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Sample records for ohmic resistance

  1. Effect of composition on the polarization and ohmic resistances of ...

    Indian Academy of Sciences (India)

    2017-06-09

    Jun 9, 2017 ... Solid oxide fuel cell; composite cathodes; polarization resistance; ohmic resistance; ... of Oad on LSM, (iii) conversion of Oad into oxygen ion ... ions need to flow through the low temperature sintered ..... TPB's are present) suggest the formation of face-to-face con- ..... calculated using the following equation.

  2. Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

    International Nuclear Information System (INIS)

    He Ze-Zhao; Yang Ke-Wu; Yu Cui; Li Jia; Liu Qing-Bin; Lu Wei-Li; Feng Zhi-Hong; Cai Shu-Jun

    2015-01-01

    We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ω·mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance R c of bilayer graphene improves from an average of 0.24 ω·mm to 0.1 ω·mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. (paper)

  3. Method of separate determination of high-ohmic sample resistance and contact resistance

    Directory of Open Access Journals (Sweden)

    Vadim A. Golubiatnikov

    2015-09-01

    Full Text Available A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT, etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed.

  4. Comparative Study Between Internal Ohmic Resistance and Capacity for Battery State of Health Estimation

    Directory of Open Access Journals (Sweden)

    M. Nisvo Ramadan

    2015-12-01

    Full Text Available In order to avoid battery failure, a battery management system (BMS is necessary. Battery state of charge (SOC and state of health (SOH are part of information provided by a BMS. This research analyzes methods to estimate SOH based lithium polymer battery on change of its internal resistance and its capacity. Recursive least square (RLS algorithm was used to estimate internal ohmic resistance while coloumb counting was used to predict the change in the battery capacity. For the estimation algorithm, the battery terminal voltage and current are set as the input variables. Some tests including static capacity test, pulse test, pulse variation test and before charge-discharge test have been conducted to obtain the required data. After comparing the two methods, the obtained results show that SOH estimation based on coloumb counting provides better accuracy than SOH estimation based on internal ohmic resistance. However, the SOH estimation based on internal ohmic resistance is faster and more reliable for real application

  5. Methylation effect on the ohmic resistance of a poly-GC DNA-like chain

    Energy Technology Data Exchange (ETDEWEB)

    Moura, F.A.B.F. de, E-mail: fidelis@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Lyra, M.L. [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Almeida, M.L. de; Ourique, G.S.; Fulco, U.L.; Albuquerque, E.L. [Departamento de Biofísica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil)

    2016-10-14

    We determine, by using a tight-binding model Hamiltonian, the characteristic current–voltage (IxV) curves of a 5-methylated cytosine single strand poly-GC DNA-like finite segment, considering the methyl groups attached laterally to a random fraction of the cytosine basis. Striking, we found that the methylation significantly impacts the ohmic resistance (R) of the DNA-like segments, indicating that measurements of R can be used as a biosensor tool to probe the presence of anomalous methylation. - Highlights: • Ohmic resistance of finite segments of poly-CG DNA-like segments. • Possibility for the development of biosensor devices. • Methylation effect and electronic transport in DNA-like segments.

  6. Low resistance and transparent Ag/AZO ohmic contact to p-GaN

    International Nuclear Information System (INIS)

    Han, T.; Wang, T.; Gan, X. W.; Wu, H.; Shi, Y.; Liu, C.

    2014-01-01

    Silver (Ag)/ aluminum-doped zinc oxide (AZO) films were deposited on p-GaN by using electron beam evaporation. After the annealing process, current -voltage (I-V) measurements were carried out to determine the characteristic of the contacts. The Ag/AZO films annealed at 600 .deg. C were found to present an ohmic contact behavior. The specific contact resistance was calculated to be 9.76 x 10 -4 Ωcm 2 and the transmittance was over 80% for visibly light. The atomic force microscope was used to measure the aggregation of Ag grains which may have been the main factor in the formation of the Ag/AZO ohmic contact to p-GaN.

  7. Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires

    International Nuclear Information System (INIS)

    Blanchard, Paul; Bertness, Kris A; Harvey, Todd; Sanford, Norman

    2014-01-01

    Contact resistivity ρ c is an important figure of merit in evaluating and improving the performance of electronic and optoelectronic devices. Due to the small size, unique morphology, and uncertain transport properties of semiconductor nanowires (NWs), measuring ρ c of contacts to NWs can be particularly challenging. In this work, Si-doped n-GaN NWs were grown by molecular beam epitaxy. Four-contact structures with 20 nm Ti/200 nm Al contacts were fabricated on individual NWs by photolithography, and the contacts were annealed to achieve ohmic behavior. Two-point resistances R 23  and four-point collinear resistances R 23collinear  were measured between the middle two contacts on each NW. These resistances were then modeled by taking into account the non-uniform distribution of current flow along the length of each contact. Contrary to the assumption that the resistance difference R 23 −R 23collinear  is equal to the total contact resistance R c , the distributed-current-flow contact model shows that R 23 −R 23collinear  ≪ R c when ρ c is sufficiently small. Indeed, the measured R 23 −R 23collinear  was so small in these devices that it was within the measurement uncertainty, meaning that it was not possible to directly calculate ρ c from these data. However, it was possible to calculate an upper bound on ρ c for each device based on the largest possible value of R 23 −R 23collinear . In addition, we took into account the large uncertainties in the NW transport properties by numerically maximizing ρ c with respect to the uncertainty range of each measured and assumed parameter in the contact model. The resulting upper limits on ρ c ranged from 4.2 × 10 −6  to 7.6 × 10 −6  Ω cm 2 , indicating that 20 nm Ti/200 nm Al is a good choice of ohmic contact for moderately-doped n-GaN NWs. The measurement and numerical analysis demonstrated here offer a general approach to modeling ohmic contact resistivity via NW four

  8. Applicability of the lattice Boltzmann method to determine the ohmic resistance in equivalent resistor connections

    Science.gov (United States)

    Espinoza-Andaluz, Mayken; Barzola, Julio; Guarochico-Moreira, Víctor H.; Andersson, Martin

    2017-12-01

    Knowing the ohmic resistance in the materials allow to know in advance its electrical behavior when a potential difference is applied, and therefore the prediction of the electrical performance can be achieved in a most certain manner. Although the Lattice Boltzmann method (LBM) has been applied to solve several physical phenomena in complex geometries, it has only been used to describe the fluid phase, but applicability studies of LBM on the solid-electric-conducting material have not been carried out yet. The purpose of this paper is to demonstrate the accuracy of calculating the equivalent resistor connections using LBM. Several series and parallel resistor connections are effected. All the computations are carried out with 3D models, and the domain materials are designed by the authors.

  9. Transport mechanisms in low-resistance ohmic contacts to p-InP formed by rapid thermal annealing

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1993-01-01

    process is related to interdiffusion and compound formation between the metal elements and the InP. The onset of low specific contact resistance is characterized by a change in the dominant transport mechanism; from predominantly a combination of thermionic emission and field emission to purely thermionic......Thermionic emission across a very small effective Schottky barrier (0-0.2 eV) are reported as being the dominant transport process mechanism in very low-resistance ohmic contacts for conventional AuZn(Ni) metallization systems top-InP formed by rapid thermal annealing. The barrier modulation...

  10. The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices

    Science.gov (United States)

    Rezvanian, O.; Brown, C.; Zikry, M. A.; Kingon, A. I.; Krim, J.; Irving, D. L.; Brenner, D. W.

    2008-07-01

    It is shown that measured and calculated time-dependent electrical resistances of closed gold Ohmic switches in radio frequency microelectromechanical system (rf-MEMS) devices are well described by a power law that can be derived from a single asperity creep model. The analysis reveals that the exponent and prefactor in the power law arise, respectively, from the coefficient relating creep rate to applied stress and the initial surface roughness. The analysis also shows that resistance plateaus are not, in fact, limiting resistances but rather result from the small coefficient in the power law. The model predicts that it will take a longer time for the contact resistance to attain a power law relation with each successive closing of the switch due to asperity blunting. Analysis of the first few seconds of the measured resistance for three successive openings and closings of one of the MEMS devices supports this prediction. This work thus provides guidance toward the rational design of Ohmic contacts with enhanced reliabilities by better defining variables that can be controlled through material selection, interface processing, and switch operation.

  11. Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.k [Department of Display Materials Engineering, Kyung Hee University, 1 Seochoen-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Yi, Min-Su [Department of Materials Science and Engineering, Kyungpook National University, Sangju, Gyeongbuk, 742-711 (Korea, Republic of); Lee, Sung-Nam [Department of Engineering in Energy and Applied Chemistry, Silla University, Busan, 617-736 (Korea, Republic of)

    2009-05-29

    The electrical, structural, and optical characteristics of Ag/ZnO-doped In{sub 2}O{sub 3} (IZO) ohmic contacts to p-type GaN:Mg (2.5 x 10{sup 17} cm{sup -3}) were investigated. The Ag and IZO (10 nm/50 nm) layers were prepared by thermal evaporation and linear facing target sputtering, respectively. Although the as-deposited and 400 {sup o}C annealed samples showed rectifying behavior, the 500 and 600 {sup o}C annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact. The annealing of the contact at 600 {sup o}C for 3 min in a vacuum ({approx} 10{sup -3} Torr) resulted in the lowest specific contact resistivity of 1.8 x 10{sup -4} {Omega}.cm{sup 2} and high transparency of 78% at a wavelength of 470 nm. Using Auger electron spectroscopy, depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the electrical properties of the Ag/IZO contacts.

  12. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    International Nuclear Information System (INIS)

    Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-01-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  13. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    NARCIS (Netherlands)

    Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

    2014-01-01

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact

  14. On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

    2016-01-01

    The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  15. On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

    2016-08-15

    The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  16. Ohmic contacts to semiconducting diamond

    Science.gov (United States)

    Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

    1990-10-01

    Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

  17. Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

    KAUST Repository

    Gupta, Rahul P.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N.; Gnade, B. E.

    2010-01-01

    A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

  18. Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

    KAUST Repository

    Gupta, Rahul P.

    2010-04-27

    A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

  19. Ohmic Heating: Concept and Applications-A Review.

    Science.gov (United States)

    Kaur, Nimratbir; Singh, A K

    2016-10-25

    Ohmic heating, also known as Joule heating, electrical resistance heating, and direct electrical resistance heating, is a process of heating the food by passing electric current. In ohmic heating the energy is dissipated directly into the food. Electrical conductivity is a key parameter in the design of an effective ohmic heater. A large number of potential applications exist for ohmic heating, including blanching, evaporation, dehydration, fermentation, sterilization, pasteurization, and heating of foods. Beyond heating, applied electric field under ohmic heating causes electroporation of cell membranes, which increase extraction rates, and reduce gelatinization temperature and enthalpy. Ohmic heating results in faster heating of food along with maintenance of color and nutritional value of food. Water absorption index, water solubility index, thermal properties, and pasting properties are altered with the application of ohmic heating. Ohmic heating results in pre-gelatinized starches, which reduce energy requirement during processing. But its higher initial cost, lack of its applications in foods containing fats and oils, and less awareness limit its use.

  20. Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique

    Science.gov (United States)

    Liu, J.; Wang, J.; Wang, H.; Zhu, L.; Wu, W.

    2017-06-01

    Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω·mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

  1. Pentacene ohmic contact on the transparent conductive oxide films

    International Nuclear Information System (INIS)

    Chu, Jian-An; Zeng, Jian-Jhou; Wu, Kuo-Chen; Lin, Yow-Jon

    2010-01-01

    Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

  2. Study of Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

    Science.gov (United States)

    Shostachenko, S. A.; Porokhonko, Y. A.; Zakharchenko, R. V.; Burdykin, M. S.; Ryzhuk, R. V.; Kargin, N. I.; Kalinin, B. V.; Belov, A. A.; Vasiliev, A. N.

    2017-12-01

    This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10-6 Ω·cm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

  3. Mechanisms of current flow in metal-semiconductor ohmic contacts

    International Nuclear Information System (INIS)

    Blank, T. V.; Gol'dberg, Yu. A.

    2007-01-01

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

  4. Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n{sup +}-In{sub 0.53} Ga{sub 0.47}As

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck; Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Rinus T. P. [SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203 (United States)

    2014-10-28

    Successful application of the silicide-like Ni{sub x}InGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n{sup +}- In{sub 0.53}Ga{sub 0.47}As (N{sub D} = 3 × 10{sup 19 }cm{sup −3}) with a specific contact resistance (ρ{sub c}) of 4.0 × 10{sup −8 }± 7 × 10{sup −9} Ω·cm{sup 2} and 4.6 × 10{sup −8 }± 9 × 10{sup −9} Ω·cm{sup 2}, respectively, after annealing at 350 °C for 60 s. With an ammonium sulfide pre-metallization surface treatment, ρ{sub c} is further reduced to 2.1 × 10{sup −8 }± 2 × 10{sup −9} Ω·cm{sup 2} and 1.8 × 10{sup −8 }± 1 × 10{sup −9} Ω·cm{sup 2} on epilayers with and without 10 nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.

  5. Ohmic Heating System for the TFTR Tokamak

    International Nuclear Information System (INIS)

    Petree, F.; Cassel, R.

    1977-01-01

    The TFTR Ohmic Heating (OH) System will apply 140,000 volt impulses upon the OH coils to start the plasma. In order to reduce the voltage stress to ground on the OH coils to 12 kV without changing the magnetic field induced by the OH system in the plasma, six d-c current interrupters will be applied to six entry points in the OH coil system. And in order to impart a nearly rectangular shape to these impulses, the voltage determining elements will be nonlinear resistances placed in parallel with the interrupters. These nonlinear resistors, made of semiconducting material, are not normally used in repetitive or continuous duty, and their proper functioning is crucial to the reliable operation of the system. The system described herein, is being revised owing to the impact of revisions to the Toroidal Field Coil System, and to refinements to the OH System design

  6. Dual ohmic contact to N- and P-type silicon carbide

    Science.gov (United States)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  7. Empirical scaling for present ohmic heated tokamaks

    International Nuclear Information System (INIS)

    Daughney, C.

    1975-06-01

    Empirical scaling laws are given for the average electron temperature and electron energy confinement time as functions of plasma current, average electron density, effective ion charge, toroidal magnetic field, and major and minor plasma radius. The ohmic heating is classical, and the electron energy transport is anomalous. The present scaling indicates that ohmic-heating becomes ineffective with larger experiments. (U.S.)

  8. EPR ohmic heating energy storage

    International Nuclear Information System (INIS)

    Heck, F.M.; Stillwagon, R.E.; King, E.I.

    1977-01-01

    The Ohmic Heating (OH) Systems for all the Experimental Power Reactor (EPR) designs to date have all used temporary energy storage to assist in providing the OH current charge required to build up the plasma current. The energies involved (0.8 x 10 9 J to 1.9 x 10 9 J) are so large as to make capacitor storage impractical. Two alternative approaches are homopolar dc generators and ac generators. Either of these can be designed for pulse duty and can be made to function in a manner similar to a capacitor in the OH circuit and are therefore potential temporary energy storage devices for OH systems for large tokamaks. This study compared total OH system costs using homopolar and ac generators to determine their relative merits. The total system costs were not significantly different for either type of machine. The added flexibility and the lower maintenance of the ac machine system make it the more attractive approach

  9. Statistical analyses of local transport coefficients in Ohmic ASDEX discharges

    International Nuclear Information System (INIS)

    Simmet, E.; Stroth, U.; Wagner, F.; Fahrbach, H.U.; Herrmann, W.; Kardaun, O.J.W.F.; Mayer, H.M.

    1991-01-01

    Tokamak energy transport is still an unsolved problem. Many theoretical models have been developed, which try to explain the anomalous high energy-transport coefficients. Up to now these models have been applied to global plasma parameters. A comparison of transport coefficients with global confinement time is only conclusive if the transport is dominated by one process across the plasma diameter. This, however, is not the case in most Ohmic confinement regimes, where at least three different transport mechanisms play an important role. Sawtooth activity leads to an increase in energy transport in the plasma centre. In the intermediate region turbulent transport is expected. Candidates here are drift waves and resistive fluid turbulences. At the edge, ballooning modes or rippling modes could dominate the transport. For the intermediate region, one can deduce theoretical scaling laws for τ E from turbulent theories. Predicted scalings reproduce the experimentally found density dependence of τ E in the linear Ohmic confinement regime (LOC) and the saturated regime (SOC), but they do not show the correct dependence on the isotope mass. The relevance of these transport theories can only be tested in comparing them to experimental local transport coefficients. To this purpose we have performed transport calculations on more than a hundred Ohmic ASDEX discharges. By Principal Component Analysis we determine the dimensionless components which dominate the transport coefficients and we compare the results to the predictions of various theories. (author) 6 refs., 2 figs., 1 tab

  10. Non-ohmic transport behavior in ultra-thin gold films

    International Nuclear Information System (INIS)

    Alkhatib, A.; Souier, T.; Chiesa, M.

    2011-01-01

    Highlights: → C-AFM study on ultra-thin gold films. → Connection between ultra-thin film morphology and lateral electrical transport. → Transition between ohmic and non-ohmic behavior. → Electrical transition correlation to the film structure continuity. → Direct and indirect tunneling regimes related to discontinuous structures. - Abstract: Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive regions (10 10 -10 11 Ω), the density of which increases strongly at lower thickness. The high resistivity is shown to be directly related to discontinuities in the metal sheet. Local I-V curves are acquired to show the nature of electrical behavior relative to thickness. Results show that in Au films of higher thickness the electrical behavior is ohmic, while it is non-ohmic in highly discontinuous films of lower thickness, with the transition happening between 34 and 39 nm. The non-ohmic behavior is explained with tunneling occurring between separated Au islands. The results explain the abrupt increase of electrical resistivity at lower thin film thicknesses.

  11. Super high field ohmically heated tokamak operation

    International Nuclear Information System (INIS)

    Cohn, D.R.; Bromberg, L.; Leclaire, R.J.; Potok, R.E.; Jassby, D.L.

    1986-01-01

    The authors discuss a super high field mode of tokamak operation that uses ohmic heating or near ohmic heating to ignition. The super high field mode of operation uses very high values of Β/sup 2/α, where Β is the magnetic field and a is the minor radius (Β/sup 2/α > 100 T/sup 2/m). We analyze copper magnet devices with major radii from 1.7 to 3.0 meters. Minimizing or eliminating the need for auxiliary heating has the potential advantages of reducing uncertainty in extrapolating the energy confinement time of current tokamak devices, and reducing engineering problems associated with large auxiliary heating requirements. It may be possible to heat relatively short pulse, inertially cooled tokamaks to ignition with ohmic power alone. However, there may be advantages in using a very small amount of auxiliary power (less than the ohmic heating power) to boost the ohmic heating and provide a faster start-up, expecially in relatively compact devices

  12. Nutritional impact of ohmic heating on fruits and vegetables—A review

    Directory of Open Access Journals (Sweden)

    Ranvir Kaur

    2016-12-01

    Full Text Available Ohmic heating, also called electrical resistance heating, joule heating, or electro-conductive heating, is an advanced thermal food processing technique where heat is internally generated in a sample due to electrical resistance when electric current is passed through it. It is a novel technique which provides rapid and uniform heating, resulting in less thermal damage to the food product. According to the recent literature, plant products are most suitable and often used for ohmic heat processing. Beyond heating of fruits and vegetables, the applied electric field under ohmic heating causes various changes in quality and nutritional parameters which include inactivation of enzymes and micro-organisms, degradation of heat-sensitive compounds, changes in cell membranes, viscosity, pH, color, and rheology. Ohmic heating rate depends on the electrical field strength and electrical conductivity of product. This review focuses on various factors affecting the electrical conductivity of fruits and vegetables and the effect of ohmic heating on their quality and nutritional properties.

  13. Neoclassical MHD equilibria with ohmic current

    International Nuclear Information System (INIS)

    Tokuda, Shinji; Takeda, Tatsuoki; Okamoto, Masao.

    1989-01-01

    MHD equilibria of tokamak plasmas with neoclassical current effects (neoclassical conductivity and bootstrap current) were calculated self-consistently. Neoclassical effects on JFT-2M tokamak plasmas, sustained by ohmic currents, were studied. Bootstrap currents flow little for L-mode type equilibria because of low attainable values of poloidal beta, β J . H-mode type equilibria give bootstrap currents of 30% ohmic currents for β J attained by JFT-2M and 100% for β J ≥ 1.5, both of which are sufficient to change the current profiles and the resultant MHD equilibria. Neoclassical conductivity which has roughly half value of the classical Spitzer conductivity brings peaked ohmic current profiles to yield low safety factor at the magnetic axis. Neoclassical conductivity reduces the value of effective Z(Z eff ) which is necessary to give the observed one-turn voltage but it needs impurities accumulating at the center when such peaked current profiles are not observed. (author)

  14. Characterization of recessed Ohmic contacts to AlGaN/GaN

    NARCIS (Netherlands)

    Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

    2015-01-01

    In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to

  15. Energy Confinement of both Ohmic and LHW Plasma on EAST

    International Nuclear Information System (INIS)

    Yang Yao; Gao Xiang

    2011-01-01

    Study on the characters of energy confinement in both Ohmic and lower hybrid wave (LHW) discharges on EAST is conducted and the linear Ohmic confinement (LOC), saturated ohmic confinement (SOC) and improved Ohmic confinement (IOC) regimes are investigated in this paper. It is observed that an improved confinement mode characterized by both a drop of D α line intensity and an increase in line average density can be triggered by a gas puffing pulse. (magnetically confined plasma)

  16. Dynamical determination of ohmic states of a cylindrical pinch

    International Nuclear Information System (INIS)

    Schnack, D.D.

    1980-04-01

    The dual problems of generation and sustainment of the reversed axial field are studied. It is shown that, if a cylindrical plasma is initially in an axisymmetric state with a sufficient degree of paramagnetism, field reversal can be attained by mode activity of a single helicity. The initial paramagnetism may be due to the method of pinch formation, as in fast experiments, or to a gradual altering of the pitch profile resulting from a succession of instabilities. Furthermore, if the total current is kept constant and energy loss and resistivity profiles are included in an ad hoc manner, one finds that the final steady state of the helical instability can be maintained for long times against resistive diffusion without the need for further unstable activity. These states, which possess zero order flow and possibly reversed axial field, represent steady equilibria which simultaneously satisfy force balance and Ohm's law, and are termed Ohmic states

  17. Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

    NARCIS (Netherlands)

    Jacobs, B.; Krämer, M.C.J.C.M.; Geluk, E.J.; Karouta, F.

    2002-01-01

    We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm

  18. Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

    Science.gov (United States)

    Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

    2017-08-23

    We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

  19. Energy balance in the ohmically heated FT

    International Nuclear Information System (INIS)

    Bartiromo, R.; Brusati, M.; Cilloco, F.

    1981-01-01

    A typical discharge in the FT Tokamak at 60 kG has been studied in detail in order to derive the power balance between the ohmic input and the plasma losses. Impurity and radiation losses together with ion and electron energy balance are discussed. A power transport term for electrons is derived which is ascribed to anomalous thermal conduction. This resulting thermal transport is compared with those derived from different proposed scalings

  20. Ohmic ITBs in Alcator C-Mod

    Science.gov (United States)

    Fiore, C. L.; Rowan, W. L.; Dominguez, A.; Hubbard, A. E.; Ince-Cushman, A.; Greenwald, M. J.; Lin, L.; Marmar, E. S.; Reinke, M.; Rice, J. E.; Zhurovich, K.

    2007-11-01

    Internal transport barrier plasmas can arise spontaneously in ohmic Alcator C-Mod plasmas where an EDA H-mode has been developed by magnetic field ramping. These ohmic ITBs share the hallmarks of ITBs created with off-axis ICRF injection in that they have highly peaked density and pressure profiles and the peaking can be suppressed by on-axis ICRF. There is a reduction of particle and thermal flux in the barrier region which then allows the neoclassical pinch to peak the central density. Recent work on ITB onset conditions [1] which was motivated by turbulence studies [2] points to the broadening of the Ti profile with off-axis ICRF acting to reduce the ion temperature gradient. This suppresses ITG instability driven particle fluxes, which is thought to be the primary mechanism for ITB formation. The object of this study is to examine the characteristics of ohmic ITBs to find whether the stability of plasmas and the plasma parameters support the onset model. [1]K. Zhurovich, et al., To be published in Nuclear Fusion [2] D. R. Ernst, et al., Phys. Plasmas 11, 2637 (2004)

  1. Ohmic Heating Assisted Lye Peeling of Pears.

    Science.gov (United States)

    Gupta, Sarvesh; Sastry, Sudhir K

    2018-05-01

    Currently, high concentrations (15% to 18%) of lye (sodium hydroxide) are used in peeling pears, constituting a wastewater handling and disposal problem for fruit processors. In this study, the effect of ohmic heating on lye peeling of pears was investigated. Pears were peeled using 0.5%, 1%, 2%, and 3% NaOH under different electric field strengths at two run times and their peeled yields were compared to that obtained at 2% and 18% NaOH with conventional heating. Results revealed that ohmic heating results in greater than 95% peeled yields and the best peel quality at much lower concentrations of lye (2% NaOH at 532 V/m and 3% NaOH at 426 and 479 V/m) than those obtained under conventional heating conditions. Treatment times of 30 and 60 s showed no significant differences. Within the studied range, the effects of increasing field strength yielded no significant additional benefits. These results confirm that the concentration of lye can be significantly lowered in the presence of ohmic heating to achieve high peeled yields and quality. Our work shows that lye concentrations can be greatly reduced while peeling pears, resulting in significant savings in use of caustic chemicals, reduced costs for effluent treatment and waste disposal. © 2018 Institute of Food Technologists®.

  2. Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

    International Nuclear Information System (INIS)

    Lotkhov, Sergey V

    2013-01-01

    In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage–current characteristics were measured at temperatures down to T ∼ 20 mK for films with sheet resistivities as high as ∼7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current. (paper)

  3. Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Liang Song

    2018-03-01

    Full Text Available In this paper, we have studied the performance of Ti/Al/Ni/Au ohmic contact with different Al and Au thicknesses and pretreatments. The temperature dependence of contact resistances (Rc was investigated and it shows that there are different optimal annealing temperatures with different metal thicknesses and pretreatments. The optimal annealing temperature is affected by Al and Au thickness and AlGaN thickness. The etched AlGaN barrier is useful to achieve good ohmic contact (0.24 Ω·mm with a low annealing temperature. Only the contact resistances of the samples with 130 nm Al layer kept stable and the contact resistances of the samples with 100nm and 160 nm Al layers increased with the measurement temperatures. The contact resistances showed a similar increase and then keep stable trend for all the samples in the long-term 400 °C aging process. The ohmic metal of 20/130/50/50 nm Ti/Al/Ni/Au with ICP etching is the superior candidate considering the contact resistance and reliability.

  4. Silver antimony Ohmic contacts to moderately doped n-type germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dumas, D. C. S.; Gallacher, K.; Millar, R.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); MacLaren, I. [SUPA School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Myronov, M.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2014-04-21

    A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

  5. TNS superconducting ohmic-heating system

    International Nuclear Information System (INIS)

    Wang, S.T.; Fuja, R.; Kim, S.H.; Kustom, R.L.; Praeg, W.F.; Thompson, K.; Turner, L.R.

    1978-01-01

    The superconducting ohmic-heating (OH) system is the selected design for the General Atomics Co./Argonne National Laboratory TNS tokamak design studies. The key features of the OH system design are: (1) parallel coil connection, (2) better utilization of flux core by embedding support cylinder of the toroidal-field coil within the OH inner radius, (3) independent trim coils for correcting the stray fields, (4) low-loss high-current cryostable cable design and (5) OH coil cycling circuit using a reversing bridge. Detailed designs are presented

  6. Structural analysis of equilibrium and ohmic heating coil assemblies for the TFTR

    International Nuclear Information System (INIS)

    Chattopadhyay, S.

    1975-10-01

    The structural adequacy of the equilibrium and ohmic heating coils and their support systems for the TFTR device has been investigated. The capability of the coils to span ribs of the support structure has been established. The support structure has been found to be effective in resisting the magnetic forces in the coils. The bands encircling the outboard coils and the band tensioning devices have been found to perform adequately. The analysis is based on October 1975 conceptual design

  7. A new method of making ohmic contacts to p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Gutierrez, C.A., E-mail: chernandez@fis.cinvestav.mx [DNyN, Cinvestav-IPN, México, DF, 07360 (Mexico); Kudriavtsev, Yu. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Mota, Esteban [ESIME, Instituto Politécnico Nacional, México, DF, 07738 (Mexico); Hernández, A.G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Casallas-Moreno, Y.L.; López-López, M. [Departamento Física, Cinvestav-IPN, México, DF, 07360 (Mexico)

    2016-12-01

    Highlights: • Low resistance Ohmic contacts preparation is based on low energy high dose In{sup +} ion implantation into Metal/p-GaN to achieve a thin layer of In{sub x}Ga{sub 1-x}N just at the interface. • The specific ohmic contact was reduced from 10{sup −2} Ωcm{sup 2} to 2.5 × 10{sup −4} Ωcm{sup 2}. - Abstract: The structural, chemical, and electrical characteristics of In{sup +} ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In{sup +} ions with an implantation dose of 5 × 10{sup 15} ions/cm{sup 2} at room temperature to form a thin layer of In{sub x}Ga{sub 1-x}N located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In{sup +} implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10{sup −4} Ωcm{sup 2} was achieved for Au/Ni/p-In{sub x}Ga{sub 1-x}N/p-GaN ohmic contacts.

  8. Theoretical scaling law for ohmically heated tokamaks

    International Nuclear Information System (INIS)

    Minardi, E.

    1981-06-01

    The electrostatic drift instability arising from the reduction of shear damping, due to toroidal effects, is assumed to be the basic source of the anomalous electron transport in tokamaks. The Maxwellian population of electrons constitutes a medium whose adiabatic nonlinear reaction to the instability (described in terms of an effective dielectric constant of the medium) determines the stationary electrostatic fluctuation level in marginally unstable situations. The existence of a random electrostatic potenial implies a fluctuating current of the Maxwellian electrons which creates a random magnetic field and a stocasticization of a magnetic configuration. The application of recent results allows the calculation of the realted radial electron transport. It is found that the confinement time under stationary ohmic conditions scales as n Tsub(i)sup( - 1/2) and is proportional roughly to the cube of the geometric dimenisions. Moreover, it is deduced that the loop voltage is approximateley the same for all tokamaks, irrespective of temperature and density and to a large extent, also of geometrical conditions. Thes results are characteristic of the ohmic stationary regime and can hardly be extrapolated to order heating regimes. (orig.)

  9. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    Science.gov (United States)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  10. Study of degradation processes kinetics in ohmic contacts of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures under influence of temperature

    Science.gov (United States)

    Makeev, M. O.; Meshkov, S. A.

    2017-07-01

    The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

  11. Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

    Science.gov (United States)

    Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

    2017-02-09

    Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

  12. Period doubling in a model of magnetoconvection with Ohmic heating

    International Nuclear Information System (INIS)

    Osman, M. B. H.

    2000-01-01

    In this work it has been studied an idealized model of rotating nonlinear magneto convection to investigate the effects of Ohmic heating. In the over stable region it was found that Ohmic heating can lead to a period-doubling sequence

  13. Simulation of core turbulence measurement in Tore Supra ohmic regimes

    NARCIS (Netherlands)

    Hacquin, S.; Citrin, J.; Arnichand, H.; Sabot, R.; Bourdelle, C.; Garbet, X.; Kramer-Flecken, A.; Tore Supra team,

    2016-01-01

    This paper reports on a simulation of reflectometry measurement in Tore Supra ohmic discharges, for which the experimental observations as well as gyrokinetic non-linear computations predict a modification of turbulence spectrum between the linear (LOC) and the saturated ohmic confinement (SOC)

  14. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

    Science.gov (United States)

    Wang, Cong; Kim, Nam-Young

    2012-02-07

    Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

  15. Ignited tokamak devices with ohmic-heating dominated startup

    International Nuclear Information System (INIS)

    Cohn, D.R.; Bromberg, L.; Jassby, D.L.

    1986-01-01

    Startup of tokamaks such that the auxiliary heating power is significantly less than the ohmic heating power at all times during heating to ignition can be referred to as ''Ohmic-heating dominated startup.'' Operation in this mode could increase the certainty of heating to ignition since energy confinement during startup may be described by present scaling laws for ohmic heating. It could also reduce substantially the auxiliary heating power (the required power may be quite large for auxiliary-heating dominated startup). These advantages might be realized without the potentially demanding requirements for pure ohmic heating to ignition. In this paper the authors discuss the requirements for ohmic-heating dominated startup and present illustrative design parameters for compact experiment ignition devices that use high performance copper magnets

  16. Empirical scaling for present Ohmically heated tokamaks

    International Nuclear Information System (INIS)

    Daughney, C.

    1975-01-01

    Experimental results from the Adiabatic Toroidal Compressor (ATC) tokamak are used to obtain empirical scaling laws for the average electron temperature and electron energy confinement time as functions of the average electron density, the effective ion charge, and the plasma current. These scaling laws are extended to include dependence upon minor and major plasma radius and toroidal field strength through a comparison of the various tokamaks described in the literature. Electron thermal conductivity is the dominant loss process for the ATC tokamak. The parametric dependences of the observed electron thermal conductivity are not explained by present theoretical considerations. The electron temperature obtained with Ohmic heating is shown to be a function of current density - which will not be increased in the next generation of large tokamaks. However, the temperature dependence of the electron energy confinement time suggests that significant improvement in confinement time will be obtained with supplementary electron heating. (author)

  17. Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss

    International Nuclear Information System (INIS)

    Kim, Sun-Hong; Kim, Sung-Soo

    2010-01-01

    For the aim of wide-band noise absorbers with a special design for low frequency performance, this study proposes conductive indium-tin oxide (ITO) thin films as the absorbent materials in microstrip line. ITO thin films were deposited on the polyimide film substrates by rf magnetron cosputtering of In 2 O 3 and Sn targets. The deposited ITO films show a typical value of electrical resistivity (∼10 -4 Ω m) and sheet resistance can be controlled in the range of 20-230 Ω by variation in film thickness. Microstrip line with characteristic impedance of 50 Ω was used for determining their noise absorbing properties. It is found that there is an optimum sheet resistance of ITO films for the maximum power absorption. Reflection parameter (S 11 ) is increased with decrease in sheet resistance due to impedance mismatch. On the while, transmission parameter (S 21 ) is decreased with decrease in sheet resistance due to larger Ohmic loss of the ITO films. Experimental results and computational prediction show that the optimum sheet resistance is about 100 Ω. For this film, greater power absorption is predicted in the lower frequency region than ferrite thin films of high magnetic loss, which indicates that Ohmic loss is the predominant loss parameter for power absorption in the low frequency range.

  18. Metallization systems for stable ohmic contacts to GaAs

    International Nuclear Information System (INIS)

    Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

    1986-01-01

    A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

  19. Ohmic metallization technology for wide band-gap semiconductors

    International Nuclear Information System (INIS)

    Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

    2002-01-01

    Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

  20. Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Ao, Jin-Ping; Zhu, Huichao

    2016-01-01

    An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl 4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10 −9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs. (paper)

  1. Achieving improved ohmic confinement via impurity injection

    International Nuclear Information System (INIS)

    Bessenrodt-Weberpals, M.; Soeldner, F.X.

    1991-01-01

    Improved Ohmic Confinement (IOC) was obtained in ASDEX after a modification of the divertors that allowed a larger (deuterium and impurity) backflow from the divertor chamber. The quality of IOC depended crucially on the wall conditions, i.e. IOC was best for uncovered stainless steels walls and vanished with boronization. Furthermore, IOC was found only in deuterium discharges. These circumstances led to the idea that IOC correlates with the content of light impurities in the plasma. To substantiate this working hypothesis, we present observations in deuterium discharges with boronized wall conditions into which various impurities have been injected with the aim to induce IOC conditions. Firstly, the plasma behaviour in typical IOC discharges is characterized. Secondly, injection experiments with the low-Z impurities nitrogen and neon as well as with the high-Z impurities argon and krypton are discussed. Then, we concentrate on optimized neon puffing that yields the best confinement results which are similar to IOC conditions. Finally, these results are compared with eperiments in other tokamaks and some conclusions are drawn about the effects of the impurity puffing on both, the central and the edge plasma behaviour. (orig.)

  2. Spectroscopic study of ohmically heated Tokamak discharges

    International Nuclear Information System (INIS)

    Breton, C.; Michelis, C. de; Mattioli, M.

    1980-07-01

    Tokamak discharges interact strongly with the wall and/or the current aperture limiter producing recycling particles, which penetrate into the discharge and which can be studied spectroscopically. Working gas (hydrogen or deuterium) is usually studied observing visible Balmer lines at several toroidal locations. Absolute measurements allow to obtain both the recycling flux and the global particle confinement time. With sufficiently high resolution the isotopic plasma composition can be obtained. The impurity elements can be divided into desorbed elements (mainly oxygen) and eroded elements (metals from both walls and limiter) according to the plasma-wall interaction processes originating them. Space-and time-resolved emission in the VUV region down to about 20 A will be reviewed for ohmically-heated discharges. The time evolution can be divided into four phases, not always clearly separated in a particular discharge: a) the initial phase, lasting less than 10 ms (the so-called burn-out phase), b) the period of increasing plasma current and electron temperature, lasting typically 10 - 100 ms, c) an eventual steady state (plateau of the plasma current with almost constant density and temperature), d) the increase of the electron density up to or just below the maximum value attainable in a given device. For all these phases the results reported from different devices will be described and compared

  3. Technology, applications and modelling of ohmic heating: a review.

    Science.gov (United States)

    Varghese, K Shiby; Pandey, M C; Radhakrishna, K; Bawa, A S

    2014-10-01

    Ohmic heating or Joule heating has immense potential for achieving rapid and uniform heating in foods, providing microbiologically safe and high quality foods. This review discusses the technology behind ohmic heating, the current applications and thermal modeling of the process. The success of ohmic heating depends on the rate of heat generation in the system, the electrical conductivity of the food, electrical field strength, residence time and the method by which the food flows through the system. Ohmic heating is appropriate for processing of particulate and protein rich foods. A vast amount of work is still necessary to understand food properties in order to refine system design and maximize performance of this technology in the field of packaged foods and space food product development. Various economic studies will also play an important role in understanding the overall cost and viability of commercial application of this technology in food processing. Some of the demerits of the technology are also discussed.

  4. Ohmic Contacts to P-Type SiC

    National Research Council Canada - National Science Library

    Crofton, John

    2000-01-01

    Alloys of aluminum (Al) have previously been used as ohmic contacts to p-type SiC, however the characteristics and performance of these contacts is drastically affected by the type and composition of the Al alloy...

  5. Developing and modelling of ohmic heating for solid food products

    DEFF Research Database (Denmark)

    Feyissa, Aberham Hailu; Frosch, Stina

    Heating of solid foods using the conventional technologies is time-consuming due to the fact that heat transfer is limited by internal conduction within the product. This is a big challenge to food manufactures who wish to heat the product faster to the desired core temperature and to ensure more...... uniform quality across the product. Ohmic heating is one of the novel technologies potentially solving this problem by allowing volumetric heating of the product and thereby reducing or eliminating temperature gradients within the product. However, the application of ohmic heating for solid food products...... such as meat and seafood is not industrially utilized yet. Therefore, the aim of the current work is to model and develop the ohmic heating technology for heating of solid meat and seafood. A 3D mathematical model of coupled heat transfer and electric field during ohmic heating of meat products has been...

  6. Analytical models of Ohmic heating and conventional heating in food processing

    Science.gov (United States)

    Serventi, A.; Bozzoli, F.; Rainieri, S.

    2017-11-01

    Ohmic heating is a food processing operation in which an electric current is passed through a food and the electrical resistance of the food causes the electric power to be transformed directly into heat. The heat is not delivered through a surface as in conventional heat exchangers but it is internally generated by Joule effect. Therefore, no temperature gradient is required and it origins quicker and more uniform heating within the food. On the other hand, it is associated with high energy costs and its use is limited to a particular range of food products with an appropriate electrical conductivity. Sterilization of foods by Ohmic heating has gained growing interest in the last few years. The aim of this study is to evaluate the benefits of Ohmic heating with respect to conventional heat exchangers under uniform wall temperature, a condition that is often present in industrial plants. This comparison is carried out by means of analytical models. The two different heating conditions are simulated under typical circumstances for the food industry. Particular attention is paid to the uniformity of the heat treatment and to the heating section length required in the two different conditions.

  7. 1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

    International Nuclear Information System (INIS)

    Warren, C.E.; Wagner, B.F.; Anderson, W.A.

    1986-01-01

    The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

  8. Energy confinement comparison of ohmically heated stellarators to tokamaks

    International Nuclear Information System (INIS)

    Chu, T.K.; Lee, Y.C.

    1979-12-01

    An empirical scaling prescribes that the energy confinement time in ohmically heated stellarators and tokamaks is proportional to the internal energy of the plasma and the minor radius, and inversely proportional to the current density. A thermal-conduction energy transport model, based on a heuristic assumption that the effective momentum transfer in the radial direction is proportional to the classical parallel momentum transfer which results in ohmic heating, is used to explain this scaling

  9. Three-dimensional stellarator equilibrium as an ohmic steady state

    International Nuclear Information System (INIS)

    Park, W.; Monticello, D.A.; Strauss, H.; Manickam, J.

    1985-07-01

    A stable three-dimensional stellarator equilibrium can be obtained numerically by a time-dependent relaxation method using small values of dissipation. The final state is an ohmic steady state which approaches an ohmic equilibrium in the limit of small dissipation coefficients. We describe a method to speed up the relaxation process and a method to implement the B vector . del p = 0 condition. These methods are applied to obtain three-dimensional heliac equilibria using the reduced heliac equations

  10. Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hailong; Shen, Huajun, E-mail: shenhuajun@ime.ac.cn; Tang, Yidan; Bai, Yun; Liu, Xinyu [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xufang [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wu, Yudong; Liu, Kean [Zhuzhou CSR Times Electric Co., Ltd, ZhuZhou 412001 (China)

    2015-01-14

    Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities were also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC contacts degraded in different degrees, and the contact morphology deteriorated with the increases of the average surface roughness and interface voids. X-ray spectra showed that Ni{sub 2}Si and Ti{sub 3}SiC{sub 2}, which were formed during ohmic contact annealing and contributed to low contact resistivity, were stable under high temperature storage. The existence of the TiAl{sub 3} and NiAl{sub 3} intermetallic phases was helpful to prevent Al agglomeration on the interface and make the contacts thermally stable. Auger electron spectroscopy indicated that the incorporation of oxygen at the surface and interface led to the oxidation of Al or Ti resulting in increased contact resistance. Also, the formation of these oxides roughened the surface and interface. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism dominates the current transport for contacts before and after the thermal treatment. It suggests that the Ni/Ti/Al composite ohmic contacts are promising for SiC devices to be used in high temperature applications.

  11. Effect of the ohmic drop in a RPC-LIKE chamber for measurements of electron transport parameters

    Energy Technology Data Exchange (ETDEWEB)

    Petri, Anna R.; Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: annapetri@usp.br, E-mail: josemary@ipen.br, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil); Mangiarotti, Alessio, E-mail: alessio@if.usp.br [Universidade de São Paulo (IF/USP), SP (Brazil). Instituto de Física

    2017-07-01

    The main advantage of Resistive Plate Chambers (RPCs), applied, for instance, in High-Energy Experiments and Positron Emission Tomography (PET), is that it is spark-protected due to the presence of, at least, one high resistive electrode. However, the ohmic drop across the latter can affect the charge multiplication significantly. In this work, we investigate this effect in a RPC-like chamber. The counter was filled with nitrogen at atmospheric pressure and the primary ionization was produced by the incidence of nitrogen pulsed laser beam on an aluminum cathode. The illumination area of the cathode was measured using a foil of millimetric paper overlaid on this electrode. In this way, the resistance of the glass anode could be estimated using the known resistivity of the glass (ρ=2×10{sup 12} Ω.cm). Therefore, the voltage drop across the dielectric was calculated by the product of the current across the gas gap and the anode resistance. In order to mitigate the effect of the resistive electrode, the laser beam intensity was limited by interposing metallic meshes between the laser and the chamber window. The dependence of the ohmic drop from the applied voltage was analyzed. The results obtained shown that, without the meshes, the ohmic drop corresponds up to 7% of the applied voltage, preventing the detection system to reach values of density-normalized electric fields in the gas gap (E{sub eff}/N) higher than 166 Td. By minimizing the laser beam intensity and, consequently, the primary ionization, the ohmic drop represented only 0.2% of the applied voltage, extending the E{sub eff} /N range up to 175 Td. (author)

  12. Transport simulations of ohmic ignition experiment: IGNITEX

    International Nuclear Information System (INIS)

    Uckan, N.A.; Howe, H.C.

    1987-01-01

    The IGNITEX device, proposed by Rosenbluth et al., is a compact, super-high-field, high-current, copper-coil tokamak envisioned to reach ignition with ohmic (OH) heating alone. Several simulations of IGNITEX were made with a 0-D global model and with the 1-D PROCTR transport code. It is shown that OH ignition is a sensitive function of the assumptions about density profile, wall reflectivity of synchrotron radiation, impurity radiation, plasma edge conditions, and additional anomalous losses. In IGNITEX, OH ignition is accessible with nearly all scalings based on favorable OH confinement (such as neo-Alcator). Also, OH ignition appears to be accessible for most (not all) L-mode scalings (such as Kaye-Goldston), provided that the density profile is not too broad (parabolic or more peaked profiles are needed), Z/sub eff/ is not too large (≤2), and anomalous radiation and alpha losses and/or other enhanced transport losses (/eta//sub i/ modes, edge convective energy losses, etc.) are not present. In IGNITEX, because the figure-of-merit parameters (aB 0 2 /q* /approximately/ IB 0 , etc.) are large, ignition can be accessed (either with OH heating alone or with the aid of a small amount of auxiliary power) at relatively low beta, far from stability limits. Once the plasma is ignited, thermal runaway is prevented naturally by a combination of increased synchrotron radiation, burnout of the fuel in the plasma core and replacement by thermal alphas, and the reduction in the thermal plasma confinement assumed in L-mode-like scalings. 12 refs., 5 figs., 1 tab

  13. Transport simulations of ohmic ignition experiment: IGNITEX

    International Nuclear Information System (INIS)

    Uckan, N.A.; Howe, H.C.

    1987-12-01

    The IGNITEX device, proposed by Rosenbluth et al., is a compact, super-high-field, high-current, copper-coil tokamak envisioned to reach ignition with ohmic (OH) heating alone. Several simulations of IGNITEX were made with a 0-D global model and with the 1-D PROCTR transport code. It is shown that OH ignition is a sensitive function of the assumptions about density profile, wall reflectivity of synchrotron radiation, impurity radiation, plasma edge conditions, and additional anomalous losses. In IGNITEX, OH ignition is accessible with nearly all scalings based on favorable OH confinement (such as neo-Alcator). Also, OH ignition appears to be accessible for most (not all) L-mode scalings (such as Kaye-Goldston), provided that the density profile is not too broad (parabolic or more peaked profiles are needed), Z/sub eff/ is not too large, and anomalous radiation and alpha losses and/or other enhanced transport losses (eta/sub i/ modes, edge convective energy losses, etc.) are not present. In IGNITEX, because the figure-of-merit parameters are large, ignition can be accessed (either with OH heating alone or with the aid of a small amount of auxiliary power) at relatively low beta, far from stability limits. Once the plasma is ignited, thermal runaway is prevented naturally by a combination of increased synchrotron radiation, burnout of the fuel in the plasma core and replacement by thermal alphas, and the reduction in the thermal plasma confinement assumed in L-mode-like scalings. 12 refs., 5 figs., 1 tab

  14. Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

    Science.gov (United States)

    Khanna, Rohit

    In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride

  15. Direct high-temperature ohmic heating of metals as liquid pipes.

    Science.gov (United States)

    Grosse, A V; Cahill, J A; Liddell, W L; Murphy, W J; Stokes, C S

    1968-05-03

    When a sufficiently high electric current is passed through a liquid metal, the electromagnetic pressure pinches off the liquid metal and interrupts the flow of current. For the first time the pinch effect has been overcome by use of centrifugal acceleration. By rotation of a pipe of liquid metal, tin or bismuth or their alloys, at sufficiently high speed, it can be heated electrically without intermission of the electric current. One may now heat liquid metallic substances, by resistive (ohmic) heating, to 5000 degrees K and perhaps higher temperatures.

