Study of Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

Science.gov (United States)

Shostachenko, S. A.; Porokhonko, Y. A.; Zakharchenko, R. V.; Burdykin, M. S.; Ryzhuk, R. V.; Kargin, N. I.; Kalinin, B. V.; Belov, A. A.; Vasiliev, A. N.

2017-12-01

This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10-6 Ω·cm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

Energy Technology Data Exchange (ETDEWEB)

Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

2016-08-15

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

A new method of making ohmic contacts to p-GaN

Energy Technology Data Exchange (ETDEWEB)

Hernández-Gutierrez, C.A., E-mail: chernandez@fis.cinvestav.mx [DNyN, Cinvestav-IPN, México, DF, 07360 (Mexico); Kudriavtsev, Yu. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Mota, Esteban [ESIME, Instituto Politécnico Nacional, México, DF, 07738 (Mexico); Hernández, A.G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Casallas-Moreno, Y.L.; López-López, M. [Departamento Física, Cinvestav-IPN, México, DF, 07360 (Mexico)

2016-12-01

Highlights: • Low resistance Ohmic contacts preparation is based on low energy high dose In{sup +} ion implantation into Metal/p-GaN to achieve a thin layer of In{sub x}Ga{sub 1-x}N just at the interface. • The specific ohmic contact was reduced from 10{sup −2} Ωcm{sup 2} to 2.5 × 10{sup −4} Ωcm{sup 2}. - Abstract: The structural, chemical, and electrical characteristics of In{sup +} ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In{sup +} ions with an implantation dose of 5 × 10{sup 15} ions/cm{sup 2} at room temperature to form a thin layer of In{sub x}Ga{sub 1-x}N located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In{sup +} implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10{sup −4} Ωcm{sup 2} was achieved for Au/Ni/p-In{sub x}Ga{sub 1-x}N/p-GaN ohmic contacts.

Mechanisms of current flow in metal-semiconductor ohmic contacts

International Nuclear Information System (INIS)

Blank, T. V.; Gol'dberg, Yu. A.

2007-01-01

Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

Directory of Open Access Journals (Sweden)

Liang Song

2018-03-01

Full Text Available In this paper, we have studied the performance of Ti/Al/Ni/Au ohmic contact with different Al and Au thicknesses and pretreatments. The temperature dependence of contact resistances (Rc was investigated and it shows that there are different optimal annealing temperatures with different metal thicknesses and pretreatments. The optimal annealing temperature is affected by Al and Au thickness and AlGaN thickness. The etched AlGaN barrier is useful to achieve good ohmic contact (0.24 Ω·mm with a low annealing temperature. Only the contact resistances of the samples with 130 nm Al layer kept stable and the contact resistances of the samples with 100nm and 160 nm Al layers increased with the measurement temperatures. The contact resistances showed a similar increase and then keep stable trend for all the samples in the long-term 400 °C aging process. The ohmic metal of 20/130/50/50 nm Ti/Al/Ni/Au with ICP etching is the superior candidate considering the contact resistance and reliability.

Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

Science.gov (United States)

Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

2017-08-23

We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

Silver antimony Ohmic contacts to moderately doped n-type germanium

Energy Technology Data Exchange (ETDEWEB)

Dumas, D. C. S.; Gallacher, K.; Millar, R.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); MacLaren, I. [SUPA School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Myronov, M.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2014-04-21

A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

International Nuclear Information System (INIS)

Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Ao, Jin-Ping; Zhu, Huichao

2016-01-01

An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl 4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10 −9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs. (paper)

Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

Science.gov (United States)

Wang, Cong; Kim, Nam-Young

2012-02-07

Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

Effect of the ohmic drop in a RPC-LIKE chamber for measurements of electron transport parameters

Energy Technology Data Exchange (ETDEWEB)

Petri, Anna R.; Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: annapetri@usp.br, E-mail: josemary@ipen.br, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil); Mangiarotti, Alessio, E-mail: alessio@if.usp.br [Universidade de São Paulo (IF/USP), SP (Brazil). Instituto de Física

2017-07-01

The main advantage of Resistive Plate Chambers (RPCs), applied, for instance, in High-Energy Experiments and Positron Emission Tomography (PET), is that it is spark-protected due to the presence of, at least, one high resistive electrode. However, the ohmic drop across the latter can affect the charge multiplication significantly. In this work, we investigate this effect in a RPC-like chamber. The counter was filled with nitrogen at atmospheric pressure and the primary ionization was produced by the incidence of nitrogen pulsed laser beam on an aluminum cathode. The illumination area of the cathode was measured using a foil of millimetric paper overlaid on this electrode. In this way, the resistance of the glass anode could be estimated using the known resistivity of the glass (ρ=2×10{sup 12} Ω.cm). Therefore, the voltage drop across the dielectric was calculated by the product of the current across the gas gap and the anode resistance. In order to mitigate the effect of the resistive electrode, the laser beam intensity was limited by interposing metallic meshes between the laser and the chamber window. The dependence of the ohmic drop from the applied voltage was analyzed. The results obtained shown that, without the meshes, the ohmic drop corresponds up to 7% of the applied voltage, preventing the detection system to reach values of density-normalized electric fields in the gas gap (E{sub eff}/N) higher than 166 Td. By minimizing the laser beam intensity and, consequently, the primary ionization, the ohmic drop represented only 0.2% of the applied voltage, extending the E{sub eff} /N range up to 175 Td. (author)

Applicability of the lattice Boltzmann method to determine the ohmic resistance in equivalent resistor connections

Science.gov (United States)

Espinoza-Andaluz, Mayken; Barzola, Julio; Guarochico-Moreira, Víctor H.; Andersson, Martin

2017-12-01

Knowing the ohmic resistance in the materials allow to know in advance its electrical behavior when a potential difference is applied, and therefore the prediction of the electrical performance can be achieved in a most certain manner. Although the Lattice Boltzmann method (LBM) has been applied to solve several physical phenomena in complex geometries, it has only been used to describe the fluid phase, but applicability studies of LBM on the solid-electric-conducting material have not been carried out yet. The purpose of this paper is to demonstrate the accuracy of calculating the equivalent resistor connections using LBM. Several series and parallel resistor connections are effected. All the computations are carried out with 3D models, and the domain materials are designed by the authors.

Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Directory of Open Access Journals (Sweden)

Wojciech Macherzynski

2016-01-01

Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Yu, Hailong; Shen, Huajun, E-mail: shenhuajun@ime.ac.cn; Tang, Yidan; Bai, Yun; Liu, Xinyu [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xufang [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wu, Yudong; Liu, Kean [Zhuzhou CSR Times Electric Co., Ltd, ZhuZhou 412001 (China)

2015-01-14

Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities were also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC contacts degraded in different degrees, and the contact morphology deteriorated with the increases of the average surface roughness and interface voids. X-ray spectra showed that Ni{sub 2}Si and Ti{sub 3}SiC{sub 2}, which were formed during ohmic contact annealing and contributed to low contact resistivity, were stable under high temperature storage. The existence of the TiAl{sub 3} and NiAl{sub 3} intermetallic phases was helpful to prevent Al agglomeration on the interface and make the contacts thermally stable. Auger electron spectroscopy indicated that the incorporation of oxygen at the surface and interface led to the oxidation of Al or Ti resulting in increased contact resistance. Also, the formation of these oxides roughened the surface and interface. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism dominates the current transport for contacts before and after the thermal treatment. It suggests that the Ni/Ti/Al composite ohmic contacts are promising for SiC devices to be used in high temperature applications.

Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

Science.gov (United States)

Khanna, Rohit

In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

Science.gov (United States)

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-07-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Characterization of recessed Ohmic contacts to AlGaN/GaN

NARCIS (Netherlands)

Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

2015-01-01

In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to

Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss

International Nuclear Information System (INIS)

Kim, Sun-Hong; Kim, Sung-Soo

2010-01-01

For the aim of wide-band noise absorbers with a special design for low frequency performance, this study proposes conductive indium-tin oxide (ITO) thin films as the absorbent materials in microstrip line. ITO thin films were deposited on the polyimide film substrates by rf magnetron cosputtering of In 2 O 3 and Sn targets. The deposited ITO films show a typical value of electrical resistivity (∼10 -4 Ω m) and sheet resistance can be controlled in the range of 20-230 Ω by variation in film thickness. Microstrip line with characteristic impedance of 50 Ω was used for determining their noise absorbing properties. It is found that there is an optimum sheet resistance of ITO films for the maximum power absorption. Reflection parameter (S 11 ) is increased with decrease in sheet resistance due to impedance mismatch. On the while, transmission parameter (S 21 ) is decreased with decrease in sheet resistance due to larger Ohmic loss of the ITO films. Experimental results and computational prediction show that the optimum sheet resistance is about 100 Ω. For this film, greater power absorption is predicted in the lower frequency region than ferrite thin films of high magnetic loss, which indicates that Ohmic loss is the predominant loss parameter for power absorption in the low frequency range.

Super high field ohmically heated tokamak operation

International Nuclear Information System (INIS)

Cohn, D.R.; Bromberg, L.; Leclaire, R.J.; Potok, R.E.; Jassby, D.L.

1986-01-01

The authors discuss a super high field mode of tokamak operation that uses ohmic heating or near ohmic heating to ignition. The super high field mode of operation uses very high values of Β/sup 2/α, where Β is the magnetic field and a is the minor radius (Β/sup 2/α > 100 T/sup 2/m). We analyze copper magnet devices with major radii from 1.7 to 3.0 meters. Minimizing or eliminating the need for auxiliary heating has the potential advantages of reducing uncertainty in extrapolating the energy confinement time of current tokamak devices, and reducing engineering problems associated with large auxiliary heating requirements. It may be possible to heat relatively short pulse, inertially cooled tokamaks to ignition with ohmic power alone. However, there may be advantages in using a very small amount of auxiliary power (less than the ohmic heating power) to boost the ohmic heating and provide a faster start-up, expecially in relatively compact devices

Analytical models of Ohmic heating and conventional heating in food processing

Science.gov (United States)

Serventi, A.; Bozzoli, F.; Rainieri, S.

2017-11-01

Ohmic heating is a food processing operation in which an electric current is passed through a food and the electrical resistance of the food causes the electric power to be transformed directly into heat. The heat is not delivered through a surface as in conventional heat exchangers but it is internally generated by Joule effect. Therefore, no temperature gradient is required and it origins quicker and more uniform heating within the food. On the other hand, it is associated with high energy costs and its use is limited to a particular range of food products with an appropriate electrical conductivity. Sterilization of foods by Ohmic heating has gained growing interest in the last few years. The aim of this study is to evaluate the benefits of Ohmic heating with respect to conventional heat exchangers under uniform wall temperature, a condition that is often present in industrial plants. This comparison is carried out by means of analytical models. The two different heating conditions are simulated under typical circumstances for the food industry. Particular attention is paid to the uniformity of the heat treatment and to the heating section length required in the two different conditions.

Ignited tokamak devices with ohmic-heating dominated startup

International Nuclear Information System (INIS)

Cohn, D.R.; Bromberg, L.; Jassby, D.L.

1986-01-01

Startup of tokamaks such that the auxiliary heating power is significantly less than the ohmic heating power at all times during heating to ignition can be referred to as ''Ohmic-heating dominated startup.'' Operation in this mode could increase the certainty of heating to ignition since energy confinement during startup may be described by present scaling laws for ohmic heating. It could also reduce substantially the auxiliary heating power (the required power may be quite large for auxiliary-heating dominated startup). These advantages might be realized without the potentially demanding requirements for pure ohmic heating to ignition. In this paper the authors discuss the requirements for ohmic-heating dominated startup and present illustrative design parameters for compact experiment ignition devices that use high performance copper magnets

W and WSix Ohmic contacts on p- and n-type GaN

International Nuclear Information System (INIS)

Cao, X.A.; Ren, F.; Pearton, S.J.; Zeitouny, A.; Eizenberg, M.; Zolper, J.C.; Abernathy, C.R.; Han, J.; Shul, R.J.; Lothian, J.R.

1999-01-01

W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 degree C. There is minimal reaction (≤100 Angstrom broadening of the metal/GaN interface) even at 1000 degree C. Specific contact resistances in the 10 -5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5x10 20 cm -3 , after annealing at 950 degree C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250 - 300 degree C, where the specific contact resistances are, typically, in the 10 -2 Ω cm 2 range. The best contacts for W and WSi x are obtained after 700 degree C annealing for periods of 30 - 120 s. The formation of β-W 2 N interfacial phases appear to be important in determining the contact quality. copyright 1999 American Vacuum Society

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Schmid, A., E-mail: alexander.schmid@physik.tu-freiberg.de; Schroeter, Ch.; Otto, R.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg (Germany); Schuster, M. [Namlab gGmbH, 01187 Dresden (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg (Germany)

2015-02-02

Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

Effect of electrode type in the resistive switching behaviour of TiO2 thin films

International Nuclear Information System (INIS)

Hernández-Rodríguez, E; Zapata-Torres, M; Márquez-Herrera, A; Zaleta-Alejandre, E; Meléndez-Lira, M; Cruz, W de la

2013-01-01

The influence of the electrode/active layer on the electric-field-induced resistance-switching phenomena of TiO 2 -based metal-oxide-metal devices (MOM) is studied. TiO 2 active layers were fabricated by the reactive rf-sputtering technique and devices were made by sandwiching between several metal electrodes. Three different MOM devices were made, according with the junction type formed between the electrode and the TiO 2 active layer, those where Ohmic-Ohmic, Ohmic-Schottky and Schottky-Schottky. The junction type was tested by electrical I-V measurements. It was found that MOM devices made with the Ohmic-Ohmic combination did not show any resistive switching behaviour in contrast with devices made with Ohmic-Schottky and Schottky-Schottky combinations. From a detailed analysis of the I-V curves it was found that transport characteristics are Ohmic for the low-resistance state for all the contacts combinations of the MOM devices, whereas in the high-resistance state it depends on contact combinations and can be identified as Ohmic, Schottky and Poole-Frenkel type. These conduction mechanisms in the low- and high-resistance states suggest that formation and rupture of conducting filaments through the film oxide is the mechanism responsible for the resistance switching.

Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

NARCIS (Netherlands)

Jacobs, B.; Krämer, M.C.J.C.M.; Geluk, E.J.; Karouta, F.

2002-01-01

We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm

Ohmic Heating: An Emerging Concept in Organic Synthesis.

Science.gov (United States)

Silva, Vera L M; Santos, Luis M N B F; Silva, Artur M S

2017-06-12

The ohmic heating also known as direct Joule heating, is an advanced thermal processing method, mainly used in the food industry to rapidly increase the temperature for either cooking or sterilization purposes. Its use in organic synthesis, in the heating of chemical reactors, is an emerging method that shows great potential, the development of which has started recently. This Concept article focuses on the use of ohmic heating as a new tool for organic synthesis. It presents the fundamentals of ohmic heating and makes a qualitative and quantitative comparison with other common heating methods. A brief description of the ohmic reactor prototype in operation is presented as well as recent examples of its use in organic synthesis at laboratory scale, thus showing the current state of the research. The advantages and limitations of this heating method, as well as its main current applications are also discussed. Finally, the prospects and potential implications of ohmic heating in future research in chemical synthesis are proposed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

International Nuclear Information System (INIS)

Warren, C.E.; Wagner, B.F.; Anderson, W.A.

1986-01-01

The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

Statistical analyses of local transport coefficients in Ohmic ASDEX discharges

International Nuclear Information System (INIS)

Simmet, E.; Stroth, U.; Wagner, F.; Fahrbach, H.U.; Herrmann, W.; Kardaun, O.J.W.F.; Mayer, H.M.

1991-01-01

Tokamak energy transport is still an unsolved problem. Many theoretical models have been developed, which try to explain the anomalous high energy-transport coefficients. Up to now these models have been applied to global plasma parameters. A comparison of transport coefficients with global confinement time is only conclusive if the transport is dominated by one process across the plasma diameter. This, however, is not the case in most Ohmic confinement regimes, where at least three different transport mechanisms play an important role. Sawtooth activity leads to an increase in energy transport in the plasma centre. In the intermediate region turbulent transport is expected. Candidates here are drift waves and resistive fluid turbulences. At the edge, ballooning modes or rippling modes could dominate the transport. For the intermediate region, one can deduce theoretical scaling laws for τ E from turbulent theories. Predicted scalings reproduce the experimentally found density dependence of τ E in the linear Ohmic confinement regime (LOC) and the saturated regime (SOC), but they do not show the correct dependence on the isotope mass. The relevance of these transport theories can only be tested in comparing them to experimental local transport coefficients. To this purpose we have performed transport calculations on more than a hundred Ohmic ASDEX discharges. By Principal Component Analysis we determine the dimensionless components which dominate the transport coefficients and we compare the results to the predictions of various theories. (author) 6 refs., 2 figs., 1 tab

Energy Confinement of both Ohmic and LHW Plasma on EAST

International Nuclear Information System (INIS)

Yang Yao; Gao Xiang

2011-01-01

Study on the characters of energy confinement in both Ohmic and lower hybrid wave (LHW) discharges on EAST is conducted and the linear Ohmic confinement (LOC), saturated ohmic confinement (SOC) and improved Ohmic confinement (IOC) regimes are investigated in this paper. It is observed that an improved confinement mode characterized by both a drop of D α line intensity and an increase in line average density can be triggered by a gas puffing pulse. (magnetically confined plasma)

Ohmic losses in coaxial resonators with longitudinal inner-outer corrugation

Energy Technology Data Exchange (ETDEWEB)

Shenyong Hou, A. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yangtze Normal University, Chongqing 408001 (China); Sheng Yu, B.; Hongfu Li, C.; Qixiang Zhao, D. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Xiang Li, E. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Queen Mary University of London, London E1 4NS (United Kingdom)

2013-05-15

In this paper, a coaxial resonator with longitudinal inner-outer corrugation is introduced. Its eigen-equation and expression of ohmic losses are derived. Ohmic losses in the cavity are investigated. Results show that ohmic losses in the outer and inner conductors share a similar variation trend, while the former is larger than the later. What's more, changes of the inner and outer slot depth and width induce different variations of ohmic losses on the surface of the inner and outer conductors.

Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

International Nuclear Information System (INIS)

Liu, Bingbing; Qin, Fuwen; Wang, Dejun

2015-01-01

Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

Ti/Al Ohmic Contacts to n-Type GaN Nanowires

Directory of Open Access Journals (Sweden)

Gangfeng Ye

2011-01-01

Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN

Science.gov (United States)

Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

2014-11-01

Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

Empirical scaling for present ohmic heated tokamaks

International Nuclear Information System (INIS)

Daughney, C.

1975-06-01

Empirical scaling laws are given for the average electron temperature and electron energy confinement time as functions of plasma current, average electron density, effective ion charge, toroidal magnetic field, and major and minor plasma radius. The ohmic heating is classical, and the electron energy transport is anomalous. The present scaling indicates that ohmic-heating becomes ineffective with larger experiments. (U.S.)

Neoclassical MHD equilibria with ohmic current

International Nuclear Information System (INIS)

Tokuda, Shinji; Takeda, Tatsuoki; Okamoto, Masao.

1989-01-01

MHD equilibria of tokamak plasmas with neoclassical current effects (neoclassical conductivity and bootstrap current) were calculated self-consistently. Neoclassical effects on JFT-2M tokamak plasmas, sustained by ohmic currents, were studied. Bootstrap currents flow little for L-mode type equilibria because of low attainable values of poloidal beta, β J . H-mode type equilibria give bootstrap currents of 30% ohmic currents for β J attained by JFT-2M and 100% for β J ≥ 1.5, both of which are sufficient to change the current profiles and the resultant MHD equilibria. Neoclassical conductivity which has roughly half value of the classical Spitzer conductivity brings peaked ohmic current profiles to yield low safety factor at the magnetic axis. Neoclassical conductivity reduces the value of effective Z(Z eff ) which is necessary to give the observed one-turn voltage but it needs impurities accumulating at the center when such peaked current profiles are not observed. (author)

Direct high-temperature ohmic heating of metals as liquid pipes.

Science.gov (United States)

Grosse, A V; Cahill, J A; Liddell, W L; Murphy, W J; Stokes, C S

1968-05-03

When a sufficiently high electric current is passed through a liquid metal, the electromagnetic pressure pinches off the liquid metal and interrupts the flow of current. For the first time the pinch effect has been overcome by use of centrifugal acceleration. By rotation of a pipe of liquid metal, tin or bismuth or their alloys, at sufficiently high speed, it can be heated electrically without intermission of the electric current. One may now heat liquid metallic substances, by resistive (ohmic) heating, to 5000 degrees K and perhaps higher temperatures.

Structural analysis of equilibrium and ohmic heating coil assemblies for the TFTR

International Nuclear Information System (INIS)

Chattopadhyay, S.

1975-10-01

The structural adequacy of the equilibrium and ohmic heating coils and their support systems for the TFTR device has been investigated. The capability of the coils to span ribs of the support structure has been established. The support structure has been found to be effective in resisting the magnetic forces in the coils. The bands encircling the outboard coils and the band tensioning devices have been found to perform adequately. The analysis is based on October 1975 conceptual design

Study of degradation processes kinetics in ohmic contacts of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures under influence of temperature

Science.gov (United States)

Makeev, M. O.; Meshkov, S. A.

2017-07-01

The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

Energy confinement in Ohmic H-mode in TUMAN-3M

International Nuclear Information System (INIS)

Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Lebedev, S.V.; Levin, L.S.; Tukachinsky, A.S.

1997-01-01

The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. In 1994 new vacuum vessel had been installed in TUMAN-3 tokamak. The vessel has the same sizes as old one (R 0 =0.55 m, a 1 =0.24 m). New vessel was designed to reduce mechanical stresses in the walls during B T ramp phase of a shot. Therefore modified device - TUMAN-3M is able to produce higher B T and I p , up to 2 T and 0.2 MA respectively. During first experimental run device was operated in Ohmic Regime. In these experiments the possibility to achieve Ohmic H-mode was studied. The study of the parametric dependencies of the energy confinement time in both OH and Ohmic H-mode was performed. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Energy confinement time in TUMAN-3/TUMAN-3M Ohmic H-mode has revealed good agreement with JET/DIII-D/ASDEX scaling for ELM-free H-mode, resulting in very long τ E at the high plasma current discharges. (author)

High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

KAUST Repository

Yonkee, Benjamin P.; Young, Erin; DenBaars, Steven P; Speck, James S; Nakamura, Shuji

2017-01-01

Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

KAUST Repository

Yonkee, Benjamin P.

2017-10-31

Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

Determination of the Resistance of Cone-Shaped Solid Electrodes

DEFF Research Database (Denmark)

Frandsen, Henrik Lund; Hendriksen, Peter Vang; Koch, Søren

2017-01-01

during processing can be avoided. Newman's formula for current constriction in the electrolyte is then used to deduce the active contact area based on the ohmic resistance of the cell, and from this the surface specific electro-catalytic activity. However, for electrode materials with low electrical......A cone-shaped electrode pressed into an electrolyte can with advantage be utilized to characterize the electro-catalytic properties of the electrode, because it is less dependent on the electrode microstructure than e.g. thin porous composite electrodes, and reactions with the electrolyte occurring...... conductivity (like Ce1-xPrxO2-δ), the resistance of the cell is significantly influenced by the ohmic resistance of the cone electrode, wherefore it must be included. In this work the ohmic resistance of a cone is modelled analytically based on simplified geometries. The two analytical models only differ...

Technology, applications and modelling of ohmic heating: a review.

Science.gov (United States)

Varghese, K Shiby; Pandey, M C; Radhakrishna, K; Bawa, A S

2014-10-01

Ohmic heating or Joule heating has immense potential for achieving rapid and uniform heating in foods, providing microbiologically safe and high quality foods. This review discusses the technology behind ohmic heating, the current applications and thermal modeling of the process. The success of ohmic heating depends on the rate of heat generation in the system, the electrical conductivity of the food, electrical field strength, residence time and the method by which the food flows through the system. Ohmic heating is appropriate for processing of particulate and protein rich foods. A vast amount of work is still necessary to understand food properties in order to refine system design and maximize performance of this technology in the field of packaged foods and space food product development. Various economic studies will also play an important role in understanding the overall cost and viability of commercial application of this technology in food processing. Some of the demerits of the technology are also discussed.

Ohmic ITBs in Alcator C-Mod

Science.gov (United States)

Fiore, C. L.; Rowan, W. L.; Dominguez, A.; Hubbard, A. E.; Ince-Cushman, A.; Greenwald, M. J.; Lin, L.; Marmar, E. S.; Reinke, M.; Rice, J. E.; Zhurovich, K.

2007-11-01

Internal transport barrier plasmas can arise spontaneously in ohmic Alcator C-Mod plasmas where an EDA H-mode has been developed by magnetic field ramping. These ohmic ITBs share the hallmarks of ITBs created with off-axis ICRF injection in that they have highly peaked density and pressure profiles and the peaking can be suppressed by on-axis ICRF. There is a reduction of particle and thermal flux in the barrier region which then allows the neoclassical pinch to peak the central density. Recent work on ITB onset conditions [1] which was motivated by turbulence studies [2] points to the broadening of the Ti profile with off-axis ICRF acting to reduce the ion temperature gradient. This suppresses ITG instability driven particle fluxes, which is thought to be the primary mechanism for ITB formation. The object of this study is to examine the characteristics of ohmic ITBs to find whether the stability of plasmas and the plasma parameters support the onset model. [1]K. Zhurovich, et al., To be published in Nuclear Fusion [2] D. R. Ernst, et al., Phys. Plasmas 11, 2637 (2004)

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Directory of Open Access Journals (Sweden)

Patrick H. Carey IV

2017-09-01

Full Text Available AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Science.gov (United States)

Carey, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

2017-09-01

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 30 0°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 40 0°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Start-up of the ohmic phase in JET

International Nuclear Information System (INIS)

Tanga, A.; Christiansen, J.P.; Cordey, J.G.; Ejima, S.; Kellman, A.; Lazzaro, E.; Lomas, P.J.; Thomas, P.R.

1985-01-01

JET has been designed to permit the study of plasmas in which alphaparticle heating is a significant part of the power balance. In order to have a sufficient thermonuclear yield and to trap the resulting alphaparticles, JET is similar in its dimensions and plasma current to the next generation of reactor-like devices such as NET, FER and INTOR. For this reason, the authors see the results from the study of the start-up of ohmically heated plasmas in JET as highly relevant. Discussed is the range that has been achieved in all major parameters with ohmic heating. Experiences with the wall conditioning technique and the results of ion cyclotron heating experiments in JET are outlined. This paper also describes the stages of plasma formation, current rise and ohmic flat-top

Dynamical determination of ohmic states of a cylindrical pinch

International Nuclear Information System (INIS)

Schnack, D.D.

1980-04-01

The dual problems of generation and sustainment of the reversed axial field are studied. It is shown that, if a cylindrical plasma is initially in an axisymmetric state with a sufficient degree of paramagnetism, field reversal can be attained by mode activity of a single helicity. The initial paramagnetism may be due to the method of pinch formation, as in fast experiments, or to a gradual altering of the pitch profile resulting from a succession of instabilities. Furthermore, if the total current is kept constant and energy loss and resistivity profiles are included in an ad hoc manner, one finds that the final steady state of the helical instability can be maintained for long times against resistive diffusion without the need for further unstable activity. These states, which possess zero order flow and possibly reversed axial field, represent steady equilibria which simultaneously satisfy force balance and Ohm's law, and are termed Ohmic states

Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

International Nuclear Information System (INIS)

Redondo-Cubero, A; Alves, L C; Corregidor, V; Vázquez, L; Romero, M F; Muñoz, E; Pantellini, A; Lanzieri, C

2014-01-01

The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and scanning electron microscopy, shows a transition from a fractal network of rough and complex island-like structures towards smoother and cauliflower-like fronts with increasing d. Rutherford backscattering spectrometry and energy dispersive x-ray spectroscopy (EDXS) at different energies were used to confirm the in-depth intermixing of the metals relevant for the final contact resistance. EDXS mapping reveals a significant lateral segregation too, where the resulting patterns depend on two competing NiAl x and AuAl x phases, the intermixing being controlled by the available amount of Al. The optimum ohmic resistance is not affected by the patterning process, but is mainly dependent on the partial interdiffusion of the metals. (paper)

Period doubling in a model of magnetoconvection with Ohmic heating

International Nuclear Information System (INIS)

Osman, M. B. H.

2000-01-01

In this work it has been studied an idealized model of rotating nonlinear magneto convection to investigate the effects of Ohmic heating. In the over stable region it was found that Ohmic heating can lead to a period-doubling sequence

Ohmic cooking of whole beef muscle--evaluation of the impact of a novel rapid ohmic cooking method on product quality.

Science.gov (United States)

Zell, Markus; Lyng, James G; Cronin, Denis A; Morgan, Desmond J

2010-10-01

Cylindrical cores of beef semitendinosus (500g) were cooked in a combined ohmic/convection heating system to low (72 degrees C, LTLT) and high (95 degrees C, HTST) target end-point temperatures. A control was also cooked to an end-point temperature of 72 degrees C at the coldest point. Microbial challenge studies on a model meat matrix confirmed product safety. Hunter L-values showed that ohmically heated meat had significantly (pHTST)) relative to the control (56.85). No significant texture differences (p>/=0.05) were suggested by Warner-Bratzler peak load values (34.09, 36.37 vs. 35.19N). Cook loss was significantly (pHTST and the control were more comparable (6.09 and 7.71, respectively). These results demonstrate considerable potential for this application of ohmic heating for whole meats. Copyright (c) 2010 The American Meat Science Association. Published by Elsevier Ltd. All rights reserved.

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

International Nuclear Information System (INIS)

Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

2015-01-01

This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

Simulation of core turbulence measurement in Tore Supra ohmic regimes

NARCIS (Netherlands)

Hacquin, S.; Citrin, J.; Arnichand, H.; Sabot, R.; Bourdelle, C.; Garbet, X.; Kramer-Flecken, A.; Tore Supra team,

2016-01-01

This paper reports on a simulation of reflectometry measurement in Tore Supra ohmic discharges, for which the experimental observations as well as gyrokinetic non-linear computations predict a modification of turbulence spectrum between the linear (LOC) and the saturated ohmic confinement (SOC)

Developing and modelling of ohmic heating for solid food products

DEFF Research Database (Denmark)

Feyissa, Aberham Hailu; Frosch, Stina

Heating of solid foods using the conventional technologies is time-consuming due to the fact that heat transfer is limited by internal conduction within the product. This is a big challenge to food manufactures who wish to heat the product faster to the desired core temperature and to ensure more...... uniform quality across the product. Ohmic heating is one of the novel technologies potentially solving this problem by allowing volumetric heating of the product and thereby reducing or eliminating temperature gradients within the product. However, the application of ohmic heating for solid food products...... such as meat and seafood is not industrially utilized yet. Therefore, the aim of the current work is to model and develop the ohmic heating technology for heating of solid meat and seafood. A 3D mathematical model of coupled heat transfer and electric field during ohmic heating of meat products has been...

Effects of combined gate and ohmic recess on GaN HEMTs

Directory of Open Access Journals (Sweden)

Sunil Kumar

2016-09-01

Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

Ohmic contacts to InN-based materials

Directory of Open Access Journals (Sweden)

Sai P. O.

2016-10-01

Full Text Available The key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact structure properties and optimal conditions for them are presented. Different types of metallization are considered, the advantages and disadvantages of each are determined, including the basic requirements that such contact must meet. There is emphasis on the using multilayer metallization with the barrier layers. In the case of the InAlN/GaN systems, the general approaches of forming ohmic contacts were considered.

Ohmic Heating System for the TFTR Tokamak

International Nuclear Information System (INIS)

Petree, F.; Cassel, R.

1977-01-01

The TFTR Ohmic Heating (OH) System will apply 140,000 volt impulses upon the OH coils to start the plasma. In order to reduce the voltage stress to ground on the OH coils to 12 kV without changing the magnetic field induced by the OH system in the plasma, six d-c current interrupters will be applied to six entry points in the OH coil system. And in order to impart a nearly rectangular shape to these impulses, the voltage determining elements will be nonlinear resistances placed in parallel with the interrupters. These nonlinear resistors, made of semiconducting material, are not normally used in repetitive or continuous duty, and their proper functioning is crucial to the reliable operation of the system. The system described herein, is being revised owing to the impact of revisions to the Toroidal Field Coil System, and to refinements to the OH System design

Computational studies of ohmic heating in the spheromak

International Nuclear Information System (INIS)

Olson, R.E.

1983-01-01

Time-dependent computational simulations using both single-fluid O-D and two-fluid 1 1/2-D models are developed for and utilized in an investigation of the ohmic heating of a spheromak plasma. The plasma density and composition, the applied magnetic field strength, the plasma size, and the plasma current density profile are considered for their effects on the spheromak heating rate and maximum achievable temperature. The feasibility of ohmic ignition of a reactor-size spheromak plasma is also contemplated

The role of titanium aluminide in n-gallium nitride ohmic contact technology

Science.gov (United States)

Pelto, Christopher M.

Ohmic contacts are essential to the realization of efficient and affordable nitride-based electronic and optoelectronic devices. Currently, the most successful ohmic contact schemes to n-GaN are based on the Al/Ti bilayer structure, although the mechanism responsible for the low resistance in these contacts is not sufficiently understood. In this work, the intermetallic TiAl3 has been employed both as a model ohmic contact system to help understand the essential features of the Al/Ti standard contact, as well as a thermally stable oxidation cap for the bilayer structure. A quaternary isotherm of the Al-Ti-Ga-N system was calculated at 600°C, which showed that a sufficient phase topology was present to apply the exchange mechanism to the TiAl 3/GaN couple. The exchange mechanism rationalized the selection of the TiAl3 intermetallic by predicting that an Al-rich AlGaN layer will form at the metal/semiconductor interface. As part of the investigation of these novel contact systems, a thorough characterization was undertaken on both a standard Al/Ti and Au/Ni/Al/Ti contact to n-GaN in which the essential processing parameters and metallurgical properties were identified. The TiAl 3 contact was found to exhibit inferior electrical behavior compared to the Al/Ti bilayer, requiring significantly higher annealing temperatures to achieve comparable specific contact resistance. It is conjectured that this is due to the early formation of a TiN layer at the metal/semiconductor interface of the bilayer contact, even though both contacts are suspected to form the Al-rich nitride layer at higher temperature. As an oxidation cap, the TiAl3 metallization was found to provide much improved performance characteristics compared to the four-layer Au/Al/Ni/Ti standard. The TiAl 3/Al/Ti contact proved to achieve optimal performance at a much lower temperature than the standard, and furthermore showed complete insensitivity to the oxidation content of the annealing ambient. Reaction

Ohmic H-mode studies in TUMAN-3

International Nuclear Information System (INIS)

Lebedev, S.V.; Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Levin, L.S.; Tukachinsky, A.S.; Tendler, M.

1994-01-01

The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. The crucial role of the radial electric field in the L-H transition was found in the experiments with boundary biasing. The possibility of initiating the H-mode using single pellet injection was demonstrated. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Thermal energy confinement time enhanced by a factor of 10 compared to predictions of Neo-Alcator scaling. Longest energy confinement time (30 ms) was obtained in the small tokamak TUMAN-3. Absolute values of the energy confinement time are in agreement with scaling proposed for description of the ELM-free H-modes in devices with powerful auxiliary heating (''DIII-D/JET H-mode'' scaling). (author)

Analysis of a global energy confinement database for JET ohmic plasmas

International Nuclear Information System (INIS)

Bracco, G.; Thomsen, K.

1997-01-01

A database containing global energy confinement data for JET ohmic plasmas in the campaigns from 1984 to 1992 has been established. An analysis is presented of this database and the results are compared with data from other tokamaks, such as the Axially Symmetric Divertor Experiment (ASDEX), Frascati Tokamak Upgrade (FTU) and Tore Supra. The trends of JET ohmic confinement appear to be similar to those observed on other tokamaks: a linear dependence of the global energy confinement time on density is observed up to a density value where a saturation is attained; this density value defines the border between the linear and the saturated ohmic confinement regimes; this border is shifted towards higher density values if the q value of the discharge is decreased; the global confinement time in the saturated ohmic regime increases less than linearly with the value of the magnetic field. (author). 20 refs, 13 figs, 4 tabs

Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

Science.gov (United States)

Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F.

2017-10-01

In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type implanted silicon carbide (4H-SiC) were studied employing different techniques. With increasing the annealing temperature, an improvement of the electrical properties of the contacts is highlighted, until an Ohmic behavior is obtained at 950 °C, with a specific contact resistance ρc = 2.3 × 10-4 Ω cm2. A considerable intermixing of the metal layers occurred upon annealing, as a consequence of the formation of different phases, both in the uppermost part of the stack (mainly Al3Ni2) and at the interface with SiC, where the formation of preferentially aligned TiC is observed. The formation of an Ohmic contact was associated with the occurrence of the reaction and the disorder at the interface, where the current transport is dominated by the thermionic field emission mechanism with a barrier height of 0.56 eV.

Ohmic ignition of Neo-Alcator tokamak with adiabatic compression

International Nuclear Information System (INIS)

Inoue, Nobuyuki; Ogawa, Yuichi

1992-01-01

Ohmic ignition condition on axis of the DT tokamak plasma heated by minor radius and major radius adiabatic compression is studied assuming parabolic profiles for plasma parameters, elliptic plasma cross section, and Neo-Alcator confinement scaling. It is noticeable that magnetic compression reduces the necessary total plasma current for Ohmic ignition device. Typically in compact ignition tokamak of the minor radius of 0.47 m, major radius of 1.5 m and on-axis toroidal field of 20 T, the plasma current of 6.8 MA is sufficient for compression plasma, while that of 11.7 MA is for no compression plasma. Another example with larger major radius is also described. In such a device the large flux swing of Ohmic transformer is available for long burn. Application of magnetic compression saves the flux swing and thereby extends the burn time. (author)

Apple snack enriched with L-arginine using vacuum impregnation/ohmic heating technology.

Science.gov (United States)

Moreno, Jorge; Echeverria, Julian; Silva, Andrea; Escudero, Andrea; Petzold, Guillermo; Mella, Karla; Escudero, Carlos

2017-07-01

Modern life has created a high demand for functional food, and in this context, emerging technologies such as vacuum impregnation and ohmic heating have been applied to generate functional foods. The aim of this research was to enrich the content of the semi-essential amino acid L-arginine in apple cubes using vacuum impregnation, conventional heating, and ohmic heating. Additionally, combined vacuum impregnation/conventional heating and vacuum impregnation/ohmic heating treatments were evaluated. The above treatments were applied at 30, 40 and 50  ℃ and combined with air-drying at 40 ℃ in order to obtain an apple snack rich in L-arginine. Both the impregnation kinetics of L-arginine and sample color were evaluated. The impregnated samples created using vacuum impregnation/ohmic heating at 50 ℃ presented a high content of L-arginine, an effect attributed primarily to electropermeabilization. Overall, vacuum impregnation/ohmic heating treatment at 50 ℃, followed by drying at 40 ℃, was the best process for obtaining an apple snack rich in L-arginine.

Energy confinement comparison of ohmically heated stellarators to tokamaks

International Nuclear Information System (INIS)

Chu, T.K.; Lee, Y.C.

1979-12-01

An empirical scaling prescribes that the energy confinement time in ohmically heated stellarators and tokamaks is proportional to the internal energy of the plasma and the minor radius, and inversely proportional to the current density. A thermal-conduction energy transport model, based on a heuristic assumption that the effective momentum transfer in the radial direction is proportional to the classical parallel momentum transfer which results in ohmic heating, is used to explain this scaling

Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

International Nuclear Information System (INIS)

Lotkhov, Sergey V

2013-01-01

In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage–current characteristics were measured at temperatures down to T ∼ 20 mK for films with sheet resistivities as high as ∼7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current. (paper)

Three-dimensional stellarator equilibrium as an ohmic steady state

International Nuclear Information System (INIS)

Park, W.; Monticello, D.A.; Strauss, H.; Manickam, J.

1985-07-01

A stable three-dimensional stellarator equilibrium can be obtained numerically by a time-dependent relaxation method using small values of dissipation. The final state is an ohmic steady state which approaches an ohmic equilibrium in the limit of small dissipation coefficients. We describe a method to speed up the relaxation process and a method to implement the B vector . del p = 0 condition. These methods are applied to obtain three-dimensional heliac equilibria using the reduced heliac equations

Ohmic Heating Assisted Lye Peeling of Pears.

Science.gov (United States)

Gupta, Sarvesh; Sastry, Sudhir K

2018-05-01

Currently, high concentrations (15% to 18%) of lye (sodium hydroxide) are used in peeling pears, constituting a wastewater handling and disposal problem for fruit processors. In this study, the effect of ohmic heating on lye peeling of pears was investigated. Pears were peeled using 0.5%, 1%, 2%, and 3% NaOH under different electric field strengths at two run times and their peeled yields were compared to that obtained at 2% and 18% NaOH with conventional heating. Results revealed that ohmic heating results in greater than 95% peeled yields and the best peel quality at much lower concentrations of lye (2% NaOH at 532 V/m and 3% NaOH at 426 and 479 V/m) than those obtained under conventional heating conditions. Treatment times of 30 and 60 s showed no significant differences. Within the studied range, the effects of increasing field strength yielded no significant additional benefits. These results confirm that the concentration of lye can be significantly lowered in the presence of ohmic heating to achieve high peeled yields and quality. Our work shows that lye concentrations can be greatly reduced while peeling pears, resulting in significant savings in use of caustic chemicals, reduced costs for effluent treatment and waste disposal. © 2018 Institute of Food Technologists®.

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

International Nuclear Information System (INIS)

Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

2013-01-01

The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

Effect of ohmic heating processing conditions on color stability of fungal pigments.

Science.gov (United States)

Aguilar-Machado, Diederich; Morales-Oyervides, Lourdes; Contreras-Esquivel, Juan C; Aguilar, Cristóbal; Méndez-Zavala, Alejandro; Raso, Javier; Montañez, Julio

2017-06-01

The aim of this work was to analyze the effect of ohmic heating processing conditions on the color stability of a red pigment extract produced by Penicillium purpurogenum GH2 suspended in a buffer solution (pH 6) and in a beverage model system (pH 4). Color stability of pigmented extract was evaluated in the range of 60-90 ℃. The degradation pattern of pigments was well described by the first-order (fractional conversion) and Bigelow model. Degradation rate constants ranged between 0.009 and 0.088 min -1 in systems evaluated. Significant differences in the rate constant values of the ohmic heating-treated samples in comparison with conventional thermal treatment suggested a possible effect of the oscillating electric field generated during ohmic heating. The thermodynamic analysis also indicated differences in the color degradation mechanism during ohmic heating specifically when the pigment was suspended in the beverage model system. In general, red pigments produced by P. purpurogenum GH2 presented good thermal stability under the range of the evaluated experimental conditions, showing potential future applications in pasteurized food matrices using ohmic heating treatment.

Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study

Science.gov (United States)

Radulescu, Fabian

2000-12-01

associated with each phase from the videotape recordings. With the exception of the Pd-GaAs interactions, it was found that four phase transformations occur during annealing of the Pd:Ge thin films on top of GaAs. The microstructural information was correlated with specific ohmic contact resistivity measurements performed in accordance with the transmission line method (TLM) and these results demonstrated that the Ge SPE growth on top of GaAs renders the optimal electrical properties for the contact. By using the focused ion beam (FIB) method to produce microcantilever beams, the residual stress present in the thin film system was studied in connection with the microstructure. Although, the PdGe/epi-Ge/GaAs seemed to be the optimal microstructural configuration, the presence of PdGe at the interface with GaAs did not damage the contact resistivity significantly. These results made it difficult to establish a charge transport mechanism across the interface but they explained the wide processing window associated with this contact.

Remarks on the thermal stability of an Ohmic-heated nanowire

Science.gov (United States)

Timsit, Roland S.

2018-05-01

The rise in temperature of a wire made from specific materials, due to ohmic heating by a DC electrical current, may lead to uncontrollable thermal runaway with ensuing melting. Thermal runaway stems from a steep decrease with increasing temperature of the thermal conductivity of the conducting material and subsequent trapping of the ohmic heat in the wire, i.e., from the inability of the wire to dissipate the heat sufficiently quickly by conduction to the cooler ends of the wire. In this paper, we show that the theory used to evaluate the temperature of contacting surfaces in a bulk electrical contact may be applied to calculate the conditions for thermal runaway in a nanowire. Implications of this effect for electrical contacts are addressed. A possible implication for memory devices using ohmic-heated nanofilms or nanowires is also discussed.

THREE-DIMENSIONAL ATMOSPHERIC CIRCULATION MODELS OF HD 189733b AND HD 209458b WITH CONSISTENT MAGNETIC DRAG AND OHMIC DISSIPATION

International Nuclear Information System (INIS)

Rauscher, Emily; Menou, Kristen

2013-01-01

We present the first three-dimensional circulation models for extrasolar gas giant atmospheres with geometrically and energetically consistent treatments of magnetic drag and ohmic dissipation. Atmospheric resistivities are continuously updated and calculated directly from the flow structure, strongly coupling the magnetic effects with the circulation pattern. We model the hot Jupiters HD 189733b (T eq ≈ 1200 K) and HD 209458b (T eq ≈ 1500 K) and test planetary magnetic field strengths from 0 to 30 G. We find that even at B = 3 G the atmospheric structure and circulation of HD 209458b are strongly influenced by magnetic effects, while the cooler HD 189733b remains largely unaffected, even in the case of B = 30 G and super-solar metallicities. Our models of HD 209458b indicate that magnetic effects can substantially slow down atmospheric winds, change circulation and temperature patterns, and alter observable properties. These models establish that longitudinal and latitudinal hot spot offsets, day-night flux contrasts, and planetary radius inflation are interrelated diagnostics of the magnetic induction process occurring in the atmospheres of hot Jupiters and other similarly forced exoplanets. Most of the ohmic heating occurs high in the atmosphere and on the dayside of the planet, while the heating at depth is strongly dependent on the internal heat flux assumed for the planet, with more heating when the deep atmosphere is hot. We compare the ohmic power at depth in our models, and estimates of the ohmic dissipation in the bulk interior (from general scaling laws), to evolutionary models that constrain the amount of heating necessary to explain the inflated radius of HD 209458b. Our results suggest that deep ohmic heating can successfully inflate the radius of HD 209458b for planetary magnetic field strengths of B ≥ 3-10 G.

Innovative food processing technology using ohmic heating and aseptic packaging for meat.

Science.gov (United States)

Ito, Ruri; Fukuoka, Mika; Hamada-Sato, Naoko

2014-02-01

Since the Tohoku earthquake, there is much interest in processed foods, which can be stored for long periods at room temperature. Retort heating is one of the main technologies employed for producing it. We developed the innovative food processing technology, which supersede retort, using ohmic heating and aseptic packaging. Electrical heating involves the application of alternating voltage to food. Compared with retort heating, which uses a heat transfer medium, ohmic heating allows for high heating efficiency and rapid heating. In this paper we ohmically heated chicken breast samples and conducted various tests on the heated samples. The measurement results of water content, IMP, and glutamic acid suggest that the quality of the ohmically heated samples was similar or superior to that of the retort-heated samples. Furthermore, based on the monitoring of these samples, it was observed that sample quality did not deteriorate during storage. © 2013. Published by Elsevier Ltd on behalf of The American Meat Science Association. All rights reserved.

Minimization of Ohmic losses for domain wall motion in ferromagnetic nanowires

Science.gov (United States)

Abanov, Artem; Tretiakov, Oleg; Liu, Yang

2011-03-01

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain wall velocity we find the time-dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic. This work was supported by the NSF Grant No. 0757992 and Welch Foundation (A-1678).

Ohmic Contacts to P-Type SiC

National Research Council Canada - National Science Library

Crofton, John

2000-01-01

Alloys of aluminum (Al) have previously been used as ohmic contacts to p-type SiC, however the characteristics and performance of these contacts is drastically affected by the type and composition of the Al alloy...

Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN

International Nuclear Information System (INIS)

Cao, X. A.; Piao, H.; LeBoeuf, S. F.; Li, J.; Lin, J. Y.; Jiang, H. X.

2006-01-01

The effects of surface treatment using Cl 2 /BCl 3 and Ar inductive coupled plasmas on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-type Al x Ga 1-x N (x=0-0.5) were investigated. Plasma treatment significantly increased the surface conductivity of GaN and Al 0.1 Ga 0.9 N, leading to improved Ohmic behaviors of the contacts. However, it reduced the surface doping level in Al x Ga 1-x N (x≥0.3) and degraded the contact properties. Following a 900-1000 deg. C anneal, the Ti/Al/Ti/Au contacts to Al x Ga 1-x N (x=0-0.3) became truly Ohmic, with specific contact resistances of (3-7)x10 -5 Ω cm 2 , whereas the contact to Al 0.5 Ga 0.5 N remained rectifying even without the plasma treatment. X-ray photoelectron spectroscopy measurements confirmed that the Fermi level moved toward the conduction band in GaN after the plasma treatment, but it was pinned by plasma-induced deep-level states in Al 0.5 Ga 0.5 N. This study emphasizes the need to mitigate plasma damage introduced during the mesa etch step for AlGaN-based deep-UV emitters and detectors

A thermal transport coefficient for ohmic and ICRF plasmas in alcator C-mode

International Nuclear Information System (INIS)

Daughton, W.; Coppi, B.; Greenwald, M.

