewed as a one-dimensional (1D) Ising model, and we investigate, on the basis of this, the static dielectric response of a chain of hydrogen-bonded water molecules to an external field. To achieve this, we use a recently developed dipole lattice model that accurately captures the free energetics of nanopore water. In this model, the total energy of the system can be expressed as the sum of the effective interactions of chain ends and orientational defects. Neglecting these interactions, we essentially obtain the 1D Ising model, which allows us to derive analytical expressions for the free energy as a function of the total dipole moment and for the dielectric susceptibility. Our expressions, which agree very well with simulation results, provide the basis for the interpretation of future dielectric spectroscopy experiments on water-filled nanopore membranes.

Semiconductor-to-metallic flipping in a ZnFe2O4–graphene based smart nano-system: Temperature/microwave magneto-dielectric spectroscopy

International Nuclear Information System (INIS)

Ameer, Shahid; Gul, Iftikhar Hussain; Mahmood, Nasir; Mujahid, Muhammad

2015-01-01

Zn-(FeO 2 ) 2 –graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis with different percentages of graphene. The structure of the nanocomposite was confirmed through X-ray diffraction, micro-Raman scattering spectroscopy, Ultraviolet–Visible spectroscopy, and Fourier transform infrared spectroscopy. The structural growth and morphological aspects were analyzed using scanning/transmission electron microscopy, revealing marvelous micro-structural features of the assembled nano-system resembling a maple leaf. To determine the composition, energy dispersive spectroscopy and X-ray photoelectron spectroscopy were used. Microwave magneto-dielectric spectroscopy revealed the improved dielectric properties of the nano-composite compared to those of the parent functional nanocrystals. Temperature gradient dielectric spectroscopy was used over the spectral range from 100 Hz to 5 MHz to reveal the phenomenological effect that the nanosystem flips from its usual semiconductor nature to a metallic nature with sensing temperature. Electrical conductivity and dielectric analysis indicated that the dielectric loss and the dielectric permittivity increased at room temperature. This extraordinary switching capability of the functionalized graphene nanosystem opens up a new dimension for engineering advanced and efficient smart composite materials. - Graphical abstract: Display Omitted - Highlights: • Zn-(FeO 2 ) 2 –graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis. • The synthesized nano-system exhibits marvelous leaf like microstructure. • These nano-composites show improved magneto dielectric response. • This engineered smart nano-system shows phenomenological flipping from semiconductor like nature to metallic behavior

Universal Curve of Optimum Thermoelectric Figures of Merit for Bulk and Low-Dimensional Semiconductors

Science.gov (United States)

Hung, Nguyen T.; Nugraha, Ahmad R. T.; Saito, Riichiro

2018-02-01

This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus. Analytical formulas for thermoelectric figures of merit and power factors are derived based on the one-band model. We find that there is a direct relationship between the optimum figures of merit and the optimum power factors of semiconductors despite of the fact that the two quantities are generally given by different values of chemical potentials. By introducing a dimensionless parameter consisting of the optimum power factor and lattice thermal conductivity (without electronic thermal conductivity), it is possible to unify optimum figures of merit of both bulk and low-dimensional semiconductors into a single universal curve that covers many materials with different dimensionalities.

Approximate Approaches to the One-Dimensional Finite Potential Well

Science.gov (United States)

Singh, Shilpi; Pathak, Praveen; Singh, Vijay A.

2011-01-01

The one-dimensional finite well is a textbook problem. We propose approximate approaches to obtain the energy levels of the well. The finite well is also encountered in semiconductor heterostructures where the carrier mass inside the well (m[subscript i]) is taken to be distinct from mass outside (m[subscript o]). A relevant parameter is the mass…

Polaritonic normal-mode splitting and light localization in a one-dimensional nanoguide

NARCIS (Netherlands)

Haakh, Harald R.; Faez, Sanli; Sandoghdar, Vahid

2016-01-01

We theoretically investigate the interaction of light and a collection of emitters in a subwavelength one-dimensional medium (nanoguide), where enhanced emitter-photon coupling leads to efficient multiple scattering of photons. We show that the spectrum of the transmitted light undergoes normal-mode

Frequency splitter based on the directional emission from surface modes in dielectric photonic crystal structures.

Science.gov (United States)

Tasolamprou, Anna C; Zhang, Lei; Kafesaki, Maria; Koschny, Thomas; Soukoulis, Costas M

2015-06-01

We demonstrate the numerical design and the experimental validation of frequency dependent directional emission from a dielectric photonic crystal structure. The wave propagates through a photonic crystal line-defect waveguide, while a surface layer at the termination of the photonic crystal enables the excitation of surface modes and a subsequent grating layer transforms the surface energy into outgoing propagating waves of the form of a directional beam. The angle of the beam is controlled by the frequency and the structure operates as a frequency splitter in the intermediate and far field region.

Properties of entangled photon pairs generated in one-dimensional nonlinear photonic-band-gap structures

International Nuclear Information System (INIS)

Perina, Jan Jr.; Centini, Marco; Sibilia, Concita; Bertolotti, Mario; Scalora, Michael

2006-01-01

We have developed a rigorous quantum model of spontaneous parametric down-conversion in a nonlinear 1D photonic-band-gap structure based upon expansion of the field into monochromatic plane waves. The model provides a two-photon amplitude of a created photon pair. The spectra of the signal and idler fields, their intensity profiles in the time domain, as well as the coincidence-count interference pattern in a Hong-Ou-Mandel interferometer are determined both for cw and pulsed pumping regimes in terms of the two-photon amplitude. A broad range of parameters characterizing the emitted down-converted fields can be used. As an example, a structure composed of 49 layers of GaN/AlN is analyzed as a suitable source of photon pairs having high efficiency

Finite element method analysis of band gap and transmission of two-dimensional metallic photonic crystals at terahertz frequencies.

Science.gov (United States)

Degirmenci, Elif; Landais, Pascal

2013-10-20

Photonic band gap and transmission characteristics of 2D metallic photonic crystals at THz frequencies have been investigated using finite element method (FEM). Photonic crystals composed of metallic rods in air, in square and triangular lattice arrangements, are considered for transverse electric and transverse magnetic polarizations. The modes and band gap characteristics of metallic photonic crystal structure are investigated by solving the eigenvalue problem over a unit cell of the lattice using periodic boundary conditions. A photonic band gap diagram of dielectric photonic crystal in square lattice array is also considered and compared with well-known plane wave expansion results verifying our FEM approach. The photonic band gap designs for both dielectric and metallic photonic crystals are consistent with previous studies obtained by different methods. Perfect match is obtained between photonic band gap diagrams and transmission spectra of corresponding lattice structure.

Proximity Induced Superconducting Properties in One and Two Dimensional Semiconductors

DEFF Research Database (Denmark)

Kjærgaard, Morten

This report is concerned with the properties of one and two dimensional semiconducting materials when brought into contact with a superconductor. Experimentally we study the 2D electron gas in an InGaAs/InAs heterostructure with aluminum grown in situ on the surface, and theoretically we show tha...

Topological photonic crystals with zero Berry curvature

Science.gov (United States)

Liu, Feng; Deng, Hai-Yao; Wakabayashi, Katsunori

2018-02-01

Topological photonic crystals are designed based on the concept of Zak's phase rather than the topological invariants such as the Chern number and spin Chern number, which rely on the existence of a nonvanishing Berry curvature. Our photonic crystals (PCs) are made of pure dielectrics and sit on a square lattice obeying the C4 v point-group symmetry. Two varieties of PCs are considered: one closely resembles the electronic two-dimensional Su-Schrieffer-Heeger model, and the other continues as an extension of this analogy. In both cases, the topological transitions are induced by adjusting the lattice constants. Topological edge modes (TEMs) are shown to exist within the nontrivial photonic band gaps on the termination of those PCs. The high efficiency of these TEMs transferring electromagnetic energy against several types of disorders has been demonstrated using the finite-element method.

Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)

2016-05-03

This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

Impact of one-dimensional photonic crystal back reflector in thin-film c-Si solar cells on efficiency

Science.gov (United States)

Jalali, Tahmineh

2018-05-01

In this work, the effect of one-dimensional photonic crystal on optical absorption, which is implemented at the back side of thin-film crystalline silicon (c-Si) solar cells, is extensively discussed. The proposed structure acts as a Bragg reflector which reflects back light to the active layer as well as nanograting which couples the incident light to enhance optical absorption. To understand the optical mechanisms responsible for the enhancement of optical absorption, quantum efficiency and current density for all structures are calculated and the effect of influential parameters, such as grating period is investigated. The results confirm that our proposed structure have a great deal for substantial efficiency enhancement in a broad range from 400 to 1100 nm.

Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces

Science.gov (United States)

Meng, Andrew C.; Tang, Kechao; Braun, Michael R.; Zhang, Liangliang; McIntyre, Paul C.

