Electrical evaluation of crack generation in SiN{sub x} and SiO{sub x}N{sub y} thin-film encapsulation layers for OLED displays

Energy Technology Data Exchange (ETDEWEB)

Park, Eun Kil [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Display Research Center, Samsung Display Co., Ltd., Yongin-City, Gyeonggi-Do 446-711 (Korea, Republic of); Kim, Sungmin [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Heo, Jaeyeong, E-mail: jheo@jnu.ac.kr [Department of Materials Science and Engineering, and the Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)

2016-05-01

Highlights: • Crack generation in encapsulation layers were detected by leakage current. • Atomic concentration of SiO{sub x}N{sub y} films affected the bending reliability. • The shapes of the crack tips were affected by the stoichiometry of the SiO{sub x}N{sub y} films. - Abstract: By measuring leakage current density, we detected crack generation in silicon nitride (SiN{sub x}) and silicon oxynitride (SiO{sub x}N{sub y}) thin-film encapsulation layers, and correlated with the films’ water vapor permeability characteristics. After repeated bending cycles, both the changes in water vapor transmission rate and leakage current density were directly proportional to the crack density. Thick SiN{sub x} films had better water vapor barrier characteristics in their pristine state, but cyclic loading led to fast failure. Varying the atomic concentration of the SiO{sub x}N{sub y} films affected their bending reliability. We attribute these differences to changes in the shape of the crack tip as the oxygen content varies.

Do SiO 2 and carbon-doped SiO 2 nanoparticles melt? Insights from QM/MD simulations and ramifications regarding carbon nanotube growth

Science.gov (United States)

Page, Alister J.; Chandrakumar, K. R. S.; Irle, Stephan; Morokuma, Keiji

2011-05-01

Quantum chemical molecular dynamics (QM/MD) simulations of pristine and carbon-doped SiO 2 nanoparticles have been performed between 1000 and 3000 K. At temperatures above 1600 K, pristine nanoparticle SiO 2 decomposes rapidly, primarily forming SiO. Similarly, carbon-doped nanoparticle SiO 2 decomposes at temperatures above 2000 K, primarily forming SiO and CO. Analysis of the physical states of these pristine and carbon-doped SiO 2 nanoparticles indicate that they remain in the solid phase throughout decomposition. This process is therefore one of sublimation, as the liquid phase is never entered. Ramifications of these observations with respect to presently debated mechanisms of carbon nanotube growth on SiO 2 nanoparticles will be discussed.

Vibrational mode frequencies of silica species in SiO2-H2O liquids and glasses from ab initio molecular dynamics.

Science.gov (United States)

Spiekermann, Georg; Steele-MacInnis, Matthew; Schmidt, Christian; Jahn, Sandro

2012-04-21

Vibrational spectroscopy techniques are commonly used to probe the atomic-scale structure of silica species in aqueous solution and hydrous silica glasses. However, unequivocal assignment of individual spectroscopic features to specific vibrational modes is challenging. In this contribution, we establish a connection between experimentally observed vibrational bands and ab initio molecular dynamics (MD) of silica species in solution and in hydrous silica glass. Using the mode-projection approach, we decompose the vibrations of silica species into subspectra resulting from several fundamental structural subunits: The SiO(4) tetrahedron of symmetry T(d), the bridging oxygen (BO) Si-O-Si of symmetry C(2v), the geminal oxygen O-Si-O of symmetry C(2v), the individual Si-OH stretching, and the specific ethane-like symmetric stretching contribution of the H(6)Si(2)O(7) dimer. This allows us to study relevant vibrations of these subunits in any degree of polymerization, from the Q(0) monomer up to the fully polymerized Q(4) tetrahedra. Demonstrating the potential of this approach for supplementing the interpretation of experimental spectra, we compare the calculated frequencies to those extracted from experimental Raman spectra of hydrous silica glasses and silica species in aqueous solution. We discuss observed features such as the double-peaked contribution of the Q(2) tetrahedral symmetric stretch, the individual Si-OH stretching vibrations, the origin of the experimentally observed band at 970 cm(-1) and the ethane-like vibrational contribution of the H(6)Si(2)O(7) dimer at 870 cm(-1).

Wear Characteristics According of Heat Treatment of Si3N4 with Different Amounts of SiO2 Nano-Colloid

International Nuclear Information System (INIS)

Ahn, Seok Hwan; Nam, Ki Woo

2014-01-01

This study sintered Si 3 N 4 with different amounts of SiO 2 nano-colloid. The surface of a mirror-polished specimen was coated with SiO 2 nano-colloid, and cracks were healed when the specimen was treated at a temperature of 1273 K for 1 h in air. Wear specimen experiments were conducted after heat treatments for 10 min at 1073, 1273, and 1573 K. The heat-treated surface that was coated with the SiO 2 nano-colloid was slightly rougher than the noncoated surface. The oxidation state of the surface according to the heat treatment temperature showed no correlation with the surface roughness. Moreover, the friction coefficient, wear loss, and bending strength were not related to the surface roughness. Si 3 N 4 exhibited an abrasive wear behavior when SKD11 was used as an opponent material. The friction coefficient was proportional to the wear loss, and the bending strength was inversely proportional to the friction coefficient and wear loss. The friction coefficient and wear loss increased with increasing amounts of the SiO 2 nanocolloid. In addition, the friction coefficient was slightly increased by increasing the heat treatment temperature

Permanent bending and alignment of ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Borschel, Christian; Spindler, Susann; Oertel, Michael; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Lerose, Damiana [MPI fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany); Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Bochmann, Arne [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Christiansen, Silke H. [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); MPI fuer die Physik des Lichts, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Nietzsche, Sandor [Zentrum fuer Elektronenmikroskopie, Friedrich-Schiller-Universitaet Jena, Ziegelmuehlenweg 1, 07743 Jena (Germany)

2011-07-01

Ion beams can be used to bend or re-align nanowires permanently, after they have been grown. We have irradiated ZnO nanowires with ions of different species and energy, achieving bending and alignment in various directions. We study the bending of single nanowires as well as the simultaneous alignment of large ensembles of ZnO nanowires in detail. Computer simulations show that the bending is initiated by ion beam induced damage. Dislocations are identified to relax stresses and make the bending and alignment permanent and resistant against annealing procedures.

Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

International Nuclear Information System (INIS)

Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

2008-01-01

Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

Synthesis of bioactive poly(ethylene glycol)/SiO2-CaO-P2O5 hybrids for bone regeneration

International Nuclear Information System (INIS)

Liu Wei; Wu Xiaohong; Zhan Hongbing; Yan Fuhua

2012-01-01

Poly(ethylene glycol) (PEG)/SiO 2 -CaO-P 2 O 5 hybrid xerogels were prepared using a room temperature sol-gel process. The advantage of this hybrid material over conventional composites is the molecular scale interactions between the bioactive inorganic components and the biodegradable organic components. Since PEG was added into the sol when the hydrolysis of tetraethoxysilane occurred, the molecular chain of PEG was penetrated into the SiO 2 networks to form a semi-IPN structure. Due to the excellent biocompatibility and aqueous solubility of PEG molecules, as well as the bioactivity of the inorganic components, the biological and mechanical properties of this hybrid xerogel exhibit great potential for bone regeneration applications. The formation of hydroxyapatite was observed when the xerogel was immersed into simulated body fluid, demonstrating good bioactivity of the hybrid. The cell toxicity test also demonstrated that the hybrid material is suitable for the proliferation of MC3T3-E1 cells. Thus, the PEG/SiO 2 -CaO-P 2 O 5 hybrid xerogel has great potential to meet the demands of bone regeneration materials. - Highlights: ► PEG was penetrated into the SiO 2 networks to form a semi-IPN structure. ► This hybrid xerogel exhibit great potential for bone regeneration applications. ► SEM micrographs confirm the bioactivity of the samples.

Molecular dynamics simulations of the effect of shape and size of SiO2 nanoparticle dopants on insulation paper cellulose

Directory of Open Access Journals (Sweden)

Chao Tang

2016-12-01

Full Text Available The effect of silica nanoparticle (Nano-SiO2 dopants on insulation paper cellulose, and the interaction between them, was investigated using molecular dynamics simulations. The mechanical properties, interactions, and cellulose-Nano-SiO2 compatibility of composite models of cellulose doped with Nano-SiO2 were studied. An increase in Nano-SiO2 size leads to a decrease in the mechanical properties, and a decrease in the anti-deformation ability of the composite model. The binding energies and bond energies per surface area of the composite models indicate that the bonding interaction between spherical Nano-SiO2 and cellulose is the strongest among the four different Nano-SiO2 shapes that are investigated. The solubilities of the four composite models decrease with increasing Nano-SiO2 size, and the difference between the solubility of pure cellulose and those of the composite models increases with increasing Nano-SiO2 size. Good doping effects with the highest cellulose-Nano-SiO2 compatibility are achieved for the cellulose model doped with spherical Nano-SiO2 of 10 Å in diameter. These findings provide a method for modifying the mechanical properties of cellulose by doping, perhaps for improving insulation dielectrics.

Structural study of Na2O-B2O3-SiO2 glasses from molecular simulations using a polarizable force field.

Science.gov (United States)

Pacaud, Fabien; Delaye, Jean-Marc; Charpentier, Thibault; Cormier, Laurent; Salanne, Mathieu

2017-10-28

Sodium borosilicate glasses Na 2 O-B 2 O 3 -SiO 2 (NBS) are complex systems from a structural point of view. Three main building units are present: tetrahedral SiO 4 and BO 4 (B IV ) and triangular BO 3 (B III ). One of the salient features of these compounds is the change of the B III /B IV ratio with the alkali concentration, which is very difficult to capture in force fields-based molecular dynamics simulations. In this work, we develop a polarizable force field that is able to reproduce the boron coordination and more generally the structure of several NBS systems in the glass and in the melt. The parameters of the potential are fitted from density functional theory calculations only, in contrast with the existing empirical potentials for NBS systems. This ensures a strong improvement on the transferability of the parameters from one composition to another. Using this new force field, the structure of NBS systems is validated against neutron diffraction and nuclear magnetic resonance experiments. A special focus is given to the distribution of B III /B IV with respect to the composition and the temperature.

Phase diagram study for the PbO-ZnO-CaO-SiO_2 -“Fe_2O_3 ” system in air with CaO/SiO_2 in 1.1 and PbO/(CaO+SiO_2) in 2.4 weight ratios

International Nuclear Information System (INIS)

Lopez-Rodriguez, Josue; Romero-Serrano, Antonio; Hernandez-Ramirez, Aurelio; Cruz-Ramirez, Alejandro; Almaguer-Guzman, Isaias; Benavides-Perez, Ricardo; Flores-Favela, Manuel

2017-01-01

An experimental study on the phase equilibrium and the liquidus isotherms for the PbO-ZnO-CaO-SiO_2 -“Fe_2O_3 ” system with CaO/SiO_2 in 1.1 and PbO/(CaO+SiO_2) in 2.4 weight ratios, respectively, was carried out in the temperature range 1100-1300 deg C (1373-1573 K). High temperature phases were determined by the equilibrium-quenching method. Results are presented in the form of pseudo-ternary sections “Fe_2O_3 ”-ZnO-(PbO+CaO+SiO_2). X-Ray diffraction (XRD) and SEM-EDS results showed that the phase equilibria in this system are dominated by the high melting temperature spinel and zincite phases. It was observed that if the system is at a temperature below 1300 deg C and the total (Fe_2O_3 + ZnO) is greater than 20 wt%, spinel and/or zincite will be present in the slag system. As an application of the phase diagram, the liquid phase compositions below the liquidus surface were estimated, then their viscosities were calculated using FACTSage software. (author)

Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

2011-03-15

We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

International Nuclear Information System (INIS)

Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

2007-01-01

Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

Synthesis of geopolymer from spent FCC: Effect of SiO2/Al2O<3 and Na2O/SiO2 molar ratios

Directory of Open Access Journals (Sweden)

Trochez, J. J.

2015-03-01

Full Text Available This paper assesses the feasibility of using a spent fluid catalytic cracking catalyst (SFCC as precursor for the production of geopolymers. The mechanical and structural characterization of alkali-activated SFCC binders formulated with different overall (activator + solid precursor SiO2/Al2O3 and Na2O/SiO2 molar ratios are reported. Formation of an aluminosilicate ‘geopolymer’ gel is observed under all conditions of activation used, along with formation of zeolites. Increased SiO2/Al2O3 induces the formation of geopolymers with reduced mechanical strength, for all the Na2O/SiO2 ratios assessed, which is associated with excess silicate species supplied by the activator. This is least significant at increased alkalinity conditions (higher Na2O/SiO2 ratios, as larger extents of reaction of the spent catalyst are achieved. SiO2/Al2O3 and Na2O/SiO2 ratios of 2.4 and 0.25, respectively, promote the highest compressive strength (67 MPa. This study elucidates the great potential of using SFCC as precursor to produce sustainable ceramic-like materials via alkali-activation.Este artículo estudia la factibilidad de usar un catalizador gastado del proceso de craqueo (SFCC para la producción de geopolímeros. Se evalúan las características mecánicas y estructurales de los geopolímeros producidos con diferentes relaciones molares (activador + precursor solido de SiO2/Al2O3 y Na2O/SiO2. La formación de un gel geopolimérico de tipo aluminosilicato se observa a las diferentes condiciones evaluadas, así como la formación de zeolitas. Un incremento en la relación SiO2/Al2O3 genera geopolímeros de baja resistencia mecánica, a las diferentes relaciones molares Na2O/SiO2 evaluadas, como consecuencia del exceso de especies silicato provenientes del activador. Este efecto es menos significativo al incrementar las condiciones de alcalinidad (mayores relaciones Na2O/SiO2, ya que un mayor grado de reacción del catalizador gastado es alcanzado. Las

Rietveld refinement of the orthorhombic Pbca structures of Rb2CdSi5O12, Cs2MnSiO5O12, Cs2CoSi5O12 and Cs2NiSi5O12 leucites by synchrotron X-ray powder diffraction

International Nuclear Information System (INIS)

Bell, A.M.T.; Henderson, C.M.B.

1996-01-01

Analysis of high-resolution synchrotron X-ray powder diffraction patterns for hydrothermally synthesized Rb 2 CdSi 5 O 12 and Cs 2 MnSi 5 O 12 leucite analogues, and dry-synthesized Cs 2 CoSi 5 O 12 and Cs 2 NiSi 5 O 12 leucite analogues showed that they have an orthorhombic Pbca structure. The structures have been refined by the Rietveld method, showing that the tetrahedrally coordinated atoms (Si, Cd, Mn, Co and Ni) are ordered on separate sites. The Cs 2 MnSi 5 O 12 , Cs 2 CoSi 5 O 12 and Cs 2 NiSi 5 O 12 leucite samples are unusual in containing SiO 4 tetrahedra which are more distorted, on average, than the larger MnO 4 , CoO 4 and NiO 4 tetrahedra. The JCPDS file numbers for Rb 2 CdSi 5 O 12 , Cs 2 MnSi 5 O 12 and Cs 2 CoSi 5 O 12 are 46-1491, 46-1492 and 46-1493, respectively. (orig.)

THE THERMODYNAMIC PROPERTIES OF MELTS OF DOUBLE SYSTEM MgO – Al2O3, MgO – SiO2, MgO – CaF2, Al2O3 – SiO2, Al2O3 – CaF2, SiO2 – CaF2

Directory of Open Access Journals (Sweden)

В. Судавцова

2012-04-01

Full Text Available Methodology of prognostication of thermodynamics properties of melts is presented from the coordinatesof liquidus of diagram of the state in area of equilibria a hard component is solution, on which energies ofmixing of Gibbs are expected in the double border systems of MgO – Al2O3, MgO – SiO2, MgO – CaF2,Al2O3 – SiO2, Al2O3 - CaF2, SiO2 - CaF2. For the areas of equilibrium there is quasibinary connection(MgAl2O4, Mg2SiO4, Al6Si2O13 – a grout at calculations was used equalization of Hauffe-Wagner. Theobtained data comport with literary

SiO mass spectrometry and Si-2p photoemission spectroscopy for the study of oxidation reaction dynamics of Si(001) surface by supersonic O sub 2 molecular beams under 1000K

CERN Document Server

Teraoka, Y; Moritani, K

2003-01-01

The Si sup 1 sup 8 O desorption yield was measured in the Si(001) surface temperature region from 900K to 1300K at the sup 1 sup 8 O sub 2 incident energies of 0.7eV, 2.2eV and 3.3eV. The Si sup 1 sup 8 O desorption yield in a surface temperature region higher than 1000K increased with increasing incident energy, indicating the incident-energy-induced oxidation and the variation of angular distribution of Si sup 1 sup 8 O desorption. Inversely, the Si sup 1 sup 8 O desorption yield decreased with increasing incident energy in the region from 900K to 1000K, indicating the coexistence of the passive and the active oxidation. In order to clarify the reaction mechanisms of the later phenomenon, real-time in-situ Si-2p photoemission spectroscopy has been performed. The obtained Si-2p spectra showed the variation of the oxide-nuclei quality from the sub-oxide-rich structure to the SiO sub 2 -rich structure. The formation of the SiO sub 2 structure suppresses the SiO desorption due to the enhanced O sub 2 sticking a...

Bioactivity of gel-glass powders in the CaO-SiO2 system: a comparison with ternary (CaO-P2O5-SiO2) and quaternary glasses (SiO2-CaO-P2O5-Na2O).

Science.gov (United States)

Saravanapavan, Priya; Jones, Julian R; Pryce, Russell S; Hench, Larry L

2003-07-01

Bioactive glasses react chemically with body fluids in a manner that is compatible with the repair processes of the tissues. This results in the formation of an interfacial bond between the glasses and living tissue. Bioactive glasses also stimulate bone-cell proliferation. This behavior is dependent on the chemical composition as well as the surface texture of the glasses. It has been recently reported that gel-derived monolith specimens in the binary SiO2 - CaO are bioactive over a similar molar range of SiO2 content as the previously studied ternary CaO-P2O5-SiO2 system. In this report, the preparation and bioactivity of the binary gel-glass powder with 70 mol % SiO2 is discussed and its bioactivity is compared with the melt-derived 45S5 (quaternary) Bioglass and sol-gel-derived 58S (ternary) bioactive gel-glass compositions. Dissolution kinetic parameters K(1) and K(2) were also computed based on the silicon release for all glass powders. It was shown that the simple two-component SiO2-CaO gel-glass powder is bioactive with comparable dissolution rates as the clinically used melt-derived 45S5 Bioglass powder and extensively studied sol-gel-derived 58S gel-glass powder. Copyright 2003 Wiley Periodicals, Inc.

Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

International Nuclear Information System (INIS)

Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

1990-01-01

Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

Light emissions from LiNbO sub 3 /SiO sub 2 /Si structures

CERN Document Server

Wu, X L; Tang, N; Deng, S S; Bao, X M

2003-01-01

LiNbO sub 3 (LN) films with a high degree of (006) texture were deposited on Si-based dense SiO sub 2 layers by pulsed laser deposition. After annealing, the LN/SiO sub 2 /Si structures were revealed to have ultraviolet-, green-, and red-emitting properties related to self-trapped excitons and E' defect pairs in the SiO sub 2 surface, which are induced by the photorefractive effect of the LN films. The emission wavelength can be tuned by introducing different dopants into the LN films. Waveguiding properties of the structures were demonstrated. The results obtained indicate that the LN/SiO sub 2 /Si structures could be expected to have important applications in modern optoelectronic integration. (letter to the editor)

Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

International Nuclear Information System (INIS)

Leung, To Chi.

1991-01-01

A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

Magnetic SiO2/Fe3O4 colloidal crystals

International Nuclear Information System (INIS)

Huang, C-K; Hou, C-H; Chen, C-C; Tsai, Y-L; Chang, L-M; Wei, H-S; Hsieh, K-H; Chan, C-H

2008-01-01

We proposed a novel technique to fabricate colloidal crystals by using monodisperse SiO 2 coated magnetic Fe 3 O 4 (SiO 2 /Fe 3 O 4 ) microspheres. The magnetic SiO 2 /Fe 3 O 4 microspheres with a diameter of 700 nm were synthesized in the basic condition with ferric sulfate, ferrous sulfate, tartaric acid and tetraethyl orthosilicate (TEOS) in the reaction system. Monodisperse SiO 2 /Fe 3 O 4 superparamagnetic microspheres have been successfully used to fabricate colloidal crystals under the existing magnetic field

SiO2 Glass Density to Lower-Mantle Pressures

DEFF Research Database (Denmark)

Petitgirard, Sylvain; Malfait, Wim J.; Journaux, Baptiste

2017-01-01

and present Earth. SiO2 is the main constituent of Earth's mantle and is the reference model system for the behavior of silicate melts at high pressure. Here, we apply our recently developed x-ray absorption technique to the density of SiO2 glass up to 110 GPa, doubling the pressure range...... for such measurements. Our density data validate recent molecular dynamics simulations and are in good agreement with previous experimental studies conducted at lower pressure. Silica glass rapidly densifies up to 40 GPa, but the density trend then flattens to become asymptotic to the density of SiO2 minerals above 60...... GPa. The density data present two discontinuities at similar to 17 and similar to 60 GPa that can be related to a silicon coordination increase from 4 to a mixed 5/6 coordination and from 5/6 to sixfold, respectively. SiO2 glass becomes denser than MgSiO3 glass at similar to 40 GPa, and its density...

Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

International Nuclear Information System (INIS)

Suvorova, N.A.; Lopez, C.M.; Irene, E.A.; Suvorova, A.A.; Saunders, M.

2004-01-01

(Ba,Sr)TiO 3 (BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO 2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO 2 on Si or 3.5 nm SiO 2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO 2 . Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density D it of an order of magnitude for oxidized Si substrates with a thicker SiO 2 underlayer. Further reduction of D it was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization

Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

Science.gov (United States)

Suvorova, N. A.; Lopez, C. M.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

2004-03-01

(Ba,Sr)TiO3(BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.

Density functional theory study of the structural and bonding mechanism of molecular oxygen (O2) with C3Si

Science.gov (United States)

Parida, Saroj K.; Behera, C.; Sahu, Sridhar

2018-07-01

The investigations of pure and heteroatom doped carbon clusters have created great interest because of their enormous prospective applications in various research zones, for example, optoelectronics, semiconductors, material science, energy storage devices, astro-science and so on. In this article, the interaction of molecular oxygen (O2) with C3Si has explored within a density functional theory (DFT). Different possible types of structure for C3SiO2 have collected. Among five different kinds of structure, the structure-1a, 1A1 is more energetically stable. The nature of the bonding of O2 and C3Si, in C3SiO2 has been studied by using Bader's topological analysis of the electron charge density distribution ρ(r) , Laplacian ∇2 ρ(r) and total energy density H(r) at the bond critical points (BCPs) of the structures within the framework of the atoms in molecules theory (AIM). The bonding mechanism of O2 and C3Si in C3SiO2 prompts to the fundamental understanding of the interaction of C3Si with oxygen molecule. It is interesting to note that, two types of bonding mechanism are established in same C3SiO2 system such as (i) shared-kind interactions (ii) closed-shell interactions. From various kinds of structure, Csbnd C bonds in all structures are shown as shared-kind interactions whereas Csbnd Si, Osbnd O bonds are classified as closed-shell type interactions with a certain degree of covalent character.

Thermodynamics of Bi2O3-SiO2 system

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Onderka B.

2017-01-01

Full Text Available Thermodynamic properties of the liquid Bi2O3-SiO2 solutions were determined from the results of the electrochemical measurements by use of the solid oxide galvanic cells with YSZ (Yttria-Stabilized-Zirconia electrolyte. Activities of Bi2O3 in the solutions were determined for 0.2, 0.3, 0.4, and 0.5 SiO2 mole fractions in the temperature range 1073-1293 K from measured electromotive force (e.m.f of the solid electrolyte galvanic cell: Bi, Bi2O3-SiO2 | YSZ | air (pO2 = 0.213 bar Additionally, heat capacity data obtained for two solid phases 6Bi2O3•SiO2 and 2Bi2O3•3SiO2 were included into optimization of thermodynamic properties of the system. Optimization procedure was supported by differential thermal analysis (DTA data obtained in this work as well as those accepted from the literature. Using the data obtained in this work, and the information about phase equilibria found in the literature, binary system Bi2O3-SiO2 was assessed with the ThermoCalc software.

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Directory of Open Access Journals (Sweden)

Jiongjiong Mo

2017-01-01

Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

The melting curve of MgSiO3 perovskite from molecular dynamics simulation

International Nuclear Information System (INIS)

Liu Zijiang; Zhang Cairong; Sun Xiaowei; Song Ting; Chu Yandong; Hu Jianbo

2011-01-01

The high-pressure melting curve of MgSiO 3 perovskite is simulated by using the constant temperature and pressure molecular dynamics method combined with effective pair potentials. The simulated structural properties of MgSiO 3 perovskite at ambient conditions reproduce the experiments and agree well with other theoretical works. The calculated equation of state is very successful in reproducing accurately the recent experimental data over wide pressure ranges. The predicted high-pressure melting curve is in good agreement with the recent experimental and the latest theoretical ones, and the melting curve up to the core-mantle boundary pressure, being very steep at lower pressures, rapidly flattens on increasing pressure. The present results also suggest the validity of the experimental data of Zerr and Boehler (1993 Science 262 553) and Shen and Lazor (1995 J. Geophys. Res. 100 17699).

Thermal stability of polyoxometalate compound of Keggin K8[2-SiW11O39]∙nH2O supported with SiO2

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Yunita Sari M A

2017-06-01

Full Text Available Synthesis through sol-gel method and characterization of polyoxometalate compound of K8[b2-SiW11O39]∙nH2O supported with SiO2 have been done. The functional groups of polyoxometalate compound  was characterized by FT-IR spectrophotometer for the fungtional groups and the degree’s of crystalinity  using XRD. The acidity of K8[b2-SiW11O39]∙nH2O/SiO2 was determined qualitative analysis using ammonia and pyridine adsorption and the quantitative analysis using potentiometric titration method. The results of FT-IR spectrum of K8[b2-SiW11O39]∙nH2O appeared at  wavenumber 987.55 cm-1 (W=O, 864.11 cm-1 (W-Oe-W, 756.1 cm-1 (W-Oc-W, 3425.58 cm-1 (O-H, respectively and spectrum of  K8[b2-SiW11O39]SiO2 appeared at wavenumber  956.69 cm-1 (W=O, 864.11 cm-1 (W-Oe-W, 3448.72 cm-1 (O-H, respectively. The diffraction of XRD pattern of K8[b2-SiW11O39]∙nH2O and K8[b2-SiW11O39]∙nH2O/SiO2 compounds show high crystalinity. The acidic properties showed K8[b2-SiW11O39]∙nH2O/SiO2 more acidic compared to K8[b2-The SiW11O39]∙nH2O. The qualitative analysis showed pyridine compound adsorbed more of polyoxometalate compound of K8[b2-SiW11O39]∙nH2O/SiO2. Analysis of stability showed that the K8[b2-SiW11O39]∙nH2O/SiO2 at temperature 500°C has structural changes compare to 200-400oC which was indicated from vibration at wavenumber 800-1000 cm-1. Keywords : K8[b2-SiW11O39]∙nH2O, polyoxometalate, SiO2.

The ceramic SiO2 and SiO2-TiO2 coatings on biomedical Ti6Al4VELI titanium alloy

International Nuclear Information System (INIS)

Surowska, B.; Walczak, M.; Bienias, J.

2004-01-01

The paper presents the study of intermediate SiO 2 and SiO 2 -TiO 2 sol-gel coatings and dental porcelain coatings on Ti6Al4VELI titanium alloy. Surface microstructures and wear behaviour by pin-on-disc method of the ceramic coatings were investigated. The analysis revealed: (1) a compact, homogeneous SiO 2 and SiO 2 -TiO 2 coating and (2) that intermediate coatings may provide a durable joint between metal and porcelain, and (3) that dental porcelain on SiO 2 and TiO 2 coatings shows high wear resistance. (author)

Phase diagram study for the PbO-ZnO-CaO-SiO{sub 2} -“Fe{sub 2}O{sub 3} ” system in air with CaO/SiO{sub 2} in 1.1 and PbO/(CaO+SiO{sub 2}) in 2.4 weight ratios

Energy Technology Data Exchange (ETDEWEB)

Lopez-Rodriguez, Josue; Romero-Serrano, Antonio; Hernandez-Ramirez, Aurelio; Cruz-Ramirez, Alejandro, E-mail: romeroipn@hotmail.com [Instituto Politecnico Nacional-ESIQIE, Zacatenco, Mexico City (Mexico); Almaguer-Guzman, Isaias; Benavides-Perez, Ricardo; Flores-Favela, Manuel [Servicios Administrativos Penoles S.A de C.V., Torreon, Coahuila (Mexico)

2017-07-15

An experimental study on the phase equilibrium and the liquidus isotherms for the PbO-ZnO-CaO-SiO{sub 2} -“Fe{sub 2}O{sub 3} ” system with CaO/SiO{sub 2} in 1.1 and PbO/(CaO+SiO{sub 2}) in 2.4 weight ratios, respectively, was carried out in the temperature range 1100-1300 deg C (1373-1573 K). High temperature phases were determined by the equilibrium-quenching method. Results are presented in the form of pseudo-ternary sections “Fe{sub 2}O{sub 3} ”-ZnO-(PbO+CaO+SiO{sub 2}). X-Ray diffraction (XRD) and SEM-EDS results showed that the phase equilibria in this system are dominated by the high melting temperature spinel and zincite phases. It was observed that if the system is at a temperature below 1300 deg C and the total (Fe{sub 2}O{sub 3} + ZnO) is greater than 20 wt%, spinel and/or zincite will be present in the slag system. As an application of the phase diagram, the liquid phase compositions below the liquidus surface were estimated, then their viscosities were calculated using FACTSage software. (author)

Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

Science.gov (United States)

Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

2014-01-01

Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

Stability analysis of SiO2/SiC multilayer coatings

International Nuclear Information System (INIS)

Fu Zhiqiang; Jean-Charles, R.

2006-01-01

The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

Effect of phase transformation and partial crystallization on the mechanical properties of glass and glass-ceramics based on 3CaO.P_2O_5-SiO_2-MgO system

International Nuclear Information System (INIS)

Daguano, J.K.M.F.; Simba, B.G.; Santos, C.

2011-01-01

In this work, glass and glass-ceramics of the 3CaO.P_2O_5-SiO_2-MgO system were developed aiming to produce different crystallization degrees. Glasses were melted at 1600 deg C and heat treated at 700 deg C. Part of the glasses was crystallized using heat treatments at 770 deg C and 1150 deg C for 4h. The partial crystallization and phase transformations were responsible for different mechanical properties (bending strength, young modulus, fracture toughness and hardness) in each temperature. The mechanical response of the material is discussed in relation to the microstructure, crystalline phases, and porosity of the materials. (author)

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2010-07-15

We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

Fabrication and tritium release property of Li2TiO3-Li4SiO4 biphasic ceramics

Science.gov (United States)

Yang, Mao; Ran, Guangming; Wang, Hailiang; Dang, Chen; Huang, Zhangyi; Chen, Xiaojun; Lu, Tiecheng; Xiao, Chengjian

2018-05-01

Li2TiO3-Li4SiO4 biphasic ceramic pebbles have been developed as an advanced tritium breeder due to the potential to combine the advantages of both Li2TiO3 and Li4SiO4. Wet method was developed for the pebble fabrication and Li2TiO3-Li4SiO4 biphasic ceramic pebbles were successfully prepared by wet method using the powders synthesized by hydrothermal method. The tritium release properties of the Li2TiO3-Li4SiO4 biphasic ceramic pebbles were evaluated. The biphasic pebbles exhibited good tritium release property at low temperatures and the tritium release temperature was around 470 °C. Because of the isotope exchange reaction between H2 and tritium, the addition of 0.1%H2 to purge gas He could significantly enhance the tritium gas release and the fraction of molecular form of tritium increased from 28% to 55%. The results indicate that the Li2TiO3-Li4SiO4 biphasic ceramic pebbles fabricated by wet method exhibit good tritium release property and hold promising potential as advanced breeder pebbles.

Band alignment of atomic layer deposited SiO2 and HfSiO4 with (\\bar{2}01) β-Ga2O3

Science.gov (United States)

Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito

2017-07-01

The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.

Liquidus Temperature of SrO-Al2O3-SiO2 Glass-Forming Compositions

DEFF Research Database (Denmark)

Abel, Brett M.; Morgan, James M.; Mauro, John C.

2013-01-01

. In the composition range of interest for industrial glasses, Tliq tends to decrease with increasing strontium-to-alumina ratio. We find that cristobalite, mullite, and slawsonite are the dominant devitrification phases for the compositions with high SiO2, SiO2+Al2O3, and SrO contents, respectively. By comparison...... with the phase diagrams for CaO-Al2O3-SiO2 and MgO-Al2O3-SiO2 systems, we have found that for the highest [RO]/[Al2O3] ratios, Tliq exhibits a minimum value for R = Ca. Based on the phase diagram established here, the composition of glass materials, for example, for liquid crystal display substrates, belonging...... to the SrO-Al2O3-SiO2 family may be designed with a more exact control of the glass-forming ability by avoiding the regions of high liquidus temperature....

Thermal expansion of lanthanum silicate oxyapatite (La9.33+2x(SiO4)6O2+3x), lanthanum oxyorthosilicate (La2SiO5) and lanthanum sorosilicate (La2Si2O7)

International Nuclear Information System (INIS)

Fukuda, Koichiro; Asaka, Toru; Uchida, Tomohiro

2012-01-01

Four types of powder specimens of La 9.33 (SiO 4 ) 6 O 2 (space group P6 3 /m and Z=1), La 9.33+2x (SiO 4 ) 6 O 2+3x with 0.06≤x≤0.13 (P6 3 /m and Z=1), La 2 SiO 5 (P2 1 /c and Z=4) and La 2 Si 2 O 7 (P2 1 /c and Z=4) were examined by high-temperature X-ray powder diffractometry to determine the changes in unit-cell dimensions up to 1473 K. The anisotropy of thermal expansion was demonstrated for the former two crystals to clarify the thermal behaviors of the highly c-axis-oriented polycrystals. With La 9.33 (SiO 4 ) 6 O 2 , the linear expansion coefficient of the a-axis (α a ) was 4.8×10 −6 K −1 and that of the c-axis (α c ) was 1.8×10 −6 K −1 in the temperature range from 298 to 1473 K. The α a - and α c -values of La 9.33+2x (SiO 4 ) 6 O 2+3x (0.06≤x≤0.13) were, respectively, 5.9×10 −6 K −1 and 2.3×10 −6 K −1 . The coefficients of mean linear thermal expansion were 4.9×10 −6 K −1 for La 2 SiO 5 and 6.0×10 −6 K −1 for La 2 Si 2 O 7 , which describe the thermal expansion behaviors of the randomly grain-oriented polycrystalline materials. - Graphical abstarct: Temperature dependence of the coefficients of thermal expansion (CTE). The linear CTE along the a-axes for La 9.33 (SiO 4 ) 6 O 2 and La 9.33+2x (SiO 4 ) 6 O 2+3x with 0.06≤x≤0.13. The mean linear CTE for La 2 SiO 5 and La 2 Si 2 O 7 . Highlights: ► We examined the thermal expansion of La 9.33+2x (SiO 4 ) 6 O 2+3x (x=0 and 0.06≤x≤0.13), La 2 SiO 5 and La 2 Si 2 O 7 ► Unit-cell dimensions were determined up to 1473 K by high-temperature X-ray diffraction ► Anisotropic expansion was clarified for La 9.33+2x (SiO 4 ) 6 O 2+3x (x=0 and 0.06≤x≤0.13) ► Mean linear thermal expansion was determined for La 2 SiO 5 and La 2 Si 2 O 7.

Temperature stability of c-axis oriented LiNbO3/SiO2/Si thin film layered structures

International Nuclear Information System (INIS)

Tomar, Monika; Gupta, Vinay; Mansingh, Abhai; Sreenivas, K.

2001-01-01

Theoretical calculations have been performed for the temperature stability of the c-axis oriented LiNbO 3 thin film layered structures on passivated silicon (SiO 2 /Si) substrate with and without a non-piezoelectric SiO 2 overlayer. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. The thicknesses of various layers have been determined for optimum SAW performance with zero TCD. The presence of a non-piezoelectric SiO 2 overlayer on LiNbO 3 film is found to significantly enhance the coupling coefficient. The optimized results reveal that a high coupling coefficient of K 2 =3.45% and a zero TCD can be obtained in the SiO 2 /LiNbO 3 /SiO 2 /Si structure with a 0.235λ thick LiNbO 3 layer sandwiched between 0.1λ thick SiO 2 layers. (author)

Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO{sub 2}/SiO{sub 2}:Ag thin films

Energy Technology Data Exchange (ETDEWEB)

Güner, S., E-mail: sguner@fatih.edu.tr [Department of Physics, Fatih University, 34500 Büyükçekmece, İstanbul (Turkey); Budak, S. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL 35810 (United States); Gibson, B. [Department of Physics, UAH, Huntsville, AL 35899 (United States); Ila, D. [Department of Chemistry and Physics, Fayetteville St. University, Fayetteville, NC 28301 (United States)

2014-08-15

Highlights: • Fabrication of films through the Reactive Electron Beam deposition technique. • Perfect and reproducible Ag nanoclustered host matrix. • Potential technological applicability in thermoelectric devices. - Abstract: We have deposited five periodic SiO{sub 2}/SiO{sub 2} + Ag multi-nano-layered films on fused silica substrates using physical vapor deposition technique. The co-deposited SiO{sub 2}:Ag layers were 2.7–5 nm and SiO{sub 2} buffer layers were 1–15 nm thick. Total thickness was between 30 and 105 nm. Different concentrations of Ag, ranging from 1.5 to 50 molecular% with respect to SiO{sub 2} were deposited to determine relevant rates of nanocluster formation and occurrence of interaction between nanoclusters. Using interferometry as well as in situ thickness monitoring, we measured the thickness of the layers. The concentration of Ag in SiO{sub 2} was measured with Rutherford Backscattering Spectrometry (RBS). To nucleate Ag nanoclusters, 5 MeV cross plane Si ion bombardments were performed with fluence varying between 5 × 10{sup 14} and 1 × 10{sup 16} ions/cm{sup 2} values. Optical absorption spectra were recorded in the range of 200–900 nm in order to monitor the Ag nanocluster formation in the thin films. Thermal annealing treatment at different temperatures was applied as second method to form varying size of nanoclusters. The physical properties of formed super lattice were criticized for thermoelectric applications.

O conhecimento de si como possibilidade para a transformação de si e do coletivo

Directory of Open Access Journals (Sweden)

Rosemary Silva da Silveira

1999-12-01

Full Text Available Para promover a discussão e reflexão em grupo sobre o significado do trabalho da enfermagem numa unidade cirúrgica e diante da constatação da necessidade dos trabalhadores de enfermagem conhecerem-se mais a si e entre si, como participantes e construtores de um trabalho coletivo, implementou-se uma prática, entendida como uma tecnologia do eu, que favorecesse o conhecimento de si e do outro na tentativa de transformar a si e, conseqüentemente, o coletivo. A partir da exposição verbal e individual, ao grupo, da percepção de si, propôs-se o registro escrito de qualidades e conselhos que poderiam ser atribuídos a cada membro da equipe de enfermagem. Sistematizadas as contribuições, cada participante recebeu, individualmente, o conjunto de percepções do grupo sobre si. Tais estratégias constituíram-se em espaços mobilizadores para o diálogo, a reflexão crítica e uma maior aproximação entre os trabalhadores, representando uma possibilidade de cuidado de si e de aperfeiçoamento pessoal e grupal.

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Energy Technology Data Exchange (ETDEWEB)

Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

2015-01-01

Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

Compósitos SiCf /SiC utilizados em sistemas de proteção térmica SiCf /SiC composites for thermal protection systems

Directory of Open Access Journals (Sweden)

M. Florian

2005-09-01

Full Text Available Compósitos de carbeto de silício (SiC reforçado com fibras de carbeto de silício (SiCf são materiais candidatos em potencial para utilização em sistemas de proteção térmica em altas temperaturas devido principalmente à boa condutividade térmica na direção da fibra e muito baixa condutividade térmica na direção transversal à fibra, alta dureza, estabilidade térmica e à corrosão por oxidação. O compósito SiCf/SiC possui uma matriz de SiC reforçada com fibras contínuas policristalinas de SiC e é obtido por reações de conversão em altas temperaturas e atmosfera controlada, utilizando o compósito carbono/carbono como precursor. O processo de Reação Química em Vapor (CVR foi utilizado para a fabricação de compósitos SiCf/SiC com alta pureza na fase de SiC-beta. O compósito precursor de carbono/carbono foi fabricado com fibra de carbono não estabilizada e matriz carbonosa derivada da resina fenólica na forma de carbono isotrópico. O compósito convertido exibiu uma densidade de 1,75 g/cm³, com 40% de porosidade aberta e resistência à flexão de 80 MPa medida por ensaio flexão em 4 pontos. A área especifica medida pela técnica de BET é dependente da temperatura de conversão e das condições inicias do precursor de carbono, podendo chegar a 18 m²/g.Composites based on silicon carbide are potential candidate materials for thermal protection systems mainly due to its good thermal conductivity in fiber direction and very low transversal thermal conductivity, high hardness, corrosion and thermal resistance. SiCf/SiC composite presents a SiC matrix reinforced with SiC polycrystalline continuous fibers. The composite was obtained by conversion reactions at high temperature and controlled atmosphere from a carbon/carbon composite precursor. The CVR process was used to fabricate SiC /SiC composite with crystalline high-purity beta-SiC from a carbon-carbon precursor fabricated with non-stabilized carbon fiber and

Crystallization kinetics of BaO-Al2O3-SiO2 glasses

Science.gov (United States)

Bansal, Narottam P.; Hyatt, Mark J.