1996-01-01

The energy confinement in plasmas produced by Alcator C-Mod machine is markedly different from that observed by previous high field compact machines such as Alcator A and C, FT, and more recently FTU. For ohmic plasmas at low and moderate densities, the confinement times routinely exceed those expected from the so-called open-quotes neo-Alcatorclose quotes scaling by a factor as high as three. For both ohmic and ICRF heated plasmas, the energy confinement time increases with the current and is approximately independent of the density. The similarity in the confinement between the ohmic and ICRF regimes opens the possibility that the thermal transport in Alcator C-Mod may be described by one transport coefficient for both regimes. We introduce a modified form of a transport coefficient previously used to describe ohmic plasmas in Alcator C-Mod. The coefficient is inspired by the properties of the so-called open-quotes ubiquitousclose quotes mode that can be excited in the presence of a significant fraction of trapped electrons and also includes the constraint of profile consistency. A detailed series of transport simulations are used to show that the proposed coefficient can reproduce the observed temperature profiles, loop voltage and energy confinement time for both ohmic and ICRF discharges. A total of nearly two dozen ohmic and ICRF Alcator C-Mod discharges have been fit over the range of parameter space available using this transport coefficient

Analysis of the ion energy transport in ohmic discharges in the ASDEX tokamak

International Nuclear Information System (INIS)

Simmet, E.E.; Fahrbach, H.U.; Herrmann, W.; Stroth, U.

1996-10-01

An analysis of the local ion energy transport is performed for more than one hundred well documented ohmic ASDEX discharges. These are characterized by three different confinement regimes: the linear ohmic confinement (LOC), the saturated ohmic confinement (SOC) and the improved ohmic confinement (IOC). All three are covered by this study. To identify the most important local transport mechanism of the ion heat, the ion power balance equation is analyzed. Two methods are used: straightforward calculation with experimental data only, and a comparison of measured and calculated profiles of the ion temperature and the ion heat conductivity, respectively. A discussion of the power balance shows that conductive losses dominate the ion energy transport in all ohmic discharges of ASDEX. Only inside the q=1-surface losses due to sawtooth activity play a role, while at the edge convective fluxes and CX-losses influence the ion energy transport. Both methods lead to the result that both the ion temperature and the ion heat conductivity are consistent with predictions of the neoclassical theory. Enhanced heat losses as suggested by theories eg. on the basis of η i modes can be excluded. (orig.)

Minimization of Ohmic Losses for Domain Wall Motion in a Ferromagnetic Nanowire

Science.gov (United States)

Tretiakov, O. A.; Liu, Y.; Abanov, Ar.

2010-11-01

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic.

Reducing the acidity of Arabica coffee beans by ohmic fermentation technology

Directory of Open Access Journals (Sweden)

Reta

2017-07-01

Full Text Available Coffee is widely consumed not only because of its typical taste, but coffee has antioxidant properties because of its polygons, and it stimulates brain performance. The main problem with the consumption of coffee is its content of caffeine. Caffeine when consumed in excess, can increase muscle tension, stimulate the heart, and increase the secretion of gastric acid. In this research, we applied ohmic fermentation technology, which is specially designed to mimic the stomach. Arabica coffee has high acidity that needs to be reduced than Luwak coffee, although it is cheaper. Hence, the ohmic technology with a time and temperature variation were applied to measure the total acidity of the coffee to determine optimum fermentation conditions. Results revealed that the total acidity of the coffee varied with fermentation conditions (0.18% – 0.73%. Generally, the longer the fermentation and the higher the temperature, the lower the total acidity. The acidity of the Luwak coffee through natural fermentation was 2.34%, which is substantially higher than the total acidity from the ohmic samples. Ohmic-based fermentation technology, therefore, offers improvements in coffee quality.

Design of TFTR movable limiter blades for ohmic and neutral-beam-heated plasmas

International Nuclear Information System (INIS)

Doll, D.W.; Ulrickson, M.A.; Cecchi, J.L.; Citrolo, J.C.; Weissenburger, D.; Bialek, J.

1981-10-01

A new set of movable limiter blades has been designed for TFTR that will meet both the requirements of the 4 MW ohmic heated and the 33 MW neutral beam heated plasmas. This is accomplished with three limiter blades each having and elliptical shape along the toroidal direction. Heat flux levels are acceptable for both ohmic heated and pre-strong compression plasmas. The construction consists of graphite tiles attached to cooled backing plates. The tiles have an average thickness of approx. 4.7 cm and are drawn against the backing plate with spring loaded fasteners that are keyed into the graphite. The cooled backing plate provides the structure for resisting disruption and fault induced loads. A set of rollers attached to the top and bottom blades allow them to be expanded and closed in order to vary the plasma surface for scaling experiments. Water cooling lines penetrate only the mid-plane port cover/support plate in such a way as to avoid bolted water connections inside the vacuum boundary and at the same time allow blade movement. Both the upper and lower blades are attached to the mid-plane limiter blade through pivots. Pivot connections are protected against arcing with an alumina coating and a shunt bar strap. Remote handling is considered throughout the design

A variational master equation approach to quantum dynamics with off-diagonal coupling in a sub-Ohmic environment

Energy Technology Data Exchange (ETDEWEB)

Sun, Ke-Wei [School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Fujihashi, Yuta; Ishizaki, Akihito [Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); Zhao, Yang, E-mail: YZhao@ntu.edu.sg [Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2016-05-28

A master equation approach based on an optimized polaron transformation is adopted for dynamics simulation with simultaneous diagonal and off-diagonal spin-boson coupling. Two types of bath spectral density functions are considered, the Ohmic and the sub-Ohmic. The off-diagonal coupling leads asymptotically to a thermal equilibrium with a nonzero population difference P{sub z}(t → ∞) ≠ 0, which implies localization of the system, and it also plays a role in restraining coherent dynamics for the sub-Ohmic case. Since the new method can extend to the stronger coupling regime, we can investigate the coherent-incoherent transition in the sub-Ohmic environment. Relevant phase diagrams are obtained for different temperatures. It is found that the sub-Ohmic environment allows coherent dynamics at a higher temperature than the Ohmic environment.

Power balance in an Ohmically heated fusion reactor

International Nuclear Information System (INIS)

Christiansen, J.P.; Roberts, K.V.

1982-01-01

A simplified power-balance equation (zero-dimensional model) is used to study the performance of an Ohmically heated fusion reactor with emphasis on a pulsed reversed-field pinch concept (RFP). The energy confinement time tausub(E) is treated as an adjustable function, and empirical tokamak scaling laws are employed in the numerical estimates, which are supplemented by 1-D ATHENE code calculations. The known heating rates and energy losses are represented by the net energy replacement time tausub(W), which is exhibited as a surface in density (n) and temperature (T) space with a saddle point (nsub(*), Tsub(*)), the optimum ignition point. It is concluded that i) ignition by Ohmic heating is more practicable for the RFP reactor than for a tokamak reactor with the same tausub(E), (ii) if at fixed current the minor radius can be reduced or at fixed minor radius the current can be increased, then it is found that Ohmic ignition becomes more likely when present tokamak scaling laws are used. More definitive estimates require, however, a knowledge of tausub(E), which can only be obtained by establishing a reliable set of experimental RFP scaling laws and, in particular, by extending RFP experiments closer to the reactor regime. (author)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

International Nuclear Information System (INIS)

Wang, H.T.; Tan, L.S.; Chor, E.F.

2007-01-01

Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 deg. C in flowing N 2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

Science.gov (United States)

Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

2004-05-01

In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

Ohmic discharges in Tore Supra - Marfes and detached plasmas

International Nuclear Information System (INIS)

Vallet, J.C.

1990-01-01

The Tore Supra plasma characteristics are given. The observed discharges are either leaning on the graphite inner first wall or limited by movable pump limiters located outboard and at the bottom of the vacuum chamber. The particular plasma conditions which lead to marfes and detached plasmas in ohmically heated He and D2 discharges limited by the inner wall are investigated. The results show that the ratio of radiated power to ohmic power increase linearly with M.g. As M.g rises, attached plasma, marfe and detached plasma are sequentially observed. Detached plasma with an effective radius as small as. 7 times the limiter radius was observed on Tore Supra

Metallization systems for stable ohmic contacts to GaAs

International Nuclear Information System (INIS)

Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

1986-01-01

A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

Ohmic metallization technology for wide band-gap semiconductors

International Nuclear Information System (INIS)

Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

2002-01-01

Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

Ohmic Heating Technology and Its Application in Meaty Food: A Review

OpenAIRE

Rishi Richa; N. C. Shahi; Anupama Singh; U. C. Lohani; P. K. Omre; Anil Kumar; T. K. Bhattacharya

2017-01-01

The purpose of the current review paper is to investigate and analyze about the effects of ohmic heating (OH) different application in the field of fish, meat and its product and compare it with other conventional thermal methods of food processing such as thawing, heating, cooking etc. Food quality, food safety, convenience, freshness, healthy food, natural flavor and taste with extended shelf-life are the main criteria for the demand made by today’s consumers. Ohmic heating is a substitute ...

Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n{sup +}-In{sub 0.53} Ga{sub 0.47}As

Energy Technology Data Exchange (ETDEWEB)

Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck; Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Rinus T. P. [SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203 (United States)

2014-10-28

Successful application of the silicide-like Ni{sub x}InGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n{sup +}- In{sub 0.53}Ga{sub 0.47}As (N{sub D} = 3 × 10{sup 19 }cm{sup −3}) with a specific contact resistance (ρ{sub c}) of 4.0 × 10{sup −8 }± 7 × 10{sup −9} Ω·cm{sup 2} and 4.6 × 10{sup −8 }± 9 × 10{sup −9} Ω·cm{sup 2}, respectively, after annealing at 350 °C for 60 s. With an ammonium sulfide pre-metallization surface treatment, ρ{sub c} is further reduced to 2.1 × 10{sup −8 }± 2 × 10{sup −9} Ω·cm{sup 2} and 1.8 × 10{sup −8 }± 1 × 10{sup −9} Ω·cm{sup 2} on epilayers with and without 10 nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.

Confinement requirements for OHMIC-compressive ignition of a Spheromak plasma

International Nuclear Information System (INIS)

Olson, R.; Gilligan, J.; Miley, G.

1980-01-01

The Moving Plasmoid Reactor (MPR) is an attractive alternative magnetic fusion scheme in which Spheromak plasmoids are envisioned to be formed, compressed, burned, and expanded as the plasmoids translate through a series of linear reactor modules. Although auxiliary heating of the plasmoids may be possible, the MPR scenario would be especially interesting if ohmic decay and compression along were sufficient to heat the plasmoids to an ignition temperature. In the present work, we will study the transport conditions under which a Spheromak plasmoid could be expected to reach ignition via a combination of ohmic and compression heating

Confinement requirements for ohmic-compressive ignition of a Spheromak plasma

International Nuclear Information System (INIS)

Olson, R.E.; Miley, G.H.

1981-01-01

The Moving Plasmoid Reactor (MPR) is an attractive alternative magnetic fusion scheme in which Spheromak plasmoids are envisioned to be formed, compressed, burned, and expanded as the plasmoids translate through a series of linear reactor modules. Although auxiliary heating of the plasmoids may be possible, the MPR scenario would be especially interesting if ohmic decay and compression alone is sufficient to heat the plasmoids to an ignition temperature. In the present work, we examine the transport conditions under which a Spheromak plasmoid can be expected to reach ignition via a combination of ohmic and compression heating

Energy confinement scaling in tokamaks: some implications of recent experiments with ohmic and strong auxiliary heating

International Nuclear Information System (INIS)

Goldston, R.J.

1984-02-01

Recent results from confinement scaling experiments on tokamaks with ohmic and strong auxiliary heating are reviewed. An attempt is made to draw these results together into a low-density ohmic confinement scaling law, and a scaling law for confinement with auxiliary heating. The auxiliary heating confinement law may also serve to explain the saturation in tau/sub E/ vs anti n/sub e/ observed in some ohmic heating density scaling experiments

Flexible carbon-based ohmic contacts for organic transistors

Science.gov (United States)

Brandon, Erik (Inventor)

2007-01-01

The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer composite material for ohmic contacts (i.e. drain and source).

Impurity toroidal rotation and transport in Alcator C-Mod ohmic high confinement mode plasmas

International Nuclear Information System (INIS)

Rice, J. E.; Goetz, J. A.; Granetz, R. S.; Greenwald, M. J.; Hubbard, A. E.; Hutchinson, I. H.; Marmar, E. S.; Mossessian, D.; Pedersen, T. Sunn; Snipes, J. A.

2000-01-01

Central toroidal rotation and impurity transport coefficients have been determined in Alcator C-Mod [I. H. Hutchinson et al., Phys. Plasmas 1, 1511 (1994)] Ohmic high confinement mode (H-mode) plasmas from observations of x-ray emission following impurity injection. Rotation velocities up to 3x10 4 m/sec in the co-current direction have been observed in the center of the best Ohmic H-mode plasmas. Purely ohmic H-mode plasmas display many characteristics similar to ion cyclotron range of frequencies (ICRF) heated H-mode plasmas, including the scaling of the rotation velocity with plasma parameters and the formation of edge pedestals in the electron density and temperature profiles. Very long impurity confinement times (∼1 sec) are seen in edge localized mode-free (ELM-free) Ohmic H-modes and the inward impurity convection velocity profile has been determined to be close to the calculated neoclassical profile. (c) 2000 American Institute of Physics

Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation

International Nuclear Information System (INIS)

Liliental-Weber, Z.; Gronsky, R.; Washburn, J.; Newman, N.; Spicer, W.E.; Weber, E.R.

1986-01-01

We report here a systematic study which uses electrical device measurements and transmission electron microscopy (TEM) methods to investigate the electrical, morphological, and structural properties of Au/GaAs Schottky diodes. The electrical characteristics of Au diodes formed on atomically clean and air-exposed GaAs(110) surfaces are found to change from rectifying to Ohmic behavior after annealing above the Au--Ga eutectic temperature (360 0 C). This change is shown to be due to an Ohmic-like contact at the periphery of the device. TEM studies of these structures indicate that the Ohmic peripheral current pathway can be correlated with the formation of near surface Ga-rich Au crystallites at the diode circumference upon annealing. Further evidence of the correlation of the Ohmic electrical characteristics with the morphology of the periphery comes from data which indicate that the removal of these Au crystallites by mesa etching is also accompanied with the elimination of the Ohmic current. The morphology of the overlayer was found to depend strongly on annealing and surface treatment. TEM indicates that the interface is flat and abrupt for all unannealed diodes, as well as for annealed diodes formed on atomically clean surfaces. For annealed diodes formed on the air-exposed surfaces, the metal--semiconductor interface contains large metallic protrusions extending up to several hundred angstroms into the semiconductor. For comparison to practical structures, the morphology of annealed diodes formed using typical commercial processing technology [i.e., formed on chemically prepared (100) surfaces annealed in forming gas] was also investigated using TEM. The interface for these structures is more complex than interfaces formed on the atomically clean and air-exposed cleaved (110) surfaces

Laminar forced convection in a cylindrical collinear ohmic sterilizer

Directory of Open Access Journals (Sweden)

Pesso Tommaso

2017-01-01

Full Text Available The present work deals with a thermo-fluid analysis of a collinear cylindrical ohmic heater in laminar flow. The geometry of interest is a circular electrically insulated glass pipe with two electrodes at the pipe ends. For this application, since the electrical conductivity of a liquid food depends strongly on the temperature, the thermal analysis of an ohmic heater requires the simultaneous solution of the electric and thermal fields. In the present work the analysis involves decoupling the previous fields by means of an iterative procedure. The thermal field has been calculated using an analytical solution, which leads to fast calculations for the temperature distribution in the heater. Some considerations of practical interest for the design are also given.

Improvement of Ohmic contacts on Ga₂O₃ through use of ITO-interlayers

Energy Technology Data Exchange (ETDEWEB)

Carey, Patrick H. [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Yang, Jiancheng [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Ren, Fan [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Hays, David C. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Pearton, Stephen J. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Kuramata, Akito [Tamura Corporation, Sayama (Japan). Japan and Novel Crystal Technology, Inc.; Kravchenko, Ivan I. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

2017-10-03

In this work, the use of ITO interlayers between Ga₂O₃ and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga₂O₃ stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10^-5 Ω cm² were achieved after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga₂O₃ is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

TNS superconducting ohmic-heating system

International Nuclear Information System (INIS)

Wang, S.T.; Fuja, R.; Kim, S.H.; Kustom, R.L.; Praeg, W.F.; Thompson, K.; Turner, L.R.

1978-01-01

The superconducting ohmic-heating (OH) system is the selected design for the General Atomics Co./Argonne National Laboratory TNS tokamak design studies. The key features of the OH system design are: (1) parallel coil connection, (2) better utilization of flux core by embedding support cylinder of the toroidal-field coil within the OH inner radius, (3) independent trim coils for correcting the stray fields, (4) low-loss high-current cryostable cable design and (5) OH coil cycling circuit using a reversing bridge. Detailed designs are presented

Effects of the ohmic current on collective scattering spectra

International Nuclear Information System (INIS)

Castiglioni, S.; Lontano, M.; Tartari, U.

1993-01-01

A numerical and analytical study of the modifications induced in the collective scattering spectra by the ohmic current governing the equilibrium magnetic configuration in toroidal plasmas is presented. The spectral density function is calculated assuming equilibrium distributions for the (bulk and impurity) ion species and a Spitzer-like distribution to describe the response of the electrons to the applied DC electric field. As expected, the spectral asymmetries can be non-negligibly enhanced in the region of the ion-acoustic frequency. They reach their maxima for tangential scattering geometries, where the magnetic effects on the spectra are negligible. This justifies the assumption of the non-magnetized spectra. A theoretically motivated potential is shown to exist for a more detailed experimental investigation of the feasibility of current-density measurements in ohmic plasmas, based on collective scattering. (author)

Pasteurization of citrus juices with ohmic heating to preserve the carotenoid profile

OpenAIRE

Achir , Nawel; Dhuique-Mayer , Claudie; Hadjal , Thiziri; Madani , Khodir; Pain , Jean-Pierre; Dornier , Manuel

2016-01-01

International audience; This study was carried out to assess, for the first time, the effect of ohmic heating on the carotenoid profile of two citrus fruit juices: grapefruit and blood orange. Two heat treatments were designed to obtain pasteurization values of 50 and 150 min (Tref= 70°C and z-value=10°C) with ohmic heating as compared to conventional heating. The results showed that xanthophyll losses could reach 70% for epoxyxanthophylls (cis-violaxanthin and cis-antheraxanthin) and 40% for...

Transport analysis of ohmic, L-mode and improved confinement discharges in FTU

Energy Technology Data Exchange (ETDEWEB)

Esposito, B [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Marinucci, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Romanelli, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Bracco, G [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Castaldo, C [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Cocilovo, V [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Giovannozzi, E [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Leigheb, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Monari, G [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Nowak, S [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Sozzi, C [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Tudisco, O [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Cesario, R [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Frigione, D [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Gormezano, C [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Granucci, G [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Panaccione, L [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Pericoli-Ridolfini, V [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Pieroni, L [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy)

2004-11-01

A thorough investigation of confinement in Frascati Tokamak Upgrade has been carried out on a new database of ohmic, L-mode and advanced scenario discharges (multiple pellet-fuelled, radiation improved and internal transport barriers (ITBs)) obtained with the available auxiliary heating systems, namely electron cyclotron resonant heating, lower hybrid and ion Bernstein wave. A general agreement of the measured {tau}{sub E} with ITER97 L-mode scaling is found in ohmic and L-mode discharges. An improvement of the energy confinement time ({tau}{sub E}) of up to about 60% over the ITER97 L-mode scaling has been obtained in ITB discharges, together with a reduction in local electron transport in the region of high pressure gradient, and up to about 30% in pellet-fuelled discharges (where {tau}{sub E} as large as {approx}120 ms have been reached). The linear density dependence of {tau}{sub E} in ohmic discharges has been found to extend above the saturation density threshold in pellet-fuelled plasmas.

Transport and turbulence in TORE SUPRA ohmic discharges

International Nuclear Information System (INIS)

Garbet, X.; Payan, J.; Laviron, C.; Devynck, P.; Saha, S.K.; Capes, H.; Chen, X.P.; Coulon, J.P.; Gil, C.; Harris, G.; Hutter, T.; Pecquet, A.L.

1992-01-01

The mechanisms underlying the energy confinement behaviour in ohmic tokamak discharges are not yet understood. It is well known that the confinement time increases with the average density and saturates above a critical value of the density, but several explanations exist for this saturation. The present study is an analysis of a set of ohmic discharges in Tore Supra with I p =1.6 MA, B=4 T, R=2.35 m and a=0.78 m, where the average density was increased from 0.9 to 4.2 10 19 m -3 . For these plasma parameters, the energy confinement time given by magnetic measurements saturates for e > ≥ 2.5 10 19 m -3 . It is emphasized here that the onset of ionic turbulence is unlikely in Tore Supra. This conclusion relies on a transport analysis and turbulence measurements by CO 2 laser scattering, whose results are presented in this paper

Effects of Ohmic Heating on Microbial Counts and Denaturatiuon of Proteins in Milk

OpenAIRE

SUN, Huixian; KAWAMURA, Shuso; HIMOTO, Jun-ichi; ITOH, Kazuhiko; WADA, Tatsuhiko; KIMURA, Toshinori

2008-01-01

The aim of this study was to compare the inactivation effects of ohmic heating (internal heating by electric current) and conventional heating (external heating by hot water) on viable aerobes and Streptococcus thermophilus 2646 in milk under identical temperature history conditions. The effects of the two treatments on quality of milk were also compared by assessing degrees of protein denaturation in raw and sterilized milk (raw milk being sterilized by ohmic heating or conventional heating)...

Theoretical scaling law for ohmically heated tokamaks

International Nuclear Information System (INIS)

Minardi, E.

1981-06-01

The electrostatic drift instability arising from the reduction of shear damping, due to toroidal effects, is assumed to be the basic source of the anomalous electron transport in tokamaks. The Maxwellian population of electrons constitutes a medium whose adiabatic nonlinear reaction to the instability (described in terms of an effective dielectric constant of the medium) determines the stationary electrostatic fluctuation level in marginally unstable situations. The existence of a random electrostatic potenial implies a fluctuating current of the Maxwellian electrons which creates a random magnetic field and a stocasticization of a magnetic configuration. The application of recent results allows the calculation of the realted radial electron transport. It is found that the confinement time under stationary ohmic conditions scales as n Tsub(i)sup( - 1/2) and is proportional roughly to the cube of the geometric dimenisions. Moreover, it is deduced that the loop voltage is approximateley the same for all tokamaks, irrespective of temperature and density and to a large extent, also of geometrical conditions. Thes results are characteristic of the ohmic stationary regime and can hardly be extrapolated to order heating regimes. (orig.)

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

Science.gov (United States)

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

The ohmic heating power supply for HL-1 tokamak

International Nuclear Information System (INIS)

Mingrui, Z.; Jiashun, C.

1986-01-01

A combination of capacitor banks, inductor and DC Fly wheel-Generator sets are used as ohmic heating power supply (OHPS) for HL-1, which is the largest tokamak in China. This system can give changeable waveform of current in a simple way, because of the use of protection for capacitor banks by changeable connection in easy way. Since the technology of forced zero current in the commutating breaker and synchronous self-triggering crowbar are used, the smooth conversion between the wave front provided by discharge of the capacitor banks and the flat top sustained by the inductor and flywheel realized. The performance of the system was tested by a dummy load and the system has been used in the HL-1 experiments. It is confirmed that this system is sufficiently available for the ohmic heating and has important effects on the long plasma lasting time on the order of 1 sec

Investigation of the density turbulence in ohmic ASDEX plasmas

International Nuclear Information System (INIS)

Dodel, G.; Holtzhauer, E.

1989-01-01

A 119 μm homodyne laser scattering experiment is used on ASDEX to investigate wavenumber and frequency of the density fluctuations occuring in the different operational conditions of the machine. The changes of the density turbulence caused by additional heating are of primary interest with regard to a possible correlation to anomalous transport. Therefore, in the current experiment particular emphasis is placed on these investigations. On the other hand it is the ohmic phase which constitutes the least complicated physical situation in a tokamak and is therefore best suited to reveal the basic physical nature of the density turbulence. In the following we present a summary of our findings in the ohmic phase and make an attempt to compare these findings with what would be expected from the simplest model of density-gradient-driven driftwave turbulence saturated at the mixing-length level. (author) 3 refs., 4 figs

Investigation of the density turbulence in ohmic ASDEX plasmas

Energy Technology Data Exchange (ETDEWEB)

Dodel, G; Holtzhauer, E [Stuttgart Univ. (Germany, F.R.). Inst. fuer Plasmaforschung; Giannone, L.; Niedermeyer, H [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany, F.R.)

1989-01-01

A 119 {mu}m homodyne laser scattering experiment is used on ASDEX to investigate wavenumber and frequency of the density fluctuations occuring in the different operational conditions of the machine. The changes of the density turbulence caused by additional heating are of primary interest with regard to a possible correlation to anomalous transport. Therefore, in the current experiment particular emphasis is placed on these investigations. On the other hand it is the ohmic phase which constitutes the least complicated physical situation in a tokamak and is therefore best suited to reveal the basic physical nature of the density turbulence. In the following we present a summary of our findings in the ohmic phase and make an attempt to compare these findings with what would be expected from the simplest model of density-gradient-driven driftwave turbulence saturated at the mixing-length level. (author) 3 refs., 4 figs.

Parametric studies in ohmically heated plasmas in Heliotron E

International Nuclear Information System (INIS)

Mutoh, T.; Besshou, S.; Ijiri, Y.

1983-01-01

Parametric studies of volume averaged electron temperature and global electron energy confinement time /tau/epsilon /SUB e/ of ohmically heated Heliotron E plasmas have been performed using a data acquisition computer system. The scaling laws α (I /SUB OH/ x B/n /SUB e/) /SUP 1/2/ and /tau/epsilon /SUB e/ α n /SUP -1/2/ /SUB e/ x B/I /SUP 3/2/ /SUB OH/ are obtained directly by a code which fits the exponents of the plasma parameters ponents of the plasma parameters to the electron temperature and confinement time. The ohmically heated plasma confinement time /tau/epsilon /SUB e/ is shown to be related to the drift parameters xi (= V /SUB De/ /V /SUB Te/). The dependences of the energy confinement time on other plasma parameters is also presented. An investigation is made of the correlation between MHD activity and the confinement

Facet formation and ohmic contacts for laser diodes on non- and semipolar GaN

Energy Technology Data Exchange (ETDEWEB)

Rass, Jens; Ploch, Simon; Vogt, Patrick [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Wernicke, Tim; Redaelli, Luca; Einfeldt, Sven [Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany)

2009-07-01

Group-III-Nitride heterostructures grown on nonpolar and semipolar planes allow the realization of highly efficient devices such as laser diodes and LEDs due to the reduction or elimination of the quantum confined Stark effect. However, the realization of these devices poses a number of challenges, in particular the formation of smooth laser facets and the fabrication of ohmic contacts. In this talk optimized schemes for facet formation and contact resistance reduction for nitride based devices on non- and semipolar planes are presented, and various concepts are discussed. We discuss a laser scribing process that allows the cleaving of facets along the c- and a-plane for devices grown on nonpolar substrates. For semipolar planes there is no low-index cleavage plane in order to form resonators along the projection of the c-axis. Therefore we have investigated etching techniques in order to produce flat facets perpendicular to the plane of growth. For the challenging formation of p-type contacts to GaN we discuss different methods such as chemical treatments, different metallization schemes and capping layers to reduce the contact resistivity.

Modelling of Ohmic discharges in ADITYA tokamak using the Tokamak Simulation Code

International Nuclear Information System (INIS)

Bandyopadhyay, I; Ahmed, S M; Atrey, P K; Bhatt, S B; Bhattacharya, R; Chaudhury, M B; Deshpande, S P; Gupta, C N; Jha, R; Joisa, Y Shankar; Kumar, Vinay; Manchanda, R; Raju, D; Rao, C V S; Vasu, P

2004-01-01

Several Ohmic discharges of the ADITYA tokamak are simulated using the Tokamak Simulation Code (TSC), similar to that done earlier for the TFTR tokamak. Unlike TFTR, the dominant radiation process in ADITYA is through impurity line radiation. TSC can follow the experimental plasma current and position to very good accuracy. The thermal transport model of TSC including impurity line radiation gives a good match of the simulated results with experimental data for the Ohmic flux consumption, electron temperature and Z eff . Even the simulated magnetic probe signals are in reasonably good agreement with the experimental values

Modelling of Ohmic discharges in ADITYA tokamak using the Tokamak Simulation Code

Energy Technology Data Exchange (ETDEWEB)

Bandyopadhyay, I; Ahmed, S M; Atrey, P K; Bhatt, S B; Bhattacharya, R; Chaudhury, M B; Deshpande, S P; Gupta, C N; Jha, R; Joisa, Y Shankar; Kumar, Vinay; Manchanda, R; Raju, D; Rao, C V S; Vasu, P [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

2004-09-01

Several Ohmic discharges of the ADITYA tokamak are simulated using the Tokamak Simulation Code (TSC), similar to that done earlier for the TFTR tokamak. Unlike TFTR, the dominant radiation process in ADITYA is through impurity line radiation. TSC can follow the experimental plasma current and position to very good accuracy. The thermal transport model of TSC including impurity line radiation gives a good match of the simulated results with experimental data for the Ohmic flux consumption, electron temperature and Z{sub eff}. Even the simulated magnetic probe signals are in reasonably good agreement with the experimental values.

The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

Science.gov (United States)

Oh, Min-Suk

2018-04-01

We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

Internal transport barrier and β limit in ohmically heated plasma in TUMAN-3M

International Nuclear Information System (INIS)

Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.

2001-01-01

An Internal Transport Barrier (ITB) was found in ohmically heated plasma in TUMAN-3M (R 0 =53 cm, a l =22 cm - circular limiter configuration, B t ≤0.7T, I p ≤175 kA, ≤6.0·10 19 m -3 ). The barrier reveals itself as a formation of a steep gradient on electron temperature and density radial profiles. The regions with reduced diffusion and electron thermal diffusivity are in between r=0.5a and r=0.7a. The ITB appears more frequently in the shots with higher plasma current. At lower currents (I p N limit in the ohmically heated plasma are presented. Stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with the fast Current Ramp-Down in the ohmic H-mode. Maximum value of β T of 2.0 % and β N of 2 were achieved. The β N limit achieved is 'soft' (nondisruptive) limit. The stored energy slowly decays after the Current Ramp-Down. No correlation was found between beta restriction and MHD phenomena. (author)

Internal transport barrier and β limit in ohmically heated plasma in TUMAN-3M

International Nuclear Information System (INIS)

Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.

1999-01-01

An Internal Transport Barrier (ITB) was found in ohmically heated plasma in TUMAN-3M (R 0 = 53 cm, a l = 22 cm - circular limiter configuration, B t ≤ 0.7 T, I p ≤ 175 kA, ≤ 6.0·10 19 m -3 ). The barrier reveals itself as a formation of a steep gradient on electron temperature and density radial profiles. The regions with reduced diffusion and electron thermal diffusivity are in between r = 0.5a and r = 0.7a. The ITB appears more frequently in the shots with higher plasma current. At lower currents (I p N limit in the ohmically heated plasma are presented. Stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with the fast Current Ramp-Down in the ohmic H-mode. Maximum value of β T of 2.0% and β N of 2 were achieved. The β N limit achieved is 'soft' (non-disruptive) limit. The stored energy slowly decays after the Current Ramp-Down. No correlation was found between beta restriction and MHD phenomena. (author)

Ohmic H-mode and confinement in TCV

International Nuclear Information System (INIS)

Moret, J.M.; Anton, M.; Barry, S.

1995-01-01

The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied, has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1-0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence or absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ≅1.6) in long H-modes (1.5 s). (author) 9 figs., 9 refs

Energy balance in the ohmically heated FT

International Nuclear Information System (INIS)

Bartiromo, R.; Brusati, M.; Cilloco, F.

1981-01-01

A typical discharge in the FT Tokamak at 60 kG has been studied in detail in order to derive the power balance between the ohmic input and the plasma losses. Impurity and radiation losses together with ion and electron energy balance are discussed. A power transport term for electrons is derived which is ascribed to anomalous thermal conduction. This resulting thermal transport is compared with those derived from different proposed scalings

Effect of indirect ohmic heating on quality of ready-to-eat pineapple packed in plastic pouch

Directory of Open Access Journals (Sweden)

Hoang Pham

2014-06-01

Full Text Available Ready-to-eat fruits packed in sealed containers are highly perishable due to their intrinsic characteristics and lack of full thermal process. Ohmic heating has the advantages of rapid liquid heating through electrical current. The aim of this research was to investigate the effect of indirect ohmic heating on pH, total soluble solids, polyphenol oxidase activity, color and texture of ready-to-eat pineapple packed in a polypropylene pouch with 1% calcium chloride and 0.3% ascorbic acid packing solution. The pre-packed sample in a pouch was placed in the ohmic heating jar filled with 0.5% sodium chloride ohmic heating solution which was then ohmic heated at different voltage gradients (20, 30, 40 V/cm, to different packing solution temperatures (60, 70, 80°C for 60s. Samples were kept at 4°C for quality measurement. It was found that browning index of ready-to-eat pineapple treated with 20 V/cm at 80°C, 30 V/cm at 70°C and 80°C, 40 V/cm at 80°C did not change during 12 days cold storage (p>0.05. Polyphenol oxidase was inactivated when the temperature of the pineapple was 62°C or higher. After 10 days at 4°C, the pineapple heated with 30 V/cm at 70°C had much higher firmness than the un-heated sample kept at the same storage condition. Indirect ohmic heating of pre-packed ready-to-eat pineapple in polypropylene pouch with 30 V/cm at 70°C packing solution temperature for 60s could be used as minimal heating methods to maintain the quality of ready-to-eat fruits in 12 days at 4°C.

Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)

Energy Technology Data Exchange (ETDEWEB)

Shin, Jeong-Hun; Jung, Hyun-Wook [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-02-14

In this paper, Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64 is presented, which is formed at 500 °C by inserting IGZO between metal (Ni) and GaSb. The resulting Ohmic contact is systematically investigated by TOF-SIMS, HSC chemistry simulation, XPS, TEM, AFM, and J–V measurements. Two main factors contributing to the Ohmic contact formation are (1) InSb (or InGaSb) with narrow energy bandgap (providing low electron and hole barrier heights) formed by In diffusion from IGZO and Sb released by Ga oxidation, and (2) free Sb working as traps that induces tunneling current. - Highlights: • We demonstrate Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64. • The reverse current is increased by low electron barrier height and high TAT current. • The low electron barrier height is achieved by the formation of InGaSb. • Free Sb atoms also work as traps inducing high TAT current.

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

Energy Technology Data Exchange (ETDEWEB)

Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw; Yang, Cheng-Yi [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Lee, Fang-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsin-Chu 300, Taiwan (China); Huang, Hao-Ping [Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan (China)

2015-10-21

This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

Directory of Open Access Journals (Sweden)

Ye Tian

2012-03-01

Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

Effect of ohmic heating of soymilk on urease inactivation and kinetic analysis in holding time.

Science.gov (United States)

Li, Fa-De; Chen, Chen; Ren, Jie; Wang, Ranran; Wu, Peng

2015-02-01

To verify the effect of the ohmic heating on the urease activity in the soymilk, the ohmic heating methods with the different electrical field conditions (the frequency and the voltage ranging from 50 to 10 kHz and from 160 to 220 V, respectively) were employed. The results showed that if the value of the urease activity measured with the quantitative spectrophotometry method was lower than 16.8 IU, the urease activity measured with the qualitative method was negative. The urease activity of the sample ohmically heated was significantly lower than that of the sample conventionally heated (P urease inactivation. In addition, the inactivation kinetics of the urease in the soymilk could be described with a biphasic model during holding time at a target temperature. Thus, it was concluded that the urease in the soymilk would contain 2 isoenzymes, one is the thermolabile fraction, the other the thermostable fraction, and that the thermostable isoenzyme could not be completely inactivated when the holding time increased, whether the soymilk was cooked with the conventional method or with the ohmic heating method. Therefore, the electric field had no effect on the inactivation of the thermostable isoenzyme of the urease. © 2015 Institute of Food Technologists®

Low ohmic multilayer contacts in lead-tin-telluride diode lasers

International Nuclear Information System (INIS)

Herrmann, K.; Sumpf, B.; Boehme, D.; Hannemann, M.

1983-01-01

The preparation and the influence of low ohmic multilayer thin film contacts of lead-salt homo- and heterolasers on the degradation of lasing parameters during recycling processes between low working temperatures and room temperatures storage are described and discussed in detail. (author)

Ohmic Treatment of Pear Purées (cv. ‘Conference’ in Terms of Some Quality Related Attributes

Directory of Open Access Journals (Sweden)

Oana Viorela NISTOR

2015-06-01

Full Text Available The effect of ohmic treatment on some quality related characteristics of pear purée (cv. ‘Conference’ such as color, reducing sugars, total phenols, rheological behavior and microbial counts, was analyzed. The inactivation kinetics of pectin methyl esterase (PME in pear crude extract and purée were studied by conventional thermal and ohmic treatments. Thermal inactivation of PME in crude extract was described by a first-order kinetic model. The activation energy values suggested the presence of two isoenzymes with different thermostability. The ohmic heating reduced PME activity by 96% at 25 V·cm-1. Minimal changes induced by ohmic heating on above quality related aspects were observed. Supporting this statement, there were no significant changes in the nutritional and sensorial attributes. It was reported an increase of 3% of reducing sugar content for the ohmic heated samples. The phenolic content of the treated samples registered a reduction of 59% in comparison with fresh pear purée. The pear purée presented a non-Newtonian pseudoplastic behaviour. The Ostwald de Waele model was fitted to rheograms and the consistency coefficient (m and flow behavior index (n were determined. Results obtained for the microbial charge were higher in the control samples. Thus, microbial counts showed complete inactivation of yeast and mold at voltage gradient higher than 17.5 V·cm-1.

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

OpenAIRE

Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

2008-01-01

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

Ohmic H-mode and confinement in TCV

International Nuclear Information System (INIS)

Moret, J.-M.; Anton, M.; Barry, S.

1995-01-01

The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied (κ = 1.3 - 1.9, δ 0.1 - 0.7) has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1 - 0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence of absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ∼ 1.6) in long H-modes (1.5 s). (Author)

Influence of infrared final cooking on color, texture and cooking characteristics of ohmically pre-cooked meatball.

Science.gov (United States)

Yildiz Turp, Gulen; Icier, Filiz; Kor, Gamze

2016-04-01

The objective of the current study was to improve the quality characteristics of ohmically pre-cooked beef meatballs via infrared cooking as a final stage. Samples were pre-cooked in a specially designed-continuous type ohmic cooker at a voltage gradient of 15.26 V/cm for 92 s. Infrared cooking was then applied to the pre-cooked samples at different combinations of heat fluxes (3.706, 5.678, and 8.475 kW/m(2)), application distances (10.5, 13.5, and 16.5 cm) and application durations (4, 8, and 12min). Effects of these parameters on color, texture and cooking characteristics of ohmically pre-cooked beef meatballs were investigated. The appearance of ohmically pre-cooked meatball samples was improved via infrared heating. A dark brown layer desired in cooked meatballs formed on the surface of the meatballs with lowest application distance (10.5 cm) and longest application duration (12 min). The texture of the samples was also improved with these parameters. However the cooking yield of the samples decreased at the longest application duration of infrared heating. Copyright © 2015 Elsevier Ltd. All rights reserved.

Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

Science.gov (United States)

MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

2012-11-27

We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

Optimized design of polarizers with low ohmic loss and any polarization state for the 28 GHz QUEST ECH/ECCD system

Energy Technology Data Exchange (ETDEWEB)

Tsujimura, Toru Ii, E-mail: tsujimura.tohru@nifs.ac.jp [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki 509-5292 (Japan); Idei, Hiroshi [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan); Kubo, Shin; Kobayashi, Sakuji [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki 509-5292 (Japan)

2017-01-15

Highlights: • Ohmic loss was calculated on the grooved mirror surface in simulated polarizers. • Polarizers with a low ohmic loss feature were optimally designed for 28 GHz. • Smooth rounded-rectangular grooves were made by mechanical machining. • The designed polarizers can realize all polarization states. - Abstract: In a high-power long-pulse millimeter-wave transmission line for electron cyclotron heating and current drive (ECH/ECCD), the ohmic loss on the grooved mirror surface of polarizers is one of the important issues for reducing the transmission loss. In this paper, the ohmic loss on the mirror surface is evaluated in simulated real-scale polarizer miter bends for different groove parameters under a linearly-polarized incident wave excitation. The polarizers with low ohmic loss are optimally designed for a new 28 GHz transmission line on the QUEST spherical tokamak. The calculated optimum ohmic loss is restricted to only less than 1.5 times as large as the theoretical loss for a copper flat mirror at room temperature. The copper rounded-rectangular grooves of the polarizers were relatively easy to make smooth in mechanical machining and the resultant surface roughness was not more than 0.15 μm, which is only 0.38 times as large as the skin depth. The combination of the designed elliptical polarizer and the polarization rotator can also realize any polarization state of the reflected wave.

Noncontact sheet resistance measurement technique for wafer inspection

Science.gov (United States)

Kempa, Krzysztof; Rommel, J. Martin; Litovsky, Roman; Becla, Peter; Lojek, Bohumil; Bryson, Frank; Blake, Julian

1995-12-01

A new technique, MICROTHERM, has been developed for noncontact sheet resistance measurements of semiconductor wafers. It is based on the application of microwave energy to the wafer, and simultaneous detection of the infrared radiation resulting from ohmic heating. The pattern of the emitted radiation corresponds to the sheet resistance distribution across the wafer. This method is nondestructive, noncontact, and allows for measurements of very small areas (several square microns) of the wafer.

Compound sawtooth study in ohmically heated TFTR plasmas

International Nuclear Information System (INIS)

Yamada, H.; McGuire, K.; Colchin, D.

1985-09-01

Compound sawtooth activity has been observed in ohmically heated, high current, high density TFTR plasmas. Commonly called ''double sawteeth,'' such sequences consist of a repetitive series of subordinate relaxations followed by a main relaxation with a different inversion radius. The period of such compound sawteeth can be as long as 100 msec. In other cases, however, no compound sawteeth or bursts of them can be observed in discharges with essentially the same parameters

Space chamber experiments of ohmic heating by high power microwave from the solar power satellite

Energy Technology Data Exchange (ETDEWEB)

Kaya, N.; Matsumoto, H.

1981-12-01

It is quantitatively predicted that a high power microwave from the Solar Power Satellite (SPS) nonlinearly interacts with the ionospheric plasma. The possible nonlinear interactions are ohmic heating, self-focusing and parametric instabilities. A rocket experiment called MINIX (Microwave-Ionosphere Nonlinear Interaction Experiment) has been attempted to examine these effects, but is note reported here. In parallel to the rocket experiment, a laboratory experiment in a space plasma simulation chamber has been carried out in order to examine ohmic heating in detail and to develop a system of the rocket experiment. Interesting results were observed and these results were utilized to revise the system of the rocket experiments. A significant microwave heating of plasma up to 150% temperature increase was observed with little electron density decrease. It was shown that the temperature increase is not due to the RF breakdown but to the ohmic heating in the simulated ionospheric plasma. These microwave effects have to be taken into account in the SPS Project in the future.

An investigation on the application of ohmic heating of cold water shrimp and brine mixtures

DEFF Research Database (Denmark)

Pedersen, Søren Juhl; Feyissa, Aberham Hailu; Brøkner Kavli, Sissel Therese

2016-01-01

Cooking is an important unit-operation in the production of cooked and peeled shrimps. The present study explores the feasibility of using ohmic heating for cooking of shrimps. The focus is on investigating the effects of different process parameters on heating time and quality of ohmic cooked...... shrimps (Pandalus Borelias). The shrimps were heated to a core temperature of 72 °C in a brine solution using a small batch ohmic heater. Three experiments were performed: 1) a comparative analyses of the temperature development between different sizes of shrimps and thickness (head and tail region...... of the shrimp) over varying salt concentrations (10 kg m−3 to 20 kg m−3) and electric field strengths (1150 V m−1 to 1725 V m−1) with the heating time as the response; 2) a 2 level factorial experiment for screening the impact of processing conditions using electric field strengths of 1250 V m−1 and 1580 V m−1...

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

2016-07-25

Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

International Nuclear Information System (INIS)

Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

2013-01-01

Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

Science.gov (United States)

Hou, Minmin; Senesky, Debbie G.

2014-08-01

The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10-5 Ω-cm2. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.

Physicochemical properties of masa and corn tortilla made by ohmic ...

African Journals Online (AJOL)

Instant corn flour obtained by ohmic heating (OHICF) was used to prepare masa and tortillas. In this study, the effect of average particle size, moisture, and the final temperature on the physicochemical properties of masa and tortillas elaborated from OHICF was evaluated and were compared with flour obtained by the ...

Resistivity switching properties of Li-doped ZnO films deposited on LaB_6 electrode

International Nuclear Information System (INIS)

Igityan, A.; Kafadaryan, Y.; Aghamalyan, N.; Petrosyan, S.; Badalyan, G.; Vardanyan, V.; Nersisyan, M.; Hovsepyan, R.; Palagushkin, A.; Kryzhanovsky, B.

2015-01-01

Current–voltage (I–V) characteristics of Al/p-ZnO:Li/LaB_6 device, measured in voltage sweep mode, show unipolar resistive switching and monostable threshold switching (URS and MTS) for different bias voltage polarities. URS could be transformed to MTS by application of reverse bias voltage. With increasing number of cycles, URS is converted to bipolar resistive switching mode which is lost after certain number of cycles, and device turns into an ordinary resistor. Analysis of linear fitting I–V curves suggests that ohmic and space charge limited current laws are responsible for conductivity mechanism of Al/p-ZnO:Li/LaB_6 device. - Highlights: • Al/p-ZnO:Li/LaB_6 memristive device is fabricated using an e-beam evaporation technique. • Current–voltage (I–V) characteristics are studied. • Type of resistive switching mode depends on the bias voltage polarity and number of switching cycles. • Resistive switching in Al/ZnO:Li/LaB_6 has an interfacial effect. • Ohmic and SCLC laws are responsible for conductivity mechanism of resistive states.

Radial profiles of neutron emission from ohmic discharges in JET

International Nuclear Information System (INIS)

Cheetham, A.; Gottardi, N.; Jarvis, O.N.

1989-01-01

Neutron emission profiles from several ohmically heated discharges have been studied using a variety of analytical techniques to extract the ion temperature profiles which are found to agree well, both in shape and magnitude, with the electron temperature profiles as measured by the LIDAR Thomson scattering diagnostic. (author) 7 refs., 3 figs

Real-time protection of the Ohmic heating coil force limits in DIII-D

International Nuclear Information System (INIS)

Broesch, J.D.; Scoville, J.T.; Hyatt, A.W.; Coon, R.M.

1997-11-01

The maximum safe operating limits of the DIII-D tokamak are determined by the force produced in the ohmic heating coil and the toroidal field coil during a plasma pulse. This force is directly proportional to the product of the current in the coils. Historically, the current limits for each coil were set statically before each pulse without regard for the time varying nature of the currents. In order to allow the full time-dependent capability of the ohmic coil to be used, a system was developed for monitoring the product of the currents dynamically and making appropriate adjustments in real time. This paper discusses the purpose, implementation, and results of this work

Mathematical model of solid food pasteurization by ohmic heating: influence of process parameters.

Science.gov (United States)

Marra, Francesco

2014-01-01

Pasteurization of a solid food undergoing ohmic heating has been analysed by means of a mathematical model, involving the simultaneous solution of Laplace's equation, which describes the distribution of electrical potential within a food, the heat transfer equation, using a source term involving the displacement of electrical potential, the kinetics of inactivation of microorganisms likely to be contaminating the product. In the model, thermophysical and electrical properties as function of temperature are used. Previous works have shown the occurrence of heat loss from food products to the external environment during ohmic heating. The current model predicts that, when temperature gradients are established in the proximity of the outer ohmic cell surface, more cold areas are present at junctions of electrodes with lateral sample surface. For these reasons, colder external shells are the critical areas to be monitored, instead of internal points (typically geometrical center) as in classical pure conductive heat transfer. Analysis is carried out in order to understand the influence of pasteurisation process parameters on this temperature distribution. A successful model helps to improve understanding of these processing phenomenon, which in turn will help to reduce the magnitude of the temperature differential within the product and ultimately provide a more uniformly pasteurized product.

A numerical simulation model of valence-change-based resistive switching

OpenAIRE

Marchewka, Astrid

2017-01-01

Due to their superior scalability and performance, nanoscale resistive switches based on the valence-change mechanism are considered promising candidates for future nonvolatile memory and logic applications. These devices are metal-oxide-metal structures that can be reversibly switched between different resistance states by electrical signals. Typically, they contain one Schottky-like and one ohmic-like metal-oxide contact and exhibit bipolar switching. The switching mechanism and the initial...

INCORPORATING AMBIPOLAR AND OHMIC DIFFUSION IN THE AMR MHD CODE RAMSES

International Nuclear Information System (INIS)

Masson, J.; Mulet-Marquis, C.; Chabrier, G.; Teyssier, R.; Hennebelle, P.

2012-01-01

We have implemented non-ideal magnetohydrodynamics (MHD) effects in the adaptive mesh refinement code RAMSES, namely, ambipolar diffusion and Ohmic dissipation, as additional source terms in the ideal MHD equations. We describe in details how we have discretized these terms using the adaptive Cartesian mesh, and how the time step is diminished with respect to the ideal case, in order to perform a stable time integration. We have performed a large suite of test runs, featuring the Barenblatt diffusion test, the Ohmic diffusion test, the C-shock test, and the Alfvén wave test. For the latter, we have performed a careful truncation error analysis to estimate the magnitude of the numerical diffusion induced by our Godunov scheme, allowing us to estimate the spatial resolution that is required to address non-ideal MHD effects reliably. We show that our scheme is second-order accurate, and is therefore ideally suited to study non-ideal MHD effects in the context of star formation and molecular cloud dynamics.

Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

NARCIS (Netherlands)

Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

2014-01-01

For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact

Investigation of the Energy Confinement in Ohmic and LHCD Plasmas in HT-7

International Nuclear Information System (INIS)

Zhang Xiaoqing; Wan Baonian; Shen Biao; Hu Xiwei; Qian Jinping; Fan Hengyu; Ding Yonghua

2006-01-01

Investigation of the energy confinement in ohmic and lower hybrid current drive (LHCD) plasmas in HT-7 has been performed. In ohmic discharges at low densities the global energy confinement time τ E increases almost linearly with the density, saturates at a critical density (2.5 x 10 13 /cm 3 for HT-7) and is nearly constant at higher densities. The energy confinement time is in good agreement with the Neo-Alcator scaling law at different densities and currents. In the LHCD plasmas the global energy confinement time similar to that of the L-mode discharges has been observed to be in good agreement with the low confinement mode (L mode) scaling law of ITER89-P in higher electron density and plasma current

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

Science.gov (United States)

Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

2018-04-01

In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

Science.gov (United States)

Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

2018-03-01

Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

Experimental study of the β-limit in ohmic H-mode in the TUMAN-3M tokamak

International Nuclear Information System (INIS)

Lebedev, S.V.; Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Krikunov, S.V.; Levin, L.S.; Rozhdestvensky, V.V.; Tukachinsky, A.S.; Yaroshevich, S.P.

1998-01-01

Because of its high confinement properties, the H-mode provides good opportunities to achieve high beta values in a tokamak. In this paper the results of an experimental study of β T and β N limits in the H-mode, obtained in a circular cross section tokamak without auxiliary heating are presented. The experiments were performed in the TUMAN-3M tokamak. The device has the following parameters: R 0 =0.53m, a s =0.22m (limiter configuration), B T ≤1.2T, I p ≤175kA, n-bar e ≤6.2x10 19 m -3 . The stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with fast current ramp-down in ohmic H-mode. A maximum value of β T of 2.0% and β N of 2.0 were achieved. The β N limit achieved reveals itself as a 'soft' (non-disruptive) limit. The stored energy slowly decays after the current ramp-down. No correlation was found between beta restriction and MHD phenomena. Internal transport barrier (ITB) formation was observed in ohmic H-mode. An enhancement factor of 2.0 over ITER93H(ELM-free) was found in the ohmic H-mode with ITB. (author)

Quantitative comparison of electron temperature fluctuations to nonlinear gyrokinetic simulations in C-Mod Ohmic L-mode discharges

Energy Technology Data Exchange (ETDEWEB)

Sung, C., E-mail: csung@physics.ucla.edu [University of California, Los Angeles, Los Angeles, California 90095 (United States); White, A. E.; Greenwald, M.; Howard, N. T. [Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Mikkelsen, D. R.; Churchill, R. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Holland, C. [University of California, San Diego, La Jolla, California 92093 (United States); Theiler, C. [Ecole Polytechnique Fédérale de Lausanne, SPC, Lausanne 1015 (Switzerland)

2016-04-15

Long wavelength turbulent electron temperature fluctuations (k{sub y}ρ{sub s} < 0.3) are measured in the outer core region (r/a > 0.8) of Ohmic L-mode plasmas at Alcator C-Mod [E. S. Marmar et al., Nucl. Fusion 49, 104014 (2009)] with a correlation electron cyclotron emission diagnostic. The relative amplitude and frequency spectrum of the fluctuations are compared quantitatively with nonlinear gyrokinetic simulations using the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] in two different confinement regimes: linear Ohmic confinement (LOC) regime and saturated Ohmic confinement (SOC) regime. When comparing experiment with nonlinear simulations, it is found that local, electrostatic ion-scale simulations (k{sub y}ρ{sub s} ≲ 1.7) performed at r/a ∼ 0.85 reproduce the experimental ion heat flux levels, electron temperature fluctuation levels, and frequency spectra within experimental error bars. In contrast, the electron heat flux is robustly under-predicted and cannot be recovered by using scans of the simulation inputs within error bars or by using global simulations. If both the ion heat flux and the measured temperature fluctuations are attributed predominantly to long-wavelength turbulence, then under-prediction of electron heat flux strongly suggests that electron scale turbulence is important for transport in C-Mod Ohmic L-mode discharges. In addition, no evidence is found from linear or nonlinear simulations for a clear transition from trapped electron mode to ion temperature gradient turbulence across the LOC/SOC transition, and also there is no evidence in these Ohmic L-mode plasmas of the “Transport Shortfall” [C. Holland et al., Phys. Plasmas 16, 052301 (2009)].

Graphene in ohmic contact for both n-GaN and p-GaN

Energy Technology Data Exchange (ETDEWEB)

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

Science.gov (United States)

Cui, Xu

MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

Kinetics of Maillard reactions in model infant formula during UHT treatment using a static batch ohmic heater

OpenAIRE

Roux , Stéphanie; Courel , Mathilde; Ait-Ameur , Lamia; Birlouez-Aragon , Inès; Pain , Jean-Pierre

2009-01-01

The impact of a UHT treatment on a model infant formula was examined by assessing the advancement of Maillard reactions during a thermal treatment by ohmic heating. The heating and holding steps of the heat treatment were carried out in a static batch ohmic heater equipped with a nitrogen counter-pressure system, allowing reaching five temperature levels from 100 to 140 °C. A heat treatment was characterized by monitoring a holding time at a given temperature. Samples were taken during heatin...

Alternate ohmic heating coil arrangements for compact tokamak

International Nuclear Information System (INIS)

Dawson, J.W.; Moretti, A.; Stevens, H.C.; Thompson, K.

1978-01-01

The results for a number of ohmic heating (OH) coil arrangements which will allow the reduction of the major radius of Experimental Power Reactor (EPR) tokamaks will be given. In each case the results are compared, at least indirectly, to the reference case, which has the OH solenoid inside the central core of the reactor. The goal for the alternate geometries studied was to stay within the requirements imposed by the EPR conditions on the plasma and to produce as much or more OH V-s as the reference case

Laser-annealed GaP OHMIC contacts for high-temperature devices

International Nuclear Information System (INIS)

Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

1980-01-01

The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

International Nuclear Information System (INIS)

Hu, C.Y.; Qin, Z.X.; Feng, Z.X.; Chen, Z.Z.; Ding, Z.B.; Yang, Z.J.; Yu, T.J.; Hu, X.D.; Yao, S.D.; Zhang, G.Y.

2006-01-01

The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450 deg. C. At the same time, the O diffuses to the metal-semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c ) at 450 deg. C. At 500 deg. C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600 deg. C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly

Sawtooth-free Ohmic discharges in ASDEX and the aspects of neoclassical ion transport

International Nuclear Information System (INIS)

Stroth, U.; Fussmann, G.; Krieger, K.; Mertens, V.; Wagner, F.; Bessenrodt-Weberpals, M.; Buechse, R.; Giannone, L.; Herrmann, H.; Simmet, E.; Steuer, K.H.

1991-05-01

Sawtooth-free Ohmic discharges can serve as a model case for a quiescent Tokamak plasma. We report on the properties and the global parameters of these discharges observed in ASDEX and make comments on the mechanism which seems to be responsible for the stabilization of the sawtooth instability. Stationary Ohmic discharge were used to investigate particle, impurity and energy transport in the absence of the sawtooth instability. Particular emphasis has been devoted to a comparison with the predictions of neoclassical theories. We find that the ion energy transport is on the level predicted by neoclassical theory and can explain particle and impurity transport with neoclassical inward drift velocities and diffusion coefficients with the same small anomalous contribution. In the central region of the plasma, where the power flux is low, very small values were found for the electron heat conductivity. (orig.)

Dynamics of the sub-Ohmic spin-boson model: A time-dependent variational study

International Nuclear Information System (INIS)

Wu Ning; Duan Liwei; Zhao Yang; Li Xin

2013-01-01

The Dirac-Frenkel time-dependent variation is employed to probe the dynamics of the zero temperature sub-Ohmic spin-boson model with strong friction utilizing the Davydov D 1 ansatz. It is shown that initial conditions of the phonon bath have considerable influence on the dynamics. Counterintuitively, even in the very strong coupling regime, quantum coherence features still manage to survive under the polarized bath initial condition, while such features are absent under the factorized bath initial condition. In addition, a coherent-incoherent transition is found at a critical coupling strength α≈ 0.1 for s= 0.25 under the factorized bath initial condition. We quantify how faithfully our ansatz follows the Schrödinger equation, finding that the time-dependent variational approach is robust for strong dissipation and deep sub-Ohmic baths (s≪ 1).

EPR ohmic heating energy storage

International Nuclear Information System (INIS)

Heck, F.M.; Stillwagon, R.E.; King, E.I.

1977-01-01

The Ohmic Heating (OH) Systems for all the Experimental Power Reactor (EPR) designs to date have all used temporary energy storage to assist in providing the OH current charge required to build up the plasma current. The energies involved (0.8 x 10 9 J to 1.9 x 10 9 J) are so large as to make capacitor storage impractical. Two alternative approaches are homopolar dc generators and ac generators. Either of these can be designed for pulse duty and can be made to function in a manner similar to a capacitor in the OH circuit and are therefore potential temporary energy storage devices for OH systems for large tokamaks. This study compared total OH system costs using homopolar and ac generators to determine their relative merits. The total system costs were not significantly different for either type of machine. The added flexibility and the lower maintenance of the ac machine system make it the more attractive approach

Effects of nanoscale coatings on reliability of MEMS ohmic contact switches

Science.gov (United States)

Tremper, Amber Leigh

also increases the dependence on force. This thesis also details that the relative contribution of contact resistance to the total measured resistance can be maximized by decreasing the probe spacing and tip radius. AFM testing of the layered systems showed that the coated samples had larger predicted plane strain moduli than the Au sample, in contrast to the nanoindentation testing. Thus, when the contact depth was kept sufficiently small, the contact stiffness increased as predicted by substrate models. When the contact depth was on the order of the coating thickness, the contact stiffness actually decreased. Additionally, the forceseparation plots showed that the Ru and Pt surfaces either accumulated large amounts of contamination or were less susceptible to being wiped clean than the Au film. Further, scratch testing of the Au film and Ru and Pt coatings show that the hard surface coatings reduce material removal and contact wear. Ultra-thin Ru and Pt surface coatings on Au films are shown to be improved material systems for ohmic contact switches. The wear is reduced for coated materials, while the resistance and power consumption through the coating are not significantly affected.

Simulation of thermal reset transitions in resistive switching memories including quantum effects

Energy Technology Data Exchange (ETDEWEB)

Villena, M. A.; Jiménez-Molinos, F.; Roldán, J. B. [Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada (Spain); González, M. B.; Campabadal, F. [Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra (Spain); Suñé, J.; Miranda, E. [Departament d' Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra Cerdanyola del Vallès 08193 (Spain); Romera, E. [Departamento de Física Atómica, Molecular y Nuclear and Instituto Carlos I de Física Teórica y Computacional, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada (Spain)

2014-06-07

An in-depth study of reset processes in RRAMs (Resistive Random Access Memories) based on Ni/HfO{sub 2}/Si-n{sup +} structures has been performed. To do so, we have developed a physically based simulator where both ohmic and tunneling based conduction regimes are considered along with the thermal description of the devices. The devices under study have been successfully fabricated and measured. The experimental data are correctly reproduced with the simulator for devices with a single conductive filament as well as for devices including several conductive filaments. The contribution of each conduction regime has been explained as well as the operation regimes where these ohmic and tunneling conduction processes dominate.

Influence of infrared final cooking on polycyclic aromatic hydrocarbon formation in ohmically pre-cooked beef meatballs.

Science.gov (United States)

Kendirci, Perihan; Icier, Filiz; Kor, Gamze; Onogur, Tomris Altug

2014-06-01

Effects of infrared cooking on polycyclic aromatic hydrocarbon (PAH) formation in ohmically pre-cooked beef meatballs were investigated. Samples were pre-cooked in a specially designed-continuous type ohmic cooking at a voltage gradient of 15.26V/cm for 92s. Infrared cooking was applied as a final cooking method at different combinations of heat fluxes (3.706, 5.678, 8.475kW/m(2)), application distances (10.5, 13.5, 16.5cm) and application durations (4, 8, 12min). PAHs were analyzed by using high performance liquid chromatography (HPLC) equipped with a fluorescence detector. The total PAH levels were detected to be between 4.47 and 64μg/kg. Benzo[a] pyrene (B[a]P) and PAH4 (sum of B[a]P, chrysene (Chr), benzo[a]anthracene (B[a]A) and benzo[b]fluoranthene (B[b]F)) levels detected in meatballs were below the EC limits. Ohmic pre-cooking followed by infrared cooking may be regarded as a safe cooking procedure of meatballs from a PAH contamination point of view. Copyright © 2014 Elsevier Ltd. All rights reserved.

A new method for the compensation of ohmic drop in galvanic cells

NARCIS (Netherlands)

Kooijman, D.J.; Sluyters, J.H.

Generally the ohmic potential drop in a galvanic cell that occurs if a rectangular pulse is led through the cell, is compensated by means of a well-known bridge circuit. A better method making use of a phase reverter is described and its features are discussed. Exchange current densities up to 1200

Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures.

Science.gov (United States)

Zheng, Changxi; Zhang, Qianhui; Weber, Bent; Ilatikhameneh, Hesameddin; Chen, Fan; Sahasrabudhe, Harshad; Rahman, Rajib; Li, Shiqiang; Chen, Zhen; Hellerstedt, Jack; Zhang, Yupeng; Duan, Wen Hui; Bao, Qiaoliang; Fuhrer, Michael S

2017-03-28

Large-area two-dimensional (2D) heterojunctions are promising building blocks of 2D circuits. Understanding their intriguing electrostatics is pivotal but largely hindered by the lack of direct observations. Here graphene-WS 2 heterojunctions are prepared over large areas using a seedless ambient-pressure chemical vapor deposition technique. Kelvin probe force microscopy, photoluminescence spectroscopy, and scanning tunneling microscopy characterize the doping in graphene-WS 2 heterojunctions as-grown on sapphire and transferred to SiO 2 with and without thermal annealing. Both p-n and n-n junctions are observed, and a flat-band condition (zero Schottky barrier height) is found for lightly n-doped WS 2 , promising low-resistance ohmic contacts. This indicates a more favorable band alignment for graphene-WS 2 than has been predicted, likely explaining the low barriers observed in transport experiments on similar heterojunctions. Electrostatic modeling demonstrates that the large depletion width of the graphene-WS 2 junction reflects the electrostatics of the one-dimensional junction between two-dimensional materials.

Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

Science.gov (United States)

Lee, S.-K.; Zetterling, C.-M.; Ostling, M.

2002-07-01

We report on the microscopic mapping of specific contact resistances (rhoc) and long-term reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type epilayers of 4H-silicon carbide. The TiW ohmic contacts showed good uniformity with low contact resistivity of 3.3 x10-5 Omega cm2. Microscopic mapping of the rhoc showed that the rhoc had a distribution that decreased from the center to the edge of the wafer. This distribution of the rhoc is caused by variation of the doping concentration of the wafer. Sacrificial oxidation at high temperature partially recovered inductively coupled plasma etch damage. TiW contacts with platinum and gold capping layers have stable specific contact resistance at 500 and 600 degC in a vacuum chamber for 308 h.

Scaling theory of quantum resistance distributions in disordered systems

International Nuclear Information System (INIS)

Jayannavar, A.M.

1991-01-01

The large scale distribution of quantum Ohmic resistance of a disorderd one-dimensional conductor is derived explicitly. It is shown that in the thermodynamic limit this distribution is characterized by two independent parameters for strong disorder, leading to a two-parameter scaling theory of localization. Only in the limit of weak disorder single parameter scaling consistent with existing theoretical treatments is recovered. (author). 33 refs., 4 figs

Scaling theory of quantum resistance distributions in disordered systems

International Nuclear Information System (INIS)

Jayannavar, A.M.

1990-05-01

We have derived explicitly, the large scale distribution of quantum Ohmic resistance of a disordered one-dimensional conductor. We show that in the thermodynamic limit this distribution is characterized by two independent parameters for strong disorder, leading to a two-parameter scaling theory of localization. Only in the limit of weak disorder we recover single parameter scaling, consistent with existing theoretical treatments. (author). 32 refs, 4 figs

Field and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress method

OpenAIRE

Eriguchi, Koji; Wei, Zhiqiang; Takagi, Takeshi; Ohta, Hiroaki; Ono, Kouichi

2009-01-01

Constant voltage stress (CVS) was applied to Fe–O films prepared by a sputtering process to investigate a stress-induced resistance increase leading to a fundamental mechanism for switching behaviors. Under the CVS, an abrupt resistance increase was found for both stress polarities. A conduction mechanism after the resistance increase exhibited non-Ohmic transport. The time-to-resistance increase (tr) under the CVS was revealed to strongly depend on stress voltage as well as the polarity. Fro...

Low resistivity contacts to YBa2Cu3O(7-x) superconductors

Science.gov (United States)

Hsi, Chi-Shiung; Haertling, Gene H.

1991-01-01

Silver, gold, platinum, and palladium metals were investigated as electroding materials for the YBa2Cu3O(7-x) superconductors. Painting, embedding, and melting techniques were used to apply the electrodes. Contact resistivities were determined by: (1) type of electrode; (2) firing conditions; and (3) application method. Electrodes fired for long times exhibited lower contact resistivities than those fired for short times. Low-resistivity contacts were found for silver and gold electrodes. Silver, which made good ohmic contact to the YBa2Cu3O(7-x) superconductor with low contact resistivities was found to be the best electroding material among the materials evaluated in this investigation.

Stability, bistability and instability of amorphous ZrO2 resistive memory devices

International Nuclear Information System (INIS)

Parreira, P; Paterson, G W; McVitie, S; MacLaren, D A

2016-01-01

Amorphous zirconium oxide thin films deposited at room temperature, sandwiched between Pt and Ti electrodes, show resistive bipolar resistive switching with good overall performance figures (retention, ON/OFF ratio and durability). A variability observed during electrical characterisation is consistent with the coexistence of two different resistive switching mechanisms within the ZrO 2 layer. Electron energy loss spectroscopy is used to map chemical variations across the device on the nanoscale. Partial oxidation of the Ti electrode creates an ohmic contact with zirconia and injects positively charged oxygen vacancies into the zirconia layer that are then responsible for resistive switching at the Pt / zirconia interface. (paper)

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

International Nuclear Information System (INIS)

Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

2016-01-01

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li 0.06 Zn 0.94 O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li + ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

DEFF Research Database (Denmark)

Boturchuk, Ievgen; Scheffler, Leopold Julian; Larsen, Arne Nylandsted

2018-01-01

Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing...... to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects...

Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

KAUST Repository

Bahabry, Rabab R

2018-01-11

The Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.

Effect of milk fat content on the performance of ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica Serovar Typhimurium and Listeria monocytogenes.

Science.gov (United States)

Kim, S-S; Kang, D-H

2015-08-01

The effect of milk fat content on ohmic heating compared to conventional heating for inactivation of food-borne pathogens was investigated. Sterile cream was mixed with sterile buffered peptone water and adjusted to 0, 3, 7, 10% (w/v) milk fat content. These samples with varying fat content were subjected to ohmic and conventional heating. The effect of milk fat on temperature increase and electrical conductivity were investigated. Also, the protective effect of milk fat on the inactivation of foodborne pathogens was studied. For conventional heating, temperatures of samples increased with time and were not significantly (P > 0.05) different regardless of fat content. Although the inactivation rate of Escherichia coli O157:H7, Salmonella Typhimurium and L. monocytogens decreased in samples of 10% fat content, a protective effect was not observed for conventional heating. In contrast with conventional heating, ohmic heating was significantly affected by milk fat content. Temperature increased more rapidly with lower fat content for ohmic heating due to higher electrical conductivity. Nonuniform heat generation of nonhomogeneous fat-containing samples was verified using a thermal infrared camera. Also, the protective effect of milk fat on E. coli O157:H7 and Listeria monocytogenes was observed in samples subjected to ohmic heating. These results indicate that food-borne pathogens can survive in nonhomogeneous fat-containing foods subjected to ohmic heating. Therefore, more attention is needed regarding ohmic heating than conventional heating for pasteurizing fat-containing foods. The importance of adequate pasteurization for high milk fat containing foods was identified. © 2015 The Society for Applied Microbiology.

Observations of core toroidal rotation reversals in Alcator C-Mod ohmic L-mode plasmas

International Nuclear Information System (INIS)

Rice, J.E.; Reinke, M.L.; Podpaly, Y.A.; Churchill, R.M.; Cziegler, I.; Dominguez, A.; Ennever, P.C.; Fiore, C.L.; Granetz, R.S.; Greenwald, M.J.; Hubbard, A.E.; Hughes, J.W.; Irby, J.H.; Ma, Y.; Marmar, E.S.; McDermott, R.M.; Porkolab, M.; Duval, B.P.; Bortolon, A.; Diamond, P.H.

2011-01-01

Direction reversals of intrinsic toroidal rotation have been observed in Alcator C-Mod ohmic L-mode plasmas following modest electron density or toroidal magnetic field ramps. The reversal process occurs in the plasma interior, inside of the q = 3/2 surface. For low density plasmas, the rotation is in the co-current direction, and can reverse to the counter-current direction following an increase in the electron density above a certain threshold. Reversals from the co- to counter-current direction are correlated with a sharp decrease in density fluctuations with k R ≥ 2 cm -1 and with frequencies above 70 kHz. The density at which the rotation reverses increases linearly with plasma current, and decreases with increasing magnetic field. There is a strong correlation between the reversal density and the density at which the global ohmic L-mode energy confinement changes from the linear to the saturated regime.

Modeling electrochemical resistance with coal surface properties in a direct carbon fuel cell based on molten carbonate

Science.gov (United States)

Eom, Seongyong; Ahn, Seongyool; Kang, Kijoong; Choi, Gyungmin

2017-12-01

In this study, a numerical model of activation and ohmic polarization is modified, taking into account the correlation function between surface properties and inner resistance. To investigate the correlation function, the surface properties of coal are changed by acid treatment, and the correlations between the inner resistance measured by half-cell tests and the surface characteristics are analyzed. A comparison between the model and experimental results demonstrates that the absolute average deviations for each fuel are less than 10%. The numerical results show that the sensitivities of the coal surface properties affecting polarization losses change depending on the operating temperature. The surface oxygen concentrations affect the activation polarization and the sensitivity decreased with increasing temperature. The surface ash of coal is an additional index to be considered along with ohmic polarization and it has the greatest effect on the surface properties at 973 K.

Effect of Boronization on Ohmic Plasmas in NSTX

International Nuclear Information System (INIS)

Skinner, C.H.; Kugel, H.; Maingi, R.; Wampler, W.R.; Blanchard, W.; Bell, M.; Bell, R.; LeBlanc, B.; Gates, D.; Kaye, S.; LaMarche, P.; Menard, J.; Mueller, D.; Na, H.K.; Nishino, N.; Paul, S.; Sabbagh, S.; Soukhanovskii, V.

2001-01-01

Boronization of the National Spherical Torus Experiment (NSTX) has enabled access to higher density, higher confinement plasmas. A glow discharge with 4 mTorr helium and 10% deuterated trimethyl boron deposited 1.7 g of boron on the plasma facing surfaces. Ion beam analysis of witness coupons showed a B+C areal density of 10 to the 18 (B+C) cm to the -2 corresponding to a film thickness of 100 nm. Subsequent ohmic discharges showed oxygen emission lines reduced by x15, carbon emission reduced by two and copper reduced to undetectable levels. After boronization, the plasma current flattop time increased by 70% enabling access to higher density, higher confinement plasmas

An ohmic heating circuit for the CASTOR tokamak

International Nuclear Information System (INIS)

Valovic, M.

1989-07-01

To extend the duration of the CASTOR tokamak discharge to the limit given by the toroidal magnetic field pulse, a simple ohmic heating circuit is proposed. It exploits two condenser banks charged to different voltages and switched by means of an ignitron switch. The circuit parameters are chosen so as to achieve optimum current ramp-up and flat-top phases. The choice of parameters was checked using a simple computer code, with the nonlinear magnetization of the transformer core being taken into account. The results of calculation are compared with those of an experimental test shot with a discharge current and duration of 19 kA and 40 ms, respectively. (J.U.). 3 figs., 4 refs

Decoherence plus spontaneous symmetry breakdown generate the ''ohmic'' view of the state-vector collapse

International Nuclear Information System (INIS)

Ne'eman, Y.; Univ. of Texas, Austin, TX

1993-06-01

The collapse of the state-vector is described as a phase transition due to three features. First, there is the atrophying of indeterminacy for macroscopic objects -- including the measurement apparatus. Secondly, there is the environment decohering mechanism, as described by Zeh, Joos and others -- dominant in macroscopic objects. As a result, the classical background, an input in the Copenhagen prescriptions, is generated as an ''effective'' picture, similar to the ''effective'' introduction of Ohmic resistance or of thermodynamical variables, when going from the micro to the macroscopic; in this case, the collectivized substrate is provided by the multiplicity of photon scatterings, etc., on top of the effect of the large number of particles in macroscopic objects. Thirdly, there is the Everett ''branching'', i.e. the materialization of one of the now decoherent states, accompanied by the destruction of the other branches. By definition, quantum indeterminancy represents a symmetry; in a measurement, or in a branching, this symmetry is broken ''spontaneously'', involving a Ginzburg-Landau type potential with asymmetric minima, thus concretizing the quantum ''dice'' without the burden of ''many worlds''. The authors review and systematize the various phase transitions relating quantum to classical phenomena

Intermittent fluctuations in the Alcator C-Mod scrape-off layer for ohmic and high confinement mode plasmas

Science.gov (United States)

Garcia, O. E.; Kube, R.; Theodorsen, A.; LaBombard, B.; Terry, J. L.

2018-05-01

Plasma fluctuations in the scrape-off layer of the Alcator C-Mod tokamak in ohmic and high confinement modes have been analyzed using gas puff imaging data. In all cases investigated, the time series of emission from a single spatially resolved view into the gas puff are dominated by large-amplitude bursts, attributed to blob-like filament structures moving radially outwards and poloidally. There is a remarkable similarity of the fluctuation statistics in ohmic plasmas and in edge localized mode-free and enhanced D-alpha high confinement mode plasmas. Conditionally averaged waveforms have a two-sided exponential shape with comparable temporal scales and asymmetry, while the burst amplitudes and the waiting times between them are exponentially distributed. The probability density functions and the frequency power spectral densities are similar for all these confinement modes. These results provide strong evidence in support of a stochastic model describing the plasma fluctuations in the scrape-off layer as a super-position of uncorrelated exponential pulses. Predictions of this model are in excellent agreement with experimental measurements in both ohmic and high confinement mode plasmas. The stochastic model thus provides a valuable tool for predicting fluctuation-induced plasma-wall interactions in magnetically confined fusion plasmas.

Reducing the acidity of Arabica coffee beans by ohmic fermentation technology

OpenAIRE

Reta; Mursalim; Salengke; Junaedi, M.; Mariati; Sopade, P.

2017-01-01

Coffee is widely consumed not only because of its typical taste, but coffee has antioxidant properties because of its polygons, and it stimulates brain performance. The main problem with the consumption of coffee is its content of caffeine. Caffeine when consumed in excess, can increase muscle tension, stimulate the heart, and increase the secretion of gastric acid. In this research, we applied ohmic fermentation technology, which is specially designed to mimic the stomach. Arabica coffee has...

Positional stability of field-reversed-configurations in the presence of resistive walls

Energy Technology Data Exchange (ETDEWEB)

Rath, N., E-mail: nrath@trialphanenergy.com; Onofri, M.; Barnes, D. C. [Tri Alpha Energy, P.O. Box 7010, Rancho Santa Margarita, California 92688-7010 (United States)

2016-06-15

We show that in a field-reversed-configuration, the plasma is unstable to either transverse or axial rigid displacement, but never to both. Driving forces are found to be parallel to the direction of displacement with no orthogonal components. Furthermore, we demonstrate that the properties of a resistive wall (geometry and resistivity) in the vicinity of the plasma do not affect whether the plasma is stable or unstable, but in the case of an unstable system determine the instability growth rate. Depending on the properties of the wall, the instability growth is dominated by plasma inertia (and not affected by wall resistivity) or dominated by ohmic dissipation of wall eddy currents (and thus proportional to the wall resistivity).

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Energy Technology Data Exchange (ETDEWEB)

Lin, Chun-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan (China); Tang, Jian-Fu; Su, Hsiu-Hsien [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hong, Cheng-Shong; Huang, Chih-Yu [Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

2016-06-28

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

Bias induced transition from an ohmic to a non-ohmic interface in supramolecular tunneling junctions with Ga2O3/EGaIn top electrodes.

Science.gov (United States)

Wimbush, Kim S; Fratila, Raluca M; Wang, Dandan; Qi, Dongchen; Liang, Cao; Yuan, Li; Yakovlev, Nikolai; Loh, Kian Ping; Reinhoudt, David N; Velders, Aldrik H; Nijhuis, Christian A

2014-10-07

This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ∼2.0 nm changed the nature of the monolayer-top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.

Modelling ohmic confinement experiments on the START tokamak

International Nuclear Information System (INIS)

Roach, C.M.

1996-05-01

Ohmic confinement data from the tight aspect ratio tokamak START has been analysed using the ASTRA transport simulation code. Neoclassical expressions have been modified to describe tight aspect ratio configurations, and the comparison between START data and models of anomalous transport has been made quantitative using the standard χ 2 test from statistics. Four confinement models (T11, Rebut-Lallia-Watkins, Lackner-Gottardi, and Taroni et al's Bohm model) have been compared with the START data. Three of the models are found to simulate START's electron temperature data moderately well, while Taroni et al's Bohm model overestimates electron temperatures in START by an order of magnitude. Thus comparison with START data tends to discriminate against Bohm models; these models are pessimistic or ITER. (author)

Time-dependent analysis of the resistivity of post-disruption tokamak plasmas

International Nuclear Information System (INIS)

Bakhtiari, M.; Whyte, D. G.

2006-01-01

The effect of neutrals on plasma resistivity due to electron-neutral collisions is studied with respect to its effect on tokamak disruptions. The resistivity of the tokamak plasma after the thermal quench is critical in determining the current quench rate, the plasma temperature, and runaway electron generation in tokamaks through the electric field, all features which are important for mitigating the damaging effect of disruptions. It is shown that the plasma resistivity during tokamak disruptions is a time-dependent parameter which may vary with disruption time scales due to the increasing fraction of neutrals. However the effect of neutrals on resistivity is found to be small for the expected neutral fraction, mostly due to power balance considerations between radiation and Ohmic heating in the plasma

Enhancement of ohmic and stochastic heating by resonance effects in capacitive radio frequency discharges: a theoretical approach.

Science.gov (United States)

Mussenbrock, T; Brinkmann, R P; Lieberman, M A; Lichtenberg, A J; Kawamura, E

2008-08-22

In low-pressure capacitive radio frequency discharges, two mechanisms of electron heating are dominant: (i) Ohmic heating due to collisions of electrons with neutrals of the background gas and (ii) stochastic heating due to momentum transfer from the oscillating boundary sheath. In this work we show by means of a nonlinear global model that the self-excitation of the plasma series resonance which arises in asymmetric capacitive discharges due to nonlinear interaction of plasma bulk and sheath significantly affects both Ohmic heating and stochastic heating. We observe that the series resonance effect increases the dissipation by factors of 2-5. We conclude that the nonlinear plasma dynamics should be taken into account in order to describe quantitatively correct electron heating in asymmetric capacitive radio frequency discharges.

Empirical scaling for present Ohmically heated tokamaks

International Nuclear Information System (INIS)

Daughney, C.

1975-01-01

Experimental results from the Adiabatic Toroidal Compressor (ATC) tokamak are used to obtain empirical scaling laws for the average electron temperature and electron energy confinement time as functions of the average electron density, the effective ion charge, and the plasma current. These scaling laws are extended to include dependence upon minor and major plasma radius and toroidal field strength through a comparison of the various tokamaks described in the literature. Electron thermal conductivity is the dominant loss process for the ATC tokamak. The parametric dependences of the observed electron thermal conductivity are not explained by present theoretical considerations. The electron temperature obtained with Ohmic heating is shown to be a function of current density - which will not be increased in the next generation of large tokamaks. However, the temperature dependence of the electron energy confinement time suggests that significant improvement in confinement time will be obtained with supplementary electron heating. (author)

Transport simulations of ohmic TFTR experiments with profile-consistent microinstability-based models for chi/sub e/ and chi/sub i/

International Nuclear Information System (INIS)

Redi, M.H.; Tang, W.M.; Efthimion, P.C.; Mikkelsen, D.R.; Schmidt, G.L.

1987-03-01

Transport simulations of ohmically heated TFTR experiments with recently developed profile-consistent microinstability models for the anomalous thermal diffusivities, chi/sub e/ and chi/sub i/, give good agreement with experimental data. The steady-state temperature profiles and the total energy confinement times, tau/sub e/, were found to agree for each of the ohmic TFTR experiments simulated, including three high radiation cases and two plasmas fueled by pellet injection. Both collisional and collisionless models are tested. The trapped-electron drift wave microinstability model results are consistent with the thermal confinement of large plasma ohmic experiments on TFTR. We also find that transport due to the toroidal ion temperature gradient (eta/sub i/) modes can cause saturation in tau/sub E/ at the highest densities comparable to that observed on TFTR and equivalent to a neoclassical anomaly factor of 3. Predictions based on stabilized eta/sub i/-mode-driven ion transport are found to be in agreement with the enhanced global energy confinement times for pellet-fueled plasmas. 33 refs., 26 figs., 4 tabs

Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

Energy Technology Data Exchange (ETDEWEB)

Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-02-01

Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts.

Science.gov (United States)

Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Liu, Yingce; Liu, Mengling; Liu, Zongyuan; Gui, Chengqun; Liu, Sheng

2017-10-30

We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic contacts. We show that a direct Ohmic contact to p-GaN layer using pure Ag is obtained when annealed at 600°C in N 2 ambient. A TiW diffusion barrier layer covered onto Ag is used to suppress the agglomeration of Ag and thus maintain high reflectance of Ag during high temperature annealing process. We develop a strip-shaped SiO 2 current blocking layer beneath the ITO/DBR to alleviate current crowding occurring in FCLED with ITO/DBR. Owing to negligibly small spreading resistance of Ag, however, our combined numerical and experimental results show that the FCLED with Ag/TiW has a more favorable current spreading uniformity in comparison to the FCLED with ITO/DBR. As a result, the light output power of FCLED with Ag/TiW is 7.5% higher than that of FCLED with ITO/DBR at 350 mA. The maximum output power of the FCLED with Ag/TiW obtained at 305.6 A/cm 2 is 29.3% larger than that of the FCLED with ITO/DBR obtained at 278.9 A/cm 2 . The improvement appears to be due to the enhanced current spreading and higher optical reflectance provided by the Ag/TiW.

Ohmically heated toroidal experiment (OHTE) mobile ignition test reactor facility concept study

International Nuclear Information System (INIS)

Masson, L.S.; Watts, K.D.; Piscitella, R.R.; Sekot, J.P.; Drexler, R.L.

1983-02-01

This report presents the results of a study to evaluate the use of an existing nuclear test complex at the Idaho National Engineering Laboratory (INEL) for the assembly, testing, and remote maintenance of the ohmically heated toroidal experiment (OHTE) compact reactor. The portable reactor concept is described and its application to OHTE testing and maintenance requirements is developed. Pertinent INEL facilities are described and several test system configurations that apply to these facilities are developed and evaluated

From TER to trans- and paracellular resistance: lessons from impedance spectroscopy.

Science.gov (United States)

Günzel, Dorothee; Zakrzewski, Silke S; Schmid, Thomas; Pangalos, Maria; Wiedenhoeft, John; Blasse, Corinna; Ozboda, Christopher; Krug, Susanne M

2012-06-01

In epithelia and endothelia, overall resistance (TER) is determined by all ion-conductive structures, such as membrane channels, tight junctions, and the intercellular space, whereas the epithelial capacitance is due to the hydrophobic phase of the plasma membrane. Impedance means alternating current resistance and, in contrast to ohmic resistance, takes into account that, e.g., capacitors become increasingly conductive with increasing frequency. Impedance spectroscopy uses the association of the capacitance with the transcellular pathway to distinguish between this capacitive pathway and purely conductive components (tight junctions, subepithelium). In detail, one-path impedance spectroscopy distinguishes the resistance of the epithelium from the resistance of subepithelial tissues. Beyond that, two-path impedance spectroscopy allows for the separation of paracellular resistance (governed by tight junctional properties) from transcellular resistance (determined by conductive structures residing in the cell membranes). The present paper reviews the basic principles of these techniques, some historic milestones, as well as recent developments in epithelial physiology. © 2012 New York Academy of Sciences.

Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

International Nuclear Information System (INIS)

Zhang Jian; Yang Hui; Zhang Qilong; Dong Shurong; Luo, J. K.

2013-01-01

ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10 3 , better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

Destruction of Bacillus cereus spores in a thick soy bean paste (doenjang) by continuous ohmic heating with five sequential electrodes.

Science.gov (United States)

Ryang, J H; Kim, N H; Lee, B S; Kim, C T; Rhee, M S

2016-07-01

This study selected spores from Bacillus cereus FSP-2 strain (the isolate from a commercial doenjang processing line) as the test strain which showed significantly higher thermal resistance (P 1·5 National Bureau of Standards units), treatment at 105°C for 60 s was selected and applied on a large scale (500 kg of product). Reliable and reproducible destruction of B. cereus spores occurred; the reductions achieved (to < 4 log CFU g(-1) ) met the Korean national standards. Scanning electron microscopy revealed microstructural alterations in the spores (shrinkage and a distorted outer spore coat). OH is an effective method for destroying B. cereus spores to ensure the microbiological quality and safety of a thick, highly viscous sauce. This study shows that an ohmic heating (OH) using a five sequential electrode system can effectively destroy highly heat-resistant Bacillus cereus spores which have been frequently found in a commercial doenjang processing line without perceivable quality change in the product. In addition, it may demonstrate high potential of the unique OH system used in this study that will further contribute to ensure microbiological quality and safety of crude sauces containing high levels of electrolyte other than doenjang as well. © 2016 The Society for Applied Microbiology.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N.; Gnade, B. E.

2010-01-01

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.

2010-04-27

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Ohmic heating of a spheromak to 100 eV

Energy Technology Data Exchange (ETDEWEB)

Jarboe, T.R.; Barnes, C.W.; Henins, I.; Hoida, H.W.; Knox, S.O.; Linford, R.K.; Sherwood, A.R.

1984-01-01

The first spheromaks with Thomson-scattering-measured electron temperatures of over 100 eV are described. The spheromak is generated by a magnetized coaxial plasma source in a background gas of 30 mTorr of H/sub 2/, and it is stably confined in an oblate 80 cm diam copper mesh flux conserver. The open mesh design allows rapid impurity transport out of the spheromak. The peak temperature, measured using multipoint Thomson scattering, is observed to rise from approximately 25 eV to over 100 eV in about 0.2 msec due to Ohmic heating from the decaying magnetic fields. Density (approx.5 x 10/sup 13/ cm/sup -3/) and magnetic fields (approximately 2 kG) are measured using interferometry and magnetic probes.

Ohmic heating of a spheromak to 100 eV

International Nuclear Information System (INIS)

Jarboe, T.R.; Barnes, C.W.; Henins, I.; Hoida, H.W.; Knox, S.O.; Linford, R.K.; Sherwood, A.R.

1984-01-01

The first spheromaks with Thomson-scattering-measured electron temperatures of over 100 eV are described. The spheromak is generated by a magnetized coaxial plasma source in a background gas of 30 mTorr of H 2 , and it is stably confined in an oblate 80 cm diam copper mesh flux conserver. The open mesh design allows rapid impurity transport out of the spheromak. The peak temperature, measured using multipoint Thomson scattering, is observed to rise from approximately 25 eV to over 100 eV in about 0.2 msec due to Ohmic heating from the decaying magnetic fields. Density (approx.5 x 10 13 cm -3 ) and magnetic fields (approximately 2 kG) are measured using interferometry and magnetic probes

Field and polarity dependence of time-to-resistance increase in Fe-O films studied by constant voltage stress method

International Nuclear Information System (INIS)

Eriguchi, Koji; Ohta, Hiroaki; Ono, Kouichi; Wei Zhiqiang; Takagi, Takeshi

2009-01-01

Constant voltage stress (CVS) was applied to Fe-O films prepared by a sputtering process to investigate a stress-induced resistance increase leading to a fundamental mechanism for switching behaviors. Under the CVS, an abrupt resistance increase was found for both stress polarities. A conduction mechanism after the resistance increase exhibited non-Ohmic transport. The time-to-resistance increase (t r ) under the CVS was revealed to strongly depend on stress voltage as well as the polarity. From a polarity-dependent resistance increase determined by a time-zero measurement, the voltage and polarity-dependent t r were discussed on the basis of field- and structure-enhanced thermochemical reaction mechanisms

Vertical resistivity in nanocrystalline ZnO and amorphous InGaZnO

Science.gov (United States)

McCandless, Jonathan P.; Leedy, Kevin D.; Schuette, Michael L.

2018-02-01

The goal is to gain additional insight into physical mechanisms and the role of microstructure on the formation of ohmic contacts and the reduction of contact resistance. We have measured a decreasing film resistivity in the vertical direction with increasing thickness of pulsed-laser deposited ZnO and IGZO. As the ZnO thickness increases from 122 nm to 441 nm, a reduction in resistivity from 3.29 Ω-cm to 0.364 Ω-cm occurred. The IGZO resistivity changes from 72.4 Ω-cm to 0.642 Ω-cm as the film is increased from 108nm to 219 nm. In the ZnO, the size of nanocolumnar grains increase with thickness resulting in fewer grain boundaries, and in the amorphous IGZO, the thicker region exhibits tunnel-like artifacts which may contribute to the reduced resistivity.

Effect of electropermeabilization by ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water and apple juice.

Science.gov (United States)

Park, Il-Kyu; Kang, Dong-Hyun

2013-12-01

The effect of electric field-induced ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water (BPW) (pH 7.2) and apple juice (pH 3.5; 11.8 °Brix) was investigated in this study. BPW and apple juice were treated at different temperatures (55°C, 58°C, and 60°C) and for different times (0, 10, 20, 25, and 30 s) by ohmic heating compared with conventional heating. The electric field strength was fixed at 30 V/cm and 60 V/cm for BPW and apple juice, respectively. Bacterial reduction resulting from ohmic heating was significantly different (Pheating at 58°C and 60°C in BPW and at 55°C, 58°C, and 60°C in apple juice for intervals of 0, 10, 20, 25, and 30 s. These results show that electric field-induced ohmic heating led to additional bacterial inactivation at sublethal temperatures. Transmission electron microscopy (TEM) observations and the propidium iodide (PI) uptake test were conducted after treatment at 60°C for 0, 10, 20, 25 and 30 s in BPW to observe the effects on cell permeability due to electroporation-caused cell damage. PI values when ohmic and conventional heating were compared were significantly different (Pheating can more effectively reduce bacterial populations at reduced temperatures and shorter time intervals, especially in acidic fruit juices such as apple juice. Therefore, loss of quality can be minimized in a pasteurization process incorporating ohmic heating.

Information of Zeff from the sawtooth-performances in the center of ohmic tokamak discharges

International Nuclear Information System (INIS)

Eberhagen, A.

1987-09-01

Achievement of information on the mean effective ion charge in the center of ohmic tokamak discharges from sawtooth-relaxations of the plasma is considered. This method is found to supply trustworthy results for usual tokamak parameters. While its application requires some effort in data analysis, it can provide a valuable determination of Z eff -data, independent of the information from bremsstrahlung radiation losses of the plasma. (orig.)

Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga{sub 2}O{sub 3} solar-blind ultraviolet photodetectors

Energy Technology Data Exchange (ETDEWEB)

Guo, D. Y.; Wu, Z. P.; An, Y. H.; Guo, X. C.; Chu, X. L.; Sun, C. L.; Tang, W. H., E-mail: whtang@bupt.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Li, L. H. [Physics Department, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States); Li, P. G., E-mail: pgli@zstu.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang (China)

2014-07-14

β-Ga{sub 2}O{sub 3} epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

A measurement method for determination of dc internal resistance of batteries and supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Zhao, Shuhong; Wu, Feng [Department of Materials Science, Beijing Science and Technology University, Beijing 100081 (China); Yang, Liuxiang; Gao, Lijun [Department of Chemistry, NanChang University, JiangXi 330031 (China); Burke, Andrew F. [Institute of Transportation, University of California, Davis, CA 95616 (United States)

2010-02-15

Internal resistance is an importance parameter determining the power performance of a battery or supercapacitor. An 8.5 Ah Li-ion battery and a 350 F supercapacitor were tested as examples to validate the measurement method of dc internal resistance. Voltage data were taken at 10 ms, 2 s and 30 s after the current interruption or pulse. The ac resistances at 1 kHz of the battery and supercapacitor were also measured for comparison with the dc values. Based on these tests, it is proposed that the dc internal resistance of the battery and supercapacitor be obtained from {delta}V/{delta}I where the {delta}V is the voltage change after the current interruption, and {delta}I means current change from I to 0. When the voltage change at 10 ms or less is selected, the resistance corresponds to the Ohmic resistance of the device. (author)

Resistance and resistance fluctuations in random resistor networks under biased percolation.

Science.gov (United States)

Pennetta, Cecilia; Reggiani, L; Trefán, Gy; Alfinito, E

2002-06-01

We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased processes consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady state of the RRN focusing on the properties of the non-Ohmic regime. In constant-voltage conditions, a scaling relation is found between /(0) and V/V(0), where is the average network resistance, (0) the linear regime resistance, and V0 the threshold value for the onset of nonlinearity. A similar relation is found in constant-current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the prebreakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.

Ohmic ion temperature and thermal diffusivity profiles from the JET neutron emission profile monitor

Energy Technology Data Exchange (ETDEWEB)

Esposito, B. (ENEA, Frascati (Italy). Centro Ricerche Energia); Marcus, F.B.; Conroy, S.; Jarvis, O.N.; Loughlin, M.J.; Sadler, G.; Belle, P. van (Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking); Adams, J.M.; Watkins, N. (AEA Industrial Technology, Harwell (United Kingdom))

1993-10-01

The JET neutron emission profile monitor was used to study ohmically heated deuterium discharges. The radial profile of the neutron emissivity is deduced from the line-integral data. The profiles of ion temperature, T[sub i], and ion thermal diffusivity, [chi][sub i], are derived under steady-state conditions. The ion thermal diffusivity is higher than, and its scaling with plasma current opposite to, that predicted by neoclassical theory. (author).

Ohmic ion temperature and thermal diffusivity profiles from the JET neutron emission profile monitor

International Nuclear Information System (INIS)

Esposito, B.

1993-01-01

The JET neutron emission profile monitor was used to study ohmically heated deuterium discharges. The radial profile of the neutron emissivity is deduced from the line-integral data. The profiles of ion temperature, T i , and ion thermal diffusivity, χ i , are derived under steady-state conditions. The ion thermal diffusivity is higher than, and its scaling with plasma current opposite to, that predicted by neoclassical theory. (author)

Effect of morphology on the non-ohmic conduction in ZnO nanostructures

Science.gov (United States)

Praveen, E.; Jayakumar, K.

2016-05-01

Nanostructures of ZnO is synthesized with nanoflower like morphology by simple wet chemical method. The structural, morphological and electrical characterization have been carried out. The temperature dependent electrical characterization of ZnO pellets of thickness 1150 µm is made by the application of 925MPa pressure. The morphological dependence of non-ohmic conduction beyond some arbitrary tunneling potential and grain boundary barrier thickness is compared with the commercially available bulk ZnO. Our results show the suitability of nano-flower like ZnO for the devices like sensors, rectifiers etc.

MHD-activity in ohmic, diverted and limited H-mode plasmas in TCV

International Nuclear Information System (INIS)

Pochelon, A.; Anton, M.; Buehlmann, F.; Dutch, M.J.; Duval, B.P.; Hirt, A.; Hofmann, F.; Joye, B.; Lister, J.B.; Llobet, X.; Martin, Y.; Moret, J.M.; Nieswand, C.; Pietrzyk, A.Z.; Tonetti, G.; Weisen, H.

1994-01-01

During its first year of operation the TCV tokamak has produced a variety of plasma configurations with currents in the range 150 to 800 kA and elongations in the range of 1.0 to 2.05. Ohmic H-modes have been obtained in diverted discharges and discharges limited on the graphite tiles inner wall. After boronisation in May 1994 H-modes with line average densities up to 1.7x10 20 m -3 , corresponding to a Murakami parameter of 10, were obtained. (author) 5 figs., 2 refs

Ti(r) profiles from the JET neutron profile monitor for ohmic discharges

Energy Technology Data Exchange (ETDEWEB)

Esposito, B. (ENEA, Frascati (Italy). Centro Ricerche Energia); Marcus, F.B.; Conroy, S.; Jarvis, O.N.; Loughlin, M.J.; Sadler, G.; Belle, P. van (Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking); Adams, J.M.; Watkins, N. (AEA Industrial Technology, Harwell (United Kingdom))

1991-01-01

A study has been made of the neutron emissivity, using the JET neutron profile monitor, obtained for ohmically heated deuterium discharges. Both one-dimensional (1-D) best-fit inversion procedures and 2-D tomography have been used to deduce the radial profile of the neutron emission from the line-integral data. The profiles of ion temperature and ion thermal conductivity are then derived. The scaling of the ion thermal conductivity with plasma current is found to be opposite to that of neoclassical theory. (author) 4 refs., 5 figs.

