WorldWideScience

Sample records for ohmic resistance

  1. Peltier-Effect-Induced Correction to Ohmic Resistance

    Science.gov (United States)

    Cheremisin, M. V.

    2001-02-01

    The standard ohmic measurements by means of two extra leads contain an additional thermal correction to resistance. The current results in heating(cooling) at first(second) sample contact due to Peltier effect. The contacts temperatures are different. The measured voltage is the sum of the ohmic voltage swing and Peltier effect induced thermopower which is linear on current. As a result, the thermal correction to resistance measured exists at $I\\to 0$. The correction should be in comparison with ohmic resistance. Above some critical frequency dependent on thermal inertial effects the thermal correction disappears.

  2. Edge effect in ohmic contacts on high-resistivity semiconductors

    Science.gov (United States)

    Ruzin, Arie

    2016-01-01

    Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors.

  3. Edge effect in ohmic contacts on high-resistivity semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Ruzin, Arie

    2016-01-11

    Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors. - Highlights: • Ohmic contacts were modeled on semi-intrinsic and compensated semiconductors. • Edge-effect increases the contact current by a factor of ~2 for intermediate size contacts. • In larger and smaller contacts the current increase is smaller. • In smaller contacts the E-field edge-peak decreases. • With velocity saturation the current increase is less pronounced.

  4. Low Resistance Ohmic Contact for ZnSb Thin Film

    Science.gov (United States)

    Yin, Meimei; Zhong, Aihua; Luo, Jingting; Li, Fu; Zheng, Zhuanghao; Fan, Ping

    2016-12-01

    To further improve the performance and power density of thermoelectric devices, the size of the device needs to be scaled down from macroscale to microscale. Different from the macroscale device, the specific contact resistivity ρ c of the metal contact to the microscale device becomes a key point to the device's efficiency. In this study, a P type ZnSb thin film was deposited on glass substrate using a radio frequency magnetron sputtering system, followed by annealing at 325°C in an Ar atmosphere. X-ray diffraction, scanning electron microscopy, and the Hall measurement system were utilized for characterization of the ZnSb. The ohmic contact properties of metallic Co and Mo on the annealed ZnSb thin films were investigated, indicating that metallic Co has a lower specific contact resistivity ρ c to ZnSb. The effect of a diluted HCl-etch prior to Co electrode deposition was also studied. The results show that a HCl-etch is effective for the reduction of the ρ c. The dependence of ρ c on the annealing temperature was also studied. Through HCl-etch and annealing at 200°C, specific contact resistivity ρ c as low as 10-7 Ω cm2 is successfully obtained on the Co electrode, providing a good method to fabricate a highly efficient ZnSb-based micro device.

  5. Electrical test methods for on-line fuel cell ohmic resistance measurement

    Science.gov (United States)

    Cooper, K. R.; Smith, M.

    The principles and trade-offs of four electrical test methods suitable for on-line measurement of the ohmic resistance (R Ω) of fuel cells is presented: current interrupt, AC resistance, high frequency resistance (HFR), and electrochemical impedance spectroscopy (EIS). The internal resistance of a proton exchange membrane (PEM) fuel cell determined with the current interrupt, HFR and EIS techniques is compared. The influence of the AC amplitude and frequency of the HFR measurement on the observed ohmic resistance is examined, as is the ohmic resistance extracted from the EIS data by modeling the spectra with a transmission line model for porous electrodes. The ohmic resistance of a H 2/O 2 PEM fuel cell determined via the three methods was within 10-30% of each other. The current interrupt technique consistently produced measured cell resistances that exceeded those of the other two techniques. For the HFR technique, the frequency at which the measurement was conducted influenced the measured resistance (i.e., higher frequency providing smaller R Ω), whereas the AC amplitude did not effect the observed value. The difference in measured ohmic resistance between these techniques exceeds that reasonably accounted for by measurement error. The source of the discrepancy between current interrupt and impedance-based methods is attributed to the difference in the response of a non-uniformly polarized electrode, such as a porous electrode with non-negligible ohmic resistance, to a large perturbation (current interrupt event) as compared to a small perturbation (impedance measurement).

  6. Dependence of Ohmic Contact Resistance on Barrier Thickness of AlN/GaN HEMT Structures

    Science.gov (United States)

    2010-01-01

    thickness of AlN/ GaN HEMT structures 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER 5e. TASK NUMBER...Electronics journal homepage: www.elsevier .com/locate /sseLetter Dependence of ohmic contact resistance on barrier thickness of AlN/ GaN HEMT ...Available online x The review of this paper was arranged by Prof. E. Calleja Keywords: AlN GaN HEMT Ohmic contact Heterostructure0038-1101/$ - see

  7. New flange correction formula applied to interfacial resistance measurements of ohmic contacts to GaAs

    Science.gov (United States)

    Lieneweg, Udo; Hannaman, David J.

    1987-01-01

    A quasi-two-dimensional analytical model is developed to account for vertical and horizontal current flow in and adjacent to a square ohmic contact between a metal and a thin semiconducting strip which is wider than the contact. The model includes side taps to the contact area for voltage probing and relates the 'apparent' interfacial resistivity to the (true) interfacial resistivity, the sheet resistance of the semiconducting layer, the contact size, and the width of the 'flange' around the contact. This relation is checked against numerical simulations. With the help of the model, interfacial resistivities of ohmic contacts to GaAs were extracted and found independent of contact size in the range of 1.5-10 microns.

  8. Method of separate determination of high-ohmic sample resistance and contact resistance

    Directory of Open Access Journals (Sweden)

    Vadim A. Golubiatnikov

    2015-09-01

    Full Text Available A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT, etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed.

  9. Global simulations of protoplanetary disks with ohmic resistivity and ambipolar diffusion

    CERN Document Server

    Gressel, Oliver; Nelson, Richard P; McNally, Colin P

    2015-01-01

    Protoplanetary disks are believed to accrete onto their central T Tauri star because of magnetic stresses. Recently published shearing box simulations indicate that Ohmic resistivity, ambipolar diffusion and the Hall effect all play important roles in disk evolution. In the presence of a vertical magnetic field, the disk remains laminar between 1-5au, and a magnetocentrifugal disk wind forms that provides an important mechanism for removing angular momentum. Questions remain, however, about the establishment of a true physical wind solution in the shearing box simulations because of the symmetries inherent in the local approximation. We present global MHD simulations of protoplanetary disks that include Ohmic resistivity and ambipolar diffusion, where the time-dependent gas-phase electron and ion fractions are computed under FUV and X-ray ionization with a simplified recombination chemistry. Our results show that the disk remains laminar, and that a physical wind solution arises naturally in global disk model...

  10. Methylation effect on the ohmic resistance of a poly-GC DNA-like chain

    Energy Technology Data Exchange (ETDEWEB)

    Moura, F.A.B.F. de, E-mail: fidelis@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Lyra, M.L. [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Almeida, M.L. de; Ourique, G.S.; Fulco, U.L.; Albuquerque, E.L. [Departamento de Biofísica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil)

    2016-10-14

    We determine, by using a tight-binding model Hamiltonian, the characteristic current–voltage (IxV) curves of a 5-methylated cytosine single strand poly-GC DNA-like finite segment, considering the methyl groups attached laterally to a random fraction of the cytosine basis. Striking, we found that the methylation significantly impacts the ohmic resistance (R) of the DNA-like segments, indicating that measurements of R can be used as a biosensor tool to probe the presence of anomalous methylation. - Highlights: • Ohmic resistance of finite segments of poly-CG DNA-like segments. • Possibility for the development of biosensor devices. • Methylation effect and electronic transport in DNA-like segments.

  11. Effect of composition on the polarization and ohmic resistances of LSM/YSZ composite cathodes in solid oxide fuel cell

    Indian Academy of Sciences (India)

    B SHRI PRAKASH; S SENTHIL KUMAR; S T ARUNA

    2017-06-01

    La0.8Sr0.2MnO$_3$−$\\delta$ (LSM)/8 mol% yttria-stabilized ZrO$_2$ (YSZ) (LSM/YSZ) composite cathodes with varying composition are studied for both polarization and ohmic resistance by electrochemical impedance spectroscopy. It was found that total resistance and polarization resistance are lowest for the composite with 60 wt% of LSM (LSM60/YSZ40). However, the ohmic resistance was highest for the same composition and amounted to 60% of the total resistance value. Compositional dependence of resistances has been explained based on the variations of the triple phase boundaries and width of the O$_2$−ion migration path with the composition of the electrode. Based on the observed area specific ohmic resistance values for the composite cathodes, it is proposed to verify the advantages of LSM/YSZ over LSM cathode in anode-supported solidoxide fuel cell with thin electrolyte.

  12. Methylation effect on the ohmic resistance of a poly-GC DNA-like chain

    Science.gov (United States)

    de Moura, F. A. B. F.; Lyra, M. L.; de Almeida, M. L.; Ourique, G. S.; Fulco, U. L.; Albuquerque, E. L.

    2016-10-01

    We determine, by using a tight-binding model Hamiltonian, the characteristic current-voltage (IxV) curves of a 5-methylated cytosine single strand poly-GC DNA-like finite segment, considering the methyl groups attached laterally to a random fraction of the cytosine basis. Striking, we found that the methylation significantly impacts the ohmic resistance (R) of the DNA-like segments, indicating that measurements of R can be used as a biosensor tool to probe the presence of anomalous methylation.

  13. Temperature dependences of the contact resistivity in ohmic contacts to n{sup +}-InN

    Energy Technology Data Exchange (ETDEWEB)

    Sachenko, A. V.; Belyaev, A. E. [National Academy of Sciences, Lashkaryov Institute of Semiconductor Physics (Ukraine); Boltovets, N. S. [“Orion” Research Institute (Ukraine); Brunkov, P. N.; Jmerik, V. N.; Ivanov, S. V. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kapitanchuk, L. M. [National Academy of Sciences of Ukraine, Paton Electric Welding Institute (Ukraine); Konakova, R. V., E-mail: konakova@isp.kiev.ua; Klad’ko, V. P.; Romanets, P. N.; Saja, P. O.; Safryuk, N. V.; Sheremet, V. N. [National Academy of Sciences, Lashkaryov Institute of Semiconductor Physics (Ukraine)

    2015-04-15

    The temperature dependences of the contact resistivity (ρ{sub c}) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 10{sup 18} cm{sup −3} in the temperature range of 4.2–300 K. At temperatures T > 150 K, linearly increasing dependences ρ{sub c}(T) are obtained. The dependences are explained within the mechanism of thermionic current flow through metal shunts associated with dislocations. Good agreement between theoretical and experimental dependences is achieved assuming that the flowing current is limited by the total resistance of the metal shunts, and the density of conductive dislocations is ∼5 × 10{sup 9} cm{sup −2}. Using the X-ray diffraction method, the density of screw and edge dislocations in the structure under study is measured: their total density exceeds 10{sup 10} cm{sup −2}.

  14. Monitoring six-phase ohmic heating of contaminated soils using electrical resistance tomography

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez, A.L.; Daily, W.D.

    1994-09-01

    Electrical resistance tomography (ERT) was used to monitor six-phase ohmic heating used for the insitu remediation of volatile organic compounds from subsurface water and soil at the Savannah River Site, near Aiken, South Carolina. The changes in electrical conductivity caused by six-phase ohmic-heating in a clay layer located in the vadose zone were monitored during a period of approximately 2 months, before, during and after heating. From an array of electrodes located in 4 boreholes, we collected electrical resistivity data between five pairs of adjacent holes pairs. This data was used to calculate tomographs which showed the electrical conductivity changes along five vertical planes. The difference tomographs show the combined effects of moisture redistribution and heating caused by six-phase heating and vapor extraction. The tomographs show that most of the clay layer increased in electrical conductivity during the first 3 weeks of the 4 week long heating phase. At this time, the electrical conductivities near the center of the heating array were twice as large as the pre-heat conductivities. Then the electrical conductivity started to decrease for portions of the clay layer closest to the vapor extraction well. We propose that the conductivity decreases are due to the removal of moisture by the heating and vacuum extraction. Parts of the clay layer near the extraction well reached electrical conductivities as low as 40% of the pre-heating values. We propose that these regions of lower than ambient electrical conductivities are indicators of regions where the vapor removal by vacuum extraction was most effective. At the end of the heating phase, our estimates suggest that the clay saturation may have dropped to as low as 10% based on the observed conductivity changes.

  15. Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb

    Directory of Open Access Journals (Sweden)

    Nassim Rahimi

    2013-12-01

    Full Text Available Ultra low resistance ohmic contacts are fabricated on n-GaSb grown by molecular beam epitaxy. Different doping concentrations and n-GaSb thicknesses are studied to understand the tunneling transport mechanism between the metal contacts and the semiconductor. Different contact metallization and anneal process windows are investigated to achieve optimal penetration depth of Au in GaSb for low resistances. The fabrication, electrical characterization, and microstructure analysis of the metal-semiconductor interfaces created during ohmic contact formation are discussed. The characterization techniques include cross-sectional transmission electron microscopy and energy dispersive spectroscopy. Specific transfer resistances down to 0.1 Ω mm and specific contact resistances of 1 × 10−6 Ω cm2 are observed.

  16. Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Gong Rumin; Wang Jinyan; Dong Zhihua; Liu Shenghou; Yu Min; Wen, Cheng P; Hao Yilong [Insititute of Microelectronics, Peking University, Beijing, 100871 (China); Shen Bo [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Cai Yong; Zhang Baoshun [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou, 215125 (China); Zhang Jincheng, E-mail: jywang@ime.pku.edu.c [Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi' an 710071 (China)

    2010-10-06

    A novel stacked Ti/Al based Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au Ohmic contact structure is optimized. Compared with the conventional alloyed Ti/Al/Ni/Au Ohmic contact structure, the novel Ohmic contact structure can obtain much lower contact resistance and specific contact resistivity. Through analysis of x-ray diffraction spectra, cross-section transmission electron microscopy images and corresponding electron dispersive x-ray spectroscopy spectra in the novel stacked Ti/Al based Ohmic structure, the reactions between metals and the AlGaN layer were proven to be stable, uniform and continuous, which produced smooth contact interface. In addition, the top Au layer was prevented from diffusing downwards to the metal/AlGaN interface, which degraded the Ohmic performance.

  17. Seebeck Coefficient of Manganese Oxide Nanoparticles as a Function of Ohmic Resistance

    Science.gov (United States)

    Francis, Nicholas; Hedden, Morgan; Constantin, Costel

    2013-03-01

    Due to the ever increasing energy demand and growing global concern over the environmental impact of CO2 emissions, there is an urging need to seek solutions to transit from fossil fuels to sustainable energy. Thermoelectric (TE) materials show great promise for converting waste heat energy into electricity. TE systems have many unique advantages such as silent operationality, time reliability, and dimensional scalability. Most recently, researchers Song et al. found that MnO2 nanoparticles show a giant Seebeck coefficient of S = 20 mV/K, which is100 times higher than bismuth telluride, one of the best TE materials. Song et al. concluded the paper claiming that the giant S is related to the surface density of the electronic states (DOS). However, they provided very little information about the S as a function of Ohmic resistance [R] for different nano particle sizes which can give information about the DOS. Our preliminary results show that there is a sudden increase of S from 0.33-0.63 mV/K as R increases from 80-110 Ohms. This transition has never been seen before and it can give clues as to the existence of the Giant S observed in this material. This work was supported in part by U.S. Department of Energy Grant #DE-EE0003100..

  18. Ohmic resistance affects microbial community and electrochemical kinetics in a multi-anode microbial electrochemical cell

    Science.gov (United States)

    Dhar, Bipro Ranjan; Ryu, Hodon; Santo Domingo, Jorge W.; Lee, Hyung-Sool

    2016-11-01

    Multi-anode microbial electrochemical cells (MxCs) are considered as one of the most promising configurations for scale-up of MxCs, but understanding of anode kinetics in multiple anodes is limited in the MxCs. In this study we assessed microbial community and electrochemical kinetic parameters for biofilms on individual anodes in a multi-anode MxC to better comprehend anode fundamentals. Microbial community analysis targeting 16S rRNA Illumina sequencing showed that Geobacter genus was abundant (87%) only on the biofilm anode closest to a reference electrode (low ohmic energy loss) in which current density was the highest among three anodes. In comparison, Geobacter populations were less than 1% for biofilms on other two anodes distant from the reference electrode (high ohmic energy loss), generating small current density. Half-saturation anode potential (EKA) was the lowest at -0.251 to -0.242 V (vs. standard hydrogen electrode) for the closest biofilm anode to the reference electrode, while EKA was as high as -0.134 V for the farthest anode. Our study proves that electric potential of individual anodes changed by ohmic energy loss shifts biofilm communities on individual anodes and consequently influences electron transfer kinetics on each anode in the multi-anode MxC.

  19. Non-ohmic resistive state in ion-irradiated YBa sub 2 Cu sub 3 O sub 7-x

    Energy Technology Data Exchange (ETDEWEB)

    Iwase, A.; Masaki, N.; Iwata, T. (Dept. of Physics, Japan Atomic Energy Research Inst., Ibaraki (Japan)); Nihira, T. (Faculty of Engineering, Ibaraki Univ. (Japan))

    1991-03-15

    We have studied the effect of 120 MeV {sup 16}O ion irradiation on the non-ohmic electrical resistive state at 77.3 K in YBa{sub 2}Cu{sub 3}O{sub 7-x}. For small measuring currents, the voltage V varies as a power of the current I and the ion-fluence PHI, i.e. Vproportional to I{sup n} and Vproportional to PHI{sup m}, where the exponents n and m are functions of the ion-fluence and the current, respectively. For larger currents, the voltage obeys another power-law: Vproportional to Isup(n'), where n' is lower than n at a given ion-fluence. Analysis of the experimental data using a model current-induced unbinding of thermally excited vortex pairs shows that ion-irradiations cause the enhancement of dissociation of the bound vortex-antivortex pairs. (orig.).

  20. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    Science.gov (United States)

    Dasgupta, Sansaptak; Nidhi, Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-04-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher ft and fmax in high electron mobility transistors (HEMTs). N-polar (0001¯) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  1. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    NARCIS (Netherlands)

    Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

    2014-01-01

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact i

  2. Effect of ohmic, mass-transfer, and kinetic resistances on linear-sweep voltammetry in a cylindrical-pore electrode

    Science.gov (United States)

    Weidner, John W.; Fedkiw, Peter S.

    1991-01-01

    A means is presented to account for the effect of ohmic, mass-transfer, and kinetic resistances on linear-sweep voltammograms by modeling a pore in a porous matrix as a cylindrical-pore electrode, and solving the mass and charge conservation equations in the context of this geometry for the simply redox reaction O + ne(-) yield R where both O and R are soluble species. Both analytical and numerical techniques are used to solve the governing equations. The calculated peak currents and potentials are correlated by empirical formulas to the measurable parameters: sweep rate, concentration of the redox species, diffusion coefficient, conductivity of the electrolyte, and pore dimensions. Using the correlations, a methodology is established for determining if the redox reaction kinetics are irreversible or reversible (Nernstian). If the reaction is irreversible, it is shown how the standard rate constant and the transfer coefficient may be extracted from linear-sweep voltammetry data, or, if the reaction is reversible, how the number of electrons transferred may be deduced.

  3. Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors

    Science.gov (United States)

    Nidhi; Brown, David F.; Keller, Stacia; Mishra, Umesh K.

    2010-02-01

    Ultra-low ohmic contact resistance of 0.1 Ω mm has been obtained as a step towards a deep-recess structure using N-polar GaN-based high electron mobility transistors (HEMTs). An AlGaN etchstop layer was investigated to obtain smooth and reliable gate recess. However due to reverse polarization, AlGaN results in a polarization-induced Schottky barrier which prevents ohmic contact to the channel through the etchstop. In this work, we have proposed a novel methodology to contact the two-dimensional electron gas (2DEG) by etching through the GaN cap and the AlGaN etchstop to eliminate the barrier and angular-evaporation of metals to achieve side-alloying resulting in very low ohmic contact resistance of 0.1 Ω mm achieved to N-polar GaN 2DEG. This result is state-of-the-art for alloyed contacts achieved to GaN-based 2DEG.

  4. Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

    Science.gov (United States)

    Mori, Kazuki; Takeda, Kunihiro; Kusafuka, Toshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    2016-05-01

    We investigated a V-based electrode for the realization of low ohmic-contact resistivity in n-type AlGaN with a high AlN molar fraction characterized by the circular transmission line model. The contact resistivity of n-type Al0.62Ga0.38N prepared using the V/Al/Ni/Au electrode reached 1.13 × 10-6 Ω cm2. Using this electrode, we also demonstrated the fabrication of UV light-emitting diodes (LEDs) with an emission wavelength of approximately 300 nm. An operating voltage of LED prepared using a V/Al/Ni/Au electrode was 1.6 V lower at 100 mA current injection than that prepared using a Ti/Al/Ti/Au electrode, with a specific contact resistance of approximately 2.36 × 10-4 Ω cm2 for n-type Al0.62Ga0.38N.

  5. Ohmic contacts to semiconducting diamond

    Science.gov (United States)

    Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

    1990-10-01

    Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

  6. Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

    KAUST Repository

    Gupta, Rahul P.

    2010-04-27

    A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

  7. Effects of ultra-vacuum and space environment on contact ohmic resistance: LDEF experiment AO 138-11

    Science.gov (United States)

    Assie, Jean-Pierre; Perotto, Alfred

    1992-01-01

    The FRECOPA experimentation of chemical resistance of electrical connector contacts, as described, has evidenced the detrimental time variations of nickel plated conductors and gilded copper contacts, irrespective of crimping storage or metal peening conditions. With a view to reorient aluminum technology a silvered aluminum conductor/gilded aluminum contact solution was evaluated.

  8. Ohmic contacts to Gallium Nitride materials

    Science.gov (United States)

    Greco, Giuseppe; Iucolano, Ferdinando; Roccaforte, Fabrizio

    2016-10-01

    In this review article, a comprehensive study of the mechanisms of Ohmic contact formation on GaN-based materials is presented. After a brief introduction on the physics of Ohmic contacts, a resume of the most important results obtained in literature is reported for each of the systems taken in consideration (n-type GaN, p-type GaN and AlGaN/GaN heterostructures). The optimal metallization schemes and processing conditions to obtain low resistance Ohmic contacts are presented, discussing the role of the single metals composing the stack and the modification induced by the thermal annealing, either on the metal layers or at the interface with GaN. Physical insights on the mechanism of Ohmic contact formation have been gained by correlating the temperature dependence of the electrical parameters with a morphological/structural analysis of the interface. In the case of the AlGaN/GaN systems, the influence of the heterostructure parameters on the Ohmic contacts has been taken into account adapting the classical thermionic field emission model to the presence of the two dimensional electron gas (2DEG). Finally, the state of the art of "Au-free" metallization to AlGaN/GaN heterostructures is also presented, being this latter a relevant topic for the integration of GaN technology on large scale Silicon devices fabs.

  9. Ohmic contacts to Gallium Nitride materials

    Energy Technology Data Exchange (ETDEWEB)

    Greco, Giuseppe [Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII, n. 5 - Zona Industriale, 95121 Catania (Italy); Iucolano, Ferdinando [STMicroelectronics, Stradale Primosole 50, 95121 Catania (Italy); Roccaforte, Fabrizio, E-mail: fabrizio.roccaforte@imm.cnr.it [Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII, n. 5 - Zona Industriale, 95121 Catania (Italy)

    2016-10-15

    Highlights: • Ohmic contacts are a crucial issue for wide band gap semiconductors devices. • This paper reviews the mechanisms of Ohmic contact formation on GaN-based materials. • Ti/Al-based contacts and multilayers (Ti/Al/X/Au) are used for n-type GaN. • Ni/Au-based bilayers are used for Ohmic contacts to p-type GaN. • Several parameters affect Ohmic contact formation to AlGaN/GaN heterostructures . • Au-free contacts are important for the integration of GaN technology on Si-fabs. - Abstract: In this review article, a comprehensive study of the mechanisms of Ohmic contact formation on GaN-based materials is presented. After a brief introduction on the physics of Ohmic contacts, a resume of the most important results obtained in literature is reported for each of the systems taken in consideration (n-type GaN, p-type GaN and AlGaN/GaN heterostructures). The optimal metallization schemes and processing conditions to obtain low resistance Ohmic contacts are presented, discussing the role of the single metals composing the stack and the modification induced by the thermal annealing, either on the metal layers or at the interface with GaN. Physical insights on the mechanism of Ohmic contact formation have been gained by correlating the temperature dependence of the electrical parameters with a morphological/structural analysis of the interface. In the case of the AlGaN/GaN systems, the influence of the heterostructure parameters on the Ohmic contacts has been taken into account adapting the classical thermionic field emission model to the presence of the two dimensional electron gas (2DEG). Finally, the state of the art of “Au-free” metallization to AlGaN/GaN heterostructures is also presented, being this latter a relevant topic for the integration of GaN technology on large scale Silicon devices fabs.

  10. Ohmic Heating: Concept and Applications-A Review.

    Science.gov (United States)

    Kaur, Nimratbir; Singh, A K

    2016-10-25

    Ohmic heating, also known as Joule heating, electrical resistance heating, and direct electrical resistance heating, is a process of heating the food by passing electric current. In ohmic heating the energy is dissipated directly into the food. Electrical conductivity is a key parameter in the design of an effective ohmic heater. A large number of potential applications exist for ohmic heating, including blanching, evaporation, dehydration, fermentation, sterilization, pasteurization, and heating of foods. Beyond heating, applied electric field under ohmic heating causes electroporation of cell membranes, which increase extraction rates, and reduce gelatinization temperature and enthalpy. Ohmic heating results in faster heating of food along with maintenance of color and nutritional value of food. Water absorption index, water solubility index, thermal properties, and pasting properties are altered with the application of ohmic heating. Ohmic heating results in pre-gelatinized starches, which reduce energy requirement during processing. But its higher initial cost, lack of its applications in foods containing fats and oils, and less awareness limit its use.

  11. Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Jungwoo, E-mail: jungwoo.oh@sematech.org [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States); Huang, Jeff [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States); Chen, Yen-Ting [Universityof Texas, Austin, TX (United States); Ok, Injo [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States); Jeon, Kanghoon [Universityof California, Berkeley, CA (United States); Lee, Se-Hoon [Universityof Texas, Austin, TX (United States); Sassman, Barry; Loh, Wei-Yip [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States); Lee, Hi-Deok [Chungnam National University (Korea, Republic of); Ko, Dea-Hong [Yonsei University (Korea, Republic of); Majhi, Prashant; Kirsch, Paul; Jammy, Raj [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States)

    2011-10-31

    We report the results of a systematic study to understand low drive current of Ge-nMOSFET (metal-oxide-semiconductor field-effect transistor). The poor electron transport property is primarily attributed to the low dopant activation efficiency and high contact resistance. Results are supported by analyzing source/drain Ohmic metal contacts to n-type Ge using the transmission line method. Ni contacts to Ge nMOSFETs exhibit specific contact resistances of 10{sup -3}-10{sup -5} {Omega} cm{sup 2}, which is significantly higher than the 10{sup -7}-10{sup -8} {Omega} cm{sup 2} of Ni contacts to Ge pMOSFETs. The high resistance of Ni Ohmic contacts to n-type Ge is attributed mainly to insufficient dopant activation in Ge (or high sheet resistance) and a high tunneling barrier. Results obtained in this work identify one of the root causes of the lower than expected Ge nMOSFET transport issue, advancing high mobility Ge channel technology.

  12. Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique

    Science.gov (United States)

    Liu, J.; Wang, J.; Wang, H.; Zhu, L.; Wu, W.

    2017-06-01

    Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω·mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

  13. Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

    OpenAIRE

    2014-01-01

    In electrical devices and integrated circuits, ohmic contacts are necessary and a prerequisite for the current transport over the metal-semiconductor junctions. At the same time, a desired property of the ohmic contacts is to not add resistance or in other way disturb the performance. For high temperature electronics, the material demands are high regarding functionality and stability at elevated working temperatures, during and after temperature cycling and during long time of use.  Silicon ...

  14. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

  15. Dual ohmic contact to N- and P-type silicon carbide

    Science.gov (United States)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  16. The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN%Ni/Ag/Ti/Au与p-GaN的欧姆接触性能及光反射率

    Institute of Scientific and Technical Information of China (English)

    黄亚平; 刘硕; 云峰; 丁文; 王越; 王宏; 赵宇坤; 张烨; 郭茂峰; 侯洵

    2014-01-01

    The ohmic reflectivity of Ni/Ag/Ti/Au in contact with p-GaN is studied. It is found that under different thickness values of Ni, different annealing temperatures and different annealing atmospheres, the performances of Ni/Ag/Ti/Au electrode are greatly changed. The contact resistivity is measured using the transmission line model. The reflectivity of the electrode is investigated by using a spectrophotometer. The results reveal that the thinner the Ni metal layer, the higher its reflectivity is, in addition, the thickness value of Ni metal has a little influence on contact resistivity. There appears an abrupt decrease in reflectivity of electrode after annealing at a temperature higher than 400 ◦C. It is noticed that the reflectivity decreases more sharply after annealing in oxygen atmosphere than in nitrogen atmosphere. However, annealing in oxygen atmosphere is more helpful to reduce the contact resistivity. The comprehensive evaluations of the contact resistivity and reflectivity indicate that the better performances of Ni (1 nm)/Ag/Ti/Au electrode after rapid annealing in oxygen atmosphere at 400 ◦C are achieved: its contact resistance reaches 5.5 × 10-3 Ω·cm2 and reflectivity rises up to 85%at 450 nm. Light emitting diode (LED) of vertical structure is fabricated with an optimal electrode. The LED under an injection current of 350 mA can achieve the following working parameters: the working voltage is 3.2 V, the optical output power is 270 mW, and the electro-optical conversion efficiency is 24%.%研究了不同Ni厚度的Ni/Ag/Ti/Au电极在不同退火温度和退火气氛下与p-GaN之间的欧姆接触性能以及电极的光反射率的变化.采用矩形传输线模型对各电极的比接触电阻率进行测算,利用分光光度计对电极在不同波长下的反射率进行测量.结果表明, Ni金属层的厚度越小,电极的光反射率越高,而Ni层厚度对比接触电阻率的影响较小;当退火温度高于400◦C后,电极的

  17. Ohmic Dissipation in Mini-Neptunes

    Science.gov (United States)

    Pu, Bonan; Valencia, Diana

    2017-09-01

    In the presence of a magnetic field and weakly ionizing winds, ohmic dissipation is expected to take place in the envelopes of Jovian and lower-mass planets alike. While the process has been investigated on the former, there have been no studies done on mini-Neptunes so far. From structure and thermal evolution models, we determine that the required energy deposition for halting the contraction of mini-Neptunes increases with planetary mass and envelope fraction. Scaled to the insolation power, the ohmic heating needed is small: ∼ {10}-5 orders of magnitude lower than for exo-Jupiters ∼ {10}-2. Conversely, from solving the magnetic induction equation, we find that ohmic energy is dissipated more readily for lower-mass planets and those with larger envelope fractions. Combining these two trends, we find that ohmic dissipation in hot mini-Neptunes is strong enough to inflate their radii (∼ {10}15 W for {T}{eq}=1400 {{K}}). The implication is that the radii of hot mini-Neptunes may be attributed in part to ohmic heating. Thus, there is a trade-off between ohmic dissipation and H/He content for hot mini-Neptunes, adding a new degeneracy for the interpretation of the composition of such planets. In addition, ohmic dissipation would make mini-Neptunes more vulnerable to atmospheric evaporation.

  18. Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor

    Directory of Open Access Journals (Sweden)

    I.A. Rogachev

    2016-06-01

    Full Text Available Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact – 0.4 Ohm·mm. Studied influence of encapsulation ohmic contacts on their surface morphology.

  19. High current density stability of ohmic contacts to silicon carbide

    Science.gov (United States)

    Downey, Brian P.

    The materials properties of SiC, such as wide bandgap, high breakdown electric field, and good thermal conductivity, make it an appealing option for high temperature and high power applications. The replacement of Si devices with SiC components could lead to a reduction in device size, weight, complexity, and cooling requirements along with an increase in device efficiency. One area of concern under high temperature or high current operation is the stability of the ohmic contacts. Ohmic contact degradation can cause an increase in parasitic resistance, which can diminish device performance. While contact studies have primarily focused on the high temperature stability of ohmic contacts to SiC, different failure mechanisms may arise under high current density stressing due to the influence of electromigration. In addition, preferential degradation may occur at the anode or cathode due to the directionality of current flow, known as a polarity effect. The failure mechanisms of ohmic contacts to p-type SiC under high current density stressing are explored. Complementary materials characterization techniques were used to analyze contact degradation, particularly the use of cross-sections prepared by focused ion beam for imaging using field emission scanning electron microscopy and elemental analysis using Auger electron spectroscopy. Initially the degradation of commonly studied Ni and Al-based contacts was investigated under continuous DC current. The contact metallization included a bond pad consisting of a TiW diffusion barrier and thick Au overlayer. The Ni contacts were found to degrade due to the growth of voids within the ohmic contact layer, which were initially produced during the high temperature Ni/SiC ohmic contact anneal. The Al-based contacts degraded due to the movement of Al from the ohmic contact layer to the surface of the Au bond pad, and the movement of Au into the ohmic contact layer from the bond pad. The inequality of Al and Au fluxes generated

  20. Nutritional impact of ohmic heating on fruits and vegetables—A review

    Directory of Open Access Journals (Sweden)

    Ranvir Kaur

    2016-12-01

    Full Text Available Ohmic heating, also called electrical resistance heating, joule heating, or electro-conductive heating, is an advanced thermal food processing technique where heat is internally generated in a sample due to electrical resistance when electric current is passed through it. It is a novel technique which provides rapid and uniform heating, resulting in less thermal damage to the food product. According to the recent literature, plant products are most suitable and often used for ohmic heat processing. Beyond heating of fruits and vegetables, the applied electric field under ohmic heating causes various changes in quality and nutritional parameters which include inactivation of enzymes and micro-organisms, degradation of heat-sensitive compounds, changes in cell membranes, viscosity, pH, color, and rheology. Ohmic heating rate depends on the electrical field strength and electrical conductivity of product. This review focuses on various factors affecting the electrical conductivity of fruits and vegetables and the effect of ohmic heating on their quality and nutritional properties.

  1. Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHEN Cong-Mian; LIU Xue-qin; YAN Zhi-Jun; GONG Heng-Xiang; WANG Yin-Yue

    2000-01-01

    The as-deposited Au/Ti/p-diamond contacts prepared by rf sputtering are ohmic. The ohmic characteristics of the contacts are improved after annealing. As for the as-deposited and annealed contacts, the specific contact resistivities of 2.886×10-3 and 2.040×10-4Ω.cm2 are obtained, respectively. The x-ray photoelectron spectroscopy analysis indicates that the titanium carbide formation occurs at the interface between titanium and the diamond substrate in the as-deposited state, and no TiO2 is observed.

  2. Does p-type ohmic contact exist in WSe2-metal interfaces?

    Science.gov (United States)

    Wang, Yangyang; Yang, Ruo Xi; Quhe, Ruge; Zhong, Hongxia; Cong, Linxiao; Ye, Meng; Ni, Zeyuan; Song, Zhigang; Yang, Jinbo; Shi, Junjie; Li, Ju; Lu, Jing

    2015-12-01

    Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for

  3. Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements

    OpenAIRE

    Murata, Masayuki; Hasegawa, Yasuhiro

    2013-01-01

    Ohmic contact electrodes for four-wire resistance and Hall measurements were fabricated on an individual single-crystal bismuth nanowire encapsulated in a cylindrical quartz template. Focused ion beam processing was utilized to expose the side surfaces of the bismuth nanowire in the template, and carbon and tungsten electrodes were deposited on the bismuth nanowire in situ to achieve electrical contacts. The temperature dependence of the four-wire resistance was successfully measured for the ...

  4. Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn

    Science.gov (United States)

    Zhang, Xu; Zhang, Dongliang; Zheng, Jun; Liu, Zhi; He, Chao; Xue, Chunlai; Zhang, Guangze; Li, Chuanbo; Cheng, Buwen; Wang, Qiming

    2015-12-01

    In this study, a Ni/Al Ohmic contact on a highly doped n-type GeSn has been investigated. A specific contact resistivity as low as (2.26 ± 0.11) × 10-4 Ω cm2 was obtained with the GeSn sample annealed at a temperature of 450 °C for 30 s. The linear Ohmic behavior was attributed to the low resistance of the Ni(GeSn) phase; this behavior was determined using glancing-angle X-ray diffraction, and the quantum tunneling current through the Schottky barrier narrowed because of high doping; this phenomenon was confirmed from the contact resistance characteristics at different temperatures from 45 to 205 K.

  5. Power requirement of the geodynamo from ohmic losses in numerical and laboratory dynamos.

    Science.gov (United States)

    Christensen, Ulrich R; Tilgner, Andreas

    2004-05-13

    In the Earth's fluid outer core, a dynamo process converts thermal and gravitational energy into magnetic energy. The power needed to sustain the geomagnetic field is set by the ohmic losses (dissipation due to electrical resistance). Recent estimates of ohmic losses cover a wide range, from 0.1 to 3.5 TW, or roughly 0.3-10% of the Earth's surface heat flow. The energy requirement of the dynamo puts constraints on the thermal budget and evolution of the core through Earth's history. Here we use a set of numerical dynamo models to derive scaling relations between the core's characteristic dissipation time and the core's magnetic and hydrodynamic Reynolds numbers--dimensionless numbers that measure the ratio of advective transport to magnetic and viscous diffusion, respectively. The ohmic dissipation of the Karlsruhe dynamo experiment supports a simple dependence on the magnetic Reynolds number alone, indicating that flow turbulence in the experiment and in the Earth's core has little influence on its characteristic dissipation time. We use these results to predict moderate ohmic dissipation in the range of 0.2-0.5 TW, which removes the need for strong radioactive heating in the core and allows the age of the solid inner core to exceed 2.5 billion years.

  6. Ohmic Dissipation in the Atmospheres of Hot Jupiters

    CERN Document Server

    Perna, Rosalba; Rauscher, Emily

    2010-01-01

    Hot Jupiter atmospheres exhibit fast, weakly-ionized winds. The interaction of these winds with the planetary magnetic field generates drag on the winds and leads to ohmic dissipation of the induced electric currents. We study the magnitude of ohmic dissipation in representative, three-dimensional atmospheric circulation models of the hot Jupiter HD 209458b. We find that ohmic dissipation can reach or exceed 1% of the stellar insolation power in the deepest atmospheric layers, in models with and without dragged winds. Such power, dissipated in the deep atmosphere, appears sufficient to slow down planetary contraction and explain the typically inflated radii of hot Jupiters. This atmospheric scenario does not require a top insulating layer or radial currents that penetrate deep in the planetary interior. Circulation in the deepest atmospheric layers may actually be driven by spatially non-uniform ohmic dissipation. A consistent treatment of magnetic drag and ohmic dissipation is required to further elucidate t...

  7. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

    Science.gov (United States)

    Wang, Cong; Kim, Nam-Young

    2012-02-07

    Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

  8. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    Science.gov (United States)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  9. Turbulence, Transport and Waves in Ohmic Dead Zones

    CERN Document Server

    Gole, Daniel; Lubow, Stephen H; Armitage, Philip J

    2016-01-01

    We use local numerical simulations to study a vertically stratified accretion disk with a resistive mid-plane that damps magnetohydrodynamic (MHD) turbulence. This is an idealized model for the dead zones that may be present at some radii in protoplanetary and dwarf novae disks. We vary the relative thickness of the dead and active zones to quantify how forced fluid motions in the dead zone change. We find that the residual Reynolds stress near the mid-plane decreases with increasing dead zone thickness, becoming negligible in cases where the active to dead mass ratio is less than a few percent. This implies that purely Ohmic dead zones would be vulnerable to episodic accretion outbursts via the mechanism of Martin & Lubow (2011). We show that even thick dead zones support a large amount of kinetic energy, but this energy is largely in fluid motions that are inefficient at angular momentum transport. Confirming results from Oishi & Mac Low (2009), the perturbed velocity field in the dead zone is domin...

  10. Ohmic model for electrodeposition of metallic ions

    Energy Technology Data Exchange (ETDEWEB)

    Gliozzi, A.S. [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 29, 10129 Torino (Italy); Alexe-Ionescu, A.L. [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 29, 10129 Torino (Italy); Department of Physics, University Politehnica of Bucharest, Splaiul Independentei 313, 060042 Bucharest (Romania); Barbero, G., E-mail: giovanni.barbero@polito.it [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 29, 10129 Torino (Italy)

    2015-10-23

    An ohmic model to describe the electrodeposition of metallic ions on the electrodes is proposed. We assume that the ionic distribution is homogeneous across the electrolytic cell, and that the ionic current is due to the bulk electric field. The nucleation in the electrodeposition is supposed to be well described by a kinetic equation at the electrode, taking into account the neutralization of metallic ions on the electrodes. Two cases are considered. In the first case the characteristic time describing the neutralization of the ions is supposed to be negligible with respect to the flight time of the ions across the cell. In this framework the bulk electric field coincides with the external electric field, and our analysis gives analytical formulae for the surface density of deposited ions and for the electric current in the external circuit. The case where the two characteristic times are comparable, and the effective electric field in the bulk depends on the surface deposition, is considered too. In this case the ordinary differential equations describing the ionic distribution and the adsorption phenomenon have to be solved numerically. The agreement between the presented model and the experimental results published by several groups is reasonably good.

  11. Developing and modelling of ohmic heating for solid food products

    DEFF Research Database (Denmark)

    Feyissa, Aberham Hailu; Frosch, Stina

    such as meat and seafood is not industrially utilized yet. Therefore, the aim of the current work is to model and develop the ohmic heating technology for heating of solid meat and seafood. A 3D mathematical model of coupled heat transfer and electric field during ohmic heating of meat products has been......Heating of solid foods using the conventional technologies is time-consuming due to the fact that heat transfer is limited by internal conduction within the product. This is a big challenge to food manufactures who wish to heat the product faster to the desired core temperature and to ensure more...... uniform quality across the product. Ohmic heating is one of the novel technologies potentially solving this problem by allowing volumetric heating of the product and thereby reducing or eliminating temperature gradients within the product. However, the application of ohmic heating for solid food products...

  12. Ohmic scaling based on current diffusive ballooning mode

    Energy Technology Data Exchange (ETDEWEB)

    Yagi, Masatoshi; Itoh, Sanae [Kyushu Univ., Kasuga, Fukuoka (Japan). Research Inst. for Applied Mechanics; Fukuyama, Atsushi; Itoh, Kimitaka

    1996-01-01

    Based on the anomalous transport model due to current diffusive ballooning mode turbulence, the global energy confinement time in a tokamak with Ohmic heating is theoretically studied. Relations to empirical scaling laws are also discussed. (author)

  13. A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 C

    Science.gov (United States)

    Okojie, Robert S.; Evans, Laura J.; Lukco, Dorothy; Morris, Joseph P.

    2010-01-01

    A novel tungsten-nickel ohmic contact metallization on 4H-SiC and 6H-SiC capable of surviving temperatures as high as 900 C is reported. Preliminary results revealed the following: 1) ohmic contact on n-type 4H-SiC having net doping levels (Nd's) of 1.4 and 2 x 10(exp 19) per cubic centimeter, with specific contact resistances rhosNd's of 7.69 x 10(exp -4) and 5.81 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after rapid thermal annealing (RTA), and 5.9 x 10(exp -3) and 2.51 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after subsequent soak at 900 C for 1 h in argon, and 2) ohmic contact on n- and p-type 6H-SiC having Nd > 2 x 10(exp 19) and Na > 1 x 10(exp 20) per cubic centimeter, with rhosNd = 5 x 10(exp -5) and rhosNa = 2 X 10(exp -4) OMEGA (raised dot) square centimeter, respectively, after RTA, and rhosNd = 2.5 x 10 (exp -5) and rhosNa = 1.5 x 10(exp -4) OMEGA (raised dot) square centimeter after subsequent treatment at 900 C for 1 h in argon, respectively.

  14. Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing

    Science.gov (United States)

    Katz, A.; Weir, B. E.; Chu, S. N. G.; Thomas, P. M.; Soler, M.; Boone, T.; Dautremont-Smith, W. C.

    1990-04-01

    Low resistance nonalloyed ohmic contacts of e-gun evaporated Pt/Ti to S doped n-InP 5×1017, 1×1018, and 5×1018 cm-3 have been fabricated by rapid thermal processing. The contacts to the lower doped substrates (5×1017 and 1×1018 cm-3) were rectifying as-deposited as well as after heat treatment at temperatures lower than 350 °C. Higher processing temperatures stimulated the Schottky to ohmic contact conversion with minimum specific contact resistance of 1.5×10-5 and 5×10-6 Ω cm2, respectively, as a result of rapid thermal processing at 450 °C for 30 s. Heating at a temperature of 550 °C again yielded a Schottky contact. The contact to the 5×1018 cm-3 InP was ohmic as deposited with a specific contact resistance value of 1.1×10-4 Ω cm2. Supplying heat treatment to the contact caused a decrease of the specific contact resistance to a minimum of 8×10-7 Ω cm2 as a result of rapid thermal processing at 450 °C for 30 s. In all cases, this heat treatment caused a limited interfacial reactions between the Ti and the InP, and resulted in an almost abrupt interface. Heating at temperatures higher than 500 °C resulted in an interfacial intermixing and a mutual migration and reaction of the Ti and the semiconductor elements. The Pt/Ti bilayer structure was highly tensile as deposited (5×109 dyn cm-2) and became stress-free as a result of the interfacial reactions which took place while heating the samples to temperature of 400 °C or higher.

  15. Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hailong; Shen, Huajun, E-mail: shenhuajun@ime.ac.cn; Tang, Yidan; Bai, Yun; Liu, Xinyu [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xufang [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wu, Yudong; Liu, Kean [Zhuzhou CSR Times Electric Co., Ltd, ZhuZhou 412001 (China)

    2015-01-14

    Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities were also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC contacts degraded in different degrees, and the contact morphology deteriorated with the increases of the average surface roughness and interface voids. X-ray spectra showed that Ni{sub 2}Si and Ti{sub 3}SiC{sub 2}, which were formed during ohmic contact annealing and contributed to low contact resistivity, were stable under high temperature storage. The existence of the TiAl{sub 3} and NiAl{sub 3} intermetallic phases was helpful to prevent Al agglomeration on the interface and make the contacts thermally stable. Auger electron spectroscopy indicated that the incorporation of oxygen at the surface and interface led to the oxidation of Al or Ti resulting in increased contact resistance. Also, the formation of these oxides roughened the surface and interface. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism dominates the current transport for contacts before and after the thermal treatment. It suggests that the Ni/Ti/Al composite ohmic contacts are promising for SiC devices to be used in high temperature applications.

  16. Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

    Directory of Open Access Journals (Sweden)

    Wojciech Macherzynski

    2016-01-01

    Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

  17. High magnetic field ohmically decoupled non-contact technology

    Science.gov (United States)

    Wilgen, John [Oak Ridge, TN; Kisner, Roger [Knoxville, TN; Ludtka, Gerard [Oak Ridge, TN; Ludtka, Gail [Oak Ridge, TN; Jaramillo, Roger [Knoxville, TN

    2009-05-19

    Methods and apparatus are described for high magnetic field ohmically decoupled non-contact treatment of conductive materials in a high magnetic field. A method includes applying a high magnetic field to at least a portion of a conductive material; and applying an inductive magnetic field to at least a fraction of the conductive material to induce a surface current within the fraction of the conductive material, the surface current generating a substantially bi-directional force that defines a vibration. The high magnetic field and the inductive magnetic field are substantially confocal, the fraction of the conductive material is located within the portion of the conductive material and ohmic heating from the surface current is ohmically decoupled from the vibration. An apparatus includes a high magnetic field coil defining an applied high magnetic field; an inductive magnetic field coil coupled to the high magnetic field coil, the inductive magnetic field coil defining an applied inductive magnetic field; and a processing zone located within both the applied high magnetic field and the applied inductive magnetic field. The high magnetic field and the inductive magnetic field are substantially confocal, and ohmic heating of a conductive material located in the processing zone is ohmically decoupled from a vibration of the conductive material.

  18. Ohmic Heating: An Emerging Concept in Organic Synthesis.

    Science.gov (United States)

    Silva, Vera L M; Santos, Luis M N B F; Silva, Artur M S

    2017-06-12

    The ohmic heating also known as direct Joule heating, is an advanced thermal processing method, mainly used in the food industry to rapidly increase the temperature for either cooking or sterilization purposes. Its use in organic synthesis, in the heating of chemical reactors, is an emerging method that shows great potential, the development of which has started recently. This Concept article focuses on the use of ohmic heating as a new tool for organic synthesis. It presents the fundamentals of ohmic heating and makes a qualitative and quantitative comparison with other common heating methods. A brief description of the ohmic reactor prototype in operation is presented as well as recent examples of its use in organic synthesis at laboratory scale, thus showing the current state of the research. The advantages and limitations of this heating method, as well as its main current applications are also discussed. Finally, the prospects and potential implications of ohmic heating in future research in chemical synthesis are proposed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implanttation

    Institute of Scientific and Technical Information of China (English)

    Guo Hui; Wang Yue-Hu; Zhang Yu-Ming; Qiao Da-Yong; Zhang Yi-Men

    2009-01-01

    By formation of an intermediate semiconductor layer(ISL)with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method(TLM)test patterns is formed on N-wells created by P+ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-tyDe 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as loW as 4.23×10~(-5) Ω·cm~2 is achieved after annealing in N_2 at 800℃ for 3 min, which iS much lower than that(>900℃)in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge~+ ion implantations.

  20. A new method of making ohmic contacts to p-GaN

    Science.gov (United States)

    Hernández-Gutierrez, C. A.; Kudriavtsev, Yu.; Mota, Esteban; Hernández, A. G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V.; Casallas-Moreno, Y. L.; López-López, M.

    2016-12-01

    The structural, chemical, and electrical characteristics of In+ ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In+ ions with an implantation dose of 5 × 1015 ions/cm2 at room temperature to form a thin layer of InxGa1-xN located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In+ implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10-4 Ωcm2 was achieved for Au/Ni/p-InxGa1-xN/p-GaN ohmic contacts.

  1. Ohmic Inflation of Hot Jupiters: an Analytical Approach

    Science.gov (United States)

    Ginzburg, Sivan; Sari, Re'em

    2015-12-01

    Many giant exoplanets in close orbits have observed radii which exceed theoretical predictions.One suggested explanation for this discrepancy is heat deposited deep inside the atmospheres of these hot Jupiters.We present an analytical model for the evolution of such irradiated, and internally heated gas giants, and derive scaling laws for their cooling rates and radii.We estimate the Ohmic dissipation resulting from the interaction between the atmospheric winds and the planet's magnetic field, and apply our model to Ohmically heated planets.Our model can account for the observed radii of many inflated planets, but not the most extreme ones.We show that Ohmically heated planets have already reached their equilibrium phase and they no longer contract.We show that it is possible to re-inflate planets, but we confirm that re-heating timescales are longer by about a factor of 30 than cooling times.

  2. The role of Ohmic heating in dc magnetron sputtering

    Science.gov (United States)

    Brenning, N.; Gudmundsson, J. T.; Lundin, D.; Minea, T.; Raadu, M. A.; Helmersson, U.

    2016-12-01

    Sustaining a plasma in a magnetron discharge requires energization of the plasma electrons. In this work, Ohmic heating of electrons outside the cathode sheath is demonstrated to be typically of the same order as sheath energization, and a simple physical explanation is given. We propose a generalized Thornton equation that includes both sheath energization and Ohmic heating of electrons. The secondary electron emission yield {γ\\text{SE}} is identified as the key parameter determining the relative importance of the two processes. For a conventional 5 cm diameter planar dc magnetron, Ohmic heating is found to be more important than sheath energization for secondary electron emission yields below around 0.1.

  3. Copper-Metalized GaAs pHEMT with Cu/Ge Ohmic Contacts

    Directory of Open Access Journals (Sweden)

    E. V. Anichenko

    2012-01-01

    Full Text Available The fully Cu-metalized GaAs pHEMT using developed Cu/Ge-based ohmic contacts and T-gate Ti/Mo/Cu with length of the 150 nm has been successfully fabricated for the high-frequency applications. The fabricated Cu-metalized pHEMT has a maximum drain current of 360 mA/mm, an off-state gate-drain breakdown of 7 V, and a transconductance peak of 320 mS/mm at Vds=3 V. The maximum stable gain value was about 15 dB at frequency 10 GHz. The current gain cutoff frequency of the copper-metalized device is about 60 GHz at Vds=3 V, and maximum frequency of oscillations is beyond 100 GHz. This work investigated in detail the formation of Cu/Ge ohmic contacts to n-GaAs with an atomic hydrogen preannealing step. It was shown that after the first preliminary annealing is carried out in a flow of atomic hydrogen with a flow density of atoms of 1013/1016 at. cm2 s−1 a reduction in specific contact resistance by 2/2.5 times is observed. The reduction in specific contact resistance is apparently caused by the action of the hydrogen atoms which minimise the rate of the oxidizing reactions and activate solid phase reactions forming the ohmic contact during the thermal treatment process.

  4. Exchanging Ohmic Losses in Metamaterial Absorbers with Useful Optical Absorption for Photovoltaics

    CERN Document Server

    Vora, Ankit; Pala, Nezih; Kulkarni, Anand; Pearce, Joshua M; Güney, Durdu Ö

    2014-01-01

    Using metamaterial absorbers, we have shown that metallic layers in the absorbers do not necessarily constitute undesired resistive heating problem for photovoltaics. Tailoring the geometric skin depth of metals and employing the natural bulk absorbance characteristics of the semiconductors in those absorbers can enable the exchange of undesired resistive losses with the useful optical absorbance in the active semiconductors. Thus, Ohmic loss dominated metamaterial absorbers can be converted into photovoltaic near-perfect absorbers with the advantage of harvesting the full potential of light management offered by the metamaterial absorbers. Based on experimental permittivity data for indium gallium nitride, we have shown that between 75%-95% absorbance can be achieved in the semiconductor layers of the converted metamaterial absorbers. Besides other metamaterial and plasmonic devices, our results may also apply to photodectors and other metal or semiconductor based optical devices where resistive losses and p...

  5. Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

    Science.gov (United States)

    Takei, Yusuke; Tsutsui, Kazuo; Saito, Wataru; Kakushima, Kuniyuki; Wakabayashi, Hitoshi; Iwai, Hiroshi

    2016-04-01

    The dependence of ohmic contact resistance on the AlGaN layer thickness was evaluated for AlGaN/GaN high-electron-mobility transistor (HEMT) structures. Mo/Al/Ti contacts were formed on AlGaN layers with various thicknesses. The observed resistance characteristics are discussed on the basis of a model in which the overall contact resistance is composed of a series of three resistance components. Different dependences on the AlGaN layer thickness was observed after annealing at low temperatures (800-850 °C) and at high temperatures (900-950 °C). It was determined that lowering the resistance at the metal/AlGaN interface and that of the AlGaN layer is important for obtaining low-resistance ohmic contacts.

  6. A survey of ohmic contacts to III-V compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Zolper, J.C.; Briggs, R.D. [Sandia National Labs., Albuquerque, NM (United States); Ren, F. [Lucent Technologies, Murray Hill, NJ (United States); Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States)

    1997-04-01

    A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g., GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n- and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A new area of contact studies is for the wide bandgap group III-Nitride materials. At present, low resistivity ohmic contact to p-type GaN has not been obtained primarily due to the large acceptor ionization energy and the resultant difficulty in achieving high free hole concentrations at room temperature. For n-type GaN, however, significant progress has been reported with reactive Ti-based metalization schemes or the use of graded InGaN layers. The present status of these approaches will be reviewed.

  7. Quantum dissipative dynamics of a bistable system in the sub-Ohmic to super-Ohmic regime

    Science.gov (United States)

    Magazzù, Luca; Carollo, Angelo; Spagnolo, Bernardo; Valenti, Davide

    2016-05-01

    We investigate the quantum dynamics of a multilevel bistable system coupled to a bosonic heat bath beyond the perturbative regime. We consider different spectral densities of the bath, in the transition from sub-Ohmic to super-Ohmic dissipation, and different cutoff frequencies. The study is carried out by using the real-time path integral approach of the Feynman-Vernon influence functional. We find that, in the crossover dynamical regime characterized by damped intrawell oscillations and incoherent tunneling, the short time behavior and the time scales of the relaxation starting from a nonequilibrium initial condition depend nontrivially on the spectral properties of the heat bath.