1989-01-01

Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

Phase relations in the SiC-Al2O3-Pr2O3 system

International Nuclear Information System (INIS)

Pan, W.; Wu, L.; Jiang, Y.; Huang, Z.

2016-01-01

Phase relations in the Si-Al-Pr-O-C system, including the SiC-Al 2 O 3 -Pr 2 O 3 , the Al 2 O 3 -Pr 2 O 3 -SiO 2 and the SiC-Al 2 O 3 -Pr 2 O 3 -SiO 2 subsystems, were determined by means of XRD phase analysis of solid-state-reacted samples fabricated by using SiC, Al 2 O 3 , Pr 2 O 3 and SiO 2 powders as the starting materials. Subsolidus phase diagrams of the systems were presented. Two Pr-aluminates, namely PrAlO 3 (PrAP) and PrAl 11 O 18 (β(Pr) β-Al 2 O 3 type) were formed in the SiC-Al 2 O 3 -Pr 2 O 3 system. SiC was compatible with both of them. Pr-silicates of Pr 2 SiO 5 , Pr 2 Si 2 O 7 and Pr 9.33 Si 6 O 26 (H(Pr) apatite type) were formed owing to presence of SiO 2 impurity in the SiC powder. The presence of the SiO 2 extended the ternary system of SiC-Al 2 O 3 -Pr 2 O 3 into a quaternary system of SiC-Al 2 O 3 -SiO 2 -Pr 2 O 3 (Si-Al-Pr-O-C). SiC was compatible with Al 2 O 3 , Pr 2 O 3 and the Pr-silicates. The effect of SiO 2 on the phase relations and liquid phase sintering of SiC ceramics was discussed.

Fatigue strength of Al2O3 and Si3N4 ceramics

International Nuclear Information System (INIS)

Sonsino, C.M.

1992-01-01

Various Al 2 O 3 ceramics and random samples of two Si 3 N 4 ceramics were examined, with all specimens differing in terms of material and manufacturing parameters. Of the Al 2 O 3 ceramics, randomly selected specimens were tested for their banding strength at room temperature, and three specifically selected specimens were tested for their compressive strength at room temperature, at 800 C and at 1200 C. A number of specimen variants were examined by cyclic fatigue tests at room temperature and 800 C, and at 1200 C in one case, the specimens used being slightly notched specimens (α n = 1,02 and 1,08), or more heavily notched speciments (α n = 1.77, 1.90 and 2.24), with bending loads being either cyclic or growing. The Si 3 N 4 specimens were randomly chosen for bending tests and cyclic fatigue tests, at room temperature. (orig./MM) [de

Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

Energy Technology Data Exchange (ETDEWEB)

Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

2011-12-15

The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

Modeling of amorphous SiCxO6/5 by classical molecular dynamics and first principles calculations

Science.gov (United States)

Liao, Ningbo; Zhang, Miao; Zhou, Hongming; Xue, Wei

2017-02-01

Polymer-derived silicon oxycarbide (SiCO) presents excellent performance for high temperature and lithium-ion battery applications. Current experiments have provided some information on nano-structure of SiCO, while it is very challenging for experiments to take further insight into the molecular structure and its relationship with properties of materials. In this work, molecular dynamics (MD) based on empirical potential and first principle calculation were combined to investigate amorphous SiCxO6/5 ceramics. The amorphous structures of SiCO containing silicon-centered mix bond tetrahedrons and free carbon were successfully reproduced. The calculated radial distribution, angular distribution and Young’s modulus were validated by current experimental data, and more details on molecular structure were discussed. The change in the slope of Young’s modulus is related to the glass transition temperature of the material. The proposed modeling approach can be used to predict the properties of SiCO with different compositions.

Effect of oxide charge trapping on x-ray photoelectron spectroscopy of HfO2/SiO2/Si structures

International Nuclear Information System (INIS)

Abe, Yasuhiro; Miyata, Noriyuki; Suzuki, Haruhiko; Kitamura, Koji; Igarashi, Satoru; Nohira, Hiroshi; Ikenaga, Eiji

2009-01-01

We examined the effects of interfacial SiO 2 layers and a surface metal layer on the photoelectron spectra of HfO 2 /SiO 2 /Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO 2 layer, even though photoelectrons may have been emitted from the HfO 2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO 2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal- and nonmetal-deposited HfO 2 /SiO 2 /Si structures; HfO 2 and SiO 2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO 2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO 2 /SiO 2 /Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO 2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO 2 surface and negative charges are trapped inside the HfO 2 layer. (author)

Synthesis and Luminescence Properties of Yellow-emitting SiO2/Zn2SiO4: Mn Nanocomposite

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Karim OMRI

2014-05-01

Full Text Available Yellow light emitting Mn2+-doped b-Zn2SiO4 phosphor nanoparticles embedded in SiO2 host matrix, were prepared by a simple solid-phase reaction under natural atmosphere at 1500 °C for 2 hours after the incorporation of manganese doped zinc oxide nanoparticles in silica using sol-gel method. The SiO2/Zn2SiO4:Mn nanocomposite was characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, scanning electron microscopy (SEM and photoluminescence (PL. The nanopowder was crystallized in triclinic b-Zn2SiO4 phase with a particles size varies between 70 nm and 84 nm. The SiO2/b-Zn2SiO4:Mn nanocomposite exhibited a broad yellow emission band at 575 nm under UV excitation light. The dependence of the intensity and energy position of the obtained PL band on measurement temperature and power excitation will be discussed.

The phenomenon of phase separated in Na2O-B2O3-SiO2, Na2O-SiO2-P2O5 glasses

International Nuclear Information System (INIS)

Procyk, B.; Bieniarz, P.; Plichta, E.; Pudelek, B.; Kucinski, G.; Staniewicz-Brudnik, B.

1997-01-01

During the thermal treatment, the phenomenon of phase separation has been observed in the some glasses. The glass has became opaque, due to the opalescence of phase separated. Investigations of the phenomenon of phase separation were conducted using the basic systems: Na 2 O-B 2 O 3 -SiO 2 , Na 2 O-SiO 2 -P 2 O 5 and theirs modifications. The occurrence of binodal and spinodal phase decomposition was observed by TEM. The phase separation inhomogeneities have drop-like character and with higher concentration shows a tendency for coalescence. The influence of the chemical composition, temperature and time on the phenomenon of phase separation in the investigated glasses has been defined. (author)

Crystallization kinetics of bioactive glasses in the ZnO-Na2O-CaO-SiO2 system.

Science.gov (United States)

Malavasi, Gianluca; Lusvardi, Gigliola; Pedone, Alfonso; Menziani, Maria Cristina; Dappiaggi, Monica; Gualtieri, Alessandro; Menabue, Ledi

2007-08-30

The crystallization kinetics of Na(2)O.CaO.2SiO(2) (x = 0) and 0.68ZnO.Na(2)O.CaO.2SiO(2) (x = 0.68, where x is the ZnO stoichiometric coefficient in the glass formula) bioactive glasses have been studied using both nonisothermal and isothermal methods. The results obtained from isothermal XRPD analyses have showed that the first glass crystallizes into the isochemical Na(2)CaSi(2)O(6) phase, whereas the Na(2)ZnSiO(4) crystalline phase is obtained from the Zn-rich glass, in addition to Na(2)CaSi(2)O(6). The activation energy (Ea) for the crystallization of the Na(2)O.CaO.2SiO(2) glass is 193 +/- 10 and 203 +/- 5 kJ/mol from the isothermal in situ XRPD and nonisothermal DSC experiments, respectively. The Avrami exponent n determined from the isothermal method is 1 at low temperature (530 degrees C), and its value increases linearly with temperature increase up to 2 at 607 degrees C. For the crystallization of Na(2)CaSi(2)O(6) from the Zn-containing glass, higher values of both the crystallization temperature (667 and 661 degrees C) and Ea (223 +/- 10 and 211 +/- 5 kJ/mol) have been found from the isothermal and nonisothermal methods, respectively. The Na(2)ZnSiO(4) crystalline phase crystallizes at lower temperature with respect to Na(2)CaSi(2)O(6), and the Ea value is 266 +/- 20 and 245 +/- 15 kJ/mol from the isothermal and nonisothermal methods, respectively. The results of this work show that the addition of Zn favors the crystallization from the glass at lower temperature with respect to the Zn-free glass. In fact, it causes an increase of Ea for the Na diffusion process, determined using MD simulations, and consequently an overall increase of Ea for the crystallization process of Na(2)CaSi(2)O(6). Our results show good agreement between the Ea and n values obtained with the two different methods and confirm the reliability of the nonisothermal method applied to kinetic crystallization of glassy systems. This study allows the determination of the temperature

Bending Strength of EN AC-44200 – Al2O3 Composites at Elevated Temperatures

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Kurzawa A.

2017-03-01

Full Text Available The paper presents results of bend tests at elevated temperatures of aluminium alloy EN AC-44200 (AlSi12 based composite materials reinforced with aluminium oxide particles. The examined materials were manufactured by squeeze casting. Preforms made of Al2O3 particles, with volumetric fraction 10, 20, 30 and 40 vol.% of particles joined with sodium silicate bridges were used as reinforcement. The preforms were characterised by open porosity ensuring proper infiltration with the EN AC-44200 (AlSi12 liquid alloy. The largest bending strength was found for the materials containing 40 vol.% of reinforcing ceramic particles, tested at ambient temperature. At increased test temperature, bending strength Rg of composites decreased in average by 30 to 50 MPa per 100°C of temperature increase. Temperature increase did not significantly affect cracking of the materials. Cracks propagated mainly along the interfaces particle/matrix, with no effect of the particles falling-out from fracture surfaces. Direction of cracking can be affected by a small number of agglomerations of particles or of non-reacted binder. In the composites, the particles strongly restrict plastic deformation of the alloy, which leads to creation of brittle fractures. At elevated temperatures, however mainly at 200 and 300°C, larger numbers of broken, fragmented particles was observed in the vicinity of cracks. Fragmentation of particles occurred mainly at tensioned side of the bended specimens, in the materials with smaller fraction of Al2O3 reinforcement, i.e. 10 and 20 vol.%.

Structural aspects of B2O3-substituted (PbO)0.5(SiO2)0.5 glasses

International Nuclear Information System (INIS)

Sudarsan, V.; Kulshreshtha, S.K.; Shrikhande, V.K.; Kothiyal, G.P.

2002-01-01

Lead borosilicate glasses having general formulae (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x with 0.0≤x≤0.4 and (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y with 0.0≤y≤0.5 have been prepared by a conventional melt-quench method and characterized by 29 Si, 11 B magic angle spinning (MAS) NMR techniques and infrared spectroscopy, as regards their structural features. From 29 Si NMR results, it has been inferred that with increasing concentration of boron oxide, (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 )x glasses exhibit a systematic increase in the number of Q 4 structural units of Si at the expense of Q 2 structural units, along with the formation of Si-O-B linkages. On the other hand, for (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y glasses, there is no direct interaction between SiO 2 and B 2 O 3 in the glass network, as revealed by the 29 Si MAS NMR studies. Boron exists in both trigonal and tetrahedral configurations for these two series of glasses and for the (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y series of glasses; the relative concentration of these two structural units remains almost constant with increasing B 2 O 3 concentration. In contrast, for (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x glasses, there is a slight increase in the number of BO 3 structural units above x = 0.2, as there is a competition between SiO 2 and B 2 O 3 for interaction with Pb 2+ , thereby leading to the formation of BO 3 structural units. For both series of glasses, the thermal expansion coefficient is found to decrease with increasing B 2 O 3 concentration, the effect being more pronounced for the (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x series of glasses due to the increased concentration of Q 4 structural units of silicon and better cross-linking as a result of the formation of Si-O-B-type linkages. (author)

InAs nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications

International Nuclear Information System (INIS)

Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles

2007-01-01

We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals

Non-switching to switching transferring mechanism investigation for Ag/SiO x /p-Si structure with SiO x deposited by HWCVD

Science.gov (United States)

Liu, Yanhong; Wang, Ruoying; Li, Zhongyue; Wang, Song; Huang, Yang; Peng, Wei

2018-04-01

We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I–V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I–V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.

PAC study in the HfO2-SiO2 system

International Nuclear Information System (INIS)

Chain, C.Y.; Damonte, L.C.; Ferrari, S.; Munoz, E.; Torres, C. Rodriguez; Pasquevich, A.F.

2010-01-01

A high-k HfO 2 /SiO 2 gate stack is taking the place of SiO 2 as a gate dielectric in field effect transistors. This fact makes the study of the solid-state reaction between these oxides very important. Nanostructure characterization of a high-energy ball milled and post-annealed equimolar HfO 2 and amorphous SiO 2 powder mixture has been carried out by perturbed angular correlations (PAC) technique. The study was complemented with X-ray diffraction and positron annihilation lifetime spectroscopy (PALS). The experimental results revealed that the ball milling of equimolar mixtures increases the defects concentration in hafnium oxide. No solid-state reaction occurred even after 8 h of milling. The formation of HfSiO 4 (hafnon) was observed in the milled blends annealed at high temperatures.The PAC results of the milled samples are compared with those obtained for pure m-ZrO 2 subjected to high-energy ball milling and with reported microstructure data for the system ZrO 2 -SiO 2 .

Photocatalytic Removal of Phenol under Natural Sunlight over N-TiO2-SiO2 Catalyst: The Effect of Nitrogen Composition in TiO2-SiO2

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Viet-Cuong Nguyen

2009-01-01

Full Text Available In this present work, high specific surface area and strong visible light absorption nitrogen doped TiO2-SiO2 photocatalyst was synthesized by using sol-gel coupled with hydrothermal treatment method. Nitrogen was found to improve the specific surface area while it also distorted the crystal phase of the resulting N-TiO2-SiO2 catalyst. As the N/ (TiO2-SiO2 molar ratio was more than 10%, the derived catalyst presented the superior specific surface area up to 260 m2/g. Nevertheless, its photoactivity towards phenol removal was observed to significantly decrease, which could results from the too low crystallinity. The nitrogen content in N-TiO2-SiO2 catalyst was therefore necessary to be optimized in terms of phenol removal efficiency and found at ca. 5%. Under UVA light and natural sunlight irradiation of 80 min, N(5%-TiO2-SiO2 catalyst presented the phenol decomposition efficiencies of 68 and 100%, respectively. It was also interestingly found in this study that the reaction rate was successfully expressed using a Langmuir-Hinshelwood (L-H model, indicating the L-H nature of photocatalytic phenol decomposition reaction on the N-TiO2-SiO2 catalyst.

Cathodoluminescence properties of SiO2:Pr3+and ZnO.SiO2:Pr3+ phosphor nanopowders

CSIR Research Space (South Africa)

Mhlongo, GH

2010-10-01

Full Text Available regardless of the incorporation of Pr3+ and nanocrystalline ZnO or annealing at 600 °C. The particles were mostly spherical and agglomerated as confirmed by Field Emission Scanning Electron Microscopy. Thermogravimetric analysis of dried gels performed... Science, vol. 45(19): 5228-5236 Cathodoluminescence properties of SiO2:Pr 3+and ZnO·SiO2:Pr 3+ phosphor nanopowders G. H. Mhlongo, O. M. Ntwaeaborwa, M. S. Dhlamini, H. C. Swart, K. T. Hillie ABSTRACT: The successful incorporation of Zn...

Evolution of MoTeO x/SiO 2 and MoBiTeO x/SiO 2 catalysts in the partial oxidation of propane to acrolein

Science.gov (United States)

He, Yiming; Wu, Ying

2010-04-01

A thorough investigation of the catalysts Mo 1Te 1O x/SiO 2 and Mo 1Bi 0.05Te 1O x/SiO 2 in the partial oxidation of propane is presented in this paper, in order to elucidate the nature and behavior of the active surface. The catalysts' structures and redox properties were investigated by means of X-ray powder diffraction, Raman spectroscopy, in situ Raman spectroscopy, X-ray photoelectron spectroscopy, and H 2-TPR techniques. The results indicate that Te-polymolybdate is the main active phase on fresh catalysts. During reaction, the catalysts underwent a progressive reduction, resulting in the reconstruction of the active surface and the formation of a MoO 3 phase. The synergistic effect between Te-polymolybdate and MoO 3 was assumed to promote catalytic performance. The different stabilities of Mo 1Te 1O x/SiO 2 and Mo 1Bi 0.05Te 1O x/SiO 2 catalysts are also discussed.

Synthesis of Nanoscale CaO-Al2O3-SiO2-H2O and Na2O-Al2O3-SiO2-H2O Using the Hydrothermal Method and Their Characterization

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Jingbin Yang

2017-06-01

Full Text Available C-A-S-H (CaO-Al2O3-SiO2-H2O and N-A-S-H (Na2O-Al2O3-SiO2-H2O have a wide range of chemical compositions and structures and are difficult to separate from alkali-activated materials. Therefore, it is difficult to analyze their microscopic properties directly. This paper reports research on the synthesis of C-A-S-H and N-A-S-H particles with an average particle size smaller than 300 nm by applying the hydrothermal method. The composition and microstructure of the products with different CaO(Na2O/SiO2 ratios and curing conditions were characterized using XRD, the RIR method, FTIR, SEM, TEM, and laser particle size analysis. The results showed that the C-A-S-H system products with a low CaO/SiO2 ratio were mainly amorphous C-A-S-H gels. With an increase in the CaO/SiO2 ratio, an excess of Ca(OH2 was observed at room temperature, while in a high-temperature reaction system, katoite, C4AcH11, and other crystallized products were observed. The katoite content was related to the curing temperature and the content of Ca(OH2 and it tended to form at a high-temperature and high-calcium environment, and an increase in the temperature renders the C-A-S-H gels more compact. The main products of the N-A-S-H system at room temperature were amorphous N-A-S-H gels and a small amount of sodalite. An increase in the curing temperature promoted the formation of the crystalline products faujasite and zeolite-P. The crystallization products consisted of only zeolite-P in the high-temperature N-A-S-H system and its content were stable above 70%. An increase in the Na2O/SiO2 ratio resulted in more non-bridging oxygen and the TO4 was more isolated in the N-A-S-H structure. The composition and microstructure of the C-A-S-H and N-A-S-H system products synthesized by the hydrothermal method were closely related to the ratio of the raw materials and the curing conditions. The results of this study increase our understanding of the hydration products of alkali

Surface-enhanced molecularly imprinted electrochemiluminescence sensor based on Ru@SiO2 for ultrasensitive detection of fumonisin B1.

Science.gov (United States)

Zhang, Wei; Xiong, Huiwen; Chen, Miaomiao; Zhang, Xiuhua; Wang, Shengfu

2017-10-15

A novel molecularly imprinted electrochemiluminescence (MIP-ECL) sensor based on Ru(bpy) 3 2+ -doped silica nanoparticles (Ru@SiO 2 NPs) is developed for highly sensitive detection of fumonisin B 1 (FB 1 ). Gold-nanoparticles (AuNPs), Ru@SiO 2 NPs with chitosan (CS) composites and a molecularly imprinted polymer (MIP) are assembled on a glassy carbon electrode (GCE) to fabricate an ECL platform step by step. AuNPs could greatly promote the ECL intensity and improve the analytical sensitivity according to the localized surface plasmon resonance (LSPR) and the electrochemical effect. In this surface-enhanced electrochemiluminescence (SEECL) system, AuNPs work as the LSPR source to improve the ECL intensity and Ru@SiO 2 NPs are used as ECL luminophores. In the phosphate buffer solution (PBS), the evident anodic ECL of Ru@SiO 2 on the above working electrode is observed in the presence of the template molecule fumonisin B 1 (FB 1 ), which could act as the coreactant of Ru@SiO 2 NPs due to the amino group of FB 1 . When the template molecules were eluted from the MIP, little coreactant was left, resulting in an apparent decrease of ECL signal. After the MIP-ECL sensor was incubated in FB 1 solution, the template molecules rebound to the MIP surface, leading to the enhancement of ECL signal again. On the basis of these results, a facile MIP-ECL sensor has been successfully fabricated, which exhibited a linear range from 0.001 to 100ngmL -1 with a detection limit of 0.35pgmL -1 for FB 1 . Moreover, the proposed MIP-ECL sensor displayed an excellent application in real samples. Copyright © 2017 Elsevier B.V. All rights reserved.

XPS and EELS characterization of Mn{sub 2}SiO{sub 4}, MnSiO{sub 3} and MnAl{sub 2}O{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Grosvenor, A.P., E-mail: andrew.grosvenor@usask.ca [Department of Chemistry, University of Saskatchewan, Saskatoon, SK S7N 5C9 (Canada); Bellhouse, E.M., E-mail: erika.bellhouse@arcelormittal.com [Global R & D—Hamilton, ArcelorMittal Dofasco, 1330 Burlington St. E, Hamilton, ON L8N 3J5 (Canada); Korinek, A., E-mail: korinek@mcmaster.ca [Canadian Centre for Electron Microscopy, Brockhouse Institute for Materials Research, McMaster University, 1280 Main St. W., Hamilton, ON L8S 4M1 (Canada); Bugnet, M., E-mail: bugnetm@mcmaster.ca [Canadian Centre for Electron Microscopy, Brockhouse Institute for Materials Research, McMaster University, 1280 Main St. W., Hamilton, ON L8S 4M1 (Canada); McDermid, J.R., E-mail: mcdermid@mcmaster.ca [Steel Research Centre, McMaster University, 1280 Main St. W., Hamilton, ON L8S 4M1 (Canada)

2016-08-30

Graphical abstract: XPS and EELS spectra were acquired from Mn2Al2O4, MnSiO3 and Mn2SiO4 standards and unique features identified that will allow unambiguous identification of these compounds when studying the selective oxidation of advanced steels. - Highlights: • Mn2Al2O4, MnSiO3 and Mn2SiO4 standards were synthesized and characterized using both XPS and EELS. • Unique features in both the XPS high resolution and EELS spectra were identified for all compounds. • The spectra can be used to identify these compounds when studying the selective oxidation of steels. - Abstract: X-ray Photoelectron Spectroscopy (XPS) and Electron Energy Loss Spectroscopy (EELS) are strong candidate techniques for characterizing steel surfaces and substrate-coating interfaces when investigating the selective oxidation and reactive wetting of advanced high strength steels (AHSS) during the continuous galvanizing process. However, unambiguous identification of ternary oxides such as Mn{sub 2}SiO{sub 4}, MnSiO{sub 3}, and MnAl{sub 2}O{sub 4} by XPS or EELS, which can play a significant role in substrate reactive wetting, is difficult due to the lack of fully characterized standards in the literature. To resolve this issue, samples of Mn{sub 2}SiO{sub 4}, MnSiO{sub 3} and MnAl{sub 2}O{sub 4} were synthesized and characterized by XPS and EELS. The unique features of the XPS and EELS spectra for the Mn{sub 2}SiO{sub 4}, MnSiO{sub 3} and MnAl{sub 2}O{sub 4} standards were successfully derived, thereby allowing investigators to fully differentiate and identify these oxides at the surface and subsurface of Mn, Si and Al alloyed AHSS using these techniques.

Regulating effect of SiO2 interlayer on optical properties of ZnO thin films

International Nuclear Information System (INIS)

Xu, Linhua; Zheng, Gaige; Miao, Juhong; Su, Jing; Zhang, Chengyi; Shen, Hua; Zhao, Lilong

2013-01-01

ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. Regulating effect of SiO 2 interlayer with various thicknesses on the optical properties of ZnO/SiO 2 thin films was investigated deeply. The analyses of X-ray diffraction show that the ZnO layers in ZnO/SiO 2 nanocomposite films have a wurtzite structure and are preferentially oriented along the c-axis while the SiO 2 layers are amorphous. The scanning electron microscope images display that the ZnO layers are composed of columnar grains and the thicknesses of ZnO and SiO 2 layers are all very uniform. The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films, which is reflected in the following two aspects: (1) the transmittance of ZnO/SiO 2 nanocomposite films is increased; (2) the photoluminescence (PL) of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays. -- Highlights: ► ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. ► The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films. ► The photoluminescence of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. ► The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays

Influence of heat treatments upon the mechanical properties and in vitro bioactivity of ZrO2-toughened MgO-CaO-SiO2-P2O5-CaF2 glass-ceramics.

Science.gov (United States)

Li, Huan-Cai; Wang, Dian-Gang; Meng, Xiang-Guo; Chen, Chuan-Zhong

2014-09-01

Zirconia-toughened MgO-CaO-SiO2-P2O5-CaF2 glass-ceramics are prepared using sintering techniques, and a series of heat treatment procedures are designed to obtain a glass-ceramic with improved properties. The crystallization behavior, phase composition, and morphology of the glass-ceramics are characterized. The bending strength, elastic modulus, fracture toughness, and microhardness of the glass-ceramics are investigated, and the effect mechanism of heat treatments upon the mechanical properties is discussed. The bioactivity of glass-ceramics is then evaluated using the in vitro simulated body fluid (SBF) soaking test, and the mechanism whereby apatite forms on the glass-ceramic surfaces in the SBF solution is discussed. The results indicate that the main crystal phase of the G-24 sample undergoing two heat treatment procedures is Ca5(PO4)3F (fluorapatite), and those of the G-2444 sample undergoing four heat treatment procedures are Ca5(PO4)3F and β-CaSiO3 (β-wollastonite). The heat treatment procedures are found to greatly influence the mechanical properties of the glass-ceramic, and an apatite layer is induced on the glass-ceramic surface after soaking in the SBF solution.

Effect of SiO 2-ZrO 2 supports prepared by a grafting method on hydrogen production by steam reforming of liquefied natural gas over Ni/SiO 2-ZrO 2 catalysts

Science.gov (United States)

Seo, Jeong Gil; Youn, Min Hye; Song, In Kyu

SiO 2-ZrO 2 supports with various zirconium contents are prepared by grafting a zirconium precursor onto the surface of commercial Carbosil silica. Ni(20 wt.%)/SiO 2-ZrO 2 catalysts are then prepared by an impregnation method, and are applied to hydrogen production by steam reforming of liquefied natural gas (LNG). The effect of SiO 2-ZrO 2 supports on the performance of the Ni(20 wt.%)/SiO 2-ZrO 2 catalysts is investigated. SiO 2-ZrO 2 prepared by a grafting method serves as an efficient support for the nickel catalyst in the steam reforming of LNG. Zirconia enhances the resistance of silica to steam significantly and increases the interaction between nickel and the support, and furthermore, prevents the growth of nickel oxide species during the calcination process through the formation of a ZrO 2-SiO 2 composite structure. The crystalline structures and catalytic activities of the Ni(20 wt.%)/SiO 2-ZrO 2 catalysts are strongly influenced by the amount of zirconium grafted. The conversion of LNG and the yield of hydrogen show volcano-shaped curves with respect to zirconium content. Among the catalysts tested, the Ni(20 wt.%)/SiO 2-ZrO 2 (Zr/Si = 0.54) sample shows the best catalytic performance in terms of both LNG conversion and hydrogen yield. The well-developed and pure tetragonal phase of ZrO 2-SiO 2 (Zr/Si = 0.54) appears to play an important role in the adsorption of steam and subsequent spillover of steam from the support to the active nickel. The small particle size of the metallic nickel in the Ni(20 wt.%)/SiO 2-ZrO 2 (Zr/Si = 0.54) catalyst is also responsible for its high performance.

Temperature stability of c-axis oriented LiNbO{sub 3}/SiO{sub 2}/Si thin film layered structures

Energy Technology Data Exchange (ETDEWEB)

Tomar, Monika [Department of Physics and Astrophysics, University of Delhi, Delhi (India)]. E-mail: mtomar@physics.du.ac.in; monikatomar@rediffmail.com; Gupta, Vinay; Mansingh, Abhai; Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi (India)

2001-08-07

Theoretical calculations have been performed for the temperature stability of the c-axis oriented LiNbO{sub 3} thin film layered structures on passivated silicon (SiO{sub 2}/Si) substrate with and without a non-piezoelectric SiO{sub 2} overlayer. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. The thicknesses of various layers have been determined for optimum SAW performance with zero TCD. The presence of a non-piezoelectric SiO{sub 2} overlayer on LiNbO{sub 3} film is found to significantly enhance the coupling coefficient. The optimized results reveal that a high coupling coefficient of K{sup 2}=3.45% and a zero TCD can be obtained in the SiO{sub 2}/LiNbO{sub 3}/SiO{sub 2}/Si structure with a 0.235{lambda} thick LiNbO{sub 3} layer sandwiched between 0.1{lambda} thick SiO{sub 2} layers. (author)

Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

1997-01-01

Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

Initial oxidation processes of Si(001) surfaces by supersonic O2 molecular beams. Different oxidation mechanisms for clean and partially-oxidized surfaces

International Nuclear Information System (INIS)

Teraoka, Yuden; Yoshigoe, Akitaka

2002-01-01

Potential energy barriers for dissociative chemisorption of O 2 molecules on Si(001) clean surfaces were investigated using supersonic O 2 molecular beams and photoemission spectroscopy. Relative initial sticking probabilities of O 2 molecules and the saturated oxygen amount on the Si(001) surface were measured as a function of incident energy of O 2 molecules. Although the probability was independent on the incident energy in the region larger than 1 eV, the saturated oxygen amount was dependent on the incident energy without energy thresholds. An Si-2p photoemission spectrum of the Si(001) surface oxidized by thermal O 2 gas revealed the oxygen insertion into dimer backbond sites. These facts indicate that a reaction path of the oxygen insertion into dimer backbonds through bridge sites is open for the clean surface oxidation, and the direct chemisorption probability at the backbonds is negligibly small comparing with that at the bridge sites. (author)

Preparation of CaO-SiO2-CuO bioactive glasses-embedded anodic alumina with improved biological activities

Directory of Open Access Journals (Sweden)

Ni Siyu

2017-10-01

Full Text Available To improve bone cell cytocompatibility properties of porous anodic alumina (PAA and implement anti-bacterial properties, amorphous CaO-SiO2-CuO materials were loaded into PAA nano-pores (termed CaO-SiO2- CuO/PAA by a facile ultrasonic-assisted sol-dipping strategy. The surface features and chemistry of the obtained CaO-SiO2-CuO/PAA were investigated by a field emission scanning microscope (FESEM, an energy-dispersive Xray spectrometer (EDS and an X-ray photoelectron spectroscopy (XPS. The ability of the CaO-SiO2-CuO/PAA specimens to form apatite via a bio-mineralization processwas evaluated by soaking them in simulated body fluid (SBF in vitro. The surface microstructure and chemical properties after soaking in SBFwere characterized. The release of ions into the SBF was also measured. In addition, rat osteoblasts and two types of bacterial were cultured on the samples to determine their cytocompatibility and antibacterial properties. The results showed that the amorphous CaO-SiO2-CuO materials were successfully decorated into PAA nano-pores and at the same time maintained their nano-featured surfaces. The CaO-SiO2-CuO/PAA samples induced apatite-mineralization in SBF. Meanwhile, the CaO-SiO2-CuO/PAA samples demonstrated great potential for promoting the proliferation of osteoblasts and inhibiting Escherichia coli (E. coli as well as Staphylococcus. aureus (S. aureus growth. Specifically, there was an 86.5±4.1% reduction in E. coli, an 88.0 ± 2.2% reduction in S. aureus for the CaO-SiO2-CuO/PAA surfaces compared to PAA controls. The capability to promote osteoblast proliferation and better antibacterial activity of CaO-SiO2- CuO/PAA may be attributed to the fact that Cu ions can be slowly and constantly released from the samples. Importantly, this was achieved without the use of antibiotics or any pharmaceutical agent. Ultimately, these results suggest that the CaO-SiO2-CuO/PAA substrates possessed improved bone cell cytocompatibility and high

Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

DEFF Research Database (Denmark)

Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

1986-01-01

X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

An intense ultraviolet photoluminescence in sol-gel ZnO-SiO sub 2 nanocomposites

CERN Document Server

Fu Zheng Ping; Li Li; Dong Wei Wei; Jia Chong; Wu Wan

2003-01-01

We report the phenomenon that the intensity of the ultraviolet (UV) photoluminescence (PL) from ZnO was greatly enhanced by incorporating ZnO into the SiO sub 2 matrix. PL excitation results show that both the ZnO nanoparticles and the SiO sub 2 matrix in the nanocomposites contribute to the luminescence process for the UV band. On the basis of the x-ray photoelectron spectra, we suggest that interface energy states are formed due to the presence of Zn-O-Si bonds between ZnO nanoparticles and the SiO sub 2 matrix. A tentative model concerning the contribution of the ZnO nanoparticles, SiO sub 2 matrix, and ZnO-SiO sub 2 interface is suggested to explain the PL enhancement effect.

Magnetotransport properties of c-axis oriented La0.7Sr0.3MnO3 thin films on MgO-buffered SiO2/Si substrates

International Nuclear Information System (INIS)

Kang, Young-Min; Ulyanov, Alexander N.; Shin, Geo-Myung; Lee, Sung-Yun; Yoo, Dae-Gil; Yoo, Sang-Im

2009-01-01

c-axis oriented La 0.7 Sr 0.3 MnO 3 (LSMO) films on MgO-buffered SiO 2 /Si substrates were prepared, and their texture, microstructure, and magnetotransport properties were studied and compared to epitaxial LSMO/MgO (001) and polycrystalline LSMO/SiO 2 /Si films. c-axis oriented MgO buffer layers were obtained on amorphous SiO 2 layer through rf sputter deposition at low substrate temperature and consequent postannealing processes. In situ pulsed laser deposition-grown LSMO films, deposited on the MgO layer, show strong c-axis texture, but no in-plane texture. The c-axis oriented LSMO films which are magnetically softer than LSMO/SiO 2 /Si films exhibit relatively large low field magnetoresistance (LFMR) and sharper MR drop at lower field. The large LFMR is attributed to a spin-dependent scattering of transport current at the grain boundaries

SiO2@TiO2 Coating: Synthesis, Physical Characterization and Photocatalytic Evaluation

Directory of Open Access Journals (Sweden)

A. Rosales

2018-03-01

Full Text Available Use of silicon dioxide (SiO2 and titanium dioxide (TiO2 have been widely investigated individually in coatings technology, but their combined properties promote compatibility for different innovative applications. For example, the photocatalytic properties of TiO2 coatings, when exposed to UV light, have interesting environmental applications, such as air purification, self-cleaning and antibacterial properties. However, as reported in different pilot projects, serious durability problems, associated with the adhesion between the substrate and TiO2, have been evidenced. Thus, the aim of this work is to synthesize SiO2 together with TiO2 to increase the durability of the photocatalytic coating without affecting its photocatalytic potential. Therefore, synthesis using sonochemistry, synthesis without sonochemistry, physical characterization, photocatalytic evaluation, and durability of the SiO2, SiO2@TiO2 and TiO2 coatings are presented. Results indicate that using SiO2 improved the durability of the TiO2 coating without affecting its photocatalytic properties. Thus, this novel SiO2@TiO2 coating shows potential for developing long-lasting, self-cleaning and air-purifying construction materials.

Raman and infrared investigations of glass and glass-ceramics with composition 2Na2O·1CaO·3SiO2

OpenAIRE

Ziemath, Ervino C.; Aegerter, Michel A.

1994-01-01

Precursor glass and glass-ceramics with molar composition 2Na2O·1CaO·3SiO2 are studied by infrared, conventional, and microprobe Raman techniques. The Gaussian deconvoluted Raman spectrum of the glass presents bands at 625 and 660 cm-1, attributed to bending vibrations of Si-O-Si bonds, and at 860, 920, 975 and 1030 cm-1, attributed to symmetric stretching vibrations of SiO4 tetrahedra with 4, 3, 2, and 1 nonbridging oxygens, respectively. The Raman microprobe spectrum of a highly crystalliz...

A Novel MgO-CaO-SiO2 System for Fabricating Bone Scaffolds with Improved Overall Performance

Directory of Open Access Journals (Sweden)

Hang Sun

2016-04-01

Full Text Available Although forsterite (Mg2SiO4 possesses good biocompatibility and suitable mechanical properties, the insufficient bioactivity and degradability hinders its further application. In this study, a novel MgO-CaO-SiO2 system was developed by adding wollastonite (CaSiO3 into Mg2SiO4 to fabricate bone scaffolds via selective laser sintering (SLS. The apatite-forming ability and degradability of the scaffolds were enhanced because the degradation of CaSiO3 could form silanol groups, which could offer nucleation sites for apatite. Meanwhile, the mechanical properties of the scaffolds grew with increasing CaSiO3 to 20 wt %. It was explained that the liquid phase of CaSiO3 promoted the densification during sintering due to its low melting point. With the further increase in CaSiO3, the mechanical properties decreased due to the formation of the continuous filling phase. Furthermore, the scaffolds possessed a well-interconnected porous structure and exhibited an ability to support cell adhesion and proliferation.

Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

Science.gov (United States)

Kakushima, K.; Okamoto, K.; Tachi, K.; Song, J.; Sato, S.; Kawanago, T.; Tsutsui, K.; Sugii, N.; Ahmet, P.; Hattori, T.; Iwai, H.

2008-11-01

Band bendings of Si substrates have been observed using hard x-ray photoemission spectroscopy. With a capability of collecting photoelectrons generated as deep as 40 nm, the binding energy shift in a core level caused by the potential profile at the surface of the substrate results in a spectrum broadening. The broadening is found to be significant when heavily doped substrates are used owing to its steep potential profile. The surface potential of the substrate can be obtained by deconvolution of the spectrum. This method has been applied to observe the band bending profile of metal-oxide-semiconductor capacitors with high-k gate dielectrics. By comparing the band bending profiles of heavily-doped n+- and p+-Si substrates, the interface dipoles presented at interfaces can be estimated. In the case of W gated La2O3/La-silicate capacitor, an interface dipole to shift the potential of -0.45 V has been estimated at La-silicate/Si interface, which effectively reduces the apparent work function of W. On the other hand, an interface dipole of 0.03-0.07 V has been found to exist at Hf-silicate/SiO2 interface for W gated HfO2/Hf-silicate/SiO2 capacitor.

Comparative study of gamma ray shielding and some properties of PbO–SiO2–Al2O3 and Bi2O3–SiO2–Al2O3 glass systems

International Nuclear Information System (INIS)

Singh, K.J.; Kaur, Sandeep; Kaundal, R.S.

2014-01-01

Gamma-ray shielding properties have been estimated in terms of mass attenuation coefficient, half value layer and mean free path values, whereas, structural studies have been performed in terms of density, optical band gap, glass transition temperature and longitudinal ultrasonic velocity parameters. X-ray diffraction, UV–visible, DSC and ultrasonic techniques have been used to explore the structural properties of PbO–SiO 2 –Al 2 O 3 and Bi 2 O 3 –SiO 2 –Al 2 O 3 glass systems. - Highlights: • Bi 2 O 3 –SiO 2 –Al 2 O 3 and PbO–SiO 2 –Al 2 O 3 glasses can replace conventional concretes as gamma-ray shielding materials. • Gamma-ray shielding properties improve with the addition of heavy metals. • Rigidity deteriorates with the increase in the content of heavy metals. • Bi 2 O 3 –SiO 2 –Al 2 O 3 glass system is better than PbO–SiO 2 –Al 2 O 3 glass system in terms of gamma-ray shielding as well as structural properties

Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

Energy Technology Data Exchange (ETDEWEB)

Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Billen, Arne [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Heyns, Marc [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Delabie, Annelies [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium)

2016-10-30

Highlights: • O{sub 3} or O{sub 2} exposures on H-Si(100) result in O ALs with different surface structures. • Si-EPI on O AL using O{sub 3} process is by direct epitaxial growth mechanism. • Si-EPI on O AL using O{sub 2} process is by epitaxial lateral overgrowth mechanism. • Distortions by O AL, SiH{sub 4} flux rate and Si thickness has an impact on Si-EPI quality. - Abstract: The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O{sub 3}) or oxygen (O{sub 2}) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH{sub 4}) at 500 °C. After O{sub 3} exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH{sub 4} reactants, allowing more time for surface diffusion. After O{sub 2} exposure, the O atoms are present in the form of SiO{sub x} clusters. Regions of hydrogen-terminated Si remain present between the SiO{sub x} clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO{sub 2} and on Si nanowires

Energy Technology Data Exchange (ETDEWEB)

Vega, Nadia Celeste; Comedi, David [Universidad Nacional de Tucuman (FACET/UNT), (Argentina). Facultad de Ciencias Exactas y Tecnologia. Dept. de Fisica. Lab. de Fisica del Solido; Audebert, Fernando [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Tirado, Monica, E-mail: mtirado@herrera.unt.edu.ar [Universidad Nacional de Tucuman (FACET/UNT), (Argentina). Facultad de Ciencias Exactas y Tecnologia. Dept. de Fisica. Lab. de Nanomateriales y de Propiedades Dielectricas; Rodriguez, Andres; Rodriguez, Tomas [Universidad Politecnica de Madrid (ETSIT/UPM), Madrid (Spain). Escuela Tecnica Superior de Ingenieros de Telecomucacion. Tecnologia Electronica; Hughes, Gareth M.; Grovenor, Chris R.M. [University of Oxford, Parks Road, OX (United Kingdom). Dept. of Materials

2013-11-01

ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO{sub 2} thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 Degree-Sign C and 720 Degree-Sign C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO{sub 2} interfaces. Photoluminescence, electrical conductance and photo conductance of ZnO-NFN was studied for the sample grown on SiO{sub 2}. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances. (author)

Optical properties of ZrO2, SiO2 and TiO2-SiO2 xerogels and coatings doped with Eu3+ and Eu2+

Directory of Open Access Journals (Sweden)

Gonçalves Rogéria R.