Al and Cu Implantation into Silicon Substrate for Ohmic Contact in Solar Cell Fabrication

International Nuclear Information System (INIS)

Sri Sulamdari; Sudjatmoko; Wirjoadi; Yunanto; Bambang Siswanto

2002-01-01

Research on the implantation of Al and Cu ions into silicon substrate for ohmic contact in solar cell fabrication has been carried using ion accelerator machine. Al and Cu ions are from 98% Al and 99.9% Cu powder ionized in ion source system. provided in ion implantor machine. Before implantation process, (0.5 x 1) cm 2 N type and P type silicon were washed in water and then etched in Cp-4A solution. After that, P type silicon were implanted with Al ions and N type silicon were implanted with Cu ions with the ions dose from 10 13 ion/cm 2 - 10 16 ion/cm 2 and energy 20 keV - 80 keV. Implanted samples were then annealed at temperature 400 o C - 850 o C. Implanted and annealed samples were characterized their resistivities using four point probe FPP-5000. It was found that at full electrically active conditions the ρ s for N type was 1.30 x 10 8 Ω/sq, this was achieved at ion dose 10 13 ion/cm 2 and annealing temperature 500 o C. While for P type, the ρ s was 1.13 x 10 2 Ω/sq, this was achieved at ion dose 10 13 ion/cm 2 and energy 40 keV, and annealing temperature 500 o C. (author)

Bulk and contact resistances of gas diffusion layers in proton exchange membrane fuel cells

Science.gov (United States)

Ye, Donghao; Gauthier, Eric; Benziger, Jay B.; Pan, Mu

2014-06-01

A multi-electrode probe is employed to distinguish the bulk and contact resistances of the catalyst layer (CL) and the gas diffusion layer (GDL) with the bipolar plate (BPP). Resistances are compared for Vulcan carbon catalyst layers (CL), carbon paper and carbon cloth GDL materials, and GDLs with microporous layers (MPL). The Vulcan carbon catalyst layer bulk resistance is 100 times greater than the bulk resistance of carbon paper GDL (Toray TG-H-120). Carbon cloth (CCWP) has bulk and contact resistances twice those of carbon paper. Compression of the GDL decreases the GDL contact resistance, but has little effect on the bulk resistance. Treatment of the GDL with polytetrafluoroethylene (PTFE) increases the contact resistance, but has little effect on the bulk resistance. A microporous layer (MPL) added to the GDL decreases the contact resistance, but has little effect on the bulk resistance. An equivalent circuit model shows that for channels less than 1 mm wide the contact resistance is the major source of electronic resistance and is about 10% of the total ohmic resistance associated with the membrane electrode assembly.

Bayesian Analysis of Hot-Jupiter Radius Anomalies: Evidence for Ohmic Dissipation?

Science.gov (United States)

Thorngren, Daniel P.; Fortney, Jonathan J.

2018-05-01

The cause of hot-Jupiter radius inflation, where giant planets with {T}eq} > 1000 K are significantly larger than expected, is an open question and the subject of many proposed explanations. Many of these hypotheses postulate an additional anomalous power that heats planets’ convective interiors, leading to larger radii. Rather than examine these proposed models individually, we determine what anomalous powers are needed to explain the observed population’s radii, and consider which models are most consistent with this. We examine 281 giant planets with well-determined masses and radii and apply thermal evolution and Bayesian statistical models to infer the anomalous power as a fraction of (and varying with) incident flux ɛ(F) that best reproduces the observed radii. First, we observe that the inflation of planets below about M = 0.5 M J appears very different than their higher-mass counterparts, perhaps as the result of mass loss or an inefficient heating mechanism. As such, we exclude planets below this threshold. Next, we show with strong significance that ɛ(F) increases with {T}eq} toward a maximum of ∼2.5% at T eq ≈ 1500 K, and then decreases as temperatures increase further, falling to ∼0.2% at T eff = 2500 K. This high-flux decrease in inflation efficiency was predicted by the Ohmic dissipation model of giant planet inflation but not other models. We also show that the thermal tides model predicts far more variance in radii than is observed. Thus, our results provide evidence for the Ohmic dissipation model and a functional form for ɛ(F) that any future theories of hot-Jupiter radii can be tested against.

Flow and volume dependence of rat airway resistance during constant flow inflation and deflation.

Science.gov (United States)

Rubini, Alessandro; Carniel, Emanuele Luigi; Parmagnani, Andrea; Natali, Arturo Nicola

2011-12-01

The aim of this study was to measure the flow and volume dependence of both the ohmic and the viscoelastic pressure dissipations of the normal rat respiratory system separately during inflation and deflation. The study was conducted in the Respiratory Physiology Laboratory in our institution. Measurements were obtained for Seven albino Wistar rats of both sexes by using the flow interruption method during constant flow inflations and deflations. Measurements included anesthesia induction, tracheostomy and positioning of a tracheal cannula, positive pressure ventilation, constant flow respiratory system inflations and deflations at two different volumes and flows. The ohmic resistance exhibited volume and flow dependence, decreasing with lung volume and increasing with flow rate, during both inflation and deflation. The stress relaxation-related viscoelastic resistance also exhibited volume and flow dependence. It decreased with the flow rate at a constant lung volume during both inflation and deflation, but exhibited a different behavior with the lung volume at a constant flow rate (i.e., increased during inflations and decreased during deflations). Thus, stress relaxation in the rat lungs exhibited a hysteretic behavior. The observed flow and volume dependence of respiratory system resistance may be predicted by an equation derived from a model of the respiratory system that consists of two distinct compartments. The equation agrees well with the experimental data and indicates that the loading time is the critical parameter on which stress relaxation depends, during both lung inflation and deflation.

Combined use of a field-plate and narrow p-barriers for a wide-pitch ohmic-side readout of the BELLE double-sided SVD

International Nuclear Information System (INIS)

Ikeda, H.; Matsuda, T.

1997-01-01

We explored wide-pitch ohmic-side structures for the BELLE SVD, where we proposed a field-plate structure combined with narrow p-barriers in between the readout electrodes of 90, 113, 180, and 226 μm-pitch detectors. The effect of the p-barriers was studied with a numerical model to trace the carrier trajectories. The charge collection and sharing properties were examined in practice for prototype small-size detectors with an IR pulse shining from either the junction side or the ohmic side. The channel separation capabilities were also shown to be appropriate under nominal operation conditions. (orig.)

Evidence for reduction of the toroidal ITG instability in the transition from saturated to improved Ohmic confinement in the tokamak TEXTOR

International Nuclear Information System (INIS)

Kreter, A; Schweer, B; Tokar, M Z; Unterberg, B

2003-01-01

In high density Ohmically heated discharges in the tokamak TEXTOR a transition from the saturated Ohmic confinement (SOC) to the improved Ohmic confinement (IOC) was observed triggered by a sudden reduction of the external gas flow. The SOC-IOC transition was investigated regarding the influence of the toroidal ITG instability driven by the ion temperature gradient (ITG). The ion temperature profiles were measured with high radial resolution by means of charge-exchange recombination spectroscopy (CXRS) with a high-energetic diagnostic hydrogen beam recently installed at TEXTOR. On the basis of the measured ion temperature distributions the η i parameter (ratio of the density and ion temperature decay lengths) and the growth rate of the toroidal ITG instability were calculated. After the SOC-IOC transition η i drops and lies in a noticeably smaller radial region over the threshold for the toroidal ITG. In consequence of it, the IOC regime is characterized by a clear reduction of the ITG growth rate γ ITG which was calculated including finite Larmor radius effects. The steepening of the plasma density profile after the decrease of the external gas flow is the main reason for the reduction of the ITG growth rate and the subsequent confinement transition to the IOC regime

Resistive switching properties and physical mechanism of europium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Xie, Wei; Zou, Changwei [School of Physical Science and Technology, Lingnan Normal University, Zhanjiang (China); Bao, Dinghua [State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou (China)

2017-09-15

A forming-free resistive switching effect was obtained in Pt/Eu{sub 2}O{sub 3}/Pt devices in which the Eu{sub 2}O{sub 3} thin films were fabricated by a chemical solution deposition method. The devices show unipolar resistive switching with excellent switching parameters, such as high resistance ratio (10{sup 7}), stable resistance values (read at 0.2 V), low reset voltage, good endurance, and long retention time (up to 10{sup 4} s). On the basis of the analysis of the current-voltage (I-V) curves and the resistance-temperature dependence, it can be concluded that the dominant conducting mechanisms were ohmic behavior and Schottky emission at low resistance state and high resistance state, respectively. The resistive switching behavior could be explained by the formation and rupture of conductive filament, which is related to the abundant oxygen vacancies generated in the deposition process. This work demonstrates the great potential opportunities of Eu{sub 2}O{sub 3} thin film in resistive switching memory applications, which might possess distinguished properties. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Backscattering analysis of AuGe-Ni ohmic contacts of n-GaAs

International Nuclear Information System (INIS)

Nassibian, A.G.; Kalkur, T.S.; Sutherland, G.J.; Cohen, D.

1985-01-01

AuGe-Ni is widely used for the fabrication of ohmic contacts to n-GaAs. The alloying behaviour of evaporated AuGe-Ni alloyed by furnace and Scanning Electron Beam, is characterised by Rutherford backscattering with 2MeV 4 He ions. Since the formation of alloyed AuGe-Ni contacts involves redistribution and diffusion of Ga, As, Ni, Ge and Au, it is difficult to separate the corresponding yields due to gold, Ga As, Ni and Ge in the spectrum. The technique used in the investigation involves assumption of depth distribution of elements and computing the resultant spectrum

Achieving improved ohmic confinement via impurity injection

International Nuclear Information System (INIS)

Bessenrodt-Weberpals, M.; Soeldner, F.X.

1991-01-01

Improved Ohmic Confinement (IOC) was obtained in ASDEX after a modification of the divertors that allowed a larger (deuterium and impurity) backflow from the divertor chamber. The quality of IOC depended crucially on the wall conditions, i.e. IOC was best for uncovered stainless steels walls and vanished with boronization. Furthermore, IOC was found only in deuterium discharges. These circumstances led to the idea that IOC correlates with the content of light impurities in the plasma. To substantiate this working hypothesis, we present observations in deuterium discharges with boronized wall conditions into which various impurities have been injected with the aim to induce IOC conditions. Firstly, the plasma behaviour in typical IOC discharges is characterized. Secondly, injection experiments with the low-Z impurities nitrogen and neon as well as with the high-Z impurities argon and krypton are discussed. Then, we concentrate on optimized neon puffing that yields the best confinement results which are similar to IOC conditions. Finally, these results are compared with eperiments in other tokamaks and some conclusions are drawn about the effects of the impurity puffing on both, the central and the edge plasma behaviour. (orig.)

On the evaluation of currents in a tokamak plasma during combined Ohmic and RF current drive

International Nuclear Information System (INIS)

Eckhartt, D.

1986-09-01

By taking into account the rf-generated enhancement of the plasma electric conductivity (as formulated by Fisch in the limit of weak dc electric fields) a relation is derived between the ratio of rf to Ohmically driven currents and other plasma parameters to be measured before and after the rf onset under the condition of constant net plasma current. (author)

Thermal degradation of ohmic contacts on semipolar (11-22) GaN films grown on m-plane (1-100) sapphire substrates

International Nuclear Information System (INIS)

Kim, Doo Soo; Kim, Deuk Young; Seo, Yong Gon; Kim, Ji Hoon; Hwang, Sung Min; Baik, Kwang Hyeon

2012-01-01

Semipolar (11-22) GaN films were grown on m-plane (1-100) sapphire substrates by using metalorganic chemical vapor deposition. The line widths of the omega rocking curves of the semipolar GaN films were 498 arcsec along the [11-23] GaN direction and 908 arcsec along the [10-10] GaN direction. The properties of the Ti/Al/Ni/Au metal contact were investigated using transmission-line-method patterns oriented in both the [11-23] GaN and the [10-10] GaN directions of semipolar (11-22) GaN. The minimum specific contact resistance of ∼3.6 x 10 -4 Ω·cm -2 was obtained on as-deposited metal contacts. The Ohmic contact properties of semipolar (11-22) GaN became degraded with increasing annealing temperature above 400 .deg. C. The thermal degradation of the metal contacts may be attributed to the surface property of N-polarity on the semipolar (11-22) GaN films. Also, the semipolar (11-22) GaN films did not show clear anisotropic behavior of the electrical properties for different azimuthal angles.

Hydrogen and deuterium pellet injection into ohmically and additionally ECR-heated TFR plasmas

International Nuclear Information System (INIS)

Drawin, H.W.

1987-01-01

The ablation clouds of hydrogen and deuterium pellets injected into ohmically and electron cyclotron resonance heated (ECRH) plasmas of the Fontenay-aux-Roses tokamak TFR have been photographed, their emission has been measured photoelectrically. Without ECRH the pellets penetrate deeply into the plasma, the clouds are striated. Injection during ECRH leads to ablation in the outer plasma region. The position of the ECR layer has no influence on the penetration depth which is only a few centimeters. The ablation clouds show no particular structure when ECRH is applied

Density fluctuations in ohmic-, L-mode an H-mode discharges of ASDEX

Energy Technology Data Exchange (ETDEWEB)

Dodel, G; Holzhauer, E [Stuttgart Univ. (Germany). Inst. fuer Plasmaforschung; Niedermeyer, H; Endler, M; Gerhardt, J; Giannone, L.; Wagner, F; Zohm, H [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany)

1991-01-01

The 119 [mu]m laser scattering device ASDEX was used to investigate the direction of propagation and temporal development of density fluctuations. In ohmic discharges the density fluctuations propagate predominantly in the electron-diamagnetic direction and change direction with NI co-injection. A strong drop in total scattered power together with a further increase in the frequency shift is observed after the build-up of the transport barrier. Similar observations have been reported on other tokamaks. Due to the finite spatial resolution of the scattering system the variation of the fluctuations with local parameters cannot be sufficiently resolved to confirm their nature. (author) 5 refs., 3 figs.

Density fluctuations in ohmic-, L-mode an H-mode discharges of ASDEX

International Nuclear Information System (INIS)

Dodel, G.; Holzhauer, E.

1991-01-01

The 119 μm laser scattering device ASDEX was used to investigate the direction of propagation and temporal development of density fluctuations. In ohmic discharges the density fluctuations propagate predominantly in the electron-diamagnetic direction and change direction with NI co-injection. A strong drop in total scattered power together with a further increase in the frequency shift is observed after the build-up of the transport barrier. Similar observations have been reported on other tokamaks. Due to the finite spatial resolution of the scattering system the variation of the fluctuations with local parameters cannot be sufficiently resolved to confirm their nature. (author) 5 refs., 3 figs

Desgn of a 20-MJ superconducting ohmic-heating coil

International Nuclear Information System (INIS)

Singh, S.K.; Murphy, J.H.; Janocko, M.A.; Haller, H.E.; Litz, D.C.; Eckels, P.W.; Rogers, J.D.; Thullen, P.

1979-01-01

Conceptual designs of 20-MJ superconducting coils which were developed to demonstrate the feasibility of an ohmic-heating system were discussed. The superconductor materials were NbTi and Nb 3 Sn for the pool boil and forced-flow cooling, respectively. The coils were designed to be cryostable for bipolar operation from +7 to -7 tesla maximum field within one second. The structural design addresses the distribution of structure and structural materials used in the pulsed field environment. The cyclic stresses anticipated and the fatigue limits of the structural materials were examined in view of the operating life of the coil. The coils were designed to generate the flux swings while simultaneously meeting the limitations imposed by cooling, insulation, current density and the stresses in the materials. Both the pool and forced cooled conductors have the same criterion for cryostability, i.e., the conductor must return to the superconducting state from an initial temperature of 20 0 K while the full transport current is flowing through the conductor

Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

Science.gov (United States)

Lee, N. J.; Kang, T. S.; Hu, Q.; Lee, T. S.; Yoon, T.-S.; Lee, H. H.; Yoo, E. J.; Choi, Y. J.; Kang, C. J.

2018-06-01

Tri-state resistive switching characteristics of bilayer resistive random access memory devices based on manganese oxide (MnO)/tantalum oxide (Ta2O5) have been studied. The current–voltage (I–V) characteristics of the Ag/MnO/Ta2O5/Pt device show tri-state resistive switching (RS) behavior with a high resistance state (HRS), intermediate resistance state (IRS), and low resistance state (LRS), which are controlled by the reset process. The MnO/Ta2O5 film shows bipolar RS behavior through the formation and rupture of conducting filaments without the forming process. The device shows reproducible and stable RS both from the HRS to the LRS and from the IRS to the LRS. In order to elucidate the tri-state RS mechanism in the Ag/MnO/Ta2O5/Pt device, transmission electron microscope (TEM) images are measured in the LRS, IRS and HRS. White lines like dendrites are observed in the Ta2O5 film in both the LRS and the IRS. Poole–Frenkel conduction, space charge limited conduction, and Ohmic conduction are proposed as the dominant conduction mechanisms for the Ag/MnO/Ta2O5/Pt device based on the obtained I–V characteristics and TEM images.

Application of low frequency pulsed ohmic heating for inactivation of foodborne pathogens and MS-2 phage in buffered peptone water and tomato juice.

Science.gov (United States)

Kim, Sang-Soon; Choi, Won; Kang, Dong-Hyun

2017-05-01

The purpose of this study was to inactivate foodborne pathogens effectively by ohmic heating in buffered peptone water and tomato juice without causing electrode corrosion and quality degradation. Escherichia coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes were used as representative foodborne pathogens and MS-2 phage was used as a norovirus surrogate. Buffered peptone water and tomato juice inoculated with pathogens were treated with pulsed ohmic heating at different frequencies (0.06-1 kHz). Propidium iodide uptake values of bacterial pathogens were significantly (p heating is applicable to inactivate foodborne pathogens effectively without causing electrode corrosion and quality degradation in tomato juice. Copyright © 2016. Published by Elsevier Ltd.

A 1.5 MJ cryostatic stable superconducting ohmic-heating coil

International Nuclear Information System (INIS)

Wang, S.-T.; Kim, S.H.; Praeg, W.F.; Krieger, C.I.

1978-01-01

As early as FY 1975, ANL had recognized the clear advantage of a superconducting ohmic-heating (OH) coil and proposed a five-year pulsed coil and power supply development program to ERDA. With modest funding made available by ERDA in FY 1977 and the use of substantial equipment inventory at ANL, a small but agressive development program was advanced to the construction of a 1.5 MJ model coil. The principle objective in building the 1.5 MJ ac coil is to demonstrate ac cryostability of a large coil with a dB/dt ranging from 2 T/s up to 14 T/s. The results of basic cable development and tests will be described. The design and construction of a prototype 1.5 MJ cryostable pulsed coil and its nonmetallic cryostat will be presented. (author)

New fast switches for the Tore Supra ohmic heating circuit

International Nuclear Information System (INIS)

Zunino, K.; Bruneth, J.; Cara, P.; Louart, A.; Santagiustina, A.; Emelyanova, I.; Filippov, F.; Mikailov, N.

2003-01-01

The Tore-Supra ohmic heating circuit is equipped with four fast make switches and one fast opening switch. After many years of operation, it became necessary to substitute this equipment by modern components with similar ratings. An extensive research has been undertaken to find fast switches able to withstand more than 2500 operations per year without maintenance, at a make current of 54 kA, a voltage of 12 kV and with a closing time of less than 15 ms. At the end of the investigation, it was decided to replace the old components by fast mechanical switches proposed by the Efremov Institute and based on a prototype developed for ITER. This paper presents the technical requirements and the characteristics of the switches and describes the operational experience gained with these components during operating campaigns of 2002 and 2003. (authors)

Steady-state resistive toroidal-field coils for tokamak reactors

International Nuclear Information System (INIS)

Kalnavarns, J.; Jassby, D.L.

1979-12-01

If spatially-averaged values of the beta ratio can reach 5 to 10% in tokamaks, as now seems likely, resistive toroidal-field coils may be advantageous for use in reactors intended for fusion-neutron applications. The present investigation has parameterized the design of steady-state water-cooled copper coils of rectangular cross section in order to maximize figures of merit such as the ratio of fusion neutron wall loading to coil power dissipation. Four design variations distinguished by different ohmic-heating coil configurations have been examined. For a wall loading of 0.5 MW/m 2 , minimum TF-coil lifetime costs (including capital and electricity costs) are found to occur with coil masses in the range 2400 to 4400 tons, giving 200 to 250 MW of resistive dissipation, which is comparable with the total power drain of the other reactor subsystems

Modeling of the L.F. turbulent spectrum during ohmic discharges, auxiliary heating and disruptions in Tokamak

International Nuclear Information System (INIS)

Truc, A.

1983-07-01

The spectrum of low frequency turbulence in the TFR tokamak, as observed along a central chord by a CO 2 laser light diffusion diagnostic, appears to be representable by four monomial branches joining to three vertices. This schematic representation permits to follow more easily the evolution of the turbulence during the life of the plasma, including the ohmic regime, the transitions to auxiliary heating and the minor and major disruptions

Changes in core electron temperature fluctuations across the ohmic energy confinement transition in Alcator C-Mod plasmas

International Nuclear Information System (INIS)

Sung, C.; White, A.E.; Howard, N.T.; Oi, C.Y.; Rice, J.E.; Gao, C.; Ennever, P.; Porkolab, M.; Parra, F.; Ernst, D.; Walk, J.; Hughes, J.W.; Irby, J.; Kasten, C.; Hubbard, A.E.; Greenwald, M.J.; Mikkelsen, D.

2013-01-01

The first measurements of long wavelength (k y ρ s < 0.3) electron temperature fluctuations in Alcator C-Mod made with a new correlation electron cyclotron emission diagnostic support a long-standing hypothesis regarding the confinement transition from linear ohmic confinement (LOC) to saturated ohmic confinement (SOC). Electron temperature fluctuations decrease significantly (∼40%) crossing from LOC to SOC, consistent with a change from trapped electron mode (TEM) turbulence domination to ion temperature gradient (ITG) turbulence as the density is increased. Linear stability analysis performed with the GYRO code (Candy and Waltz 2003 J. Comput. Phys. 186 545) shows that TEMs are dominant for long wavelength turbulence in the LOC regime and ITG modes are dominant in the SOC regime at the radial location (ρ ∼ 0.8) where the changes in electron temperature fluctuations are measured. In contrast, deeper in the core (ρ < 0.8), linear stability analysis indicates that ITG modes remain dominant across the LOC/SOC transition. This radial variation suggests that the robust global changes in confinement of energy and momentum occurring across the LOC/SOC transition are correlated to local changes in the dominant turbulent mode near the edge. (paper)

Investigation of optimum ohmic heating conditions for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in apple juice.

Science.gov (United States)

Park, Il-Kyu; Ha, Jae-Won; Kang, Dong-Hyun

2017-05-19

Control of foodborne pathogens is an important issue for the fruit juice industry and ohmic heating treatment has been considered as one of the promising antimicrobial interventions. However, to date, evaluation of the relationship between inactivation of foodborne pathogens and system performance efficiency based on differing soluble solids content of apple juice during ohmic heating treatment has not been well studied. This study aims to investigate effective voltage gradients of an ohmic heating system and corresponding sugar concentrations (°Brix) of apple juice for inactivating major foodborne pathogens (E. coli O157:H7, S. Typhimurium, and L. monocytogenes) while maintaining higher system performance efficiency. Voltage gradients of 30, 40, 50, and 60 V/cm were applied to 72, 48, 36, 24, and 18 °Brix apple juices. At all voltage levels, the lowest heating rate was observed in 72 °Brix apple juice and a similar pattern of temperature increase was shown in18-48 °Brix juice samples. System performance coefficients (SPC) under two treatment conditions (30 V/cm in 36 °Brix or 60 V/cm in 48 °Brix juice) were relatively greater than for other combinations. Meanwhile, 5-log reductions of the three foodborne pathogens were achieved after treatment for 60 s in 36 °Brix at 30 V/cm, but this same reduction was observed in 48 °Brix juice at 60 V/cm within 20 s without affecting product quality. With respect to both bactericidal efficiency and SPC values, 60 V/cm in 48 °Brix was the most effective ohmic heating treatment combination for decontaminating apple juice concentrates.

Crevice corrosion kinetics of nickel alloys bearing chromium and molybdenum

International Nuclear Information System (INIS)

Zadorozne, N.S.; Giordano, C.M.; Rodríguez, M.A.; Carranza, R.M.; Rebak, R.B.

2012-01-01

Highlights: ► The crevice corrosion resistance of the tested alloys increased with PREN, which is mainly affected by their Mo content. ► Crevice corrosion kinetics was controlled by ohmic drop only in the more dilute chloride solutions. ► Charge transfer control was observed in concentrated chloride solutions. ► A critical ohmic drop was not necessary for crevice corrosion to occur. ► Ohmic drop was a consequence of the crevice corrosion process in certain conditions. - Abstract: The crevice corrosion kinetics of alloys C-22, C-22HS and HYBRID-BC1 was studied in several chloride solutions at 90 °C. The crevice corrosion resistance of the alloys increased with PREN (Pitting Resistance Equivalent Number), which is mainly affected by the Mo content in the alloys. The crevice corrosion kinetics of the three alloys was analyzed at potentials slightly higher than the repassivation potential. Crevice propagation was controlled by ohmic drop in the more dilute chloride solutions, and by charge transfer in the more concentrated chloride solutions. Ohmic drop was not a necessary condition for crevice corrosion to occur.

Measurement of the drift velocities of electrons and holes in high-ohmic silicon

International Nuclear Information System (INIS)

Scharf, Christian

2014-02-01

Measurements of the drift velocities of electrons and holes as a function of the electric field and the temperature in high-ohmic silicon of crystal orientation are presented. Significant differences between our results and literature values are observed. A new parametrization of the mobility is introduced. Current transients of n-type pad diodes, generated by fast laser pulses, were investigated in order to determine the drift velocity of electrons and holes separately. Two diodes of high-ohmic silicon (1.5 kΩcm and 5.5 kΩcm) from different manufacturers were investigated as cross check. The drift velocities were determined at electric fields ranging from 5 kV/cm to 50 kV/cm at temperatures ranging from 233 K to 333 K. The mobility parameters were obtained by fitting a simulation of charge drift in silicon to the measurements. Using the convolution theorem the response function of the read-out circuit was determined with the Fourier transforms of the measurement and the simulation. The simulated transient current pulses with the new mobility parametrization are consistent with the measured ones for the temperature and electric field range investigated here. Additionally, the mobility results from the fit are consistent with the mobility determined using the simpler time-of-flight method in the field range where this method is applicable. However, our measurements show a difference of up to 14 % to the values by Canali et al. (1971). The difference to the mobility parametrization by Jacoboni et al. (1977) is up to 24 % while this parametrization is widely used for simulations of the direction due to the lack of data for silicon.

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

KAUST Repository

Wu, S.

2013-12-12

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

Spectroscopic study of ohmically heated Tokamak discharges

International Nuclear Information System (INIS)

Breton, C.; Michelis, C. de; Mattioli, M.

1980-07-01

Tokamak discharges interact strongly with the wall and/or the current aperture limiter producing recycling particles, which penetrate into the discharge and which can be studied spectroscopically. Working gas (hydrogen or deuterium) is usually studied observing visible Balmer lines at several toroidal locations. Absolute measurements allow to obtain both the recycling flux and the global particle confinement time. With sufficiently high resolution the isotopic plasma composition can be obtained. The impurity elements can be divided into desorbed elements (mainly oxygen) and eroded elements (metals from both walls and limiter) according to the plasma-wall interaction processes originating them. Space-and time-resolved emission in the VUV region down to about 20 A will be reviewed for ohmically-heated discharges. The time evolution can be divided into four phases, not always clearly separated in a particular discharge: a) the initial phase, lasting less than 10 ms (the so-called burn-out phase), b) the period of increasing plasma current and electron temperature, lasting typically 10 - 100 ms, c) an eventual steady state (plateau of the plasma current with almost constant density and temperature), d) the increase of the electron density up to or just below the maximum value attainable in a given device. For all these phases the results reported from different devices will be described and compared

Rigorous treatment of the non-ohmic d.c. conductivity due to phonon-assisted tunneling from localized to extended states

International Nuclear Information System (INIS)

Majernikova, E.

1984-03-01

A quantitative treatment of the non-ohmic current response due to delocalization of shallow localized electrons in a model of a disordered solid is given. A phonon-assisted tunneling in electric field from shallow localized to extended states is confirmed as a mechanism leading to the dependence which was experimentally found for chalcogenide glasses. (author)

Ohmic heating coil power supply using thyristor circuit breaker in a thermonuclear fusion device

International Nuclear Information System (INIS)

Tani, Keiji; Shimada, Ryuichi; Tamura, Sanae; Yabuno, Kohei; Koseki, Shoichiro.

1982-01-01

In a large scale Tokamak thermonuclear fusion device such as the critical plasma testing facility (JT60) presently under construction, mechanical breakers such as vacuum and air breakers are mostly used for interrupting DC heavy current which is supplied to the ohmic heating coils of inductive energy accumulation method. The practical use of the DC breakers employing thyristors has just been started because the history of thyristor development is short and thristors are still expensive, in spite of the advantages. In this paper, the circuit is investigated in which the excellent high speed controllability of thyristors is fully utilized, while the economy is taken into accout, and the experiment carried out with a unit model is described. It was found that a thyristor switch, which was constructed by connecting the high speed thyristors of peak off-state voltage rating 2,000 V and mean current rating 500 A in direct parallel, was able to interrupt 12.7 kA current in the power supply circuit of ohmic heating coils developed this time. In addition, the switch configuration was able to be greatly simplified. When the multistage raising of plasma current is required, the raise can be performed with a single thyristor breaker because it can make high speed control. Therefore, the capacity of the breaker can be doubly and drastically reduced. Also, if current unbalance might occur between thyristor switch units, it gives no problem since the time of reverse voltage after current interruption dispersed smaller as current increased. (Wakatsuki, Y.)

Analysis of Electron Thermal Diffusivity and Bootstrap Current in Ohmically Heated Discharges after Boronization in the HT-7 Tokamak

International Nuclear Information System (INIS)

Zhang, X.M.; Wan, B.N.

2005-01-01

Significant improvements of plasma performance after ICRF boronization have been achieved in the full range of HT-7 operation parameters. Electron power balance is analyzed in the steady state ohmic discharges of the HT-7 tokamak. The ratio of the total radiation power to ohmic input power increases with increasing the central line-averaged electron density, but decreases with plasma current. It is obviously decreased after wall conditioning. Electron heat diffusivity χ e deduced from the power balance analysis is reduced throughout the main plasma after boronization. χ e decreases with increasing central line-averaged electron density in the parameter range of our study. After boronization, the plasma current profile is broadened and a higher current can be easily obtained on the HT-7 tokamak experiment. It is expected that the fact that the bootstrap current increases after boronization will explain these phenomena. After boronization, the plasma pressure gradient and the electron temperature near the boundary are larger than before, these factors influencing that the ratio of bootstrap current to total plasma current increases from several percent to above 10%

Turbulence and energy confinement in TORE SUPRA ohmic discharges

International Nuclear Information System (INIS)

Garbet, X.; Payan, J.; Laviron, C.; Devynck, P.; Saha, S.K.; Capes, H.; Chen, X.P.; Coulon, J.P.; Gil, C.; Harris, G.; Hutter, T.; Pecquet, A.L.

1992-06-01

Results on confinement and turbulence from a set of ohmic discharges in Tore Supra are discussed. The attention is focused on the saturation of the energy confinement time and it is emphasized that this saturation could be explained by a saturation of the electron heat diffusivity. Ion behaviour is indeed governed by dilution and equipartition effects. Although the ion heat transport is never neoclassical, there is no enhanced degradation at the saturation. This behaviour is confirmed by turbulence measurements given by CO 2 laser coherent scattering. The density fluctuations level follows the electron heat diffusivity variations with the average density. Waves propagating in the ion diamagnetic direction are always present in turbulence frequency spectra. Thus, the saturation cannot be explained by the onset of an ion turbulence. The existence of an ion turbulence at the edge at all densities cannot be excluded. However, this ion feature in scattering spectra could be explained by a Doppler shift associated to an inversion point of the radial electric field at the edge

Conceptual designs of 50 kA 20 MJ superconducting ohmic heating coils

International Nuclear Information System (INIS)

Singh, S.K.; Murphy, J.H.; Janocko, M.A.; Haller, H.E.; Litz, D.C.; Eckels, P.W.; Rogers, J.D.; Thullen, P.

1979-01-01

Two designs of 20 Mj superconducting coils are described which were developed to demonstrate the feasibility of an ohmic heating system. NbTi and Nb;sub 3;Sn superconductors were considered for both 7 tesla and 9 tesla maximum fields. Cabled and braided conductors were investigated and the braided conductor is identified as the best alternative due to its high operating current densities and because of its porosity. The coils are designed to be cryostable for bipolar operation from +7 tesla to -7 tesla and from +9 tesla to -9 tesla maximum fields within 1 sec. The structural design addresses the distribution of structure and structural materials used in the pulsed field environment. Immersion cooled (pool boil) and forced flow cooled coils are described. 2 refs

Design of a multistage 250 kJ capacitor bank for ohmic transformer of tokamak ''ADITYA''

International Nuclear Information System (INIS)

Sathyanarayana, K.; Saxena, Y.C.; John, P.I.; Pujara, H.D.; Jain, K.K.

1993-01-01

Tokamaks require toroidal loop voltage for breakdown of the neutral gas, current rise, and the flat top phase. The temporal profile of the loop voltage established by the change of flux linked by the ohmic transformer has to be a noncosine waveform. In this paper a multistage capacitor bank is described which was used to energize the ohmic transformer in tokamak ADITYA with a major radius of 0.75 m, minor radius of 0.25 m, and a toroidal field of 1.5 T at the plasma center. A combination of capacitors charged to different voltages are switched in at appropriate times, to realize an experimental demand for initial high loop voltage followed by a lower sustaining loop voltage. Theoretical prediction for the duration of the secondary loop voltage as a function of circuit parameters, for a fast bank operation of 6 kV, slow bank, 4--4.5 kV, and slow bank, 2--2.5 kV yield t 0 =1.25 mS, t 1 =4.95 mS, and t 2 =24.1 mS. These values are in close agreement to the measured values of t 0 =1.39 mS, t 1 =5.7 mS, and t 2 =23.7 mS. The trigger delays to the various capacitor bank sections are parameter dependent. To avoid repetitive adjustments in the delays, a novel scheme for consistent triggering is also highlighted

The particle fluxes in the edge plasma during discharges with improved ohmic confinement in ASDEX

International Nuclear Information System (INIS)

Verbeek, H.; Poschenrieder, W.; Fu, J.K.; Soeldner, F.X.

1989-01-01

In the recent experimental period of ASDEX a new regime of improved ohmic confinement (IOC) was discovered. So far the energy confinement time τ E increased linearly with increasing line averaged density n e up to n e = 3·10 13 cm -3 saturated, however, at higher densities. In the new IOC regime τ E increases further with increasing n e up to ∼5·10 13 cm -3 . The IOC regime is achieved for D 2 discharges only since the last modification of the ASDEX divertor which substantially increased the recycling from the divertor through the divertor slits. It also led to a reduction in gas consumption for a discharge by a factor of about 2. As it appears, the high fuelling rate required during a fast ramp-up of the plasma density leads to a transition into the Saturated Ohmic Confinememt (SOC) regime. Vice versa, the strong reduction in the external gas feed when the preprogrammed density plateau is reached seems to be essential for establishing the IOC. It is characterized by a pronounced peaking of the density profile. During the transition from the SOC to the IOC regime large variations in the signals of all edge and divertor related diagnostics are observed. In this paper we concentrate on the results of the Low Energy Neutral Particle Analyser (LENA), the sniffer probe, on the mass spectrometers measuring the divertor exhaust pressure. (author) 7 refs., 2 figs

Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

Science.gov (United States)

Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

2018-05-01

Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

Resistive switching characteristics of solution-processed Al-Zn-Sn-O films annealed by microwave irradiation

Science.gov (United States)

Kim, Tae-Wan; Baek, Il-Jin; Cho, Won-Ju

2018-02-01

In this study, we employed microwave irradiation (MWI) at low temperature in the fabrication of solution-processed AlZnSnO (AZTO) resistive random access memory (ReRAM) devices with a structure of Ti/AZTO/Pt and compared the memory characteristics with the conventional thermal annealing (CTA) process. Typical bipolar resistance switching (BRS) behavior was observed in AZTO ReRAM devices treated with as-deposited (as-dep), CTA and MWI. In the low resistance state, the Ohmic conduction mechanism describes the dominant conduction of these devices. On the other hand, the trap-controlled space charge limited conduction (SCLC) mechanism predominates in the high resistance state. The AZTO ReRAM devices processed with MWI showed larger memory windows, uniform distribution of resistance state and operating voltage, stable DC durability (>103 cycles) and stable retention characteristics (>104 s). In addition, the AZTO ReRAM devices treated with MWI exhibited multistage storage characteristics by modulating the amplitude of the reset bias, and eight distinct resistance levels were obtained with stable retention capability.

Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

Directory of Open Access Journals (Sweden)

Chung-Hua Chao

2013-01-01

Full Text Available This paper describes a fabrication and characterization of ultraviolet (UV photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002 thin film. Plasma enhanced chemical vapor deposition (PECVD system was employed to deposit ZnO (0002 thin films onto silicon substrates, and radio-frequency (RF magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two different ambients (argon and nitrogen to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, atomic force microscopy (AFM, photoluminescence (PL, UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H52] to carbon dioxide (CO2 and then combined with Pt electrode annealed at 450∘C in argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

Density scaling on n  =  1 error field penetration in ohmically heated discharges in EAST

Science.gov (United States)

Wang, Hui-Hui; Sun, You-Wen; Shi, Tong-Hui; Zang, Qing; Liu, Yue-Qiang; Yang, Xu; Gu, Shuai; He, Kai-Yang; Gu, Xiang; Qian, Jin-Ping; Shen, Biao; Luo, Zheng-Ping; Chu, Nan; Jia, Man-Ni; Sheng, Zhi-Cai; Liu, Hai-Qing; Gong, Xian-Zu; Wan, Bao-Nian; Contributors, EAST

2018-05-01

Density scaling of error field penetration in EAST is investigated with different n  =  1 magnetic perturbation coil configurations in ohmically heated discharges. The density scalings of error field penetration thresholds under two magnetic perturbation spectra are br\\propto n_e0.5 and br\\propto n_e0.6 , where b r is the error field and n e is the line averaged electron density. One difficulty in understanding the density scaling is that key parameters other than density in determining the field penetration process may also be changed when the plasma density changes. Therefore, they should be determined from experiments. The estimated theoretical analysis (br\\propto n_e0.54 in lower density region and br\\propto n_e0.40 in higher density region), using the density dependence of viscosity diffusion time, electron temperature and mode frequency measured from the experiments, is consistent with the observed scaling. One of the key points to reproduce the observed scaling in EAST is that the viscosity diffusion time estimated from energy confinement time is almost constant. It means that the plasma confinement lies in saturation ohmic confinement regime rather than the linear Neo-Alcator regime causing weak density dependence in the previous theoretical studies.

Gas sensor

International Nuclear Information System (INIS)

Dorogan, V.; Korotchenkov, Gh.; Vieru, T.; Prodan, I.

2003-01-01

The invention relates to the gas sensors on base of metal-oxide films (SnO, InO), which may be used for enviromental control, in the fireextinguishing systema etc. The gas includes an insulating substrate, an active layer, a resistive layer with ohmic contacts. The resistive layer has two or more regions with dofferent resistances , and on the active layer are two or more pairs of ohmic contacts

Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor

International Nuclear Information System (INIS)

Chen, Li-Yang; Tsai, Tsung-Han; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng

2008-01-01

The reliability-related properties of an InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), using the non-annealed ohmic-recess (NAOR) approach, are studied and demonstrated. The NAOR device shows significantly improved dc and radio frequency (RF) performance over a wide temperature range (300–500 K). With a 1 × 100 µm 2 gate-dimension MHEMT by the NAOR approach, the considerably improved thermal stability and dc performances, including lower temperature variation coefficients on turn-on voltage (−1.38 mV K −1 ) and gate-drain breakdown voltage (−30.4 mV K −1 ), and on-resistance (2.41 × 10 −3 Ω mm K −1 ), are obtained as the temperature is increased from 300 to 500 K. For RF characteristics, the NAOR device also shows a low degradation rate on drain saturation current operating regimes (−5.52 × 10 −4 K −1 ) as the temperature is increased from 300 to 400 K. In addition, based on the lifetime tests, an activation energy of 1.33 eV and a projected median lifetime of 1.2 × 10 7 h at T ch = 125 °C are obtained for the NAOR MHEMT

Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

International Nuclear Information System (INIS)

Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

2007-01-01

We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

Current simulation of symmetric contacts on CdTe

International Nuclear Information System (INIS)

Ruzin, A.

2011-01-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Current simulation of symmetric contacts on CdTe

Energy Technology Data Exchange (ETDEWEB)

Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

2011-12-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Directory of Open Access Journals (Sweden)

Shuxiang Wu

2013-12-01

Full Text Available Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

DEFF Research Database (Denmark)

Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

2002-01-01

We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

Bistable resistive memory behavior in gelatin-CdTe quantum dot composite film

Science.gov (United States)

Vallabhapurapu, Sreedevi; Rohom, Ashwini; Chaure, N. B.; Du, Shengzhi; Srinivasan, Ananthakrishnan

2018-05-01

Bistable memory behavior has been observed for the first time in gelatin type A thin film dispersed with functionalized CdTe quantum dots. The two terminal device with the polymer nanocomposite layer sandwiched between an indium tin oxide coated glass plate and an aluminium top electrode performs as a bistable resistive random access memory module. Butterfly shaped (O-shaped with a hysteresis in forward and reverse sweeps) current-voltage response is observed in this device. The conduction mechanism leading to the bistable electrical switching has been deduced to be a combination of ohmic and electron hopping.

Poloidal ohmic heating in a multipole

International Nuclear Information System (INIS)

Holly, D.J.; Prager, S.C.; Sprott, J.C.

1982-07-01

The feasibility of using poloidal currents to heat plasmas confined by a multipole field has been examined experimentally in Tokapole II, operating the machine as a toroidal octupole. The plasma resistivity ranges from Spitzer to about 1500 times Spitzer resistivity, as predicted by mirror-enhanced resistivity theory. This allows large powers (approx. 2 MW) to be coupled to the plasma at modest current levels. However, the confinement time is reduced by the heating, apparently due to a combination of the input power location (near the walls of the vacuum tank) and fluctuation-enhanced transport. Current-driven drift instabilities and resistive MHD instabilities appear to be the most likely causes for the fluctuations

Design of constant current charging power supply for J-TEXT ohmic field capacitor banks

International Nuclear Information System (INIS)

Lv Shudong; Zhang Ming; Rao Bo; Yu Kexun; Yang Cheng

2014-01-01

The charging characteristic of the capacitor charging power supply was analyzed with practical series resonant topology. The method that setting two current taps and regulating PWM switching frequency was putted forward with close loop controlling algorithm to charge the multi-group capacitor banks with constant current. A capacitor charging power supply with the max output current 6.5 A and the max output voltage 2000 V is designed. Experimental results show that, this power supply can charge the four capacitor banks to any four different voltages in 1 minute with charging accuracy less than 1%, and meet the requirements of J-TEXT ohmic field power system. (authors)

Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

Energy Technology Data Exchange (ETDEWEB)

Shaygan, Mehrdad; Otto, Martin; Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany); Chavarin, Carlos A. [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany); Innovations for High Performance Microelectronics, IHP GmbH, Frankfurt (Oder) (Germany); Bacher, Gerd; Mertin, Wolfgang [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany)

2017-11-15

The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance down to 130 Ωμm. The contact resistance is found to be stable for annealing temperatures up to 150 C enabling further device processing. Using this contact scheme for edge contacts, a field effect transistor based on CVD graphene with a high transconductance of 0.63 mS/μm at 1 V bias voltage is fabricated. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The role of contact resistance in graphene field-effect devices

Science.gov (United States)

Giubileo, Filippo; Di Bartolomeo, Antonio

2017-08-01

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.

Elucidating effects of cell architecture, electrode material, and solution composition on overpotentials in redox flow batteries

International Nuclear Information System (INIS)

Pezeshki, Alan M.; Sacci, Robert L.; Delnick, Frank M.; Aaron, Douglas S.; Mench, Matthew M.

2017-01-01

An improved method for quantitative measurement of the charge transfer, finite diffusion, and ohmic overpotentials in redox flow batteries using electrochemical impedance spectroscopy is presented. The use of a pulse dampener in the hydraulic circuit enables the collection of impedance spectra at low frequencies with a peristaltic pump, allowing the measurement of finite diffusion resistances at operationally relevant flow rates. This method is used to resolve the rate-limiting processes for the V 2+ /V 3+ redox couple on carbon felt and carbon paper electrodes in the vanadium redox flow battery. Carbon felt was limited by both charge transfer and ohmic resistance, while carbon paper was limited by charge transfer, finite diffusion, and ohmic resistances. The influences of vanadium concentration and flow field design also are quantified.

The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films

Science.gov (United States)

Rowtu, Srinu; Sangani, L. D. Varma; Krishna, M. Ghanashyam

2018-02-01

Resistive switching behavior by engineering the electrode work function and band gap of ZnTe thin films is demonstrated. The device structures Au/ZnTe/Au, Au/ZnTe/Ag, Al/ZnTe/Ag and Pt/ZnTe/Ag were fabricated. ZnTe was deposited by thermal evaporation and the stoichiometry and band gap were controlled by varying the source-substrate distance. Band gap could be varied between 1.0 eV to approximately 4.0 eV with the larger band gap being attributed to the partial oxidation of ZnTe. The transport characteristics reveal that the low-resistance state is ohmic in nature which makes a transition to Poole-Frenkel defect-mediated conductivity in the high-resistance states. The highest R off-to- R on ratio achieved is 109. Interestingly, depending on stoichiometry, both unipolar and bipolar switching can be realized.

Transient snakes in an ohmic plasma associated with a minor disruption in the HT-7 Tokamak

Energy Technology Data Exchange (ETDEWEB)

Mao, Songtao; Xu, Liqing; Hu, Liqun; Chen, Kaiyun [Chinese Academy of Sciences, Hefei (China)

2014-05-15

A transient burst (∼2 ms, an order of the fast-particle slowdown timescale) of a spontaneous snake is observed for the first time in a HT-7 heavy impurity ohmic plasma. The features of the low-Z impurity snake are presented. The flatten electron profile due to the heavy impurity reveals the formation of a large magnetic island. The foot of the impurity accumulation is consistent with the location of the transient snake. The strong frequency-chirping behaviors and the spatial structures of the snake are also presented.

Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell

International Nuclear Information System (INIS)

Pan, R.K.; Zhang, T.J.; Wang, J.Y.; Wang, J.Z.; Wang, D.F.; Duan, M.G.

2012-01-01

The 80-nm-thickness BaTiO 3 (BT) thin film was prepared on the Pt/Ti/SiO 2 /Si substrate by the RF magnetron sputtering technique. The Pt/BT/Pt/Ti/SiO 2 /Si structure was investigated using X-ray diffraction and scanning electron microscopy. The current–voltage characteristic measurements were performed. The bipolar resistive switching behavior was found in the Pt/BT/Pt cell. The current–voltage curves were well fitted in different voltage regions at the high resistance state (HRS) and the low resistance state (LRS), respectively. The conduction mechanisms are concluded to be Ohmic conduction and Schottky emission at the LRS, while space-charge-limited conduction and Poole–Frenkel emission at the HRS. The electroforming and switching processes were explained in terms of the valence change mechanism, in which oxygen vacancies play a key role in forming conducting paths. - Highlights: ►Pt/BaTiO 3 /Pt cell shows the bipolar resistive switching behavior. ►The current–voltage curves were well fitted for different conduction mechanisms. ►The electroforming and switching processes were explained.

Transport simulations of ohmic ignition experiment: IGNITEX

International Nuclear Information System (INIS)

Uckan, N.A.; Howe, H.C.

1987-01-01

The IGNITEX device, proposed by Rosenbluth et al., is a compact, super-high-field, high-current, copper-coil tokamak envisioned to reach ignition with ohmic (OH) heating alone. Several simulations of IGNITEX were made with a 0-D global model and with the 1-D PROCTR transport code. It is shown that OH ignition is a sensitive function of the assumptions about density profile, wall reflectivity of synchrotron radiation, impurity radiation, plasma edge conditions, and additional anomalous losses. In IGNITEX, OH ignition is accessible with nearly all scalings based on favorable OH confinement (such as neo-Alcator). Also, OH ignition appears to be accessible for most (not all) L-mode scalings (such as Kaye-Goldston), provided that the density profile is not too broad (parabolic or more peaked profiles are needed), Z/sub eff/ is not too large (≤2), and anomalous radiation and alpha losses and/or other enhanced transport losses (/eta//sub i/ modes, edge convective energy losses, etc.) are not present. In IGNITEX, because the figure-of-merit parameters (aB 0 2 /q* /approximately/ IB 0 , etc.) are large, ignition can be accessed (either with OH heating alone or with the aid of a small amount of auxiliary power) at relatively low beta, far from stability limits. Once the plasma is ignited, thermal runaway is prevented naturally by a combination of increased synchrotron radiation, burnout of the fuel in the plasma core and replacement by thermal alphas, and the reduction in the thermal plasma confinement assumed in L-mode-like scalings. 12 refs., 5 figs., 1 tab

Transport simulations of ohmic ignition experiment: IGNITEX

International Nuclear Information System (INIS)

Uckan, N.A.; Howe, H.C.