2017-10-01

The performance of nanostructured semiconductors is frequently limited by interface defects that trap electronic carriers. In particular, high aspect ratio geometries dramatically increase the difficulty of using typical solid-state electrical measurements (multifrequency capacitance- and conductance-voltage testing) to quantify interface trap densities (D it). We report on electrochemical impedance spectroscopy (EIS) to characterize the energy distribution of interface traps at metal oxide/semiconductor interfaces. This method takes advantage of liquid electrolytes, which provide conformal electrical contacts. Planar Al2O3/p-Si and Al2O3/p-Si0.55Ge0.45 interfaces are used to benchmark the EIS data against results obtained from standard electrical testing methods. We find that the solid state and EIS data agree very well, leading to the extraction of consistent D it energy distributions. Measurements carried out on pyramid-nanostructured p-Si obtained by KOH etching followed by deposition of a 10 nm ALD-Al2O3 demonstrate the application of EIS to trap characterization of a nanostructured dielectric/semiconductor interface. These results show the promise of this methodology to measure interface state densities for a broad range of semiconductor nanostructures such as nanowires, nanofins, and porous structures.

Preparations and Characterizations of Luminescent Two Dimensional Organic-inorganic Perovskite Semiconductors

Directory of Open Access Journals (Sweden)

Sanjun Zhang

2010-05-01

Full Text Available This article reviews the synthesis, structural and optical characterizations of some novel luminescent two dimensional organic-inorganic perovskite (2DOIP semiconductors. These 2DOIP semiconductors show a self-assembled nano-layered structure, having the electronic structure of multi-quantum wells. 2DOIP thin layers and nanoparticles have been prepared through different methods. The structures of the 2DOIP semiconductors are characterized by atomic force microscopy and X-ray diffraction. The optical properties of theb DOIP semiconductors are characterized from absorption and photoluminescence spectra measured at room and low temperatures. Influences of different components, in particular the organic parts, on the structural and optical properties of the 2DOIP semiconductors are discussed.

A microprocessor based on a two-dimensional semiconductor

Science.gov (United States)

Wachter, Stefan; Polyushkin, Dmitry K.; Bethge, Ole; Mueller, Thomas

2017-04-01

The advent of microcomputers in the 1970s has dramatically changed our society. Since then, microprocessors have been made almost exclusively from silicon, but the ever-increasing demand for higher integration density and speed, lower power consumption and better integrability with everyday goods has prompted the search for alternatives. Germanium and III-V compound semiconductors are being considered promising candidates for future high-performance processor generations and chips based on thin-film plastic technology or carbon nanotubes could allow for embedding electronic intelligence into arbitrary objects for the Internet-of-Things. Here, we present a 1-bit implementation of a microprocessor using a two-dimensional semiconductor--molybdenum disulfide. The device can execute user-defined programs stored in an external memory, perform logical operations and communicate with its periphery. Our 1-bit design is readily scalable to multi-bit data. The device consists of 115 transistors and constitutes the most complex circuitry so far made from a two-dimensional material.

Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol-gel metal-oxide dielectrics and semiconductors.

Science.gov (United States)

Jo, Jeong-Wan; Kim, Jaekyun; Kim, Kyung-Tae; Kang, Jin-Gu; Kim, Myung-Gil; Kim, Kwang-Ho; Ko, Hyungduk; Kim, Jiwan; Kim, Yong-Hoon; Park, Sung Kyu

2015-02-18

Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

Science.gov (United States)

Dudy, L.; Aulbach, J.; Wagner, T.; Schäfer, J.; Claessen, R.

2017-11-01

Interacting electrons confined to only one spatial dimension display a wide range of unusual many-body quantum phenomena, ranging from Peierls instabilities to the breakdown of the canonical Fermi liquid paradigm to even unusual spin phenomena. The underlying physics is not only of tremendous fundamental interest, but may also have bearing on device functionality in future micro- and nanoelectronics with lateral extensions reaching the atomic limit. Metallic adatoms deposited on semiconductor surfaces may form self-assembled atomic nanowires, thus representing highly interesting and well-controlled solid-state realizations of such 1D quantum systems. Here we review experimental and theoretical investigations on a few selected prototypical nanowire surface systems, specifically Ge(0 0 1)-Au and Si(hhk)-Au, and the search for 1D quantum states in them. We summarize the current state of research and identify open questions and issues.

One-equation modeling and validation of dielectric barrier discharge plasma actuator thrust

International Nuclear Information System (INIS)

Yoon, Jae-San; Han, Jae-Hung

2014-01-01

Dielectric barrier discharge (DBD) plasma actuators with an asymmetric electrode configuration can generate a wall-bounded jet without mechanical moving parts, which require considerable modifications of existing aeronautical objects and which incur high maintenance costs. Despite this potential, one factor preventing the wider application of such actuators is the lack of a reliable actuator model. It is difficult to develop such a model because calculating the ion-electric field and fluid interaction consume a high amount calculation effort during the numerical analysis. Thus, the authors proposed a semi-empirical model which predicted the thrust of plasma actuators with a simple equation. It gave a numeric thrust value, and we implemented the value on a computational fluid dynamics (CFD) solver to describe the two-dimensional flow field induced by the actuator. However, the model had a narrow validation range, depending on the empirical formula, and it did not fully consider environment variables. This study presents an improved model by replacing the empirical formulae in the previous model with physical equations that take into account physical phenomena and environmental variables. During this process, additional operation parameters, such as pressure, temperature and ac waveforms, are newly taken to predict the thrust performance of the actuators with a wider range of existing parameters, the thickness of the dielectric barrier, the exposed electrode, the dielectric constant, the ac frequency and the voltage amplitude. Thrust prediction curves from the model are compared to those of earlier experimental results, showing that the average error is less than 5% for more than one hundred instances of data. As in the earlier work, the predicted thrust value is implemented on a CFD solver, and two-dimensional wall-jet velocity profiles induced by the actuator are compared to the previous experimental results. (paper)

Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

KAUST Repository

Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

2015-01-01

We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

Large three-dimensional photonic crystals based on monocrystalline liquid crystal blue phases.

Science.gov (United States)

Chen, Chun-Wei; Hou, Chien-Tsung; Li, Cheng-Chang; Jau, Hung-Chang; Wang, Chun-Ta; Hong, Ching-Lang; Guo, Duan-Yi; Wang, Cheng-Yu; Chiang, Sheng-Ping; Bunning, Timothy J; Khoo, Iam-Choon; Lin, Tsung-Hsien

2017-09-28

Although there have been intense efforts to fabricate large three-dimensional photonic crystals in order to realize their full potential, the technologies developed so far are still beset with various material processing and cost issues. Conventional top-down fabrications are costly and time-consuming, whereas natural self-assembly and bottom-up fabrications often result in high defect density and limited dimensions. Here we report the fabrication of extraordinarily large monocrystalline photonic crystals by controlling the self-assembly processes which occur in unique phases of liquid crystals that exhibit three-dimensional photonic-crystalline properties called liquid-crystal blue phases. In particular, we have developed a gradient-temperature technique that enables three-dimensional photonic crystals to grow to lateral dimensions of ~1 cm (~30,000 of unit cells) and thickness of ~100 μm (~ 300 unit cells). These giant single crystals exhibit extraordinarily sharp photonic bandgaps with high reflectivity, long-range periodicity in all dimensions and well-defined lattice orientation.Conventional fabrication approaches for large-size three-dimensional photonic crystals are problematic. By properly controlling the self-assembly processes, the authors report the fabrication of monocrystalline blue phase liquid crystals that exhibit three-dimensional photonic-crystalline properties.

Optical studies of metallo-dielectric photonic crystals

Science.gov (United States)

Kamaev, Vladimir

2007-12-01

Metallo-dielectric photonic crystals (MDPCs) are characterized by a large difference between the dielectric constants of the constituents. Owing to their high DC conductivity a broad omnidirectional band gap is formed at low frequencies. At the same time there exist numerous propagating electromagnetic modes at frequencies above a cutoff. This gives a possibility of creating a "transparent" metal: a crystal transparent in the visible spectral range and simultaneously having high DC conductivity. Since the cutoff wavelength linearly scales with the crystal periodicity, in order to make an MDPC with propagating modes in the visible range the crystal periodicity has to be around a quarter micrometer. Fabrication of such a crystal is a challenging task. One of the feasible choices is natural or artificial opals, structures made of silica balls arranged into a close packed fcc lattice. The ball diameters could vary from 200 nm to several microns, allowing the desired optical features to be in the visible spectral range. In the present work we studied metal-infiltrated opals numerically, analytically, and experimentally (Chapters 1 and 4). Both theory and experiment revealed high reflectance of the samples at large wavelengths associated with the low frequency metallic band gap formation, and low reflectance at short wavelengths that has characteristic wiggles. Contrarily, the absorbance is low in the IR region and goes up towards the UV end, which is due to low group velocity of light and high metal absorption in the region. Numerical analysis of thin metal-infiltrated opals (˜3-5 layers) did show a transmission peak around the first reflectance minimum and cutoff frequency. In Chapter 5 we present transmission experiments on thin metal films perforated with periodic arrays of holes or deposited on an opal monolayer. Both types of 2D MDPCs exhibited anomalous transmission peaks associated with surface plasma excitations. It was shown that the phenomenon could be

Femtosecond time-resolved two-photon photoemission study of organic semiconductor copper phthalocyanine film

International Nuclear Information System (INIS)

Tanaka, A.; Tohoku University; University of Rochester, NY; Yan, L.; Watkins, N.J.; Gao, Y.