1999-01-01

Full Text Available Eu3+ doped bulk monoliths and thin films were obtained by sol-gel methods in the ZrO2, SiO2 and SiO2-TiO2 systems. Eu3+ 5D0 ® 7FJ emission and decay time characteristics were measured during the entire experimental preparation route from the initial sol to the final xerogels. The crystalline phases identified were tetragonal ZrO2 and mixtures of rutile and anatase TiO2 at high temperature treatments in bulk samples. Good quality thin films were obtained for all systems by dip-coating optical glasses (Schott BK270. The same spectroscopic features were observed either for the bulk monoliths or the films. By appropriate heat treatments under H2 atmosphere Eu2+ containing samples could be obtained in the SiO2-TiO2 system.

Ti-catalyzed HfSiO4 formation in HfTiO4 films on SiO2 studied by Z-contrast scanning electron microscopy

Directory of Open Access Journals (Sweden)

Elizabeth Ellen Hoppe

2013-08-01

Full Text Available Hafnon (HfSiO4 as it is initially formed in a partially demixed film of hafnium titanate (HfTiO4 on fused SiO2 is studied by atomic number (Z contrast high resolution scanning electron microscopy, x-ray diffraction, and Raman spectroscopy and microscopy. The results show exsoluted Ti is the catalyst for hafnon formation by a two-step reaction. Ti first reacts with SiO2 to produce a glassy Ti-silicate. Ti is then replaced by Hf in the silicate to produce HfSiO4. The results suggest this behavior is prototypical of other Ti-bearing ternary or higher order oxide films on SiO2 when film thermal instability involves Ti exsolution.

Preliminary study in development of glass-ceramic based on SiO2-LiO2 system, starting of different SiO2 starting powders

International Nuclear Information System (INIS)

Daguano, J.K.M.F.; Santos, F.A.; Santos, C.; Marton, L.F.M.; Conte, R.A.; Rodrigues Junior, D.; Melo, F.C.L.

2009-01-01

In this work, lithium disilicate glass-ceramics were developed starting of the rice ash- SiO 2 and Li 2 CO 3 powders. The results were compared with glass ceramics based on the lithium disilicate obtained by commercial SiO 2 powders. Glass were melted at 1580 deg C, and annealed at 850 deg C. X-Ray diffraction and scanning electron microscopy were used for characterization of the materials, and hardness and fracture toughness were evaluated using Vickers indentation method. Glasses with amorphous structure were obtained in both materials. After annealing, 'rice-ash' samples presented Li 2 SiO 3 and residual SiO 2 as crystalline phases. On the other side, commercial SiO 2 - Samples presented only Li 2 Si 2 O 5 as crystalline phases and the better results of hardness and fracture toughness. (author)

Ultrahigh broadband photoresponse of SnO2 nanoparticle thin film/SiO2/p-Si heterojunction.

Science.gov (United States)

Ling, Cuicui; Guo, Tianchao; Lu, Wenbo; Xiong, Ya; Zhu, Lei; Xue, Qingzhong

2017-06-29

The SnO 2 /Si heterojunction possesses a large band offset and it is easy to control the transportation of carriers in the SnO 2 /Si heterojunction to realize high-response broadband detection. Therefore, we investigated the potential of the SnO 2 nanoparticle thin film/SiO 2 /p-Si heterojunction for photodetectors. It is demonstrated that this heterojunction shows a stable, repeatable and broadband photoresponse from 365 nm to 980 nm. Meanwhile, the responsivity of the device approaches a high value in the range of 0.285-0.355 A W -1 with the outstanding detectivity of ∼2.66 × 10 12 cm H 1/2 W -1 and excellent sensitivity of ∼1.8 × 10 6 cm 2 W -1 , and its response and recovery times are extremely short (oxide or oxide/Si based photodetectors. In fact, the photosensitivity and detectivity of this heterojunction are an order of magnitude higher than that of 2D material based heterojunctions such as (Bi 2 Te 3 )/Si and MoS 2 /graphene (photosensitivity of 7.5 × 10 5 cm 2 W -1 and detectivity of ∼2.5 × 10 11 cm H 1/2 W -1 ). The excellent device performance is attributed to the large Fermi energy difference between the SnO 2 nanoparticle thin film and Si, SnO 2 nanostructure, oxygen vacancy defects and thin SiO 2 layer. Consequently, practical highly-responsive broadband PDs may be actualized in the future.

Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

International Nuclear Information System (INIS)

Kling, A.; Ortiz, M.I.; Prieto, A.C.; Rodriguez, A.; Rodriguez, T.; Jimenez, J.; Ballesteros, C.; Soares, J.C.

2006-01-01

Nanomemories, containing Ge-nanoparticles in a SiO 2 matrix, can be produced by dry thermal oxidation of a SiGe layer deposited onto a Si-wafer with a barrier SiO 2 layer on its top. Rutherford backscattering spectrometry has been used to characterize the kinetics of the oxidation process, the composition profile of the growing oxide, the Ge-segregation and its diffusion into the barrier oxide in samples with thin and thick barrier oxide layers. The Ge segregated during the oxidation of the SiGe layer diffuses into the barrier oxide. In the first case the diffusion through the thin oxide is enhanced by the proximity of the substrate that acts as a sink for the Ge, resulting in the formation of a low Ge concentration SiGe layer in the surface of the Si-wafer. In the second case, the Ge-diffusion progresses as slowly as in bulk SiO 2 . Since barrier oxide layers as thin as possible are favoured for device fabrication, the structures should be oxidized at lower temperatures and the initial SiGe layer thickness reduced to minimize the Ge-diffusion

Tunable Synthesis of SiC/SiO2 Heterojunctions via Temperature Modulation

Directory of Open Access Journals (Sweden)

Wei Li

2018-05-01

Full Text Available A large-scale production of necklace-like SiC/SiO2 heterojunctions was obtained by a molten salt-mediated chemical vapor reaction technique without a metallic catalyst or flowing gas. The effect of the firing temperature on the evolution of the phase composition, microstructure, and morphology of the SiC/SiO2 heterojunctions was studied. The necklace-like SiC/SiO2 nanochains, several centimeters in length, were composed of SiC/SiO2 core-shell chains and amorphous SiO2 beans. The morphologies of the as-prepared products could be tuned by adjusting the firing temperature. In fact, the diameter of the SiO2 beans decreased, whereas the diameter of the SiC fibers and the thickness of the SiO2 shell increased as the temperature increased. The growth mechanism of the necklace-like structure was controlled by the vapor-solid growth procedure and the modulation procedure via a molten salt-mediated chemical vapor reaction process.

Structural studies of gels and gel-glasses in the SiO2-GeO2 system using vibrational spectroscopy

Science.gov (United States)

Mukherjee, Shyama P.; Sharma, Shiv K.

1986-01-01

GeO2 gel and gels in the SiO2-GeO2 system synthesized by the hydrolytic polycondensation of metal alkoxides have been studied by infrared and Raman spectroscopic techniques. The molecular structures, hydroxyl contents, and crystallinity of gels and gel-glasses in relation to the thermal history and GeO2 concentration were investigated. The binary compositions having up to 70 mol percent GeO2 were examined.

Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

1994-01-01

High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

Chlorobenzene, chloroform, and carbon tetrachloride adsorption on undoped and metal-doped sol-gel substrates (SiO{sub 2}, Ag/SiO{sub 2}, Cu/SiO{sub 2} and Fe/SiO{sub 2})

Energy Technology Data Exchange (ETDEWEB)

Hernandez, M.A. [Postgrado de Ciencias Ambientales and Departamento de Investigacion en Zeolitas, Instituto de Ciencias, Universidad Autonoma de Puebla, Edificio 76, Complejo de Ciencias, Ciudad Universitaria, CP 72570 Puebla (Mexico)], E-mail: mighern@siu.buap.mx; Gonzalez, A.I.; Corona, L.; Hernandez, F. [Postgrado de Ciencias Ambientales and Departamento de Investigacion en Zeolitas, Instituto de Ciencias, Universidad Autonoma de Puebla, Edificio 76, Complejo de Ciencias, Ciudad Universitaria, CP 72570 Puebla (Mexico); Rojas, F.; Asomoza, M.; Solis, S. [Departamento de Quimica, Universidad Autonoma Metropolitana-Iztapalapa, P.O. Box 55-534, D.F. Mexico (Mexico); Portillo, R.; Salgado, M.A. [Facultad de Ciencias Quimicas, Universidad Autonoma de Puebla (Mexico)

2009-02-15

Adsorption isotherms of chlorobenzene, chloroform and carbon tetrachloride vapors on undoped SiO{sub 2}, and metal-doped Ag/SiO{sub 2}, Cu/SiO{sub 2} and Fe/SiO{sub 2} substrates were measured in the temperature range of 398-593 K. These substrates were prepared from a typical sol-gel technique in the presence of metal dopants that rendered an assortment of microporous-mesoporous solids. The relevant characteristic of these materials was the different porosities and micropore to mesopore volume ratios that were displayed; this was due to the effect that the cationic metal valence exerts on the size of the sol-gel globules that compose the porous solid. The texture of these SiO{sub 2} materials was analyzed by X-ray diffraction (XRD), FTIR, and diverse adsorption methods. The pore-size distributions of the adsorbents confirmed the existence of mesopores and supermicropores, while ultramicropores were absent. The Freundlich adsorption model approximately fitted the chlorinated compounds adsorption data on the silica substrates by reason of a heterogeneous energy distribution of adsorption sites. The intensity of the interaction between these organic vapors and the surface of the SiO{sub 2} samples was analyzed through evaluation of the isosteric heat of adsorption and standard adsorption energy; from these last results it was evident that the presence of metal species within the silica structure greatly affected the values of both the amounts adsorbed as well as of the isosteric heats of adsorption.

Dependence of Photocatalytic Activity of TiO2-SiO2 Nanopowders

Directory of Open Access Journals (Sweden)

M. Riazian

2014-10-01

Full Text Available Structural properties and chemical composition change the photocatalytic activity in TiO2-SiO2 nanopowder composite. The SiO2-TiO2 nanostructure is synthesized based on sol–gel method. The nanoparticles are characterized by x-ray fluorescents (XRF, x- ray diffraction (XRD, tunneling electron microscopy (TEM, field emission scanning electron microscopy (FE-SEM, UV-vis. Spectrophotometer and furrier transmission create infrared absorption (FTIR techniques. The rate constant k for the degradation of methylen blue in its aqueous solution under UV irradiation is determined as a measure of photocatalytic activity. Dependence between photocatalytic activity and SiO2 content in the composite is determined. Rate constant k is found dependent on the content of SiO2 in the composite that calcined at 900 oC. The addition of low composition SiO2 to the TiO2 matrix (lower than 45% enhances the photocatalytic activity due to thermal stability and increasing in the surface area. The effects of chemical compositions on the surface topography and the crystallization of phases are studied.

Alpha-particle irradiation induced defects in SiO2 films of Si-SiO2 structures

International Nuclear Information System (INIS)

Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.

1996-01-01

The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)

More accurate definition of liquation dome in Na2O-B2O3-SiO2 system

International Nuclear Information System (INIS)

Alekseeva, Z.D.; Mazurin, O.V.; Aver'yanov, V.I.; Galakhov, F.Ya.

1977-01-01

The liquation region in the system Na 2 O-B 2 O 3 -SiO 2 was investigated. The liquation temperatures were determined by the boundary of disappearance of opalescence in specimens with pre-induced opalescence. Extrapolation of the concentration dependences of the liquation temperature along sections with a constant SiO 2 content to a point indicates that with a SiO 2 content of 20-40% the liquation boundary in the system B 2 O 3 -SiO 2 hardly lies above 450 deg C

ZnO epitaxy on SiC(0001-bar) substrate: Comparison with ZnO/SiC(0 0 0 1) heterostructure

International Nuclear Information System (INIS)

Ashrafi, Almamun; Aminuzzaman, Mohammod

2011-01-01

ZnO thin layers deposited on 6H-SiC substrates showed six-fold crystal symmetry with an epitaxial relationship of (0 0 0 2) ZnO ||(0 0 0 6) SiC and [112-bar 0] ZnO ||[112-bar 0] SiC . Despite the different 6H-SiC substrate surface orientations for the ZnO epitaxy, the orientation relationship of ZnO/6H-SiC heterostructures is identical, as confirmed by X-ray diffraction studies. In these ZnO/6H-SiC(0 0 0 1) and ZnO/6H-SiC(0001-bar) heterostructures, the valence band offsets are measured to be 1.12 eV and 1.09 eV, leading to the conduction band offset values of 0.75 eV and 0.72 eV, respectively. These slightly different band-offset values in ZnO/6H-SiC heterojunctions are attributed to the variation of valence band maximums and the different interface charge compensation mechanisms.

Model for efficient visible emission from Si nanocrystals ion beam synthesized in SiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Lopez, M. E-mail: mlopez@el.ub.es; Garrido, B.; Bonafos, C.; Perez-Rodriguez, A.; Morante, J.R.; Claverie, A

2001-05-01

The photoluminescence (PL) emission of Si nanocrystals ion beam synthesized in SiO{sub 2} is studied in this work as a function of annealing time and initial Si atomic excess (super-saturation). The optical properties of this system have been correlated with the characteristics of the nanocrystal population. The Si nanocrystals show a wide and very intense PL red/infrared emission. This emission peaks at about 1.7 eV for the low super-saturation range between 1% and 10% and shifts to the infrared for higher super-saturation (20% and 30%). Remarkably, there is a linear increase of PL intensity versus super-saturation in the low range. Moreover, the annealing kinetic studies show a typical behavior of PL intensity with annealing time, with a fast transitory increase that bends over to reach asymptotic saturation. The PL intensity saturation is satisfactorily explained by the Ostwald ripening stage of the nanocrystal population while the transient stage is a consequence of both nanocrystal growth and nanocrystal surface passivation mechanisms acting together. Indeed, electron spin resonance measurements demonstrate that the concentration of P{sub b} centers (Si dangling bonds) at the Si-SiO{sub 2} interface correlates inversely with PL intensity during most of the transient stage.

Non-condensed (oxo)nitridosilicates: La{sub 3}-[SiN{sub 4}]F and the polymorph o-La{sub 3}-[SiN{sub 3}O]O

Energy Technology Data Exchange (ETDEWEB)

Durach, Dajana; Schnick, Wolfgang [Department of Chemistry, Chair in Inorganic Solid-State Chemistry, University of Munich (LMU) (Germany)

2015-08-15

The isotypic compounds La{sub 3}[SiN{sub 4}]F and La{sub 3}[SiN{sub 3}O]O were synthesized in a radio-frequency furnace at 1600 C. The crystal structures [Pnma (no. 62), Z = 4; La{sub 3}(SiN{sub 4})F: a = 9.970(3), b = 7.697(2), c = 6.897(2) Aa, V = 529.3(3) Aa{sup 3}; La{sub 3}(SiON{sub 3})O: a = 9.950(2), b = 7.6160(15), c = 6.9080(14) Aa, V = 523.48(18) Aa{sup 3}] were elucidated from single-crystal X-ray diffraction data and corroborated by Rietveld refinement, lattice-energy calculations (Madelung part of lattice energy, MAPLE) and Raman/FTIR spectroscopy. Both compounds are homeotypic with Na{sub 2}Pr[GeO{sub 4}]OH forming a network of vertex-sharing FLa{sub 6}/OLa{sub 6} octahedra, whose voids are filled with non-condensed SiN{sub 4}/SiN{sub 3}O tetrahedra. o-La{sub 3}[SiON{sub 3}]O is the orthorhombic polymorph of this compound, which probably represents the high-temperature modification, whereas the tetragonal polymorph t-La{sub 3}[SiON{sub 3}]O represents the low-temperature modification. While the space group of the t-polymorph [I4/mcm (no. 140)] differs from the new La{sub 3}[SiN{sub 4}]F and o-La{sub 3}[SiN{sub 3}O]O, the crystal structure contains the same linking pattern. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Application of Molecular Imprinted Magnetic Fe3O4@SiO2 Nanoparticles for Selective Immobilization of Cellulase.

Science.gov (United States)

Tao, Qing-Lan; Li, Yue; Shi, Ying; Liu, Rui-Jiang; Zhang, Ye-Wang; Guo, Jianyong

2016-06-01

Magnetic Fe3O4@SiO2 nanoparticles were prepared with molecular imprinting method using cellulase as the template. And the surface of the nanoparticles was chemically modified with arginine. The prepared nanoparticles were used as support for specific immobilization of cellulase. SDS-PAGE results indicated that the adsorption of cellulase onto the modified imprinted nanoparticles was selective. The immobilization yield and efficiency were obtained more than 70% after the optimization. Characterization of the immobilized cellulase revealed that the immobilization didn't change the optimal pH and temperature. The half-life of the immobilized cellulase was 2-fold higher than that of the free enzyme at 50 degrees C. After 7 cycles reusing, the immobilized enzyme still retained 77% of the original activity. These results suggest that the prepared imprinted nanoparticles have the potential industrial applications for the purification or immobilization of enzymes.

Facile and efficient synthesis of the surface tantalum hydride (≡SiO)2TaIIIH and tris-siloxy tantalum (≡SiO)3TaIII starting from novel tantalum surface species (≡SiO)TaMe4 and (≡SiO)2TaMe 3

KAUST Repository

Chen, Yin

2014-03-10

By grafting of TaMe5 (1) on the surface of silica partially dehydroxylated at 500 C (silica500), a mixture of (≡SiO)TaMe4 (2a; major, 65 ± 5%) and (≡SiO) 2TaMe3 (2b; minor, 35 ± 5%) was produced, which has been characterized by microanalysis, IR, and SS NMR (1H, 13C, 1H-13C HETCOR, proton double and triple quantum). After grafting, these surface organometallic compounds are more stable than the precursor TaMe5. Treatment of 2a,b with water and H 2 resulted in the formation of methane in amount of 3.6 ± 0.2 and 3.4 ± 0.2 mol/grafted Ta, respectively. 2a,b react with H2 (800 mbar) to form (≡SiO)2TaH. After (≡SiO) 2TaH was heated to 500 C under hydrogen or vacuum, [(≡SiO) 3Ta][≡SiH] was produced, and the structure was confirmed by IR, NMR, and EXAFS. Considering the difficulty of the previous preparation method, these syntheses represent a facile and convenient way to prepare tantalum surface species (≡SiO)2TaH and (≡SiO)3Ta via the intermediate of the new surface organometallic precursors: (≡SiO)TaMe4/(≡SiO)2TaMe3. (≡SiO)2TaH and (≡SiO)3Ta exhibit equal reactivities in alkane metathesis and ethylene polymerization in comparison to those in previous reports. © 2014 American Chemical Society.

Facile and efficient synthesis of the surface tantalum hydride (≡SiO)2TaIIIH and tris-siloxy tantalum (≡SiO)3TaIII starting from novel tantalum surface species (≡SiO)TaMe4 and (≡SiO)2TaMe 3

KAUST Repository

Chen, Yin; Ould-Chikh, Samy; Abou-Hamad, Edy; Callens, Emmanuel; Mohandas, Janet Chakkamadathil; Khalid, Syed M.; Basset, Jean-Marie

2014-01-01

By grafting of TaMe5 (1) on the surface of silica partially dehydroxylated at 500 C (silica500), a mixture of (≡SiO)TaMe4 (2a; major, 65 ± 5%) and (≡SiO) 2TaMe3 (2b; minor, 35 ± 5%) was produced, which has been characterized by microanalysis, IR, and SS NMR (1H, 13C, 1H-13C HETCOR, proton double and triple quantum). After grafting, these surface organometallic compounds are more stable than the precursor TaMe5. Treatment of 2a,b with water and H 2 resulted in the formation of methane in amount of 3.6 ± 0.2 and 3.4 ± 0.2 mol/grafted Ta, respectively. 2a,b react with H2 (800 mbar) to form (≡SiO)2TaH. After (≡SiO) 2TaH was heated to 500 C under hydrogen or vacuum, [(≡SiO) 3Ta][≡SiH] was produced, and the structure was confirmed by IR, NMR, and EXAFS. Considering the difficulty of the previous preparation method, these syntheses represent a facile and convenient way to prepare tantalum surface species (≡SiO)2TaH and (≡SiO)3Ta via the intermediate of the new surface organometallic precursors: (≡SiO)TaMe4/(≡SiO)2TaMe3. (≡SiO)2TaH and (≡SiO)3Ta exhibit equal reactivities in alkane metathesis and ethylene polymerization in comparison to those in previous reports. © 2014 American Chemical Society.

Photocatalytic application of TiO2/SiO2-based magnetic nanocomposite (Fe3O4@SiO2/TiO2 for reusing of textile wastewater

Directory of Open Access Journals (Sweden)

Laleh Enayati Ahangar

2016-01-01

Full Text Available In this research we have developed a treatment method for textile wastewater by TiO2/SiO2-based magnetic nanocomposite. Textile wastewater includes a large variety of dyes and chemicals and needs treatments. This manuscript presents a facile method for removing dyes from the textile wastewater by using TiO2/SiO2-based nanocomposite (Fe3O4@SiO2/TiO2 under UV irradiation. This magnetic nanocomposite, as photocatalytically active composite, is synthesized via solution method in mild conditions. A large range of cationic, anionic and neutral dyes including: methyl orange, methylene blue, neutral red, bromocresol green and methyl red are used for treatment investigations. Neutral red and bromocresol green have good results in reusing treatment. The high surface area of nanocomposites improve the kinetic of wastewater treatment. In this method, by using the magnetic properties of Fe3O4 nanoparticles, TiO2-based photocatalyst could be separated and reused for 3 times. The efficiency of this method is respectively 100% and 65% for low concentration (10 ppm and high concentration (50 ppm of neutral red and bromocrosol green after 3 h treatment. The efficiency of treatment using the second used nanocomposite was 90% for 10 ppm of the same dyes.

The Effect of SiO2 Shell on the Suppression of Photocatalytic Activity of TiO2 and ZnO Nanoparticles

International Nuclear Information System (INIS)

Lee, Min Hee; Lee, Choon Soo; Patil, Umakant Mahadev; Kochuveedu, Saji Thomas

2012-01-01

In this study, we investigate the potential use of TiO 2 SiO 2 and ZnO SiO 2 core/shell nanoparticles (NPs) as effective UV shielding agent. In the typical synthesis, SiO 2 was coated over different types of TiO 2 (anatase and rutile) and ZnO by sol-gel method. The synthesized TiO 2 SiO 2 and ZnO SiO 2 Nps were characterized by UV-Vis, XRD, Sem and TEM. The UV-vis absorbance and transmittance spectra of core shell NPs showed an efficient blocking effect in the UV region and more than 90% transmittance in the visible region. XRD and SAED studies confirmed the formation of amorphous SiO 2 coated over the TiO 2 and ZnO NPs. The FESEM and TEM images shows that coating of SiO 2 over the surface of anatase, rutile TiO 2 and ZnO NPs resulted in the increase in particle size by ∼30 nm. In order to study the UV light shielding capability of the samples, photocatalytic degradation of methylene blue dye on TiO 2 SiO 2 and ZnO SiO 2 NPs was performed. Photocatalytic activity for both types of TiO 2 NPs was partially suppressed. In comparison, the photocatalytic activity of ZnO almost vanished after the SiO 2 coating

The influence of SiO2 Addition on 2MgO-Al2O3-3.3P2O5 Glass

DEFF Research Database (Denmark)

Larsen, P.H.; Poulsen, F.W.; Berg, Rolf W.

1999-01-01

2MgO-Al2O3-3.3P2O5 glasses with increasing amounts of SiO2 are considered for sealing applications in Solid Oxide Fuel Cells (SOFC). The change in chemical durability under SOFC anode conditions and the linear thermal expansion is measured as functions of the SiO2 concentration. Raman spectroscopy...... analysis of the glasses reveals no sign of important changes in the glass structure upon SiO2 addition. Some increase in glass durability with SiO2 concentration is reported and its cause is discussed....

SIMULTANEOUS OBSERVATIONS OF SiO AND H{sub 2}O MASERS TOWARD KNOWN STELLAR H{sub 2}O MASER SOURCES

Energy Technology Data Exchange (ETDEWEB)

Kim, Jaeheon [Yonsei University Observatory, Seongsan-ro 262, Seodaemun, Seoul 120-749 (Korea, Republic of); Cho, Se-Hyung [Korean VLBI Network Yonsei Radio Astronomy Observatory, Yonsei University, Seongsan-ro 262, Seodaemun, Seoul 120-749 (Korea, Republic of); Kim, Sang Joon, E-mail: jhkim@kasi.re.kr, E-mail: cho@kasi.re.kr, E-mail: sjkim1@khu.ac.kr [Department of Astronomy and Space Science, Kyung Hee University, Seocheon-Dong, Giheung-Gu, Yongin, Gyeonggi-Do 446-701 (Korea, Republic of)

2013-01-01

We present the results of simultaneous observations of SiO v = 1, 2, {sup 29}SiO v = 0, J = 1-0, and H{sub 2}O 6{sub 16}-5{sub 23} maser lines toward 152 known stellar H{sub 2}O maser sources using the Yonsei 21 m radio telescope of the Korean VLBI Network from 2009 June to 2011 January. Both SiO and H{sub 2}O masers were detected from 62 sources with a detection rate of 40.8%. The SiO-only maser emission without H{sub 2}O maser detection was detected from 27 sources, while the H{sub 2}O-only maser without SiO maser detection was detected from 22 sources. Therefore, the overall SiO maser emission was detected from 89 sources, resulting in a detection rate of 58.6%. We have identified 70 new detections of the SiO maser emission. For both H{sub 2}O and SiO maser detected sources, the peak and integrated antenna temperatures of SiO masers are stronger than those of H{sub 2}O masers in both Mira variables and OH/IR stars and the relative intensity ratios of H{sub 2}O to SiO masers in OH/IR stars are larger than those in Mira variables. In addition, distributions of 152 observed sources were investigated in the IRAS two-color diagram.

Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

International Nuclear Information System (INIS)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

2014-01-01

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

SIMULTANEOUS OBSERVATIONS OF SiO AND H2O MASERS TOWARD SYMBIOTIC STARS

International Nuclear Information System (INIS)

Cho, Se-Hyung; Kim, Jaeheon

2010-01-01

We present the results of simultaneous observations of SiO v = 1, 2, J = 1-0, 29 SiO v = 0, J = 1-0, and H 2 O 6 16 -5 23 maser lines performed with the KVN Yonsei 21 m radio telescope from 2009 November to 2010 January. We searched for these masers in 47 symbiotic stars and detected maser emission from 21 stars, giving the first time detection from 19 stars. Both SiO and H 2 O masers were detected from seven stars of which six were D-type symbiotic stars and one was an S-type star, WRAY 15-1470. In the SiO maser emission, the 28 SiO v = 1 maser was detected from 10 stars, while the v = 2 maser was detected from 15 stars. In particular, the 28 SiO v = 2 maser emission without the v = 1 maser detection was detected from nine stars with a detection rate of 60%, which is much higher than that of isolated Miras/red giants. The 29 SiO v = 0 maser emission was also detected from two stars, H 2-38 and BF Cyg, together with the 28 SiO v = 2 maser. We conclude that these different observational results between isolated Miras/red giants and symbiotic stars may be related with the presence of hot companions in a symbiotic binary system.

Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

Science.gov (United States)

Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

2018-04-01

The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

Infrared and Raman spectroscopic characterization of the silicate mineral olmiite CaMn2+[SiO3(OH)](OH) - implications for the molecular structure

Science.gov (United States)

Frost, Ray L.; Scholz, Ricardo; López, Andrés; Xi, Yunfei; Granja, Amanda; Žigovečki Gobac, Željka; Lima, Rosa Malena Fernandes

2013-12-01

We have studied the mineral olmiite CaMn[SiO3(OH)](OH) which forms a series with its calcium analogue poldervaartite CaCa[SiO3(OH)](OH) using a range of techniques including scanning electron microscopy, thermogravimetric analysis, Raman and infrared spectroscopy. Chemical analysis shows the mineral is pure and contains only calcium and manganese in the formula. Thermogravimetric analysis proves the mineral decomposes at 502 °C with a mass loss of 8.8% compared with the theoretical mass loss of 8.737%. A strong Raman band at 853 cm-1 is assigned to the SiO stretching vibration of the SiO3(OH) units. Two Raman bands at 914 and 953 cm-1 are attributed to the antisymmetric vibrations. Two intense Raman bands observed at 3511 and 3550 cm-1 are assigned to the OH stretching vibration of the SiO3(OH) units. The observation of multiple OH bands supports the concept of the non-equivalence of the OH units. Vibrational spectroscopy enables a detailed assessment of the molecular structure of olmiite.

ZnO epitaxy on SiC(0001-bar) substrate: Comparison with ZnO/SiC(0 0 0 1) heterostructure

Energy Technology Data Exchange (ETDEWEB)

Ashrafi, Almamun, E-mail: ash2phy@gmail.com [Department of Physics, University of Vermont, VT 05405 (United States); Aminuzzaman, Mohammod [Department of Chemical Science, Universiti Tunku Abdul Rahman, Perak (Malaysia)

2011-05-01

ZnO thin layers deposited on 6H-SiC substrates showed six-fold crystal symmetry with an epitaxial relationship of (0 0 0 2){sub ZnO}||(0 0 0 6){sub SiC} and [112-bar 0]{sub ZnO}||[112-bar 0]{sub SiC}. Despite the different 6H-SiC substrate surface orientations for the ZnO epitaxy, the orientation relationship of ZnO/6H-SiC heterostructures is identical, as confirmed by X-ray diffraction studies. In these ZnO/6H-SiC(0 0 0 1) and ZnO/6H-SiC(0001-bar) heterostructures, the valence band offsets are measured to be 1.12 eV and 1.09 eV, leading to the conduction band offset values of 0.75 eV and 0.72 eV, respectively. These slightly different band-offset values in ZnO/6H-SiC heterojunctions are attributed to the variation of valence band maximums and the different interface charge compensation mechanisms.

Bulk properties and near-critical behaviour of SiO2 fluid

Science.gov (United States)

Green, Eleanor C. R.; Artacho, Emilio; Connolly, James A. D.

2018-06-01

Rocky planets and satellites form through impact and accretion processes that often involve silicate fluids at extreme temperatures. First-principles molecular dynamics (FPMD) simulations have been used to investigate the bulk thermodynamic properties of SiO2 fluid at high temperatures (4000-6000 K) and low densities (500-2240 kg m-3), conditions which are relevant to protoplanetary disc condensation. Liquid SiO2 is highly networked at the upper end of this density range, but depolymerises with increasing temperature and volume, in a process characterised by the formation of oxygen-oxygen (Odbnd O) pairs. The onset of vaporisation is closely associated with the depolymerisation process, and is likely to be non-stoichiometric at high temperature, initiated via the exsolution of O2 molecules to leave a Si-enriched fluid. By 6000 K the simulated fluid is supercritical. A large anomaly in the constant-volume heat capacity occurs near the critical temperature. We present tabulated thermodynamic properties for silica fluid that reconcile observations from FPMD simulations with current knowledge of the SiO2 melting curve and experimental Hugoniot curves.

Au/SiO2 nanocomposite film substrates with a high number density of Au nanoparticles for molecular conductance measurement

International Nuclear Information System (INIS)

Kim, Dae-Gun; Koyama, Emiko; Kikkawa, Yoshihiro; Kirihara, Kazuhiro; Naitoh, Yasuhisa; Kim, Deok-Soo; Tokuhisa, Hideo; Kanesato, Masatoshi; Koshizaki, Naoto

2007-01-01

Au/SiO 2 nanocomposite films consisting of an extremely high number density of Au nanoparticles dispersed in a SiO 2 matrix a few nanometres thick were deposited by a co-sputtering method, and employed for molecular conductance measurement by immobilizing and bridging conjugated biphenyl molecules on dispersed Au nanoparticles. The number density of Au nanoparticles in the insulating SiO 2 matrix was approximately 14 000 μm 2 , and the average interparticle distance from their neighbours was about 8 nm. The current increased considerably up to the range of nanoamperes after the immobilization of the conjugated biphenyl molecules, 10 5 times larger than without molecules before immobilization. Although the Au nanoparticles can be connected to only 30% of all combinations of neighbouring Au nanoparticles by biphenyl molecules 2.4 nm long from the topological analysis, the biphenyl molecules can bridge most of the Au nanoparticles, and their bridging continuity is over 100 nm in length. Thus the measured current is suggested to come from the continuously bridged molecules between the Au nanoparticles. Furthermore the I-V data of the whole Au/SiO 2 nanocomposite film immobilized with conjugated molecules are confirmed to be in a reasonable range in comparison with the scanning tunnelling spectroscopy data of similar conjugated molecules

Crystallisation of Ba1-xSrxZn2Si2O7 from BaO/SrO/ZnO/SiO2 glass with different ZrO2 and TiO2 concentrations

Science.gov (United States)

Vladislavova, Liliya; Kracker, Michael; Zscheckel, Tilman; Thieme, Christian; Rüssel, Christian

2018-04-01

The effect of different nucleation agents such as ZrO2 and TiO2 was investigated for a first time with respect to their crystallisation behaviour in the glass system BaO-SrO-ZnO-SiO2. In all studied glasses, a Ba1-xSrxZn2Si2O7 (0.1 ≤ x ≤ 0.9) solid solution crystallized. This phase was first described in 2015 to possess a similar structure as the high temperature phase of BaZn2Si2O7 and a thermal expansion close to zero or even negative. It may find applications e.g. as cook panels, telescope mirrors, and furnace windows. Kinetic parameters of the crystallisation process were determined by supplying different heating rates in a differential scanning calorimeter (DSC). The results were evaluated using the equations of Ozawa and Kissinger with respect to the activation energies. Furthermore, the Ozawa method was used for the determination of Avrami parameters, which provides further information on the nucleation and crystallisation processes. Scanning electron microscopy including electron backscatter diffraction (EBSD) was used to characterise the microstructure, to determine the crystallite size and the crystal orientation. For the characterisation of the occurring crystalline phases, X-ray diffraction was used.

Sum Frequency Generation Vibrational Spectroscopy of 1,3-Butadiene Hydrogenation on 4 nm Pt@SiO 2 , Pd@SiO 2 , and Rh@SiO 2 Core–Shell Catalysts

KAUST Repository

Krier, James M.

2015-01-14

© 2014 American Chemical Society. 1,3-Butadiene (1,3-BD) hydrogenation was performed on 4 nm Pt, Pd, and Rh nanoparticles (NPs) encapsulated in SiO2 shells at 20, 60, and 100 °C. The core-shells were grown around polyvinylpyrrolidone (PVP) coated NPs (Stöber encapsulation) prepared by colloidal synthesis. Sum frequency generation (SFG) vibrational spectroscopy was performed to correlate surface intermediates observed in situ with reaction selectivity. It is shown that calcination is effective in removing PVP, and the SFG signal can be generated from the metal surface. Using SFG, it is possible to compare the surface vibrational spectrum of Pt@SiO2 (1,3-BD is hydrogenated through multiple paths and produces butane, 1-butene, and cis/trans-2-butene) to Pd@SiO2 (1,3-BD favors one path and produces 1-butene and cis/trans-2-butene). In contrast to Pt@SiO2 and Pd@SiO2, SFG and kinetic experiments of Rh@SiO2 show a permanent accumulation of organic material.

Selective Dispersive Solid Phase Extraction of Ser-traline Using Surface Molecularly Imprinted Polymer Grafted on SiO2/Graphene Oxide

Directory of Open Access Journals (Sweden)

Faezeh Khalilian

2017-01-01

Full Text Available A surface molecularly imprinted dispersive solid phase extraction coupled with liquid chromatography–ultraviolet detection is proposed as a selective and fast clean-up technique for the determination of sertraline in biological sample. Surface sertraline-molecular imprinted polymer was grafted and synthesized on the SiO2/graphene oxide surface. Firstly SiO2 was coated on synthesized graphene oxide sheet using sol-gel technique. Prior to polymerization, the vinyl group was incorporated on to the surface of SiO2/graphene oxide to direct selective polymerization on the surface. Methacrylic acid, ethylene glycol dimethacrylate and ethanol were used as monomer, cross-linker and progen, respectively. Non-imprinted polymer was also prepared for comparing purposes. The properties of the molecular imprinted polymer were characterized using field emission-scanning electron microscopy and Fourier transform infrared spectroscopy methods. The surface molecular imprinted polymer was utilized as an adsorbent of dispersive solid phase extraction for separation and preconcentration of sertraline. The effects of the different parameters influencing the extraction efficiency, such as sample pH were investigated and optimized. The specificity of the molecular imprinted polymer over the non-imprinted polymer was examined in absence and presence of competitive drugs. Sertraline calibration curve showed linearity in the ranges 1–500 µg L-1. The limits of detection and quantification under optimized conditions were obtained 0.2 and 0.5 µg L-1. The within-day and between-day relative standard deviations (n=3 were 4.3 and 7.1%, respectively. Furthermore, the relative recoveries for spiked biological samples were above 92%.

Design of flexible PANI-coated CuO-TiO2-SiO2 heterostructure nanofibers with high ammonia sensing response values

Science.gov (United States)

Pang, Zengyuan; Nie, Qingxin; Lv, Pengfei; Yu, Jian; Huang, Fenglin; Wei, Qufu

2017-06-01

We report a room-temperature ammonia sensor with extra high response values and ideal flexibility, including polyaniline (PANI)-coated titanium dioxide-silicon dioxide (TiO2-SiO2) or copper oxide-titanium dioxide-silicon dioxide (CuO-TiO2-SiO2) composite nanofibers. Such flexible inorganic TiO2-SiO2 and CuO-TiO2-SiO2 composite nanofibers were prepared by electrospinning, followed by calcination. Then, in situ polymerization of aniline monomers was carried out with inorganic TiO2-SiO2 and CuO-TiO2-SiO2 composite nanofibers as templates. Gas sensing tests at room temperature indicated that the obtained CuO-TiO2-SiO2/PANI composite nanofibers had much higher response values to ammonia gas (ca. 45.67-100 ppm) than most of those reported before as well as the prepared TiO2-SiO2/PANI composite nanofibers here. These excellent sensing properties may be due to the P-N, P-P heterojunctions and a structure similar to field-effect transistors formed on the interfaces between PANI, TiO2, and CuO, which is p-type, n-type, and p-type semiconductor, respectively. In addition, the prepared free-standing CuO-TiO2-SiO2/PANI composite nanofiber membrane was easy to handle and possessed ideal flexibility, which is promising for potential applications in wearable sensors in the future.

ZnO-SiO{sub 2} based nanocomposites prepared by a modified sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Grigorie, Alexandra Carmen [Politehnica University Timisoara, Faculty of Industrial Chemistry and Environmental Engineering, 6 V. Parvan Blv., RO-300223, Timisoara (Romania); Muntean, Cornelia, E-mail: cornelia.muntean@upt.ro [Politehnica University Timisoara, Faculty of Industrial Chemistry and Environmental Engineering, 6 V. Parvan Blv., RO-300223, Timisoara (Romania); Politehnica University Timisoara, Research Institute for Renewable Energy, 2 Piata Victoriei, RO-300006, Timisoara (Romania); Vlase, Titus [West University of Timisoara, 4 V. Parvan Blv., RO-300223, Timisoara (Romania); Locovei, Cosmin [Politehnica University Timisoara, Research Institute for Renewable Energy, 2 Piata Victoriei, RO-300006, Timisoara (Romania); Politehnica University Timisoara, Faculty of Mechanical Engineering, 1 Mihai Viteazul Blv., RO-300222, Timisoara (Romania); Stefanescu, Mircea [Politehnica University Timisoara, Faculty of Industrial Chemistry and Environmental Engineering, 6 V. Parvan Blv., RO-300223, Timisoara (Romania)

2017-01-15

This paper presents a study on nanocomposites formation in ZnO-SiO{sub 2} systems with different ZnO:SiO{sub 2} molar ratios (1:4, 1:1, and 4:1), prepared employing a sol-gel method modified by an original procedure. The evolution of ZnO-SiO{sub 2} systems depending on the composition and temperature was studied by thermal analysis, Fourier transform infrared spectroscopy, X-ray diffractometry and transmission electron microscopy. Zn(II) carboxylate was synthesized in situ in hybrid silica gels by redox reaction between zinc nitrate and 1,3-propanediol. Its thermal decomposition at low temperatures led to ZnO dispersed in the pores of silica matrix. Only for the 4:1 system, at 400 and 600 °C, ZnO nanocrystallites (average size ∼9 nm) embedded in the amorphous silica matrix were obtained, the other systems being amorphous. Whatever the mixture composition is, above 600 °C, ZnO reacts with SiO{sub 2} to form zinc silicate. At 800 °C, for both 1:4 and 1:1 systems, poor crystallized β-Zn{sub 2}SiO{sub 4} and α-Zn{sub 2}SiO{sub 4} phases embedded in silica matrix were formed. Increasing the temperature, at 1000 °C, only for 1:1 system, β-Zn{sub 2}SiO{sub 4} phase turned into single phase α-Zn{sub 2}SiO{sub 4} (average crystallites size 28.3 nm). For 4:1 composition, at 800 and 1000 °C, systems consisting of ZnO and α-Zn{sub 2}SiO{sub 4} nanocrystallites dispersed in silica were obtained. - Highlights: • By modified sol-gel method, ZnO/SiO{sub 2} and Zn{sub 2}SiO{sub 4}/SiO{sub 2} nanocomposites were obtained. • ZnO dispersed in silica matrix results from zinc carboxylate thermal decomposition. • Zinc carboxylate was synthesized in situ in hybrid silica gels via redox reaction. • Evolution of ZnO in SiO{sub 2} matrix depends on temperature and system composition.