1987-12-01

The IGNITEX device, proposed by Rosenbluth et al., is a compact, super-high-field, high-current, copper-coil tokamak envisioned to reach ignition with ohmic (OH) heating alone. Several simulations of IGNITEX were made with a 0-D global model and with the 1-D PROCTR transport code. It is shown that OH ignition is a sensitive function of the assumptions about density profile, wall reflectivity of synchrotron radiation, impurity radiation, plasma edge conditions, and additional anomalous losses. In IGNITEX, OH ignition is accessible with nearly all scalings based on favorable OH confinement (such as neo-Alcator). Also, OH ignition appears to be accessible for most (not all) L-mode scalings (such as Kaye-Goldston), provided that the density profile is not too broad (parabolic or more peaked profiles are needed), Z/sub eff/ is not too large, and anomalous radiation and alpha losses and/or other enhanced transport losses (eta/sub i/ modes, edge convective energy losses, etc.) are not present. In IGNITEX, because the figure-of-merit parameters are large, ignition can be accessed (either with OH heating alone or with the aid of a small amount of auxiliary power) at relatively low beta, far from stability limits. Once the plasma is ignited, thermal runaway is prevented naturally by a combination of increased synchrotron radiation, burnout of the fuel in the plasma core and replacement by thermal alphas, and the reduction in the thermal plasma confinement assumed in L-mode-like scalings. 12 refs., 5 figs., 1 tab

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

Energy Technology Data Exchange (ETDEWEB)

Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

Elucidating effects of cell architecture, electrode material, and solution composition on overpotentials in redox flow batteries

Energy Technology Data Exchange (ETDEWEB)

Pezeshki, Alan M. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Sacci, Robert L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Delnick, Frank M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Aaron, Douglas S. [Univ. of Tennessee, Knoxville, TN (United States); Mench, Matthew M. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-01-16

Here, an improved method for quantitative measurement of the charge transfer, finite diffusion, and ohmic overpotentials in redox flow batteries using electrochemical impedance spectroscopy is presented. The use of a pulse dampener in the hydraulic circuit enables the collection of impedance spectra at low frequencies with a peristaltic pump, allowing the measurement of finite diffusion resistances at operationally relevant flow rates. This method is used to resolve the rate-limiting processes for the V²⁺/V³⁺ redox couple on carbon felt and carbon paper electrodes in the vanadium redox flow battery. Carbon felt was limited by both charge transfer and ohmic resistance, while carbon paper was limited by charge transfer, finite diffusion, and ohmic resistances. The influences of vanadium concentration and flow field design also are quantified.

Evolution of the Turbulence Radial Wavenumber Spectrum near the L-H Transition in NSTX Ohmic Discharges

Energy Technology Data Exchange (ETDEWEB)

Kubota, S.; Peebles, W.A., E-mail: skubota@ucla.edu [UCLA, Los Angeles (United States); Bush, C. E.; Maingi, R. [Oak Ridge National Laboratory, Oak Ridge (United States); Zweben, S. J.; Bell, R.; Crocker, N.; Diallo, A.; Kaye, S.; LeBlanc, B. P.; Park, J. K.; Ren, Y. [Princeton Plasma Physics Laboratory, Princeton University, Princeton (United States); Maqueda, R. J. [Nova Photonics, Princeton (United States); Raman, R. [University of Washington, Seattle (United States)

2012-09-15

Full text: The measurement of radially extended meso-scale structures such as zonal flows and streamers, as well as the underlying microinstabilities driving them, is critical for understanding turbulence-driven transport in plasma devices. In particular, the shape and evolution of the radial wavenumber spectrum indicate details of the nonlinear spectral energy transfer, the spreading of turbulence, as well as the formation of transport barriers. In the National Spherical Torus Experiment (NSTX), the FMCW backscattering diagnostic is used to probe the turbulence radial wavenumber spectrum (k{sub r} = 0 - 22 cm-1 ) across the outboard minor radius near the L- to H-mode transition in Ohmic discharges. During the L-mode phase, a broad spectral component (k{sub r} {approx} 2 - 10 cm{sup -1} ) extends over a significant portion of the edge-core from R = 120 to 155 cm ({rho} = 0.4 - 0.95). At the L-H transition, turbulence is quenched across the measurable k{sub r} range at the ETB location, where the radial correlation length drops from {approx} 1.5 - 0.5 cm. The k{sub r} spectrum away from the ETB location is modified on a time scale of tens of microseconds, indicating that nonlocal turbulence dynamics are playing a strong role. Close to the L-H transition, oscillations in the density gradient and edge turbulence quenching become highly correlated. These oscillations are also present in Ohmic discharges without an L-H transition, but are far less frequent. Similar behavior is also seen near the L-H transition in NB-heated discharges. (author)

Initial Thomson Scattering Survey of Local Helicity Injection and Ohmic Plasmas at the Pegasus Toroidal Experiment

Science.gov (United States)

Schlossberg, D. J.; Bodner, G. M.; Bongard, M. W.; Fonck, R. J.; Winz, G. R.

2014-10-01

A multipoint Thomson scattering diagnostic has recently been installed on the Pegasus ST. The system utilizes a frequency-doubled Nd:YAG laser (λ0 ~ 532 nm), spectrometers with volume phase holographic gratings, and a gated, intensified CCD camera. It provides measurements of Te and ne at 8 spatial locations for each spectrometer once per discharge. A new multiple aperture and beam dump system has been implemented to mitigate interference from stray light. This system has provided initial measurements in the core region of plasmas initiated by local helicity injection (LHI), as well as conventional Ohmic L- and H-mode discharges. Multi-shot averages of low-density (ne ~ 3 ×1018 m-3) , Ip ~ 0 . 1 MA LHI discharges show central Te ~ 75 eV at the end of the helicity injection phase. Ip ~ 0 . 13 MA Ohmic plasmas at moderate densities (ne ~ 2 ×1019 m-3) have core Te ~ 150 eV in L-mode. Generally, these plasmas do not reach transport equilibrium in the short 25 ms pulse length available. After an L-H transition, strong spectral broadening indicates increasing Te, to values above the range of the present spectrometer system with a high-dispersion VPH grating. Near-term system upgrades will focus on deploying a second spectrometer, with a lower-dispersion grating capable of measuring the 0.1-1.0 keV range. The second spectrometer system will also increase the available number of spatial channels, enabling study of H-mode pedestal structure. Work supported by US DOE Grant DE-FG02-96ER54375.

Evolution of the electron temperature profile of ohmically heated plasmas in TFTR

International Nuclear Information System (INIS)

Taylor, G.; Efthimion, P.C.; Arunasalam, V.

1985-08-01

Blackbody electron cyclotron emission was used to ascertain and study the evolution and behavior of the electron temperature profile in ohmically heated plasmas in the Tokamak Fusion Test Reactor (TFTR). The emission was measured with absolutely calibrated millimeter wavelength radiometers. The temperature profile normalized to the central temperature and minor radius is observed to broaden substantially with decreasing limiter safety factor q/sub a/, and is insensitive to the plasma minor radius. Sawtooth activity was seen in the core of most TFTR discharges and appeared to be associated with a flattening of the electron temperature profile within the plasma core where q less than or equal to 1. Two types of sawtooth behavior were identified in large TFTR plasmas (minor radius, a less than or equal to 0.8 m) : a typically 35 to 40 msec period ''normal'' sawtooth, and a ''compound'' sawtooth with 70 to 80 msec period

Transparent resistive switching memory using aluminum oxide on a flexible substrate

International Nuclear Information System (INIS)

Yeom, Seung-Won; Kim, Tan-Young; Ha, Hyeon Jun; Ju, Byeong-Kwon; Shin, Sang-Chul; Shim, Jae Won; Lee, Yun-Hi

2016-01-01

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al 2 O 3 -based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400–800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al 2 O 3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole–Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al 2 O 3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices. (letter)

Transparent resistive switching memory using aluminum oxide on a flexible substrate

Science.gov (United States)

Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

2016-02-01

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

Bipolar resistive switching properties of Hf{sub 0.5}Zr{sub 0.5}O{sub 2} thin film for flexible memory applications

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhipeng; Zhu, Jun; Zhou, Yunxia; Liu, Xingpeng [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu (China)

2018-01-15

An Au/Ni/Hf{sub 0.5}Zr{sub 0.5}O{sub 2}/Au flexible memory device fabricated on a polyethylene terephthalate substrate was studied for flexible resistive random access memory applications. A typical bipolar resistive switching behavior was revealed with an OFF/ON ratio of approximately 15. The reproducibility and uniformity were investigated using 100 repetitive write/erase cycles. The retention property did not degrade for up to 5 x 10{sup 4} s, and the resistive switching properties did not degrade even under bending conditions, which indicated good mechanical flexibility. The current-voltage characteristics of the memory device show a Poole-Frenkel emission conduction mechanism in the high-voltage region in the high-resistance state, while in the low-voltage region, the Ohmic contact and space charge limit current responded to the low-resistance state and high-resistance state, respectively. Combined with the conductance mechanism, the resistive switching behavior is attributed to conductive filaments forming and rupturing due to oxygen vacancies migrating under the external driving electric field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

Science.gov (United States)

Prakash, Ravi; Kaur, Davinder

2018-05-01

The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

Science.gov (United States)

Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

2018-05-01

A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

Lack of dependence on resonant error field of locked mode island size in ohmic plasmas in DIII-D

Science.gov (United States)

La Haye, R. J.; Paz-Soldan, C.; Strait, E. J.

2015-02-01

DIII-D experiments show that fully penetrated resonant n = 1 error field locked modes in ohmic plasmas with safety factor q95 ≳ 3 grow to similar large disruptive size, independent of resonant error field correction. Relatively small resonant (m/n = 2/1) static error fields are shielded in ohmic plasmas by the natural rotation at the electron diamagnetic drift frequency. However, the drag from error fields can lower rotation such that a bifurcation results, from nearly complete shielding to full penetration, i.e., to a driven locked mode island that can induce disruption. Error field correction (EFC) is performed on DIII-D (in ITER relevant shape and safety factor q95 ≳ 3) with either the n = 1 C-coil (no handedness) or the n = 1 I-coil (with ‘dominantly’ resonant field pitch). Despite EFC, which allows significantly lower plasma density (a ‘figure of merit’) before penetration occurs, the resulting saturated islands have similar large size; they differ only in the phase of the locked mode after typically being pulled (by up to 30° toroidally) in the electron diamagnetic drift direction as they grow to saturation. Island amplification and phase shift are explained by a second change-of-state in which the classical tearing index changes from stable to marginal by the presence of the island, which changes the current density profile. The eventual island size is thus governed by the inherent stability and saturation mechanism rather than the driving error field.

Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices

International Nuclear Information System (INIS)

Redondo-Cubero, A.; Ynsa, M.D.; Romero, M.F.; Alves, L.C.; Muñoz, E.

2013-01-01

The homogeneity of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN devices was analyzed as a function of the thickness of the Ti barrier (30 nm 50 nm, although several compositional deficiencies were identified in the distribution maps obtained with the ion microprobe, including the formation of craters. A clear interplay between Ti and Au was found, suggesting the relevance of lateral flows during the rapid thermal annealing

D III-D divertor target heat flux measurements during Ohmic and neutral beam heating

International Nuclear Information System (INIS)

Hill, D.N.; Petrie, T.; Mahdavi, M.A.; Lao, L.; Howl, W.

1988-01-01

Time resolved power deposition profiles on the D III-D divertor target plates have been measured for Ohmic and neutral beam injection heated plasmas using fast response infrared thermography (τ ≤ 150 μs). Giant Edge Localized Modes have been observed which punctuate quiescent periods of good H-mode confinement and deposit more than 5% of the stored energy of the core plasma on the divertor armour tiles on millisecond time-scales. The heat pulse associated with these events arrives approximately 0.5 ms earlier on the outer leg of the divertor relative to the inner leg. The measured power deposition profiles are displaced relative to the separatrix intercepts on the target plates, and the peak heat fluxes are a function of core plasma density. (author). Letter-to-the-editor. 11 refs, 7 figs

Benchmarking of electrolyte mass transport in next generation lithium batteries

Directory of Open Access Journals (Sweden)

Jonas Lindberg

2017-12-01

Full Text Available Beyond conductivity and viscosity, little is often known about the mass transport properties of next generation lithium battery electrolytes, thus, making performance estimation uncertain when concentration gradients are present, as conductivity only describes performance in the absence of these gradients. This study experimentally measured the diffusion resistivity, originating from voltage loss due to a concentration gradient, together with the ohmic resistivity, obtained from ionic conductivity measurements, hence, evaluating electrolytes both with and without the presence of concentration gradients. Under galvanostatic conditions, the concentration gradients, of all electrolytes examined, developed quickly and the diffusion resistivity rapidly dominated the ohmic resistivity. The electrolytes investigated consisted of lithium salt in: room temperature ionic liquids (RTIL, RTIL mixed organic carbonates, dimethyl sulfoxide (DMSO, and a conventional Li-ion battery electrolyte. At steady state the RTIL electrolytes displayed a diffusion resistivity ~ 20 times greater than the ohmic resistivity. The DMSO-based electrolyte showed mass transport properties similar to the conventional Li-ion battery electrolyte. In conclusion, the results presented in this study show that the diffusion polarization must be considered in applications where high energy and power density are desired.

Ohm's law revision

OpenAIRE

Cheremisin, M. V.

1999-01-01

The standard ohmic measurements by means of two extra leads contain an additional thermal correction to resistance. The current results in heating(cooling) at first(second) sample contact due to Peltier effect. The contacts temperatures are different. The measured voltage is the sum of the ohmic voltage swing and Peltier effect induced thermopower which is linear on current. As a result, the thermal correction to resistance measured exists at $I\\to 0$. The correction should be in comparison w...

Identification of electrical resistance of fresh state concrete for nondestructive setting process monitoring

International Nuclear Information System (INIS)

Shin, Sung Woo

2015-01-01

Concrete undergoes significant phase changes from liquid to solid states as hydration progresses. These phase changes are known as the setting process. A liquid state concrete is electrically conductive because of the presence of water and ions. However, since the conductive elements in the liquid state of concrete are consumed to produce non-conductive hydration products, the electrical conductivity of hydrating concrete decreases during the setting process. Therefore, the electrical properties of hydrating concrete can be used to monitor the setting process of concrete. In this study, a parameter identification method to estimate electrical parameters such as ohmic resistance of concrete is proposed. The effectiveness of the proposed method for monitoring the setting process of concrete is experimentally validated

Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

Science.gov (United States)

Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

2018-05-01

We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

Magnetic Shear and Transport in ECRH Discharges of the TJ-II under Ohmic Induction

Energy Technology Data Exchange (ETDEWEB)

Lopez-Bruna, D.; Castejon, F.; Romero, J. A.; Estrada, T.; Medina, F.; Ochando, M.; Lopez-Fraguas, A.; Ascasibar, E.; Herranz, J.; Sanchez, E.; Luna, E. de la; Pastor, I.

2006-07-01

TJ-II is ha heliac type stellarator characterised by high, but almost constant, vacuum rotational transform throughout the confining volume. In ECRH plasmas, moderate induced ohmic currents (negligible heating and modification of the magnetic field nodules) are enough to disregard the bootstrap contribution, which allows us performing a fair calculation of the evolution of the rotational transform. We use the loop voltage diagnostic to estimate the plasma electrical conductivity. Then the evolution of the rotational transform and shear is related to changes in the profiles of electron and thermal diffusivities: negative shear correlates with decreasing diffusivities in the region of steepest density gradient; transport increases toward zero shear but the achieved positive values are too small to draw conclusions. The radial sweeping of lowest order rational magnetic surfaces does not determine the observed trends in transport. (Author)43 refs.

Magnetic Shear and Transport in ECRH Discharges of the TJ-II under Ohmic Induction

International Nuclear Information System (INIS)

Lopez-Bruna, D.; Castejon, F.; Romero, J. A.; Estrada, T.; Medina, F.; Ochando, M.; Lopez-Fraguas, A.; Ascasibar, E.; Herranz, J.; Sanchez, E.; Luna, E. de la; Pastor, I.

2006-01-01

TJ-II is ha heliac type stellarator characterised by high, but almost constant, vacuum rotational transform throughout the confining volume. In ECRH plasmas, moderate induced ohmic currents (negligible heating and modification of the magnetic field nodules) are enough to disregard the bootstrap contribution, which allows us performing a fair calculation of the evolution of the rotational transform. We use the loop voltage diagnostic to estimate the plasma electrical conductivity. Then the evolution of the rotational transform and shear is related to changes in the profiles of electron and thermal diffusivities: negative shear correlates with decreasing diffusivities in the region of steepest density gradient; transport increases toward zero shear but the achieved positive values are too small to draw conclusions. The radial sweeping of lowest order rational magnetic surfaces does not determine the observed trends in transport. (Author)43 refs

Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

International Nuclear Information System (INIS)

Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

2014-01-01

The electrical characterization of HfO 2 /ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO 2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO 2 /ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

Effects of clamping force on the water transport and performance of a PEM (proton electrolyte membrane) fuel cell with relative humidity and current density

International Nuclear Information System (INIS)

Cha, Dowon; Ahn, Jae Hwan; Kim, Hyung Soon; Kim, Yongchan

2015-01-01

The clamping force should be applied to a proton electrolyte membrane (PEM) fuel cell due to its structural characteristics. The clamping force affects the ohmic and mass transport resistances in the PEM fuel cell. In this study, the effects of the clamping force on the water transport and performance characteristics of a PEM fuel cell are experimentally investigated with variations in the relative humidity and current density. The water transport characteristics were analyzed by calculating the net drag coefficient. The ohmic resistance decreased with the increase in the clamping force due to the reduced contact resistance and more even membrane hydration. However, the mass transport resistance increased with the increase in the clamping force due to the gas diffusion layer compression. The net drag coefficient decreased with the increase in the clamping force due to high water back-diffusion. Additionally, the relationship between the total resistance and the net drag coefficient was investigated. - Highlights: • Effects of clamping force on the performance of a PEM fuel cell are investigated. • Water transport characteristics are analyzed using net drag coefficient. • Ohmic resistance decreased with clamping force, but mass transport resistance increased. • Net drag coefficient decreased with the increase in clamping force. • Total resistance was significantly degraded for a net drag coefficient below 0.2.

Efros-Shklovskii variable range hopping and nonlinear transport in 1 T /1 T'-MoS2

Science.gov (United States)

Papadopoulos, N.; Steele, G. A.; van der Zant, H. S. J.

2017-12-01

We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n -butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.

Composition-ratio influence on resistive switching behavior of solution-processed InGaZnO-based thin-film.

Science.gov (United States)

Hwang, Yeong-Hyeon; Hwang, Inchan; Cho, Won-Ju

2014-11-01

The influence of composition ratio on the bipolar resistive switching behavior of resistive switching memory devices based on amorphous indium-gallium-zinc-oxide (a-IGZO) using the spin-coating process was investigated. To study the stoichiometric effects of the a-IGZO films on device characteristics, four devices with In/Ga/Zn stoichiometries of 1:1:1, 3:1:1, 1:3:1, and 1:1:3 were fabricated and characterized. The 3:1:1 film showed an ohmic behavior and the 1:1:3 film showed a rectifying switching behavior. The current-voltage characteristics of the a-IGZO films with stoichiometries of 1:1:1 and 1:3:1, however, showed a bipolar resistive memory switching behavior. We found that the three-fold increase in the gallium content ratio reduces the reset voltage from -0.9 to - 0.4 V and enhances the current ratio of high to low resistive states from 0.7 x 10(1) to 3 x 10(1). Our results show that the increase in the Ga composition ratio in the a-IGZO-based ReRAM cells effectively improves the device performance and reliability by increasing the initial defect density in the a-IGZO films.

In-situ electric resistance measurements and annealing effects of graphite exposed to swift heavy ions

International Nuclear Information System (INIS)

Fernandes, Sandrina; Pellemoine, Frederique; Tomut, Marilena; Avilov, Mikhail; Bender, Markus; Boulesteix, Marine; Krause, Markus; Mittig, Wolfgang; Schein, Mike; Severin, Daniel; Trautmann, Christina

2013-01-01

To study the suitability of using graphite as material for high-power targets for rare isotope production at the future Facility for Rare Isotope Beams (FRIB) in the USA and at the Facility for Antiproton and Ion Research (FAIR) in Germany, thin foils of polycrystalline graphite were exposed to 8.6-MeV/u Au ions reaching a maximum fluence of 1 × 10 15 ions/cm 2 . Foil irradiation temperatures of up to 1800 °C were obtained by ohmic heating. In-situ monitoring of the electrical resistance of the graphite foils during and after irradiation provided information on beam-induced radiation damage. The rate of electrical resistance increase as a function of fluence was found to decrease with increasing irradiation temperature, indicating a more efficient annealing of the irradiation-produced defects. This is corroborated by the observation that graphite foils irradiated at temperatures below about 800 °C showed cracks and pronounced deformations, which did not appear on the samples irradiated at higher temperatures

High performance Ni-Sm{sub 0.15}Ce{sub 0.85}O{sub 2-{delta}} cermet anodes for intermediate temperature solid oxide fuel cells using LaGaO{sub 3} based oxide electrolytes

Energy Technology Data Exchange (ETDEWEB)

Wang, Shizhong; Takita, Yusaku [Department of Applied Chemistry, Faculty of Engineering, Oita University, Dannoharu 700, Oita 870-1192 (Japan); Ando, Masaki [Materials Production Course, Graduate School of Engineering, Oita University, Dannoharu 700, Oita 870-1192 (Japan); Ishihara, Tatsumi [Department of Applied Chemistry, Faculty of Engineering, Kyushu University, Hakozaki 6-10-1, Higashi-ku, Fukuoka 812-8581 (Japan)

2004-10-29

Effect of the composition and synthesizing approaches on the performance of Ni-15 mol% Sm{sup 3+} doped CeO{sub 2} (Sm{sub 0.15}Ce{sub 0.85}O{sub 2-{delta}}, SDC) composite anodes were studied. The results showed that the addition of SDC into Ni significantly improved the performance of Ni anode mainly by reducing the ohmic resistance of the cell and the overpotential at anode/electrolyte interface. The introduction of SDC into Ni created more active sites for H{sub 2} oxidation; however, it also increased the activation energy of the process at the same time. Therefore, the anodic overpotential of Ni-SDC composite electrode was higher than pure Ni at low reaction temperatures (873 K), while lower than that of pure Ni at 1073 K. Further experiments showed that the activities of Ni-SDC composite electrodes showed strong dependency on the synthesizing approaches. The electrodes prepared with impregnation methods exhibited a much higher activity compared with the electrodes prepared with solid-state reaction due to the reduced ohmic resistance. The low ohmic resistance of the cells using Ni-SDC anodes prepared with impregnation method is due to the improved distribution of Ni and SDC in the green powder of anode. An equal distribution of Ni and SDC is essential to minimize the reaction between Ni and strontium and magnesium doped lanthanum gallate (LSGM), and decrease the ohmic resistance.

Formation of an internal transport barrier in the ohmic H-mode in the TUMAN-3M tokamak

International Nuclear Information System (INIS)

Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Zhubr, N.A.; Kornev, V.A.; Krikunov, S.V.; Lebedev, S.V.; Levin, L.S.; Razdobarin, G.T.; Rozhdestvensky, V.V.; Smirnov, A.I.; Tukachinsky, A.S.; Yaroshevich, S.P.

2000-01-01

In experiments on studying the ohmic H-mode in the TUMAN-3M tokamak, it is found that, in high-current (I p ∼ 120-170 kA) discharges, a region with high electron-temperature and density gradients is formed in the plasma core. In this case, the energy confinement time τ E attains 9-18 ms, which is nearly twice as large as that predicted by the ELM-free ITER-93H scaling. This is evidence that the internal transport barrier in a plasma can exist without auxiliary heating. Calculations of the effective thermal diffusivity by the ASTRA transport code demonstrate a strong suppression of heat transport in the region where the temperature and density gradients are high

Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

2007-01-01

Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

On the breakdown modes and parameter space of Ohmic Tokamak startup

Science.gov (United States)

Peng, Yanli; Jiang, Wei; Zhang, Ya; Hu, Xiwei; Zhuang, Ge; Innocenti, Maria; Lapenta, Giovanni

2017-10-01

Tokamak plasma has to be hot. The process of turning the initial dilute neutral hydrogen gas at room temperature into fully ionized plasma is called tokamak startup. Even with over 40 years of research, the parameter ranges for the successful startup still aren't determined by numerical simulations but by trial and errors. However, in recent years it has drawn much attention due to one of the challenges faced by ITER: the maximum electric field for startup can't exceed 0.3 V/m, which makes the parameter range for successful startup narrower. Besides, this physical mechanism is far from being understood either theoretically or numerically. In this work, we have simulated the plasma breakdown phase driven by pure Ohmic heating using a particle-in-cell/Monte Carlo code, with the aim of giving a predictive parameter range for most tokamaks, even for ITER. We have found three situations during the discharge, as a function of the initial parameters: no breakdown, breakdown and runaway. Moreover, breakdown delay and volt-second consumption under different initial conditions are evaluated. In addition, we have simulated breakdown on ITER and confirmed that when the electric field is 0.3 V/m, the optimal pre-filling pressure is 0.001 Pa, which is in good agreement with ITER's design.

Radiation losses and global energy balance for Ohmically heated discharges in ASDEX

International Nuclear Information System (INIS)

Mueller, E.R.; Behringer, K.; Niedermeyer, H.

1982-01-01

Global energy balance, radiation profiles and dominant impurity radiation sources are compared for Ohmically heated limiter and divertor discharges in the ASDEX tokamak. In discharges with a poloidal stainless-steel limiter, total radiation from the plasma is the dominant energy loss channel. The axisymmetric divertor reduces this volume-integrated radiation to 30-35% of the heating power and additional Ti-gettering halves it again to 10-15%. Local radiation losses in the plasma centre, which are mainly due to the presence of iron impurity ions, are reduced by about one order of magnitude. In high-current (Isub(p) = 400 kA) and high-density (nsub(e)-bar = 6 x 10 13 cm -3 ) ungettered divertor discharges, up to 55% of the heating power is dumped into a cold-gas target inside the divertor chambers. The bolometrically detected volume power losses in the chambers can mainly be attributed to neutral hydrogen atoms with kinetic energies of a few eV. In this parameter range, the divertor plasma is dominated by inelastic molecular and atomic processes, the main process being Franck-Condon dissociation of H 2 molecules. (author)

The isotope effect on divertor conditions and neutral pumping in horizontal divertor configurations in JET-ILW Ohmic plasmas

Directory of Open Access Journals (Sweden)

J. Uljanovs

2017-08-01

Full Text Available Understanding the impact of isotope mass and divertor configuration on the divertor conditions and neutral pressures is critical for predicting the performance of the ITER divertor in DT operation. To address this need, ohmically heated hydrogen and deuterium plasma experiments were conducted in JET with the ITER-like wall in varying divertor configurations. In this study, these plasmas are simulated with EDGE2D-EIRENE outfitted with a sub-divertor model, to predict the neutral pressures in the plenum with similar fashion to the experiments. EDGE2D-EIRENE predictions show that the increased isotope mass results in up to a 25% increase in peak electron densities and 15% increase in peak ion saturation current at the outer target in deuterium when compared to hydrogen for all horizontal divertor configurations. Indicating that a change from hydrogen to deuterium as main fuel decreases the neutral mean free path, leading to higher neutral density in the divertor. Consequently, this mechanism also leads to higher neutral pressures in the sub-divertor. The experimental data provided by the hydrogen and deuterium ohmic discharges shows that closer proximity of the outer strike point to the pumping plenum results in a higher neutral pressure in the sub-divertor. The diaphragm capacitance gauge pressure measurements show that a two to three-fold increase in sub-divertor pressure was achieved in the corner and nearby horizontal configurations compared to the far-horizontal configurations, likely due to ballistic transport (with respect to the plasma facing components of the neutrals into the sub-divertor. The corner divertor configuration also indicates that a neutral expansion occurs during detachment, resulting in a sub-divertor neutral density plateau as a function of upstream density at the outer-mid plane.

Microbial desalination cells packed with ion-exchange resin to enhance water desalination rate.

Science.gov (United States)

Morel, Alexandre; Zuo, Kuichang; Xia, Xue; Wei, Jincheng; Luo, Xi; Liang, Peng; Huang, Xia

2012-08-01

A novel configuration of microbial desalination cell (MDC) packed with ion-exchange resin (R-MDC) was proposed to enhance water desalination rate. Compared with classic MDC (C-MDC), an obvious increase in desalination rate (DR) was obtained by R-MDC. With relatively low concentration (10-2 g/L NaCl) influents, the DR values of R-MDC were about 1.5-8 times those of C-MDC. Ion-exchange resins packed in the desalination chamber worked as conductor and thus counteracted the increase in ohmic resistance during treatment of low concentration salt water. Ohmic resistances of R-MDC stabilized at 3.0-4.7 Ω. By contrast, the ohmic resistances of C-MDC ranged from 5.5 to 12.7 Ω, which were 55-272% higher than those of R-MDC. Remarkable improvement in desalination rate helped improve charge efficiency for desalination in R-MDC. The results first showed the potential of R-MDC in the desalination of water with low salinity. Copyright © 2012 Elsevier Ltd. All rights reserved.

Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

International Nuclear Information System (INIS)

Gu, Wen; Wu, Xingyang; Song, Peng; Zhang, Jianhua

2015-01-01

Highlights: • The electrical properties of GZO/CuS x contacts to p-GaN annealed at different temperatures in air have been studied. • Ohmic contacts were formed by annealing the contacts at 500 and 600 °C in air. • The oxygen in air was found to be essential for the formation of ohmic contact. • The possible formation mechanism of the ohmic contacts was illustrated. - Abstract: Ga-doped ZnO (GZO) contacts to p-GaN were investigated by using Cu x S interlayers under different annealing temperatures. It is shown that the GZO/Cu x S contacts annealed at 300 and 400 °C for 3 min in air exhibited non-ohmic characteristics. However, annealing the contacts at 500 and 600 °C in air resulted in linear current–voltage characteristics. The lowest specific contact resistivity of 1.66 × 10 −2 Ω cm 2 was obtained for the contact annealed at 500 °C. To account for the formation mechanism of the ohmic contact, AES and XPS were used to analyze the interfacial properties of the GZO/Cu x S/p-GaN and Cu x S/p-GaN interfaces, respectively. The possible reasons were discussed in detail, suggesting that the interfacial reactions and atomic diffusions are thought to be responsible for forming such a low contact resistance

Effects of an Anomalous Resistivity on the Power Deposition by Alfven Waves in Pre-Heated Spherical Tokamaks

Energy Technology Data Exchange (ETDEWEB)

Bruma, C.; Cuperman, S.; Komoshvili, K. [Tel Aviv Univ., Ramat Aviv (Israel)

2005-08-01

As it is the case with tokamaks in general, and moreover, due to their specific geometry (limited space for inboard solenoid magnets), low aspect ratio (spherical) tokamaks (STs) require additional auxiliary non-ohmic current startup and maintenance, generation of internal transport barriers (associated with underlying sheared poloidal flows and quasi-stationary radial electric fields), plasma heating, etc. One of the options to generate these necessary effects in STs is by the aid of rf waves launched from a suitable external antenna; in this option the effects just mentioned are a consequence of ponderomotive forces resulting from the interaction of the rf waves with the plasma. Since experimental data on STs (viz., the START-device) reveal the presence of an anomalous plasma resistivity (about four times Spitzer's one), we carried out a systematic parametric investigation of the effects of an increased plasma resistivity on the magnitude and spatial localization of the resulting power deposition.

Coexistence and competition of surface diffusion and geometric shielding in the growth of 1D bismuth nanostructures and their ohmic contact

International Nuclear Information System (INIS)

Tian, Ye; Jiang, Lianjun; Zhang, Xuejun; Deng, Yangbao; Deng, Shuguang

2014-01-01

We study the physical-vapor-deposition of 1D bismuth nanostructures. Bi nanowire elongating along [012] and/or [110] direction as well as anisotropic Bi nano-columns are physical-vapor-deposited successfully. The coexistence and competition of surface diffusion and geometric shielding are critical to their formation as well as growth mode transition among them. Since physical-vapor-deposition is a vacuum process, we make use of it to fabricate the ohmic contact to prevent the damage to the bismuth nanostructures brought by the etching to their thick surface oxide layer. (paper)

Role of Ag-alloy in the thermal stability of Ag-based ohmic contact to GaN(0 0 0 1) surface

International Nuclear Information System (INIS)

Xiong, Zhihua; Qin, Zhenzhen; Zhao, Qian; Chen, Lanli

2015-01-01

First-principles calculations are performed to study Ag and Ag-alloy adsorption stability on GaN(0 0 0 1) surface. We find Ag only contact to GaN surface is unstable under high temperature. While Ag-alloy adsorption exhibits better adsorption stability and electronic properties than that of the Ag only contact,due to the enhanced interaction between Ag-alloy and GaN(0 0 0 1) surface. The Ag-alloy, particularly AgNi, is proposed to be used as very promising ohmic contact to GaN for practical applications

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

Directory of Open Access Journals (Sweden)

Tejinder Singh

2014-01-01

Full Text Available This paper presents a novel design of single-pole four-throw (SP4T RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

Density limit in FTU tokamak during Ohmic operation

International Nuclear Information System (INIS)

Frigione, D.; Pieroni, L.

1993-01-01

The understanding of the physical mechanisms that regulate the density limit in a Tokamak is very important in view of a future fusion reactor. On one hand density enters as a factor in the figure of merit needed to achieve a burning plasma, and on the other hand a high edge density is a prerequisite for avoiding excessive erosion of the first walls and to limit the impurity influx into the hot plasma core. Furthermore a reactor should work in a safe zone of the operation parameters in order to avoid disruptive instabilities. The density limit problem has been tackled since the 70's, but so far a unique physics picture has not still emerged. In the last few years, due to the availability of better diagnostics, especially for the plasma edge, the use of pellet injectors to fuel the plasma and the experience gained on many different Tokamak, a consensus has been reached on the edge density as the real parameter responsible for the density limit. There are still two main mechanisms invoked to explain this limit: one refers to the power balance between the heat conducted and/or convected across the plasma radius and the power lost by impurity line radiation at the edge. When the latter overcomes the former, shrinking of the current channel occurs, which leads to instabilities due to tearing modes (usually the m/n=2/1) and then to disruption. The other explanation, for now valid for divertor machines, is based on the particle and energy balance in the scrape off layer (SOL). The limit in the edge density is then associated with the thermal collapse of the divertor plasma. In this work we describe the experiments on the density limit in FTU with Ohmic heating, the reason why we also believe that the limit is on the edge density, and discuss its relation to a simple model based on the SOL power balance valid for a limiter Tokamak. (author) 7 refs., 4 figs

Fokker-Planck equation of the reduced Wigner function associated to an Ohmic quantum Langevin dynamics

Science.gov (United States)

Colmenares, Pedro J.

2018-05-01

This article has to do with the derivation and solution of the Fokker-Planck equation associated to the momentum-integrated Wigner function of a particle subjected to a harmonic external field in contact with an ohmic thermal bath of quantum harmonic oscillators. The strategy employed is a simplified version of the phenomenological approach of Schramm, Jung, and Grabert of interpreting the operators as c numbers to derive the quantum master equation arising from a twofold transformation of the Wigner function of the entire phase space. The statistical properties of the random noise comes from the integral functional theory of Grabert, Schramm, and Ingold. By means of a single Wigner transformation, a simpler equation than that mentioned before is found. The Wigner function reproduces the known results of the classical limit. This allowed us to rewrite the underdamped classical Langevin equation as a first-order stochastic differential equation with time-dependent drift and diffusion terms.

Confinement of ohmically heated plasmas and turbulent heating in high-magnetic field tokamak TRIAM-1

Energy Technology Data Exchange (ETDEWEB)

Hiraki, N; Itoh, S; Kawai, Y; Toi, K; Nakamura, K [Kyushu Univ., Fukuoka (Japan). Research Inst. for Applied Mechanics

1979-12-01

TRIAM-1, the tokamak device with high toroidal magnetic field, has been constructed to establish the scaling laws of advanced tokamak devices such as Alcator, and to study the possibility of the turbulent heating as a further economical heating method of the fusion oriented plasmas. The plasma parameters obtained by ohmic heating alone are as follows; central electron temperature T sub(e0) = 640 eV, central ion temperature T sub(i0) = 280 eV and line-average electron density n average sub(e) = 2.2 x 10/sup 14/ cm/sup -3/. The empirical scaling laws are investigated concerning T sub(e0), T sub(i0) and n average sub(e). The turbulent heating has been carried out by applying the high electric field in the toroidal direction to the typical tokamak discharge with T sub(i0) asymptotically equals 200 eV. The efficient ion heating is observed and T sub(i0) attains to about 600 eV.

In-situ electric resistance measurements and annealing effects of graphite exposed to swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

Fernandes, Sandrina [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States); Pellemoine, Frederique, E-mail: pellemoi@frib.msu.edu [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States); Tomut, Marilena [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); National Institute for Materials Physics (NIMP), Bucharest (Romania); Avilov, Mikhail [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States); Bender, Markus [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); Boulesteix, Marine [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States); Krause, Markus [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); Technische Universität, Darmstadt (Germany); Mittig, Wolfgang [National Superconducting Cyclotron Lab (NSCL), Michigan State University, East Lansing, MI (United States); Schein, Mike [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States); Severin, Daniel [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); Trautmann, Christina [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); Technische Universität, Darmstadt (Germany)

2013-11-01

To study the suitability of using graphite as material for high-power targets for rare isotope production at the future Facility for Rare Isotope Beams (FRIB) in the USA and at the Facility for Antiproton and Ion Research (FAIR) in Germany, thin foils of polycrystalline graphite were exposed to 8.6-MeV/u Au ions reaching a maximum fluence of 1 × 10{sup 15} ions/cm{sup 2}. Foil irradiation temperatures of up to 1800 °C were obtained by ohmic heating. In-situ monitoring of the electrical resistance of the graphite foils during and after irradiation provided information on beam-induced radiation damage. The rate of electrical resistance increase as a function of fluence was found to decrease with increasing irradiation temperature, indicating a more efficient annealing of the irradiation-produced defects. This is corroborated by the observation that graphite foils irradiated at temperatures below about 800 °C showed cracks and pronounced deformations, which did not appear on the samples irradiated at higher temperatures.

Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

International Nuclear Information System (INIS)

Sinha, Nidhi; Ray, Geeta; Godara, Sanjay; Gupta, Manoj K.; Kumar, Binay

2014-01-01

Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm 2 ) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications

Limits on the field of ohmic heating solenoids, applied to a tokamak TNS

International Nuclear Information System (INIS)

Turner, L.R.

1978-01-01

If the ohmic heating solenoid for the TNS or other large tokamak is an ungraded cryostable superconducting solenoid, with NbTi at 4.2 K as the superconductor, then the smallest outer diameter is not achieved at the highest attainable field. There is a lower optimum field which minimizes the outer diameter for a given volt-second requirement. At higher fields the mean diameter decreases; but the high fields require more superconductor, more copper stabilizer, more stainless steel for support, and more liquid helium coolant. For the GA-ANL design for TNS, the optimum field is 7.55 T and the minimum outside diameter for the solenoid is 2.15 m. If, on the other hand, the solenoid is graded, with more NbTi, copper, and stainless steel on the inner turns where the field is higher, then the volt-seconds can always be increased, for a given outer diameter, by adding more turns at a higher field inside until either the critical field is reached or the solenoid bore is filled. However, the material and money required to add a few more volt-seconds increases rapidly with field

Limits on the field of ohmic heating solenoids, applied to a tokamak TNS

International Nuclear Information System (INIS)

Turner, L.R.

1977-01-01

If the ohmic heating solenoid for the TNS or other large tokamak is an ungraded cryostable superconducting solenoid, with NbTi at 4.2 K as the superconductor, then the smallest outer diameter is not achieved at the highest attainable field. There is a lower optimum field which minimizes the outer diameter for a given volt-second requirement. At higher fields the mean diameter decreases; but the high fields require more superconductor, more copper stabilizer, more stainless steel for support, and more liquid helium coolant. For the GA-ANL design for TNS, the optimum field is 7.55 T and the minimum outside diameter for the solenoid is 2.15 m. If, on the other hand, the solenoid is graded, with more NbTi, copper, and stainless steel on the inner turns where the field is higher, than the volt-seconds can always be increased, for a given outer diameter, by adding more turns at a higher field inside until either the critical field is reached or the solenoid bore is filled. However, the material and money required to add a few more volt-seconds increases rapidly with field

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

/p+-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm's law, trap-filled-limited and Child's law conduction procedure at room temperature.

Investigation of silicon sensors quality as a function of the ohmic side processing technology

CERN Document Server

Bloch, P; Golubkov, S A; Golutvin, I A; Egorov, N; Konjkov, K; Kozlov, Y; Peisert, Anna; Sidorov, A; Zamiatin, N I; Cheremuhin, A E

2002-01-01

Silicon sensors designed for the CMS Preshower detector must have a high breakdown voltage in order to be fully efficient after a strong irradiation. Studies made by several groups left bracket 1,2,3 right bracket have underlined the importance of the p**+ side geometrical parameters, such as the metal width and the number and spacing of guard rings. We have in addition investigated the effects related to the ohmic side processing and found that the breakdown voltage depends strongly on the depth of the effective "dead" n**+ layer. By increasing this thickness from mum to 2.5mum, the fraction of sensors with breakdown voltage higher than 500V increased from 22% to more than 80%. On the other hand, it was noticed that the starting surface quality of the wafer (double side polished or single side polished) does not affect the detectors parameters for a given production technology. The thick n**+-layer protects against initial wafer surface and defects caused by the technological treatment during the detector pr...

Effect of frequency and waveform on inactivation of Escherichia coli O157:H7 and Salmonella enterica Serovar Typhimurium in salsa by ohmic heating.

Science.gov (United States)

Lee, Su-Yeon; Ryu, Sangryeol; Kang, Dong-Hyun

2013-01-01

The effect of frequency of alternating current during ohmic heating on electrode corrosion, heating rate, inactivation of food-borne pathogens, and quality of salsa was investigated. The impact of waveform on heating rate was also investigated. Salsa was treated with various frequencies (60 Hz to 20 kHz) and waveforms (sine, square, and sawtooth) at a constant electric field strength of 12.5 V/cm. Electrode corrosion did not occur when the frequency exceeded 1 kHz. The heating rate of the sample was dependent on frequency up to 500 Hz, but there was no significant difference (P > 0.05) in the heating rate when the frequency was increased above 1 kHz. The electrical conductivity of the sample increased with a rise in the frequency. At a frequency of 60 Hz, the square wave produced a lower heating rate than that of sine and sawtooth waves. The heating rate between waveforms was not significantly (P > 0.05) different when the frequency was >500 Hz. As the frequency increased, the treatment time required to reduce Escherichia coli O157:H7 and Salmonella enterica serovar Typhimurium to below the detection limit (1 log CFU/g) decreased without affecting product quality. These results suggest that ohmic heating can be effectively used to pasteurize salsa and that the effect of inactivation is dependent on frequency and electrical conductivity rather than waveform.

Electrochemical evaluation of La{sub 0.6}Sr{sub 0.4}CoO{sub 3}-La{sub 0.45}Ce{sub 0.55}O{sub 2} composite cathodes for anode-supported La{sub 0.45}Ce{sub 0.55}O{sub 2}-La{sub 0.9}Sr{sub 0.1}Ga{sub 0.8}Mg{sub 0.2}O{sub 2.85} bilayer electrolyte solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Bi, Zhonghe; Cheng, Mojie; Dong, Yonglai; Wu, Hejin; She, Yunchuan; Yi, Baolian [Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)

2005-02-28

The electrochemical properties of porous composite cathodes of La{sub 0.6}Sr{sub 0.4}CoO{sub 3} (LSC) and La{sub 0.45}Ce{sub 0.55}O{sub 2} (LDC) in anode supported lanthanum-doped ceria (LDC)/lanthanum gallate (LSGM) bilayer electrolyte single cells have been investigated. The composite cathodes with different LDC and LSC contents were in contact with the LSGM layer in the single cells. Comparing with the pure LSC cathode, the interfacial resistance decreased upon the addition of LDC and the optimum content of LDC was 50 wt.%. The variation in ohmic resistance suggests that the composite cathode can suppress Co diffusion from the cathode into the LSGM electrolyte during the firing of the composite cathode onto the electrolyte. The composite cathode with 50 wt.% LDC showed an ohmic resistance near to the calculated resistance of an electrolyte film. For the pure LSC cathode, the optimum firing temperature was about 1150 {sup o}C, at which both the electrolyte resistance and interface resistance were the smallest. The cathodic interfacial resistance was effectively reduced for the composite cathodes, especially for the cathode with 50 wt.% LDC, which might be due to the suppressing of sintering and the growth of LSC particles from LDC particles during the firing onto the electrolyte. The complicated effects of the composite cathode on the interfacial resistance and ohmic resistance resulted in the best single cell performance at 650 {sup o}C with a 50 wt.% LDC composite cathode, and the best cell performance above 700 {sup o}C on the single cell with pure LSC cathode.

Nonlinear error-field penetration in low density ohmically heated tokamak plasmas

International Nuclear Information System (INIS)

Fitzpatrick, R

2012-01-01

A theory is developed to predict the error-field penetration threshold in low density, ohmically heated, tokamak plasmas. The novel feature of the theory is that the response of the plasma in the vicinity of the resonant surface to the applied error-field is calculated from nonlinear drift-MHD (magnetohydrodynamical) magnetic island theory, rather than linear layer theory. Error-field penetration, and subsequent locked mode formation, is triggered once the destabilizing effect of the resonant harmonic of the error-field overcomes the stabilizing effect of the ion polarization current (caused by the propagation of the error-field-induced island chain in the local ion fluid frame). The predicted scaling of the error-field penetration threshold with engineering parameters is (b r /B T ) crit ∼n e B T -1.8 R 0 -0.25 , where b r is the resonant harmonic of the vacuum radial error-field at the resonant surface, B T the toroidal magnetic field-strength, n e the electron number density at the resonant surface and R 0 the major radius of the plasma. This scaling—in particular, the linear dependence of the threshold with density—is consistent with experimental observations. When the scaling is used to extrapolate from JET to ITER, the predicted ITER error-field penetration threshold is (b r /B T ) crit ∼ 5 × 10 −5 , which just lies within the expected capabilities of the ITER error-field correction system. (paper)

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

Science.gov (United States)

Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

2018-05-01

In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

Modeling charge polarization voltage for large lithium-ion batteries in electric vehicles

Directory of Open Access Journals (Sweden)

Yan Jiang

2013-06-01

Full Text Available Purpose: Polarization voltage of the lithium-ion battery is an important parameter that has direct influence on battery performance. The paper aims to analyze the impedance characteristics of the lithium-ion battery based on EIS data. Design/methodology/approach: The effects of currents, initial SOC of the battery on charge polarization voltage are investigated, which is approximately linear function of charge current. The change of charge polarization voltage is also analyzed with the gradient analytical method in the SOC domain. The charge polarization model with two RC networks is presented, and parts of model parameters like Ohmic resistance and charge transfer impedance are estimated by both EIS method and battery constant current testing method. Findings: This paper reveals that the Ohmic resistance accounts for much contribution to battery total polarization compared to charge transfer impedance. Practical implications: Experimental results demonstrate the efficacy of the model with the proposed identification method, which provides the foundation for battery charging optimization. Originality/value: The paper analyzed the impedance characteristics of the lithium-ion battery based on EIS data, presented a charge polarization model with two RC networks, and estimated parameters like Ohmic resistance and charge transfer impedance.

Quench of non-Markovian coherence in the deep sub-Ohmic spin–boson model: A unitary equilibration scheme

International Nuclear Information System (INIS)

Yao, Yao

2015-01-01

The deep sub-Ohmic spin–boson model shows a longstanding non-Markovian coherence at low temperature. Motivating to quench this robust coherence, the thermal effect is unitarily incorporated into the time evolution of the model, which is calculated by the adaptive time-dependent density matrix renormalization group algorithm combined with the orthogonal polynomials theory. Via introducing a unitary heating operator to the bosonic bath, the bath is heated up so that a majority portion of the bosonic excited states is occupied. It is found in this situation the coherence of the spin is quickly quenched even in the coherent regime, in which the non-Markovian feature dominates. With this finding we come up with a novel way to implement the unitary equilibration, the essential term of the eigenstate-thermalization hypothesis, through a short-time evolution of the model

A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

Science.gov (United States)

Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong; Kim, Kyung Min; Song, Seul Ji; Lee, Min Hwan; Hwang, Cheol Seong

2010-05-14

This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.

Science.gov (United States)

Wang, Lai-Guo; Cao, Zheng-Yi; Qian, Xu; Zhu, Lin; Cui, Da-Peng; Li, Ai-Dong; Wu, Di

2017-02-22

Al 2 O 3 - or HfO 2 -based nanocomposite structures with embedded CoPt x nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPt x NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPt x NCs, ALD-derived Pt/oxide/100 cycle-CoPt x NCs/TiN/SiO 2 /Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥10 2 ) of OFF/ON states, better switching endurance up to 10 4 cycles, and longer data retention over 10 5 s. The possible resistive switching mechanism based on nanocomposite structures of oxide/CoPt x NCs has been proposed. The dominant conduction mechanisms in low- and high-resistance states of oxide-based device units with embedded CoPt x NCs are Ohmic behavior and space-charge-limited current, respectively. The insertion of CoPt x NCs can effectively improve the formation of conducting filaments due to the CoPt x NC-enhanced electric field intensity. Besides excellent resistive switching performances, the nanocomposite structures also simultaneously present ferromagnetic property. This work provides a flexible pathway by combining PEALD and TALD compatible with state-of-the-art Si-based technology for multifunctional electronic devices applications containing RRAM.

Power deposition to the pump limiters in Tore-Supra with ohmic plasmas

International Nuclear Information System (INIS)

Guilhem, D.; Chatelier, M.; Chappuis Fleury, I.; Klepper, C.