  16. AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

    International Nuclear Information System (INIS)

    Wang, H.T.; Tan, L.S.; Chor, E.F.

    2007-01-01

    Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 deg. C in flowing N 2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions

  17. Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

    Directory of Open Access Journals (Sweden)

    Wojciech Macherzynski

    2016-01-01

    Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

  18. Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

    International Nuclear Information System (INIS)

    Liu, Bingbing; Qin, Fuwen; Wang, Dejun

    2015-01-01

    Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

  19. Ohmic Heating: An Emerging Concept in Organic Synthesis.

    Science.gov (United States)

    Silva, Vera L M; Santos, Luis M N B F; Silva, Artur M S

    2017-06-12

    The ohmic heating also known as direct Joule heating, is an advanced thermal processing method, mainly used in the food industry to rapidly increase the temperature for either cooking or sterilization purposes. Its use in organic synthesis, in the heating of chemical reactors, is an emerging method that shows great potential, the development of which has started recently. This Concept article focuses on the use of ohmic heating as a new tool for organic synthesis. It presents the fundamentals of ohmic heating and makes a qualitative and quantitative comparison with other common heating methods. A brief description of the ohmic reactor prototype in operation is presented as well as recent examples of its use in organic synthesis at laboratory scale, thus showing the current state of the research. The advantages and limitations of this heating method, as well as its main current applications are also discussed. Finally, the prospects and potential implications of ohmic heating in future research in chemical synthesis are proposed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

    Science.gov (United States)

    Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

    2017-07-01

    Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

  1. Poloidal ohmic heating in a multipole

    International Nuclear Information System (INIS)

    Holly, D.J.; Prager, S.C.; Sprott, J.C.

    1982-07-01

    The feasibility of using poloidal currents to heat plasmas confined by a multipole field has been examined experimentally in Tokapole II, operating the machine as a toroidal octupole. The plasma resistivity ranges from Spitzer to about 1500 times Spitzer resistivity, as predicted by mirror-enhanced resistivity theory. This allows large powers (approx. 2 MW) to be coupled to the plasma at modest current levels. However, the confinement time is reduced by the heating, apparently due to a combination of the input power location (near the walls of the vacuum tank) and fluctuation-enhanced transport. Current-driven drift instabilities and resistive MHD instabilities appear to be the most likely causes for the fluctuations

  2. Start-up of the ohmic phase in JET

    International Nuclear Information System (INIS)

    Tanga, A.; Christiansen, J.P.; Cordey, J.G.; Ejima, S.; Kellman, A.; Lazzaro, E.; Lomas, P.J.; Thomas, P.R.

    1985-01-01

    JET has been designed to permit the study of plasmas in which alphaparticle heating is a significant part of the power balance. In order to have a sufficient thermonuclear yield and to trap the resulting alphaparticles, JET is similar in its dimensions and plasma current to the next generation of reactor-like devices such as NET, FER and INTOR. For this reason, the authors see the results from the study of the start-up of ohmically heated plasmas in JET as highly relevant. Discussed is the range that has been achieved in all major parameters with ohmic heating. Experiences with the wall conditioning technique and the results of ion cyclotron heating experiments in JET are outlined. This paper also describes the stages of plasma formation, current rise and ohmic flat-top

  3. Ohmic ignition of Neo-Alcator tokamak with adiabatic compression

    International Nuclear Information System (INIS)

    Inoue, Nobuyuki; Ogawa, Yuichi

    1992-01-01

    Ohmic ignition condition on axis of the DT tokamak plasma heated by minor radius and major radius adiabatic compression is studied assuming parabolic profiles for plasma parameters, elliptic plasma cross section, and Neo-Alcator confinement scaling. It is noticeable that magnetic compression reduces the necessary total plasma current for Ohmic ignition device. Typically in compact ignition tokamak of the minor radius of 0.47 m, major radius of 1.5 m and on-axis toroidal field of 20 T, the plasma current of 6.8 MA is sufficient for compression plasma, while that of 11.7 MA is for no compression plasma. Another example with larger major radius is also described. In such a device the large flux swing of Ohmic transformer is available for long burn. Application of magnetic compression saves the flux swing and thereby extends the burn time. (author)

  4. Computational studies of ohmic heating in the spheromak

    International Nuclear Information System (INIS)

    Olson, R.E.

    1983-01-01

    Time-dependent computational simulations using both single-fluid O-D and two-fluid 1 1/2-D models are developed for and utilized in an investigation of the ohmic heating of a spheromak plasma. The plasma density and composition, the applied magnetic field strength, the plasma size, and the plasma current density profile are considered for their effects on the spheromak heating rate and maximum achievable temperature. The feasibility of ohmic ignition of a reactor-size spheromak plasma is also contemplated

  5. Ohmic contacts to InN-based materials

    Directory of Open Access Journals (Sweden)

    Sai P. O.

    2016-10-01

    Full Text Available The key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact structure properties and optimal conditions for them are presented. Different types of metallization are considered, the advantages and disadvantages of each are determined, including the basic requirements that such contact must meet. There is emphasis on the using multilayer metallization with the barrier layers. In the case of the InAlN/GaN systems, the general approaches of forming ohmic contacts were considered.

  6. Ohmic discharges in Tore Supra - Marfes and detached plasmas

    International Nuclear Information System (INIS)

    Vallet, J.C.

    1990-01-01

    The Tore Supra plasma characteristics are given. The observed discharges are either leaning on the graphite inner first wall or limited by movable pump limiters located outboard and at the bottom of the vacuum chamber. The particular plasma conditions which lead to marfes and detached plasmas in ohmically heated He and D2 discharges limited by the inner wall are investigated. The results show that the ratio of radiated power to ohmic power increase linearly with M.g. As M.g rises, attached plasma, marfe and detached plasma are sequentially observed. Detached plasma with an effective radius as small as. 7 times the limiter radius was observed on Tore Supra

  7. W and WSix Ohmic contacts on p- and n-type GaN

    International Nuclear Information System (INIS)

    Cao, X.A.; Ren, F.; Pearton, S.J.; Zeitouny, A.; Eizenberg, M.; Zolper, J.C.; Abernathy, C.R.; Han, J.; Shul, R.J.; Lothian, J.R.

    1999-01-01

    W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 degree C. There is minimal reaction (≤100 Angstrom broadening of the metal/GaN interface) even at 1000 degree C. Specific contact resistances in the 10 -5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5x10 20 cm -3 , after annealing at 950 degree C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250 - 300 degree C, where the specific contact resistances are, typically, in the 10 -2 Ω cm 2 range. The best contacts for W and WSi x are obtained after 700 degree C annealing for periods of 30 - 120 s. The formation of β-W 2 N interfacial phases appear to be important in determining the contact quality. copyright 1999 American Vacuum Society

  8. Radial profiles of neutron emission from ohmic discharges in JET

    International Nuclear Information System (INIS)

    Cheetham, A.; Gottardi, N.; Jarvis, O.N.

    1989-01-01

    Neutron emission profiles from several ohmically heated discharges have been studied using a variety of analytical techniques to extract the ion temperature profiles which are found to agree well, both in shape and magnitude, with the electron temperature profiles as measured by the LIDAR Thomson scattering diagnostic. (author) 7 refs., 3 figs

  9. Flexible carbon-based ohmic contacts for organic transistors

    Science.gov (United States)

    Brandon, Erik (Inventor)

    2007-01-01

    The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer composite material for ohmic contacts (i.e. drain and source).

  10. Physicochemical properties of masa and corn tortilla made by ohmic ...

    African Journals Online (AJOL)

    Instant corn flour obtained by ohmic heating (OHICF) was used to prepare masa and tortillas. In this study, the effect of average particle size, moisture, and the final temperature on the physicochemical properties of masa and tortillas elaborated from OHICF was evaluated and were compared with flour obtained by the ...

  11. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

    KAUST Repository

    Yonkee, Benjamin P.; Young, Erin; DenBaars, Steven P; Speck, James S; Nakamura, Shuji

    2017-01-01

    Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

  12. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

    KAUST Repository

    Yonkee, Benjamin P.

    2017-10-31

    Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

  13. Design of TFTR movable limiter blades for ohmic and neutral-beam-heated plasmas

    International Nuclear Information System (INIS)

    Doll, D.W.; Ulrickson, M.A.; Cecchi, J.L.; Citrolo, J.C.; Weissenburger, D.; Bialek, J.

    1981-10-01

    A new set of movable limiter blades has been designed for TFTR that will meet both the requirements of the 4 MW ohmic heated and the 33 MW neutral beam heated plasmas. This is accomplished with three limiter blades each having and elliptical shape along the toroidal direction. Heat flux levels are acceptable for both ohmic heated and pre-strong compression plasmas. The construction consists of graphite tiles attached to cooled backing plates. The tiles have an average thickness of approx. 4.7 cm and are drawn against the backing plate with spring loaded fasteners that are keyed into the graphite. The cooled backing plate provides the structure for resisting disruption and fault induced loads. A set of rollers attached to the top and bottom blades allow them to be expanded and closed in order to vary the plasma surface for scaling experiments. Water cooling lines penetrate only the mid-plane port cover/support plate in such a way as to avoid bolted water connections inside the vacuum boundary and at the same time allow blade movement. Both the upper and lower blades are attached to the mid-plane limiter blade through pivots. Pivot connections are protected against arcing with an alumina coating and a shunt bar strap. Remote handling is considered throughout the design

  14. Laminar forced convection in a cylindrical collinear ohmic sterilizer

    Directory of Open Access Journals (Sweden)

    Pesso Tommaso

    2017-01-01

    Full Text Available The present work deals with a thermo-fluid analysis of a collinear cylindrical ohmic heater in laminar flow. The geometry of interest is a circular electrically insulated glass pipe with two electrodes at the pipe ends. For this application, since the electrical conductivity of a liquid food depends strongly on the temperature, the thermal analysis of an ohmic heater requires the simultaneous solution of the electric and thermal fields. In the present work the analysis involves decoupling the previous fields by means of an iterative procedure. The thermal field has been calculated using an analytical solution, which leads to fast calculations for the temperature distribution in the heater. Some considerations of practical interest for the design are also given.

  15. Investigation of the density turbulence in ohmic ASDEX plasmas

    International Nuclear Information System (INIS)

    Dodel, G.; Holtzhauer, E.

    1989-01-01

    A 119 μm homodyne laser scattering experiment is used on ASDEX to investigate wavenumber and frequency of the density fluctuations occuring in the different operational conditions of the machine. The changes of the density turbulence caused by additional heating are of primary interest with regard to a possible correlation to anomalous transport. Therefore, in the current experiment particular emphasis is placed on these investigations. On the other hand it is the ohmic phase which constitutes the least complicated physical situation in a tokamak and is therefore best suited to reveal the basic physical nature of the density turbulence. In the following we present a summary of our findings in the ohmic phase and make an attempt to compare these findings with what would be expected from the simplest model of density-gradient-driven driftwave turbulence saturated at the mixing-length level. (author) 3 refs., 4 figs

  16. Investigation of the density turbulence in ohmic ASDEX plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Dodel, G; Holtzhauer, E [Stuttgart Univ. (Germany, F.R.). Inst. fuer Plasmaforschung; Giannone, L.; Niedermeyer, H [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany, F.R.)

    1989-01-01

    A 119 {mu}m homodyne laser scattering experiment is used on ASDEX to investigate wavenumber and frequency of the density fluctuations occuring in the different operational conditions of the machine. The changes of the density turbulence caused by additional heating are of primary interest with regard to a possible correlation to anomalous transport. Therefore, in the current experiment particular emphasis is placed on these investigations. On the other hand it is the ohmic phase which constitutes the least complicated physical situation in a tokamak and is therefore best suited to reveal the basic physical nature of the density turbulence. In the following we present a summary of our findings in the ohmic phase and make an attempt to compare these findings with what would be expected from the simplest model of density-gradient-driven driftwave turbulence saturated at the mixing-length level. (author) 3 refs., 4 figs.

  17. The ohmic heating power supply for HL-1 tokamak

    International Nuclear Information System (INIS)

    Mingrui, Z.; Jiashun, C.

    1986-01-01

    A combination of capacitor banks, inductor and DC Fly wheel-Generator sets are used as ohmic heating power supply (OHPS) for HL-1, which is the largest tokamak in China. This system can give changeable waveform of current in a simple way, because of the use of protection for capacitor banks by changeable connection in easy way. Since the technology of forced zero current in the commutating breaker and synchronous self-triggering crowbar are used, the smooth conversion between the wave front provided by discharge of the capacitor banks and the flat top sustained by the inductor and flywheel realized. The performance of the system was tested by a dummy load and the system has been used in the HL-1 experiments. It is confirmed that this system is sufficiently available for the ohmic heating and has important effects on the long plasma lasting time on the order of 1 sec

  18. Transport and turbulence in TORE SUPRA ohmic discharges

    International Nuclear Information System (INIS)

    Garbet, X.; Payan, J.; Laviron, C.; Devynck, P.; Saha, S.K.; Capes, H.; Chen, X.P.; Coulon, J.P.; Gil, C.; Harris, G.; Hutter, T.; Pecquet, A.L.

    1992-01-01

    The mechanisms underlying the energy confinement behaviour in ohmic tokamak discharges are not yet understood. It is well known that the confinement time increases with the average density and saturates above a critical value of the density, but several explanations exist for this saturation. The present study is an analysis of a set of ohmic discharges in Tore Supra with I p =1.6 MA, B=4 T, R=2.35 m and a=0.78 m, where the average density was increased from 0.9 to 4.2 10 19 m -3 . For these plasma parameters, the energy confinement time given by magnetic measurements saturates for e > ≥ 2.5 10 19 m -3 . It is emphasized here that the onset of ionic turbulence is unlikely in Tore Supra. This conclusion relies on a transport analysis and turbulence measurements by CO 2 laser scattering, whose results are presented in this paper

  19. Parametric studies in ohmically heated plasmas in Heliotron E

    International Nuclear Information System (INIS)

    Mutoh, T.; Besshou, S.; Ijiri, Y.

    1983-01-01

    Parametric studies of volume averaged electron temperature and global electron energy confinement time /tau/epsilon /SUB e/ of ohmically heated Heliotron E plasmas have been performed using a data acquisition computer system. The scaling laws α (I /SUB OH/ x B/n /SUB e/) /SUP 1/2/ and /tau/epsilon /SUB e/ α n /SUP -1/2/ /SUB e/ x B/I /SUP 3/2/ /SUB OH/ are obtained directly by a code which fits the exponents of the plasma parameters ponents of the plasma parameters to the electron temperature and confinement time. The ohmically heated plasma confinement time /tau/epsilon /SUB e/ is shown to be related to the drift parameters xi (= V /SUB De/ /V /SUB Te/). The dependences of the energy confinement time on other plasma parameters is also presented. An investigation is made of the correlation between MHD activity and the confinement

  20. Effects of the ohmic current on collective scattering spectra

    International Nuclear Information System (INIS)

    Castiglioni, S.; Lontano, M.; Tartari, U.

    1993-01-01

    A numerical and analytical study of the modifications induced in the collective scattering spectra by the ohmic current governing the equilibrium magnetic configuration in toroidal plasmas is presented. The spectral density function is calculated assuming equilibrium distributions for the (bulk and impurity) ion species and a Spitzer-like distribution to describe the response of the electrons to the applied DC electric field. As expected, the spectral asymmetries can be non-negligibly enhanced in the region of the ion-acoustic frequency. They reach their maxima for tangential scattering geometries, where the magnetic effects on the spectra are negligible. This justifies the assumption of the non-magnetized spectra. A theoretically motivated potential is shown to exist for a more detailed experimental investigation of the feasibility of current-density measurements in ohmic plasmas, based on collective scattering. (author)

  1. Compound sawtooth study in ohmically heated TFTR plasmas

    International Nuclear Information System (INIS)

    Yamada, H.; McGuire, K.; Colchin, D.

    1985-09-01

    Compound sawtooth activity has been observed in ohmically heated, high current, high density TFTR plasmas. Commonly called ''double sawteeth,'' such sequences consist of a repetitive series of subordinate relaxations followed by a main relaxation with a different inversion radius. The period of such compound sawteeth can be as long as 100 msec. In other cases, however, no compound sawteeth or bursts of them can be observed in discharges with essentially the same parameters

  2. Power balance in an Ohmically heated fusion reactor

    International Nuclear Information System (INIS)

    Christiansen, J.P.; Roberts, K.V.

    1982-01-01

    A simplified power-balance equation (zero-dimensional model) is used to study the performance of an Ohmically heated fusion reactor with emphasis on a pulsed reversed-field pinch concept (RFP). The energy confinement time tausub(E) is treated as an adjustable function, and empirical tokamak scaling laws are employed in the numerical estimates, which are supplemented by 1-D ATHENE code calculations. The known heating rates and energy losses are represented by the net energy replacement time tausub(W), which is exhibited as a surface in density (n) and temperature (T) space with a saddle point (nsub(*), Tsub(*)), the optimum ignition point. It is concluded that i) ignition by Ohmic heating is more practicable for the RFP reactor than for a tokamak reactor with the same tausub(E), (ii) if at fixed current the minor radius can be reduced or at fixed minor radius the current can be increased, then it is found that Ohmic ignition becomes more likely when present tokamak scaling laws are used. More definitive estimates require, however, a knowledge of tausub(E), which can only be obtained by establishing a reliable set of experimental RFP scaling laws and, in particular, by extending RFP experiments closer to the reactor regime. (author)

  3. Ohmic H-mode studies in TUMAN-3

    International Nuclear Information System (INIS)

    Lebedev, S.V.; Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Levin, L.S.; Tukachinsky, A.S.; Tendler, M.

    1994-01-01

    The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. The crucial role of the radial electric field in the L-H transition was found in the experiments with boundary biasing. The possibility of initiating the H-mode using single pellet injection was demonstrated. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Thermal energy confinement time enhanced by a factor of 10 compared to predictions of Neo-Alcator scaling. Longest energy confinement time (30 ms) was obtained in the small tokamak TUMAN-3. Absolute values of the energy confinement time are in agreement with scaling proposed for description of the ELM-free H-modes in devices with powerful auxiliary heating (''DIII-D/JET H-mode'' scaling). (author)

  4. The role of titanium aluminide in n-gallium nitride ohmic contact technology

    Science.gov (United States)

    Pelto, Christopher M.

    Ohmic contacts are essential to the realization of efficient and affordable nitride-based electronic and optoelectronic devices. Currently, the most successful ohmic contact schemes to n-GaN are based on the Al/Ti bilayer structure, although the mechanism responsible for the low resistance in these contacts is not sufficiently understood. In this work, the intermetallic TiAl3 has been employed both as a model ohmic contact system to help understand the essential features of the Al/Ti standard contact, as well as a thermally stable oxidation cap for the bilayer structure. A quaternary isotherm of the Al-Ti-Ga-N system was calculated at 600°C, which showed that a sufficient phase topology was present to apply the exchange mechanism to the TiAl 3/GaN couple. The exchange mechanism rationalized the selection of the TiAl3 intermetallic by predicting that an Al-rich AlGaN layer will form at the metal/semiconductor interface. As part of the investigation of these novel contact systems, a thorough characterization was undertaken on both a standard Al/Ti and Au/Ni/Al/Ti contact to n-GaN in which the essential processing parameters and metallurgical properties were identified. The TiAl 3 contact was found to exhibit inferior electrical behavior compared to the Al/Ti bilayer, requiring significantly higher annealing temperatures to achieve comparable specific contact resistance. It is conjectured that this is due to the early formation of a TiN layer at the metal/semiconductor interface of the bilayer contact, even though both contacts are suspected to form the Al-rich nitride layer at higher temperature. As an oxidation cap, the TiAl3 metallization was found to provide much improved performance characteristics compared to the four-layer Au/Al/Ni/Ti standard. The TiAl 3/Al/Ti contact proved to achieve optimal performance at a much lower temperature than the standard, and furthermore showed complete insensitivity to the oxidation content of the annealing ambient. Reaction

  5. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, A., E-mail: alexander.schmid@physik.tu-freiberg.de; Schroeter, Ch.; Otto, R.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg (Germany); Schuster, M. [Namlab gGmbH, 01187 Dresden (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg (Germany)

    2015-02-02

    Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

  6. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

    Directory of Open Access Journals (Sweden)

    Patrick H. Carey IV

    2017-09-01

    Full Text Available AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

  7. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

    Science.gov (United States)

    Carey, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

    2017-09-01

    AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 30 0°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 40 0°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

  8. Ti/Al Ohmic Contacts to n-Type GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Gangfeng Ye

    2011-01-01

    Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

  9. Energy confinement scaling in tokamaks: some implications of recent experiments with ohmic and strong auxiliary heating

    International Nuclear Information System (INIS)

    Goldston, R.J.

    1984-02-01

    Recent results from confinement scaling experiments on tokamaks with ohmic and strong auxiliary heating are reviewed. An attempt is made to draw these results together into a low-density ohmic confinement scaling law, and a scaling law for confinement with auxiliary heating. The auxiliary heating confinement law may also serve to explain the saturation in tau/sub E/ vs anti n/sub e/ observed in some ohmic heating density scaling experiments

  10. Alternate ohmic heating coil arrangements for compact tokamak

    International Nuclear Information System (INIS)

    Dawson, J.W.; Moretti, A.; Stevens, H.C.; Thompson, K.

    1978-01-01

    The results for a number of ohmic heating (OH) coil arrangements which will allow the reduction of the major radius of Experimental Power Reactor (EPR) tokamaks will be given. In each case the results are compared, at least indirectly, to the reference case, which has the OH solenoid inside the central core of the reactor. The goal for the alternate geometries studied was to stay within the requirements imposed by the EPR conditions on the plasma and to produce as much or more OH V-s as the reference case

  11. Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

    Science.gov (United States)

    Cui, Xu

    MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

  12. Ohmic losses in coaxial resonators with longitudinal inner-outer corrugation

    Energy Technology Data Exchange (ETDEWEB)

    Shenyong Hou, A. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yangtze Normal University, Chongqing 408001 (China); Sheng Yu, B.; Hongfu Li, C.; Qixiang Zhao, D. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Xiang Li, E. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Queen Mary University of London, London E1 4NS (United Kingdom)

    2013-05-15

    In this paper, a coaxial resonator with longitudinal inner-outer corrugation is introduced. Its eigen-equation and expression of ohmic losses are derived. Ohmic losses in the cavity are investigated. Results show that ohmic losses in the outer and inner conductors share a similar variation trend, while the former is larger than the later. What's more, changes of the inner and outer slot depth and width induce different variations of ohmic losses on the surface of the inner and outer conductors.

  13. Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN

    Science.gov (United States)

    Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

    2014-11-01

    Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

  14. Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

    OpenAIRE

    Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

    2008-01-01

    The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

  15. Ohmic H-mode and confinement in TCV

    International Nuclear Information System (INIS)

    Moret, J.-M.; Anton, M.; Barry, S.

    1995-01-01

    The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied (κ = 1.3 - 1.9, δ 0.1 - 0.7) has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1 - 0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence of absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ∼ 1.6) in long H-modes (1.5 s). (Author)

  16. Ohmic H-mode and confinement in TCV

    International Nuclear Information System (INIS)

    Moret, J.M.; Anton, M.; Barry, S.

    1995-01-01

    The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied, has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1-0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence or absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ≅1.6) in long H-modes (1.5 s). (author) 9 figs., 9 refs

  17. THREE-DIMENSIONAL ATMOSPHERIC CIRCULATION MODELS OF HD 189733b AND HD 209458b WITH CONSISTENT MAGNETIC DRAG AND OHMIC DISSIPATION

    International Nuclear Information System (INIS)

    Rauscher, Emily; Menou, Kristen

    2013-01-01

    We present the first three-dimensional circulation models for extrasolar gas giant atmospheres with geometrically and energetically consistent treatments of magnetic drag and ohmic dissipation. Atmospheric resistivities are continuously updated and calculated directly from the flow structure, strongly coupling the magnetic effects with the circulation pattern. We model the hot Jupiters HD 189733b (T eq ≈ 1200 K) and HD 209458b (T eq ≈ 1500 K) and test planetary magnetic field strengths from 0 to 30 G. We find that even at B = 3 G the atmospheric structure and circulation of HD 209458b are strongly influenced by magnetic effects, while the cooler HD 189733b remains largely unaffected, even in the case of B = 30 G and super-solar metallicities. Our models of HD 209458b indicate that magnetic effects can substantially slow down atmospheric winds, change circulation and temperature patterns, and alter observable properties. These models establish that longitudinal and latitudinal hot spot offsets, day-night flux contrasts, and planetary radius inflation are interrelated diagnostics of the magnetic induction process occurring in the atmospheres of hot Jupiters and other similarly forced exoplanets. Most of the ohmic heating occurs high in the atmosphere and on the dayside of the planet, while the heating at depth is strongly dependent on the internal heat flux assumed for the planet, with more heating when the deep atmosphere is hot. We compare the ohmic power at depth in our models, and estimates of the ohmic dissipation in the bulk interior (from general scaling laws), to evolutionary models that constrain the amount of heating necessary to explain the inflated radius of HD 209458b. Our results suggest that deep ohmic heating can successfully inflate the radius of HD 209458b for planetary magnetic field strengths of B ≥ 3-10 G.

  18. Effect of electrode type in the resistive switching behaviour of TiO2 thin films

    International Nuclear Information System (INIS)

    Hernández-Rodríguez, E; Zapata-Torres, M; Márquez-Herrera, A; Zaleta-Alejandre, E; Meléndez-Lira, M; Cruz, W de la

    2013-01-01

    The influence of the electrode/active layer on the electric-field-induced resistance-switching phenomena of TiO 2 -based metal-oxide-metal devices (MOM) is studied. TiO 2 active layers were fabricated by the reactive rf-sputtering technique and devices were made by sandwiching between several metal electrodes. Three different MOM devices were made, according with the junction type formed between the electrode and the TiO 2 active layer, those where Ohmic-Ohmic, Ohmic-Schottky and Schottky-Schottky. The junction type was tested by electrical I-V measurements. It was found that MOM devices made with the Ohmic-Ohmic combination did not show any resistive switching behaviour in contrast with devices made with Ohmic-Schottky and Schottky-Schottky combinations. From a detailed analysis of the I-V curves it was found that transport characteristics are Ohmic for the low-resistance state for all the contacts combinations of the MOM devices, whereas in the high-resistance state it depends on contact combinations and can be identified as Ohmic, Schottky and Poole-Frenkel type. These conduction mechanisms in the low- and high-resistance states suggest that formation and rupture of conducting filaments through the film oxide is the mechanism responsible for the resistance switching.

  19. Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study

    Science.gov (United States)

    Radulescu, Fabian

    2000-12-01

    associated with each phase from the videotape recordings. With the exception of the Pd-GaAs interactions, it was found that four phase transformations occur during annealing of the Pd:Ge thin films on top of GaAs. The microstructural information was correlated with specific ohmic contact resistivity measurements performed in accordance with the transmission line method (TLM) and these results demonstrated that the Ge SPE growth on top of GaAs renders the optimal electrical properties for the contact. By using the focused ion beam (FIB) method to produce microcantilever beams, the residual stress present in the thin film system was studied in connection with the microstructure. Although, the PdGe/epi-Ge/GaAs seemed to be the optimal microstructural configuration, the presence of PdGe at the interface with GaAs did not damage the contact resistivity significantly. These results made it difficult to establish a charge transport mechanism across the interface but they explained the wide processing window associated with this contact.

  20. Facet formation and ohmic contacts for laser diodes on non- and semipolar GaN

    Energy Technology Data Exchange (ETDEWEB)

    Rass, Jens; Ploch, Simon; Vogt, Patrick [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Wernicke, Tim; Redaelli, Luca; Einfeldt, Sven [Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany)

    2009-07-01

    Group-III-Nitride heterostructures grown on nonpolar and semipolar planes allow the realization of highly efficient devices such as laser diodes and LEDs due to the reduction or elimination of the quantum confined Stark effect. However, the realization of these devices poses a number of challenges, in particular the formation of smooth laser facets and the fabrication of ohmic contacts. In this talk optimized schemes for facet formation and contact resistance reduction for nitride based devices on non- and semipolar planes are presented, and various concepts are discussed. We discuss a laser scribing process that allows the cleaving of facets along the c- and a-plane for devices grown on nonpolar substrates. For semipolar planes there is no low-index cleavage plane in order to form resonators along the projection of the c-axis. Therefore we have investigated etching techniques in order to produce flat facets perpendicular to the plane of growth. For the challenging formation of p-type contacts to GaN we discuss different methods such as chemical treatments, different metallization schemes and capping layers to reduce the contact resistivity.

  1. Modelling ohmic confinement experiments on the START tokamak

    International Nuclear Information System (INIS)

    Roach, C.M.

    1996-05-01

    Ohmic confinement data from the tight aspect ratio tokamak START has been analysed using the ASTRA transport simulation code. Neoclassical expressions have been modified to describe tight aspect ratio configurations, and the comparison between START data and models of anomalous transport has been made quantitative using the standard χ 2 test from statistics. Four confinement models (T11, Rebut-Lallia-Watkins, Lackner-Gottardi, and Taroni et al's Bohm model) have been compared with the START data. Three of the models are found to simulate START's electron temperature data moderately well, while Taroni et al's Bohm model overestimates electron temperatures in START by an order of magnitude. Thus comparison with START data tends to discriminate against Bohm models; these models are pessimistic or ITER. (author)

  2. Effect of Boronization on Ohmic Plasmas in NSTX

    International Nuclear Information System (INIS)

    Skinner, C.H.; Kugel, H.; Maingi, R.; Wampler, W.R.; Blanchard, W.; Bell, M.; Bell, R.; LeBlanc, B.; Gates, D.; Kaye, S.; LaMarche, P.; Menard, J.; Mueller, D.; Na, H.K.; Nishino, N.; Paul, S.; Sabbagh, S.; Soukhanovskii, V.

    2001-01-01

    Boronization of the National Spherical Torus Experiment (NSTX) has enabled access to higher density, higher confinement plasmas. A glow discharge with 4 mTorr helium and 10% deuterated trimethyl boron deposited 1.7 g of boron on the plasma facing surfaces. Ion beam analysis of witness coupons showed a B+C areal density of 10 to the 18 (B+C) cm to the -2 corresponding to a film thickness of 100 nm. Subsequent ohmic discharges showed oxygen emission lines reduced by x15, carbon emission reduced by two and copper reduced to undetectable levels. After boronization, the plasma current flattop time increased by 70% enabling access to higher density, higher confinement plasmas

  3. Ohmic heating of a spheromak to 100 eV

    Energy Technology Data Exchange (ETDEWEB)

    Jarboe, T.R.; Barnes, C.W.; Henins, I.; Hoida, H.W.; Knox, S.O.; Linford, R.K.; Sherwood, A.R.

    1984-01-01

    The first spheromaks with Thomson-scattering-measured electron temperatures of over 100 eV are described. The spheromak is generated by a magnetized coaxial plasma source in a background gas of 30 mTorr of H/sub 2/, and it is stably confined in an oblate 80 cm diam copper mesh flux conserver. The open mesh design allows rapid impurity transport out of the spheromak. The peak temperature, measured using multipoint Thomson scattering, is observed to rise from approximately 25 eV to over 100 eV in about 0.2 msec due to Ohmic heating from the decaying magnetic fields. Density (approx.5 x 10/sup 13/ cm/sup -3/) and magnetic fields (approximately 2 kG) are measured using interferometry and magnetic probes.

  4. Ohmic heating of a spheromak to 100 eV

    International Nuclear Information System (INIS)

    Jarboe, T.R.; Barnes, C.W.; Henins, I.; Hoida, H.W.; Knox, S.O.; Linford, R.K.; Sherwood, A.R.

    1984-01-01

    The first spheromaks with Thomson-scattering-measured electron temperatures of over 100 eV are described. The spheromak is generated by a magnetized coaxial plasma source in a background gas of 30 mTorr of H 2 , and it is stably confined in an oblate 80 cm diam copper mesh flux conserver. The open mesh design allows rapid impurity transport out of the spheromak. The peak temperature, measured using multipoint Thomson scattering, is observed to rise from approximately 25 eV to over 100 eV in about 0.2 msec due to Ohmic heating from the decaying magnetic fields. Density (approx.5 x 10 13 cm -3 ) and magnetic fields (approximately 2 kG) are measured using interferometry and magnetic probes

  5. New fast switches for the Tore Supra ohmic heating circuit

    International Nuclear Information System (INIS)

    Zunino, K.; Bruneth, J.; Cara, P.; Louart, A.; Santagiustina, A.; Emelyanova, I.; Filippov, F.; Mikailov, N.

    2003-01-01

    The Tore-Supra ohmic heating circuit is equipped with four fast make switches and one fast opening switch. After many years of operation, it became necessary to substitute this equipment by modern components with similar ratings. An extensive research has been undertaken to find fast switches able to withstand more than 2500 operations per year without maintenance, at a make current of 54 kA, a voltage of 12 kV and with a closing time of less than 15 ms. At the end of the investigation, it was decided to replace the old components by fast mechanical switches proposed by the Efremov Institute and based on a prototype developed for ITER. This paper presents the technical requirements and the characteristics of the switches and describes the operational experience gained with these components during operating campaigns of 2002 and 2003. (authors)

  6. An ohmic heating circuit for the CASTOR tokamak

    International Nuclear Information System (INIS)

    Valovic, M.

    1989-07-01

    To extend the duration of the CASTOR tokamak discharge to the limit given by the toroidal magnetic field pulse, a simple ohmic heating circuit is proposed. It exploits two condenser banks charged to different voltages and switched by means of an ignitron switch. The circuit parameters are chosen so as to achieve optimum current ramp-up and flat-top phases. The choice of parameters was checked using a simple computer code, with the nonlinear magnetization of the transformer core being taken into account. The results of calculation are compared with those of an experimental test shot with a discharge current and duration of 19 kA and 40 ms, respectively. (J.U.). 3 figs., 4 refs

  7. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    International Nuclear Information System (INIS)

    Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

    2015-01-01

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

  8. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  9. Al and Cu Implantation into Silicon Substrate for Ohmic Contact in Solar Cell Fabrication

    International Nuclear Information System (INIS)

    Sri Sulamdari; Sudjatmoko; Wirjoadi; Yunanto; Bambang Siswanto

    2002-01-01

    Research on the implantation of Al and Cu ions into silicon substrate for ohmic contact in solar cell fabrication has been carried using ion accelerator machine. Al and Cu ions are from 98% Al and 99.9% Cu powder ionized in ion source system. provided in ion implantor machine. Before implantation process, (0.5 x 1) cm 2 N type and P type silicon were washed in water and then etched in Cp-4A solution. After that, P type silicon were implanted with Al ions and N type silicon were implanted with Cu ions with the ions dose from 10 13 ion/cm 2 - 10 16 ion/cm 2 and energy 20 keV - 80 keV. Implanted samples were then annealed at temperature 400 o C - 850 o C. Implanted and annealed samples were characterized their resistivities using four point probe FPP-5000. It was found that at full electrically active conditions the ρ s for N type was 1.30 x 10 8 Ω/sq, this was achieved at ion dose 10 13 ion/cm 2 and annealing temperature 500 o C. While for P type, the ρ s was 1.13 x 10 2 Ω/sq, this was achieved at ion dose 10 13 ion/cm 2 and energy 40 keV, and annealing temperature 500 o C. (author)

  10. Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

    International Nuclear Information System (INIS)

    Hu, C.Y.; Qin, Z.X.; Feng, Z.X.; Chen, Z.Z.; Ding, Z.B.; Yang, Z.J.; Yu, T.J.; Hu, X.D.; Yao, S.D.; Zhang, G.Y.

    2006-01-01

    The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450 deg. C. At the same time, the O diffuses to the metal-semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c ) at 450 deg. C. At 500 deg. C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600 deg. C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly

  11. Decoherence plus spontaneous symmetry breakdown generate the ''ohmic'' view of the state-vector collapse

    International Nuclear Information System (INIS)

    Ne'eman, Y.; Univ. of Texas, Austin, TX

    1993-06-01

    The collapse of the state-vector is described as a phase transition due to three features. First, there is the atrophying of indeterminacy for macroscopic objects -- including the measurement apparatus. Secondly, there is the environment decohering mechanism, as described by Zeh, Joos and others -- dominant in macroscopic objects. As a result, the classical background, an input in the Copenhagen prescriptions, is generated as an ''effective'' picture, similar to the ''effective'' introduction of Ohmic resistance or of thermodynamical variables, when going from the micro to the macroscopic; in this case, the collectivized substrate is provided by the multiplicity of photon scatterings, etc., on top of the effect of the large number of particles in macroscopic objects. Thirdly, there is the Everett ''branching'', i.e. the materialization of one of the now decoherent states, accompanied by the destruction of the other branches. By definition, quantum indeterminancy represents a symmetry; in a measurement, or in a branching, this symmetry is broken ''spontaneously'', involving a Ginzburg-Landau type potential with asymmetric minima, thus concretizing the quantum ''dice'' without the burden of ''many worlds''. The authors review and systematize the various phase transitions relating quantum to classical phenomena

  12. Ohmic cooking of whole beef muscle--evaluation of the impact of a novel rapid ohmic cooking method on product quality.

    Science.gov (United States)

    Zell, Markus; Lyng, James G; Cronin, Denis A; Morgan, Desmond J

    2010-10-01

    Cylindrical cores of beef semitendinosus (500g) were cooked in a combined ohmic/convection heating system to low (72 degrees C, LTLT) and high (95 degrees C, HTST) target end-point temperatures. A control was also cooked to an end-point temperature of 72 degrees C at the coldest point. Microbial challenge studies on a model meat matrix confirmed product safety. Hunter L-values showed that ohmically heated meat had significantly (pHTST)) relative to the control (56.85). No significant texture differences (p>/=0.05) were suggested by Warner-Bratzler peak load values (34.09, 36.37 vs. 35.19N). Cook loss was significantly (pHTST and the control were more comparable (6.09 and 7.71, respectively). These results demonstrate considerable potential for this application of ohmic heating for whole meats. Copyright (c) 2010 The American Meat Science Association. Published by Elsevier Ltd. All rights reserved.

  13. Turbulence and energy confinement in TORE SUPRA ohmic discharges

    International Nuclear Information System (INIS)

    Garbet, X.; Payan, J.; Laviron, C.; Devynck, P.; Saha, S.K.; Capes, H.; Chen, X.P.; Coulon, J.P.; Gil, C.; Harris, G.; Hutter, T.; Pecquet, A.L.

    1992-06-01

    Results on confinement and turbulence from a set of ohmic discharges in Tore Supra are discussed. The attention is focused on the saturation of the energy confinement time and it is emphasized that this saturation could be explained by a saturation of the electron heat diffusivity. Ion behaviour is indeed governed by dilution and equipartition effects. Although the ion heat transport is never neoclassical, there is no enhanced degradation at the saturation. This behaviour is confirmed by turbulence measurements given by CO 2 laser coherent scattering. The density fluctuations level follows the electron heat diffusivity variations with the average density. Waves propagating in the ion diamagnetic direction are always present in turbulence frequency spectra. Thus, the saturation cannot be explained by the onset of an ion turbulence. The existence of an ion turbulence at the edge at all densities cannot be excluded. However, this ion feature in scattering spectra could be explained by a Doppler shift associated to an inversion point of the radial electric field at the edge

  14. Desgn of a 20-MJ superconducting ohmic-heating coil

    International Nuclear Information System (INIS)

    Singh, S.K.; Murphy, J.H.; Janocko, M.A.; Haller, H.E.; Litz, D.C.; Eckels, P.W.; Rogers, J.D.; Thullen, P.

    1979-01-01

    Conceptual designs of 20-MJ superconducting coils which were developed to demonstrate the feasibility of an ohmic-heating system were discussed. The superconductor materials were NbTi and Nb 3 Sn for the pool boil and forced-flow cooling, respectively. The coils were designed to be cryostable for bipolar operation from +7 to -7 tesla maximum field within one second. The structural design addresses the distribution of structure and structural materials used in the pulsed field environment. The cyclic stresses anticipated and the fatigue limits of the structural materials were examined in view of the operating life of the coil. The coils were designed to generate the flux swings while simultaneously meeting the limitations imposed by cooling, insulation, current density and the stresses in the materials. Both the pool and forced cooled conductors have the same criterion for cryostability, i.e., the conductor must return to the superconducting state from an initial temperature of 20 0 K while the full transport current is flowing through the conductor

  15. Analysis of a global energy confinement database for JET ohmic plasmas

    International Nuclear Information System (INIS)

    Bracco, G.; Thomsen, K.

    1997-01-01

    A database containing global energy confinement data for JET ohmic plasmas in the campaigns from 1984 to 1992 has been established. An analysis is presented of this database and the results are compared with data from other tokamaks, such as the Axially Symmetric Divertor Experiment (ASDEX), Frascati Tokamak Upgrade (FTU) and Tore Supra. The trends of JET ohmic confinement appear to be similar to those observed on other tokamaks: a linear dependence of the global energy confinement time on density is observed up to a density value where a saturation is attained; this density value defines the border between the linear and the saturated ohmic confinement regimes; this border is shifted towards higher density values if the q value of the discharge is decreased; the global confinement time in the saturated ohmic regime increases less than linearly with the value of the magnetic field. (author). 20 refs, 13 figs, 4 tabs

  16. Innovative food processing technology using ohmic heating and aseptic packaging for meat.

    Science.gov (United States)

    Ito, Ruri; Fukuoka, Mika; Hamada-Sato, Naoko

    2014-02-01

    Since the Tohoku earthquake, there is much interest in processed foods, which can be stored for long periods at room temperature. Retort heating is one of the main technologies employed for producing it. We developed the innovative food processing technology, which supersede retort, using ohmic heating and aseptic packaging. Electrical heating involves the application of alternating voltage to food. Compared with retort heating, which uses a heat transfer medium, ohmic heating allows for high heating efficiency and rapid heating. In this paper we ohmically heated chicken breast samples and conducted various tests on the heated samples. The measurement results of water content, IMP, and glutamic acid suggest that the quality of the ohmically heated samples was similar or superior to that of the retort-heated samples. Furthermore, based on the monitoring of these samples, it was observed that sample quality did not deteriorate during storage. © 2013. Published by Elsevier Ltd on behalf of The American Meat Science Association. All rights reserved.

  17. Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

    Science.gov (United States)

    Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F.

    2017-10-01

    In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type implanted silicon carbide (4H-SiC) were studied employing different techniques. With increasing the annealing temperature, an improvement of the electrical properties of the contacts is highlighted, until an Ohmic behavior is obtained at 950 °C, with a specific contact resistance ρc = 2.3 × 10-4 Ω cm2. A considerable intermixing of the metal layers occurred upon annealing, as a consequence of the formation of different phases, both in the uppermost part of the stack (mainly Al3Ni2) and at the interface with SiC, where the formation of preferentially aligned TiC is observed. The formation of an Ohmic contact was associated with the occurrence of the reaction and the disorder at the interface, where the current transport is dominated by the thermionic field emission mechanism with a barrier height of 0.56 eV.

  18. Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN

    International Nuclear Information System (INIS)

    Cao, X. A.; Piao, H.; LeBoeuf, S. F.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2006-01-01

    The effects of surface treatment using Cl 2 /BCl 3 and Ar inductive coupled plasmas on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-type Al x Ga 1-x N (x=0-0.5) were investigated. Plasma treatment significantly increased the surface conductivity of GaN and Al 0.1 Ga 0.9 N, leading to improved Ohmic behaviors of the contacts. However, it reduced the surface doping level in Al x Ga 1-x N (x≥0.3) and degraded the contact properties. Following a 900-1000 deg. C anneal, the Ti/Al/Ti/Au contacts to Al x Ga 1-x N (x=0-0.3) became truly Ohmic, with specific contact resistances of (3-7)x10 -5 Ω cm 2 , whereas the contact to Al 0.5 Ga 0.5 N remained rectifying even without the plasma treatment. X-ray photoelectron spectroscopy measurements confirmed that the Fermi level moved toward the conduction band in GaN after the plasma treatment, but it was pinned by plasma-induced deep-level states in Al 0.5 Ga 0.5 N. This study emphasizes the need to mitigate plasma damage introduced during the mesa etch step for AlGaN-based deep-UV emitters and detectors

  19. Ohmic Heating Technology and Its Application in Meaty Food: A Review

    OpenAIRE

    Rishi Richa; N. C. Shahi; Anupama Singh; U. C. Lohani; P. K. Omre; Anil Kumar; T. K. Bhattacharya

    2017-01-01

    The purpose of the current review paper is to investigate and analyze about the effects of ohmic heating (OH) different application in the field of fish, meat and its product and compare it with other conventional thermal methods of food processing such as thawing, heating, cooking etc. Food quality, food safety, convenience, freshness, healthy food, natural flavor and taste with extended shelf-life are the main criteria for the demand made by today’s consumers. Ohmic heating is a substitute ...

  20. Effects of Ohmic Heating on Microbial Counts and Denaturatiuon of Proteins in Milk

    OpenAIRE

    SUN, Huixian; KAWAMURA, Shuso; HIMOTO, Jun-ichi; ITOH, Kazuhiko; WADA, Tatsuhiko; KIMURA, Toshinori

    2008-01-01

    The aim of this study was to compare the inactivation effects of ohmic heating (internal heating by electric current) and conventional heating (external heating by hot water) on viable aerobes and Streptococcus thermophilus 2646 in milk under identical temperature history conditions. The effects of the two treatments on quality of milk were also compared by assessing degrees of protein denaturation in raw and sterilized milk (raw milk being sterilized by ohmic heating or conventional heating)...

  1. A thermal transport coefficient for ohmic and ICRF plasmas in alcator C-mode

    International Nuclear Information System (INIS)

    Daughton, W.; Coppi, B.; Greenwald, M.

    1996-01-01

    The energy confinement in plasmas produced by Alcator C-Mod machine is markedly different from that observed by previous high field compact machines such as Alcator A and C, FT, and more recently FTU. For ohmic plasmas at low and moderate densities, the confinement times routinely exceed those expected from the so-called open-quotes neo-Alcatorclose quotes scaling by a factor as high as three. For both ohmic and ICRF heated plasmas, the energy confinement time increases with the current and is approximately independent of the density. The similarity in the confinement between the ohmic and ICRF regimes opens the possibility that the thermal transport in Alcator C-Mod may be described by one transport coefficient for both regimes. We introduce a modified form of a transport coefficient previously used to describe ohmic plasmas in Alcator C-Mod. The coefficient is inspired by the properties of the so-called open-quotes ubiquitousclose quotes mode that can be excited in the presence of a significant fraction of trapped electrons and also includes the constraint of profile consistency. A detailed series of transport simulations are used to show that the proposed coefficient can reproduce the observed temperature profiles, loop voltage and energy confinement time for both ohmic and ICRF discharges. A total of nearly two dozen ohmic and ICRF Alcator C-Mod discharges have been fit over the range of parameter space available using this transport coefficient

  2. Density limit in FTU tokamak during Ohmic operation

    International Nuclear Information System (INIS)

    Frigione, D.; Pieroni, L.