  8. Magnetic, Electrical and Surface Morphological Characterization of AuGe/Ni/Au Ohmic Contact Metallization on GaAs/AlGaAs Multilayer Structures

    Directory of Open Access Journals (Sweden)

    T.S. Abhilash

    2011-01-01

    Full Text Available A process issue arising from the use of ferromagnetic Nickel in the AuGe/Ni/Au Ohmic contact metallization is studied in the context of magnetic field sensors and HEMT devices made using GaAs/AlGaAs multilayer structures with the two dimensional electron gas layer. The dependence of magnetization, contact resistance, adhesion, surface roughness and current distribution of alloyed Ohmic contacts on parameters such as Ni layer thickness, anneal temperature and Au-Ge alloy composition are discussed. The magnetization measurements provided some new and interesting insights into changes occurring in the metallization layers prior to alloying.

  9. Ohmic Dissipation in the Interiors of Hot Jupiters

    CERN Document Server

    Huang, Xu

    2012-01-01

    We present models of ohmic heating in the interiors of hot jupiters in which we decouple the interior and the wind zone by replacing the wind zone with a boundary temperature Tiso and magnetic field Bphi0. Ohmic heating influences the contraction of gas giants in two ways: by direct heating within the convection zone, and by heating outside the convection zone which increases the effective insulation of the interior. We calculate these effects, and show that internal ohmic heating is only able to slow the contraction rate of a cooling gas giant once the planet reaches a critical value of internal entropy. We determine the age of the gas giant when ohmic heating becomes important as a function of mass, Tiso and induced Bphi0. With this survey of parameter space complete, we then adopt the wind zone scalings of Menou (2012) and calculate the expected evolution of gas giants with different levels of irradiation. We find that,with this prescription of magnetic drag, it is difficult to inflate massive planets or t...

  10. Model for electrical conductivity of muscle meat during Ohmic heating

    NARCIS (Netherlands)

    Sman, van der R.G.M.

    2017-01-01

    A model is presented for predicting the electrical conductivity of muscle meat, which can be used for the evaluation of Ohmic heating. The model computes the conductivity as a function of composition, temperature and microstructure. The muscle meat is thought to be composed of protein, water, salt.

  11. Extended Heat Deposition in Hot Jupiters: Application to Ohmic Heating

    Science.gov (United States)

    Ginzburg, Sivan; Sari, Re'em

    2016-03-01

    The observed radii of many giant exoplanets in close orbits exceed theoretical predictions. One suggested origin for this discrepancy is heat deposited deep inside the atmospheres of these “hot Jupiters”. Here, we study extended power sources that distribute heat from the photosphere to the deep interior of the planet. Our analytical treatment is a generalization of a previous analysis of localized “point sources”. We model the deposition profile as a power law in the optical depth and find that planetary cooling and contraction halt when the internal luminosity (i.e., cooling rate) of the planet drops below the heat deposited in the planet’s convective region. A slowdown in the evolutionary cooling prior to equilibrium is possible only for sources that do not extend to the planet’s center. We estimate the ohmic dissipation resulting from the interaction between the atmospheric winds and the planet’s magnetic field, and apply our analytical model to ohmically heated planets. Our model can account for the observed radii of most inflated planets, which have equilibrium temperatures of ≈1500-2500 K and are inflated to a radius of ≈ 1.6{R}J. However, some extremely inflated planets remain unexplained by our model. We also argue that ohmically inflated planets have already reached their equilibrium phase, and no longer contract. Following Wu & Lithwick, who argued that ohmic heating could only suspend and not reverse contraction, we calculate the time it takes ohmic heating to re-inflate a cold planet to its equilibrium configuration. We find that while it is possible to re-inflate a cold planet, the re-inflation timescales are longer by a factor of ≈ 30 than the cooling time.

  12. Sintered Cr/Pt and Ni/Au ohmic contacts to B{sub 12}P{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Frye, Clint D., E-mail: frye6@llnl.gov [Lawrence Livermore National Laboratory, Livermore, California 94550 and Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506 (United States); Kucheyev, Sergei O.; Voss, Lars F.; Conway, Adam M.; Shao, Qinghui; Nikolić, Rebecca J., E-mail: nikolic1@llnl.gov [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Edgar, James H. [Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506 (United States)

    2015-05-15

    Icosahedral boron phosphide (B{sub 12}P{sub 2}) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B{sub 12}P{sub 2} for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2 × 10{sup −4} Ω cm{sup 2}, as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contact resistance was ∼l–4 × 10{sup −4} Ω cm{sup 2} after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B{sub 12}P{sub 2} at 700 °C and a reaction layer between Ni and B{sub 12}P{sub 2} thinner than ∼25 nm at 500 °C.

  13. Low temperature fabrication and doping concentration analysis of Au/Sb ohmic contacts to n-type Si

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J. Q.; Wang, C.; Zhu, T.; Wu, W. J. [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Fan, J.; Tu, L. C., E-mail: tlc@hust.edu.cn [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Institute of Geophysics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-11-15

    This paper investigates low temperature ohmic contact formation of Au/Sb to n-type Si substrates through AuSb/NiCr/Au metal stacks. Liquid epitaxy growth is utilized to incorporate Sb dopants into Si substrate in AuSi melt. The best specific contact resistivity achieved is 0.003 Ω ⋅ cm{sup 2} at 425 {sup o}C. Scanning electron microscopy (SEM) reveals inverted pyramidal crater regions at the metal/semiconductor interface, indicating that AuSi alloying efficiently occurs at such sites. Secondary ion mass spectroscopy (SIMS) shows that Sb atoms are successfully incorporated into Si as doping impurities during the anneal process, and the Sb doping concentration at the contact interface is found to be higher than the solid solubility limit in a Si crystal. This ohmic contacts formation method is suitable for semiconductor fabrication processes with limited thermal budget, such as post CMOS integration of MEMS.

  14. Ohmic and rectifying contacts on bulk AlN for radiation detector applications

    Energy Technology Data Exchange (ETDEWEB)

    Erlbacher, Tobias; Kallinger, Birgit; Meissner, Elke; Bauer, Anton J. [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Bickermann, Matthias [CrystAl-N GmbH, Am Weichselgarten 7, 91058 Erlangen (Germany); Department of Materials Science 6 (I-MEET), University of Erlangen-Nuernberg, Martensstrasse 7, 91058 Erlangen (Germany); Frey, Lothar [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Chair of Electron Devices, University of Erlangen-Nuernberg, Cauerstrasse 6, 91058 Erlangen (Germany)

    2012-03-15

    In this paper we report on ohmic and rectifying contacts fabricated on undoped bulk AlN substrates for radiation detector applications. The ohmic Ni contacts exhibit negligible contact resistances. Current conduction is dominated by field enhanced thermal emission from traps 0.4 to 0.6 eV below the conduction band. The Pt Schottky contacts show excellent rectifying behaviour. In forward conduction, device current is again limited by the Poole-Frenkel effect. The Schottky barrier features very low reverse leakage currents, and voltages of up to -200 V can be applied. The capability of bulk AlN for radiation detectors at room temperature is demonstrated. Suitability is deduced from both X-ray absorption experiments and low reverse leakage currents of the fabricated Schottky diodes. Additionally, the AlN substrate is almost blind to sun light due to its wide band gap. Still, reduction of recombination sites in AlN is required to achieve maximum detector performance. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Micro-structural evaluation of Ti/Al/Ni/Au ohmic contacts with different Ti/Al thicknesses in AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Mahajan, Somna S., E-mail: somnamahajan@gmail.com; Dhaul, Anuradha; Laishram, Robert; Kapoor, Sonalee; Vinayak, Seema; Sehgal, B.K.

    2014-04-01

    Highlights: • Ohmic contacts with four different Ti/Al metal thickness ratios were fabricated on undoped Al{sub .28}Ga{sub .72}N/GaN HEMT under various annealing cycles using Rapid thermal processor. • Ohmic contact with Ti/Al metal thickness ratio, 1/5 showed superior quality in terms of R{sub c} and surface morphology. • Ni–Al alloy segregation on the surface as analyzed by EDAX seems to be related to bumpy surface morphology. • Ohmic contact with Ti/Al metal ratio 1/5 showed the presence of TiN by X-ray diffraction analysis. This was further confirmed by SIMS analysis. • The lower level of elemental Ti and Al at the surface of the contact with Ti/Al metal thickness ratio 1/5 compared to the other contacts indicated lower oxidation possibility and therefore superior quality ohmic contacts with the metal ratio 1/5. - Abstract: In this work, ohmic contacts were formed by varying the Ti/Al thickness ratio in the metal stack of Ti/Al/Ni/Au on Al{sub .28}Ga{sub .72}N/GaN HEMT epistructure followed by annealing in the temperature range 740–860 °C by rapid thermal processor (RTP). The contacts were electrically characterized for contact resistance (R{sub c}) and the sheet resistance (R{sub s}) of AlGaN/GaN epistructure. The ohmic contacts formed by Ti/Al metal thickness ratio of 1/5 exhibited lowest R{sub c} values and better surface morphology compared to the contacts formed by other Ti/Al metal thickness ratios. The difference observed in the electrical characterization of these contacts was correlated with their X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses. The surface morphology of the ohmic metal post annealing showed two distinct regions in scanning electron microscope (SEM) images. The energy dispersive X-ray analysis (EDAX) identified these regions as Ni–Al and Au–Al rich. Ni–Al rich region is believed to be responsible for rough morphology. Further, the contact formed with Ti/Al metal thickness ratio 1

  16. Extended Heat Deposition in Hot Jupiters: Application to Ohmic Heating

    CERN Document Server

    Ginzburg, Sivan

    2015-01-01

    Many giant exoplanets in close orbits have observed radii which exceed theoretical predictions. One suggested explanation for this discrepancy is heat deposited deep inside the atmospheres of these "hot Jupiters". Here, we study extended power sources which distribute heat from the photosphere to the deep interior of the planet. Our analytical treatment is a generalization of a previous analysis of localized "point sources". We model the deposition profile as a power law in the optical depth and find that planetary cooling and contraction halt when the internal luminosity (i.e. cooling rate) of the planet drops below the heat deposited in the planet's convective region. A slowdown in the evolutionary cooling prior to equilibrium is possible only for sources which do not extend to the planet's center. We estimate the Ohmic dissipation resulting from the interaction between the atmospheric winds and the planet's magnetic field, and apply our analytical model to Ohmically heated planets. Our model can account fo...

  17. Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements.

    Science.gov (United States)

    Murata, Masayuki; Hasegawa, Yasuhiro

    2013-09-26

    Ohmic contact electrodes for four-wire resistance and Hall measurements were fabricated on an individual single-crystal bismuth nanowire encapsulated in a cylindrical quartz template. Focused ion beam processing was utilized to expose the side surfaces of the bismuth nanowire in the template, and carbon and tungsten electrodes were deposited on the bismuth nanowire in situ to achieve electrical contacts. The temperature dependence of the four-wire resistance was successfully measured for the bismuth nanowire, and a difference between the resistivities of the two-wire and four-wire methods was observed. It was concluded that the two-wire method was unsuitable for estimation of the resistivity due to the influence of contact resistance, even if the magnitude of the bismuth nanowire resistance was greater than the kilo-ohm order. Furthermore, Hall measurement of a 4-μm-diameter bismuth microwire was also performed as a trial, and the evaluated temperature dependence of the carrier mobility was in agreement with that for bulk bismuth, which indicates that the carrier mobility was successfully measured using this technique. PACS: 81.07.Gf.

  18. Monster Sawtooth Activity in Ohmically Heated HT-7 Plasma

    Institute of Scientific and Technical Information of China (English)

    胡立群; 石跃江; 刘胜侠

    2001-01-01

    Experimental properties of monster sawtooth activities in ohmic HT-7 plasma are presented in this paper. The monster sawtooth activities belong to global fluctuations and are characterized with a series of large core collapses on SXR intensity traces with a long period, a large amplitude fluctuation and a large inversion radius. However, they emerge without apparent deterioration of plasma confinement and without major plasma disruption. During the events,long partial sawtooth collapses and abundant MHD phenomena are also observed.

  19. Compound sawtooth study in ohmically heated TFTR plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, H.; McGuire, K.; Colchin, D.; Efthimion, P.C.; Fredrickson, E.; Hill, K.; Kiraly, J.; Pare, V.; Taylor, G.; Sauthoff, N.

    1985-09-01

    Compound sawtooth activity has been observed in ohmically heated, high current, high density TFTR plasmas. Commonly called ''double sawteeth,'' such sequences consist of a repetitive series of subordinate relaxations followed by a main relaxation with a different inversion radius. The period of such compound sawteeth can be as long as 100 msec. In other cases, however, no compound sawteeth or bursts of them can be observed in discharges with essentially the same parameters.

  20. Observation of improved ohmic confinement in highly elongated TCV discharges

    Energy Technology Data Exchange (ETDEWEB)

    Nieswand, C.; Hofmann, F.; Behn, R.; Furno, I.; Moret, J.M.; Pietrzyk, Z.A.; Pochelon, A.; Reimerdes, H.; Weisen, H. [Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)

    1997-06-01

    The primary goals of the TCV tokamak are to produce plasmas with high elongation and to investigate confinement behaviour for a variety of plasma shapes. A spontaneous transition to an improved ohmic confinement regime has recently been observed in moderately and highly elongated discharges limited by the central column. The observed features are similar to those observed in ASDEX (IOC regime). (author) 5 tab., 5 refs.

  1. Nickel ohmic contacts of high-concentration P-implanted 4H-SiC

    Institute of Scientific and Technical Information of China (English)

    Liu Chunjuan; Liu Su; Feng Jingjing; Wu Rong

    2012-01-01

    Different-dose phosphorus ion implantation into 4H-SiC followed by high-temperature annealing was investigated.A1N/BN and graphite post-implantation annealing for ion-implanted SiC at 1650 ℃ for 30 min was conducted to electrically activate the implanted P+ ions.Ni contacts to the P+-implanted 4H-SiC layers were examined by transmission line model and Hall measurements fabricated on P-implanted (0001).The results indicated that a high-quality ohmic contact and specific contact resistivity of 1.30 × 10-6 Ω·cm2 was obtained for the P+-implanted 4H-SiC layers.The ρC values of the Ni-based implanted layers decreased with increasing P doping concentrations,and a weaker temperature dependence was observed for different samples in the 200-500 K temperature range.

  2. Nickel ohmic contacts of high-concentration P-implanted 4H-SiC

    Science.gov (United States)

    Chunjuan, Liu; Su, Liu; Jingjing, Feng; Rong, Wu

    2012-03-01

    Different-dose phosphorus ion implantation into 4H-SiC followed by high-temperature annealing was investigated. AlN/BN and graphite post-implantation annealing for ion-implanted SiC at 1650 °C for 30 min was conducted to electrically activate the implanted P+ ions. Ni contacts to the P+-implanted 4H-SiC layers were examined by transmission line model and Hall measurements fabricated on P-implanted (0001). The results indicated that a high-quality ohmic contact and specific contact resistivity of 1.30 × 10-6 Ω · cm2 was obtained for the P+-implanted 4H-SiC layers. The ρC values of the Ni-based implanted layers decreased with increasing P doping concentrations, and a weaker temperature dependence was observed for different samples in the 200-500 K temperature range.

  3. Ti/Al Ohmic Contacts to n-Type GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Gangfeng Ye

    2011-01-01

    Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

  4. Inactivation of Escherichia coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes in orange and tomato juice using ohmic heating.

    Science.gov (United States)

    Sagong, Hun-Gu; Park, Sang-Hyun; Choi, Young-Jin; Ryu, Sangryeol; Kang, Dong-Hyun

    2011-06-01

    The effects of ohmic heating on reduction of Escherichia coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes in orange and tomato juice were investigated. Orange and tomato juice inoculated with E. coli O157:H7, Salmonella Typhimurium, and L. monocytogenes were subjected to ohmic heating with selected parameters including electric field strength from 10 to 20 V/cm and treatment times from 0 to 540 s. The number of pathogens was reduced by increasing the electric field strength from 10 to 20 V/cm as well as increasing treatment time. The population of E. coli O157:H7 was reduced more than 5 log after 120, 210, and 540 s of treatment in orange juice with 20, 15, and 10 V/cm electric field strengths, respectively. In tomato juice, levels of E. coli O157:H7 were reduced more than 5 log after 90, 180, and 480 s with the same electric field strengths. Similar phenomena were observed for Salmonella Typhimurium and L. monocytogenes, but E. coli O157:H7 was the most resistant to ohmic heating treatment. These results show that ohmic heating is potentially useful for inactivation of E. coli O157:H7, Salmonella Typhimurium, and L. monocytogenes and that the effect of inactivation depends on applied electric field strength, treatment time, pathogen species, and type of juice.

  5. An explicit scheme for ohmic dissipation with smoothed particle magneto-hydrodynamics

    CERN Document Server

    Tsukamoto, Yusuke; Inutsuka, Shu-ichiro

    2013-01-01

    In this paper, we present an explicit scheme for Ohmic dissipation with smoothed particle magneto-hydrodynamics (SPMHD). We propose a SPH discretization of Ohmic dissipation and solve Ohmic dissipation part of induction equation with the supertime-stepping method (STS) which allows us to take a longer time-step than Courant-Friedrich-Levy stability condition. Our scheme is second-order accurate in space and first-order accurate in time. Our numerical experiments show that optimal choice of the parameters of STS for Ohmic dissipation of SPMHD is {\

  6. Non-ohmic behavior of metal-insulator granular thin films in low-field regime (eΔV ≪ kBT)

    Science.gov (United States)

    Boff, M. A. S.; Canto, B.; Mesquita, F.; Hinrichs, R.; Fraga, G. L. F.; Pereira, L. G.

    2016-10-01

    Non-ohmic behavior is not expected in metal-insulator granular systems in a low-field regime. There is no model to explain this behavior, even though it has been reported in several metal-insulator granular thin films (Fe-Al2O3, Co-Al2O3, and Ti-SiO2). In this paper, we show additional experimental results of Fe-SiO2 granular films and propose an explanation for the electrical properties of all above mentioned systems, based on Mott variable range hopping. The experimental results show that the localization length increases and the electrical resistance decreases with the increase of electrical potential or current. The non-ohmic behavior of the resistance and the increase of the localization length with increasing current are explained by the activation of new pathways for electrons in granular thin films that contain variable grain sizes and/or have different distances between grains.

  7. Annealing effects on electrical behavior of gold nanoparticle film: Conversion of ohmic to non-ohmic conductivity

    Science.gov (United States)

    Ebrahimpour, Zeinab; Mansour, Nastaran

    2017-02-01

    This paper reports on the electrical behavior of self-assembled gold nanoparticle films before and after high-temperature annealing in ambient environment. These films are made by depositing gold nanoparticles from a colloidal solution on glass substrates using centrifuge deposition technique. The current-voltage (I-V) characteristics of these films exhibits ohmic and non-ohmic properties for un-annealed and annealed films respectively. As the annealing time duration increases, the onset of non-ohmic behavior occurs at higher voltages. To understand the underlying mechanisms for the observed electrical conduction behavior in these films and how electrical conduction is effected by film morphology and structural properties before and after annealing, systematic comparative studies based on scanning electron microscopy (SEM), UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) have been performed. The morphology of the films shows that the assembled gold nanoparticles are distributed on the substrate in a random way before annealing. After 2 h annealing gold nanoparticles exhibit a higher filling fraction when examined by SEM, which means that they coalesce, upon annealing, with respect to un-annealed films. The UV-vis absorption spectra of the films show that there is a red-shift and broadening in the absorption band for the annealed films. The observed phenomenon is related to the plasmon near-field coupling effect and suggests that the nanoparticle ensembles interspacing has decreased. The structural and crystallinity of the films exhibit amorphous structure before annealing and pure crystalline phases with a preferential growth direction along the (111) plane after annealing. The XPS analysis further suggests the existence of the stable thin oxide layer in the phase of Au2O3 in the annealed films. The I-V characteristics have been described by Simmons' model for tunnel transport through metal-insulator-metal (MIM) junctions. The Fowler

  8. Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

    Science.gov (United States)

    Evans, Laura J.; Okojie, Robert S.; Lukco, Dorothy

    2011-01-01

    We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

  9. Transport and turbulence in TORE SUPRA ohmic discharges

    Energy Technology Data Exchange (ETDEWEB)

    Garbet, X.; Payan, J.; Laviron, C. (Association Euratom-CEA, Centre d' Etudes Nucleaires de Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee) (and others)

    1992-01-01

    The mechanisms underlying the energy confinement behaviour in ohmic tokamak discharges are not yet understood. It is well known that the confinement time increases with the average density and saturates above a critical value of the density, but several explanations exist for this saturation: the onset of ionic turbulence, an impurity content effect on Drift Trapped Electron Modes, or [eta][sub e] modes stabilization by the increase of [beta]. The present study is an analysis of a set of ohmic discharges in TORE SUPRA with I[sub p]=1.6 MA, B=4T, R=2.35 m and a=0.78 m, where the average density was increased from 0.9 to 4.2 10[sup 19] m[sup -3]. For these plasma parameters, the energy confinement time given by magnetic measurements saturates for [>=] 2.5 10[sup 19] m[sup -3]. It is emphasized here that the onset of ionic turbulence is unlikely in TORE SUPRA. This conclusion relies on transport analysis and turbulence measurements by CO[sub 2] laser scattering, whose results are presented in this paper. (author) 6 refs., 3 figs.

  10. Gate tunable graphene-silicon Ohmic/Schottky contacts

    Science.gov (United States)

    Chen, Chun-Chung; Chang, Chia-Chi; Li, Zhen; Levi, A. F. J.; Cronin, Stephen B.

    2012-11-01

    We show that the I-V characteristics of graphene-silicon junctions can be actively tuned from rectifying to Ohmic behavior by electrostatically doping the graphene with a polymer electrolyte gate. Under zero applied gate voltage, we observe rectifying I-V characteristics, demonstrating the formation of a Schottky junction at the graphene-silicon interface. Through appropriate gating, the Fermi energy of the graphene can be varied to match the conduction or valence band of silicon, thus forming Ohmic contacts with both n- and p-type silicon. Over the applied gate voltage range, the low bias conductance can be varied by more than three orders of magnitude. By varying the top gate voltage from -4 to +4 V, the Fermi energy of the graphene is shifted between -3.78 and -5.47 eV; a shift of ±0.85 eV from the charge neutrality point. Since the conduction and valence bands of the underlying silicon substrate lie within this range, at -4.01 and -5.13 eV, the Schottky barrier height and depletion width can be decreased to zero for both n- and p-type silicon under the appropriate top gating conditions. I-V characteristics taken under illumination show that the photo-induced current can be increased or decreased based on the graphene-silicon work function difference.

  11. THREE-DIMENSIONAL ATMOSPHERIC CIRCULATION MODELS OF HD 189733b AND HD 209458b WITH CONSISTENT MAGNETIC DRAG AND OHMIC DISSIPATION

    Energy Technology Data Exchange (ETDEWEB)

    Rauscher, Emily [Lunar and Planetary Laboratory, University of Arizona, 1629 East University Blvd., Tucson, AZ 85721 (United States); Menou, Kristen [Department of Astronomy, Columbia University, 550 West 120th St., New York, NY 10027 (United States)

    2013-02-10

    We present the first three-dimensional circulation models for extrasolar gas giant atmospheres with geometrically and energetically consistent treatments of magnetic drag and ohmic dissipation. Atmospheric resistivities are continuously updated and calculated directly from the flow structure, strongly coupling the magnetic effects with the circulation pattern. We model the hot Jupiters HD 189733b (T {sub eq} Almost-Equal-To 1200 K) and HD 209458b (T {sub eq} Almost-Equal-To 1500 K) and test planetary magnetic field strengths from 0 to 30 G. We find that even at B = 3 G the atmospheric structure and circulation of HD 209458b are strongly influenced by magnetic effects, while the cooler HD 189733b remains largely unaffected, even in the case of B = 30 G and super-solar metallicities. Our models of HD 209458b indicate that magnetic effects can substantially slow down atmospheric winds, change circulation and temperature patterns, and alter observable properties. These models establish that longitudinal and latitudinal hot spot offsets, day-night flux contrasts, and planetary radius inflation are interrelated diagnostics of the magnetic induction process occurring in the atmospheres of hot Jupiters and other similarly forced exoplanets. Most of the ohmic heating occurs high in the atmosphere and on the dayside of the planet, while the heating at depth is strongly dependent on the internal heat flux assumed for the planet, with more heating when the deep atmosphere is hot. We compare the ohmic power at depth in our models, and estimates of the ohmic dissipation in the bulk interior (from general scaling laws), to evolutionary models that constrain the amount of heating necessary to explain the inflated radius of HD 209458b. Our results suggest that deep ohmic heating can successfully inflate the radius of HD 209458b for planetary magnetic field strengths of B {>=} 3-10 G.

  12. Titanium nitride: A new Ohmic contact material for n-type CdS

    NARCIS (Netherlands)

    Didden, A.; Battjes, H.; Machunze, R.; Dam, B.; Van de Krol, R.

    2011-01-01

    In devices based on CdS, indium is often used to make Ohmic contacts. Since indium is scarce and expensive, suitable replacement materials need to be found. In this work, we show that sputtered titanium nitride forms an Ohmic contact with n-type CdS. The CdS films, deposited with chemical bath depos

  13. Protein removal from fish mince washwater using ohmic heating

    Directory of Open Access Journals (Sweden)

    Kobsak Kanjanapongkul

    2008-05-01

    Full Text Available A static ohmic heating system was developed to remove protein from fish mince (threadfin bream washwatercollected from a surimi production plant in order to improve water quality. The samples were heated under different electricfield strengths (EFS, 20, 25, and 30 V/cm until reaching the desired temperature (50, 60, and 70oC, and further held at thattemperature for a certain time (0, 15, and 30 minutes. Heating the samples to 70oC resulted in a better protein removal whencompared to 50 and 60oC. After heating to 70oC, the samples were centrifuged. The analysis of the supernatant obtained showsthe reduction of protein, COD, BOD, TS, and TDS to 42%, 25%, 23%, 44%, and 61%, respectively. The electrical conductivityof the samples showed a linear relationship with temperature and the temperature demonstrated a parabolic relationshipwith heating time. EFS and holding time have no significant effect on protein removal.

  14. Effect of Boronization on Ohmic Plasmas in NSTX

    Energy Technology Data Exchange (ETDEWEB)

    Skinner, C.H.; Kugel, H.; Maingi, R.; Wampler, W.R.; Blanchard, W.; Bell, M.; Bell, R.; LeBlanc, B.; Gates, D.; Kaye, S.; LaMarche, P.; Menard, J.; Mueller, D.; Na, H.K.; Nishino, N.; Paul, S.; Sabbagh, S.; Soukhanovskii, V.

    2001-03-27

    Boronization of the National Spherical Torus Experiment (NSTX) has enabled access to higher density, higher confinement plasmas. A glow discharge with 4 mTorr helium and 10% deuterated trimethyl boron deposited 1.7 g of boron on the plasma facing surfaces. Ion beam analysis of witness coupons showed a B+C areal density of 10 to the 18 (B+C) cm to the -2 corresponding to a film thickness of 100 nm. Subsequent ohmic discharges showed oxygen emission lines reduced by x15, carbon emission reduced by two and copper reduced to undetectable levels. After boronization, the plasma current flattop time increased by 70% enabling access to higher density, higher confinement plasmas.

  15. High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact

    Institute of Scientific and Technical Information of China (English)

    Zhang Lin; Zhang Yi-Men; Zhang Yu-Ming; Han Chao; Ma Yong-Ji

    2009-01-01

    The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were fabricated,and irradiated with 1 MeV electrons up to a dose of 3.43×1014 e/cm-2.After radiation,the forward currents of the SBDs at 2 V decreased by about 50%,and the reverse currents at -200 V increased by less than 30%.Schottky barrier height (φB) of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV under 0 V irradiation bias,and decreased from 1.25 eV to 1.19 eV under -30 V irradiation bias.The degradation of φB could be explained by the variation of interface states of Schottky contacts.The on-state resistance (Rs) and the reverse current increased with the dose,which can be ascribed to the radiation defects in bulk material.The specific contact resistance (ρc) of

  16. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Smith, M. D.; Parbrook, P. J., E-mail: peter.parbrook@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland); School of Engineering, University College Cork, Cork T12 YN60 (Ireland); O' Mahony, D. [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland); Conroy, M.; Schmidt, M. [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland); Department of Chemistry, University College Cork, Cork T12 YN60 (Ireland)

    2015-09-14

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion.

  17. Coupled evolutions of the stellar obliquity, orbital distance, and planet's radius due to the Ohmic dissipation induced in a diamagnetic hot Jupiter around a magnetic T Tauri star

    CERN Document Server

    Chang, Yu-Ling; Gu, Pin-Gao

    2012-01-01

    We revisit the calculation of the Ohmic dissipation in a hot Jupiter presented in Laine et al. (2008) by considering more realistic interior structures, stellar obliquity, and the resulting orbital evolution. In this simplified approach, the young hot Jupiter of one Jupiter mass is modelled as a diamagnetic sphere with a finite resistivity, orbiting across tilted stellar magnetic dipole fields in vacuum. Since the induced Ohmic dissipation occurs mostly near the planet's surface, we find that the dissipation is unable to significantly expand the young hot Jupiter. Nevertheless, the planet inside a small co-rotation orbital radius can undergo orbital decay by the dissipation torque and finally overfill its Roche lobe during the T Tauri star phase. The stellar obliquity can evolve significantly if the magnetic dipole is parallel/anti-parallel to the stellar spin. Our results are validated by the general torque-dissipation relation in the presence of the stellar obliquity. We also run the fiducial model in Laine...

  18. High-Temperature Characteristics of Ti/A1/Ni/Au Ohmic Contacts to n-GaN

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yue-Zong; FENG Shi-Wei; GUO Chun-Sheng; ZHANG Guang-Chen; ZHUANG Si-Xiang; SU Rong; BAI Yun-Xia; LU Chang-Zhi

    2008-01-01

    We present the high-temperature characteristics of Ti/Al/Ni/Au(15 nm/220 nm/40nm/50nm) multiplayer contacts to n-type GaN (Nd = 3.7 × 1017 cm-3, Nd = 3.0 × 10l8 cm-3). The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the Al layer even the Ti layer.

  19. Decoherence plus spontaneous symmetry breakdown generate the ``ohmic`` view of the state-vector collapse

    Energy Technology Data Exchange (ETDEWEB)

    Ne`eman, Y. [Tel-Aviv Univ. (Israel). Beverly and Raymond Sackler Faculty of Exact Sciences]|[Univ. of Texas, Austin, TX (United States). Center for Particle Physics

    1993-06-01

    The collapse of the state-vector is described as a phase transition due to three features. First, there is the atrophying of indeterminacy for macroscopic objects -- including the measurement apparatus. Secondly, there is the environment decohering mechanism, as described by Zeh, Joos and others -- dominant in macroscopic objects. As a result, the classical background, an input in the Copenhagen prescriptions, is generated as an ``effective`` picture, similar to the ``effective`` introduction of Ohmic resistance or of thermodynamical variables, when going from the micro to the macroscopic; in this case, the collectivized substrate is provided by the multiplicity of photon scatterings, etc., on top of the effect of the large number of particles in macroscopic objects. Thirdly, there is the Everett ``branching``, i.e. the materialization of one of the now decoherent states, accompanied by the destruction of the other branches. By definition, quantum indeterminancy represents a symmetry; in a measurement, or in a branching, this symmetry is broken ``spontaneously``, involving a Ginzburg-Landau type potential with asymmetric minima, thus concretizing the quantum ``dice`` without the burden of ``many worlds``. The authors review and systematize the various phase transitions relating quantum to classical phenomena.

  20. Ohmic contacts of Au and Ag metals to n-type GdN thin films

    Directory of Open Access Journals (Sweden)

    Felicia Ullstad

    2015-05-01

    Full Text Available The rare-earth nitrides appear as attractive alternatives to dilute ferromagnetic semiconductors for spintronics device applications. Most of them combine the properties of the ferromagnet and the semiconductor, an exceedingly rare combination. In this work we have grown n-type polycrystalline semiconducting GdN layers between pre-deposited contacts made of Cr/Au and Cr/Ag. The resistivity of the GdN layers ranges from 4.4×10-4 Ωcm to 3.1×10-2 Ωcm depending on the nitrogen pressure during the growth. The electrical properties of metal/n-type GdN/metal planar junctions are investigated as a function of the temperature. The current voltage characteristics of the junctions were linear for temperatures ranging from 300 K down to 5 K, suggesting an ohmic contact between the Au or Ag metal and the n-type GdN layer.

  1. Influence of Ohmic Heating on Advection-Dominated Accretion Flows

    CERN Document Server

    Bisnovatyi-Kogan, G S

    1997-01-01

    Advection-dominated, high-temperature, quasi-spherical accretion flow onto a compact object of mass M, recently considered by a number of authors, assume that the dissipation of turbulent energy of the flow heats the ions and that a constant fraction f of the dissipated energy is advected inward. It is suggested that the efficiency of conversion of accretion energy to radiation can be very much smaller than unity. However, it is likely that the flows have an equipartition magnetic field with the result that dissipation of magnetic energy at a rate comparable to that for the turbulence must occur by Ohmic heating. We argue that this heating occurs as a result of plasma instabilities and that the relevant instabilities are current driven in response to the strong electric fields parallel to the magnetic field. We argue further that these instabilities heat predominantly the electrons. We analyze a model for the radial dependence of the ion and electron temperatures of a general, possibly quasi-spherical accreti...

  2. Turbulence and energy confinement in TORE SUPRA ohmic discharges

    Energy Technology Data Exchange (ETDEWEB)

    Garbet, X.; Payan, J.; Laviron, C.; Devynck, P.; Saha, S.K.; Capes, H.; Chen, X.P.; Coulon, J.P.; Gil, C.; Harris, G.; Hutter, T.; Pecquet, A.L. [Association Euratom-CEA, Centre d`Etudes de Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee; Truc, A.; Hennequin, P.; Gervais, F.; Quemeneur, A. [Ecole Polytechnique, 91 - Palaiseau (France)

    1992-06-01

    Results on confinement and turbulence from a set of ohmic discharges in Tore Supra are discussed. The attention is focused on the saturation of the energy confinement time and it is emphasized that this saturation could be explained by a saturation of the electron heat diffusivity. Ion behaviour is indeed governed by dilution and equipartition effects. Although the ion heat transport is never neoclassical, there is no enhanced degradation at the saturation. This behaviour is confirmed by turbulence measurements given by CO{sub 2} laser coherent scattering. The density fluctuations level follows the electron heat diffusivity variations with the average density. Waves propagating in the ion diamagnetic direction are always present in turbulence frequency spectra. Thus, the saturation cannot be explained by the onset of an ion turbulence. The existence of an ion turbulence at the edge at all densities cannot be excluded. However, this ion feature in scattering spectra could be explained by a Doppler shift associated to an inversion point of the radial electric field at the edge.

  3. Sawtooth Activity in Ohmically Heated Plasma on HT-7 Tokamak

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Sawtooth activity on HT-7 tokamak has been investigated experimentally mainly by using soft x-ray diode array and magnetic probes. Their behaviors and occurrences are correlatedclosely to the discharge conditions: the electron density Ne, the electron temperature Te, the safetyfactor qa on plasma boundary and wall condition etc. When central line-averaged electron densityNe(0) is over 2.0×1013cm-3, major sawtooth activity emerges with a period of up to 6.5 ms and afluctuation amplitude of up to 2~30 % of SXR radiation signal. In some cases such as the safetyfactor between 4.2~4.7 and Zeff=3.0~6.0, a monster sawtooth activity often emerges withoutapparent deterioration of plasma confinement and without major disruption. During these events,abundant MHD phenomena are observed including partial sawtooth oscillations. In this paper, theobserved sawtooth behaviors and their dependence on the and their dependence density Ne andwall condition in ohmically heated plasma are introduced, the results are discussed and presented.

  4. The Influence of Atmospheric Scattering and Absorption on Ohmic Dissipation in Hot Jupiters

    CERN Document Server

    Heng, Kevin

    2012-01-01

    Using semi-analytical, one-dimensional models, we elucidate the influence of scattering and absorption on the degree of Ohmic dissipation in hot Jovian atmospheres. With the assumption of Saha equilibrium, the variation in temperature is the main driver of the variations in the electrical conductivity, induced current and Ohmic power dissipated. Atmospheres possessing temperature inversions tend to dissipate most of the Ohmic power superficially, at high altitudes, whereas those without temperature inversions are capable of greater dissipation deeper down. Scattering in the optical range of wavelengths tends to cool the lower atmosphere, thus reducing the degree of dissipation at depth. Purely absorbing cloud decks (in the infrared), of a finite extent in height, allow for localized reductions in dissipation and may reverse a temperature inversion if they are dense and thick enough, thus greatly enhancing the dissipation at depth. If Ohmic dissipation is the mechanism for inflating hot Jupiters, then variatio...

  5. Optimization of ohmic heating applications for pectin methylesterase inactivation in orange juice

    National Research Council Canada - National Science Library

    Demirdöven, Aslıhan; Baysal, Taner

    Ohmic heating (OH) which is among to electro-thermal methods and helps to inactivate microorganisms and enzymes was used in this study as thermal treatment on orange juice production for pectin methylesterase (PME) inactivation...

  6. TiAl Ohmic contact on GaN, in situ high or low doped or Si implanted, epitaxially grown on sapphire or silicon

    Energy Technology Data Exchange (ETDEWEB)

    Cayrel, F.; Menard, O.; Alquier, D. [Laboratoire de Microelectronique de Puissance, Universite de Tours (France); Yvon, A.; Collard, E. [STMicroelectronics, Tours (France); Thierry-Jebali, N.; Brylinsky, C. [Laboratoire des Multimateriaux et Interfaces, Universite Claude Bernard Lyon1, Lyon (France)

    2012-06-15

    In this work, the Ti/Al Ohmic contact quality on n-type gallium nitride (GaN) films has been studied as a function of different process parameters such as surface cleaning procedure, etching, thickness of the deposited layers or annealing conditions. GaN epilayers, with uniform doping concentration from 1 x 10{sup 16} to 5.8 x 10{sup 18} at./cm{sup 3} were grown on sapphire or silicon substrates using AlN and/or AlGaN buffer layers. Electrical characterizations were made using circular transfer length method (cTLM) patterns with a four-probe equipment. Specific contact resistance (SCR) was then extracted from current-voltage (I-V) characteristics, for all the process conditions. Contact structures depending on experiment parameters were studied by means of (scanning) transmission electronic microscopy (STEM-TEM). Our results reveal that process parameters such as surface treatment have a lower impact than annealing temperature or metal thickness and annealing duration. Finally, SCR values of 1 x 10{sup -6} {omega} cm{sup 2} can be reproducibly achieved. Moreover, good Ohmic contacts have been obtained on etched surfaces or on low-doped layers implanted with Si. This low value demonstrates a good Ohmic contact and this large parameter process window is of high interest for future device fabrication based on GaN (planar or mesa structures). (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Coupled Evolutions of the Stellar Obliquity, Orbital Distance, and Planet's Radius due to the Ohmic Dissipation Induced in a Diamagnetic Hot Jupiter around a Magnetic T Tauri Star

    Science.gov (United States)

    Chang, Yu-Ling; Bodenheimer, Peter H.; Gu, Pin-Gao

    2012-10-01

    We revisit the calculation of the ohmic dissipation in a hot Jupiter presented by Laine et al. by considering more realistic interior structures, stellar obliquity, and the resulting orbital evolution. In this simplified approach, the young hot Jupiter of one Jupiter mass is modeled as a diamagnetic sphere with a finite resistivity, orbiting across tilted stellar magnetic dipole fields in vacuum. Since the induced ohmic dissipation occurs mostly near the planet's surface, we find that the dissipation is unable to significantly expand the young hot Jupiter. Nevertheless, the planet inside a small corotation orbital radius can undergo orbital decay by the dissipation torque and finally overfill its Roche lobe during the T Tauri star phase. The stellar obliquity can evolve significantly if the magnetic dipole is parallel/antiparallel to the stellar spin. Our results are validated by the general torque-dissipation relation in the presence of the stellar obliquity. We also run the fiducial model of Laine et al. and find that the planet's radius is sustained at a nearly constant value by the ohmic heating, rather than being thermally expanded to the Roche radius as suggested by the authors.

  8. Ohmic heating as a pre-treatment in solvent extraction of rice bran.

    Science.gov (United States)

    Nair, Gopu Raveendran; Divya, V R; Prasannan, Liji; Habeeba, V; Prince, M V; Raghavan, G S V

    2014-10-01

    Rice bran, which is one of the major by products of paddy contain high quality proteins and edible oil apart from fibre, ash and NFE (nitrogen free extract). The existing solvent extraction method employs n-hexane as the most viable solvent for the extraction of oil from rice bran. But the high cost and scarce availability of n-hexane resulted in uneconomical extraction of rice bran oil. In this study, rice bran was ohmically heated for different time periods(1, 2 and 3 min) with different current values (5, 15 and 20 A) and with different concentration of sodium chloride (1 M, 0.1 M and 0.01 M) as conducting medium. The ohmically heated rice bran was subjected to extraction studies. Ohmic heating of rice bran of paddy varieties Red Triveni and Basmati reduced the extraction time by nearly 75 % and 70 % respectively and gave a maximum quantity of oil extracted when compared to bran, which was not ohmically heated. From the experiments with varying concentrations, residence time of ohmic heating and currents, it was found that ohmically heating the rice bran with 1 M sodium chloride solution and with a current value of 20 A for 3 min gave maximum oil extraction with minimum extraction time.

  9. Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions

    Energy Technology Data Exchange (ETDEWEB)

    Kassamakova, L.; Kakanakov, R. [Inst. of Appl. Phys., Plovdiv (Bulgaria). BAS; Nordell, N.; Savage, S. [Industrial Microelectronics Center, Kista (Sweden); Kakanakova-Georgieva, A.; Marinova, Ts. [Inst. of General and Inorganic Chemistry, BAS, Sofia (Bulgaria)

    1999-07-30

    The electrical and chemical properties of Pd ohmic contacts to p-type 4H-SiC, together with their thermal stability, have been studied in the annealing temperature range 600 - 700 C. The ohmic behaviour of as-deposited and annealed contacts has been checked from I - V characteristics and the contact resistivity has been determined by the linear TLM method in order to determine the electrical properties and the thermal stability. An ohmic behaviour was established after annealing at 600 C, while the lowest contact resistivity 5.5 x 10{sup -5} {omega}cm{sup 2} was obtained at 700 C. The contact structure, before and after annealing, was investigated using X-ray photoelectron spectroscopy depth analysis. As-deposited Pd films form an abrupt and chemically inert Pd/SiC interface. Annealing causes the formation of palladium silicide. After formation at 600 C the contact structure consists of unreacted Pd and Pd{sub 3}Si. During annealing at 700 C. Pd and SiC react completely and a mixture of Pd{sub 3}Si, Pd{sub 2}Si and C in a graphite state is found in the contact layer. The examination of the thermal stability shows that after a 100 h heating at 500 C, only the contacts annealed at 700 C did not suffer from a change in resistivity. This can be explained by a more complete reaction between the Pd contact layer and the SiC substrate at this higher annealing temperature. (orig.)

  10. Influence of surface processing in a BCl3 plasma on the formation of ohmic contacts to AlGaN/GaN structures

    Science.gov (United States)

    Andrianov, N. A.; Kobelev, A. A.; Smirnov, A. S.; Barsukov, Yu. V.; Zhukov, Yu. M.

    2017-03-01

    Conditions for the surface processing of a cap GaN layer in AlGaN/GaN high-electron-mobility transistor (HEMT) structures in a BCl3 plasma have been found. They make it possible to considerably reduce the resistance of ohmic contacts to Group III nitride-based field-effect transistors. The primary factor behind this effect is the noticeable lowering of a potential barrier on the GaN surface through the formation of nitrogen vacancies that act as donors and, correspondingly, a rise in the surface concentration of electrons.

  11. Apple snack enriched with L-arginine using vacuum impregnation/ohmic heating technology.

    Science.gov (United States)

    Moreno, Jorge; Echeverria, Julian; Silva, Andrea; Escudero, Andrea; Petzold, Guillermo; Mella, Karla; Escudero, Carlos

    2017-07-01

    Modern life has created a high demand for functional food, and in this context, emerging technologies such as vacuum impregnation and ohmic heating have been applied to generate functional foods. The aim of this research was to enrich the content of the semi-essential amino acid L-arginine in apple cubes using vacuum impregnation, conventional heating, and ohmic heating. Additionally, combined vacuum impregnation/conventional heating and vacuum impregnation/ohmic heating treatments were evaluated. The above treatments were applied at 30, 40 and 50  ℃ and combined with air-drying at 40 ℃ in order to obtain an apple snack rich in L-arginine. Both the impregnation kinetics of L-arginine and sample color were evaluated. The impregnated samples created using vacuum impregnation/ohmic heating at 50 ℃ presented a high content of L-arginine, an effect attributed primarily to electropermeabilization. Overall, vacuum impregnation/ohmic heating treatment at 50 ℃, followed by drying at 40 ℃, was the best process for obtaining an apple snack rich in L-arginine.

  12. Comparative effects of ohmic, induction cooker, and electric stove heating on soymilk trypsin inhibitor inactivation.

    Science.gov (United States)

    Lu, Lu; Zhao, Luping; Zhang, Caimeng; Kong, Xiangzhen; Hua, Yufei; Chen, Yeming

    2015-03-01

    During thermal treatment of soymilk, a rapid incorporation of Kunitz trypsin inhibitor (KTI) into protein aggregates by covalent (disulfide bond, SS) and/or noncovalent interactions with other proteins is responsible for its fast inactivation of trypsin inhibitor activity (TIA). In contrast, the slow cleavage of a single Bowman-Birk inhibitor (BBI) peptide bond is responsible for its slow inactivation of TIA and chymotrypsin inhibitor activity (CIA). In this study, the effects of Ohmic heating (220 V, 50 Hz) on soymilk TIA and CIA inactivation were examined and compared to induction cooker and electric stove heating with similar thermal histories. It was found that: (1) TIA and CIA inactivation was slower from 0 to 3 min, and faster after 3 min as compared to induction cooker and electric stove. (2) The thiol (SH) loss rate was slower from 0 to 3 min, and similar to induction cooker and electric stove after 3 min. (3) Ohmic heating slightly increased protein aggregate formation. (4) In addition to the cleavage of one BBI peptide bond, an additional reaction might occur to enhance BBI inactivation. (5) Ohmic heating was more energy-efficient for TIA and CIA inactivation. (6) TIA and CIA inactivation was accelerated with increasing electric voltage (110, 165, and 220 V) of Ohmic heating. It is likely that the enhanced inactivation of TIA by Ohmic heating is due to its combined electrochemical and thermal effects.

  13. Effect of ohmic heating processing conditions on color stability of fungal pigments.

    Science.gov (United States)

    Aguilar-Machado, Diederich; Morales-Oyervides, Lourdes; Contreras-Esquivel, Juan C; Aguilar, Cristóbal; Méndez-Zavala, Alejandro; Raso, Javier; Montañez, Julio

    2017-01-01

    The aim of this work was to analyze the effect of ohmic heating processing conditions on the color stability of a red pigment extract produced by Penicillium purpurogenum GH2 suspended in a buffer solution (pH 6) and in a beverage model system (pH 4). Color stability of pigmented extract was evaluated in the range of 60-90 ℃. The degradation pattern of pigments was well described by the first-order (fractional conversion) and Bigelow model. Degradation rate constants ranged between 0.009 and 0.088 min(-1) in systems evaluated. Significant differences in the rate constant values of the ohmic heating-treated samples in comparison with conventional thermal treatment suggested a possible effect of the oscillating electric field generated during ohmic heating. The thermodynamic analysis also indicated differences in the color degradation mechanism during ohmic heating specifically when the pigment was suspended in the beverage model system. In general, red pigments produced by P. purpurogenum GH2 presented good thermal stability under the range of the evaluated experimental conditions, showing potential future applications in pasteurized food matrices using ohmic heating treatment.

  14. An investigation on the application of ohmic heating of cold water shrimp and brine mixtures

    DEFF Research Database (Denmark)

    Pedersen, Søren Juhl; Feyissa, Aberham Hailu; Brøkner Kavli, Sissel Therese

    2016-01-01

    Cooking is an important unit-operation in the production of cooked and peeled shrimps. The present study explores the feasibility of using ohmic heating for cooking of shrimps. The focus is on investigating the effects of different process parameters on heating time and quality of ohmic cooked...... shrimps (Pandalus Borelias). The shrimps were heated to a core temperature of 72 °C in a brine solution using a small batch ohmic heater. Three experiments were performed: 1) a comparative analyses of the temperature development between different sizes of shrimps and thickness (head and tail region...... of the shrimp) over varying salt concentrations (10 kg m−3 to 20 kg m−3) and electric field strengths (1150 V m−1 to 1725 V m−1) with the heating time as the response; 2) a 2 level factorial experiment for screening the impact of processing conditions using electric field strengths of 1250 V m−1 and 1580 V m−1...

  15. Thanatology in Protoplanetary Discs: the combined influence of Ohmic, Hall, and ambipolar diffusion on dead zones

    CERN Document Server

    Lesur, Geoffroy; Fromang, Sebastien

    2014-01-01

    Protoplanetary discs are poorly ionised due to their low temperatures and high column densities, and are therefore subject to three "non-ideal" magnetohydrodynamic effects: Ohmic dissipation, ambipolar diffusion, and the Hall effect. The existence of magnetically driven turbulence in these discs has been a central question since the discovery of the magnetorotational instability. Early models considered Ohmic diffusion only and led to a scenario of layered accretion, in which a magnetically "dead" zone in the disc midplane is embedded within magnetically "active" surface layers at distances ~1-10 au from the central protostellar object. Recent work has suggested that a combination of Ohmic dissipation and ambipolar diffusion can render both the midplane and surface layers of the disc inactive and that torques due to magnetically driven outflows are required to explain the observed accretion rates. We reassess this picture by performing three-dimensional numerical simulations that include, for the first time, ...

  16. Equilibrium and Nonequilibrium Dynamics of the Sub-Ohmic Spin-Boson Model

    Science.gov (United States)

    Anders, Frithjof B.; Bulla, Ralf; Vojta, Matthias

    2007-05-01

    Employing the nonperturbative numerical renormalization group method, we study the dynamics of the spin-boson model, which describes a two-level system coupled to a bosonic bath with a spectral density J(ω)∝ωs. We show that, in contrast with the case of Ohmic damping, the delocalized phase of the sub-Ohmic model cannot be characterized by a single energy scale only, due to the presence of a nontrivial quantum phase transition. In the strongly sub-Ohmic regime, s≪1, weakly damped coherent oscillations on short time scales are possible even in the localized phase—this is of crucial relevance, e.g., for qubits subject to electromagnetic noise.

  17. Experimental Phenomena of Improved Ohmic Confinement Induced by Modulated Toroidal Current on the HT-7 Tokamak

    Institute of Scientific and Technical Information of China (English)

    毛剑珊; 罗家融; P.Phillips; 赵君煜; 揭银先; 吴振伟; 胡立群; 李建刚

    2002-01-01

    The phenomena of improved ohmic confinement have been observed during the modulation of the toroidal curranton the Hefei superconducting Tokamak-7 (HT-7). In the experiment, the programming ohmic heating field wasmodulated. A toroidal frequency-modulated current induced by modulated loop voltage was added on the plasmaequilibrium current. The ratio of ac amplitude of the plasma current to the main plasma current is about 12-30%.These improved plasma confinement phenomena include the facts that the average electron density and the centralelectron temperature both increase, the Dα radiation from the edge is reduced, the magnetohydrodynamics isobviously suppressed by oscillating plasma current, eand the global energy confinement time increases by 27-45%o.It is found that the faster the modulation is, the more effective the improved ohmic confinement phase.

  18. Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

    Directory of Open Access Journals (Sweden)

    Polley Craig

    2011-01-01

    Full Text Available Abstract We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field.

  19. Effect of ohmic heating of soymilk on urease inactivation and kinetic analysis in holding time.

    Science.gov (United States)

    Li, Fa-De; Chen, Chen; Ren, Jie; Wang, Ranran; Wu, Peng

    2015-02-01

    To verify the effect of the ohmic heating on the urease activity in the soymilk, the ohmic heating methods with the different electrical field conditions (the frequency and the voltage ranging from 50 to 10 kHz and from 160 to 220 V, respectively) were employed. The results showed that if the value of the urease activity measured with the quantitative spectrophotometry method was lower than 16.8 IU, the urease activity measured with the qualitative method was negative. The urease activity of the sample ohmically heated was significantly lower than that of the sample conventionally heated (P heating method. Therefore, the electric field had no effect on the inactivation of the thermostable isoenzyme of the urease.

  20. Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

    Directory of Open Access Journals (Sweden)

    Ye Tian

    2012-03-01

    Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

  1. Failure Behaviors and Mechanisms of High-Ohmic Resistors Protected by PF/EP Paint in Heat and Humid Environment

    Institute of Scientific and Technical Information of China (English)

    王秀宇; 程强; 马小品; 张浩; 李明秀; 陈同宁; 张平; 李志珣

    2016-01-01

    Phenolic formaldehyde(PF)and epoxy(EP)resins are commonly used in electronic packaging. In this paper, high-ohmic resistors(2.2 MΩ,±0.5%,)with Cr-Si film were coated by PF/EP paint, and the resulting coated resistors were used for heat and humid(HH)experiments. The experimental results show that the corrosion of band-like resistive films is selective and isotropic, and that the corrosion spots in resistive films all form along grooves and extend in the same direction. It is revealed that OH-ions are generated due to the electrochemical reactions of resistive film in HH experiments, so a NaOH aqueous solution with pH about 10 was used to study the effects of absorbed water and OH-ions on PF/EP polymer film. The results indicates that the color of some part on PF/EP polymer film changes due to corrosion, and that the corrosion part of the polymer film is easy to be peeled off. It can be inferred that OH-ions generated in HH experiments may play a catalytic role in the chemical reactions between polymer film and the absorbed water, which accelerates the degradation of PF/EP protection film for a resistor.

  2. A variational surface hopping algorithm for the sub-Ohmic spin-boson model

    CERN Document Server

    Yao, Yao

    2013-01-01

    The Davydov D1 ansatz, which assigns an individual bosonic trajectory to each spin state, is an efficient, yet extremely accurate trial state for time-dependent variation of the the sub-Ohmic spin-boson model [J. Chem. Phys. 138, 084111 (2013)]. A surface hopping algorithm is developed employing the Davydov D1 ansatz to study the spin dynamics with a sub-Ohmic bosonic bath. The algorithm takes into account both coherent and incoherent dynamics of the population evolution in a unified manner, and compared with semiclassical surface hopping algorithms, hopping rates calculated in this work follow more closely the Marcus formula.

  3. Modeling ohmic heating in the drying zone of the plasma shaft electric furnace, when recycling the technogenic waste

    Science.gov (United States)

    Aliferov, A. I.; Anshakov, A. S.; Sinitsyn, V. A.; Domarov, P. V.; Danilenko, A. A.

    2016-10-01

    Efficient use of ohmic heating in the drying zone of the plasma shaft furnace for gasification of organic and technogenic wastes is studied. It is shown that by using ohmic heating in the drying zone, energy release takes place in the filling along the entire zone.

  4. A new method for the compensation of ohmic drop in galvanic cells

    NARCIS (Netherlands)

    Kooijman, D.J.; Sluyters, J.H.

    1966-01-01

    Generally the ohmic potential drop in a galvanic cell that occurs if a rectangular pulse is led through the cell, is compensated by means of a well-known bridge circuit. A better method making use of a phase reverter is described and its features are discussed. Exchange current densities up to 1200

  5. Combined effect of ohmic heating and enzyme assisted aqueous extraction process on soy oil recovery.

    Science.gov (United States)

    Pare, Akash; Nema, Anurag; Singh, V K; Mandhyan, B L

    2014-08-01

    This research describes a new technological process for soybean oil extraction. The process deals with the combined effect of ohmic heating and enzyme assisted aqueous oil extraction process (EAEP) on enhancement of oil recovery from soybean seed. The experimental process consisted of following basic steps, namely, dehulling, wet grinding, enzymatic treatment, ohmic heating, aqueous extraction and centrifugation. The effect of ohmic heating parameters namely electric field strength (EFS), end point temperature (EPT) and holding time (HT) on aqueous oil extraction process were investigated. Three levels of electric field strength (i.e. OH600V, OH750V and OH900V), 3 levels of end point temperature (i.e. 70, 80 and 90 °C) and 3 levels of holding time (i.e. 0, 5 and 10 min.) were taken as independent variables using full factorial design. Percentage oil recovery from soybean by EAEP alone and EAEP coupled with ohmic heating were 53.12 % and 56.86 % to 73 % respectively. The maximum oil recovery (73 %) was obtained when the sample was heated and maintained at 90 °C using electric field strength of OH600V for a holding time of 10 min. The free fatty acid (FFA) of the extracted oil (i.e. in range of 0.97 to 1.29 %) was within the acceptable limit of 3 % (oleic acid) and 0.5-3 % prescribed respectively by PFA and BIS.