1990-01-01

The modification of power scrape-off-length, λq, and power deposition are studied both with the horizontal limiter alone and with the full set of 7 pump limiters for 1MW ohmic plasmas in TORE-SUPRA. By making spatially resolved infrared surface temperature measurements during the plasma discharge, the magnitude and distribution of the energy flux can be derived. For comparison, the surface temperature of the horizontal pump limiter is calculated with a finite element code using a 3D description of the field lines, an exponential scrape-off-layer, and the pump limiter geometry. From comparison of the infrared images of the limiter we derived that the λq for power deposition was slightly less than 9 mm (±1mm) which is in agreement with the predicted design value of 10 mm. For an 8 seconds discharge, the maximum surface temperature on the horizontal limiter is 450 0 C. Inserting the 7 limiters does not modify λq (which becomes 10 mm). The power is shared by all the limiters and the maximum surface temperature on the horizontal limiter decreased to 320 0 C. These λq values have been independently measured by the integrated energy deposition on the horizontal limiter and other internal structures 5 cm into the scrape-off layer. These values agree with the infrared measurements in the two cases

Uncovering nonperturbative dynamics of the biased sub-Ohmic spin-boson model with variational matrix product states

Science.gov (United States)

Gonzalez-Ballestero, C.; Schröder, Florian A. Y. N.; Chin, Alex W.

2017-09-01

We study the dynamics of the biased sub-Ohmic spin-boson model by means of a time-dependent variational matrix product state (TDVMPS) algorithm. The evolution of both the system and the environment is obtained in the weak- and the strong-coupling regimes, respectively characterized by damped spin oscillations and by a nonequilibrium process where the spin freezes near its initial state, which are explicitly shown to arise from a variety of reactive environmental quantum dynamics. We also explore the rich phenomenology of the intermediate-coupling case, a nonperturbative regime where the system shows a complex dynamical behavior, combining features of both the weakly and the strongly coupled case in a sequential, time-retarded fashion. Our work demonstrates the potential of TDVMPS methods for exploring otherwise elusive, nonperturbative regimes of complex open quantum systems, and points to the possibilities of exploiting the qualitative, real-time modification of quantum properties induced by nonequilibrium bath dynamics in ultrafast transient processes.

Initial reversed-field pinch experiments on ZT-40 and recent advances in RFP theory

International Nuclear Information System (INIS)

Baker, D.A.; Buchenauer, C.J.; Burkhardt, L.C.

1980-01-01

The ZT-40 reversed-field pinch (RFP) has been operated in several modes: (1) without reversed toroidal field, (2) with self reversal, and (3) with aided reversal. An analytic ohmic heating and ignition model both confirm and provide guidance for transport codes. Nondissipative formation schemes have been analyzed and ideal MHD stable evolution and burn scenarios have been found. Particle and fluid simulations have produced qualitative agreement with respect to the nonlinear behavior of m = 0 resistive g-modes. Helical ohmic reversed field states are produced by a 2-D dynamical simulation, and nonlinear analytic work describes the final state. A fast resistive MHD code for linear stability has clarified the relations between several kinds of resistive instabilities. Ballooning modes and g-modes in systems with arbitrary magnetic shear including resistivity and viscosity, have been studied in a unified treatment with growth rate vs wavenumber showing the existence of important cutoffs

Radiation, impurity effects, instability characteristics and transport in Ohmically heated plasmas in the PLT tokamak

International Nuclear Information System (INIS)

Bol, K.; Arunasalam, V.; Bitter, M.

1979-01-01

Titanium-gettered deuterium plasmas, with graphite or steel limiters to define the plasma minor radius, have Zsub(eff) approximately 1 for 3x10 13 14 cm -3 . In ungettered discharges the density limit set by disruptions is about half the value in gettered discharges. The bolometrically measured energy flux from the whole plasma volume is 80-100% of the Ohmic input power for ungettered discharges and 50-70% for gettered ones. The strucutre of MHD modes continues to be intensively studied by means of soft X-ray detector arrays; however, the connection with the disruptive instability remains unclear. Microinstabilities, studied by means of a 2-mm homodyne scattering system, appear to be of sufficient magnitude to influence energy and particle transport. Ion energy confinement times in the central region of the plasma have been estimated to be 50-100ms. Gross electron energy confinement time increases linearly with density at constant temperature. The longest electron energy confinement times observed are approximately >40ms in dense gettered discharges, giving total energy confinement times approximately 80ms. (author)

Optimization of ohmic heating parameters for polyphenoloxidase inactivation in not-from-concentrate elstar apple juice using RSM

DEFF Research Database (Denmark)

Abedelmaksoud, Tarek; Mohsen, Sobhy Mohamed; Duedahl-Olesen, Lene

2018-01-01

In this study, optimization of ohmic heating (OH) process parameters (temperature and voltage gradient) to inactivate polyphenoloxidase (PPO) of not-from-concentrate (NFC) apple juice was conducted. Response surface methodology was used for optimization of OH parameters, where the voltage gradient...... and temperature on the PPO activity in the NFC apple juice was evaluated. Then the optimized condition was used to produce the NFC apple juice and the quality parameters were evaluated and compared to NFC apple juice prepared by conventional heating (CH). The studied parameters were: PPO activity, total phenolic......, total carotenoids, ascorbic acid, cloud value, color as well as physical properties (i.e., TSS, acidity, electric conductivity and viscosity). The reduction of PPO activities was 97 and 91% for OH (at 40 V/cm and 80 °C) and CH (at 90 °C and 60 s), respectively. The reduction of the ascorbic acid...

Ohmic heating of the reversed-field pinch

International Nuclear Information System (INIS)

Gerwin, R.

1980-04-01

Simple analytic expressions are found for the global heating rate and the time needed to achieve global power balance with radiation and other losses, in useful agreement with large RFP transport codes. A simple condition is noted, which insures that the heating can be accomplished before appreciable resistive evolution occurs in the pinch profile. The product of poloidal beta, β/sub theta/, and toroidal current, I, that characterizes a condition of global power balance is derived subject to the above-mentioned condition without making key assumptions used by earlier investigators. First, a perfectly steady state (with local power balance) is not assumed, nor is it appropriate to do so. Secondly, the cross-field resistivity is not required to be classical. Since the value of (β/sub theta/ I) plays a fundamental role in determining the kind of device one requires, the foundations of this value are important

Effect of continuous ohmic heating to inactivate Escherichia coli O157:H7, Salmonella Typhimurium and Listeria monocytogenes in orange juice and tomato juice.

Science.gov (United States)

Lee, S-Y; Sagong, H-G; Ryu, S; Kang, D-H

2012-04-01

The purpose of this study was to investigate the efficacy of continuous ohmic heating for reducing Escherichia coli O157:H7, Salmonella Typhimurium and Listeria monocytogenes in orange juice and tomato juice. Orange juice and tomato juice were treated with electric field strengths in the range of 25-40 V cm(-1) for different treatment times. The temperature of the samples increased with increasing treatment time and electric field strength. The rate of temperature change for tomato juice was higher than for orange juice at all voltage gradients applied. Higher electric field strength or longer treatment time resulted in a greater reduction of pathogens. Escherichia coli O157:H7 was reduced by more than 5 log after 60-, 90- and 180-s treatments in orange juice with 40, 35 and 30 V cm(-1) electric field strength, respectively. In tomato juice, treatment with 25 V cm(-1) for 30 s was sufficient to achieve a 5-log reduction in E. coli O157:H7. Similar results were observed in Salm. Typhimurium and L. monocytogenes. The concentration of vitamin C in continuous ohmic heated juice was significantly higher than in conventionally heated juice (P pasteurize fruit and vegetable juices in a short operating time and that the effect of inactivation depends on applied electric field strengths, treatment time and electric conductivity. © 2012 The Authors. Journal of Applied Microbiology © 2012 The Society for Applied Microbiology.

Applications of electrical resistance tomography to subsurface environmental restoration

Energy Technology Data Exchange (ETDEWEB)

Ramirez, A.L. [Lawrence Livermore National Lab., CA (United States); Daily, W.D.

1994-11-15

We are developing a new imaging technique, Electrical Resistance Tomography (ERT), to map subsurface liquids as flow occurs during natural or clean-up processes and to map geologic structure. Natural processes (such as surface water infiltrating the vadose zone) and man-induced processes (such as tank leaks and clean-up processes such as steam injection), can create changes in a soil`s electrical properties that are readily measured. We have conducted laboratory and a variety of field experiments to investigate the capabilities and limitations of ERT for imaging underground structures and processes. In the last four years we have used ERT to successfully monitor several field processes including: a subsurface steam injection process (for VOC removal), an air injection process (below the water table) for VOC removal, water infiltration through the vadose zone, radio-frequency heating, ohmic heating, and tank and pond leaks. The information derived from ERT can be used by remediation projects to: detect and locate leaks, determine the effectiveness of clean-up processes, select appropriate clean-up alternatives, and to verify the installation and performance of subsurface barriers.

Physics of reversed-field pinch profile sustainment

International Nuclear Information System (INIS)

Moses, R.W.

1984-01-01

A description of the Reversed-Field Pinch (RFP) is given, emphasizing the necessity of a magnetohydrodynamic (MHD) or kinetic process to sustain field reversal. Three sustainment mechanisms are reviewed: the MHD dynamo, the tangled discharge model, and nonlocal resistivity. A slab model of steady (ohmic) states is described. A relationship between ohmic state wave numbers and the minimum amplitude of nonsymmetric field components is given. If ohmic states are the sole source of the sustainment process, their wave lengths are probably much longer than the minor diameter of the plasma. Otherwise field asymmetries would exceed those observed in experiments. It is noted that internal field data are still limited, restricting the generality of our comments

Direct patterning of highly-conductive graphene@copper composites using copper naphthenate as a resist for graphene device applications.

Science.gov (United States)

Bi, Kaixi; Xiang, Quan; Chen, Yiqin; Shi, Huimin; Li, Zhiqin; Lin, Jun; Zhang, Yongzhe; Wan, Qiang; Zhang, Guanhua; Qin, Shiqiao; Zhang, Xueao; Duan, Huigao

2017-11-09

We report an electron-beam lithography process to directly fabricate graphene@copper composite patterns without involving metal deposition, lift-off and etching processes using copper naphthenate as a high-resolution negative-tone resist. As a commonly used industrial painting product, copper naphthenate is extremely cheap with a long shelf time but demonstrates an unexpected patterning resolution better than 10 nm. With appropriate annealing under a hydrogen atmosphere, the produced graphene@copper composite patterns show high conductivity of ∼400 S cm -1 . X-ray diffraction, conformal Raman spectroscopy and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the final patterns. With the properties of high resolution and high conductivity, the patterned graphene@copper composites could be used as conductive pads and interconnects for graphene electronic devices with ohmic contacts. Compared to common fabrication processes involving metal evaporation and lift-off steps, this pattern-transfer-free fabrication process using copper naphthenate resist is direct and simple but allows comparable device performance in practical device applications.

Requirements for active resistive wall mode (RWM) feedback control

International Nuclear Information System (INIS)

In, Y; Kim, J S; Chu, M S; Jackson, G L; La Haye, R J; Strait, E J; Liu, Y Q; Marrelli, L; Okabayashi, M; Reimerdes, H

2010-01-01

The requirements for active resistive wall mode (RWM) feedback control have been systematically investigated and established using highly reproducible current-driven RWMs in ohmic discharges in DIII-D. The unambiguous evaluation of active RWM feedback control was not possible in previous RWM studies primarily due to the variability of the onset of the pressure-driven RWMs; the stability of the pressure-driven RWM is thought to be sensitive to various passive stabilization mechanisms. Both feedback control specifications and physics requirements for RWM stabilization have been clarified using the current-driven RWMs in ohmic discharges, when little or no passive stabilization effects are present. The use of derivative gain on top of proportional gain is found to be advantageous. An effective feedback control system should be equipped with a power supply with bandwidth greater than the RWM growth rate. It is beneficial to apply a feedback field that is toroidally phase-shifted from the measured RWM phase in the same direction as the plasma current. The efficacy of the RWM feedback control will ultimately be determined by the plasma fluctuations on internal diagnostics, as well as on external magnetics. The proximity of the feedback coils to the plasma appears to be an important factor in determining the effectiveness of the RWM feedback coils. It is desirable that an RWM feedback control system simultaneously handles error field correction at a low frequency, along with direct RWM feedback at a high frequency. There is an indication of the influence of a second least stable RWM, which had been theoretically predicted but never identified in experiments. A preliminary investigation based on active MHD spectroscopic measurement showed a strong plasma response around 400 Hz where the typical plasma response associated with the first least stable RWM was expected to be negligible. Present active feedback control requirements are based on a single mode assumption, so the

Development and application of nuclear radiation detector made from high resistivity silicon and compound semiconductor

International Nuclear Information System (INIS)

Ding Honglin; Zhang Xiufeng; Zhang Wanchang; Li Jiang

1995-11-01

The development of high resistivity silicon detectors and compound semiconductor detectors as well as their application in nuclear medicine are described. It emphasizes on several key techniques in fabricating detectors in order to meet their application in nuclear medicine. As for a high resistivity silicon detector, its counting rate to 125 I 28.5 keV X-ray has to be improved. So employing a conic mesa structure can increase the thickness of samples, and can raise the electric field of collecting charges under the same bias voltage. As for a GaAs detector, its performance of collecting charges has to be improved. So the thicknesses of GaAs samples are decreased and proper thermal treatment to make Ni-Ge-Au ohmic contacts are employed. Applying a suitable reverse bias voltage can obtain a fully depleted detector, and can obtain a lower forward turn-on voltage and a thinner weak electric field region. After resolving these key techniques, the performance of GaAs detectors has been distinctly improved. The count rate to 125 I X-ray has increased by three or five times under the same testing condition and background circumstance (2 refs., 8 figs., 3 tabs.)

Effects of electrode material and configuration on the characteristics of planar resistive switching devices

KAUST Repository

Peng, H.Y.

2013-11-13

We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories. 2013 Author(s).

High frequency ohmic loss of beryllium and its alloy with aluminium

International Nuclear Information System (INIS)

Prentslau, N.N.

1999-01-01

The surface resistance of Be of different purity and its alloy with Al (50%Be-50%Al) is investigated at temperatures ranged from 4,2 to 300 K in the 0-10 10 Hz frequency region. It is shown that within the temperature range (in the vicinity of 77 K) where beryllium is a de hyper conductor. Its surface resistance and the surface resistance of the alloy are minimum compared to that of other metals, in particular, of aluminium. The temperature dependence of the surface resistance of Be and its alloys is well described by the classical formulae of electrodynamics

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

International Nuclear Information System (INIS)

Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

2015-01-01

The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

Global gyrokinetic simulations of intrinsic rotation in ASDEX Upgrade Ohmic L-mode plasmas

Science.gov (United States)

Hornsby, W. A.; Angioni, C.; Lu, Z. X.; Fable, E.; Erofeev, I.; McDermott, R.; Medvedeva, A.; Lebschy, A.; Peeters, A. G.; The ASDEX Upgrade Team

2018-05-01

Non-linear, radially global, turbulence simulations of ASDEX Upgrade (AUG) plasmas are performed and the nonlinear generated intrinsic flow shows agreement with the intrinsic flow gradients measured in the core of Ohmic L-mode plasmas at nominal parameters. Simulations utilising the kinetic electron model show hollow intrinsic flow profiles as seen in a predominant number of experiments performed at similar plasma parameters. In addition, significantly larger flow gradients are seen than in a previous flux-tube analysis (Hornsby et al 2017 Nucl. Fusion 57 046008). Adiabatic electron model simulations can show a flow profile with opposing sign in the gradient with respect to a kinetic electron simulation, implying a reversal in the sign of the residual stress due to kinetic electrons. The shaping of the intrinsic flow is strongly determined by the density gradient profile. The sensitivity of the residual stress to variations in density profile curvature is calculated and seen to be significantly stronger than to neoclassical flows (Hornsby et al 2017 Nucl. Fusion 57 046008). This variation is strong enough on its own to explain the large variations in the intrinsic flow gradients seen in some AUG experiments. Analysis of the symmetry breaking properties of the turbulence shows that profile shearing is the dominant mechanism in producing a finite parallel wave-number, with turbulence gradient effects contributing a smaller portion of the parallel wave-vector.

Analytic study of transverse shunt resistance and even-odd mode coupling of a rod type RFQ

International Nuclear Information System (INIS)

Koscielniak, S.

1994-06-01

To minimize the ohmic power losses, it is necessary to maximize the transverse shunt resistance, R shunt . The cell of a rod-type RFQ is modelled by a parallel two-rod transmission line supported above a parallel ground conductor by two legs. Due to coupling between neighboring supports, the loading impedance is modified depending on the leg spacing. The shunt resistance is improved by reducing the cell length and increasing the leg spacing, and maximized when the legs are equally spaced. However, this is also the condition for strong excitation of the unwanted 'even-mode' in which a potential difference exists between the ends of the rods mid-plane and the grounding conductor or tank, Once the legs of the support are longitudinally separated, some even-mode excitation of the structure is inevitable because some current must be injected into the ground conductor; the even-mode excitation rises as leg separation increases. Further, when the desired odd-mode voltage is symmetric about the cell centre, the even-mode voltage is anti-symmetric This paper is a very much abridged version of two internal design notes[3], [4]. (author). 4 refs.,1 fig

Study of internal transport barriers in the initial phase of Ohmic discharges in TUMAN-3M

International Nuclear Information System (INIS)

Askinazi, L G; Bulanin, V V; Vildjunas, M I; Golant, V E; Gorokhov, M V; Kornev, V A; Krikunov, S V; Lebedev, S V; Petrov, A V; Rozhdestvensky, V V; Tukachinsky, A S; Zhubr, N A

2004-01-01

A regime with electron heat confinement improvement was recently found in the initial phase of discharges in the TUMAN-3M tokamak. An internal transport barrier (ITB) formation in this regime was confirmed by Thomson scattering measurements and by transport modelling. Two possible reasons for the ITB formation are discussed in the paper: by reduction of turbulent transport in the presence of low magnetic shear or by plasma sheared rotation. It is demonstrated that low magnetic shear formation is possible in the current ramp-up phase of the Ohmic discharge. The low magnetic shear does not seem to be the only reason for the transport reduction. Results of Doppler reflectometry measurements of poloidal rotation of density fluctuations are presented. It is found that core confinement improvement correlates with the appearance of sheared rotation of the density fluctuations and with a burst of the MHD activity. The ITB formation in the regime seems to be a result of a combined action of reduced magnetic shear and plasma sheared rotation

Plasma interaction with tungsten samples in the COMPASS tokamak in ohmic ELMy H-modes

International Nuclear Information System (INIS)

Dimitrova, M; Weinzettl, V; Matejicek, J; Dejarnac, R; Stöckel, J; Havlicek, J; Panek, R; Popov, Tsv; Marinov, S; Costea, S

2016-01-01

This paper reports experimental results on plasma interaction with tungsten samples with or without pre-grown He fuzz. Under the experimental conditions, arcing was observed on the fuzzy tungsten samples, resulting in localized melting of the fuzz structure that did not extend into the bulk. The parallel power flux densities were obtained from the data measured by Langmuir probes embedded in the divertor tiles on the COMPASS tokamak. Measurements of the current-voltage probe characteristics were performed during ohmic ELMy H-modes reached in deuterium plasmas at a toroidal magnetic field B T = 1.15 T, plasma current I p = 300 kA and line-averaged electron density n e = 5×10 19 m -3 . The data obtained between the ELMs were processed by the recently published first-derivative probe technique for precise determination of the plasma potential and the electron energy distribution function (EEDF). The spatial profile of the EEDF shows that at the high-field side it is Maxwellian with a temperature of 5 -- 10 eV. The electron temperatures and the ion-saturation current density obtained were used to evaluate the radial distribution of the parallel power flux density as being in the order of 0.05 -- 7 MW/m 2 . (paper)

A solvable self-similar model of the sausage instability in a resistive Z pinch

International Nuclear Information System (INIS)

Lampe, M.

1991-01-01

A solvable model is developed for the linearized sausage mode within the context of resistive magnetohydrodynamics. The model is based on the assumption that the fluid motion of the plasma is self-similar, as well as several assumptions pertinent to the limit of wavelength long compared to the pinch radius. The perturbations to the magnetic field are not assumed to be self-similar, but rather are calculated. Effects arising from time dependences of the z-independent perturbed state, e.g., current rising as t α , Ohmic heating, and time variation of the pinch radius, are included in the analysis. The formalism appears to provide a good representation of ''global'' modes that involve coherent sausage distortion of the entire cross section of the pinch, but excludes modes that are localized radially, and higher radial eigenmodes. For this and other reasons, it is expected that the model underestimates the maximum instability growth rates, but is reasonable for global sausage modes. The net effect of resistivity and time variation of the unperturbed state is to decrease the growth rate if α approx-lt 1, but never by more than a factor of about 2. The effect is to increase the growth rate if α approx-gt 1

Electric-pulse-induced resistance switching effect in the bulk of La0.5Ca0.5MnO3 ceramics

Directory of Open Access Journals (Sweden)

M. L. Wu

2014-04-01

Full Text Available In the majority of contributions, the electrical–pulse-induced resistance (EPIR switching effect of perovskite manganites is thought to originate from the extrinsic interfacial Schottky barrier between the metal electrode and the surface of sample. In this work, La0.5Ca0.5MnO3 (LCMO ceramic samples were synthesized by solid state reaction and the transport properties, especially, the EPIR effect and memristor behavior were investigated under 4-wire method using silver-glue as electrodes. Although the I-V characteristic of LCMO shows an ohmic linearity under the 4-wire mode at room temperature, a stable and remarkable EPIR can still be observed when the pulse voltage is more than a critical value. This bulk EPIR effect is novel for rare - earth doped manganites.

Non-ohmic phenomena in Mn-doped BaTiO3

International Nuclear Information System (INIS)

Prades, Marta; Beltran, Hector; Cordoncillo, Eloisa; Alonso, Pablo J.; Maso, Nahum; West, Anthony R.

2012-01-01

We report here a novel effect in which the resistance of a semiconducting oxide ceramic increases on application of a small dc bias. The ceramic conducts at high temperatures by an n-type hopping mechanism. On application of a dc bias, conduction electrons are trapped at surface states and the resistance increases. On removal of the dc bias, the trapped electrons are released and the sample regains its original state. This effect is the mirror image of that seen with similar ceramics that conduct by a p-type mechanism whose resistance decreases reversibly on application of a small dc bias. These two phenomena together offer the possibility of novel switching devices and memristive applications, especially if the switching times can be reduced. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

International Nuclear Information System (INIS)

Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

2014-01-01

The electrical behaviour of graphene (Gr) contacts to Al x Ga 1−x N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al 0.25 Ga 0.75 N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ B  ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ B  ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ B ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN

Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

Science.gov (United States)

Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

2017-08-01

Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

Long-term Steam Electrolysis with Electrolyte-Supported Solid Oxide Cells

International Nuclear Information System (INIS)

Schefold, Josef; Brisse, Annabelle; Poepke, Hendrik

2015-01-01

Steam electrolysis over 11000 h with an electrolyte-supported solid oxide cell is discussed. The cell of 45 cm"2 area consists of a scandia/ceria doped zirconia electrolyte (6Sc1CeSZ), CGO diffusion-barrier/adhesion layers, a lanthanum strontium cobaltite ferrite (LSCF) oxygen electrode, and a nickel steam/hydrogen electrode. After initial 2500 h operation with lower current-density magnitude, the current density was set to j = -0.9 A cm"−"2 and the steam conversion rate to 51%. This led to a cell voltage of 1.185 V at 847 °C cell temperature. Average voltage degradation was 7.3 mV/1000 h ( 100% throughout the test (with an external heat source for evaporation). Impedance spectroscopic measurements revealed a degradation almost entirely due to increasing ohmic resistance. The rate of resistance increase was initially faster (up to 40 mΩ cm"2/1000 h) and stabilised after several 1000 h operation. After 9000 h a small (non-ohmic) electrode degradation became detectable (<2 mV/1000 h), superimposed to ohmic degradation. The small electrode degradation is understood as indication for largely reversible (electrolysis cell/fuel cell) behaviour.

Double diffusive magnetohydrodynamic heat and mass transfer of nanofluids over a nonlinear stretching/shrinking sheet with viscous-Ohmic dissipation and thermal radiation

Directory of Open Access Journals (Sweden)

Dulal Pal

2017-03-01

Full Text Available The study of magnetohydrodynamic (MHD convective heat and mass transfer near a stagnation-point flow over stretching/shrinking sheet of nanofluids is presented in this paper by considering thermal radiation, Ohmic heating, viscous dissipation and heat source/sink parameter effects. Non-similarity method is adopted for the governing basic equations before they are solved numerically using Runge-Kutta-Fehlberg method using shooting technique. The numerical results are validated by comparing the present results with previously published results. The focus of this paper is to study the effects of some selected governing parameters such as Richardson number, radiation parameter, Schimdt number, Eckert number and magnetic parameter on velocity, temperature and concentration profiles as well as on skin-friction coefficient, local Nusselt number and Sherwood number.

Interplay of cross-plane polaronic transport and resistive switching in Pt–Pr0.67Ca0.33MnO3–Pt heterostructures

International Nuclear Information System (INIS)

Scherff, M; Hoffmann, J; Meyer, B; Danz, Th; Jooss, Ch

2013-01-01

The identification of the cross-plane electric transport mechanisms in different resistance states of metal–oxide sandwich structures is essential for gaining insights into the mechanisms of resistive switching (RS). Here, we present a systematic study of cross-plane electric transport properties of Pr 0.67 Ca 0.33 MnO 3 (PCMO) thin films sandwiched by precious Pt metal electrodes. We observe three different transport regimes: ohmic, nonlinear and RS. The nonlinear regime is associated with colossal magneto-resistance (CMR) and colossal electro-resistance (CER) effects. In contrast to RS, the CMR and CER are volatile resistance effects which persist only during application of strong magnetic or electric fields and they are restricted to low temperatures. At low current densities, the device resistance is dominated by small polaron hopping transport of the PCMO film. At higher electric current densities near the switching threshold, the interface resistance starts to dominate and remarkably also exhibits thermally activated transport properties. Our studies also shed light onto the interplay of colossal resistance effects and RS: at low temperatures, RS can be only induced by reduction of the PCMO resistivity through CMR and CER. This clearly demonstrates the key role of the current density for controlling the amplitude of non-volatile resistive changes. Conversely, the CMR can be used as a probe for the switching induced changes in disorder and correlations. At small switching amplitudes, we observe slight changes in polaron activation energy which can be attributed to changes at the interface. If the switching amplitude exceeds 1000% and more, the CMR effect in the device can be reversibly changed. This indicates persistent changes in electronic or lattice structure of large regions within the PCMO film. (paper)

The effect of radiation intensity on diode characteristics of silicon solar cells

International Nuclear Information System (INIS)

Asgerov, Sh.Q; Agayev, M.N; Hasanov, M.H; Pashayev, I.G

2008-01-01

In order to explore electro-physical properties of silicon solar cells, diode characteristics and ohmic properties of Al - Ni / (n+) - Si contact has been studied. Diode characteristics have been studied on a wide temperature range and on various radiation intensity, so this gives us the ability to observe the effect of the radiation and the temperature on electro-physical properties of under study solar cells. Volt-Ampere characteristics of the ohmic contacts of the silicon solar cells have been presented. As well as contact resistance and mechanism of current transmission has been identified.

Specific features of the photoconductivity of semi-insulating cadmium telluride

Energy Technology Data Exchange (ETDEWEB)

Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P., E-mail: aplysenko@hse.ru; Strogankova, N. I.; Shadov, M. B. [National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics (Russian Federation); Belov, A. G. [OAO GIREDMET State Research and Design Institute of the Rare-Metal Industry (Russian Federation)

2014-12-15

The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

Desenvolvimento e uso do compósito de Nb2O5|Cu como revestimento aplicado por aspersão térmica sobre o aço AISI 1020 para proteção contra a corrosão pelo solo em estruturas enterradas

Directory of Open Access Journals (Sweden)

Oscar Regis Junior

2012-01-01

Full Text Available An Nb2O|Cu corrosion-resistant coating was developed and applied onto AISI 1020 steel substrate by Powder Flame Spray. A galvanostatic electrochemical technique was employed, with and without ohmic drop, in four different soils (two corrosively aggressive and two less aggressive. Behavior of coatings in different soils was compared using a cathodic hydrogen reduction reaction (equilibrium potential, overvoltage and exchange current density focusing on the effect of ohmic drop. Results allow recommendation of Nb2O5|Cu composite for use in buried structure protection.

Development of Nb{sub 2}O{sub 5}|Cu composite as AISI 1020 steel thermal spray coating for protection against corrosion by soil in buried structures; Desenvolvimento e uso do composito de Nb{sub 2}O{sub 5}|Cu como revestimento aplicado por aspersao termica sobre o aco AISI 1020 para protecao contra a corrosao pelo solo em estruturas enterradas

Energy Technology Data Exchange (ETDEWEB)

Regis Junior, Oscar [Universidade Tecnologica Federal do Parana, Ponta Grossa, PR (Brazil). Dept. de Mecanica; Silva, Jose Maurilio da; Portella, Kleber Franke [Instituto de Tecnologia para o Desenvolvimento, Curitiba, PR (Brazil). Dept. de Pesquisa em Engenharia Civil; Paredes, Ramon Sigifredo Cortes, E-mail: regis@utfpr.edu.br [Universidade Federal do Parana, Curitiba, PR (Brazil). Dept. de Mecanica

2012-07-01

An Nb{sub 2}O|Cu corrosion-resistant coating was developed and applied onto AISI 1020 steel substrate by Powder Flame Spray. A galvanostatic electrochemical technique was employed, with and without ohmic drop, in four different soils (two corrosively aggressive and two less aggressive). Behavior of coatings in different soils was compared using a cathodic hydrogen reduction reaction (equilibrium potential, overvoltage and exchange current density) focusing on the effect of ohmic drop. Results allow recommendation of Nb{sub 2}O{sub 5}|Cu composite for use in buried structure protection. (author)

Development of Nb2O5|Cu composite as AISI 1020 steel thermal spray coating for protection against corrosion by soil in buried structures

International Nuclear Information System (INIS)

Regis Junior, Oscar; Silva, Jose Maurilio da; Portella, Kleber Franke; Paredes, Ramon Sigifredo Cortes

2012-01-01

An Nb 2 O|Cu corrosion-resistant coating was developed and applied onto AISI 1020 steel substrate by Powder Flame Spray. A galvanostatic electrochemical technique was employed, with and without ohmic drop, in four different soils (two corrosively aggressive and two less aggressive). Behavior of coatings in different soils was compared using a cathodic hydrogen reduction reaction (equilibrium potential, overvoltage and exchange current density) focusing on the effect of ohmic drop. Results allow recommendation of Nb 2 O 5 |Cu composite for use in buried structure protection. (author)

Current transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and deposition

International Nuclear Information System (INIS)

Chen, X.D.; Ling, C.C.; Fung, S.; Beling, C.D.; Mei, Y.F.; Fu, Ricky K.Y.; Siu, G.G.; Chu, Paul K.

2006-01-01

Rectifying undoped and nitrogen-doped ZnO/p-Si heterojunctions were fabricated by plasma immersion ion implantation and deposition. The undoped and nitrogen-doped ZnO films were n type (n∼10 19 cm -3 ) and highly resistive (resistivity ∼10 5 Ω cm), respectively. While forward biasing the undoped-ZnO/p-Si, the current follows Ohmic behavior if the applied bias V forward is larger than ∼0.4 V. However, for the nitrogen-doped-ZnO/p-Si sample, the current is Ohmic for V forward 2 for V forward >2.5 V. The transport properties of the undoped-ZnO/p-Si and the N-doped-ZnO/p-Si diodes were explained in terms of the Anderson model and the space charge limited current model, respectively

On-Board State-of-Health Estimation at a Wide Ambient Temperature Range in Lithium-Ion Batteries

Directory of Open Access Journals (Sweden)

Tiansi Wang

2015-08-01

Full Text Available A state-of-health (SOH estimation method for electric vehicles (EVs is presented with three main advantages: (1 it provides joint estimation of cell’s aging states in terms of power and energy (i.e., SOHP and SOHE—because the determination of SOHP and SOHE can be reduced to the estimation of the ohmic resistance increase and capacity loss, respectively, the ohmic resistance at nominal temperature will be taken as a health indicator, and the capacity loss is estimated based on a mechanistic model that is developed to describe the correlation between resistance increase and capacity loss; (2 it has wide applicability to various ambient temperatures—to eliminate the effects of temperature on the resistance, another mechanistic model about the resistance against temperature is presented, which can normalize the resistance at various temperatures to its standard value at the nominal temperature; and (3 it needs low computational efforts for on-board application—based on a linear equation of cell’s dynamic behaviors, the recursive least-squares (RLS algorithm is used for the resistance estimation. Based on the designed performance and validation experiments, respectively, the coefficients of the models are determined and the accuracy of the proposed method is verified. The results at different aging states and temperatures show good accuracy and reliability.

Magnetically levitated railway with common reaction rail for a linear motor drive and an electro dynamic side guidance arrangement

Energy Technology Data Exchange (ETDEWEB)

Friedrich, R

1977-04-07

The invention concerns a magnetically levitated railway with common reaction rail for the linear motor drive and the electrical side guidance arrangement. While the electro-dynamic hovering process requires a high electrical conductivity of the reaction rails in order to reduce eddy current losses, these should show a relatively high resistance for the asynchronous linear motor to reduce losses of propelling force. These contradictory requirements can be fulfilled for a common reaction rail made of homogeneous material of high electrical conductivity according to the invention, by providing slits at right angles to the driving axis in the part of the reaction rail allocated to the linear motor. Thus the guidance system retains a low ohmic resistance, while the part of the reaction rail allocated to the windings of the linear motor has a relatively low ohmic secondary resistance, by which the border and end effects which reduce the propelling force can be appreciably reduced.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

Science.gov (United States)

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates

International Nuclear Information System (INIS)

Chen Xinman; Zhang Hu; Ruan Kaibin; Shi Wangzhou

2012-01-01

Highlights: ► Annealing effect on the bipolar resistive switching behaviors of BiFeO 3 thin films with Pt/BiFeO 3 /LNO was reported. ► Rectification property was explained from the asymmetrical contact between top and bottom interfaces and the distinct oxygen vacancy density. ► The modification of Schottky-like barrier was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices. - Abstract: We reported the annealing effect on the electrical behaviors of BiFeO 3 thin films integrated on LaNiO 3 (LNO) layers buffered Si substrates by sol–gel spin-coating technique. All the BiFeO 3 thin films exhibit the reversible bipolar resistive switching behaviors with Pt/BiFeO 3 /LNO configuration. The electrical conduction mechanism of the devices was dominated by the Ohmic conduction in the low resistance state and trap-controlled space charged limited current in the high resistance state. Good diode-like rectification property was observed in device with BiFeO 3 film annealed at 500 °C, but vanished in device with BiFeO 3 film annealed at 600 °C. This was attributed to the asymmetrical contact between top and bottom interfaces as well as the distinct oxygen vacancy density verified by XPS. Furthermore, the modification of Schottky-like barrier due to the drift of oxygen vacancies was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices.

Variational dynamics of the sub-Ohmic spin-boson model on the basis of multiple Davydov D{sub 1} states

Energy Technology Data Exchange (ETDEWEB)

Wang, Lu [Division of Materials Science, Nanyang Technological University, Singapore 639798 (Singapore); Department of Physics, Zhejiang University, Hangzhou 310027 (China); Chen, Lipeng; Zhao, Yang, E-mail: YZhao@ntu.edu.sg [Division of Materials Science, Nanyang Technological University, Singapore 639798 (Singapore); Zhou, Nengji [Department of Physics, Hangzhou Normal University, Hangzhou 310046 (China)

2016-01-14

Dynamics of the sub-Ohmic spin-boson model is investigated by employing a multitude of the Davydov D{sub 1} trial states, also known as the multi-D{sub 1} Ansatz. Accuracy in dynamics simulations is improved significantly over the single D{sub 1} Ansatz, especially in the weak system-bath coupling regime. The reliability of the multi-D{sub 1} Ansatz for various coupling strengths and initial conditions is also systematically examined, with results compared closely with those of the hierarchy equations of motion and the path integral Monte Carlo approaches. In addition, a coherent-incoherent phase crossover in the nonequilibrium dynamics is studied through the multi-D{sub 1} Ansatz. The phase diagram is obtained with a critical point s{sub c} = 0.4. For s{sub c} < s < 1, the coherent-to-incoherent crossover occurs at a certain coupling strength, while the coherent state recurs at a much larger coupling strength. For s < s{sub c}, only the coherent phase exists.

Engineering design solutions of flux swing with structural requirements for ohmic heating solenoids

International Nuclear Information System (INIS)

Smith, R.A.

1977-01-01

Here a more detailed publication is summarized which presents analytical methods with solutions that describe the structural behavior of ohmic heating solenoids to achieve a better understanding of the relationships between the functional variables that can provide the basis for recommended design improvements. The solutions relate the requirements imposed by structural integrity to the need for producing sufficient flux swing to initiate a plasma current in the tokamak fusion machine. A method is provided to perform a detailed structural analysis of every conducting turn in the radial build of the solenoid, and computer programmed listings for the closed form solutions are made available as part of the reference document. Distinction is made in deriving separate models for the regions of the solenoid where turn-to-turn radial contact is maintained with radial compression or with a bond in the presence of radial tension, and also where there is turn-to-turn radial separation due to the absence or the loss of bonding in the presence of would be radial tension. The derivations follow the theory of elasticity for a body possessing cylindrical anisotropy where the material properties are different in the radial and tangential directions. The formulations are made practical by presenting the methods for reducing stress and for relocating the relative position for potential turn-to-turn radial delamination by permitting an arbitrary traction at the outer radial surface of the solenoid in the form of pressure or displacement such as may be applied by a containment or a shrink fit structural cylinder

Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2- x thin films deposited at room temperature

Science.gov (United States)

Ismail, Muhammad; Ullah, Rehmat; Hussain, Riaz; Talib, Ijaz; Rana, Anwar Manzoor; Hussain, Muhammad; Mahmood, Khalid; Hussain, Fayyaz; Ahmed, Ejaz; Bao, Dinghua

2018-02-01

Cerium oxide (CeO2-x) film was deposited on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Resistive switching characteristics of these ceria films have been improved by increasing oxygen content during deposition process. Endurance and statistical analyses indicate that the operating stability of CeO2-x-based memory is highly dependent on the oxygen content. Results indicate that CeO2-x film-based RRAM devices exhibit optimum performance when fabricated at an argon/oxygen ratio of 6:24. An increase in the oxygen content introduced during CeO2-x film deposition not only stabilizes the conventional bipolar RS but also improves excellent switching uniformity such as large ON/OFF ratio (102), excellent switching device-to-device uniformity and good sweep endurance over 500 repeated RS cycles. Conduction in the low-resistance state (LRS) as well as in the low bias field region in the high-resistance state (HRS) is found to be Ohmic and thus supports the conductive filament (CF) theory. In the high voltage region of HRS, space charge limited conduction (SCLC) and Schottky emission are found to be the dominant conduction mechanisms. A feasible filamentary RS mechanism based on the movement of oxygen ions/vacancies under the bias voltage has been discussed.

Comparison of Power Supply Pumping of Switch-Mode Audio Power Amplifiers with Resistive Loads and Loudspeakers as Loads

DEFF Research Database (Denmark)

Knott, Arnold; Petersen, Lars Press

2013-01-01

Power supply pumping is generated by switch-mode audio power amplifiers in half-bridge configuration, when they are driving energy back into their source. This leads in most designs to a rising rail voltage and can be destructive for either the decoupling capacitors, the rectifier diodes...... in the power supply or the power stage of the amplifier. Therefore precautions are taken by the amplifier and power supply designer to avoid those effects. Existing power supply pumping models are based on an ohmic load attached to the amplifier. This paper shows the analytical derivation of the resulting...... waveforms and extends the model to loudspeaker loads. Measurements verify, that the amount of supply pumping is reduced by a factor of 4 when comparing the nominal resistive load to a loudspeaker. A simplified and more accurate model is proposed and the influence of supply pumping on the audio performance...

Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Energy Technology Data Exchange (ETDEWEB)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Hiraiwa, Atsushi [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Kawarada, Hiroshi [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

2015-03-23

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

Non-ohmic phenomena in Mn-doped BaTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Prades, Marta; Beltran, Hector; Cordoncillo, Eloisa [Departamento de Quimica Inorganica y Organica, Universitat Jaume I, Avda. Sos Baynat s/n, 12071 Castellon (Spain); Alonso, Pablo J. [Instituto de Ciencia de Materiales de Aragon, ICMA, Universidad de Zaragoza-C.S.I.C., C/Pedro Cerbuna 12, 50009 Zaragoza (Spain); Maso, Nahum; West, Anthony R. [Department of Materials Science and Engineering, University of Sheffield, Mappin Street, S1 3JD Sheffield (United Kingdom)

2012-11-15

We report here a novel effect in which the resistance of a semiconducting oxide ceramic increases on application of a small dc bias. The ceramic conducts at high temperatures by an n-type hopping mechanism. On application of a dc bias, conduction electrons are trapped at surface states and the resistance increases. On removal of the dc bias, the trapped electrons are released and the sample regains its original state. This effect is the mirror image of that seen with similar ceramics that conduct by a p-type mechanism whose resistance decreases reversibly on application of a small dc bias. These two phenomena together offer the possibility of novel switching devices and memristive applications, especially if the switching times can be reduced. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Energy Technology Data Exchange (ETDEWEB)

Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-11-15

The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

Effects of the phase periodicity on the quantum dynamics of a resistively shunted Josephson junction

International Nuclear Information System (INIS)

Zwerger, W.; Dorsey, A.T.; Fisher, M.P.A.

1986-01-01

A phenomenological model is introduced for the dissipative quantum dynamics of the phase phi across a current-biased Josephson junction. The model is invariant under phi→phi+2π. This enables us to restrict phi to the interval 0 to 2π, equating phi+2π with phi, and study the role played by the resulting nontrivial topology. Using Feynman's influence functional theory it is shown that the dissipation suppresses interference between paths with different winding numbers. For Ohmic dissipation this interference is completely destroyed, and phi can effectively be treated as an extended coordinate. This justifies the use of the usual washboard potential description of a current-biased junction even in the quantum case, provided an Ohmic dissipation mechanism is present

From coherent motion to localization: II. Dynamics of the spin-boson model with sub-Ohmic spectral density at zero temperature

International Nuclear Information System (INIS)

Wang Haobin; Thoss, Michael

2010-01-01

Graphical abstract: □□□ - Abstract: The dynamics of the spin-boson model at zero temperature is studied for a bath characterized by a sub-Ohmic spectral density. Using the numerically exact multilayer multiconfiguration time-dependent Hartree (ML-MCTDH) method, the population dynamics of the two-level subsystem has been investigated in a broad range of parameter space. The results show the transition of the dynamics from weakly damped coherent motion to localization upon increase of the system-bath coupling strength. Comparison of the exact ML-MCTDH simulations with the non-interacting blip approximation (NIBA) shows that the latter performs rather poorly in the weak coupling regime with small Kondo parameters. However, NIBA improves significantly upon increase in the coupling strength and is quantitatively correct in the strong coupling, nonadiabatic limit. The transition from coherent motion to localization as a function of the different parameters of the model is analyzed in some detail.

Analysis and testing of the DIII-D ohmic heating coil lead repair clamp

International Nuclear Information System (INIS)

Reis, E.E.; Anderson, P.M.; Chin, E.; Robinson, J.I.

1997-11-01

DIII-D has been operating for the last year with limited volt-second capabilities due to structural failure of a conductor lead to one of the ohmic heating (OH) solenoids. The conductor failure was due to poor epoxy impregnation of the overwrap of the lead pack, resulting in copper fatigue and a water leak. A number of structural analyses were performed to assist in determining the failure scenario and to evaluate various repair options. A fatigue stress analysis of the leads with a failed epoxy overwrap indicated crack initiation after 1,000 cycles at the maximum operating conditions. The failure occurred in a very inaccessible area which restricted design repair options to concepts which could be implemented remotely. Several design options were considered for repairing the lead so that it can sustain the loads for 7.5 Vs conditions at full toroidal field. A clamp, along with preloaded banding straps and shim bags, provides a system that guarantees that the stress at the crack location is always compressive and prevents further crack growth in the conductor. Due to the limited space available for the repair, it was necessary to design the clamp system to operate at the material yield stress. The primary components of the clamp system were verified by load tests prior to installation. The main body of the clamp contains a load cell and potentiometer for monitoring the load-deflection characteristics of the clamp and conductors during plasma operation. Strain gages provides redundant instrumentation. If required, the preload on the conductors can be increased remotely by a special wrench attached to the clamp assembly

Degradation study of AlAs/GaAs resonant tunneling diode IV curves under influence of high temperatures

Science.gov (United States)

Makeev, M. O.; Meshkov, S. A.; Sinyakin, V. Yu

2017-11-01

In the present work the thermal degradation of IV curves of AlAs/GaAs resonant tunneling diodes using artificial aging method was investigated. The dependency of AuGeNi specific ohmic contact resistance on time and temperature was determined.

Global properties of ohmically heated reversed-field pinches

International Nuclear Information System (INIS)

Gerwin, R.A.

The simultaneous requirements of power balance and pressure balance have been considered. The treatment generalizes the Pease-Braginskii pinch current limit by including toroidal magnetic field, anomalous resistivity, nonradiative losses, and time-dependent fields. The rise of the temperature to a state of power balance proves to be amenable to a very simple and unified description. Finally, the practical parameter windows implied by the joint action of power balance and pressure balance are displayed

Influence of porous silicon formation on the performance of multi ...

Indian Academy of Sciences (India)

2014-05-29

May 29, 2014 ... ∗Author for correspondence (pscientific1@aec.org.sy) proportion of 1:1. .... accounting for an additional ohmic series resistance in the vicinity of grain .... Calculated contributions of D1 and D2 to the measured characteristic at ...

Au/Zn Contacts to rho-InP: Electrical and Metallurgical Characteristics and the Relationship Between Them

Science.gov (United States)

Weizer, Victor G.; Fatemi, Navid S.; Korenyi-Both, Andras L.

1994-01-01

The metallurgical and electrical behavior of Au/Zn contacting metallization on p-type InP was investigated as a function of the Zn content in the metallization. It was found that ohmic behavior can be achieved with Zn concentrations as small as 0.05 atomic percent Zn. For Zn concentrations between 0.1 and 36 at. percent, the contact resistivity rho(sub c) was found to be independent of the Zn content. For low Zn concentrations the realization of ohmic behavior was found to require the growth of the compound Au2P3 at the metal-InP interface. The magnitude of rho(sub c) is shown to be very sensitive to the growth rate of the interfacial Au2P3 layer. The possibility of exploiting this sensitivity to provide low resistance contacts while avoiding the semiconductor structural damage that is normally attendant to contact formation is discussed.

Radiation-resistant photostructure for Schottky diode based on Cr/In2Hg3Te6

Directory of Open Access Journals (Sweden)

Ashcheulov A. A.

2016-05-01

Full Text Available Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors' application on In2Hg3Te6 crystal base characterized by a photosensitivity in the spectral range of 0,5-1,6 mm and also by increased radiation resistance to alpha, beta and gamma radiation is most acceptable. Schottky photodiode structure was designed on the base of this semiconductor formed by a modified floating zone recrystallization technique where the sedimentation effect was leveled. It consists of n-In2Hg3Te6 substrate and deposited by cathode sputtering Cr barrier layer of thickness within a range 10-11 nm choice of Cr is determined by its optimal optical, electric and adhesive features in high quality radiation-resistant photodiode structures manufacturing. Indium and nichrome are used as ohmic contacts. The barrier structures have the contact area of 1,13 mm2 with photo response of 0,6-1,6 mm at the maximal sensitivity 0,43 A/W on the wavelength l,55 mm. Reverse dark current of these structures do not exceed 4 mA at the bias of 1 V (T=295 K, and the potential barrier height is equal to 0,41 eV. The tests of radiation resistance of these structures demonstrated their ability to function at doses of 2⋅108 rem without evident parameters changes. This allows using them in practical aims in the conditions of high radiation.

Performance of a vanadium redox flow battery with tubular cell design

Science.gov (United States)

Ressel, Simon; Laube, Armin; Fischer, Simon; Chica, Antonio; Flower, Thomas; Struckmann, Thorsten

2017-07-01

We present a vanadium redox flow battery with a tubular cell design which shall lead to a reduction of cell manufacturing costs and the realization of cell stacks with reduced shunt current losses. Charge/discharge cycling and polarization curve measurements are performed to characterize the single test cell performance. A maximum current density of 70 mAcm-2 and power density of 142 Wl-1 (per cell volume) is achieved and Ohmic overpotential is identified as the dominant portion of the total cell overpotential. Cycling displays Coulomb efficiencies of ≈95% and energy efficiencies of ≈55%. During 113 h of operation a stable Ohmic cell resistance is observed.

Ohmic Contacts for Technology for Frequency Agile Digitally Synthesized Transmitters

National Research Council Canada - National Science Library

Mohney, Suzanne E

2007-01-01

... bipolar transistors to smaller sizes. For p-type InAs, the combination of modest contact resistance and good thermal stability at 250 0 C was achieved with metallizations that had thin Pd layers deposited first, fol lowed by W or Ti/Pt...

Detection of inhomogeneities in membrane ohmic resistance in geometrically complex systems

DEFF Research Database (Denmark)

Svirskis, G; Hounsgaard, J; Gutman, A

2000-01-01

DC field-evoked transients in arbitrarily shaped neurons and syncytia were analyzed theoretically. In systems with homogeneous passive membrane properties, the transients develop much faster than the membrane discharges. Conductance of the proximal membrane could be larger due to the injury impos...

Plasma rotation and radial electric field with a density ramp in an ohmically heated tokamak

International Nuclear Information System (INIS)

Duval, B.P.; Joye, B.; Marchal, B.