Core/shell structured ZnO/SiO2 nanoparticles: Preparation, characterization and photocatalytic property

International Nuclear Information System (INIS)

Zhai Jing; Tao Xia; Pu Yuan; Zeng Xiaofei; Chen Jianfeng

2010-01-01

ZnO nanoparticles were prepared by a simple chemical synthesis route. Subsequently, SiO 2 layers were successfully coated onto the surface of ZnO nanoparticles to modify the photocatalytic activity in acidic or alkaline solutions. The obtained particles were characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectrometry (EDS) and zeta potential. It was found that ultrafine core/shell structured ZnO/SiO 2 nanoparticles were successfully obtained. The photocatalytic performance of ZnO/SiO 2 core/shell structured nanoparticles in Rhodamine B aqueous solution at varied pH value were also investigated. Compared with uncoated ZnO nanoparticles, core/shell structured ZnO/SiO 2 nanoparticles with thinner SiO 2 shell possess improved stability and relatively better photocatalytic activity in acidic or alkaline solutions, which would broaden its potential application in pollutant treatment.

Crack-resistant Al2O3-SiO2 glasses.

Science.gov (United States)

Rosales-Sosa, Gustavo A; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

2016-04-07

Obtaining "hard" and "crack-resistant" glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3-(100-x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3-SiO2 glasses. In particular, the composition of 60Al2O3 • 40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses.

Synthesis and microwave absorption enhancement of Fe-doped NiO@SiO2@graphene nanocomposites

International Nuclear Information System (INIS)

Wang, Lei; Huang, Ying; Ding, Xiao; Liu, Panbo; Zong, Meng; Wang, Yan

2013-01-01

Highlights: • Fe-doped NiO@SiO 2 @graphene composites have excellent microwave performance. • The reflection loss of Fe doped NiO@SiO 2 @graphene was below −10 dB in 7–11 GHz. • The maximum absorption of Fe-doped NiO@SiO 2 @graphene was −51.2 dB at 8.6 GHz. -- Abstract: Fe-doped NiO@SiO 2 @graphene nanocomposites have been successfully fabricated for the first time, in which Fe-doped NiO nanoparticles are about 3 nm in diameter. In order to measure their electromagnetic properties, Fe-doped NiO@SiO 2 @graphene (25 wt%) wax composites were then prepared. The experimental results show that Fe-doped NiO@SiO 2 @graphene nanocomposites exhibit significantly enhanced microwave absorption performance in terms of both the maximum reflection loss value and the absorption bandwidth in comparison with NiO@SiO 2 @graphene. The maximum reflection loss of Fe-doped NiO@SiO 2 @graphene nanocomposites can reach −51.2 dB at 8.6 GHz with a thickness of 4 mm, and the absorption bandwidth with the reflection loss below −10 dB is 4 GHz (from 7 to 11 GHz). Therefore, this kind of nanocomposites may have the potential as high-efficient absorbers for microwave absorption applications

Structural variations and dielectric properties of (Bi1-xL ax ) 2Si O5 (0 ≤x ≤0.1 ): Polycrystallines synthesized by crystallization of Bi-Si-O and Bi-La-Si-O glasses

Science.gov (United States)

Taniguchi, Hiroki; Tatewaki, Shingo; Yasui, Shintaro; Fujii, Yasuhiro; Yamaura, Jun-ichi; Terasaki, Ichiro

2018-04-01

This paper focuses on effects of isovalent La substitution on the crystal structure and dielectric properties of ferroelectric B i2Si O5 . Polycrystalline samples of (Bi1-xL ax ) 2Si O5 are synthesized by crystallization of Bi-Si-O and Bi-La-Si-O glasses with a composition range of 0 ≤x ≤0.1 . The crystal structure changes from monoclinic to tetragonal with increasing La-substitution rate x at room temperature. This structural variation stems from the change in orientation of Si O4 tetrahedra that form one-dimensional chains when they are in the ordered configuration, thus suggesting that lone-pair electrons play an important role in sustaining one-dimensional chains of Si O4 tetrahedra. Synchronizing with the disordering of Si O4 chains, ferroelectric phase transition temperature of (Bi1-xL ax ) 2Si O5 sharply decreases as x increases, and ferroelectricity finally vanishes at around x =0.03 . The present results demonstrate that lone-pair electrons of Bi play an important role in the ferroelectricity of B i2Si O5 through propping the ordered structure of one-dimensional Si O4 chains with stereochemical activity. Furthermore, an additional phase transition has been first discovered in the low-temperature region of (Bi1-xL ax ) 2Si O5 with x ≤0.01 , where the ordered one-dimensional Si O4 chains remain.

A simple transferable adaptive potential to study phase separation in large-scale xMgO-(1-x)SiO2 binary glasses.

Science.gov (United States)

Bidault, Xavier; Chaussedent, Stéphane; Blanc, Wilfried

2015-10-21

A simple transferable adaptive model is developed and it allows for the first time to simulate by molecular dynamics the separation of large phases in the MgO-SiO2 binary system, as experimentally observed and as predicted by the phase diagram, meaning that separated phases have various compositions. This is a real improvement over fixed-charge models, which are often limited to an interpretation involving the formation of pure clusters, or involving the modified random network model. Our adaptive model, efficient to reproduce known crystalline and glassy structures, allows us to track the formation of large amorphous Mg-rich Si-poor nanoparticles in an Mg-poor Si-rich matrix from a 0.1MgO-0.9SiO2 melt.

Synthesis of Vertically-Aligned Carbon Nanotubes from Langmuir-Blodgett Films Deposited Fe Nanoparticles on Al2O3/Al/SiO2/Si Substrate.

Science.gov (United States)

Takagiwa, Shota; Kanasugi, Osamu; Nakamura, Kentaro; Kushida, Masahito

2016-04-01

In order to apply vertically-aligned carbon nanotubes (VA-CNTs) to a new Pt supporting material of polymer electrolyte fuel cell (PEFC), number density and outer diameter of CNTs must be controlled independently. So, we employed Langmuir-Blodgett (LB) technique for depositing CNT growth catalysts. A Fe nanoparticle (NP) was used as a CNT growth catalyst. In this study, we tried to thicken VA-CNT carpet height and inhibit thermal aggregation of Fe NPs by using Al2O3/Al/SiO2/Si substrate. Fe NP LB films were deposited on three typed of substrates, SiO2/Si, as-deposited Al2O3/Al/SiO2/Si and annealed Al2O3/Al/SiO2/Si at 923 K in Ar atmosphere of 16 Pa. It is known that Al2O3/Al catalyzes hydrocarbon reforming, inhibits thermal aggregation of CNT growth catalysts and reduces CNT growth catalysts. It was found that annealed Al2O3/Al/SiO2/Si exerted three effects more strongly than as-deposited Al2O3/Al/SiO2/Si. VA-CNTs were synthesized from Fe NPs-C16 LB films by thermal chemical vapor deposition (CVD) method. As a result, at the distance between two nearest CNTs 28 nm or less, VA-CNT carpet height on annealed Al2O3/Al/SiO2/Si was about twice and ten times thicker than that on SiO2/Si and that on as-deposited Al2O3/Al/SiO2/Si, respectively. Moreover, distribution of CNT outer diameter on annealed Al2O3/Al/SiO2/Si was inhibited compared to that on SiO2/Si. These results suggest that since thermal aggregation of Fe NPs is inhibited, catalyst activity increases and distribution of Fe NP size is inhibited.

Bending Strength of EN AC-44200 – Al2O3 Composites at Elevated Temperatures

OpenAIRE

Kurzawa A.; Kaczmar J. W.

2017-01-01

The paper presents results of bend tests at elevated temperatures of aluminium alloy EN AC-44200 (AlSi12) based composite materials reinforced with aluminium oxide particles. The examined materials were manufactured by squeeze casting. Preforms made of Al2O3 particles, with volumetric fraction 10, 20, 30 and 40 vol.% of particles joined with sodium silicate bridges were used as reinforcement. The preforms were characterised by open porosity ensuring proper infiltration with the EN AC-44200 (A...

The effect of CaO/SiO2 molar ratio of CaO-Al2O3-SiO2 glasses on their structure and reactivity in alkali activated system.

Science.gov (United States)

Kucharczyk, Sylwia; Sitarz, Maciej; Zajac, Maciej; Deja, Jan

2018-04-05

The influence of CaO/SiO 2 molar ratio of calcium aluminosilicate glasses on resulting structure and reactivity was investigated. Chemical compositions of glasses were chosen to mimic the composition of the fly ash and slag amorphous phase. Understanding the reactivity of these materials is of high importance allowing further development of the composite cements to limit the environmental footprint of cement industry. Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy were employed to examine the structure of glasses. Reactivity of the glasses was analyzed on paste samples after 1, 2, 7, 28 and 90days of curing by means of thermogravimetry (TGA), X-ray diffraction (XRD) and FTIR. Spectroscopic results emphasize dependence of the structure on the chemical composition of the glasses. The higher CaO/SiO 2 the more depolymerized the glass network is, though there is no direct correlation with the reactivity. Significant differences in reactivity is observed primarily between the glasses of peraluminous (CaO/Al 2 O 3 1). Amongst the pastes made of glasses of percalcic region a higher degree of reaction at later ages is observed for the paste containing glass of lower CaO/SiO 2 molar ratio. This is due to both degree of depolimerization and the nature of these glasses (pozzolanic and hydraulic materials). No difference of degree of reaction has been observed within the glasses of CaO/SiO 2 lower than 1. Copyright © 2018 Elsevier B.V. All rights reserved.

The effect of CaO/SiO2 molar ratio of CaO-Al2O3-SiO2 glasses on their structure and reactivity in alkali activated system

Science.gov (United States)

Kucharczyk, Sylwia; Sitarz, Maciej; Zajac, Maciej; Deja, Jan

2018-04-01

The influence of CaO/SiO2 molar ratio of calcium aluminosilicate glasses on resulting structure and reactivity was investigated. Chemical compositions of glasses were chosen to mimic the composition of the fly ash and slag amorphous phase. Understanding the reactivity of these materials is of high importance allowing further development of the composite cements to limit the environmental footprint of cement industry. Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy were employed to examine the structure of glasses. Reactivity of the glasses was analyzed on paste samples after 1, 2, 7, 28 and 90 days of curing by means of thermogravimetry (TGA), X-ray diffraction (XRD) and FTIR. Spectroscopic results emphasize dependence of the structure on the chemical composition of the glasses. The higher CaO/SiO2 the more depolymerized the glass network is, though there is no direct correlation with the reactivity. Significant differences in reactivity is observed primarily between the glasses of peraluminous (CaO/Al2O3 1). Amongst the pastes made of glasses of percalcic region a higher degree of reaction at later ages is observed for the paste containing glass of lower CaO/SiO2 molar ratio. This is due to both degree of depolimerization and the nature of these glasses (pozzolanic and hydraulic materials). No difference of degree of reaction has been observed within the glasses of CaO/SiO2 lower than 1.

UV-visible light photocatalytic properties of NaYF4:(Gd, Si)/TiO2 composites

Science.gov (United States)

Mavengere, Shielah; Kim, Jung-Sik

2018-06-01

In this study, a new novel composite photocatalyst of NaYF4:(Gd, Si)/TiO2 phosphor has been synthesized by two step method of solution combustion and sol-gel. The photocatalyst powders were characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-vis spectroscopy and photoluminescence (PL) spectroscopy. Raman spectroscopy confirmed the anatase TiO2 phase which remarkably increased with existence of yttrium silicate compounds between 800 cm-1 and 900 cm-1. Double-addition of Gd3+-Si4+ ions in NaYF4 host introduced sub-energy band levels with intense absorption in the ultraviolet (UV) light region. Photocatalytic activity was examined by exposing methylene blue (MB) solutions mixed with photocatalyst powders to 254 nm UV-C fluorescent lamp and 200 W visible lights. The UV and visible photocatalytic reactivity of the NaYF4:(Gd, 1% Si)/TiO2 phosphor composites showed enhanced MB degradation efficiency. The coating of NaYF4:(Gd, 1% Si) phosphor with TiO2 nanoparticles creates energy band bending at the phosphor/TiO2 interfaces. Thus, these composites exhibited enhanced absorption of UV/visible light and the separation of electron and hole pairs for efficient photocatalysis.

Preparation of orthophosphate glasses in the MgO-CaO-SiO2-Nb2O5-P2O5 system.

Science.gov (United States)

Lee, Sungho; Ueda, Kyosuke; Narushima, Takayuki; Nakano, Takayoshi; Kasuga, Toshihiro

2017-01-01

Niobia/magnesia-containing orthophosphate invert glasses were successfully prepared in our earlier work. Orthophosphate groups in the glasses were cross-linked by tetrahedral niobia (NbO4) and magnesia. The aim of this work is to prepare calcium orthophosphate invert glasses containing magnesia and niobia, incorporating silica, and to evaluate their structures and releasing behaviors. The glasses were prepared by melt-quenching, and their structures and ion-releasing behaviors were evaluated. 31P solid-state nuclear magnetic resonance (NMR) and Raman spectroscopies showed the glasses consist of orthophosphate (PO4), orthosilicate (SiO4), and NbO4 tetrahedra. NbO4 and MgO in the glasses act as network formers. By incorporating SiO2 into the glasses, the chemical durability of the glasses was slightly improved. The glasses reheated at 800°C formed the orthophosphate crystalline phases, such as β-Ca3(PO4)2, Mg3(PO4)2 and Mg3Ca3(PO4)4 in the glasses. The chemical durability of the crystallized glasses was slightly improved. Orthosilicate groups and NbO4 in the glasses coordinated with each other to form Si-O-Nb bonds. The chemical durability of the glasses was slightly improved by addition of SiO2, since the field strength of Si is larger than that of Ca or Mg.

Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

Energy Technology Data Exchange (ETDEWEB)

Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

2015-04-16

In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

Synthesis and crystallographic study of the compounds in the system Cs{sub 2}O - Al{sub 2}O{sub 3} - SiO{sub 2}; Synthese et etude cristallographique des composes du systeme Cs{sub 2}O - Al{sub 2}O{sub 3} - SiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Langlet, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1969-05-01

A study has been made on the preparation, structure and thermal evolution of some definite compounds in the system: Cs{sub 2}O - Al{sub 2}O{sub 3} - SiO{sub 2}. Precise details are given about the structure of the following compounds: CsAlO{sub 2}, RbAlO{sub 2}, KAlO{sub 2} and NaAlO{sub 2}; CsAlO{sub 2}, 2 H{sub 2}O; Cs{sub 2}O, 11 Al{sub 2}O{sub 3}; Cs{sub 2}O, 2 SiO{sub 2}; Cs{sub 2}O, 4 SiO{sub 2} and Rb{sub 2}O, 4 SiO{sub 2}; CsAlSiO{sub 4}; CsAlSi{sub 2}O{sub 6}; Cs{sub 4}Ge{sub 11}O{sub 24} and Rb{sub 4}Ge{sub 11}O{sub 24}. The long term purpose of this work was to find a compound which would be insoluble, refractory and at the same time able to contain radioactive isotopes of cesium and thus suitable as radiation sources. The knowledge of the properties and structure of aluminates, silicates and aluminosilicates is a necessary stage before the elaboration of ceramic caesium sources. The compound which seems quite convenient for this use, Cs{sub 2}AlSi{sub 2}O{sub 6}, is closely related to the natural mineral 'pollucite', and offers interesting properties. (author) [French] Ce travail constitue une etude de la preparation, de la structure et de l'evolution thermique des composes definis du systeme: Cs{sub 2}O - Al{sub 2}O{sub 3} - SiO{sub 2} et de quelques homologues. Des precisions sont donnees sur la structure des composes suivants: CsAlO{sub 2}, RbAlO{sub 2}, KAlO{sub 2} et NaAlO{sub 2}; CsAlO{sub 2}, 2 H{sub 2}O; Cs{sub 2}O, 11 Al{sub 2}O{sub 3}; Cs{sub 2}O, 2 SiO{sub 2}; Cs{sub 2}O, 4 SiO{sub 2} et Rb{sub 2}O, 4 SiO{sub 2}; CsAlSiO{sub 4}; CsAlSi{sub 2}O{sub 6}; Cs{sub 4}Ge{sub 11}O{sub 24} et Rb{sub 4}Ge{sub 11}O{sub 24}. Le but a long terme de cette etude consistait a obtenir un compose a la fois refractaire et insoluble, susceptible de contenir un isotope radioactif du caesium, et d'etre utilise comme source de rayonnement. La connaissance des proprietes et de la structure des aluminates, silicates et aluminosilicates represente une etape necessaire

Fabrication of Carbon Nanotube/SiO2and Carbon Nanotube/SiO2/Ag Nanoparticles Hybrids by Using Plasma Treatment

Directory of Open Access Journals (Sweden)

Li Haiqing

2009-01-01

Full Text Available Abstract Based on plasma-treated single wall carbon nanotubes (SWCNTs, SWCNT/SiO2and thiol groups-functionalized SWCNT/SiO2hybrids have been fabricated through a sol–gel process. By means of thiol groups, Ag nanoparticles have been in situ synthesized and bonded onto the SiO2shell of SWCNT/SiO2in the absence of external reducing agent, resulting in the stable carbon nanotube/SiO2/Ag nanoparticles hybrids. This strategy provides a facile, low–cost, and green methodology for the creation of carbon nanotube/inorganic oxides-metal nanoparticles hybrids.

Viscosity Measurements of SiO2-"FeO"-MgO System in Equilibrium with Metallic Fe

Science.gov (United States)

Chen, Mao; Raghunath, Sreekanth; Zhao, Baojun

2014-01-01

The present study delivers the measurements of viscosities in the SiO2-"FeO"-MgO system in equilibrium with metallic Fe. The rotational spindle technique was used for the measurements at the temperature range of 1523 K to 1773 K (1250 °C to 1500 °C). Molybdenum crucibles and spindles were employed in all measurements. The viscosity measurements were carried out at 31 to 47 mol pct SiO2 and up to 18.8 mol pct MgO. Analysis of the quenched sample by Electron probe X-ray microanalysis after the viscosity measurement enables the composition and microstructure of the slag to be directly linked with the viscosity. The replacement of "FeO" by MgO was found to increase viscosity and activation energy of the SiO2-"FeO"-MgO slags. The modified Quasi-chemical Viscosity Model was further optimized in this system based on the current viscosity measurements.

Comparisons between TiO2- and SiO2-flux assisted TIG welding processes.

Science.gov (United States)

Tseng, Kuang-Hung; Chen, Kuan-Lung

2012-08-01

This study investigates the effects of flux compounds on the weld shape, ferrite content, and hardness profile in the tungsten inert gas (TIG) welding of 6 mm-thick austenitic 316 L stainless steel plates, using TiO2 and SiO2 powders as the activated fluxes. The metallurgical characterizations of weld metal produced with the oxide powders were evaluated using ferritoscope, optical microscopy, and Vickers microhardness test. Under the same welding parameters, the penetration capability of TIG welding with TiO2 and SiO2 fluxes was approximately 240% and 292%, respectively. A plasma column made with SiO2 flux exhibited greater constriction than that made with TiO2 flux. In addition, an anode root made with SiO2 flux exhibited more condensation than that made with TiO2 flux. Results indicate that energy density of SiO2-flux assisted TIG welding is higher than that of TiO2-flux assisted TIG welding.

Use of MnO2 and MnO2 SiO2 for sorbing of Sr-90 from liquid rad waste

International Nuclear Information System (INIS)

Subiarto; Las, Thamzil; Aan BH, Martin; Utomo, Cahyo Hari

1998-01-01

The synthesis of MnO 2 adsorbent and MnO 2 -SiO 2 composite has been done. MnO 2 synthesis is done by the reaction of KMnO 4 , Mn(NO 3 ) 2 .4H 2 O and Na 2 S 2 O 4 ( MnO 2 -A, MnO 2 -B, and MnO 2 -T ). MnO 2 . SiO 2 is made from KMnO 4 , Na 2 SiO 3 , and H 2 O 2 . The result obtained show the best Sr-90 sorption by MnO 2 -A with Kd = 2085.63 ml/g, by MnO 2 -L with Kd = 755.09 ml/g, and by MnO 2 - SiO 2 composite with Kd = 1466.51 ml/g. From this result, we can conclude that MnO 2 -SiO 2 can be expanded for Sr-90 sorption from liquid radioactive waste. (author)

Composition and crystallization kinetics of R2O-Al2O3-SiO2 glass-ceramics

International Nuclear Information System (INIS)

Xiong, Dehua; Cheng, Jinshu; Li, Hong

2010-01-01

The crystallization behavior and microstructure of R 2 O-Al 2 O 3 -SiO 2 (R means K, Na and Li) glass were investigated by means of differential scanning calorimeter (DSC), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The crystallization kinetic parameters including the crystallization apparent activation energy (E a ), the Avrami parameter (n), glass transition temperature (T g ) and the activity energy of glass transition (E t ) were also measured with different methods. The results have shown that: the DSC traces of composition A parent glass have two different precipitation crystallization peaks corresponding to E a1 (A) = 151.4 kJ/mol (Li 2 SiO 3 ) and E a2 (A) = 623.1 kJ/mol (Li 2 Si 2 O 5 ), the average value of n = 1.70 (Li 2 Si 2 O 5 ) for the surface crystallization and E t (A) = 202.8 kJ/mol. And E a (B) = 50.7 kJ/mol (Li 2 SiO 3 ), the average value of n = 3.89 (Li 2 SiO 3 ) for the bulk crystallization and E t (B) = 220.4 kJ/mol for the composition B parent glass. Because of the content of R 2 O is bigger than composition A, composition B parent glass has a lower E a , T g and a larger n, E t .

Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires

CSIR Research Space (South Africa)

Thabethe, S

2014-12-01

Full Text Available Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF...

Characteristics of heterojunctions of amorphous LaAlO2.73 on Si

International Nuclear Information System (INIS)

Huang Yanhong; Zhao Kun; Lu Huibin; Jin Kuijuan; He Meng; Chen Zhenghao; Zhou Yueliang; Yang Guozhen

2006-01-01

High-quality heterojunctions consisting of n-type amorphous LaAlO 3- δ and p-type Si without Si interfacial layer were prepared using a thin film deposition system normally used for laser-molecular beam epitaxy. Good I-V rectifying property, ferroelectricity of interface enhancement and fast photovoltaic effect have been observed in the LaAlO 3- δ /Si p-n heterojunctions. We expect that the multifunctional properties of rectification, ferroelectricity and photovoltaic effect should open up new possibilities in device development and other applications

The application of Cu/SiO2 catalytic system in chemical mechanical planarization based on the stability of SiO2 sol

International Nuclear Information System (INIS)

Li Yan; Liu Yuling; Wang Aochen; Yang Zhixin; Sun Mingbin; Cheng Chuan; Zhang Yufeng; Zhang Nannan

2014-01-01

There is a lot of hydroxyl on the surface of nano SiO 2 sol used as an abrasive in the chemical mechanical planarization (CMP) process, and the chemical reaction activity of the hydroxyl is very strong due to the nano effect. In addition to providing a mechanical polishing effect, SiO 2 sol is also directly involved in the chemical reaction. The stability of SiO 2 sol was characterized through particle size distribution, zeta potential, viscosity, surface charge and other parameters in order to ensure that the chemical reaction rate in the CMP process, and the surface state of the copper film after CMP was not affected by the SiO 2 sol. Polarization curves and corrosion potential of different concentrations of SiO 2 sol showed that trace SiO 2 sol can effectively weaken the passivation film thickness. In other words, SiO 2 sol accelerated the decomposition rate of passive film. It was confirmed that the SiO 2 sol as reactant had been involved in the CMP process of copper film as reactant by the effect of trace SiO 2 sol on the removal rate of copper film in the CMP process under different conditions. In the CMP process, a small amount of SiO 2 sol can drastically alter the chemical reaction rate of the copper film, therefore, the possibility that Cu/SiO 2 as a catalytic system catalytically accelerated the chemical reaction in the CMP process was proposed. According to the van't Hoff isotherm formula and the characteristics of a catalyst which only changes the chemical reaction rate with out changing the total reaction standard Gibbs free energy, factors affecting the Cu/SiO 2 catalytic reaction were derived from the decomposition rate of Cu (OH) 2 and the pH value of the system, and then it was concluded that the CuSiO 3 as intermediates of Cu/SiO 2 catalytic reaction accelerated the chemical reaction rate in the CMP process. It was confirmed that the Cu/SiO 2 catalytic system generated the intermediate of the catalytic reaction (CuSiO 3 ) in the CMP process

Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

Science.gov (United States)

Han, Ki-Lim; Ok, Kyung-Chul; Cho, Hyeon-Su; Oh, Saeroonter; Park, Jin-Seong

2017-08-01

We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 °C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 × 1021 cm-3 is beneficial to reliability. However, the multi-layered buffer device annealed at 350 °C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 × 1021 cm-3.

Internal Friction of (SiO2)1-x (GeO2)x Glasses

OpenAIRE

Kosugi , T.; Kobayashi , H.; Kogure , Y.

1996-01-01

Internal friction of (SiO2)1-x (GeO2)x glasses (x = 0, 5, 10, 24 and 100 mole%) is measured at temperatures between 1.6 and 280 K. The data are filted with the equations for thermally activated relaxation with distributing activation energies in symmetrical double-well potentials. From the determined relaxation strength spectra for each sample, the contributions from each type of microscopic structural units are calculated assuming that transverse motion of the bridging O atom in Si-O-Si, Si-...

A Structural Study on the Foaming Behavior of CaO-SiO2-MO (MO = MgO, FeO, or Al2O3) Ternary Slag System

Science.gov (United States)

Park, Youngjoo; Min, Dong Joon

2017-12-01

The foaming index of the CaO-SiO2-MO (MO = MgO, FeO, or Al2O3) ternary slag system with a fixed CaO/SiO2 ratio is measured to understand the effect of the ionic structure. At 1773 K (1500 °C), the foaming index of the slag increases with Al2O3 addition and decreases with MgO or FeO addition at a fixed CaO/SiO2 ratio. It is verified that the previous correlation between the foaming index and the physical properties could also be valid for the CaO-SiO2-(MgO or Al2O3) system. Raman spectroscopy for the CaO/SiO2 = 1.0 slag is applied to explain the foaming behavior from an ionic structural perspective. From the ionic structural viewpoint, the fractional change in each silicate anion unit is identified by de-convoluted Raman spectra. The Raman spectra indicate that the silicate network structure is polymerized with Al2O3 as an aluminosilicate structure; in contrast, de-polymerization occurs by MgO or FeO addition. Furthermore, the relationship between the silicate structure and the thermodynamic stability function is discussed. Since the ionic structure of the molten slag affects various physical/thermodynamic properties, the foaming behavior could be successfully interpreted from the ionic structural viewpoint.

Tracer diffusion studies of 26Mg, 30Si and 18O in single crystal forsterite (Mg2SiO4) and of 18O in single crystal SiO2

International Nuclear Information System (INIS)

Schachtner, R.

1981-01-01

Tracer diffusion coefficients of Mg, Si and O in monocrystalline forsterite were determined by Sims as a function of temperature and crystal orientation. Former results on oxygen diffusion in SiO 2 single crystals using nuclear activation methods were confirmed by Sims data. The influence of crystal defects and impurities is discussed. (TW)

CoFe2O4-SiO2 Composites: Preparation and Magnetodielectric Properties

Directory of Open Access Journals (Sweden)

T. Ramesh

2016-01-01

Full Text Available Cobalt ferrite (CoFe2O4 and silica (SiO2 nanopowders have been prepared by the microwave hydrothermal (M-H method using metal nitrates as precursors of CoFe2O4 and tetraethyl orthosilicate as a precursor of SiO2. The synthesized powders were characterized by XRD and FESEM. The (100-x (CoFe2O4 + xSiO2 (where x = 0%, 10%, 20%, and 30% composites with different weight percentages have been prepared using ball mill method. The composite samples were sintered at 800°C/60 min using the microwave sintering method and then their structural and morphological studies were investigated using X-ray diffraction (XRD, Fourier transformation infrared (FTIR spectra, and scanning electron microscopy (SEM, respectively. The effect of SiO2 content on the magnetic and electrical properties of CoFe2O4/SiO2 nanocomposites has been studied via the magnetic hysteresis loops, complex permeability, permittivity spectra, and DC resistivity measurements. The synthesized nanocomposites with adjustable grain sizes and controllable magnetic properties make the applicability of cobalt ferrite even more versatile.

SiO{sub 2} effect on spectral and colorimetric properties of europium doped SrO{sub 2}-MgO-xSiO{sub 2} (0.8 {<=} x {<=} 1.6) phosphor for white LEDs

Energy Technology Data Exchange (ETDEWEB)

Chen, B J; Jang, K W; Lee, H S; Jayasimhadri, M; Cho, E J [Department of Physics, Changwon National University, Changwon, 641-773 (Korea, Republic of); Yi, S S [Department of Photonics, Silla University, Pusan 617-736 (Korea, Republic of); Jeong, J H [Department of Physics, Pukyong National University, Pusan 608-737 (Korea, Republic of)], E-mail: kwjang@changwon.ac.kr

2009-05-21

Silicate phosphors with compositions 1.99 SrO{sub 2}-1.0 MgO-xSiO{sub 2}-0.01 Eu{sub 2}O{sub 3} (x = 0.8, 1.0, 1.2, 1.4 and 1.6) were prepared in a reducing atmosphere via a solid state reaction. The resultant phosphors were examined by using x-ray diffraction and confirmed to be a mixture of monoclinic Sr{sub 2}SiO{sub 4} and orthorhombic Mg{sub 2}(Si{sub 2}O{sub 4}). The scanning electron microscope images revealed that SiO{sub 2} content does not influence the morphology of the resultant phosphors. It was also observed that the excitation spectra are dependent on the monitored emission wavelength, and the emission spectra are dependent on the excitation wavelength and the SiO{sub 2} content. The energy transfer between Eu{sup 2+} ions occupying different Sr{sup 2+} sites was discussed. The colour coordinates for these phosphors are tunable based on both the excitation wavelength and the SiO{sub 2} content.

Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

Directory of Open Access Journals (Sweden)

ZHANG Hai-yuan

2017-05-01

Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

Photoluminescence from ZnO-SiO2 opals with different sphere diameters and thicknesses

International Nuclear Information System (INIS)

Yang Yingling; Yan Hongwei; Fu Zhengping; Yang Beifang; Xia Linsheng; Wang Zhen; Zuo Jian; Yu Shijun; Fu Shengquan; Li Fanqing

2007-01-01

We systematically investigated the photoluminescence (PL) and transmittance characteristics of ZnO-SiO 2 opals with varied positions of the stop-band and film thicknesses. An improved ultraviolet (UV) luminescence was observed from ZnO-SiO 2 composites over pure ZnO nanocrystals under 325 nm He-Cd laser excitation at room temperature. The UV PL of ZnO nanocrystals in SiO 2 opals with stop-bands center of 410 nm is sensitive to the thickness of opal films, and the UV PL intensity increases with the film thickness increasing. The PL spectra of ZnO nanocrystals in SiO 2 opals with stop-bands center of 570 nm show a suppression of the weak visible band. The experimental results are discussed based on the scattering and/or absorbance in opal crystals

Study of Direct-Contact HfO2/Si Interfaces

Directory of Open Access Journals (Sweden)

Noriyuki Miyata

2012-03-01

Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

Microstructural dependence on relevant physical-mechanical properties on SiO2-Na2O-CaO-P2O5 biological glasses.

Science.gov (United States)

Rajendran, V; Begum, A Nishara; Azooz, M A; el Batal, F H

2002-11-01

Bioactive glasses of the system SiO2-Na2O-CaO-P2O5 have been prepared by the normal melting and annealing technique. The elastic moduli, attenuation, Vickers hardness, fracture toughness and fracture surface energy have been obtained using the known method at room temperature. The temperature dependence of elastic moduli and attenuation measurements have been extended over a wide range of temperature from 150 to 500 K. The SiO2 content dependence of velocities, attenuation, elastic moduli, and other parameters show an interesting observation at 45 wt% of SiO2 by exhibiting an anomalous behaviour. A linear relation is developed for Tg, which explores the influence of Na2O on SiO2-Na2O-CaO-P2O5 bioactive glasses. The measured hardness, fracture toughness and fracture surface energy show a linear relation with Young's modulus. It is also interesting to note that the observed results are functions of polymerisation and the number of non-bridging oxygens (NBO) prevailing in the network with change in SiO2 content. The temperature dependence of velocities, attenuation and elastic moduli show the existence of softening in the glass network structure as temperature increases.

Well-Defined Surface Species [(≡Si - O -)W(=O)Me3] Prepared by Direct Methylation of [(≡Si - O -)W(=O)Cl3], a Catalyst for Cycloalkane Metathesis and Transformation of Ethylene to Propylene

KAUST Repository

Hamieh, Ali Imad Ali

2015-04-03

The silica-supported tungsten oxo-trimethyl complex [(≡Si - O -)W(=O)Me3] was synthesized using a novel SOMC synthetic approach. By grafting the inexpensive stable compound WOCl4 on the surface of silica, partially dehydroxylated at 700 °C (SiO2-700), a well-defined monopodal surface complex [(≡Si - O -)W(=O)Cl3] was produced. The supported complex directly methylated with ZnMe2 and transformed into [(≡Si - O -)W(=O)Me3], which we fully characterized by microanalysis, IR, mass balance and SS NMR (1H, 13C, 1H-13C HETCOR, 1H-1H DQ and TQ). [(≡Si - O)W(=O)Me3] has two conformational isomers on the surface at room temperature. The conversion of one to the other was observed at 318 K by variable-temperature 13C CP/MAS and 1H spin echo MAS solid-state NMR; this was also confirmed by NMR and DFT calculations. [(≡Si - O)W(=O)Me3] was found to be active in cyclooctane metathesis and to have a wide distribution range in ring-contracted and ring-expanded products. In addition, [(≡Si - O)W(=O)Me3] proved to be highly active for selective transformation of ethylene to propylene compared to other silica-supported organometallic complexes. (Chemical Equation Presented). © 2015 American Chemical Society.

Well-Defined Surface Species [(≡Si - O -)W(=O)Me3] Prepared by Direct Methylation of [(≡Si - O -)W(=O)Cl3], a Catalyst for Cycloalkane Metathesis and Transformation of Ethylene to Propylene

KAUST Repository

Hamieh, Ali Imad Ali; Chen, Yin; Abdel-Azeim, Safwat; Abou-Hamad, Edy; Goh, Li Min Serena; Samantaray, Manoja; Dey, Raju; Cavallo, Luigi; Basset, Jean-Marie

2015-01-01

The silica-supported tungsten oxo-trimethyl complex [(≡Si - O -)W(=O)Me3] was synthesized using a novel SOMC synthetic approach. By grafting the inexpensive stable compound WOCl4 on the surface of silica, partially dehydroxylated at 700 °C (SiO2-700), a well-defined monopodal surface complex [(≡Si - O -)W(=O)Cl3] was produced. The supported complex directly methylated with ZnMe2 and transformed into [(≡Si - O -)W(=O)Me3], which we fully characterized by microanalysis, IR, mass balance and SS NMR (1H, 13C, 1H-13C HETCOR, 1H-1H DQ and TQ). [(≡Si - O)W(=O)Me3] has two conformational isomers on the surface at room temperature. The conversion of one to the other was observed at 318 K by variable-temperature 13C CP/MAS and 1H spin echo MAS solid-state NMR; this was also confirmed by NMR and DFT calculations. [(≡Si - O)W(=O)Me3] was found to be active in cyclooctane metathesis and to have a wide distribution range in ring-contracted and ring-expanded products. In addition, [(≡Si - O)W(=O)Me3] proved to be highly active for selective transformation of ethylene to propylene compared to other silica-supported organometallic complexes. (Chemical Equation Presented). © 2015 American Chemical Society.

Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si

International Nuclear Information System (INIS)

Horiuchi, Takeshi; Takahashi, Mitsue; Li, Qiu-Hong; Wang, Shouyu; Sakai, Shigeki

2010-01-01

Oxynitrided Si (SiON) surfaces show smaller subthreshold swings than do directly nitrided Si (SiN) surfaces when used in ferroelectric-gate field-effect transistors (FeFETs) having the following stacked-gate structure: Pt/SrBi 2 Ta 2 O 9 (SBT)/HfO 2 /Si. SiON/Si substrates for FeFETs were prepared by rapid thermal oxidation (RTO) in O 2 at 1000 °C and subsequent rapid thermal nitridation (RTN) in NH 3 at various temperatures in the range 950–1150 °C. The electrical properties of the Pt/SBT/HfO 2 /SiON/Si FeFET were compared with those of reference FETs, i.e. Pt/SBT/HfO 2 gate stacks formed on Si substrates subjected to various treatments: SiN x /Si formed by RTN, SiO 2 /Si formed by RTO and untreated Si. The Pt/SBT/HfO 2 /SiON/Si FeFET had a larger memory window than all the other reference FeFETs, particularly at low operation voltages when the RTN temperature was 1050 °C

Effective gene silencing activity of prodrug-type 2'-O-methyldithiomethyl siRNA compared with non-prodrug-type 2'-O-methyl siRNA.

Science.gov (United States)

Hayashi, Junsuke; Nishigaki, Misa; Ochi, Yosuke; Wada, Shun-Ichi; Wada, Fumito; Nakagawa, Osamu; Obika, Satoshi; Harada-Shiba, Mariko; Urata, Hidehito

2018-07-01

Small interfering RNAs (siRNAs) are an active agent to induce gene silencing and they have been studied for becoming a biological and therapeutic tool. Various 2'-O-modified RNAs have been extensively studied to improve the nuclease resistance. However, the 2'-O-modified siRNA activities were often decreased by modification, since the bulky 2'-O-modifications inhibit to form a RNA-induced silencing complex (RISC). We developed novel prodrug-type 2'-O-methyldithiomethyl (MDTM) siRNA, which is converted into natural siRNA in an intracellular reducing environment. Prodrug-type 2'-O-MDTM siRNAs modified at the 5'-end side including 5'-end nucleotide and the seed region of the antisense strand exhibited much stronger gene silencing effect than non-prodrug-type 2'-O-methyl (2'-O-Me) siRNAs. Furthermore, the resistances for nuclease digestion of siRNAs were actually enhanced by 2'-O-MDTM modifications. Our results indicate that 2'-O-MDTM modifications improve the stability of siRNA in serum and they are able to be introduced at any positions of siRNA. Copyright © 2018 Elsevier Ltd. All rights reserved.

Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy

Science.gov (United States)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Zhang, Dongliang; Gu, Ziyue; Qian, Ru; Cao, Duo; Yu, Yuehui

2018-01-01

The influence of lanthanum silicate (LaSiOx) passivation interlayer on the band alignment between plasma enhanced atomic layer deposition (PEALD)-Al2O3 films and 4H-SiC was investigated by high resolution X-ray photoelectron spectroscopy (XPS). An ultrathin in situ LaSiOx interfacial passivation layer (IPL) was introduced between the Al2O3 gate dielectric and the 4H-SiC substrate to enhance the interfacial characteristics. The valence band offset (VBO) and corresponding conduction band offset (CBO) for the Al2O3/4H-SiC interface without any passivation were extracted to be 2.16 eV and 1.49 eV, respectively. With a LaSiOx IPL, a VBO of 1.79 eV and a CBO of 1.86 eV could be obtained across the Al2O3/4H-SiC interface. The difference in the band alignments was dominated by the band bending or band shift in the 4H-SiC substrate as a result of different interfacial layers (ILs) formed at the interface. This understanding of the physical details of the band alignment could be a good foundation for Al2O3/LaSiOx/4H-SiC heterojunctions applied in the 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

Vancomycin-modified Fe3O4@SiO2@Ag microflowers as effective antimicrobial agents

Directory of Open Access Journals (Sweden)

Wang C

2017-04-01

Full Text Available Chongwen Wang,1,2,* Kehan Zhang,2,* Zhe Zhou,2,* Qingjun Li,2 Liting Shao,2 Rong Zhang Hao,3 Rui Xiao,2 Shengqi Wang1,2 1College of Life Sciences & Bio-Engineering, Beijing University of Technology, 2Beijing Key Laboratory of New Molecular Diagnosis Technologies for Infectious Diseases, Beijing Institute of Radiation Medicine, Beijing, 3Institute for Disease Control and Prevention, Academy of Military Medical Sciences, Beijing, People’s Republic of China *These authors contributed equally to this work Abstract: Nanomaterials combined with antibiotics exhibit synergistic effects and have gained increasing interest as promising antimicrobial agents. In this study, vancomycin-modified magnetic-based silver microflowers (Van/Fe3O4@SiO2@Ag microflowers were rationally designed and prepared to achieve strong bactericidal ability, a wide antimicrobial spectrum, and good recyclability. High-performance Fe3O4@SiO2@Ag microflowers served as a multifunction-supporting matrix and exhibited sufficient magnetic response property due to their 200 nm Fe3O4 core. The microflowers also possessed a highly branched flower-like Ag shell that provided a large surface area for effective Ag ion release and bacterial contact. The modified-vancomycin layer was effectively bound to the cell wall of bacteria to increase the permeability of the cell membrane and facilitate the entry of the Ag ions into the bacterium, resulting in cell death. As such, the fabricated Van/Fe3O4@SiO2@Ag microflowers were predicted to be an effective and environment-friendly antibacterial agent. This hypothesis was verified through sterilization of Gram-negative Escherichia coli and Gram-positive methicillin-resistant Staphylococcus aureus, with minimum inhibitory concentrations of 10 and 20 µg mL-1, respectively. The microflowers also showed enhanced effect compared with bare Fe3O4@SiO2@Ag microflowers and free-form vancomycin, confirming the synergistic effects of the combination of the

Low-temperature conducting channel switching in hybrid Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si structures

Energy Technology Data Exchange (ETDEWEB)

Vikulov, V.A., E-mail: vikulov@iacp.dvo.ru [Institute of Automation and Control Processes, FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Dimitriev, A.A.; Balashev, V.V.; Pisarenko, T.A.; Korobtsov, V.V. [Institute of Automation and Control Processes, FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

2016-09-15

Highlights: • Conducting channel switching between the polycrystalline Fe{sub 3}O{sub 4} film and the n-Si substrate takes place in the Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si structure at temperature below 125 K. • This effect occurs via the field-assisted tunneling through the composite insulating layer that consists of the highly resistive Fe{sub 3}O{sub 4} and the tunnel SiO{sub 2}. • The switching is attended by a change in the shape of the current-voltage characteristics from the linear at 300 K to the S-type at 80 K. - Abstract: The carrier transport properties of the polycrystalline magnetite (Fe{sub 3}O{sub 4}) films grown on an n-type Si substrate with 5 nm-thick SiO{sub 2} have been investigated between 80 and 300 K in current-in-plane geometry. It was established that at temperature decrease to about 120 K, the resistivity of thin Fe{sub 3}O{sub 4} films increases up to a peak value and then abruptly drops. This process is attended by a change in the shape of the current-voltage characteristics from the linear at 300 K to the S-type at 80 K. The observed peculiarities are explained by conducting channel switching from the Fe{sub 3}O{sub 4} film to the Si substrate via the field-assisted tunneling of carriers through the composite insulating layer consisting of highly resistive Fe{sub 3}O{sub 4} and tunnel SiO{sub 2}.

Viscosity of SiO2-"FeO"-Al2O3 System in Equilibrium with Metallic Fe

Science.gov (United States)

Chen, Mao; Raghunath, Sreekanth; Zhao, Baojun

2013-08-01

The present study delivered the measurements of viscosities in SiO2-"FeO"-Al2O3 system in equilibrium with metallic Fe. The rotational spindle technique was used in the measurements at the temperature range of 1473 K to 1773 K (1200 °C to 1500 °C). Molybdenum crucibles and spindles were employed in all measurements. The Fe saturation condition was maintained by an iron plate placed at the bottom of the crucible. The equilibrium compositions of the slags were measured by EPMA after the viscosity measurements. The effect of up to 20 mol. pct Al2O3 on the viscosity of the SiO2-"FeO" slag was investigated. The "charge compensation effect" of the Al2O3 and FeO association has been discussed. The modified quasi-chemical viscosity model has been optimized in the SiO2-"FeO"-Al2O3 system in equilibrium with metallic Fe to describe the viscosity measurements of the present study.

Orientation-dependent chemistry and band-bending of Ti on polar ZnO surfaces.

Science.gov (United States)

Borghetti, Patrizia; Mouchaal, Younes; Dai, Zongbei; Cabailh, Gregory; Chenot, Stéphane; Lazzari, Rémi; Jupille, Jacques

2017-04-19

Orientation-dependent reactivity and band-bending are evidenced upon Ti deposition (1-10 Å) on polar ZnO(0001)-Zn and ZnO(0001[combining macron])-O surfaces. At the onset of the Ti deposition, a downward band-bending was observed on ZnO(0001[combining macron])-O while no change occurred on ZnO(0001)-Zn. Combining this with the photoemission analysis of the Ti 2p core level and Zn L 3 (L 2 )M 45 M 45 Auger transition, it is established that the Ti/ZnO reaction is of the form Ti + 2ZnO → TiO 2 + 2Zn on ZnO(0001)-Zn and Ti + yZnO → TiZn x O y + (y - x)Zn on ZnO(0001[combining macron])-O. Consistently, upon annealing thicker Ti adlayers, the metallic zinc is removed to leave ZnO(0001)-Zn surfaces covered with a TiO 2 -like phase and ZnO(0001[combining macron])-O surfaces covered with a defined (Ti, Zn, O) compound. Finally, a difference in the activation temperature between the O-terminated (500 K) and Zn-terminated (700 K) surfaces is observed, which is tentatively explained by different electric fields in the space charge layer at ZnO surfaces.

Atomistic simulation of the thermal conductivity in amorphous SiO2 matrix/Ge nanocrystal composites

Science.gov (United States)

Kuryliuk, Vasyl V.; Korotchenkov, Oleg A.

2017-04-01

We use nonequilibrium molecular dynamics computer simulations with the Tersoff potential aiming to provide a comprehensive picture of the thermal conductivity of amorphous SiO2 (a-SiO2) matrix with embedded Ge nanocrystals (nc-Ge). The modelling predicts the a-SiO2 matrix thermal conductivity in a temperature range of 50 fair agreement with experiment at around room temperature. It is worth noticing that the predicted room-temperature thermal conductivity in a-SiO2 is in very good agreement with the experimental result, which is in marked contrast with the thermal conductivity calculated employing the widely used van Beest-Kramer-van Santen (BKS) potential. We show that the thermal conductivity of composite nc-Ge/a-SiO2 systems decreases steadily with increasing the volume fraction of Ge inclusions, indicative of enhanced interface scattering of phonons imposed by embedded Ge nanocrystals. We also observe that increasing the volume fractions above a certain threshold value results in a progressively increased thermal conductivity of the nanocomposite, which can be explained by increasing volume fraction of a better thermally conducting Ge. Finally, non-equilibrium molecular dynamics simulations with the Tersoff potential are promising for computing the thermal conductivity of nanocomposites based on amorphous SiO2 and can be readily scaled to more complex composite structures with embedded nanoparticles, which thus help design nanocomposites with desired thermal properties.

First investigations on the quaternary system Na2O-K2O-CaO-SiO2: synthesis and crystal structure of the mixed alkali calcium silicate K1.08Na0.92Ca6Si4O15

Science.gov (United States)

Kahlenberg, Volker; Mayerl, Michael Jean-Philippe; Schmidmair, Daniela; Krüger, Hannes; Tribus, Martina

2018-04-01

In the course of an exploratory study on the quaternary system Na2O-K2O-CaO-SiO2 single crystals of the first anhydrous sodium potassium calcium silicate have been obtained from slow cooling of a melt in the range between 1250 and 1050 °C. Electron probe micro analysis suggested the following idealized molar ratios of the oxides for the novel compound: K2O:Na2O:CaO:SiO2 = 1:1:12:8 (or KNaCa6Si4O15). Single-crystal diffraction measurements on a crystal with chemical composition K1.08Na0.92Ca6Si4O15 resulted in the following basic crystallographic data: monoclinic symmetry, space group P 21/ c, a = 8.9618(9) Å, b = 7.3594(6) Å, c = 11.2453(11) Å, β= 107.54(1)°, V = 707.2(1) Å3, Z = 2. Structure solution was performed using direct methods. The final least-squares refinement converged at a residual of R(|F|) = 0.0346 for 1288 independent reflections and 125 parameters. From a structural point of view, K1.08Na0.92Ca6Si4O15 belongs to the group of mixed-anion silicates containing [Si2O7]- and [SiO4]-units in the ratio 1:2. The mono- and divalent cations occupy a total of four crystallographically independent positions located in voids between the tetrahedra. Three of these sites are exclusively occupied by calcium. The fourth site is occupied by 54(1)% K and 46%(1) Na, respectively. Alternatively, the structure can be described as a heteropolyhedral framework based on corner-sharing silicate tetrahedra and [CaO6]-octahedra. The network can build up from kröhnkite-like [Ca(SiO4)2O2]-chains running along [001]. A detailed comparison with other A2B6Si4O15-compounds including topological and group-theoretical aspects is presented.

Obtenção de substratos cerâmicos no sistema Si-Al-O-N-C empregando polissiloxanos e carga de Si e Al2O3 Ceramic tapes of Si-Al-O-N-C compounds using mixtures of polyssiloxane and Si-Al2O3 fillers

Directory of Open Access Journals (Sweden)

R. M. Rocha

2005-03-01

Full Text Available A técnica de processamento de colagem por fita (tape casting tem sido amplamente utilizada na obtenção de cerâmicas para diferentes aplicações: substratos cerâmicos e estruturas planares em multicamadas para circuitos integrados e capacitores; eletrólitos sólidos para células a combustível e sensores; cerâmicas piezoelétricas para atuadores e transdutores; membranas de separação para micro-filtragem; compósitos estruturais e trocadores de calor. Neste trabalho, a técnica convencional de colagem por fita foi adaptada com a utilização do processo de pirólise controlada de misturas de polímeros e carga, empregando-se polissiloxanos e cargas de silício e alumina nas suspensões. Foram preparadas suspensões com 60% vol. de fase polimérica (polissiloxanos e metil-trietoxi-silano e 40% vol. de carga (Si e Al2O3, com diferentes concentrações dos polímeros e das cargas. As amostras na forma de substratos foram pirolisadas em atmosfera de nitrogênio a 1400 °C/2 h e 1500 °C/2 h, sendo convertidas em materiais cerâmicos no sistema Si-Al-O-N-C. O processo de pirólise foi caracterizado até a temperatura de 1000 ºC por análise termogravimétrica. As cerâmicas foram caracterizadas quanto às fases formadas, microestrutura, massa específica aparente e condutividade térmica. Os substratos cerâmicos apresentaram porosidade relativamente alta (entre 12 e 22% e baixa condutividade térmica (entre 3 e 8 W/m.K, sendo constituídos por fases cristalinas de beta-SiC, Si2ON2, O'-SiAlON, Al2O3, mulita e fase amorfa de SiOC; o Si foi observado nas amostras pirolisadas a 1400 ºC.The tape casting technique has been widely used to prepare ceramic tapes for different applications: ceramic substrates and multilayer planar structures for integrated circuits and capacitors, solid electrolytes for fuel cells and sensors, piezoelectric ceramics for actuators and transducers, membrane systems for micro-filtration, structural composites and

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

Science.gov (United States)

Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

2009-04-22

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

Vibrational spectroscopic study of poldervaartite CaCa[SiO3(OH)(OH)

Science.gov (United States)

Frost, Ray L.; López, Andrés; Scholz, Ricardo; Lima, Rosa Malena Fernandes

2015-02-01

We have studied the mineral poldervaartite CaCa[SiO3(OH)(OH)] which forms a series with its manganese analogue olmiite CaMn[SiO3(OH)](OH) using a range of techniques including scanning electron microscopy, thermogravimetric analysis, Raman and infrared spectroscopy. Chemical analysis shows the mineral is reasonably pure and contains only calcium and manganese with low amounts of Al and F. Thermogravimetric analysis proves the mineral decomposes at 485 °C with a mass loss of 7.6% compared with the theoretical mass loss of 7.7%. A strong Raman band at 852 cm-1 is assigned to the SiO stretching vibration of the SiO3(OH) units. Two Raman bands at 914 and 953 cm-1 are attributed to the antisymmetric vibrations. Intense prominent peaks observed at 3487, 3502, 3509, 3521 and 3547 cm-1 are assigned to the OH stretching vibration of the SiO3(OH) units. The observation of multiple OH bands supports the concept of the non-equivalence of the OH units. Vibrational spectroscopy enables a detailed assessment of the molecular structure of poldervaartite.

Synthesis of SiO(x) powder using DC arc plasma.

Science.gov (United States)

Jung, Chan-Ok; Park, Dong-Wha

2013-02-01

SiO(x) was prepared by DC arc plasma and applied to the anode material of lithium ion batteries. A pellet of a mixture of Si and SiO2 was used as the raw material. The ratios of the silicon and silicon dioxide (SiO2) mixtures were varied by controlling the Si-SiO2 molar ratio (Si-SiO2 = 1-4). Hydrogen gas was used as the reduction atmosphere in the chamber. The prepared SiO(x) was collected on the chamber wall. The obtained SiO(x) was characterized by X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). XRD and TEM showed that the phase composition of the prepared particles was composed of amorphous SiO(x) and crystalline Si. The prepared SiO(x) showed wire and spherical morphology. XPS indicated the bonding state and 'x' value of the prepared SiO(x), which was close to one. The result of prepared SiO(x) is discussed from thermodynamic equilibrium calculations. The electrochemical behavior of the silicon monoxide anode was investigated.

Vitreous Anorthite (CaAl2Si2O8) at High Pressure: A First-Principles Molecular Dynamics Study

Science.gov (United States)

Ghosh, D. B.; Karki, B. B.

2017-12-01

Due to the high abundance of silicates and aluminosilicates inside the earth, their corresponding melts are likely to be one of the key transport agents in the chemical and thermal evolution of our planet and therefore, have long been the subject of investigations. Experimentally, in-situ melt properties of these materials, particularly at high pressure-temperature conditions are extremely difficult to constrain and the corresponding glass phases are considered as analogs. This, however, prohibits one-to-one comparison between the properties of silicate melt and its corresponding glass. With the aim to enable such comparison, we investigate the equation of state and structural properties of CaAl2Si2O8 glass at 300 K as a function of pressure up to 160 GPa from first principles molecular dynamics simulation results. Our results show that at ambient pressure: (i) Si's remain mostly (> 95%) under tetrahedral oxygen surroundings, (ii) unlike anorthite crystal, presence of high coordination (> 4) Al's with 30% abundance, (iii) and significant presence of both non bridging (8%) and triply (17%) coordinated oxygen. In the 0-10 GPa interval, mainly topological changes occur in the Si-O (also Al-O to some extent) surroundings in the cold compressed case in comparison to smooth increase in the average bond distance and coordination in the hot compressed case. Further compression results in gradual increases in: mean coordination, proportion of O-triclusters and increasing appearance of tetrahedral oxgyens, with Si-O (Al-O) reaching 6 (6.5) and O-T > 3 (T=Si and Al) at the highest compression. Due to the absence of kinetic barrier, the hot compressed glasses consistently produce greater densities and higher coordination numbers than the cold compression cases. Decompressed glasses show irreversible compaction along with retention of high coordination species when decompressed from > 10 GPa and degree of irreversibility depends on the peak pressure of decompression. These

Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

2017-02-15

Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

Viscosity and Structure of CaO-SiO2-P2O5-FetO System with Varying P2O5 and FeO Content

Science.gov (United States)

Diao, Jiang; Gu, Pan; Liu, De-Man; Jiang, Lu; Wang, Cong; Xie, Bing

2017-10-01

A rotary viscosimeter and Raman spectrum were employed to measure the viscosity and structural information of the CaO-SiO2-P2O5-FetO system at 1673 K. The experimental data have been compared with the calculated results using different viscosity models. It shows that the National Physical Laboratory (NPL) and Pal models fit the CaO-SiO2-P2O5-FeOt system better. With the P2O5 content increasing from 5% to 14%, the viscosity increases from 0.12 Pa s to 0.27 Pa s. With the FeO content increasing from 30% to 40%, the viscosity decreases from 0.21 Pa s to 0.12 Pa s. Increasing FeO content makes the complicated molten melts become simple, and increasing P2O5 content will complicate the molten melts. The linear relation between viscosity and structure parameter Q(Si + P) was obtained by regression analysis. The calculated viscosity by using the optimized NPL and Pal model are almost identical with the fitted values.

Crystallization behavior of (1 - x)Li2O.xNa2O.Al2O3.4SiO2 glasses

International Nuclear Information System (INIS)

Wang, Moo-Chin; Cheng, Chih-Wei; Chang, Kuo-Ming; Hsi, Chi-Shiung

2010-01-01

The crystallization behavior of the (1 - x)Li 2 O.xNa 2 O.Al 2 O 3 .4SiO 2 glasses has been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), electron diffraction (ED) and energy dispersive spectroscopy (EDS). The crystalline phase was composed of β-spodumene. The isothermal crystallization kinetics of β-spodumene from the (1 - x)Li 2 O.xNa 2 O.Al 2 O 3 .4SiO 2 glasses has also been studied by a quantitative X-ray diffraction method. The activation energy of β-spodumene formation decreases from 359.2 to 317.8 kJ/mol when the Na 2 O content increases from 0 to 0.4 mol and it increases from 317.8 to 376.9 kJ/mol when the Na 2 O content increases from 0.4 to 0.6 mol. The surface nucleation and plate-like growth were dominant in the crystallization of the (1 - x)Li 2 O.xNa 2 O.Al 2 O 3 .4SiO 2 glasses.

Crack-resistant Al2O3–SiO2 glasses

Science.gov (United States)

Rosales-Sosa, Gustavo A.; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

2016-01-01

Obtaining “hard” and “crack-resistant” glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3–(100–x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3–SiO2 glasses. In particular, the composition of 60Al2O3•40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses. PMID:27053006

Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO2 on SiO2/Si

International Nuclear Information System (INIS)

Jia, Q.X.; Arendt, P.; Groves, J.R.; Fan, Y.; Roper, J.M.; Foltyn, S.R.

1998-01-01

Highly conductive biaxially textured RuO 2 thin films were deposited on technically important SiO 2 /Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO 2 on SiO 2 /Si. The biaxially oriented RuO 2 had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba 0.5 Sr 0.5 TiO 3 thin films on RuO 2 /IBAD-YSZ/SiO 2 /Si. The Ba 0.5 Sr 0.5 TiO 3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society

Assembly of Fe3O4 nanoparticles on SiO2 monodisperse spheres

Indian Academy of Sciences (India)

Assembly of Fe3O4 nanoparticles on SiO2 monodisperse spheres. K C BARICK and D BAHADUR*. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay,. Mumbai 400 076, India. Abstract. The assembly of superparamagnetic Fe3O4 nanoparticles on submicroscopic SiO2 ...

H2O incorporation in the phosphorene/a-SiO2 interface: a first-principles study.

Science.gov (United States)

Scopel, Wanderlã L; Souza, Everson S; Miwa, R H

2017-02-22

Based on first-principles calculations, we investigate (i) the energetic stability and electronic properties of single-layer phosphorene (SLP) adsorbed on an amorphous SiO 2 surface (SLP/a-SiO 2 ), and (ii) the further incorporation of water molecules at the phosphorene/a-SiO 2 interface. In (i), we find that the phosphorene sheet binds to a-SiO 2 through van der Waals interactions, even in the presence of oxygen vacancies on the surface. The SLP/a-SiO 2 system presents a type-I band alignment, with the valence (conduction) band maximum (minimum) of the phosphorene lying within the energy gap of the a-SiO 2 substrate. The structure and the surface-potential corrugations promote the formation of electron-rich and electron-poor regions on the phosphorene sheet and at the SLP/a-SiO 2 interface. Such charge density puddles are strengthened by the presence of oxygen vacancies in a-SiO 2 . In (ii), because of the amorphous structure of the surface, we consider a number of plausible geometries for H 2 O embedded in the SLP/a-SiO 2 interface. There is an energetic preference for the formation of hydroxyl (OH) groups on the a-SiO 2 surface. Meanwhile, in the presence of oxygenated water or interstitial oxygen in the phosphorene sheet, we observe the formation of metastable OH bonded to the phosphorene, and the formation of energetically stable P-O-Si chemical bonds at the SLP/a-SiO 2 interface. Further x-ray absorption spectra simulations are performed, which aim to provide additional structural/electronic information on the oxygen atoms forming hydroxyl groups or P-O-Si chemical bonds at the interface region.

Association behaviour of 241Am(III) on SiO2(amorphous) and SiO2(quartz) colloids

International Nuclear Information System (INIS)

Degueldre, C.; Wernli, B.

1993-01-01

SiO 2 colloids have been identified as a potential vector for enhancing radionuclide transport in granitic groundwater and in concrete pore water. The sorption behaviour of 241 Am(III) on SiO 2 colloids was studied as a function of americium concentration pH (5-12), colloid concentration, ionic strength, temperature and SiO 2 allotropic species. The Am(III) sorption mechanism on amorphous silica is different from that on quartz. For SiO 2(amorphous) solution, the variation of log K p (ml g -1 ) with pH is linear (pH=5-9) with a slope of +1 indicating a one proton exchange mechanism. The colloid concentration (ppm) affects the sorption and log K p 3.7-0.67 log [SiO 2 ] (pH = 6). K p increases insignificantly when the ionic strength decreases. It shows no significant variation, however, with the Am concentration. On amorphous silica, the Am(III) sorption is driven by proton exchange from the silanol groups. For SiO 2 (quartz), log K p is constant over a large range of quartz concentration in suspension and the variation of log K p with pH is about linear (pH = 5-12), with a slope of 0.28, indicating a more complex exchange mechanism. Reactions taking into account the interaction of positive Am(OH) w (3-w)+ species on to the negatively charged quartz surface are suggested. (author)

Integrated nanophotonic hubs based on ZnO-Tb(OH3/SiO2 nanocomposites

Directory of Open Access Journals (Sweden)

Lin Yu

2011-01-01

Full Text Available Abstract Optical integration is essential for practical application, but it remains unexplored for nanoscale devices. A newly designed nanocomposite based on ZnO semiconductor nanowires and Tb(OH3/SiO2 core/shell nanospheres has been synthesized and studied. The unique sea urchin-type morphology, bright and sharply visible emission bands of lanthanide, and large aspect ratio of ZnO crystalline nanotips make this novel composite an excellent signal receiver, waveguide, and emitter. The multifunctional composite of ZnO nanotips and Tb(OH3/SiO2 nanoparticles therefore can serve as an integrated nanophotonics hub. Moreover, the composite of ZnO nanotips deposited on a Tb(OH3/SiO2 photonic crystal can act as a directional light fountain, in which the confined radiation from Tb ions inside the photonic crystal can be well guided and escape through the ZnO nanotips. Therefore, the output emission arising from Tb ions is truly directional, and its intensity can be greatly enhanced. With highly enhanced lasing emissions in ZnO-Tb(OH3/SiO2 as well as SnO2-Tb(OH3/SiO2 nanocomposites, we demonstrate that our approach is extremely beneficial for the creation of low threshold and high-power nanolaser.

PbO-SiO_2-CuO及びPbO-SiO_2-K_2O-Na_2O-CuO系ガラス中のCu^<2+>イオンの光吸収スペクトル及びガラスの屈折率

OpenAIRE

小山田, 了三; 古賀, 秀人; 星野, 朝則

1984-01-01

PbO-SiO2-CuO及びPbO-SiO2-K2O-Na2O-CuO系ガラス中のCu2+イオンの光吸収スペクトルを測定し、ガラス組成と吸収ピーク波数との関係を調べた。その結果、PbO-SiO2-CuO系ガラス中のCu2+の吸収ピーク波数は[PbO]/[SiO2]比の増加とともに高波数側へシフトすることが分かった。PbO-SiO2-K2O-Na2O-CuO系ガラス中のCu2+の吸収ピーク波数の混合アルカリ効果は[PbO]/[SiO2]比により現れ方が異なる。[PbO]/[SiO2]=0.64の場合、ピーク波数は[K2O]/[K2O+Na2O]比の増加とともに低波数側へシフトする。[PbO]/[SiO2]=1.0の場合もピーク波数は[K2O]/[K2O+Na2O]比の増加とともに低波数側へシフトし、[K2O]/[K2O+Na2O]=0.7付近に極小が存在する。[PbO]/[SiO2]=1.5の場合、極小が[K2O]/[K2O+Na2O]=0.35付近に存在し、このとき混合アルカリ効果が最も顕著に現れる。次に、PbO-SiO2-K2O-Na2O-CuO系ガラスの組成と屈折率の関係を調...

Effects of SiO2 encapsulation and laser processing on single CdTe/ZnTe quantum dots grown on Si (001) substrates

International Nuclear Information System (INIS)

Lee, Hong Seok; Rastelli, Armando; Schmidt, Oliver G.; Kim, Tae Whan; Lee, In Won

2011-01-01

Micro-photoluminescence (μ-PL) measurements are carried out to investigate the effects of SiO 2 encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the μ-PL peak shift for the 200-nm SiO 2 capped single QD is larger than that of the as-grown sample. The large μ-PL peak shift in the 200-nm SiO 2 capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO 2 encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.

One step process of decomposition and polymerization to fabricate SiO_2 hollow spheres/polyimide composite for foldable OLEDs

International Nuclear Information System (INIS)

Kim, Min Kyu; Kim, Dong Won; Moon, Soo Hyun; Shin, Dong-Wook; Oh, Tae Sik; Yoo, Ji Beom

2017-01-01

Graphical abstract: The SiO_2 hollow spheres and polyimide hybrid synthesized using one step process, simultaneous occurrence of decomposition and polymerization (SODP) is useful with a ultra-low dielectric constant and high thermal stability for flexible OLED. - Highlights: • We fabricated hybrid films of SHS/PI by using a one step process with SODP. • The film has ultralow dielectric constant (50 vol% at k = 1.67). • There is no collapse of SiO_2 hollow spheres in the PI matrix after bending test for 50,000 cycles. - Abstract: The fabrication of interlayer dielectrics (ILDs) in flexible organic light-emitting diodes (OLEDs) requires flexible materials with a low dielectric constant as well as materials with excellent electrical, thermal, and mechanical properties for optimal device performance. Hybrid films of SiO_2 hollow spheres (SHS)/polyimide (PI) were prepared using a one-step process, with simultaneous occurrence of decomposition (polystyrene, PS) and polymerization (PI) (SODP). No collapse of SiO_2 hollow spheres in PI was observed from 10 vol% to 60 vol% SHS in hybrid films. The dielectric constant of hybrid films was reduced from 3.45 to 1.67 and was saturated at above 50 vol% of SHS due to the maximum fill factor of SHS in the PI matrix. The thermal stability was excellent up to 500 °C due to the inherent thermal property of PI. After a bending test for 50,000 cycles at a bending radius of 1 mm, the SHS/PI hybrid films retained their dielectric constant and current density. These results indicate the hybrid film to be the most promising candidate for flexible ILDs with a low dielectric constant and high thermal stability for foldable OLEDs.

Extended defects in epitaxial Sc2O3 films grown on (111) Si

International Nuclear Information System (INIS)

Klenov, Dmitri O.; Edge, Lisa F.; Schlom, Darrell G.; Stemmer, Susanne

2005-01-01

Epitaxial Sc 2 O 3 films with the cubic bixbyite structure were grown on (111) Si by reactive molecular beam epitaxy. High-resolution transmission electron microscopy (HRTEM) revealed an abrupt, reaction-layer free interface between Sc 2 O 3 and Si. The ∼10% lattice mismatch between Si and Sc 2 O 3 was relieved by the formation of a hexagonal misfit dislocation network with Burgers vectors of 1/2 Si and line directions parallel to Si . A high density of planar defects and threading dislocations was observed. Analysis of lattice shifts across the planar defects in HRTEM showed that these faults were likely antiphase boundaries (APBs). ABPs form when film islands coalesce during growth because films nucleate with no unique arrangement of the ordered oxygen vacancies in the bixbyite structure relative to the Si lattice

Effects of atomic hydrogen on the selective area growth of Si and Si1-xGex thin films on Si and SiO2 surfaces: Inhibition, nucleation, and growth

International Nuclear Information System (INIS)

Schroeder, T.W.; Lam, A.M.; Ma, P.F.; Engstrom, J.R.

2004-01-01

Supersonic molecular beam techniques have been used to study the nucleation of Si and Si 1-x Ge x thin films on Si and SiO 2 surfaces, where Si 2 H 6 and GeH 4 have been used as sources. A particular emphasis of this study has been an examination of the effects of a coincident flux of atomic hydrogen. The time associated with formation of stable islands of Si or Si 1-x Ge x on SiO 2 surfaces--the incubation time--has been found to depend strongly on the kinetic energy of the incident molecular precursors (Si 2 H 6 and GeH 4 ) and the substrate temperature. After coalescence, thin film morphology has been found to depend primarily on substrate temperature, with smoother films being grown at substrate temperatures below 600 deg. C. Introduction of a coincident flux of atomic hydrogen has a large effect on the nucleation and growth process. First, the incubation time in the presence of atomic hydrogen has been found to increase, especially at substrate temperatures below 630 deg. C, suggesting that hydrogen atoms adsorbed on Si-like sites on SiO 2 can effectively block nucleation of Si. Unfortunately, in terms of promoting selective area growth, coincident atomic hydrogen also decreases the rate of epitaxial growth rate, essentially offsetting any increase in the incubation time for growth on SiO 2 . Concerning Si 1-x Ge x growth, the introduction of GeH 4 produces substantial changes in both thin film morphology and the rate nucleation of poly-Si 1-x Ge x on SiO 2 . Briefly, the addition of Ge increases the incubation time, while it lessens the effect of coincident hydrogen on the incubation time. Finally, a comparison of the maximum island density, the time to reach this density, and the steady-state polycrystalline growth rate strongly suggests that all thin films [Si, Si 1-x Ge x , both with and without H(g)] nucleate at special sites on the SiO 2 surface, and grow primarily via direct deposition of adatoms on pre-existing islands

Dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 system

Directory of Open Access Journals (Sweden)

Yixiang Chen

2011-09-01

Full Text Available The dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 (YAS system has been investigated by melting experiment. Transparent YAS glasses have been prepared under the condition of furnace cooling instead of quenching. It is found that, in the YAS ternary phase diagram, the compositions on the Y3Al5O12–SiO2 line and with 52-68 mol% SiO2 have a higher glass-forming ability to produce pure glass. For the compositions with too much or less SiO2 or with Y/Al = 5/3, 1/1, or 1/3, crystallization occurs with the formation of Y3Al5O12, Y2Si2O7, Al6Si2O13, or SiO2. The densities of the YAS glasses increase with decreasing SiO2 contents and increasing Y/Al ratios, and for the samples with Y/Al = 3/5 there is a good linear relationship between the density and SiO2 content.

Natural CaO-TiO2-SiO2 based ceramics

Directory of Open Access Journals (Sweden)

Jelena Pantić

2011-06-01

Full Text Available Lešnica river deposits consist of a large number of minerals of different grain sizes including sphene. Since it is very difficult to obtain pure monophase titanite by different synthetic routes (sol-gel, coprecipitation, combustion, spray pyrolysis and hydrothermal method, the aim of this work was to study the structure of the sphene from the Lešnica river deposits and possibility of using it as a natural precursor for CaO-TiO2-SiO2 based ceramics. The sphene from Lešnica was analyzed by different methods: tristimulus colorimetry, infrared spectroscopy, electron microprobe and X-ray single crystal diffraction. It was confirmed that Al, Fe, Mn and P are present in the sphene structure and proposed that corresponding structural formula could be: (Ca2+1.008 Mn2+0.0021.010(Ti4+0.901 Fe3+0.033 Al3+0.060 P5+0.0010.995 Si4+1.024 O2-5.

Core–shell structured FeSiAl/SiO{sub 2} particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} soft magnetic composite cores with tunable insulating layer thicknesses

Energy Technology Data Exchange (ETDEWEB)

Fan, Xi’an, E-mail: groupfxa@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Wang, Jian, E-mail: snove418562@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Wu, Zhaoyang, E-mail: wustwuzhaoyang@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Li, Guangqiang, E-mail: ligq-wust@mail.wust.edu.cn [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China)

2015-11-15

Graphical abstract: - Highlights: • FeSiAl/SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores were prepared. • SiO{sub 2} surrounding FeSiAl were replaced by Al{sub 2}O{sub 3} during sintering process. • Fe{sub 3}Si particles were separated by Al{sub 2}O{sub 3} with tunable thickness in composite cores. • Fe{sub 3}Si/Al{sub 2}O{sub 3} had lower core loss and better frequency stability than FeSiAl core. • The insulating layer between ferromagnetic particles can reduce core loss. - Abstract: FeSiAl/SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores with tunable insulating layer thicknesses have been synthesized via a modified Stöber method combined with following high temperature sintering process. Most of the conductive FeSiAl particles could be coated by insulating SiO{sub 2} using the modified Stöber method. During the sintering process, the reaction 4Al + 3SiO{sub 2} ≣ 2α-Al{sub 2}O{sub 3} + 3Si took place and the new Fe{sub 3}Si/Al{sub 2}O{sub 3} composite was formed. The Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores displayed more excellent soft magnetic properties, better frequency stability at high frequencies, much higher resistivity and lower core loss than the raw FeSiAl core. Based on this, several types of FeSiAl/SiO{sub 2} particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores with tunable insulating layer thicknesses were selectively prepared by simply varying TEOS contents. The thickness of Al{sub 2}O{sub 3} insulating layer and resistivity of Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores increased with increasing the TEOS contents, while the permeability and core loss changed in the opposite direction.

O (descuidado de si do profissional de enfermagem

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Maria Aparecida Baggio

2008-12-01

Full Text Available Este é um estudo exploratório descritivo de abordagem qualitativa que objetivou compreender o significado do (descuidado de si dos profissionais de enfermagem. Os sujeitos selecionados são auxiliares e técnicos de enfermagem e enfermeiros atuantes em rede pública e particular de saúde. Os dados foram coletados por meio de entrevista estruturada para a caracterização dos sujeitos e entrevista semi-estruturada para conhecer os posicionamentos individuais sobre o tema em questão. O registro dos dados foi audiogravado, sendo os mesmos, posteriormente, transcritos, conferidos e submetidos à análise. Assim, o trabalho foi dividido em categorias e subcategorias que se configuraram em capítulos. Num primeiro momento analiso o significado do cuidado do outro, e procuro demonstrar, nas atitudes do profissional, o cuidado verbal e não-verbal imbuído de empatia, a sensibilidade com a dor do outro e, ainda, o envolvimento com o cliente como atitude terapêutica. Num momento posterior, busco trazer o significado do (descuidado de si, que compreende os aspectos sócio-educativo-cultural, atenção e convivência com a família e amigos, valorização da interioridade do eu. A atenção aos aspectos físicos e estéticos foi mencionada como cuidado de si e, o inverso, foi lembrado como descuidado. O fator tempo foi ressaltado como um grande problema ao descuido de si, a alimentação não contempla o equilíbrio e a atenção que merece, o profissional faz uso constante da automedicação e o trabalho influencia para o não cuidado de si. Na seqüência, trato do (descuidado de si enquanto cuida do outro que confirma a negligência do profissional de enfermagem ao cuidado de si enquanto cuida do outro. E, na última parte deste trabalho, procuro discorrer sobre a enfermagem e suas relações na construção do profissional ressaltando a conjugação e a interdependência do trabalho em enfermagem e a vida pessoal dos sujeitos. Nesta relação

Improvement in performance of Si-based thin film solar cells with a nanocrystalline SiO{sub 2}–TiO{sub 2} layer

Energy Technology Data Exchange (ETDEWEB)

Lin, Yang-Shih [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China); Lien, Shui-Yang [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, ROC (China); Wuu, Dong-Sing, E-mail: dsw@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China); Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, ROC (China); Huang, Yu-Xuan; Kung, Chung-Yuan [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China)

2014-11-03

In this paper, titanium dioxide (TiO{sub 2}) solution with grain sizes of 1–5 nm is prepared by microwave hydrothermal synthesis, and then mixed with silicon dioxide (SiO{sub 2}) solution to yield different SiO{sub 2}/TiO{sub 2} ratios. The mixed solution is then sol–gel spin-coated on glass as an anti-reflecting and self-cleaning bi-functional layer. The experimental results show that the transmittance is optimized not only by minimizing the reflectance by reflective index matching at the glass/air interface, but also by improving the film/glass interface adhesion. Adding SiO{sub 2} into TiO{sub 2} in a weight ratio of 5 leads to the highest average transmittance of 93.6% which is 3% higher than that of glass. All of the SiO{sub 2}–TiO{sub 2} films exhibit a remarkable inherent hydrophilicity even when not illuminated by ultra-violet light. Using the optimized SiO{sub 2}–TiO{sub 2} film in a hydrogenated amorphous silicon/microcrystalline silicon tandem, solar cell increases its conversion efficiency by 5.2%. Two months of outdoor testing revealed that cells with the SiO{sub 2}–TiO{sub 2} film avoid 1.7% of the degradation loss that is caused by dust and dirt in the environment. - Highlights: • High-transmittance and self-cleaning nano-sized SiO{sub 2}–TiO{sub 2} films are prepared. • Using SiO{sub 2}–TiO{sub 2} film can increase average transmittance from 90.5% (glass) to 93.6%. • The SiO{sub 2}–TiO{sub 2} films have naturally hydrophilicity with water contact angles < 13°. • Cells with the film have a 4.9% higher photocurrent than cells without the film.

Positron annihilation at the Si/SiO2 interface

International Nuclear Information System (INIS)

Leung, T.C.; Weinberg, Z.A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G.W.; Lynn, K.G.

1992-01-01

Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO 2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S int ) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO 2 interface

Study of new CaO-SiO/sub 2/-P/sub 2/O/sub 5/CaF/sub 2/ bioactive ceramic

International Nuclear Information System (INIS)

Shamim, A.; Arif, I.; Siddiqi, S.A.; Shah, W.A.

1997-01-01

A new bioactive glass ceramic having, composition 48CaO-32SiO/sub 2/-16P/sub 2/O/sub 5/-4CaF/sub 2/ has been developed and studied for its physical and biological properties. Like the natural bone in which spastic particles are reinforced by collagen, in the present glass-ceramic, fine grained ceramic particles embedded in a glass matrix. X-ray diffraction analysis reveals wollastonite and oxyfluorapatite as the crystalline part of the glass-ceramic. Scanning electron microscopy of the samples has been carried out to see the grain size and grain distribution. Bending and compressive strength of the glass ceramic have been carried out to measured and found to be 208.60 m.Pa and 788.61 M.Pa respectively. Growth of apatite layer, which is responsible for bonding the broken part of a natural bone, on a bioactive glass-ceramic in a simulated body fluid has been studied. A small rectangular piece of this glass-ceramic has also been implanted successfully in a dog's tibia. (author)

Preparation, characterization and catalytic behavior of hierachically porous CuO/α-Fe2O3/SiO2 composite material for CO and o-DCB oxidation

Institute of Scientific and Technical Information of China (English)

Xiaodong Ma; Xi Feng; Xuan He; Hongwen Guo; Lu Lü

2011-01-01

Hierachically porous (HP) CuO/α-Fe2O3/SiO2 composite material was fabricated by sol-gel method and multi-hydrothermal processes using HP-SiO2 as support.The resulting material was characterized by N2 adsorption-desorption,X-ray diffraction and scanning electron microscopy.The as-prepared CuO/Fe2O3/HP-SiO2 sample,with α-Fe2O3 and CuO nanocrystals,possessed a co-continuous skeleton,through-macroporous and mesoporous structure.Its catalytic behavior for CO and o-DCB oxidation was investigated.The result showed that CuO/Fe2O3/HP-SiO2 catalyst exhibited high catalytic activity for both CO and o-DCB oxidation,indicating its potential application in combined abatement of CO and chlorinated volatile organic compounds.

A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

Science.gov (United States)

Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

2018-01-01

ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

Efecto del peso molecular del ácido poliacrílico y de la relación SiO2/Al2O3 en el vidrio sobre la resistencia mecánica de cementos de polialqueonato vítreo

Directory of Open Access Journals (Sweden)

Méndez, M.

2002-08-01

Full Text Available Glass-polyalkenoate cements are widely used for dental applications. To better understand the processes involved in the formation reactions of this kind of cements and in order to explore their use in orthopedic applications, in the present work a study was carried out to analyze the effect of polyacrylic acid molecular weight and that of the SiO2/Al2O3 ratio in the glass on the compression strength and microstructural characteristics of glass-polyalkenoate cements. The produced samples were subjected to compression tests as well as to scanning electron microscopy (SEM and infrared spectroscopy (FTIR analyses. An initial experimental series considered mean polyacrylic acid molecular weights of 2000, 9700, 15268 and 64000, keeping a constant SiO2/Al2O3 ratio of 2,5. A second experimental series considered SiO2/Al2O3 ratios of 2,1; 1,67; 1,25; 0,95 and 0,8; using polyacrylic acid having a constant molecular weight of 64000. The maximum compression strength (82,5 MPa was achieved for a polyacrylic acid molecular weight of 64000 and a SiO2/Al2O3 ratio equal to 1. These compression strength values for glass-polyalkenoate cements are similar to those reported for polymethylmetacrylate-based cements, which suggests their potential use in orthopedic applications. Finally, the glass reactivity and the presence of unreacted –COOH functional groups were qualitatively evaluated by FTIR. Phase separation in glasses having SiO2/Al2O3 ratios > 1 as well as the surface reactivity of the glass particles were qualitatively evaluated by using Energy Dispersive Spectroscopy (EDX on the SEM. In order to optimize the compression strength of glass-polyalkenoate cements, future work could be oriented toward the improvement of the glass reactivity, toward the optimization of the polymer/glass ratio and toward the use of nanometric glass particles.Los cementos de polialquenoato vítreo son ampliamente utilizados para aplicaciones dentales. Con el propósito de entender

Enhanced Photocatalytic Activity of ZrO2-SiO2 Nanoparticles by Platinum Doping

Directory of Open Access Journals (Sweden)

Mohammad W. Kadi

2013-01-01

Full Text Available ZrO2-SiO2 mixed oxides were prepared via the sol-gel method. Photo-assisted deposition was utilized for doping the prepared mixed oxide with 0.1, 0.2, 0.3, and 0.4 wt% of Pt. XRD spectra showed that doping did not result in the incorporation of Pt within the crystal structure of the material. UV-reflectance spectrometry showed that the band gap of ZrO2-SiO2 decreased from 3.04 eV to 2.48 eV with 0.4 wt% Pt doping. The results show a specific surface area increase of 20%. Enhanced photocatalysis of Pt/ZrO2-SiO2 was successfully tested on photo degradation of cyanide under illumination of visible light. 100% conversion was achieved within 20 min with 0.3 wt% of Pt doped ZrO2-SiO2.

