WorldWideScience

Sample records for normal tunnel junctions

  1. Development of suspended normal-metal-type tunneling junction refrigerator

    Science.gov (United States)

    Kashiwaya, Satoshi; Kashiwaya, Hiromi; Koyanagi, Masao; Tanaka, Yukio

    2016-09-01

    We have developed a suspended normal-metal-type superconducting-normal metal-superconductor tunneling junction refrigerator for the cooling of highly sensitive sensors operating at ultralow temperatures. The performance of the refrigerator is evaluated by comparing the experimental conductance with the numerical results of a theoretical formulation. The lowest temperature of 0.093 K at a bath temperature of 0.334 K indicates the successful operation of the refrigerator. The maximum cooling power of the present refrigerator estimated on the basis of the nonequilibrium stationary state model is 213 pW for a junction area of 40 × 7 µm2.

  2. Tunneling Conductance in Normal Metal/Insulator/Triplet Superconductor Junction

    Institute of Scientific and Technical Information of China (English)

    LI Xiao-Wei

    2005-01-01

    Tunneling conductance in normal metal/insulator/triplet superconductor junctions is studied theoretically as a function of the bias voltage at zero temperature and finite temperature. The results show there are zero-bias conductance peak, zero-bias conductance dip and double-minimum structures in the spectra for p-wave superconductor junctions. The existence of such structures in the conductance spectrum can be taken as evidence that the pairing symmetry of Sr2RuO4 is p-wave symmetry.

  3. Coherent quantum transport in normal-metal/d-wave superconductor/normal-metal double tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    DONG; Zhengchao; FU; Hao

    2004-01-01

    Taking into account the effects of quantum interference and interface scattering, combining the electron current with hole current contribution to tunnel current,we study the coherent quantum transport in normal-metal/d-wave superconductor/normal-metal (NM/d-wave SC/NM) double tunnel junctions by using extended Blonder-Tinkham-Klapwijk (BTK) approach. It is shown that all quasiparticle transport coefficients and conductance spectrum exhibit oscillating behavior with the energy, in which periodic vanishing of Andreev reflection (AR) above superconducting gap is found.In tunnel limit for the interface scattering strength taken very large, there are a series of bound states of quasiparticles formed in SC.

  4. Zeeman effects on the coherent tunnelling conductance in normal-metal / superconductor / normal-metal double tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Dong Zheng-Chao

    2005-01-01

    The coherent quantum transport is investigated in normal-metal/superconductor/normal-metal (N/S/N) double tunnel junctions under a Zeeman magnetic field on the S. Taking simultaneously into account the electron-injected current from one N electrode and the hole-injected current from the other N electrode, we derive a general formula for the differential conductance in the N/S/N system. It is shown that the conductance spectrum exhibits oscillatory behaviour with the bias voltage, and the oscillation amplitude is reduced with increasing temperature and Zeeman magnetic field, the Zeeman energy can lead to the Zeeman splitting of conductance peaks. In the tunnel limit, a series of bound states of quasiparticles will form in the S.

  5. Similarities between normal- and super-currents in topological insulator magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Soodchomshom, Bumned, E-mail: Bumned@hotmail.co [ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd. Bangkok 10400 (Thailand); Chantngarm, Peerasak [Department of Electronics and Telecommunication Engineering, Faculty of Engineering, Pathumwan Institute of Technology, Bangkok 10330 (Thailand)

    2010-11-15

    This work compares the normal-current in a NM/Fi/NM junction with the super-current in a SC/Fi/SC junction, where both are topological insulator systems. NM and Fi are normal region and ferromagnetic region of thickness d with exchange energy m playing a role of the mass of the Dirac electrons and with the gate voltage V{sub G}, respectively. SC is superconducting region induced by a s-wave superconductor. We show that, interestingly, the critical super-current passing through a SC/Fi/SC junction behaves quite similar to the normal-current passing through a NM/Fi/NM junction. The normal-current and super-current exhibit N-peak oscillation, found when currents are plotted as a function of the magnetic barrier strength {chi} {approx} md/hv{sub F}. With the barrier strength Z {approx} V{sub G}d/hv{sub F}, the number of peaks N is determined through the relation Z {approx} N{pi} + {sigma}{pi} (with 0 < {sigma}{<=}1 for {chi} < Z). The normal- and the super-currents also exhibit oscillating with the same height for all of peaks, corresponding to the Dirac fermion tunneling behavior. These anomalous oscillating currents due to the interplay between gate voltage and magnetic field in the barrier were not found in graphene-based NM/Fi/NM and SC/Fi/SC junctions. This is due to the different magnetic effect between the Dirac fermions in topological insulator and graphene.

  6. Magnetic tunnel junctions (MTJs)

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.

  7. Tunneling Conductance in Ferromagnetic Metal/Normal Metal/Spin-Singlet -Wave Ferromagnetic Superconductor Junctions

    Directory of Open Access Journals (Sweden)

    Hamidreza Emamipour

    2013-01-01

    Full Text Available In the framework of scattering theory, we study the tunneling conductance in a system including two junctions, ferromagnetic metal/normal metal/ferromagnetic superconductor, where ferromagnetic superconductor is in spin-singlet -wave pairing state. The non-magnetic normal metal is placed in the intermediate layer with the thickness ( which varies from 1 nm to 10000 nm. The interesting result which we have found is the existence of oscillations in conductance curves. The period of oscillations is independent of FS and FN exchange field while it depends on . The obtained results can serve as a useful tool to determine the kind of pairing symmetry in ferromagnetic superconductors.

  8. Zeeman effects on d-wave superconductor and tunneling spectrum in normal-metal/d-wave superconductor tunnel junction

    Institute of Scientific and Technical Information of China (English)

    DONG Zhengchao

    2006-01-01

    We study the Zeeman effect on the d-wave superconductor and tunneling spectrum in normal-metal(N)/d-wave superconductor(S) junction by applying a Zeeman magnetic field to the S. It is shown that: (1) the Zeeman magnetic field can lead to the S gap decreasing, and with the increase in Zeeman energy, the superconducting state is changed to the normal state, exhibiting a first-order phase transition; (2) the Zeeman energy difference between the two splitting peaks in the conductance spectrum is equal to2h0 (h0 is the Zeeman energy); (3) both the barrier strength of interface scattering and the temperature can lower the magnitudes of splitting peaks, of which the barrier strength can lead to the splitting peaks becoming sharp and the temperature can smear out the peaks,however, neither of them can influence the Zeeman effect.

  9. Tunneling Conductance in a Normal Metal/Ferromagnetic Superconductor Nano-Junction at a Finite Temperature

    Institute of Scientific and Technical Information of China (English)

    Hamidreza Emamipour; M.R. Abolhassani

    2011-01-01

    In this study, we investigate the tunneling conductance at a finite temperature in a normal metal/ferromagnetic superconductor nano-junction where the ferromagnetic superconductor (FS) is in three different cooper pairing states: spin singlet s-wave pairing (SWP), spin triplet opposite spin pairing (OSP), and spin triplet equal spin pairing (ESP) while including Fermi wave mismatch (FWM) and effective mass mismatch (EMM) in two sides of the nano-junction. We find that the conductance shows clearly different behaviors all depending on the symmetries of cooper pairing in a manner that the conductance spectra shows a gap-like structure, two interior dips structure and zero bias peak for SWP, OSP, and ESP, respectively. Also, the effective FS gap (Δeff) is a linear and decreasing function of exchange field. The slope of (Δeff) versus exchange field for OSP is twice the SWP. Thus, we can determine the spin polarization of N/FS nano-junction based on the dependence of (Δeff) to exchange field.

  10. Andreev reflection in two-dimensional relativistic materials with realistic tunneling transparency in normal-metal/superconductor junctions

    Science.gov (United States)

    Chang, Yung-Yeh; Mou, Chung-Yu; Chung, Chung-Hou

    2017-08-01

    The Andreev conductance across realistic two-dimensional (2D) normal-metal (N)/superconductor (SC) junctions with a relativistic Dirac spectrum is theoretically investigated within the Blonder-Tinkham-Klapwijk formalism with tunable tunneling transparency. It is known that due to the effect of Klein tunneling, impurity potentials at the interface of 2D relativistic materials will enhance (not suppress) the tunneling and therefore are not suitable to model a realistic tunnel junction of these materials. Here, we propose a way to construct a more realistic tunnel junction by adding a narrow, homogeneous local strain, which effectively generates a δ -gauge potential and variations of electron hopping at the interface, to adjust the transparency of the N/SC junction. Remarkable suppression of the Andreev conductance is indeed observed in the graphene N/SC junction as the strength of the local strain increases. We also explore the Andreev conductance in a topological N/SC junction at the two inequivalent Dirac points and predict the distinctive behaviors for the conductance across the chiral-to-helical topological phase transition. The relevance of our results for the adatom-doped graphene is discussed.

  11. Confocal Annular Josephson Tunnel Junctions

    Science.gov (United States)

    Monaco, Roberto

    2016-09-01

    The physics of Josephson tunnel junctions drastically depends on their geometrical configurations and here we show that also tiny geometrical details play a determinant role. More specifically, we develop the theory of short and long annular Josephson tunnel junctions delimited by two confocal ellipses. The behavior of a circular annular Josephson tunnel junction is then seen to be simply a special case of the above result. For junctions having a normalized perimeter less than one, the threshold curves in the presence of an in-plane magnetic field of arbitrary orientations are derived and computed even in the case with trapped Josephson vortices. For longer junctions, a numerical analysis is carried out after the derivation of the appropriate motion equation for the Josephson phase. We found that the system is modeled by a modified and perturbed sine-Gordon equation with a space-dependent effective Josephson penetration length inversely proportional to the local junction width. Both the fluxon statics and dynamics are deeply affected by the non-uniform annulus width. Static zero-field multiple-fluxon solutions exist even in the presence of a large bias current. The tangential velocity of a traveling fluxon is not determined by the balance between the driving and drag forces due to the dissipative losses. Furthermore, the fluxon motion is characterized by a strong radial inward acceleration which causes electromagnetic radiation concentrated at the ellipse equatorial points.

  12. Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions

    Science.gov (United States)

    Julin, J. K.; Chaudhuri, S.; Laitinen, M.; Sajavaara, T.; Maasilta, I. J.

    2016-12-01

    In this paper we report a study of the effect of vacuum annealing at 400°C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1/f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing is a viable route to improve NIS junction devices after the sample has been fabricated.

  13. Tunneling conductance through normal metal - superconductor junctions: effects of Rashba spin orbit coupling and magnetic field

    Science.gov (United States)

    Kapri, Priyadarshini; Ganguly, Sudin; Basu, Saurabh

    2016-10-01

    In a system consisting of a metal-(s-wave) superconductor junction, we study the conductance characteristics in presence of Rashba spin orbit coupling (RSOC) and an external magnetic field applied along the plane of the sample. With a selective inclusion of the Rashba coupling either in the metallic or in both we note that there is a distinct effect with regard to the magnitude of the Andreev peak that occurs at a biasing voltage lower than the superconducting gap energy. The height of the peak is sensitive to the RSOC (increases with increase in RSOC) for RSOC to be present only in the metallic region, (same is true when RSOC is present throughout the junction), while the peak height is fairly independent when RSOC is solely present in the superconducting region. The in-plane magnetic field has very interesting effects which show up in the form of having a conductance peak at zero bias, thereby making it possible to realize a Majorana bound state.

  14. Current noise in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

    2017-06-15

    We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Josephson tunnel junction microwave attenuator

    DEFF Research Database (Denmark)

    Koshelets, V. P.; Shitov, S. V.; Shchukin, A. V.

    1993-01-01

    A new element for superconducting electronic circuitry-a variable attenuator-has been proposed, designed, and successfully tested. The principle of operation is based on the change in the microwave impedance of a superconductor-insulator-superconductor (SIS) Josephson tunnel junction when dc bias...

  16. Brownian refrigeration by hybrid tunnel junctions

    OpenAIRE

    Peltonen, J. T.; Helle, M.; Timofeev, A. V.; Solinas, P.; Hekking, F. W. J.; Pekola, Jukka P.

    2011-01-01

    Voltage fluctuations generated in a hot resistor can cause extraction of heat from a colder normal metal electrode of a hybrid tunnel junction between a normal metal and a superconductor. We extend the analysis presented in Phys. Rev. Lett. 98, 210604 (2007) of this heat rectifying system, bearing resemblance to a Maxwell’s demon. Explicit analytic calculations show that the entropy of the total system is always increasing. We then consider a single-electron transistor configuration with two ...

  17. ``Hybrid'' multi-gap/single-gap Josephson junctions: Evidence of macroscopic quantum tunneling in superconducting-to-normal switching experiments on MgB2/I/Pb and MgB2/I/Sn junctions

    Science.gov (United States)

    Carabello, Steve; Lambert, Joseph; Dai, Wenqing; Li, Qi; Chen, Ke; Cunnane, Daniel; Xi, X. X.; Ramos, Roberto

    We report results of superconducting-to-normal switching experiments on MgB2/I/Pb and MgB2/I/Sn junctions, with and without microwaves. These results suggest that the switching behavior is dominated by quantum tunneling through the washboard potential barrier, rather than thermal excitations or electronic noise. Evidence includes a leveling in the standard deviation of the switching current distribution below a crossover temperature, a Lorentzian shape of the escape rate enhancement peak upon excitation by microwaves, and a narrowing in the histogram of escape counts in the presence of resonant microwave excitation relative to that in the absence of microwaves. These are the first such results reported in ``hybrid'' Josephson tunnel junctions, consisting of multi-gap and single-gap superconducting electrodes.

  18. Electronic thermometry in tunable tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  19. Control over Rectification in Supramolecular Tunneling Junctions

    NARCIS (Netherlands)

    Wimbush, K.S.; Wimbush, Kim S.; Reus, William F.; van der Wiel, Wilfred Gerard; Reinhoudt, David; Whitesides, George M.; Nijhuis, C.A.; Velders, Aldrik

    2010-01-01

    In complete control: The magnitude of current rectification in well-defined supramolecular tunneling junctions can be controlled by changing the terminal functionality (red spheres) of dendrimers (gray spheres) immobilized on a supramolecular platform (see picture). Junctions containing biferrocene

  20. Predictive modelling of ferroelectric tunnel junctions

    Science.gov (United States)

    Velev, Julian P.; Burton, John D.; Zhuravlev, Mikhail Ye; Tsymbal, Evgeny Y.

    2016-05-01

    Ferroelectric tunnel junctions combine the phenomena of quantum-mechanical tunnelling and switchable spontaneous polarisation of a nanometre-thick ferroelectric film into novel device functionality. Switching the ferroelectric barrier polarisation direction produces a sizable change in resistance of the junction—a phenomenon known as the tunnelling electroresistance effect. From a fundamental perspective, ferroelectric tunnel junctions and their version with ferromagnetic electrodes, i.e., multiferroic tunnel junctions, are testbeds for studying the underlying mechanisms of tunnelling electroresistance as well as the interplay between electric and magnetic degrees of freedom and their effect on transport. From a practical perspective, ferroelectric tunnel junctions hold promise for disruptive device applications. In a very short time, they have traversed the path from basic model predictions to prototypes for novel non-volatile ferroelectric random access memories with non-destructive readout. This remarkable progress is to a large extent driven by a productive cycle of predictive modelling and innovative experimental effort. In this review article, we outline the development of the ferroelectric tunnel junction concept and the role of theoretical modelling in guiding experimental work. We discuss a wide range of physical phenomena that control the functional properties of ferroelectric tunnel junctions and summarise the state-of-the-art achievements in the field.

  1. Characterization of magnetic tunnel junction test pads

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Kjær, Daniel; Nielsen, Peter Folmer

    2015-01-01

    We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method...... on square tunnel junction pads with varying sizes and analyze the measured data using both the original and the modified CIPT model. Thus, we determine in which sample size range the modified CIPT model is needed to ensure validity of the extracted sample parameters, RA and TMR. In addition, measurements...... as a function of position on a square tunnel junction pad are used to investigate the sensitivity of the measurement results to probe misalignment....

  2. Spin-valley filter and tunnel magnetoresistance in asymmetrical silicene magnetic tunnel junctions

    Science.gov (United States)

    Wang, Dali; Huang, Zeyuan; Zhang, Yongyou; Jin, Guojun

    2016-05-01

    The spin and valley transports and tunnel magnetoresistance are studied in a silicene-based asymmetrical magnetic tunnel junction consisting of a ferromagnetic tunnel barrier, sandwiched between a ferromagnetic electrode and a normal electrode. For such an asymmetrical silicene junction, a general formulism is established. The numerical results show that the spin-valley resolved conductances strongly depend on the magnetization orientation of the ferromagnetic tunnel barrier, and the fully spin-valley polarized current can be realized by tuning a perpendicularly applied electric field. We also find that the tunnel magnetoresistance in this case can be effectively modified by the external electric field when the conductance is fully spin-valley polarized. In particular, the exchange field in the ferromagnetic electrode can further substantially enhance the tunnel magnetoresistance of the system. Our work provides a practical method for electric and magnetic manipulation of valley/spin polarization and tunnel magnetoresistance.

  3. Millikelvin cooling by heavy-fermion-based tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Prest, Martin; Min, Gao, E-mail: Min@cardiff.ac.uk [School of Engineering, Cardiff University, Cardiff CF24 3AA (United Kingdom); Whall, Terry [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2015-12-28

    This paper addresses a high-performance electron-tunneling cooler based on a novel heavy-fermion/insulator/superconductor junction for millikelvin cooling applications. We show that the cooling performance of an electronic tunneling refrigerator could be significantly improved using a heavy-fermion metal to replace the normal metal in a conventional normal metal/insulator/superconductor junction. The calculation, based on typical parameters, indicates that, for a bath temperature of 300 mK, the minimum cooling temperature of an electron tunneling refrigerator is reduced from around 170 mK to below 50 mK if a heavy-fermion metal is employed in place of the normal metal. The improved cooling is attributed to an enhancement in electron tunneling due to the existence of a resonant density of states at the Fermi level.

  4. Modelling of Dual-Junction Solar Cells including Tunnel Junction

    Directory of Open Access Journals (Sweden)

    Abdelaziz Amine

    2013-01-01

    Full Text Available Monolithically stacked multijunction solar cells based on III–V semiconductors materials are the state-of-art of approach for high efficiency photovoltaic energy conversion, in particular for space applications. The individual subcells of the multi-junction structure are interconnected via tunnel diodes which must be optically transparent and connect the component cells with a minimum electrical resistance. The quality of these diodes determines the output performance of the solar cell. The purpose of this work is to contribute to the investigation of the tunnel electrical resistance of such a multi-junction cell through the analysis of the current-voltage (J-V characteristics under illumination. Our approach is based on an equivalent circuit model of a diode for each subcell. We examine the effect of tunnel resistance on the performance of a multi-junction cell using minimization of the least squares technique.

  5. Inelastic tunneling in superconducting junctions

    Energy Technology Data Exchange (ETDEWEB)

    Hlobil, Patrik Christian

    2016-06-10

    In this dissertation a theoretical formalism of elastic and inelastic tunneling spectroscopy is developed for superconductors. The underlying physical processes behind the different two tunneling channels and their implications for the interpretation of experimental tunneling data are investigated in detail, which can explain the background conductance seen in the cuprate and iron-based superconductors. Further, the properties of the emitted light from a superconducting LED are investigated.

  6. Microscopic tunneling theory of long Josephson junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, N.; Hattel, Søren A.; Samuelsen, Mogens Rugholm

    1992-01-01

    We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate that the detai......We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate...

  7. Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

    Energy Technology Data Exchange (ETDEWEB)

    Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.; Anane, A.; Petroff, F.; Fert, A.; Dlubak, B.; Seneor, P. [Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, Palaiseau 91767 (France); Caneva, S.; Martin, M.-B.; Weatherup, R. S.; Kidambi, P. R.; Robertson, J.; Hofmann, S. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Xavier, S. [Thales Research and Technology, 1 avenue Augustin Fresnel, Palaiseau 91767 (France)

    2016-03-07

    We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

  8. Cooling of suspended nanostructures with tunnel junctions

    OpenAIRE

    Koppinen, P. J.; Maasilta, I. J.

    2009-01-01

    We have investigated electronic cooling of suspended nanowires with SINIS tunnel junction coolers. The suspended samples consist of a free standing nanowire suspended by four narrow ($\\sim$ 200 nm) bridges. We have compared two different cooler designs for cooling the suspended nanowire. We demonstrate that cooling of the nanowire is possible with a proper SINIS cooler design.

  9. Parallel Quantum Circuit in a Tunnel Junction

    Science.gov (United States)

    Faizy Namarvar, Omid; Dridi, Ghassen; Joachim, Christian

    2016-07-01

    Spectral analysis of 1 and 2-states per line quantum bus are normally sufficient to determine the effective Vab(N) electronic coupling between the emitter and receiver states through the bus as a function of the number N of parallel lines. When Vab(N) is difficult to determine, an Heisenberg-Rabi time dependent quantum exchange process must be triggered through the bus to capture the secular oscillation frequency Ωab(N) between those states. Two different linear and regimes are demonstrated for Ωab(N) as a function of N. When the initial preparation is replaced by coupling of the quantum bus to semi-infinite electrodes, the resulting quantum transduction process is not faithfully following the Ωab(N) variations. Because of the electronic transparency normalisation to unity and of the low pass filter character of this transduction, large Ωab(N) cannot be captured by the tunnel junction. The broadly used concept of electrical contact between a metallic nanopad and a molecular device must be better described as a quantum transduction process. At small coupling and when N is small enough not to compensate for this small coupling, an N2 power law is preserved for Ωab(N) and for Vab(N).

  10. Parallel Quantum Circuit in a Tunnel Junction.

    Science.gov (United States)

    Faizy Namarvar, Omid; Dridi, Ghassen; Joachim, Christian

    2016-07-25

    Spectral analysis of 1 and 2-states per line quantum bus are normally sufficient to determine the effective Vab(N) electronic coupling between the emitter and receiver states through the bus as a function of the number N of parallel lines. When Vab(N) is difficult to determine, an Heisenberg-Rabi time dependent quantum exchange process must be triggered through the bus to capture the secular oscillation frequency Ωab(N) between those states. Two different linear and regimes are demonstrated for Ωab(N) as a function of N. When the initial preparation is replaced by coupling of the quantum bus to semi-infinite electrodes, the resulting quantum transduction process is not faithfully following the Ωab(N) variations. Because of the electronic transparency normalisation to unity and of the low pass filter character of this transduction, large Ωab(N) cannot be captured by the tunnel junction. The broadly used concept of electrical contact between a metallic nanopad and a molecular device must be better described as a quantum transduction process. At small coupling and when N is small enough not to compensate for this small coupling, an N(2) power law is preserved for Ωab(N) and for Vab(N).

  11. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    Science.gov (United States)

    Chang, Y. Austin; Yang, Jianhua Joshua

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  12. Josephson tunnel junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M.P.

    2006-07-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  13. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir

    2015-04-29

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  14. Interfacial capacitance effects in magnetic tunneling junctions

    CERN Document Server

    Landry, G; Du, J; Xiao, J Q

    2001-01-01

    We have investigated the AC transport properties of magnetic tunnel junctions (MTJ) in order to characterize interfacial properties. One such property is interfacial charge accumulation, which leads to a voltage drop in the electrodes of the MTJ and the measured capacitance differing from the geometrical capacitance. Through measurement of capacitance spectra, we have extracted an interfacial capacitance of 16 mu F/cm sup 2 per interface and a screening length of 0.55 A for FeNi electrodes.

  15. Superconducting Tunnel Junction Arrays for UV Photon Detection Project

    Data.gov (United States)

    National Aeronautics and Space Administration — An innovative method is described for the fabrication of superconducting tunnel junction (STJ) detector arrays offering true "three dimensional" imaging throughout...

  16. Fully magnetic manganite spin filter tunnel junctions

    Science.gov (United States)

    Prasad, Bhagwati; Blamire, Mark G.

    2016-09-01

    In this paper we demonstrate spintronic devices which combine magnetic tunnel junctions with a spin-filtering tunnel barrier. These consist of an ultrathin ferromagnetic insulating barrier, Sm0.75Sr0.25MnO3, sandwiched between two ferromagnetic half-metallic manganite electrodes, La0.7Sr0.3MnO3 and La0.7Ca0.3MnO3, in a nanopillar structure. Depending on the relative magnetic configurations of barrier and electrode layers, three resistance states are well defined, which therefore represent a potential three-state memory concept. These results open the way for the development of spintronic devices by exploiting the many degrees of freedom of perovskite manganite heterostructure systems.

  17. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur

    2011-08-09

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

  18. Fixed-gap tunnel junction for reading DNA nucleotides.

    Science.gov (United States)

    Pang, Pei; Ashcroft, Brian Alan; Song, Weisi; Zhang, Peiming; Biswas, Sovan; Qing, Quan; Yang, Jialing; Nemanich, Robert J; Bai, Jingwei; Smith, Joshua T; Reuter, Kathleen; Balagurusamy, Venkat S K; Astier, Yann; Stolovitzky, Gustavo; Lindsay, Stuart

    2014-12-23

    Previous measurements of the electronic conductance of DNA nucleotides or amino acids have used tunnel junctions in which the gap is mechanically adjusted, such as scanning tunneling microscopes or mechanically controllable break junctions. Fixed-junction devices have, at best, detected the passage of whole DNA molecules without yielding chemical information. Here, we report on a layered tunnel junction in which the tunnel gap is defined by a dielectric layer, deposited by atomic layer deposition. Reactive ion etching is used to drill a hole through the layers so that the tunnel junction can be exposed to molecules in solution. When the metal electrodes are functionalized with recognition molecules that capture DNA nucleotides via hydrogen bonds, the identities of the individual nucleotides are revealed by characteristic features of the fluctuating tunnel current associated with single-molecule binding events.

  19. Annealing free magnetic tunnel junction sensors

    Science.gov (United States)

    Knudde, S.; Leitao, D. C.; Cardoso, S.; Freitas, P. P.

    2017-04-01

    Annealing is a major step in the fabrication of magnetic tunnel junctions (MTJs). It sets the exchange bias between the pinned and antiferromagnetic layers, and helps to increase the tunnel magnetoresistance (TMR) in both amorphous and crystalline junctions. Recent research on MTJs has focused on MgO-based structures due to their high TMR. However, the strict process control and mandatory annealing step can limit the scope of the application of these structures as sensors. In this paper, we present AlOx-based MTJs that are produced by ion beam sputtering and remote plasma oxidation and show optimum transport properties with no annealing. The microfabricated devices show TMR values of up to 35% and using NiFe/CoFeB free layers provides tunable linear ranges, leading to coercivity-free linear responses with sensitivities of up to 5.5%/mT. The top-pinned synthetic antiferromagnetic reference shows a stability of about 30 mT in the microfabricated devices. Sensors with linear ranges of up to 60 mT are demonstrated. This paves the way for the integration of MTJ sensors in heat-sensitive applications such as flexible substrates, or for the design of low-footprint on-chip multiaxial sensing devices.

  20. MgB2 tunnel junctions and SQUIDs

    NARCIS (Netherlands)

    Brinkman, A.; Rowell, J.M.

    2007-01-01

    Recent advances in the realization and understanding of MgB2 tunnel junctions and SQUIDs are surveyed. High quality MgB2 junctions with suitable tunnel barriers have been realized based on both oriented and epitaxial thin MgB2 films. Multiband transport properties, such as the existence of two energ

  1. Parametric excitation of plasma oscillations in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Bak, Christen Kjeldahl; Kofoed, Bent; Pedersen, Niels Falsig

    1975-01-01

    Experimental evidence for subharmonic parametric excitation of plasma oscillations in Josephson tunnel junctions is presented. The experiments described are performed by measuring the microwave power necessary to switch a Josephson−tunnel junction biased in the zero−voltage state to a finite−volt......−voltage state. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  2. Gamma Radiation Tolerance of Magnetic Tunnel Junctions

    Science.gov (United States)

    Ren, Fanghui; Jander, Albrecht; Dhagat, Pallavi; Nordman, Cathy

    2011-10-01

    Determining the radiation tolerance of magnetic tunnel junctions (MTJ), which are the storage elements of non-volatile magnetoresistive random access memories (MRAM), is important for investigating their potential application in space. In this effort, the effect of gamma radiation on MTJs with MgO tunnel barriers was studied. Experimental and control groups of samples were characterized by ex situ measurements of the magnetoresistive hysteresis loops and I-V curves. The experimental group was exposed to gamma rays from a ^60Co source. The samples initially received a dose of 5.9 Mrad (Si) after which they were again characterized electrically and magnetically. Irradiation was then continued for a cumulative dose of 10 Mrad and the devices re-measured. The result shows no change in magnetic properties such as coercivity or exchange coupling due to irradiation. After correcting for differences in temperature at the time of testing, the tunneling magnetoresistance was also found to be unchanged. Thus, it has been determined that MgO-based MTJs are highly tolerant of gamma radiation, particularly in comparison to silicon field-effect transistors which have been shown to degrade with gamma ray exposure even as low as 100 Krad [Zhiyuan Hu. et al., IEEE trans. on Nucl. Sci., vol. 58, 2011].

  3. Magnetic interaction between spatially extended superconducting tunnel junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, Niels; Samuelsen, Mogens Rugholm

    2002-01-01

    A general description of magnetic interactions between superconducting tunnel junctions is given. The description covers a wide range of possible experimental systems, and we explicitly explore two experimentally relevant limits of coupled junctions. One is the limit of junctions with tunneling...... been considered through arrays of superconducting weak links based on semiconductor quantum wells with superconducting electrodes. We use the model to make direct interpretations of the published experiments and thereby propose that long-range magnetic interactions are responsible for the reported...

  4. Planar Josephson tunnel junctions in a transverse magnetic field

    DEFF Research Database (Denmark)

    Monacoa, R.; Aarøe, Morten; Mygind, Jesper

    2007-01-01

    Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...... demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse...

  5. Zero-voltage nondegenerate parametric mode in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig

    1976-01-01

    A new parametric mode in a Josephson tunnel junction biased in the zero-voltage mode is suggested. It is a nondegenerate parametric excitation where the junction plasma resonance represents the input circuit, and a junction geometrical resonance represents the idler circuit. This nondegenerate mo...... for such a coupling. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  6. Highly doped layer for tunnel junctions in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fetzer, Christopher M.

    2017-08-01

    A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

  7. Superpoissonian shot noise in organic magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G., E-mail: farkhad.aliev@uam.es [Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC), Universidad Autonoma de Madrid, Madrid 28049 (Spain); Hong, Jhen-Yong; Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan and Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Szczepański, Tomasz; Dugaev, Vitalii K. [Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów (Poland); Barnaś, Józef [Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland and Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland)

    2014-12-08

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

  8. Ferroelectric control of anisotropic damping in multiferroic tunnel junctions

    Science.gov (United States)

    Wang, Yan; Zhang, Ning; Berakdar, Jamal; Jia, Chenglong

    2015-10-01

    The magnetoelectric effect on nonlocal magnetization dynamics is theoretically investigated in normal-metal/ferroelectric-insulator/ferromagnetic tunnel junctions. In addition to the Rashba spin-orbit interaction (SOI) originating from loss of parity symmetry at the interfaces, the topology of interfacial spiral spins triggered by ferroelectric polarization acts with an effective SOI that is electrically controllable. These spin-dependent interactions result in an anisotropic Gilbert damping with C2 v symmetry. The findings are of a direct relevance for the utilization of composite multiferroics for devices that rely on electrically controlled magnetic switching.

  9. Operating modes of superconducting tunnel junction device

    Energy Technology Data Exchange (ETDEWEB)

    Maehata, Keisuke [Kyushu Univ., Fukuoka (Japan). Faculty of Engineering

    1998-07-01

    In the Electrotechnical Laboratory, an Nb type superconducting tunnel junction (STJ) device with 200 x 200 sq. micron in area and super high quality was manufactured. By using 55-fe source, response of this large area STJ to X-ray was measured. In this measurement, two action modes with different output wave height from front amplifier were observed. Then, in this study, current-voltage feature of the element in each action mode was analyzed to elucidate a mechanism to form such two action modes. The feature was analyzed by using first order approximate solution on cavity resonance mode of Sine-Gordon equation. From the analytical results, it could be supposed that direction and magnitude of effective magnetic field penetrating into jointed area changed by an induction current effect owing to impressing speed of the magnetic field, which brings two different current-voltage features to make possible to observe two action modes with different pulse wave height. (G.K.)

  10. Tantalum oxide barrier in magnetic tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Guanghua Yu; Tingting Ren; Wei Ji; Jiao Teng; Fengwu Zhu

    2004-01-01

    Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy (XPS) was used to characterize the oxidation states of Ta barrier.The experimental results show that the chemical state of tantalum is pure Ta5+ and the thickness of the oxide is 1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usually used in MTJs to form an intermetallic compound,NiTa2. A magnetic "dead layer" could be produced in the NiFe/Ta interface. The "dead layer" is likely to influence the spinning electron transport and the magnetoresistance effect.

  11. Development of superconducting tunnel junction radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Katagiri, Masaki; Kishimoto, Maki; Ukibe, Masahiro; Nakamura, Tatsuya; Nakazawa, Masaharu [Japan Atomic Energy Research Inst., Tokyo (Japan); Kurakado, Masahiko; Ishibashi, Kenji; Maehata, Keisuke

    1998-07-01

    Study on development of high energy resolution X-ray detector using superconducting tunnel junction (STJ) for radiation detection was conducted for 5 years under cooperation of University of Tokyo group and Kyushu University group by Quantum measurement research group of Advanced fundamental research center of JAERI. As the energy resolution of STJ could be obtained better results than that of Si semiconductor detector told to be actually best at present, this study aimed to actualize an X-ray detector usable for the experimental field and to elucidate radiation detection mechanism due to STJ. The STJ element used for this study was the one developed by Kurakado group of Nippon Steel Corp. As a results, some technical problems were almost resolved, which made some trouble when using the STJ element to detection element of X-ray spectrometer. In order to make the X-ray detector better, it is essential to manufacture a STJ element and develop serial junction type STJ element on the base of optimization of the element structure and selection and single crystallization of new superconducting materials such as Ta and others, activating the research results. (G.K.)

  12. Seebeck effect in magnetic tunnel junctions.

    Science.gov (United States)

    Walter, Marvin; Walowski, Jakob; Zbarsky, Vladyslav; Münzenberg, Markus; Schäfers, Markus; Ebke, Daniel; Reiss, Günter; Thomas, Andy; Peretzki, Patrick; Seibt, Michael; Moodera, Jagadeesh S; Czerner, Michael; Bachmann, Michael; Heiliger, Christian

    2011-10-01

    Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, that is, the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge-based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In this respect, it is the analogue to the tunnelling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configurations are of the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. The geometric centre of the electronic density of states relative to the Fermi level determines the size of the Seebeck effect. Experimentally, we realized 8.8% magneto-Seebeck effect, which results from a voltage change of about -8.7 μV K⁻¹ from the antiparallel to the parallel direction close to the predicted value of -12.1 μV K⁻¹. In contrast to the spin-Seebeck effect, it can be measured as a voltage change directly without conversion of a spin current.

  13. Tunneling electroresistance of MgZnO-based tunnel junctions

    Science.gov (United States)

    Belmoubarik, Mohamed; Al-Mahdawi, Muftah; Obata, Masao; Yoshikawa, Daiki; Sato, Hideyuki; Nozaki, Tomohiro; Oda, Tatsuki; Sahashi, Masashi

    2016-10-01

    We investigated the tunneling electroresistance (TER) in metal/wurtzite-MgZnO/metal junctions for applications in nonvolatile random-access memories. A resistive switching was detected utilizing an electric-field cooling at ±1 V and exhibited a TER ratio of 360%-490% at 2 K. The extracted change in the average barrier height between the two resistance states gave an estimation of the MgZnO electric polarization at 2.5 μC/cm2 for the low-temperature limit. In addition, the temperature-dependent TER ratio and the shift of the localized states energies at the barrier interface supported the ferroelectric behavior of the MgZnO tunnel-barrier. From the first-principles calculations, we found a similar effect of the barrier height change coming from the reversal of ZnO electric polarization. The possibility of using metal electrodes and lower growth temperatures, in addition to the ferroelectric property, make the ZnO-based memory devices suitable for CMOS integration.

  14. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

    Science.gov (United States)

    Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2016-08-01

    The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al2O3/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

  15. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Bedoya-Pinto, Amilcar [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Max Planck Institute of Microstructure Physics, D-06120 Halle (Germany); Sun, Xiangnan [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); National Center for Nanoscience and Technology, 100190 Beijing (China); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

    2016-08-01

    The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

  16. Tunneling transport in d-wave superconductor-silicene junction

    Science.gov (United States)

    Hajati, Y.; Vosoughi nia, S.; Rashedi, G.

    2017-02-01

    We theoretically study the tunneling conductance of a normal/d-wave superconductor silicene junction using Blonder-Tinkham-Klapwijk (BTK) formalism. We discuss in detail how the conductances spectra are affected by inducing d-wave superconducting pairing symmetry in the buckled silicene. It is obtained that the amplitude of the spin/valley-dependent Andreev reflection and subgap conductance of the junction can be strongly modulated by the orientation angle of superconductive gap (β) and perpendicular electric field (EZ), suggesting that one may experimentally tune the transport properties of the junction through changing β and EZ. We demonstrate that the subgap conductance exhibits an oscillatory behavior as a function of the orientation angle of superconductive gap (β) with a period of π / 2 and by increasing the insulating gap of silicene, the charge conductance oscillations suppress. Remarkably, due to the buckled structure of silicene at the maximum orientation angle of the d-wave superconducting β = π / 4 , we found a very distinct behavior from the graphene-based NS junction where the charge conductance is insensitive to the bias energy. In addition, the Andreev reflection and subgap conductance can be switched on and off by applying electric field.

  17. Terahertz Detection with Twin Superconductor-Insulator-Superconductor Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    LI Jing; WANG Ming-Jye; SHI Sheng-Cai; Hiroshi Mat-suo

    2007-01-01

    Terahertz detection with twin superconductor-insulator-superconductor (SIS) tunnel junctions, which are connected in parallel via an inductive thin-film superconducting microstrip line, is mainly studied. Firstly, we investigate the direct-detection response of a superconducting twin-junction device by means of a Fourier transform spectrometer. Secondly, we construct a direct-detection model of twin SIS tunnel junctions. The superconducting twin-junction device is then simulated in terms of the constructed model. The simulation result is found to be in good agreement with the measured one. In addition, we observe that the direct-detection response of the device is consistent with the noise temperature behaviour.

  18. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2017-04-18

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

  19. Tunnel anisotropic magnetoresistance in CoFeB|MgO|Ta junctions

    Energy Technology Data Exchange (ETDEWEB)

    Hatanaka, S.; Miwa, S., E-mail: miwa@mp.es.osaka-u.ac.jp; Matsuda, K.; Nawaoka, K.; Tanaka, K.; Morishita, H.; Goto, M.; Mizuochi, N.; Shinjo, T.; Suzuki, Y. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

    2015-08-24

    We found that CoFeB|MgO|Ta tunnel junctions exhibit tunnel anisotropic magnetoresistance (TAMR) at room temperature. The tunnel junctions exhibit positive magnetoresistance with the application of a magnetic field normal to the film plane. The dependencies on the applied magnetic field angle and MgO thickness reveal that the magnetoresistance originates from the TAMR, caused by the spin polarization and the spin-orbit interaction at the CoFeB|MgO interface. We also found that the TAMR can be used to detect ferromagnetic resonance in the CoFeB. This detection method could be useful for the characterization of nanomagnets that are free from the spin-transfer effect and the stray field of a reference layer, unlike conventional magnetic tunnel junctions.

  20. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    Directory of Open Access Journals (Sweden)

    Takeo Ohno and Yutaka Oyama

    2012-01-01

    Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

  1. Determination of Relaxation Time of a Josephson Tunnel Junction

    Institute of Scientific and Technical Information of China (English)

    WEN Xue-Da; YU Yang

    2008-01-01

    We propose a non-stationary method to measure the energy relaxation time of Josephson tunnel junctions from microwave enhanced escape phenomena.Compared with the previous methods,our method possesses simple and accurate features.Moreover,having determined the energy relaxation time,we can further obtain the coupling strength between the microwave source and the junction by changing the microwave power.

  2. Study of the geometrical resonances of superconducting tunnel junctions

    DEFF Research Database (Denmark)

    Sørensen, O. Hoffmann; Finnegan, T.F.; Pedersen, Niels Falsig

    1973-01-01

    The resonant cavity structure of superconducting Sn-Sn-oxide-Sn tunnel junctions has been investigated via photon-assisted quasiparticle tunneling. We find that the temperature-dependent losses at 35 GHz are determined by the surface resistance of the Sn films for reduced temperatures between 0...

  3. Shot Noise in Ferromagnetic Superconductor Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    In this paper, the superconducting order parameter and the energy spectrum of the Bogoliubov excitations are obtained from the Bogoliubov-de Gennes (BdG) equation for a ferromagnetic superconductor (FS). Taking into account the rough interface scattering effect, we calculate the shot noise and the differential conductance of the normal- metal insulator ferromagnetic superconductor junction. It is shown that the exchange energy Eh in FS can lead to splitting of the differential shot noise peaks and the conductance peaks. The energy difference between the two splitting peaks is equal to 2Eh. The rough interface scattering strength results in descent of conductance peaks and the shot noise-to-current ratio but increases the shot noise.

  4. Tunnel Field-Effect Transistor with Epitaxially Grown Tunnel Junction Fabricated by Source/Drain-First and Tunnel-Junction-Last Processes

    Science.gov (United States)

    Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Masahara, Meishoku; Ota, Hiroyuki

    2013-04-01

    We fabricate p- and n-channel Si tunnel field-effect transistors (TFETs) with an epitaxially grown tunnel junction. In a novel source/drain-first and tunnel-junction-last fabrication process, a thin epitaxial undoped Si channel (epichannel) is deposited on a preferentially fabricated p- or n-type source area. The epichannel sandwiched by a gate insulator and a highly doped source well acts as a parallel-plate tunnel capacitor, which effectively multiplies drain current with an enlarged tunnel area. On the basis of its simple structure and easy fabrication, symmetric n- and p-transistor and complementary metal oxide semiconductor inverter operations were successfully demonstrated.

  5. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Zhang Zheng-Zhong; Shen Rui; Sheng Li; Wang Rui-Qiang; Wang Bai-Gen; Xing Ding-Yu

    2011-01-01

    A single-molecule magnet (SMM)coupled to two normal metallic electrodes can both switch spin-up and spindown electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  6. Nonequilibrium and relaxation effects in tunnel superconducting junctions

    Science.gov (United States)

    Bezuglyi, E. V.; Vasenko, A. S.; Bratus', E. N.

    2017-02-01

    The specific property of a planar tunnel junction with thin-film diffusive plates and long enough leads is an essential enhancement of its transmission coefficient compared to the bare transparency of the tunnel barrier [1, 2]. In voltage-biased junctions, this creates favorable conditions for strong nonequilibrium of quasiparticles in the junction plates and leads, produced by multiparticle tunneling. We study theoretically the interplay between the nonequilibrium and relaxation processes in such junctions and found that nonequilibrium in the leads noticeably modifies the current-voltage characteristic at {eV}> 2{{Δ }}, especially the excess current, whereas strong diffusive relaxation restores the result of the classical tunnel model. At {eV}≤slant 2{{Δ }}, the diffusive relaxation decreases the peaks of the multiparticle currents. The inelastic relaxation in the junction plates essentially suppresses the n-particle currents (n> 2) by the factor n for odd and n/2 for even n. The results may be important for the problem of decoherence in Josephson-junction based superconducting qubits.

  7. Tunneling Conductance in Quantum-Wire/Ferromagnetic-Insulator/d-Wave Superconductor Junction

    Institute of Scientific and Technical Information of China (English)

    LI Xiao-Wei

    2008-01-01

    We have studied the quasiparticle transport in quantum-wire /ferromagnetic-insulator/d wave super-conductor Junction (q/FI/d) in the framework of the Blonder Tinkham-Klapwijk model We calculate the tunneling conductance in q/FI/d as a function of the bias voltage at zero temperature and finite temperature based on Bogoliubov-de Gennes equations. Different from the case in normal-metal/insulator/d wave superconductor Junctions, the zero-bias conductance peaks vanish for the single-mode case. The tunneling conductance spectra depend on the magnitude of the exchange interaction at the ferromagnetic-insulator.

  8. Atomically Thin Al2O3 Films for Tunnel Junctions

    Science.gov (United States)

    Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

    2017-06-01

    Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

  9. GaInN-based tunnel junctions with graded layers

    Science.gov (United States)

    Takasuka, Daiki; Akatsuka, Yasuto; Ino, Masataka; Koide, Norikatsu; Takeuchi, Tetsuya; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

    2016-08-01

    We demonstrated low-resistivity GaInN-based tunnel junctions using graded GaInN layers. A systematic investigation of the samples grown by metalorganic vapor phase epitaxy revealed that a tunnel junction consisting of a 4 nm both-sides graded GaInN layer (Mg: 1 × 1020 cm-3) and a 2 nm GaN layer (Si: 7 × 1020 cm-3) showed the lowest specific series resistance of 2.3 × 10-4 Ω cm2 at 3 kA/cm2 in our experiment. The InN mole fraction in the 4 nm both-sides graded GaInN layer was changed from 0 through 0.4 to 0. The obtained resistance is comparable to those of standard p-contacts with Ni/Au and MBE-grown tunnel junctions.

  10. Magnetostatic effects on switching in small magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bapna, Mukund; Piotrowski, Stephan K.; Oberdick, Samuel D.; Majetich, Sara A., E-mail: sara@cmu.edu [Physics Department, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Li, Mingen; Chien, C.-L. [Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218 (United States)

    2016-01-11

    Perpendicular CoFeB/MgO/CoFeB magnetic tunnel junctions with diameters under 100 nm are investigated by conductive atomic force microscopy. Minor loops of the tunnel magnetoresistance as a function of applied magnetic field reveal the hysteresis of the soft layer and an offset due to the magnetostatic field of the hard layer. Within the hysteretic region, telegraph noise is observed in the tunnel current. Simulations show that in this range, the net magnetic field in the soft layer is spatially inhomogeneous, and that antiparallel to parallel switching tends to start near the edge, while parallel to antiparallel reversal favors nucleation in the interior of the soft layer. As the diameter of the tunnel junction is decreased, the average magnitude of the magnetostatic field increases, but the spatial inhomogeneity across the soft layer is reduced.

  11. Magnetoresistance of galfenol-based magnetic tunnel junction

    Science.gov (United States)

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

    2015-12-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  12. Flexible MgO Barrier Magnetic Tunnel Junctions.

    Science.gov (United States)

    Loong, Li Ming; Lee, Wonho; Qiu, Xuepeng; Yang, Ping; Kawai, Hiroyo; Saeys, Mark; Ahn, Jong-Hyun; Yang, Hyunsoo

    2016-07-01

    Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Magnetic tunnel junction based spintronic logic devices

    Science.gov (United States)

    Lyle, Andrew Paul

    The International Technology Roadmap for Semiconductors (ITRS) predicts that complimentary metal oxide semiconductor (CMOS) based technologies will hit their last generation on or near the 16 nm node, which we expect to reach by the year 2025. Thus future advances in computational power will not be realized from ever-shrinking device sizes, but rather by 'outside the box' designs and new physics, including molecular or DNA based computation, organics, magnonics, or spintronic. This dissertation investigates magnetic logic devices for post-CMOS computation. Three different architectures were studied, each relying on a different magnetic mechanism to compute logic functions. Each design has it benefits and challenges that must be overcome. This dissertation focuses on pushing each design from the drawing board to a realistic logic technology. The first logic architecture is based on electrically connected magnetic tunnel junctions (MTJs) that allow direct communication between elements without intermediate sensing amplifiers. Two and three input logic gates, which consist of two and three MTJs connected in parallel, respectively were fabricated and are compared. The direct communication is realized by electrically connecting the output in series with the input and applying voltage across the series connections. The logic gates rely on the fact that a change in resistance at the input modulates the voltage that is needed to supply the critical current for spin transfer torque switching the output. The change in resistance at the input resulted in a voltage margin of 50--200 mV and 250--300 mV for the closest input states for the three and two input designs, respectively. The two input logic gate realizes the AND, NAND, NOR, and OR logic functions. The three input logic function realizes the Majority, AND, NAND, NOR, and OR logic operations. The second logic architecture utilizes magnetostatically coupled nanomagnets to compute logic functions, which is the basis of

  14. Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

    OpenAIRE

    Moser, J.; Zenger, M.; Gerl, C.; Schuh, D.; Meier, R.; Chen, P.; Bayreuther, G.; Wegscheider, W.; Weiss, D; Lai, C. -H.; Huang, R. -T.; Kosuth, M.; Ebert, H.

    2006-01-01

    We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at a Fe/GaAs interfac...