1991-10-01

Measurements of toroidal and poloidal rotation of the TCA plasma with Alfven Wave Heating and different levels of gas feed are reported. The temporal evolution of the rotation was inferred from intrinsic spectral lines of CV, CIII and, using injected helium gas, from HeII. The light collection optics and line intensity permitted the evolution of the plasma rotation to be measured with a time resolution of 2ms. The rotation velocities were used to deduce the radial electric field. With Alfven heating there was no observable change of this electric field that could have been responsible for the density rise which is characteristic of the RF experiments on TCA. The behaviour of the plasma rotation with different plasma density ramp rates was investigated. The toroidal rotation was observed to decrease with increasing plasma density. The poloidal rotation was observed to follow the value of the plasma density. With hard gas puffing, changes in the deduced radial electric field were found to coincide with changes in the peaking of the plasma density profile. Finally, with frozen pellet injection, the expected increase in the radial electric field due to the increased plasma density was not observed, which may explain the poorer confinement of the injected particles. Even in an ohmically heated tokamak, the measurement of the plasma rotation and the radial electric field are shown to be strongly related to the confinement. A thorough statistical analysis of the systematic errors is presented and a new and significant source of uncertainty in the experimental technique is identified. (author) 18 figs., 18 refs

Measurements of time average series resonance effect in capacitively coupled radio frequency discharge plasma

International Nuclear Information System (INIS)

Bora, B.; Bhuyan, H.; Favre, M.; Wyndham, E.; Chuaqui, H.; Kakati, M.

2011-01-01

Self-excited plasma series resonance is observed in low pressure capacitvely coupled radio frequency discharges as high-frequency oscillations superimposed on the normal radio frequency current. This high-frequency contribution to the radio frequency current is generated by a series resonance between the capacitive sheath and the inductive and resistive bulk plasma. In this report, we present an experimental method to measure the plasma series resonance in a capacitively coupled radio frequency argon plasma by modifying the homogeneous discharge model. The homogeneous discharge model is modified by introducing a correction factor to the plasma resistance. Plasma parameters are also calculated by considering the plasma series resonances effect. Experimental measurements show that the self-excitation of the plasma series resonance, which arises in capacitive discharge due to the nonlinear interaction of plasma bulk and sheath, significantly enhances both the Ohmic and stochastic heating. The experimentally measured total dissipation, which is the sum of the Ohmic and stochastic heating, is found to increase significantly with decreasing pressure.

High-ohmic low-noise resistor for spectrometers with cooled semiconductor detectors

International Nuclear Information System (INIS)

Baldin, S.A.; Zhargal, Ch.; Zorin, G.N.; Laskus, T.; Osipenko, B.P.; Revenko, A.V.; Ryakhovskaya, T.I.

1985-01-01

BackgroUnd noise and energy resolution of a new type of resistors, designed to be used as a resistance in a feedback circuit of an X-ray spectrometer preamplifier are studied. The resistors are manufactured using the method of photolithography from high-resistance films, formed on the surface of lead-silicate glasses, as a result of redox processes during heat treatment in hydrogen atmosphere. Energy resolution of the spectrometer is measured on the line 55 FeKX(Mn) with the energy 5.8 keV. The conclusion is made, that the level of background noises in the resistors studied is approximately 4 times lower the level of noises in the KVM type resistors, which are commercially produced in industry

Approach to the effect of concrete resistivity in the corrosion of rebars in concrete

Directory of Open Access Journals (Sweden)

Andrade, C.

1987-09-01

Full Text Available The concrete resistivity has been considered as a factor which affects the corrosion rate of the rebars. Untill now the only relation found has been stablished between potentials and resistivity for steel embedded in Chloride contaminated concrete. In this paper a comparison between corrosion rate of rebars, determined from Polarization Resistance method, and Electrical Resistance data measured through the electronic compensation of the ohmic drop are given. The results of i_corr and R_ohm has been measured for rebars embedded in mortar made with three different types of cement. The specimens were submited to an accelerated carbonation. The relation between i_corr and R_ohm is quite similar in all the cases and suggests that the concrete electrical resistivity may be a controling factor of the corrosion rate of the rebars.

La resistividad del hormigón se ha venido considerando como uno de los factores que afectan a la velocidad de corrosión de las armaduras, aunque, hasta ahora, la única relación encontrada ha sido la establecida entre los potenciales y la resistividad para acero embebido en hormigón contaminado por cloruros. En este trabajo se establecen comparaciones entre velocidad de corrosión de las armaduras, medida a través del método de determinación de la Resistencia de Polarización, y los datos de resistencia eléctrica medidos a través de la compensación de caída óhmica. Los resultados de i_corr y R_ohm se han medido en armaduras embebidas en mortero fabricado con tres tipos de cemento a los que se ha sometido a un proceso de carbonatación acelerada. La relación entre i_corr y R_ohm es muy similar en todos los casos y sugiere que la resistencia del hormigón puede actuar como un factor controlante de la velocidad de corrosión de las armaduras.

Metal Contacts to Gallium Arsenide.

Science.gov (United States)

Ren, Fan

1991-07-01

While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

Contact metallurgy optimization for ohmic contacts to InP

DEFF Research Database (Denmark)

Clausen, Thomas; Pedersen, Arne Skyggebjerg; Leistiko, Otto

1991-01-01

AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowe...

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science; Volume 40; Issue 3. Effect of composition on the polarization and ohmic resistances of LSM/YSZ composite cathodes in solid oxide fuel cell. B SHRI PRAKASH S SENTHIL KUMAR S T ARUNA. Volume 40 Issue 3 June 2017 pp 441-452 ...

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures

Science.gov (United States)

Lin, Yu-Chuan; Li, Jun; de La Barrera, Sergio C.; Eichfeld, Sarah M.; Nie, Yifan; Addou, Rafik; Mende, Patrick C.; Wallace, Robert M.; Cho, Kyeongjae; Feenstra, Randall M.; Robinson, Joshua A.

2016-04-01

Two-dimensional tungsten diselenide (WSe2) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge transport across the interface of layered WSe2-graphene, a semiconductor to semimetal junction with a van der Waals (vdW) gap. In such cases, band alignment engineering is required to ensure a low-resistance, ohmic contact. In this work, we investigate the impact of graphene electronic properties on the transport at the WSe2-graphene interface. Electrical transport measurements reveal a lower resistance between WSe2 and fully hydrogenated epitaxial graphene (EGFH) compared to WSe2 grown on partially hydrogenated epitaxial graphene (EGPH). Using low-energy electron microscopy and reflectivity on these samples, we extract the work function difference between the WSe2 and graphene and employ a charge transfer model to determine the WSe2 carrier density in both cases. The results indicate that WSe2-EGFH displays ohmic behavior at small biases due to a large hole density in the WSe2, whereas WSe2-EGPH forms a Schottky barrier junction.Two-dimensional tungsten diselenide (WSe2) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge transport across the interface of layered WSe2-graphene, a semiconductor to semimetal junction with a van der Waals (vdW) gap. In such cases, band alignment engineering is required to ensure a low-resistance, ohmic contact. In this work, we investigate the impact of graphene electronic properties on the transport at the WSe2-graphene interface. Electrical transport measurements reveal a lower resistance between WSe2 and fully hydrogenated epitaxial graphene (EGFH) compared to WSe2 grown on partially hydrogenated epitaxial graphene (EGPH). Using low

Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

KAUST Repository

Bahabry, Rabab R; Hanna, Amir N; Kutbee, Arwa T; Gumus, Abdurrahman; Hussain, Muhammad Mustafa

2018-01-01

the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2

Role of stochasticity in turbulence and convective intermittent transport at the scrape off layer of Ohmic plasma in QUEST

International Nuclear Information System (INIS)

Banerjee, Santanu; Ishiguro, M.; Tashima, S.; Mishra, K.; Zushi, H.; Hanada, K.; Nakamura, K.; Idei, H.; Hasegawa, M.; Fujisawa, A.; Nagashima, Y.; Matsuoka, K.; Nishino, N.; Liu, H. Q.

2014-01-01

Statistical features of fluctuations are investigated using the fast camera imaging technique in the scrape of layer (SOL) of electron cyclotron resonance heated Ohmic plasma. Fluctuations in the SOL towards low field side are dominated by coherent convective structures (blobs). Two dimensional structures of the higher order moments (skewness s and kurtosis k) representing the shape of probability density function (PDF) are studied. s and k are seen to be functions of the magnetic field lines. s and k are consistently higher towards the bottom half of the vessel in the SOL showing the blob trajectory along the field lines from the top towards bottom of the vessel. Parabolic relation (k=As 2 +C) is observed between s and k near the plasma boundary, featuring steep density gradient region and at the far SOL. The coefficient A, obtained experimentally, indicates a shift of prominence from pure drift-wave instabilities towards fully developed turbulence. Numerical coefficients characterizing the Pearson system are derived which demonstrates the progressive deviation of the PDF from Gaussian towards gamma from the density gradient region, towards the far SOL. Based on a simple stochastic differential equation, a direct correspondence between the multiplicative noise amplitude, increased intermittency, and hence change in PDF is discussed

On radiative-magnetoconvective heat and mass transfer of a nanofluid past a non-linear stretching surface with Ohmic heating and convective surface boundary condition

Directory of Open Access Journals (Sweden)

Shweta Mishra

2016-12-01

Full Text Available In this paper magnetoconvective heat and mass transfer characteristics of a two-dimensional steady flow of a nanofluid over a non-linear stretching sheet in the presence of thermal radiation, Ohmic heating and viscous dissipation have been investigated numerically. The model used for the nanofluid incorporates the effects of the Brownian motion and the presence of nanoparticles in the base fluid. The governing equations are transformed into a system of nonlinear ordinary differential equations by using similarity transformation. The numerical solutions are obtained by using fifth order Runge–Kutta–Fehlberg method with shooting technique. The non-dimensional parameters on velocity, temperature and concentration profiles and also on local Nusselt number and Sherwood number are discussed. The results indicate that the local skin friction coefficient decreases as the value of the magnetic parameter increases whereas the Nusselt number and Sherwood number increase as the values of the Brownian motion parameter and magnetic parameter increase.

Current transport mechanisms in mercury cadmium telluride diode

Energy Technology Data Exchange (ETDEWEB)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

2016-08-28

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

Advanced Integrated TPS and Non Equilibrium Chemistry Instrumentation

Science.gov (United States)

2007-06-01

shown in Fig. 8. It contains the optical system in front of the five photodiodes. In addition, there are three high Ohmic resistors per channel, an AD...allowing a resolution of 3,5 kW/m². 2.6.4 Pressure measurement A silicon membran piezo -resistive pressure sensor manufactured by Entran with a

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

Science.gov (United States)

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-01-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials. PMID:27440253

A Survey on Modeling and Simulation of MEMS Switches and Its Application in Power Gating Techniques

OpenAIRE

Pramod Kumar M.P; A.S. Augustine Fletcher

2014-01-01

Large numbers of techniques have been developed to reduce the leakage power, including supply voltage scaling, varying threshold voltages, smaller logic banks, etc. Power gating is a technique which is used to reduce the static power when the sleep transistor is in off condition. Micro Electro mechanical System (MEMS) switches have properties that are very close to an ideal switch, with infinite off-resistance due to an air gap and low on-resistance due to the ohmic metal to m...

Design and experimental results of feedback control of Ohmic-heating transformer magnetic flux by LHCD power in HT-7 Tokamak

International Nuclear Information System (INIS)

Yiyun Huang

2006-01-01

In order to make a research on long pulse or even steady state operation with non-inductive drive in plasma discharge, a new feedback control scheme instead of the previous one has been designed and operated in HT-7 [HT-7 team presented by J. Li, et al., Plasma Phys. Control. Fusion 42 (2) (2000) 135-146] Tokamak experiment, 2004. Consumption of iron-core transformer magnetic flux (MFT) is feedback controlled for the first time by power of lower hybrid current drive (LHCD) P LH , when the Ohmic-heating circuit current can maintain the plasma current I P constant with another feedback control loop, which make MFT evolve at alternating-change state to avoid flux saturation. Plasma current I P can be maintained steadily up to 120s in this operation mode at reduced plasma parameters (I P ∼50-100KA, average density n-bar e =0.4-0.5x10 19 m -3 , P LH =100-200KW). Design and experimental results are presented in the paper, which including control model analysis, configurations of control system and MFT feedback control experiments in HT-7. The high voltage power supply (HVPS) of LHCD is the main controller that regulates the LHCD power into the plasma to control the MFT

The ohmic resistance effect for characterisation of carbon nanotube paste electrodes (CNTPEs)

Czech Academy of Sciences Publication Activity Database

Mikysek, T.; Stočes, M.; Švancara, I.; Ludvík, Jiří

2012-01-01

Roč. 2, č. 9 (2012), s. 3684-3690 ISSN 2046-2069 R&D Projects: GA MŠk LC510 Institutional research plan: CEZ:AV0Z40400503 Keywords : voltammetry * nanotubes * paste electrodes Subject RIV: CG - Electrochemistry Impact factor: 2.562, year: 2012

Measurements of the Townsend first ionization coefficient in pure isobutane under uniform electric fields; Medidas do primeiro coeficiente de Townsend de ionização no isobutano puro submetido a campos eletricos uniformes

Energy Technology Data Exchange (ETDEWEB)

Petri, Anna Raquel

2013-07-01

In this work are presented data of Townsend first ionization coefficient, α, in pure isobutane, obtained with a parallel plate chamber of resistive anode, for the reduced electric field range of 140 Td up to 230 Td. The adopted method is based on a new version of the Pulsed Townsend Technique, where the primary ionization is produced by the incidence of nitrogen pulsed laser beam in an aluminum electrode (cathode). The glass anode of high resistivity (ρ = 2 x 10{sup 12} Ω.cm) protects the detector against sparks. To validate the method, the α values were determined by comparing the ionization and avalanche electric currents in nitrogen, gas widely studied with well-established data in literature. This technique was successfully extended to obtain α parameters in pure isobutane. The presence of effects related to spatial charge, recombination and ohmic drop across the resistive anode was investigated by varying laser pulse repetition rate, its intensity and applied electric field. Of these secondary processes, only the ohmic drop was relevant and the reduced electric field values were corrected for it. The first Townsend coefficients obtained are compatible, within the experimental errors, with those determined with Magboltz 2 program versions 7.1 e 8.6. (author)

Non-ideal magnetohydrodynamics on a moving mesh

Science.gov (United States)

Marinacci, Federico; Vogelsberger, Mark; Kannan, Rahul; Mocz, Philip; Pakmor, Rüdiger; Springel, Volker

2018-05-01

In certain astrophysical systems, the commonly employed ideal magnetohydrodynamics (MHD) approximation breaks down. Here, we introduce novel explicit and implicit numerical schemes of ohmic resistivity terms in the moving-mesh code AREPO. We include these non-ideal terms for two MHD techniques: the Powell 8-wave formalism and a constrained transport scheme, which evolves the cell-centred magnetic vector potential. We test our implementation against problems of increasing complexity, such as one- and two-dimensional diffusion problems, and the evolution of progressive and stationary Alfvén waves. On these test problems, our implementation recovers the analytic solutions to second-order accuracy. As first applications, we investigate the tearing instability in magnetized plasmas and the gravitational collapse of a rotating magnetized gas cloud. In both systems, resistivity plays a key role. In the former case, it allows for the development of the tearing instability through reconnection of the magnetic field lines. In the latter, the adopted (constant) value of ohmic resistivity has an impact on both the gas distribution around the emerging protostar and the mass loading of magnetically driven outflows. Our new non-ideal MHD implementation opens up the possibility to study magneto-hydrodynamical systems on a moving mesh beyond the ideal MHD approximation.

Measurements of the Townsend first ionization coefficient in pure isobutane under uniform electric fields

International Nuclear Information System (INIS)

Petri, Anna Raquel

2013-01-01

In this work are presented data of Townsend first ionization coefficient, α, in pure isobutane, obtained with a parallel plate chamber of resistive anode, for the reduced electric field range of 140 Td up to 230 Td. The adopted method is based on a new version of the Pulsed Townsend Technique, where the primary ionization is produced by the incidence of nitrogen pulsed laser beam in an aluminum electrode (cathode). The glass anode of high resistivity (ρ = 2 x 10 12 Ω.cm) protects the detector against sparks. To validate the method, the α values were determined by comparing the ionization and avalanche electric currents in nitrogen, gas widely studied with well-established data in literature. This technique was successfully extended to obtain α parameters in pure isobutane. The presence of effects related to spatial charge, recombination and ohmic drop across the resistive anode was investigated by varying laser pulse repetition rate, its intensity and applied electric field. Of these secondary processes, only the ohmic drop was relevant and the reduced electric field values were corrected for it. The first Townsend coefficients obtained are compatible, within the experimental errors, with those determined with Magboltz 2 program versions 7.1 e 8.6. (author)

Impact of Ohmic-Assisted Decoction on Bioactive Components Extracted from Yacon (Smallanthus sonchifolius Poepp. Leaves: Comparison with Conventional Decoction

Directory of Open Access Journals (Sweden)

Forough Khajehei

2017-11-01

Full Text Available Yacon (Smallanthus sonchifolius Poepp. leaves are a potentially rich source of bioactive compounds, such as phenolic acids and flavonoids. In this study, the effect of the extraction method (ohmic-assisted decoction (OH-DE and decoction (DE, yacon cultivar (red and white, and leaf age (young and old on the quality/quantity of extracted phytochemicals were investigated. Extraction yield, energy consumption, total phenolic content (TPC, total flavonoid content (TFC, ABTS and DPPH radical scavenging activity, and ferric reducing antioxidant power (FRAP were determined. Additionally, HPLC-DAD was used to identify the major individual phenolic and flavonoid compounds of yacon leaves. The results showed that a three-way interaction of process-variables (extraction method×yacon cultivar×age of leaves influenced the extraction yield, TPC, TFC, ABTS, and DPPH radical scavenging activity, and FRAP, significantly (p < 0.05. However, energy consumption of the extraction process was only affected by method of extraction (p < 0.05 and was halved when OH-DE was applied as compared to DE alone. Additionally, the phytochemical quality of extracts was either improved or comparable when OH-DE was used for extraction. Also, it was shown that yacon leaves contained considerable amounts of caffeic acid, chlorogenic acid, ferrulic acid, myricetin, p-coumaric acid, and rutin, while leaves of the red cultivar had higher contents of each compound compared to leaves of the white cultivar.

Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

NARCIS (Netherlands)

Farmanbar Gelepordsari, M.; Brocks, G.

2016-01-01

High contact resistances have blocked the progress of devices based on MX2 (M = Mo, W; X = S, Se, Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. It is shown that i) one can remove the

Summary of experimental core turbulence characteristics in ohmic and electron cyclotron resonance heated discharges in T-10 tokamak plasmas

International Nuclear Information System (INIS)

Vershkov, V.A.; Shelukhin, D.A.; Soldatov, S.V.; Urazbaev, A.O.; Grashin, S.A.; Eliseev, L.G.; Melnikov, A.V.

2005-01-01

This report summarizes the results of experimental turbulence investigations carried out at T-10 for more than 10 years. The turbulence characteristics were investigated using correlation reflectometry, multipin Langmuir probe (MLP) and heavy ion beam probe diagnostics. The reflectometry capabilities were analysed using 2D full-wave simulations and verified by direct comparison using a MLP. The ohmic and electron cyclotron resonance heated discharges show the distinct transition from the core turbulence, having complex spectral structure, to the unstructured one in the scrape-off layer. The core turbulence includes 'broad band, quasi-coherent' features, arising due to the excitation of rational surfaces with high poloidal m-numbers, with a low frequency near zero and specific oscillations at 15-30 kHz. All experimentally measured properties of low frequency and high frequency quasi-coherent oscillations are in good agreement with predictions of linear theory for the ion temperature gradient/dissipative trapped electron mode instabilities. Significant local changes in the turbulence characteristics were observed at the edge velocity shear layer and in the core near q = 1 radius after switching off the electron cyclotron resonance heating (ECRH). The local decrease in the electron heat conductivity and decrease in the turbulence level could be evidence of the formation of an electron internal transport barrier. The dynamic behaviour of the core turbulence was also investigated for the case of fast edge cooling and the beginning phase of ECRH

Electric and magnetic fields effects on the transport properties of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Villafuerte, M. E-mail: mvillafeurte@herrera.unt.edu.ar; Duhalde, S. E-mail: sduhald@fi.uba.ar; Rubi, D.; Bridoux, G.; Heluani, S.; Sirena, M.; Steren, L

2004-05-01

The insulator to metal transition in manganites can be drastically influenced by internal factors, such as chemical composition, or under a variety of external perturbations, like magnetic or electric fields. In this work, the electrical resistance of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films was investigated using different constant voltages. At low temperature the conductivity of the films is non-Ohmic and moderate electric fields results in resistivity switching to metastable states. Comparisons between the influence of magnetic and electric fields on transport measurements are reported.

Electric and magnetic fields effects on the transport properties of La0.5Ca0.5MnO3 thin films

International Nuclear Information System (INIS)

Villafuerte, M.; Duhalde, S.; Rubi, D.; Bridoux, G.; Heluani, S.; Sirena, M.; Steren, L.

2004-01-01

The insulator to metal transition in manganites can be drastically influenced by internal factors, such as chemical composition, or under a variety of external perturbations, like magnetic or electric fields. In this work, the electrical resistance of La 0.5 Ca 0.5 MnO 3 thin films was investigated using different constant voltages. At low temperature the conductivity of the films is non-Ohmic and moderate electric fields results in resistivity switching to metastable states. Comparisons between the influence of magnetic and electric fields on transport measurements are reported

Current distribution effects in AC impedance spectroscopy of electroceramic point contact and thin film model electrodes

DEFF Research Database (Denmark)

Nielsen, Jimmi; Jacobsen, Torben

2010-01-01

the primary current distribution to the DC current distribution restricted to the Three-Phase-Boundary (TPB) zone introduces an error in the determination of the reaction resistance, Rreac = Z(freq. → 0) − Z(freq. → ∞). The error is estimated for different width of the effective TPB zone and a rule of thumb...... regarding its significance is provided. The associated characteristic impedance spectrum shape change is simulated and its origin discussed. Furthermore, the characteristic shape of impedance spectra of thin electroceramic film electrodes with lateral ohmic resistance is studied as a function...

ICRF [ion cyclotron range of frequencies] coupling on DIII-D and the implications on ICRF technology development

International Nuclear Information System (INIS)

Hoffman, D.J.; Baity, F.W.; Mayberry, M.J.; Swain, D.W.

1987-01-01

Low-power coupling tests have been carried out with a prototype ion cyclotron range of frequencies (ICRF) compact loop antenna on the DIII-D tokamak. Plasma load resistance values higher than originally calculated are measured in ohmic and L-mode, beam-heated plasmas. Load resistance decreases by a factor of ∼2 in H-mode operation. When edge localized modes (ELMs) occur, the antenna loading increases transiently to several ohms. Results indicate that fast-wave ICRF antenna coupling characteristics are highly sensitive to changes in the edge plasma profiles associated with the H-mode regime

Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

Science.gov (United States)

Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

1997-11-01

Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

A possible radiation-resistant solar cell geometry using superlattices

Science.gov (United States)

Goradia, C.; Clark, R.; Brinker, D.

1985-01-01

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Effects of cathode channel size and operating conditions on the performance of air-blowing PEMFCs

International Nuclear Information System (INIS)

Kim, Bosung; Lee, Yongtaek; Woo, Ahyoung; Kim, Yongchan

2013-01-01

Highlights: • Effect of cathode channel size on the air-blowing PEMFC is analyzed. • Performance and EIS tests of air-blowing PEMFCs are conducted. • Test conditions include the operating temperature, fan voltage, and anode humidity. • Flooding is a limiting factor for decreasing channel size at low temperature. • Water management is investigated by analyzing ohmic resistance. - Abstract: Air-blowing proton exchange membrane fuel cells (PEMFCs) have been developed as a potential new power source for portable electronic devices. However, air-blowing PEMFCs show lower performance than compressed-air PEMFCs because of their adverse operating conditions. In this study, the effects of the cathode channel size and operating conditions on the performance of the air-blowing PEMFC were analyzed. At the normal operating temperature, the performance of the air-blowing PEMFC improved with the decrease in the cathode channel size. However, at a low operating temperature and low fan voltage, massive flooding limits the decrease in the cathode channel size. In addition, water management in the air-blowing PEMFC was investigated by analyzing ohmic resistance. The transition current density between the humidification and the flooding region decreased with decreasing cathode channel size and operating temperature

Reference and counter electrode positions affect electrochemical characterization of bioanodes in different bioelectrochemical systems

KAUST Repository

Zhang, Fang

2014-06-16

The placement of the reference electrode (RE) in various bioelectrochemical systems is often varied to accommodate different reactor configurations. While the effect of the RE placement is well understood from a strictly electrochemistry perspective, there are impacts on exoelectrogenic biofilms in engineered systems that have not been adequately addressed. Varying distances between the working electrode (WE) and the RE, or the RE and the counter electrode (CE) in microbial fuel cells (MFCs) can alter bioanode characteristics. With well-spaced anode and cathode distances in an MFC, increasing the distance between the RE and anode (WE) altered bioanode cyclic voltammograms (CVs) due to the uncompensated ohmic drop. Electrochemical impedance spectra (EIS) also changed with RE distances, resulting in a calculated increase in anode resistance that varied between 17 and 31Ω (-0.2V). While WE potentials could be corrected with ohmic drop compensation during the CV tests, they could not be automatically corrected by the potentiostat in the EIS tests. The electrochemical characteristics of bioanodes were altered by their acclimation to different anode potentials that resulted from varying the distance between the RE and the CE (cathode). These differences were true changes in biofilm characteristics because the CVs were electrochemically independent of conditions resulting from changing CE to RE distances. Placing the RE outside of the current path enabled accurate bioanode characterization using CVs and EIS due to negligible ohmic resistances (0.4Ω). It is therefore concluded for bioelectrochemical systems that when possible, the RE should be placed outside the current path and near the WE, as this will result in more accurate representation of bioanode characteristics. © 2014 Wiley Periodicals, Inc.

Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe

Energy Technology Data Exchange (ETDEWEB)

Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru; Sheglov, D. V.; Latyshev, A. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2017-04-15

A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.

Turn on of new electronic paths in Fe-SiO{sub 2} granular thin film

Energy Technology Data Exchange (ETDEWEB)

Boff, M. A. S., E-mail: rs014676@via-rs.net, E-mail: marcoaureliosilveiraboff@gmail.com; Canto, B.; Mesquita, F.; Fraga, G. L. F.; Pereira, L. G. [Physics Institute–IF-UFRGS, C.P. 15051, 91501–970, Porto Alegre, Rio Grande do Sul (Brazil); Hinrichs, R. [Physics Institute–IF-UFRGS, C.P. 15051, 91501–970, Porto Alegre, Rio Grande do Sul (Brazil); Geosciences Institute–IG-UFRGS, C.P. 15001, 91501–970, Porto Alegre, Rio Grande do Sul (Brazil); Baptista, D. L. [Physics Institute–IF-UFRGS, C.P. 15051, 91501–970, Porto Alegre, Rio Grande do Sul (Brazil); Materials Metrology Division, INMETRO, 25250-020 Duque de Caxias, Rio de Janeiro (Brazil)

2014-10-06

The electrical properties of Fe-SiO{sub 2} have been studied in the low-field regime (eΔV ≪ k{sub B}T), varying the injected current and the bias potential. Superparamagnetism and a resistance drop of 4400 Ω (for a voltage variation of 15 V) were observed at room temperature. This resistance drop increased at lower temperatures. The electrical properties were described with the “Mott variable range hopping” model explaining the behavior of the electrical resistance and the electronic localization length as due to the activation of new electronic paths between more distant grains. This non-ohmic resistance at room temperature can be important for properties dependent of electrical current (magnetoresistance, Hall effect, and magnetoimpedance).

Anatomy-performance correlation in Ti-based contact metallizations on AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Mohammed, Fitih M.; Wang, Liang; Koo, Hyung Joon; Adesida, Ilesanmi

2007-01-01

A comprehensive study of the electrical and surface microstructural characteristics of Ti/Au, Ti/Al/Au, Ti/Mo/Au, and Ti/Al/metal/Au schemes, where metal is Ir, Mo, Nb, Pt, Ni, Ta, and Ti, has been carried out to determine the role of constituent components of multilayer contact metallizations on Ohmic contact formation on AlGaN/GaN heterostructures. Attempts have been made to elucidate the anatomy (composition-structure) performance correlation in these schemes. Evidences have been obtained for the necessity of the Al and metal barrier layer as well as an optimal amount of Ti for achieving low-resistance Ohmic contact formation. A strong dependence of electrical properties and intermetallic interactions on the type of metal barrier layer used was found. Scanning electron microscopy characterization, coupled with energy dispersive x-ray spectroscopy, has shown evidence for alloy aggregation, metal layer fragmentation, Al-Au solid solution formation, and possible Au and/or Al reaction with metal layer. Results from the present study provide insights on the active and the necessary role various components of a multilayer contact metallization play for obtaining excellent Ohmic contact formation in the fabrication of AlGaN/GaN high electron mobility transistors

Determination of SoH of Lead-Acid Batteries by Electrochemical Impedance Spectroscopy

Directory of Open Access Journals (Sweden)

Monika Kwiecien

2018-05-01

Full Text Available The aging mechanisms of lead-acid batteries change the electrochemical characteristics. For example, sulfation influences the active surface area, and corrosion increases the resistance. Therefore, it is expected that the state of health (SoH can be reflected through differentiable changes in the impedance of a lead-acid battery. However, for lead-acid batteries, no reliable SoH algorithm is available based on single impedance values or the spectrum. Additionally, the characteristic changes of the spectrum during aging are unknown. In this work, lead-acid test cells were aged under specific cycle regimes known as AK3.4, and periodic electrochemical impedance spectroscopy (EIS measurements and capacity tests were conducted. It was examined that single impedance values increased linearly with capacity decay, but with varying slopes depending on the pre-history of the cell and measurement frequency of impedance. Thereby, possible reasons for ineffective SoH estimation were found. The spectra were fitted to an equivalent electrical circuit containing, besides other elements, an ohmic and a charge-transfer resistance of the negative electrode. The linear increase of the ohmic resistance and the charge-transfer resistance were characterized for the performed cyclic aging test. Results from chemical analysis confirmed the expected aging process and the correlation between capacity decay and impedance change. Furthermore, the positive influence of charging on the SoH could be detected via EIS. The results presented here show that SoH estimation using EIS can be a viable technique for lead-acid batteries.

The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

Science.gov (United States)

Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

2010-12-28

Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

X-ray emission reduction and photon dose lowering by energy loss of fast electrons induced by return current during the interaction of a short-pulse high-intensity laser on a metal solid target

Science.gov (United States)

Compant La Fontaine, A.

2018-04-01

During the interaction of a short-pulse high-intensity laser with the preplasma produced by the pulse's pedestal in front of a high-Z metal solid target, high-energy electrons are produced, which in turn create an X-ray source by interacting with the atoms of the converter target. The current brought by the hot electrons is almost completely neutralized by a return current j → driven by the background electrons of the conductive target, and the force exerted on the hot electrons by the electric field E → which induces Ohmic heating j → .E → , produced by the background electrons, reduces the energy of the hot electrons and thus lowers the X-ray emission and photon dose. This effect is analyzed here by means of a simple 1-D temperature model which contains the most significant terms of the relativistic Fokker-Planck equation with electron multiple scattering, and the energy equations of ions, hot, and cold electrons are then solved numerically. This Ohmic heating energy loss fraction τOh is introduced as a corrective term in an improved photon dose model. For instance, for a ps laser pulse with 10 μm spot size, the dose obtained with a tantalum target is reduced by less than about 10% to 40% by the Ohmic heating, depending upon the plasma scale length, target thickness, laser parameters, and in particular its spot size. The laser and plasma parameters may be optimized to limit the effect of Ohmic heating, for instance at a small plasma scale length or small laser spot size. Conversely, others regimes not suitable for dose production are identified. For instance, the resistive heating is enhanced in a foam target or at a long plasma scale length and high laser spot size and intensity, as the mean emission angle θ0 of the incident hot electron bunch given by the ponderomotive force is small; thus, the dose produced by a laser interacting in a gas jet may be inhibited under these circumstances. The resistive heating may also be maximized in order to reduce

Innovative microbial fuel cell for electricity production from anaerobic reactors

DEFF Research Database (Denmark)

Min, Booki; Angelidaki, Irini

2008-01-01

A submersible microbial fuel cell (SMFC) was developed by immersing an anode electrode and a cathode chamber in an anaerobic reactor. Domestic wastewater was used as the medium and the inoculum in the experiments. The SMFC could successfully generate a stable voltage of 0.428 ± 0.003 V with a fixed......, a large portion of voltage drop was caused by the ohmic (electrolyte) resistance of the medium present between two electrodes, although the two electrodes were closely positioned (about 3 cm distance; internal resistance = 35 ± 2 Ω). The open circuit potential (0.393 V vs. a standard hydrogen electrode...

Ohmic heating of peaches in the wide range of frequencies (50 Hz to 1 MHz).

Science.gov (United States)

Shynkaryk, Mykola V; Ji, Taehyun; Alvarez, Valente B; Sastry, Sudhir K

2010-09-01

The ohmic heating (OH) rate of peaches was studied at fixed electric field strength of 60 V.cm⁻¹, square-shaped instant reversal bipolar pulses, and frequencies varying within 50 Hz to 1 MHz. Thermal damage of tissue was evaluated from electrical admittivity. It showed that the time for half disruption (τ(T)) of tissue was required more than 10 h at temperatures below 40 °C. However, cellular thermal disruption occurred almost instantly (τ(T) 90 °C). Electrical conductivity σ(o) and admittivity σ(o)* of tissue at T(o)= 0 °C and their temperature coefficients (m, m*) were calculated. For freeze-thawed tissues, σ and σ* as well as m and m* were nearly indifferent to the frequency. However, for the intact tissue, both σ(o), σ(o)* and m, m* were frequency dependent. For freeze-thawed product, the power factor (P) was approximately equal to 1 and indifferent to the frequency and temperature. On the other hand, strong frequency dependence was observed for intact tissue with the minimum P approximately equal to 0.68 in the range of tens of kHz. The time required to reach a target temperature t(f) was evaluated. The t(f) increased with frequency up to the middle of the range of tens of kHz and thereafter continuously decreased. Samples exposed to the low-frequency electric field demonstrated faster electro-thermal damage rates. The textural relaxation data supported more intense damage kinetics at low-frequency OH. It has been demonstrated that a combination of high-frequency OH with pasteurization at moderate temperature followed by rapid cooling minimizes texture degradation of peach tissue. In this study, we investigated the electric field frequency effect on the rate of OH of peaches. It was shown that the time required for reaching the target temperature is strongly dependent upon the frequency. Samples exposed to low-frequency OH demonstrated higher electro-thermal damage rates. It has been shown that the combination of high-frequency OH with

Synergetic aspects of gas-discharge: lateral patterns in dc systems with a high ohmic barrier

Science.gov (United States)

Purwins, H.-G.; Stollenwerk, L.

2014-12-01

The understanding of self-organized patterns in spatially extended nonlinear dissipative systems is one of the most challenging subjects in modern natural sciences. Such patterns are also referred to as dissipative structures. We review this phenomenon in planar low temperature dc gas-discharge devices with a high ohmic barrier. It is demonstrated that for these systems a deep qualitative understanding of dissipative structures can be obtained from the point of view of synergetics. At the same time, a major contribution can be made to the general understanding of dissipative structures. The discharge spaces of the experimentally investigated systems, to good approximation, have translational and rotational symmetry by contraction. Nevertheless, a given system may exhibit stable current density distributions and related patterns that break these symmetries. Among the experimentally observed fundamental patterns one finds homogeneous isotropic states, fronts, periodic patterns, labyrinth structures, rotating spirals, target patterns and localized filaments. In addition, structures are observed that have the former as elementary building blocks. Finally, defect structures as well as irregular patterns are common phenomena. Such structures have been detected in numerous other driven nonlinear dissipative systems, as there are ac gas-discharge devices, semiconductors, chemical solutions, electrical networks and biological systems. Therefore, from the experimental observations it is concluded that the patterns in planar low temperature dc gas-discharge devices exhibit universal behavior. From the theoretical point of view, dissipative structures of the aforementioned kind are also referred to as attractors. The possible sets of attractors are an important characteristic of the system. The number and/or qualitative nature of attractors may change when changing parameters. The related bifurcation behavior is a central issue of the synergetic approach chosen in the present

Synergetic aspects of gas-discharge: lateral patterns in dc systems with a high ohmic barrier

International Nuclear Information System (INIS)

Purwins, H-G; Stollenwerk, L

2014-01-01

The understanding of self-organized patterns in spatially extended nonlinear dissipative systems is one of the most challenging subjects in modern natural sciences. Such patterns are also referred to as dissipative structures. We review this phenomenon in planar low temperature dc gas-discharge devices with a high ohmic barrier. It is demonstrated that for these systems a deep qualitative understanding of dissipative structures can be obtained from the point of view of synergetics. At the same time, a major contribution can be made to the general understanding of dissipative structures. The discharge spaces of the experimentally investigated systems, to good approximation, have translational and rotational symmetry by contraction. Nevertheless, a given system may exhibit stable current density distributions and related patterns that break these symmetries. Among the experimentally observed fundamental patterns one finds homogeneous isotropic states, fronts, periodic patterns, labyrinth structures, rotating spirals, target patterns and localized filaments. In addition, structures are observed that have the former as elementary building blocks. Finally, defect structures as well as irregular patterns are common phenomena. Such structures have been detected in numerous other driven nonlinear dissipative systems, as there are ac gas-discharge devices, semiconductors, chemical solutions, electrical networks and biological systems. Therefore, from the experimental observations it is concluded that the patterns in planar low temperature dc gas-discharge devices exhibit universal behavior. From the theoretical point of view, dissipative structures of the aforementioned kind are also referred to as attractors. The possible sets of attractors are an important characteristic of the system. The number and/or qualitative nature of attractors may change when changing parameters. The related bifurcation behavior is a central issue of the synergetic approach chosen in the present

Development of Near-Field Microwave Microscope with the Functionality of Scanning Tunneling Spectroscopy

Science.gov (United States)

Machida, Tadashi; Gaifullin, Marat B.; Ooi, Shuuich; Kato, Takuya; Sakata, Hideaki; Hirata, Kazuto

2010-11-01

We describe the details of an original near-field scanning microwave microscope, developed for simultaneous measurements of local density-of-states (LDOS) and local ohmic losses (LOL). Improving microwave detection systems, we have succeeded in distinguishing the LDOS and LOL even between two low resistance materials; gold and highly orientated pyrolitic graphite. The experimental data indicate that our microscope holds a capability to investigate both LDOS and LOL in nanoscale.

Study on the makinq of Cockroft Walton high tension

International Nuclear Information System (INIS)

Hutapea, Sumihar.

1976-01-01

A prototype of a generator is being developed at the GAMA Research Center. Experience in working with some components, high voltage capacitor, column, and potential divider is discussed. High voltage diode, the type which is usually used in television, is used. The tension of the generator is measured by using the high ohmic resistence of 4000 megaohm. The maximum tension can be reached no more than 150000 volts. (author)

Spherical tokamak without external toroidal fields

International Nuclear Information System (INIS)

Kaw, P.K.; Avinash, K.; Srinivasan, R.

2001-01-01

A spherical tokamak design without external toroidal field coils is proposed. The tokamak is surrounded by a spheromak shell carrying requisite force free currents to produce the toroidal field in the core. Such equilibria are constructed and it is indicated that these equilibria are likely to have robust ideal and resistive stability. The advantage of this scheme in terms of a reduced ohmic dissipation is pointed out. (author)

Developments in cathodic protection. Ontwikkelingen in de kathodische bescherming

Energy Technology Data Exchange (ETDEWEB)

Van Bruchem, H. (VEG-Gasinstituut NV, Apeldoorn (Netherlands))

1990-07-01

Developments in cathodic protection of underground steel pipelines used for the transport of natural gas in the Netherlands are outlined. Besides criteria like applied negative potential in relation to ohmic resistances of soil, overprotection and the influence of stray currents, for instance in the vicinity of railroad tracks, are discussed. Control measurements of cathodic protection are described; a new method, wave form analysis, is outlined. 5 figs., 4 refs., 5 ills.

III-V/Si wafer bonding using transparent, conductive oxide interlayers

Energy Technology Data Exchange (ETDEWEB)

Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

2015-06-29

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

Performance of resistive microcalorimeters and bolometers

International Nuclear Information System (INIS)

Galeazzi, M.

2004-01-01

Despite the impressive results achieved by microcalorimeters and bolometers, their performance is still significantly worse than that predicted by Mather's ideal model (Appl. Opt. 21 (1982) 1125). The difference is due both to non-ideal effects and to excess noise of unknown origin. The non-ideal effects have been recently quantified and include hot-electron effect, absorber decoupling, thermometer non-ohmic behavior, and all related extra noise sources. The excess noise affects primarily Transition Edge Sensors (TES) and is currently under experimental and theoretical investigation. This paper reviews the origin of non-ideal effects in microcalorimeters and bolometers and their effect on energy resolution and noise equivalent power. It also reviews the results on the characterization and suppression of the excess noise in TES, and the recent theoretical investigations to explain its origin in relation to fundamental physics in superconductors

Lifetime limitations of ohmic, contacting RF MEMS switches with Au, Pt and Ir contact materials due to accumulation of ‘friction polymer’ on the contacts

International Nuclear Information System (INIS)

Czaplewski, David A; Nordquist, Christopher D; Dyck, Christopher W; Patrizi, Gary A; Kraus, Garth M; Cowan, William D

2012-01-01

We present lifetime limitations and failure analysis of many packaged RF MEMS ohmic contacting switches with Au–Au, Au–Ir, and Au–Pt contact materials operating with 100 µN of contact force per contact in hermetically sealed glass wall packages. All metals were tested using the same switch design in a controlled environment to provide a comparison between the performance of the different materials and their corresponding failure mechanisms. The switch lifetimes of the different contact materials varied from several hundred cycles to 200 million cycles with different mechanisms causing failures for different contact materials. Switches with Au–Au contacts failed due to adhesion when thoroughly cleaned while switches with dissimilar metal contacts (Au–Ir and Au–Pt) operated without adhesion failures but failed due to carbon accumulation on the contacts even in a clean, packaged environment as a result of the catalytic behavior of the contact materials. Switch lifetimes correlated inversely with catalytic behavior of the contact metals. The data suggests the path to increase switch lifetime is to use favorable catalytic materials as contacts, design switches with higher contact forces to break through any residual contamination, and use cleaner, probably smaller, packages. (paper)

[Resistance risk, cross-resistance and biochemical resistance mechanism of Laodelphax striatellus to buprofezin].

Science.gov (United States)

Mao, Xu-lian; Liu, Jin; Li, Xu-ke; Chi, Jia-jia; Liu, Yong-jie

2016-01-01

In order to investigate the resistance development law and biochemical resistance mechanism of Laodelphax striatellus to buprofezin, spraying rice seedlings was used to continuously screen resistant strains of L. striatellus and dipping rice seedlings was applied to determine the toxicity and cross-resistance of L. striatellus to insecticides. After 32-generation screening with buprofezin, L. striatellus developed 168.49 folds resistance and its reality heritability (h2) was 0.11. If the killing rate was 80%-90%, L. striatellus was expected to develop 10-fold resistance to buprofezin only after 5 to 6 generations breeding. Because the actual reality heritability of field populations was usually lower than that of the resistant strains, the production of field populations increasing with 10-fold resistance would need much longer time. The results of cross-resistance showed that resistant strain had high level cross-resistance with thiamethoxam and imidacloprid, low level cross-resistance with acetamiprid, and no cross-resistance with pymetrozine and chlorpyrifos. The activity of detoxification enzymes of different strains and the syergism of synergist were measured. The results showed that cytochrome P450 monooxygenase played a major role in the resistance of L. striatellus to buprofezin, the esterase played a minor role and the GSH-S-transferase had no effect. Therefore, L. striatellus would have high risk to develop resistance to buprofezin when used in the field and might be delayed by using pymetrozine and chlorpyrifos.

Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

International Nuclear Information System (INIS)

Hwang, J. D.; Lin, C. C.; Chen, W. L.

2006-01-01

A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

Radial transport effects on ECCD in the TCV and DIII-D tokamaks and on Ohmic discharges in the MST RFP

International Nuclear Information System (INIS)

Harvey, R.W.; Sauter, O.; Nikkola, P.; Prater, R.; O'Connell, R.; Forest, C.B.

2003-01-01

The comprehensive CQL3D Fokker-Planck/Quasilinear simulation code has been benchmarked against experiment over a wide range of electron cyclotron conditions in the DIII-D tokamak (C.C. Petty et al., 14. Topical Conf. on RF Power in Plasmas, 2002). The same code, in disagreement with experiment, gives 560 kA of ECCD for a well documented, completely ECCD-driven, 100 kA TCV shot [O. Sauter et al, PRL, 2000]. Recent work (R.W. Harvey et al, Phys. Rev. Lett., 2002) has resolved the differences as due to radial transport at a level closely consistent with ITER scaling. Transport does not substantially affect DIII-D ECCD, but at similar ECH power has an overwhelming effect on the much smaller TCV. The transport is consistent with electrostatic-type diffusion (D ρρ constant in velocity space) and not with a magnetic-type diffusion (D ρρ ∝ |v || |). Fokker-Planck simulation of Ohmic reversed field pinch (RFP) discharges in the MST device reveals transport velocity dependence stronger than |v || |) will give agreement with current and soft X-ray spectra in standard discharges, but in the higher confinement, current profile controlled PPCD discharges, transport is again electrostatic-like. This is consistent with the object of PPCD, which is to replace magnetic turbulence driven current with auxiliary CD to improve transport. The tokamak and high-confinement RFP results mutually reinforce the constant-in-velocity-space 'electrostatic-type turbulence' conclusion. The steady-state energy and toroidal current are governed by the same radial transport equation. (authors)

RADIAL TRANSPORT EFFECTS ON ECCD IN THE TCV AND DIII-D TOKAMAKS AND ON OHMIC DISCHARGES IN THE MST RFP

International Nuclear Information System (INIS)

HARVEY, R.W.; SAUTER, O.; PRATER, R.; NIKKOLA, P.; O'CONNELL, R.; FOREST, C.B.

2002-01-01

The comprehensive CQL3D Fokker-Planck/Quasilinear simulation code has been benchmarked against experiment over a wide range of electron cyclotron conditions in the DIII-D tokamak (C.C. Petty et al., 14th Topical Conf. on RF Power in Plasmas, 2002). The same code, in disagreement with experiment, gives 560 kA of ECCD for a well documented, completely ECCD-driven, 100 kA TCV shot [O. Sauter et al, PRL, 2000]. Recent work (R.W. Harvey et al, Phys. Rev. Lett., 2002) has resolved the differences as due to radial transport at a level closely consistent with ITER scaling. Transport does not substantially affect DIII-D ECCD, but at similar ECH power has an overwhelming effect on the much smaller TCV. The transport is consistent with electrostatic-type diffusion (D ρρ constant in velocity-space) and not with a magnetic-type diffusion (D ρρ ∝ |v(parallel)|). Fokker-Planck simulation of Ohmic reversed field pinch (RFP) discharges in the MST device reveals transport velocity dependence stronger than |v(parallel)| will give agreement with current and soft X-ray spectra in standard discharges, but in the higher confinement, current profile controlled PPCD discharges, transport is again electrostatic-like. This is consistent with the object of PPCD, which is to replace magnetic turbulence driven current with auxiliary CD to improve transport. The tokamak and high-confinement RFP results mutually reinforce the constant-in-velocity-space ''electrostatic-type turbulence'' conclusion. The steady-state energy and toroidal current are governed by the same radial transport equation

The fabrication of a back-gated high electron mobility transistor - a novel approach using MBE regrowth on an in situ ion beam patterned epilayer

International Nuclear Information System (INIS)

Linfield, E.H.; Jones, G.A.C.; Ritchie, D.A.; Thompson, J.H.

1993-01-01

A new technique for the fabrication of GaAs/AlGaAs back-gated high electron mobility transistors (HEMTs) is described in this paper. First we demonstrate that a dose of > 2 x 10 13 cm -2 Ga ions at an energy of 10 keV can be used to damage a 67 nm n + GaAs layer, rendering the implanted regions non-conducting. After implantation the epilayer has a 4 K sheet resistivity which is increased by a factor of ∼ 10 7 when compared with the original unimplanted value. This isolation procedure is then used to form a patterned back-gated HEMT by MBE regrowth on top of an in situ ion-implanted n + GaAs layer. The resulting structure is designed so that the back gate is rendered highly resistive under the regions where the ohmic contacts to the two-dimensional electron gas (2DEG) are formed, thus making shallow ohmic contacts unnecessary. The results obtained characteristic of a high-quality 2DEG with mobility limited by remote ionized impurity scattering. This technique can therefore be used as a means of controlling the 2DEG carrier concentration, whilst leaving the surface of the HEMT structure free for conventional lithographic processing. (Author)

Spectral memory of photoconduction of high-resistance ZnSe

International Nuclear Information System (INIS)

Gorya, O.S.; Kovalev, L.E.; Korotkov, V.A.; Malikova, L.V.; Simashkevich, A.V.

1989-01-01

Relaxation of photoconductivity of ZnSr crystal in case of a photoconductivity burst when exposing a sample to light with quantum energy E=1.305 eV after preliminary excitation by light with quantum energy 2.61 eV. The phenomenon of nonequilibrium photoconductivity considered permitted to suggest a new method for determination of the energy position of local levels in the forbidden band of semiconductors. Investigations carried out permitted to detect in ZnSe acceptors, lying in the forbidden band, as well as deep centers. It is supposed that the effect of spectral memory of photoconductivity of high-ohmic crystals (ZnSe, ZnS, CdS) relates to the existence of defects with metastable states in them

Palladium silicide - a new contact for semiconductor radiation detectors

International Nuclear Information System (INIS)

Totterdell, D.H.J.