  6. Ohmic Heating and Viscous Dissipation Effects over a Vertical Plate in the Presence of Porous Medium

    Directory of Open Access Journals (Sweden)

    LOGANATHAN PARASURAM

    2016-01-01

    Full Text Available An analysis is performed to investigate the ohmic heating and viscous dissipation effects on an unsteady natural convective flow over an impulsively started vertical plate in the presence of porous medium with radiation and chemical reaction. Numerical solutions for the governing boundary layer equations are presented by finite difference scheme of the Crank Nicolson type. The influence of various parameters on the velocity, the temperature, the concentration, the skin friction, the Nusselt number and the Sherwood number are discussed. It is observed that velocity and temperature increases with increasing values of permeability and increasing values of Eckert number, whereas it decreases with increasing values of magnetic parameter. An increase in ohmic heating and viscous heating increases the velocity boundary layer. An increase in ohmic heating decreases the temperature. An increase in magnetic field reduces the temperature profile. The velocity profile is highly influenced by the increasing values of permeability. It is observed that permeability has strong effect on velocity. An enhancement in ohmic heating increases the shear stress, decreases the rate of heat transfer and induces the rate of mass transfer.

  7. Structural and electrical characterization of ohmic contacts to graphitized silicon carbide.

    Science.gov (United States)

    Maneshian, Mohammad H; Lin, Ming-Te; Diercks, David; Shepherd, Nigel D

    2009-12-09

    Titanium was deposited onto silicon carbide (6H-SiC) using the 248 nm line of an excimer laser in a vacuum of 10(-6) Torr, and ohmic contacts were formed by annealing the structure at approximately 1000 degrees C. Further anneals between 1350 and 1430 degrees C did not degrade the formed contacts, and Raman analysis confirmed that sublimation of silicon from the near surface layers of the silicon carbide between the contact pads resulted in graphene formation after 5 min, 1428 degrees C anneals. The graphene formation was accompanied by a significant enhancement of ohmic behavior, and, it was found to be sensitive to the temperature ramp-up rate and annealing time. High-resolution transmission electron microscopy showed that the interface between the metal and silicon carbide remained sharp and free of macroscopic defects even after 30 min, 1430 degrees C anneals. The interface was determined to be carbon rich by elemental analysis, which indicates metal carbide formation. The potential of this approach for achieving ohmic contacts and graphene formation on silicon carbide substrates is discussed. A mechanism for the sequential formation of ohmic contacts then graphene is proposed.

  8. A new method for the compensation of ohmic drop in galvanic cells

    NARCIS (Netherlands)

    Kooijman, D.J.; Sluyters, J.H.

    Generally the ohmic potential drop in a galvanic cell that occurs if a rectangular pulse is led through the cell, is compensated by means of a well-known bridge circuit. A better method making use of a phase reverter is described and its features are discussed. Exchange current densities up to 1200

  9. Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or phosphorus implantation

    Energy Technology Data Exchange (ETDEWEB)

    Bazin, A.E., E-mail: anne-elisabeth.bazin@st.com [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Michaud, J.F. [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Autret-Lambert, C. [Universite Francois Rabelais, Tours, Laboratoire d' Electrodynamique des Materiaux Avances CNRS-CEA-UMR6157, Parc de Grandmont, 37200 Tours (France); Cayrel, F. [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP 267, 73375 Le Bourget du Lac Cedex (France); Portail, M. [Centre de Recherche sur l' Hetero-Epitaxie et ses Applications CNRS-UPR10, Rue Bernard Gregory, 06560 Valbonne (France); Zielinski, M. [NOVASiC, Savoie Technolac, Arche Bat 4, BP 267, 73375 Le Bourget du Lac Cedex (France); Collard, E. [STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Alquier, D. [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)

    2010-07-25

    For electronic devices, good ohmic contacts are required. To achieve such contacts, the semiconductor layer has to be highly doped. The only method available to locally dope the SiC is to implant dopants in the epilayer through a mask. In this work, non-intentionally doped 3C-SiC epilayers were implanted using nitrogen or phosphorus at different energies and subsequently annealed at temperatures between 1150 deg. C and 1350 deg. C in order to form n{sup +} implanted layers. Different techniques such as Fourier Transformed InfraRed spectroscopy (FTIR), Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM) were used to characterize implanted 3C-SiC epilayers subsequently to the different annealing steps. Then, Ti-Ni contacts were carried out and the specific contact resistance ({rho}{sub C}) was determined by using circular Transfer Length Method (c-TLM) patterns. {rho}{sub C} values were investigated as a function of implanted species and contact annealing conditions, and compared to those obtained for highly doped 3C-SiC epilayers. As expected, {rho}{sub C} value is highly sensitive to post-implantation annealing. This work demonstrates that low resistance values can be achieved using nitrogen or phosphorus implantation at room temperature hence enabling device processing.

  10. Effects of cap layer on ohmic Ti/Al contacts to Si{sup +} implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Placidi, Marcel, E-mail: marcel.placidi@cnm.es [Centre Nacional de Microelectronica (IMB-CNM-CSIC), Campus UAB, System Integration, 08193 Barcelona (Spain); Perez-Tomas, A.; Constant, A.; Rius, G. [Centre Nacional de Microelectronica (IMB-CNM-CSIC), Campus UAB, System Integration, 08193 Barcelona (Spain); Mestres, N. [Institut de Ciencia de Materials (ICMAB-CSIC), Campus UAB, 08193 Barcelona (Spain); Millan, J.; Godignon, P. [Centre Nacional de Microelectronica (IMB-CNM-CSIC), Campus UAB, System Integration, 08193 Barcelona (Spain)

    2009-04-01

    A low resistivity ohmic contact to Si-implanted GaN was achieved using a metal combination of Ti/Al. The effect of a protection cap during post-implantation annealing is investigated, and how it affects the specific contact resistivity ({rho}{sub c}). Relevant differences between the protected (PR) sample with SiO{sub 2} and unprotected (UP) sample during the post-implantation annealing were observed after metal alloying at 700 deg. C. The lower values of {rho}{sub c} have been obtained for UP sample, but with very low reproducibility. In contrast, SiO{sub 2} cap layer has demonstrated its relevance in yielding a much more uniformity of a relatively low {rho}{sub c} around 10{sup -5} {Omega} cm{sup 2}. Related mechanism for the uniformity in {rho}{sub c} was discussed based on the results obtained from electrical measurements, XRD (X-ray diffraction) analysis, AFM (atomic force microscopy) and SEM (scanning electron microscopy) observations.

  11. Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw; Yang, Cheng-Yi [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Lee, Fang-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsin-Chu 300, Taiwan (China); Huang, Hao-Ping [Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan (China)

    2015-10-21

    This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

  12. Electrical, Chemical, And Microstructural Analysis of the Thermal Stability of Nickel-based Ohmic Contacts to Silicon Carbide for High-Temperature Electronics

    Science.gov (United States)

    Virshup, Ariel R.

    With increasing attention on curbing the emission of pollutants into the atmosphere, chemical sensors that can be used to monitor and control these unwanted emissions are in great demand. Examples include monitoring of hydrocarbons from automobile engines and monitoring of flue gases such as CO emitted from power plants. One of the critical limitations in high-temperature SiC gas sensors, however, is the degradation of the metal-SiC contacts over time. In this dissertation, we investigated the high-temperature stability of Pt/TaSix/Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The high-temperature stability of a Pt/TaSi2/Ni/SiC ohmic contact metallization scheme was characterized using a combination of current-voltage measurements, Auger electron spectroscopy, secondary ion mass spectrometry, and transmission electron microscope imaging and associated analytical techniques. Increasing the thicknesses of the Pt and TaSi2 layers promoted electrical stability of the contacts, which remained ohmic at 600°C in air for over 300 h; the specific contact resistance showed only a gradual increase from an initial value of 5.2 x 10-5 O-cm 2. We observed a continuous silicon-oxide layer in the thinner contact structures, which failed after 36 h of heating. It was found that the interface between TaSix and NiySi was weakened by the accumulation of free carbon (produced by the reaction of Ni and SiC), which in turn facilitated oxygen diffusion from the contact edges. Additional oxygen diffusion occurred along grain boundaries in the Pt overlayer. Meanwhile, thicker contacts, with less interfacial free carbon and enhanced electrical stability contained a much lower oxygen concentration that was distributed across the contact layers, precluding the formation of an electrically insulating contact structure.

  13. Contact metallurgy optimization for ohmic contacts to InP

    DEFF Research Database (Denmark)

    Clausen, Thomas; Pedersen, Arne Skyggebjerg; Leistiko, Otto

    1991-01-01

    AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowe...

  14. Minimization of the Ohmic Loss of Grooved Polarizer Mirrors in High-Power ECRH Systems

    Science.gov (United States)

    Wagner, D.; Leuterer, F.; Kasparek, W.; Stober, J.

    2016-10-01

    A set of two corrugated polarizer mirrors is typically used in high-power electron cyclotron resonance heating (ECRH) systems to provide the required polarization of the ECRH output beam. The ohmic losses of these mirrors can significantly exceed the losses of plane mirrors depending on the polarization of the incident beam with respect to the orientation of the grooves. Since polarizer mirrors incorporated into miter bends of a corrugated waveguide line are limited in size, active water cooling can become critical in high-power cw systems like the one for ITER. The ohmic loss of polarizer mirrors has been investigated experimentally at high power. A strategy to minimize the losses for given mirror geometries has been found.

  15. Minimization of the Ohmic Loss of Grooved Polarizer Mirrors in High-Power ECRH Systems

    Science.gov (United States)

    Wagner, D.; Leuterer, F.; Kasparek, W.; Stober, J.

    2017-02-01

    A set of two corrugated polarizer mirrors is typically used in high-power electron cyclotron resonance heating (ECRH) systems to provide the required polarization of the ECRH output beam. The ohmic losses of these mirrors can significantly exceed the losses of plane mirrors depending on the polarization of the incident beam with respect to the orientation of the grooves. Since polarizer mirrors incorporated into miter bends of a corrugated waveguide line are limited in size, active water cooling can become critical in high-power cw systems like the one for ITER. The ohmic loss of polarizer mirrors has been investigated experimentally at high power. A strategy to minimize the losses for given mirror geometries has been found.

  16. Capillarity-Driven Welding of Semiconductor Nanowires for Crystalline and Electrically Ohmic Junctions.

    Science.gov (United States)

    Celano, Thomas A; Hill, David J; Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; McBride, James R; Cahoon, James F

    2016-08-10

    Semiconductor nanowires (NWs) have been demonstrated as a potential platform for a wide-range of technologies, yet a method to interconnect functionally encoded NWs has remained a challenge. Here, we report a simple capillarity-driven and self-limited welding process that forms mechanically robust and Ohmic inter-NW connections. The process occurs at the point-of-contact between two NWs at temperatures 400-600 °C below the bulk melting point of the semiconductor. It can be explained by capillarity-driven surface diffusion, inducing a localized geometrical rearrangement that reduces spatial curvature. The resulting weld comprises two fused NWs separated by a single, Ohmic grain boundary. We expect the welding mechanism to be generic for all types of NWs and to enable the development of complex interconnected networks for neuromorphic computation, battery and solar cell electrodes, and bioelectronic scaffolds.

  17. Ohmic resistance affects microbial community and electrochemical kinetics in a multi-anode microbial electrochemical cell

    Science.gov (United States)

    Multi-anode microbial electrochemical cells (MXCs) are considered as one of the most promising configurations for scale-up of MXCs, but fundamental understanding of anode kinetics governing current density is limited in the MXCs. In this study we first assessed microbial communi...

  18. Detection of inhomogeneities in membrane ohmic resistance in geometrically complex systems

    DEFF Research Database (Denmark)

    Svirskis, G; Hounsgaard, J; Gutman, A

    2000-01-01

    DC field-evoked transients in arbitrarily shaped neurons and syncytia were analyzed theoretically. In systems with homogeneous passive membrane properties, the transients develop much faster than the membrane discharges. Conductance of the proximal membrane could be larger due to the injury impos...

  19. Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

    Energy Technology Data Exchange (ETDEWEB)

    Yan, J.; Kappers, M.J.; McAleese, C.; Humphreys, C.J. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Crossley, A. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Phillips, W.A. [phconsult Ltd., 54 Convent Garden, Cambridge CB1 2HR (United Kingdom)

    2004-10-01

    The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n- and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contact resistivity better than 10{sup -7} {omega} cm{sup 2} was obtained using a plasma treatment of 20 s at 30 W and 0.2 mbar, followed by RTA at 500 C in argon. The I-V characteristics of the Ti/Al contacts degraded when plasma treatments were performed for a longer time and/or at increased plasma pressure. However, in contrast to n-GaN, the electrical properties of the Ni/Au contacts to p-GaN and Ti/Al contacts to n-Al{sub 0.15}Ga{sub 0.85}N deteriorated following oxygen plasma treatment. X-ray photoelectron spectroscopy (XPS) was used in order to help elucidate the mechanisms behind these effects. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Au-free ohmic Ti/Al/TiN contacts to UID n-GaN fabricated by sputter deposition

    Science.gov (United States)

    Garbe, V.; Weise, J.; Motylenko, M.; Münchgesang, W.; Schmid, A.; Rafaja, D.; Abendroth, B.; Meyer, D. C.

    2017-02-01

    The fabrication and characterization of an Au-free Ti/Al/TiN (20/100/100 nm) contact stack to unintentionally doped n-GaN with TiN serving as the diffusion barrier is presented. Sputter deposition and lift-off in combination with post deposition annealing at 850 °C are used for contact formation. After annealing, contact shows ohmic behavior to n-GaN and a specific contact resistivity of 1.60 × 10-3 Ω cm2. To understand the contact formation on the microscopic scale, the contact was characterized by current-voltage measurements, linear transmission line method, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. The results show the formation of Ti-N bonds at the GaN/Ti interface in the as-deposited stack. Annealing leads to diffusion of Ti, Al, Ga, and N, and the remaining metallic Ti is fully consumed by the formation of the intermetallic tetragonal Al3Ti phase. Native oxide from the GaN surface is trapped during annealing and accumulated in the Al interlayer. The TiN capping layer, however, was chemically stable during annealing. It prevented oxidation of the Ti/Al contact bilayer successfully and thus proved to be a well suitable diffusion barrier with ideal compatibility to the Ti/Al contact metallization.

  1. KARAKTERISTIK PEMANASAN OHMIC SELAMA PROSES ALKALISASI RUMPUT LAUT JENIS Eucheuma cottonii.

    OpenAIRE

    Supratomo; Salengke; Abdul, Azis

    2012-01-01

    Fenomena pembangkitan panas dalam suatu bahan akibat disipasi energi listrik menjadi energi panas dikenal dengan Joule heating atau Ohmic heating. Fenomena ini dapat dimanfaatkan untuk pengolahan bahan pangan karena bahan tersebut memiliki kemampuan sebagai penghantar listrik. Dalam pengolahan rumput laut sebagai bahan untuk menghasilkan agar, karaginan dan alginat, proses pengolahannya dapat dilakukan dengan memanaskan rumput laut di dalam larutan alkali yang umumnya merupakan senyawa basa k...

  2. Ohmic lines for one-dimensional in-line and two-dimensional cylindrical Josephson junctions

    DEFF Research Database (Denmark)

    Helweg, C.; Levring, O. A.; Samuelsen, Mogens Rugholm;

    1985-01-01

    Expressions for the ohmic lines in the IV characteristic for one-dimensional in-line geometry Josephson junctions as well as for two-dimensional cylindrical Josephson junctions are presented. The expressions are compared to numerical simulations of Josephson junctions using the fluxon model; the ......; however, depending on the initial conditions we find 1/2 and 1/3 harmonic generation. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  3. Poisson-Nernst-Planck model with Chang-Jaffe, diffusion, and ohmic boundary conditions

    Science.gov (United States)

    Lelidis, I.; Macdonald, J. Ross; Barbero, G.

    2016-01-01

    Using the linear Poisson-Nernst-Planck impedance-response continuum model, we investigate the possible equivalences of three different types of boundary conditions previously proposed to model the electrode behavior of an electrolytic cell in the shape of a slab. We show analytically that the boundary conditions proposed long ago by Chang-Jaffe are fully equivalent to the ohmic boundary conditions only if the positive and negative ions have the same mobility, or when only ions of a single polarity are mobile. In the case where the ions have different and non-zero mobilities, we fit exact impedance spectra created for ohmic boundary conditions by using the Chang-Jaffe Poisson-Nernst-Planck response model, one that is dominated by diffusion effects. These fits yield conditions for essentially exact or approximate numerical correspondence for the complex impedance between the two models even in the unequal mobility case. Finally, diffusion type boundary conditions are shown to be fully equivalent to the ohmic one. Some limiting cases of the model parameters are investigated.

  4. Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

    Science.gov (United States)

    Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

    2016-11-24

    To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron

  5. Role of carbon in the formation of ohmic contact in Ni/4H-SiC and Ni/Ti/4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siad, M., E-mail: siadmenouar@yahoo.fr [Centre de Recherche Nucleaire d' Alger, 02 Bd Frantz Fanon (Algeria); Abdesslam, M.; Chami, A.C. [USTHB, Faculte de Physique, BP 32, El Alia, Bab Ezzouar (Algeria)

    2012-07-01

    In this work, we focus on the role of carbon in the Ni and Ni/Ti contacts on n-type 4H-SiC. The contacts, formed on the backside of the wafers C-face by electron gun evaporation and annealed at 950 Degree-Sign C, were studied by Raman spectroscopy (RS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The results show that titanium acts as a diffusion barrier for Si and C preventing the formation of the unfavourable phase NiSi and interacts with carbon to form TiC. The transformation of carbon to graphitic structure (in Ni/Ti/SiC) considerably lowers the sheet resistance and greatly improves the ohmic contact.

  6. Mathematical modeling and microbiological verification of ohmic heating of a multicomponent mixture of particles in a continuous flow ohmic heater system with electric field parallel to flow.

    Science.gov (United States)

    Kamonpatana, Pitiya; Mohamed, Hussein M H; Shynkaryk, Mykola; Heskitt, Brian; Yousef, Ahmed E; Sastry, Sudhir K

    2013-11-01

    To accomplish continuous flow ohmic heating of a low-acid food product, sufficient heat treatment needs to be delivered to the slowest-heating particle at the outlet of the holding section. This research was aimed at developing mathematical models for sterilization of a multicomponent food in a pilot-scale ohmic heater with electric-field-oriented parallel to the flow and validating microbial inactivation by inoculated particle methods. The model involved 2 sets of simulations, one for determination of fluid temperatures, and a second for evaluating the worst-case scenario. A residence time distribution study was conducted using radio frequency identification methodology to determine the residence time of the fastest-moving particle from a sample of at least 300 particles. Thermal verification of the mathematical model showed good agreement between calculated and experimental fluid temperatures (P > 0.05) at heater and holding tube exits, with a maximum error of 0.6 °C. To achieve a specified target lethal effect at the cold spot of the slowest-heating particle, the length of holding tube required was predicted to be 22 m for a 139.6 °C process temperature with volumetric flow rate of 1.0 × 10(-4) m3/s and 0.05 m in diameter. To verify the model, a microbiological validation test was conducted using at least 299 chicken-alginate particles inoculated with Clostridium sporogenes spores per run. The inoculated pack study indicated the absence of viable microorganisms at the target treatment and its presence for a subtarget treatment, thereby verifying model predictions.

  7. Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Song, X., E-mail: xi.song@st.com [Universite Francois Rabelais, Tours, LMP, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Biscarrat, J. [Universite Francois Rabelais, Tours, LMP, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Michaud, J.-F.; Cayrel, F. [Universite Francois Rabelais, Tours, LMP, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche bat 4, BP 267, 73375 Le Bourget du Lac Cedex (France); Portail, M. [Centre de Recherche sur l' Hetero-Epitaxie et ses Applications CNRS, rue Bernard Gregory, 06560 Valbonne (France); Collard, E. [STMicroelectronics, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Alquier, D. [Universite Francois Rabelais, Tours, LMP, 16, rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)

    2011-09-15

    Highlights: {yields} N, P and N and P co-implantation in 3C-SiC. {yields} Closed to 100% of activation for N implanted/annealed sample at 1400 {sup o}C. {yields} Low surface roughness (<5 nm) after annealing by using carbon protective layer. {yields} Ultra-low SCR (2.6 x 10{sup -6} {Omega} cm{sup 2}) with Ti/Ni contact on N implanted/annealed sample. - Abstract: In this work, non-intentionally doped cubic silicon carbide (3C-SiC) epilayers grown on (1 0 0) silicon substrates were implanted using nitrogen (N), phosphorus (P) implantations or their co-implantation (N and P). After annealing from 1150 to 1400 {sup o}C, Secondary Ion Mass Spectroscopy (SIMS), Atomic Force Microscopy (AFM), Fourier Transformed InfraRed spectroscopy (FTIR), Scanning Spreading Resistance Microscopy (SSRM) and Scanning Transmission Electron Microscopy (STEM) analysis were performed. Specific contact resistances ({rho}{sub c}) of Ti/Ni ohmic contacts were determined using Circular Transfer Length Method (c-TLM) patterns. Our work shows that co-implantation, experimentally investigated for the first time in 3C-SiC, is not beneficial for the doping efficiency. According to the silicon substrate, the post-implantation annealing is limited to 1400 {sup o}C. Consecutively to this limit, the total recovering of the lattice does not seem to be possible, whatever are the implanted species. Moreover, as the crystal damages increase when increasing the atomic mass of the implanted species, a comparative study using SSRM measurements proved that, for the same post-implantation annealing treatment, the resistivity of implanted layers depend on the doping species. As a consequence, the lowest {rho}{sub c} value (2.8 x 10{sup -6} {Omega} cm{sup 2}) has been obtained (using Ti/Ni 25/100 nm pattern) for a 1400 {sup o}C-30 min annealing consecutively to the nitrogen implantation. This value is among the best values obtained on implanted 3C-SiC layers in the literature. Furthermore, for this annealing

  8. Thanatology in protoplanetary discs. The combined influence of Ohmic, Hall, and ambipolar diffusion on dead zones

    Science.gov (United States)

    Lesur, Geoffroy; Kunz, Matthew W.; Fromang, Sébastien

    2014-06-01

    Protoplanetary discs are poorly ionised due to their low temperatures and high column densities and are therefore subject to three "non-ideal" magnetohydrodynamic (MHD) effects: Ohmic dissipation, ambipolar diffusion, and the Hall effect. The existence of magnetically driven turbulence in these discs has been a central question since the discovery of the magnetorotational instability (MRI). Early models considered Ohmic diffusion only and led to a scenario of layered accretion, in which a magnetically "dead" zone in the disc midplane is embedded within magnetically "active" surface layers at distances of about 1-10 au from the central protostellar object. Recent work has suggested that a combination of Ohmic dissipation and ambipolar diffusion can render both the midplane and surface layers of the disc inactive and that torques due to magnetically driven outflows are required to explain the observed accretion rates. We reassess this picture by performing three-dimensional numerical simulations that include all three non-ideal MHD effects for the first time. We find that the Hall effect can generically "revive" dead zones by producing a dominant azimuthal magnetic field and a large-scale Maxwell stress throughout the midplane, provided that the angular velocity and magnetic field satisfy Ω·B > 0. The attendant large magnetic pressure modifies the vertical density profile and substantially increases the disc scale height beyond its hydrostatic value. Outflows are produced but are not necessary to explain accretion rates ≲ 10-7 M⊙ yr-1. The flow in the disc midplane is essentially laminar, suggesting that dust sedimentation may be efficient. These results demonstrate that if the MRI is relevant for driving mass accretion in protoplanetary discs, one must include the Hall effect to obtain even qualitatively correct results. Appendices are available in electronic form at http://www.aanda.org

  9. A Spectroscopic Study of Impurity Behavior in Neutral-beam and Ohmically Heated TFTR Discharges

    Science.gov (United States)

    Stratton, B. C.; Ramsey, A. T.; Boody, F. P.; Bush, C. E.; Fonck, R. J.; Groenbner, R. J.; Hulse, R. A.; Richards, R. K.; Schivell, J.

    1987-02-01

    Quantitative spectroscopic measurements of Z{sub eff}, impurity densities, and radiated power losses have been made for ohmic- and neutral-beam-heated TFTR discharges at a plasma current of 2.2 MA and toroidal field of 4.7 T. Variations in these quantities with line-average plasma density (anti n{sub e}) and beam power up to 5.6 MW are presented for discharges on a graphite movable limiter. A detailed discussion of the use of an impurity transport model to infer absolute impurity densities and radiative losses from line intensity and visible continuum measurements is given. These discharges were dominated by low-Z impurities with carbon having a considerably higher density than oxygen, except in high-anti n{sub e} ohmic discharges, where the densities of carbon and oxygen were comparable. Metallic impurity concentrations and radiative losses were small, resulting in hollow radiated power profiles and fractions of the input power radiated being 30 to 50% for ohmic heating and 30% or less with beam heating. Spectroscopic estimates of the radiated power were in good agreement with bolometrically measured values. Due to an increase in the carbon density, Z{sub eff} rose from 2.0 to 2.8 as the beam power increased from 0 to 5.6 MW, pointing to a potentially serious dilution of the neutron-producing plasma ions as the beam power increased. Both the low-Z and metallic impurity concentrations were approximately constant with minor radius, indicating no central impurity accumulation in these discharges.

  10. The Open-System Dicke-Model Quantum Phase Transition with a Sub-Ohmic Bath

    CERN Document Server

    Nagy, D

    2015-01-01

    We show that the critical exponent of a quantum phase transition in a damped-driven open system is determined by the spectral density function of the reservoir. We consider the open-system variant of the Dicke model, where the driven boson mode and also the large N-spin couple to independent reservoirs at zero temperature. The critical exponent, which is $1$ if there is no spin-bath coupling, decreases below 1 when the spin couples to a sub-Ohmic reservoir.

  11. Edge turbulence and transport studies with ergodic divertor, on Tore Supra ohmic discharges

    Energy Technology Data Exchange (ETDEWEB)

    Payan, J.; Garbet, X.; Clairet, F.; Devynck, P.; Laviron, C.; Chatenet, J.H.; Ghendrih, P.N.; Grosman, A. [Association Euratom-CEA, Centre d`Etudes de Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee; Gervais, F.; Hennequin, P.; Quemeneur, A.; Truc, A. [Ecole Polytechnique, 91 - Palaiseau (France). Lab. de Physique des Milieux Ionises

    1995-12-31

    Edge turbulence and transport studies have been performed when the ergodic divertor is applied on Tore Supra ohmic discharges. A modification of radial electric field profiles is expected. Such a change could influence edge transport and turbulence. A CO{sub 2} laser scattering diagnostic, ALTAIR, has been used to study the turbulence changes at the plasma edge. Reflectometry (used at fixed frequency) gives also access to localized turbulence measurements. Preliminary results from reflectometry are presented and compared to ALTAIR results. (K.A.) 6 refs.; 4 figs.

  12. Transient snakes in an ohmic plasma associated with a minor disruption in the HT-7 Tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Mao, Songtao; Xu, Liqing; Hu, Liqun; Chen, Kaiyun [Chinese Academy of Sciences, Hefei (China)

    2014-05-15

    A transient burst (∼2 ms, an order of the fast-particle slowdown timescale) of a spontaneous snake is observed for the first time in a HT-7 heavy impurity ohmic plasma. The features of the low-Z impurity snake are presented. The flatten electron profile due to the heavy impurity reveals the formation of a large magnetic island. The foot of the impurity accumulation is consistent with the location of the transient snake. The strong frequency-chirping behaviors and the spatial structures of the snake are also presented.

  13. Equilibrium dynamics of the sub-Ohmic spin-boson model under bias

    Science.gov (United States)

    Zheng, Da-Chuan; Tong, Ning-Hua

    2017-06-01

    Using the bosonic numerical renormalization group method, we studied the equilibrium dynamical correlation function C(ω) of the spin operator σ z for the biased sub-Ohmic spin-boson model. The small-ω behavior C(ω )\\propto {ω }s is found to be universal and independent of the bias ɛ and the coupling strength α (except at the quantum critical point α ={α }{{c}} and ɛ = 0). Our NRG data also show C(ω )\\propto {χ }2{ω }s for a wide range of parameters, including the biased strong coupling regime (\\varepsilon \

  14. Evaluation of non-thermal effects of electricity on anthocyanin degradation during ohmic heating of jaboticaba (Myrciaria cauliflora) juice.

    Science.gov (United States)

    Mercali, Giovana Domeneghini; Gurak, Poliana Deyse; Schmitz, Frederico; Marczak, Ligia Damasceno Ferreira

    2015-03-15

    This study investigated the non-thermal effects of electricity on anthocyanin degradation during ohmic heating of jaboticaba juice. For this, temperature profiles during conventional and ohmic heating processes were matched, and the degradation kinetics of anthocyanins were compared at temperatures ranging from 70 to 90°C. The monomeric anthocyanin content was quantified by UV-Visible spectroscopy using the pH-differential method. Anthocyanin degradation was fitted to a first-order model. The rate constants ranged from 1.7 to 7.5 × 10(-3)min(-1) and from 1.8 to 7.6 × 10(-3)min(-1) for ohmic and conventional heating, respectively. The analysis of variance (α=0.05) showed no significant differences between rate constants of the ohmic and conventional heating at the same temperatures. All kinetic and thermodynamic parameters evaluated showed similar values for both technologies. These results indicate that the presence of the oscillating electric field did not affect the degradation rates of anthocyanins during ohmic heating. Copyright © 2014 Elsevier Ltd. All rights reserved.

  15. Langmuir monolayers of gold nanoparticles: from ohmic to rectifying charge transfer

    Energy Technology Data Exchange (ETDEWEB)

    Chen Shaowei

    2003-10-31

    The lateral electrical/electronic conductivity of alkanethiolate-protected gold nanoparticles was evaluated at the air/water interface by using the Langmuir method. For particles with short protecting monolayers (C4Au and C5Au), the current-voltage profiles exhibited ohmic behaviors with conductivity several orders of magnitude smaller than that of bulk gold. The conductivity is found to decrease exponentially with increasing interparticle spacing. This is interpreted on the basis of electron tunneling/hopping between neighboring particles where the tunneling coefficient ({beta}) is found around 0.5 Angst{sup -1}. With longer alkyl protecting layers (C6 and above), the nanoparticle monolayers demonstrated rectifying charge-transfer characters. This transition from ohmic to diode-like responses can be attributable to the nanocomposite structure of the particle molecules, where the chemical nature of the core and the protecting monolayers, along with the interparticle environment and ordering, are found to play an important role in regulating the electrical/electronic properties of the nanoassemblies.

  16. Numerical modeling of tokamak breakdown phase driven by pure Ohmic heating under ideal conditions

    Science.gov (United States)

    Jiang, Wei; Peng, Yanli; Zhang, Ya; Lapenta, Giovanni

    2016-12-01

    We have simulated tokamak breakdown phase driven by pure Ohmic heating with implicit particle in cell/Monte Carlo collision (PIC/MCC) method. We have found two modes can be differentiated. When performing breakdown at low initial gas pressure, we find that it works at lower density and current, but higher temperature, and requires lower heating power, compared to when having a high initial pressure. Further, two stages can be distinguished during the avalanche process. One is the fast avalanche stage, in which the plasma is heated by induced toroidal electric field. The other is the slow avalanche stage, which begins when the plasma density reaches 1015 m-3. It has been shown that ions are mainly heated by ambipolar field and become stochastic in the velocity distribution. However, when the induced electric field is low, there exists a transition phase between the two stages. Our model simulates the breakdown and early hydrogen burn-through under ideal conditions during tokamak start-up. It adopted fewer assumptions, and can give an idealized range of operative parameters for Ohmic start-up. Qualitatively, the results agree well with certain experimental observations.

  17. Transparent Ohmic Contacts for Solution-Processed, Ultrathin CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Kurley, J. Matthew; Panthani, Matthew G.; Crisp, Ryan W.; Nanayakkara, Sanjini U.; Pach, Gregory F.; Reese, Matthew O.; Hudson, Margaret H.; Dolzhnikov, Dmitriy S.; Tanygin, Vadim; Luther, Joseph M.; Talapin, Dmitri V.

    2017-01-13

    Recently, solution-processing became a viable route for depositing CdTe for use in photovoltaics. Ultrathin (~500 nm) solar cells have been made using colloidal CdTe nanocrystals with efficiencies exceeding 12% power conversion efficiency (PCE) demonstrated by using very simple device stacks. Further progress requires an effective method for extracting charge carriers generated during light harvesting. Here, we explored solution-based methods for creating transparent Ohmic contacts to the solution-deposited CdTe absorber layer and demonstrated molecular and nanocrystal approaches to Ohmic hole-extracting contacts at the ITO/CdTe interface. We used scanning Kelvin probe microscopy to further show how the above approaches improved carrier collection by reducing the potential drop under reverse bias across the ITO/CdTe interface. Other methods, such as spin-coating CdTe/A2CdTe2 (A = Na, K, Cs, N2H5), can be used in conjunction with current/light soaking to improve PCE further.

  18. Evaluation of non-thermal effects of electricity on ascorbic acid and carotenoid degradation in acerola pulp during ohmic heating.

    Science.gov (United States)

    Jaeschke, Débora Pez; Marczak, Ligia Damasceno Ferreira; Mercali, Giovana Domeneghini

    2016-05-15

    The effect of electric field on ascorbic acid and carotenoid degradation in acerola pulp during ohmic heating was evaluated. Ascorbic acid kinetic degradation was evaluated at 80, 85, 90 and 95°C during 60 min of thermal treatment by ohmic and conventional heating. Carotenoid degradation was evaluated at 90 and 95°C after 50 min of treatment. The different temperatures evaluated showed the same effect on degradation rates. To investigate the influence of oxygen concentration on the degradation process, ohmic heating was also carried out under rich and poor oxygen modified atmospheres at 90°C. Ascorbic acid and carotenoid degradation was higher under a rich oxygen atmosphere, indicating that oxygen is the limiting reagent of the degradation reaction. Ascorbic acid and carotenoid degradation was similar for both heating technologies, demonstrating that the presence of the oscillating electric field did not influence the mechanisms and rates of reactions associated with the degradation process.

  19. The Effect of Buoyancy Force in Computational Fluid Dynamics Simulation of a Two-Dimensional Continuous Ohmic Heating Process

    Directory of Open Access Journals (Sweden)

    Elzubier A. Salih

    2009-01-01

    Full Text Available Problem statement: Earlier research on ohmic heating technique focused on viscous food and foods containing solid particles. In this study, use of ohmic heating on sterilization of guava juice is carried out. Computational fluid dynamics was used to model and simulate the system. Investigate the buoyancy effect on the CFD simulation of continuous ohmic heating systems of fluid foods. Approach: A two-dimensional model describing the flow, temperature and electric field distribution of non-Newtonian power law guava juice fluid in a cylindrical continuous ohmic heating cell was developed. The electrical conductivity, thermo physical and rheological properties of the fluid was temperature dependent. Numerical simulation was carried out using FLUENT 6.1 software package. A user defined functions available in FLUENT 6.1 was employed for the electric field equation. The heating cell used consisted of a cylindrical tube of diameter 0.05 m, height 0.50 m and having three collinear electrodes of 0.02 m width separated by a distance of 0.22 m. The sample was subjected to zero voltage at the top and bottom of electrodes while electrical potential of 90 volts (AC 50-60 Hz was set at the middle electrode. The inlet velocity is 0.003 m sec-1 and the temperature is in the range of 30-90°C. Results: Simulation was carried with and without buoyancy driven force effect. The ohmic heating was successfully simulated using CFD and the results showed that the buoyancy had a strong effect in temperature profiles and flow pattern of the collinear electrodes configuration ohmic heating. A more uniform velocity and temperature profiles were obtained with the buoyancy effect included. Conclusion: For accurate results, the inclusion of buoyancy effect into the CFD simulation is important.

  20. Magnetic Shear and Transport in ECRH Discharges of the TJ-II under Ohmic Induction

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Bruna, D.; Castejon, F.; Romero, J. A.; Estrada, T.; Medina, F.; Ochando, M.; Lopez-Fraguas, A.; Ascasibar, E.; Herranz, J.; Sanchez, E.; Luna, E. de la; Pastor, I.

    2006-07-01

    TJ-II is ha heliac type stellarator characterised by high, but almost constant, vacuum rotational transform throughout the confining volume. In ECRH plasmas, moderate induced ohmic currents (negligible heating and modification of the magnetic field nodules) are enough to disregard the bootstrap contribution, which allows us performing a fair calculation of the evolution of the rotational transform. We use the loop voltage diagnostic to estimate the plasma electrical conductivity. Then the evolution of the rotational transform and shear is related to changes in the profiles of electron and thermal diffusivities: negative shear correlates with decreasing diffusivities in the region of steepest density gradient; transport increases toward zero shear but the achieved positive values are too small to draw conclusions. The radial sweeping of lowest order rational magnetic surfaces does not determine the observed trends in transport. (Author)43 refs.

  1. Self-organized helical equilibria as a new paradigm for ohmically heated fusion plasmas

    Science.gov (United States)

    Lorenzini, R.; Martines, E.; Piovesan, P.; Terranova, D.; Zanca, P.; Zuin, M.; Alfier, A.; Bonfiglio, D.; Bonomo, F.; Canton, A.; Cappello, S.; Carraro, L.; Cavazzana, R.; Escande, D. F.; Fassina, A.; Franz, P.; Gobbin, M.; Innocente, P.; Marrelli, L.; Pasqualotto, R.; Puiatti, M. E.; Spolaore, M.; Valisa, M.; Vianello, N.; Martin, P.; Martin, P.; Apolloni, L.; Puiatti, M. E.; Adamek, J.; Agostini, M.; Alfier, A.; Annibaldi, S. V.; Antoni, V.; Auriemma, F.; Barana, O.; Baruzzo, M.; Bettini, P.; Bolzonella, T.; Bonfiglio, D.; Bonomo, F.; Brombin, M.; Brotankova, J.; Buffa, A.; Buratti, P.; Canton, A.; Cappello, S.; Carraro, L.; Cavazzana, R.; Cavinato, M.; Chapman, B. E.; Chitarin, G.; Dal Bello, S.; de Lorenzi, A.; de Masi, G.; Escande, D. F.; Fassina, A.; Ferro, A.; Franz, P.; Gaio, E.; Gazza, E.; Giudicotti, L.; Gnesotto, F.; Gobbin, M.; Grando, L.; Guazzotto, L.; Guo, S. C.; Igochine, V.; Innocente, P.; Liu, Y. Q.; Lorenzini, R.; Luchetta, A.; Manduchi, G.; Marchiori, G.; Marcuzzi, D.; Marrelli, L.; Martini, S.; Martines, E.; McCollam, K.; Milani, F.; Moresco, M.; Novello, L.; Ortolani, S.; Paccagnella, R.; Pasqualotto, R.; Peruzzo, S.; Piovan, R.; Piovesan, P.; Piron, L.; Pizzimenti, A.; Pomaro, N.; Predebon, I.; Reusch, J. A.; Rostagni, G.; Rubinacci, G.; Sarff, J. S.; Sattin, F.; Scarin, P.; Serianni, G.; Sonato, P.; Spada, E.; Soppelsa, A.; Spagnolo, S.; Spolaore, M.; Spizzo, G.; Taliercio, C.; Terranova, D.; Toigo, V.; Valisa, M.; Vianello, N.; Villone, F.; White, R. B.; Yadikin, D.; Zaccaria, P.; Zamengo, A.; Zanca, P.; Zaniol, B.; Zanotto, L.; Zilli, E.; Zohm, H.; Zuin, M.

    2009-08-01

    In the quest for new energy sources, the research on controlled thermonuclear fusion has been boosted by the start of the construction phase of the International Thermonuclear Experimental Reactor (ITER). ITER is based on the tokamak magnetic configuration, which is the best performing one in terms of energy confinement. Alternative concepts are however actively researched, which in the long term could be considered for a second generation of reactors. Here, we show results concerning one of these configurations, the reversed-field pinch (RFP). By increasing the plasma current, a spontaneous transition to a helical equilibrium occurs, with a change of magnetic topology. Partially conserved magnetic flux surfaces emerge within residual magnetic chaos, resulting in the onset of a transport barrier. This is a structural change and sheds new light on the potential of the RFP as the basis for a low-magnetic-field ohmic fusion reactor.

  2. Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Bory, Benjamin F.; Janssen, René A. J.; Meskers, Stefan C. J., E-mail: s.c.j.meskers@tue.nl [Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Rocha, Paulo R. F.; Gomes, Henrique L. [Instituto de Telecomunicações, Av. Rovisco, Pais, 1, 1049 – 001, Lisboa, Portugal and Universidade do Algarve, Campus de Gambelas, 8005-139 Faro (Portugal); De Leeuw, Dago M. [Max-Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany and King Abdulaziz University, Jeddah (Saudi Arabia)

    2014-09-22

    Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density–electroluminescence–voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements.

  3. Residence time distribution (RTD) of particulate foods in a continuous flow pilot-scale ohmic heater.

    Science.gov (United States)

    Sarang, Sanjay; Heskitt, Brian; Tulsiyan, Priyank; Sastry, Sudhir K

    2009-08-01

    The residence time distribution (RTD) of a model particulate-fluid mixture (potato in starch solution) in the ohmic heater in a continuous sterilization process was measured using a radio frequency identification (RFID) methodology. The effect of solid concentration and the rotational speed of the agitators on the RTD were studied. The velocity of the fastest particle was 1.62 times the mean product velocity. In general, particle velocity was found to be greater than the product bulk average velocity. Mean particle residence time (MPRT) increased with an increase in the rotational speed of the agitators (P < 0.05), and no particular trend was observed between the MPRT and the solid concentration. The distribution curves E (theta) were skewed to the right suggesting slow moving zones in the system.

  4. Copper-Metalized GaAs pHEMT with Cu/Ge Ohmic Contacts

    OpenAIRE

    E. V. Anichenko; Arykov, V. S.; Erofeev, E. V.; Kagadei, V. A.

    2012-01-01

    The fully Cu-metalized GaAs pHEMT using developed Cu/Ge-based ohmic contacts and T-gate Ti/Mo/Cu with length of the 150 nm has been successfully fabricated for the high-frequency applications. The fabricated Cu-metalized pHEMT has a maximum drain current of 360 mA/mm, an off-state gate-drain breakdown of 7 V, and a transconductance peak of 320 mS/mm at Vds=3 V. The maximum stable gain value was about 15 dB at frequency 10 GHz. The current gain cutoff frequency of the copper-metalized device ...

  5. Entanglement dynamics of a two-qubit system coupled individually to Ohmic baths

    CERN Document Server

    Duan, Liwei; Chen, Qinghu; Zhao, Yang

    2013-01-01

    The Davydov D1 ansatz, which assigns an individual bosonic trajectory to each spin state, is an efficient, yet accurate trial state for time-dependent variation of the the spin-boson model [J. Chem. Phys. 138, 084111 (2013)]. In this work, the Dirac-Frenkel time-dependent variational procedure utilizing the Davydov D1 ansatz is implemented to study entanglement dynamics of two qubits under the influence of two independent baths. The Ohmic spectral density is used without the Born-Markov approximation or the rotating-wave approximation. In the strong coupling regime the entanglement sudden death is always found to exist, while at the intermediate coupling regime, the entanglement dynamics calculated by Davydov D1 ansatz displays oscillatory behavior in addition to entanglement sudden death and revival.

  6. Analytic representations of bath correlation functions for ohmic and superohmic spectral densities using simple poles

    Science.gov (United States)

    Ritschel, Gerhard; Eisfeld, Alexander

    2014-09-01

    We present a scheme to express a bath correlation function (BCF) corresponding to a given spectral density (SD) as a sum of damped harmonic oscillations. Such a representation is needed, for example, in many open quantum system approaches. To this end we introduce a class of fit functions that enables us to model ohmic as well as superohmic behavior. We show that these functions allow for an analytic calculation of the BCF using pole expansions of the temperature dependent hyperbolic cotangent. We demonstrate how to use these functions to fit spectral densities exemplarily for cases encountered in the description of photosynthetic light harvesting complexes. Finally, we compare absorption spectra obtained for different fits with exact spectra and show that it is crucial to take properly into account the behavior at small frequencies when fitting a given SD.

  7. Evolution of the electron temperature profile of ohmically heated plasmas in TFTR

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, G.; Efthimion, P.C.; Arunasalam, V.; Goldston, R.J.; Grek, B.; Hill, K.W.; Johnson, D.W.; McGuire, K.; Ramsey, A.T.; Stauffer, F.J.

    1985-08-01

    Blackbody electron cyclotron emission was used to ascertain and study the evolution and behavior of the electron temperature profile in ohmically heated plasmas in the Tokamak Fusion Test Reactor (TFTR). The emission was measured with absolutely calibrated millimeter wavelength radiometers. The temperature profile normalized to the central temperature and minor radius is observed to broaden substantially with decreasing limiter safety factor q/sub a/, and is insensitive to the plasma minor radius. Sawtooth activity was seen in the core of most TFTR discharges and appeared to be associated with a flattening of the electron temperature profile within the plasma core where q less than or equal to 1. Two types of sawtooth behavior were identified in large TFTR plasmas (minor radius, a less than or equal to 0.8 m) : a typically 35 to 40 msec period ''normal'' sawtooth, and a ''compound'' sawtooth with 70 to 80 msec period.

  8. A semiconductor device noise model: integration of Poisson type stochastic ohmic contact conditions with semiclassical transport

    Science.gov (United States)

    Noaman, B. A.; Korman, C. E.; Piazza, A. J.

    2007-06-01

    In this paper we show an approach to couple two stochastic processes to describe the dynamics of independent carriers in semiconductor devices: the launch time of carriers from the contacts is described by independent Poisson launch processes, and the stochastic motion of carriers due to scattering inside the device is described by inhomogeneous Poisson type Markov processes according to the semiclassical transport theory. The coupling of the Poisson type stochastic launch process to the semiclassical dynamics will be shown, and the resulting Ohmic contact boundary conditions will be derived. For proof of concept, an expression for the autocovariance for terminal current noise for one point contact will be shown which can be easily extended to a real semiconductor device with multiple contacts.

  9. A Dip Structure in the Intrinsic Toroidal Rotation Near the Edge of the Ohmic Plasmas in EAST

    DEFF Research Database (Denmark)

    Xu, Guosheng; Naulin, Volker; Wan, Baonian

    2011-01-01

    Ion's toroidal velocity, vt, in both the outermost 4 cm of the confined region and the scrap-off layer of Ohmic L-mode plasmas in EAST was measured using Mach probes. At about 1 cm inside the separatrix a local minimum in vt was observed, from which a cocurrent rotation increased both inwards...

  10. Development of iron-rich whey protein hydrogels following application of ohmic heating - Effects of moderate electric fields.

    Science.gov (United States)

    Pereira, Ricardo N; Rodrigues, Rui M; Altinok, Emir; Ramos, Óscar L; Xavier Malcata, F; Maresca, Paola; Ferrari, Giovanna; Teixeira, José A; Vicente, António A

    2017-09-01

    The influence that ohmic heating technology and its associated moderate electric fields (MEF) have upon production of whey protein isolate cold-set gels mediated by iron addition was investigated. Results have shown that combining heating treatments (90°C, 5min) with different MEF intensities let hydrogels with distinctive micro and macro properties - i.e. particle size distribution, physical stability, rheological behavior and microstructure. Resulting hydrogels were characterized (at nano-scale) by an intensity-weighted mean particle diameter of 145nm, a volume mean of 240nm. Optimal conditions for production of stable whey protein gels were attained when ohmic heating treatment at a MEF of 3V∙cm(-1) was combined with a cold gelation step using 33mmol∙L(-1) of Fe(2+). The consistency index of hydrogels correlated negatively to MEF intensity, but a shear thickening behavior was observed when MEF intensity was increased up to 10V∙cm(-1). According to transmission electron microscopy, ohmic heating gave rise to a more homogenous and compact fine-stranded whey protein-iron microstructure. Ohmic heating appears to be a promising technique, suitable to tailor properties of whey protein gels and with potential for development of innovative functional foods. Copyright © 2017 Elsevier Ltd. All rights reserved.

  11. Influence of infrared final cooking on color, texture and cooking characteristics of ohmically pre-cooked meatball.

    Science.gov (United States)

    Turp, Gulen Yildiz; Icier, Filiz; Kor, Gamze

    2016-04-01

    The objective of the current study was to improve the quality characteristics of ohmically pre-cooked beef meatballs via infrared cooking as a final stage. Samples were pre-cooked in a specially designed-continuous type ohmic cooker at a voltage gradient of 15.26 V/cm for 92 s. Infrared cooking was then applied to the pre-cooked samples at different combinations of heat fluxes (3.706, 5.678, and 8.475 kW/m(2)), application distances (10.5, 13.5, and 16.5 cm) and application durations (4, 8, and 12min). Effects of these parameters on color, texture and cooking characteristics of ohmically pre-cooked beef meatballs were investigated. The appearance of ohmically pre-cooked meatball samples was improved via infrared heating. A dark brown layer desired in cooked meatballs formed on the surface of the meatballs with lowest application distance (10.5 cm) and longest application duration (12 min). The texture of the samples was also improved with these parameters. However the cooking yield of the samples decreased at the longest application duration of infrared heating.

  12. Initial Thomson Scattering Survey of Local Helicity Injection and Ohmic Plasmas at the Pegasus Toroidal Experiment

    Science.gov (United States)

    Schlossberg, D. J.; Bodner, G. M.; Bongard, M. W.; Fonck, R. J.; Winz, G. R.

    2014-10-01

    A multipoint Thomson scattering diagnostic has recently been installed on the Pegasus ST. The system utilizes a frequency-doubled Nd:YAG laser (λ0 ~ 532 nm), spectrometers with volume phase holographic gratings, and a gated, intensified CCD camera. It provides measurements of Te and ne at 8 spatial locations for each spectrometer once per discharge. A new multiple aperture and beam dump system has been implemented to mitigate interference from stray light. This system has provided initial measurements in the core region of plasmas initiated by local helicity injection (LHI), as well as conventional Ohmic L- and H-mode discharges. Multi-shot averages of low-density (ne ~ 3 ×1018 m-3) , Ip ~ 0 . 1 MA LHI discharges show central Te ~ 75 eV at the end of the helicity injection phase. Ip ~ 0 . 13 MA Ohmic plasmas at moderate densities (ne ~ 2 ×1019 m-3) have core Te ~ 150 eV in L-mode. Generally, these plasmas do not reach transport equilibrium in the short 25 ms pulse length available. After an L-H transition, strong spectral broadening indicates increasing Te, to values above the range of the present spectrometer system with a high-dispersion VPH grating. Near-term system upgrades will focus on deploying a second spectrometer, with a lower-dispersion grating capable of measuring the 0.1-1.0 keV range. The second spectrometer system will also increase the available number of spatial channels, enabling study of H-mode pedestal structure. Work supported by US DOE Grant DE-FG02-96ER54375.

  13. Quantitative comparison of electron temperature fluctuations to nonlinear gyrokinetic simulations in C-Mod Ohmic L-mode discharges

    Science.gov (United States)

    Sung, C.; White, A. E.; Mikkelsen, D. R.; Greenwald, M.; Holland, C.; Howard, N. T.; Churchill, R.; Theiler, C.

    2016-04-01

    Long wavelength turbulent electron temperature fluctuations (kyρs 0.8) of Ohmic L-mode plasmas at Alcator C-Mod [E. S. Marmar et al., Nucl. Fusion 49, 104014 (2009)] with a correlation electron cyclotron emission diagnostic. The relative amplitude and frequency spectrum of the fluctuations are compared quantitatively with nonlinear gyrokinetic simulations using the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] in two different confinement regimes: linear Ohmic confinement (LOC) regime and saturated Ohmic confinement (SOC) regime. When comparing experiment with nonlinear simulations, it is found that local, electrostatic ion-scale simulations (kyρs ≲ 1.7) performed at r/a ˜ 0.85 reproduce the experimental ion heat flux levels, electron temperature fluctuation levels, and frequency spectra within experimental error bars. In contrast, the electron heat flux is robustly under-predicted and cannot be recovered by using scans of the simulation inputs within error bars or by using global simulations. If both the ion heat flux and the measured temperature fluctuations are attributed predominantly to long-wavelength turbulence, then under-prediction of electron heat flux strongly suggests that electron scale turbulence is important for transport in C-Mod Ohmic L-mode discharges. In addition, no evidence is found from linear or nonlinear simulations for a clear transition from trapped electron mode to ion temperature gradient turbulence across the LOC/SOC transition, and also there is no evidence in these Ohmic L-mode plasmas of the "Transport Shortfall" [C. Holland et al., Phys. Plasmas 16, 052301 (2009)].

  14. Quantitative comparison of electron temperature fluctuations to nonlinear gyrokinetic simulations in C-Mod Ohmic L-mode discharges

    Energy Technology Data Exchange (ETDEWEB)

    Sung, C., E-mail: csung@physics.ucla.edu [University of California, Los Angeles, Los Angeles, California 90095 (United States); White, A. E.; Greenwald, M.; Howard, N. T. [Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Mikkelsen, D. R.; Churchill, R. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Holland, C. [University of California, San Diego, La Jolla, California 92093 (United States); Theiler, C. [Ecole Polytechnique Fédérale de Lausanne, SPC, Lausanne 1015 (Switzerland)

    2016-04-15

    Long wavelength turbulent electron temperature fluctuations (k{sub y}ρ{sub s} < 0.3) are measured in the outer core region (r/a > 0.8) of Ohmic L-mode plasmas at Alcator C-Mod [E. S. Marmar et al., Nucl. Fusion 49, 104014 (2009)] with a correlation electron cyclotron emission diagnostic. The relative amplitude and frequency spectrum of the fluctuations are compared quantitatively with nonlinear gyrokinetic simulations using the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] in two different confinement regimes: linear Ohmic confinement (LOC) regime and saturated Ohmic confinement (SOC) regime. When comparing experiment with nonlinear simulations, it is found that local, electrostatic ion-scale simulations (k{sub y}ρ{sub s} ≲ 1.7) performed at r/a ∼ 0.85 reproduce the experimental ion heat flux levels, electron temperature fluctuation levels, and frequency spectra within experimental error bars. In contrast, the electron heat flux is robustly under-predicted and cannot be recovered by using scans of the simulation inputs within error bars or by using global simulations. If both the ion heat flux and the measured temperature fluctuations are attributed predominantly to long-wavelength turbulence, then under-prediction of electron heat flux strongly suggests that electron scale turbulence is important for transport in C-Mod Ohmic L-mode discharges. In addition, no evidence is found from linear or nonlinear simulations for a clear transition from trapped electron mode to ion temperature gradient turbulence across the LOC/SOC transition, and also there is no evidence in these Ohmic L-mode plasmas of the “Transport Shortfall” [C. Holland et al., Phys. Plasmas 16, 052301 (2009)].

  15. Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation

    Science.gov (United States)

    Gaddy, Benjamin E.; Kingon, Angus I.; Irving, Douglas L.

    2013-05-01

    Ohmic RF-MEMS switches hold much promise for low power wireless communication, but long-term degradation currently plagues their reliable use. Failure in these devices occurs at the contact and is complicated by the fact that the same asperities that bear the mechanical load are also important to the flow of electrical current needed for signal processing. Materials selection holds the key to overcoming the barriers that prevent widespread use. Current efforts in materials selection have been based on the material's (or alloy's) ability to resist oxidation as well as its room-temperature properties, such as hardness and electrical conductivity. No ideal solution has yet been found via this route. This may be due, in part, to the fact that the in-use changes to the local environment of the asperity are not included in the selection criteria. For example, Joule heating would be expected to raise the local temperature of the asperity and impose a non-equilibrium thermal gradient in the same region expected to respond to mechanical actuation. We propose that these conditions should be considered in the selection process, as they would be expected to alter mechanical, electrical, and chemical mechanisms in the vicinity of the surface. To this end, we simulate the actuation of an Ohmic radio frequency micro electro mechanical systems switch by using a multi-scale method to model a current-carrying asperity in contact with a polycrystalline substrate. Our method couples continuum solutions of electrical and thermal transport equations to an underlying molecular dynamics simulation. We present simulations of gold-nickel asperities and substrates in order to evaluate the influence of alloying and local order on the early stages of contact actuation. The room temperature response of these materials is compared to the response of the material when a voltage is applied. Au-Ni interactions are accounted for through modification of the existing Zhou embedded atom method

  16. Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes.