    1993-01-01

    The understanding of the physical mechanisms that regulate the density limit in a Tokamak is very important in view of a future fusion reactor. On one hand density enters as a factor in the figure of merit needed to achieve a burning plasma, and on the other hand a high edge density is a prerequisite for avoiding excessive erosion of the first walls and to limit the impurity influx into the hot plasma core. Furthermore a reactor should work in a safe zone of the operation parameters in order to avoid disruptive instabilities. The density limit problem has been tackled since the 70's, but so far a unique physics picture has not still emerged. In the last few years, due to the availability of better diagnostics, especially for the plasma edge, the use of pellet injectors to fuel the plasma and the experience gained on many different Tokamak, a consensus has been reached on the edge density as the real parameter responsible for the density limit. There are still two main mechanisms invoked to explain this limit: one refers to the power balance between the heat conducted and/or convected across the plasma radius and the power lost by impurity line radiation at the edge. When the latter overcomes the former, shrinking of the current channel occurs, which leads to instabilities due to tearing modes (usually the m/n=2/1) and then to disruption. The other explanation, for now valid for divertor machines, is based on the particle and energy balance in the scrape off layer (SOL). The limit in the edge density is then associated with the thermal collapse of the divertor plasma. In this work we describe the experiments on the density limit in FTU with Ohmic heating, the reason why we also believe that the limit is on the edge density, and discuss its relation to a simple model based on the SOL power balance valid for a limiter Tokamak. (author) 7 refs., 4 figs

  3. Energy confinement in Ohmic H-mode in TUMAN-3M

    International Nuclear Information System (INIS)

    Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Lebedev, S.V.; Levin, L.S.; Tukachinsky, A.S.

    1997-01-01

    The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. In 1994 new vacuum vessel had been installed in TUMAN-3 tokamak. The vessel has the same sizes as old one (R 0 =0.55 m, a 1 =0.24 m). New vessel was designed to reduce mechanical stresses in the walls during B T ramp phase of a shot. Therefore modified device - TUMAN-3M is able to produce higher B T and I p , up to 2 T and 0.2 MA respectively. During first experimental run device was operated in Ohmic Regime. In these experiments the possibility to achieve Ohmic H-mode was studied. The study of the parametric dependencies of the energy confinement time in both OH and Ohmic H-mode was performed. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Energy confinement time in TUMAN-3/TUMAN-3M Ohmic H-mode has revealed good agreement with JET/DIII-D/ASDEX scaling for ELM-free H-mode, resulting in very long τ E at the high plasma current discharges. (author)

  4. A variational master equation approach to quantum dynamics with off-diagonal coupling in a sub-Ohmic environment

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Ke-Wei [School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Fujihashi, Yuta; Ishizaki, Akihito [Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); Zhao, Yang, E-mail: YZhao@ntu.edu.sg [Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2016-05-28

    A master equation approach based on an optimized polaron transformation is adopted for dynamics simulation with simultaneous diagonal and off-diagonal spin-boson coupling. Two types of bath spectral density functions are considered, the Ohmic and the sub-Ohmic. The off-diagonal coupling leads asymptotically to a thermal equilibrium with a nonzero population difference P{sub z}(t → ∞) ≠ 0, which implies localization of the system, and it also plays a role in restraining coherent dynamics for the sub-Ohmic case. Since the new method can extend to the stronger coupling regime, we can investigate the coherent-incoherent transition in the sub-Ohmic environment. Relevant phase diagrams are obtained for different temperatures. It is found that the sub-Ohmic environment allows coherent dynamics at a higher temperature than the Ohmic environment.

  5. Effects of nanoscale coatings on reliability of MEMS ohmic contact switches

    Science.gov (United States)

    Tremper, Amber Leigh

    also increases the dependence on force. This thesis also details that the relative contribution of contact resistance to the total measured resistance can be maximized by decreasing the probe spacing and tip radius. AFM testing of the layered systems showed that the coated samples had larger predicted plane strain moduli than the Au sample, in contrast to the nanoindentation testing. Thus, when the contact depth was kept sufficiently small, the contact stiffness increased as predicted by substrate models. When the contact depth was on the order of the coating thickness, the contact stiffness actually decreased. Additionally, the forceseparation plots showed that the Ru and Pt surfaces either accumulated large amounts of contamination or were less susceptible to being wiped clean than the Au film. Further, scratch testing of the Au film and Ru and Pt coatings show that the hard surface coatings reduce material removal and contact wear. Ultra-thin Ru and Pt surface coatings on Au films are shown to be improved material systems for ohmic contact switches. The wear is reduced for coated materials, while the resistance and power consumption through the coating are not significantly affected.

  6. Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

    Science.gov (United States)

    Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

    2004-05-01

    In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

  7. Effects of combined gate and ohmic recess on GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Sunil Kumar

    2016-09-01

    Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

  8. Effect of ohmic heating processing conditions on color stability of fungal pigments.

    Science.gov (United States)

    Aguilar-Machado, Diederich; Morales-Oyervides, Lourdes; Contreras-Esquivel, Juan C; Aguilar, Cristóbal; Méndez-Zavala, Alejandro; Raso, Javier; Montañez, Julio

    2017-06-01

    The aim of this work was to analyze the effect of ohmic heating processing conditions on the color stability of a red pigment extract produced by Penicillium purpurogenum GH2 suspended in a buffer solution (pH 6) and in a beverage model system (pH 4). Color stability of pigmented extract was evaluated in the range of 60-90 ℃. The degradation pattern of pigments was well described by the first-order (fractional conversion) and Bigelow model. Degradation rate constants ranged between 0.009 and 0.088 min -1 in systems evaluated. Significant differences in the rate constant values of the ohmic heating-treated samples in comparison with conventional thermal treatment suggested a possible effect of the oscillating electric field generated during ohmic heating. The thermodynamic analysis also indicated differences in the color degradation mechanism during ohmic heating specifically when the pigment was suspended in the beverage model system. In general, red pigments produced by P. purpurogenum GH2 presented good thermal stability under the range of the evaluated experimental conditions, showing potential future applications in pasteurized food matrices using ohmic heating treatment.

  9. Apple snack enriched with L-arginine using vacuum impregnation/ohmic heating technology.

    Science.gov (United States)

    Moreno, Jorge; Echeverria, Julian; Silva, Andrea; Escudero, Andrea; Petzold, Guillermo; Mella, Karla; Escudero, Carlos

    2017-07-01

    Modern life has created a high demand for functional food, and in this context, emerging technologies such as vacuum impregnation and ohmic heating have been applied to generate functional foods. The aim of this research was to enrich the content of the semi-essential amino acid L-arginine in apple cubes using vacuum impregnation, conventional heating, and ohmic heating. Additionally, combined vacuum impregnation/conventional heating and vacuum impregnation/ohmic heating treatments were evaluated. The above treatments were applied at 30, 40 and 50  ℃ and combined with air-drying at 40 ℃ in order to obtain an apple snack rich in L-arginine. Both the impregnation kinetics of L-arginine and sample color were evaluated. The impregnated samples created using vacuum impregnation/ohmic heating at 50 ℃ presented a high content of L-arginine, an effect attributed primarily to electropermeabilization. Overall, vacuum impregnation/ohmic heating treatment at 50 ℃, followed by drying at 40 ℃, was the best process for obtaining an apple snack rich in L-arginine.

  10. Analysis of the ion energy transport in ohmic discharges in the ASDEX tokamak

    International Nuclear Information System (INIS)

    Simmet, E.E.; Fahrbach, H.U.; Herrmann, W.; Stroth, U.

    1996-10-01

    An analysis of the local ion energy transport is performed for more than one hundred well documented ohmic ASDEX discharges. These are characterized by three different confinement regimes: the linear ohmic confinement (LOC), the saturated ohmic confinement (SOC) and the improved ohmic confinement (IOC). All three are covered by this study. To identify the most important local transport mechanism of the ion heat, the ion power balance equation is analyzed. Two methods are used: straightforward calculation with experimental data only, and a comparison of measured and calculated profiles of the ion temperature and the ion heat conductivity, respectively. A discussion of the power balance shows that conductive losses dominate the ion energy transport in all ohmic discharges of ASDEX. Only inside the q=1-surface losses due to sawtooth activity play a role, while at the edge convective fluxes and CX-losses influence the ion energy transport. Both methods lead to the result that both the ion temperature and the ion heat conductivity are consistent with predictions of the neoclassical theory. Enhanced heat losses as suggested by theories eg. on the basis of η i modes can be excluded. (orig.)

  11. Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

    Directory of Open Access Journals (Sweden)

    Ye Tian

    2012-03-01

    Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

  12. An investigation on the application of ohmic heating of cold water shrimp and brine mixtures

    DEFF Research Database (Denmark)

    Pedersen, Søren Juhl; Feyissa, Aberham Hailu; Brøkner Kavli, Sissel Therese

    2016-01-01

    Cooking is an important unit-operation in the production of cooked and peeled shrimps. The present study explores the feasibility of using ohmic heating for cooking of shrimps. The focus is on investigating the effects of different process parameters on heating time and quality of ohmic cooked...... shrimps (Pandalus Borelias). The shrimps were heated to a core temperature of 72 °C in a brine solution using a small batch ohmic heater. Three experiments were performed: 1) a comparative analyses of the temperature development between different sizes of shrimps and thickness (head and tail region...... of the shrimp) over varying salt concentrations (10 kg m−3 to 20 kg m−3) and electric field strengths (1150 V m−1 to 1725 V m−1) with the heating time as the response; 2) a 2 level factorial experiment for screening the impact of processing conditions using electric field strengths of 1250 V m−1 and 1580 V m−1...

  13. Minimization of Ohmic Losses for Domain Wall Motion in a Ferromagnetic Nanowire

    Science.gov (United States)

    Tretiakov, O. A.; Liu, Y.; Abanov, Ar.

    2010-11-01

    We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic.

  14. Minimization of Ohmic losses for domain wall motion in ferromagnetic nanowires

    Science.gov (United States)

    Abanov, Artem; Tretiakov, Oleg; Liu, Yang

    2011-03-01

    We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain wall velocity we find the time-dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic. This work was supported by the NSF Grant No. 0757992 and Welch Foundation (A-1678).

  15. Remarks on the thermal stability of an Ohmic-heated nanowire

    Science.gov (United States)

    Timsit, Roland S.

    2018-05-01

    The rise in temperature of a wire made from specific materials, due to ohmic heating by a DC electrical current, may lead to uncontrollable thermal runaway with ensuing melting. Thermal runaway stems from a steep decrease with increasing temperature of the thermal conductivity of the conducting material and subsequent trapping of the ohmic heat in the wire, i.e., from the inability of the wire to dissipate the heat sufficiently quickly by conduction to the cooler ends of the wire. In this paper, we show that the theory used to evaluate the temperature of contacting surfaces in a bulk electrical contact may be applied to calculate the conditions for thermal runaway in a nanowire. Implications of this effect for electrical contacts are addressed. A possible implication for memory devices using ohmic-heated nanofilms or nanowires is also discussed.

  16. Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

    Science.gov (United States)

    Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

    2018-04-01

    Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

  17. Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

    2016-07-25

    Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

  18. Modelling of Ohmic discharges in ADITYA tokamak using the Tokamak Simulation Code

    International Nuclear Information System (INIS)

    Bandyopadhyay, I; Ahmed, S M; Atrey, P K; Bhatt, S B; Bhattacharya, R; Chaudhury, M B; Deshpande, S P; Gupta, C N; Jha, R; Joisa, Y Shankar; Kumar, Vinay; Manchanda, R; Raju, D; Rao, C V S; Vasu, P

    2004-01-01

    Several Ohmic discharges of the ADITYA tokamak are simulated using the Tokamak Simulation Code (TSC), similar to that done earlier for the TFTR tokamak. Unlike TFTR, the dominant radiation process in ADITYA is through impurity line radiation. TSC can follow the experimental plasma current and position to very good accuracy. The thermal transport model of TSC including impurity line radiation gives a good match of the simulated results with experimental data for the Ohmic flux consumption, electron temperature and Z eff . Even the simulated magnetic probe signals are in reasonably good agreement with the experimental values

  19. Modelling of Ohmic discharges in ADITYA tokamak using the Tokamak Simulation Code

    Energy Technology Data Exchange (ETDEWEB)

    Bandyopadhyay, I; Ahmed, S M; Atrey, P K; Bhatt, S B; Bhattacharya, R; Chaudhury, M B; Deshpande, S P; Gupta, C N; Jha, R; Joisa, Y Shankar; Kumar, Vinay; Manchanda, R; Raju, D; Rao, C V S; Vasu, P [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2004-09-01

    Several Ohmic discharges of the ADITYA tokamak are simulated using the Tokamak Simulation Code (TSC), similar to that done earlier for the TFTR tokamak. Unlike TFTR, the dominant radiation process in ADITYA is through impurity line radiation. TSC can follow the experimental plasma current and position to very good accuracy. The thermal transport model of TSC including impurity line radiation gives a good match of the simulated results with experimental data for the Ohmic flux consumption, electron temperature and Z{sub eff}. Even the simulated magnetic probe signals are in reasonably good agreement with the experimental values.

  20. Confinement requirements for OHMIC-compressive ignition of a Spheromak plasma

    International Nuclear Information System (INIS)

    Olson, R.; Gilligan, J.; Miley, G.

    1980-01-01

    The Moving Plasmoid Reactor (MPR) is an attractive alternative magnetic fusion scheme in which Spheromak plasmoids are envisioned to be formed, compressed, burned, and expanded as the plasmoids translate through a series of linear reactor modules. Although auxiliary heating of the plasmoids may be possible, the MPR scenario would be especially interesting if ohmic decay and compression along were sufficient to heat the plasmoids to an ignition temperature. In the present work, we will study the transport conditions under which a Spheromak plasmoid could be expected to reach ignition via a combination of ohmic and compression heating

  1. Confinement requirements for ohmic-compressive ignition of a Spheromak plasma

    International Nuclear Information System (INIS)

    Olson, R.E.; Miley, G.H.

    1981-01-01

    The Moving Plasmoid Reactor (MPR) is an attractive alternative magnetic fusion scheme in which Spheromak plasmoids are envisioned to be formed, compressed, burned, and expanded as the plasmoids translate through a series of linear reactor modules. Although auxiliary heating of the plasmoids may be possible, the MPR scenario would be especially interesting if ohmic decay and compression alone is sufficient to heat the plasmoids to an ignition temperature. In the present work, we examine the transport conditions under which a Spheromak plasmoid can be expected to reach ignition via a combination of ohmic and compression heating

  2. Pasteurization of citrus juices with ohmic heating to preserve the carotenoid profile

    OpenAIRE

    Achir , Nawel; Dhuique-Mayer , Claudie; Hadjal , Thiziri; Madani , Khodir; Pain , Jean-Pierre; Dornier , Manuel

    2016-01-01

    International audience; This study was carried out to assess, for the first time, the effect of ohmic heating on the carotenoid profile of two citrus fruit juices: grapefruit and blood orange. Two heat treatments were designed to obtain pasteurization values of 50 and 150 min (Tref= 70°C and z-value=10°C) with ohmic heating as compared to conventional heating. The results showed that xanthophyll losses could reach 70% for epoxyxanthophylls (cis-violaxanthin and cis-antheraxanthin) and 40% for...

  3. Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

    International Nuclear Information System (INIS)

    Redondo-Cubero, A; Alves, L C; Corregidor, V; Vázquez, L; Romero, M F; Muñoz, E; Pantellini, A; Lanzieri, C

    2014-01-01

    The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and scanning electron microscopy, shows a transition from a fractal network of rough and complex island-like structures towards smoother and cauliflower-like fronts with increasing d. Rutherford backscattering spectrometry and energy dispersive x-ray spectroscopy (EDXS) at different energies were used to confirm the in-depth intermixing of the metals relevant for the final contact resistance. EDXS mapping reveals a significant lateral segregation too, where the resulting patterns depend on two competing NiAl x and AuAl x phases, the intermixing being controlled by the available amount of Al. The optimum ohmic resistance is not affected by the patterning process, but is mainly dependent on the partial interdiffusion of the metals. (paper)

  4. Ohmic Contacts for Technology for Frequency Agile Digitally Synthesized Transmitters

    National Research Council Canada - National Science Library

    Mohney, Suzanne E

    2007-01-01

    ... bipolar transistors to smaller sizes. For p-type InAs, the combination of modest contact resistance and good thermal stability at 250 0 C was achieved with metallizations that had thin Pd layers deposited first, fol lowed by W or Ti/Pt...

  5. Destruction of Bacillus cereus spores in a thick soy bean paste (doenjang) by continuous ohmic heating with five sequential electrodes.

    Science.gov (United States)

    Ryang, J H; Kim, N H; Lee, B S; Kim, C T; Rhee, M S

    2016-07-01

    This study selected spores from Bacillus cereus FSP-2 strain (the isolate from a commercial doenjang processing line) as the test strain which showed significantly higher thermal resistance (P 1·5 National Bureau of Standards units), treatment at 105°C for 60 s was selected and applied on a large scale (500 kg of product). Reliable and reproducible destruction of B. cereus spores occurred; the reductions achieved (to < 4 log CFU g(-1) ) met the Korean national standards. Scanning electron microscopy revealed microstructural alterations in the spores (shrinkage and a distorted outer spore coat). OH is an effective method for destroying B. cereus spores to ensure the microbiological quality and safety of a thick, highly viscous sauce. This study shows that an ohmic heating (OH) using a five sequential electrode system can effectively destroy highly heat-resistant Bacillus cereus spores which have been frequently found in a commercial doenjang processing line without perceivable quality change in the product. In addition, it may demonstrate high potential of the unique OH system used in this study that will further contribute to ensure microbiological quality and safety of crude sauces containing high levels of electrolyte other than doenjang as well. © 2016 The Society for Applied Microbiology.

  6. Reducing the acidity of Arabica coffee beans by ohmic fermentation technology

    Directory of Open Access Journals (Sweden)

    Reta

    2017-07-01

    Full Text Available Coffee is widely consumed not only because of its typical taste, but coffee has antioxidant properties because of its polygons, and it stimulates brain performance. The main problem with the consumption of coffee is its content of caffeine. Caffeine when consumed in excess, can increase muscle tension, stimulate the heart, and increase the secretion of gastric acid. In this research, we applied ohmic fermentation technology, which is specially designed to mimic the stomach. Arabica coffee has high acidity that needs to be reduced than Luwak coffee, although it is cheaper. Hence, the ohmic technology with a time and temperature variation were applied to measure the total acidity of the coffee to determine optimum fermentation conditions. Results revealed that the total acidity of the coffee varied with fermentation conditions (0.18% – 0.73%. Generally, the longer the fermentation and the higher the temperature, the lower the total acidity. The acidity of the Luwak coffee through natural fermentation was 2.34%, which is substantially higher than the total acidity from the ohmic samples. Ohmic-based fermentation technology, therefore, offers improvements in coffee quality.

  7. Effect of ohmic heating of soymilk on urease inactivation and kinetic analysis in holding time.

    Science.gov (United States)

    Li, Fa-De; Chen, Chen; Ren, Jie; Wang, Ranran; Wu, Peng

    2015-02-01

    To verify the effect of the ohmic heating on the urease activity in the soymilk, the ohmic heating methods with the different electrical field conditions (the frequency and the voltage ranging from 50 to 10 kHz and from 160 to 220 V, respectively) were employed. The results showed that if the value of the urease activity measured with the quantitative spectrophotometry method was lower than 16.8 IU, the urease activity measured with the qualitative method was negative. The urease activity of the sample ohmically heated was significantly lower than that of the sample conventionally heated (P urease inactivation. In addition, the inactivation kinetics of the urease in the soymilk could be described with a biphasic model during holding time at a target temperature. Thus, it was concluded that the urease in the soymilk would contain 2 isoenzymes, one is the thermolabile fraction, the other the thermostable fraction, and that the thermostable isoenzyme could not be completely inactivated when the holding time increased, whether the soymilk was cooked with the conventional method or with the ohmic heating method. Therefore, the electric field had no effect on the inactivation of the thermostable isoenzyme of the urease. © 2015 Institute of Food Technologists®

  8. Internal transport barrier and β limit in ohmically heated plasma in TUMAN-3M

    International Nuclear Information System (INIS)

    Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.

    2001-01-01

    An Internal Transport Barrier (ITB) was found in ohmically heated plasma in TUMAN-3M (R 0 =53 cm, a l =22 cm - circular limiter configuration, B t ≤0.7T, I p ≤175 kA, ≤6.0·10 19 m -3 ). The barrier reveals itself as a formation of a steep gradient on electron temperature and density radial profiles. The regions with reduced diffusion and electron thermal diffusivity are in between r=0.5a and r=0.7a. The ITB appears more frequently in the shots with higher plasma current. At lower currents (I p N limit in the ohmically heated plasma are presented. Stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with the fast Current Ramp-Down in the ohmic H-mode. Maximum value of β T of 2.0 % and β N of 2 were achieved. The β N limit achieved is 'soft' (nondisruptive) limit. The stored energy slowly decays after the Current Ramp-Down. No correlation was found between beta restriction and MHD phenomena. (author)

  9. Internal transport barrier and β limit in ohmically heated plasma in TUMAN-3M

    International Nuclear Information System (INIS)

    Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.

    1999-01-01

    An Internal Transport Barrier (ITB) was found in ohmically heated plasma in TUMAN-3M (R 0 = 53 cm, a l = 22 cm - circular limiter configuration, B t ≤ 0.7 T, I p ≤ 175 kA, ≤ 6.0·10 19 m -3 ). The barrier reveals itself as a formation of a steep gradient on electron temperature and density radial profiles. The regions with reduced diffusion and electron thermal diffusivity are in between r = 0.5a and r = 0.7a. The ITB appears more frequently in the shots with higher plasma current. At lower currents (I p N limit in the ohmically heated plasma are presented. Stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with the fast Current Ramp-Down in the ohmic H-mode. Maximum value of β T of 2.0% and β N of 2 were achieved. The β N limit achieved is 'soft' (non-disruptive) limit. The stored energy slowly decays after the Current Ramp-Down. No correlation was found between beta restriction and MHD phenomena. (author)

  10. Impurity toroidal rotation and transport in Alcator C-Mod ohmic high confinement mode plasmas

    International Nuclear Information System (INIS)

    Rice, J. E.; Goetz, J. A.; Granetz, R. S.; Greenwald, M. J.; Hubbard, A. E.; Hutchinson, I. H.; Marmar, E. S.; Mossessian, D.; Pedersen, T. Sunn; Snipes, J. A.

    2000-01-01

    Central toroidal rotation and impurity transport coefficients have been determined in Alcator C-Mod [I. H. Hutchinson et al., Phys. Plasmas 1, 1511 (1994)] Ohmic high confinement mode (H-mode) plasmas from observations of x-ray emission following impurity injection. Rotation velocities up to 3x10 4 m/sec in the co-current direction have been observed in the center of the best Ohmic H-mode plasmas. Purely ohmic H-mode plasmas display many characteristics similar to ion cyclotron range of frequencies (ICRF) heated H-mode plasmas, including the scaling of the rotation velocity with plasma parameters and the formation of edge pedestals in the electron density and temperature profiles. Very long impurity confinement times (∼1 sec) are seen in edge localized mode-free (ELM-free) Ohmic H-modes and the inward impurity convection velocity profile has been determined to be close to the calculated neoclassical profile. (c) 2000 American Institute of Physics

  11. On the evaluation of currents in a tokamak plasma during combined Ohmic and RF current drive

    International Nuclear Information System (INIS)

    Eckhartt, D.

    1986-09-01

    By taking into account the rf-generated enhancement of the plasma electric conductivity (as formulated by Fisch in the limit of weak dc electric fields) a relation is derived between the ratio of rf to Ohmically driven currents and other plasma parameters to be measured before and after the rf onset under the condition of constant net plasma current. (author)

  12. A new method for the compensation of ohmic drop in galvanic cells

    NARCIS (Netherlands)

    Kooijman, D.J.; Sluyters, J.H.

    Generally the ohmic potential drop in a galvanic cell that occurs if a rectangular pulse is led through the cell, is compensated by means of a well-known bridge circuit. A better method making use of a phase reverter is described and its features are discussed. Exchange current densities up to 1200

  13. Low ohmic multilayer contacts in lead-tin-telluride diode lasers

    International Nuclear Information System (INIS)

    Herrmann, K.; Sumpf, B.; Boehme, D.; Hannemann, M.

    1983-01-01

    The preparation and the influence of low ohmic multilayer thin film contacts of lead-salt homo- and heterolasers on the degradation of lasing parameters during recycling processes between low working temperatures and room temperatures storage are described and discussed in detail. (author)

  14. Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw; Yang, Cheng-Yi [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Lee, Fang-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsin-Chu 300, Taiwan (China); Huang, Hao-Ping [Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan (China)

    2015-10-21

    This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

  15. Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

    Science.gov (United States)

    MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

    2012-11-27

    We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

  16. Determination of the Resistance of Cone-Shaped Solid Electrodes

    DEFF Research Database (Denmark)

    Frandsen, Henrik Lund; Hendriksen, Peter Vang; Koch, Søren

    2017-01-01

    during processing can be avoided. Newman's formula for current constriction in the electrolyte is then used to deduce the active contact area based on the ohmic resistance of the cell, and from this the surface specific electro-catalytic activity. However, for electrode materials with low electrical......A cone-shaped electrode pressed into an electrolyte can with advantage be utilized to characterize the electro-catalytic properties of the electrode, because it is less dependent on the electrode microstructure than e.g. thin porous composite electrodes, and reactions with the electrolyte occurring...... conductivity (like Ce1-xPrxO2-δ), the resistance of the cell is significantly influenced by the ohmic resistance of the cone electrode, wherefore it must be included. In this work the ohmic resistance of a cone is modelled analytically based on simplified geometries. The two analytical models only differ...

  17. Ohmic heating of the reversed-field pinch

    International Nuclear Information System (INIS)

    Gerwin, R.

    1980-04-01

    Simple analytic expressions are found for the global heating rate and the time needed to achieve global power balance with radiation and other losses, in useful agreement with large RFP transport codes. A simple condition is noted, which insures that the heating can be accomplished before appreciable resistive evolution occurs in the pinch profile. The product of poloidal beta, β/sub theta/, and toroidal current, I, that characterizes a condition of global power balance is derived subject to the above-mentioned condition without making key assumptions used by earlier investigators. First, a perfectly steady state (with local power balance) is not assumed, nor is it appropriate to do so. Secondly, the cross-field resistivity is not required to be classical. Since the value of (β/sub theta/ I) plays a fundamental role in determining the kind of device one requires, the foundations of this value are important

  18. Contact metallurgy optimization for ohmic contacts to InP

    DEFF Research Database (Denmark)

    Clausen, Thomas; Pedersen, Arne Skyggebjerg; Leistiko, Otto

    1991-01-01

    AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowe...

  19. Global properties of ohmically heated reversed-field pinches

    International Nuclear Information System (INIS)

    Gerwin, R.A.

    The simultaneous requirements of power balance and pressure balance have been considered. The treatment generalizes the Pease-Braginskii pinch current limit by including toroidal magnetic field, anomalous resistivity, nonradiative losses, and time-dependent fields. The rise of the temperature to a state of power balance proves to be amenable to a very simple and unified description. Finally, the practical parameter windows implied by the joint action of power balance and pressure balance are displayed

  20. Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation

    International Nuclear Information System (INIS)

    Liliental-Weber, Z.; Gronsky, R.; Washburn, J.; Newman, N.; Spicer, W.E.; Weber, E.R.

    1986-01-01

    We report here a systematic study which uses electrical device measurements and transmission electron microscopy (TEM) methods to investigate the electrical, morphological, and structural properties of Au/GaAs Schottky diodes. The electrical characteristics of Au diodes formed on atomically clean and air-exposed GaAs(110) surfaces are found to change from rectifying to Ohmic behavior after annealing above the Au--Ga eutectic temperature (360 0 C). This change is shown to be due to an Ohmic-like contact at the periphery of the device. TEM studies of these structures indicate that the Ohmic peripheral current pathway can be correlated with the formation of near surface Ga-rich Au crystallites at the diode circumference upon annealing. Further evidence of the correlation of the Ohmic electrical characteristics with the morphology of the periphery comes from data which indicate that the removal of these Au crystallites by mesa etching is also accompanied with the elimination of the Ohmic current. The morphology of the overlayer was found to depend strongly on annealing and surface treatment. TEM indicates that the interface is flat and abrupt for all unannealed diodes, as well as for annealed diodes formed on atomically clean surfaces. For annealed diodes formed on the air-exposed surfaces, the metal--semiconductor interface contains large metallic protrusions extending up to several hundred angstroms into the semiconductor. For comparison to practical structures, the morphology of annealed diodes formed using typical commercial processing technology [i.e., formed on chemically prepared (100) surfaces annealed in forming gas] was also investigated using TEM. The interface for these structures is more complex than interfaces formed on the atomically clean and air-exposed cleaved (110) surfaces

  1. The ohmic resistance effect for characterisation of carbon nanotube paste electrodes (CNTPEs)

    Czech Academy of Sciences Publication Activity Database

    Mikysek, T.; Stočes, M.; Švancara, I.; Ludvík, Jiří

    2012-01-01

    Roč. 2, č. 9 (2012), s. 3684-3690 ISSN 2046-2069 R&D Projects: GA MŠk LC510 Institutional research plan: CEZ:AV0Z40400503 Keywords : voltammetry * nanotubes * paste electrodes Subject RIV: CG - Electrochemistry Impact factor: 2.562, year: 2012

  2. Detection of inhomogeneities in membrane ohmic resistance in geometrically complex systems

    DEFF Research Database (Denmark)

    Svirskis, G; Hounsgaard, J; Gutman, A

    2000-01-01

    DC field-evoked transients in arbitrarily shaped neurons and syncytia were analyzed theoretically. In systems with homogeneous passive membrane properties, the transients develop much faster than the membrane discharges. Conductance of the proximal membrane could be larger due to the injury impos...

  3. The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

    Science.gov (United States)

    Oh, Min-Suk

    2018-04-01

    We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

  4. Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures.

    Science.gov (United States)

    Zheng, Changxi; Zhang, Qianhui; Weber, Bent; Ilatikhameneh, Hesameddin; Chen, Fan; Sahasrabudhe, Harshad; Rahman, Rajib; Li, Shiqiang; Chen, Zhen; Hellerstedt, Jack; Zhang, Yupeng; Duan, Wen Hui; Bao, Qiaoliang; Fuhrer, Michael S

    2017-03-28

    Large-area two-dimensional (2D) heterojunctions are promising building blocks of 2D circuits. Understanding their intriguing electrostatics is pivotal but largely hindered by the lack of direct observations. Here graphene-WS 2 heterojunctions are prepared over large areas using a seedless ambient-pressure chemical vapor deposition technique. Kelvin probe force microscopy, photoluminescence spectroscopy, and scanning tunneling microscopy characterize the doping in graphene-WS 2 heterojunctions as-grown on sapphire and transferred to SiO 2 with and without thermal annealing. Both p-n and n-n junctions are observed, and a flat-band condition (zero Schottky barrier height) is found for lightly n-doped WS 2 , promising low-resistance ohmic contacts. This indicates a more favorable band alignment for graphene-WS 2 than has been predicted, likely explaining the low barriers observed in transport experiments on similar heterojunctions. Electrostatic modeling demonstrates that the large depletion width of the graphene-WS 2 junction reflects the electrostatics of the one-dimensional junction between two-dimensional materials.

  5. Dynamics of the sub-Ohmic spin-boson model: A time-dependent variational study

    International Nuclear Information System (INIS)

    Wu Ning; Duan Liwei; Zhao Yang; Li Xin

    2013-01-01

    The Dirac-Frenkel time-dependent variation is employed to probe the dynamics of the zero temperature sub-Ohmic spin-boson model with strong friction utilizing the Davydov D 1 ansatz. It is shown that initial conditions of the phonon bath have considerable influence on the dynamics. Counterintuitively, even in the very strong coupling regime, quantum coherence features still manage to survive under the polarized bath initial condition, while such features are absent under the factorized bath initial condition. In addition, a coherent-incoherent transition is found at a critical coupling strength α≈ 0.1 for s= 0.25 under the factorized bath initial condition. We quantify how faithfully our ansatz follows the Schrödinger equation, finding that the time-dependent variational approach is robust for strong dissipation and deep sub-Ohmic baths (s≪ 1).

  6. Graphene in ohmic contact for both n-GaN and p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  7. Sawtooth-free Ohmic discharges in ASDEX and the aspects of neoclassical ion transport

    International Nuclear Information System (INIS)

    Stroth, U.; Fussmann, G.; Krieger, K.; Mertens, V.; Wagner, F.; Bessenrodt-Weberpals, M.; Buechse, R.; Giannone, L.; Herrmann, H.; Simmet, E.; Steuer, K.H.

    1991-05-01

    Sawtooth-free Ohmic discharges can serve as a model case for a quiescent Tokamak plasma. We report on the properties and the global parameters of these discharges observed in ASDEX and make comments on the mechanism which seems to be responsible for the stabilization of the sawtooth instability. Stationary Ohmic discharge were used to investigate particle, impurity and energy transport in the absence of the sawtooth instability. Particular emphasis has been devoted to a comparison with the predictions of neoclassical theories. We find that the ion energy transport is on the level predicted by neoclassical theory and can explain particle and impurity transport with neoclassical inward drift velocities and diffusion coefficients with the same small anomalous contribution. In the central region of the plasma, where the power flux is low, very small values were found for the electron heat conductivity. (orig.)

  8. Investigation of the Energy Confinement in Ohmic and LHCD Plasmas in HT-7

    International Nuclear Information System (INIS)

    Zhang Xiaoqing; Wan Baonian; Shen Biao; Hu Xiwei; Qian Jinping; Fan Hengyu; Ding Yonghua

    2006-01-01

    Investigation of the energy confinement in ohmic and lower hybrid current drive (LHCD) plasmas in HT-7 has been performed. In ohmic discharges at low densities the global energy confinement time τ E increases almost linearly with the density, saturates at a critical density (2.5 x 10 13 /cm 3 for HT-7) and is nearly constant at higher densities. The energy confinement time is in good agreement with the Neo-Alcator scaling law at different densities and currents. In the LHCD plasmas the global energy confinement time similar to that of the L-mode discharges has been observed to be in good agreement with the low confinement mode (L mode) scaling law of ITER89-P in higher electron density and plasma current

  9. Real-time protection of the Ohmic heating coil force limits in DIII-D

    International Nuclear Information System (INIS)

    Broesch, J.D.; Scoville, J.T.; Hyatt, A.W.; Coon, R.M.

    1997-11-01

    The maximum safe operating limits of the DIII-D tokamak are determined by the force produced in the ohmic heating coil and the toroidal field coil during a plasma pulse. This force is directly proportional to the product of the current in the coils. Historically, the current limits for each coil were set statically before each pulse without regard for the time varying nature of the currents. In order to allow the full time-dependent capability of the ohmic coil to be used, a system was developed for monitoring the product of the currents dynamically and making appropriate adjustments in real time. This paper discusses the purpose, implementation, and results of this work

  10. Observations of core toroidal rotation reversals in Alcator C-Mod ohmic L-mode plasmas

    International Nuclear Information System (INIS)

    Rice, J.E.; Reinke, M.L.; Podpaly, Y.A.; Churchill, R.M.; Cziegler, I.; Dominguez, A.; Ennever, P.C.; Fiore, C.L.; Granetz, R.S.; Greenwald, M.J.; Hubbard, A.E.; Hughes, J.W.; Irby, J.H.; Ma, Y.; Marmar, E.S.; McDermott, R.M.; Porkolab, M.; Duval, B.P.; Bortolon, A.; Diamond, P.H.

    2011-01-01

    Direction reversals of intrinsic toroidal rotation have been observed in Alcator C-Mod ohmic L-mode plasmas following modest electron density or toroidal magnetic field ramps. The reversal process occurs in the plasma interior, inside of the q = 3/2 surface. For low density plasmas, the rotation is in the co-current direction, and can reverse to the counter-current direction following an increase in the electron density above a certain threshold. Reversals from the co- to counter-current direction are correlated with a sharp decrease in density fluctuations with k R ≥ 2 cm -1 and with frequencies above 70 kHz. The density at which the rotation reverses increases linearly with plasma current, and decreases with increasing magnetic field. There is a strong correlation between the reversal density and the density at which the global ohmic L-mode energy confinement changes from the linear to the saturated regime.

  11. Information of Zeff from the sawtooth-performances in the center of ohmic tokamak discharges

    International Nuclear Information System (INIS)

    Eberhagen, A.

    1987-09-01

    Achievement of information on the mean effective ion charge in the center of ohmic tokamak discharges from sawtooth-relaxations of the plasma is considered. This method is found to supply trustworthy results for usual tokamak parameters. While its application requires some effort in data analysis, it can provide a valuable determination of Z eff -data, independent of the information from bremsstrahlung radiation losses of the plasma. (orig.)

  12. Reducing the acidity of Arabica coffee beans by ohmic fermentation technology

    OpenAIRE

    Reta; Mursalim; Salengke; Junaedi, M.; Mariati; Sopade, P.

    2017-01-01

    Coffee is widely consumed not only because of its typical taste, but coffee has antioxidant properties because of its polygons, and it stimulates brain performance. The main problem with the consumption of coffee is its content of caffeine. Caffeine when consumed in excess, can increase muscle tension, stimulate the heart, and increase the secretion of gastric acid. In this research, we applied ohmic fermentation technology, which is specially designed to mimic the stomach. Arabica coffee has...

  13. Ohmically heated toroidal experiment (OHTE) mobile ignition test reactor facility concept study

    International Nuclear Information System (INIS)

    Masson, L.S.; Watts, K.D.; Piscitella, R.R.; Sekot, J.P.; Drexler, R.L.

    1983-02-01

    This report presents the results of a study to evaluate the use of an existing nuclear test complex at the Idaho National Engineering Laboratory (INEL) for the assembly, testing, and remote maintenance of the ohmically heated toroidal experiment (OHTE) compact reactor. The portable reactor concept is described and its application to OHTE testing and maintenance requirements is developed. Pertinent INEL facilities are described and several test system configurations that apply to these facilities are developed and evaluated

  14. Laser-annealed GaP OHMIC contacts for high-temperature devices

    International Nuclear Information System (INIS)

    Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

    1980-01-01

    The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

  15. Ohmic ion temperature and thermal diffusivity profiles from the JET neutron emission profile monitor

    Energy Technology Data Exchange (ETDEWEB)

    Esposito, B. (ENEA, Frascati (Italy). Centro Ricerche Energia); Marcus, F.B.; Conroy, S.; Jarvis, O.N.; Loughlin, M.J.; Sadler, G.; Belle, P. van (Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking); Adams, J.M.; Watkins, N. (AEA Industrial Technology, Harwell (United Kingdom))

    1993-10-01

    The JET neutron emission profile monitor was used to study ohmically heated deuterium discharges. The radial profile of the neutron emissivity is deduced from the line-integral data. The profiles of ion temperature, T[sub i], and ion thermal diffusivity, [chi][sub i], are derived under steady-state conditions. The ion thermal diffusivity is higher than, and its scaling with plasma current opposite to, that predicted by neoclassical theory. (author).

  16. Ohmic ion temperature and thermal diffusivity profiles from the JET neutron emission profile monitor

    International Nuclear Information System (INIS)

    Esposito, B.

    1993-01-01

    The JET neutron emission profile monitor was used to study ohmically heated deuterium discharges. The radial profile of the neutron emissivity is deduced from the line-integral data. The profiles of ion temperature, T i , and ion thermal diffusivity, χ i , are derived under steady-state conditions. The ion thermal diffusivity is higher than, and its scaling with plasma current opposite to, that predicted by neoclassical theory. (author)

  17. Space chamber experiments of ohmic heating by high power microwave from the solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Kaya, N.; Matsumoto, H.

    1981-12-01

    It is quantitatively predicted that a high power microwave from the Solar Power Satellite (SPS) nonlinearly interacts with the ionospheric plasma. The possible nonlinear interactions are ohmic heating, self-focusing and parametric instabilities. A rocket experiment called MINIX (Microwave-Ionosphere Nonlinear Interaction Experiment) has been attempted to examine these effects, but is note reported here. In parallel to the rocket experiment, a laboratory experiment in a space plasma simulation chamber has been carried out in order to examine ohmic heating in detail and to develop a system of the rocket experiment. Interesting results were observed and these results were utilized to revise the system of the rocket experiments. A significant microwave heating of plasma up to 150% temperature increase was observed with little electron density decrease. It was shown that the temperature increase is not due to the RF breakdown but to the ohmic heating in the simulated ionospheric plasma. These microwave effects have to be taken into account in the SPS Project in the future.

  18. Transport analysis of ohmic, L-mode and improved confinement discharges in FTU

    Energy Technology Data Exchange (ETDEWEB)

    Esposito, B [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Marinucci, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Romanelli, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Bracco, G [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Castaldo, C [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Cocilovo, V [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Giovannozzi, E [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Leigheb, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Monari, G [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Nowak, S [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Sozzi, C [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Tudisco, O [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Cesario, R [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Frigione, D [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Gormezano, C [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Granucci, G [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Panaccione, L [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Pericoli-Ridolfini, V [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Pieroni, L [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy)

    2004-11-01

    A thorough investigation of confinement in Frascati Tokamak Upgrade has been carried out on a new database of ohmic, L-mode and advanced scenario discharges (multiple pellet-fuelled, radiation improved and internal transport barriers (ITBs)) obtained with the available auxiliary heating systems, namely electron cyclotron resonant heating, lower hybrid and ion Bernstein wave. A general agreement of the measured {tau}{sub E} with ITER97 L-mode scaling is found in ohmic and L-mode discharges. An improvement of the energy confinement time ({tau}{sub E}) of up to about 60% over the ITER97 L-mode scaling has been obtained in ITB discharges, together with a reduction in local electron transport in the region of high pressure gradient, and up to about 30% in pellet-fuelled discharges (where {tau}{sub E} as large as {approx}120 ms have been reached). The linear density dependence of {tau}{sub E} in ohmic discharges has been found to extend above the saturation density threshold in pellet-fuelled plasmas.

  19. Mathematical model of solid food pasteurization by ohmic heating: influence of process parameters.

    Science.gov (United States)

    Marra, Francesco

    2014-01-01

    Pasteurization of a solid food undergoing ohmic heating has been analysed by means of a mathematical model, involving the simultaneous solution of Laplace's equation, which describes the distribution of electrical potential within a food, the heat transfer equation, using a source term involving the displacement of electrical potential, the kinetics of inactivation of microorganisms likely to be contaminating the product. In the model, thermophysical and electrical properties as function of temperature are used. Previous works have shown the occurrence of heat loss from food products to the external environment during ohmic heating. The current model predicts that, when temperature gradients are established in the proximity of the outer ohmic cell surface, more cold areas are present at junctions of electrodes with lateral sample surface. For these reasons, colder external shells are the critical areas to be monitored, instead of internal points (typically geometrical center) as in classical pure conductive heat transfer. Analysis is carried out in order to understand the influence of pasteurisation process parameters on this temperature distribution. A successful model helps to improve understanding of these processing phenomenon, which in turn will help to reduce the magnitude of the temperature differential within the product and ultimately provide a more uniformly pasteurized product.

  20. Bias induced transition from an ohmic to a non-ohmic interface in supramolecular tunneling junctions with Ga2O3/EGaIn top electrodes.

    Science.gov (United States)

    Wimbush, Kim S; Fratila, Raluca M; Wang, Dandan; Qi, Dongchen; Liang, Cao; Yuan, Li; Yakovlev, Nikolai; Loh, Kian Ping; Reinhoudt, David N; Velders, Aldrik H; Nijhuis, Christian A

    2014-10-07

    This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ∼2.0 nm changed the nature of the monolayer-top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.

  1. Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Carey, Patrick H. [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Yang, Jiancheng [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Ren, Fan [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Hays, David C. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Pearton, Stephen J. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Kuramata, Akito [Tamura Corporation, Sayama (Japan). Japan and Novel Crystal Technology, Inc.; Kravchenko, Ivan I. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

    2017-10-03

    In this work, the use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10-5 Ω cm2 were achieved after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

  2. MHD-activity in ohmic, diverted and limited H-mode plasmas in TCV

    International Nuclear Information System (INIS)

    Pochelon, A.; Anton, M.; Buehlmann, F.; Dutch, M.J.; Duval, B.P.; Hirt, A.; Hofmann, F.; Joye, B.; Lister, J.B.; Llobet, X.; Martin, Y.; Moret, J.M.; Nieswand, C.; Pietrzyk, A.Z.; Tonetti, G.; Weisen, H.

    1994-01-01

    During its first year of operation the TCV tokamak has produced a variety of plasma configurations with currents in the range 150 to 800 kA and elongations in the range of 1.0 to 2.05. Ohmic H-modes have been obtained in diverted discharges and discharges limited on the graphite tiles inner wall. After boronisation in May 1994 H-modes with line average densities up to 1.7x10 20 m -3 , corresponding to a Murakami parameter of 10, were obtained. (author) 5 figs., 2 refs

  3. Design of constant current charging power supply for J-TEXT ohmic field capacitor banks

    International Nuclear Information System (INIS)

    Lv Shudong; Zhang Ming; Rao Bo; Yu Kexun; Yang Cheng

    2014-01-01

    The charging characteristic of the capacitor charging power supply was analyzed with practical series resonant topology. The method that setting two current taps and regulating PWM switching frequency was putted forward with close loop controlling algorithm to charge the multi-group capacitor banks with constant current. A capacitor charging power supply with the max output current 6.5 A and the max output voltage 2000 V is designed. Experimental results show that, this power supply can charge the four capacitor banks to any four different voltages in 1 minute with charging accuracy less than 1%, and meet the requirements of J-TEXT ohmic field power system. (authors)

  4. Transient snakes in an ohmic plasma associated with a minor disruption in the HT-7 Tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Mao, Songtao; Xu, Liqing; Hu, Liqun; Chen, Kaiyun [Chinese Academy of Sciences, Hefei (China)

    2014-05-15

    A transient burst (∼2 ms, an order of the fast-particle slowdown timescale) of a spontaneous snake is observed for the first time in a HT-7 heavy impurity ohmic plasma. The features of the low-Z impurity snake are presented. The flatten electron profile due to the heavy impurity reveals the formation of a large magnetic island. The foot of the impurity accumulation is consistent with the location of the transient snake. The strong frequency-chirping behaviors and the spatial structures of the snake are also presented.

  5. Effect of morphology on the non-ohmic conduction in ZnO nanostructures

    Science.gov (United States)

    Praveen, E.; Jayakumar, K.

    2016-05-01

    Nanostructures of ZnO is synthesized with nanoflower like morphology by simple wet chemical method. The structural, morphological and electrical characterization have been carried out. The temperature dependent electrical characterization of ZnO pellets of thickness 1150 µm is made by the application of 925MPa pressure. The morphological dependence of non-ohmic conduction beyond some arbitrary tunneling potential and grain boundary barrier thickness is compared with the commercially available bulk ZnO. Our results show the suitability of nano-flower like ZnO for the devices like sensors, rectifiers etc.

  6. Density fluctuations in ohmic-, L-mode an H-mode discharges of ASDEX

    Energy Technology Data Exchange (ETDEWEB)

    Dodel, G; Holzhauer, E [Stuttgart Univ. (Germany). Inst. fuer Plasmaforschung; Niedermeyer, H; Endler, M; Gerhardt, J; Giannone, L.; Wagner, F; Zohm, H [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany)

    1991-01-01

    The 119 [mu]m laser scattering device ASDEX was used to investigate the direction of propagation and temporal development of density fluctuations. In ohmic discharges the density fluctuations propagate predominantly in the electron-diamagnetic direction and change direction with NI co-injection. A strong drop in total scattered power together with a further increase in the frequency shift is observed after the build-up of the transport barrier. Similar observations have been reported on other tokamaks. Due to the finite spatial resolution of the scattering system the variation of the fluctuations with local parameters cannot be sufficiently resolved to confirm their nature. (author) 5 refs., 3 figs.