2004-01-01

Full text: Organic semiconductors are recently attracting much interest from the viewpoints of both device and fundamental physics. These organic semiconductors are considered to be important constituents of the future devices, such as organic light-emitting diode, organic field effect transistor, and organic solid-state injection laser. In order to elucidate their detailed physical properties and to develop the future devices, it is indispensable to understand their excited-state dynamics as well as their electronic structures. The femtosecond time-resolved two-photon photoemission (TR-2PPE) spectroscopy is attracting much interest because of its capability to observe the energy-resolved excited electron dynamics. In this work, we have carried out a TR-2PPE study of the organic semiconductor copper phthalocyanine (CuPc) film. Furthermore, we have investigated the detailed electronic structure of CuPc film using the photoemission (PES) and inverse photoemission (IPES) spectroscopies. From the simultaneous PES and IPES measurements for CuPc film with a thickness of 100 nm, the lowest unoccupied molecular orbital (LUMO), highest occupied molecular orbital, and ionization potential of CuPc film have been directly determined. The observed two-photon photoemission (2PPE) spectrum of the present CuPc film, measured with photon energy of about hv=3.3 eV, exhibits a broad feature. From the energy diagram of CuPc film determined by the PES and IPES measurements, the intermediate state observed in the present 2PPE spectrum of CuPc film corresponds to the energy region between about 0.4 and 1.7 eV above the LUMO energy. From the time-resolved pump-probe measurements, it is found that the relaxation lifetimes of excited states in the present CuPc films are very short (all below 50 fs) and monotonously become faster with increasing excitation energy. We attribute this extremely fast relaxation process of photoexcitation to a rapid internal conversion process. From these results

Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

Science.gov (United States)

Lau, Wayne Heung

This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

Dielectric-loaded surface plasmon-polariton nanowaveguides fabricated by two-photon polymerization

Energy Technology Data Exchange (ETDEWEB)

Luo, Hao; Li, Yan; Cui, Hai-Bo; Yang, Hong; Gong, Qi-Huang [Peking University, State Key Laboratory for Mesoscopic Physics and Department of Physics, Beijing (China)

2009-11-15

The design, fabrication, and characterization of dielectric-loaded surface plasmon-polariton nanowave-guides on a gold film are presented. The nanostructures are produced by two-photon polymerization with femtosecond laser pulses, and the minimum ridge height is {proportional_to}170 nm. Leakage radiation microscopy shows that these surface plasmon-polariton waveguides are single mode with strong mode confinement at the wavelength of 830 nm. The experimental results are in good agreement with the simulation by the effective-index method. (orig.)

Photonic design for efficient solid state energy conversion

Science.gov (United States)

Agrawal, Mukul

The efficiency of conversion between electrical and photonic energy in optoelectronic devices such as light-emitting diodes, photodetectors and solar cells is strongly affected by the photonic modes supported by the device structure. In this thesis, we show how tuning of the local photon density of states in subwavelength structures can be used to optimize device performance. The first part of the thesis is focused on organic light emitting diodes (OLEDs), a candidate technology for next-generation displays and solid-state lighting. An important unsolved problem in OLEDs is to ensure that a significant fraction of photons emitted by the organic emissive layer couple out of the device structure instead of remaining trapped in the device. It is shown using modeling and experiments that optimized non-periodic dielectric multilayer stacks can significantly increase the photon outcoupling while maintaining display quality brightness uniformity over the viewing cone. In the second part, we discuss the theoretical limits to broadband light harvesting in photovoltaic cells. First, it is shown that the extent to which one-dimensional optical cavities can be used to enhance light absorption over a broad spectral range is limited by the requirement that the cavity mirrors have a causal response. This result is used as a guide to design practical dielectric structures that enhance light harvesting in planar thin-film organic solar cells. Finally, we consider the enhancement of optical absorption in two- and three-dimensional structures in which incident light is scattered into quasi-trapped modes for more effective utilization of solar radiation. It is shown that there is an upper bound to the degree to which optical absorption can be enhanced that is identical to the limit found in the geometric optics regime. Rigorous optical simulations are used to show that an optical structure consisting of a two-dimensional array of inverted pyramids comes close to this limit. Before

One-dimensional hypersonic phononic crystals.

Science.gov (United States)

Gomopoulos, N; Maschke, D; Koh, C Y; Thomas, E L; Tremel, W; Butt, H-J; Fytas, G

2010-03-10

We report experimental observation of a normal incidence phononic band gap in one-dimensional periodic (SiO(2)/poly(methyl methacrylate)) multilayer film at gigahertz frequencies using Brillouin spectroscopy. The band gap to midgap ratio of 0.30 occurs for elastic wave propagation along the periodicity direction, whereas for inplane propagation the system displays an effective medium behavior. The phononic properties are well captured by numerical simulations. The porosity in the silica layers presents a structural scaffold for the introduction of secondary active media for potential coupling between phonons and other excitations, such as photons and electrons.

Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

Science.gov (United States)

Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

2013-10-18

Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

International Nuclear Information System (INIS)

McPheeters, Claiborne O; Yu, Edward T; Hu, Dongzhi; Schaadt, Daniel M

2012-01-01

Sub-wavelength photonic structures and nanoscale materials have the potential to greatly improve the efficiencies of solar cells by enabling maximum absorption of sunlight. Semiconductor heterostructures provide versatile opportunities for improving absorption of infrared radiation in photovoltaic devices, which accounts for half of the power in the solar spectrum. These ideas can be combined in quantum-well solar cells and related structures in which sub-wavelength metal and dielectric scattering elements are integrated for light trapping. Measurements and simulations of GaAs solar cells with less than one micron of active material demonstrate the benefits of incorporating In(Ga)As quantum-wells and quantum-dots to improve their performance. Simulations that incorporate a realistic model of absorption in quantum-wells show that the use of broadband photonic structures with such devices can substantially improve the benefit of incorporating heterostructures, enabling meaningful improvements in their performance

Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

DEFF Research Database (Denmark)

Xiao, Sanshui; Qiu, M.

2007-01-01

Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor is gr...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing.......Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...

Inelastic light scattering by low-lying excitations of electrons in low-dimensional semiconductors

Energy Technology Data Exchange (ETDEWEB)

Pellegrini, V. [NEST CNR-INFM and Scuola Normale Superiore, Pisa (Italy); Pinczuk, A. [Department of Physics, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States); Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey (United States)

2006-11-15

The low-dimensional electron systems that reside in artificial semiconductor heterostructures of great perfection are a contemporary materials base for explorations of collective phenomena. Studies of low-lying elementary excitations by inelastic light scattering offer insights on properties such energetics, interactions and spin magnetization. We review here recent light scattering results obtained from two-dimensional (2D) quantum fluids in semiconductor heterostructures under extreme conditions of low temperature and large magnetic field, where the quantum Hall phases are archetypes of novel behaviors. We also consider recent light scattering experiments that have probed the excitation spectra of few-electron states in semiconductor quantum dots. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

KAUST Repository

Wu, Xue-Jun; Chen, Junze; Tan, Chaoliang; Zhu, Yihan; Han, Yu; Zhang, Hua

2016-01-01

. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective

The role of phonon scattering in the indistinguishability of photons emitted from semiconductor cavity QED systems

DEFF Research Database (Denmark)

Nielsen, Per Kær; Gregersen, Niels; Mørk, Jesper

2013-01-01

A solid-state single-photon source emitting indistinguishable photons on-demand is an essential component of linear optics quantum computing schemes. However, the emitter will inevitably interact with the solid-state environment causing decoherence and loss of indistinguishability. In this paper......, we present a comprehensive theoretical treatment of the influence of phonon scattering on the coherence properties of single photons emitted from semiconductor quantum dots. We model decoherence using a full microscopic theory and compare with standard Markovian approximations employing Lindblad...

Preparation, one- and two-photon properties of carbazole derivatives containing nitrogen heterocyclic ring

Science.gov (United States)

Zhang, Yichi; Wang, Ping; Li, Liang; Chen, Zhimin; He, Chunying; Wu, Yiqun

Preparation of recording materials with high two-photon absorption activities is one of the important issues to superhigh- density two-photon absorption (TPA) three-dimensional (3D) optical data storage. In this paper, three new carbazole derivatives containing nitrogen heterocyclic ring with symmetric and asymmetric structures are prepared using ethylene as the π bridge between the carbazole unit and nitrogen heterocyclic ring, namely, 9-butyl-3-(2-(1,8- naphthyridin)vinyl)-carbazole (material 1), 9-butyl-3,6-bis(2-(1,8-naphthyl)vinyl)-carbazole (material 2) and 9-butyl-3,6- bis(2-(quinolin)vinyl)-carbazole (material 3). Their one photon properties including linear absorption spectra, fluorescence emission spectra, and fluorescence quantum yields are studied. The fluorescence excited by 120 fs pulse at 800 nm Ti: sapphire laser operating at 1 kHz repetition rate with different incident powers of 9-butyl-3-(2-(quinolin) vinyl)-carbazole (material 3) was investigated, and two-photon absorption cross-sections has been obtained. It is shown that material 3 containing quinoline rings as electron acceptor with symmetric structure exhibit high two-photon absorption activity. The result implies that material 3 (9-butyl-3-(2-(quinolin) vinyl)-carbazole) is a good candidate as a promising recording material for super-high-density two-photon absorption (TPA) three-dimensional (3D) optical data storage. The influence of chemical structure of the materials on the optical properties is discussed.