    Science.gov (United States)

    Cui, Xu; Shih, En-Min; Jauregui, Luis A; Chae, Sang Hoon; Kim, Young Duck; Li, Baichang; Seo, Dongjea; Pistunova, Kateryna; Yin, Jun; Park, Ji-Hoon; Choi, Heon-Jin; Lee, Young Hee; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Dean, Cory R; Hone, James C

    2017-08-09

    Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve low-temperature Ohmic contacts to monolayer MoS2, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kΩ.μm at a carrier density of 5.3 × 10(12)/cm(2). This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS2 at much lower carrier densities compared to previous work.

  17. Continuous ohmic heating of commercially processed apple juice using five sequential electric fields results in rapid inactivation of Alicyclobacillus acidoterrestris spores.

    Science.gov (United States)

    Kim, N H; Ryang, J H; Lee, B S; Kim, C T; Rhee, M S

    2017-04-04

    Spores of Alicyclobacillus acidoterrestris, a spoilage bacterium, cause problems for the apple juice industry because they are resistant to thermal treatment. Here, we examined the sporicidal effect of an ohmic heating (OH) system with five sequential electric fields and compared it with that of conventional heating. Apple juice product (50kg) inoculated with A. acidoterrestris spores were subjected to OH (electric field strength=26.7V/cm; frequency=25kHz) at 85-100°C for 30-90s. The effect of conventional heating was also examined under these conditions. OH treatment at 100°C for 30s resulted in total inactivation of the inoculum, with no recovery of viable cells (initial population=4.8-4.9logCFU/ml), whereas 3.6-4.9logCFU/ml of the spores survived conventional heating. OH did not alter the quality (°Brix, color, and pH) of commercial apple juice (p>0.05). These results suggest that the OH system is superior to conventional heating for rapid sterilization (30s) of apple juice to assure microbiological quality in the absence of chemical additives. Copyright © 2017. Published by Elsevier B.V.

  18. Bridging the gap: disk formation in the Class 0 phase with ambipolar diffusion and Ohmic dissipation

    CERN Document Server

    Dapp, Wolf B; Kunz, Matthew W

    2011-01-01

    Context: Ideal MHD simulations have revealed catastrophic magnetic braking (MB) in the protostellar phase, which prevents the formation of a centrifugal disk around a nascent protostar. Aims: We determine if non-ideal MHD, including the effects of ambipolar diffusion and Ohmic dissipation determined from a detailed chemical network model, allows for disk formation at the earliest stages of star formation (SF). Methods: We employ the axisymmetric thin-disk approximation in order to resolve a dynamic range of 9 orders of magnitude in length and 16 in density, while also calculating partial ionization using up to 19 species in a detailed chemical equilibrium model. MB is applied using a steady-state approximation, and a barotropic relation is used to capture the thermal evolution. Results: We resolve the formation of the first and second cores, with expansion waves at the periphery of each, a magnetic diffusion shock, and prestellar infall profiles at larger radii. Power-law profiles in each region can be unders...

  19. Effect of the Electric Field Frequency on Ascorbic Acid Degradation during Thermal Treatment by Ohmic Heating

    Science.gov (United States)

    Mercali, Giovana Domeneghini; Schwartz, Steven; Marczak, Ligia Damasceno Ferreira; Tessaro, Isabel Cristina; Sastry, Sudhir

    2014-01-01

    In this work, the influence of the electric field frequency and solids content on the degradation kinetics of ascorbic acid during ohmic heating of acerola pulp and acerola serum was investigated. The degradation percentage of ascorbic acid in the pulp after 120 min of heating varied between 12 and 17%. For the serum, the degradation percentage was in the range of 13 and 18%. The results were fitted to the first-order model, and the kinetic rate constants ranged from 1.1 to 1.6 × 10−3 min−1 and from 1.1 to 1.5 × 10−3 min−1 for pulp and serum, respectively. D values ranged between 1480 and 2145 min for the pulp and between 1524 and 1951 min for the serum. A distinct behavior between the kinetic parameters of the pulp and serum in electric field frequencies ranging from 10 to 1000 Hz indicates that the presence of distinct amounts and types of solids might affect the rate of the electron transfer in electrochemical reactions. These variables may also affect the polarization process stimulated by the oscillating electric field. The non-achievement of the equilibrium of the polarization process may have an influence on oxidation reactions, affecting the predisposition to hydrogen donation from the ascorbic acid molecule. PMID:24892902

  20. Study of internal transport barriers in the initial phase of Ohmic discharges in TUMAN-3M

    Energy Technology Data Exchange (ETDEWEB)

    Askinazi, L G [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Bulanin, V V [St Petersburg State Polytechnical University, 195251 (Russian Federation); Vildjunas, M I [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Golant, V E [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Gorokhov, M V [St Petersburg State Polytechnical University, 195251 (Russian Federation); Kornev, V A [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Krikunov, S V [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Lebedev, S V [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Petrov, A V [St Petersburg State Polytechnical University, 195251 (Russian Federation); Rozhdestvensky, V V [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Tukachinsky, A S [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation); Zhubr, N A [Ioffe Physico-Technical Institute, RAS, 194021, St Petersburg (Russian Federation)

    2004-05-01

    A regime with electron heat confinement improvement was recently found in the initial phase of discharges in the TUMAN-3M tokamak. An internal transport barrier (ITB) formation in this regime was confirmed by Thomson scattering measurements and by transport modelling. Two possible reasons for the ITB formation are discussed in the paper: by reduction of turbulent transport in the presence of low magnetic shear or by plasma sheared rotation. It is demonstrated that low magnetic shear formation is possible in the current ramp-up phase of the Ohmic discharge. The low magnetic shear does not seem to be the only reason for the transport reduction. Results of Doppler reflectometry measurements of poloidal rotation of density fluctuations are presented. It is found that core confinement improvement correlates with the appearance of sheared rotation of the density fluctuations and with a burst of the MHD activity. The ITB formation in the regime seems to be a result of a combined action of reduced magnetic shear and plasma sheared rotation.

  1. Effect of the electric field frequency on ascorbic acid degradation during thermal treatment by ohmic heating.

    Science.gov (United States)

    Mercali, Giovana Domeneghini; Schwartz, Steven; Marczak, Ligia Damasceno Ferreira; Tessaro, Isabel Cristina; Sastry, Sudhir

    2014-06-25

    In this work, the influence of the electric field frequency and solids content on the degradation kinetics of ascorbic acid during ohmic heating of acerola pulp and acerola serum was investigated. The degradation percentage of ascorbic acid in the pulp after 120 min of heating varied between 12 and 17%. For the serum, the degradation percentage was in the range of 13 and 18%. The results were fitted to the first-order model, and the kinetic rate constants ranged from 1.1 to 1.6×10(-3) min(-1) and from 1.1 to 1.5×10(-3) min(-1) for pulp and serum, respectively. D values ranged between 1480 and 2145 min for the pulp and between 1524 and 1951 min for the serum. A distinct behavior between the kinetic parameters of the pulp and serum in electric field frequencies ranging from 10 to 1000 Hz indicates that the presence of distinct amounts and types of solids might affect the rate of the electron transfer in electrochemical reactions. These variables may also affect the polarization process stimulated by the oscillating electric field. The non-achievement of the equilibrium of the polarization process may have an influence on oxidation reactions, affecting the predisposition to hydrogen donation from the ascorbic acid molecule.

  2. Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Sinha, Nidhi [Crystal Lab, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Department of Electronics, SGTB Khalsa College, University of Delhi, Delhi 110007 (India); Ray, Geeta; Godara, Sanjay; Gupta, Manoj K. [Crystal Lab, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Kumar, Binay, E-mail: bkumar@physics.du.ac.in [Crystal Lab, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2014-11-15

    Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm{sup 2}) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications.

  3. Sub-Ohmic spin-boson model with off-diagonal coupling: ground state properties.

    Science.gov (United States)

    Lü, Zhiguo; Duan, Liwei; Li, Xin; Shenai, Prathamesh M; Zhao, Yang

    2013-10-28

    We have carried out analytical and numerical studies of the spin-boson model in the sub-ohmic regime with the influence of both the diagonal and the off-diagonal coupling accounted for, via the Davydov D1 variational ansatz. While a second-order phase transition is known to be exhibited by this model in the presence of diagonal coupling only, we demonstrate the emergence of a discontinuous first order phase transition upon incorporation of the off-diagonal coupling. A plot of the ground state energy versus magnetization highlights the discontinuous nature of the transition between the isotropic (zero magnetization) state and nematic (finite magnetization) phases. We have also calculated the entanglement entropy and a discontinuity found at a critical coupling strength further supports the discontinuous crossover in the spin-boson model in the presence of off-diagonal coupling. It is further revealed via a canonical transformation approach that for the special case of identical exponents for the spectral densities of the diagonal and the off-diagonal coupling, there exists a continuous crossover from a single localized phase to doubly degenerate localized phase with differing magnetizations.

  4. Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide%异质结n+多晶硅/n型4H-SiC欧姆接触的制备

    Institute of Scientific and Technical Information of China (English)

    郭辉; 冯倩; 汤晓燕; 张义门; 张玉明

    2008-01-01

    从理论和实验的角度研究了n型4H-SiC上的多晶硅欧姆接触.在P型4H-SiC外延层上使用P+离子注入来形成TLM结构的n阱.使用LPCVD淀积多晶硅并通过P+离子注入及扩散进行掺杂,得到的多晶硅方块电阻为22Ω/□.得到的n+多晶硅/n-SiC欧姆接触的比接触电阻为3.82×10-5Ω·cm2,接触下的注入层的方块电阻为4.9kΩ/□.对n+多晶硅/n-SiC欧姆接触形成的机理进行了讨论.%Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM (transfer length method) test patterns with polysilicon structure are formed on n-wells created by phosphorus ion (P+) implantation into a Si-faced p-type 4HSiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition (LPCVD) and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance ρc of n+ polysilicon contact to n-type 4H-SiC as low as 3. 82 x 10-5Ω· cm2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4. 9kΩ/□. The mechanisms for n~ polysilicon ohmic contact to n-type SiC are discussed.

  5. Comparison of equilibrium ohmic and nonequilibrium swarm models for monitoring conduction electron evolution in high-altitude EMP calculations

    Science.gov (United States)

    Pusateri, Elise N.; Morris, Heidi E.; Nelson, Eric; Ji, Wei

    2016-10-01

    Atmospheric electromagnetic pulse (EMP) events are important physical phenomena that occur through both man-made and natural processes. Radiation-induced currents and voltages in EMP can couple with electrical systems, such as those found in satellites, and cause significant damage. Due to the disruptive nature of EMP, it is important to accurately predict EMP evolution and propagation with computational models. CHAP-LA (Compton High Altitude Pulse-Los Alamos) is a state-of-the-art EMP code that solves Maxwell's equations for gamma source-induced electromagnetic fields in the atmosphere. In EMP, low-energy, conduction electrons constitute a conduction current that limits the EMP by opposing the Compton current. CHAP-LA calculates the conduction current using an equilibrium ohmic model. The equilibrium model works well at low altitudes, where the electron energy equilibration time is short compared to the rise time or duration of the EMP. At high altitudes, the equilibration time increases beyond the EMP rise time and the predicted equilibrium ionization rate becomes very large. The ohmic model predicts an unphysically large production of conduction electrons which prematurely and abruptly shorts the EMP in the simulation code. An electron swarm model, which implicitly accounts for the time evolution of the conduction electron energy distribution, can be used to overcome the limitations exhibited by the equilibrium ohmic model. We have developed and validated an electron swarm model previously in Pusateri et al. (2015). Here we demonstrate EMP damping behavior caused by the ohmic model at high altitudes and show improvements on high-altitude, upward EMP modeling obtained by integrating a swarm model into CHAP-LA.

  6. 液体食品连续通电加热装置%Continuous Ohmic Heating Device of Liquid Food

    Institute of Scientific and Technical Information of China (English)

    王冉冉; 田富洋; 朱敏; 张世福; 任杰; 李法德

    2012-01-01

    为实现液体食品的通电加热,结合整流逆变技术设计了液体食品连续通电加热装置,系统由可控脉冲电源、加热室、液泵和流量控制4部分组成.可控脉冲电源输出双极性高频方波脉冲电压,频率、电压和占空比可调,输出功率可达50 kW.实验证明,该装置加热速度快、控制简单方便、极板污染很少,能够满足液体食品的加工要求.%In order to achieve ohmic heating for liquid food, by using rectifier and inverter technology, continuous ohmic heating device was designed. The equipment was consisted of controllable pulsed power supply, ohmic heating chamber, pump and flow controller. Controllable pulsed power supply can output bipolar-rectangle waveform pulse voltage with high frequency. The frequency, amplitude and duty ratio were adjustable. The output capacity could reach to 50 kW. The result showed that the device could be controlled speedily and easily. It could meet the requirement of liquid food process and without pollution.

  7. Characterization of nonOhmic electrical transport in double perovskite compounds through bias scale and nonlinearity exponent

    Science.gov (United States)

    Chakraborty, D.; Nandi, U. N.; Jana, D.; Dasgupta, P.; Poddar, A.

    2017-01-01

    Scaling analysis of nonOhmic electrical transport in double perovskite (DP) compounds like La2NiMnO6 and Sr2Fe0.3Mn0.7MoO6 is presented over a wide range of electric bias and temperatures. It is shown that the voltage V0(T) at which conductance deviates from its Ohmic value Σ0(T) scales with Σ0(T) as V0(T) ∼Σ0(T) xT , xT being the onset exponent characterizing the onset of nonOhmic conduction. Interestingly, it was found that xT is negative and insensitive to the nature of conduction mechanism in DPs but is related to the characteristic temperature T0 and the mean hopping length Hm. We provide a scaling formalism in terms of the parameters V0(T) and xT in DPs for deeper understanding of the spintronic application and the electrode functioning in solid oxide fuel cells (SOFC). Inelastic multi-step tunneling is found to be the suitable mechanism of electronic transport characterized completely by these two parameters.

  8. Undistorted Cyclic Voltammograms at Scan Rates up to 2.5 MV·s-1 through Positive Feedback Compensation of Ohmic Drop

    Institute of Scientific and Technical Information of China (English)

    GUO Zhi-Yong郭智勇; LIN Xiang-Qin林祥钦; DENG Zhao-Xiang邓兆祥

    2004-01-01

    A circuit based on the current feedback operational amplifier was constructed to accomplish on-line ohmic drop compensation in ultrafast cyclic voltammetry. Firstly, its characteristics were confirmed experimentally on dummy cells. Then the reduction of anthracene in acetonitrile, a classical test example with very fast electron-tratnsfer kinetics, was examined to prove them too. The results showed that this circuit could afford excellent ohmic drop if 5% error is tolerated.

  9. Thermal analysis and testing for DIII-D ohmic heating coil repair

    Energy Technology Data Exchange (ETDEWEB)

    Baxi, C.B.; Anderson, P.M.; Gootgeld, A.M.

    1997-11-01

    The DIII-D ohmic heating (OH) coil solenoid consists of two parallel windings of 48 turns each cooled by water. Each winding is made up of four parallel conductors. Desired thermal capacity of the coil is 20 MJ at a repetition rate of 10 min. One of the conductors started leaking water in July 1995. Since then, the coil has been operated at a reduced thermal load using one winding. An experiment followed by an analysis was undertaken to determine if the OH-coil could be operated at full capacity without cooling the leaking segment by relying on conduction heat transfer to the neighboring cooled conductors. The analysis took into consideration the transient energy equations, including the effect of conduction between neighboring conductors. The axial conduction was modeled in the conductor, but was ignored in the coolant. An experiment was performed on the undamaged coil winding to determine the thermal conductance between neighboring conductors. The experiment consisted of passing hot water through adjacent cooling channels of two conductors and cold water through the cooling channels of the remaining two conductors of the same winding. The flow rate, inlet and outlet temperatures from each circuit were measured during the transient. From the experimental data and analysis an average thermal conductance between the conductors was determined to be about 0.1 W/cm{sup 2}-C. Using the experimentally determined value of the thermal conductance, an analysis was performed on a coil winding consisting of one uncooled conductor and three cooled conductors. Results show that it is possible to operate the full OH-coil without cooling the damaged conductor to the desired thermal load of 20 MJ per pulse.

  10. Effect of milk fat content on the performance of ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica Serovar Typhimurium and Listeria monocytogenes.

    Science.gov (United States)

    Kim, S-S; Kang, D-H

    2015-08-01

    The effect of milk fat content on ohmic heating compared to conventional heating for inactivation of food-borne pathogens was investigated. Sterile cream was mixed with sterile buffered peptone water and adjusted to 0, 3, 7, 10% (w/v) milk fat content. These samples with varying fat content were subjected to ohmic and conventional heating. The effect of milk fat on temperature increase and electrical conductivity were investigated. Also, the protective effect of milk fat on the inactivation of foodborne pathogens was studied. For conventional heating, temperatures of samples increased with time and were not significantly (P > 0.05) different regardless of fat content. Although the inactivation rate of Escherichia coli O157:H7, Salmonella Typhimurium and L. monocytogens decreased in samples of 10% fat content, a protective effect was not observed for conventional heating. In contrast with conventional heating, ohmic heating was significantly affected by milk fat content. Temperature increased more rapidly with lower fat content for ohmic heating due to higher electrical conductivity. Nonuniform heat generation of nonhomogeneous fat-containing samples was verified using a thermal infrared camera. Also, the protective effect of milk fat on E. coli O157:H7 and Listeria monocytogenes was observed in samples subjected to ohmic heating. These results indicate that food-borne pathogens can survive in nonhomogeneous fat-containing foods subjected to ohmic heating. Therefore, more attention is needed regarding ohmic heating than conventional heating for pasteurizing fat-containing foods. The importance of adequate pasteurization for high milk fat containing foods was identified. © 2015 The Society for Applied Microbiology.

  11. Modelling of coupled heat and electric field distribution during ohmic heating of solid foods with varying sizes

    DEFF Research Database (Denmark)

    Feyissa, Aberham Hailu; Bøknæs, Niels; Nielsen, P.L.

    Heat treatment is an important process in the manufacturing of a wide range of solid foods. When food products of different sizes (e.g. cooking of shrimps) are processed with the conventional thermal processes, the products are heated unevenly where the small bodies are overcooked and the large...... developed. The mathematical model has been formulated from mechanistic understanding of the process. The resulting coupled model equations were solved using the Finite Element Method (COMSOL Multiphysics® version 4.3b). Experiments were carried out using a newly developed laboratory-scale ohmic heater where...

  12. Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

    OpenAIRE

    Chung-Hua Chao; Mao-Yi Chen; Chii-Ruey Lin; Yueh-Chung Yu; Yeong-Der Yao; Da-Hua Wei

    2013-01-01

    This paper describes a fabrication and characterization of ultraviolet (UV) photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002) thin film. Plasma enhanced chemical vapor deposition (PECVD) system was employed to deposit ZnO (0002) thin films onto silicon substrates, and radio-frequency (RF) magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two differe...

  13. An ohmic field power supply based on a modified IGBT H-bridge for Sino-UNIted Spherical Tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Yi, E-mail: tanyi@sunist.org; Yang, Guixiang; Xie, Huiqiao; Liu, Yangqing; Ke, Rui; Jiang, Yanzheng; Chai, Song; Wang, Wenhao; Gao, Zhe

    2015-10-15

    Highlights: • An ohmic field power supply based on a modified H-bridge. • 10 kA class IGBT switches. • IGBTs do not need high frequency turn on/off. • Different current deviations are generated by two capacitor banks with different capacitances and voltages. - Abstract: Air core solenoids are widely used in spherical tokamaks (STs), since their central stacks are quite compact and difficult to insert iron cores. However, much higher current are required to generate the same amount of flux in the solenoids with air core than in the ones with iron cores. Therefore, the power supplies of ohmic fields in STs are more challenging than those in conventional tokamaks with similar size. In this paper, a power supply based on insulated gate bipolar transistors (IGBTs) for the ohmic field coils in the Sino-UNIted Spherical Tokamak (SUNIST) is described. This power supply utilizes a modified H-bridge circuit, in which the high current switches are made by 10 IGBTs (rating 3.3 kV/1.2 kA) connected in parallel. A high voltage capacitor bank (1.2 kV/60 mF) and a low voltage capacitor bank (600 V/500 mF) store the energy required in different discharging stages. An adjustable low inductance high power resistor (0–0.3 Ω) made by stainless steel foils is used to help the circuit to generate a high current derivative in the ohmic field coils, which are required for gas breakdown, plasma current initiation and ramp up. The small loop voltage required for maintaining the plasma current is realized by the low voltage capacitor bank. For each tokamak discharge, all the switches of this power supply only need to be switched on and off one time with an interval of several milliseconds. Such slow operations of the IGBTs lower the risk of failure and minimize the technical difficulties of dynamical current sharing. The power supply is compact and reliable, and has discharged for more than 5000 times successfully.

  14. Resistance blow-up effect in micro-circuit engineering

    Science.gov (United States)

    Tan, Michael L. P.; Saxena, Tanuj; Arora, Vijay K.

    2010-12-01

    The nonlinearity in the I- V characteristics of a scaled-down micro/nano-scale resistive channel is shown to elevate the DC and signal resistance as current approaches its saturation value. The deviation from traditional circuit engineering takes place when the applied voltage is increased beyond the critical voltage V c = ( V t/ ℓ) L, where V t is the thermal voltage, ℓ is the ohmic mean free path, and L is the length of the conducting channel. This resistance blow-up is more pronounced for a smaller-length resistor in a micro-circuit of two resistors with same ohmic value. The power consumed P = VI not only is lower but also is a linear function of voltage V as compared to the quadratic rise with V in the ohmic regime. The resistance blow-up effect also gives enhanced RC time constant for transients when a digital signal switches from low to high or vice versa. These results are of immense value to circuit designers and those doing device characterization to extract parasitic and transport parameters.

  15. Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

    Directory of Open Access Journals (Sweden)

    Chung-Hua Chao

    2013-01-01

    Full Text Available This paper describes a fabrication and characterization of ultraviolet (UV photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002 thin film. Plasma enhanced chemical vapor deposition (PECVD system was employed to deposit ZnO (0002 thin films onto silicon substrates, and radio-frequency (RF magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two different ambients (argon and nitrogen to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, atomic force microscopy (AFM, photoluminescence (PL, UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H52] to carbon dioxide (CO2 and then combined with Pt electrode annealed at 450∘C in argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

  16. Application of low frequency pulsed ohmic heating for inactivation of foodborne pathogens and MS-2 phage in buffered peptone water and tomato juice.

    Science.gov (United States)

    Kim, Sang-Soon; Choi, Won; Kang, Dong-Hyun

    2017-05-01

    The purpose of this study was to inactivate foodborne pathogens effectively by ohmic heating in buffered peptone water and tomato juice without causing electrode corrosion and quality degradation. Escherichia coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes were used as representative foodborne pathogens and MS-2 phage was used as a norovirus surrogate. Buffered peptone water and tomato juice inoculated with pathogens were treated with pulsed ohmic heating at different frequencies (0.06-1 kHz). Propidium iodide uptake values of bacterial pathogens were significantly (p heating is applicable to inactivate foodborne pathogens effectively without causing electrode corrosion and quality degradation in tomato juice.

  17. Schottky or Ohmic metal-semiconductor contact: influence on photocatalytic efficiency of Ag/ZnO and Pt/ZnO model systems.

    Science.gov (United States)

    Yan, Fengpo; Wang, Yonghao; Zhang, Jiye; Lin, Zhang; Zheng, Jinsheng; Huang, Feng

    2014-01-01

    The relationship between the contact type in metal-semiconductor junctions and their photocatalytic efficiencies is investigated. Two metal-semiconductor junctions, silver on zinc oxide (Ag/ZnO) and platinum on zinc oxide (Pt/ZnO) serve as model system for Ohmic and Schottky metal-semiconductor contact, respectively. Ag/ZnO, with Ohmic contact, exhibits a higher photocatalytic efficiency than Pt/ZnO, with Schottky contact. The direction of electric fields within the semiconductor is found to play a crucial role in the separation of photogenerated charges, and thus strongly influences the photocatalytic efficiency.

  18. Non-ohmic phenomena in Mn-doped BaTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prades, Marta; Beltran, Hector; Cordoncillo, Eloisa [Departamento de Quimica Inorganica y Organica, Universitat Jaume I, Avda. Sos Baynat s/n, 12071 Castellon (Spain); Alonso, Pablo J. [Instituto de Ciencia de Materiales de Aragon, ICMA, Universidad de Zaragoza-C.S.I.C., C/Pedro Cerbuna 12, 50009 Zaragoza (Spain); Maso, Nahum; West, Anthony R. [Department of Materials Science and Engineering, University of Sheffield, Mappin Street, S1 3JD Sheffield (United Kingdom)

    2012-11-15

    We report here a novel effect in which the resistance of a semiconducting oxide ceramic increases on application of a small dc bias. The ceramic conducts at high temperatures by an n-type hopping mechanism. On application of a dc bias, conduction electrons are trapped at surface states and the resistance increases. On removal of the dc bias, the trapped electrons are released and the sample regains its original state. This effect is the mirror image of that seen with similar ceramics that conduct by a p-type mechanism whose resistance decreases reversibly on application of a small dc bias. These two phenomena together offer the possibility of novel switching devices and memristive applications, especially if the switching times can be reduced. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. A variational description of the quantum phase transition in the sub-Ohmic spin-boson model

    CERN Document Server

    Chin, A W; Huelga, S F; Plenio, M B

    2011-01-01

    The sub-ohmic spin-boson model is known to possess a novel quantum phase transition at zero temperature between a localised and delocalised phase. We present here an analytical theory based on a variational ansatz for the ground state, which describes a continuous localization transition with mean-field exponents for $0

  20. Quantum Phase Transitions in the Sub-Ohmic Spin-Boson Model: Failure of the Quantum-Classical Mapping

    Science.gov (United States)

    Vojta, Matthias; Tong, Ning-Hua; Bulla, Ralf

    2005-02-01

    The effective theories for many quantum phase transitions can be mapped onto those of classical transitions. Here we show that the naive mapping fails for the sub-Ohmic spin-boson model which describes a two-level system coupled to a bosonic bath with power-law spectral density, J(ω)∝ωs. Using an ɛ expansion we prove that this model has a quantum transition controlled by an interacting fixed point at small s, and support this by numerical calculations. In contrast, the corresponding classical long-range Ising model is known to display mean-field transition behavior for 0

  1. Effects of ohmic heating and viscous dissipation on steady MHD flow near a stagnation point on an isothermal stretching sheet

    Directory of Open Access Journals (Sweden)

    Sharma Pushkar Raj

    2009-01-01

    Full Text Available Aim of the paper is to investigate effects of ohmic heating and viscous dissipation on steady flow of a viscous incompressible electrically conducting fluid in the presence of uniform transverse magnetic field and variable free stream near a stagnation point on a stretching non-conducting isothermal sheet. The governing equations of continuity, momentum, and energy are transformed into ordinary differential equations and solved numerically using Runge-Kutta fourth order with shooting technique. The velocity and temperature distributions are discussed numerically and presented through graphs. Skin-friction coefficient and the Nusselt number at the sheet are derived, discussed numerically, and their numerical values for various values of physical parameters are compared with earlier results and presented through tables.

  2. Stationary distribution functions for ohmic Tokamak-plasmas in the weak-collisional transport regime by MaxEnt principle

    Science.gov (United States)

    Sonnino, Giorgio; Peeters, Philippe; Sonnino, Alberto; Nardone, Pasquale; Steinbrecher, György

    2015-01-01

    In previous works, we derived stationary density distribution functions (DDF) where the local equilibrium is determined by imposing the maximum entropy (MaxEnt) principle, under the scale invariance restrictions, and the minimum entropy production theorem. In this paper we demonstrate that it is possible to reobtain these DDF solely from the MaxEnt principle subject to suitable scale invariant restrictions in all the variables. For the sake of concreteness, we analyse the example of ohmic, fully ionized, tokamak-plasmas, in the weak-collisional transport regime. In this case we show that it is possible to reinterpret the stationary distribution function in terms of the Prigogine distribution function where the logarithm of the DDF is directly linked to the entropy production of the plasma. This leads to the suggestive idea that also the stationary neoclassical distribution functions, for magnetically confined plasmas in the collisional transport regimes, may be derived solely by the MaxEnt principle.

  3. Effects of Cu content on non-Ohmic properties of CaCu3Ti4O12

    Science.gov (United States)

    Xiao, Mi; Huang, Haixiao

    2016-10-01

    The non-stoichiometric CaCu3+ x Ti4O12 ( x = 0, ±0.1, ±0.2, ±0.3) thin films were prepared by sol-gel method and sintered at 700 °C. X-ray diffraction and Scanning electron microscope were used to analyze phase compositions and the microstructure characteristics of the films. CuO and Cu2O secondary phases were detected in the non-stoichiometric samples. The non-Ohmic behaviors were determined by a semiconductor parameter analyzer. The results showed that the breakdown voltages of Cu non-stoichiometric samples were less sensitive to different voltage rise rate. Cu non-stoichiometry would result in the increase in nonlinear coefficients ( α) and barrier heights (Φ B ). The breakdown voltages decreased with the increased environmental temperatures because of the intrinsic effect, which indicates the existence of back-to-back Schottky barriers at grain boundaries.

  4. Model-based statistical estimation of Sandia RF ohmic switch dynamic operation form stroboscopic, x-ray imaging.

    Energy Technology Data Exchange (ETDEWEB)

    Diegert, Carl F.

    2006-12-01

    We define a new diagnostic method where computationally-intensive numerical solutions are used as an integral part of making difficult, non-contact, nanometer-scale measurements. The limited scope of this report comprises most of a due diligence investigation into implementing the new diagnostic for measuring dynamic operation of Sandia's RF Ohmic Switch. Our results are all positive, providing insight into how this switch deforms during normal operation. Future work should contribute important measurements on a variety of operating MEMS devices, with insights that are complimentary to those from measurements made using interferometry and laser Doppler methods. More generally, the work opens up a broad front of possibility where exploiting massive high-performance computers enable new measurements.

  5. Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

    DEFF Research Database (Denmark)

    Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

    2002-01-01

    We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

  6. Electrical characteristics of Ni Ohmic contact on n-type GeSn

    Energy Technology Data Exchange (ETDEWEB)

    Li, H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Lee, L. C.; Lee, C. P. [Center for Nano Science and Technology, National Chiao Tung University, Hsinchu 300, Taiwan (China); Su, L. H.; Suen, Y. W. [Department of Physics and Institute of Nano Science, National Chung Hsing University, Taichung 402, Taiwan (China)

    2014-06-16

    We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350 °C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn) = 1:1 yields the lowest specific contact resistivity.

  7. Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

    Science.gov (United States)

    Cai, Duanjun; Wang, Huachun; Huang, Youyang; Wu, Chenping; Chen, Xiaohong; Gao, Na; Wei, Tongbo T.; Wang, Junxi; Li, Shuping; Kang, Junyong

    2016-09-01

    Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

  8. Interplay between Nanochannel and Microchannel Resistances.

    Science.gov (United States)

    Green, Yoav; Eshel, Ran; Park, Sinwook; Yossifon, Gilad

    2016-04-13

    Current nanochannel system paradigm commonly neglects the role of the interfacing microchannels and assumes that the ohmic electrical response of a microchannel-nanochannel system is solely determined by the geometric properties of the nanochannel. In this work, we demonstrate that the overall response is determined by the interplay between the nanochannel resistance and various microchannel attributed resistances. Our experiments confirm a recent theoretical prediction that in contrast to what was previously assumed at very low concentrations the role of the interfacing microchannels on the overall resistance becomes increasingly important. We argue that the current nanochannel-dominated conductance paradigm can be replaced with a more correct and intuitive microchannel-nanochannel-resistance-model-based paradigm.

  9. Modelling the Ohmic L-mode ramp-down phase of JET hybrid pulses using JETTO with Bohm-gyro-Bohm transport

    Science.gov (United States)

    Bizarro, João P. S.; Köchl, Florian; Voitsekhovitch, Irina; EFDA Contributors, JET

    2016-11-01

    The empirical Bohm-gyro-Bohm (BgB) transport model implemented in the JETTO code is used to predictively simulate the purely Ohmic (OH), L-mode current-ramp-down phase of three JET hybrid pulses, which combine two different ramp rates with two different electron densities (at the beginning of the ramp). The modelling is discussed, namely the strategy to reduce as much as possible the number of free parameters used to benchmark the model predictions against the experimental results. Hence, keeping the gas puffing rate as measured whilst controlling the line-averaged electron density via the recycling coefficient (which in the modelling is taken at the separatrix instead of the wall), one of the many possible ways to fix the total particle source, it is shown that the BgB model reproduces well the experimental data, as far as both average quantities (plasma internal inductance and volume-averaged electron temperature) and profiles (electron density and temperature) are concerned, with relative errors remaining mostly below 20 % . The sensitivenesses with respect to the recycling coefficient, the ion effective charge, the energy of neutrals entering the plasma through the separatrix and the need to introduce a particle pinch are assessed; the necessity for a proper sawtooth model if experimental results are to be reproduced is also shown. The strong non-linear coupling in a OH plasma between density, temperature and current (essentially via interplay between the power-balance equation, Joule’s heating with a temperature-dependent resistivity and the dependence of BgB transport coefficients on profile gradients) is put in evidence and analyzed in light of modelling results. It is still inferred from the modelling that the real value of the recycling coefficient at the separatrix (basically, the so-called fuelling efficiency times the actual recycling coefficient at the wall) must become close to one in the final stages of the discharges, when the gas puffing is

  10. Asymptotic Stability for an Axis-Symmetric Ohmic Heating Model in Thermal Electricity

    Directory of Open Access Journals (Sweden)

    Anyin Xia

    2013-01-01

    Full Text Available The asymptotic behavior of the solution for the Dirichlet problem of the parabolic equation with nonlocal term ut=urr+ur/r+f(u/(a+2πb∫01‍f(urdr2, for  00,u1,t=u′(0,t=0, for  t>0,  ur,0=u0r,  for  0≤r≤1. The model prescribes the dimensionless temperature when the electric current flows through two conductors, subject to a fixed potential difference. One of the electrical resistivity of the axis-symmetric conductor depends on the temperature and the other one remains constant. The main results show that the temperature remains uniformly bounded for the generally decreasing function f(s, and the global solution of the problem converges asymptotically to the unique equilibrium.

  11. Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications

    Science.gov (United States)

    Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I.; Chang, Edward Yi

    2016-07-01

    In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WN x Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WN X Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

  12. Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm

    Energy Technology Data Exchange (ETDEWEB)

    Emelyanov, V. M., E-mail: resso2003@bk.ru; Mintairov, S. A.; Sorokina, S. V.; Khvostikov, V. P.; Shvarts, M. Z. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-01-15

    The method of mathematical simulation is used to examine the influence exerted by the characteristics of the epitaxial structure and contact grid of photovoltaic laser-power converters on their ohmic loss. The maximum attainable photoconverter efficiency at a Gaussian distribution of the laser-beam intensity on the surface of a photovoltaic converter and at dark-current densities of p–n junctions typical of structures grown by the metal-organic vapor-phase epitaxy (MOVPE) technique are determined. An approach to finding the optimal parameters of GaAs and In{sub 0.24}Ga{sub 0.76}As/GaAs photovoltaic converters in relation to the optical power being converted is suggested, and the structural parameters for incident-power values of 5, 20, and 50 W at wavelengths of 809 and 1064 nm are determined. It is found that, at laser-light intensities of up to 5 W, >60% efficiency can be achieved in laser-light conversion at a wavelength of 809 nm and >55% efficiency, at a wavelength of 1064 nm.

  13. Study on Matching a 300 MVA Motor Generator with an Ohmic Heating Power Supply in HL-2M

    Science.gov (United States)

    Peng, Jianfei; Xuan, Weimin; Wang, Haibing; Li, Huajun; Wang, Yingqiao; Wang, Shujin

    2013-03-01

    A new 300 MVA/1350 MJ motor generator (MG) will be built to feed all of the poloidal field power supplies (PFPS) and auxiliary heating power supplies of the HL-2M tokamak. The MG has a vertical-shaft salient pole 6-phase synchronous generator and a coaxial 8500 kW induction motor. The Ohmic heating power supply (OHPS) consisting of 4-quadrant DC pulsed convertor is the one with the highest parameters among the PFPS. Therefore, the match between the generator and the OHPS is very important. The matching study with Matlab/Simulink is described in this paper. The simulation results show that the subtransient reactance of the generator is closely related to the inversion operation of the OHPS. By setting various subtransient reactance in the simulation generator model and considering the cost reduction, the optimized parameters are obtained as x″d = 0.405 p.u. at 100 Hz for the generator. The models built in the simulation can be used as an important tool for studying the dynamic characteristics and the control strategy of other HL-2M PFPSes.

  14. Effects of Ohmic Heating, Including Electric Field Intensity and Frequency, on Thermal Inactivation of Bacillus subtilis Spores.

    Science.gov (United States)

    Murashita, Suguru; Kawamura, Shuso; Koseki, Shigenobu

    2017-01-01

    Methods for microbial inactivation are important in the food industry; however, conventional external heating (CH) reduces food quality. Accordingly, the nonthermal effects of ohmic heating (OH) on Bacillus subtilis spores in a sodium chloride aqueous solution at 101°C (i.e., the boiling point), as well as the effects of electric field intensity and frequency during OH, were investigated. Survival kinetics were compared between OH and external CH. The inactivation effect on B. subtilis was greater for all electric field conditions (5, 10, and 20 V/cm) than for CH. In particular, 20 V/cm showed a significantly higher inactivation effect (P 0.05) in survival kinetics between 20, 40, and 60 kHz; B. subtilis spores were inactivated more efficiently as the frequency increased. B. subtilis spores were almost completely inactivated at 14 to 16 min for the 60-kHz treatment, but spores were still alive at 20 and 40 kHz for the same treatment times. These results demonstrated that OH inactivates B. subtilis spores more effectively than CH. OH conditions with high electric field intensities and high frequencies resulted in efficient B. subtilis spore inactivation.

  15. Quantum Phase Transition in the Sub-Ohmic Spin-Boson Model: Quantum MonteCarlo Study with a Continuous Imaginary Time Cluster Algorithm

    Science.gov (United States)

    Winter, André; Rieger, Heiko; Vojta, Matthias; Bulla, Ralf

    2009-01-01

    A continuous time cluster algorithm for two-level systems coupled to a dissipative bosonic bath is presented and applied to the sub-Ohmic spin-boson model. When the power s of the spectral function J(ω)∝ωs is smaller than 1/2, the critical exponents are found to be classical, mean-field like. Potential sources for the discrepancy with recent renormalization group predictions are traced back to the effect of a dangerously irrelevant variable.

  16. Investigation of optimum ohmic heating conditions for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in apple juice.

    Science.gov (United States)

    Park, Il-Kyu; Ha, Jae-Won; Kang, Dong-Hyun

    2017-05-19

    Control of foodborne pathogens is an important issue for the fruit juice industry and ohmic heating treatment has been considered as one of the promising antimicrobial interventions. However, to date, evaluation of the relationship between inactivation of foodborne pathogens and system performance efficiency based on differing soluble solids content of apple juice during ohmic heating treatment has not been well studied. This study aims to investigate effective voltage gradients of an ohmic heating system and corresponding sugar concentrations (°Brix) of apple juice for inactivating major foodborne pathogens (E. coli O157:H7, S. Typhimurium, and L. monocytogenes) while maintaining higher system performance efficiency. Voltage gradients of 30, 40, 50, and 60 V/cm were applied to 72, 48, 36, 24, and 18 °Brix apple juices. At all voltage levels, the lowest heating rate was observed in 72 °Brix apple juice and a similar pattern of temperature increase was shown in18-48 °Brix juice samples. System performance coefficients (SPC) under two treatment conditions (30 V/cm in 36 °Brix or 60 V/cm in 48 °Brix juice) were relatively greater than for other combinations. Meanwhile, 5-log reductions of the three foodborne pathogens were achieved after treatment for 60 s in 36 °Brix at 30 V/cm, but this same reduction was observed in 48 °Brix juice at 60 V/cm within 20 s without affecting product quality. With respect to both bactericidal efficiency and SPC values, 60 V/cm in 48 °Brix was the most effective ohmic heating treatment combination for decontaminating apple juice concentrates.

  17. Effects of sol aging on resistive switching behaviors of HfO{sub x} resistive memories

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Chih-Chieh, E-mail: cchsu@yuntech.edu.tw [Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China); Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China); Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China); Sun, Jhen-Kai; Tsao, Che-Chang; Chen, Yu-Ting [Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China)

    2017-03-01

    This work investigates effects of long-term sol-aging time on sol-gel HfO{sub x} resistive random access memories (RRAMs). A nontoxic solvent of ethanol is used to replace toxic 2-methoxyethanol, which is usually used in sol-gel processes. The top electrodes are fabricated by pressing indium balls onto the HfO{sub x} surface rather than by using conventional sputtering or evaporation processes. The maximum process temperature is limited to be 100 ℃. Therefore, influences of plasma and high temperature on HfO{sub x} film can be avoided. Under this circumstance, effects of sol aging time on the HfO{sub x} films can be more clearly studied. The current conduction mechanisms in low and high electric regions of the HfO{sub x} RRAM are found to be dominated by Ohmic conduction and trap-filled space charge limited conduction (TF-SCLC), respectively. When the sol aging time increases, the resistive switching characteristic of the HfO{sub x} layer becomes unstable and the transition voltage from Ohmic conduction to TF-SCLC is also increased. This suggests that an exceedingly long aging time will give a HfO{sub x} film with more defect states. The XPS results are consistent with FTIR analysis and they can further explain the unstable HfO{sub x} resistive switching characteristic induced by sol aging.

  18. Effects of sol aging on resistive switching behaviors of HfOx resistive memories

    Science.gov (United States)

    Hsu, Chih-Chieh; Sun, Jhen-Kai; Tsao, Che-Chang; Chen, Yu-Ting

    2017-03-01

    This work investigates effects of long-term sol-aging time on sol-gel HfOx resistive random access memories (RRAMs). A nontoxic solvent of ethanol is used to replace toxic 2-methoxyethanol, which is usually used in sol-gel processes. The top electrodes are fabricated by pressing indium balls onto the HfOx surface rather than by using conventional sputtering or evaporation processes. The maximum process temperature is limited to be 100 ℃. Therefore, influences of plasma and high temperature on HfOx film can be avoided. Under this circumstance, effects of sol aging time on the HfOx films can be more clearly studied. The current conduction mechanisms in low and high electric regions of the HfOx RRAM are found to be dominated by Ohmic conduction and trap-filled space charge limited conduction (TF-SCLC), respectively. When the sol aging time increases, the resistive switching characteristic of the HfOx layer becomes unstable and the transition voltage from Ohmic conduction to TF-SCLC is also increased. This suggests that an exceedingly long aging time will give a HfOx film with more defect states. The XPS results are consistent with FTIR analysis and they can further explain the unstable HfOx resistive switching characteristic induced by sol aging.

  19. Influences of Interface States on Resistive Switching Properties of TiOx with Different Electrodes

    Institute of Scientific and Technical Information of China (English)

    JIA Ze; WANG Lin-Kai; REN Tian-Ling

    2010-01-01

    @@ Different TiOx thin films prepared by graded or sufficient oxidization of Ti are applied with Pt or Ag electrode in metal-insulator-metal(MIM)structures for studying the properties and mechanisms of resistive switching.The differences on the mobile oxygen vacancies in TiOx films and different work functions of the electrode films result in different insulator-metal interface states,which are displayed as ohmic-like or non-ohmic contact.Based on the interface states,the electrical models for MIM devices are analyzed and extracted.The electrode-limited effect and the bulk-limited effect can be unified to explain the mechanisms for resistive switching behavior as the dominant effect respectively in various conditions.All the current-voltage curves of the four kinds of specimens measured in the experiments can be explained and proved in accordance with the theory.

  20. Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films

    Institute of Scientific and Technical Information of China (English)

    芦增星; 高兴森; 严志波; 刘俊明; 宋骁; 赵丽娜; 李忠文; 林远彬; 曾敏; 张璋; 陆旭兵; 吴素娟

    2015-01-01

    We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current–voltage (I–V ) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures (253 K), the I–V behaviors are governed by both space-charge-limited conduction (SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduc-tion switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of>298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.

  1. On the effect of neoclassical flows on intrinsic momentum in ASDEX Upgrade Ohmic L-mode plasmas

    Science.gov (United States)

    Hornsby, W. A.; Angioni, C.; Fable, E.; Manas, P.; McDermott, R.; Peeters, A. G.; Barnes, M.; Parra, F.; The ASDEX Upgrade Team

    2017-04-01

    A gyro-kinetic analysis of intrinsic rotation is presented for the ASDEX Upgrade tokamak. The gyro-kinetic turbulence code, GKW and the neoclassical transport code, NEO are coupled so that the neoclassical equilibrium distribution function is included in the background distribution function in the gyro-kinetic turbulence simulation. This implementation is benchmarked against a similar implementation in the gyro-kinetic code, GS2 (Dorland et al 2000 Phys. Rev. Lett. 85 5579) and against analytical predictions. A quasi-linear and non-linear gyro-kinetic turbulence analysis is performed on Ohmic L-mode ASDEX Upgrade plasmas showing that the symmetry breaking effects due to neoclassical background flows can produce significant toroidal momentum transport. While its magnitude is of the order of other symmetry breaking mechanisms, such as the Coriolis pinch, up–down asymmetry in the magnetic flux surfaces and E× B flow shear, the flow gradients it can sustain are appreciably smaller than the maximum gradients measured at the mid-radius of the ASDEX Upgrade tokamak core, which can be up to an order of magnitude larger. It is found that the gradient of the diamagnetic flow, and therefore the second derivatives of the density and temperature gradients are critical to the production of residual toroidal momentum flux. A quasi-linear estimate indicated that the second derivatives required to match the experimental flow gradient are up to an order of magnitude higher than the measured second derivatives. This analysis suggests that turbulent transport driven by neoclassical flows is not sufficient to explain the maximum flow gradients observed in ASDEX Upgrade.

  2. Unipolar resistive switching in cobalt titanate thin films

    Science.gov (United States)

    Thakre, Atul; Shukla, A. K.; Katiyar, R. S.; Kumar, Ashok

    2017-02-01

    We report giant resistive switching of the order of 104, long-time charge retention characteristics up to 104 s, non-overlapping SET and RESET voltages, Ohmic in low-resistance state (LRS) and space charge limited current (SCLC) mechanism in high-resistance state (HRS) properties in polycrystalline perovskite cobalt titanate (\\text{CoTiO}3∼ \\text{CTO}) thin films. Impedance spectroscopy study was carried out for both LRS and HRS states which illustrates that only bulk resistance changes after resistance switching, however, there is a small change (<10% which is in the pF range) in the bulk capacitance value in both states. These results suggest that in the LRS state current filaments break the capacitor in many small capacitors in a parallel configuration which, in turn, provides the same capacitance in both states even if there was a 90-degree change in phase angle and an order of change in the tangent loss.

  3. Investigation of voltage gradient and electrode type effects on processing time, energy consumption and product quality in production of Tomato Paste by ohmic heating

    Directory of Open Access Journals (Sweden)

    M Torkian Boldaji

    2017-05-01

    Full Text Available Introduction Thermal processing has a huge impact on the textural attribute of the final food product and texture is a major factor contributing the overall quality of food. Ohmic heating is an advanced thermal processing method in which heat is internally generated within foods by passing an alternating electric current through them. Ohmic heating can volumetrically heat the entire mass of a food system, resulting in faster heating, better quality and less energy consumption than conventional thermal processing. Gradient voltage and electrode type have high effect on ohmic heating system. Materials and Methods In this study, the effect of voltage gradient and electrode type on moisture reduction time, a/b, ΔE color indexes and energy consumption were studied. For this purpose, four levels of voltage gradients (5, 7, 9 and 11 V cm-1 and four electrode types (Aluminum, Stainless steel, Brass and Graphite was investigated by ohmic heating in tomato paste processing. Tomato used in this study was purchased from a local market. The whole tomatoes were washed, crushed and mixed in a way that a red less-viscous liquid obtained (Fig. 1. This liquid was considered as tomato samples in the remainder of the article. Ohmic cooking experiments were conducted in laboratory scale ohmic heating system consists of a power supply, a variable transformer, power analyzer, a microcomputer, digital scale (GF-6000 and thermometer (Dual inpur RTD 804U (Fig. 3. The ohmic cell had a PTF cylinder with an inner diameter of 0.05 m, a length of 0.10 m and two electrodes on both side of the cell. A hole with 3 mm diameter to insert the thermocouple was created and two holes with 5 mm diameter was created on surface of cell. One of them was used for pouring tomato puree and other for exiting steam from cell. Temperature uniformity was checked during previous heating experiments by measuring the temperatures at different locations in the test cell. Ohmic heating was

  4. Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures.

    Science.gov (United States)

    Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

    2015-12-05

    Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal-semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω(-) (1) cm(-) (1), with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed

  5. Determination of ohmic/voltage drop and factors influencing anodic overvoltage of carbon anodes in Na3AlF6-Al2O3 based melts

    Institute of Scientific and Technical Information of China (English)

    李庆余; 李劼; 田忠良; 张刚

    2003-01-01

    Experimental technique has been inadequate to anodic overvoltage measurements in aluminum electrolysis. To determine its ohmic/voltage drop precisely, a current interruption technique was modified with a high frequency digital oscilloscope, current interrupters with fast switching time, an improved cell configuration and a simulation applied to the oscillating potential decay curve. The results show that the technique can give good reproducibility for overvoltage studies. A substantial increase of anodic overvoltage is observed with graphite powder addition, metallic aluminum addition and CO bubbling in the melts.

  6. Generalized polaron ansatz for the ground state of the sub-Ohmic spin-boson model: an analytic theory of the localization transition.

    Science.gov (United States)

    Chin, Alex W; Prior, Javier; Huelga, Susana F; Plenio, Martin B

    2011-10-14

    The sub-Ohmic spin-boson model possesses a quantum phase transition at zero temperature between a localized and a delocalized phase, whose properties have so far only been extracted by numerical approaches. Here we present an extension of the Silbey-Harris variational polaron ansatz which allows us to develop an analytical theory which correctly describes a continuous transition with mean-field exponents for 0

  7. Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors

    Science.gov (United States)

    Liu, Huan; Cheng, Aijie; Lin, Zhaojun; Cui, Peng; Liu, Yan; Fu, Chen; Lv, Yuanjie; Feng, Zhihong; Luan, Chongbiao

    2017-03-01

    Using measured capacitance-voltage and current-voltage curves for the AlGaN/GaN heterostructure field-effect transistors with different source-drain spacing, the electron mobility under the gate region was obtained. By comparing mobility variation and analyzing polarization charge distribution, it is found that with device scaling, the effect of the diffused Ohmic contact metal atoms on the electron mobility is enhanced. Then, a theoretical calculation related to different scattering mechanisms was adopted and it was verified this enhanced effect is due to the enhanced polarization Coulomb field (PCF) scattering.

  8. Communication: spin-boson model with diagonal and off-diagonal coupling to two independent baths: ground-state phase transition in the deep sub-Ohmic regime.

    Science.gov (United States)

    Zhao, Yang; Yao, Yao; Chernyak, Vladimir; Zhao, Yang

    2014-04-28

    We investigate a spin-boson model with two boson baths that are coupled to two perpendicular components of the spin by employing the density matrix renormalization group method with an optimized boson basis. It is revealed that in the deep sub-Ohmic regime there exists a novel second-order phase transition between two types of doubly degenerate states, which is reduced to one of the usual types for nonzero tunneling. In addition, it is found that expectation values of the spin components display jumps at the phase boundary in the absence of bias and tunneling.

  9. High power terahertz emission from a single gate AlGaN/GaN field effect transistor with periodic Ohmic contacts for plasmon coupling

    Science.gov (United States)

    Onishi, Toshikazu; Tanigawa, Tatsuya; Takigawa, Shinichi

    2010-08-01

    We report on room temperature terahertz (THz) emission by a single, short gate AlGaN/GaN field effect transistor with grating Ohmic contacts. The fingers of metal contacts are fabricated at the nanoscale in length and spacing in order to work as a radiation coupler of electron plasmons in the THz range. Spectrum analysis revealed a broadband emission centered at 1.5 THz with a controlled polarization by the grating contacts. The measured output power is linearly increased with the drain input power and reached up to 1.8 μW.

  10. Ohmic-rectifying conversion of Ni contacts on ZnO and the possible determination of ZnO thin film surface polarity.

    Directory of Open Access Journals (Sweden)

    Kim Guan Saw

    Full Text Available The current-voltage characteristics of Ni contacts with the surfaces of ZnO thin films as well as single crystal (0001 ZnO substrate are investigated. The ZnO thin film shows a conversion from Ohmic to rectifying behavior when annealed at 800°C. Similar findings are also found on the Zn-polar surface of (0001 ZnO. The O-polar surface, however, only shows Ohmic behavior before and after annealing. The rectifying behavior observed on the Zn-polar and ZnO thin film surfaces is associated with the formation of nickel zinc oxide (Ni1-xZnxO, where x = 0.1, 0.2. The current-voltage characteristics suggest that a p-n junction is formed by Ni1-xZnxO (which is believed to be p-type and ZnO (which is intrinsically n-type. The rectifying behavior for the ZnO thin film as a result of annealing suggests that its surface is Zn-terminated. Current-voltage measurements could possibly be used to determine the surface polarity of ZnO thin films.

  11. Product formulation for ohmic heating: blanching as a pretreatment method to improve uniformity in heating of solid-liquid food mixtures.

    Science.gov (United States)

    Sarang, S; Sastry, S K; Gaines, J; Yang, T C S; Dunne, P

    2007-06-01

    The electrical conductivity of food components is critical to ohmic heating. Food components of different electrical conductivities heat at different rates. While equal electrical conductivities of all phases are desirable, real food products may behave differently. In the present study involving chicken chow mein consisting of a sauce and different solid components, celery, water chestnuts, mushrooms, bean sprouts, and chicken, it was observed that the sauce was more conductive than all solid components over the measured temperature range. To improve heating uniformity, a blanching method was developed to increase the ionic content of the solid components. By blanching different solid components in a highly conductive sauce at 100 degrees C for different lengths of time, it was possible to adjust their conductivity to that of the sauce. Chicken chow mein samples containing blanched particulates were compared with untreated samples with respect to ohmic heating uniformity at 60 Hz up to 140 degrees C. All components of the treated product containing blanched solids heated more uniformly than untreated product. In sensory tests, 3 different formulations of the blanched product showed good quality attributes and overall acceptability, demonstrating the practical feasibility of the blanching protocol.

  12. Effect of frequency and waveform on inactivation of Escherichia coli O157:H7 and Salmonella enterica Serovar Typhimurium in salsa by ohmic heating.

    Science.gov (United States)

    Lee, Su-Yeon; Ryu, Sangryeol; Kang, Dong-Hyun

    2013-01-01

    The effect of frequency of alternating current during ohmic heating on electrode corrosion, heating rate, inactivation of food-borne pathogens, and quality of salsa was investigated. The impact of waveform on heating rate was also investigated. Salsa was treated with various frequencies (60 Hz to 20 kHz) and waveforms (sine, square, and sawtooth) at a constant electric field strength of 12.5 V/cm. Electrode corrosion did not occur when the frequency exceeded 1 kHz. The heating rate of the sample was dependent on frequency up to 500 Hz, but there was no significant difference (P > 0.05) in the heating rate when the frequency was increased above 1 kHz. The electrical conductivity of the sample increased with a rise in the frequency. At a frequency of 60 Hz, the square wave produced a lower heating rate than that of sine and sawtooth waves. The heating rate between waveforms was not significantly (P > 0.05) different when the frequency was >500 Hz. As the frequency increased, the treatment time required to reduce Escherichia coli O157:H7 and Salmonella enterica serovar Typhimurium to below the detection limit (1 log CFU/g) decreased without affecting product quality. These results suggest that ohmic heating can be effectively used to pasteurize salsa and that the effect of inactivation is dependent on frequency and electrical conductivity rather than waveform.