  7. Density fluctuations in ohmic-, L-mode an H-mode discharges of ASDEX

    International Nuclear Information System (INIS)

    Dodel, G.; Holzhauer, E.

    1991-01-01

    The 119 μm laser scattering device ASDEX was used to investigate the direction of propagation and temporal development of density fluctuations. In ohmic discharges the density fluctuations propagate predominantly in the electron-diamagnetic direction and change direction with NI co-injection. A strong drop in total scattered power together with a further increase in the frequency shift is observed after the build-up of the transport barrier. Similar observations have been reported on other tokamaks. Due to the finite spatial resolution of the scattering system the variation of the fluctuations with local parameters cannot be sufficiently resolved to confirm their nature. (author) 5 refs., 3 figs

  8. Backscattering analysis of AuGe-Ni ohmic contacts of n-GaAs

    International Nuclear Information System (INIS)

    Nassibian, A.G.; Kalkur, T.S.; Sutherland, G.J.; Cohen, D.

    1985-01-01

    AuGe-Ni is widely used for the fabrication of ohmic contacts to n-GaAs. The alloying behaviour of evaporated AuGe-Ni alloyed by furnace and Scanning Electron Beam, is characterised by Rutherford backscattering with 2MeV 4 He ions. Since the formation of alloyed AuGe-Ni contacts involves redistribution and diffusion of Ga, As, Ni, Ge and Au, it is difficult to separate the corresponding yields due to gold, Ga As, Ni and Ge in the spectrum. The technique used in the investigation involves assumption of depth distribution of elements and computing the resultant spectrum

  9. Hydrogen and deuterium pellet injection into ohmically and additionally ECR-heated TFR plasmas

    International Nuclear Information System (INIS)

    Drawin, H.W.

    1987-01-01

    The ablation clouds of hydrogen and deuterium pellets injected into ohmically and electron cyclotron resonance heated (ECRH) plasmas of the Fontenay-aux-Roses tokamak TFR have been photographed, their emission has been measured photoelectrically. Without ECRH the pellets penetrate deeply into the plasma, the clouds are striated. Injection during ECRH leads to ablation in the outer plasma region. The position of the ECR layer has no influence on the penetration depth which is only a few centimeters. The ablation clouds show no particular structure when ECRH is applied

  10. Ti(r) profiles from the JET neutron profile monitor for ohmic discharges

    Energy Technology Data Exchange (ETDEWEB)

    Esposito, B. (ENEA, Frascati (Italy). Centro Ricerche Energia); Marcus, F.B.; Conroy, S.; Jarvis, O.N.; Loughlin, M.J.; Sadler, G.; Belle, P. van (Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking); Adams, J.M.; Watkins, N. (AEA Industrial Technology, Harwell (United Kingdom))

    1991-01-01

    A study has been made of the neutron emissivity, using the JET neutron profile monitor, obtained for ohmically heated deuterium discharges. Both one-dimensional (1-D) best-fit inversion procedures and 2-D tomography have been used to deduce the radial profile of the neutron emission from the line-integral data. The profiles of ion temperature and ion thermal conductivity are then derived. The scaling of the ion thermal conductivity with plasma current is found to be opposite to that of neoclassical theory. (author) 4 refs., 5 figs.

  11. Ohmic Treatment of Pear Purées (cv. ‘Conference’ in Terms of Some Quality Related Attributes

    Directory of Open Access Journals (Sweden)

    Oana Viorela NISTOR

    2015-06-01

    Full Text Available The effect of ohmic treatment on some quality related characteristics of pear purée (cv. ‘Conference’ such as color, reducing sugars, total phenols, rheological behavior and microbial counts, was analyzed. The inactivation kinetics of pectin methyl esterase (PME in pear crude extract and purée were studied by conventional thermal and ohmic treatments. Thermal inactivation of PME in crude extract was described by a first-order kinetic model. The activation energy values suggested the presence of two isoenzymes with different thermostability. The ohmic heating reduced PME activity by 96% at 25 V·cm-1. Minimal changes induced by ohmic heating on above quality related aspects were observed. Supporting this statement, there were no significant changes in the nutritional and sensorial attributes. It was reported an increase of 3% of reducing sugar content for the ohmic heated samples. The phenolic content of the treated samples registered a reduction of 59% in comparison with fresh pear purée. The pear purée presented a non-Newtonian pseudoplastic behaviour. The Ostwald de Waele model was fitted to rheograms and the consistency coefficient (m and flow behavior index (n were determined. Results obtained for the microbial charge were higher in the control samples. Thus, microbial counts showed complete inactivation of yeast and mold at voltage gradient higher than 17.5 V·cm-1.

  12. Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

    International Nuclear Information System (INIS)

    Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

    2013-01-01

    Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

  13. INCORPORATING AMBIPOLAR AND OHMIC DIFFUSION IN THE AMR MHD CODE RAMSES

    International Nuclear Information System (INIS)

    Masson, J.; Mulet-Marquis, C.; Chabrier, G.; Teyssier, R.; Hennebelle, P.

    2012-01-01

    We have implemented non-ideal magnetohydrodynamics (MHD) effects in the adaptive mesh refinement code RAMSES, namely, ambipolar diffusion and Ohmic dissipation, as additional source terms in the ideal MHD equations. We describe in details how we have discretized these terms using the adaptive Cartesian mesh, and how the time step is diminished with respect to the ideal case, in order to perform a stable time integration. We have performed a large suite of test runs, featuring the Barenblatt diffusion test, the Ohmic diffusion test, the C-shock test, and the Alfvén wave test. For the latter, we have performed a careful truncation error analysis to estimate the magnitude of the numerical diffusion induced by our Godunov scheme, allowing us to estimate the spatial resolution that is required to address non-ideal MHD effects reliably. We show that our scheme is second-order accurate, and is therefore ideally suited to study non-ideal MHD effects in the context of star formation and molecular cloud dynamics.

  14. The particle fluxes in the edge plasma during discharges with improved ohmic confinement in ASDEX

    International Nuclear Information System (INIS)

    Verbeek, H.; Poschenrieder, W.; Fu, J.K.; Soeldner, F.X.

    1989-01-01

    In the recent experimental period of ASDEX a new regime of improved ohmic confinement (IOC) was discovered. So far the energy confinement time τ E increased linearly with increasing line averaged density n e up to n e = 3·10 13 cm -3 saturated, however, at higher densities. In the new IOC regime τ E increases further with increasing n e up to ∼5·10 13 cm -3 . The IOC regime is achieved for D 2 discharges only since the last modification of the ASDEX divertor which substantially increased the recycling from the divertor through the divertor slits. It also led to a reduction in gas consumption for a discharge by a factor of about 2. As it appears, the high fuelling rate required during a fast ramp-up of the plasma density leads to a transition into the Saturated Ohmic Confinememt (SOC) regime. Vice versa, the strong reduction in the external gas feed when the preprogrammed density plateau is reached seems to be essential for establishing the IOC. It is characterized by a pronounced peaking of the density profile. During the transition from the SOC to the IOC regime large variations in the signals of all edge and divertor related diagnostics are observed. In this paper we concentrate on the results of the Low Energy Neutral Particle Analyser (LENA), the sniffer probe, on the mass spectrometers measuring the divertor exhaust pressure. (author) 7 refs., 2 figs

  15. Ohmic heating coil power supply using thyristor circuit breaker in a thermonuclear fusion device

    International Nuclear Information System (INIS)

    Tani, Keiji; Shimada, Ryuichi; Tamura, Sanae; Yabuno, Kohei; Koseki, Shoichiro.

    1982-01-01

    In a large scale Tokamak thermonuclear fusion device such as the critical plasma testing facility (JT60) presently under construction, mechanical breakers such as vacuum and air breakers are mostly used for interrupting DC heavy current which is supplied to the ohmic heating coils of inductive energy accumulation method. The practical use of the DC breakers employing thyristors has just been started because the history of thyristor development is short and thristors are still expensive, in spite of the advantages. In this paper, the circuit is investigated in which the excellent high speed controllability of thyristors is fully utilized, while the economy is taken into accout, and the experiment carried out with a unit model is described. It was found that a thyristor switch, which was constructed by connecting the high speed thyristors of peak off-state voltage rating 2,000 V and mean current rating 500 A in direct parallel, was able to interrupt 12.7 kA current in the power supply circuit of ohmic heating coils developed this time. In addition, the switch configuration was able to be greatly simplified. When the multistage raising of plasma current is required, the raise can be performed with a single thyristor breaker because it can make high speed control. Therefore, the capacity of the breaker can be doubly and drastically reduced. Also, if current unbalance might occur between thyristor switch units, it gives no problem since the time of reverse voltage after current interruption dispersed smaller as current increased. (Wakatsuki, Y.)

  16. Effect of indirect ohmic heating on quality of ready-to-eat pineapple packed in plastic pouch

    Directory of Open Access Journals (Sweden)

    Hoang Pham

    2014-06-01

    Full Text Available Ready-to-eat fruits packed in sealed containers are highly perishable due to their intrinsic characteristics and lack of full thermal process. Ohmic heating has the advantages of rapid liquid heating through electrical current. The aim of this research was to investigate the effect of indirect ohmic heating on pH, total soluble solids, polyphenol oxidase activity, color and texture of ready-to-eat pineapple packed in a polypropylene pouch with 1% calcium chloride and 0.3% ascorbic acid packing solution. The pre-packed sample in a pouch was placed in the ohmic heating jar filled with 0.5% sodium chloride ohmic heating solution which was then ohmic heated at different voltage gradients (20, 30, 40 V/cm, to different packing solution temperatures (60, 70, 80°C for 60s. Samples were kept at 4°C for quality measurement. It was found that browning index of ready-to-eat pineapple treated with 20 V/cm at 80°C, 30 V/cm at 70°C and 80°C, 40 V/cm at 80°C did not change during 12 days cold storage (p>0.05. Polyphenol oxidase was inactivated when the temperature of the pineapple was 62°C or higher. After 10 days at 4°C, the pineapple heated with 30 V/cm at 70°C had much higher firmness than the un-heated sample kept at the same storage condition. Indirect ohmic heating of pre-packed ready-to-eat pineapple in polypropylene pouch with 30 V/cm at 70°C packing solution temperature for 60s could be used as minimal heating methods to maintain the quality of ready-to-eat fruits in 12 days at 4°C.

  17. Kinetics of Maillard reactions in model infant formula during UHT treatment using a static batch ohmic heater

    OpenAIRE

    Roux , Stéphanie; Courel , Mathilde; Ait-Ameur , Lamia; Birlouez-Aragon , Inès; Pain , Jean-Pierre

    2009-01-01

    The impact of a UHT treatment on a model infant formula was examined by assessing the advancement of Maillard reactions during a thermal treatment by ohmic heating. The heating and holding steps of the heat treatment were carried out in a static batch ohmic heater equipped with a nitrogen counter-pressure system, allowing reaching five temperature levels from 100 to 140 °C. A heat treatment was characterized by monitoring a holding time at a given temperature. Samples were taken during heatin...

  18. Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

    Science.gov (United States)

    Hou, Minmin; Senesky, Debbie G.

    2014-08-01

    The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10-5 Ω-cm2. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.

  19. D III-D divertor target heat flux measurements during Ohmic and neutral beam heating

    International Nuclear Information System (INIS)

    Hill, D.N.; Petrie, T.; Mahdavi, M.A.; Lao, L.; Howl, W.

    1988-01-01

    Time resolved power deposition profiles on the D III-D divertor target plates have been measured for Ohmic and neutral beam injection heated plasmas using fast response infrared thermography (τ ≤ 150 μs). Giant Edge Localized Modes have been observed which punctuate quiescent periods of good H-mode confinement and deposit more than 5% of the stored energy of the core plasma on the divertor armour tiles on millisecond time-scales. The heat pulse associated with these events arrives approximately 0.5 ms earlier on the outer leg of the divertor relative to the inner leg. The measured power deposition profiles are displaced relative to the separatrix intercepts on the target plates, and the peak heat fluxes are a function of core plasma density. (author). Letter-to-the-editor. 11 refs, 7 figs

  20. Conceptual designs of 50 kA 20 MJ superconducting ohmic heating coils

    International Nuclear Information System (INIS)

    Singh, S.K.; Murphy, J.H.; Janocko, M.A.; Haller, H.E.; Litz, D.C.; Eckels, P.W.; Rogers, J.D.; Thullen, P.

    1979-01-01

    Two designs of 20 Mj superconducting coils are described which were developed to demonstrate the feasibility of an ohmic heating system. NbTi and Nb;sub 3;Sn superconductors were considered for both 7 tesla and 9 tesla maximum fields. Cabled and braided conductors were investigated and the braided conductor is identified as the best alternative due to its high operating current densities and because of its porosity. The coils are designed to be cryostable for bipolar operation from +7 tesla to -7 tesla and from +9 tesla to -9 tesla maximum fields within 1 sec. The structural design addresses the distribution of structure and structural materials used in the pulsed field environment. Immersion cooled (pool boil) and forced flow cooled coils are described. 2 refs

  1. Fokker-Planck equation of the reduced Wigner function associated to an Ohmic quantum Langevin dynamics

    Science.gov (United States)

    Colmenares, Pedro J.

    2018-05-01

    This article has to do with the derivation and solution of the Fokker-Planck equation associated to the momentum-integrated Wigner function of a particle subjected to a harmonic external field in contact with an ohmic thermal bath of quantum harmonic oscillators. The strategy employed is a simplified version of the phenomenological approach of Schramm, Jung, and Grabert of interpreting the operators as c numbers to derive the quantum master equation arising from a twofold transformation of the Wigner function of the entire phase space. The statistical properties of the random noise comes from the integral functional theory of Grabert, Schramm, and Ingold. By means of a single Wigner transformation, a simpler equation than that mentioned before is found. The Wigner function reproduces the known results of the classical limit. This allowed us to rewrite the underdamped classical Langevin equation as a first-order stochastic differential equation with time-dependent drift and diffusion terms.

  2. Evolution of the electron temperature profile of ohmically heated plasmas in TFTR

    International Nuclear Information System (INIS)

    Taylor, G.; Efthimion, P.C.; Arunasalam, V.

    1985-08-01

    Blackbody electron cyclotron emission was used to ascertain and study the evolution and behavior of the electron temperature profile in ohmically heated plasmas in the Tokamak Fusion Test Reactor (TFTR). The emission was measured with absolutely calibrated millimeter wavelength radiometers. The temperature profile normalized to the central temperature and minor radius is observed to broaden substantially with decreasing limiter safety factor q/sub a/, and is insensitive to the plasma minor radius. Sawtooth activity was seen in the core of most TFTR discharges and appeared to be associated with a flattening of the electron temperature profile within the plasma core where q less than or equal to 1. Two types of sawtooth behavior were identified in large TFTR plasmas (minor radius, a less than or equal to 0.8 m) : a typically 35 to 40 msec period ''normal'' sawtooth, and a ''compound'' sawtooth with 70 to 80 msec period

  3. Magnetic Shear and Transport in ECRH Discharges of the TJ-II under Ohmic Induction

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Bruna, D.; Castejon, F.; Romero, J. A.; Estrada, T.; Medina, F.; Ochando, M.; Lopez-Fraguas, A.; Ascasibar, E.; Herranz, J.; Sanchez, E.; Luna, E. de la; Pastor, I.

    2006-07-01

    TJ-II is ha heliac type stellarator characterised by high, but almost constant, vacuum rotational transform throughout the confining volume. In ECRH plasmas, moderate induced ohmic currents (negligible heating and modification of the magnetic field nodules) are enough to disregard the bootstrap contribution, which allows us performing a fair calculation of the evolution of the rotational transform. We use the loop voltage diagnostic to estimate the plasma electrical conductivity. Then the evolution of the rotational transform and shear is related to changes in the profiles of electron and thermal diffusivities: negative shear correlates with decreasing diffusivities in the region of steepest density gradient; transport increases toward zero shear but the achieved positive values are too small to draw conclusions. The radial sweeping of lowest order rational magnetic surfaces does not determine the observed trends in transport. (Author)43 refs.

  4. A 1.5 MJ cryostatic stable superconducting ohmic-heating coil

    International Nuclear Information System (INIS)

    Wang, S.-T.; Kim, S.H.; Praeg, W.F.; Krieger, C.I.

    1978-01-01

    As early as FY 1975, ANL had recognized the clear advantage of a superconducting ohmic-heating (OH) coil and proposed a five-year pulsed coil and power supply development program to ERDA. With modest funding made available by ERDA in FY 1977 and the use of substantial equipment inventory at ANL, a small but agressive development program was advanced to the construction of a 1.5 MJ model coil. The principle objective in building the 1.5 MJ ac coil is to demonstrate ac cryostability of a large coil with a dB/dt ranging from 2 T/s up to 14 T/s. The results of basic cable development and tests will be described. The design and construction of a prototype 1.5 MJ cryostable pulsed coil and its nonmetallic cryostat will be presented. (author)

  5. Magnetic Shear and Transport in ECRH Discharges of the TJ-II under Ohmic Induction

    International Nuclear Information System (INIS)

    Lopez-Bruna, D.; Castejon, F.; Romero, J. A.; Estrada, T.; Medina, F.; Ochando, M.; Lopez-Fraguas, A.; Ascasibar, E.; Herranz, J.; Sanchez, E.; Luna, E. de la; Pastor, I.

    2006-01-01

    TJ-II is ha heliac type stellarator characterised by high, but almost constant, vacuum rotational transform throughout the confining volume. In ECRH plasmas, moderate induced ohmic currents (negligible heating and modification of the magnetic field nodules) are enough to disregard the bootstrap contribution, which allows us performing a fair calculation of the evolution of the rotational transform. We use the loop voltage diagnostic to estimate the plasma electrical conductivity. Then the evolution of the rotational transform and shear is related to changes in the profiles of electron and thermal diffusivities: negative shear correlates with decreasing diffusivities in the region of steepest density gradient; transport increases toward zero shear but the achieved positive values are too small to draw conclusions. The radial sweeping of lowest order rational magnetic surfaces does not determine the observed trends in transport. (Author)43 refs

  6. Influence of infrared final cooking on color, texture and cooking characteristics of ohmically pre-cooked meatball.

    Science.gov (United States)

    Yildiz Turp, Gulen; Icier, Filiz; Kor, Gamze

    2016-04-01

    The objective of the current study was to improve the quality characteristics of ohmically pre-cooked beef meatballs via infrared cooking as a final stage. Samples were pre-cooked in a specially designed-continuous type ohmic cooker at a voltage gradient of 15.26 V/cm for 92 s. Infrared cooking was then applied to the pre-cooked samples at different combinations of heat fluxes (3.706, 5.678, and 8.475 kW/m(2)), application distances (10.5, 13.5, and 16.5 cm) and application durations (4, 8, and 12min). Effects of these parameters on color, texture and cooking characteristics of ohmically pre-cooked beef meatballs were investigated. The appearance of ohmically pre-cooked meatball samples was improved via infrared heating. A dark brown layer desired in cooked meatballs formed on the surface of the meatballs with lowest application distance (10.5 cm) and longest application duration (12 min). The texture of the samples was also improved with these parameters. However the cooking yield of the samples decreased at the longest application duration of infrared heating. Copyright © 2015 Elsevier Ltd. All rights reserved.

  7. Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Jeong-Hun; Jung, Hyun-Wook [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-14

    In this paper, Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64 is presented, which is formed at 500 °C by inserting IGZO between metal (Ni) and GaSb. The resulting Ohmic contact is systematically investigated by TOF-SIMS, HSC chemistry simulation, XPS, TEM, AFM, and J–V measurements. Two main factors contributing to the Ohmic contact formation are (1) InSb (or InGaSb) with narrow energy bandgap (providing low electron and hole barrier heights) formed by In diffusion from IGZO and Sb released by Ga oxidation, and (2) free Sb working as traps that induces tunneling current. - Highlights: • We demonstrate Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64. • The reverse current is increased by low electron barrier height and high TAT current. • The low electron barrier height is achieved by the formation of InGaSb. • Free Sb atoms also work as traps inducing high TAT current.

  8. Design of a multistage 250 kJ capacitor bank for ohmic transformer of tokamak ''ADITYA''

    International Nuclear Information System (INIS)

    Sathyanarayana, K.; Saxena, Y.C.; John, P.I.; Pujara, H.D.; Jain, K.K.

    1993-01-01

    Tokamaks require toroidal loop voltage for breakdown of the neutral gas, current rise, and the flat top phase. The temporal profile of the loop voltage established by the change of flux linked by the ohmic transformer has to be a noncosine waveform. In this paper a multistage capacitor bank is described which was used to energize the ohmic transformer in tokamak ADITYA with a major radius of 0.75 m, minor radius of 0.25 m, and a toroidal field of 1.5 T at the plasma center. A combination of capacitors charged to different voltages are switched in at appropriate times, to realize an experimental demand for initial high loop voltage followed by a lower sustaining loop voltage. Theoretical prediction for the duration of the secondary loop voltage as a function of circuit parameters, for a fast bank operation of 6 kV, slow bank, 4--4.5 kV, and slow bank, 2--2.5 kV yield t 0 =1.25 mS, t 1 =4.95 mS, and t 2 =24.1 mS. These values are in close agreement to the measured values of t 0 =1.39 mS, t 1 =5.7 mS, and t 2 =23.7 mS. The trigger delays to the various capacitor bank sections are parameter dependent. To avoid repetitive adjustments in the delays, a novel scheme for consistent triggering is also highlighted

  9. Bayesian Analysis of Hot-Jupiter Radius Anomalies: Evidence for Ohmic Dissipation?

    Science.gov (United States)

    Thorngren, Daniel P.; Fortney, Jonathan J.

    2018-05-01

    The cause of hot-Jupiter radius inflation, where giant planets with {T}eq} > 1000 K are significantly larger than expected, is an open question and the subject of many proposed explanations. Many of these hypotheses postulate an additional anomalous power that heats planets’ convective interiors, leading to larger radii. Rather than examine these proposed models individually, we determine what anomalous powers are needed to explain the observed population’s radii, and consider which models are most consistent with this. We examine 281 giant planets with well-determined masses and radii and apply thermal evolution and Bayesian statistical models to infer the anomalous power as a fraction of (and varying with) incident flux ɛ(F) that best reproduces the observed radii. First, we observe that the inflation of planets below about M = 0.5 M J appears very different than their higher-mass counterparts, perhaps as the result of mass loss or an inefficient heating mechanism. As such, we exclude planets below this threshold. Next, we show with strong significance that ɛ(F) increases with {T}eq} toward a maximum of ∼2.5% at T eq ≈ 1500 K, and then decreases as temperatures increase further, falling to ∼0.2% at T eff = 2500 K. This high-flux decrease in inflation efficiency was predicted by the Ohmic dissipation model of giant planet inflation but not other models. We also show that the thermal tides model predicts far more variance in radii than is observed. Thus, our results provide evidence for the Ohmic dissipation model and a functional form for ɛ(F) that any future theories of hot-Jupiter radii can be tested against.

  10. Measurement of the drift velocities of electrons and holes in high-ohmic silicon

    International Nuclear Information System (INIS)

    Scharf, Christian

    2014-02-01

    Measurements of the drift velocities of electrons and holes as a function of the electric field and the temperature in high-ohmic silicon of crystal orientation are presented. Significant differences between our results and literature values are observed. A new parametrization of the mobility is introduced. Current transients of n-type pad diodes, generated by fast laser pulses, were investigated in order to determine the drift velocity of electrons and holes separately. Two diodes of high-ohmic silicon (1.5 kΩcm and 5.5 kΩcm) from different manufacturers were investigated as cross check. The drift velocities were determined at electric fields ranging from 5 kV/cm to 50 kV/cm at temperatures ranging from 233 K to 333 K. The mobility parameters were obtained by fitting a simulation of charge drift in silicon to the measurements. Using the convolution theorem the response function of the read-out circuit was determined with the Fourier transforms of the measurement and the simulation. The simulated transient current pulses with the new mobility parametrization are consistent with the measured ones for the temperature and electric field range investigated here. Additionally, the mobility results from the fit are consistent with the mobility determined using the simpler time-of-flight method in the field range where this method is applicable. However, our measurements show a difference of up to 14 % to the values by Canali et al. (1971). The difference to the mobility parametrization by Jacoboni et al. (1977) is up to 24 % while this parametrization is widely used for simulations of the direction due to the lack of data for silicon.

  11. Initial Thomson Scattering Survey of Local Helicity Injection and Ohmic Plasmas at the Pegasus Toroidal Experiment

    Science.gov (United States)

    Schlossberg, D. J.; Bodner, G. M.; Bongard, M. W.; Fonck, R. J.; Winz, G. R.

    2014-10-01

    A multipoint Thomson scattering diagnostic has recently been installed on the Pegasus ST. The system utilizes a frequency-doubled Nd:YAG laser (λ0 ~ 532 nm), spectrometers with volume phase holographic gratings, and a gated, intensified CCD camera. It provides measurements of Te and ne at 8 spatial locations for each spectrometer once per discharge. A new multiple aperture and beam dump system has been implemented to mitigate interference from stray light. This system has provided initial measurements in the core region of plasmas initiated by local helicity injection (LHI), as well as conventional Ohmic L- and H-mode discharges. Multi-shot averages of low-density (ne ~ 3 ×1018 m-3) , Ip ~ 0 . 1 MA LHI discharges show central Te ~ 75 eV at the end of the helicity injection phase. Ip ~ 0 . 13 MA Ohmic plasmas at moderate densities (ne ~ 2 ×1019 m-3) have core Te ~ 150 eV in L-mode. Generally, these plasmas do not reach transport equilibrium in the short 25 ms pulse length available. After an L-H transition, strong spectral broadening indicates increasing Te, to values above the range of the present spectrometer system with a high-dispersion VPH grating. Near-term system upgrades will focus on deploying a second spectrometer, with a lower-dispersion grating capable of measuring the 0.1-1.0 keV range. The second spectrometer system will also increase the available number of spatial channels, enabling study of H-mode pedestal structure. Work supported by US DOE Grant DE-FG02-96ER54375.

  12. Quantitative comparison of electron temperature fluctuations to nonlinear gyrokinetic simulations in C-Mod Ohmic L-mode discharges

    Energy Technology Data Exchange (ETDEWEB)

    Sung, C., E-mail: csung@physics.ucla.edu [University of California, Los Angeles, Los Angeles, California 90095 (United States); White, A. E.; Greenwald, M.; Howard, N. T. [Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Mikkelsen, D. R.; Churchill, R. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Holland, C. [University of California, San Diego, La Jolla, California 92093 (United States); Theiler, C. [Ecole Polytechnique Fédérale de Lausanne, SPC, Lausanne 1015 (Switzerland)

    2016-04-15

    Long wavelength turbulent electron temperature fluctuations (k{sub y}ρ{sub s} < 0.3) are measured in the outer core region (r/a > 0.8) of Ohmic L-mode plasmas at Alcator C-Mod [E. S. Marmar et al., Nucl. Fusion 49, 104014 (2009)] with a correlation electron cyclotron emission diagnostic. The relative amplitude and frequency spectrum of the fluctuations are compared quantitatively with nonlinear gyrokinetic simulations using the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] in two different confinement regimes: linear Ohmic confinement (LOC) regime and saturated Ohmic confinement (SOC) regime. When comparing experiment with nonlinear simulations, it is found that local, electrostatic ion-scale simulations (k{sub y}ρ{sub s} ≲ 1.7) performed at r/a ∼ 0.85 reproduce the experimental ion heat flux levels, electron temperature fluctuation levels, and frequency spectra within experimental error bars. In contrast, the electron heat flux is robustly under-predicted and cannot be recovered by using scans of the simulation inputs within error bars or by using global simulations. If both the ion heat flux and the measured temperature fluctuations are attributed predominantly to long-wavelength turbulence, then under-prediction of electron heat flux strongly suggests that electron scale turbulence is important for transport in C-Mod Ohmic L-mode discharges. In addition, no evidence is found from linear or nonlinear simulations for a clear transition from trapped electron mode to ion temperature gradient turbulence across the LOC/SOC transition, and also there is no evidence in these Ohmic L-mode plasmas of the “Transport Shortfall” [C. Holland et al., Phys. Plasmas 16, 052301 (2009)].

  13. Noncontact sheet resistance measurement technique for wafer inspection

    Science.gov (United States)

    Kempa, Krzysztof; Rommel, J. Martin; Litovsky, Roman; Becla, Peter; Lojek, Bohumil; Bryson, Frank; Blake, Julian

    1995-12-01

    A new technique, MICROTHERM, has been developed for noncontact sheet resistance measurements of semiconductor wafers. It is based on the application of microwave energy to the wafer, and simultaneous detection of the infrared radiation resulting from ohmic heating. The pattern of the emitted radiation corresponds to the sheet resistance distribution across the wafer. This method is nondestructive, noncontact, and allows for measurements of very small areas (several square microns) of the wafer.

  14. Thermal degradation of ohmic contacts on semipolar (11-22) GaN films grown on m-plane (1-100) sapphire substrates

    International Nuclear Information System (INIS)

    Kim, Doo Soo; Kim, Deuk Young; Seo, Yong Gon; Kim, Ji Hoon; Hwang, Sung Min; Baik, Kwang Hyeon

    2012-01-01

    Semipolar (11-22) GaN films were grown on m-plane (1-100) sapphire substrates by using metalorganic chemical vapor deposition. The line widths of the omega rocking curves of the semipolar GaN films were 498 arcsec along the [11-23] GaN direction and 908 arcsec along the [10-10] GaN direction. The properties of the Ti/Al/Ni/Au metal contact were investigated using transmission-line-method patterns oriented in both the [11-23] GaN and the [10-10] GaN directions of semipolar (11-22) GaN. The minimum specific contact resistance of ∼3.6 x 10 -4 Ω·cm -2 was obtained on as-deposited metal contacts. The Ohmic contact properties of semipolar (11-22) GaN became degraded with increasing annealing temperature above 400 .deg. C. The thermal degradation of the metal contacts may be attributed to the surface property of N-polarity on the semipolar (11-22) GaN films. Also, the semipolar (11-22) GaN films did not show clear anisotropic behavior of the electrical properties for different azimuthal angles.

  15. Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor

    International Nuclear Information System (INIS)

    Chen, Li-Yang; Tsai, Tsung-Han; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng

    2008-01-01

    The reliability-related properties of an InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), using the non-annealed ohmic-recess (NAOR) approach, are studied and demonstrated. The NAOR device shows significantly improved dc and radio frequency (RF) performance over a wide temperature range (300–500 K). With a 1 × 100 µm 2 gate-dimension MHEMT by the NAOR approach, the considerably improved thermal stability and dc performances, including lower temperature variation coefficients on turn-on voltage (−1.38 mV K −1 ) and gate-drain breakdown voltage (−30.4 mV K −1 ), and on-resistance (2.41 × 10 −3 Ω mm K −1 ), are obtained as the temperature is increased from 300 to 500 K. For RF characteristics, the NAOR device also shows a low degradation rate on drain saturation current operating regimes (−5.52 × 10 −4 K −1 ) as the temperature is increased from 300 to 400 K. In addition, based on the lifetime tests, an activation energy of 1.33 eV and a projected median lifetime of 1.2 × 10 7 h at T ch = 125 °C are obtained for the NAOR MHEMT

  16. Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

    DEFF Research Database (Denmark)

    Boturchuk, Ievgen; Scheffler, Leopold Julian; Larsen, Arne Nylandsted

    2018-01-01

    Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing...... to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects...

  17. Enhancement of ohmic and stochastic heating by resonance effects in capacitive radio frequency discharges: a theoretical approach.

    Science.gov (United States)

    Mussenbrock, T; Brinkmann, R P; Lieberman, M A; Lichtenberg, A J; Kawamura, E

    2008-08-22

    In low-pressure capacitive radio frequency discharges, two mechanisms of electron heating are dominant: (i) Ohmic heating due to collisions of electrons with neutrals of the background gas and (ii) stochastic heating due to momentum transfer from the oscillating boundary sheath. In this work we show by means of a nonlinear global model that the self-excitation of the plasma series resonance which arises in asymmetric capacitive discharges due to nonlinear interaction of plasma bulk and sheath significantly affects both Ohmic heating and stochastic heating. We observe that the series resonance effect increases the dissipation by factors of 2-5. We conclude that the nonlinear plasma dynamics should be taken into account in order to describe quantitatively correct electron heating in asymmetric capacitive radio frequency discharges.

  18. Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

    International Nuclear Information System (INIS)

    Sinha, Nidhi; Ray, Geeta; Godara, Sanjay; Gupta, Manoj K.; Kumar, Binay

    2014-01-01

    Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm 2 ) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications

  19. Radiation, impurity effects, instability characteristics and transport in Ohmically heated plasmas in the PLT tokamak

    International Nuclear Information System (INIS)

    Bol, K.; Arunasalam, V.; Bitter, M.

    1979-01-01

    Titanium-gettered deuterium plasmas, with graphite or steel limiters to define the plasma minor radius, have Zsub(eff) approximately 1 for 3x10 13 14 cm -3 . In ungettered discharges the density limit set by disruptions is about half the value in gettered discharges. The bolometrically measured energy flux from the whole plasma volume is 80-100% of the Ohmic input power for ungettered discharges and 50-70% for gettered ones. The strucutre of MHD modes continues to be intensively studied by means of soft X-ray detector arrays; however, the connection with the disruptive instability remains unclear. Microinstabilities, studied by means of a 2-mm homodyne scattering system, appear to be of sufficient magnitude to influence energy and particle transport. Ion energy confinement times in the central region of the plasma have been estimated to be 50-100ms. Gross electron energy confinement time increases linearly with density at constant temperature. The longest electron energy confinement times observed are approximately >40ms in dense gettered discharges, giving total energy confinement times approximately 80ms. (author)

  20. Power deposition to the pump limiters in Tore-Supra with ohmic plasmas

    International Nuclear Information System (INIS)

    Guilhem, D.; Chatelier, M.; Chappuis Fleury, I.; Klepper, C.

    1990-01-01

    The modification of power scrape-off-length, λq, and power deposition are studied both with the horizontal limiter alone and with the full set of 7 pump limiters for 1MW ohmic plasmas in TORE-SUPRA. By making spatially resolved infrared surface temperature measurements during the plasma discharge, the magnitude and distribution of the energy flux can be derived. For comparison, the surface temperature of the horizontal pump limiter is calculated with a finite element code using a 3D description of the field lines, an exponential scrape-off-layer, and the pump limiter geometry. From comparison of the infrared images of the limiter we derived that the λq for power deposition was slightly less than 9 mm (±1mm) which is in agreement with the predicted design value of 10 mm. For an 8 seconds discharge, the maximum surface temperature on the horizontal limiter is 450 0 C. Inserting the 7 limiters does not modify λq (which becomes 10 mm). The power is shared by all the limiters and the maximum surface temperature on the horizontal limiter decreased to 320 0 C. These λq values have been independently measured by the integrated energy deposition on the horizontal limiter and other internal structures 5 cm into the scrape-off layer. These values agree with the infrared measurements in the two cases

  1. On the breakdown modes and parameter space of Ohmic Tokamak startup

    Science.gov (United States)

    Peng, Yanli; Jiang, Wei; Zhang, Ya; Hu, Xiwei; Zhuang, Ge; Innocenti, Maria; Lapenta, Giovanni

    2017-10-01

    Tokamak plasma has to be hot. The process of turning the initial dilute neutral hydrogen gas at room temperature into fully ionized plasma is called tokamak startup. Even with over 40 years of research, the parameter ranges for the successful startup still aren't determined by numerical simulations but by trial and errors. However, in recent years it has drawn much attention due to one of the challenges faced by ITER: the maximum electric field for startup can't exceed 0.3 V/m, which makes the parameter range for successful startup narrower. Besides, this physical mechanism is far from being understood either theoretically or numerically. In this work, we have simulated the plasma breakdown phase driven by pure Ohmic heating using a particle-in-cell/Monte Carlo code, with the aim of giving a predictive parameter range for most tokamaks, even for ITER. We have found three situations during the discharge, as a function of the initial parameters: no breakdown, breakdown and runaway. Moreover, breakdown delay and volt-second consumption under different initial conditions are evaluated. In addition, we have simulated breakdown on ITER and confirmed that when the electric field is 0.3 V/m, the optimal pre-filling pressure is 0.001 Pa, which is in good agreement with ITER's design.

  2. Study of internal transport barriers in the initial phase of Ohmic discharges in TUMAN-3M

    International Nuclear Information System (INIS)

    Askinazi, L G; Bulanin, V V; Vildjunas, M I; Golant, V E; Gorokhov, M V; Kornev, V A; Krikunov, S V; Lebedev, S V; Petrov, A V; Rozhdestvensky, V V; Tukachinsky, A S; Zhubr, N A

    2004-01-01

    A regime with electron heat confinement improvement was recently found in the initial phase of discharges in the TUMAN-3M tokamak. An internal transport barrier (ITB) formation in this regime was confirmed by Thomson scattering measurements and by transport modelling. Two possible reasons for the ITB formation are discussed in the paper: by reduction of turbulent transport in the presence of low magnetic shear or by plasma sheared rotation. It is demonstrated that low magnetic shear formation is possible in the current ramp-up phase of the Ohmic discharge. The low magnetic shear does not seem to be the only reason for the transport reduction. Results of Doppler reflectometry measurements of poloidal rotation of density fluctuations are presented. It is found that core confinement improvement correlates with the appearance of sheared rotation of the density fluctuations and with a burst of the MHD activity. The ITB formation in the regime seems to be a result of a combined action of reduced magnetic shear and plasma sheared rotation

  3. Nonlinear error-field penetration in low density ohmically heated tokamak plasmas

    International Nuclear Information System (INIS)

    Fitzpatrick, R

    2012-01-01

    A theory is developed to predict the error-field penetration threshold in low density, ohmically heated, tokamak plasmas. The novel feature of the theory is that the response of the plasma in the vicinity of the resonant surface to the applied error-field is calculated from nonlinear drift-MHD (magnetohydrodynamical) magnetic island theory, rather than linear layer theory. Error-field penetration, and subsequent locked mode formation, is triggered once the destabilizing effect of the resonant harmonic of the error-field overcomes the stabilizing effect of the ion polarization current (caused by the propagation of the error-field-induced island chain in the local ion fluid frame). The predicted scaling of the error-field penetration threshold with engineering parameters is (b r /B T ) crit ∼n e B T -1.8 R 0 -0.25 , where b r is the resonant harmonic of the vacuum radial error-field at the resonant surface, B T the toroidal magnetic field-strength, n e the electron number density at the resonant surface and R 0 the major radius of the plasma. This scaling—in particular, the linear dependence of the threshold with density—is consistent with experimental observations. When the scaling is used to extrapolate from JET to ITER, the predicted ITER error-field penetration threshold is (b r /B T ) crit ∼ 5 × 10 −5 , which just lies within the expected capabilities of the ITER error-field correction system. (paper)

  4. Radiation losses and global energy balance for Ohmically heated discharges in ASDEX

    International Nuclear Information System (INIS)

    Mueller, E.R.; Behringer, K.; Niedermeyer, H.

    1982-01-01

    Global energy balance, radiation profiles and dominant impurity radiation sources are compared for Ohmically heated limiter and divertor discharges in the ASDEX tokamak. In discharges with a poloidal stainless-steel limiter, total radiation from the plasma is the dominant energy loss channel. The axisymmetric divertor reduces this volume-integrated radiation to 30-35% of the heating power and additional Ti-gettering halves it again to 10-15%. Local radiation losses in the plasma centre, which are mainly due to the presence of iron impurity ions, are reduced by about one order of magnitude. In high-current (Isub(p) = 400 kA) and high-density (nsub(e)-bar = 6 x 10 13 cm -3 ) ungettered divertor discharges, up to 55% of the heating power is dumped into a cold-gas target inside the divertor chambers. The bolometrically detected volume power losses in the chambers can mainly be attributed to neutral hydrogen atoms with kinetic energies of a few eV. In this parameter range, the divertor plasma is dominated by inelastic molecular and atomic processes, the main process being Franck-Condon dissociation of H 2 molecules. (author)

  5. Confinement of ohmically heated plasmas and turbulent heating in high-magnetic field tokamak TRIAM-1

    Energy Technology Data Exchange (ETDEWEB)

    Hiraki, N; Itoh, S; Kawai, Y; Toi, K; Nakamura, K [Kyushu Univ., Fukuoka (Japan). Research Inst. for Applied Mechanics

    1979-12-01

    TRIAM-1, the tokamak device with high toroidal magnetic field, has been constructed to establish the scaling laws of advanced tokamak devices such as Alcator, and to study the possibility of the turbulent heating as a further economical heating method of the fusion oriented plasmas. The plasma parameters obtained by ohmic heating alone are as follows; central electron temperature T sub(e0) = 640 eV, central ion temperature T sub(i0) = 280 eV and line-average electron density n average sub(e) = 2.2 x 10/sup 14/ cm/sup -3/. The empirical scaling laws are investigated concerning T sub(e0), T sub(i0) and n average sub(e). The turbulent heating has been carried out by applying the high electric field in the toroidal direction to the typical tokamak discharge with T sub(i0) asymptotically equals 200 eV. The efficient ion heating is observed and T sub(i0) attains to about 600 eV.

  6. Limits on the field of ohmic heating solenoids, applied to a tokamak TNS

    International Nuclear Information System (INIS)

    Turner, L.R.

    1977-01-01

    If the ohmic heating solenoid for the TNS or other large tokamak is an ungraded cryostable superconducting solenoid, with NbTi at 4.2 K as the superconductor, then the smallest outer diameter is not achieved at the highest attainable field. There is a lower optimum field which minimizes the outer diameter for a given volt-second requirement. At higher fields the mean diameter decreases; but the high fields require more superconductor, more copper stabilizer, more stainless steel for support, and more liquid helium coolant. For the GA-ANL design for TNS, the optimum field is 7.55 T and the minimum outside diameter for the solenoid is 2.15 m. If, on the other hand, the solenoid is graded, with more NbTi, copper, and stainless steel on the inner turns where the field is higher, than the volt-seconds can always be increased, for a given outer diameter, by adding more turns at a higher field inside until either the critical field is reached or the solenoid bore is filled. However, the material and money required to add a few more volt-seconds increases rapidly with field

  7. Plasma interaction with tungsten samples in the COMPASS tokamak in ohmic ELMy H-modes

    International Nuclear Information System (INIS)

    Dimitrova, M; Weinzettl, V; Matejicek, J; Dejarnac, R; Stöckel, J; Havlicek, J; Panek, R; Popov, Tsv; Marinov, S; Costea, S

    2016-01-01

    This paper reports experimental results on plasma interaction with tungsten samples with or without pre-grown He fuzz. Under the experimental conditions, arcing was observed on the fuzzy tungsten samples, resulting in localized melting of the fuzz structure that did not extend into the bulk. The parallel power flux densities were obtained from the data measured by Langmuir probes embedded in the divertor tiles on the COMPASS tokamak. Measurements of the current-voltage probe characteristics were performed during ohmic ELMy H-modes reached in deuterium plasmas at a toroidal magnetic field B T = 1.15 T, plasma current I p = 300 kA and line-averaged electron density n e = 5×10 19 m -3 . The data obtained between the ELMs were processed by the recently published first-derivative probe technique for precise determination of the plasma potential and the electron energy distribution function (EEDF). The spatial profile of the EEDF shows that at the high-field side it is Maxwellian with a temperature of 5 -- 10 eV. The electron temperatures and the ion-saturation current density obtained were used to evaluate the radial distribution of the parallel power flux density as being in the order of 0.05 -- 7 MW/m 2 . (paper)

  8. Limits on the field of ohmic heating solenoids, applied to a tokamak TNS

    International Nuclear Information System (INIS)

    Turner, L.R.

    1978-01-01

    If the ohmic heating solenoid for the TNS or other large tokamak is an ungraded cryostable superconducting solenoid, with NbTi at 4.2 K as the superconductor, then the smallest outer diameter is not achieved at the highest attainable field. There is a lower optimum field which minimizes the outer diameter for a given volt-second requirement. At higher fields the mean diameter decreases; but the high fields require more superconductor, more copper stabilizer, more stainless steel for support, and more liquid helium coolant. For the GA-ANL design for TNS, the optimum field is 7.55 T and the minimum outside diameter for the solenoid is 2.15 m. If, on the other hand, the solenoid is graded, with more NbTi, copper, and stainless steel on the inner turns where the field is higher, then the volt-seconds can always be increased, for a given outer diameter, by adding more turns at a higher field inside until either the critical field is reached or the solenoid bore is filled. However, the material and money required to add a few more volt-seconds increases rapidly with field

  9. Investigation of silicon sensors quality as a function of the ohmic side processing technology

    CERN Document Server

    Bloch, P; Golubkov, S A; Golutvin, I A; Egorov, N; Konjkov, K; Kozlov, Y; Peisert, Anna; Sidorov, A; Zamiatin, N I; Cheremuhin, A E

    2002-01-01

    Silicon sensors designed for the CMS Preshower detector must have a high breakdown voltage in order to be fully efficient after a strong irradiation. Studies made by several groups left bracket 1,2,3 right bracket have underlined the importance of the p**+ side geometrical parameters, such as the metal width and the number and spacing of guard rings. We have in addition investigated the effects related to the ohmic side processing and found that the breakdown voltage depends strongly on the depth of the effective "dead" n**+ layer. By increasing this thickness from mum to 2.5mum, the fraction of sensors with breakdown voltage higher than 500V increased from 22% to more than 80%. On the other hand, it was noticed that the starting surface quality of the wafer (double side polished or single side polished) does not affect the detectors parameters for a given production technology. The thick n**+-layer protects against initial wafer surface and defects caused by the technological treatment during the detector pr...

  10. Global gyrokinetic simulations of intrinsic rotation in ASDEX Upgrade Ohmic L-mode plasmas

    Science.gov (United States)

    Hornsby, W. A.; Angioni, C.; Lu, Z. X.; Fable, E.; Erofeev, I.; McDermott, R.; Medvedeva, A.; Lebschy, A.; Peeters, A. G.; The ASDEX Upgrade Team

    2018-05-01

    Non-linear, radially global, turbulence simulations of ASDEX Upgrade (AUG) plasmas are performed and the nonlinear generated intrinsic flow shows agreement with the intrinsic flow gradients measured in the core of Ohmic L-mode plasmas at nominal parameters. Simulations utilising the kinetic electron model show hollow intrinsic flow profiles as seen in a predominant number of experiments performed at similar plasma parameters. In addition, significantly larger flow gradients are seen than in a previous flux-tube analysis (Hornsby et al 2017 Nucl. Fusion 57 046008). Adiabatic electron model simulations can show a flow profile with opposing sign in the gradient with respect to a kinetic electron simulation, implying a reversal in the sign of the residual stress due to kinetic electrons. The shaping of the intrinsic flow is strongly determined by the density gradient profile. The sensitivity of the residual stress to variations in density profile curvature is calculated and seen to be significantly stronger than to neoclassical flows (Hornsby et al 2017 Nucl. Fusion 57 046008). This variation is strong enough on its own to explain the large variations in the intrinsic flow gradients seen in some AUG experiments. Analysis of the symmetry breaking properties of the turbulence shows that profile shearing is the dominant mechanism in producing a finite parallel wave-number, with turbulence gradient effects contributing a smaller portion of the parallel wave-vector.

  11. Experimental study of the β-limit in ohmic H-mode in the TUMAN-3M tokamak

    International Nuclear Information System (INIS)

    Lebedev, S.V.; Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Krikunov, S.V.; Levin, L.S.; Rozhdestvensky, V.V.; Tukachinsky, A.S.; Yaroshevich, S.P.