Dielectric spectroscopy for non-invasive monitoring of epithelial cell differentiation within three-dimensional scaffolds

International Nuclear Information System (INIS)

Daoud, Jamal; Tabrizian, Maryam; Asami, Koji; Rosenberg, Lawrence

2012-01-01

In this study, we introduce a cellular differentiation cellular model based on dielectric spectroscopy that characterizes epithelial differentiation processes. Non-invasive cellular monitoring was achieved within a three-dimensional microenvironment consisting of a cell-containing collagen I gel seeded onto microfabricated scaffolds. In this proof-of-concept investigation, Madin–Darby canine kidney cells were cultured within microfabricated, geometrically controlled scaffolds and allowed us to differentiate to hollow cyst-like structures. This transformation within the three-dimensional environment is monitored and characterized through dielectric spectroscopy while maintaining cell culture in vitro. (paper)

Photonic Hypercrystals

Directory of Open Access Journals (Sweden)

Evgenii E. Narimanov

2014-10-01

Full Text Available We introduce a new “universality class” of artificial optical media—photonic hypercrystals. These hyperbolic metamaterials, with periodic spatial variation of dielectric permittivity on subwavelength scale, combine the features of optical metamaterials and photonic crystals. In particular, surface waves supported by a hypercrystal possess the properties of both the optical Tamm states in photonic crystals and surface-plasmon polaritons at the metal-dielectric interface.

Organic semiconductor growth and morphology considerations for organic thin-film transistors.

Science.gov (United States)

Virkar, Ajay A; Mannsfeld, Stefan; Bao, Zhenan; Stingelin, Natalie

2010-09-08

Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.

Phonon-assisted two-photon exciton transitions in semiconductors

International Nuclear Information System (INIS)

Hassan, A.R.

1987-08-01

The theory of phonon-assisted two-photon transitions to excitonic states in semiconductors has been theoretically investigated. The effects of both the nonparabolicity of the band and the degeneracy of the valence band have been taken into account. Expressions for the absorption coefficient through different band models are calculated. The numerical applications to CdI 2 and GaP show that the 4-band model gives the dominant contribution which leads to a final s-exciton state. An exciton peak appears at an energy which is close to that recently observed in CdI 2 . The non-parabolic effect enhances the absorption coefficient by a two-order of magnitude. (author). 6 refs, 1 fig., 1 tab

Semiconductor-to-metallic flipping in a ZnFe{sub 2}O{sub 4}–graphene based smart nano-system: Temperature/microwave magneto-dielectric spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ameer, Shahid, E-mail: shahidameer@scme.nust.edu.pk [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan); Gul, Iftikhar Hussain [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan); Mahmood, Nasir [Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Mujahid, Muhammad [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan)

2015-01-15

Zn-(FeO{sub 2}){sub 2}–graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis with different percentages of graphene. The structure of the nanocomposite was confirmed through X-ray diffraction, micro-Raman scattering spectroscopy, Ultraviolet–Visible spectroscopy, and Fourier transform infrared spectroscopy. The structural growth and morphological aspects were analyzed using scanning/transmission electron microscopy, revealing marvelous micro-structural features of the assembled nano-system resembling a maple leaf. To determine the composition, energy dispersive spectroscopy and X-ray photoelectron spectroscopy were used. Microwave magneto-dielectric spectroscopy revealed the improved dielectric properties of the nano-composite compared to those of the parent functional nanocrystals. Temperature gradient dielectric spectroscopy was used over the spectral range from 100 Hz to 5 MHz to reveal the phenomenological effect that the nanosystem flips from its usual semiconductor nature to a metallic nature with sensing temperature. Electrical conductivity and dielectric analysis indicated that the dielectric loss and the dielectric permittivity increased at room temperature. This extraordinary switching capability of the functionalized graphene nanosystem opens up a new dimension for engineering advanced and efficient smart composite materials. - Graphical abstract: Display Omitted - Highlights: • Zn-(FeO{sub 2}){sub 2}–graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis. • The synthesized nano-system exhibits marvelous leaf like microstructure. • These nano-composites show improved magneto dielectric response. • This engineered smart nano-system shows phenomenological flipping from semiconductor like nature to metallic behavior.

Trapped Atoms in One-Dimensional Photonic Crystals

Science.gov (United States)

2013-08-09

2002 J. Opt. Soc. Am. B 19 2052 [39] Koenderink A F, Kafesaki M, Soukoulis C M and Sandoghdar V 2006 J. Opt. Soc. Am. B 23 1196 [40] Manga Rao V S C...032509 [55] Hwang J K, Ryu H Y and Lee Y H 1999 Phys. Rev. B 60 4688–95 [56] Yao P, Manga Rao V S C and Hughes S 2010 Laser Photon. Rev. 4 499–516 New Journal of Physics 15 (2013) 083026 (http://www.njp.org/)

Ultra-wide tuning single channel filter based on one-dimensional photonic crystal with an air cavity

Science.gov (United States)

Zhao, Xiaodan; Yang, Yibiao; Chen, Zhihui; Wang, Yuncai; Fei, Hongming; Deng, Xiao

2017-02-01

By inserting an air cavity into a one-dimensional photonic crystal of LiF/GaSb, a tunable filter covering the whole visible range is proposed. Following consideration of the dispersion of the materials, through modulating the thickness of the air cavity, we demonstrate that a single resonant peak can shift from 416.1 to 667.3 nm in the band gap at normal incidence by means of the transfer matrix method. The research also shows that the transmittance of the channel can be maximized when the number of periodic LiF/GaSb layers on one side of the air defect layer is equal to that of the other side. When adding a period to both sides respectively, the full width at half maximum of the defect mode is reduced by one order of magnitude. This structure will provide a promising approach to fabricate practical tunable filters in the visible region with ultra-wide tuning range. Project supported by the National Natural Science Foundation of China (Nos. 61575138, 61307069, 51205273), and the Top Young Academic Leaders and the Outstanding Innovative Teams of Higher Learning Institutions of Shanxi.

Three-dimensional passive sensing photon counting for object classification

Science.gov (United States)

Yeom, Seokwon; Javidi, Bahram; Watson, Edward

2007-04-01

In this keynote address, we address three-dimensional (3D) distortion-tolerant object recognition using photon-counting integral imaging (II). A photon-counting linear discriminant analysis (LDA) is discussed for classification of photon-limited images. We develop a compact distortion-tolerant recognition system based on the multiple-perspective imaging of II. Experimental and simulation results have shown that a low level of photons is sufficient to classify out-of-plane rotated objects.

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Science.gov (United States)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Correlation of Photocatalytic Activity with Band Structure of Low-dimensional Semiconductor Nanostructures

Science.gov (United States)

Meng, Fanke

Photocatalytic hydrogen generation by water splitting is a promising technique to produce clean and renewable solar fuel. The development of effective semiconductor photocatalysts to obtain efficient photocatalytic activity is the key objective. However, two critical reasons prevent wide applications of semiconductor photocatalysts: low light usage efficiency and high rates of charge recombination. In this dissertation, several low-dimensional semiconductors were synthesized with hydrothermal, hydrolysis, and chemical impregnation methods. The band structures of the low-dimensional semiconductor materials were engineered to overcome the above mentioned two shortcomings. In addition, the correlation between the photocatalytic activity of the low-dimensional semiconductor materials and their band structures were studied. First, we studied the effect of oxygen vacancies on the photocatalytic activity of one-dimensional anatase TiO2 nanobelts. Given that the oxygen vacancy plays a significant role in band structure and photocatalytic performance of semiconductors, oxygen vacancies were introduced into the anatase TiO2 nanobelts during reduction in H2 at high temperature. The oxygen vacancies of the TiO2 nanobelts boosted visible-light-responsive photocatalytic activity but weakened ultraviolet-light-responsive photocatalytic activity. As oxygen vacancies are commonly introduced by dopants, these results give insight into why doping is not always beneficial to the overall photocatalytic performance despite increases in absorption. Second, we improved the photocatalytic performance of two-dimensional lanthanum titanate (La2Ti2 O7) nanosheets, which are widely studied as an efficient photocatalyst due to the unique layered crystal structure. Nitrogen was doped into the La2Ti2O7 nanosheets and then Pt nanoparticles were loaded onto the La2Ti2O7 nanosheets. Doping nitrogen narrowed the band gap of the La2Ti 2O7 nanosheets by introducing a continuum of states by the valence

Multi-dimensional photonic states from a quantum dot

Science.gov (United States)

Lee, J. P.; Bennett, A. J.; Stevenson, R. M.; Ellis, D. J. P.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

2018-04-01

Quantum states superposed across multiple particles or degrees of freedom offer an advantage in the development of quantum technologies. Creating these states deterministically and with high efficiency is an ongoing challenge. A promising approach is the repeated excitation of multi-level quantum emitters, which have been shown to naturally generate light with quantum statistics. Here we describe how to create one class of higher dimensional quantum state, a so called W-state, which is superposed across multiple time bins. We do this by repeated Raman scattering of photons from a charged quantum dot in a pillar microcavity. We show this method can be scaled to larger dimensions with no reduction in coherence or single-photon character. We explain how to extend this work to enable the deterministic creation of arbitrary time-bin encoded qudits.