  13. Non-Ohmic conduction in In{sub 2}O{sub 3}–Bi{sub 2}O{sub 3} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Glot, A.B., E-mail: alexglot@mixteco.utm.mx [Universidad Tecnológica de la Mixteca, Huajuapan de León, Oaxaca 69000 (Mexico); Mazurik, S.V. [Dniepropetrovsk National University, Dniepropetrovsk 49010 (Ukraine)

    2013-11-01

    The semiconductor In{sub 2}O{sub 3}–Bi{sub 2}O{sub 3} ceramics exhibit unusual behaviour: The current quasi-saturation (current limiting) in dc current–voltage characteristic is accompanied by low-frequency (∼1 Hz) current oscillations. In this paper some electrical properties of In{sub 2}O{sub 3}–Bi{sub 2}O{sub 3} ceramics are studied and a mechanism of non-Ohmic conduction in this material is suggested. The electrical conduction is controlled by the grain-boundary potential barriers. Assuming that the barrier heights at different grain boundaries in a sample are not identical, the current quasi-saturation is explained qualitatively by capture of electrons at the interface states and respective increase in the height of key barriers. A mechanism of current oscillations is related to the current quasi-saturation. An increase in the height of key barriers leads to a raise of the voltage drop at these barriers and to Joule heating of barrier regions followed by decrease in the barrier height. The suggested mechanism of non-Ohmic conduction is confirmed by the obtained experimental data.

  14. Effect of electropermeabilization by ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water and apple juice.

    Science.gov (United States)

    Park, Il-Kyu; Kang, Dong-Hyun

    2013-12-01

    The effect of electric field-induced ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water (BPW) (pH 7.2) and apple juice (pH 3.5; 11.8 °Brix) was investigated in this study. BPW and apple juice were treated at different temperatures (55°C, 58°C, and 60°C) and for different times (0, 10, 20, 25, and 30 s) by ohmic heating compared with conventional heating. The electric field strength was fixed at 30 V/cm and 60 V/cm for BPW and apple juice, respectively. Bacterial reduction resulting from ohmic heating was significantly different (Pheating at 58°C and 60°C in BPW and at 55°C, 58°C, and 60°C in apple juice for intervals of 0, 10, 20, 25, and 30 s. These results show that electric field-induced ohmic heating led to additional bacterial inactivation at sublethal temperatures. Transmission electron microscopy (TEM) observations and the propidium iodide (PI) uptake test were conducted after treatment at 60°C for 0, 10, 20, 25 and 30 s in BPW to observe the effects on cell permeability due to electroporation-caused cell damage. PI values when ohmic and conventional heating were compared were significantly different (Pheating can more effectively reduce bacterial populations at reduced temperatures and shorter time intervals, especially in acidic fruit juices such as apple juice. Therefore, loss of quality can be minimized in a pasteurization process incorporating ohmic heating.

  15. Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

    Science.gov (United States)

    Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun; Kim, Tae Geun

    2015-05-01

    This paper reports the bipolar resistive switching characteristics of TaNx-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from -0.82 V to -0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>105 s) and pulse-switching endurance (>106 cycles) properties. These results indicate that TaNx-based ReRAM devices have a potential for future nonvolatile memory devices.

  16. Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr [School of Electrical Engineering, Anam-dong 5ga, Sungbuk-gu, Seoul 136-701 (Korea, Republic of)

    2015-05-18

    This paper reports the bipolar resistive switching characteristics of TaN{sub x}-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10{sup 5 }s) and pulse-switching endurance (>10{sup 6} cycles) properties. These results indicate that TaN{sub x}-based ReRAM devices have a potential for future nonvolatile memory devices.

  17. Fully-depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holland, Stephen E.; Groom, Donald E.; Palaio, Nick P.; Stover, Richard J.; Wei, Mingzhi

    2002-03-28

    Charge-coupled devices (CCD's) have been fabricated on high-resistivity silicon. The resistivity, on the order of 10,000 {Omega}-cm, allows for depletion depths of several hundred microns. Fully-depleted, back-illuminated operation is achieved by the application of a bias voltage to a ohmic contact on the wafer back side consisting of a thin in-situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for good short wavelength response, while the relatively large depleted thickness results in good near-infrared response.

  18. NiO removal of Ni/Au Ohmic contact to p-GaN after annealing

    Institute of Scientific and Technical Information of China (English)

    林孟喆; 曹青; 颜廷静; 张书明; 陈良惠

    2009-01-01

    The Ni/Au contact was treated with oxalic acid after annealing in O2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.

  19. Schottky junction/ohmic contact behavior of a nanoporous TiO(2) thin film photoanode in contact with redox electrolyte solutions.

    Science.gov (United States)

    Kaneko, Masao; Ueno, Hirohito; Nemoto, Junichi

    2011-01-01

    The nature and photoelectrochemical reactivity of nanoporous semiconductor electrodes have attracted a great deal of attention. Nanostructured materials have promising capabilities applicable for the construction of various photonic and electronic devices. In this paper, a mesoporous TiO(2) thin film photoanode was soaked in an aqueous methanol solution using an O(2)-reducing Pt-based cathode in contact with atmospheric air on the back side. It was shown from distinct photocurrents in the cyclic voltammogram (CV) that the nanosurface of the mesoporous n-TiO(2) film forms a Schottky junction with water containing a strong electron donor such as methanol. Formation of a Schottky junction (liquid junction) was also proved by Mott-Schottky plots at the mesoporous TiO(2) thin film photoanode, and the thickness of the space charge layer was estimated to be very thin, i.e., only 3.1 nm at -0.1 V vs Ag/AgCl. On the other hand, the presence of [Fe(CN)(6)](4-) and the absence of methanol brought about ohmic contact behavior on the TiO(2) film and exhibited reversible redox waves in the dark due to the [Fe(CN)(6)](4-/3-) couple. Further studies showed that multiple Schottky junctions/ohmic contact behavior inducing simultaneously both photocurrent and overlapped reversible redox waves was found in the CV of a nanoporous TiO(2) photoanode soaked in an aqueous redox electrolyte solution containing methanol and [Fe(CN)(6)](4-). That is, the TiO(2) nanosurface responds to [Fe(CN)(6)](4-) to give ohmic redox waves overlapped simultaneously with photocurrents due to the Schottky junction. Additionally, a second step photocurrent generation was observed in the presence of both MeOH and [Fe(CN)(6)](4-) around the redox potential of the iron complex. It was suggested that the iron complex forms a second Schottky junction for which the flat band potential (E(fb)) lies near the redox potential of the iron complex.

  20. Schottky junction/ohmic contact behavior of a nanoporous TiO2 thin film photoanode in contact with redox electrolyte solutions

    Directory of Open Access Journals (Sweden)

    Masao Kaneko

    2011-02-01

    Full Text Available The nature and photoelectrochemical reactivity of nanoporous semiconductor electrodes have attracted a great deal of attention. Nanostructured materials have promising capabilities applicable for the construction of various photonic and electronic devices. In this paper, a mesoporous TiO2 thin film photoanode was soaked in an aqueous methanol solution using an O2-reducing Pt-based cathode in contact with atmospheric air on the back side. It was shown from distinct photocurrents in the cyclic voltammogram (CV that the nanosurface of the mesoporous n-TiO2 film forms a Schottky junction with water containing a strong electron donor such as methanol. Formation of a Schottky junction (liquid junction was also proved by Mott–Schottky plots at the mesoporous TiO2 thin film photoanode, and the thickness of the space charge layer was estimated to be very thin, i.e., only 3.1 nm at −0.1 V vs Ag/AgCl. On the other hand, the presence of [Fe(CN6]4− and the absence of methanol brought about ohmic contact behavior on the TiO2 film and exhibited reversible redox waves in the dark due to the [Fe(CN6]4−/3− couple. Further studies showed that multiple Schottky junctions/ohmic contact behavior inducing simultaneously both photocurrent and overlapped reversible redox waves was found in the CV of a nanoporous TiO2 photoanode soaked in an aqueous redox electrolyte solution containing methanol and [Fe(CN6]4−. That is, the TiO2 nanosurface responds to [Fe(CN6]4− to give ohmic redox waves overlapped simultaneously with photocurrents due to the Schottky junction. Additionally, a second step photocurrent generation was observed in the presence of both MeOH and [Fe(CN6]4− around the redox potential of the iron complex. It was suggested that the iron complex forms a second Schottky junction for which the flat band potential (Efb lies near the redox potential of the iron complex.

  1. Resistance-resistant antibiotics.

    Science.gov (United States)

    Oldfield, Eric; Feng, Xinxin

    2014-12-01

    New antibiotics are needed because drug resistance is increasing while the introduction of new antibiotics is decreasing. We discuss here six possible approaches to develop 'resistance-resistant' antibiotics. First, multitarget inhibitors in which a single compound inhibits more than one target may be easier to develop than conventional combination therapies with two new drugs. Second, inhibiting multiple targets in the same metabolic pathway is expected to be an effective strategy owing to synergy. Third, discovering multiple-target inhibitors should be possible by using sequential virtual screening. Fourth, repurposing existing drugs can lead to combinations of multitarget therapeutics. Fifth, targets need not be proteins. Sixth, inhibiting virulence factor formation and boosting innate immunity may also lead to decreased susceptibility to resistance. Although it is not possible to eliminate resistance, the approaches reviewed here offer several possibilities for reducing the effects of mutations and, in some cases, suggest that sensitivity to existing antibiotics may be restored in otherwise drug-resistant organisms.

  2. Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

    Energy Technology Data Exchange (ETDEWEB)

    Yang, W.F. [Xiamen University, Department of Physics, Xiamen (China); National University of Singapore, Department of Materials Science and Engineering, Singapore (Singapore); Liu, Z.G.; Xie, Y.N.; Cai, J.F.; Liu, S.; Wu, Z.Y. [Xiamen University, Department of Physics, Xiamen (China); Gong, H. [National University of Singapore, Department of Materials Science and Engineering, Singapore (Singapore)

    2012-06-15

    This letter presents a holographic photonic crystal (H-PhC) Al-doped ZnO (AZO) transparent Ohmic contact layer on p-GaN to increase the light output of GaN-based LEDs without destroying the p-GaN. The operating voltage of the PhC LEDs at 20 mA was almost the same as that of the typical planar AZO LEDs. While the resultant PhC LED devices exhibited significant improvements in light extraction, up to 1.22 times that of planar AZO LEDs without PhC integration. Temperature dependence of the integrated photoluminescence intensity indicates that this improvement can be attributed to the increased extraction efficiency due to the surface modification. These results demonstrate that the surface-treated AZO layer by H-PhCs is suitable for fabricating high-brightness GaN-based LEDs. (orig.)

  3. A novel type of ultra fast and ultra soft recovery SiGe/Si heterojunction power diode with an ideal ohmic contact

    Institute of Scientific and Technical Information of China (English)

    Ma Li; Gao Yong; Wang Cai-Lin

    2004-01-01

    A novel type of p+ (SiGe)-n--n+ heterojunction switching power diode with high-speed capability is presented to overcome the drawbacks of existing power diodes. The improvement is achieved by using a p+-n+ mosaic layer electrons and holes simultaneously. Compared with conventional p+(SiGe)-n--n+ diodes, the ideal ohmic contact p+ (SiGe)-n--n+ diodes have about one third of the reverse recovery time and a half of peak reverse recovery current.Furthermore, the softness factor increases nearly two times and the leakage current decreases 1-2 orders of magnitude.These improvements are achieved without resorting special process step to lower the carrier lifetime and thus the devices could be easily integrated into power ICs. The Ge percentage content of p+ (SiGe) layer is an important parameter for the optimal device design.

  4. Velocity slip effects on heat and mass fluxes of MHD viscous–Ohmic dissipative flow over a stretching sheet with thermal radiation

    Directory of Open Access Journals (Sweden)

    M. Kayalvizhi

    2016-06-01

    Full Text Available In the present article, we discussed the velocity slip effects on the heat and mass fluxes of a viscous electrically conducting fluid flow over a stretching sheet in the presence of viscous dissipation, Ohmic dissipation and thermal radiation. A system of governing nonlinear PDEs is converted into a set of nonlinear ODEs by suitable similarity transformations. The numerical and analytical solutions are presented for the governing non-dimensional ODEs using shooting method and hypergeometric function respectively. The results are discussed for skin friction coefficient, concentration field, non-dimensional wall temperature and non-dimensional wall concentration. The non-dimensional wall concentration increases with slip and magnetic parameters and decreases with Schmidt number. Furthermore, comparisons are found to be good with bench mark solutions.

  5. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

    Science.gov (United States)

    Takhar, Kuldeep; Akhil Kumar, S.; Meer, Mudassar; Upadhyay, Bhanu B.; Upadhyay, Pankaj; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar

    2016-08-01

    Here we have demonstrated AlGaN/GaN based high electron mobility transistors with scaled source extension regions using non-alloyed ohmic contacts to two-dimensional electron gas (2-DEG). We show that the scaling of the extension region has profound impact on the device radio frequency (RF) response and the performance peaks at an optimum extension region length. The unity current gain (fT) and power gain frequencies (fmax) have been found to be 79.6 and 96.2 GHz, respectively, for a 260 nm gate length (Lg) and 120 nm extension region length. The devices show a very large fT × Lg product of 20.7 GHz μm at the optimum extension length. The presence of the optimum extension length and the equivalence of source extension and gate length scaling may serve as additional design rules for high performance HEMTs.

  6. Numerical Studies of Two-Fluid Axisymmetric Steady-States with Flow in Ohmic NSTX-like Plasmas

    Science.gov (United States)

    Ferraro, Nathaniel; Jardin, Stephen

    2008-11-01

    Axisymmetric steady-states of the resistive two-fluid equations, including flow and gyroviscosity, are obtained by evolving these nonlinear equations from an initial ideal MHD equilibrium using the code M3D-C^1 [1], which has now been extended to toroidal geometry. Steady-states for high-β, inductively driven discharges in diverted NSTX geometries are studied. Excellent agreement with theoretical predictions of cross-surface Pfirsch-Schlüter flows in the axisymmetric steady-states is found. The dependence of flow velocities with resistivity is explored. It is found that in the two-fluid model, the statistical steady-state may be a fixed point, a limit cycle, or chaotic, depending on the parameters. Two-fluid terms lead to a preferred direction of toroidal rotation. The inclusion of gyroviscosity is observed to alter the character of the steady-state. The three-dimensional linear stability of simple equilibria in this two-fluid model are also explored using M3D-C^1 [2]. [1] N. Ferraro, S. Jardin. Phys. Plasmas 13:092101 (2006). [2] S. Jardin, N. Ferraro, J. Breslau, J. Chen, and M. Chance. Initial results for linear 3D Toroidal Two-Fluid stability using M3D-C1. APS DPP Conference, Dallas, TX (2008).

  7. Antibiotic Resistance

    Science.gov (United States)

    ... lives. But there is a growing problem of antibiotic resistance. It happens when bacteria change and become able ... resistant to several common antibiotics. To help prevent antibiotic resistance Don't use antibiotics for viruses like colds ...

  8. Drug Resistance

    Science.gov (United States)

    HIV Treatment Drug Resistance (Last updated 3/2/2017; last reviewed 3/2/2017) Key Points As HIV multiplies in the ... the risk of drug resistance. What is HIV drug resistance? Once a person becomes infected with HIV, ...

  9. Unipolar resistive switching behavior in Dy{sub 2}O{sub 3} films for nonvolatile memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Her, Jim-Long [Division of Natural Science, Center for General Education, Chang Gung University, Taoyuan 333, Taiwan (China); Pan, Tung-Ming, E-mail: tmpan@mail.cgu.edu.tw [Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan (China); Lu, Chih-Hung [Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan (China)

    2012-06-30

    In this article, we report the forming-free resistive switching behavior of a Ru/Dy{sub 2}O{sub 3}/TaN memory device incorporating a Dy{sub 2}O{sub 3} thin film fabricated entirely through processing at room temperature. We used X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy to investigate the structural and chemical features of the Dy{sub 2}O{sub 3} film. The dominant conduction mechanisms in the low- and high-resistance states were ohmic behavior and Poole-Frenkel emission, respectively. The Ru/Dy{sub 2}O{sub 3}/TaN memory device exhibited a high resistance ratio and provided nondestructive readout and reliable data retention. This memory device has a great potential for application in nonvolatile resistive switching memory. - Highlights: Black-Right-Pointing-Pointer The forming-free resistive switching behavior in the Ru/Dy{sub 2}O{sub 3}/TaN device was investigated. Black-Right-Pointing-Pointer The conduction mechanisms of the device are ohmic behavior and Poole-Frenkel emission. Black-Right-Pointing-Pointer This memory device exhibits good electrical characteristics.

  10. Restoration of the plasma discharge during density limit disruptions in the T-10 tokamak using electron cyclotron heating and ohmic power supply system

    Science.gov (United States)

    Savrukhin, P. V.; Shestakov, E. A.

    2016-11-01

    Experiments in the T-10 tokamak [Alikaev et al., Plasma Phys. Controlled Fusion 30, 381 (1988)] have demonstrated the possibility of control of the plasma current and prevention of formation of the non-thermal (Eγ > 150 keV) electron beams after an energy quench at the density limit disruption using electron cyclotron heating (ECRH) and controlled operation of the Ohmic power supply system. Quasi-stable plasma operation with repetitive sawtooth oscillations can be restored after an energy quench using high auxiliary power Pec > 2-5 Poh. Optimal conditions of the plasma discharge recovery after an energy quench using auxiliary heating are identified. At high auxiliary power, restoration of the plasma discharge can be provided with the location of the EC resonance zone within the whole plasma cross section. The auxiliary power required for discharge restoration is minimal when the power is deposited around the m = 2, n = 1 magnetic island (here m and n poloidal and toroidal wave numbers). The threshold ECRH power increases linearly with plasma current. Prevention of the non-thermal electron beams during density limit disruption is associated with stabilization of bursts of the magnetohydrodynamic modes, creation of the saturated magnetic islands, and heating of the background plasma using ECRH. Plasma discharge recovery after an energy quench in a tokamak reactor using auxiliary heating and controllable reduction of the plasma current is discussed.

  11. The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

    Science.gov (United States)

    Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

    2010-12-28

    Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

  12. The effect of correlations on the non-ohmic behavior of the small-polaron hopping conductivity in 1D and 3D disordered systems

    Energy Technology Data Exchange (ETDEWEB)

    Dimakogianni, M; Triberis, G P, E-mail: gtriber@phys.uoa.g [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, GR-15784 Zografos, Athens (Greece)

    2010-09-08

    According to percolation theory the investigation of charge transport in disordered systems is equivalent to the study of the possibility of the passage of the carriers through a random network of impedances which interconnect the different lattice sites. When the site energies are not the same, the energy of a site affects the incoming as well as the outgoing impedances connected to the given site and this gives rise to correlations between neighboring impedances. This new condition characterizes the transport process and imposes the evaluation of the average number of sites accessible by a bond from a given site for all possible configurations of sites that satisfy the percolation condition. The generalized molecular crystal model, appropriate for the study of small-polaron hopping transport in disordered systems, and the Kubo formula permit the evaluation of these impedances. Taking correlations into account, theoretical percolation considerations applicable to one-dimensional and three-dimensional disordered systems, lead to analytical expressions for the temperature and electric field dependence of the DC conductivity at high (multi-phonon-assisted hopping) and low (few-phonon-assisted hopping) temperatures. The theoretical analysis reveals the effect of correlations on the non-ohmic behavior of the small-polaron hopping conductivity and permits the evaluation of the maximum hopping distance. Quantitative estimates of this effect are presented comparing the theoretical results, including correlations with those ignoring them, previously reported, applying them to recent experimental data for a wide temperature range and from low up to moderate electric fields.

  13. Variational dynamics of the sub-Ohmic spin-boson model on the basis of multiple Davydov D{sub 1} states

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lu [Division of Materials Science, Nanyang Technological University, Singapore 639798 (Singapore); Department of Physics, Zhejiang University, Hangzhou 310027 (China); Chen, Lipeng; Zhao, Yang, E-mail: YZhao@ntu.edu.sg [Division of Materials Science, Nanyang Technological University, Singapore 639798 (Singapore); Zhou, Nengji [Department of Physics, Hangzhou Normal University, Hangzhou 310046 (China)

    2016-01-14

    Dynamics of the sub-Ohmic spin-boson model is investigated by employing a multitude of the Davydov D{sub 1} trial states, also known as the multi-D{sub 1} Ansatz. Accuracy in dynamics simulations is improved significantly over the single D{sub 1} Ansatz, especially in the weak system-bath coupling regime. The reliability of the multi-D{sub 1} Ansatz for various coupling strengths and initial conditions is also systematically examined, with results compared closely with those of the hierarchy equations of motion and the path integral Monte Carlo approaches. In addition, a coherent-incoherent phase crossover in the nonequilibrium dynamics is studied through the multi-D{sub 1} Ansatz. The phase diagram is obtained with a critical point s{sub c} = 0.4. For s{sub c} < s < 1, the coherent-to-incoherent crossover occurs at a certain coupling strength, while the coherent state recurs at a much larger coupling strength. For s < s{sub c}, only the coherent phase exists.

  14. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

    Institute of Scientific and Technical Information of China (English)

    韩超; 张玉明; 宋庆文; 汤晓燕; 张义门; 郭辉; 王悦湖

    2015-01-01

    This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.%Al. The specific contact resistance (SCR) is obtained to be as low as 2.6 × 10−6Ω·cm2 for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000◦C. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3SiC2 layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing.

  15. Study of Scrape-Off-Layer Width in Ohmic and Lower Hybrid Wave Heated Double-Null Divertor Plasma in EAST%Study of Scrape-Off-Layer Width in Ohmic and Lower Hybrid Wave Heated Double-Null Divertor Plasma in EAST

    Institute of Scientific and Technical Information of China (English)

    王亮; 刘鹏; 蒋敏; 熊豪; 万宝年; 高翔; 郭后扬; 胡立群; 吴振伟; 朱思铮; 罗广南; 徐国盛; 常加峰; 张炜; 颜宁; 丁斯晔; 刘少承; 明廷凤; 汪惠乾

    2011-01-01

    Edge profiles in Ohmic and lower hybrid (LH) wave heated discharges in EAST are presented. A comparison of the measured profiles is made with those from the theoretical prediction for the scrape-off-layer (SOL) width. The edge plasma parameters are diagnosed by a triple probe divertor diagnostic system and fast reciprocating probes at the outer mid-plane. The experimental results show that the SOL width of double-null (DN) divertor plasmas in EAST appears to exhibit a negative dependence on the power crossing the separatrix, which is consistent with the collisional SOL scalings of JET and Alcator C-Mod. This will provide useful information for extrapolation to the ITER SOL width scaling for power deposition.

  16. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    L M Kukreja; A K Das; P Misra

    2009-06-01

    Six decades of research on ZnO has recently sprouted a new branch in the domain of resistive random access memories. Highly resistive and c-axis oriented ZnO thin films were grown by us using d.c. discharge assisted pulsed laser deposition on Pt/Ti/SiO2/Si substrates at room temperature. The resistive switching characteristics of these films were studied in the top-bottom configuration using current–voltage measurements at room temperature. Reliable and repeated switching of the resistance of ZnO thin films was obtained between two well defined states of high and low resistance with a narrow dispersion and small switching voltages. Resistance ratios of the high resistance state to low resistance state were found to be in the range of 2–5 orders of magnitude up to 20 test cycles. The conduction mechanism was found to be dominated by the Ohmic behaviour in low resistance states, while Poole–Frenkel emission was found to dominate in high resistance state. The achieved characteristics of the resistive switching in ZnO thin films seem to be promising for nonvolatile memory applications.

  17. Understanding Electrical Conduction States in WO3 Thin Films Applied for Resistive Random-Access Memory

    Science.gov (United States)

    Ta, Thi Kieu Hanh; Pham, Kim Ngoc; Dao, Thi Bang Tam; Tran, Dai Lam; Phan, Bach Thang

    2016-05-01

    The electrical conduction and associated resistance switching mechanism of top electrode/WO3/bottom electrode devices [top electrode (TE): Ag, Ti; bottom electrode (BE): Pt, fluorine-doped tin oxide] have been investigated. The direction of switching and switching ability depended on both the top and bottom electrode material. Multiple electrical conduction mechanisms control the leakage current of such switching devices, including trap-controlled space-charge, ballistic, Ohmic, and Fowler-Nordheim tunneling effects. The transition between electrical conduction states is also linked to the switching (SET-RESET) process. This is the first report of ballistic conduction in research into resistive random-access memory. The associated resistive switching mechanisms are also discussed.

  18. Electric-field effects in resistive oxides: facts and artifacts

    Directory of Open Access Journals (Sweden)

    Reisner G. M.

    2013-01-01

    Full Text Available Striking non-linear conductivity effects induced by surprisingly low electric-fields in charge-ordered oxides, were reported variously as dielectric breakdown, charge-order collapse, depinning of charge-density-waves or other electronic effects. Our pulsed and d.c. I-V measurements on resistive oxides show that non-linear conductivity of electronic origin at low electric-fields is a rare phenomenon. In the majority of cases we detected no deviations from linearity in pulsed I-V characteristics under fields up to E ~ 500 V/cm. Current-controlled negative-differential-resistance (NDR and hysteresis were found in d.c. measurements at fields that decrease with increasing temperatures, a behavior typical of Joule heating in materials with negative temperature coefficient of resistivity. For the d.c. I-V characteristics of our samples exhibiting NDR, we found a rather unexpected correlation between ρ(Em - the resistivity at maximum field (at the onset of NDR and ρ(E=0 – the ohmic resistivity. The data points for ρ(Em versus ρ(E=0 obtained from such characteristics of 13 samples (8 manganites, 4 nickelates and one multiferroic at various ambient temperatures, plotted together on a log-log scale, follow closely a linear dependence with slope one that spans more than five orders of magnitude. This dependence is reproduced by several simple models.

  19. Antimicrobial Resistance

    Science.gov (United States)

    ... emergence and spread of antibacterial resistance, including optimal use of antibiotics in both humans and animals. A global action plan on antimicrobial resistance was adopted by Member States at the ...

  20. Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal

    Science.gov (United States)

    Hsu, C. C.; Chou, C. H.; Wang, S. Y.; Chi, W. C.; Chien, C. H.; Luo, G. L.

    2015-09-01

    In this study, we developed an Ohmic contact structure to an in situ n+-Ge film that has an ultralow specific contact resistivity of [(6.8 ±2.1 ) ×10-8 Ωṡcm2] . This structure was developed by introducing a PtGe alloy as the contact metal. We observed that Ohmic contact behavior can be achieved with several other metals, and the contact resistance is related to the work function of the metal. A physical model of the band diagram was created for the Schottky tunneling width, which can provide insight into the validation and explanation of work function-dependent specific contact resistivity. Dopant segregation at the interface and increased interface roughness induced by the formation of the alloy are crucial in further reducing the specific contact resistivity. As a result, a stable PtGe alloy and high doping concentration in Ge are critical in pursuing a lower contact resistance for a Ge n-channel device.

  1. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    Science.gov (United States)

    Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

    2016-06-01

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  2. Bipolar resistive switching behaviours in ZnMn2O4 film deposited on p+-Si substrate by chemical solution deposition

    Indian Academy of Sciences (India)

    Jiwen Xu; Zupei Yang; Yupei Zhang; Xiaowen Zhang; Hua Wang

    2014-12-01

    ZnMn2O4 active layer for resistance random access memory (RRAM) was deposited on p+-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p+-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 102 and long retention times of > 105 s. The conduction mechanism of the Ag/ZnMn2O4/p+-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm’s law, trap-filled-limited and Child’s law conduction procedure at room temperature.

  3. Soret-Dufour Effects on Hydromagnetic Non-Darcy Convective-Radiative Heat and Mass Transfer over a Stretching Sheet in Porous Medium with Viscous Dissipation and Ohmic Heating

    Directory of Open Access Journals (Sweden)

    Dulal Pal

    2014-01-01

    Full Text Available The present study is devoted to investigate the effects of Soret and Dufour on the mixed convection flow, heat and mass transfer over a stretching sheet in the presence of viscous dissipation, Ohmic heating, thermal radiation in porous medium. Numerical solutions for the coupled governing equations are obtained by using the fifth-order Runge-Kutta-Fehlberg method with shooting technique. Important features of flow, heat and mass transfer characteristics for different values of the physical parameters are analyzed and discussed. Numerical results reveal that the magnetic field and inertia coefficient reduce the skin friction but reverse effects are seen on local Nusselt number.

  4. Camptothecin resistance

    DEFF Research Database (Denmark)

    Brangi, M; Litman, Thomas; Ciotti, M;

    1999-01-01

    The mitoxantrone resistance (MXR) gene encodes a recently characterized ATP-binding cassette half-transporter that confers multidrug resistance. We studied resistance to the camptothecins in two sublines expressing high levels of MXR: S1-M1-80 cells derived from parental S1 colon cancer cells...... and MCF-7 AdVp3,000 isolated from parental MCF-7 breast cancer cells. Both cell lines were 400- to 1,000-fold more resistant to topotecan, 9-amino-20(S)-camptothecin, and the active metabolite of irinotecan, 7-ethyl-10-hydroxycamptothecin (SN-38), than their parental cell lines. The cell lines...... demonstrated much less resistance to camptothecin and to several camptothecin analogues. Reduced accumulation and energy-dependent efflux of topotecan was demonstrated by confocal microscopy. A significant reduction in cleavable complexes in the resistant cells could be observed after SN-38 treatment...

  5. Resistive Tearing Instability in Electron-MHD: Application to Neutron Star Crusts

    CERN Document Server

    Gourgouliatos, Konstantinos N

    2016-01-01

    We study a resistive tearing instability developing in a system evolving through the combined effect of Hall drift in the Electron-MHD limit and Ohmic dissipation. We explore first the exponential growth of the instability in the linear case and we find the fastest growing mode, the corresponding eigenvalues and dispersion relation. The instability growth rate scales as $\\gamma \\propto B^{2/3} \\sigma^{-1/3}$ where $B$ is the magnetic field and $\\sigma$ the electrical conductivity. We confirm the development of the tearing resistive instability in the fully non-linear case, in a plane parallel configuration where the magnetic field polarity reverses, through simulations of systems initiating in Hall equilibrium with some superimposed perturbation. Following a transient phase, during which there is some minor rearrangement of the magnetic field, the perturbation grows exponentially. Once the instability is fully developed the magnetic field forms the characteristic islands and X-type reconnection points, where ...

  6. Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor

    Science.gov (United States)

    Gul, Fatih; Efeoglu, Hasan

    2017-01-01

    In this study, a direct-current reactive sputtered Al/ZnO/Al-based memristor device was fabricated and its resistive switching (RS) characteristics investigated. The optical and structural properties were confirmed by using UV-vis spectrophotometry and x-ray diffraction, respectively. The memristive and resistive switching characteristics were determined using time dependent current-voltage (I-V-t) measurements. The typical pinched hysteresis I-V loops of a memristor were observed. In addition, the device showed forming-free, uniform and bipolar RS behavior. The low electric field region exhibited ohmic conduction, while the Schottky emission (SE) was found to be the dominant conduction mechanism in the high electric field region. A weak Poole-Frenkel (PF) emission also appeared. In conclusion, it was suggested that the SE and PF mechanisms were related to the oxygen vacancies in the ZnO.

  7. Contact resistance and V-I characteristics in a Ag-doped Bi-Sr-Ca-Cu-O superconductor

    Science.gov (United States)

    Shimizu, Noriyuki; Michishita, Kazuo; Higashida, Yutaka; Yokoyama, Hisanori; Hayami, Yumi

    1989-11-01

    Contact resistance and V-I characteristics were investigated in Ag-doped and undoped Bi-Sr-Ca-Cu-O bulk samples prepared by the floating-zone method. In undoped samples, with increasing current pulse width, rapidity of voltage rise in V-I characteristics increases and J(c) decreases. The contact resistance is nonohmic and temperature dependence is semiconductorlike. In an Ag-doped sample, rapidity of voltage rise and J(c) are not influenced by pulse width, and deviation of J(c) among samples is small. The ohmic contact resistance has metallike temperature dependence, and its value is less than 1/500 of that in an undoped sample.

  8. Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Yogesh; Pavunny, Shojan P.; Katiyar, Ram S., E-mail: rkatiyar@hpcf.upr.edu [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00936-8377 (United States); Fachini, Esteban [General Studies College, University of Puerto Rico, San Juan, Puerto Rico 00931 (United States); Scott, James F. [Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB0 3HE (United Kingdom)

    2015-09-07

    We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO{sub 3} (a-LHO) thin films for non-volatile resistive random access memory applications. Nonpolar resistive switching (RS) was achieved in Pt/a-LHO/Pt memory cells with all four possible RS modes (i.e., positive unipolar, positive bipolar, negative unipolar, and negative bipolar) having high R{sub ON}/R{sub OFF} ratios (in the range of ∼10{sup 4}–10{sup 5}) and non-overlapping switching voltages (set voltage, V{sub ON} ∼ ±3.6–4.2 V and reset voltage, V{sub OFF} ∼ ±1.3–1.6 V) with a small variation of about ±5–8%. Temperature dependent current-voltage (I–V) characteristics indicated the metallic conduction in low resistance states (LRS). We believe that the formation (set) and rupture (reset) of mixed conducting filaments formed out of oxygen vacancies and metallic Ho atoms could be responsible for the change in the resistance states of the memory cell. Detailed analysis of I–V characteristics further corroborated the formation of conductive nanofilaments based on metal-like (Ohmic) conduction in LRS. Simmons-Schottky emission was found to be the dominant charge transport mechanism in the high resistance state.

  9. Antibiotic Resistance

    DEFF Research Database (Denmark)

    Munck, Christian

    morbidity and mortality as well as an increase in the cost of treatment. Understanding how bacteria respond to antibiotic exposure gives the foundations for a rational approach to counteract antimicrobial resistance. In the work presented in this thesis, I explore the two fundamental sources...... of antimicrobial resistance: (1) adaptive mutations and (2) horizontal acquisition of resistance genes from antibiotic gene reservoirs. By studying the geno- and phenotypic changes of E. coli in response to single and drug-pair exposures, I uncover the evolutionary trajectories leading to adaptive resistance. I...... to rationally design drug combinations that limit the evolution of antibiotic resistance due to counteracting evolutionary trajectories. My results highlight that an in-depth knowledge about the genetic responses to the individual antimicrobial compounds enables the prediction of responses to drug combinations...

  10. Comparative investigation of unipolar resistance switching effect of Pt/Mg{sub 0.6}Zn{sub 0.4}O/Pt devices with different electrode patterns for nonvolatile memory application

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xinman [South China Normal University, Institute of Optoelectronic Materials and Technology, Guangzhou (China); Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Guangzhou (China); Wu, Guangheng; Hu, Wei; Zhou, Hong; Bao, Dinghua [Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Guangzhou (China)

    2012-08-15

    Electrically induced unipolar resistance switching effects of Mg{sub 0.6}Zn{sub 0.4}O thin films with two top Pt electrodes (MZO-T) and top and bottom Pt electrodes (MZO-B) were demonstrated and compared for nonvolatile memory applications. The obtained resistance ratios of high-resistance states (HRS) to low-resistance states (LRS) for MZO-B and MZO-T devices were above seven and four orders of magnitude, respectively, and exhibited a slight degradation with voltage. For both the devices, the conduction mechanisms were dominated by ohmic conduction in LRS and trap-controlled space charge limited current in HRS. Furthermore, a filamentary model was applied to explain the switching behaviors for both the devices considering the asymmetric interface defects and film thickness. The results also suggest that resistance switching behaviors can be regulated by interface defect engineering. (orig.)

  11. Lantibiotic resistance.

    Science.gov (United States)

    Draper, Lorraine A; Cotter, Paul D; Hill, Colin; Ross, R Paul

    2015-06-01

    The dramatic rise in the incidence of antibiotic resistance demands that new therapeutic options will have to be developed. One potentially interesting class of antimicrobials are the modified bacteriocins termed lantibiotics, which are bacterially produced, posttranslationally modified, lanthionine/methyllanthionine-containing peptides. It is interesting that low levels of resistance have been reported for lantibiotics compared with commercial antibiotics. Given that there are very few examples of naturally occurring lantibiotic resistance, attempts have been made to deliberately induce resistance phenotypes in order to investigate this phenomenon. Mechanisms that hinder the action of lantibiotics are often innate systems that react to the presence of any cationic peptides/proteins or ones which result from cell well damage, rather than being lantibiotic specific. Such resistance mechanisms often arise due to altered gene regulation following detection of antimicrobials/cell wall damage by sensory proteins at the membrane. This facilitates alterations to the cell wall or changes in the composition of the membrane. Other general forms of resistance include the formation of spores or biofilms, which are a common mechanistic response to many classes of antimicrobials. In rare cases, bacteria have been shown to possess specific antilantibiotic mechanisms. These are often species specific and include the nisin lytic protein nisinase and the phenomenon of immune mimicry.

  12. The role of contact resistance in graphene field-effect devices

    Science.gov (United States)

    Giubileo, Filippo; Di Bartolomeo, Antonio

    2017-08-01

    The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.

  13. Transparent bipolar resistive switching memory on a flexible substrate with indium-zinc-oxide electrodes

    Science.gov (United States)

    Yeom, Seung-Won; Ha, Hyeon Jun; Park, Junsu; Shim, Jae Won; Ju, Byeong-Kwon

    2016-12-01

    We fabricated transparent indium zinc oxide (IZO)/TiO2/IZO devices on flexible polyethylene phthalate (PET) substrates. These devices demonstrate bipolar resistive switching behavior, exhibit a transmittance greater than 80 % for visible light, and have stable resistive switching properties, including long retention and good endurance. In addition, the devices were investigated based on their temperature dependence; the results show metallic properties in the low-resistance state (LRS) and semiconducting properties in the high-resistance state (HRS). The conduction mechanism for resistive switching in our device was well-fitted with Ohmic conduction in the LRS and Poole-Frenkel emission in the HRS. The mechanism could be explained by the formation and the rupture of the conduction paths formed by the movement of oxygen ions and vacancies. Moreover, acute bending of the devices did not affect the memory characteristics because of the pliability of both the IZO electrodes and the thin oxide layer. These results indicate potential applications as resistive random access memories in future flexible, transparent electronic devices.

  14. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

    Science.gov (United States)

    Han, Chao; Zhang, Yu-Ming; Song, Qing-Wen; Tang, Xiao-Yan; Zhang, Yi-Men; Guo, Hui; Wang, Yue-Hu

    2015-11-01

    This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.% Al. The specific contact resistance (SCR) is obtained to be as low as 2.6 × 10-6 Ω·cm2 for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000 °C. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3SiC2 layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing. Project supported by the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), the National Natural Science Foundation of China (Grant No. 61234006), the Natural Science Foundation of ShaanXi Province, China (Grant No. 2013JQ8012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), and the Specific Project of the Core Devices, China (Grant No. 2013ZX0100100-004).

  15. Resident resistance.

    Science.gov (United States)

    Price, J L; Cleary, B

    1999-01-01

    Clearly, faculty must work hard with residents to explore the nature of their resistance to a program's learning and growth opportunities. Initial steps to a deeper, more effective, and longer-lasting change process must be pursued. If resident resistance is mishandled or misunderstood, then learning and professional growth may be sidetracked and the purposes of residency training defeated. Listening to the whole person of the resident and avoiding the trap of getting caught up in merely responding to select resident behaviors that irritate us is critical. Every faculty member in the family practice residency program must recognize resistance as a form of defense that cannot immediately be torn down or taken away. Resident defenses have important purposes to play in stress reduction even if they are not always healthy. Residents, especially interns, use resistance to avoid a deeper and more truthful look at themselves as physicians. A family practice residency program that sees whole persons in their residents and that respects resident defenses will effectively manage the stress and disharmony inherent to the resistant resident.

  16. Reducing Resistance

    DEFF Research Database (Denmark)

    Lindell, Johanna

    care may influence decisions on antibiotic use. Based on video-and audio recordings of physician-patient consultations it is investigated how treatment recommendations are presented, can be changed, are forecast and explained, and finally, how they seemingly meet resistance and how this resistance......Antibiotic resistance is a growing public health problem both nationally and internationally, and efficient strategies are needed to reduce unnecessary use. This dissertation presents four research studies, which examine how communication between general practitioners and patients in Danish primary...... is responded to.The first study in the dissertation suggests that treatment recommendations on antibiotics are often done in a way that encourages patient acceptance. In extension of this, the second study of the dissertation examines a case, where acceptance of such a recommendation is changed into a shared...

  17. Anticoagulant Resistance

    DEFF Research Database (Denmark)

    Heiberg, Ann-Charlotte

    Although sewer rat control is carried out in more than 80 % of all Danish municipalities, with usage of large amounts of anticoagulant rodenticides, knowledge on anticoagulant resistance among rats living in the sewers is limited. As rat problems in urban areas are believed to be related to sewer...... problems (70-90 % in UK and DK) unawareness of resistance amongst these populations of Brown rats may constitute a future control problem and knowledge on this issue has become crucial. Rats were captured in sewers from seven different locations in the suburban area of Copenhagen. Locations was chosen...... to represent different sewer rat management strategies i) no anticoagulants for approx. 20 years ii) no anticoagulants for the last 5 years and iii) continuous control for many years. Animals were tested for resistance to bromadiolone by Blood-Clotting Response test, as bromadiolone is the most frequently used...

  18. Androgen resistance.

    Science.gov (United States)

    Hughes, Ieuan A; Deeb, Asma

    2006-12-01

    Androgen resistance causes the androgen insensitivity syndrome in its variant forms and is a paradigm of clinical syndromes associated with hormone resistance. In its complete form, the syndrome causes XY sex reversal and a female phenotype. Partial resistance to androgens is a common cause of ambiguous genitalia of the newborn, but a similar phenotype may result from several other conditions, including defects in testis determination and androgen biosynthesis. The biological actions of androgens are mediated by a single intracellular androgen receptor encoded by a gene on the long arm of the X chromosome. Mutations in this gene result in varying degrees of androgen receptor dysfunction and phenotypes that often show poor concordance with the genotype. Functional characterization and three-dimensional modelling of novel mutant receptors has been informative in understanding the mechanism of androgen action. Management issues in syndromes of androgen insensitivity include decisions on sex assignment, timing of gonadectomy in relation to tumour risk, and genetic and psychological counselling.

  19. Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications

    Science.gov (United States)

    Ismail, Muhammad; Rana, Anwar Manzoor; Talib, Ijaz; Tsai, Tsung-Ling; Chand, Umesh; Ahmed, Ejaz; Nadeem, Muhammad Younus; Aziz, Abdul; Shah, Nazar Abbas; Hussain, Muhammad

    2015-01-01

    Fully transparent resistive random access memory (TRRAM) device based on CeO2 as active layer using indium-tin-oxide (ITO) electrodes was fabricated on glass substrate. The ITO/CeO2/ITO memory device shows 81% transmission of visible light, optical band gap energy of 4.05 eV, and exhibits reliable bipolar resistive switching behavior. X-ray diffraction of CeO2 thin films demonstrated a weak polycrystalline phase. The low field conduction is dominated by Ohmic type while Poole-Frenkel effect is responsible for conduction in the high field region. The device reliability investigations, such as data retention (over 104 s) under applied stress and endurance tests conducted at room temperature and 85 °C show potential of our TRRAM devices for future non-volatile memory applications.

  20. Drug resistance

    NARCIS (Netherlands)

    Gorter, J.A.; Potschka, H.; Noebels, J.L.; Avoli, M.; Rogawski, M.A.; Olsen, R.W.; Delgado-Escueta, A.V.

    2012-01-01

    Drug resistance remains to be one of the major challenges in epilepsy therapy. Identification of factors that contribute to therapeutic failure is crucial for future development of novel therapeutic strategies for difficult-to-treat epilepsies. Several clinical studies have shown that high seizure f

  1. Two-dimensional low-resistance contacts for high performance WSe2 and MoS2 transistors

    Science.gov (United States)

    Chuang, Hsun-Jen

    Two-dimensional layered materials beyond graphene such as transition metal dichalcogenides (TMDs) have attracted a lot of interests due to their superior property in many aspects. In this work, I am focusing on two TMD materials: WSe2 and MoS2. The main objective this work is to develop novel approaches to fabricating low-resistance ohmic contacts to TMDs for low power, high performance electronic applications. First, we used graphene as electrical contacts for WSe2 field-effect transistor with superior performance, including a high ON/OFF ratio of >107 at 170 K, large electron mobility of 330 cm2V-1s -1 and he hole mobility of 270 cm2V-1s -1 at 77 K, and low contact resistance of 2kΩ microm. Second, we developed a novel 2D to 2D contacts strategy2 for a variety of TMDs by van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. The high intrinsic behavior of the device is revealed, where it exhibits low contact resistances of 0.3 kΩ microm, on/off ratios up to > 109 as well as two-terminal field-effect hole mobility muFE ≈ 2x102 cm2 V-1 s -1 at 300K, which increases to > 6x103 cm 2 V-1 s-1 down to 10K. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and other 2D materials as the channel materials in post-silicon electronic.

  2. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.

    2013-12-12

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  3. Probing the nature and resistance of the molecule-electrode contact in SAM-based junctions

    Science.gov (United States)

    Suchand Sangeeth, C. S.; Wan, Albert; Nijhuis, Christian A.

    2015-07-01

    It is challenging to quantify the contact resistance and to determine the nature of the molecule-electrode contacts in molecular two-terminal junctions. Here we show that potentiodynamic and temperature dependent impedance measurements give insights into the nature of the SAM-electrode interface and other bottlenecks of charge transport (the capacitance of the SAM (CSAM) and the resistance of the SAM (RSAM)), unlike DC methods, independently of each other. We found that the resistance of the top-electrode-SAM contact for junctions with the form of AgTS-SCn//GaOx/EGaIn with n = 10, 12, 14, 16 or 18 is bias and temperature independent and hence Ohmic (non-rectifying) in nature, and is orders of magnitude smaller than RSAM. The CSAM and RSAM are independent of the temperature, indicating that the mechanism of charge transport in these SAM-based junctions is coherent tunneling and the charge carrier trapping at the interfaces is negligible.It is challenging to quantify the contact resistance and to determine the nature of the molecule-electrode contacts in molecular two-terminal junctions. Here we show that potentiodynamic and temperature dependent impedance measurements give insights into the nature of the SAM-electrode interface and other bottlenecks of charge transport (the capacitance of the SAM (CSAM) and the resistance of the SAM (RSAM)), unlike DC methods, independently of each other. We found that the resistance of the top-electrode-SAM contact for junctions with the form of AgTS-SCn//GaOx/EGaIn with n = 10, 12, 14, 16 or 18 is bias and temperature independent and hence Ohmic (non-rectifying) in nature, and is orders of magnitude smaller than RSAM. The CSAM and RSAM are independent of the temperature, indicating that the mechanism of charge transport in these SAM-based junctions is coherent tunneling and the charge carrier trapping at the interfaces is negligible. Electronic supplementary information (ESI) available: Detailed experimental procedure, Nyquist

  4. Effects of electrode material and configuration on the characteristics of planar resistive switching devices

    KAUST Repository

    Peng, H.Y.

    2013-11-13

    We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories. 2013 Author(s).

  5. Loss compensation in metamaterials through embedding of active transistor based negative differential resistance circuits.

    Science.gov (United States)

    Xu, Wangren; Padilla, Willie J; Sonkusale, Sameer

    2012-09-24

    Dielectric and ohmic losses in metamaterials are known to limit their practical use. In this paper, an all-electronic approach for loss compensation in metamaterials is presented. Each unit cell of the meta-material is embedded with a cross-coupled transistor pair based negative differential resistance circuit to cancel these losses. Design, simulation and experimental results for Split Ring Resonator (SRR) metamaterials with and without loss compensation are presented. Results indicate that the quality factor (Q) of the SRR improves by over 400% at 1.6 GHz, showing the effectiveness of the approach. The proposed technique is scalable over a broad frequency range and is limited only by the maximum operating frequency of transistors, which is reaching terahertz in today's semiconductor technologies.

  6. Identification of electrical resistance of fresh state concrete for nondestructive setting process monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Sung Woo [Dept. of Safety Engineering, Pukyong National University, Busan (Korea, Republic of)

    2015-12-15

    Concrete undergoes significant phase changes from liquid to solid states as hydration progresses. These phase changes are known as the setting process. A liquid state concrete is electrically conductive because of the presence of water and ions. However, since the conductive elements in the liquid state of concrete are consumed to produce non-conductive hydration products, the electrical conductivity of hydrating concrete decreases during the setting process. Therefore, the electrical properties of hydrating concrete can be used to monitor the setting process of concrete. In this study, a parameter identification method to estimate electrical parameters such as ohmic resistance of concrete is proposed. The effectiveness of the proposed method for monitoring the setting process of concrete is experimentally validated.

  7. Anthelmintic resistance.

    Science.gov (United States)

    Waller, P J

    1997-11-01

    Since the first reports of resistance to the broad spectrum anthelmintics were made some three decades ago, this phenomenon has changed from being considered merely as a parasitological curiosity to a state of industry crisis in certain livestock sectors. This extreme situation exists with the small ruminant industry of the tropical/sub-tropical region of southern Latin America where resistance to the entire broad spectrum anthelmintic arsenal now occurs. In contrast, the cattle industry does not appear to be threatened--or so it seems. Although field reports of resistance have been made to the range of broad spectrum anthelmintics in nematode parasites of cattle, it appears that the evolution of resistance in cattle parasites is not as dramatic as for sheep worms. However, one cannot remain confident that this state of affairs will remain static. Concern is shared amongst parasitologists that we have not looked closely enough. In regions of the world where internal parasites are considered a problem in cattle and drenching occurs frequently, no widespread surveys have been carried out. It appears that because of the very high costs and risks associated with taking a new active drug down the development track to marketing, that the pharmaceutical industry has, in general, turned away from this activity. By implication, the international small ruminant industry is too small for these companies to make the necessary investment. This begs two questions: What is the fate of the sheep (and goat) industries in those parts of the world where resistance is rampant and immediate ameliorative parasite control options are required? What will be the response if significant resistance is found in cattle parasites? There is a body of opinion which suggests that if resistance becomes an issue in the control of cattle parasites then the pharmaceutical industry will find it commercially attractive to re-enter the anthelmintic discovery and development business. This is based on the

  8. Optimization of the contact resistance in the interface structure of n-type Al/a-SiC:H by thermal annealing for optoelectronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, Roberto; Mireles, Jose Jr. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, 32310, Chihuahua (Mexico); Torres, Alfonso; Zuniga, Carlos; Moreno, Mario [National Institute for Astrophysics Optics and Electronics INAOE, Luis E. Erro 1, PO Box 51 and 216, 7200, Puebla (Mexico)

    2010-07-15

    The presented work meets the requirements for integration of amorphous silicon carbon films with silicon technology in order to obtain a complete optoelectronic system such as light emitting diodes and its electronic readout circuits. The key enabler for this integration scheme is the low temperature of deposition of a-SiC:H films and an ohmic behavior in the interface metal/a-SiC:H. In this work, the optimization of the interface Al/a-SiC:H films are performed by means of thermal annealing timing. The a-SiC:H films were deposited by enhanced chemical vapor deposition from CH{sub 4}/SiH{sub 4} and C{sub 2}H{sub 2}/SiH{sub 4} mixtures. The structural and optical properties of the deposited films are presented. An implantation phosphorous dose was used for doping before fabrication of patterned aluminum contacts. The implanted films were electrically characterized by the transfer length method (TLM) measuring a sheet resistance value as low as 171 M{omega}/square. The Schottky behavior was improved to ohmic behavior after several hours in thermal annealing treatments at 350 C, which allows to obtain a reasonable contact resistance values in the range from 8.6 to 26.8 k{omega}. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. Resistive tearing instability in electron MHD: application to neutron star crusts

    Science.gov (United States)

    Gourgouliatos, Konstantinos N.; Hollerbach, Rainer

    2016-12-01

    We study a resistive tearing instability developing in a system evolving through the combined effect of Hall drift in the electron magnetohydrodynamic limit and Ohmic dissipation. We explore first the exponential growth of the instability in the linear case and we find the fastest growing mode, the corresponding eigenvalues and dispersion relation. The instability growth rate scales as γ ∝ B2/3σ-1/3, where B is the magnetic field and σ the electrical conductivity. We confirm the development of the tearing resistive instability in the fully non-linear case, in a plane-parallel configuration where the magnetic field polarity reverses, through simulations of systems initiating in Hall equilibrium with some superimposed perturbation. Following a transient phase, during which there is some minor rearrangement of the magnetic field, the perturbation grows exponentially. Once the instability is fully developed, the magnetic field forms the characteristic islands and X-type reconnection points, where Ohmic decay is enhanced. We discuss the implications of this instability for the local magnetic field evolution in neutron stars' crusts, proposing that it can contribute to heating near the surface of the star, as suggested by models of magnetar post-burst cooling. In particular, we find that a current sheet a few metres thick, covering as little as 1 per cent of the total surface, can provide 1042 erg in thermal energy within a few days. We briefly discuss applications of this instability in other systems where the Hall effect operates such as protoplanetary discs and space plasmas.

  10. 关于球形电极Zn-Cu电池的Ohmic电阻和Joule热电阻的理论研究%A Theoretical Study on the Ohmic Resistance R of Zn-Cu Cells with Spherical Electrodes

    Institute of Scientific and Technical Information of China (English)

    杨以刚; 王海燕; 张彬旭

    2005-01-01

    当Zn-Cu伏打电池处于缓慢、均匀稳定的放电状态时,Joule热电阻不等于Ohmic电阻R.从能量上来考虑,电池中不仅电能转化成热量,化学能也转化成热量.涉及由电能I所带的离子,而R则涉及电解质中所有离子.

  11. Antibiotic Resistance

    DEFF Research Database (Denmark)

    Hansen, Malene Plejdrup; Hoffmann, Tammy C; McCullough, Amanda R

    2015-01-01

    Numerous opportunities are available in primary care for alleviating the crisis of increasing antibiotic resistance. Preventing patients from developing an acute respiratory infection (ARI) will obviate any need for antibiotic use downstream. Hygiene measures such as physical barriers and hand...... will greatly improve the use of antibiotics for ARIs. However, used in concert, combinations are likely to enable clinicians and health care systems to implement the strategies that will reduce antimicrobial resistance in the future....... antibiotic prescribing are a major factor in the prescribing for ARIs. Professional interventions with educational components are effective, although they have modest effects, and are expensive. GPs' perceptions - that mistakenly assume as a default that patients want antibiotics for their ARIs - are often...

  12. Resistant starches.

    Science.gov (United States)

    Jenkins, D J; Kendall, C W

    2000-03-01

    Initially, it was hoped that resistant starches (ie, starches that enter the colon) would have clear advantages in the reduction of colon cancer risk and possibly the treatment of ulcerative colitis. Recent studies have confirmed the ability of resistant starch to increase fecal bulk, to increase the molar ratio of butyrate in relation to other short-chain fatty acids, and to dilute fecal bile acids. However, reduction in fecal ammonia, phenols, and N-nitroso compounds have not been achieved. At this point the picture from the standpoint of colon cancer risk reduction is not clear. Nevertheless, there is a fraction of what has been termed resistant starch (RS1), which enters the colon and acts as slowly digested, or lente, carbohydrate. Foods in this class are low glycemic index and have been shown to reduce the risk of chronic disease. They have been associated with systemic physiologic effects such as reduced postprandial insulin levels and higher high-density lipoprotein cholesterol levels. Consumption of low glycemic index foods has been shown to be related to a reduced risk of type 2 diabetes. Type 2 diabetes has in turn been related to a higher risk of colon cancer, especially colon cancer deaths. If carbohydrate has a protective role in colon cancer prevention, it may lie in the systemic effects of low glycemic index foods. The colonic advantages of different carbohydrates, therefore, remain to be documented. However, there is reason for optimism about the possible health advantages of so-called resistant starches that are slowly digested in the small intestine.

  13. Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/ InxO ohmic contacts with microstructure formed by annealing in oxygen.