Crystallization in Y-Si-Al-O-N glasses

Energy Technology Data Exchange (ETDEWEB)

Leng-Ward, G; Lewis, M H

1985-05-01

The development of crystallization in oxynitride glasses has been characterized using transmission electron microscopy and scanning electron microscopy, X-ray (energy-dispersive) microanalysis, and powder X-ray diffraction techniques. A series of glasses was prepared while maintaining the ratio of yttrium-to-silicon-to-aluminium, but replacing oxygen with nitrogen up to the nitrogen solubility limit. On annealing at 1250 C, the oxide glass fully crystallized into yttrium disilicate (Y2Si2O7). Al2O3 and mullite (Al6Si2O13) while, with increasing nitrogen content, the disilicate phase was progressively replaced by yttrium aluminium garnet (Y3Al5O12) and nitrogen was mainly incorporated into Si2N2O. Annealing of the nitrogen glasses at 1100 C produced partial crystallization involving an intermediate phase related to nitrogen-wollastonite. Phase separation in an as-quenched SiO2-rich Y-Si-Al-O composition glass is illustrated. 9 references.

Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

Science.gov (United States)

Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

2018-03-01

In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

Raman spectra of MgSiO3 . 10% Al2O3-perovskite at various pressures and temperatures

International Nuclear Information System (INIS)

Liu Lingun; Irifune, T.

1995-01-01

Variations of Raman spectra of MgSiO 3 . 10% Al 2 O 3 -perovskite were investigated up to about 270 kbar at room temperature and in the range 108-425 K at atmospheric pressure. Like MgSiO 3 -perovskite, the Raman frequencies of MgSiO 3 . 10% Al 2 O 3 -perovskite increase nonlinearly with increasing pressure and decrease linearly with increasing temperature within the experimental uncertainties and the range investigated. A comparison of these data with those of MgSiO 3 -perovskite suggests that MgSiO 3 . 10% Al 2 O 3 -perovskite is slightly more compressible than MgSiO 3 -perovskite, and that the volume thermal expansion for MgSiO 3 . 10% Al 2 O 3 -perovskite is also slightly greater than that for MgSiO 3 -perovskite. (orig.)

Local transport properties, morphology and microstructure of ZnO decorated SiO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Van Nostrand, Joseph E [Air Force Research Laboratory, Information Directorate, Rome, NY (United States); Cortez, Rebecca [Union College, Schenectady, NY (United States); Rice, Zachary P; Cady, Nathaniel C; Bergkvist, Magnus, E-mail: Joseph.VanNostrand@rl.af.mil [Albany College of Nanoscale Science and Engineering, Albany, NY (United States)

2010-10-15

We report on a novel, surfactant free method for achieving nanocrystalline ZnO decoration of an SiO{sub 2} nanoparticle at ambient temperature. The size distributions of the naked and decorated SiO{sub 2} nanoparticles are measured by means of dynamic light scattering, and a monodisperse distribution is observed for each. The morphology and microstructure of the nanoparticles are explored using atomic force microscopy and high resolution transmission electron microscopy. Investigation of the optical properties of the ZnO decorated SiO{sub 2} nanoparticles shows absorption at 350 nm. This blue shift in absorption as compared to bulk ZnO is shown to be consistent with quantum confinement effects due to the small size of the ZnO nanocrystals. Finally, the local electronic transport properties of the nanoparticles are explored by scanning conductance atomic force microscopy. A memristive hysteresis in the transport properties of the individual ZnO decorated SiO{sub 2} nanoparticles is observed. Optical absorption measurements suggest the presence of oxygen vacancies, whose migration and annihilation appear to contribute to the dynamic conduction properties of the ZnO decorated nanoparticles. We believe this to be the first demonstration of a ZnO decorated SiO{sub 2} nanoparticle, and this represents a simple yet powerful way of achieving the optical and electrical properties of ZnO in combination with the simplicity of SiO{sub 2} synthesis.

Stability of trapped electrons in SiO2

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Flament, O.; Leray, J.L.

1998-01-01

Electron trapping near the Si/SiO 2 interface plays a crucial role in mitigating the response of MOS devices to ionizing radiation or high-field stress. These electrons offset positive charge due to trapped holes, and can be present at densities exceeding 10 12 cm -2 in the presence of a similar density of trapped positive charge. The nature of the defects that serve as hosts for trapped electrons in the near-interfacial SiO 2 is presently unknown, although there is compelling evidence that these defects are often intimately associated with trapped holes. This association is depicted most directly in the model of Lelis et al., which suggests that trapped electrons and holes occupy opposite sides of a compensated E center in SiO 2 . Charge exchange between electron traps and the Si can occur over a wide range of time scales, depending on the trap depth and location relative to the Si/SiO 2 interface. Here the authors report a detailed study of the stability of electron traps associated with trapped holes near the Si/SiO 2 interface

Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

International Nuclear Information System (INIS)

Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

2000-01-01

The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

Investigating the solubility and cytocompatibility of CaO-Na2 O-SiO2 /TiO2 bioactive glasses.

Science.gov (United States)

Wren, Anthony W; Coughlan, Aisling; Smith, Courtney M; Hudson, Sarah P; Laffir, Fathima R; Towler, Mark R

2015-02-01

This study aims to investigate the solubility of a series of titanium (TiO2 )-containing bioactive glasses and their subsequent effect on cell viability. Five glasses were synthesized in the composition range SiO2 -Na2 O-CaO with 5 mol % of increments TiO2 substituted for SiO2 . Glass solubility was investigated with respect to (1) exposed surface area, (2) particle size, (3) incubation time, and (4) compositional effects. Ion release profiles showed that sodium (Na(+) ) presented high release rates after 1 day and were unchanged between 7 and 14 days. Calcium (Ca(2+) ) release presented a significant change at each time period and was also composition dependent, where a reduction in Ca(2+) release is observed with an increase in TiO2 concentration. Silica (Si(4+) ) release did not present any clear trends while no titanium (Ti(4+) ) was released. Cell numbers were found to increase up to 44%, compared to the growing control population, with a reduction in particle size and with the inclusion of TiO2 in the glass composition. © 2014 Wiley Periodicals, Inc.

Comparative Study of Catalytic Oxidation of Ethanol to Acetaldehyde Using Fe(III Dispersed on Sb2O5 Grafted on SiO2 and on Untreated SiO2 Surfaces

Directory of Open Access Journals (Sweden)

Benvenutti Edilson V.

1998-01-01

Full Text Available Fe(III was supported on Sb(V oxide grafted on the silica gel surface and directly on the silica gel surface using ion-exchange and impregnation processes producing Fe/Sb/SiO2 and Fe/SiO2, respectively. The catalytic conversion of ethanol to acetaldehyde was much more efficient using Fe/Sb/SiO2 than Fe/SiO2 as catalyst. This higher efficiency of the former catalyst takes into account two aspects: a the new phase FeSbO4 formed when Fe/Sb/SiO2 is heat treated and, b it is higher dispersion on the matrix.

Preparation and characterization of Fe3O4/SiO2/Bi2MoO6 composite as magnetically separable photocatalyst

International Nuclear Information System (INIS)

Hou, Xuemei; Tian, Yanlong; Zhang, Xiang; Dou, Shuliang; Pan, Lei; Wang, Wenjia; Li, Yao; Zhao, Jiupeng

2015-01-01

Highlights: • Fe 3 O 4 /SiO 2 /Bi 2 MoO 6 composite was prepared by a hydrothermal method. • The composite has an enhanced visible absorption compared with pure Bi 2 MoO 6 . • The magnetic photocatalyst displayed excellent stability and reusability. • O 2 ·− and · OH play a major role during the photocatalytic process. - Abstract: In this paper, Fe 3 O 4 /SiO 2 /Bi 2 MoO 6 microspheres were prepared by a facile hydrothermal method. The scanning electron microscope (SEM) results revealed that flower-like three dimensional (3D) Bi 2 MoO 6 microspheres were decorated with Fe 3 O 4 /SiO 2 magnetic nanoparticles. The UV–vis diffuse reflection spectra showed extended absorption within the visible light range compared with pure Bi 2 MoO 6 . We evaluated the photocatalytic activities of Fe 3 O 4 /SiO 2 /Bi 2 MoO 6 microspheres on the degradation of Rhodamine B (RhB) under visible light irradiation and found that the obtained composite exhibited higher photocatalytic activity than pure Bi 2 MoO 6 and P25. Moreover, the Fe 3 O 4 /SiO 2 /Bi 2 MoO 6 composite also displayed excellent stability and their photocatalytic activity decreased slightly after reusing 5 cycles. Meanwhile, the composite could be easily separated by applying an external magnetic field. The trapping experiment results suggest that superoxide radical species O 2 ·− and hydroxyl radicals · OH play a major role in Fe 3 O 4 /SiO 2 /Bi 2 MoO 6 system under visible light irradiation. The combination of flower-like three dimensional (3D) Bi 2 MoO 6 microspheres and Fe 3 O 4 /SiO 2 magnetic nanospheres provides a useful strategy for designing multifunctional nanostructure materials with enhanced photocatalytic activities in the potential applications of water purification

One step process of decomposition and polymerization to fabricate SiO{sub 2} hollow spheres/polyimide composite for foldable OLEDs

Energy Technology Data Exchange (ETDEWEB)

Kim, Min Kyu [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Dong Won; Moon, Soo Hyun [School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Dong-Wook [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); College of Engineering, Mathematics and Physical Sciences, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom); Oh, Tae Sik [School of Mechanical and ICT Convergence Engineering, Sunmoon University, Asan 336-708 (Korea, Republic of); Yoo, Ji Beom, E-mail: jbyoo@skku.edu [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2017-03-15

Graphical abstract: The SiO{sub 2} hollow spheres and polyimide hybrid synthesized using one step process, simultaneous occurrence of decomposition and polymerization (SODP) is useful with a ultra-low dielectric constant and high thermal stability for flexible OLED. - Highlights: • We fabricated hybrid films of SHS/PI by using a one step process with SODP. • The film has ultralow dielectric constant (50 vol% at k = 1.67). • There is no collapse of SiO{sub 2} hollow spheres in the PI matrix after bending test for 50,000 cycles. - Abstract: The fabrication of interlayer dielectrics (ILDs) in flexible organic light-emitting diodes (OLEDs) requires flexible materials with a low dielectric constant as well as materials with excellent electrical, thermal, and mechanical properties for optimal device performance. Hybrid films of SiO{sub 2} hollow spheres (SHS)/polyimide (PI) were prepared using a one-step process, with simultaneous occurrence of decomposition (polystyrene, PS) and polymerization (PI) (SODP). No collapse of SiO{sub 2} hollow spheres in PI was observed from 10 vol% to 60 vol% SHS in hybrid films. The dielectric constant of hybrid films was reduced from 3.45 to 1.67 and was saturated at above 50 vol% of SHS due to the maximum fill factor of SHS in the PI matrix. The thermal stability was excellent up to 500 °C due to the inherent thermal property of PI. After a bending test for 50,000 cycles at a bending radius of 1 mm, the SHS/PI hybrid films retained their dielectric constant and current density. These results indicate the hybrid film to be the most promising candidate for flexible ILDs with a low dielectric constant and high thermal stability for foldable OLEDs.

Synthesis of TiO2-doped SiO2 composite films and its applications

Indian Academy of Sciences (India)

Wintec

structure of the titanium oxide species in the TiO2-doped SiO2 composite films and the photocatalytic reactiv- ity in order to ... gaku D-max γA diffractometer with graphite mono- chromized ... FT–IR absorption spectra of TiO2-doped SiO2 com-.

Viscosity Measurements of "FeO"-SiO2 Slag in Equilibrium with Metallic Fe

Science.gov (United States)

Chen, Mao; Raghunath, Sreekanth; Zhao, Baojun

2013-06-01

The current study delivered the measurements of viscosities in the system "FeO"-SiO2 in equilibrium with metallic Fe in the composition range between 15 and 40 wt pct SiO2. The experiments were carried out in the temperature range of 1473 K to 1773 K (1200 °C to 1500 °C) using a rotational spindle technique. An analysis of the quenched sample by electron probe X-ray microanalysis (EPMA) after the viscosity measurement enables the composition and microstructure of the slag to be directly linked with the viscosity. The current results are compared with available literature data. The significant discrepancies of the viscosity measurements in this system have been clarified. The possible reasons affecting the accuracy of the viscosity measurement have been discussed. The activation energies derived from the experimental data have a sharp increase at about 33 wt pct SiO2, which corresponds to the composition of fayalite (Fe2SiO4). The modified quasi-chemical model was constructed in the system "FeO"-SiO2 to describe the current viscosity data.

Crystallization and characterization of Y2O3-SiO2 glasses

Science.gov (United States)

Drummond, Charles H., III; Lee, William E.; Sanders, W. A.; Kiser, J. D.

1991-01-01

Glasses in the yttria-silica system with 20 to 40 mol pct Y2O3 were subjected to recrystallization studies after melting at 1900 to 2100 C in W crucibles in 1 and 50 atm N2. The TEM and XRD results obtained indicate the presence of the delta, gamma, gamma prime, and beta-Y2Si2O7 crystalline phases, depending on melting and quenching conditions. Heat treatment in air at 1100 to 1600 C increased the amount of crystallization, and led to the formation of Y2SiO5, cristabalite, and polymorphs of Y2Si2O7. Also investigated were the effects of 5 and 10 wt pct zirconia additions.

Density of Na2O-Li2O-SiO2-B2O3 Molten Slag at 1 803-1 873 K

Institute of Scientific and Technical Information of China (English)

XIAO Feng; FANG Liang

2004-01-01

The density of three kinds of molten slags was measured by modified sessile drop method at 1 803-1 873 K. The density of molten slag is found to decrease with increasing temperature. The temperature coefficients of Na2O-Li2O-SiO2 and Li2O-SiO2-B2O3 slag are smaller than that of Na2O-B2O3 slag. The molar volume of slags increases with increasing temperature.

Study on spectroscopic properties and effects of tungsten ions in 2Bi2O3-3GeO2/SiO2 glasses.

Science.gov (United States)

Yu, Pingsheng; Su, Liangbi; Cheng, Junhua; Zhang, Xia; Xu, Jun

2017-04-01

The 2Bi 2 O 3 -3GeO 2 /SiO 2 glass samples have been prepared by the conventional melt quenching technique. XRD patterns, absorption spectra, excitation-emission spectra and Raman measurements were utilized to characterize the synthesized glasses. When substitute SiO 2 for GeO 2 , the 0.4Bi 2 O 3 -(0.4-0.1)GeO 2 -(0.2-0.5)SiO 2 glasses exhibit strong emission centered at about 475nm (under 300nm excitation), and the decay constants are within the scope of 20-40ns. W doping into 2Bi 2 O 3 -3SiO 2 glass could increase the emission intensity of 470nm, and the W-doped 2Bi 2 O 3 -3SiO 2 glass has shown another emission at about 433nm with much shorter decay time (near 10ns). The 2Bi 2 O 3 -3GeO 2 /SiO 2 glass system could be the possible candidate for scintillator in high energy physics applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

Chip-based molecularly imprinted monolithic capillary array columns coated GO/SiO2 for selective extraction and sensitive determination of rhodamine B in chili powder.

Science.gov (United States)

Zhai, Haiyun; Huang, Lu; Chen, Zuanguang; Su, Zihao; Yuan, Kaisong; Liang, Guohuan; Pan, Yufang

2017-01-01

A novel solid-phase extraction chip embedded with array columns of molecularly imprinted polymer-coated silanized graphene oxide (GO/SiO2-MISPE) was established to detect trace rhodamine B (RB) in chili powder. GO/SiO2-MISPE monolithic columns for RB detection were prepared by optimizing the supporting substrate, template, and polymerizing monomer under mild water bath conditions. Adsorption capacity and specificity, which are critical properties for the application of the GO/SiO2-MISPE monolithic column, were investigated. GO/SiO2-MIP was examined by scanning electron microscopy (SEM) and Fourier transform-infrared spectroscopy. The recovery and the intraday and interday relative standard deviations for RB ranged from 83.7% to 88.4% and 2.5% to 4.0% and the enrichment factors were higher than 110-fold. The chip-based array columns effectively eliminated impurities in chili powder, indicating that the chip-based GO/SiO2-MISPE method was reliable for RB detection in food samples using high-performance liquid chromatography. Accordingly, this method has direct applications for monitoring potentially harmful dyes in processed food. Copyright © 2016 Elsevier Ltd. All rights reserved.

Hydrogen and chlorine detection at the SiO2/Si interface

International Nuclear Information System (INIS)

Tsong, I.S.T.; Monkowski, M.D.; Monkowski, J.R.; Wintenberg, A.L.; Miller, P.D.; Moak, C.D.

1981-01-01

Hydrogen and chlorine depth profiles were obtained on a series of silicon oxides thermally grown in HCl/O 2 and Cl 2 /O 2 ambients at 1100 0 C for 15 minutes using the 19 F nuclear reaction and SIMS techniques. The data show close correlation between the H and Cl profiles in both the HCl/O 2 and Cl 2 /O 2 oxides. While the H and Cl appear to be enriched at the SiO 2 /Si interface of the HCl/O 2 oxides, they are higher in concentration and more evenly distributed in the oxide bulk of the Cl 2 /O 2 oxides

In vitro cytotoxicity of SiO2 or ZnO nanoparticles with different sizes and surface charges on U373MG human glioblastoma cells

Directory of Open Access Journals (Sweden)

Kim JE

2014-12-01

Full Text Available Jung-Eun Kim,1,* Hyejin Kim,1,* Seong Soo A An,2 Eun Ho Maeng,3 Meyoung-Kon Kim,4 Yoon-Jae Song1 1Department of Life Science, 2Department of Bionano Technology, Gachon University, Seongnam-Si, South Korea; 3Korea Testing and Research Institute, Seoul, South Korea; 4Department of Biochemistry and Molecular Biology, Korea University Medical School and College, Seoul, South Korea *These authors contributed equally to this work Abstract: Silicon dioxide (SiO2 and zinc oxide (ZnO nanoparticles are widely used in various applications, raising issues regarding the possible adverse effects of these metal oxide nanoparticles on human cells. In this study, we determined the cytotoxic effects of differently charged SiO2 and ZnO nanoparticles, with mean sizes of either 100 or 20 nm, on the U373MG human glioblastoma cell line. The overall cytotoxicity of ZnO nanoparticles against U373MG cells was significantly higher than that of SiO2 nanoparticles. Neither the size nor the surface charge of the ZnO nanoparticles affected their cytotoxicity against U373MG cells. The 20 nm SiO2 nanoparticles were more toxic than the 100 nm nanoparticles against U373MG cells, but the surface charge had little or no effect on their cytotoxicity. Both SiO2 and ZnO nanoparticles activated caspase-3 and induced DNA fragmentation in U373MG cells, suggesting the induction of apoptosis. Thus, SiO2 and ZnO nanoparticles appear to exert cytotoxic effects against U373MG cells, possibly via apoptosis. Keyword: apoptosis

Preparation and Characterization of Fluorescent SiO2 Microspheres

Science.gov (United States)

Xu, Cui; Zhang, Hao; Guan, Ruifang

2018-01-01

Fluorescent compound without typical fluorophores was synthesized with citric acid (CA) and aminopropyltriethoxysilane (APTS) firstly, and then it was grafted to the surface of the prepared SiO2 microspheres by chemical reaction. The fluorescent SiO2 microspheres with good fluorescent properties were obtained by optimizing the reaction conditions. And the morphology and structure of the fluorescent SiO2 microspheres have been characterized by scanning electron microscopy (SEM) and fourier transform infrared (FTIR) spectroscopy. The results showed that the preparation of fluorescent SiO2 microspheres have good monodispersity and narrow particle size distribution. Moreover, the fluorescent SiO2 microspheres can be applied to detect Fe3+ in aqueous solution, prepare fluorescent SiO2 rubber, and have potential to be applied in the fluorescent labeling and fingerprint appearing technique fields.

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

International Nuclear Information System (INIS)

Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

2004-01-01

Nonradiative photoluminescence (PL) lifetime (τ nr ) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τ nr of 105 ps at room temperature

Preparation of Microkernel-Based Mesoporous (SiO2-CdTe-SiO2)@SiO2 Fluorescent Nanoparticles for Imaging Screening and Enrichment of Heat Shock Protein 90 Inhibitors from Tripterygium Wilfordii.

Science.gov (United States)

Hu, Yue; Miao, Zhao-Yi; Zhang, Xiao-Jing; Yang, Xiao-Tong; Tang, Ying-Ying; Yu, Sheng; Shan, Chen-Xiao; Wen, Hong-Mei; Zhu, Dong

2018-05-01

The currently utilized ligand fishing for bioactive molecular screening from complex matrixes cannot perform imaging screening. Here, we developed a new solid-phase ligand fishing coupled with an in situ imaging protocol for the specific enrichment and identification of heat shock protein 90 (Hsp 90) inhibitors from Tripterygium wilfordii, utilizing a multiple-layer and microkernel-based mesoporous nanostructure composed of a protective silica coating CdTe quantum dot (QD) core and a mesoporous silica shell, i.e., microkernel-based mesoporous (SiO 2 -CdTe-SiO 2 )@SiO 2 fluorescent nanoparticles (MMFNPs) as extracting carries and fluorescent probes. The prepared MMFNPs showed a highly uniform spherical morphology, retention of fluorescence emission, and great chemical stability. The fished ligands by Hsp 90α-MMFNPs were evaluated via the preliminary bioactivity based on real-time cellular morphology imaging by confocal laser scanning microscopy (CLSM) and then identified by mass spectrometry (MS). Celastrol was successfully isolated as an Hsp 90 inhibitor, and two other specific components screened by Hsp 90α-MMFNPs, i.e., demecolcine and wilforine, were preliminarily identified as potential Hsp 90 inhibitors through the verification of strong affinity to Hsp 90 and antitumor bioactivity. The approach based on the MMFNPs provides a strong platform for imaging screening and discovery of plant-derived biologically active molecules with high efficiency and selectivity.

Residual stress and bending strength of ZnO films deposited on polyimide sheet by RF sputtering system

Energy Technology Data Exchange (ETDEWEB)

Kusaka, Kazuya, E-mail: kusaka@tokushima-u.ac.jp [Institute of Technology and Science, Tokushima University, 2-1, Minamijosanjima, Tokushima, Tokushima 7708506 (Japan); Maruoka, Yutaka, E-mail: ymaruoka1116@gmail.com [Graduate School of Advanced Technology and Science, Tokushima University, 2-1, Minamijosanjima, Tokushima, Tokushima 7708506 (Japan); Matsue, Tatsuya, E-mail: tmatsue@mat.niihama-nct.ac.jp [Department of Environmental Materials Engineering National Institute of Technology, NIIHAMA College, 7-1, Yakumo-cho, Niihama, Ehime 7928580 (Japan)

2016-05-15

Zinc oxide (ZnO) films were deposited on a soft polyimide sheet substrate by radio frequency sputtering with a ZnO powder target, and the films' crystal orientations and residual stress were investigated using x-ray diffraction as a function of substrate temperature. C-axis oriented ZnO films were achieved using this ZnO powder target method. The ZnO films exhibited high compressive residual stresses between −0.7 and −1.4 GPa. Finally, the authors examined the strength of the obtained film by applying tensile bending loads. No cracks were observed on the surfaces of the ZnO films after a bending test using cylinders with diameters >25 mm. After a bending test using a cylinder with a diameter of 19 mm, large cracks were formed on the films. Therefore, the authors concluded that the tensile bending strength of the obtained films was greater than ∼420 MPa.

Contribution to the study of metal-oxide-semiconductor devices with optical access. In2O3-SiO2-Si structure

International Nuclear Information System (INIS)

Thenoz, Yves.

1974-01-01

A general study of the fabrication of the structure In 2 O 3 /SiO 2 /Si was made encompassing the problems posed during the realization of these structures. The sputtering study enabled the influence of the main parameters on layer properties to be determined. The decisive importance of clean conditions throughout fabrication (especially during sputtering) on the properties of In 2 O 3 layers and on those of the structure and its stability was revealed. However, the problem of ageing of the structure were not investigated. Finally, the construction of MOS capacitors and transistors showed that In 2 O 3 /SiO 2 /Si structures can be used in MOS circuits [fr

High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

Science.gov (United States)

Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

2018-03-01

The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

Synthesis and photoluminescence of Ca-(Sn,Ti)-Si-O compounds

International Nuclear Information System (INIS)

Abe, Shunsuke; Yamane, Hisanori; Yoshida, Hisashi

2010-01-01

The phase relation of the compounds prepared in the CaO-SnO 2 -SiO 2 system at 1673 K and in the CaO-TiO 2 -SiO 2 system at 1573 K was investigated in order to explore new Ti 4+ -activated stannate phosphors. Solid solutions of Ca(Sn 1-x Ti x )SiO 5 and Ca 3 (Sn 1-y Ti y )Si 2 O 9 were synthesized at x = 0-1.0 and y = 0-0.10, respectively, and their crystal structures were analyzed by powder X-ray diffraction. Photoluminescence of these solid solutions was observed in a broad range of a visible light wavelength region under ultraviolet (UV) light excitation. The peaks of the emission band of Ca(Sn 0.97 Ti 0.03 )SiO 5 and Ca 3 (Sn 0.925 Ti 0.075 )Si 2 O 9 were at 510 nm under excitation of 252 nm and at 534 nm under excitation of 258 nm, respectively. The absorption edges estimated by the diffuse reflectance spectra were at 300 nm (4.1 eV) for CaSnSiO 5 and at 270 nm (4.6 eV) for Ca 3 SnSi 2 O 9 , suggesting that the excitation levels in Ca(Sn 1-x Ti x )SiO 5 were above the band gap of the host, although the levels in Ca 3 (Sn 1-y Ti y )Si 2 O 9 were within the band gap and near the conduction band edge.

Refractories in the Al2O3-ZrO2-SiO2 system

International Nuclear Information System (INIS)

Banerjee, S.P.; Bhadra, A.K.; Sircar, N.R.

1978-01-01

The effect of addition of ZrO 2 in different proportions in the refractories of the Al 2 O 3 -SiO 2 system was studied. The investigation was confined to two broad ranges of compositions incorporating zirconia (15-30 percent and 80-85 percent) in the Al 2 O 3 -ZrO 2 -SiO 2 system. The overall attainment of properties is dependent upon the mode of fabrication and firing, and bears a relationship with the phase assemblages and the relative proportion thereof. Of the different characteristics, the trend of dissociation of zircon has been found to be specially significant vis-a-vis the temperature of firing and thermal shock resistance. Reassociation of the dissociated products has been ascribed to bring forth improved resistance to thermal spalling. The different products developed during this investigation are considered to be very promising which find useful applications in view of the properties attained by them. (auth.)

Enhanced apatite-forming ability and antibacterial activity of porous anodic alumina embedded with CaO-SiO2-Ag2O bioactive materials.

Science.gov (United States)

Ni, Siyu; Li, Xiaohong; Yang, Pengan; Ni, Shirong; Hong, Feng; Webster, Thomas J

2016-01-01

In this study, to provide porous anodic alumina (PAA) with bioactivity and anti-bacterial properties, sol-gel derived bioactive CaO-SiO2-Ag2O materials were loaded onto and into PAA nano-pores (termed CaO-SiO2-Ag2O/PAA) by a sol-dipping method and subsequent calcination of the gel-glasses. The in vitro apatite-forming ability of the CaO-SiO2-Ag2O/PAA specimens was evaluated by soaking them in simulated body fluid (SBF). The surface microstructure and chemical property before and after soaking in SBF were characterized. Release of ions into the SBF was also measured. In addition, the antibacterial properties of the samples were tested against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus). The results showed that CaO-SiO2-Ag2O bioactive materials were successfully decorated onto and into PAA nano-pores. In vitro SBF experiments revealed that the CaO-SiO2-Ag2O/PAA specimens dramatically enhanced the apatite-forming ability of PAA in SBF and Ca, Si and Ag ions were released from the samples in a sustained and slow manner. Importantly, E. coli and S. aureus were both killed on the CaO-SiO2-Ag2O/PAA (by 100%) samples compared to PAA controls after 3 days of culture. In summary, this study demonstrated that the CaO-SiO2-Ag2O/PAA samples possess good apatite-forming ability and high antibacterial activity causing it to be a promising bioactive coating candidate for implant materials for orthopedic applications. Copyright © 2015 Elsevier B.V. All rights reserved.

A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure.

Science.gov (United States)

Lu, Jing; Tu, Xinglong; Yin, Guilin; Wang, Hui; He, Dannong

2017-11-09

In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO 2 /Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO 2 , which has a resistivity in the range of 50-80 Ω∙cm. The I-V curve obtained in dark condition evidences the structure a rectifying junction, which is further confirmed by placing external bias. Compared to the resistance state modulated by electric field only in dark (without illumination), the switching voltage driving the resistance state of the structure from one state to the other, shows clear shift under a spot laser illumination. Remarkably, the switching voltage shift shows a dual dependence on the illumination position and power of the spot laser. We ascribe this dual dependence to the electric filed produced by the redistribution of photo-generated carriers, which enhance the internal barrier of the hetero-junction. A complete theoretical analysis based on junction current and diffusion equation is presented. The dependence of the switching voltage on spot laser illumination makes the n-type Mn-doped ZnO/SiO 2 /Si structure sensitive to light, which thus allows for the integration of an extra functionality in the ZnO-based photoelectric device.

Energy stored in BeO, MgO, Al2O3 and SiO2 oxides irradiated with neutrons

International Nuclear Information System (INIS)

Roux, Andre

1969-01-01

Within the field of researches on refractory oxides which may be used in structure materials in atomic pile, the objective of this research thesis has been the measurement of the energy stored in some specific oxides (BeO, MgO, Al 2 O 3 and SiO 2 ) after their irradiation in a nuclear reactor. This measurement is performed by 'healing' the irradiated substance by means of thermal treatments during which sample initial mass and morphologies are preserved. The measurement of the Wigner energy is then performed by differential enthalpy analysis. The first part reports the experimental determination of Wigner energies (measurement apparatus, method of ballistic differential enthalpy analysis, thermo-gram compensation). The second part presents the Wigner energies obtained for the sintered BeO, the sintered MgO, the sintered Al 2 O 3 , and the vitreous SiO 2 . The third part reports the result interpretation

Photoluminescence analysis of Ce3+:Zn2SiO4 & Li++ Ce3+:Zn2SiO4: phosphors by a sol-gel method

Science.gov (United States)

Babu, B. Chandra; Vandana, C. Sai; Guravamma, J.; Rudramadevi, B. Hemalatha; Buddhudu, S.

2015-06-01

Here, we report on the development and photoluminescence analysis of Zn2SiO4, Ce3+:Zn2SiO4 & Li+ + Ce3+: Zn2SiO4 novel powder phosphors prepared by a sol-gel technique. The total amount of Ce3+ ions was kept constant in this experiment at 0.05 mol% total doping. The excitation and emission spectra of undoped (Zn2SiO4) and Ce3+ doped Zn2SiO4 and 0.05 mol% Li+ co-doped samples have been investigated. Cerium doped Zn2SiO4 powder phosphors had broad blue emission corresponding to the 2D3/2→2FJ transition at 443nm. Stable green-yellow-red emission has been observed from Zn2SiO4 host matrix and also we have been observed the enhanced luminescence of Li+ co-doped Zn2SiO4:Ce3+. Excitation and emission spectra of these blue luminescent phosphors have been analyzed in evaluating their potential as luminescent screen coating phosphors.

Enhancement of photocatalytic properties of TiO2 nanoparticles doped with CeO2 and supported on SiO2 for phenol degradation

International Nuclear Information System (INIS)

Hao, Chunjing; Li, Jing; Zhang, Zailei; Ji, Yongjun; Zhan, Hanhui; Xiao, Fangxing; Wang, Dan; Liu, Bin; Su, Fabing

2015-01-01

Highlights: • CeO 2 -TiO 2 /SiO 2 composites were prepared via a facile co-precipitation method. • Introduction of SiO 2 support increases the dispersion of CeO 2 -TiO 2 . • CeO 2 -TiO 2 /SiO 2 exhibits an enhanced photocatalytic efficiency for phenol degradation. • Ce 3+ /Ce 4+ pair coexisting in CeO 2 improves electron–hole pairs separation efficiency. - Abstract: A series of CeO 2 -TiO 2 and CeO 2 -TiO 2 /SiO 2 composites were prepared with TiCl 4 and Ce (NO 3 ) 3 ·6H 2 O as precursors via a facile co-precipitation method. The obtained samples were characterized by various techniques such as X-ray diffraction (XRD), nitrogen adsorption (N 2 -BET), Fourier transformation infrared spectrum (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV–Vis spectroscopy measurements. The results indicated that TiO 2 doped with CeO 2 and supported on SiO 2 could reduce the crystallite size, inhibit the phase transformation, enhance the thermal stability, and effectively extend the spectral response from UV to visible range. When applied to the phenol photodegradation on a homemade batch reactor with an external cooling jacket, the CeO 2 -TiO 2 /SiO 2 catalysts exhibited significantly enhanced photodegradation efficiency in comparison with commercial Degussa P25 and CeO 2 -TiO 2 . The unique catalytic properties of CeO 2 -TiO 2 /SiO 2 were ascribed to improved electron–hole pairs separation efficiency and formation of more reactive oxygen species owing to the presence of Ce 3+ /Ce 4+ , as well as high dispersion of active component of CeO 2 -TiO 2 as a result of the introduction of SiO 2 support. Furthermore, the catalysts can be easily recovered from the reaction solution by centrifugation and reused for four cycles without significant loss of activity

Electronic structures and Eu3+ photoluminescence behaviors in Y2Si2O7 and La2Si2O7

International Nuclear Information System (INIS)

Zhang Zhiya; Wang Yuhua; Zhang Feng; Cao Haining

2011-01-01

Research highlights: → Host excitation near the band gap of Y 2 Si 2 O 7 and La 2 Si 2 O 7 is analyzed. → The calculated result well explains Eu 3+ PL behaviors in Y 2 Si 2 O 7 and La 2 Si 2 O 7 . → The electronic structure and Eu 3+ VUV PL in La 2 Si 2 O 7 are first estimated. - Abstract: The electronic structures and linear optical properties of Y 2 Si 2 O 7 (YSO) and La 2 Si 2 O 7 (LSO) are calculated by LDA method based on the theory of DFT. Both YSO and LSO are direct-gap materials with the direct band gap of 5.89 and 6.06 eV, respectively. The calculated total and partial density of states indicate that in both YSO and LSO the valence band (VB) is mainly constructed from O 2p and the conduction band (CB) is mostly formed from Y 4d or La 5d. Both the calculated VB and CB of YSO exhibit relatively wider dispersion than that of LSO. In addition, the CB of YSO presents more electronic states. Meanwhile, the VB of LSO shows narrower energy distribution with higher electronic states density. The theoretical absorption of YSO shows larger bandwidth and higher intensity than that of LSO. The results are compared with the experimental host excitations and impurity photoluminescence in Eu 3+ -doped YSO and LSO.

Synthesis of Hollow Nanotubes of Zn2SiO4 or SiO2: Mechanistic Understanding and Uranium Adsorption Behavior.

Science.gov (United States)

Tripathi, Shalini; Bose, Roopa; Roy, Ahin; Nair, Sajitha; Ravishankar, N

2015-12-09

We report a facile synthesis of Zn2SiO4 nanotubes using a two-step process consisting of a wet-chemical synthesis of core-shell ZnO@SiO2 nanorods followed by thermal annealing. While annealing in air leads to the formation of hollow Zn2SiO4, annealing under reducing atmosphere leads to the formation of SiO2 nanotubes. We rationalize the formation of the silicate phase at temperatures much lower than the temperatures reported in the literature based on the porous nature of the silica shell on the ZnO nanorods. We present results from in situ transmission electron microscopy experiments to clearly show void nucleation at the interface between ZnO and the silica shell and the growth of the silicate phase by the Kirkendall effect. The porous nature of the silica shell is also responsible for the etching of the ZnO leading to the formation of silica nanotubes under reducing conditions. Both the hollow silica and silicate nanotubes exhibit good uranium sorption at different ranges of pH making them possible candidates for nuclear waste management.

Preparação e caracterização de materiais compósitos SiC/caulim/Al via "squeeze-casting" Preparation and characterization of SiC/kaolin/Al composite materials by squeeze- casting

Directory of Open Access Journals (Sweden)

M. Freitas

2009-09-01

Full Text Available Na busca de materiais com propriedades diferenciadas, vem aumentando nos últimos anos as pesquisas em materiais compósitos. Um dos importantes métodos de fabricação destes compósitos é o processo de infiltração sob pressão de metal fundido denominado "squeeze-casting". Este processo oferece algumas vantagens, tais como facilidade de produzir o compósito, baixo custo e capacidade de formação de estruturas em rede. Neste trabalho foram produzidos e caracterizados compósitos SiC-Al, com concentrações em caulim variando entre 10 e 50% em substituição a fase majoritária SiC. As pré-formas cerâmicas foram produzidas controlando-se a fração granulométrica do SiC/caulim para uma melhor infiltração. Estas pré-formas, após sinterização a 1100 ºC/1 h, resultaram altamente porosas, sendo a porosidade aumentada com o aumento do caulim em substituição ao SiC. Análises de DRX mostraram a existência de partículas de quartzo além da fase SiC como constituintes das pré-formas. Durante o processo de infiltração e tratamento térmico, o alumínio no estado líquido reagiu preferencialmente com o quartzo e outros aluminossilicatos da pré-forma reduzindo-os, precipitando alumina e silício na microestrutura, a qual apresentou também alumínio em excesso que não reagiu no processo. A sílica e os silicatos da pré-forma, ao reagirem preferencialmente com o alumínio, evitaram a reação do Al com o SiC, prevenindo a formação da fase Al4C3,, a qual é altamente higroscópica e causa a degradação do compósito. Dependendo da composição, os compósitos SiC-caulim-Al desenvolvidos neste trabalho, podem ser usados em aplicações que envolvam elevada resistência mecânica à flexão (240 a 300 MPa, baixa densidade e dureza superficial entre 180 e 380 kgf/mm².In search of materials with different properties, has been increasing the research on composite materials in recent years. One of the important methods of

Effect of Sulfur on Liquidus Temperatures in the ZnO-"FeO"-Al2O3-CaO-SiO2-S System in Equilibrium with Metallic Iron

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Zhao, Baojun; Hayes, Peter C.; Jak, Evgueni

2011-10-01

The phase equilibria in the ZnO-"FeO"-Al2O3-CaO-SiO2-S system have been determined experimentally in equilibrium with metallic iron. A pseudoternary section of the form ZnO-"FeO"-(Al2O3+CaO+SiO2) for CaO/SiO2 = 0.71 (weight), (CaO+SiO2)/Al2O3 = 5.0 (weight), and fixed 2.0 wt pct S concentration has been constructed. It was found that the addition of 2.0 wt pct S to the liquid extends the spinel primary phase field significantly and decreases the size of the wustite primary phase field. The liquidus temperature in the wustite primary phase field is decreased by approximately 80 K and the liquidus temperature in the spinel primary phase field is decreased by approximately 10 K with addition of 2.0 wt pct S in the composition range investigated. It was also found that iron-zinc sulfides are present in some samples in the spinel primary phase field, which are matte appearing at low zinc concentrations and sphalerite (Zn,Fe)S at higher zinc concentrations. The presence of sulfur in the slag has a minor effect on the partitioning of ZnO between the wustite and liquid phases but no effect on the partitioning of ZnO between the spinel and liquid phases.

The Degradation Behavior of SiCf/SiO2 Composites in High-Temperature Environment

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Yang, Xiang; Cao, Feng; Qing, Wang; Peng, Zhi-hang; Wang, Yi

2018-04-01

SiCf/SiO2 composites had been fabricated efficiently by Sol-Gel method. The oxidation behavior, thermal shock property and ablation behavior of SiCf/SiO2 composites was investigated. SiCf/SiO2 composites showed higher oxidation resistance in oxidation atmosphere, the flexural strength retention ratio was larger than 90.00%. After 1300 °C thermal shock, the mass retention ratio was 97.00%, and the flexural strength retention ratio was 92.60%, while after 1500 °C thermal shock, the mass retention ratio was 95.37%, and the flexural strength retention ratio was 83.34%. After 15 s ablation, the mass loss rate was 0.049 g/s and recession loss rate was 0.067 mm/s. The SiO2 matrix was melted in priority and becomes loosen and porous. With the ablation going on, the oxides were washed away by the shearing action of the oxyacetylene flame. The evaporation of SiO2 took away large amount of heat, which is also beneficial to the protection for SiCf/SiO2 composites.