    1998-01-01

    Because of its high confinement properties, the H-mode provides good opportunities to achieve high beta values in a tokamak. In this paper the results of an experimental study of β T and β N limits in the H-mode, obtained in a circular cross section tokamak without auxiliary heating are presented. The experiments were performed in the TUMAN-3M tokamak. The device has the following parameters: R 0 =0.53m, a s =0.22m (limiter configuration), B T ≤1.2T, I p ≤175kA, n-bar e ≤6.2x10 19 m -3 . The stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with fast current ramp-down in ohmic H-mode. A maximum value of β T of 2.0% and β N of 2.0 were achieved. The β N limit achieved reveals itself as a 'soft' (non-disruptive) limit. The stored energy slowly decays after the current ramp-down. No correlation was found between beta restriction and MHD phenomena. Internal transport barrier (ITB) formation was observed in ohmic H-mode. An enhancement factor of 2.0 over ITER93H(ELM-free) was found in the ohmic H-mode with ITB. (author)

  12. Modeling of the L.F. turbulent spectrum during ohmic discharges, auxiliary heating and disruptions in Tokamak

    International Nuclear Information System (INIS)

    Truc, A.

    1983-07-01

    The spectrum of low frequency turbulence in the TFR tokamak, as observed along a central chord by a CO 2 laser light diffusion diagnostic, appears to be representable by four monomial branches joining to three vertices. This schematic representation permits to follow more easily the evolution of the turbulence during the life of the plasma, including the ohmic regime, the transitions to auxiliary heating and the minor and major disruptions

  13. Intermittent fluctuations in the Alcator C-Mod scrape-off layer for ohmic and high confinement mode plasmas

    Science.gov (United States)

    Garcia, O. E.; Kube, R.; Theodorsen, A.; LaBombard, B.; Terry, J. L.

    2018-05-01

    Plasma fluctuations in the scrape-off layer of the Alcator C-Mod tokamak in ohmic and high confinement modes have been analyzed using gas puff imaging data. In all cases investigated, the time series of emission from a single spatially resolved view into the gas puff are dominated by large-amplitude bursts, attributed to blob-like filament structures moving radially outwards and poloidally. There is a remarkable similarity of the fluctuation statistics in ohmic plasmas and in edge localized mode-free and enhanced D-alpha high confinement mode plasmas. Conditionally averaged waveforms have a two-sided exponential shape with comparable temporal scales and asymmetry, while the burst amplitudes and the waiting times between them are exponentially distributed. The probability density functions and the frequency power spectral densities are similar for all these confinement modes. These results provide strong evidence in support of a stochastic model describing the plasma fluctuations in the scrape-off layer as a super-position of uncorrelated exponential pulses. Predictions of this model are in excellent agreement with experimental measurements in both ohmic and high confinement mode plasmas. The stochastic model thus provides a valuable tool for predicting fluctuation-induced plasma-wall interactions in magnetically confined fusion plasmas.

  14. Influence of infrared final cooking on polycyclic aromatic hydrocarbon formation in ohmically pre-cooked beef meatballs.

    Science.gov (United States)

    Kendirci, Perihan; Icier, Filiz; Kor, Gamze; Onogur, Tomris Altug

    2014-06-01

    Effects of infrared cooking on polycyclic aromatic hydrocarbon (PAH) formation in ohmically pre-cooked beef meatballs were investigated. Samples were pre-cooked in a specially designed-continuous type ohmic cooking at a voltage gradient of 15.26V/cm for 92s. Infrared cooking was applied as a final cooking method at different combinations of heat fluxes (3.706, 5.678, 8.475kW/m(2)), application distances (10.5, 13.5, 16.5cm) and application durations (4, 8, 12min). PAHs were analyzed by using high performance liquid chromatography (HPLC) equipped with a fluorescence detector. The total PAH levels were detected to be between 4.47 and 64μg/kg. Benzo[a] pyrene (B[a]P) and PAH4 (sum of B[a]P, chrysene (Chr), benzo[a]anthracene (B[a]A) and benzo[b]fluoranthene (B[b]F)) levels detected in meatballs were below the EC limits. Ohmic pre-cooking followed by infrared cooking may be regarded as a safe cooking procedure of meatballs from a PAH contamination point of view. Copyright © 2014 Elsevier Ltd. All rights reserved.

  15. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  16. Optimized design of polarizers with low ohmic loss and any polarization state for the 28 GHz QUEST ECH/ECCD system

    Energy Technology Data Exchange (ETDEWEB)

    Tsujimura, Toru Ii, E-mail: tsujimura.tohru@nifs.ac.jp [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki 509-5292 (Japan); Idei, Hiroshi [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan); Kubo, Shin; Kobayashi, Sakuji [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki 509-5292 (Japan)

    2017-01-15

    Highlights: • Ohmic loss was calculated on the grooved mirror surface in simulated polarizers. • Polarizers with a low ohmic loss feature were optimally designed for 28 GHz. • Smooth rounded-rectangular grooves were made by mechanical machining. • The designed polarizers can realize all polarization states. - Abstract: In a high-power long-pulse millimeter-wave transmission line for electron cyclotron heating and current drive (ECH/ECCD), the ohmic loss on the grooved mirror surface of polarizers is one of the important issues for reducing the transmission loss. In this paper, the ohmic loss on the mirror surface is evaluated in simulated real-scale polarizer miter bends for different groove parameters under a linearly-polarized incident wave excitation. The polarizers with low ohmic loss are optimally designed for a new 28 GHz transmission line on the QUEST spherical tokamak. The calculated optimum ohmic loss is restricted to only less than 1.5 times as large as the theoretical loss for a copper flat mirror at room temperature. The copper rounded-rectangular grooves of the polarizers were relatively easy to make smooth in mechanical machining and the resultant surface roughness was not more than 0.15 μm, which is only 0.38 times as large as the skin depth. The combination of the designed elliptical polarizer and the polarization rotator can also realize any polarization state of the reflected wave.

  17. New Approaches to the Characterization of Carbon Paste Electrodes Using the Ohmic Resistance Effect and Qualitative Carbon Paste Indexes

    Czech Academy of Sciences Publication Activity Database

    Mikysek, T.; Švancara, I.; Kalcher, K.; Bartoš, M.; Vytřas, K.; Ludvík, Jiří

    2009-01-01

    Roč. 81, č. 15 (2009), s. 6327-6333 ISSN 0003-2700 R&D Projects: GA MŠk LC510 Institutional research plan: CEZ:AV0Z40400503 Keywords : voltammetry * electroanalysis * extraction Subject RIV: CG - Electrochemistry Impact factor: 5.214, year: 2009

  18. Engineering design solutions of flux swing with structural requirements for ohmic heating solenoids

    International Nuclear Information System (INIS)

    Smith, R.A.

    1977-01-01

    Here a more detailed publication is summarized which presents analytical methods with solutions that describe the structural behavior of ohmic heating solenoids to achieve a better understanding of the relationships between the functional variables that can provide the basis for recommended design improvements. The solutions relate the requirements imposed by structural integrity to the need for producing sufficient flux swing to initiate a plasma current in the tokamak fusion machine. A method is provided to perform a detailed structural analysis of every conducting turn in the radial build of the solenoid, and computer programmed listings for the closed form solutions are made available as part of the reference document. Distinction is made in deriving separate models for the regions of the solenoid where turn-to-turn radial contact is maintained with radial compression or with a bond in the presence of radial tension, and also where there is turn-to-turn radial separation due to the absence or the loss of bonding in the presence of would be radial tension. The derivations follow the theory of elasticity for a body possessing cylindrical anisotropy where the material properties are different in the radial and tangential directions. The formulations are made practical by presenting the methods for reducing stress and for relocating the relative position for potential turn-to-turn radial delamination by permitting an arbitrary traction at the outer radial surface of the solenoid in the form of pressure or displacement such as may be applied by a containment or a shrink fit structural cylinder

  19. Analysis and testing of the DIII-D ohmic heating coil lead repair clamp

    International Nuclear Information System (INIS)

    Reis, E.E.; Anderson, P.M.; Chin, E.; Robinson, J.I.

    1997-11-01

    DIII-D has been operating for the last year with limited volt-second capabilities due to structural failure of a conductor lead to one of the ohmic heating (OH) solenoids. The conductor failure was due to poor epoxy impregnation of the overwrap of the lead pack, resulting in copper fatigue and a water leak. A number of structural analyses were performed to assist in determining the failure scenario and to evaluate various repair options. A fatigue stress analysis of the leads with a failed epoxy overwrap indicated crack initiation after 1,000 cycles at the maximum operating conditions. The failure occurred in a very inaccessible area which restricted design repair options to concepts which could be implemented remotely. Several design options were considered for repairing the lead so that it can sustain the loads for 7.5 Vs conditions at full toroidal field. A clamp, along with preloaded banding straps and shim bags, provides a system that guarantees that the stress at the crack location is always compressive and prevents further crack growth in the conductor. Due to the limited space available for the repair, it was necessary to design the clamp system to operate at the material yield stress. The primary components of the clamp system were verified by load tests prior to installation. The main body of the clamp contains a load cell and potentiometer for monitoring the load-deflection characteristics of the clamp and conductors during plasma operation. Strain gages provides redundant instrumentation. If required, the preload on the conductors can be increased remotely by a special wrench attached to the clamp assembly

  20. Plasma rotation and radial electric field with a density ramp in an ohmically heated tokamak

    International Nuclear Information System (INIS)

    Duval, B.P.; Joye, B.; Marchal, B.

    1991-10-01

    Measurements of toroidal and poloidal rotation of the TCA plasma with Alfven Wave Heating and different levels of gas feed are reported. The temporal evolution of the rotation was inferred from intrinsic spectral lines of CV, CIII and, using injected helium gas, from HeII. The light collection optics and line intensity permitted the evolution of the plasma rotation to be measured with a time resolution of 2ms. The rotation velocities were used to deduce the radial electric field. With Alfven heating there was no observable change of this electric field that could have been responsible for the density rise which is characteristic of the RF experiments on TCA. The behaviour of the plasma rotation with different plasma density ramp rates was investigated. The toroidal rotation was observed to decrease with increasing plasma density. The poloidal rotation was observed to follow the value of the plasma density. With hard gas puffing, changes in the deduced radial electric field were found to coincide with changes in the peaking of the plasma density profile. Finally, with frozen pellet injection, the expected increase in the radial electric field due to the increased plasma density was not observed, which may explain the poorer confinement of the injected particles. Even in an ohmically heated tokamak, the measurement of the plasma rotation and the radial electric field are shown to be strongly related to the confinement. A thorough statistical analysis of the systematic errors is presented and a new and significant source of uncertainty in the experimental technique is identified. (author) 18 figs., 18 refs

  1. Effect of milk fat content on the performance of ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica Serovar Typhimurium and Listeria monocytogenes.

    Science.gov (United States)

    Kim, S-S; Kang, D-H

    2015-08-01

    The effect of milk fat content on ohmic heating compared to conventional heating for inactivation of food-borne pathogens was investigated. Sterile cream was mixed with sterile buffered peptone water and adjusted to 0, 3, 7, 10% (w/v) milk fat content. These samples with varying fat content were subjected to ohmic and conventional heating. The effect of milk fat on temperature increase and electrical conductivity were investigated. Also, the protective effect of milk fat on the inactivation of foodborne pathogens was studied. For conventional heating, temperatures of samples increased with time and were not significantly (P > 0.05) different regardless of fat content. Although the inactivation rate of Escherichia coli O157:H7, Salmonella Typhimurium and L. monocytogens decreased in samples of 10% fat content, a protective effect was not observed for conventional heating. In contrast with conventional heating, ohmic heating was significantly affected by milk fat content. Temperature increased more rapidly with lower fat content for ohmic heating due to higher electrical conductivity. Nonuniform heat generation of nonhomogeneous fat-containing samples was verified using a thermal infrared camera. Also, the protective effect of milk fat on E. coli O157:H7 and Listeria monocytogenes was observed in samples subjected to ohmic heating. These results indicate that food-borne pathogens can survive in nonhomogeneous fat-containing foods subjected to ohmic heating. Therefore, more attention is needed regarding ohmic heating than conventional heating for pasteurizing fat-containing foods. The importance of adequate pasteurization for high milk fat containing foods was identified. © 2015 The Society for Applied Microbiology.

  2. High frequency ohmic loss of beryllium and its alloy with aluminium

    International Nuclear Information System (INIS)

    Prentslau, N.N.

    1999-01-01

    The surface resistance of Be of different purity and its alloy with Al (50%Be-50%Al) is investigated at temperatures ranged from 4,2 to 300 K in the 0-10 10 Hz frequency region. It is shown that within the temperature range (in the vicinity of 77 K) where beryllium is a de hyper conductor. Its surface resistance and the surface resistance of the alloy are minimum compared to that of other metals, in particular, of aluminium. The temperature dependence of the surface resistance of Be and its alloys is well described by the classical formulae of electrodynamics

  3. Field and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress method

    OpenAIRE

    Eriguchi, Koji; Wei, Zhiqiang; Takagi, Takeshi; Ohta, Hiroaki; Ono, Kouichi

    2009-01-01

    Constant voltage stress (CVS) was applied to Fe–O films prepared by a sputtering process to investigate a stress-induced resistance increase leading to a fundamental mechanism for switching behaviors. Under the CVS, an abrupt resistance increase was found for both stress polarities. A conduction mechanism after the resistance increase exhibited non-Ohmic transport. The time-to-resistance increase (tr) under the CVS was revealed to strongly depend on stress voltage as well as the polarity. Fro...

  4. Scaling theory of quantum resistance distributions in disordered systems

    International Nuclear Information System (INIS)

    Jayannavar, A.M.

    1991-01-01

    The large scale distribution of quantum Ohmic resistance of a disorderd one-dimensional conductor is derived explicitly. It is shown that in the thermodynamic limit this distribution is characterized by two independent parameters for strong disorder, leading to a two-parameter scaling theory of localization. Only in the limit of weak disorder single parameter scaling consistent with existing theoretical treatments is recovered. (author). 33 refs., 4 figs

  5. Scaling theory of quantum resistance distributions in disordered systems

    International Nuclear Information System (INIS)

    Jayannavar, A.M.

    1990-05-01

    We have derived explicitly, the large scale distribution of quantum Ohmic resistance of a disordered one-dimensional conductor. We show that in the thermodynamic limit this distribution is characterized by two independent parameters for strong disorder, leading to a two-parameter scaling theory of localization. Only in the limit of weak disorder we recover single parameter scaling, consistent with existing theoretical treatments. (author). 32 refs, 4 figs

  6. Ohmic heating of peaches in the wide range of frequencies (50 Hz to 1 MHz).

    Science.gov (United States)

    Shynkaryk, Mykola V; Ji, Taehyun; Alvarez, Valente B; Sastry, Sudhir K

    2010-09-01

    The ohmic heating (OH) rate of peaches was studied at fixed electric field strength of 60 V.cm⁻¹, square-shaped instant reversal bipolar pulses, and frequencies varying within 50 Hz to 1 MHz. Thermal damage of tissue was evaluated from electrical admittivity. It showed that the time for half disruption (τ(T)) of tissue was required more than 10 h at temperatures below 40 °C. However, cellular thermal disruption occurred almost instantly (τ(T) 90 °C). Electrical conductivity σ(o) and admittivity σ(o)* of tissue at T(o)= 0 °C and their temperature coefficients (m, m*) were calculated. For freeze-thawed tissues, σ and σ* as well as m and m* were nearly indifferent to the frequency. However, for the intact tissue, both σ(o), σ(o)* and m, m* were frequency dependent. For freeze-thawed product, the power factor (P) was approximately equal to 1 and indifferent to the frequency and temperature. On the other hand, strong frequency dependence was observed for intact tissue with the minimum P approximately equal to 0.68 in the range of tens of kHz. The time required to reach a target temperature t(f) was evaluated. The t(f) increased with frequency up to the middle of the range of tens of kHz and thereafter continuously decreased. Samples exposed to the low-frequency electric field demonstrated faster electro-thermal damage rates. The textural relaxation data supported more intense damage kinetics at low-frequency OH. It has been demonstrated that a combination of high-frequency OH with pasteurization at moderate temperature followed by rapid cooling minimizes texture degradation of peach tissue. In this study, we investigated the electric field frequency effect on the rate of OH of peaches. It was shown that the time required for reaching the target temperature is strongly dependent upon the frequency. Samples exposed to low-frequency OH demonstrated higher electro-thermal damage rates. It has been shown that the combination of high-frequency OH with

  7. Scaling of energy confinement with minor radius, current and density in Doublet III Ohmically heated plasmas

    International Nuclear Information System (INIS)

    Ejima, S.; Petrie, T.W.; Riviere, A.C.

    1982-01-01

    The dependence of plasma energy confinement on minor radius, density and plasma current is described for Ohmically heated near-circular plasmas in Doublet III. A wide range of parameters is used for the study of scaling laws; the plasma minor radius defined by the flux surface in contact with limiter is varied by a factor of 2 (a = 44, 32, and 23 cm), the line average plasma density, nsub(e)-bar, is varied by a factor of 20 from 0.5 to 10 x 10 13 cm -3 (nsub(e)-bar R 0 /Bsub(T) = 0.3 to 6 x 10 14 cm -2 .kG -1 ) and the plasma current, I, is varied by a factor of 6 from 120 to 718 kA. The range of the limiter safety factor, qsub(L), is from 2 to 12. - For plasmas with a = 23 and 32 cm, the scaling law at low nsub(e)-bar for the gross electron energy confinement time can be written as (s, cm) tausub(Ee)sup(G) approx.= 3.6 x 10 -19 nsub(e)-bar a 2 qsub(c)sup(3/4), where qsub(c) = 2πa 2 Bsub(T)/μ 0 IR 0 . For the 44-cm plasmas, tausub(Ee)sup(G) is about 1.8 times less than predicted by this scaling, possibly owing to the change in limiter configuration and small plasma-wall separation and/or the aspect ratio change. At high nsub(e)-bar, tausub(Ee)sup(G) saturates and in many cases decreases with nsub(e)-bar but increases with I in a classical-like manner. The dependence of tausub(Ee)sup(G) on a is considerably weakened. The confinement behaviour can be explained by taking an ion thermal conductivity 2 to 7 times that given by Hinton-Hazeltine's neoclassical theory with a lumped-Zsub(eff) impurity model. Within this range the enhancement factor increases with a or a/R 0 . The electron thermal conductivity evaluated at half-temperature radius where most of the thermal insulation occurs sharply increases with average current density within that radius, but does not depend on a within the uncertainties of the measurements. (author)

  8. Synergetic aspects of gas-discharge: lateral patterns in dc systems with a high ohmic barrier

    Science.gov (United States)

    Purwins, H.-G.; Stollenwerk, L.

    2014-12-01

    The understanding of self-organized patterns in spatially extended nonlinear dissipative systems is one of the most challenging subjects in modern natural sciences. Such patterns are also referred to as dissipative structures. We review this phenomenon in planar low temperature dc gas-discharge devices with a high ohmic barrier. It is demonstrated that for these systems a deep qualitative understanding of dissipative structures can be obtained from the point of view of synergetics. At the same time, a major contribution can be made to the general understanding of dissipative structures. The discharge spaces of the experimentally investigated systems, to good approximation, have translational and rotational symmetry by contraction. Nevertheless, a given system may exhibit stable current density distributions and related patterns that break these symmetries. Among the experimentally observed fundamental patterns one finds homogeneous isotropic states, fronts, periodic patterns, labyrinth structures, rotating spirals, target patterns and localized filaments. In addition, structures are observed that have the former as elementary building blocks. Finally, defect structures as well as irregular patterns are common phenomena. Such structures have been detected in numerous other driven nonlinear dissipative systems, as there are ac gas-discharge devices, semiconductors, chemical solutions, electrical networks and biological systems. Therefore, from the experimental observations it is concluded that the patterns in planar low temperature dc gas-discharge devices exhibit universal behavior. From the theoretical point of view, dissipative structures of the aforementioned kind are also referred to as attractors. The possible sets of attractors are an important characteristic of the system. The number and/or qualitative nature of attractors may change when changing parameters. The related bifurcation behavior is a central issue of the synergetic approach chosen in the present

  9. Synergetic aspects of gas-discharge: lateral patterns in dc systems with a high ohmic barrier

    International Nuclear Information System (INIS)

    Purwins, H-G; Stollenwerk, L

    2014-01-01

    The understanding of self-organized patterns in spatially extended nonlinear dissipative systems is one of the most challenging subjects in modern natural sciences. Such patterns are also referred to as dissipative structures. We review this phenomenon in planar low temperature dc gas-discharge devices with a high ohmic barrier. It is demonstrated that for these systems a deep qualitative understanding of dissipative structures can be obtained from the point of view of synergetics. At the same time, a major contribution can be made to the general understanding of dissipative structures. The discharge spaces of the experimentally investigated systems, to good approximation, have translational and rotational symmetry by contraction. Nevertheless, a given system may exhibit stable current density distributions and related patterns that break these symmetries. Among the experimentally observed fundamental patterns one finds homogeneous isotropic states, fronts, periodic patterns, labyrinth structures, rotating spirals, target patterns and localized filaments. In addition, structures are observed that have the former as elementary building blocks. Finally, defect structures as well as irregular patterns are common phenomena. Such structures have been detected in numerous other driven nonlinear dissipative systems, as there are ac gas-discharge devices, semiconductors, chemical solutions, electrical networks and biological systems. Therefore, from the experimental observations it is concluded that the patterns in planar low temperature dc gas-discharge devices exhibit universal behavior. From the theoretical point of view, dissipative structures of the aforementioned kind are also referred to as attractors. The possible sets of attractors are an important characteristic of the system. The number and/or qualitative nature of attractors may change when changing parameters. The related bifurcation behavior is a central issue of the synergetic approach chosen in the present

  10. Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts.

    Science.gov (United States)

    Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Liu, Yingce; Liu, Mengling; Liu, Zongyuan; Gui, Chengqun; Liu, Sheng

    2017-10-30

    We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic contacts. We show that a direct Ohmic contact to p-GaN layer using pure Ag is obtained when annealed at 600°C in N 2 ambient. A TiW diffusion barrier layer covered onto Ag is used to suppress the agglomeration of Ag and thus maintain high reflectance of Ag during high temperature annealing process. We develop a strip-shaped SiO 2 current blocking layer beneath the ITO/DBR to alleviate current crowding occurring in FCLED with ITO/DBR. Owing to negligibly small spreading resistance of Ag, however, our combined numerical and experimental results show that the FCLED with Ag/TiW has a more favorable current spreading uniformity in comparison to the FCLED with ITO/DBR. As a result, the light output power of FCLED with Ag/TiW is 7.5% higher than that of FCLED with ITO/DBR at 350 mA. The maximum output power of the FCLED with Ag/TiW obtained at 305.6 A/cm 2 is 29.3% larger than that of the FCLED with ITO/DBR obtained at 278.9 A/cm 2 . The improvement appears to be due to the enhanced current spreading and higher optical reflectance provided by the Ag/TiW.

  11. A numerical simulation model of valence-change-based resistive switching

    OpenAIRE

    Marchewka, Astrid

    2017-01-01

    Due to their superior scalability and performance, nanoscale resistive switches based on the valence-change mechanism are considered promising candidates for future nonvolatile memory and logic applications. These devices are metal-oxide-metal structures that can be reversibly switched between different resistance states by electrical signals. Typically, they contain one Schottky-like and one ohmic-like metal-oxide contact and exhibit bipolar switching. The switching mechanism and the initial...

  12. Analysis of Electron Thermal Diffusivity and Bootstrap Current in Ohmically Heated Discharges after Boronization in the HT-7 Tokamak

    International Nuclear Information System (INIS)

    Zhang, X.M.; Wan, B.N.

    2005-01-01

    Significant improvements of plasma performance after ICRF boronization have been achieved in the full range of HT-7 operation parameters. Electron power balance is analyzed in the steady state ohmic discharges of the HT-7 tokamak. The ratio of the total radiation power to ohmic input power increases with increasing the central line-averaged electron density, but decreases with plasma current. It is obviously decreased after wall conditioning. Electron heat diffusivity χ e deduced from the power balance analysis is reduced throughout the main plasma after boronization. χ e decreases with increasing central line-averaged electron density in the parameter range of our study. After boronization, the plasma current profile is broadened and a higher current can be easily obtained on the HT-7 tokamak experiment. It is expected that the fact that the bootstrap current increases after boronization will explain these phenomena. After boronization, the plasma pressure gradient and the electron temperature near the boundary are larger than before, these factors influencing that the ratio of bootstrap current to total plasma current increases from several percent to above 10%

  13. Lack of dependence on resonant error field of locked mode island size in ohmic plasmas in DIII-D

    Science.gov (United States)

    La Haye, R. J.; Paz-Soldan, C.; Strait, E. J.

    2015-02-01

    DIII-D experiments show that fully penetrated resonant n = 1 error field locked modes in ohmic plasmas with safety factor q95 ≳ 3 grow to similar large disruptive size, independent of resonant error field correction. Relatively small resonant (m/n = 2/1) static error fields are shielded in ohmic plasmas by the natural rotation at the electron diamagnetic drift frequency. However, the drag from error fields can lower rotation such that a bifurcation results, from nearly complete shielding to full penetration, i.e., to a driven locked mode island that can induce disruption. Error field correction (EFC) is performed on DIII-D (in ITER relevant shape and safety factor q95 ≳ 3) with either the n = 1 C-coil (no handedness) or the n = 1 I-coil (with ‘dominantly’ resonant field pitch). Despite EFC, which allows significantly lower plasma density (a ‘figure of merit’) before penetration occurs, the resulting saturated islands have similar large size; they differ only in the phase of the locked mode after typically being pulled (by up to 30° toroidally) in the electron diamagnetic drift direction as they grow to saturation. Island amplification and phase shift are explained by a second change-of-state in which the classical tearing index changes from stable to marginal by the presence of the island, which changes the current density profile. The eventual island size is thus governed by the inherent stability and saturation mechanism rather than the driving error field.

  14. Changes in core electron temperature fluctuations across the ohmic energy confinement transition in Alcator C-Mod plasmas

    International Nuclear Information System (INIS)

    Sung, C.; White, A.E.; Howard, N.T.; Oi, C.Y.; Rice, J.E.; Gao, C.; Ennever, P.; Porkolab, M.; Parra, F.; Ernst, D.; Walk, J.; Hughes, J.W.; Irby, J.; Kasten, C.; Hubbard, A.E.; Greenwald, M.J.; Mikkelsen, D.

    2013-01-01

    The first measurements of long wavelength (k y ρ s < 0.3) electron temperature fluctuations in Alcator C-Mod made with a new correlation electron cyclotron emission diagnostic support a long-standing hypothesis regarding the confinement transition from linear ohmic confinement (LOC) to saturated ohmic confinement (SOC). Electron temperature fluctuations decrease significantly (∼40%) crossing from LOC to SOC, consistent with a change from trapped electron mode (TEM) turbulence domination to ion temperature gradient (ITG) turbulence as the density is increased. Linear stability analysis performed with the GYRO code (Candy and Waltz 2003 J. Comput. Phys. 186 545) shows that TEMs are dominant for long wavelength turbulence in the LOC regime and ITG modes are dominant in the SOC regime at the radial location (ρ ∼ 0.8) where the changes in electron temperature fluctuations are measured. In contrast, deeper in the core (ρ < 0.8), linear stability analysis indicates that ITG modes remain dominant across the LOC/SOC transition. This radial variation suggests that the robust global changes in confinement of energy and momentum occurring across the LOC/SOC transition are correlated to local changes in the dominant turbulent mode near the edge. (paper)

  15. Density scaling on n  =  1 error field penetration in ohmically heated discharges in EAST

    Science.gov (United States)

    Wang, Hui-Hui; Sun, You-Wen; Shi, Tong-Hui; Zang, Qing; Liu, Yue-Qiang; Yang, Xu; Gu, Shuai; He, Kai-Yang; Gu, Xiang; Qian, Jin-Ping; Shen, Biao; Luo, Zheng-Ping; Chu, Nan; Jia, Man-Ni; Sheng, Zhi-Cai; Liu, Hai-Qing; Gong, Xian-Zu; Wan, Bao-Nian; Contributors, EAST

    2018-05-01

    Density scaling of error field penetration in EAST is investigated with different n  =  1 magnetic perturbation coil configurations in ohmically heated discharges. The density scalings of error field penetration thresholds under two magnetic perturbation spectra are br\\propto n_e0.5 and br\\propto n_e0.6 , where b r is the error field and n e is the line averaged electron density. One difficulty in understanding the density scaling is that key parameters other than density in determining the field penetration process may also be changed when the plasma density changes. Therefore, they should be determined from experiments. The estimated theoretical analysis (br\\propto n_e0.54 in lower density region and br\\propto n_e0.40 in higher density region), using the density dependence of viscosity diffusion time, electron temperature and mode frequency measured from the experiments, is consistent with the observed scaling. One of the key points to reproduce the observed scaling in EAST is that the viscosity diffusion time estimated from energy confinement time is almost constant. It means that the plasma confinement lies in saturation ohmic confinement regime rather than the linear Neo-Alcator regime causing weak density dependence in the previous theoretical studies.

  16. Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

    Directory of Open Access Journals (Sweden)

    Chung-Hua Chao

    2013-01-01

    Full Text Available This paper describes a fabrication and characterization of ultraviolet (UV photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002 thin film. Plasma enhanced chemical vapor deposition (PECVD system was employed to deposit ZnO (0002 thin films onto silicon substrates, and radio-frequency (RF magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two different ambients (argon and nitrogen to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, atomic force microscopy (AFM, photoluminescence (PL, UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H52] to carbon dioxide (CO2 and then combined with Pt electrode annealed at 450∘C in argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

  17. Combined use of a field-plate and narrow p-barriers for a wide-pitch ohmic-side readout of the BELLE double-sided SVD

    International Nuclear Information System (INIS)

    Ikeda, H.; Matsuda, T.

    1997-01-01

    We explored wide-pitch ohmic-side structures for the BELLE SVD, where we proposed a field-plate structure combined with narrow p-barriers in between the readout electrodes of 90, 113, 180, and 226 μm-pitch detectors. The effect of the p-barriers was studied with a numerical model to trace the carrier trajectories. The charge collection and sharing properties were examined in practice for prototype small-size detectors with an IR pulse shining from either the junction side or the ohmic side. The channel separation capabilities were also shown to be appropriate under nominal operation conditions. (orig.)

  18. Non-ohmic phenomena in Mn-doped BaTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prades, Marta; Beltran, Hector; Cordoncillo, Eloisa [Departamento de Quimica Inorganica y Organica, Universitat Jaume I, Avda. Sos Baynat s/n, 12071 Castellon (Spain); Alonso, Pablo J. [Instituto de Ciencia de Materiales de Aragon, ICMA, Universidad de Zaragoza-C.S.I.C., C/Pedro Cerbuna 12, 50009 Zaragoza (Spain); Maso, Nahum; West, Anthony R. [Department of Materials Science and Engineering, University of Sheffield, Mappin Street, S1 3JD Sheffield (United Kingdom)

    2012-11-15

    We report here a novel effect in which the resistance of a semiconducting oxide ceramic increases on application of a small dc bias. The ceramic conducts at high temperatures by an n-type hopping mechanism. On application of a dc bias, conduction electrons are trapped at surface states and the resistance increases. On removal of the dc bias, the trapped electrons are released and the sample regains its original state. This effect is the mirror image of that seen with similar ceramics that conduct by a p-type mechanism whose resistance decreases reversibly on application of a small dc bias. These two phenomena together offer the possibility of novel switching devices and memristive applications, especially if the switching times can be reduced. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Non-ohmic phenomena in Mn-doped BaTiO3

    International Nuclear Information System (INIS)

    Prades, Marta; Beltran, Hector; Cordoncillo, Eloisa; Alonso, Pablo J.; Maso, Nahum; West, Anthony R.

    2012-01-01

    We report here a novel effect in which the resistance of a semiconducting oxide ceramic increases on application of a small dc bias. The ceramic conducts at high temperatures by an n-type hopping mechanism. On application of a dc bias, conduction electrons are trapped at surface states and the resistance increases. On removal of the dc bias, the trapped electrons are released and the sample regains its original state. This effect is the mirror image of that seen with similar ceramics that conduct by a p-type mechanism whose resistance decreases reversibly on application of a small dc bias. These two phenomena together offer the possibility of novel switching devices and memristive applications, especially if the switching times can be reduced. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

    NARCIS (Netherlands)

    Farmanbar Gelepordsari, M.; Brocks, G.

    2016-01-01

    High contact resistances have blocked the progress of devices based on MX2 (M = Mo, W; X = S, Se, Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. It is shown that i) one can remove the

  1. Quench of non-Markovian coherence in the deep sub-Ohmic spin–boson model: A unitary equilibration scheme

    International Nuclear Information System (INIS)

    Yao, Yao

    2015-01-01

    The deep sub-Ohmic spin–boson model shows a longstanding non-Markovian coherence at low temperature. Motivating to quench this robust coherence, the thermal effect is unitarily incorporated into the time evolution of the model, which is calculated by the adaptive time-dependent density matrix renormalization group algorithm combined with the orthogonal polynomials theory. Via introducing a unitary heating operator to the bosonic bath, the bath is heated up so that a majority portion of the bosonic excited states is occupied. It is found in this situation the coherence of the spin is quickly quenched even in the coherent regime, in which the non-Markovian feature dominates. With this finding we come up with a novel way to implement the unitary equilibration, the essential term of the eigenstate-thermalization hypothesis, through a short-time evolution of the model

  2. Formation of an internal transport barrier in the ohmic H-mode in the TUMAN-3M tokamak

    International Nuclear Information System (INIS)

    Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Zhubr, N.A.; Kornev, V.A.; Krikunov, S.V.; Lebedev, S.V.; Levin, L.S.; Razdobarin, G.T.; Rozhdestvensky, V.V.; Smirnov, A.I.; Tukachinsky, A.S.; Yaroshevich, S.P.

    2000-01-01

    In experiments on studying the ohmic H-mode in the TUMAN-3M tokamak, it is found that, in high-current (I p ∼ 120-170 kA) discharges, a region with high electron-temperature and density gradients is formed in the plasma core. In this case, the energy confinement time τ E attains 9-18 ms, which is nearly twice as large as that predicted by the ELM-free ITER-93H scaling. This is evidence that the internal transport barrier in a plasma can exist without auxiliary heating. Calculations of the effective thermal diffusivity by the ASTRA transport code demonstrate a strong suppression of heat transport in the region where the temperature and density gradients are high

  3. Optimization of ohmic heating parameters for polyphenoloxidase inactivation in not-from-concentrate elstar apple juice using RSM

    DEFF Research Database (Denmark)

    Abedelmaksoud, Tarek; Mohsen, Sobhy Mohamed; Duedahl-Olesen, Lene

    2018-01-01

    In this study, optimization of ohmic heating (OH) process parameters (temperature and voltage gradient) to inactivate polyphenoloxidase (PPO) of not-from-concentrate (NFC) apple juice was conducted. Response surface methodology was used for optimization of OH parameters, where the voltage gradient...... and temperature on the PPO activity in the NFC apple juice was evaluated. Then the optimized condition was used to produce the NFC apple juice and the quality parameters were evaluated and compared to NFC apple juice prepared by conventional heating (CH). The studied parameters were: PPO activity, total phenolic......, total carotenoids, ascorbic acid, cloud value, color as well as physical properties (i.e., TSS, acidity, electric conductivity and viscosity). The reduction of PPO activities was 97 and 91% for OH (at 40 V/cm and 80 °C) and CH (at 90 °C and 60 s), respectively. The reduction of the ascorbic acid...

  4. Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

    2007-01-01

    Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

  5. Rigorous treatment of the non-ohmic d.c. conductivity due to phonon-assisted tunneling from localized to extended states

    International Nuclear Information System (INIS)

    Majernikova, E.

    1984-03-01

    A quantitative treatment of the non-ohmic current response due to delocalization of shallow localized electrons in a model of a disordered solid is given. A phonon-assisted tunneling in electric field from shallow localized to extended states is confirmed as a mechanism leading to the dependence which was experimentally found for chalcogenide glasses. (author)

  6. An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

    Science.gov (United States)

    Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

    2018-04-01

    In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

  7. Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

    DEFF Research Database (Denmark)

    Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

    2002-01-01

    We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

  8. Evolution of the Turbulence Radial Wavenumber Spectrum near the L-H Transition in NSTX Ohmic Discharges

    Energy Technology Data Exchange (ETDEWEB)

    Kubota, S.; Peebles, W.A., E-mail: skubota@ucla.edu [UCLA, Los Angeles (United States); Bush, C. E.; Maingi, R. [Oak Ridge National Laboratory, Oak Ridge (United States); Zweben, S. J.; Bell, R.; Crocker, N.; Diallo, A.; Kaye, S.; LeBlanc, B. P.; Park, J. K.; Ren, Y. [Princeton Plasma Physics Laboratory, Princeton University, Princeton (United States); Maqueda, R. J. [Nova Photonics, Princeton (United States); Raman, R. [University of Washington, Seattle (United States)

    2012-09-15

    Full text: The measurement of radially extended meso-scale structures such as zonal flows and streamers, as well as the underlying microinstabilities driving them, is critical for understanding turbulence-driven transport in plasma devices. In particular, the shape and evolution of the radial wavenumber spectrum indicate details of the nonlinear spectral energy transfer, the spreading of turbulence, as well as the formation of transport barriers. In the National Spherical Torus Experiment (NSTX), the FMCW backscattering diagnostic is used to probe the turbulence radial wavenumber spectrum (k{sub r} = 0 - 22 cm-1 ) across the outboard minor radius near the L- to H-mode transition in Ohmic discharges. During the L-mode phase, a broad spectral component (k{sub r} {approx} 2 - 10 cm{sup -1} ) extends over a significant portion of the edge-core from R = 120 to 155 cm ({rho} = 0.4 - 0.95). At the L-H transition, turbulence is quenched across the measurable k{sub r} range at the ETB location, where the radial correlation length drops from {approx} 1.5 - 0.5 cm. The k{sub r} spectrum away from the ETB location is modified on a time scale of tens of microseconds, indicating that nonlocal turbulence dynamics are playing a strong role. Close to the L-H transition, oscillations in the density gradient and edge turbulence quenching become highly correlated. These oscillations are also present in Ohmic discharges without an L-H transition, but are far less frequent. Similar behavior is also seen near the L-H transition in NB-heated discharges. (author)

  9. The isotope effect on divertor conditions and neutral pumping in horizontal divertor configurations in JET-ILW Ohmic plasmas

    Directory of Open Access Journals (Sweden)

    J. Uljanovs

    2017-08-01

    Full Text Available Understanding the impact of isotope mass and divertor configuration on the divertor conditions and neutral pressures is critical for predicting the performance of the ITER divertor in DT operation. To address this need, ohmically heated hydrogen and deuterium plasma experiments were conducted in JET with the ITER-like wall in varying divertor configurations. In this study, these plasmas are simulated with EDGE2D-EIRENE outfitted with a sub-divertor model, to predict the neutral pressures in the plenum with similar fashion to the experiments. EDGE2D-EIRENE predictions show that the increased isotope mass results in up to a 25% increase in peak electron densities and 15% increase in peak ion saturation current at the outer target in deuterium when compared to hydrogen for all horizontal divertor configurations. Indicating that a change from hydrogen to deuterium as main fuel decreases the neutral mean free path, leading to higher neutral density in the divertor. Consequently, this mechanism also leads to higher neutral pressures in the sub-divertor. The experimental data provided by the hydrogen and deuterium ohmic discharges shows that closer proximity of the outer strike point to the pumping plenum results in a higher neutral pressure in the sub-divertor. The diaphragm capacitance gauge pressure measurements show that a two to three-fold increase in sub-divertor pressure was achieved in the corner and nearby horizontal configurations compared to the far-horizontal configurations, likely due to ballistic transport (with respect to the plasma facing components of the neutrals into the sub-divertor. The corner divertor configuration also indicates that a neutral expansion occurs during detachment, resulting in a sub-divertor neutral density plateau as a function of upstream density at the outer-mid plane.

  10. High-ohmic low-noise resistor for spectrometers with cooled semiconductor detectors

    International Nuclear Information System (INIS)

    Baldin, S.A.; Zhargal, Ch.; Zorin, G.N.; Laskus, T.; Osipenko, B.P.; Revenko, A.V.; Ryakhovskaya, T.I.

    1985-01-01

    BackgroUnd noise and energy resolution of a new type of resistors, designed to be used as a resistance in a feedback circuit of an X-ray spectrometer preamplifier are studied. The resistors are manufactured using the method of photolithography from high-resistance films, formed on the surface of lead-silicate glasses, as a result of redox processes during heat treatment in hydrogen atmosphere. Energy resolution of the spectrometer is measured on the line 55 FeKX(Mn) with the energy 5.8 keV. The conclusion is made, that the level of background noises in the resistors studied is approximately 4 times lower the level of noises in the KVM type resistors, which are commercially produced in industry

  11. Low resistivity contacts to YBa2Cu3O(7-x) superconductors

    Science.gov (United States)

    Hsi, Chi-Shiung; Haertling, Gene H.

    1991-01-01

    Silver, gold, platinum, and palladium metals were investigated as electroding materials for the YBa2Cu3O(7-x) superconductors. Painting, embedding, and melting techniques were used to apply the electrodes. Contact resistivities were determined by: (1) type of electrode; (2) firing conditions; and (3) application method. Electrodes fired for long times exhibited lower contact resistivities than those fired for short times. Low-resistivity contacts were found for silver and gold electrodes. Silver, which made good ohmic contact to the YBa2Cu3O(7-x) superconductor with low contact resistivities was found to be the best electroding material among the materials evaluated in this investigation.

  12. Stability, bistability and instability of amorphous ZrO2 resistive memory devices

    International Nuclear Information System (INIS)

    Parreira, P; Paterson, G W; McVitie, S; MacLaren, D A

    2016-01-01

    Amorphous zirconium oxide thin films deposited at room temperature, sandwiched between Pt and Ti electrodes, show resistive bipolar resistive switching with good overall performance figures (retention, ON/OFF ratio and durability). A variability observed during electrical characterisation is consistent with the coexistence of two different resistive switching mechanisms within the ZrO 2 layer. Electron energy loss spectroscopy is used to map chemical variations across the device on the nanoscale. Partial oxidation of the Ti electrode creates an ohmic contact with zirconia and injects positively charged oxygen vacancies into the zirconia layer that are then responsible for resistive switching at the Pt / zirconia interface. (paper)

  13. Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga{sub 2}O{sub 3} solar-blind ultraviolet photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Guo, D. Y.; Wu, Z. P.; An, Y. H.; Guo, X. C.; Chu, X. L.; Sun, C. L.; Tang, W. H., E-mail: whtang@bupt.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Li, L. H. [Physics Department, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States); Li, P. G., E-mail: pgli@zstu.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang (China)

    2014-07-14

    β-Ga{sub 2}O{sub 3} epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

  14. Application of low frequency pulsed ohmic heating for inactivation of foodborne pathogens and MS-2 phage in buffered peptone water and tomato juice.

    Science.gov (United States)

    Kim, Sang-Soon; Choi, Won; Kang, Dong-Hyun

    2017-05-01

    The purpose of this study was to inactivate foodborne pathogens effectively by ohmic heating in buffered peptone water and tomato juice without causing electrode corrosion and quality degradation. Escherichia coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes were used as representative foodborne pathogens and MS-2 phage was used as a norovirus surrogate. Buffered peptone water and tomato juice inoculated with pathogens were treated with pulsed ohmic heating at different frequencies (0.06-1 kHz). Propidium iodide uptake values of bacterial pathogens were significantly (p heating is applicable to inactivate foodborne pathogens effectively without causing electrode corrosion and quality degradation in tomato juice. Copyright © 2016. Published by Elsevier Ltd.

  15. Role of stochasticity in turbulence and convective intermittent transport at the scrape off layer of Ohmic plasma in QUEST

    International Nuclear Information System (INIS)

    Banerjee, Santanu; Ishiguro, M.; Tashima, S.; Mishra, K.; Zushi, H.; Hanada, K.; Nakamura, K.; Idei, H.; Hasegawa, M.; Fujisawa, A.; Nagashima, Y.; Matsuoka, K.; Nishino, N.; Liu, H. Q.

    2014-01-01

    Statistical features of fluctuations are investigated using the fast camera imaging technique in the scrape of layer (SOL) of electron cyclotron resonance heated Ohmic plasma. Fluctuations in the SOL towards low field side are dominated by coherent convective structures (blobs). Two dimensional structures of the higher order moments (skewness s and kurtosis k) representing the shape of probability density function (PDF) are studied. s and k are seen to be functions of the magnetic field lines. s and k are consistently higher towards the bottom half of the vessel in the SOL showing the blob trajectory along the field lines from the top towards bottom of the vessel. Parabolic relation (k=As 2 +C) is observed between s and k near the plasma boundary, featuring steep density gradient region and at the far SOL. The coefficient A, obtained experimentally, indicates a shift of prominence from pure drift-wave instabilities towards fully developed turbulence. Numerical coefficients characterizing the Pearson system are derived which demonstrates the progressive deviation of the PDF from Gaussian towards gamma from the density gradient region, towards the far SOL. Based on a simple stochastic differential equation, a direct correspondence between the multiplicative noise amplitude, increased intermittency, and hence change in PDF is discussed

  16. Impact of Ohmic-Assisted Decoction on Bioactive Components Extracted from Yacon (Smallanthus sonchifolius Poepp. Leaves: Comparison with Conventional Decoction

    Directory of Open Access Journals (Sweden)

    Forough Khajehei

    2017-11-01

    Full Text Available Yacon (Smallanthus sonchifolius Poepp. leaves are a potentially rich source of bioactive compounds, such as phenolic acids and flavonoids. In this study, the effect of the extraction method (ohmic-assisted decoction (OH-DE and decoction (DE, yacon cultivar (red and white, and leaf age (young and old on the quality/quantity of extracted phytochemicals were investigated. Extraction yield, energy consumption, total phenolic content (TPC, total flavonoid content (TFC, ABTS and DPPH radical scavenging activity, and ferric reducing antioxidant power (FRAP were determined. Additionally, HPLC-DAD was used to identify the major individual phenolic and flavonoid compounds of yacon leaves. The results showed that a three-way interaction of process-variables (extraction method×yacon cultivar×age of leaves influenced the extraction yield, TPC, TFC, ABTS, and DPPH radical scavenging activity, and FRAP, significantly (p < 0.05. However, energy consumption of the extraction process was only affected by method of extraction (p < 0.05 and was halved when OH-DE was applied as compared to DE alone. Additionally, the phytochemical quality of extracts was either improved or comparable when OH-DE was used for extraction. Also, it was shown that yacon leaves contained considerable amounts of caffeic acid, chlorogenic acid, ferrulic acid, myricetin, p-coumaric acid, and rutin, while leaves of the red cultivar had higher contents of each compound compared to leaves of the white cultivar.

  17. Uncovering nonperturbative dynamics of the biased sub-Ohmic spin-boson model with variational matrix product states

    Science.gov (United States)

    Gonzalez-Ballestero, C.; Schröder, Florian A. Y. N.; Chin, Alex W.