  15. Dependence of transport properties in tunnel junction on boron doping

    Energy Technology Data Exchange (ETDEWEB)

    Shi, M.J.; Zeng, X.B.; Liu, S.Y.; Peng, W.B; Xiao, H.B; Liao, X.B.; Wang, Z.G.; Kong, G.L. [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2010-04-15

    Boron-doped hydrogenated silicon films with different gaseous doping ratio (B{sub 2}H{sub 6}/SiH{sub 4}) were fabricated as recombination p layers in tunnel junctions. The measurements of I-V characteristics of the junctions and transparency spectra of p layer indicated that the best gaseous doping ratio of the recombination layer is 0.04, which is correlated to the degradation of short range order (SRO) in the inserted p thin film. The junction with such recombination layer has small resistance, near ohmic contact. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Flicker (1/f) noise in tunnel junction DC SQUIDS

    Energy Technology Data Exchange (ETDEWEB)

    Koch, R.H.; Clarke, J.; Goubau, W.M.; Martinis, J.M.; Pegrum, C.M.; Van Harlingen, D.J.

    1983-04-01

    We have measured the spectral density of the 1/f voltage noise in current-biased resistively shunted Josephson tunnel junctions and dc SQUIDs. A theory in which fluctuations in the temperature give rise to fluctuations in the critical current and hence in the voltage predicts the magnitude of the noise quite accurately for junctions with areas of about 2 x 10/sup 4/ ..mu..m/sup 2/, but significantly overestimates the noise for junctions with areas of about 6 ..mu..m/sup 2/. DC SQUIDs fabricated from these two types of junctions exhibit substantially more 1/f voltage noise than would be predicted from a model in which the noise arises from critical current fluctuations in the junctions. This result was confirmed by an experiment involving two different bias current and flux modulation schemes, which demonstrated that the predominant 1/f voltage noise arises not from critical current fluctuations, but from some unknown source that can be regarded as an apparent 1/f flux noise. Measurements on five different configurations of dc SQUIDs fabricated with thin-film tunnel junctions and with widely varying areas, inductances, and junction capacitances show that the spectral density of the 1/f equivalent flux noise is roughtly constant, within a factor of three of (10/sup -10//f)phi/sup 2//sub 0/Hz/sup -1/. It is emphasized that 1/f flux noise may not be the predominant source of 1/f noise in SQUIDS fabricated with other technologies.

  17. Multiband model for tunneling in MgB2 junctions

    NARCIS (Netherlands)

    Brinkman, A.; Golubov, A.A.; Rogalla, H.; Dolgov, O.V.; Kortus, J.; Kong, Y.; Jepsen, O.; Andersen, O.K.

    2002-01-01

    A theoretical model for quasiparticle and Josephson tunneling in multiband superconductors is developed and applied to MgB2-based junctions. The gap functions in different bands in MgB2 are obtained from an extended Eliashberg formalism, using the results of band structure calculations. The temperat

  18. Spin-transfer torque in spin filter tunnel junctions

    KAUST Repository

    Ortiz Pauyac, Christian

    2014-12-08

    Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

  19. Josephson tunnel junctions in a magnetic field gradient

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, Jesper; Koshelets, V.P.

    2011-01-01

    We measured the magnetic field dependence of the critical current of high-quality Nb-based planar Josephson tunnel junctions in the presence of a controllable nonuniform field distribution. We found skewed and slowly changing magnetic diffraction patterns quite dissimilar from the Fraunhofer-like...... be suppressed by an asymmetric magnetic field profile. © 2011 American Institute of Physics....

  20. Thermally induced dynamics in ultrathin magnetic tunnel junctions

    NARCIS (Netherlands)

    Ogrodnik, P.; Bauer, G.E.W.; Xia, K.

    2013-01-01

    We consider the magnetization dynamics induced by thermally induced spin transfer torques in thin Fe|MgO|Fe tunnel junctions. The magnetization dynamics is described by the Landau-Lifshitz-Gilbert equation, including the thermal torques as computed from first principles. We show that the angular ske

  1. Direct detection at submillimetre wavelengths using superconducting tunnel junctions

    NARCIS (Netherlands)

    Withington, S; Isaak, KG; Kovtonyuk, SA; Panhuyzen, RA; Klapwijk, TM

    1995-01-01

    Superconducting tunnel-junction direct detectors are considered in some detail. For frequencies below twice that of the gap there is some bias voltage for which the input impedance is real, the responsivity quantum limited, and the dynamic range high. A susperconducting detector saturates for two re

  2. Fluxon dynamics in long annular Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Martucciello, N.; Mygind, Jesper; Koshelets, V.P.

    1998-01-01

    Single-fluxon dynamics has been experimentally investigated in high-quality Nb/Al-AlOx/Nb annular Josephson tunnel junctions having a radius much larger than the Josephson penetration depth. Strong evidence of self-field effects is observed. An external magnetic field in the barrier plane acts...

  3. Measuring the momentum of a nanomechanical oscillator using tunnel junctions

    Science.gov (United States)

    Doiron, Charles; Trauzettel, Bjoern; Bruder, Christoph

    2008-03-01

    We present a way to measure the momentum p of a nanomechanical oscillatorootnotetextC. B. Doiron, B. Trauzettel, C. Bruder. arXiv:0707.2709.. The momentum detector is based on two tunnel junctions in an Aharonov-Bohm-type setup, where one of the tunneling amplitudes depends on the motion of the oscillator and the other one does not. The coupling between the first tunnel junction and the oscillator is assumed to be linear in the position x of the oscillator t(x) = t0+ t1x. However, the presence of two junctions can, under certain conditions, lead to an effective imaginary coupling t(x) = t0+ i t1x. By calculating the equation-of-motion for the density matrix of the coupled (oscillator+tunnel junction) systemootnotetextA.A Clerk, S. Girvin. Phys. Rev. B 70, 121303 (2004)., we show that in this case the finite-frequency current noise of the detector is proportional to the momentum spectrum of the oscillator.

  4. Fluxon propagation and Fiske steps in long Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Erné, S. N.; Ferrigno, A.; Parmentier, R. D.

    1983-01-01

    The dynamical behavior of fluxons propagating in the presence of an applied magnetic field on an overlap-geometry Josephson tunnel junction of length 5λJ having a McCumber βc=5π is studied by numerical integration of the circuit equations of a 50-section lumped RSJ-type (resistive shunted junctio...

  5. Development of the tunneling junction simulation environment for scanning tunneling microscope evaluation

    Science.gov (United States)

    Gajewski, Krzysztof; Piasecki, Tomasz; Kopiec, Daniel; Gotszalk, Teodor

    2017-03-01

    Proper configuration of scanning tunneling microscope electronics plays an important role in the atomic scale resolution surface imaging. Device evaluation in the tunneling contact between scanning tip and sample may be prone to the surface quality or mechanical disturbances. Thus the use of tunneling junction simulator makes electronics testing more reliable and increases its repeatability. Here, we present the theoretical background enabling the proper selection of electronic components circuitry used as a tunneling junction simulator. We also show how to simulate mechanics related to the piezoelectric scanner, which is applied in real experiments. Practical use of the proposed simulator and its application in metrological characterization of the developed scanning tunneling microscope is also shown.

  6. Fabrication and characterization of high current-density, submicron, NbN/MgO/NbN tunnel junctions

    Science.gov (United States)

    Stern, J. A.; Leduc, Henry G.; Judas, A. J.

    1992-01-01

    At near-millimeter wavelengths, heterodyne receivers based on SIS tunnel junctions are the most sensitive available. However, in order to scale these results to submillimeter wavelengths, certain device properties should be scaled. The tunnel-junction's current density should be increased to reduce the RC product. The device's area should be reduced to efficiently couple power from the antenna to the mixer. Finally, the superconductor used should have a large energy gap to minimize RF losses. Most SIS mixers use Nb or Pb-alloy tunnel junctions; the gap frequency for these materials is approximately 725 GHz. Above the gap frequency, these materials exhibit losses similar to those in a normal metal. The gap frequency in NbN films is as-large-as 1440 GHz. Therefore, we have developed a process to fabricate small area (down to 0.13 sq microns), high current density, NbN/MgO/NbN tunnel junctions.

  7. Spatial dependence of plasma oscillations in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Holst, Thorsten; Hansen, Jørn Bindslev

    1991-01-01

    We report on direct measurements of the plasma oscillations in Josephson tunnel junctions of various spatial dimensions. The effect of the spatial variation of the Cooper-pair phase difference (the Josephson phase) on the dynamics of the junction was investigated by application of a static magnetic...... field threading the tunneling barrier. We compare measurements where the plasma frequency was tuned either by applying a magnetic field or by raising the temperature. A crossover from short- to long-junction behavior of the functional dependence of the plasma oscillations was observed in the case...... of an applied magnetic field. Numerical simulations of the governing partial-differential sine-Gordon equation were performed and compared to the experimental results and a perturbation analysis. The theoretical results support the experiments and allow us to interpret the observed crossover as due...

  8. Tunnel junctions for InP-on-Si solar cells

    Science.gov (United States)

    Keavney, C.; Vernon, S.; Haven, V.

    1991-01-01

    Growing, by metalorganic chemical vapor deposition, a tunnel junction is described, which makes possible and ohmic back contact in an n-on-p InP solar cell on a silicon substrate. The junction between heavily doped layers of p-type InGaAs and n-type InP shows resistance low enough not to affect the performance of these cells. InP solar cells made on n-type Si substrates with this structure were measured with an efficiency of 9.9 percent. Controls using p-type GaAs substrates showed no significant difference in cell performance, indicating that the resistance associated with the tunnel junction is less than about 0.1 ohm/sq cm.

  9. Fabrication of High-Quality Niobium Superconducting Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    XU Qin-Yin; CAO Chun-Hai; LI Meng-Yue; JIANG Yi; ZHA Shi-Tong; KANG Lin; XU Wei-Wei; CHEN Jian; WU Pei-Heng

    2011-01-01

    @@ For high-quality superconducting tunnel junctions(STJS), it is necessary to reduce leakage current as much as possible.We describe the fabrication of niobium STJs using the selective niobium(Nb) etching process and various ways to minimize the leakage current.The experiment shows that the leakage current mainly comes from shorts in the tunnel barrier layer rather than those around the junction edges.Through systematic analysis of the thin film stress, surface morphology and modified junction structures, we fabricate high-quality Nb STJs with a gap voltage of 2.8 mV and a leakage current at 1 m V as low as 8.1 % and 0.023% at 4.2K and 0.3 K, respectively.

  10. Soliton excitations in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

    1982-01-01

    on the Nth ZFS yields the frequency Nf1 Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L / λJ=6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via...

  11. All-carbon molecular tunnel junctions.

    Science.gov (United States)

    Yan, Haijun; Bergren, Adam Johan; McCreery, Richard L

    2011-11-30

    This Article explores the idea of using nonmetallic contacts for molecular electronics. Metal-free, all-carbon molecular electronic junctions were fabricated by orienting a layer of organic molecules between two carbon conductors with high yield (>90%) and good reproducibility (rsd of current density at 0.5 V carbon devices exhibit current density-voltage (J-V) behavior similar to those with metallic Cu top contacts. However, the all-carbon devices display enhanced stability to bias extremes and greatly improved thermal stability. Completed carbon/nitroazobenzene(NAB)/carbon junctions can sustain temperatures up to 300 °C in vacuum for 30 min and can be scanned at ±1 V for at least 1.2 × 10(9) cycles in air at 100 °C without a significant change in J-V characteristics. Furthermore, these all-carbon devices can withstand much higher voltages and current densities than can Cu-containing junctions, which fail upon oxidation and/or electromigration of the copper. The advantages of carbon contacts stem mainly from the strong covalent bonding in the disordered carbon materials, which resists electromigration or penetration into the molecular layer, and provides enhanced stability. These results highlight the significance of nonmetallic contacts for molecular electronics and the potential for integration of all-carbon molecular junctions with conventional microelectronics.

  12. NbN/MgO/NbN edge-geometry tunnel junctions

    Science.gov (United States)

    Hunt, B. D.; Leduc, H. G.; Cypher, S. R.; Stern, J. A.; Judas, A.

    1989-01-01

    The fabrication and low-frequency testing of the first edge-geometry NbN/MgO/NbN superconducting tunnel junctions are reported. The use of an edge geometry allows very small junction areas to be obtained, while the all-NbN electrodes permit operation at 8-10 K with a potential maximum operating frequency above 1 THz. Edge definition in the base NbN film was accomplished utilizing Ar ion milling with an Al2O3 milling mask, followed by a lower energy ion cleaning step. This process has produced all-refractory-material tunnel junctions with areas as small as 0.1 sq micron, resistance-area products less than 21 ohm sq micron, and subgap to normal state resistance ratios larger than 18.

  13. Seebeck Effect in Magnetic Tunnel Junctions

    OpenAIRE

    Walter, Marvin; Walowski, Jakob; Zbarsky, Vladyslav; Münzenberg, Markus; Schäfers, Markus; Ebke, Daniel; Reiss, Günter; Thomas, Andy; Peretzki, Patrick; Seibt, Michael; Moodera, Jagadeesh S.; Czerner, Michael; Bachmann, Michael; Heiliger, Christian

    2011-01-01

    Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel j...

  14. Electromagnetic environment and Peltier effect in normal-metal/insulator/superconductor junction

    Science.gov (United States)

    Bardas, Athanassios

    1997-07-01

    The influence of external environment on the heat transport through a tunnel junction connecting a normal-metal and a superconductor is analyzed theoretically. It is demonstrated that at finite temperatures finite impedance of the junction electrodes, limits the maximum amount of heat that can be extracted from the normal-metal via the electric current and thus reduces the efficiency of the thermoelectric electron refrigeration. This behaviour is more pronounced for charging energies Ec of the junction, larger than the superconducting gap Δ and persists for a wide range of values of the impedance.

  15. Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2012-06-01

    In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

  16. Investigation of 1/f noise in tunnel junction dc SQUIDS

    Energy Technology Data Exchange (ETDEWEB)

    Koch, R.; Clarke, J.; Goubau, W.; Harlingen; Martinis, J.; Pegrum, C.

    1983-05-01

    The authors describe two methods of measuring the 1/f noise in a dc SQUID. One is sensitive only to 1/f noise in the critical currents of the junctions, and the other is sensitive only to 1/f flux noise that is not associated with critical current fluctuations. From measurements on a planar thin-film dc SQUID incorporating Josephson tunnel junctions the authors conclude that the predominant source of 1/f noise is not noise in the critical currents, but rather an apparent flux noise of unknown origin.

  17. Electric field modulation of tunneling anisotropic magnetoresistance in tunnel junctions with antiferromagnetic electrodes

    Science.gov (United States)

    Goto, Minori; Nawaoka, Kohei; Miwa, Shinji; Hatanaka, Shohei; Mizuochi, Norikazu; Suzuki, Yoshishige

    2016-08-01

    We present electric field modulation of tunneling anisotropic magnetoresistance (TAMR) in MnIr|MgO|Ta tunnel junctions. TAMR enables direct observation of the antiferromagnetic spin direction at the MnIr|MgO interface. We found that the shape of magnetoresistance (MR) curve can be modulated by an electric field, which can be explained by electric field modulation of the interfacial magnetic anisotropy at MnIr|MgO.

  18. Engineering ferroelectric tunnel junctions through potential profile shaping

    Energy Technology Data Exchange (ETDEWEB)

    Boyn, S.; Garcia, V., E-mail: vincent.garcia@thalesgroup.com; Fusil, S.; Carrétéro, C.; Garcia, K.; Collin, S.; Deranlot, C.; Bibes, M.; Barthélémy, A. [Unité Mixte de Physique CNRS/Thales, 1 Av. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France); Xavier, S. [Thales Research and Technology, 1 Av. Fresnel, 91767 Palaiseau (France)

    2015-06-01

    We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  19. Engineering ferroelectric tunnel junctions through potential profile shaping

    Directory of Open Access Journals (Sweden)

    S. Boyn

    2015-06-01

    Full Text Available We explore the influence of the top electrode materials (W, Co, Ni, Ir on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO3. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  20. Spin transfer torque with spin diffusion in magnetic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2012-08-09

    Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

  1. Magnetoresistance of galfenol-based magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Rafaqat, H. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); ICTP, Trieste (Italy); Roddaro, S. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, 56127 Pisa (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universités, UPMC Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris, 75005, Paris (France)

    2015-12-15

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  2. Room Temperature Magnetic Barrier Layers in Magnetic Tunnel Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Nelson-Cheeseman, B. B.; Wong, F. J.; Chopdekar, R. V.; Arenholz, E.; Suzuki, Y.

    2010-03-09

    We investigate the spin transport and interfacial magnetism of magnetic tunnel junctions with highly spin polarized LSMO and Fe3O4 electrodes and a ferrimagnetic NiFe2O4 (NFO) barrier layer. The spin dependent transport can be understood in terms of magnon-assisted spin dependent tunneling where the magnons are excited in the barrier layer itself. The NFO/Fe3O4 interface displays strong magnetic coupling, while the LSMO/NFO interface exhibits clear decoupling as determined by a combination of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. This decoupling allows for distinct parallel and antiparallel electrode states in this all-magnetic trilayer. The spin transport of these devices, dominated by the NFO barrier layer magnetism, leads to a symmetric bias dependence of the junction magnetoresistance at all temperatures.

  3. Experiments on non-equilibrium superconductor-normal metal-superconductor Josephson junctions

    Science.gov (United States)

    Crosser, Michael S.

    By controlling the distribution function within the normal metal of a superconductor/normal metal/superconductor (SNS) Josephson junction, one can reverse the supercurrent-phase relation in the normal wire, creating a pi-junction. This manipulation is done by injecting normal quasiparticle current into the wire, via one or more leads attached at the middle of the junction. Two experiments evolve from this concept. First, in a sample of four reservoirs, two normal and two superconducting, all connected by a wire cross of normal metal, one may inject current either antisymmetrically (AS) or symmetrically (S). In the AS case, current is injected into one normal lead and extracted from the other, creating normal current flow that does not interact with the supercurrent except at the junction. In the S case, current is injected into both normal leads and extracted from the superconductors. Theory predicts that, in the absence of electron energy relaxation in the normal part of the junction, these two situations should result in identical behavior of the Josephson junction. However, due to Joule heating, the S case shows a slightly larger maximum pi-current than the AS case. The second experiment considers a more subtle effect resulting from normal current being injected symmetrically into a SNS Josephson junction. One side of the SNS junction has both normal current and supercurrent flowing in the same direction while the other side has opposing current flows. This situation creates an effective energy gradient across the SNS junction that can appear in the distribution function of the normal wire. Using superconductor/insulator/normal metal tunnelling spectroscopy, it is possible to extract these changes to the distribution function.

  4. FeGa based tunneling magnetoresistance junctions and strain sensors

    OpenAIRE

    Thajudin, Ahmed Fazir

    2012-01-01

    Tunnel magnetoresistance (TMR) and inverse magnetostriction based strain gauges have gained immense importance due to their high spatial resolution and extremely high gauge factors. A TMR junction comprises of two ferromagnetic electrodes separated by an insulating barrier layer. One of the ferromagnetic layer is soft magnetic which is free to rotate its magnetization under external magnetic field, the other ferromagnet is hard magnetic and is stable under the same external field. An intentio...

  5. Field-like spin torque in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Y-H; Kioussis, N; Kalitsov, A [Department of Physics, California State University, Northridge, CA 91330-8268 (United States); Butler, W H [MINT Center, University of Alabama, P. O. Box 870209, Tuscaloosa, AL (United States); Car, R, E-mail: nick.kioussis@csun.ed [Department of Chemistry, Princeton University, Princeton, New Jersey 08544-0001 (United States)

    2010-01-01

    We show that the exchange splitting asymmetry between the left and right ferromagnetic leads in non-collinear magnetic tunnel junctions (MTJ) tunes the bias behavior of the field-like spin torque, T{sub p}erpendicular. These results can be understood by our recently derived general expression, which relates the non-collinear T{sub p}erpendicular to the algebraic sum of four independent non-equilibrium interlayer exchange couplings (IEC) solely in collinear configurations.

  6. Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge Using AMPS-1D

    Directory of Open Access Journals (Sweden)

    Benmoussa Dennai

    2014-11-01

    Full Text Available The development of the tunnel junction interconnect was key the first two-terminal monolithic, multi-junction solar cell development. This paper describes simulation for the tunnel junction (GaAs between top cell (GaAs and bottom cell (Ge. This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D. In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V characteristics and quantum efficiency (QE.

  7. Theoretical Approach to Electroresistance in Ferroelectric Tunnel Junctions

    Science.gov (United States)

    Chang, Sou-Chi; Naeemi, Azad; Nikonov, Dmitri E.; Gruverman, Alexei

    2017-02-01

    In this paper, a theoretical approach comprising the nonequilibrium Green's function method for electronic transport and the Landau-Khalatnikov equation for electric polarization dynamics is presented to describe polarization-dependent tunneling electroresistance (TER) in ferroelectric tunnel junctions. Using appropriate contact, interface, and ferroelectric parameters, the measured current-voltage characteristic curves in both inorganic (Co /BaTi O3/La0.67Sr0.33 MnO3 ) and organic (Au /PVDF /W ) ferroelectric tunnel junctions can be well described by the proposed approach. Furthermore, under this theoretical framework, the controversy of opposite TER signs observed experimentally by different groups in Co /BaTi O3/La0.67Sr0.33 MnO3 systems is addressed by considering the interface termination effects using the effective contact ratio defined through the effective screening length and dielectric response at the metal-ferroelectric interfaces. Finally, our approach is extended to investigate the role of a CoOx buffer layer at the Co /BaTi O3 interface in a ferroelectric tunnel memristor. It is shown that in order to have a significant memristor behavior not only the interface oxygen vacancies but also the CoOx layer thickness may vary with the applied bias.

  8. Scale invariance of a diode-like tunnel junction

    Science.gov (United States)

    Cabrera, Hugo; Zanin, Danilo Andrea; de Pietro, Lorenzo Giuseppe; Michaels, Thomas; Thalmann, Peter; Ramsperger, Urs; Vindigni, Alessandro; Pescia, Danilo

    2013-03-01

    In Near Field-Emission SEM (NFESEM), electrostatic considerations favor a diode-like tunnel junction consisting of an atomic-sized source mounted at the apex of a thin wire placed at nanometric distances from a collector. The quantum mechanical tunnel process, instead, can provide a barrier toward miniaturization. In the first place, it deteriorates the generation of electrons by introducing non-linearities within the classically forbidden zone that exponentially increase with decreasing sizes. In addition, in the direct tunnelling regime, i.e. when the distance between emitter and collector d approaches the subnanometer range, a characteristic length appears, making the cross-over from the (almost) scale-invariant electric-field assisted regime to the essentially different STM-regime. We have observed that the experimental data relating the current I to the two experimental variables V (bias voltage between tip and collector) and d can be made (almost) collapse onto a ``scaling curve'' relating I to the single variable V .d-λ , λ being some exponent that depends solely on the geometry of the junction. This scaling property can be used to highlight non-linear aspects of the quantum mechanical tunnelling process.

  9. Coexistence of tunneling magnetoresistance and Josephson effects in SFIFS junctions

    Science.gov (United States)

    Vávra, O.; Soni, R.; Petraru, A.; Himmel, N.; Vávra, I.; Fabian, J.; Kohlstedt, H.; Strunk, Ch.

    2017-02-01

    We demonstrate an integration of tunneling magnetoresistance and the Josephson effects within one tunneling junction. Several sets of Nb-Fe-Al-Al2O3-Fe-Nb wafers with varying Al and Fe layers thickness were prepared to systematically explore the competition of TMR and Josephson effects. A coexistence of the critical current IC(dFe) and the tunneling magnetoresistance ratio T M R(dFe) is observed for iron layer dFe thickness range 1.9 and 2.9 nm. Further optimization such as thinner Al2O3 layer leads to an enhancement of the critical current and thus to an extension of the coexistence regime up to dFe≃3.9 nm Fe.

  10. Magnetic tunnel junctions with integrated thermometers for magnetothermopower measurements

    Science.gov (United States)

    Böhnert, T.; Serrano-Guisan, S.; Paz, E.; Lacoste, B.; Ferreira, R.; Freitas, P. P.

    2017-05-01

    Magnetic tunnel junction (MTJ) micropillars were fabricated with integrated thermometers and a heater line (HL) for thermovoltage measurements. This novel thermometer configuration enabled a direct measurement of ΔT across the MTJ micropillar. The MTJ devices were patterned from a CoFeB/MgO/CoFeB stack, with a 1.2 nm to 1.6 nm MgO wedge across the wafer, resulting in resistance area products in the range of 0.7 kΩ · µm2  MTJ structure and the thermopower were estimated with a noticeable improvement of the measurement accuracy. The studied MTJ structures showed tunneling magnetoresistance (TMR) ratios up to 125%, and tunneling magnetothermopower (TMTP) up to 35%.

  11. Impurity-limited quantum transport variability in magnetic tunnel junctions

    Science.gov (United States)

    Zhuang, Jianing; Wang, Yin; Zhou, Yan; Wang, Jian; Guo, Hong

    2017-08-01

    We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel magnetoresistance ratio (TMR) and the average values and variances of the currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/Fe MTJ. Further, we predicted that N-doped MgO can improve the performance of a doped Fe/MgO/Fe MTJ. Our firstprinciples calculations of the fluctuations of the on/off currents and STT provide vital information for future predictions of the long-term reliability of spintronic devices, which is imperative for high-volume production.

  12. Giant thermal spin-torque-assisted magnetic tunnel junction switching.

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P; Yang, See-Hun; Parkin, Stuart S P

    2015-05-26

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

  13. Quantum critical points in tunneling junction of topological superconductor and topological insulator

    Energy Technology Data Exchange (ETDEWEB)

    Zuo, Zheng-Wei, E-mail: zuozw@163.com [School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003 (China); National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Kang, Da-wei [School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003 (China); Wang, Zhao-Wu [School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003 (China); National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Li, Liben [School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003 (China)

    2016-08-26

    The tunneling junction between one-dimensional topological superconductor and integer (fractional) topological insulator (TI), realized via point contact, is investigated theoretically with bosonization technology and renormalization group methods. For the integer TI case, in a finite range of edge interaction parameter, there is a non-trivial stable fixed point which corresponds to the physical picture that the edge of TI breaks up into two sections at the junction, with one side coupling strongly to the Majorana fermion and exhibiting perfect Andreev reflection, while the other side decouples, exhibiting perfect normal reflection at low energies. This fixed point can be used as a signature of the Majorana fermion and tested by nowadays experiment techniques. For the fractional TI case, the universal low-energy transport properties are described by perfect normal reflection, perfect Andreev reflection, or perfect insulating fixed points dependent on the filling fraction and edge interaction parameter of fractional TI. - Highlights: • Tunneling junctions between topological superconductor and topological insulator are investigated. • There is a non-trivial stable fixed point in integer topological insulator case at low energies. • The edge of topological insulator breaks up into two sections at the junction. • One side couples strongly to the Majorana fermion and exhibits perfect Andreev reflection. • The other side decouples and exhibits perfect normal reflection.

  14. Thermal electric effects in Fe|GaAs|Fe tunnel junctions

    Directory of Open Access Journals (Sweden)

    Xintao Jia

    2012-12-01

    Full Text Available We study the spin polarized thermoelectric effects on Fe|GaAs|Fe tunnel junction using a generalized Landauer-Büttiker formalism, where the energy flow is described on the same footing as the electric current. The Seebeck coefficient of tunnel junction will change sign as the GaAs thickness increases. We demonstrate the thermally induced STT on Fe|GaAs|Fe tunnel junction is robust against the interfacial defects and is non-negligible.

  15. Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction

    OpenAIRE

    Xu, Rui; Bai, Ke-Ke; Nie, Jia-Cai; He, Lin

    2012-01-01

    Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanori...

  16. Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes

    NARCIS (Netherlands)

    Lee, Y.J.; Abhishek Kumar, A.K.; Kumar, A.; Vera Marun, I.J.; de Jong, Machiel Pieter; Jansen, R.

    2010-01-01

    Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a

  17. Thermopower of molecular junctions: Tunneling to hopping crossover in DNA

    Science.gov (United States)

    Korol, Roman; Kilgour, Michael; Segal, Dvira

    2016-12-01

    We study the electrical conductance G and the thermopower S of single-molecule junctions and reveal signatures of different transport mechanisms: off-resonant tunneling, on-resonant coherent (ballistic) motion, and multi-step hopping. These mechanisms are identified by studying the behavior of G and S while varying molecular length and temperature. Based on a simple one-dimensional model for molecular junctions, we derive approximate expressions for the thermopower in these different regimes. Analytical results are compared to numerical simulations, performed using a variant of Büttiker's probe technique, the so-called voltage-temperature probe, which allows us to phenomenologically introduce environmentally induced elastic and inelastic electron scattering effects, while applying both voltage and temperature biases across the junction. We further simulate the thermopower of GC-rich DNA sequences with mediating A:T blocks and manifest the tunneling-to-hopping crossover in both the electrical conductance and the thermopower, in accord with measurements by Li et al. [Nat. Commun. 7, 11294 (2016)].

  18. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    Science.gov (United States)

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-12-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature.

  19. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  20. Direct detection at submillimetre wavelengths using superconducting tunnel junctions

    Science.gov (United States)

    Withington, S.; Isaak, K. G.; Kovtonyuk, S. A.; Panhuyzen, R. A.; Klapwijk, T. M.

    1995-12-01

    Superconducting tunnel-junction direct detectors are considered in some detail. For frequencies below twice that of the gap there is some bias voltage for which the input impedance is real, the responsivity quantum limited, and the dynamic range high. A susperconducting detector saturates for two reasons: intrinsic saturation due to the relative increase in two-photon tunnelling processes, and extrinsic saturation due to the input match changing with bias voltage. The responsivity of a detector with a resistive RF source is least sensitive to bias-voltage changes and has the greatest dynamic range when operating with a sloping load line. In the case of an inductive source, the dynamic range can be higher than the intrinsic saturation rate would suggest. Ideally, superconducting tunnel-junction detectors should be biased in a constant-voltage mode. If the responsivity is to be depressed by no more than a few percent, the photon step should have a height which is no more than one quarter of the total current turn-on at the gap. Superconducting direct detectors can be used to make precise and well-calibrated optical measurements at submillimetre wavelengths.

  1. Backhopping in magnetic tunnel junctions: Micromagnetic approach and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Frankowski, Marek, E-mail: wsong@unb.ca; Skowroński, Witold; Czapkiewicz, Maciej; Stobiecki, Tomasz

    2015-01-15

    Micromagnetic simulations of Current Induced Magnetization Switching (CIMS) loops in CoFeB/MgO/CoFeB exchange-biased Magnetic Tunnel Junctions (MTJ) are discussed. Our model uses the Landau–Lifshitz–Gilbert equation with the Slonczewski's Spin-Transfer-Torque (STT) component. The current density for STT is calculated from the applied bias voltage and tunnel magnetoresistance which depends on the local magnetization vectors arrangement. We take into account the change in the anti-parallel state resistance with increasing bias voltage. Using such model we investigate influence of the interlayer exchange coupling, between free and reference layers across the barrier, on the backhopping effect in anti-parallel to parallel switching. We compare our simulated CIMS loops with the experimental data obtained from MTJs with different MgO barrier thicknesses. - Highlights: • We model Current Induced Magnetization Switching in magnetic tunnel junctions. • We investigate interlayer exchange coupling influence on backhopping effect. • Experimental results are reproduced with good qualitative agreement. • Ferromagnetic coupling decreases backhopping occurrence probability.

  2. Probing momentum distributions in magnetic tunnel junctions via hot-electron decay

    NARCIS (Netherlands)

    Jansen, R.; Banerjee, T.; Park, B.G.; Lodder, J.C.

    2007-01-01

    The tunnel momentum distribution in a (magnetic) tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid stat

  3. Tunnel magnetoresistance in magnetic tunnel junctions with ZnS barrier

    Energy Technology Data Exchange (ETDEWEB)

    Guth, M.; Da Costa, V.; Schmerber, G.; Dinia, A.; van den Berg, H. A. M.

    2001-06-01

    A first experimental evidence of a significant tunneling magnetoresistance signal of about 5% at 300 K for a magnetic tunnel junction consisting of hard and soft magnetic layers separated by a 2 nm ZnS semiconducting barrier is reported. The samples have been grown by sputtering on Si(111) substrate at room temperature and have the following structure: Fe{sub 6nm}Cu{sub 30nm}CoFe{sub 1.8nm}Ru{sub 0.8nm}CoFe{sub 3nm}ZnS{sub x}CoFe{sub 1nm}Fe{sub 4nm}Cu{sub 10nm}Ru{sub 3nm}. The hard magnetic bottom electrode consists of the artificial antiferromagnetic structure in which the rigidity is ensured by the antiferromagnetic exchange coupling between two FeCo layers through a Ru spacer layer. Barrier impedance scanning microscope (BISM) measurements reveal a good homogeneity of the barrier thickness. Electric transport measurements over square tunnel elements with lateral sizes between 3 and 100 {mu}m, exhibit a typical tunnel current{endash}voltage variations and tunnel resistance of 2{endash}3 k{Omega}{mu}m2 with small variations which never exceed a factor of 2, which is in good agreement with the BISM results. This good reproducibility of the junctions is very promising for MRAMs and transistors applications. {copyright} 2001 American Institute of Physics.

  4. Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions

    CERN Document Server

    Liu, R S; Canali, C M; Samuelson, L; Pettersson, H

    2008-01-01

    We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.

  5. Electronic transport through EuO spin filter tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Jutong, Nuttachai; Eckern, Ulrich [Institut fuer Physik, Universitaet Augsburg, 86135 Augsburg (Germany); Rungger, Ivan; Sanvito, Stefano [School of Physics and CRANN, Trinity College Dublin, Dublin (Ireland); Schwingenschloegl, Udo [KAUST, PSE Division, Thuwal 23955-6900, Kingdom of Saudi Arabia (Saudi Arabia)

    2012-07-01

    Spin filter tunnel junctions based on europium monoxide (EuO), a ferromagnetic semiconductor, are investigated by means of density functional theory. In particular, the spin transport of Cu/EuO/Cu junctions is investigated by using the self-consistent ab-initio electron transport code SMEAGOL. The dependence of the transmission coefficient on the interface spacing and on the EuO thickness is studied, and explained in terms of the density of states and the complex band structure of EuO. Our calculation indicates that EuO epitaxially grown on Cu can act as a perfect spin filter, with polarization close to 100%, which is related mainly to the Eu-4f states. The transmission coefficient is sensitive to the interface spacing, since this spacing determines the charge transfer between EuO and the Cu leads.

  6. Neural coding using telegraphic switching of magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Suh, Dong Ik; Bae, Gi Yoon; Oh, Heong Sik; Park, Wanjun, E-mail: wanjun@hanyang.ac.kr [Department of Electronic Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-05-07

    In this work, we present a synaptic transmission representing neural coding with spike trains by using a magnetic tunnel junction (MTJ). Telegraphic switching generates an artificial neural signal with both the applied magnetic field and the spin-transfer torque that act as conflicting inputs for modulating the number of spikes in spike trains. The spiking probability is observed to be weighted with modulation between 27.6% and 99.8% by varying the amplitude of the voltage input or the external magnetic field. With a combination of the reverse coding scheme and the synaptic characteristic of MTJ, an artificial function for the synaptic transmission is achieved.

  7. Quasiparticle tunneling in a periodically driven bosonic Josephson junction

    Science.gov (United States)

    Gertjerenken, Bettina; Holthaus, Martin

    2014-11-01

    A resonantly driven bosonic Josephson junction supports stable collective excitations, or quasiparticles, which constitute analogs of the Trojan wave packets previously explored with Rydberg atoms in strong microwave fields. We predict a quantum beating effect between such symmetry-related many-body Trojan states taking place on time scales which are long in comparison with the driving period. Within a mean-field approximation, this quantum beating can be regarded as a manifestation of dynamical tunneling. On the full N -particle level, the beating phenomenon leads to an experimentally feasible, robust strategy for probing highly entangled mesoscopic states.

  8. NbN/MgO/NbN SIS tunnel junctions for submm wave mixers

    Science.gov (United States)

    Stern, J. A.; Hunt, B. D.; Leduc, H. G.; Judas, A.; Mcgrath, W. R.; Cypher, S. R.; Khanna, S. K.

    1989-01-01

    The authors report on the fabrication and testing of all-refractory NbN/MgO/NbN SIS (superconductor-insulator-superconductor) tunnel junctions for use as high-frequency mixers. Progress in the development of techniques for the fabrication of submicron-area tunnel junctions is described. Junction structures which have been investigated include mesa, crossline, and edge geometries. Using reactive sputtering techniques, NbN tunnel junctions with critical currents in excess of 104 A/sq cm have been fabricated with Vm values as high as 65 mV and areas down to 0.1 sq micron. Specific capacitance measurements on NbN/MgO/NbN mesa-type tunnel junctions give values in the range 60-90 fF/sq micron. These SIS tunnel junctions have been integrated with antennas and coupling structures for mixer tests in a waveguide receiver at 207 GHz. Preliminary mixer results are reported.

  9. Minimization of the energy costs for operating magnetic tunnel junctions

    Science.gov (United States)

    Farhat, Ilyas A. H.; Gale, E.; Isakovic, A. F.

    2015-03-01

    Increasing prospects of utilizing the STT-MRAM calls for the re-assessment of the overall energy (power) cost of operating magnetic tunnel junctions and related elements. This motivates our design, nanofabrication and characterization of simple tri-layer magnetic tunnel junctions which show measurable decrease in the operating energy cost. The MTJs we report about rely on nanoengineering interfaces between the insulating and magnetic layers in such a way that the area of the hysteresis loops can be controlled in one or both magnetic layers. Our TMR coefficient ranges from 45% to 130%, depending on the MTJ layer materials, and can be anticipated to be further increased. We also report the study of the TMR dependence on the RA product, as an important interface parameter. Lastly, we present an analysis of MTJ parameters affected by our approach and a perspective on further improvements, focusing on the device design parameters relevant for the integration of this type of MTJs. This work is supported by the SRC-ATIC Grant 2012-VJ-2335. A part of this work is being performed at Cornell University CNF, a member of NNIN. We thank CNF staff for the support.

  10. Spin-Polarization in Quasi-Magnetic Tunnel Junctions

    Science.gov (United States)

    Xie, Zheng-Wei; Li, Ling

    2017-05-01

    Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

  11. Experimental investigation on parametric excitation of plasma oscillations in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Bak, Christen Kjeldahl; Kofoed, Bent; Pedersen, Niels Falsig;

    1975-01-01

    Experimental evidence for subharmonic, parametric excitation of plasma oscillations in Josephson tunnel junctions is presented. The experiments described are performed by measuring the microwave power necessary to switch a Josephson tunnel junction biased in the zero voltage state to a finite...

  12. Simultaneous quasiparticle and Josephson tunneling in BSCCO-2212 break junctions.

    Energy Technology Data Exchange (ETDEWEB)

    Ozyuzer, L.

    1998-10-27

    Tunneling measurements are reported for superconductor-insulator-superconductor (SIS) break junctions on underdoped, optimally-doped, and overdoped single crystals of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} (Bi-2212). The junction I-V characteristics exhibit well-defined quasiparticle current jumps at eV = 2A as well as hysteretic Josephson currents. The quasiparticle branch has been analyzed in the framework of d{sub x{sup 2}-y{sup 2}} (d-wave) superconductivity and indicates that there is preferential tunneling along the lobe directions of the d-wave gap. For overdoped Bi-2212 with T{sub c} = 62 K, the Josephson current is measured as a function of junction resistance, R{sub n}, which varied by two orders of magnitude (1 k{Omega} to 100 k{Omega}). I{sub c}R{sub n} product is proportional to the 0.47 power of I{sub c} and displays a maximum of 7.0 mV. When the hole doping is decreased from overdoped (T{sub c} = 62 K) to the underdoped regime (T{sub c} = 70 K), the average I{sub c}R{sub n} product increases as does the quasiparticle gap. The maximum I{sub c}R{sub n} is {approximately} 40% of the {Delta}/e at each doping level, with a value as high as 25 mV in underdoped Bi-2212.

  13. Giant thermal spin torque assisted magnetic tunnel junction switching

    Science.gov (United States)

    Pushp, Aakash

    Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal-spin-torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. Reference: A. Pushp*, T. Phung*, C. Rettner, B. P. Hughes, S.-H. Yang, S. S. P. Parkin, 112, 6585-6590 (2015).

  14. Giant thermal spin-torque–assisted magnetic tunnel junction switching

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P.; Yang, See-Hun; Parkin, Stuart S. P.

    2015-01-01

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. PMID:25971730

  15. Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes

    Energy Technology Data Exchange (ETDEWEB)

    Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Vangelista, S.; Kutrzeba-Kotowska, B.; Cocco, S.; Lamperti, A.; Tallarida, G. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Mameli, D. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Dipartimento di Scienze Chimiche, Universita di Cagliari, Cittadella Universitaria, 09042 Monserrato, Cagliari (Italy); Fanciulli, M. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, Universita degli studi Milano-Bicocca, Via R Cozzi 53, 20125 Milano (Italy)

    2012-05-01

    Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions.

  16. Edge-Geometry NbN/MgO/NbN Tunnel Junctions

    Science.gov (United States)

    Hunt, Brian D.; Leduc, Henry G.

    1991-01-01

    Superconductor/insulator/superconductor (SIS) tunnel junctions fabricated with base and counter electrodes of NbN separated by thin layers of MgO. Useful as submillimeter-wave mixers and fast switches. Use of edge geometry to define small junction makes possible to fabricate junction by process including conventional photolithography.

  17. Processing of Superconductor-Normal-Superconductor Josephson Edge Junctions

    Science.gov (United States)

    Kleinsasser, A. W.; Barner, J. B.

    1997-01-01

    The electrical behavior of epitaxial superconductor-normal-superconductor (SNS) Josephson edge junctions is strongly affected by processing conditions. Ex-situ processes, utilizing photoresist and polyimide/photoresist mask layers, are employed for ion milling edges for junctions with Yttrium-Barium-Copper-Oxide (YBCO) electrodes and primarily Co-doped YBCO interlayers.

  18. Superconducting tunnel junction detectors for soft x-ray astrophysics

    Science.gov (United States)

    Verhoeve, P.; Hijmering, R. A.; Martin, D. D. E.; Jerjen, I.; Peacock, A.; Venn, R.

    2006-06-01

    The requirement on energy resolution for detectors in future X-ray satelite missions such as XEUS (X-ray Evolving Universe Spectroscopy mission) is 80%. In addition, the requirements for field of view and angular resolution demand a detector array of typically 150x150 micron sized pixels in a 30x30 pixel format. DROIDs (Distributed Read Out Imaging Devices), consisting of a superconducting absorber strip with superconducting tunnel junctions (STJs) as read-out devices on either end, can fulfill these requirements. The amplitudes of the two signals from the STJs provide information on the absorption position and the energy of the incoming photon in the absorber. In this paper we present the development status of Ta/Al 1-D DROIDs, as well as the the short term development program that should result in a full size XEUS array.

  19. Magnetic Tunnel Junction as an On-Chip Temperature Sensor.

    Science.gov (United States)

    Sengupta, Abhronil; Liyanagedera, Chamika Mihiranga; Jung, Byunghoo; Roy, Kaushik

    2017-09-18

    Temperature sensors are becoming an increasingly important component in System-on-Chip (SoC) designs with increasing transistor scaling, power density and associated heating effects. This work explores a compact nanoelectronic temperature sensor based on a Magnetic Tunnel Junction (MTJ) structure. The MTJ switches probabilistically depending on the operating temperature in the presence of thermal noise. Performance evaluation of the proposed MTJ temperature sensor, based on experimentally measured device parameters, reveals that the sensor is able to achieve a conversion rate of 2.5K samples/s with energy consumption of 8.8 nJ per conversion (1-2 orders of magnitude lower than state-of-the-art CMOS sensors) for a linear sensing regime of 200-400 K.

  20. Supersymmetric phase transition in Josephson-tunnel-junction arrays

    Energy Technology Data Exchange (ETDEWEB)

    Foda, O.

    1988-08-31

    The fully frustrated XY model in two dimensions exhibits a vortex-unbinding as well as an Ising transition. If the Ising transition overlaps with the critical line that ends on the vortex transition: T/sub I/less than or equal toT/sub V/, then the model is equivalent, at the overlap temperature, to a free massless field theory of 1 boson and 1 Majorana fermion, which is a superconformal field theory, of central charge c=3/2. The model is experimentally realized in terms of an array of Josephson-tunnel junctions in a transverse magnetic field. The experiment reveals a phase transition consistent with T/sub I/=T/sub V/. Thus, at the critical temperature, the array provides a physical realization of a supersymmetric quantum field theory.

  1. Proximity Effect in BSCCO Intrinsic Josephson Junctions Contacted with a Normal Metal Layer

    Science.gov (United States)

    Suzuki, Minoru; Koizumi, Masayuki; Ohmaki, Masayuki; Kakeya, Itsuhiro; Shukrinov, Yu. M.

    Superconductivity proximity effect is numerically evaluated based on McMillan's tunneling proximity model for a sandwich of a normal metal layer on top of the surface superconducting layer of intrinsic Josephson junctions in a Bi2Sr2CaCu2O8+δ (BSCCO) crystal. Due to the very thin thickness of 0.3 nm of the superconducting layer in IJJs, the surface layer is subject to influence of the proximity effect when the top layer is contacted with a normal metal layer. The effect manifests itself as a significant change in the characteristics of the IJJ surface Josephson junction. It is found that when the superconducting layer thickness is smaller than 0.6 nm, the pair potential reduces significantly, leading to an almost complete suppression of the critical Josephson current density for the surface junction. This result can partly explain the experimental results on the IJJ characteristics of a mesa type structure.

  2. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    Science.gov (United States)

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-01

    Heulser alloys Fe2Cr1-xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  3. Superconducting tunnel junctions as direct detectors for submillimeter astronomy

    Science.gov (United States)

    Teufel, John Daniel

    This thesis presents measurements on the of performance of superconducting tunnel junctions (STJ) as direct detectors for submillimeter radiation. Over the past several decades, STJ's have been successfully implemented as energy-resolving detectors of X-ray and optical photons. This work extends their application to ultra-sensitive direct detection of photons near 100 GHz. The focus of this research is to integrate the detector with a readout that is sensitive, fast, and able to be scaled for use in large format arrays. We demonstrate the performance of a radio frequency single electron transistor (RF-SET) configured as a transimpedance current amplifier as one such readout. Unlike traditional semiconductor amplifiers, the RF-SET is compatible with cryogenic operation and naturally lends itself to frequency domain multiplexing. This research progressed to the invention of RF-STJ, whereby the same RF reflectometry as used in the RF-SET is applied directly to the detector junction. This results in a greatly simplified design that preserves many of the advantages of the RF-SET while achieving comparable sensitivity. These experiments culminate in calibration of the detector with an on-chip, mesoscopic noise source. Millimeter wave Johnson noise from a gold microbridge illuminates the detector in situ. This allows for direct measurement of the "optical" properties of the detector and its RF readout, including the response time, responsivity and sensitivity.

  4. Chaos and related nonlinear noise phenomena in Josephson tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Miracky, R.F.

    1984-07-01

    The nonlinear dynamics of Josephson tunnel junctions shunted by a resistance with substantial self-inductance have been thoroughly investigated. The current-voltage characteristics of these devices exhibit stable regions of negative differential resistance. Very large increases in the low-frequency voltage noise with equivalent noise temperatures of 10/sup 6/ K or more, observed in the vicinity of these regions, arise from switching, or hopping, between subharmonic modes. Moderate increases in the noise, with temperatures of about 10/sup 3/ K, arise from chaotic behavior. Analog and digital simulations indicate that under somewhat rarer circumstances the same junction system can sustain a purely deterministic hopping between two unstable subharmonic modes, accompanied by excess low-frequency noise. Unlike the noise-induced case, this chaotic process occurs over a much narrower range in bias current and is destroyed by the addition of thermal noise. The differential equation describing the junction system can be reduced to a one-dimensional mapping in the vicinity of one of the unstable modes. A general analytical calculation of switching processes for a class of mappings yields the frequency dependence of the noise spectrum in terms of the parameters of the mapping. Finally, the concepts of noise-induced hopping near bifurcation thresholds are applied to the problem of the three-photon Josephson parametric amplifier. Analog simulations indicate that the noise rise observed in experimental devices arises from occasional hopping between a mode at the pump frequency ..omega../sub p/ and a mode at the half harmonic ..omega../sub p//2. The hopping is induced by thermal noise associated with the shunt resistance. 71 references.

  5. Four logic states of tunneling magnetoelectroresistance in ferromagnetic shape memory alloy based multiferroic tunnel junctions

    Science.gov (United States)

    Singh, Kirandeep; Kaur, Davinder

    2017-07-01

    This study illustrates the approach to obtain four logic states of ferromagnetic shape memory alloy based multiferroic tunnel junction (MFTJ). In order to achieve giant tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), Ni-Mn-In and Ni-Mn-Sb layers were chosen as electrodes, as well as the concept of the composite barrier was adopted using the STO/PZT [SrTiO3, Strontium Titanate/PbZr0.52Ti0.48O3 (Lead Zirconate Titanate)] (dielectric/ferroelectric) barrier layer. Equated to MFTJ with a single PZT barrier, the introduction of a STO paraelectric (dielectric) barrier is shown to be effective in improving both the TER and TMR of the MFTJs. Particularly, the TER ratio is greatly enhanced by 168% {" separators="|relative TER change: (ΔT/E R T E R =T/ER 2-TE R 1 TE R 1 ×100 }). This is described in terms of the increased asymmetry in the electrostatic modulation on the barrier potential profile with respect to the Ferroelectric (FE) polarization direction. We show that due to the coupling between FE polarization and magnetization at the junction between the barrier and the electrode of a MFTJ, the spin polarization of the tunneling electrons can be reversibly and remanently flipped by switching the FE polarization of the barrier. In addition to the analysis of memory function, the exchange bias phenomena are also studied. A negative exchange bias field of "HEB" ˜-98 Oe occurred at 300 K in these bilayers.