    Science.gov (United States)

    Luo, Yi; Bai, Yiming; Han, Yanjun; Li, Hongtao; Wang, Lai; Wang, Jian; Sun, Changzheng; Hao, Zhibiao; Xiong, Bing

    2016-05-16

    Indium tin oxide (ITO)/ indium oxide (InxO) double layer structure was adopted as the transparent conduction and light scattering function layer to improve the light extraction efficiency of the GaN-based blue LEDs. The double layer structure was first deposited in one run by electron beam evaporation using ITO and Indium as the source respectively, and then annealed in an oxygen environment. This method can fabricate transparent electrode with microstructure and low specific contact resistivity one time free from lithography and etching, which makes the fabrication process simple and at a ower cost. For the 220 nm ITO/ 170 nm InxO double layer sample annealed at 600°C for 15 min in oxygen, measurement results show that its root mean square of roughness of the surface microstructure can be as high as 85.2 nm which introduces the strongest light scattering. Its light transmittance at 450 nm can maintain 92.4%. At the same time, it can realize lower specific contact resistivity with p-InGaN. Compared with the GaN-based blue LEDs with only 220 nm ITO electrode, the light output power of the LEDs with 220 nm ITO/ 170 nm InxO double layer structure can be increased about 58.8%, and working voltage at 20 mA injection current is decreased about 0.23 V due to the enhanced current spreading capability. The light output power improvement is also theoretically convinced by finite difference time domain simulations.

  14. Impact of Premetallization Surface Preparation on Nickel-based Ohmic Contacts to Germanium Telluride: An X-ray Photoelectron Spectroscopic Study.

    Science.gov (United States)

    Aldosari, Haila M; Simchi, Hamed; Ding, Zelong; Cooley, Kayla A; Yu, Shih-Ying; Mohney, Suzanne E

    2016-12-21

    Surfaces of polycrystalline α-GeTe films were studied by X-ray photoelectron spectroscopy (XPS) after different treatments in an effort to understand the effect of premetallization surface treatments on the resistance of Ni-based contacts to GeTe. UV-O3 is often used to remove organic contaminants after lithography and prior to metallization; therefore, UV-O3 treatment was used first for 10 min prior to ex situ treatments, which led to oxidation of both Ge and Te to GeOx (x surface without prior UV-O3 treatment. Ar(+) ion etching, H2O, and (NH4)2S treatments create a surface richer in Ge compared to the HCl treatment, after which the surface is Te-rich. However, (NH4)2S also oxidizes Ge and gradually etches the GeTe film. All treated surfaces showed poor stability upon prolonged exposure to air, revealing that even (NH4)2S does not passivate the GeTe surface. The refined transfer length method (RTLM) was used to measure the contact resistance (Rc) of as-deposited Ni-based contacts to GeTe as a function of premetallization surface preparation. HCl-treated samples had the highest Rc (0.036 ± 0.002 Ω·mm), which was more than twice that of the other surface treatments. This increase in Rc is attributed to formation of the Ni1.29Te phase at the Ni/GeTe interface due to an abundance of Te at the surface after HCl treatment. In general, treatments that resulted in Ge-rich surfaces offered lower Rc.

  15. Forming-free unipolar resistive switching behavior with conical conducting filaments in LaVO4 thin films

    Science.gov (United States)

    Hu, Ling; Tang, Xianwu; Luo, Xuan; Zhang, Kejun; Jin, Linhua; Lin, Gaoting; Chen, Li; Zhu, Xuebin; Song, Wenhai; Dai, Jianmin; Sun, Yuping

    2016-04-01

    LaVO4 thin films have been deposited on Pt / Ti /SiO2 /Si substrates by pulsed laser deposition in order to explore the resistive switching (RS) behavior of the Au/LaVO4/Pt devices. It is found that the as-prepared Au/LaVO4/Pt devices stay in the low resistance state (LRS) and no electroforming process (forming-free) is needed to trigger fresh devices for the subsequent RS. Furthermore, the devices show excellent switching parameters such as a reproducible switching effect, a high resistance ratio of  ˜104 between the LRS and high resistance state (HRS), good endurance and retention characteristics, and non-overlapping switching voltages. The dominant conduction mechanisms are Ohmic conduction in the LRS and the lower voltage region of the HRS, and Poole-Frenkel emission in the higher voltage region of the HRS. The combination of temperature dependence of resistance, x-ray photoelectron spectroscopy, and model analysis suggests that the forming-free unipolar RS behavior can be explained by the formation and rupture of conical conducting filaments formed out of oxygen vacancies. These results may be important for practical application in nonvolatile resistive switching memory.

  16. Resistive Switching Characteristics of Tantalum Oxide Thin Film and Titanium Oxide Nanoparticles Hybrid Structure.

    Science.gov (United States)

    Park, Mi Ra; Abbas, Yawar; Hu, Quanli; Yoon, Tae-Sik; Choi, Young Jin; Kang, Chi Jung

    2015-11-01

    The fabrication of hybrid structure with TiO2 nanoparticle assembly and Ta2O5 thin film layer was demonstrated. The close-packed nanoparticles could influence the resistive switching behaviors due to the huge numbers of interface states and vacancies in the nanoparticle assembly. The device with hybrid structure presented the typical bipolar resistive switching characteristics in the structure of Ti/TiO2/Ta2O5/Au on SiO2/Si substrate. The set voltage was observed at -0.7 V, and the reset voltage occurred at (-)-0.7 V, which was smaller than that of Ta2O5 layer only. The electrical conduction mechanisms were the ohmic conduction at low resistance state (LRS) and the space charge limited conduction at high resistance state (HRS), respectively. The devices showed stable current ratio of LRS to HRS. The temperature dependent properties of the devices were also investigated. The device with nanoparticle assembly showed better electrical characteristics with low HRS current level and stable LRS current level with respect to the temperature.

  17. Mechanisms of current conduction in Pt/BaTiO{sub 3}/Pt resistive switching cell

    Energy Technology Data Exchange (ETDEWEB)

    Pan, R.K. [School of Materials Science and Engineering, Hubei University, Wuhan 430062 (China); Zhang, T.J., E-mail: tj65zhang@yahoo.com.cn [School of Materials Science and Engineering, Hubei University, Wuhan 430062 (China); Wang, J.Y.; Wang, J.Z. [School of Materials Science and Engineering, Hubei University, Wuhan 430062 (China); Wang, D.F. [School of Materials Science and Engineering, Hubei University, Wuhan 430062 (China); q-Psi and Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Duan, M.G. [School of Materials Science and Engineering, Hubei University, Wuhan 430062 (China)

    2012-03-30

    The 80-nm-thickness BaTiO{sub 3} (BT) thin film was prepared on the Pt/Ti/SiO{sub 2}/Si substrate by the RF magnetron sputtering technique. The Pt/BT/Pt/Ti/SiO{sub 2}/Si structure was investigated using X-ray diffraction and scanning electron microscopy. The current-voltage characteristic measurements were performed. The bipolar resistive switching behavior was found in the Pt/BT/Pt cell. The current-voltage curves were well fitted in different voltage regions at the high resistance state (HRS) and the low resistance state (LRS), respectively. The conduction mechanisms are concluded to be Ohmic conduction and Schottky emission at the LRS, while space-charge-limited conduction and Poole-Frenkel emission at the HRS. The electroforming and switching processes were explained in terms of the valence change mechanism, in which oxygen vacancies play a key role in forming conducting paths. - Highlights: Black-Right-Pointing-Pointer Pt/BaTiO{sub 3}/Pt cell shows the bipolar resistive switching behavior. Black-Right-Pointing-Pointer The current-voltage curves were well fitted for different conduction mechanisms. Black-Right-Pointing-Pointer The electroforming and switching processes were explained.

  18. Aspirin Resistance

    Directory of Open Access Journals (Sweden)

    Khaled Mansour

    2009-01-01

    Full Text Available The development of adverse cardiovascular events despite aspirin use has established an interest in a possible resistance to the drug. Several definitions have been set and various laboratory testing modalities are available. This has led to a wide range of prevalence reports in different clinical entities. The etiologic mechanism has been related to clinical, genetic, and other miscellaneous factors. The clinical implications of this phenomenon are significant and warrant concern. Management strategies are currently limited to dosing alteration and introduction of other anitplatelet agents. However, these measures have not met the expected efficacy or safety.

  19. Insulin Resistance

    DEFF Research Database (Denmark)

    Jensen, Benjamin Anderschou Holbech

    Insulin resistance (IR) is escalating with alarming pace and is no longer restricted to westernized countries. As a forerunner for some of the most serious threats to human health including metabolic syndrome, cardiovascular diseases, and type 2-diabetes, the need for new treatment modalities...... interventions. We further show that improving the inflammatory toning, using fish oil as fat source, protects mice against diet induced obesity and -inflammation while preserving insulin sensitivity, even in the absence of free fatty acid receptor 4. Conversely, HFD-induced intestinal dysbiosis is associated...

  20. Resistant hypertension.

    Science.gov (United States)

    Armario, P; Oliveras, A; de la Sierra, A

    2013-11-01

    A 53 year old woman with hypercholesterolemia treated with statins, with no history of cardiovascular disease, was referred to the Hypertension and Vascular Risk Unit for management of hypertension resistant to 4 antihypertensive agents at full doses. The patient had obesity, with a body mass index of 36.3kg/m(2) and office blood pressure 162/102mm Hg. Physical examination showed no data of interest. glucose 120mg/dl, glycated Hb: 6.4%, albuminuria 68mg/g, kidney function and study of the renin angiotensin system and other biochemical parameters were normal. Echocardiography: left ventricular mass, 131g/m(2) (normal, <110g/m(2)). True resistant hypertension was confirmed by ambulatory monitoring of blood pressure during 24h (153/89mm Hg). Spironolactone treatment (25mg/day) was added and was well tolerated, with no change in renal function and kaliemia within normal (4.1mmol/l) following the treatment. After 8 weeks, blood pressure was well controlled: office blood pressure 132/86mm Hg and 24h-ambulatory blood pressure: 128/79mm Hg. Copyright © 2013 Elsevier España, S.L. All rights reserved.

  1. Resistive switching characteristic and uniformity of low-power HfO x -based resistive random access memory with the BN insertion layer

    Science.gov (United States)

    Su, Shuai; Jian, Xiao-Chuan; Wang, Fang; Han, Ye-Mei; Tian, Yu-Xian; Wang, Xiao-Yang; Zhang, Hong-Zhi; Zhang, Kai-Liang

    2016-10-01

    In this letter, the Ta/HfO x /BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each. The reset current is reduced for the HfO x /BN bilayer device compared with that for the Ta/HfO x /TiN structure. Furthermore, the reset current decreases with increasing BN thickness. The HfO x layer is a dominating switching layer, while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode. The current conduction mechanism of low resistance state in the HfO x /BN bilayer device is space-charge-limited current (SCLC), while it is Ohmic conduction in the HfO x device. Project supported by the National Natural Science Foundation of China (Grant Nos. 61274113, 11204212, 61404091, 51502203, and 51502204), the Tianjin Natural Science Foundation, China (Grant Nos. 14JCZDJC31500 and 14JCQNJC00800), and the Tianjin Science and Technology Developmental Funds of Universities and Colleges, China (Grant No. 20130701).

  2. Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

    Energy Technology Data Exchange (ETDEWEB)

    Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

    2016-01-04

    We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

  3. On the relation between deep level compensation, resistivity and electric field in semi-insulating CdTe:Cl radiation detectors

    Science.gov (United States)

    Cola, Adriano; Farella, Isabella; Pousset, Jeremy; Valletta, Antonio

    2016-12-01

    A compensation model for semi-insulating CdTe:Cl based on a single dominant deep level 0.725 eV above the valence band is proposed. The model is corroborated by experimental evidence: resistivity measurements as a function of temperature on bulk crystals and stationary electric field distributions in Ohmic/Schottky radiation detectors, obtained by the Pockels effect. The latter are in close agreement with the numerical solutions of transport equations when considering the deep centre concentration in the range 2 - 4 × 1012 cm-3, and a compensation ratio R = 2.1, this one being consistent with an original ambipolar analysis of resistivity. More generally, the approach elucidates the role of electrical contacts and deep levels in controlling the electric fields in devices based on compensated materials.

  4. Resistance welding

    DEFF Research Database (Denmark)

    Bay, Niels; Zhang, Wenqi; Rasmussen, Mogens H.

    2003-01-01

    Resistance welding comprises not only the well known spot welding process but also more complex projection welding operations, where excessive plastic deformation of the weld point may occur. This enables the production of complex geometries and material combinations, which are often not possible...... to weld by traditional spot welding operations. Such joining processes are, however, not simple to develop due to the large number of parameters involved. Development has traditionally been carried out by large experimental investigations, but the development of a numerical programme system has changed...... this enabling prediction of the welding performance in details. The paper describes the programme in short and gives examples on industrial applications. Finally investigations of causes for failure in a complex industrial joint of two dissimilar metals are carried out combining numerical modelling...

  5. Resistance welding

    DEFF Research Database (Denmark)

    Bay, Niels; Zhang, Wenqi; Rasmussen, Mogens H.

    2003-01-01

    this enabling prediction of the welding performance in details. The paper describes the programme in short and gives examples on industrial applications. Finally investigations of causes for failure in a complex industrial joint of two dissimilar metals are carried out combining numerical modelling......Resistance welding comprises not only the well known spot welding process but also more complex projection welding operations, where excessive plastic deformation of the weld point may occur. This enables the production of complex geometries and material combinations, which are often not possible...... to weld by traditional spot welding operations. Such joining processes are, however, not simple to develop due to the large number of parameters involved. Development has traditionally been carried out by large experimental investigations, but the development of a numerical programme system has changed...

  6. Applications of electrical resistance tomography to subsurface environmental restoration

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez, A.L. [Lawrence Livermore National Lab., CA (United States); Daily, W.D.

    1994-11-15

    We are developing a new imaging technique, Electrical Resistance Tomography (ERT), to map subsurface liquids as flow occurs during natural or clean-up processes and to map geologic structure. Natural processes (such as surface water infiltrating the vadose zone) and man-induced processes (such as tank leaks and clean-up processes such as steam injection), can create changes in a soil`s electrical properties that are readily measured. We have conducted laboratory and a variety of field experiments to investigate the capabilities and limitations of ERT for imaging underground structures and processes. In the last four years we have used ERT to successfully monitor several field processes including: a subsurface steam injection process (for VOC removal), an air injection process (below the water table) for VOC removal, water infiltration through the vadose zone, radio-frequency heating, ohmic heating, and tank and pond leaks. The information derived from ERT can be used by remediation projects to: detect and locate leaks, determine the effectiveness of clean-up processes, select appropriate clean-up alternatives, and to verify the installation and performance of subsurface barriers.

  7. Comparison of Power Supply Pumping of Switch-Mode Audio Power Amplifiers with Resistive Loads and Loudspeakers as Loads

    DEFF Research Database (Denmark)

    Knott, Arnold; Petersen, Lars Press

    2013-01-01

    Power supply pumping is generated by switch-mode audio power amplifiers in half-bridge configuration, when they are driving energy back into their source. This leads in most designs to a rising rail voltage and can be destructive for either the decoupling capacitors, the rectifier diodes...... in the power supply or the power stage of the amplifier. Therefore precautions are taken by the amplifier and power supply designer to avoid those effects. Existing power supply pumping models are based on an ohmic load attached to the amplifier. This paper shows the analytical derivation of the resulting...... waveforms and extends the model to loudspeaker loads. Measurements verify, that the amount of supply pumping is reduced by a factor of 4 when comparing the nominal resistive load to a loudspeaker. A simplified and more accurate model is proposed and the influence of supply pumping on the audio performance...

  8. Mechanisms of drug resistance: quinolone resistance.

    Science.gov (United States)

    Hooper, David C; Jacoby, George A

    2015-09-01

    Quinolone antimicrobials are synthetic and widely used in clinical medicine. Resistance emerged with clinical use and became common in some bacterial pathogens. Mechanisms of resistance include two categories of mutation and acquisition of resistance-conferring genes. Resistance mutations in one or both of the two drug target enzymes, DNA gyrase and DNA topoisomerase IV, are commonly in a localized domain of the GyrA and ParE subunits of the respective enzymes and reduce drug binding to the enzyme-DNA complex. Other resistance mutations occur in regulatory genes that control the expression of native efflux pumps localized in the bacterial membrane(s). These pumps have broad substrate profiles that include quinolones as well as other antimicrobials, disinfectants, and dyes. Mutations of both types can accumulate with selection pressure and produce highly resistant strains. Resistance genes acquired on plasmids can confer low-level resistance that promotes the selection of mutational high-level resistance. Plasmid-encoded resistance is due to Qnr proteins that protect the target enzymes from quinolone action, one mutant aminoglycoside-modifying enzyme that also modifies certain quinolones, and mobile efflux pumps. Plasmids with these mechanisms often encode additional antimicrobial resistances and can transfer multidrug resistance that includes quinolones. Thus, the bacterial quinolone resistance armamentarium is large.

  9. Animation of Antimicrobial Resistance

    Science.gov (United States)

    ... Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin it More sharing options ... produced a nine-minute animation explaining how antimicrobial resistance both emerges and proliferates among bacteria. Over time, ...

  10. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Veterinary Home Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin it ... Veterinary Medicine is cited as the corporate author. Animation Animation of Antimicrobial Resistance (WMV - 19.2MB) 9: ...

  11. Wrestling with Resistance.

    Science.gov (United States)

    Hartzell, Gary

    1996-01-01

    Discusses reasons for and methods to defuse classroom teachers' resistance to change in the workplace. Suggestions include planning for resistance, acknowledging peoples' concerns and addressing them specifically, avoiding criticism of current methods, individualizing resistance reduction, and providing ongoing support. (JKP)

  12. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Veterinary Home Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin it ... Veterinary Medicine is cited as the corporate author. Animation Animation of Antimicrobial Resistance (WMV - 19.2MB) 9: ...

  13. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin it More sharing options ... CVM) produced a nine-minute animation explaining how antimicrobial resistance both emerges and proliferates among bacteria. Over time, ...

  14. Fabrication of p-type SrCuSeF/n-type In2O3:Sn bilayer ohmic tunnel junction and its application to the back contact of CdS/CdTe solar cells

    Science.gov (United States)

    Kitabayashi, Shuya; Shiina, Yasuyoshi; Murata, Ayuki; Okamoto, Tamotsu; Wada, Takahiro

    2017-08-01

    To develop polycrystalline thin-film tandem solar cells, a SrCuSeF/In2O3:Sn (ITO) bilayer film was studied. The transparent p-type conductive SrCuSeF layer was deposited by pulsed laser deposition (PLD), and the n-type conductive ITO layer was deposited by RF sputtering. The SrCuSeF/ITO bilayer film showed ohmic I-V characteristics. A tunnel junction between the p-type SrCuSeF and n-type ITO layers was successfully formed because the p-type SrCuSeF and the n-type ITO layers had sufficiently high carrier concentrations. The SrCuSeF/ITO bilayer film was applied as the back contact of a CdS/CdTe solar cell. The photovoltaic performance of the CdS/CdTe solar cell depends considerably on the thickness of the SrCuSeF layer. The CdTe solar cell with a back contact of the SrCuSeF layer with a thickness of 34 nm and the ITO layer with a thickness of 200 nm showed a high conversion efficiency of 14.3% (V OC = 804 mV, J SC = 27.5 mA/cm2, and FF = 0.65). The conversion efficiency was much higher than that of the CdTe solar cell with the SrCuSeF single-layer back contact (11.6%) and that of the CdTe cell with the ITO single-layer back contact (2.75%).

  15. Ultrasensitive NO2 Sensor Based on Ohmic Metal-Semiconductor Interfaces of Electrolytically Exfoliated Graphene/Flame-Spray-Made SnO2 Nanoparticles Composite Operating at Low Temperatures.

    Science.gov (United States)

    Tammanoon, Nantikan; Wisitsoraat, Anurat; Sriprachuabwong, Chakrit; Phokharatkul, Ditsayut; Tuantranont, Adisorn; Phanichphant, Sukon; Liewhiran, Chaikarn

    2015-11-04

    In this work, flame-spray-made undoped SnO2 nanoparticles were loaded with 0.1-5 wt % electrolytically exfoliated graphene and systematically studied for NO2 sensing at low working temperatures. Characterizations by X-ray diffraction, transmission/scanning electron microscopy, and Raman and X-ray photoelectron spectroscopy indicated that high-quality multilayer graphene sheets with low oxygen content were widely distributed within spheriodal nanoparticles having polycrystalline tetragonal SnO2 phase. The 10-20 μm thick sensing films fabricated by spin coating on Au/Al2O3 substrates were tested toward NO2 at operating temperatures ranging from 25 to 350 °C in dry air. Gas-sensing results showed that the optimal graphene loading level of 0.5 wt % provided an ultrahigh response of 26,342 toward 5 ppm of NO2 with a short response time of 13 s and good recovery stabilization at a low optimal operating temperature of 150 °C. In addition, the optimal sensor also displayed high sensor response and relatively short response time of 171 and 7 min toward 5 ppm of NO2 at room temperature (25 °C). Furthermore, the sensors displayed very high NO2 selectivity against H2S, NH3, C2H5OH, H2, and H2O. Detailed mechanisms for the drastic NO2 response enhancement by graphene were proposed on the basis of the formation of graphene-undoped SnO2 ohmic metal-semiconductor junctions and accessible interfaces of graphene-SnO2 nanoparticles. Therefore, the electrolytically exfoliated graphene-loaded FSP-made SnO2 sensor is a highly promising candidate for fast, sensitive, and selective detection of NO2 at low operating temperatures.

  16. Resistance to antibiotics

    OpenAIRE

    1999-01-01

    The antibiotics represent the most important therapeutic arsenal in the fight against pathogen microorganisms. Even in the beginning of their use, there was registered bacterial resistance, phenomenon thatbecame an alarming subject in the last decades. There are some types of resistance to antibiotics that are influenced by many factors. The resistance term can be used as microbiological resistance and clinical resistance. The resistance to antibiotics can be a natural phenomenon or a gained ...

  17. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... More in Antimicrobial Resistance National Antimicrobial Resistance Monitoring ... Note: If you need help accessing information in different file formats, see Instructions for Downloading ...

  18. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... More in Antimicrobial Resistance National Antimicrobial Resistance Monitoring ... Note: If you need help accessing information in different file formats, see Instructions for Downloading ...

  19. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Resistance National Antimicrobial Resistance Monitoring System 2014 NARMS ... Note: If you need help accessing information in different file formats, see Instructions for Downloading ...

  20. Antibiotic resistance in Chlamydiae.

    Science.gov (United States)

    Sandoz, Kelsi M; Rockey, Daniel D

    2010-09-01

    There are few documented reports of antibiotic resistance in Chlamydia and no examples of natural and stable antibiotic resistance in strains collected from humans. While there are several reports of clinical isolates exhibiting resistance to antibiotics, these strains either lost their resistance phenotype in vitro, or lost viability altogether. Differences in procedures for chlamydial culture in the laboratory, low recovery rates of clinical isolates and the unknown significance of heterotypic resistance observed in culture may interfere with the recognition and interpretation of antibiotic resistance. Although antibiotic resistance has not emerged in chlamydiae pathogenic to humans, several lines of evidence suggest they are capable of expressing significant resistant phenotypes. The adept ability of chlamydiae to evolve to antibiotic resistance in vitro is demonstrated by contemporary examples of mutagenesis, recombination and genetic transformation. The isolation of tetracycline-resistant Chlamydia suis strains from pigs also emphasizes their adaptive ability to acquire antibiotic resistance genes when exposed to significant selective pressure.

  1. Empirical analysis of contributing factors to heating in lithium-ion cells: Anode entropy versus internal resistance

    Science.gov (United States)

    Srinivasan, Rengaswamy; Carkhuff, Bliss G.

    2013-11-01

    Charging a battery beyond its maximum capacity can lead both to cell overheating and to the venting of gasses. A fundamental understanding of cell heating could lead to the development of real-time sensors that anticipate and avert catastrophic battery failure. Joule heating (also called ohmic or resistive heating) from cell internal resistance (Rint) dominates the overall thermal energy (ΔQ) generated during charging. Contrary to prior hypotheses, though, Joule heating does not appear to contribute to venting observed during overcharging. In this manuscript, we examine an alternate hypothesis, that heat released by the entropy change in the anode (ΔSanode) and the concomitant increase in the anode temperature (Tanode) triggers the venting. Using our recently developed non-invasive battery internal temperature (BIT) sensor to monitor Tanode, we separated the contributions of ΔSanode, Rint and the anode resistance (Ranode) to ΔQ. These quantities were tracked during constant current charging of a 18650 Lithium-ion cell, from zero state of charge (SoC) to overcharge. The resulting analysis suggests that anode entropy change is more important than resistive heating resulting from Ranode to the overall thermal energy. Anode entropy measurements, enabled by the BIT sensor, might serve as an alternative or adjunct method for anticipating and avoiding cell venting events.

  2. Facts about Antibiotic Resistance

    Science.gov (United States)

    ... Cost References Español: Datos breves Facts about Antibiotic Resistance Antibiotic resistance is one of the world’s most pressing public ... antibiotic use is a key strategy to control antibiotic resistance. Antibiotic resistance in children and older adults are ...

  3. Evidence for undamped waves on ohmic materials

    CERN Document Server

    Figueiredo, J M A

    2014-01-01

    The propagation of electromagnetic fields in matter has been the subject of intensive studies since the discovery of its rich dynamics. Impedance measurements are one most used technique available to study material properties as well as electromagnetic devices and circuits. This way, novelties on device construction and circuit technology associated to new material properties and/or unusual field dynamics generally rely on results supported by impedance data. Recent advances on nanostructured materials explore astounding molecular properties derived from nanoscale levels and apply them to studies foucused on the generation of new devices. Accordingly, properties inherent to quantum dynamics can also generate unusual circuit elements, not included on the former development of the electromagnetic theory. On same footings, advances in field dynamics could also determine the advent of new technologies, producing immediate impact on our everyday life. In this work we present the results obtained by measuring the i...

  4. Poloidal OHMIC heating in a multipole

    Energy Technology Data Exchange (ETDEWEB)

    Holly, D.J.

    1982-01-01

    The feasibility of using poloidal currents to heat plasmas confined by a multipole field has been examined experimentaly in Tokapole II. The machine is operated as a toroidal octupole, with a time-varying toroidal magnetic field driving poloidal plasma currents I/sub plasma/ - 20 kA to give densities n/sub e/ - 10/sup 13/ cm/sup -3/ and temperatures T/sub e/ - 30 eV.

  5. Simulation Methodology for Analysis of Substrate Noise Impact on Analog / RF Circuits Including Interconnect Resistance

    CERN Document Server

    Soens, C; Wambacq, P; Donnay, S

    2011-01-01

    This paper reports a novel simulation methodology for analysis and prediction of substrate noise impact on analog / RF circuits taking into account the role of the parasitic resistance of the on-chip interconnect in the impact mechanism. This methodology allows investigation of the role of the separate devices (also parasitic devices) in the analog / RF circuit in the overall impact. This way is revealed which devices have to be taken care of (shielding, topology change) to protect the circuit against substrate noise. The developed methodology is used to analyze impact of substrate noise on a 3 GHz LC-tank Voltage Controlled Oscillator (VCO) designed in a high-ohmic 0.18 $\\mu$m 1PM6 CMOS technology. For this VCO (in the investigated frequency range from DC to 15 MHz) impact is mainly caused by resistive coupling of noise from the substrate to the non-ideal on-chip ground interconnect, resulting in analog ground bounce and frequency modulation. Hence, the presented test-case reveals the important role of the o...

  6. Transparent resistive switching memory using aluminum oxide on a flexible substrate

    Science.gov (United States)

    Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

    2016-02-01

    Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

  7. Resistive Switching Characteristics of 10-nm-Thick Amorphous HoScO x Films Doped with Nb and Zn

    Science.gov (United States)

    Wang, Sea-Fue; Hsu, Chia-Chun; Chu, Jinn P.; Liu, Yi-Xin; Chen, Liang-Wei

    2017-03-01

    In this study, 10-nm rare-earth metal-oxide (REMO) films, namely, pure HoScO x (HSO) and HoScO x doped with Nb (HSO-Nb) and Zn (HSO-Zn), were deposited to build resistive random access memory (RRAM) devices with a Pt/REMO/Pt structure using radio frequency magnetron sputtering. The results of x-ray diffraction and transmission electron microscopy showed that all as-deposited REMO films are featureless microstructures lacking long-range order. In all RRAM devices, layer structures were well adhered to each other with relatively smooth interfaces and no cracks or holes were observed. Hall measurements demonstrated n-type conduction in the as-deposited films. The addition of Nb and Zn increased carrier concentration and mobility of the HSO films and reduced electrical resistivity. The former was possibly caused by the electronic compensation of NbSc ··, thereby triggering the formation of polarons, and the latter was probably due to the increase in concentration of oxygen vacancies associated with acceptor doping. The RRAM devices revealed unipolar switching behavior characterized by a resistance ratio of more than three orders of magnitude, good endurance, and a long retention time. The switching behavior of the RRAM with amorphous HSO films was altered by the doping species. Doping with Nb and Zn decreased the forming voltage, facilitated the use of a smaller switching voltage, and increased the resistance ratio of high- and low-resistance states. The conduction mechanisms for the low resistive state and high resistive state were dominated by Ohmic conduction and trap-controlled space-charge-limited current mechanisms, respectively.

  8. Synthesis and resistive switching behaviour of ZnMnO3 thin films with an Ag/ZnMnO3/ITO unsymmetrical structure

    Indian Academy of Sciences (India)

    Hua Wang; Shu-Ming Gao; Ji-Wen Xu; Chang-Lai Yuan; Xiao-Wen Zhang

    2015-02-01

    Single-phase MnZnO3 films were prepared on glass substrates coated with the use of indium tin oxide (ITO) as transparent bottom electrode via the sol–gel method. The effects of annealing temperature on structure, resistance switching behaviour and endurance characteristics of the ZnMnO3 films were investigated. The stable resistive switching behaviour with high resistance ratio in Ag/ZnMnO3/ITO unsymmetrical structure was observed. No second phase is detected, and the crystallinity of the MnZnO3 films is improved with the increase in annealing temperature from 350 to 400°C. The MnZnO3 films annealed at 350–450°C with an Ag/MnZnO3/ITO structure exhibit bipolar resistive switching behaviour. Ohmic and space-charge-limited conductions are the dominant mechanisms at low and high resistance states, respectively. $V{}_{\\text{ON}},\\ \\text{V_{OFF}}$ and $R_{\\text{HRS}}/R_{\\text{LRS}}$ of theMnZnO3 films increase with the increase in annealing temperature. Improved endurance characteristics are observed in the samples annealed at 350 and 400°C. The endurance of the MnZnO3 films degrades when annealed at >450°C.

  9. Resistive switching characteristics of Cu/ZnO0.4S0.6/Al devices constructed on plastic substrates.

    Science.gov (United States)

    Han, Yong; Cho, Kyoungah; Kim, Sangsig

    2012-07-01

    In this study, Cu/ZnO0.4S0.6Al devices are fabricated on plastic substrates using the sputtering method at room temperature. The ratio of O/S in the zinc oxysulfide thin film is confirmed to be 0.4/0.6 from the Auger depth profiling. The Cu/ZnO0.4S0.6/Al devices show unipolar resistive switching behaviors and the ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) is above 10(4). The conduction mechanism of the LRS is governed by Ohm's law. On the other hand, in the HRS, the conduction mechanism at low voltages is controlled by Ohm's law, but that at high voltages results from the Poole-Frenkel emission mechanism. The Ohmic and Poole-Frenkel conduction mechanisms observed in the LRS and HRS support the filament model of unipolar resistive switching. The memory characteristics of the Cu/ZnO0.4S0.6/Al devices are retained for 10(4) sec without any change.

  10. Electric-pulse-induced resistance switching effect in the bulk of La0.5Ca0.5MnO3 ceramics

    Directory of Open Access Journals (Sweden)

    M. L. Wu

    2014-04-01

    Full Text Available In the majority of contributions, the electrical–pulse-induced resistance (EPIR switching effect of perovskite manganites is thought to originate from the extrinsic interfacial Schottky barrier between the metal electrode and the surface of sample. In this work, La0.5Ca0.5MnO3 (LCMO ceramic samples were synthesized by solid state reaction and the transport properties, especially, the EPIR effect and memristor behavior were investigated under 4-wire method using silver-glue as electrodes. Although the I-V characteristic of LCMO shows an ohmic linearity under the 4-wire mode at room temperature, a stable and remarkable EPIR can still be observed when the pulse voltage is more than a critical value. This bulk EPIR effect is novel for rare - earth doped manganites.

  11. The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators

    Directory of Open Access Journals (Sweden)

    M.-H. Liao

    2015-05-01

    Full Text Available Five different kinds of insulators including BaTiO3, TiO2, Al2O3, CdO and ZnO on the n-type InGaAs metal-insulator-semiconductor (M-I-S ohmic contact structure are studied. The effect for the dielectric constant (ε of inserted insulator and the conduction band offset (CBO between an insulator and semiconductor substrate is analyzed by a unified M-I-S contact model. Based on the theoretical model and experimental data, we demonstrates that the inserted ZnO insulator with the high electron affinity and the low CBO (∼0.1 eV to the InGaAs substrate results in ∼10 times contact resistivity reduction, even the ε of ZnO is not pretty high (∼10.

  12. Electric-pulse-induced resistance switching effect in the bulk of La0.5Ca0.5MnO3 ceramics

    Science.gov (United States)

    Wu, M. L.; Yang, C. P.; Shi, D. W.; Wang, R. L.; Xu, L. F.; Xiao, H. B.; Baerner, K.

    2014-04-01

    In the majority of contributions, the electrical-pulse-induced resistance (EPIR) switching effect of perovskite manganites is thought to originate from the extrinsic interfacial Schottky barrier between the metal electrode and the surface of sample. In this work, La0.5Ca0.5MnO3 (LCMO) ceramic samples were synthesized by solid state reaction and the transport properties, especially, the EPIR effect and memristor behavior were investigated under 4-wire method using silver-glue as electrodes. Although the I-V characteristic of LCMO shows an ohmic linearity under the 4-wire mode at room temperature, a stable and remarkable EPIR can still be observed when the pulse voltage is more than a critical value. This bulk EPIR effect is novel for rare - earth doped manganites.

  13. Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Implantation and Excimer Laser Annealing

    Science.gov (United States)

    Wang, Chen; Li, Cheng; Huang, Shihao; Lu, Weifang; Yan, Guangming; Lin, Guangyang; Wei, Jiangbin; Huang, Wei; Lai, Hongkai; Chen, Songyan

    2013-10-01

    Excimer laser annealing of phosphorus-implanted p-type germanium substrate with various laser energy densities for n+/p junction were investigated. The effects of laser energy density on the redistribution of dopant, surface morphology, and recrystallization of the amorphous Ge induced by ion implantation were characterized. A low specific contact resistivity of 1.61×10-6 Ω·cm2 was achieved from Al/n-Ge ohmic contact, in which phosphorus-implanted Ge was annealed at a laser energy density of 250 mJ/cm2, tailoring a small phosphorus diffusion length, high activation level, and low dopant loss. A well-behaved Ge n+/p diode with a rectification ratio up to 1.99×105 was demonstrated.

  14. Resistive MHD jet simulations with large resistivity

    CERN Document Server

    Cemeljic, Miljenko; Vlahakis, Nektarios; Tsinganos, Kanaris

    2009-01-01

    Axisymmetric resistive MHD simulations for radially self-similar initial conditions are performed, using the NIRVANA code. The magnetic diffusivity could occur in outflows above an accretion disk, being transferred from the underlying disk into the disk corona by MHD turbulence (anomalous turbulent diffusivity), or as a result of ambipolar diffusion in partially ionized flows. We introduce, in addition to the classical magnetic Reynolds number Rm, which measures the importance of resistive effects in the induction equation, a new number Rb, which measures the importance of the resistive effects in the energy equation. We find two distinct regimes of solutions in our simulations. One is the low-resistivity regime, in which results do not differ much from ideal-MHD solutions. In the high-resistivity regime, results seem to show some periodicity in time-evolution, and depart significantly from the ideal-MHD case. Whether this departure is caused by numerical or physical reasons is of considerable interest for nu...

  15. Antibiotic / Antimicrobial Resistance Glossary

    Science.gov (United States)

    ... What Everyone Should Know What You Can Do Antibiotic Resistance Q&As Fast Facts Antibiotics Quiz Glossary For ... Pharmacists Continuing Education & Curriculum Opportunities Weighing in on Antibiotic Resistance Improving Prescribing Core Elements of Outpatient Antibiotic Stewardship ...

  16. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... showing how bacterial antimicrobial resistance can develop and spread. All FDA CVM produced material may be copied, ... Displays About NARMS Partners in Antibiotic Resistance and Food Safety Bacteria Tested NARMS at Work Meetings and ...

  17. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... how antimicrobial resistance both emerges and proliferates among bacteria. Over time, the use of antimicrobial drugs will result in the development of resistant strains of bacteria, complicating clinician's efforts to select the appropriate antimicrobial ...

  18. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... how antimicrobial resistance both emerges and proliferates among bacteria. Over time, the use of antimicrobial drugs will result in the development of resistant strains of bacteria, complicating clinician's efforts to select the appropriate antimicrobial ...

  19. Resistance to Powdery Mildews

    DEFF Research Database (Denmark)

    Siwoszek, Agnieszka Izabela

    in majority of them. Resistance to barley powdery mildew in the field is controlled by use of resistant varieties in a combination with fungicides. Early disease management is crucial for effective control. Yet, the pathogen commonly develops fungicide resistance due to simple point mutations. Several studies...... investigated reduced fitness of plants as a cost of resistance to pathogens. In case of barley powdery mildew, most common resistance (mlo) is linked to a higher susceptibility to other pathogens and spontaneous necrosis that leads to yield reduction. Thus, there is a clear need for alternative methods of crop...... protection. In the present study, I provide an overview of the current knowledge about plant pathogens and plant disease resistance. I use Arabidopsis as a model to investigate the mechanism of non-host resistance, presumed to be the most durable and broad-spectrum form of resistance. I attempt to determine...

  20. Resistance to Linezolid

    DEFF Research Database (Denmark)

    Vester, Birte; Ntokou, Eleni

    2017-01-01

    Linezolid is an antimicrobial agent that binds to the bacterial ribosome and thereby inhibits protein synthesis. Soon after its release as a clinical drug, it became clear that bacteria could become resistant to linezolid. The resistance mechanisms are mainly causing alteration of the drug target...... site, but probably efflux might also play a role. The resistance is still rare in surveillance studies, but outbreaks of resistant clones from hospitals have been observed. So far the main mechanisms of resistance are occurrence of mutations in ribosomal genes or obtaining plasmids with a gene coding...... for a methyltransferase providing resistance. The most obvious way to avoid resistance may be development of derivatives of linezolid overcoming the known resistance mechanisms....

  1. Electric field induced structural modifications in metal/SrTiO{sub 3} junctions and their resistive properties

    Energy Technology Data Exchange (ETDEWEB)

    Stoecker, Hartmut [TU Dresden (Germany). Institut fuer Strukturphysik; TU Bergakademie Freiberg (Germany). Institut fuer Experimentelle Physik; Seibt, Juliane; Hanzig, Florian; Wintz, Susi; Meyer, Dirk C. [TU Bergakademie Freiberg (Germany). Institut fuer Experimentelle Physik; Zschornak, Matthias [TU Dresden (Germany). Institut fuer Strukturphysik

    2010-07-01

    In oxides with perovskite-type of structure, mobile oxygen can cause the formation of non-stoichiometric regions when an electric field of sufficient strength ({proportional_to}1000 V/mm) is applied. Our in-situ investigations of metal/SrTiO{sub 3} junctions revealed reversible structural changes at room temperature caused by a systematic field-induced redistribution of oxygen. The investigations were carried out using wide-angle X-ray scattering, X-ray absorption spectroscopy, photoluminescence, nanoindentation and time-dependent electric I-U measurements. Motivated by the successful use of SrTiO{sub 3} with different doping metals for memory cells on the basis of resistive switching combined with the findings on the major importance of oxygen vacancy redistribution, we show the possibility of realizing a resistance change memory based on vacancy-doped SrTiO{sub 3}. The formation of corresponding metal/SrTiO{sub 3} junctions in an electric field is discussed as well as the switching between ohmic and Schottky-type resistive properties. A notable hysteresis in the I-U characteristics can be used to carry out Write, Read and Erase operations to test the memory cell properties of such junctions.

  2. Formation of Schottky-type metal/SrTiO{sub 3} junctions and their resistive properties

    Energy Technology Data Exchange (ETDEWEB)

    Stoecker, Hartmut; Zschornak, Matthias [Technische Universitaet Dresden, Institut fuer Strukturphysik, Dresden (Germany); TU Bergakademie Freiberg, Institut fuer Experimentelle Physik, Freiberg (Germany); Seibt, Juliane; Hanzig, Florian; Wintz, Susi; Abendroth, Barbara; Meyer, Dirk C. [TU Bergakademie Freiberg, Institut fuer Experimentelle Physik, Freiberg (Germany); Kortus, Jens [TU Bergakademie Freiberg, Institut fuer Theoretische Physik, Freiberg (Germany)

    2010-08-15

    Motivated by the successful use of strontium titanate with different doping metals for memory cells on the basis of resistive switching and the recent findings on the major importance of oxygen vacancy redistribution in this compound, the present work shows the possibility of a non-volatile resistance change memory based on vacancy-doped SrTiO{sub 3}. The formation of corresponding metal/SrTiO{sub 3-{delta}} junctions ({delta}>0) in an electric field will be discussed as well as the switching between ohmic and Schottky-type contact behavior. A notable hysteresis in the current-voltage characteristics is used to carry out Write, Read, and Erase operations exemplifying the memory cell properties of such junctions. But whereas the electric field-induced formation of Schottky-type junctions is explainable by oxygen vacancy redistribution, the resistive switching needs to be discussed in terms of vacancies serving as electron trap states at the metal/oxide interface. (orig.)

  3. Electrical parameters and series resistance analysis of Au/Y/p-InP/Pt Schottky barrier diode at room temperature

    Science.gov (United States)

    Rao, L. Dasaradha; Reddy, V. Rajagopal

    2016-05-01

    The current-voltage (I-V) characteristics of Au/Y/p-InP/Pt Schottky barrier diode (SBD) are analyzed at room temperature. The Au/Y/p-InP/Pt SBD shows a good rectification behavior. The ideality factor (n), barrier height (Φb), series resistance (Rs) and shunt resistance (Rsh) are determined from the I-V measurements. The n and Φb values of Au/Y/p-InP/Pt SBD are found to be 1.32 and 0.62 eV respectively. The value of barrier height (BH) obtained from Norde function is compared with those calculated from Cheung's functions. The series resistance (Rs) is calculated from Cheung's and modified Norde functions. Additionally, it is found that n, Φb, Rs, and Rsh have strong correlation with the applied bias. Furthermore, at low and high voltage regions, ohmic and space-charge-limited conduction mechanisms are found to govern the current flow in the diode.

  4. Resisting Organizational Change

    OpenAIRE

    Gunnar Andersson

    2015-01-01

    We are continuously reminded of how change induces controversy and resistance, regardless of support. We repeatedly experience resistance in difficulties of implementation, little progress, and poor results, rather than increased productivity as anticipated. In a detailed account of how change plays out, a mosaic of what resistance looks like emerges. The picture is both familiar and absolutely concrete, and challenges the structural assumptions and dichotomies on support and resistance in an...

  5. Role of tantalum nitride as active top electrode in electroforming-free bipolar resistive switching behavior of cerium oxide-based memory cells

    Energy Technology Data Exchange (ETDEWEB)

    Ismail, Muhammad, E-mail: ismailmalikbzu10@gmail.com [Department of Physics, Bahauddin Zakariya University, Multan 60800 (Pakistan); Ahmed, Ejaz; Rana, Anwar Manzoor; Talib, Ijaz; Khan, Tahira [Department of Physics, Bahauddin Zakariya University, Multan 60800 (Pakistan); Iqbal, Khalid [Department of Radiation Oncology, Shaukat Khanum Memorial Cancer Hospital and Research Centre, Lahore (Pakistan); Nadeem, Muhammad Younus [Department of Physics, Bahauddin Zakariya University, Multan 60800 (Pakistan)

    2015-05-29

    Electroforming-free cerium oxide-based bipolar resistive switching memory devices have been deposited using radio frequency magnetron sputtering technique. These devices demonstrate two types of forming-free cells: some in the low-resistance state and the others in high-resistance state. The transmission electron microscopy and X-ray diffraction analyses illustrate the formation of tantalum oxynitride layer between tantalum nitride (TaN) and cerium oxide (CeO{sub x}), which looks to be responsible for the two types of cells as well as their memory performance. Ohmic and Poole-Frenkel conduction mechanisms are found to be responsible for charge transport in the low- and high-resistance states. The current-voltage characteristics and temperature dependence of resistance suggest that resistive switching mechanism in our TaN/CeO{sub x}/Pt devices may be explained by the model of connection and disconnection of filamentary paths made of oxygen vacancies. The reliability characteristics of TaN/CeO{sub x}/Pt devices indicate better endurance and stable retention performance at relatively lower programming voltages and larger memory window (OFF/ON resistance ratio ~ 10{sup 3}) at room temperature and at 100 °C. - Highlights: • Electroforming-free TaN/CeO{sub x}/Pt memory cells have been fabricated by sputtering. • Device exhibits good endurance, long data retention and high-resistance window (~ 10{sup 3}). • Voltages for SET and RESET transitions of our device exhibit narrow distribution. • The device is forming-free due to pre-existence of abundant oxygen vacancies. • TaN top electrode play major role in uniformity of resistive switching characteristics.

  6. Overcoming resistance to change.

    Science.gov (United States)

    McKay, L

    1993-01-01

    The pace of change in health care organizations challenges nursing administrators at all levels of management to be effective change agents. As resistance is an inevitable element in the process of planned change, inclusion of interventions to overcome resistance is critical to the change agent role. The author presents five theoretically-based strategies for reducing the levels of resistance to planned change.

  7. Effective graph resistance

    NARCIS (Netherlands)

    Ellens, W.; Spieksma, F.M.; Mieghem, P. van; Jamakovic, A.; Kooij, R.E.

    2011-01-01

    This paper studies an interesting graph measure that we call the effective graph resistance. The notion of effective graph resistance is derived from the field of electric circuit analysis where it is defined as the accumulated effective resistance between all pairs of vertices. The objective of the

  8. Resisting Mind Control.

    Science.gov (United States)

    Anderson, Susan M.; Zimbardo, Philip G.

    1980-01-01

    Provides conceptual analyses of mind control techniques along with practical advice on how to resist these techniques. The authors stress that effective mind control stems more from everyday social relations than from exotic technological gimmicks. Suggestions are given for resisting persuasion, resisting systems, and challenging the system.…

  9. Antibiotic resistance reservoirs

    NARCIS (Netherlands)

    Versluis, Dennis

    2016-01-01

    One of the major threats to human health in the 21st century is the emergence of pathogenic bacteria that are resistant to multiple antibiotics, thereby limiting treatment options. An important route through which pathogens become resistant is via acquisition of resistance genes from environmental a

  10. Antibiotic resistance reservoirs

    NARCIS (Netherlands)

    Versluis, Dennis

    2016-01-01

    One of the major threats to human health in the 21st century is the emergence of pathogenic bacteria that are resistant to multiple antibiotics, thereby limiting treatment options. An important route through which pathogens become resistant is via acquisition of resistance genes from environmental

  11. HIV-1 drug resistance and resistance testing.

    Science.gov (United States)

    Clutter, Dana S; Jordan, Michael R; Bertagnolio, Silvia; Shafer, Robert W

    2016-12-01

    The global scale-up of antiretroviral (ARV) therapy (ART) has led to dramatic reductions in HIV-1 mortality and incidence. However, HIV drug resistance (HIVDR) poses a potential threat to the long-term success of ART and is emerging as a threat to the elimination of AIDS as a public health problem by 2030. In this review we describe the genetic mechanisms, epidemiology, and management of HIVDR at both individual and population levels across diverse economic and geographic settings. To describe the genetic mechanisms of HIVDR, we review the genetic barriers to resistance for the most commonly used ARVs and describe the extent of cross-resistance between them. To describe the epidemiology of HIVDR, we summarize the prevalence and patterns of transmitted drug resistance (TDR) and acquired drug resistance (ADR) in both high-income and low- and middle-income countries (LMICs). We also review to two categories of HIVDR with important public health relevance: (i) pre-treatment drug resistance (PDR), a World Health Organization-recommended HIVDR surveillance metric and (ii) and pre-exposure prophylaxis (PrEP)-related drug resistance, a type of ADR that can impact clinical outcomes if present at the time of treatment initiation. To summarize the implications of HIVDR for patient management, we review the role of genotypic resistance testing and treatment practices in both high-income and LMIC settings. In high-income countries where drug resistance testing is part of routine care, such an understanding can help clinicians prevent virological failure and accumulation of further HIVDR on an individual level by selecting the most efficacious regimens for their patients. Although there is reduced access to diagnostic testing and to many ARVs in LMIC, understanding the scientific basis and clinical implications of HIVDR is useful in all regions in order to shape appropriate surveillance, inform treatment algorithms, and manage difficult cases. Copyright © 2016 Elsevier B

  12. Resisting Organizational Change

    Directory of Open Access Journals (Sweden)

    Gunnar Andersson

    2015-03-01

    Full Text Available We are continuously reminded of how change induces controversy and resistance, regardless of support. We repeatedly experience resistance in difficulties of implementation, little progress, and poor results, rather than increased productivity as anticipated. In a detailed account of how change plays out, a mosaic of what resistance looks like emerges. The picture is both familiar and absolutely concrete, and challenges the structural assumptions and dichotomies on support and resistance in an organization. The findings invite technologies, people, actions, practices and materiality to the discussions on support and resistance.

  13. Multidrug resistance associated proteins in multidrug resistance

    OpenAIRE

    Sodani, Kamlesh; Patel, Atish; Kathawala, Rishil J.; Chen, Zhe-Sheng

    2012-01-01

    Multidrug resistance proteins (MRPs) are members of the C family of a group of proteins named ATP-binding cassette (ABC) transporters. These ABC transporters together form the largest branch of proteins within the human body. The MRP family comprises of 13 members, of which MRP1 to MRP9 are the major transporters indicated to cause multidrug resistance in tumor cells by extruding anticancer drugs out of the cell. They are mainly lipophilic anionic transporters and are reported to transport fr...

  14. Influence of 120 MeV Au+9 ions irradiation on resistive switching properties of Cr:SrZrO3/SRO junctions

    Science.gov (United States)

    Bhavsar, Komal H.; Joshi, Utpal S.

    2016-07-01

    Swift heavy ion (SHI) irradiation has been successfully used to modify structural and electrical properties of heterostructured Cr doped SrZrO3 thin films grown on 200 nm thick SrRuO3/SiO2 by chemical solution deposition method. Samples were irradiated by 120 MeV Au+9 ions with fluence value 1 × 1012 ions/cm2 in order to investigate the influence of SHI irradiation on the resistive switching (RS) phenomenon. Structural characterization with grazing angle X-ray diffraction exhibited an enhancement of crystallinity as well as crystallographic strain. Typical energy dispersive analysis of X-rays (EDAX) spectrum was carried out to study the interface mixing, if any, after the ion irradiation. The pristine sample exhibits a narrow hysteresis loop in the current voltage (I-V) curves with maximum RS ratio of 98. Highly reproducible resistive switching characteristics with pronounced loops in the I-V curves have been observed for the irradiated Ag/Cr:SZO/SRO structure with maximum RS ratio of 985. I-V curves in low resistive state (LRS) demonstrate linear Ohmic conduction mechanism for both positive as well as negative bias region. The high resistive state (HRS) is consistent with space charge limited (SCLC) mechanism. The observed electrical behavior can be attributed to the high energy density of electronic excitations resulting from the impact of swift heavy ions induced defects and strain.

  15. Influence of 120 MeV Au{sup +9} ions irradiation on resistive switching properties of Cr:SrZrO{sub 3}/SRO junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bhavsar, Komal H.; Joshi, Utpal S., E-mail: usjoshi@gmail.com

    2016-07-15

    Swift heavy ion (SHI) irradiation has been successfully used to modify structural and electrical properties of heterostructured Cr doped SrZrO{sub 3} thin films grown on 200 nm thick SrRuO{sub 3}/SiO{sub 2} by chemical solution deposition method. Samples were irradiated by 120 MeV Au{sup +9} ions with fluence value 1 × 10{sup 12} ions/cm{sup 2} in order to investigate the influence of SHI irradiation on the resistive switching (RS) phenomenon. Structural characterization with grazing angle X-ray diffraction exhibited an enhancement of crystallinity as well as crystallographic strain. Typical energy dispersive analysis of X-rays (EDAX) spectrum was carried out to study the interface mixing, if any, after the ion irradiation. The pristine sample exhibits a narrow hysteresis loop in the current voltage (I–V) curves with maximum RS ratio of 98. Highly reproducible resistive switching characteristics with pronounced loops in the I–V curves have been observed for the irradiated Ag/Cr:SZO/SRO structure with maximum RS ratio of 985. I–V curves in low resistive state (LRS) demonstrate linear Ohmic conduction mechanism for both positive as well as negative bias region. The high resistive state (HRS) is consistent with space charge limited (SCLC) mechanism. The observed electrical behavior can be attributed to the high energy density of electronic excitations resulting from the impact of swift heavy ions induced defects and strain.

  16. Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

    Science.gov (United States)

    Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Gul, Jahan Zeb; Kim, Soo-Wan; Lim, Jong Hwan; Choi, Kyung Hyun

    2016-11-01

    Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device.

  17. Challenges to Resistance Welding

    DEFF Research Database (Denmark)

    Song, Quanfeng

    This report originates from the compulsory defense during my Ph.D. study at the Technical University of Denmark. Resistance welding is an old and well-proven technology. Yet the emergence of more and more new materials, new designs, invention off new joining techniques, and more stringent...... requirement in quality have imposed challenges to the resistance welding. More some research and development have to be done to adapt the old technology to the manufacturing industry of the 21st century. In the 1st part of the report, the challenging factors to the resistance welding are reviewed. Numerical...... simulation of resistance welding has been under development for many years. Yet it is no easy to make simulation results reliable and accurate because of the complexity of resistance welding process. In the 2nd part of the report numerical modeling of resistance welding is reviewed, some critical factors...

  18. Challenges to Resistance Welding

    DEFF Research Database (Denmark)

    Song, Quanfeng

    This report originates from the compulsory defense during my Ph.D. study at the Technical University of Denmark. Resistance welding is an old and well-proven technology. Yet the emergence of more and more new materials, new designs, invention off new joining techniques, and more stringent...... requirement in quality have imposed challenges to the resistance welding. More some research and development have to be done to adapt the old technology to the manufacturing industry of the 21st century. In the 1st part of the report, the challenging factors to the resistance welding are reviewed. Numerical...... simulation of resistance welding has been under development for many years. Yet it is no easy to make simulation results reliable and accurate because of the complexity of resistance welding process. In the 2nd part of the report numerical modeling of resistance welding is reviewed, some critical factors...

  19. Regicide and Resistance

    DEFF Research Database (Denmark)

    Flohr, Mikkel

    2016-01-01

    This article examines the role of resistance in Michel Foucault’s political thought. The article recovers this otherwise obscured aspect of Foucault’s thought through a systematic analysis of his theoretical regicide and consequent reconceptualization of power, agency and resistance. It is argued...... that Foucault developed a highly original account of resistance, which was, and should continue to be considered, central to his thought and its critical potential. It is shown how Foucault’s concept of resistance overcomes the limitation of voluntarism and determinism, which continue to mare contemporary...

  20. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... more understandable to non-scientists by showing how bacterial antimicrobial resistance can develop and spread. All FDA CVM ... Education Inspections & Compliance Federal, State & Local ...

  1. Resistance/reactance level.

    Science.gov (United States)

    Beutler, Larry E; Harwood, T Mark; Michelson, Aaron; Song, Xiaoxia; Holman, John

    2011-02-01

    Psychotherapists from all professions and perspectives periodically struggle to effectively manage a patient's resistance to change. This article provides definitions and examples of patient-treatment matching applied to patient resistance or reactance. We report the results from an original meta-analysis of 12 select studies (N = 1,102) on matching therapist directiveness to patient reactance. Our findings support the hypothesis that patients exhibiting low levels of trait-like resistance respond better to directive types of treatment, while patients with high levels of resistance respond best to nondirective treatments (d = .82). Limitations of the research reviewed are noted, and practice recommendations are advanced. © 2010 Wiley Periodicals, Inc.

  2. Surveillance of antibiotic resistance

    National Research Council Canada - National Science Library

    Johnson, Alan P

    2015-01-01

    .... Surveillance of antibiotic resistance involves the collection of antibiotic susceptibility test results undertaken by microbiology laboratories on bacteria isolated from clinical samples sent for investigation...