CMOS-compatible photonic devices for single-photon generation

Directory of Open Access Journals (Sweden)

Xiong Chunle

2016-09-01

Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

Science.gov (United States)

Tongay, Sefaattin; Suh, Joonki; Ataca, Can; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu, Jonathan; Ko, Changhyun; Raghunathanan, Rajamani; Zhou, Jian; Ogletree, Frank; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao

2013-01-01

Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering. PMID:24029823

On-demand semiconductor source of 780-nm single photons with controlled temporal wave packets

Science.gov (United States)

Béguin, Lucas; Jahn, Jan-Philipp; Wolters, Janik; Reindl, Marcus; Huo, Yongheng; Trotta, Rinaldo; Rastelli, Armando; Ding, Fei; Schmidt, Oliver G.; Treutlein, Philipp; Warburton, Richard J.

2018-05-01

We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at 780 nm are generated on demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multiphoton emission probability [g2(0 ) ˜0.10 -0.15 ] at a generation rate up to 10 MHz. We observe Raman photons with linewidths as low as 200 MHz, which is narrow compared to the 1.1-GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.

A study on new types of metallic photonic crystals

International Nuclear Information System (INIS)

Ahmed, M.I.

2013-01-01

In this thesis, I tried to synthesize a one dimension dielectric photonic crystal. I have succeeded in depositing single layers of zinc oxide and magnesium oxide on glass substrates. Each single layer was characterized by a scanning electron microscope, X-ray diffraction, A Mirue interferometer, and a spectrophotometer. The refractive indices, extinction coefficients, and absorption coefficients of each single layer were calculated from the measured transmittance, reflectance, and thickness data. Using the calculated parameters (refractive indices) and measured parameters (thicknesses) the transmission spectrum of the one dimension photonic crystal composed of zinc oxide and magnesium oxide was modelled. Using the transfer matrix method, a comparative study of the one dimension-dielectric and metallic photonic crystals was done. Effect of the refractive index difference, filling factor, number of periods, Plasmon frequency, damping coefficient, and incidence angle on the transmittance of the dielectric and metallic photonic crystal was carried out. A multilayered structure composed of Silver and Gallium Nitride was designed to transmit in the visible region, block UV frequencies, and reflect the IR and microwave frequencies. Using a combination of MaxwellGarnett Approximation and the transfer matrix method; the properties of a nanocomposite photonic crystal consisting of Cryolite and spherical nanoparticles of silver distributed in a dielectric matrix of titanium dioxide was studied. Effect of the nanoparticle concentration, lattice constant and incidence angle on the polaritonic and structure photonic band gap were studied.

Effect of titanium oxide-polystyrene nanocomposite dielectrics on morphology and thin film transistor performance for organic and polymeric semiconductors

Energy Technology Data Exchange (ETDEWEB)

Della Pelle, Andrea M. [LGS Innovations, 15 Vreeland Rd., Florham Park, NJ 07932 (United States); Department of Chemistry, University of Massachusetts Amherst, 710 N. Pleasant St. Amherst, MA 01003 (United States); Maliakal, Ashok, E-mail: maliakal@lgsinnovations.com [LGS Innovations, 15 Vreeland Rd., Florham Park, NJ 07932 (United States); Sidorenko, Alexander [Department of Chemistry and Biochemistry, University of the Sciences, 600 South 43rd St., Philadelphia, PA 191034 (United States); Thayumanavan, S. [Department of Chemistry, University of Massachusetts Amherst, 710 N. Pleasant St. Amherst, MA 01003 (United States)

2012-07-31

Previous studies have shown that organic thin film transistors with pentacene deposited on gate dielectrics composed of a blend of high K titanium oxide-polystyrene core-shell nanocomposite (TiO{sub 2}-PS) with polystyrene (PS) perform with an order of magnitude increase in saturation mobility for TiO{sub 2}-PS (K = 8) as compared to PS devices (K = 2.5). The current study finds that this performance enhancement can be translated to alternative small single crystal organics such as {alpha}-sexithiophene ({alpha}-6T) (enhancement factor for field effect mobility ranging from 30-100 Multiplication-Sign higher on TiO{sub 2}-PS/PS blended dielectrics as compared to homogenous PS dielectrics). Interestingly however, in the case of semicrystalline polymers such as (poly-3-hexylthiophene) P3HT, this dramatic enhancement is not observed, possibly due to the difference in processing conditions used to fabricate these devices (film transfer as opposed to thermal evaporation). The morphology for {alpha}-sexithiophene ({alpha}-6T) grown by thermal evaporation on TiO{sub 2}-PS/PS blended dielectrics parallels that observed in pentacene devices. Smaller grain size is observed for films grown on dielectrics with higher TiO{sub 2}-PS content. In the case of poly(3-hexylthiophene) (P3HT) devices, constructed via film transfer, morphological differences exist for the P3HT on different substrates, as discerned by atomic force microscopy studies. However, these devices only exhibit a modest (2 Multiplication-Sign ) increase in mobility with increasing TiO{sub 2}-PS content in the films. After annealing of the transferred P3HT thin film transistor (TFT) devices, no appreciable enhancement in mobility is observed across the different blended dielectrics. Overall the results support the hypothesis that nucleation rate is responsible for changes in film morphology and device performance in thermally evaporated small molecule crystalline organic semiconductor TFTs. The increased nucleation

Effect of titanium oxide–polystyrene nanocomposite dielectrics on morphology and thin film transistor performance for organic and polymeric semiconductors

International Nuclear Information System (INIS)

Della Pelle, Andrea M.; Maliakal, Ashok; Sidorenko, Alexander; Thayumanavan, S.

2012-01-01

Previous studies have shown that organic thin film transistors with pentacene deposited on gate dielectrics composed of a blend of high K titanium oxide–polystyrene core–shell nanocomposite (TiO 2 –PS) with polystyrene (PS) perform with an order of magnitude increase in saturation mobility for TiO 2 –PS (K = 8) as compared to PS devices (K = 2.5). The current study finds that this performance enhancement can be translated to alternative small single crystal organics such as α-sexithiophene (α-6T) (enhancement factor for field effect mobility ranging from 30-100× higher on TiO 2 –PS/PS blended dielectrics as compared to homogenous PS dielectrics). Interestingly however, in the case of semicrystalline polymers such as (poly-3-hexylthiophene) P3HT, this dramatic enhancement is not observed, possibly due to the difference in processing conditions used to fabricate these devices (film transfer as opposed to thermal evaporation). The morphology for α-sexithiophene (α-6T) grown by thermal evaporation on TiO 2 –PS/PS blended dielectrics parallels that observed in pentacene devices. Smaller grain size is observed for films grown on dielectrics with higher TiO 2 –PS content. In the case of poly(3-hexylthiophene) (P3HT) devices, constructed via film transfer, morphological differences exist for the P3HT on different substrates, as discerned by atomic force microscopy studies. However, these devices only exhibit a modest (2×) increase in mobility with increasing TiO 2 –PS content in the films. After annealing of the transferred P3HT thin film transistor (TFT) devices, no appreciable enhancement in mobility is observed across the different blended dielectrics. Overall the results support the hypothesis that nucleation rate is responsible for changes in film morphology and device performance in thermally evaporated small molecule crystalline organic semiconductor TFTs. The increased nucleation rate produces organic polycrystalline films with small grain

Light transport and lasing in complex photonic structures

Science.gov (United States)

Liew, Seng Fatt

Complex photonic structures refer to composite optical materials with dielectric constant varying on length scales comparable to optical wavelengths. Light propagation in such heterogeneous composites is greatly different from homogeneous media due to scattering of light in all directions. Interference of these scattered light waves gives rise to many fascinating phenomena and it has been a fast growing research area, both for its fundamental physics and for its practical applications. In this thesis, we have investigated the optical properties of photonic structures with different degree of order, ranging from periodic to random. The first part of this thesis consists of numerical studies of the photonic band gap (PBG) effect in structures from 1D to 3D. From these studies, we have observed that PBG effect in a 1D photonic crystal is robust against uncorrelated disorder due to preservation of long-range positional order. However, in higher dimensions, the short-range positional order alone is sufficient to form PBGs in 2D and 3D photonic amorphous structures (PASS). We have identified several parameters including dielectric filling fraction and degree of order that can be tuned to create a broad isotropic PBG. The largest PBG is produced by the dielectric networks due to local uniformity in their dielectric constant distribution. In addition, we also show that deterministic aperiodic structures (DASs) such as the golden-angle spiral and topological defect structures can support a wide PBG and their optical resonances contain unexpected features compared to those in photonic crystals. Another growing research field based on complex photonic structures is the study of structural color in animals and plants. Previous studies have shown that non-iridescent color can be generated from PASs via single or double scatterings. For better understanding of the coloration mechanisms, we have measured the wavelength-dependent scattering length from the biomimetic samples. Our

Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks

OpenAIRE

Shabani, J.; Kjaergaard, M.; Suominen, H. J.; Kim, Younghyun; Nichele, F.; Pakrouski, K.; Stankevic, T.; Lutchyn, R. M.; Krogstrup, P.; Feidenhans'l, R.; Kraemer, S.; Nayak, C.; Troyer, M.; Marcus, C. M.; Palmstrøm, C. J.