  6. Nonequilibrium and proximity effects in superconductor-normal metal junctions

    Science.gov (United States)

    Kauppila, V. J.; Nguyen, H. Q.; Heikkilä, T. T.

    2013-08-01

    We study the consequences of nonequilibrium heating and inverse proximity effect in normal metal-insulator-superconductor-insulator-normal metal (NISIN) junctions with a simple quasi-one-dimensional model. We especially focus on observables and parameter regions that are of interest in the design of SINIS coolers with quasiparticle traps. We present numerical results calculated by solving the Usadel equation and also present analytical approximations in two limiting cases: a short junction with a non-negligible resistance in both ends and a long junction with a transparent contact at one end.

  7. Electrical switching in Fe /Cr/MgO/Fe magnetic tunnel junctions

    Science.gov (United States)

    Halley, D.; Majjad, H.; Bowen, M.; Najjari, N.; Henry, Y.; Ulhaq-Bouillet, C.; Weber, W.; Bertoni, G.; Verbeeck, J.; Van Tendeloo, G.

    2008-05-01

    Hysteretic resistance switching is observed in epitaxial Fe /Cr/MgO/Fe magnetic tunnel junctions under bias voltage cycling between negative and positive values of about 1V. The junctions switch back and forth between high- and low-resistance states, both of which depend on the device bias history. A linear dependence is found between the magnitude of the tunnel magnetoresistance and the crafted resistance of the junctions. To explain these results, a model is proposed that considers electron transport both by elastic tunneling and by defect-assisted transmission.

  8. Effect of Barrier Width on Bias-Dependent Tunnelling in Ferromagnetic Junctions

    Institute of Scientific and Technical Information of China (English)

    LI Fei-Fei; XIAO Ming-Wen; LI Zheng-Zhong; HU An; XU Wang

    2004-01-01

    @@ We present a finite temperature theory for bias-dependent tunnelling in ferromagnetic tunnelling junctions. The effects of the barrier width d on the tunnelling magnetoresistance (TMR) and its sign change behaviour are discussed with this theory. Numerical results show that both the zero-bias TMR and the critical voltage Vc at which the TMR changes its sign decrease with the increasing barrier width for a considerably thick barrier junction. Furthermore, it is found that a minimum exists in the curve of Vc versus d if a composite junction is under oxidized.

  9. Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

    Science.gov (United States)

    Rashid, H.; Desmaris, V.; Pavolotsky, A.; Belitsky, V.

    2016-04-01

    In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

  10. Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

    Directory of Open Access Journals (Sweden)

    H. Rashid

    2016-04-01

    Full Text Available In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

  11. Tunneling conductance in quantum wire/insulator/d_(x~2-y~2)+id_(xy) mixed wave superconductor junctions

    Institute of Scientific and Technical Information of China (English)

    Wei Jian-Wen

    2009-01-01

    Using the extended Blonder-Tinkham-Klapwijk(BTK)theory, this paper calculates the tunnelling conductance in quantum wire/insulator/d_(x~2-y~2)+id_(xy) mixed wave superconductor(q/I/d_(x~2-y~2)+id_(xy))junctions That is different from the case in d-and p-wave superconductor junctions. When the angle α between a-axis of the d_(x~2-y~2) wave superconductor and the interface normal is π/4, there follows a rather distinctive tunnelling conductance. The zero-bias conductance peak(ZBCP)may or may not appear in the tunnelling conductance. Both the interface potential z and the quasi-particle lifetime factor [F]are smaller, there is no ZBCP. Otherwise, the ZBCP will appear. The position otbias conductance peak(BCP)depends strongly on the amplitude ratio of two components for d_(x~2-y~2)+id_(xy) mixed wave. The low and narrow ZBCP may coexist with the BCP in the tunnelling conductance. Using those features in the tunnelling conductance of q/I/d_(x~2-y~2)+id_(xy) junctions, it can distinguish d_(x~2-y~2)+id_(xy) mixed wave superconductor from d-and p-wave one.

  12. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur

    2011-10-22

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

  13. Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction.

    Science.gov (United States)

    Boehnke, Alexander; Walter, Marvin; Roschewsky, Niklas; Eggebrecht, Tim; Drewello, Volker; Rott, Karsten; Münzenberg, Markus; Thomas, Andy; Reiss, Günter

    2013-06-01

    Recently, several groups have reported spin-dependent thermoelectric effects in magnetic tunnel junctions. In this paper, we present a setup for time-resolved measurements of thermovoltages and thermocurrents of a single micro- to nanometer-scaled tunnel junction. An electrically modulated diode laser is used to create a temperature gradient across the tunnel junction layer stack. This laser modulation technique enables the recording of time-dependent thermovoltage signals with a temporal resolution only limited by the preamplifier for the thermovoltage. So far, time-dependent thermovoltage could not be interpreted. Now, with the setup presented in this paper, it is possible to distinguish different Seebeck voltage contributions to the overall measured voltage signal in the μs time regime. A model circuit is developed that explains those voltage contributions on different sample types. Further, it will be shown that a voltage signal arising from the magnetic tunnel junction can only be observed when the laser spot is directly centered on top of the magnetic tunnel junction, which allows a lateral separation of the effects.

  14. Coexistance of Giant Tunneling Electroresistance and Magnetoresistance in an All-Oxide Composite Magnetic Tunnel Junction

    KAUST Repository

    Caffrey, Nuala Mai

    2012-11-30

    We propose, by performing advanced abinitio electron transport calculations, an all-oxide composite magnetic tunnel junction, within which both large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist. The TMR originates from the symmetry-driven spin filtering provided by an insulating BaTiO3 barrier to the electrons injected from the SrRuO3 electrodes. Following recent theoretical suggestions, the TER effect is achieved by intercalating a thin insulating layer, here SrTiO3, at one of the SrRuO3/BaTiO3 interfaces. As the complex band structure of SrTiO3 has the same symmetry as that of BaTiO3, the inclusion of such an intercalated layer does not negatively alter the TMR and in fact increases it. Crucially, the magnitude of the TER also scales with the thickness of the SrTiO3 layer. The SrTiO3 thickness becomes then a single control parameter for both the TMR and the TER effect. This protocol offers a practical way to the fabrication of four-state memory cells. © 2012 American Physical Society.

  15. Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions

    Science.gov (United States)

    Zhou, Jiaqi; Zhao, Weisheng; Wang, Yin; Peng, Shouzhong; Qiao, Junfeng; Su, Li; Zeng, Lang; Lei, Na; Liu, Lei; Zhang, Youguang; Bournel, Arnaud

    2016-12-01

    It has been reported in experiments that capping layers, which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs), induce a great impact on the tunnel magnetoresistance (TMR). To explore the essential influence caused by the capping layers, we carry out ab initio calculations on TMR in the X(001)|CoFe(001)|MgO(001)|CoFe(001)|X(001) MTJ, where X represents the capping layer material, which can be tungsten, tantalum, or hafnium. We report TMR in different MTJs and demonstrate that tungsten is an ideal candidate for a giant TMR ratio. The transmission spectrum in Brillouin zone is presented. It can be seen that in the parallel condition of MTJ, sharp transmission peaks appear in the minority-spin channel. This phenomenon is attributed to the resonant tunnel transmission effect, and we explained it by the layer-resolved density of states. In order to explore transport properties in MTJs, the density of scattering states was studied from the point of band symmetry. It has been found that CoFe|tungsten interface blocks scattering states transmission in the anti-parallel condition. This work reports TMR and transport properties in MTJs with different capping layers and proves that tungsten is a proper capping layer material, which would benefit the design and optimization of MTJs.

  16. Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory

    Science.gov (United States)

    Dill, Joshua Luchay

    This thesis details two experimental methods for quantifying magnetic tunnel junction behavior, namely write error rates and field modulated spin-torque ferromagnetic resonance. The former examines how reliably an applied spin-transfer torque can excite magnetization dynamics that lead to a reversal of magnetization direction while the latter studies steady state dynamics provided by an oscillating spin-transfer torque. These characterization techniques reveal write error rate behavior for a particular composition magnetic tunnel junction that qualitatively deviates from theoretical predictions. Possible origins of this phenomenon are also investigated with the field modulated spin-torque ferromagnetic resonance technique. By understanding the dynamics of magnetic moments predicted by theory, one can experimentally confirm or disprove these theories in order to accurately model and predict tunnel junction behavior. By having a better model for what factors are important in magnetization dynamics, one can optimize these factors in terms of improving magnetic tunnel junctions for their use as computer memory.

  17. Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

    Science.gov (United States)

    Dartora, C. A.; Nobrega, K. Z.; Cabrera, G. G.

    2016-08-01

    Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

  18. Switching current density reduction in perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    You, Chun-Yeol [Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)

    2014-01-28

    We investigate the switching current density reduction of perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions using micromagnetic simulations. We find that the switching current density can be reduced with elongated lateral shapes of the magnetic tunnel junctions, and additional reduction can be achieved by using a noncollinear polarizer layer. The reduction is closely related to the details of spin configurations during switching processes with the additional in-plane anisotropy.

  19. AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell

    Institute of Scientific and Technical Information of China (English)

    Lü Siyu; Qu Xiaosheng

    2011-01-01

    The Ⅲ-Ⅴ compound tandem solar cell is a third-generation new style solar cell with ultra-high efficiency.The energy band gaps of the sub-cells in a GaInP/GaAs/InGaAs/Ge 4-J tandem solar cell are 1.8,1.4,1.0and 0.7 eV,respectively.In order to match the currents between sub-cells,tunnel junctions are used to connect the sub-cells.The characteristics of the tunnel junction,the material used in the tunnel junction,the compensation of the tunnel junction to the overall cell's characteristics,the tunnel junction's influence on the current density of sub-cells and the efficiency increase are discussed in the paper.An A1GaAs/GaAs tunnel junction is selected to simulate the cell's overall characteristics by PC 1 D,current densities of 16.02,17.12,17.75 and 17.45 mA/cm2 are observed,with a Voc of 3.246 V,the energy conversion efficiency under AM0 is 33.9%.

  20. Second order anisotropy contribution in perpendicular magnetic tunnel junctions.

    Science.gov (United States)

    Timopheev, A A; Sousa, R; Chshiev, M; Nguyen, H T; Dieny, B

    2016-06-01

    Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of the form -K2cos(4)θ must be added to the conventional uniaxial -K1cos(2)θ term to explain the experimental data. This higher order contribution exists both in the free and reference layers. At T = 300 K, the estimated -K2/K1 ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures changing the ground state of the reference layer from "easy-axis" to "easy-cone" regime. The easy-cone regime has clear signatures in the shape of the hard-axis magnetoresistance loops. The existence of this higher order anisotropy was also confirmed by ferromagnetic resonance experiments on FeCoB/MgO sheet films. It is of interfacial nature and is believed to be due to spatial fluctuations at the nanoscale of the first order anisotropy parameter at the FeCoB/MgO interface.

  1. Switching Properties of sub-100 nm Perpendicular Magnetic Tunnel Junctions

    Science.gov (United States)

    Tryputen, Larysa; Piotrowski, Stephan; Bapna, Mukund; Chien, Chia-Ling; Wang, Weigang; Majetich, Sara; Ross, Caroline

    2015-03-01

    Perpendicular magnetic tunnel junctions (p-MTJs) have great potential for realizing high-density non-volatile memory and logic devices. It is critical to solve scalability problem to implement such devices, to achieve low resistance area and to reduce switching current density while maintaining thermal stability. We present our recent results on fabrication of high resolution Ta/CoFeB/MgO/CoFeB/Ta p-MTJ devices and characterization of their switching properties as well as topography and current mapping by using nanoscale Conductive Atomic Force Microscopy. Our patterning method is based on using hydrogen silsesquioxane resist mask combined with ion beam etching. It allows to fabricate p-MTJ devices down to 40 nm in diameter while maintaining the magnetic quality of the multilayers. Repeatable, consistent switching behaviour has been observed in the obtained p-MTJ devices of 500 nm down to 40 nm with 10 - 800 mV voltage applied. Switching field increased as device diameter decreased, from 580 Oe at 500 nm (MR = 10%) to 410 Oe at 80 nm (MR = 9%). We discuss the effect of device sizes on the switching properties. This work was supported in part by C-SPIN, one of the six centers of STARnet, a Semiconductor Research Corporation Program sponsored by MARCO and DARPA and in part through the National Science Foundation through NCN-Needs Program, Contract 12207020-EEC.

  2. Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

    Directory of Open Access Journals (Sweden)

    Mengxing Wang

    2015-08-01

    Full Text Available Magnetic tunnel junction (MTJ, which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.

  3. Measured Temperature Dependence of the cos-phi Conductance in Josephson Tunnel Junctions

    DEFF Research Database (Denmark)

    Sørensen, O. H.; Mygind, Jesper; Pedersen, Niels Falsig

    1977-01-01

    The temperature dependence of the cosϕ conductance in Sn-O-Sn Josephson tunnel junctions has been measured just below the critical temperature, Tc. From the resonant microwave response at the junction plasma frequency as the temperature is decreased from Tc it is deduced that the amplitude...

  4. Thermal Spin Transfer in Fe-MgO-Fe Tunnel Junctions

    NARCIS (Netherlands)

    Jia, X.; Xia, K.; Bauer, G.E.W.

    2011-01-01

    We compute thermal spin transfer (TST) torques in Fe-MgO-Fe tunnel junctions using a first principles wave-function-matching method. At room temperature, the TST in a junction with 3 MgO monolayers amounts to 10-7  J/m2/K, which is estimated to cause magnetization reversal for temperature difference

  5. Noncovalent Self-Assembled Monolayers on Graphene as a Highly Stable Platform for Molecular Tunnel Junctions.

    Science.gov (United States)

    Song, Peng; Sangeeth, C S Suchand; Thompson, Damien; Du, Wei; Loh, Kian Ping; Nijhuis, Christian A

    2016-01-27

    Monolayer graphene is used as the bottom electrode to fabricate stable and high-quality self-assembled monolayer (SAM)-based tunnel junctions. The SAMs are formed on graphene via noncovalent bonds without altering the structure of the graphene. This work paves the way to new types of molecular electronic junctions based on 2D materials.

  6. Static properties of small Josephson tunnel junctions in an oblique magnetic field

    DEFF Research Database (Denmark)

    Monaco, Roberto; Aarøe, Morten; Mygind, Jesper;

    2009-01-01

    We have carried out a detailed experimental investigation of the static properties of planar Josephson tunnel junctions in presence of a uniform external magnetic field applied in an arbitrary orientation with respect to the barrier plane. We considered annular junctions, as well as rectangular j...

  7. Bottom-Up Molecular Tunneling Junctions Formed by Self-Assembly

    NARCIS (Netherlands)

    Zhang, Yanxi; Zhao, Zhiyuan; Fracasso, Davide; Chiechi, Ryan C

    2014-01-01

    This Minireview focuses on bottom-up molecular tunneling junctions - a fundamental component of molecular electronics - that are formed by self-assembly. These junctions are part of devices that, in part, fabricate themselves, and therefore, are particularly dependent on the chemistry of the molecul

  8. Temperature dependence of the cosphi conductance in Josephson tunnel junctions determined from plasma resonance experiments

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Sørensen, O. H.; Mygind, Jesper

    1978-01-01

    The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature Tc of the Sn films. The temperature dependence of the cosφ conductance is determined from the resonant response at the junction plasma frequency fp...... of the experiment....

  9. Comparison of the magneto-Peltier and magneto-Seebeck effects in magnetic tunnel junctions

    NARCIS (Netherlands)

    Shan, J.; Dejene, F. K.; Leutenantsmeyer, J. C.; Flipse, J.; Munzenberg, M.; van Wees, B. J.

    2015-01-01

    Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck effect in MTJs, where the Seebeck coefficient of the junction v

  10. Magnetic tunnel junctions with non-collinear anisotropy axes for sensor applications

    CERN Document Server

    Grigorenko, A N

    2003-01-01

    Magnetic tunnel junctions (MTJ) with non-collinear anisotropy axes of magnetic layers have been fabricated for reading head and sensor applications. It is shown that crossed anisotropies of magnetic layers improve sensor sensitivity and time-response compared to the conventional case of aligned anisotropies. The developed micromagnetic model is in good agreement with magnetoresistive properties of fabricated junctions.

  11. Fabrication of tunnel junctions on thick X-ray absorbing substrates of Nb and Ta

    NARCIS (Netherlands)

    Hamster, A.W.; Ferrari, E.; Adelerhof, D.J.; Brons, G.C.S.; Schoofs, I.J.E.; Flokstra, J.; Rogalla, H.; Bruijn, M.P.; Kiewiet, F.; Luiten, O.J.; Korte, de P.A.J.

    1996-01-01

    X-ray detectors based on absorber-junction combinations can combine a large detector area with position resolution and good energy resolution. We plan to use a thick, single crystal Nb or Ta absorber with readout tunnel junctions integrated on top as our next generation X-ray detector. The thickness

  12. Effect of Anti-Diffusion Oxide Layer on Enhanced Thermal Stability of Magnetic Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    ZHANG Zong-Zhi; ZHAO Hui; Cardoso S.; Freitas P. P.

    2006-01-01

    @@ Magnetic tunnel junctions (MTJs) with one proper oxidized FeOx layer placed between the Al oxide barrier and the top CoFe pinned layer show large tunnelling-magnetoresistance (TMR) signals as high as 39% after anneal at 380℃ .

  13. Electrical properties of graphene tunnel junctions with high-κ metal-oxide barriers

    Science.gov (United States)

    Feng, Ying; Trainer, Daniel J.; Chen, Ke

    2017-04-01

    An insulating barrier is one of the key components in electronic devices that makes use of quantum tunneling principles. Many metal-oxides have been used as a good barrier material in a tunnel junction for their large band gap, stable chemical properties and superb properties for forming a thin and pin-hole-free insulating layer. The reduced dimensions of transistors have led to the need for alternative, high dielectric constant (high-κ) oxides to replace conventional silicon-based dielectrics to reduce the leaking current induced by electron tunneling. On the other hand, a tunnel junction with one or both electrodes made of graphene may lead to novel applications due to the massless Dirac fermions from the graphene. Here we have fabricated sandwich-type graphene tunnel junctions with high-κ metal-oxides as barriers, including Al2O3, HfO2, ZrO2, and TiO2. Tunneling properties are investigated by observing the temperature and time dependences of the tunneling spectra. Our results show the potential for applications of high-κ oxides in graphene tunnel junctions and bringing new opportunities for memory and logic electronic devices.

  14. Effect of the electromagnetic environment on current fluctuations in driven tunnel junctions

    Science.gov (United States)

    Frey, Moritz; Grabert, Hermann

    2016-07-01

    We examine current fluctuations in tunnel junctions driven by a superposition of a constant and a sinusoidal voltage source. In standard setups, the external voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. The modes of this environment are excited by the time-dependent voltage and are the source of Johnson-Nyquist noise. We determine the autocorrelation function of the current flowing in the leads of the junction in the weak tunneling limit up to terms of second order in the tunneling Hamiltonian. The driven modes of the electromagnetic environment are treated exactly by means of a unitary transformation introduced recently. Particular emphasis is placed on the spectral function of the current fluctuations. The spectrum is found to comprise three contributions: a term arising from the Johnson-Nyquist noise of the environmental impedance, a part due to the shot noise of the tunneling element, and a third contribution which comes from the cross correlation between fluctuations caused by the electromagnetic environment and fluctuations of the tunneling current. All three parts of the spectral function occur already for devices under dc bias. The spectral function of ac driven tunneling elements can be determined from the result for a dc bias by means of a photoassisted tunneling relation of the Tien-Gordon type. Specific results are given for an Ohmic environment and for a junction driven through a resonator.

  15. Renormalization-group calculations of ground-state and transport properties of ultrasmall tunnel junctions

    DEFF Research Database (Denmark)

    Frota, H.O.; Flensberg, Karsten

    1992-01-01

    We have done a numerical renormalization-group calculation for a Hamiltonian modeling charging effect in ultrasmall tunnel junctions. We find that the conductance is enhanced by the quantum charge fluctuations allowing tunneling below the charging energy gap. However, in all cases the conductance...

  16. Detecting Current Noise with a Josephson Junction in the Macroscopic Quantum Tunneling Regime

    OpenAIRE

    Peltonen, J. T.; Timofeev, A. V.; Meschke, M.; Pekola, J.P.

    2006-01-01

    We discuss the use of a hysteretic Josephson junction to detect current fluctuations with frequencies below the plasma frequency of the junction. These adiabatic fluctuations are probed by switching measurements observing the noise-affected average rate of macroscopic quantum tunneling of the detector junction out of its zero-voltage state. In a proposed experimental scheme, frequencies of the noise are limited by an on-chip filtering circuit. The third cumulant of current fluctuations at the...

  17. Magnetoresistance in Co/AlO sub x /Co tunnel junction arrays

    CERN Document Server

    Urech, M; Haviland, D B

    2002-01-01

    Lateral arrays of Co/AlO sub x /Co junctions with dimensions down to 60 nm and inter-junction separations approx 60-100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe approx 10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.

  18. Current distribution effects in patterned non-linear magnetoresistive tunnel junctions

    CERN Document Server

    Montaigne, F; Schuhl, A

    2000-01-01

    To be used in submicronic devices like magnetic memories, magnetic tunnel junctions require low resistances. Four-probe measurements of such resistances are often altered by non-uniformity of the current distribution in the junction. The measured resistance is decreased by localised preferential conduction and increased by voltage drop in the measure electrode. Competition between these two effects is investigated as a function of the geometry. The non-linear conduction of tunnel junctions amplifies dramatically these phenomena and can modify by more than 50% the measured resistance.

  19. Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

    Science.gov (United States)

    Pepe, G. P.; Ruotolo, A.; Parlato, L.; Peluso, G.; Ausanio, G.; Carapella, G.; Latempa, R.

    2004-05-01

    We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2K are also presented and discussed.

  20. Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

    Energy Technology Data Exchange (ETDEWEB)

    Pepe, G.P. E-mail: ruotolo_antonio@tin.it; Ruotolo, A.; Parlato, L.; Peluso, G.; Ausanio, G.; Carapella, G.; Latempa, R

    2004-05-01

    We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2 K are also presented and discussed.

  1. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu-Pu, E-mail: Vicky-sg1015@hotmail.com [Department of Electrical and Computer Engineering, National University of Singapore (Singapore); Data Storage Institute, Agency for Science, Technology and Research - A*STAR (Singapore); Lim, Sze-Ter; Han, Gu-Chang, E-mail: HAN-Guchang@dsi.a-star.edu.sg [Data Storage Institute, Agency for Science, Technology and Research - A*STAR (Singapore); Teo, Kie-Leong, E-mail: eleteokl@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore (Singapore)

    2015-12-21

    Heulser alloys Fe{sub 2}Cr{sub 1−x}Co{sub x}Si (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 10{sup 6 }erg/cm{sup 3}. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe{sub 2}CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  2. Inter-band phase fluctuations in macroscopic quantum tunneling of multi-gap superconducting Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Asai, Hidehiro, E-mail: hd-asai@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ota, Yukihiro [CCSE, Japan Atomic Energy Agency, Kashiwa, Chiba 277-8587 (Japan); Kawabata, Shiro [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Nori, Franco [CEMS, RIKEN, Wako-shi, Saitama 351-0198 (Japan); Physics Department, University of Michigan, Ann Arbor, MI 48109-1040 (United States)

    2014-09-15

    Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate.

  3. Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

    Science.gov (United States)

    Althammer, Matthias; Vikam Singh, Amit; Keshavarz, Sahar; Kenan Yurtisigi, Mehmet; Mishra, Rohan; Borisevich, Albina Y.; LeClair, Patrick; Gupta, Arunava

    2016-12-01

    We experimentally investigate the structural, magnetic, and electrical transport properties of La0.67 Sr0.33 MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350 % at T =5 K . Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T >200 K . Our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future.

  4. Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

    Directory of Open Access Journals (Sweden)

    B. Fang

    2015-06-01

    Full Text Available We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.

  5. The importance of Fe surface states for spintronic devices based on magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Chantis, Athanasios N [Los Alamos National Laboratory

    2008-01-01

    In this article we give a review of our recent theoretical studies of the influence of Fe(001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs(001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

  6. Temperature dependence of spin-dependent tunneling conductance of magnetic tunnel junctions with half-metallic C o2MnSi electrodes

    Science.gov (United States)

    Hu, Bing; Moges, Kidist; Honda, Yusuke; Liu, Hong-xi; Uemura, Tetsuya; Yamamoto, Masafumi; Inoue, Jun-ichiro; Shirai, Masafumi

    2016-09-01

    In order to elucidate the origin of the temperature (T ) dependence of spin-dependent tunneling conductance (G ) of magnetic tunnel junctions (MTJs), we experimentally investigated the T dependence of G for the parallel and antiparallel magnetization alignments, GP and GAP, of high-quality C o2MnSi (CMS)/MgO/CMS MTJs having systematically varied spin polarizations (P ) at 4.2 K by varying the Mn composition α in C o2M nαSi electrodes that exhibited giant tunneling magnetoresistance ratios. Results showed that GP normalized by its value at 4.2 K exhibited a notable, nonmonotonic T dependence although its variation with T was significantly smaller than that of GAP normalized by its value at 4.2 K, indicating that an analysis of the experimental GP(T ) is critical to revealing the origin of the T dependence of G . By analyzing the experimental GP(T ) , we clarified that both spin-flip inelastic tunneling via a thermally excited magnon and spin-conserving elastic tunneling in which P decays with increasing T play key roles. The experimental GAP(T ) , including its stronger T dependence for higher P at 4.2 K, was also consistently explained with this model. Our findings provide a unified picture for understanding the origin of the T dependence of G of MTJs with a wide range of P , including MTJs with high P close to a half-metallic value.

  7. Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

    Science.gov (United States)

    Leduc, H. G.; Judas, A.; Cypher, S. R.; Bumble, B.; Hunt, B. D.

    1991-01-01

    The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

  8. Four-state non-volatile memory in a multiferroic spin filter tunnel junction

    Science.gov (United States)

    Ruan, Jieji; Li, Chen; Yuan, Zhoushen; Wang, Peng; Li, Aidong; Wu, Di

    2016-12-01

    We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3.

  9. Junction size dependence of ferroelectric properties in e-beam patterned BaTiO{sub 3} ferroelectric tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Singh, A. V.; Gupta, A. [Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, Alabama 35487 (United States); Althammer, M. [Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, Alabama 35487 (United States); Walther-Meissner-Institut, Bayerische Akdademie der Wissenschaften, Garching 85748 (Germany); Rott, K.; Reiss, G. [Thin Films and Physics of Nanostructures, Department of Physics and Center for Spinelectronic Materials and Devices, Bielefeld University, Bielefeld 33615 (Germany)

    2015-09-21

    We investigate the switching characteristics in BaTiO{sub 3}-based ferroelectric tunnel junctions patterned in a capacitive geometry with circular Ru top electrode with diameters ranging from ∼430 to 2300 nm. Two different patterning schemes, viz., lift-off and ion-milling, have been employed to examine the variations in the ferroelectric polarization, switching, and tunnel electro-resistance resulting from differences in the pattering processes. The values of polarization switching field are measured and compared for junctions of different diameter in the samples fabricated using both patterning schemes. We do not find any specific dependence of polarization switching bias on the size of junctions in both sample stacks. The junctions in the ion-milled sample show up to three orders of resistance change by polarization switching and the polarization retention is found to improve with increasing junction diameter. However, similar switching is absent in the lift-off sample, highlighting the effect of patterning scheme on the polarization retention.

  10. Tunneling conductance studies in the ion-beam sputtered CoFe/Mg/MgO/NiFe magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Braj Bhusan; Chaudhary, Sujeet [Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)

    2013-06-03

    Magnetic tunnel junctions consisting of CoFe(10 nm)/Mg(1 nm)/MgO(3.5 nm)/NiFe(10 nm) are grown at room temperature using dual ion beam sputtering via in-situ shadow masking. The effective barrier thickness and average barrier height are estimated to be 3.5 nm (2.9 nm) and 0.69 eV (1.09 eV) at 290 K (70 K), respectively. The tunnel magnetoresistance value of 0.2 % and 2.3 % was observed at 290 K and 60 K, respectively. The temperature dependence of tunneling conductance revealed the presence of localized states present within the forbidden gap of the MgO barrier leading to finite inelastic spin independent tunneling contributions, which degrade the TMR value.

  11. MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height

    Science.gov (United States)

    Sukegawa, Hiroaki; Kato, Yushi; Belmoubarik, Mohamed; Cheng, P.-H.; Daibou, Tadaomi; Shimomura, Naoharu; Kamiguchi, Yuuzo; Ito, Junichi; Yoda, Hiroaki; Ohkubo, Tadakatsu; Mitani, Seiji; Hono, Kazuhiro

    2017-03-01

    Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. A tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the height of the MgGa2O4 barrier is much lower than that of an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product.

  12. Visualizing supercurrents in 0-{pi} ferromagnetic Josephson tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Goldobin, Edward; Guerlich, Christian; Gaber, Tobias; Koelle, Dieter; Kleiner, Reinhold [Physikalisches Institut and Center for Collective Quantum Phenomena, Universitaet Tuebingen (Germany); Weides, Martin; Kohlstedt, Hermann [Institute of Solid State Physics, Reserch Center Juelich (Germany)

    2009-07-01

    So-called 0 and {pi} Josephson junctions can be treated as having positive and negative critical currents. This implies that the same phase shift applied to a Josephson junction causes counterflow of supercurrents in 0 and in {pi} junctions connected in parallel provided they are short in comparison with Josephson penetration depth {lambda}{sub J}. We have fabricated several 0, {pi}, 0-{pi}, 0-{pi}-0 and 20 x (0-{pi}-) planar superconductor-insulator-ferromagnet-superconductor Josephson junctions and studied the spatial supercurrent density distribution j{sub s}(x,y) across the junction area using low temperature scanning electron microscopy. At zero magnetic field we clearly see counterflow of the supercurrents in 0 and {pi} regions. The picture also changes consistently in the applied magnetic field.

  13. Demonstration of the Potential of Magnetic Tunnel Junctions for a Universal RAM Technology

    Science.gov (United States)

    Gallagher, William J.

    2000-03-01

    Over the past four years, tunnel junctions with magnetic electrodes have emerged as promising devices for future magnetoresistive sensing and for information storage. This talk will review advances in these devices, focusing particularly on the use of magnetic tunnel junctions for magnetic random access memory (MRAM). Exchange-biased versions of magnetic tunnel junctions (MTJs) in particular will be shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. Exchange-biased MTJ elements have been made with areas as small as 0.1 square microns and have shown magnetoresistance values exceeding 40 The potential of exchange-biased MTJs for MRAM has been most seriously explored in a demonstration experiment involving the integration of 0.25 micron CMOS technology with a special magnetic tunnel junction "back end." The magnetic back end is based upon multi-layer magnetic tunnel junction growth technology which was developed using research-scale equipment and one-inch size substrates. For the demonstration, the CMOS wafers processed through two metal layers were cut into one-inch squares for depositions of bottom-pinned exchange-biased magnetic tunnel junctions. The samples were then processed through four additional lithographic levels to complete the circuits. The demonstration focused attention on a number of processing and device issues that were addressed successfully enough that key performance aspects of MTJ MRAM were demonstrated in 1 K bit arrays, including reads and writes in less than 10 ns and nonvolatility. While other key issues remain to be addressed, these results suggest that MTJ MRAM might simultaneously provide much of the functionality now provided separately by SRAM, DRAM, and NVRAM.

  14. Direct detection of the parametrically generated half-harmonic voltage in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1976-01-01

    The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions a l...... a large-amplitude microwave signal is emitted at fp provided the input power exceeds a threshold value. The results are compared to existing theory. Applied Physics Letters is copyrighted by The American Institute of Physics.......The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions...

  15. Response of an on-chip coil-integrated superconducting tunnel junction to x-rays

    CERN Document Server

    Maehata, K; Taino, T

    2003-01-01

    An on-chip coil-integrated superconducting tunnel junction (OC sup 2 -STJ) was irradiated by X-rays emitted from an sup 5 sup 5 Fe source to the examine the performance of X-ray detection by applying a magnetic field produced by a superconducting microstrip coil integrated into the junction chip. Response characteristics were obtained for a diamond-shaped Nd-based tunnel junction with a sensitive area of 100 x 100 mu m sup 2 in the OC sup 2 -STJ chip. Two kinds of stable operation modes with different pulse heights were observed by changing the magnetic flux density in the barrier region of the junction. In the low-pulse-height mode, the pulse height distribution exhibits two full-energy peaks corresponding to signals created in the top and base electrodes. Stable operation of the OC sup 2 -STJ was demonstrated without using conventional external electromagnets. (author)

  16. L10-MnGa based magnetic tunnel junction for high magnetic field sensor

    Science.gov (United States)

    Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wang, H. L.; Wang, X. L.; Wei, D. H.; Zhao, J. H.

    2017-07-01

    We report on the investigation of the magnetic tunnel junction structure designed for high magnetic field sensors with a perpendicularly magnetized L10-MnGa reference layer and an in-plane magnetized Fe sensing layer. A large linear tunneling magnetoresistance ratio up to 27.4% and huge dynamic range up to 5600 Oe have been observed at 300 K, with a low nonlinearity of 0.23% in the optimized magnetic tunnel junction (MTJ). The field response of tunneling magnetoresistance is discussed to explain the field sensing properties in the dynamic range. These results indicate that L10-MnGa based orthogonal MTJ is a promising candidate for a high performance magnetic field sensor with a large dynamic range, high endurance and low power consumption.

  17. Giant piezoelectric resistance effect of nanoscale zinc oxide tunnel junctions: first principles simulations.

    Science.gov (United States)

    Zhang, Genghong; Luo, Xin; Zheng, Yue; Wang, Biao

    2012-05-21

    Based on first principles simulations and quantum transport calculations, we have investigated in the present work the effect of the mechanical load on transport characteristics and the relative physical properties of nanoscale zinc oxide (ZnO) tunnel junctions, and verified an intrinsic giant piezoelectric resistance (GPR) effect. Our results show that the transport-relevant properties, e.g., the piezoelectric potential (piezopotential), built-in electric field, conduction band offset and electron transmission probability of the junction etc., can obviously be tuned by the applied strain. Accordingly, it is inspiring to find that the current-voltage characteristics and tunneling electro-resistance of the ZnO tunnel junction can significantly be adjusted with the strain. When the applied strain switches from -5% to 5%, an increase of more than 14 times in the tunneling current at a bias voltage of 1.1 V can be obtained. Meanwhile, an increase of up to 2000% of the electro-resistance ratio with respect to the zero strain state can be reached at the same bias voltage and with a 5% compression. According to our investigations, the giant piezoelectric resistance effect of nanoscale ZnO tunnel junctions exhibits great potential in exploiting tunable electronic devices. Furthermore, the methodology of strain engineering revealed in this work may shed light on the mechanical manipulations of electronic devices.

  18. Hybrid tunnel junction contacts to III-nitride light-emitting diodes

    Science.gov (United States)

    Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

    2016-02-01

    In this work, we demonstrate highly doped GaN p-n tunnel junction (TJ) contacts on III-nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10-4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a (20\\bar{2}\\bar{1}) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

  19. Hybrid tunnel junction contacts to III–nitride light-emitting diodes

    KAUST Repository

    Young, Erin C.

    2016-01-26

    In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

  20. Evidence for two-band superconductivity from break-junction tunneling on MgB2.

    Science.gov (United States)

    Schmidt, H; Zasadzinski, J F; Gray, K E; Hinks, D G

    2002-03-25

    Superconductor-insulator-superconductor tunnel junctions have been fabricated on MgB2 that display Josephson and quasiparticle currents. These junctions exhibit a gap magnitude, Delta approximately 2.5 meV, that is considerably smaller than the BCS value, but which clearly and reproducibly closes near the bulk T(c). In conjunction with fits of the conductance spectra, these results are interpreted as direct evidence of two-band superconductivity.

  1. Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin-orbit coupling

    Institute of Scientific and Technical Information of China (English)

    Li Yun

    2011-01-01

    We present theoretical calculations of spin transport in spin filtering magnetic tunnelling junctions based on the Landauer-Büttiker formalism and taking into account the spin-orbit coupling (SOC). It is shown that spin-flip scattering induced by SOC is stronger in parallel alignment of magnetization of the ferromegnet barrier (FB) and the ferromagnetic electrode than that in antiparallel case. The increase of negative tunnelling magnetoresistance with bias is in agreement with recent experimental observation.

  2. Quantum-limited detection of millimeter waves using superconducting tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Mears, C.A.

    1991-09-01

    The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit by studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 {plus_minus} 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker`s theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs.

  3. Quantum-limited detection of millimeter waves using superconducting tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Mears, C.A.

    1991-09-01

    The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit by studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 {plus minus} 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker's theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs.

  4. Enhancement of thermal spin transfer torque by double-barrier magnetic tunnel junctions with a nonmagnetic metal spacer

    Science.gov (United States)

    Chen, C. H.; Tseng, P.; Yang, Y. Y.; Hsueh, W. J.

    2017-01-01

    Enhancement of thermal spin transfer torque in a double-barrier magnetic tunnel junction with a nonmagnetic-metal spacer is proposed in this study. The results indicate that, given the same temperature difference, thermal spin transfer torque and charge current density for the proposed double barrier magnetic tunnel junction configuration can be approximately twice as much as that of the traditional single-barrier magnetic tunnel junctions. This enhancement can be attributed to the resonant tunneling mechanism in the double-barrier structure.

  5. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R. [Institut Interdisciplinaire d' Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  6. Reinventing the PN Junction: Dimensionality Effects on Tunneling Switches

    Science.gov (United States)

    2012-05-11

    lower paraboloid represents all of the available states in k-space on the left side of the junction and the upper paraboloid represents the available...and so the paraboloids must overlap. However, as seen in the right part of the figure, they can only overlap at a single energy. Furthermore, the... paraboloids on each side of the junction only intersect at a single energy. 62 need to sum Eqn. (6.8.3) over all initial states or final

  7. Magnetic tunneling junctions with permalloy electrodes: a study of barrier, thermal annealing, and interlayer coupling

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xiaoyong E-mail: xiaoyong_liu@brown.edu; Ren Cong; Ritchie, Lance; Schrag, B.D.; Xiao Gang; Li Laifeng

    2003-11-01

    Magnetic properties of Ni{sub 81}Fe{sub 19}/Al{sub 2}O{sub 3}/Ni{sub 81}Fe{sub 19} tunneling junctions are studied for different Al thicknesses and plasma oxidation times. A maximal magnetoresistance of 34% is obtained with Al thickness of 20 A. Magnetometry reveals large exchange bias fields ({approx}400 Oe) over a wide range of barrier thicknesses, indicating junctions of high quality. Transport measurements conducted on junctions before and after thermal annealing show a dramatic improvement in barrier quality after annealing. Interlayer coupling fields have been measured as a function of barrier thickness for different oxidation times.

  8. Realization of Primary Thermometer from Electrical Shot Noise in a Metal-Insulator-Metal Tunnel Junction

    Energy Technology Data Exchange (ETDEWEB)

    Park, J. H.; Rehman, M.; Choi, J. S.; Song, W.; Chong, Y. [Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of); Khim, Z. G. [Dept. of Physics and Astronomy, Seoul National University, Seoul (Korea, Republic of); Ryu, S. W. [Dept. of Physics, Chonnam National University, Gwangju (Korea, Republic of)

    2010-04-15

    We measured electrical shot noise in a metal-insulator-metal tunnel junction, which was made by using electron-beam lithography and double-angle evaporation technique. Since the dependence of the shot noise on bias voltage and temperature is theoretically well known, we can determine the temperature of the junction by measuring the noise as the voltage across the junction is changed. A cryogenic low noise amplifier was used to amplify the noise signal in the frequency range of 600-800 MHz, which enabled fast measurement of noise signal and thus temperature. With further study, this method could be useful for primary thermometry in cryogenic temperatures.

  9. Light emission and finite-frequency shot noise in molecular junctions: from tunneling to contact

    DEFF Research Database (Denmark)

    Lu, Jing Tao; Christensen, Rasmus Bjerregaard; Brandbyge, Mads

    2013-01-01

    Scanning tunneling microscope induced light emission from an atomic or molecular junction has been probed from the tunneling to contact regime in recent experiments. There, the measured light emission yields suggest a strong correlation with the high-frequency current/charge fluctuations. We show...... that this is consistent with the established theory in the tunneling regime, by writing the finite-frequency shot noise as a sum of inelastic transitions between different electronic states. Based on this, we develop a practical scheme to perform calculations on realistic structures using nonequilibrium Green's functions...

  10. Very High Current Density Nb/AlN/Nb Tunnel Junctions for Low-Noise Submillimeter Mixers

    Science.gov (United States)

    Kawamura, Jonathan; Miller, David; Chen, Jian; Zmuidzinas, Jonas; Bumble, Bruce; LeDuc, Henry G.; Stern, Jeff A.

    2000-01-01

    We have fabricated and tested submillimeter-wave superconductor-insulator-superconductor (SIS) mixers using very high current density Nb/AlN/Nb tunnel junctions (J(sub c) approximately equal 30 kA/sq cm) . The junctions have low resistance-area products (R(sub N)A approximately 5.6 Omega.sq micron), good subgap to normal resistance ratios R(sub sg)/R(sub N) approximately equal 10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that omega.R(sub N)C = 1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlO(x)/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected receiver noise temperature of T(sub RX) = 110 K (DSB) at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing RF loss in the tuning circuits.

  11. Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

    Science.gov (United States)

    Ning, Keyu; Liu, Houfang; Ju, Zhenyi; Fang, Chi; Wan, Caihua; Cheng, Jinglei; Liu, Xiao; Li, Linsen; Feng, Jiafeng; Wei, Hongxiang; Han, Xiufeng; Yang, Yi; Ren, Tian-Ling

    2017-01-01

    As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs) under various measurement temperatures. The large tunnel magneto-Seebeck (TMS) ratio up to -838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

  12. Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

    Directory of Open Access Journals (Sweden)

    Keyu Ning

    2017-01-01

    Full Text Available As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs under various measurement temperatures. The large tunnel magneto-Seebeck (TMS ratio up to −838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

  13. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.

    Science.gov (United States)

    Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

    2016-02-29

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 10(5). Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  14. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    KAUST Repository

    Jin Hu, Wei

    2016-02-29

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  15. Peltier effect in normal metal-insulator-heavy fermion metal junctions

    Science.gov (United States)

    Goltsev, A. V.; Rowe, D. M.; Kuznetsov, V. L.; Kuznetsova, L. A.; Min, Gao

    2003-04-01

    A theoretical study has been undertaken of the Peltier effect in normal metal-insulator-heavy fermion metal junctions. The results indicate that, at temperatures below the Kondo temperature, such junctions can be used as electronic microrefrigerators to cool the normal metal electrode and are several times more efficient in cooling than the normal metal-heavy fermion metal junctions.

  16. Magnetic Tunnel Junctions Incorporating a Near-Zero-Moment Ferromagnetic Semiconductor

    Science.gov (United States)

    Warring, H.; Trodahl, H. J.; Plank, N. O. V.; Natali, F.; Granville, S.; Ruck, B. J.

    2016-10-01

    We present a fully semiconductor-based magnetic tunnel junction that uses spin-orbit coupled materials made of intrinsic ferromagnetic semiconductors. Unlike more common approaches, one of the electrodes consists of a near-zero magnetic-moment ferromagnetic semiconductor, samarium nitride, with the other electrode composed of the more conventional ferromagnetic semiconductor gadolinium nitride. Fabricated tunnel junctions show a magnetoresistance as high as 200%, implying strong spin polarization in both electrodes. In contrast to conventional tunnel junctions, the resistance is largest at high fields, a direct result of the orbital-dominant magnetization in samarium nitride that requires that the spin in this electrode must align opposite to that in the gadolinium nitride when the magnetization is saturated. The magnetoresistance at intermediate fields is controlled by the formation of a twisted magnetization phase in the samarium nitride, a direct result of the orbital-dominant ferromagnetism. Thus, an alternative type of functionality can be brought to magnetic tunnel junctions by the use of different electrode materials, in contrast to the usual focus on tuning the barrier properties.

  17. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

    DEFF Research Database (Denmark)

    Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D

    2006-01-01

    We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance w...

  18. Thermoelectricity and disorder of FeCo/MgO/FeCo magnetic tunnel junctions

    NARCIS (Netherlands)

    Wang, S.Z.; Xia, K.; Bauer, G.E.W.

    2014-01-01

    We compute the thermoelectric transport parameterized by the Seebeck coefficient and thermal/electric conductance of random-alloy FeCo/MgO/FeCo(001) magnetic tunnel junctions (MTJs) from first principles using a generalized Landauer-Büttiker formalism. The thermopower is found to be typically smalle

  19. Zurek-Kibble domain structures: The dynamics of spontaneous vortex formation in annular Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, Jesper; Rivers, R.J.

    2002-01-01

    Phase transitions create a domain structure with defects, which has been argued by Zurek and Kibble (ZK) to depend in a characteristic way on the quench rate. We present an experiment to measure the ZK scaling exponent sigma. Using long symmetric Josephson tunnel junctions, for which the predicted...

  20. Macroscopic quantum tunneling in π Josephson junctions with insulating ferromagnets and its application to phase qubits

    NARCIS (Netherlands)

    Kawabata, Shiro; Golubov, Alexander A.

    2007-01-01

    We theoretically investigate macroscopic quantum tunneling (MQT) in a current-biased π junction with a superconductor (S) and an insulating ferromagnet (IF). By using the functional integral method and the instanton approximation, the influence of the quasiparticle dissipation on MQT is found to be

  1. On-chip measurement of the Brownian relaxation frequency of magnetic beads using magnetic tunneling junctions

    DEFF Research Database (Denmark)

    Donolato, M.; Sogne, E.; Dalslet, Bjarke Thomas

    2011-01-01

    We demonstrate the detection of the Brownian relaxation frequency of 250 nm diameter magnetic beads using a lab-on-chip platform based on current lines for exciting the beads with alternating magnetic fields and highly sensitive magnetic tunnel junction (MTJ) sensors with a superparamagnetic free...

  2. Feasibility of a Frequency-Multiplexed TES Read-Out Using Superconducting Tunnel Junctions

    NARCIS (Netherlands)

    de Lange, G.

    2014-01-01

    We describe a feasibility study of a frequency multiplexed read-out scheme for large number transition edge sensor arrays. The read-out makes use of frequency up- and down-conversion and RF-to-DC conversion with superconducting-isolator-superconducting tunnel junctions operating at GHz frequencies,

  3. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    Energy Technology Data Exchange (ETDEWEB)

    Ganesh Saripalli

    2002-12-31

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35{micro} CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  4. Static properties of small Josephson tunnel junctions in a transverse magnetic field

    DEFF Research Database (Denmark)

    Monaco, R.; Aarøe, Morten; Mygind, Jesper;

    2008-01-01

    The magnetic field distribution in the barrier of small planar Josephson tunnel junctions is numerically simulated in the case when an external magnetic field is applied perpendicular to the barrier plane. The simulations allow for heuristic analytical solutions for the Josephson static phase pro...

  5. Testing the kibble-zurek scenario with annular josephson tunnel junctions

    Science.gov (United States)

    Kavoussanaki; Monaco; Rivers

    2000-10-16

    In parallel with Kibble's description of the onset of phase transitions in the early Universe, Zurek has provided a simple picture for the onset of phase transitions in condensed matter systems, supported by agreement with experiments in 3He and superconductors. We show how experiments with annular Josephson tunnel junctions can, and do, provide further support for this scenario.

  6. Electron tunneling through alkanedithiol self-assembled monolayers in large-area molecular junctions

    NARCIS (Netherlands)

    Akkerman, Hylke B.; Naber, Ronald C. G.; Jongbloed, Bert; van Hal, Paul A.; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

    2007-01-01

    The electrical transport through self-assembled monolayers of alkanedithiols was studied in large-area molecular junctions and described by the Simmons model [Simmons JIG (1963) J Appi Phys 34:1793-1803 and 2581-2590] for tunneling through a practical barrier, i.e., a rectangular barrier with the im

  7. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    Energy Technology Data Exchange (ETDEWEB)

    Saripalli, Ganesh [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35μ CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  8. Experimental investigations of SiO{sub 2} based ferrite magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Ravi, S., E-mail: sravi@mepcoeng.ac.in [Department of Physics, Mepco Schlenk Engineering College, Sivakasi (India); Karthikeyan, A. [Department of Physics, Mepco Schlenk Engineering College, Sivakasi (India); Aravindan, V. [Energy Research Institute, Nanyang Technological University (Singapore); Pugazhvadivu, K.S.; Tamilarasan, K. [Department of Physics, Kongu Engineering College, Perundurai (India)

    2013-09-01

    Highlights: • CoFe{sub 2}O{sub 4}/SiO{sub 2}/Co–NiFe{sub 2}O{sub 4} magnetic junction was fabricated using RF/DC sputtering. • Spin transport through nanostructure silicon oxide with ferrite as free and pinned layer is our first report. • Magnetization studies were done to justify the free layer and pinned layer for our multilayer. • Magnetoresistance behavior shows a sharp discriminating between parallel and antiparallel alignment with TMR value of 16%. -- Abstract: We report experimental results of ferrite based magnetic tunnel junction. Ferrite junction and spin transport through SiO{sub 2} were interesting since they can readily replace the conventional electronics. We fabricated a cobalt ferrite/SiO{sub 2}/cobalt nickel ferrite based magnetic tunnel junction over a copper coated n-silicon substrate using a RF/DC magnetron sputtering. The tunneling magnetoresistance shows a very good response to applied field and we achieved a TMR of about 16%. Although theoretically it was predicted infinite TMR for half metallic ferromagnetic junction, the deviation was explained on the basis of incoherent scattering along the interfaces.