  3. Understanding and managing resistance.

    Science.gov (United States)

    Berger, D S

    1998-01-01

    As many as 25 to 45 percent of patients using triple therapy with protease inhibitors will develop resistance due to a change in the genetic HIV code. However, patients who develop resistance may still benefit clinically when protease inhibitors are used in combination with other antiretrovirals. These patients may not have undetectable viral loads although they may have stable T4-cell counts. Resistance does not always lead to disease progression. Newer drugs under development or available through compassionate track programs may benefit people with resistance. DMP-266 (Sustiva) is a non-nucleoside reverse transcriptase inhibitor that shows promise for these patients. Other drugs in development include Compound 141, 1592, and adefovir.

  4. Animation of Antimicrobial Resistance

    Science.gov (United States)

    ... Animal & Veterinary Cosmetics Tobacco Products Animal & ... antimicrobial resistance both emerges and proliferates among bacteria. Over time, the use of antimicrobial drugs will result in the development ...

  5. Design of a Resistively Heated Thermal Hydraulic Simulator for Nuclear Rocket Reactor Cores

    Science.gov (United States)

    Litchford, Ron J.; Foote, John P.; Ramachandran, Narayanan; Wang, Ten-See; Anghaie, Samim

    2007-01-01

    A preliminary design study is presented for a non-nuclear test facility which uses ohmic heating to replicate the thermal hydraulic characteristics of solid core nuclear reactor fuel element passages. The basis for this testing capability is a recently commissioned nuclear thermal rocket environments simulator, which uses a high-power, multi-gas, wall-stabilized constricted arc-heater to produce high-temperature pressurized hydrogen flows representative of reactor core environments, excepting radiation effects. Initially, the baseline test fixture for this non-nuclear environments simulator was configured for long duration hot hydrogen exposure of small cylindrical material specimens as a low cost means of evaluating material compatibility. It became evident, however, that additional functionality enhancements were needed to permit a critical examination of thermal hydraulic effects in fuel element passages. Thus, a design configuration was conceived whereby a short tubular material specimen, representing a fuel element passage segment, is surrounded by a backside resistive tungsten heater element and mounted within a self-contained module that inserts directly into the baseline test fixture assembly. With this configuration, it becomes possible to create an inward directed radial thermal gradient within the tubular material specimen such that the wall-to-gas heat flux characteristics of a typical fuel element passage are effectively simulated. The results of a preliminary engineering study for this innovative concept are fully summarized, including high-fidelity multi-physics thermal hydraulic simulations and detailed design features.

  6. Series resistance mapping of Cu(In,Ga)Se{sub 2} solar cells by voltage dependent electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Daume, Felix; Puttnins, Stefan [Solarion AG, Ostende 5, 04288 Leipzig (Germany); Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestr. 5, 04103 Leipzig (Germany); Scheit, Christian; Rahm, Andreas [Solarion AG, Ostende 5, 04288 Leipzig (Germany); Grundmann, Marius [Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestr. 5, 04103 Leipzig (Germany)

    2011-07-01

    Cu(In,Ga)Se{sub 2} (CIGSe) thin film solar cells deposited on flexible polyimide foil promising innovative applications and a fabrication in continuous roll-to-roll processes currently reach efficiencies up to 17.6 %. The optimization of the solar cell efficiency requires the reduction of inherent losses in the cell. In order to achieve this goal preferably spatially resolved access to parameters characterizing ohmic losses like series and shunt resistances are indispensable. We apply an interpretation method for electroluminescence (EL) images taken at different voltages which is known for solar cells made of crystalline silicon from literature to solar cells made of polycrystalline CIGSe. The theory of this method to obtain a mapping of the series resistance and the EL imaging process as well as the data interpretation ils reviewed and demonstrated on an example. Furthermore, the benefit of this method for the characterization of solar cells under accelerated aging conditions (damp heat) which is important for the estimation of the long-term stability is shown.

  7. Improving the performance of microbial fuel cells by reducing the inherent resistivity of carbon fiber brush anodes

    Science.gov (United States)

    Xie, Yang'en; Ma, Zhaokun; Song, Huaihe; Wang, Huiyao; Xu, Pei

    2017-04-01

    This study investigated the effect of carbon fibers as brush anode materials on the performance of microbial fuel cells (MFCs). Two types of carbon fibers with different electrical resistivity and functionality - polyacrylonitrile (PAN) (ρ: 28.0 μΩ m) and pitch (ρ: 2.05 μΩ m) were investigated. X-ray photoelectron spectroscopy analysis showed that the PAN- and pitch-based carbon fibers presented almost the same surface elements and functional groups, and there was no significant difference in microbial growth on the brush anodes. Current interrupt and steady discharging methods demonstrated the pitch-based carbon brush anodes had lower ohmic resistance and generated higher power density. After nitric acid treatment, the power density generated by the PAN- and pitch-based anodes increased by 29.3% and 26.7%, achieving 816 and 895 mW m-2, respectively. Using pitch-based carbon fiber brush as anode attained better performance than the widely used PAN-based carbon brush. The acid treated pitch-based carbon fibers provide a promising alternative to highly efficient anode materials for the extensive application of MFCs.

  8. Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching

    Science.gov (United States)

    Kim, Sungjun; Park, Byung-Gook

    2017-01-01

    In this letter, we compare three different types of reset switching behavior in a bipolar resistive random-access memory (RRAM) system that is housed in a Ni/Si3N4/Si structure. The abrupt, step-like gradual and continuous gradual reset transitions are largely determined by the low-resistance state (LRS). For abrupt reset switching, the large conducting path shows ohmic behavior or has a weak nonlinear current-voltage (I-V) characteristics in the LRS. For gradual switching, including both the step-like and continuous reset types, trap-assisted direct tunneling is dominant in the low-voltage regime, while trap-assisted Fowler-Nordheim tunneling is dominant in the high-voltage regime, thus causing nonlinear I-V characteristics. More importantly, we evaluate the multi-level capabilities of the two different gradual switching types, including both step-like and continuous reset behavior, using identical and incremental voltage conditions. Finer control of the conductance level with good uniformity is achieved in continuous gradual reset switching when compared to that in step-like gradual reset switching. For continuous reset switching, a single conducting path, which initially has a tunneling gap, gradually responds to pulses with even and identical amplitudes, while for step-like reset switching, the multiple conducting paths only respond to incremental pulses to obtain effective multi-level states.

  9. Impact of the Capacitance of the Dielectric on the Contact Resistance of Organic Thin-Film Transistors

    Science.gov (United States)

    Zojer, K.; Zojer, E.; Fernandez, A. F.; Gruber, M.

    2015-10-01

    As the operation of organic thin-film transistors relies exclusively on injected charge carriers, the gate-induced field assumes a dual role: It is responsible for charge-carrier accumulation and, provided that an injection barrier at the contact-semiconductor interface is present, aids charge-carrier injection across this barrier. Besides the gate-source bias, the thickness of the insulator and its dielectric constant influence the gate field. Here, we explore the impact of the capacitance of the gate dielectric on the performance of organic thin-film transistors utilizing drift-diffusion-based simulations comprising a self-consistent consideration of injection. Upon varying the capacitance of the insulating layer, we observe a conceptually different behavior for top-contact and bottom-contact architectures. Top-contact devices possess a nearly constant contact voltage in the linear regime leading to an apparent mobility lowering. In strong contrast, bottom-contact architectures possess non-Ohmic contact resistances in the linear regime due to a contact voltage whose value depends strongly on both the gate-source bias and the capacitance. Counterintuitively, this is accompanied by a mobility being apparently unaffected by the substantial contact resistance. Additionally, threshold-voltage shifts appear due to gate-limited injection. The latter is particularly dominant in bottom-contact architectures, where the threshold voltages steeply increase with the thickness of the insulating layer.

  10. A chemical solver to compute molecule and grain abundances and non-ideal MHD resistivities in prestellar core collapse calculations

    CERN Document Server

    Marchand, Pierre; Chabrier, Gilles; Hennebelle, Patrick; Commerçon, Benoit; Vaytet, Neil

    2016-01-01

    We develop a detailed chemical network relevant to the conditions characteristic of prestellar core collapse. We solve the system of time-dependent differential equations to calculate the equilibrium abundances of molecules and dust grains, with a size distribution given by size-bins for these latter. These abundances are used to compute the different non-ideal magneto-hydrodynamics resistivities (ambipolar, Ohmic and Hall), needed to carry out simulations of protostellar collapse. For the first time in this context, we take into account the evaporation of the grains, the thermal ionisation of Potassium, Sodium and Hydrogen at high temperature, and the thermionic emission of grains in the chemical network, and we explore the impact of various cosmic ray ionisation rates. All these processes significantly affect the non-ideal magneto-hydrodynamics resistivities, which will modify the dynamics of the collapse. Ambipolar diffusion and Hall effect dominate at low densities, up to n_H = 10^12 cm^-3, after which Oh...

  11. 圆柱形电极Zn-Cu电池中Joule热电阻和Ohmic电阻的理论研究%A theoretical study on the Joule heating resistance RJ and the Ohmic resistance RO of Zn-Cu Cells with cylindrical electrodes

    Institute of Scientific and Technical Information of China (English)

    杨以纲; 徐川; 秦军

    2006-01-01

    从理论上对Zn-Cu伏打电池中的Joule热电阻(RJ)和Ohmic电阻(RO)进行了研究.结果表明:当Zn-Cu伏打电池处于缓慢、均匀、稳定放电状态时,RJ>RO.这是因为RJ=Q/ I2,RJ涉及电流所带的离子,其大小取决于电能和化学能产生的热,RO=ΔU/ I,其值大小只取决于电能.

  12. African Women Writing Resistance

    Institute of Scientific and Technical Information of China (English)

    Jennifer Browdy de Hernandez; Pauline Dongala; Omotayo; Jolaosho; Anne Serafin

    2011-01-01

    AFRICAN Women Writing Resistance is the first transnational anthology to focus on women's strategies of resistance to the challenges they face in Africa today.The anthology brings together personal narratives,testimony,interviews,short stories,poetry,performance scripts,folktales and lyrics.

  13. Antimicrobial Resistant Streptococcus pneumoniae

    Directory of Open Access Journals (Sweden)

    B Khanal

    2010-09-01

    Full Text Available Introduction: Pneumococcal infections are important cause of morbidity and mortality. Knowledge of antimicrobial susceptibility patterns plays important role in the selection of appropriate therapy. Present study was undertaken to analyze the susceptibility patterns of pneumococcal isolates against commonly used antimicrobials with special reference to determination of minimum inhibitory concentration (MIC of penicillin in a tertiary care hospital in eastern Nepal. Methods: Twenty-six strains of S. pneumoniae isolated from various clinical specimens submitted to microbiology laboratory were evaluated. All isolates were tested for antimicrobial susceptibility by disk diffusion method. MIC of penicillin was tested by broth dilution method. Results: Of the total isolates 19 (73% were from invasive infections. Seven isolates were resistant to cotrimoxazole. No resistance to penicillin was seen in disk diffusion testing. Less susceptibility to penicillin (MIC 0.1-1.0 mg/L was observed in five (17% isolates. High level resistance to penicillin was not detected. One isolate was multidrug resistant. Conclusions: S. pneumoniaeisolates with intermediate resistance to penicillin prevail in Tertiary Care Hospital in eastern Nepal, causing invasive and noninvasive infections. As intermediate resistance is not detected in routine susceptibility testing, determination of MIC is important. It helps not only in the effective management of life threatening infections but is also essential in continuous monitoring and early detection of resistance. In addition, further study on pneumococcal infections, its antimicrobial resistance profile and correlation with clinical and epidemiological features including serotypes and group prevalence is recommended in future. Keywords: antimicrobial susceptibility pattern, penicillin, Streptococcus pneumoniae.

  14. Resistance to change

    NARCIS (Netherlands)

    Dow, J.; Perotti, E.

    2009-01-01

    Established firms often fail to maintain leadership following disruptive market shifts. We argue that such firms are more prone to internal resistance. A radical adjustment of assets affects the distribution of employee rents, creating winners and losers. Losers resist large changes when strong cust

  15. Resistance to change

    NARCIS (Netherlands)

    Dow, J.; Perotti, E.

    2013-01-01

    Established firms often fail to maintain leadership following disrup tive market shifts. We argue that such firms are more prone to internal resistance. A radical adjustment of assets affects the distribution of employee rents, creating winners and losers. Losers resist large changes when strong cus

  16. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Skip to common links HHS U.S. Department of Health and Human Services U.S. Food and Drug Administration ... Tobacco Products Animal & Veterinary Home Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet ...

  17. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... CVM produced material may be copied, reproduced, and distributed as long as FDA's Center for Veterinary Medicine ... More in Antimicrobial Resistance National Antimicrobial Resistance Monitoring ... Note: If you need help accessing information in different file formats, see Instructions for Downloading ...

  18. Glycosphingolipids and insulin resistance

    NARCIS (Netherlands)

    M. Langeveld; J.F.M.G. Aerts

    2009-01-01

    Obesity is associated with an increased risk for insulin resistance, a state characterized by impaired responsiveness of liver, muscle and adipose tissue to insulin. One class of lipids involved in the development of insulin resistance are the (glyco)sphingolipids. Ceramide, the most simple sphingol

  19. Engineered plant virus resistance.

    Science.gov (United States)

    Galvez, Leny C; Banerjee, Joydeep; Pinar, Hasan; Mitra, Amitava

    2014-11-01

    Virus diseases are among the key limiting factors that cause significant yield loss and continuously threaten crop production. Resistant cultivars coupled with pesticide application are commonly used to circumvent these threats. One of the limitations of the reliance on resistant cultivars is the inevitable breakdown of resistance due to the multitude of variable virus populations. Similarly, chemical applications to control virus transmitting insect vectors are costly to the farmers, cause adverse health and environmental consequences, and often result in the emergence of resistant vector strains. Thus, exploiting strategies that provide durable and broad-spectrum resistance over diverse environments are of paramount importance. The development of plant gene transfer systems has allowed for the introgression of alien genes into plant genomes for novel disease control strategies, thus providing a mechanism for broadening the genetic resources available to plant breeders. Genetic engineering offers various options for introducing transgenic virus resistance into crop plants to provide a wide range of resistance to viral pathogens. This review examines the current strategies of developing virus resistant transgenic plants.

  20. Resistance to change

    NARCIS (Netherlands)

    Dow, J.; Perotti, E.

    2013-01-01

    Established firms often fail to maintain leadership following disrup tive market shifts. We argue that such firms are more prone to internal resistance. A radical adjustment of assets affects the distribution of employee rents, creating winners and losers. Losers resist large changes when strong

  1. Resistance to change

    NARCIS (Netherlands)

    Dow, J.; Perotti, E.

    2009-01-01

    Established firms often fail to maintain leadership following disruptive market shifts. We argue that such firms are more prone to internal resistance. A radical adjustment of assets affects the distribution of employee rents, creating winners and losers. Losers resist large changes when strong

  2. Drug resistance in malaria

    Directory of Open Access Journals (Sweden)

    S C Parija

    2011-01-01

    Full Text Available Antimalarial chemotherapy is an important component of all malaria control programmes throughout the world. This is especially so in light of the fact that there are no antimalarial vaccines which are available for clinical use at present. Emergence and spread of malaria parasites which are resistant to many of the available antimalarials today is, therefore, a major cause for concern. Till date, resistance to all groups of antimalarials excluding artemisinin has been reported. In recent years, in vitro resistance to even artemisinin has been described. While resistance to antibacterial agents has come to prominence as a clinical problem in recent years, antiparasitic resistance in general and antimalarial resistance in particular has not received much attention, especially in the Indian scenario. The present review deals with commonly used antimalarial drugs and the mechanisms of resistance to them. Various methods of detecting antimalarial resistance and avoiding the same have also been dealt with. Newer parasite targets which can be used in developing newer antimalarial agents and antimalarials obtained from plants have also been mentioned.

  3. HIV resistance to raltegravir.

    Science.gov (United States)

    Clavel, Francois

    2009-11-24

    Similar to all antiretroviral drugs, failure of raltegravir-based treatment regimens to fully supress HIV replication almost invariably results in emergence of HIV resistance to this new drug. HIV resistance to raltegravir is the consequence of mutations located close to the integrase active site, which can be divided into three main evolutionary pathways: the N155H, the Q148R/H/K and the Y143R/C pathways. Each of these primary mutations can be accompanied by a variety of secondary mutations that both increase resistance and compensate for the variable loss of viral replicative capacity that is often associated with primary resistance mutations. One unique property of HIV resistance to raltegravir is that each of these different resistance pathways are mutually exclusive and appear to evolve separately on distinct viral genomes. Resistance is frequently initiated by viruses carrying mutations of the N155H pathway, followed by emergence and further dominance of viral genomes carrying mutations of the Q148R/H/K or of the Y143R/C pathways, which express higher levels of resistance. Even if some natural integrase polymorphisms can be part of this evolution process, these polymorphisms do not affect HIV susceptibility in the absence of primary mutations. Therefore, all HIV-1 subtypes and groups, together with HIV-2, are naturally susceptible to raltegravir. Finally, because interaction of integrase strand transfer inhibitors with the HIV integrase active site is comparable from one compound to another, raltegravir-resistant viruses express significant cross resistance to most other compounds of this new class of antiretroviral drugs.

  4. HIV resistance to raltegravir

    Directory of Open Access Journals (Sweden)

    Clavel François

    2009-11-01

    Full Text Available Abstract Similar to all antiretroviral drugs, failure of raltegravirbased treatment regimens to fully supress HIV replication almost invariably results in emergence of HIV resistance to this new drug. HIV resistance to raltegravir is the consequence of mutations located close to the integrase active site, which can be divided into three main evolutionary pathways: the N155H, the Q148R/H/K and the Y143R/C pathways. Each of these primary mutations can be accompanied by a variety of secondary mutations that both increase resistance and compensate for the variable loss of viral replicative capacity that is often associated with primary resistance mutations. One unique property of HIV resistance to raltegravir is that each of these different resistance pathways are mutually exclusive and appear to evolve separately on distinct viral genomes. Resistance is frequently initiated by viruses carrying mutations of the N155H pathway, followed by emergence and further dominance of viral genomes carrying mutations of the Q148R/H/K or of the Y143R/C pathways, which express higher levels of resistance. Even if some natural integrase polymorphisms can be part of this evolution process, these polymorphisms do not affect HIV susceptibility in the absence of primary mutations. Therefore, all HIV-1 subtypes and groups, together with HIV-2, are naturally susceptible to raltegravir. Finally, because interaction of integrase strand transfer inhibitors with the HIV integrase active site is comparable from one compound to another, raltegravir-resistant viruses express significant cross resistance to most other compounds of this new class of antiretroviral drugs.

  5. Echinocandin Resistance in Candida.

    Science.gov (United States)

    Perlin, David S

    2015-12-01

    Invasive fungal infections are an important infection concern for patients with underlying immunosuppression. Antifungal therapy is a critical component of patient care, but therapeutic choices are limited due to few drug classes. Antifungal resistance, especially among Candida species, aggravates the problem. The echinocandin drugs (micafungin, anidulafungin, and caspofungin) are the preferred choice to treat a range of candidiasis. They target the fungal-specific enzyme glucan synthase, which is responsible for the biosynthesis of a major cell wall polymer. Therapeutic failure involves acquisition of resistance, although it is a rare event among most Candida species. However, in some settings, higher-level resistance has been reported among Candida glabrata, which is also frequently resistant to azole drugs, resulting in difficult-to-treat multidrug-resistant strains. The mechanism of echinocandin resistance involves amino acid changes in "hot spot" regions of FKS-encoded subunits of glucan synthase, which decreases the sensitivity of enzyme to drug, resulting in higher minimum inhibitory concentration values. The cellular processes promoting the formation of resistant FKS strains involve complex stress response pathways that yield a variety of adaptive compensatory genetic responses. Standardized broth microdilution techniques can be used to distinguish FKS mutant strains from wild type, but testing C. glabrata with caspofungin should be approached cautiously. Finally, clinical factors that promote echinocandin resistance include prophylaxis, host reservoirs including biofilms in the gastrointestinal tract, and intra-abdominal infections. An understanding of clinical and molecular factors that promote echinocandin resistance is critical to develop better diagnostic tools and therapeutic strategies to overcome resistance. © The Author 2015. Published by Oxford University Press on behalf of the Infectious Diseases Society of America. All rights reserved. For

  6. HIV resistance testing and detected drug resistance in Europe

    NARCIS (Netherlands)

    Schultze, A.; Phillips, A.N.; Paredes, R.; Battegay, M.; Rockstroh, J.K.; Machala, L.; Tomazic, J.; Girard, P.M.; Januskevica, I.; Gronborg-Laut, K.; Lundgren, J.D.; Cozzi-Lepri, A.; Burger, D.M.

    2015-01-01

    OBJECTIVES: To describe regional differences and trends in resistance testing among individuals experiencing virological failure and the prevalence of detected resistance among those individuals who had a genotypic resistance test done following virological failure. DESIGN: Multinational cohort

  7. Linezolid Resistance in Staphylococci

    Directory of Open Access Journals (Sweden)

    Stefania Stefani

    2010-06-01

    Full Text Available Linezolid, the first oxazolidinone to be used clinically, is effective in the treatment of infections caused by various Gram-positive pathogens, including multidrug resistant enterococci and methicillin-resistant Staphylococus aureus. It has been used successfully for the treatment of patients with endocarditis and bacteraemia, osteomyelitis, joint infections and tuberculosis and it is often used for treatment of complicated infections when other therapies have failed. Linezolid resistance in Gram-positive cocci has been encountered clinically as well as in vitro, but it is still a rare phenomenon. The resistance to this antibiotic has been, until now, entirely associated with distinct nucleotide substitutions in domain V of the 23S rRNA genes. The number of mutated rRNA genes depends on the dose and duration of linezolid exposure and has been shown to influence the level of linezolid resistance. Mutations in associated ribosomal proteins also affect linezolid activity. A new phenicol and clindamycin resistance phenotype has recently been found to be caused by an RNA methyltransferase designated Cfr. This gene confers resistance to lincosamides, oxazolidinones, streptogramin A, phenicols and pleuromutilins, decrease the susceptibility of S. aureus to tylosin, to josamycin and spiramycin and thus differs from erm rRNA methylase genes. Research into new oxazolidinones with improved characteristics is ongoing. Data reported in patent applications demonstrated that some oxazolidinone derivatives, also with improved characteristics with respect to linezolid, are presently under study: at least three of them are in an advanced phase of development.

  8. Addressing antibiotic resistance.

    Science.gov (United States)

    Gupta, Kalpana

    2003-02-01

    Management of uncomplicated urinary tract infections (UTIs) has traditionally been based on 2 important principles: the spectrum of organisms causing acute UTI is highly predictable (Escherichia coli accounts for 75% to 90% and Staphylococcus saprophyticus accounts for 5% to 15% of isolates), and the susceptibility patterns of these organisms have also been relatively predictable. As a result, empiric therapy with short-course trimethoprim-sulfamethoxazole (TMP-SMX) has been a standard management approach for uncomplicated cystitis.However, antibiotic resistance is now becoming a major factor not only in nosocomial complicated UTIs, but also in uncomplicated community-acquired UTIs. Resistance to TMP-SMX now approaches 18% to 22% in some regions of the United States, and nearly 1 in 3 bacterial strains causing cystitis or pyelonephritis demonstrate resistance to amoxicillin. Fortunately, resistance to other agents, such as nitrofurantoin and the fluoroquinolones, has remained low, at approximately 2%. Preliminary data suggest that the increase in TMP-SMX resistance is associated with poorer bacteriologic and clinical outcomes when TMP-SMX is used for therapy. As a result, these trends have necessitated a change in the management approach to community-acquired UTI. The use of TMP-SMX as a first-line agent for empiric therapy of uncomplicated cystitis is only appropriate in areas where TMP-SMX resistance prevalence is resistance to TMP-SMX exceeds this rate, alternative agents need to be considered.

  9. Antibiotic-Resistant Gonorrhea (ARG)

    Science.gov (United States)

    ... please visit this page: About CDC.gov . Gonorrhea Antibiotic Resistance Basic Information Laboratory Information Resources & References Combating the ... Page Surveillance Trends and Treatment Challenges Laboratory Issues Antibiotic resistance (AR) is the ability of bacteria to resist ...

  10. Antibiotic Resistance Questions and Answers

    Science.gov (United States)

    ... on the Farm Get Smart About Antibiotics Week Antibiotic Resistance Questions and Answers Language: English (US) Español ( ... Many ear infections Top of Page Questions about Antibiotic Resistance Examples of How Antibiotic Resistance Spreads Click for ...

  11. Genetics Home Reference: clopidogrel resistance

    Science.gov (United States)

    ... Me Understand Genetics Home Health Conditions clopidogrel resistance clopidogrel resistance Enable Javascript to view the expand/collapse boxes. Download PDF Open All Close All Description Clopidogrel resistance is a condition in which the drug ...

  12. Multidrug-resistant tuberculosis

    Directory of Open Access Journals (Sweden)

    McNerney Ruth

    2008-01-01

    Full Text Available Abstract Background With almost 9 million new cases each year, tuberculosis remains one of the most feared diseases on the planet. Led by the STOP-TB Partnership and WHO, recent efforts to combat the disease have made considerable progress in a number of countries. However, the emergence of mutated strains of Mycobacterium tuberculosis that are resistant to the major anti-tuberculosis drugs poses a deadly threat to control efforts. Multidrug-resistant tuberculosis (MDR-TB has been reported in all regions of the world. More recently, extensively drug resistant-tuberculosis (XDR-TB that is also resistant to second line drugs has emerged in a number of countries. To ensure that adequate resources are allocated to prevent the emergence and spread of drug resistance it is important to understand the scale of the problem. In this article we propose that current methods of describing the epidemiology of drug resistant tuberculosis are not adequate for this purpose and argue for the inclusion of population based statistics in global surveillance data. Discussion Whereas the prevalence of tuberculosis is presented as the proportion of individuals within a defined population having disease, the prevalence of drug resistant tuberculosis is usually presented as the proportion of tuberculosis cases exhibiting resistance to anti-tuberculosis drugs. Global surveillance activities have identified countries in Eastern Europe, the former Soviet Union and regions of China as having a high proportion of MDR-TB cases and international commentary has focused primarily on the urgent need to improve control in these settings. Other regions, such as sub-Saharan Africa have been observed as having a low proportion of drug resistant cases. However, if one considers the incidence of new tuberculosis cases with drug resistant disease in terms of the population then countries of sub-Saharan Africa have amongst the highest rates of transmitted MDR-TB in the world. We propose

  13. Resistance to Powdery Mildews

    DEFF Research Database (Denmark)

    Siwoszek, Agnieszka Izabela

    how the basic resistance components contribute to resistance against powdery mildews. Furthermore, I propose an alternative strategy of achieving resistance to barley powdery mildew by application of peptide aptamers. Peptide aptamers are small proteins selected to specifically target conserved Yx......C motif of barley powdery mildew effectors. I present a proof-of-concept study in Arabidopsis, where overexpression of peptide aptamers significantly reduced the susceptibility to barley powdery mildew. Moreover, I set the discovery in a bigger context by summarizing genetic engineering technologies...

  14. Hydraulic resistance of biofilms

    KAUST Repository

    Dreszer, C.

    2013-02-01

    Biofilms may interfere with membrane performance in at least three ways: (i) increase of the transmembrane pressure drop, (ii) increase of feed channel (feed-concentrate) pressure drop, and (iii) increase of transmembrane passage. Given the relevance of biofouling, it is surprising how few data exist about the hydraulic resistance of biofilms that may affect the transmembrane pressure drop and membrane passage. In this study, biofilms were generated in a lab scale cross flow microfiltration system at two fluxes (20 and 100Lm-2h-1) and constant cross flow (0.1ms-1). As a nutrient source, acetate was added (1.0mgL-1 acetate C) besides a control without nutrient supply. A microfiltration (MF) membrane was chosen because the MF membrane resistance is very low compared to the expected biofilm resistance and, thus, biofilm resistance can be determined accurately. Transmembrane pressure drop was monitored. As biofilm parameters, thickness, total cell number, TOC, and extracellular polymeric substances (EPS) were determined, it was demonstrated that no internal membrane fouling occurred and that the fouling layer actually consisted of a grown biofilm and was not a filter cake of accumulated bacterial cells. At 20Lm-2h-1 flux with a nutrient dosage of 1mgL-1 acetate C, the resistance after 4 days reached a value of 6×1012m-1. At 100Lm-2h-1 flux under the same conditions, the resistance was 5×1013m-1. No correlation of biofilm resistance to biofilm thickness was found; Biofilms with similar thickness could have different resistance depending on the applied flux. The cell number in biofilms was between 4×107 and 5×108 cellscm-2. At this number, bacterial cells make up less than a half percent of the overall biofilm volume and therefore did not hamper the water flow through the biofilm significantly. A flux of 100Lm-2h-1 with nutrient supply caused higher cell numbers, more biomass, and higher biofilm resistance than a flux of 20Lm-2h-1. However, the biofilm thickness

  15. Mechanisms of drug resistance: daptomycin resistance.

    Science.gov (United States)

    Tran, Truc T; Munita, Jose M; Arias, Cesar A

    2015-09-01

    Daptomycin (DAP) is a cyclic lipopeptide with in vitro activity against a variety of Gram-positive pathogens, including multidrug-resistant organisms. Since its introduction into clinical practice in 2003, DAP has become an important key frontline antibiotic for severe or deep-seated infections caused by Gram-positive organisms. Unfortunately, DAP resistance (DAP-R) has been extensively documented in clinically important organisms such as Staphylococcus aureus, Enterococcus spp., and Streptococcus spp. Studies on the mechanisms of DAP-R in Bacillus subtilis and other Gram-positive bacteria indicate that the genetic pathways of DAP-R are diverse and complex. However, a common phenomenon emerging from these mechanistic studies is that DAP-R is associated with important adaptive changes in cell wall and cell membrane homeostasis with critical changes in cell physiology. Findings related to these adaptive changes have provided novel insights into the genetics and molecular mechanisms of bacterial cell envelope stress response and the manner in which Gram-positive bacteria cope with the antimicrobial peptide attack and protect vital structures of the cell envelope, such as the cell membrane. In this review, we will examine the most recent findings related to the molecular mechanisms of resistance to DAP in relevant Gram-positive pathogens and discuss the clinical implications for therapy against these important bacteria.

  16. Multidrug resistance associated proteins in multidrug resistance

    Institute of Scientific and Technical Information of China (English)

    Kamlesh Sodani; Atish Patel; Rishil J. Kathawala; Zhe-Sheng Chen

    2012-01-01

    Multidrug resistance proteins (MRPs) are members of the C family of a group of proteins named ATP-binding cassette (ABC) transporters.These ABC transporters together form the largest branch of proteins within the human body.The MRP family comprises of 13 members,of which MRP1 to MRP9 are the major transporters indicated to cause multidrug resistance in tumor cells by extruding anticancer drugs out of the cell.They are mainly lipophilic anionic transporters and are reported to transport free or conjugates of glutathione (GSH),glucuronate,or sulphate.In addition,MRP1 to MRP3 can transport neutral organic drugs in free form in the presence of free GSH.Collectively,MRPs can transport drugs that differ structurally and mechanistically,including natural anticancer drugs,nucleoside analogs,antimetabolites,and tyrosine kinase inhibitors.Many of these MRPs transport physiologically important anions such as leukotriene C4,bilirubin glucuronide,and cyclic nucleotides.This review focuses mainly on the physiological functions,cellular resistance characteristics,and probable in vivo role of MRP1 to MRP9.

  17. Bipolar resistive switching properties of Ti-CuO/(hexafluoro-hexa-peri-hexabenzocoronene)-Cu hybrid interface device: Influence of electronic nature of organic layer

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Bharti; Mehta, B. R.; Varandani, Deepak [Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Govind [Surface Physics Group, National Physical Laboratory (CSIR), New Delhi-110012 (India); Narita, A.; Feng, X.; Muellen, K. [Max-Planck Institute for Polymer Research, D-55128 Mainz (Germany)

    2013-05-28

    This study reports the change in the structural and junction properties of Ti-CuO-Cu structure on incorporation of a 2-dimensional (2D) organic layer comprising of n-type hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC). A bipolar resistive switching is observed in the device having interface between sputter deposited copper oxide (CuO) and vacuum sublimated 6F-HBC hybrid interface. The CuO/6F-HBC hybrid interface exhibits rectifying I-V characteristics in complete contrast to the ohmic and rectifying characteristics of junctions based on individual 6F-HBC and CuO layers. Large change in resistive switching property from unipolar resistive switching in CuO/HBC to bipolar resistive switching in CuO/6F-HBC interface was observed. At the CuO/6F-HBC interface, C1s peak corresponding to fluorinated carbon is shifted by 0.68 eV towards higher binding energy (BE) side and O1s peak due to non-lattice oxygen is shifted by 0.6 eV towards lower BE, confirming the interaction of O{sup 2-} ion in CuO with fluorinated carbon atoms in 6F-HBC at the hybrid interface. Correlation between conductive atomic force microscopy images and atomic force microscopy topography images, I-V characteristics in conducting, non-conducting, and pristine regions along with x-ray photoelectron spectroscopy results establishes the important role of hybrid interface to determining the resistive switching properties. This study demonstrates that the resistive switching and interface properties of a hybrid device based on inorganic and organic 2D materials can be modified by changing the electronic properties of organic layer by attaching suitable functional groups.

  18. Steroid resistant asthma.

    Science.gov (United States)

    Luhadia, S K

    2014-03-01

    Inspite of very safe and effective treatment, Bronchial asthmatics do not respond well in 5-10% of cases which are labelled as Refractory Asthma. Besides compliance, presence of psychogenic and trigger factors and comorbid illness, steroid insensitiveness or resistance may play a significant role in the poorly controlled/responding asthmatics. Type I Steroid resistance is due to lack of binding affinity of steroids to glucocorticoid receptors and may respond to higher doses of steroids while type II steroid resistance is because of reduced number of cells with glucocorticoid receptors, which is very rare and do not respond to even higher doses of systemic steroids and these cases require alternative/novel therapies. Future treatment of steroid resistant and severe refractory asthma is likely to be targeted towards cytokines and Bronchial Thermoplasty.

  19. Glucocorticoid feedback resistance.

    Science.gov (United States)

    De Kloet, E R; Vreugdenhil, E; Oitzl, M S; Joëls, M

    1997-01-01

    Glucocorticoid feedback resistance can be inherited or locally acquired. The implications of these two forms of resistance for disease are strikingly different. The inherited form is characterized by enhanced adrenocortical function and hypercorticism to compensate for a generalized deficit in the glucocorticoid receptor gene, but these individuals lack symptoms of Cushing's syndrome. By contrast, resistance acquired at the level of the hypothalamic corticotropin-releasing hormone (CRH) neurons is linked to hypercorticism, which is not compensatory but overexposes the rest of the body and the brain to glucocorticoids. This cell-specific glucocorticoid resistance can be acquired by genetically predisposed individuals failing to cope with (early) life events and causes enhanced vulnerability to disease-specific actions of glucocorticoids. (c) 1997, Elsevier Science Inc. (Trends Endocrinol Metab 1997; 8:26-33).

  20. CONFERENCE REPORT ANTIRETROVIRAL RESISTANCE

    African Journals Online (AJOL)

    selection of NNRTI-resistant virus should therefore come as no surprise. The consequences of suboptimal nevirapine use are probably not unique to .... Africa) frequently has a natural polymorphism at codon 93 in the protease gene known as ...

  1. Piggyback resistive Micromegas

    CERN Document Server

    Attié, D; Durand, D; Desforge, D; Ferrer-Ribas, E; Galán, J; Giomataris, Y; Gongadze, A; Iguaz, F J; Jeanneau, F; de Oliveira, R; Papaevangelou, T; Peyaud, A; Teixeira, A

    2013-01-01

    Piggyback Micromegas consists in a novel readout architecture where the anode element is made of a resistive layer on a ceramic substrate. The resistive layer is deposited on the thin ceramic substrate by an industrial process which provides large dynamic range of resistivity (10$^6$ to 10$^{10}$\\,M$\\Omega$/square). The particularity of this new structure is that the active part is entirely dissociated from the read-out element. This gives a large flexibility on the design of the anode structure and the readout scheme. Without significant loss, signals are transmitted by capacitive coupling to the read-out pads. The detector provides high gas gain, good energy resolution and the resistive layer assures spark protection for the electronics. This assembly could be combined with modern pixel array electronic ASICs. First tests with different Piggyback detectors and configurations will be presented. This structure is adequate for cost effective fabrication and low outgassing detectors. It was designed to perform ...

  2. Solvent resistant nanofiltration membranes

    OpenAIRE

    Dutczak, S.M.

    2011-01-01

    This thesis describes preparation and characterization of membranes for organic solvent filtration (OSF). The main aim was developing membranes for solvent resistant nanofiltration (SRNF) with molecular weight cut-off below 500 g mol-1.

  3. Insulin Resistance and Atherosclerosis

    National Research Council Canada - National Science Library

    Nigro, Julie; Osman, Narin; Dart, Anthony M; Little, Peter J

    2006-01-01

    ... morbidity and mortality. It is only now being recognized that the major antecedent of type 2 diabetes, insulin resistance with its attendant syndrome, is the major underlying cause of the susceptibility to type 2 diabetes...

  4. HIV Resistance Testing

    Science.gov (United States)

    ... tube when ARVs are added. Genotypic resistance: The genetic code of HIV has mutations that are linked to ... phenotypic tests are somewhat quicker. GENOTYPIC TESTING The genetic code of the sample virus is compared to the ...

  5. Tetracycline Antibiotics and Resistance.

    Science.gov (United States)

    Grossman, Trudy H

    2016-04-01

    Tetracyclines possess many properties considered ideal for antibiotic drugs, including activity against Gram-positive and -negative pathogens, proven clinical safety, acceptable tolerability, and the availability of intravenous (IV) and oral formulations for most members of the class. As with all antibiotic classes, the antimicrobial activities of tetracyclines are subject to both class-specific and intrinsic antibiotic-resistance mechanisms. Since the discovery of the first tetracyclines more than 60 years ago, ongoing optimization of the core scaffold has produced tetracyclines in clinical use and development that are capable of thwarting many of these resistance mechanisms. New chemistry approaches have enabled the creation of synthetic derivatives with improved in vitro potency and in vivo efficacy, ensuring that the full potential of the class can be explored for use against current and emerging multidrug-resistant (MDR) pathogens, including carbapenem-resistant Enterobacteriaceae, MDR Acinetobacter species, and Pseudomonas aeruginosa.

  6. Antimicrobial (Drug) Resistance

    Science.gov (United States)

    ... the past 70 years, antimicrobial drugs, such as antibiotics, have been successfully used to treat patients with bacterial and infectious diseases. Why Is the Study of Antimicrobial (Drug) Resistance a Priority for NIAID? Over time, many infectious ...

  7. Antibiotics and Resistance: Glossary

    Science.gov (United States)

    ... chromosomes and plasmids. Transposons often carry genes specifying antimicrobial resistance. Virus An extremely small infective agent, visible only with an electron microscope. Viruses can cause disease in humans, animals and plants. Viruses consist of a protein coat ...

  8. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Animal & Veterinary Cosmetics Tobacco Products Animal & ... antimicrobial resistance both emerges and proliferates among bacteria. Over time, the use of antimicrobial drugs will result in the development ...

  9. [Resistance profile of rilpivirine].

    Science.gov (United States)

    Imaz, Arkaitz; García, Federico; di Yacovo, Silvana; Llibre, Josep M

    2013-06-01

    Rilpivirine (RPV) is a new second-generation nonnucleoside reverse transcriptase inhibitor (NNRTI) approved for use in combination with two nucleoside/nucleotide reverse transcriptase inhibitors (NRTI) as initial therapy in treatment-naïve HIV-1-infected patients with a baseline viral load ≤100,000 copies/mL. RPV is a diarylpyrimidine derivative with potent in vitro activity against multiple HIV-1 variants with resistance mutations to first-generation NNRTI such as K103N. In vitro studies and phase III clinical trials have allowed the identification of 16 mutations associated with resistance to RPV K101E/P, E138A/G/K/Q/R, V179L, Y181C/I/V, Y188L, H221Y, F227C and M230I/L. The risk of virologic failure in patients receiving RPV plus 2 NRTI with plasma viral load ≤ 100,000 copies/mL is low, but a high percentage of patients failing RPV develop resistance mutations to both RPV and NRTI. The most common resistance mutation that emerges in this setting is E138K. This mutation is usually associated with M184I due to a double compensatory effect of this combination, which confers resistance to RPV, as well as to lamivudine and emtricitabine. The emergence of RPV resistance confers cross-resistance to all NNRTI and, importantly, high percentages of cross-resistance to etravirine. Copyright © 2013 Elsevier España, S.L. All rights reserved.

  10. Rolling resistance of tires

    Energy Technology Data Exchange (ETDEWEB)

    Junio, M.; Roesgen, A.; Corvasce, F. [Goodyear Technical Center Luxembourg, Colmar-Berg (Luxembourg)

    1999-07-01

    After a review of the contribution of tire rolling resistance to fuel economy, the tire rolling resistance is defined and measurement methods discussed. The significant effects of the 'external' factors such as load, inflation, temperature, speed, etc. that are not controlled by the tire developers, are reviewed. Tire construction changes that reduce deformations and compound changes reducing hysteresis are discussed and information is provided on what has been achieved so far and what might be done in the future. (orig.)

  11. Stab resistant body armour

    OpenAIRE

    Horsfall, Ian

    2000-01-01

    There is now a widely accepted need for stab resistant body armour for the police in the UK. However, very little research has been done on knife resistant systems and the penetration mechanics of sharp projectiles are poorly understood. This thesis explores the general background to knife attack and defence with a particular emphasis on the penetration mechanics of edged weapons. The energy and velocity that can be achieved in stabbing actions has been determined for a numb...

  12. Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

    Science.gov (United States)

    Rana, Anwar Manzoor; Akbar, Tahira; Ismail, Muhammad; Ahmad, Ejaz; Hussain, Fayyaz; Talib, Ijaz; Imran, Muhammad; Mehmood, Khalid; Iqbal, Khalid; Nadeem, M. Younus

    2017-01-01

    Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region. PMID:28079056

  13. Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

    Science.gov (United States)

    Rana, Anwar Manzoor; Akbar, Tahira; Ismail, Muhammad; Ahmad, Ejaz; Hussain, Fayyaz; Talib, Ijaz; Imran, Muhammad; Mehmood, Khalid; Iqbal, Khalid; Nadeem, M. Younus

    2017-01-01

    Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

  14. Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material.

    Science.gov (United States)

    Rana, Anwar Manzoor; Akbar, Tahira; Ismail, Muhammad; Ahmad, Ejaz; Hussain, Fayyaz; Talib, Ijaz; Imran, Muhammad; Mehmood, Khalid; Iqbal, Khalid; Nadeem, M Younus

    2017-01-12

    Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~10(2)) and no significant data degradation during endurance test of >10(4) switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

  15. Approach to the effect of concrete resistivity in the corrosion of rebars in concrete

    Directory of Open Access Journals (Sweden)

    Andrade, C.

    1987-09-01

    Full Text Available The concrete resistivity has been considered as a factor which affects the corrosion rate of the rebars. Untill now the only relation found has been stablished between potentials and resistivity for steel embedded in Chloride contaminated concrete. In this paper a comparison between corrosion rate of rebars, determined from Polarization Resistance method, and Electrical Resistance data measured through the electronic compensation of the ohmic drop are given. The results of icorr and Rohm has been measured for rebars embedded in mortar made with three different types of cement. The specimens were submited to an accelerated carbonation. The relation between icorr and Rohm is quite similar in all the cases and suggests that the concrete electrical resistivity may be a controling factor of the corrosion rate of the rebars.

    La resistividad del hormigón se ha venido considerando como uno de los factores que afectan a la velocidad de corrosión de las armaduras, aunque, hasta ahora, la única relación encontrada ha sido la establecida entre los potenciales y la resistividad para acero embebido en hormigón contaminado por cloruros. En este trabajo se establecen comparaciones entre velocidad de corrosión de las armaduras, medida a través del método de determinación de la Resistencia de Polarización, y los datos de resistencia eléctrica medidos a través de la compensación de caída óhmica. Los resultados de icorr y Rohm se han medido en armaduras embebidas en mortero fabricado con tres tipos de cemento a los que se ha sometido a un proceso de carbonatación acelerada. La relación entre icorr y Rohm es muy similar en todos los casos y sugiere que la resistencia del hormigón puede actuar como un factor controlante de la velocidad de corrosión de las armaduras.

  16. Resistant starches and health.

    Science.gov (United States)

    Kendall, Cyril W C; Emam, Azadeh; Augustin, Livia S A; Jenkins, David J A

    2004-01-01

    It was initially hypothesized that resistant starches, i.e., starch that enters the colon, would have protective effects on chronic colonic diseases, including reduction of colon cancer risk and in the treatment of ulcerative colitis. Recent studies have confirmed the ability of resistant starch to increase fecal bulk, increase the molar ratio of butyrate in relation to other short-chain fatty acids, and dilute fecal bile acids. However the ability of resistant starch to reduce luminal concentrations of compounds that are damaging to the colonic mucosa, including fecal ammonia, phenols, and N-nitroso compounds, still requires clear demonstration. As such, the effectiveness of resistant starch in preventing or treating colonic diseases remains to be assessed. Nevertheless, there is a fraction of what has been termed resistant (RS1) starch, which enters the colon and acts as slowly digested or lente carbohydrate in the small intestine. Foods in this class are low glycemic index and have been shown to reduce the risk of chronic disease. They have been associated with systemic physiological effects such as reduced postprandial insulin levels and higher HDL cholesterol levels. Consumption of low glycemic index foods has been shown to be related to reductions in risk of coronary heart disease and Type 2 diabetes. Type 2 diabetes has in turn been related to a higher risk of colon cancer. If carbohydrates have a protective role in colon cancer prevention this may lie partly in the systemic effects of low glycemic index foods. The colonic advantages of different carbohydrates, varying in their glycemic index and resistant starch content, therefore, remain to be determined. However, as recent positive research findings continue to mount, there is reason for optimism over the possible health advantages of those resistant starches, which are slowly digested in the small intestine.

  17. Linezolid resistant Staphylococcus aureus

    Directory of Open Access Journals (Sweden)

    Pavani Gandham

    2014-08-01

    Full Text Available Linezolid is the only antibiotic available as an oral formulation for resistant staphylococcal infections. It is effective in skin and soft tissue infections, nosocomial pneumonias including VAP, infective endocarditis and MRSA meningitis. It is also effective in the eradication of both nasal and throat colonization of MRSA. Its high bioavailability and post antibiotic effect, ease of switching to oral therapy during its use and the fact that it can be used in patients of all ages, also in patients with liver disease and poor kidney function and its increased effectiveness over glycopeptides makes this drug a precious drug in the treatment of resistant staphylococcal infections. Linezolid resistance in staphylococcus is defined as a linezolid MIC of and #8805;8 mg/L. Reported Linezolid resistance in India and elsewhere is 2-20%. There is clonal dissemination of Linezolid Resistant Staphylococcus aureus (LRSA within or across health care settings which demands continuous surveillance to determine the emergent risk of resistance strains and to establish guidelines for appropriate use. Clinical laboratories should confirm any LRSA preferably by a second method, prior to using linezolid for serious infections. Effective surveillance, more judicious use of this antibiotic, avoiding linezolid usage for empiric therapy in hospital acquired staphylococcus infections, optimization of the pharmacological parameters of the antibiotics in specific clinical situation, decreasing bacterial load by timely surgical debridement or drainage of collections, use of combination therapies would prevent the emergence of resistance to linezolid in staphylococcus aureus. [Int J Res Med Sci 2014; 2(4.000: 1253-1256

  18. Electromigration early resistance increase measurements

    OpenAIRE

    Niehof, J; Flinn, P. A.; Maloney, T.J.

    1993-01-01

    An early resistance change measurement set-up, using an AC bridge technique, has been developed, and measurements have been performed. Large sample-to-sample variations occur. The characteristic time for the resistance change curve is shorter for resistance increase (under current stress) than for resistance decay (during recovery).

  19. Desiccation resistance in Arcobacter butzleri

    Directory of Open Access Journals (Sweden)

    Otth Laura

    2001-01-01

    Full Text Available The desiccation resistance of A. butzleri was studied. Two, 3 and 4 of the strains did not resist desiccation for more than 2, 12 and 36 h, respectively. Two strains resisted desiccation for > 48 h. A. butzleri seems to be more resistant to desiccation than the classical enteropathogenic Campylobacter species.

  20. Antibiotic Resistance in Acne Treatment.

    Science.gov (United States)

    Adler, Brandon L; Kornmehl, Heather; Armstrong, April W

    2017-08-01

    What is the evidence for antibiotic resistance in acne, and how does resistance affect treatment? Use of topical and systemic antibiotics for acne is associated with formation of resistance in Propionibacterium acnes and other bacteria, with clinical consequences. Guidelines recommend resistance reduction strategies including avoidance of antibiotic monotherapy, combination treatment with topical modalities, and limiting the duration of oral antibiotic use.

  1. Clopidogrel Resistance: Current Issues

    Directory of Open Access Journals (Sweden)

    NS Neki

    2016-05-01

    Full Text Available Antiplatelet agents are mainly used in the prevention and management of atherothrombotic complications. Dual antiplatelet therapy, combining aspirin and clopidogrel, is the standard care for patients having acute coronary syndromes or undergoing percutaneous coronary intervention according to the current ACC/AHA and ESC guidelines. But in spite of administration of dual antiplatelet therapy, some patients develop recurrent cardiovascular ischemic events especially stent thrombosis which is a serious clinical problem. Antiplatelet response to clopidogrel varies widely among patients based on ex vivo platelet function measurements. Clopidogrel is an effective inhibitor of platelet activation and aggregation due to its selective and irreversible blockade of the P2Y12 receptor. Patients who display little attenuation of platelet reactivity with clopidogrel therapy are labeled as low or nonresponders or clopidogrel resistant. The mechanism of clopidogrel resistance remains incompletely defined but there are certain clinical, cellular and genetic factors including polymorphisms responsible for therapeutic failure. Currently there is no standardized or widely accepted definition of clopidogrel resistance. The future may soon be realised in the routine measurement of platelet activity in the same way that blood pressure, cholesterol and blood sugar are followed to help guide the therapy, thus improving the care for millions of people. This review focuses on the methods used to identify patients with clopidogrel resistance, the underlying mechanisms, metabolism, clinical significance and current therapeutic strategies to overcome clopidogrel resistance. J Enam Med Col 2016; 6(1: 38-46

  2. MSMA resistance studies.

    Science.gov (United States)

    Camper, N D; Keese, R J; Coker, P S

    2004-05-01

    Monosodium methanearsonate (MSMA)-resistant and -susceptible common cocklebur (Xanthium strumarium L.) and cotton (Gossypium hirsutum L.) were treated with MSMA. Plant parameters analyzed were: glutathione synthetase activity, selected amino acid (arginine, glutamic acid, alanine, citrulline, glutamine, and glutathione) content and arsenic content (MSMA, total arsenic, and arsonate). No reduction of arsenic from the parent pentavalent form present in MSMA to the trivalent form was detected. Arginine, glutamic acid, and glutamine content increased in tissue three days after MSMA treatment. Glutathione content decreased during the first three days after treatment; however, five days after treatment the resistant biotype of cocklebur and cotton had elevated glutathione levels (8-20 times greater, respectively). Glutathione Synthetase activity was higher in cotton than in either of the cocklebur biotypes; MSMA did not affect its activity in cotton or either cocklebur biotype. Resistant biotypes have a slightly higher activity than the susceptible biotype. Tolerance of cotton to MSMA may be related to glutathione synthetase activity and possibly to the presence of phytochelatins. Also, increased glutathione levels in the resistant biotype may implicate phytochelatin involvement in the resistance mechanism.

  3. Spore Resistance Properties.

    Science.gov (United States)

    Setlow, Peter

    2014-10-01

    Spores of various Bacillus and Clostridium species are among the most resistant life forms known. Since the spores of some species are causative agents of much food spoilage, food poisoning, and human disease, and the spores of Bacillus anthracis are a major bioweapon, there is much interest in the mechanisms of spore resistance and how these spores can be killed. This article will discuss the factors involved in spore resistance to agents such as wet and dry heat, desiccation, UV and γ-radiation, enzymes that hydrolyze bacterial cell walls, and a variety of toxic chemicals, including genotoxic agents, oxidizing agents, aldehydes, acid, and alkali. These resistance factors include the outer layers of the spore, such as the thick proteinaceous coat that detoxifies reactive chemicals; the relatively impermeable inner spore membrane that restricts access of toxic chemicals to the spore core containing the spore's DNA and most enzymes; the low water content and high level of dipicolinic acid in the spore core that protect core macromolecules from the effects of heat and desiccation; the saturation of spore DNA with a novel group of proteins that protect the DNA against heat, genotoxic chemicals, and radiation; and the repair of radiation damage to DNA when spores germinate and return to life. Despite their extreme resistance, spores can be killed, including by damage to DNA, crucial spore proteins, the spore's inner membrane, and one or more components of the spore germination apparatus.

  4. Biological improvement of radiation resistance

    Energy Technology Data Exchange (ETDEWEB)

    Chun, K. J.; Lee, Y. K.; Kim, J. S.; Kim, J. K.; Lee, S. J

    2000-08-01

    To investigate the mechanisms of gene action related to the radiation resistance in microorganisms could be essentially helpful for the development of radiation protectants and hormeric effects of low dose radiation. This book described isolation of radiation-resistant microorganisms, induction of radiation-resistant and functionally improved mutants by gamma-ray radiation, cloning and analysis of the radiation resistance related genes and analysis of the expressed proteins of the radiation resistant related genes.

  5. Resistance to Insecticides in Insects

    OpenAIRE

    2005-01-01

    In recent years, the frequent usage of insecticides in struggle aganist insects, has caused development of resistance to those chemicals in insects. The increase in dosage of insecticide used due to development of resistance in insects, causes important problems in terms of environment and human health. This study includes topics such as insecticides which are used frequently in insect struggle, insecticide resistant types, genetic changes posing resistance, enzymes of resistance and resistan...

  6. Viscous, Resistive Magnetorotational Modes

    CERN Document Server

    Pessah, Martin E

    2008-01-01

    We carry out a comprehensive analysis of the behavior of the magnetorotational instability (MRI) in viscous, resistive plasmas. We find exact, non-linear solutions of the non-ideal magnetohydrodynamic (MHD) equations describing the local dynamics of an incompressible, differentially rotating background threaded by a vertical magnetic field when disturbances with wavenumbers perpendicular to the shear are considered. We provide a geometrical description of these viscous, resistive MRI modes and show how their physical structure is modified as a function of the Reynolds and magnetic Reynolds numbers. We demonstrate that when finite dissipative effects are considered, velocity and magnetic field disturbances are no longer orthogonal (as it is the case in the ideal MHD limit) unless the magnetic Prandtl number is unity. We generalize previous results found in the ideal limit and show that a series of key properties of the mean Reynolds and Maxwell stresses also hold for the viscous, resistive MRI. In particular, ...

  7. Treatment-Resistant Schizophrenia

    DEFF Research Database (Denmark)

    Howes, Oliver D; McCutcheon, Rob; Agid, Ofer

    2017-01-01

    OBJECTIVE: Research and clinical translation in schizophrenia is limited by inconsistent definitions of treatment resistance and response. To address this issue, the authors evaluated current approaches and then developed consensus criteria and guidelines. METHOD: A systematic review of randomized...... antipsychotic clinical trials in treatment-resistant schizophrenia was performed, and definitions of treatment resistance were extracted. Subsequently, consensus operationalized criteria were developed through 1) a multiphase, mixed methods approach, 2) identification of key criteria via an online survey, and 3...... impairment; 3) prior treatment consisting of at least two different antipsychotic trials, each for a minimum duration and dosage; 4) systematic monitoring of adherence and meeting of minimum adherence criteria; 5) ideally at least one prospective treatment trial; and 6) criteria that clearly separate...

  8. Pyrethroid resistance in mosquitoes

    Institute of Scientific and Technical Information of China (English)

    NANNAN LIU; QIANG XU; FANG ZHU; LEE ZHANG

    2006-01-01

    Repeated blood feedings throughout their life span have made mosquitoes ideal transmitters of a wide variety of disease agents. Vector control is a very important part of the current global strategy for the control of mosquito-associated diseases and insecticide application is the most important component in this effort. Pyrethroids, which account for 25% of the world insecticide market, are currently the most widely used insecticides for the indoor control of mosquitoes and are the only chemical recommended for the treatment of mosquito nets, the main tool for preventing malaria in Africa. However, mosquito-borne diseases are now resurgent, largely because of insecticide resistance that has developed in mosquito vectors and the anti-parasite drug resistance of parasites. This paper reviews our current knowledge of the molecular mechanisms governing metabolic detoxification and the development of target site insensitivity that leads to pyrethroid resistance in mosquitoes.