2015-01-01

Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the interface between a one-dimensional (1D) semiconductor (Sm) with strong SOC and a superconductor (S) hosts Majorana modes with nontrivial topological properties [5-8]. Recently, epitaxial growth of Al on InAs nanowires was shown to yield a high quality S-Sm system ...

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

International Nuclear Information System (INIS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-01-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

International Nuclear Information System (INIS)

Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

2015-01-01

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

Bi-substituted iron garnet films for one-dimensional magneto-photonic crystals: Synthesis and properties

International Nuclear Information System (INIS)

Shaposhnikov, A.N.; Karavainikov, A.V.; Prokopov, A.R.; Berzhansky, V.N.; Salyuk, O.Y.

2012-01-01

Graphical abstract: Faraday hysteresis loops for Bi 1.0 Y 0.5 Gd 1.5 Fe 4.2 Al 0.8 O 12 film on glass-ceramic substrate (a), Bi 2.8 Y 0.2 Fe 5 O 12 film on gallium–gadolinium garnet (b) and for glass-ceramic/SiO 2 /Bi 1.0 Y 0.5 Gd 1.5 Fe 4.2 Al 0.8 O 12 /Bi 2.8 Y 0.2 Fe 5 O 12 structure (c). Highlights: ► Bismuth-substituted iron garnet films as magneto-optical layers in magneto-photonic crystals. ► It is impossible to crystallize the films with high Bi content on amorphous substrates. ► The crystallization of the films can be achieved by their deposition on buffer layer with low bismuth content. -- Abstract: The crystallization processes in Bi 2.8 Y 0.2 Fe 5 O 12 , Bi 2.5 Gd 0.5 Fe 3.8 Al 1.2 O 12 , Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 and Bi 1.0 Y 0.5 Gd 1.5 Fe 4.2 Al 0.8 O 12 garnet films deposited by reactive ion beam sputtering on (1 1 1) gadolinium–gallium garnet substrates, optical glass-ceramic and SiO 2 films have been studied. Films were annealed at low pressure in oxygen atmosphere and in the air. The possibility of preparation of crystalline garnet films with high concentration of bismuth on the SiO 2 films using a buffer layer with low concentration of Bi has been shown. This allows to produce one-dimensional magneto-photonic crystals with high effective Faraday rotation (several tens of°/μm for the visible optical spectrum).

Quantum theory of the optical and electronic properties of semiconductors

CERN Document Server

Haug, Hartmut

2009-01-01

This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

Collective excitations in semiconductor superlattices and plasma modes of a two-dimensional electron gas with spatially modulated charge density

International Nuclear Information System (INIS)

Eliasson, G.L.

1987-01-01

The theory of collective excitations in semiconductor superlattices is formulated by using linear response theory. Different kinds of collective excitations in type I (GaAs-GaAlAs) and type II (GaSb-InAs) superlattices are surveyed. Special attention is paid to the presence of surface and finite-size effects. In calculating the dielectric matrix, the effect of different approximations of the system is discussed. The theory for inelastic length scattering (Raman scattering), and for Electron Energy Loss (EEL) due to collective excitations, is formulated. Calculations for several model systems are presented and the main features of the spectra are discussed. In part II the theory of collective excitations of a two-dimensional electron gas with a spatially periodic equilibrium density is formulated. As a first example a periodic array of two-dimensional electron gas strips with constant equilibrium density is studied. The integral equation that describes the charge fluctuations on the strips is derived and solved numerically. The spatial dependence of the density fluctuation across a single strip can be in the form of either propagating or evanescent waves

Slow and fast light effects in semiconductor optical amplifiers for applications in microwave photonics

DEFF Research Database (Denmark)

Xue, Weiqi

This thesis analyzes semiconductor optical amplifiers based slow and fast light effects with particular focus on the applications in microwave photonics. We conceive novel ideas and demonstrate a great enhancement of light slow down. Furthermore, by cascading several slow light stages, >360 degree...... microwave phase shifts over a bandwidth of several tens of gigahertz are achieved. These also satisfy the basic requirements of microwave photonic systems. As an application demonstration, a tunable microwave notch filter is realized, where slow light based phase shifters provide 100% fractional tuning over...

Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

KAUST Repository

Ghoneim, Mohamed T.

2015-06-01

We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

Geometric phase from dielectric matrix

International Nuclear Information System (INIS)

Banerjee, D.

2005-10-01

The dielectric property of the anisotropic optical medium is found by considering the polarized photon as two component spinor of spherical harmonics. The Geometric Phase of a polarized photon has been evaluated in two ways: the phase two-form of the dielectric matrix through a twist and the Pancharatnam phase (GP) by changing the angular momentum of the incident polarized photon over a closed triangular path on the extended Poincare sphere. The helicity in connection with the spin angular momentum of the chiral photon plays the key role in developing these phase holonomies. (author)

Multiple resonant absorber with prism-incorporated graphene and one-dimensional photonic crystals in the visible and near-infrared spectral range

Science.gov (United States)

Zou, X. J.; Zheng, G. G.; Chen, Y. Y.; Xu, L. H.; Lai, M.

2018-04-01

A multi-band absorber constructed from prism-incorporated one-dimensional photonic crystal (1D-PhC) containing graphene defects is achieved theoretically in the visible and near-infrared (vis-NIR) spectral range. By means of the transfer matrix method (TMM), the effect of structural parameters on the optical response of the structure has been investigated. It is possible to achieve multi-peak and complete optical absorption. The simulations reveal that the light intensity is enhanced at the graphene plane, and the resonant wavelength and the absorption intensity can also be tuned by tilting the incidence angle of the impinging light. In particular, multiple graphene sheets are embedded in the arrays, without any demand of manufacture process to cut them into periodic patterns. The proposed concept can be extended to other two-dimensional (2D) materials and engineered for promising applications, including selective or multiplex filters, multiple channel sensors, and photodetectors.

Compound semiconductor device physics

CERN Document Server

Tiwari, Sandip

2013-01-01

This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

Science.gov (United States)

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

2017-08-01

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

Two-Dimensional Photonic Crystals for Sensitive Microscale Chemical and Biochemical Sensing

Science.gov (United States)

Miller, Benjamin L.

2015-01-01

Photonic crystals – optical devices able to respond to changes in the refractive index of a small volume of space – are an emerging class of label-free chemical-and bio-sensors. This review focuses on one class of photonic crystal, in which light is confined to a patterned planar material layer of sub-wavelength thickness. These devices are small (on the order of tens to 100s of microns square), suitable for incorporation into lab-on-a-chip systems, and in theory can provide exceptional sensitivity. We introduce the defining characteristics and basic operation of two-dimensional photonic crystal sensors, describe variations of their basic design geometry, and summarize reported detection results from chemical and biological sensing experiments. PMID:25563402

Active Photonic Crystal Waveguides

DEFF Research Database (Denmark)

Ek, Sara

This thesis deals with the fabrication and characterization of active photonic crystal waveguides, realized in III-V semiconductor material with embedded active layers. The platform offering active photonic crystal waveguides has many potential applications. One of these is a compact photonic...... due to photonic crystal dispersion. The observations are explained by the enhancement of net gain by light slow down. Another application based on active photonic crystal waveguides is micro lasers. Measurements on quantum dot micro laser cavities with different mirror configurations and photonic...

Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

International Nuclear Information System (INIS)

Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

2015-01-01

A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

International Nuclear Information System (INIS)

Wen Feng; Liu Deming; Huang Lirong

2010-01-01

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Wen Feng; Liu Deming; Huang Lirong, E-mail: hlr5649@163.co [Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2010-10-15

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Topologically protected states in one-dimensional systems

CERN Document Server

Fefferman, C L; Weinstein, M I

2017-01-01

The authors study a class of periodic Schrödinger operators, which in distinguished cases can be proved to have linear band-crossings or "Dirac points". They then show that the introduction of an "edge", via adiabatic modulation of these periodic potentials by a domain wall, results in the bifurcation of spatially localized "edge states". These bound states are associated with the topologically protected zero-energy mode of an asymptotic one-dimensional Dirac operator. The authors' model captures many aspects of the phenomenon of topologically protected edge states for two-dimensional bulk structures such as the honeycomb structure of graphene. The states the authors construct can be realized as highly robust TM-electromagnetic modes for a class of photonic waveguides with a phase-defect.

Three-dimensional hot electron photovoltaic device with vertically aligned TiO2 nanotubes.