  9. Dynamical image-charge effect in molecular tunnel junctions

    DEFF Research Database (Denmark)

    Jin, Chengjun; Thygesen, Kristian Sommer

    2014-01-01

    When an electron tunnels between two metal contacts it temporarily induces an image charge (IC) in the electrodes which acts back on the tunneling electron. It is usually assumed that the IC forms instantaneously such that a static model for the image potential applies. Here we investigate how th...... that the dynamical corrections can reduce the conductance by more than a factor of two when compared to static GW or density functional theory where the molecular energy levels have been shifted to match the exact quasiparticle levels....

  10. Fabrication of high-quality submicron Nb/Al-AlOx/Nb tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Yu Hai-Feng; Cao Wen-Hui; Zhu Xiao-Bo; Yang Hai-Fang; Yu Hong-Wei; Ren Yu-Feng; Gu Chang-Zhi; Chen Geng-Hua; Zhao Shi-Ping

    2008-01-01

    Nb/Al-AlOx/Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and supercon-ducting qubit applications of the Josepheon devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al-AlOx/Nb Josephson junctions.The technique follows the well-known selective Nb etching process and produces high-quality junctions with Vm=100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm2, which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature depen-dence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.

  11. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  12. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

    Energy Technology Data Exchange (ETDEWEB)

    Dhungana, Kamal B.; Pati, Ranjit, E-mail: patir@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States)

    2014-04-21

    Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

  13. Quantum decrease of capacitance in a nanometer-sized tunnel junction

    Science.gov (United States)

    Untiedt, C.; Saenz, G.; Olivera, B.; Corso, M.; Sabater, C.; Pascual, J. I.

    2013-03-01

    We have studied the capacitance of the tunnel junction defined by the tip and sample of a Scanning Tunnelling Microscope through the measurement of the electrostatic forces and impedance of the junction. A decrease of the capacitance when a tunnel current is present has shown to be a more general phenomenon as previously reported in other systems. On another hand, an unexpected reduction of the capacitance is also observed when increasing the applied voltage above the work function energy of the electrodes to the Field Emission (FE) regime, and the decrease of capacitance due to a single FE-Resonance has been characterized. All these effects should be considered when doing measurements of the electronic characteristics of nanometer-sized electronic devices and have been neglected up to date. Spanish government (FIS2010-21883-C02-01, CONSOLIDER CSD2007-0010), Comunidad Valenciana (ACOMP/2012/127 and PROMETEO/2012/011)

  14. Spin-polarized transport in a normal/ferromagnetic/normal zigzag graphene nanoribbon junction

    Institute of Scientific and Technical Information of China (English)

    Tian Hong-Yu; Wang Jun

    2012-01-01

    We investigate the spin-dependent electron transport in single and double normal/ferromagnetic/normal zigzag graphene nanoribbon (NG/FG/NG) junctions.The ferromagnetism in the FG region originates from the spontaneous magnetization of the zigzag graphene nanoribbon.It is shown that when the zigzag-chain number of the ribbon is even and only a single transverse mode is actived,the single NG/FG/NG junction can act as a spin polarizer and/or a spin analyzer because of the valley selection rule and the spin-exchange field in the FG,while the double NG/FG/NG/FG/NG junction exhibits a quantum switching effect,in which the on and the off states switch rapidly by varying the cross angle between two FG magnetizations.Our findings may shed light on the application of magnetized graphene nanoribbons to spintronics devices.

  15. Experimental Observation of Non-'S-Wave' Superconducting Behavior in Bulk Superconducting Tunneling Junctions of Yba2Cu3O7-δ

    Directory of Open Access Journals (Sweden)

    Leandro Jose Guerra

    1998-06-01

    Full Text Available Evidence of non-s-wave superconductivity from normal tunneling experiments in bulk tunneling junctions of YBa2Cu3O7-δ is presented. The I-V and dI/dV characteristics of bulk superconducting tunneling junctions of YBa2Cu3O7-δ have been measured at 77.0K and clear deviation from s-wave superconducting behavior has been observed. The result agrees with d-wave symmetry, and interpreting the data in this way, the magnitude of the superconducting energy gap, 2Δ, is found to be (0.038 ± 0.002 eV. Comparing this energy gap with Tc (2Δ/kB Tc = 5.735, indicates that these high-Tc superconductors are strongly correlated materials, which in contrast with BCS-superconductors are believed to be weakly correlated.

  16. Radio-frequency shot-noise measurement in a magnetic tunnel junction with a MgO barrier

    Energy Technology Data Exchange (ETDEWEB)

    Rehman, Mushtaq; Park, Junghwan; Song, Woon; Chong, Yonuk [Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of); Lee, Yeonsub; Min, Byoungchul; Shin, Kyungho [Korea Institute of Science and Technology, Seoul (Korea, Republic of); Ryu, Sangwan [Chonnam National University, Gwangju (Korea, Republic of); Khim, Zheong [Seoul National University, Seoul (Korea, Republic of)

    2010-10-15

    We measured the noise power of a magnetic tunnel junction in the frequency range of 710 {approx} 1200 MHz. A low-noise cryogenic HEMT amplifier was used to measure the small noise signal at a high frequency with wide bandwidth. The MgO-barrier tunnel junction showed large tunnel magnetoresistance ratio of 215% at low temperature, which indicates electronic transport through the tunnel barrier without any significant spin-flip scattering. In the bias-dependent noise measurement, however, the zero-bias shot noise was enhanced compared to the value expected from a perfect tunnel barrier or the value observed from a good Al-AlO{sub x}-Al tunnel junction. We assume that this enhanced noise comes from inelastic tunneling processes through the barrier, which may be related to the observed zero-bias anomaly in the differential resistance of the tunnel junctions. We present a simple phenomenological model for how the inelastic scattering process can enhance the zero-bias noise in a tunnel junction.

  17. InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes

    OpenAIRE

    Krishnamoorthy, Sriram; Akyol, Fatih; Rajan, Siddharth

    2014-01-01

    InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measur...

  18. Light amplification by stimulated emission from an optically pumped molecular junction in a scanning tunneling microscope

    CERN Document Server

    Braun, K; Wang, X; Adler, H; Peisert, H; Chasse, T; Zhang, D; Meixner, A J

    2013-01-01

    Here, we introduce and experimentally demonstrate optical amplification and stimulated emission from a single optically pumped molecular tunneling junction of a scanning tunneling microscope. The gap between a sharp gold tip and a flat gold substrate covered with a self-assembled monolayer of 5-chloro-2-mercaptobenzothiazole molecules forms an extremely small optical gain medium. When electrons tunnel from the molecules highest occupied molecular orbital to the tip, holes are left behind. These can be repopulated by hot electrons induced by the laser-driven plasmon oscillation on the metal surfaces enclosing the cavity. Solving the laser-rate equations for this system shows that the repopulation process can be efficiently stimulated by the gap modes near field, TERS scattering from neighboring molecules acting as an optical seed. Our results demonstrate how optical enhancement inside the plasmonic cavity can be further increased by a stronger localization via tunneling through molecules. We anticipate that st...

  19. Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

    KAUST Repository

    Manchon, Aurelien

    2011-10-01

    Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

  20. Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy.

    Science.gov (United States)

    Zhao, Weisheng; Zhao, Xiaoxuan; Zhang, Boyu; Cao, Kaihua; Wang, Lezhi; Kang, Wang; Shi, Qian; Wang, Mengxing; Zhang, Yu; Wang, You; Peng, Shouzhong; Klein, Jacques-Olivier; de Barros Naviner, Lirida Alves; Ravelosona, Dafine

    2016-01-12

    Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ) becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM) for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS) circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

  1. Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method

    Science.gov (United States)

    Kim, Kyungjun; Choi, Chulmin; Oh, Youngtaek; Sukegawa, Hiroaki; Mitani, Seiji; Song, Yunheub

    2017-04-01

    Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-heating effect for a MgO tunnel barrier with thicknesses of 1.1 and 1.2 nm by the constant voltage stress (CVS) method. Using the results of this experiment, we predicted a TDDB of 1.0 nm for the tunnel barrier. Also, we suggested the use of not only the CVS method, which is a common way of determining TDDB, but also the constant current stress (CCS) method, which compensates for the disadvantages of the CVS method.

  2. Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory

    Science.gov (United States)

    Sun, Jonathan Z.

    2016-10-01

    Spin-transfer torque (or spin-torque, or STT) based magnetic tunnel junction (MTJ) is at the heart of a new generation of magnetism-based solid-state memory, the so-called spin-transfer-torque magnetic random access memory, or STT-MRAM. Over the past decades, STT-based switchable magnetic tunnel junction has seen progress on many fronts, including the discovery of (001) MgO as the most favored tunnel barrier, which together with (bcc) Fe or FeCo alloy are yielding best demonstrated tunnel magneto-resistance (TMR); the development of perpendicularly magnetized ultrathin CoFeB-type of thin films sufficient to support high density memories with junction sizes demonstrated down to 11nm in diameter; and record-low spin-torque switching threshold current, giving best reported switching efficiency over 5 kBT/μA. Here we review the basic device properties focusing on the perpendicularly magnetized MTJs, both in terms of switching efficiency as measured by sub-threshold, quasi-static methods, and of switching speed at super-threshold, forced switching. We focus on device behaviors important for memory applications that are rooted in fundamental device physics, which highlights the trade-off of device parameters for best suitable system integration.

  3. Magnetic tunnel junction on a magnetostrictive substrate: An ultrasensitive magnetic-field sensor

    Science.gov (United States)

    Pertsev, N. A.

    2016-09-01

    The concept of a magnetic tunnel junction (MTJ) fabricated on an active substrate made of a highly magnetostrictive ferromagnetic material is described theoretically. It is shown that, under certain conditions, such hybrid device exhibits strongly enhanced sensitivity of the tunnel current to the external magnetic field. This feature results from the field-induced substrate deformations, which create lattice strains in the MTJ due to the interfacial mechanical interaction. If the free electrode of MTJ is made of a cubic ferromagnet like Co40Fe60 having strong magnetoelastic coupling between the magnetization and strains, the field-induced magnetization reorientation here may be enhanced by the strain effect drastically. This reorientation should lead to a change in the junction's electrical conductance because the magnetization of the reference electrode may be pinned by adjacent antiferromagnetic layer to keep its initial direction. Taking into account additional strain effects on the height and width of the tunnel barrier and the effective mass of tunneling electrons, we performed numerical calculations of the conductance magnetosensitivity for the CoFe/MgO/CoFeB junctions mechanically coupled to the FeGaB film grown on Si and found that such hybrid device is promising as an ultrasensitive room-temperature magnetic-field sensor.

  4. Backhopping effect in magnetic tunnel junctions: Comparison between theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Skowroński, Witold, E-mail: skowron@agh.edu.pl; Wrona, Jerzy; Stobiecki, Tomasz [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Krakow (Poland); Ogrodnik, Piotr, E-mail: piotrogr@if.pw.edu.pl [Faculty of Physics, Warsaw University of Technology, Ul. Koszykowa 75, 00-662 Warsaw (Poland); Institute of Molecular Physics, Polish Academy of Sciences, Ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Świrkowicz, Renata [Faculty of Physics, Warsaw University of Technology, Ul. Koszykowa 75, 00-662 Warsaw (Poland); Barnaś, Józef [Institute of Molecular Physics, Polish Academy of Sciences, Ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Reiss, Günter [Thin Films and Physics of Nanostructures, Bielefeld University, 33615 Bielefeld (Germany); Dijken, Sebastiaan van [NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, FI-00076 Aalto (Finland)

    2013-12-21

    We report on magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on current-induced switching in junctions with a MgO tunnel barrier reveal random back-and-forth switching between magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier thickness t{sub b} and is not observed in tunnel junctions with very thin MgO tunnel barriers, t{sub b} < 0.95 nm. The switching dependence on bias voltage and barrier thickness is explained in terms of the macrospin model, with the magnetization dynamics described by the modified Landau-Lifshitz-Gilbert equation. Numerical simulations indicate that the competition between in-plane and out-of-plane torque components can result in a non-deterministic switching behavior at high bias voltages, in agreement with experimental observations. When the barrier thickness is reduced, the overall coupling between the magnetic layers across the barrier becomes ferromagnetic, which suppresses the backhopping effect.

  5. Tunneling of quasiparticles in the normal-insulator-superconductor-insulator-normal geometry

    Science.gov (United States)

    Hidaka, Mutsuo; Ishizaka, Satoshi; Sone, Jun'ichi

    1993-12-01

    The probability of quasiparticle transmission going through a normal-insulator- superconductor-insulator-normal (NISIN) geometry is theoretically calculated using Bogoliubov-de Gennes equations to investigate the feasibility of electron devices utilizing this geometry. This new calculation is able to include a current carried by Cooper pairs by employing hole injections from the outlet which destroy Cooper pairs at the outlet super- conductor-insulator boundary. Resonant tunneling phenomena occur even if the electron kinetic energy is less than the superconducting energy gap and electron tunneling probabilities are greatly modified by the resonance. When the unevenness of the superconductor (S) width thickness is large compared with the electron wavelength in the S layer, the resonance is smeared out in averaged tunneling probabilities. Then the tunneling probabilities can be controlled by the electron kinetic energy. Applications of the NISIN geometry for superconducting transistors are also discussed.

  6. Elliptic annular Josephson tunnel junctions in an external magnetic field: the statics

    DEFF Research Database (Denmark)

    Monaco, Roberto; Granata, Carmine; Vettoliere, Antonio

    2015-01-01

    symmetric electrodes a transverse magnetic field is equivalent to an in-plane field applied in the direction of the current flow. Varying the ellipse eccentricity we reproduce all known results for linear and ring-shaped JTJs. Experimental data on high-quality Nb/Al-AlOx/Nb elliptic annular junctions...... or in the perpendicular direction. We report a detailed study of both short and long elliptic annular junctions having different eccentricities. For junctions having a normalized perimeter less than one the threshold curves are derived and computed even in the case with one trapped Josephson vortex. For longer junctions...

  7. Direct optical determination of interfacial transport barriers in molecular tunnel junctions.

    Science.gov (United States)

    Fereiro, Jerry A; McCreery, Richard L; Bergren, Adam Johan

    2013-07-03

    Molecular electronics seeks to build circuitry using organic components with at least one dimension in the nanoscale domain. Progress in the field has been inhibited by the difficulty in determining the energy levels of molecules after being perturbed by interactions with the conducting contacts. We measured the photocurrent spectra for large-area aliphatic and aromatic molecular tunnel junctions with partially transparent copper top contacts. Where no molecular absorption takes place, the photocurrent is dominated by internal photoemission, which exhibits energy thresholds corresponding to interfacial transport barriers, enabling their direct measurement in a functioning junction.

  8. Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application

    Science.gov (United States)

    Yakushiji, Kay; Takagi, Hideki; Watanabe, Naoya; Fukushima, Akio; Kikuchi, Katsuya; Kurashima, Yuuichi; Sugihara, Atsushi; Kubota, Hitoshi; Yuasa, Shinji

    2017-06-01

    Three-dimensional integration processes (based on direct wafer bonding and back-surface silicon removal) for magnetic tunnel junctions with perpendicular magnetization (p-MTJs) were developed. Perfect wafer bonding, namely, bonding without interfacial voids, and damageless silicon removal were successfully demonstrated by using very flat tantalum cap layers. Moreover, p-MTJ nanopillars subjected to these processes exhibited no degradation in magnetoresistance or spin-transfer-torque (STT) switching. Magnetoresistive random access memory (MRAM) technology incorporating these processes (direct wafer bonding and back-surface silicon removal) will make it possible to integrate epitaxial MTJs (with a single-crystal tunnel barrier) and ferromagnetic electrode layers (based on new materials).

  9. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

    DEFF Research Database (Denmark)

    Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D

    2006-01-01

    We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance...... with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference....

  10. TUNNEL MAGNETORESISTANCE IN THE FERROMAGNETIC TUNNEL JUNCTION WITH FERROMAGNETIC LAYERS OF FINITE THICKNESS SUBJECTED TO AN ELECTRIC FIELD

    Institute of Scientific and Technical Information of China (English)

    1998-01-01

    Based on the two-band model, we investigate the tunnel magnetoresistance(TMR) in ferromagnet/insulator(semiconductor)/ferromagnet(FM/I(S)/FM) tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field. Our results show that TMR oscillates with the thickness of ferromagnetic layers owing to the quantum-size effect and can reach very large value under suitable conditions, which may in general not be reached in FM/I(S)/FM with infinitely thick ferromagnetic layer. Although the electric field causes the change of the oscillation period, phase and amplitude of the TMR, a large TMR is still obtained in some situations with the electric field. Furthermore, the electric field does not change the feature that TMR varies monotonously with the change of magnetization angle of the middle ferromagnetic layer.

  11. Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

    Science.gov (United States)

    Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

    2016-03-01

    Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

  12. Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions

    Science.gov (United States)

    Louarn, K.; Claveau, Y.; Hapiuk, D.; Fontaine, C.; Arnoult, A.; Taliercio, T.; Licitra, C.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

    2017-09-01

    The aim of this study is to investigate the impact of multiband corrections on the current density in GaAs tunnel junctions (TJs) calculated with a refined yet simple semi-classical interband tunneling model (SCITM). The non-parabolicity of the considered bands and the spin–orbit effects are considered by using a recently revisited SCITM available in the literature. The model is confronted to experimental results from a series of molecular beam epitaxy grown GaAs TJs and to numerical results obtained with a full quantum model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We emphasize the importance of considering the non-parabolicity of the conduction band by two different measurements of the energy-dependent electron effective mass in N-doped GaAs. We also propose an innovative method to compute the non-uniform electric field in the TJ for the SCITM simulations, which is of prime importance for a successful operation of the model. We demonstrate that, when considering the multiband corrections and this new computation of the non-uniform electric field, the SCITM succeeds in predicting the electrical characteristics of GaAs TJs, and are also in agreement with the quantum model. Besides the fundamental study of the tunneling phenomenon in TJs, the main benefit of this SCITM is that it can be easily embedded into drift-diffusion software, which are the most widely-used simulation tools for electronic and opto-electronic devices such as multi-junction solar cells, tunnel field-effect transistors, or vertical-cavity surface-emitting lasers.

  13. Spin transport in nanoscale spin valves and magnetic tunnel junctions

    Science.gov (United States)

    Patibandla, Sridhar

    Spintronics or electronics that utilizes the spin degree of freedom of a single charge carrier (or an ensemble of charge carriers) to store, process, sense or communicate data and information is a rapidly burgeoning field in electronics. In spintronic devices, information is encoded in the spin polarization of a single carrier (or multiple carriers) and the spin(s) of these carrier(s) are manipulated for device operation. This strategy could lead to devices with low power consumption. This dissertation investigates spin transport in one dimensional and two dimensional semiconductors, with a view to applications in spintronic devices. This dissertation is arranged as follows: Chapter 1 gives a detailed introduction and necessary background to understand aspects of spin injection into a semiconductor from a spin polarized source such as a ferromagnet, and spin polarized electron transport in the semiconductor. Chapter 2 discusses the nanoporous alumina technique that is employed to fabricate nanowires and nanowire spin valves for the investigation of spin transport in 1D semiconductors. Chapter 3 investigates the spin transport in quasi one-dimensional spin valves with germanium spacer layer. These spin valves with 50nm in diameter and 1 mum length were fabricated using the porous alumina technique. Spin transport in nanoscale germanium spin valves was demonstrated and the spin relaxation lengths and the spin relaxation times were calculated. Chapter 4 discusses spin transport studies conducted in bulk high purity germanium with a view to comparing spin relaxation mechanisms in low mobility nanowires and high mobility bulk structures. Lateral spin valve with tunnel injectors were employed in this study and the spin transport measurements were conducted at various temperatures. The spin relaxation rates were measured as a function of temperature which allowed us to distinguish between two different mechanisms---D'yakonov-Perel' and Elliott-Yafet---that dominate spin

  14. Electric Field Control of the Resistance of Multiferroic Tunnel Junctions with Magnetoelectric Antiferromagnetic Barriers

    Science.gov (United States)

    Merodio, P.; Kalitsov, A.; Chshiev, M.; Velev, J.

    2016-06-01

    Based on model calculations, we predict a magnetoelectric tunneling electroresistance effect in multiferroic tunnel junctions consisting of ferromagnetic electrodes and magnetoelectric antiferromagnetic barriers. Switching of the antiferromagnetic order parameter in the barrier in applied electric field by means of the magnetoelectric coupling leads to a substantial change of the resistance of the junction. The effect is explained in terms of the switching of the orientations of local magnetizations at the barrier interfaces affecting the spin-dependent interface transmission probabilities. Magnetoelectric multiferroic materials with finite ferroelectric polarization exhibit an enhanced resistive change due to polarization-induced spin-dependent screening. These results suggest that devices with active barriers based on single-phase magnetoelectric antiferromagnets represent an alternative nonvolatile memory concept.

  15. Important issues facing model-based approaches to tunneling transport in molecular junctions

    CERN Document Server

    Baldea, Ioan

    2015-01-01

    Extensive studies on thin films indicated a generic cubic current-voltage $I-V$ dependence as a salient feature of charge transport by tunneling. A quick glance at $I-V$ data for molecular junctions suggests a qualitatively similar behavior. This would render model-based studies almost irrelevant, since, whatever the model, its parameters can always be adjusted to fit symmetric (asymmetric) $I-V$ curves characterized by two (three) expansion coefficients. Here, we systematically examine popular models based on tunneling barrier or tight-binding pictures and demonstrate that, for a quantitative description at biases of interest ($V$ slightly higher than the transition voltage $V_t$), cubic expansions do not suffice. A detailed collection of analytical formulae as well as their conditions of applicability are presented to facilitate experimentalists colleagues to process and interpret their experimental data by obtained by measuring currents in molecular junctions. We discuss in detail the limits of applicabili...

  16. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    Energy Technology Data Exchange (ETDEWEB)

    Manipatruni, Sasikanth, E-mail: sasikanth.manipatruni@intel.com; Nikonov, Dmitri E.; Young, Ian A. [Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, Oregon 97124 (United States)

    2014-05-07

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects.

  17. Paramagnetic molecule induced strong antiferromagnetic exchange coupling on a magnetic tunnel junction based molecular spintronics device.

    Science.gov (United States)

    Tyagi, Pawan; Baker, Collin; D'Angelo, Christopher

    2015-07-31

    This paper reports our Monte Carlo (MC) studies aiming to explain the experimentally observed paramagnetic molecule induced antiferromagnetic coupling between ferromagnetic (FM) electrodes. Recently developed magnetic tunnel junction based molecular spintronics devices (MTJMSDs) were prepared by chemically bonding the paramagnetic molecules between the FM electrodes along the tunnel junction's perimeter. These MTJMSDs exhibited molecule-induced strong antiferromagnetic coupling. We simulated the 3D atomic model analogous to the MTJMSD and studied the effect of molecule's magnetic couplings with the two FM electrodes. Simulations show that when a molecule established ferromagnetic coupling with one electrode and antiferromagnetic coupling with the other electrode, then theoretical results effectively explained the experimental findings. Our studies suggest that in order to align MTJMSDs' electrodes antiparallel to each other, the exchange coupling strength between a molecule and FM electrodes should be ∼50% of the interatomic exchange coupling for the FM electrodes.

  18. Magnetoresistance in antiferromagnet-based spin tunnel junctions

    Science.gov (United States)

    Jungwirth, Tomas

    2012-02-01

    To date spintronics research and applications of magnetically ordered systems have focused on ferromagnets (FMs). There are, however, fundamental physical limitations for FM materials which may make them impractical to realize the full potential of spintronics. Metal FMs offer high temperature operation but the large magnetic stray fields make them unfavorable for high-density integration and metals are unsuitable for transistor and information processing applications. FM semiconductors on the other hand do not allow for high-temperature operation. We present a concept in which these limitations are circumvented in spintronics based on antiferromagnets. The concept is based on relativistic magnetic and magneto-transport anisotropy effects in nanodevices whose common characteristics is that they are an even function of the microscopic magnetic moment vector, i.e., can be equally strong in AFMs as in FMs. As a demonstration we present our experimental observation of >100% tunneling anisotropic magnetoresistance in a device with an IrMn AFM tunnel electrode [1]. We will also discuss candidate materials for high-temperature AFM semiconductor spintronics [2].[4pt] [1] B. G. Park, J.Wunderlich, X.Marti, V.Holy, Y.Kurosaki, M.Yamada, H.Yamamoto, A.Nishide, J.Hayakawa, H.Takahashi, A.B.Shick, T.Jungwirth, Nature Mat. 10, 347 (2011). [0pt] [2] T.Jungwirth, V.Nov'ak, X.Marti, M.Cukr, F.M'aca, A.B. Shick, J.Masek, P.Horodysk'a, P.Nemec, V.Hol'y, et al., Phys. Rev. B 83, 035321 (2011).

  19. Millisecond dynamics of thermal expansion of mechanically controllable break junction electrodes studied in the tunneling regime

    Science.gov (United States)

    Kolesnychenko, O. Yu.; Toonen, A. J.; Shklyarevskii, O. I.; van Kempen, H.

    2001-10-01

    The thermal expansion dynamics of W, Pt-Ir, and Au mechanically controllable break junction electrodes was studied in the millisecond range. By measuring a transient tunnel current as a function of time, we found that, at low temperatures, the electrode elongation Δs˜t1/2 due to the large values of thermal diffusivity of metals. The magnitude of Δs varies in direct proportion to the power P dissipated in the electrodes.

  20. X-band singly degenerate parametric amplification in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1978-01-01

    Preliminary measurements on a (quasi-) degenerate parametric amplifier using a single Josephson tunnel junction as the active element is reported. The pump frequency is at 18 GHz and the signal and idler frequencies are both at about 9 GHz. A power gain of 16 dB in a 4-MHz 3-dB bandwidth is achie...... is achieved at the top of the cryostat. Applied Physics Letters is copyrighted by The American Institute of Physics....

  1. LETTER TO THE EDITOR: A CrO2-based magnetic tunnel junction

    Science.gov (United States)

    Barry, A.; Coey, J. M. D.; Viret, M.

    2000-02-01

    A tunnel junction based on the half-metallic oxide CrO2 uses a native oxide barrier layer and a cobalt top electrode. The I :V characteristic is fitted to the Simmons model with icons/Journals/Common/phi" ALT="phi" ALIGN="TOP"/> = 0.76 eV and t = 2.0 nm. The magnetoresistance is positive with icons/Journals/Common/Delta" ALT="Delta" ALIGN="TOP"/> R /R = 1.0% at 77 K.

  2. Controllable spin and valley polarized current through a superlattice of normal/ferromagnetic/normal silicene junction

    Science.gov (United States)

    Rashidian, Z.; Hajati, Y.; Rezaeipour, S.; Baher, S.

    2017-02-01

    The spin and valley transports in a superlattice of normal/ferromagnetic/normal silicene junction are studied theoretically. Transport properties in particular valley-resolved conductance, spin and valley polarization have been computed by the Landauer Buttiker formula. We achieve fully valley and spin polarized current in the superlattice N/F/N structure. Our findings also imply that by increasing the number of ferromagnetic barriers, the onset of fully spin and valley polarized current always occur for lower values of staggered potential(Δz/E) and length of the ferromagnetic region (Kf L) in the silicene supelattice structure as compared with N/F/N silicene junction. Fully spin and valley polarizations make silicene superlattice a suitable candidate for spin-valleytronics applications.

  3. Spin-wave thermal population as temperature probe in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T. [Institut d' Electronique Fondamentale, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Nikitin, V. [SAMSUNG Electronics Corporation, 601 McCarthy Blvd Milpitas, California 95035 (United States)

    2016-07-14

    We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.

  4. Engineering double-well potentials with variable-width annular Josephson tunnel junctions

    Science.gov (United States)

    Monaco, Roberto

    2016-11-01

    Long Josephson tunnel junctions are non-linear transmission lines that allow propagation of current vortices (fluxons) and electromagnetic waves and are used in various applications within superconductive electronics. Recently, the Josephson vortex has been proposed as a new superconducting qubit. We describe a simple method to create a double-well potential for an individual fluxon trapped in a long elliptic annular Josephson tunnel junction characterized by an intrinsic non-uniform width. The distance between the potential wells and the height of the inter-well potential barrier are controlled by the strength of an in-plane magnetic field. The manipulation of the vortex states can be achieved by applying a proper current ramp across the junction. The read-out of the state is accomplished by measuring the vortex depinning current in a small magnetic field. An accurate one-dimensional sine-Gordon model for this strongly non-linear system is presented, from which we calculate the position-dependent fluxon rest-mass, its Hamiltonian density and the corresponding trajectories in the phase space. We examine the dependence of the potential properties on the annulus eccentricity and its electrical parameters and address the requirements for observing quantum-mechanical effects, as discrete energy levels and tunneling, in this two-state system.

  5. Terahertz time domain interferometry of a SIS tunnel junction and a quantum point contact

    Energy Technology Data Exchange (ETDEWEB)

    Karadi, Chandu [Univ. of California, Berkeley, CA (United States). Dept. of Physics

    1995-09-01

    The author has applied the Terahertz Time Domain Interferometric (THz-TDI) technique to probe the ultrafast dynamic response of a Superconducting-Insulating-Superconducting (SIS) tunnel junction and a Quantum Point Contact (QPC). The THz-TDI technique involves monitoring changes in the dc current induced by interfering two picosecond electrical pulses on the junction as a function of time delay between them. Measurements of the response of the Nb/AlOxNb SIS tunnel junction from 75--200 GHz are in full agreement with the linear theory for photon-assisted tunneling. Likewise, measurements of the induced current in a QPC as a function of source-drain voltage, gate voltage, frequency, and magnetic field also show strong evidence for photon-assisted transport. These experiments together demonstrate the general applicability of the THz-TDI technique to the characterization of the dynamic response of any micron or nanometer scale device that exhibits a non-linear I-V characteristic.

  6. An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction

    Science.gov (United States)

    Sahoo, G. S.; Nayak, P. P.; Mishra, G. P.

    2016-07-01

    Multi junction solar cell has not achieved an optimum performance yet. To acquire more conversion efficiency research on multi junction solar cell are in progress. In this work we have proposed a dual junction solar cell with conversion efficiency of 43.603%. Mainly the focus is given on the tunnel diode, window layer and back surface field (BSF) layer of the cell, as all of them plays important role on the cell performance. Here we have designed a hetero InGaP/GaAs tunnel diode which makes tunnel diode more transparent to the bottom cell as well as reduces the recombination at the interfaces. The thickness of the window and BSF layer are optimized to achieve higher conversion efficiency. The simulation is carried out using Silvaco ATLAS TCAD under 1000 sun of AM1.5G spectrum. Different performance parameters of the cell like short circuit current density (Jsc), open circuit voltage (Voc), external quantum efficiency (EQE), fill factor (FF), conversion efficiency (η), spectral response and photogeneration rate of the cell are examined and compared with previously reported literatures. For the proposed model a Voc of 2.7043 V, Jsc of 1898.52 mA/cm2, FF of 88.88% and η of 43.6% are obtained.

  7. Tunneling conductance study of a metal-superconductor junction in the presence of Rashba spin orbit coupling

    Science.gov (United States)

    Kapri, Priyadarshini; Basu, Saurabh

    2017-02-01

    The tunneling conductance for a junction device consisting of a normal metal and a singlet superconductor is studied with Rashba spin orbit coupling (RSOC) being present in the metallic lead and the interface separating the two regions via an extended Blonder-Tinkham-Klapwijk (BTK) formalism. Interesting interplay between the RSOC and a number of parameters that have experimental significance, and characterize either the junction or the superconducting leads, such as the barrier transparency, quasiparticle lifetime, Fermi wavevector mismatch, an in-plane magnetic field and their effects on the tunneling conductance are investigated in details for both a s-wave and a d-wave superconductor. In an opaque barrier, in presence of a quasiparticle lifetime, a Fermi wavevector mismatch or an external in-plane magnetic field, RSOC enhances the conductance corresponding to low biasing energies, that is, at energies lesser than the superconducting gap, while the reverse is noted for energies exceeding the magnitude of the gap. Further, there are exciting anomalies noted in the conductance spectrum for the d-wave gap which can be understood by incorporating the interplay between the superconducting gap and the angle of incident of the charge carriers.

  8. Development of superconducting tunnel junction as photon counting detector in astronomy; Developpement de jonctions supraconductrices a effet tunnel pour le comptage de photons en astronomie

    Energy Technology Data Exchange (ETDEWEB)

    Jorel, C

    2004-12-15

    This work describes the development of S/Al-AlOx-Al/S Superconducting Tunnel Junctions (STJ) to count photons for astronomical applications in the near-infrared. The incoming light energy is converted into excited charges in a superconducting layer (S, either Nb or Ta) with a population proportional to the deposited energy. The photon energy can thus be evaluated by integrating the tunnel current induced in a voltage biased junction at a very low temperature (100 mK). The performance of STJ for light detection is discussed in the first chapter and compared with the best performances obtained with other techniques based on either superconductors. At the beginning of the thesis, a previous manufacturing process made it possible to obtain good quality Nb based junctions and preliminary results for photon counting. The objective of the thesis was to replace Nb as absorber with Ta, an intrinsically more sensitive material, and secondly to develop a new and more efficient manufacturing process. We first focused on the optimization of the Tantalum thin film quality. Structural analysis showed that these films can be grown epitaxially by magnetron sputtering onto an R-plane sapphire substrate heated to 600 Celsius degrees and covered by a thin Nb buffer layer. Electrical transport measurement from room to low temperatures gave excellent Relative Resistive Ratios of about 50 corresponding to mean free path of the order of 100 nm. Then, we conceived an original manufacturing process batch on 3 inch diameter sapphire substrate with five mask levels. These masks made it possible to produce single pixel STJ of different sizes (from 25*25 to 50*50 square microns) and shapes. We also produced multiple junctions onto a common absorber as well as 9-pixel arrays. Thanks to the development of this process we obtained a very large percentage of quality junctions (>90%) with excellent measured normal resistances of a few micro-ohm cm{sup 2} and low leakage currents of the order of one

  9. Macroscopic quantum tunneling induced by a spontaneous field in intrinsic Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Chizaki, Y., E-mail: y.chizaki@aist.go.jp [Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)] [CREST, Japan Science and Technology Corporation (JST), Kawaguchi, Saitama 332-0012 (Japan); Kashiwaya, H.; Kashiwaya, S. [Nanoelectronics Research Institute (NeRI), AIST, Tsukuba, Ibaraki 305-8568 (Japan); Koyama, T. [CREST, Japan Science and Technology Corporation (JST), Kawaguchi, Saitama 332-0012 (Japan)] [Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577 (Japan); Kawabata, S. [Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)] [CREST, Japan Science and Technology Corporation (JST), Kawaguchi, Saitama 332-0012 (Japan)

    2011-11-15

    Derivation of an effective Hamiltonian in the case that one of the capacitively coupled junctions is in the finite voltage state. Calculation of MQT rate by using the Hamiltonian. The MQT rate is resonantly enhanced and the enhancement is found even when the bias current is off the resonant point. Discussion of the validity of the two types of enhancement. We theoretically study macroscopic quantum tunneling (MQT) in capacitively coupled Josephson junctions in the case that one of the junctions is in the finite voltage state. We find that the system can be mapped into a one dimensional model with a spontaneous periodic perturbation and calculate the MQT rate by using the time-dependent WKB method. Then the MQT rate is found to be resonantly enhanced and the enhancement of MQT rate is found even off the resonant point.

  10. Investigation of inelastic electron tunneling spectra of metal-molecule-metal junctions fabricated using direct metal transfer method

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Hyunhak; Hwang, Wang-Taek; Kim, Pilkwang; Kim, Dongku; Jang, Yeonsik; Min, Misook; Park, Yun Daniel; Lee, Takhee, E-mail: tlee@snu.ac.kr [Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Xiang, Dong [Institute of Modern Optics, Nankai University, Tianjin 300071 (China); Song, Hyunwook [Department of Applied Physics, Kyung Hee University, Yongin-si, Gyeonggi-do 446–701 (Korea, Republic of); Jeong, Heejun, E-mail: hjeong@hanyang.ac.kr [Department of Applied Physics, Hanyang University, Ansan 426-791 (Korea, Republic of)

    2015-02-09

    We measured the inelastic electron tunneling spectroscopy (IETS) characteristics of metal-molecule-metal junctions made with alkanethiolate self-assembled monolayers. The molecular junctions were fabricated using a direct metal transfer method, which we previously reported for high-yield metal-molecule-metal junctions. The measured IETS data could be assigned to molecular vibration modes that were determined by the chemical structure of the molecules. We also observed discrepancies and device-to-device variations in the IETS data that possibly originate from defects in the molecular junctions and insulating walls introduced during the fabrication process and from the junction structure.

  11. Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

    Science.gov (United States)

    Jiang, Jun; Zhang, X.-G.; Han, X. F.

    2016-04-01

    We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO x or Mg1-x Al x O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.

  12. Band structure of topological insulators from noise measurements in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Cascales, Juan Pedro, E-mail: juanpedro.cascales@uam.es; Martínez, Isidoro; Aliev, Farkhad G., E-mail: farkhad.aliev@uam.es [Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC), Universidad Autonoma de Madrid, Madrid 28049 (Spain); Katmis, Ferhat; Moodera, Jagadeesh S. [Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Chang, Cui-Zu [Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Guerrero, Rubén [Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Cantoblanco, 28049 Madrid (Spain)

    2015-12-21

    The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power spintronic devices. Here we present such a study in TIs, through tunneling and noise spectroscopy utilizing TI/Al{sub 2}O{sub 3}/Co tunnel junctions with bottom TI electrodes of either Bi{sub 2}Te{sub 3} or Bi{sub 2}Se{sub 3}. We demonstrate that features related to the band structure of the TI materials show up in the tunneling conductance and even more clearly through low frequency noise measurements. The bias dependence of 1/f noise reveals peaks at specific energies corresponding to band structure features of the TI. TI tunnel junctions could thus simplify the study of the properties of such quantum coherent systems that can further lead to the manipulation of their spin-polarized properties for technological purposes.

  13. Large magnetocapacitance effect in magnetic tunnel junctions based on Debye-Fröhlich model

    Energy Technology Data Exchange (ETDEWEB)

    Kaiju, Hideo, E-mail: kaiju@es.hokudai.ac.jp; Takei, Masashi; Misawa, Takahiro; Nishii, Junji [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Nagahama, Taro [School of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628 (Japan); Xiao, Gang [Department of Physics, Brown University, Providence, Rhode Island 02912 (United States)

    2015-09-28

    The frequency dependence of tunneling magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) is investigated theoretically and experimentally. According to the calculation based on Debye-Fröhlich model combined with Julliere formula, the TMC ratio strongly depends on the frequency and it has the maximum peak at a specific frequency. The calculated frequency dependence of TMC is in good agreement with the experimental results obtained in MgO-based MTJs with a tunneling magnetoresistance (TMR) ratio of 108%, which exhibit a large TMC ratio of 155% at room temperature. This calculation also predicts that the TMC ratio can be as large as about 1000% for a spin polarization of 87%, while the TMR ratio is 623% for the same spin polarization. These theoretical and experimental findings provide a deeper understanding on AC spin-dependent transport in the MTJs and will open up wider opportunities for device applications, such as highly sensitive magnetic sensors and impedance-tunable devices.

  14. Measuring the Momentum of a Nanomechanical Oscillator through the Use of Two Tunnel Junctions

    Science.gov (United States)

    Doiron, C. B.; Trauzettel, B.; Bruder, C.

    2008-01-01

    We propose a way to measure the momentum p of a nanomechanical oscillator. The p detector is based on two tunnel junctions in an Aharonov-Bohm-type setup. One of the tunneling amplitudes depends on the motion of the oscillator, the other one not. Although the coupling between the detector and the oscillator is assumed to be linear in the position x of the oscillator, it turns out that the finite-frequency noise output of the detector will in general contain a term proportional to the momentum spectrum of the oscillator. This is a true quantum phenomenon, which can be realized in practice if the phase of the tunneling amplitude of the detector is tuned by the Aharonov-Bohm flux Φ to a p-sensitive value.

  15. Spatial inhomogeneities in the energy response of a tunnel junction detector due to penetration of Abrikosov vortices

    NARCIS (Netherlands)

    Grand, le J.B.; Martin, J.; Gross, R.; Hubener, R.P.; Hamster, A.W.; Brons, G.C.S.; Adelerhof, D.J.; Flokstra, J.; Korte, de P.A.J.

    1996-01-01

    For the application of superconductive tunnel junctions (STJs) as high resolution X-ray detectors the homogeneity of the detector response is of utmost importance. In this article it is shown how this homogeneity is degraded by the penetration of Abrikosov vortices (AVs) into the junction electrodes

  16. Competing Anisotropy-Tunneling Correlation of the CoFeB/MgO Perpendicular Magnetic Tunnel Junction: An Electronic Approach.

    Science.gov (United States)

    Yang, Chao-Yao; Chang, Shu-Jui; Lee, Min-Han; Shen, Kuei-Hung; Yang, Shan-Yi; Lin, Horng-Ji; Tseng, Yuan-Chieh

    2015-11-24

    We intensively investigate the physical principles regulating the tunneling magneto-resistance (TMR) and perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO magnetic tunnel junction (MTJ) by means of angle-resolved x-ray magnetic spectroscopy. The angle-resolved capability was easily achieved, and it provided greater sensitivity to symmetry-related d-band occupation compared to traditional x-ray spectroscopy. This added degree of freedom successfully solved the unclear mechanism of this MTJ system renowned for controllable PMA and excellent TMR. As a surprising discovery, these two physical characteristics interact in a competing manner because of opposite band-filling preference in space-correlated symmetry of the 3d-orbital. An overlooked but harmful superparamagnetic phase resulting from magnetic inhomogeneity was also observed. This important finding reveals that simultaneously achieving fast switching and a high tunneling efficiency at an ultimate level is improbable for this MTJ system owing to its fundamental limit in physics. We suggest that the development of independent TMR and PMA mechanisms is critical towards a complementary relationship between the two physical characteristics, as well as the realization of superior performance, of this perpendicular MTJ. Furthermore, this study provides an easy approach to evaluate the futurity of any emerging spintronic candidates by electronically examining the relationship between their magnetic anisotropy and transport.

  17. Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

    Science.gov (United States)

    Hunt, Brian D. (Inventor); Leduc, Henry G. (Inventor)

    1992-01-01

    An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

  18. Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

    Directory of Open Access Journals (Sweden)

    Yaser Hajati

    2016-02-01

    Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

  19. Effective description of tunneling in a time-dependent potential with applications to voltage switching in Josephson junctions

    DEFF Research Database (Denmark)

    Andersen, Christian Kraglund; Mølmer, Klaus

    2013-01-01

    We propose to use a time-dependent imaginary potential to describe quantum mechanical tunneling through time-varying potential barriers. We use Gamow solutions for stationary tunneling problems to justify our choice of potential, and we apply our method to describe tunneling of a mesoscopic quantum...... variable: the phase change across a Josephson junction. The Josephson junction phase variable behaves as the position coordinate of a particle moving in a tilted washboard potential, and our general solution to the motion in such a potential with a time-dependent tilt reproduces a number of features...... associated with voltage switching in Josephson junctions. Apart from applications as artificial atoms in quantum information studies, the Josephson junction may serve as an electric field sensitive detector, and our studies provide a detailed understanding of how the voltage switching dynamics couples...

  20. Effective description of tunneling in a time-dependent potential with applications to voltage switching in Josephson junctions

    DEFF Research Database (Denmark)

    Andersen, Christian Kraglund; Mølmer, Klaus

    2013-01-01

    variable: the phase change across a Josephson junction. The Josephson junction phase variable behaves as the position coordinate of a particle moving in a tilted washboard potential, and our general solution to the motion in such a potential with a time-dependent tilt reproduces a number of features......We propose to use a time-dependent imaginary potential to describe quantum mechanical tunneling through time-varying potential barriers. We use Gamow solutions for stationary tunneling problems to justify our choice of potential, and we apply our method to describe tunneling of a mesoscopic quantum...... associated with voltage switching in Josephson junctions. Apart from applications as artificial atoms in quantum information studies, the Josephson junction may serve as an electric field sensitive detector, and our studies provide a detailed understanding of how the voltage switching dynamics couples...

  1. Rectification in tunneling junctions: 2,2'-bipyridyl-terminated n-alkanethiolates.

    Science.gov (United States)

    Yoon, Hyo Jae; Liao, Kung-Ching; Lockett, Matthew R; Kwok, Sen Wai; Baghbanzadeh, Mostafa; Whitesides, George M

    2014-12-10

    Molecular rectification is a particularly attractive phenomenon to examine in studying structure-property relationships in charge transport across molecular junctions, since the tunneling currents across the same molecular junction are measured, with only a change in the sign of the bias, with the same electrodes, molecule(s), and contacts. This type of experiment minimizes the complexities arising from measurements of current densities at one polarity using replicate junctions. This paper describes a new organic molecular rectifier: a junction having the structure Ag(TS)/S(CH2)11-4-methyl-2,2'-bipyridyl//Ga2O3/EGaIn (Ag(TS): template-stripped silver substrate; EGaIn: eutectic gallium-indium alloy) which shows reproducible rectification with a mean r(+) = |J(+1.0 V)|/|J(-1.0 V)| = 85 ± 2. This system is important because rectification occurs at a polarity opposite to that of the analogous but much more extensively studied systems based on ferrocene. It establishes (again) that rectification is due to the SAM, and not to redox reactions involving the Ga2O3 film, and confirms that rectification is not related to the polarity in the junction. Comparisons among SAM-based junctions incorporating the Ga2O3/EGaIn top electrode and a variety of heterocyclic terminal groups indicate that the metal-free bipyridyl group, not other features of the junction, is responsible for the rectification. The paper also describes a structural and mechanistic hypothesis that suggests a partial rationalization of values of rectification available in the literature.

  2. Comparison of the magneto-Peltier and magneto-Seebeck effects in magnetic tunnel junctions

    Science.gov (United States)

    Shan, J.; Dejene, F. K.; Leutenantsmeyer, J. C.; Flipse, J.; Münzenberg, M.; van Wees, B. J.

    2015-07-01

    Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck effect in MTJs, where the Seebeck coefficient of the junction varies as the magnetic configuration changes from a parallel (P) to an antiparallel (AP) configuration. Here we report a study on its reciprocal effect, the magneto-Peltier effect, where the heat flow carried by the tunneling electrons is altered by changing the magnetic configuration of the MTJ. The magneto-Peltier signal that reflects the change in the temperature difference across the junction between the P and AP configurations scales linearly with the applied current in the small bias but is greatly enhanced in the large-bias regime, due to higher-order Joule heating mechanisms. By carefully extracting the linear response which reflects the magneto-Peltier effect, and comparing it with the magneto-Seebeck measurements performed on the same device, we observe results consistent with Onsager reciprocity. We estimate a magneto-Peltier coefficient of 13.4 mV in the linear regime using a three-dimensional thermoelectric model. Our result opens up the possibility of programmable thermoelectric devices based on the Peltier effect in MTJs.

  3. Enhancing the spin transfer torque in magnetic tunnel junctions by ac modulation

    Science.gov (United States)

    Chen, Xiaobin; Zhou, Chenyi; Zhang, Zhaohui; Chen, Jingzhe; Zheng, Xiaohong; Zhang, Lei; Hu, Can-Ming; Guo, Hong

    2017-03-01

    The phenomenon of spin transfer torque (STT) has attracted a great deal of interest due to its promising prospects in practical spintronic devices. In this paper, we report a theoretical investigation of STT in a noncollinear magnetic tunnel junction under ac modulation based on the nonequilibrium Green's-function formalism, and we derive a closed formulation for predicting the time-averaged STT. Using this formulation, the ac STT of a carbon-nanotube-based magnetic tunnel junction is analyzed. Under ac modulation, the low-bias linear (quadratic) dependence of the in-plane (out-of-plane) torque on bias still holds, and the sinθ dependence on the noncollinear angle is maintained. By photon-assisted tunneling, the bias-induced components of the in-plane and out-of-plane torques can be enhanced significantly, about 12 and 75 times, respectively. Our analysis reveals the condition for achieving optimized STT enhancement and suggests that ac modulation is a very effective way for electrical manipulation of STT.