  9. Heat-resistant materials

    CERN Document Server

    1997-01-01

    This handbook covers the complete spectrum of technology dealing with heat-resistant materials, including high-temperature characteristics, effects of processing and microstructure on high-temperature properties, materials selection guidelines for industrial applications, and life-assessment methods. Also included is information on comparative properties that allows the ranking of alloy performance, effects of processing and microstructure on high-temperature properties, high-temperature oxidation and corrosion-resistant coatings for superalloys, and design guidelines for applications involving creep and/or oxidation. Contents: General introduction (high-temperature materials characteristics, and mechanical and corrosion properties, and industrial applications); Properties of Ferrous Heat-Resistant Alloys (carbon, alloy, and stainless steels; alloy cast irons; and high alloy cast steels); Properties of superalloys (metallurgy and processing, mechanical and corrosion properties, degradation, and protective coa...

  10. Generalized effective medium resistivity model for low resistivity reservoir

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    With the advancement in oil exploration,producible oil and gas are being found in low resistivity reservoirs,which may otherwise be erroneously thought as water zones from their resistivity.However,the evaluation of low resistivity reservoirs remains difficult from log interpretation.Since low resistivity in hydrocarbon bearing sands can be caused by dispersed clay,laminated shale,conductive matrix grains,microscopic capillary pores and high saline water,a new resistivity model is required for more accurate hydrocarbon saturation prediction for low resistivity formations.Herein,a generalized effective medium resistivity model has been proposed for low resistivity reservoirs,based on experimental measurements on artificial low resistivity shaly sand samples,symmetrical anisotropic effective medium theory for resistivity interpretations,and geneses and conductance mechanisms of low resistivity reservoirs.By analyzing effects of some factors on the proposed model,we show theoretically the model can describe conductance mechanisms of low resistivity reservoirs with five geneses.Also,shale distribution largely affects water saturation predicted by the model.Resistivity index decreases as fraction and conductivity of laminated shale,or fraction of dispersed clay,or conductivity of rock matrix grains increases.Resistivity index decreases as matrix percolation exponent,or percolation rate of capillary bound water increases,and as percolation exponent of capillary bound water,or matrix percolation rate,or free water percolation rate decreases.Rock sample data from low resistivity reservoirs with different geneses and interpretation results for log data show that the proposed model can be applied in low resistivity reservoirs containing high salinity water,dispersed clay,microscopic capillary pores,laminated shale and conductive matrix grains,and thus is considered as a generalized resistivity model for low resistivity reservoir evaluation.

  11. Generalized effective medium resistivity model for low resistivity reservoir

    Institute of Scientific and Technical Information of China (English)

    SONG YanJie; TANG XiaoMin

    2008-01-01

    With the advancement in oil exploration, producible oil and gas are being found in low resistivity reservoirs, which may otherwise be erroneously thought as water zones from their resistivity. However,the evaluation of low resistivity reservoirs remains difficult from log interpretation. Since low resistivity in hydrocarbon bearing sands can be caused by dispersed clay, laminated shale, conductive matrix grains, microscopic capillary pores and high saline water, a new resistivity model is required for more accurate hydrocarbon saturation prediction for low resistivity formations. Herein, a generalized effective medium resistivity model has been proposed for low resistivity reservoirs, based on experimental measurements on artificial low resistivity shaly sand samples, symmetrical anisotropic effective medium theory for resistivity interpretations, and geneses and conductance mechanisms of low resistivity reservoirs. By analyzing effects of some factors on the proposed model, we show theoretically the model can describe conductance mechanisms of low resistivity reservoirs with five geneses. Also,shale distribution largely affects water saturation predicted by the model. Resistivity index decreases as fraction and conductivity of laminated shale, or fraction of dispersed clay, or conductivity of rock matrix grains increases. Resistivity index decreases as matrix percolation exponent, or percolation rate of capillary bound water increases, and as percolation exponent of capillary bound water, or matrix percolation rate, or free water percolation rate decreases. Rock sample data from low resistivity reservoirs with different geneses and interpretation results for log data show that the proposed model can be applied in low resistivity reservoirs containing high salinity water, dispersed clay, microscopic capillary pores, laminated shale and conductive matrix grains, and thus is considered as a generalized resistivity model for low resistivity reservoir evaluation.

  12. Kinetically Controlled Drug Resistance

    DEFF Research Database (Denmark)

    Sun, Xin E.; Hansen, Bjarne Gram; Hedstrom, Lizbeth

    2011-01-01

    The filamentous fungus Penicillium brevicompactum produces the immunosuppressive drug mycophenolic acid (MPA), which is a potent inhibitor of eukaryotic IMP dehydrogenases (IMPDHs). IMPDH catalyzes the conversion of IMP to XMP via a covalent enzyme intermediate, E-XMP*; MPA inhibits by trapping E...... of resistance is not apparent. Here, we show that, unlike MPA-sensitive IMPDHs, formation of E-XMP* is rate-limiting for both PbIMPDH-A and PbIMPDH-B. Therefore, MPA resistance derives from the failure to accumulate the drug-sensitive intermediate....

  13. Measurement of Dynamic Resistance in Resistance Spot Welding

    DEFF Research Database (Denmark)

    Wu, Pei; Zhang, Wenqi; Bay, Niels

    Through years, the dynamic resistance across the electrodes has been used for weld quality estimation and contact resistance measurement. However, the previous methods of determining the dynamic resistance were mostly based on measuring the voltage and current on the secondary side...... of the transformer in resistance welding machines, implying defects from induction noise and interference with the leads connected to the electrodes for measuring the voltage. In this study, the dynamic resistance is determined by measuring the voltage on the primary side and the current on the secondary side......, as another application, the proposed method is used to measure the faying surface contact resistance....

  14. Measurement of Dynamic Resistance in Resistance Spot Welding

    DEFF Research Database (Denmark)

    Wu, Pei; Zhang, Wenqi; Bay, Niels

    Through years, the dynamic resistance across the electrodes has been used for weld quality estimation and contact resistance measurement. However, the previous methods of determining the dynamic resistance were mostly based on measuring the voltage and current on the secondary side...... of the transformer in resistance welding machines, implying defects from induction noise and interference with the leads connected to the electrodes for measuring the voltage. In this study, the dynamic resistance is determined by measuring the voltage on the primary side and the current on the secondary side......, as another application, the proposed method is used to measure the faying surface contact resistance....

  15. Advances in pneumococcal antibiotic resistance.

    Science.gov (United States)

    Song, Jae-Hoon

    2013-10-01

    Antimicrobial resistance and serotypes in Streptococcus pneumoniae have been evolving with the widespread use of antibiotics and the introduction of pneumococcal conjugate vaccines (PCV). Particularly, among various types of antimicrobial resistance, macrolide resistance has most remarkably increased in many parts of the world, which has been reported to be >70% among clinical isolates from Asian countries. Penicillin resistance has dramatically decreased among nonmeningeal isolates due to the changes in resistance breakpoints, although resistance to other β-lactams such as cefuroxime has increased. Multidrug resistance became a serious concern in the treatment of invasive pneumococcal diseases, especially in Asian countries. After PCV7 vaccination, serotype 19A has emerged as an important cause of invasive pneumococcal diseases which was also associated with increasing prevalence of multidrug resistance in pneumococci. Widespread use of PCV13, which covers additional serotypes 3, 6A and 19A, may contribute to reduce the clonal spread of drug-resistant 19A pneumococci.

  16. Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

    Science.gov (United States)

    Zhang, Wei; Kong, Ji-Zhou; Cao, Zheng-Yi; Li, Ai-Dong; Wang, Lai-Guo; Zhu, Lin; Li, Xin; Cao, Yan-Qiang; Wu, Di

    2017-06-01

    The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trilayer-structure units has been investigated. Both Pt/HfO2/TiO2/HfO2/Pt and Pt/HfO2/TiO2/HfO2/TiN exhibit typical bipolar resistive switching behavior. The dominant conduction mechanisms in low and high resistance states (LRS and HRS) of both memory cells are Ohmic behavior and space-charge-limited current, respectively. It is found that the bottom electrodes of Pt and TiN have great influence on the electroforming polarity preference, ratio of high and low resistance, and dispersion of the operating voltages of trilayer-structure memory cells. Compared to using symmetric Pt top/bottom electrodes, the RRAM cells using asymmetric Pt top/TiN bottom electrodes show smaller negative forming voltage of -3.7 V, relatively narrow distribution of the set/reset voltages and lower ratio of high and low resistances of 102. The electrode-dependent electroforming polarity can be interpreted by considering electrodes' chemical activity with oxygen, the related reactions at anode, and the nonuniform distribution of oxygen vacancy concentration in trilayer-structure of HfO2/TiO2/HfO2 on Pt- and TiN-coated Si. Moreover, for Pt/HfO2/TiO2/HfO2/TiN devices, the TiN electrode as oxygen reservoir plays an important role in reducing forming voltage and improving uniformity of resistive switching parameters.

  17. Oseltamivir-Resistant Flu

    Centers for Disease Control (CDC) Podcasts

    2012-04-13

    Dr. Aaron Storms, an Epidemic Intelligence Service (EIS) officer at CDC, discusses his paper about oseltamivir-resistant H1N1flu.  Created: 4/13/2012 by National Center for Emerging and Zoonotic Infectious Diseases (NCEZID).   Date Released: 4/17/2012.

  18. Overcoming Resistance to Change

    Science.gov (United States)

    Hull, Ted H.; Balka, Don S.; Miles, Ruth Harbin

    2010-01-01

    Resistance to change is a major obstacle in developing and implementing effective instructional programs, yet it is rarely considered, discussed, or addressed. The school leaders who are responsible for improvement frequently feel that their efforts are being blocked or thwarted. For the most part, they are correct, but they may not realize that…

  19. Viscous, Resistive Magnetorotational Modes

    DEFF Research Database (Denmark)

    Pessah, Martin Elias; Chan, Chi-kwan

    2008-01-01

    We carry out a comprehensive analysis of the behavior of the magnetorotational instability (MRI) in viscous, resistive plasmas. We find exact, non-linear solutions of the non-ideal magnetohydrodynamic (MHD) equations describing the local dynamics of an incompressible, differentially rotating...

  20. Supporting IDP resistance strategies

    Directory of Open Access Journals (Sweden)

    Poe Shan K Phan

    2008-01-01

    Full Text Available Whether in hiding or living under military control, displacedvillagers of Karen State and other areas of rural Burmahave shown themselves to be innovative and courageousin responding to and resisting military abuse. Theyurgently need increased assistance but it is they whoshould determine the direction of any such intervention.

  1. Fluoroquinolone resistance in Campylobacter

    Science.gov (United States)

    Fluoroquinolone-resistant Campylobacter jejuni and C. coli are common in animals because of the use of fluoroquinolones as therapeutic agents in animal husbandry, particularly in chickens and other poultry. Campylobacter is a commensal in poultry, and therefore, poultry and poultry products are the...

  2. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... En Español Search FDA Submit search Popular Content Home Food Drugs Medical Devices Radiation-Emitting Products Vaccines, ... Biologics Animal & Veterinary Cosmetics Tobacco Products Animal & Veterinary Home Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of ...

  3. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... use of antimicrobial drugs will result in the development of resistant strains of bacteria, complicating clinician's efforts ... Português | Italiano | Deutsch | 日本語 | فارسی | English FDA Accessibility Careers FDA Basics FOIA No FEAR Act Site Map ...

  4. Antibiotic-Resistant Bacteria.

    Science.gov (United States)

    Longenecker, Nevin E.; Oppenheimer, Dan

    1982-01-01

    A study conducted by high school advanced bacteriology students appears to confirm the hypothesis that the incremental administration of antibiotics on several species of bacteria (Escherichia coli, Staphylococcus epidermis, Bacillus sublitus, Bacillus megaterium) will allow for the development of antibiotic-resistant strains. (PEB)

  5. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... use of antimicrobial drugs will result in the development of resistant strains of bacteria, complicating clinician's efforts to select the appropriate antimicrobial for treatment. Accordingly, efforts are underway in both veterinary and human medicine to preserve the effectiveness of these drugs. ...

  6. Infinite resistive lattices

    NARCIS (Netherlands)

    Atkinson, D; van Steenwijk, F.J.

    The resistance between two arbitrary nodes in an infinite square lattice of:identical resistors is calculated, The method is generalized to infinite triangular and hexagonal lattices in two dimensions, and also to infinite cubic and hypercubic lattices in three and more dimensions. (C) 1999 American

  7. Antibiotic Resistance and Fungus

    Centers for Disease Control (CDC) Podcasts

    2017-02-28

    Dr. David Denning, President of the Global Action Fund for Fungal Infections and an infectious diseases clinician, discusses antimicrobial resistance and fungus.  Created: 2/28/2017 by National Center for Emerging and Zoonotic Infectious Diseases (NCEZID).   Date Released: 2/28/2017.

  8. PRESSURE-RESISTANT VESSEL

    NARCIS (Netherlands)

    Beukers, A.; De Jong, T.

    1997-01-01

    Abstract of WO 9717570 (A1) The invention is directed to a wheel-shaped pressure-resistant vessel for gaseous, liquid or liquefied material having a substantially rigid shape, said vessel comprising a substantially continuous shell of a fiber-reinforced resin having a central opening, an inner l

  9. Resistive Effects in EXTRAP

    Science.gov (United States)

    Tendler, M.

    1987-02-01

    Theoretical studies of the resistive equilibrium and stability of an EXTRAP Z-pinch are reported. Extending the previous analysis we reassess properties of the resistive equilibrium in EXTRAP with the emphasis on the time dependence of the latter. We also qualitatively consider the role of resistive instabilities in EXTRAP, showing that the typical timescale of the filamentation of the discharge (i.e., the non-linear development of the tearing instability) is comparable, at present, to the discharge duration. On the other hand, we emphasize that this phenomenon may still be consistent with the experimental observation of the Bennet's equilibrium. The processes of the current start-up and ramp-up are also analysed for EXTRAP and it is shown that the peculiarities of these processes may lead to the compression oscillations around an evolving rather stable equilibrium. Finally, some consequences of the average minimum-B concept for EXTRAP are discussed and it is shown that this issue virtually reduces to the appearance of the negative curvature of the magnetic field at the periphery. The maximum attainable value of β at the periphery of the pinch is obtained, as required by the ballooning stability criterion. The influence of the finite resistivity on the ballooning mode is also estimated.

  10. Selective leptin resistance revisited

    Science.gov (United States)

    2013-01-01

    In addition to effects on appetite and metabolism, leptin influences many neuroendocrine and physiological systems, including the sympathetic nervous system. Building on my Carl Ludwig Lecture of the American Physiological Society, I review the sympathetic and cardiovascular actions of leptin. The review focuses on a critical analysis of the concept of selective leptin resistance (SLR) and the role of leptin in the pathogenesis of obesity-induced hypertension in both experimental animals and humans. We introduced the concept of SLR in 2002 to explain how leptin might increase blood pressure (BP) in obese states, such as diet-induced obesity (DIO), that are accompanied by partial leptin resistance. This concept, analogous to selective insulin resistance in the metabolic syndrome, holds that in several genetic and acquired models of obesity, there is preservation of the renal sympathetic and pressor actions of leptin despite attenuation of the appetite and weight-reducing actions. Two potential overlapping mechanisms of SLR are reviewed: 1) differential leptin molecular signaling pathways that mediate selective as opposed to universal leptin action and 2) brain site-specific leptin action and resistance. Although the phenomenon of SLR in DIO has so far focused on preservation of sympathetic and BP actions of leptin, consideration should be given to the possibility that this concept may extend to preservation of other actions of leptin. Finally, I review perplexing data on the effects of leptin on sympathetic activity and BP in humans and its role in human obesity-induced hypertension. PMID:23883674

  11. Antimicrobial resistance in Canada

    Science.gov (United States)

    Conly, John

    2002-01-01

    Antibiotic resistance has increased rapidly during the last decade, creating a serious threat to the treatment of infectious diseases. Canada is no exception to this worldwide phenomenon. Data from the Canadian Nosocomial Infection Surveillance Program have revealed that the incidence of methicillin-resistant Staphylococcus aureus, as a proportion of S. aureus isolates, increased from 1% in 1995 to 8% by the end of 2000, and vancomycin-resistant enterococcus has been documented in all 10 provinces since the first reported outbreak in 1995. The prevalence of nonsusceptible Streptococcus pneumoniae in Canada in 2000 was found to be 12%. Human antimicrobial prescriptions, adjusted for differences in the population, declined 11% based on the total number of prescriptions dispensed between 1995 and 2000. There was also a 21% decrease in β-lactam prescriptions during this same period. These data suggest that systematic efforts to reduce unnecessary prescribing of antimicrobials to outpatients in Canada, beginning after a national consensus conference in 1997, may be having an impact. There is, however, still a need for continued concerted efforts on a national, provincial and regional level to quell the rising tide of antibiotic resistance. PMID:12406948

  12. Impact resistant electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Veith, Gabriel M.; Armstrong, Beth L.; Tenhaeff, Wyatt E.; Dudney, Nancy J.

    2017-03-07

    A passively impact resistant composite electrolyte composition includes an electrolyte solvent, up to 2M of an electrolyte salt, and shear thickening ceramic particles having a polydispersity index of no greater than 0.1, an average particle size of in a range of 50 nm to 1 .mu.m, and an absolute zeta potential of greater than .+-.40 mV.

  13. Are Sewage Treatment Plants Promoting Antibiotic Resistance?

    Science.gov (United States)

    1. Introduction 1.1. How bacteria exhibit resistance 1.1.1. Resistance to -lactams 1.1.2. Resistance to sulphonamides and trimethoprim 1.1.3. Resistance to macrolides 1.1.4. Resistance to fluoroquinolones 1.1.5. Resistance to tetracyclines 1.1.6. Resistance to nitroimidaz...

  14. Are Sewage Treatment Plants Promoting Antibiotic Resistance?

    Science.gov (United States)

    1. Introduction 1.1. How bacteria exhibit resistance 1.1.1. Resistance to -lactams 1.1.2. Resistance to sulphonamides and trimethoprim 1.1.3. Resistance to macrolides 1.1.4. Resistance to fluoroquinolones 1.1.5. Resistance to tetracyclines 1.1.6. Resistance to nitroimidaz...

  15. Retroviral superinfection resistance

    Directory of Open Access Journals (Sweden)

    van der Kuyl Antoinette C

    2005-08-01

    Full Text Available Abstract The retroviral phenomenon of superinfection resistance (SIR defines an interference mechanism that is established after primary infection, preventing the infected cell from being superinfected by a similar type of virus. This review describes our present understanding of the underlying mechanisms of SIR established by three characteristic retroviruses: Murine Leukaemia Virus (MuLV, Foamy Virus (FV, and Human Immunodeficiency Virus (HIV. In addition, SIR is discussed with respect to HIV superinfection of humans. MuLV resistant mice exhibit two genetic resistance traits related to SIR. The cellular Fv4 gene expresses an Env related protein that establishes resistance against MuLV infection. Another mouse gene (Fv1 mediates MuLV resistance by expression of a sequence that is distantly related to Gag and that blocks the viral infection after the reverse transcription step. FVs induce two distinct mechanisms of superinfection resistance. First, expression of the Env protein results in SIR, probably by occupancy of the cellular receptors for FV entry. Second, an increase in the concentration of the viral Bet (Between-env-and-LTR-1-and-2 protein reduces proviral FV gene expression by inhibition of the transcriptional activator protein Tas (Transactivator of spumaviruses. In contrast to SIR in FV and MuLV infection, the underlying mechanism of SIR in HIV-infected cells is poorly understood. CD4 receptor down-modulation, a major characteristic of HIV-infected cells, has been proposed to be the main mechanism of SIR against HIV, but data have been contradictory. Several recent studies report the occurrence of HIV superinfection in humans; an event associated with the generation of recombinant HIV strains and possibly with increased disease progression. The role of SIR in protecting patients from HIV superinfection has not been studied so far. The phenomenon of SIR may also be important in the protection of primates that are vaccinated with live

  16. Mission Critical: Preventing Antibiotic Resistance

    Science.gov (United States)

    ... file Error processing SSI file Mission Critical: Preventing Antibiotic Resistance Recommend on Facebook Tweet Share Compartir Can you ... spp. So, what can we do to prevent antibiotic resistance in healthcare settings? Patients, healthcare providers, healthcare facility ...

  17. Galileo's Trajectory with Mild Resistance

    Science.gov (United States)

    Groetsch, C. W.

    2012-01-01

    An aspect of Galileo's classical trajectory that persists in a simple resistance model is noted. The resistive model provides a case study for the classroom analysis of limiting behaviour of an implicitly defined function. (Contains 1 note.)

  18. Heavy resistance training and lymphedema

    DEFF Research Database (Denmark)

    Bloomquist, Kira; Karlsmark, Tonny; Christensen, Karl Bang

    2014-01-01

    BACKGROUND: There is limited knowledge regarding progressive resistance training during adjuvant chemotherapy and the risk of developing breast cancer-related lymphedema (BCRL). Furthermore, no studies have investigated the safety of resistance training with heavy loads (> 80% 1 repetition maximum...

  19. Metabolic Resistance in Bed Bugs

    Directory of Open Access Journals (Sweden)

    Omprakash Mittapalli

    2011-03-01

    Full Text Available Blood-feeding insects have evolved resistance to various insecticides (organochlorines, pyrethroids, carbamates, etc. through gene mutations and increased metabolism. Bed bugs (Cimex lectularius are hematophagous ectoparasites that are poised to become one of the major pests in households throughout the United States. Currently, C. lectularius has attained a high global impact status due to its sudden and rampant resurgence. Resistance to pesticides is one factor implicated in this phenomenon. Although much emphasis has been placed on target sensitivity, little to no knowledge is available on the role of key metabolic players (e.g., cytochrome P450s and glutathione S-transferases towards pesticide resistance in C. lectularius. In this review, we discuss different modes of resistance (target sensitivity, penetration resistance, behavioral resistance, and metabolic resistance with more emphasis on metabolic resistance.

  20. Helping Teens Resist Sexual Pressure

    Science.gov (United States)

    ... Size Email Print Share Helping Teens Resist Sexual Pressure Page Content Article Body Teens are more likely ... time they had intercourse. Helping Teens Resist Sexual Pressure “The pressure on teenagers to have sex is ...

  1. Metabolic Resistance in Bed Bugs.

    Science.gov (United States)

    Mamidala, Praveen; Jones, Susan C; Mittapalli, Omprakash

    2011-03-18

    Blood-feeding insects have evolved resistance to various insecticides (organochlorines, pyrethroids, carbamates, etc.) through gene mutations and increased metabolism. Bed bugs (Cimex lectularius) are hematophagous ectoparasites that are poised to become one of the major pests in households throughout the United States. Currently, C. lectularius has attained a high global impact status due to its sudden and rampant resurgence. Resistance to pesticides is one factor implicated in this phenomenon. Although much emphasis has been placed on target sensitivity, little to no knowledge is available on the role of key metabolic players (e.g., cytochrome P450s and glutathione S-transferases) towards pesticide resistance in C. lectularius. In this review, we discuss different modes of resistance (target sensitivity, penetration resistance, behavioral resistance, and metabolic resistance) with more emphasis on metabolic resistance.

  2. Molecular Diagnosis of Entecavir Resistance

    OpenAIRE

    Murat Sayan

    2010-01-01

    Entecavir (ETV) is a potent nucleoside analogue against hepatitis B virus (HBV). Because of development of ETV resistance requires at least three amino acid substitutions in HBV polymerase (pol) gene, emergence of ETV resistance is rare (~1%) in nucleoside-naive patients after up to 5 years of treatment. However, it has been suggested that lamivudine (LAM) therapy can preselect for HBV variants associated with resistance to ETV treatment. ETV resistance increased to 51% of patients after 5 ye...

  3. Antibacterial resistance: an emerging 'zoonosis'?

    Science.gov (United States)

    Labro, Marie-Thérèse; Bryskier, Jean-Marie

    2014-12-01

    Antibacterial resistance is a worldwide threat, and concerns have arisen about the involvement of animal commensal and pathogenic bacteria in the maintenance and spread of resistance genes. However, beyond the facts related to the occurrence of resistant microorganisms in food, food-producing animals and companion animals and their transmission to humans, it is important to consider the vast environmental 'resistome', the selective pathways underlying the emergence of antibacterial resistance and how we can prepare answers for tomorrow.

  4. Bacterial vaccines and antibiotic resistance

    OpenAIRE

    Henriques-Normark, Birgitta; Normark, Staffan

    2014-01-01

    Spread of antibiotic resistance is mediated by clonal lineages of bacteria that besides being resistant also possess other properties promoting their success. Some vaccines already in use, such as the pneumococcal conjugate vaccines, have had an effect on these successful clones, but at the same time have allowed for the expansion and resistance evolution of previously minor clones not covered by the vaccine. Since resistance frequently is horizontally transferred it will be difficult to gene...

  5. Clopidogrel resistance: The way forward

    OpenAIRE

    Ray, Shuvanan

    2014-01-01

    Clopidogrel, a second generation thienopyridine has been the mainstay of ACS (Acute Coronary Syndrome) treatment for more than a decade. Clopidogrel Resistance has been associated with increased mortality in ACS patients with an increase in number of Stent Thrombosis. This review article tries to find out the causes of Clopidogrel Resistance, the main factors involving it, Laboratory evaluation of Clopidogrel Resistance. The overall incidence of Clopidogrel Resistance across the Globe & India...

  6. Corrosion-resistant metal surfaces

    Science.gov (United States)

    Sugama, Toshifumi [Wading River, NY

    2009-03-24

    The present invention relates to metal surfaces having thereon an ultrathin (e.g., less than ten nanometer thickness) corrosion-resistant film, thereby rendering the metal surfaces corrosion-resistant. The corrosion-resistant film includes an at least partially crosslinked amido-functionalized silanol component in combination with rare-earth metal oxide nanoparticles. The invention also relates to methods for producing such corrosion-resistant films.

  7. Resistance patterns, prevalence, and predictors of fluoroquinolones resistance in multidrug resistant tuberculosis patients.

    Science.gov (United States)

    Ahmad, Nafees; Javaid, Arshad; Sulaiman, Syed Azhar Syed; Ming, Long Chiau; Ahmad, Izaz; Khan, Amer Hayat

    2016-01-01

    Fluoroquinolones are the backbone of multidrug resistant tuberculosis treatment regimens. Despite the high burden of multidrug resistant tuberculosis in the country, little is known about drug resistance patterns, prevalence, and predictors of fluoroquinolones resistance among multidrug resistant tuberculosis patients from Pakistan. To evaluate drug resistance patterns, prevalence, and predictors of fluoroquinolones resistance in multidrug resistant tuberculosis patients. This was a cross-sectional study conducted at a programmatic management unit of drug resistant tuberculosis, Lady Reading Hospital Peshawar, Pakistan. Two hundred and forty-three newly diagnosed multidrug resistant tuberculosis patients consecutively enrolled for treatment at study site from January 1, 2012 to July 28, 2013 were included in the study. A standardized data collection form was used to collect patients' socio-demographic, microbiological, and clinical data. SPSS 16 was used for data analysis. High degree of drug resistance (median 5 drugs, range 2-8) was observed. High proportion of patients was resistant to all five first-line anti-tuberculosis drugs (62.6%), and more than half were resistant to second line drugs (55.1%). The majority of the patients were ofloxacin resistant (52.7%). Upon multivariate analysis previous tuberculosis treatment at private (OR=1.953, p=0.034) and public private mix (OR=2.824, p=0.046) sectors were predictors of ofloxacin resistance. The high degree of drug resistance observed, particularly to fluoroquinolones, is alarming. We recommend the adoption of more restrictive policies to control non-prescription sale of fluoroquinolones, its rational use by physicians, and training doctors in both private and public-private mix sectors to prevent further increase in fluoroquinolones resistant Mycobacterium tuberculosis strains. Copyright © 2015 Elsevier Editora Ltda. All rights reserved.

  8. Resistance patterns, prevalence, and predictors of fluoroquinolones resistance in multidrug resistant tuberculosis patients

    Directory of Open Access Journals (Sweden)

    Nafees Ahmad

    Full Text Available Abstract Background Fluoroquinolones are the backbone of multidrug resistant tuberculosis treatment regimens. Despite the high burden of multidrug resistant tuberculosis in the country, little is known about drug resistance patterns, prevalence, and predictors of fluoroquinolones resistance among multidrug resistant tuberculosis patients from Pakistan. Objective To evaluate drug resistance patterns, prevalence, and predictors of fluoroquinolones resistance in multidrug resistant tuberculosis patients. Methods This was a cross-sectional study conducted at a programmatic management unit of drug resistant tuberculosis, Lady Reading Hospital Peshawar, Pakistan. Two hundred and forty-three newly diagnosed multidrug resistant tuberculosis patients consecutively enrolled for treatment at study site from January 1, 2012 to July 28, 2013 were included in the study. A standardized data collection form was used to collect patients’ socio-demographic, microbiological, and clinical data. SPSS 16 was used for data analysis. Results High degree of drug resistance (median 5 drugs, range 2–8 was observed. High proportion of patients was resistant to all five first-line anti-tuberculosis drugs (62.6%, and more than half were resistant to second line drugs (55.1%. The majority of the patients were ofloxacin resistant (52.7%. Upon multivariate analysis previous tuberculosis treatment at private (OR = 1.953, p = 0.034 and public private mix (OR = 2.824, p = 0.046 sectors were predictors of ofloxacin resistance. Conclusion The high degree of drug resistance observed, particularly to fluoroquinolones, is alarming. We recommend the adoption of more restrictive policies to control non-prescription sale of fluoroquinolones, its rational use by physicians, and training doctors in both private and public–private mix sectors to prevent further increase in fluoroquinolones resistant Mycobacterium tuberculosis strains.

  9. DDT-resistance and dieldrin-resistance in Anopheles quadrimaculatus*

    Science.gov (United States)

    Davidson, G.

    1963-01-01

    The nature and mode of inheritance of both DDT-resistance and dieldrin-resistance in Anopheles quadrimaculatus from the United States of America have been studied. Dieldrin-resistance is shown to be dependent on a single, semi-dominant, genetic factor, and DDT-resistance on a single, recessive one, though the expression of this latter factor is to some extent dependent on the genetic background. Both resistances can occur in the same mosquito but can be separated, thus indicating the independent nature of the two genetic factors involved. PMID:14056269

  10. Studying Resistance: Some Cautionary Notes

    Science.gov (United States)

    Dimitriadis, Greg

    2011-01-01

    The question of "resistance" has oriented the field of critical ethnography for several generations now. Indeed, the reproduction-resistance binary has animated much of the most important, critical work in educational studies over the last 30 years. Yet, this reproduction-resistance binary has perhaps calcified in recent years. Such work often…

  11. Studying Resistance: Some Cautionary Notes

    Science.gov (United States)

    Dimitriadis, Greg

    2011-01-01

    The question of "resistance" has oriented the field of critical ethnography for several generations now. Indeed, the reproduction-resistance binary has animated much of the most important, critical work in educational studies over the last 30 years. Yet, this reproduction-resistance binary has perhaps calcified in recent years. Such work…

  12. Driving Resistance from Railroad Trains

    DEFF Research Database (Denmark)

    Lindgreen, Erik Bjørn Grønning; Sorenson, Spencer C

    2005-01-01

    This report methods and parameters for calculating the driving resistance of railroad trains. Calculations and comparisons are presented for aerodynamic, rolling and total resistance for a variety of freight trains under different loading conditions, operating speed and configuration. Simplified...... methods are presented for the estimation of the driving resistance for passenger trains. This report is a supplement to the ARTEMIS rail emissions model....

  13. Testing Tools for Glyphosate Resistance

    Science.gov (United States)

    There are multiple tools available for testing for glyphosate resistance. Whole plant screens, whether in the field or greenhouse, should be used as an initial method to determine if a biotype is glyphosate resistant. Screening for resistance using seedling assays such as in Petri plates, sand cul...

  14. Chemical Countermeasures for Antibiotic Resistance

    Science.gov (United States)

    2014-04-01

    SUPPLEMENTARY NOTES 14.ABSTRACT New approaches are required to control multi-drug resistant (MDR) bacterial infections in military medical facilities ...New approaches are required to control multi-drug resistant (MDR) bacterial infections in military medical facilities , as injured Warfighters...current position: postdoc in the Disney lab TSRI Florida 15 CONCLUSION: New approaches are desperately required to control multi-drug resistant

  15. Biotechnology: herbicide-resistant crops

    Science.gov (United States)

    Transgenic, herbicide-resistant (HR) crops are planted on about 80% of the land covered by transgenic crops. More than 90% of HR crios are glyphosate-resistant (GR) crops, the others being resistant to glufosinate. The wide-scale adoption of HR crops, largely for economic reasons, has been the mos...

  16. Investigating the Antibiotic Resistance Problem.

    Science.gov (United States)

    Lawson, Michael; Lawson, Amy L.

    1998-01-01

    Seeks to give teachers useful information on the extent of the problem of antibiotic-resistant bacteria, mechanisms bacteria use to resist antibiotics, the causes of the emergence of antibiotic-resistant organisms, and practices that can prevent or reverse this trend. Contains 19 references. (DDR)

  17. Resistance To Accounting Changes

    OpenAIRE

    Tanış, Veyis Naci

    2013-01-01

    Changing manufacturing environments have affected cost and management accounting techniques employed by companies On the one hand manufacturing companies have changed their costing and decision making systems on the other they try to overcome the problems that occur as a result of employee resistance A survey has been conducted to investigate cost accounting changes on the largest 500 manufacturing companies in Turkey This work also attempts to shed light onto underlying reasons of why...

  18. Sleep disorders - resistant forms

    OpenAIRE

    Koláčková, Pavla

    2016-01-01

    Charles University in Prague, Faculty of Pharmacy in Hradec Králové Department of Biological and Medical Sciences Candidate: Pavla Koláčková Supervisor: Doc. RNDr. Vladimír Semecký, CSc. Name of dissertation: Sleep disorders - resistant forms The diploma thesis is about sleep disorders. Sleep disorders are a global problem, lots of people have these problems. This diploma thesis focuses on American International Classification of Sleep Disorders (ICSD) and its application in clinical practice...

  19. Multidrug-Resistant Tuberculosis

    Centers for Disease Control (CDC) Podcasts

    2008-10-28

    In this podcast, Dr. Oeltmann discusses multidrug-resistant tuberculosis. An outbreak occurred in Thailand, which led to 45 cases in the U.S. This serious illness can take up to 2 years to treat. MDR TB is a real threat and a serious condition.  Created: 10/28/2008 by Emerging Infectious Diseases.   Date Released: 10/28/2008.

  20. Insecticide Resistance Management

    Science.gov (United States)

    2013-01-01

    thuringiensis var. membranes israeknsis A2 Bacillus sphaencus Inhibitocs of chitin biosynthesis type 0 15 Benzaylureas Diflubenzuron, triflnmuron...resistance can detoxify or destroy the pesticide toxins at a faster rate, break down the toxins inside the body, and/or prevent the pesticide from entering...hocmone analogues MethOJre!le, hydorpene Juvenile hormone mimics 7 c Pyri proxyfen Pyriproxyfen Microbial disrupters of insect midgut 11 AI Bacillus

  1. Insulin and Insulin Resistance

    OpenAIRE

    Wilcox, Gisela

    2005-01-01

    As obesity and diabetes reach epidemic proportions in the developed world, the role of insulin resistance and its consequences are gaining prominence. Understanding the role of insulin in wide-ranging physiological processes and the influences on its synthesis and secretion, alongside its actions from the molecular to the whole body level, has significant implications for much chronic disease seen in Westernised populations today. This review provides an overview of insulin, its history, stru...

  2. Engineering disease resistant cattle.

    Science.gov (United States)

    Donovan, David M; Kerr, David E; Wall, Robert J

    2005-10-01

    Mastitis is a disease of the mammary gland caused by pathogens that find their way into the lumen of the gland through the teat canal. Mammary gland infections cost the US dairy industry approximately $2 billion dollars annually and have a similar impact in Europe. In the absence of effective treatments or breeding strategies to enhance mastitis resistance, we have created transgenic dairy cows that express lysostaphin in their mammary epithelium and secrete the antimicrobial peptide into milk. Staphylococcus aureus, a major mastitis pathogen, is exquisitely sensitive to lysostaphin. The transgenic cattle resist S. aureus mammary gland challenges, and their milk kills the bacteria, in a dose dependent manner. This first step in protecting cattle against mastitis will be followed by introduction of other genes to deal with potential resistance issues and other mastitis causing organisms. Care will be taken to avoid altering milk's nutritional and manufacturing properties. Multi-cistronic constructs may be required to achieve our goals as will other strategies possibly involving RNAi and gene targeting technology. This work demonstrates the possibility of using transgenic technology to address disease problems in agriculturally important species.

  3. Herbicide resistance screening assay.

    Science.gov (United States)

    Peterson, Joan M

    2009-01-01

    Herbicide resistance screening is a method that can be used not only to determine presence of the enzyme, phosphinothricin acetyltransferase, encoded by either the Bar or the Pat gene in transgenic maize, but also to assess the inheritance ratio of those genes in a segregating population. Herbicide screening can also be used to study linkage of a transgene of interest that was cotransformed with the herbicide resistance marker gene. By combining the herbicide screen assay with a PCR-based screen of leaf tissue DNA for the presence of both the Bar or the Pat gene marker and a cotransformed transgene of interest from the same seedling tissue and maintaining that seedling identity, the researcher can identify linkage or the possible breakdown in linkage of the marker gene and the transgene of interest. Further, the occurrence of "DNA silencing" can be evaluated if an individual seedling that was susceptible to the applied herbicide nonetheless gave PCR data that indicated presence of the gene responsible for herbicide resistance. Similarly, "DNA silencing" of the gene of interest may be investigated if the seeds can be screened and scored for that phenotypic trait in a nondestructive manner prior to planting.

  4. Resistant Hypertension and Chronotherapy

    Science.gov (United States)

    Prkacin, Ingrid; Balenovic, Diana; Djermanovic-Dobrota, Vesna; Lukac, Iva; Drazic, Petra; Pranjic, Iva-Klara

    2015-01-01

    Resistant hypertension is defined as blood pressure that remains above 140/90 mmHg in spite of the continuous use of three antihypertensive agents in optimal dose, including diuretic, and lifestyle changes. According to data from United States of America and Europe, the prevalence ranges from 10 up to 30% in patients with hypertension. Numerous biological and lifestyle factors can contribute to the development of resistant hypertension: medications, volume overload, obesity, diabetes mellitus, older age, renal parenchymal and renovascular disease, primary aldosteronism, obstructive sleep apnea, pheochormocytoma, Cushing’s syndrome, thyroid diseases, aortic coarctation. For diagnosing patient’s history is important, assessing compliance, regular blood pressure measurement, physical examination, biochemical evaluation and noninvasive imaging. The evaluation including 24h ambulatory monitoring of blood pressure (ABPM) in the identification of “non-dipper” hypertension. Non-dipper has particular importance and the prevalence of abnormally high sleep blood pressure is very often in chronic kidney patients. Therapeutic restoration of normal physiologic blood pressure reduction during night-time sleep (circadial variation) is the most significant independent predictor of decreased risk and the basis for the chronotherapy. The resistant hypertension treatment is achieved with nonpharmacological and pharmacological approach, treating secondary hypertension causes and invasive procedures. PMID:26005390

  5. Do Fish Resist?

    Directory of Open Access Journals (Sweden)

    Dinesh Joseph Wadiwel

    2016-03-01

    Full Text Available There have been a number of scientific studies on the question of whether fish feel pain. Some have suggested that some fish indeed do feel pain and that this has significant welfare implications (2003. Others have argued that fish do not have the brain development necessary to feel pain. In terms of number of animals killed, the slaughter of sea animals for human consumption significantly exceeds that of any land animals that we use for food, and sea animal slaughter practices frequently lack any basic welfare protections. If fish can be shown to feel pain—or more importantly, if humans can agree that fish feel pain—then this would place a significant question mark over many contemporary fishing practices.  This article substitutes the question 'Do Fish Feel Pain?' with an alternative: 'Do Fish Resist?' It explores the conceptual problems of understanding fish resistance, and the politics of epistemology that surrounds and seeks to develop a conceptual framework for understanding fish resistance to human capture by exploring the development of fishing technologies - the hook, the net and contemporary aquaculture.

  6. Breast Cancer Resistance Protein Expression and 5-Fluorouracil Resistance

    Institute of Scientific and Technical Information of China (English)

    JIAN-HUI YUAN; ZHI-XIONG ZHUANG; JIN-QUAN CHENG; LONG-YUAN JIANG; WEI-DONG JI; LIANG-FENG GUO; JIAN-JUN LIU; XING-YUN XU; JING-SONG HE; XIAN-MING WANG

    2008-01-01

    To filtrate breast cancer resistance protein (BCRP)-mediated resistant agents and to investigate clinical relationship between BCRP expression and drug resistance. Methods MTT assay was performed to filtrate BCRP-mediated resistant agents with BCRP expression cell model and to detect chemosensitivity of breast cancer tissue specimens to these agents. A high performance liquid chromatography (HPLC) assay was established, and was used to measure the relative dose of intracellular retention resistant agents. RT-PCR and immununohistochemistry (IHC) were employed to investigate the BCRP expression in breast cancer tissue specimens. Results MTT assay showed that the expression of BCRP increased with the increasing resistance of 5-fluorouracil (5-Fu) (P=0.8124, P<0.01). Condusion Resistance to 5-Fu can be mediated by BCRP. Clinical chemotherapy for breast cancer patients can be optimized based on BCRP-positive expression.

  7. Herbicide-resistant crops and weed resistance to herbicides.

    Science.gov (United States)

    Owen, Micheal D K; Zelaya, Ian A

    2005-03-01

    The adoption of genetically modified (GM) crops has increased dramatically during the last 3 years, and currently over 52 million hectares of GM crops are planted world-wide. Approximately 41 million hectares of GM crops planted are herbicide-resistant crops, which includes an estimated 33.3 million hectares of herbicide-resistant soybean. Herbicide-resistant maize, canola, cotton and soybean accounted for 77% of the GM crop hectares in 2001. However, sugarbeet, wheat, and as many as 14 other crops have transgenic herbicide-resistant cultivars that may be commercially available in the near future. There are many risks associated with the production of GM and herbicide-resistant crops, including problems with grain contamination, segregation and introgression of herbicide-resistant traits, marketplace acceptance and an increased reliance on herbicides for weed control. The latter issue is represented in the occurrence of weed population shifts, the evolution of herbicide-resistant weed populations and herbicide-resistant crops becoming volunteer weeds. Another issue is the ecological impact that simple weed management programs based on herbicide-resistant crops have on weed communities. Asiatic dayflower (Commelina cumminus L) common lambsquarters (Chenopodium album L) and wild buckwheat (Polygonum convolvulus L) are reported to be increasing in prominence in some agroecosystems due to the simple and significant selection pressure brought to bear by herbicide-resistant crops and the concomitant use of the herbicide. Finally, evolution of herbicide-resistant weed populations attributable to the herbicide-resistant crop/herbicide program has been observed. Examples of herbicide-resistant weeds include populations of horseweed (Conyza canadensis (L) Cronq) resistant to N-(phosphonomethyl)glycine (glyphosate). An important question is whether or not these problems represent significant economic issues for future agriculture. Copyright 2005 Society of Chemical Industry

  8. Heat-resistant thin film photoelectric converter with diffusion blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Takada, Jun; Yamaguchi, Minori; Tawada, Yoshihisa.

    1990-06-26

    The photoelectric converter of this invention comprises a semiconductor, an electrode, and a diffusion-blocking layer provided between the semiconductor and at least one electrode. An object of this invention is to provide a thin film photoelectric converter which has good heat resistance, in order to avoid the reduction in quality owing to the diffusion of metal or metallic compound from the electrode to the semiconductor layer, on the condition that the ohmic loss in the backing electrode and the reflection loss of light at the backing electrode are not increased. The component of the diffusion-blocking layer is selected from among such materials as metal silicides, silicide-forming metals, and metals from Groups IVA and VA of the periodic table. A preferable thickness of the diffusion-blocking layer is 5 to 500 angstroms. The semiconductor can be of the p-i-n, p-n, or Schottky type, and can be 0.02 to 100 {mu}m thick. For a semiconductor which comes into contact with the diffusion-blocking layer, n-type is preferable because it offers great improvements in the characteristics of the photoelectric converter. The electrode on the light-incident side is transparent and made of a metallic compound such as In{sub 2}O{sub 3}, SnO{sub 2}, Cd{sub x}SnO{sub y} (x=0.5 to 2, y=2 to 4) or the like. The backing electrode material is selected to have a suitable conductivity and reflectivity; such materials include Ag, Au, Al or Cu. The invention also discloses a method of preparing the thick film photoelectric converter, and examples are provided to illustrate the preparation of various embodiments of the invention. 2 figs., 1 tab.

  9. Molecular mechanisms of antibiotic resistance.

    Science.gov (United States)

    Blair, Jessica M A; Webber, Mark A; Baylay, Alison J; Ogbolu, David O; Piddock, Laura J V

    2015-01-01

    Antibiotic-resistant bacteria that are difficult or impossible to treat are becoming increasingly common and are causing a global health crisis. Antibiotic resistance is encoded by several genes, many of which can transfer between bacteria. New resistance mechanisms are constantly being described, and new genes and vectors of transmission are identified on a regular basis. This article reviews recent advances in our understanding of the mechanisms by which bacteria are either intrinsically resistant or acquire resistance to antibiotics, including the prevention of access to drug targets, changes in the structure and protection of antibiotic targets and the direct modification or inactivation of antibiotics.

  10. Nonlinear Resistivity for Magnetohydrodynamical Models

    CERN Document Server

    Lingam, Manasvi; Pfefferlé, David; Comisso, Luca; Bhattacharjee, Amitava

    2016-01-01

    A nonlinear current-dependent resistivity that accurately accounts for the collisional electron-ion momentum transfer rate is derived. It is shown that the Spitzer resistivity overestimates the resistivity in certain observationally relevant regimes. The nonlinear resistivity computed herein is a strictly decreasing function of the current, in contrast to some notable previous proposals. The relative importance of the new expression with respect to the well-established electron inertia and Hall terms is also examined. The subtle implications of this current-dependent resistivity are discussed in the context of plasma systems and phenomena such as magnetic reconnection.

  11. Antimicrobial resistance of thermophilic Campylobacter

    DEFF Research Database (Denmark)

    Aarestrup, Frank Møller; Engberg, J.

    2001-01-01

    Campylobacter has become the leading cause of zoonotic enteric infections in developed and developing countries world-wide. Antimicrobial resistance has emerged among Campylobacter mainly as a consequence of the use of antimicrobial agents in food animal production. Resistance to drugs of choice...... for the treatment of infections, macrolides and fluoroquinolones has emerged as a clinical problem and interventions to reduce this are recommended. Resistance to fluoroquinolones and macrolides is mediated by chromosomal mutations. Resistance to other relevant antimicrobial agents, mediated by acquired resistance...

  12. The Psychic Life of Resistance

    DEFF Research Database (Denmark)

    Barinaga, Ester

    2013-01-01

    to power. This article is a first step to remedy that oversight. Inspired by Butler’s reading of Foucault’s notion of power at work in subjection and resistance, the article uses Goffman to substantiate such an account. Based on a 20-month ethnographic study of a traditional immigrant suburb north......The last 20 years have seen a flood of studies of resistance, ranging from collective to individual acts of resistance, from the study of material aspects to its more ideational ones. Yet students of resistance have neglected the psychological dimension of everyday individual acts of resistance...... of Stockholm, Sweden, which is being redeveloped into a high-tech region, it offers empirical insight into the psychic life of resistance. Further, a particular resistance strategy is identified: symbolic dislocations through adherence to a boundary other than the one subjecting the self in the first place....

  13. Controlling antibiotic resistance in the ICU

    NARCIS (Netherlands)

    Derde, L.P.G.

    2013-01-01

    Patients admitted to intensive care units (ICUs) are frequently colonized with (antibiotic-resistant) bacteria, which may lead to healthcare associated infections. Antimicrobial-resistant bacteria (AMRB), such as methicillin-resistant Staphylococcus aureus (MRSA), vancomycin-resistant Enterococci (V

  14. Happy Festivus! Parody as playful consumer resistance

    DEFF Research Database (Denmark)

    Mikkonen, Ilona; Bajde, Domen

    2013-01-01

    Drawing upon literary theory, play and consumer resistance literature, we conceptualize consumer parodic resistance – a resistant form of play that critically refunctions dominant consumption discourses and marketplace ideologies. We explore parodic resistance empirically by analyzing Festivus...

  15. Treatment Resistant Hypertension.

    Science.gov (United States)

    Egan, Brent M

    2015-11-05

    Treatment resistant hypertension (TRH) is defined by office blood pressure (BP) uncontrolled on ≥ 3 or controlled on ≥ 4 antihypertensive medications, preferably at optimal doses and including a diuretic. Apparent (a)TRH is used when optimal therapy, adherence, and measurement artifacts are unknown. Among treated hypertensives, ~30% of uncontrolled and 10% of controlled individuals have aTRH, with a higher prevalence in Blacks than other race-ethnicity groups. In ≥ 50% of aTRH patients, BP measurement artifacts ('office' TRH), suboptimal regimens, or suboptimal adherence are present, ie, pseudo-resistance. While patients with 'office' TRH have fewer cardiovascular events than those with 'true' TRH, no evidence confirms that patients with suboptimal regimens or adherence are spared. Averaging several office BPs obtained with an automated monitor can reduce 'office' TRH. Home or ambulatory BP monitoring can identify office resistance. Prescribing ≥ 3 different antihypertensive medication classes, eg, thiazide-type diuretic, renin-angiotensin blocker and calcium antagonist at ≥ 50% of maximum recommended doses reasonably defines optimal therapy. Intensifying diuretic therapy, eg, adding an aldosterone antagonist, is effective for many TRH patients who are volume expanded. Clinical information, hemodynamic and renin-guided therapeutics can inform other treatment options. Attention to adverse effects, medication costs, and pill burden can improve adherence and control. Patients with aTRH and suspected secondary hypertension should be evaluated. Interfering substances or medications should be discontinued. These approaches will identify or correct the problem in ~80% of aTRH patients. Referral to a hypertension specialist and newer therapeutic approaches are options for TRH patients who cannot take or do not respond to optimal therapy.

  16. Corrosion-resistant uranium

    Science.gov (United States)

    Hovis, V.M. Jr.; Pullen, W.C.; Kollie, T.G.; Bell, R.T.

    1981-10-21

    The present invention is directed to the protecting of uranium and uranium alloy articles from corrosion by providing the surfaces of the articles with a layer of an ion-plated metal selected from aluminum and zinc to a thickness of at least 60 microinches and then converting at least the outer surface of the ion-plated layer of aluminum or zinc to aluminum chromate or zinc chromate. This conversion of the aluminum or zinc to the chromate form considerably enhances the corrosion resistance of the ion plating so as to effectively protect the coated article from corrosion.

  17. Measuring The Contact Resistances Of Photovoltaic Cells

    Science.gov (United States)

    Burger, D. R.

    1985-01-01

    Simple method devised to measure contact resistances of photovoltaic solar cells. Method uses readily available equipment and applicable at any time during life of cell. Enables evaluation of cell contact resistance, contact-end resistance, contact resistivity, sheet resistivity, and sheet resistivity under contact.

  18. Ceftobiprole- and ceftaroline-resistant methicillin-resistant Staphylococcus aureus.

    Science.gov (United States)

    Chan, Liana C; Basuino, Li; Diep, Binh; Hamilton, Stephanie; Chatterjee, Som S; Chambers, Henry F

    2015-05-01

    The role of mecA mutations in conferring resistance to ceftobiprole and ceftaroline, cephalosporins with anti-methicillin-resistant Staphylococcus aureus (MRSA) activity, was determined with MRSA strains COL and SF8300. The SF8300 ceftaroline-passaged mutant carried a single mecA mutation, E447K (E-to-K change at position 447), and expressed low-level resistance. This mutation in COL conferred high-level resistance to ceftobiprole but only low-level resistance to ceftaroline. The COL ceftaroline-passaged mutant, which expressed high-level resistance to ceftobiprole and ceftaroline, had mutations in pbp2, pbp4, and gdpP but not mecA.

  19. First resistance mechanisms characterization in glyphosate-resistant Leptochloa virgata.

    Directory of Open Access Journals (Sweden)

    Ricardo Alcántara-de la Cruz

    2016-11-01

    Full Text Available Leptochloa virgata (L. P. Beauv. is an annual weed common in citrus groves in the states of Puebla and Veracruz, Mexico limiting their production. Since 2010, several L. virgata populations were identified as being resistant to glyphosate, but studies of their resistance mechanisms developed by this species have been conducted. In this work, three glyphosate-resistant populations (R8, R14 and R15 collected in citrus orchards from Mexico, were used to study their resistance mechanisms comparing them to one susceptible population (S. Dose-response and shikimic acid accumulation assays confirmed the glyphosate resistance of the three resistant populations. Higher doses of up to 720 g ae ha-1 (field dose were needed to control by 50% plants of resistant populations. The S population absorbed between 7 and 13% more 14C-glyphosate than resistant ones, and translocated up to 32.2% of 14C-glyphosate to the roots at 96 h after treatment (HAT. The R8, R14 and R15 populations translocated only 24.5, 26.5 and 21.9%, respectively. The enzyme activity of 5-enolpyruvyl shikimate-3-phosphate synthase (EPSPS was not different in the S, R8 and R14 populations. The R15 Population exhibited 165.9 times greater EPSPS activity. Additionally, this population showed a higher EPSPS basal activity and a substitution in the codon 106 from Proline to Serine in the EPSPS protein sequence. EPSPS gene expression in the R15 population was similar to that of S population. In conclusion, the three resistant L. virgata populations show reduced absorption and translocation of 14C-glyphosate. Moreover, a mutation and an enhanced EPSPS basal activity at target-site level confers higher resistance to glyphosate. These results describe for the first time the glyphosate resistance mechanisms developed by resistant L. virgata populations of citrus orchards from Mexico.

  20. First Resistance Mechanisms Characterization in Glyphosate-Resistant Leptochloa virgata

    Science.gov (United States)

    Alcántara-de la Cruz, Ricardo; Rojano-Delgado, Antonia M.; Giménez, María J.; Cruz-Hipolito, Hugo E.; Domínguez-Valenzuela, José A.; Barro, Francisco; De Prado, Rafael

    2016-01-01

    Leptochloa virgata (L.) P. Beauv. is an annual weed common in citrus groves in the states of Puebla and Veracruz, Mexico limiting their production. Since 2010, several L. virgata populations were identified as being resistant to glyphosate, but studies of their resistance mechanisms developed by this species have been conducted. In this work, three glyphosate-resistant populations (R8, R14, and R15) collected in citrus orchards from Mexico, were used to study their resistance mechanisms comparing them to one susceptible population (S). Dose-response and shikimic acid accumulation assays confirmed the glyphosate resistance of the three resistant populations. Higher doses of up to 720 g ae ha-1 (field dose) were needed to control by 50% plants of resistant populations. The S population absorbed between 7 and 13% more 14C-glyphosate than resistant ones, and translocated up to 32.2% of 14C-glyphosate to the roots at 96 h after treatment (HAT). The R8, R14, and R15 populations translocated only 24.5, 26.5, and 21.9%, respectively. The enzyme activity of 5-enolpyruvyl shikimate-3-phosphate synthase (EPSPS) was not different in the S, R8 and R14 populations. The R15 Population exhibited 165.9 times greater EPSPS activity. Additionally, this population showed a higher EPSPS basal activity and a substitution in the codon 106 from Proline to Serine in the EPSPS protein sequence. EPSPS gene expression in the R15 population was similar to that of S population. In conclusion, the three resistant L. virgata populations show reduced absorption and translocation of 14C-glyphosate. Moreover, a mutation and an enhanced EPSPS basal activity at target-site level confers higher resistance to glyphosate. These results describe for the first time the glyphosate resistance mechanisms developed by resistant L. virgata populations of citrus orchards from Mexico. PMID:27917189