Research of the lime rich portions of the CaO-SiO2-P2O5 system

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Puertas, F.

1995-03-01

Full Text Available A detailed study has been carried out to explain the influence of Pp^ in silicate phases and in industrial raw meals upon their mineralogical compositions. Some compositions in the lime rich portion of the CaO-SiO2-P2O5 system are studied using laboratory reactants. The results showed that the compositions lying in the range of CaO = 69,5-70,1; P2O5= 16,2-19,5; SiO2 = 11,1-13,6 (wt% give, at 1000 °C, the mineralogical composition (HAp, β-C2S, C5PS which can develop a high strength in chemically bonded ceramics. At high temperature (1400 ºC these compositions give a large amount of silicocarnotite (C5PS and 2C2.C3P phase. A selected composition of the industrial raw meal with added phosphate: CaO = 62,66; SiO2 -= 17,33; Al2O3 = 4,88; Fe2O3 = 4,29; P2O5 = 8,73; MgO = 2,09 (wt% forms at 1350 ºC a clinker containing high amount of α-C2S to replace C3S. Such a clinker may have good applications in the synthesis of active belite cement.Se estudia con detalle la influencia del P2O5 sobre las composiciones mineralógicas en fases silicato y en un crudo industrial. Asimismo se estudian algunas composiciones de la zona rica en cal del sistema CaO-SiO2-P2O5 utilizando reactivos químicos. Los resultados demuestran que, a presión atmosférica y recinto abierto, las composiciones dentro de los límites CaO = 69,5-70,1; P2O5= 16,2-19,5; SiO2 = 11,1-13,6 (% en peso dan a 1000ºC la composición mineralógica siguiente: HAp, β-C2S, C5PS; pueden desarrollar una alta resistencia química en "chemically bonded ceramics". A altas temperaturas (1400°C producen una elevada proporción de silicocarnotita (C5PS S y la fase 2C2.C3P. Con la adición de fosfato a una determinada dosificación de crudo industrial (CaO = 62,66; SiO2 = 17,33; Al2O3 = 4,88; Fe2O3 = 4,29; P2O5 = 8,73; MgO = 2,09 -% en peso- se forma, a 1350°C, un clinker que contiene una alta proporción de α-C2S que reemplaza al C3S. Este clinker puede tener buenas aplicaciones en la obtención de

Wrinkling instability in graphene supported on nanoparticle-patterned SiO2

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Cullen, William; Yamamoto, Mahito; Pierre-Louis, Olivier; Einstein, Theodore; Fuhrer, Michael

2012-02-01

Atomically-thin graphene is arguably the thinnest possible mechanical membrane: graphene's effective thickness (the thickness of an isotropic continuum slab which would have the same elastic and bending stiffness) is significantly less than 1 å, indicating that graphene can distort out-of-plane to conform to sub-nanometer features. Here we study the elastic response of graphene supported on a SiO2 substrate covered with SiO2 nanoparticles. At a low density of nanoparticles, graphene is largely pinned to the substrate due to adhesive interaction. However, with increasing nanoparticle density, graphene's elasticity dominates adhesion and strain is relieved by the formation of wrinkles which connect peaks introduced by the supporting nanoparticles. At a critical density, the wrinkles percolate, resulting in a wrinkle network. We develop a simple elastic model allowing for adhesion which accurately predicts the critical spacing between nanoparticles for wrinkle formation. This work has been supported by the University of Maryland NSF-MRSEC under Grant No. DMR 05-20471 with supplemental funding from NRI, and NSF-DMR 08-04976.

Photocatalytic activity of the binary composite CeO{sub 2}/SiO{sub 2} for degradation of dye

Energy Technology Data Exchange (ETDEWEB)

Phanichphant, Sukon [Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Nakaruk, Auppatham [Department of Industrial Engineering, Faculty of Engineering, Naresuan University, Phitsanulok 65000 (Thailand); Centre of Excellence for Innovation and Technology for Water Treatment, Naresuan University, Phitsanulok 65000 (Thailand); Channei, Duangdao, E-mail: duangdaoc@nu.ac.th [Department of Chemistry, Faculty of Science, Naresuan University, Phitsanulok 65000 (Thailand); Research Center for Academic Excellence in Petroleum, Petrochemicals and Advanced Materials, Naresuan University, Phitsanulok 65000 (Thailand)

2016-11-30

Highlights: • The enhanced photocatalytic activity of the CeO{sub 2}/SiO{sub 2} composite can be explained by the presence of the SiO{sub 2} adsorbent, which effectively increased the surface area of the CeO{sub 2}. • The increased surface area of CeO{sub 2} should be helpful to facilitate more effective adsorption sites, which enhances the photocatalytic degradation of organic pollutant significantly. • SiO{sub 2} modification is effective in separating the photogenerated electrons and holes, which is of great importance for photocatalytic activity. • SiO{sub 2} acted as a carrier for CeO{sub 2} attachment and avoided the agglomeration of CeO{sub 2} particles. - Abstract: In this study, CeO{sub 2} photocatalyst was modified by composite with SiO{sub 2} to increase efficiency and improve photocatalytic activity. The as-prepared SiO{sub 2} particles have been incorporated into the precursor mixture of CeO{sub 2} by homogeneous precipitation and subsequent calcination process. The phase compositions of CeO{sub 2} before and after compositing with SiO{sub 2} were identified by X-ray diffraction (XRD). The morphology and particle size of CeO{sub 2}/SiO{sub 2} composite was analyzed by high resolution transmission electron microscopy (HRTEM) and field emission scanning electron microscopy (FESEM). The results showed SiO{sub 2} spheres with the particle size approximately 100–120 nm, and a uniform layer of CeO{sub 2} nanoparticles with a diameter of about 5–7 nm that were fully composite to the surfaces of SiO{sub 2}. The X-ray photoelectron spectroscopy (XPS) technique was carried out in order to characterize the change in valence state and composite characteristic by shifted peaks of binding energies. The photocatalytic activity was studied through the degradation of Rhodamine B in aqueous solution under visible light exposure. The highest photocatalytic efficiency of CeO{sub 2}/SiO{sub 2} composite was also obtained. To explain the high photocatalytic

Melting relations in the MgO-MgSiO3 system up to 70 GPa

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Ohnishi, Satoka; Kuwayama, Yasuhiro; Inoue, Toru

2017-06-01

Melting experiments in a binary system MgO-MgSiO3 were performed up to 70 GPa using a CO2 laser heated diamond anvil cell. The quenched samples were polished and analyzed by a dualbeam focused ion beam (FIB) and a field emission scanning electron microscope (FE-SEM), respectively. The liquidus phase and the eutectic composition were determined on the basis of textual and chemical analyses of sample cross sections. Our experimental results show that the eutectic composition is the Si/Mg molar ratio of 0.76 at 35 GPa and it decreases with increasing pressure. Above 45 GPa, it becomes relatively constant at about 0.64-0.65 Si/Mg molar ratio. Using our experimental data collected at a wide pressure range up to 70 GPa together with previous experimental data, we have constructed a thermodynamic model of the eutectic composition of the MgO-MgSiO3 system. The eutectic composition extrapolated to the pressure and temperature conditions at the base of the mantle is about 0.64 Si/Mg molar ratio. The modeled eutectic composition is quite consistent with a previous prediction from ab initio calculations (de Koker et al. in Earth Planet Sci Lett 361:58-63, 2013), suggesting that the simple assumption of a non-ideal regular solution model can well describe the melting relation of the MgO-MgSiO3 system at high pressure. Our results show that the liquidus phase changes from MgO-periclase to MgSiO3-bridgmanite at 35 GPa for the simplified pyrolite composition ( 0.7 Si/Mg molar ratio), while MgSiO3-bridgmanite is the liquidus phase at the entire lower mantle conditions for the chondritic composition ( 0.84 Si/Mg molar ratio).

Sol-gel synthesis and structure of La2O3–CoO–SiO2 powders

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Lachezar Radev

2008-12-01

Full Text Available LaCoO3 powders are studied because they exhibit interesting electrical, magnetic and catalytic properties. In this paper, new synthesized La2O3-CoO-SiO2 powders with different quantity of silica were prepared via solgel method in aqua media, starting from metal nitrates with different chelating agents. The relation between the reaction in solution, crystallization pathway and morphology were discussed. In LaCoO3-SiO2 powders, depending on the content of SiO2 and the treatment temperature (700–1100°C, different crystalline phases (LaCoO3, Co2SiO4 and La9.31(SiO46O2 were observed with the crystallite sizes ranging from 50 to 100 nm. It was proved that chemical composition and nature of used additives has influence on the phase formation and structure of obtained nanomaterials.

The structure modification of Si-SiO2 irradiated by Fe+ ion

International Nuclear Information System (INIS)

Jin Tao; Ma Zhongquan; Guo Qi

1992-01-01

The effect of the iron ion implantation on the oxide surface and SiO 2 -Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS), and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe + ion implantation are also discussed and analyzed

Selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation.

Science.gov (United States)

Miao, Guang; Ye, Feiyan; Wu, Luoming; Ren, Xiaoling; Xiao, Jing; Li, Zhong; Wang, Haihui

2015-12-30

This study investigates selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation. The TiO2/SiO2 adsorbents were prepared and then characterized by N2 adsorption, X-ray diffraction and X-ray photoelectron spectroscopy. Adsorption isotherms, selectivity and kinetics of TiO2/SiO2 were measured in a UV built-in batch reactor. It was concluded that (a) with the employment of UV-irradiation, high organosulfur uptake of 5.12 mg/g was achieved on the optimized 0.3TiO2/0.7SiO2 adsorbent at low sulfur concentration of 15 ppmw-S, and its adsorption selectivity over naphthalene was up to 325.5; (b) highly dispersed TiO2 served as the photocatalytic sites for DBT oxidation, while SiO2 acted as the selective adsorption sites for the corresponding oxidized DBT using TiO2 as a promoter, the two types of active sites worked cooperatively to achieve the high adsorption selectivity of TiO2/SiO2; (c) The kinetic rate-determining step for the UV photocatalysis-assisted adsorptive desulfurization (PADS) over TiO2/SiO2 was DBT oxidation; (d) consecutive adsorption-regeneration cycles suggested that the 0.3TiO2/0.7SiO2 adsorbent can be regenerated by acetonitrile washing followed with oxidative air treatment. This work demonstrated an effective PADS approach to greatly enhance adsorption capacity and selectivity of thiophenic compounds at low concentrations for deep desulfurization under ambient conditions. Copyright © 2015 Elsevier B.V. All rights reserved.

Exploring the Phase Diagram SiO2-CO2 at High Pressures and Temperatures

Science.gov (United States)

Kavner, A.

2015-12-01

CO2 is an important volatile system relevant for planetary sciences and fundamental chemistry. Molecular CO2 has doubly bonded O=C=O units but high pressure-high temperature (HP-HT) studies have recently shown its transformation into a three-dimensional network of corner-linked [CO4] units analogous to the silica mineral polymorphs, through intermediate non-molecular phases. Here, we report P-V-T data on CO2-IV ice from time-of-flight neutron diffraction experiments, which allow determining the compressibility and thermal expansivity of this intermediate molecular-to-non-molecular phase.1 Aditionally, we have explored the SiO2-CO2 phase diagram and the potential formation of silicon carbonate compounds. New data obtained by laser-heating diamond-anvil experiments in CO2-filled microporous silica polymorphs will be shown. In particular, these HP-HT experiments explore the existence of potential CO2/SiO2 compounds with tetrahedrally-coordinated C/Si atoms by oxygens, which are predicted to be stable (or metastable) by state-of-the-art ab initio simulations.2,3 These theoretical predictions were supported by a recent study that reports the formation of a cristobalite-type Si0.4C0.6O2 solid solution at high-pressures and temperatures, which can be retained as a metastable solid down to ambient conditions.4 Entirely new families of structures could exist based on [CO4]4- units in various degrees of polymerisation, giving rise to a range of chain, sheet and framework solids like those found in silicate chemistry. References[1] S. Palaich et al., Am. Mineral. Submitted (2015) [2] A. Morales-Garcia et al., Theor. Chem. Acc. 132, 1308 (2013) [3] R. Zhou et al., Phys. Rev. X, 4, 011030 (2014) [4] M. Santoro et al. Nature Commun. 5, 3761 (2014)

Sol–gel hybrid membranes loaded with meso/macroporous SiO2, TiO2–P2O5 and SiO2–TiO2–P2O5 materials with high proton conductivity

International Nuclear Information System (INIS)

Castro, Yolanda; Mosa, Jadra; Aparicio, Mario; Pérez-Carrillo, Lourdes A.; Vílchez, Susana; Esquena, Jordi; Durán, Alicia

2015-01-01

In this work, highly conductive hybrid organic–inorganic membranes loaded with SiO 2 , TiO 2 –P 2 O 5 and SiO 2 –TiO 2 –P 2 O 5 meso/macroporous particles were prepared via a sol–gel process. Meso/macroporous particles were incorporated to hybrid membranes, for improving water retention and enhancing electrochemical performance. These particles with a polymodal pore size distribution were prepared by templating in highly concentrated emulsions, the particles showed a specific surface area between 50 m 2 /g (TiO 2 –P 2 O 5 ) and 300 m 2 /g (SiO 2 –TiO 2 –P 2 O 5 ). The particles were dispersed in a hybrid silica sol and further sprayed onto glass paper. The films were polymerized and sintered; those loaded with meso/macroporous particles had a homogenous distribution. High temperature proton conductivity measurements confirmed a high water retention. Conductivity of these materials is higher than that of Nafion ® at higher temperatures (120 °C) (2·10 −2  S/cm). This study provides processing guideline to achieve hybrid electrolytes for efficient conduction of protons due to their high surface area and porous structure. - Highlights: • Hybrid electrolyte with meso/macroporous particles were synthesized by sol–gel. • Depositions of hybrid solutions by spraying onto glass substrates were performed. • Proton conductivity was evaluated as a function of composition and porous structure

Synthesis And Characterization Of SiO2, SnO2 And TiO2 Metal Oxide Shells Covering Cu2O Particles

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Yu Ri

2015-06-01

Full Text Available In this work is described a means of improving the chemical stability of Cu2O@SiO2, Cu2O@SnO2 and Cu2O@TiO2 materials. The SiO2, SnO2 and TiO2 coated samples were stable from pH 3 to pH 10 for up to seven days. To determine the stability of the coated nanoparticles, and their colloidal solutions under acidic and basic conditions, colloidal nanoparticle solutions with various pH values were prepared and monitored over time. Details of the effect of variations in pH on the phase stability of core-shell type Cu2O were characterized using transmission electron microscopy and X-ray diffraction.

Microwave absorption properties and mechanism of cagelike ZnO /SiO2 nanocomposites

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Cao, Mao-Sheng; Shi, Xiao-Ling; Fang, Xiao-Yong; Jin, Hai-Bo; Hou, Zhi-Ling; Zhou, Wei; Chen, Yu-Jin

2007-11-01

In this paper, cagelike ZnO /SiO2 nanocomposites were prepared and their microwave absorption properties were investigated in detail. Dielectric constants and losses of the pure cagelike ZnO nanostructures were measured in a frequency range of 8.2-12.4GHz. The measured results indicate that the cagelike ZnO nanostructures are low-loss material for microwave absorption in X band. However, the cagelike ZnO /SiO2 nanocomposites exhibit a relatively strong attenuation to microwave in X band. Such strong absorption is related to the unique geometrical morphology of the cagelike ZnO nanostructures in the composites. The microcurrent network can be produced in the cagelike ZnO nanostructures, which contributes to the conductive loss.

Fabrication of graphene oxide decorated with Fe3O4@SiO2 for immobilization of cellulase

Science.gov (United States)

Li, Yue; Wang, Xiang-Yu; Jiang, Xiao-Ping; Ye, Jing-Jing; Zhang, Ye-Wang; Zhang, Xiao-Yun

2015-01-01

Fe3O4@SiO2-graphene oxide (GO) composites were successfully fabricated by chemical binding of functional Fe3O4@SiO2 and GO and applied to immobilization of cellulase via covalent attachment. The prepared composites were further characterized by transmission electron microscopy and Fourier transform infrared spectroscopy. Fe3O4 nanoparticles (NPs) were monodisperse spheres with a mean diameter of 17 ± 0.2 nm. The thickness of SiO2 layer was calculated as being 6.5 ± 0.2 nm. The size of Fe3O4@SiO2 NPs was 24 ± 0.3 nm, similar to that of Fe3O4@SiO2-NH2. Fe3O4@SiO2-GO composites were synthesized by linking of Fe3O4@SiO2-NH2 NPs to GO with the catalysis of EDC and NHS. The prepared composites were used for immobilization of cellulase. A high immobilization yield and efficiency of above 90 % were obtained after the optimization. The half-life of immobilized cellulase (722 min) was 3.34-fold higher than that of free enzyme (216 min) at 50 °C. Compared with the free cellulase, the optimal temperature of the immobilized enzyme was not changed; but the optimal pH was shifted from 5.0 to 4.0, and the thermal stability was enhanced. The immobilized cellulase could be easily separated and reused under magnetic field. These results strongly indicate that the cellulase immobilized onto the Fe3O4@SiO2-GO composite has potential applications in the production of bioethanol.

Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

KAUST Repository

Lim, Namsoo

2018-02-28

A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

Surface reactivity and hydroxyapatite formation on Ca5MgSi3O12 ceramics in simulated body fluid

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Xu, Jian; Wang, Yaorong; Huang, Yanlin; Cheng, Han; Seo, Hyo Jin

2017-11-01

In this work, the new calcium-magnesium-silicate Ca5MgSi3O12 ceramic was made via traditional solid-state reaction. The bioactivities were investigated by immerging the as-made ceramics in simulated body fluid (SBF) for different time at body temperature (37 °C). Then the samples were taken to measure X-ray powder diffraction (XRD), Scanning electron microscopy (SEM), X-ray energy-dispersive spectra (EDS), and Fourier transform infrared spectroscopy (FT-IR) measurements. The bone-like hydroxyapatite nanoparticles formation was observed on the ceramic surfaces after the immersion in SBF solutions. Ca5MgSi3O12 ceramics possess the Young's modulus and the bending strength and of 96.3 ± 1.2 GPa and 98.7 ± 2.3 MPa, respectively. The data suggest that Ca5MgSi3O12 ceramics can quickly induce HA new layers after soaking in SBF. Ca5MgSi3O12 ceramics are potential to be used as biomaterials for bone-tissue repair. The cell adherence and proliferation experiments are conducted confirming the reliability of the ceramics as a potential candidate.

Characterization of modified SiC@SiO2 nanocables/MnO2 and their potential application as hybrid electrodes for supercapacitors.

Science.gov (United States)

Zhang, Yujie; Chen, Junhong; Fan, Huili; Chou, Kuo-Chih; Hou, Xinmei

2015-12-14

In this research, we demonstrate a simple route for preparing SiC@SiO2 core-shell nanocables and furthermore obtain SiC@SiO2 nanocables/MnO2 as hybrid electrodes for supercapacitors using various modified methods. The modified procedure consists of mild modifications using sodium hydroxide as well as UV light irradiation and deposition of MnO2. The morphology and microstructural characteristics of the composites are investigated using XRD, XPS, FE-SEM with EDS and TEM. The results indicate that the surfaces of modified SiC@SiO2 nanocables are uniformly coated with a MnO2 thin layer. The electrochemical behaviors of the hybrid electrodes are systematically measured in a three-electrode system using cyclic voltammetry, galvanostatic charge/discharge and electrochemical impedance spectroscopy. The resultant electrode presents a superb charge storage characteristic with a large specific capacitance of 276.3 F g(-1) at the current density of 0.2 A g(-1). Moreover, the hybrid electrode also displays a long cycle life with a good capacitance retention (∼92.0%) after 1000 CV cycles, exhibiting a promising potential for supercapacitors.

Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment.

Science.gov (United States)

Kim, Kwangeun; Ryu, Jae Ha; Kim, Jisoo; Cho, Sang June; Liu, Dong; Park, Jeongpil; Lee, In-Kyu; Moody, Baxter; Zhou, Weidong; Albrecht, John; Ma, Zhenqiang

2017-05-24

Understanding the band bending at the interface of GaN/dielectric under different surface treatment conditions is critically important for device design, device performance, and device reliability. The effects of ultraviolet/ozone (UV/O 3 ) treatment of the GaN surface on the energy band bending of atomic-layer-deposition (ALD) Al 2 O 3 coated Ga-polar GaN were studied. The UV/O 3 treatment and post-ALD anneal can be used to effectively vary the band bending, the valence band offset, conduction band offset, and the interface dipole at the Al 2 O 3 /GaN interfaces. The UV/O 3 treatment increases the surface energy of the Ga-polar GaN, improves the uniformity of Al 2 O 3 deposition, and changes the amount of trapped charges in the ALD layer. The positively charged surface states formed by the UV/O 3 treatment-induced surface factors externally screen the effect of polarization charges in the GaN, in effect, determining the eventual energy band bending at the Al 2 O 3 /GaN interfaces. An optimal UV/O 3 treatment condition also exists for realizing the "best" interface conditions. The study of UV/O 3 treatment effect on the band alignments at the dielectric/III-nitride interfaces will be valuable for applications of transistors, light-emitting diodes, and photovoltaics.

A VUV photoionization measurement and ab-initio calculation of the ionization energy of gas phase SiO2

Energy Technology Data Exchange (ETDEWEB)

Kostko, Oleg; Ahmed, Musahid; Metz, Ricardo B.

2008-12-05

In this work we report on the detection and vacuum-ultraviolet (VUV) photoionization of gas phase SiO2 generated in situ via laser ablation of silicon in a CO2 molecular beam. The resulting species are investigated by single photon ionization with tunable VUV synchrotron radiation and mass analyzed using reflectron mass spectrometry. Photoionization efficiency (PIE) curves are recorded for SiO and SiO2 and ionization energy estimates are revealed from such measurements. A state-to-state ionizationenergy of 12.60 (+-0.05) eV is recorded by fitting two prominent peaks in the PIE curve for the following process: 1SUM O-Si-O --> 2PRODg [O-Si-O]+. Electronic structure calculations aid in the interpretation of the photoionization process and allow for identification of the symmetric stretch of 2PRODg [O-Si-O]+ which is observed in the PIE spectrum to be 0.11 eV (890 cm-1) above the ground state of the cation and agrees with the 892 cm-1 symmetric stretch frequency calculated at the CCSD(T)/aug-cc-pVTZ level.

Gels and gel-derived glasses in the system Na2O-B2O3-SiO2

Science.gov (United States)

Mukherjee, S. P.

1983-01-01

The containerless melting of high-purity multicomponent homogeneous gels and gel monoliths offers a unique approach to making ultrapure multicomponent optical glasses in the reduced gravity environment of space. Procedures for preparing and characterizing gels and gel-derived glasses in the system Na2O-B2O3-SiO2 are described. Preparation is based on the polymerization reactions of alkoxysilane with trimethyl borate or boric acid and a suitable sodium compound. The chemistry of the gelling process is discussed in terms of process parameters and the gel compositions. The physicochemical nature of gels prepared by three different procedures was found to be significantly different. Infrared absorption spectra indicate finite differences in the molecular structures of the different gels. The melting of the gel powders and the transformation of porous gel monoliths to transparent 'glass' without melting are described.

Anomalous defect processes in Si implanted amorphous SiO2, II

International Nuclear Information System (INIS)

Fujita, Tetsuo; Fukui, Minoru; Okada, Syunji; Shimizu-Iwayama, Tsutomu; Hioki, Tatsumi; Itoh, Noriaki

1994-01-01

Aanomalous features of the defects in Si implanted amorphous SiO 2 are reported. The numbers of E 1 prime centers and B 2 centers are found to increase monotonically with implanted Si dose, in contrast to the saturating feature of these numbers in Ar implanted samples. Moreover, when H ions are implanted in amorphous SiO 2 predamaged by Si implantation, both of the density and the number of E 1 prime centers increase and they reach a constant value at a small H dose. We point out that these anomalies can be explained in terms of the difference in the cross-section for defect annihilation in the specimens implanted with Si ions and other ions, in accordance with the homogeneous model proposed by Devine and Golanski. We consider that the main mechanism of defect annihilation is the recombination of an E 1 prime center and an interstitial O, which is stabilized by an implanted Si, reducing the cross-section in Si-implanted specimens. ((orig.))

Mo/Si multilayers with enhanced TiO II- and RuO II-capping layers

Science.gov (United States)

Yulin, Sergiy; Benoit, Nicolas; Feigl, Torsten; Kaiser, Norbert; Fang, Ming; Chandhok, Manish

2008-03-01

The lifetime of Mo/Si multilayer-coated projection optics is one of the outstanding issues on the road of commercialization of extreme-ultraviolet lithography (EUVL). The application of Mo/Si multilayer optics in EUVL requires both sufficient radiation stability and also the highest possible normal-incidence reflectivity. A serious problem of conventional high-reflective Mo/Si multilayers capped by silicon is the considerable degradation of reflective properties due to carbonization and oxidation of the silicon surface layer under exposure by EUV radiation. In this study, we focus on titanium dioxide (TiO II) and ruthenium dioxide (RuO II) as promising capping layer materials for EUVL multilayer coatings. The multilayer designs as well as the deposition parameters of the Mo/Si systems with different capping layers were optimized in terms of maximum peak reflectivity at the wavelength of 13.5 nm and longterm stability under high-intensive irradiation. Optimized TiO II-capped Mo/Si multilayer mirrors with an initial reflectivity of 67.0% presented a reflectivity drop of 0.6% after an irradiation dose of 760 J/mm2. The reflectivity drop was explained by the partial oxidation of the silicon sub-layer. No reflectivity loss after similar irradiation dose was found for RuO II-capped Mo/Si multilayer mirrors having initial peak reflectivity of 66%. In this paper we present data on improved reflectivity of interface-engineered TiO II- and RuO II-capped Mo/Si multilayer mirrors due to the minimization of both interdiffusion processes inside the multilayer stack and absorption loss in the oxide layer. Reflectivities of 68.5% at the wavelength of 13.4 nm were achieved for both TiO II- and RuO II-capped Mo/Si multilayer mirrors.

Synthesis and characterization of Al2O3 and SiO2 films with fluoropolymer content using rf-plasma magnetron sputtering technique

International Nuclear Information System (INIS)

Islam, Mohammad; Inal, Osman T.

2008-01-01

Pure and molecularly mixed inorganic films for protection against atomic oxygen in lower earth orbit were prepared using radio-frequency (rf) plasma magnetron sputtering technique. Alumina (Al 2 O 3 ) and silica (SiO 2 ) films with average grain size in the range of 30-80 nm and fully dense or dense columnar structure were synthesized under different conditions of pressure and power. Simultaneous oxide sputtering and plasma polymerization (PP) of hexafluoropropylene (HFP) led to the formation of molecularly mixed films with fluoropolymer content. The degree of plasma polymerization was strongly influenced by total chamber pressure and the argon to HFP molar ratio (n Ar /n M ). An order of magnitude increase in pressure due to argon during codeposition changed the plasma-polymerization mechanism from radical-chain- to radical-radical-type processes. Subsequently, a shift from linear CH 2 group based chain polymerization to highly disordered fluoropolymer content with branching and cross-linking was observed. Fourier transform infrared spectroscopy studies revealed chemical interaction between depositing SiO 2 and PP-HFP through appearance of absorption bands characteristic of Si-F stretching and expansion of SiO 2 network. The relative amount and composition of plasma-polymerized fluoropolymer in such films can be controlled by changing argon to HFP flow ratio, total chamber pressure, and applied power. These films offer great potential for use as protective coatings in aerospace applications

Glass-ceramic materials of system MgO-Al{sub 2}O{sub 3}-SiO{sub 2} from rice husk ash; Materiales vitroceramicos del sistema MgO-Al2O3-SiO2 a partir de ceniza de cascara de arroz

Energy Technology Data Exchange (ETDEWEB)

Martin, M. I.; Rincon, J. M.; Andreola, F.; Barbieri, L.; Bondioli, F.; Lancellotti, I.; Romero, M.

2011-07-01

This wok shows the results of a valorisation study to use rice husk ash as raw material to develop glass-ceramic materials. An original glass has been formulated in the base system MgO-Al{sub 2}O{sub 3}-SiO{sub 2} with addition of B{sub 2}O{sub 3} and Na{sub 2}O to facilitate the melting and poring processes. Glass characterization was carried out by determining its chemical composition. Sintering behaviour has been examined by Hot Stage Microscopy (HSM). Thermal stability and crystallization mechanism have been studied by Differential Thermal Analysis (DTA). Mineralogy analyses of the glass-ceramic materials were carried out using X-ray Diffraction (XRD). Results show that it is possible to use ash rice husk to produce glass-ceramic materials by a sinter crystallization process, with nepheline (Na{sub 2}O-Al{sub 2}O{sub 3}-SiO{sub 2}) as major crystalline phase in the temperature interval 700-950 degree centigrade and forsterite (2MgO-SiO{sub 2}) at temperatures above 950 degree centigrade. (Author) 15 refs.

Crystallization behaviour of nanostructured hybrid SiO2-TiO2 gel glasses to nanocomposites.

Science.gov (United States)

Tsvetelina, Gerganova; Yordanka, Ivanova; Yuliya, Vueva; Miranda, Salvado Isabel M; Helena, Fernandes Maria

2010-04-01

The crystallization behaviour of hybrid SiO2-TiO2 nanocomposites derived from titanosiloxanes by sol-gel method has been investigated depending on the type of siloxane precursor and the pirolysis temperature. The resulting hybrid titanosiloxanes, crosslinked with trimethylsilil isocyanate (nitrogen-modified) or methyltrietoxisilane (carbon-modified), were pirolyzed in an inert atmosphere in the temperature range between 600 to 1100 degrees C in order to form C-(N)-Si-O-TiO2 nanocomposites. By means of XRD, FTIR, 29Si NMR, SEM, TEM and AFM investigations have been established that the transformation of the nanostructured SiO2-TiO2 hybrid materials into nanocomposites as well as the crystalline size depend on the titanium content and the type of cross-linking agents used in the synthesizes.

Nanoporous SiO{sub 2}/TiO{sub 2} coating with enhanced interfacial compatibility for orthopedic applications

Energy Technology Data Exchange (ETDEWEB)

Zhao, Xiaobing, E-mail: zhaoxiaobing00@163.com [School of Materials Science and Engineering, Changzhou University, Changzhou 213164 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 (China); Jiangsu Key Laboratory of Materials Surface Science and Technology, Changzhou University, Changzhou 213164 (China); Cao, Hengchun; You, Jing; Cheng, Xingbao [School of Materials Science and Engineering, Changzhou University, Changzhou 213164 (China); Xie, Youtao [Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 (China); Cao, Huiliang [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Liu, Xuanyong, E-mail: xyliu@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

2015-11-15

Graphical abstract: - Highlights: • The SiO{sub 2}/TiO{sub 2} coatings were fabricated on the cp-Ti substrates by plasma spraying. • Nanoporous topography was formed on SiO{sub 2}/TiO{sub 2} coating by HF-hydrothermal etching. • The hydrothermal conditions had important effects on the nanoporous topographies. • Nanoporous SiO{sub 2}/TiO{sub 2} coating exhibited enhanced cytocompatibility. - Abstract: Topographic modification in nanoscale is one of the most often used strategies to enhance the interfacial biocompatibility of implant materials. The aim of this work is to produce SiO{sub 2}/TiO{sub 2} coatings with nanoporous structures and favorable biological properties by atmospheric plasma spraying technology and subsequently hydrothermal etching method in hydrogen fluoride solution. The effects of hydrothermal time and temperature on the microstructures and osteoblast behavior of the SiO{sub 2}/TiO{sub 2} coatings were investigated. Results demonstrated that the as-sprayed SiO{sub 2}/TiO{sub 2} coating was mainly composed of rutile and quartz phases. After etching, nanoporous topographies were formed on the surface of the coatings and the hydrothermal parameters had important influences on the size and shape of the pores. The interconnected network pores on the coating surface could only produce at the appropriate hydrothermal conditions (the hydrothermal time and temperature were 60 min and 100 °C, respectively). Compared to TiO{sub 2} and SiO{sub 2}/TiO{sub 2} coatings, nanoporous SiO{sub 2}/TiO{sub 2} coatings could enhance osteoblast adhesion and promote cell proliferation. The results suggested the potential application of the porous coatings for enhancing the biological performance of the currently used dental and orthopedic implant materials.

Gibbs energies of formation of zircon (ZrSiO4), thorite (ThSiO4), and phenacite (Be2SiO4)

International Nuclear Information System (INIS)

Schuiling, R.D.; Vergouwen, L.; Rijst, H. van der

1976-01-01

Zircon, thorite, and phenacite are very refractory compounds which do not yield to solution calorimetry. In In order to obtain approximate Gibbs energies of formation for these minerals, their reactions with a number of silica-undersaturated compounds (silicates or oxides) were studied. Conversely baddeleyite (ZrO 2 ), thorianite (ThO 2 ), and bromellite (BeO) were reacted with the appropriate silicates. As the Gibbs energies of reaction of the undersaturated compounds with SiO 2 are known, the experiments yield the following data: Δ G 298 , 1 /sub bar/ 0 = -459.02 +- 1.04 kcal for zircon, -489.67 +- 1.04 for thorite, and -480.20 +- 1.01 for phenacite

Ion induced intermixing and consequent effects on the leakage currents in HfO{sub 2}/SiO{sub 2}/Si systems

Energy Technology Data Exchange (ETDEWEB)

Manikanthababu, N.; Saikiran, V.; Pathak, A.P.; Rao, S.V.S.N. [University of Hyderabad, School of Physics, Hyderabad (India); Chan, T.K.; Vajandar, S.; Osipowicz, T. [National University of Singapore, Department of Physics, Centre for Ion Beam Applications (CIBA), Singapore (Singapore)

2017-05-15

Atomic layer deposited (ALD) samples with layer stacks of HfO{sub 2} (3 nm)/SiO{sub 2} (0.7 nm)/Si were subjected to 120 MeV Au ion irradiation at different fluences to study intermixing effects across the HfO{sub 2}/SiO{sub 2} interface. High-resolution Rutherford backscattering spectrometry (HRBS) and X-ray reflectivity (XRR) measurements confirm an increase in the interlayer thickness as a result of SHI induced intermixing effects. Current-voltage (I-V) measurements reveal an order of magnitude difference in the leakage current density between the pristine and irradiated samples. This can be explained by considering the increased physical thickness of interlayer (HfSiO). Furthermore, the samples were subjected to rapid thermal annealing (RTA) process to analyze annealing kinetics. (orig.)

Synthesis of ceramic powders of La9,56 (SiO4)6O2,34 and La9,8Si5,7MgO,3O26,4 by modified sol-gel process

International Nuclear Information System (INIS)

Lira, Sabrina Lopes; Paiva, Mayara Rafaela Soares; Misso, Agatha Matos; Elias, Daniel Ricco; Yamagata, Chieko

2012-01-01

Lanthanum silicate oxyapatite materials are promising for application as electrolyte in solid oxide fuel cells because of high ionic conductivity at temperatures between 600 deg C and 800 deg C. In this work, oxyapatites with the composition La 9,56 (SiO 4 ) 6 O 2,34 , and La 9,8 Si 5,7 Mg 0,3 O 26,4 were synthesized by using the sol-gel method, followed by precipitation. Initially, the gel of silica was synthesized from sodium silicate solution, by acid catalysis using lanthanum and magnesium chloride solution. Then, the La and Mg hydroxides were precipitated with NaOH in the gel. The powders were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and measurements of specific surface area. The crystalline oxyapatite phase of La 9,56 (SiO 4 ) 6 O 2,34 , and was La 9,8 Si 5,7 Mg 0,3 O 26,4 obtained by calcination at 900 deg C for 2 and 1h respectively (author)

Ultrathin Microporous SiO2 Membranes Photodeposited on Hydrogen Evolving Catalysts Enabling Overall Water Splitting

KAUST Repository

Bau, Jeremy A.; Takanabe, Kazuhiro

2017-01-01

Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.

Ultrathin Microporous SiO2 Membranes Photodeposited on Hydrogen Evolving Catalysts Enabling Overall Water Splitting

KAUST Repository

Bau, Jeremy A.

2017-10-17

Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.

Ethanol-to-Butadiene Conversion over SiO2-MgO Catalysts: Synthesis-Structure-Performance Relationships

NARCIS (Netherlands)

Angelici, C.

2015-01-01

The work presented in this PhD Thesis provides new insights into the underlying reasons that make SiO2-MgO materials excellent catalysts for the ethanol-to-butadiene Lebedev process. In particular, the preparation technique of choice affects the structural properties of the resulting SiO2-MgO

Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements

Science.gov (United States)

Truyen, Nguyen Xuan; Ohta, Akio; Makihara, Katsunori; Ikeda, Mitsuhisa; Miyazaki, Seiichi

2018-01-01

The control of chemical composition and bonding features at a SiO2/GaN interface is a key to realizing high-performance GaN power devices. In this study, an ∼5.2-nm-thick SiO2 film has been deposited on an epitaxial GaN(0001) surface by remote O2-plasma-enhanced chemical vapor deposition (O2-RPCVD) using SiH4 and Ar/O2 mixture gases at a substrate temperature of 500 °C. The depth profile of chemical structures and electronic defects of the O2-RPCVD SiO2/GaN structures has been evaluated from a combination of SiO2 thinning examined by X-ray photoelectron spectroscopy (XPS) and the total photoelectron yield spectroscopy (PYS) measurements. As a highlight, we found that O2-RPCVD is effective for fabricating an abrupt SiO2/GaN interface.

Self-aligned indium–gallium–zinc oxide thin-film transistors with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers

Energy Technology Data Exchange (ETDEWEB)

Chen, Rongsheng, E-mail: rschen@ust.hk; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

2014-08-01

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm{sup 2}/Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10{sup 6}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress.

Fabrication of graphene oxide decorated with Fe3O4@SiO2 for immobilization of cellulase

International Nuclear Information System (INIS)

Li, Yue; Wang, Xiang-Yu; Jiang, Xiao-Ping; Ye, Jing-Jing; Zhang, Ye-Wang; Zhang, Xiao-Yun

2015-01-01

Fe 3 O 4 @SiO 2 –graphene oxide (GO) composites were successfully fabricated by chemical binding of functional Fe 3 O 4 @SiO 2 and GO and applied to immobilization of cellulase via covalent attachment. The prepared composites were further characterized by transmission electron microscopy and Fourier transform infrared spectroscopy. Fe 3 O 4 nanoparticles (NPs) were monodisperse spheres with a mean diameter of 17 ± 0.2 nm. The thickness of SiO 2 layer was calculated as being 6.5 ± 0.2 nm. The size of Fe 3 O 4 @SiO 2 NPs was 24 ± 0.3 nm, similar to that of Fe 3 O 4 @SiO 2 –NH 2 . Fe 3 O 4 @SiO 2 –GO composites were synthesized by linking of Fe 3 O 4 @SiO 2 –NH 2 NPs to GO with the catalysis of EDC and NHS. The prepared composites were used for immobilization of cellulase. A high immobilization yield and efficiency of above 90 % were obtained after the optimization. The half-life of immobilized cellulase (722 min) was 3.34-fold higher than that of free enzyme (216 min) at 50 °C. Compared with the free cellulase, the optimal temperature of the immobilized enzyme was not changed; but the optimal pH was shifted from 5.0 to 4.0, and the thermal stability was enhanced. The immobilized cellulase could be easily separated and reused under magnetic field. These results strongly indicate that the cellulase immobilized onto the Fe 3 O 4 @SiO 2 –GO composite has potential applications in the production of bioethanol

Passivation of pigment-grade TiO2 particles by nanothick atomic layer deposited SiO2 films

International Nuclear Information System (INIS)

King, David M; Liang Xinhua; Weimer, Alan W; Burton, Beau B; Akhtar, M Kamal

2008-01-01

Pigment-grade TiO 2 particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO 2 and Al 2 O 3 layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO 2 films were deposited using tris-dimethylaminosilane (TDMAS) and H 2 O 2 at 500 deg. C. Trimethylaluminum and water were used as precursors for Al 2 O 3 ALD at 177 deg. C. The photocatalytic activity of anatase pigment-grade TiO 2 was decreased by 98% after the deposition of 2 nm SiO 2 films. H 2 SO 4 digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO 2 digest rate was 40 times faster for uncoated TiO 2 than SiO 2 coated over a 24 h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H 2 O 2 chemistry can deposit high quality, fully dense SiO 2 films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO 2 particles

Enhanced the hydrophobic surface and the photo-activity of TiO2-SiO2 composites

Science.gov (United States)

Wahyuni, S.; Prasetya, A. T.

2017-02-01

The aim of this research is to develop nanomaterials for coating applications. This research studied the effect of various TiO2-SiO2 composites in acrylic paint to enhance the hydrophobic properties of the substrate. Titanium dioxide containing silica in the range 20-35 mol% has been synthesized using sol-gel route. The XRD’s spectra show that increasing SiO2 content in the composite, decreasing its crystalline properties but increasing the surface area. TiO2-SiO2 composite was dispersed in acrylic paint in 2% composition by weight. The largest contact angle was 70, which produced by the substrate coated with TS-35-modified acrylic paint. This study also investigated the enhanced photo-activity of TiO2-SiO2 modified with poly-aniline. The XRD spectra show that the treatment does not change the crystal structure of TiO2. The photo-activity of the composite was evaluated by degradation of Rhodamine-B with visible light. The best performance of the degradation process was handled by the composite treated with 0.1mL anilines per gram of TiO2-SiO2 composite (TSP-A). On the other side, the contact angle 70 has not shown an excellent hydrophobic activity. However, the AFM spectra showed that nanoroughness has started to form on the surface of acrylic paint modified with TiO2-SiO2 than acrylic alone.