  4. Effect of interface geometry on electron tunnelling in Al/Al2O3/Al junctions

    Science.gov (United States)

    Koberidze, M.; Feshchenko, A. V.; Puska, M. J.; Nieminen, R. M.; Pekola, J. P.

    2016-04-01

    We investigate how different interface geometries of an Al/Al2O3 junction, a common component of modern tunnel devices, affect electron transport through the tunnel barrier. We study six distinct Al/Al2O3 interfaces which differ in stacking sequences of the metal and the oxide surface atoms and the oxide termination. To construct model potential barrier profiles for each examined geometry, we rely on first-principles density-functional theory (DFT) calculations for the barrier heights and the shapes of the interface regions as well as on experimental data for the barrier widths. We show that even tiny variations in the atomic arrangement at the interface cause significant changes in the tunnel barrier parameters and, consequently, in electron transport properties. Especially, we find that variations in the crucial barrier heights and widths can be as large as 2 eV and 5 Å, respectively. Finally, to gain information about the average properties of the measured junction, we fit the conductance calculated within the Wentzel-Kramers-Brillouin approximation to the experimental data and interpret the fit parameters with the help of the DFT results.

  5. Dynamic strain-induced giant electroresistance and erasing effect in ultrathin ferroelectric tunnel-junction memory

    Science.gov (United States)

    Yau, Hei-Man; Xi, Zhongnan; Chen, Xinxin; Wen, Zheng; Wu, Ge; Dai, Ji-Yan

    2017-06-01

    Strain engineering plays a critical role in ferroelectric memories. In this work, we demonstrate dynamic strain modulation on tunneling electroresistance in a four-unit-cell ultrathin BaTi O3 metal/ferroelectric/semiconductor tunnel junction by applying mechanical stress to the device. With an extra compressive strain induced by mechanical stress, which is dynamically applied beyond the lattice mismatch between the BaTi O3 layer and the Nb :SrTi O3 substrate, the ON/OFF current ratio increases significantly up to a record high value of 107, whereas a mechanical erasing effect can be observed when a tensile stress is applied. This dynamic strain engineering gives rise to an efficient modulation of ON/OFF ratio due to the variation of BaTi O3 polarization. This result sheds light on the mechanism of electroresistance in the ferroelectric tunnel junctions by providing direct evidence for polarization-induced resistive switching, and also provides another stimulus for memory state operation.

  6. Superconducting Tunnel Junction Refrigerators for Sub-Kelvin Cooling of Electrons, Phonons, and Arbitrary, User-Supplied Payloads

    Science.gov (United States)

    Lowell, Peter Joseph

    Modern science often requires measurements at sub-Kelvin temperatures. Temperatures of 300 mK can be reached by using liquid 3He, but reaching lower temperatures requires the use of adiabatic demagnetization and dilution refrigerators which are complex, large, and costly. Normal-metalInsulatorSuperconductor (NIS) tunnel junctions provide an alternative refrigeration method that is simple to use, compact, and provides continuous cooling power that has the potential to expand the accessibility of these sub-Kelvin temperatures. When properly biased, the electron system in the normal metal of an NIS junction is cooled since the hottest electrons preferentially tunnel from the normal metal to the superconductor, transferring heat in the process. When the normal metal is extended onto a thermally isolated membrane, the cold electrons cool the phonons in the membrane through electron-phonon coupling. In previous work, NIS junctions have been used to cool detectors and bulk objects that were integrated with the membrane, but could not be considered a general-purpose refrigerator since they could not cool arbitrary objects. The goal of this work has been to demonstrate a general-purpose NIS refrigerator to which a user can attach arbitrary bulk objects. First, we discuss NIS refrigeration and then develop a model to predict phonon cooling. We fabricated and tested NIS refrigerators capable of cooling bulk objects and used the model to explain the results. The devices were able to cool phonons from 300 mK to 154 mK with 100 pW of cooling power at 200 mK. With these devices, we were able to cool a 2 cm3 piece of copper from 290 mK to 256 mK with 700 pW of cooling power at 290 mK. This demonstration marks the emergence of NIS refrigerators as a true, general-purpose refrigerator since users can attach arbitrary objects. Measurements of Andreev reflections in the devices and next-generation refrigerators that cool electrons from 100 mK to below 50 mK are also presented.

  7. Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions

    Science.gov (United States)

    Tang, Y.-H.; Chu, F.-C.; Kioussis, Nicholas

    2015-06-01

    We predict a giant field-like spin torque, , in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF’s exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of via magnetic field switching. The underlying mechanism is the interlayer exchange coupling between the noncollinear magnetizations of the SF and free ferromagnetic electrode via the nonmagnetic insulating (I) spacer giving rise to giant spin-dependent reflection at the SF/I interface. These findings suggest that the proposed field-like-spin-torque MRAM may provide promising dual functionalities for both ‘reading’ and ‘writing’ processes which require lower critical current densities and faster writing and reading speeds.

  8. Inelastic electron tunneling through degenerate and nondegenerate ground state polymeric junctions

    Energy Technology Data Exchange (ETDEWEB)

    Golsanamlou, Z.; Bagheri Tagani, M., E-mail: m_bagheri@guilan.ac.ir; Rahimpour Soleimani, H.

    2015-05-01

    Highlights: • Current–voltage characteristics of two polymeric junctions are studied. • Current is reduced in phonon assistant tunneling regime. • Behavior of current is independent of temperature. • Elastic energy changes current drastically. - Abstract: The inelastic electron transport properties through two polymeric (trans-polyacetylene and polythiophene) molecular junctions are studied using Keldysh nonequilibrium Green function formalism. The Hamiltonian of the polymers is described via Su–Schrieffer–Heeger model and the metallic electrodes are modeled by the wide-band approximation. Results show that the step-like behavior of the current–voltage characteristics is deformed in presence of strong electron–phonon interaction. Also, the magnitude of current is slightly decreased in the phonon assistant electron transport regime. In addition, it is observed that the I–V curves are independent of temperature.

  9. Size and voltage dependence of effective anisotropy in sub-100-nm perpendicular magnetic tunnel junctions

    Science.gov (United States)

    Piotrowski, Stephan K.; Bapna, Mukund; Oberdick, Samuel D.; Majetich, Sara A.; Li, Mingen; Chien, C. L.; Ahmed, Rizvi; Victora, R. H.

    2016-07-01

    Magnetic tunnel junctions with perpendicular magnetic anisotropy are investigated using a conductive atomic force microscope. The 1.23 -nm Co40Fe40B20 recording layer coercivity exhibits a size dependence which suggests single-domain behavior for diameters ≤100 nm. Focusing on devices with diameters smaller than 100 nm, we determine the effect of voltage and size on the effective device anisotropy Keff using two different techniques. Keff is extracted both from distributions of the switching fields of the recording and reference layers and from measurement of thermal fluctuations of the recording layer magnetization when a field close to the switching field is applied. The results from both sets of measurements reveal that Keff increases monotonically with decreasing junction diameter, consistent with the size dependence of the demagnetization energy density. We demonstrate that Keff can be controlled with a voltage down to the smallest size measured, 64 nm.

  10. Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles

    Energy Technology Data Exchange (ETDEWEB)

    Kan, E.; Xiang, H.; Yang, J.; Whangbo, M. H.

    2009-06-01

    Semiconductor magnetic tunnel junctions (MTJs), composed of diluted magnetic semiconductors (DMSs) sandwiching a semiconductor barrier, have potential applications in spintronics but their development has been slow due to the difficulty of controlling the magnetism of DMSs. In terms of density functional calculations for model semiconductor MTJs, (Zn,Co)O/ZnO/(Zn,Co)O and (Ga,Mn)N/GaN/(Ga,Mn)N, we show that the magnetic coupling between the transition metal ions in each DMS electrode of such semiconductor MTJs can be switched from ferromagnetic to antiferromagnetic, or vice versa, under the application of external electric field across the junctions. Our results suggest a possible avenue for the application of semiconductor MTJs.

  11. Tetragonal Heusler-Like Mn-Ga Alloys Based Perpendicular Magnetic Tunnel Junctions

    Science.gov (United States)

    Ma, Qinli; Sugihara, Atsushi; Suzuki, Kazuya; Zhang, Xianmin; Miyazaki, Terunobu; Mizukami, Shigemi

    2014-10-01

    Films of the Mn-based tetragonal Heusler-like alloys, such as Mn-Ga, exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn-based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

  12. Disorder Scattering in Magnetic Tunnel Junctions: Theory of Nonequilibrium Vertex Correction

    Science.gov (United States)

    Ke, Youqi; Xia, Ke; Guo, Hong

    2008-04-01

    We report a first principles formalism and its numerical implementation for treating quantum transport properties of nanoelectronic devices with atomistic disorder. We develop a nonequilibrium vertex correction (NVC) theory to handle the configurational average of random disorder at the density matrix level so that disorder effects to nonlinear and nonequilibrium quantum transport can be calculated from atomic first principles in a self-consistent and efficient manner. We implement the NVC into a Keldysh nonequilibrium Green’s function (NEGF) -based density functional theory (DFT) and apply the NEGF-DFT-NVC formalism to Fe/vacuum/Fe magnetic tunnel junctions with interface roughness disorder. Our results show that disorder has dramatic effects on the nonlinear spin injection and tunnel magnetoresistance ratio.

  13. Magnetic-Field-Modulated Resonant Tunneling in Ferromagnetic-Insulator-Nonmagnetic Junctions

    Science.gov (United States)

    Song, Yang; Dery, Hanan

    2014-07-01

    We present a theory for resonance-tunneling magnetoresistance (MR) in ferromagnetic-insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather than spin accumulation in the nonmagnetic channel corresponds to the electrically detected signal. We quantify the dependence of the tunnel current on the magnetic field by quantum rate equations derived from the Anderson impurity model, with the important addition of impurity spin interactions. Considering the on-site Coulomb correlation, the MR effect is caused by competition between the field, spin interactions, and coupling to the magnetic lead. By extending the theory, we present a basis for operation of novel nanometer-size memories.

  14. Degradation of magnetic tunnel junctions with thin AlOx barrier

    Directory of Open Access Journals (Sweden)

    Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi

    2007-01-01

    Full Text Available The degradation of magnetic tunnel junctions (MTJs with AlOx barrier was experimentally investigated. Constant voltage stress (CVS measurement was carried out to monitor the time evolution of the conductance and tunneling magnetoresistance (TMR of MTJs. The gradual increase of the stress-induced leakage current (SILC was observed prior to the breakdown, following a power law function of stress time with an exponent of about 0.2–0.4, which is similar to the case of the ultrathin gate oxide films in MOSFETs. The measured TMR for SILC suggests that the spin-dependent current component would be involved in the early stage of degradation, while spin-independent conduction becomes dominant before the breakdown resulting in a decrease of TMR.

  15. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    Directory of Open Access Journals (Sweden)

    Jean-Baptiste Laloë

    2011-01-01

    Full Text Available Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a of 39 K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

  16. Electron Holography of Barrier Structures in Co/ZrAlOx/Co Magnetic Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    ZHANG Zhe; ZHU Tao; SHEN Feng; SHENG Wen-Ting; WANG Wei-Gang; XIAO John Q; ZHANG Ze

    2005-01-01

    @@ We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together,indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The EH results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.

  17. Optical modulation of nano-gap tunnelling junctions comprising self-assembled monolayers of hemicyanine dyes

    Science.gov (United States)

    Pourhossein, Parisa; Vijayaraghavan, Ratheesh K.; Meskers, Stefan C. J.; Chiechi, Ryan C.

    2016-06-01

    Light-driven conductance switching in molecular tunnelling junctions that relies on photoisomerization is constrained by the limitations of kinetic traps and either by the sterics of rearranging atoms in a densely packed monolayer or the small absorbance of individual molecules. Here we demonstrate light-driven conductance gating; devices comprising monolayers of hemicyanine dyes trapped between two metallic nanowires exhibit higher conductance under irradiation than in the dark. The modulation of the tunnelling current occurs faster than the timescale of the measurement (~1 min). We propose a mechanism in which a fraction of molecules enters an excited state that brings the conjugated portion of the monolayer into resonance with the electrodes. This mechanism is supported by calculations showing the delocalization of molecular orbitals near the Fermi energy in the excited and cationic states, but not the ground state and a reasonable change in conductance with respect to the effective barrier width.

  18. Behavioural model of Spin Torque Transfer Magnetic Tunnel Junction, Using Verilog-A

    Science.gov (United States)

    Garg, Rishubh; Kumar, Deepak; Jindal, Navneet; Negi, Nandita; Ahuja, Chetna

    2012-11-01

    A novel simple and efficient model of Spin Torque Transfer Magnetic Tunnel Junction (STT-MTJ) is presented. The model is implemented using Verilog-A. The model accurately emulates the main properties of an STT-MTJ which includes Tunnel Magneto resistance Ratio (TMR), its dependence on the voltage bias and the Critical switching current. The novelty of the model lies in the fact that the voltage dependence of TMR has been modeled using a single equation dividing it into three different operating regions. A register based on the model is also developed. The model can be used for faster simulations of hybrid Magnetic CMOS circuits and in various other wide range of applications. The models were verified using Synopsys Hspice 2010.

  19. Investigating the quasiparticle dynamics operating in the electrodes of superconducting tunnel junctions using nanosecond phonon pulses

    CERN Document Server

    Steele, A

    2000-01-01

    this thesis data from phonon experiments are used to directly determine values for the parameters of an STJ such as the quasiparticle loss and tunnel rates in its electrodes. It is also shown how the input energy, in the form of phonons capable of breaking Cooper pairs, and the corresponding charge output from the device can be determined. These values are then compared with those obtained from x-ray absorption data. This thesis is concerned with the use of nanosecond phonon pulses to study quasiparticle behaviour in the electrodes of high-quality niobium superconducting tunnel junctions (STJs). This work is part of a collaboration with the Astrophysics Research and Development Division of the European Space Agency (ESA) at ESTEC. STJs are being widely investigated as photon detectors over a broad range of the electromagnetic spectrum. They potentially offer excellent energy resolution, time response and photon counting capabilities. The primary aim of this research was to use phonon pulses to investigate qua...

  20. All-Optical Switching of Magnetic Tunnel Junctions with Single Subpicosecond Laser Pulses

    Science.gov (United States)

    Chen, Jun-Yang; He, Li; Wang, Jian-Ping; Li, Mo

    2017-02-01

    The magnetic tunnel junction (MTJ) is one of the most important building blocks of spintronic logic and memory components for beyond-CMOS computation and communication. Although switching of MTJs without magnetic field has been achieved by charge and spin current injection, the operation speed is limited fundamentally by the spin-precession time to many picoseconds. We report the demonstration of ultrafast all-optical switching of an MTJ using single subpicosecond infrared laser pulses. This optically switchable MTJ uses ferrimagnetic Gd(Fe,Co) as the free layer and its switching is read out by measuring its tunneling magnetoresistance with a Δ R /R ratio of 0.6%. A switching repetition rate at MHz has been demonstrated, but the fundamental upper limit should be higher than tens of GHz rate. This result represents an important step toward integrated optospintronic devices that combines spintronics and photonics technologies to enable ultrafast conversion between fundamental information carriers of electron spins and photons.

  1. Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C. H.; Cheng, Y. H.; Ko, C. W.; Hsueh, W. J., E-mail: hsuehwj@ntu.edu.tw [Nanomagnetism Group, Department of Engineering Science and Ocean Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei 10660, Taiwan (China)

    2015-10-12

    This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed to the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.

  2. Observation of thermally driven field-like spin torque in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bose, Arnab, E-mail: arnabbose@ee.iitb.ac.in; Jain, Sourabh; Asam, Nagarjuna; Bhuktare, Swapnil; Singh, Hanuman; Tulapurkar, Ashwin A. [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Shukla, Amit Kumar; Konishi, Katsunori; Lam, Duc Duong; Fujii, Yuya; Miwa, Shinji; Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)

    2016-07-18

    We report the thermally driven giant field-like spin-torque in magnetic tunnel junctions (MTJ) on application of heat current from top to bottom. The field-like term is detected by the shift of the magneto-resistance hysteresis loop applying temperature gradient. We observed that the field-like term depends on the magnetic symmetry of the MTJ. In asymmetric structures, with different ferromagnetic materials for free and fixed layers, the field-like term is greatly enhanced. Our results show that a pure spin current density of the order of 10{sup 9 }A/m{sup 2} can be produced by creating a 120 mK temperature difference across 0.9 nm thick MgO tunnelling barrier. Our results will be useful for writing MTJ and domain wall-based memories using thermally driven spin torque.

  3. Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

    KAUST Repository

    Yin, Y. W.

    2015-03-03

    As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

  4. HfO2 and SiO2 as barriers in magnetic tunneling junctions

    Science.gov (United States)

    Shukla, Gokaran; Archer, Thomas; Sanvito, Stefano

    2017-05-01

    SiO2 and HfO2 are both high-k, wide-gap semiconductors, currently used in the microelectronic industry as gate barriers. Here we investigate whether the same materials can be employed to make magnetic tunnel junctions, which in principle can be amenable for integration in conventional Si technology. By using a combination of density functional theory and the nonequilibrium Green's functions method for quantum transport we have studied the transport properties of Co [0001 ] /SiO2[001 ] /Co [0001 ] and Fe [001 ] /HfO2[001 ] /Fe [001 ] junctions. In both cases we found a quite large magnetoresistance, which is explained through the analysis of the real band structure of the magnets and the complex one of the insulator. We find that there is no symmetry spin filtering for the Co-based junction since the high transmission Δ2' band crosses the Fermi level, EF, for both spin directions. However, the fact that Co is a strong ferromagnet makes the orbital contribution to the two Δ2' spin subbands different, yielding magnetoresistance. In contrast for the Fe-based junction symmetry filtering is active for an energy window spanning between the Fermi level and 1 eV below EF, with Δ1 symmetry contributing to the transmission.

  5. Tunneling electroresistance effect in ultrathin BiFeO3-based ferroelectric tunneling junctions

    Science.gov (United States)

    Yoong, Herng Yau; Wang, Han; Xiao, Juanxiu; Guo, Rui; Yang, Ping; Yang, Yi; Lim, Sze Ter; Wang, John; Venkatesan, T.; Chen, Jingsheng

    2016-12-01

    Tunneling electroresistance (TER) effect has been observed in high quality ultrathin BiFeO3 thin films. The growth quality of the ultrathin BiFeO3 films was confirmed using the synchrotron high resolution X-ray diffraction techniques as well as high-resolution transmission electron microscopy. Ferroelectric-based resistive switching behavior is observed down to 2 u.c. of BiFeO3 ultrathin film, which is way below the critical thickness of BiFeO3 thin films exhibiting ferroelectricity reported in the previous research works. Upon fitting mathematically using the direct tunneling model, it could be seen that there is an increase in the change in the average potential barrier height when the barrier thickness increases from 2 u.c. to 10 u.c., which also results in an increase in the TER ratio by one order of magnitude. These results are promising and pave the way for developing ultrathin BiFeO3 films to be adopted in the non-volatile memory applications.

  6. Probing flexible conformations in molecular junctions by inelastic electron tunneling spectroscopy

    Directory of Open Access Journals (Sweden)

    Mingsen Deng

    2015-01-01

    Full Text Available The probe of flexible molecular conformation is crucial for the electric application of molecular systems. We have developed a theoretical procedure to analyze the couplings of molecular local vibrations with the electron transportation process, which enables us to evaluate the structural fingerprints of some vibrational modes in the inelastic electron tunneling spectroscopy (IETS. Based on a model molecule of Bis-(4-mercaptophenyl-ether with a flexible center angle, we have revealed and validated a simple mathematical relationship between IETS signals and molecular angles. Our results might open a route to quantitatively measure key geometrical parameters of molecular junctions, which helps to achieve precise control of molecular devices.

  7. Parametric amplification on rf-induced steps in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Sørensen, O.H.; Pedersen, Niels Falsig; Mygind, Jesper

    1979-01-01

    Parametric effects including amplification in a singly degenerate mode have been observed in Josephson tunnel junctions at dc bias points on rf-induced steps. Net gain at 9 GHz was achieved with a bias on the fundamental 18-GHz step and subharmonic self-oscillations were seen on 18 and 70-GHz rf-......-induced steps even at voltages approaching the energy gap. A qualitative explanation of the results is presented. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  8. Electrical switching in Fe/V/MgO/Fe tunnel junctions

    Science.gov (United States)

    Najjari, N.; Halley, D.; Bowen, M.; Majjad, H.; Henry, Y.; Doudin, B.

    2010-05-01

    Bipolar hysteretic resistance switching in epitaxial Fe/V/MgO/Fe magnetic tunnel junctions is observed in highly reproducible I(V) curves and found to be modified by the frequency of the bias voltage sweep. Observation of slow relaxation of the resistance state values is reported. A model is proposed that takes into account the incidence of time-dependent electric-field-induced migration of atomic species on the effective barrier thickness. This model provides a good qualitative agreement with experimental data.

  9. Observation of Thermoelectric Currents in High-Field Superconductor-Ferromagnet Tunnel Junctions.

    Science.gov (United States)

    Kolenda, S; Wolf, M J; Beckmann, D

    2016-03-01

    We report on the experimental observation of spin-dependent thermoelectric currents in superconductor-ferromagnet tunnel junctions in high magnetic fields. The thermoelectric signals are due to a spin-dependent lifting of the particle-hole symmetry, and are found to be in excellent agreement with recent theoretical predictions. The maximum Seebeck coefficient inferred from the data is about -100  μV/K, much larger than commonly found in metallic structures. Our results directly prove the coupling of spin and heat transport in high-field superconductors.

  10. Spontaneous fluxon production in annular Josephson tunnel junctions in the presence of a magnetic field

    DEFF Research Database (Denmark)

    Monaco, Roberto; Aarøe, Morten; Mygind, Jesper;

    2008-01-01

    We report on the spontaneous production of fluxons in annular Josephson tunnel junctions during a thermal quench in the presence of a symmetry-breaking magnetic field. The dependence on field intensity B of the probability (f) over bar (1) to trap a single defect during the N-S phase transition...... depends drastically on the sample circumferences. We show that this can be understood in the framework of the same picture of spontaneous defect formation that leads to the experimentally well attested scaling behavior of (f) over bar (1) with quench rate in the absence of an external field....

  11. Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peng; Feng, Jiafeng, E-mail: hxwei@iphy.ac.cn, E-mail: jiafengfeng@iphy.ac.cn; Wei, Hongxiang, E-mail: hxwei@iphy.ac.cn, E-mail: jiafengfeng@iphy.ac.cn; Han, Xiufeng [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Fang, Bin; Zhang, Baoshun; Zeng, Zhongming [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123 (China)

    2015-01-05

    We experimentally study the temperature dependence of the spin-transfer-torque-induced microwave oscillations in MgO-based magnetic tunnel junction nanopillars with a perpendicularly magnetized free layer. We demonstrate that the oscillation frequency increases rapidly with decreasing temperature, which is mainly ascribed to the temperature dependence of both the saturation magnetization and the perpendicular magnetic anisotropy. We also find that a strong temperature dependence of the output power while a nonmonotonic temperature dependence of spectral linewidth are maintained for a constant dc bias in measured temperature range. Possible mechanisms leading to the different dependences of oscillation frequency, output power, and linewidth are discussed.

  12. All-optical detection of magnetization precession in tunnel junctions under applied voltage

    Science.gov (United States)

    Sasaki, Yuta; Suzuki, Kazuya; Sugihara, Atsushi; Kamimaki, Akira; Iihama, Satoshi; Ando, Yasuo; Mizukami, Shigemi

    2017-02-01

    An all-optical time-resolved magneto-optical Kerr effect measurement of a micron-sized tunnel junction with a CoFeB electrode was performed. The femtosecond (fs) laser-induced magnetization precession was clearly observed at various magnetic field angles. The frequency f and relaxation time τ of the magnetization precession varied with the voltage applied via a MgO barrier. The precession dynamics were in accordance with Kittel’s ferromagnetic resonance mode, and the voltage-induced changes in f and τ were well explained by the voltage-induced change in the perpendicular magnetic anisotropy of -36 fJ/Vm.

  13. Development and process control of magnetic tunnel junctions for magnetic random access memory devices

    Science.gov (United States)

    Kula, Witold; Wolfman, Jerome; Ounadjela, Kamel; Chen, Eugene; Koutny, William

    2003-05-01

    We report on the development and process control of magnetic tunnel junctions (MTJs) for magnetic random access memory (MRAM) devices. It is demonstrated that MTJs with high magnetoresistance ˜40% at 300 mV, resistance-area product (RA) ˜1-3 kΩ μm2, low intrinsic interlayer coupling (Hin) ˜2-3 Oe, and excellent bit switching characteristics can be developed and fully integrated with complementary metal-oxide-semiconductor circuitry into MRAM devices. MTJ uniformity and repeatability level suitable for mass production has been demonstrated with the advanced processing and monitoring techniques.

  14. Tailoring the properties of a magnetic tunnel junction to be used as a magnetic field sensor

    OpenAIRE

    Nguyen, Hugo; Persson, Anders

    2011-01-01

    A magnetic tunnel junction (MTJ) can be used as an effective magnetic field sensor thank to its high magnetoresistance ratio. To be used as a magnetic field sensor in different applications, the possibility of tuning the performance of the MTJ is important. Different means of tuning, such as voltage and magnetic field biasing, can be used. In this work, an external magnetic field from a permanent magnet was used to bias the sensing layer of a MTJ along its hard axis, and the effect of the bia...

  15. Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction

    Directory of Open Access Journals (Sweden)

    Chikako Yoshida

    2017-05-01

    Full Text Available The feasibility of a voltage assisted unipolar switching in perpendicular magnetic tunnel junction (MTJ has been studied using a micromagnetic simulation. Assuming a linear modulation of anisotropy field with voltage, both parallel (P to anti-parallel (AP and AP to P switchings were observed by application of unipolar voltage pulse without external magnetic field assistance. In latter case, the final P state can only be achieved with an ultrashort voltage pulse which vanishes before spin transfer torque (STT becomes dominant to restore the initial AP state. In addition, it was found that the larger change in anisotropy field is required for the MTJ with smaller diameter.

  16. Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

    Science.gov (United States)

    Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

    2014-01-01

    A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJbased microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

  17. Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction devices.

    Science.gov (United States)

    Liu, Luqiao; Pai, Chi-Feng; Ralph, D C; Buhrman, R A

    2012-11-02

    We show that a direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device, the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for developing tunable spin torque nano-oscillators.

  18. Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction

    Science.gov (United States)

    Yoshida, Chikako; Noshiro, Hideyuki; Yamazaki, Yuichi; Sugii, Toshihiro; Tanaka, Tomohiro; Furuya, Atsushi; Uehara, Yuji

    2017-05-01

    The feasibility of a voltage assisted unipolar switching in perpendicular magnetic tunnel junction (MTJ) has been studied using a micromagnetic simulation. Assuming a linear modulation of anisotropy field with voltage, both parallel (P) to anti-parallel (AP) and AP to P switchings were observed by application of unipolar voltage pulse without external magnetic field assistance. In latter case, the final P state can only be achieved with an ultrashort voltage pulse which vanishes before spin transfer torque (STT) becomes dominant to restore the initial AP state. In addition, it was found that the larger change in anisotropy field is required for the MTJ with smaller diameter.

  19. Charge filling factors in clean and disordered arrays of tunnel junctions.

    Science.gov (United States)

    Walker, Kelly A; Vogt, Nicolas; Cole, Jared H

    2015-12-02

    We simulate one-dimensional arrays of tunnel junctions using the kinetic Monte Carlo method to study charge filling behaviour in the large charging energy limit. By applying a small fixed voltage bias and varying the offset voltage, we investigate this behaviour in clean and disordered arrays (both weak and strong disorder effects). The offset voltage dependent modulation of the current is highly sensitive to background charge disorder and exhibits substantial variation depending on the strength of the disorder. We show that while small fractional charge filling factors are likely to be washed out in experimental devices due to strong background charge disorder, larger factors may be observable.

  20. Symmetry dependent spin injection from Fe/MgO in single crystal based magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Hehn, Michel; Greullet, Fanny; Bernos, Julien; Tiusan, Coriolan; Bellouard, Christine; Montaigne, Francois; Lacour, Daniel; Alnot, Marc; Lu, Yuan; Lengaigne, Gwladys [LPM, Vandoeuvre les Nancy (France); Halley, David; Weber, Wolfgang [IPCMS, 67 - Strasbourg (France)

    2009-07-01

    The transport in crystalline magnetic tunnel junctions (MTJ) attracted the interest of the international community after the theoretical predictions of Butler et al of giant tunnel magnetoresistance (TMR) effects. In these model systems the electrons are classified with respect to the symmetry of their associated electronic Bloch wave function. The large predicted TMR ratio is related to a symmetry dependent attenuation rate within the MgO single crystal barrier combined with a half metallic property of a specific symmetry in the Fe electrode. After a brief introduction to the physics of the transport in Fe/MgO/Fe MTJ, I show how to exploit the symmetry dependence of the tunnel conductivity to engineer novel MTJs functionalities. We demonstrate that, a suitably chosen Cr(001) epitaxial metallic spacer layer quenches the transmission of particular electronic states, therefore acting as an additional symmetry dependent tunnel barrier for electrons at the Fermi level. Moreover, we show that this ultrathin Cr metallic barrier can promote quantum well states in an adjacent Fe layer. These results confirm the transport mechanism proposed by Butler et al. Extension to other materials are also discussed.

  1. Noise and current correlations in tunnel junctions of quantum spin Hall edge states

    Science.gov (United States)

    Dolcini, Fabrizio

    2015-10-01

    The edge channels of two-dimensional topological systems are protected from elastic reflection and are noiseless at low temperature. Yet, noise and cross correlations can be induced when electron waves partly transmit to the opposite edge via tunneling through a constriction. In particular, in a quantum spin Hall (QSH) system tunneling occurs via both spin-preserving (p ) and spin-flipping (f ) processes, each fulfilling time-reversal symmetry. We investigate the current correlations of a four-terminal QSH setup in the presence of a tunneling region, both at equilibrium and out of equilibrium. We find that, although p and f processes do not commute and the generic current correlation depends on both, under appropriate conditions a direct detection of two types of partition noise is possible. In particular, while the spin-preserving partitioning can be probed for any arbitrary tunnel junction with a specific configuration of terminal biases, the spin-flipping partitioning can be directly detected only under suitably designed setups and conditions. We describe two setups where these conditions can be fulfilled, and both types of partitioning can be detected and controlled.

  2. Scanning tunneling microscope light emission: Effect of the strong dc field on junction plasmons

    Science.gov (United States)

    Kalathingal, Vijith; Dawson, Paul; Mitra, J.

    2016-07-01

    The observed energies of the localized surface plasmons (LSPs) excited at the tip-sample junction of a scanning tunneling microscope, as identified by spectral peaks in the light output, are very significantly redshifted with respect to calculations that use standard optical data for the tip and sample material, gold in this case. We argue that this anomaly depends on the extreme field in the sub-nm tunneling proximity of the tip and the sample, across which a dc bias (1-2 V) is applied. Finite element modeling analysis is presented of a gold nanosphere-plane (NS-P) combination in tunneling proximity and, crucially, in the presence of a high static electric field (˜109V /m ). It is argued that the strong dc field induces nonlinear corrections to the dielectric function of the gold via the effect of a large background polarizability through the nonlinear, χ(3 ) susceptibility contribution. When fed into the model system the modified optical data alters the LSP cavity modes of the NS-P system to indeed reveal a large redshift in energy compared to those of the virgin gold NS-P system. The net outcome may be regarded as equivalent to lowering the bulk plasmon energy, the physical interpretation being that the intense field of the tunneling environment leads to surface charge screening, effectively reducing the density of free electrons available to participate in the plasmon oscillations.

  3. Novel modeling and dynamic simulation of magnetic tunnel junctions for spintronic sensor development

    Science.gov (United States)

    Ji, Yu; Liu, Jie; Yang, Chunsheng

    2017-01-01

    Spintronic magnetic sensors with the integration of magnetic materials and microstructures have been enabling people to make use of the electron spin and charge properties in many applications. The high demand for such sensors has in turn spurred the technology developments in both novel materials and their atomic-level controls. Few works, however, have been carried out and reported thus far in modeling and simulation of these spintronic magnetic sensing units based on magnetic tunnel junction (MTJ) technology. Accordingly, this paper proposes a novel modeling approach as well as an iterative simulation methodology for MTJs. A more comprehensive electrical tunneling model is established for better interpreting the conductance and current generated by the electron tunneling, and this model can also facilitate the iterative simulation of the micromagnetic dynamics. Given the improved tunneling model as well as the updated dynamic simulation, the electric characteristics of an MTJ with an external magnetic field can be conveniently computed, which provides a reliable benchmark for the future development of novel spintronic magnetic sensors.

  4. Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

    Directory of Open Access Journals (Sweden)

    Weisheng Zhao

    2016-01-01

    Full Text Available Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

  5. Magnetic tunnel junctions using Co/Pt multilayered free layers with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Machida, K; Funabashi, N; Aoshima, K; Kuga, K; Kikuchi, H; Shimidzu, N [Science and Technology Research Labs., Japan Broadcasting Corp. (NHK), 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510 (Japan); Furukawa, K; Nakayama, T [Department of Electrical Engineering, Tokyo Denki University, 2-2 Kandanishikicho, Chiyoda-ku, Tokyo 101-8457 (Japan); Ishibashi, T, E-mail: machida.k-ge@nhk.or.jp [Department of Materials Science and Technology, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 (Japan)

    2011-07-06

    Co/Pt multilayered films with perpendicular magnetic anisotropy have a large magneto-optical Kerr effect. To use the films with a submicron magneto-optical light modulator driven by spin transfer switching, we fabricated two types of magnetic tunnel junctions (MTJs) with Co/Pt multilayered films for the free layers. One is an fcc-based MTJ, another is a bcc-based MTJ with CoFeB/MgO/CoFeB junction. The fcc-based MTJ with a Ag buffer layer on the bottom electrode showed a large coercive force of the pinned layer, a large Kerr rotation angle of 0.3 degree in the free layer and a tunnel magnetoresistance (TMR) ratio of 3.8%. In the CoFeB/MgO/CoFeB junction, an X-ray diffraction pattern of an MgO layer showed a large MgO(002)-orientation. However, the TMR ratio was less than 3 %. An MTJ with a Ta buffer layer between the CoFeB layer and the Co/Pt multilayered films in the free layer was prepared. The Ta buffer was used to alleviate a lattice mismatch between bcc-CoFeB/MgO/CoFeB and fcc-Co/Pt multilayer. The peak intensity of the MgO(002)-orientation was increased up to 2 times. This result suggests that the crystalline texture of the bcc-CoFeB/MgO/CoFeB junction is strongly influenced by the fcc-Co/Pt multilayered films.

  6. Large influence of capping layers on tunnel magnetoresistance in CoFe/MgO/CoFe magnetic tunnel junctions

    CERN Document Server

    Zhou, Jiaqi; Wang, Yin; Peng, Shouzhong; Qiao, Junfeng; Su, Li; Zeng, Lang; Lei, Na; Zhang, Youguang; Bournel, Arnaud

    2016-01-01

    We report the first-principles theoretical investigations of the tunnel magnetoresistance(TMR) effect in the symmetric capping layer/CoFe(001)/MgO(001)/CoFe(001)/capping layer magnetic tunnel junctions(MTJs) with Ta, Hf and Ir used as capping layer materials. Spin-resolved conductance and TMR ratios are shown and it is found that the TMR ratio is sensitive to the capping layer material. The spin polarization of s state in Co atom at the CoFe/capping layer interface is presented to explain the influence on TMR ratio caused by different capping layers, and we can obtain a high spin polarization value and a giant TMR ratio when Ir is used, demonstrating that Ir is an ideal capping layer material. We also study the spin-polarized transport properties in the Brillouin zone. In the parallel condition, a central broad peak is found in the majority-spin channel due to the {\\Delta}1 state, while sharp transmission probability peaks at some k||-points appear in the minority-spin channel. The sharp peak phenomenon is at...

  7. Electric-field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature

    Science.gov (United States)

    Chen, Aitian; Li, Peisen; Li, Dalai; Zhao, Yonggang; Zhang, Sen; Yang, Lifeng; Liu, Yan; Zhu, Meihong; Zhang, Huiyun; Han, Xiufeng

    2015-03-01

    Recent studies on the electric-field control of tunneling magnetoresistance (TMR) have attracted considerable attention for low power consumption. So far two methods have been demonstrated for electric-field control of TMR. One method uses ferroelectric or multiferroic barriers, which is limited by low temperature. The other is nanoscale thin film magnetic tunnel junction (MTJ), but the assistance of a magnetic field is required. Therefore, electric-field control of TMR at room temperature without a magnetic field is highly desired. One promising way is to employ strain-mediated coupling in ferromagnetic/piezoelectric structure. Though MTJs/piezoelectric has been predicted by theory, experiment work is still lacking. We deposited CoFeB/AlOx/CoFeB on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) ferroelectric single crystal. Under external electric fields, PMN-PT will produce a piezostrain due to piezoelectric effect, and the piezostrain transfers to ferromagnetic film to change the magnetic anisotropy. We demonstrate a reversible, continuous magnetization rotation and manipulation of TMR at room temperature by electric fields without the assistance of a magnetic field.

  8. Tunneling magnetoresistance in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tao, L. L.; Liang, S. H.; Liu, D. P.; Wei, H. X.; Han, X. F., E-mail: xfhan@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, Jian [Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong (China)

    2014-04-28

    We present a theoretical study of the tunneling magnetoresistance (TMR) and spin-polarized transport in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junction (MTJ). It is found that the spin-polarized conductance and bias-dependent TMR ratios are rather sensitive to the structure of Fe{sub 3}Si electrode. From the symmetry analysis of the band structures, we found that there is no spin-polarized Δ{sub 1} symmetry bands crossing the Fermi level for the cubic Fe{sub 3}Si. In contrast, the tetragonal Fe{sub 3}Si driven by in-plane strain reveals half-metal nature in terms of Δ{sub 1} state. The giant TMR ratios are predicted for both MTJs with cubic and tetragonal Fe{sub 3}Si electrodes under zero bias. However, the giant TMR ratio resulting from interface resonant transmission for the former decreases rapidly with the bias. For the latter, the giant TMR ratio can maintain up to larger bias due to coherent transmission through the majority-spin Δ{sub 1} channel.

  9. Scanning Tunnelling Spectroscopy of Vortices with Normal and Superconducting tips

    Science.gov (United States)

    Rodrigo, J. G.; Suderow, H.; Vieira, S.

    Scanning tunnelling microscopy and spectroscopy (STM/S) has proved to be a powerful tool to study superconductivity down to atomic level. Vortex lattice studies require characterizing areas of enough size to contain a large number of vortices. On the other hand, it is necessary to combine this capability with high spectroscopic and microscopic resolution. This is a fundamental aspect to measure and detect the subtle changes appearing inside and around a single vortex. We report in this chapter our approach to the use of STM/S, using normal and superconducting tips, to observe the lattice of vortices in several compounds, and the information acquired inside these fascinating entities. The combination of superconducting tips and scanning tunneling spectroscopy, (ST)2S, presents advantages for the study of superconducting samples. It allows to distinguish relevant features of the sample density of states, which manifest itself as small changes in the Josephson coupling between sample and tip condensates, and it has also shown to be very efficient in the study of the ferromagnetic-superconductor transition in the re-entrant superconductor ErRh4B4.

  10. Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Miwa, Shinji, E-mail: miwa@mp.es.osaka-u.ac.jp; Matsuda, Kensho; Tanaka, Kazuhito; Goto, Minori; Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Kotani, Yoshinori; Nakamura, Tetsuya [Japan Synchrotron Radiation Research Institute/SPring-8, Sayo, Hyogo 679-5198 (Japan)

    2015-10-19

    In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe|MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and magnetic circular dichroism spectroscopy. The Fe|MgO tunnel junctions showed enhanced perpendicular magnetic anisotropy under external negative voltage, which induced charge depletion at the Fe|MgO interface. Despite the application of voltages of opposite polarity, no trace of chemical reaction such as a redox reaction attributed to O{sup 2−} migration was detected in the x-ray absorption spectra of the Fe. The VCMA reported in the Fe|MgO-based magnetic tunnel junctions must therefore originate from phenomena associated with the purely electric effect, that is, surface electron doping and/or redistribution induced by an external electric field.

  11. Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

    Directory of Open Access Journals (Sweden)

    Kai Braun

    2015-05-01

    Full Text Available Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode into the highest occupied orbital of the closest substrate-bound molecule (lower level and radiative recombination with an electron from above the Fermi level (upper level, hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.

  12. Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons.

    Science.gov (United States)

    Braun, Kai; Wang, Xiao; Kern, Andreas M; Adler, Hilmar; Peisert, Heiko; Chassé, Thomas; Zhang, Dai; Meixner, Alfred J

    2015-01-01

    Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode) into the highest occupied orbital of the closest substrate-bound molecule (lower level) and radiative recombination with an electron from above the Fermi level (upper level), hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.

  13. Imaging soft x-ray spectrometers based on superconducting tunnel junctions

    Science.gov (United States)

    Verhoeve, P.; Martin, D. D. E.; Venn, R.

    2010-07-01

    X-ray detectors based on superconducting tunnel junctions (STJs) have demonstrated good energy resolution in the soft X-ray energy range 0.1-6 keV. In particular DROIDS (Distributed Read Out Imaging Devices), consisting of a superconducting absorber strip with superconducting tunnel junctions as read-out devices on either end, could combine this high resolving power with a large sensitive area and good soft X-ray detection efficiency. In this paper we present results on the spectroscopic performance of Al and Ta/Al DROIDs with different absorber materials (Ta, Re) and with variations in absorber configurations: our standard absorber integrated with the read-out structure is compared with absorbers deposited after definition of the read-out structure. The latter allows maximising the detection efficiency through thicker layers and different absorber materials. Also, absorbers which are electrically coupled to the readout structure are compared to insulated absorbers which couple to the readout structure by phonon exchange across a thin dielectric layer. New process routes have been designed for all new configurations. Whilst not all these structures have been fabricated successfully yet, our integrated absorber sofar exhibits the best performance, with 2.45 eV FWHM at 400 eV and 16.6 eV FWHM at 5.9 keV.

  14. FeGa/MgO/Fe/GaAs(001) magnetic tunnel junction: Growth and magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14-km 163.5, Area Science Park, 34012 Trieste (Italy); Ciprian, R.; Salles, B.R.; Krizmancic, D. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Panaccione, G. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universites, UPMC Univ Paris 06, UMR 7588, INSP, 4 place Jussieu, 75005 Paris (France); CNRS, UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris (France); Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy)

    2015-06-01

    Research on spintronics and on multiferroics leads now to the possibility of combining the properties of these materials in order to develop new functional devices. Here we report the integration of a layer of magnetostrictive material into a magnetic tunnel junction. A FeGa/MgO/Fe heterostructure has been grown on a GaAs(001) substrate by molecular beam epitaxy (MBE) and studied by X-ray magnetic circular dichroism (XMCD). The comparison between magneto optical Kerr effect (MOKE) measurements and hysteresis performed in total electron yield allowed distinguishing the ferromagnetic hysteresis loop of the FeGa top layer from that of the Fe buried layer, evidencing a different switching field of the two layers. This observation indicates an absence of magnetic coupling between the two ferromagnetic layers despite the thickness of the MgO barrier of only 2.5 nm. The in-plane magnetic anisotropy has also been investigated. Overall results show the good quality of the heterostructure and the general feasibility of such a device using magnetostrictive materials in magnetic tunnel junction.

  15. Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions.

    Science.gov (United States)

    Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X G; Wang, C; Kohn, A; Ma, Q L; Zhang, Jia; Liu, H F; Han, X F

    2012-02-01

    Following predictions by first-principles theory of a huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratios of about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, a MR ratio of about 600% has been reported at RT in MgO-based MTJs prepared by magnetron sputtering, using amorphous CoFeB as the ferromagnetic electrode. These MTJs show great potential for application in spintronic devices. Fully epitaxial MTJs are excellent model systems that enhance our understanding of the spin-dependent tunneling process as the interface is well defined and can be fully characterized. Both theoretical calculations and experimental results clearly indicate that the interfacial structure plays a crucial role in the coherent tunneling across a single crystal MgO barrier, especially in epitaxial MgO-based MTJs grown by molecular beam epitaxy (MBE). Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism techniques have been reported previously for interface characterization. However, no consistent viewpoint has been reached on the interfacial structures (such as FeO layer formation at the bottom Fe/MgO interface), and it is still an open issue. In this article, our recent studies on the interface characterization of MgO-based epitaxial MTJs by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin-dependent tunneling spectroscopy, will be presented.

  16. Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2011-10-01

    Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

  17. Antenna-Coupled Superconducting Tunnel Junctions with Single-Electron Transistor Readout for Detection of Sub-mm Radiation

    Science.gov (United States)

    Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Wollack, E. J.; Schoelkopf, R. J.; Teufel, J.; Krebs, Carolyn (Technical Monitor)

    2002-01-01

    Antenna-coupled superconducting tunnel junction detectors have the potential for photon-counting sensitivity at sub-mm wavelengths. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

  18. Inelastic electron tunneling spectroscopy of CoFeB/ MgO/ CoFeB based magnetic tunnel junctions in high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Walter, Marvin; Zbarskyy, Vladyslav; Muenzenberg, Markus [I. Phys. Inst., Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany); Seibt, Michael [IV. Phys. Inst., Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany); Drewello, Volker; Schaefers, Markus; Reiss, Guenter; Thomas, Andy [Bielefeld University, Physics Department, 33501 Bielefeld (Germany)

    2010-07-01

    Magnetic tunnel junctions (MTJs) showing a high tunnel magnetoresistance (TMR) are important for the fabrication of MRAM devices when combined with current induced switching. We discuss inelastic electron tunneling spectroscopy (IETS) measurements on CoFeB/MgO/CoFeB magnetic tunnel junctions. The junctions are prepared by means of magnetron sputtering of CoFeB and e-beam evaporation of stoichiometric MgO. Structuring of the multilayer is done using a photolithography process and Argon ion-milling. The IETS measurements are carried out at low temperatures down to 4.2 K, high magnetic fields up to 9 T and in parallel as well as antiparallel electrode configuration in order to distinguish between different kind of excitations such as e.g. magnons and phonons. Furthermore, oxygen vacancies in the MgO barrier are controlled through variation of the sample temperature during e-beam growth to investigate the influences of these vacancies on the tunneling spectra of MTJs.

  19. Coherence effects in S/I/N/I/FS tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Li Xiao-Wei

    2007-01-01

    The dc Josephson effect in superconductor/insulator/normal metal/insulator/ferromagnetic superconductor junctions has been studied. We calculate the dc Josephson current based on the Bogoliubov de Gennes equation. The Josephson current is derived as a function of exchange field in ferromagnetic superconductor, normal metal thickness and insulating barrier strength. It is found that there exists an oscillation relation between the critical Josephson current and the normal metal thickness. The oscillation amplitude decreases as the thickness of the normal metal increases or the exchange field augments.

  20. Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

    Science.gov (United States)

    Hunt, Brian D. (Inventor); Leduc, Henry G. (Inventor)

    1992-01-01

    A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

  1. Charge transport in the normal metal/diffusive ferromagnet/s-wave superconductor junctions

    NARCIS (Netherlands)

    Yokoyama, Takehito; Tanaka, Yukio; Golubov, Alexander; Inoue, Jun-ichiro; Asano, Yasuhiro

    2005-01-01

    Charge transport in the normal metal/insulator/diffusive ferromagnet/insulator/s-wave superconductor (N/I/DF/I/S) junctions is studied for various situations solving the Usadel equation under the Nazarov's generalized boundary condition. Conductance of the junction is calculated by changing the magn

  2. Electronic transport through EuO spin-filter tunnel junctions

    KAUST Repository

    Jutong, Nuttachai

    2012-11-12

    Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.

  3. Theory of Macroscopic Quantum Tunneling in High-T_c c-Axis Josephson Junctions

    CERN Document Server

    Yokoyama, Takehito; Kato, Takeo; Tanaka, Yukio

    2007-01-01

    We study macroscopic quantum tunneling (MQT) in c-axis twist Josephson junctions made of high-T_c superconductors in order to clarify the influence of the anisotropic order parameter symmetry (OPS) on MQT. The dependence of the MQT rate on the twist angle $\\gamma$ about the c-axis is calculated by using the functional integral and the bounce method. Due to the d-wave OPS, the $\\gamma$ dependence of standard deviation of the switching current distribution and the crossover temperature from thermal activation to MQT are found to be given by $\\cos2\\gamma$ and $\\sqrt{\\cos2\\gamma}$, respectively. We also show that a dissipative effect resulting from the nodal quasiparticle excitation on MQT is negligibly small, which is consistent with recent MQT experiments using Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8 + \\delta}$ intrinsic junctions. These results indicate that MQT in c-axis twist junctions becomes a useful experimental tool for testing the OPS of high-T_c materials at low temperature, and suggest high potential of suc...

  4. Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

    Science.gov (United States)

    Cagliani, A.; Kjær, D.; Østerberg, F. W.; Hansen, O.; Nielsen, P. F.; Petersen, D. H.