    2017-09-01

    We study the dynamics of the biased sub-Ohmic spin-boson model by means of a time-dependent variational matrix product state (TDVMPS) algorithm. The evolution of both the system and the environment is obtained in the weak- and the strong-coupling regimes, respectively characterized by damped spin oscillations and by a nonequilibrium process where the spin freezes near its initial state, which are explicitly shown to arise from a variety of reactive environmental quantum dynamics. We also explore the rich phenomenology of the intermediate-coupling case, a nonperturbative regime where the system shows a complex dynamical behavior, combining features of both the weakly and the strongly coupled case in a sequential, time-retarded fashion. Our work demonstrates the potential of TDVMPS methods for exploring otherwise elusive, nonperturbative regimes of complex open quantum systems, and points to the possibilities of exploiting the qualitative, real-time modification of quantum properties induced by nonequilibrium bath dynamics in ultrafast transient processes.

  18. Summary of experimental core turbulence characteristics in ohmic and electron cyclotron resonance heated discharges in T-10 tokamak plasmas

    International Nuclear Information System (INIS)

    Vershkov, V.A.; Shelukhin, D.A.; Soldatov, S.V.; Urazbaev, A.O.; Grashin, S.A.; Eliseev, L.G.; Melnikov, A.V.

    2005-01-01

    This report summarizes the results of experimental turbulence investigations carried out at T-10 for more than 10 years. The turbulence characteristics were investigated using correlation reflectometry, multipin Langmuir probe (MLP) and heavy ion beam probe diagnostics. The reflectometry capabilities were analysed using 2D full-wave simulations and verified by direct comparison using a MLP. The ohmic and electron cyclotron resonance heated discharges show the distinct transition from the core turbulence, having complex spectral structure, to the unstructured one in the scrape-off layer. The core turbulence includes 'broad band, quasi-coherent' features, arising due to the excitation of rational surfaces with high poloidal m-numbers, with a low frequency near zero and specific oscillations at 15-30 kHz. All experimentally measured properties of low frequency and high frequency quasi-coherent oscillations are in good agreement with predictions of linear theory for the ion temperature gradient/dissipative trapped electron mode instabilities. Significant local changes in the turbulence characteristics were observed at the edge velocity shear layer and in the core near q = 1 radius after switching off the electron cyclotron resonance heating (ECRH). The local decrease in the electron heat conductivity and decrease in the turbulence level could be evidence of the formation of an electron internal transport barrier. The dynamic behaviour of the core turbulence was also investigated for the case of fast edge cooling and the beginning phase of ECRH

  19. Investigation of optimum ohmic heating conditions for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in apple juice.

    Science.gov (United States)

    Park, Il-Kyu; Ha, Jae-Won; Kang, Dong-Hyun

    2017-05-19

    Control of foodborne pathogens is an important issue for the fruit juice industry and ohmic heating treatment has been considered as one of the promising antimicrobial interventions. However, to date, evaluation of the relationship between inactivation of foodborne pathogens and system performance efficiency based on differing soluble solids content of apple juice during ohmic heating treatment has not been well studied. This study aims to investigate effective voltage gradients of an ohmic heating system and corresponding sugar concentrations (°Brix) of apple juice for inactivating major foodborne pathogens (E. coli O157:H7, S. Typhimurium, and L. monocytogenes) while maintaining higher system performance efficiency. Voltage gradients of 30, 40, 50, and 60 V/cm were applied to 72, 48, 36, 24, and 18 °Brix apple juices. At all voltage levels, the lowest heating rate was observed in 72 °Brix apple juice and a similar pattern of temperature increase was shown in18-48 °Brix juice samples. System performance coefficients (SPC) under two treatment conditions (30 V/cm in 36 °Brix or 60 V/cm in 48 °Brix juice) were relatively greater than for other combinations. Meanwhile, 5-log reductions of the three foodborne pathogens were achieved after treatment for 60 s in 36 °Brix at 30 V/cm, but this same reduction was observed in 48 °Brix juice at 60 V/cm within 20 s without affecting product quality. With respect to both bactericidal efficiency and SPC values, 60 V/cm in 48 °Brix was the most effective ohmic heating treatment combination for decontaminating apple juice concentrates.

  20. Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Ynsa, M.D.; Romero, M.F.; Alves, L.C.; Muñoz, E.

    2013-01-01

    The homogeneity of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN devices was analyzed as a function of the thickness of the Ti barrier (30 nm 50 nm, although several compositional deficiencies were identified in the distribution maps obtained with the ion microprobe, including the formation of craters. A clear interplay between Ti and Au was found, suggesting the relevance of lateral flows during the rapid thermal annealing

  1. Transport simulations of ohmic TFTR experiments with profile-consistent microinstability-based models for chi/sub e/ and chi/sub i/

    International Nuclear Information System (INIS)

    Redi, M.H.; Tang, W.M.; Efthimion, P.C.; Mikkelsen, D.R.; Schmidt, G.L.

    1987-03-01

    Transport simulations of ohmically heated TFTR experiments with recently developed profile-consistent microinstability models for the anomalous thermal diffusivities, chi/sub e/ and chi/sub i/, give good agreement with experimental data. The steady-state temperature profiles and the total energy confinement times, tau/sub e/, were found to agree for each of the ohmic TFTR experiments simulated, including three high radiation cases and two plasmas fueled by pellet injection. Both collisional and collisionless models are tested. The trapped-electron drift wave microinstability model results are consistent with the thermal confinement of large plasma ohmic experiments on TFTR. We also find that transport due to the toroidal ion temperature gradient (eta/sub i/) modes can cause saturation in tau/sub E/ at the highest densities comparable to that observed on TFTR and equivalent to a neoclassical anomaly factor of 3. Predictions based on stabilized eta/sub i/-mode-driven ion transport are found to be in agreement with the enhanced global energy confinement times for pellet-fueled plasmas. 33 refs., 26 figs., 4 tabs

  2. Evidence for reduction of the toroidal ITG instability in the transition from saturated to improved Ohmic confinement in the tokamak TEXTOR

    International Nuclear Information System (INIS)

    Kreter, A; Schweer, B; Tokar, M Z; Unterberg, B

    2003-01-01

    In high density Ohmically heated discharges in the tokamak TEXTOR a transition from the saturated Ohmic confinement (SOC) to the improved Ohmic confinement (IOC) was observed triggered by a sudden reduction of the external gas flow. The SOC-IOC transition was investigated regarding the influence of the toroidal ITG instability driven by the ion temperature gradient (ITG). The ion temperature profiles were measured with high radial resolution by means of charge-exchange recombination spectroscopy (CXRS) with a high-energetic diagnostic hydrogen beam recently installed at TEXTOR. On the basis of the measured ion temperature distributions the η i parameter (ratio of the density and ion temperature decay lengths) and the growth rate of the toroidal ITG instability were calculated. After the SOC-IOC transition η i drops and lies in a noticeably smaller radial region over the threshold for the toroidal ITG. In consequence of it, the IOC regime is characterized by a clear reduction of the ITG growth rate γ ITG which was calculated including finite Larmor radius effects. The steepening of the plasma density profile after the decrease of the external gas flow is the main reason for the reduction of the ITG growth rate and the subsequent confinement transition to the IOC regime

  3. Modeling electrochemical resistance with coal surface properties in a direct carbon fuel cell based on molten carbonate

    Science.gov (United States)

    Eom, Seongyong; Ahn, Seongyool; Kang, Kijoong; Choi, Gyungmin

    2017-12-01

    In this study, a numerical model of activation and ohmic polarization is modified, taking into account the correlation function between surface properties and inner resistance. To investigate the correlation function, the surface properties of coal are changed by acid treatment, and the correlations between the inner resistance measured by half-cell tests and the surface characteristics are analyzed. A comparison between the model and experimental results demonstrates that the absolute average deviations for each fuel are less than 10%. The numerical results show that the sensitivities of the coal surface properties affecting polarization losses change depending on the operating temperature. The surface oxygen concentrations affect the activation polarization and the sensitivity decreased with increasing temperature. The surface ash of coal is an additional index to be considered along with ohmic polarization and it has the greatest effect on the surface properties at 973 K.

  4. Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

    Science.gov (United States)

    Lee, S.-K.; Zetterling, C.-M.; Ostling, M.

    2002-07-01

    We report on the microscopic mapping of specific contact resistances (rhoc) and long-term reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type epilayers of 4H-silicon carbide. The TiW ohmic contacts showed good uniformity with low contact resistivity of 3.3 x10-5 Omega cm2. Microscopic mapping of the rhoc showed that the rhoc had a distribution that decreased from the center to the edge of the wafer. This distribution of the rhoc is caused by variation of the doping concentration of the wafer. Sacrificial oxidation at high temperature partially recovered inductively coupled plasma etch damage. TiW contacts with platinum and gold capping layers have stable specific contact resistance at 500 and 600 degC in a vacuum chamber for 308 h.

  5. Simulation of thermal reset transitions in resistive switching memories including quantum effects

    Energy Technology Data Exchange (ETDEWEB)

    Villena, M. A.; Jiménez-Molinos, F.; Roldán, J. B. [Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada (Spain); González, M. B.; Campabadal, F. [Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra (Spain); Suñé, J.; Miranda, E. [Departament d' Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra Cerdanyola del Vallès 08193 (Spain); Romera, E. [Departamento de Física Atómica, Molecular y Nuclear and Instituto Carlos I de Física Teórica y Computacional, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada (Spain)

    2014-06-07

    An in-depth study of reset processes in RRAMs (Resistive Random Access Memories) based on Ni/HfO{sub 2}/Si-n{sup +} structures has been performed. To do so, we have developed a physically based simulator where both ohmic and tunneling based conduction regimes are considered along with the thermal description of the devices. The devices under study have been successfully fabricated and measured. The experimental data are correctly reproduced with the simulator for devices with a single conductive filament as well as for devices including several conductive filaments. The contribution of each conduction regime has been explained as well as the operation regimes where these ohmic and tunneling conduction processes dominate.

  6. A measurement method for determination of dc internal resistance of batteries and supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuhong; Wu, Feng [Department of Materials Science, Beijing Science and Technology University, Beijing 100081 (China); Yang, Liuxiang; Gao, Lijun [Department of Chemistry, NanChang University, JiangXi 330031 (China); Burke, Andrew F. [Institute of Transportation, University of California, Davis, CA 95616 (United States)

    2010-02-15

    Internal resistance is an importance parameter determining the power performance of a battery or supercapacitor. An 8.5 Ah Li-ion battery and a 350 F supercapacitor were tested as examples to validate the measurement method of dc internal resistance. Voltage data were taken at 10 ms, 2 s and 30 s after the current interruption or pulse. The ac resistances at 1 kHz of the battery and supercapacitor were also measured for comparison with the dc values. Based on these tests, it is proposed that the dc internal resistance of the battery and supercapacitor be obtained from {delta}V/{delta}I where the {delta}V is the voltage change after the current interruption, and {delta}I means current change from I to 0. When the voltage change at 10 ms or less is selected, the resistance corresponds to the Ohmic resistance of the device. (author)

  7. Coexistence and competition of surface diffusion and geometric shielding in the growth of 1D bismuth nanostructures and their ohmic contact

    International Nuclear Information System (INIS)

    Tian, Ye; Jiang, Lianjun; Zhang, Xuejun; Deng, Yangbao; Deng, Shuguang

    2014-01-01

    We study the physical-vapor-deposition of 1D bismuth nanostructures. Bi nanowire elongating along [012] and/or [110] direction as well as anisotropic Bi nano-columns are physical-vapor-deposited successfully. The coexistence and competition of surface diffusion and geometric shielding are critical to their formation as well as growth mode transition among them. Since physical-vapor-deposition is a vacuum process, we make use of it to fabricate the ohmic contact to prevent the damage to the bismuth nanostructures brought by the etching to their thick surface oxide layer. (paper)

  8. Role of Ag-alloy in the thermal stability of Ag-based ohmic contact to GaN(0 0 0 1) surface

    International Nuclear Information System (INIS)

    Xiong, Zhihua; Qin, Zhenzhen; Zhao, Qian; Chen, Lanli

    2015-01-01

    First-principles calculations are performed to study Ag and Ag-alloy adsorption stability on GaN(0 0 0 1) surface. We find Ag only contact to GaN surface is unstable under high temperature. While Ag-alloy adsorption exhibits better adsorption stability and electronic properties than that of the Ag only contact,due to the enhanced interaction between Ag-alloy and GaN(0 0 0 1) surface. The Ag-alloy, particularly AgNi, is proposed to be used as very promising ohmic contact to GaN for practical applications

  9. Effect of continuous ohmic heating to inactivate Escherichia coli O157:H7, Salmonella Typhimurium and Listeria monocytogenes in orange juice and tomato juice.

    Science.gov (United States)

    Lee, S-Y; Sagong, H-G; Ryu, S; Kang, D-H

    2012-04-01

    The purpose of this study was to investigate the efficacy of continuous ohmic heating for reducing Escherichia coli O157:H7, Salmonella Typhimurium and Listeria monocytogenes in orange juice and tomato juice. Orange juice and tomato juice were treated with electric field strengths in the range of 25-40 V cm(-1) for different treatment times. The temperature of the samples increased with increasing treatment time and electric field strength. The rate of temperature change for tomato juice was higher than for orange juice at all voltage gradients applied. Higher electric field strength or longer treatment time resulted in a greater reduction of pathogens. Escherichia coli O157:H7 was reduced by more than 5 log after 60-, 90- and 180-s treatments in orange juice with 40, 35 and 30 V cm(-1) electric field strength, respectively. In tomato juice, treatment with 25 V cm(-1) for 30 s was sufficient to achieve a 5-log reduction in E. coli O157:H7. Similar results were observed in Salm. Typhimurium and L. monocytogenes. The concentration of vitamin C in continuous ohmic heated juice was significantly higher than in conventionally heated juice (P pasteurize fruit and vegetable juices in a short operating time and that the effect of inactivation depends on applied electric field strengths, treatment time and electric conductivity. © 2012 The Authors. Journal of Applied Microbiology © 2012 The Society for Applied Microbiology.

  10. Effect of frequency and waveform on inactivation of Escherichia coli O157:H7 and Salmonella enterica Serovar Typhimurium in salsa by ohmic heating.

    Science.gov (United States)

    Lee, Su-Yeon; Ryu, Sangryeol; Kang, Dong-Hyun

    2013-01-01

    The effect of frequency of alternating current during ohmic heating on electrode corrosion, heating rate, inactivation of food-borne pathogens, and quality of salsa was investigated. The impact of waveform on heating rate was also investigated. Salsa was treated with various frequencies (60 Hz to 20 kHz) and waveforms (sine, square, and sawtooth) at a constant electric field strength of 12.5 V/cm. Electrode corrosion did not occur when the frequency exceeded 1 kHz. The heating rate of the sample was dependent on frequency up to 500 Hz, but there was no significant difference (P > 0.05) in the heating rate when the frequency was increased above 1 kHz. The electrical conductivity of the sample increased with a rise in the frequency. At a frequency of 60 Hz, the square wave produced a lower heating rate than that of sine and sawtooth waves. The heating rate between waveforms was not significantly (P > 0.05) different when the frequency was >500 Hz. As the frequency increased, the treatment time required to reduce Escherichia coli O157:H7 and Salmonella enterica serovar Typhimurium to below the detection limit (1 log CFU/g) decreased without affecting product quality. These results suggest that ohmic heating can be effectively used to pasteurize salsa and that the effect of inactivation is dependent on frequency and electrical conductivity rather than waveform.

  11. Effect of electropermeabilization by ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water and apple juice.

    Science.gov (United States)

    Park, Il-Kyu; Kang, Dong-Hyun

    2013-12-01

    The effect of electric field-induced ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water (BPW) (pH 7.2) and apple juice (pH 3.5; 11.8 °Brix) was investigated in this study. BPW and apple juice were treated at different temperatures (55°C, 58°C, and 60°C) and for different times (0, 10, 20, 25, and 30 s) by ohmic heating compared with conventional heating. The electric field strength was fixed at 30 V/cm and 60 V/cm for BPW and apple juice, respectively. Bacterial reduction resulting from ohmic heating was significantly different (Pheating at 58°C and 60°C in BPW and at 55°C, 58°C, and 60°C in apple juice for intervals of 0, 10, 20, 25, and 30 s. These results show that electric field-induced ohmic heating led to additional bacterial inactivation at sublethal temperatures. Transmission electron microscopy (TEM) observations and the propidium iodide (PI) uptake test were conducted after treatment at 60°C for 0, 10, 20, 25 and 30 s in BPW to observe the effects on cell permeability due to electroporation-caused cell damage. PI values when ohmic and conventional heating were compared were significantly different (Pheating can more effectively reduce bacterial populations at reduced temperatures and shorter time intervals, especially in acidic fruit juices such as apple juice. Therefore, loss of quality can be minimized in a pasteurization process incorporating ohmic heating.

  12. Bulk and contact resistances of gas diffusion layers in proton exchange membrane fuel cells

    Science.gov (United States)

    Ye, Donghao; Gauthier, Eric; Benziger, Jay B.; Pan, Mu

    2014-06-01

    A multi-electrode probe is employed to distinguish the bulk and contact resistances of the catalyst layer (CL) and the gas diffusion layer (GDL) with the bipolar plate (BPP). Resistances are compared for Vulcan carbon catalyst layers (CL), carbon paper and carbon cloth GDL materials, and GDLs with microporous layers (MPL). The Vulcan carbon catalyst layer bulk resistance is 100 times greater than the bulk resistance of carbon paper GDL (Toray TG-H-120). Carbon cloth (CCWP) has bulk and contact resistances twice those of carbon paper. Compression of the GDL decreases the GDL contact resistance, but has little effect on the bulk resistance. Treatment of the GDL with polytetrafluoroethylene (PTFE) increases the contact resistance, but has little effect on the bulk resistance. A microporous layer (MPL) added to the GDL decreases the contact resistance, but has little effect on the bulk resistance. An equivalent circuit model shows that for channels less than 1 mm wide the contact resistance is the major source of electronic resistance and is about 10% of the total ohmic resistance associated with the membrane electrode assembly.

  13. Vertical resistivity in nanocrystalline ZnO and amorphous InGaZnO

    Science.gov (United States)

    McCandless, Jonathan P.; Leedy, Kevin D.; Schuette, Michael L.

    2018-02-01

    The goal is to gain additional insight into physical mechanisms and the role of microstructure on the formation of ohmic contacts and the reduction of contact resistance. We have measured a decreasing film resistivity in the vertical direction with increasing thickness of pulsed-laser deposited ZnO and IGZO. As the ZnO thickness increases from 122 nm to 441 nm, a reduction in resistivity from 3.29 Ω-cm to 0.364 Ω-cm occurred. The IGZO resistivity changes from 72.4 Ω-cm to 0.642 Ω-cm as the film is increased from 108nm to 219 nm. In the ZnO, the size of nanocolumnar grains increase with thickness resulting in fewer grain boundaries, and in the amorphous IGZO, the thicker region exhibits tunnel-like artifacts which may contribute to the reduced resistivity.

  14. Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

    Science.gov (United States)

    Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

    2018-03-01

    Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

  15. Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

    Science.gov (United States)

    Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

    1997-11-01

    Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

  16. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

    International Nuclear Information System (INIS)

    Zhang Jian; Yang Hui; Zhang Qilong; Dong Shurong; Luo, J. K.

    2013-01-01

    ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10 3 , better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

  17. Double diffusive magnetohydrodynamic heat and mass transfer of nanofluids over a nonlinear stretching/shrinking sheet with viscous-Ohmic dissipation and thermal radiation

    Directory of Open Access Journals (Sweden)

    Dulal Pal

    2017-03-01

    Full Text Available The study of magnetohydrodynamic (MHD convective heat and mass transfer near a stagnation-point flow over stretching/shrinking sheet of nanofluids is presented in this paper by considering thermal radiation, Ohmic heating, viscous dissipation and heat source/sink parameter effects. Non-similarity method is adopted for the governing basic equations before they are solved numerically using Runge-Kutta-Fehlberg method using shooting technique. The numerical results are validated by comparing the present results with previously published results. The focus of this paper is to study the effects of some selected governing parameters such as Richardson number, radiation parameter, Schimdt number, Eckert number and magnetic parameter on velocity, temperature and concentration profiles as well as on skin-friction coefficient, local Nusselt number and Sherwood number.

  18. On radiative-magnetoconvective heat and mass transfer of a nanofluid past a non-linear stretching surface with Ohmic heating and convective surface boundary condition

    Directory of Open Access Journals (Sweden)

    Shweta Mishra

    2016-12-01

    Full Text Available In this paper magnetoconvective heat and mass transfer characteristics of a two-dimensional steady flow of a nanofluid over a non-linear stretching sheet in the presence of thermal radiation, Ohmic heating and viscous dissipation have been investigated numerically. The model used for the nanofluid incorporates the effects of the Brownian motion and the presence of nanoparticles in the base fluid. The governing equations are transformed into a system of nonlinear ordinary differential equations by using similarity transformation. The numerical solutions are obtained by using fifth order Runge–Kutta–Fehlberg method with shooting technique. The non-dimensional parameters on velocity, temperature and concentration profiles and also on local Nusselt number and Sherwood number are discussed. The results indicate that the local skin friction coefficient decreases as the value of the magnetic parameter increases whereas the Nusselt number and Sherwood number increase as the values of the Brownian motion parameter and magnetic parameter increase.

  19. From coherent motion to localization: II. Dynamics of the spin-boson model with sub-Ohmic spectral density at zero temperature

    International Nuclear Information System (INIS)

    Wang Haobin; Thoss, Michael

    2010-01-01

    Graphical abstract: □□□ - Abstract: The dynamics of the spin-boson model at zero temperature is studied for a bath characterized by a sub-Ohmic spectral density. Using the numerically exact multilayer multiconfiguration time-dependent Hartree (ML-MCTDH) method, the population dynamics of the two-level subsystem has been investigated in a broad range of parameter space. The results show the transition of the dynamics from weakly damped coherent motion to localization upon increase of the system-bath coupling strength. Comparison of the exact ML-MCTDH simulations with the non-interacting blip approximation (NIBA) shows that the latter performs rather poorly in the weak coupling regime with small Kondo parameters. However, NIBA improves significantly upon increase in the coupling strength and is quantitatively correct in the strong coupling, nonadiabatic limit. The transition from coherent motion to localization as a function of the different parameters of the model is analyzed in some detail.

  20. Direct observation of electrothermal instability structures on intensely Ohmically heated aluminum with current flowing in a surface skin layer

    Science.gov (United States)

    Awe, Thomas

    2017-10-01

    Implosions on the Z Facility assemble high-energy-density plasmas for radiation effects and ICF experiments, but achievable stagnation pressures and temperatures are degraded by the Magneto-Rayleigh-Taylor (MRT) instability. While the beryllium liners (tubes) used in Magnetized Liner Inertial Fusion (MagLIF) experiments are astonishingly smooth (10 to 50 nm RMS roughness), they also contain distributed micron-scale resistive inclusions, and large MRT amplitudes are observed. Early in the implosion, an electrothermal instability (ETI) may provide a perturbation which greatly exceeds the initial surface roughness of the liner. Resistive inhomogeneities drive nonuniform current density and Joule heating, resulting in locally higher temperature, and thus still higher resistivity. Such unstable temperature and pressure growth produce density perturbations which seed MRT. For MagLIF liners, ETI seeding of MRT has been inferred by evaluating late-time MRT, but a direct observation of ETI is not made. ETI is directly observed on the surface of 1.0-mm-diameter solid Al rods pulsed to 1 MA in 100 ns via high resolution gated optical imaging (2 ns temporal and 3 micron spatial resolution). Aluminum 6061 alloy rods, with micron-scale resistive inclusions, consistently first demonstrate overheating from distinct, 10-micron-scale, sub-eV spots, which 5-10 ns later merge into azimuthally stretched elliptical spots and discrete strata (40-100 microns wide by 10 microns tall). Axial plasma filaments form shortly thereafter. Surface plasma can be suppressed for rods coated with dielectric, enabling extended study of the evolution of stratified ETI structures, and experimental inference of ETI growth rates. This fundamentally new and highly 3-dimensional dataset informs ETI physics, including when the ETI seed of MRT may be initiated.

  1. Resistance and resistance fluctuations in random resistor networks under biased percolation.

    Science.gov (United States)

    Pennetta, Cecilia; Reggiani, L; Trefán, Gy; Alfinito, E

    2002-06-01

    We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased processes consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady state of the RRN focusing on the properties of the non-Ohmic regime. In constant-voltage conditions, a scaling relation is found between /(0) and V/V(0), where is the average network resistance, (0) the linear regime resistance, and V0 the threshold value for the onset of nonlinearity. A similar relation is found in constant-current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the prebreakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.

  2. Time-dependent analysis of the resistivity of post-disruption tokamak plasmas

    International Nuclear Information System (INIS)

    Bakhtiari, M.; Whyte, D. G.

    2006-01-01

    The effect of neutrals on plasma resistivity due to electron-neutral collisions is studied with respect to its effect on tokamak disruptions. The resistivity of the tokamak plasma after the thermal quench is critical in determining the current quench rate, the plasma temperature, and runaway electron generation in tokamaks through the electric field, all features which are important for mitigating the damaging effect of disruptions. It is shown that the plasma resistivity during tokamak disruptions is a time-dependent parameter which may vary with disruption time scales due to the increasing fraction of neutrals. However the effect of neutrals on resistivity is found to be small for the expected neutral fraction, mostly due to power balance considerations between radiation and Ohmic heating in the plasma

  3. Positional stability of field-reversed-configurations in the presence of resistive walls

    Energy Technology Data Exchange (ETDEWEB)

    Rath, N., E-mail: nrath@trialphanenergy.com; Onofri, M.; Barnes, D. C. [Tri Alpha Energy, P.O. Box 7010, Rancho Santa Margarita, California 92688-7010 (United States)

    2016-06-15

    We show that in a field-reversed-configuration, the plasma is unstable to either transverse or axial rigid displacement, but never to both. Driving forces are found to be parallel to the direction of displacement with no orthogonal components. Furthermore, we demonstrate that the properties of a resistive wall (geometry and resistivity) in the vicinity of the plasma do not affect whether the plasma is stable or unstable, but in the case of an unstable system determine the instability growth rate. Depending on the properties of the wall, the instability growth is dominated by plasma inertia (and not affected by wall resistivity) or dominated by ohmic dissipation of wall eddy currents (and thus proportional to the wall resistivity).

  4. Bistable resistive memory behavior in gelatin-CdTe quantum dot composite film

    Science.gov (United States)

    Vallabhapurapu, Sreedevi; Rohom, Ashwini; Chaure, N. B.; Du, Shengzhi; Srinivasan, Ananthakrishnan

    2018-05-01

    Bistable memory behavior has been observed for the first time in gelatin type A thin film dispersed with functionalized CdTe quantum dots. The two terminal device with the polymer nanocomposite layer sandwiched between an indium tin oxide coated glass plate and an aluminium top electrode performs as a bistable resistive random access memory module. Butterfly shaped (O-shaped with a hysteresis in forward and reverse sweeps) current-voltage response is observed in this device. The conduction mechanism leading to the bistable electrical switching has been deduced to be a combination of ohmic and electron hopping.

  5. Resistivity switching properties of Li-doped ZnO films deposited on LaB_6 electrode

    International Nuclear Information System (INIS)

    Igityan, A.; Kafadaryan, Y.; Aghamalyan, N.; Petrosyan, S.; Badalyan, G.; Vardanyan, V.; Nersisyan, M.; Hovsepyan, R.; Palagushkin, A.; Kryzhanovsky, B.

    2015-01-01

    Current–voltage (I–V) characteristics of Al/p-ZnO:Li/LaB_6 device, measured in voltage sweep mode, show unipolar resistive switching and monostable threshold switching (URS and MTS) for different bias voltage polarities. URS could be transformed to MTS by application of reverse bias voltage. With increasing number of cycles, URS is converted to bipolar resistive switching mode which is lost after certain number of cycles, and device turns into an ordinary resistor. Analysis of linear fitting I–V curves suggests that ohmic and space charge limited current laws are responsible for conductivity mechanism of Al/p-ZnO:Li/LaB_6 device. - Highlights: • Al/p-ZnO:Li/LaB_6 memristive device is fabricated using an e-beam evaporation technique. • Current–voltage (I–V) characteristics are studied. • Type of resistive switching mode depends on the bias voltage polarity and number of switching cycles. • Resistive switching in Al/ZnO:Li/LaB_6 has an interfacial effect. • Ohmic and SCLC laws are responsible for conductivity mechanism of resistive states.

  6. Flow and volume dependence of rat airway resistance during constant flow inflation and deflation.

    Science.gov (United States)

    Rubini, Alessandro; Carniel, Emanuele Luigi; Parmagnani, Andrea; Natali, Arturo Nicola

    2011-12-01

    The aim of this study was to measure the flow and volume dependence of both the ohmic and the viscoelastic pressure dissipations of the normal rat respiratory system separately during inflation and deflation. The study was conducted in the Respiratory Physiology Laboratory in our institution. Measurements were obtained for Seven albino Wistar rats of both sexes by using the flow interruption method during constant flow inflations and deflations. Measurements included anesthesia induction, tracheostomy and positioning of a tracheal cannula, positive pressure ventilation, constant flow respiratory system inflations and deflations at two different volumes and flows. The ohmic resistance exhibited volume and flow dependence, decreasing with lung volume and increasing with flow rate, during both inflation and deflation. The stress relaxation-related viscoelastic resistance also exhibited volume and flow dependence. It decreased with the flow rate at a constant lung volume during both inflation and deflation, but exhibited a different behavior with the lung volume at a constant flow rate (i.e., increased during inflations and decreased during deflations). Thus, stress relaxation in the rat lungs exhibited a hysteretic behavior. The observed flow and volume dependence of respiratory system resistance may be predicted by an equation derived from a model of the respiratory system that consists of two distinct compartments. The equation agrees well with the experimental data and indicates that the loading time is the critical parameter on which stress relaxation depends, during both lung inflation and deflation.

  7. Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

    KAUST Repository

    Bahabry, Rabab R

    2018-01-11

    The Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.

  8. Antimicrobial Resistance

    Science.gov (United States)

    ... least 10 countries (Australia, Austria, Canada, France, Japan, Norway, Slovenia, South Africa, Sweden and the United Kingdom ... plan Global report on surveillance Country situation analysis Policy to combat antimicrobial resistance More on antimicrobial resistance ...

  9. Antimicrobial Resistance

    Science.gov (United States)

    ... can prevent and manage antimicrobial resistance. It is collaborating with partners to strengthen the evidence base and ... on the global action plan. WHO has been leading multiple initiatives to address antimicrobial resistance: World Antibiotic ...

  10. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    International Nuclear Information System (INIS)

    Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

    2014-01-01

    The electrical behaviour of graphene (Gr) contacts to Al x Ga 1−x N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al 0.25 Ga 0.75 N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ B  ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ B  ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ B ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN

  11. Antibiotic resistance

    Directory of Open Access Journals (Sweden)

    Marianne Frieri

    2017-07-01

    Full Text Available Summary: Antimicrobial resistance in bacterial pathogens is a challenge that is associated with high morbidity and mortality. Multidrug resistance patterns in Gram-positive and -negative bacteria are difficult to treat and may even be untreatable with conventional antibiotics. There is currently a shortage of effective therapies, lack of successful prevention measures, and only a few new antibiotics, which require development of novel treatment options and alternative antimicrobial therapies. Biofilms are involved in multidrug resistance and can present challenges for infection control. Virulence, Staphylococcus aureus, Clostridium difficile infection, vancomycin-resistant enterococci, and control in the Emergency Department are also discussed. Keywords: Antibiotic resistance, Biofilms, Infections, Public health, Emergency Department

  12. Lifetime limitations of ohmic, contacting RF MEMS switches with Au, Pt and Ir contact materials due to accumulation of ‘friction polymer’ on the contacts

    International Nuclear Information System (INIS)

    Czaplewski, David A; Nordquist, Christopher D; Dyck, Christopher W; Patrizi, Gary A; Kraus, Garth M; Cowan, William D

    2012-01-01

    We present lifetime limitations and failure analysis of many packaged RF MEMS ohmic contacting switches with Au–Au, Au–Ir, and Au–Pt contact materials operating with 100 µN of contact force per contact in hermetically sealed glass wall packages. All metals were tested using the same switch design in a controlled environment to provide a comparison between the performance of the different materials and their corresponding failure mechanisms. The switch lifetimes of the different contact materials varied from several hundred cycles to 200 million cycles with different mechanisms causing failures for different contact materials. Switches with Au–Au contacts failed due to adhesion when thoroughly cleaned while switches with dissimilar metal contacts (Au–Ir and Au–Pt) operated without adhesion failures but failed due to carbon accumulation on the contacts even in a clean, packaged environment as a result of the catalytic behavior of the contact materials. Switch lifetimes correlated inversely with catalytic behavior of the contact metals. The data suggests the path to increase switch lifetime is to use favorable catalytic materials as contacts, design switches with higher contact forces to break through any residual contamination, and use cleaner, probably smaller, packages. (paper)

  13. The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

    Science.gov (United States)

    Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

    2010-12-28

    Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

  14. Design and experimental results of feedback control of Ohmic-heating transformer magnetic flux by LHCD power in HT-7 Tokamak

    International Nuclear Information System (INIS)

    Yiyun Huang

    2006-01-01

    In order to make a research on long pulse or even steady state operation with non-inductive drive in plasma discharge, a new feedback control scheme instead of the previous one has been designed and operated in HT-7 [HT-7 team presented by J. Li, et al., Plasma Phys. Control. Fusion 42 (2) (2000) 135-146] Tokamak experiment, 2004. Consumption of iron-core transformer magnetic flux (MFT) is feedback controlled for the first time by power of lower hybrid current drive (LHCD) P LH , when the Ohmic-heating circuit current can maintain the plasma current I P constant with another feedback control loop, which make MFT evolve at alternating-change state to avoid flux saturation. Plasma current I P can be maintained steadily up to 120s in this operation mode at reduced plasma parameters (I P ∼50-100KA, average density n-bar e =0.4-0.5x10 19 m -3 , P LH =100-200KW). Design and experimental results are presented in the paper, which including control model analysis, configurations of control system and MFT feedback control experiments in HT-7. The high voltage power supply (HVPS) of LHCD is the main controller that regulates the LHCD power into the plasma to control the MFT

  15. The effect of correlations on the non-ohmic behavior of the small-polaron hopping conductivity in 1D and 3D disordered systems

    International Nuclear Information System (INIS)

    Dimakogianni, M; Triberis, G P

    2010-01-01

    According to percolation theory the investigation of charge transport in disordered systems is equivalent to the study of the possibility of the passage of the carriers through a random network of impedances which interconnect the different lattice sites. When the site energies are not the same, the energy of a site affects the incoming as well as the outgoing impedances connected to the given site and this gives rise to correlations between neighboring impedances. This new condition characterizes the transport process and imposes the evaluation of the average number of sites accessible by a bond from a given site for all possible configurations of sites that satisfy the percolation condition. The generalized molecular crystal model, appropriate for the study of small-polaron hopping transport in disordered systems, and the Kubo formula permit the evaluation of these impedances. Taking correlations into account, theoretical percolation considerations applicable to one-dimensional and three-dimensional disordered systems, lead to analytical expressions for the temperature and electric field dependence of the DC conductivity at high (multi-phonon-assisted hopping) and low (few-phonon-assisted hopping) temperatures. The theoretical analysis reveals the effect of correlations on the non-ohmic behavior of the small-polaron hopping conductivity and permits the evaluation of the maximum hopping distance. Quantitative estimates of this effect are presented comparing the theoretical results, including correlations with those ignoring them, previously reported, applying them to recent experimental data for a wide temperature range and from low up to moderate electric fields.

  16. Variational dynamics of the sub-Ohmic spin-boson model on the basis of multiple Davydov D{sub 1} states

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lu [Division of Materials Science, Nanyang Technological University, Singapore 639798 (Singapore); Department of Physics, Zhejiang University, Hangzhou 310027 (China); Chen, Lipeng; Zhao, Yang, E-mail: YZhao@ntu.edu.sg [Division of Materials Science, Nanyang Technological University, Singapore 639798 (Singapore); Zhou, Nengji [Department of Physics, Hangzhou Normal University, Hangzhou 310046 (China)

    2016-01-14

    Dynamics of the sub-Ohmic spin-boson model is investigated by employing a multitude of the Davydov D{sub 1} trial states, also known as the multi-D{sub 1} Ansatz. Accuracy in dynamics simulations is improved significantly over the single D{sub 1} Ansatz, especially in the weak system-bath coupling regime. The reliability of the multi-D{sub 1} Ansatz for various coupling strengths and initial conditions is also systematically examined, with results compared closely with those of the hierarchy equations of motion and the path integral Monte Carlo approaches. In addition, a coherent-incoherent phase crossover in the nonequilibrium dynamics is studied through the multi-D{sub 1} Ansatz. The phase diagram is obtained with a critical point s{sub c} = 0.4. For s{sub c} < s < 1, the coherent-to-incoherent crossover occurs at a certain coupling strength, while the coherent state recurs at a much larger coupling strength. For s < s{sub c}, only the coherent phase exists.

  17. Resistive switching properties and physical mechanism of europium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Wei; Zou, Changwei [School of Physical Science and Technology, Lingnan Normal University, Zhanjiang (China); Bao, Dinghua [State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou (China)

    2017-09-15

    A forming-free resistive switching effect was obtained in Pt/Eu{sub 2}O{sub 3}/Pt devices in which the Eu{sub 2}O{sub 3} thin films were fabricated by a chemical solution deposition method. The devices show unipolar resistive switching with excellent switching parameters, such as high resistance ratio (10{sup 7}), stable resistance values (read at 0.2 V), low reset voltage, good endurance, and long retention time (up to 10{sup 4} s). On the basis of the analysis of the current-voltage (I-V) curves and the resistance-temperature dependence, it can be concluded that the dominant conducting mechanisms were ohmic behavior and Schottky emission at low resistance state and high resistance state, respectively. The resistive switching behavior could be explained by the formation and rupture of conductive filament, which is related to the abundant oxygen vacancies generated in the deposition process. This work demonstrates the great potential opportunities of Eu{sub 2}O{sub 3} thin film in resistive switching memory applications, which might possess distinguished properties. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

    Science.gov (United States)

    Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

    2018-05-01

    Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

  19. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chun-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan (China); Tang, Jian-Fu; Su, Hsiu-Hsien [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hong, Cheng-Shong; Huang, Chih-Yu [Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

    2016-06-28

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  20. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    International Nuclear Information System (INIS)

    Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

    2016-01-01

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li 0.06 Zn 0.94 O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li + ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  1. Resistant Hypertension.

    Science.gov (United States)

    Doroszko, Adrian; Janus, Agnieszka; Szahidewicz-Krupska, Ewa; Mazur, Grzegorz; Derkacz, Arkadiusz

    2016-01-01

    Resistant hypertension is a severe medical condition which is estimated to appear in 9-18% of hypertensive patients. Due to higher cardiovascular risk, this disorder requires special diagnosis and treatment. The heterogeneous etiology, risk factors and comorbidities of resistant hypertension stand in need of sophisticated evaluation to confirm the diagnosis and select the best therapeutic options, which should consider lifestyle modifications as well as pharmacological and interventional treatment. After having excluded pseudohypertension, inappropriate blood pressure measurement and control as well as the white coat effect, suspicion of resistant hypertension requires an analysis of drugs which the hypertensive patient is treated with. According to one definition - ineffective treatment with 3 or more antihypertensive drugs including diuretics makes it possible to diagnose resistant hypertension. A multidrug therapy including angiotensin - converting enzyme inhibitors, angiotensin II receptor blockers, beta blockers, diuretics, long-acting calcium channel blockers and mineralocorticoid receptor antagonists has been demonstrated to be effective in resistant hypertension treatment. Nevertheless, optional, innovative therapies, e.g. a renal denervation or baroreflex activation, may create a novel pathway of blood pressure lowering procedures. The right diagnosis of this disease needs to eliminate the secondary causes of resistant hypertension e.g. obstructive sleep apnea, atherosclerosis and renal or hormonal disorders. This paper briefly summarizes the identification of the causes of resistant hypertension and therapeutic strategies, which may contribute to the proper diagnosis and an improvement of the long term management of resistant hypertension.

  2. Camptothecin resistance

    DEFF Research Database (Denmark)

    Brangi, M; Litman, Thomas; Ciotti, M

    1999-01-01

    . Glucuronides were found at equal levels in both parental and resistant colon cancer cell lines for epirubicin and to a lesser extent for SN-38 and mitoxantrone. Low levels of glucuronidation could also be detected in the resistant breast cancer cells. These results were confirmed by analysis of the UGT1A...

  3. Antibiotic Resistance

    DEFF Research Database (Denmark)

    Munck, Christian

    morbidity and mortality as well as an increase in the cost of treatment. Understanding how bacteria respond to antibiotic exposure gives the foundations for a rational approach to counteract antimicrobial resistance. In the work presented in this thesis, I explore the two fundamental sources...... of antimicrobial resistance: (1) adaptive mutations and (2) horizontal acquisition of resistance genes from antibiotic gene reservoirs. By studying the geno- and phenotypic changes of E. coli in response to single and drug-pair exposures, I uncover the evolutionary trajectories leading to adaptive resistance. I...... to rationally design drug combinations that limit the evolution of antibiotic resistance due to counteracting evolutionary trajectories. My results highlight that an in-depth knowledge about the genetic responses to the individual antimicrobial compounds enables the prediction of responses to drug combinations...

  4. Field and polarity dependence of time-to-resistance increase in Fe-O films studied by constant voltage stress method

    International Nuclear Information System (INIS)

    Eriguchi, Koji; Ohta, Hiroaki; Ono, Kouichi; Wei Zhiqiang; Takagi, Takeshi

    2009-01-01

    Constant voltage stress (CVS) was applied to Fe-O films prepared by a sputtering process to investigate a stress-induced resistance increase leading to a fundamental mechanism for switching behaviors. Under the CVS, an abrupt resistance increase was found for both stress polarities. A conduction mechanism after the resistance increase exhibited non-Ohmic transport. The time-to-resistance increase (t r ) under the CVS was revealed to strongly depend on stress voltage as well as the polarity. From a polarity-dependent resistance increase determined by a time-zero measurement, the voltage and polarity-dependent t r were discussed on the basis of field- and structure-enhanced thermochemical reaction mechanisms

  5. Radial transport effects on ECCD in the TCV and DIII-D tokamaks and on Ohmic discharges in the MST RFP

    International Nuclear Information System (INIS)

    Harvey, R.W.; Sauter, O.; Nikkola, P.; Prater, R.; O'Connell, R.; Forest, C.B.

    2003-01-01

    The comprehensive CQL3D Fokker-Planck/Quasilinear simulation code has been benchmarked against experiment over a wide range of electron cyclotron conditions in the DIII-D tokamak (C.C. Petty et al., 14. Topical Conf. on RF Power in Plasmas, 2002). The same code, in disagreement with experiment, gives 560 kA of ECCD for a well documented, completely ECCD-driven, 100 kA TCV shot [O. Sauter et al, PRL, 2000]. Recent work (R.W. Harvey et al, Phys. Rev. Lett., 2002) has resolved the differences as due to radial transport at a level closely consistent with ITER scaling. Transport does not substantially affect DIII-D ECCD, but at similar ECH power has an overwhelming effect on the much smaller TCV. The transport is consistent with electrostatic-type diffusion (D ρρ constant in velocity space) and not with a magnetic-type diffusion (D ρρ ∝ |v || |). Fokker-Planck simulation of Ohmic reversed field pinch (RFP) discharges in the MST device reveals transport velocity dependence stronger than |v || |) will give agreement with current and soft X-ray spectra in standard discharges, but in the higher confinement, current profile controlled PPCD discharges, transport is again electrostatic-like. This is consistent with the object of PPCD, which is to replace magnetic turbulence driven current with auxiliary CD to improve transport. The tokamak and high-confinement RFP results mutually reinforce the constant-in-velocity-space 'electrostatic-type turbulence' conclusion. The steady-state energy and toroidal current are governed by the same radial transport equation. (authors)

  6. RADIAL TRANSPORT EFFECTS ON ECCD IN THE TCV AND DIII-D TOKAMAKS AND ON OHMIC DISCHARGES IN THE MST RFP

    International Nuclear Information System (INIS)

    HARVEY, R.W.; SAUTER, O.; PRATER, R.; NIKKOLA, P.; O'CONNELL, R.; FOREST, C.B.

    2002-01-01

    The comprehensive CQL3D Fokker-Planck/Quasilinear simulation code has been benchmarked against experiment over a wide range of electron cyclotron conditions in the DIII-D tokamak (C.C. Petty et al., 14th Topical Conf. on RF Power in Plasmas, 2002). The same code, in disagreement with experiment, gives 560 kA of ECCD for a well documented, completely ECCD-driven, 100 kA TCV shot [O. Sauter et al, PRL, 2000]. Recent work (R.W. Harvey et al, Phys. Rev. Lett., 2002) has resolved the differences as due to radial transport at a level closely consistent with ITER scaling. Transport does not substantially affect DIII-D ECCD, but at similar ECH power has an overwhelming effect on the much smaller TCV. The transport is consistent with electrostatic-type diffusion (D ρρ constant in velocity-space) and not with a magnetic-type diffusion (D ρρ ∝ |v(parallel)|). Fokker-Planck simulation of Ohmic reversed field pinch (RFP) discharges in the MST device reveals transport velocity dependence stronger than |v(parallel)| will give agreement with current and soft X-ray spectra in standard discharges, but in the higher confinement, current profile controlled PPCD discharges, transport is again electrostatic-like. This is consistent with the object of PPCD, which is to replace magnetic turbulence driven current with auxiliary CD to improve transport. The tokamak and high-confinement RFP results mutually reinforce the constant-in-velocity-space ''electrostatic-type turbulence'' conclusion. The steady-state energy and toroidal current are governed by the same radial transport equation

  7. Antimicrobial Resistance

    Science.gov (United States)

    ... past two decades due to the increase in immunocompromised and elderly patients, increasing use of invasive indwelling ... aureus developing resistance to vancomycin, a very powerful antibiotic prescribed for the most intractable bacterial infections. In ...

  8. Drug Resistance

    Science.gov (United States)

    ... Drug-resistance testing is also recommended for all pregnant women with HIV before starting HIV medicines and also in some pregnant women already taking HIV medicines. Pregnant women will work with their health ...

  9. Antimicrobial resistance

    DEFF Research Database (Denmark)

    Llor, Carl; Bjerrum, Lars

    2014-01-01

    Antimicrobial resistance is a global public health challenge, which has accelerated by the overuse of antibiotics worldwide. Increased antimicrobial resistance is the cause of severe infections, complications, longer hospital stays and increased mortality. Overprescribing of antibiotics......-the-counter sale of antibiotics, the use of antimicrobial stewardship programmes, the active participation of clinicians in audits, the utilization of valid rapid point-of-care tests, the promotion of delayed antibiotic prescribing strategies, the enhancement of communication skills with patients with the aid...

  10. Steady-state resistive toroidal-field coils for tokamak reactors

    International Nuclear Information System (INIS)

    Kalnavarns, J.; Jassby, D.L.

    1979-12-01

    If spatially-averaged values of the beta ratio can reach 5 to 10% in tokamaks, as now seems likely, resistive toroidal-field coils may be advantageous for use in reactors intended for fusion-neutron applications. The present investigation has parameterized the design of steady-state water-cooled copper coils of rectangular cross section in order to maximize figures of merit such as the ratio of fusion neutron wall loading to coil power dissipation. Four design variations distinguished by different ohmic-heating coil configurations have been examined. For a wall loading of 0.5 MW/m 2 , minimum TF-coil lifetime costs (including capital and electricity costs) are found to occur with coil masses in the range 2400 to 4400 tons, giving 200 to 250 MW of resistive dissipation, which is comparable with the total power drain of the other reactor subsystems

  11. The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films

    Science.gov (United States)

    Rowtu, Srinu; Sangani, L. D. Varma; Krishna, M. Ghanashyam

    2018-02-01

    Resistive switching behavior by engineering the electrode work function and band gap of ZnTe thin films is demonstrated. The device structures Au/ZnTe/Au, Au/ZnTe/Ag, Al/ZnTe/Ag and Pt/ZnTe/Ag were fabricated. ZnTe was deposited by thermal evaporation and the stoichiometry and band gap were controlled by varying the source-substrate distance. Band gap could be varied between 1.0 eV to approximately 4.0 eV with the larger band gap being attributed to the partial oxidation of ZnTe. The transport characteristics reveal that the low-resistance state is ohmic in nature which makes a transition to Poole-Frenkel defect-mediated conductivity in the high-resistance states. The highest R off-to- R on ratio achieved is 109. Interestingly, depending on stoichiometry, both unipolar and bipolar switching can be realized.