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

Directory of Open Access Journals (Sweden)

Wei-Ting eLai

2016-02-01

Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

Low temperature synthesis of non-crystaline solids of the system SrO-SiO2

International Nuclear Information System (INIS)

Yamane, M.; Kojima, T.

1981-01-01

Non-crystalline solids within the liquid-liquid immiscibility region in the system SrO-SiO 2 have been prepared from a gel obtained by the hydrolysis of silicon tetramethoxide with an aqueous solution of strontium nitrate. The gel which was porous and translucent at room temperature increased in transparency with heating due to the collapse of micropores until it became completely clear. The gel became opaque again due to the precipitation of α-quartz at higher temperatures. The critical temperatures below which clear solids were obtained fell on a line connecting the glass transition temperatures of vitreous silica and those of SrO-SiO 2 glass prepared by melting. The density and refractive index of the pore-free, clear glassy solid, changed continuously with the SrO content along lines connecting those of vitreous silica and SrO-SiO 2 glasses of high SrO content prepared by melting. The maximum amount of Sr 2+ which could be introduced using an aqueous solution as the starting material corresponded to a composition of 10 SrO x 90 SiO 2 by weight. (orig.)

Preparation of Si and O co-solution strengthened Ti alloys by using rice husks as SiO2 resource and quantitative descriptions on their strengthening effects

Science.gov (United States)

Jia, Lei; Chen, Jiang-xian; Lu, Zhen-lin; Li, Shu-feng; Umeda, Junko; Kondoh, Katsuyoshi

2018-04-01

Ti alloys strengthened by both Si and O solutes were prepared by powder metallurgy method from pure Ti and amorphous SiO2 powder obtained by combusting rice husks. At the same time, Ti alloys singly strengthened by Si or O were also prepared for studying the strengthening effect of Si and O solutes. Results showed that amorphous SiO2 powder originated from rice husks could almost fully dissolve into pure Ti matrix when the content was not higher than 1.0 wt%, while higher content of SiO2 addition resulted in the formation of Ti5Si3 intermetallics. Si and O elements leaded to negative and positive distortion of Ti lattice, and the influencing degrees were ‑0.02 and +0.014 Å/wt% for lattice constant a, while ‑0.05 and +0.046 Å/wt% for constant c, respectively. Solid solution of Si and O would also result in the increase of hardness, which was 98.5 and 209.43 HV/wt%, respectively. When Si and O were co-exsited in Ti matrix, the negative and positive distortion cancelled each other, while the strengthening effect did not cancel but enhance each other.

Redetermination of clinobaryl-ite, BaBe(2)Si(2)O(7).

Science.gov (United States)

Domizio, Adrien J Di; Downs, Robert T; Yang, Hexiong

2012-10-01

Clinobaryl-ite, ideally BaBe(2)Si(2)O(7) (chemical name barium diberyllium disilicate), is a sorosilicate mineral and dimorphic with baryl-ite. It belongs to a group of compounds characterized by the general formula BaM(2+) (2)Si(2)O(7), with M(2+) = Be, Mg, Fe, Mn, Zn, Co, or Cu, among which the Be-, Fe-, and Cu-members have been found in nature. The crystal structure of clinobaryl-ite has been re-examined in this study based on single-crystal X-ray diffraction data collected from a natural sample from the type locality (Khibiny Massif, Kola Peninsula, Russia). The structure of clinobaryl-ite can be considered as a framework of BeO(4) and SiO(4) tetra-hedra, with one of the O atoms coordinated to two Be and one Si, one coordinated to two Si, and two O atoms coordinated to one Si and one Be atom. The BeO(4) tetra-hedra share corners, forming chains parallel to the c axis, which are inter-linked by the Si(2)O(7) units oriented parallel to the a axis. The Ba(2+) cations (site symmetry m..) are in the framework channels and are coordinated by eleven O atoms in form of an irregular polyhedron. The Si-O(br) (bridging O atom, at site symmetry m..) bond length, the Si-O(nbr) (non-bridging O atoms) bond lengths, and the Si-O-Si angle within the Si(2)O(7) unit are in marked contrast to the corresponding values determined in the previous study [Krivovichev et al. (2004 ▶). N. Jb. Miner. Mh. pp. 373-384].

Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

International Nuclear Information System (INIS)

Zhang, T. C.; Guo, Y.; Mei, Z. X.; Gu, C. Z.; Du, X. L.

2009-01-01

Exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of ∼10 4 at ±2 V and a dark current of 0.5 nA at a reverse bias of -2 V.The photoresponse spectrum indicates a visible-blind UV detectivity of our devices with a sharp cut off at the wavelength of 378 nm and a high UV/visible rejection ratio. The key role of the middle insulating MgO layer, as a barrier layer for minority carrier transport, has been demonstrated

Electronic states of SiO2-MxOy (MxOy=P205, TiO2 and ZrO2) glasses

Energy Technology Data Exchange (ETDEWEB)

Kowada, Y [Hyogo Univ. of Teacher Education, Hyogo (Japan); Adachi, H [Kyoto Univ. (Japan). Faculty of Engineering; Minami, T [Univ. of Osaka Prefecture, Osaka (Japan). Faculty of Engineering

1993-12-01

Using the sol-gel method the surface of metal and glass substrates can be modified. For example, stainless steel sheets coated with the SiO2-ZrO2 glass films have higher resistance to corrosion and oxidation. The coating films contain high concentration of alkali ions diffusing from the glass substrates. It suggests that the sodium ions are trapped strongly within the coating films and are blocked to further diffuse to the surface. This behavior must be associated with the chemical bonding around the sodium ions in the SiO2-TiO2 and SiO2-ZrO2 films. For better understanding of the chemical bonding in the glasses, the electronic states of the SiO2-MxOy glasses were calculated by means of the DV-Xa cluster method. In this paper, the calculation method is explained, the results are discussed and the conclusion is stated. 17 refs., 6 figs.

Crystallization and chemical durability of glasses in the system Bi2O3-SiO2

International Nuclear Information System (INIS)

Fredericci, C.

2011-01-01

The crystallization of the Bi 2 O 3 -SiO 2 -TiO 2 -Al 2 O 3 -Na 2 O-K 2 O and Bi 2 O 3 -SiO 2 -ZnO-Al 2 O 3 -B 2 O 3 -Na 2 O glasses was studied using glass samples prepared by traditional melt-quench method. Differential thermal analysis (DTA) curves suggested that surface crystallization played a major role in the crystallization of the glass samples. X-ray diffraction (XRD) analysis revealed the crystallization of bismuth silicate for both glasses and bismuth silicate and zinc silicate for the glass containing ZnO. Through scanning electron microscopy (MEV) and energy dispersive spectroscopy (EDS), it was possible to observe that the crystals of zinc silicate (Zn 2 SiO 4 ) were readily attacked by hot 0,1 N sulfuric acid, whereas bismuth silicate crystals were more resistant to acidic attack etching. (author)

PENGUJIAN AKTIVITAS KOMPOSIT Fe2O3-SiO2 SEBAGAI FOTOKATALIS PADA FOTODEGRADASI 4-KLOROFENOL (The Activity Test of Fe2O3-SiO2 Composite As Photocatalyst on 4-Chlorophenol Photodegradation

Directory of Open Access Journals (Sweden)

Eko Sri Kunarti

2009-03-01

Full Text Available ABSTRAK  Pada penelitian ini telah dilakukan pengujian aktivitas komposit Fe2O3-SiO2 sebagai fotokatalis pada fotodegradasi 4-klorofenol. Penelitian diawali dengan preparasi dan karakterisasi fotokatalis Fe2O3-SiO2. Preparasi dilakukan dengan metode sol-gel pada temperatur kamar menggunakan tetraetil ortosilikat (TEOS dan besi (III nitrat sebagai prekursor diikuti dengan perlakuan termal pada temperature 500 oC. Karakterisasi dilakukan dengan metode spektrometri inframerah, difraksi sinar-X dan spektrometri fluoresensi sinar-X. Uji aktivitas komposit untuk fotodegradasi 4-klorofenol dilakukan dalam reaktor tertutup yang dilengkapi dengan lampu UV. Pada uji ini telah dipelajari pengaruh waktu penyinaran dan pH larutan terhadap efektivitas fotodegradasi 4-klorofenol. Hasil penelitian menunjukkan bahwa komposit Fe2O3-SiO2 dapat dipreparasi dengan metode sol-gel pada temperatur kamar diikuti perlakuan termal. Komposit Fe2O3-SiO2 dapat meningkatkan efektivitas fotodegradasi 4-klorofenol dari 11,86 % menjadi 55,38 %. Efektivitas fotodegradasi 4- klorofenol dipengaruhi waktu penyinaran dan pH larutan yang semakin lama waktu penyinaran efektifitas fotodegradasi semakin tinggi, namun waktu penyinaran yang lebih lama dari 4 jam dapat menurunkan efektivitasnya. pH larutan memberikan pengaruh yang berbeda-beda pada efektivitas fotodegradasi 4-klorofenol.   ABSTRACT The activity test of Fe2O3-SiO2 composite as photocatalyst on 4-chlorophenol photodegradation has been studied. The research was initiated by preparation of Fe2O3-SiO2 photocatalyst and followed by characterization. The preparation was conducted by sol-gel method at room temperature using tetraethylorthosilicate (TEOS and iron (III nitrate as precursors followed by thermal treatment at a temperature of 500oC. The characterizations were performed by X-ray Diffraction (XRD, Infrared and X-ray Fluorescence Spectrophotometry. The photocatalytic activity test of composites for 4 chlorophenol

Analysis of SiO2 nanoparticles binding proteins in rat blood and brain homogenate

Directory of Open Access Journals (Sweden)

Shim KH

2014-12-01

Full Text Available Kyu Hwan Shim,1 John Hulme,1 Eun Ho Maeng,2 Meyoung-Kon Kim,3 Seong Soo A An1 1Department of Bionano Technology, Gachon Medical Research Institute, Gachon University, Sungnam-si, 2Department of Analysis, KTR, Kimpo, Gyeonggi-do, 3Department of Biochemistry and Molecular Biology, Korea University Medical School and College, Seoul, South Korea Abstract: A multitude of nanoparticles, such as titanium oxide (TiO2, zinc oxide, aluminum oxide, gold oxide, silver oxide, iron oxide, and silica oxide, are found in many chemical, cosmetic, pharmaceutical, and electronic products. Recently, SiO2 nanoparticles were shown to have an inert toxicity profile and no association with an irreversible toxicological change in animal models. Hence, exposure to SiO2 nanoparticles is on the increase. SiO2 nanoparticles are routinely used in numerous materials, from strengthening filler for concrete and other construction composites, to nontoxic platforms for biomedical application, such as drug delivery and theragnostics. On the other hand, recent in vitro experiments indicated that SiO2 nanoparticles were cytotoxic. Therefore, we investigated these nanoparticles to identify potentially toxic pathways by analyzing the adsorbed protein corona on the surface of SiO2 nanoparticles in the blood and brain of the rat. Four types of SiO2 nanoparticles were chosen for investigation, and the protein corona of each type was analyzed using liquid chromatography-tandem mass spectrometry technology. In total, 115 and 48 plasma proteins from the rat were identified as being bound to negatively charged 20 nm and 100 nm SiO2 nanoparticles, respectively, and 50 and 36 proteins were found for 20 nm and 100 nm arginine-coated SiO2 nanoparticles, respectively. Higher numbers of proteins were adsorbed onto the 20 nm sized SiO2 nanoparticles than onto the 100 nm sized nanoparticles regardless of charge. When proteins were compared between the two charges, higher numbers of proteins were

Preliminary study in development of glass-ceramic based on SiO{sub 2}-LiO{sub 2} system, starting of different SiO{sub 2} starting powders; Um estudo preliminar do desenvolvimento de materiais vitroceramicos do sistema SiO{sub 2}-LiO{sub 2} obtidos a partir de diferentes fontes de silica

Energy Technology Data Exchange (ETDEWEB)

Daguano, J.K.M.F.; Santos, F.A.; Santos, C.; Marton, L.F.M.; Conte, R.A.; Rodrigues Junior, D. [Universidade de Sao Paulo (EEL/USP), Lorena, SP (Brazil). Escola de Engenharia de Lorena. Dept. de Materiais; Melo, F.C.L. [Centro Tecnico Aeroespacial (AMR/CTA/IAE), Sao Jose dos Campos, SP (Brazil). Instituto de Aeronautica e Espaco. Div. de Materiais

2009-07-01

In this work, lithium disilicate glass-ceramics were developed starting of the rice ash- SiO{sub 2} and Li{sub 2}CO{sub 3} powders. The results were compared with glass ceramics based on the lithium disilicate obtained by commercial SiO{sub 2} powders. Glass were melted at 1580 deg C, and annealed at 850 deg C. X-Ray diffraction and scanning electron microscopy were used for characterization of the materials, and hardness and fracture toughness were evaluated using Vickers indentation method. Glasses with amorphous structure were obtained in both materials. After annealing, 'rice-ash' samples presented Li{sub 2}SiO{sub 3} and residual SiO{sub 2} as crystalline phases. On the other side, commercial SiO{sub 2}- Samples presented only Li{sub 2}Si{sub 2}O{sub 5} as crystalline phases and the better results of hardness and fracture toughness. (author)

Chemically activated graphene/porous Si@SiO{sub x} composite as anode for lithium ion batteries

Energy Technology Data Exchange (ETDEWEB)

Tao, Hua-Chao [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Yang, Xue-Lin, E-mail: xlyang@ctgu.edu.cn [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Zhang, Lu-Lu; Ni, Shi-Bing [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China)

2014-10-15

Chemically activated graphene/porous Si@SiO{sub x} (CAG/Si@SiO{sub x}) composite has been synthesized via magnesiothemic reduction of mesoporous SiO{sub 2} (MCM-48) to porous Si@SiO{sub x} and dispersing in the suspension of chemically activated graphene oxide (CAGO) followed by thermal reduction. The porous Si@SiO{sub x} particles are well encapsulated in chemically activated graphene (CAG) matrix. The resulting CAG/Si@SiO{sub x} composite exhibits a high reversible capacity and excellent cycling stability up to 763 mAh g{sup −1} at a current density of 100 mA g{sup −1} after 50 cycles. The porous structure of CAG layer and Si@SiO{sub x} is beneficial to accommodate volume expansion of Si during discharge and charge process and the interconnected CAG improves the electronic conductivity of composite. - Highlights: • Chemically activated graphene encapsulated porous Si composite was prepared. • The graphene offers a continuous electrically conductive network. • The porous structure can accommodate volume expansion of Si-based materials. • The composite exhibits excellent lithium storage performance.

Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer

Science.gov (United States)

Hussain, Babar

The conversion efficiency of conventional silicon (Si) photovoltaic cells has not been improved significantly during last two decades but their cost decreased dramatically during this time. However, the higher price-per-watt of solar cells is still the main bottleneck in their widespread use for power generation. Therefore, new materials need to be explored for the fabrication of solar cells potentially with lower cost and higher efficiency. The n-type zinc oxide (n-ZnO) and p-type Si (p-Si) based single heterojunction solar cell (SHJSC) is one of the several attempts to replace conventional Si single homojunction solar cell technology. There are three inadequacies in the literature related to n-ZnO/p-Si SHJSC: (1) a detailed theoretical analysis to evaluate potential of the solar cell structure, (2) inconsistencies in the reported value of open circuit voltage (VOC) of the solar cell, and (3) lower value of experimentally achieved VOC as compared to theoretical prediction based on band-bending between n-ZnO and p-Si. Furthermore, the scientific community lacks consensus on the optimum growth parameters of ZnO. In this dissertation, I present simulation and experimental results related to n-ZnO/p-Si SHJSC to fill the gaps mentioned above. Modeling and simulation of the solar cell structure are performed using PC1D and AFORS-HET software taking practical constraints into account to explore the potential of the structure. Also, unnoticed benefits of ZnO in solar cells such as an additional antireflection (AR) effect and low temperature deposition are highlighted. The growth parameters of ZnO using metal organic chemical vapor deposition and sputtering are optimized. The structural, optical, and electrical characterization of ZnO thin films grown on sapphire and Si substrates is performed. Several n-ZnO/p-Si SHJSC devices are fabricated to confirm the repeatability of the VOC. Moreover, the AR effect of ZnO while working as an n-type layer is experimentally verified

ZnO nanowire co-growth on SiO2 and C by carbothermal reduction and vapour advection

International Nuclear Information System (INIS)

Vega, N C; Caram, J; Grinblat, G; Comedi, D; Wallar, R; LaPierre, R R; Tirado, M

2012-01-01

Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO 2 films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO+C) source–SiO 2 substrate distance. We observe C flakes on the ZnO NWs/SiO 2 substrates which exhibit short NWs that developed on both sides. The SiO 2 and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO 2 were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate. (paper)

Pt/MOx/SiO2, Pt/MOx/TiO2, and Pt/MOx/Al2O3 Catalysts for CO Oxidation

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Hongmei Qin

2015-04-01

Full Text Available Conventional supported Pt catalysts have often been prepared by loading Pt onto commercial supports, such as SiO2, TiO2, Al2O3, and carbon. These catalysts usually have simple metal-support (i.e., Pt-SiO2 interfaces. To tune the catalytic performance of supported Pt catalysts, it is desirable to modify the metal-support interfaces by incorporating an oxide additive into the catalyst formula. Here we prepared three series of metal oxide-modified Pt catalysts (i.e., Pt/MOx/SiO2, Pt/MOx/TiO2, and Pt/MOx/Al2O3, where M = Al, Fe, Co, Cu, Zn, Ba, La for CO oxidation. Among them, Pt/CoOx/SiO2, Pt/CoOx/TiO2, and Pt/CoOx/Al2O3 showed the highest catalytic activities. Relevant samples were characterized by N2 adsorption-desorption, X-ray diffraction (XRD, transmission electron microscopy (TEM, H2 temperature-programmed reduction (H2-TPR, X-ray photoelectron spectroscopy (XPS, CO temperature-programmed desorption (CO-TPD, O2 temperature-programmed desorption (O2-TPD, and CO2 temperature-programmed desorption (CO2-TPD.

Beyond sixfold coordinated Si in SiO2 glass at ultrahigh pressures.

Science.gov (United States)

Prescher, Clemens; Prakapenka, Vitali B; Stefanski, Johannes; Jahn, Sandro; Skinner, Lawrie B; Wang, Yanbin

2017-09-19

We investigated the structure of SiO 2 glass up to 172 GPa using high-energy X-ray diffraction. The combination of a multichannel collimator with diamond anvil cells enabled the measurement of structural changes in silica glass with total X-ray diffraction to previously unachievable pressures. We show that SiO 2 first undergoes a change in Si-O coordination number from fourfold to sixfold between 15 and 50 GPa, in agreement with previous investigations. Above 50 GPa, the estimated coordination number continuously increases from 6 to 6.8 at 172 GPa. Si-O bond length shows first an increase due to the fourfold to sixfold coordination change and then a smaller linear decrease up to 172 GPa. We reconcile the changes in relation to the oxygen-packing fraction, showing that oxygen packing decreases at ultrahigh pressures to accommodate the higher than sixfold Si-O coordination. These results give experimental insight into the structural changes of silicate glasses as analogue materials for silicate melts at ultrahigh pressures.

Selective adsorption of thiophenic compounds from fuel over TiO{sub 2}/SiO{sub 2} under UV-irradiation

Energy Technology Data Exchange (ETDEWEB)

Miao, Guang [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640 (China); Ye, Feiyan [Key Laboratory of Enhanced Heat Transfer and Energy Conservation of the Ministry of Education South China University of Technology, Guangzhou 510640 (China); Wu, Luoming; Ren, Xiaoling [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640 (China); Xiao, Jing, E-mail: cejingxiao@scut.edu.cn [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640 (China); Li, Zhong, E-mail: cezhli@scut.edu.cn [Key Laboratory of Enhanced Heat Transfer and Energy Conservation of the Ministry of Education South China University of Technology, Guangzhou 510640 (China); Wang, Haihui [Key Laboratory of Enhanced Heat Transfer and Energy Conservation of the Ministry of Education South China University of Technology, Guangzhou 510640 (China)

2015-12-30

Highlights: • TiO{sub 2}/SiO{sub 2} was developed for selective adsorption of DBTs under UV irradiation. • Remarkable adsorption uptake and selectivity were achieved for deep desulfurization. • Introduction of TiO{sub 2} into SiO{sub 2} enhanced its adsorption for DBTO{sub 2}. • Adsorption mechanism using TiO{sub 2}/SiO{sub 2} under UV irradiation was elucidated. - Abstract: This study investigates selective adsorption of thiophenic compounds from fuel over TiO{sub 2}/SiO{sub 2} under UV-irradiation. The TiO{sub 2}/SiO{sub 2} adsorbents were prepared and then characterized by N{sub 2} adsorption, X-ray diffraction and X-ray photoelectron spectroscopy. Adsorption isotherms, selectivity and kinetics of TiO{sub 2}/SiO{sub 2} were measured in a UV built-in batch reactor. It was concluded that (a) with the employment of UV-irradiation, high organosulfur uptake of 5.12 mg/g was achieved on the optimized 0.3TiO{sub 2}/0.7SiO{sub 2} adsorbent at low sulfur concentration of 15 ppmw-S, and its adsorption selectivity over naphthalene was up to 325.5; (b) highly dispersed TiO{sub 2} served as the photocatalytic sites for DBT oxidation, while SiO{sub 2} acted as the selective adsorption sites for the corresponding oxidized DBT using TiO{sub 2} as a promoter, the two types of active sites worked cooperatively to achieve the high adsorption selectivity of TiO{sub 2}/SiO{sub 2}; (c) The kinetic rate-determining step for the UV photocatalysis-assisted adsorptive desulfurization (PADS) over TiO{sub 2}/SiO{sub 2} was DBT oxidation; (d) consecutive adsorption-regeneration cycles suggested that the 0.3TiO{sub 2}/0.7SiO{sub 2} adsorbent can be regenerated by acetonitrile washing followed with oxidative air treatment. This work demonstrated an effective PADS approach to greatly enhance adsorption capacity and selectivity of thiophenic compounds at low concentrations for deep desulfurization under ambient conditions.

High-Temperature Photovoltaic Effect in La.Ca.MnO/SiO/Si Heterojunction

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Hao Ni

2012-01-01

Full Text Available We fabricated a heterojunction of La0.4Ca0.6MnO3/SiO/n-Si and investigated its electronic transport and ultraviolet photovoltaic properties at higher temperature up to 673 K. The rectifying behaviors vanished with the energy-band structure evolvement from 300 to 673 K. Under irradiation of a 248 nm pulse laser, the peak values of open-circuit photovoltage and short-circuit photocurrent decreased drastically. This understanding of the temperature-related current-voltage behavior and ultraviolet photodetection of oxide heterostructures should open a route for devising future microelectronic devices working at high temperature. PACS: 73.40.Lq, 71.27.+ a, 73.50.Pz.

Hazards of TiO2 and amorphous SiO2 nanoparticles

NARCIS (Netherlands)

Reijnders, L.; Kahn, H.A.; Arif, I.A.

2012-01-01

TiO2 and amorphous SiO2 nanoparticles have been described as ‘safe’, ‘non-toxic’ and ‘environment friendly’ in scientific literature. However, though toxicity data are far from complete, there is evidence that these nanoparticles are hazardous. TiO2 nanoparticles have been found hazardous to humans

Target swapping in PLD: An efficient approach for CdS/SiO2 and CdS:Ag(1%)/SiO2 nanocomposite thin films with enhanced luminescent properties

International Nuclear Information System (INIS)

Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

2017-01-01

A novel synthesis method for luminescent and by-products (like CdO) free CdS/SiO 2 and CdS:Ag(1%)/SiO 2 (i.e. 1%Ag doped CdS/SiO 2 ) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS, CdS:Ag(1%) and SiO 2 are used to deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposite thin films by swapping them at a frequency ratio of 2:8 laser pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO 2 in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (i.e. 2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS/ CdS:Ag(1%) nanocrystals in nanocomposite systems after annealing at 500 °C. Highly intense and broad red emission is achieved from CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites. The efficiencies of emission from pristine CdS:SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites are found to be enhanced by approximately two times as compared to sole nanocrystalline CdS and CdS:Ag(1%) thin films respectively and further enhanced upto 7 times on annealing the nanocomposite systems at 500 °C. - Graphical abstract: A modified synthesis method for luminescent and by-products (like CdO) free undoped &1% Ag doped CdS/SiO 2 (deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 ) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS or CdS:Ag(1%) and SiO 2 are used to deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposite thin films by swapping them at a frequency of 2:8 pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO 2 in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS nanocrystals in nanocomposite systems after annealing at 500 °C. Intense and broad red emission is achieved from deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites. The efficiency of

Redetermination of clinobarylite, BaBe2Si2O7

Directory of Open Access Journals (Sweden)

Adrien J. Di Domizio

2012-10-01

Full Text Available Clinobarylite, ideally BaBe2Si2O7 (chemical name barium diberyllium disilicate, is a sorosilicate mineral and dimorphic with barylite. It belongs to a group of compounds characterized by the general formula BaM2+2Si2O7, with M2+ = Be, Mg, Fe, Mn, Zn, Co, or Cu, among which the Be-, Fe-, and Cu-members have been found in nature. The crystal structure of clinobarylite has been re-examined in this study based on single-crystal X-ray diffraction data collected from a natural sample from the type locality (Khibiny Massif, Kola Peninsula, Russia. The structure of clinobarylite can be considered as a framework of BeO4 and SiO4 tetrahedra, with one of the O atoms coordinated to two Be and one Si, one coordinated to two Si, and two O atoms coordinated to one Si and one Be atom. The BeO4 tetrahedra share corners, forming chains parallel to the c axis, which are interlinked by the Si2O7 units oriented parallel to the a axis. The Ba2+ cations (site symmetry m.. are in the framework channels and are coordinated by eleven O atoms in form of an irregular polyhedron. The Si—Obr (bridging O atom, at site symmetry m.. bond length, the Si—Onbr (non-bridging O atoms bond lengths, and the Si—O—Si angle within the Si2O7 unit are in marked contrast to the corresponding values determined in the previous study [Krivovichev et al. (2004. N. Jb. Miner. Mh. pp. 373–384].

Dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 system

OpenAIRE

Yixiang Chen; Zengchao Yang; Bin He; Guanghua Liu; Jiangtao Li; Liang Wu

2011-01-01

The dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 (YAS) system has been investigated by melting experiment. Transparent YAS glasses have been prepared under the condition of furnace cooling instead of quenching. It is found that, in the YAS ternary phase diagram, the compositions on the Y3Al5O12–SiO2 line and with 52-68 mol% SiO2 have a higher glass-forming ability to produce pure glass. For the compositions with too much or less SiO2 or with Y/Al = 5/3, 1/1,...

Excimer laser crystallization of InGaZnO4 on SiO2 substrate

NARCIS (Netherlands)

Chen, T.; Wu, M.Y.; Ishihara, R.; Nomura, K.; Kamiya, T.; Hosono, H.; Beenakker, C.I.M.

2011-01-01

In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating

High Photocatalytic Activity of Fe3O4-SiO2-TiO2 Functional Particles with Core-Shell Structure

Directory of Open Access Journals (Sweden)

Chenyang Xue

2013-01-01

Full Text Available This paper describes a novel method of synthesizing Fe3O4-SiO2-TiO2 functional nanoparticles with the core-shell structure. The Fe3O4 cores which were mainly superparamagnetic were synthesized through a novel carbon reduction method. The Fe3O4 cores were then modified with SiO2 and finally encapsulated with TiO2 by the sol-gel method. The results of characterizations showed that the encapsulated 700 nm Fe3O4-SiO2-TiO2 particles have a relatively uniform size distribution, an anatase TiO2 shell, and suitable magnetic properties for allowing collection in a magnetic field. These magnetic properties, large area, relative high saturation intensity, and low retentive magnetism make the particles have high dispersibility in suspension and yet enable them to be recovered well using magnetic fields. The functionality of these particles was tested by measuring the photocatalytic activity of the decolouring of methyl orange (MO and methylene blue (MB under ultraviolet light and sunlight. The results showed that the introduction of the Fe3O4-SiO2-TiO2 functional nanoparticles significantly increased the decoloration rate so that an MO solution at a concentration of 10 mg/L could be decoloured completely within 180 minutes. The particles were recovered after utilization, washing, and drying and the primary recovery ratio was 87.5%.

UV-VUV laser induced phenomena in SiO2 glass

International Nuclear Information System (INIS)

Kajihara, Koichi; Ikuta, Yoshiaki; Oto, Masanori; Hirano, Masahiro; Skuja, Linards; Hosono, Hideo

2004-01-01

Creation and annihilation of point defects were studied for SiO 2 glass exposed to ultraviolet (UV) and vacuum UV (VUV) lights to improve transparency and radiation toughness of SiO 2 glass to UV-VUV laser light. Topologically disordered structure of SiO 2 glass featured by the distribution of Si-O-Si angle is a critical factor degrading transmittance near the fundamental absorption edge. Doping with terminal functional groups enhances the structural relaxation and reduces the number of strained Si-O-Si bonds by breaking up the glass network without creating the color centers. Transmittance and laser toughness of SiO 2 glass for F 2 laser is greatly improved in fluorine-doped SiO 2 glass, often referred as 'modified silica glass'. Interstitial hydrogenous species are mobile and reactive at ambient temperature, and play an important role in photochemical reactions induced by exposure to UV-VUV laser light. They terminate the dangling-bond type color centers, while enhancing the formation of the oxygen vacancies. These findings are utilized to develop a deep-UV optical fiber transmitting ArF laser photons with low radiation damage

Non-LTE Analysis of Interstellar Line Spectra of SiO

Science.gov (United States)

Zhang, Ziwei; Stancil, Phillip C.

2016-01-01

SiO emission lines are important probes of chemical processes in diverse astrophysical environments. In circumstellar outflows of AGB stars, the production of silicate grains is preceded by SiO formation, making SiO a useful measure of Si depletion. SiO is also commonly observed in shocks associated with the outflows of young stellar objects, both low- and high-mass. To model SiO emission for non-LTE conditions requires collisional rate coefficients due to H2 impact which are currently unavailable. Unknown collisional rate coefficients are often estimated from known systems. For the case of SiO-H2, rate coefficients have previously been adapted from a different collider, He (Dayau & Balanca 2006), based on a reduced-mass scaling approach. Recently it has been suggested that scaling via the interaction potential well depth and the reduced masses of the collisional systems may be more reliable (Walker et al. 2014). Using the non-LTE spectral modeling package Radex (van der Tak et al. 2007), we construct diagnostic plots of SiO line ratios using SiO-H2 collisional rate coefficients based on (i) reduced-mass scaling from the LAMDA database, (ii) potential well-depth scaling, and (iii) a more comprehensive input with multiple colliders (H2, He and H). Our goal is to give a more rigorous approach to SiO line emission simulations to better understand Si chemistry, dust formation/destruction, and other astrophysical processes.This work was supported by NASA ATP grant NNX15AI61G.

Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

Science.gov (United States)

Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

2002-06-01

Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

Characterization of Ni-P-SiO_2-Al_2O_3 nanocomposite coatings on aluminum substrate

International Nuclear Information System (INIS)

Rahemi Ardakani, S.; Afshar, A.; Sadreddini, S.; Ghanbari, A.A.

2017-01-01

In the present work, nano-composites of Ni-P-SiO_2-Al_2O_3 were coated on a 6061 aluminum substrate. The surface morphology of the nano-composite coating was studied by field emission scanning electron microscopy (FESEM). The amount of SiO_2 in the coating was determined by Energy Dispersive Analysis of X-Ray (EDX) and the crystalline structure of the coating was examined by X-ray diffractometer (XRD). All the experiments concerning the corrosion behavior of the coating carried out in 3.5%wt NaCl solution and evaluated by electrochemical impedance spectroscopy (EIS) and polarization technique. The results showed that an incorporation of SiO_2 and Al_2O_3 in Ni-P coating at the SiO_2 concentration of 10 g/L and 14 g/L Al_2O_3 led to the lowest corrosion rate (i_c_o_r_r = 0.88 μA/cm"2), the most positive E_c_o_r_r and maximum microhardness (537 μHV). Furthermore, increasing the amount of nanoparticles in the coating was found to decrease CPE_d_l and improve porosity. - Highlights: • The maximum content of Al_2O_3 and SiO_2 in the coating was increased to 14.02%wt and 4.54%wt, respectively. • By enhancing the amount of nanoparticles in the coating, there was higher corrosion resistance. • Increasing the nanoparticles content in the coating improved microhardness of coating. • The maximum of microhardness of Ni-P-SiO_2-Al_2O_3 was measured to be 537 μHV.

Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO2

International Nuclear Information System (INIS)

Ershov, A. V.; Chugrov, I. A.; Tetelbaum, D. I.; Mashin, A. I.; Pavlov, D. A.; Nezhdanov, A. V.; Bobrov, A. I.; Grachev, D. A.

2013-01-01

The alternate vacuum evaporation of SiO and SiO 2 from separate sources is used to produce amorphous a-SiO x /SiO 2 multilayer nanoperiodic structures with periods of 5–10 nm and a number of layers of up to 64. The effect of annealing at temperatures T a = 500–1100°C on the structural and optical properties of the nanostructures is studied. The results of transmission electron microscopy of the samples annealed at 1100°C indicate the annealing-induced formation of vertically ordered quasiperiodic arrays of Si nanocrystals, whose dimensions are comparable to the a-SiO x -layer thickness in the initial nanostructures. The nanostructures annealed at 1100°C exhibit size-dependent photoluminescence in the wavelength range 750–830 nm corresponding to Si nanocrystals. The data on infrared absorption and Raman scattering show that the thermal evolution of structural and phase state of the SiO x layers with increasing annealing temperature proceeds through the formation of amorphous Si nanoinclusions with the subsequent formation and growth of Si nanocrystals.

Pd/CeO2/SiC Chemical Sensors

Science.gov (United States)

Lu, Weijie; Collins, W. Eugene

2005-01-01

The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky

Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

International Nuclear Information System (INIS)

Zheng Zhi-Wei; Huo Zong-Liang; Zhu Chen-Xin; Xu Zhong-Guang; Liu Jing; Liu Ming

2011-01-01

In this paper, we investigate an Al 2 O 3 /HfSiO stack as the blocking layer of a metal—oxide—nitride—oxide—silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al 2 O 3 /HfO 2 stack as the blocking layer, the sample with the Al 2 O 3 /HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al 2 O 3 /HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. (interdisciplinary physics and related areas of science and technology)

Effects of nano-SiO{sub 2} particles on surface tracking characteristics of silicone rubber composites

Energy Technology Data Exchange (ETDEWEB)

Liu, Yong, E-mail: tjuliuyong@tju.edu.cn; Li, Zhonglei; Du, Boxue [Key Laboratory of Smart Grid of Ministry of Education (Tianjin University), School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072 (China)

2014-09-08

Compared with neat silicone rubber composites (SiRCs), SiRCs filled with nano-sized SiO{sub 2} particles at weight ratios from 0.1 to 1.0 wt. % exhibit a higher surface flashover voltage and a greater resistance to surface tracking. Scanning electron microscopy images of tracking morphologies indicate that the SiO{sub 2} particles are situated in close proximity to the polymeric chains and act as bridges to stabilize the chains and maintain the structure of the composite. Higher concentrations of nano-sized SiO{sub 2} particles, however, (above 0.3 wt. %) produce defects in the molecular network which lead to reductions in both the surface flashover voltage and the resistance to surface tracking, although these reduced values are still superior to those of neat SiRCs. Therefore, SiRCs filled with nano-sized SiO{sub 2} particles, especially at an optimal weight ratio (0.1 to 0.3 wt. %), may have significant potential applications as outdoor insulators for power systems.

Potentiodynamical deposition of nanostructured MnO2 film at the assist of electrodeposited SiO2 as template

International Nuclear Information System (INIS)

Wu, Lian-Kui; Xia, Jie; Hou, Guang-Ya; Cao, Hua-Zhen; Tang, Yi-Ping; Zheng, Guo-Qu

2016-01-01

Highlights: • MnO 2 -SiO 2 composite film is prepared by potentiodynamical deposition. • Hierarchical porous MnO 2 films is obtained after the etching of SiO 2 . • The obtained MnO 2 film electrode exhibit high specific capacitance. - Abstract: We report a novel silica co-electrodeposition route to prepare nanostructured MnO 2 films. Firstly, MnO 2 -SiO 2 composite film was fabricated on a stainless steel substrate by potentiodynamical deposition, i.e. cyclic deposition, and then the SiO 2 template was removed by simple immersion in concentrated alkaline solution, leading to the formation of a porous MnO 2 (po-MnO 2 ) matrix. The structure and morphology of the obtained films were characterized using Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The electrochemical properties of the po-MnO 2 film were evaluated by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) and electrochemical impedance spectroscopy (EIS). Results showed that this porous MnO 2 derived from the MnO 2 -SiO 2 composite film exhibits good electrochemical performance for potential use as a supercapacitor material.

Heat stability evaluations of Co/SiO2 multilayers

International Nuclear Information System (INIS)

Ishino, Masahiko; Koike, Masato; Kanehira, Mika; Satou, Futami; Terauchi, Masami; Sano, Kazuo

2008-01-01

The heat stability of Co/SiO 2 multilayers was evaluated. Co/SiO 2 multilayer samples were deposited on Si substrate by means of an ion beam sputtering method, and annealed at temperatures from 100degC to 600degC in a vacuum furnace. For the structural and optical evaluations, small angle x-ray diffraction (XRD) measurements, soft x-ray reflectivity measurements, and transmission electron microscopy (TEM) observations were carried out. As the results, the Co/SiO 2 multilayer samples annealed up to 400degC maintained the initial multilayer structures, and kept almost the same soft x-ray reflectivities as that of the as-deposited Co/SiO 2 multilayer sample. A deterioration of the multilayer structure caused by the growth of Co grains was found on the Co/SiO 2 multilayer samples annealed over 500degC, and the soft x-ray reflectivity dropped in accordance with the deterioration of the multilayer structure. (author)

SiO EMISSION AS A TRACER OF X-RAY DOMINATED CHEMISTRY IN THE GALACTIC CENTER

International Nuclear Information System (INIS)

Amo-Baladron, M. A.; Martin-Pintado, J.; Morris, M. R.; Muno, M. P.; RodrIguez-Fernandez, N. J.

2009-01-01

We present emission maps of the Sgr A molecular cloud complex at the Galactic center (GC) in the J = 2 → 1 line of SiO observed with the IRAM 30 m telescope at Pico Veleta. Comparing our SiO(2-1) data cube with that of CS(1-0) emission with similar angular and velocity resolution, we find a correlation between the SiO/CS line intensity ratio and the equivalent width of the Fe Kα fluorescence line at 6.4 keV. We discuss the SiO abundance enhancement in terms of the two most plausible scenarios for the origin of the 6.4 keV Fe line: X-ray reflection nebula (XRN) and low-energy cosmic rays (LECRs). Both scenarios could explain the enhancement in the SiO/CS intensity ratio with the intensity of the 6.4 keV Fe line, but both present difficulties. The XRN scenario requires a population of very small grains to produce the SiO abundance enhancement, together with a past episode of bright X-ray emission from some source in the GC, possibly the central supermassive black hole, SgrA*, ∼300 yr ago. The LECR scenario needs higher gas column densities to produce the observed 6.4 keV Fe line intensities than those derived from our observations. It is possible to explain the SiO abundance enhancement if the LECRs originate in supernovae and their associated shocks produce the SiO abundance enhancement. However, the LECR scenario cannot account for the time variability of the 6.4 keV Fe line, which can be naturally explained by the XRN scenario.

Luminescence and energy transfer of Tb3+-doped BaO-Gd2O3-Al2O3-B2O3-SiO2 glasses.

Science.gov (United States)

Zuo, Chenggang; Huang, Jinze; Liu, Shaoyou; Xiao, Anguo; Shen, Youming; Zhang, Xiangyang; Zhou, Zhihua; Zhu, Ligang

2017-12-05

Transparent Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses with the greater than 4g/cm 3 were prepared by high temperature melting method and its luminescent properties have been investigated by measured UV-vis transmission, excitation, emission and luminescence decay spectra. The transmission spectrum shows there are three weak absorption bands locate at about 312, 378 and 484nm in the glasses and it has good transmittance in the visible spectrum region. Intense green emission can be observed under UV excitation. The effective energy transfer from Gd 3+ ion to Tb 3+ ion could occur and sensitize the luminescence of Tb 3+ ion. The green emission intensity of Tb 3+ ion could change with the increasing SiO 2 /B 2 O 3 ratio in the borosilicate glass matrix. With the increasing concentration of Tb 3+ ion, 5 D 4 → 7 F J transitions could be enhanced through the cross relaxation between the two nearby Tb 3+ ions. Luminescence decay time of 2.12ms from 546nm emission is obtained. The results indicate that Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses would be potential scintillating material for applications in X-ray imaging. Copyright © 2017 Elsevier B.V. All rights reserved.