    2017-02-01

    The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R&D phase to the pilot production phase. This will require an improvement in the repeatability of the CIPT metrology technique. Here, we present an analytical model that can be used to simulate numerically the repeatability of a CIPT measurement for an arbitrary MTJ stack prior to any CIPT measurement. The model describes mathematically the main sources of error arising when a micro multi-electrode probe is used to perform a CIPT measurement. The numerically simulated repeatability values obtained on four different MTJ stacks are verified by experimental data and the model is used to optimize the choice of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification.

  5. Vortex domain structures and dc current dependence of magneto-resistances in magnetic tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Wei Hong-Xiang; Lu Qing-Feng; Zhao Su-Fen; Zhang Xie-Qun; Feng Jia-Feng; Han Xiu-Feng

    2004-01-01

    Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni7gFe21 (25nm)/Ir22Mn78 (12nm)/Co75Fe25 (4nm)/Al(0.8nm) oxide/Co75Fe25(4nm)/Ni7gFe21 (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large dc current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing.

  6. Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces

    Science.gov (United States)

    Ngo, Thach D. N.; Chang, Jung-Won; Lee, Kyujoon; Han, Seungju; Lee, Joon Sung; Kim, Young Heon; Jung, Myung-Hwa; Doh, Yong-Joo; Choi, Mahn-Soo; Song, Jonghyun; Kim, Jinhee

    2015-08-01

    Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 and SrTiO3. However, the manipulation of the spin degree of freedom at the LaAlO3/SrTiO3 heterointerface has remained elusive. Here, we have fabricated hybrid magnetic tunnel junctions consisting of Co and LaAlO3/SrTiO3 ferromagnets with the insertion of a Ti layer in between, which clearly exhibit magnetic switching and the tunnelling magnetoresistance effect below 10 K. The magnitude and sign of the tunnelling magnetoresistance are strongly dependent on the direction of the rotational magnetic field parallel to the LaAlO3/SrTiO3 plane, which is attributed to a strong Rashba-type spin-orbit coupling in the LaAlO3/SrTiO3 heterostructure. Our study provides a further support for the existence of the macroscopic ferromagnetism at LaAlO3/SrTiO3 heterointerfaces and opens a novel route to realize interfacial spintronics devices.

  7. Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes.

    Science.gov (United States)

    Wang, Liancheng; Cheng, Yan; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong

    2016-01-20

    Graphene transparent conductive electrode (TCE) applications in nitride light emitting diodes (LEDs) are still limited by the large contact resistance and interface barrier between graphene and p-GaN. We propose a hybrid tunnel junction (TJ)-graphene TCE approach for nitride lateral LEDs theoretically and experimentally. Through simulation using commercial advanced physical models of semiconductor devices (APSYS), we found that low tunnel resistance can be achieved in the n(+)-GaN/u-InGaN/p(+)-GaN TJ, which has a lower tunneling barrier and an enhanced electric field due to the polarization effect. Graphene TCEs and hybrid graphene-TJ TCEs are then modeled. The designed hybrid TJ-graphene TCEs show sufficient current diffusion length (Ls), low introduced series resistance, and high transmittance. The assembled TJ LED with the triple-layer graphene (TLG) TCEs show comparable optoelectrical performance (3.99 V@20 mA, LOP = 10.8 mW) with the reference LED with ITO TCEs (3.36 V@20 mA, LOP = 12.6 mW). The experimental results further prove that the TJ-graphene structure can be successfully incorporated as TCEs for lateral nitride LEDs.

  8. A physics-based compact model of ferroelectric tunnel junction for memory and logic design

    Science.gov (United States)

    Wang, Zhaohao; Zhao, Weisheng; Kang, Wang; Bouchenak-Khelladi, Anes; Zhang, Yue; Zhang, Youguang; Klein, Jacques-Olivier; Ravelosona, Dafiné; Chappert, Claude

    2014-01-01

    Ferroelectric tunnel junction (FTJ) is able to store non-volatile data in the spontaneous polarization direction of ferroelectric tunnel barrier. Recent progress has demonstrated its great potential to build up the next generation non-volatile memory and logic (NVM and NVL) thanks to the high OFF/ON resistance ratio, fast operation speed, low write power, non-destructive readout and so on. In this paper, we present the first physics-based compact model for Co/BTO/LSMO FTJ nanopillar, which was reported experimentally to exhibit excellent NVM performance. This model integrates related physical models of tunnel resistance, static switching voltage and dynamic switching delay. Its accuracy is shown by the good agreement between numerical model simulation and experimental measurements. This compact model has been developed in Verilog-A language and validated by single-cell simulation on Cadence Virtuoso Platform. Hybrid simulations based on 40 nm-technology node of FTJ memory arrays and non-volatile full adder were performed to demonstrate the efficiency of our compact model for the simulation and analysis of CMOS/FTJ integrated circuits.

  9. Strength of the symmetry spin-filtering effect in magnetic tunnel junctions

    Science.gov (United States)

    Faleev, Sergey V.; Mryasov, Oleg N.; Parkin, Stuart S. P.

    2016-11-01

    We developed a general theory that allows us to predict the power factor n in the asymptotics of the tunneling magnetoresistance (TMR), TMR∝Nn , in the limit of large number of the tunnel barrier layers, N , for a magnetic tunnel junction (MTJ) system that has the so-called symmetry spin-filtering properties. Within this theory the only information required to determine n is the knowledge of the symmetries of the wave functions of the bulk electrode and barrier materials at the Γ point in the in-plane surface Brillouin zone. In particular, we show that for a MTJ that has the in-plane square symmetry only three values for the power factor are allowed: n =0 ,1 , and 2 for the asymptotics of the TMR enhanced due to the symmetry spin-filtering mechanism. To verify our theory we performed the density functional theory calculations of transmission functions and TMR for a Fe/MgO/Fe MTJ which confirm predicted values of the power factor n =0 ,1 , or 2 in specific ranges of energies (in particular, n =1 at the Fermi energy).

  10. MoRe-based and MgB{sub 2} -based tunnel junctions and their characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Shaternik, V; Noskov, V; Chubatyy, V [Kurdyumov Institute for Metal Physics of National Academy of Sciences of Ukraine, Vernadskii boulevard 36, 02142 Kiev (Ukraine); Larkin, S [Concern ' Nauka' , Dovnar-Zapol' skii street 2/20, 03116 Kiev (Ukraine); Belogolovskii, M, E-mail: shaternik@mail.r [Donetsk Institute for Physics and Engineering, National Academy of Sciences of Ukraine, 83114 Donetsk (Ukraine)

    2010-06-01

    Perspective Josephson Mo-Re alloy-oxide-Pb, MgB{sub 2}- oxide - Mo-Re alloy and Mo-Re alloy-normal metal-oxide- normal metal-Mo-Re alloy junctions have been fabricated and investigated. Thin ({approx}50-100 nm) MoRe superconducting films are deposited on Al{sub 2}O{sub 3} substrates by using a dc magnetron sputtering of MoRe target. Thin ({approx}50-100 nm) MgB{sub 2} superconducting films are deposited on Al{sub 2}O{sub 3} substrates by using e-beam evaporation of boron and thermal coevaporation of magnesium. To investigate a transparency spread for the fabricated junctions barriers the computer simulation of the measured quasiparticle I-V curves have been done in framework of the model of multiple Andreev reflections in double-barrier junction interfaces. It's demonstrated the investigated junctions can be described as highly asymmetric double-barrier Josephson junctions with great difference between the two barrier transparencies. Results of computer simulation of quasiparticles I-V curves of junctions are presented and discussed. The I{sub C}(T) characteristics, measured for Josephson heterostructures with different thickness of metal layer s and exposure dose E, essentially deviate from an Ambegaokar- Baratoff (A and B) I{sub C}(T) behavior and Kulik-Omelianchuck (K and O) curves, because of proximity effect caused by the comparatively high value of s (up to 100 nm).

  11. Model for the fine structure of zero field steps in long Josephson tunnel junctions and its comparison with experiment

    DEFF Research Database (Denmark)

    Barbara, Paola; Monaco, R.; Ustinov, A. V.

    1996-01-01

    The single fluxon dynamics in the resonant regime has been investigated on high-quality low-loss Nb/Al–AlOx/Nb window Josephson tunnel junctions. A new model accounting for the fine structure of zero field steps in linear junctions is proposed. Depending on the fluxon velocity and on the junction...... simulations, and experiments. The presence of the idle region has been proved to play a determinant role for the occurrence of the fine structure. ©1996 American Institute of Physics....

  12. The Wiedemann-Franz law in a normal metal-superconductor junction

    Institute of Scientific and Technical Information of China (English)

    R Ghanbari; G Rashedi

    2011-01-01

    In this paper the influence of superconducting correlations on the thermal and charge conductances in a normal metal-superconductor (NS) junction in the clean limit is studied theoretically.First we solve the quasiclassical Eilenberger equations,and using the obtained density of states we can acquire the thermal and electrical conductances for the NS junction.Then we compare the conductance in a normal region of an NS junction with that in a single layer of normal metal (N).Moreover,we study the Wiedemann-Franz (WF) law for these two cases (N and NS).From our calculations we conclude that the behaviour of the NS junction does not conform to the WF law for all temperatures.The effect of the thickness of normal metal on the thermal conductivity is also theoretically investigated in the paper.

  13. Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes.

    Science.gov (United States)

    Martin, Marie-Blandine; Dlubak, Bruno; Weatherup, Robert S; Yang, Heejun; Deranlot, Cyrile; Bouzehouane, Karim; Petroff, Frédéric; Anane, Abdelmadjid; Hofmann, Stephan; Robertson, John; Fert, Albert; Seneor, Pierre

    2014-08-26

    We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.

  14. Effect of interfacial structures on spin dependent tunneling in epitaxial L1{sub 0}-FePt/MgO/FePt perpendicular magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.; Li, D. L.; Wang, S. G., E-mail: Sgwang@iphy.ac.cn; Ma, Q. L.; Liang, S. H.; Wei, H. X.; Han, X. F. [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Hesjedal, T.; Ward, R. C. C. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kohn, A.; Elkayam, A.; Tal, N. [Department of Materials Engineering and the Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Zhang, X.-G. [Department of Physics and Quantum Theory Project, University of Florida, Gainesville, Florida 32611 (United States); Center for Nanophase Materials Sciences and Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6493 (United States)

    2015-02-28

    Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1{sub 0}-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.

  15. The role of engineered materials in superconducting tunnel junction X-ray detectors - Suppression of quasiparticle recombination losses via a phononic band gap

    Science.gov (United States)

    Rippert, Edward D.; Ketterson, John B.; Chen, Jun; Song, Shenian; Lomatch, Susanne; Maglic, Stevan R.; Thomas, Christopher; Cheida, M. A.; Ulmer, Melville P.

    1992-01-01

    An engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasi-particles. Attention is given to a 1D Kronig-Penny model for phonons normally incident to the layers of a multilayered superconducting tunnel junction as an idealized example. A device with a high density of Bragg resonances is identified as desirable; both Nb/Si and NbN/SiN superlattices have been produced, with the latter having generally superior performance.

  16. Self-assembled monolayers of terminal acetylenes as replacements for thiols in bottom-up tunneling junctions

    NARCIS (Netherlands)

    Fracasso, Davide; Kumar, Sumit; Rudolf, Petra; Chiechi, Ryan C.

    2014-01-01

    Why use thiols in Molecular Electronics? They stink, oxidize readily, poison catalysts, and often require nontrivial protection/deprotection chemistry. In this communication we demonstrate the fabrication of tunneling junctions formed by contact of self-assembled monolayers (SAMs) of terminal alkyne

  17. 600 GHz resonant mode in a parallel array of Josephson tunnel junctions connected by superconducting microstrip lines

    DEFF Research Database (Denmark)

    Kaplunenko, V. K.; Larsen, Britt Hvolbæk; Mygind, Jesper;

    1994-01-01

    The high frequency properties of the one-dimensional transmission line consisting of a parallel array of resistively shunted Josephson tunnel junctions have been studied in the limit of relatively low damping where this nonlinear system exhibits new and interesting phenomena. Here we report...

  18. Field-induced inversion of resonant tunneling currents through single molecule junctions and the directional photo-electric effect

    Science.gov (United States)

    Kuperman, Maayan; Peskin, Uri

    2017-03-01

    It has been known for several decades that the electric current through tunneling junctions is affected by irradiation. In particular, photon-assisted currents by asymmetric irradiation of the two leads was demonstrated and studied extensively in tunneling junctions of different compositions and for different radiation wavelengths. In this work, this phenomenon is revisited in the context of single molecule junctions. Restricting the theoretical discussion to adiabatic periodic driving of one lead with respect to the other within a non-interacting electron formulation, the main features of specific molecules are encoded in the discrete electronic energy levels. The detailed level structure of the molecule is shown to yield new effects in the presence of asymmetric driving of the leads. In particular, when the field-free tunneling process is dominated by a single electronic level, the electric current can be suppressed to zero or flow against the direction of an applied static bias. In the presence of a second electronic level, a directional photo-electric effect is predicted, where not only the magnitude but also the direction of the steady state electric current through the tunneling junction can be changed by a monotonous increase of the field intensity. These effects are analyzed and explained by outlying the relevant theory, using analytic expressions in the wide-band limit, as well as numerical simulations beyond this limit.

  19. Quantum spin transport and dynamics through a ferromagnetic/normal metal junction

    Science.gov (United States)

    Li, Hua; Bedell, Kevin S.

    2015-12-01

    We study the spin transport in the low-temperature regime (often referred to as the precession-dominated regime) between a ferromagnetic Fermi liquid (FFL) and a normal metal metallic Fermi liquid (NFL), also known as the F/N junction, which is considered as one of the most basic spintronic devices. In particular, we explore the propagation of spin waves and transport of magnetization through the interface of the F/N junction where nonequilibrium spin polarization is created on the normal metal side of the junction by electrical spin injection. We calculate the probable spin wave modes in the precession-dominated regime on both sides of the junction especially on the NFL side where the system is out of equilibrium. Proper boundary conditions at the interface are introduced to establish the transport of the spin properties through the F/N junction. A possible transmission conduction electron spin resonance (CESR) experiment is suggested on the F/N junction to see if the predicted spin wave modes could indeed propagate through the junction. Potential applications based on this novel spin transport feature of the F/N junction are proposed in the end.

  20. Observation of thermal spin-transfer torque via ferromagnetic resonance in magnetic tunnel junctions

    Science.gov (United States)

    Zhang, Zhaohui; Bai, Lihui; Chen, Xiaobin; Guo, Hong; Fan, X. L.; Xue, D. S.; Houssameddine, D.; Hu, C.-M.

    2016-08-01

    The thermal spin-transfer torque (TSTT) in magnetic tunneling junctions (MTJs) was systematically studied using electrical detection of ferromagnetic resonance (FMR). Evidence for the existence of TSTT in MTJs is observed. A temperature difference was applied across an MTJ acting as a TSTT on the free layer of the MTJ. The FMR of the free layer was then excited by a microwave current and electrically detected as a dc voltage. We found that the FMR line shape was changed by the TSTT, indicated by the ratio of dispersive and Lorentz components of the FMR spectra (D /L ). D /L increases by increasing the temperature difference. In addition, we analyze the magnetization orientation dependence of TSTT and provide solid evidence that this dependence differs from the magnetization orientation dependence of spin-transfer torque driven by a dc bias.

  1. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

    Science.gov (United States)

    Gottwald, M.; Kan, J. J.; Lee, K.; Zhu, X.; Park, C.; Kang, S. H.

    2015-01-01

    Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

  2. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Clément, P.-Y.; Baraduc, C., E-mail: claire.baraduc@cea.fr; Chshiev, M.; Diény, B. [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, INAC-SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Ducruet, C. [Crocus-Technology, 5, Place Robert Schuman, F-38054 Grenoble (France); Vila, L. [Univ. Grenoble Alpes, INAC-SP2M, F-38000 Grenoble, France and CEA, INAC-SP2M, F-38000 Grenoble (France)

    2015-09-07

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  3. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Science.gov (United States)

    Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.

    2015-09-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  4. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

    Energy Technology Data Exchange (ETDEWEB)

    Gottwald, M. [QUALCOMM Europe Incorporated, Kapeldreef 75, 3001 Heverlee (Belgium); Kan, J. J.; Lee, K.; Zhu, X.; Park, C.; Kang, S. H. [Corporate Research and Development, Qualcomm Technologies Incorporated, San Diego, California 92121-1714 (United States)

    2015-01-19

    Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

  5. Giant electrocaloric effect in asymmetric ferroelectric tunnel junctions at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang, E-mail: liuyangphy52@gmail.com; Infante, Ingrid C.; Dkhil, Brahim, E-mail: brahim.dkhil@ecp.fr [Laboratoire Structures, Propriétés et Modélisation des Solides, UMR 8580 CNRS-Ecole Centrale Paris, Grande Voie des Vignes, Châtenay-Malabry Cedex 92295 (France); Lou, Xiaojie [Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology, and State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)

    2014-02-24

    Room-temperature electrocaloric properties of Pt/BaTiO{sub 3}/SrRuO{sub 3} ferroelectric tunnel junctions (FTJs) are studied by using a multiscale thermodynamic model. It is found that there is a divergence in the adiabatic temperature change ΔT for the two opposite polarization orientations. This difference under a typical writing voltage of 3 V can reach over 1 K as the barrier thickness decreases. Thanks to the ultrahigh external stimulus, a giant electrocaloric effect (1.53 K/V) with ΔT being over 4.5 K can be achieved at room temperature, which demonstrates the perspective of FTJs as a promising solid-state refrigeration.

  6. Magneto Seebeck effect in Co-Fe-B/MgO/Co-Fe-B tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Walter, Marvin; Walowski, Jakob; Zbarsky, Vladyslav; Muenzenberg, Markus [I. Physikalisches Institut, Universitaet Goettingen (Germany); Drewello, Volker; Ebke, Daniel; Reiss, Guenter; Thomas, Andy [Department of Physics, Bielefeld University (Germany); Peretzki, Patrick; Seibt, Michael [IV. Physikalisches Institut, Universitaet Goettingen (Germany); Czerner, Michael; Bachmann, Michael; Heiliger, Christian [I. Physikalisches Institut, Universitaet Giessen (Germany)

    2011-07-01

    Co-Fe-B/MgO/Co-Fe-B devices showing a giant TMR effect are possible candidates for the generation of spin-currents by thermal heating. We present the observation of a magneto Seebeck effect in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions (MTJs). The effects could be used for thermal spin-injection and thermally driven spin-transfer torque. The samples presented in this work consist of a minimal pseudo-spin-valve stack with sputtered Ta and Co-Fe-B layers and an e-beam evaporated MgO barrier. The MTJs are heated by a diode laser which achieves powers of up to 100 mW and is focused onto the sample in a standard confocal microscope setup. The heating is simulated by finite element methods and the experimental results are compared with ab initio calculations of the magneto-thermoelectric power and of the spin-Seebeck coefficient.

  7. Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Y.; Lin, W.; Petit-Watelot, S.; Hehn, M.; Rinnert, H.; Lu, Y.; Montaigne, F.; Lacour, D.; Andrieu, S.; Mangin, S., E-mail: stephane.mangin@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine- BP 70239, F-54506 Vandoeuvre-lès-Nancy Cedex (France)

    2016-01-14

    Recently, the study of interactions between electron spins and heat currents has given rise to the field of “Spin Caloritronics”. Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.

  8. Short-Term Plasticity and Long-Term Potentiation in Magnetic Tunnel Junctions: Towards Volatile Synapses

    Science.gov (United States)

    Sengupta, Abhronil; Roy, Kaushik

    2016-02-01

    Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally nonvolatile long-term plasticity changes are implemented in nanoelectronic synapses for neuromorphic applications, recent studies in neuroscience reveal that biological synapses undergo metastable volatile strengthening followed by a long-term strengthening provided that the frequency of the input stimulus is sufficiently high. Such "memory strengthening" and "memory decay" functionalities can potentially lead to adaptive neuromorphic architectures. In this paper, we demonstrate the close resemblance of the magnetization dynamics of a magnetic tunnel junction (MTJ) to short-term plasticity and long-term potentiation observed in biological synapses. We illustrate that, in addition to the magnitude and duration of the input stimulus, the frequency of the stimulus plays a critical role in determining long-term potentiation of the MTJ. Such MTJ synaptic memory arrays can be utilized to create compact, ultrafast, and low-power intelligent neural systems.

  9. Fabrication of superconducting tunnel junctions with embedded coil for applying magnetic field

    Science.gov (United States)

    Yamaguchi, Kenji; Nakagawa, Hiroshi; Aoyagi, Masahiro; Naruse, Masato; Myoren, Hiroaki; Taino, Tohru

    2016-11-01

    We have proposed and demonstrated a superconducting tunnel junction (STJ) with an embedded coil for applying a magnetic field. The STJ was fabricated on the coil, which was embedded in a Si substrate. The coil in the Si substrate consists of superconducting microstrip lines and applies a magnetic field to the STJ to suppress the dc Josephson current. The embedded coil was designed with a line and space of 3 μm and a thickness of 120 nm. To planarize the coil, we employed chemical mechanical polishing (CMP) in our fabrication process. In this STJ, the maximum current of the embedded coil was 28 mA, which corresponded to the maximum magnetic field of 11.76 mT.

  10. Bias dependence of the response of superconducting tunnel junctions used as photon detectors

    CERN Document Server

    Poelaert, A; Peacock, A; Kozorezov, A; Wigmore, J K

    2000-01-01

    In the last decade, several research groups have developed superconducting tunnel junctions (STJ) for photon detection in astronomy. Despite extensive studies, the behavior of multi-layered devices, subject to the superconducting proximity effect (proximized devices), has remained difficult to model. Recently, a new model has been presented, leading to a more realistic approach for the photon detection within an STJ. This model is based on the existence of local traps in the superconducting electrodes of the STJ. In this paper, we show that the new model is successful in predicting the bias dependence of the response of an STJ. The bias dependence also demonstrates that the quasiparticles, i.e. the charge carriers created as a result of the photon absorption process, cannot relax down to the superconducting energy gap. This result is important, since most theoretical developments to date (implicitly) assume that quasiparticle relax to the gap energy. crystal-structure; energy-levels; tantalum-; traps cooper-p...

  11. Analytical solution of the Boltzmann-Poisson equation and its application to MIS tunneling junctions

    Institute of Scientific and Technical Information of China (English)

    Zhang Li-Zhi; Wang Zheng-Chuan

    2009-01-01

    In order to consider quantum transport under the influence of an electron-electron (e-e) interaction in a mesoscopic conductor, the Boltzmann equation and Poisson equation are investigated jointly. The analytical expressions of the distribution function for the Boltzmann equation and the self-consistent average potential concerned with e-e interaction are obtained, and the dielectric function appearing in the self-consistent average potential is naturally generalized beyond the Thomas-Fermi approximation. Then we apply these results to the tunneling junctions of a metal-insulatorsemiconductor (MIS) in which the electrons are accumulated near the interface of the semiconductor, and we find that the e-e interaction plays an important role in the transport procedure of this system. The electronic density, electric current as well as screening Coulombic potential in this case are studied, and we reveal the time and position dependence of these physical quantities explicitly affected by the e-e interaction.

  12. Huge spin-transfer torque in a magnetic tunnel junction by a superlattice barrier

    Science.gov (United States)

    Chen, C. H.; Tseng, P.; Ko, C. W.; Hsueh, W. J.

    2017-09-01

    Huge spin-transfer torque (STT) in a magnetic tunnel junction (MTJ) achieved by superlattice barrier composed of alternate layers of a nonmagnetic metal and an insulator is proposed. The magnitude of the STT depends on the number of cells in the superlattice barrier and the nonmagnetic metal layer's thickness. The result shows that the STT of the novel superlattice-barrier MTJ can reach values up to four orders of magnitude greater than those of traditional single-barrier stacks based on three cells superlattice by designing the nonmagnetic metal layer's thickness. In addition, the spin-transfer torque of the proposed MTJ can also be thousands of magnitude greater than those of traditional double-barrier MTJs.

  13. High energy high resolution photoemission from Heusler compounds in half tunnelling-junctions

    Energy Technology Data Exchange (ETDEWEB)

    Gloskovskii, Andrei; Balke, Benjamin; Ouardi, Siham; Fecher, Gerhard H.; Felser, Claudia [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg - University, Mainz (Germany); Yamamoto, Masafumi [Graduate School of Informatic Science and Technology, Hokkaido University, Sapporo (Japan)

    2008-07-01

    This work reports on high resolution photoelectron spectroscopy from the valence band of buried Co{sub 2}MnSi thin films excited by photons of about 5.9 keV energy. The measurements were performed on Co{sub 2}MnSi thin films covered by MgO(z)/AlO{sub x}(1 nm) with different thickness z from 2 nm to 20 nm of the MgO interlayer. The film structure corresponds to half a tunnelling magnetoresistive (TMR) junction. It is shown that the high energy spectra reveal the bulk electronic structure of the Heusler compound close to the Fermi energy even through the MgO layer. The high resolution measurements of the valence band close to the Fermi energy indicate a very large electron mean free path of the electrons through the MgO layer. The spectra of the buried thin films agree well with previous measurements from bulk samples.

  14. Novel handheld magnetometer probe based on magnetic tunnelling junction sensors for intraoperative sentinel lymph node identification.

    Science.gov (United States)

    Cousins, A; Balalis, G L; Thompson, S K; Forero Morales, D; Mohtar, A; Wedding, A B; Thierry, B

    2015-06-03

    Using magnetic tunnelling junction sensors, a novel magnetometer probe for the identification of the sentinel lymph node using magnetic tracers was developed. Probe performance was characterised in vitro and validated in a preclinical swine model. Compared to conventional gamma probes, the magnetometer probe showed excellent spatial resolution of 4.0 mm, and the potential to detect as few as 5 μg of magnetic tracer. Due to the high sensitivity of the magnetometer, all first-tier nodes were identified in the preclinical experiments, and there were no instances of false positive or false negative detection. Furthermore, these preliminary data encourage the application of the magnetometer probe for use in more complex lymphatic environments, such as in gastrointestinal cancers, where the sentinel node is often in close proximity to other non-sentinel nodes, and high spatial resolution detection is required.

  15. Magnetic tunnel junction design margin exploration for self-reference sensing scheme.

    Science.gov (United States)

    Sun, Z; Li, H; Wang, X

    2012-04-01

    This work investigates the magnetic tunnel junction (MTJ) design requirements for the application of nondestructive self-reference sensing scheme, a novel sensing scheme featuring high tolerance of process variations, fast sensing speed, and no impact on device reliability. Unlike the conventional sensing scheme that requires a large TMR ratio and the uniform antiparallel and parallel resistances for MTJs, the nondestructive self-reference sensing scheme is more sensitive to the roll-off slope of MTJ's R-I or R-V curve. Our purpose is to provide a guidance to facilitate MTJ design used in the nondestructive self-reference scheme. In this work, we comprehensively investigate and analyze the design matrix by considering MTJ device physical properties, such as bias voltage dependent conductance, spin torque, etc. The manuscript suggests the approaches to optimize MTJ design for better trade-off between device properties and circuit design.

  16. Multiple tunnel junctions based nanowire photodetector model for single charge detection

    Science.gov (United States)

    Chatbouri, Samir; Touati, A.; Troudi, M.; Sghaier, N.; Kalboussi, A.

    2013-07-01

    In this paper we propose a new silicon nanowire photodetector model based on a single-electron transistor for single charge detection (photo-NWSET). In the first part of this work we present the two blocks of the device structure (reading and detection blocks). The presented model is consisting of two blocks capacitively coupled. The first SET (SET1) is supposed to read the charge whereas the detection block is represented by the nanowire (NW) system associated to an optical source. We modeled the NW by a series of seven islands separated by eight tunnel junctions (8TJs). In the second part of this work, we investigate the effects of photoexcitation on Id-Vg curves and we present results obtained on the output (photo-NWSET) characteristics after variation of power illumination and response time.

  17. Confined State and Electronic Transport in an Artificial Graphene-Based Tunnel Junction

    Institute of Scientific and Technical Information of China (English)

    袁建辉; 张建军; 曾奇军; 张俊佩; 成泽

    2011-01-01

    Artificial graphene structures embedded in semiconductors could open novel routes for studies of electron interactions in 1ow-dimensional systems. We propose a way to manipulate the transport properties of massless Dirac fermions in an artificial graphene-based tunnel junction. Velocity-modulation control of electron wave propagation in the different regions can be regarded as velocity barriers. Transmission probability of electron is affected profoundly by this velocity barrier. We find that there is no confinement for Dirac electron as the velocity ratio ζ is less than 1, but when the velocity ratio is larger than 1 the confined state appears in the continuum band. These localized Dirac electrons may lead to the decreasing of transmission probability.

  18. Probing the Influence of Thermal Spin Torque on Magnetic Tunnel Junction Switching

    Science.gov (United States)

    Phung, Timothy; Pushp, Aakash; Rettner, Charles; Hughes, Brian; Yang, See-Hun; Parkin, Stuart

    2013-03-01

    It has been established in the past few years that heat flow within a ferromagnet can induce a spin current and an associated voltage. This so called Spin Seebeck effect, initially reported in ferromagnetic metals, has also been observed in magnetic semiconductors, magnetic insulators as well as in strongly spin orbit coupled systems. An open question has been whether heat induced spin currents can be used in switching a magnetic tunnel junction (MTJ) via thermal spin torque (TST). In order to answer this question, we investigate the MTJ switching with TST induced by sharp temperature gradients on the order of 1-10 K/nm. We will describe our experimental setup and present data that show the various roles that temperature plays on the saturation magnetization of the material and on the induced spin currents that influence MTJ switching.

  19. Superconducting tunnel junction array development for high-resolution energy-dispersive x-ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Barfknecht, A. T.; Cramer, S. P; Frank, M.; Friedrich, S.; Hiller, L. J.; Labov, S. E.; Mears, C. A.; Niderost, B.

    1998-07-01

    Cryogenic energy-dispersive x-ray detectors are being developed because of their superior energy resolution ((less than or equal to) 10 eV FWHM for keV x rays) compared to semiconductor EDS systems. So far, their range of application is limited due to their comparably small size and low count rate. We present data on the development of superconducting tunnel junction (STJ) detector arrays to address both of these issues. A single STJ detector has a resolution around 10 eV below 1 keV and can be operated at count rates of order 10,000 counts/s. We show that the simultaneous operation of several STJ detectors does not diminish their energy resolution significantly, while increasing the detector area and the maximum count rate by a factor given by the total number of independent channels.

  20. Promising X-ray fluorescent tests for superconducting tunnel junction detector

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, Stephan; Robinson, Art

    2001-01-11

    Scientists in the Physical Biosciences Division of the Ernest Orlando Berkeley National Laboratory (Berkeley Lab) studying transition metals in proteins with fluorescence-detected L-edge absorption spectroscopy have found the measurements to be extremely challenging. The difficulty is that the metal centers are present in very dilute concentrations so that their weak fluorescence is often obscured by strong background signals from carbon and oxygen. To solve this problem, the Berkeley group has been working with researchers from the Advanced Detector Group at the Lawrence Livermore National Laboratory on an energy-dispersive superconducting tunnel junction x-ray detector. These devices in principle have the energy resolution needed to reveal the metal signal. The most recent results with the latest version of the detector on Beamline 4.0.1-2 at the Advanced Light Source (ALS) illustrate the promise of the cryogenic detector strategy not only for this application but also for spectroscopy of other types of dilute samples.

  1. Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2011-05-17

    Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

  2. Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

    Science.gov (United States)

    Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

    2014-01-01

    A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJ-based microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

  3. Micromagnetic model for studies on Magnetic Tunnel Junction switching dynamics, including local current density

    Energy Technology Data Exchange (ETDEWEB)

    Frankowski, Marek, E-mail: mfrankow@agh.edu.pl; Czapkiewicz, Maciej; Skowronski, Witold; Stobiecki, Tomasz

    2014-02-15

    We present a model introducing the Landau–Lifshitz–Gilbert equation with a Slonczewski's Spin-Transfer-Torque (STT) component in order to take into account spin polarized current influence on the magnetization dynamics, which was developed as an Object Oriented MicroMagnetic Framework extension. We implement the following computations: magnetoresistance of vertical channels is calculated from the local spin arrangement, local current density is used to calculate the in-plane and perpendicular STT components as well as the Oersted field, which is caused by the vertical current flow. The model allows for an analysis of all listed components separately, therefore, the contribution of each physical phenomenon in dynamic behavior of Magnetic Tunnel Junction (MTJ) magnetization is discussed. The simulated switching voltage is compared with the experimental data measured in MTJ nanopillars.

  4. The need for control of magnetic parameters for energy efficient performance of magnetic tunnel junctions

    Science.gov (United States)

    Farhat, I. A. H.; Gale, E.; Alpha, C.; Isakovic, A. F.

    2017-07-01

    Optimizing energy performance of Magnetic Tunnel Junctions (MTJs) is the key for embedding Spin Transfer Torque-Random Access Memory (STT-RAM) in low power circuits. Due to the complex interdependencies of the parameters and variables of the device operating energy, it is important to analyse parameters with most effective control of MTJ power. The impact of threshold current density, Jco , on the energy and the impact of HK on Jco are studied analytically, following the expressions that stem from Landau-Lifshitz-Gilbert-Slonczewski (LLGS-STT) model. In addition, the impact of other magnetic material parameters, such as Ms , and geometric parameters such as tfree and λ is discussed. Device modelling study was conducted to analyse the impact at the circuit level. Nano-magnetism simulation based on NMAGTM package was conducted to analyse the impact of controlling HK on the switching dynamics of the film.

  5. Very strong antiferromagnetic interlayer exchange coupling with iridium spacer layer for perpendicular magnetic tunnel junctions

    Science.gov (United States)

    Yakushiji, Kay; Sugihara, Atsushi; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji

    2017-02-01

    We systematically studied the interlayer exchange coupling (IEC) in a perpendicular synthetic antiferromagnetically coupled structure having an Ir spacer layer for perpendicular magnetic tunnel junctions (p-MTJs). We found a broader peak in IEC energy density (Jex) versus spacer thickness (tIr) compared with the case of using a Ru spacer. The highest IEC energy density was 2.6 erg/cm2 at a tIr of about 5 nm. The p-MTJ nanopillars had a high magnetoresistance ratio (131%) as well as a high spin-transfer torque (STT) switching efficiency (about 2). An Ir spacer can be used to make a stable reference layer for STT magnetoresistive random access memory.

  6. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    Energy Technology Data Exchange (ETDEWEB)

    Honjo, H., E-mail: hr-honjou@aist.go.jp; Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T. [Green Platform Research Laboratories, NEC Corporation, Tsukuba (Japan); Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N. [Center for Spintronics Integrated Systems, Tohoku University, Sendai (Japan); Ishihara, K. [Smart Energy Research Laboratories, NEC Corporation, Tsukuba (Japan); Ohno, H. [Center for Spintronics Integrated Systems, Tohoku University, Sendai (Japan); Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai (Japan); WPI Advanced Institute for Materials Research, Tohoku University, Sendai (Japan)

    2014-05-07

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

  7. Tunnel Junctions between Metals and Magnetic Perovskites and their use in Spin Polarized Spectroscopy

    Science.gov (United States)

    Mieville, Laurent; Worledge, Daniel; Geballe, Theodore H.; Char, Kookrin

    1998-03-01

    The recently reported "colossal" magnetoresistance (CMR) effect in (La_1-xA_x)MnO3 (where A stands for alkaline earth element) has shed new light on the magnetic properties exhibited by some members of the perovskite family with the generic formula ABO_3. We have studied the interface resistance between metals (Al, Nb and Pd) and magnetic perovskites ((La_0.66Sr_0.34)MnO_3, SrRuO3 and (La_0.5Sr_0.5)CoO_3) thin films grown by pulsed laser deposition. Low temperature measurements of tunnel junctions which aim to measure directly the amount of spin polarized carriers present in these perovskites will be also reviewed.

  8. Nanoscale electroluminescence from n-type GaAs(110) in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Guo, X L; Fujita, D; Niori, N; Keisuke, S; Onishi, K [Advanced Nanocharacterization Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2007-05-16

    Nanoscale electroluminescence (EL) was induced from n-type GaAs(110) in tunnel junctions using an indium tin oxide (ITO)-coated optical fibre probe at both polarities, room temperature (RT), and 80 K. The quantum efficiency of photon emission at negative bias is much higher than at positive bias at both RT and 80 K. A high quantum efficiency of about {approx}10{sup -4}(photons/electron) was achieved at 80 K. The well-defined optical spectra exhibit two-peak features at 1.49 and 1.39 eV which are generated by the radiative recombination of hole-electron pairs over the direct band gap and surface states, respectively.

  9. Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles

    CERN Document Server

    Li, L; Zhou, Y; Pong, P W T

    2016-01-01

    In recent years, it is evidenced that the individuals newly infected HIV are transmitting the virus prior to knowing their HIV status. Identifying individuals that are early in infection with HIV antibody negative (window period) remains problematic. In the newly infected individuals, HIV antigen p24 is usually present in their serum or plasma 7-10 days before the HIV antibody. After antibody production initiates, the p24 antigen is bound into immune complexes. That means the detectable p24 antigens in serum/plasma are short-lived, and their amount is in the pg/ml range. Thus, a rapid quantitative bio-detection system with high-sensitivity is required to achieve early disease diagnosis. Magnetoresistive (MR) biosensor with ultra-high sensitivity possesses great potential in this area. In this study, a p24 detection assay using MgO-based magnetic tunnel junction (MTJ) sensor and 20-nm magnetic nanoparticles is reported.

  10. Electronic band alignment and electron transport in Cr/BaTiO{sub 3}/Pt ferroelectric tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zenkevich, A. [NRNU ' Moscow Engineering Physics Institute,' 115409 Moscow (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region (Russian Federation); Minnekaev, M.; Matveyev, Yu.; Lebedinskii, Yu. [NRNU ' Moscow Engineering Physics Institute,' 115409 Moscow (Russian Federation); Bulakh, K.; Chouprik, A.; Baturin, A. [Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region (Russian Federation); Maksimova, K. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Thiess, S.; Drube, W. [Deutsches Elektronen-Synchrotron DESY, D-22603 Hamburg (Germany)

    2013-02-11

    Electroresistance in ferroelectric tunnel junctions is controlled by changes in the electrostatic potential profile across the junction upon polarization reversal of the ultrathin ferroelectric barrier layer. Here, hard X-ray photoemission spectroscopy is used to reconstruct the electric potential barrier profile in as-grown Cr/BaTiO{sub 3}(001)/Pt(001) heterostructures. Transport properties of Cr/BaTiO{sub 3}/Pt junctions with a sub-{mu}m Cr top electrode are interpreted in terms of tunneling electroresistance with resistance changes of a factor of {approx}30 upon polarization reversal. By fitting the I-V characteristics with the model employing an experimentally determined electric potential barrier we derive the step height changes at the BaTiO{sub 3}/Pt (Cr/BaTiO{sub 3}) interface +0.42(-0.03) eV following downward to upward polarization reversal.

  11. BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

    Energy Technology Data Exchange (ETDEWEB)

    Swerts, J., E-mail: Johan.Swerts@imec.be; Mertens, S.; Lin, T.; Couet, S.; Tomczak, Y.; Sankaran, K.; Pourtois, G.; Kim, W.; Meersschaut, J.; Souriau, L.; Radisic, D.; Van Elshocht, S.; Kar, G.; Furnemont, A. [imec, Kapeldreef 75, Leuven 3001 (Belgium)

    2015-06-29

    Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface of the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.

  12. BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

    Science.gov (United States)

    Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Tomczak, Y.; Sankaran, K.; Pourtois, G.; Kim, W.; Meersschaut, J.; Souriau, L.; Radisic, D.; Van Elshocht, S.; Kar, G.; Furnemont, A.

    2015-06-01

    Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface of the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm2. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.

  13. Ferroelectric switching of band alignments in LSMO/PZT/Co multiferroic tunnel junctions: an ab initio study

    Science.gov (United States)

    Imam, M.; Stojić, N.; Binggeli, N.

    2017-08-01

    Band alignments in ferroelectric tunnel junctions (FTJs) are expected to play a critical role in determining the charge transport across the tunneling barrier. In general, however, the interface band discontinuities and their polarization dependence are not well known in these systems. Using a first-principles density-functional-theory approach, we explore the ferroelectric (FE) polarization dependence of the band alignments in {{La}}0.7{{Sr}}0.3{{MnO}}3/{{PbZr}}0.2{{Ti}}0.8{{{O}}}3/{Co} (LSMO/PZT/Co) multiferroic tunnel junctions, for which recent experiments indicated an ON/OFF conductivity behavior upon switching the PZT FE polarization. Our results on the pseudomorphic defect-free LSMO/PZT/Co FTJs evidence a major FE switching effect on the band discontinuities at both interfaces. Based on the changes in the band alignments, we provide a possible explanation for the observed trends in the resistive switching.

  14. Use of a Superconducting Tunnel Junction for X-Ray Fluorescence Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hiller, L

    2001-03-06

    A superconducting tunnel junction (STJ) in combination with a superconducting absorber of radiation may function as a highly resolving x-ray spectrometer. Electronic excitations, or quasiparticles, are created when a superconductor absorbs an x ray and are detected as an excess tunnel current through the junction. The number of quasiparticles created and the magnitude of the excess current is proportional to the energy of the absorbed x ray. This is similar to existing semiconductor-based spectrometers that measure electron-hole pairs, but with 1000 times more excitations. The energy measurement therefore can be up to 30 times more precise with a superconducting detector than with a semiconductor detector. This work describes the development and testing of an STJ spectrometer design for x-ray fluorescence applications. First, the basic principles of the STJ spectrometer are explained. This is followed by detailed simulations of the variance in the number of quasiparticles produced by absorption of an x ray. This variance is inherent in the detector and establishes an upper limit on the resolving power of the spectrometer. These simulations include effects due to the materials used in the spectrometer and to the multilayer structure of the device. Next, the spectrometer is characterized as functions of operating temperature, incident x-ray energy, and count rate. Many of these tests were performed with the spectrometer attached to a synchrotron radiation port. Finally, example x-ray fluorescence spectra of materials exposed to synchrotron radiation are presented. These materials are of interest to semiconductor processing and structural biology, two fields that will benefit immediately from the improved resolving power of the STJ spectrometer.

  15. Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta|CoFe|MgO magnetic tunnel junctions: A first-principles study

    Science.gov (United States)

    Sankaran, K.; Swerts, J.; Couet, S.; Stokbro, K.; Pourtois, G.

    2016-09-01

    To investigate the impact of both the CoFe ferromagnetic layer thickness and the capping paramagnetic layer on the tunnel magnetoresistance (TMR), we performed first-principles simulations on epitaxial magnetic tunnel junctions contacted with either CoFe or Ta paramagnetic capping layers. We observed a strong oscillation of the TMR amplitude with respect to the thickness of the ferromagnetic layer. The TMR is found to be amplified whenever the MgO spin tunnel barrier is thickened. Quantization of the electronic structure of the ferromagnetic layers is found to be at the origin of this oscillatory behavior. Metals such as Ta contacting the magnetic layer are found to enhance the amplitude of the oscillations due to the occurrence of an interface dipole. The latter drives the band alignment and tunes the nature of the spin channels that are active during the tunneling process. Subsequently, the regular transmission spin channels are modulated in the magnetic tunnel junction stack and other complex ones are being activated.

  16. Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation

    Science.gov (United States)

    Kobayashi, Daisuke; Hirose, Kazuyuki; Makino, Takahiro; Onoda, Shinobu; Ohshima, Takeshi; Ikeda, Shoji; Sato, Hideo; Inocencio Enobio, Eli Christopher; Endoh, Tetsuo; Ohno, Hideo

    2017-08-01

    The influences of various types of high-energy heavy-ion radiation on 10-nm-scale CoFeB-MgO magnetic tunnel junctions with a perpendicular easy axis have been investigated. In addition to possible latent damage, which has already been pointed out in previous studies, high-energy heavy-ion bombardments demonstrated that the magnetic tunnel junctions may exhibit clear flips between their high- and low-resistance states designed for a digital bit 1 or 0. It was also demonstrated that flipped magnetic tunnel junctions still may provide proper memory functions such as read, write, and hold capabilities. These two findings proved that high-energy heavy ions can produce recoverable bit flips in magnetic tunnel junctions, i.e., soft errors. Data analyses suggested that the resistance flips stem from magnetization reversals of the ferromagnetic layers and that each of them is caused by a single strike of heavy ions. It was concurrently found that an ion strike does not always result in a flip, suggesting a stochastic process behind the flip. Experimental data also showed that the flip phenomenon is dependent on the device and heavy-ion characteristics. Among them, the diameter of the device and the linear energy transfer of the heavy ions were revealed as the key parameters. From their dependences, the physical mechanism behind the flip was discussed. It is likely that a 10-nm-scale ferromagnetic disk loses its magnetization due to a local temperature increase induced by a single strike of heavy ions; this demagnetization is followed by a cooling period associated with a possible stochastic recovery process. On the basis of this hypothesis, a simple analytical model was developed, and it was found that the model accounts for the results reasonably well. This model also predicted that magnetic tunnel junctions provide sufficiently high soft-error reliability for use in space, highlighting their advantage over their counterpart conventional semiconductor memories.

  17. Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions

    Science.gov (United States)

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Prejbeanu, Ioan L.; Dieny, Bernard

    2016-02-01

    We report here the development of Pt and Pd-free perpendicular magnetic tunnel junctions (p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom synthetic Co/Pt reference layer and a synthetic FeCoB/Ru/FeCoB storage layer covered with an MgO layer. We first investigate the evolution of RKKY coupling with Ru spacer thickness in such a storage layer. The coupling becomes antiferromagnetic above 0.5 nm and its strength decreases monotonously with increasing Ru thickness. This contrasts with the behavior of Co-based systems for which a maximum in interlayer coupling is generally observed around 0.8 nm. A thin Ta insertion below the Ru spacer considerably decreases the coupling energy, without basically changing its variation with Ru thickness. After optimization of the non-magnetic and magnetic layer thicknesses, it appears that such a FeCoB/Ru/FeCoB synthetic storage layer sandwiched between MgO barriers can be made stable enough to actually be used as hard reference layer in single or double magnetic tunnel junctions, the storage layer being now a single soft FeCoB layer. Finally, we realize Pt- or Pd-free robust perpendicular magnetic tunnel junctions, still keeping the advantage of a synthetic reference layer in terms of reduction of stray fields at small pillar sizes.

  18. The normal anatomy around the oesophagogastric junction: an endoscopic view.

    Science.gov (United States)

    Boyce, H Worth

    2008-01-01

    Where the oesophagus ends and the stomach begins has been a bone of contention for decades between the histologist, physiologist, gastroenterologist, radiologist and surgeon. The oesophagogastric junction (OGJ) is an important anatomical region because of its essential functions in relation to swallowing and as a site of structural defects, inflammation, metaplasia and neoplasia. The location of the diaphragmatic hiatus in relation to the distal oesophagus, the level of the squamocolumnar mucosal junction (SCJ), the location of the distal margin of the mucosal palisade veins and the proximal margin of the gastric mucosal folds are features that permit an accurate endoscopic diagnosis of hiatal hernia and reflux sequelae, including even a minimal extent for Barrett's oesophagus. The physiological OGJ region can be considered to be between the rosette of the lower oesophageal sphincter (LOS) and the angle of His. The most reliable benchmarks for the precise mural OGJ that can be identified during endoscopy are the levels of the cephalad margins of the linear gastric mucosal folds, viewed with the lumen deflated as much as possible, that are juxtaposed to the level of the caudad extent of the oesophageal mucosal palisade veins.

  19. Massive Dirac fermion transport in a gapped graphene-based magnetic tunnel junction

    Science.gov (United States)

    Soodchomshom, Bumned; Tang, I.-Ming; Hoonsawat, Rassmidara

    2009-08-01

    The spin transport in a graphene-based magnetic (NG/ferromagnetic barrier (FB)/NG) tunnel junction with the graphene sheet being grown on a SiC substrate is investigated. Zhou et al. [Nat. Mater. 6 (2007) 770] has shown that in these epitaxial grown graphene sheets, the electrons behave like massive relativistic particles with an energy gap of 2 Δ∼260 meV opening up in the energy spectrum of the massive relativistic electron. Basing on assumption that gap in graphene can occur under the influence of the magnetic field, we find that in the case of thick ferromagnetic graphene barriers, the electronic gap causes the barrier to behave as a strong insulator when the gate potential is in the range 400-130 meVswitched from a 100% spin up current to a 100% spin down current by small variation of V G from V G E f , the features of a perfect spin filtering electronic junction.

  20. Proximity effect in planar superconducting tunnel junctions containing Nb/NiCu superconductor/ferromagnet bilayers

    Science.gov (United States)

    Pepe, G. P.; Latempa, R.; Parlato, L.; Ruotolo, A.; Ausanio, G.; Peluso, G.; Barone, A.; Golubov, A. A.; Fominov, Ya. V.; Kupriyanov, M. Yu.