Science.gov (United States)

Goddeti, Kalyan C; Lee, Changhwan; Lee, Young Keun; Park, Jeong Young

2018-05-09

Titanium dioxide (TiO 2 ) nanotubes with vertically aligned array structures show substantial advantages in solar cells as an electron transport material that offers a large surface area where charges travel linearly along the nanotubes. Integrating this one-dimensional semiconductor material with plasmonic metals to create a three-dimensional plasmonic nanodiode can influence solar energy conversion by utilizing the generated hot electrons. Here, we devised plasmonic Au/TiO 2 and Ag/TiO 2 nanodiode architectures composed of TiO 2 nanotube arrays for enhanced photon absorption, and for the subsequent generation and capture of hot carriers. The photocurrents and incident photon to current conversion efficiencies (IPCE) were obtained as a function of photon energy for hot electron detection. We observed enhanced photocurrents and IPCE using the Ag/TiO 2 nanodiode. The strong plasmonic peaks of the Au and Ag from the IPCE clearly indicate an enhancement of the hot electron flux resulting from the presence of surface plasmons. The calculated electric fields and the corresponding absorbances of the nanodiode using finite-difference time-domain simulation methods are also in good agreement with the experimental results. These results show a unique strategy of combining a hot electron photovoltaic device with a three-dimensional architecture, which has the clear advantages of maximizing light absorption and a metal-semiconductor interface area.

Photonic Structure-Integrated Two-Dimensional Material Optoelectronics

Directory of Open Access Journals (Sweden)

Tianjiao Wang

2016-12-01

Full Text Available The rapid development and unique properties of two-dimensional (2D materials, such as graphene, phosphorene and transition metal dichalcogenides enable them to become intriguing candidates for future optoelectronic applications. To maximize the potential of 2D material-based optoelectronics, various photonic structures are integrated to form photonic structure/2D material hybrid systems so that the device performance can be manipulated in controllable ways. Here, we first introduce the photocurrent-generation mechanisms of 2D material-based optoelectronics and their performance. We then offer an overview and evaluation of the state-of-the-art of hybrid systems, where 2D material optoelectronics are integrated with photonic structures, especially plasmonic nanostructures, photonic waveguides and crystals. By combining with those photonic structures, the performance of 2D material optoelectronics can be further enhanced, and on the other side, a high-performance modulator can be achieved by electrostatically tuning 2D materials. Finally, 2D material-based photodetector can also become an efficient probe to learn the light-matter interactions of photonic structures. Those hybrid systems combine the advantages of 2D materials and photonic structures, providing further capacity for high-performance optoelectronics.

N-dimensional integrability from two-photon coalgebra symmetry

International Nuclear Information System (INIS)

Ballesteros, Angel; Blasco, Alfonso; Herranz, Francisco J

2009-01-01

A wide class of Hamiltonian systems with N degrees of freedom and endowed with, at least, (N - 2) functionally independent integrals of motion in involution is constructed by making use of the two-photon Lie-Poisson coalgebra (h 6 , Δ). The set of (N - 2) constants of the motion is shown to be a universal one for all these Hamiltonians, irrespective of the dependence of the latter on several arbitrary functions and N free parameters. Within this large class of quasi-integrable N-dimensional Hamiltonians, new families of completely integrable systems are identified by finding explicitly a new independent integral I through the analysis of the sub-coalgebra structure of h 6 . In particular, new completely integrable N-dimensional Hamiltonians describing natural systems, geodesic flows and static electromagnetic Hamiltonians are presented

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Energy Technology Data Exchange (ETDEWEB)

Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

2015-06-15

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Engineering two-photon high-dimensional states through quantum interference

Science.gov (United States)

Zhang, Yingwen; Roux, Filippus S.; Konrad, Thomas; Agnew, Megan; Leach, Jonathan; Forbes, Andrew

2016-01-01

Many protocols in quantum science, for example, linear optical quantum computing, require access to large-scale entangled quantum states. Such systems can be realized through many-particle qubits, but this approach often suffers from scalability problems. An alternative strategy is to consider a lesser number of particles that exist in high-dimensional states. The spatial modes of light are one such candidate that provides access to high-dimensional quantum states, and thus they increase the storage and processing potential of quantum information systems. We demonstrate the controlled engineering of two-photon high-dimensional states entangled in their orbital angular momentum through Hong-Ou-Mandel interference. We prepare a large range of high-dimensional entangled states and implement precise quantum state filtering. We characterize the full quantum state before and after the filter, and are thus able to determine that only the antisymmetric component of the initial state remains. This work paves the way for high-dimensional processing and communication of multiphoton quantum states, for example, in teleportation beyond qubits. PMID:26933685

Optical cavity cooling of mechanical modes of a semiconductor nanomembrane

DEFF Research Database (Denmark)

Usami, Koji; Naesby, A.; Bagci, Tolga

2012-01-01

Mechanical oscillators can be optically cooled using a technique known as optical-cavity back-action. Cooling of composite metal–semiconductor mirrors, dielectric mirrors and dielectric membranes has been demonstrated. Here we report cavity cooling of mechanical modes in a high-quality-factor and......Mechanical oscillators can be optically cooled using a technique known as optical-cavity back-action. Cooling of composite metal–semiconductor mirrors, dielectric mirrors and dielectric membranes has been demonstrated. Here we report cavity cooling of mechanical modes in a high...

Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice.

Science.gov (United States)

Bonilla, L L; Carretero, M; Segura, A

2017-12-01

When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice

Science.gov (United States)

Bonilla, L. L.; Carretero, M.; Segura, A.

2017-12-01

When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Directory of Open Access Journals (Sweden)

Bingqi Sun

2018-06-01

Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

Interface between path and orbital angular momentum entanglement for high-dimensional photonic quantum information.

Science.gov (United States)

Fickler, Robert; Lapkiewicz, Radek; Huber, Marcus; Lavery, Martin P J; Padgett, Miles J; Zeilinger, Anton

2014-07-30

Photonics has become a mature field of quantum information science, where integrated optical circuits offer a way to scale the complexity of the set-up as well as the dimensionality of the quantum state. On photonic chips, paths are the natural way to encode information. To distribute those high-dimensional quantum states over large distances, transverse spatial modes, like orbital angular momentum possessing Laguerre Gauss modes, are favourable as flying information carriers. Here we demonstrate a quantum interface between these two vibrant photonic fields. We create three-dimensional path entanglement between two photons in a nonlinear crystal and use a mode sorter as the quantum interface to transfer the entanglement to the orbital angular momentum degree of freedom. Thus our results show a flexible way to create high-dimensional spatial mode entanglement. Moreover, they pave the way to implement broad complex quantum networks where high-dimensionally entangled states could be distributed over distant photonic chips.

Thermalization of a two-dimensional photonic gas in a `white wall' photon box

Science.gov (United States)

Klaers, Jan; Vewinger, Frank; Weitz, Martin

2010-07-01

Bose-Einstein condensation, the macroscopic accumulation of bosonic particles in the energetic ground state below a critical temperature, has been demonstrated in several physical systems. The perhaps best known example of a bosonic gas, blackbody radiation, however exhibits no Bose-Einstein condensation at low temperatures. Instead of collectively occupying the lowest energy mode, the photons disappear in the cavity walls when the temperature is lowered-corresponding to a vanishing chemical potential. Here we report on evidence for a thermalized two-dimensional photon gas with a freely adjustable chemical potential. Our experiment is based on a dye-filled optical microresonator, acting as a `white wall' box for photons. Thermalization is achieved in a photon-number-conserving way by photon scattering off the dye molecules, and the cavity mirrors provide both an effective photon mass and a confining potential-key prerequisites for the Bose-Einstein condensation of photons. As a striking example of the unusual system properties, we demonstrate a yet unobserved light concentration effect into the centre of the confining potential, an effect with prospects for increasing the efficiency of diffuse solar light collection.

Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

KAUST Repository

Wu, Xue-Jun

2016-03-14

The rational synthesis of hierarchical three-dimensional nanostructures with specific compositions, morphologies and functionalities is important for applications in a variety of fields ranging from energy conversion and electronics to biotechnology. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective facets of hexagonal-shaped nanoplates, either on the two basal facets of the nanoplate, or on one basal facet, or on the two basal facets and six side facets. The seed engineering of 2D hexagonal-shaped nanoplates is the key factor for growth of the three resulting types of 1D/2D nanostructures. The wurtzite- and zinc-blende-type polymorphs of semiconductors are used to determine the facet-selective epitaxial growth of 1D nanorod arrays, resulting in the formation of different hierarchical three-dimensional (3D) nanostructures. © 2016 Macmillan Publishers Limited. All rights reserved.

A semi-Dirac point and an electromagnetic topological transition in a dielectric photonic crystal

KAUST Repository

Wu, Ying

2014-01-01

Accidental degeneracy in a photonic crystal consisting of a square array of elliptical dielectric cylinders leads to both a semi-Dirac point at the center of the Brillouin zone and an electromagnetic topological transition (ETT). A perturbation method is deduced to affirm the peculiar linear-parabolic dispersion near the semi-Dirac point. An effective medium theory is developed to explain the simultaneous semi-Dirac point and ETT and to show that the photonic crystal is either a zero-refractive-index material or an epsilon-near-zero material at the semi-Dirac point. Drastic changes in the wave manipulation properties at the semi-Dirac point, resulting from ETT, are described.©2014 Optical Society of America.