  12. Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

    Science.gov (United States)

    Lee, N. J.; Kang, T. S.; Hu, Q.; Lee, T. S.; Yoon, T.-S.; Lee, H. H.; Yoo, E. J.; Choi, Y. J.; Kang, C. J.

    2018-06-01

    Tri-state resistive switching characteristics of bilayer resistive random access memory devices based on manganese oxide (MnO)/tantalum oxide (Ta2O5) have been studied. The current–voltage (I–V) characteristics of the Ag/MnO/Ta2O5/Pt device show tri-state resistive switching (RS) behavior with a high resistance state (HRS), intermediate resistance state (IRS), and low resistance state (LRS), which are controlled by the reset process. The MnO/Ta2O5 film shows bipolar RS behavior through the formation and rupture of conducting filaments without the forming process. The device shows reproducible and stable RS both from the HRS to the LRS and from the IRS to the LRS. In order to elucidate the tri-state RS mechanism in the Ag/MnO/Ta2O5/Pt device, transmission electron microscope (TEM) images are measured in the LRS, IRS and HRS. White lines like dendrites are observed in the Ta2O5 film in both the LRS and the IRS. Poole–Frenkel conduction, space charge limited conduction, and Ohmic conduction are proposed as the dominant conduction mechanisms for the Ag/MnO/Ta2O5/Pt device based on the obtained I–V characteristics and TEM images.

  13. From TER to trans- and paracellular resistance: lessons from impedance spectroscopy.

    Science.gov (United States)

    Günzel, Dorothee; Zakrzewski, Silke S; Schmid, Thomas; Pangalos, Maria; Wiedenhoeft, John; Blasse, Corinna; Ozboda, Christopher; Krug, Susanne M

    2012-06-01

    In epithelia and endothelia, overall resistance (TER) is determined by all ion-conductive structures, such as membrane channels, tight junctions, and the intercellular space, whereas the epithelial capacitance is due to the hydrophobic phase of the plasma membrane. Impedance means alternating current resistance and, in contrast to ohmic resistance, takes into account that, e.g., capacitors become increasingly conductive with increasing frequency. Impedance spectroscopy uses the association of the capacitance with the transcellular pathway to distinguish between this capacitive pathway and purely conductive components (tight junctions, subepithelium). In detail, one-path impedance spectroscopy distinguishes the resistance of the epithelium from the resistance of subepithelial tissues. Beyond that, two-path impedance spectroscopy allows for the separation of paracellular resistance (governed by tight junctional properties) from transcellular resistance (determined by conductive structures residing in the cell membranes). The present paper reviews the basic principles of these techniques, some historic milestones, as well as recent developments in epithelial physiology. © 2012 New York Academy of Sciences.

  14. Requirements for active resistive wall mode (RWM) feedback control

    International Nuclear Information System (INIS)

    In, Y; Kim, J S; Chu, M S; Jackson, G L; La Haye, R J; Strait, E J; Liu, Y Q; Marrelli, L; Okabayashi, M; Reimerdes, H

    2010-01-01

    The requirements for active resistive wall mode (RWM) feedback control have been systematically investigated and established using highly reproducible current-driven RWMs in ohmic discharges in DIII-D. The unambiguous evaluation of active RWM feedback control was not possible in previous RWM studies primarily due to the variability of the onset of the pressure-driven RWMs; the stability of the pressure-driven RWM is thought to be sensitive to various passive stabilization mechanisms. Both feedback control specifications and physics requirements for RWM stabilization have been clarified using the current-driven RWMs in ohmic discharges, when little or no passive stabilization effects are present. The use of derivative gain on top of proportional gain is found to be advantageous. An effective feedback control system should be equipped with a power supply with bandwidth greater than the RWM growth rate. It is beneficial to apply a feedback field that is toroidally phase-shifted from the measured RWM phase in the same direction as the plasma current. The efficacy of the RWM feedback control will ultimately be determined by the plasma fluctuations on internal diagnostics, as well as on external magnetics. The proximity of the feedback coils to the plasma appears to be an important factor in determining the effectiveness of the RWM feedback coils. It is desirable that an RWM feedback control system simultaneously handles error field correction at a low frequency, along with direct RWM feedback at a high frequency. There is an indication of the influence of a second least stable RWM, which had been theoretically predicted but never identified in experiments. A preliminary investigation based on active MHD spectroscopic measurement showed a strong plasma response around 400 Hz where the typical plasma response associated with the first least stable RWM was expected to be negligible. Present active feedback control requirements are based on a single mode assumption, so the

  15. Resistant hypertension.

    Science.gov (United States)

    Wei, Fang-Fei; Zhang, Zhen-Yu; Huang, Qi-Fang; Yang, Wen-Yi; Staessen, Jan A

    2018-06-15

    The publication of the first non-randomised proof-of-concept trial of renal denervation as a treatment modality in treatment-resistant hypertension set the stage for a search for novel devices with the expectation that technology would reduce the burden of hypertension by reducing or eliminating the costly and lifelong use of blood pressure lowering medications. As we demonstrate in this review, this idea so attractive to manufacturers and invasive cardiologists and radiologists overlooked decades of careful pathophysiological research in a disease, which still remains enigmatic but remains the major cause of cardiovascular mortality worldwide. To make our point, we first reviewed the prevalence and risks associated with treatment-resistant hypertension. Next, we highlighted the key points required for the diagnosis of treatment-resistant hypertension, including the recording of the ambulatory blood pressure and the assessment of adherence to medication. Finally, we summarised new insights in the management of treatment-resistant hypertension by medication and devices and in the future research. Throughout our review, we focused on new evidence became available since 2013. Our conclusion is that optimising medical treatment based on simple algorithms remains the state of the art in treatment-resistant hypertension.

  16. Anticoagulant Resistance

    DEFF Research Database (Denmark)

    Heiberg, Ann-Charlotte

    Although sewer rat control is carried out in more than 80 % of all Danish municipalities, with usage of large amounts of anticoagulant rodenticides, knowledge on anticoagulant resistance among rats living in the sewers is limited. As rat problems in urban areas are believed to be related to sewer...... problems (70-90 % in UK and DK) unawareness of resistance amongst these populations of Brown rats may constitute a future control problem and knowledge on this issue has become crucial. Rats were captured in sewers from seven different locations in the suburban area of Copenhagen. Locations was chosen...... to represent different sewer rat management strategies i) no anticoagulants for approx. 20 years ii) no anticoagulants for the last 5 years and iii) continuous control for many years. Animals were tested for resistance to bromadiolone by Blood-Clotting Response test, as bromadiolone is the most frequently used...

  17. Reducing Resistance

    DEFF Research Database (Denmark)

    Lindell, Johanna

    care may influence decisions on antibiotic use. Based on video-and audio recordings of physician-patient consultations it is investigated how treatment recommendations are presented, can be changed, are forecast and explained, and finally, how they seemingly meet resistance and how this resistance......Antibiotic resistance is a growing public health problem both nationally and internationally, and efficient strategies are needed to reduce unnecessary use. This dissertation presents four research studies, which examine how communication between general practitioners and patients in Danish primary...... is responded to.The first study in the dissertation suggests that treatment recommendations on antibiotics are often done in a way that encourages patient acceptance. In extension of this, the second study of the dissertation examines a case, where acceptance of such a recommendation is changed into a shared...

  18. Drug resistance

    NARCIS (Netherlands)

    Gorter, J.A.; Potschka, H.; Noebels, J.L.; Avoli, M.; Rogawski, M.A.; Olsen, R.W.; Delgado-Escueta, A.V.

    2012-01-01

    Drug resistance remains to be one of the major challenges in epilepsy therapy. Identification of factors that contribute to therapeutic failure is crucial for future development of novel therapeutic strategies for difficult-to-treat epilepsies. Several clinical studies have shown that high seizure

  19. The role of contact resistance in graphene field-effect devices

    Science.gov (United States)

    Giubileo, Filippo; Di Bartolomeo, Antonio

    2017-08-01

    The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.

  20. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... video) Animation of Antimicrobial Resistance (text version) Arabic Translation of Animation of Antimicrobial Resistance Chinese Translation of Animation of Antimicrobial Resistance French Translation of ...

  1. Effects of an Anomalous Resistivity on the Power Deposition by Alfven Waves in Pre-Heated Spherical Tokamaks

    Energy Technology Data Exchange (ETDEWEB)

    Bruma, C.; Cuperman, S.; Komoshvili, K. [Tel Aviv Univ., Ramat Aviv (Israel)

    2005-08-01

    As it is the case with tokamaks in general, and moreover, due to their specific geometry (limited space for inboard solenoid magnets), low aspect ratio (spherical) tokamaks (STs) require additional auxiliary non-ohmic current startup and maintenance, generation of internal transport barriers (associated with underlying sheared poloidal flows and quasi-stationary radial electric fields), plasma heating, etc. One of the options to generate these necessary effects in STs is by the aid of rf waves launched from a suitable external antenna; in this option the effects just mentioned are a consequence of ponderomotive forces resulting from the interaction of the rf waves with the plasma. Since experimental data on STs (viz., the START-device) reveal the presence of an anomalous plasma resistivity (about four times Spitzer's one), we carried out a systematic parametric investigation of the effects of an increased plasma resistivity on the magnitude and spatial localization of the resulting power deposition.

  2. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin it More sharing options ... of Animation of Antimicrobial Resistance More in Antimicrobial ... Antimicrobial Resistance Monitoring System About NARMS 2015 NARMS Integrated ...

  3. Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

    Science.gov (United States)

    Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

    2018-05-01

    We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

  4. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.

    2013-12-12

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  5. Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

    Directory of Open Access Journals (Sweden)

    Shuxiang Wu

    2013-12-01

    Full Text Available Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  6. Insulin Resistance

    DEFF Research Database (Denmark)

    Jensen, Benjamin Anderschou Holbech

    Insulin resistance (IR) is escalating with alarming pace and is no longer restricted to westernized countries. As a forerunner for some of the most serious threats to human health including metabolic syndrome, cardiovascular diseases, and type 2-diabetes, the need for new treatment modalities...... interventions. We further show that improving the inflammatory toning, using fish oil as fat source, protects mice against diet induced obesity and -inflammation while preserving insulin sensitivity, even in the absence of free fatty acid receptor 4. Conversely, HFD-induced intestinal dysbiosis is associated...

  7. Identification of electrical resistance of fresh state concrete for nondestructive setting process monitoring

    International Nuclear Information System (INIS)

    Shin, Sung Woo

    2015-01-01

    Concrete undergoes significant phase changes from liquid to solid states as hydration progresses. These phase changes are known as the setting process. A liquid state concrete is electrically conductive because of the presence of water and ions. However, since the conductive elements in the liquid state of concrete are consumed to produce non-conductive hydration products, the electrical conductivity of hydrating concrete decreases during the setting process. Therefore, the electrical properties of hydrating concrete can be used to monitor the setting process of concrete. In this study, a parameter identification method to estimate electrical parameters such as ohmic resistance of concrete is proposed. The effectiveness of the proposed method for monitoring the setting process of concrete is experimentally validated

  8. Effects of electrode material and configuration on the characteristics of planar resistive switching devices

    KAUST Repository

    Peng, H.Y.

    2013-11-13

    We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories. 2013 Author(s).

  9. Resistance welding

    DEFF Research Database (Denmark)

    Bay, Niels; Zhang, Wenqi; Rasmussen, Mogens H.

    2003-01-01

    Resistance welding comprises not only the well known spot welding process but also more complex projection welding operations, where excessive plastic deformation of the weld point may occur. This enables the production of complex geometries and material combinations, which are often not possible...... to weld by traditional spot welding operations. Such joining processes are, however, not simple to develop due to the large number of parameters involved. Development has traditionally been carried out by large experimental investigations, but the development of a numerical programme system has changed...... this enabling prediction of the welding performance in details. The paper describes the programme in short and gives examples on industrial applications. Finally investigations of causes for failure in a complex industrial joint of two dissimilar metals are carried out combining numerical modelling...

  10. Antibiotic Resistance

    DEFF Research Database (Denmark)

    Hansen, Malene Plejdrup; Hoffmann, Tammy C; McCullough, Amanda R

    2015-01-01

    hygiene, and possibly vaccination and exercise, may be effective. Also, a large range of complementary and alternative medicines (e.g. zinc, vitamin C and probiotics) are proposed for preventing and treating ARIs, but evidence for efficacy is scarce. General practitioners' (GPs) attitudes towards...... wrong. Shared decision making might be a solution, as it enables clinician and patient to participate jointly in making a health decision, having discussed the options together with the evidence for their harms as well as benefits. Furthermore, GPs' diagnostic uncertainty - often leading...... will greatly improve the use of antibiotics for ARIs. However, used in concert, combinations are likely to enable clinicians and health care systems to implement the strategies that will reduce antimicrobial resistance in the future....

  11. Resisting dehumanization

    DEFF Research Database (Denmark)

    Lassen, Inger Marie

    2018-01-01

    Recent years have seen an increase in the influx of asylum-seekers in Scandinavia, and in Denmark this has led to ever-tighter immigration control. This article discusses emerging practices of refugee solidarity and resistance to hegemonic migration policy in Danish civil society in the wake...... of what has been referred to as the European refugee crisis. It further reflects upon what it means to be a Danish citizen facing the dilemma of law-abiding conduct versus human decency, in line with what Foucault (1983) referred to as ‘ethical self-formation’. This is illustrated through a case study...... of an incident from September 2015, when a member of a Danish City Council offered private shelter to immigrants who were on their way to Norway. The incident led to legal proceedings in August 2016 for what the defendant referred to as ‘the offense of helping fellow human beings in need’. The study is informed...

  12. Crossover from normal (N) Ohmic subdivision to superconducting (S) equipartition of current in parallel conductors at the N-S transition: Theory

    OpenAIRE

    Kumar, N.

    2007-01-01

    The recently observed (1) equipartition of current in parallel at and below the Normal-Superconducting (N-S) transition can be understood in terms of a Landau-Ginzburg order-parameter phenomenology. This complements the explanation proposed earlier (1) based on the flux-flow resistance providing a nonlinear negative current feedback towards equipartition when the transition is approached from above. The present treatment also unifies the usual textbook inductive subdivision expected much belo...

  13. Resistive switching characteristics of solution-processed Al-Zn-Sn-O films annealed by microwave irradiation

    Science.gov (United States)

    Kim, Tae-Wan; Baek, Il-Jin; Cho, Won-Ju

    2018-02-01

    In this study, we employed microwave irradiation (MWI) at low temperature in the fabrication of solution-processed AlZnSnO (AZTO) resistive random access memory (ReRAM) devices with a structure of Ti/AZTO/Pt and compared the memory characteristics with the conventional thermal annealing (CTA) process. Typical bipolar resistance switching (BRS) behavior was observed in AZTO ReRAM devices treated with as-deposited (as-dep), CTA and MWI. In the low resistance state, the Ohmic conduction mechanism describes the dominant conduction of these devices. On the other hand, the trap-controlled space charge limited conduction (SCLC) mechanism predominates in the high resistance state. The AZTO ReRAM devices processed with MWI showed larger memory windows, uniform distribution of resistance state and operating voltage, stable DC durability (>103 cycles) and stable retention characteristics (>104 s). In addition, the AZTO ReRAM devices treated with MWI exhibited multistage storage characteristics by modulating the amplitude of the reset bias, and eight distinct resistance levels were obtained with stable retention capability.

  14. Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell

    International Nuclear Information System (INIS)

    Pan, R.K.; Zhang, T.J.; Wang, J.Y.; Wang, J.Z.; Wang, D.F.; Duan, M.G.

    2012-01-01

    The 80-nm-thickness BaTiO 3 (BT) thin film was prepared on the Pt/Ti/SiO 2 /Si substrate by the RF magnetron sputtering technique. The Pt/BT/Pt/Ti/SiO 2 /Si structure was investigated using X-ray diffraction and scanning electron microscopy. The current–voltage characteristic measurements were performed. The bipolar resistive switching behavior was found in the Pt/BT/Pt cell. The current–voltage curves were well fitted in different voltage regions at the high resistance state (HRS) and the low resistance state (LRS), respectively. The conduction mechanisms are concluded to be Ohmic conduction and Schottky emission at the LRS, while space-charge-limited conduction and Poole–Frenkel emission at the HRS. The electroforming and switching processes were explained in terms of the valence change mechanism, in which oxygen vacancies play a key role in forming conducting paths. - Highlights: ►Pt/BaTiO 3 /Pt cell shows the bipolar resistive switching behavior. ►The current–voltage curves were well fitted for different conduction mechanisms. ►The electroforming and switching processes were explained.

  15. Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

    Energy Technology Data Exchange (ETDEWEB)

    Shaygan, Mehrdad; Otto, Martin; Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany); Chavarin, Carlos A. [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany); Innovations for High Performance Microelectronics, IHP GmbH, Frankfurt (Oder) (Germany); Bacher, Gerd; Mertin, Wolfgang [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany)

    2017-11-15

    The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance down to 130 Ωμm. The contact resistance is found to be stable for annealing temperatures up to 150 C enabling further device processing. Using this contact scheme for edge contacts, a field effect transistor based on CVD graphene with a high transconductance of 0.63 mS/μm at 1 V bias voltage is fabricated. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Electrical resistivity measurements to predict abrasion resistance

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 31; Issue 2. Electrical resistivity measurements to predict abrasion resistance of rock aggregates ... It was seen that correlation coefficients were increased for the rock classes. In addition ...

  17. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin it More sharing options ... CVM) produced a nine-minute animation explaining how antimicrobial resistance both emerges and proliferates among bacteria. Over time, ...

  18. Combating Antibiotic Resistance

    Science.gov (United States)

    ... Bacteria Phasing Out Certain Antibiotic Use in Farm Animals FDA: Cutting-Edge Technology Sheds Light on Antibiotic Resistance For More Information Antibiotics and Antibiotic Resistance Antimicrobial Resistance Information for Consumers and Health Professionals CDC: ...

  19. Hydraulic resistance of biofilms

    KAUST Repository

    Dreszer, C.; Vrouwenvelder, Johannes S.; Paulitsch-Fuchs, Astrid H.; Zwijnenburg, Arie; Kruithof, Joop C.; Flemming, Hans Curt

    2013-01-01

    resistance is very low compared to the expected biofilm resistance and, thus, biofilm resistance can be determined accurately. Transmembrane pressure drop was monitored. As biofilm parameters, thickness, total cell number, TOC, and extracellular polymeric

  20. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin it More sharing options ... produced a nine-minute animation explaining how antimicrobial resistance both emerges and proliferates among bacteria. Over time, ...

  1. HIV Resistance Testing

    Science.gov (United States)

    ... 14, 2016 Select a Language: Fact Sheet 126 HIV Resistance Testing WHAT IS RESISTANCE? HOW DOES RESISTANCE ... ARVs. If you miss doses of your medications, HIV will multiply more easily. More mutations will occur. ...

  2. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin it More sharing ... CVM) produced a nine-minute animation explaining how antimicrobial resistance both emerges and proliferates among bacteria. Over ...

  3. Induced resistance: an enhancement of basal resistance?

    NARCIS (Netherlands)

    Vos, M. de; Robben, C.; Pelt, J.A. van; Loon, L.C. van; Pieterse, C.M.J.

    2002-01-01

    Upon primary pathogen attack, plants activate resistance mechanisms at the site of infection. Besides this so-called basal resistance, plants have also the ability to enhance their defensive capacity against future pathogen attack. There are at least two types of biologically induced resistance.

  4. Animation of Antimicrobial Resistance

    Science.gov (United States)

    ... Animal & Veterinary Cosmetics Tobacco Products Animal & Veterinary Home Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin ...

  5. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Animal & Veterinary Cosmetics Tobacco Products Animal & Veterinary Home Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin ...

  6. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... More in Antimicrobial Resistance National Antimicrobial Resistance Monitoring System ... If you need help accessing information in different file formats, see Instructions for Downloading ...

  7. Applications of electrical resistance tomography to subsurface environmental restoration

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez, A.L. [Lawrence Livermore National Lab., CA (United States); Daily, W.D.

    1994-11-15

    We are developing a new imaging technique, Electrical Resistance Tomography (ERT), to map subsurface liquids as flow occurs during natural or clean-up processes and to map geologic structure. Natural processes (such as surface water infiltrating the vadose zone) and man-induced processes (such as tank leaks and clean-up processes such as steam injection), can create changes in a soil`s electrical properties that are readily measured. We have conducted laboratory and a variety of field experiments to investigate the capabilities and limitations of ERT for imaging underground structures and processes. In the last four years we have used ERT to successfully monitor several field processes including: a subsurface steam injection process (for VOC removal), an air injection process (below the water table) for VOC removal, water infiltration through the vadose zone, radio-frequency heating, ohmic heating, and tank and pond leaks. The information derived from ERT can be used by remediation projects to: detect and locate leaks, determine the effectiveness of clean-up processes, select appropriate clean-up alternatives, and to verify the installation and performance of subsurface barriers.

  8. Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

    Energy Technology Data Exchange (ETDEWEB)

    Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

    2016-01-04

    We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

  9. Bipolar resistive switching properties of Hf{sub 0.5}Zr{sub 0.5}O{sub 2} thin film for flexible memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zhipeng; Zhu, Jun; Zhou, Yunxia; Liu, Xingpeng [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu (China)

    2018-01-15

    An Au/Ni/Hf{sub 0.5}Zr{sub 0.5}O{sub 2}/Au flexible memory device fabricated on a polyethylene terephthalate substrate was studied for flexible resistive random access memory applications. A typical bipolar resistive switching behavior was revealed with an OFF/ON ratio of approximately 15. The reproducibility and uniformity were investigated using 100 repetitive write/erase cycles. The retention property did not degrade for up to 5 x 10{sup 4} s, and the resistive switching properties did not degrade even under bending conditions, which indicated good mechanical flexibility. The current-voltage characteristics of the memory device show a Poole-Frenkel emission conduction mechanism in the high-voltage region in the high-resistance state, while in the low-voltage region, the Ohmic contact and space charge limit current responded to the low-resistance state and high-resistance state, respectively. Combined with the conductance mechanism, the resistive switching behavior is attributed to conductive filaments forming and rupturing due to oxygen vacancies migrating under the external driving electric field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. High-performance flexible resistive memory devices based on Al2O3:GeOx composite

    Science.gov (United States)

    Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

    2018-05-01

    In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

  11. Comparison of Power Supply Pumping of Switch-Mode Audio Power Amplifiers with Resistive Loads and Loudspeakers as Loads

    DEFF Research Database (Denmark)

    Knott, Arnold; Petersen, Lars Press

    2013-01-01

    Power supply pumping is generated by switch-mode audio power amplifiers in half-bridge configuration, when they are driving energy back into their source. This leads in most designs to a rising rail voltage and can be destructive for either the decoupling capacitors, the rectifier diodes...... in the power supply or the power stage of the amplifier. Therefore precautions are taken by the amplifier and power supply designer to avoid those effects. Existing power supply pumping models are based on an ohmic load attached to the amplifier. This paper shows the analytical derivation of the resulting...... waveforms and extends the model to loudspeaker loads. Measurements verify, that the amount of supply pumping is reduced by a factor of 4 when comparing the nominal resistive load to a loudspeaker. A simplified and more accurate model is proposed and the influence of supply pumping on the audio performance...

  12. Resistance to Powdery Mildews

    DEFF Research Database (Denmark)

    Siwoszek, Agnieszka Izabela

    in majority of them. Resistance to barley powdery mildew in the field is controlled by use of resistant varieties in a combination with fungicides. Early disease management is crucial for effective control. Yet, the pathogen commonly develops fungicide resistance due to simple point mutations. Several studies...... protection. In the present study, I provide an overview of the current knowledge about plant pathogens and plant disease resistance. I use Arabidopsis as a model to investigate the mechanism of non-host resistance, presumed to be the most durable and broad-spectrum form of resistance. I attempt to determine...

  13. Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

    Science.gov (United States)

    Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

    2018-05-01

    A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

  14. Oxidation-resistant cermet

    Science.gov (United States)

    Phillips, W. M.

    1977-01-01

    Chromium metal alloys and chromium oxide ceramic are combined to produce cermets with oxidation-resistant properties. Application of cermets includes use in hot corrosive environments requiring strong resistive materials.

  15. Resistance seam welding

    International Nuclear Information System (INIS)

    Schueler, A.W.

    1977-01-01

    The advantages and disadvantages of the resistance seam welding process are presented. Types of seam welds, types of seam welding machines, seam welding power supplies, resistance seam welding parameters and seam welding characteristics of various metals

  16. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... how antimicrobial resistance both emerges and proliferates among bacteria. Over time, the use of antimicrobial drugs will result in the development of resistant strains of bacteria, complicating clinician's efforts to select the appropriate antimicrobial ...

  17. Electrical Methods: Resistivity Methods

    Science.gov (United States)

    Surface electrical resistivity surveying is based on the principle that the distribution of electrical potential in the ground around a current-carrying electrode depends on the electrical resistivities and distribution of the surrounding soils and rocks.

  18. Insulin Resistance and Prediabetes

    Science.gov (United States)

    ... Your Baby is Born Monogenic Diabetes Insulin Resistance & Prediabetes Insulin resistance and prediabetes occur when your body ... will stay in the healthy range. What is prediabetes? Prediabetes means your blood glucose levels are higher ...

  19. Antimicrobial (Drug) Resistance

    Science.gov (United States)

    ... with facebook share with twitter share with linkedin Antimicrobial (Drug) Resistance Go to Information for Researchers ► Credit: ... and infectious diseases. Why Is the Study of Antimicrobial (Drug) Resistance a Priority for NIAID? Over time, ...

  20. CONFERENCE REPORT ANTIRETROVIRAL RESISTANCE

    African Journals Online (AJOL)

    2004-08-02

    Aug 2, 2004 ... development of new agents with potential clinical utility for treating resistant ... data on the emergence of resistance among Thai women given zidovudine ... had achieved full virological suppression (viral load. < 50 copies/ml).

  1. Resistance to Linezolid

    DEFF Research Database (Denmark)

    Vester, Birte; Ntokou, Eleni

    2017-01-01

    Linezolid is an antimicrobial agent that binds to the bacterial ribosome and thereby inhibits protein synthesis. Soon after its release as a clinical drug, it became clear that bacteria could become resistant to linezolid. The resistance mechanisms are mainly causing alteration of the drug target...... site, but probably efflux might also play a role. The resistance is still rare in surveillance studies, but outbreaks of resistant clones from hospitals have been observed. So far the main mechanisms of resistance are occurrence of mutations in ribosomal genes or obtaining plasmids with a gene coding...... for a methyltransferase providing resistance. The most obvious way to avoid resistance may be development of derivatives of linezolid overcoming the known resistance mechanisms....

  2. Resisting Organizational Change

    OpenAIRE

    Andersson, Gunnar

    2015-01-01

    We are continuously reminded of how change induces controversy and resistance, regardless of support. We repeatedly experience resistance in difficulties of implementation, little progress, and poor results, rather than increased productivity as anticipated. In a detailed account of how change plays out, a mosaic of what resistance looks like emerges. The picture is both familiar and absolutely concrete, and challenges the structural assumptions and dichotomies on support and resistance in an...

  3. Antibiotic resistance reservoirs

    NARCIS (Netherlands)

    Versluis, Dennis

    2016-01-01

    One of the major threats to human health in the 21st century is the emergence of pathogenic bacteria that are resistant to multiple antibiotics, thereby limiting treatment options. An important route through which pathogens become resistant is via acquisition of resistance genes from

  4. Resisting Mind Control.

    Science.gov (United States)

    Anderson, Susan M.; Zimbardo, Philip G.

    1980-01-01

    Provides conceptual analyses of mind control techniques along with practical advice on how to resist these techniques. The authors stress that effective mind control stems more from everyday social relations than from exotic technological gimmicks. Suggestions are given for resisting persuasion, resisting systems, and challenging the system.…

  5. Ultrasensitive NO2 Sensor Based on Ohmic Metal-Semiconductor Interfaces of Electrolytically Exfoliated Graphene/Flame-Spray-Made SnO2 Nanoparticles Composite Operating at Low Temperatures.

    Science.gov (United States)

    Tammanoon, Nantikan; Wisitsoraat, Anurat; Sriprachuabwong, Chakrit; Phokharatkul, Ditsayut; Tuantranont, Adisorn; Phanichphant, Sukon; Liewhiran, Chaikarn

    2015-11-04

    In this work, flame-spray-made undoped SnO2 nanoparticles were loaded with 0.1-5 wt % electrolytically exfoliated graphene and systematically studied for NO2 sensing at low working temperatures. Characterizations by X-ray diffraction, transmission/scanning electron microscopy, and Raman and X-ray photoelectron spectroscopy indicated that high-quality multilayer graphene sheets with low oxygen content were widely distributed within spheriodal nanoparticles having polycrystalline tetragonal SnO2 phase. The 10-20 μm thick sensing films fabricated by spin coating on Au/Al2O3 substrates were tested toward NO2 at operating temperatures ranging from 25 to 350 °C in dry air. Gas-sensing results showed that the optimal graphene loading level of 0.5 wt % provided an ultrahigh response of 26,342 toward 5 ppm of NO2 with a short response time of 13 s and good recovery stabilization at a low optimal operating temperature of 150 °C. In addition, the optimal sensor also displayed high sensor response and relatively short response time of 171 and 7 min toward 5 ppm of NO2 at room temperature (25 °C). Furthermore, the sensors displayed very high NO2 selectivity against H2S, NH3, C2H5OH, H2, and H2O. Detailed mechanisms for the drastic NO2 response enhancement by graphene were proposed on the basis of the formation of graphene-undoped SnO2 ohmic metal-semiconductor junctions and accessible interfaces of graphene-SnO2 nanoparticles. Therefore, the electrolytically exfoliated graphene-loaded FSP-made SnO2 sensor is a highly promising candidate for fast, sensitive, and selective detection of NO2 at low operating temperatures.

  6. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.

    Science.gov (United States)

    Wang, Lai-Guo; Cao, Zheng-Yi; Qian, Xu; Zhu, Lin; Cui, Da-Peng; Li, Ai-Dong; Wu, Di

    2017-02-22

    Al 2 O 3 - or HfO 2 -based nanocomposite structures with embedded CoPt x nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPt x NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPt x NCs, ALD-derived Pt/oxide/100 cycle-CoPt x NCs/TiN/SiO 2 /Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥10 2 ) of OFF/ON states, better switching endurance up to 10 4 cycles, and longer data retention over 10 5 s. The possible resistive switching mechanism based on nanocomposite structures of oxide/CoPt x NCs has been proposed. The dominant conduction mechanisms in low- and high-resistance states of oxide-based device units with embedded CoPt x NCs are Ohmic behavior and space-charge-limited current, respectively. The insertion of CoPt x NCs can effectively improve the formation of conducting filaments due to the CoPt x NC-enhanced electric field intensity. Besides excellent resistive switching performances, the nanocomposite structures also simultaneously present ferromagnetic property. This work provides a flexible pathway by combining PEALD and TALD compatible with state-of-the-art Si-based technology for multifunctional electronic devices applications containing RRAM.

  7. Development and application of nuclear radiation detector made from high resistivity silicon and compound semiconductor

    International Nuclear Information System (INIS)

    Ding Honglin; Zhang Xiufeng; Zhang Wanchang; Li Jiang

    1995-11-01

    The development of high resistivity silicon detectors and compound semiconductor detectors as well as their application in nuclear medicine are described. It emphasizes on several key techniques in fabricating detectors in order to meet their application in nuclear medicine. As for a high resistivity silicon detector, its counting rate to 125 I 28.5 keV X-ray has to be improved. So employing a conic mesa structure can increase the thickness of samples, and can raise the electric field of collecting charges under the same bias voltage. As for a GaAs detector, its performance of collecting charges has to be improved. So the thicknesses of GaAs samples are decreased and proper thermal treatment to make Ni-Ge-Au ohmic contacts are employed. Applying a suitable reverse bias voltage can obtain a fully depleted detector, and can obtain a lower forward turn-on voltage and a thinner weak electric field region. After resolving these key techniques, the performance of GaAs detectors has been distinctly improved. The count rate to 125 I X-ray has increased by three or five times under the same testing condition and background circumstance (2 refs., 8 figs., 3 tabs.)

  8. Transparent resistive switching memory using aluminum oxide on a flexible substrate

    International Nuclear Information System (INIS)

    Yeom, Seung-Won; Kim, Tan-Young; Ha, Hyeon Jun; Ju, Byeong-Kwon; Shin, Sang-Chul; Shim, Jae Won; Lee, Yun-Hi

    2016-01-01

    Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al 2 O 3 -based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400–800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al 2 O 3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole–Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al 2 O 3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices. (letter)

  9. In-situ electric resistance measurements and annealing effects of graphite exposed to swift heavy ions

    International Nuclear Information System (INIS)

    Fernandes, Sandrina; Pellemoine, Frederique; Tomut, Marilena; Avilov, Mikhail; Bender, Markus; Boulesteix, Marine; Krause, Markus; Mittig, Wolfgang; Schein, Mike; Severin, Daniel; Trautmann, Christina

    2013-01-01

    To study the suitability of using graphite as material for high-power targets for rare isotope production at the future Facility for Rare Isotope Beams (FRIB) in the USA and at the Facility for Antiproton and Ion Research (FAIR) in Germany, thin foils of polycrystalline graphite were exposed to 8.6-MeV/u Au ions reaching a maximum fluence of 1 × 10 15 ions/cm 2 . Foil irradiation temperatures of up to 1800 °C were obtained by ohmic heating. In-situ monitoring of the electrical resistance of the graphite foils during and after irradiation provided information on beam-induced radiation damage. The rate of electrical resistance increase as a function of fluence was found to decrease with increasing irradiation temperature, indicating a more efficient annealing of the irradiation-produced defects. This is corroborated by the observation that graphite foils irradiated at temperatures below about 800 °C showed cracks and pronounced deformations, which did not appear on the samples irradiated at higher temperatures

  10. A solvable self-similar model of the sausage instability in a resistive Z pinch

    International Nuclear Information System (INIS)

    Lampe, M.

    1991-01-01

    A solvable model is developed for the linearized sausage mode within the context of resistive magnetohydrodynamics. The model is based on the assumption that the fluid motion of the plasma is self-similar, as well as several assumptions pertinent to the limit of wavelength long compared to the pinch radius. The perturbations to the magnetic field are not assumed to be self-similar, but rather are calculated. Effects arising from time dependences of the z-independent perturbed state, e.g., current rising as t α , Ohmic heating, and time variation of the pinch radius, are included in the analysis. The formalism appears to provide a good representation of ''global'' modes that involve coherent sausage distortion of the entire cross section of the pinch, but excludes modes that are localized radially, and higher radial eigenmodes. For this and other reasons, it is expected that the model underestimates the maximum instability growth rates, but is reasonable for global sausage modes. The net effect of resistivity and time variation of the unperturbed state is to decrease the growth rate if α approx-lt 1, but never by more than a factor of about 2. The effect is to increase the growth rate if α approx-gt 1

  11. In-situ electric resistance measurements and annealing effects of graphite exposed to swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, Sandrina [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States); Pellemoine, Frederique, E-mail: pellemoi@frib.msu.edu [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States); Tomut, Marilena [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); National Institute for Materials Physics (NIMP), Bucharest (Romania); Avilov, Mikhail [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States); Bender, Markus [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); Boulesteix, Marine [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States); Krause, Markus [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); Technische Universität, Darmstadt (Germany); Mittig, Wolfgang [National Superconducting Cyclotron Lab (NSCL), Michigan State University, East Lansing, MI (United States); Schein, Mike [Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States); Severin, Daniel [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); Trautmann, Christina [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); Technische Universität, Darmstadt (Germany)

    2013-11-01

    To study the suitability of using graphite as material for high-power targets for rare isotope production at the future Facility for Rare Isotope Beams (FRIB) in the USA and at the Facility for Antiproton and Ion Research (FAIR) in Germany, thin foils of polycrystalline graphite were exposed to 8.6-MeV/u Au ions reaching a maximum fluence of 1 × 10{sup 15} ions/cm{sup 2}. Foil irradiation temperatures of up to 1800 °C were obtained by ohmic heating. In-situ monitoring of the electrical resistance of the graphite foils during and after irradiation provided information on beam-induced radiation damage. The rate of electrical resistance increase as a function of fluence was found to decrease with increasing irradiation temperature, indicating a more efficient annealing of the irradiation-produced defects. This is corroborated by the observation that graphite foils irradiated at temperatures below about 800 °C showed cracks and pronounced deformations, which did not appear on the samples irradiated at higher temperatures.

  12. Transparent resistive switching memory using aluminum oxide on a flexible substrate

    Science.gov (United States)

    Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

    2016-02-01

    Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

  13. Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

    2014-01-01

    The electrical characterization of HfO 2 /ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO 2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO 2 /ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

  14. Electric-pulse-induced resistance switching effect in the bulk of La0.5Ca0.5MnO3 ceramics

    Directory of Open Access Journals (Sweden)

    M. L. Wu

    2014-04-01

    Full Text Available In the majority of contributions, the electrical–pulse-induced resistance (EPIR switching effect of perovskite manganites is thought to originate from the extrinsic interfacial Schottky barrier between the metal electrode and the surface of sample. In this work, La0.5Ca0.5MnO3 (LCMO ceramic samples were synthesized by solid state reaction and the transport properties, especially, the EPIR effect and memristor behavior were investigated under 4-wire method using silver-glue as electrodes. Although the I-V characteristic of LCMO shows an ohmic linearity under the 4-wire mode at room temperature, a stable and remarkable EPIR can still be observed when the pulse voltage is more than a critical value. This bulk EPIR effect is novel for rare - earth doped manganites.

  15. Challenges to Resistance Welding

    DEFF Research Database (Denmark)

    Song, Quanfeng

    This report originates from the compulsory defense during my Ph.D. study at the Technical University of Denmark. Resistance welding is an old and well-proven technology. Yet the emergence of more and more new materials, new designs, invention off new joining techniques, and more stringent...... requirement in quality have imposed challenges to the resistance welding. More some research and development have to be done to adapt the old technology to the manufacturing industry of the 21st century. In the 1st part of the report, the challenging factors to the resistance welding are reviewed. Numerical...... simulation of resistance welding has been under development for many years. Yet it is no easy to make simulation results reliable and accurate because of the complexity of resistance welding process. In the 2nd part of the report numerical modeling of resistance welding is reviewed, some critical factors...

  16. Multidrug-Resistant Candida

    DEFF Research Database (Denmark)

    Arendrup, Maiken Cavling; Patterson, Thomas F

    2017-01-01

    Invasive Candida infections remain an important cause of morbidity and mortality, especially in hospitalized and immunocompromised or critically ill patients. A limited number of antifungal agents from only a few drug classes are available to treat patients with these serious infections. Resistance...... can be either intrinsic or acquired. Resistance mechanisms are not exchanged between Candida; thus, acquired resistance either emerges in response to an antifungal selection pressure in the individual patient or, more rarely, occur due to horizontal transmission of resistant strains between patients....... Although multidrug resistance is uncommon, increasing reports of multidrug resistance to the azoles, echinocandins, and polyenes have occurred in several Candida species, most notably Candida glabrata and more recently Candida auris. Drivers are overall antifungal use, subtherapeutic drug levels at sites...

  17. Resistance in Everyday Life

    DEFF Research Database (Denmark)

    This book is about resistance in everyday life, illustrated through empirical contexts from different parts of the world. Resistance is a widespread phenomenon in biological, social and psychological domains of human cultural development. Yet, it is not well articulated in the academic literature....... The contributors deal with strategies for handling dissent by individuals or groups, specifically dissent through resistance. Resistance can be a location of intense personal, interpersonal and cultural negotiation, and that is the primary reason for interest in this phenomenon. Ordinary life events contain...

  18. Resistent tuberkulose i Danmark

    DEFF Research Database (Denmark)

    Thomsen, V O; Johansen, I S; Bauer, J O

    2001-01-01

    INTRODUCTION: Increased rates of multidrug-resistant (MDR) tuberculosis (TB) has been reported from countries close to Denmark. We evaluated the incidence of drug resistance in Denmark in order to determine the magnitude of the problem. MATERIALS AND METHODS: Susceptibility testing was performed......-cluster. Among all patients with isoniazid- and streptomycin-resistance, 77.0% had clustered strains. DISCUSSION: In conclusion, although drug resistance among untreated Danes was close to the rate estimated in good national programmes, close monitoring is needed in future years, as active transmission...

  19. Antipastorialism : Resistant Georgic Mode

    National Research Council Canada - National Science Library

    Zimmerman, Donald

    2000-01-01

    .... Abolitionists, women, Afro-British slaves, and those who protested land enclosure developed a multivalent, resistant mode of writing, which I name 'antipastoralism', that countered orthodox, poetical...

  20. Pressure anisotropy in ohmic FTU discharges

    International Nuclear Information System (INIS)

    Alladio, F.; Buratti, P.; Grolli, M.; Marinucci, M.; Podda, S.; Zerbini, M.; Zoffoli, M.

    1991-01-01

    The diamagnetic measurements of the toroidal magnetic flux provides on tokamaks a direct evaluation of the perpendicular beta poloidal of the plasma. The diamagnetic measurement is performed on FTU by compensated diamagnetic loops that are mounted on the inside of the toroidal field magnet. The signal of the main loop that surrounds the plasma is compensated by the difference between the signals of two auxiliary loops (one external and the other internal to the main one) that just measures the vacuum toroidal flux. The most careful zeroing of the compensated signal in absence of the plasma has been performed by trimmering all the electronics that makes the analogue signal processing; however, due to the time evolution of the spatial ripple of the toroidal field, such zeroing does not produce a zero voltage signal. At the best regulation one has obtained a reproducible signal for a given toroidal field current waveform (in absence of any other machine current). The reproducibility of the signal was perfectly constant during months within the arbitrary addition of an offset and of a linear ramp both due to the minimal thermal drifts of the analogue electronics. This has allowed to obtain the real diamagnetic signal by a simple subtraction and allowing for an additional offset and ramp. This operation was performed on two independent sets of compensated diamagnetic loops, one sitting on the minimum and the other on the maximum of the toroidal field ripple. (author) 2 refs., 3 figs

  1. Density fluctuations in ohmic Asdex discharges

    International Nuclear Information System (INIS)

    Dodel, G.; Holzhauer, E.

    1989-01-01

    The investigations on the wave-number and frequency spectra of the density fluctuations, occurring in the different operational modes of ASDEX, are summarized. The aim of the experiments is to study the physical nature of fluctuations and their influence on anomalous transport. The scattering system is described. The results reported were obtained using a 100 mW, λ = 119 μm CW CH-30H laser and homodyne detection

  2. Antibiotic resistance in animals.

    Science.gov (United States)

    Barton, Mary D; Pratt, Rachael; Hart, Wendy S

    2003-01-01

    There is currently no systematic surveillance or monitoring of antibiotic resistance in Australian animals. Registration of antibiotics for use in animals is tightly controlled and has been very conservative. Fluoroquinolones have not been registered for use in food producing animals and other products have been removed from the market because of human health concerns. In the late 1970s, the Animal Health Committee coordinated a survey of resistance in Salmonella and Escherichia coli isolates from cattle, pigs and poultry and in bovine Staphylococcus aureus. Some additional information is available from published case reports. In samples collected prior to the withdrawal of avoparcin from the market, no vancomycin resistant Enterococcus faecium or Enterococcus faecalis were detected in samples collected from pigs, whereas some vanA enterococci, including E. faecium and E. faecalis, were found in chickens. No vanB enterococci were detected in either species. Virginiamycin resistance was common in both pig and poultry isolates. Multiple resistance was common in E. coli and salmonellae isolates. No fluoroquinolone resistance was found in salmonellae, E. coli or Campylobacter. Beta-lactamase production is common in isolates from bovine mastitis, but no methicillin resistance has been detected. However, methicillin resistance has been reported in canine isolates of Staphylococcus intermedius and extended spectrum beta-lactamase producing E. coli has been found in dogs.

  3. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Skip to common links HHS U.S. Department of Health and Human Services U.S. Food and Drug Administration A to Z Index Follow FDA En Español Search FDA Submit search ... & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet ...

  4. Resistance and conformity

    NARCIS (Netherlands)

    Sumter, S.R.; Bokhorst, C.L.; Westenberg, P.M.; Levesque, R.J.R.

    2011-01-01

    Resistance to peer influence, or the ability to resist making choices or adopting views under the implicit or explicit influence of your peers, is expected to undergo changes during adolescence. Two developmental trajectories have emerged from the field. On the one hand, adolescents show a temporary

  5. Mechanisms of Antibiotic Resistance

    Science.gov (United States)

    Munita, Jose M.; Arias, Cesar A.

    2015-01-01

    Emergence of resistance among the most important bacterial pathogens is recognized as a major public health threat affecting humans worldwide. Multidrug-resistant organisms have emerged not only in the hospital environment but are now often identified in community settings, suggesting that reservoirs of antibiotic-resistant bacteria are present outside the hospital. The bacterial response to the antibiotic “attack” is the prime example of bacterial adaptation and the pinnacle of evolution. “Survival of the fittest” is a consequence of an immense genetic plasticity of bacterial pathogens that trigger specific responses that result in mutational adaptations, acquisition of genetic material or alteration of gene expression producing resistance to virtually all antibiotics currently available in clinical practice. Therefore, understanding the biochemical and genetic basis of resistance is of paramount importance to design strategies to curtail the emergence and spread of resistance and devise innovative therapeutic approaches against multidrug-resistant organisms. In this chapter, we will describe in detail the major mechanisms of antibiotic resistance encountered in clinical practice providing specific examples in relevant bacterial pathogens. PMID:27227291

  6. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Skip to common links HHS U.S. Department of Health and Human Services U.S. Food and Drug Administration ... Tobacco Products Animal & Veterinary Home Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet ...

  7. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... menu Skip to common links HHS U.S. Department of Health and Human Services U.S. Food and Drug Administration ... Tobacco Products Animal & Veterinary Home Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of Antimicrobial Resistance Share Tweet Linkedin Pin it More ...

  8. Phenotypic Resistance to Antibiotics

    Directory of Open Access Journals (Sweden)

    Jose L. Martinez

    2013-04-01

    Full Text Available The development of antibiotic resistance is usually associated with genetic changes, either to the acquisition of resistance genes, or to mutations in elements relevant for the activity of the antibiotic. However, in some situations resistance can be achieved without any genetic alteration; this is called phenotypic resistance. Non-inherited resistance is associated to specific processes such as growth in biofilms, a stationary growth phase or persistence. These situations might occur during infection but they are not usually considered in classical susceptibility tests at the clinical microbiology laboratories. Recent work has also shown that the susceptibility to antibiotics is highly dependent on the bacterial metabolism and that global metabolic regulators can modulate this phenotype. This modulation includes situations in which bacteria can be more resistant or more susceptible to antibiotics. Understanding these processes will thus help in establishing novel therapeutic approaches based on the actual susceptibility shown by bacteria during infection, which might differ from that determined in the laboratory. In this review, we discuss different examples of phenotypic resistance and the mechanisms that regulate the crosstalk between bacterial metabolism and the susceptibility to antibiotics. Finally, information on strategies currently under development for diminishing the phenotypic resistance to antibiotics of bacterial pathogens is presented.