    2006-02-01

    We present experimental results concerning both the fabrication and characterization of superconducting tunnel junctions containing superconductor/ferromagnet (S/F) bilayers made by niobium (S) and a weak ferromagnetic Ni0.50Cu0.50 alloy. Josephson junctions have been characterized down to T=1.4K in terms of current-voltage I - V characteristics and Josephson critical current versus magnetic field. By means of a numerical deconvolution of the I - V data the electronic density of states on both sides of the S/F bilayer has been evaluated at low temperatures. Results have been compared with theoretical predictions from a proximity model for S/F bilayers in the dirty limit in the framework of Usadel equations for the S and F layers, respectively. The main physical parameters characterizing the proximity effect in the Nb/NiCu bilayer, such as the coherence length and the exchange field energy of the F metal, and the S/F interface parameters have been also estimated.

  1. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Andrieu, S., E-mail: stephane.andrieu@univ-lorraine.fr; Bonell, F.; Hauet, T.; Montaigne, F. [Institut Jean Lamour, Nancy University/CNRS, Bd des Aiguillettes, BP239, 54506 Vandoeuvre-lès-Nancy (France); Calmels, L.; Snoeck, E. [CEMES, CNRS and Toulouse University, 29 rue Jeanne Marvig, 31055 Toulouse (France); Lefevre, P.; Bertran, F. [Synchrotron SOLEIL-CNRS, L' Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette cedex (France)

    2014-05-07

    The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe{sub 1−x}V{sub x} electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe{sub 1−X}Co{sub x}/MgO/Fe{sub 1−X}Co{sub x} (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty Δ1 minority spin state towards the Fermi level.

  2. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

    Science.gov (United States)

    Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

    2016-07-01

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3 these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

  3. Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface

    Directory of Open Access Journals (Sweden)

    Hisashi Inoue

    2015-11-01

    Full Text Available The observed magnetoresistance (MR in three-terminal (3T ferromagnet-nonmagnet (FM-NM tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect of a spin accumulation, thus offering a powerful approach for characterizing the spin lifetime of candidate materials for spintronics applications. However, due to crucial discrepancies of the extracted spin parameters with known materials properties, this interpretation has come under intense scrutiny. By employing epitaxial artificial dipoles as the tunnel barrier in oxide heterostructures, the band alignments between the FM and NM channels can be controllably engineered, providing an experimental platform for testing the predictions of the various spin accumulation models. Using this approach, we have been able to definitively rule out spin accumulation as the origin of the 3T MR. Instead, we assign the origin of the magnetoresistance to spin-dependent hopping through defect states in the barrier, a fundamental phenomenon seen across diverse systems. A theoretical framework is developed that can account for the signal amplitude, linewidth, and anisotropy.

  4. Resonant spin-transfer torque in asymmetric double barrier magnetic tunnel junctions (MTJs)

    Science.gov (United States)

    Daqiq, Reza; Ghobadi, Nader

    2017-02-01

    The substitution effect of a Ferro-magnet (FM) electrode by a half-metallic FM material La0.7Sr0.3MnO3 (LSMO) on charge current and spin-transfer torque (STT) components is studied in MgO-based double barrier magnetic tunnel junctions (DBMTJs) with a middle non-magnetic metal (NM) layer. Using non-equilibrium Green's function (NEGF) formalism, it is observed that the current and STT components show oscillatory behavior due to quantum well states in the middle NM layer and resonant tunneling effect. We also study effect of difference in the thickness of the MgO insulators. Bias dependence demonstrate the magnitude enhancement of the current and in-plane STT in new asymmetric DBMTJs (A-DBMTJs) compared with symmetric DBMTJs (S-DBMTJs), however, perpendicular STT decreases in the A-DBMTJs. Results also show different behavior compared with conventional asymmetric MTJs and spin valves (SVs). Therefore, one can design new memory devices by means of suitable insulator and FM electrodes with proper thicknesses.

  5. Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

    KAUST Repository

    Chshiev, M.

    2015-09-21

    In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

  6. Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode.

    Science.gov (United States)

    Lee, Hong-Sub; Kang, Kyung-Mun; Yeom, Geun Young; Park, Hyung-Ho

    2016-05-27

    Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a change in the ferroelectric polarization direction, allowing the FTJ to overcome the restriction encountered in redox-based memristors. Herein, the memristive effect of an FTJ was investigated by ultraviolet-visible (UV-Vis) absorption spectroscopy using a removable mercury (Hg) top electrode (TE), BaTiO3 (BTO) ferroelectric tunnel layer, La0.7Sr0.3MnO3 (LSMO) semiconductor bottom electrode, and wide-bandgap quartz (100) single-crystal substrate to determine the low-resistance state (LRS) and high-resistance state (HRS) of the FTJ. A BTO (110)/LSMO (110) polycrystal memristor involving a Hg TE showed a small memristive effect (switching ratio). This effect decreased with increasing read voltage because of a small potential barrier height. The LRS and HRS of the FTJ showed quasi-similar UV-Vis absorption spectra, consistent with the small energy difference between the valence-band maximum of BTO and Fermi level of LSMO near the interface between the LRS and HRS. This energy difference stemmed from the ferroelectric polarization and charge-screening effect of LSMO based on an electrostatic model of the FTJ.

  7. Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode

    Science.gov (United States)

    Lee, Hong-Sub; Kang, Kyung-Mun; Yeom, Geun Young; Park, Hyung-Ho

    2016-05-01

    Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a change in the ferroelectric polarization direction, allowing the FTJ to overcome the restriction encountered in redox-based memristors. Herein, the memristive effect of an FTJ was investigated by ultraviolet-visible (UV-Vis) absorption spectroscopy using a removable mercury (Hg) top electrode (TE), BaTiO3 (BTO) ferroelectric tunnel layer, La0.7Sr0.3MnO3 (LSMO) semiconductor bottom electrode, and wide-bandgap quartz (100) single-crystal substrate to determine the low-resistance state (LRS) and high-resistance state (HRS) of the FTJ. A BTO (110)/LSMO (110) polycrystal memristor involving a Hg TE showed a small memristive effect (switching ratio). This effect decreased with increasing read voltage because of a small potential barrier height. The LRS and HRS of the FTJ showed quasi-similar UV-Vis absorption spectra, consistent with the small energy difference between the valence-band maximum of BTO and Fermi level of LSMO near the interface between the LRS and HRS. This energy difference stemmed from the ferroelectric polarization and charge-screening effect of LSMO based on an electrostatic model of the FTJ.

  8. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer.

    Science.gov (United States)

    Suzuki, K Z; Ranjbar, R; Okabayashi, J; Miura, Y; Sugihara, A; Tsuchiura, H; Mizukami, S

    2016-07-26

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm(3) and magnetisation below 500 emu/cm(3); these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

  9. AlOx barrier growth in magnetic tunnel junctions for sensor applications

    Science.gov (United States)

    Knudde, S.; Farinha, G.; Leitao, D. C.; Ferreira, R.; Cardoso, S.; Freitas, P. P.

    2016-08-01

    Magnetic tunnel junction (MTJ) research has been focused on MgO-based crystalline structures due to high tunnel magnetoresistance (TMR), despite requiring a more severe process control than previous generations of MTJ stacks based on amorphous barriers (e.g. AlOx). In this work, we study the electrical transport properties in AlOx barriers in MTJ sensors fabricated using Ion beam sputtering and remote plasma oxidation. Amorphous barriers were prepared from oxidation of thin Al films, deposited in single step barrier (SSB-Al 1 nm/oxidation) or double step barrier (DSB-Al 0.5 nm/oxidation/Al 0.5 nm/oxidation) structures. We show tunable resistance-area products (RxA) ranging from ≈ 10 Ω μ m2 (suited for nano devices) up to ≈ 100 k Ω μ m2 (suited for large area sensors) with TMR above 30%. For all geometries studied, the structures have a coercivity free linear response and require none or one annealing step. This makes them very competitive for all industrial applications where the TMR level is not the dominant specification to meet.

  10. Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

    Directory of Open Access Journals (Sweden)

    Liang Liu

    2014-12-01

    Full Text Available We report on the low frequency (LF noise measurements in magnetic tunnel junctions (MTJs below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlOx/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlOx-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise.

  11. Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

    Science.gov (United States)

    Chatterjee, Jyotirmoy; Sousa, Ricardo C.; Perrissin, Nicolas; Auffret, Stéphane; Ducruet, Clarisse; Dieny, Bernard

    2017-05-01

    The magnetic properties of the perpendicular storage electrode (buffer/MgO/FeCoB/Cap) were studied as a function of annealing temperature by replacing Ta with W and W/Ta cap layers with variable thicknesses. W in the cap boosts up the annealing stability and increases the effective perpendicular anisotropy by 30% compared to the Ta cap. Correspondingly, an increase in the FeCoB critical thickness characterizing the transition from perpendicular to in-plane anisotropy was observed. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode highly robust against annealing up to 570 °C. The stiffening of the overall stack resulting from the W insertion due to its very high melting temperature seems to be the key mechanism behind the extremely high thermal robustness. The Gilbert damping constant of FeCoB with the W/Ta cap was found to be lower when compared with the Ta cap and stable with annealing. The evolution of the magnetic properties of bottom pinned perpendicular magnetic tunnel junctions (p-MTJ) stack with the W2/Ta1 nm cap layer shows back-end-of-line compatibility with increasing tunnel magnetoresistance up to the annealing temperature of 425 °C. The pMTJ thermal budget is limited by the synthetic antiferromagnetic hard layer which is stable up to 425 °C annealing temperature while the storage layer is stable up to 455 °C.

  12. Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Liang; Xiang, Li; Guo, Huiqiang; Wei, Jian, E-mail: weijian6791@pku.edu.cn [International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China and Collaborative Innovation Center of Quantum Matter, Beijing (China); Li, D. L.; Yuan, Z. H.; Feng, J. F., E-mail: jiafengfeng@iphy.ac.cn; Han, X. F. [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Coey, J. M. D. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

    2014-12-15

    We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlO{sub x}/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlO{sub x}-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN) is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise.

  13. Influence of the thermal interface resistance on the thermovoltage of a magnetic tunnel junction

    Science.gov (United States)

    Böhnert, Tim; Dutra, Roberta; Sommer, Rubem L.; Paz, Elvira; Serrano-Guisan, Santiago; Ferreira, Ricardo; Freitas, Paulo P.

    2017-03-01

    In the field of spin caloritronics recent theoretical models suggested a significant influence of the interfaces of the magnetic tunnel junction (MTJ) on the thermal transport. In this work magnetothermopower measurements are carried out on CoFeB/MgO/CoFeB nanopillars and an unexpected increase of the thermovoltage with the diameter of the nanopillars is observed. To understand this behavior the thermal profiles are computed by finite element simulations. The observed behavior with the pillar diameter could only be reproduced in simulations by considering a far lower effective thermal conductivity of the MgO than the intrinsic thin-film value. In agreement with theoretical predictions, a finite thermal conductivity of the MgO/CoFeB interface can explain this observation. This is experimental evidence of the influence of the thermal resistance of the MgO/CoFeB interfaces on magnetothermovoltage measurements and is in agreement with recent theoretical predictions. The measured magnetothermovoltage is around 4.5 μV and the simulated temperature difference is about 2 K across the tunnel barrier, which resulted in a magnetic contribution of the thermopower of Δ SMTJ≈-2.25 μ V K-1 . This value was about 20 times smaller than the result obtained by the typically used thermal conductivity of MgO thin films.

  14. Thermal Transport and Nonequilibrium Temperature Drop Across a Magnetic Tunnel Junction

    Science.gov (United States)

    Zhang, Jia; Bachman, Michael; Czerner, Michael; Heiliger, Christian

    2015-07-01

    In the field of spin caloritronics, spin-dependent transport phenomena are observed in a number of current experiments where a temperature gradient across a nanostructured interface is applied. The interpretation of these experiments is not clear as both phonons and electrons may contribute to thermal transport. Therefore, it still remains an open question how the temperature drop across a magnetic nanostructured interface arises microscopically. We answer this question for the case of a magnetic tunnel junction (MTJ) where the tunneling magneto-Seebeck effect occurs. Our explanation may be extended to other types of nanostructured interfaces. We explicitly calculate phonon and electron thermal conductance across Fe /MgO /Fe MTJs in an ab initio approach using a Green function method. Furthermore, we are able to calculate the electron and phonon temperature profile across the Fe /MgO /Fe MTJ by estimating the electron-phonon interaction in the Fe leads. Our results show that there is an electron-phonon temperature imbalance at the Fe-MgO interfaces. As a consequence, a revision of the interpretation of current experimental measurements may be necessary.

  15. Cryogenic Phase-Locking Loop System Based on SIS Tunnel Junction

    Science.gov (United States)

    Khudchenko, A. V.; Koshelets, V. P.; Kalashnikov, K. V.

    An ultra-wideband cryogenic phase-locking loop (CPLL) system is a new cryogenic device. The CPLL is intended for phase-locking of a Flux-Flow Oscillator (FFO) in a Superconducting Integrated Receiver (SIR) but can be used for any cryogenic terahertz oscillator. The key element of the CPLL is Cryogenic Phase Detector (CPD), a recently proposed new superconducting element. The CPD is an innovative implementation of superconductor-insulator-superconductor (SIS) tunnel junction. All components of the CPLL reside inside a cryostat at 4.2 K, with the loop length of about 50 cm and the total loop delay 5.5 ns. Such a small delay results in CPLL synchronization bandwidth as wide as 40 MHz and allows phase-locking of more than 60% of the power emitted by the FFO even for FFO linewidth of about 10 MHz. This percentage of phase-locked power three times exceeds that achieved with conventional room-temperature PLLs. Such an improvement enables reducing the FFO phase noise and extending the SIR operation range.Another new approach to the FFO phase-locking has been proposed and experimentally verified. The FFO has been synchronized by a cryogenic harmonic phase detector (CHPD) based on the SIS junction. The CHPD operates simultaneously as the harmonic mixer (HM) and phase detector. We have studied the HM based on the SIS junction theoretically; in particular we calculated 3D dependences of the HM output signal power versus the bias voltage and the LO power. Results of the calculations have been compared with experimental measurements. Good qualitative and quantitative correspondence has been achieved. The FFO phase-locking by the CHPD has been demonstrated. Such a PLL system is expected to be extra wideband. This concept is very promising for building of the multi-pixel SIR array.

  16. Quantum transport in two dimensional electron gas/p-wave superconductor junction with Rashba spin–orbit coupling at the interface and in the normal layer

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadkhani, R., E-mail: rmkhani@znu.ac.ir; Hassanloo, Gh.

    2014-11-01

    We have studied the tunneling conductance of a clean two dimensional electron gas/p- wave superconductor junction with Rashba spin–orbit coupling (RSOC) which is present in the normal layer and at the interface. Using the extended Blonder–Tinkham–Klapwijk formalism we have found that the subgap conductance peaks are shifted to a nonzero bias by RSOC at the interface which are the same as Ref. [1]. It is shown that for low insulating barrier and in the absence of the interface RSOC, the tunneling conductance decreases within energy gap with increasing of the RSOC in the normal layer while for high insulating barrier it enhances by increase of the RSOC. We have also shown that the RSOC inside the normal cannot affect the location of the subgap conductance peaks shifted by the interface RSOC.

  17. Unidirectional Spin-Dependent Molecule-Ferromagnet Hybridized States Anisotropy in Cobalt Phthalocyanine Based Magnetic Tunnel Junctions

    Science.gov (United States)

    Barraud, Clément; Bouzehouane, Karim; Deranlot, Cyrile; Fusil, Stéphane; Jabbar, Hashim; Arabski, Jacek; Rakshit, Rajib; Kim, Dong-Jik; Kieber, Christophe; Boukari, Samy; Bowen, Martin; Beaurepaire, Eric; Seneor, Pierre; Mattana, Richard; Petroff, Frédéric

    2015-05-01

    Organic or molecular spintronics is a rising field of research at the frontier between condensed matter physics and chemistry. It aims to mix spin physics and the richness of chemistry towards designing new properties for spin electronics devices through engineering at the molecular scale. Beyond the expectation of a long spin lifetime, molecules can be also used to tailor the spin polarization of the injected current through the spin-dependent hybridization between molecules and ferromagnetic electrodes. In this Letter, we provide direct evidence of a hybrid interface spin polarization reversal due to the differing hybridization between phthalocyanine molecules and each cobalt electrode in Co /CoPc /Co magnetic tunnel junctions. Tunnel magnetoresistance and anisotropic tunnel magnetoresistance experiments show that interfacial hybridized electronic states have a unidirectional anisotropy that can be controlled by an electric field and that spin hybridization at the bottom and top interfaces differ, leading to an inverse tunnel magnetoresistance.

  18. Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions

    Science.gov (United States)

    Vedyayev, A.; Ryzhanova, N.; Strelkov, N.; Titova, M.; Chshiev, M.; Rodmacq, B.; Auffret, S.; Cuchet, L.; Nistor, L.; Dieny, B.

    2017-02-01

    We present a theory of the anisotropy of tunneling magnetoresistance (ATMR) phenomenon in magnetic tunnel junctions (MTJs) attributed to Rashba spin-orbit interaction in the insulating barrier. ATMR represents the difference of tunnel magnetoresistance (TMR) amplitude measured with in-plane and out-of-plane magnetic configurations. It is demonstrated that within the spin-polarized free-electron model the change of conductance associated with the ATMR is exactly twice the change of conductance measured at full saturation (i.e., in parallel configuration of magnetizations) between in-plane and out-of-plane configuration, i.e., the tunneling anisotropic magnetoresistance (TAMR). Both ATMR and TAMR are closely related to the TMR amplitude and spin-orbit constant. The predicted ATMR phenomenon is confirmed experimentally, showing a few percent value in the case of the widely studied CoFeB/MgO/CoFeB based MTJ.

  19. Influence of the MgO barrier thickness on the lifetime characteristics of magnetic tunnelling junctions for sensors

    Science.gov (United States)

    Conca, A.; Casper, F.; Paul, J.; Lehndorff, R.; Jakob, G.; Kläui, M.; Hillebrands, B.; Leven, B.

    2016-06-01

    Magnetic tunnelling junctions increasingly enter the market for magnetic sensor applications. Thus, technological parameters such as the lifetime characteristics become more and more important. Here, an analysis of the lifetime characteristics of magnetic tunnelling junctions using the Weibull statistical distribution for CoFeB/MgO/CoFeB junctions is presented. The Weibull distribution is governed by two parameters, the characteristic lifetime η of the population and the shape parameter β, which gives information about the presence of an infant mortality. The suitability of the Weibull distribution is demonstrated for the description of dielectric breakdown processes in MgO-based tunnelling junctions at different voltages. A study of the dependence of the characteristic lifetime extrapolated to the low voltage regime, and the β parameter on the nominal barrier thickness and the resistance  ×  area product of the MgO barrier is shown. The influence of the RF deposition power for the MgO barrier and an annealing step on the Weibull parameters is also discussed.

  20. Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

    Directory of Open Access Journals (Sweden)

    Rui Sun

    2016-06-01

    Full Text Available We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100 substrates with a TiN buffer layer. A 50-nm-thick (200-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200-orientated TiN buffer layer and had a highly crystalline structure with the (200 orientation.

  1. Evidence of a Symmetry-Dependent Metallic Barrier in Fully Epitaxial MgO Based Magnetic Tunnel Junctions

    Science.gov (United States)

    Greullet, F.; Tiusan, C.; Montaigne, F.; Hehn, M.; Halley, D.; Bengone, O.; Bowen, M.; Weber, W.

    2007-11-01

    We report on the experimental observation of tunneling across an ultrathin metallic Cr spacer layer that is inserted at the interface of a Fe/MgO/Fe(001) junction. We show how this remarkable behavior in a solid-state device reflects a quenching in the transmission of particular electronic states, as expected from the symmetry-filtering properties of the MgO barrier and the band structure of the bcc Cr(001) spacer in the epitaxial junction stack. This ultrathin Cr metallic barrier can promote quantum well states in an adjacent Fe layer.

  2. Tunneling planer Hall effect in Ni81Fe19/Al2O3/Nix Fe1-x junction

    Institute of Scientific and Technical Information of China (English)

    陈慧余; 冯永嘉; 熊曹水

    1999-01-01

    Tunneling planer Hall (TPH) effect in Ni81Fe19/Al2O3/NixFe1-x trilayer junction is different from general planer Hall effect in single-layer film or two-layer junction. This effect concerns the spin-polarized transport, so that the TPH voltage depends on the angle between magnetic vectors of two ferromagnetic layers. The TPH effect is reported to be influenced by composition and magnetic properties of FM layers and the thickness of the insulating layer.

  3. Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM

    Science.gov (United States)

    Paul, William; Baumann, Susanne; Lutz, Christopher P.; Heinrich, Andreas J.

    2016-07-01

    We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5-35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function.

  4. Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

    Directory of Open Access Journals (Sweden)

    Q. L. Ma

    2015-08-01

    Full Text Available The ferrimagnetic superlattice (SL [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable magnetization. In this work, we fabricated SLs with different MnGa composition and studied the MnGa composition dependence of the structure and magnetic properties of the SLs. Furthermore, we fabricated fully perpendicular magnetic tunnel junctions with SLs as both top and bottom electrodes. A clear tunnel magnetoresistance (TMR effect with TMR ratio of 1.3% at room temperature was observed.

  5. Tunneling characteristics of YBa 2Cu 3O 7-δ-Pb window-type Josephson junctions

    Science.gov (United States)

    Frangi, F.; Dwir, B.; Pavuna, D.

    1992-02-01

    We present the results of tunneling measurements done on window-type, native-barrier YBa 2Cu 3O 7-δ-Pb junctions. We show features in the I-V curves which are related to the gap of YBa 2Cu 3O 7-δ, as well as to the Pb and YBa 2Cu 3O 7-δ phonon spectra. The nature of barrier in these structures is found to be semi-conducting. We can also see the asymmetry in the tunneling curves.

  6. Pancreaticobiliary reflux in patients with a normal pancreaticobiliary junction:Pathologic implications

    Institute of Scientific and Technical Information of China (English)

    Marcelo A Beltrán

    2011-01-01

    Knowledge on pancreaticobiliary reflux in normal pancreaticobiliary junction and its pathologic implications has experienced tremendous progress during the last few years.This editorial reviews the current knowledge on this condition and its pathological implications on gallbladder diseases.The following aspects were defined appropriate for discussion:(1) Evidence of carcinogenesis associated with pancreaticobiliary reflux; (2) Evidence of pancreaticobiliary reflux in normal pancreaticobiliary junction; and (3) Evidence of sphincter of Oddi (SO) dysfunction as a cause of pancreaticobiliary reflux in normal pancreaticobiliary junction.The articles reviewed were selected and classified according to five levels of evidence:LevelⅠ,meta-analysis double-blind randomized clinical trials,Level Ⅱ,cohort non-blinded studies and non-randomized clinical trials,Level Ⅲ, good quality case-control studies and non-randomized cohort studies,Level Ⅳ,case series and poor quality case-control studies,and Level Ⅴ,case report articles and experts' opinion.Evidence levels Ⅱ,Ⅲ,Ⅳ and Ⅴ were found to support biliary carcinogenesis associated with pancreaticobiliary reflux in normal and abnormal pancreaticobiliary junction.The same levels of evidence were found to support the common occurrence of pancreaticobiliary reflux in normal pancreaticobiliary junction, and SO dysfunction as the most plausible cause of this condition.Although an important body of research has been published regarding pancreaticobiliary reflux in normal pancreaticobiliary junction and its clinical significance, the current evidence does not fully support what has been suggested.Studies with evidence level I have not been undertaken.This is a fascinating subject of study,and if finally supported by evidence level I, the importance of this condition will constitute a major breakthrough in biliary pathology.

  7. Novel compact model for multi-level spin torque magnetic tunnel junctions

    Science.gov (United States)

    Prajapati, Sanjay; Verma, Shivam; Kulkarni, Anant Aravind; Kaushik, Brajesh Kumar

    2016-10-01

    Spin-transfer torque (STT) and spin-orbit torque (SOT) based magnetic tunnel junction (MTJ) devices are emerging as strong contenders for the next generation memories. Conventional STT magneto-resistive random access memory (MRAM) offers lower power, non-volatility and CMOS process compatibility. However, higher current requirement during the write operation leads to tunnel barrier reliability issues and larger access devices. SOT-MRAM eliminates the reliability issues with strong spin polarized current (100%) and separate read/write current paths; however, the additional two access transistors in SOT-MRAM results into increased cell area. Multilevel cell (MLC) structure paves a way to circumvent the problems related to the conventional STT/SOT based MTJ devices and provides enhanced integration density at reduced cost per bit. Conventional STT/SOT-MRAM requires a unit cell area of 10-60 F2 and reported simulations have been based on available single-level MTJ compact models. However, till date no compact model exists that can capture the device physics of MLC-MTJ accurately. Hence, a novel compact model is proposed in this paper to capture the accurate device physics and behaviour of the MLC-MTJs. It is designed for MLCs with different MTJ configurations demonstrated so far, such as series and parallel free layer based MLC-MTJs. The proposed model is coded in Verilog-A, which is compatible with SPICE for circuit level simulations. The model is in close agreement with the experimental results exhibiting an average error of less than 15%.

  8. Perpendicular magnetic anisotropy in CoXPd100-X alloys for magnetic tunnel junctions

    Science.gov (United States)

    Clark, B. D.; Natarajarathinam, A.; Tadisina, Z. R.; Chen, P. J.; Shull, R. D.; Gupta, S.

    2017-08-01

    CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ's) with high anisotropy and low damping are critical for spin-torque transfer random access memory (STT-RAM). Most schemes of making the pinned CoFeB fully perpendicular require ferrimagnets with high damping constants, a high temperature-grown L10 alloy, or an overly complex multilayered synthetic antiferromagnet (SyAF). We report a compositional study of perpendicular CoxPd alloy-pinned Co20Fe60B20/MgO based MTJ stacks, grown at moderate temperatures in a planetary deposition system. The perpendicular anisotropy of the CoxPd alloy films can be tuned based on the layer thickness and composition. The films were characterized by alternating gradient magnetometry (AGM), energy-dispersive X-rays (EDX), and X-ray diffraction (XRD). Current-in-plane tunneling (CIPT) measurements have also been performed on the compositionally varied CoxPd MTJ stacks. The CoxPd alloy becomes fully perpendicular at approximately x = 30% (atomic fraction) Co. Full-film MTJ stacks of Si/SiO2/MgO (13)/CoXPd100-x (50)/Ta (0.3)/CoFeB (1)/MgO (1.6)/CoFeB (1)/Ta (5)/Ru (10), with the numbers enclosed in parentheses being the layer thicknesses in nm, were sputtered onto thermally oxidized silicon substrates and in-situ lamp annealed at 400 °C for 5 min. CIPT measurements indicate that the highest TMR is observed for the CoPd composition with the highest perpendicular magnetic anisotropy.

  9. Heat transport and electron cooling in ballistic normal-metal/spin-filter/superconductor junctions

    Energy Technology Data Exchange (ETDEWEB)

    Kawabata, Shiro, E-mail: s-kawabata@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Vasenko, Andrey S. [LPMMC, Université Joseph Fourier and CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble (France); Ozaeta, Asier [Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Manuel de Lardizabal 5, E-20018 San Sebastián (Spain); Bergeret, Sebastian F. [Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Manuel de Lardizabal 5, E-20018 San Sebastián (Spain); Donostia International Physics Center (DIPC), Manuel de Lardizabal 5, E-20018 San Sebastián (Spain); Hekking, Frank W.J. [LPMMC, Université Joseph Fourier and CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble (France)

    2015-06-01

    We investigate electron cooling based on a clean normal-metal/spin-filter/superconductor junction. Due to the suppression of the Andreev reflection by the spin-filter effect, the cooling power of the system is found to be extremely higher than that for conventional normal-metal/nonmagnetic-insulator/superconductor coolers. Therefore we can extract large amount of heat from normal metals. Our results strongly indicate the practical usefulness of the spin-filter effect for cooling detectors, sensors, and quantum bits.

  10. Steady State and Dynamics of Joule Heating in Magnetic Tunnel Junctions Observed via the Temperature Dependence of RKKY Coupling

    Science.gov (United States)

    Chavent, A.; Ducruet, C.; Portemont, C.; Vila, L.; Alvarez-Hérault, J.; Sousa, R.; Prejbeanu, I. L.; Dieny, B.

    2016-09-01

    Understanding quantitatively the heating dynamics in magnetic tunnel junctions submitted to current pulses is very important in the context of spin-transfer-torque magnetic random-access memory development. Here we provide a method to probe the heating of magnetic tunnel junctions using the Ruderman-Kittel-Kasuya-Yoshida coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias voltage is measured thanks to the decrease of the spin-flop field with temperature. This method allows distinguishing spin-transfer torque effects from the influence of temperature on the switching field. The heating dynamics is then studied in real time by probing the conductance variation due to spin-flop rotation during heating. This approach provides a method for measuring fast heating in spintronic devices, particularly magnetic random-access memory using thermally assisted or spin-transfer torque writing.

  11. Tunneling Hamiltonian description of the atomic-scale 0-{pi} transition in superconductor/ferromagnetic-insulator junctions

    Energy Technology Data Exchange (ETDEWEB)

    Kawabata, S., E-mail: s-kawabata@aist.go.jp [Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)] [CREST, Japan Science and Technology Corporation (JST), Kawaguchi, Saitama 332-0012 (Japan); Tanaka, Y. [Department of Applied Physics, Nagoya University, Nagoya 464-8603 (Japan); Golubov, A.A. [Faculty of Science and Technology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Vasenko, A.S. [Institut Laue-Langevin, 6 rue Jules Horowitz, BP 156, 38042 Grenoble (France); Kashiwaya, S. [Nanoelectronics Research Institute (NeRI), AIST, Tsukuba, Ibaraki 305-8568 (Japan); Asano, Y. [Department of Applied Physics, Hokkaido University, Sapporo 060-8628 (Japan)

    2011-11-15

    Josephson transport in a superconductor/ferromagnetic-insulator(FI)/superconductor junction is investigated analytically. By using the tunneling Hamiltonian method, we found that the spin-dependent {pi}-phase shift of the electron wave function in a FI layer gives the atomic scale 0-{pi} transition. This observation is consistent with previous numerical results. We show a perturbation theory of the Josephson transport through ferromagnetic insulators (FIs). Recently we have found that the appearance of the atomic scale 0-{pi} transition in such junctions based on numerical calculations. In order to explore the mechanism of this anomalous transition, we have analytically calculated the Josephson current using the tunneling Hamiltonian theory and found that the spin dependent {pi}-phase shift in the FI barrier gives the atomic scale 0-{pi} transition.

  12. Interfacial Nb-substitution induced anomalous enhancement of polarization and conductivity in BaTiO3 ferroelectric tunnel junctions

    Directory of Open Access Journals (Sweden)

    H. F. Li

    2014-12-01

    Full Text Available Using density functional theory (DFT method combined with non-equilibrium Green’s function approach, we systematically investigated the structural, ferroelectric and electronic transport properties of Pt/BaTiO3/Pt ferroelectric tunnel junctions (FTJ with the interface atomic layers doped by charge neutral NbTi substitution. It is found that interfacial NbTi substitution will produce several anomalous effects such as the vanishing of ferroelectric critical thickness and the decrease of junction resistance against tunneling current. Consequently, the thickness of the ferroelectric thin film (FTF in the FTJ can be reduced, and both the electroresistance effect and sensitivity to external bias of the FTJ are enhanced. Our calculations indicate that the enhancements of conductivity and ferroelectric distortion can coexist in FTJs, which should be important for applications of functional electronic devices based on FTJs.

  13. Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model - Part I: Analytical Model of the MTJ STO

    OpenAIRE

    Chen, Tingsu; Eklund, Anders; Iacocca, Ezio; Rodriguez, Saul; Malm, Gunnar; Åkerman, Johan; Rusu, Ana

    2014-01-01

    Magnetic tunnel junction (MTJ) spin torque oscillators (STO) have shown the potential to be used in a wide range of microwave and sensing applications. To evaluate potential uses of MTJ STO technology in various applications, an analytical model that can capture MTJ STO's characteristics, while enabling system- and circuit-level designs, is of great importance. An analytical model based on macrospin approximation is necessary for these designs since it allows implementation in hardware descri...

  14. Conductance of d-wave superconductor/normal metal/d-wave superconductor junctions

    Science.gov (United States)

    Pesin, Dmytro; Andreev, Anton; Spivak, Boris

    2008-03-01

    We develop a theory of the low-temperature conductance of superconductor/normal metal/superconductor junctions in which the superconductors have d-wave pairing symmetry. We show that at low temperatures the conductance of the junction is determined by the inelastic relaxation time of quasiparticles in the bulk of d-wave superconductors, GDND√&(d)circ;ɛ. Thus it greatly exceeds the conductance of the normal metal part of the junction, which is controlled by the elastic mean free path. This dependence of GDND on the inelastic relaxation time should be contrasted with that of the low-temperature conductance of the junction in the case of the s- wave superconductor leads, GSNS. In the latter case the conductance is proportional to the first power of the inelastic electron relaxation time in the normal metal part of the junction, GSNSτɛ^(n) [1]. [1] S. V. Lempitskii, Sov. Phys. JETP 58, 624 (1983); U. Gunsenheimer and A. D. Zaikin, Phys. Rev. B50, 6317 (1994); F. Zhou and B. Spivak, JETP Lett. 65, 369 (1997).

  15. Electron transmission in normal/heavy-fermion superconductor junctions

    OpenAIRE

    Araujo, M. A. N; Sacramento, P. D.

    2008-01-01

    The Andreev reflection between a normal metal (N) and a heavy-fermion superconductor (HFS) is studied and the boundary conditions for the electron's wave function in the two systems are established in the framework of a two band model for the HFS. Hence we show in a simple and explicit way that the mass enhancement factors in the heavy-fermion (HF) metal do not cause impedance at the N/HFS interface, in accordance with arguments previously presented. We also present an extension of the theory...

  16. Nonlinear damping effects in spin torque dynamics of magnetic tunnel junctions

    Science.gov (United States)

    Barsukov, Igor; Chen, Yu-Jin; Lee, Han Kyu; Goncalves, Alexandre; Katine, Jordan; Arias, Rodrigo; Ivanov, Boris; Krivorotov, Ilya

    2015-03-01

    Performance of nanoscale spin torque devices such as memory (STT-MRAM) and auto-oscillators critically depends on magnetic relaxation. It is commonly assumed that magnetization dynamics in the presence of spin torque can be understood as simple competition between antidamping arising from spin torque and Gilbert damping of the free layer. However our experiments reveal that the situation is more complex and that nonlinear damping processes in the free layer of magnetic tunnel junction (MTJ) nanopillars can strongly alter spin torque driven dynamics. We study elliptical MTJ nanopillars with in-plane magnetizations of the free layer and SAF layers by spin torque ferromagnetic resonance. We find an excitation spectrum associated with standing spin waves of the free layer. By varying the external field, the energy of a higher-order spin wave mode becomes twice the energy of the main mode. This opens up a nonlinear, resonant relaxation channel, giving rise to a damping increase of approximately 20 percent. With increasing spin torque provided by a DC bias current, we find that this relaxation channel competes with antidamping in a nonlinear manner, increasingly contributing to and even dominating the relaxation at subcritical currents.

  17. High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications.

    Science.gov (United States)

    Chen, Jun-Yang; Lau, Yong-Chang; Coey, J M D; Li, Mo; Wang, Jian-Ping

    2017-02-02

    The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices' robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.

  18. Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Z. H.; Huang, L.; Feng, J. F., E-mail: jiafengfeng@iphy.ac.cn; Wen, Z. C.; Li, D. L.; Han, X. F. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190 (China); Nakano, Takafumi; Naganuma, Hiroshi, E-mail: naganuma@mlab.apph.tohoku.ac.jp [Department of Applied Physics, Tohoku University, Sendai, Miyagi 980-8579 (Japan); Yu, T. [Department of Applied Physics, Tohoku University, Sendai, Miyagi 980-8579 (Japan); College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2015-08-07

    MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir{sub 22}Mn{sub 78} (6)/Ni{sub 80}Fe{sub 20} (t{sub NiFe} = 20–70)/Ru (0.9)/Co{sub 40}Fe{sub 40}B{sub 20} (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70 nm NiFe at the optimum annealing temperature of 230 °C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

  19. A Superconducting Tunnel Junction X-ray Spectrometer without Liquid Cryogens

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, S; Hertrich, T; Drury, O B; Cherepy, N J; Hohne, J

    2008-06-15

    Superconducting tunnel junctions (STJs) are being developed as X-ray detectors because they combine the high energy resolution of cryogenic detector technologies with the high count rate capabilities of athermal devices. We have built STJ spectrometers for chemical analysis of dilute samples by high-resolution soft X-ray spectroscopy at the synchrotron. The instruments use 36 pixels of 200 {micro}m x 200 {micro}m Nb-Al-AlOx-Al-Nb STJs with 165 nm thick Nb absorber films. They have achieved an energy resolution of {approx}10-20 eV FWHM for X-ray energies below 1 keV, and can be operated at a total count rate of {approx}10{sup 6} counts/s. For increased user-friendliness, we have built a liquid-cryogen-free refrigerator based on a two-stage pulse tube cryocooler in combination with a two-stage adiabatic demagnetization stage. It holds the STJ detector at the end of a 40-cm-long cold finger, and attains the required operating temperature of {approx}0.3 K at the push of a button. We describe the instrument performance and present speciation measurements on Eu dopant activators in the novel scintillator material SrI{sub 2} to illustrate the potential for STJ spectrometers at the synchrotron.

  20. SPICE modelling of magnetic tunnel junctions written by spin-transfer torque

    Energy Technology Data Exchange (ETDEWEB)

    Guo, W; Prenat, G; De Mestier, N; Baraduc, C; Dieny, B [SPINTEC, UMR(8191), INAC, CEA/CNRS/UJF, 17 Av. des Martyrs, 38054 Grenoble Cedex 9 (France); Javerliac, V; El Baraji, M, E-mail: guillaume.prenat@cea.f [CROCUS Technology, 5 Place Robert Schuman, 38025 Grenoble (France)

    2010-06-02

    Spintronics aims at extending the possibility of conventional electronics by using not only the charge of the electron but also its spin. The resulting spintronic devices, combining the front-end complementary metal oxide semiconductor technology of electronics with a magnetic back-end technology, employ magnetic tunnel junctions (MTJs) as core elements. With the intent of simulating a circuit without fabricating it first, a reliable MTJ electrical model which is applicable to the standard SPICE (Simulation Program with Integrated Circuit Emphasis) simulator is required. Since such a model was lacking so far, we present a MTJ SPICE model whose magnetic state is written by using the spin-transfer torque effect. This model has been developed in the C language and validated on the Cadence Virtuoso Platform with a Spectre simulator. Its operation is similar to that of the standard BSIM (Berkeley Short-channel IGFET Model) SPICE model of the MOS transistor and fully compatible with the SPICE electrical simulator. The simulation results obtained using this model have been found in good accord with those theoretical macrospin calculations and results.

  1. Modeling of switching energy of magnetic tunnel junction devices with tilted magnetization

    Energy Technology Data Exchange (ETDEWEB)

    Surawanitkun, C. [Science and Technology Program, Nongkhai Campus, Khon Kaen University, Nongkhai 43000 (Thailand); Kaewrawang, A. [KKU-Seagate Cooperation Research Laboratory, Faculty of Engineering, Khon Kaen University, Khon Kaen 40002 (Thailand); Siritaratiwat, A., E-mail: apirat@kku.ac.th [KKU-Seagate Cooperation Research Laboratory, Faculty of Engineering, Khon Kaen University, Khon Kaen 40002 (Thailand); Kruesubthaworn, A. [Science and Technology Program, Nongkhai Campus, Khon Kaen University, Nongkhai 43000 (Thailand); Sivaratana, R. [Seagate Technology, 1627, Teparak, Samutprakarn 10200 (Thailand); Jutong, N. [Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Mewes, C.K.A.; Mewes, T. [Department of Physics & Astronomy, MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States)

    2015-05-01

    For spin transfer torque (STT), the switching energy and thermal stability of magnetic tunnel junctions (MTJ) bits utilized in memory devices are important factors that have to be considered simultaneously. In this article, we examined the minimum energy for STT induced magnetization switching in MTJ devices for different in-plane angles of the magnetization in the free layer and the pinned layer with respect to the major axis of the elliptical cylinder of the cell. Simulations were performed by comparing the analytical solution with macrospin and full micromagnetic calculations. The results show good agreement of the switching energy calculated by using the three approaches for different initial angles of the magnetization of the free layer. Also, the low-energy location specifies the suitable value of both time and current in order to reduce the heat effect during the switching process. - Highlights: • Switching energy model was firstly examined with tiled magnetization in STT-RAM. • Simulation was performed by analytical solution, macrospin and micromagnetic models. • Low energy results from three models show agreement for tilt angle in free layer. • We also found an optimal tilt angle of the pinned layer. • Low-energy location specifies the suitable switching location to reduce heat effect.

  2. Brief rapid thermal treatment effect on patterned CoFeB-based magnetic tunneling junctions

    Science.gov (United States)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Wang, Yung-Hung; Kao, Ming-Jer; Tsai, Ming-Jinn; Wu, Jong-Ching; Horng, Lance

    2007-05-01

    The brief thermal treatment effects on the magnetoresistance of microstructured Co60Fe20B20-based magnetic tunneling junctions have been studied. The elliptical shape of devices with long/short axis of 4/2μm was patterned out of film stack of seed layer (20)/PtMn(15)/Co60Fe20B20(3)/Al(0.7)oxide/C60Fe20B20(20)/capping layer (48) (thickness unit in nanometers) combining conventional lithography and inductively coupled plasma reactive ion beam etching technologies. The thermal annealing was carried out with device loading into a furnace with preset temperatures ranging from 100to400°C for only 5min in the absence of any external magnetic field. The magnetoresistance was found to increase with increasing annealing temperatures up to 250°C and then decrease at higher annealing temperatures. In addition, the magnetoresistance ratio of around 35%, similar to that of as-fabricated devices, sustains up to annealing temperature of 350°C. This survival of magnetoresistance at higher annealing temperature is due to boron conservation in the amorphous CoFeB ferromagnetic layer at higher annealing temperature for only a short time, which is manifested using x-ray diffractometer technique.

  3. A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation

    Directory of Open Access Journals (Sweden)

    Hyein Lim

    2016-01-01

    Full Text Available Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has evolved from the field-induced magnetic switching (FIMS technique to the spin-transfer torque (STT switching technique. Additionally, material technology that induces perpendicular magnetic anisotropy (PMA facilitates low-power operation through the reduction of the switching current density. In this paper, the modeling of magnetic tunnel junctions (MTJs is reviewed. Modeling methods and models of MTJ characteristics are classified into two groups, macromodels and behavioral models, and the most important characteristics of MTJs, the voltage-dependent MTJ resistance and the switching behavior, are compared. To represent the voltage dependency of MTJ resistance, some models are based on physical mechanisms, such as Landau-Lifshitz-Gilbert (LLG equation or voltage-dependent conductance. Some behavioral models are constructed by adding fitting parameters or introducing new physical parameters to represent the complex switching behavior of an MTJ over a wide range of input current conditions. Other models that are not based on physical mechanisms are implemented by simply fitting to experimental data.

  4. Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

    Energy Technology Data Exchange (ETDEWEB)

    Gan, Huadong, E-mail: huadong@avalanche-technology.com; Malmhall, Roger; Wang, Zihui; Yen, Bing K; Zhang, Jing; Wang, Xiaobin; Zhou, Yuchen; Hao, Xiaojie; Jung, Dongha; Satoh, Kimihiro; Huai, Yiming [Avalanche Technology, 46600 Landing Parkway, Fremont, California 94538 (United States)

    2014-11-10

    Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

  5. A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

    Directory of Open Access Journals (Sweden)

    Hyein Lim

    2013-01-01

    Full Text Available Spin-torque oscillator (STO is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

  6. High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications

    Science.gov (United States)

    Chen, Jun-Yang; Lau, Yong-Chang; Coey, J. M. D.; Li, Mo; Wang, Jian-Ping

    2017-02-01

    The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.

  7. High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications

    Science.gov (United States)

    Chen, Jun-Yang; Lau, Yong-Chang; Coey, J. M. D.; Li, Mo; Wang, Jian-Ping

    2017-01-01

    The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications. PMID:28150807

  8. Memristive behaviors in Pt/BaTiO{sub 3}/Nb:SrTiO{sub 3} ferroelectric tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Zheng [College of Physics, Qingdao University, Qingdao 266071 (China); National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093 (China); Wu, Di, E-mail: diwu@nju.edu.cn; Li, Aidong [National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093 (China)

    2014-08-04

    We demonstrate memristive behaviors in Pt/BaTiO{sub 3}/Nb:SrTiO{sub 3} metal/ferroelectric/semiconductor ferroelectric tunnel junctions, in which the semiconductor electrode can be switched between the accumulated and the depleted states by polarization reversal in the BaTiO{sub 3} barrier via the ferroelectric field effect. An extra barrier, against electron tunneling, forms in the depleted region of the Nb:SrTiO{sub 3} electrode surface, which together with the ferroelectric barrier itself modulate the tunneling resistance with the change of effective polarization. Continuous resistance modulation over four orders of magnitude is hence achieved by application of programmed voltage pulses with different polarity, amplitude, and repetition numbers, as a result of the development of the extra barrier.

  9. The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions

    Institute of Scientific and Technical Information of China (English)

    谢征微; 李伯臧; 李玉现

    2002-01-01

    Based on the free-electron approximation, we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance (TMR) and tunnelling conductance (TC) in the double magnetic tunnel junctions (DMTJs)of the structure NM/FM/Ⅰ(S)/NM/Ⅰ(S)/FM/NM, where FM, NM and Ⅰ(S) represent the ferromagnetic metal, nonmagnetic metal and insulator (semiconductor), respectively. The FM, Ⅰ(S) and inner NM layers are of finite thickness,while the thickness of the outer NM layer is infinite. The calculated results show that, due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers,the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations, and a much higher TMR can be obtained for suitable thicknesses of FM layers.

  10. Transport and noise properties of a normal metal-superconductor-normal metal junction with mixed singlet and chiral triplet pairings

    Science.gov (United States)

    Paul, Ganesh C.; Dutta, Paramita; Saha, Arijit

    2017-01-01

    We study transport and zero frequency shot noise properties of a normal metal-superconductor-normal metal (NSN) junction, with the superconductor having mixed singlet and chiral triplet pairings. We show that in the subgapped regime when the chiral triplet pairing amplitude dominates over that of the singlet, a resonance phenomena emerges out at zero energy where all the quantum mechanical scattering probabilities acquire a value of 0.25. At the resonance, crossed Andreev reflection mediating through such junction, acquires a zero energy peak. This reflects as a zero energy peak in the conductance as well depending on the doping concentration. We also investigate shot noise for this system and show that shot noise cross-correlation is negative in the subgapped regime when the triplet pairing dominates over the singlet one. The latter is in sharp contrast to the positive shot noise obtained when the singlet pairing is the dominating one.

  11. Charge transport across a mesoscopic superconductor–normal metal junction: coherence and decoherence effects

    NARCIS (Netherlands)

    Belogolovskii, M.; Golubov, A.; Grajcar, M.; Kupriyanov, M. Yu.; Seidel, P.

    2001-01-01

    We present a simple scattering approach to the charge transport across a realistic superconductor–normal injector interface of a finite transmittance that is modeled by a double-barrier mesoscopic junction. For a d-wave pairing symmetry, our calculations combine a fully quantum-mechanical scattering

  12. Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction.

    Science.gov (United States)

    Lee, Du-Yeong; Hong, Song-Hwa; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-08

    It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness (0.40~0.53 nm), and the TMR ratio for W spacers (~134%) was higher than that for Ta spacers (~98%). This dependency on the spacer material and thickness was associated with the (100) body-centered-cubic crystallinity of the MgO layers: the strain enhanced diffusion length in the MgO layers of W atoms (~1.40 nm) was much shorter than that of Ta atoms (~2.85 nm) and the shorter diffusion length led to the MgO layers having better (100) body-centered-cubic crystallinity.

  13. Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm

    Science.gov (United States)

    Narita, Yuzuru; Takahashi, Yutaka; Harada, Masahide; Oikawa, Kenichi; Kobayashi, Daisuke; Hirose, Kazuyuki; Sato, Hideo; Ikeda, Shoji; Endoh, Tetsuo; Ohno, Hideo

    2017-08-01

    This work represents the first-ever investigation of the effects of fast neutron exposure on the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions (p-MTJs) with practical junction diameters (D) between 46 and 64 nm. In this study, 461 p-MTJs, each with a tunnel magnetoresistance (TMR) ratio above 90%, were irradiated with fast neutrons at a total 1 MeV equivalent fluence of 3.79 × 1012 cm-2, corresponding to 1.90 × 1011 h irradiation with fast atmospheric neutrons (20 cm-2 h-1), without applying a bias voltage. Following irradiation, there were no changes in the properties of these devices, such as their resistance versus magnetic field curves, resistance values in the parallel and anti-parallel states, or TMR ratios, regardless of the neutron fluence. On the basis of these data, the nuclear reactions that occur under the specific experimental neutron irradiation conditions employed in this work are discussed.