1981-11-01

Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd 2 Si is discussed. A palladium film 100A thick is deposited at 300 0 C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

Two-dimensional heat conducting simulation of plasma armatures

International Nuclear Information System (INIS)

Huerta, M.A.; Boynton, G.

1991-01-01

This paper reports on our development of a two-dimensional MHD code to simulate internal motions in a railgun plasma armature. The authors use the equations of resistive MHD, with Ohmic heating, and radiation heat transport. The authors use a Flux Corrected Transport code to advance all quantities in time. Our runs show the development of complex flows, subsequent shedding of secondary arcs, and a drop in the acceleration of the armature

A resistência olha a resistência

Directory of Open Access Journals (Sweden)

Jorge Ponciano Ribeiro

Full Text Available Resistência é um processo humano que acontece quando a pessoa se encontra sob algum tipo de ameaça. Não é essencialmente um acontecimento psicoterapêutico. Ocorre na terapia não como uma oposição a si mesmo ou ao terapeuta, mas como uma forma de se ajustar a uma nova situação. A resistência, é por natureza, a atualização do instinto de auto-preservação. E o organismo inteligentemente segue a lei da preferência. Resistência é uma forma de contato que não pode ser destruída, mas administrada, porque ela surge como uma defesa da totalidade vivenciada pela pessoa. A Resistência é, às vezes, resistência e awareness mais que ao contato. Ela revela mais o caminho seguido do que oculta a caminhada feita. A resistência é um processo natural, porque o corpo que não resiste, morre, mas falamos em processos de auto-regulação organísmica. Valorizamos mais o que mantêm a resistência funcionando do que à própria resistência. O terapeuta também resiste, ou seja, ele se auto-regula na sua relação com o cliente. Não questionamos a resistência, mas o processo que a mantêm. Trabalhamos com nove mecanismos de defesa, também tradicionalmente, chamados de resistência.

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

International Nuclear Information System (INIS)

Jiang Wei; Gao Hong; Xu Ling-Ling; Ma Jia-Ning; Zhang E; Wei Ping; Lin Jia-Qi

2011-01-01

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ = 505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Numerical calculation of transient field effects in quenching superconducting magnets

CERN Document Server

Schwerg, Nikolai; Russenschuck, Stephan

2009-01-01

The maximum obtainable magnetic induction of accelerator magnets, relying on normal conducting cables and iron poles, is limited to around 2 T because of ohmic losses and iron saturation. Using superconducting cables, and employing permeable materials merely to reduce the fringe field, this limit can be exceeded and fields of more than 10 T can be obtained. A quench denotes the sudden transition from the superconducting to the normal conducting state. The drastic increase in electrical resistivity causes ohmic heating. The dissipated heat yields a temperature rise in the coil and causes the quench to propagate. The resulting high voltages and excessive temperatures can result in an irreversible damage of the magnet - to the extend of a cable melt-down. The quench behavior of a magnet depends on numerous factors, e.g. the magnet design, the applied magnet protection measures, the external electrical network, electrical and thermal material properties, and induced eddy current losses. The analysis and optimizat...

Scaling of energy confinement with minor radius, current and density in Doublet III Ohmically heated plasmas

International Nuclear Information System (INIS)

Ejima, S.; Petrie, T.W.; Riviere, A.C.

1982-01-01

The dependence of plasma energy confinement on minor radius, density and plasma current is described for Ohmically heated near-circular plasmas in Doublet III. A wide range of parameters is used for the study of scaling laws; the plasma minor radius defined by the flux surface in contact with limiter is varied by a factor of 2 (a = 44, 32, and 23 cm), the line average plasma density, nsub(e)-bar, is varied by a factor of 20 from 0.5 to 10 x 10 13 cm -3 (nsub(e)-bar R 0 /Bsub(T) = 0.3 to 6 x 10 14 cm -2 .kG -1 ) and the plasma current, I, is varied by a factor of 6 from 120 to 718 kA. The range of the limiter safety factor, qsub(L), is from 2 to 12. - For plasmas with a = 23 and 32 cm, the scaling law at low nsub(e)-bar for the gross electron energy confinement time can be written as (s, cm) tausub(Ee)sup(G) approx.= 3.6 x 10 -19 nsub(e)-bar a 2 qsub(c)sup(3/4), where qsub(c) = 2πa 2 Bsub(T)/μ 0 IR 0 . For the 44-cm plasmas, tausub(Ee)sup(G) is about 1.8 times less than predicted by this scaling, possibly owing to the change in limiter configuration and small plasma-wall separation and/or the aspect ratio change. At high nsub(e)-bar, tausub(Ee)sup(G) saturates and in many cases decreases with nsub(e)-bar but increases with I in a classical-like manner. The dependence of tausub(Ee)sup(G) on a is considerably weakened. The confinement behaviour can be explained by taking an ion thermal conductivity 2 to 7 times that given by Hinton-Hazeltine's neoclassical theory with a lumped-Zsub(eff) impurity model. Within this range the enhancement factor increases with a or a/R 0 . The electron thermal conductivity evaluated at half-temperature radius where most of the thermal insulation occurs sharply increases with average current density within that radius, but does not depend on a within the uncertainties of the measurements. (author)

Monochromator for synchrotron light with temperature controlled by electrical current on silicon crystal

Energy Technology Data Exchange (ETDEWEB)

Cusatis, Cesar; Souza, Paulo E.N. [Universidade Federal do Parana (LORXI/UFPR), Curitiba, PR (Brazil). Dept. de Fisica. Lab. de Optica de Raios X e Instrumentacao; Franco, Margareth Kobayaski; Kakuno, Edson [Laboratorio Nacional de Luz Sincroton (LNLS), Campinas, SP (Brazil); Gobbi, Angelo; Carvalho Junior, Wilson de [Centro de Pesquisa e Desenvolvimento em Telecomunicacoes (CPqD), Campinas, SP (Brazil)

2011-07-01

Full text. doped silicon crystal was used simultaneously as a monochromator, sensor and actuator in such way that its temperature could be controlled. Ohmic contacts allowed resistance measurements on a perfect silicon crystal, which were correlated to its temperature. Using the ohmic contacts, an electrical current caused Joule heating on the monochromator that was used to control its temperature. A simple stand-alone electronic box controlled the system. The device was built and tested with white beam synchrotron light on the double crystal monochromator of the XRD line of LNLS, Laboratorio Nacional de Luz Sincrotron, Campinas. The first crystal of a double crystal monochromator determines the energy that is delivered to a synchrotron experimental station and its temperature instability is a major source of energy and intensity instability. If the (333) silicon monochromator is at theta Bragg near 45 degree the variation of the diffraction angle is around one second of arc per degree Kelvin. It may take several minutes for the first crystal temperature to stabilize at the beginning of the station operation when the crystal and its environment are cold. With water refrigeration, the average overall temperature of the crystal may be constant, but the temperature of the surface changes with and without the white beam. The time used to wait for stabilization of the beam energy/intensity is lost unless the temperature of the crystal surface is kept constant. One solution for keeping the temperature of the monochromator and its environment constant or nearly constant is Joule heating it with a controlled small electrical current flowing on the surface of a doped perfect crystal. When the white beam is on, this small amount of extra power will be more concentrated at the beam footpath because the resistance is lower in this region due to the higher temperature. In addition, if the crystal itself is used to detect the temperature variation by measuring the electrical

Modeling the ion transfer and polarization of ion exchange membranes in bioelectrochemical systems.

Science.gov (United States)

Harnisch, Falk; Warmbier, Robert; Schneider, Ralf; Schröder, Uwe

2009-06-01

An explicit numerical model for the charge balancing ion transfer across monopolar ion exchange membranes under conditions of bioelectrochemical systems is presented. Diffusion and migration equations have been solved according to the Nernst-Planck Equation and the resulting ion concentrations, pH values and the resistance values of the membrane for different conditions were computed. The modeling results underline the principle limitations of the application of ion exchange membranes in biological fuel cells and electrolyzers, caused by the inherent occurrence of a pH-gradient between anode and cathode compartment, and an increased ohmic membrane resistance at decreasing electrolyte concentrations. Finally, the physical and numerical limitations of the model are discussed.

Non-Markovian entanglement dynamics of noisy continuous-variable quantum channels

International Nuclear Information System (INIS)

An, J.-H.; Zhang, W.-M.

2007-01-01

We investigate the entanglement dynamics of continuous-variable quantum channels in terms of an entangled squeezed state of two cavity fields in a general non-Markovian environment. Using the Feynman-Vernon influence functional theory in the coherent-state representation, we derive an exact master equation with time-dependent coefficients reflecting the non-Markovian influence of the environment. The influence of environments with different spectral densities, e.g., Ohmic, sub-Ohmic, and super-Ohmic, is numerically studied. The non-Markovian process shows its remarkable influence on the entanglement dynamics due to the sensitive time dependence of the dissipation and noise functions within the typical time scale of the environment. The Ohmic environment shows a weak dissipation-noise effect on the entanglement dynamics, while the sub-Ohmic and super-Ohmic environments induce much more severe noise. In particular, the memory of the system interacting with the environment contributes a strong decoherence effect to the entanglement dynamics in the super-Ohmic case

Measurement of Dynamic Resistance in Resistance Spot Welding

DEFF Research Database (Denmark)

Wu, Pei; Zhang, Wenqi; Bay, Niels

Through years, the dynamic resistance across the electrodes has been used for weld quality estimation and contact resistance measurement. However, the previous methods of determining the dynamic resistance were mostly based on measuring the voltage and current on the secondary side of the transfo......Through years, the dynamic resistance across the electrodes has been used for weld quality estimation and contact resistance measurement. However, the previous methods of determining the dynamic resistance were mostly based on measuring the voltage and current on the secondary side...... of the transformer in resistance welding machines, implying defects from induction noise and interference with the leads connected to the electrodes for measuring the voltage. In this study, the dynamic resistance is determined by measuring the voltage on the primary side and the current on the secondary side...

Free-standing silicon micro machined resistors from (110) substrate

International Nuclear Information System (INIS)

Bernardini, R.; Diligenti, A.; Nannini, A.; Piotto, M.

1998-01-01

A simple process to obtain silicon planes released from the substrate and provided with large area pads for ohmic contacts is described. Resistors 500 μm long with a 40 μm x 1 μm cross section were obtained. Resistance measurements showed that the current flows in a reduced cross section, probably owing to the presence of a superficial depletion layer. Preliminary magnetoresistance measurements are presented. Reduction of the resistor cross section can be obtained by thermal oxidation

Antenna loading and electron heating experiments of ICRF wave in TNT-A tokamak

International Nuclear Information System (INIS)

Shinohara, Shunjiro; Asakura, Nobuyuki; Naito, Masahiro; Miyamoto, Kenro

1984-01-01

Antenna loading resistance and electron heating effects of ICRF wave were investigated in TNT-A tokamak. Lodaing resistance increased with the mean plasma density and decreased with the input power. The effect of the distance between the plasma and antenna surface on loading resistance was studied and had good agreements with the calculated results. The increase in the soft Xray emissivity was larger in the presence of ion-ion hybrid and/or ion cyclotron resonance layer in the plasma than that in the absence of them. With the absorbed power up to two times of the ohmic power, the central electron temperature increased by 20%, the soft Xray emissivity increased by 80% and the mean plasma density decreased by 10%, while the total radiation loss increased slightly (by 15%). (author)

The effect of correlations on the non-ohmic behavior of the small-polaron hopping conductivity in 1D and 3D disordered systems

International Nuclear Information System (INIS)

Dimakogianni, M; Triberis, G P

2010-01-01

According to percolation theory the investigation of charge transport in disordered systems is equivalent to the study of the possibility of the passage of the carriers through a random network of impedances which interconnect the different lattice sites. When the site energies are not the same, the energy of a site affects the incoming as well as the outgoing impedances connected to the given site and this gives rise to correlations between neighboring impedances. This new condition characterizes the transport process and imposes the evaluation of the average number of sites accessible by a bond from a given site for all possible configurations of sites that satisfy the percolation condition. The generalized molecular crystal model, appropriate for the study of small-polaron hopping transport in disordered systems, and the Kubo formula permit the evaluation of these impedances. Taking correlations into account, theoretical percolation considerations applicable to one-dimensional and three-dimensional disordered systems, lead to analytical expressions for the temperature and electric field dependence of the DC conductivity at high (multi-phonon-assisted hopping) and low (few-phonon-assisted hopping) temperatures. The theoretical analysis reveals the effect of correlations on the non-ohmic behavior of the small-polaron hopping conductivity and permits the evaluation of the maximum hopping distance. Quantitative estimates of this effect are presented comparing the theoretical results, including correlations with those ignoring them, previously reported, applying them to recent experimental data for a wide temperature range and from low up to moderate electric fields.

Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process

Science.gov (United States)

Blázquez, O.; Martín, G.; Camps, I.; Mariscal, A.; López-Vidrier, J.; Ramírez, J. M.; Hernández, S.; Estradé, S.; Peiró, F.; Serna, R.; Garrido, B.

2018-06-01

The resistive switching properties of silicon-aluminium oxynitride (SiAlON) based devices have been studied. Electrical transport mechanisms in both resistance states were determined, exhibiting an ohmic behaviour at low resistance and a defect-related Poole‑Frenkel mechanism at high resistance. Nevertheless, some features of the Al top-electrode are generated during the initial electroforming, suggesting some material modifications. An in-depth microscopic study at the nanoscale has been performed after the electroforming process, by acquiring scanning electron microscopy and transmission electron microscopy images. The direct observation of the devices confirmed features on the top electrode with bubble-like appearance, as well as some precipitates within the SiAlON. Chemical analysis by electron energy loss spectroscopy has demonstrated that there is an out-diffusion of oxygen and nitrogen ions from the SiAlON layer towards the electrode, thus forming silicon-rich paths within the dielectric layer and indicating vacancy change to be the main mechanism in the resistive switching.

Experimental observation of electrochemical rate limitations affecting sodium ion-electron recombination at electrodes of the alkali metal thermoelectric converter at T about 1200 K

Science.gov (United States)

Williams, R. M.; Jeffries-Nakamura, B.; Loveland, M. E.; Underwood, M. L.; Bankston, C. P.

1988-01-01

This paper considers a model of the internal impedances of thin porous Mo and W alkali metal thermoelectric converter (AMTEC), in which the kinetic parameters associated with the reaction of the beta-double-prime alumina solid electrolite (BASE)/porous metal/gas three-phase boundary can be evaluated. Impedance data in the frequency range 0.01-100,000 Hz were collected over a range of AMTEC cell operating voltages for small-area thin porous Mo and W electrodes, yielding apparent charge transfer resistances at a series of cell potentials/currents. The ohmic resistance in the AMTEC cell could be broken down and characterized with three parameters: the BASE ionic resistance, the electrode film sheet resistance, and the contact/lead resistance, all of which could be calculated or measured independently and used to calculate power curves in good agreement with observed power curves. It is shown that these calculations can be used to predict the properties of electrodes with optimized parameters or to detect enhanced transport modes.

Optical and electrical properties of thermally evaporated In49Se48Sn3 films

International Nuclear Information System (INIS)

Salem, A.M.; El-Gendy, Y.A.; El-Sayad, E.A.

2009-01-01

Nearly stoichiometric thin films of In 49 Se 48 Sn 3 were deposited at room temperature, by conventional thermal evaporation of the presynthesized materials, onto precleaned glass substrates. The microstructural studies on the as-deposited and annealed films, using transmission electron microscopy and diffraction (TEMD), revealed that the as-deposited films are amorphous in nature, while those annealed at 498 K are crystalline. The optical properties of the investigated films were determined from the transmittance and reflectance data, in the spectral range 650-2500 nm. An analysis of the optical absorption spectra revealed a non-direct energy gap characterizing the amorphous films, while both allowed and forbidden direct energy gaps characterized the crystalline films. The electrical resistance of the deposited films was carried out during heating and cooling cycles in the temperature range 300-600 K. The results show an irreproducible behavior, while after crystallization the results become reproducible. The analysis of the temperature dependence of the resistance (ln(R) vs. 1000/T) for crystalline films shows two straight lines corresponding to both extrinsic and intrinsic conduction. The room temperature I-V characteristics of the as-deposited films sandwiched between similar Ag metal electrodes shows an ohmic behavior, while non-ohmic behavior attributed to space charge limited conduction has been observed when the films are sandwiched between dissimilar Ag/Al metal electrodes.

Enhanced water desalination efficiency in an air-cathode stacked microbial electrodeionization cell (SMEDIC)

KAUST Repository

Chehab, Noura A.

2014-11-01

A microbial desalination cell was developed that contained a stack of membranes packed with ion exchange resins between the membranes to reduce ohmic resistances and improve performance. This new configuration, called a stacked microbial electro-deionization cell (SMEDIC), was compared to a control reactor (SMDC) lacking the resins. The SMEDIC+S reactors contained both a spacer and 1.4±0.2. mL of ion exchange resin (IER) per membrane channel, while the spacer was omitted in the SMEDIC-S reactors and so a larger volume of resin (2.4±0.2. mL) was used. The overall extent of desalination using the SMEDIC with a moderate (brackish water) salt concentration (13. g/L) was 90-94%, compared to only 60% for the SMDC after 7 fed-batch cycles of the anode. At a higher (seawater) salt concentration of 35. g/L, the extent of desalination reached 61-72% (after 10 cycles) for the SMEDIC, compared to 43% for the SMDC. The improved performance was shown to be due to the reduction in ohmic resistances, which were 130. Ω (SMEDIC-S) and 180. Ω (SMEDIC+S) at the high salt concentration, compared to 210. Ω without resin (SMDC). These results show that IERs can improve performance of stacked membranes for both moderate and high initial salt concentrations. © 2014 Elsevier B.V.

Induced resistance: an enhancement of basal resistance?

NARCIS (Netherlands)

Vos, M. de; Robben, C.; Pelt, J.A. van; Loon, L.C. van; Pieterse, C.M.J.

2002-01-01

Upon primary pathogen attack, plants activate resistance mechanisms at the site of infection. Besides this so-called basal resistance, plants have also the ability to enhance their defensive capacity against future pathogen attack. There are at least two types of biologically induced resistance.

HIV resistance testing and detected drug resistance in Europe

DEFF Research Database (Denmark)

Schultze, Anna; Phillips, Andrew N; Paredes, Roger

2015-01-01

to Southern Europe. CONCLUSIONS: Despite a concurrent decline in virological failure and testing, drug resistance was commonly detected. This suggests a selective approach to resistance testing. The regional differences identified indicate that policy aiming to minimize the emergence of resistance......OBJECTIVES: To describe regional differences and trends in resistance testing among individuals experiencing virological failure and the prevalence of detected resistance among those individuals who had a genotypic resistance test done following virological failure. DESIGN: Multinational cohort...... study. METHODS: Individuals in EuroSIDA with virological failure (>1 RNA measurement >500 on ART after >6 months on ART) after 1997 were included. Adjusted odds ratios (aORs) for resistance testing following virological failure and aORs for the detection of resistance among those who had a test were...

Frequency response of electrochemical cells

Science.gov (United States)

Thomas, Daniel L.

1990-01-01

The main objective was to examine the feasibility of using frequency response techniques (1) as a tool in destructive physical analysis of batteries, particularly for estimating electrode structural parameters such as specific area, porosity, and tortuosity and (2) as a non-destructive testing technique for obtaining information such as state of charge and acceptability for space flight. The phenomena that contribute to the frequency response of an electrode include: (1) double layer capacitance; (2) Faradaic reaction resistance; (3) mass transfer of Warburg impedance; and (4) ohmic solution resistance. Nickel cadmium cells were investigated in solutions of KOH. A significant amount of data was acquired. Quantitative data analysis, using the developed software, is planned for the future.

Self-organizing magnetohydrodynamic plasma

International Nuclear Information System (INIS)

Sato, T.; Horiuchi, R.; Watanabe, K.; Hayashi, T.; Kusano, K.

1990-09-01

In a resistive magnetohydrodynamic (MHD) plasma, both the magnetic energy and the magnetic helicity dissipate with the resistive time scale. When sufficiently large free magnetic energy does exist, however, an ideal current driven instability is excited whereby magnetic reconnection is driven at a converging point of induced plasma flows which does exist in a bounded compressible plasma. At a reconnection point excess free energy (entropy) is rapidly dissipated by ohmic heating and lost by radiation, while magnetic helicity is completely conserved. The magnetic topology is largely changed by reconnection and a new ordered structure with the same helicity is created. It is discussed that magnetic reconnection plays a key role in the MHD self-organization process. (author)

Decoherence patterns of topological qubits from Majorana modes

International Nuclear Information System (INIS)

Ho, Shih-Hao; Chao, Sung-Po; Chou, Chung-Hsien; Lin, Feng-Li

2014-01-01

We investigate the decoherence patterns of topological qubits in contact with the environment using a novel way of deriving the open system dynamics, rather than using the Feynman–Vernon approach. Each topological qubit is made up of two Majorana modes of a 1D Kitaev chain. These two Majorana modes interact with the environment in an incoherent way which yields peculiar decoherence patterns of the topological qubit. More specifically, we consider the open system dynamics of topological qubits which are weakly coupled to fermionic/bosonic Ohmic-like environments. We find atypical patterns of quantum decoherence. In contrast to the case for non-topological qubits—which always decohere completely in all Ohmic-like environments—topological qubits decohere completely in Ohmic and sub-Ohmic environments but not in super-Ohmic ones. Moreover, we find that the fermion parities of the topological qubits, though they cannot prevent the qubit states from exhibiting decoherence in sub-Ohmic environments, can prevent thermalization turning the state into a Gibbs state. We also study the cases in which each Majorana mode can couple to different Ohmic-like environments, and the time dependence of concurrence for two topological qubits. (paper)

Inheritance of Cry1F resistance, cross-resistance and frequency of resistant alleles in Spodoptera frugiperda (Lepidoptera: Noctuidae).

Science.gov (United States)

Vélez, A M; Spencer, T A; Alves, A P; Moellenbeck, D; Meagher, R L; Chirakkal, H; Siegfried, B D

2013-12-01

Transgenic maize, Zea maize L., expressing the Cry1F protein from Bacillus thuringiensis has been registered for Spodoptera frugiperda (J. E. Smith) control since 2003. Unexpected damage to Cry1F maize was reported in 2006 in Puerto Rico and Cry1F resistance in S. frugiperda was documented. The inheritance of Cry1F resistance was characterized in a S. frugiperda resistant strain originating from Puerto Rico, which displayed >289-fold resistance to purified Cry1F. Concentration-response bioassays of reciprocal crosses of resistant and susceptible parental populations indicated that resistance is recessive and autosomal. Bioassays of the backcross of the F1 generation crossed with the resistant parental strain suggest that a single locus is responsible for resistance. In addition, cross-resistance to Cry1Aa, Cry1Ab, Cry1Ac, Cry1Ba, Cry2Aa and Vip3Aa was assessed in the Cry1F-resistant strain. There was no significant cross-resistance to Cry1Aa, Cry1Ba and Cry2Aa, although only limited effects were observed in the susceptible strain. Vip3Aa was highly effective against susceptible and resistant insects indicating no cross-resistance with Cry1F. In contrast, low levels of cross-resistance were observed for both Cry1Ab and Cry1Ac. Because the resistance is recessive and conferred by a single locus, an F1 screening assay was used to measure the frequency of Cry1F-resistant alleles from populations of Florida and Texas in 2010 and 2011. A total frequency of resistant alleles of 0.13 and 0.02 was found for Florida and Texas populations, respectively, indicating resistant alleles could be found in US populations, although there have been no reports of reduced efficacy of Cry1F-expressing plants.

High-efficiency photovoltaic cells

Science.gov (United States)

Yang, H.T.; Zehr, S.W.

1982-06-21

High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

Study on in-situ electrochemical impedance spectroscopy measurement of anodic reaction in SO_2 depolarized electrolysis process

International Nuclear Information System (INIS)

Xue Lulu; Zhang Ping; Chen Songzhe; Wang Laijun

2014-01-01

SO_2 depolarized electrolysis (SDE) is the pivotal reaction in hybrid sulfur process, one of the most promising approaches for mass hydrogen production without CO_2 emission. The net result of hybrid sulfur process is to split water into hydrogen and oxygen at a relatively low voltage, which will dramatically decrease the energy consumption for the production of hydrogen. The potential loss of SDE process could be separated into four components, i.e. reversible cell potential, anode overpotential, cathode overpotential and ohmic loss. So far, it has been identified that the total cell potential for the SO_2 depolarized electrolyzer is dominantly controlled by sulfuric acid concentration of the anolyte and electrolysis temperature of the electrolysis process. In this work, an in-situ Electrochemical Impedance Spectroscopy (EIS) measurement of the anodic SDE reaction was conducted. Results show that anodic overpotential is mainly resulted from the SO_2 oxidation reaction other than ohmic resistance or mass transfer limitation. This study extends the understanding to SDE process and gives suggestions for the further improvement of the SDE performance. (author)

Adriamycin resistance, heat resistance and radiation response in Chinese hamster fibroblasts

International Nuclear Information System (INIS)

Wallner, K.; Li, G.

1985-01-01

Previous investigators have demonstrated synergistic interaction between hyperthermia and radiation or Adriamycin (ADR), using cell lines that are sensitive to heat or ADR alone. The authors investigated the effect of heat, radiation or ADR on Chinese hamster fibroblasts (HA-1), their heat resistant variants and their ADR resistant variants. Heat for ADR resistance did not confer cross resistance to radiation. Cells resistant to heat did show cross resistance to ADR. While cells selected for ADR resistance were not cross resistant to heat, they did not exhibit drug potentiation by hyperthermia, characteristic of ADR sensitive cells. Cytofluorometric measurement showed decreased ADR uptake in both heat and ADR resistant cells. The possibility of cross resistance between heat and ADR should be considered when designing combined modality trials

Outwitting the series resistance in scanning spreading resistance microscopy

International Nuclear Information System (INIS)

Schulze, A.; Cao, R.; Eyben, P.; Hantschel, T.; Vandervorst, W.

2016-01-01

The performance of nanoelectronics devices critically depends on the distribution of active dopants inside these structures. For this reason, dopant profiling has been defined as one of the major metrology challenges by the international technology roadmap of semiconductors. Scanning spreading resistance microscopy (SSRM) has evolved as one of the most viable approaches over the last decade due to its excellent spatial resolution, sensitivity and quantification accuracy. However, in case of advanced device architectures like fins and nanowires a proper measurement of the spreading resistance is often hampered by the increasing impact of parasitic series resistances (e.g. bulk series resistance) arising from the confined nature of the aforementioned structures. In order to overcome this limitation we report in this paper the development and implementation of a novel SSRM mode (fast Fourier transform-SSRM: FFT-SSRM) which essentially decouples the spreading resistance from parasitic series resistance components. We show that this can be achieved by a force modulation (leading to a modulated spreading resistance signal) in combination with a lock-in deconvolution concept. In this paper we first introduce the principle of operation of the technique. We discuss in detail the underlying physical mechanisms as well as the technical implementation on a state-of-the-art atomic force microscope (AFM). We demonstrate the performance of FFT-SSRM and its ability to remove substantial series resistance components in practice. Eventually, the possibility of decoupling the spreading resistance from the intrinsic probe resistance will be demonstrated and discussed. - Highlights: • A novel electrical AFM mode for carrier profiling in confined volumes is presented. • Thereby the force and hence the contact area between AFM probe and sample is modulated. • Information on the spreading resistance is derived using a lock-in approach. • Bulk series resistance components are

Novel resistance functions uncovered using functional metagenomic investigations of resistance reservoirs

Directory of Open Access Journals (Sweden)

Erica C. Pehrsson

2013-06-01

Full Text Available Rates of infection with antibiotic-resistant bacteria have increased precipitously over the past several decades, with far-reaching healthcare and societal costs. Recent evidence has established a link between antibiotic resistance genes in human pathogens and those found in non-pathogenic, commensal, and environmental organisms, prompting deeper investigation of natural and human-associated reservoirs of antibiotic resistance. Functional metagenomic selections, in which shotgun-cloned DNA fragments are selected for their ability to confer survival to an indicator host, have been increasingly applied to the characterization of many antibiotic resistance reservoirs. These experiments have demonstrated that antibiotic resistance genes are highly diverse and widely distributed, many times bearing little to no similarity to known sequences. Through unbiased selections for survival to antibiotic exposure, functional metagenomics can improve annotations by reducing the discovery of false-positive resistance and by allowing for the identification of previously unrecognizable resistance genes. In this review, we summarize the novel resistance functions uncovered using functional metagenomic investigations of natural and human-impacted resistance reservoirs. Examples of novel antibiotic resistance genes include those highly divergent from known sequences, those for which sequence is entirely unable to predict resistance function, bifunctional resistance genes, and those with unconventional, atypical resistance mechanisms. Overcoming antibiotic resistance in the clinic will require a better understanding of existing resistance reservoirs and the dissemination networks that govern horizontal gene exchange, informing best practices to limit the spread of resistance-conferring genes to human pathogens.

A study on heat resistance of high temperature resistant coating

Energy Technology Data Exchange (ETDEWEB)

Zhang, Liping; Wang, Xueying; Zhang, Qibin; Qin, Yanlong; Lin, Zhu [Research Institute of Engineering Technology of CNPC, Tianjin (China)

2005-04-15

A high temperature resistant coating has been developed, which is mainly for heavy oil production pipes deserved the serious corrosion. The coating has excellent physical and mechanical performance and corrosion resistance at room and high temperature. In order to simulate the underground working condition of heavy oil pipes,the heat resistance of the high temperature resistant coating has been studied. The development and a study on the heat resistance of the DHT high temperature resistance coating have been introduced in this paper

A study on heat resistance of high temperature resistant coating

International Nuclear Information System (INIS)

Zhang, Liping; Wang, Xueying; Zhang, Qibin; Qin, Yanlong; Lin, Zhu

2005-01-01

A high temperature resistant coating has been developed, which is mainly for heavy oil production pipes deserved the serious corrosion. The coating has excellent physical and mechanical performance and corrosion resistance at room and high temperature. In order to simulate the underground working condition of heavy oil pipes,the heat resistance of the high temperature resistant coating has been studied. The development and a study on the heat resistance of the DHT high temperature resistance coating have been introduced in this paper

Detection of resistance, cross-resistance, and stability of resistance to new chemistry insecticides in Bemisia tabaci (Homoptera: Aleyrodidae).

Science.gov (United States)

Basit, Muhammad; Saeed, Shafqat; Saleem, Mushtaq Ahmad; Denholm, Ian; Shah, Maqbool

2013-06-01

Resistance levels in whitefly, Bemisia tabaci (Gennadius) collections from cotton and sunflower (up to four districts) for five neonicotinoids and two insect growth regulators (IGRs) were investigated for two consecutive years. Based on the LC50(s), all collections showed slight to moderate levels of resistance for the tested insecticides compared with the laboratory susceptible population. The data also indicated that cotton and sunflower collections had similar resistance levels. In comparison (four collections), Vehari collections showed higher resistance for acetamiprid, thiacloprid, and nitenpyram compared with those of others. Average resistance ratios for acetamiprid, thiacloprid, and nitenpyram ranged from 5- to 13-, 4- to 8-, and 9- to 13-fold, respectively. Multan and Vehari collections also exhibited moderate levels (9- to 16-fold) of resistance to buprofezin. Furthermore, toxicity of neonicotinoids against immature stages was equal to that of insect growth regulators. The data also suggested that resistance in the field populations was stable. After selection for four generations with bifenthrin (G1 to G4), resistance to bifenthrin increased to 14-fold compared with the laboratory susceptible population. Selection also increased resistance to fenpropathrin, lambdacyhalothrin, imidacloprid, acetamiprid, and diafenthuron. Cross-resistance and stability of resistance in the field populations is of some concern. Rotation of insecticides having no cross-resistance and targeting the control against immature stages may control the resistant insects, simultaneously reducing the selection pressure imposed.

Resistant plasmid profile analysis of multidrug resistant Escherichia ...

African Journals Online (AJOL)

Background: Multi-drug resistant Escherichia coli has become a major threat and cause of many urinary tract infections (UTIs) in Abeokuta, Nigeria. Objectives: This study was carried out to determine the resistant plasmids of multidrug resistant Escherichia coli isolated from (Urinary tract infections)UTIs in Abeokuta.

Linear waves in two-fluid relativistic gasdynamics

International Nuclear Information System (INIS)

Gavrikov, M.B.; Solov'ev, L.S.

1988-01-01

This paper is devoted to the development of a theory of waves propagating in a two-component gaseous medium. In all cases considered the authors use only the method of two-fluid relativistic electromagnetic gasdynamics in the framework of the special relativity theory. They pay special attention to the problem of the interaction in a mixture of both neutral and charged gases when they move relative to one another. This interaction is for charged gases responsible for the appearance of ohmic resistance to an electrical current

Orbiter fuel cell improvement assessment

International Nuclear Information System (INIS)

Johnson, R.E.

1981-08-01

The history of fuel cells and the theory of fuel cells is given. Expressions for thermodynamic and electrical efficiencies are developed. The voltage losses due to electrode activation, ohmic resistance and ionic diffusion are discussed. Present limitations of the Orbiter Fuel Cell, as well as proposed enhancements, are given. These enhancements are then evaluated and recommendations are given for fuel cell enhancement both for short-range as well as long-range performance improvement. Estimates of reliability and cost savings are given for enhancements where possible

Coupling structure calculations for ion cyclotron heating of Tore Supra

International Nuclear Information System (INIS)

Bannelier, P.

1986-12-01

Two structures are studied: antennas and waveguides. After some recalls on transmission lines with losses, the theory is applied to antennas with inner adaptation: the problem is to calculate the impedance necessary for complete adaptation of antenna to the power line and the generator. The Faraday screen role is detailed and studied: the per-unit length loss resistance due to ohmic losses in the screen which lower the plasma-coupled maximum power. Waveguide coupling theory is also presented. Coupling between wave guide and plasma is evaluated [fr

Effect of Lanthanum-Strontium Cathode Current-Collecting Layer on the Performance of Anode Supported Type Planar Solid Oxide Fuel Cells

Science.gov (United States)

Park, Sun-Young; Ji, Ho-Il; Kim, Hae-Ryoung; Yoon, Kyung Joong; Son, Ji-Won; Lee, Hae-Weon; Lee, Jong-Ho

2013-07-01

We applied screen-printed (La,Sr)CoO3 as a current-collecting layer of planar type unit-cell for lower temperature operation of SOFCs. In this study the effects of the cathode current-collecting layer on the performance of unit cell and symmetric half cell were investigated via AC and DC polarization experiments. According to our investigation, appropriately controlled current collecting layer was very effective to enhance the unit cell performance by reducing not only the ohmic resistance but also the polarization losses of SOFC cathode.

Global confinement characteristics of Jet limiter plasmas

International Nuclear Information System (INIS)

Campbell, D.J.; Christiansen, J.P.; Cordey, J.G.; Thomas, P.R.; Thomsen, K.

1989-01-01

Data from a wide variety of plasma pulses on JET (aux. heating, current, field, minority species, plasma shape, etc) are analysed in order to assess the characteristics of global confinement. The scaling of confinement in ohmically and auxiliary heated discharges is examined. The ohmic confinement in the present new JET configuration (Belt Limiter) is essentially the same as previously. Confinement in auxiliary heated discharges shows presently a slight improvement since 1986. Both ohmic and non-ohmic data is used in a set of confinement time regression analyses and certain constraints derived from theory are imposed

Current scaling of plasma focus devices

International Nuclear Information System (INIS)

Schiuma, C.; Herold, H.; Kaeppeler, H.J.; Shakhatre, M.; Auluck, S.K.H.

1990-03-01

In continuation of the work by G. Decker et al. on current and neutron yield scaling of plasma focus devices an analytical solution for the circuit equation (with resistance R = 0) in the compression phase was derived. Together with the solution for the rundown phase from G. Decker et al, which was extended for finite resistance (R ≠ 0), there follows an analytical scaling theory for maximum and pinch currents. At the same time there exists the possibility to discuss the influence of finite resistance on current variation and scaling parameters. The model solutions were checked out by numerical integrations of the current equation. While at the beginning of the rundown phase the ohmic resistance cannot be neglected (the magnitude R/L plays an important role), its influence at the end of the rundown phase and in the compression phase is negligible. The theoretically determined values are compared with the results of numerous probe measurements. (orig.)

Resistant plasmid profile analysis of multidrug resistant Escherichia ...

African Journals Online (AJOL)

Multiple drug resistance isolates causing UTI has seri- ous implications for the empiric therapy against patho- genic isolates and for the possible co-selection of antimicrobial resistant mediated by multi drug resistant plasmids21,22. E. coli from clinical isolates are known to harbour plasmids of different molecular sizes23.

Resistance to Linezolid

DEFF Research Database (Denmark)

Vester, Birte; Ntokou, Eleni

2017-01-01

Linezolid is an antimicrobial agent that binds to the bacterial ribosome and thereby inhibits protein synthesis. Soon after its release as a clinical drug, it became clear that bacteria could become resistant to linezolid. The resistance mechanisms are mainly causing alteration of the drug target...... site, but probably efflux might also play a role. The resistance is still rare in surveillance studies, but outbreaks of resistant clones from hospitals have been observed. So far the main mechanisms of resistance are occurrence of mutations in ribosomal genes or obtaining plasmids with a gene coding...... for a methyltransferase providing resistance. The most obvious way to avoid resistance may be development of derivatives of linezolid overcoming the known resistance mechanisms....

Low-level quinolone-resistance in multi-drug resistant typhoid

Energy Technology Data Exchange (ETDEWEB)

Mirza, S H; Khan, M A [Armed Forces Inst. of Pathology, Rawalpindi (Pakistan). Dept. of Microbiolgy

2008-01-15

To find out the frequency of low-level quinolone-resistance in Multi-Drug Resistant (MDR) typhoid using nalidixic acid screening disc. Blood was obtained from suspected cases of typhoid fever and cultured in to BacT/ALERT. The positive blood cultures bottles were subcultured. The isolates were identified by colony morphology and biochemical tests using API-20E galleries. Susceptibility testing of isolates was done by modified Kirby-Bauer disc diffusion method on Muellar Hinton Agar. For the isolates, which were resistant to nalidixic acid by disc diffusion method, Minimal Inhibitory Concentrations (MICs) of ciprofloxacin and nalidixic acid were determined by using the E-test strips. Disc diffusion susceptibility tests and MICs were interpreted according to the guidelines provided by National Committee for Control Laboratory Standard (NCCLS). A total of 21(65.5%) out of 32 isolates of Salmonellae were nalidixic acid-resistant by disk diffusion method. All the nalidixic acid-resistant isolates by disc diffusion method were confirmed by MICs for both ciprofloxacin and nalidixic acid. All the nalidixic acid-resistant isolates had a ciprofloxacin MIC of 0.25-1 microg/ml (reduced susceptibility) and nalidixic acid MICs > 32 microg (resistant). Out of all Salmonella isolates, 24 (75%) were found to be MDR, and all were S. typbi. Low-level quinolone-resistance in typhoid was high in this small series. Screening for nalidixic acid resistance with a 30 microg nalidixic acid disk is a reliable and cost-effective method to detect low-level fluoroquinolone resistance, especially in the developing countries. (author)

Low-level quinolone-resistance in multi-drug resistant typhoid

International Nuclear Information System (INIS)

Mirza, S.H.; Khan, M.A.

2008-01-01

To find out the frequency of low-level quinolone-resistance in Multi-Drug Resistant (MDR) typhoid using nalidixic acid screening disc. Blood was obtained from suspected cases of typhoid fever and cultured in to BacT/ALERT. The positive blood cultures bottles were subcultured. The isolates were identified by colony morphology and biochemical tests using API-20E galleries. Susceptibility testing of isolates was done by modified Kirby-Bauer disc diffusion method on Muellar Hinton Agar. For the isolates, which were resistant to nalidixic acid by disc diffusion method, Minimal Inhibitory Concentrations (MICs) of ciprofloxacin and nalidixic acid were determined by using the E-test strips. Disc diffusion susceptibility tests and MICs were interpreted according to the guidelines provided by National Committee for Control Laboratory Standard (NCCLS). A total of 21(65.5%) out of 32 isolates of Salmonellae were nalidixic acid-resistant by disk diffusion method. All the nalidixic acid-resistant isolates by disc diffusion method were confirmed by MICs for both ciprofloxacin and nalidixic acid. All the nalidixic acid-resistant isolates had a ciprofloxacin MIC of 0.25-1 microg/ml (reduced susceptibility) and nalidixic acid MICs > 32 microg (resistant). Out of all Salmonella isolates, 24 (75%) were found to be MDR, and all were S. typbi. Low-level quinolone-resistance in typhoid was high in this small series. Screening for nalidixic acid resistance with a 30 microg nalidixic acid disk is a reliable and cost-effective method to detect low-level fluoroquinolone resistance, especially in the developing countries. (author)

Antibiotic resistance

Directory of Open Access Journals (Sweden)

Marianne Frieri

2017-07-01

Full Text Available Summary: Antimicrobial resistance in bacterial pathogens is a challenge that is associated with high morbidity and mortality. Multidrug resistance patterns in Gram-positive and -negative bacteria are difficult to treat and may even be untreatable with conventional antibiotics. There is currently a shortage of effective therapies, lack of successful prevention measures, and only a few new antibiotics, which require development of novel treatment options and alternative antimicrobial therapies. Biofilms are involved in multidrug resistance and can present challenges for infection control. Virulence, Staphylococcus aureus, Clostridium difficile infection, vancomycin-resistant enterococci, and control in the Emergency Department are also discussed. Keywords: Antibiotic resistance, Biofilms, Infections, Public health, Emergency Department

Insecticide resistance and resistance mechanisms in bed bugs, Cimex spp. (Hemiptera: Cimicidae).

Science.gov (United States)

Dang, Kai; Doggett, Stephen L; Veera Singham, G; Lee, Chow-Yang

2017-06-29

The worldwide resurgence of bed bugs [both Cimex lectularius L. and Cimex hemipterus (F.)] over the past two decades is believed in large part to be due to the development of insecticide resistance. The transcriptomic and genomic studies since 2010, as well as morphological, biochemical and behavioral studies, have helped insecticide resistance research on bed bugs. Multiple resistance mechanisms, including penetration resistance through thickening or remodelling of the cuticle, metabolic resistance by increased activities of detoxification enzymes (e.g. cytochrome P450 monooxygenases and esterases), and knockdown resistance by kdr mutations, have been experimentally identified as conferring insecticide resistance in bed bugs. Other candidate resistance mechanisms, including behavioral resistance, some types of physiological resistance (e.g. increasing activities of esterases by point mutations, glutathione S-transferase, target site insensitivity including altered AChEs, GABA receptor insensitivity and altered nAChRs), symbiont-mediated resistance and other potential, yet undiscovered mechanisms may exist. This article reviews recent studies of resistance mechanisms and the genes governing insecticide resistance, potential candidate resistance mechanisms, and methods of monitoring insecticide resistance in bed bugs. This article provides an insight into the knowledge essential for the development of both insecticide resistance management (IRM) and integrated pest management (IPM) strategies for successful bed bug management.

Glyphosate-Resistant Parthenium hysterophorus in the Caribbean Islands: Non Target Site Resistance and Target Site Resistance in Relation to Resistance Levels.

Directory of Open Access Journals (Sweden)

Enzo Bracamonte

2016-12-01

Full Text Available Glyphosate has been the most intensely herbicide used worldwide for decades, and continues to be a single tool for controlling weeds in woody crops. However, the adoption of this herbicide in a wide range of culture systems has led to the emergence of resistant weeds. Glyphosate has been widely used primarily on citrus in the Caribbean area, but a study of resistance in the Caribbean islands of Cuba and the Dominican Republic has never been carried out. Unfortunately, Parthenium hysterophorus has developed glyphosate-resistance in both islands, independently. The resistance level and mechanisms of different P. hysterophorus accessions (three collected in Cuba (Cu-R and four collected in the Dominican Republic (Do-R have been studied under greenhouse and laboratory conditions. In in vivo assays (glyphosate dose causing 50% reduction in above-ground vegetative biomass and survival, the resistance factor levels showed susceptible accessions (Cu-S≥Do-S, low-resistance accessions (Cu-R3Do-R2>Cu-R2>Do-R3>Do-R4>Cu-R3>>Cu-S≥Do-S. Glyphosate was degraded to aminomethylphosphonic acid, glyoxylate and sarcosine by >88% in resistant accessions except in Cu-R3 and Do-R4 resistant accessions (51.12 and 44.21, respectively, whereas a little glyphosate (<9.32% was degraded in both susceptible accessions at 96 h after treatment. There were significant differences between P. hysterophorus accessions in the 5-enolpyruvylshikimate-3-phosphate synthase (EPSPS activity enzyme with and without different glyphosate rates. The R accessions showed values of between 0.026 and 0.21 µmol µg-1 TSP protein min-1 basal EPSPS activity values with respect to the S (0.024 and 0.025 accessions. The same trend was found in the EPSPS enzyme activity treated with glyphosate, where a higher enzyme activity inhibition (glyphosate µM corresponded to greater resistance levels in P. hysterophorus accessions. One amino acid substitution was found at position 106 in EPSPS, consisting

Equivalent network for resistance and temperature coefficient of resistance versus temperature and composition of thick resistive films

International Nuclear Information System (INIS)

Kusy, A.

1987-01-01

Two types of elementary resistances in thick resistive films have been considered: (i) constriction resistance R/sub C/ determined by the bulk properties of conducting material and by the geometry of constriction, and (ii) barrier resistance R/sub B/ determined by the parameters of a thermally activated type of tunneling process and by the geometry of the metal-insulator-metal unit. On this basis a resistance network composed of a large number of the two types of resistances has been defined. The network has been considered as being equivalent to thick resistive film (TRF) from the point of view of the resistance and temperature coefficient of resistance (TCR). The parameters of this network have been evaluated by the computer-aided approximation of the experimental data found for RuO 2 -based TRFs. On the basis of the equations derived for the network as well as the results of the approximation process, it can be concluded that the small values of the network TCR result from the superposition of the TCR of the conducting component β/sub C/ and of the temperature coefficient of barrier resistance α/sub B/. In this superposition β/sub C/ is attenuated (by 1--2 orders of magnitude), while α/sub B/ is attenuated by only few percentages. The network has been found to be strongly barrier dominated

Reconceptualizing resistance: sociology and the affective dimension of resistance.

Science.gov (United States)

Hynes, Maria

2013-12-01

This paper re-examines the sociological study of resistance in light of growing interest in the concept of affect. Recent claims that we are witness to an 'affective turn' and calls for a 'new sociological empiricism' sensitive to affect indicate an emerging paradigm shift in sociology. Yet, mainstream sociological study of resistance tends to have been largely unaffected by this shift. To this end, this paper presents a case for the significance of affect as a lens by which to approach the study of resistance. My claim is not simply that the forms of actions we would normally recognize as resistance have an affective dimension. Rather, it is that the theory of affect broadens 'resistance' beyond the purview of the two dominant modes of analysis in sociology; namely, the study of macropolitical forms, on the one hand, and the micropolitics of everyday resistance on the other. This broadened perspective challenges the persistent assumption that ideological forms of power and resistance are the most pertinent to the contemporary world, suggesting that much power and resistance today is of a more affective nature. In making this argument, it is a Deleuzian reading of affect that is pursued, which opens up to a level of analysis beyond the common understanding of affect as emotion. I argue that an affective approach to resistance would pay attention to those barely perceptible transitions in power and mobilizations of bodily potential that operate below the conscious perceptions and subjective emotions of social actors. These affective transitions constitute a new site at which both power and resistance operate. © London School of Economics and Political Science 2013.

Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

Directory of Open Access Journals (Sweden)

Vishnu Gopal

2015-09-01

Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

Energy Technology Data Exchange (ETDEWEB)

Cavallari, Nicholas, E-mail: nicholas.cavallari@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy); Pattini, Francesco; Rampino, Stefano; Annoni, Filippo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Barozzi, Mario [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Maragliano, Carlo [Solar Bankers LLC, Phoenix, AZ (United States); Mazzer, Massimo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Pepponi, Giancarlo [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Spaggiari, Giulia; Fornari, Roberto [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy)

2017-08-01

Highlights: • AZO and CIGS were deposited by Low-Temperature Pulsed Electron Deposition (LT-PED). • CIGS/AZO contacts with ohmic behavior and resistance of 1.07 Ω cm{sup 2} were fabricated. • LT-PED deposition of AZO and CIGS prevents formation of Ga{sub 2}O{sub 3} interlayer. • CIGS-based bifacial solar cells with AZO back contact were realized. • Front PV efficiency of 9.3% and equivalent bifacial efficiency of 11.6% were achieved. - Abstract: We report on the fabrication and characterization of Cu(In,Ga)Se{sub 2} (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga{sub 2}O{sub 3} at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.

Review of resistance factor for steel: resistance distributions and resistance factor calibration

International Nuclear Information System (INIS)

Schmidt, B.J.; Bartlett, F.M.

2002-01-01

Changes in the Canadian steel industry warrant a review of the steel resistance factor in CSA Standard S16 (formerly S16.1) 'Limit states design of steel structures', originally calibrated in the landmark study by Kennedy and Gad Aly in 1980. This paper presents statistical parameters for the bending, compression, and tension resistances of W, WWF, and HSS components produced since 1999 that have been derived from geometric and material properties presented in a companion paper. The resistance factor for steel was recalibrated for the live and dead load combination in the 1995 National Building Code of Canada. A resistance factor of 0.95 is suitable for laterally supported beams, stocky columns, and tension members failing by yield of the gross section, whereas the current value of 0.90 is appropriate for intermediate columns and tension members failing by fracture of the net section. (author)

Electrical resistivity measurements to predict abrasion resistance

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science; Volume 31; Issue 2. Electrical resistivity measurements to predict abrasion resistance of rock aggregates ... It was seen that correlation coefficients were increased for the rock classes. In addition ...