  9. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... More in Antimicrobial Resistance National Antimicrobial Resistance Monitoring System About NARMS 2015 NARMS Integrated Report Data Meetings ... Deutsch | 日本語 | فارسی | English FDA Accessibility Careers FDA Basics FOIA No FEAR ...

  10. Resistance to change

    NARCIS (Netherlands)

    Dow, J.; Perotti, E.

    2009-01-01

    Established firms often fail to maintain leadership following disruptive market shifts. We argue that such firms are more prone to internal resistance. A radical adjustment of assets affects the distribution of employee rents, creating winners and losers. Losers resist large changes when strong

  11. Resistance to change

    NARCIS (Netherlands)

    Dow, J.; Perotti, E.

    2013-01-01

    Established firms often fail to maintain leadership following disrup tive market shifts. We argue that such firms are more prone to internal resistance. A radical adjustment of assets affects the distribution of employee rents, creating winners and losers. Losers resist large changes when strong

  12. Glycosphingolipids and insulin resistance

    NARCIS (Netherlands)

    Langeveld, Mirjam; Aerts, Johannes M. F. G.

    2009-01-01

    Obesity is associated with an increased risk for insulin resistance, a state characterized by impaired responsiveness of liver, muscle and adipose tissue to insulin. One class of lipids involved in the development of insulin resistance are the (glyco)sphingolipids. Ceramide, the most simple

  13. Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

    Science.gov (United States)

    Prakash, Ravi; Kaur, Davinder

    2018-05-01

    The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

  14. Composition-ratio influence on resistive switching behavior of solution-processed InGaZnO-based thin-film.

    Science.gov (United States)

    Hwang, Yeong-Hyeon; Hwang, Inchan; Cho, Won-Ju

    2014-11-01

    The influence of composition ratio on the bipolar resistive switching behavior of resistive switching memory devices based on amorphous indium-gallium-zinc-oxide (a-IGZO) using the spin-coating process was investigated. To study the stoichiometric effects of the a-IGZO films on device characteristics, four devices with In/Ga/Zn stoichiometries of 1:1:1, 3:1:1, 1:3:1, and 1:1:3 were fabricated and characterized. The 3:1:1 film showed an ohmic behavior and the 1:1:3 film showed a rectifying switching behavior. The current-voltage characteristics of the a-IGZO films with stoichiometries of 1:1:1 and 1:3:1, however, showed a bipolar resistive memory switching behavior. We found that the three-fold increase in the gallium content ratio reduces the reset voltage from -0.9 to - 0.4 V and enhances the current ratio of high to low resistive states from 0.7 x 10(1) to 3 x 10(1). Our results show that the increase in the Ga composition ratio in the a-IGZO-based ReRAM cells effectively improves the device performance and reliability by increasing the initial defect density in the a-IGZO films.

  15. A study on heat resistance of high temperature resistant coating

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Liping; Wang, Xueying; Zhang, Qibin; Qin, Yanlong; Lin, Zhu [Research Institute of Engineering Technology of CNPC, Tianjin (China)

    2005-04-15

    A high temperature resistant coating has been developed, which is mainly for heavy oil production pipes deserved the serious corrosion. The coating has excellent physical and mechanical performance and corrosion resistance at room and high temperature. In order to simulate the underground working condition of heavy oil pipes,the heat resistance of the high temperature resistant coating has been studied. The development and a study on the heat resistance of the DHT high temperature resistance coating have been introduced in this paper

  16. A study on heat resistance of high temperature resistant coating

    International Nuclear Information System (INIS)

    Zhang, Liping; Wang, Xueying; Zhang, Qibin; Qin, Yanlong; Lin, Zhu

    2005-01-01

    A high temperature resistant coating has been developed, which is mainly for heavy oil production pipes deserved the serious corrosion. The coating has excellent physical and mechanical performance and corrosion resistance at room and high temperature. In order to simulate the underground working condition of heavy oil pipes,the heat resistance of the high temperature resistant coating has been studied. The development and a study on the heat resistance of the DHT high temperature resistance coating have been introduced in this paper

  17. Multidrug-resistant tuberculosis

    Directory of Open Access Journals (Sweden)

    McNerney Ruth

    2008-01-01

    Full Text Available Abstract Background With almost 9 million new cases each year, tuberculosis remains one of the most feared diseases on the planet. Led by the STOP-TB Partnership and WHO, recent efforts to combat the disease have made considerable progress in a number of countries. However, the emergence of mutated strains of Mycobacterium tuberculosis that are resistant to the major anti-tuberculosis drugs poses a deadly threat to control efforts. Multidrug-resistant tuberculosis (MDR-TB has been reported in all regions of the world. More recently, extensively drug resistant-tuberculosis (XDR-TB that is also resistant to second line drugs has emerged in a number of countries. To ensure that adequate resources are allocated to prevent the emergence and spread of drug resistance it is important to understand the scale of the problem. In this article we propose that current methods of describing the epidemiology of drug resistant tuberculosis are not adequate for this purpose and argue for the inclusion of population based statistics in global surveillance data. Discussion Whereas the prevalence of tuberculosis is presented as the proportion of individuals within a defined population having disease, the prevalence of drug resistant tuberculosis is usually presented as the proportion of tuberculosis cases exhibiting resistance to anti-tuberculosis drugs. Global surveillance activities have identified countries in Eastern Europe, the former Soviet Union and regions of China as having a high proportion of MDR-TB cases and international commentary has focused primarily on the urgent need to improve control in these settings. Other regions, such as sub-Saharan Africa have been observed as having a low proportion of drug resistant cases. However, if one considers the incidence of new tuberculosis cases with drug resistant disease in terms of the population then countries of sub-Saharan Africa have amongst the highest rates of transmitted MDR-TB in the world. We propose

  18. Genetics Home Reference: clopidogrel resistance

    Science.gov (United States)

    ... Facebook Twitter Home Health Conditions Clopidogrel resistance Clopidogrel resistance Printable PDF Open All Close All Enable Javascript to view the expand/collapse boxes. Description Clopidogrel resistance is a condition in which the drug clopidogrel ...

  19. Genetics Home Reference: warfarin resistance

    Science.gov (United States)

    ... Email Facebook Twitter Home Health Conditions Warfarin resistance Warfarin resistance Printable PDF Open All Close All Enable Javascript to view the expand/collapse boxes. Description Warfarin resistance is a condition in which individuals have ...

  20. Hydraulic resistance of biofilms

    KAUST Repository

    Dreszer, C.

    2013-02-01

    Biofilms may interfere with membrane performance in at least three ways: (i) increase of the transmembrane pressure drop, (ii) increase of feed channel (feed-concentrate) pressure drop, and (iii) increase of transmembrane passage. Given the relevance of biofouling, it is surprising how few data exist about the hydraulic resistance of biofilms that may affect the transmembrane pressure drop and membrane passage. In this study, biofilms were generated in a lab scale cross flow microfiltration system at two fluxes (20 and 100Lm-2h-1) and constant cross flow (0.1ms-1). As a nutrient source, acetate was added (1.0mgL-1 acetate C) besides a control without nutrient supply. A microfiltration (MF) membrane was chosen because the MF membrane resistance is very low compared to the expected biofilm resistance and, thus, biofilm resistance can be determined accurately. Transmembrane pressure drop was monitored. As biofilm parameters, thickness, total cell number, TOC, and extracellular polymeric substances (EPS) were determined, it was demonstrated that no internal membrane fouling occurred and that the fouling layer actually consisted of a grown biofilm and was not a filter cake of accumulated bacterial cells. At 20Lm-2h-1 flux with a nutrient dosage of 1mgL-1 acetate C, the resistance after 4 days reached a value of 6×1012m-1. At 100Lm-2h-1 flux under the same conditions, the resistance was 5×1013m-1. No correlation of biofilm resistance to biofilm thickness was found; Biofilms with similar thickness could have different resistance depending on the applied flux. The cell number in biofilms was between 4×107 and 5×108 cellscm-2. At this number, bacterial cells make up less than a half percent of the overall biofilm volume and therefore did not hamper the water flow through the biofilm significantly. A flux of 100Lm-2h-1 with nutrient supply caused higher cell numbers, more biomass, and higher biofilm resistance than a flux of 20Lm-2h-1. However, the biofilm thickness

  1. Antibiotic Resistance in Foodborne Pathogens

    OpenAIRE

    Walsh, Ciara; Duffy, Geraldine

    2013-01-01

    Wide-spread antibiotic resistance among bacterial pathogens is now a serious public health issue and multi-antibiotic resistance has been reported in many foodborne pathogens including Salmonella and E. coli. A study to determine antibiotic resistance profiles of a range of Salmonella and Verocytotoxigenic E.coli (VTEC) isolated from Irish foods revealed significant levels of antibiotic resistance in the strains. S. typhimurium DT104 were multiantibiotic resistant with 97% resistant to 7 anti...

  2. Interplay of cross-plane polaronic transport and resistive switching in Pt–Pr0.67Ca0.33MnO3–Pt heterostructures

    International Nuclear Information System (INIS)

    Scherff, M; Hoffmann, J; Meyer, B; Danz, Th; Jooss, Ch

    2013-01-01

    The identification of the cross-plane electric transport mechanisms in different resistance states of metal–oxide sandwich structures is essential for gaining insights into the mechanisms of resistive switching (RS). Here, we present a systematic study of cross-plane electric transport properties of Pr 0.67 Ca 0.33 MnO 3 (PCMO) thin films sandwiched by precious Pt metal electrodes. We observe three different transport regimes: ohmic, nonlinear and RS. The nonlinear regime is associated with colossal magneto-resistance (CMR) and colossal electro-resistance (CER) effects. In contrast to RS, the CMR and CER are volatile resistance effects which persist only during application of strong magnetic or electric fields and they are restricted to low temperatures. At low current densities, the device resistance is dominated by small polaron hopping transport of the PCMO film. At higher electric current densities near the switching threshold, the interface resistance starts to dominate and remarkably also exhibits thermally activated transport properties. Our studies also shed light onto the interplay of colossal resistance effects and RS: at low temperatures, RS can be only induced by reduction of the PCMO resistivity through CMR and CER. This clearly demonstrates the key role of the current density for controlling the amplitude of non-volatile resistive changes. Conversely, the CMR can be used as a probe for the switching induced changes in disorder and correlations. At small switching amplitudes, we observe slight changes in polaron activation energy which can be attributed to changes at the interface. If the switching amplitude exceeds 1000% and more, the CMR effect in the device can be reversibly changed. This indicates persistent changes in electronic or lattice structure of large regions within the PCMO film. (paper)

  3. FRC collisionless resistivity

    International Nuclear Information System (INIS)

    Tajima, T.; Horton, W.

    1990-01-01

    Ions in the field reversed configuration (FRC) exhibit stochastic orbits due to the field null and the curvature of poloidal field lines. Velocity correlations of these particles decay in a power law fashion t -m where 1 ≤ m ≤ 2. This decay of the single particle correlation function is characteristic of the long tail correlations of strongly chaotic or nonlinear systems found in other problems of statistical physics. This decay of correlations gives rise to a collisionless resistivity that can far exceed the collisional resistivity in an FRC plasma. The finite correlation τ c of a single particle limits the acceleration in the electric field producing the finite resistivity. Maxwellian test particle distributions are integrated to find the measure of the set of stochastic ions that contribute to the collisionless resistivity. The computed conductivity is proportional to the square root of the characteristic ion gyroradius in both simulation and theory

  4. Antimicrobial (Drug) Resistance Prevention

    Science.gov (United States)

    ... June 6, 2018 HIV Vaccine Elicits Antibodies in Animals that Neutralize Dozens of HIV Strains , June 4, 2018 ... Antimicrobial (Drug) Resistance > Understanding share with facebook share with twitter share ...

  5. Antibiotics and Resistance: Glossary

    Science.gov (United States)

    ... chromosomes and plasmids. Transposons often carry genes specifying antimicrobial resistance. Virus An extremely small infective agent, visible only with an electron microscope. Viruses can cause disease in humans, animals and plants. Viruses consist of a protein coat ...

  6. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... search Popular ... produced a nine-minute animation explaining how antimicrobial resistance both emerges and proliferates among bacteria. Over time, the use of antimicrobial drugs will ...

  7. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... bacteria. Over time, the use of antimicrobial drugs will result in the development of resistant strains of ... and other key audiences. We hope this animation will make the concept more understandable to non-scientists ...

  8. Treatment-Resistant Schizophrenia

    DEFF Research Database (Denmark)

    Howes, Oliver D; McCutcheon, Rob; Agid, Ofer

    2017-01-01

    OBJECTIVE: Research and clinical translation in schizophrenia is limited by inconsistent definitions of treatment resistance and response. To address this issue, the authors evaluated current approaches and then developed consensus criteria and guidelines. METHOD: A systematic review of randomize...

  9. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... it More sharing options Linkedin Pin it Email Print The Food and Drug Administration's (FDA's) Center for ... issue of antimicrobial resistance is that the subject material appears abstract and is complex. This video was ...

  10. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... produced material may be copied, reproduced, and distributed as long as FDA's Center for Veterinary Medicine is cited as the corporate author. Animation Animation of Antimicrobial Resistance ( ...

  11. Piggyback resistive Micromegas

    CERN Document Server

    Attié, D; Durand, D; Desforge, D; Ferrer-Ribas, E; Galán, J; Giomataris, Y; Gongadze, A; Iguaz, F J; Jeanneau, F; de Oliveira, R; Papaevangelou, T; Peyaud, A; Teixeira, A

    2013-01-01

    Piggyback Micromegas consists in a novel readout architecture where the anode element is made of a resistive layer on a ceramic substrate. The resistive layer is deposited on the thin ceramic substrate by an industrial process which provides large dynamic range of resistivity (10$^6$ to 10$^{10}$\\,M$\\Omega$/square). The particularity of this new structure is that the active part is entirely dissociated from the read-out element. This gives a large flexibility on the design of the anode structure and the readout scheme. Without significant loss, signals are transmitted by capacitive coupling to the read-out pads. The detector provides high gas gain, good energy resolution and the resistive layer assures spark protection for the electronics. This assembly could be combined with modern pixel array electronic ASICs. First tests with different Piggyback detectors and configurations will be presented. This structure is adequate for cost effective fabrication and low outgassing detectors. It was designed to perform ...

  12. Antibiotic-Resistant Gonorrhea

    Science.gov (United States)

    ... Search Form Controls Cancel Submit Search the CDC Gonorrhea Note: Javascript is disabled or is not supported ... on Facebook Sexually Transmitted Diseases (STDs) Antibiotic-Resistant Gonorrhea Recommend on Facebook Tweet Share Compartir Low Resolution ...

  13. Cotrimoxazole Resistant Chancroid

    Directory of Open Access Journals (Sweden)

    Kamlender Singh

    1985-01-01

    Full Text Available Four male young adults, after contact with prostitutes, developed clinically typical chancroid which was resistant to cotrimoxazole alone and also in combination with tetracycline. With chloramphenicol, the response was quick and complete with no untoward side effects.

  14. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Resistance Monitoring System About NARMS 2015 NARMS Integrated Report Data Meetings and Publications Resources Judicious Use of ... back to top Popular Content Home Latest Recalls Report an Adverse Event MedWatch Safety Alerts News Releases ...

  15. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... complex. This video was designed to make the concept of antimicrobial resistance more real and understandable to ... audiences. We hope this animation will make the concept more understandable to non-scientists by showing how ...

  16. MULTIDRUG-RESISTANT TUBERCULOSIS

    African Journals Online (AJOL)

    Kurt

    health, with the focus of DOTS programmes on cure of infectious TB patients and prevention of drug resistance. ... Despite highly effective drugs and disease control strategies, morbidity and mortality .... notification and registration system.

  17. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... One of the major obstacles to understanding the issue of antimicrobial resistance is that the subject material ... Website Policies U.S. Food and Drug Administration 10903 New Hampshire Avenue Silver Spring, MD 20993 1-888- ...

  18. Adiabatic and isothermal resistivities

    International Nuclear Information System (INIS)

    Fishman, R.S.

    1989-01-01

    The force-balance method is used to calculate the isothermal resistivity to first order in the electric field. To lowest order in the impurity potential, the isothermal resistivity disagrees with the adiabatic results of the Kubo formula and the Boltzmann equation. However, an expansion of the isothermal resistivity in powers of the impurity potential is divergent, with two sets of divergent terms. The first set arises from the density matrix of the relative electron-phonon system. The second set arises from the explicit dependence of the density matrix on the electric field, which was ignored by force-balance calculations. These divergent contributions are calculated inductively, by applying a recursion relation for the Green's functions. Using the λ 2 t→∞ limit of van Hove, I show that the resummation of these divergent terms yields the same result for the resistivity as the adiabatic calculations, in direct analogy with the work of Argyres and Sigel, and Huberman and Chester

  19. Antibiotics and Antibiotic Resistance

    Science.gov (United States)

    ... all that ails you. Antibiotics, also known as antimicrobial drugs, are drugs that fight infections caused by bacteria. ... Information for Consumers and Health Professionals Information by drug class Antimicrobial Resistance Animal and Veterinary Related Resources Further information ...

  20. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... proliferates among bacteria. Over time, the use of antimicrobial drugs will result in the development of resistant strains ... bacteria, complicating clinician's efforts to select the appropriate ... and human medicine to preserve the effectiveness of these drugs. One ...

  1. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... use of antimicrobial drugs will result in the development of resistant strains of bacteria, complicating clinician's efforts ... Inspections & Compliance Federal, State & Local Officials Consumers Health Professionals Science & Research Industry Scroll back to top Popular ...

  2. Regicide and Resistance

    DEFF Research Database (Denmark)

    Flohr, Mikkel

    2016-01-01

    This article examines the role of resistance in Michel Foucault’s political thought. The article recovers this otherwise obscured aspect of Foucault’s thought through a systematic analysis of his theoretical regicide and consequent reconceptualization of power, agency and resistance. It is argued...... that Foucault developed a highly original account of resistance, which was, and should continue to be considered, central to his thought and its critical potential. It is shown how Foucault’s concept of resistance overcomes the limitation of voluntarism and determinism, which continue to mare contemporary...... political theory, providing a passage from the critique of contemporary configurations of power to the irrepressible possibility that they may be contested and changed....

  3. Stab resistant body armour

    OpenAIRE

    Horsfall, I

    2000-01-01

    There is now a widely accepted need for stab resistant body armour for the police in the UK. However, very little research has been done on knife resistant systems and the penetration mechanics of sharp projectiles are poorly understood. This thesis explores the general background to knife attack and defence with a particular emphasis on the penetration mechanics of edged weapons. The energy and velocity that can be achieved in stabbing actions has been determined for a numb...

  4. Radiation resistant modified polypropylene

    International Nuclear Information System (INIS)

    Bojarski, J.; Zimek, Z.

    1997-01-01

    Radiation technology for production of radiation resistant polypropylene for medical use has been presented. The method consists in radiation induced copolymerization of polypropylene with ethylene and addition of small amount of copolymer of polyethylene and vinyl acetate. The material of proposed composition has a very good mechanical properties and elevated radiation resistivity decided on possibility of radiosterilization of products made of this material and designed for medical use. 3 figs, 3 tabs

  5. Analytic study of transverse shunt resistance and even-odd mode coupling of a rod type RFQ

    International Nuclear Information System (INIS)

    Koscielniak, S.

    1994-06-01

    To minimize the ohmic power losses, it is necessary to maximize the transverse shunt resistance, R shunt . The cell of a rod-type RFQ is modelled by a parallel two-rod transmission line supported above a parallel ground conductor by two legs. Due to coupling between neighboring supports, the loading impedance is modified depending on the leg spacing. The shunt resistance is improved by reducing the cell length and increasing the leg spacing, and maximized when the legs are equally spaced. However, this is also the condition for strong excitation of the unwanted 'even-mode' in which a potential difference exists between the ends of the rods mid-plane and the grounding conductor or tank, Once the legs of the support are longitudinally separated, some even-mode excitation of the structure is inevitable because some current must be injected into the ground conductor; the even-mode excitation rises as leg separation increases. Further, when the desired odd-mode voltage is symmetric about the cell centre, the even-mode voltage is anti-symmetric This paper is a very much abridged version of two internal design notes[3], [4]. (author). 4 refs.,1 fig

  6. Direct patterning of highly-conductive graphene@copper composites using copper naphthenate as a resist for graphene device applications.

    Science.gov (United States)

    Bi, Kaixi; Xiang, Quan; Chen, Yiqin; Shi, Huimin; Li, Zhiqin; Lin, Jun; Zhang, Yongzhe; Wan, Qiang; Zhang, Guanhua; Qin, Shiqiao; Zhang, Xueao; Duan, Huigao

    2017-11-09

    We report an electron-beam lithography process to directly fabricate graphene@copper composite patterns without involving metal deposition, lift-off and etching processes using copper naphthenate as a high-resolution negative-tone resist. As a commonly used industrial painting product, copper naphthenate is extremely cheap with a long shelf time but demonstrates an unexpected patterning resolution better than 10 nm. With appropriate annealing under a hydrogen atmosphere, the produced graphene@copper composite patterns show high conductivity of ∼400 S cm -1 . X-ray diffraction, conformal Raman spectroscopy and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the final patterns. With the properties of high resolution and high conductivity, the patterned graphene@copper composites could be used as conductive pads and interconnects for graphene electronic devices with ohmic contacts. Compared to common fabrication processes involving metal evaporation and lift-off steps, this pattern-transfer-free fabrication process using copper naphthenate resist is direct and simple but allows comparable device performance in practical device applications.

  7. Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

    Science.gov (United States)

    Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

    2017-08-01

    Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

  8. Clopidogrel Resistance: Current Issues

    Directory of Open Access Journals (Sweden)

    NS Neki

    2016-05-01

    Full Text Available Antiplatelet agents are mainly used in the prevention and management of atherothrombotic complications. Dual antiplatelet therapy, combining aspirin and clopidogrel, is the standard care for patients having acute coronary syndromes or undergoing percutaneous coronary intervention according to the current ACC/AHA and ESC guidelines. But in spite of administration of dual antiplatelet therapy, some patients develop recurrent cardiovascular ischemic events especially stent thrombosis which is a serious clinical problem. Antiplatelet response to clopidogrel varies widely among patients based on ex vivo platelet function measurements. Clopidogrel is an effective inhibitor of platelet activation and aggregation due to its selective and irreversible blockade of the P2Y12 receptor. Patients who display little attenuation of platelet reactivity with clopidogrel therapy are labeled as low or nonresponders or clopidogrel resistant. The mechanism of clopidogrel resistance remains incompletely defined but there are certain clinical, cellular and genetic factors including polymorphisms responsible for therapeutic failure. Currently there is no standardized or widely accepted definition of clopidogrel resistance. The future may soon be realised in the routine measurement of platelet activity in the same way that blood pressure, cholesterol and blood sugar are followed to help guide the therapy, thus improving the care for millions of people. This review focuses on the methods used to identify patients with clopidogrel resistance, the underlying mechanisms, metabolism, clinical significance and current therapeutic strategies to overcome clopidogrel resistance. J Enam Med Col 2016; 6(1: 38-46

  9. CONTACT RESISTANCE MODELING

    Directory of Open Access Journals (Sweden)

    S. V. LOSKUTOV

    2018-05-01

    Full Text Available Purpose. To determine the contribution of the real contact spots distribution in the total conductivity of the conductors contact. Methodology. The electrical contact resistance research was carried out on models. The experimental part of this work was done on paper with a graphite layer with membranes (the first type and conductive liquids with discrete partitions (the second type. Findings. It is shown that the contact electrical resistance is mainly determined by the real area of metal contact. The experimental dependence of the electrical resistance of the second type model on the distance between the electrodes and the potential distribution along the sample surface for the first type model were obtained. The theoretical model based on the principle of electric field superposition was considered. The dependences obtained experimentally and calculated by using the theoretical model are in good agreement. Originality. The regularity of the electrical contact resistance formation on a large number of membranes was researched for the first time. A new model of discrete electrical contact based on the liquid as the conducting environment with nuclear membrane partitions was developed. The conclusions of the additivity of contact and bulk electrical resistance were done. Practical value. Based on these researches, a new experimental method of kinetic macroidentation that as a parameter of the metal surface layer deformation uses the real contact area was developed. This method allows to determine the value of average contact stresses, yield point, change of the stress on the depth of deformation depending on the surface treatment.

  10. Resistance to technological progress

    International Nuclear Information System (INIS)

    Isensee, J.

    1983-01-01

    This article deals with the tolerance test the constitutional system (Basic Law) of the Federal Republic of Germany is currently put to as a consequence of the resistance to the power structure of this country, which is expressed in the name of protection and defense for the environment and world peace. This biopacifistic resistance movment, the author says, has nothing to do with the legal right to resist, as laid down in art. 20 (4) of the Basic Law. According to the author, this attitude is an offspring of fear of the hazards of technological progress, primarily of nuclear hazards. Practical resistance, the author states, is preceded by theoretical resistance in speech: De-legitimation of the democratic legality, of the parliamentary functions, of the supreme power of the government, and denial of the citizens duty of obedience. The author raises the question as to whether this attitude of disobedience on ecological grounds marks the onset of a fourth stage of development of the modern state, after we have passed through stages characterised by fear of civil war, of tyranny, and of social privation and suffering. There are no new ideas brought forward by the ecologically minded movement, the author says, for re-shaping our institutions or constitutional system. (HP) [de

  11. Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2- x thin films deposited at room temperature

    Science.gov (United States)

    Ismail, Muhammad; Ullah, Rehmat; Hussain, Riaz; Talib, Ijaz; Rana, Anwar Manzoor; Hussain, Muhammad; Mahmood, Khalid; Hussain, Fayyaz; Ahmed, Ejaz; Bao, Dinghua

    2018-02-01

    Cerium oxide (CeO2-x) film was deposited on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Resistive switching characteristics of these ceria films have been improved by increasing oxygen content during deposition process. Endurance and statistical analyses indicate that the operating stability of CeO2-x-based memory is highly dependent on the oxygen content. Results indicate that CeO2-x film-based RRAM devices exhibit optimum performance when fabricated at an argon/oxygen ratio of 6:24. An increase in the oxygen content introduced during CeO2-x film deposition not only stabilizes the conventional bipolar RS but also improves excellent switching uniformity such as large ON/OFF ratio (102), excellent switching device-to-device uniformity and good sweep endurance over 500 repeated RS cycles. Conduction in the low-resistance state (LRS) as well as in the low bias field region in the high-resistance state (HRS) is found to be Ohmic and thus supports the conductive filament (CF) theory. In the high voltage region of HRS, space charge limited conduction (SCLC) and Schottky emission are found to be the dominant conduction mechanisms. A feasible filamentary RS mechanism based on the movement of oxygen ions/vacancies under the bias voltage has been discussed.

  12. Biological improvement of radiation resistance

    Energy Technology Data Exchange (ETDEWEB)

    Chun, K J; Lee, Y K; Kim, J S; Kim, J K; Lee, S J

    2000-08-01

    To investigate the mechanisms of gene action related to the radiation resistance in microorganisms could be essentially helpful for the development of radiation protectants and hormeric effects of low dose radiation. This book described isolation of radiation-resistant microorganisms, induction of radiation-resistant and functionally improved mutants by gamma-ray radiation, cloning and analysis of the radiation resistance related genes and analysis of the expressed proteins of the radiation resistant related genes.

  13. Biological improvement of radiation resistance

    International Nuclear Information System (INIS)

    Chun, K. J.; Lee, Y. K.; Kim, J. S.; Kim, J. K.; Lee, S. J.

    2000-08-01

    To investigate the mechanisms of gene action related to the radiation resistance in microorganisms could be essentially helpful for the development of radiation protectants and hormeric effects of low dose radiation. This book described isolation of radiation-resistant microorganisms, induction of radiation-resistant and functionally improved mutants by gamma-ray radiation, cloning and analysis of the radiation resistance related genes and analysis of the expressed proteins of the radiation resistant related genes

  14. Heat-resistant materials

    CERN Document Server

    1997-01-01

    This handbook covers the complete spectrum of technology dealing with heat-resistant materials, including high-temperature characteristics, effects of processing and microstructure on high-temperature properties, materials selection guidelines for industrial applications, and life-assessment methods. Also included is information on comparative properties that allows the ranking of alloy performance, effects of processing and microstructure on high-temperature properties, high-temperature oxidation and corrosion-resistant coatings for superalloys, and design guidelines for applications involving creep and/or oxidation. Contents: General introduction (high-temperature materials characteristics, and mechanical and corrosion properties, and industrial applications); Properties of Ferrous Heat-Resistant Alloys (carbon, alloy, and stainless steels; alloy cast irons; and high alloy cast steels); Properties of superalloys (metallurgy and processing, mechanical and corrosion properties, degradation, and protective coa...

  15. Fast Resistive Bolometer

    International Nuclear Information System (INIS)

    Deeney, C.; Fehl, D.L.; Hanson, D.L.; Keltner, N.R.; McGurn, J.S.; McKenney, J.L.; Spielman, R.B.

    1999-01-01

    Resistive bolometry is an accurate, robust, spectrally broadband technique for measuring absolute x-ray fluence and flux. Bolometry is an independent technique for x-ray measurements that is based on a different set of physical properties than other diagnostics such as x-ray diodes, photoconducting detectors, and P-I-N diodes. Bolometers use the temperature-driven change in element resistivity to determine the total deposited energy. The calibration of such a device is based on fundamental material properties and its physical dimensions. We describe the use of nickel and gold bolometers to measure x rays generated by high-power z pinches on Sandia's Saturn and Z accelerators. The Sandia bolometer design described herein has a pulse response of ∼1 ns. We describe in detail the fabrication, fielding, and data analysis issues leading to highly accurate x-ray measurements. The fundamental accuracy of resistive bolometry will be discussed

  16. Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates

    International Nuclear Information System (INIS)

    Chen Xinman; Zhang Hu; Ruan Kaibin; Shi Wangzhou

    2012-01-01

    Highlights: ► Annealing effect on the bipolar resistive switching behaviors of BiFeO 3 thin films with Pt/BiFeO 3 /LNO was reported. ► Rectification property was explained from the asymmetrical contact between top and bottom interfaces and the distinct oxygen vacancy density. ► The modification of Schottky-like barrier was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices. - Abstract: We reported the annealing effect on the electrical behaviors of BiFeO 3 thin films integrated on LaNiO 3 (LNO) layers buffered Si substrates by sol–gel spin-coating technique. All the BiFeO 3 thin films exhibit the reversible bipolar resistive switching behaviors with Pt/BiFeO 3 /LNO configuration. The electrical conduction mechanism of the devices was dominated by the Ohmic conduction in the low resistance state and trap-controlled space charged limited current in the high resistance state. Good diode-like rectification property was observed in device with BiFeO 3 film annealed at 500 °C, but vanished in device with BiFeO 3 film annealed at 600 °C. This was attributed to the asymmetrical contact between top and bottom interfaces as well as the distinct oxygen vacancy density verified by XPS. Furthermore, the modification of Schottky-like barrier due to the drift of oxygen vacancies was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices.

  17. Kinetically Controlled Drug Resistance

    DEFF Research Database (Denmark)

    Sun, Xin E.; Hansen, Bjarne Gram; Hedstrom, Lizbeth

    2011-01-01

    The filamentous fungus Penicillium brevicompactum produces the immunosuppressive drug mycophenolic acid (MPA), which is a potent inhibitor of eukaryotic IMP dehydrogenases (IMPDHs). IMPDH catalyzes the conversion of IMP to XMP via a covalent enzyme intermediate, E-XMP*; MPA inhibits by trapping E...... of resistance is not apparent. Here, we show that, unlike MPA-sensitive IMPDHs, formation of E-XMP* is rate-limiting for both PbIMPDH-A and PbIMPDH-B. Therefore, MPA resistance derives from the failure to accumulate the drug-sensitive intermediate....

  18. [Resistance risk, cross-resistance and biochemical resistance mechanism of Laodelphax striatellus to buprofezin].

    Science.gov (United States)

    Mao, Xu-lian; Liu, Jin; Li, Xu-ke; Chi, Jia-jia; Liu, Yong-jie

    2016-01-01

    In order to investigate the resistance development law and biochemical resistance mechanism of Laodelphax striatellus to buprofezin, spraying rice seedlings was used to continuously screen resistant strains of L. striatellus and dipping rice seedlings was applied to determine the toxicity and cross-resistance of L. striatellus to insecticides. After 32-generation screening with buprofezin, L. striatellus developed 168.49 folds resistance and its reality heritability (h2) was 0.11. If the killing rate was 80%-90%, L. striatellus was expected to develop 10-fold resistance to buprofezin only after 5 to 6 generations breeding. Because the actual reality heritability of field populations was usually lower than that of the resistant strains, the production of field populations increasing with 10-fold resistance would need much longer time. The results of cross-resistance showed that resistant strain had high level cross-resistance with thiamethoxam and imidacloprid, low level cross-resistance with acetamiprid, and no cross-resistance with pymetrozine and chlorpyrifos. The activity of detoxification enzymes of different strains and the syergism of synergist were measured. The results showed that cytochrome P450 monooxygenase played a major role in the resistance of L. striatellus to buprofezin, the esterase played a minor role and the GSH-S-transferase had no effect. Therefore, L. striatellus would have high risk to develop resistance to buprofezin when used in the field and might be delayed by using pymetrozine and chlorpyrifos.

  19. Resistive effects in EXTRAP

    International Nuclear Information System (INIS)

    Tendler, M.

    1987-01-01

    Theoretical studies of the resistive equilibrium and stability of an EXTRAP Z-pinch are reported. Extending the previous analysis we reasses properties of the resistive equilibrium in EXTRAP with the emphasis on the time dependence of the latter. We also qualitatively consider the role of resistive instabilities in EXTRAP, showing that the typical timescale of the filamentation of the discharge (i.e., the non-linear development of the tearing instability) is comparable, at present, to the discharge duration. On the other hand, we emphasize that this phenomenon may still be consistent with the experimental observation of the Bennet's equilibrium. The processes of the current start-up and ramp-up are also analysed for EXTRAP and it is shown that the peculiarities of these processes may lead to the compression oscillations around an evolving rather stable equilibrium. Finally, some consequences of the average minimum-B concept for EXTRAP are discussed and it is shown that this issue virtually reduces to the appearance of the negative curvature of the magnetic field at the periphery. The maximum attainable value of β at the periphery of the pinch is obtained, as required by the ballooning stability criterion. The influence of the finite resistivity on the ballooning mode is also estimated. (orig.)

  20. Shatter resistance in sesame

    International Nuclear Information System (INIS)

    Langham, D.R.

    2001-01-01

    The majority of the world's sesame (probably over 99%) is shattering, and most of the harvest is manual. In a non-mechanized environment the last thing that farmers want is seed retention (''hold''). They want the seed to fall out as easily as possible. The amount of shattering desired is dependent on the method of harvest. By 1944 the first stage of mechanization was initiated. The indehiscent mutant found in 1943 showed in succeeding generations that it was controlled monogenically, and the homozygous recessive (id/id) gave indehiscence. Unfortunately, the id allele had pleiotropic effects including cupped leaves, twisted stems, short seed pods, semi-sterility, and low yield. Improvements in shatter resistance are relative within a specific program. For example, Sesaco has improved its shatter resistance each year, and still for the USA methods of harvest, further improvements are necessary to allow for better retention in adverse weather. This paper presents a methodology for quantifying shatter resistance so researchers can compare levels of shatter resistance between programs. (author)

  1. Corrosion resistant steel

    International Nuclear Information System (INIS)

    Zubchenko, A.S.; Borisov, V.P.; Latyshev, V.B.

    1980-01-01

    Corrosion resistant steel for production of sheets and tubes containing C, Mn, Cr, Si, Fe is suggested. It is alloyed with vanadium and cerium for improving tensile properties and ductility. The steel can be melted by a conventional method in electric-arc or induction furnaces. The mentioned steel is intended to be used as a substitute for nickel-bearing austenitic steels

  2. Viscous, Resistive Magnetorotational Modes

    DEFF Research Database (Denmark)

    Pessah, Martin Elias; Chan, Chi-kwan

    2008-01-01

    We carry out a comprehensive analysis of the behavior of the magnetorotational instability (MRI) in viscous, resistive plasmas. We find exact, non-linear solutions of the non-ideal magnetohydrodynamic (MHD) equations describing the local dynamics of an incompressible, differentially rotating...

  3. The resistance brand

    DEFF Research Database (Denmark)

    Gulbrandsen, Ib Tunby; Just, Sine Nørholm; Uldam, Julie

    “The Trump-resistance will be commercialized” (Hess, 2017). Paraphrasing political activist and artist Gil Scott-Heron’s famous title seems increasingly apt as one corporation after the other voices sympathy with social protesters and/or dismay at the politics of the White House incumbent. But how...

  4. Corrosion resistant composite materials

    International Nuclear Information System (INIS)

    Ul'yanin, E.A.

    1986-01-01

    Foundations for corrosion-resistant composite materials design are considered with account of components compatibility. Fibrous and lamellar composites with metal matrix, dispersion-hardened steels and alloys, refractory metal carbides-, borides-, nitrides-, silicides-based composites are described. Cermet compositions and fields of their application, such as protective coatings for operation in agressive media at high temperatures, are presented

  5. Resistive effects in EXTRAP

    International Nuclear Information System (INIS)

    Tendler, M.

    1985-10-01

    Theoretical studies of the resistive equilibrium and stability of an EXTRAP z-pinch are reported. Extending the previous analysis we reassess properties of the resistive equilibrium in EXTRAP with the emphasis on the time dependence of the latter. We also qualitatively consider the role of resistive instabilities in EXTRAP, showing that the typical timescale of the filamentation of the discharge (i.e. the non-linear development of the tearing instability) is comparable at present, to the discharge duration. On the other hand, we emphasize that this phenomenon may still be consistent with the experimental observation of the Bennet's equilibrium. The processes of the current start-up and ramp up are also analysed for EXTRAP and it is shown that the peculiarities if these processes in EXTRAP may lead to the compression oscillations around and evolving rather stable equilibrium. The frequency of these oscillations is given. Finally, some consequences of the average minimum-B concept for EXTRAP are discussed and it is shown that this issue virtually reduces to the appearance of the negative curvature of the magnetic field at the periphery. The maximum attainable value of β at the periphery of the pinch is obtained, as required by the ballooning stability criterion. The influence of the finite resistivity on the ballooning mode is also estimated. With 4 figures and 21 refs. (Author)

  6. Oseltamivir-Resistant Flu

    Centers for Disease Control (CDC) Podcasts

    2012-04-13

    Dr. Aaron Storms, an Epidemic Intelligence Service (EIS) officer at CDC, discusses his paper about oseltamivir-resistant H1N1flu.  Created: 4/13/2012 by National Center for Emerging and Zoonotic Infectious Diseases (NCEZID).   Date Released: 4/17/2012.

  7. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Pin it Email Print The Food and Drug Administration's (FDA's) Center for Veterinary Medicine (CVM) produced a nine-minute animation explaining how antimicrobial resistance both emerges and proliferates among bacteria. Over time, the use of antimicrobial drugs will result in ...

  8. Multidrug-Resistant Tuberculosis

    Centers for Disease Control (CDC) Podcasts

    In this podcast, Dr. Oeltmann discusses multidrug-resistant tuberculosis. An outbreak occurred in Thailand, which led to 45 cases in the U.S. This serious illness can take up to 2 years to treat. MDR TB is a real threat and a serious condition.

  9. Animation of Antimicrobial Resistance

    Medline Plus

    Full Text Available ... Español Search FDA Submit search Popular Content Home Food Drugs Medical Devices Radiation-Emitting Products Vaccines, ... Biologics Animal & Veterinary Cosmetics Tobacco Products Animal & Veterinary Home Animal & Veterinary Safety & Health Antimicrobial Resistance Animation of ...

  10. Overcoming Resistance to Change

    Science.gov (United States)

    Hull, Ted H.; Balka, Don S.; Miles, Ruth Harbin

    2010-01-01

    Resistance to change is a major obstacle in developing and implementing effective instructional programs, yet it is rarely considered, discussed, or addressed. The school leaders who are responsible for improvement frequently feel that their efforts are being blocked or thwarted. For the most part, they are correct, but they may not realize that…

  11. Antibiotic Resistance and Fungus

    Centers for Disease Control (CDC) Podcasts

    2017-02-28

    Dr. David Denning, President of the Global Action Fund for Fungal Infections and an infectious diseases clinician, discusses antimicrobial resistance and fungus.  Created: 2/28/2017 by National Center for Emerging and Zoonotic Infectious Diseases (NCEZID).   Date Released: 2/28/2017.

  12. Approach to the effect of concrete resistivity in the corrosion of rebars in concrete

    Directory of Open Access Journals (Sweden)

    Andrade, C.

    1987-09-01

    Full Text Available The concrete resistivity has been considered as a factor which affects the corrosion rate of the rebars. Untill now the only relation found has been stablished between potentials and resistivity for steel embedded in Chloride contaminated concrete. In this paper a comparison between corrosion rate of rebars, determined from Polarization Resistance method, and Electrical Resistance data measured through the electronic compensation of the ohmic drop are given. The results of icorr and Rohm has been measured for rebars embedded in mortar made with three different types of cement. The specimens were submited to an accelerated carbonation. The relation between icorr and Rohm is quite similar in all the cases and suggests that the concrete electrical resistivity may be a controling factor of the corrosion rate of the rebars.

    La resistividad del hormigón se ha venido considerando como uno de los factores que afectan a la velocidad de corrosión de las armaduras, aunque, hasta ahora, la única relación encontrada ha sido la establecida entre los potenciales y la resistividad para acero embebido en hormigón contaminado por cloruros. En este trabajo se establecen comparaciones entre velocidad de corrosión de las armaduras, medida a través del método de determinación de la Resistencia de Polarización, y los datos de resistencia eléctrica medidos a través de la compensación de caída óhmica. Los resultados de icorr y Rohm se han medido en armaduras embebidas en mortero fabricado con tres tipos de cemento a los que se ha sometido a un proceso de carbonatación acelerada. La relación entre icorr y Rohm es muy similar en todos los casos y sugiere que la resistencia del hormigón puede actuar como un factor controlante de la velocidad de corrosión de las armaduras.

  13. Measurement of Dynamic Resistance in Resistance Spot Welding

    DEFF Research Database (Denmark)

    Wu, Pei; Zhang, Wenqi; Bay, Niels

    Through years, the dynamic resistance across the electrodes has been used for weld quality estimation and contact resistance measurement. However, the previous methods of determining the dynamic resistance were mostly based on measuring the voltage and current on the secondary side of the transfo......Through years, the dynamic resistance across the electrodes has been used for weld quality estimation and contact resistance measurement. However, the previous methods of determining the dynamic resistance were mostly based on measuring the voltage and current on the secondary side...... of the transformer in resistance welding machines, implying defects from induction noise and interference with the leads connected to the electrodes for measuring the voltage. In this study, the dynamic resistance is determined by measuring the voltage on the primary side and the current on the secondary side...

  14. HIV resistance testing and detected drug resistance in Europe

    DEFF Research Database (Denmark)

    Schultze, Anna; Phillips, Andrew N; Paredes, Roger

    2015-01-01

    to Southern Europe. CONCLUSIONS: Despite a concurrent decline in virological failure and testing, drug resistance was commonly detected. This suggests a selective approach to resistance testing. The regional differences identified indicate that policy aiming to minimize the emergence of resistance......OBJECTIVES: To describe regional differences and trends in resistance testing among individuals experiencing virological failure and the prevalence of detected resistance among those individuals who had a genotypic resistance test done following virological failure. DESIGN: Multinational cohort...... study. METHODS: Individuals in EuroSIDA with virological failure (>1 RNA measurement >500 on ART after >6 months on ART) after 1997 were included. Adjusted odds ratios (aORs) for resistance testing following virological failure and aORs for the detection of resistance among those who had a test were...

  15. Resistance of Bacteria to Biocides.

    Science.gov (United States)

    Maillard, Jean-Yves

    2018-04-01

    Biocides and formulated biocides are used worldwide for an increasing number of applications despite tightening regulations in Europe and in the United States. One concern is that such intense usage of biocides could lead to increased bacterial resistance to a product and cross-resistance to unrelated antimicrobials including chemotherapeutic antibiotics. Evidence to justify such a concern comes mostly from the use of health care-relevant bacterial isolates, although the number of studies of the resistance characteristics of veterinary isolates to biocides have increased the past few years. One problem remains the definition of "resistance" and how to measure resistance to a biocide. This has yet to be addressed globally, although the measurement of resistance is becoming more pressing, with regulators both in Europe and in the United States demanding that manufacturers provide evidence that their biocidal products will not impact on bacterial resistance. Alongside in vitro evidence of potential antimicrobial cross-resistance following biocide exposure, our understanding of the mechanisms of bacterial resistance and, more recently, our understanding of the effect of biocides to induce a mechanism(s) of resistance in bacteria has improved. This article aims to provide an understanding of the development of antimicrobial resistance in bacteria following a biocide exposure. The sections provide evidence of the occurrence of bacterial resistance and its mechanisms of action and debate how to measure bacterial resistance to biocides. Examples pertinent to the veterinary field are used where appropriate.

  16. Resistant plasmid profile analysis of multidrug resistant Escherichia ...

    African Journals Online (AJOL)

    Multiple drug resistance isolates causing UTI has seri- ous implications for the empiric therapy against patho- genic isolates and for the possible co-selection of antimicrobial resistant mediated by multi drug resistant plasmids21,22. E. coli from clinical isolates are known to harbour plasmids of different molecular sizes23.

  17. Resistant plasmid profile analysis of multidrug resistant Escherichia ...

    African Journals Online (AJOL)

    Background: Multi-drug resistant Escherichia coli has become a major threat and cause of many urinary tract infections (UTIs) in Abeokuta, Nigeria. Objectives: This study was carried out to determine the resistant plasmids of multidrug resistant Escherichia coli isolated from (Urinary tract infections)UTIs in Abeokuta.

  18. Are Sewage Treatment Plants Promoting Antibiotic Resistance?

    Science.gov (United States)

    1. Introduction 1.1. How bacteria exhibit resistance 1.1.1. Resistance to -lactams 1.1.2. Resistance to sulphonamides and trimethoprim 1.1.3. Resistance to macrolides 1.1.4. Resistance to fluoroquinolones 1.1.5. Resistance to tetracyclines 1.1.6. Resistance to nitroimidaz...

  19. Metabolic Resistance in Bed Bugs

    Directory of Open Access Journals (Sweden)

    Omprakash Mittapalli

    2011-03-01

    Full Text Available Blood-feeding insects have evolved resistance to various insecticides (organochlorines, pyrethroids, carbamates, etc. through gene mutations and increased metabolism. Bed bugs (Cimex lectularius are hematophagous ectoparasites that are poised to become one of the major pests in households throughout the United States. Currently, C. lectularius has attained a high global impact status due to its sudden and rampant resurgence. Resistance to pesticides is one factor implicated in this phenomenon. Although much emphasis has been placed on target sensitivity, little to no knowledge is available on the role of key metabolic players (e.g., cytochrome P450s and glutathione S-transferases towards pesticide resistance in C. lectularius. In this review, we discuss different modes of resistance (target sensitivity, penetration resistance, behavioral resistance, and metabolic resistance with more emphasis on metabolic resistance.

  20. Galileo's Trajectory with Mild Resistance

    Science.gov (United States)

    Groetsch, C. W.

    2012-01-01

    An aspect of Galileo's classical trajectory that persists in a simple resistance model is noted. The resistive model provides a case study for the classroom analysis of limiting behaviour of an implicitly defined function. (Contains 1 note.)