  14. Inelastic Tunneling Spectroscopy of Gold-Thiol and Gold-Thiolate Interfaces in Molecular Junctions: The Role of Hydrogen

    CERN Document Server

    Demir, Firuz

    2012-01-01

    It is widely believed that when a molecule with thiol (S-H) end groups bridges a pair of gold electrodes, the S atoms bond to the gold and the thiol H atoms detach from the molecule. However, little is known regarding the details of this process, its time scale, and whether molecules with and without thiol hydrogen atoms can coexist in molecular junctions. Here we explore theoretically how inelastic tunneling spectroscopy (IETS) can shed light on these issues. We present calculations of the geometries, low bias conductances and IETS of propanedithiol and propanedithiolate molecular junctions with gold electrodes. We show that IETS can distinguish between junctions with molecules having no, one or two thiol hydrogen atoms. We find that in most cases the single-molecule junctions in the IETS experiment of Hihath et al. [Nano Lett. 8, 1673 (2008)] had no thiol H atoms, but that a molecule with a single thiol H atom may have bridged their junction occasionally. We also consider the evolution of the IETS spectrum ...

  15. Charge transport in molecular electronic junctions: compression of the molecular tunnel barrier in the strong coupling regime.

    Science.gov (United States)

    Sayed, Sayed Y; Fereiro, Jerry A; Yan, Haijun; McCreery, Richard L; Bergren, Adam Johan

    2012-07-17

    Molecular junctions are essentially modified electrodes familiar to electrochemists where the electrolyte is replaced by a conducting "contact." It is generally hypothesized that changing molecular structure will alter system energy levels leading to a change in the transport barrier. Here, we show the conductance of seven different aromatic molecules covalently bonded to carbon implies a modest range ( 2 eV range). These results are explained by considering the effect of bonding the molecule to the substrate. Upon bonding, electronic inductive effects modulate the energy levels of the system resulting in compression of the tunneling barrier. Modification of the molecule with donating or withdrawing groups modulate the molecular orbital energies and the contact energy level resulting in a leveling effect that compresses the tunneling barrier into a range much smaller than expected. Whereas the value of the tunneling barrier can be varied by using a different class of molecules (alkanes), using only aromatic structures results in a similar equilibrium value for the tunnel barrier for different structures resulting from partial charge transfer between the molecular layer and the substrate. Thus, the system does not obey the Schottky-Mott limit, and the interaction between the molecular layer and the substrate acts to influence the energy level alignment. These results indicate that the entire system must be considered to determine the impact of a variety of electronic factors that act to determine the tunnel barrier.

  16. High density processing electronics for superconducting tunnel junction x-ray detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Warburton, W.K., E-mail: bill@xia.com [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Harris, J.T. [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Friedrich, S. [Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States)

    2015-06-01

    Superconducting tunnel junctions (STJs) are excellent soft x-ray (100–2000 eV) detectors, particularly for synchrotron applications, because of their ability to obtain energy resolutions below 10 eV at count rates approaching 10 kcps. In order to achieve useful solid detection angles with these very small detectors, they are typically deployed in large arrays – currently with 100+ elements, but with 1000 elements being contemplated. In this paper we review a 5-year effort to develop compact, computer controlled low-noise processing electronics for STJ detector arrays, focusing on the major issues encountered and our solutions to them. Of particular interest are our preamplifier design, which can set the STJ operating points under computer control and achieve 2.7 eV energy resolution; our low noise power supply, which produces only 2 nV/√Hz noise at the preamplifier's critical cascode node; our digital processing card that digitizes and digitally processes 32 channels; and an STJ I–V curve scanning algorithm that computes noise as a function of offset voltage, allowing an optimum operating point to be easily selected. With 32 preamplifiers laid out on a custom 3U EuroCard, and the 32 channel digital card in a 3U PXI card format, electronics for a 128 channel array occupy only two small chassis, each the size of a National Instruments 5-slot PXI crate, and allow full array control with simple extensions of existing beam line data collection packages.

  17. Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, J. H., E-mail: juno@fris.tohoku.ac.jp [Graduate School of Engineering, Tohoku University, Sendai (Japan); Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung (Korea, Republic of); Endoh, T. [Graduate School of Engineering, Tohoku University, Sendai (Japan); Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai (Japan); Kim, Y.; Kim, W. K.; Park, S. O. [Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung (Korea, Republic of)

    2014-05-07

    To identify the degradation mechanism in magnetic tunnel junctions (MTJs) using hydrogen, the properties of the MTJs were measured by applying an additional hydrogen etch process and a hydrogen plasma process to the patterned MTJs. In these studies, an additional 50 s hydrogen etch process caused the magnetoresistance (MR) to decrease from 103% to 14.7% and the resistance (R) to increase from 6.5 kΩ to 39 kΩ. Moreover, an additional 500 s hydrogen plasma process decreased the MR from 103% to 74% and increased R from 6.5 kΩ to 13.9 kΩ. These results show that MTJs can be damaged by the hydrogen plasma process as well as by the hydrogen etch process, as the atomic bonds in MgO may break and react with the exposed hydrogen gas. Compounds such as MgO hydrate very easily. We also calculated the damaged layer width (DLW) of the patterned MTJs after the hydrogen etching and plasma processes, to evaluate the downscaling limitations of spin-transfer-torque magnetic random-access memory (STT-MRAM) devices. With these calculations, the maximum DLWs at each side of the MTJ, generated by the etching and plasma processes, were 23.8 nm and 12.8 nm, respectively. This result validates that the hydrogen-based MTJ patterning processes cannot be used exclusively in STT-MRAMs beyond 20 nm.

  18. Experimental demonstration of single electron transistors featuring SiO{sub 2} plasma-enhanced atomic layer deposition in Ni-SiO{sub 2}-Ni tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Karbasian, Golnaz, E-mail: Golnaz.Karbasian.1@nd.edu; McConnell, Michael S.; Orlov, Alexei O.; Rouvimov, Sergei; Snider, Gregory L. [Electrical Engineering Department, University of Notre Dame, Indiana 46556 (United States)

    2016-01-15

    The authors report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultrathin (≈1 nm) tunnel-transparent SiO{sub 2} in Ni-SiO{sub 2}-Ni tunnel junctions. They show that, as a result of the O{sub 2} plasma steps in PEALD of SiO{sub 2}, the top surface of the underlying Ni electrode is oxidized. Additionally, the bottom surface of the upper Ni layer is also oxidized where it is in contact with the deposited SiO{sub 2}, most likely as a result of oxygen-containing species on the surface of the SiO{sub 2}. Due to the presence of these surface parasitic layers of NiO, which exhibit features typical of thermally activated transport, the resistance of Ni-SiO{sub 2}-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with thermally activated resistors in series with tunnel junctions. The reduction of NiO to Ni is therefore required to restore the metal-insulator-metal (MIM) structure of the junctions. Rapid thermal annealing in a forming gas ambient at elevated temperatures is presented as a technique to reduce both parasitic oxide layers. This method is of great interest for devices that rely on MIM tunnel junctions with ultrathin barriers. Using this technique, the authors successfully fabricated MIM SETs with minimal trace of parasitic NiO component. They demonstrate that the properties of the tunnel barrier in nanoscale tunnel junctions (with <10{sup −15} m{sup 2} in area) can be evaluated by electrical characterization of SETs.

  19. Simulation Study on Understanding the Spin Transport in MgO Adsorbed Graphene Based Magnetic Tunnel Junction

    Science.gov (United States)

    Raturi, Ashish; Choudhary, Sudhanshu

    2016-11-01

    First principles calculations of spin-dependent electronic transport properties of magnetic tunnel junction (MTJ) consisting of MgO adsorbed graphene nanosheet sandwiched between two CrO2 half-metallic ferromagnetic (HMF) electrodes is reported. MgO adsorption on graphene opens bandgap in graphene nanosheet which makes it more suitable for use as a tunnel barrier in MTJs. It was found that MgO adsorption suppresses transmission probabilities for spin-down channel in case of parallel configuration (PC) and also suppresses transmission in antiparallel configuration (APC) for both spin-up and spin-down channel. Tunnel magneto-resistance (TMR) of 100% is obtained at all bias voltages in MgO adsorbed graphene-based MTJ which is higher than that reported in pristine graphene-based MTJ. HMF electrodes were found suitable to achieve perfect spin filtration effect and high TMR. I-V characteristics for both parallel and antiparallel magnetization states of junction are calculated. High TMR suggests its usefulness in spin valves and other spintronics-based applications.

  20. Nonlinear thermoelectric effects in high-field superconductor-ferromagnet tunnel junctions

    Directory of Open Access Journals (Sweden)

    Stefan Kolenda

    2016-11-01

    Full Text Available Background: Thermoelectric effects result from the coupling of charge and heat transport and can be used for thermometry, cooling and harvesting of thermal energy. The microscopic origin of thermoelectric effects is a broken electron–hole symmetry, which is usually quite small in metal structures. In addition, thermoelectric effects decrease towards low temperatures, which usually makes them vanishingly small in metal nanostructures in the sub-Kelvin regime.Results: We report on a combined experimental and theoretical investigation of thermoelectric effects in superconductor/ferromagnet hybrid structures. We investigate the dependence of thermoelectric currents on the thermal excitation, as well as on the presence of a dc bias voltage across the junction.Conclusion: Large thermoelectric effects are observed in superconductor/ferromagnet and superconductor/normal-metal hybrid structures. The spin-independent signals observed under finite voltage bias are shown to be reciprocal to the physics of superconductor/normal-metal microrefrigerators. The spin-dependent thermoelectric signals in the linear regime are due to the coupling of spin and heat transport, and can be used to design more efficient refrigerators.

  1. Connexin26 regulates assembly and maintenance of cochlear gap junction macromolecular complex for normal hearing

    Science.gov (United States)

    Kamiya, Kazusaku; Fukunaga, Ichiro; Hatakeyama, Kaori; Ikeda, Katsuhisa

    2015-12-01

    Hereditary deafness affects about 1 in 2000 children and GJB2 gene mutation is most frequent cause for this disease in the world. GJB2 encodes connexin26 (Cx26), a component in cochlear gap junction. Recently, we found macromolecular change of gap junction plaques with two different types of Cx26 mutation as major classification of clinical case, one is a model of dominant negative type, Cx26R75W+ and the other is conditional gene deficient mouse, Cx26f/fP0Cre as a model for insufficiency of gap junction protein [6]. Gap junction composed mainly of Cx26 and Cx30 in wild type mice formed large planar gap junction plaques (GJP). In contrast, Cx26R75W+ and Cx26f/fP0Cre showed fragmented small round GJPs around the cell border. In Cx26f/fP0Cre, some of the cells with Cx26 expression due to their cellular mosaicism showed normal large GJP with Cx26 and Cx30 only at the cell junction site between two Cx26 positive cells. These indicate that bilateral Cx26 expressions from both adjacent cells are essential for the formation of the cochlear linear GJP, and it is not compensated by other cochlear Connexins such as Connexin30. In the present study, we demonstrated a new molecular pathology in most common hereditary deafness with different types of Connexin26 mutations, and this machinery can be a new target for drag design of hereditary deafness.

  2. Magnetic properties and high room temperature TMR ratios of Co{sub 2}FeAl in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ebke, Daniel; Kugler, Zoe; Thomas, Patrick; Schebaum, Oliver; Schaefers, Markus; Nissen, Dennis; Schmalhorst, Jan; Huetten, Andreas; Thomas, Andy [Thin Films and Physics of Nanostructures, Physics Department, Bielefeld University (Germany)

    2010-07-01

    Spintronic devices have found a lot of attention in the recent years due to the possible new applications, e.g. a magnetic random access memory (MRAM). Therefore, materials with a high spin polarization such as half metallic Heusler compounds are eligible. In this work, we present low temperature tunnel magnetoresistance (TMR) values of up to 270% for MgO based magnetic tunnel junctions (MTJs) with Co{sub 2}FeAl and Co-Fe electrodes. A low temperature dependence leads to high room temperature TMR values of about 150%. The bulk magnetic moment and the element specific magnetic moment at the barrier interface were examined as a function of annealing temperature by alternating gradient magnetometer (AGM) and X-ray absorption spectroscopy (XAS)/X-ray magnetic circular dichroism (XMCD), respectively.

  3. X-ray absorption and magnetic circular dichroism studies of Co2FeAl in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ebke, D.; Kugler, Z.; Thomas, P.; Schebaum, O.; Schafers, M.; Nissen, D.; Schmalhorst, J.; Hutten, A.; Arenholz, E.; Thomas, A.

    2010-01-11

    The bulk magnetic moment and the element specific magnetic moment of Co{sub 2}FeAl thin films were examined as a function of annealing temperature by alternating gradient magnetometer (AGM) and X-ray absorption spectroscopy (XAS)/X-ray magnetic circular dichroism (XMCD), respectively. A high magnetic moment can be achieved for all annealing temperatures and the predicted bulk and interface magnetic moment of about 5 {tilde A}{sub B} are reached via heating. We will also present tunnel magnetoresistance (TMR) values of up to 153% at room temperature and 260% at 13 K for MgO based magnetic tunnel junctions (MTJs) with Co{sub 2}FeAl and Co-Fe electrodes.

  4. Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors

    Science.gov (United States)

    Nakano, T.; Oogane, M.; Furuichi, T.; Ando, Y.

    2017-01-01

    We developed CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with a perpendicularly magnetized synthetic antiferromagnetic (p-SAF) reference layer for magnetic sensor applications. The MTJs exhibited linear tunnel magnetoresistance curves to out-of-plane applied magnetic fields with dynamic ranges more than ±2.5 kOe, which are wider than those in CoFeB/MgO/CoFeB-MTJs reported to date. The performance metrics of MTJ sensors, i.e., sensitivity and nonlinearity, depend significantly on the anisotropy field of the free layer. We explained the dependences by a simple model based on the Stoner-Wohlfarth and Slonczewski models, which gives us a guideline to design the sensor performance metrics. These findings demonstrated that MTJs with a p-SAF reference layer are promising candidates for wide-dynamic-range magnetic sensors.

  5. Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Kugler, Zoe, E-mail: zkugler@physik.uni-bielefeld.d [Bielefeld University, Department of Physics, Universitaetsstr. 25, 33615 Bielefeld (Germany); Drewello, Volker; Schaefers, Markus; Schmalhorst, Jan; Reiss, Guenter; Thomas, Andy [Bielefeld University, Department of Physics, Universitaetsstr. 25, 33615 Bielefeld (Germany)

    2011-01-15

    Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.

  6. Niobium nano-SQUIDs based on sub-micron tunnel junction fabricated by three-dimensional Focused Ion Beam sculpting

    Science.gov (United States)

    Fretto, M.; Enrico, E.; De Leo, N.; Boarino, L.; Lacquaniti, V.; Granata, C.; Russo, R.; Vettoliere, A.

    2014-05-01

    A three dimensional nano-SQUID (Superconducting Quantum Interference Device) has been realized in a vertical configuration (with the loop in the same plane of Josephson Tunneling Junctions, JTJs). The loop area is 0.25 μm2 corresponding to a modulation period of about 5 mT, the square JTJs have a side length of 0.3 μm. Josephson junction's fabrication is carried out combining optical lithography to pattern trilayer and three dimensional (3D) Focused Ion Beam (FIB) sculpting technique to define the junctions' and the loop's areas. Two different ion etching processes were performed, perpendicular and parallel to the multilayer, resulting in a precise 3D structure. Finally, a standard anodization was performed to eliminate the unstructured surface material generated by the high energetic ion beam assuring high quality junctions. Electric transport characteristics of the nanodevice measured at T = 4.2 K are reported, in particular the current-voltage characteristics and critical current vs external magnetic field. The high modulation depth of the critical current (up to 70% of the Ic at zero magnetic flux) and the device reliability are very encouraging in view of nanoscience applications.

  7. Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state

    Science.gov (United States)

    Zhang, Y.; Yan, X. H.; Guo, Y. D.; Xiao, Y.

    2017-08-01

    Motivated by a recent tunneling magnetoresistance (TMR) measurement in which the negative TMR is observed in MgO/NiO-based magnetic tunnel junctions (MTJs), we have performed systematic calculations of transmission, current, and TMR of Fe/MgO/NiO/Fe MTJ with different thicknesses of NiO and MgO layers based on noncollinear density functional theory and non-equilibrium Green's function theory. The calculations show that, as the thickness of NiO and MgO layers is small, the negative TMR can be obtained which is attributed to the spin mixing effect and interface state. However, in the thick MTJ, the spin-flipping scattering becomes weaker, and thus, the MTJs recover positive TMR. Based on our theoretical results, we believe that the interface state at Fe/NiO interface and the spin mixing effect induced by noncollinear interfacial magnetization will play important role in determining transmission and current of Fe/MgO/NiO/Fe MTJ. The results reported here will be important in understanding the electron tunneling in MTJ with the barrier made by transition metal oxide.

  8. Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

    Science.gov (United States)

    Fang, Bin; Feng, Jiafeng; Gan, Huadong; Malmhall, Roger; Huai, Yiming; Xiong, Rongxin; Wei, Hongxiang; Han, Xiufeng; Zhang, Baoshun; Zeng, Zhongming

    2016-12-01

    We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

  9. Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

    Directory of Open Access Journals (Sweden)

    Bin Fang

    2016-12-01

    Full Text Available We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

  10. A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT)

    Science.gov (United States)

    Zhao, Weisheng; Duval, Julien; Klein, Jacques-Olivier; Chappert, Claude

    2011-12-01

    Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

  11. High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Gui, Y. S.; Bai, L. H.; Hu, C.-M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Xiao, Y.; Guo, H. [Department of Physics, Center for the Physics of Materials, McGill University, Montreal, Quebec H3A 2T8 (Canada); Hemour, S.; Zhao, Y. P.; Wu, K. [Ecole Polytechnique de Montreal, Montreal, Quebec H3T 1J4 (Canada); Houssameddine, D. [Everspin Technologies, 1347 N. Alma School Road, Chandler, Arizona 85224 (United States)

    2015-04-13

    In the absence of any external applied magnetic field, we have found that a magnetic tunnel junction (MTJ) can produce a significant output direct voltage under microwave radiation at frequencies, which are far from the ferromagnetic resonance condition, and this voltage signal can be increase by at least an order of magnitude by applying a direct current bias. The enhancement of the microwave detection can be explained by the nonlinear resistance/conductance of the MTJs. Our estimation suggests that optimized MTJs should achieve sensitivities for non-resonant broadband microwave detection of about 5000 mV/mW.

  12. A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT).

    Science.gov (United States)

    Zhao, Weisheng; Duval, Julien; Klein, Jacques-Olivier; Chappert, Claude

    2011-04-28

    Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

  13. Co2FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers

    Directory of Open Access Journals (Sweden)

    J. Rogge

    2015-07-01

    Full Text Available We succeed to integrate BaO as a tunneling barrier into Co2FeAl based magnetic tunnel junctions (MTJs. By means of Auger electron spectroscopy it could be proven that the applied annealing temperatures during BaO deposition and afterwards do not cause any diffusion of Ba neither into the lower Heusler compound lead nor into the upper Fe counter electrode. Nevertheless, a negative tunnel magnetoresistance (TMR ratio of -10% is found for Co2FeAl (24 nm / BaO (5 nm / Fe (7 nm MTJs, which can be attributed to the preparation procedure and can be explained by the formation of Co- and Fe-oxides at the interfaces between the Heusler and the crystalline BaO barrier by comparing with theory. Although an amorphous structure of the BaO barrier seems to be confirmed by high-resolution transmission electron microscopy (TEM, it cannot entirely be ruled out that this is an artifact of TEM sample preparation due to the sensitivity of BaO to moisture. By replacing the BaO tunneling barrier with an MgO/BaO double layer barrier, the electric stability could effectively be increased by a factor of five. The resulting TMR effect is found to be about +20% at room temperature, although a fully antiparallel state has not been realized.

  14. Epitaxial wurtzite-MgZnO barrier based magnetic tunnel junctions deposited on a metallic ferromagnetic electrode

    Energy Technology Data Exchange (ETDEWEB)

    Belmoubarik, M., E-mail: bmm-dhr@ecei.tohoku.ac.jp; Al-Mahdawi, M.; Sato, H.; Nozaki, T.; Sahashi, M. [Department of Electronic Engineering, Tohoku University, Sendai 890-8579 (Japan)

    2015-06-22

    An epitaxial wurtzite (WZ) Mg{sub 0.23}Zn{sub 0.77}O barrier based magnetic tunnel junction (MTJ), with electrode-barrier structure of Co{sub 0.30}Pt{sub 0.70} (111)/Mg{sub 0.23}Zn{sub 0.77}O (0001)/Co (0001), was fabricated. The good crystallinity and tunneling properties were experimentally confirmed. Electrical and magnetic investigations demonstrated its high resistance-area product of 1.05 MΩ μm{sup 2}, a maximum tunneling magneto-resistance (TMR) of 35.5%, and the existence of localized states within the tunneling barrier producing TMR rapid decrease and oscillation when increasing the applied bias voltage. The TMR value almost vanished at 200 K, which was attributed to the induced moment and strong spin-orbit coupling in Pt atoms at the Co{sub 0.30}Pt{sub 0.70}/Mg{sub 0.23}Zn{sub 0.77}O interface. Owing to the ferroelectric behavior in WZ-MgZnO materials, the fabrication of WZ-MgZnO barrier based MTJs deposited on a metallic ferromagnetic electrode will open routes for electrically controllable non-volatile devices that are compatible with CMOS technology.

  15. Bias dependence of spin transfer torque in Co2MnSi Heusler alloy based magnetic tunnel junctions

    Science.gov (United States)

    Zhang, Jie; Phung, Timothy; Pushp, Aakash; Ferrante, Yari; Jeong, Jaewoo; Rettner, Charles; Hughes, Brian P.; Yang, See-Hun; Jiang, Yong; Parkin, Stuart S. P.

    2017-04-01

    Heusler compounds are of interest as electrode materials for use in magnetic tunnel junctions (MTJs) due to their half metallic character, which leads to 100% spin polarization and high tunneling magnetoresistance. Most work to date has focused on the improvements to tunneling magnetoresistance that can stem from the use of Heusler electrodes, while there is much less work investigating the influence of Heusler electrodes on the spin transfer torque properties of MTJs. Here, we investigate the bias dependence of the anti-damping like and field-like spin transfer torque components in both symmetric (Co2MnSi/MgO/Co2MnSi) and asymmetric (Co2MnSi/MgO/CoFe) structure Heusler based MTJs using spin transfer torque ferromagnetic resonance. We find that while the damping like torque is linear with respect to bias for both MTJ structures, the asymmetric MTJ structure has an additional linear component to the ordinarily quadratic field like torque bias dependence and that these results can be accounted for by a free electron tunneling model. Furthermore, our results suggest that the low damping and low saturation magnetization properties of Heusler alloys are more likely to lead significant improvements to spin torque switching efficiency rather than their half metallic character.

  16. Influence of exchange bias on magnetic losses in CoFeB/MgO/CoFeB tunnel junctions

    Science.gov (United States)

    Stearrett, Ryan; Wang, W. G.; Kou, Xiaoming; Feng, J. F.; Coey, J. M. D.; Xiao, J. Q.; Nowak, E. R.

    2012-07-01

    The strength of the exchange bias field is found to influence the low-frequency magnetoresistive noise associated with the magnetic reference layer in sputtered-deposited and electron-beam-evaporated CoFeB/MgO/CoFeB tunnel junctions. The noise is due to magnetic losses arising in the reference layer. The losses are parameterized by a phase lag ɛ which exhibits a nontrivial dependence on the externally applied field. The general trend found among all devices is that the losses are largest in the antiparallel state. The effect of exchange bias on the reference layer's noise is investigated at a field corresponding to maximum resistance susceptibility, Href. Higher values for the phase lag at Href, ɛref, are found in devices having a large exchange bias field. We also observed that Href and ɛref are larger in devices having thicker seed layers. This characteristic is also evident in double-barrier magnetic tunnel junctions. Prolonged thermal annealing is found to decrease ɛref, reduce Href, and alter the field profile of the resistance susceptibility of the reference layer to resemble that of a more magnetically soft behavior. In addition to its impact on the magnetoresistive noise, the incorporation of exchange bias layers into the materials stack also affects the tunneling magnetoresistance ratio with higher values found at smaller exchange bias fields. We attribute the magnitude of the magnetic losses, and hence the magnetoresistive noise, from the reference layer to disorder in its magnetic microstructure. Our results indicate that the nature and degree of disorder are correlated to the strength of the exchange bias coupling. The origin of this correlation may be due to a competition between different microstructures among various layers, one that leads to coherent tunneling (large tunneling magnetoresistance) in MgO-based tunneling devices and the other which promotes strong exchange bias coupling. A decrease in the exchange bias either through degradation

  17. Microwave resonant activation in hybrid single-gap/two-gap Josephson tunnel junctions

    Science.gov (United States)

    Carabello, Steven; Lambert, Joseph G.; Mlack, Jerome; Dai, Wenqing; Li, Qi; Chen, Ke; Cunnane, Daniel; Xi, X. X.; Ramos, Roberto C.

    2016-09-01

    Microwave resonant activation is a powerful, straightforward technique to study classical and quantum systems, experimentally realized in Josephson junction devices cooled to very low temperatures. These devices typically consist of two single-gap superconductors separated by a weak link. We report the results of the first resonant activation experiments on hybrid thin film Josephson junctions consisting of a multi-gap superconductor (MgB2) and a single-gap superconductor (Pb or Sn). We can interpret the plasma frequency in terms of theories both for conventional and hybrid junctions. Using these models, we determine the junction parameters including critical current, resistance, and capacitance and find moderately high quality factors of Q0˜ 100 for these junctions.

  18. Anisotropic transport of normal metal-barrier-normal metal junctions in monolayer phosphorene

    Science.gov (United States)

    De Sarkar, Sangita; Agarwal, Amit; Sengupta, K.

    2017-07-01

    We study transport properties of a phosphorene monolayer in the presence of single and multiple potential barriers of height U 0 and width d, using both continuum and microscopic lattice models, and show that the nature of electron transport along its armchair edge (x direction) is qualitatively different from its counterpart in both conventional two-dimensional electron gas with Schrödinger-like quasiparticles and graphene or surfaces of topological insulators hosting massless Dirac quasiparticles. We show that the transport, mediated by massive Dirac electrons, allows one to achieve collimated quasiparticle motion along x and thus makes monolayer phosphorene an ideal experimental platform for studying Klein paradox in the context of gapped Dirac materials. We study the dependence of the tunneling conductance G\\equiv {{G}xx} as a function of d and U 0, and demonstrate that for a given applied voltage V its behavior changes from oscillatory to decaying function of d for a range of U 0 with finite non-zero upper and lower bounds, and provide analytical expression for these bounds within which G decays with d. We contrast such behavior of G with that of massless Dirac electrons in graphene and also with that along the zigzag edge (y direction) in phosphorene where the quasiparticles obey an effective Schrödinger equation at low energy. We also study transport through multiple barriers along x and demonstrate that these properties hold for transport through multiple barriers as well. Finally, we suggest concrete experiments which may verify our theoretical predictions.

  19. Inelastic tunneling spectroscopy of gold-thiol and gold-thiolate interfaces in molecular junctions: the role of hydrogen.

    Science.gov (United States)

    Demir, Firuz; Kirczenow, George

    2012-09-07

    It is widely believed that when a molecule with thiol (S-H) end groups bridges a pair of gold electrodes, the S atoms bond to the gold and the thiol H atoms detach from the molecule. However, little is known regarding the details of this process, its time scale, and whether molecules with and without thiol hydrogen atoms can coexist in molecular junctions. Here, we explore theoretically how inelastic tunneling spectroscopy (IETS) can shed light on these issues. We present calculations of the geometries, low bias conductances, and IETS of propanedithiol and propanedithiolate molecular junctions with gold electrodes. We show that IETS can distinguish between junctions with molecules having no, one, or two thiol hydrogen atoms. We find that in most cases, the single-molecule junctions in the IETS experiment of Hihath et al. [Nano Lett. 8, 1673 (2008)] had no thiol H atoms, but that a molecule with a single thiol H atom may have bridged their junction occasionally. We also consider the evolution of the IETS spectrum as a gold STM tip approaches the intact S-H group at the end of a molecule bound at its other end to a second electrode. We predict the frequency of a vibrational mode of the thiol H atom to increase by a factor ~2 as the gap between the tip and molecule narrows. Therefore, IETS should be able to track the approach of the tip towards the thiol group of the molecule and detect the detachment of the thiol H atom from the molecule when it occurs.

  20. Transport Properties of the Tunnel Junctions Al1-xCox/{Al1-xCox-oxide}/Al

    Institute of Scientific and Technical Information of China (English)

    X.F.Han; J. Murai; H.Kubota; Y.Ando; Q.Y.Wang; N.Tezuka; T.Miyazaki

    2000-01-01

    The oxides of Al1-xCox (x=0,0.25,0.5,0.75, and 1.0) alloys were chosen as barrier materials in this work. The tunnel junction consists of the bottom electrode Al1-xCox and the top electrode Al with an insulating layer { Al1-xCox-oxide} which was formed by natural oxidation in a baking-box at 333K. The oxidation time for forming an Al1-xCox-oxide layer on the surface of the bottom Al1-xCox layers were optimized.The resistance of Al1-xCox/{ Al1-xCox-oxide}/Al tunnel junctions varied between 101 and 106 Ω measured at 1 my and 4.2 K. The effective barrier height and width of insulating layers Al1-xCox-oxide ( x=0.25, 0.5, and 0.75 )varied between 0.6 and 2.7 eV and between 1.3 and 2.1 nm. It is shown that the thin oxide layer of Al1-xCox alloys can be chosen as barrier materials.

  1. Spin transfer torque in non-collinear magnetic tunnel junctions exhibiting quasiparticle bands: a non-equilibrium Green's function study

    Science.gov (United States)

    Jaya, Selvaraj Mathi

    2017-06-01

    A non-equilibrium Green's function formulation to study the spin transfer torque (STT) in non-collinear magnetic tunnel junctions (MTJs) exhibiting quasiparticle bands is developed. The formulation can be used to study the magnetoresistance and spin current too. The formulation is used to study the STT in model tunnel junctions exhibiting multiple layers and quasiparticle bands. The many body interaction that gives rise to quasiparticle bands is assumed to be a s - f exchange interaction at the electrode regions of the MTJ. The quasiparticle bands are obtained using a many body procedure and the single particle band structure is obtained using the tight binding model. The bias dependence of the STT as well as the influence of band occupancy and s - f exchange coupling strength on the STT are studied. We find from our studies that the band occupancy plays a significant role in deciding the STT and the s - f interaction strength too influences the STT significantly. Anomalous behavior in both the parallel and perpendicular components of the STT is obtained from our studies. Our results obtained for certain values of the band occupation are found to show the trend observed from the experimental measurements of STT.

  2. Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2013-08-19

    The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

  3. Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film

    Science.gov (United States)

    Sugihara, Atsushi; Suzuki, Kazuya; Miyazaki, Terunobu; Mizukami, Shigemi

    2015-07-01

    We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

  4. Low temperature tunneling magnetoresistance on (La,Sr)MnO3/Co junctions with organic spacer layers

    Science.gov (United States)

    Vinzelberg, H.; Schumann, J.; Elefant, D.; Gangineni, R. B.; Thomas, J.; Büchner, B.

    2008-05-01

    This paper concerns with giant magnetoresistance (MR) effects in organic spin valves, which are realized as layered (La,Sr)MnO3 (LSMO)-based junctions with tris-(8, hydroxyquinoline) aluminum (Alq3)-spacer and ferromagnetic top layers. The experimental work was focused on the understanding of the transport behavior in this type of magnetic switching elements. The device preparation was carried out in an ultrahigh vacuum chamber equipped with a mask changer by evaporation and sputtering on SrTiO3 substrates with LSMO stripes deposited by pulsed laser technique. The field and temperature dependences of the MR of the prepared elements are studied. Spin-valve effects at 4.2K have been observed in a broad resistance interval from 50Ω to MΩ range, however, without systematic dependence on spacer layer thickness and device area. In some samples, the MR changes sign as a function of the bias voltage. The observed similarity in the bias voltages dependences of the MR in comparison with conventional magnetic tunnel junctions with oxide barriers suggests a description of the found effects within the classical tunneling concept. This assumption is also confirmed by a similar switching behavior observed on ferromagnetically contacted carbon nanotube devices. The proposed model implies the realization of the transport via local Co chains embedded in the Alq3 layer and spin dependent tunneling over barriers at the interface Co grains/Alq3/LSMO. The existence of conducting Co chains within the organics is supported by transmission electron microscopic/electron energy loss spectroscopic studies on cross-sectional samples from analogous layer stacks.

  5. Graphene-SnO2 nanocomposites decorated with quantum tunneling junctions: preparation strategies, microstructures and formation mechanism.

    Science.gov (United States)

    Wang, Qingxiu; Wu, Xianzheng; Wang, Lijun; Chen, Zhiwen; Wang, Shilong

    2014-09-28

    Tin dioxide (SnO2) and graphene are versatile materials that are vitally important for creating new functional and smart materials. A facile, simple and efficient ultrasonic-assisted hydrothermal synthesis approach has been developed to prepare graphene-SnO2 nanocomposites (GSNCs), including three samples with graphene/Sn weight ratios = 1 : 2 (GSNC-2), 1 : 1 (GSNC-1), and graphene oxide/Sn weight ratio = 1 : 1 (GOSNC-1). Low-magnification electron microscopy analysis indicated that graphene was exfoliated and adorned with SnO2 nanoparticles, which were dispersed uniformly on both the sides of the graphene nanosheets. High-magnification electron microscopy analysis confirmed that the graphene-SnO2 nanocomposites presented network tunneling frameworks, which were decorated with the SnO2 quantum tunneling junctions. The size distribution of SnO2 nanoparticles was estimated to range from 3 to 5.5 nm. Comparing GSNC-2, GSNC-1, and GOSNC-1, GOSNC-1 was found to exhibit a significantly better the homogeneous distribution and a considerably smaller size distribution of SnO2 nanoparticles, which indicated that it was better to use graphene oxide as a supporting material and SnCl4·5H2O as a precursor to synthesize hybrid graphene-SnO2 nanocomposites. Experimental results suggest that the graphene-SnO2 nanocomposites with interesting SnO2 quantum tunneling junctions may be a promising material to facilitate the improvement of the future design of micro/nanodevices.

  6. Thermoelectric effects of the single-spin state in the ferromagnetic-normal junction with artificial magnetic impurities

    Science.gov (United States)

    Xu, Li; Li, Zhi-Jian; Hou, Hai-Yan; Niu, Pengbin; Nie, Yi-Hang

    2016-10-01

    We theoretically analyze the thermoelectric properties of the single-spin state based on the resonant tunneling of electron in the ferromagnetic-normal junction with artificial magnetic impurities. The thermoelectric coefficients, such as electrical conductance G, thermal conductance K, thermopower S and effective figure of merit Y, have been calculated using the nonequilibrium Green function in the linear regime. It is found that the thermoelectric coefficients can achieve considerable values by adjusting key parameters of the hybrid mesoscopic structure, such as the level detuning, the interdot hopping coefficient, the external magnetic field and the angle θ. When the level detuning changes, the spectra of electrical conductance and thermal conductance exhibit the electronic Dicke-like effect in the low temperature. Two valleys of electrical conductance and thermal conductance are always located at the single-spin level of QD2 ({{\\varepsilon}2\\uparrow} and ~{{\\varepsilon}2\\downarrow} ), and can achieve the antiresonant point by adjusting the interdot hopping coefficient. Thermoelectric coefficients can achieve considerable values near valleys because the Wiedemann-Franz law is strongly violated. Thermopower S and effective figure of merit Y can get larger values in the vicinity of {{\\varepsilon}2\\uparrow} by adjusting key parameters of the hybrid mesoscopic structure, such as the level detuning, the interdot hopping coefficient and the polarization. But the thermoelectric effect is reversed by changing the angle θ. When the angle θ increases, S and Y are suppressed in the vicinity of {{\\varepsilon}2\\uparrow}, meanwhile, S and Y are enhanced in the vicinity of {{\\varepsilon}2\\downarrow}. {χ+}=\\cos \\fracθ{2}|\\uparrow >+\\sin \\fracθ{2}|\\downarrow > shows that an electron in the state {χ+} can virtually tunnel into the spin-up (or spin-down) state of the ferromagnet. The amplitude of electron tunneling is \\cos \\fracθ{2} (or \\sin \\fracθ{2

  7. Postoperative normalization of left ventricular noncompaction and new echocardiographic signs in aorta to left ventricular tunnel.

    Science.gov (United States)

    Malakan Rad, Elaheh; Zeinaloo, Ali Akbar

    2013-04-01

    We report postoperative normalization of left ventricular noncompaction in a neonate undergoing successful neonatal surgery for type II aorta to left ventricular tunnel (ALVT) associated with a large patent ductus arteriosus, floppy and extremely redundant anterior mitral leaflet, right coronary artery arising directly from the tunnel, and severe left ventricular noncompaction. We also described 2 novel echocardiographic findings in ALVT including "triple wavy line sign" on M-mode echocardiography which disappeared 1 month after operation and "abnormally increased left ventricular posterior wall motion" on M-mode of standard parasternal long-axis view on color tissue Doppler imaging (TDI) that also normalized postoperatively. We showed that proper definition of endocardial border is extremely important in strain and strain rate imaging in the context of left ventricular noncompaction. Preoperative longitudinal strain and strain rate were significantly decreased in comparison to radial strain and strain rate. Circumferential strain and strain rate were normal. © 2013, Wiley Periodicals, Inc.

  8. Niobium tunnel junction fabrication using e-gun evaporation and SNAP

    Science.gov (United States)

    Kortlandt, J.; van der Zant, H. S. J.; Schellingerhout, A. J. G.; Mooij, J. E.

    1990-11-01

    We have fabricated high quality small area Nb-Al-Al 2O 3-Nb junctions with SNAP, making use of e-beam evaporation in a 10 -5 Pa diffusion pumped vacuum system. Nominal dimensions of the junctions are 8x8, 4x4 and 2x2 μm 2. We obtain typical current densities of 5-6 × 10 +2A/cm 2 and (critical current) x (subgap resistance) products of 40 mV.

  9. Direct Observation of Tunnelling through 100-nm-Wide All Metal Magnetic Junction into Si

    Institute of Scientific and Technical Information of China (English)

    Nam n. KIM; WANG Ke-Qiang; ZHANG Yu; WANG Jian-Qing

    2008-01-01

    @@ Nanoscaled spin-dependent tunnelling lines were patterned on doped Si and studied for tunnelling from the SDT ferromagnetic layer through an insulating barrier into Si. The injection contacts have the form of long strips with width and separation, ranging from 100 nm to 2 μm, and are patterned using e-beam lithography. The measured Ⅰ-Ⅴ characteristics versus temperature (80 to 300 K) on the 100 nm scaled devices between the layered-magnetic metals and the semiconductor clearly showed ballistic tunnelling, with weak dependence on the temperature.This is qualitatively different, at elevated temperatures, from 2-μm-wide scaled-up spin-dependent tunnelling structures, where thermal-ionic emission was observed to dominate carrier transport.

  10. Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

    Energy Technology Data Exchange (ETDEWEB)

    Ohsawa, T. [Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8579 (Japan); Ikeda, S.; Hanyu, T.; Ohno, H. [Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8579 (Japan); Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-8579 (Japan); Endoh, T., E-mail: tetsuo.endoh@cies.tohoku.ac.jp [Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8579 (Japan); Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-8579 (Japan); Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)

    2014-05-07

    The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90 nm technology node. Three differential pair type spin-transfer-torque-magnetic random access memory cells (4T2MTJ, 6T2MTJ, and 8T2MTJ) are compared for their successful data load at power-on. It is found that the 4T2MTJ cell has the largest pass area in the shmoo plot in TMR ratio (tunnel magnetoresistance ratio) and V{sub dd} in which a whole 256 kb cell array can be powered-on successfully. The minimum TMR ratio for the 4T2MTJ in 0.9 V < V{sub dd} < 1.9 V is 140%, while the 6T2MTJ and the 8T2MTJ cells require TMR ratio larger than 170%.

  11. Quantum Tunneling Model of a P-N Junction in Silvaco

    Science.gov (United States)

    2008-09-01

    September 1-5, 2008. [14] M. Shur, Physics of Semiconductor Devices, Prentice–Hall, Inc, 1990. [15] R. P. Feynman , The Feynman Lectures on Physics , Volume... physically based 2-D model was created in Silvaco Inc.’s ATLAS© software to model the quantum tunneling effect that is realized within a multi...photovoltaic cell. A physically based 2-D model was created in Silvaco Inc.’s software to model the quantum tunneling effect that is realized within a

  12. The manufacture and testing of magnetic tunnel junctions and a study of their switching characteristics Cobalt; Aluminium oxide; Permalloy; Sputtering; Thin films

    CERN Document Server

    Hughes, N D

    2002-01-01

    This thesis investigates the manufacture and switching characteristics of a series of cobalt/aluminium oxide/permalloy magnetic tunnel junctions. It describes the assembly and commissioning of the sputtering, magnetometry and electron transport measurement equipment required to manufacture and test the junctions. The junctions are made by sputtering thin films of the ferromagnetic materials and an ultra thin film of aluminium, which is oxidised by means of a DC glow discharge. The optimum oxidation conditions for the barrier are investigated and its characteristics determined by current-voltage modelling. The barrier thickness identified by the modelling is compared with that found by x-ray reflectometry. A simple single domain model is shown to give a reasonable fit to hysteresis and magneto-resistive data from the junctions and to provide a means to quantify the interlayer coupling. A comparative study of the magneto-resistive characteristics of junctions with ferromagnetic layers of 10nm and 100nm finds th...

  13. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure

    Science.gov (United States)

    Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2016-09-01

    For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

  14. Numerical Optimization of Tunnel-recombination Junction and Optical Absorption Properties of a-Si:H/a-SiGe:H Double-junction Solar Cell

    Institute of Scientific and Technical Information of China (English)

    KE; Shaoying; WANG; Chong; PAN; Tao; WANG; Zhaoqing; YANG; Jie; YANG; Yu

    2015-01-01

    The tunnel-recombination junction(TRJ) and optical absorption properties of a-Si:H/a-Si Ge:H double-junction solar cell were calculated by means of one dimensional simulator named AMPS-1D at the radiation of AM1.5G with a power density of 100 m W/cm2. Since the TRJ is the core component of the tandem solar cell, the optical absorption of the sub-cells and the electronic transport properties at the interface of the sub-cells are affected by the thickness and doping concentration of the TRJ. As a result, the TRJ parameters were optimized. The numerical results indicate that the maximum conversion efficiency(Eff) of 9.862% can be obtained when the thickness and doping concentration of the TRJ are 10 nm and 5*1019 cm–3, respectively. Based on the analysis of the contour map of short circuit current density, the optimal current matching can be achieved for 130 nm-thick top i-layer and 250 nm-thick bottom i-layer. In addition, four kinds of TRJ structures were also simulated for the comparison purpose. According to the calculated resistivity and band structures of the four TRJs, the efficiency of the solar cell with n-type μc-Si:H layer and p-type a-Si:H layer in TRJ structure is greater than that with other TRJ structures. It is assumed that the effect of the band offset that results in the formation of triangular barrier and backscattering behavior at the edge of the TRJ could be responsible to this phenomenon.

  15. Numerical Optimization of Tunnel-recombination Junction and Optical Absorption Properties of a-Si:H/a-SiGe:H Double-junction Solar Cell

    Institute of Scientific and Technical Information of China (English)

    KE Shaoying; WANG Chong; PAN Tao; WANG Zhaoqing; YANG Jie; YANG Yu

    2015-01-01

    The tunnel-recombination junction (TRJ) and optical absorption properties of a-Si:H/a-SiGe:H dou-ble-junction solar cell were calculated by means of one dimensional simulator named AMPS-1D at the radiation of AM1.5G with a power density of 100 mW/cm2. Since the TRJ is the core component of the tandem solar cell, the optical absorption of the sub-cells and the electronic transport properties at the interface of the sub-cells are affected by the thickness and doping concentration of the TRJ. As a result, the TRJ parameters were optimized. The numerical results indicate that the maximum conversion efficiency (Ef) of 9.862% can be obtained when the thickness and doping con-centration of the TRJ are 10 nm and 5´1019 cm–3, respectively. Based on the analysis of the contour map of short circuit current density, the optimal current matching can be achieved for 130 nm-thick topi-layer and 250 nm-thick bottom i-layer. In addition, four kinds of TRJ structures were also simulated for the comparison purpose. According to the cal-culated resistivity and band structures of the four TRJs, the efficiency of the solar cell withn-typeμc-Si:H layer and p-type a-Si:H layer in TRJ structure is greater than that with other TRJ structures. It is assumed that the effect of the band offset that results in the formation of triangular barrier and backscattering behavior at the edge of the TRJ could be responsible to this phenomenon.

  16. Long and narrow Josephson tunnel junctions of mixed overlap and inline character

    DEFF Research Database (Denmark)

    Olsen, O.H.; Samuelsen, Mogens Rugholm

    1983-01-01

    A model describing long Josephson junctions of mixed overlap and inline geometry is presented. The shape of the first zero field step is calculated for this model using a perturbation approach. The question of influence of external magnetic field on the maximum supercurrent is investigated for ov...... for overlap, inline, and mixed overlap-inline geometries. A linear dependence is found for the inline model and for mixed overlap-inline junctions in agreement with experiments. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  17. Interfacial spin-filter assisted spin transfer torque effect in Co/BeO/Co magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Y.-H., E-mail: yhtang@cc.ncu.edu.tw; Chu, F.-C. [Department of Physics, National Central University, Jung-Li 32001, Taiwan (China)

    2015-03-07

    The first-principles calculation is employed to demonstrate the spin-selective transport properties and the non-collinear spin-transfer torque (STT) effect in the newly proposed Co/BeO/Co magnetic tunnel junction. The subtle spin-polarized charge transfer solely at O/Co interface gives rise to the interfacial spin-filter (ISF) effect, which can be simulated within the tight binding model to verify the general expression of STT. This allows us to predict the asymmetric bias behavior of non-collinear STT directly via the interplay between the first-principles calculated spin current densities in collinear magnetic configurations. We believe that the ISF effect, introduced by the combination between wurtzite-BeO barrier and the fcc-Co electrode, may open a new and promising route in semiconductor-based spintronics applications.

  18. Simulation of electric-field and spin-transfer-torque induced magnetization switching in perpendicular magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiangli; Zhang, Zongzhi, E-mail: zzzhang@fudan.edu.cn [Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Engineering Center, Fudan University, Shanghai 200433 (China); Liu, Yaowen [School of Physical Science and Engineering, Tongji University, Shanghai 200092 (China); Jin, Q. Y. [State Key Laboratory of Precision Spectroscopy and Department of Physics, East China Normal University, Shanghai 200062 (China)

    2015-05-07

    Macrospin simulations are performed to model the magnetization switching driven by the combined action of electric-field and spin-polarized electric current (spin-transfer torque; STT) in MgO/CoFeB based magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy. The results indicate that at low current case, the free layer magnetization shows a fast toggle-like switching, the final parallel or antiparallel magnetization state is determined by the electric-field effect, and the STT just helps or resists it to reach the final state depending on the current direction. However, with the increase of current strength, the contribution of STT effect gradually increases, which eventually achieves a deterministic magnetization switching state. Simulations further demonstrate that by appropriately tuning the parameters of applied electric-field and current the power consumption can be easily reduced by two orders of magnitude.

  19. Origin of the broad three-terminal Hanle signals in Fe/SiO{sub 2}/Si tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Shoichi; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakane, Ryosho [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Institute for Innovation in International Engineering Education, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-07-20

    Lorentzian-shaped broader three-terminal Hanle (B-3TH) signals are observed in Fe/SiO{sub 2}/Si tunnel junction devices at 6–300 K. We propose a spin conducting model, which explains all the characteristics of our experimental results, such as field angle dependence and bias dependence of the B-3TH signals, as well as experimental results reported by other groups. It was found that the shape of the B-3TH signals is determined by the spin depolarization at the Fe/SiO{sub 2} interface caused by local magnetic fields, unlike the conventional understanding. The shape of the B-3TH signals, including narrower and inverted Hanle signals, reflects the magnetic order of an ultrathin paramagnetic layer formed at the Fe/SiO{sub 2} interface. Our model provides a unified explanation of the B-3TH signals observed in three-terminal Hanle measurements.

  20. Investigation of magnetic sensor properties of magnetic tunnel junctions with superparamagnetic free layer at low frequencies for biomedical imaging applications

    Science.gov (United States)

    Ishikawa, Kyohei; Oogane, Mikihiko; Fujiwara, Kousuke; Jono, Junichi; Tsuchida, Masaaki; Ando, Yasuo

    2016-12-01

    The magnetic sensor properties of magnetic tunnel junctions (MTJs) with a superparamagnetic (SP) free layer were systematically investigated at low frequencies (<10 Hz). We prepared four varieties of MTJs with various SP properties by changing the annealing temperature. The temperature dependence of magnetoresistance curves and the signal/noise property at 285 K were evaluated. We found that the SP free layer has the advantage of detecting very small and low-frequency AC magnetic fields compared with a ferromagnetic free layer. The SP free layer strongly suppressed magnetic 1/f noise at low frequencies and expressed a very linear response to a small magnetic field. The obtained properties in MTJs with the SP free layer are suitable for detecting biomagnetic fields. The detectivity was 111 nT at low frequencies (from 0.1 to 10 Hz), which is one of the highest values in single-MTJ sensors.