High-dimensional quantum key distribution with the entangled single-photon-added coherent state

Energy Technology Data Exchange (ETDEWEB)

Wang, Yang [Zhengzhou Information Science and Technology Institute, Zhengzhou, 450001 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Bao, Wan-Su, E-mail: 2010thzz@sina.com [Zhengzhou Information Science and Technology Institute, Zhengzhou, 450001 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Bao, Hai-Ze; Zhou, Chun; Jiang, Mu-Sheng; Li, Hong-Wei [Zhengzhou Information Science and Technology Institute, Zhengzhou, 450001 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

2017-04-25

High-dimensional quantum key distribution (HD-QKD) can generate more secure bits for one detection event so that it can achieve long distance key distribution with a high secret key capacity. In this Letter, we present a decoy state HD-QKD scheme with the entangled single-photon-added coherent state (ESPACS) source. We present two tight formulas to estimate the single-photon fraction of postselected events and Eve's Holevo information and derive lower bounds on the secret key capacity and the secret key rate of our protocol. We also present finite-key analysis for our protocol by using the Chernoff bound. Our numerical results show that our protocol using one decoy state can perform better than that of previous HD-QKD protocol with the spontaneous parametric down conversion (SPDC) using two decoy states. Moreover, when considering finite resources, the advantage is more obvious. - Highlights: • Implement the single-photon-added coherent state source into the high-dimensional quantum key distribution. • Enhance both the secret key capacity and the secret key rate compared with previous schemes. • Show an excellent performance in view of statistical fluctuations.

High-dimensional quantum key distribution with the entangled single-photon-added coherent state

International Nuclear Information System (INIS)

Wang, Yang; Bao, Wan-Su; Bao, Hai-Ze; Zhou, Chun; Jiang, Mu-Sheng; Li, Hong-Wei

2017-01-01

High-dimensional quantum key distribution (HD-QKD) can generate more secure bits for one detection event so that it can achieve long distance key distribution with a high secret key capacity. In this Letter, we present a decoy state HD-QKD scheme with the entangled single-photon-added coherent state (ESPACS) source. We present two tight formulas to estimate the single-photon fraction of postselected events and Eve's Holevo information and derive lower bounds on the secret key capacity and the secret key rate of our protocol. We also present finite-key analysis for our protocol by using the Chernoff bound. Our numerical results show that our protocol using one decoy state can perform better than that of previous HD-QKD protocol with the spontaneous parametric down conversion (SPDC) using two decoy states. Moreover, when considering finite resources, the advantage is more obvious. - Highlights: • Implement the single-photon-added coherent state source into the high-dimensional quantum key distribution. • Enhance both the secret key capacity and the secret key rate compared with previous schemes. • Show an excellent performance in view of statistical fluctuations.

Metal-coated semiconductor nanostructures and simulation of photon extraction and coupling to optical fibers for a solid-state single-photon source

International Nuclear Information System (INIS)

Suemune, Ikuo; Nakajima, Hideaki; Liu, Xiangming; Odashima, Satoru; Asano, Tomoya; Iijima, Hitoshi; Huh, Jae-Hoon; Idutsu, Yasuhiro; Sasakura, Hirotaka; Kumano, Hidekazu

2013-01-01

We have realized metal-coated semiconductor nanostructures for a stable and efficient single-photon source (SPS) and demonstrated improved single-photon extraction efficiency by the selection of metals and nanostructures. We demonstrate with finite-difference time-domain (FDTD) simulations that inclination of a pillar sidewall, which changes the structure to a nanocone, is effective in improving the photon extraction efficiency. We demonstrate how such nanocone structures with inclined sidewalls are fabricated with reactive ion etching. With the optimized design, a photon extraction efficiency to outer airside as high as ∼97% generated from a quantum dot in a nanocone structure is simulated, which is the important step in realizing SPS on-demand operations. We have also examined the direct contact of such a metal-embedded nanocone structure with a single-mode fiber facet as a simple and practical method for preparing fiber-coupled SPS and demonstrated practical coupling efficiencies of ∼16% with FDTD simulation. (paper)

Demonstration of tunable microwave photonic notch filters using slow and fast light effects in semiconductor optical amplifiers

DEFF Research Database (Denmark)

Xue, Weiqi; Sales, Salvador; Mørk, Jesper

2009-01-01

We introduce a novel scheme based on slow and fast light effects in semiconductor optical amplifiers, to implement a microwave photonic notch filter with ~100% fractional tuning range at a microwave frequency of 30 GHz....

Two-dimensional flexible nanoelectronics

Science.gov (United States)

Akinwande, Deji; Petrone, Nicholas; Hone, James

2014-12-01

2014/2015 represents the tenth anniversary of modern graphene research. Over this decade, graphene has proven to be attractive for thin-film transistors owing to its remarkable electronic, optical, mechanical and thermal properties. Even its major drawback--zero bandgap--has resulted in something positive: a resurgence of interest in two-dimensional semiconductors, such as dichalcogenides and buckled nanomaterials with sizeable bandgaps. With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are now in place to advance integrated flexible nanoelectronics, which uniquely take advantage of the unmatched portfolio of properties of two-dimensional crystals, beyond the capability of conventional thin films for ubiquitous flexible systems.

Spin-Orbit Coupling for Photons and Polaritons in Microstructures

Directory of Open Access Journals (Sweden)

V. G. Sala

2015-03-01

Full Text Available We use coupled micropillars etched out of a semiconductor microcavity to engineer a spin-orbit Hamiltonian for photons and polaritons in a microstructure. The coupling between the spin and orbital momentum arises from the polarization-dependent confinement and tunneling of photons between adjacent micropillars arranged in the form of a hexagonal photonic molecule. It results in polariton eigenstates with distinct polarization patterns, which are revealed in photoluminescence experiments in the regime of polariton condensation. Thanks to the strong polariton nonlinearities, our system provides a photonic workbench for the quantum simulation of the interplay between interactions and spin-orbit effects, particularly when extended to two-dimensional lattices.

Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

Science.gov (United States)

Suh, Joonki

Recent advances in material science and semiconductor processing have been achieved largely based on in-depth understanding, efficient management and advanced application of point defects in host semiconductors, thus finding the relevant techniques such as doping and defect engineering as a traditional scientific and technological solution. Meanwhile, two- dimensional (2D) layered semiconductors currently draw tremendous attentions due to industrial needs and their rich physics at the nanoscale; as we approach the end of critical device dimensions in silicon-based technology, ultra-thin semiconductors have the potential as next- generation channel materials, and new physics also emerges at such reduced dimensions where confinement of electrons, phonons, and other quasi-particles is significant. It is therefore rewarding and interesting to understand and redefine the impact of lattice defects by investigating their interactions with energy/charge carriers of the host matter. Potentially, the established understanding will provide unprecedented opportunities for realizing new functionalities and enhancing the performance of energy harvesting and optoelectronic devices. In this thesis, multiple novel 2D layered semiconductors, such as bismuth and transition- metal chalcogenides, are explored. Following an introduction of conventional effects induced by point defects in semiconductors, the related physics of electronically active amphoteric defects is revisited in greater details. This can elucidate the complication of a two-dimensional electron gas coexisting with the topological states on the surface of bismuth chalcogenides, recently suggested as topological insulators. Therefore, native point defects are still one of the keys to understand and exploit topological insulators. In addition to from a fundamental science point of view, the effects of point defects on the integrated thermal-electrical transport, as well as the entropy-transporting process in

Three-dimensional charge transport in organic semiconductor single crystals.

Science.gov (United States)

He, Tao; Zhang, Xiying; Jia, Jiong; Li, Yexin; Tao, Xutang

2012-04-24

Three-dimensional charge transport anisotropy in organic semiconductor single crystals - both plates and rods (above and below, respectively, in the figure) - is measured in well-performing organic field-effect transistors for the first time. The results provide an excellent model for molecular design and device preparation that leads to good performance. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Symmetry-Induced Light Confinement in a Photonic Quasicrystal-Based Mirrorless Cavity

Directory of Open Access Journals (Sweden)

Gianluigi Zito

2016-09-01

Full Text Available We numerically investigate the electromagnetic field localization in a two-dimensional photonic quasicrystal generated with a holographic tiling. We demonstrate that light confinement can be induced into an air mirrorless cavity by the inherent symmetry of the spatial distribution of the dielectric scatterers forming the side walls of the open cavity. Furthermore, the propagation direction can be controlled by suitable designs of the structure. This opens up new avenues for designing photonic materials and devices.

Graphene-based photonic crystal

International Nuclear Information System (INIS)

Berman, Oleg L.; Boyko, Vladimir S.; Kezerashvili, Roman Ya.; Kolesnikov, Anton A.; Lozovik, Yurii E.

2010-01-01

A novel type of photonic crystal formed by embedding a periodic array of constituent stacks of alternating graphene and dielectric discs into a background dielectric medium is proposed. The photonic band structure and transmittance of such photonic crystal are calculated. The graphene-based photonic crystals can be used effectively as the frequency filters and waveguides for the far infrared region of electromagnetic spectrum. Due to substantial suppression of absorption of low-frequency radiation in doped graphene the damping and skin effect in the photonic crystal are also suppressed. The advantages of the graphene-based photonic crystal are discussed.